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Sample records for nm reactions zaselenie

  1. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    SciTech Connect

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters {beta}(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their {beta}(t) distributions are insensitive to the photon energy. Dissociation to H{sub 2}CO+C{sub 2}H{sub 4} is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H{sub 2}CO+C{sub 2}H{sub 4}. The observation of H{sub 2} and H atoms, {approx}1% in branching, indicates that products H{sub 2}CO and C{sub 2}H{sub 4} spontaneously decompose to only a small extent. Most HCO, C{sub 2}H{sub 3}, and C{sub 2}H{sub 2} ions originate from dissociative photoionization of products H{sub 2}CO and C{sub 2}H{sub 4}. Except atomic H and H{sub 2}, the photoproducts have large angular anisotropies, {beta}{>=}-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  2. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction.

    PubMed

    Lee, Shih-Huang

    2009-12-14

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters beta(t) as a function of flight time of products at m/z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their beta(t) distributions are insensitive to the photon energy. Dissociation to H(2)CO+C(2)H(4) is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H(2)CO+C(2)H(4). The observation of H(2) and H atoms, approximately 1% in branching, indicates that products H(2)CO and C(2)H(4) spontaneously decompose to only a small extent. Most HCO, C(2)H(3), and C(2)H(2) ions originate from dissociative photoionization of products H(2)CO and C(2)H(4). Except atomic H and H(2), the photoproducts have large angular anisotropies, beta>or=-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  3. The photodissociation of oxetane at 193 nm as the reverse of the Paterno-Buchi reaction

    NASA Astrophysics Data System (ADS)

    Lee, Shih-Huang

    2009-12-01

    We investigated the photodissociation of oxetane (1,3-trimethylene oxide) at 193.3 nm in a molecular-beam apparatus using photofragment-translational spectroscopy and selective photoionization. We measured time-of-flight (TOF) spectra and angular anisotropy parameters β(t) as a function of flight time of products at m /z=26-30 u utilizing photoionization energies from 9.8 to 14.8 eV. The TOF distributions of the products alter greatly with the employed photon energy, whereas their β(t) distributions are insensitive to the photon energy. Dissociation to H2CO+C2H4 is the major channel in the title reaction. Three distinct dissociation paths with branching ratios 0.923:0.058:0.019 are responsible for the three features observed in the distribution of kinetic energy released in the channel H2CO+C2H4. The observation of H2 and H atoms, ˜1% in branching, indicates that products H2CO and C2H4 spontaneously decompose to only a small extent. Most HCO, C2H3, and C2H2 ions originate from dissociative photoionization of products H2CO and C2H4. Except atomic H and H2, the photoproducts have large angular anisotropies, β ≥-0.8, which reflects rapid dissociation of oxetane following optical excitation at 193.3 nm. The mechanisms of dissociation of oxetane are addressed. Our results confirm the quantum-chemical calculations of Palmer et al. and provide profound insight into the Paterno-Buchi reaction.

  4. Mathematical model of reaction rate oscillations on a chain of nm-sized catalyst particles

    NASA Astrophysics Data System (ADS)

    Peskov, N. V.; Slinko, M. M.; Jaeger, N. I.

    2003-05-01

    The model of reaction rate oscillations over the surface of nanoparticles embedded into zeolite matrix is numerically investigated. The reaction rate oscillations on each particle are described by a lumped model. The reactions on separate particles interact via the gas diffusion through the pores, which is modeled in the frame of the Maxwell-Stefan approach. The reaction reveals a complex dynamical behavior if a nonhomogeneous distribution of reagent concentrations exists along the chain of particles with a sufficiently large gradient near the ends of the chain.

  5. Novel reactions of quadricyclane: a new route to monomers for low-absorbing polymers in 157-nm photoresists

    NASA Astrophysics Data System (ADS)

    Marsella, John A.; Abdourazak, Atteye H.; Carr, Richard V. C.; Markley, Thomas J.; Robertson, Eric A., III

    2004-05-01

    Norbornene monomers with fluorinated substituents are often used in copolymers targeted for photoresist applications at 157 nm. Homopolymers of these norbornene monomers typically exhibit an absorption coefficient greater than 1.5 μm-1. Comonomers, which are often perfluoroolefins, are needed to meet the transparency requirement for 157 nm lithography, namely an absorption coefficient less than 1.0 μm-1. Clearly, a norbornene monomer that gives a homopolymer with an optical density less than 1.0 μm-1 would require less, if any, perfluoroolefin comonomer, providing a distinct advantage in the production of the base resin. Research in Air Products and Chemicals" labs has led to the discovery that fluorinated hydroxyalkyl ether derivatives of norbornene ring systems with suitable substitution patterns can give homopolymers with absorption coefficients of less than 1 μm-1. The monomers are produced via a novel reaction pathway involving quadricyclane. This pathway provides a versatile and rich synthetic chemistry, and the potential for eliminating, or at least substantially decreasing, perfluoroolefin incorporation into 157 nm photoresists. Specific examples of these reactions are discussed here, along with VUV-VASE and etch resistance data for a series of polymers derived from quadricyclane reactions.

  6. Collision-induced desorption in 193-nm photoinduced reactions in (O{sub 2}+CO) adlayers on Pt(112)

    SciTech Connect

    Han Song; Ma Yunsheng; Matsushima, Tatsuo

    2005-09-01

    The spatial distribution of desorbing O{sub 2} and CO{sub 2} was examined in 193-nm photoinduced reactions in O{sub 2}+CO adlayers on stepped Pt (112)=[(s)3(111)x(001)]. The O{sub 2} desorption collimated in inclined ways in the plane along the surface trough, confirming the hot-atom collision mechanism. In the presence of CO(a), the product CO{sub 2} desorption also collimated in an inclined way, whereas the inclined O{sub 2} desorption was suppressed. The inclined O{sub 2} and CO{sub 2} desorption is explained by a common collision-induced desorption model. At high O{sub 2} coverage, the CO{sub 2} desorption collimated closely along the (111) terrace normal.

  7. The strong catalytic effect of Pb(II) on the oxygen reduction reaction on 5 nm gold nanoparticles.

    PubMed

    Wang, Ying; Laborda, Eduardo; Plowman, Blake J; Tschulik, Kristina; Ward, Kristopher R; Palgrave, Robert G; Damm, Christine; Compton, Richard G

    2014-02-21

    Citrate-capped gold nanoparticles (AuNPs) of 5 nm in diameter are synthesized via wet chemistry and deposited on a glassy carbon electrode through electrophoresis. The kinetics of the oxygen reduction reaction (ORR) on the modified electrode is determined quantitatively in oxygen-saturated 0.5 M sulphuric acid solution by modelling the cathode as an array of interactive nanoelectrodes. Quantitative analysis of the cyclic voltammetry shows that no apparent ORR electrocatalysis takes place, the kinetics on AuNPs being effectively the same as on bulk gold. Contrasting with the above, a strong ORR catalysis is found when Pb(2+) is added to the oxygen saturated solution or when the modified electrode is cycled in lead alkaline solution such that lead dioxide is repeatedly electrodeposited and stripped off on the nanoparticles. In both cases, the underpotential deposition of lead on the gold nanoparticles is found to be related to the catalysis.

  8. Direct Photolysis of Fluoroquinolone Antibiotics at 253.7 nm: Specific Reaction Kinetics and Formation of Equally Potent Fluoroquinolone Antibiotics.

    PubMed

    Snowberger, Sebastian; Adejumo, Hollie; He, Ke; Mangalgiri, Kiranmayi P; Hopanna, Mamatha; Soares, Ana Dulce; Blaney, Lee

    2016-09-06

    Three fluoroquinolone-to-fluoroquinolone antibiotic transformations were monitored during UV-C irradiation processes. In particular, the following reactions were observed: enrofloxacin-to-ciprofloxacin, difloxacin-to-sarafloxacin, and pefloxacin-to-norfloxacin. The apparent molar absorptivity and fluence-based pseudo-first-order rate constants for transformation of the six fluoroquinolones by direct photolysis at 253.7 nm were determined for the pH 2-12 range. These parameters were deconvoluted to calculate specific molar absorptivity and fluence-based rate constants for cationic, zwitterionic, and anionic fluoroquinolone species. For a typical disinfection fluence of 40 mJ/cm(2), the apparent transformation efficiencies were inflated by 2-8% when fluoroquinolone products were not considered; moreover, the overall transformation efficiencies at 400 mJ/cm(2) varied by up to 40% depending on pH. The three product antibiotics, namely ciprofloxacin, sarafloxacin, and norfloxacin, were found to be equally or more potent than the parent fluoroquinolones using an Escherichia coli-based assay. UV treatment of a solution containing difloxacin was found to increase antimicrobial activity due to formation of sarafloxacin. These results highlight the importance of considering antibiotic-to-antibiotic transformations in UV-based processes.

  9. Development of 1480 nm Photothermal High-Speed Real-Time Polymerase Chain Reaction System for Rapid Nucleotide Recognition

    NASA Astrophysics Data System (ADS)

    Terazono, Hideyuki; Hattori, Akihiro; Takei, Hiroyuki; Takeda, Kazuo; Yasuda, Kenji

    2008-06-01

    The polymerase chain reaction (PCR) is a key technology used in genome-based biological analysis; however, requests have been made to shorten the operation time for emergency tests such as medical diagnostics, and countermeasures against bioterrorism. We have developed a novel rapid real-time PCR system using the direct absorption of an IR laser beam by water droplets as the heating device. The advantage of this system is that only the target water droplet was heated photothermally without transmitting any heat to the surroundings, which is important for the production of fast thermal cycle intervals. The system consists of a fluorescent microscope, an oil chamber with a set of water droplets lined up at the bottom, a 1480 nm IR laser unit, which is absorbed by water and can be focused on the droplets on the stage of the microscope, and an image intensifier to quantify the PCR reaction within a water droplet by measuring the change of fluorescent intensity. Using the system, we examined the PCR procedure under the following conditions: initial heating to 95 °C, maintaining this temperature for 10 s, and the suggested here and in similar places throughout 50 cycles of 1 s at 95 °C for denaturation and 3 s at 60 °C for annealing/extension. The temperature increase and decrease between the two temperatures 95 and 60 °C, were within 1 and 0.8 s respectively, i.e., 32 K/s, which is 1.5 times faster than the conventional heat conduction-based system. Rapid PCR amplification was observed successfully by the rise change in the sigmoidal curvature of fluorescent intensity, and the procedure was accomplished within 3.5 min, including the initial heating and complete 50 PCR cycles. The results indicate that the direct absorption-based heating of water droplets photothermally could give us a faster temperature chnage than the conventional heat-conduction-based systems such as Peltier heating/cooling.

  10. Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

    NASA Astrophysics Data System (ADS)

    Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

    2017-03-01

    Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

  11. Sub-4 nm PtZn Intermetallic Nanoparticles for Enhanced Mass and Specific Activities in Catalytic Electrooxidation Reaction

    DOE PAGES

    Qi, Zhiyuan; Xiao, Chaoxian; Liu, Cong; ...

    2017-03-08

    Atomically ordered intermetallic nanoparticles (iNPs) have sparked considerable interest in fuel cell applications by virtue of their exceptional electronic and structural properties. However, the synthesis of small iNPs in a controllable manner remains a formidable challenge because of the high temperature generally required in the formation of intermetallic phases. Here in this paper we report a general method for the synthesis of PtZn iNPs (3.2 ± 0.4 nm) on multiwalled carbon nanotubes (MWNT) via a facile and capping agent free strategy using a sacrificial mesoporous silica (mSiO2) shell. The as-prepared PtZn iNPs exhibited ca. 10 times higher mass activity inmore » both acidic and basic solution toward the methanol oxidation reaction (MOR) compared to larger PtZn iNPs synthesized on MWNT without the mSiO2 shell. Density functional theory (DFT) calculations predict that PtZn systems go through a “non-CO” pathway for MOR because of the stabilization of the OH* intermediate by Zn atoms, while a pure Pt system forms highly stable COH* and CO* intermediates, leading to catalyst deactivation. Experimental studies on the origin of the backward oxidation peak of MOR coincide well with DFT predictions. Moreover, the calculations demonstrate that MOR on smaller PtZn iNPs is energetically more favorable than larger iNPs, due to their high density of corner sites and lower-lying energetic pathway. Therefore, smaller PtZn iNPs not only increase the number but also enhance the activity of the active sites in MOR compared with larger ones. This work opens a new avenue for the synthesis of small iNPs with more undercoordinated and enhanced active sites for fuel cell applications.« less

  12. Fundamental study on reaction mechanisms in chemically amplified extreme ultraviolet resists by using 61nm free-electron laser

    NASA Astrophysics Data System (ADS)

    Okamoto, Kazumasa; Kozawa, Takahiro; Hatsui, Takaki; Tajima, Yasuharu; Oikawa, Keita; Nagasono, Mitsuru; Kameshima, Takashi; Togashi, Tadashi; Tono, Kensuke; Yabashi, Makina; Kimura, Hiroaki; Senba, Yasunori; Ohashi, Haruhiko; Sumiyoshi, Takashi

    2011-04-01

    For chemically amplified EUV resists, secondary electrons derived from ionization events play a critical role in the sensitization of acid generators. In this study, we show the dependence of acid generation efficiency on dose rate (fluence per pulse duration) by using 61 nm free-electron laser (FEL) light irradiation. The wavelength of 61 nm (20.3 eV) is applied because single incident photon induces only single ionization event, in contrast to the 13.4 nm EUV photon that induces 4.2 ionization events on average. The acid yield efficiency has enhances with decreasing the dose rate. It is suggested that high density ionization enhances the multiple spur effect.

  13. 248-nm laser photolysis of CHBr3/O-atom mixtures: kinetic evidence for UV CO(A) chemiluminescence in the reaction of methylidyne radicals with atomic oxygen.

    PubMed

    Vaghjiani, Ghanshyam L

    2005-03-17

    The 4th positive and Cameron band emissions from electronically excited CO have been observed for the first time in 248-nm pulsed laser photolysis of a trace amount of CHBr(3) vapor in an excess of O atoms. O atoms were produced by dissociation of N(2)O (or O(2)) in a cw-microwave discharge cavity in 2.0 Torr of He at 298 K. The CO emission intensity in these bands showed a quadratic dependence on the laser fluence employed. Temporal profiles of the CO(A) and other excited-state products that formed in the photoproduced precursor + O-atom reactions were measured by recording their time-resolved chemiluminescence in discrete vibronic bands. The CO 4th positive transition (A(1)Pi, v' = 0 --> X(1)Sigma(+), v' ' = 2) near 165.7 nm was monitored in this work to deduce the pseudo-first-order decay kinetics of the CO(A) chemiluminescence in the presence of various added substrates (CH(4), NO, N(2)O, H(2), and O(2)). From this, the second-order rate coefficient values were determined for reactions of these substrates with the photoproduced precursors. The measured reactivity trends suggest that the prominent precursors responsible for the CO(A) chemiluminescence are the methylidyne radicals, CH(X(2)Pi) and CH(a(4)Sigma(-)), whose production requires the absorption of at least 2 laser photons by the photolysis mixture. The O-atom reactions with brominated precursors (CBr, CHBr, and CBr(2)), which also form in the photolysis, are shown to play a minor role in the production of the CO(A or a) chemiluminescence. However, the CBr(2) + O-atom reaction was identified as a significant source for the 289.9-nm Br(2) chemiluminescence that was also observed in this work. The 282.2-nm OH and the 336.2-nm NH chemiluminescences were also monitored to deduce the kinetics of CH(X(2)Pi) and CH(a(4)Sigma(-)) reactions when excess O(2) and NO were present.

  14. Uniform 2 nm gold nanoparticles supported on iron oxides as active catalysts for CO oxidation reaction: Structure-activity relationship

    SciTech Connect

    Guo, Yu; Senanayake, Sanjaya; Gu, Dong; Jin, Zhao; Du, Pei -Pei; Si, Rui; Xu, Wen -Qian; Huang, Yu -Ying; Tao, Jing; Song, Qi -Sheng; Jia, Chun -Jia; Schueth, Ferdi

    2015-01-12

    Uniform Au nanoparticles (~2 nm) with narrow size-distribution (standard deviation: 0.5–0.6 nm) supported on both hydroxylated (Fe_OH) and dehydrated iron oxide (Fe_O) have been prepared by either deposition-precipitation (DP) or colloidal-deposition (CD) methods. Different structural and textural characterizations were applied to the dried, calcined and used gold-iron oxide samples. The transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) described the high homogeneity in the supported Au nanoparticles. The ex-situ and in-situ X-ray absorption fine structure (XAFS) characterization monitored the electronic and short-range local structure of active gold species. The synchrotron-based in-situ X-ray diffraction (XRD), together with the corresponding temperature-programmed reduction by hydrogen (H₂-TPR), indicated a structural evolution of the iron-oxide supports, correlating to their reducibility. An inverse order of catalytic activity between DP (Au/Fe_OH < Au/Fe_O) and CD (Au/Fe_OH > Au/Fe_O) was observed. Effective gold-support interaction results in a high activity for gold nanoparticles, locally generated by the sintering of dispersed Au atoms on the oxide support in the DP synthesis, while a hydroxylated surface favors the reactivity of externally introduced Au nanoparticles on Fe_OH support for the CD approach. This work reveals why differences in the synthetic protocol translate to differences in the catalytic performance of Au/FeOx catalysts with very similar structural characteristics in CO oxidation.

  15. Uniform 2 nm gold nanoparticles supported on iron oxides as active catalysts for CO oxidation reaction: Structure-activity relationship

    DOE PAGES

    Guo, Yu; Senanayake, Sanjaya; Gu, Dong; ...

    2015-01-12

    Uniform Au nanoparticles (~2 nm) with narrow size-distribution (standard deviation: 0.5–0.6 nm) supported on both hydroxylated (Fe_OH) and dehydrated iron oxide (Fe_O) have been prepared by either deposition-precipitation (DP) or colloidal-deposition (CD) methods. Different structural and textural characterizations were applied to the dried, calcined and used gold-iron oxide samples. The transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) described the high homogeneity in the supported Au nanoparticles. The ex-situ and in-situ X-ray absorption fine structure (XAFS) characterization monitored the electronic and short-range local structure of active gold species. The synchrotron-based in-situ X-ray diffraction (XRD), together with the corresponding temperature-programmed reductionmore » by hydrogen (H₂-TPR), indicated a structural evolution of the iron-oxide supports, correlating to their reducibility. An inverse order of catalytic activity between DP (Au/Fe_OH < Au/Fe_O) and CD (Au/Fe_OH > Au/Fe_O) was observed. Effective gold-support interaction results in a high activity for gold nanoparticles, locally generated by the sintering of dispersed Au atoms on the oxide support in the DP synthesis, while a hydroxylated surface favors the reactivity of externally introduced Au nanoparticles on Fe_OH support for the CD approach. This work reveals why differences in the synthetic protocol translate to differences in the catalytic performance of Au/FeOx catalysts with very similar structural characteristics in CO oxidation.« less

  16. Use of photo-Fenton's reaction by 400-nm LED light for endodontic disinfection: A preliminary in vitro study on Enterococcus faecalis.

    PubMed

    Lagori, Giuseppe; Fornaini, Carlo; Rocca, Jean-Paul; Merigo, Elisabetta

    2017-06-01

    One of the biggest challenges in endodontics is the complete disinfection of root canals. In addition to mechanical preparation, the technique traditionally also involves channel disinfection with other agents such as sodium hypochlorite, hydrogen peroxide, chlorhexidine, or a combination of these. Some bacterial species are particularly resistant to eradication. Using Enterococcus faecalis in this preliminary study, we tested the bactericidal effectiveness of the Fenton reaction and the photo-Fenton reaction using an LED light with a 400-nm wavelength. Discs of hydroxyapatite were incubated in brain-heart broth contaminated with Enterococcus faecalis. After 4days, they were decontaminated with different bactericidal agents, including some with proven and well-known efficacy (5% sodium hypochlorite and 3% hydrogen peroxide) and other treatments using solutions of 1.5% hydrogen peroxide and 0.15% iron gluconate (Fenton reaction) plus LED light at a Fluence of 4.0J/cm(2) (photo-Fenton reaction). The photo-Fenton reaction demonstrated comparable performance to that of sodium hypochlorite in eliminating Enterococcus faecalis. Copyright © 2017. Published by Elsevier B.V.

  17. Constructing Solid-Gas-Interfacial Fenton Reaction over Alkalinized-C3N4 Photocatalyst To Achieve Apparent Quantum Yield of 49% at 420 nm.

    PubMed

    Li, Yunxiang; Ouyang, Shuxin; Xu, Hua; Wang, Xin; Bi, Yingpu; Zhang, Yuanfang; Ye, Jinhua

    2016-10-03

    Efficient generation of active oxygen-related radicals plays an essential role in boosting advanced oxidation process. To promote photocatalytic oxidation for gaseous pollutant over g-C3N4, a solid-gas interfacial Fenton reaction is coupled into alkalinized g-C3N4-based photocatalyst to effectively convert photocatalytic generation of H2O2 into oxygen-related radicals. This system includes light energy as power, alkalinized g-C3N4-based photocatalyst as an in situ and robust H2O2 generator, and surface-decorated Fe(3+) as a trigger of H2O2 conversion, which attains highly efficient and universal activity for photodegradation of volatile organic compounds (VOCs). Taking the photooxidation of isopropanol as model reaction, this system achieves a photoactivity of 2-3 orders of magnitude higher than that of pristine g-C3N4, which corresponds to a high apparent quantum yield of 49% at around 420 nm. In-situ electron spin resonance (ESR) spectroscopy and sacrificial-reagent incorporated photocatalytic characterizations indicate that the notable photoactivity promotion could be ascribed to the collaboration between photocarriers (electrons and holes) and Fenton process to produce abundant and reactive oxygen-related radicals. The strategy of coupling solid-gas interfacial Fenton process into semiconductor-based photocatalysis provides a facile and promising solution to the remediation of air pollution via solar energy.

  18. Optical identification of the long-wavelength (700-1700 nm) electronic excitations of the native reaction centre, Mn4CaO5 cluster and cytochromes of photosystem II in plants and cyanobacteria.

    PubMed

    Morton, Jennifer; Akita, Fusamichi; Nakajima, Yoshiki; Shen, Jian-Ren; Krausz, Elmars

    2015-02-01

    Visible/UV absorption in PS II core complexes is dominated by the chl-a absorptions, which extend to ~700 nm. A broad 700-730 nm PS II core complex absorption in spinach has been assigned to a charge transfer excitation between ChlD1 and ChlD2. Emission from this state, which peaks at 780 nm, has been seen for both plant and cyanobacterial samples. We show that Thermosynechococcus vulcanus PS II core complexes have parallel absorbance in the 700-730 nm region and similar photochemical behaviour to that seen in spinach. This establishes the low energy charge transfer state as intrinsic to the native PS II reaction centre. High-sensitivity MCD measurements made in the 700-1700 nm region reveal additional electronic excitations at ~770 nm and ~1550 nm. The temperature and field dependence of MCD spectra establish that the system peaking near 1550 nm is a heme-to-Fe(III) charge transfer excitation. These transitions have not previously been observed for cyt b559 or cyt c550. The distinctive characteristics of the MCD signals seen at 770 nm allow us to assign absorption in this region to a dz(2)→d(x2-y2) transition of Mn(III) in the Ca-Mn4O5 cluster of the oxygen evolving centre. Current measurements were performed in the S1 state. Detailed analyses of this spectral region, especially in higher S states, promise to provide a new window on models of water oxidation. Copyright © 2014 Elsevier B.V. All rights reserved.

  19. X-ray induced chemical reaction revealed by in-situ X-ray diffraction and scanning X-ray microscopy in 15 nm resolution (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Ge, Mingyuan; Liu, Wenjun; Bock, David; De Andrade, Vincent; Yan, Hanfei; Huang, Xiaojing; Marschilok, Amy; Takeuchi, Esther; Xin, Huolin; Chu, Yong S.

    2016-09-01

    The detection sensitivity of synchrotron-based X-ray techniques has been largely improved due to the ever increasing source brightness, which have significantly advanced ex-situ and in-situ research for energy materials, such as lithium-ion batteries. However, the strong beam-matter interaction arisen from the high beam flux can significantly modify the material structure. The parasitic beam-induced effect inevitably interferes with the intrinsic material property, which brings difficulties in interpreting experimental results, and therefore requires comprehensive evaluation. Here we present a quantitative in-situ study of the beam-effect on one electrode material Ag2VO2PO4 using four different X-ray probes with different radiation dose rate. The material system we reported exhibits interesting and reversible radiation-induced thermal and chemical reactions, which was further evaluated under electron microscopy to illustrate the underlying mechanism. The work we presented here will provide a guideline in using synchrotron X-rays to distinguish the materials' intrinsic behavior from extrinsic structure changed induced by X-rays, especially in the case of in-situ and operando study where the materials are under external field of either temperature or electric field.

  20. Soft X-ray spectroscopy studies of adsorption and reaction of CO in the presence of H2 over 6 nm MnO nanoparticles supported on mesoporous Co3O4

    NASA Astrophysics Data System (ADS)

    Ralston, Walter T.; Musselwhite, Nathan; Kennedy, Griffin; An, Kwangjin; Horowitz, Yonatan; Cordones, Amy A.; Rude, Bruce; Ahmed, Musahid; Melaet, Gerome; Alayoglu, Selim

    2016-06-01

    MnO nanoparticles (6 nm) were supported on mesoporous spinel Co3O4 and studied using ambient pressure X-ray photoelectron spectroscopy (APXPS) and in situ X-ray absorption spectroscopy (XAS) during hydrogenation of CO. The nature and evolution of surface adsorbed species as well as the oxidation states of the metal oxide surfaces were evaluated under oxidizing, reducing, and H2 + CO (2:1) reaction atmospheres. From APXPS, MnO nanoparticle surfaces were found to be progressively reduced in H2 atmospheres with increasing temperature. Surface adsorbed CO was found to be formed at the expense of lattice O under H2 + CO reaction conditions. In situ XAS indicated that the dominant oxide species were Co(OH)2, Co (II) oxides, MnO, and Mn3O4 under reaction conditions. In situ XAS also indicated the formation of gas phase CO2, the disappearance of lattice O, and the further reduction of Mn3O4 to MnO upon prolonged reaction in H2 + CO. Mass spectroscopy measurements showed the formation of CO2 and hydrocarbons. The spent catalyst was investigated using scanning transmission X-ray microscopy and (scanning) transmission electron microscopy; the catalyst grains were found to be homogeneous.

  1. In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length

    NASA Astrophysics Data System (ADS)

    Chen, Renjie; Nguyen, Binh-Minh; Tang, Wei; Liu, Yang; Yoo, Jinkyoung; Dayeh, Shadi A.

    2017-05-01

    The metal-semiconductor interface in self-aligned contact formation can determine the overall performance of nanoscale devices. This interfacial morphology is predicted and well researched in homogenous semiconductor nanowires (NWs) but was not pursued in heterostructured core/shell nanowires. We found here that the solid-state reactions between Ni and Ge/Si core/shell nanowires resulted in a protruded and a leading NiSiy segment into the channel. A single Ni2Ge/NiSiy to Ge/Si core/shell interface was achieved by the selective shell removal near the Ni source/drain contact areas. Using in situ transmission electron microscopy, we measured the growth rate and anisotropic strain evolution in ultra-short channels. We found elevated compressive strains near the interface between the compound contact and the NW and relatively lower strains near the center of the channel which increased exponentially below the 10 nm channel length to exceed 10% strain at ˜3 nm lengths. These compressive strains are expected to result in a non-homogeneous energy band structure in Ge/Si core/shell NWs below 10 nm and potentially benefit their transistor performance.

  2. In situ control of synchronous germanide/silicide reactions with Ge/Si core/shell nanowires to monitor formation and strain evolution in abrupt 2.7 nm channel length

    DOE PAGES

    Chen, Renjie; Nguyen, Binh-Minh; Tang, Wei; ...

    2017-05-22

    The metal-semiconductor interface in self-aligned contact formation can determine the overall performance of nanoscale devices. This interfacial morphology is predicted and well researched in homogenous semiconductor nanowires (NWs) but was not pursued in heterostructured core/shell nanowires. Here, we found here that the solid-state reactions between Ni and Ge/Si core/shell nanowires resulted in a protruded and a leading NiSiy segment into the channel. A single Ni2Ge/NiSiy to Ge/Si core/shell interface was achieved by the selective shell removal near the Ni source/drain contact areas. In using in situ transmission electron microscopy, we measured the growth rate and anisotropic strain evolution in ultra-shortmore » channels. We also found elevated compressive strains near the interface between the compound contact and the NW and relatively lower strains near the center of the channel which increased exponentially below the 10 nm channel length to exceed 10% strain at ~3 nm lengths. These compressive strains are expected to result in a non-homogeneous energy band structure in Ge/Si core/shell NWs below 10 nm and potentially benefit their transistor performance.« less

  3. Destruction of microcystins (cyanotoxins) by UV-254 nm-based direct photolysis and advanced oxidation processes (AOPs): influence of variable amino acids on the degradation kinetics and reaction mechanisms.

    PubMed

    He, Xuexiang; de la Cruz, Armah A; Hiskia, Anastasia; Kaloudis, Triantafyllos; O'Shea, Kevin; Dionysiou, Dionysios D

    2015-05-01

    Hepatotoxic microcystins (MCs) are the most frequently detected group of cyanobacterial toxins. This study investigated the degradation of common MC variants in water, MC-LR, MC-RR, MC-YR and MC-LA, by UV-254 nm-based processes, UV only, UV/H2O2, UV/S2O8(2-) and UV/HSO5(-). Limited direct photolysis of MCs was observed, while the addition of an oxidant significantly improved the degradation efficiency with an order of UV/S2O8(2-) > UV/HSO5(-) > UV/H2O2 at the same initial molar concentration of the oxidant. The removal of MC-LR by UV/H2O2 appeared to be faster than another cyanotoxin, cylindrospermopsin, at either the same initial molar concentration or the same initial organic carbon concentration of the toxin. It suggested a faster reaction of MC-LR with hydroxyl radical, which was further supported by the determined second-order rate constant of MCs with hydroxyl radical. Both isomerization and photohydration byproducts were observed in UV only process for all four MCs; while in UV/H2O2, hydroxylation and diene-Adda double bond cleavage byproducts were detected. The presence of a tyrosine in the structure of MC-YR significantly promoted the formation of monohydroxylation byproduct m/z 1061; while the presence of a second arginine in MC-RR led to the elimination of a guanidine group and the absence of double bond cleavage byproducts. It was therefore demonstrated in this study that the variable amino acids in the structure of MCs influenced not only the degradation kinetics but also the preferable reaction mechanisms.

  4. Sub-10 nm nanopantography

    NASA Astrophysics Data System (ADS)

    Tian, Siyuan; Donnelly, Vincent M.; Ruchhoeft, Paul; Economou, Demetre J.

    2015-11-01

    Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

  5. Albuquerque, NM, USA

    NASA Technical Reports Server (NTRS)

    1991-01-01

    Albuquerque, NM (35.0N, 106.5W) is situated on the edge of the Rio Grande River and flood plain which cuts across the image. The reddish brown surface of the Albuquerque Basin is a fault depression filled with ancient alluvial fan and lake bed sediments. On the slopes of the Manzano Mountains to the east of Albuquerque, juniper and other timber of the Cibola National Forest can be seen as contrasting dark tones of vegetation.

  6. 469nm Fiber Laser Source

    SciTech Connect

    Drobshoff, A; Dawson, J W; Pennington, D M; Payne, S A; Beach, R

    2005-01-20

    We have demonstrated 466mW of 469nm light from a frequency doubled continuous wave fiber laser. The system consisted of a 938nm single frequency laser diode master oscillator, which was amplified in two stages to 5 Watts using cladding pumped Nd{sup 3+} fiber amplifiers and then frequency doubled in a single pass through periodically poled KTP. The 3cm long PPKTP crystal was made by Raicol Crystals Ltd. with a period of 5.9 {micro}m and had a phase match temperature of 47 degrees Centigrade. The beam was focused to a 1/e{sup 2} diameter in the crystal of 29 {micro}m. Overall conversion efficiency was 11% and the results agreed well with standard models. Our 938nm fiber amplifier design minimizes amplified spontaneous emission at 1088nm by employing an optimized core to cladding size ratio. This design allows the 3-level transition to operate at high inversion, thus making it competitive with the 1088nm 4-level transition. We have also carefully chosen the fiber coil diameter to help suppress propagation of wavelengths longer than 938 nm. At 2 Watts, the 938nm laser had an M{sup 2} of 1.1 and good polarization (correctable with a quarter and half wave plate to >10:1).

  7. Sub-180 nm generation with borate crystal

    NASA Astrophysics Data System (ADS)

    Qu, Chen; Yoshimura, Masashi; Tsunoda, Jun; Kaneda, Yushi; Imade, Mamoru; Sasaki, Takatomo; Mori, Yusuke

    2014-10-01

    We demonstrated a new scheme for the generation of 179 nm vacuum-ultraviolet (VUV) light with an all-solid-state laser system. It was achieved by mixing the deep-ultraviolet (DUV) of 198.8 nm and the infrared (IR) of 1799.9 nm. While CsB3O5 (CBO) did not satisfy the phase-matching at around 180 nm, 179 nm output was generated with LiB3O5 (LBO) for the first time. The phase-matching property of LBO at around 180 nm was also investigated. There was small deviation from theoretical curve in the measurement, which is still considered reasonable.

  8. 670-nm light treatment reduces complement propagation following retinal degeneration

    PubMed Central

    2012-01-01

    Aim Complement activation is associated with the pathogenesis of age-related macular degeneration (AMD). We aimed to investigate whether 670-nm light treatment reduces the propagation of complement in a light-induced model of atrophic AMD. Methods Sprague–Dawley (SD) rats were pretreated with 9 J/cm2 670-nm light for 3 minutes daily over 5 days; other animals were sham treated. Animals were exposed to white light (1,000 lux) for 24 h, after which animals were kept in dim light (5 lux) for 7 days. Expression of complement genes was assessed by quantitative polymerase chain reaction (qPCR), and immunohistochemistry. Counts were made of C3-expressing monocytes/microglia using in situ hybridization. Photoreceptor death was also assessed using outer nuclear layer (ONL) thickness measurements, and oxidative stress using immunohistochemistry for 4-hydroxynonenal (4-HNE). Results Following light damage, retinas pretreated with 670-nm light had reduced immunoreactivity for the oxidative damage maker 4-HNE in the ONL and outer segments, compared to controls. In conjunction, there was significant reduction in retinal expression of complement genes C1s, C2, C3, C4b, C3aR1, and C5r1 following 670 nm treatment. In situ hybridization, coupled with immunoreactivity for the marker ionized calcium binding adaptor molecule 1 (IBA1), revealed that C3 is expressed by infiltrating microglia/monocytes in subretinal space following light damage, which were significantly reduced in number after 670 nm treatment. Additionally, immunohistochemistry for C3 revealed a decrease in C3 deposition in the ONL following 670 nm treatment. Conclusions Our data indicate that 670-nm light pretreatment reduces lipid peroxidation and complement propagation in the degenerating retina. These findings have relevance to the cellular events of complement activation underling the pathogenesis of AMD, and highlight the potential of 670-nm light as a non-invasive anti-inflammatory therapy. PMID:23181358

  9. Simultaneous three-wavelength continuous wave laser at 946 nm, 1319 nm and 1064 nm in Nd:YAG

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Zhao, Lianshui; Zhai, Pei; Xia, Jing; Fu, Xihong; Li, Shutao

    2013-01-01

    A continuous-wave (cw) diode-end-pumped Nd:YAG laser that generates simultaneous laser at the wavelengths 946 nm, 1319 nm and 1064 nm is demonstrated. The optimum oscillation condition for the simultaneous three-wavelength operation has been derived. Using the separation of the three output couplers, we obtained the maximum output powers of 0.24 W at 946 nm, 1.07 W at 1319 nm and 1.88 W at 1064 nm at the absorbed pump power of 11.2 W. A total output power of 3.19 W for the three-wavelength was achieved at the absorbed pump power of 11.2 W with optical conversion efficiency of 28.5%.

  10. New antireflective coatings for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Xu, Gu; Guerrero, Douglas J.; Dobson, Norman

    1998-06-01

    New bottom antireflective coatings (BARCs) for 193 nm lithography have been recently developed by Brewer Science Inc. Copolymers of benzyl methacrylate (or benzyl acrylate) and hydroxypropyl methacrylate have been synthesized and used as a main component in 193 nm BARCs. The acrylic copolymers have strong absorbance at 193 nm UV light wavelength. The 193 nm BARCs were formulated in safe solvents such as ethyl lactate and formed by spin-on coating process. Thermosetting of the 193 nm BARCs limited their intermixing with photoresists. These 193 nm BARCs had optical density of about 10 micrometers -1, k equals 0.35, and n equals 1.81. Preliminary oxygen plasma etch rates were > 1.5 times DUV resists. Good profiles at small feature sizes (< 0.20 micrometers ) were achieved with tested photoresists.

  11. Pattern transfer processes for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Miyoshi, Seiro; Furukawa, Takamitsu; Watanabe, Hiroyuki; Irie, Shigeo; Itani, Toshiro

    2002-07-01

    We describe and evaluate three kinds of pattern transfer processes that are suitable for 157-nm lithography. These transfer processes are 1) a hard mask (HM) process using SiO as a HM material, 2) a HM process using an organic bottom anti-reflecting coating (BARC)/SiN structure, and 3) a bi- layer process using a silicon-containing resist and an organic film as the bottom layer. In all of these processes, the underlayer fo the resist acts as an anti-reflecting layer. For the HM processes, we patterned a newly developed fluorine-containing resist using a 157-nm microstepper, and transferred the resist patterns to the hard mask by reactive ion etching (RIE) with minimal critical dimension shift. Using the HM pattern, we then fabricated a 65nm Wsi/poly-Si gate pattern using a high-NA microstepper (NA=0.85). With the bi-layer process, we transferred a 60nm 1:1 lines and spaces pattern of a newly developed silicon-containing resist to a 300nm-thick organic film by RIE. The fabrication of a 65nm 1:1 gate pattern and 60nm 1:1 organic film patten clearly demonstrated that 157-nm lithography is the best candidate for fabricating sub-70nm node devices.

  12. Advances in 750 nm VECSELs (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Saarinen, Esa J.; Ranta, Sanna; Lyytikäinen, Jari; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Guina, Mircea

    2017-03-01

    Lasers operating in the transmission window of tissue at wavelengths between 700 and 800 nm are needed in numerous medical and biomedical applications, including photodynamic therapy and fluorescence microscopy. However, the performance of diode lasers in this spectral range is limited by the lack of appropriate compound semiconductors. Here, we review our recent research on 750 nm VECSELs. Two approaches to reaching the 750 nm wavelength will be discussed. The first approach relies on intra-cavity frequency doubling a wafer-fused 1500 nm VECSEL. The VECSEL gain chip comprises a GaAs-based DBR and an InP-based gain section, which allows for optical pumping with low-cost commercial diodes at 980 nm. With this scheme we have achieved watt-level output powers and tuning of the laser wavelength over a 40 nm band at around 750 nm. The second approach is direct emission at 750 nm using the AlGaAs/GaAs material system. In this approach visible wavelengths are required for optical pumping. However, the consequent higher costs compared to pumping at 980 nm are mitigated by the more compact laser setup and prospects of doubling the frequency to the ultraviolet range.

  13. Can DUV take us below 100 nm?

    NASA Astrophysics Data System (ADS)

    Finders, Jo; Jorritsma, Louis; Eurlings, Mark; Moerman, Richard; van Greevenbroek, Henk; van Schoot, Jan B.; Flagello, Donis G.; Socha, Robert J.; Stammler, Thomas

    2001-09-01

    Currently, the 130 nm SIA node is being implemented at leading edge semiconductor manufacturing facilities. Previously, this node appeared to be the insertion point for 193 nm lithography. However, it is evident that for the majority of applications 248 nm will be the wavelength of choice. This once again raises the question how far DUV lithography (248 nm) will take us. To investigate this, overlay, imaging and productivity related issues have to be considered. Although these items become more and more linked at low k1-factors (e.g. overlay and imaging), this paper will focus on some of the imaging related topics.

  14. Lithography strategy for 65-nm node

    NASA Astrophysics Data System (ADS)

    Borodovsky, Yan A.; Schenker, Richard E.; Allen, Gary A.; Tejnil, Edita; Hwang, David H.; Lo, Fu-Chang; Singh, Vivek K.; Gleason, Robert E.; Brandenburg, Joseph E.; Bigwood, Robert M.

    2002-07-01

    Intel will start high volume manufacturing (HVM) of the 65nm node in 2005. Microprocessor density and performance trends will continue to follow Moore's law and cost-effective patterning solutions capable of supporting it have to be found, demonstrated and developed during 2002-2004. Given the uncertainty regarding the readiness and respective capabilities of 157nm and 193nm lithography to support 65nm technology requirements, Intel is developing both lithographic options and corresponding infrastructure with the intent to use both options in manufacturing. Development and use of dual lithographic options for a given technology node in manufacturing is not a new paradigm for Intel: whenever introduction of a new exposure wavelength presented excessive risk to the manufacturing schedule, Intel developed parallel patterning approaches in time for the manufacturing ramp. Both I-line and 248nm patterning solutions were developed and successfully used in manufacturing of the 350nm node at Intel. Similarly, 248nm and 193nm patterning solutions were fully developed for 130nm node high volume manufacturing.

  15. 395-nm and 790-nm femtosecond laser ablation of aluminum-doped zinc oxide

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Higashikawa, Kouji; Hanabusa, Mitsugu

    2000-11-01

    We used 395-nm and 790-nm femtosecond laser pulses to deposit aluminum-doped zinc oxide films by pulsed laser deposition. Electrical resistivity of the films was lowered (5.6 x 104(Omega) cm) at 200 degree(s)C for the 395-nm laser pulses, while maintaining the optical transparency. In addition, the deposition rate increased six times. Optical emission was measured to compare the plumes generated by 395-nm and 790-nm laser pulses. We found that the emission from ions was suppressed relative to neutral atoms. Also the kinetic energy of ejected species was nearly doubled for the 395-nm laser pulses.

  16. Simultaneous triple 914 nm, 1084 nm, and 1086 nm operation of a diode-pumped Nd:YVO4 laser

    NASA Astrophysics Data System (ADS)

    Lü, Yanfei; Xia, Jing; Liu, Huilong; Pu, Xiaoyun

    2014-10-01

    We report a diode-pumped continuous-wave (cw) triple-wavelength Nd:YVO4 laser operating at 914, 1084, and 1086 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous triple-wavelength laser. Using a T-shaped cavity, we realized an efficient triple-wavelength operation at 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions for Nd:YVO4 crystal, simultaneously. At an absorbed pump power of 16 W (or 25 W of incident pump power), the maximum output power was 2.3 W, which included 914 nm, 1084 nm, and 1086 nm three wavelengths, and the optical conversion efficiency with respect to the absorbed pump power was 14.4%.

  17. Final report on the torque comparison EURAMET.M.T-S2, measurand torque: 10 N.m, 20 N.m, 40 N.m, 60 N.m, 80 N.m, and 100 N.m

    NASA Astrophysics Data System (ADS)

    Röske, Dirk

    2017-01-01

    The purpose of the EURAMET comparison EURAMET.M.T-S2 was to compare the measuring capabilities up to 100 N.m of a reference-type torque calibration machine of ZAG, Slovenia, with the torque standard machine of the Physikalisch-Technische Bundesanstalt (PTB, Braunschweig, Germany) acting as pilot laboratory. A very stable TT1 torque transducer with well-known properties and two torque measuring bridges was used as travelling standard. According to the technical protocol, torque steps of at least 10 N.m, 20 N.m, 40 N.m, 60 N.m, 80 N.m, and 100 N.m had to be measured both in clockwise and anticlockwise directions. For each of the torque steps and both senses of direction of the torque vector, En values were calculated. The results are in general in good agreement with the claimed measurement uncertainties except for the very first measurement at ZAG with additional support and four plate couplings. It seems to be sufficient in a vertical set-up (vertical torque axis) to use only two flexible couplings and there is no need for a further support between the transducers. The measurements with two couplings fulfill the requirement to the En value and support ZAG's claimed uncertainties of measurement. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  18. Sub-70-nm pattern fabrication using an alternating phase-shifting mask in 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Irie, Shigeo; Kanda, Noriyoshi; Watanabe, Kunio; Suganaga, Toshifumi; Itani, Toshiro

    2002-07-01

    In Selete, we have developed various resolution-enhancement technologies (RETs) such as the alternating phase shifting mask (alt-PSM), attenuated-PSM (att-PSM), and off-axis illumination (OAI). The alt-PSM, for example, reduces the k1 factor and extends the lithographic performance. A problem concerning the alt-PSM is the difference in the transmitted light intensities of the non-phase-shifting region and the phase-shifting region which can cause critical-dimension (CD) placement error. The transmitted light intensities of the two regions can be made equal by side-etching, in which the quartz (Qz) is undercut by wet-etching at the side of the transmitting region. We sought to optimize the mask structure in terms of a high numerical aperture (NA) through a simulation using two kinds of structures with a 157 nm exposure wavelength. The structures were a single-trench structure and a dual-trench structure, with each trench dug in the transmitting region. To attain a high NA (NA equals 0.85), we tried to optimize the parameters of the Cr film thickness, the amount of the undercut (side-etching), and the phase shift. The evaluated line pattern sizes were 70 nm (line/space size equals 70/70 nm, 70/140 nm, 70/210 nm, and 70/350 nm) and 50 nm (line/space size equals 50/50 nm, 50/100 nm, 50/150 nm, and 50/250 nm) at the wafer. Further, using the optimized mask, we calculated the lithographic margin of a sub 70 nm pattern through a simulation. For the 70 nm line patterns, we found that it will be difficult to fabricate precisely a 70 nm line patten using a mask with a single- trench structure. And we also found that the most suitable conditions for the dual-trench structure mask were a 90 nm undercut, a 100 nm Cr film thickness, and a 180 degree(s) phase shift. The exposure latitude at a depth of focus (DOF) of 0.3 micrometers , simulated using the optimized mask, was 5.3% for the 70/70 nm pattern, 3.6% for 70/140 nm 16.0% for 70/210 nm, and 29.3% for 70/350 nm. As the pitch

  19. Studies on nanosecond 532nm and 355nm and ultrafast 515nm and 532nm laser cutting super-hard materials

    NASA Astrophysics Data System (ADS)

    Zhang, Jie; Tao, Sha; Wang, Brian; Zhao, Jay

    2017-02-01

    In this paper, micro-processing of three kinds of super-hard materials of poly-crystal diamond (PCD)/tungsten-carbide (WC), CVD-diamond and cubic boron nitride (CNB) has been systematically studied using nanosecond laser (532nm and 355nm), and ultrafast laser (532nm and 515nm). Our purpose is to investigate a full laser micro-cutting solution to achieve a ready-to-use cutting tool insert (CTI). The results show a clean cut with little burns and recasting at edge. The cutting speed of 2-10mm/min depending on thickness was obtained. The laser ablation process was also studied by varying laser parameters (wavelength, pulse width, pulse energy, repetition rate) and tool path to improve cutting speed. Also, studies on material removal efficiency (MRE) of PCD/WC with 355nm-ns and 515nm-fs laser as a function of laser fluence show that 355nm-ns laser is able to achieve higher MRE for PCD and WC. Thus, ultrafast laser is not necessarily used for superhard material cutting. Instead, post-polishing with ultrafast laser can be used to clean cutting surface and improve smoothness.

  20. Sub-10 nm nanopantography

    SciTech Connect

    Tian, Siyuan Donnelly, Vincent M. E-mail: economou@uh.edu; Economou, Demetre J. E-mail: economou@uh.edu; Ruchhoeft, Paul

    2015-11-09

    Nanopantography, a massively parallel nanopatterning method over large areas, was previously shown to be capable of printing 10 nm features in silicon, using an array of 1000 nm-diameter electrostatic lenses, fabricated on the substrate, to focus beamlets of a broad area ion beam on selected regions of the substrate. In the present study, using lens dimensional scaling optimized by computer simulation, and reduction in the ion beam image size and energy dispersion, the resolution of nanopantography was dramatically improved, allowing features as small as 3 nm to be etched into Si.

  1. Fabrication of 10nm diameter carbon nanopores

    SciTech Connect

    Radenovic, Aleksandra; Trepagnier, Eliane; Csencsits, Roseann; Downing, Kenneth H; Liphardt, Jan

    2008-09-25

    The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.

  2. Laser Damage Growth in Fused Silica with Simultaneous 351 nm and 1053 nm irradiation

    SciTech Connect

    Norton, M A; Carr, A V; Carr, C W; Donohue, E E; Feit, M D; Hollingsworth, W G; Liao, Z; Negres, R A; Rubenchik, A M; Wegner, P J

    2008-10-24

    Laser-induced growth of optical damage often determines the useful lifetime of an optic in a high power laser system. We have extended our previous work on growth of laser damage in fused silica with simultaneous 351 nm and 1053 nm laser irradiation by measuring the threshold for growth with various ratios of 351 nm and 1053 nm fluence. Previously we reported that when growth occurs, the growth rate is determined by the total fluence. We now find that the threshold for growth is dependent on both the magnitude of the 351 nm fluence as well as the ratio of the 351 nm fluence to the 1053 nm fluence. Furthermore, the data suggests that under certain conditions the 1053 nm fluence does not contribute to the growth.

  3. Treatment of telangiectasias with the 532-nm and the 532/940-nm diode laser.

    PubMed

    Carniol, Paul J; Price, Jonathan; Olive, Alisa

    2005-05-01

    Recently, a dual-wavelength 532/940-nm laser has become available for treatment of facial vascular lesions as an alternative to the flashlamp pumped-dye lasers. Most facial vascular lesions will respond to the 532-nm wavelength. However, some of the larger and deeper lesions are resistant to this laser. The 940-nm wavelength can be used to treat these resistant lesions. Sixteen patients with 532-nm laser-resistant vascular lesions were treated with the 940-nm laser. Fourteen of these 16 patients had improvement in their telangiectasia in response to these treatments. Most facial l telangiectasias respond well to treatment with the 532-nm laser. However, some of the larger and deeper lesions will not respond well to this laser. The 940-nm wavelength laser can be used to treat these 532-nm laser resistant lesions.

  4. O(D-1) production in ozone photolysis near 310 nm

    NASA Technical Reports Server (NTRS)

    Lin, C.; Demore, W. B.

    1973-01-01

    Relative quantum yields of O(D-1)production, phi, in ozone photolysis from 275 nm to 334 nm were determined in the gas phase at 233 K. The O(D-1) was monitored by means of its reaction with isobutane to form isobutyl alcohol. The light source was a high pressure mercury lamp combined with a monochromator, with a bandwidth of 1.6 nm. The results show a constant phi below 300 nm, which is taken as unity on the basis of previous work. There is a very sharp fall-off in phi which is centered at 308 nm. At 313 nm phi is not greater than 0.1.

  5. Gallup, NM, CARE Grant Success Story

    EPA Pesticide Factsheets

    A CARE Grant, Level II award, was made to Gallup, NM to focus on cleaning up the waste stream, reuse and recycling of materials, and reclaiming land for these purposes through outreach, education and organization.

  6. 308nm Excimer Laser in Dermatology

    PubMed Central

    Mehraban, Shadi

    2014-01-01

    308nm xenon-chloride excimer laser, a novel mode of phototherapy, is an ultraviolet B radiation system consisting of a noble gas and halide. The aim of this systematic review was to investigate the literature and summarize all the experiments, clinical trials and case reports on 308-nm excimer laser in dermatological disorders. 308-nm excimer laser has currently a verified efficacy in treating skin conditions such as vitiligo, psoriasis, atopic dermatitis, alopecia areata, allergic rhinitis, folliculitis, granuloma annulare, lichen planus, mycosis fungoides, palmoplantar pustulosis, pityriasis alba, CD30+ lympho proliferative disorder, leukoderma, prurigo nodularis, localized scleroderma and genital lichen sclerosus. Although the 308-nm excimer laser appears to act as a promising treatment modality in dermatology, further large-scale studies should be undertaken in order to fully affirm its safety profile considering the potential risk, however minimal, of malignancy, it may impose. PMID:25606333

  7. Recent progress in 193-nm antireflective coatings

    NASA Astrophysics Data System (ADS)

    Meador, James D.; Guerrero, Douglas J.; Xu, Gu; Shao, Xie; Dobson, Norman; Claypool, James B.; Nowak, Kelly A.

    1999-06-01

    This paper presents the chemistries and properties of organic, spin-on, bottom antireflective coatings (BARCs) that are designed for 193 nm lithography. All of the BARCs are thermosetting and use dye-attached/incorporated polymers. A first generation product, NEXT, will soon be commercialized. NEXT is built form i-line and deep-UV chemistries with the polymeric constituent being a substitute novolac. This product provide outstanding resolution of 0.16 micrometers L/S with several 193 nm photoresists. Second generation chemical platforms under study include acrylics, polyesters, and polyethers with the 193 nm absorbing chromophore being an aromatic function. The performance of selected BARCs from the four platforms is described, including: optical properties, 193 nm litho, plasma etch rates, Prolith modeling data, spin-bowl and waste line compatibility, and ambient stability.

  8. Fabrication of sub-10 nm metal nanowire arrays with sub-1 nm critical dimension control

    NASA Astrophysics Data System (ADS)

    Pi, Shuang; Lin, Peng; Xia, Qiangfei

    2016-11-01

    Sub-10 nm metal nanowire arrays are important electrodes for building high density emerging ‘beyond CMOS’ devices. We made Pt nanowire arrays with sub-10 nm feature size using nanoimprint lithography on silicon substrates with 100 nm thick thermal oxide. We further studied the critical dimension (CD) evolution in the fabrication procedure and achieved 0.4 nm CD control, providing a viable solution to the imprint lithography CD challenge as specified by the international technology roadmap for semiconductors. Finally, we fabricated Pt/TiO2/Pt memristor crossbar arrays with the 8 nm electrodes, demonstrating great potential in dimension scaling of this emerging device.

  9. Laser etching of quartz and teflon with 157 nm and 193 nm laser radiation

    NASA Astrophysics Data System (ADS)

    Herman, Peter R.; Chen, Boyi; Moore, J. David

    1993-10-01

    Laser etching rates are presented for Teflon and quartz at 193 nm and 157 nm wavelengths. The shorter 157 nm wavelength yields high-quality surfaces with etching thresholds at low fluences of 57 and 470 mJ/cm2, respectively, affording features well-suited to micromachining applications in the electronics and photonics industries. At 193 nm, etching profiles are severely degraded. A computer model was developed to model the ablation, swelling, incubation, and plume absorption processes observed in Teflon under 193 nm irradiation. The computer results satisfactorily represent the experimental data over a large fluence range of 0.6 to 13 J/cm2 with four adjustable parameters.

  10. Drug Reactions

    MedlinePlus

    ... or diabetes. But medicines can also cause unwanted reactions. One problem is interactions, which may occur between ... more serious. Drug allergies are another type of reaction. They can be mild or life-threatening. Skin ...

  11. 810nm, 980nm, 1470nm and 1950nm diode laser comparison: a preliminary "ex vivo" study on oral soft tissues

    NASA Astrophysics Data System (ADS)

    Fornaini, Carlo; Merigo, Elisabetta; Sozzi, Michele; Selleri, Stefano; Vescovi, Paolo; Cucinotta, Annamaria

    2015-02-01

    The introduction of diode lasers in dentistry has several advantages, mainly consisting on the reduced size, reduced cost and possibility to beam delivering by optical fibers. At the moment the two diode wavelengths normally utilized in the dental field are 810 and 980 nm for soft tissues treatments. The aim of this study was to compare the efficacy of four different diode wavelengths: 810, 980, 1470 and 1950 nm diode laser for the ablation of soft tissues. Several samples of veal tongue were exposed to the four different wavelengths, at different fluences. The internal temperature of the soft tissues, in the area close to the beam, was monitored with thermocouple during the experiment. The excision quality of the exposed samples have been characterized by means of an optical microscope. Tissue damages and the cut regularity have been evaluated on the base of established criteria. The lowest thermal increase was recorded for 1950 nm laser. Best quality and speed of incision were obtained by the same wavelength. By evaluating epithelial, stromal and vascular damages for all the used wavelengths, the best result, in terms of "tissue respect", have been obtained for 1470 and 1950 nm exposures. From the obtained results 1470 and 1950 nm diode laser showed to be the best performer wavelengths among these used in this "ex vivo" study, probably due to their greatest affinity to water.

  12. Narrow linewidth UV sources at 257nm

    NASA Astrophysics Data System (ADS)

    Cole, Brian; Goldberg, Lew; McIntosh, Chris; King, Vernon; Hays, Alan

    2017-02-01

    We describe and compare the performance of two types of compact, passively Q-switched Yb:YAG 1030nm lasers and their use for 257nm fourth harmonic generation (FHG). In the first implementation, an end-pumped Yb:YAG laser produced a 250μJ pulse train with an average power at 1030nm of 3.6W. Using a 10mm LBO crystal (70% doubling efficiency), followed by a 7mm BBO crystal (45% conversion efficiency), 1.1W at 257nm was generated (overall FHG efficiency of 30%). The second implementation was a side-pumped Q-switched Yb:YAG laser pumped by a 200W diode bar. A 10mm KTP crystal followed by a 6mm BBO crystal resulted a 15% FHG conversion efficiency. The UV emission was in a form of 1-5 Hz PRF, 2ms long burst of 0.2mJ pulses with a 30kHz intra-burst PRF. Within a 1.65ms emission window, an 11.5mJ burst at 257 nm was generated that had a maximum intra-burst power of 7W. This paper will address the merits of each approach for realizing a man-portable laser suitable for ultraviolet Raman explosives detection.

  13. Radiation Failures in Intel 14nm Microprocessors

    NASA Technical Reports Server (NTRS)

    Bossev, Dobrin P.; Duncan, Adam R.; Gadlage, Matthew J.; Roach, Austin H.; Kay, Matthew J.; Szabo, Carl; Berger, Tammy J.; York, Darin A.; Williams, Aaron; LaBel, K.; hide

    2016-01-01

    In this study the 14 nm Intel Broadwell 5th generation core series 5005U-i3 and 5200U-i5 was mounted on Dell Inspiron laptops, MSI Cubi and Gigabyte Brix barebones and tested with Windows 8 and CentOS7 at idle. Heavy-ion-induced hard- and catastrophic failures do not appear to be related to the Intel 14nm Tri-Gate FinFET process. They originate from a small (9 m 140 m) area on the 32nm planar PCH die (not the CPU) as initially speculated. The hard failures seem to be due to a SEE but the exact physical mechanism has yet to be identified. Some possibilities include latch-ups, charge ion trapping or implantation, ion channels, or a combination of those (in biased conditions). The mechanism of the catastrophic failures seems related to the presence of electric power (1.05V core voltage). The 1064 nm laser mimics ionization radiation and induces soft- and hard failures as a direct result of electron-hole pair production, not heat. The 14nm FinFET processes continue to look promising for space radiation environments.

  14. Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2014-03-01

    The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

  15. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  16. Solution for 100 nm: EBM-4000

    NASA Astrophysics Data System (ADS)

    Hattori, Yoshiaki; Hattori, Kiyoshi; Murooka, Ken-ichi; Abe, Takayuki; Yasuda, Satoshi; Uno, Taiga; Murakami, Eiji; Nakayamada, Noriaki; Shimomura, Naoharu; Yamashita, Ttsuyoshi; Yamada, Noboru; Sakai, Akihiro; Honda, Hirohiko; Shimoyama, Toshiaki; Nakaso, Kiyoshi; Inoue, Hideo; Onimaru, Yoshiaki; Makiyama, Keiichi; Ogawa, Yoji; Takigawa, Tadahiro

    2002-07-01

    Optical lithography will be extended down to 65nm to 50 nm. However, a mask with high accurate CD uniformity and resolution enhancement technology (RET) such as optical proximity effect correction (OPC) and phase shifting mask (PSM) are required to achieve resolution by exposure wave length. The mask technology is the key of the optical lithography extension. We developed the electron beam mask writer EBM-3000 for 180-150nm design rule 1), 2), and EBM-3500 for 150-130nm design rule 3), to achieve high accuracy CD uniformity mask and small OPC pattern writing. They were variable shaped electron beam mask writing system with continuous moving stage, at 50kV acceleration voltage, and had the functions of multi-pass field shift writing, real-time proximity effect correction, grid matching correction, and automatic adjustment for election optical column.The LSI road map calls for such small minimum feature size as that so close to optical resolution limitation where increasingly complex optical proximity corrections (OPC) as well as extremely good mask CD uniformity are required. What is making the challenge even more difficult is that writing time is exponentially increasing as the shot number is exploding to primarily cope with the complex and voluminous OPC and extremely good CD uniformity requirements. Thus the newly developed electron beam mask lithography system EBM-4000 is designed to overcome all these difficult problems associated with 100nm as well as 70nm node masks. In order to increase throughput, triangle/rectangle beam optical column, high current density/high resolution lens, and high speed DAC amplifiers have been developed. To achieve accurate CD uniformity, foggy electron correction/loading effect correction functions are developed.

  17. 14nm M1 triple patterning

    NASA Astrophysics Data System (ADS)

    Li, Qiao; Ghosh, Pradiptya; Abercrombie, David; LaCour, Pat; Kanodia, Suniti

    2012-03-01

    With 20nm production becoming a reality, research has started to focus on the technology needs for 14nm. The LELE double patterning used in 20nm production will not be able to resolve M1 for 14nm. Main competing enabling technologies for the 14nm M1 are SADP, EUV, and LELELE (referred as LE3 thereafter) triple patterning. SADP has a number of concerns of 1. density, as a layout geometry needs to stay complete as a whole, and can not be broken; 2. the complexity in SADP mask generation and debug feedback to designers; 3. the subtraction nature of the trim mask further complicates OPC and yield. While EUV does not share those concerns, it faces significant challenges on the manufacturing equipment side. Of the SADP concerns, LE3 only shares that of complexity involved in mask generation and intuitive debug feedback mechanism. It does not require a layout geometry to stay as a whole, and it benefits from the affinity to LELE which is being deployed for 20nm production. From a process point of view, this benefit from affinity to LELE is tremendous due to the data and knowledge that have been collected and will be coming from the LELE deployment. In this paper, we first recount the computational complexity of the 3-colorability problem which is an integral part of a LE3 solution. We then describe graph characteristics that can be exploited such that 3-colorability is equivalent under divide-and-conquer. Also outlined are heuristics, which are generally applied in solving computationally intractable problems, for the 3-colorability problem, and the importance in choosing appropriate worst-case exponential runtime algorithms. This paper concludes with a discussion on the new hierarchical problem that faces 3-colorability but not 2-colorability and proposals for non-3-colorability feedback mechanism.

  18. 1550-nm wavelength-tunable HCG VCSELs

    NASA Astrophysics Data System (ADS)

    Chase, Christopher; Rao, Yi; Huang, Michael; Chang-Hasnain, Connie

    2014-02-01

    We demonstrate wavelength-tunable VCSELs using high contrast gratings (HCGs) as the top output mirror on VCSELs, operating at 1550 nm. Tunable HCG VCSELs with a ~25 nm mechanical tuning range as well as VCSELs with 2 mW output power were realized. Error-free operation of an optical link using directly-modulated tunable HCG VCSELs transmitting at 1.25 Gbps over 18 channels spaced by 100 GHz and transmitted over 20 km of single mode fiber is demonstrated, showing the suitability of the HCG tunable VCSEL as a low cost source for WDM communications systems.

  19. Comparative study of Nd:KGW lasers pumped at 808 nm and 877 nm

    NASA Astrophysics Data System (ADS)

    Huang, Ke; Ge, Wen-Qi; Zhao, Tian-Zhuo; He, Jian-Guo; Feng, Chen-Yong; Fan, Zhong-Wei

    2015-10-01

    The laser performance and thermal analysis of Nd:KGW laser continuously pumped by 808 nm and 877 nm are comparatively investigated. Output power of 670 mW and 1587 mW, with nearly TEM00 mode, are achieved respectively at 808 nm pump and 877 nm pump. Meanwhile, a high-power passively Q-switched Nd:KGW/Cr4+:YAG laser pumped at 877 nm is demonstrated. An average output power of 1495 mW is obtained at pump power of 5.22 W while the laser is operating at repetition of 53.17 kHz. We demonstrate that 877 nm diode laser is a more potential pump source for Nd:KGW lasers.

  20. Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Yamashita, T.; Ishikawa, T.; Yoshida, T.; Hayamai, T.; Araki, Takayuki; Aoyama, H.; Hagiwara, T.; Itani, Toshiro; Fujii, Kiyoshi

    2005-05-01

    Various fluorinated polymers were synthesized for application in 193-nm immersion lithography with the goal of improving 157-nm photoresist performance. Their fundamental properties were characterized, such as transparency at 193-nm and 157-nm (wavelength) and solubility in water and a standard alkaline developer. High transparency, i.e., absorbance better than 0.3 μm-1 at 193-nm wavelength, was achieved. The dissolution behaviors of them were studied by using the Quartz Crystal Microbalance (QCM) method. We find that the dissolution rate of Poly(norbornene-2-fluoro-2-hexafluoroalchol) (PNB1FVIP) in 0.065N tetramethylammonium hydroxide (TMAH) was >200 times (nm/s) faster than that of the copolymer of tetrafluoroethylene (TFE) and norbornene-2-fluoro-2-hexafluoroalchol (TFE/NB1FVIP). A resist based on TFE/NB1FVIP was able to delineate 75 nm dense lines by exposure at 193-nm (wavelength) with an alternating phase shift mask using a 0.75 NA ArF scanner. The dissolution rates of the fluoropolymers in water and a 0.262N and 0.065 TMAH can be controlled by optimizing counter monomers containing hexafluoroisopropanol (HFA) unit, carboxylic acid unit and so on. In addition, we have collect water contact angle data. This data shows that fluoropolymers can be used as resist cover materials for 193-nm immersion lithography.

  1. White Sands, Carrizozo Lava Beds, NM

    NASA Technical Reports Server (NTRS)

    1973-01-01

    A truly remarkable view of White Sands and the nearby Carrizozo Lava Beds in southeast NM (33.5N, 106.5W). White Sands, site of the WW II atomic bomb development and testing facility and later post war nuclear weapons testing that can still be seen in the cleared circular patterns on the ground.

  2. White Sands, Carrizozo Lava Beds, NM

    NASA Technical Reports Server (NTRS)

    1973-01-01

    A truly remarkable view of White Sands and the nearby Carrizozo Lava Beds in southeast NM (33.5N, 106.5W). White Sands, site of the WW II atomic bomb development and testing facility and later post war nuclear weapons testing that can still be seen in the cleared circular patterns on the ground.

  3. Radiation Tolerance of 65nm CMOS Transistors

    DOE PAGES

    Krohn, M.; Bentele, B.; Christian, D. C.; ...

    2015-12-11

    We report on the effects of ionizing radiation on 65 nm CMOS transistors held at approximately -20°C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.

  4. The 503nm pigment of Escherichia coli

    PubMed Central

    Kamitakahara, Joyce R.; Polglase, W. J.

    1970-01-01

    The yield of cell protein was one-third less for streptomycin-dependent Escherichia coli B than for the wild-type parent strain when both were grown aerobically on a medium with limiting glucose, but anaerobically the yield of protein was similar for both strains. The transient pigment absorbing at 503nm that is known to be present in E. coli and other organisms was not detectable in streptomycin-dependent mutants nor in a non-dependent (energy-deficient) revertant. When wild-type E. coli B was grown on limiting glucose–salts medium containing 2,4 dinitrophenol, the yield of cell protein was decreased and formation of the 503nm pigment was inhibited. Fumarase, aconitase and glucose 6-phosphate dehydrogenase were de-repressed in E. coli B cells grown with excess of glucose in a medium containing 2,4-dinitrophenol. In air-oxidized, wild-type E. coli B cells, the 503nm pigment appeared before reduced cytochromes when gluconate was the substrate but failed to appear when succinate was the substrate. The results provide evidence for a role of the 503nm pigment in aerobic energy metabolism, possibly as an electron acceptor from NADPH. PMID:4395501

  5. Endovenous laser ablation of the great saphenous vein comparing 1920-nm and 1470-nm diode laser.

    PubMed

    Mendes-Pinto, Daniel; Bastianetto, Paulo; Cavalcanti Braga Lyra, Lívia; Kikuchi, Rodrigo; Kabnick, Lowell

    2016-12-01

    The aim of this study was to compare venous occlusion rates at a one-year follow-up comparing 1920-nm versus 1470-nm endolaser. Randomized prospective study with consecutive patients with varicose veins associated to great saphenous reflux. The 1470-nm laser ablation was performed in continuous mode, with power of 10 W, while for the 1920-nm it was set in 5 W. Follow-up data were collected at the 7-day, 30-day, 3-month, 6-month and 1-year visits, and involved clinical, ultrasound evaluation and measurement of occlusion length. Sixty seven patients were included, with 42 limbs operated in the 1470-nm group and 48 limbs in the 1920-nm group. There were no differences in relation to age, CEAP (Clinical, Etiologic, Anatomical and Pathological Classification), VCSS (Venous Clinical Severity Score) and saphenous diameter. The resulting LEED in 1920-nm group was 17.8±0.6 J/cm and vs. 24.7±0.8 J/cm in 1470-nm group (P<0.01). Closure rates were lower for the 1920-nm group: 90.9% vs. 96.8% (P=0.06) at 30 days, 87.5% vs. 96.3% at 6 months (P=0.03), and 87.5% vs. 94.7% (P=0.05) at one year. The 1920-nm group had less ecchymosis (18.7% vs. 52.4%), induration (12.4% vs. 38.1%) and days of analgesic use (1.4±0.2 vs. 2.4±0.4). CEAP and VCSS were reduced over time in both groups. Treatment with endolaser 1920-nm was feasible and with reduced complications. The use of low endoluminal energy resulted in lower vein occlusion rates comparing to the 1470-nn laser. Clinical outcome scores were similar between groups.

  6. VizieR Online Data Catalog: Thorium spectrum from 250nm to 5500nm (Redman+, 2014)

    NASA Astrophysics Data System (ADS)

    Redman, S. L.; Nave, G.; Sansonetti, C. J.

    2014-04-01

    We observed the spectrum of a commercial sealed Th/Ar HCL running at 25mA for almost 15hr starting on 2011 November 2. The region of observation was limited to between 8500/cm and 28000/cm (360nm and 1200nm) by the sensitivity of the silicon photodiode detector. (5 data files).

  7. Photoresist outgassing at 157 nm exposure

    NASA Astrophysics Data System (ADS)

    Hien, Stefan; Angood, Steve; Ashworth, Dominic; Basset, Steve; Bloomstein, Theodore M.; Dean, Kim R.; Kunz, Roderick R.; Miller, Daniel A.; Patel, Shashikant; Rich, Georgia K.

    2001-08-01

    Contamination of optical elements during photoresist exposure is a serious issue in optical lithography. The outgassing of photoresist has been identified as a problem at 248nm and 193nm in production because the organic films that can be formed on an exposure lens can cause transmission loss and sever image distortion. At these exposure energies, the excitation of the photo acid generator, formation of acid, and cleavage of the protecting group are highly selective processes. At 157nm, the exposure energy is much higher (7.9 eV compared to 6.4 eV at 193nm) and it is known from laser ablation experiments that direct laser cleavage of sigma bonds occurs. The fragments formed during this irradiation can be considered as effective laser deposition precursors even in the mid ppb level. In this study, methods to quantify photoresist outgassing at 157 nm are discussed. Three criteria have been set up at International SEMATECH to protect lens contamination and to determine the severity of photoresist outgassing. First, we measured film thickness loss as a function of exposure dose for a variety of materials. In a second test we studied the molecular composition of the outgassing fragments with an exposure chamber coupled to a gas chromatograph and a mass spectrometer detector. Our third method was a deposition test of outgassing vapors on a CaF2 proof plate followed by analysis using VUV and X-ray photoelectron spectroscopies (XPS). With this technique we found deposits for many different resists. Our main focus is on F- and Si- containing resists. Both material classes form deposits especially if these atoms are bound to the polymer side chains. Whereas the F-containing films can be cleaned off under 157nm irradiation, cleaning of Si-containing films mainly produces SiO2. Our cleaning studies of plasma deposited F-containing organic films on SiO2 did not indicate damage of this surface by the possible formation of HF. Despite that we strongly recommend engineering

  8. DNA Charge Transport over 34 nm

    PubMed Central

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-01-01

    Molecular wires show promise in nanoscale electronics but the synthesis of uniform, long conductive molecules is a significant challenge. DNA of precise length, by contrast, is easily synthesized, but its conductivity has not been explored over the distances required for nanoscale devices. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation that is accessible to protein binding. Similar electron transfer rates are measured through 100-mer and 17-mer monolayers, consistent with rate-limiting electron tunneling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses most reports of molecular wires. PMID:21336329

  9. Efficient 1645-nm Er:YAG laser

    NASA Astrophysics Data System (ADS)

    Young, York E.; Setzler, Scott D.; Snell, Kevin J.; Budni, Peter A.; Pollak, Thomas M.; Chicklis, E. P.

    2004-05-01

    We report a resonantly fiber-laser-pumped Er:YAG laser operating at the eye-safe wavelength of 1645 nm, exhibiting 43% optical efficiency and 54% incident slope efficiency and emitting 7-W average power when repetitively Q switched at 10 kHz. To our knowledge, this is the best performance (conversion efficiency and average power) obtained from a bulk solid-state Q-switched erbium laser. At a 1.1-kHz pulse repetition frequency the laser produces 3.4-mJ pulses with a corresponding peak power of 162 kW. Frequency doubling to produce 822.5-nm, 4.7-kW pulses at 10 kHz was performed to demonstrate the laser's utility.

  10. Radiation Status of Sub-65 nm Electronics

    NASA Technical Reports Server (NTRS)

    Pellish, Jonathan A.

    2011-01-01

    Ultra-scaled complementary metal oxide semiconductor (CMOS) includes commercial foundry capabilities at and below the 65 nm technology node Radiation evaluations take place using standard products and test characterization vehicles (memories, logic/latch chains, etc.) NEPP focus is two-fold: (1) Conduct early radiation evaluations to ascertain viability for future NASA missions (i.e. leverage commercial technology development). (2) Uncover gaps in current testing methodologies and mechanism comprehension -- early risk mitigation.

  11. Sunlight induced 685 nm fluorescence imagery

    NASA Technical Reports Server (NTRS)

    Kim, Hongsuk H.; Van Der Piepen, Heinz

    1986-01-01

    The capability of a new fluorescence method is evaluated using data from an aircraft fluorescence experiment conducted on the Elbe River on August 10-14, 1981. The technique measures chlorophyll concentrations by monitoring sunlight-induced fluorescence at 685 nm. Upwelling radiance spectra and vertical profiles of upwelling radiances are presented and analyzed. The image-processing algorithm used to retrieve fluorescence signals from raw data is described.

  12. Laser damage database at 1064 nm

    SciTech Connect

    Rainer, F.; Gonzales, R.P.; Morgan, A.J.

    1990-03-01

    In conjunction with our diversification of laser damage testing capabilities, we have expanded upon a database of threshold measurements and parameter variations at 1064 nm. This includes all tests at low pulse-repetition frequencies (PRF) ranging from single shots to 120 Hz. These tests were conducted on the Reptile laser facility since 1987 and the Variable Pulse Laser (VPL) facility since 1988. Pulse durations ranged from 1 to 16 ns. 10 refs., 14 figs.

  13. 3 Watt CW OPO tunable 604nm to 616nm for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Henderson, Angus; Halfmann, Thomas; Mieth, Simon

    2012-06-01

    A continuous wave optical parametric oscillator (CW OPO) pumped by a fiber laser has been developed which emits up to 3 Watts of single longitudinal mode radiation tunable in the wavelength range 604nm to 616nm. The device is a modified version of the ``Argos'' Model 2400 commercial product by Lockheed Martin Aculight. A 15 Watt 1064nm fiber laser pumps a CW OPO based upon periodically-poled Lithium Niobate (PPLN). A short section of the nonlinear crystal is poled to allow efficient intracavity sum frequency generation (SFG) between the OPO pump and signal wavelengths to generate orange radiation. The device can be coarsely tuned by matching the poling periods and temperature within the nonlinear crystal to phase-match both OPO and SFG processes simultaneously. Fine mode-hop-free tuning of the orange wavelength of up to 100GHz range can be achieved by applying a voltage to a PZT which tunes the pump laser. By similar intracavity conversion schemes, the system offers the potential of providing high power at wavelengths from 600nm to 1400nm in addition to the direct signal and idler wavelength ranges from 1400nm to 4630nm. Such capability comes without the complexity and reliability issues which are inherent in dye and Ti:Sapphire systems. Details of the OPO system performance and its use in quantum optics applications will be provided.

  14. Relationship between sensitizer concentration and resist performance of chemically amplified extreme ultraviolet resists in sub-10 nm half-pitch resolution region

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2017-01-01

    The development of lithography processes with sub-10 nm resolution is challenging. Stochastic phenomena such as line width roughness (LWR) are significant problems. In this study, the feasibility of sub-10 nm fabrication using chemically amplified extreme ultraviolet resists with photodecomposable quenchers was investigated from the viewpoint of the suppression of LWR. The relationship between sensitizer concentration (the sum of acid generator and photodecomposable quencher concentrations) and resist performance was clarified, using the simulation based on the sensitization and reaction mechanisms of chemically amplified resists. For the total sensitizer concentration of 0.5 nm-3 and the effective reaction radius for the deprotection of 0.1 nm, the reachable half-pitch while maintaining 10% critical dimension (CD) LWR was 11 nm. The reachable half-pitch was 7 nm for 20% CD LWR. The increase in the effective reaction radius is required to realize the sub-10 nm fabrication with 10% CD LWR.

  15. 635nm diode laser biostimulation on cutaneous wounds

    NASA Astrophysics Data System (ADS)

    Solmaz, Hakan; Gülsoy, Murat; Ülgen, Yekta

    2014-05-01

    Biostimulation is still a controversial subject in wound healing studies. The effect of laser depends of not only laser parameters applied but also the physiological state of the target tissue. The aim of this project is to investigate the biostimulation effects of 635nm laser irradiation on the healing processes of cutaneous wounds by means of morphological and histological examinations. 3-4 months old male Wistar Albino rats weighing 330 to 350 gr were used throughout this study. Low-level laser therapy was applied through local irradiation of red light on open skin excision wounds of 5mm in diameter prepared via punch biopsy. Each animal had three identical wounds on their right dorsal part, at which two of them were irradiated with continuous diode laser of 635nm in wavelength, 30mW of power output and two different energy densities of 1 J/cm2 and 3 J/cm2. The third wound was kept as control group and had no irradiation. In order to find out the biostimulation consequences during each step of wound healing, which are inflammation, proliferation and remodeling, wound tissues removed at days 3, 7, 10 and 14 following the laser irradiation are morphologically examined and than prepared for histological examination. Fragments of skin including the margin and neighboring healthy tissue were embedded in paraffin and 6 to 9 um thick sections cut are stained with hematoxylin and eosin. Histological examinations show that 635nm laser irradiation accelerated the healing process of cutaneous wounds while considering the changes of tissue morphology, inflammatory reaction, proliferation of newly formed fibroblasts and formation and deposition of collagen fibers. The data obtained gives rise to examine the effects of two distinct power densities of low-level laser irradiation and compare both with the non-treatment groups at different stages of healing process.

  16. 75 FR 81437 - Amendment of Class E Airspace; Taos, NM

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... Taos, NM. Decommissioning of the Ski non-directional beacon (NDB) at Taos Regional Airport, Taos, NM... Taos, NM area. Decommissioning of the Ski NDB and cancellation of the NDB approach at Taos...

  17. Healing of surgical wounds made with lambda970-nm diode laser associated or not with laser phototherapy (lambda655 nm) or polarized light (lambda400-2000 nm).

    PubMed

    Medeiros, Juliana L; Nicolau, Renata A; Nicola, Ester M D; dos Santos, Jean N; Pinheiro, Antonio L B

    2010-08-01

    The aim of this study was to analyze the effect of two phototherapies, laser and polarized light, on diode laser (970lambda nm) wounds. Lasers have been used in surgery, and some wavelengths may cause thermal damage to the tissue and affect healing. Several studies have shown that some wavelengths are effective in improving healing. Coherent and noncoherent light have been successfully used on the modulation of biological phenomena of several origins. Thirty-one Wistar rats were divided into 3 groups (GI to GIII). A 20-mm x 2-mm wound was created on the dorsum of each animal with a diode laser (Sirolaser, Sirona, Bensheim, Germany). Group GI acted as control. On GII, laser light (lambda655 nm, 30 mW, phi approximately 3 mm, 12 J/cm(2)) was used and on GIII illumination with polarized light (lambda400-2000 nm, 40 mW, phi approximately 5.5 cm, 12 J/cm(2)) was used, every other day (GII) or daily (GIII) for 7 days. The animals were killed at 0, 7, and 14 days after surgery. Specimens were taken, routinely processed, stained and imunnomarked [HE (hematoxylin-eosin), sirius red, alpha-smooth muscle actin (SMA)], and underwent histological analysis. GII showed better response at day 14 when re-epithelialization was in a more advanced stage. The number of myofibroblasts was significantly different over the healing time (7 to 14 days); this number was smaller than that observed on G1. On GIII at day 7, the number of myofibroblasts was significantly higher than for GII. At day 14, a more pronounced deposition of collagen matrix was also seen, and inflammation was discrete and more advanced for GIII. The results of the present study showed that the effect of the use of laser light was more evident at early stages of healing and that the use of polarized light improved the resolution of the inflammatory reaction, increased the deposition of collagen, increased the number of myofibroblasts, and quickened re-epithelialization during the experimental time.

  18. Experimental laser interstitial thermotherapy in ex-vivo porcine tissue at 980 nm and 830 nm

    NASA Astrophysics Data System (ADS)

    Salas, Nelson, Jr.; Manns, Fabrice; Parel, Jean-Marie A.; Milne, Peter J.; Minhaj, Ahmed M.; Denham, David B.; Robinson, David S.

    2001-05-01

    The purpose of these experiments was to compare the temperature increase in ex-vivo porcine mammary chain tissue as a breast tissue model during interstitial laser irradiation with diode lasers emitting at 980 nm and 830 nm. Both wavelengths were delivered at 4.0 W for 10 minutes through a diffusing fiber inserted into ex-vivo porcine tissue. The temperature was measured with a set of 15 thermocouples placed 5, 10, and 15 mm from the fiber axis. The initial rate of temperature increase 5 mm away from the fiber tip was higher at 980 nm (0.12 to 0.20 degree(s)C/s) than at 830 nm (0.10 to 0.16 degree(s)C/s). At 10 mm and 15 mm (areas with less radiation), the rate was smaller than at 5 mm (less than 0.06 degree(s)C/s at 10 mm and less than 0.02 degree(s)C/s at 15 mm) for both wavelengths with no significant difference between the 980 nm and 830 nm radiation. The temperature increase at 5, 10 and 15 mm away from the fiber tip after 10 minutes of irradiation was higher at 980 nm (36 to 45 degree(s)C at 5 mm, 14 to 30 degree(s)C at 10 mm and 9 to 17 degree(s)C at 15 mm) than at 830 nm (27 to 33 degree(s)C at 5 mm, 11 to 17 degree(s)C at 10 mm and 8 to 9 degree(s)C at 15 mm) after 10 minutes. These results were found to be highly dependent on tissue composition (muscle vs. fatty tissue).

  19. Yb fiber amplifier at 972.5 nm with frequency quadrupling to 243.1 nm

    NASA Astrophysics Data System (ADS)

    Burkley, Z.; Rasor, C.; Cooper, S. F.; Brandt, A. D.; Yost, D. C.

    2017-01-01

    We demonstrate a continuous-wave ytterbium-doped fiber amplifier which produces 6.3 W at a wavelength of 972.5 nm. We frequency-quadruple this source in two resonant doubling stages to generate 530 mW at 243.1 nm. Radiation at this wavelength is required to excite the 1S-2S transition in atomic hydrogen and could therefore find application in experimental studies of hydrogen and anti-hydrogen.

  20. Laser-induced bulk damage of silica glass at 355nm and 266nm

    NASA Astrophysics Data System (ADS)

    Kashiwagi, R.; Aramomi, S.

    2016-12-01

    Laser processing machines using Nd:YAG 3rd harmonic wave (355 nm) and 4th harmonic wave (266 nm) have been developed and put into practical use lately. Due to this, optical elements with high laser durability to 355 nm and 266 nm are required. Silica glass is the optical element which has high UV transmission and high laser durability. Laser-induced surface damage of the silica glass has been studied in detail, but we hardly have the significant knowledge of laserinduced bulk damage. This knowledge is required in order to evaluate the silica glass itself. That is because cracks and scratches on the surface give rise to a higher possibility of damage. Therefore, we studied the laser durability of a variety of the silica glass samples by 1-on-1 and S-on-1 laser-induced bulk damage threshold (LIDT) at 355 nm and 266 nm. In this study, we gained knowledge in three areas about bulk damage to the silica glass. First, the LIDT became lower as shot counts increased. Second, the LIDT decreased as the hydroxyl content in the silica glass increased. Last, the LIDT became higher as the hydrogen concentration in the silica glass increased. Under the UV irradiation, impurities are generated and the silica glass absorbs more light. Therefore, the LIDT decreased as shot counts increased. Also, the hydroxyl in particular generates more impurities, so damage easily occurs. On the other hand, the hydrogen reacts with impurities and absorption is suppressed. Based on these results, we can improve laser durability at 355 nm and 266 nm by reducing the hydroxyl content and increasing the hydrogen concentration in the silica glass.

  1. Deep ultraviolet (254 nm) focal plane array

    NASA Astrophysics Data System (ADS)

    Cicek, Erdem; Vashaei, Zahra; McClintock, Ryan; Razeghi, Manijeh

    2011-10-01

    We report the synthesis, fabrication and testing of a 320 × 256 focal plane array (FPA) of back-illuminated, solarblind, p-i-n, AlxGa1-xN-based detectors, fully realized within our research laboratory. We implemented a novel pulsed atomic layer deposition technique for the metalorganic chemical vapor deposition (MOCVD) growth of crackfree, thick, and high Al composition AlxGa1-xN layers. Following the growth, the wafer was processed into a 320 × 256 array of 25 μm × 25 μm pixels on a 30 μm pixel-pitch and surrounding mini-arrays. A diagnostic mini-array was hybridized to a silicon fan-out chip to allow the study of electrical and optical characteristics of discrete pixels of the FPA. At a reverse bias of 1 V, an average photodetector exhibited a low dark current density of 1.12×10-8 A/cm2. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower and falling off three orders of magnitude by 285 nm. After indium bump deposition and dicing, the FPA is hybridized to a matching ISC 9809 readout integrated circuit (ROIC). By developing a novel masking technology, we significantly reduced the visible response of the ROIC and thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allowed the FPA to achieve high external quantum efficiency (EQE): at 254 nm, average pixels showed unbiased peak responsivity of 75 mA/W, which corresponds to an EQE of ~37%. Finally, the uniformity of the FPA and imaging properties are investigated.

  2. Ionospheric electron content and NmF2 from nighttime OI 135.6 nm intensity

    NASA Astrophysics Data System (ADS)

    Rajesh, P. K.; Liu, J. Y.; Hsu, M. L.; Lin, C. H.; Oyama, K. I.; Paxton, L. J.

    2011-02-01

    This paper derives the theoretical relationship between vertical integrated intensity of OI 135.6 nm oxygen emission with integrated electron content (IEC) from 150 to 800 km altitude as well as F layer peak electron density (NmF2). Local time, seasonal, and solar cycle dependence of the relationship is investigated, and it is proposed as a conversion factor to retrieve IEC and NmF2 values from airglow measurements. The errors associated with the IEC and NmF2 estimation using the derived conversion factor are demonstrated for different local times and solar activity. The theoretical conversion factor is compared with that calculated using airglow measurements by the Global Ultraviolet Imager onboard the Theremosphere, Ionosphere, Mesosphere Energetics and Dynamics mission and the Global Ionospheric Map total electron content as well as the nadir integrated OI 135.6 nm intensity by the Tiny Ionospheric Photometer and NmF2 determined from the Global Positioning System Occultation Experiment, both onboard FORMOSAT-3/COSMIC.

  3. Nonlinear absorption properties of DKDP crystal at 263 nm and 351 nm

    NASA Astrophysics Data System (ADS)

    Chai, Xiangxu; Zhu, Qihua; Feng, Bin; Li, Fuquan; Feng, Xi; Wang, Fang; Han, Wei; Wang, Liquan

    2017-02-01

    At the wavelength of 263 nm and 351 nm, the nonlinear absorption curves of 66% deuterated DKDP crystal were measured in the geometries of beam polarizing along the optics axis (E∥Z) and perpendicular to it (E⊥Z). The results indicate that the nonlinear absorption in the E⊥Z geometry is stronger than that in the E∥Z geometry. The nonlinear absorptions at 263 nm and 351 nm are identified to two- and three-photon absorption, respectively. The theoretical fits to the experimental data yields the two-photon absorption coefficients of 0.32 ± 0.03 cm/GW (E⊥Z geometry) and 0.17 ± 0.02 cm/GW (E∥Z geometry) at 263 nm, and the three-photon absorption coefficients of (8.1 ± 1.1) × 10-4 cm3/GW2 (E⊥Z geometry) and (2.2 ± 0.5) × 10-4 cm3/GW2 (E∥Z geometry) at 351 nm.

  4. Photolysis of formic acid at 355 nm

    NASA Astrophysics Data System (ADS)

    Martinez, Denhi; Bautista, Teonanacatl; Guerrero, Alfonso; Alvarez, Ignacio; Cisneros, Carmen

    2015-05-01

    Formic acid is well known as a food additive and recently an application on fuel cell technology has emerged. In this work we have studied the dissociative ionization process by multiphoton absorption of formic acid molecules at 355nm wavelength photons, using TOF spectrometry in reflectron mode (R-TOF). Some of the most abundant ionic fragments produced are studied at different settings of the laser harmonic generator. The dependence of the products on these conditions is reported. This work was supported by CONACYT Project 165410 and PAPIIT IN102613 and IN101215.

  5. 248nm silicon photoablation: Microstructuring basics

    SciTech Connect

    Poopalan, P.; Najamudin, S. H.; Wahab, Y.; Mazalan, M.

    2015-05-15

    248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.

  6. White Sands, Carrizozo Lava Beds, NM

    NASA Image and Video Library

    1982-03-30

    STS003-10-613 (22-30 March 1982) --- A truly remarkable view of White Sands and the nearby Carrizozo Lava Beds in southeast NM (33.5N, 106.5W). White Sands, site of the WW II atomic bomb development and testing facility and later post war nuclear weapons testing that can still be seen in the cleared circular patterns on the ground. Space shuttle Columbia (STS-3), this mission, landed at the White Sands alternate landing site because of bad weather at Edwards AFB, CA. Photo credit: NASA

  7. 248nm silicon photoablation: Microstructuring basics

    NASA Astrophysics Data System (ADS)

    Poopalan, P.; Najamudin, S. H.; Wahab, Y.; Mazalan, M.

    2015-05-01

    248nm pulses from a KrF excimer laser was used to ablate a Si wafer in order to ascertain the laser pulse and energy effects for use as a microstructuring tool for MEMS fabrication. The laser pulses were varied between two different energy levels of 8mJ and 4mJ while the number of pulses for ablation was varied. The corresponding ablated depths were found to range between 11 µm and 49 µm, depending on the demagnified beam fluence.

  8. Low-intensity LED (625 and 405 nm) and laser (805 nm) killing of Propionibacterium acnes and Staphylococcus epidermidis

    NASA Astrophysics Data System (ADS)

    Tuchina, Elena S.; Tuchin, Valery V.

    2009-02-01

    In the present work we have investigated in vitro sensitivity of microorganisms P. acnes and S. epidermidis to action of red (625 nm and 405 nm) and infrared (805 nm) radiations in combination with photosensitizes Methylene Blue and Indocyanine Green.

  9. SITS Derivatization of Peptides to Enhance 266 nm Ultraviolet Photodissociation (UVPD)

    NASA Astrophysics Data System (ADS)

    Quick, M. Montana; Mehaffey, M. Rachel; Johns, Robert W.; Parker, W. Ryan; Brodbelt, Jennifer S.

    2017-07-01

    N-terminal derivatization of peptides with the chromogenic reagent 4-acetamido-4-isothiocyanatostilbene-2,2-disulfonic acid (SITS) is demonstrated to enhance the efficiency of 266 nm ultraviolet photodissociation (UVPD). Attachment of the chromophore results in a mass shift of 454 Da and provides significant gains in the number and abundances of diagnostic fragment ions upon UVPD. Activation of SITS-tagged peptides with 266 nm UVPD leads to many fragment ions akin to the a/b/y ions commonly produced by CID, along with other sequence ions ( c, x, and z) typically accessed through higher energy pathways. Extreme bias towards C-terminal fragment ions is observed upon activation of SITS-tagged peptides using multiple 266 nm laser pulses. Due to the high reaction efficiency of the isothiocyanate coupling to the N-terminus of peptides, we demonstrate the ability to adapt this strategy to a high-throughput LC-MS/MS workflow with 266 nm UVPD.

  10. SITS Derivatization of Peptides to Enhance 266 nm Ultraviolet Photodissociation (UVPD)

    NASA Astrophysics Data System (ADS)

    Quick, M. Montana; Mehaffey, M. Rachel; Johns, Robert W.; Parker, W. Ryan; Brodbelt, Jennifer S.

    2017-03-01

    N-terminal derivatization of peptides with the chromogenic reagent 4-acetamido-4-isothiocyanatostilbene-2,2-disulfonic acid (SITS) is demonstrated to enhance the efficiency of 266 nm ultraviolet photodissociation (UVPD). Attachment of the chromophore results in a mass shift of 454 Da and provides significant gains in the number and abundances of diagnostic fragment ions upon UVPD. Activation of SITS-tagged peptides with 266 nm UVPD leads to many fragment ions akin to the a/b/y ions commonly produced by CID, along with other sequence ions (c, x, and z) typically accessed through higher energy pathways. Extreme bias towards C-terminal fragment ions is observed upon activation of SITS-tagged peptides using multiple 266 nm laser pulses. Due to the high reaction efficiency of the isothiocyanate coupling to the N-terminus of peptides, we demonstrate the ability to adapt this strategy to a high-throughput LC-MS/MS workflow with 266 nm UVPD.

  11. Electrically-pumped 850-nm micromirror VECSELs.

    SciTech Connect

    Geib, Kent Martin; Peake, Gregory Merwin; Serkland, Darwin Keith; Keeler, Gordon Arthur; Mar, Alan

    2005-02-01

    Vertical-external-cavity surface-emitting lasers (VECSELs) combine high optical power and good beam quality in a device with surface-normal output. In this paper, we describe the design and operating characteristics of an electrically-pumped VECSEL that employs a wafer-scale fabrication process and operates at 850 nm. A curved micromirror output coupler is heterogeneously integrated with AlGaAs-based semiconductor material to form a compact and robust device. The structure relies on flip-chip bonding the processed epitaxial material to an aluminum nitride mount; this heatsink both dissipates thermal energy and permits high frequency modulation using coplanar traces that lead to the VECSEL mesa. Backside emission is employed, and laser operation at 850 nm is made possible by removing the entire GaAs substrate through selective wet etching. While substrate removal eliminates absorptive losses, it simultaneously compromises laser performance by increasing series resistance and degrading the spatial uniformity of current injection. Several aspects of the VECSEL design help to mitigate these issues, including the use of a novel current-spreading n type distributed Bragg reflector (DBR). Additionally, VECSEL performance is improved through the use of a p-type DBR that is modified for low thermal resistance.

  12. DNA charge transport over 34 nm

    NASA Astrophysics Data System (ADS)

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-03-01

    Molecular wires show promise in nanoscale electronics, but the synthesis of uniform, long conductive molecules is a significant challenge. Deoxyribonucleic acid (DNA) of precise length, by contrast, is synthesized easily, but its conductivity over the distances required for nanoscale devices has not been explored. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base-pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation accessible to protein binding. Similar electron-transfer rates measured through 100-mer and 17-mer monolayers are consistent with rate-limiting electron tunnelling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses that of most reports of molecular wires.

  13. TCSPC FLIM in the wavelength range from 800 nm to 1700 nm (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Becker, Wolfgang; Shcheslavsky, Vladislav

    2016-03-01

    Excitation and detection in the wavelength range above 800nm is a convenient and relatively inexpensive way to increase the penetration depth in optical microscopy. Moreover, detection at long wavelength avoids the problem that tissue autofluorescence contaminates the signals from endogenous fluorescence probes. FLIM at NIR wavelength may therefore be complementary to multiphoton microscopy, especially if the lifetimes of NIR fluorophores report biological parameters of the tissue structures they are bound to. Unfortunately, neither the excitation sources nor the detectors of standard confocal and multiphoton laser scanning systems are directly suitable for excitation and detection of NIR fluorescence. Most of these problems can be solved, however, by using ps diode lasers or Ti:Sapphire lasers at their fundamental wavelength, and NIR-sensitive detectors. With NIR-sensitive PMTs the detection wavelength range can be extended up to 900 nm, with InGaAs SPAD detectors up to 1700 nm. Here, we demonstrate the use of a combination of laser scanning, multi-dimensional TCSPC, and advanced excitation sources and detectors for FLIM at up to 1700 nm. The performance was tested at tissue samples incubated with NIR dyes. The fluorescence lifetimes generally get shorter with increasing absorption and emission wavelengths of the dyes. For the cyanine dye IR1061, absorbing around 1060 nm, the lifetime was found to be as short as 70 ps. Nevertheless the fluorescence decay could still be clearly detected. Almost all dyes showed clear lifetime changes depending on the binding to different tissue constituents.

  14. Comparison of 980-nm and 1070-nm in endovenous laser treatment (EVLT)

    NASA Astrophysics Data System (ADS)

    Topaloglu, Nermin; Tabakoglu, Ozgur; Ergenoglu, Mehmet U.; Gülsoy, Murat

    2009-07-01

    The use of endovenous laser treatment for varicose veins has been increasing in recent years. It is a safer technique than surgical vein stripping. Its complications (e.g. bruising, pain) are less than the complications of surgical vein stripping. But best parameters such as optimum wavelength, power, and application duration are still under investigation to clarify uncertainties about this technique. To prevent its complications and improve its clinical outcomes, the exact mechanism of it has to be known. The aim of this study is to investigate the effect of different laser wavelengths on endovenous laser therapy. In this study 980-nm diode laser and 1070-nm fiber laser were used. Human veins were irradiated with 980-nm and 1070-nm lasers at 8 W and 10 W to find the optimal power and wavelength. After laser application, remarkable shrinkage was observed. Inner and outer diameters of the veins also narrowed for both of the laser types. 10 W of 980-nm laser application led to better shrinkage results.

  15. Dual illumination OCT at 1050nm and 840nm for whole eye segment imaging

    NASA Astrophysics Data System (ADS)

    Fan, Shanhui; Qin, Lin; Dai, Cuixia; Zhou, Chuanqing

    2014-11-01

    We presented an improved dual channel dual focus spectral domain optical coherence tomography (SD-OCT) with two illuminations at 840 nm and 1050 nm for whole eye segment imaging and biometry in vivo. The two light beams were coupled and optically optimized to scan the anterior and posterior segment of the eye simultaneously. This configuration with dichroic mirrors integrated in the sample arm enables us to acquire images from the anterior segment and retina effectively with minimum loss of sample signal. In addition, the full resolved complex (FRC) method was applied to double the imaging depth for the whole anterior segment imaging by eliminating the mirror image. The axial resolution for 1050 nm and 840 nm OCT was 14 μm and 8 μm in air, respectively. Finally, the system was successfully tested in imaging the unaccommodated and accommodated eyes. The preliminary results demonstrated the significant improvements comparing with our previous dual channel SD-OCT configuration in which the two probing beams had the same central wavelength of 840 nm.

  16. Constraints, histones, and the 30-nm spiral

    NASA Astrophysics Data System (ADS)

    Zandi, Roya; Rudnick, Joseph

    2001-11-01

    We investigate the mechanical stability of a segment of DNA wrapped around a histone in the nucleosome configuration, under the assumption that the proper model for this packaging arrangement is that of an elastic rod that is free to twist and that writhes subject to mechanical constraints. We find that the number of constraints required to stabilize the nuclesome configuration is determined by the length of the segment, the number of times the DNA wraps around the histone spool, and the specific constraints utilized. While it can be shown that four constraints suffice, in principle, to insure stability of the nucleosome, a proper choice must be made to guarantee the effectiveness of this minimal number. The optimal choice of constraints appears to bear a relation to the existence of a spiral ridge on the surface of the histone octamer. The particular configuration that we investigate is related to the 30-nm spiral, a higher-order organization of DNA in chromatin.

  17. 308-nm excimer laser in endodontics

    NASA Astrophysics Data System (ADS)

    Liesenhoff, Tim

    1992-06-01

    Root canal preparation was performed on 20 extracted human teeth. After opening the coronal pulp, the root canals were prepared by 308 nm excimer laser only. All root canals were investigated under SEM after separation in the axial direction. By sagittal separation of the mandibles of freshly slaughtered cows, it was possible to get access to the tissues and irradiate under optical control. Under irradiation of excimer laser light, tissue starts to fluoresce. It was possible to demonstrate that each tissue (dentin, enamel, bone, pulpal, and connective tissue) has a characteristic spectral pattern. The SEM analyses showed that it is well possible to prepare root canals safely. All organic soft tissue has been removed by excimer laser irradiation. There was no case of via falsa. The simultaneous spectroscopic identification of the irradiated tissue provides a safe protection from overinstrumentation. First clinical trials on 20 patients suffering of chronical apical parodontitis have been carried out successfully.

  18. Microscope illumination systems for 157 nm

    NASA Astrophysics Data System (ADS)

    Pesch, Alexander; Uhlendorf, Kristina; Deparnay, Arnaud; Erdmann, Lars; Kuschnerus, Peter; Engel, Thomas; Brunner, Robert

    2003-05-01

    The image quality of an inspection microscope depends strongly on the performance of the illumination system. Especially in the case of laser-based illumination it is necessary to transform the original beam profile into a homogeneous light spot with a flat top field distribution. Simultaneously, speckles caused by the coherence of the laser have to be reduced. Here we discuss different ways to homogenize the multi mode beam profile of a pulsed compact 157 nm excimer laser. A variety of setups, combining dynamic acting diffusers, microlens arrays and primary lenses were realized and characterized in several geometrical arrangements. The homogenizers were evaluated and characterized especially with respect to the statistical behavior on the integrated pulse number.

  19. Optical absorption of silicon nitride membranes at 1064 nm and at 1550 nm

    NASA Astrophysics Data System (ADS)

    Steinlechner, Jessica; Krüger, Christoph; Martin, Iain W.; Bell, Angus; Hough, Jim; Kaufer, Henning; Rowan, Sheila; Schnabel, Roman; Steinlechner, Sebastian

    2017-07-01

    Because of a low mechanical loss, thin films made of silicon nitride (Si3N4 ) are interesting for fundamental research and development in the field of gravitational-wave detection. Si3N4 membranes allow for the characterization of quantum radiation pressure noise (RPN), which will be a limiting noise source in gravitational-wave detectors of the second and third generations. Furthermore, Si3N4 is an interesting material for possible thermal noise reduction in highly reflective mirror coatings. For both applications, the optical absorption of Si3N4 needs to be low. This paper presents absorption measurements on low-stress Si3N4 membranes showing an absorption a factor of 7 lower at 1550 nm than at 1064 nm resulting in an estimated 2 times higher sensitivity in RPN experiments at the higher wavelength and making Si3N4 an interesting material for highly reflective multimaterial mirror coatings at 1550 nm.

  20. Measurement of 100 nm and 60 nm Particle Standards by Differential Mobility Analysis

    PubMed Central

    Mulholland, George W.; Donnelly, Michelle K.; Hagwood, Charles R.; Kukuck, Scott R.; Hackley, Vincent A.; Pui, David Y. H.

    2006-01-01

    The peak particle size and expanded uncertainties (95 % confidence interval) for two new particle calibration standards are measured as 101.8 nm ± 1.1 nm and 60.39 nm ± 0.63 nm. The particle samples are polystyrene spheres suspended in filtered, deionized water at a mass fraction of about 0.5 %. The size distribution measurements of aerosolized particles are made using a differential mobility analyzer (DMA) system calibrated using SRM® 1963 (100.7 nm polystyrene spheres). An electrospray aerosol generator was used for generating the 60 nm aerosol to almost eliminate the generation of multiply charged dimers and trimers and to minimize the effect of non-volatile contaminants increasing the particle size. The testing for the homogeneity of the samples and for the presence of multimers using dynamic light scattering is described. The use of the transfer function integral in the calibration of the DMA is shown to reduce the uncertainty in the measurement of the peak particle size compared to the approach based on the peak in the concentration vs. voltage distribution. A modified aerosol/sheath inlet, recirculating sheath flow, a high ratio of sheath flow to the aerosol flow, and accurate pressure, temperature, and voltage measurements have increased the resolution and accuracy of the measurements. A significant consideration in the uncertainty analysis was the correlation between the slip correction of the calibration particle and the measured particle. Including the correlation reduced the expanded uncertainty from approximately 1.8 % of the particle size to about 1.0 %. The effect of non-volatile contaminants in the polystyrene suspensions on the peak particle size and the uncertainty in the size is determined. The full size distributions for both the 60 nm and 100 nm spheres are tabulated and selected mean sizes including the number mean diameter and the dynamic light scattering mean diameter are computed. The use of these particles for calibrating DMAs and for

  1. Mutation of the nm23-H1 gene has a non-dominant role in colorectal adenocarcinoma

    PubMed Central

    JIN, YUELING; DAI, ZHENSHENG

    2016-01-01

    Nm23-H1 is a metastasis suppressor gene, which is has a reduced expression in patients with digestive system cancer. However, the mechanistic basis for the genetic instability remains unknown. To study the expression of the nm23-H1 gene in patients with colorectal cancer, polymerase chain reaction-single strand conformation polymorphism was used to analyze any point mutation, and immunohistochemistry was used to detect the expression of nm23-H1. Results revealed that all 63 specimens of Chinese human colorectal cancer tissues exhibit no point mutation. Among those 63 specimens, 19 (30%) exhibited positive immunostaining for the nm23-H1 protein and 44 (70%) exhibited negative immunostaining. These observations suggested that the protein and gene expression levels of nm23-H1 are reduced in colorectal cancer compared with the adjacent normal tissues, and the point mutation in the nm23-H1 gene is not the dominant cause of metastatic colorectal cancer. PMID:27330777

  2. Characterization of LANDSAT Panels Using the NIST BRDF Scale from 1100 nm to 2500 nm

    NASA Technical Reports Server (NTRS)

    Markham, Brian; Tsai, Benjamin K.; Allen, David W.; Cooksey, Catherine; Yoon, Howard; Hanssen, Leonard; Zeng, Jinan; Fulton, Linda; Biggar, Stuart; Markham, Brian

    2010-01-01

    Many earth observing sensors depend on white diffuse reflectance standards to derive scales of radiance traceable to the St Despite the large number of Earth observing sensors that operate in the reflective solar region of the spectrum, there has been no direct method to provide NIST traceable BRDF measurements out to 2500 rim. Recent developments in detector technology have allowed the NIST reflectance measurement facility to expand the operating range to cover the 250 nm to 2500 nm range. The facility has been modified with and additional detector using a cooled extended range indium gallium arsenide (Extended InGaAs) detector. Measurements were made for two PTFE white diffuse reflectance standards over the 1100 nm to 2500 nm region at a 0' incident and 45' observation angle. These two panels will be used to support the OLI calibration activities. An independent means of verification was established using a NIST radiance transfer facility based on spectral irradiance, radiance standards and a diffuse reflectance plaque. An analysis on the results and associated uncertainties will be discussed.

  3. Characterization of LANDSAT Panels Using the NIST BRDF Scale from 1100 nm to 2500 nm

    NASA Technical Reports Server (NTRS)

    Markham, Brian; Tsai, Benjamin K.; Allen, David W.; Cooksey, Catherine; Yoon, Howard; Hanssen, Leonard; Zeng, Jinan; Fulton, Linda; Biggar, Stuart; Markham, Brian

    2010-01-01

    Many earth observing sensors depend on white diffuse reflectance standards to derive scales of radiance traceable to the St Despite the large number of Earth observing sensors that operate in the reflective solar region of the spectrum, there has been no direct method to provide NIST traceable BRDF measurements out to 2500 rim. Recent developments in detector technology have allowed the NIST reflectance measurement facility to expand the operating range to cover the 250 nm to 2500 nm range. The facility has been modified with and additional detector using a cooled extended range indium gallium arsenide (Extended InGaAs) detector. Measurements were made for two PTFE white diffuse reflectance standards over the 1100 nm to 2500 nm region at a 0' incident and 45' observation angle. These two panels will be used to support the OLI calibration activities. An independent means of verification was established using a NIST radiance transfer facility based on spectral irradiance, radiance standards and a diffuse reflectance plaque. An analysis on the results and associated uncertainties will be discussed.

  4. Evaluation of the Diode laser (810nm,980nm) on dentin tubule diameter following internal bleaching

    PubMed Central

    Kiomarsi, Nazanin; Salim, Soheil; Sarraf, Pegah; Javad-Kharazifard, Mohammad

    2016-01-01

    Background The aim of this study was to evaluate the effect of diode laser irradiation and bleaching materials on the dentinal tubule diameter after laser bleaching. Material and Methods The dentin discs of 40 extracted third molar were used in this experiment. Each disc surface was divided into two halves by grooving. Half of samples were laser bleached at different wavelengths with two different concentrations of hydrogen peroxide. Other half of each disc with no laser bleaching remained as a negative control. Dentin discs were assigned randomly into four groups (n=10) with following hydrogen peroxide and diode laser wavelength specifications; Group 1 (30% - 810 nm), group 2 (30% - 980 nm), group 3 (46% - 810 nm) and group 4 (46% - 980 nm). All specimens were sent for scanning electron microscopic (SEM) analysis in order to measure tubular diameter in laser treated and control halves. Data were analyzed by ANOVA and Tukey test (p<0.05). Results A significant reduction in dentin tubule diameter was observed in groups 1, 2 and 4. There was no significant difference between groups 1 and 2 and between groups 3 and 4 after bleaching. Conclusions The SEM results showed that diode laser was able to reduce dentin tubule diameter and its effect on dentin was dependent on chemical action of bleaching material. Key words:Laser, diode, dentin, tubule, diameter. PMID:27398172

  5. NXT:1980Di immersion scanner for 7nm and 5nm production nodes

    NASA Astrophysics Data System (ADS)

    de Graaf, Roelof; Weichselbaum, Stefan; Droste, Richard; McLaren, Matthew; Koek, Bert; de Boeij, Wim

    2016-03-01

    Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirements keep progressively scaling down and consequently require system improvements in immersion scanners. The on-product-overlay requirements are approaching levels of only a few nanometers, imposing stringent requirements on the scanner tool design in terms of reproducibility, accuracy and stability. In this paper we report on the performance of the NXT:1980Di immersion scanner. The NXT:1980Di builds upon the NXT:1970Ci, that is widely used for 16nm, 14nm and 10nm high-volume manufacturing. We will discuss the NXT:1980Di system- and sub-system/module enhancements that drive the scanner overlay, focus and productivity performance. Overlay, imaging, focus, productivity and defectivity data will be presented for multiple tools. To further reduce the on-product overlay system performance, alignment sensor contrast improvements as well as active reticle temperature conditioning are implemented on the NXT:1980Di. Reticle temperature conditioning will reduce reticle heating overlay and the higher contrast alignment sensor will improve alignment robustness for processed alignment targets. Due to an increased usage of multiple patterning techniques, an increased number of immersion exposures is required. NXT:1980Di scanner design modifications raised productivity levels from 250wph to 275wph. This productivity enhancement provides lower cost of ownership (CoO) for customers using immersion technology.

  6. Optical constants determination of neodymium and gadolinium in the 3-nm to 100-nm wavelength range

    NASA Astrophysics Data System (ADS)

    Kjornrattanawanich, B.; Windt, D. L.; Uspenskii, Y. A.; Seely, J. F.

    2006-08-01

    The optical constants (n, k) of the wavelength-dependent index of refraction N = n+ik = 1-δ+ik of Nd (Neodymium) and Gd (Gadolinium) are determined in the wavelength range of 3 nm to 100 nm by the transmittance method using synchrotron radiation. Nd and Gd films with thicknesses ranging from 5 nm to 180 nm were fabricated on Si photodiodes (which served as the coating substrates as well as the detectors) and capped with Si layers to protect these reactive rare earth elements from oxidation. The imaginary part (k) obtained directly from the transmittance measurement is used in the derivation of the real part (δ) of the complex index of refraction N through the Kramers- Kronig integral. The measured optical constants are used in the design of currently developed Nd- and Gd-based multilayers for solar imaging applications. Our results on Nd and Gd optical constants and the reflectance of some Nd- and Gd-based multilayers are presented.

  7. The Spectrum of Thorium from 250 nm to 5500 nm: Ritz Wavelengths and Optimized Energy Levels

    NASA Astrophysics Data System (ADS)

    Redman, Stephen L.; Nave, Gillian; Sansonetti, Craig J.

    2014-03-01

    We have made precise observations of a thorium-argon hollow cathode lamp emission spectrum in the region between 350 nm and 1175 nm using a high-resolution Fourier transform spectrometer. Our measurements are combined with results from seven previously published thorium line lists to re-optimize the energy levels of neutral, singly, and doubly ionized thorium (Th I, Th II, and Th III). Using the optimized level values, we calculate accurate Ritz wavelengths for 19, 874 thorium lines between 250 nm and 5500 nm (40, 000 cm-1 to 1800 cm-1). We have also found 102 new thorium energy levels. A systematic analysis of previous measurements in light of our new results allows us to identify and propose corrections for systematic errors in Palmer & Engleman and typographical errors and incorrect classifications in Kerber et al. We also found a large scatter with respect to the thorium line list of Lovis & Pepe. We anticipate that our Ritz wavelengths will lead to improved measurement accuracy for current and future spectrographs that make use of thorium-argon or thorium-neon lamps as calibration standards.

  8. Photodissociation of the Propargyl (C3D3) Radicals at 248 nm and 193 nm

    SciTech Connect

    Neumark., D.M.; Crider, P.E.; Castiglioni, L.; Kautzman, K.K.

    2009-01-21

    The photodissociation of perdeuterated propargyl (D{sub 2}CCCD) and propynyl (D{sub 3}CCC) radicals was investigated using fast beam photofragment translational spectroscopy. Radicals were produced from their respective anions by photodetachment at 540 nm and 450 nm (below and above the electron affinity of propynyl). The radicals were then photodissociated by 248 nm or 193 nm light. The recoiling photofragments were detected in coincidence with a time- and position-sensitive detector. Three channels were observed: D{sub 2} loss, CD + C{sub 2}D{sub 2}, and CD{sub 3} + C{sub 2}. Obervation of the D loss channel was incompatible with this experiment and was not attempted. Our translational energy distributions for D{sub 2} loss peaked at nonzero translational energy, consistent with ground state dissociation over small (< 1 eV) exit barriers with respect to separated products. Translational energy distributions for the two heavy channels peaked near zero kinetic energy, indicating dissociation on the ground state in the absence of exit barriers.

  9. THE SPECTRUM OF THORIUM FROM 250 nm TO 5500 nm: RITZ WAVELENGTHS AND OPTIMIZED ENERGY LEVELS

    SciTech Connect

    Redman, Stephen L.; Nave, Gillian; Sansonetti, Craig J.

    2014-03-01

    We have made precise observations of a thorium-argon hollow cathode lamp emission spectrum in the region between 350 nm and 1175 nm using a high-resolution Fourier transform spectrometer. Our measurements are combined with results from seven previously published thorium line lists to re-optimize the energy levels of neutral, singly, and doubly ionized thorium (Th I, Th II, and Th III). Using the optimized level values, we calculate accurate Ritz wavelengths for 19, 874 thorium lines between 250 nm and 5500 nm (40, 000 cm{sup –1} to 1800 cm{sup –1}). We have also found 102 new thorium energy levels. A systematic analysis of previous measurements in light of our new results allows us to identify and propose corrections for systematic errors in Palmer and Engleman and typographical errors and incorrect classifications in Kerber et al. We also found a large scatter with respect to the thorium line list of Lovis and Pepe. We anticipate that our Ritz wavelengths will lead to improved measurement accuracy for current and future spectrographs that make use of thorium-argon or thorium-neon lamps as calibration standards.

  10. Maximum imaging depth comparison in porcine vocal folds using 776-nm vs. 1552-nm excitation wavelengths

    NASA Astrophysics Data System (ADS)

    Yildirim, Murat; Ferhanoglu, Onur; Kobler, James B.; Zeitels, Steven M.; Ben-Yakar, Adela

    2013-02-01

    Vocal fold scarring is one of the major causes of voice disorders and may arise from overuse or post-surgical wound healing. One promising treatment utilizes the injection of soft biomaterials aimed at restoring viscoelasticity of the outermost vibratory layer of the vocal fold, superficial lamina propria (SLP). However, the density of the tissue and the required injection pressure impair proper localization of the injected biomaterial in SLP. To enhance treatment effectiveness, we are investigating a technique to image and ablate sub-epithelial planar voids in vocal folds using ultrafast laser pulses to better localize the injected biomaterial. It is challenging to optimize the excitation wavelength to perform imaging and ablation at depths suitable for clinical use. Here, we compare maximum imaging depth using two photon autofluorescence and second harmonic generation with third-harmonic generation imaging modalities for healthy porcine vocal folds. We used a home-built inverted nonlinear scanning microscope together with a high repetition rate (2 MHz) ultrafast fiber laser (Raydiance Inc.). We acquired both two-photon autofluorescence and second harmonic generation signals using 776 nm wavelength and third harmonic generation signals using 1552 nm excitation wavelength. We observed that maximum imaging depth with 776 nm wavelength is significantly improved from 114 μm to 205 μm when third harmonic generation is employed using 1552 nm wavelength, without any observable damage in the tissue.

  11. Absorption coefficients for water vapor at 193 nm from 300 to 1073 K

    NASA Technical Reports Server (NTRS)

    Kessler, W. J.; Carleton, K. L.; Marinelli, W. J.

    1993-01-01

    Measurements of the water absorption coefficient at 193 nm from 300 to 1073 K are reported. The measurements were made using broadband VUV radiation and a monochromator-based detection system. The water vapor was generated by a saturator and metered into a flowing, 99 cm absorption cell via a water vapor mass flow meter. The 193 nm absorption coefficient measurements are compared to room temperature and high temperature shock tube measurements with good agreement. The absorption can be parameterized by a nu3 vibrational mode reaction coordinate and the thermal population of the nu3 mode.

  12. Absorption coefficients for water vapor at 193 nm from 300 to 1073 K

    NASA Technical Reports Server (NTRS)

    Kessler, W. J.; Carleton, K. L.; Marinelli, W. J.

    1993-01-01

    Measurements of the water absorption coefficient at 193 nm from 300 to 1073 K are reported. The measurements were made using broadband VUV radiation and a monochromator-based detection system. The water vapor was generated by a saturator and metered into a flowing, 99 cm absorption cell via a water vapor mass flow meter. The 193 nm absorption coefficient measurements are compared to room temperature and high temperature shock tube measurements with good agreement. The absorption can be parameterized by a nu3 vibrational mode reaction coordinate and the thermal population of the nu3 mode.

  13. Faster qualification of 193-nm resists for 100-nm development using photo cell monitoring

    NASA Astrophysics Data System (ADS)

    Jones, Chris M.; Kallingal, Chidam; Zawadzki, Mary T.; Jeewakhan, Nazneen N.; Kaviani, Nazila N.; Krishnan, Prakash; Klaum, Arthur D.; Van Ess, Joel

    2003-05-01

    The development of 100-nm design rule technologies is currently taking place in many R&D facilities across the world. For some critical alyers, the transition to 193-nm resist technology has been required to meet this leading edge design rule. As with previous technology node transitions, the materials and processes available are undergoing changes and improvements as vendors encounter and solve problems. The initial implementation of the 193-nm resits process did not meet the photolithography requirements of some IC manufacturers due to very high Post Exposure Bake temperature sensitivity and consequently high wafer to wafer CD variation. The photoresist vendors have been working to improve the performance of the 193-nm resists to meet their customer's requirements. Characterization of these new resists needs to be carried out prior to implementation in the R&D line. Initial results on the second-generation resists evaluated at Cypress Semicondcutor showed better CD control compared to the aelrier resist with comparable Depth of Focus (DOF), Exposure Latitute, Etch Resistance, etc. In addition to the standard lithography parameters, resist characterization needs to include defect density studies. It was found that the new resists process with the best CD control, resulted in the introduction of orders of magnitude higher yield limiting defects at Gate, Contact adn Local Interconnect. The defect data were shared with the resists vendor and within days of the discovery the resist vendor was able to pinpoint the source of the problem. The fix was confirmed and the new resists were successfully released to production. By including defect monitoring into the resist qualification process, Cypress Semiconductor was able to 1) drive correction actions earlier resulting in faster ramp and 2) eliminate potential yield loss. We will discuss in this paper how to apply the Micro Photo Cell Monitoring methodology for defect monitoring in the photolithogprhay module and the

  14. Maskless plasmonic lithography at 22 nm resolution.

    PubMed

    Pan, Liang; Park, Yongshik; Xiong, Yi; Ulin-Avila, Erick; Wang, Yuan; Zeng, Li; Xiong, Shaomin; Rho, Junsuk; Sun, Cheng; Bogy, David B; Zhang, Xiang

    2011-01-01

    Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, this approach has a trade-off between resolution and energy efficiency that arises from the substantial momentum mismatch. Here we report a novel multi-stage scheme that is capable of efficiently compressing the optical energy at deep sub-wavelength scales through the progressive coupling of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). Combining this with airbearing surface technology, we demonstrate a plasmonic lithography with 22 nm half-pitch resolution at scanning speeds up to 10 m/s. This low-cost scheme has the potential of higher throughput than current photolithography, and it opens a new approach towards the next generation semiconductor manufacturing.

  15. System design of a 157-nm scanner

    NASA Astrophysics Data System (ADS)

    Nogawa, Hideki; Hata, Hideo; Kohno, Michio

    2002-07-01

    Two key technologies of 157nm exposure tools are projection optics and the environment control with highly purified gasses. For the projection optics, the NA is required to be extremely high even from the beginning to meet the accelerated ITRS roadmap, while compensating for the chromatic aberration issues with a line selected laser. In addition, the NIST has raised an issue of intrinsic birefi-ingence with the CaF2 materials, which has serious effects on the image quality if left uncorrected. We have found answers to suppress the intrinsic birefringence effects in the practical sense for the newly designed high NA system. One solution is to optimize the combination of the rotational positions of [1 11] crystals used for the projection optics, and to combine some [100] crystals with [1 11] crystals. Looking at the environmental control issue, there are two points. One is the purging of the constantly-sealed projection optics. We have experimented on the components in the projection optics, and have achieved the purging target for them. The second point is the purging around the reticle and the wafer both of which are continually carried in and out. We have got a practical solution, partial purge system, through simulations and basic experiments using a mock-up. The partial purge mechanism is effective in keeping the environment at high purity, capable of assuring the target purging level. It can also solve the problem of lens contamination due to outgas from the resist.

  16. Wettability control of a polymer surface through 126 nm vacuum ultraviolet light irradiation

    NASA Astrophysics Data System (ADS)

    Hozumi, Atsushi; Shirahata, Naoto; Nakanishi, Youichiro; Asakura, Shuuichi; Fuwa, Akio

    2004-07-01

    The control of the surface wettability of poly (methyl methacrylate) (PMMA) substrates has been successfully demonstrated using an Ar2* excimer lamp radiating 126 nm vacuum ultraviolet (VUV) light. Each of the samples was exposed to 126 nm VUV light in air over the pressure range of 2×10-4-105 Pa. Although at the process pressures of 10, 103, and 105 Pa, the PMMA surfaces became relatively hydrophilic, the degree of hydrophilicity depended markedly on the pressure. The minimum water contact angles of the samples treated at 10, 103, and 105 Pa were about 50°, 33°, and 64°, respectively. These values were larger than those of PMMA substrates hydrophilized through 172 nm VUV irradiation conducted under the same conditions. On the other hand, after 126 nm VUV irradiation conducted under the high vacuum condition of 2×10-4 Pa, the PMMA substrate surface became carbon-rich, probably due to preferential cross-linking reactions, as evidenced by x-ray photoelectron spectroscopy. This surface was hydrophobic, showing a water contact angle of about 101°. Although the 126 nm VUV-irradiated surfaces appeared relatively smooth when observed by atomic force microscope, very small particles with diameters of 30-60 nm, which probably originated from the readhesion of photodecomposed products, existed on all of the sample surfaces. .

  17. Effects of 420-nm intense pulsed light in an acne animal model.

    PubMed

    Fan, X; Xing, Y-Z; Liu, L-H; Liu, C; Wang, D-D; Yang, R-Y; Lapidoth, M

    2013-09-01

    Blue light in the 400-420 nm range has been shown to reduce the levels of Propionibacterium acnes (P. acnes) in the skin. P. acnes has been postulated to be a critical trigger for inflammatory acne. Thus, treatment with 420 nm-intense pulsed light should reduce inflammatory activity in acne. To evaluate the clinical and histological effects of 420 nm-intense pulsed light treatment on acne in animal model. Inflammation acne animal model was constructed by intradermal injection of P. acnes of rat auricular. Levels of tumour necrosis factor alpha (TNF-α) and matrix metalloproteinase 2 (MMP-2), markers of inflammation implicated in acne, were assessed in treated and untreated animals by immunohistochemistry and quantitative polymerase chain reaction (PCR). Treatment with 420 nm intense pulsed light led to marked improvement after 6 biweekly treatments. Immunohistochemistry and PCR showed that TNF-α and MMP-2 levels correlated with the extent of acneiform activity and were reduced by treatment with 420 nm light. A 420-nm intense pulsed light may exert its beneficial effects on inflammatory acne by reducing the levels of P. acnes and secondarily reducing inflammation induced by the bacteria. © 2012 The Authors. Journal of the European Academy of Dermatology and Venereology © 2012 European Academy of Dermatology and Venereology.

  18. A 15 W 1152 nm Raman fiber laser with 6 nm spectral width for Ho3+-doped crystal's pumping source

    NASA Astrophysics Data System (ADS)

    Chen, Xiuyan; Jiang, Huawei

    2016-12-01

    A 11.5 W 1152 nm Raman fiber laser with 6 nm spectral width was demonstrated based on the resonator constructed with one fiber loop mirror and one fiber Bragg grating. By mans of experimental measurement and theoretical calculation, the reflectivity of the fiber loop mirror was confirmed as 0.93. The Yb3+-doped 1090 nm fiber length was about 5 m. When the maximum pumping power of 976 nm laser was 54.8 W, 32.2 W 1090 nm laser was obtained and the optical to optical conversion efficiency from 1090 nm to 1152 nm light was 48%. Finally, the 1152 nm Raman fiber laser was used for pumping Ho3+:LLF crystal, and the 1194 nm fluorescence emission peak was detected for the first time.

  19. Investigations of a dual seeded 1178nm Raman laser system

    NASA Astrophysics Data System (ADS)

    Block, Matthew; Henry, Leanne J.; Klopfer, Michael; Jain, Ravinder

    2016-03-01

    The leakage of 1121 nm power from a resonator cavity because of spectral broadening seriously degrades the performance of a Raman resonator by reducing the 1121 nm circulating power and the 1178 nm output power. Therefore, it is important to understand the conditions which minimize 1121 nm power leakage, maximize 1121 intracavity and 1178 nm output power while enabling a manageable Stimulated Brillouin Scattering gain for narrow linewidth systems. It was found that cavity lengths longer than approximately 40 m didn't result in significantly more 1121 nm linewidth broadening. Relative to the high reflectivity bandwidth of the fiber Bragg gratings, it was found that 4 nm FBGs seemed to optimize 1178 nm amplification while minimizing the amount of 1121 nm power leakage. A two stage high power 1178 nm Raman system was built and 20 W of 1178 nm output power was achieved with a polarization extinction ratio of 21 and nearly diffraction limited beam quality. Linewidth broadening was found to increase as the 1178 nm output increased and was approximately 8 GHz when the 1178 nm output power was 20 W. Because of the linewidth broadening, a co-pumped second Stokes Raman laser system is not useful for the sodium guidestar laser application which requires narrow linewidth.

  20. Multi-watt 589nm fiber laser source

    NASA Astrophysics Data System (ADS)

    Dawson, Jay W.; Drobshoff, Alex D.; Beach, Raymond J.; Messerly, Michael J.; Payne, Stephen A.; Brown, Aaron; Pennington, Deanna M.; Bamford, Douglas J.; Sharpe, Scott J.; Cook, David J.

    2006-02-01

    We have demonstrated 3.5W of 589nm light from a fiber laser using periodically poled stoichio-metric Lithium Tantalate (PPSLT) as the frequency conversion crystal. The system employs 938nm and 1583nm fiber lasers, which were sum-frequency mixed in PPSLT to generate 589nm light. The 938nm fiber laser consists of a single frequency diode laser master oscillator (200mW), which was amplified in two stages to >15W using cladding pumped Nd 3+ fiber amplifiers. The fiber amplifiers operate at 938nm and minimize amplified spontaneous emission at 1088nm by employing a specialty fiber design, which maximizes the core size relative to the cladding diameter. This design allows the 3-level laser system to operate at high inversion, thus making it competitive with the 1088nm 4-level laser transition. At 15W, the 938nm laser has an M2 of 1.1 and good polarization (correctable with a quarter and half wave plate to >15:1). The 1583nm fiber laser consists of a Koheras 1583nm fiber DFB laser that is pre-amplified to 100mW, phase modulated and then amplified to 14W in a commercial IPG fiber amplifier. As a part of our research efforts we are also investigating pulsed laser formats and power scaling of the 589nm system. We will discuss the fiber laser design and operation as well as our results in power scaling at 589nm.

  1. Multi-watt 589nm fiber laser source

    SciTech Connect

    DAWSON, J W; DROBSHOFF, A D; BEACH, R J; MESSERLY, M J; PAYNE, S A; BROWN, A; PENNINGTON, D M; BAMFORD, D J; SHARPE, S J; COOK, D J

    2006-01-19

    We have demonstrated 3.5W of 589nm light from a fiber laser using periodically poled stoichiometric Lithium Tantalate (PPSLT) as the frequency conversion crystal. The system employs 938nm and 1583nm fiber lasers, which were sum-frequency mixed in PPSLT to generate 589nm light. The 938nm fiber laser consists of a single frequency diode laser master oscillator (200mW), which was amplified in two stages to >15W using cladding pumped Nd{sup 3+} fiber amplifiers. The fiber amplifiers operate at 938nm and minimize amplified spontaneous emission at 1088nm by employing a specialty fiber design, which maximizes the core size relative to the cladding diameter. This design allows the 3-level laser system to operate at high inversion, thus making it competitive with the competing 1088nm 4-level laser transition. At 15W, the 938nm laser has an M{sup 2} of 1.1 and good polarization (correctable with a quarter and half wave plate to >15:1). The 1583nm fiber laser consists of a Koheras 1583nm fiber DFB laser that is pre-amplified to 100mW, phase modulated and then amplified to 14W in a commercial IPG fiber amplifier. As a part of our research efforts we are also investigating pulsed laser formats and power scaling of the 589nm system. We will discuss the fiber laser design and operation as well as our results in power scaling at 589nm.

  2. Magnetic Susceptibility of liquid Gd-NM (NM = Cu, Ga, Ge) alloys

    NASA Astrophysics Data System (ADS)

    Shimakura, Hironori; Tahara, Shuta; Okada, Tatsuya; Ohno, Satoru

    2017-08-01

    For rare earth alloys, the indirect interaction of RKKY is at work between rare-earth atoms. Therefore, the magnetism of them depends on the number of conduction electrons and the distance between rare-earth metals. In this work, to reveal the relationship between the number of conduction electrons and magnetic property of rare earth metal alloys, magnetic susceptibility measurements for liquid Gd-NM (NM = Cu, Ga, Ge) was performed by Faraday method. As the results, it was observed that the sign of paramagnetic Curie temperature of Cu-Gd alloys are positive at all composition, while Ga-Gd and Ge-Gd alloys show negative paramagnetic Curie temperature at certain composition. Moreover, it was indicated when the alloy at certain composition shows highest melting temperature, it has the lowest paramagnetic Curie temperature.

  3. Novel 980-nm and 490-nm light sources using vertical cavity lasers with extended coupled cavities

    NASA Astrophysics Data System (ADS)

    McInerney, John G.; Mooradian, Aram; Lewis, Alan; Shchegrov, Andrei V.; Strzelecka, Eva M.; Lee, Dicky; Watson, Jason P.; Liebman, Michael K.; Carey, Glen P.; Umbrasas, Arvydas; Amsden, Charles A.; Cantos, Brad D.; Hitchens, William R.; Heald, David L.; Doan, Vincent V.; Cannon, J. L.

    2003-04-01

    We have developed novel electrically pumped, surface-emitting lasers emitting at 980 nm with an extended coupled cavity. The concept is scalable from monolithic low power devices all the way to high power extended cavity lasers. The latter have demonstrated 1W cw multi-mode and 0.5 W cw in a TEM00 mode and a single frequency, with 90% coupling efficiency into a single-mode fiber. By inserting a nonlinear optical medium in the external cavity, efficient and compact frequency doubling has been achieved with CW output powers 5-40 mW demonstrated at 490 nm. The latter devices are especially noteworthy due to their very low noise, sub 10 μrad beam pointing stability combined with small size, low power consumption and high efficiency.

  4. Polarization properties of lidar scattering from clouds at 347 nm and 694 nm.

    PubMed

    Pal, S R; Carswell, A I

    1978-08-01

    The polarization characteristics of lidar scattering from cumulus and low-lying shower clouds have been measured with a system operating at 694 nm (red) and 347 nm (blue). The backscatter profiles of the polarization components as well as of the total intensity of the return are presented and discussed for the two wavelengths. The linear depolarization ratio delta, which can be used as a measure of the unpolarized multiple scattering, has been obtained at both wavelengths. This quantity has a very low value at cloud base for both wavelengths and increases with pulse penetration. The blue registers generally higher values of a within the cloud. The measured total intensity backscatter functions for both wavelengths are presented and discussed in relation to theoretical calculations of cloud models.

  5. Distributed Humidity Sensing in PMMA Optical Fibers at 500 nm and 650 nm Wavelengths.

    PubMed

    Liehr, Sascha; Breithaupt, Mathias; Krebber, Katerina

    2017-03-31

    Distributed measurement of humidity is a sought-after capability for various fields of application, especially in the civil engineering and structural health monitoring sectors. This article presents a method for distributed humidity sensing along polymethyl methacrylate (PMMA) polymer optical fibers (POFs) by analyzing wavelength-dependent Rayleigh backscattering and attenuation characteristics at 500 nm and 650 nm wavelengths. Spatially resolved humidity sensing is obtained from backscatter traces of a dual-wavelength optical time domain reflectometer (OTDR). Backscatter dependence, attenuation dependence as well as the fiber length change are characterized as functions of relative humidity. Cross-sensitivity effects are discussed and quantified. The evaluation of the humidity-dependent backscatter effects at the two wavelength measurements allows for distributed and unambiguous measurement of relative humidity. The technique can be readily employed with low-cost standard polymer optical fibers and commercial OTDR devices.

  6. Damage Thresholds for Cultures RPE Cells Exposed to Lasers at 532 nm and 458 nm

    DTIC Science & Technology

    2007-06-01

    in onhuman primate studies. Results of in vivo studies have hown that laser damage in the retina depends upon wave- ength, power level, and duration...laser exposure similarly to RPE cells in nonhuman primate models. Our approach was to determine threshold ED50 radiant exposures for damage over a broad...our n vitro system 160 MP/cell responds in a fundamentally imilar fashion to 532-nm laser irradiation, as does the non- uman primate retina

  7. Retinal Injury From Simultaneous Exposure to 532 nm and 860 nm Laser Irradiation

    DTIC Science & Technology

    2004-01-01

    860 nm Laser Irradiation DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the following report: TITLE: Laser...Radiation Branch, Brooks City-Base, TX 78235-52783U.S Army Medical Research Detachment , Walter Reed Army Institute of Research, Brooks AFB, Texas 78235...This study was designed to investigate the retinal effects of two lasers being used to simultaneously expose the retina and determine the minimum

  8. TUNABLE DIODE LASER MEASUREMENTS OF NO2 NEAR 670 NM AND 395 NM. (R823933)

    EPA Science Inventory

    Two single-mode diode lasers were used to record high-resolution absorption spectra of NO2 (dilute in Ar) near 670.2 and 394.5 nm over a range of temperatures (296 to 774 K) and total pressures (2.4 x 10(-2) to 1 atm). A commercial InGaAsP laser was tuned 1.3 cm(-1) at a repetiti...

  9. TUNABLE DIODE LASER MEASUREMENTS OF NO2 NEAR 670 NM AND 395 NM. (R823933)

    EPA Science Inventory

    Two single-mode diode lasers were used to record high-resolution absorption spectra of NO2 (dilute in Ar) near 670.2 and 394.5 nm over a range of temperatures (296 to 774 K) and total pressures (2.4 x 10(-2) to 1 atm). A commercial InGaAsP laser was tuned 1.3 cm(-1) at a repetiti...

  10. Inflammatory Cytokine Expression and Sebum Production after Exposure of Cultured Human Sebocytes to Ultraviolet A Radiation and Light at Wavelengths of 650 nm and 830 nm

    PubMed Central

    Chae, Soo Yuhl; Ryu, Hyo Sub; Jang, Yong Hyun; Lee, Seok-Jong; Kim, Do Won

    2015-01-01

    Background The effectiveness of ultraviolet (UV) radiation, visible light, or infrared light therapy for the treatment of acne is the subject of ongoing scientific debate. Objective This study was conducted to investigate changes in sebum production and the expression of inflammatory cytokines, matrix metalloproteinases (MMPs), and antimicrobial peptides (AMPs), following exposure of cultured human sebocytes to UVA radiation and light at wavelengths of 650 nm and 830 nm. Methods Reverse transcription polymerase chain reaction assays were performed to measure the gene expression levels of inflammatory cytokines (interleukin [IL]-1β, IL-6, IL-8, and tumor necrosis factor-α), MMPs (MMP-1, MMP-3, and MMP-9), and AMPs (psoriasin, hBD-2, hBD-3, and LL-37) in cultured sebocytes after exposure to UVA radiation (2 J/cm2, 3 J/cm2, and 5 J/cm2) and light at wavelengths of 650 nm (14 J/cm2, 29 J/cm2, and 87 J/cm2) and 830 nm (5 J/cm2, 10 J/cm2, and 30 J/cm2). Expression of inflammatory cytokine proteins and sebum production were measured using enzyme-linked immunoassays and a lipid analysis kit, respectively. Results Exposure of cultured sebocytes to UVA radiation and light at wavelengths of 650 nm and 830 nm did not show a significant increase in the expression of inflammatory cytokines, MMPs, or AMPs. Sebum production was not significantly decreased after exposure to UVA radiation and light at both wavelengths. Conclusion We propose that UVA radiation, visible light, and infrared light can be used to target Propionibacterium acnes for the treatment of acne, without an increase in the expression of inflammatory biomarkers and sebum production. PMID:25834355

  11. Inflammatory Cytokine Expression and Sebum Production after Exposure of Cultured Human Sebocytes to Ultraviolet A Radiation and Light at Wavelengths of 650 nm and 830 nm.

    PubMed

    Lee, Weon Ju; Chae, Soo Yuhl; Ryu, Hyo Sub; Jang, Yong Hyun; Lee, Seok-Jong; Kim, Do Won

    2015-04-01

    The effectiveness of ultraviolet (UV) radiation, visible light, or infrared light therapy for the treatment of acne is the subject of ongoing scientific debate. This study was conducted to investigate changes in sebum production and the expression of inflammatory cytokines, matrix metalloproteinases (MMPs), and antimicrobial peptides (AMPs), following exposure of cultured human sebocytes to UVA radiation and light at wavelengths of 650 nm and 830 nm. Reverse transcription polymerase chain reaction assays were performed to measure the gene expression levels of inflammatory cytokines (interleukin [IL]-1β, IL-6, IL-8, and tumor necrosis factor-α), MMPs (MMP-1, MMP-3, and MMP-9), and AMPs (psoriasin, hBD-2, hBD-3, and LL-37) in cultured sebocytes after exposure to UVA radiation (2 J/cm(2), 3 J/cm(2), and 5 J/cm(2)) and light at wavelengths of 650 nm (14 J/cm(2), 29 J/cm(2), and 87 J/cm(2)) and 830 nm (5 J/cm(2), 10 J/cm(2), and 30 J/cm(2)). Expression of inflammatory cytokine proteins and sebum production were measured using enzyme-linked immunoassays and a lipid analysis kit, respectively. Exposure of cultured sebocytes to UVA radiation and light at wavelengths of 650 nm and 830 nm did not show a significant increase in the expression of inflammatory cytokines, MMPs, or AMPs. Sebum production was not significantly decreased after exposure to UVA radiation and light at both wavelengths. We propose that UVA radiation, visible light, and infrared light can be used to target Propionibacterium acnes for the treatment of acne, without an increase in the expression of inflammatory biomarkers and sebum production.

  12. Solution voltammetry of 4 nm magnetite iron oxide nanoparticles.

    PubMed

    Roberts, Joseph J P; Westgard, John A; Cooper, Laura M; Murray, Royce W

    2014-07-30

    The voltammetry of solution-dispersed magnetite iron oxide Fe3O4 nanoparticles is described. Their currents are controlled by nanoparticle transport rates, as shown with potential step chronoamperometry and rotated disk voltammetry. In pH 2 citrate buffer with added NaClO4 electrolyte, solution cyclic voltammetry of these nanoparticles (average diameter 4.4 ± 0.9 nm, each containing ca. 30 Fe sites) displays an electrochemically irreversible oxidation with E(PEAK) at ca. +0.52 V and an irreversible reduction with E(PEAK) at ca. +0.2 V vs Ag/AgCl reference electrode. These processes are presumed to correspond to the formal potentials for one-electron oxidation of Fe(II) and reduction of Fe(III) at their different sites in the magnetite nanoparticle structure. The heterogeneous electrode reaction rates of the nanoparticles are very slow, in the 10(-5) cm/s range. The nanoparticles are additionally characterized by a variety of tools, e.g., TEM, UV/vis, and XPS spectroscopies.

  13. FY09 assessment of mercury reduction at SNL/NM.

    SciTech Connect

    McCord, Samuel Adam

    2010-02-01

    This assessment takes the result of the FY08 performance target baseline of mercury at Sandia National Laboratories/New Mexico, and records the steps taken in FY09 to collect additional data, encourage the voluntary reduction of mercury, and measure success. Elemental (metallic) mercury and all of its compounds are toxic, and exposure to excessive levels can permanently damage or fatally injure the brain and kidneys. Elemental mercury can also be absorbed through the skin and cause allergic reactions. Ingestion of inorganic mercury compounds can cause severe renal and gastrointestinal damage. Organic compounds of mercury such as methyl mercury, created when elemental mercury enters the environment, are considered the most toxic forms of the element. Exposures to very small amounts of these compounds can result in devastating neurological damage and death.1 SNL/NM is required to report annually on the site wide inventory of mercury for the Environmental Protection Agency's (EPA) Toxics Release Inventory (TRI) Program, as the site's inventory is excess of the ten pound reportable threshold quantity. In the fiscal year 2008 (FY08) Pollution Prevention Program Plan, Section 5.3 Reduction of Environmental Releases, a performance target stated was to establish a baseline of mercury, its principle uses, and annual quantity or inventory. This was accomplished on July 29, 2008 by recording the current status of mercury in the Chemical Information System (CIS).

  14. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    DOE PAGES

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; ...

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environmentsmore » for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.« less

  15. A robust 45 nm gate-length CMOSFET for 90 nm Hi-speed technology

    NASA Astrophysics Data System (ADS)

    Lim, K. Y.; Chan, V.; Rengarajan, R.; Lee, H. K.; Rovedo, N.; Lim, E. H.; Yang, S.; Jamin, F.; Nguyen, P.; Lin, W.; Lai, C. W.; Teh, Y. W.; Lee, J.; Kim, L.; Luo, Z.; Ng, H.; Sudijono, J.; Wann, C.; Yang, I.

    2006-04-01

    We have developed a robust 45 nm gate-length CMOSFET for 90 nm node high performance application. Aggressive gate length and gate dielectric scaling along with optimized strain engineering enable high performance device similar to 65 nm node CMOSFET [Nakahara Y, et al. IEDM Tech Dig 2003;281] We have utilized oxy-nitride gate with post-nitridation anneal, high ramp rate spike anneal, low temperature spacer scheme and stress controlled SiN contact etch stop liner process in order to improve drive current as well as transistor short-channel roll-off. In particular, we will focus on the study of middle-of-line (MOL) process parameters, (i.e. MOL thermal expense and mechanical stress from contact etch stop liner) on transistor performance and reliability. Based on the study, we have obtained device exhibit drive-current of 900/485 μA/μm for NMOSFET and PMOSFET, respectively, at standard supply voltage of 1 V.

  16. High-resolution photoabsorption cross section measurements of sulfur dioxide between 198 nm and 325 nm

    NASA Astrophysics Data System (ADS)

    Stark, Glenn; Smith, Peter; Blackie, Douglas; Blackwell-Whitehead, Richard; Pickering, Juliet; Rufus, James; Thorne, Anne

    Accurate photoabsorption cross section data at a range of temperatures are required for the incorporation of sulfur dioxide into atmospheric photochemical models. In addition to its role in the terrestrial atmosphere, sulfur dioxide is observed in significant concentrations in the atmospheres of Venus and Io. Our laboratory measurement program focuses on the very congested SO2 spectrum in the ultraviolet. Using the Imperial College UV Fourier transform spectrometer, we have recorded high-resolution (resolving power (λ/∆λ) = 450,000) absorption spectra in the 198 to 325 nm region over a range of temperatures from 160 K to 295 K. This high resolving power allows resolutions approaching those required to fully resolve the Doppler profile of SO2 in the UV. We have reported absolute photoabsorption cross sections at 295 K [Stark et al., JGR Planets 104, 16585 (1999); Rufus et al. JGR Planets 108, doi:10.1029/2002JE001931,(2003)]. Further measurements, at 160 K in the 198 to 200 nm region and at 195 K in the 220 to 325 nm region, have been recorded and analyzed. We present an overview of our new measured cross sections at temperatures and pressures comparable to those found in planetary atmospheres. This work was supported in part by NASA Grant NNG05GA03G, PPARC (UK), and the Leverhulme Trust.

  17. Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

    SciTech Connect

    Trippe, J. M.; Reed, R. A.; Austin, R. A.; Sierawski, B. D.; Weller, R. A.; Funkhouser, E. D.; King, M. P.; Narasimham, B.; Bartz, B.; Baumann, R.; Schrimpf, R. D.; Labello, R.; Nichols, J.; Weeden-Wright, S. L.

    2015-12-01

    In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environments for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.

  18. Quantum yield for carbon monoxide production in the 248 nm photodissociation of carbonyl sulfide (OCS)

    NASA Astrophysics Data System (ADS)

    Zhao, Z.; Stickel, R. E.; Wine, P. H.

    1995-03-01

    Tunable diode laser absorption spectroscopy has been coupled with excimer laser flash photolysis to measure the quantum yield for CO production from 248 nm photo-dissociation of carbonyl sulfide (OCS) relative to the well-known quantum yield for CO production from 248 nm photolysis of phosgene (Cl2CO). The temporal resolution of the experiments was sufficient to distinguish CO formed directly by photodissociation from that formed by subsequent S(³PJ) reaction with OCS. Under the experimental conditions employed, CO formation via the fast S(¹D2) + OCS reaction was minimal. Measurements at 297K and total pressures from 4 to 100 Torr N2 + N2O show the CO yield to be greater than 0.95 and most likely unity. This result suggests that the contribution of OCS as a precursor to the lower stratospheric sulfate aerosol layer is somewhat larger than previously thought.

  19. Quantum yield for carbon monoxide production in the 248 nm photodissociation of carbonyl sulfide (OCS)

    NASA Technical Reports Server (NTRS)

    Zhao, Z.; Stickel, R. E.; Wine, P. H.

    1995-01-01

    Tunable diode laser absorption spectroscopy has been coupled with excimer laser flash photolysis to measure the quantum yield for CO production from 248 nm photodissociation of carbonyl sulfide (OCS) relative to the well-known quantum yield for CO production from 248 nm photolysis of phosgene (Cl2CO2). The temporal resolution of the experiments was sufficient to distinguish CO formed directly by photodissociation from that formed by subsequent S((sup 3)P(sub J)) reaction with OCS. Under the experimental conditions employed, CO formation via the fast S((sup 1)D(sub 2)) + OCS reaction was minimal. Measurements at 297K and total pressures from 4 to 100 Torr N2 + N2O show the CO yield to be greater than 0.95 and most likely unity. This result suggests that the contribution of OCS as a precursor to the lower stratospheric sulfate aerosol layer is somewhat larger than previously thought.

  20. Studies on a cross-linking type positive 193nm photoresist material

    NASA Astrophysics Data System (ADS)

    Wang, Liyuan; Guo, Xin; Chu, Zhanxing; Wang, Wenjun

    2006-03-01

    A kind of diacid, acrylpimaric acid, with condensed alicyclic structure and good film-forming property, was prepared by the Diels-Alder reaction of abietic acid and acrylic acid. In their solid film, the diacid can react with divinyl ether, such as 1,3-divinyloxyethoxybenzene when baked above 80 °C and become insoluble in dilute aqueous base. Thus formed compound can be quickly decomposed at the presence of strong acid generated by PAG above 100 °C and become easily soluble in dilute aqueous base. A positive photoresist can be formed by the diacid, divinyl ether and PAG. The measured photosensitivity is less than 50 mj/cm2 when exposed to low pressure Hg lamp (254nm). The diacid mixture displayed lower transparency than estimated at 193 nm and should be further purified to be used in 193 nm photoresist.

  1. Randomized controlled trial: Comparative efficacy for the treatment of facial telangiectasias with 532 nm versus 940 nm diode laser.

    PubMed

    Tierney, Emily; Hanke, C William

    2009-10-01

    While the 532 nm wavelength has been demonstrated to be effective for facial telangiectasias, 940 nm is a novel wavelength which has only been reported in case reports. While both the 532 and 940 nm wavelengths are effective for facial telangiectasias, we lack evidence to support whether one wavelength is superior. Randomized, blinded split-faced trial for the 532 and 940 nm diode laser wavelengths. Side effects of erythema, crusting, swelling, and blistering (0-5 scale, 0 = not present, 1 = trace, 5 = severe) were assessed. Prior to treatment and at 2 months after a series of two treatments, telangiectasias were assessed (1-10 scale, 1 = focal telangiectasias, 10 = diffuse telangiectasias). Assessment of the degree of improvement in facial telangiectasias was performed by two blinded non-treating physician evaluators from patient photographs. A total of 24 facial anatomic sites were treated with the 532 and 940 nm wavelengths. Presence and severity of side effects of erythema, crusting, swelling, blistering (0-5 scale, 0 = not present, 1 = trace, 5 = severe) were assessed. Pain associated with the laser treatment was rated as significantly less for the 940 nm wavelength relative to the 532 nm wavelength. Erythema post-treatment was significantly less with 940 nm relative to 532 nm. Significant crusting and swelling were only reported with the 532 nm wavelength. The mean percentage improvement with the 940 nm wavelength (63.0%) was greater than that achieved with the 532 nm wavelength (47.8%) (P<0.05). On photographic evaluation, 940 nm was significantly more efficacious for larger caliber vessels than 532 nm. Both wavelengths were equally efficacious for smaller caliber vessels. While both 532 and 940 nm diode laser produced significant improvement in facial telangiectasias, greater efficacy was found with 940 nm as well as a significantly more tolerable side effect profile. Lasers Surg. Med. 41:555-562, 2009. (c) 2009 Wiley-Liss, Inc.

  2. Cell projection use in maskless lithography for 45nm and 32nm logic nodes

    NASA Astrophysics Data System (ADS)

    Manakli, S.; Komami, H.; Takizawa, M.; Mitsuhashi, T.; Pain, L.

    2009-03-01

    Due to the ever-increasing cost of equipment and mask complexity, the use of optical lithography for integrated circuit manufacturing is increasingly more complex and expensive. Recent workshops and conferences in semiconductor lithography underlined that one alternative to support sub-32nm technologies is mask-less lithography option using electron beam technology. However, this direct write approach based on variable shaped beam principle (VSB) is not sufficient in terms of throughput, i.e. of productivity. New direct write techniques like multibeam systems are under development, but these solutions will not be mature before 2012. The use of character/cell projection (CP) on industrial VSB tools is the first step to deal with the throughput concerns. This paper presents the status of the CP technology and evaluates its possible use for the 45nm and 32nm logic nodes. It will present standard cell and SRAM structures that are printed as single characters using the CP technique. All experiments are done using the Advantest tool (F3000) which can project up to 100 different cells per layer. Cell extractions and design have been performed with the design and software solution developed by D2S. In this paper, we first evaluate the performance gain that can be obtained with the CP approach compared to the standard VSB approach. This paper also details the patterning capability obtained by using the CP concept. An evaluation of the CD uniformity and process stability is also presented. Finally this paper discusses about the improvements of this technique to address high resolution and to improve the throughput concerns.

  3. Manufacturability of 2x-nm devices with EUV tool

    NASA Astrophysics Data System (ADS)

    Tawarayama, Kazuo; Nakajima, Yumi; Kyoh, Suigen; Aoyama, Hajime; Matsunaga, Kentaro; Magoshi, Shunko; Tanaka, Satoshi; Hayashi, Yumi; Mori, Ichiro

    2011-04-01

    Due to the promising development status of EUVL as a practical lithography technology for the 2x-nm node, we are continuing to evaluate its process liability using the EUV1 at Selete, which has an Off-Axis illumination capability. The resolution limit of the EUV1 for L&S patterns is currently 18 nm for dipole illumination, and 16 nm for aggressive dipole illumination. This study examined the critical points of EUVL for device manufacturing through wafer processes. The yield obtained from electrical measurements indicates the maturity of the technology, including the resist process, the tool, and the mask. Optimization of the resist and RIE processes significantly improved the yield. The final yields obtained from electrical measurements were 100% for hp 30 nm, 70% for hp 28 nm, and 40% for hp 26 nm. These results demonstrate EUV lithography to be a practical technology that is now suitable for 2x nm semiconductor manufacture.

  4. The electrochemisty of surface modified <10 nm metal oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Roberts, Joseph J. P.

    and ZrO2 nanoparticles was also explored, but resulted in very low surface coverages. ZrO2 nanoparticles were also ferrocene tagged using previously discussed siloxane chemistry as well as a new route using click chemistry with an azo-phosphate ligand. A similar approach was taken with hydrolytically synthesized IrO 2 and is included for comparison. Chapter Five studies the multivalent electrochemistry of 4 nm magnetite nanoparticles. These nanoparticles are synthesized via thermal degradation and capped with citric acid to make them water soluble. pH dependent electrochemistry was discovered and characterized using cyclic voltammetry, chronoamperometry, and rotating disk electrode experiments. Two separate electrochemical species are present and undergo two irreversible, but separate electrochemical reactions; Fe(II) → Fe (III) and Fe(III) → Fe(II).

  5. Ultraviolet 320 nm laser excitation for flow cytometry.

    PubMed

    Telford, William; Stickland, Lynn; Koschorreck, Marco

    2017-02-27

    Although multiple lasers and high-dimensional analysis capability are now standard on advanced flow cytometers, ultraviolet (UV) lasers (usually 325-365 nm) remain an uncommon excitation source for cytometry. This is primarily due to their cost, and the small number of applications that require this wavelength. The development of the Brilliant Ultraviolet (BUV fluorochromes, however, has increased the importance of this formerly niche excitation wavelength. Historically, UV excitation was usually provided by water-cooled argon- and krypton-ion lasers. Modern flow cytometers primary rely on diode pumped solid state lasers emitting at 355 nm. While useful for all UV-excited applications, DPSS UV lasers are still large by modern solid state laser standards, and remain very expensive. Smaller and cheaper near UV laser diodes (NUVLDs) emitting at 375 nm make adequate substitutes for 355 nm sources in many situations, but do not work as well with very short wavelength probes like the fluorescent calcium chelator indo-1. In this study, we evaluate a newly available UV 320 nm laser for flow cytometry. While shorter in wavelength that conventional UV lasers, 320 is close to the 325 nm helium-cadmium wavelength used in the past on early benchtop cytometers. A UV 320 nm laser was found to excite almost all Brilliant Ultraviolet dyes to nearly the same level as 355 nm sources. Both 320 nm and 355 nm sources worked equally well for Hoechst and DyeCycle Violet side population analysis of stem cells in mouse hematopoetic tissue. The shorter wavelength UV source also showed excellent excitation of indo-1, a probe that is not compatible with NUVLD 375 nm sources. In summary, a 320 nm laser module made a suitable substitute for conventional 355 nm sources. This laser technology is available in a smaller form factor than current 355 nm units, making it useful for small cytometers with space constraints. © 2017 International Society for Advancement of Cytometry.

  6. Sidewall spacer quadruple patterning for 15nm half-pitch

    NASA Astrophysics Data System (ADS)

    Xu, Ping; Chen, Yongmei; Chen, Yijian; Miao, Liyan; Sun, Shiyu; Kim, Sung-Woo; Berger, Ami; Mao, Daxin; Bencher, Christ; Hung, Raymond; Ngai, Chris

    2011-04-01

    193nm immersion lithography, with the single-exposure resolution limitation of half-pitch 38nm, has extended its patterning capability to about 20nm using the double-patterning technique[1]. Despite the non-trivial sub-20nm patterning challenges, several NAND Flash manufacturers are already pursuing for sub-16nm patterning technology. 25nm NAND flash memory has already begun production in 2010, and given the typical 2-year scaling cycle, sub-16nm NAND devices should see pilot or mass production as early as 2014. Using novel patterning techniques such as sidewall spacer quadruple patterning (upon 120nm to 128nm pitch using dry ArF lithography) or triple patterning (upon 90nm pitch using immersion ArF lithography), we are able to extend optical lithography to sub-16nm half-pitch and demonstrate the lithographic performance that can nearly meet the ITRS roadmap requirements. In this paper, we conduct an in-depth review and demonstration of sidewall spacer quadruple patterning; including 300mm wafer level data of the mean values and CDU along with a mathematical assessment of the various data pools for sub-16nm lines and spaces. By understanding which processes (lithography, deposition, and etch) define the critical dimension of each data pool, we can make predictions of CDU capability for the sidewall spacer quad patterning. Our VeritySEM4i CD SEM tool demonstrated high measurement yield during fully automated measurements, which enables accurate lines, spaces and CDU measurements of the sub-16nm. The patterns generated from the sidewall spacer quadruple patterning techniques are used as a hardmask to transfer sub-16nm lines and spaces patterns to underneath amorphous silicon and silicon oxide layers, or poly silicon layer for 1X STI or poly gate applications.

  7. Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

    PubMed

    Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

    2016-10-12

    We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

  8. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    NASA Astrophysics Data System (ADS)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  9. Measurements of Stokes parameters of materials at 1064-nm and 532-nm wavelengths

    NASA Astrophysics Data System (ADS)

    Tan, Songxin; Narayanan, Ram M.; Kalshoven, James E., Jr.

    2001-09-01

    Laser radar systems have found wide applications in the field of remote sensing. Reflectance as well as polarization features are used together for applications ranging from environmental monitoring to target classification. The Stokes parameters are ideal quantities for characterizing the above features because they provide useful information on both light intensity and polarization state. The University of Nebraska is currently refurbishing an airborne multi-wavelength laser radar system based on the NASA Goddard Space Flight Center (GSFC) developed Airborne Laser Polarimetric Sensor (ALPS). The system uses a Nd:YAG laser operating at wavelengths of 1064 nm and 532 nm, and contains four channels at each wavelength to measure the polarization states. This system was used to measure the Stokes parameters of backscattered laser light from different materials. These included canvas tarp, white paper, plywood, concrete, aluminum plate and anodized aluminum plate. The data provide an understanding of the polarized scattering properties of various materials, and are expected to be useful in developing target discrimination algorithms.

  10. Expression of NM23 in human melanoma progression and metastasis.

    PubMed Central

    Easty, D. J.; Maung, K.; Lascu, I.; Véron, M.; Fallowfield, M. E.; Hart, I. R.; Bennett, D. C.

    1996-01-01

    NM23 is a putative metastasis-suppressor gene for some human cancers. Here we have studied NM23 expression during melanoma progression using Northern blotting and immunocytochemistry. There was no significant difference in the average amounts of NM23 mRNA between cell lines derived from metastatic and primary melanomas. The level of NM23 mRNA was also determined for three pairs of poorly metastatic parental (P) and their highly metastatic variant (M) cell lines; the ratios for M/P were 1.2, 0.98 and 0.80. Next we used immunocytochemistry to study NM23 protein in normal skin, benign naevi and primary and metastatic melanomas. Melanocytes in all normal skin and benign samples were positive for NM23; however most primary melanomas (7/11) were not stained by the antibody. All metastatic melanoma samples (5/5) were positively stained. Findings were similar with an antiserum reactive with both forms of NM23 (H1 and H2), and with an antibody specific for NM23-H1. No relationship was apparent between NM23 immunoreactivity in primary tumours and their aggressiveness or prognosis. Hence, in contrast to the situation described for murine melanoma, the amount of NM23 mRNA or protein in human melanoma did not correlate inversely with metastasis. Images Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 PMID:8679442

  11. Comparison between HMME mediated photodynamic therapy using 413nm and 532nm for port wine stains: a mathematical simulation study

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Gu, Y.; Chen, R.; Xu, L. Q.; Liao, X. H.; Huang, N. Y.; Wang, Y. Y.

    2007-11-01

    Introduction: As it is always difficult to find the optimal combination of photosensitizer and of laser wavelength to achieve selective vascular damage in PWS-PDT, the selective vascular effects of HMME (Hematoporphyrin monomethyl ether) mediated PDT with 413 nm and with 532 nm were compared by mathematical simulation in this study. Materials & Methods: Firstly, distribution of 413 nm, 532 nm light in PWS tissue was simulated by Monte Carlo model. Two energy density groups were set, one is 80mW/cm2x40min for both 413 nm and 532 nm, the other is 80mW/cm2x40min for 532 nm while 80mW/cm2x20min in for 413 nm. Secondly, the productivity of reactive oxygen species (ROS) in target vessels and normal tissue were simulated using a simulation system for PDT of PWS established in our lab, which considering the amount of light and photosensitizer in tissue, the molar extinction coefficient of photosensitizer, and quantum yield of ROS. Concentration of HMME for each wavelength were same. Finally, the productivity of ROS n in target vessels and normal tissue were compared between 413 nm PDT and 532 nm PDT under different energy density. Result: Under the same energy density, ROS productivity in target vessels of 413 nm PDT was significantly higher than that of 532 nm PDT. Moreover, it was still higher at low energy density than that of 532nm PDT with high energy density. Conclusion: HMME mediated PDT using 413 nm has the potential to increase the selective vascular effect of PDT for PWS by shortening treatment time.

  12. Segmentation of the macular choroid in OCT images acquired at 830nm and 1060nm

    NASA Astrophysics Data System (ADS)

    Lee, Sieun; Beg, Mirza F.; Sarunic, Marinko V.

    2013-06-01

    Retinal imaging with optical coherence tomography (OCT) has rapidly advanced in ophthalmic applications with the broad availability of Fourier domain (FD) technology in commercial systems. The high sensitivity afforded by FD-OCT has enabled imaging of the choroid, a layer of blood vessels serving the outer retina. Improved visualization of the choroid and the choroid-sclera boundary has been investigated using techniques such as enhanced depth imaging (EDI), and also with OCT systems operating in the 1060-nm wavelength range. We report on a comparison of imaging the macular choroid with commercial and prototype OCT systems, and present automated 3D segmentation of the choroid-scleral layer using a graph cut algorithm. The thickness of the choroid is an important measurement to investigate for possible correlation with severity, or possibly early diagnosis, of diseases such as age-related macular degeneration.

  13. Sub-10 nm patterning using EUV interference lithography.

    PubMed

    Päivänranta, Birgit; Langner, Andreas; Kirk, Eugenie; David, Christian; Ekinci, Yasin

    2011-09-16

    Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.

  14. A precise measurement of lunar spectral irradiance from 450 nm to 1000 nm

    NASA Astrophysics Data System (ADS)

    Cramer, C. E.; Lykke, K.; Woodward, J. T.; Smith, A. W.

    2013-12-01

    Although the Moon is our nearest celestial neighbor, our knowledge of its absolute spectral irradiance is an order of magnitude less precise than our knowledge of the best-calibrated stars, including the Sun. A precise determination of the Moon's absolute spectral irradiance has the potential to improve on-orbit calibrations of Earth-observing instruments and extend atmospheric monitoring techniques based on Sun photometry to nighttime measurements based on lunar spectrophotometry. Observations of the Moon have already been used to track changes in satellite sensor response at the sub-percent level, relying on a model of lunar irradiance developed by the United States Geological Survey to predict time-dependent changes in lunar irradiance. The absolute scale of this model, however, is not known accurately enough to allow the Moon to specify an absolute scale for instrument response on orbit or to bridge gaps in various climate data records. We report initial measurements of lunar spectral irradiance with an uncertainty below 1 % from 420 nm to 1000 nm and compare them with the USGS model. Our measurement uncertainty meets the radiometric calibration requirement for many climate data records derived from satellite images, including those for vegetation, aerosols, and snow and ice albedo. It therefore opens the possibility of using the Moon as a calibration standard to bridge gaps in satellite coverage and validate atmospheric retrieval algorithms. Our measurement technique also yields detailed information about the atmosphere at the measurement site, suggesting that lunar observations are a possible solution for aerosol monitoring during the polar winter and can provide nighttime measurements to complement aerosol data collected with Sun photometers. Our measurement, made with a novel apparatus, is an order of magnitude more accurate than the previous state-of-the-art and has continuous spectral coverage, removing the need to interpolate between filter passbands.

  15. Generation of 35.5-nm coherent radiation.

    PubMed

    Bokor, J; Bucksbaum, P H; Freeman, R R

    1983-04-01

    Tunable coherent radiation was produced at 35.5 nm by seventh-harmonic conversion of 248-nm radiation from a krypton fluoride excimer laser. The nonlinear interaction took place at the intersection of the laser focus and a pulsed, supersonic helium gas jet. Third- and fifth-harmonic generation produced coherent outputs at 83 and 50 nm in both helium and xenon gas jets.

  16. 32nm node technology development using interference immersion lithography

    NASA Astrophysics Data System (ADS)

    Sewell, Harry; McCafferty, Diane; Markoya, Louis; Hendrickx, Eric; Hermans, Jan; Ronse, Kurt

    2005-05-01

    The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems. This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node. Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied. Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

  17. Detection limits of 405 nm and 633 nm excited PpIX fluorescence for brain tumor detection during stereotactic biopsy

    NASA Astrophysics Data System (ADS)

    Markwardt, Niklas; Götz, Marcus; Haj-Hosseini, Neda; Hollnburger, Bastian; Sroka, Ronald; Stepp, Herbert; Zelenkov, Petr; Rühm, Adrian

    2016-04-01

    5-aminolevulinic-acid-(5-ALA)-induced protoporphyrin IX (PpIX) fluorescence may be used to improve stereotactic brain tumor biopsies. In this study, the sensitivity of PpIX-based tumor detection has been investigated for two potential excitation wavelengths (405 nm, 633 nm). Using a 200 μm fiber in contact with semi-infinite optical phantoms containing ink and Lipovenös, PpIX detection limits of 4.0 nM and 200 nM (relating to 1 mW excitation power) were determined for 405 nm and 633 nm excitation, respectively. Hence, typical PpIX concentrations in glioblastomas of a few μM should be well detectable with both wavelengths. Additionally, blood layers of selected thicknesses were placed between fiber and phantom. Red excitation was shown to be considerably less affected by blood interference: A 50 μm blood layer, for instance, blocked the 405- nm-excited fluorescence completely, but reduced the 633-nm-excited signal by less than 50%. Ray tracing simulations demonstrated that - without blood layer - the sensitivity advantage of 405 nm rises for decreasing fluorescent volume from 50-fold to a maximum of 100-fold. However, at a tumor volume of 1 mm3, which is a typical biopsy sample size, the 633-nm-excited fluorescence signal is only reduced by about 10%. Further simulations revealed that with increasing fiber-tumor distance, the signal drops faster for 405 nm. This reduces the risk of detecting tumor tissue outside the needle's coverage, but diminishes the overlap between optically and mechanically sampled volumes. While 405 nm generally offers a higher sensitivity, 633 nm is more sensitive to distant tumors and considerably superior in case of blood-covered tumor tissue.

  18. The OH + HBr reaction revisited

    NASA Technical Reports Server (NTRS)

    Ravishankara, A. R.; Wine, P. H.; Wells, J. R.

    1985-01-01

    Variable-temperature measurements of the rate coefficient /k(1)/ for the reaction OH + HBr yield Br + H2O are presented. The measurements are verified by two techniques: one involved a 266-nm pulsed-laser photolysis of O3/H2O/HBr/He mixtures in conjunction with time-resolved resonance fluorescence detection of OH, the second comprised pulsed laser-induced fluorescence detection of OH following 248-nm pulsed-laser photolysis of H2O2/HBr/Ar mixtures. It is reported that k(1) = (11.9 + or -1.4 x 10 to the -12th (cu cm)/(molecule)(s) independent of temperature. The measurements are compared with other available results.

  19. 40nm tunable multi-wavelength fiber laser

    NASA Astrophysics Data System (ADS)

    Jia, Qingsong; Wang, Tianshu; Zhang, Peng; Dong, Keyan; Jiang, Huilin

    2014-12-01

    A Brillouin-Erbium multi-wavelength tunable fiber laser at C-band is demostrated. A 10 km long singlemode fiber(SMF), a 6 m long Erbium-doped fiber, two couplers, a wavelength division multiplexer, a isolator, an optical circulator, a 980nm pump laser and a narrow linewidth tunable laser are included in the structure. A segment of 10 km-long single-mode fiber (SMF) between the two ports of a 1×2 coupler is used as Brillouin gain. Ebiumdoped fiber amplifier (EDFA) consists of a segment of 6m er-doped fiber pumped by 980nm laser dioder . A narrow linewidth tunable laser from 1527 to 1607 nm as Brillouin bump, At the Brillouin pump power of 8mW and the 980 nm pump power of 400 mw, 16 output channels with 0.08 nm spacing and tuning range of 40 nm from 1527 nm to 1567 nm are achieved. We realize the tunable output of wavelength by adjusting the 980 nm pump power and the Brillouin pump wavelength. Stability of the multiwavelength fiber laser is also observed.

  20. Generation and use of high power 213 nm and 266 nm laser radiation and tunable 210-400 nm laser radiation with BBO crystal matrix array

    DOEpatents

    Gruen, Dieter M.

    2000-01-01

    A 213 nm laser beam is capable of single photon ablative photodecomposition for the removal of a polymer or biological material substrate. Breaking the molecular bonds and displacing the molecules away from the substrate in a very short time period results in most of the laser photon energy being carried away by the displaced molecules, thus minimizing thermal damage to the substrate. The incident laser beam may be unfocussed and is preferably produced by quintupling the 1064 nm radiation from a Nd:YAG solid state laser, i.e., at 213 nm. In one application, the 213 nm laser beam is expanded in cross section and directed through a plurality of small beta barium borate (BBO) crystals for increasing the energy per photon of the laser radiation directed onto the substrate. The BBO crystals are arranged in a crystal matrix array to provide a large laser beam transmission area capable of accommodating high energy laser radiation without damaging the BBO crystals. The BBO crystal matrix array may also be used with 266 nm laser radiation for carrying out single or multi photon ablative photodecomposition. The BBO crystal matrix array may also be used in an optical parametric oscillator mode to generate high power tunable laser radiation in the range of 210-400 nm.

  1. Evaluation of dental pulp repair using low level laser therapy (688 nm and 785 nm) morphologic study in capuchin monkeys

    NASA Astrophysics Data System (ADS)

    Pretel, H.; Oliveira, J. A.; Lizarelli, R. F. Z.; Ramalho, L. T. O.

    2009-02-01

    The aim of this study was to evaluate the hypothesis that low-level laser therapy (LLLT) 688 nm and 785 nm accelerate dentin barrier formation and repair process after traumatic pulp exposure. The sample consisted of 45 premolars of capuchin monkeys (Cebus apella) with pulp exposure Class V cavities. All premolars were treated with calcium hydroxide (Ca(OH)2), divided in groups of 15 teeth each, and analyzed on 7th, 25th, and 60th day. Group GI - only Ca(OH)2, GII - laser 688 nm, and GIII - laser 785 nm. Laser beam was used in single and punctual dose with the parameters: continuous, 688 nm and 785 nm wavelength, tip's area of 0.00785 cm2, power 50 mW, application time 20 s, dose 255 J/cm2, energy 2 J. Teeth were capped with Ca(OH)2, Ca(OH)2 cement and restored with amalgam. All groups presented pulp repair. On 25th day the thickness of the formed dentin barrier was different between the groups GI and GII (p < 0.05) and between groups GI and GIII (p < 0.01). On 60th day there was difference between GI and GIII (p < 0.01). It may be concluded that, LLLT 688 nm and 785 nm accelerated dentin barrier formation and consequently pulp repair process, with best results using infrared laser 785 nm.

  2. Competition between photochemistry and energy transfer in ultraviolet-excited diazabenzenes. I. Photofragmentation studies of pyrazine at 248 nm and 266 nm

    SciTech Connect

    Sevy, Eric T.; Muyskens, Mark A.; Rubin, Seth M.; Flynn, George W.; Muckerman, James T.

    2000-04-01

    The quantum yield for the formation of HCN from the photodissociation of pyrazine excited at 248 nm and 266 nm is determined by IR diode probing of the HCN photoproduct. HCN photoproducts from excited pyrazine are produced via three different dissociation channels, one that is extremely ''prompt'' and two others that are ''late.'' The total quantum yield from all reaction channels obtained at low quencher gas pressures, {phi}=1.3{+-}0.2 for 248 nm and 0.5{+-}0.3 for 266 nm, is in agreement with preliminary studies of this process as well as recent molecular beam studies. To investigate if HCN production is the result of pyrazine multiphoton absorption, this photodissociation process has been further studied by observing the HCN quantum yield as a function of total quencher gas pressure (10 mTorr pyrazine, balance SF{sub 6}) and as a function of 248 nm laser fluence from 2.8 to 82 mJ/cm2. At the highest SF{sub 6} pressures, the HCN quantum yield shows strong positive correlation with laser fluence, indicating that the ''prompt'' channel is the result of multiphoton absorption; however, at low pressure, the HCN quantum yield is affected little by changing laser fluence, indicating that the majority of the HCN photoproducts at low pressure are produced from pyrazine which has absorbed only one UV photon. At the lowest pressures sampled, HCN produced from the one-photon ''late'' process accounts for more than 95% of all HCN formed (at low laser fluence). At high pressures the single photon ''late'' pyrazine dissociation is quenched, and HCN produced at high quencher gas pressures comes only from the multiphoton absorption channel, which can be clearly observed to depend on laser fluence. The HCN quantum yield as a function of laser intensity at high pressure has been fit to a quadratic function that can be used to determine the amount of ''prompt'' ''unquenched'' HCN produced from multiphoton photodissociation. Additionally, the information theoretic prior functions

  3. On high speed transmission with the 850nm VCSELs

    NASA Astrophysics Data System (ADS)

    Turkiewicz, Jarosław P.; Chorchos, Łukasz; Puerta Ramirez, Rafael; Vegas Olmos, Juan Jose; Ledentsov, Nikolay

    2016-09-01

    One of the key research challenges is development of energy efficient high bit rate data interconnects. The most promising solutions are based on 850 nm vertical cavity surface emitting lasers (VCSEL) and multi mode fibre (MMF). In this paper options to realize energy efficient 850 nm data interconnects are discussed and evaluated.

  4. A 532 nm Chaotic Fiber Laser Transmitter for Underwater Lidar

    DTIC Science & Technology

    2013-04-23

    cutting, marking, and welding [72, 77, 78]. Ytterbium-doped fibers (YDFs) are particularly efficient absorbers of pump light, so very high pump powers...components at 1550 nm, but can be frustratingly high (often 30- 40%) for 1064 nm components. The mismatches between dissimilar fibers’ effective mode

  5. Single-nm resolution approach by applying DDRP and DDRM

    NASA Astrophysics Data System (ADS)

    Shibayama, Wataru; Shigaki, Shuhei; Takeda, Satoshi; Nakajima, Makoto; Sakamoto, Rikimaru

    2017-03-01

    EUV lithography has been desired as the leading technology for 1x or single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off has been the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) and Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp1X nm L/S and single nm line patterning. Especially, semi iso 8nm line was successfully achieved with good LWR (2.5nm) and around 3 times aspect ratio. This single nm patterning technique also helped to enhance sensitivity about 33%. On the other hand, pillar patterning thorough CH pattern by applying DDRP also showed high resolution below 20nm pillar CD with good LCDU and high sensitivity. This new DDRP technology can be the promising approach not only for hp1Xnm level patterning but also single nm patterning in N7/N5 and beyond.

  6. A New Solar Spectrum from 656 to 3088 nm

    NASA Astrophysics Data System (ADS)

    Meftah, M.; Damé, L.; Bolsée, D.; Pereira, N.; Sluse, D.; Cessateur, G.; Irbah, A.; Sarkissian, A.; Djafer, D.; Hauchecorne, A.; Bekki, S.

    2017-08-01

    The solar spectrum is a key parameter for different scientific disciplines such as solar physics, climate research, and atmospheric physics. The SOLar SPECtrometer (SOLSPEC) instrument of the Solar Monitoring Observatory (SOLAR) payload onboard the International Space Station (ISS) has been built to measure the solar spectral irradiance (SSI) from 165 to 3088 nm with high accuracy. To cover the full wavelength range, three double-monochromators with concave gratings are used. We present here a thorough analysis of the data from the third channel/double-monochromator, which covers the spectral range between 656 and 3088 nm. A new reference solar spectrum is therefore obtained in this mainly infrared wavelength range (656 to 3088 nm); it uses an absolute preflight calibration performed with the blackbody of the Physikalisch-Technische Bundesanstalt (PTB). An improved correction of temperature effects is also applied to the measurements using in-flight housekeeping temperature data of the instrument. The new solar spectrum (SOLAR-IR) is in good agreement with the ATmospheric Laboratory for Applications and Science (ATLAS 3) reference solar spectrum from 656 nm to about 1600 nm. However, above 1600 nm, it agrees better with solar reconstruction models than with spacecraft measurements. The new SOLAR/SOLSPEC measurement of solar spectral irradiance at about 1600 nm, corresponding to the minimum opacity of the solar photosphere, is 248.08 ± 4.98 mW m-2 nm-1 (1 σ), which is higher than recent ground-based evaluations.

  7. Scattering matrices of martian dust analogs at 488 nm and 647 nm

    NASA Astrophysics Data System (ADS)

    Dabrowska, Dominika D.; Muñoz, Olga; Moreno, Fernando; Ramos, José L.; Martínez-Frías, Jesús; Wurm, Gerhard

    2015-04-01

    We present measurements of the complete scattering matrix as a function of the scattering angle of five martian dust analogs, namely montmorillonite, two palagonite (JSC-1) samples, basalt, and calcite. The measurements are performed at 488 and 647 nm, covering the scattering angle range from 3° to 177°. The experimental scattering matrices are compared with results of Lorenz-Mie calculations performed for the same size distributions and refractive indices as our analog samples. As expected, we find that scattering matrices of realistic polydispersions of dust particles cannot be replaced by such calculated matrices. In contrast, the measured phase functions for our martian dust analogs may be considered a good approximation for martian dust at the studied wavelengths. Further, because of the sensitivity of polarimetry to particle microphysics, spectro-polarimetric observations from the martian surface appear to be a powerful diagnostic tool to infer the composition of the dust in the martian atmosphere. To facilitate the use of the experimental matrices for multiple-scattering calculations with polarization included, we compute the corresponding synthetic scattering matrices based on the measurements and defined in the full angle range from 0° to 180°.

  8. Electron beam inspection of 16nm HP node EUV masks

    NASA Astrophysics Data System (ADS)

    Shimomura, Takeya; Narukawa, Shogo; Abe, Tsukasa; Takikawa, Tadahiko; Hayashi, Naoya; Wang, Fei; Ma, Long; Lin, Chia-Wen; Zhao, Yan; Kuan, Chiyan; Jau, Jack

    2012-11-01

    EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing

  9. Applications of the 308-nm excimer laser in dermatology

    NASA Astrophysics Data System (ADS)

    Farkas, A.; Kemeny, L.

    2006-05-01

    Excimer lasers contain a mixture of a noble inert gas and a halogen, which form excited dimers only in the activated state. High-energy current is used to produce these dimers, which have a very short lifetime, and after their fast dissociation they release the excitation energy through ultraviolet photons. The application of these lasers proved to be successful in medicine, including the field of ophthalmology, cardiology, angiology, dentistry, orthopaedics, and, in recent years, dermatology. For medical purposes, the 193-nm argon fluoride, the 248-nm krypton fluoride, the 351-nm xenon fluoride, and the 308-nm xenon chloride lasers are used. Recently, the 308-nm xenon chloride laser has gained much attention as a very effective treatment modality in dermatological disorders. It was successfully utilized in psoriasis; later, it proved to be useful in handling other lightsensitive skin disorders and even in the treatment of allergic rhinitis. This review summarizes the possible applications of this promising tool in dermatology.

  10. Thin bilayer resists for 193-nm and future photolithography II

    NASA Astrophysics Data System (ADS)

    Hishiro, Yoshi; Hyatt, Michael

    2007-03-01

    Bilayer, Si-containing resists are a technique of interest and a strong candidate to replace chemical vapor deposition (CVD) hardmask processes for small critical dimensions (CDs). Previously, we proposed a very thin film approach using bilayer resists for future lithography, defined the requirements for the resists, and demonstrated 55nm transferred patterns with high aspect ratios using 2-beam interferometer exposure. In this paper, we have demonstrated smaller-than- 60nm transferred patterns with a high numerical aperture (NA) scanner, as well as 45nm and 40nm transferred patterns with a 2-beam system using a 20% Si-containing thin bilayer resist. Immersion scanner exposure and a 35nm CD with 2- beam system were also studied.

  11. High-index resist for 193-nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Matsumoto, Kazuya; Costner, Elizabeth; Nishimura, Isao; Ueda, Mitsuru; Willson, C. Grant

    2008-03-01

    ArF immersion lithography using water as a fluid medium enables production of 45 nm features. Extending immersion lithography to 32 nm or below requires increases in the refractive indices of the lens material, the immersion fluid, and the resist material. However, a material with a high refractive index generally also has high absorbance. In attempt to design a resist with high refractive index and low absorbance, we studied several types of sulfur-containing polymers and determined which sulfur groups increase the refractive index without increasing the absorbance at 193 nm. We describe new thioester and sulfone structures that enable high index with low absorbance. This chemistry has been exploited to produce polymers with a refractive index of 1.8 at 193 nm and an absorbance less than 1.4 μm-1. The compatibility of the sulfur functionality with chemically amplified imaging chemistry was demonstrated by printing at 193 nm.

  12. Electric Field-Assisted Photochemical Water Splitting Should Operate with 287 nm Light.

    PubMed

    Bachler, Vinzenz; Gärtner, Wolfgang

    2016-05-01

    The major photoreaction of water is the homolytic splitting of one O-H bond starting from the 1(1) B1 excited state (λmax = 167 nm). This reaction produces H• and •OH radicals. The combination of two H• atoms leads to the potential energy carrier dihydrogen. However, the energy required to obtain the photoreactive 1(1) B1 electronic state is about 7.4 eV, which cannot be effectively provided by solar radiation. The sun light spectrum on earth comprises the visible and ultraviolet region, but shows vanishing intensity near 7 eV (177.1 nm). This work provides theoretical evidence that the photoreactive 1(1) B1 state of water can be shifted into the ultraviolet (UV-B) light region (≈287 nm) by including explicitly an electric field in the calculations of the water absorption spectrum. To accomplish such bathochromic shift, a large field strength of 3.08 VÅ(-1) is required. The field-dependent excitation energies were calculated by applying the symmetry-adapted cluster configuration interaction (SAC-CI) procedure. Based on this theoretical analysis, we propose that photochemical water splitting can be accomplished by means of 287 nm light provided the water molecule is favorably oriented by an external electric field and is subsequently activated by a reversal of the field orientation. © 2016 The American Society of Photobiology.

  13. 2-D mapping of skin chromophores in the spectral range 500 - 700 nm.

    PubMed

    Jakovels, Dainis; Spigulis, Janis

    2010-03-01

    The multi-spectral imaging technique has been used for distant mapping of in-vivo skin chromophores by analyzing spectral data at each reflected image pixel and constructing 2-D maps of the relative concentrations of oxy-/deoxy-haemoglobin and melanin. Instead of using a broad visible-NIR spectral range, this study focuses on narrowed spectral band 500-700 nm, speeding-up the signal processing procedure. Regression analysis confirmed that superposition of three Gaussians is optimal analytic approximation for the oxy-haemoglobin absorption tabular spectrum in this spectral band, while superposition of two Gaussians fits well for deoxy-haemoglobin absorption and exponential function - for melanin absorption. The proposed approach was clinically tested for three types of in-vivo skin provocations: ultraviolet irradiance, chemical reaction with vinegar essence and finger arterial occlusion. Spectral range 500-700 nm provided better sensitivity to oxy-haemoglobin changes and higher response stability to melanin than two reduced ranges 500-600 nm and 530-620 nm.

  14. Autocatalysis-driven clock reaction II: kinetics of the pentathionate-periodate reaction.

    PubMed

    Xu, Li; Horváth, Attila K

    2014-10-23

    The pentathionate-periodate reaction has been investigated by spectrophotometrically monitoring the total amount of iodine evolved in the presence of phosphoric acid/dihydrogen phosphate buffer at 468 nm. The majority of the main characteristics of the title system is very reminiscent of that found recently in the pentathionate-iodate reaction, a system that led us to classify generally the clock reactions. Along with the pentathionate-iodate reaction the title system is proposed to belong to the autocatalysis-driven clock reactions as well. The kinetic model of the pentathionate-iodate system published recently was implemented by the necessary reactions of periodate to compose a 24-step kinetic model in which the mechanisms of the pentathionate-iodine, pentathionate-iodate, bisulfite-periodate, bisulfite-iodate, iodide-periodate, and the well-known Dushman reactions are combined. A thorough analysis revealed that the direct pentathionate-periodate reaction plays a role only to produce iodide ion via a finite sequence of reactions, and once its concentration reaches a certain level, the reaction is almost exclusively governed by the pentathionate-iodine, the iodide-periodate, and the Dushman reactions. As expected strong catalytic effect of the buffer composition is also found that can readily be explained by its well-known catalytic influence on the Dushman reaction.

  15. Biodegradation of 3,3',4,4'-tetrachlorobiphenyl by Sinorhizobium meliloti NM.

    PubMed

    Wang, Xiaomi; Teng, Ying; Luo, Yongming; Dick, Richard P

    2016-02-01

    A rhizobial strain, Sinorhizobium meliloti NM, could use 3,3',4,4'-tetrachloro-biphenyl (PCB 77) as the sole carbon and energy source for growth in mineral salt medium. The degradation efficiency of PCB 77 by strain NM and the bacterial growth increased with a decrease in PCB 77 concentration (5-0.25mgL(-1)). The addition of secondary carbon sources, phenolic acids and one surfactant influenced PCB 77 degradation, rhizobial growth and biofilm formation. The highest degradation efficiency was observed in the presence of caffeic acid. Benzoate and chloride ions were detected as the PCB 77 metabolites. The up-regulation of benzoate metabolism-related gene expression was also observed using quantitative reverse transcription-polymerase chain reaction. This report is the first to demonstrate Sinorhizobium using coplanar tetrachlorobiphenyl as a sole carbon and energy source, indicating the potential wide benefit to the field of rhizobia-assisted bioremediation.

  16. Core level photoionization on free sub-10-nm nanoparticles using synchrotron radiation

    SciTech Connect

    Meinen, Jan; Leisner, Thomas; Khasminskaya, Svetlana; Eritt, Markus; Antonsson, Egill; Langer, Burkhard; Ruehl, Eckart

    2010-08-15

    A novel instrument is presented, which permits studies on singly charged free nanoparticles in the diameter range from 1 to 30 nm using synchrotron radiation in the soft x-ray regime. It consists of a high pressure nanoparticle source, a high efficiency nanoparticle beam inlet, and an electron time-of-flight spectrometer suitable for probing surface and bulk properties of free, levitated nanoparticles. We show results from x-ray photoelectron spectroscopy study near the Si L{sub 3,2}-edge on 8.2 nm SiO{sub 2} particles prepared in a nanoparticle beam. The possible use of this apparatus regarding chemical reactions on the surface of nanometer-sized particles is highlighted. This approach has the potential to be exploited for process studies on heterogeneous atmospheric chemistry.

  17. The collision-free photochemistry of methyl azide at 157 nm: Mechanism and energy release

    NASA Astrophysics Data System (ADS)

    Quinto-Hernandez, Alfredo; Lee, Shih-Huang; Wodtke, Alec M.

    2017-08-01

    Synchrotron radiation VUV-photoionization based photofragment translational spectroscopy was used to identify the primary and secondary photodissociation reactions of methyl azide (CH3N3) at 157 nm under collision-free conditions. Two primary dissociation channels are identified, leading to CH3 + N3 (the radical channel) and CH3N + N2 (the molecular elimination channel). The last channel is the major dissociation pathway, but unlike work at longer photolysis wavelengths, here, the radical channel exclusively produces the higher energy isomer cyclic-N3. Product time-of-flight data for both channels were obtained and compared with earlier work on methyl azide photochemistry at 193 nm based on electron impact ionization, allowing us to estimate a product branching ratio Φ/CH3-N3 ΦCH3N-N2 =2.3/% ±0.6 % 97.7 % ±0.6 % .

  18. VUV radiometry below 100 nm: the high-power hydrogen arc as a standard source of continuum radiation between 53 nm and 92 nm.

    PubMed

    Behringer, K; Thoma, P

    1979-08-01

    A stationary hydrogen arc discharge may be used as a standard source of radiation in the VUV below 100 nm. The Lyman resonance continuum is used, the cross sections of which are theoretically well known. The method described is based on optically thin radiation, requiring high plasma temperatures and an effective helium gas separation in the arc. The investigations demonstrate that, in appropriate experimental conditions, the plasma is indeed transparent down to the onset of the He ground-state absorption. Above that, the VUV spectral radiance can be predicted within less than 15% uncertainty from conventional plasma diagnostics. For a first application, the He continuum has been measured between 65 nm and 92 nm. The consistency of these results with theoretical calculations confirms the validity of the concept presented.

  19. Gain-switched 311-nm Ti:Sapphire laser might be a potential treatment modality for atopic dermatitis.

    PubMed

    Choi, Sun Young; Oh, Chang Taek; Kwon, Tae-Rin; Kwon, Hyun Jung; Choi, Eun Ja; Jang, Yu-Jin; Kim, Hye Sung; Chu, Hong; Mun, Seog Kyun; Kim, Myeung Nam; Kim, Beom Joon

    2016-09-01

    Phototherapy with 311-nm narrowband-UVB (NBUVB) is an effective adjuvant treatment modality for atopic dermatitis (AD). In this study, we evaluated the therapeutic effect of the newly developed gain-switched 311-nm Ti:Sapphire laser device using a NC/Nga mouse AD model. A total number of 50 mice were used in this study. Atopic dermatitis (AD) was induced in mice by exposure to Dermatophagoides farina. These, NC/Nga mice were then treated with conventional 311-nm NBUVB or the newly developed gain-switched 311-nm Ti:Sapphire laser. The clinical features, dermatitis severity scores, and scratching behavior were assessed. In addition, serologic analyses including inflammatory cytokines and histological analyses were performed. Gain-switched 311-nm Ti:Sapphire laser improved the AD-like skin lesions, severity, and symptoms of AD in the NC/Nga mouse model. This new laser also modulated the immune response found in the AD model, including hyper-IgE, upregulated Th2 cytokines, and the Th2-mediated allergic inflammatory reaction. Gain-switched 311-nm Ti:Sapphire laser shows therapeutic promise via an immune-modulation mechanism in an AD mouse model. These data suggest that gain-switched 311-nm Ti:Sapphire laser may be useful as a targeted phototherapy modality for AD.

  20. Optimal design of optical length in low turbidity measurement system with wavelength 1310 nm and 1550 nm

    NASA Astrophysics Data System (ADS)

    Cao, Hui-bin; Liu, Jian-guo; Gui, Hua-qiao; Wang, Jie; Wang, Huan-qin

    2014-11-01

    To meet the need of long distance transmission in low turbidity measurement system for low-loss, a new optical structure with wavelength 1310nm and 1550nm as the incident light is employed. In this research, experiments have been done for different optical length of the two wavelength light sources. The results show that: first, the transmitted light intensity has big difference under the circumstance of same concentration and optical length, though the loss has no remarkable difference transmitted in optical fiber between 1310nm and 1550nm. Second, the optimized optical length for better absorbance has been determined for 1310nm and 1550nm and it is irrelevant to the incident intensity. Third, the intensity of the two transmitted light decreases exponentially with the increase of optical length. For example, when the range of the optical length of 1310nm is 0.5mm-2mm, the transmitted intensity is about 60%-79% and the absorbance is 0.12-0.42. The transmitted intensity is about 5%-44%. When the range of the optical length of 1550nm is 0.5mm-2mm and the absorbance is still 0.12-0.42. Our experimental data provides the basis both for the optical length selection of these two light sources in water and the near-infrared spectral wavelength selection.

  1. Variation of cell spreading on TiO2 film modified by 775 nm and 388 nm femtosecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Tsukamoto, M.; Shinonaga, T.; Sato, Y.; Chen, P.; Nagai, A.; Hanawa, T.

    2014-03-01

    Titanium (Ti) is one of the most used biomaterials in metals. However, Ti is typically artificial materials. Thus, it is necessary for improving the biocompatibility of Ti. Recently, coating of the titanium dioxides (TiO2) film on Ti plate has been proposed to improve biocompatibility of Ti. We have developed coating method of the film on Ti plate with an aerosol beam. Periodic structures formation on biomaterials was also a useful method for improving the biocompatibility. Direction of cell spreading might be controlled along the grooves of periodic microstructures. In our previous study, periodic nanostructures were formed on the film by femtosecond laser irradiation at fundamental wave (775 nm). Period of the periodic nanostructures was about 230 nm. In cell test, cell spreading along the grooves of the periodic nanostructures was observed although it was not done for the film without the periodic nanostructures. Then, influence of the period of the periodic nanostructures on cell spreading has not been investigated yet. The period might be changed by changing the laser wavelength. In this study, the periodic nanostructures were created on the film with femtosecond laser at 775nm and 388 nm, respectively. After cell test, cell spreading along the grooves of the periodic nanostructures was observed on 775 nm and 388nm laser irradiated areas. Distribution of direction of cell spreading on laser irradiated area was also examined. These results suggested that controlling the cell spreading on periodic nanostructures with period of 230 nm was better than that with period of 130 nm.

  2. A continuous wave 10 W cryogenic fiber amplifier at 1015 nm and frequency quadrupling to 254 nm.

    PubMed

    Steinborn, R; Koglbauer, A; Bachor, P; Diehl, T; Kolbe, D; Stappel, M; Walz, J

    2013-09-23

    A stable, continuous wave, single frequency fiber amplifier system at 1015 nm with 10 W output power is presented. It is based on a large mode double clad fiber cooled to liquid nitrogen temperature. The amplified light is frequency quadrupled to 254 nm and used for spectroscopy of the 6¹S → 6³P transition in mercury.

  3. Wavelength dependence on the forensic analysis of glass by nanosecond 266 nm and 1064 nm laser induced breakdown spectroscopy

    SciTech Connect

    Cahoon, Erica M.; Almirall, Jose R.

    2010-05-01

    Laser induced breakdown spectroscopy can be used for the chemical characterization of glass to provide evidence of an association between a fragment found at a crime scene to a source of glass of known origin. Two different laser irradiances, 266 nm and 1064 nm, were used to conduct qualitative and quantitative analysis of glass standards. Single-pulse and double-pulse configurations and lens-to-sample-distance settings were optimized to yield the best laser-glass coupling. Laser energy and acquisition timing delays were also optimized to result in the highest signal-to-noise ratio corresponding to the highest precision and accuracy. The crater morphology was examined and the mass removed was calculated for both the 266 nm and 1064 nm irradiations. The analytical figures of merit suggest that the 266 nm and 1064 nm wavelengths are capable of good performance for the forensic chemical characterization of glass. The results presented here suggest that the 266 nm laser produces a better laser-glass matrix coupling, resulting in a better stoichiometric representation of the glass sample. The 266 nm irradiance is therefore recommended for the forensic analysis and comparison of glass samples.

  4. Modeling the distributed gain of single--(1050 or 1410 nm) and dual-wavelength--(800 + 1050 nm or 800 + 1410 nm) pumped thulium-doped fiber amplifiers.

    PubMed

    Floridia, Claudio; Carvalho, M T; Lüthi, S R; Gomes, A S L

    2004-09-01

    The distributed gain of single- and dual-wavelength-pumped thulium-doped fiber amplifiers is modeled. The excellent agreement between the model and coherent optical frequency domain reflectometry measurements enables us to estimate intrinsic loss, branching ratios of fluorescence originating from the 3H4 level, and cross sections of upconversion pumping at 1050 and 1410 nm for the Tm3+ ions in the fiber. With the branching ratios obtained it is possible to describe induced signal absorption when pumping at 800 nm.

  5. Transport of triplet excitons along continuous 100 nm polyfluorene chains

    DOE PAGES

    Xi, Liang; Bird, Matthew; Mauro, Gina; ...

    2014-12-03

    Triplet excitons created in poly-2,7-(9,9-dihexyl)fluorene (pF) chains with end trap groups in solution are efficiently transported to and captured by the end groups. The triplets explore the entire lengths of the chains, even for ~100 nm long chains enabling determination of the completeness of end capping. The results show that the chains continuous: they may contain transient barriers or traps, such as those from fluctuations of dihedral angles, but are free of major defects that stop motion of the triplets. Quantitative determinations are aided by the addition of a strong electron donor, TMPD, which removes absorption bands of the end-trappedmore » triplets. For chains having at least one end trap, triplet capture is quantitative on the 1 µs timescale imposed by the use of the donor. Fractions of chains having no end traps were 0.15 for pF samples with anthraquinone (AQ) end traps and 0.063 with naphthylimide (NI) end traps. These determinations agreed with measurements by NMR for short (<40 polymer repeat units (PRU)) chains, where NMR determinations are accurate. The results find no evidence for traps or barriers to transport of triplets, and places limits on the possible presence of defects as impenetrable barriers to less than one per 300 PRU. The present results present a paradigm different from the current consensus, derived from observations of singlet excitons, that conjugated chains are divided into “segments,” perhaps by some kind of defects. For the present pF chains, the segmentation either does not apply to triplet excitons or is transient so that the defects are healed or surmounted in times much shorter than 1 µs. Triplets on chains without end trap groups transfer to chains with end traps on a slower time scale. Rate constants for these bimolecular triplet transfer reactions were found to increase with the length of the accepting chain, as did rate constants for triplet transfer to the chains from small molecules like biphenyl. As a

  6. Transport of triplet excitons along continuous 100 nm polyfluorene chains

    SciTech Connect

    Xi, Liang; Bird, Matthew; Mauro, Gina; Asaoka, Sadayuki; Cook, Andrew R.; Chen, Hung -Cheng; Miller, John R.

    2014-12-03

    Triplet excitons created in poly-2,7-(9,9-dihexyl)fluorene (pF) chains with end trap groups in solution are efficiently transported to and captured by the end groups. The triplets explore the entire lengths of the chains, even for ~100 nm long chains enabling determination of the completeness of end capping. The results show that the chains continuous: they may contain transient barriers or traps, such as those from fluctuations of dihedral angles, but are free of major defects that stop motion of the triplets. Quantitative determinations are aided by the addition of a strong electron donor, TMPD, which removes absorption bands of the end-trapped triplets. For chains having at least one end trap, triplet capture is quantitative on the 1 µs timescale imposed by the use of the donor. Fractions of chains having no end traps were 0.15 for pF samples with anthraquinone (AQ) end traps and 0.063 with naphthylimide (NI) end traps. These determinations agreed with measurements by NMR for short (<40 polymer repeat units (PRU)) chains, where NMR determinations are accurate. The results find no evidence for traps or barriers to transport of triplets, and places limits on the possible presence of defects as impenetrable barriers to less than one per 300 PRU. The present results present a paradigm different from the current consensus, derived from observations of singlet excitons, that conjugated chains are divided into “segments,” perhaps by some kind of defects. For the present pF chains, the segmentation either does not apply to triplet excitons or is transient so that the defects are healed or surmounted in times much shorter than 1 µs. Triplets on chains without end trap groups transfer to chains with end traps on a slower time scale. Rate constants for these bimolecular triplet transfer reactions were found to increase with the length of the accepting chain, as did rate constants for triplet transfer to the chains from small molecules like biphenyl. As a result, a

  7. Efficient single-pass third-harmonic generation from 1560 nm to 520 nm for pumping doubly-resonant OPO

    NASA Astrophysics Data System (ADS)

    Zhang, Kong; Wang, Junmin

    2017-08-01

    A ~545 mW single-frequency tunable 520 nm green laser has been demonstrated using a periodically-poled potassium titanyl phosphate (PPKTP) bulk crystal based on single-pass third-harmonic generation (THG) of a 1560 nm laser via single-pass second-harmonic generation (SHG) followed by single-pass sum-frequency generation (SFG). In single-pass SHG, two cascaded periodically-poled magnesium-oxide-doped lithium niobate (PPMgO:LN) crystals were used, and ~3.5 W 780.25 nm doubled laser output is produced, corresponding to maximum doubling efficiency of 26.8%. The system can provide a pump source (520 nm) for an optical parametric oscillator for two-color entangled continuous-variable optical field generation at 1560 and 780 nm and two-color local oscillators for homodyne detection.

  8. Sub-30-nm defect removal on EUV substrates

    NASA Astrophysics Data System (ADS)

    Rastegar, Abbas; Eichenlaub, Sean; Kadaksham, Arun John; House, Matt; Cha, Brian; Yun, Henry

    2009-01-01

    Naturally occurring sub 30 nm defects on quartz and Low Thermal Expansion Material (LTEM) substrates were characterized by using Atomic Force Microscope(AFM). Our data indicates that a majority of defects on the incoming substrate are hard defects including large, flat particles with a height less than 5 nm, tiny particles with a size of 10 nm to 30 nm SEVD and pits with a depth of about 9 nm. All the soft particles added by handling with sizes of >50 nm can be removed with a single cleaning process. At least four cleaning cycles are required to remove all of the remaining embedded particles. However, after particle removal in their initial location a shallow pit remains. Based on detailed characterization of defect and surface by AFM, we propose that these hard particles are added during the glass polishing step and therefore it is important to revisit the glass Chemical Mechanical Polishing (CMP) processes and optimize them for defect reduction. A qualitative value for particle removal efficiency (PRE) of >99% was obtained for 20 nm Poly Styrene Latex Sphere (PSL) deposited particles on surface of glass.

  9. EUV reticle inspection with a 193nm reticle inspector

    NASA Astrophysics Data System (ADS)

    Broadbent, William; Inderhees, Gregg; Yamamoto, Tetsuya; Lee, Isaac; Lim, Phillip

    2013-06-01

    The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 - 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM - blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system - the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.

  10. Response of Cloud Condensation Nuclei (> 50 nm) to changes in ion-nucleation

    NASA Astrophysics Data System (ADS)

    Pedersen, J. O.; Enghoff, M. B.; Svensmark, H.

    2012-12-01

    The role of ionization in the formation of clouds and aerosols has been debated for many years. A body of evidence exists that correlates cloud properties to galactic cosmic ray ionization; however these results are still contested. In recent years experimental evidence has also been produced showing that ionization can promote the nucleation of small aerosols at atmospheric conditions. The experiments showed that an increase in ionization leads to an increase in the formation of ultrafine aerosols (~3 nm), but in the real atmosphere such small particles have to grow by coagulation and condensation to become cloud condensation nuclei (CCN) in order to have an effect on clouds. However, numerical studies predict that variations in the count of ultra-fine aerosols will lead only to an insignificant change in the count of CCN. This is due to 1) the competition between the additional ultra-fine aerosols for the limited supply of condensable gases leading to a slower growth and 2) the increased loss rates of the additional particles during the longer growth-time. We investigated the growth of aerosols to CCN sizes using an 8 m3 reaction chamber made from electro-polished stainless steel. One side was fitted with a Teflon foil to allow ultraviolet light to illuminate the chamber, which was continuously flushed with dry purified air. Variable concentrations of water vapor, ozone, and sulfur dioxide could be added to the chamber. UV-lamps initiated photochemistry producing sulfuric acid. Ionization could be enhanced with two Cs-137 gamma sources (30 MBq), mounted on each side of the chamber. Figure 1 shows the evolution of the aerosols, following a nucleation event induced by the gamma sources. Previous to the event the aerosols were in steady state. Each curve represents a size bin: 3-10 nm (dark purple), 10-20 nm (purple), 20-30 nm (blue), 30-40 nm (light blue), 40-50 nm (green), 50-60 nm (yellow), and 60-68 nm (red). Black curves show a ~1 hour smoothing. The initial

  11. A comparison of corneal cellular responses after 213-nm compared with 193-nm laser photorefractive keratectomy in rabbits.

    PubMed

    Sanders, Talia; Pujara, Tarak; Camelo, Serge; Lai, Ching Tat; Van Saarloos, Paul; Beazley, Lyn; Rodger, Jennifer

    2009-05-01

    Corneal refractive surgery is typically performed using a 193-nm excimer laser. However, a recently developed 213-nm solid-state (5th harmonic) Nd:YAG laser presents some practical and user safety advantages, although the biological impact of using this wavelength remains poorly characterized. Here, we provide in vivo and in vitro comparisons of the corneal cellular outcomes after irradiation with 213 and 193 nm wavelengths. New Zealand White rabbits underwent photorefractive keratectomy with -5 diopters and a 6.5-mm optical zone and studied at time points up to 1 year. The development of haze was examined ophthalmologically and by detecting myofibroblasts immunohistochemically. Cell death was quantified using a terminal deoxynucleotidyl transferase-dUTP nick end labeling (TUNEL) assay, and the number of stromal keratocytes undergoing apoptosis estimated histologically. Superoxide dismutase activity was estimated in vitro by enzyme-linked immunosorbent assay in irradiated rabbit corneal keratocytes. Our results demonstrate subtle differences in the cellular outcomes after irradiation with 213- and 193-nm lasers, despite similar degrees of corneal haze developing in both treatment groups. In vivo, the 213-nm laser results in more stable stromal cell numbers, implying a more predictable ablation outcome. In vitro, higher levels of superoxide dismutase in corneal keratocytes irradiated with 213 nm compared with 193 nm wavelengths suggest a better endogenous protection against free radicals induced by laser surgery. The more favorable cellular responses after irradiation with 213 nm compared with 193 nm wavelengths are consistent with good clinical outcomes previously reported. Ablation with a 213 nm wavelength may result in better wound healing, leading to a more reliable correction of refractive errors.

  12. Photomask technology for 32nm node and beyond

    NASA Astrophysics Data System (ADS)

    Hikichi, Ryugo; Ishii, Hiroyuki; Migita, Hidekazu; Kakehi, Noriko; Shimizu, Mochihiro; Takamizawa, Hideyoshi; Nagano, Tsugumi; Hashimoto, Masahiro; Iwashita, Hiroyuki; Suzuki, Toshiyuki; Hosoya, Morio; Ohkubo, Yasushi; Ushida, Masao; Mitsui, Hideaki

    2008-05-01

    193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. At the 32nm technology-node, the performance of photomasks, not only phase-shift masks but also binary masks, needs to be improved, especially in "resolution" and "CD accuracy". To meet sub-100nm resolution with high precision, further thinning of resist thickness will be needed. To improve CD performance, we have designed a new Cr-on-glass (COG) blank for binary applications, having OD-3 at 193nm. This simple Cr structure can obtain superior performance with the conventional mask-making process. Since the hardmask concept is one of the alternative solutions, we have also designed a multilayered binary blank. The new COG blank (NTARC) was fully dry-etched with over 25% shorter etching time than NTAR7, which is a conventional COG blank. Thinner resist (up to 200nm) was possible for NTARC. NTARC with 200nm-thick resist showed superior resolution and CD linearity in all pattern categories. On the other hand, the multilayered binary stack gives us a wide etching margin for several etching steps. Super thin resist (up to 100nm) was suitable by using a Cr-hardmask on a MoSi-absorber structure (COMS). The COMS blanks showed superior performance, especially in tiny clear patterns, such as the isolated hole pattern. We confirmed that these new photomask blanks, NTARC and COMS, will meet the requirements for 32nm-node and beyond, for all aspects of mask-making.

  13. 80 nm tunable DBR-free semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Yang, Z.; Albrecht, A. R.; Cederberg, J. G.; Sheik-Bahae, M.

    2016-07-01

    We report a widely tunable optically pumped distributed Bragg reflector (DBR)-free semiconductor disk laser with 6 W continuous wave output power near 1055 nm when using a 2% output coupler. Using only high reflecting mirrors, the lasing wavelength is centered at 1034 nm and can be tuned up to a record 80 nm by using a birefringent filter. We attribute such wide tunability to the unique broad effective gain bandwidth of DBR-free semiconductor disk lasers achieved by eliminating the active mirror geometry.

  14. High-Performance 1645-nm Er: YAG Laser

    DTIC Science & Technology

    2007-09-25

    laser set-up is shown in Figure 1. An IPG Photonics TEM00 erbium fiber laser , which provided 20 W cw power at 1532.4 nm, was used in these experi...output of the resonantly fiber - laser -pumped Er:AYG laser at 1645 nm using 0.25% doped crystal out- performed the 0.5% doped crystal. In addition to the...the advantages of small quantum defect and small thermal load for the laser materials. High-brightness erbium fiber pump lasers at 1532 nm not only

  15. EUV mask inspection study for sub-20nm device

    NASA Astrophysics Data System (ADS)

    Shin, Inkyun; Yoon, Gisung; Na, Ji Hoon; Chung, Paul D. H.; Jeon, Chan-Uk

    2012-11-01

    Reflected light inspection has been used to inspect EUVL mask which consists of multi layers and metal absorber. However, sub-wavelength half pitch patterns and reflected inspection make unprecedented phenomenon like tone inversion. These lead EUV inspection more difficult in detectability and inspectability for separating out defects and false. In this study, we report the evaluation result of inspection dependency of illumination conditions like OAI(Off-Axis Illumination), sigma and polarization for sub-20nm EUVL PDM(programmed defect mask). With inspection of sub- 20nm device mask, we finally address the inspection feasibility for sub-20nm device and the future direction of inspection technology.

  16. Circumfacular Regions in Ca II 854.2 nm

    NASA Astrophysics Data System (ADS)

    Pietarila, Anna; Harvey, J.

    2012-05-01

    Active regions appear bright in Ca II 854.2 nm line core intensity while the surrounding areas, circumfacular regions, are darker than the active region or the quiet Sun. We use SOLIS VSM Ca II 854.2 nm data (high spectral resolution Stokes I and V profiles as well as photospheric and chromospheric LOS magnetograms) to study the relationship between the atmospheric dynamics, LOS magnetic field stratification and detailed spectral line properties, e.g., line bisectors and Stokes V asymmetries. The presence of circumfacular regions, magnetic canopies and flows may explain the solar cycle variation of Sun-as-star Ca II 854.2 nm bisectors.

  17. UV intensity measurement for a novel 222 nm excimer lamp using chemical actinometer

    NASA Astrophysics Data System (ADS)

    Zhang, J.-Y.; Boyd, I. W.; Esrom, H.

    1997-02-01

    Photohydrate of uridine in neutral aqueous solution is used for the determination of the ultraviolet (UV) intensity of a novel excimer lamp, employing a dielectric barrier discharge in krypton chloride to provide intense narrow band radiation at λ=222 nm (KrCl*). The intensity measurement is based on UV spectral absorption data. A photokinetic model is presented for the reaction which is generally applicable for any photochemical system. The electrical power dependence of the UV intensity generated as well as the efficiency of the lamps was investigated.

  18. Partially Oxidized Sub-10 nm MnO Nanocrystals with High Activity for Water Oxidation Catalysis

    PubMed Central

    Jin, Kyoungsuk; Chu, Arim; Park, Jimin; Jeong, Donghyuk; Jerng, Sung Eun; Sim, Uk; Jeong, Hui-Yun; Lee, Chan Woo; Park, Yong-Sun; Yang, Ki Dong; Kumar Pradhan, Gajendra; Kim, Donghun; Sung, Nark-Eon; Hee Kim, Sun; Nam, Ki Tae

    2015-01-01

    The oxygen evolution reaction (OER) is considered a major bottleneck in the overall water electrolysis process. In this work, highly active manganese oxide nano-catalysts were synthesized via hot injection. Facile surface treatment generated Mn(III) species on monodisperse 10 nm MnO nanocrystals (NCs). Size dependency of MnO NCs on OER activity was also investigated. Surprisingly, the partially oxidized MnO NCs only required 530 mV @ 5 mA cm−2 under near neutral conditions. PMID:25998696

  19. Grafting onto poly(ethylene terephthalate) driven by 172 nm UV light

    NASA Astrophysics Data System (ADS)

    Zhu, Zhengmao; Kelley, Michael J.

    2005-10-01

    The reactivity of the surface of poly(ethylene terephthalate) (PET) film under 172 nm UV irradiation (xenon excimer lamp) towards nitrogen-borne 1-octene, n-nonane and heptafluorodecene vapor was investigated. Materials receiving from 0 to 24 J/cm 2 of UV were examined by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (ToF/SIMS), water and mineral oil contact angle measurement and atomic force microscopy (AFM). A uniform nanoscale layer developed on PET surface attributed to the grafting reaction between photolytically-produced polymer radicals and vapor phase molecules.

  20. Influence of humidity on photochemical ozone generation with 172nm xenon excimer lamps

    NASA Astrophysics Data System (ADS)

    Salvermoser, M. J.; Kogelschatz, U.; Murnick, D. E.

    2009-08-01

    The reaction kinetics of photochemical ozone (O{3}) generation in humid air and oxygen (O{2}) using efficient, narrow band vacuum ultra violet (VUV) 172 nm xenon excimer lamps is discussed. Trace amounts of water (H{2}O) vapor in the process gas leads to hydroxyl (OH) and hydroperoxy (HO{2}) radical formation. These radicals drive a catalytic O{3} destruction cycle limiting O{3} saturation concentration. This catalytic O{3} destruction cycle was included into a quantitative kinetic model describing photochemical O{3} production. Experimental O{3} saturation concentrations obtained with coaxial VUV driven photochemical O{3} generators compare satisfactorily with the models predictions.

  1. Catalysis of Photochemical Reactions.

    ERIC Educational Resources Information Center

    Albini, A.

    1986-01-01

    Offers a classification system of catalytic effects in photochemical reactions, contrasting characteristic properties of photochemical and thermal reactions. Discusses catalysis and sensitization, examples of catalyzed reactions of excepted states, complexing ground state substrates, and catalysis of primary photoproducts. (JM)

  2. Anaphylaxis-Like Reactions

    MedlinePlus

    ... Home Conditions Anaphylaxis Anaphylaxis-Like Reactions Anaphylaxis-Like Reactions Make an Appointment Refer a Patient Ask a ... exposed to a foreign substance, some people suffer reactions identical to anaphylaxis, but no allergy (IgE antibody) ...

  3. Catalysis of Photochemical Reactions.

    ERIC Educational Resources Information Center

    Albini, A.

    1986-01-01

    Offers a classification system of catalytic effects in photochemical reactions, contrasting characteristic properties of photochemical and thermal reactions. Discusses catalysis and sensitization, examples of catalyzed reactions of excepted states, complexing ground state substrates, and catalysis of primary photoproducts. (JM)

  4. Anaphylaxis-Like Reactions

    MedlinePlus

    ... Home Conditions Anaphylaxis Anaphylaxis-Like Reactions Anaphylaxis-Like Reactions Make an Appointment Refer a Patient Ask a ... exposed to a foreign substance, some people suffer reactions identical to anaphylaxis, but no allergy (IgE antibody) ...

  5. Efficient laser operation of Nd3+:Lu2O3 at various wavelengths between 917 nm and 1463 nm

    NASA Astrophysics Data System (ADS)

    von Brunn, P.; Heuer, A. M.; Fornasiero, L.; Huber, G.; Kränkel, C.

    2016-08-01

    Even though the first Nd3+-doped sesquioxide lasers have been realized more than 50 years ago, up to now no reports on efficient laser operation of Nd3+:doped sesquioxides can be found. In this work, we review the favorable spectroscopic properties of the sesquioxide Nd3+:Lu2O3 in terms of ground state absorption, stimulated emission, and excited state absorption cross sections as well as the upper level lifetime. Making use of these properties, we achieved efficient laser performance on eight different laser transitions in the wavelength range between 917 nm and 1463 nm under Ti:sapphire laser pumping using state-of-the-art HEM-grown Nd3+:Lu2O3 crystals with good optical quality. At the strongest transition around 1076 nm we determined a slope efficiency of 69%, which represents the highest efficiency ever obtained for a Nd3+-doped sesquioxide. Furthermore, we could generate watt level output powers and high slope efficiencies for seven other transitions. Lasers at 917 nm, 1053 nm, 1108 nm and 1463 nm were realized for the first time and the latter represents one of the longest laser wavelengths obtained on the 4F3/2  →  4I13/2 transition in Nd3+-doped materials.

  6. RadNet Air Data From Navajo Lake, NM

    EPA Pesticide Factsheets

    This page presents radiation air monitoring and air filter analysis data for Navajo Lake, NM from EPA's RadNet system. RadNet is a nationwide network of monitoring stations that measure radiation in air, drinking water and precipitation.

  7. 76 FR 76801 - New Mexico Disaster #NM-00024

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-08

    ... Mexico Disaster NM-00024 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY: This is a... New Mexico (FEMA- 4047-DR), dated 11/23/2011. Incident: Flooding. Incident Period: 08/19/2011 through...

  8. Northern Edge Navajo Casino, Fruitland, NM: NN0030343

    EPA Pesticide Factsheets

    NPDES Permit and Fact Sheet explaining EPA's action under the Clean Water Act to issue NPDES Permit No. NN0030343) to the Navajo Tribal Utility Authority Northern Edge Navajo Casino Wastewater Treatment Facility, 2752 Indian Service Road 36, Fruitland, NM.

  9. Compact frequency-quadrupled pulsed 1030nm fiber laser

    NASA Astrophysics Data System (ADS)

    McIntosh, Chris; Goldberg, Lew; Cole, Brian; DiLazaro, Tom; Hays, Alan D.

    2016-03-01

    A compact 1030nm fiber laser for ultraviolet generation at 257.5nm is presented. The laser employs a short length of highly-doped, large core (20μm), coiled polarization-maintaining ytterbium-doped double-clad fiber pumped by a wavelength-stabilized 975nm diode. It is passively Q-switched via a Cr4+:YAG saturable absorber and generates 2.4W at 1030nm in a 110μJ pulse train. Lithium triborate (LBO) and beta-barium borate (BBO) are used to achieve 325mW average power at the fourth harmonic. The laser's small form factor, narrow linewidth and modest power consumption are suitable for use in a man-portable ultraviolet Raman explosives detection system.

  10. Narrow linewidth Yb-doped fiber laser at 1120 nm.

    PubMed

    Xiaojuan, Liu; Shenggui, Fu; Liping, Guo; Kezhen, Han

    2013-03-20

    A 974 nm laser diode pumped 1120 nm ytterbium (Yb)-doped fiber laser with all fiber components has been experimentally demonstrated. The resonator is composed of a normal single-mode Yb-doped fiber 1 m long and a pair of fiber Bragg gratings. Up to 21.6 mW of continuous-wave output power is generated when the launched pump power is 161 mW with an optical-to-optical conversion efficiency of 13.4%. The central wavelength is 1120.89 nm with a linewidth as narrow as 0.02 nm. Additionally, a similar fiber laser with a 2 m long gain medium displays a broadened linewidth. The results of the two fiber lasers are compared and discussed in the paper.

  11. Diffuse optical spectroscopy of breast tissue extended to 1100 nm

    NASA Astrophysics Data System (ADS)

    Taroni, Paola; Bassi, Andrea; Comelli, Daniela; Farina, Andrea; Cubeddu, Rinaldo; Pifferi, Antonio

    2009-09-01

    The feasibility of in vivo measurements in the range of 1000 to 1100 nm and the potential benefits of operation in that wavelength range for diagnostic applications are investigated. To this purpose, an existing system for time-resolved diffuse spectroscopy is modified to enable in vivo studies to be carried out continuously from 600 to 1100 nm. The optical characterization of collagen powder is extended to 1100 nm and an accurate measurement of the absorption properties of lipid is carried out over the entire spectral range. Finally, the first in vivo absorption and scattering spectra of breast tissue are measured from 10 healthy volunteers between 600 and 1100 nm and tissue composition is evaluated in terms of blood parameters and water, lipid, and collagen content using a spectrally constrained global fitting procedure.

  12. RadNet Air Data From Albuquerque, NM

    EPA Pesticide Factsheets

    This page presents radiation air monitoring and air filter analysis data for Albuquerque, NM from EPA's RadNet system. RadNet is a nationwide network of monitoring stations that measure radiation in air, drinking water and precipitation.

  13. RadNet Air Data From Carlsbad, NM

    EPA Pesticide Factsheets

    This page presents radiation air monitoring and air filter analysis data for Carlsbad, NM from EPA's RadNet system. RadNet is a nationwide network of monitoring stations that measure radiation in air, drinking water and precipitation.

  14. 980 nm narrow linewidth Yb-doped phosphate fiber laser

    NASA Astrophysics Data System (ADS)

    Li, Pingxue; Yao, Yifei; Hu, Haowei; Chi, Junjie; Yang, Chun; Zhao, Ziqiang; Zhang, Guangju

    2014-12-01

    A narrow-linewidth ytterbium (Yb)-doped phosphate fiber laser based on fiber Bragg grating (FBG) operating around 980 nm is reported. Two different kinds of cavity are applied to obtain the 980 nm narrow-linewidth output. One kind of the cavity consists of a 0.35 nm broadband lindwidth high-reflection FBG and the Yb-doped phosphate fiber end with 0° angle, which generates a maximum output power of 25 mW. The other kind of resonator is composed of a single mode Yb-doped phosphate fiber and a pair of FBGs. Over 10.7 mW stable continuous wave are obtained with two longitudinal modes at 980 nm. We have given a detailed analysis and discussion for the results.

  15. Process and Device Simulation of 65 nm NMOS

    NASA Astrophysics Data System (ADS)

    Ng, K. M.; Ong, B. H.

    2011-03-01

    In this paper, a 65 nm N-type Metal Oxide Semiconductor (NMOS) with 1.36 nm physical gate oxide, 34.5 nm gate length, ultra shallow junction and threshold voltage of 0.185 V have been designed using Silvaco Technology Computer Aided Design (TCAD) software. The physical and electrical properties of simulated results are in line with International Roadmap Semiconductor Standard (ITRS) guideline for 65nm technology node. From the aspect of processing, influencing parameters such as (i) gate oxide thickness, (ii) concentration of source/drain, (iii) energy level of source/drain, and (iv) substrate doping impurity are studied in order to investigate individual effects towards device workability. Limits of these processing parameters also have been examined and reported.

  16. The Missing Solar Irradiance Spectrum: 1 to 7 nm

    NASA Astrophysics Data System (ADS)

    Sojka, J. J.; Lewis, M.; David, M.; Schunk, R. W.; Woods, T. N.; Eparvier, F. G.; Warren, H. P.

    2015-12-01

    During large X-class flares the Earth's upper atmospheric E-region responds immediately to solar photons in the 1 to 7 nm range. The response can change the E-region density by factors approaching 10, create large changes in conductivity, and plague HF communications. GOES-XRS provide 0.1 to 0.8 nm and a 0.05 to 0.4 nm integral channels; SOHO-SEM provided a 0 to 50 nm irradiance; TIMED and SORCE-XPS diode measurements also integrated down to 0.1 nm; and most recently SDO-EVE provided a 0.1 to 7 nm irradiance. For atmospheric response to solar flares the cadence is also crucial. Both GOES and SDO provided integral measurements at 10 seconds or better. Unfortunately these measurements have failed to capture the 1 to 7 nm spectral changes that occur during flares. It is these spectral changes that create the major impact since the ionization cross-section of the dominant atmospheric species, N2 and O2, both contain step function changes in the cross-sections. Models of the solar irradiance over this critical wavelength regime have suffered from the need to model the spectral variability based on incomplete measurements. The most sophisticated empirical model FISM [Chamberlin et al., 2008] used 1 nm spectral binning and various implementations of the above integral measurements to describe the 1 to 7 nm irradiance. Since excellent solar observations exist at other wavelengths it is possible to construct an empirical model of the solar atmosphere and then use this model to infer the spectral distribution at wavelengths below 5 nm. This differential emission measure approach has been used successfully in other contexts [e.g., Warren, 2005, Chamberlin et al., 2009]. This paper contrasts the broadband versus spectrally resolved descriptions of the incoming irradiance that affects the upper atmospheric E-layer. The results provide a prescription of what wavelength resolution would be needed to adequately measure the incoming solar irradiance in the 1 to 7 nm range.

  17. 14/16nm FinFET Radiation Response Characterization

    DTIC Science & Technology

    2016-03-17

    14/16nm FinFET Radiation Response Characterization Jeffrey Kauppila1, Hui Jiang1, Hangfang Zhang1, Thiago Assis1, T. Daniel Loveless2, Tim...USA Contact Author Email: j.kauppila@vanderbilt.edu Abstract: Radiation response characterization test chips have been designed and...CMOS to the sub-20nm node has introduced the disruptive 3D FinFET geometry to an already complex radiation hardened design space. This work presents

  18. Investigation of a Pulsed 1550 nm Fiber Laser System

    DTIC Science & Technology

    2015-12-15

    14. ABSTRACT There is a strong need for a pulsed laser system at eye safe wavelengths for illuminator applications . High power pulsed 1550 nm fiber...system at eye safe wavelengths for illuminator applications . High power pulsed 1550 nm fiber lasers systems are able to generate, shaped, pulses at...for illuminator applications . Considerations which impact the wavelength to be used are the transmissivity of the atmosphere and the responsivity of

  19. Picosecond holmium fibre laser pumped at 1125 \\ {\\text{nm}}

    NASA Astrophysics Data System (ADS)

    Kamynin, V. A.; Filatova, S. A.; Zhluktova, I. V.; Tsvetkov, V. B.

    2016-12-01

    We report a passively mode-locked, all-fibre holmium laser based on nonlinear polarisation rotation. As a pump source use is made of an 1125-{\\text{nm}} ytterbium-doped fibre laser. The pulse repetition rate of the holmium laser is 7.5 {\\text{MHz}}, and the pulse duration does not exceed 52 {\\text{ps}} at wavelengths of 2065 and 2080 {\\text{nm}}. The average laser output power reaches 5 {\\text{mW}}.

  20. Investigations of a Dual Seeded 1178 nm Raman Laser System

    DTIC Science & Technology

    2016-01-14

    nm Raman system was built and 20 W of 1178 nm output power was achieved with a polarization extinction ratio of 21 and nearly diffraction limited...power was achieved with a polarization extinction ratio of 21 and nearly diffraction limited beam quality. Linewidth broadening was found to...polarization extinction ratio of 30 dB was obtained and a 20 time’s reduction in the effective stimulated Brillouin scattering coefficient was

  1. Power scaling of laser diode pumped Pr3+:LiYF4 cw lasers: efficient laser operation at 522.6 nm, 545.9 nm, 607.2 nm, and 639.5 nm.

    PubMed

    Gün, Teoman; Metz, Philip; Huber, Günter

    2011-03-15

    We report efficient cw laser operation of laser diode pumped Pr(3+)-doped LiYF4 crystals in the visible spectral region. Using two InGaN laser diodes emitting at λ(P)=443.9 nm with maximum output power of 1 W each and a 2.9-mm-long crystal with a doping concentration of 0.5%, output powers of 938 mW, 418 mW, 384 mW, and 773 mW were achieved for the laser wavelengths 639.5 nm, 607.2 nm, 545.9 nm, and 522.6 nm, respectively. The maximum absorbed pump powers were approximately 1.5 W, resulting in slope efficiencies of 63.6%, 32.0%, 52.1%, and 61.5%, as well as electro-optical efficiencies of 9.4%, 4.2%, 3.8%, and 7.7%, respectively. Within these experiments, laser diode-pumped laser action at 545.9 nm was demonstrated for what is believed to be the first time.

  2. High-index nanocomposite photoresist for 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Bae, Woo Jin; Trikeriotis, Makros; Rodriguez, Robert; Zettel, Michael F.; Piscani, Emil; Ober, Christopher K.; Giannelis, Emmanuel P.; Zimmerman, Paul

    2009-03-01

    In immersion lithography, high index fluids are used to increase the numerical aperture (NA) of the imaging system and decrease the minimum printable feature size. Water has been used in first generation immersion lithography at 193 nm to reach the 45 nm node, but to reach the 38 and 32 nm nodes, fluids and resists with a higher index than water are needed. A critical issue hindering the implementation of 193i at the 32 nm node is the availability of high refractive index (n > 1.8) and low optical absorption fluids and resists. It is critical to note that high index resists are necessary only when a high refractive index fluid is in use. High index resist improves the depth of focus (DOF) even without high index fluids. In this study, high refractive index nanoparticles have been synthesized and introduced into a resist matrix to increase the overall refractive index. The strategy followed is to synthesize PGMEA-soluble nanoparticles and then disperse them into a 193 nm resist. High index nanoparticles 1-2 nm in diameter were synthesized by a combination of hydrolysis and sol-gel methods. A ligand exchange method was used, allowing the surface of the nanoparticles to be modified with photoresist-friendly moieties to help them disperse uniformly in the resist matrix. The refractive index and ultraviolet absorbance were measured to evaluate the quality of next generation immersion lithography resist materials.

  3. Electron beam inspection methods for imprint lithography at 32 nm

    NASA Astrophysics Data System (ADS)

    Selinidis, Kosta; Thompson, Ecron; Sreenivasan, S. V.; Resnick, Douglas J.

    2009-01-01

    Step and Flash Imprint Lithography redefines nanoimprinting. This novel technique involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned solid on the substrate. Compatibility with existing CMOS processes requires a mask infrastructure in which resolution, inspection and repair are all addressed. The purpose of this paper is to understand the limitations of inspection at half pitches of 32 nm and below. A 32 nm programmed defect mask was fabricated. Patterns included in the mask consisted of an SRAM Metal 1 cell, dense lines, and dense arrays of pillars. Programmed defect sizes started at 4 nm and increased to 48 nm in increments of 4 nm. Defects in both the mask and imprinted wafers were characterized scanning electron microscopy and the measured defect areas were calculated. These defects were then inspected using a KLA-T eS35 electron beam wafer inspection system. Defect sizes as small as 12 nm were detected, and detection limits were found to be a function of defect type.

  4. Defect inspection of imprinted 32 nm half pitch patterns

    NASA Astrophysics Data System (ADS)

    Selinidis, Kosta; Thompson, Ecron; McMackin, Ian; Perez, Joseph; Sreenivasan, S. V.; Resnick, Douglas J.

    2008-10-01

    Step and Flash Imprint Lithography redefines nanoimprinting. This novel technique involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed leaving a patterned solid on the substrate. Compatibility with existing CMOS processes requires a mask infrastructure in which resolution, inspection and repair are all addressed. The purpose of this paper is to understand the limitations of inspection at half pitches of 32 nm and below. A 32 nm programmed defect mask was fabricated. Patterns included in the mask consisted of an SRAM Metal 1 cell, dense lines, and dense arrays of pillars. Programmed defect sizes started at 4 nm and increased to 48 nm in increments of 4 nm. Defects in both the mask and imprinted wafers were characterized scanning electron microscopy and the measured defect areas were calculated. These defects were then inspected using a KLA-T eS35 electron beam wafer inspection system. Defect sizes as small as 12 nm were detected, and detection limits were found to be a function of defect type.

  5. Predicting lithography costs: guidance for <= 32 nm patterning solutions

    NASA Astrophysics Data System (ADS)

    Hazelton, Andrew J.; Wüest, Andrea; Hughes, Greg; Lercel, Michael

    2008-05-01

    Extending lithography to 32 nm and 22 nm half pitch requires the introduction of new lithography technologies, such as EUVL or high-index immersion, or new techniques, such as double patterning. All of these techniques introduce large changes into the single exposure immersion lithography process as used for the 45 nm half pitch node. Therefore, cost per wafer is a concern. In this paper, total patterning costs are estimated for the 32 nm and 22 nm half pitch nodes through the application of cost-of-ownership models based on the tool, mask, and process costs. For all cases, the cost of patterning at 32 nm half pitch for critical layers will be more expensive than in prior generations. Mask costs are observed to be a significant component of lithography costs even up to a mask usage of 10,000 wafers/mask in most cases. The more simple structure of EUVL masks reduces the mask cost component and results in EUVL being the most cost-effective patterning solution under the assumptions of high throughput and good mask blank defect density.

  6. Trends in nanosecond melanosome microcavitation up to 1540 nm

    NASA Astrophysics Data System (ADS)

    Schmidt, Morgan S.; Kennedy, Paul K.; Noojin, Gary D.; Vincelette, Rebecca L.; Thomas, Robert J.; Rockwell, Benjamin A.

    2015-09-01

    Thresholds for microcavitation of bovine and porcine melanosomes were previously reported, using single nanosecond (ns) laser pulses in the visible (532 nm) and the near-infrared (NIR) from 1000 to 1319 nm. Here, we report average radiant exposure thresholds for bovine melanosome microcavitation at additional NIR wavelengths up to 1540 nm, which range from ˜0.159 J/cm2 at 800 nm to 4.5 J/cm2 at 1540 nm. Melanosome absorption coefficients were also estimated, and decreased with increasing wavelength. These values were compared to retinal pigment epithelium coefficients, and to water absorption, over the same wavelength range. Corneal total intraocular energy retinal damage threshold values were estimated and compared to the previous (2007) and recently changed (2014) maximum permissible exposure (MPE) safe levels. Results provide additional data that support the recent changes to the MPE levels, as well as the first microcavitation data at 1540 nm, a wavelength for which melanosome microcavitation may be an ns-pulse skin damage mechanism.

  7. Transillumination of interproximal caries lesions with 830-nm light

    NASA Astrophysics Data System (ADS)

    Jones, Graham C.; Jones, Robert S.; Fried, Daniel

    2004-05-01

    New imaging technology is needed for the early detection of dental caries (decay) in the interproximal contact sites between teeth. Previous measurements have demonstrated that dental enamel is highly transparent in the near-IR near 1310-nm making that wavelength range ideal for the transillumination of interproximal lesions. However, imaging at 1310-nm involves the use of expensive InGaAs technology. The purpose of this study was to compare the performance of a low cost near-IR sensitive imaging system employing a CCD camera with enhanced near-IR sensitivity operating at 830-nm with the 1310-nm InGaAs system. Images of simulated caries lesions were acquired through tooth sections of varying thickness and whole teeth in order to demonstrate the utility of a near-IR dental transillumination system for the imaging of early dental caries (decay). Simulated lesions, representing the optical scattering of natural dental caries, were placed in plano-parallel dental enamel sections and whole anterior teeth. The contrast ratio between the simulated lesions and surrounding sound enamel was calculated from analysis of the respective spatial intensity profiles in the acquired projection images. This study shows that near-IR transillumination at 830-nm offers significantly improved image contrast over the visible range, but less image contrast than at 1310-nm.

  8. Cs 728 nm Laser Spectroscopy and Faraday Atomic Filter

    NASA Astrophysics Data System (ADS)

    Liu, Zhong-Zheng; Tao, Zhi-Ming; Jiang, Zhao-Jie; Chen, Jing-Biao

    2014-12-01

    We mainly present the 728 nm laser spectroscopy and Faraday atomic filter of Cs atoms with 650 MHz linewidth and 2.6% transmission based on an electrodeless discharge vapor lamp, compared with Rb 728 nm laser spectroscopy. Accidentally, this remarkably strong Cs 728 nm transition from the 6F7/2 state to the 5D5/2 state is only about 2.5 GHz away from the Rb 728 nm transition of the future potential four-level active optical clock, once laser cooled and trapped from the 7S1/2 state to the 5P1/2 state, as we proposed previously. A Faraday atomic filter stabilized 728 nm laser using a Cs electrodeless discharge vapor lamp with a power of 10mW will provide a frequency reference to evaluate the performance of the potential Rb four-level active optical clock at 728 nm with power less than 1 nW by 2.5 GHz heterodyne measurements.

  9. Magneto-optical trap for metastable helium at 389 nm

    SciTech Connect

    Koelemeij, J.C.J.; Stas, R.J.W.; Hogervorst, W.; Vassen, W.

    2003-05-01

    We have constructed a magneto-optical trap (MOT) for metastable triplet helium atoms utilizing the 2 {sup 3}S{sub 1}{yields}3 {sup 3}P{sub 2} line at 389 nm as the trapping and cooling transition. The far-red-detuned MOT (detuning {delta}=-41 MHz) typically contains few times 10{sup 7} atoms at a relatively high ({approx}10{sup 9} cm{sup -3}) density, which is a consequence of the large momentum transfer per photon at 389 nm and a small two-body loss rate coefficient (2x10{sup -10} cm{sup 3}/s<{beta}<1.0x10{sup -9} cm{sup 3}/s). The two-body loss rate is more than five times smaller than in a MOT on the commonly used 2 {sup 3}S{sub 1}{yields}2 {sup 3}P{sub 2} line at 1083 nm. Furthermore, laser cooling at 389 nm results in temperatures somewhat lower than those achieved using 1083 nm. The 389-nm MOT exhibits small losses due to two-photon ionization, which have been investigated as well.

  10. Generation and biological evaluation of the products formed from the exposure of Phenothiazine to a 266nm laser beam

    NASA Astrophysics Data System (ADS)

    Alexandru, T.; Pascu, M. L.; Danko, B.; Nastasa, V.; Boni, M.; Militaru, A.; Andrei, I. R.; Staicu, A.; Hunyadi, A.; Armada, A.; Viveiros, M.; Amaral, L.

    2013-06-01

    Phenothiazine exposed to white light or UV radiation undergoes a variety of reactions that result in the degradation of the parental compound and the formation of new species. Chlorpromazine exposed to the 266 nm laser beam of given energy levels yielded species derived from it, whose number increased with the exposure duration. At distinct time intervals the irradiation products were evaluated by spectrophotometry between 200-1500 nm, Thin Layer Chromatography, and for antimicrobial activity of Chlorpromazine against different test organisms such as Staphylococcus aureus.

  11. Preparation of spherical and uniform-sized ferrite nanoparticles with diameters between 50 and 150 nm for biomedical applications

    NASA Astrophysics Data System (ADS)

    Tanaka, Toshiyuki; Shimazu, Ryuichi; Nagai, Hironori; Tada, Masaru; Nakagawa, Takashi; Sandhu, Adarsh; Handa, Hiroshi; Abe, Masanori

    2009-05-01

    Spherical uniform-sized iron ferrite nanoparticles were synthesized by adding a disaccharide and seed ferrite crystals into an aqueous reaction solution. The average size range 50-150 nm was controlled by choosing one out of five disaccharides and by changing the amount of the seed crystals. The particles had a saturation magnetization and a crystalline structure which are similar to those of intermediate Fe 3O 4-γ-Fe 2O 3. When coated with citrate, the particles with nearly 100 nm diameter were stably suspended in water for 2 days. These novel particles will be utilized as magnetic carriers in biomedical applications.

  12. Recent developments in Fourier domain mode locked lasers for optical coherence tomography: imaging at 1310 nm vs. 1550 nm wavelength.

    PubMed

    Biedermann, Benjamin R; Wieser, Wolfgang; Eigenwillig, Christoph M; Huber, Robert

    2009-07-01

    We report on recent progress in Fourier domain mode-locking (FDML) technology. The paper focuses on developments beyond pushing the speed of these laser sources. After an overview of improvements to FDML over the last three years, a brief analysis of OCT imaging using FDML lasers with different wavelengths is presented. For the first time, high speed, high quality FDML imaging at 1550 nm is presented and compared to a system at 1310 nm. The imaging results of human skin for both wavelengths are compared and analyzed. Sample arm optics, power on the sample, heterodyne gain, detection bandwidth, colour cut levels and sample location have been identical to identify the influence of difference in scattering and water absorption. The imaging performance at 1310 nm in human skin is only slightly better and the results suggest that water absorption only marginally affects the penetration depth in human skin at 1550 nm. For several applications this wavelength may be preferred.

  13. 750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range.

    PubMed

    Saarinen, Esa J; Lyytikäinen, Jari; Ranta, Sanna; Rantamäki, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G

    2015-10-01

    We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tuned from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M2 of the laser output was measured to be below 1.5 at all pump powers. The laser is a promising tool for biomedical applications that can take advantage of the large penetration depth of light in tissue in the 700-800 nm spectral range.

  14. High-efficiency high-brightness diode lasers at 1470 nm/1550 nm for medical and defense applications

    NASA Astrophysics Data System (ADS)

    Gallup, Kendra; Ungar, Jeff; Vaissie, Laurent; Lammert, Rob; Hu, Wentao

    2012-03-01

    Diode lasers in the 1400 nm to 1600 nm regime are used in a variety of applications including pumping Er:YAG lasers, range finding, materials processing, aesthetic medical treatments and surgery. In addition to the compact size, efficiency, and low cost advantages of traditional diode lasers, high power semiconductor lasers in the eye-safe regime are becoming widely used in an effort to minimize the unintended impact of potentially hazardous scattered optical radiation from the laser source, the optical delivery system, or the target itself. In this article we describe the performance of high efficiency high brightness InP laser bars at 1470nm and 1550nm developed at QPC Lasers for applications ranging from surgery to rangefinding.

  15. The Spectrum of Th-Ar Hollow Cathode Lamps in the 691nm to 5804nm region Database

    National Institute of Standards and Technology Data Gateway

    SRD 161 The Spectrum of Th-Ar Hollow Cathode Lamps in the 691nm to 5804nm region Database (Web, free access)   This atlas presents observations of the infra-red (IR) spectrum of a low current Th-Ar hollow cathode lamp with the 2-m Fourier transform spectrometer (FTS) at NIST. These observations establish more than 2400 lines that are suitable for use as wavelength standards in the range 691 nm to 5804 nm. The observations were made in collaboration with the European Southern Observatory (ESO), in order to provide calibration reference data for new high-resolution Echelle spectrographs, such as the Cryogenic High-Resolution IR Echelle Spectrograph ([CRIRES]), ESO's new IR spectrograph at the Very Large Telescope in Chile.

  16. Orthogonally polarized dual-wavelength Nd:LuVO4 laser at 1086 nm and 1089 nm.

    PubMed

    Huang, Y P; Cho, C Y; Huang, Y J; Chen, Y F

    2012-02-27

    A comparison between the fluorescence spectra of the Nd-doped vanadate crystals (Nd:YVO4, Nd:GdVO4, Nd:LuVO4) for the 4F3/2 → 4I11/2 transition is studied. We numerically analyze the condition of gain-to-loss balance via an uncoated intracavity etalon to achieve the dual-wavelength operation. We further experimentally demonstrate the orthogonally polarized dual-wavelength laser with a single Nd:LuVO4 crystal. The simultaneous dual-wavelength Nd:LuVO4 laser at 1085.7 nm in σ polarization and 1088.5 nm in π polarization is realized. At an incident pump power of 12 W, the average output power obtained at 1085.7 nm and 1088.5 nm is 0.4 W and 1.7 W, respectively.

  17. Detonation wave profiles measured in plastic bonded explosives using 1550 nm photon doppler velocimetry (PDV)

    SciTech Connect

    Gustavsen, Richard L; Bartram, Brian D; Sanchez, Nathaniel J

    2009-01-01

    We present detonation wave profiles measured in two TATB based explosives and two HMX based explosives. Profiles were measured at the interface of the explosive and a Lithium-Fluoride (LiF) window using 1550 nm Photon Doppler Velocimetry (PDV). Planar detonations were produced by impacting the explosive with a projectile launched in a gas-gun. The impact state was varied to produce varied distance to detonation, and therefore varied support of the Taylor wave following the Chapman-Jouget (CJ) or sonic state. Profiles from experiments with different support should be the same between the Von-Neumann (VN) spike and CJ state and different thereafter. Comparison of profiles with differing support, therefore, allows us to estimate reaction zone lengths. For the TATB based explosive, a reaction zone length of {approx} 3.9 mm, 500 ns was measured in EDC-35, and a reaction zone length of {approx} 6.3 mm, 800 ns was measured in PBX 9502 pre-cooled to -55 C. The respective VN spike state was 2.25 {+-} 0.05 km/s in EDC-35 and 2.4 {+-} 0.1 km/s in the cooled PBX 9502. We do not believe we have resolved either the VN spike state (> 2.6 km/s) nor the reaction zone length (<< 50 ns) in the HMX based explosives.

  18. Detonation Wave Profiles Measured in Plastic Bonded Explosives Using 1550 nm Photon Doppler Velocimetry

    NASA Astrophysics Data System (ADS)

    Gustavsen, R. L.; Bartram, B. D.; Sanchez, N. J.

    2009-12-01

    We present detonation wave profiles measured in two TATB based explosives and two HMX based explosives. Profiles were measured at the interface of the explosive and a Lithium-Fluoride (LiF) window using 1550 nm Photon Doppler Velocimetry (PDV). Planar detonations were produced by impacting the explosive with a projectile launched in a gas-gun. The impact state was changed from shot to shot in order to produce varied distances to detonation. In this way, we tuned the support of the Taylor wave following the Chapman-Jouget (CJ) or sonic state. Profiles from experiments with different support should be the same between the Von-Neumann (VN) spike and CJ state and different thereafter. Comparison of profiles with differing support, therefore, allows us to estimate reaction zone lengths. For the TATB based explosive, a reaction zone length of ≈3.9 mm, 500 ns was measured in EDC-35, and a reaction zone length of ≈6.3 mm, 800 ns was measured in PBX 9502 pre-cooled to -55° C. The respective VN spike state was 2.25±0.05 km/s in EDC-35 and 2.4±0.1 km/s in the cooled PBX 9502. We do not believe we have resolved either the VN spike state (>2.6 km/s) nor the reaction zone length (≪50 ns) in the HMX based explosives.

  19. Compact Fiber Laser for 589nm Laser Guide Star Generation

    NASA Astrophysics Data System (ADS)

    Pennington, D.; Drobshoff, D.; Mitchell, S.; Brown, A.

    Laser guide stars are crucial to the broad use of astronomical adaptive optics, because they facilitate access to a large fraction of possible locations on the sky. Lasers tuned to the 589 nm atomic sodium resonance can create an artificial beacon at altitudes of 95-105 km, thus coming close to reproducing the light path of starlight. The deployment of multiconjugate adaptive optics on large aperture telescopes world-wide will require the use of three to nine sodium laser guide stars in order to achieve uniform correction over the aperture with a high Strehl value. Current estimates place the minimum required laser power at > 10 W per laser for a continuous wave source, though a pulsed format, nominally 6?s in length at ~ 16.7 kHz, is currently preferred as it would enable tracking the laser through the Na layer to mitigate spot elongation. The lasers also need to be compact, efficient, robust and turnkey. We are developing an all-fiber laser system for generating a 589 nm source for laser-guided adaptive optics. Fiber lasers are more compact and insensitive to alignment than their bulk laser counterparts, and the heat-dissipation characteristics of fibers, coupled with the high efficiencies demonstrated and excellent spatial mode characteristics, make them a preferred candidate for many high power applications. Our design is based on sum-frequency mixing an Er/Yb:doped fiber laser operating at 1583 nm with a 938 nm Nd:silica fiber laser in a periodically poled crystal to generate 589 nm. We have demonstrated 14 W at 1583 nm with an Er/Yb:doped fiber laser, based on a Koheras single frequency fiber oscillator amplified in an IPG Photonics fiber amplifier. The Nd:silica fiber laser is a somewhat more novel device, since the Nd3+ ions must operate on the resonance transition (i.e. 4F3/2-4I9/2), while suppressing ASE losses at the more conventional 1088 nm transition. Optimization of the ratio of the fiber core and cladding permits operation of the laser at room

  20. Generation of Thermospheric OI 845 nm Emission by Bowen Fluorescence

    NASA Astrophysics Data System (ADS)

    Huestis, D. L.; Sharpee, B. D.; Cosby, P. C.; Slanger, T. G.

    2006-12-01

    777 and 845 nm emissions from the 3p-3s multiplets of atomic oxygen are commonly observed at non-auroral latitudes in the terrestrial nightglow. By studying the relative strengths of these emissions we can learn something about the mechanisms that produce them and what they can teach us about the atmosphere. Recently [1] we have used intensity-calibrated sky spectra from the Keck telescopes to investigate the relative strengths of a wide range of O-atom Rydberg lines and have confirmed that electron-ion radiative recombination is a primary source of excitation for both the triplet and quintet systems. Following the intensity of the 777 and 845 nm lines during the night, we find that for most of the night the quintet 777 nm line is consistently stronger than the triplet 845 nm line, with a nearly constant intensity ratio I(777)/I(845) near 2.3, although both intensities fall rapidly as the night progresses. However, late in the night the 845 nm intensity levels off, while the 777 nm intensity continues to fall, and the I(777)/I(845) ratio plunges by a factor of 5-10. We interpret these observations as indicating that the O-atom quintet states are still being excited by the same mechanism as earlier in the night, i.e. radiative recombination, but some triplet states are also being excited by an additional mechanism. Such a mechanism has been proposed before [2-6] but not previously observed directly in the terrestrial nightglow. The oxygen triplet 3d-2p transition at 102.576 nm is in close coincidence with the solar hydrogen Lyman-β line at 102.572 nm. Radiative transport in the hydrogen geocorona will deliver Lyman-β intensity into the Earth's shadow and will produce triplet O(3d 3D) high in the atmosphere, even prior to direct solar illumination. The result is observable in a radiative cascade sequence 3d-3p(1129 nm) → 3p- 3s(845 nm) → 3s-2p(130 nm). A similar effect is observed in the H-α emission, which is also excited by Lyman-β absorption. This process

  1. Imaging performance and challenges of 10nm and 7nm logic nodes with 0.33 NA EUV

    NASA Astrophysics Data System (ADS)

    van Setten, Eelco; Schiffelers, Guido; Psara, Eleni; Oorschot, Dorothe; Davydova, Natalia; Finders, Jo; Depre, Laurent; Farys, Vincent

    2014-10-01

    The NXE:3300B is ASML's third generation EUV system and has an NA of 0.33 and is positioned at a resolution of 22nm, which can be extended down to 18nm and below with off-axis illumination at full transmission. Multiple systems have been qualified and installed at customers. The NXE:3300B succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV experience. It is expected that EUV will be adopted first for critical Logic layers at 10nm and 7nm nodes, such as Metal-1, to avoid the complexity of triple patterning schemes using ArF immersion. In this paper we will evaluate the imaging performance of (sub-)10nm node Logic M1 on the NXE:3300B EUV scanner. We will show the line-end performance of tip-to-tip and tip-to-space test features for various pitches and illumination settings and the performance enhancement obtained by means of a 1st round of OPC. We will also show the magnitude of local variations. The Logic M1 cell is evaluated at various critical features to identify hot spots. A 2nd round OPC model was calibrated of which we will show the model accuracy and ability to predict hot spots in the Logic M1 cell. The calibrated OPC model is used to predict the expected performance at 7nm node Logic using off-axis illumination at 16nm minimum half pitch. Initial results of L/S exposed on the NXE:3300B at 7nm node resolutions will be shown. An outlook is given to future 0.33 NA systems on the ASML roadmap with enhanced illuminator capabilities to further improve performance and process window.

  2. A self-Q-switched all-fiber erbium laser at 1530 nm using an auxiliary 1570-nm erbium laser.

    PubMed

    Tsai, Tzong-Yow; Fang, Yen-Cheng

    2009-11-23

    We demonstrate a self-Q-switched, all-fiber, tunable, erbium laser at 1530 nm with high pulse repetition rates of 0.9-10 kHz. Through the use of an auxiliary 10-mW, 1570 nm laser that shortened the relaxation time of erbium, sequentially Q-switched pulses with pulse energies between 4 and 6 microJ and pulse widths of 40 ns were steadily achieved. A peak pulse power of 165 W was obtained.

  3. High-brightness 800nm fiber-coupled laser diodes

    NASA Astrophysics Data System (ADS)

    Berk, Yuri; Levy, Moshe; Rappaport, Noam; Tessler, Renana; Peleg, Ophir; Shamay, Moshe; Yanson, Dan; Klumel, Genadi; Dahan, Nir; Baskin, Ilya; Shkedi, Lior

    2014-03-01

    Fiber-coupled laser diodes have become essential sources for fiber laser pumping and direct energy applications. Single emitters offer reliable multi-watt output power from a 100 m lateral emission aperture. By their combination and fiber coupling, pump powers up to 100 W can be achieved from a low-NA fiber pigtail. Whilst in the 9xx nm spectral range the single emitter technology is very mature with <10W output per chip, at 800nm the reliable output power from a single emitter is limited to 4 W - 5 W. Consequently, commercially available fiber coupled modules only deliver 5W - 15W at around 800nm, almost an order of magnitude down from the 9xx range pumps. To bridge this gap, we report our advancement in the brightness and reliability of 800nm single emitters. By optimizing the wafer structure, laser cavity and facet passivation process we have demonstrated QCW device operation up to 19W limited by catastrophic optical damage to the 100 μm aperture. In CW operation, the devices reach 14 W output followed by a reversible thermal rollover and a complete device shutdown at high currents, with the performance fully rebounded after cooling. We also report the beam properties of our 800nm single emitters and provide a comparative analysis with the 9xx nm single emitter family. Pump modules integrating several of these emitters with a 105 μm / 0.15 NA delivery fiber reach 35W in CW at 808 nm. We discuss the key opto-mechanical parameters that will enable further brightness scaling of multi-emitter pump modules.

  4. Analysis of Cervical Supernatant Samples Luminescence Using 355 nm Laser

    NASA Astrophysics Data System (ADS)

    Vaitkuviene, A.; Gegzna, V.; Kurtinaitiene, R.; Stanikunas, R.; Rimiene, J.; Vaitkus, J.

    2010-05-01

    The biomarker discovery for accurate detection and diagnosis of cervical carcinoma and its malignant precursors represents one of the current challenges in clinical medicine. Laser induced autofluorescence spectra in cervical smear content were fitted to predict the cervical epithelium diagnosis as a lab off "optical biopsy" method. Liquid PAP supernatant sediment dried on Quartz plate spectroscopy was performed by 355 nm Nd YAG microlaser STA-1 (Standa, Ltd). For comparison a liquid supernatant spectroscopy was formed by laboratory "Perkin Elmer LS 50B spetrometer at 290, 300, 310 nm excitations. Analysis of spectrum was performed by approximation using the multi-peaks program with Lorentz functions for the liquid samples and with Gaussian functions for the dry samples. Ratio of spectral components area to the area under whole experimental curve (SPP) was calculated. The spectral components were compared by averages of SPP using Mann-Whitney U-test in histology groups. Results. Differentiation of Normal and HSIL/CIN2+ cases in whole supernatant could be performed by stationary laboratory lamp spectroscopy at excitation 290 nm and emission >379 nm with accuracy AUC 0,69, Sens 0,72, Spec 0,65. Differentiation Normal versus HSIL/CIN2+ groups in dried enriched supernatant could be performed by 355 nm microlaser excitation at emission 405-424 nm with accuracy (AUC 0,96, Sens 0,91, Spec 1.00). Diagnostic algorithm could be created for all histology groups differentiation under 355 nm excitation. Microlaser induced "optical biopsy "looks promising method for cervical screening at the point of care.

  5. Electro-optically Q-switched dual-wavelength Nd:YLF laser emitting at 1047 nm and 1053 nm

    NASA Astrophysics Data System (ADS)

    Men, Shaojie; Liu, Zhaojun; Cong, Zhenhua; Li, Yongfu; Zhang, Xingyu

    2015-05-01

    A flash-lamp pumped electro-optically Q-switched dual-wavelength Nd:YLF laser is demonstrated. Two Nd:YLF crystals placed in two cavities are employed to generate orthogonally polarized 1047 nm and 1053 nm radiations, respectively. The two cavities are jointed together by a polarizer and share the same electro-optical Q-switch. Two narrow-band pass filters are used to block unexpected oscillations at the hold-off state of the electro-optical Q-switch. In this case, electro-optical Q-switching is able to operate successfully. With pulse synchronization realized, the maximum output energy of 66.2 mJ and 83.9 mJ are obtained for 1047 nm and 1053 nm lasers, respectively. Correspondingly, the minimum pulse width is both 17 ns for 1047 nm and 1053 nm lasers. Sum frequency generation is realized. This demonstrates the potential of this laser in difference-frequency generations to obtain terahertz wave.

  6. Optical coherence tomography based imaging of dental demineralisation and cavity restoration in 840 nm and 1310 nm wavelength regions

    NASA Astrophysics Data System (ADS)

    Damodaran, Vani; Rao, Suresh Ranga; Vasa, Nilesh J.

    2016-08-01

    In this paper, a study of in-house built optical coherence tomography (OCT) system with a wavelength of 840 nm for imaging of dental caries, progress in demineralisation and cavity restoration is presented. The caries when imaged with the 840 nm OCT system showed minute demineralisation in the order of 5 μm. The OCT system was also proposed to study the growth of lesion and this was demonstrated by artificially inducing caries with a demineralisation solution of pH 4.8. The progress of carious lesion to a depth of about 50-60 μm after 60 hours of demineralisation was clearly observed with the 840 nm OCT system. The tooth samples were subjected to accelerated demineralisation condition at pH of approximately 2.3 to study the adverse effects and the onset of cavity formation was clearly observed. The restoration of cavity was also studied by employing different restorative materials (filled and unfilled). In the case of restoration without filler material (unfilled), the restoration boundaries were clearly observed. Overall, results were comparable with that of the widely used 1310 nm OCT system. In the case of restoration with filler material, the 1310 nm OCT imaging displayed better imaging capacity due to lower scattering than 840 nm imaging.

  7. Magnetoelastically induced magnetic anisotropy transition in [CoO5nm/CoPt7nm]5 multilayer films

    NASA Astrophysics Data System (ADS)

    Guo, Lei; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji

    2016-06-01

    The magnetic anisotropy transition of [CoO5nm/CoPt7nm]5 multilayer film with respect to post-annealing has been studied systematically. It undergoes a smooth transition from longitudinal magnetic anisotropy (LMA) to perpendicular magnetic anisotropy (PMA) upon annealing and returns backward to LMA at high temperature of 550 °C. The strongest PMA of [CoO5nm/CoPt7nm]5 is achieved after post-annealing at 300 °C and the tolerable post-annealing temperature with strong PMA is up to 400 °C, which indicates this multilayer film could be a potential candidate for the PMA application at middle-high-temperature-region between 300 °C and 400 °C. The mechanism responsible for the transition of magnetic anisotropy has been investigated by analyzing CoO/CoPt interface and CoPt layer internal stress. It is found the effective PMA energy is proportional to the in-plane tensile stress of CoPt layer but is inversely proportional to the roughness of CoO/CoPt interface. Finally, by means of low temperature experiment we demonstrate the magnetic anisotropy transition observed in [CoO5nm/CoPt7nm]5 multilayer film is mainly attributed to the change of CoPt layer in-plane tensile stress.

  8. Fabricating nanopores with diameters of sub-1 nm to 3 nm using multilevel pulse-voltage injection

    PubMed Central

    Yanagi, Itaru; Akahori, Rena; Hatano, Toshiyuki; Takeda, Ken-ichi

    2014-01-01

    To date, solid-state nanopores have been fabricated primarily through a focused-electronic beam via TEM. For mass production, however, a TEM beam is not suitable and an alternative fabrication method is required. Recently, a simple method for fabricating solid-state nanopores was reported by Kwok, H. et al. and used to fabricate a nanopore (down to 2 nm in size) in a membrane via dielectric breakdown. In the present study, to fabricate smaller nanopores stably—specifically with a diameter of 1 to 2 nm (which is an essential size for identifying each nucleotide)—via dielectric breakdown, a technique called “multilevel pulse-voltage injection” (MPVI) is proposed and evaluated. MPVI can generate nanopores with diameters of sub-1 nm in a 10-nm-thick Si3N4 membrane with a probability of 90%. The generated nanopores can be widened to the desired size (as high as 3 nm in diameter) with sub-nanometre precision, and the mean effective thickness of the fabricated nanopores was 3.7 nm. PMID:24847795

  9. Fabricating nanopores with diameters of sub-1 nm to 3 nm using multilevel pulse-voltage injection.

    PubMed

    Yanagi, Itaru; Akahori, Rena; Hatano, Toshiyuki; Takeda, Ken-ichi

    2014-05-21

    To date, solid-state nanopores have been fabricated primarily through a focused-electronic beam via TEM. For mass production, however, a TEM beam is not suitable and an alternative fabrication method is required. Recently, a simple method for fabricating solid-state nanopores was reported by Kwok, H. et al. and used to fabricate a nanopore (down to 2 nm in size) in a membrane via dielectric breakdown. In the present study, to fabricate smaller nanopores stably--specifically with a diameter of 1 to 2 nm (which is an essential size for identifying each nucleotide)--via dielectric breakdown, a technique called "multilevel pulse-voltage injection" (MPVI) is proposed and evaluated. MPVI can generate nanopores with diameters of sub-1 nm in a 10-nm-thick Si3N4 membrane with a probability of 90%. The generated nanopores can be widened to the desired size (as high as 3 nm in diameter) with sub-nanometre precision, and the mean effective thickness of the fabricated nanopores was 3.7 nm.

  10. Research of the Additional Losses Occurring in Optical Fiber at its Multiple Bends in the Range Waves 1310nm, 1550nm and 1625nm Long

    NASA Astrophysics Data System (ADS)

    Yurchenko, A. V.; Gorlov, N. I.; Alkina, A. D.; Mekhtiev, A. D.; Kovtun, A. A.

    2016-01-01

    Article is devoted to research of the additional losses occurring in the optical fiber at its multiple bends in the range waves of 1310 nanometers, 1550 nanometers and 1625 nanometers long. Article is directed on creation of the external factors methods which allow to estimate and eliminate negative influence. The automated way of calculation of losses at a bend is developed. Results of scientific researches are used by engineers of “Kazaktelekom” AS for practical definition of losses service conditions. For modeling the Wolfram|Alpha environment — the knowledge base and a set of computing algorithms was chosen. The greatest losses are noted on wavelength 1310nm and 1625nm. All dependences are nonlinear. Losses with each following excess are multiplicative.

  11. Particle velocity measurements of the reaction zone in nitromethane

    SciTech Connect

    Sheffield, S. A.; Engelke, R. P.; Alcon, R. R.; Gustavsen, R. L.; Robbins, D. L.; Stahl, D. B.; Stacy, H. L.; Whitehead, M.

    2002-01-01

    The detonation reaction-zone length in neat, deuterated, and chemically sensitized nitromethane (NM) has been measured by using several different laser-based velocity interferometry systems. The experiments involved measuring the particle velocity history at a NM/PMMA (polymethylmethacrylate) window interface during the time a detonation in the NM interacted with the interface. Initially, Fabry-Perot interferometry was used, but, because of low time resolution (>5 ns), several different configurations of VISAR interferometry were subsequently used. Early work was done with VISARs with a time resolution of about 3 ns. By making changes to the recording system, we were able to improve this to {approx}1 ns. Profiles measured at the NM/PMMA interface agree with the ZND theory, in that a spike ({approx}2.45 mm/{micro}s) is measured that is consistent with an extrapolated reactant NM Hugoniot matched to the PMMA window. The spike is rather sharp, followed by a rapid drop in particle velocity over a time of 5 to 10 ns; this is evidence of early fast reactions. Over about 50 ns, a much slower particle velocity decrease occurs to the assumed CJ condition - indicating a total reaction zone length of {approx}300 {micro}m. When the NM is chemically changed, such as replacing the hydrogen atoms with deuterium or chemically sensitizing with a base, some changes are observed in the early part of the reaction zone.

  12. The enhancement of 21.2%-power conversion efficiency in polymer photovoltaic cells by using mixed Au nanoparticles with a wide absorption spectrum of 400 nm-1000 nm

    NASA Astrophysics Data System (ADS)

    Hao, Jing-Yu; Xu, Ying; Zhang, Yu-Pei; Chen, Shu-Fen; Li, Xing-Ao; Wang, Lian-Hui; Huang, Wei

    2015-04-01

    Au nanoparticles (NPs) mixed with a majority of bone-like, rod, and cube shapes and a minority of irregular spheres, which can generate a wide absorption spectrum of 400 nm-1000 nm and three localized surface plasmon resonance peaks, respectively, at 525, 575, and 775 nm, are introduced into the hole extraction layer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) to improve optical-to-electrical conversion performances in polymer photovoltaic cells. With the doping concentration of Au NPs optimized, the cell performance is significantly improved: the short-circuit current density and power conversion efficiency of the poly(3-hexylthiophene): [6,6]-phenyl-C60-butyric acid methyl ester cell are increased by 20.54% and 21.2%, reaching 11.15 mA·cm-2 and 4.23%. The variations of optical, electrical, and morphology with the incorporation of Au NPs in the cells are analyzed in detail, and our results demonstrate that the cell performance improvement can be attributed to a synergistic reaction, including: 1) both the localized surface plasmon resonance- and scattering-induced absorption enhancement of the active layer, 2) Au doping-induced hole transport/extraction ability enhancement, and 3) large interface roughness-induced efficient exciton dissociation and hole collection. Project supported by the National Basic Research Program of China (Grant Nos. 2015CB932202 and 2012CB933301), the National Natural Science Foundation of China (Grant Nos. 61274065, 51173081, 61136003, BZ2010043, 51372119, and 51172110), the Science Fund from the Ministry of Education of China (Grant No. IRT1148), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20113223110005), the Priority Academic Program Development of Jiangsu Provincial Higher Education Institutions (Grant No. YX03001), and the National Synergistic Innovation Center for Advanced Materials and the Synergetic Innovation Center for Organic Electronics and

  13. Extensive angiokeratoma circumscriptum - successful treatment with 595-nm variable-pulse pulsed dye laser and 755-nm long-pulse pulsed alexandrite laser.

    PubMed

    Baumgartner, Ján; Šimaljaková, Mária; Babál, Pavel

    2016-06-01

    Angiokeratomas are rare vascular mucocutaneous lesions characterized by small-vessel ectasias in the upper dermis with reactive epidermal changes. Angiokeratoma circumscriptum (AC) is the rarest among the five types in the current classification of angiokeratoma. We present a case of an extensive AC in 19-year-old women with Fitzpatrick skin type I of the left lower extremity, characterized by a significant morphological heterogeneity of the lesions, intermittent bleeding, and negative psychological impact. Histopathological examination after deep biopsy was consistent with that of angiokeratoma. The association with metabolic diseases (Fabry disease) was excluded by ophthalmological, biochemical, and genetic examinations. Nuclear magnetic resonance imaging has not detected deep vascular hyperplasia pathognomic for verrucous hemangioma. The combined treatment with 595-nm variable-pulse pulsed dye laser (VPPDL) and 755-nm long-pulse pulsed alexandrite laser (LPPAL) with dynamic cooling device led to significant removal of the pathological vascular tissue of AC. Only a slight degree of secondary reactions (dyspigmentations and texture changes) occurred. No recurrence was observed after postoperative interval of 9 months. We recommend VPPDL and LPPAL for the treatment of extensive AC.

  14. Observation of Quiet Limb in He I 1083.0 nm, H Paschen alpha1281.8 nm and H Brackett gamma 2166.1 nm lines

    NASA Astrophysics Data System (ADS)

    Prasad Choudhary, Debi

    2016-05-01

    In this paper, we shall present the results of an observational study of the quiet solar limb in the near infrared lines using the New IR Array Camera (NAC) and the vertical spectrograph at the focal plane of McMath-Pierce telescope. The NAC, at the exit port of the spectrograph, was used to record the limb spectrum in HeI 1083.0 nm, Hydrogen Paschen 1281.8 nm and Brackett 2165.5 nm wavelength regions. The NAC is a 1024x1024 InSb Alladin III Detector operating over 1-5 micron range with high density sampling at 0.018 arc second/pixel. The all-reflective optical train minimizes number of surfaces and eliminates ghosts leading to low scatter, ghost-free optics. The close-cycle cryogenic provides a stable cooling environment over six hour period with an accuracy of 0.01K leading to low dark current. The low read out noise combined with low scattered light and dark current makes NAC an ideal detector for making high quality infrared spectral observations of solar limb. The limb spectrums were obtained by placing the spectrograph slit perpendicular to the limb at an interval of 10 degrees around the solar disk. We shall report the intensity profile, line-of-sight velocity and line width distribution around the sun derived from the spectra along the slit.

  15. Kinetics and mechanism investigation on the destruction of oxytetracycline by UV-254nm activation of persulfate.

    PubMed

    Liu, Yiqing; He, Xuexiang; Fu, Yongsheng; Dionysiou, Dionysios D

    2016-03-15

    Oxytetracycline (OTC), an important broad-spectrum antibiotic, has been detected extensively in various environmental systems, which may have a detrimental impact on ecosystem and human health through the development of drug resistant bacteria and pathogens. In this study, the degradation of OTC was evaluated by UV-254nm activated persulfate (PS). The observed UV fluence based pseudo first-order rate constant (kobs) was found to be the highest at near neutral pH conditions (pH 5.5-8.5). Presence of various natural water constituents had different effects on OTC degradation, with a significant enhancement in the presence of bicarbonate or Cu(2+). Limited elimination of total organic carbon (TOC) and PS was observed during the mineralization of OTC. Transformation byproducts in the presence and absence of hydroxyl radical scavenging agent tert-butanol (t-BuOH) were identified using ultra-high definition accurate-mass quadrupole time-of-flight liquid chromatography/mass spectrometer (LC-QTOF/MS). Potential OTC degradation mechanism was subsequently proposed revealing four different reaction pathways by SO4(-) reaction including hydroxylation (+16Da), demethylation (-14Da), decarbonylation (-28Da) and dehydration (-18Da). This study suggests that UV-254nm/PS is a promising treatment technology for the control of water pollution caused by emerging contaminants such as OTC.

  16. Quantum yield for carbon monoxide production in the 248 nm photodissociation of carbonyl sulfide (OCS)

    SciTech Connect

    Zhao, Z.; Stickel, R.E.; Wine, P.H.

    1995-03-01

    Tunable diode laser absorption spectroscopy has been coupled with excimer laser flash photolysis to measure the quantum yield for CO production from 248 nm photodissociation of carbonyl sulfide (OCS) relative to the well known quantum yield for CO production from 248 nm photolysis of phosgene (Cl{sub 2}CO). The temporal resolution of the experiments was sufficient to distinguish CO formed directly by photodissociation from that formed by subsequent S({sup 3}P{sub j}) reaction with OCS. Under the experimental conditions employed, CO formation via the fast S({sup 1}D{sub 2})+OCS reaction was minimal. Measurements at 297K and total pressures from 4 to 100 Torr N{sub 2}+N{sub 2}O show the CO yield to be greater than 0.95 and most likely unity. This result suggests that the contribution of OCS as a precursor to the lower stratospheric sulfate aerosol layer is somewhat larger than previously thought. 25 refs., 1 fig., 2 tabs.

  17. Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Tagawa, Seiichi; Santillan, Julius Joseph; Toriumi, Minoru; Itani, Toshiro

    2008-06-01

    The trade-off between sensitivity, resolution, and line edge roughness is the most important concern for the development of high-performance resists based on chemical amplification. Below sub-30 nm patterns, a chemical balance between acids and quenchers basically controls the quality of latent images. Under this situation, an ideal chemically amplified resist is the one in which the neutralization between acids and quenchers proceeds before the start of acid catalytic reactions and chemical reactions occur with a diffusion-controlled rate. In this study, the qualities of latent images were compared among exposure doses of 2, 5, 10, and 20 mJ cm-2 under the ideal condition. The authors found that chemically amplified resists with a 22 nm resolution and a 10 mJ cm-2 sensitivity are feasible under the ideal condition. However, a high-quality image is unlikely to be obtained upon 5 mJ cm-2 exposure without increasing polymer absorption or acid generation efficiency per photon.

  18. The Glyoxal Clock Reaction

    ERIC Educational Resources Information Center

    Ealy, Julie B.; Negron, Alexandra Rodriguez; Stephens, Jessica; Stauffer, Rebecca; Furrow, Stanley D.

    2007-01-01

    Research on the glyoxal clock reaction has led to adaptation of the clock reaction to a general chemistry experiment. This particular reaction is just one of many that used formaldehyde in the past. The kinetics of the glyoxal clock makes the reaction suitable as a general chemistry lab using a Calculator Based Laboratory (CBL) or a LabPro. The…

  19. The Glyoxal Clock Reaction

    ERIC Educational Resources Information Center

    Ealy, Julie B.; Negron, Alexandra Rodriguez; Stephens, Jessica; Stauffer, Rebecca; Furrow, Stanley D.

    2007-01-01

    Research on the glyoxal clock reaction has led to adaptation of the clock reaction to a general chemistry experiment. This particular reaction is just one of many that used formaldehyde in the past. The kinetics of the glyoxal clock makes the reaction suitable as a general chemistry lab using a Calculator Based Laboratory (CBL) or a LabPro. The…

  20. Skin reactions to sunscreens.

    PubMed

    Nixon, R L; Frowen, K E; Lewis, A E

    1997-06-01

    Sunscreen reactions are said not to be uncommon. A population referred to a patch testing clinic was evaluated for reactions to sunscreen by questionnaire initially and then, if relevant, by patch testing to sunscreen products and their components. Irritant reactions were more common than allergic contact dermatitis. Allergic reactions to sunscreens were less common than to non-sunscreen chemicals present in sunscreen products.

  1. Cavity-enhanced measurements of hydrogen peroxide absorption cross sections from 353 to 410 nm.

    PubMed

    Kahan, Tara F; Washenfelder, Rebecca A; Vaida, Veronica; Brown, Steven S

    2012-06-21

    We report near-ultraviolet and visible absorption cross sections of hydrogen peroxide (H(2)O(2)) using incoherent broad-band cavity-enhanced absorption spectroscopy (IBBCEAS), a recently developed, high-sensitivity technique. The measurements reported here span the range of 353-410 nm and extend published electronic absorption cross sections by 60 nm to absorption cross sections below 1 × 10(-23) cm(2) molecule(-1). We have calculated photolysis rate constants for H(2)O(2) in the lower troposphere at a range of solar zenith angles by combining the new measurements with previously reported data at wavelengths shorter than 350 nm. We predict that photolysis at wavelengths longer than those included in the current JPL recommendation may account for up to 28% of the total hydroxyl radical (OH) production from H(2)O(2) photolysis under some conditions. Loss of H(2)O(2) via photolysis may be of the same order of magnitude as reaction with OH and dry deposition in the lower atmosphere; these processes have very different impacts on HO(x) loss and regeneration.

  2. Synthesis and Characterization of L-Lysine Conjugated Silver Nanoparticles Smaller Than 10 nM

    PubMed Central

    Bonor, Jeremy; Reddy, Vandhana; Akkiraju, Hemanth; Dhurjati, Prasad; Nohe, Anja

    2015-01-01

    A rapid and convenient batch method for synthesizing lysine-conjugated silver nanoparticles of approximately 5 nm of size was developed. Nanoparticles of size less than 100 nm exhibit significant medical potential. L-Lysine demonstrates potential for therapeutic applications and silver nanoparticles are an optimal choice for drug delivery because of its intrinsic anti-platelet, anti-bacterial and anti-inflammatory capabilities. Current synthesis protocols for Lysine-capped particles under 10 nm are time consuming and tedious and allow only for the sythesis of small quantities of particles. The synthesis of Lysin-capped silver nanoparticles was based on the reaction in which AgNO3 was reduced by excess NaBH4. L-Lysine, a known essential amino acid, served as the capping agent to minimize initial aggregation. The particles were then separated by size chromatography. Capping occurred through the amide bond on L-Lysine as determined by FT-IR. The conjugation of the particle to the amide bond is important, since this leaves the amino group of Lysine open to further modifications. The particles were further characterized in regards to their shape, size and stability. Finally we demonstrated that the synthesized particles exhibit limited to no toxicity in cells, using HEK 293 cell line as a model system. Our sythesis protocol can be successfully used for scale-up and synthesis of high quantities of nanoparticles. PMID:26478827

  3. Effects of amines on formation of sub-3 nm particles and their subsequent growth

    SciTech Connect

    Yu H.; McGraw R.; Lee S.-H.

    2012-01-28

    Field observations and quantum chemical calculations suggest that amines can be important for formation of nanometer size particles. Amines and ammonia often have common atmospheric emission sources and the similar chemical and physical properties. While the effects of ammonia on aerosol nucleation have been previously investigated, laboratory studies of homogeneous nucleation involving amines are lacking. We have made kinetics studies of multicomponent nucleation (MCN) with sulfuric acid, water, ammonia and amines under conditions relevant to the atmosphere. Low concentrations of aerosol precursors were measured with chemical ionization mass spectrometers (CIMS) to provide constrained precursor concentrations needed for nucleation. Particle sizes larger than {approx}2 nm were measured with a nano-differential mobility analyzer (nano-DMA), and number concentrations of particles larger than {approx}1 nm were measured with a particle size magnifier (PSM). Our observations provide the laboratory evidence that amines indeed can participate in aerosol nucleation and growth at the molecular cluster level. The enhancement of particle number concentrations due to several atmospherically relevant amine compounds and ammonia were related to the basicity of these compounds, indicating that acid-base reactions may contribute to the formation of sub-3 nm particles.

  4. Photooxidation of arsenite under 254 nm irradiation with a quantum yield higher than unity.

    PubMed

    Ryu, Jungho; Monllor-Satoca, Damián; Kim, Dong-hyo; Yeo, Jiman; Choi, Wonyong

    2013-08-20

    Arsenite (As(III)) in water was demonstrated to be efficiently oxidized to arsenate (As(V)) under 254 nm UV irradiation without needing any chemical reagents. Although the molar absorption coefficient of As(III) at 254 nm is very low (2.49 ± 0.1 M(-1)cm(-1)), the photooxidation proceeded with a quantum yield over 1.0, which implies a chain of propagating oxidation cycles. The rate of As(III) photooxidation was highly enhanced in the presence of dissolved oxygen, which can be ascribed to its dual role as an electron acceptor of photoexcited As(III) and a precursor of oxidizing radicals. The in situ production of H2O2 was observed during the photooxidation of As(III) and its subsequent photolysis under UV irradiation produced OH radicals. The addition of tert-butyl alcohol as OH radical scavenger significantly reduced (but not completely inhibited) the oxidation rate, which indicates that OH radicals as well as superoxide serve as an oxidant of As(III). Superoxide, H2O2, and OH radicals were all in situ generated from the irradiated solution of As(III) in the presence of dissolved O2 and their subsequent reactions with As(III) induce the regeneration of some oxidants, which makes the overall quantum yield higher than 1. The homogeneous photolysis of arsenite under 254 nm irradiation can be also proposed as a new method of generating OH radicals.

  5. Facile Synthesis of Sub-20 nm Silver Nanowires through a Bromide-Mediated Polyol Method.

    PubMed

    da Silva, Robson Rosa; Yang, Miaoxin; Choi, Sang-Il; Chi, Miaofang; Luo, Ming; Zhang, Chao; Li, Zhi-Yuan; Camargo, Pedro H C; Ribeiro, Sidney José Lima; Xia, Younan

    2016-08-23

    Essentially all of the Ag nanowires reported in the literature have sizes larger than 30 nm in diameter. In this article, we report a simple and robust approach to the synthesis of Ag nanowires with diameters below 20 nm and aspect ratios over 1000 using a one-pot polyol method. The Ag nanowires took a penta-twinned structure, and they could be obtained rapidly (<35 min) and in high morphology purity (>85% of the as-obtained solid product) under atmospheric pressure. The key to the success of this synthesis is to restrain the nanowires from lateral growth by employing both Br(-) ions and poly(vinylpyrrolidone) with a high molecular weight of 1 300 000 g/mol to cap the {100} side faces, together with the use of a syringe pump to slowly introduce AgNO3 into the reaction solution. By optimizing the ratios between the capping agents and AgNO3, we were able to slow down the reduction kinetics and effectively direct the Ag nanowires to grow along the longitudinal direction only. The nanowires showed great mechanical flexibility and could be bent with acute angles without breaking. Because of their small diameters, the transverse localized surface plasmon resonance peak of the Ag nanowires could be pushed down to the ultraviolet region, below 400 nm, making them ideal conductive elements for the fabrication of touch screens, solar cells, and smart windows.

  6. New advanced BARC and gap fill materials based on sublimate reduction for 193nm lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Shinjo, Tetsuya; Sakaida, Yasushi; Horiguchi, Yusuke; Nakajima, Yasuyuki

    2006-03-01

    Innovative technologies are required by integrated circuit manufacturers to create smaller feature sizes on chips. According to the semiconductor roadmap, feature sizes are slated to be as small as 45nm in 2007, and sizes will be continued to decrease in the following years. Suitable absorbance, Lower etch resistance, straight photoresist profiles, wider D.O.F., thinner film thickness, more effective barrier properties to reduce resist poisoning, and sublimate reduction for defect free coating are the major concerns to be taken into consideration for new BARC and gap fill materials. In this paper, the study of sublimate reduction in the new BARC and gap fill materials was investigated. The effect of sublimate reduction from BARC in bake process is related to decrease defect number. We will introduce new BARC and gap fill material consisted of the polymers with self crosslink-reaction system. In addition of sublimate reduction data, resist profiles and 130 nm via fill performance in via- first dual damascene process presented here would show clearly these materials are ready to be investigated into mass production of 90 nm node IC devices and beyond.

  7. Bactericidal effect of the 908 nm diode laser on Enterococcus faecalis in infected root canals

    PubMed Central

    Preethee, Thomas; Kandaswamy, Deivanayagam; Arathi, Ganesh; Hannah, Rosaline

    2012-01-01

    Aim: The aim of this study is to evaluate the bactericidal effect of 908 nm diode laser in conjunction with various irrigation regimes in disinfection of apical third of root dentin. Materials and Methods: Sixty prepared teeth with single canals were contaminated with Enterococcus faecalis. The specimens were divided into 6 groups (n = 10): Group 1 and 3 and 5 were subjected to chemo-mechanical preparation using 5.25% sodium hypochlorite (NaOCl), 17% Ethylenediaminetetraacetic acid (EDTA); 1.3% NaOCl, MTAD (mixture of doxycycline, citric acid and a detergent (Tween 80); and, 8.5% saline, respectively followed by 908 nm diode laser irradiation; Group 2 and 4, followed the same procedure as Group1 and 3, however without laser irradiation; and, Group 6, rinsed with saline solution (control). Dentin shavings from apical third were analyzed for the presence of E. faecalis using culture method and Polymerase Chain reaction (PCR). Results: One-way Analysis of variance showed statistically significant differences between the laser irradiated groups, non irradiated groups and the control group. Conclusion: 908 nm diode used in conjunction with conventional chemomechanical techniques demonstrated a significant elimination of E. faecalis in the apical third of root dentin. PMID:22368335

  8. Taking the X Architecture to the 65-nm technology node

    NASA Astrophysics Data System (ADS)

    Sarma, Robin C.; Smayling, Michael C.; Arora, Narain; Nagata, Toshiyuki; Duane, Michael P.; Shah, Santosh; Keston, Harris J.; Oemardani, Shiany

    2004-05-01

    The X Architecture is a new way of orienting the interconnect on an integrated circuit using diagonal pathways, as well as the traditional right-angle, or Manhattan, configuration. By enabling designs with significantly less wire and fewer vias, the X Architecture can provide substantial improvements in chip performance, power consumption and cost. Members of the X Initiative semiconductor supply chain consortium have demonstrated the production worthiness of the X Architecture at the 130-nm and 90-nm process technology nodes. This paper presents an assessment of the manufacturing readiness of the X Architecture for the 65-nm technology node. The extent to which current production capabilities in mask writing, lithography, wafer processing, inspection and metrology can be used is discussed using the results from a 65-nm test chip. The project was a collaborative effort amongst a number of companies in the IC fabrication supply chain. Applied Materials fabricated the 65-nm X Architecture test chip at its Maydan Technology Center and leveraged the technology of other X Initiative members. Cadence Design Systems provided the test structure design and chip validation tools, Dai Nippon Printing produced the masks and Canon"s imaging system was employed for the photolithography.

  9. Absorption spectrum of DNA for wavelengths greater than 300 nm

    SciTech Connect

    Sutherland, J.C.; Griffin, K.P.

    1981-06-01

    Although DNA absorption at wavelengths greater than 300 nm is much weaker than that at shorter wavelengths, this absorption seems to be responsible for much of the biological damage caused by solar radiation of wavelengths less than 320 nm. Accurate measurement of the absorption spectrum of DNA above 300 nm is complicated by turbidity characteristic of concentrated solutions of DNA. We have measured the absorption spectra of DNA from calf thymus, Clostridium perfringens, Escherichia coli, Micrococcus luteus, salmon testis, and human placenta using procedures which separate optical density due to true absorption from that due to turbidity. Above 300 nm, the relative absorption of DNA increases as a function of guanine-cytosine content, presumably because the absorption of guanine is much greater than the absorption of adenine at these wavelengths. This result suggests that the photophysical processes which follow absorption of a long-wavelength photon may, on the average, differ from those induced by shorter-wavelength photons. It may also explain the lower quantum yield for the killing of cells by wavelengths above 300 nm compared to that by shorter wavelengths.

  10. A cesium bromide photocathode excited by 405 nm radiation

    NASA Astrophysics Data System (ADS)

    Maldonado, J. R.; Cheng, Y. T.; Pianetta, P.; Pease, Fabian W.; Hesselink, L.

    2014-07-01

    In several applications, such as electron beam lithography and X-ray differential phase contrast imaging, there is a need for a free electron source with a current density at least 10 A/cm2 yet can be shaped with a resolution down to 20 nm and pulsed. Additional requirements are that the source must operate in a practical demountable vacuum (>1e-9 Torr) and be reasonably compact. In prior work, a photocathode comprising a film of CsBr on metal film on a sapphire substrate met the requirements except it was bulky because it required a beam (>10 W/cm2) of 257 nm radiation. Here, we describe an approach using a 405 nm laser which is far less bulky. The 405 nm laser, however, is not energetic enough to create color centers in CsBr films. The key to our approach is to bombard the CsBr film with a flood beam of about 1 keV electrons prior to operation. Photoelectron efficiencies in the range of 100-1000 nA/mW were demonstrated with lifetimes exceeding 50 h between electron bombardments. We suspect that the electron bombardment creates intraband color centers whence electrons can be excited by the 405 nm photons into the conduction band and thence into the vacuum.

  11. Germanium on double-SOI photodetectors for 1550-nm operation

    NASA Astrophysics Data System (ADS)

    Dosunmu, Olufemi I.; Cannon, Douglas D.; Emsley, Matthew K.; Ghyselen, Bruno; Liu, Jifeng; Kimerling, Lionel C.; Unlu, M. S.

    2004-06-01

    We have fabricated and characterized the first resonant cavity enhanced (RCE) germanium photodetectors on double silicon-on-insulator substrates (Ge/DSOI) for operation around the 1550 nm communication wavelength. The Ge layer is grown through a novel two-step UHV/CVD process, while the underlying double-SOI substrate is formed through an ion-cut process. Absorption measurements of an undoped Ge-on-Si (Ge/Si) structure reveal a red-shift of the Ge absorption edge in the NIR, due primarily to a strain-induced bandgap narrowing within the Ge film. By using the strained-Ge absorption coefficients extracted from the absorption measurements, in conjunction with the known properties of the DSOI substrate, we were able to design strained-Ge/DSOI photodetectors optimized for 1550 nm operation. We predict a quantum efficiency of 76% at 1550 nm for a Ge layer thickness of only 860 nm as a result of both strain-induced and resonant cavity enhancement, compared to 2.3% for the same unstrained Ge thickness in a single-pass configuration. We also estimate a transit-time limited bandwidth of 28 GHz. Although the fabricated Ge/DSOI photodetectors were not optimized for 1550 nm operation, we were able to demonstrate an over four-fold improvement in the quantum efficiency, compared to its single-pass counterpart.

  12. Process liability evaluation for beyond 22nm node using EUVL

    NASA Astrophysics Data System (ADS)

    Tawarayama, Kazuo; Aoyama, Hajime; Matsunaga, Kentaro; Arisawa, Yukiyasu; Uno, Taiga; Magoshi, Shunko; Kyoh, Suigen; Nakajima, Yumi; Inanami, Ryoichi; Tanaka, Satoshi; Kobiki, Ayumi; Kikuchi, Yukiko; Kawamura, Daisuke; Takai, Kosuke; Murano, Koji; Hayashi, Yumi; Mori, Ichiro

    2010-04-01

    Extreme ultraviolet lithography (EUVL) is the most promising candidate for the manufacture of devices with a half pitch of 32 nm and beyond. We are now evaluating the process liability of EUVL in view of the current status of lithography technology development. In a previous study, we demonstrated the feasibility of manufacturing 32-nm-node devices by means of a wafer process that employed the EUV1, a full-field step-and-scan exposure tool. To evaluate yield, a test pattern was drawn on a multilayer resist and exposed. After development, the pattern was replicated in SiO2 film by etching, and metal wires were formed by a damascene process. Resolution enhancement is needed to advance to the 22- nm node and beyond, and a practical solution is off-axis illumination (OAI). This paper presents the results of a study on yield improvement that used a 32-nm-node test chip, and also clarifies a critical issue in the use of EUVL in a wafer process for device manufacture at the 22-nm node and beyond.

  13. Imaging CIN(3) photodissociation from 234 to 280 nm.

    PubMed

    Samartzis, Peter C; Hansen, Nils; Wodtke, Alec M

    2006-07-07

    We report Cl((2)P(3/2)) and Cl*((2)P(1/2)) fragment images following ClN(3) photolysis in the 234-280 nm region measured by velocity map imaging. Kinetic energy distributions change shape with photolysis wavelength from bimodal at 234 and 240 nm to single peak at 266 and 280 nm. Where two peaks exist, their ratio is significantly different for Cl and Cl* fragments. The single peak of 266 and 280 nm and the faster peak at 234 and 240 nm are assigned to a Cl + linear-N(3) dissociation channel, in agreement with previous work. The slow peak in the bimodal distributions is assigned to the formation of a high energy form (HEF) of N(3). Candidates for the identity of HEF-N(3) are discussed. Combining our data with photofragmentation translational spectroscopy results, we determined the threshold for the appearance of HEF-N(3) at 4.83 +/- 0.17 eV photolysis energy. This threshold behavior is similar to recently reported results on the wavelength dependence of HN(3) photolysis, where the threshold was associated with a ring closed isomer of HN(3) on the S(1) potential energy surface. We also note that the HEF-N(3) formation threshold observed for ClN(3) occurs where the energy available to the products equals the isomerization barrier from linear to cyclic-N(3).

  14. 100-nm gate lithography for double-gate transistors

    NASA Astrophysics Data System (ADS)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  15. Double patterning for 32nm and below: an update

    NASA Astrophysics Data System (ADS)

    Finders, Jo; Dusa, Mircea; Vleeming, Bert; Megens, Henry; Hepp, Birgitt; Maenhoudt, Mireille; Cheng, Shaunee; Vandeweyer, Tom

    2008-03-01

    Double patterning lithography - either with two litho and etch steps or through the use of a sacrificial spacer layer, have equal complexity and particularly tight requirements on CDU and Overlay. Both techniques pose difficult challenges to process control, metrology and integration, but seem feasible for the 32nm node. In this paper, we report results in exploring CDU and overlay performance at 32nm 1/2 pitch resolution of two double patterning technology options, Dual Photo Etch, LELE and sidewall spacer with sacrificial layer. We discuss specific aspects of CD control present in any double patterning lithography, the existence of multiple populations of lines and spaces, with overlay becoming part of CDU budget. The existence of multiple and generally uncorrelated CD populations, demands utilization of full field and full wafer corrections to bring together the CDU of these multiple populations in order to meet comparable 10% CDU as in single exposure. We present experimental results of interfield and intrafield CD and overlay statistical and spatial distributions confirming capability to improve these distributions to meet dimensional and overlay control levels required by 32nm node. After compensation, we achieved a CDU control for each population, of 2nm or better and 3nm overlay on multiple wafers and multiple state of art, hyper NA immersion scanners. Results confirmed our assumptions for existence of multiple CDU populations entangled overlay into CDU.

  16. [Reactions to food].

    PubMed

    Halvorsen, R; Eggesb M; Botten, G

    1995-12-10

    Adverse reactions to food occur in about 1-2% of the population, but are reported more frequently by patients. Most reactions to food are not caused by allergy. IgE-mediated food reactions are well known and of major clinical significance owing to their potentially dangerous, even life-threatening character. Adverse reactions to food can also be caused by immunological mechanisms other than IgE-mediated reactions such as, enzyme deficiencies, active pharmacological substances in food and psychological mechanisms. Double-blind provocation is the only way to diagnose a positive reaction to a food item with some certainty. Regretably no objective measures for food reactions exist.

  17. Photochemical cycloaddition reactions of cyanoacetylene and dicyanoacetylene

    NASA Technical Reports Server (NTRS)

    Ferris, J. P.; Guillemin, J. C.

    1990-01-01

    Photolysis of cyanoacetylene with 185- or 206-nm light yields 1,3,5-tricyanobenzene while 254-nm radiation yields a mixture of tetracyanocyclooctatetraenes, 1,2,4- and 1,3,5-tricyanobenzene. A polymer of cyanoacetylene is the major photoproduct. 1,3,5-Tricarbomethoxybenzene was the only photoproduct identified from the irradiation of methyl propiolate at 254 nm. Mono-, di-, and tricyanobenzenes are formed by irradiation of mixtures of acetylene and cyanoacetylene at 185, 206, and 254 nm along with trace amounts of cyclooctatetraenes. No photoadducts were detected on photolysis of mixtures of cyanoacetylene and CO or HCN. The tetracyanocyclooctatetraene structures were established by UV, MS, and NMR analyses. The 1H NMR of the product mixture exhibited a singlet at delta 7.028 consistent with either 1 or 2 and two singlets at delta 6.85 and 6.91 assigned to 3. Photolysis of mixtures of dicyanoacetylene and acetylene with either 185- or 206-nm light yielded 1,2-dicyanobenzene and (E,Z)-1-buten-3-yne-1,4-dicarbonitrile. These products were also obtained using 254-nm light along with a mixture of tetracyanocyclooctatetraenes. The same three singlets were observed in this product mixture as were observed in the tetracyanocyclooctatetraenes obtained from cyanoacetylene. From this observation it was concluded that the delta 7.02 signal is due to 2 and not 1. The photolysis of cyanoacetylene and dicyanoacetylene in the presence of ethylene with 185-nm light yields 1-cyanocylobutene and 1,2-dicyanocyclobutene, respectively. 2-Cyanobutadiene and 2,3-dicyanobutadiene are the photoproducts with 254-nm light. Reaction pathways are proposed to explain these findings.

  18. Photochemical cycloaddition reactions of cyanoacetylene and dicyanoacetylene

    NASA Technical Reports Server (NTRS)

    Ferris, J. P.; Guillemin, J. C.

    1990-01-01

    Photolysis of cyanoacetylene with 185- or 206-nm light yields 1,3,5-tricyanobenzene while 254-nm radiation yields a mixture of tetracyanocyclooctatetraenes, 1,2,4- and 1,3,5-tricyanobenzene. A polymer of cyanoacetylene is the major photoproduct. 1,3,5-Tricarbomethoxybenzene was the only photoproduct identified from the irradiation of methyl propiolate at 254 nm. Mono-, di-, and tricyanobenzenes are formed by irradiation of mixtures of acetylene and cyanoacetylene at 185, 206, and 254 nm along with trace amounts of cyclooctatetraenes. No photoadducts were detected on photolysis of mixtures of cyanoacetylene and CO or HCN. The tetracyanocyclooctatetraene structures were established by UV, MS, and NMR analyses. The 1H NMR of the product mixture exhibited a singlet at delta 7.028 consistent with either 1 or 2 and two singlets at delta 6.85 and 6.91 assigned to 3. Photolysis of mixtures of dicyanoacetylene and acetylene with either 185- or 206-nm light yielded 1,2-dicyanobenzene and (E,Z)-1-buten-3-yne-1,4-dicarbonitrile. These products were also obtained using 254-nm light along with a mixture of tetracyanocyclooctatetraenes. The same three singlets were observed in this product mixture as were observed in the tetracyanocyclooctatetraenes obtained from cyanoacetylene. From this observation it was concluded that the delta 7.02 signal is due to 2 and not 1. The photolysis of cyanoacetylene and dicyanoacetylene in the presence of ethylene with 185-nm light yields 1-cyanocylobutene and 1,2-dicyanocyclobutene, respectively. 2-Cyanobutadiene and 2,3-dicyanobutadiene are the photoproducts with 254-nm light. Reaction pathways are proposed to explain these findings.

  19. Reaction Selectivity in Heterogeneous Catalysis

    SciTech Connect

    Somorjai, Gabor A.; Kliewer, Christopher J.

    2009-02-02

    The understanding of selectivity in heterogeneous catalysis is of paramount importance to our society today. In this review we outline the current state of the art in research on selectivity in heterogeneous catalysis. Current in-situ surface science techniques have revealed several important features of catalytic selectivity. Sum frequency generation vibrational spectroscopy has shown us the importance of understanding the reaction intermediates and mechanism of a heterogeneous reaction, and can readily yield information as to the effect of temperature, pressure, catalyst geometry, surface promoters, and catalyst composition on the reaction mechanism. DFT calculations are quickly approaching the ability to assist in the interpretation of observed surface spectra, thereby making surface spectroscopy an even more powerful tool. HP-STM has revealed three vitally important parameters in heterogeneous selectivity: adsorbate mobility, catalyst mobility, and selective site-blocking. The development of size controlled nanoparticles from 0.8 to 10 nm, of controlled shape, and of controlled bimetallic composition has revealed several important variables for catalytic selectivity. Lastly, DFT calculations may be paving the way to guiding the composition choice for multi-metallic heterogeneous catalysis for the intelligent design of catalysts incorporating the many factors of selectivity we have learned.

  20. Ion Imaging Studies of CH_2I_2 Photodissociation at 248 NM

    NASA Astrophysics Data System (ADS)

    Lehman, Julia H.; Li, Hongwei; Lester, Marsha I.

    2013-06-01

    CH_2I_2 plays an important role in atmospheric chemistry as a significant natural source of organohalide compounds. The photodissociation dynamics of CH_2I_2 in the ultraviolet range of 277-305 nm via the two lowest B_1 excited states has been well studied using one-color velocity map ion imaging (VMI) and photofragment translational spectroscopy. In this two-color experimental study, CH_2I_2 is photodissociated by 248 nm via the B_2 or A_1 excited states to give rise to CH_2I and I (^2P_3_/_2) or I^* (^2P_1_/_2). The iodine atoms are then state selectively ionized using a (2+1) resonance-enhanced multiphoton ionization process near 310 nm and detected by VMI. Preliminary results show about 85% of the available energy is being funneled into the internal energy of the CH_2I fragment, consistent with prior infrared emission results of Baughcum and Leone. The anisotropy parameter derived from the image indicates this is a fast dissociation process and reflects the character of the electronic transition. The internal energy distribution of the CH_2I fragment is of particular interest because of its subsequent reaction with O_2 in a near thermo-neutral reaction to produce the smallest Criegee intermediate, CH_2OO. We anticipate that the internal energy contained in CH_2I will likely be carried into CH_2OO. S. L. Baughcum and S. R. Leone, J. Chem. Phys. 72, 6531 (1980).

  1. 670 nm light mitigates oxygen-induced degeneration in C57BL/6J mouse retina

    PubMed Central

    2013-01-01

    Background Irradiation with light wavelengths from the far red (FR) to the near infrared (NIR) spectrum (600 nm -1000 nm) has been shown to have beneficial effects in several disease models. In this study, we aim to examine whether 670 nm red light pretreatment can provide protection against hyperoxia-induced damage in the C57BL/6J mouse retina. Adult mice (90–110 days) were pretreated with 9 J/cm2 of 670 nm light once daily for 5 consecutive days prior to being placed in hyperoxic environment (75% oxygen). Control groups were exposed to hyperoxia, but received no 670 nm light pretreatment. Retinas were collected after 0, 3, 7, 10 or 14 days of hyperoxia exposure (n = 12/group) and prepared either for histological analysis, or RNA extraction and quantitative polymerase chain reaction (qPCR). Photoreceptor damage and loss were quantified by counting photoreceptors undergoing cell death and measuring photoreceptor layer thickness. Localization of acrolein, and cytochrome c oxidase subunit Va (Cox Va) were identified through immunohistochemistry. Expression of heme oxygenase-1 (Hmox-1), complement component 3 (C3) and fibroblast growth factor 2 (Fgf-2) genes were quantified using qPCR. Results The hyperoxia-induced photoreceptor loss was accompanied by reduction of metabolic marker, Cox Va, and increased expression of oxidative stress indicator, acrolein and Hmox-1. Pretreatment with 670 nm red light reduced expression of markers of oxidative stress and C3, and slowed, but did not prevent, photoreceptor loss over the time course of hyperoxia exposure. Conclusion The damaging effects of hyperoxia on photoreceptors were ameliorated following pretreatment with 670 nm light in hyperoxic mouse retinas. These results suggest that pretreatment with 670 nm light may provide stability to photoreceptors in conditions of oxidative stress. PMID:24134095

  2. Novel EUV resist development for sub-14nm half pitch

    NASA Astrophysics Data System (ADS)

    Hori, Masafumi; Naruoka, Takehiko; Nakagawa, Hisashi; Fujisawa, Tomohisa; Kimoto, Takakazu; Shiratani, Motohiro; Nagai, Tomoki; Ayothi, Ramakrishnan; Hishiro, Yoshi; Hoshiko, Kenji; Kimura, Toru

    2015-03-01

    Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). In this paper, we investigated and developed new chemically amplified resist (CAR) materials to achieve sub-14 nm hp resolution. We found that both resolution and sensitivity were improved simultaneously by controlling acid diffusion length and efficiency of acid generation using novel PAG and sensitizer. EUV lithography evaluation results obtained for new CAR on Micro Exposure Tool (MET) and NXE3300 system are described and the fundamentals are discussed.

  3. High power narrowband 589 nm frequency doubled fibre laser source.

    PubMed

    Taylor, Luke; Feng, Yan; Calia, Domenico Bonaccini

    2009-08-17

    We demonstrate high-power high-efficiency cavity-enhanced second harmonic generation of an in-house built ultra-high spectral density (SBS-suppressed) 1178 nm narrowband Raman fibre amplifier. Up to 14.5 W 589 nm CW emission is achieved with linewidth Delta nu(589) < 7 MHz in a diffraction-limited beam, with peak external conversion efficiency of 86%. The inherently high spectral and spatial qualities of the 589 nm source are particularly suited to both spectroscopic and Laser Guide Star applications, given the seed laser can be easily frequency-locked to the Na D(2a) emission line. Further, we expect the technology to be extendable, at similar or higher powers, to wavelengths limited only by the seed-pump-pair availability. (c) 2009 Optical Society of America

  4. Large-scale lithography for sub-500nm features

    NASA Astrophysics Data System (ADS)

    Pelzer, R. L.; Steininger, T.; Belier, Benoit; Julie, Gwenaelle

    2006-04-01

    The interest in micro- and nanotechnologies has grown rapidly in the last years. The applications are versatile and different techniques found its way into several research domains as optics, electronics, magnetism, fluidics, etc. In all of these fields integration of more and more functions on steadily decreasing device dimensions lead to an increase in structural density and feature size. Expensive and slow processes utilizing projection steppers or e-beam direct writer equipment are used to fabricate nm features today. A high throughput and cost effective method adapted on a standard mask aligner will be demonstrated, making features of below 300nm available on wafer-level. We will demonstrate results of 4 different resists exposed on a DUV proximity aligner and plasma etched for optical and biological applications in the sub-300nm range.

  5. High Power 938nm Cladding Pumped Fiber Laser

    SciTech Connect

    Dawson, J; Beach, R; Brobshoff, A; Liao, Z; Payne, S; Pennington, D; Taylor, L; Hackenberg, W; Bonaccini, D

    2002-12-26

    We have developed a Nd:doped cladding pumped fiber amplifier, which operates at 938nm with greater than 2W of output power. The core co-dopants were specifically chosen to enhance emission at 938nm. The fiber was liquid nitrogen cooled in order to achieve four-level laser operation on a laser transition that is normally three level at room temperature, thus permitting efficient cladding pumping of the amplifier. Wavelength selective attenuation was induced by bending the fiber around a mandrel, which permitted near complete suppression of amplified spontaneous emission at 1088nm. We are presently seeking to scale the output of this laser to 10W. We will discuss the fiber and laser design issues involved in scaling the laser to the 10W power level and present our most recent results.

  6. Incoherent magnetization reversal in 30-nm Ni particles

    NASA Astrophysics Data System (ADS)

    Ross, C. A.; Chantrell, R.; Hwang, M.; Farhoud, M.; Savas, T. A.; Hao, Y.; Smith, Henry I.; Ross, F. M.; Redjdal, M.; Humphrey, F. B.

    2000-12-01

    The magnetic properties of a 100-nm-period large-area array of regular, 30-nm polycrystalline nickel particles have been studied. The particles are found to reverse incoherently, and their hysteresis behavior has been compared with a computational model over a range of temperatures. Excellent agreement with the model is obtained, indicating that switching of the particles is dominated by the reversal of approximately 10-nm-diameter volumes within each particle. These switching volumes are identified with the columnar grains in the polycrystalline nickel, showing that the microstructure determines the magnetic behavior of the particles. This explains the anisotropy distribution and the onset of superparamagnetism in the sample. Incoherent reversal occurs even though the particles are only 1.5 times the exchange length in nickel, a size at which nearly uniform rotation is expected to occur if the particles were homogeneous.

  7. Interaction between Nm23 and the tumor suppressor VHL.

    PubMed

    Lin, Chih-Hung; Dammai, Vincent; Adryan, Boris; Hsu, Tien

    2015-02-01

    Among the anti-tumor genes (tumor suppressors and metastasis suppressors), the von-Hippel Lindau gene and the Nm23 family of genes are among the more intriguing ones. Both are small (long and short forms of VHL are 30 and 19 kD, respectively, and Nm23 is ~17 kD), and both possess diverse molecular and cellular functions. Despite extensive studies, the entire spectra of functions and the molecular function-phenotype correlation of these two proteins have not been completely elucidated. In this report, we present data showing these two proteins interact physically. We also summarize and confirm the previous studies that demonstrated the endocytic function of these two genes and further show that the endocytic function of VHL is mediated through the activity of Nm23. These functional and molecular interactions are evolutionarily conserved from Drosophila to human.

  8. Characterization of 193-nm resists for optical mask manufacturing

    NASA Astrophysics Data System (ADS)

    Fosshaug, Hans; Paulsson, Adisa; Berzinsh, Uldis; Magnusson, Helena

    2004-12-01

    The push for smaller linewidths and tighter critical dimension (CD) budgets forced manufacturers of optical pattern generators to move from traditional i-line to deep ultraviolet (DUV) resist processing. Entering the DUV area was not without pain. The process conditions, especially exposure times of a few hours, put very tough demands on the resist material itself. However, today 248nm laser writers are fully operating using a resist process that exhibits the requested resolution, CD uniformity and environmental stability. The continuous demands of CD performance made Micronic to investigate suitable resist candidate materials for the next generation optical writer using 193nm excimer laser exposure. This paper reports on resist benchmarking of one commercial as well as several newly developed resists. The resists were investigated using a wafer scanner. The data obtained illustrate the current performance of 193nm photoresists, and further demonstrate that despite good progress in resist formulation optimization, the status is still a bit from the required lithographic performance.

  9. A new solar reference spectrum from 165 to 3088 nm

    NASA Astrophysics Data System (ADS)

    Damé, Luc; Meftah, Mustapha; Bolsée, David; Pereira, Nuno; Bekki, Slimane; Hauchecorne, Alain; Irbah, Abdenour; Cessateur, Gaël; Sluse, Dominique

    2017-04-01

    Since April 5, 2008 and until February 15, 2017 the SOLAR/SOLSPEC spectro-radiometer on the International Space Station performed accurate measurements of Solar Spectral Irradiance (SSI) from the far ultraviolet to the infrared (165 nm to 3088 nm). These measurements are of primary importance for a better understanding of solar physics and of the impact of solar variability on climate (via Earth's atmospheric photochemistry). In particular, a new reference solar spectrum is established covering most of the unusual solar cycle 24 from minimum in 2008 to maximum. Temporal variability in the UV (165 to 400 nm) is presented in several wavelengths bands. These results are possible thanks to revised engineering corrections, improved calibrations and new procedures to account for thermal and aging advanced corrections. Uncertainties on these measurements are evaluated and compare favorably with other instruments.

  10. 32 nm imprint masks using variable shape beam pattern generators

    NASA Astrophysics Data System (ADS)

    Selinidis, Kosta; Thompson, Ecron; Schmid, Gerard; Stacey, Nick; Perez, Joseph; Maltabes, John; Resnick, Douglas J.; Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-05-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL ®) is a unique method that has been designed from the beginning to enable precise overlay for creating multilevel devices. A photocurable low viscosity monomer is dispensed dropwise to meet the pattern density requirements of the device, thus enabling imprint patterning with a uniform residual layer across a field and across entire wafers. Further, S-FIL provides sub-100 nm feature resolution without the significant expense of multi-element, high quality projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of templates. For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x templates with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub 32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the template is discussed and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  11. Full-field imprinting of sub-40 nm patterns

    NASA Astrophysics Data System (ADS)

    Yeo, Jeongho; Kim, Hoyeon; Eynon, Ben

    2008-03-01

    Imprint lithography has been included on the ITRS Lithography Roadmap at the 32, 22 and 16 nm nodes. Step and Flash Imprint Lithography (S-FIL (R)) is a unique patterning method that has been designed from the beginning to enable precise overlay to enable multilevel device fabrication. A photocurable low viscosity resist is dispensed dropwise to match the pattern density requirements of the device, thus enabling patterning with a uniform residual layer thickness across a field and across multiple wafers. Further, S-FIL provides sub-50 nm feature resolution without the significant expense of multi-element projection optics or advanced illumination sources. However, since the technology is 1X, it is critical to address the infrastructure associated with the fabrication of imprint masks (templates). For sub-32 nm device manufacturing, one of the major technical challenges remains the fabrication of full-field 1x imprint masks with commercially viable write times. Recent progress in the writing of sub-40 nm patterns using commercial variable shape e-beam tools and non-chemically amplified resists has demonstrated a very promising route to realizing these objectives, and in doing so, has considerably strengthened imprint lithography as a competitive manufacturing technology for the sub-32nm node. Here we report the first imprinting results from sub-40 nm full-field patterns, using Samsung's current flash memory production device design. The fabrication of the imprint mask and the resulting critical dimension control and uniformity are discussed, along with image placement results. The imprinting results are described in terms of CD uniformity, etch results, and overlay.

  12. CVD-diamond external cavity Raman laser at 573 nm.

    PubMed

    Mildren, Richard P; Butler, James E; Rabeau, James R

    2008-11-10

    Recent progress in diamond growth via chemical vapor deposition (CVD) has enabled the manufacture of single crystal samples of sufficient size and quality for realizing Raman laser devices. Here we report an external cavity CVD-diamond Raman laser pumped by a Q-switched 532 nm laser. In the investigated configuration, the dominant output coupling was by reflection loss at the diamond's uncoated Brewster angle facets caused by the crystal's inherent birefringence. Output pulses of wavelength 573 nm with a combined energy of 0.3 mJ were obtained with a slope efficiency of conversion of up to 22%.

  13. Evaluation Test of Radar Chronograph Set, NM87

    DTIC Science & Technology

    1974-12-01

    i.wppvR^nnnwpmqiliPV^^V^P pr IIIW«IIIII. .fp^t^, wi "Jn.’IHI ITW^LASSIFIED »ECUWTV CLM1IFICATI0M Of TMH ^ACC (***> t>— Bnfn4) REPORT DOCUMENTATION...through March 1974 to determine the capability of the NM87 to chrono graph standard cannon artillery. The NM87 «as subjected to laboratory...on the chrono - graph readout are valid muasle velocity measurements. The chronographlng range for this system, a maximum of 3* metera, will be

  14. Development of polymer membranes for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Eschbach, Florence; Tregub, Alex; Orvek, Kevin; Foster, Corey; Lo, Fu-Chang; Matsukura, Ikuo; Tsushima, Nana

    2004-05-01

    Fluoropolymers were/are successfully used for pellicle manufacturing in 248 and 193 nm lithography. However, all known fluoropolymers rapidly degrade when exposed to high-energy 157 nm irradiation. Lack of suitable polymer "soft" pellicle has become one of the major obstacles for implementing 157 nm lithography. The goal of this research was to investigate the photodegradation mechanisms in fluoropolymers under 157 nm irradiation using various analytical techniques, and establish correlation between polymer structure and transparency/durability. Various polymer platforms, developed by Asahi Glass Corporation, as well as model polymer based on industrially available materials, have been employed in this study. Polymer structures have been analyzed using solution NMR, FTIR, Raman spectroscopy, TOF-SIMS, nanoindentation, outgassing, contact angle, ellipsometry, refractometry, n and k measurements. Transparency and durability of polymer membranes under 157 nm irradiation were established using an F2 157 nm laser as a source of irradiation, and an environmentally controlled chamber. As the result of this study, photodegradation mechanism for some of the tested polymers was tentatively suggested as cleavage of carbonyl, CO, and/or CFO bonds. Additionally, the following general conclusions have been made: environmental moisture, gas environment, and polymer/adhesive solvents affect structure and durability of the exposed polymers; "skin" surface layer can be formed on the surface of the irradiated polymer; polymer membranes are thinning under 157 nm irradiation; polar groups are formed on the irradiated surface. Effects of gas environment, exposure conditions, technology of the sample preparation on the photodegradation mechanism and kinetics were studied. Possible photodegradation pathways have been derived and assessed. Dependence of polymer durability and transparency on such structural features as number of carbon atoms within the ring, oxygen content, type and number

  15. Low-loss arrayed waveguide grating at 760 nm.

    PubMed

    Stanton, E J; Spott, A; Davenport, M L; Volet, N; Bowers, J E

    2016-04-15

    An arrayed waveguide grating (AWG) at 760 nm is demonstrated with an insertion loss smaller than 0.5 dB. Interface roughness and waveguide length errors contribute much more to scattering loss and phase errors at 760 nm than at longer wavelengths, thus requiring improved design and fabrication. This Letter details how this is achieved by minimizing interfacial scattering, grating side-order excitation, and phase errors in the AWG. With silicon nitride core and silicon dioxide clad waveguides on silicon, this AWG is compatible with heterogeneously integrated lasers for on-chip spectral beam combining.

  16. Cost-effective tunable 1310nm DWDM transmitter

    NASA Astrophysics Data System (ADS)

    Chorchos, Łukasz; Turkiewicz, Jarosław P.

    2015-09-01

    The growing demand for higher data rate transmissions in local and metropolitan area networks is main reason of developing effective and inexpensive transmission systems. In this paper, study about the possibility to realize 1310 nm tunable DWDM transmitter using commercially available low-cost DFB lasers is presented. Extensive DFB lasers characterization has been performed which led to establish relationships between laser current, operational temperature, emitted wavelength and power. An algorithm to find the laser settings for a desired wavelength grid has been proposed and tested. Generation of the 1310nm DWDM channels with frequency spacing between 120 and 240GHz has been demonstrated.

  17. Spatial coherence of low-cost 532nm green lasers

    NASA Astrophysics Data System (ADS)

    Astadjov, Dimo N.; Prakash, Om

    2013-03-01

    We report for first time, to our best knowledge, experimental measurement of the degree of spatial coherence of a λ532 nm laser source (of a DPSS type - frequency doubled Nd:YVO4 laser) by reversal shear interferometers developed in our laboratories not so long. The degree of a full-sized non-apertured laser beam turned out to be quite high viz. up to 0.6 which is comparable with the degree of spatial coherence of λ510 nm copper lasers we had measured repeatedly for last decade.

  18. Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique

    NASA Astrophysics Data System (ADS)

    Biswas, Abani M.; Li, Jianliang; Hiserote, Jay A.; Melvin, Lawrence S., III

    2006-10-01

    Immersion lithography and multiple exposure techniques are the most promising methods to extend lithography manufacturing to the 45nm node. Although immersion lithography has attracted much attention recently as a promising optical lithography extension, it will not solve all the problems at the 45-nm node. The 'dry' option, (i.e. double exposure/etch) which can be realized with standard processing practice, will extend 193-nm lithography to the end of the current industry roadmap. Double exposure/etch lithography is expensive in terms of cost, throughput time, and overlay registration accuracy. However, it is less challenging compared to other possible alternatives and has the ability to break through the κ I barrier (0.25). This process, in combination with attenuated PSM (att-PSM) mask, is a good imaging solution that can reach, and most likely go beyond, the 45-nm node. Mask making requirements in a double exposure scheme will be reduced significantly. This can be appreciated by the fact that the separation of tightly-pitched mask into two less demanding pitch patterns will reduce the stringent specifications for each mask. In this study, modeling of double exposure lithography (DEL) with att-PSM masks to target 45-nm node is described. In addition, mask separation and implementation issues of optical proximity corrections (OPC) to improve process window are studied. To understand the impact of OPC on the process window, Fourier analysis of the masks has been carried out as well.

  19. Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

    NASA Astrophysics Data System (ADS)

    de Klerk, Jos; Jorritsma, Louis; van Setten, Eelco; Droste, Richard; du Croo de Jongh, Richard; Hansen, Steven G.; Smith, Dan; van de Kerkhof, Mark A.; van de Mast, Frank; Graeupner, Paul; Rohe, Thomas; Kornitzer, Klaus

    2003-06-01

    As the semiconductor industry looks into the near future to extend manufacturing beyond 100nm, a new optical lithography system was developed by ASML. To achieve the aggressive industry roadmap and enable high volume manufacturing of sub 100nm resolutions at low k1 requires a number of challenges to be overcome. This paper reviews the design, system performance and measurements of a High NA, Dual stage 193nm TWINSCAN system planned for high volume manufacturing for 80nm applications. The overall system capability to effectively measure and control to a high precision the various attributes upon process control necessary for adequate CD control, in the low k1 regime will be shown. This paper will discuss the needed imaging control and the requirement for an extremely stable and matured platform. The system's dynamic, focus, leveling and dose delivery performance will be shown. Additionally, the automated control features of the optical system will be shown that enable the use of the various resolution enhancement techniques (RET) currently under development. The ability to optimize imaging performance with the control and flexibility in the pupil formation optics will be discussed. Finally, experimental results of an in-situ measurement technique with automated feedback control to optimize projection lens aberrations, which has a direct impact to imaging fidelity, will be shown. In summary, the lithographic system functionality and performance needed to achieve 80nm volume manufacturing will be presented.

  20. First results from simultaneous 527 nm and 351 nm probe beam interactions in a long scalelength plasma

    NASA Astrophysics Data System (ADS)

    Moody, J. D.; MacKinnon, A.; Glenzer, S. H.; Froula, D.; Gregori, G.; Berger, R. L.; Campbell, K.; Divol, L.; Dixit, S.; Suter, L. J.; Williams, E. A.; Bahr, R.; Seka, W.

    2002-11-01

    We investigate the stimulated Raman and Brillouin backscattered light from simultaneous 527 nm and 351 nm probe beams incident on a long scalelength ignition-like plasma. These experiments are important for both determining backscattering physics mechanisms and for evaluating laser power loss expected in planned ignition experiments. The plasma is formed using 18 kJ of 351 nm light from the Omega laser in a 1 ns pulse incident on a gas-filled balloon target. The two probe beams, which are delayed 0.5 ns relative to the plasma forming beams, are separated by 42^rc, have vacuum intensity of <= 7 × 10^14 W/cm^2 and may or may not intersect in the plasma. Self-Thomson scattered light from the 527 nm beam is used to determine the plasma temperatures. We find that in a CH plasma, beam intersection leads to about a factor of 2 increase in the SRS from the 351 nm beam compared to no intersection. Beam intersection does not change the SBS backscattering level studied with a CO2 plasma. We describe the experimental results and simulations using the LASNEX hydrodynamic code and the pF3D laser-plasma wave propagation code. Work performed under the auspicies of the U.S. Department of Energy by the Lawrence Livermore National Laboratory under contract number W--7405--ENG--48.

  1. Damage fluence at 1054 nm and 351 nm of coatings made with hafnium oxide evaporated from metallic hafnium

    SciTech Connect

    Smith, D.J.; Anzellotti, J.F.; Schmid, A.W.

    1995-12-31

    Hafnium oxide can be reactively deposited by e-beam evaporation directly from a metallic hafnium melt. Films produced in this manner can have low absorptive losses, low defect densities, and high damage thresholds. Evaporation of hafnia, in this form allows for more precise control of rate and variation of the vapor plume. Thus, multilayer films of metal-converted hafnia and conventionally deposited silicon dioxide can be used for designs that require precise control of optical thickness and a high degree of uniformity. One such design, a polarizing beam splitter used for the OMEGA Upgrade, was produced using the hafnia/silica combination. These coatings have stringent optical requirements, are placed in the stages of the laser with the highest fluence at 1054 nm, and are required to have a low net stress to produce low wavefront distortion. Hafnia/silica coatings are also more stable than other film combinations such as tantala/silica. Hafnia/silica films were investigated for other applications. A triple wavelength (351, 527, and 1054 nm) antireflection coating was developed for calorimeter absorption glass. The metal-converted hafnia is also used on selected transport mirrors used at 351 nm and angles of incidence up to 45{degrees}. Damage test results for 1054 nm, 1 ns, and 351 nm, 0.7 ns will be presented.

  2. Three-body dissociations: The photodissociation of dimethyl sulfoxide at 193 nm

    SciTech Connect

    Blank, D.A.; North, S.W.; Stranges, D.

    1997-04-01

    When a molecule with two equivalent chemical bonds is excited above the threshold for dissociation of both bonds, how the rupture of the two bonds is temporally coupled becomes a salient question. Following absorption at 193 nm dimethyl sulfoxide (CH{sub 3}SOCH{sub 3}) contains enough energy to rupture both C-S bonds. This can happen in a stepwise (reaction 1) or concerted (reaction 2) fashion where the authors use rotation of the SOCH{sub 3} intermediate prior to dissociation to define a stepwise dissociation: (1) CH{sub 3}SOCH{sub 3} {r_arrow} 2CH{sub 3} + SO; (2a) CH{sub 3}SOCH{sub 3} {r_arrow} CH{sub 3} + SOCH{sub 3}; and (2b) SOCH{sub 3} {r_arrow} SO + CH{sub 3}. Recently, the dissociation of dimethyl sulfoxide following absorption at 193 nm was suggested to involve simultaneous cleavage of both C-S bonds on an excited electronic surface. This conclusion was inferred from laser induced fluorescence (LIF) and resonant multiphoton ionization (2+1 REMPI) measurements of the internal energy content in the CH{sub 3} and SO photoproducts and a near unity quantum yield measured for SO. Since this type of concerted three body dissociation is very interesting and a rather rare event in photodissociation dynamics, the authors chose to investigate this system using the technique of photofragment translational spectroscopy at beamline 9.0.2.1. The soft photoionization provided by the VUV undulator radiation allowed the authors to probe the SOCH{sub 3} intermediate which had not been previously observed and provided good evidence that the dissociation of dimethyl sulfoxide primarily proceeds via a two step dissociation, reaction 2.

  3. Isolation of Enterococcus faecium NM113, Enterococcus faecium NM213 and Lactobacillus casei NM512 as novel probiotics with immunomodulatory properties.

    PubMed

    Mansour, Nahla M; Heine, Holger; Abdou, Sania M; Shenana, Mohamed E; Zakaria, Mohamed K; El-Diwany, Ahmed

    2014-10-01

    Probiotics, defined as living bacteria that are beneficial for human health, mainly function through their immunomodulatory abilities. Hence, these microorganisms have proven successful for treating diseases resulting from immune deregulation. The aim of this study was to find novel candidates to improve on and complement current probiotic treatment strategies. Of 60 lactic acid bacterial strains that were isolated from fecal samples of healthy, full-term, breast-fed infants, three were chosen because of their ability to activate human immune cells. These candidates were then tested with regard to immunomodulatory properties, antimicrobial effects on pathogens, required pharmacological properties and their safety profiles. To identify the immunomodulatory structures of the selected isolates, activation of specific innate immune receptors was studied. The three candidates for probiotic treatment were assigned Enterococcus faecium NM113, Enterococcus faecium NM213 and Lactobacillus casei NM512. Compared with the established allergy-protective strain Lactococcus lactis G121, these isolates induced release of similar amounts of IL-12, a potent inducer of T helper 1 cells. In addition, all three neonatal isolates had antimicrobial activity against pathogens. Analysis of pharmacological suitability showed high tolerance of low pH, bile salts and pancreatic enzymes. In terms of safe application in humans, the isolates were sensitive to three antibiotics (chloramphenicol, tetracycline and erythromycin). In addition, the Enterococcus isolates were free from the four major virulence genes (cylA, agg, efaAfs and ccf). Moreover, the isolates strongly activated Toll-like receptor 2, which suggests lipopeptides as their active immunomodulatory structure. Thus, three novel bacterial strains with great potential as probiotic candidates and promising immunomodulatory properties have here been identified and characterized. © 2014 The Societies and Wiley Publishing Asia Pty Ltd.

  4. 785nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm

    NASA Astrophysics Data System (ADS)

    Sumpf, Bernd; Kabitzke, Julia; Fricke, Jörg; Ressel, Peter; Müller, André; Maiwald, Martin; Tränkle, Günther

    2017-02-01

    Shifted excitation Raman difference spectroscopy is a powerful tool to separate the weak Raman lines from disturbing background light like fluorescence, day light or artificial light. When exciting the sample alternatingly with two slightly shifted wavelengths, the Raman lines follow the change whereas the background remains unchanged. Therefore, background free Raman spectra can be obtained measuring the two Raman spectra, subtracting the two signals and applying a reconstruction algorithm. When the spectral distance between the two wavelengths is the width of the Raman lines under study best signal-to-noise ratios can be achieved. In this work, monolithic dual wavelength Y-branch DBR ridge waveguide diode lasers with resistor heaters over the DBR gratings will be presented. The devices have a total length of 3 mm and a RW stripe width of 2.2 μm. The wavelengths are defined and stabilized using 500 μm long 10th order gratings with a designed spectral distance of 0.62 nm. Using the resistor heaters, this distance can be adjusted. The monolithic devices reach optical output powers up to 180 mW. Over the full range, they operate in single mode. The emission width is smaller than 13 pm (FWHM). At an output power of 50 mW the conversion efficiency is 0.22, which only slightly decreases down to 0.18 at maximal power. At an output power of 100 mW and with heater currents smaller than 600 mA, the spectral distance can be tuned from 0 nm up to 2 nm. The spectra remain single mode.

  5. 1700 nm and 1800 nm band tunable thulium doped mode-locked fiber lasers.

    PubMed

    Emami, Siamak Dawazdah; Dashtabi, Mahdi Mozdoor; Lee, Hui Jing; Arabanian, Atoosa Sadat; Rashid, Hairul Azhar Abdul

    2017-10-06

    This paper presents short wavelength operation of tunable thulium-doped mode-locked lasers with sweep ranges of 1702 to 1764 nm and 1788 to 1831 nm. This operation is realized by a combination of the partial amplified spontaneous emission suppression method, the bidirectional pumping mechanism and the nonlinear polarization rotation (NPR) technique. Lasing at emission bands lower than the 1800 nm wavelength in thulium-doped fiber lasers is achieved using mode confinement loss in a specially designed photonic crystal fiber (PCF). The enlargement of the first outer ring air holes around the core region of the PCF attenuates emissions above the cut-off wavelength and dominates the active region. This amplified spontaneous emission (ASE) suppression using our presented PCF is applied to a mode-locked laser cavity and is demonstrated to be a simple and compact solution to widely tunable all-fiber lasers.

  6. Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer

    NASA Astrophysics Data System (ADS)

    Timoshkov, V.; Rio, D.; Liu, H.; Gillijns, W.; Wang, J.; Wong, P.; Van Den Heuvel, D.; Wiaux, V.; Nikolsky, P.; Finders, J.

    2013-10-01

    The 20nm Metal1 layer, based on ARM standard cells, has a 2D design with minimum pitch of 64nm. This 2D design requires a Litho-Etch-Litho-Etch (LELE) double patterning. The whole design is divided in 2 splits: Me1A and Me1B. But solution of splitting conflicts needs stitching at some locations, what requires good Critical Dimension (CD) and overlay control to provide reliable contact between 2 stitched line ends. ASML Immersion NXT tools are aimed at 20 and 14nm logic production nodes. Focus control requirements become tighter, as existing 20nm production logic layouts, based on ARM, have about 50-60nm focus latitude and tight CD Uniformity (CDU) specifications, especially for line ends. IMEC inspected 20nm production Metal1 ARM standard cells with a Negative Tone Development (NTD) process using the Process Window Qualification-like technique experimentally and by Brion Tachyon LMC by simulations. Stronger defects were found thru process variations. A calibrated Tachyon model proved a good overall predictability capability for this process. Selected defects are likely to be transferred to hard mask during etch. Further, CDU inspection was performed for these critical features. Hot spots showed worse CD uniformity than specifications. Intra-field CDU contribution is significant in overall CDU budget, where reticle has major impact due to high MEEF of hot spots. Tip-to-Tip and tip-to-line hot spots have high MEEF and its variation over the field. Best focus variation range was determined by best focus offsets between hot spots and its variation within the field.

  7. Size control in the synthesis of 1-6 nm gold nanoparticles using folic acid-chitosan conjugate as a stabilizer

    NASA Astrophysics Data System (ADS)

    Liu, Lili; Zhang, Xianwen; Chaudhuri, Jharna

    2014-09-01

    We report a simple and practical method for the preparation of folic acid (FA)-chitosan functionalized gold nanoparticles (AuNPs) with a very small size (1-6 nm). Sodium borohydride was used as a reducing agent. The size of the AuNPs was controlled by adjusting the mass fraction of FA-chitosan conjugate to Au. The AuNPs were characterized using UV-vis spectroscopy and transmission electron microscopy (TEM). The results indicated that the size distribution of AuNPs decreased ranging from 6 nm to 1 nm with increasing the fraction of FA-chitosan conjugate in the reaction systems.

  8. IDEAL-NM Annual Report: School Year 2013-2014

    ERIC Educational Resources Information Center

    New Mexico Public Education Department, 2015

    2015-01-01

    Innovative Digital Education and Learning-New Mexico (IDEAL-NM) was created in response to the 2005 Performance and Accountability Contract, "Making Schools Work" to leverage technology. On October 27, 2006, the statewide e-learning program that would implement a shared e-learning infrastructure using a single statewide learning…

  9. 77 FR 62481 - Radio Broadcasting Services; Crownpoint, NM

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-15

    ... COMMISSION 47 CFR Part 73 Radio Broadcasting Services; Crownpoint, NM AGENCY: Federal Communications....415 and 1.420. List of Subjects in 47 CFR Part 73 Radio, Radio broadcasting. Federal Communications... preamble, the Federal Communications Commission proposes to amend 47 CFR Part 73 as follows: PART 73--RADIO...

  10. Red (660 nm) or near-infrared (810 nm) photobiomodulation stimulates, while blue (415 nm), green (540 nm) light inhibits proliferation in human adipose-derived stem cells.

    PubMed

    Wang, Yuguang; Huang, Ying-Ying; Wang, Yong; Lyu, Peijun; Hamblin, Michael R

    2017-08-10

    We previously showed that blue (415 nm) and green (540 nm) wavelengths were more effective in stimulating osteoblast differentiation of human adipose-derived stem cells (hASC), compared to red (660 nm) and near-infrared (NIR, 810 nm). Intracellular calcium was higher after blue/green, and could be inhibited by the ion channel blocker, capsazepine. In the present study we asked what was the effect of these four wavelengths on proliferation of the hASC? When cultured in proliferation medium there was a clear difference between blue/green which inhibited proliferation and red/NIR which stimulated proliferation, all at 3 J/cm(2). Blue/green reduced cellular ATP, while red/NIR increased ATP in a biphasic manner. Blue/green produced a bigger increase in intracellular calcium and reactive oxygen species (ROS). Blue/green reduced mitochondrial membrane potential (MMP) and lowered intracellular pH, while red/NIR had the opposite effect. Transient receptor potential vanilloid 1 (TRPV1) ion channel was expressed in hADSC, and the TRPV1 ligand capsaicin (5uM) stimulated proliferation, which could be abrogated by capsazepine. The inhibition of proliferation caused by blue/green could also be abrogated by capsazepine, and by the antioxidant, N-acetylcysteine. The data suggest that blue/green light inhibits proliferation by activating TRPV1, and increasing calcium and ROS.

  11. Microstructure of 100 nm damascene copper overburden and lines

    NASA Astrophysics Data System (ADS)

    Geiss, R. H.; Read, D. T.

    2007-09-01

    A detailed understanding of the crystallography of metallic conductors in modern interconnect systems is essential if we are to understand the influence of processing parameters on performance and reliability. In particular we must be able to evaluate the grain size, crystallographic orientation and residual elastic stress for interconnect lines having widths of tens of nm. Transmission electron microscopy might be the obvious choice, but sample preparation and small sample size make this technique unattractive. On the other hand, electron backscatter diffraction, EBSD, in a scanning electron microscope provides a very attractive tool. Sample preparation can be relatively simple, especially if one investigates the structures immediately after CMP; whole wafers may be measured if desired. One limitation to EBSD is that good diffraction patterns are obtained only from free surfaces and from a limited depth, say a few hundred nm in copper. Here EBSD will be used to compare structures for the pads and 100-nm lines in two variants of a commercial copper damascene interconnect structure. EBSD data collection will be discussed as optimized for characterizing differences in the texture, which were attributed to differences in the processing. By a unique approach to EBSD mapping we found that neither the texture nor the grain size of the overburden, as represented by the contact pads, propagated into the 100 nm lines, though they did propagate into some wider lines.

  12. 78 FR 61999 - New Mexico Disaster #NM-00037

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-10

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION New Mexico Disaster NM-00037 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY... State of New Mexico (FEMA- 4148-DR), dated 09/30/2013. Incident: Severe Storms and Flooding. Incident...

  13. 77 FR 41874 - New Mexico Disaster #NM-00025

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-16

    ... ADMINISTRATION New Mexico Disaster NM-00025 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY: This is a notice of an Administrative declaration of a disaster for the State of New Mexico dated 07/09... adversely affected by the disaster: Primary Counties: Lincoln. Contiguous Counties: New Mexico: Chaves, De...

  14. 78 FR 66982 - New Mexico Disaster #NM-00035

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-07

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION New Mexico Disaster NM-00035 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY... State of New Mexico (FEMA- 4152-DR), dated 10/29/2013. Incident: Severe storms, flooding, and mudslides...

  15. 76 FR 2431 - New Mexico Disaster #NM-00016

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-13

    ... ADMINISTRATION New Mexico Disaster NM-00016 AGENCY: U.S. Small Business Administration. ACTION: Amendment 1... Only for the State of New Mexico (FEMA-1936-DR), dated 09/13/2010. Incident: Severe Storms and Flooding... Private Non-Profit organizations in the State of NEW MEXICO, dated 09/13/2010, is hereby amended to...

  16. 75 FR 57538 - New Mexico Disaster # NM-00016

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-21

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION New Mexico Disaster NM-00016 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY... State of New Mexico (FEMA- 1936-DR), dated 09/13/2010. Incident: Severe Storms and Flooding. Incident...

  17. 78 FR 73581 - New Mexico Disaster Number NM-00035

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-06

    ... ADMINISTRATION New Mexico Disaster Number NM-00035 AGENCY: U.S. Small Business Administration. ACTION: Amendment... Assistance Only for the State of New Mexico (FEMA-4152-DR), dated 10/29/2013. Incident: Severe Storms... disaster declaration for Private Non-Profit organizations in the State of New Mexico, dated 10/29/2013, is...

  18. 77 FR 47907 - New Mexico Disaster #NM-00025

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-10

    ... ADMINISTRATION New Mexico Disaster NM-00025 AGENCY: U.S. Small Business Administration. ACTION: Amendment 1. SUMMARY: This is an amendment of the Administrative declaration of a disaster for the State of NEW MEXICO...'s declaration for the State of New Mexico, dated 07/09/2012 is hereby amended to establish the...

  19. 77 FR 55523 - New Mexico Disaster #NM-00029

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-10

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION New Mexico Disaster NM-00029 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY... State of New Mexico (FEMA- 4079-DR), dated 08/24/2012. Incident: Flooding. Incident Period: 06/22/2012...

  20. 76 FR 81553 - New Mexico Disaster Number NM-00024

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-28

    ... ADMINISTRATION New Mexico Disaster Number NM-00024 AGENCY: U.S. Small Business Administration. ACTION: Amendment... Assistance Only for the State of New Mexico (FEMA-4047-DR), dated 11/23/2011. Incident: Flooding. Incident... Non-Profit organizations in the State of New Mexico, dated 11/23/2011, is hereby amended to include...

  1. 76 FR 18289 - New Mexico Disaster #NM-00020

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-01

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION New Mexico Disaster NM-00020 AGENCY: U.S. Small Business Administration. ACTION: Notice. SUMMARY... State of New Mexico (FEMA- 1962-DR), dated 03/24/2011. Incident: Severe Winter Storm and Extreme Cold...

  2. 78 FR 72141 - New Mexico Disaster Number NM-00037

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-02

    ... ADMINISTRATION New Mexico Disaster Number NM-00037 AGENCY: U.S. Small Business Administration. ACTION: Amendment... Assistance Only for the State of New Mexico (FEMA-4148-DR), dated 09/30/2013. Incident: Severe Storms and... Private Non-Profit organizations in the State of New Mexico, dated 09/30/2013, is hereby amended to...

  3. 77 FR 63409 - New Mexico Disaster Number NM-00029

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-16

    ... ADMINISTRATION New Mexico Disaster Number NM-00029 AGENCY: U.S. Small Business Administration. ACTION: Amendment... Assistance Only for the State of New Mexico (FEMA-4079-DR), dated 08/24/2012. Incident: Flooding. Incident... Non-Profit organizations in the State of NEW MEXICO, dated 08/24/2012, is hereby amended to include...

  4. 78 FR 67210 - Santa Clara Pueblo Disaster #NM-00038

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-08

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION Santa Clara Pueblo Disaster NM-00038 AGENCY: U.S. Small Business Administration. ACTION: Notice...: Submit completed loan applications to: U.S. Small Business Administration, Processing and...

  5. EPA Sparks Local Business in Las Cruces, N.M.

    EPA Pesticide Factsheets

    DALLAS - (Feb. 29, 2016) The U.S. Environmental Protection Agency (EPA) is awarding a $300,000 small business contract to Vista Photonics, Inc. in Las Cruces, N.M. The company plans to develop an inexpensive, high-performance, portable air pollution

  6. Blue light (470 nm) effectively inhibits bacterial and fungal growth

    USDA-ARS?s Scientific Manuscript database

    The activity of blue light (470nm) alone on (1) bacterial viability, and (2) with a food grade photosensitizer on filamentous fungal viability, was studied. Suspensions of the bacteria Leuconostoc mesenteroides (LM), Bacillus atrophaeus (BA), and Pseudomonas aeruginosa (PA) were prepared and aliquo...

  7. The Photochemistry of Cyano and Dicyanoacetylene at 193 nm.

    DTIC Science & Technology

    1987-07-28

    Halpern, L. Petway , R. Lu, W.M. Jackson, and V.R. McCrary and W. Nottingham Prepared for submission to the Journal of Chemical Physics Department of...CYANO- AND DICYANOACETYLENE AT 193 NM By J. B. Halpern% L. Petway , R. Lu W. M. Jackson , and V. R. McCrary Department of Chemistry Howard University

  8. Endobronchial therapy with a thulium fiber laser (1940 nm).

    PubMed

    Gesierich, Wolfgang; Reichenberger, Frank; Fertl, Andreas; Haeussinger, Karl; Sroka, Ronald

    2014-06-01

    Nd:YAG laser (1064 nm) is standard in bronchology. The thulium fiber laser (1940 nm) has a nearly 1000-fold increased absorption in water, enabling precise tissue ablation with a small margin of coagulation, whereas 1064-nm laser light penetrates deeper into tissue with less controllable effects. To assess the safety, feasibility, and versatility of endobronchial thulium laser therapy in an observational cohort study. Endobronchial treatment with the thulium fiber laser was performed in a cohort study of 187 bronchoscopies on 132 consecutive patients with 135 endobronchial lesions amenable to laser resection. The thulium fiber laser produced superficial, precise, and rapid tissue ablation. Eighty-one lesions were completely vaporized; 82 lesions were treated by deep tissue destruction by inserting the fiber into tissue followed by mechanical resection. Tumor bleeding was coagulated with rapid and sustained hemostasis (n = 28). Nitinol stents were removed after resection of severe granulation tissue overgrowth (n = 10). Intact stents were maintained after ablation of in-stent tissue (n = 47). In 11 cases, bleeding occurred during laser treatment (n = 11 of 187). Power settings between 5 and 20 W were found to be safe. Endobronchial therapy with the thulium laser at 1940 nm seems to be safe, feasible, and highly versatile for treatment of airway stenosis and stent obstruction caused by tissue ingrowth. Further studies are warranted. Copyright © 2014 The American Association for Thoracic Surgery. Published by Mosby, Inc. All rights reserved.

  9. Super-selective cryogenic etching for sub-10 nm features.

    PubMed

    Liu, Zuwei; Wu, Ying; Harteneck, Bruce; Olynick, Deirdre

    2013-01-11

    Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps. Here we present a pathway to high selectivity soft mask pattern transfer using cryogenic plasma etching towards low-cost high throughput sub-10 nm nanofabrication. Cryogenic SF(6)/O(2) gas chemistry is studied for high fidelity, high selectivity inductively coupled plasma etching of silicon. Selectivity was maximized on large features (400 nm-1.5 μm) with a focus on minimizing photoresist etch rates. An overall anisotropic profile with selectivity around 140:1 with a photoresist mask for feature size 1.5 μm was realized with this clean, low damage process. At the deep nanoscale, selectivity is reduced by an order of magnitude. Despite these limits, high selectivity is achieved for anisotropic high aspect ratio 10 nm scale etching with thin polymeric masks. Gentler ion bombardment resulted in planar-dependent etching and produced faceted sub-100 nm features.

  10. A novel double patterning approach for 30nm dense holes

    NASA Astrophysics Data System (ADS)

    Hsu, Dennis Shu-Hao; Wang, Walter; Hsieh, Wei-Hsien; Huang, Chun-Yen; Wu, Wen-Bin; Shih, Chiang-Lin; Shih, Steven

    2011-04-01

    Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.

  11. Direct visualization of fluid dynamics in sub-10 nm nanochannels.

    PubMed

    Li, Huawei; Zhong, Junjie; Pang, Yuanjie; Zandavi, Seyed Hadi; Persad, Aaron Harrinarine; Xu, Yi; Mostowfi, Farshid; Sinton, David

    2017-07-13

    Optical microscopy is the most direct method to probe fluid dynamics at small scales. However, contrast between fluid phases vanishes at ∼10 nm lengthscales, limiting direct optical interrogation to larger systems. Here, we present a method for direct, high-contrast and label-free visualization of fluid dynamics in sub-10 nm channels, and apply this method to study capillary filling dynamics at this scale. The direct visualization of confined fluid dynamics in 8-nm high channels is achieved with a conventional bright-field optical microscope by inserting a layer of a high-refractive-index material, silicon nitride (Si3N4), between the substrate and the nanochannel, and the height of which is accurately controlled down to a few nanometers by a SiO2 spacer layer. The Si3N4 layer exhibits a strong Fabry-Perot resonance in reflection, providing a sharp contrast between ultrathin liquid and gas phases. In addition, the Si3N4 layer enables robust anodic bonding without nanochannel collapse. With this method, we demonstrate the validity of the classical Lucas-Washburn equation for capillary filling in the sub-10 nm regime, in contrast to the previous studies, for both polar and nonpolar liquids, and for aqueous salt solutions.

  12. Gain measurements at 5 nm in nickel-like ytterbium

    SciTech Connect

    MacGowan, B.J.; Bourgade, J.L.; Combis, P.; Keane, C.J.; Louis-Jacquet, M.; Matthews, D.L.; Naccache, D.; Stone, G.; Thiell, G.; Whelan, D.A.

    1988-03-01

    Soft x-ray gain has been demonstrated at 5.03 nm within a laser produced plasma of Ni-like ytterbium. Experiments will also be described with higher Z Ni-like ions which can produce even shorter wavelength x-ray laser transition. 3 refs.

  13. High average power, narrow band 248 nm alexandrite laser system

    SciTech Connect

    Kuper, J.W.; Chin, T.C.; Papanestor, P.A.

    1994-12-31

    A compact line-narrowed 248 nm solid state laser source operating at 15 mJ {at} 100 Hz PRF was demonstrated. Constraints due to thermal loading of components were addressed. Tradeoffs between pulse energy and repetition rate were investigated. A method for overcoming thermal dephasing in the THG material was achieved by scanning a slab shaped crystal.

  14. Coherent 455 nm beam production in a cesium vapor.

    PubMed

    Schultz, J T; Abend, S; Döring, D; Debs, J E; Altin, P A; White, J D; Robins, N P; Close, J D

    2009-08-01

    We observe coherent, cw, 455 nm blue-beam production via frequency upconversion in cesium vapor. Two IR lasers induce strong double excitation in a heated cesium vapor cell, allowing the atoms to undergo a double cascade and produce a coherent, collimated, blue beam copropagating with the two IR pump lasers.

  15. EUV optical design for 100 nm CD imaging system

    SciTech Connect

    Sweeney, D.W.; Hudyma, R.; Chapman, H.B.; Shafer, D.

    1998-04-09

    The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel those of other optical lithographies. Specifications are scaled to reflect the 100 nm critical dimension for the first generation EUVL systems. The design being fabricated for the Engineering Test Stand, an EUVL alpha tool, consists of a condenser with six channels to provide an effective partial coherence factor of 0.7. The camera contains four mirrors; three of the mirrors are aspheres and the fourth is spherical. The design of the optical package has been constrained so that the angles of incidence and the variations in the angle of incidence of all rays allow for uniform multilayer coatings. The multilayers introduce a slight shift in image position and magnification. We have shown that a system aligned with visible light is also aligned at 13.4 nm. Each mirror must be fabricated with an RMS figure error of less than 0.25 nm and better than 0.2 nm RMS roughness. Optical surfaces that exceed each of these specifications individually have been fabricated. The success of EUVL requires that these specifications be met simultaneously.

  16. 76 FR 22015 - Amendment of Class E Airspace; Raton, NM

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-20

    ... Municipal Airport/Crews Field, Raton, NM. The FAA is taking this action to enhance the safety and management... additional controlled airspace at Raton Municipal Airport/ Crews Field (76 FR 5305) Docket No. FAA-2010-1239... accommodate new RNAV standard instrument approach procedures at Raton Municipal Airport/Crews Field, Raton,...

  17. 78 FR 66982 - Santa Clara Pueblo Disaster #NM-00039

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-07

    ... From the Federal Register Online via the Government Publishing Office SMALL BUSINESS ADMINISTRATION Santa Clara Pueblo Disaster NM-00039 AGENCY: U.S. Small Business Administration. ACTION: Notice...: Submit completed loan applications to: U.S. Small Business Administration, Processing and Disbursement...

  18. Pushing EUV lithography development beyond 22-nm half pitch

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Goldstein, Michael; Hoef, Brian; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; Montogomery, Warren; Wallow, Tom

    2009-06-30

    Microfield exposure tools (METs) have and continue to play a dominant role in the development of extreme ultraviolet (EUV) resists and masks. One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET. Here we investigate the possibilities and limitations of using the 0.3-NA MET for sub-22-nm half-pitch development. We consider mask resolution limitations and present a method unique to the centrally obscured MET allowing these mask limitations to be overcome. We also explore projection optics resolution limits and describe various illumination schemes allowing resolution enhancement. At 0.3-NA, the 0.5 k1 factor resolution limit is 22.5 nm meaning that conventional illumination is of limited utility for sub-22-nm development. In general resolution enhancing illumination encompasses increased coherence. We study the effect of this increased coherence on line-edge roughness, which along with resolution is another crucial factor in sub-22-nm resist development.

  19. Benchtop monitoring of reaction progress via visual recognition with a handheld UV lamp: in situ monitoring of boronic acids in the Suzuki-Miyaura reaction.

    PubMed

    Barder, Timothy E; Buchwald, Stephen L

    2007-01-04

    [reaction: see text] Although boronic acids are widely used in metal-catalyzed reactions, it is difficult to assay their consumption. As such, we developed a reversible fluorescent sensor that is activated upon binding a boronic acid. The sensor can be used to monitor consumption of a boronic acid in Suzuki-Miyaura reactions. Importantly, only a standard handheld long-wave UV lamp (365 nm) is required and fluorescence is easily detectable with the naked eye without disturbing the reaction mixture.

  20. Combined treatment with 595-nm pulsed dye laser and 1550-nm erbium-glass fractional laser for traumatic scars.

    PubMed

    Park, Kui Young; Hyun, Moo Yeol; Moon, Nam Ju; Jeong, Se Yeong; Seo, Seong Jun; Hong, Chang Kwun

    2016-11-01

    Facial scars can be caused by a traumatic event or indeed surgical procedures. Several treatment modalities have been suggested including surgical or resurfacing techniques, autologous fat transfer, and injection of fillers. However, these approaches have varying degrees of success and associated side effects. We report two Korean patients with traumatic scars. Both patients received combined consecutive treatment with 595-nm pulsed dye laser (PDL) and 1550-nm erbium-glass fractional laser. Both patients showed remarkable clinical improvements after a course of sessions. Therefore, simultaneous combined treatment with PDL and fractional laser may be considered a reasonable therapeutic option for traumatic facial scars.

  1. Extreme magnetic anisotropy and multiple superconducting transition signatures in a [Nb(23 nm)/Ni(5 nm)] 5 multilayer

    NASA Astrophysics Data System (ADS)

    De Long, L. E.; Kryukov, S. A.; Joshi, Amish G.; Xu, Wentao; Bosomtwi, A.; Kirby, B. J.; Fitzsimmons, M. R.

    2008-04-01

    We have applied polarized neutron reflectometry, and novel SQUID and vibrating reed magnetometry to probe a [Nb(23 nm)/Ni(5 nm)]5 multilayer (ML) whose superconducting state magnetic anisotropy is dominated by confined (in-plane) supercurrents in DC magnetic fields, H, applied nearly parallel to the ML plane. The upper critical field exhibits abrupt shifts (0.1-0.6 K) in near-parallel fields, but is field-independent for μ0H < 0.8 T when the ML is exactly aligned with the DC field, indicating suppression of orbital pairbreaking and the possible presence of unconventional superconducting pairing states.

  2. Center and limb solar spectrum in high spectral resolution 225.2 nm to 319.6 nm

    NASA Technical Reports Server (NTRS)

    Kohl, J. L.; Parkinson, W. H.; Kurucz, R. L.

    1978-01-01

    The atlas has been designed to fulfill the need in solar and stellar astronomy, in aeronomy, and in space science for a convenient reference source that provides a detailed and accurate record of the measured solar ultraviolet spectrum in high spectral resolution for the wavelength range from 225.2 nm to 319.6 nm. The atlas also contains a preliminary synthetic solar spectrum with a legend for identifying and describing the features of the synthetic spectrum. Attention is given to aspects of instrumentation, the radiometric calibration, the wavelength scale, background noise random fluctuations and data filtering, intermittent noise, the observational conditions, the experimental uncertainty, the atlas format, references, tables, and plots.

  3. O(1)S 557.7nm and O(1)D 630 nm emissions in shuttle thruster plumes

    NASA Technical Reports Server (NTRS)

    Viereck, R. A.; Murad, E.; Pike, C. P.; Mende, S. B.; Swenson, G. A.; Elgin, J. B.; Bernstein, L. S.; Lucid, S.

    1995-01-01

    Radiation resulting from interaction between the effluent cloud of a space shuttle thruster and the ambient atmosphere was observed with a spectograph aboard the shutttle. The spectral measurements were made between 400 and 800 nm with a resolutoion of 3 nm. The primary emissions are identified as NO2, HNO, O(1)D, and O(1)S. These are the first observations od O(1)S emission in the shuttle plume. These data are compared with the previous measurements, and possible excitation mechanisms are discussed. The results are also compared with a Monte Carlo simulation of thruster plume-atmosphere interaction radiation.

  4. A reversible nanoconfined chemical reaction.

    PubMed

    Nielsen, Thomas K; Bösenberg, Ulrike; Gosalawit, Rapee; Dornheim, Martin; Cerenius, Yngve; Besenbacher, Flemming; Jensen, Torben R

    2010-07-27

    Hydrogen is recognized as a potential, extremely interesting energy carrier system, which can facilitate efficient utilization of unevenly distributed renewable energy. A major challenge in a future "hydrogen economy" is the development of a safe, compact, robust, and efficient means of hydrogen storage, in particular, for mobile applications. Here we report on a new concept for hydrogen storage using nanoconfined reversible chemical reactions. LiBH4 and MgH2 nanoparticles are embedded in a nanoporous carbon aerogel scaffold with pore size Dmax approximately 21 nm and react during release of hydrogen and form MgB2. The hydrogen desorption kinetics is significantly improved compared to bulk conditions, and the nanoconfined system has a high degree of reversibility and stability and possibly also improved thermodynamic properties. This new scheme of nanoconfined chemistry may have a wide range of interesting applications in the future, for example, within the merging area of chemical storage of renewable energy.

  5. Progress on high-power 808nm VCSELs and applications

    NASA Astrophysics Data System (ADS)

    Zhou, Delai; Seurin, Jean-Francois; Xu, Guoyang; Van Leeuwen, Robert; Miglo, Alexander; Wang, Qing; Kovsh, Alexey; Ghosh, Chuni

    2017-02-01

    High power 808nm semiconductor lasers are widely used for pumping neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal to produce high-brightness lasing at 1064nm. In addition, there are growing interest to use such high power 808nm lasers in the field of automotive infra-red (IR) illumination and medical aesthetic treatment. Vertical-cavity surface-emitting lasers (VCSELs) have emerged as a promising candidate and attracted increased interests for those applications, due to their combined advantages of high efficiency, low diverging circular beam, narrow emission spectrum with reduced temperature sensitivity, low-cost manufacturability, simpler coupling optics, and increased reliability, especially at high temperatures. They can emit very high power with very high power density as they can be conveniently configured into large two-dimensional arrays and modules of arrays. We report recent development on such high-power, high-efficiency 808nm VCSELs with industrial leading 55% power conversion efficiency (PCE). Top emitting VCSELs were grown by MOCVD and processed into single devices and 2D arrays using selective wet oxidation process and substrate removal technique for efficient current confinement and heat removal. Peak PCE of 51% and peak power of 800W were achieved from 5x5mm array, corresponding to peak power density of 4kW/cm2. Pumped with new generation of 2.3kW VCSEL module, Q-switched laser pulse energy at 1064nm reached 46.9mJ, more than doubled from previously reported results.

  6. Treatment of oral lichen planus using 308-nm excimer laser.

    PubMed

    Liu, Wei-Bing; Sun, Li-Wei; Yang, Hua; Wang, Yan-Fei

    2017-08-23

    Oral lichen planus (OLP) is a chronic inflammatory disease, has prolonged courses, repeated attacks and resistance to treatment. The traditional narrow spectrum UVB treatment has an established efficacy on skin lichen planus, and high safety. However, most of ultraviolet phototherapy devices have a huge volume, thereby cannot be used in the treatment of OLP. Lymphocytic infiltration is evident in the lesions of lichen planus, and the direct irradiation of 308-nm excimer laser can induce apoptosis of the T lymphocytes in skin lesions, thereby has a unique therapeutic effect on the diseases involving T lymphocytes. This study aims to investigate the efficacy of 308-nm excimer laser in the treatment of OLP. A total of six OLP patients were enrolled into this study, and further pathological diagnosis was conducted, then 308-nm excimer laser was used in the treatment. The efficacy of 308-nm excimer laser in the treatment of OLP was satisfactory. The clinical symptoms of five patients were significantly improved. In two patients, the erosion surface based on congestion and the surrounding white spots completely disappeared, and clinical recovery was achieved. Three patients achieved partial remission, that is, the erosion surface healed, congestion and white spot area shrunk by more than 1/2 of the primary skin lesions. In the remaining one patient, the erosion surface had not completely healed after treatment, and congestion and white spot area shrunk by less than 1/2 of the primary skin lesions. Only one patients had developed mild pain during the treatment, and this symptom alleviated by itself. The 308-nm excimer laser therapy can serve as a safe and effective treatment for OLP. © 2017 Wiley Periodicals, Inc.

  7. Commercial EUV mask blank readiness for 32 nm HP manufacturing

    NASA Astrophysics Data System (ADS)

    Seidel, Phil

    2007-05-01

    Successful commercialization of extreme ultraviolet lithography (EUVL) requires high quality EUV mask blanks for patterned masks that are essentially defect-free and very flat with high performance reflective multilayers. For 32 nm half-pitch (HP) integrated circuit manufacturing, such blanks require zero defects down to 25 nm diameter sizes while simultaneously meeting other specifications. At least three critical specifications that need continued improvements (total defects, defect size inspection, and substrate flatness control) are challenging to attain individually; meeting all requirements simultaneously will be especially challenging. Since early 2003, SEMATECH has been engaged with the mask blank materials and mask tool supplier community to drive the readiness of alpha, beta, and production mask blanks to support EUV lithography introduction. SEMATECH uses its commercial mask blank development roadmap together with neutral metrology evaluations of commercial suppliers' materials to monitor progress against needed production requirements. Commercial blank capability has improved significantly over the past two years; however, beta-level performance has still not been attained for all requirements. Attaining integrated blank specifications is more difficult than meeting individual specifications. Significant improvements including defectivity, flatness, coefficient of thermal expansion (CTE), reflectivity, wavelength control, and buffer/absorber stack performances are needed. Several orders of magnitude improvement is needed in defectivity levels alone coupled with increased detection sensitivity to 25 nm diameter defects. This paper will illustrate the recent rate of improvements along with an updated SEMATECH commercial roadmap, highlighting individual specification performances and total blank integrated performance levels currently better than 0.2 def/cm2 at >= 80 nm polystyrene latex (PSL), peak reflectivity >= 64.0%, substrate flatnesses <= 175 nm

  8. Kinetic analysis of the hydrolysis of methyl parathion using citrate-stabilized 10 nm gold nanoparticles.

    PubMed

    Nita, Rafaela; Trammell, Scott A; Ellis, Gregory A; Moore, Martin H; Soto, Carissa M; Leary, Dagmar H; Fontana, Jake; Talebzadeh, Somayeh F; Knight, D Andrew

    2016-02-01

    "Ligand-free" citrate-stabilized 10 nm gold nanoparticles (AuNPs) promote the hydrolysis of the thiophosphate ester methyl parathion (MeP) on the surface of gold as a function of pH and two temperature values. At 50 °C, the active surface gold atoms show catalytic turnover ∼4 times after 8 h and little turnover of gold surface atoms at 25 °C with only 40% of the total atoms being active. From Michaelis-Menten analysis, k(cat) increases between pH 8 and 9 and decreases above pH 9. A global analysis of the spectral changes confirmed the stoichiometric reaction at 25 °C and the catalytic reaction at 50 °C and mass spectrometry confirmed the identity of p-nitrophenolate (PNP) product. Additional decomposition pathways involving oxidation and hydrolysis independent of the formation of PNP were also seen at 50 °C for both catalyzed and un-catalyzed reactions. This work represents the first kinetic analysis of ligand-free AuNP catalyzed hydrolysis of a thiophosphate ester.

  9. Detonation Wave Profiles in Plastic Bonded Explosives Measured using 1550 nm Heterodyne Velocimetry

    NASA Astrophysics Data System (ADS)

    Gustavsen, Rick

    2009-06-01

    We have measured detonation wave profiles in several triaminotrinitrobenzene (TATB) and cyclotetramethylene tetranitramine (HMX or octogen) based plastic bonded explosives using 1550 nm Heterodyne Velocimetry. (Heterodyne Velocimetry is also called Photon Doppler Velocimetry or PDV.) Planar detonations were produced by impacting the explosive with projectiles launched in a gas gun. Particle velocity wave profiles were measured at the mirror/interface of the explosive and either a LiF or PMMA window. Mirrors consisted of either a thin vapor deposited aluminum layer, or a 6 micron thick aluminum foil. Focusing and collimating light collection probes were used. Time-Frequency-Analysis of the fringe data was carried out using both Wavelet and Short-Time-Fourier-Transform (STFT) methods. With clean fringe data, good profiles can be obtained with a 1 ns full width half maximum (FWHM) analysis window (STFT) or about 3 to 4 oscillations in the wavelet. Some profiles, however, have a noisy character which is correlated with intensity fluctuations in the raw fringe data. Wave profiles show a ZND reaction zone structure with a single reaction in the HMX based explosives and both fast and slow reactions in the TATB based explosives.

  10. Microscale Thermite Reactions.

    ERIC Educational Resources Information Center

    Arnaiz, Francisco J.; Aguado, Rafael; Arnaiz, Susana

    1998-01-01

    Describes the adaptation of thermite (aluminum with metal oxides) reactions from whole-class demonstrations to student-run micro-reactions. Lists detailed directions and possible variations of the experiment. (WRM)

  11. Allergic reactions (image)

    MedlinePlus

    Allergic reaction is a sensitivity to a specific substance, called an allergen, that is contacted through the skin, inhaled into the lungs, swallowed or injected. The body's reaction to an allergen can be mild, such as ...

  12. Allergic reactions (image)

    MedlinePlus

    Allergic reaction can be provoked by skin contact with poison plants, chemicals and animal scratches, as well as by ... dust, nuts and shellfish, may also cause allergic reaction. Medications such as penicillin and other antibiotics are ...

  13. Microfluidic chemical reaction circuits

    SciTech Connect

    Lee, Chung-cheng; Sui, Guodong; Elizarov, Arkadij; Kolb, Hartmuth C; Huang, Jiang; Heath, James R; Phelps, Michael E; Quake, Stephen R; Tseng, Hsian-rong; Wyatt, Paul; Daridon, Antoine

    2012-06-26

    New microfluidic devices, useful for carrying out chemical reactions, are provided. The devices are adapted for on-chip solvent exchange, chemical processes requiring multiple chemical reactions, and rapid concentration of reagents.

  14. Microscale Thermite Reactions.

    ERIC Educational Resources Information Center

    Arnaiz, Francisco J.; Aguado, Rafael; Arnaiz, Susana

    1998-01-01

    Describes the adaptation of thermite (aluminum with metal oxides) reactions from whole-class demonstrations to student-run micro-reactions. Lists detailed directions and possible variations of the experiment. (WRM)

  15. Modeling Mechanochemical Reaction Mechanisms.

    PubMed

    Adams, Heather; Miller, Brendan P; Furlong, Octavio J; Fantauzzi, Marzia; Navarra, Gabriele; Rossi, Antonella; Xu, Yufu; Kotvis, Peter V; Tysoe, Wilfred T

    2017-08-09

    The mechanochemical reaction between copper and dimethyl disulfide is studied under well-controlled conditions in ultrahigh vacuum (UHV). Reaction is initiated by fast S-S bond scission to form adsorbed methyl thiolate species, and the reaction kinetics are reproduced by two subsequent elementary mechanochemical reaction steps, namely a mechanochemical decomposition of methyl thiolate to deposit sulfur on the surface and evolve small, gas-phase hydrocarbons, and sliding-induced oxidation of the copper by sulfur that regenerates vacant reaction sites. The steady-state reaction kinetics are monitored in situ from the variation in the friction force as the reaction proceeds and modeled using the elementary-step reaction rate constants found for monolayer adsorbates. The analysis yields excellent agreement between the experiment and the kinetic model, as well as correctly predicting the total amount of subsurface sulfur in the film measured using Auger spectroscopy and the sulfur depth distribution measured by angle-resolved X-ray photoelectron spectroscopy.

  16. Relationship between nm23H1 genetic instability and clinical pathological characteristics in Chinese digestive system cancer patients.

    PubMed

    Yang, Yue-Qin; Wu, Liang; Chen, Jin-Xing; Sun, Jian-Zhong; Li, Meng; Li, Dong-Mei; Lu, Hai-Ying; Su, Zhi-Hong; Lin, Xin-Qiu; Li, Ji-Cheng

    2008-09-28

    To study the relationship between nm23H1 gene genetic instability and its clinical pathological characteristics in Chinese digestive system cancer patients. Polymerase chain reaction-single strand conformation polymorphism (PCR-SSCP) was used to analyze the microsatellite instability (MSI) and loss of heterozygosity (LOH). Immunohistochemistry was employed to detect the expression of nm23H1. The MSI was higher in TNM stage I + II than in stage III + IV of gastric, colonic and gallbladder carcinomas. The LOH was higher in TNM stage III + IV than in stage I + II of gastric, colonic and hepatocellular carcinomas. Lymphatic metastasis was also observed. The expression of nm23H1 protein was lower in TNM stage III + IV than in stage I + II of these tumors and in patients with lymphatic metastasis.The nm23H1 protein expression was higher in the LOH negative group than in the LOH positive group. MSI and LOH may independently control the biological behaviors of digestive system cancers. MSI could serve as an early biological marker of digestive system cancers. Enhanced expression of nm23H1 protein could efficiently inhibit cancer metastasis and improve its prognosis. LOH mostly appears in late digestive system cancer.

  17. Direct writing of 150 nm gratings and squares on ZnO crystal in water by using 800 nm femtosecond laser.

    PubMed

    Liu, Jukun; Jia, Tianqing; Zhou, Kan; Feng, Donghai; Zhang, Shian; Zhang, Hongxin; Jia, Xin; Sun, Zhenrong; Qiu, Jianrong

    2014-12-29

    We present a controllable fabrication of nanogratings and nanosquares on the surface of ZnO crystal in water based on femtosecond laser-induced periodic surface structures (LIPSS). The formation of nanogrooves depends on both laser fluence and writing speed. A single groove with width less than 40 nm and double grooves with distance of 150 nm have been produced by manipulating 800 nm femtosecond laser fluence. Nanogratings with period of 150 nm, 300 nm and 1000 nm, and nanosquares with dimensions of 150 × 150 nm2 were fabricated by using this direct femtosecond laser writing technique.

  18. Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process

    NASA Astrophysics Data System (ADS)

    Wang, Weihuai; Jin, Hao; Dong, Shurong; Zhong, Lei; Han, Yan

    2016-02-01

    Researches on the electrostatic discharge (ESD) performance of drain-extended NMOS (DeNMOS) under the state-of-the-art 28 nm and 40 nm bulk CMOS process are performed in this paper. Three distinguishing phases of avalanche breakdown stage, depletion region push-out stage and parasitic NPN turn on stage of the gate-grounded DeNMOS (GG-DeNMOS) fabricated under 28 nm CMOS process measured with transmission line pulsing (TLP) test are analyzed through TCAD simulations and tape-out silicon verification detailedly. Damage mechanisms and failure spots of GG-DeNMOS under both CMOS processes are thermal breakdown of drain junction. Improvements based on the basic structure adjustments can increase the GG-DeNMOS robustness from original 2.87 mA/μm to the highest 5.41 mA/μm. Under 40 nm process, parameter adjustments based on the basic structure have no significant benefits on the robustness improvements. By inserting P+ segments in the N+ implantation of drain or an entire P+ strip between the N+ implantation of drain and polysilicon gate to form the typical DeMOS-SCR (silicon-controlled rectifier) structure, the ESD robustness can be enhanced from 1.83 mA/μm to 8.79 mA/μm and 29.78 mA/μm, respectively.

  19. Cryogenic Lifetime Studies of 130 nm and 65 nm CMOS Technologies for High-Energy Physics Experiments

    SciTech Connect

    Hoff, James R.; Deptuch, G. W.; Wu, Guoying; Gui, Ping

    2015-06-04

    The Long Baseline Neutrino Facility intends to use unprecedented volumes of liquid argon to fill a time projection chamber in an underground facility. Research is under way to place the electronics inside the cryostat. For reasons of efficiency and economics, the lifetimes of these circuits must be well in excess of 20 years. The principle mechanism for lifetime degradation of MOSFET devices and circuits operating at cryogenic temperatures is hot carrier degradation. Choosing a process technology that is, as much as possible, immune to such degradation and developing design techniques to avoid exposure to such damage are the goals. This, then, requires careful investigation and a basic understanding of the mechanisms that underlie hot carrier degradation and the secondary effects they cause in circuits. In this work, commercially available 130 nm and 65 nm nMOS transistors operating at cryogenic temperatures are investigated. Our results show that both technologies achieve the lifetimes required by the experiment. Minimal design changes are necessary in the case of the 130 nm process and no changes whatsoever are necessary for the 65 nm process.

  20. Barometric coefficients for different neutron multiplicities according to ESA NM data (Israel) and data of University "Roma Tre" NM (Italy)

    NASA Astrophysics Data System (ADS)

    Dorman, L. I.; Iucci, N.; Sternlieb, A.; Villoresi, G.; Zukermann, I. G.

    2001-08-01

    On the basis of hourly data obtained by neutron monitor (NM) of Emilio Segre' Observatory (height 2025 ma bove s. l., cut-off rigidity for vertical direction 10.8 GV) and by NM of University "Roma Tre" (about sea level, cutoff rigidity 6.7 GV) we determine barometric coefficients both stations for total neutron intensity and for multiplicities m ≥ 1, m ≥ 2, m ≥ 3, m ≥ 4, m ≥ 5, m ≥ 6, m ≥ 7,a nd m ≥ 8, as well as for m=1, m=2, m=3, m=4, m=5, m=6,a nd m=7. We determine also for each hour the effective multiplicity for m ≥ 8 and estimate the barometricc oefficient for for both NM sections. We used hourly data from June 1998 up to April 2001, and we excludedp eriods when above the NM of Emilio Segre' Observatoryw as snow. We compare obtained results with expected according to the theory of meteorological effects for totaln eutron component and for neutron multiplicities.

  1. Effect of light-emitting diode (ʎ 627 nm and 945 nm ʎ) treatment on first intention healing: immunohistochemical analysis.

    PubMed

    Kerppers, Ivo Ilvan; de Lima, Carlos José; Fernandes, Adriana Barrinha; Villaverde, Antonio Balbin

    2015-01-01

    Collagen I is not only responsible for maintaining the integrity of most tissues due to its mechanical properties, but also for its active participation in the functionality of tissues because of its interaction with cells present in the extracellular matrix. The synthesis of collagen begins with tissue injury and remains until the end of the healing process. The use of non-coherent light for healing processes is still understudied. This procedure stands out as a biostimulation method for tissue repair, which increases local circulation, cell proliferation, and collagen synthesis. This study sought to quantify collagen I in the healing process after the treatment of wounds with the light-emitting diode (LED) treatment. The histologic analysis with tissue samples stained with picrosirius red showed a statistical difference between the positive controls, LED 627 and LED 945 nm groups; the group treated with LED 627 nm showed a predominance of mature collagen. The immunohistochemical analysis showed a statistically significant high concentration of collagen I in the LED 945 nm group. The irradiation of wounds with the higher wavelength (945 nm) used in the study produced the best activity of collagen I formation in experimental model.

  2. Final report on the torque key komparison CCM.T-K1.2 measurand torque: 0 N.m, 500 N.m, 1000 N.m

    NASA Astrophysics Data System (ADS)

    Röske, Dirk

    2015-01-01

    The purpose of the CIPM subsequent bilateral comparison CCM.T-K1.2 was to link another participant, namely the National Institute of Metrology (Thailand), in short NIMT, to the CCM.T-K1 torque key comparison. The measuring capabilities up to 1000 N.m of dead-weight torque standard machines with supported lever were investigated. The pilot laboratory was the same in both comparisons—it was the Physikalisch-Technische Bundesanstalt (PTB, Braunschweig, Germany). The same two very stable torque transducers with well-known properties were used as travelling standards. The measurements at the participating laboratory were carried out between November 2007 and February 2008. According to the technical protocol, torque steps of 500 N.m and 1000 N.m had to be measured both in clockwise and anticlockwise directions. Corrections had to be applied to the results reported by the participants taking into account the use of different amplifiers, the creep (due to different loading times of the machines) and the environmental conditions in the laboratories (temperature and relative humidity of the ambient air). The results of the pilot laboratory in this bilateral comparison are in very good agreement with the same results obtained in the CCM.T-K1 comparison. For each of the transducers, the two torque steps and both senses of direction of the torque vector, the key comparison reference value of the CCM.T-K1 was taken, and the results of participant NIMT were calculated with respect to these values. The agreement between the results is very good. The smallest expanded (k = 2) relative uncertainty of the machine stated by the participant is 1 × 10-4. The results of the comparison support this uncertainty statement. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by CCM, according

  3. Pattern generation requirements for mask making beyond 130 nm

    NASA Astrophysics Data System (ADS)

    Abboud, Frank E.; Gesley, Mark A.; Maldonado, Juan R.

    1998-06-01

    It is commonly accepted in the semiconductor industry that optical lithography will be the most cost-effective solution for 150 nm and 130 nm device generations. Some selected layers at the 130 nm device generation may be produced using electron-beam direct-write or x-ray during the development phase. However, for the production phase, it is expected that 193 nm optical lithography with reticle enhancement techniques such as optical proximity correction (OPC) and phase shift masks (PSM) will be the technology of choice. What about post 193 nm. The range of solutions is more diverse and a clear winner has not yet emerged. The topic, however, is becoming more visible and has taken a prominent place in technical conferences in the past year. The five leading potential alternatives to optical lithography are proximity x-ray, e-beam projection (EBP), extended UV (EUV), ion projection lithography (IPL), and e-beam direct write. The search for the right answer will most likely continue for a few years, and possibly more than one alternative will emerge as an effective solution at and below 100 nm. All of the alternatives, with the exception of e-beam direct write, have one thing in common, the mask. Except for proximity x- ray, all solutions at present envision a 4x reduction of the mask-to-wafer image plane. Instead of chrome-coated quartz, a silicon wafer substrate is used. Aside from patterning, mask fabrication varies depending on the lithography absorbing substrate, and EUV requires a reflective multilayer stack. Most key lithography requirements needed to pattern the imaging layer are common to all of the candidates, at least for the reduction methods. For x-ray lithography, the requirements are significantly more stringent but at a smaller field. This paper will consolidate the requirements of the various types of masks from a pattern generation point of view and will focus on the pattern generation tool requirements to meet those mask requirements. In addition, it

  4. Evaluation of the Diode laser (810nm, 980 nm) on color change of teeth after external bleaching.

    PubMed

    Kiomars, Nazanin; Azarpour, Pouneh; Mirzaei, Mansooreh; Hashemi Kamangar, Sedighe Sadat; Kharazifard, Mohammad Javad; Chiniforush, Nasim

    2016-12-30

    Subject and aim: The aim of this study was to evaluate the efficiency of diode laser-activated bleaching systems for color change of teeth. Materials & Methods: 40 premolars with intact enamel surfaces were selected for five external bleaching protocols (n=8). Two different wavelengths of diode laser (810 and 980 nm) with two different hydrogen peroxide concentrations (30% and 46%) were selected for laser bleaching. Group 1 received bleaching (Heydent- Germany) with a 810 nm diode laser; Group 2 received bleaching (Heydent- Germany) with a 980 nm diode laser; Group 3 received bleaching (laser white*20- Biolase) with a 810 nm diode laser; Group 4 received bleaching (laser white*20- Biolase) with a 980 nm diode laser, with an output power of 1.5 W, in continuous wave (cw) mode for each irradiation. Group 5 as control group received 40% hydrogen peroxide (Opalescence Boost, Ultradent-USA) with no light activation. The color of teeth was scored at baseline and 1 week after bleaching with spectrophotometer. Color change data on the CIEL*a*b* system were analyzed statistically by the one-way ANOVA and Tukey's HSD test. Results: All the bleaching techniques resulted in shade change. According to ΔE values, all techniques were effective to bleach the teeth (ΔE ≥ 3). Statistically significant differences were detected among bleaching protocols (p=0.06). Regarding shade change values expressed as ΔL*, Δa*, Δb*, ΔE*, laser bleached groups were no statistically different with each other (p>0.05). Conclusion: Bleaching with different wavelengths of diode laser resulted in the same results.

  5. Thermotolerance of apple tree leaves probed by chlorophyll a fluorescence and modulated 820 nm reflection during seasonal shift.

    PubMed

    Duan, Ying; Zhang, Mengxia; Gao, Jin; Li, Pengmin; Goltsev, Vasilij; Ma, Fengwang

    2015-11-01

    During the seasonal shift from June to August, air temperatures increase. To explore how apple trees improve their thermotolerance during this shift, we examined the photochemical reaction capacity of apple tree leaves by simultaneous measurement of prompt chlorophyll fluorescence, delayed chlorophyll fluorescence, and modulated 820 nm reflection at varying temperatures. It was found that the reaction centers and antennae of photosystem II (PSII) and photosystem I (PSI), the donor side of PSII, the electron transfer capacity from QA to QB, and the reoxidation capacity of plastoquinol were all sensitive to heat stress, particularly in June. As the season shifted, apple tree leaves improved in thermotolerance. Interestingly, the acclimation to seasonal shift enhanced the thermotolerance of PSII and PSI reaction centers more than that of their antennae, and the activity of PSII more than that of PSI. This may be a strategy for plant adaptation to changes in environmental temperatures. In addition, results from prompt and delayed fluorescence, as well as modulated 820 nm reflection corroborate each other. We suggest that the simultaneous measurement of the three independent signals may provide more information on thermal acclimation mechanisms of photochemical reactions in plant leaves.

  6. Measured skin damage thresholds for 1314-nm laser exposures

    NASA Astrophysics Data System (ADS)

    Montes de Oca, Cecilia I.; Cain, Clarence P.; Schuster, Kurt J.; Stockton, Kevin; Thomas, James J.; Eggleston, Thomas A.; Roach, William P.

    2003-06-01

    The use of lasers in the infrared region between 1200-1400 nm has steadily increased in various industrial and commercial applications. However, there are few studies documenting damage thresholds for the skin in this region, and current laser safety standards are based on limited data. This study has determined preliminary skin damage thresholds for the Effective Dose for 50% probability (ED50) of a Minimum Visible Lesion (MVL) with laser exposure at 1314nm and 0.35 ms pulse width. An in-vivo pigmented animal model, Yucatan mini-pig (Sus scrofa domestica), was used in this study. The type and extent of tissue damage in the porcine skin was determined through histopathologic examination, and the findings are discussed. Finally, the results of this study were compared to other literature as well as to the existing ANSI Z136.1 (2000) standard for safe use of lasers.

  7. Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

    SciTech Connect

    Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; Fisher, Brandon L.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.

    2016-05-23

    Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuum conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.

  8. Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

    DOE PAGES

    Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; ...

    2016-05-23

    Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuummore » conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.« less

  9. Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

    SciTech Connect

    Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; Fisher, Brandon L.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.

    2016-05-23

    Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuum conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.

  10. Internal defect localization in 980 nm ridge waveguide lasers

    NASA Astrophysics Data System (ADS)

    Díaz, L.; Eichler, H. J.; Weich, K.; Klehr, A.; Zeimer, U.

    2006-04-01

    High power lasers emitting at 980 nm are essential for pumping sources of erbium-doped fiber amplifiers (EDFAs). These are used in longer distance telecommunications. Stability and reliability of the modules are two key characteristics. The present paper investigates 'sudden random failures' of double quantum-well 980 nm high power ridge waveguide lasers implemented in EDFAs. For the inspection of the external and internal status of the device we used optical spectrum modulation experiments, electroluminescence measurements, scanning electron microscopy and cathodoluminescence investigations. The localization of internal defects is the main point of this work. Two different 'sudden random failures' were found: catastrophical optical mirror damage (COMD) and internal dark line defect (DLD) formation.

  11. Machining of optical microstructures with 157 nm laser radiation

    NASA Astrophysics Data System (ADS)

    Temme, Thorsten; Ostendorf, Andreas; Kulik, Christian J.

    2003-11-01

    The precision machining of glass by laser ablation has been expanded with the short wavelength of the 157 nm of the F2 excimer laser. The high absorption of this wavelength in any optical glass, especially in UV-grade fused silica, offers a new approach to generate high quality surfaces, addressing also micro-optical components. In this paper, the machining of basic diffractive and refractive optical components and the required machining and process technology is presented. Applications that are addressed are cylindrical and rotational symmetrical micro lenses and diffractive optics like phase transmission grating and diffractive optical elements (DOEs). These optical surfaces have been machined into bulk material as well as on fiber end surfaces, to achieve compact (electro) -- optical elements with high functionality and packaging density. The short wavelength of 157 nm used in the investigations require either vacuum or high purity inert gas environments. The influence of different ambient conditions is presented.

  12. Single, composite, and ceramic Nd:YAG 946-nm lasers

    NASA Astrophysics Data System (ADS)

    Lan, Rui-Jun; Yang, Guang; Zheng-Ping, Wang

    2015-06-01

    Single, composite crystal and ceramic continuous wave (CW) 946-nm Nd:YAG lasers are demonstrated, respectively. The ceramic laser behaves better than the crystal laser. With 5-mm long ceramic, a CW output power of 1.46 W is generated with an optical conversion efficiency of 13.9%, while the slope efficiency is 17.9%. The optimal ceramic length for a 946-nm laser is also calculated. Project supported by the National Natural Science Foundation of China (Grant No. 61405171), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012FQ014), and the Science and Technology Program of the Shandong Higher Education Institutions of China (Grant No. J13LJ05).

  13. Nonresonant 104 Terahertz Field Enhancement with 5-nm Slits

    PubMed Central

    Suwal, Om Krishna; Rhie, Jiyeah; Kim, Nayeon; Kim, Dai-Sik

    2017-01-01

    Transmission of Terahertz (THz) electromagnetic wave through a substrate is encumbered because of scattering, multiple reflections, absorption, and Fabry–Perot effects when the wave interacts with the substrate. We present the experimental realization of nonresonant electromagnetic field enhancement by a factor of almost 104 in substrate-free 5-nm gold nanoslits. Our nanoslits yielded greater than 90% normalized electric field transmission in the low-frequency THz region; the slit width was 5 nm, and the gap coverage ratio was 10−4 of the entire membrane, 0.42 mm2. This large field enhancement was attributed to gap plasmons generated by the THz wave, which squeezes the charge cross-section, thus enabling very highly dense oscillating charges and strong THz field transmission from the nanoslits. PMID:28368048

  14. Experimental study of 248nm excimer laser etching of alumina

    NASA Astrophysics Data System (ADS)

    Hu, Hongtao; Shao, Jingzhen; Wang, Xi; Fang, Xiaodong

    2016-10-01

    The 248 nm excimer laser etching characteristic of alumina ceramic and sapphire had been studied using different laser fluence and different number of pulses. And the interaction mechanism of 248 nm excimer laser with alumina ceramic and sapphire had been analyzed. The results showed that when the laser fluence was less than 8 J/cm2, the etching depth of alumina ceramic and sapphire were increased with the increase of laser fluence and number of pulses. At the high number pulses and high-energy, the surface of the sapphire had no obvious melting phenomenon, and the alumina ceramic appeared obvious melting phenomenon. The interaction mechanism of excimer laser with alumina ceramics and sapphire was mainly two-photon absorption. But because of the existence of impurities and defects, the coupling between the laser radiation and ceramic and sapphire was strong, and the thermal evaporation mechanism was also obvious.

  15. A 20 nm spin Hall nano-oscillator.

    PubMed

    Dürrenfeld, Philipp; Awad, Ahmad A; Houshang, Afshin; Dumas, Randy K; Åkerman, Johan

    2017-01-19

    Spin Hall nano-oscillators (SHNOs) are an emerging class of pure spin current driven microwave signal generators. Through the fabrication of 20 nm nano-constrictions in Pt/NiFe bilayers, we demonstrate that SHNOs can be scaled down to truly nanoscopic dimensions, with the added benefit of ultra-low operating currents and improved power conversion efficiency. The lateral confinement leads to a strong shape anisotropy field as well as an additional demagnetizing field whose reduction with increasing auto-oscillation amplitude can yield a positive current tunability contrary to the negative tunability commonly observed for localized excitations in extended magnetic layers. Micromagnetic simulations corroborate the experimental findings and suggest that the active magnetodynamic area resides up to 100 nm outside of the nano-constriction.

  16. Performance of Thin Borosilicate Glass Sheets at 351-nm

    SciTech Connect

    Whitman, P K; Hahn, D; Soules, T; Norton, M; Dixit, S; Donohue, G; Folta, J; Hollingsworth, W; Mainschein-Cline, M

    2004-11-11

    Previously, we reported preliminary results for commercial thin borosilicate glass sheets evaluated for use as a frequently-replaced optic to separate the radiation and contamination produced by the inertial confinement fusion experiments in the National Ignition Facility target chamber from the expensive precision laser optics which focus and shape the 351-nm laser beam. The goal is identification of low cost substrates that can deliver acceptable beam energy and focal spots to the target. The two parameters that dominate the transmitted beam quality are the transmitted wave front error and 351-nm absorption. Commercial materials and fabrication processes have now been identified which meet the beam energy and focus requirements for all of the missions planned for the National Ignition Facility. We present the first data for use of such an optic on the National Ignition Facility laser.

  17. A deep-UV optical frequency comb at 205 nm.

    PubMed

    Peters, E; Diddams, S A; Fendel, P; Reinhardt, S; Hänsch, T W; Udem, Th

    2009-05-25

    By frequency quadrupling a picosecond pulse train from a Ti:sapphire laser at 820 nm we generate a frequency comb at 205 nm with nearly bandwidth-limited pulses. The nonlinear frequency conversion is accomplished by two successive frequency doubling stages that take place in resonant cavities that are matched to the pulse repetition rate of 82 MHz. This allows for an overall efficiency of 4.5 % and produces an output power of up to 70 mW for a few minutes and 25 mW with continuous operation for hours. Such a deep UV frequency comb may be employed for direct frequency comb spectroscopy in cases where it is less efficient to convert to these short wavelengths with continuous wave lasers.

  18. Preparation of sub-100-nm beta-lactoglobulin (BLG) nanoparticles.

    PubMed

    Ko, Sanghoon; Gunasekaran, Sundaram

    2006-12-01

    Sub-100-nm nanoparticles were prepared from beta-lactoglobulin (BLG) with a narrow size distribution by a desolvation method using glutaraldehyde for cross-linking. With pre-heating of the BLG solution to 60 degrees C and subsequent pH readjustment to 9.0, nanoparticles of 59 +/- 5 nm were obtained with improved uniformity. Bovine serum albumin (BSA) nanoparticles, prepared under similar conditions for comparison, were larger and less uniform. The half-width of 80% particle distribution was used to compare the uniformity of particle size distribution. The stability of the nanoparticles was investigated by degradation tests at neutral and acidic pHs with and without proteolytic enzymes, trypsin and pepsin. The degradation time, determined by a graphical approach, was used to compare the relative stabilities of BLG and BSA nanoparticles. The particles of BLG were more stable than those of BSA in acidic and neutral media with and without added enzymes.

  19. Hypersensitivity reaction to azathioprine.

    PubMed

    Fields, C L; Robinson, J W; Roy, T M; Ossorio, M A; Byrd, R P

    1998-05-01

    Adverse drug reactions can vary from a simple rash to anaphylactic shock. While certain medications including the penicillins are well known to cause such reactions, other drugs are not as commonly recognized. Azathioprine hypersensitivity reactions tend to be benign and self-limiting with cessation of drug ingestion. We report a patient who had a hypersensitivity reaction to azathioprine, which manifested as distributive shock that mimicked sepsis. We also reviewed the English language literature for risk factors for a hypersensitivity reaction to azathioprine and its possible mechanism.

  20. Hard x-ray Zernike microscopy reaches 30 nm resolution.

    SciTech Connect

    Chen, Y.; Chen, T.; Yi, J.; Chu, Y.; Lee, W.-K.; Wang, C.; Kempson, I.; Hwu, Y.; Gajdosik, V.; Margaritondo, G.

    2011-03-30

    Since its invention in 1930, Zernike phase contrast has been a pillar in optical microscopy and more recently in x-ray microscopy, in particular for low-absorption-contrast biological specimens. We experimentally demonstrate that hard-x-ray Zernike microscopy now reaches a lateral resolution below 30?nm while strongly enhancing the contrast, thus opening many new research opportunities in biomedicine and materials science.

  1. Hard x-ray Zernike Microscopy Reaches 30 nm Resolution

    SciTech Connect

    Chen, Y.T.; Chu, Y.; Chen, T-Y.; Yi, J.; Lee, W-K.; Wang, C-L.; Kempson, I. M.; Hwu, Y.; Gajdosik, V.; Margaritondo, G.

    2011-03-30

    Since its invention in 1930, Zernike phase contrast has been a pillar in optical microscopy and more recently in x-ray microscopy, in particular for low-absorption-contrast biological specimens. We experimentally demonstrate that hard-x-ray Zernike microscopy now reaches a lateral resolution below 30 nm while strongly enhancing the contrast, thus opening many new research opportunities in biomedicine and materials science.

  2. The polarization properties of Fe II 614.9 nm

    NASA Technical Reports Server (NTRS)

    Lites, Bruce W.

    1993-01-01

    The anomalous Zeeman splitting of the Fe II line at 614.9 nm results in four unusual properties of the polarization signature of this line in the presence of magnetic fields: the absence of linear polarization, no magnetooptical effect, the independence of intensity at line center from the inclination of the field, and a depolarizing self-absorption. The origin of these properties is illustrated in terms of the transfer of line radiation in an idealized solar atmosphere.

  3. The polarization properties of Fe II 614.9 nm

    NASA Technical Reports Server (NTRS)

    Lites, Bruce W.

    1993-01-01

    The anomalous Zeeman splitting of the Fe II line at 614.9 nm results in four unusual properties of the polarization signature of this line in the presence of magnetic fields: the absence of linear polarization, no magnetooptical effect, the independence of intensity at line center from the inclination of the field, and a depolarizing self-absorption. The origin of these properties is illustrated in terms of the transfer of line radiation in an idealized solar atmosphere.

  4. Long pulse KrCl excimer laser at 222 nm

    NASA Astrophysics Data System (ADS)

    Hueber, J.-M.; Fontaine, B. L.; Bernard, N.; Forestier, B. M.; Sentis, M. L.; Delaporte, Ph. C.

    1992-11-01

    A long pulse (up to 185 ns FWHM) KrCl laser at lambda = 222 nm has been achieved by combining X-ray preionization and double discharge (spiker/sustainer) with fast ferrite magnetic switch. A relatively low pumping power (0.5 to 1 MW/cu cm) and 25 cm gain length allows a maximum extracted energy of 115 mJ in 135 ns FWHM, with an overall energy efficiency of 0.75 percent.

  5. MoSi absorber photomask for 32nm node

    NASA Astrophysics Data System (ADS)

    Konishi, Toshio; Kojima, Yosuke; Takahashi, Hiroyuki; Tanabe, Masato; Haraguchi, Takashi; Lamantia, Matthew; Fukushima, Yuichi; Okuda, Yoshimitsu

    2008-05-01

    The development of semiconductor process for 32nm node is in progress. Immersion lithography has been introduced as an extension of 193nm lithograpy. In addition, DPL (Double patterning lithography) is becoming a strong candidate of next generation lithography. The extension of optical lithography increases more mask complexity and tighter specification of photomasks. CD performance is the most important issue in the advanced photomask technology. However, it is expected that conventional mask cannot satisfy the required mask specifications for 32nm node and beyond. Most of CD errors are contributed to the dry etching process. Mask CD variation is greatly influenced by the loading effect from dry etching of the absorber. As the required accuracy of the mask arises, Cr absorber thickness has been gradually thinner. CD linearity with the thinner Cr absorber thickness has better performance. However, it is difficult to apply thinner Cr absorber thickness simply under the condition of OD > 3, which is needed for wafer printing. So, we adopted MoSi absorber instead of conventional Cr absorber, because MoSi absorber has less micro and global loading effect than that of Cr absorber. By using MoSi absorber, we can reduce Cr thickness as a hardmask. The thinner Cr hardmask allows for reduce resist thickness and become same condition for conventional EB resist lithography. The lithography performances were confirmed by the simulation and wafer printing. The new MoSi absorber mask behaves similar to the conventional Cr absorber mask. The adoption of super thin Cr as a hardmask made it possible to reduce resist thickness. By the application of the thin resist and the latest tools, we'll improve the mask performance to meet the 32 nm generation specification.

  6. A tunable, single frequency, fiber ring at 1053 nm

    SciTech Connect

    Wilcox, R.B.

    1997-02-21

    This laser is a tunable source designed for applications where a shorter pulse will be chopped from a long Q-switched pulse by electrooptic modulators, then amplified in Nd:phosphate glass. The laser employs ytterbium-doped silica fiber as the gain medium, pumped by a laser diode at 980nm. Gain in Yb:silica is distributed over an 90nm range, making it suitable for operation at many wavelengths. Our previous experiments with this medium demonstrated oscillation over a 50nm wide band. In addition, pumping at 980nm allows the use of stable pump diodes used in erbium-doped fiber amplifiers (EDFA`s). We designed the laser to take advantage of this wideband gain medium, and yet operate on a single cavity mode. A circulator causes unidirectional operation, and allows use of a fiber grating in reflection. This grating has a 0.2 Angstrom bandwidth, and defines the coarse tuning of the laser. It is piezoelectrically stretch tuned to the desired wavelength band. A single mode of the cavity is selected by a piezoelectrically tuned fiber grating Fabry-Perot etalon with 64MHz bandwidth. The laser is Q-switched by a bulk acousto-optic device at lkhz reprate. The loss is controlled to allow the oscillator to lase close to threshold for 500{micro}s before the Q-switch is turned off completely, creating a pulse. This ``pre-lasing`` stabilizes the single mode, since Q-switch pulse builds up from the prelase level. To prevent mode hopping during long term operation, cavity length is feedback controlled. Another piezoelectric device stretches a fiber in the cavity according to an error signal derived from the output optical signal. Due to the long, high loss cavity, the Q-switched pulse is about 3OOns long. The central part of this pulse will be gated by an electrooptic modulator to produce a 30ns square pulse, used for further amplification and modulation.

  7. Observation of cw squeezed light at 1550 nm.

    PubMed

    Mehmet, Moritz; Steinlechner, Sebastian; Eberle, Tobias; Vahlbruch, Henning; Thüring, André; Danzmann, Karsten; Schnabel, Roman

    2009-04-01

    We report on the generation of cw squeezed vacuum states of light at the telecommunication wavelength of 1550 nm. The squeezed vacuum states were produced by type I optical parametric amplification in a standing-wave cavity built around a periodically poled potassium titanyl phosphate crystal. A nonclassical noise reduction of 5.3 dB below the shot noise was observed by means of balanced homodyne detection.

  8. Quasi-cw 808-nm 300-W laser diode arrays

    NASA Astrophysics Data System (ADS)

    Bezotosnyi, V. V.; Kozyrev, A. A.; Kondakova, N. S.; Kondakov, S. A.; Krokhin, O. N.; Mikaelyan, G. T.; Oleshchenko, V. A.; Popov, Yu. M.; Cheshev, E. A.

    2017-02-01

    Samples of 808-nm quasi-cw laser diode arrays (LDAs) with an output power exceeding 300 W, a pulse duration of 200 μs, and a pulse repetition rate of 100 Hz are developed and fabricated. The main output parameters of a set of five LDAs, including light – current characteristics, current – voltage characteristics, and emission spectra are measured. Preliminary life tests show that the LDA power remains stable for 108 pulses.

  9. Electromechanical imaging of biological systems with sub-10 nm resolution

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei V.; Rodriguez, B. J.; Jesse, S.; Thundat, T.; Gruverman, A.

    2005-08-01

    Electromechanical imaging of tooth dentin and enamel has been performed with sub-10nm resolution using piezoresponse force microscopy. Characteristic piezoelectric domain size and local protein fiber ordering in dentin have been determined. The shape of a single protein fibril in enamel is visualized in real space and local hysteresis loops are measured. Because of the ubiquitous presence of piezoelectricity in biological systems, this approach is expected to find broad application in high-resolution studies of a wide range of biomaterials.

  10. Characterization of SAL605 negative resist at {lambda}=13 nm

    SciTech Connect

    La Fontaine, B.; Ciarlo, D.; Gaines, D.P.; Kania, D.R.

    1996-05-24

    We have characterized the response of the negative resist SAL605 in the extreme ultraviolet ({lambda}=13 nm). The sensitivity was found to be {approx}1 mJ/cm{sup 3} for all conditions studied. We have identified processing conditions leading to high ({gamma}{gt}4) contrast. The resist response was modeled using Prolith/2 and the development parameters were obtained from the exposure curves.

  11. Excimer lasers for superhigh NA 193-nm lithography

    NASA Astrophysics Data System (ADS)

    Paetzel, Rainer; Albrecht, Hans S.; Lokai, Peter; Zschocke, Wolfgang; Schmidt, Thomas; Bragin, Igor; Schroeder, Thomas; Reusch, Christian; Spratte, Stefan

    2003-06-01

    Excimer lasers are widely used as the light source for microlithography scanners. The volume shipment of scanner systems using 193nm is projected to begin in year 2003. Such tools will directly start with super high numerical aperture (NA) in order to take full advantage of the 193nm wavelength over the advanced 248nm systems. Reliable high repetition rate laser light sources enabling high illumination power and wafer throughput are one of the fundamental prerequisites. In addition these light sources must support a very high NA imaging lens of more than 0.8 which determines the output spectrum of the laser to be less than 0.30 pm FWHM. In this paper we report on our recent progress in the development of high repetition rate ultra-narrow band lasers for high NA 193nm microlithography scanners. The laser, NovaLine A4003, is based on a Single Oscillator Ultral Line-narrowed (SOUL) design which yields a bandwidth of less than 0.30pm FWHM. The SOUL laser enables superior optical performance without adding complexity or cost up to the 4 kHz maximum repetition rate. The A4003's high precision line-narrowing optics used in combination with the high repetition rate of 4 kHz yields an output power of 20 W at an extremely narrow spectral bandwidth of less than 0.30 pm FWHM and highest spectral purity of less than 0.75 pm for the 95% energy content. We present performance and reliability data and discuss the key laser parameters. Improvements in the laser-internal metrology and faster regulation control result in better energy stability and improved overall operation behavior. The design considerations for line narrowing and stable laser operation at high repetition rates are discussed.

  12. Sub-nm emittance lattice design for CANDLE storage ring

    NASA Astrophysics Data System (ADS)

    Sargsyan, A.; Zanyan, G.; Sahakyan, V.; Tsakanov, V.

    2016-10-01

    The most effective way to increase the brilliance of synchrotron light sources is the reduction of beam emittance. Following the recent developments in low emittance lattice design, a new sub-nm emittance lattice based on implementation of multi-band achromat concept and application of longitudinal gradient bending magnets was developed for CANDLE storage ring. The paper presents the main design considerations, linear and non-linear beam dynamics aspects of the new lattice proposed.

  13. Water line positions in the 782-840 nm region

    NASA Astrophysics Data System (ADS)

    Hu, S.-M.; Chen, B.; Tan, Y.; Wang, J.; Cheng, C.-F.; Liu, A.-W.

    2015-10-01

    A set of water transitions in the 782-840 nm region, including 38 H216O lines, 12 HD16O lines, and 30 D216O lines, were recorded with a cavity ring-down spectrometer calibrated using precise atomic lines. Absolute frequencies of the lines were determined with an accuracy of about 5 MHz. Systematic shifts were found in the line positions given in the HITRAN database and the upper energy levels given in recent MARVEL studies.

  14. Superficial hemangioma is better treated by topical 5-aminolevulinic followed by 595-nm pulsed dye laser therapy rather than 595-nm laser therapy alone.

    PubMed

    Zeng, Ming; Shen, Songke; Chen, Wei; Yang, Chunjun; Liu, ShengXiu

    2017-08-16

    The aim of this study was to compare the efficacy and adverse effects of a 595-nm pulsed dye laser therapy alone (PDL alone) with a 5-aminolevulinic (5-ALA) local application followed by a 595-nm PDL (5-ALA PDL) in the treatment of superficial hemangioma (SH). A prospectively randomized study in 181 patients with SH was carried out over a period of 24 months. One hundred and ninety-three patients were seen. One hundred and eighty-one patients with SH were enrolled, of which 165 completed final follow-up. One hundred and nineteen patients received PDL alone and 46 received 5-ALA PDL. The patients were assessed clinically and the patient's parents were given a satisfaction questionnaire. Baseline patient data (gender, lesion size, lesion site, treatment times, cure rate, and adverse reactions) were recorded and the results of the treatment of the two groups were analyzed and compared. Complete clearing of the lesion (recovery grade 4) was achieved in 44/119 (37.0%) of the PDL alone group and 31/46 (67.4%) of the 5-ALA PDL group (X (2) = 10.30, p < 0.001). Atrophic scars, hyper- and hypopigmentation occurred in both groups (X (2) = 3.32, p = 0.564). The patients' parents' satisfaction was greater in the 5-ALA PDL group. The clinical outcome of 5-ALA PDL was superior to that of PDL alone in the treatment of SH and only minor adverse events occurred in each group.

  15. 551 nm Generation by sum-frequency mixing of intracavity pumped Nd:YAG laser

    NASA Astrophysics Data System (ADS)

    Dong, Y.; Li, S. T.; Zhang, X. H.

    2012-02-01

    We present for the first time a Nd:YAG laser emitting at 1319 nm intracavity pumped by a 946 nm diode-pumped Nd:YAG laser. A 809 nm laser diode is used to pump the first Nd:YAG crystal emitting at 946 nm, and the second Nd:YAG laser emitting at 1319 nm intracavity pumped at 946 nm. Intracavity sumfrequency mixing at 946 and 1319 nm was then realized in a LBO crystal to reach the yellow range. We obtained a continuous-wave output power of 158 mW at 551 nm with a pump laser diode emitting 18.7 W at 809 nm.

  16. Photodissociation cross section of ClOOCl at 330 nm.

    PubMed

    Jin, Bing; Chen, I-Cheng; Huang, Wen-Tsung; Lien, Chien-Yu; Guchhait, Nikhil; Lin, Jim J

    2010-04-15

    The photolysis rate of ClOOCl is crucial in the catalytic destruction of polar stratospheric ozone. In this work, we determined the photodissociation cross section of ClOOCl at 330 nm with a molecular beam and with mass-resolved detection. The photodissociation cross section is the product of the absorption cross section and the dissociation quantum yield. We formed an effusive molecular beam of ClOOCl at a nozzle temperature of 200 or 250 K and determined its photodissociation probability by measuring the decrease of the ClOOCl intensity upon laser irradiation. By comparing with a reference molecule (Cl(2)), of which the absorption cross section and dissociation quantum yield are well-known, we determined the absolute photodissociation cross section of ClOOCl at 330 nm to be (2.31 +/- 0.11) x 10(-19) cm(2) at 200 K and (2.47 +/- 0.12) x 10(-19) cm(2) at 250 K. Impurity interference has been a well-recognized problem in conventional spectroscopic studies of ClOOCl; our mass-resolved measurement directly overcomes such a problem. This measurement of the ClOOCl photolysis cross section at 330 nm is particularly useful in constraining its atmospheric photolysis rate, which in the polar stratosphere peaks near this wavelength.

  17. Advances in 193 nm excimer lasers for mass spectrometry applications

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph; Esser, Hans-Gerd; Bonati, Guido

    2016-03-01

    Ongoing progress in mass analysis applications such as laser ablation inductively coupled mass spectrometry of solid samples and ultraviolet photoionization mediated sequencing of peptides and proteins is to a large extent driven by ultrashort wavelength excimer lasers at 193 nm. This paper will introduce the latest improvements achieved in the development of compact high repetition rate excimer lasers and elaborate on the impact on mass spectrometry instrumentation. Various performance and lifetime measurements obtained in a long-term endurance test over the course of 18 months will be shown and discussed in view of the laser source requirements of different mass spectrometry tasks. These sampling type applications are served by excimer lasers delivering pulsed 193 nm output of several mJ as well as fast repetition rates which are already approaching one Kilohertz. In order to open up the pathway from the laboratory to broader market industrial use, sufficient component lifetimes and long-term stable performance behavior have to be ensured. The obtained long-term results which will be presented are based on diverse 193 nm excimer laser tube improvements aiming at e.g. optimizing the gas flow dynamics and have extended the operational life the laser tube for the first time over several billion pulses even under high duty-cycle conditions.

  18. Double dipole RET investigation for 32 nm metal layers

    NASA Astrophysics Data System (ADS)

    Babcock, Carl; Zou, Yi; Dunn, Derren; Baum, Zachary; Zhao, Zengqin; Matthew, Itty; LaCour, Pat

    2008-10-01

    For 32 nm test chips, aggressive resolution enhancement technology (RET) was required for 1x metal layers to enable printing minimum pitches before availability of the final 32 nm exposure tool. Using a currently installed immersion scanner with 1.2 numerical aperture (NA) for early 32 nm test chips, one of the RET strategies capable of resolving the minimum pitch with acceptable process latitude was dipole illumination. To avoid restricting the use of minimum pitch to a single orientation, we developed a double-expose/single-develop process using horizontal and vertical dipole illumination. To enable this RET, we developed algorithms to decompose general layouts, including random logic, interconnect test patterns, and SRAM designs, into two mask layers: a first exposure (E1) of predominantly vertical features, to be patterned with horizontal dipole illumination; and, a second exposure (E2) of predominantly horizontal features, to be patterned with vertical dipole illumination. We wrote this algorithm into our OPC program, which then applies sub-resolution assist features (SRAFs) separately to the E1 and E2 masks, coordinating the two to avoid problems with overlapping exposures. This was followed by two-mask OPC, using E1 and E2 as mask layers and the original layout (single layer) as the target layer. In this paper, we describe some of the issues with decomposing layout by orientation, issues that arise in SRAF application and OPC, and some approaches we examined to address these issues.

  19. Auditory nerve impulses induced by 980 nm laser.

    PubMed

    Guan, Tian; Zhu, Kai; Chen, Fei; He, Yonghong; Wang, Jian; Wu, Mocun; Nie, Guohui

    2015-08-01

    The discovery that a pulsed laser could trigger an auditory neural response inspired ongoing research on cochlear implants activated by optical stimulus rather than by electrical current. However, most studies to date have used visible light (532 nm) or long-wavelength near-infrared (>1840  nm ) and involved making a hole in the cochlea. This paper investigates the effect of optical parameters on the optically evoked compound action potentials (oCAPs) from the guinea pig cochlea, using a pulsed semiconductor near-infrared laser (980 nm) without making a hole in the cochlea. Synchronous trigger laser pulses were used to stimulate the cochlea, before and after deafening, upon varying the pulse duration (30–1000  μs ) and an amount of radiant energy (0–53.2  mJ/cm 2 ). oCAPs were successfully recorded after deafening. The amplitude of the oCAPs increased as the infrared radiant energy was increased at a fixed 50  μs pulse duration, and decreased with a longer pulse duration at a fixed 37.1  mJ/cm 2 radiant energy. The latency of the oCAPs shortened with increasing radiant energy at a fixed pulse duration. With a higher stimulation rate, the amplitude of the oCAPs’ amplitude decreased.

  20. Characterization of 32nm node BEOL grating structures using scatterometry

    NASA Astrophysics Data System (ADS)

    Zangooie, Shahin; Sendelbach, Matthew; Angyal, Matthew; Archie, Charles; Vaid, Alok; Matthew, Itty; Herrera, Pedro

    2008-03-01

    Implementations of scatterometry in the back end of the line (BEOL) of the devices requires design of advanced measurement targets with attention to CMP ground rule constraints as well as model simplicity details. In this paper we outline basic design rules for scatterometry back end targets by stacking and staggering measurement pads to reduce metal pattern density in the horizontal plane of the device and to avoid progressive dishing problems along the vertical direction. Furthermore, important characteristics of the copper shapes in terms of their opaqueness and uniformity are discussed. It is shown that the M1 copper thicknesses larger than 100 nm are more than sufficient for accurate back end scatterometry implementations eliminating the need for modeling of contributions from the buried layers. AFM and ellipsometry line scans also show that the copper pads are sufficiently uniform with a sweet spot area of around 20 μm. Hence, accurate scatterometry can be done with negligible edge and/or dishing contributions if the measurement spot is placed any where within the sweet spot area. Reference metrology utilizing CD-SEM and CD-AFM techniques prove accuracy of the optical solutions for the develop inspect and final inspect grating structures. The total measurement uncertainty (TMU) values for the process of record line width are of the order of 0.77 nm and 0.35 nm at the develop inspect and final inspect levels, respectively.

  1. Thin hardmask patterning stacks for the 22-nm node

    NASA Astrophysics Data System (ADS)

    Zhu, Zhimin; Piscani, Emil; Wang, Yubao; Macie, Jan; Neef, Charles J.; Smith, Brian

    2009-03-01

    This paper presents robust trilayer lithography technology for cutting-edge IC fabrication and double-patterning applications. The goal is to reduce the thickness of a silicon hardmask so that the minimum thickness of the photoresist is not limited by the etch budget and can be optimized for lithography performance. Successful results of pattern etching through a 300-nm carbon layer are presented to prove that a 13.5-nm silicon hardmask is thick enough to transfer the line pattern. Another highlight of this work is the use of a simulation tool to design the stack so that UV light is concentrated at the bottom of the trenches. This design helps to clear the resist in the trenches and prevent resist top loss. An experiment was designed to validate the assumption with 45-nm dense lines at various exposure doses, using an Exitech MS-193i immersion microstepper (NA = 1.3) at the SEMATECH Resist Test Center. Results show that such a stack design obtains very wide CD processing window and is robust for 1:3 line patterning at the diffraction limit, as well as for patterning small contact holes.

  2. Photodissociation dynamics of HI and DI at 157 nm

    NASA Astrophysics Data System (ADS)

    Wang, Fengyan; Lu, I.-Chung; Yuan, Kaijun; Cheng, Yuan; Wu, Malcom; Parker, David H.; Yang, Xueming

    2007-11-01

    Photodissociation dynamics of HI and DI have been studied at 157 nm using the H atom Rydberg tagging time-of-flight technique. The photofragment translational energy distribution spectra and angular distributions of H/D atom products have been measured. Both the I( 2P 3/2) and I( 2P 1/2) products come almost exclusively from a perpendicular transition at 157 nm dissociation process, in agreement with the prediction of LeRoy's model [R.J. LeRoy, G.T. Kraemer, S. Manzhos, J. Chem. Phys. 117 (2002) 9353]. However, the branching ratios of I ∗/I measured in the experiment suggests that weak coupling may take place between the potential energy curves, which is noticeably different from the photodissociation of HI in the UV region. The experimental result in this work also suggests that the repulsive state, which has little contribution to the A-band absorption (33 000-53 000 cm -1), plays a greater role in the dissociation of HI and DI at 157 nm.

  3. The analysis of polarization characteristics on 40nm memory devices

    NASA Astrophysics Data System (ADS)

    Yoo, Minae; Park, Chanha; You, Taejun; Yang, Hyunjo; Min, Young-Hong; Park, Ki-Yeop; Yim, Donggyu; Park, Sungki

    2009-03-01

    Hyper NA system has been introduced to develop sub-60nm node memory devices. Especially memory industries including DRAM and NAND Flash business have driven much finer technology to improve productivity. Polarization at hyper NA has been well known as important optical technology to enhance imaging performance and also achieve very low k1 process. The source polarization on dense structure has been used as one of the major RET techniques. The process capabilities of various layers under specific illumination and polarization have been explored. In this study, polarization characteristic on 40nm memory device will be analyzed. Especially, TE (Transverse Electric) polarization and linear X-Y polarization on hyper NA ArF system will be compared and investigated. First, IPS (Intensity in Preferred State) value will be measured with PMM (Polarization Metrology Module) to confirm polarization characteristic of each machine before simulation. Next simulation will be done to estimate the CD variation impact of each polarization to different illumination. Third, various line and space pattern of DRAM and Flash device will be analyzed under different polarized condition to see the effect of polarization on CD of actual wafer. Finally, conclusion will be made for this experiment and future work will be discussed. In this paper, the behavior of 40nm node memory devices with two types of polarization is presented and the guidelines for polarization control is discussed based on the patterning performances.

  4. 7-nm e-beam resist sensitivity characterization

    NASA Astrophysics Data System (ADS)

    Zweber, Amy; Toda, Yusuke; Sakamoto, Yoshifumi; Faure, Thomas; Rankin, Jed; Nash, Steven; Kagawa, Masayuki; Fahrenkopf, Michael; Isogawa, Takeshi; Wistrom, Richard

    2016-10-01

    Over time mask makers have been driven to low sensitivity e-beam resist materials to meet lithographic patterning needs. For 7-nm logic node, resolution enhancement techniques continue to evolve bringing more complexity on mask and additional mask builds per layer. As demonstrated in literature, low sensitivity materials are needed for low line edge roughness (LER) but impact write tool through put. In characterizing resist sensitivity for 7-nm, we explore more broadly what advantages and disadvantages moving to lower sensitivity resist materials brings, where LER, critical dimension uniformity, resolution, fogging, image placement, and write time results and trends are presented. In this paper, resist material performance are reported for sensitivities ranging from 20 to 130 μC/cm2 at 50% proximity effect correction, where the exposure will be using a single beam platform. Materials examined include negative tone resist types with chemical amplification and positive tone without chemical amplification focusing on overall trends for 7-nm e-beam resist performance.

  5. Standardization of Broadband UV Measurements for 365 nm LED Sources

    PubMed Central

    Eppeldauer, George P.

    2012-01-01

    Broadband UV measurements are evaluated when UV-A irradiance meters measure optical radiation from 365 nm UV sources. The CIE standardized rectangular-shape UV-A function can be realized only with large spectral mismatch errors. The spectral power-distribution of the 365 nm excitation source is not standardized. Accordingly, the readings made with different types of UV meters, even if they measure the same UV source, can be very different. Available UV detectors and UV meters were measured and evaluated for spectral responsivity. The spectral product of the source-distribution and the meter’s spectral-responsivity were calculated for different combinations to estimate broad-band signal-measurement errors. Standardization of both the UV source-distribution and the meter spectral-responsivity is recommended here to perform uniform broad-band measurements with low uncertainty. It is shown what spectral responsivity function(s) is needed for new and existing UV irradiance meters to perform low-uncertainty broadband 365 nm measurements. PMID:26900516

  6. Remote-sensing vibrometry at 1550 nm wavelength

    NASA Astrophysics Data System (ADS)

    Dräbenstedt, A.; Sauer, J.; Rembe, C.

    2012-06-01

    Laser-Doppler vibrometry (LDV) is a proven technique for vibration analysis of mechanical structures. A wavelength of 633 nm is usually employed because of the availability of the relatively inexpensive Helium-Neon laser source which has a good coherence behavior. However, coherence break-down through the beat of multiple longitudinal modes and the limited detector carrier-to-noise-ratio (CNR) at a measurement laser power of 1 mW have prevented a wide use of LDV in remote sensing applications. Such applications in civil engineering are bridges, towers or wind turbines. The lower photon energy of IR light at 1550 nm wavelength increases the CNR by a factor 2.4. This helps especially in the condition where the carrier power decreases below the FM threshold. We have designed a heterodyne interferometer which allows the shot noise limited detection at 1550 nm wavelength close to the theoretical possible CNR. We present calculations of the fundamental noise contributions in interferometric light detection for a comparison of the achievable CNR between common HeNe vibrometers and IR vibrometers. The calculations are backed by measurements that show the devices working close to the theoretical limits. The achievable noise level of the demodulated velocity signal is shown in dependence from the standoff distance. Our novel heterodyne interferometer has been transferred to the Polytec product RSV-150. An application example of this new sensor will be demonstrated.

  7. 3D scanning Hall probe microscopy with 700 nm resolution

    NASA Astrophysics Data System (ADS)

    Dede, M.; Akram, R.; Oral, A.

    2016-10-01

    In this report, we present a three dimensional (3D) imaging of magnetic field vector B → (x,y,z) emanating from the magnetic material surfaces using a scanning Hall probe microscopy (3D-SHPM) down to a 700 nm spatial resolution. The Hall probe is used to measure Bz(x,y) on the specimen surface at different heights with the step size of Δz = 250 nm, as we move away from the surface in z direction, until the field decays to zero. These set of images are then used to get ∂Bz(x,y)/∂x and ∂Bz(x,y)/∂y at different z by numerical differentiation. Using the Maxwell's equations in the source free region, Bx(x,y) and By(x,y) can be calculated by integrating ∂Bz(x,y)/∂x and ∂Bz(x,y)/∂y in the z direction. Alternatively, the gradients can also be measured in the Hall gradiometer configuration directly. The operation of the 3D-SHPM is demonstrated by imaging Bx(x,y), By(x,y) and Bz(x,y) on a hard disk specimen at a 700 nm resolution, using both of these methods at 77 K. The system is capable of operating from 300 K down to 4 K range.

  8. Cultured Human Fibroblast Biostimulation Using a 940 nm Diode Laser.

    PubMed

    Illescas-Montes, Rebeca; Melguizo-Rodríguez, Lucía; Manzano-Moreno, Francisco Javier; García-Martínez, Olga; Ruiz, Concepción; Ramos-Torrecillas, Javier

    2017-07-13

    Fibroblasts are the main cells involved in regeneration during wound healing. The objective was to determine the effect of 940 nm diode laser on cultured human fibroblasts using different irradiation regimens. The CCD-1064Sk human epithelial fibroblast cell line was treated with a 940 nm diode laser at different energy doses (power: 0.2-1 W and energy density: 1-7 J/cm²) using different transmission modes (continuous or pulsed). The effect on cell growth at 24 and 72 h post-treatment was examined by measuring the proliferative capacity, the impact on the cell cycle, and the effect on cell differentiation. fibroblast proliferative capacity was increased at 24 and 72 h post-treatment as a function of the energy dose. The greatest increase was observed with a power of 0.2 or 0.5 W and energy density between 1 and 4 J/cm²; no difference was observed between continuous and pulsed modes. There were no significant differences in cell cycle between treated groups and controls. α-actin expression was increased by treatment, indicating enhanced cell differentiation. The 940 nm diode laser has biostimulating effects on fibroblasts, stimulating proliferative capacity and cell differentiation without altering the cell cycle. Further researches are necessary to explore its potential clinical usefulness in wound healing.

  9. Brain lesion induced by 1319nm laser radiation

    NASA Astrophysics Data System (ADS)

    Yang, Zaifu; Chen, Hongxia; Wang, Jiarui; Chen, Peng; Ma, Ping; Qian, Huanwen

    2010-11-01

    The laser-tissue interaction has not been well defined at the 1319 nm wavelength for brain exposure. The goal of this research effort was to identify the behavioral and histological changes of brain lesion induced by 1319 nm laser. The experiment was performed on China Kunming mice. Unilateral brain lesions were created with a continuous-wave Nd:YAG laser (1319nm). The brain lesions were identified through behavioral observation and histological haematoxylin and eosin (H&E) staining method. The behavior change was observed for a radiant exposure range of 97~773 J/cm2. The histology of the recovery process was identified for radiant exposure of 580 J/cm2. Subjects were sacrificed 1 hour, 1 week, 2 weeks, 3 months, 7 months and 13 months after laser irradiation. Results showed that after laser exposure, behavioral deficits, including kyphosis, tail entasia, or whole body paralysis could be noted right after the animals recovered from anesthesia while gradually disappeared within several days and never recurred again. Histologically, the laser lesion showed a typical architecture dependent on the interval following laser treatment. The central zone of coagulation necrosis is not apparent right after exposure but becomes obvious within several days. The nerotic tissue though may persist for a long time, will finally be completely resorbed. No carbonization granules formed under our exposure condition.

  10. Cultured Human Fibroblast Biostimulation Using a 940 nm Diode Laser

    PubMed Central

    Illescas-Montes, Rebeca; Melguizo-Rodríguez, Lucía; Manzano-Moreno, Francisco Javier; García-Martínez, Olga; Ruiz, Concepción

    2017-01-01

    Background: Fibroblasts are the main cells involved in regeneration during wound healing. The objective was to determine the effect of 940 nm diode laser on cultured human fibroblasts using different irradiation regimens. Methods: The CCD-1064Sk human epithelial fibroblast cell line was treated with a 940 nm diode laser at different energy doses (power: 0.2–1 W and energy density: 1–7 J/cm2) using different transmission modes (continuous or pulsed). The effect on cell growth at 24 and 72 h post-treatment was examined by measuring the proliferative capacity, the impact on the cell cycle, and the effect on cell differentiation. Results: fibroblast proliferative capacity was increased at 24 and 72 h post-treatment as a function of the energy dose. The greatest increase was observed with a power of 0.2 or 0.5 W and energy density between 1 and 4 J/cm2; no difference was observed between continuous and pulsed modes. There were no significant differences in cell cycle between treated groups and controls. α-actin expression was increased by treatment, indicating enhanced cell differentiation. Conclusion: The 940 nm diode laser has biostimulating effects on fibroblasts, stimulating proliferative capacity and cell differentiation without altering the cell cycle. Further researches are necessary to explore its potential clinical usefulness in wound healing. PMID:28773152

  11. Ion transport in sub-5-nm graphene nanopores

    SciTech Connect

    Suk, Myung E.; Aluru, N. R.

    2014-02-28

    Graphene nanopore is a promising device for single molecule sensing, including DNA bases, as its single atom thickness provides high spatial resolution. To attain high sensitivity, the size of the molecule should be comparable to the pore diameter. However, when the pore diameter approaches the size of the molecule, ion properties and dynamics may deviate from the bulk values and continuum analysis may not be accurate. In this paper, we investigate the static and dynamic properties of ions with and without an external voltage drop in sub-5-nm graphene nanopores using molecular dynamics simulations. Ion concentration in graphene nanopores sharply drops from the bulk concentration when the pore radius is smaller than 0.9 nm. Ion mobility in the pore is also smaller than bulk ion mobility due to the layered liquid structure in the pore-axial direction. Our results show that a continuum analysis can be appropriate when the pore radius is larger than 0.9 nm if pore conductivity is properly defined. Since many applications of graphene nanopores, such as DNA and protein sensing, involve ion transport, the results presented here will be useful not only in understanding the behavior of ion transport but also in designing bio-molecular sensors.

  12. 450 nm diode laser: A new help in oral surgery

    PubMed Central

    Fornaini, Carlo; Rocca, Jean-Paul; Merigo, Elisabetta

    2016-01-01

    AIM To describe the performance of 450 nm diode laser in oral surgery procedures. METHODS The case described consisted of the removal of a lower lip fibroma through a blue diode laser (λ = 450 nm). RESULTS The efficacy of this device, even at very low power (1W, CW), allows us to obtain very high intra and postoperative comfort for the patient, even with just topical anaesthesia and without needing suture. The healing process was completed in one week and, during the follow-up, the patient did not report any problems, pain or discomfort even without the consumption of any kind of drugs, such as painkillers and antibiotics. The histological examination performed by the pathologist showed a large area of fibrous connective tissue with some portions of epithelium-connective detachments and a regular incision with very scanty areas of carbonization. CONCLUSION The 450 nm diode laser proved of being very efficient in the oral soft tissue surgical procedures, with no side effects for the patients. PMID:27672639

  13. Development status of a 193-nm immersion exposure tool

    NASA Astrophysics Data System (ADS)

    Chibana, Takahito; Nakano, Hitoshi; Hata, Hideo; Kodachi, Nobuhiro; Sano, Naoto; Arakawa, Mikio; Matsuoka, Yoichi; Kawasaki, Youji; Mori, Sunao; Chiba, Keiko

    2006-03-01

    193-nm immersion lithography using water as the immersion fluid is the most promising technology candidate for achieving the 45nm HP node. We have been developing a high NA immersion exposure tool through collaboration with several companies in the industry. This paper presents the results we have obtained on various aspects of immersion exposure system development, and discusses the latest status on the issues that have been explored. In immersion lithography, leaching from resist raises concerns about lens contamination. Using a lens contamination test setup, we examined deposition that is formed on the lens surface when irradiated with a laser. It is estimated from the results that no contamination due to PAG will occur in the exposed area. The test results will be shown in detail. Using our immersion system, no defects have been found so far that are identified as bubble-induced. Therefore, we intentionally obtained bubble-induced defects by introducing micro bubbles into the immersion liquid. The findings will be discussed in this paper. Also, we established our "Immersion Evaluation Laboratory" to facilitate evaluation of all aspects of the immersion lithography process. The laboratory is equipped with (1) 193nm immersion scanner, FPA-6000AS4i with NA 0.85 and a 300mm wafer stage capable of 500mm/s scanning, (2) coater/developer, (3) defect inspection system and (4) SEM. We have performed full-wafer exposure tests using the AS4i, the result of which will be also presented.

  14. 50 nm DNA nanoarrays generated from uniform oligonucleotide films.

    PubMed

    Noh, Hyunwoo; Hung, Albert M; Choi, Chulmin; Lee, Ju Hun; Kim, Jin-Yeol; Jin, Sungho; Cha, Jennifer N

    2009-08-25

    One of the most challenging but potentially rewarding goals in nanoscience is the ability to direct the assembly of nanoscale materials into functional architectures with high yields, minimal steps, and inexpensive procedures. Despite their unique physical properties, the inherent difficulties of engineering wafer-level arrays of useful devices from nanoscale materials in a cost-effective manner have provided serious roadblocks toward technological impact. To address nanoscale features while still maintaining low fabrication costs, we demonstrate here an inexpensive printing method that enables repeated patterning of large-area arrays of nanoscale materials. DNA strands were patterned over 4 mm areas with 50 nm resolution by a soft-lithographic subtraction printing process, and DNA hybridization was used to direct the assembly of sub-20 nm materials to create highly ordered two-dimensional nanoparticle arrays. The entire printing and assembly process was accomplished in as few as three fabrication steps and required only a single lithographically templated silicon master that could be used repeatedly. The low-cost procedures developed to generate nanoscale DNA patterns can be easily extended toward roll-to-roll assembly of nanoscale materials with sub-50 nm resolution and fidelity.

  15. Photoelectron Emission Studies in CsBr at 257 nm

    SciTech Connect

    Maldonado, Juan R.; Liu, Zhi; Sun, Yun; Pianetta, Piero A.; Pease, Fabian W.; /Stanford U., Elect. Eng. Dept. /SLAC, SSRL

    2006-09-28

    CsBr/Cr photocathodes were found [1,2] to meet the requirements of a multi-electron beam lithography system operating with a light energy of 4.8 eV (257nm). The fact that photoemission was observed with a light energy below the reported 7.3 eV band gap for CsBr was not understood. This paper presents experimental results on the presence of intra-band gap absorption sites (IBAS) in CsBr thin film photo electron emitters, and presents a model based on IBAS to explain the observed photoelectron emission behavior at energies below band gap. A fluorescence band centered at 330 nm with a FWHM of about 0.34 eV was observed in CsBr/Cr samples under 257 nm laser illumination which can be attributed to IBAS and agrees well with previously obtained synchrotron photoelectron spectra[1] from the valence band of CsBr films.

  16. Photodissociation of vinyl cyanide at 193 nm: Nascent product distributions of the molecular elimination channels

    SciTech Connect

    Wilhelm, Michael J.; Nikow, Matthew; Letendre, Laura; Dai Hailung

    2009-01-28

    The photodissociation dynamics of vinyl cyanide (H{sub 2}CCHCN, acrylonitrile) and deuterated vinyl cyanide (D{sub 2}CCDCN) at 193 nm are examined using time-resolved Fourier transform infrared emission spectroscopy. Prior photofragment translational spectroscopy studies [D. A. Blank et al., J. Chem. Phys. 108, 5784 (1998)] of the dissociation have observed the presence of four main dissociation channels; two molecular and two radical in nature. However, with the exception of a<0.01 quantum yield determined for the CN radical loss channel, the branching ratios of the remaining three elimination channels were not measured. The time-resolved emission spectra, including those from the deuterated samples, revealed the presence of acetylene, hydrogen cyanide (HCN), as well as the energetically less stable isomer hydrogen isocyanide (HNC). Acetylene is found in two distinct energetic distributions, suggesting that both three- and four-centered elimination reactions are occurring significantly in the dissociation. In contrast to prior ab initio studies that have suggested the dominant nature of the three-center elimination of molecular hydrogen (H{sub 2}) and cyanovinylidene (:C=CHCN), we find this reaction channel to be of little importance as there is no evidence to support any significant presence of rovibrationally excited cyanoacetylene. Spectral modeling of the product distributions allows for the first experimental determination of the relative occurrence of the three-centered (resulting in HCN+vinylidene) versus four-centered (HNC+acetylene) elimination channels as 3.34 to 1.00, in contrast to the previously calculated value of 126:1. Rice-Ramsperger-Kassel-Marcus analysis depicts that the transition state energy of the four-centered reaction should be about 10 kcal mole{sup -1} lower than the three-centered reaction.

  17. Excitation of photosystem I by 760 nm femtosecond laser pulses: transient absorption spectra and intermediates

    NASA Astrophysics Data System (ADS)

    Cherepanov, Dmitry A.; Shelaev, Ivan V.; Gostev, Fedor E.; Mamedov, Mahir D.; Petrova, Anastasia A.; Aybush, Arseniy V.; Shuvalov, Vladimir A.; Semenov, Alexey Yu; Nadtochenko, Victor A.

    2017-09-01

    Excitation of photosystem I (PS I) by a femtosecond 760 nm pump leads to one- and two-photon absorption. The one-photon excitation produces intermediates with transient absorption spectra similar to the spectra of the primary [{{{P}}700}+{{{A}}0}-{{A}}1] and secondary [{{{P}}700}+{{A}}0{{{A}}1}-] ion-radical pairs in the PS I reaction center. The two-photon absorption generates the upper level excited states of chlorophyll (Chl) and carotenoid molecules in the antenna. These excited states are converted into the long-lived intermediates and can be tentatively attributed to the excited and charge-transfer ion-radical states of Chl molecules and to the excited states of carotenoids in the antenna. The transient spectra of intermediates generated by two-photon excitation differ from the transient one-photon spectra of the primary and secondary ion-radical pairs.

  18. Vortex State in Sub-100 nm Magnetic Nanodots.

    NASA Astrophysics Data System (ADS)

    Roshchin, Igor V.

    2006-03-01

    Magnetism of nanostructured magnets, which size is comparable to or smaller than ferromagnetic domain size, offers a great potential for new physics. Detailed knowledge of magnetization reversal and possible magnetic configurations in magnetic nanostructures is essential for high-density magnetic memory. Many theoretical and experimental studies are focused on a magnetic vortex which in addition to a circular in-plane configuration of spins has a core, - the region with out-of-plane magnetization. We present a quantitative study of the magnetic vortex state and the vortex core in sub-100 nm magnetic dots. Arrays of single-layer and bilayer nanodots covering over 1 cm^2 are fabricated using self-assembled nanopores in anodized alumina. This method allows good control over the dot size and periodicity. Magnetization measurements performed using SQUID, VSM, and MOKE indicate a transition from a vortex to a single domain state for the Fe dots. This transition is studied as a function of the magnetic field and dots size. Micromagnetic and Monte Carlo simulations confirm the experimental observations. Thermal activation and exchange bias strongly affect the vortex nucleation field and have a much weaker effect on the vortex annihilation field. Direct imaging of magnetic moments in sub-100 nm dots is extremely difficult and has not been reported yet. Polarized grazing incidence small angle neutron scattering measurements allow dot imaging in reciprocal space. Quantitative analysis of such measurements performed on 65 nm Fe dots yields the vortex core size of ˜15 nm, in good agreement with the 14 nm obtained from the simulations. This work is done in collaboration with Chang-Peng Li, Zhi-Pan Li, S. Roy, S. K. Sinha, (UCSD), Xavier Batlle (U. Barcelona), R. K. Dumas, Kai Liu, (UC Davis), S. Park, R. Pynn, M. R. Fitzsimmons (LANL), J. Mejia Lopez (Pontificia U. Catolica de Chile), D. Altbir, (U. de Santiago de Chile), A. H. Romero (Cinvestav-Unidad Queretaro), and Ivan K

  19. Inline detection of Chrome degradation on binary 193nm photomasks

    NASA Astrophysics Data System (ADS)

    Dufaye, Félix; Sippel, Astrid; Wylie, Mark; García-Berríos, Edgardo; Crawford, Charles; Hess, Carl; Sartelli, Luca; Pogliani, Carlo; Miyashita, Hiroyuki; Gough, Stuart; Sundermann, Frank; Brochard, Christophe

    2013-09-01

    193nm binary photomasks are still used in the semiconductor industry for the lithography of some critical layers for the nodes 90nm and 65nm, with high volumes and over long periods. However, these 193nm binary photomasks can be impacted by a phenomenon of chrome oxidation leading to critical dimensions uniformity (CDU) degradation with a pronounced radial signature. If not detected early enough, this CDU degradation may cause defectivity issues and lower yield on wafers. Fortunately, a standard cleaning and repellicle service at the mask shop has been demonstrated as efficient to remove the grown materials and get the photomask CD back on target.Some detection methods have been already described in literature, such as wafer CD intrafield monitoring (ACLV), giving reliable results but also consuming additional SEM time with less precision than direct photomask measurement. In this paper, we propose another approach, by monitoring the CDU directly on the photomask, concurrently with defect inspection for regular requalification to production for wafer fabs. For this study, we focused on a Metal layer in a 90nm technology node. Wafers have been exposed with production conditions and then measured by SEM-CD. Afterwards, this photomask has been measured with a SEM-CD in mask shop and also inspected on a KLA-Tencor X5.2 inspection system, with pixels 125 and 90nm, to evaluate the Intensity based Critical Dimension Uniformity (iCDU) option. iCDU was firstly developed to provide feed-forward CDU maps for scanner intrafield corrections, from arrayed dense structures on memory photomasks. Due to layout complexity and differing feature types, CDU monitoring on logic photomasks used to pose unique challenges.The selection of suitable feature types for CDU monitoring on logic photomasks is no longer an issue, since the transmitted intensity map gives all the needed information, as shown in this paper. In this study, the photomask was heavily degraded after more than 18,000 300

  20. Probing the electronic and catalytic properties of a bimetallic surface with 3 nm resolution

    NASA Astrophysics Data System (ADS)

    Zhong, Jin-Hui; Jin, Xi; Meng, Lingyan; Wang, Xiang; Su, Hai-Sheng; Yang, Zhi-Lin; Williams, Christopher T.; Ren, Bin

    2016-11-01

    An atomic- and molecular-level understanding of heterogeneous catalysis is required to characterize the nature of active sites and improve the rational design of catalysts. Achieving this level of characterization requires techniques that can correlate catalytic performances to specific surface structures, so as to avoid averaging effects. Tip-enhanced Raman spectroscopy combines scanning probe microscopy with plasmon-enhanced Raman scattering and provides simultaneous topographical and chemical information at the nano/atomic scale from ambient to ultrahigh-vacuum and electrochemical environments. Therefore, it has been used to monitor catalytic reactions and is proposed to correlate the local structure and function of heterogeneous catalysts. Bimetallic catalysts, such as Pd-Au, show superior performance in various catalytic reactions, but it has remained challenging to correlate structure and reactivity because of their structural complexity. Here, we show that TERS can chemically and spatially probe the site-specific chemical (electronic and catalytic) and physical (plasmonic) properties of an atomically well-defined Pd(sub-monolayer)/Au(111) bimetallic model catalyst at 3 nm resolution in real space using phenyl isocyanide as a probe molecule (Fig. 1a). We observe a weakened N≡C bond and enhanced reactivity of phenyl isocyanide adsorbed at the Pd step edge compared with that at the Pd terrace. Density functional theory corroborates these observations by revealing a higher d-band electronic profile for the low-coordinated Pd step edge atoms. The 3 nm spatial resolution we demonstrate here is the result of an enhanced electric field and distinct electronic properties at the step edges.

  1. Probing the electronic and catalytic properties of a bimetallic surface with 3 nm resolution

    NASA Astrophysics Data System (ADS)

    Zhong, Jin-Hui; Jin, Xi; Meng, Lingyan; Wang, Xiang; Su, Hai-Sheng; Yang, Zhi-Lin; Williams, Christopher T.; Ren, Bin

    2017-02-01

    An atomic- and molecular-level understanding of heterogeneous catalysis is required to characterize the nature of active sites and improve the rational design of catalysts. Achieving this level of characterization requires techniques that can correlate catalytic performances to specific surface structures, so as to avoid averaging effects. Tip-enhanced Raman spectroscopy combines scanning probe microscopy with plasmon-enhanced Raman scattering and provides simultaneous topographical and chemical information at the nano/atomic scale from ambient to ultrahigh-vacuum and electrochemical environments. Therefore, it has been used to monitor catalytic reactions and is proposed to correlate the local structure and function of heterogeneous catalysts. Bimetallic catalysts, such as Pd-Au, show superior performance in various catalytic reactions, but it has remained challenging to correlate structure and reactivity because of their structural complexity. Here, we show that TERS can chemically and spatially probe the site-specific chemical (electronic and catalytic) and physical (plasmonic) properties of an atomically well-defined Pd(sub-monolayer)/Au(111) bimetallic model catalyst at 3 nm resolution in real space using phenyl isocyanide as a probe molecule (Fig. 1a). We observe a weakened N≡C bond and enhanced reactivity of phenyl isocyanide adsorbed at the Pd step edge compared with that at the Pd terrace. Density functional theory corroborates these observations by revealing a higher d-band electronic profile for the low-coordinated Pd step edge atoms. The 3 nm spatial resolution we demonstrate here is the result of an enhanced electric field and distinct electronic properties at the step edges.

  2. RELATIVISTIC CALCULATION OF TRANSITION PROBABILITIES FOR 557.7 nm AND 297.2 nm EMISSION LINES IN OXYGEN

    SciTech Connect

    Chantler, C. T.; Nguyen, T. V. B.; Lowe, J. A.; Grant, I. P.

    2013-05-20

    The 557.7 nm green line and the 297.2 nm ultraviolet line in oxygen have been studied extensively due to their importance in astrophysics and atmospheric science. Despite the enormous effort devoted to these two prominent transition lines over 30 years, and in fact going back to 1934, the ratio of their transition probabilities remains a subject of major discrepancies amongst various theoretical calculations for many decades. Moreover, theoretical results are inconsistent with available laboratory results, as well as recent spacecraft measurements of Earth's airglow. This work presents new relativistic theoretical calculations of the transition probabilities of these two photoemission lines from neutral oxygen using the multi-configuration Dirac-Hartree-Fock method. Our calculations were performed in both length and velocity gauges in order to check for accuracy and consistency, with agreement to 8%. Whilst remaining a challenging computation, these results directly bear upon interpretations of plasma processes and ionization regimes in the universe.

  3. Sub-70 nm resolution tabletop microscopy at 13.8 nm using a compact laser-plasma EUV source.

    PubMed

    Wachulak, Przemyslaw W; Bartnik, Andrzej; Fiedorowicz, Henryk

    2010-07-15

    We report the first (to our knowledge) demonstration of a tabletop, extreme UV (EUV) transmission microscope at 13.8 nm wavelength with a spatial (half-pitch) resolution of 69 nm. In the experiment, a compact laser-plasma EUV source based on a gas puff target is applied to illuminate an object. A multilayer ellipsoidal mirror is used to focus quasi-monochromatic EUV radiation onto the object, while a Fresnel zone plate objective forms the image. The experiment and the spatial resolution measurements, based on a knife-edge test, are described. The results might be useful for the realization of a compact high-resolution tabletop imaging systems for actinic defect characterization.

  4. Novel 980-nm and 490-nm light sources using vertical-cavity lasers with extended coupled cavities

    NASA Astrophysics Data System (ADS)

    McInerney, John G.; Mooradian, Aram; Lewis, Alan; Shchegrov, Andrei V.; Strzelecka, Eva M.; Lee, Dicky; Watson, Jason P.; Liebman, Michael K.; Carey, Glen P.; Umbrasas, Arvydas; Amsden, Charles A.; Cantos, Brad D.; Hitchens, William R.; Heald, David L.; Doan, Vincent

    2003-06-01

    We have developed novel electrically pumped, surface-emitting lasers emitting at 980 nm with an extended coupled cavity. The concept is scalable from monolithic low power (~10 mW) devices all the way to high power extended cavity lasers. The latter have demonstrated ~1 W cw multi-mode and 0.5 W cw in a TEM00 mode and a single frequency, with 90% coupling efficiency into a single-mode fiber. By inserting a nonlinear optical medium in the external cavity, efficient and compact frequency doubling has been achieved with CW output powers 5-40 mW demonstrated at 490 nm. The latter devices are especially noteworthy due to their very low noise (0.05% rms from dc-2 MHz), sub 10 mrad beam pointing stability combined with small size, low power consumption (<10 W) and high efficiency.

  5. Comparison of glass processing using high-repetition femtosecond (800 nm) and UV (255 nm) nanosecond pulsed lasers

    NASA Astrophysics Data System (ADS)

    Karnakis, Dimitris M.; Knowles, Martyn R. H.; Alty, Kevin T.; Schlaf, Martin; Snelling, Howard V.

    2005-01-01

    Laser processing of glass is of significant commercial interest for microfabrication of "lab-on-a-chip" microfluidic devices. High repetition rate pulsed lasers have been investigated and provide adequate processing speeds but suffer from the inherent risk of laser-induced microcracking and other collateral damage induced in the glass. In this paper we present a comparative study between nanosecond deep UV (255nm) frequency doubled copper laser and femtosecond Ti:Sapphire (800nm) regenerative amplifier laser machining of borosilicate glass. Microchannel scribing and high aspect ratio hole drilling is demonstrated in thick glass using direct writing and mask projection techniques. The resulting material structure geometries have been examined using SEM microscopy and white light interferometry. The feasibility of glass laser machining and the significance of each laser type for this application are discussed.

  6. KEY COMPARISON: Final report on CCPR K1-a: Spectral irradiance from 250 nm to 2500 nm

    NASA Astrophysics Data System (ADS)

    Woolliams, Emma R.; Fox, Nigel P.; Cox, Maurice G.; Harris, Peter M.; Harrison, Neil J.

    2006-01-01

    The CCPR K1-a key comparison of spectral irradiance (from 250 nm to 2500 nm) was carried out to meet the requirements of the Mutual Recognition Arrangement by 13 participating national metrology institutes (NMIs). Because of the fragile nature of the tungsten halogen lamps used as comparison artefacts, the comparison was arranged as a star comparison with three lamps per participant. NPL (United Kingdom) piloted the comparison and, by measuring all lamps, provided a link between participants' measurements. The other participants were BNM-INM (France), CENAM (Mexico), CSIRO (Australia), HUT (Finland), IFA-CSIC (Spain), MSL-IRL (New Zealand), NIM (China), NIST (United States of America), NMIJ (Japan), NRC (Canada), PTB (Germany) and VNIIOFI (Russian Federation). Before the analysis was completed and the results known, the pilot discussed with each participant which lamp measurements should be included as representative of their comparison. As a consequence of this check, at least one measurement was excluded from one third of the lamps because of changes due to transportations. The comparison thus highlighted the difficulty regarding the availability of suitable transfer standards for the dissemination of spectral irradiance. The use of multiple lamps and multiple measurements ensured sufficient redundancy that all participants were adequately represented. In addition, during this pre-draft A phase all participants had the opportunity to review the uncertainty budgets and methods of all other participants. This new process helped to ensure that all submitted results and their associated uncertainties were evaluated in a consistent manner. The comparison was analysed using a model-based method which regarded each lamp as having a stable spectral irradiance and the measurements made by an NMI as systematically influenced by a factor that applies to all that NMI's measurements. The aim of the analysis was to estimate the systematic factor for each NMI. Across the

  7. Combined fractional resurfacing (10600 nm/1540 nm): Tridimensional imaging evaluation of a new device for skin rejuvenation.

    PubMed

    Mezzana, Paolo; Valeriani, Maurizio; Valeriani, Roberto

    2016-11-01

    In this study were described the results, by tridimensional imaging evaluation, of the new "Combined Fractional Resurfacing" technique with the first fractional laser that overtakes the limits of traditional ablative, nonablative fractional resurfacing by combining CO2 ablative and GaAs nonablative lasers. These two wavelengths can work separately or in a mixed modality to give the best treatment choice to all the patients. In this study, it is demonstrated that the simultaneous combination of the CO2 wavelength (10600 nm) and GaAs wavelength (1540 nm) reduced the downtime, reduced pain during the treatment, and produced better results on fine wrinkles reduction and almost the same results on pigmentation as seen with 3D analysis by Antera (Miravex).

  8. Evaluation of high quantum efficiency silicon photodiodes for calibration in the 400 nm to 900 nm spectral region

    NASA Technical Reports Server (NTRS)

    Jorquera, Carlos; Bruegge, Carol; Duval, Valerie

    1992-01-01

    The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

  9. Megahertz FDML laser with up to 143nm sweep range for ultrahigh resolution OCT at 1050nm

    NASA Astrophysics Data System (ADS)

    Kolb, Jan Philip; Klein, Thomas; Eibl, Matthias; Pfeiffer, Tom; Wieser, Wolfgang; Huber, Robert

    2016-03-01

    We present a new design of a Fourier Domain Mode Locked laser (FDML laser), which provides a new record in sweep range at ~1μm center wavelength: At the fundamental sweep rate of 2x417 kHz we reach 143nm bandwidth and 120nm with 4x buffering at 1.67MHz sweep rate. The latter configuration of our system is characterized: The FWHM of the point spread function (PSF) of a mirror is 5.6μm (in tissue). Human in vivo retinal imaging is performed with the MHz laser showing more details in vascular structures. Here we could measure an axial resolution of 6.0μm by determining the FWHM of specular reflex in the image. Additionally, challenges related to such a high sweep bandwidth such as water absorption are investigated.

  10. Effects of 405 nm Diode Laser on Titanium Oxide Bleaching Activation

    PubMed Central

    Tano, Eri; Kato, Junji; Sadr, Alireza; Ikeda, Masaomi; Tagami, Junji

    2012-01-01

    Abstract Objective: The objective of this study was to evaluate the effects of a 405 nm diode laser on bleaching reaction of H2O2 and VL-TiO2 on methylene blue (MB) dye. Background data: Visible light activating titanium dioxide photocatalyst (VL-TiO2) may improve efficacy of hydrogen peroxide (H2O2) bleaching agents used in dentistry while contributing to their safety by lowering the required concentration of peroxide. Methods: The experimental solution was prepared with H2O2, VL-TiO2, MB, and pure water. The final concentration of H2O2 was 3.5% and that of MB was 10 ppm. The experimental solution of 3 mL in a quartz cell was irradiated by a 405 nm diode laser with various powers, duty cycles, and pulse durations for 7 min. Results: In all irradiation conditions, the increase in laser irradiation time gradually decreased the MB concentration. Irradiation by higher output power showed more reduction of MB concentration. Pulse durations as short as 5 ms with duty cycle reduced to 25% did not affect the degree of the reduction in MB concentration compared with continuous wave irradiation at the same average output power. Conclusions: It was concluded that using 405 nm diode laser, the bleaching effects of VL-TiO2 depended upon the irradiation time and the average output power, regardless of pulse duration or duty cycle. PMID:23003121

  11. The efficacy in melasma treatment using a 1410 nm fractional photothermolysis laser.

    PubMed

    Wanitphakdeedecha, R; Keoprasom, N; Eimpunth, S; Manuskiatti, W

    2014-03-01

    Melasma treatment modalities including topical and procedural therapy have been employed with variable results and high recurrence rate. To quantitatively assess improvement in melasma and side effects after 1410 nm fractional photothermolysis laser treatments and to determine efficacy at 1-, 2- and 3-month follow-up after treatment. Thirty volunteers with melasma were treated with 1410 nm fractional photothermolysis for four passes on full face and additional four passes on melasma area. They were randomly treated on one side of their face with 20 mJ at 5% coverage and the other side of their face with 20 mJ at 20% coverage. All subjects were treated monthly for five times. Melanin index, Visual analogue scale and Melasma Area and Severity Index score were measured at baseline and 1-, 2- and 3-month follow-up after complete treatment protocol. There was statistically significant improvement of Melanin index at 2- and 3-month follow-up visits, but not at 1-month follow-up visit. Visual analogue scale and Melasma Area and Severity Index score improved significantly on both sides at 1-, 2- and 3-month follow-ups. The overall patients' satisfaction was significantly higher on the side treated with 20 mJ, 5% coverage. Adverse reactions included erythema, dryness and post-inflammatory hyperpigmentation on melasma area. Those side effects were significantly more intense on the side treated with 20 mJ, 20% coverage. 1410 nm fractional photothermolysis laser treatment is a safe and temporary effective procedure for melasma; however, long-term follow-up is still needed. Only 5% coverage should be used to minimize risks of adverse effects. © 2013 The Authors Journal of the European Academy of Dermatology and Venereology © 2013 European Academy of Dermatology and Venereology.

  12. [Adverse reactions to vaccines].

    PubMed

    Eseverri, J L; Ranea, S; Marin, A

    2003-01-01

    Adverse reactions to vaccines are highly varied, ranging from mild local reactions to fatal outcomes. In the last few years many adverse reactions have been attributed to vaccines, often without justification. In agreement with the World Health Organization, these reactions can be classified as follows, depending on the cause: vaccination-induced reactions (due to an effect of the vaccine itself or to an idiosyncrasy); reactions due to errors in storage, manipulation and/or administration; and coincidental reactions (no causal relationship with the vaccine). Hypersensitivity reactions fall into six categories, depending on the causative agent: reactions due to some component of the infectious agent or one of its products; reactions due to adjuvants: aluminium hydroxide; reactions due to stabilizers: gelatin; reactions due to preservatives: thiomersal; reactions due to antibiotics: neomycin; and reactions due to a biological culture medium: chicken embryo cells. Allergic children should not be excluded from the normal vaccine calendar. Immunologically, allergic individuals are more susceptible to infection and to microbial and viral diseases, which often play an aggravating role. Rubella, whooping cough, and influenza usually exacerbate respiratory allergies. Non-vaccination carries a marked risk of contracting serious diseases such as poliomyelitis, tetanus, and diphtheria, etc. In a not too distant future, the techniques of genetic recombination and monoclonal antibody production will allow the creation of vaccines from organisms that cannot be cultivated in the laboratory or that produce small quantities of antigen. These techniques will also lead to identification of the antigens with the greatest immunogenic power and, consequently, to extremely pure vaccines. The adverse reactions to vaccines referred to our service account for between 0.59 % and 1.27 % of first visits in the last three years. We recorded a total of 48 adverse reactions to vaccines. Of

  13. First Operation of a Free-Electron Laser Generating GW Power Radiation at 32-Nm Wavelength

    SciTech Connect

    Ayvazian, V.; Baboi, N.; Bahr, J.; Balandin, V.; Beutner, B.; Brandt, A.; Bohnet, I.; Bolzmann, A.; Brinkmann, R.; Brovko, O.I.; Carneiro, J.P.; Casalbuoni, S.; Castellano, M.; Castro, P.; Catani, L.; Chiadroni, E.; Choroba, S.; Cianchi, A.; Delsim-Hashemi, H.; Di Pirro, G.; Dohlus, M.; /Saclay /Wurzburg U. /BESSY, Berlin /CANDLE, Yerevan /Darmstadt, Tech. Hochsch. /DESY /DESY, Zeuthen /Fermilab /Hamburg U. /INFM, Padua /Frascati /INFN, Milan /INFN, Rome2 /Sofiya, Inst. Nucl. Res. /Dubna, JINR /Orsay, LAL /Max Born Inst., Berlin /SLAC

    2006-09-15

    Many scientific disciplines ranging from physics, chemistry and biology to material sciences, geophysics and medical diagnostics need a powerful X-ray source with pulse lengths in the femtosecond range. This would allow, for example, time-resolved observation of chemical reactions with atomic resolution. Such radiation of extreme intensity, and tunable over a wide range of wavelengths, can be accomplished using high-gain free-electron lasers (FEL). Here we present results of the first successful operation of an FEL at a wavelength of 32 nm, with ultra-short pulses (25 fs FWHM), a peak power at the Gigawatt level, and a high degree of transverse and longitudinal coherence. The experimental data are in full agreement with theory. This is the shortest wavelength achieved with an FEL to date and an important milestone towards a user facility designed for wavelengths down to 6 nm. With a peak brilliance exceeding the state-of-the-art of synchrotron radiation sources by seven orders of magnitude, this device opens a new field of experiments, and it paves the way towards sources with even shorter wavelengths, such as the Linac Coherent Light Source at Stanford, USA, and the European X-ray Free Electron Laser Facility in Hamburg, Germany.

  14. 1.7 nm platinum nanoparticles: synthesis with glucose starch, characterization and catalysis.

    PubMed

    Engelbrekt, Christian; Sørensen, Karsten Holm; Lübcke, Teis; Zhang, Jingdong; Li, Qingfeng; Pan, Chao; Bjerrum, Niels J; Ulstrup, Jens

    2010-09-10

    Monodisperse platinum nanoparticles (PtNPs) were synthesized by a green recipe. Glucose serves as a reducing agent and starch as a stabilization agent to protect the freshly formed PtNP cores in buffered aqueous solutions. Among the ten buffers studied, 2-(N-morpholino)ethanesulfonic acid (MES), ammonium acetate and phosphate are the best media for PtNP size control and fast chemical preparation. The uniform sizes of the metal cores were determined by transmission electron microscopy (TEM) and found to be 1.8 ± 0.5, 1.7 ± 0.2 and 1.6 ± 0.5 nm in phosphate, MES and ammonium acetate buffer, respectively. The estimated total diameter of the core with a starch coating layer is 5.8-6.0 nm, based on thermogravimetric analysis (TGA). The synthesis reaction is simple, environmentally friendly, highly reproducible, and easy to scale up. The PtNPs were characterized electrochemically and show high catalytic activity for reduction of dioxygen and hydrogen peroxide as well as for oxidation of dihydrogen. The PtNPs can be transferred to carbon support materials with little demand for high specific surface area of carbon. This enables utilization of graphitized carbon blacks to prepare well-dispersed Pt/C catalysts, which exhibit significantly improved durability in the accelerated aging test under fuel cell mimicking conditions.

  15. Lack of photoprotection against UVB-induced erythema by immediate pigmentation induced by 382 nm radiation

    SciTech Connect

    Black, G.; Matzinger, E.; Gange, R.W.

    1985-11-01

    Immediate pigment darkening (IPD) was induced on the backs of 11 human volunteers of skin types III and IV by exposing the skin to UVA radiation (382 nm). The minimum erythema dose (MED) of UVB radiation was also determined by exposing sites to graduated doses of 304 nm radiation. The order of exposure of distinct anatomic areas was as follow: UVB followed by IPD induction; IPD induction followed by UVB; IPD induction followed 3 h later by UVB; and UVB only. Erythema responses induced by UVB were graded by inspection 24 h later and the MEDs in the 4 areas were compared. The induction of IPD before UVB exposure caused no significant change in the MED compared to sites receiving UVB only, or receiving UVA radiation after UVB, confirming that the IPD reaction does not protect against UVB-induced erythema. There was also no evidence of photorecovery, i.e., an increase in the MED of UVB resulting from exposure to longer wavelength, UV or visible radiation following UVB exposure.

  16. Use of 308 nm excimer laser for the treatment of chronic hand and foot eczema.

    PubMed

    Shroff, Anjali; Malajian, Dana; Czarnowicki, Tali; Rose, Sharon; Bernstein, Daniel M; Singer, Giselle K; Lebwohl, Mark G; Hadi, Suhail; Guttman-Yassky, Emma

    2016-08-01

    Chronic hand and foot eczema (CHFE), a prevalent debilitating disorder affecting approximately 15% of the population, presents a socioeconomic and psychosocial burden for patients and often follows a chronic course, refractory to conventional therapies. Thus, a large need exists for more effective therapeutics; the excimer laser (308 nm) is effective for some inflammatory skin diseases, but its efficacy has not been evaluated for CHFE. The study is a retrospective chart review conducted on 30 patients with recalcitrant CHFE (19 with hand involvement, four with foot involvement, and seven with both) treated twice weekly with excimer laser (308 nm) single wavelength ultraviolet (UV)B radiation between January 2013 and December 2014. Improvements in clinical scores included a 69% reduction in average physician's global assessment (PGA) scores (from 2.77 at baseline to 0.87 after treatment, P < 0.0001) with a parallel reduction in average modified total lesion/symptom scores of 70% (from 10.2 to 3.1, P < 0.0001). Only mild sunburn-like reactions were observed. This report evaluates excimer laser for patients with refractory CHFE and shows excellent and sustained efficacy for this treatment. Compared to other UV therapies, excimer laser offers lower cumulative doses of UV radiation by targeting specific areas. This effective treatment should be considered alone or in combination with other established or newer therapies. © 2016 The International Society of Dermatology.

  17. Below 70-nm contact hole pattern with RELACS process on ArF resist

    NASA Astrophysics Data System (ADS)

    Terai, Mamoru; Toyoshima, Toshiyuki; Ishibashi, Takeo; Tarutani, Shinji; Takahashi, Kiyohisa; Takano, Yusuke; Tanaka, Hatsuyuki

    2003-06-01

    A chemical shrink technology, RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist pattern. This "RELACS" process is a hole shrinking procedure that includes simple coating, baking, and rinsing applied after conventional photolithography. Our target is realize of sub-70nm hole pattern formation by using new RELACS for ArF resist. At present, RELACS process is introduced to mass production of KrF lithography by using AZ R200 (Product name of Clariant) mainly. Then first of all we reported process performance of conventional RELACS material, AZ R200 with ArF resist. However AZ R200 does not show satisfactory shrinkage on ArF resist. Thereupon, we started on the development of new RELACS corresponding to ArF resist. As the result, we developed new RELACS material including Cross Linking Accelerator (CLA). It was found that CLA is able to improve reactivity of RELACS with ArF-resist. By using this new RELACS, It is Realized sub-70nm hole pattern formation with ArF-Ex lithography and It is able to Control of hole size by mixing bake (MB) temperature and additive ratio of CLA. Moreover this process was realized that thickness of shrunk hole is increased.

  18. Electrical and thermal conduction in atomic layer deposition nanobridges down to 7 nm thickness.

    PubMed

    Yoneoka, Shingo; Lee, Jaeho; Liger, Matthieu; Yama, Gary; Kodama, Takashi; Gunji, Marika; Provine, J; Howe, Roger T; Goodson, Kenneth E; Kenny, Thomas W

    2012-02-08

    While the literature is rich with data for the electrical behavior of nanotransistors based on semiconductor nanowires and carbon nanotubes, few data are available for ultrascaled metal interconnects that will be demanded by these devices. Atomic layer deposition (ALD), which uses a sequence of self-limiting surface reactions to achieve high-quality nanolayers, provides an unique opportunity to study the limits of electrical and thermal conduction in metal interconnects. This work measures and interprets the electrical and thermal conductivities of free-standing platinum films of thickness 7.3, 9.8, and 12.1 nm in the temperature range from 50 to 320 K. Conductivity data for the 7.3 nm bridge are reduced by 77.8% (electrical) and 66.3% (thermal) compared to bulk values due to electron scattering at material and grain boundaries. The measurement results indicate that the contribution of phonon conduction is significant in the total thermal conductivity of the ALD films.

  19. The influence of roughness on reflectivity evolution of iron irradiated by 1064nm CW laser

    NASA Astrophysics Data System (ADS)

    Wu, Taotao; Zhu, Yongxiang; Wei, Chenghua; Zhou, Menlian; Wang, Lijun

    2017-05-01

    Reflectivity is an important physical quantity governing the effects of laser interaction with metal. It directly determines the energy deposition and the relevant thermal-mechanical response of metal. However, metal's reflectivity is not constant, which will be significantly affected by the surface states, such as roughness and oxidation. Industrial grade polycrystalline iron substrates with different surface roughness were prepared. Samples were ground and polished using progressively finer SiC paper and polisher. The surface morphology and roughness were determined by a 3D microscope. The surface roughness values of these samples varied from 0.08 μm to 2.65 μm. The reflectivity of samples at 1064nm were measured by an integral sphere equipped an InGaAs detector. The reflectivity values increased from 0.52 to 0.70 as the roughness decreasing. Later on, samples were irradiated by 1064nm continuous wave fiber laser in the intensity of 2 W/cm2. The real time reflectivity during laser illumination was also measured. As the samples' temperature rising, the surface oxidation reaction took place. The reflectivity evolved because of the molecular absorption and interfere effect of the oxides. The phenomena of reflectivity evolution were more obvious as samples smoother. Although the initial reflectivity of samples was different, samples show the same final reflectivity after laser irradiation.

  20. Latitudinal variation of 732.0 nm dayglow emission under geomagnetic storm conditions

    NASA Astrophysics Data System (ADS)

    Singh, Vir; Dharwan, Maneesha

    2016-07-01

    A comprehensive model is developed to study 732.0 nm dayglow emission. The Solar2000 EUV (extreme ultraviolet) flux model, neutral atmosphere model (NRLMSISE-00), latest transition probabilities and updated reaction rate coefficients are incorporated in the present model. The modeled volume emission rates (VER) are compared with the measurements as provided by Atmosphere Explorer-C satellite, Dynamics Explorer-2 spacecraft and WINDII measurements. The model is found in very good agreement with the measurements. This model is used to study the effects of geomagnetic storm on the 732.0 nm dayglow emission at various latitudes in northern hemisphere. It is found that the VER decreases as the latitude increases. The decrease in VER from low to mid latitudes is due to the decrease in atomic oxygen number density with latitude. The zenith intensity at the maximum geomagnetic activity is about 15% higher than the zenith intensity before the start of the geomagnetic storm in equatorial region. However, no appreciable change in the zenith intensity is found at higher latitudes (above 50° N). Further a negative correlation is found between the volume emission rate and DST index at all latitudes.

  1. High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications

    NASA Astrophysics Data System (ADS)

    Van de Casteele, J.; Bettiati, M.; Laruelle, F.; Cargemel, V.; Pagnod-Rossiaux, P.; Garabedian, P.; Raymond, L.; Laffitte, D.; Fromy, S.; Chambonnet, D.; Hirtz, J. P.

    2008-02-01

    We demonstrate very high reliability level on 980-1060nm high-power single-mode lasers through multi-cell tests. First, we show how our chip design and technology enables high reliability levels. Then, we aged 758 devices during 9500 hours among 6 cells with high current (0.8A-1.2A) and high submount temperature (65°C-105°C) for the reliability demonstration. Sudden catastrophic failure is the main degradation mechanism observed. A statistical failure rate model gives an Arrhenius thermal activation energy of 0.51eV and a power law forward current acceleration factor of 5.9. For high-power submarine applications (360mW pump module output optical power), this model exhibits a failure rate as low as 9 FIT at 13°C, while ultra-high power terrestrial modules (600mW) lie below 220 FIT at 25°C. Wear-out phenomena is observed only for very high current level without any reliability impact under 1.1A. For the 1060nm chip, step-stress tests were performed and a set of devices were aged during more than 2000 hours in different stress conditions. First results are in accordance with 980nm product with more than 100khours estimated MTTF. These reliability and performance features of 980-1060nm laser diodes will make high-power single-mode emitters the best choice for a number of telecommunication and industrial applications in the next few years.

  2. Comparison of the photothermal effects of 808nm gold nanorod and indocyanine green solutions using an 805nm diode laser

    NASA Astrophysics Data System (ADS)

    Hasanjee, Aamr M.; Zhou, Feifan; West, Connor; Silk, Kegan; Doughty, Austin; Bahavar, Cody F.; Chen, Wei R.

    2016-03-01

    Non-invasive laser immunotherapy (NLIT) is a treatment method for metastatic cancer which combines noninvasive laser irradiation with immunologically modified nanostructures to ablate a primary tumor and induce a systemic anti-tumor response. To further expand the development of NLIT, two different photosensitizing agents were compared: gold nanorods (GNR) with an optical absorption peak of 808 nm and indocyanine green (ICG) with an optical absorption peak of ~800 nm. Various concentrations of GNR and ICG solutions were irradiated at different power densities using an 805 nm diode laser, and the temperature of the solutions was monitored during irradiation using a thermal camera. For comparison, dye balls made up of a 1:1 volume ratio of gel solution to GNR or ICG solution were placed in phantom gels and were then irradiated using the 805 nm diode laser to imitate the effect of laser irradiation on in vivo tumors. Non-invasive laser irradiation of GNR solution for 2 minutes resulted in a maximum increase in temperature by 31.8 °C. Additionally, similar irradiation of GNR solution dye ball within phantom gel for 10 minutes resulted in a maximum temperature increase of 8.2 °C. Comparatively, non-invasive laser irradiation of ICG solution for 2 minutes resulted in a maximum increase in temperature by 28.0 °C. Similar irradiation of ICG solution dye ball within phantom gel for 10 minutes yielded a maximum temperature increase of only 3.4 °C. Qualitatively, these studies showed that GNR solutions are more effective photosensitizing agents than ICG solution.

  3. Emission of electrons from rare gas clusters after irradiation with intense VUV pulses of wavelength 100 nm and 32 nm

    NASA Astrophysics Data System (ADS)

    Ziaja, B.; Laarmann, T.; Wabnitz, H.; Wang, F.; Weckert, E.; Bostedt, C.; Möller, T.

    2009-10-01

    Kinetic Boltzmann equations are used to describe electron emission spectra obtained after irradiation of noble-gas clusters with intense vacuum ultraviolet (VUV) radiation from a free-electron-laser (FEL). The experimental photoelectron spectra give a complementary and more detailed view of nonlinear processes within atoms and clusters in an intense laser field compared to mass spectroscopy data. Results from our model obtained in this study confirm the experimental and theoretical findings on the differing ionization scenarios at longer (100 nm) and shorter (32 nm) VUV radiation wavelengths. At the wavelength of 100 nm the thermoelectronic electron emission dominates the emission spectra. This indicates the plasma formation and the inverse bremsstrahlung (IB) heating of electrons inside the plasma. This effect is clearly visible for xenon (with the fitted temperature of 6-7 eV), and less visible for argon (with the fitted temperature of 2-3 eV). The two-photon-ionization rate for argon that initiates the cluster ionization, is much lower than the single-photoionization rate for xenon. Also, more of the photoelectrons created within an argon cluster are able to leave it, as they are more energetic than those released from a xenon cluster. Therefore, the IB heating of plasma electrons in argon is less efficient than in xenon, as the density of the electrons remaining within the cluster is lower. At a wavelength of 32 nm the dominant ionization mechanism identified from the electron spectra of argon clusters is the direct multistep ionization. The signature of the thermalization of electrons is also observed. However, as the heating of electrons due to the inverse bremsstrahlung process is weak at these radiation wavelengths and pulse fluences, the increase of the electron temperature with the pulse intensity is mainly due to the increasing photoionization rate within the irradiated sample.

  4. Writing time estimation of EB mask writer EBM-9000 for hp16nm/logic11nm node generation

    NASA Astrophysics Data System (ADS)

    Kamikubo, Takashi; Takekoshi, Hidekazu; Ogasawara, Munehiro; Yamada, Hirokazu; Hattori, Kiyoshi

    2014-10-01

    The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate devices (FinFET) are currently the main driver for scalability, other types of devices, such as 3D devices, are being realized to relax the scaling of the node. In lithography, double or multiple patterning using ArF immersion scanners is still a realistic solution offered for the hp16nm node fabrication. Other lithography candidates are those called NGL (Next Generation Lithography), such as DSA (Directed-Self-Assembling) or nanoimprint. In such situations, shot count for mask making by electron beam writers will not increase. Except for some layers, it is not increasing as previously predicted. On the other hand, there is another aspect that increases writing time. The exposure dose for mask writing is getting higher to meet tighter specifications of CD uniformity, in other words, reduce LER. To satisfy these requirements, a new electron beam mask writer, EBM-9000, has been developed for hp16nm/logic11nm generation. Electron optical system, which has the immersion lens system, was evolved from EBM-8000 to achieve higher current density of 800A/cm2. In this paper, recent shot count and dose trend are discussed. Also, writing time is estimated for the requirements in EBM-9000.

  5. High efficient photovoltaic power converter suitable for 920nm to 970nm InGaAs laser diodes

    NASA Astrophysics Data System (ADS)

    Liu, James; Wu, Ta-Chung; Cohen, Mort; Werthen, Jan G.

    2005-09-01

    In this work, we report a highly efficient Photovoltaic Power Converter (PPC) suitable for 920 nm to 970 nm InGaAs MQW lasers for the first time. The epitaxial layers were grown by low pressure MOCVD on the semi-insulting GaAs substrate. The epi layers consist of a p-n junction of In0.12Ga0.88As and the window layer of p+ AlInGaAs. The device is made of seven or eight pie-segments of equal area series-connected by means of air-bridges. Under 500mW of 940nm laser illumination, the open-circuit voltage of the eight-segment InGaAs chip is 6.7V. The short-circuit current is 29.7mA. Its maximum delivered electrical power is 171.2mW, equal to a 34.2% overall power conversion efficiency. We also demonstrate the high temperature characteristic and stability of the device.

  6. Mask phase and transmission variation effects on wafer critical dimensions for nodes 65nm and 45nm

    NASA Astrophysics Data System (ADS)

    Dufaye, F.; Gough, S.; Sundermann, F.; Farys, V.; Miyashita, H.; Sartelli, L.; Perissinotti, F.; Buttgereit, U.; Perlitz, S.; Birkner, R.

    2010-05-01

    In microelectronic industry, mainly from the 65nm node, phase shift photomasks (PSM) are increasingly used for critical layers, optical properties of the shifter (MoSi) giving a better control of critical dimensions (CD) in photoresist. Fabusers and maskshops have committed on specifications that restrict phase and transmission variations within certain limits. The goal of this study is to validate and/or update these previously admitted limits. A specific test reticle has been jointly designed with several structures representative of 65nm and 45nm nodes and then manufactured with a specific process in order to voluntarily degrade the phase and transmission uniformity within the mask. Knowing all CD and their related phase and transmission on mask, CD variations seen on wafers have been directly linked to phase and transmission variations. In parallel, rigorous simulations have been performed using Panoramic software in order to predict effects of phase and transmission variations on wafer. This reticle has been also used for early studies to evaluate the impact of phase and transmission variations on optical proximity correction (OPC) model.

  7. Improved CD control for 45-40 nm CMOS logic patterning: anticipation for 32-28 nm

    NASA Astrophysics Data System (ADS)

    Le Gratiet, Bertrand; Sundermann, Frank; Massin, Jean; Decaux, Marianne; Thivolle, Nicolas; Baron, Fabrice; Ostrovsky, Alain; Monget, Cedric; Chapon, Jean Damien; Blancquaert, Yoann; Dabertrand, Karen; Thevenon, Lionel; Bry, Benedicte; Cluet, Nicolas; Borot, Bertrand; Bingert, Raphael; Devoivre, Thierry; Gourard, Pascal; Babaud, Laurène; Buttgereit, Ute; Birkner, Robert; Joyner, Mark; Graitzer, Erez; Cohen, Avi

    2010-03-01

    Since 2008, we have been presenting some papers regarding CMOS 45nm logic gate patterning activity to reduce CD dispersion. After a global CD budget evaluation at SPIE08, we have been focusing on Intrafield CD corrections using Dose MapperTM. The story continues and since then we have pursued our intrafield characterisation and focus on ways to get Dose MapperTM dose recipe created before the first silicon is coming. In fact 40nm technology is already more demanding and we must be ready with integrated solutions for 32/28nm node. Global CD budget can be divided in Lot to Lot, Wafer to Wafer, Intra wafer and Intra field component. We won't talk here about run to run solutions which are put in place for Lot to Lot and Wafer to Wafer. We will emphasize on the intrafield / intrawafer process corrections and outline process compensation control and strategy. A lot of papers regarding intrafield CD compensation are available in the litterature but they do not necesserally fit logic manufacturing needs or possibilities. We need to put similar solutions in place which are comprehensive and flexible. How can we correct upfront an Etch chamber CD profile combined with a mask and scanner CD signature? How can we get intrafield map from random logic devices? This is what we will develop in this paper.

  8. Generation of coherent 19- and 38-nm radiation at a free-electron laser directly seeded at 38 nm.

    PubMed

    Ackermann, S; Azima, A; Bajt, S; Bödewadt, J; Curbis, F; Dachraoui, H; Delsim-Hashemi, H; Drescher, M; Düsterer, S; Faatz, B; Felber, M; Feldhaus, J; Hass, E; Hipp, U; Honkavaara, K; Ischebeck, R; Khan, S; Laarmann, T; Lechner, C; Maltezopoulos, Th; Miltchev, V; Mittenzwey, M; Rehders, M; Rönsch-Schulenburg, J; Rossbach, J; Schlarb, H; Schreiber, S; Schroedter, L; Schulz, M; Schulz, S; Tarkeshian, R; Tischer, M; Wacker, V; Wieland, M

    2013-09-13

    Initiating the gain process in a free-electron laser (FEL) from an external highly coherent source of radiation is a promising way to improve the pulse properties such as temporal coherence and synchronization performance in time-resolved pump-probe experiments at FEL facilities, but this so-called "seeding" suffers from the lack of adequate sources at short wavelengths. We report on the first successful seeding at a wavelength as short as 38.2 nm, resulting in GW-level, coherent FEL radiation pulses at this wavelength as well as significant second harmonic emission at 19.1 nm. The external seed pulses are about 1 order of magnitude shorter compared to previous experiments allowing an ultimate time resolution for the investigation of dynamic processes enabling breakthroughs in ultrafast science with FELs. The seeding pulse is the 21st harmonic of an 800-nm, 15-fs (rms) laser pulse generated in an argon medium. Methods for finding the overlap of seed pulses with electron bunches in spatial, longitudinal, and spectral dimensions are discussed and results are presented. The experiment was conducted at FLASH, the FEL user facility at DESY in Hamburg, Germany.

  9. 2 nm continuously tunable 488nm micro-integrated diode-laser-based SHG light source for Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Braune, M.; Maiwald, M.; Sumpf, B.; Tränkle, G.

    2016-04-01

    Raman spectroscopy in the visible spectral range is of great interest due to resonant Raman effects. Nevertheless, fluorescence and ambient light can mask the weak Raman lines. Shifted excitation Raman difference spectroscopy is a demonstrated tool to overcome this drawback. To apply this method, a light source with two alternating wavelengths is necessary. The spectral distance between these two wavelengths has to be adapted to the width of the Raman signal. According to the sample under investigation the width of the Raman signal could be in the range of 3 cm-1 - 12 cm-1. In this work, a micro-integrated light source emitting at 488 nm with a continuous wavelength tuning range up to 2 nm (83 cm-1) is presented. The pump source, a DFB laser emitting at 976 nm, and a periodically poled lithium niobate (PPLN) ridge waveguide crystal is used for the second harmonic generation (SHG). Both components are mounted on a μ-Peltier-element for temperature control. Here, a common wavelength tuning of the pump wavelength and the acceptance bandwidth of the SHG crystal via temperature is achieved. With the results the light source is suitable for portable Raman and SERDS experiments with a flexible spectral distance between both excitation wavelengths for SERDS with respect to the sample under investigation.

  10. [High-order derivative spectroscopy of infrared absorption spectra of the reaction centers from Rhodobacter sphaeroides].

    PubMed

    2005-01-01

    The infrared absorption spectra of reduced and chemically oxidized reaction center preparations from the purple bacterium Rhodobacter sphaeroides were investigated by means of high-order derivative spectroscopy. The model Gaussian band with a maximum at 810 nm and a half-band of 15 nm found in the absorption spectrum of the reduced reaction center preparation is eliminated after the oxidation of photoactive bacteriochlorophyll dimer (P). This band was related to the absorption of the P(+)y excitonic band of P. On the basis of experimental results, it was concluded that the bleaching of the P(+)y absorption band at 810 nm in the oxidized reaction center preparations gives the main contribution to the blue shift of the 800 nm absorption band of Rb. sphaeroides reaction centers.

  11. Noncanonical reactions of flavoenzymes.

    PubMed

    Sobrado, Pablo

    2012-11-05

    Enzymes containing flavin cofactors are predominantly involved in redox reactions in numerous cellular processes where the protein environment modulates the chemical reactivity of the flavin to either transfer one or two electrons. Some flavoenzymes catalyze reactions with no net redox change. In these reactions, the protein environment modulates the reactivity of the flavin to perform novel chemistries. Recent mechanistic and structural data supporting novel flavin functionalities in reactions catalyzed by chorismate synthase, type II isopentenyl diphosphate isomerase, UDP-galactopyranose mutase, and alkyl-dihydroxyacetonephosphate synthase are presented in this review. In these enzymes, the flavin plays either a direct role in acid/base reactions or as a nucleophile or electrophile. In addition, the flavin cofactor is proposed to function as a "molecular scaffold" in the formation of UDP-galactofuranose and alkyl-dihydroxyacetonephosphate by forming a covalent adduct with reaction intermediates.

  12. Reaction spreading on graphs.

    PubMed

    Burioni, Raffaella; Chibbaro, Sergio; Vergni, Davide; Vulpiani, Angelo

    2012-11-01

    We study reaction-diffusion processes on graphs through an extension of the standard reaction-diffusion equation starting from first principles. We focus on reaction spreading, i.e., on the time evolution of the reaction product M(t). At variance with pure diffusive processes, characterized by the spectral dimension d{s}, the important quantity for reaction spreading is found to be the connectivity dimension d{l}. Numerical data, in agreement with analytical estimates based on the features of n independent random walkers on the graph, show that M(t)∼t{d{l}}. In the case of Erdös-Renyi random graphs, the reaction product is characterized by an exponential growth M(t)e{αt} with α proportional to ln(k), where (k) is the average degree of the graph.

  13. Lower thermospheric nitric oxide concentrations derived from WINDII observations of the green nightglow continuum at 553.1 nm

    NASA Astrophysics Data System (ADS)

    von Savigny, C. H. A.; McDade, I. C.; Shepherd, G. G.; Rochon, Y.

    1999-11-01

    Vertical profiles of nitric oxide in the altitude range 90 to 105 km are derived from 553 nm nightglow continuum measurements made with the Wind Imaging Interferometer (WINDII) on the Upper Atmosphere Research Satellite (UARS). The profiles are derived under the assumption that the continuum emission is due entirely to the NO+O air afterglow reaction. Vertical profiles of the atomic oxygen density, which are required to determine the nitric oxide concentrations, are derived from coordinated WINDII measurements of the atomic oxygen OI 557.7 nm nightglow emission. Data coverage for local solar times ranging from 20 h to 04 h, and latitudes ranging from 42°S to 42°N, is achieved by zonally averaging and binning data obtained on 18 nights during a two-month period extending from mid-November 1992 until mid-January 1993. The derived nitric oxide concentrations are significantly smaller than those obtained from rocket measurements of the airglow continuum but they do compare well with model expectations and nitric oxide densities measured using the resonance fluorescence technique on the Solar Mesosphere Explorer satellite. The near-global coverage of the WINDII observations and the similarities to the nitric oxide global morphology established from other satellite measurements strongly suggests that the NO+O reaction is the major source of the continuum near 553 nm and that there is no compelling reason to invoke additional sources of continuum emission in this immediate spectral region.

  14. Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

    PubMed

    Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

    2015-01-01

    Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

  15. Jupiter's Belt-Zone Boundary (Methane filter, 732 nm)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    Mosaic of a belt-zone boundary near Jupiter's equator. The images that make up the four quadrants of this mosaic were taken within a few minutes of each other and show Jupiter's appearance at 732 nanometers (nm). Sunlight at 732 nm is weakly absorbed by atmospheric methane. This absorption lowers the total amount of scattered light detected by the Galileo spacecraft while enhancing the fraction that comes from higher in Jupiter's atmosphere where less methane is present. The features of the lower ammonia cloud deck that are seen at 756 nm remain visible, but features in the higher, diffuse cloud are made more apparent.

    The bowed shape of the clouds in the center of the image is created by a combination of stretching in the eastward direction by strong winds and stretching in the north-south direction by weaker winds. The precise shape of the bow and the eastward wind speeds can be measured. The north-south wind speeds, too small to be directly measured, then can be calculated. These images may provide the first indirect measurement of Jupiter's north-south winds.

    The Jet Propulsion Laboratory, Pasadena, CA manages the mission for NASA's Office of Space Science, Washington, DC.

    This image and other images and data received from Galileo are posted on the World Wide Web, on the Galileo mission home page at URL http://galileo.jpl.nasa.gov. Background information and educational context for the images can be found at URL http://www.jpl.nasa.gov/galileo/sepo

  16. Reduced nonlinearities in 100-nm high SOI waveguides

    NASA Astrophysics Data System (ADS)

    Lacava, C.; Marchetti, R.; Vitali, V.; Cristiani, I.; Giuliani, G.; Fournier, M.; Bernabe, S.; Minzioni, P.

    2016-03-01

    Here we show the results of an experimental analysis dedicated to investigate the impact of optical non linear effects, such as two-photon absorption (TPA), free-carrier absorption (FCA) and free-carrier dispersion (FCD), on the performance of integrated micro-resonator based filters for application in WDM telecommunication systems. The filters were fabricated using SOI (Silicon-on-Insulator) technology by CEA-Leti, in the frame of the FP7 Fabulous Project, which aims to develop low-cost and high-performance integrated optical devices to be used in new generation passive optical- networks (NG-PON2). Different designs were tested, including both ring-based structures and racetrack-based structures, with single-, double- or triple- resonator configuration, and using different waveguide cross-sections (from 500 x 200 nm to 825 x 100 nm). Measurements were carried out using an external cavity tunable laser source operating in the extended telecom bandwidth, using both continuous wave signals and 10 Gbit/s modulated signals. Results show that the use 100-nm high waveguide allows reducing the impact of non-linear losses, with respect to the standard waveguides, thus increasing by more than 3 dB the maximum amount of optical power that can be injected into the devices before causing significant non-linear effects. Measurements with OOK-modulated signals at 10 Gbit/s showed that TPA and FCA don't affect the back-to-back BER of the signal, even when long pseudo-random-bit-sequences (PRBS) are used, as the FCD-induced filter-detuning increases filter losses but "prevents" excessive signal degradation.

  17. 28nm node process optimization: a lithography centric view

    NASA Astrophysics Data System (ADS)

    Seltmann, Rolf

    2014-10-01

    Many experts claim that the 28nm technology node will be the most cost effective technology node forever. This results from primarily from the cost of manufacturing due to the fact that 28nm is the last true Single Patterning (SP) node. It is also affected by the dramatic increase of design costs and the limited shrink factor of the next following nodes. Thus, it is assumed that this technology still will be alive still for many years. To be cost competitive, high yields are mandatory. Meanwhile, leading edge foundries have optimized the yield of the 28nm node to such a level that that it is nearly exclusively defined by random defectivity. However, it was a long way to go to come to that level. In my talk I will concentrate on the contribution of lithography to this yield learning curve. I will choose a critical metal patterning application. I will show what was needed to optimize the process window to a level beyond the usual OPC model work that was common on previous nodes. Reducing the process (in particular focus) variability is a complementary need. It will be shown which improvements were needed in tooling, process control and design-mask-wafer interaction to remove all systematic yield detractors. Over the last couple of years new scanner platforms were introduced that were targeted for both better productivity and better parametric performance. But this was not a clear run-path. It needed some extra affords of the tool suppliers together with the Fab to bring the tool variability down to the necessary level. Another important topic to reduce variability is the interaction of wafer none-planarity and lithography optimization. Having an accurate knowledge of within die topography is essential for optimum patterning. By completing both the variability reduction work and the process window enhancement work we were able to transfer the original marginal process budget to a robust positive budget and thus ensuring high yield and low costs.

  18. Nuclear reaction studies

    SciTech Connect

    Alexander, J.M.; Lacey, R.A.

    1994-11-01

    Research focused on the statistical and dynamical properties of ``hot`` nuclei formed in symmetric heavy-ion reactions. Theses included ``flow`` measurements and the mechanism for multifragment disassembly. Model calculations are being performed for the reactions C+C, Ne+Al, Ar+Sc, Kr+Nb, and Xe+La. It is planned to study {sup 40}Ar reactions from 27 to 115 MeV/nucleon. 2 figs., 41 refs.

  19. Photoneutron Reactions in Nucleosynthesis

    NASA Astrophysics Data System (ADS)

    Utsunomiya, Hiroaki

    Photoneutron reactions are discussed in the context of nucleosynthesis with emphasis on a unified understanding of (γ, n) and (n, γ) reactions for heavy nuclei through the γ-ray strength function and a revisit to explosive nucleosynthesis of 9Be through the reciprocity theorem. The role of photonuclear reactions in nucleosynthesis is supplemented by the photonuclear data project (IAEA-CRP F42032) and will be strengthened in the Extreme Light Infrastructure-Nuclear Physics (ELI-NP) in the future.

  20. Immune reaction to propanidid.

    PubMed

    Christmas, D

    1984-05-01

    An adverse reaction to the intravenous anaesthetic agent propanidid is described in which the main features were hypotension, facial erythema, and abdominal pain. Changes in serum complement levels and differential white cell counts indicate that this was an immune reaction mediated by the classical complement pathway. The immune reaction apparently involved antibodies other than those of the IgE (reagin) class, and circumstantial evidence suggests that it was specific to propanidid rather than to the entire formulation or to Cremophor EL.

  1. In vitro and in vivo activation of hypericin with the incoherent light source PDT 1200 SOA (520-750 nm) and with solar simulated radiation (290-2500 nm).

    PubMed

    Schempp, C M; Simon-Haarhaus, B; Heine, A; Schöpf, E; Simon, J C

    1999-02-01

    The photodynamic active plant pigment hypericin is a possible new photosensitizer for photodynamic therapy. Hypericin shows absorption maxima in the ultraviolet (330 nm) and visible light range (550 and 588 nm). The present study compared the photoactivation of hypericin with the incoherent light source PDT 1200 SOA (520-750 nm) to that with a 1000 watt solar simulator (290-2500 nm). Hypericin displayed dose and time dependent phototoxic effects in the keratinocyte cell line HaCaT in vitro and after intracutaneous in vivo application with both light sources. In vivo, delayed (48 h) photosensitivity in hypericin-sensitized skin was observed. With intracutaneous application of 100 ng/ml hypericin, no phototoxic reaction could be produced. The PDT 1200 SOA was about four times more effective in vitro and about ten times more effective in vivo when compared to the solar simulator. Since the PDT 1200 SOA allows homogenous irradiation of large areas, we conclude that the PDT 1200 SOA is an effective and convenient light source for in vitro and in vivo studies using hypericin.

  2. Novel high sensitivity EUV photoresist for sub-7nm node

    NASA Astrophysics Data System (ADS)

    Nagai, Tomoki; Nakagawa, Hisashi; Naruoka, Takehiko; Tagawa, Seiichi; Oshima, Akihiro; Nagahara, Seiji; Shiraishi, Gosuke; Yoshihara, Kosuke; Terashita, Yuichi; Minekawa, Yukie; Buitrago, Elizabeth; Ekinci, Yasin; Yildirim, Oktay; Meeuwissen, Marieke; Hoefnagels, Rik; Rispens, Gijsbert; Verspaget, Coen; Maas, Raymond

    2016-03-01

    Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.

  3. Ocular safety limits for 1030nm femtosecond laser cataract surgery

    NASA Astrophysics Data System (ADS)

    Wang, Jenny; Sramek, Christopher; Paulus, Yannis M.; Lavinsky, Daniel; Schuele, Georg; Anderson, Dan; Dewey, David; Palanker, Daniel V.

    2013-03-01

    Application of femtosecond lasers to cataract surgery has added unprecedented precision and reproducibility but ocular safety limits for the procedure are not well-quantified. We present an analysis of safety during laser cataract surgery considering scanned patterns, reduced blood perfusion, and light scattering on residual bubbles formed during laser cutting. Experimental results for continuous-wave 1030 nm irradiation of the retina in rabbits are used to calibrate damage threshold temperatures and perfusion rate for our computational model of ocular heating. Using conservative estimates for each safety factor, we compute the limits of the laser settings for cataract surgery that optimize procedure speed within the limits of retinal safety.

  4. Fast efficient Ca atomic resonance filter at 423 nm.

    PubMed

    Walther, F G

    1992-11-15

    An optically pumped active Ca atomic resonance filter is demonstrated, applicable to background-limited optical communications through scatter channels. In pump saturation, the filter should detect 50% of the incident 423-nm signal power with an internal photon gain of 6 and a response time of 10 micros, 2 orders of magnitude faster than a passive Ca filter. Response time of 100 micros has been demonstrated, limited by available pump power. The filter maintains the wide field of view and reduced solar background associated with atomic absorption at the Ca Fraunhofer line while permitting higher data rate communications.

  5. Exposure tool for 32-nm lithography: requirements and development progress

    NASA Astrophysics Data System (ADS)

    Hazelton, Andrew J.; Ishikawa, Jun; Magome, Nobutaka

    2008-11-01

    Double patterning is recognized as the best candidate for 32 nm half-pitch lithography. Currently pitch splitting processes are being considered for logic processes and spacer processes are being considered for memory. In pitch splitting, errors in overlay between the first and second exposure become CD errors on the final pattern. For this reason, overlay requirements are severe for pitch splitting double patterning. Revised CD and overlay budgets are presented, as well as technical requirements to satisfy these budgets. Spacer processes do not have similar restrictions on overlay, so they can be achieved using current immersion tools. Exposure tool requirements for double patterning are discussed and modifications to current platforms are described.

  6. Investigation of electron beam stabilization of 193-nm photoresists

    NASA Astrophysics Data System (ADS)

    Kim, Myoung-Soo; Park, Jong-Woon; Kim, Hak-Joon; Jun, Bum-Jin; Gil, Myung-Goon; Kim, Bong-Ho; Ross, Matthew F.; Livesay, William R.

    2001-08-01

    193nm lithography is a promising candidate for the fabrication of microelectronic devices at the 130nm design rule and below. With smaller feature sizes, below 130nm, reduced resist thickness is essential because of the pattern collapse issues at high aspect ratios and the limited depth of focus with 193nm lithography tools. However, ArF resists have shown problems with etch selectivity, especially with the thin resist layers necessary. Additionally, pattern slimming during CD-SEM measurement, due to the nature of the resist chemistry, is an issue with feature stability after patterning. At present, many studies have been performed for improving the etch selectivity of resists and addressing line slimming issues. In this study, the electron beam stabilization process has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3.0. The electron beam stabilization has been applied to two different ArF resist types; acrylate and cyclic-olefin- maleic-anhydride (COMA), which have been evaluated with respect to materials properties, etch selectivity, and line slimming performance as a function of electron beam dose and etch condition. Film shrinkage and the change in index of refraction were monitored as a function of stabilization condition. The chemical properties were characterized before and after electron beam stabilization using FTIR analysis. Blanket resist etch rate studies were performed as a function of stabilization condition for each resist type. Cross- sectional views of resist patterns after etch processing were also investigated to evaluate the improvement in etch resistance provided by the electron beam process. CD SEM measurements were performed to evaluate the impact of the stabilization process on the patterned features. The issue of line slimming has also been evaluated, with and without electron beam stabilization, for the different ArF resist materials considered. The results were compared with a Kr

  7. Spectroscopy of Pluto, 380-930 Nm at Six Longitudes

    NASA Technical Reports Server (NTRS)

    Cruikshank, D. P.; Pinilla-Alonso, N.; Lorenzi, V.; Grundy, William; Licandro, J.; Binzel, R. P.

    2014-01-01

    We have obtained spectra of the Pluto-Charon pair (unresolved) in the wavelength range 380-930 nm with resolution approx..450 at six roughly equally spaced longitudes. The data were taken in May and June, 2014, with the 4.2-m Isaac Newton Telescope at Roque de Los Muchachos Observatory in the Canary Islands, using the ACAM (auxiliary-port camera) in spectrometer mode, and using two solar analog stars. The new spectra clearly show absorption bands of solid CH4 at 620, 728, and 850-910 nm, which were known from earlier work. The 620-nm CH4 band is intrinsically very weak, and its appearance indicates a long optical path-length through the ice. This is especially true if it arises from CH4 dissolved in N2 ice. Earlier work (Owen et al. Science 261, 745, 1993) on the near-infrared spectrum of Pluto (1-2.5 microns) has shown that the CH4 bands are shifted to shorter wavelengths because the CH4 occurs as a solute in beta-phase crystalline N2. The optical path-length through the N2 crystals must be on the order of several cm to produce the N2 band observed at 2.15 microns. The new spectra exhibit a pronounced red slope across the entire wavelength range; the slope is variable with longitude, and differs in a small but significant way from that measured at comparable longitudes by Grundy & Fink (Icarus 124, 329, 1996) in their 15-year study of Pluto's spectrum (500-1000 nm). The new spectra will provide an independent means for calibrating the color filter bands on the Multispectral Visible Imaging Camera (MVIC) (Reuter et al. Space Sci. Rev. 140, 129, 2008) on the New Horizons spacecraft, which will encounter the Pluto-Charon system in mid-2015. They will also form the basis of modeling the spectrum of Pluto at different longitudes to help establish the nature of the non-ice component(s) of Pluto's surface. It is presumed that the non-ice component is the source of the yellow-red coloration of Pluto, which is known to be variable across the surface.

  8. Development of high coherence high power 193nm laser

    NASA Astrophysics Data System (ADS)

    Tanaka, Satoshi; Arakawa, Masaki; Fuchimukai, Atsushi; Sasaki, Yoichi; Onose, Takashi; Kamba, Yasuhiro; Igarashi, Hironori; Qu, Chen; Tamiya, Mitsuru; Oizumi, Hiroaki; Ito, Shinji; Kakizaki, Koji; Xuan, Hongwen; Zhao, Zhigang; Kobayashi, Yohei; Mizoguchi, Hakaru

    2016-03-01

    We have been developing a hybrid 193 nm ArF laser system that consists of a solid state seeding laser and an ArF excimer laser amplifier for power-boosting. The solid state laser consists of an Yb-fiber-solid hybrid laser system and an Er-fiber laser system as fundamentals, and one LBO and three CLBO crystals for frequency conversion. In an ArF power amplifier, the seed laser passes through the ArF gain media three times, and an average power of 110 W is obtained. As a demonstration of the potential applications of the laser, an interference exposure test is performed.

  9. Megasonic cleaning strategy for sub-10nm photomasks

    NASA Astrophysics Data System (ADS)

    Hsu, Jyh-Wei; Samayoa, Martin; Dress, Peter; Dietze, Uwe; Ma, Ai-Jay; Lin, Chia-Shih; Lai, Rick; Chang, Peter; Tuo, Laurent

    2016-10-01

    One of the main challenges in photomask cleaning is balancing particle removal efficiency (PRE) with pattern damage control. To overcome this challenge, a high frequency megasonic cleaning strategy is implemented. Apart from megasonic frequency and power, photomask surface conditioning also influences cleaning performance. With improved wettability, cleanliness is enhanced while pattern damage risk is simultaneously reduced. Therefore, a particle removal process based on higher megasonic frequencies, combined with proper surface pre-treatment, provides improved cleanliness without the unintended side effects of pattern damage, thus supporting the extension of megasonic cleaning technology into 10nm half pitch (hp) device node and beyond.

  10. Spectroscopy of Pluto at six longitudes, 380-930 nm

    NASA Astrophysics Data System (ADS)

    Cruikshank, Dale P.; Pinilla-Alonso, Noemi; Lorenzi, Vania; Grundy, Will M.; Licandro, Javier; Binzel, Richard P.

    2014-11-01

    We have obtained spectra of the Pluto-Charon pair (unresolved) in the wavelength range 380-930 nm with resolution ~450 at six roughly equally spaced longitudes. The data were taken in May and June, 2014, with the 4.2-m Isaac Newton Telescope at Roque de Los Muchachos Observatory in the Canary Islands, using the ACAM (auxiliary-port camera) in spectrometer mode, and using two solar analog stars. The new spectra clearly show absorption bands of solid CH4 at 620, 728, and 850-910 nm, which were known from earlier work. The 620-nm CH4 band is intrinsically very weak, and its appearance indicates a long optical pathlength through the ice. This is especially true if it arises from CH4 dissolved in N2 ice. Earlier work (Owen et al. Science 261, 745, 1993) on the near-infrared spectrum of Pluto (1-2.5 µm) has shown that the CH4 bands are shifted to shorter wavelengths because the CH4 occurs as a solute in beta-phase crystalline N2. The optical pathlength through the N2 crystals must be on the order of several cm to produce the N2 band observed at 2.15 µm. The new spectra exhibit a pronounced red slope across the entire wavelength range; the slope is variable with longitude, and differs in a small but significant way from that measured at comparable longitudes by Grundy & Fink (Icarus 124, 329, 1996) in their 15-year study of Pluto’s spectrum (500-1000 nm). The new spectra will provide an independent means for calibrating the color filter bands on the Multispectral Visible Imaging Camera (MVIC) (Reuter et al. Space Sci. Rev. 140, 129, 2008) on the New Horizons spacecraft, which will encounter the Pluto-Charon system in mid-2015. They will also form the basis of modeling the spectrum of Pluto at different longitudes to help establish the nature of the non-ice component(s) of Pluto’s surface. It is presumed that the non-ice component is the source of the yellow-red coloration of Pluto, which is known to be variable across the surface.

  11. IFEL-Chicane Based Microbuncher at 800nm

    NASA Astrophysics Data System (ADS)

    Sears, Christopher M. S.; Colby, Eric; Barnes, Christopher

    2004-12-01

    As a first stage to net acceleration in a laser based EM structure RF electron pulses must be microbunched to match the laser wavelength. We report on the design of an undulator and chicane for microbunching at 800nm using an inverse free electron laser (IFEL) interaction. This includes design considerations for the hardware itself, the laser IFEL interaction and bunching performance, and a full 3D particle tracking simulation to study the focusing effects and possible emittance growth due to the fringe fields of the magnets. The talk will close with a discussion of laser-electron beam diagnostics for overlap in the undulator and for diagnosing microbunching performance.

  12. Sleeve reaction chamber system

    SciTech Connect

    Northrup, M Allen; Beeman, Barton V; Benett, William J; Hadley, Dean R; Landre, Phoebe; Lehew, Stacy L; Krulevitch, Peter A

    2009-08-25

    A chemical reaction chamber system that combines devices such as doped polysilicon for heating, bulk silicon for convective cooling, and thermoelectric (TE) coolers to augment the heating and cooling rates of the reaction chamber or chambers. In addition the system includes non-silicon-based reaction chambers such as any high thermal conductivity material used in combination with a thermoelectric cooling mechanism (i.e., Peltier device). The heat contained in the thermally conductive part of the system can be used/reused to heat the device, thereby conserving energy and expediting the heating/cooling rates. The system combines a micromachined silicon reaction chamber, for example, with an additional module/device for augmented heating/cooling using the Peltier effect. This additional module is particularly useful in extreme environments (very hot or extremely cold) where augmented heating/cooling would be useful to speed up the thermal cycling rates. The chemical reaction chamber system has various applications for synthesis or processing of organic, inorganic, or biochemical reactions, including the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction.

  13. Ultrafast chemical reactions in shocked nitromethane probed with dynamic ellipsometry and transient absorption spectroscopy.

    PubMed

    Brown, Kathryn E; McGrane, Shawn D; Bolme, Cynthia A; Moore, David S

    2014-04-10

    Initiation of the shock driven chemical reactions and detonation of nitromethane (NM) can be sensitized by the addition of a weak base; however, the chemical mechanism by which sensitization occurs remains unclear. We investigated the shock driven chemical reaction in NM and in NM sensitized with diethylenetriamine (DETA), using a sustained 300 ps shock driven by a chirped Ti:sapphire laser. We measured the solutions' visible transient absorption spectra and measured interface particle and shock velocities of the nitromethane solutions using ultrafast dynamic ellipsometry. We found there to be a volume-increasing reaction that takes place around interface particle velocity up = 2.4 km/s and up = 2.2 km/s for neat NM and NM with 5% DETA, respectively. The rate at which transient absorption increases is similar in all mixtures, but with decreasing induction times for solutions with increasing DETA concentrations. This result supports the hypothesis that the chemical reaction mechanisms for shocked NM and NM with DETA are the same. Data from shocked NM are compared to literature experimental and theoretical data.

  14. Investigation of photobiomodulation potentiality by 635 and 809 nm lasers on human osteoblasts.

    PubMed

    Bölükbaşı Ateş, Gamze; Ak Can, Ayşe; Gülsoy, Murat

    2017-04-01

    Photobiomodulation (PBM) describes light-induced photochemical reactions achieved by the application of red or near infrared lasers/LED light with low energy densities. This noninvasive and painless method has been used in some clinical areas but controversial outcomes demand a skeptical look for its promising and potential effects. In this detailed in vitro study, the osteoblast cells were irradiated with 635 and 809 nm diode lasers at energy densities of 0.5, 1, and 2 J/cm(2). Cell viability, proliferation, bone formation, and osteoblast differentiation were evaluated by methylthiazole tetrazolium (MTT) assay, Alamar Blue assay, acridine orange/propidium iodide staining, alkaline phosphatase (ALP) activity, Alizarin red staining, and reverse-transcription polymerase chain reaction (RT-PCR) to test the expression of collagen type I, ALPL, and osteocalcin. The results indicate that studied energy doses have a transient effect (48 h after laser irradiation) on the osteoblast viability and proliferation. Similarly, laser irradiation did not appear to have any effect on ALP activity. These results were confirmed by RT-PCR analysis of osteoblast markers. This study suggests that several irradiation parameters and variations in the methods should be clearly established in the laboratory before laser treatment becomes a postulated application for bone tissue regeneration in clinical level.

  15. Feasibility study of sub-10-nm-half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: II. Stochastic effects

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2015-03-01

    Line edge roughness (LER) rapidly increases in the sub-10-nm-half-pitch region of resist processes used for the fabrication of semiconductor devices. Sub-10-nm fabrication with high throughput is a challenging task. In this study, the stochastic effects (LER and stochastic defect generation) of chemically amplified resist processes in the sub-10-nm-half-pitch node were investigated, assuming the use of extreme ultraviolet (EUV) lithography. The latent images were calculated by a Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. 7-nm-half-pitch fabrication by chemically amplified resist processes is considered to be feasible. However, significant improvement in the efficiencies of the conversion processes from optical images to resist images is required.

  16. 1060nm VCSEL for inter-chip optical interconnection

    NASA Astrophysics Data System (ADS)

    Takaki, Keishi; Imai, Suguru; Kamiya, Shinichi; Shimizu, Hitoshi; Kawakita, Yasumasa; Hiraiwa, Koji; Takagi, Tomohiro; Shimizu, Hiroshi; Yoshida, Junji; Ishikawa, Takuya; Tsukiji, Naoki; Kasukawa, Akihiko

    2011-03-01

    The demand for the on board intra-chip optical interconnection as the "Green interconnect" have been growing so rapidly in order to catch up the speed of the performance development of high performance computing systems. In this report, our continuous study results expanding to intra-chip application in terms with power consumption and reliability are shown for the "Green" 1060nm VCSEL arrays developed by Furukawa Electric1. As the basic performance level, the clear eye opening up to 20Gbps was achieved with low power dissipation level of 160fJ/bit with voltage swing level of 130mVpp. This value would be considered as the same level of the 140fJ/bit in 10Gbps operation with 75mVpp. In the reliability test, our large scale FIT rate test had been reached up to 7.8E7 device hours and the estimated FIT rate of 30FIT/ch was obtained from no failure sample and confidence level of 90%. Our wear-out study was performed with high stress test of 170°C ambient temperature and estimated failure rate for 10years service time was 0.3FIT/ch for this mode. Our 1060nm VCSEL with low power consumption level of 140fJ/bit and high reliability of 30FIT/ch would be projected to a light source for intra-chip application.

  17. Solar polarimetry through the K I lines at 770 nm

    NASA Astrophysics Data System (ADS)

    Quintero Noda, C.; Uitenbroek, H.; Katsukawa, Y.; Shimizu, T.; Oba, T.; Carlsson, M.; Orozco Suárez, D.; Ruiz Cobo, B.; Kubo, M.; Anan, T.; Ichimoto, K.; Suematsu, Y.

    2017-09-01

    We characterize the K I D1 & D2 lines in order to determine whether they could complement the 850 nm window, containing the Ca II infrared triplet lines and several Zeeman sensitive photospheric lines, that was studied previously. We investigate the effect of partial redistribution on the intensity profiles, their sensitivity to changes in different atmospheric parameters, and the spatial distribution of Zeeman polarization signals employing a realistic magnetohydrodynamic simulation. The results show that these lines form in the upper photosphere at around 500 km, and that they are sensitive to the line-of-sight velocity and magnetic field strength at heights where neither the photospheric lines nor the Ca II infrared lines are. However, at the same time, we found that their sensitivity to the temperature essentially comes from the photosphere. Then, we conclude that the K I lines provide a complement to the lines in the 850 nm window for the determination of atmospheric parameters in the upper photosphere, especially for the line-of-sight velocity and the magnetic field.

  18. High index fluoride materials for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Nawata, T.; Inui, Y.; Masada, I.; Nishijima, E.; Satoh, H.; Fukuda, T.

    2006-03-01

    We tried to investigate various kinds of metal fluoride materials which have higher gravity than CaF II and cubic crystal system, and we found out barium lithium fluoride (BaLiF 3) and potassium yttrium fluoride (KY 3F 10) as candidates for the last lens material. We have developed unique Czochralski (CZ) machines and techniques for the growth of large calcium fluoride single crystals. And we applied these technologies to the growth of fluoride high index materials. We have succeeded to grow the large BaLiF 3 single crystal with 120mm in diameter and a KY 3F 10 single crystal, and measured their basic properties such as refractive index, VUV transmittance, birefringence, and so on. As a result of our basic research, we found out that BaLiF 3 single crystal is transparent at VUV region, and the refractive index at 193nm is 1.64, and KY 3F 10 single crystal has the index of 1.59 at the wavelength of 193nm which is slightly higher than fused silica. We expect that these fluoride high index materials are useful for the last lens material of the next generation immersion lithography.

  19. Solid sampling with 193-nm excimer laser ablation

    NASA Astrophysics Data System (ADS)

    Delmdahl, Ralph

    2007-02-01

    Reproducible and sensitive elemental analysis of solid samples is a crucial task in areas of geology (e.g. microanalysis of fluid inclusions), material sciences, industrial quality control as well as in environmental, forensic and biological studies. To date the most versatile detection method is mass-spectroscopic multi-element analysis. In order to obtain reproducible results, this requires transferring the solid sample into the gas-phase while preserving the sample's stoichiometric composition. Laser ablation in combination with Inductively Coupled Plasma-Mass Spectrometry (LA-ICP-MS) is a proven powerful technique to meet the requirements for reliable solid sample analysis. The sample is laser ablated in an air-tight cell and the aerosol is carried by an inert gas to a micro-wave induced plasma where its constituents are atomized and ionized prior to mass analysis. The 193 nm excimer laser ablation, in particular, provides athermal sample ablation with very precise lateral ablation and controlled depth profiling. The high photon energy and beam homogeneity of the 193 nm excimer laser system avoids elemental fractionation and permits clean ablation of even transmissive solid materials such as carbonates, fluorites and pure quartz.

  20. Unknown Bands Observed in the 266 NM Photolysis of Iodomethanes

    NASA Astrophysics Data System (ADS)

    Du, Jia-Jen; Chen, Chia-Hsin; Chang, Bor-Chen

    2012-06-01

    Unknown bands that were not seen in the nascent emission spectra following the near-UV photolysis of bromomathanes (CHBr3-nCl_n, n= 0, 1, 2 and CH_2Br_2) were observed in the 520-820 nm region of the nascent emission spectra following the 266 nm photolysis of iodomethanes (CHI_3, CH_2I_2, and CH_3I) in a slow flow system at ambient temperature. We have dramatically improved the signal-to-noise (S/N) ratios of these unknown bands for further data analyses. Pressure dependence and temporal waveforms of the unknown bands were also recorded. The analyses show that these bands have the vibrational intervals of roughly 400 cm-1 and possibly originate from the same upper level with emission to different lower levels. Moreover, the nascent emission spectra of photolyzing the deuterated or 13C-substituted isotopomers (CD_2I_2, CD_3I, and 13CH_2I_2) were also acquired, and the results indicate that the carrier molecule probably does not contain any hydrogen or carbon atoms. Our current progress will be presented. S.-X. Yang, G.-Y. Hou, J.-H. Dai, C-.H. Chang, and B.-C. Chang, J. Phys. Chem. A 114, 4785 (2010) C.-N. Liu, H.-F. Liao, G.-Y. Hou, S-.X. Yang, and B.-C. Chang, 65 OSU International Symposium on Molecular Spectroscopy, MI10 (2010).

  1. Challenges and solutions for trench lithography beyond 65nm node

    NASA Astrophysics Data System (ADS)

    Lu, Zhijian; Ho, Chi-Chien; Mason, Mark; Anderson, Andrew; Mckee, Randy; Jackson, Ricky; Zhu, Cynthia; Terry, Mark

    2006-03-01

    Due to complex interconnect wiring scheme and constraints from process rules, systematic defects such as pattern necking and bridging are a major concern for metal layers. These systematic defects or "weak spots" can be major yield detractors in IC manufacturing if not properly addressed. These defects can occur even in cases where model-based OPC has been implemented, as well as a variety of process rules for margin insurance. Determining how to improve the marginalities or "weak spots" becomes a key factor for enhancing product yields. This paper will address several root causes for pattern induced defects and present solutions to a variety of weak spots including "T-shape," "H-shape," "Thin-Line," and "Bowling Pin" defects during 65nm product development at TI. Through case studies, we demonstrate how to successfully provide DFM (Design for Manufacturing) by using Resolution Enhancement Techniques (RET) tools to avoid and minimize the weak spots. Furthermore, process techniques to improve printability for some of the weak spots as applied to 65nm reticle sets will be discussed. An integrated scheme aiming at optimization of design rules and process rules is proposed.

  2. Spin-on organic hardmask materials in 70nm devices

    NASA Astrophysics Data System (ADS)

    Oh, Chang-Il; Uh, Dong-Seon; Kim, Do-Hyeon; Lee, Jin-Kuk; Yun, Hui-Chan; Nam, Irina; Kim, Min-Soo; Yoon, Kyong-Ho; Hyung, Kyung-Hee; Tokareva, Nataliya; Cheon, Hwan-Sung; Kim, Jong-Seob; Chang, Tu-Won

    2007-03-01

    In ArF lithography for < 90nm L/S, amorphous carbon layer (ACL) deposition becomes inevitable process because thin ArF resist itself can not provide suitable etch selectivity to sub-layers. One of the problems of ACL hardmask is surface particles which are more problematic in mass production. Limited capacity, high cost-of-ownership, and low process efficiency also make ACL hardmask a dilemma which can not be ignored by device makers. One of the answers to these problems is using a spin-on organic hardmask material instead of ACL hardmask. Therefore, several processes including bi-layer resist process (BLR), tri-layer resist process (TLR), and multi-layer resist process (MLR) have been investigated. In this paper, we have described spin-on organic hardmask materials applicable to 70nm memory devices. Applications to tri-layer resist process (TLR) were investigated in terms of photo property, etch property and process compatibility. Based on the test results described in this paper, our spin-on hardmask materials are expected to be used in mass production.

  3. Pressure Broadening of the Cadmium 326.1 nm Line

    NASA Astrophysics Data System (ADS)

    Roston, G. D.; Helmi, M. S.

    2014-11-01

    The temperature dependence of the Cd line absorption profile at 326.1nm perturbed by inert gases (Xe, Kr, Ar, Ne and He) has been carefully studied over a wide spectral range in both blue and red wings using a high-resolution double-beam spectrometer. The atomic densities of inert gases (Ngas) and cadmium (NCd) was sufficient to study the wing of the Cd line at 326.1nm. The temperature dependence of the studied line profile was analyzed in the framework of the quasi-static theory. The van der Waals coefficient differences (ΔC60 and ΔC61) between the ground X0+ state and the two excited states A30+ and B31 were obtained from the near red wing profile using Kuhn's law. All the results of the well depths with their positions for the ground (X0+), and the excited (31, 30+) were determined. The obtained results are compared with the corresponding theoretical and experimental molecular beam experiments results.

  4. Customized illumination shapes for 193nm immersion lithography

    NASA Astrophysics Data System (ADS)

    Ling, Moh Lung; Chua, Gek Soon; Lin, Qunying; Tay, Cho Jui; Quan, Chenggen

    2008-03-01

    In this paper, a study on customized illumination shape configurations as resolution enhancement for 45nm technology node will be presented. Several new source shape configurations will be explored through simulation based on 193nm immersion lithography on 6% Attenuated Phase Shift Mask. Forbidden pitch effect is commonly encountered in the application of off axis illumination (OAI). The illumination settings are often optimized to allow maximum process window for a pitch. This is done by creating symmetrical distribution of diffraction order on the pupil plane. However, at other pitch, the distribution of diffraction order on the pupil plane results in severe degradation in image contrast and results in significant critical dimension (CD) fluctuation. The problematic pitch is often known as forbidden pitch. It has to be avoided in the design and thus limited the pitch range to be imaged for particular illumination. An approach to modify off axis illumination to minimize the effect of forbidden pitch is explored in this study. The new customized shape for one dimensional line and space pattern is modified from current off axis illumination. Simulation study is done to evaluate the performance some customized shapes. The extent of CD fluctuation and CD through pitch uniformity is analyzed to determine the performance enhancement of the new illumination shapes. From simulation result, the proposed modification have significantly improved the through pitch performance and minimized the effect of forbidden pitch.

  5. Electrical properties of sub-100 nm SiGe nanowires

    NASA Astrophysics Data System (ADS)

    Hamawandi, B.; Noroozi, M.; Jayakumar, G.; Ergül, A.; Zahmatkesh, K.; Toprak, M. S.; Radamson, H. H.

    2016-10-01

    In this study, the electrical properties of SiGe nanowires in terms of process and fabrication integrity, measurement reliability, width scaling, and doping levels were investigated. Nanowires were fabricated on SiGe-on oxide (SGOI) wafers with thickness of 52 nm and Ge content of 47%. The first group of SiGe wires was initially formed by using conventional I-line lithography and then their size was longitudinally reduced by cutting with a focused ion beam (FIB) to any desired nanometer range down to 60 nm. The other nanowire group was manufactured directly to a chosen nanometer level by using sidewall transfer lithography (STL). It has been shown that the FIB fabrication process allows manipulation of the line width and doping level of nanowires using Ga atoms. The resistance of wires thinned by FIB was 10 times lower than STL wires which shows the possible dependency of electrical behavior on fabrication method. Project support by the Swedish Foundation for Strategic Research “SSF” (No. EM-011-0002) and the Scientific and Technological Research Council of Turkey (No. TÜBİTAK).

  6. Quality metric for accurate overlay control in <20nm nodes

    NASA Astrophysics Data System (ADS)

    Klein, Dana; Amit, Eran; Cohen, Guy; Amir, Nuriel; Har-Zvi, Michael; Huang, Chin-Chou Kevin; Karur-Shanmugam, Ramkumar; Pierson, Bill; Kato, Cindy; Kurita, Hiroyuki

    2013-04-01

    The semiconductor industry is moving toward 20nm nodes and below. As the Overlay (OVL) budget is getting tighter at these advanced nodes, the importance in the accuracy in each nanometer of OVL error is critical. When process owners select OVL targets and methods for their process, they must do it wisely; otherwise the reported OVL could be inaccurate, resulting in yield loss. The same problem can occur when the target sampling map is chosen incorrectly, consisting of asymmetric targets that will cause biased correctable terms and a corrupted wafer. Total measurement uncertainty (TMU) is the main parameter that process owners use when choosing an OVL target per layer. Going towards the 20nm nodes and below, TMU will not be enough for accurate OVL control. KLA-Tencor has introduced a quality score named `Qmerit' for its imaging based OVL (IBO) targets, which is obtained on the-fly for each OVL measurement point in X & Y. This Qmerit score will enable the process owners to select compatible targets which provide accurate OVL values for their process and thereby improve their yield. Together with K-T Analyzer's ability to detect the symmetric targets across the wafer and within the field, the Archer tools will continue to provide an independent, reliable measurement of OVL error into the next advanced nodes, enabling fabs to manufacture devices that meet their tight OVL error budgets.

  7. Efficient frequency doubling at 776 nm in a ring cavity

    NASA Astrophysics Data System (ADS)

    Han, Zhen-Hai; Liu, Shi-Long; Liu, Shi-Kai; Ding, Dong-Sheng; Zhou, Zhi-Yuan

    2017-08-01

    We report efficient frequency doubling (FD) at 776 nm using periodically poled LiNbO3 (PPLN) in a ring cavity pumped by a commercial erbium-doped fiber amplifier (EDFA) operating at 1552 nm. Two sets of input couplers are used that have been optimized to operate in the low pump and high pump regimes. The maximum conversion efficiencies measured for these couplers are 65.8% (transmittance T=4.5%) and 65.9% (T=9.1%). The internal conversion efficiencies are 85.0% and 88.2%, respectively, after the mode-matching efficiency and filtering transmittance have been taken into account. The maximum output powers obtained for the two couplers are 333 mW and 602 mW at pump powers of 535 mW and 999 mW, respectively. Coupling efficiency of more than 80% to single mode fibers indicates the high beam quality of the FD laser. This FD laser will be useful for quantum optics experiments in the telecommunications band and atomic physics experiments.

  8. Fabrication of 70nm split ring resonators by nanoimprint lithography

    NASA Astrophysics Data System (ADS)

    Sharp, Graham J.; Khokhar, Ali Z.; Johnson, Nigel P.

    2012-05-01

    We report on the fabrication of 70 nm wide, high resolution rectangular U-shaped split ring resonators (SRRs) using nanoimprint lithography (NIL). The fabrication method for the nanoimprint stamp does not require dry etching. The stamp is used to pattern SRRs in a thin PMMA layer followed by metal deposition and lift-off. Nanoimprinting in this way allows high resolution patterns with a minimum feature size of 20 nm. This fabrication technique yields a much higher throughput than conventional e-beam lithography and each stamp can be used numerous times to imprint patterns. Reflectance measurements of fabricated aluminium SRRs on silicon substrates show a so-called an LC resonance peak in the visible spectrum under transverse electric polarisation. Fabricating the SRRs by NIL rather than electron beam lithography allows them to be scaled to smaller dimensions without any significant loss in resolution, partly because pattern expansion caused by backscattered electrons and the proximity effect are not present with NIL. This in turn helps to shift the magnetic response to short wavelengths while still retaining a distinct LC peak.

  9. Photofragment Translational Spectroscopy of Propargyl Radicals at 248 nm

    SciTech Connect

    Goncher, S.J.; Moore, D.T.; Sveum, N.E.; Neumark, D.M.

    2007-12-21

    The photodissociation of propargyl radical, C{sub 3}H{sub 3}, and its perdeuterated isotopolog was investigated using photofragment translational spectroscopy. Propargyl radicals were produced by 193 nm photolysis of allene entrained in a molecular beam expansion, and then photodissociated at 248 nm. photofragment time-of-flight spectra were measured at a series of laboratory angles using electron impact ionization coupled to a mass spectrometer. Data for ion masses corresponding to C{sub 3}H{sub 2}{sup +}, C{sub 3}H{sup +}, C{sub 3}{sup +}, and the analogous deuterated species show that both H and H{sub 2} loss occur. The translational energy distributions for these processes have average values = 5.7 and 15.9 kcal/mol, respectively, and are consistent with dissociation on the ground state following internal conversion, with no exit barrier for H loss but a tight transition state for H{sub 2} loss. The translational energy distribution for H atom loss is similar to that in previous work on propargyl in which the H atom, rather than the heavy fragment, was detected. The branching ratio for H loss/H{sub 2} loss was determined to be 97.6/2.4 {+-} 1.2, in good agreement with RRKM results.

  10. 946 nm Diode Pumped Laser Produces 100mJ

    NASA Technical Reports Server (NTRS)

    Axenson, Theresa J.; Barnes, Norman P.; Reichle, Donald J., Jr.

    2000-01-01

    An innovative approach to obtaining high energy at 946 nm has yielded 101 mJ of laser energy with an optical-to-optical slope efficiency of 24.5%. A single gain module resonator was evaluated, yielding a maximum output energy of 50 mJ. In order to obtain higher energy a second gain module was incorporated into the resonator. This innovative approach produced un-surprised output energy of 101 mJ. This is of utmost importance since it demonstrates that the laser output energy scales directly with the number of gain modules. Therefore, higher energies can be realized by simply increasing the number of gain modules within the laser oscillator. The laser resonator incorporates two gain modules into a folded "M-shaped" resonator, allowing a quadruple pass gain within each rod. Each of these modules consists of a diode (stack of 30 microlensed 100 Watt diode array bars, each with its own fiber lens) end-pumping a Nd:YAG laser rod. The diode output is collected by a lens duct, which focuses the energy into a 2 mm diameter flat to flat octagonal pump area of the laser crystal. Special coatings have been developed to mitigate energy storage problems, including parasitic lasing and amplified spontaneous emission (ASE), and encourage the resonator to operate at the lower gain transition at 946 nm.

  11. 1125-nm quantum dot laser for tonsil thermal therapy

    NASA Astrophysics Data System (ADS)

    McMillan, Kathleen

    2011-03-01

    Thermal therapy has the potential to provide a nonexcisional alternative to tonsillectomy. Clinical implementation requires that the lymphoid tissue of tonsils is heated homogeneously to produce an amount of primary thermal injury that corresponds to gradual postoperative tonsil shrinkage, with minimal risk of damage to underlying critical blood vessels. Optical constants are derived for tonsils from tissue components and used to calculate the depth of 1/e of irradiance. The 1125 nm wavelength is shown to correspond to both deep penetration and minimal absorption by blood. A probe for tonsil thermal therapy that comprises two opposing light emitting, temperature controlled surfaces is described. For ex vivo characterization of tonsil heating, a prototype 1125 nm diode laser is used in an experimental apparatus that splits the laser output into two components, and delivers the radiation to sapphire contact window surfaces of two temperature controlled cells arranged to irradiate human tonsil specimens from opposing directions. Temperatures are measured with thermocouple microprobes at located points within the tissue during and after irradiation. Primary thermal damage corresponding to the recorded thermal histories are calculated from Arrhenius parameters for human tonsils. Results indicate homogeneous heating to temperatures corresponding to the threshold of thermal injury and above can be achieved in advantageously short irradiation times.

  12. En-face OCT system at 1060 nm

    NASA Astrophysics Data System (ADS)

    Neagu, Liviu; Lobo Ribeiro, Antonio B.; Cucu, Radu G.; Bradu, Adrian; Ma, Lisha; Podoleanu, Adrian G.

    2008-09-01

    A highly efficient power optical coherence tomography configuration is implemented using a Multiwave Photonics broadband source centred at 1060 nm wavelength, FWHM = 50 nm and a Mach Zehnder interferometer. The interferometer contains a fibre acousto-optic modulator in each arm. One is driven at a fixed frequency of 40 MHz while the other via an RF Function Generation. In this way, the en-face OCT signal is modulated on a carrier frequency adjustable in the range 0 kHz to 1.5 MHz. A circulator is placed in the sample arm. Light retroreflected from the sample is sent via the circulator to a balanced coupler where it interferes with the reference beam. A translation stage is used in the reference arm to adjust the optical path difference in the interferometer. The result is photodetected using two InGaAs photodetectors followed by a differential amplifier in a balance detection configuration The system has been used to acquire en-face images as well as cross section optical coherence tomography images from skin and embryos based on T-scans (transversal reflectivity profiles).

  13. 1060nm 28-Gbps VCSEL developed at Furukawa

    NASA Astrophysics Data System (ADS)

    Suzuki, Toshihito; Funabashi, Masaki; Shimizu, Hitoshi; Nagashima, Kazuya; Kamiya, Shinichi; Kasukawa, Akihiko

    2014-02-01

    This paper presents recent development results of our 28-Gbps VCSELs featured with double intra-cavity structure and a lasing wavelength of 1060 nm. The double intra-cavity realizes very low cavity loss due to undoped semiconductor bottom DBR and dielectric top DBR layers. Compressively strained InGaAs MQW provides high differential gain that contributes to low power consumption and high reliability. Based on our 10-Gbps VCSEL structure, we carefully optimized MQW, selective oxide structure, cavity length, and doping profile in order to achieve high speed operation while maintaining high reliability and other laser performances. The developed VCSELs exhibit modulation 3 dB-bandwidth exceeding 20 GHz and D-factor of 10 GHz/(mA)1/2. Typical threshold current and slope efficiency are 0.5 mA and 0.5 W/A, respectively. The paper also discusses static and dynamic characteristics of VCSELs with various oxide aperture sizes simultaneously fabricated on the same wafer. For a longer transmission distance and better optical coupling to a multimode fiber, optical lateral confinement is precisely controlled to reduce spectral width as well as far-field pattern. Clearly opened eye diagrams are obtained at a bit rate of 28 Gbps. Bit error rate tests are also performed and 28 Gbps error free transmission has been confirmed over 300 meters of multimode-fiber optimized for 1060 nm with a PRBS pattern length of 231-1.

  14. Alternating phase shift mask technology for 65nm logic applications

    NASA Astrophysics Data System (ADS)

    Chakravorty, Kishore K.; Henrichs, Sven; Qiu, Wei; Chavez, Joas L.; Liu, Yi-Ping; Ghadiali, Firoz; Yung, Karmen; Wilcox, Nathan; Silva, Mary; Ma, Jian; Qu, Ping; Irvine, Brian; Yun, Henry; Cheng, Wen-Hao; Farnsworth, Jeff

    2006-03-01

    Alternating Phase Shift Mask (APSM) Technology has been developed and successfully implemented for the poly gate of 65nm node Logic application at Intel. This paper discusses the optimization of the mask design rules and fabrication process in order to enable high volume manufacturability. Intel's APSM technology is based on a dual sided trenched architecture. To meet the stringent OPC requirements associated with patterning of narrow gates required for the 65nm node, Chrome width between the Zero and Pi aperture need to be minimized. Additionally, APSM lithography has an inherently low MEEF that furthermore, drives a narrower Chrome line as compared to the Binary approach. The double sided trenched structure with narrow Chrome lines are mechanically vulnerable and prone to damage when exposed to conventional mask processing steps. Therefore, new processing approaches were developed to minimize the damage to the patterned mask features. For example, cleaning processes were optimized to minimize Chrome & quartz damage while retaining the cleaning effectiveness. In addition, mask design rules were developed which ensured manufacturability. The narrow Chrome regions between the zero and Pi apertures severely restrict the tolerance for the placement of the second level resists edges with respect to the first level. UV Laser Writer based resist patterning capability, capable of providing the required Overlay tolerance, was developed, An AIMS based methodology was used to optimize the undercut and minimize the aerial image CD difference between the Zero and Pi apertures.

  15. Evaluation of fluorinated dissolution inhibitors for 157-nm lithography

    NASA Astrophysics Data System (ADS)

    Hamad, Alyssandrea H.; Houlihan, Francis M.; Seger, Larry; Chang, Chun; Ober, Christopher K.

    2003-06-01

    Fluorinated diesters were synthesized and evaluated as dissolution inhibitors (DIs) for 157 nm lithography. The results of dissolution rate measurements, exposure studies, and etching experiments on blends of fluorinated polymers containing these dissolution inhibitors are reported. It was shown that the DIs effectively slow the dissolution rate of the matrix polymer, poly(hexafluorohydroxyisopropyl styrene) (PHFHIPS). Etching studies show that they enhance the plasma etch resistance of poly(methyl methacrylate) using tetrafluoromethane plasma. Addition of the best performing dissolution inhibitor, cyclohexane-1,4-dicarboxylic acid bis-(1-cyclohexyl-2,2,2-trifluoro-1-methyl-ethyl) ester) (FCDE1) to candidate 157 nm photoresist polymers, Duvcor and poly(hexafluorohydroxyisopropyl styrene)-co-poly(t-butyl methacrylate) [pPHFHIPS-co-pt-BMA], improves the imaging behavior of these polymers. Our attempts to elucidate the mechanism of dissolution inhibition for this series of compounds will be discussed. Fourier Transform Infrared (FTIR) studies in conjunction with dissolution rate measurements performed on a series of DI analogues suggest a mechanism based on hydrogen bonding.

  16. Mapping stress in polycrystals with sub-10 nm spatial resolution.

    PubMed

    Polop, C; Vasco, E; Perrino, A P; Garcia, R

    2017-07-07

    From aircraft to electronic devices, and even in Formula One cars, stress is the main cause of degraded material performance and mechanical failure in applications incorporating thin films and coatings. Over the last two decades, the scientific community has searched for the mechanisms responsible for stress generation in films, with no consensus in sight. The main difficulty is that most current models of stress generation, while atomistic in nature, are based on macroscopic measurements. Here, we demonstrate a novel method for mapping the stress at the surface of polycrystals with sub-10 nm spatial resolution. This method consists of transforming elastic modulus maps measured by atomic force microscopy techniques into stress maps via the local stress-stiffening effect. The validity of this approach is supported by finite element modeling simulations. Our study reveals a strongly heterogeneous distribution of intrinsic stress in polycrystalline Au films, with gradients as high as 100 MPa nm(-1) near the grain boundaries. Consequently, our study discloses the limited capacity of macroscopic stress assessments and standard tests to discriminate among models, and the great potential of nanometer-scale stress mapping.

  17. 240 nm UV LEDs for LISA test mass charge control

    NASA Astrophysics Data System (ADS)

    Olatunde, Taiwo; Shelley, Ryan; Chilton, Andrew; Serra, Paul; Ciani, Giacomo; Mueller, Guido; Conklin, John

    2015-05-01

    Test Masses inside the LISA Gravitational Reference Sensor must maintain almost pure geodesic motion for gravitational waves to be successfully detected. LISA requires residual test mass accelerations below 3 fm/s2/√Hz at all frequencies between 0.1 and 3 mHz. One of the well-known noise sources is associated with the charges on the test masses which couple to stray electrical potentials and external electromagnetic fields. LISA Pathfinder will use Hg-discharge lamps emitting mostly around 254 nm to discharge the test masses via photoemission in its 2015/16 flight. A future LISA mission launched around 2030 will likely replace the lamps with newer UV-LEDs. Presented here is a preliminary study of the effectiveness of charge control using latest generation UV-LEDs which produce light at 240 nm with energy above the work function of pure Au. Their lower mass, better power efficiency and small size make them an ideal replacement for Hg lamps.

  18. 1550-nm nonablative laser resurfacing for facial surgical scars.

    PubMed

    Pham, Annette M; Greene, Ryan M; Woolery-Lloyd, Heather; Kaufman, Joely; Grunebaum, Lisa D

    2011-01-01

    To investigate the efficacy of 1550-nm (Fraxel SR1500 RE:Store; Solta Medical, Hayward, California) nonablative laser treatment of facial surgical scars. In this prospective clinical study, a volunteer sample of 13 adults with Fitzpatrick skin types I to III and facial surgical scars with a postoperative duration longer than 6 months were enrolled. Subjects were treated once every 4 weeks for a total of 4 treatments. Initial settings for the 1550-nm nonablative laser were at energy level 40 mJ and treatment level 4 and were subsequently increased on each visit according to the patients' tolerance level. Using a previously validated Patient and Observer Scar Assessment Scale (POSAS), the study subject and an independent evaluator completed assessments of the scar at each visit. According to the Friedman test on ratings across all occasions after the first treatment to the last evaluation, there was a statistically significant improvement in the patient's assessment of the color, stiffness, thickness, and irregularity of the scar but not for pain or itching. For the observer's ratings, there was a statistically significant improvement in pigmentation, thickness, relief, and pliability but not for vascularization. Preliminary data suggest improved aesthetic results, demonstrating the potential use of fractional photothermolysis as a scar revision technique. Future studies with a longer follow-up period could elucidate the role of fractional photothermolysis in more permanent scar improvements.

  19. Phame: phase measurements on 45nm node phase shift features

    NASA Astrophysics Data System (ADS)

    Buttgereit, Ute; Birkner, Robert; Seidel, Dirk; Perlitz, Sascha; Philipsen, Vicky; De Bisschop, Peter

    2008-05-01

    The extension of optical lithography to the 45nm node and beyond goes along with increased mask complexity and tightening of specifications. The proper use of PSM becomes more and more important and the phase shift needs to be quantified exactly in order to achieve accurate CD printing results during wafer processing. The methods currently available run into limitations because they are not able to consider diffraction limitations caused by scanner NA and mask pitch, as well as 3D mask effects. In the transition to the 45nm node and beyond, these effects play an important role and need to be considered. Zeiss' new phase metrology system Phame® captures diffraction limitations, rigorous effects (i.e., a failure of the Kirchhoff approximation), and polarization effects. The new phase metrology system measures the phase shift in any in-die feature of the active mask area for on- and off-axis applications with high spatial resolution. This paper is focused on through pitch and through duty cycle measurements on an alternating PSM. Phame® measurements will be compared to AFM measurements. Additionally rigorous 3D simulations have been performed for different CD, varying pitch and varying duty cycle using coherent illumination with polarization. The simulation results will be compared to Phame® measurement results.

  20. Repairing 45 nm node defects through nano-machining

    NASA Astrophysics Data System (ADS)

    White, Roy; Dinsdale, Andrew; Robinson, Tod; Brinkley, David; Csuy, Jeffrey; Lee, David

    2007-10-01

    Recently questions have been raised about whether high aspect ratio (HAR) NanoBits TM can be effectively utilized to repair extension defects in 45 nm node and beyond. The primary concern has been how the effect of NanoBit TM deflection impacts edge placement, sidewall angle and z-depth control repeatability. Higher aspect ratio bits are required for defects that arise as mask feature sizes become smaller. As the aspect ratio of the NanoBit TM continues to increase to meet these demands, the cross sectional area of the bit used for nanomachining becomes thinner and more susceptible to bending under the forces applied during the nanomachining process. This is especially true when deeper features that require HAR NanoBits TM are being repaired. To overcome this trend RAVE LLC has developed a new repair process that utilizes the strength of the bit shape. Repair of 45 nm node defects that require HAR NanoBits TM will be demonstrated using a new repair process and cantilever design.