Infrared extinction and microwave absorption properties of hybrid Fe3O4@SiO2@Ag nanospheres synthesized via a facile seed-mediated growth route.

PubMed

Chen, Yongpeng; Li, Shichuan; Wei, Xuebin; Tang, Runze; Zhou, Zunning

2018-06-21

Fe3O4@SiO2@Ag ternary hybrid nanoparticles were synthesized via a facile seed-mediated growth route. X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM) measurements were used to characterize the as-prepared product. The results indicated that the nanoparticles exhibited excellent magnetic properties and an extremely dense structure with Ag layer thicknesses of 30 nm, 40 nm, and 50 nm. Furthermore, the microwave shielding effectiveness exceeded 20 dB over almost the entire frequency range (2-18 GHz), and the effectiveness obviously improved as the thickness of the Ag layer increased. In addition, the IR extinction coefficient of the nanoparticles was calculated by a finite-difference time-domain (FDTD) method, which showed that the nanoparticles can inherit the extinction performance of pure silver when the Ag shell thickness was 30 nm. Specifically, after assembling into chains, the peak position of the IR extinction curves displayed a significant redshift and an intensity increase as the number of nanoparticles increased in the chain, which dramatically promoted the IR extinction capability. As a result, the Fe3O4@SiO2@Ag nanoparticles are expected to be used as a new multispectral interference material. © 2018 IOP Publishing Ltd.

Photoconductivity of Macroporous and Nonporous Silicon with Ultrathin Oxide Layers

NASA Astrophysics Data System (ADS)

Konin, K. P.; Goltvyansky, Yu. V.; Karachevtseva, L. A.; Karas, M. I.; Morozovs'ka, D. V.

2018-06-01

The photoconductivity of macroporous silicon with ultrathin oxide layers of 2.7-30 nm in thickness at short-wave optical excitation was studied. The following feature was revealed: a nonmonotonic change in the photoconductivity as a function of the oxide thickness. At a minimum thickness, the photoconductivity is negative; in the interval 6.8-15 nm, it is very much suppressed; at 15-30 nm, it is positive. Suppression of photoconductivity over a wide thickness range indicates an abnormally high concentration of traps and capture centers for charge carriers of both signs. Such a change in the photoconductivity corresponds to the known results on the continuous morphological rearrangement of the oxide in the thickness range from 6-7 nm to 12-15 nm from the coesite-like (4-membered SiO4 tetrahedra rings) to the tridymite-like (6-membered SiO4 tetrahedra rings). The suppression of photoconductivity in the intermediate range probably demonstrates the collective, antisynergetic action of these coexisting oxide forms on the nonequilibrium charge carriers. These coexisting oxide forms manifest themselves as an unusual collective defect.

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

PubMed

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy.

PubMed

Seki, Hirofumi; Yoshikawa, Masanobu; Kobayashi, Takuma; Kimoto, Tsunenobu; Ozaki, Yukihiro

2017-05-01

Fourier transform infrared (FT-IR) spectra were measured for thermal oxides with different electrical properties grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by 5 cm -1 as the oxide-layer thickness decreased to 3 nm. The blue shift of the TO mode indicates interfacial compressive stress in the oxide. Comparison of data for the oxide on a SiC substrate with that for similar oxides on a Si substrate implies that the peak shift of the TO mode at the SiO 2 /SiC interface is larger than that of SiO 2 /Si, which suggests that the interfacial stress for the oxide on the SiC substrate is larger than that on the Si substrate. For the SiO 2 /SiC interfacial region (<3 nm oxide thickness), despite the fact that the blue shift of the TO modes becomes larger while approaching the oxide/SiC interface, the peak frequency of the TO modes red-shifts at the oxide/SiC interface. The peak-frequency shift of the TO mode for the sample without post-oxidation annealing was larger than that for the samples post-annealed in a nitric oxide atmosphere. The channel mobilities are correlated with the degree of shift of the TO mode when the oxide thickness is <3 nm. It appears that the compressive stress at the SiO 2 /SiC interface generates silicon suboxide components and weakens the Si-O bonds. As the result, the TO mode was red-shifted and the oxygen deficiency increased to relax the compressive stress in the oxide with <3 nm thickness. Fourier transform infrared spectroscopy measurements provide unique and useful information about stress and inhomogeneity at the oxide/SiC interface.

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils.

PubMed

Putkonen, Matti; Sippola, Perttu; Svärd, Laura; Sajavaara, Timo; Vartiainen, Jari; Buchanan, Iain; Forsström, Ulla; Simell, Pekka; Tammelin, Tekla

2018-02-13

In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO 2 using AP-LTO® 330 and ozone (O 3 ) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO 2 film deposition rate was dependent on the temperature varying within 1.5-2.2 Å cycle -1 in the temperature range of 80-350°C, respectively. The low-temperature SiO 2 process that resulted was combined with the conventional trimethyl aluminium + H 2 O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO 2 /Al 2 O 3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO 2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO 2 /Al 2 O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m -2  d -1 to 0.15 ml m -2  d -1 , whereas the water transmission rates lowered from 630 ± 50 g m -2  d -1 down to 90 ± 40 g m -2  d -1 This article is part of a discussion meeting issue 'New horizons for cellulose nanotechnology'. © 2017 The Author(s).

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

NASA Astrophysics Data System (ADS)

Putkonen, Matti; Sippola, Perttu; Svärd, Laura; Sajavaara, Timo; Vartiainen, Jari; Buchanan, Iain; Forsström, Ulla; Simell, Pekka; Tammelin, Tekla

2017-12-01

In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO2 using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO2 film deposition rate was dependent on the temperature varying within 1.5-2.2 Å cycle-1 in the temperature range of 80-350°C, respectively. The low-temperature SiO2 process that resulted was combined with the conventional trimethyl aluminium + H2O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO2/Al2O3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO2/Al2O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m-2 d-1 to 0.15 ml m-2 d-1, whereas the water transmission rates lowered from 630 ± 50 g m-2 d-1 down to 90 ± 40 g m-2 d-1. This article is part of a discussion meeting issue `New horizons for cellulose nanotechnology'.

Misalignment tolerant efficient inverse taper coupler for silicon waveguide

NASA Astrophysics Data System (ADS)

Wang, Peng; Michael, Aron; Kwok, Chee Yee; Chen, Ssu-Han

2015-12-01

This paper describes an efficient fiber to submicron silicon waveguide coupling based on an inversely tapered silicon waveguide embedded in a SiO2 waveguide that is suspended in air. The inverse taper waveguide consist of a 50um long and 240nm thick silicon that linearly taper in width from 500nm to 120nm, which is embedded in SiO2. The SiO2 waveguide is 6um wide and 10um long. The simulation results show that the coupling loss of this new approach is 2.7dB including the interface loss at the input and output. The tolerance to fiber misalignment at the input of the coupler is 2um in both horizontal and vertical directions for only 1.5dB additional loss.

Characteristics of poly- and mono-crystalline BeO and SiO2 as thermal and cold neutron filters

NASA Astrophysics Data System (ADS)

Adib, M.; Habib, N.; Bashter, I. I.; Morcos, H. N.; El-Mesiry, M. S.; Mansy, M. S.

2015-09-01

A simple model along with a computer code "HEXA-FILTERS" is used to carry out the calculation of the total cross-sections of BeO and SiO2 having poly or mono-crystalline form as a function of neutron wavelength at room (R.T.) and liquid nitrogen (L.N.) temperatures. An overall agreement is indicated between the calculated neutron cross-sections and experimental data. Calculation shows that 25 cm thick of polycrystalline BeO cooled at liquid nitrogen temperature was found to be a good filter for neutron wavelengths longer than 0.46 nm. While, 50 cm of SiO2, with much less transmission, for neutrons with wavelengths longer than 0.85 nm. It was also found that 10 cm of BeO and 15 cm SiO2 thick mono-crystals cut along their (0 0 2) plane, with 0.5° FWHM on mosaic spread and cooled at L.N., are a good thermal neutron filter, with high effect-to-noise ratio.

Co7Fe3 and Co7Fe3@SiO2 Nanospheres with Tunable Diameters for High-Performance Electromagnetic Wave Absorption.

PubMed

Chen, Na; Jiang, Jian-Tang; Xu, Cheng-Yan; Yuan, Yong; Gong, Yuan-Xun; Zhen, Liang

2017-07-05

Ferromagnetic metal/alloy nanoparticles have attracted extensive interest for electromagnetic wave-absorbing applications. However, ferromagnetic nanoparticles are prone to oxidization and producing eddy currents, leading to the deterioration of electromagnetic properties. In this work, a simple and scalable liquid-phase reduction method was employed to synthesize uniform Co 7 Fe 3 nanospheres with diameters ranging from 350 to 650 nm for high-performance microwave absorption application. Co 7 Fe 3 @SiO 2 core-shell nanospheres with SiO 2 shell thicknesses of 30 nm were then fabricated via a modified Stöber method. When tested as microwave absorbers, bare Co 7 Fe 3 nanospheres with a diameter of 350 nm have a maximum reflection loss (RL) of 78.4 dB and an effective absorption with RL > 10 dB from 10 to 16.7 GHz at a small thickness of 1.59 mm. Co 7 Fe 3 @SiO 2 nanospheres showed a significantly enhanced microwave absorption capability for an effective absorption bandwidth and a shift toward a lower frequency, which is ascribed to the protection of the SiO 2 shell from direct contact among Co 7 Fe 3 nanospheres, as well as improved crystallinity and decreased defects upon annealing. This work illustrates a simple and effective method to fabricate Co 7 Fe 3 and Co 7 Fe 3 @SiO 2 nanospheres as promising microwave absorbers, and the design concept can also be extended to other ferromagnetic alloy particles.

Low cost ellipsometer using a standard commercial polarimeter

NASA Astrophysics Data System (ADS)

Velosa, F.; Abreu, M.

2017-08-01

Ellipsometry is an optical technique to characterize materials or phenomena that occurs at an interface or thin film between two different media. In this paper, we present an experimental low-cost version of a photometric ellipsometer, assembled with commonly found material at every Optics laboratory. The polarization parameters measurement was performed using a Thorlabs PAX5710 polarimeter. The uncertainty computed using the Guide to the Expression of Uncertainty in Measurement (GUM) procedures. With the assembled ellipsometer we were able to measure the thickness of a 10 nm thick SiO2 thin film deposited upon Si, and the complex refractive index of Gold and Tantalum samples. The SiO2 thickness we achieved had an experimental deviation of 4.5% with 2.00 nm uncertainty. The value complex refractive index of Gold and Tantalum measured agrees with the different values found in several references. The uncertainty values were found to be mostly limited by the polarimeter's uncertainty.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

PubMed

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

PubMed Central

2011-01-01

Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C. PMID:21711666

Self induced gratings in ternary SiO2:SnO2:Na2O bulk glasses by UV light seeding.

PubMed

Lancry, M; Douay, M; Niay, P; Beclin, F; Menke, Y; Milanese, D; Ferraris, M; Poumellec, B

2005-09-05

The diffraction efficiency of gratings written in ternary SnO2:SiO2:Na2O bulk glasses rises dramatically with time after the occultation of the cw 244nm light used to write the thick hologram. This self-induced behavior lasts for several hours and ultimately leads to refractive index changes as high as 3 10-3.

SiO2/ZnO Composite Hollow Sub-Micron Fibers: Fabrication from Facile Single Capillary Electrospinning and Their Photoluminescence Properties.

PubMed

Song, Guanying; Li, Zhenjiang; Li, Kaihua; Zhang, Lina; Meng, Alan

2017-02-24

In this work, SiO2/ZnO composite hollow sub-micron fibers were fabricated by a facile single capillary electrospinning technique followed by calcination, using tetraethyl orthosilicate (TEOS), polyvinylpyrrolidone (PVP) and ZnO nanoparticles as raw materials. The characterization results of the scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) spectra indicated that the asprepared composite hollow fibers consisted of amorphous SiO2 and hexagonal wurtzite ZnO. The products revealed uniform tubular structure with outer diameters of 400-500 nm and wall thickness of 50-60 nm. The gases generated and the directional escaped mechanism was proposed to illustrate the formation of SiO2/ZnO composite hollow sub-micron fibers. Furthermore, a broad blue emission band was observed in the photoluminescence (PL) of SiO2/ZnO composite hollow sub-micron fibers, exhibiting great potential applications as blue light-emitting candidate materials.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing.

PubMed

Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

2008-12-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3×10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

PubMed Central

Fu, Ming-Yue; Tsai, Jen-Hwan; Yang, Cheng-Fu; Liao, Chih-Hsiung

2008-01-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3×1016 cm−2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950–1150 °C) and duration (5–20 s). The reported approach of implanting silicon into SiO2 films followed by RTA may be effective for tuning Si-based photonic devices. PMID:27878029

Synthesis and Characterization of SiO2@Y2MoO6:Eu3+ Core-Shell Structured Spherical Phosphors by Sol-Gel Process.

PubMed

Li, G Z; Liu, F H; Chu, Z S; Wu, D M; Yang, L B; Li, J L; Wang, M N; Wang, Z L

2016-04-01

SiO2@Y2MoO6:Eu3+ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO2@Y2MoO6:Eu3+ core-shell phosphors. The XRD results demonstrated that the Y2MoO6:Eu3+ layers on the SiO2 spheres crystallized after being annealed at 700 °C and the crystallinity increased with raising the annealing temperature. The obtained core-shell phosphors have spherical shape with narrow size distribution (average size ca. 640 nm), non-agglomeration, and smooth surface. The thickness of the Y2MoO6:Eu3+ shells on the SiO2 cores could be easily tailored by varying the number of deposition cycles (70 nm for four deposition cycles). The Eul+ shows a strong PL emission (dominated by 5D0-7F2 red emission at 614 nm) under the excitation of 347 nm UV light. The PL intensity of Eu3+ increases with increasing the annealing temperature and the number of coating cycles.

Water Sorption in Electron-Beam Evaporated SiO2 on QCM Crystals and Its Influence on Polymer Thin Film Hydration Measurements.

PubMed

Kushner, Douglas I; Hickner, Michael A

2017-05-30

Spectroscopic ellipsometry (SE) and quartz crystal microbalance (QCM) measurements are two critical characterization techniques routinely employed for hydration studies of polymer thin films. Water uptake by thin polymer films is an important area of study to investigate antifouling surfaces, to probe the swelling of thin water-containing ionomer films, and to conduct fundamental studies of polymer brush hydration and swelling. SiO 2 -coated QCM crystals, employed as substrates in many of these hydration studies, show porosity in the thin electron-beam (e-beam) evaporated SiO 2 layer. The water sorption into this porous SiO 2 layer requires correction of the optical and mass characterization of the hydrated polymer due to changes in the SiO 2 layer as it sorbs water. This correction is especially important when experiments on SiO 2 -coated QCM crystals are compared to measurements on Si wafers with dense native SiO 2 layers. Water adsorption filling void space during hydration in ∼200-260 nm thick SiO 2 layers deposited on a QCM crystal resulted in increased refractive index of the layer during water uptake experiments. The increased refractive index led to artificially higher polymer swelling in the optical modeling of the hydration experiments. The SiO 2 -coated QCM crystals showed between 6 and 8% void as measured by QCM and SE, accounting for 60%-85% of the measured polymer swelling in the low humidity regime (<20% RH) and 25%-40% of the polymer swelling in the high humidity regime (>70% RH) from optical modeling for 105 and 47 nm thick sulfonated polymer films. Correcting the refractive index of the SiO 2 layer for its water content resulted in polymer swelling that successfully resembled swelling measured on a silicon wafer with nonporous native oxide.

Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

NASA Astrophysics Data System (ADS)

Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

2015-01-01

Fe3O4@SiO2-graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe3O4@SiO2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe3O4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe3O4@SiO2 NPs was 24 ± 0.3 nm, similar to that of Fe3O4@SiO2-NH2. Fe3O4@SiO2-GO composites were synthesized by linking of Fe3O4@SiO2-NH2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe3O4@SiO2-GO composite has potential applications in the production of bioethanol.

Tuning temperature and size of hot spots and hot-spot arrays.

PubMed

Saïdi, Elika; Babinet, Nicolas; Lalouat, Loïc; Lesueur, Jérôme; Aigouy, Lionel; Volz, Sébastian; Labéguerie-Egéa, Jessica; Mortier, Michel

2011-01-17

By using scanning thermal microscopy, it is shown that nanoscale constrictions in metallic microwires deposited on an oxidized silicon substrate can be tuned in terms of temperature and confinement size. High-resolution temperature maps indeed show that submicrometer hot spots and hot-spot arrays are obtained when the SiO(2) layer thickness decreases below 100 nm. When the SiO(2) thickness becomes larger, heat is less confined in the vicinity of the constrictions and laterally spreads all along the microwire. These results are in good agreement with numerical simulations, which provide dependences between silica-layer thickness and nanodot shape and temperature. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature wafer-level bonding for hermetic packaging of 3D microsystems

NASA Astrophysics Data System (ADS)

Tan, C. S.; Fan, J.; Lim, D. F.; Chong, G. Y.; Li, K. H.

2011-07-01

Metallic copper-copper (Cu-Cu) thermo-compression bonding, oxide-oxide (SiO2-SiO2) fusion bonding and silicon-silicon (Si-Si) direct bonding are investigated for potential application as hermetic seal in 3D microsystem packaging. Cavities are etched to a volume of 1.4 × 10-3 cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. In the case of metal bonding, a clean Cu layer with a thickness of 300 nm and a Ti barrier layer with an underlying thickness of 50 nm are used. The wafer pair is bonded at 300 °C under the application of a bonding force of 5500 N for 1 h. On the other hand, Si-Si bonding and SiO2-SiO2 bonding are initiated at room ambient after surface activation, followed by annealing in inert ambient at 300 °C for 1 h. The bonded cavities are stored in a helium bomb chamber and the leak rate is measured with a mass spectrometer. An excellent helium leak rate below 5 × 10-9 atm cm3 s-1 is detected for all cases and this is at least ten times better than the reject limit.

Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali

2018-06-01

The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.

AlN-based piezoelectric micromachined ultrasonic transducer for photoacoustic imaging

NASA Astrophysics Data System (ADS)

Chen, Bingzhang; Chu, Futong; Liu, Xingzhao; Li, Yanrong; Rong, Jian; Jiang, Huabei

2013-07-01

We report on the fabrication of a piezoelectric micromachined ultrasonic transducer (pMUT) and its application to photoacoustic imaging. With c-axis orientation, AlN was grown on a 300 nm-thick SiO2 film and a 200 nm-thick bottom electrode at room temperature. The device consists of SiO2, bottom electrode, AlN films, upper electrode, and polyimide protective layer. An area ratio of 0.45 was used between the upper electrode and the vibration area of the pMUT to provide an optimal sensitivity of transducer. Its resonant frequency was measured to be 2.885 MHz, and the coupling coefficient in the range of 2.38%-3.71%. The fabricated pMUT was integrated with a photoacoustic imaging system and photoacoustic image of a phantom was obtained. The resolution of the system was measured to be about 240 μm.

Core-shell structured SiO2@YVO4:Dy3+/Sm3+ phosphor particles: sol-gel preparation and characterization.

PubMed

Wang, H; Yu, M; Lin, C K; Lin, J

2006-08-01

Spherical SiO(2) particles have been coated with YVO(4):Dy(3+)/Sm(3+) phosphor layers by a Pechini sol-gel process, leading to the formation of core-shell structured SiO(2)@YVO(4):Dy(3+)/Sm(3+) particles. X-ray diffraction (XRD), Fourier-transform IR spectroscopy, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting SiO(2)@YVO(4):Dy(3+)/Sm(3+) core-shell phosphors. The obtained core-shell phosphors have perfect spherical shape with narrow size distribution (average size ca. 300 nm), smooth surface and non-agglomeration. The thickness of shells could be easily controlled by changing the number of deposition cycles (20 nm for one deposition cycle). The core-shell particles show strong characteristic emission from Dy(3+) for SiO(2)@YVO(4):Dy(3+) and from Sm(3+) for SiO(2)@YVO(4):Sm(3+) due to an efficient energy transfer from YVO(4) host to them. The PL intensity of Dy(3+) and Sm(3+) increases with raising the annealing temperature and the number of coating cycles.

Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Ohta, Akio; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi

2018-01-01

The control of chemical composition and bonding features at a SiO2/GaN interface is a key to realizing high-performance GaN power devices. In this study, an ∼5.2-nm-thick SiO2 film has been deposited on an epitaxial GaN(0001) surface by remote O2-plasma-enhanced chemical vapor deposition (O2-RPCVD) using SiH4 and Ar/O2 mixture gases at a substrate temperature of 500 °C. The depth profile of chemical structures and electronic defects of the O2-RPCVD SiO2/GaN structures has been evaluated from a combination of SiO2 thinning examined by X-ray photoelectron spectroscopy (XPS) and the total photoelectron yield spectroscopy (PYS) measurements. As a highlight, we found that O2-RPCVD is effective for fabricating an abrupt SiO2/GaN interface.

Graphene-based Nanoelectronics

DTIC Science & Technology

2011-02-01

deposition rate of 1 Å/s, 13 followed by atomic layer deposition (ALD) of aluminum oxide (Al2O3) (15 nm). The SiO2 also serves as a nucleation layer...alternating pulses of trimethylaluminum (TMA) and H2O in a Cambridge Nanotech Fiji ALD system, enabled by nucleation on the SiO2. The thicknesses of...Y.; Liu, H.-K.; Dou, S.-X. Electrodeposition of MnO2 Nanowires on Carbon Nanotube Paper as Free-standing, Flexible Electrode for Supercapacitors

Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO2 toward all-carbon electronics

NASA Astrophysics Data System (ADS)

Dong, Yibo; Xie, Yiyang; Xu, Chen; Li, Xuejian; Deng, Jun; Fan, Xing; Pan, Guanzhong; Wang, Qiuhua; Xiong, Fangzhu; Fu, Yafei; Sun, Jie

2018-02-01

A method of producing large area continuous graphene directly on SiO2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO2. Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.

A simple approach for large-area fabrication of Ag nanorings

NASA Astrophysics Data System (ADS)

Yuan, Zhi-hao; Zhou, Wei; Duan, Yue-qin; Bie, Li-jian

2008-02-01

A simple and low-cost method based on a two-step heat treatment of AgNO3/SiO2 film has been developed for fabricating metal Ag nanoring arrays. The as-prepared nanorings have an inner diameter of 70-250 nm and an average wall thickness (namely wire diameter) of approximately 30 nm with a number density of approximately 109 cm-2 on the surface of the SiO2 matrix. X-ray diffraction (XRD) results reveal that these nanorings exhibit a face-centered cubic crystal structure. Furthermore, a new growth mechanism, namely a molten metal bubble as a self-template, is tentatively proposed for Ag nanorings.

Uniform, dense arrays of vertically aligned, large-diameter single-walled carbon nanotubes.

PubMed

Han, Zhao Jun; Ostrikov, Kostya

2012-04-04

Precisely controlled reactive chemical vapor synthesis of highly uniform, dense arrays of vertically aligned single-walled carbon nanotubes (SWCNTs) using tailored trilayered Fe/Al(2)O(3)/SiO(2) catalyst is demonstrated. More than 90% population of thick nanotubes (>3 nm in diameter) can be produced by tailoring the thickness and microstructure of the secondary catalyst supporting SiO(2) layer, which is commonly overlooked. The proposed model based on the atomic force microanalysis suggests that this tailoring leads to uniform and dense arrays of relatively large Fe catalyst nanoparticles on which the thick SWCNTs nucleate, while small nanotubes and amorphous carbon are effectively etched away. Our results resolve a persistent issue of selective (while avoiding multiwalled nanotubes and other carbon nanostructures) synthesis of thick vertically aligned SWCNTs whose easily switchable thickness-dependent electronic properties enable advanced applications in nanoelectronic, energy, drug delivery, and membrane technologies.

Reflectance modulation using SiO2/TiO2 multilayer structures prepared by sol-gel spin coating process for optical applications

NASA Astrophysics Data System (ADS)

Dubey, R. S.; Ganesan, V.

2017-11-01

Passive devices made of SiO2/TiO2 bilayers have been demanded for the molding of electromagnetic waves in optical waveguides, microcavities, solar cells, sensors and so on. Here, we present the fabrication and characterization of SiO2/TiO2 multilayer structures as reflectors. The refractive indices were found to be 1.43 & 2.0 with thicknesses 230 & 70 nm corresponding to the SiO2 and TiO2 films respectively. AFM surface topography study showed little bit large surface roughness of the TiO2 as compared to SiO2 film due to its large grain size. The corresponding reflectance enhancement was noticed with the increased number of bilayers of SiO2/TiO2 films. Furthermore, six alternate layers of SiO2/TiO2 demonstrated the as much as 78% reflectance in the near-infrared wavelength range.

Electrochemical behavior of zinc particles with silica based coatings as anode material for zinc air batteries with improved discharge capacity

NASA Astrophysics Data System (ADS)

Schmid, M.; Willert-Porada, M.

2017-05-01

Silica coatings on zinc particles as anode material for alkaline zinc air batteries are expected to reduce early formation of irreversible ZnO passivation layers during discharge by controlling zinc dissolution and precipitation of supersaturated zincates, Zn(OH)42-. Zinc particles were coated with SiO2 (thickness: 15 nm) by chemical solution deposition and with Zn2SiO4 (thickness: 20 nm) by chemical vapor deposition. These coatings formed a Si(OH)4 gel in aqueous KOH and retarded hydrogen evolution by 40%. By treatment in aqueous KOH and drying afterwards, the silica coatings were changed into ZnO-K2O·SiO2 layers. In this work, the electrochemical performance of such coated zinc particles is investigated by different electrochemical methods in order to gain a deeper understanding of the mechanisms of the coatings, which reduce zinc passivation. In particular, zinc utilization and changes in internal resistance are investigated. Moreover, methods for determination of diffusion coefficients, charge carrier numbers and activation energies for electrochemical oxidation are determined. SiO2-coated zinc particles show improved discharge capacity (CVD-coated zinc: 69% zinc utilization, CSD-coated zinc: 62% zinc utilization) as compared to as-received zinc (57% zinc utilization) at C/20 rate, by reducing supersaturation of zincates. Additionally, KOH-modified SiO2-coated zinc particles enhance rechargeability after 100% depth-of-discharge.

Fabrication of SiO2@ZrO2@Y2O3:Eu3+ core-multi-shell structured phosphor.

PubMed

Gao, Xuan; He, Diping; Jiao, Huan; Chen, Juan; Meng, Xin

2011-08-01

ZrO2 interface was designed to block the reaction between SiO2 and Y2O3 in SiO2@Y2O3:Eu coreshell structure phosphor. SiO2@ZrO2@Y2O3:Eu core-multi-shell phosphors were successfully synthesized by combing an LBL method with a Sol-gel process. Based on electron microscopy, X-ray diffraction, and spectroscopy experiments, compelling evidence for the formation of the Y2O3:Eu outer shell on ZrO2 were presented. The presence of ZrO2 layer on SiO2 core can block the reaction of SiO2 core and Y2O3 shell effectively. By this kind of structure, the reaction temperature of the SiO2 core and Y2O3 shell in the SiO2@Y2O3:Eu core-shell structure phosphor can be increased about 200-300 degrees C and the luminescent intensity of this structure phosphor can be improved obviously. Under the excitation of ultraviolet (254 nm), the Eu3+ ion mainly shows its characteristic red (611 nm, 5D0-7F2) emissions in the core-multi-shell particles from Y2O3:Eu3+ shells. The emission intensity of Eu3+ ions can be tuned by the annealing temperatures, the number of coating times, and the thickness of ZrO2 interface, respectively.

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

PubMed

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Properties of Cathodoluminescence for Cryogenic Applications of SiO2-based Space Observatory Optics and Coatings

NASA Technical Reports Server (NTRS)

Evans, Amberly; Dennison, J.R.; Wilson, Gregory; Dekany, Justin; Bowers Charles W.; Meloy, Robert; Heaney, James B.

2013-01-01

Disordered thin film SiO2SiOx coatings undergoing electron-beam bombardment exhibit cathodoluminescence, which can produce deleterious stray background light in cryogenic space-based astronomical observatories exposed to high-energy electron fluxes from space plasmas. As future observatory missions push the envelope into more extreme environments and more complex and sensitive detection, a fundamental understanding of the dependencies of this cathodoluminescence becomes critical to meet performance objectives of these advanced space-based observatories. Measurements of absolute radiance and emission spectra as functions of incident electron energy, flux, and power typical of space environments are presented for thin (60-200 nm) SiO2SiOx optical coatings on reflective metal substrates over a range of sample temperatures (40-400 K) and emission wavelengths (260-5000 nm). Luminescent intensity and peak wavelengths of four distinct bands were observed in UVVISNIR emission spectra, ranging from 300 nm to 1000 nm. A simple model is proposed that describes the dependence of cathodoluminescence on irradiation time, incident flux and energy, sample thickness, and temperature.

Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si

NASA Astrophysics Data System (ADS)

Palit, Sabarni; Kirch, Jeremy; Mawst, Luke; Kuech, Thomas; Jokerst, Nan Marie

2010-02-01

We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.

KEY COMPARISON: CCQM-K32 key comparison and P84 pilot study: Amount of silicon oxide as a thickness of SiO2 on Si

NASA Astrophysics Data System (ADS)

Seah, M. P.

2008-01-01

CCQM-K32 and P84 were conducted following the pilot study P-38 to demonstrate and document the capability of interested National Metrology Institutes to measure the amount of silicon oxide on silicon wafers expressed as a thickness of SiO2 for nominal thicknesses in the range 1.5 nm to 8 nm. 'Amount of substance' may be expressed in many ways and here the measurand is the thickness of the silicon oxide layer on each of a total of 9 samples of nominal thicknesses in the range 1.5 to 8 nm on (100) and (111) Si substrates, expressed as the thickness of SiO2. This report presents the results from K32 and P84. It includes the data received for the measured values and their associated uncertainties, at 95% confidence, for the 9 samples prior to the deadline for receipt of data. The materials are grown by thermal oxidation in very clean furnaces designed for high quality gate oxides on Si wafers in European and US facilities at the same time as those for the pilot study, P-38. Separate samples were provided to each institute in special containers limiting the carbonaceous contamination to below about 0.3 nm. The 9 samples included 5 samples of ultra-thin SiO2 on (100) orientated wafers of Si and 4 samples of ultra-thin SiO2 on (111) orientated wafers of Si. The measurements from the 11 participating laboratories were conducted using ellipsometry, neutron reflectivity (NR), x-ray photoelectron spectroscopy (XPS) or x-ray reflectivity measurements (XRR), guided by the protocol developed in the pilot study P-38 and reproduced in the Appendix. The measurements are given in tables 2 and 3. A very small correction is then made for the different samples that each laboratory received as in table 4. Where appropriate, method offset values deduced from the pilot study P-38 are given in table 5 leading to comparative data in tables 6 and 7. Values for the key comparison reference values (KCRVs) and their associated uncertainties are made from the weighted means and the expanded weighted standard deviations of the means from table 6. This is provided in table 8. Graphical plots of equivalence from tables 6 and 8 are provided in figure 1 and equivalence statements are presented in Annex A. Additional XPS and XRR data from NMIJ for K32 were withdrawn from the KCRV evaluation and are given in Annex B. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCQM, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

Synthesis, characterization, and 3D-FDTD simulation of Ag@SiO2 nanoparticles for shell-isolated nanoparticle-enhanced Raman spectroscopy.

PubMed

Uzayisenga, Viviane; Lin, Xiao-Dong; Li, Li-Mei; Anema, Jason R; Yang, Zhi-Lin; Huang, Yi-Fan; Lin, Hai-Xin; Li, Song-Bo; Li, Jian-Feng; Tian, Zhong-Qun

2012-06-19

Au-seed Ag-growth nanoparticles of controllable diameter (50-100 nm), and having an ultrathin SiO(2) shell of controllable thickness (2-3 nm), were prepared for shell-isolated nanoparticle-enhanced Raman spectroscopy (SHINERS). Their morphological, optical, and material properties were characterized; and their potential for use as a versatile Raman signal amplifier was investigated experimentally using pyridine as a probe molecule and theoretically by the three-dimensional finite-difference time-domain (3D-FDTD) method. We show that a SiO(2) shell as thin as 2 nm can be synthesized pinhole-free on the Ag surface of a nanoparticle, which then becomes the core. The dielectric SiO(2) shell serves to isolate the Raman-signal enhancing core and prevent it from interfering with the system under study. The SiO(2) shell also hinders oxidation of the Ag surface and nanoparticle aggregation. It significantly improves the stability and reproducibility of surface-enhanced Raman scattering (SERS) signal intensity, which is essential for SERS applications. Our 3D-FDTD simulations show that Ag-core SHINERS nanoparticles yield at least 2 orders of magnitude greater enhancement than Au-core ones when excited with green light on a smooth Ag surface, and thus add to the versatility of our SHINERS method.

Conformal SiO2 coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition

PubMed Central

Sobel, Nicolas; Lukas, Manuela; Spende, Anne; Stühn, Bernd; Trautmann, Christina

2015-01-01

Summary Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD). The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated membranes by small angle X-ray scattering (SAXS) reveals a homogeneous, conformal layer of SiO2 in the channels at a deposition rate of 1.7–1.8 Å per ALD cycle. Characterization by infrared and X-ray photoelectron spectroscopy (XPS) confirms the stoichiometric composition of the SiO2 films. Detailed XPS analysis reveals that the mechanism of SiO2 formation is based on subsurface crystal growth. By dissolving the polymer, the silica nanotubes are released from the ion-track membrane. The thickness of the tube wall is well controlled by the ALD process. Because the track-etched channels exhibited diameters in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced. PMID:25821688

Synthesis, characterization, and thermal stability of SiO2/TiO2/CR-Ag multilayered nanostructures

NASA Astrophysics Data System (ADS)

Díaz, Gabriela; Chang, Yao-Jen; Philipossian, Ara

2018-06-01

The controllable synthesis and characterization of novel thermally stable silver-based particles are described. The experimental approach involves the design of thermally stable nanostructures by the deposition of an interfacial thick, active titania layer between the primary substrate (SiO2 particles) and the metal nanoparticles (Ag NPs), as well as the doping of Ag nanoparticles with an organic molecule (Congo Red, CR). The nanostructured particles were composed of a 330-nm silica core capped by a granular titania layer (10 to 13 nm in thickness), along with monodisperse 5 to 30 nm CR-Ag NPs deposited on top. The titania-coated support (SiO2/TiO2 particles) was shown to be chemically and thermally stable and promoted the nucleation and anchoring of CR-Ag NPs, which prevented the sintering of CR-Ag NPs when the structure was exposed to high temperatures. The thermal stability of the silver composites was examined by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Larger than 10 nm CR-Ag NPs were thermally stable up to 300 °C. Such temperature was high enough to destabilize the CR-Ag NPs due to the melting point of the CR. On the other hand, smaller than 10 nm Ag NPs were stable at temperatures up to 500 °C because of the strong metal-metal oxide binding energy. Energy dispersion X-ray spectroscopy (EDS) was carried out to qualitatively analyze the chemical stability of the structure at different temperatures which confirmed the stability of the structure and the existence of silver NPs at temperatures up to 500 °C.

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2017-01-01

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.

Role of HfO 2/SiO 2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

DOE PAGES

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; ...

2016-07-15

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

Improved dielectric properties of CaCu3Ti4O12 films with a CaTiO3 interlayer on Pt/TiO2/SiO2/Si substrates prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im

2015-11-01

We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants ( ɛ r ) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from ˜260 to ˜6000 and from ˜630 to ˜3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses ( tanδ) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model. [Figure not available: see fulltext.

Optical detection of λ-cyhalothrin by core-shell fluorescent molecularly imprinted polymers in Chinese spirits.

PubMed

Wang, Jixiang; Gao, Lin; Han, Donglai; Pan, Jianming; Qiu, Hao; Li, Hongji; Wei, Xiao; Dai, Jiangdong; Yang, Jinghai; Yao, Hui; Yan, Yongsheng

2015-03-11

In this study, fluorescent molecularly imprinted polymers (FMIPs), which were for the selective recognition and fluorescence detection of λ-cyhalothrin (LC), were synthesized via fluorescein 5(6)-isothiocyanate (FITC) and 3-aminopropyltriethoxysilane (APTS)/SiO2 particles. The SiO2@FITC-APTS@MIPs were characterized by Fourier transform infrared (FT-IR), UV-vis spectrophotometer (UV-vis), fluorescence spectrophotometer, thermogravimetric analysis (TGA), confocal laser scanning microscope (CLSM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The as-synthesized SiO2@FITC-APTS@MIPs with an imprinted polymer film (thickness was about 100 nm) was demonstrated to be spherically shaped and had good monodispersity, high fluorescence intensity, and good selective recognition. Using fluorescence quenching as the detection tool, the largest fluorescence quenching efficiency (F0/F - 1) of SiO2@FITC-APTS@MIPs is close to 2.5 when the concentration of the LC is 1.0 μM L(-1). In addition, a linear relationship (F0/F - 1= 0.0162C + 0.0272) could be obtained covering a wide concentration range of 0-60 nM L(-1) with a correlation coefficient of 0.9968 described by the Stern-Volmer equation. Moreover, the limit of detection (LOD) of the SiO2@FITC-APTS@MIPs was 9.17 nM L(-1). The experiment results of practical detection revealed that the SiO2@FITC-APTS@MIPs as an attractive recognition element was satisfactory for the determination of LC in Chinese spirits. Therefore, this study demonstrated the potential of SiO2@FITC-APTS@MIPs for the recognition and detection of LC in food.

Seed-mediated photodeposition route to Ag-decorated SiO2@TiO2 microspheres with ideal core-shell structure and enhanced photocatalytic activity

NASA Astrophysics Data System (ADS)

Ma, Jianqi; Guo, Xiaohua; Ge, Hongguang; Tian, Guanghui; Zhang, Qiang

2018-03-01

Ag-decorated SiO2@TiO2 microspheres (SiO2@TiO2-Ag) with ideal core-shell structure and enhanced photocatalytic activity were successfully fabricated by combining both coating anatase TiO2 on the surface of SiO2 spheres and subsequent depositing face-centered cubic Ag nanoparticles (NPs) on the coated TiO2 surface via novel sol-gel method and Ag-seed-mediated photodeposition (PD) route, respectively. The morphology, structure, composition and optical properties of the resulting composites were characterized in detail. The results reveal that the monodisperse SiO2 spheres of ∼260 nm were covered uniformly and perfectly by the TiO2 nanoparticle coating layer with the thickness of ca. 55 nm by the novel sol-gel method. Further, homogeneously and highly dispersed Ag NPs with an average size of 8 ± 1.5 nm were strongly anchored onto the TiO2 surface in SiO2@TiO2 core-shell spheres by the modified PD process (Ag-seed-mediated PD route), whereas polydispersed Ag aggregates and detached Ag NPs were irregularly deposited over the TiO2 surface in previous works, which is the inherent problem and has not been effectively solved for depositing noble metal NPs such as Au, Ag, Pt, Pd on TiO2 surface by conventional PD method. The formation mechanism of small and uniformly dispersed Ag NPs with narrow size distribution via the modified PD method is tentatively explained by both nucleation kinetics and growth kinetics. The key reason is that the pre-deposited seeds firmly tethered on SiO2@TiO2 spheres served as nucleation sites and anchoring points for the further nucleation and subsequent growth of Ag via photoreduction of Ag+.

Fabrication by Electrophoretic Deposition of Nano-Fe3O4 and Fe3O4@SiO2 3D Structure on Carbon Fibers as Supercapacitor Materials

NASA Astrophysics Data System (ADS)

Hajalilou, Abdollah; Abouzari-Lotf, Ebrahim; Etemadifar, Reza; Abbasi-Chianeh, Vahid; Kianvash, Abbas

2018-05-01

Core-shell nanostructured magnetic Fe3O4@SiO2 with particle size ranging from 3 nm to 40 nm has been synthesized via a facile precipitation method. Tetraethyl orthosilicate was employed as surfactant to prepare core-shell structures from Fe3O4 nanoparticles synthesized from pomegranate peel extract using a green method. X-ray diffraction analysis, Fourier-transform infrared and ultraviolet-visible (UV-Vis) spectroscopies, transmission electron microscopy, and scanning electron microscopy with energy-dispersive spectroscopy were employed to characterize the samples. The prepared Fe3O4 nanoparticles were approximately 12 nm in size, and the thickness of the SiO2 shell was 4 nm. Evaluation of the magnetic properties indicated lower saturation magnetization for Fe3O4@SiO2 powder ( 11.26 emu/g) compared with Fe3O4 powder ( 13.30 emu/g), supporting successful wrapping of the Fe3O4 nanoparticles by SiO2. As-prepared powders were deposited on carbon fibers (CFs) using electrophoretic deposition and their electrochemical behavior investigated. The rectangular-shaped cyclic voltagrams of Fe3O4@CF and Fe3O4@C@CF samples indicated electrochemical double-layer capacitor (EDLC) behavior. The higher specific capacitance of 477 F/g for Fe3O4@C@CF (at scan rate of 0.05 V/s in the potential range of - 1.13 to 0.45 V) compared with 205 F/g for Fe3O4@CF (at the same scan rate in the potential range of - 1.04 to 0.24 V) makes the former a superior candidate for use in energy storage applications.

Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry.

PubMed

Yersak, Alexander S; Lewis, Ryan J; Tran, Jenny; Lee, Yung C

2016-07-13

Reflectometry was implemented as an in situ thickness measurement technique for rapid characterization of the dissolution dynamics of thin film protective barriers in elevated water temperatures above 100 °C. Using this technique, multiple types of coatings were simultaneously evaluated in days rather than years. This technique enabled the uninterrupted characterization of dissolution rates for different coating deposition temperatures, postdeposition annealing conditions, and locations on the coating surfaces. Atomic layer deposition (ALD) SiO2 and wet thermally grown SiO2 (wtg-SiO2) thin films were demonstrated to be dissolution-predictable barriers for the protection of metals such as copper. A ∼49% reduction in dissolution rate was achieved for ALD SiO2 films by increasing the deposition temperatures from 150 to 300 °C. ALD SiO2 deposited at 300 °C and followed by annealing in an inert N2 environment at 1065 °C resulted in a further ∼51% reduction in dissolution rate compared with the nonannealed sample. ALD SiO2 dissolution rates were thus lowered to values of wtg-SiO2 in water by the combination of increasing the deposition temperature and postdeposition annealing. Thin metal films, such as copper, without a SiO2 barrier corroded at an expected ∼1-2 nm/day rate when immersed in room temperature water. This measurement technique can be applied to any optically transparent coating.

Magnetic reversal dynamics of NiFe-based artificial spin ice: Effect of Nb layer in normal and superconducting state

NASA Astrophysics Data System (ADS)

Kaur, M.; Gupta, Anurag; Varandani, D.; Verma, Apoorva; Senguttuvan, T. D.; Mehta, B. R.; Budhani, R. C.

2017-11-01

Square arrays of artificial spin ice (ASI) constituting weakly interacting NiFe nano-islands, with length ˜312 nm, width ˜125 nm, thickness ˜20 nm, and lattice constant ˜570 nm, were fabricated on Nb thin film and on thermally grown 300 nm SiO2 on silicon. Detailed investigations of magnetic force microscopy (MFM) at room temperature, and magnetization M(H) loops and relaxation of remanent magnetization (Mr) at various temperatures were carried out in two in-plane field geometries, namely, parallel ("P"-parallel to the square lattice) and diagonal ("D"- 45° to the square lattice). The magnetic response of the ASI samples shows striking difference for insulating (SiO2), metallic (Nb, T > 6.6 K) and superconducting (Nb, T < 6.6 K) bases, and the field geometry. For instance, with the Nb base in the normal metallic state (T > 6.6 K), (1) in "P" geometry the M(H) loops are found to be more "S" shaped in comparison with that for SiO2 base; (2) the ratio of magnetic vertex population of Type II to Type III vertices extracted from MFM studies in "P"("D") geometry is ˜1:1.1(1.2:1) that changed for the SiO2 base to ˜2.1:1 (4: 1). However, the NiFe-ASI on both metallic Nb and SiO2 bases exhibit a highly athermal decay of magnetization, and the % change in Mr in about two hours at T = 10 K (300 K) lies in a range of ˜1.07-1.80 (0.25-0.62). With Nb base in superconducting state (T < 6.6 K), the M(H) loops not only look radically different from those with SiO2 and metallic Nb as bases but also show significant difference in "P" and "D" geometries. These results are discussed in terms of inter-island magnetostatic energy as influenced by field geometry, presence of metallic Nb base and competing vortex pinning energy of superconducting Nb base.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Hollow Rodlike MgF2 with an Ultralow Refractive Index for the Preparation of Multifunctional Antireflective Coatings.

PubMed

Bao, Lei; Ji, Zihan; Wang, Hongning; Chen, Ruoyu

2017-06-27

Antireflective coatings with superhydrophobic, self-cleaning, and wide-spectrum high-transmittance properties and good mechanical strength have important practical value. In this research, hollow nanorod-like MgF 2 sols with different void volumes were prepared by a template-free solvothermal method to further obtain hollow nanorod-like MgF 2 crystals with an ultralow refractive index of 1.14. Besides, a MgF 2 coating with an adjustable refractive index of 1.10-1.35 was also prepared by the template-free solvothermal method. Then through the combination of base/acid two-step-catalyzed TEOS and hydroxyl modification on the surface of nanosilica spheres, the SiO 2 coating with good mechanical strength, a flat surface, and a refractive index of 1.30-1.45 was obtained. Double-layer broadband antireflective coatings with an average transmittance of 99.6% at 400-1400 nm were designed using the relevant optical theory. After the coating thickness was optimized by the dip-coating method, the double-layer antireflective coatings, whose parameters were consistent with those designed by the theory, were obtained. The bottom layer was a SiO 2 coating with a refractive index of 1.34 and a thickness of 155 nm, and the top layer was a hollow rodlike MgF 2 coating with a refractive index of 1.10 and a thickness of 165 nm. The average transmittance of the obtained MgF 2 -SiO 2 antireflective coatings was 99.1% at 400-1400 nm, which was close to the theoretical value. The hydrophobic angle of the coating surface reached 119° at first, and the angle further reached 152° after conducting surface modification by PFOTES. In addition, because the porosity of the coating surface was only 10.7%, the pencil hardness of the coating surface was 5 H and the critical load Lc was 27.05 N. In summary, the obtained antireflective coatings possessed superhydrophobic, self-cleaning, and wide-spectrum high-transmittance properties and good mechanical strength.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO 2/SiO 2 thin-film pairs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristau, Detlev; Papernov, S.; Kozlov, A. A.

2015-11-23

The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and an E-field peak and averagemore » intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO 2 and SiO 2 materials.« less

Synthesis of SiO2-Coated Core-Shell ZnO Composites for Preparing High-Voltage Varistors

NASA Astrophysics Data System (ADS)

Qu, Xiao; Yao, Da-Chuan; Liu, Jin-Ran; Wang, Mao-Hua; Zhang, Han-Ping

2018-01-01

Monodispersed ZnO composite microspheres were successfully prepared by a facile ultrasound irradiation method. Then, the uniform core-shell structured composites were synthesized through the hydrolysis of tetraethyl orthosilicate on the surface of the ZnO composite microspheres. Microstructural studies of the as-obtained powders were carried out using the techniques of the x-ray powder diffraction, field emission scanning electron microscopy and transmission electron microscopy with energy dispersive x-ray spectroscopy. The results show that the pink ZnO composite powders as the core were spherical structures with the size of approximately 100 nm, and the SiO2 shell was fully coated on the surface of the core. On the basis of these results, the effect of SiO2 content on the thickness of the synthesized composites and microstructure, as well as the electrical properties of the ZnO varistors sintered in air at 1150°C for 2 h, were fully studied. In particular, the ZnO varistor prepared with the appropriate amount of the SiO2 coating (˜40 nm) leads to a superior electrical performance with the high breakdown voltage of 418 V mm-1 and an excellent nonlinear coefficient of 70.7, compared with the varistors obtained without the SiO2 coating. The high performance is attributed to the smaller and more homogeneous ZnO grains obtained via the SiO2 coating.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

Superconductor-superconductor bilayers for enhancing single-photon detection

NASA Astrophysics Data System (ADS)

Ivry, Yachin; Surick, Jonathan J.; Barzilay, Maya; Kim, Chung-Soo; Najafi, Faraz; Kalfon-Cohen, Estelle; Dane, Andrew D.; Berggren, Karl K.

2017-10-01

Here, we optimized ultrathin films of granular NbN on SiO2 and of amorphous αW5Si3. We showed that hybrid superconducting nanowire single-photon detectors (SNSPDs) made of 2 nm thick αW5Si3 films over 2 nm thick NbN films exhibit advantageous coexistence of timing (<5 ns reset time and 52 ps timing jitter) and efficiency (>96% quantum efficiency) performance. We discuss the governing mechanism of this hybridization via the proximity effect. Our results demonstrate saturated SNSPDs performance at 1550 nm optical wavelength and suggest that such hybridization can significantly expand the range of available superconducting properties, impacting other nano-superconducting technologies. Lastly, this hybridization may be used to tune properties, such as the amorphous character of superconducting films.

Visible Wavelength Color Filters Using Dielectric Subwavelength Gratings for Backside-Illuminated CMOS Image Sensor Technologies.

PubMed

Horie, Yu; Han, Seunghoon; Lee, Jeong-Yub; Kim, Jaekwan; Kim, Yongsung; Arbabi, Amir; Shin, Changgyun; Shi, Lilong; Arbabi, Ehsan; Kamali, Seyedeh Mahsa; Lee, Hong-Seok; Hwang, Sungwoo; Faraon, Andrei

2017-05-10

We report transmissive color filters based on subwavelength dielectric gratings that can replace conventional dye-based color filters used in backside-illuminated CMOS image sensor (BSI CIS) technologies. The filters are patterned in an 80 nm-thick poly silicon film on a 115 nm-thick SiO 2 spacer layer. They are optimized for operating at the primary RGB colors, exhibit peak transmittance of 60-80%, and have an almost insensitive response over a ± 20° angular range. This technology enables shrinking of the pixel sizes down to near a micrometer.

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

Seed layer effect on different properties and UV detection capability of hydrothermally grown ZnO nanorods over SiO2/p-Si substrate

NASA Astrophysics Data System (ADS)

Sannakashappanavar, Basavaraj S.; Byrareddy, C. R.; Kumar, Pesala Sudheer; Yadav, Aniruddh Bahadur

2018-05-01

Hydrothermally grown one dimensional ZnO nanostructures are among the most widely used semiconductor materials to build high-efficiency electronic devices for various applications. Few researchers have addressed the growth mechanism and effect of ZnO seed layer on different properties of ZnO nanorods grown by hydrothermal method, instead, no one has synthesized ZnO nanorod over SiO2/p-Si substrate. The aim of this study is to study the effect of ZnO seed layer and the growth mechanism of ZnO nanorods over SiO2/p-Si substrate. To achieve the goal, we have synthesized ZnO nanorods over different thickness ZnO seed layers by using the hydrothermal method on SiO2/p-Si substrate. The effects of c-plane area ratio were identified for the growth rate of c-plane, reaction rate constant and stagnant layer thickness also calculated by using a modified rate growth equation. We have identified maximum seed layer thickness for the growth of vertical ZnO nanorod. A step dislocation in the ZnO nanorods grown on 150and 200 nm thick seed layers was observed, the magnitude of Burges vector was calculated for this disorder. The seed layer and ZnO nanorods were characterized by AFM, XPS, UV-visible, XRD (X-ray diffraction, and SEM(scanning electron microscope). To justify the application of the grown ZnO nanorods Ti/Au was deposited over ZnO nanorods grown over all seed layers for the fabrication of photoconductor type UV detector.

Refractive index sensing in the visible/NIR spectrum using silicon nanopillar arrays.

PubMed

Visser, D; Choudhury, B Dev; Krasovska, I; Anand, S

2017-05-29

Si nanopillar (NP) arrays are investigated as refractive index sensors in the visible/NIR wavelength range, suitable for Si photodetector responsivity. The NP arrays are fabricated by nanoimprint lithography and dry etching, and coated with thin dielectric layers. The reflectivity peaks obtained by finite-difference time-domain (FDTD) simulations show a linear shift with coating layer thickness. At 730 nm wavelength, sensitivities of ~0.3 and ~0.9 nm/nm of SiO 2 and Si 3 N 4 , respectively, are obtained; and the optical thicknesses of the deposited surface coatings are determined by comparing the experimental and simulated data. The results show that NP arrays can be used for sensing surface bio-layers. The proposed method could be useful to determine the optical thickness of surface coatings, conformal and non-conformal, in NP-based optical devices.

SiO2 nanofluid planar jet impingement cooling on a convex heated plate

NASA Astrophysics Data System (ADS)

Asghari Lafmajani, Neda; Ebrahimi Bidhendi, Mahsa; Ashjaee, Mehdi

2016-12-01

The main objective of this paper is to investigate the heat transfer coefficient of a planar jet of SiO2 nanofluid that impinges vertically on the middle of a convex heated plate for cooling purposes. The planar jet issues from a rectangular slot nozzle. The convex aluminum plate has a thickness, width and length of 0.2, 40 and 130 mm, respectively, and is bent with a radius of 200 mm. A constant heat-flux condition is employed. 7 nm SiO2 particles are added to water to prepare the nanofluid with 0.1, 1 and 2 % (ml SiO2/ml H2O) concentrations. The tests are also performed at different Reynolds numbers from 1803 to 2782. Results indicate that adding the SiO2 nanoparticles can effectively increase both local and average heat transfer coefficients up to 39.37 and 32.78 %, respectively. These positive effects often are more pronounced with increasing Reynolds numbers. This enhancement increases with ascending the concentration of nanofluid, especially from 0.1 to 1 %.

Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe

2016-05-15

Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ frommore » which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very low defect growth rate of 0.032/cm{sup 2}/h (t > τ) have been measured. At the end of the storage test (2003 h), the defect density remains very low, i.e., only 50/cm{sup 2}. On the other hand, the device with the single PVD-deposited SiO barrier layer shows no significant lag time (τ ∼ 0), and the number of defects grows linearly from initial time with a high occurrence rate of 0.517/cm{sup 2}/h. This is coherent with the pinhole-full nature of fresh, PVD-deposited, SiO films. At intermediate times, a second regime shows a lower defect occurrence rate of 0.062/cm{sup 2}/h. At a longer time span (t > 1200 h), the SiO barrier begins to degrade, and a localized crystallization onto the oxide surface, giving rise to new defects (occurrence rate 0.461/cm{sup 2}/h), could be observed. At the end of the test (2003 h), single SiO films show a very high defect density of 600/cm{sup 2}. Interestingly, the SiO surface in the Al{sub 2}O{sub 3}/SiO device does not appeared crystallized at a high time span, suggesting that the crystallization observed on the SiO surface in the AlQ{sub 3}/SiO device rather originates into the AlQ{sub 3} layer, due to high humidity ingress on the organic layer through SiO pinholes. This has been confirmed by atomic force microscopy surface imaging of the AlQ{sub 3}/SiO surface showing a central hole in the crystallization zone with a 60 nm depth, deeper than SiO thickness (25 nm). Using the organic AlQ{sub 3} sensor, the different observations made in this work give a quantitative comparison of defects' occurrence and growth in ALD-deposited versus PVD-deposited oxide films, as well as in their combination PVD/ALD and ALD/PVD.« less

In-situ observation of equilibrium transitions in Ni films; agglomeration and impurity effects.

PubMed

Thron, Andrew M; Greene, Peter; Liu, Kai; van Benthem, Klaus

2014-02-01

Dewetting of ultra-thin Ni films deposited on SiO2 layers was observed, in cross-section, by in situ scanning transmission electron microscopy. Holes were observed to nucleate by voids which formed at the Ni/SiO2 interface rather than at triple junctions at the free surface of the Ni film. Ni islands were observed to retract, in attempt to reach equilibrium on the SiO2 layer. SiO2 layers with 120 nm thickness were found to limit in situ heating experiments due to poor thermal conductivity of SiO2. The formation of graphite was observed during the agglomeration of ultra-thin Ni films. Graphite was observed to wet both the free surface and the Ni/SiO2 interface of the Ni islands. Cr forms surface oxide layers on the free surface of the SiO2 layer and the Ni islands. Cr does not prevent the dewetting of Ni, however it will likely alter the equilibrium shape of the Ni islands. © 2013 Published by Elsevier B.V.

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

Preparation of Hollow CuO@SiO2 Spheres and Its Catalytic Performances for the NO + CO and CO Oxidation

PubMed Central

Niu, Xiaoyu; Zhao, Tieying; Yuan, Fulong; Zhu, Yujun

2015-01-01

The hollow CuO@SiO2 spheres with a mean diameter of 240 nm and a thin shell layer of about 30 nm in thickness was synthesized using an inorganic SiO2 shell coating on the surface of Cu@C composite that was prepared by a two-step hydrothermal method. The obtained hollow CuO@SiO2 spheres were characterized by ICP-AES, nitrogen adsorption-desorption, SEM, TEM, XRD, H2-TPR, CO-TPR, CO-TPD and NO-TPD. The results revealed that the hollow CuO@SiO2 spheres consist of CuO uniformly inserted into SiO2 layer. The CuO@SiO2 sample exhibits particular catalytic activities for CO oxidation and NO + CO reactions compared with CuO supported on SiO2 (CuO/SiO2). The higher catalytic activity is attributed to the special hollow shell structure that possesses much more highly dispersed CuO nanocluster that can be easy toward the CO and NO adsorption and the oxidation of CO on its surface. PMID:25777579

Efficient one-pot sonochemical synthesis of thickness-controlled silica-coated superparamagnetic iron oxide (Fe3O4/SiO2) nanospheres

NASA Astrophysics Data System (ADS)

Abbas, Mohamed; Abdel-Hamed, M. O.; Chen, Jiangang

2017-12-01

A facile and eco-friendly efficient sonochemical approach was designed for the synthesis of highly crystalline Fe3O4 and Fe3O4/SiO2 core/shell nanospheres in single reaction. The generated physical properties (shock waves, microjets, and turbulent flows) from ultrasonication as a consequence of the collapse of microbubbles and polyvinylpyrrolidone (PVP) as a chemical linker were found to play a crucial role in the successful formation of the core/shell NPs within short time than the previously reported methods. Transmission electron microscopy revealed that a uniform SiO2 shell is successfully coated over Fe3O4 nanospheres, and the thickness of the silica shell could be easily controlled in the range from 5 to 15 nm by adjusting the reaction parameters. X-ray diffraction data were employed to confirm the formation of highly crystalline and pure phase of a cubic inverse spinel structure for magnetite (Fe3O4) nanospheres. The magnetic properties of the as-synthesized Fe3O4 and Fe3O4/SiO2 core/shell nanospheres were measured at room temperature using vibrating sample magnetometer, and the results demonstrated a high magnetic moment values with superparamagnetic properties.

Preparation of porous hollow silica spheres via a layer-by-layer process and the chromatographic performance

NASA Astrophysics Data System (ADS)

Wei, Xiaobing; Gong, Cairong; Chen, Xujuan; Fan, Guoliang; Xu, Xinhua

2017-03-01

Hollow silica spheres possessing excellent mechanical properties were successfully prepared through a layer-by-layer process using uniform polystyrene (PS) latex fabricated by dispersion polymerization as template. The formation of hollow SiO2 micro-spheres, structures and properties were observed in detail by zeta potential, SEM, TEM, FTIR, TGA and nitrogen sorption porosimetry. The results indicated that the hollow spheres were uniform with particle diameter of 1.6 μm and shell thickness of 150 nm. The surface area was 511 m2/g and the pore diameter was 8.36 nm. A new stationary phase for HPLC was obtained by using C18-derivatized hollow SiO2 micro-spheres as packing materials and the chromatographic properties were evaluated for the separation of some regular small molecules. The packed column showed low column pressure, high values of efficiency (up to about 43 000 plates/m) and appropriate asymmetry factors.

Picosecond ultrasonic study of surface acoustic waves on periodically patterned layered nanostructures.

PubMed

Colletta, Michael; Gachuhi, Wanjiru; Gartenstein, Samuel A; James, Molly M; Szwed, Erik A; Daly, Brian C; Cui, Weili; Antonelli, George A

2018-07-01

We have used the ultrafast pump-probe technique known as picosecond ultrasonics to generate and detect surface acoustic waves on a structure consisting of nanoscale Al lines on SiO 2 on Si. We report results from ten samples with varying pitch (1000-140 nm) and SiO 2 film thickness (112 nm or 60 nm), and compare our results to an isotropic elastic calculation and a coarse-grained molecular dynamics simulation. In all cases we are able to detect and identify a Rayleigh-like surface acoustic wave with wavelength equal to the pitch of the lines and frequency in the range of 5-24 GHz. In some samples, we are able to detect additional, higher frequency surface acoustic waves or independent modes of the Al lines with frequencies close to 50 GHz. We also describe the effects of probe beam polarization on the measurement's sensitivity to the different surface modes. Copyright © 2018 Elsevier B.V. All rights reserved.

Growing Aligned Carbon Nanotubes for Interconnections in ICs

NASA Technical Reports Server (NTRS)

Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M.

2005-01-01

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by electron-beam lithography. These and other nanotubes were found to have lengths ranging from 2 to 10 m and diameters ranging from 30 to 200 nm, the exact values of length depending on growth times and conditions and the exact values of diameter depending on the diameters and thicknesses of the catalyst spots. The bottom part of Figure 2 is an SEM of an embedded array of carbon nanotubes after CMP.

Surface engineering with functional random copolymers for nanolithographic applications

NASA Astrophysics Data System (ADS)

Sparnacci, Katia; Antonioli, Diego; Gianotti, Valentina; Lupi, Federico Ferrarese; Giammaria, Tommaso Jacopo; Seguini, Gabriele; Perego, Michele; Laus, Michele

2016-05-01

Hydroxyl-terminated P(S-r-MMA) random copolymers with molecular weight ranging from 1.7 to 69 kg/mol and a styrene unit fraction of 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of domains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer thin films. When the thickness (H) of the grafted layer is greater than 5-6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the Mn of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film.

Growth, Fabrication and Characterization of Patterned Semiconductor Nanostructures

NASA Astrophysics Data System (ADS)

Kumari, Archana

In this work we developed a new technique for the growth of GaAs nanostrcutures and tungsten disulphide (WS2) nanodots, a two dimensional dichalcogenide (2D-TMD). We patterned a thin SiO2 film for the first time by reactive ion etching through the alumina templates and GaAs nanopillars and nanodots were grown through the holes in SiO2 film by MBE. The WS2 nanodots were synthesized by the atomic layer deposition of WS 2 via alumina template. First, WO3 nanodots were deposited through the porous template using e-beam evaporation and then WO3 vapor reacts with sulfur to obtain WS2 nanodots by chemical vapor deposition technique. We studied morphological and optical properties of patterned nanostructures using SEM, TEM photoluminescence(PL) technique, AFM and Raman microscopy. We used different As2/Ga ratio to obtain patterned nanostructures through the holes of the SiO2 film. These nanopillars were epitaxially aligned to the GaAs(111)B substrates. We achieved (111)B oriented nanopillars with typical diameters between 72 nm to 76 nm and lengths between 200 nm- 600 nm. These nanopillars have six {110} side facets. Though there were few defects, but mostly they were following the pattern in SiO 2. We obtained nanopillars with predominantly two types of tops, triangular pyramidal tops and hexagonal flat tops. We find that these nanopillars have a mixed crystal structure of zinc-blende and wurtzite structures. There is a high density of twins and stacking faults. Alternating wurtzite and zinc-blende layers within the nanopillars, however, lead to quantum confinement effect and thus a blue-shift of PL emission. WS2 nanodots precisely controlled in size have potential applications in nanoelectronics due to their unique optical and electrical properties. Most of the nanodots synthesized so far are produced using liquid exfoliation method from the bulk. Here we report the size controlled growth of uniform WS2 nanodots using self -organized alumina templates as a growth mask on sapphire (1000) substrates by a chemical vapor deposition (CVD) technique. Scanning electron microscope (SEM) images show that the size of the nanodots predominantly varies from 46 nm to 76 nm. In one region which extends to few micrometers, the nanodots are approximately of same size and thickness. Atomic force microscopy (AFM) images confirm that the thickness of these nanodots varies from monolayer to few layers. In the measured PL spectra at room temperature, the emission peak of the nanodots on sapphire substrates was shown at 2.01eV. It was redshifted as compare to the emission from WS2 monolayers. The analysis of Raman spectra shows no effect related to the size.

Osteoblast responses to different oxide coatings produced by the sol-gel process on titanium substrates.

PubMed

Ochsenbein, Anne; Chai, Feng; Winter, Stefan; Traisnel, Michel; Breme, Jürgen; Hildebrand, Hartmut F

2008-09-01

In order to improve the osseointegration of endosseous implants made from titanium, the structure and composition of the surface were modified. Mirror-polished commercially pure (cp) titanium substrates were coated by the sol-gel process with different oxides: TiO(2), SiO(2), Nb(2)O(5) and SiO(2)-TiO(2). The coatings were physically and biologically characterized. Infrared spectroscopy confirmed the absence of organic residues. Ellipsometry determined the thickness of layers to be approximately 100nm. High resolution scanning electron microscopy (SEM) and atomice force microscopy revealed a nanoporous structure in the TiO(2) and Nb(2)O(5) layers, whereas the SiO(2) and SiO(2)-TiO(2) layers appeared almost smooth. The R(a) values, as determined by white-light interferometry, ranged from 20 to 50nm. The surface energy determined by the sessile-drop contact angle method revealed the highest polar component for SiO(2) (30.7mJm(-2)) and the lowest for cp-Ti and 316L stainless steel (6.7mJm(-2)). Cytocompatibility of the oxide layers was investigated with MC3T3-E1 osteoblasts in vitro (proliferation, vitality, morphology and cytochemical/immunolabelling of actin and vinculin). Higher cell proliferation rates were found in SiO(2)-TiO(2) and TiO(2), and lower in Nb(2)O(5) and SiO(2); whereas the vitality rates increased for cp-Ti and Nb(2)O(5). Cytochemical assays showed that all substrates induced a normal cytoskeleton and well-developed focal adhesion contacts. SEM revealed good cell attachment for all coating layers. In conclusion, the sol-gel-derived oxide layers were thin, pure and nanostructured; consequent different osteoblast responses to those coatings are explained by the mutual action and coadjustment of different interrelated surface parameters.

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

NASA Astrophysics Data System (ADS)

Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

2012-07-01

Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Focused electron beam induced deposition of pure SIO II

NASA Astrophysics Data System (ADS)

Perentes, Alexandre; Hoffmann, Patrik; Munnik, Frans

2007-02-01

Focused electron beam induced processing (FEBID) equipments are the "all in one" tools for high resolution investigation, and modification of nano-devices. Focused electron beam induced deposition from a gaseous precursor usually results in a nano-composite sub-structured material, in which the interesting material is embedded in an amorphous carbonaceous matrix. Using the Hydrogen free tetraisocyanatosilane Si(NCO) 4 molecule as Si source, we show how a controlled oxygen flux, simultaneously injected with the precursor vapors, causes contaminants to vanish from the FEB deposits obtained and leads to the deposition of pure SiO II. The chemical composition of the FEBID material could be controlled from SiC IINO 3 to SiO II, the latter containing undetectable foreign element contamination. The [O II] / [TICS] ratio needed to obtain SiO II in our FEB deposition equipment is larger than 300. The evolution of the FEBID material chemical composition is presented as function of the [O II] / [TICS] molecular flux ratios. A hypothetical decomposition pathway of this silane under these conditions is discussed based on the different species formed under electron bombardment of TICS. Transmission electron microscopy investigations demonstrated that the deposited oxide is smooth (roughness sub 2nm) and amorphous. Infrared spectroscopy confirmed the low concentration of hydroxyl groups. The Hydrogen content of the deposited oxide, measured by elastic recoil detection analysis, is as low as 1 at%. 193nm wavelength AIMS investigations of 125nm thick SiO II pads (obtained with [O II] / [TICS] = 325) showed an undetectable light absorption.

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

NASA Technical Reports Server (NTRS)

Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

1993-01-01

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Transmission and reflection studies of thin films in the vacuum ultraviolet

NASA Technical Reports Server (NTRS)

Peterson, Lennart R.

1989-01-01

Both the transmittance and reflectance of 2 mm thick MgF2 substrates and of thin films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on these substrates were measured for the wavelength range 120 nm to 230 nm. Results for BaF2, LaF2 and MgF2 show promise as being good materials from which interference filters can be made. The software and related hardware needed to take large amounts of data automatically in future measurements of the transmittance and reflectance was developed.

Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate.

PubMed

Shim, Kyu Hwan; Hulme, John; Maeng, Eun Ho; Kim, Meyoung-Kon; An, Seong Soo A

2014-01-01

A multitude of nanoparticles, such as titanium oxide (TiO2), zinc oxide, aluminum oxide, gold oxide, silver oxide, iron oxide, and silica oxide, are found in many chemical, cosmetic, pharmaceutical, and electronic products. Recently, SiO2 nanoparticles were shown to have an inert toxicity profile and no association with an irreversible toxicological change in animal models. Hence, exposure to SiO2 nanoparticles is on the increase. SiO2 nanoparticles are routinely used in numerous materials, from strengthening filler for concrete and other construction composites, to nontoxic platforms for biomedical application, such as drug delivery and theragnostics. On the other hand, recent in vitro experiments indicated that SiO2 nanoparticles were cytotoxic. Therefore, we investigated these nanoparticles to identify potentially toxic pathways by analyzing the adsorbed protein corona on the surface of SiO2 nanoparticles in the blood and brain of the rat. Four types of SiO2 nanoparticles were chosen for investigation, and the protein corona of each type was analyzed using liquid chromatography-tandem mass spectrometry technology. In total, 115 and 48 plasma proteins from the rat were identified as being bound to negatively charged 20 nm and 100 nm SiO2 nanoparticles, respectively, and 50 and 36 proteins were found for 20 nm and 100 nm arginine-coated SiO2 nanoparticles, respectively. Higher numbers of proteins were adsorbed onto the 20 nm sized SiO2 nanoparticles than onto the 100 nm sized nanoparticles regardless of charge. When proteins were compared between the two charges, higher numbers of proteins were found for arginine-coated positively charged SiO2 nanoparticles than for the negatively charged nanoparticles. The proteins identified as bound in the corona from SiO2 nanoparticles were further analyzed with ClueGO, a Cytoscape plugin used in protein ontology and for identifying biological interaction pathways. Proteins bound on the surface of nanoparticles may affect functional and conformational properties and distributions in complicated biological processes.

Magneto-optical microcavity with Au plasmonic layer

NASA Astrophysics Data System (ADS)

Mikhailova, T. V.; Lyashko, S. D.; Tomilin, S. V.; Karavainikov, A. V.; Prokopov, A. R.; Shaposhnikov, A. N.; Berzhansky, V. N.

2017-11-01

Optical and Faraday rotation spectra of magneto-optical microcavity coated with Au plasmonic layer of gradient thickness were investigated theoretically and experimentally. It was shown that the Tamm plasmon-polaritons mode forms near the long-wavelength edge of photonic band gap. The presence of Au coating of thickness of 90.4 nm increase the Faraday rotation at Tamm plasmon-polaritons and cavity resonances in 1.3 and 7 times, respectively. By transfer matrix method it were found that the incorporation of SiO2 buffer layer with a thickness in the range from 155 to 180 nm between microcavity and Au coating leads to the strong coupling between cavity mode and Tamm plasmon-polaritons. In this case, one or two resonances arise in the vicinity of the cavity mode depending on the thickness of plasmonic layer. The Faraday rotation for coupled mode in twice less than the value of rotation for single cavity mode.

Superstrong encapsulated monolayer graphene by the modified anodic bonding

NASA Astrophysics Data System (ADS)

Jung, Wonsuk; Yoon, Taeshik; Choi, Jongho; Kim, Soohyun; Kim, Yong Hyup; Kim, Taek-Soo; Han, Chang-Soo

2013-12-01

We report a superstrong adhesive of monolayer graphene by modified anodic bonding. In this bonding, graphene plays the role of a superstrong and ultra-thin adhesive between SiO2 and glass substrates. As a result, monolayer graphene presented a strong adhesion energy of 1.4 J m-2 about 310% that of van der Waals bonding (0.45 J m-2) to SiO2 and glass substrates. This flexible solid state graphene adhesive can tremendously decrease the adhesive thickness from about several tens of μm to 0.34 nm for epoxy or glue at the desired bonding area. As plausible causes of this superstrong adhesion, we suggest conformal contact with the rough surface of substrates and generation of C-O chemical bonding between graphene and the substrate due to the bonding process, and characterized these properties using optical microscopy, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.We report a superstrong adhesive of monolayer graphene by modified anodic bonding. In this bonding, graphene plays the role of a superstrong and ultra-thin adhesive between SiO2 and glass substrates. As a result, monolayer graphene presented a strong adhesion energy of 1.4 J m-2 about 310% that of van der Waals bonding (0.45 J m-2) to SiO2 and glass substrates. This flexible solid state graphene adhesive can tremendously decrease the adhesive thickness from about several tens of μm to 0.34 nm for epoxy or glue at the desired bonding area. As plausible causes of this superstrong adhesion, we suggest conformal contact with the rough surface of substrates and generation of C-O chemical bonding between graphene and the substrate due to the bonding process, and characterized these properties using optical microscopy, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03822j

Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Jablonka, L.; Riekehr, L.; Zhang, Z.; Zhang, S.-L.; Kubart, T.

2018-01-01

Ultrathin Co films deposited on SiO2 with conductivities exceeding that of Cu are demonstrated. Ionized deposition implemented by high-power impulse magnetron sputtering (HiPIMS) is shown to result in smooth films with large grains and low resistivities, namely, 14 µΩ cm at a thickness of 40 nm, which is close to the bulk value of Co. Even at a thickness of only 6 nm, a resistivity of 35 µΩ cm is obtained. The improved film quality is attributed to a higher nucleation density in the Co-ion dominated plasma in HiPIMS. In particular, the pulsed nature of the Co flux as well as shallow ion implantation of Co into SiO2 can increase the nucleation density. Adatom diffusion is further enhanced in the ionized process, resulting in a dense microstructure. These results are in contrast to Co deposited by conventional direct current magnetron sputtering where the conductivity is reduced due to smaller grains, voids, rougher interfaces, and Ar incorporation. The resistivity of the HiPIMS films is shown to be in accordance with models by Mayadas-Shatzkes and Sondheimer which consider grain-boundary and surface-scattering.

The effect of self-assembled monolayers on graphene conductivity and morphology

NASA Astrophysics Data System (ADS)

Moore, T. L.; Chen, J. H.; Riddick, B.; Williams, E. D.

2009-03-01

Graphene transport properties are limited by charge defects in SiO2, and by large charge density due to strong interaction with SiC. To modify these effects we have treated 300 nm SiO2 with tricholosilanes with different termination groups including pure and fluoro and amino-terminated hydrocarbons for use as substrates for mechanical exfoliation of graphene. XPS measurements verify the presence of the expected termination groups. AFM measurements reveal modified monolayer roughness and correlation lengths; for a fluorinated carbon chain the RMS roughness is 0.266 ± 0.017 nm and the correlation length is 10.2 ± 0.7 nm compared to 0.187 ± 0.011 nm and 19.8 ± 2.5 nm for SiO2. Surface free energies of the monolayers and the SiO2 blank have been computed from static contact angle measurements and all decrease the SiO2 surface free energy; for the fluorinated carbon chain monolayer a decrease of 20 mJ/m^2 from SiO2. We will discuss the ease of exfoliation, and the morphology and conductivity of graphene on these monolayers.

About the role of phase matching between a coated microsphere and a tapered fiber: experimental study.

PubMed

Ristić, Davor; Rasoloniaina, Alphonse; Chiappini, Andrea; Féron, Patrice; Pelli, Stefano; Conti, Gualtiero Nunzi; Ivanda, Mile; Righini, Giancarlo C; Cibiel, Gilles; Ferrari, Maurizio

2013-09-09

Coatings of spherical optical microresonators are widely employed for different applications. Here the effect of the thickness of a homogeneous coating layer on the coupling of light from a tapered fiber to a coated microsphere has been studied. Spherical silica microresonators were coated using a 70SiO(2)- 30HfO(2) glass doped with 0.3 mol% Er(3+) ions. The coupling of a 1480 nm pump laser inside the sphere has been assessed using a tapered optical fiber and observing the 1530-1580 nm Er(3+) emission outcoupled to the same tapered fiber. The measurements were done for different coating thicknesses and compared with theoretical calculations to understand the relationship of the detected signal with the whispering gallery mode electric field profiles.

Fast Electromechanical Switches Based on Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Kaul, Anupama; Wong, Eric; Epp, Larry

2008-01-01

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Study on spectroscopic properties and effects of tungsten ions in 2Bi2O3-3GeO2/SiO2 glasses.

PubMed

Yu, Pingsheng; Su, Liangbi; Cheng, Junhua; Zhang, Xia; Xu, Jun

2017-04-01

The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass samples have been prepared by the conventional melt quenching technique. XRD patterns, absorption spectra, excitation-emission spectra and Raman measurements were utilized to characterize the synthesized glasses. When substitute SiO 2 for GeO 2 , the 0.4Bi 2 O 3 -(0.4-0.1)GeO 2 -(0.2-0.5)SiO 2 glasses exhibit strong emission centered at about 475nm (under 300nm excitation), and the decay constants are within the scope of 20-40ns. W doping into 2Bi 2 O 3 -3SiO 2 glass could increase the emission intensity of 470nm, and the W-doped 2Bi 2 O 3 -3SiO 2 glass has shown another emission at about 433nm with much shorter decay time (near 10ns). The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass system could be the possible candidate for scintillator in high energy physics applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

PubMed

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

SiO2-coated LiNi0.915Co0.075Al0.01O2 cathode material for rechargeable Li-ion batteries.

PubMed

Zhou, Pengfei; Zhang, Zhen; Meng, Huanju; Lu, Yanying; Cao, Jun; Cheng, Fangyi; Tao, Zhanliang; Chen, Jun

2016-11-24

We reported a one-step dry coating of amorphous SiO 2 on spherical Ni-rich layered LiNi 0.915 Co 0.075 Al 0.01 O 2 (NCA) cathode materials. Combined characterization of XRD, EDS mapping, and TEM indicates that a SiO 2 layer with an average thickness of ∼50 nm was uniformly coated on the surface of NCA microspheres, without inducing any change of the phase structure and morphology. Electrochemical tests show that the 0.2 wt% SiO 2 -coated NCA material exhibits enhanced cyclability and rate properties, combining with better thermal stability compared with those of pristine NCA. For example, 0.2 wt% SiO 2 -coated NCA delivers a high specific capacity of 181.3 mA h g -1 with a capacity retention of 90.7% after 50 cycles at 1 C rate and 25 °C. Moreover, the capacity retention of this composite at 60 °C is 12.5% higher than that of pristine NCA at 1 C rate after 50 cycles. The effects of SiO 2 coating on the electrochemical performance of NCA are investigated by EIS, CV, and DSC tests, the improved performance is attributed to the surface coating layer of amorphous SiO 2 , which effectively suppresses side reactions between NCA and electrolytes, decreases the SEI layer resistance, and retards the growth of charge-transfer resistance, thus enhancing structural and cycling stability of NCA.

Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure

NASA Astrophysics Data System (ADS)

Fairuz Budiman, Mohd; Hu, Weiguo; Igarashi, Makoto; Tsukamoto, Rikako; Isoda, Taiga; Itoh, Kohei M.; Yamashita, Ichiro; Murayama, Akihiro; Okada, Yoshitaka; Samukawa, Seiji

2012-02-01

A sub-10 nm, high-density, periodic silicon-nanodisc (Si-ND) array has been fabricated using a new top-down process, which involves a 2D array bio-template etching mask made of Listeria-Dps with a 4.5 nm diameter iron oxide core and damage-free neutral-beam etching (Si-ND diameter: 6.4 nm). An Si-ND array with an SiO2 matrix demonstrated more controllable optical bandgap energy due to the fine tunability of the Si-ND thickness and diameter. Unlike the case of shrinking Si-ND thickness, the case of shrinking Si-ND diameter simultaneously increased the optical absorption coefficient and the optical bandgap energy. The optical absorption coefficient became higher due to the decrease in the center-to-center distance of NDs to enhance wavefunction coupling. This means that our 6 nm diameter Si-ND structure can satisfy the strict requirements of optical bandgap energy control and high absorption coefficient for achieving realistic Si quantum dot solar cells.

Microwave electromagnetic and absorption properties of SiO2/C core/shell composites plated with metal cobalt

NASA Astrophysics Data System (ADS)

Shen, Guozhu; Fang, Xumin; Wu, Hongyan; Wei, Hongyu; Li, Jingfa; Li, Kaipeng; Mei, Buqing; Xu, Yewen

2017-04-01

A facile method has been developed to fabricate magnetic core/shell SiO2/C/Co sub-microspheres via the pyrolysis of SiO2/PANI (polyaniline) and electroless plating method. The electromagnetic parameters of these SiO2/C and SiO2/C/Co composites were measured and the microwave reflection loss properties were evaluated in the frequency range of 2-18 GHz. The results show that the dielectric loss of SiO2/C composite increases with the increase of carbonization temperature and the magnetic loss enhances due to the deposition of cobalt on the SiO2/C sub-microspheres. The reflection loss results exhibit that the microwave absorption properties of the SiO2/C/Co composites are more excellent than those of SiO2/C composites for each thickness. The maximum effective absorption bandwidth (reflection loss ≤ -10 dB) arrives at 5.0 GHz (13.0-18 GHz) for SiO2/C/Co composite with 1.5 mm of thickness and the minimum reflection loss value is -24.0 dB at 5.0 GHz with 4.0 mm of thickness. The microwave loss mechanism of the SiO2/C/Co composites was also discussed in this paper.

Screening length and quantum capacitance in graphene by scanning probe microscopy.

PubMed

Giannazzo, F; Sonde, S; Raineri, V; Rimini, E

2009-01-01

A nanoscale investigation on the capacitive behavior of graphene deposited on a SiO2/n(+) Si substrate (with SiO2 thickness of 300 or 100 nm) was carried out by scanning capacitance spectroscopy (SCS). A bias V(g) composed by an AC signal and a slow DC voltage ramp was applied to the macroscopic n(+) Si backgate of the graphene/SiO(2)/Si capacitor, while a nanoscale contact was obtained on graphene by the atomic force microscope tip. This study revealed that the capacitor effective area (A(eff)) responding to the AC bias is much smaller than the geometrical area of the graphene sheet. This area is related to the length scale on which the externally applied potential decays in graphene, that is, the screening length of the graphene 2DEG. The nonstationary charges (electrons/holes) induced by the AC potential spread within this area around the contact. A(eff) increases linearly with the bias and in a symmetric way for bias inversion. For each bias V(g), the value of A(eff) is related to the minimum area necessary to accommodate the not stationary charges, according to the graphene density of states (DOS) at V(g). Interestingly, by decreasing the SiO(2) thickness from 300 to 100 nm, the slope of the A(eff) versus bias curve strongly increases (by a factor of approximately 50). The local quantum capacitance C(q) in the contacted graphene region was calculated starting from the screening length, and the distribution of the values of C(q) for different tip positions was obtained. Finally the lateral variations of the DOS in graphene was determined.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

PubMed Central

Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W.; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho

2016-01-01

The structural stability and electrical performance of SiO2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO2 film (thickness ~5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiOxCy) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO2 films. Moreover, the plasma-assisted SiO2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density (Dit ≈ 1011 cm−2 · eV−1). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiOxCy species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO2 on SiC can be obtained by the controlling the formation of SiOxCy through the highly reactive direct plasma-assisted oxidation process. PMID:27721493

Efficient drug delivery using SiO2-layered double hydroxide nanocomposites.

PubMed

Li, Li; Gu, Zi; Gu, Wenyi; Liu, Jian; Xu, Zhi Ping

2016-05-15

MgAl-layered double hydroxide (MgAl-LDH) nanoparticles have great potentials in drug and siRNA delivery. In this work, we used a nanodot-coating strategy to prepare SiO2 dot-coated layered double hydroxide (SiO2@MgAl-LDH) nanocomposites with good dispersibility and controllable size for drug delivery. The optimal SiO2@MgAl-LDH nanocomposite was obtained by adjusting synthetic parameters including the mass ratio of MgAl-LDH to SiO2, the mixing temperature and time. The optimal SiO2@MgAl-LDH nanocomposite was shown to have SiO2 nanodots (10-15nm in diameter) evenly deposited on the surface of MgAl-LDHs (110nm in diameter) with the plate-like morphology and the average hydrodynamic diameter of 170nm. We further employed SiO2@MgAl-LDH nanocomposite as a nanocarrier to deliver methotrexate (MTX), a chemotherapy drug, to the human osteosarcoma cell (U2OS) and found that MTX delivered by SiO2@MgAl-LDH nanocomposite apparently inhibited the U2OS cell growth. Copyright © 2016 Elsevier Inc. All rights reserved.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Tuning sputtered gold thickness to enhance absorption and emission in core-shell type erbium doped upconversion nanoparticles

NASA Astrophysics Data System (ADS)

Manurung, R. V.; Wu, C. T.; Chattopadhyay, S.

2018-03-01

Upconversion nanoparticles (UCNPs) converts near-infrared excitation to visible emission with advantages e.g. photostable, non-blinking, and background-free probes for bioimaging and biosensor. However, low quantum yield and low efficiency (∼1%) as drawback need to be enhanced. A plasmonic gold nano-structured surface was designed and fabricated to couple with the 980 nm radiation and produce plasmonic enhancement of the upconversion luminescence. The synthesis of the UCNPs was done by thermal decomposition and SiO2 coating prepared by the reverse microemulsion process. Here, we report a novel tunable plasmon-enhanced fluorescence by modulating the thickness and surface roughness of gold island film on Si. The localized surface plasmon resonance (LSPR) at 980 nm was obtained, matched with the native excitation of UCNPs resulting in maximum enhancement of 10-fold of green emission band at 540 nm for the Er-doped UCNPs.

One-pot synthesis of metal-organic framework@SiO2 core-shell nanoparticles with enhanced visible-light photoactivity.

PubMed

Li, Zong-Qun; Wang, Ai; Guo, Chun-Yan; Tai, Yan-Fang; Qiu, Ling-Guang

2013-10-14

This paper presents a novel strategy to prepare Cu3(BTC)2@SiO2 core-shell nanoparticles in the size range of 200-400 nm using a new one-pot strategy under ultrasonic irradiation at room temperature. In this approach, the silica shell thickness could be finely tuned in the size range of 12-60 nm for various reaction times. Nanocomposite thin films were fabricated on the glass substrates by Sol-Gel spin coating using the products for 1.5 h, 2 h and 2.5 h, respectively, and heat treated using an infrared lamp heating system in air. The photocatalytic degradation of phenol in aqueous solution using Cu2(BTC)3@SiO2 thin films was investigated under visible light irradiation at pH 4. After a 45 min reaction with phenol, the degradation rate was up to 93.1%. Moreover, the thin film photocatalysts could be reused 5 times without appreciable loss of photocatalytic activity for degradation of phenol. The present work clearly shows that the films as photocatalysts showed higher photocatalytic performance.

TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density.

PubMed

Cheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-i

2015-04-01

We report a low-temperature InP p-MOS with a high capacitance density of 2.7 µF/cm2, low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-κ TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to < 1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-12-01

In situ-formed SiO 2 was introduced into HfO 2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO 2 /SiO 2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO 2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO 2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10 -3 A/cm 2 at gate bias of V fb  + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO 2 /SiO 2 /Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO 2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.

PubMed

Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Jana, Surajit; Roy, Anisha; Singh, Kanishk; Cheng, Hsin-Ming; Chang, Mu-Tung; Mahapatra, Rajat; Chiu, Hsien-Chin; Yang, Jer-Ren

2016-12-01

A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd(2+) oxidation states lead to change Gd(3+) states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd(3+) ions, and the H2O2 sensing mechanism has been explained as well.

Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors

NASA Astrophysics Data System (ADS)

Chauhan, Ram Narayan; Tiwari, Nidhi; Liu, Po-Tsun; Shieh, Han-Ping D.; Kumar, Jitendra

2016-11-01

Indium zinc oxide (IZO), silicon containing IZO, and IZO/IZO:Si bilayer thin films have been prepared by dual radio frequency magnetron sputtering on glass and SiO2/Si substrates for studying their chemical compositions and electrical characteristics in order to ascertain reliability for thin film transistor (TFT) applications. An attempt is therefore made here to fabricate single IZO and IZO/IZO:Si bilayer TFTs to study the effect of film thickness, silicon incorporation, and bilayer active channel on device performance and negative bias illumination stress (NBIS) stability. TFTs with increasing single active IZO layer thickness exhibit decrease in carrier mobility but steady improvement in NBIS; the best values being μFE ˜ 27.0, 22.0 cm2/Vs and ΔVth ˜ -13.00, -6.75 V for a channel thickness of 7 and 27 nm, respectively. While silicon incorporation is shown to reduce the mobility somewhat, it raises the stability markedly (ΔVth ˜ -1.20 V). Further, IZO (7 nm)/IZO:Si (27 nm) bilayer based TFTs display useful characteristics (field effect mobility, μFE = 15.3 cm2/Vs and NBIS value, ΔVth =-0.75 V) for their application in transparent electronics.

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

NASA Astrophysics Data System (ADS)

Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; Kaschieva, S.

2006-08-01

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×1013 el/cm2, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×1014 el/cm2 was observed.

Magnetic glass-film based on single-nanosize 𝜺 -Fe2O3 nanoparticles

NASA Astrophysics Data System (ADS)

Yoshikiyo, Marie; Namai, Asuka; Nakagawa, Kosuke; Ohkoshi, Shin-ichi

2017-05-01

We report a magnetic thin film of single-nanosize ɛ-Fe2O3 in SiO2 matrix. The glass-film was prepared by sintering a silica coated iron oxide hydroxide on a quartz substrate in air. The glass-film consists of ɛ-Fe2O3 of 8.8 nm size, and its thickness was 570 nm (0.57 μm) with a roughness of 10 nm (0.01 μm). UV-vis spectrum showed that the glass-film has small absorbance of 0.043 at 500 nm. The magneto-optical effect was investigated, and Faraday ellipticity showed a magnetic hysteresis loop with a coercive field of 3.0 ± 0.2 kOe. Furthermore, single-nanosize ɛ-Fe2O3 without silica was prepared as a reference sample, and ferroelectricity was observed. Therefore, the present thin glass-film consists of single-nanosize ferroelectric-ferromagnetic nanoparticles.

Novel self-organization mechanism in ultrathin liquid films: theory and experiment.

PubMed

Trice, Justin; Favazza, Christopher; Thomas, Dennis; Garcia, Hernando; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2008-07-04

When an ultrathin metal film of thickness h (<20 nm) is melted by a nanosecond pulsed laser, the film temperature is a nonmonotonic function of h and achieves its maximum at a certain thickness h*. This is a consequence of the h and time dependence of energy absorption and heat flow. Linear stability analysis and nonlinear dynamical simulations that incorporate such intrinsic interfacial thermal gradients predict a characteristic pattern length scale Lambda that decreases for h>h*, in contrast to the classical spinodal dewetting behavior where Lambda increases monotonically as h2. These predictions agree well with experimental observations for Co and Fe films on SiO2.

Low Group Delay Dispersion Optical Coating for Broad Bandwidth High Reflection at 45° Incidence, P Polarization of Femtosecond Pulses with 900 nm Center Wavelength

DOE PAGES

Bellum, John C.; Field, Ella S.; Winstone, Trevor B.; ...

2016-03-01

We describe an optical coating design suitable for broad bandwidth high reflection (BBHR) at 45° angle of incidence (AOI), P polarization (Ppol) of femtosecond (fs) laser pulses whose wavelengths range from 800 to 1000 nm. The design process is guided by quarter-wave HR coating properties. Our design must afford low group delay dispersion (GDD) for reflected light over the broad, 200 nm bandwidth in order to minimize temporal broadening of the fs pulses due to dispersive alteration of relative phases between their frequency components. The design should also be favorable to high laser-induced damage threshold (LIDT). We base the coatingmore » on TiO 2/SiO 2 layer pairs produced by means of e-beam evaporation with ion-assisted deposition, and use OptiLayer Thin Film Software to explore designs starting with TiO 2/SiO 2 layers having thicknesses in a reverse chirped arrangement. This approach led to a design with R > 99% from 800 to 1000 nm and GDD < 20 fs 2 from 843 to 949 nm (45° AOI, Ppol). The design’s GDD behaves in a smooth way, suitable for GDD compensation techniques, and its electric field intensities show promise for high LIDTs. Reflectivity and GDD measurements for the initial test coating indicate good performance of the BBHR design. Subsequent coating runs with improved process calibration produced two coatings whose HR bands satisfactorily meet the design goals. Lastly, for the sake of completeness, we summarize our previously reported transmission spectra and LIDT test results with 800 ps, 8 ps and 675 fs pulses for these two coatings, and present a table of the LIDT results we have for all of our TiO 2/SiO 2 BBHR coatings, showing the trends with test laser pulse duration from the ns to sub-ps regimes.« less

Effects of SiO 2 overlayer at initial growth stage of epitaxial Y 2O 3 film growth

NASA Astrophysics Data System (ADS)

Cho, M.-H.; Ko, D.-H.; Choi, Y. G.; Lyo, I. W.; Jeong, K.; Whang, C. N.

2000-12-01

We investigated the dependence of the Y 2O 3 film growth on Si surface at initial growth stage. The reflection high-energy electron diffraction, X-ray scattering, and atomic force microscopy showed that the film crystallinity and morphology strongly depended on whether Si surface contained O or not. In particular, the films grown on oxidized surfaces revealed significant improvement in crystallinity and surface smoothness. A well-ordered atomic structure of Y 2O 3 film was formed on 1.5 nm thick SiO 2 layer with the surface and interfacial roughness markedly enhanced, compared with the film grown on the clean Si surfaces. The epitaxial film on the oxidized Si surface exhibited extremely small mosaic structures at interface, while the film on the clean Si surface displayed an island-like growth with large mosaic structures. The nucleation sites for Y 2O 3 were provided by the reaction between SiO 2 and Y at the initial growth stage. The SiO 2 layer known to hinder crystal growth is found to enhance the nucleation of Y 2O 3, and provides a stable buffer layer against the silicide formation. Thus, the formation of the initial SiO 2 layer is the key to the high-quality epitaxial growth of Y 2O 3 on Si.

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

NASA Astrophysics Data System (ADS)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

Color selectivity of surface-plasmon holograms illuminated with white light.

PubMed

Ozaki, Miyu; Kato, Jun-ichi; Kawata, Satoshi

2013-09-20

By using the optical frequency dependence of surface-plasmon polaritons, color images can be reconstructed from holograms illuminated with white light. We report details on the color selectivity of the color holograms. The selectivity is tuned by the thickness of a dielectric film covering a plasmonic metal film. When the dielectric is SiO(2) and the metal is silver, the appropriate thicknesses are 25 and 55 nm, respectively. In terms of spatial color uniformity, holograms made of silver-film corrugations are better than holograms recorded on photographic film on a flat silver surface.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Bottom-up Fabrication of Graphene on Silicon/Silica Substrate via a Facile Soft-hard Template Approach

PubMed Central

Yang, Yuxing; Liu, Ruili; Wu, Jiayang; Jiang, Xinhong; Cao, Pan; Hu, Xiaofeng; Pan, Ting; Qiu, Ciyuan; Yang, Junyi; Song, Yinglin; Wu, Dongqing; Su, Yikai

2015-01-01

In this work, a novel soft-hard template method towards the direct fabrication of graphene films on silicon/silica substrate is developed via a tri-constituent self-assembly route. Using cetyl trimethyl ammonium bromide (CTAB) as a soft template, silica (SiO2) from tetramethoxysilane as a hard template, and pyrene as a carbon source, the self-assembly process allows the formation of a sandwich-like SiO2/CTAB/pyrene composite, which can be further converted to high quantity graphene films with a thickness of ~1 nm and a size of over 5 μm by thermal treatment. The morphology and thickness of the graphene films can be effectively controlled through the adjustment of the ratio of pyrene to CTAB. Furthermore, a high nonlinear refractive index n2 of ~10−12 m2 W−1 is measured from graphene/silica hybrid film, which is six orders of magnitude larger than that of silicon and comparable to the graphene from chemical vapor deposition process. PMID:26311022

Synthesis of Self-Assembled Multifunctional Nanocomposite Catalysts with Highly Stabilized Reactivity and Magnetic Recyclability

NASA Astrophysics Data System (ADS)

Yu, Xu; Cheng, Gong; Zheng, Si-Yang

2016-05-01

In this paper, a multifunctional Fe3O4@SiO2@PEI-Au/Ag@PDA nanocomposite catalyst with highly stabilized reactivity and magnetic recyclability was synthesized by a self-assembled method. The magnetic Fe3O4 nanoparticles were coated with a thin layer of the SiO2 to obtain a negatively charged surface. Then positively charged poly(ethyleneimine) polymer (PEI) was self-assembled onto the Fe3O4@SiO2 by electrostatic interaction. Next, negatively charged glutathione capped gold nanoparticles (GSH-AuNPs) were electrostatically self-assembled onto the Fe3O4@SiO2@PEI. After that, silver was grown on the surface of the nanocomposite due to the reduction of the dopamine in the alkaline solution. An about 5 nm thick layer of polydopamine (PDA) was observed to form the Fe3O4@SiO2@PEI-Au/Ag@PDA nanocomposite. The Fe3O4@SiO2@PEI-Au/Ag@PDA nanocomposite was carefully characterized by the SEM, TEM, FT-IR, XRD and so on. The Fe3O4@SiO2@PEI-Au/Ag@PDA nanocomposite shows a high saturation magnetization (Ms) of 48.9 emu/g, which allows it to be attracted rapidly to a magnet. The Fe3O4@SiO2@PEI-Au/Ag@PDA nanocomposite was used to catalyze the reduction of p-nitrophenol (4-NP) to p-aminophenol (4-AP) as a model system. The reaction kinetic constant k was measured to be about 0.56 min-1 (R2 = 0.974). Furthermore, the as-prepared catalyst can be easily recovered and reused for 8 times, which didn’t show much decrease of the catalytic capability.

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

NASA Astrophysics Data System (ADS)

Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

2018-06-01

In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

NASA Astrophysics Data System (ADS)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

2018-04-01

The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

Infrared reflective coatings for building and automobile glass windows for heat protection

NASA Astrophysics Data System (ADS)

Butt, M. A.; Fomchenkov, S. A.; Kazanskiy, N. L.; Ullah, A.; Ali, R. Z.; Habib, M.

2017-04-01

Sunlight can be used a source of light in buildings and automobiles, however infrared wavelengths in sunlight result in heating. In this work, Infrared Reflective Coatings are designed using thin films to transmit visible wavelengths 400 700 nm while reflecting infrared wavelengths above 700 nm. Three different design approaches have been used, namely single layer of metal, sandwich structure and multilayer design. Four metals (Ag, Au, Al and Cu) and two dielectrics (TiO2 and SiO2) are used in this study. Designs with Ag show maximum reflection of Infrared wavelengths in all designs. Sandwich structures of TiO2-Ag-TiO2 on substrate with 22 nm of thickness for each layer show the maximum transmission of 87% in the visible region and maximum reflection of Infrared wavelengths.

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Cherkova, S. G.; Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Kamaev, G. N.; Skuratov, V. A.

2017-08-01

Light-emitting nanoclusters were formed in Si/SiO2 multilayer structures irradiated with 167 MeV Xe ions to the doses of 1011-3  ×  1014 cm-2 and annealed in the forming-gas at 500 °C and in nitrogen at 800-1100 °C, 30 min. The thicknesses were ~4 nm or ~7-8 for the Si, and ~10 nm for the SiO2 layers. The structures were studied using photoluminescence (PL), Raman spectroscopy, and the cross-sectional high resolution transmission electron microscopy (HRTEM). As-irradiated samples showed the PL, correlating with the growth of the ion doses. HRTEM found the layers to be partly disintegrated. The thickness of the amorphous Si layer was crucial. For 4 nm thick Si layers the PL was peaking at ~490 nm, and quenched by the annealing. It was ascribed to the structural imperfections. For the thicker Si layers the PL was peaking at ~600 nm and was attributed to the Si-rich nanoclusters in silicon oxide. The annealing increases the PL intensity and shifts the band to ~790 nm, typical of Si nanocrystals. Its intensity was proportional to the dose. Raman spectra confirmed the nanocrystals formation. All the results obtained evidence the material melting in the tracks for 10-11-10-10 s providing thereby fast diffusivities of the atoms. The thicker Si layers provide more excess Si to create the nanoclusters via a molten state diffusion.

High-temperature-stable and regenerable catalysts: platinum nanoparticles in aligned mesoporous silica wells.

PubMed

Xiao, Chaoxian; Maligal-Ganesh, Raghu V; Li, Tao; Qi, Zhiyuan; Guo, Zhiyong; Brashler, Kyle T; Goes, Shannon; Li, Xinle; Goh, Tian Wei; Winans, Randall E; Huang, Wenyu

2013-10-01

We report the synthesis, structural characterization, thermal stability study, and regeneration of nanostructured catalysts made of 2.9 nm Pt nanoparticles sandwiched between a 180 nm SiO2 core and a mesoporous SiO2 shell. The SiO2 shell consists of 2.5 nm channels that are aligned perpendicular to the surface of the SiO2 core. The nanostructure mimics Pt nanoparticles that sit in mesoporous SiO2 wells (Pt@MSWs). By using synchrotron-based small-angle X-ray scattering, we were able to prove the ordered structure of the aligned mesoporous shell. By using high-temperature cyclohexane dehydrogenation as a model reaction, we found that the Pt@MSWs of different well depths showed stable activity at 500 °C after the induction period. Conversely, a control catalyst, SiO2 -sphere-supported Pt nanoparticles without a mesoporous SiO2 shell (Pt/SiO2 ), was deactivated. We deliberately deactivated the Pt@MSWs catalyst with a 50 nm deep well by using carbon deposition induced by a low H2 /cyclohexane ratio. The deactivated Pt@MSWs catalyst was regenerated by calcination at 500 °C with 20 % O2 balanced with He. After the regeneration treatments, the activity of the Pt@MSWs catalyst was fully restored. Our results suggest that the nanostructured catalysts-Pt nanoparticles confined inside mesoporous SiO2 wells-are stable and regenerable for treatments and reactions that require high temperatures. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preparation and Characterization of Thermoresponsive Poly(N-isopropylacrylamide-co-acrylic acid)-Grafted Hollow Fe3O4/SiO2 Microspheres with Surface Holes for BSA Release

PubMed Central

Zhao, Jing; Zeng, Ming; Zheng, Kaiqiang; He, Xinhua; Xie, Minqiang; Fu, Xiaoyi

2017-01-01

Thermoresponsive P(NIPAM-AA)/Fe3O4/SiO2 microspheres with surface holes serving as carriers were prepared using p-Fe3O4/SiO2 microspheres with a thermoresponsive copolymer. The p-Fe3O4/SiO2 microspheres was obtained using a modified Pickering method and chemical etching. The surface pore size of p-Fe3O4/SiO2 microspheres was in the range of 18.3 nm~37.2 nm and the cavity size was approximately 60 nm, which are suitable for loading and transporting biological macromolecules. P(NIPAM-AA) was synthesized inside and outside of the p-Fe3O4/SiO2 microspheres via atom transfer radical polymerization of NIPAM, MBA and AA. The volume phase transition temperature (VPTT) of the specifically designed P(NIPAM-AA)/Fe3O4/SiO2 microspheres was 42.5 °C. The saturation magnetization of P(NIPAM-AA)/Fe3O4/SiO2 microspheres was 72.7 emu/g. The P(NIPAM-AA)/Fe3O4/SiO2 microspheres were used as carriers to study the loading and release behavior of BSA. This microsphere system shows potential for the loading of proteins as a drug delivery platform. PMID:28772770

Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence

PubMed Central

Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

2015-01-01

Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application. PMID:25676089

Measuring the refractive index of highly crystalline monolayer MoS2 with high confidence.

PubMed

Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

2015-02-13

Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application.

Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence

NASA Astrophysics Data System (ADS)

Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

2015-02-01

Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application.

Role of N-methyl-2-pyrrolidone for preparation of Fe3O4@SiO2 controlled the shell thickness

NASA Astrophysics Data System (ADS)

Wee, Sung-Bok; Oh, Hyeon-Cheol; Kim, Tae-Gyun; An, Gye-Seok; Choi, Sung-Churl

2017-04-01

We developed a simple and novel approach for the synthesis of Fe3O4@SiO2 nanoparticles with controlled shell thickness, and studied the mechanism. The introduction of N-methyl-2-pyrrolidone (NMP) led to trapping of monomer nuclei in single shell and controlled the shell thickness. Fe3O4@SiO2 controlled the shell thickness, showing a high magnetization value (64.47 emu/g). Our results reveal the role and change in the chemical structure of NMP during the core-shell synthesis process. NMP decomposed to 4-aminobutanoic acid in alkaline condition and decreased the hydrolysis rate of the silica coating process.

Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

NASA Astrophysics Data System (ADS)

Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

2018-03-01

Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

Large-scale synthesis and photoluminescence of single-crystalline β-Ga 2O 3 nanobelts

NASA Astrophysics Data System (ADS)

Geng, Baoyou; Zhang, Lide; Meng, Guowen; Xie, Ting; Peng, Xinsheng; Lin, Yu

2003-12-01

Gallium oxide ( β-Ga 2O 3) nanobelts were synthesized on a large scale by a simple thermal evaporation method from a mixture of gallium (Ga) and silicon oxide (SiO 2) nanopowder at 850°C in argon atmosphere, which is 200-300°C less than that of thermal evaporation methods reported formerly. The nanobelts had a uniform single-crystal monoclinic structure with width ranging from 50 to 300 nm, thickness about 10-20 nm and lengths up to several tens or hundreds of micrometers. The growth of β-Ga 2O 3 nanobelts is controlled by vapor-solid crystal growth mechanism. Photoluminescence measurement shows that the nanobelts have one broad, strong blue emission and a UV emission.

Tunable broadband near-infrared absorber based on ultrathin phase-change material

NASA Astrophysics Data System (ADS)

Hu, Er-Tao; Gu, Tong; Guo, Shuai; Zang, Kai-Yan; Tu, Hua-Tian; Yu, Ke-Han; Wei, Wei; Zheng, Yu-Xiang; Wang, Song-You; Zhang, Rong-Jun; Lee, Young-Pak; Chen, Liang-Yao

2017-11-01

In this work, a tunable broadband near-infrared light absorber was designed and fabricated with a simple and lithography free approach by introducing an ultrathin phase-change material Ge2Sb2Te5 (GST) layer into the metal-dielectric multilayered film structure with the structure parameters as that: SiO2 (72.7 nm)/Ge2Sb2Te5 (6.0 nm)/SiO2 (70.2 nm)/Cu (>100.0 nm). The film structure exhibits a modulation depth of ∼72.6% and an extinction ratio of ∼8.8 dB at the wavelength of 1410 nm. The high light absorption (95%) of the proposed film structure at the wavelength of 450 nm in both of the amorphous and crystalline phase of GST, indicates that the intensity of the reflectance in the infrared region can be rapidly tuned by the blue laser pulses. The proposed planar layered film structure with layer thickness as the only controllable parameter and large reflectivity tuning range shows the potential for practical applications in near-infrared light modulation and absorption.

Selective Deposition of SiO2 on Ion Conductive Area of Soda-lime Glass Surface

PubMed Central

Sakai, Daisuke; Harada, Kenji; Hara, Yuichiro; Ikeda, Hiroshi; Funatsu, Shiro; Uraji, Keiichiro; Suzuki, Toshio; Yamamoto, Yuichi; Yamamoto, Kiyoshi; Ikutame, Naoki; Kawaguchi, Keiga; Kaiju, Hideo; Nishii, Junji

2016-01-01

Selective deposition of SiO2 nanoparticles was demonstrated on a soda-lime glass surface with a periodic sodium deficient pattern formed using the electrical nanoimprint. Positively charged SiO2 particles generated using corona discharge in a cyclic siloxane vapor, were selectively deposited depending on the sodium pattern. For such phenomena to occur, the sodium ion migration to the cathode side was indispensable to the electrical charge compensation on the glass surface. Therefore, the deposition proceeded preferentially outside the alkali-deficient area. Periodic SiO2 structures with 424 nm and 180 nm heights were obtained using one-dimensional (6 μm period) and two-dimensional (500 nm period) imprinted patterns. PMID:27291796

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

NASA Astrophysics Data System (ADS)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Superstrong encapsulated monolayer graphene by the modified anodic bonding.

PubMed

Jung, Wonsuk; Yoon, Taeshik; Choi, Jongho; Kim, Soohyun; Kim, Yong Hyup; Kim, Taek-Soo; Han, Chang-Soo

2014-01-07

We report a superstrong adhesive of monolayer graphene by modified anodic bonding. In this bonding, graphene plays the role of a superstrong and ultra-thin adhesive between SiO2 and glass substrates. As a result, monolayer graphene presented a strong adhesion energy of 1.4 J m(-2) about 310% that of van der Waals bonding (0.45 J m(-2)) to SiO2 and glass substrates. This flexible solid state graphene adhesive can tremendously decrease the adhesive thickness from about several tens of μm to 0.34 nm for epoxy or glue at the desired bonding area. As plausible causes of this superstrong adhesion, we suggest conformal contact with the rough surface of substrates and generation of C-O chemical bonding between graphene and the substrate due to the bonding process, and characterized these properties using optical microscopy, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

NASA Technical Reports Server (NTRS)

Park, C.; Fujiwara, T.

1978-01-01

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

Properties of chirped mirrors manufactured by plasma ion assisted electron beam evaporation

NASA Astrophysics Data System (ADS)

Bischoff, Martin; Stenzel, Olaf; Gäbler, Dieter; Kaiser, Norbert

2005-09-01

Nowadays, chirped dielectric mirrors for ultrafast optics and laser applications are usually manufactured by sputtering techniques. The suitability of Advanced Plasma Source (APS) assisted electron beam evaporation with respect to such coatings is still under investigation. The purpose of this presentation is to show our first results of the deposition of chirped layers produced by plasma ion assisted electron beam evaporation and of the investigation of their properties. The aim was to design and prepare a NIR-mirror for the spectral range of 700 nm to 900 nm. It has been attempted to find a design that is robust with respect to errors of thickness and refractive index. The mirror consists of more than 26 layers composed of alternating high- (Nb2O5) and low-refractive index (SiO2) material. The deposited coatings were tested in terms of their group delay dispersion (GDD) and their reflectivity. We show, that in the wavelength range between 720 nm and 890 nm the GDD exhibits a value of about -50 fs2, whereas the reflectivity is above 99%. However, the subsequent reverse engineering operations show a relatively large thickness error of more than 1% - 2% regarding the particular layers. Nevertheless the effect on the GDD and the reflectivity is tolerable. Furthermore, we present our first experiments concerning the design and fabrication of a chirped mirror, which allows controlling the third order dispersion (TOD), whereas the relative thickness error of the particular layers should not exceed 1%.

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

NASA Astrophysics Data System (ADS)

Watanabe, Kenta; Terashima, Daiki; Nozaki, Mikito; Yamada, Takahiro; Nakazawa, Satoshi; Ishida, Masahiro; Anda, Yoshiharu; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-06-01

Stacked gate dielectrics consisting of wide bandgap SiO2 insulators and thin aluminum oxynitride (AlON) interlayers were systematically investigated in order to improve the performance and reliability of AlGaN/GaN metal–oxide–semiconductor (MOS) devices. A significantly reduced gate leakage current compared with that in a single AlON layer was achieved with these structures, while maintaining the superior thermal stability and electrical properties of the oxynitride/AlGaN interface. Consequently, distinct advantages in terms of the reliability of the gate dielectrics, such as an improved immunity against electron injection and an increased dielectric breakdown field, were demonstrated for AlGaN/GaN MOS capacitors with optimized stacked structures having a 3.3-nm-thick AlON interlayer.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

NASA Astrophysics Data System (ADS)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

In Vitro and In Vivo Short-Term Pulmonary Toxicity of Differently Sized Colloidal Amorphous SiO2

PubMed Central

Wiemann, Martin; Sauer, Ursula G.; Vennemann, Antje; Bäcker, Sandra; Keller, Johannes-Georg; Ma-Hock, Lan; Wohlleben, Wendel; Landsiedel, Robert

2018-01-01

In vitro prediction of inflammatory lung effects of well-dispersed nanomaterials is challenging. Here, the in vitro effects of four colloidal amorphous SiO2 nanomaterials that differed only by their primary particle size (9, 15, 30, and 55 nm) were analyzed using the rat NR8383 alveolar macrophage (AM) assay. Data were compared to effects of single doses of 15 nm and 55 nm SiO2 intratracheally instilled in rat lungs. In vitro, all four elicited the release of concentration-dependent lactate dehydrogenase, β-glucuronidase, and tumor necrosis factor alpha, and the two smaller materials also released H2O2. All effects were size-dependent. Since the colloidal SiO2 remained well-dispersed in serum-free in vitro conditions, effective particle concentrations reaching the cells were estimated using different models. Evaluating the effective concentration–based in vitro effects using the Decision-making framework for the grouping and testing of nanomaterials, all four nanomaterials were assigned as “active.” This assignment and the size dependency of effects were consistent with the outcomes of intratracheal instillation studies and available short-term rat inhalation data for 15 nm SiO2. The study confirms the applicability of the NR8383 AM assay to assessing colloidal SiO2 but underlines the need to estimate and consider the effective concentration of such well-dispersed test materials. PMID:29534009

Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2015-12-01

Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H- and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields Eox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n+ -polySi) gate serving as the anode as well as in the bulk silicon dioxide (SiO2) film via hot-electron initiated band-to-band ionization (BTBI). In absence of oxide trapped charges, it is shown that at a given temperature, the hole injection rates from either of the above two mechanisms are higher in n-4H-SiC MOS devices than those in n-6H-SiC MOS structures when compared at a given Eox and SiO2 thickness (tox). On the other hand, relative to n-4H-SiC devices, n-6H-SiC structures exhibit higher hole injection rates for a given tox during substrate electron injection at a given FN current density je,FN throughout the temperature range studied here. These two observations clearly reveal that the substrate material (n-6H-SiC and n-4H-SiC) dependencies on time-to-breakdown (tBD) or injected charge (electron) to breakdown (QBD) of the SiO2 film depend on the mode of FN injections (constant field/voltage and current) from the substrate which is further verified from the rigorous device simulation as well.

Template-etching route to construct uniform rattle-type Fe3O4@SiO2 hollow microspheres as drug carrier.

PubMed

Cheng, Lin; Liu, Yuanyuan; Zou, Bingfang; Yu, Yong; Ruan, Weimin; Wang, Yongqiang

2017-06-01

Template-etching strategy was put forward to synthesize rattle-type magnetic silica (Fe 3 O 4 @SiO 2 ) hollow microspheres in a controlled way. During the experiment, monodisperse Fe 2 O 3 microspheres were fabricated as physical template to generate uniform Fe 2 O 3 @SiO 2 with controlled shell thicknesses through sol-gel method, and the subsequent Fe 2 O 3 template etching process created variable space between Fe 2 O 3 core and SiO 2 shell, and the final calcination process transformed rattle-type Fe 2 O 3 @SiO 2 hollow microspheres into corresponding Fe 3 O 4 @SiO 2 product in hydrogen/nitrogen atmosphere. Compared with traditional physical template, here template-etching synthesis of rattle-type hollow microspheres saved the insertion of middle shells and their removal, which simplified the synthesis process with controllable core size and shell thickness. The rattle-type Fe 3 O 4 @SiO 2 hollow microspheres as drug carrier show efficient doxorubicin (DOX) loading, and the release rate of DOX loaded the rattle-type Fe 3 O 4 @SiO 2 hollow microspheres exhibit a surprising shell-thickness-dependent and a pH responsive drug release features. Additionally, MTT assays in HeLa cells demonstrated that the Fe 3 O 4 @SiO 2 nanocarriers were non-toxic even at the concentration of 250µgmL -1 for 48h. Thus, our results revealed that the Fe 3 O 4 @SiO 2 -DOX could play an important role in the development of intracellular delivery nanodevices for cancer therapy. Copyright © 2017. Published by Elsevier B.V.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low- k Films: A Surface Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-07-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low- k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low- k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low- k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Plasmonic properties of Ag nanoparticles embedded in GeO2-SiO2 matrix by atom beam sputtering.

PubMed

Mohapatra, Satyabrata

2016-02-07

Nanocomposite thin films containing Ag nanoparticles embedded in the GeO2-SiO2 matrix were synthesized by the atom beam co-sputtering technique. The structural, optical and plasmonic properties and the chemical composition of the nanocomposite thin films were studied by transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDX), UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). UV-visible absorption studies on Ag-SiO2 nanocomposites revealed the presence of a strong localized surface plasmon resonance (LSPR) peak characteristic of Ag nanoparticles at 413 nm, which showed a blue shift of 26 nm (413 to 387 nm) along with a significant broadening and drastic decrease in intensity with the incorporation of 16 at% of Ge into the SiO2 matrix. TEM studies on Ag-GeO2-SiO2 nanocomposite thin films confirmed the presence of Ag nanoparticles with an average size of 3.8 nm in addition to their aggregates with an average size of 16.2 nm. Thermal annealing in air resulted in strong enhancement in the intensity of the LSPR peak, which showed a regular red shift of 51 nm (from 387 to 438 nm) with the increase in annealing temperature up to 500 °C. XPS studies showed that annealing in air resulted in oxidation of excess Ge atoms in the nanocomposite into GeO2. Our work demonstrates the possibility of controllably tuning the LSPR of Ag nanoparticles embedded in the GeO2-SiO2 matrix by single-step thermal annealing, which is interesting for optical applications.

Investigation of photolithography process on SPOs for the Athena mission

NASA Astrophysics Data System (ADS)

Massahi, S.; Girou, D. A.; Ferreira, D. D. M.; Christensen, F. E.; Jakobsen, A. C.; Shortt, B.; Collon, M.; Landgraf, B.

2015-09-01

As part of the ongoing effort to optimize the throughput of the Athena optics we have produced mirrors with a state-of-the-art cleaning process. We report on the studies related to the importance of the photolithographic process. Pre-coating characterization of the mirrors has shown and still shows photoresist remnants on the SiO2- rib bonding zones, which influences the quality of the metallic coating and ultimately the mirror performance. The size of the photoresist remnants is on the order of 10 nm which is about half the thickness of final metallic coating. An improved photoresist process has been developed including cleaning with O2 plasma in order to remove the remaining photoresist remnants prior to coating. Surface roughness results indicate that the SiO2-rib bonding zones are as clean as before the photolithography process is performed.

Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

2018-02-01

In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

DOE PAGES

Keech, Ryan; Morandi, Carl; Wallace, Margeaux; ...

2017-04-11

Continued reduction in length scales associated with many ferroelectric film-based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) thin films were studied over the thickness range of 100-350 nm for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO 3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO 2/SiO 2/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at highmore » fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC-biased and temperature dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.« less

NbN superconducting nanowire single-photon detector fabricated on MgF2 substrate

NASA Astrophysics Data System (ADS)

Wu, J. J.; You, L. X.; Zhang, L.; Zhang, W. J.; Li, H.; Liu, X. Y.; Zhou, H.; Wang, Z.; Xie, X. M.; Xu, Y. X.; Fang, W.; Tong, L. M.

2016-06-01

The performance of superconducting nanowire single-photon detectors (SNSPDs) relies on substrate materials. Magnesium fluoride (MgF2) exhibits outstanding optical properties, such as large optical transmission range and low refractive index (n = 1.38), making it an attractive substrate. We present the fabrication and the performance of SNSPDs made of a 4.5 nm thick NbN thin film deposited on MgF2 substrate for the wavelength of 1550 nm. The front-side illuminated SNSPDs without an optical cavity showed a maximal detection efficiency of 12.8% at a system dark count rate (DCR) of 100 Hz, while the backside illuminated SNSPDs with a SiO2/Au optical cavity atop displayed a maximal detection efficiency of 33% at a DCR of 100 Hz.

Preparation of SiC/SiO2 core-shell nanowires via molten salt mediated carbothermal reduction route

NASA Astrophysics Data System (ADS)

Zhang, Ju; Yan, Shuai; Jia, Quanli; Huang, Juntong; Lin, Liangxu; Zhang, Shaowei

2016-06-01

The growth of silicon carbide (SiC) crystal generally requires a high temperature, especially when low quality industrial wastes are used as the starting raw materials. In this work, SiC/SiO2 core-shell nanowires (NWs) were synthesized from low cost silica fume and sucrose via a molten salt mediated carbothermal reduction (CR) route. The molten salt was found to be effective in promoting the SiC growth and lowering the synthesis temperature. The resultant NWs exhibited a heterostructure composed of a 3C-SiC core of 100 nm in diameter and a 5-10 nm thick amorphous SiO2 shell layer. The photoluminescence spectrum of the achieved SiC NWs displayed a significant blue shift (a dominant luminescence at round 422 nm), which suggested that they were high quality and could be a promising candidate material for future optoelectronic applications.

Ultra-high sensitive substrates for surface enhanced Raman scattering, made of 3 nm gold nanoparticles embedded on SiO2 nanospheres

NASA Astrophysics Data System (ADS)

Phatangare, A. B.; Dhole, S. D.; Dahiwale, S. S.; Bhoraskar, V. N.

2018-05-01

The surface properties of substrates made of 3 nm gold nanoparticles embedded on SiO2 nanospheres enabled fingerprint detection of thiabendazole (TBZ), crystal violet (CV) and 4-Aminothiophenol (4-ATP) at an ultralow concentration of ∼10-18 M by surface enhanced Raman spectroscopy (SERS). Gold nanoparticles of an average size of ∼3 nm were synthesized and simultaneously embedded on SiO2 nanospheres by the electron irradiation method. The substrates made from the 3 nm gold nanoparticles embedded on SiO2 nanospheres were successfully used for recording fingerprint SERS spectra of TBZ, CV and 4-ATP over a wide range of concentrations from 10-6 M to 10-18 M using 785 nm laser. The unique features of these substrates are roughness near the surface due to the inherent structural defects of 3 nm gold nanoparticles, nanogaps of ≤ 1 nm between the embedded nanoparticles and their high number. These produced an abundance of nanocavities which act as active centers of hot-spots and provided a high electric field at the reporter molecules and thus an enhancement factor required to record the SERS spectra at ultra low concentration of 10-18 M. The SERS spectra recorded by the substrates of 4 nm and 6 nm gold nanoparticles are discussed.

High transconductance zinc oxide thin-film transistors on flexible plastic substrates

NASA Astrophysics Data System (ADS)

Kimura, Yuta; Higaki, Tomohiro; Maemoto, Toshihiko; Sasa, Shigehiko; Inoue, Masataka

2012-02-01

We report the fabrication and characterization on high-performance ZnO based TFTs on unheated plastic substrate. ZnO films were grown by pulsed laser deposition (PLD) on polyethylene napthalate (PEN) substrates. Top-gate ZnO-TFTs were fabricated by photolithography and wet chemical etching. The source and drain contacts were formed by lift-off of e-beam deposited Ti(20 nm)/Au(200 nm). An HfO2 with thickness 100 nm was selected as the gate insulator, and top gate electrode Ti(20 nm)/Au(200 nm) was deposited by e-beam evaporation. We prepared a set of the structure with SiO2/TiO2 to investigate the characteristic changes that appear in the film characteristics in response to bending. From the ID-VDS and the transfer characteristics which are affected by bending and return for the ZnO-TFT with SiO2/TiO2 buffers, the TFTs were bent to a curvature radius of 8.5 mm. The transconductance, gm is obtained 1.7 mS/mm on flat, 1.4 mS/mm on bending and 1.3 mS/mm on returning the film, respectively. The ID-VDS characteristics were therefore not changed by bending. All of the devices exhibited a clear pinch-off behavior and a high on/off current ratio of ˜10^6. The threshold voltages, Vth were not changed drastically. Furthermore, TFT structures were changed from a conventional top-gate type to a bottom-gate type. A high transconductance of 95.8 mS/mm was achieved in the bottom-gate type TFT by using Al2O3 oxide buffer.

Unexpected behavior of ultra-thin films of blends of polystyrene/poly(vinyl methyl ether) studied by specific heat spectroscopy

NASA Astrophysics Data System (ADS)

Madkour, Sherif; Szymoniak, Paulina; Schick, Christoph; Schönhals, Andreas

2017-05-01

Specific heat spectroscopy (SHS) employing AC nanochip calorimetry was used to investigate the glassy dynamics of ultra-thin films (thicknesses: 10 nm-340 nm) of a polymer blend, which is miscible in the bulk. In detail, a Poly(vinyl methyl ether) (PVME)/Polystyrene (PS) blend with the composition of 25/75 wt. % was studied. The film thickness was controlled by ellipsometry while the film topography was checked by atomic force microscopy. The results are discussed in the framework of the balance between an adsorbed and a free surface layer on the glassy dynamics. By a self-assembling process, a layer with a reduced mobility is irreversibly adsorbed at the polymer/substrate interface. This layer is discussed employing two different scenarios. In the first approach, it is assumed that a PS-rich layer is adsorbed at the substrate. Whereas in the second approach, a PVME-rich layer is suggested to be formed at the SiO2 substrate. Further, due to the lower surface tension of PVME, with respect to air, a nanometer thick PVME-rich surface layer, with higher molecular mobility, is formed at the polymer/air interface. By measuring the glassy dynamics of the thin films of PVME/PS in dependence on the film thickness, it was shown that down to 30 nm thicknesses, the dynamic Tg of the whole film was strongly influenced by the adsorbed layer yielding a systematic increase in the dynamic Tg with decreasing the film thickness. However, at a thickness of ca. 30 nm, the influence of the mobile surface layer becomes more pronounced. This results in a systematic decrease in Tg with the further decrease of the film thickness, below 30 nm. These results were discussed with respect to thin films of PVME/PS blend with a composition of 50/50 wt. % as well as literature results.

Large-scale synthesis of NbS2 nanosheets with controlled orientation on graphene by ambient pressure CVD.

PubMed

Ge, Wanyin; Kawahara, Kenji; Tsuji, Masaharu; Ago, Hiroki

2013-07-07

We report ambient pressure chemical vapor deposition (CVD) growth of single-crystalline NbS2 nanosheets with controlled orientation. On Si and SiO2 substrates, NbS2 nanosheets grow almost perpendicular to the substrate surface. However, when we apply transferred CVD graphene on SiO2 as a substrate, NbS2 sheets grow laterally lying on the graphene. The NbS2 sheets show the triangular and hexagonal shapes with a thickness of about 20-200 nm and several micrometres in the lateral dimension. Analyses based on X-ray diffraction and Raman spectroscopy indicate that the NbS2 nanosheets are single crystalline 3R-type with a rhombohedral structure of R3m space group. Our findings on the formation of highly aligned NbS2 nanosheets on graphene give new insight into the formation mechanism of NbS2 and would contribute to the templated growth of various layered materials.

Strategy for Enhanced Light Output from Luminescent Nanoparticles

DTIC Science & Technology

2013-03-01

Fabrication and scintillation response of rare earth doped transparent ceramics”, 2010 Glass & Optical Materials Division Annual Meeting of the...5 Self-assembled, almond-shaped colloidal GdVO4:Eu 3+ nanocrystals ~60 nm long and ~10 nm wide were synthesized in aqueous solutions. The as...t SiO2 =6nm) Core/Triple-shell (t SiO2 =17nm) Fig. 10 Nanocomposites (1 vol%) consisting of a silica core with a Gd2O3:Eu 3+ luminescent single

Fabrication and characterization of TiO2/SiO2 based Bragg reflectors for light trapping applications

NASA Astrophysics Data System (ADS)

Dubey, R. S.; Ganesan, V.

Distributed Bragg reflectors (DBRs) have received an intensive attention due to their increasing demand in optoelectronic and photonic devices. Such reflectors are capable to prohibit the light propagation within the specified wavelength range of interest. In this paper, we present the fabrication of TiO2/SiO2 stacks based Bragg reflectors by using a simple and in-expensive sol-gel spin coating technique. The prepared single-layer thin films of TiO2 and SiO2 onto glass substrates were characterized for their optical constants. By tuning the process parameters, one-seven DBR stacks of TiO2/SiO2 were prepared. The corresponding shift of the Bragg reflection peak was observed with the increased number of DBR stacks and as much as about 90% reflectance is observed from the 7DBR stacks. The experimentally measured reflectance was compared with the simulated one, which showed good in agreement. FESEM measurement has confirmed the formation of bright and dark strips of TiO2 and SiO2 films with their thicknesses 80 and 115 nm respectively. The simulation study was explored to a design of thin film silicon solar cell using 7DBR stacks. An enhancement in light absorption in the visible wavelength range is observed which coincides with the experimental result of the reflectance. The use of DBR at the bottom of the solar cell could felicitate the better light harvesting with the occurrence of Fabry-Perot resonances in the absorbing layer.

Tribological and Corrosion Properties of Coatings Produced by Plasma Electrolytic Oxidation on the ZA27 Alloy

NASA Astrophysics Data System (ADS)

Li, Guangyin; Mao, Yifan; Li, Zhijian; Wang, Linlin; DaCosta, Herbert

2018-05-01

In this paper, a continuous and dense coating was deposited on samples of the ZA27 alloy through the plasma electrolytic oxidation (PEO) process to improve its wear and corrosion performance. A nontoxic and environmentally friendly inorganic salt, Na2SiO3, is chosen as electrolytes with different concentrations. The effect of the concentration of Na2SiO3 aqueous solutions on the coating performances was investigated. The coatings with 3Al2O3·2SiO2 (mullite), Zn2SiO4 and Al2O3 (either crystal phase or with some amorphous SiO2 phases) were formed by the PEO processes. It was found that the coating thickness increased with the increase in electrolyte concentration. However, the wear and corrosion resistance performance of the coatings did not improve as the coating's thickness increased. This was due to the fact that the coating produced with electrolytes of 10 g/L has a porous structure with large pore size. Among all the samples, coating produced by 15 g/L Na2SiO3 has the best wear and corrosion resistance, which is attributed to its continuous and dense structure with thickness of about 47 μm.

Tribological and Corrosion Properties of Coatings Produced by Plasma Electrolytic Oxidation on the ZA27 Alloy

NASA Astrophysics Data System (ADS)

Li, Guangyin; Mao, Yifan; Li, Zhijian; Wang, Linlin; DaCosta, Herbert

2018-04-01

In this paper, a continuous and dense coating was deposited on samples of the ZA27 alloy through the plasma electrolytic oxidation (PEO) process to improve its wear and corrosion performance. A nontoxic and environmentally friendly inorganic salt, Na2SiO3, is chosen as electrolytes with different concentrations. The effect of the concentration of Na2SiO3 aqueous solutions on the coating performances was investigated. The coatings with 3Al2O3·2SiO2 (mullite), Zn2SiO4 and Al2O3 (either crystal phase or with some amorphous SiO2 phases) were formed by the PEO processes. It was found that the coating thickness increased with the increase in electrolyte concentration. However, the wear and corrosion resistance performance of the coatings did not improve as the coating's thickness increased. This was due to the fact that the coating produced with electrolytes of 10 g/L has a porous structure with large pore size. Among all the samples, coating produced by 15 g/L Na2SiO3 has the best wear and corrosion resistance, which is attributed to its continuous and dense structure with thickness of about 47 μm.

SiO2-Ag-SiO2 core/shell structure with a high density of Ag nanoparticles for CO oxidation catalysis.

PubMed

Feng, Xiaoqian; Li, Hongmo; Zhang, Qing; Zhang, Peng; Song, Xuefeng; Liu, Jing; Zhao, Liping; Gao, Lian

2016-11-11

SiO 2 -Ag-SiO 2 , a sandwiched core/shell structure with a layer of Ag nanoparticles (∼4 nm) encapsulated between a shallow SiO 2 surface layer and a SiO 2 submicrosphere substrate (∼200 nm), has been synthesized from [Formula: see text] and SiO 2 spheres by a facile one-pot hydrothermal method. The composite is proposed to result from the dynamic balance between the [Formula: see text] reduction and the dissolution-redeposition of SiO 2 in mild basic media. The synthetic mechanism and the roles of the reaction time, temperature, and the amount of ammonia in the formation of this unique structure are investigated and discussed. The composite structure shows superior catalytic performance in CO oxidation to the control Ag/SiO 2 structure prepared by impregnation. Pre-treatment by O 2 at 600 °C significantly improves the catalytic performance of the composite structure and preserves the nanocomposite structure well.

Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties.

PubMed

Nebogatikova, N A; Antonova, I V; Prinz, V Ya; Kurkina, I I; Vdovin, V I; Aleksandrov, G N; Timofeev, V B; Smagulova, S A; Zakirov, E R; Kesler, V G

2015-05-28

In the present study, we have examined the interaction between a suspension of graphene in dimethylformamide and an aqueous solution of hydrofluoric acid, which was found to result in partial fluorination of suspension flakes. A considerable decrease in the thickness and lateral size of the graphene flakes (up to 1-5 monolayers in thickness and 100-300 nm in diameter) with increasing duration of fluorination treatment is found to be accompanied by a simultaneous transition of the flakes from the conducting to the insulating state. Smooth and uniform insulating films with a roughness of ∼2 nm and thicknesses down to 20 nm were deposited from the suspension on silicon. The electrical and structural properties of the films suggest their use as insulating elements in thin-film nano- and microelectronic device structures. In particular, it was found that the films prepared from the fluorinated suspension display rather high breakdown voltages (field strength of (1-3) × 10(6) V cm(-1)), ultralow densities of charges in the film and at the interface with the silicon substrate in metal-insulator-semiconductor structures (∼(1-5) × 10(10) cm(-2)). Such excellent characteristics of the dielectric film can be compared only to well-developed SiO2 layers. The films from the fluorinated suspension are cheap, practically feasible and easy to produce.

Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

NASA Astrophysics Data System (ADS)

Qiu, Fei; Xu, Zhimou

2009-08-01

In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

Comprehensive In Vitro Toxicity Testing of a Panel of Representative Oxide Nanomaterials: First Steps towards an Intelligent Testing Strategy

PubMed Central

Farcal, Lucian; Torres Andón, Fernando; Di Cristo, Luisana; Rotoli, Bianca Maria; Bussolati, Ovidio; Bergamaschi, Enrico; Mech, Agnieszka; Hartmann, Nanna B.; Rasmussen, Kirsten; Riego-Sintes, Juan; Ponti, Jessica; Kinsner-Ovaskainen, Agnieszka; Rossi, François; Oomen, Agnes; Bos, Peter; Chen, Rui; Bai, Ru; Chen, Chunying; Rocks, Louise; Fulton, Norma; Ross, Bryony; Hutchison, Gary; Tran, Lang; Mues, Sarah; Ossig, Rainer; Schnekenburger, Jürgen; Campagnolo, Luisa; Vecchione, Lucia; Pietroiusti, Antonio; Fadeel, Bengt

2015-01-01

Nanomaterials (NMs) display many unique and useful physico-chemical properties. However, reliable approaches are needed for risk assessment of NMs. The present study was performed in the FP7-MARINA project, with the objective to identify and evaluate in vitro test methods for toxicity assessment in order to facilitate the development of an intelligent testing strategy (ITS). Six representative oxide NMs provided by the EC-JRC Nanomaterials Repository were tested in nine laboratories. The in vitro toxicity of NMs was evaluated in 12 cellular models representing 6 different target organs/systems (immune system, respiratory system, gastrointestinal system, reproductive organs, kidney and embryonic tissues). The toxicity assessment was conducted using 10 different assays for cytotoxicity, embryotoxicity, epithelial integrity, cytokine secretion and oxidative stress. Thorough physico-chemical characterization was performed for all tested NMs. Commercially relevant NMs with different physico-chemical properties were selected: two TiO2 NMs with different surface chemistry – hydrophilic (NM-103) and hydrophobic (NM-104), two forms of ZnO – uncoated (NM-110) and coated with triethoxycapryl silane (NM-111) and two SiO2 NMs produced by two different manufacturing techniques – precipitated (NM-200) and pyrogenic (NM-203). Cell specific toxicity effects of all NMs were observed; macrophages were the most sensitive cell type after short-term exposures (24-72h) (ZnO>SiO2>TiO2). Longer term exposure (7 to 21 days) significantly affected the cell barrier integrity in the presence of ZnO, but not TiO2 and SiO2, while the embryonic stem cell test (EST) classified the TiO2 NMs as potentially ‘weak-embryotoxic’ and ZnO and SiO2 NMs as ‘non-embryotoxic’. A hazard ranking could be established for the representative NMs tested (ZnO NM-110 > ZnO NM-111 > SiO2 NM-203 > SiO2 NM-200 > TiO2 NM-104 > TiO2 NM-103). This ranking was different in the case of embryonic tissues, for which TiO2 displayed higher toxicity compared with ZnO and SiO2. Importantly, the in vitro methodology applied could identify cell- and NM-specific responses, with a low variability observed between different test assays. Overall, this testing approach, based on a battery of cellular systems and test assays, complemented by an exhaustive physico-chemical characterization of NMs, could be deployed for the development of an ITS suitable for risk assessment of NMs. This study also provides a rich source of data for modeling of NM effects. PMID:25996496

Design and manufacture of super-multilayer optical filters based on PARMS technology

NASA Astrophysics Data System (ADS)

Lü, Shaobo; Wang, Ruisheng; Ma, Jing; Jiang, Chao; Mu, Jiali; Zhao, Shuaifeng; Yin, Xiaojun

2018-04-01

Three multilayer interference optical filters, including a UV band-pass, a VIS dual-band-pass and a notch filter, were designed by using Ta2O5, Nb2O5, Al2O3 and SiO2 as high- and low-index materials. During the design of the coating process, a hybrid optical monitoring and RATE-controlled layer thickness control scheme was adopted. The coating process was simulated by using the optical monitoring system (OMS) Simulator, and the simulation result indicated that the layer thickness can be controlled within an error of less than ±0.1%. The three filters were manufactured on a plasma-assisted reactive magnetic sputtering (PARMS) coating machine. The measurements indicate that for the UV band-pass filter, the peak transmittance is higher than 95% and the blocking density is better than OD6 in the 300-1100 nm region, whereas for the dual-band-pass filter, the center wavelength positioning accuracy of the two passbands are less than ±2 nm, the peak transmittance is higher than 95% and blocking density is better than OD6 in the 300-950 nm region. Finally, for the notch filter, the minimum transmittance rates are >90% and >94% in the visible and near infrared, respectively, and the blocking density is better than OD5.5 at 808 nm.

Effects of surface passivation dielectrics on carrier transport in AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Oh, Sejoon; Jang, Han-Soo; Choi, Chel-Jong; Cho, Jaehee

2018-04-01

Dielectric layers prepared by different deposition methods were used for the surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the corresponding electrical characteristics were examined. Increases in the sheet charge density and the maximum drain current by approximately 45% and 28%, respectively, were observed after the deposition of a 100 nm-thick SiO2 layer by plasma-enhanced chemical vapor deposition (PECVD) on the top of the AlGaN/GaN HFETs. However, SiO2 deposited by a radio frequency (rf) sputter system had the opposite effect. As the strain applied to AlGaN was influenced by the deposition methods used for the dielectric layers, the carrier transport in the two-dimensional electron gas formed at the interface between AlGaN and GaN was affected accordingly.

On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

NASA Astrophysics Data System (ADS)

Brady-Boyd, A.; O'Connor, R.; Armini, S.; Selvaraju, V.; Hughes, G.; Bogan, J.

2018-01-01

In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction of metallic manganese with a (3-trimethoxysilylpropyl)diethylenetriamine (DETA) self-assembled monolayer (SAM) on SiO2 and non-porous low-k dielectric materials. Subsequent deposition of a ∼0.5 nm thick Mn, followed by a 200 °C anneal results in the Mn diffusing through the SAM to interact with the underlying SiO2 layer to form a Mn-silicate layer. Furthermore, there is evidence that the Mn interacts with the carbon and nitrogen within the SAM to form Mn-carbide and Mn-nitride, respectively. When deposited on low-k materials the Mn is found to diffuse through to the SAM on deposition and interact both with the SAM and the underlying substrate in a similar fashion.

X-ray absorption spectroscopy to determine originating depth of electrons that form an inelastic background of Auger electron spectrum

NASA Astrophysics Data System (ADS)

Isomura, Noritake; Cui, Yi-Tao; Murai, Takaaki; Oji, Hiroshi; Kimoto, Yasuji

2017-07-01

In Auger electron spectroscopy (AES), the spectral background is mainly due to inelastic scattering of Auger electrons that lose their kinetic energy in a sample bulk. To investigate the spectral components within this background for SiO2(19.3 nm)/Si(100) with known layer thickness, X-ray absorption spectroscopy (XAS) was used in the partial-electron-yield (PEY) mode at several electron kinetic energies to probe the background of the Si KLL Auger peak. The Si K-edge PEY-XAS spectra constituted of both Si and SiO2 components at each kinetic energy, and their component fractions were approximately the same as those derived from the simulated AES background for the same sample structure. The contributions of Auger electrons originating from layers at different depths to the inelastic background could thus be identified experimentally.

Stress analysis of ZrO2/SiO2 multilayers deposited on different substrates with different thickness periods

NASA Astrophysics Data System (ADS)

Shao, Shuying; Shao, Jianda; He, Hongbo; Fan, Zhengxiu

2005-08-01

The effects of repeating thickness periods on stress are studied in ZrO2/SiO2 multilayers deposited by electron-beam evaporation on BK7 glass and fused-silica substrates. The results show that the residual stress is compressive and decreases with an increase of the periods of repeating thickness in the ZrO2/SiO2 multilayers. At the same time, the residual stress in multilayers deposited on BK7 glass is less than that of samples deposited on fused silica. The variation of the microstructure examined by x-ray diffraction shows that microscopic deformation does not correspond to macroscopic stress, which may be due to variation of the interface stress.

Size-tunable synthesis of SiO(2) nanotubes via a simple in situ templatelike process.

PubMed

Shen, Guozhen; Bando, Yoshio; Golberg, Dmitri

2006-11-23

SiO(2) nanotubes with tunable diameters and lengths have been successfully synthesized via a simple in situ templatelike process by thermal evaporation of SiO, ZnS, and GaN in a vertical induction furnace. The structure and morphologies were systematically investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectrometry. Studies found that both the diameters and lengths of the SiO(2) nanotubes can be effectively tuned by simply changing the reaction temperatures. The range of changes was from 30 nm (diameter) and several hundred micrometers (length) at 1450 degrees C to 100 nm (diameter) and 2-10 micrometers (length) at 1300 degrees C. Varying some other experimental parameters results in the formation of additional SiO(2)-based nanostructures, such as core-shell ZnS-SiO(2) nanocables, ZnS nanoparticle filled SiO(2) nanotubes, and fluffy SiO(2) spheres. Based on the observations, an in situ templatelike process was proposed to explain the possible growth mechanism.

Effect of silica surface coating on the luminescence lifetime and upconversion temperature sensing properties of semiconductor zinc oxide doped with gallium(III) and sensitized with rare earth ions Yb(III) and Tm(III).

PubMed

Li, Yuemei; Li, Yongmei; Wang, Rui; Zheng, Wei

2018-02-26

Optical sensing of temperature by measurement of the ratio of the intensities of the 700 nm emission and the 800 nm emission of Ga(III)-doped ZnO (GZO) nanoparticles (NPs) and of GZO NPs coated with a silica shell are demonstrated at 980 nm excitation. It is found that the relative sensitivity of SiO 2 @Yb/Tm/GZO is 6.2% K -1 at a temperature of 693 K. This is ~3.4 times higher than that of Yb/Tm/GZO NPs. Obviously, the SiO 2 shell structure decreases the rate of the nonradiative decay. The decay time of the 800 nm emission of the Yb/Tm/GZO NPs (15 mol% Ga; 7 mol% Yb; 0.5 mol% Tm) displays a biexponential decay with a dominant decay time of 148 μs and a second decay time of ~412 μs. The lifetime of the Yb/Tm/GZO NPs at 293 K, and of the SiO 2 @Yb/Tm/GZO NPs are ~412 μs. Both the Yb/Tm/GZO and SiO 2 @Yb/Tm/GZO can be used up to 693 K. These results indicate that the SiO 2 shell on the Yb/Tm/GZO is beneficial in terms of sensitivity and resolution. Graphical abstract The enhancement the decay time and thermal sensitivity in the SiO 2 @Yb/Tm/GZO shell@core structure have been studied compared to the Ga(III)-doped Yb/Tm-doped ZnO (Yb/Tm/GZO). The SiO 2 @Yb/Tm/GZO have good thermal accuracy up to 693 °C.

A room temperature method for the formation of ultrathin silicon oxide films

NASA Astrophysics Data System (ADS)

Muisener, Richard John

Growing interest surrounds the use of thin films to impart unique surface properties without adversely affecting those of the bulk. One such example is the formation of a stable high-energy silicon oxide surface on polymers. Thin silicon oxide films have been used to tailor the surface properties of many materials. Conventional methods for SiOx film fabrication such as chemical vapor deposition require either high temperature or expensive vacuum chambers. This research focuses on the intrinsically inexpensive process of UV-ozone to form ultrathin SiOx films from polysiloxane precursors at room temperature and atmospheric pressure. Chemical evidence suggests a complete conversion from organic polymer to inorganic ceramic. Through XPS, the UV-ozone treatment oxidizes over 95% of the silicone's organic side groups with a resulting stoichiometry Of Si 1O2.2C0.08. The silicon oxidation state changes from 2+ in poly(dimethylsiloxane) to 93% 4+ corresponding to SiO2. IR studies show a total loss of methyl bands and the growth of a new Si-O band centered at 1225 cm-1. Gas phase reaction products suggest a radical driven process. The physical properties also suggest a complete conversion to SiO x. Excellent control of film thickness, as low as 2 nm, has been demonstrated by variable angle spectroscopic ellipsometry. The ellipsometrically determined thickness loss of 55% during treatment corresponds to an SiOx film density of 1.9 g/cm3. The continuity of the film is demonstrated by electrical properties and a very low water contact angle consistent with SiOx. The later property ensures that the SiOx films are anti-fogging in nature. Unique hydrophilic-hydrophobic structures were formed through photo-patterning. The reaction has been successfully modeled as self-limiting based on the diffusion of ozone. The chief reactant, atomic oxygen, is generated by the photochemical dissociation of ozone and quickly generates radical species within the polymer film. The reaction proceeds through a cascade of radical reaction pathways until the resulting oxide is formed. The penetration of ozone is limited to the topmost 30 nm of the film; hence, the formation of SiOx is also surface limited. SiOx films of upto 10 nm are formed at room temperature from polymeric precursors.

Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

2016-04-01

The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.

Examination of the laser-induced variations in the chemical etch rate of a photosensitive glass ceramic

NASA Astrophysics Data System (ADS)

Voges, Melanie; Beversdorff, Manfred; Willert, Chris; Krain, Hartmut

2007-10-01

Previous studies in our laboratory have reported that the chemical etch rate of a commercial photosensitive glass ceramic (FoturanTM, Schott Corp., Germany) in dilute hydrofluoric acid is strongly dependent on the incident laser irradiance during patterning at λ=266 nm and λ=355 nm. To help elucidate the underlying chemical and physical processes associated with the laser-induced variations in the chemical etch rate, several complimentary techniques were employed at various stages of the UV laser exposure and thermal treatment. X-ray diffraction (XRD) was used to identify the crystalline phases that are formed in Foturan following laser irradiation and annealing, and monitor the crystalline content as a function of laser irradiance at λ=266 nm and λ=355 nm. The XRD results indicate the nucleation of lithium metasilicate (Li2SiO3) crystals as the exclusive phase following laser irradiation and thermal treatment at temperatures not exceeding 605 °C. The XRD studies also show that the Li2SiO3 density increases with increasing laser irradiance and saturates at high laser irradiance. For our thermal treatment protocol, the average Li2SiO3 crystal diameters are 117.0±10.0 nm and 91.2±5.8 nm for λ=266 nm and λ=355 nm, respectively. Transmission electron microscopy (TEM) was utilized to examine the microscopic structural features of the lithium metasilicate crystals. The TEM results reveal that the growth of lithium metasilicate crystals proceeds dendritically, and produces Li2SiO3 crystals that are ˜700 1000 nm in length for saturation exposures. Optical transmission spectroscopy (OTS) was used to study the growth of metallic silver clusters that act as nucleation sites for the Li2SiO3 crystalline phase. The OTS results show that the (Ag0)x cluster concentration has a dependence on incident laser irradiance that is similar to the etch rate ratios and Li2SiO3 concentration. A comparison between the XRD and optical transmission results and our prior etch rate results show that the etch rate contrast and absolute etch rates are dictated by the Li2SiO3 concentration, which is in turn governed by the (Ag0)x cluster concentration. These results characterize the relationship between the laser exposure and chemical etch rate for Foturan, and permit a more detailed understanding of the photophysical processes that occur in the general class of photostructurable glass ceramic materials. Consequently, these results may also influence the laser processing of other photoactive materials.

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

A silicon dioxide modified magnetic nanoparticles-labeled lateral flow strips for HBs antigen.

PubMed

Zhang, Xueqing; Jiang, Lin; Zhang, Chunlei; Li, Ding; Wang, Can; Gao, Feng; Cui, Daxiang

2011-12-01

Herein we reported a new type of silicon dioxide wrapped magnetic nanoparticles-labeled lateral flow strip for detection of HBs antigen in sera. The SiO2 wrapped Fe3O4 nanocomposites were prepared and characterized by HR-TEM, FTIR and magnetometer. As-prepared nanocomposites were used to label anti-HBV surface monoclonal antibody, the lateral flow strips were constructed, and 100 specimens of sera were collected and tested. Results showed that the prepared SiO2 wrapped Fe3O4 nanocomposites were shell/core structure, well dispersed, with the size of 25 nm in diameter, the thickness of the shell was about 3 nm, their magnetic saturation intensity was 44.3 meu g(-1). Clinical sera specimens test results showed that the prepared lateral flow strips were with the detection limitation of 5 pg/mL by naked eye observation, and 0.1 pg/mL by CCD reader or MAR Analyzer, specificity was 100%. In conclusion, one kind of silicon dioxide wrapped magnetic nanoparticles-labeled lateral flow strip for ultrasensitive detection of HBs antigen was successfully developed, its ease of use, sensitiveness and low-cost make it well-suited for population-based on-the-site hepatitis B screening.

An Al2O3 Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials

PubMed Central

Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Zhang, Xueao

2017-01-01

We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices. PMID:28937619

Oscillations in MOS tunneling

NASA Technical Reports Server (NTRS)

Lewicki, G.; Maserjian, J.

1975-01-01

Oscillatory deviations from Fowler-Nordheim tunneling currents were measured in MOS capacitors with oxide thicknesses ranging from 30 to 75 A. The observed variation of oscillation phases and amplitudes with oxide thickness indicates that the Si-SiO2 interface is independent of oxide thickness only for thicknesses greater than 65 A. At lower thicknesses, the barrier height at the interface decreases gradually with oxide thickness at a rate on the order of 10 mV/A. At higher thicknesses, the barrier height is 4.08 eV. The energy dispersion relation with the SiO2 conduction band is parabolic. The mean free path within the SiO2 conduction band is on the order of 13 A.

Super-bright and short-lived photoluminescence of textured Zn2SiO4:Mn2+ phosphor film on quartz glass

NASA Astrophysics Data System (ADS)

Park, Jehong; Park, Kwangwon; Lee, Jaebum; Kim, Jongsu; Seo, Kwangil; Kwon, Kevin; Kung, Patrick; Kim, Seongsin M.

2010-02-01

Green-emissive textured Zn2SiO4:Mn2+ phosphor film was fabricated by a thermal diffusion of ZnO:Mn on quartz glass. The characterization has been performed in terms of Mn2+ ions concentration (Mn/Zn=1~9 mol %). As an increase of Mn2+ ions concentration in the Zn2SiO4:Mn2+ phosphor film, the emission peak was red shifted from 519 nm to 526 nm, and the decay time to 10% of the maximum intensity was shorter from 20 ms to 0.5 ms. All annealed Zn2SiO4:Mn2+ phosphor films became textured along some hexagonal directions on the amorphous quartz glass. The brightest Zn2SiO4:Mn2+ film at optimal Mn2+ concentration of 5 % showed the photoluminescence brightness of 65 % and the shortened decay time of 4.4 ms in comparison with a commercially Zn2SiO4: Mn2+ powder phosphor screen. The excellencies can be attributed to a unique textured structure.

High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

PubMed

Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

2014-04-01

Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

SiO2 nanoparticles change colour preference and cause Parkinson's-like behaviour in zebrafish

PubMed Central

Li, Xiang; Liu, Bo; Li, Xin-Le; Li, Yi-Xiang; Sun, Ming-Zhu; Chen, Dong-Yan; Zhao, Xin; Feng, Xi-Zeng

2014-01-01

With advances in the development of various disciplines, there is a need to decipher bio-behavioural mechanisms via interdisciplinary means. Here, we present an interdisciplinary study of the role of silica nanoparticles (SiO2-NPs) in disturbing the neural behaviours of zebrafish and a possible physiological mechanism for this phenomenon. We used adult zebrafish as an animal model to evaluate the roles of size (15-nm and 50-nm) and concentration (300 μg/mL and 1000 μg/mL) in SiO2-NP neurotoxicity via behavioural and physiological analyses. With the aid of video tracking and data mining, we detected changes in behavioural phenotypes. We found that compared with 50-nm nanosilica, 15-nm SiO2-NPs produced greater significant changes in advanced cognitive neurobehavioural patterns (colour preference) and caused potentially Parkinson's disease-like behaviour. Analyses at the tissue, cell and molecular levels corroborated the behavioural results, demonstrating that nanosilica acted on the retina and dopaminergic (DA) neurons to change colour preference and to cause potentially Parkinson's disease-like behaviour. PMID:24448416

Magnetic and Mössbauer spectroscopy studies of hollow microcapsules made of silica-coated CoFe2O4 nanoparticles

NASA Astrophysics Data System (ADS)

Lyubutin, I. S.; Gervits, N. E.; Starchikov, S. S.; Lin, Chun-Rong; Tseng, Yaw-Teng; Shih, Kun-Yauh; Wang, Cheng-Chien; Chen, I.-Han; Ogarkova, Yu L.; Korotkov, N. Yu

2016-01-01

The hollow microcapsules made of silica-coated CoFe2O4 nanoparticles were synthesized using chemical co-precipitation, followed by the sol-gel method. Poly(MMA-co-MAA) microspheres were used as a core template which can be completely removed after annealing at 450 °C. The microcapsules are monodisperse with the outer diameter of about 450 nm and the thickness of the shell is about 50 nm. The nanoparticles of Co-ferrite are single crystalline. The size of the nanoparticles and magnetic properties of CoFe2O4/SiO2 hollow spheres can be tuned with high accuracy at the annealing stage. The Mössbauer data indicate that CoFe2O4 ferrite is an inverse spinel, in which Fe3+ and Co2+ ions are distributed in both octahedral and tetrahedral sites with the inversion degree close to the bulk ferrite value. At low temperature the CoFe2O4/SiO2 nanoparticles are in antiferromagnetic (AFM) state due to the canted or triangular magnetic structure. Under heating in the applied field, AFM structure transforms to the ferrimagnetic (FM) structure, that increases the magnetization. The Mössbauer data revealed that the small size CoFe2O4/SiO2 particles do not show superparamagnetic behavior, but they transit to the paramagnetic state by the jump-like first order magnetic transition (JMT). This effect is a specific property of the magnetic nanoparticles isolated by inert material. The suggested method of synthesis can be modified with various bio-ligands on the silane surface, and such materials can find many applications in diagnostics and bio-separation.

Sonochemical approach to the synthesis of Fe(3)O(4)@SiO(2) core-shell nanoparticles with tunable properties.

PubMed

Morel, Anne-Laure; Nikitenko, Sergei I; Gionnet, Karine; Wattiaux, Alain; Lai-Kee-Him, Josephine; Labrugere, Christine; Chevalier, Bernard; Deleris, Gerard; Petibois, Cyril; Brisson, Alain; Simonoff, Monique

2008-05-01

In this study, we report a rapid sonochemical synthesis of monodisperse nonaggregated Fe(3)O(4)@SiO(2) magnetic nanoparticles (NPs). We found that coprecipitation of Fe(II) and Fe(III) in aqueous solutions under the effect of power ultrasound yields smaller Fe(3)O(4) NPs with a narrow size distribution (4-8 nm) compared to the silent reaction. Moreover, the coating of Fe(3)O(4) NPs with silica using an alkaline hydrolysis of tetraethyl orthosilicate in ethanol-water mixture is accelerated many-fold in the presence of a 20 kHz ultrasonic field. The thickness of the silica shell can be easily controlled in the range of several nanometers during sonication. Mossbauer spectra revealed that nonsuperparamagnetic behavior of obtained core-shell NPs is mostly related to the dipole-dipole interactions of magnetic cores and not to the particle size effect. Core-shell Fe(3)O(4)@SiO(2) NPs prepared with sonochemistry exhibit a higher magnetization value than that for NPs obtained under silent conditions owing to better control of the deposited silica quantities as well as to the high speed of sonochemical coating, which prevents the magnetite from oxidizing.

Investigations of surface coatings to reduce memory effect in plastic scintillator detectors used for radioxenon detection

NASA Astrophysics Data System (ADS)

Bläckberg, L.; Fay, A.; Jõgi, I.; Biegalski, S.; Boman, M.; Elmgren, K.; Fritioff, T.; Johansson, A.; Mårtensson, L.; Nielsen, F.; Ringbom, A.; Rooth, M.; Sjöstrand, H.; Klintenberg, M.

2011-11-01

In this work Al2O3 and SiO2 coatings are tested as Xe diffusion barriers on plastic scintillator substrates. The motivation is improved beta-gamma coincidence detection systems, used to measure atmospheric radioxenon within the verification regime of the Comprehensive Nuclear-Test-Ban Treaty. One major drawback with the current setup of these systems is that the radioxenon tends to diffuse into the plastic scintillator material responsible for the beta detection, resulting in an unwanted memory effect. Here, coatings with thicknesses between 20 and 900 nm have been deposited onto plastic scintillators, and investigated using two different experimental techniques. The results show that all tested coatings reduce the Xe diffusion into the plastic. The reduction is observed to increase with coating thickness for both coating materials. The 425 nm Al2O3 coating is the most successful one, presenting a diffusion reduction of a factor 100, compared to uncoated plastic. In terms of memory effect reduction this coating is thus a viable solution to the problem in question.

High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

NASA Astrophysics Data System (ADS)

Gupta, Bipin Kumar; Kedawat, Garima; Gangwar, Amit Kumar; Nagpal, Kanika; Kashyap, Pradeep Kumar; Srivastava, Shubhda; Singh, Satbir; Kumar, Pawan; Suryawanshi, Sachin R.; Seo, Deok Min; Tripathi, Prashant; More, Mahendra A.; Srivastava, O. N.; Hahm, Myung Gwan; Late, Dattatray J.

2018-01-01

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm-1 and D-band at 1340 cm-1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

Photo-induced heat generation in non-plasmonic nanoantennas.

PubMed

Danesi, Stefano; Gandolfi, Marco; Carletti, Luca; Bontempi, Nicolò; De Angelis, Costantino; Banfi, Francesco; Alessandri, Ivano

2018-05-24

Light-to-heat conversion in non-plasmonic, high refractive index nanoantennas is a key topic for many applications, including Raman sensing, laser writing, nanofabrication and photo-thermal therapy. However, heat generation and propagation in non-plasmonic antennas is increasingly debated and contradictory results have been reported so far. Here we report a finite element analysis of the steady-state temperature distribution and heat flow in SiO2/Si core/shell systems (silicon nanoshells) irradiated with different continuous wave lasers (λ = 532, 633 and 785 nm), under real working conditions. The complex interplay among the optical properties, morphology, degree of crystallinity of the nanoshells, thickness dependence of thermal conductivity and interactions with the substrate has been elucidated. This study reveals that all of these parameters can be appropriately combined for obtaining either stable nanoshells for Raman sensing or highly efficient sources of local heating. The optimal balance between thermal stability and field enhancement was found for crystalline Si shell layers with thicknesses ranging from 40 to 60 nm, irradiated by a NIR laser source. On the other hand, non-conformal amorphous or crystalline shell layers with a thickness >50 nm can reach a very high local temperature (above 1000 K) when irradiated with a low power density (less than 1 mW μm-2) laser sources. This work provides a general approach for an extensive investigation of the opto-thermal properties of high-index nanoantennas.

Luminescence enhancement of (Sr1-x Mx )2 SiO4 :Eu2+ phosphors with M (Ca2+ /Zn2+ ) partial substitution for white light-emitting diodes.

PubMed

Wang, Yulong; Zhang, Wentao; Gao, Yang; Long, Jianping; Li, Junfeng

2017-02-01

Eu 2 + -doped Sr 2 SiO 4 phosphor with Ca 2 + /Zn 2 + substitution, (Sr 1-x M x ) 2 SiO 4 :Eu 2 + (M = Ca, Zn), was prepared using a high-temperature solid-state reaction method. The structure and luminescence properties of Ca 2 + /Zn 2 + partially substituted Sr 2 SiO 4 :Eu 2 + phosphors were investigated in detail. With Ca 2 + or Zn 2 + added to the silicate host, the crystal phase could be transformed between the α-form and the β-form of the Sr 2 SiO 4 structure. Under UV excitation at 367 nm, all samples exhibit a broad band emission from 420 to 680 nm due to the 4f 6 5d 1  → 4f 7 transition of Eu 2 + ions. The broad emission band consists of two peaks at 482 and 547 nm, which correspond to Eu 2 + ions occupying the ten-fold oxygen-coordinated Sr.(I) site and the nine-fold oxygen-coordinated Sr.(II) site, respectively. The luminescence properties, including the intensity and lifetime of Sr 2 SiO 4 :Eu 2 + phosphors, improved remarkably on Ca 2 + /Zn 2 + addition, and promote its application in white light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Magnetic characteristics and nanostructures of FePt granular films with GeO2 segregant

NASA Astrophysics Data System (ADS)

Ono, Takuya; Moriya, Tomohiro; Hatayama, Masatoshi; Tsumura, Kaoru; Kikuchi, Nobuaki; Okamoto, Satoshi; Kitakami, Osamu; Shimatsu, Takehito

2017-01-01

To realize a granular film composed of L10-FePt grains with high uniaxial magnetic anisotropy energy, Ku, and segregants for energy-assisted magnetic recording, a FePt-GeO2/FePt-C stacked film was investigated in the engineering process. The FePt-GeO2/FePt-C stacked film fabricated at a substrate temperature of 450 °C realized uniaxial magnetic anisotropy, Kugrain , of about 2.5 × 107 erg/cm3, which is normalized by the volume fraction of FePt grains, and a granular structure with an averaged grain size of 7.7 nm. As the thickness of the FePt-GeO2 upper layer was increased to 9 nm, the Ku values were almost constant. That result differs absolutely from the thickness dependences of the other oxide segregant materials such as SiO2 and TiO2. Such differences on the oxide segregant are attributed to their chemical bond. The strong covalent bond of GeO2 is expected to result in high Ku of the FePt-GeO2/FePt-C stacked films.

Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

PubMed

Komolov, A S; Akhremtchik, S N; Lazneva, E F

2011-08-15

The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

Influence of surface topography on RBS measurements: case studies of (Cu/Fe/Pd) multilayers and FePdCu alloys nanopatterned by self-assembly

NASA Astrophysics Data System (ADS)

Krupinski, M.; Perzanowski, M.; Zabila, Y.; Zarzycki, A.; Marszałek, M.

2017-03-01

In this paper the influence of surface topography on Rutherford backscattering spectrometry (RBS) is discussed. (Cu/Fe/Pd) multilayers with total thickness of about 10 nm were deposited by physical vapor deposition on self-organized array of SiO2 nanoparticles with the size of 50 nm and 100 nm. As a reference, the multilayered systems were also prepared on flat substrates under the same conditions. After the deposition, morphology of the systems was studied by scanning electron microscopy (SEM), while chemical analysis was performed using Rutherford backscattering spectrometry. It was found that the RBS spectra and determined compositions for flat and patterned multilayers differ. The difference is discussed by taking into account the effect of additional inelastic scattering and energy straggling occurring due to developed topography of patterned systems. Then, the multilayers were annealed in 600 °C in order to obtain FePdCu alloy. The phenomenon of solid-state dewetting resulted in the formation of isolated alloy islands on the top of SiO2 nanoparticles. The SEM and RBS analysis were repeated showing correlation between the size distribution of obtained alloy islands and broadening of peaks appearing in RBS spectra. Invited talk at 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), 8-12 November 2016, Ha Long City, Vietnam.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

PubMed

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs

NASA Astrophysics Data System (ADS)

Liu, Mengling; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Ding, Xinghuo

2018-03-01

Experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet (UV) flip-chip (FC) and top-emitting (TE) light-emitting diodes (LEDs) are performed here. To improve the optical and electrical properties of ultraviolet LEDs, we fabricate high-power FC-UV LEDs with Ta2O5/SiO2 distributed Bragg reflectors (DBRs) and a strip-shaped SiO2 current blocking layer (CBL). The reflectance of fourteen pairs of Ta2O5/SiO2 DBRs is 96.4% at 353 nm. The strip-shaped SiO2 CBL underneath the strip-shaped p-electrode can prevent the current concentrating in regions immediately adjacent to the p-electrode where the overlying opaque p-electrode metal layer absorbs the emitted UV light. Moreover, two-level metallization electrodes are used to improve current spreading. Our numerical results show that FC-UV LED has a more favorable current spreading uniformity than TE-UV LED. The light output power of 353 nm FC-UV LED was 23.22 mW at 350 mA, which is 24.7% higher than that of TE-UV LED.

Fiber Optic Couplers.

DTIC Science & Technology

1979-11-01

over a 1 x 4 inch glass plate. A further problem has been that the surface over the ion diffused region is submerged 2 pm below that of the substrate...of varying mask openings (35, 45, 55, 65, 78, 85 pm ). The ion exchange processing time was varied using 20, 25, 35 and 40 minutes. We found that the...pattern is then overcoated with a thick layer of SiO 2 (lO0 pm thick). This thick layer and the SiO 2 substrate thus com- pletely surround the dopant

Morphology of the D/A interface in vapor deposited bilayer organic photovoltaics

NASA Astrophysics Data System (ADS)

Erwin, Patrick; Dimitriou, Michael; Thompson, Mark E.

2017-08-01

A series of bilayer films were prepared by vacuum deposition onto Silicon substrates. These films consisted of either Si/SiO2/donor/C60 or Si/SiO2/C60/donor, where the organic films were in the 20-40 nm thick range and the donors were 7,7-difluoro-14-phenyl-7H-6l4,7l4-[1,3,2]diazaborinino[4,3-a:6,1-a']diisoindole (bDIP), copper phthalocyanine (CuPC), 3,6,11,14-tetraphenyldiindeno[1,2,3-cd:1',2',3'-lm]perylene (DBP) and 2-(4-(diphenylamino)-2,6- dihydroxyphenyl)-4-(4-(diphenyliminio)-2,6-dihydroxycyclohexa-2,5-dien-1-ylidene)-3-oxocyclobut-1-en-1-olate (DPSQ). The donors chosen here have been reported to give good power efficiencies when incorporated into bilayer photovoltaic cells with a C60 acceptor. These bilayer films were examined by neutron reflectometry to characterize the interface between the donor and C60. In the SiO2/donor/C60 films, DPSQ, CuPC, and DBP show a discrete interface with C60 while bDIP shows substantial spontaneous mixing at the interface, consistent with a donor/(donor + C60)/C60 structure, where the mixed layer is 14 nm.. In the SiO2/C60/donor films, all four donors show negligible mixing at the D/A interface consistent with a discrete D/A junction.

Magnetic domain interactions of Fe3O4 nanoparticles embedded in a SiO2 matrix.

PubMed

Fuentes-García, J A; Diaz-Cano, A I; Guillen-Cervantes, A; Santoyo-Salazar, J

2018-03-23

Currently, superparamagnetic functionalized systems of magnetite (Fe 3 O 4 ) nanoparticles (NPs) are promising options for applications in hyperthermia therapy, drug delivery and diagnosis. Fe 3 O 4 NPs below 20 nm have stable single domains (SSD), which can be oriented by magnetic field application. Dispersion of Fe 3 O 4 NPs in silicon dioxide (SiO 2 ) matrix allows local SSD response with uniaxial anisotropy and orientation to easy axis, 90° <001> or 180° <111>. A successful, easy methodology to produce Fe 3 O 4 NPs (6-17 nm) has been used with the Stöber modification. NPs were embedded in amorphous and biocompatible SiO 2 matrix by mechanical stirring in citrate and tetraethyl orthosilicate (TEOS). Fe 3 O 4 NPs dispersion was sampled in the range of 2-12 h to observe the SiO 2 matrix formation as time function. TEM characterization identified optimal conditions at 4 h stirring for separation of SSD Fe 3 O 4 in SiO 2 matrix. Low magnetization (M s ) of 0.001 emu and a coercivity (H c ) of 24.75 Oe indicate that the embedded SSD Fe 3 O 4 in amorphous SiO 2 reduces the M s by a diamagnetic barrier. Magnetic force microscopy (MFM) showed SSD Fe 3 O 4 of 1.2 nm on average embedded in SiO 2 matrix with uniaxial anisotropy response according to Fe 3+ and Fe 2+ electron spin coupling and rotation by intrinsic Neél contribution.

Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

NASA Technical Reports Server (NTRS)

Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

1990-01-01

An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature

NASA Astrophysics Data System (ADS)

Lin, Meng-Yu; Wang, Cheng-Hung; Pao, Chun-Wei; Lin, Shih-Yen

2015-09-01

Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatures on metal/SiO2 interfaces. By replacing the Cu templates with thin Ni templates, complete graphitic carbon films with superior crystalline quality is obtained at 600 °C on SiO2/Si substrates after removing the Ni templates. The enhanced attachment of the graphitic carbon film to the SiO2/Si substrates with reduced Ni thickness makes the approach a promising approach for transferring-free graphene preparation at low temperature by using MBE.

Self-assembled antireflection coatings for light trapping based on SiGe random metasurfaces

NASA Astrophysics Data System (ADS)

Bouabdellaoui, Mohammed; Checcucci, Simona; Wood, Thomas; Naffouti, Meher; Sena, Robert Paria; Liu, Kailang; Ruiz, Carmen M.; Duche, David; le Rouzo, Judikael; Escoubas, Ludovic; Berginc, Gerard; Bonod, Nicolas; Zazoui, Mimoun; Favre, Luc; Metayer, Leo; Ronda, Antoine; Berbezier, Isabelle; Grosso, David; Gurioli, Massimo; Abbarchi, Marco

2018-03-01

We demonstrate a simple self-assembly method based on solid state dewetting of ultrathin silicon films and germanium deposition for the fabrication of efficient antireflection coatings on silicon for light trapping. We fabricate SiGe islands with a high surface density, randomly positioned and broadly varied in size. This allows one to reduce the reflectance to low values in a broad spectral range (from 500 nm to 2500 nm) and a broad angle (up to 55°) and to trap within the wafer a large portion of the impinging light (˜40 % ) also below the band gap, where the Si substrate is nonabsorbing. Theoretical simulations agree with the experimental results, showing that the efficient light coupling into the substrate is mediated by Mie resonances formed within the SiGe islands. This lithography-free method can be implemented on arbitrarily thick or thin SiO2 layers and its duration only depends on the sample thickness and on the annealing temperature.

Spontaneous emission inhibition of telecom-band quantum disks inside single nanowire on different substrates.

PubMed

Birowosuto, M D; Zhang, G; Yokoo, A; Takiguchi, M; Notomi, M

2014-05-19

We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO(2)), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the high-refractive-index materials of Si. Experimentally, the inhibition factor ζ of the Qdisk emission at 1,500 nm decreases from 4.6 to 2.5 for NW on SiO(2) and Si substrates, respectively. Those inhibitions are even much smaller than that of 6.4 of the standing NW. The inhibition factors well agree with those calculated from the coupling of the Qdisk to the fundamental guided mode and the continuum of radiative modes. Our observation can be useful for the integration of the NW as light sources in the photonic nanodevices.

Effect of buffer layer on photoresponse of MoS2 phototransistor

NASA Astrophysics Data System (ADS)

Miyamoto, Yuga; Yoshikawa, Daiki; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji

2018-06-01

An atomically thin MoS2 field-effect transistor (FET) is expected as an ultrathin photosensor with high sensitivity. However, a persistent photoconductivity phenomenon prevents high-speed photoresponse. Here, we investigate the photoresponse of a MoS2 FET with a thin Al2O3 buffer layer on a SiO2 gate insulator. The application of a 2-nm-thick Al2O3 buffer layer greatly improves not only the steady state properties but also the response speed from 1700 to 0.2 s. These experimental results are well explained by the random localized potential fluctuation model combined with the model based on the recombination of the bounded electrons around the trapped hole.

Lanthanide-based oxides and silicates for high-kappa gate dielectric applications

NASA Astrophysics Data System (ADS)

Jur, Jesse Stephen

The ability to improve performance of the high-end metal oxide semiconductor field effect transistor (MOSFET) is highly reliant on the dimensional scaling of such a device. In scaling, a decrease in dielectric thickness results in high current leakage between the electrode and the substrate by way of direct tunneling through the gate dielectric. Observation of a high leakage current when the standard gate dielectric, SiO2, is decreased below a thickness of 1.5 nm requires engineering of a replacement dielectric that is much more scalable. This high-kappa dielectric allows for a physically thicker oxide, reducing leakage current. Integration of select lanthanide-based oxides and silicates, in particular lanthanum oxide and silicate, into MOS gate stack devices is examined. The quality of the high-kappa dielectrics is monitored electrically to determine properties such as equivalent oxide thickness, leakage current density and defect densities. In addition, analytical characterization of the dielectric and the gate stack is provided to examine the materialistic significance to the change of the electrical properties of the devices. In this work, lanthanum oxide films have been deposited by thermal evaporation on to a pre-grown chemical oxide layer on silicon. It is observed that the SiO2 interfacial layer can be consumed by a low-temperature reaction with lanthanum oxide to produce a high-quality silicate. This is opposed to depositing lanthanum oxide directly on silicon, which can possibly favor silicide formation. The importance of oxygen regulation in the surrounding environment of the La2O3-SiO2 reaction-anneal is observed. By controlling the oxygen available during the reaction, SiO2 growth can be limited to achieve high stoichiometric ratios of La2O 3 to SiO2. As a result, MOS devices with an equivalent oxide thickness (EOT) of 5 A and a leakage current density of 5.0 A/cm 2 are attained. This data equals the best value achieved in this field and is a substantial improvement over SiO(N) dielectrics, allowing for increased device scaling. High-temperature processing, consistent with the source/drain activation anneal in MOSFET processing, is performed on lanthanum-silicate based MOS devices with Ta or TaN gate electrodes and a W metal capping layer. The thermal limit of Ta is observed to be less than 800°C, resulting in a phase transformation that can result in uncontrolled shifting of the MOS device flat-band voltage. TaN is observed to be more thermally stable (up to 1000°C) and results in an increase in the capacitance density suggesting that it impedes oxygen reaction with silicon to produce SiO2. It is later observed that a W metal capping layer can serve as a high-oxygen source, which results in an increased interfacial SiO2 formation. By limiting the oxygen content in the W capping layer and by utilizing a thermally stable TaN gate electrode, control over the electrical properties of the MOS device is acquired. To determine the stability of amorphous lanthanum-silicate in contact with investigated by means of back-side secondary ion mass spectroscopy profiling. The results are the first reported data showing that the lanthanum incorporated in the silica matrix doe not diffuse into the silicon substrate after high temperature processing. The decrease in the device effective work function (φM,eff ) observed in these samples is examined in detail. First, as a La 2O3 capping layer on HfSiO(N), the shift yields ideal-φ M,eff values for nMOSFET deices (4.0 eV) that were previously inaccessible. Other lanthanide oxides (Dy, Ho and Yb) used as capping layers show similar effects. It is also shown that tuning of φM,eff can be realized by controlling the extent of lanthanide-silicate formation. This research, conducted in conjunction with SEMATECH and the SRC, represents a significant technological advancement in realizing 45 and sub-45 nm MOSFET device nodes.

AHAPS-functionalized silica nanoparticles do not modulate allergic contact dermatitis in mice

NASA Astrophysics Data System (ADS)

Ostrowski, Anja; Nordmeyer, Daniel; Mundhenk, Lars; Fluhr, Joachim W.; Lademann, Jürgen; Graf, Christina; Rühl, Eckart; Gruber, Achim D.

2014-09-01

Allergic contact dermatitis (ACD) is a common skin disease in people and may become a potential site of exposure to nanoparticles (NP). Silica nanoparticles (SiO2-NP) possess a promising potential for various medical and non-medical applications, including normal and diseased skin as target organs. However, it has been shown that negatively charged SiO2-NP may act as proinflammatory adjuvant in allergic diseases. The effect of topical SiO2-NP exposure on preexisting ACD has not been studied to date although this reflects a common in vivo situation. Of particular interest are the potential effects of positively charged N-(6-aminohexyl)-aminopropyltrimethoxysilane (AHAPS)-functionalized SiO2-NP which are promising candidates for delivery systems, including gene delivery into the skin. Here, the effects of such AHAPS-functionalized SiO2-NP (55 ± 6 nm in diameter) were studied in an oxazolone-induced ACD model in SKH1 mice and compared to ACD mice treated with vehicle only. The clinical course of the disease was assessed by monitoring of the transepidermal water loss (TEWL) and the erythema. In histologic and morphometric analyses, the distribution of particles, the degree of inflammation, epidermal thickness, and the inflammatory infiltrate were characterized and quantified by standard and special histological stains as well as immunohistochemistry for CD3+ lymphocytes. To assess possible systemic effects, serum immunoglobulin E (IgE) was determined by enzyme-linked immunosorbent assay. Following administration of AHAPS-SiO2-NP for five consecutive days, no effects were observed in all clinical, histologic, morphometric, and molecular parameters investigated. In conclusion, positively charged AHAPS-SiO2-NP seem not to affect the course of ACD during exposure for 5 days.

Electrical characteristics of SiO2/ZrO2 hybrid tunnel barrier for charge trap flash memory

NASA Astrophysics Data System (ADS)

Choi, Jaeho; Bae, Juhyun; Ahn, Jaeyoung; Hwang, Kihyun; Chung, Ilsub

2017-08-01

In this paper, we investigate the electrical characteristics of SiO2/ZrO2 hybrid tunnel oxide in metal-Al2O3-SiO2-Si3N4-SiO2-silicon (MAONOS) structure in an effort to improve program and erase speed as well as retention characteristics. Inserting ZrO2 into the conventional MAONOS structure increased the programmed V th variation to 6.8 V, and increased the erased V th variation to -3.7 V at 17 MV/cm. The results can be understood in terms of reducing the Fowler-Nordheim (F/N) tunneling barrier due to high-k ZrO2 in the tunneling oxide. In addition, Zr diffusion in SiO2 caused the formation of Zr x Si1- x O2 at the interface region, which reduced the energy band gap of SiO2. The retention property of the hybrid tunnel oxide varied depending on the thickness of SiO2. For thin SiO2 less than 30 Å, the retention properties of the tunneling oxides were poor compared with those of the SiO2 only tunneling oxides. However, the hybrid tunneling oxides with SiO2 thickness thicker than 40 Å yielded improved retention behavior compared with those of the SiO2-only tunneling oxides. The detailed analysis in charge density of ZrO2 was carried out by ISPP test. The obtained charge density was quite small compared to that of the total charge density, which indicates that the inserted ZrO2 layer serves as a tunneling material rather than charge storage dielectric.

Improved light-extraction efficiency from organic light-emitting diodes using hazy SiO2 thin films created by using an aerosol-deposition method

NASA Astrophysics Data System (ADS)

Moon, Byung Seuk; Lee, Soo-Hyoung; Huh, Yoon Ho; Kwon, O. Eun; Park, Byoungchoo; Lee, Bumjoo; Lee, Seung-Hyun; Hwang, Inchan

2015-04-01

We herein report an investigation of the effect of rough thin films of SiO2 granules deposited on glass substrates of organic light-emitting devices (OLEDs) by using a simple, low-cost and scalable process based on a powder spray of SiO2 granules in vacuum, known as the aerosol-deposition method, with regard to their external light-extraction capabilities. The rough and hazy thin SiO2 films produced by using aerosol-deposition and acting as scattering centers were able to efficiently reduce the light-trapping loss in the glass substrate (glass mode) for internally-generated photons and to enhance the external quantum efficiency (EQE) of the OLEDs. Based on aerosol-deposited silica films with a thickness of 800 nm and a haze of 22% on glass substrates, the EQE of phosphorescent green OLEDs was found to be enhanced by 17%, from an EQE of 7.0% for smooth bare glass substrates to an EQE of 8.2%. Furthermore, the EQEs of fluorescent blue and phosphorescent red OLEDs were shown to be enhanced by 16%, from an EQE of 3.7% to 4.3%, and by 16%, from an EQE of 9.3% to 10.8%, respectively. These improvements in the EQEs without serious changes in the emission spectra or the Lambertian emitter property clearly indicate the high potential of the aerosol-deposition technique for the realization of highly-efficient light extraction in colorful OLED lighting.

Report on cascade energy relaxation from PVP to Tb3+:Bi2SiO5 nanophosphor through salicylic acid in composite polymeric film

NASA Astrophysics Data System (ADS)

Kumari, Pushpa; Dwivedi, Y.

2018-05-01

The present article reports structural and spectroscopic properties of Tb:Bi2SiO5 nanophosphors dispersed in Polyvinylpyrrolidone polymer film, in presence of Salicylic acid (SA) molecule, which acts as a sensitizer. Detailed structural and spectroscopic characterizations were carried out using X-ray diffraction patterns, Scanning Electron Microscope, Fourier Transform Infrared and Excitation and photoluminescence techniques. The mean crystallite size of Tb3+:Bi2SiO5 nanophosphor and Tb3+:Bi2SiO5 in Polyvinylpyrrolidone polymer composite was estimated ∼22 nm and ∼28 nm, respectively. We have report atleast two times enhancement in Tb3+ ions emission intensity due to the efficient energy transfer from salicylic acid molecule to Tb ions. In addition to energy transfer from salicylic acid, the Polyvinylpyrrolidone polymeric host was also reported to serve as a sensitizer for SA molecule and Tb3+ ions through a cascade energy relaxation process while exciting with 248 nm photons. On 248 nm photon excitation, atleast five improvements in Tb3+ ion emission intensity are reported. Presence of SA molecule facilitates precise colour tuning as obvious from the CIE coordinates.

Materials Study of NbN and Ta x N Thin Films for SNS Josephson Junctions

DOE PAGES

Missert, Nancy; Brunke, Lyle; Henry, Michael D.; ...

2017-02-15

We investigated properties of NbN and Ta xN thin films grown at ambient temperatures on SiO 2/Si substrates by reactive-pulsed laser deposition and reactive magnetron sputtering (MS) as a function of N 2 gas flow. Both techniques produced films with smooth surfaces, where the surface roughness did not depend on the N 2 gas flow during growth. High crystalline quality, (111) oriented NbN films with T c up to 11 K were produced by both techniques for N contents near 50%. The low temperature transport properties of the Ta xN films depended upon both the N 2 partial pressure usedmore » during growth and the film thickness. Furthermore, the root mean square surface roughness of Ta xN films grown by MS increased as the film thickness decreased down to 10 nm.« less

Bioactive glass coatings for orthopedic metallic implants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lopez-Esteban, Sonia; Saiz, Eduardo; Fujino, Sigheru

2003-06-30

The objective of this work is to develop bioactive glass coatings for metallic orthopedic implants. A new family of glasses in the SiO2-Na2O-K2O-CaO-MgO-P2O5 system has been synthesized and characterized. The glass properties (thermal expansion, softening and transformation temperatures, density and hardness) are in line with the predictions of established empirical models. The optimized firing conditions to fabricate coatings on Ti-based and Co-Cr alloys have been determined and related to the glass properties and the interfacial reactions. Excellent adhesion to alloys has been achieved through the formation of 100-200 nm thick interfacial layers (Ti5Si3 on Ti-based alloys and CrOx on Co-Cr).more » Finally, glass coatings, approximately 100 mu m thick, have been fabricated onto commercial Ti alloy-based dental implants.« less

Immobilization of Organophosphorus Acid Anhydrolase Mutant Y212F on Silica Nanospheres

DTIC Science & Technology

2016-09-01

Enzyme to 80 nm Amine Terminated SiO2 ..................2 2.3 Testing of Conjugated Enzyme Activity... SiO2 Particles ........................................................6 2. Summary Results from Testing on DFP Substrate at nanoComposix...7 3. Results of Fluoride Release Assay from GD Testing of Y212F Enzyme before and after Conjugation to SiO2 Particles

Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability.

PubMed

Tien, Ming-Chun; Bauters, Jared F; Heck, Martijn J R; Blumenthal, Daniel J; Bowers, John E

2010-11-08

We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell's wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity. The effective n2 measured using continuous-wave self-phase modulation shows agreement with the theoretical calculation. The waveguide with 2.8-μm wide and 80-nm thick Si3N4 core has low loss and high power handling capability, with an effective n2 of about 9×10(-16) cm2/W.

Effect of water layer at the SiO2/graphene interface on pentacene morphology.

PubMed

Chhikara, Manisha; Pavlica, Egon; Matković, Aleksandar; Gajić, Radoš; Bratina, Gvido

2014-10-07

Atomic force microscopy has been used to examine early stages of pentacene growth on exfoliated single-layer graphene transferred to SiO2 substrates. We have observed 2D growth with mean height of 1.5 ± 0.2 nm on as-transferred graphene. Three-dimensional islands of pentacene with an average height of 11 ± 2 nm were observed on graphene that was annealed at 350 °C prior to pentacene growth. Compellingly similar 3D morphology has been observed on graphene transferred onto SiO2 that was treated with hexamethyldisilazane prior to the transfer of graphene. On multilayer graphene we have observed 2D growth, regardless of the treatment of SiO2. We interpret this behavior of pentacene molecules in terms of the influence of the dipolar field that emerges from the water monolayer at the graphene/SiO2 interface on the surface energy of graphene.

Red/blue-shift dual-directional regulation of α-(Ca, Sr)2SiO4:Eu(2+) phosphors resulting from the incorporation content of Eu(2+)/Sr(2+) ions.

PubMed

Lu, Zhijuan; Mao, Zhiyong; Chen, Jingjing; Wang, Dajian

2015-09-21

In this work, tunable emission from green to red and the inverse tuning from red to green in α-(Ca, Sr)2SiO4:Eu(2+) phosphors were demonstrated magically by varying the incorporation content of Eu(2+) and Sr(2+) ions, respectively. The tunable emission properties and the tuning mechanism of red-shift resulting from the Eu(2+) content as well as that of blue-shift induced by the Sr(2+) content were investigated in detail. As a result of fine-controlling the incorporation content of Eu(2+), the emission peak red-shifts from 541 nm to 640 nm. On the other hand, the emission peak inversely blue-shifts from 640 nm to 546 nm through fine-adjusting the incorporation content of Sr(2+). The excellent tuning characteristics for α-(Ca, Sr)2SiO4:Eu(2+) phosphors presented in this work exhibited their various application prospects in solid-state lighting combining with a blue chip or a near-UV chip.

Transparent binary-thickness coatings on metal substrates that produce binary patterns of orthogonal elliptical polarization states in reflected light

NASA Astrophysics Data System (ADS)

Azzam, Rasheed M. A.; Angel, Wade W.

1992-12-01

A reflective division-of-wavefront polarizing beam splitter is described that uses a dual- thickness transparent thin-film coating on a metal substrate. A previous design that used a partially clad substrate at the principal angle of the metal [Azzam, JOSA A 5, 1576 (1988)] is replaced by a more general one in which the substrate is coated throughout and the film thickness alternates between two non-zero levels. The incident linear polarization azimuth is chosen near, but not restricted to, 45 degree(s) (measured from the plane of incidence), and the angle of incidence may be selected over a range of values. The design procedure, which uses the two-dimensional Newton-Raphson method, is applied to the SiO2-Au film- substrate system at 633 nm wavelength, as an example, and the characteristics of the various possible coatings are presented.

Oxidation property of SiO2-supported small nickel particle prepared by the sol-gel method

NASA Astrophysics Data System (ADS)

Yamamoto, Y.; Yamashita, S.; Afiza, N.; Katayama, M.; Inada, Y.

2016-05-01

The oxidation property of SiO2-supported small Ni particle has been studied by means of the in-situ XAFS method. The Ni particle with the average diameter of 4 nm supported on SiO2 was prepared by the sol-gel method. The XANES spectrum of the small metallic Ni particle was clearly different from that of bulk Ni. The exposure of diluted O2 gas at room temperature promoted the surface oxidation of Ni(0) particle. During the temperature programmed oxidation process, the supported Ni(0) particle was quantitatively oxidized to NiO, and the oxidation temperature was lower by ca. 200 °C than that of the SiO2-supported Ni particle with the larger particle radius of 17 nm prepared by the impregnation method.

A New Ordered Si/SiO2 phase: Infrared Spectroscopy Analysis and Modeling

NASA Astrophysics Data System (ADS)

Bradley, J.; Herbots, N.; Shaw, J.; Atluri, V.; Queeney, K. T.; Chabal, Y. J.

2003-10-01

A new ordered Si/SiO2 phase is grown by conventional oxidation on ordered, OH-terminated (1x1)Si(100) surfaces formed at room temperature in ambient using a wet chemical cleaning method [1, 2] combined with conventional oxidation. Si atoms within 1-2.5 nm thick SiO2 are found to be in registry with respect to Si atoms in the Si(100). The degree of ordering is characterized by combining ion channeling with nuclear resonance analysis, as well as Reflective High Energy Electron Diffraction (RHEED), and High Resolution Transmission Electron Microscopy (HRTRM) and is found to be confined to a 2nm region in the SiO2[1]. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Elastic Recoil Deflection (ERD) were used to profile silicon, oxygen, carbon, and hydrogen coverage within the ordered interphase. Most recently, infrared spectroscopy [2] was employed to investigate the bonding at the ordered Si/SiO2 interface and compare the suboxides region to conventional thermal oxides. Infrared spectroscopy shows that the TO red-shift due to SiOx cross-bonding at the Si/SiO2 interface is 50 % smaller and occurs more abruptly than in conventional thermal oxides. This indicates a more homogeneous bonding environment between Si and SiO2, which is consistent with the presence of an ordered phase. Using these results, we are modeling the structure of the 2 nm interphase with 3DSTRING [3]. This Monte Carlo Simulation enables us to compare the channeling spectra with the experimental data for the possible phase configuration in ordered SiOx on Si. [1] N. Herbots, V. Atluri, J. D. Bradley, J. Xiang, S. Banerjee, Q.Hurst, US Patent #6,613,677, Granted 9/2/2003 [2] N. Herbots, J. M. Shaw, Q. B. Hurst, M. P. Grams, R. J. Culbertson, D. J. Smith, V. Atluri, P. Zimmerman, and K. T. Queeney, Mat. Sci. Eng. B B87, 303-316 (2001). [3] K. T. Queeney, N. Herbots, Justin, M. Shaw, V. Atluri, Y. J. Chabal (to be published)

Tunable Wetting Property in Growth Mode-Controlled WS2 Thin Films

NASA Astrophysics Data System (ADS)

Choi, Byoung Ki; Lee, In Hak; Kim, Jiho; Chang, Young Jun

2017-04-01

We report on a thickness-dependent wetting property of WS2/Al2O3 and WS2/SiO2/Si structures. We prepared WS2 films with gradient thickness by annealing thickness-controlled WO3 films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2 over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2 films can account for the contrasting wetting properties between WS2/Al2O3 and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.

Synthesis, characterization and luminescence of europium perchlorate with MABA-Si complex and coating structure SiO2 @Eu(MABA-Si) luminescence nanoparticles.

PubMed

Fu, Zhi-Fang; Li, Wen-Xian; Bai, Juan; Bao, Jin-Rong; Cao, Xiao-Fang; Zheng, Yu-Shan

2017-05-01

This article reports a novel category of coating structure SiO 2 @Eu(MABA-Si) luminescence nanoparticles (NPs) consisting of a unique organic shell, composed of perchlorate europium(III) complex, and an inorganic core, composed of silica. The binary complex Eu(MABA-Si) 3 ·(ClO 4 ) 3 ·5H 2 O was synthesized using HOOCC 6 H 4 N(CONH(CH 2 ) 3 Si(OCH 2 CH 3 ) 3 ) 2 (MABA-Si) and was used as a ligand. Furthermore, the as-prepared silica NPs were successfully coated with the -Si(OCH 2 CH 3 ) 3 group of MABA-Si to form Si-O-Si chemical bonds by means of the hydrolyzation of MABA-Si. The binary complexes were characterized by elemental analysis, molar conductivity and coordination titration analysis. The results indicated that the composition of the binary complex was Eu(MABA-Si) 3 ·(ClO 4 ) 3 ·5H 2 O. Coating structure SiO 2 @Eu(MABA-Si) NPs were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and infrared (IR) spectra. Based on the SEM and TEM measurements, the diameter of core-SiO 2 particles was ~400 and 600 nm, and the thickness of the cladding layer Eu(MABA-Si) was ~20 nm. In the binary complex Eu(MABA-Si) 3 ·(ClO 4 ) 3 ·5H 2 O, the fluorescence spectra illustrated that the energy of the ligand MABA-Si transferred to the energy level for the excitation state of europium(III) ion. Coating structure SiO 2 @Eu(MABA-Si) NPs exhibited intense red luminescence compared with the binary complex. The fluorescence lifetime and fluorescence quantum efficiency of the binary complex and of the coating structure NPs were also calculated. The way in which the size of core-SiO 2 spheres influences the luminescence was also studied. Moreover, the luminescent mechanisms of the complex were studied and explained. Copyright © 2016 John Wiley & Sons, Ltd.

Wetting properties of phospholipid dispersion on tunable hydrophobic SiO2-glass plates.

PubMed

Alexandrova, Lidia; Karakashev, Stoyan I; Grigorov, L; Phan, Chi M; Smoukov, Stoyan K

2015-06-01

We study the wetting properties of very small droplets of salty aqueous suspensions of unilamellar liposomes of DMPC (dimyristoylphosphatidylcholine), situated on SiO2-glass surfaces with different levels of hydrophobicity. We evaluated two different measures of hydrophobicity of solid surfaces - receding contact angles and the thickness of wetting films trapped between an air bubble and the solid surface at different levels of hydrophobicity. We established a good correlation between methods which differ significantly in measurement difficulty and experimental setup. We also reveal details of the mechanism of wetting of different surfaces by the DMPC liposome suspension. Hydrophilic surfaces with water contact angles in the range of 0° to 35° are readily hydrophobized by the liposomes and only showed corresponding contact angles in the range 27°-43°. For same range of surface hydrophobicities, there was a clear reduction of the thickness of the wetting films between the surface and a bubble, reaching a minimum in the 35°-40° range. At higher levels of hydrophobicity both pure water and the liposome suspension show similar contact angles, and the thickness of wetting films between a bubble and those surfaces increases in parallel. Our analysis showed that the only force able to stabilize the film under these experimental conditions is steric repulsion. The latter suggests that nanobubbles adsorbed on hydrophobic parts of the surface, and coated with a DMPC layer, may be the cause of the 40-70 nm thickness of wetting films we observe. Copyright © 2014 Elsevier B.V. All rights reserved.

Processing of SiO2 protective layer using HMDS precursor by combustion CVD.

PubMed

Park, Kyoung-Soo; Kim, Youngman

2011-08-01

Hexamethyldisilazane (HMDS, [(CH3)3Si]2NH) was used as a precursor to form SiO2 protective coatings on IN738LC alloys by combustion chemical vapor deposition (CCVD). SEM and XPS showed that the processed coatings were composed mainly of SiO2. The amount of HMDS had the largest effect on the size of the SiO2 agglomerates and the thickness of the deposited coatings. The specimens coated with SiO2 using the 0.05 mol/l HMDS solution showed a significantly higher temperature oxidation resistance than those deposited under other conditions.

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

PubMed

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

High-dose neutron irradiation performance of dielectric mirrors

DOE PAGES

Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; ...

2015-05-01

The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al 2O 3/SiO 2 and HfO 2/SiO 2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO 2/SiO 2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al 2O 3/SiO 2 mirrors reducedmore » to 44%, eventually failing at 4 dpa. Transmission electron microscopy (TEM) observation of the Al 2O 3/SiO 2 specimens showed SiO 2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO 2/SiO 2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al 2O 3/SiO 2 mirror, though less evident in HfO 2/SiO 2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.« less

High fluence swift heavy ion structure modification of the SiO2/Si interface and gate insulator in 65 nm MOSFETs

NASA Astrophysics Data System (ADS)

Ma, Yao; Gao, Bo; Gong, Min; Willis, Maureen; Yang, Zhimei; Guan, Mingyue; Li, Yun

2017-04-01

In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO2/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO2 and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

Silica nanoparticles induce cardiotoxicity interfering with energetic status and Ca2+ handling in adult rat cardiomyocytes

PubMed Central

Bernal-Ramírez, Judith; Lozano, Omar; Oropeza-Almazán, Yuriana; Castillo, Elena Cristina; Garza, Jesús Roberto; García, Noemí; Vela, Jorge; Ortega, Eduardo; Torre-Amione, Guillermo; Ornelas-Soto, Nancy

2017-01-01

Recent evidence has shown that nanoparticles that have been used to improve or create new functional properties for common products may pose potential risks to human health. Silicon dioxide (SiO2) has emerged as a promising therapy vector for the heart. However, its potential toxicity and mechanisms of damage remain poorly understood. This study provides the first exploration of SiO2-induced toxicity in cultured cardiomyocytes exposed to 7- or 670-nm SiO2 particles. We evaluated the mechanism of cell death in isolated adult cardiomyocytes exposed to 24-h incubation. The SiO2 cell membrane association and internalization were analyzed. SiO2 showed a dose-dependent cytotoxic effect with a half-maximal inhibitory concentration for the 7 nm (99.5 ± 12.4 µg/ml) and 670 nm (>1,500 µg/ml) particles, which indicates size-dependent toxicity. We evaluated cardiomyocyte shortening and intracellular Ca2+ handling, which showed impaired contractility and intracellular Ca2+ transient amplitude during β-adrenergic stimulation in SiO2 treatment. The time to 50% Ca2+ decay increased 39%, and the Ca2+ spark frequency and amplitude decreased by 35 and 21%, respectively, which suggest a reduction in sarcoplasmic reticulum Ca2+-ATPase (SERCA) activity. Moreover, SiO2 treatment depolarized the mitochondrial membrane potential and decreased ATP production by 55%. Notable glutathione depletion and H2O2 generation were also observed. These data indicate that SiO2 increases oxidative stress, which leads to mitochondrial dysfunction and low energy status; these underlie reduced SERCA activity, shortened Ca2+ release, and reduced cell shortening. This mechanism of SiO2 cardiotoxicity potentially plays an important role in the pathophysiology mechanism of heart failure, arrhythmias, and sudden death. NEW & NOTEWORTHY Silica particles are used as novel nanotechnology-based vehicles for diagnostics and therapeutics for the heart. However, their potential hazardous effects remain unknown. Here, the cardiotoxicity of silica nanoparticles in rat myocytes has been described for the first time, showing an impairment of mitochondrial function that interfered directly with Ca2+ handling. PMID:28130337

Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric.

PubMed

Xu, Jingping; Wen, Ming; Zhao, Xinyuan; Liu, Lu; Song, Xingjuan; Lai, Pui-To; Tang, Wing-Man

2018-08-24

The carrier mobility of MoS 2 transistors can be greatly improved by the screening role of high-k gate dielectric. In this work, atomic-layer deposited (ALD) HfO 2 annealed in NH 3 is used to replace SiO 2 as the gate dielectric to fabricate back-gated few-layered MoS 2 transistors, and good electrical properties are achieved with field-effect mobility (μ) of 19.1 cm 2 V -1 s -1 , subthreshold swing (SS) of 123.6 mV dec -1 and on/off ratio of 3.76 × 10 5 . Furthermore, enhanced device performance is obtained when the surface of the MoS 2 channel is coated by an ALD HfO 2 layer with different thicknesses (10, 15 and 20 nm), where the transistor with a 15 nm HfO 2 encapsulation layer exhibits the best overall electrical properties: μ = 42.1 cm 2 V -1 s -1 , SS = 87.9 mV dec -1 and on/off ratio of 2.72 × 10 6 . These improvements should be associated with the enhanced screening effect on charged-impurity scattering and protection from absorption of environmental gas molecules by the high-k encapsulation. The capacitance equivalent thickness of the back-gate dielectric (HfO 2 ) is only 6.58 nm, which is conducive to scaling of the MoS 2 transistors.

Direct measurement of density of states in pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Yogev, S.; Halpern, E.; Matsubara, R.; Nakamura, M.; Rosenwaks, Y.

2011-10-01

We report on direct high lateral resolution measurements of density of states in pentacene thin film transistors using Kelvin probe force microscopy. The measurements were conducted on passivated (hexamethyldisilazane) and unpassivated field effect transistors with 10- and 30-nm-thick pentacene polycrystalline layers. The analysis takes into account both the band bending in the organic film and the trapped charge at the SiO2-pentacene interface. We found that the density of states for the highest occupied molecular orbital band of pentacene film on the treated substrate is Gaussian with a width (variance) of σ=0.07±0.01eV and an exponential tail. The concentration of the density of states in the gap for pentacene on bare SiO2 substrate was larger by one order of magnitude, had a different energy distribution, and induced Fermi level pinning. The results are discussed in view of their effect on pentacene thin film transistors’ performance.

A single phase, red emissive Mg2SiO4:Sm3+ nanophosphor prepared via rapid propellant combustion route

NASA Astrophysics Data System (ADS)

Naik, Ramachandra; Prashantha, S. C.; Nagabhushana, H.; Sharma, S. C.; Nagaswarupa, H. P.; Anantharaju, K. S.; Nagabhushana, B. M.; Premkumar, H. B.; Girish, K. M.

2015-04-01

Mg2SiO4:Sm3+ (1-11 mol%) nanoparticles were prepared by a rapid low temperature solution combustion route. The powder X-ray diffraction (PXRD) patterns exhibit orthorhombic structure with α-phase. The average crystallite size estimated using Scherer's method, W-H plot and strain-size plots were found to be in the range 25-50 nm and the same was confirmed by Transmission Electron Microscopy (TEM). Scanning electron microscopy (SEM) pictures show porous structure and crystallites were agglomerated. The effect of Sm3+ cations on luminescence of Mg2SiO4 was well studied. Interestingly the samples could be effectively excited with 315 nm and emitted light in the red region, which was suitable for the demands of high efficiency WLEDs. The emission spectra consists of four main peaks which can be assigned to the intra 4-f orbital transitions of Sm3+ ions 4G5/2 → 6H5/2 (576 nm), 4G5/2 → 6H7/2 (611 nm), 4G5/2 → 6H9/2 (656 nm) and 4G5/2 → 6H11/2 (713 nm). The optimal luminescence intensity was obtained for 5 mol% Sm3+ ions. The CIE (Commission International de I'Eclairage) chromaticity co-ordinates were calculated from emission spectra, the values (0.588, 0.386) were close to the NTSC (National Television Standard Committee) standard value of red emission. Coordinated color temperature (CCT) was found to be 1756 K. Therefore optimized Mg2SiO4:Sm3+ (5 mol%) phosphor was quite useful for solid state lighting.

Two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers and their vertical input coupling properties

NASA Astrophysics Data System (ADS)

Wang, Jun; Mu, Xiaoyu; Wang, Gang; Liu, Changlong

2017-11-01

By etching two SiO2 optical waveguide slabs separately implanted with 90 keV Ag ions and 60 keV Cu ions at the same dose of 6 × 1016 cm-2, two-dimensional Ag/SiO2 and Cu/SiO2 nanocomposite surface-relief grating couplers with 600-nm periodicity and 100-nm thickness were fabricated, and their structural and vertical input coupling properties were investigated. Experimental results revealed that the two couplers could convert light beams at wavelengths of 620-880 nm into guided waves with different efficiencies, highlighting the special importance of metal nanoparticles (NPs). Further discussions also revealed that owing to the introduction of periodically distributed metal NPs, the periodical phase modification of the transmitted beam was enhanced drastically, and the nanocomposite veins could behave as efficient light scatterers. As a result, the two couplers were much larger in coupling efficiency than the NP-free one with identical morphological parameters. The above findings may be useful to construct thin and short but efficient surface-relief grating couplers on glass optical waveguides.

In vitro and in vivo genotoxicity investigations of differently sized amorphous SiO2 nanomaterials.

PubMed

Maser, Elena; Schulz, Markus; Sauer, Ursula G; Wiemann, Martin; Ma-Hock, Lan; Wohlleben, Wendel; Hartwig, Andrea; Landsiedel, Robert

2015-12-01

In vitro and in vivo genotoxic effects of differently sized amorphous SiO2 nanomaterials were investigated. In the alkaline Comet assay (with V79 cells), non-cytotoxic concentrations of 300 and 100-300μg/mL 15nm-SiO2 and 55nm-SiO2, respectively, relevant (at least 2-fold relative to the negative control) DNA damage. In the Alkaline unwinding assay (with V79 cells), only 15nm-SiO2 significantly increased DNA strand breaks (and only at 100μg/mL), whereas neither nanomaterial (up to 300μg/mL) increased Fpg (Formamidopyrimidine DNA glycosylase)-sensitive sites reflecting oxidative DNA base modifications. In the Comet assay using rat precision-cut lung slices, 15nm-SiO2 and 55nm-SiO2 induced significant DNA damage at ≥100μg/mL. In the Alkaline unwinding assay (with A549 cells), 30nm-SiO2 and 55nm-SiO2 (with larger primary particle size (PPS)) induced significant increases in DNA strand breaks at ≥50μg/mL, whereas 9nm-SiO2 and 15nm-SiO2 (with smaller PPS) induced significant DNA damage at higher concentrations. These two amorphous SiO2 also increased Fpg-sensitive sites (significant at 100μg/mL). In vivo, within 3 days after single intratracheal instillation of 360μg, neither 15nm-SiO2 nor 55nm-SiO2 caused genotoxic effects in the rat lung or in the bone marrow. However, pulmonary inflammation was observed in both test groups with findings being more pronounced upon treatment with 15nm-SiO2 than with 55nm-SiO2. Taken together, the study shows that colloidal amorphous SiO2 with different particle sizes may induce genotoxic effects in lung cells in vitro at comparatively high concentrations. However, the same materials elicited no genotoxic effects in the rat lung even though pronounced pulmonary inflammation evolved. This may be explained by the fact that a considerably lower dose reached the target cells in vivo than in vitro. Additionally, the different time points of investigation may provide more time for DNA damage repair after instillation. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

Highly Enhanced H2 Sensing Performance of Few-Layer MoS2/SiO2/Si Heterojunctions by Surface Decoration of Pd Nanoparticles.

PubMed

Hao, Lanzhong; Liu, Yunjie; Du, Yongjun; Chen, Zhaoyang; Han, Zhide; Xu, Zhijie; Zhu, Jun

2017-10-17

A novel few-layer MoS 2 /SiO 2 /Si heterojunction is fabricated via DC magnetron sputtering technique, and Pd nanoparticles are further synthesized on the device surface. The results demonstrate that the fabricated sensor exhibits highly enhanced responses to H 2 at room temperature due to the decoration of Pd nanoparticles. For example, the Pd-decorated MoS 2 /SiO 2 /Si heterojunction shows an excellent response of 9.2 × 10 3 % to H 2 , which is much higher than the values for the Pd/SiO 2 /Si and MoS 2 /SiO 2 /Si heterojunctions. In addition, the H 2 sensing properties of the fabricated heterojunction are dependent largely on the thickness of the Pd-nanoparticle layer and there is an optimized Pd thickness for the device to achieve the best sensing characteristics. Based on the microstructure characterization and electrical measurements, the sensing mechanisms of the Pd-decorated MoS 2 /SiO 2 /Si heterojunction are proposed. These results indicate that the Pd decoration of few-layer MoS 2 /SiO 2 /Si heterojunctions presents an effective strategy for the scalable fabrication of high-performance H 2 sensors.

Spectroscopic and magnetic studies of highly dispersible superparamagnetic silica coated magnetite nanoparticles

NASA Astrophysics Data System (ADS)

Tadyszak, Krzysztof; Kertmen, Ahmet; Coy, Emerson; Andruszkiewicz, Ryszard; Milewski, Sławomir; Kardava, Irakli; Scheibe, Błażej; Jurga, Stefan; Chybczyńska, Katarzyna

2017-07-01

Superparamagnetic behavior in aqueously well dispersible magnetite core-shell Fe3O4@SiO2 nanoparticles is presented. The magnetic properties of core-shell nanoparticles were measured with use of the DC, AC magnetometry and EPR spectroscopy. Particles where characterized by HR-TEM and Raman spectroscopy, showing a crystalline magnetic core of 11.5 ± 0.12 nm and an amorphous silica shell of 22 ± 1.5 nm in thickness. The DC, AC magnetic measurements confirmed the superparamagnetic nature of nanoparticles, additionally the EPR studies performed at much higher frequency than DC, AC magnetometry (9 GHz) have confirmed the paramagnetic nature of the nanoparticles. Our results show the excellent magnetic behavior of the particles with a clear magnetite structure, which are desirable properties for environmental remediation and biomedical applications.

High photon-to-heat conversion efficiency in the wavelength region of 250–1200 nm based on a thermoelectric Bi2Te3 film structure

PubMed Central

Hu, Er-Tao; Yao, Yuan; Zang, Kai-Yan; Liu, Xin-Xing; Jiang, An-Qing; Zheng, Jia-Jin; Yu, Ke-Han; Wei, Wei; Zheng, Yu-Xiang; Zhang, Rong-Jun; Wang, Song-You; Zhao, Hai-Bin; Yoshie, Osamu; Lee, Young-Pak; Wang, Cai-Zhuang; Lynch, David W.; Guo, Jun-Peng; Chen, Liang-Yao

2017-01-01

In this work, 4-layered SiO2/Bi2Te3/SiO2/Cu film structures were designed and fabricated and the optical properties investigated in the wavelength region of 250–1200 nm for their promising applications for direct solar-thermal-electric conversion. A typical 4-layered film sample with the structure SiO2 (66.6 nm)/Bi2Te3 (7.0 nm)/SiO2 (67.0 nm)/Cu (>100.0 nm) was deposited on a Si or K9-glass substrate by magnetron sputtering. The experimental results agree well with the simulated ones showing an average optical absorption of 96.5%, except in the shorter wavelength region, 250–500 nm, which demonstrates the superior absorption property of the 4-layered film due to the randomly rough surface of the Cu layer resulting from the higher deposition power. The high reflectance of the film structure in the long wavelength region of 2–20 μm will result in a low thermal emittance, 0.064 at 600 K. The simpler 4-layered structure with the thermoelectric Bi2Te3 used as the absorption layer may provide a straightforward way to obtain solar-thermal-electric conversion more efficiently through future study. PMID:28300178

Selective femtosecond laser structuring of dielectric thin films with different band gaps: a time-resolved study of ablation mechanisms

NASA Astrophysics Data System (ADS)

Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2016-12-01

Ultrashort pulse lasers have been increasingly gaining importance for the selective structuring of dielectric thin films in industrial applications. In a variety of works the ablation of thin SiO2 and SiNx films from Si substrates has been investigated with near infrared laser wavelengths with photon energies of about 1.2 eV where both dielectrics are transparent (E_{{gap,SiO2}}≈ 8 eV; E_{{gap,SiN}x}≈ 2.5 eV). In these works it was found that few 100 nm thick SiO2 films are selectively ablated with a "lift-off" initiated by confined laser ablation whereas the SiN_{{x}} films are ablated by a combination of confined and direct laser ablation. In the work at hand, ultrafast pump-probe imaging was applied to compare the laser ablation dynamics of the two thin film systems directly with the uncoated Si substrate—on the same setup and under identical parameters. On the SiO2 sample, results show the pulse absorption in the Si substrate, leading to the confined ablation of the SiO2 layer by the expansion of the substrate. On the SiN_{{x}} sample, direct absorption in the layer is observed leading to its removal by evaporation. The pump-probe measurements combined with reflectivity corrected threshold fluence investigations suggest that melting of the Si substrate is sufficient to initiate the lift-off of an overlaying transparent film—evaporation of the substrate seems not to be necessary.

Exploration on effects of 15 nm SiO2 filler on miscibility, thermal stability and ionic conductivity of PMMA/ENR 50 electrolytes

NASA Astrophysics Data System (ADS)

Zamri, S. F. M.; Latif, F. A.; Ali, A. M. M.; Ibrahim, R.; Azuan, S. I. H. M.; Kamaluddin, N.; Hadip, F.

2017-02-01

The effects of silicon dioxide (SiO2) (15 nm) filler on miscibility, thermal stability and ionic conductivity of polymethyl methacrylate/50% epoxidized narural rubber (PMMA/ENR 50) electrolytes were successfully explored. Samples were prepared by solvent casting method with tetrahydrofuran (THF) as solvent and doped with lithium tetrafluoroborate (LiBF4). Fourier transform infrared spectroscopy (FTIR) confirmed the present of hydrogen bond between PMMA and ENR 50. However, the hydrogen bond was reduced when SiO2 was added. Differential scanning calorimeter (DSC) analysis shows that PMMA/ENR 50 blends exhibit two glass transition temperatures (Tgs) recorded at -35 and 89 °C corresponding to the Tg of ENR 50 rich phase (Tg1) and PMMA rich phase (Tg2), respectively. However, the two Tgs almost merging and reduced when SiO2 was added. Tg1 was found increases as SiO2 weight percent increased. Thermogravimetric analysis (TGA) revealed that thermal degradation temperatures (Tds) of SiO2 filled PMMA/ENR 50 was similar as PMMA/ENR 50. Interestingly, thermal degradation temperatures of the loss of impurities (Td1) and thermal degradation temperatures of PMMA side chain (Td2) were increased when SiO2 was added. Meanwhile thermal degradation temperatures of main PMMA and ENR 50 main chain (Td3) was decreased as SiO2 was added. There was no significant change in Td1, Td2 and Td3 as SiO2 weight percent was varied. Electrochemical impedence spectroscopy (EIS) analysis shows that room temperature ionic conductivity of SiO2 filled PMMA/ENR 50 electrolytes were higher compaed PMMA/ENR 50 electrolyte with two conductivity maxima.

Comparison of the agglomeration behavior of thin metallic films on SiO2

NASA Astrophysics Data System (ADS)

Gadkari, P. R.; Warren, A. P.; Todi, R. M.; Petrova, R. V.; Coffey, K. R.

2005-07-01

The stability of continuous metallic thin films on insulating oxide surfaces is of interest to applications such as semiconductor interconnections and gate engineering. In this work, we report the study of the formation of voids and agglomeration of initially continuous Cu, Au, Ru and Pt thin films deposited on amorphous thermally grown SiO2 surfaces. Polycrystalline thin films having thicknesses in the range of 10-100 nm were ultrahigh vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150-800 °C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all of the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play an important part in deciding the mode of void growth in Au and Pt thin films. Last, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer.

Antireflection coating on metallic substrates for solar energy and display applications

NASA Astrophysics Data System (ADS)

Hsiao, Wei-Yuan; Tang, Chien-Jen; Lee, Kun-Hsien; Jaing, Cheng-Chung; Kuo, Chien-Cheng; Chen, Hsi-Chao; Chang, Hsing-Hua; Lee, Cheng-Chung

2010-08-01

Normally metallic films are required for solar energy and display related coatings. To increase the absorbing efficiency or contrast, it is necessary to apply an antireflection coating (ARC) on the metal substrate. However, the design of a metal substrate is very different from the design of a dielectric substrate, since the optical constant of metallic thin film is very dependent on its thickness and microstructure. In this study, we design and fabricate ARCs on Al substrates using SiO2 and Nb2O5 as the dielectric materials and Nb for the metal films. The ARC successfully deposited on the Al substrate had the following structure: air/SiO2/Nb2O5/Metal/Nb2O5/Al. The measured average reflectance of the ARC is less than 1% in the visible region. We found that it is better to use a highly refractive material than a low refractive material. The thickness of the metallic film can be thicker with the result that it is easier to control and has a lesser total thickness. The total thickness of the ARC is less than 200 nm. We successfully fabricated a solar absorber and OLED device with the ARC structure were successfully fabricated.

Intermixing and thermal oxidation of ZrO2 thin films grown on a-Si, SiN, and SiO2 by metallic and oxidic mode magnetron sputtering

NASA Astrophysics Data System (ADS)

Coloma Ribera, R.; van de Kruijs, R. W. E.; Sturm, J. M.; Yakshin, A. E.; Bijkerk, F.

2017-03-01

The initial growth of DC sputtered ZrO2 on top of a-Si, SiN, and SiO2 layers has been studied by in vacuo high-sensitivity low energy ion scattering for two gas deposition conditions with different oxygen contents (high-O and low-O conditions). This unique surface sensitive technique allowed the determination of surface composition and thicknesses required to close the ZrO2 layer on all three substrates for both conditions. The ZrO2 layer closes similarly on all substrates due to more favorable enthalpies of formation for ZrO2 and ZrSiO4, resulting in passivation of the Si from the substrate. However, this layer closes at about half of the thickness (˜1.7 nm) for low-O conditions due to less oxidative conditions and less energetic particles arriving at the sample, which leads to less intermixing via silicate formation. In contrast, for high-O conditions, there is more ZrSiO4 and/or SiOx formation, giving more intermixing (˜3.4 nm). In vacuo X-ray photoelectron spectroscopy (XPS) measurements revealed similar stoichiometric ZrO2 layers deposited by both conditions and a higher interaction of the ZrO2 layer with the underlying a-Si for high-O conditions. In addition, oxygen diffusion through low-O ZrO2 films on a-Si has been investigated by ex situ angular-resolved XPS of samples annealed in atmospheric oxygen. For temperatures below 400 °C, no additional oxidation of the underlying a-Si was observed. This, together with the amorphous nature and smoothness of these samples, makes ZrO2 a good candidate as an oxidation protective layer on top of a-Si.

Superior Sensitivity of Copper-Based Plasmonic Biosensors.

PubMed

Stebunov, Yury V; Yakubovsky, Dmitry I; Fedyanin, Dmitry Yu; Arsenin, Aleksey V; Volkov, Valentyn S

2018-04-17

Plasmonic biosensing has been demonstrated to be a powerful technique for quantitative determination of molecular analytes and kinetic analysis of biochemical reactions. However, interfaces of most plasmonic biosensors are made of noble metals, such as gold and silver, which are not compatible with industrial production technologies. This greatly limits biosensing applications beyond biochemical and pharmaceutical research. Here, we propose and investigate copper-based biosensor chips fully fabricated with a standard complementary metal-oxide-semiconductor (CMOS) process. The protection of thin copper films from oxidation is achieved with SiO 2 and Al 2 O 3 dielectric films deposited onto the metal surface. In addition, the deposition of dielectric films with thicknesses of only several tens of nanometers significantly improves the biosensing sensitivity, owing to better localization of electromagnetic field above the biosensing surface. According to surface plasmon resonance (SPR) measurements, the copper biosensor chips coated with thin films of SiO 2 (25 nm) and Al 2 O 3 (15 nm) show 55% and 75% higher sensitivity to refractive index changes, respectively, in comparison to pure gold sensor chips. To test biomolecule immobilization, the copper-dielectric biosensor chips are coated with graphene oxide linking layers and used for the selective analysis of oligonucleotide hybridization. The proposed plasmonic biosensors make SPR technology more affordable for various applications and provide the basis for compact biosensors integrated with modern electronic devices.

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

NASA Astrophysics Data System (ADS)

Lachab, M.; Sultana, M.; Fatima, H.; Adivarahan, V.; Fareed, Q.; Khan, M. A.

2012-12-01

This work reports on the dc performance of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) grown on Si (1 1 1) substrate and the study of current dispersion in these devices using various widely adopted methods. The MOSHEMTs were fabricated using a very thin (4.2 nm) SiO2 film as the gate insulator and were subsequently passivated with about 30 nm thick Si3N4 layer. For devices with 2.5 µm long gates and a 4 µm drain-to-source spacing, the maximum saturation drain current density was 822 mA mm-1 at + 4 V gate bias and the peak external transconductance was ˜100 mS mm-1. Furthermore, the oxide layer successfully suppressed the drain and gate leakage currents with the subthreshold current and the gate diode current levels exceeding by more than three orders of magnitude the levels found in their Schottky gate counterparts. Capacitance-voltage and dynamic current-voltage measurements were carried out to assess the oxide quality as well as the devices’ surface properties after passivation. The efficacy of each of these characterization techniques to probe the presence of interface traps and oxide charge in the nitride-based transistors is also discussed.

New opportunities in the preparation of nanocomposites for biomedical applications: revised mechanosynthesis of magnetite-silica nanocomposites

NASA Astrophysics Data System (ADS)

Scano, Alessandra; Cabras, Valentina; Marongiu, Francesca; Peddis, Davide; Pilloni, Martina; Ennas, Guido

2017-02-01

Environmentally friendly preparation of functionalized magnetite-silica (Fe3O4/SiO2) nanocomposites (NCs) with different SiO2 content (6, 20 and 50 wt%) using revised mechanosynthesis is reported. High-energy ball milling of α-Fe2O3, Si and SiO2 mixtures was followed by hydrolysis and condensation of 3-aminopropyl-triethoxysilane. X-ray powder diffraction and transmission electron microscopy showed the formation of almost spherical Fe3O4 nanocrystals with a narrow size distribution (4-6 nm) uniformly dispersed in the amorphous 100-200 nm SiO2 agglomerates. Scanning electron microscopy and energy dispersive spectroscopy were used to study the elemental distribution in the sample. Fourier transform infrared spectroscopy confirmed the NC surface functionalization with amino groups. Magnetic properties were also explored, indicating a homogeneous distribution of magnetic nanoparticles in the silica matrix.

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

PubMed

Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin

2012-12-14

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.

Synthesis of SiO2-Coated Fe3O4 Nanoparticles Using Ultrasound and Its Application in DNA Extraction from Formalin-Fixed, Paraffin-Embedded Human Cancer Tissues

NASA Astrophysics Data System (ADS)

Hieu, Nguyen Minh; Nam, Nguyen Hoang; Huyen, Nguyen Thi; Van Anh, Nguyen Thi; Nghia, Phan Tuan; Khoa, Nguyen Ba; Toan, Nguyen Linh; Luong, Nguyen Hoang

2017-06-01

SiO2-coated Fe3O4 nanoparticles (Fe3O4@SiO2 NPs) were successfully synthesized using ultrasound in order to extract DNA from cancer tissues for application in diagnostics. The core 10.7-nm-diameter Fe3O4 nanoparticles were synthesized by co-precipitation of Fe3+ and Fe2+ as reaction substrates and NH4OH as precipitant, then coated with a thin layer of amorphous silica by a modified Stober method. Further SiO2 coating using alkaline hydrolysis of tetraethyl orthosilicate in ethanol and water mixture was accelerated in the presence of a 37-kHz ultrasound, resulting in the NPs having different sizes of 14.5 nm (version M1), 24.4 nm (version M2), and 34.9 nm (version M3) with saturation magnetization values of 50.2 emu/g, 18.6 emu/g, 10.3 emu/g, respectively. Among the three Fe3O4@SiO2 NPs versions, the M1 NPs allowed extraction of DNAs from 10 mg formalin-fixed and paraffin-embedded (FFPE) tissues of nasopharyngeal carcinoma patients with the highest recovery of about 100-500 ng/ μl and good purity (A260/A280: 1.8-1.9). The extracted DNAs could be used as templates for downstream amplification of 252-bp sequencing specifically for the Braf cancer biomarker gene using polymerase chain reaction (PCR), as well as detection of the pathogenic Epstein-Barr virus (EBV) and the human papilloma-virus (HPV) using real-time PCR. DNA extraction recoveries of both EBV and HPV using Fe3O4@SiO2 NPs M1 were significantly better that those using commercialized Fe3O4@SiO2 microbeads, as indicated by lower threshold cycles of all fluorescent signals including fluorescein amidite (FAM) dye representative for EBV infection, hexachlorofluorescein (HEX) dye representative for β-globin (internal control), and SYBR Green dye representative for HPV infection in tested clinical samples from patients with nasopharyngeal carcinoma (NPC).

Quasi-periodic photonic crystal Fabry–Perot optical filter based on Si/SiO2 for visible-laser spectral selectivity

NASA Astrophysics Data System (ADS)

Qi, Dong; Wang, Xian; Cheng, Yongzhi; Chen, Fu; Liu, Lei; Gong, Rongzhou

2018-06-01

We report on a 1D quasi-periodic photonic crystal Fabry–Perot optical filter Cs(Si/SiO2)3(SiO2/Si)3 for spectral selectivity of visible light and 1.55 µm laser. A material transparency interval of 1.03–2.06 µm makes Si a unique choice of high refractive index material. Owing to the CIE 1931 standard and equal inclination interference, the designed structure can be successfully fabricated with a certain color (brown, khaki, or blue) corresponding to the different Cs physical thickness d and response R(λ). In addition, the peak transmittance T max of the proposed structure can reach as high as 92.56% (Cs  =  20 nm), 90.83% (Cs  =  40 nm), and 88.85% (Cs  =  60 nm) with a relatively narrow full width at half maximum of 4.4, 4.6, and 4.8 nm at 1.55 µm. The as-prepared structure indicates that it is feasible for a photonic crystal Fabry–Perot optical filter to achieve visible-laser (1.55 µm) spectral selectivity.

Novel hydrophobic PDVB/R-SiO2 for adsorption of volatile organic compounds from highly humid gas stream.

PubMed

Lu, Han-feng; Cao, Jie-jing; Zhou, Ying; Zhan, De-li; Chen, Yin-fei

2013-11-15

A novel organic-inorganic hydrophobic polydivinylbenzene-silica adsorbent (PDVB/R-SiO2) was successfully prepared by introducing a specific amount of divinylbenzene and solvent (i.e., tetrahydrofuran) to SiO2pores and initiating polymerization under solvothermal conditions. New smaller structures and surface areas were formed in the SiO2 pores. The PDVB/R-SiO2-0.5 samples exhibited a bimodal pore size distribution with both SiO2 micropores/mesopores (0.5-2.0 nm) and mesopores (2.0-5.0 nm). The surface areas increased from 116 m(2)/g (SiO2) to 246 m(2)/g. The breakthrough curves of toluene adsorption indicated that the amount adsorbed on PDVB/R-SiO2-0.5 was 12 times higher than that on SiO2. The highly humid environment exhibited no effect on adsorption because the surface of PDVB was functionalized. The adsorbed toluene was easily desorbed in hot N2 stream at 100 °C. After 10 adsorption-desorption cycles, PDVB/R-SiO2-0.5 continued exhibiting excellent adsorption, indicating superior structural and regeneration abilities. Copyright © 2013 Elsevier B.V. All rights reserved.

Monitoring migration and transformation of nanomaterials in polymeric composites during accelerated aging

NASA Astrophysics Data System (ADS)

Vilar, G.; Fernández-Rosas, E.; Puntes, V.; Jamier, V.; Aubouy, L.; Vázquez-Campos, S.

2013-04-01

The incorporation of small amounts of nanoadditives in polymeric compounds can introduce new mechanical, physical, electrical, magnetic, thermal and/or optical properties. The properties of these advanced materials have enabled new applications in several industrial sectors (electronics, automotive, textile...). In particular, for the nanomaterials (NM) described in this work, multi-walled carbon nanotubes (MWCNT) and silicon dioxide nanoparticles (SiO2 NP), the following properties have been described: MWCNT act as nucleating agents in thermoplastics, and change viscosity, affecting dispersion, orientation, and therefore mechanical, thermal, and electrical properties; and SiO2 NP act as flame retardant and display improved electrical and mechanical properties. The work described here is focused on the evaluation of the migration and transformation of NM included in polymer nanocomposites (NC) during accelerated climatic ageing. To this aim, we generated polyamide 6 (PA6) NC with different degree of compatibility between the NM and the polymeric matrix. These NC were submitted to accelerated aging conditions to simulate outdoor conditions (simulation of the use phase of the polymeric NC). The NC contain as nanofillers MWCNT and SiO2 NP with different surface properties to influence the compatibility with the polymeric matrix. The generated NC were evaluated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) with Energy-dispersive X-ray spectroscopy (EDX), thermogravimetry (TGA) and differential scanning calorimetry (DSC) before and after the aging process, to monitor the compatibility of the NM with the matrix: dispersion within the matrix, migration during aging, and modification of the polymer properties. The dispersion of SiO2 NP in the NC depended on their compatibility with the matrix. However, independently of their compatibility with the matrix, SiO2 NP were aggregated at the end of the accelerated aging process. In addition, degradation of the matrix and migration of nanoparticles to the surface was observed as well in the different types of SiO2 NP aged NC. Oppositely, compatibilized MWCNT (MWCNTMB) decreased the degradation of the polymer. Nevertheless, the nanomaterial migrated likewise to the surface during the ageing process. In order to evaluate the possible changes in the structure of nanomaterials due to the aging process, NM were extracted from the polymer by calcination. The nanomaterials extracted were analyzed by TGA, Fourier transform infrared spectroscopy (FT-IR), BET and TEM and its properties compared with calcinated raw NM. SiO2 hydrophilic nanoparticles were not affected by the aging process. However, both types of MWCNT were affected by the aging of the NC.

Phthalocyanine-Conjugated Upconversion NaYF4 :Yb3+ /Er3+ @SiO2 Nanospheres for NIR-Triggered Photodynamic Therapy in a Tumor Mouse Model.

PubMed

Kostiv, Uliana; Patsula, Vitalii; Noculak, Agnieszka; Podhorodecki, Artur; Větvička, David; Poučková, Pavla; Sedláková, Zdenka; Horák, Daniel

2017-12-19

Photodynamic therapy (PDT) has garnered immense attention as a minimally invasive clinical treatment modality for malignant cancers. However, its low penetration depth and photodamage of living tissues by UV and visible light, which activate a photosensitizer, limit the application of PDT. In this study, monodisperse NaYF 4 :Yb 3+ /Er 3+ nanospheres 20 nm in diameter, that serve as near-infrared (NIR)-to-visible light converters and activators of a photosensitizer, were synthesized by high-temperature co-precipitation of lanthanide chlorides in a high-boiling organic solvent (octadec-1-ene). The nanoparticles were coated with a thin shell (≈3 nm) of homogenous silica via the hydrolysis and condensation of tetramethyl orthosilicate. The NaYF 4 :Yb 3+ /Er 3+ @SiO 2 particles were further functionalized by methacrylate-terminated groups via 3-(trimethoxysilyl)propyl methacrylate. To introduce a large number of reactive amino groups on the particle surface, methacrylate-terminated NaYF 4 :Yb 3+ /Er 3+ @SiO 2 nanospheres were modified with a branched polyethyleneimine (PEI) via Michael addition. Aluminum carboxyphthalocyanine (Al Pc-COOH) was then conjugated to NaYF 4 :Yb 3+ /Er 3+ @SiO 2 -PEI nanospheres via carbodiimide chemistry. The resulting NaYF 4 :Yb 3+ /Er 3+ @SiO 2 -PEI-Pc particles were finally modified with succinimidyl ester of poly(ethylene glycol) (PEG) in order to alleviate their future uptake by the reticuloendothelial system. Upon 980 nm irradiation, the intensive red emission of NaYF 4 :Yb 3+ /Er 3+ @SiO 2 -PEI-Pc-PEG nanoparticles completely vanished, indicating efficient energy transfer from the nanoparticles to Al Pc-COOH, which generates singlet oxygen ( 1 O 2 ). Last but not least, NaYF 4 :Yb 3+ /Er 3+ @SiO 2 -PEI-Pc-PEG nanospheres were intratumorally administered into mammary carcinoma MDA-MB-231 growing subcutaneously in athymic nude mice. Extensive necrosis developed at the tumor site of all mice 24-48 h after irradiation by laser at 980 nm wavelength. The results demonstrate that the NaYF 4 :Yb 3+ /Er 3+ @SiO 2 -PEI-Pc-PEG nanospheres have great potential as a novel NIR-triggered PDT nanoplatform for deep-tissue cancer therapy. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

NASA Astrophysics Data System (ADS)

Jong-Woong Kim,; Young-Seok Kim,; Sung-Jei Hong,; Tae-Hwan Hong,; Jeong-In Han,

2010-05-01

SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

Parameter extraction of coupling-of-modes equations including coupling between two surface acoustic waves on SiO2/Cu/LiNbO3 structures

NASA Astrophysics Data System (ADS)

Huang, Yulin; Bao, Jingfu; Li, Xinyi; Zhang, Benfeng; Omori, Tatsuya; Hashimoto, Ken-ya

2018-07-01

This paper describes extraction of parameters of an extended coupling-of-modes (COM) model including coupling between Rayleigh and shear-horizontal (SH) surface acoustic waves (SAW) on the SiO2-overlay/Cu-grating/LiNbO3-substrate structure. First, dispersion characteristics of two SAWs are calculated by the finite element method (FEM), and are fitted with those given by the extended COM. Then variation of COM parameters is expressed in polynomials in terms of the SiO2 and Cu thicknesses and the rotation angle Θ of LiNbO3. Then it is shown how the optimal Θ giving the SH SAW suppression changes with the thicknesses. The result agrees well with that obtained directly by FEM. It is also shown the optimal Θ changes abruptly at certain Cu thickness, and is due to decoupling between two SAW modes.

Laser action in chromium-activated forsterite for near infrared excitation

NASA Technical Reports Server (NTRS)

Petricevic, V.; Gayen, S. K.; Alfano, R. R.

1988-01-01

This paper reports on laser action in chromium-doped forsterite (Cr:Mg2SiO4) for 1064-nm excitation of the crystal's double-hump absorption band spanning the 850-1200-nm wavelength range. The cavity arrangement used for obtaining laser action in Cr:Mg2SiO2 was similar to that described by Petricevic et al. (1988). The fundamental and second harmonic emissions from a Q-switched Nd:YAG laser operating at a 10-Hz repetition rate were used for excitation of the NIR and visible bands, respectively. Pulsed laser action was readily observed for both the 1064-nm and 532-nm pumping at or above the respective thresholds. The laser parameters of the 532-nm and 1064-nm excitations were similar, indicating that the IR band is responsible for laser action for both excitations.

Pulsed laser-deposited VO2 thin films on Pt layers

NASA Astrophysics Data System (ADS)

Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

2013-03-01

VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

Self-assembly and electrical characteristics of 4-pentynoic acid functionalized Fe3O4-γ-Fe2O3 nanoparticles on SiO2/n-Si

NASA Astrophysics Data System (ADS)

Baharuddin, Aainaa Aqilah; Ang, Bee Chin; Wong, Yew Hoong

2017-11-01

A novel investigation on a relationship between temperature-influential self-assembly (70-300 °C) of 4-pentynoic acid functionalized Fe3O4-γ-Fe2O3 nanoparticles (NPs) on SiO2/n-Si with electrical properties was reported with the interests for metal-oxide-semiconductor applications. X-ray diffractometer (XRD) analysis conveyed that 8 ± 1 nm of the NPs were assembled. Increasing heating temperature induced growth of native oxide (SiO2). Raman analysis confirmed the coexistence of Fe3O4-γ-Fe2O3. Attenuated Total Reflectance Infrared (ATR-IR) spectra showed that self-assembly occurred via Sisbnd Osbnd C linkages. While Sisbnd Osbnd C linkages were broken down at elevated temperatures, formations of Si-OH defects were amplified; a consequence of physisorbed surfactants disintegration. Atomic force microscopy (AFM) showed that sample with more physisorbed surfactants exhibited the highest root-mean-square (RMS) roughness (18.12 ± 7.13 nm) whereas sample with lesser physisorbed surfactants displayed otherwise (12.99 ± 4.39 nm RMS roughness). Field Emission Scanning Electron Microscope (FE-SEM) analysis showed non-uniform aggregation of the NPs, deposited as film (12.6 μm thickness). The increased saturation magnetization (71.527 A m2/kg) and coercivity (929.942 A/m) acquired by vibrating sample magnetometer (VSM) of the sample heated at 300 °C verified the surfactants' disintegration. Leakage current density-electric field (J-E) characteristics showed that sample heated at 150 °C with the most aggregated NPs as well as the most developed Sisbnd Osbnd C linkages demonstrated the highest breakdown field and barrier height at 2.58 × 10-3 MV/cm and 0.38 eV respectively. Whereas sample heated at 300 °C with the least Sisbnd Osbnd C linkages as well as lesser aggregated NPs showed the lowest breakdown field and barrier height at 1.08 × 10-3 MV/cm and 0.19 eV respectively. This study opens up better understandings on how formation and breaking down of covalent linkages as well as accumulation of defects, particularly prior temperature influential self-assembly at the interfaces, affected electrical breakdown field and barrier height. Hence, possible future development of self-assembly silicon-based metal-oxide-semiconductor (MOS) structure particularly in the presence of SiO2 can be deliberated.

Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

NASA Astrophysics Data System (ADS)

Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Ohji, Y.

1993-12-01

The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.

Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.

PubMed

Chakrabarti, Somsubhra; Maikap, Siddheswar; Samanta, Subhranu; Jana, Surajit; Roy, Anisha; Qiu, Jian-Tai

2017-10-04

The resistive switching characteristics of a scalable IrO x /Al 2 O 3 /W cross-point structure and its mechanism for pH/H 2 O 2 sensing along with glucose detection have been investigated for the first time. Porous IrO x and Ir 3+ /Ir 4+ oxidation states are observed via high-resolution transmission electron microscope, field-emission scanning electron spectroscopy, and X-ray photo-electron spectroscopy. The 20 nm-thick IrO x devices in sidewall contact show consecutive long dc cycles at a low current compliance (CC) of 10 μA, multi-level operation with CC varying from 10 μA to 100 μA, and long program/erase endurance of >10 9 cycles with 100 ns pulse width. IrO x with a thickness of 2 nm in the IrO x /Al 2 O 3 /SiO 2 /p-Si structure has shown super-Nernstian pH sensitivity of 115 mV per pH, and detection of H 2 O 2 over the range of 1-100 nM is also achieved owing to the porous and reduction-oxidation (redox) characteristics of the IrO x membrane, whereas a pure Al 2 O 3 /SiO 2 membrane does not show H 2 O 2 sensing. A simulation based on Schottky, hopping, and Fowler-Nordheim tunneling conduction, and a redox reaction, is proposed. The experimental I-V curve matches very well with simulation. The resistive switching mechanism is owing to O 2- ion migration, and the redox reaction of Ir 3+ /Ir 4+ at the IrO x /Al 2 O 3 interface through H 2 O 2 sensing as well as Schottky barrier height modulation is responsible. Glucose at a low concentration of 10 pM is detected using a completely new process in the IrO x /Al 2 O 3 /W cross-point structure. Therefore, this cross-point memory shows a method for low cost, scalable, memory with low current, multi-level operation, which will be useful for future highly dense three-dimensional (3D) memory and as a bio-sensor for the future diagnosis of human diseases.

Photoluminescence analysis of Ce3+:Zn2SiO4 & Li++ Ce3+:Zn2SiO4: phosphors by a sol-gel method

NASA Astrophysics Data System (ADS)

Babu, B. Chandra; Vandana, C. Sai; Guravamma, J.; Rudramadevi, B. Hemalatha; Buddhudu, S.

2015-06-01

Here, we report on the development and photoluminescence analysis of Zn2SiO4, Ce3+:Zn2SiO4 & Li+ + Ce3+: Zn2SiO4 novel powder phosphors prepared by a sol-gel technique. The total amount of Ce3+ ions was kept constant in this experiment at 0.05 mol% total doping. The excitation and emission spectra of undoped (Zn2SiO4) and Ce3+ doped Zn2SiO4 and 0.05 mol% Li+ co-doped samples have been investigated. Cerium doped Zn2SiO4 powder phosphors had broad blue emission corresponding to the 2D3/2→2FJ transition at 443nm. Stable green-yellow-red emission has been observed from Zn2SiO4 host matrix and also we have been observed the enhanced luminescence of Li+ co-doped Zn2SiO4:Ce3+. Excitation and emission spectra of these blue luminescent phosphors have been analyzed in evaluating their potential as luminescent screen coating phosphors.

Control of resonant wavelength from organic light-emitting materials by use of a Fabry-Perot microcavity structure.

PubMed

Jung, Boo Young; Kim, Nam Young; Lee, Changhee; Hwangbo, Chang Kwon; Seoul, Chang

2002-06-01

We report the fabrication of Fabry-Perot microcavity structures with the organic light-emitting material tris-(8-hydroxyquinoline) aluminum (Alq3) and derive their optical properties by measuring their photoluminescence (PL) and absorption. Silver and a TiO2-SiO2 multilayer were used as metal and dielectric reflectors, respectively, in a Fabry-Perot microcavity structure. Three types of microcavity were prepared: type A consisted of [air[Ag[Alq3]Ag]glass]; type B, of [air[dielectric[Alq3]dielectric]glass]; and type C, of [air[Ag[Alq2]dielectric]glass]. A bare Alq3 film of [air[Alq3]glass] had its PL peak near 514 nm, and its full width at half-maximum (FWHM) was 80 nm. The broad FWHM of a bare Alq3 film was reduced to 15-27.5, 7-10.5, and 16-16.6 nm for microcavity types A, B, and C, respectively. Also, we could control the PL peak of the microcavity structure by changing the spacer thickness, the amount of phase change on reflection, and the angle of incidence.

Interactions between DPPC as a component of lung surfactant and amorphous silica nanoparticles investigated by HILIC-ESI-MS.

PubMed

Silina, Yuliya E; Welck, Jennifer; Kraegeloh, Annette; Koch, Marcus; Fink-Straube, Claudia

2016-09-01

This paper reports a rapid HILIC-ESI-MS assay to quantify dipalmitoylphosphatidylcholine (DPPC) as component of lung surfactant for nanosafety studies. The technique was used to investigate the concentration-dependent sorption of DPPC to two-sizes of amorphous SiO2 nanoparticles (SiO2-NPs) in a MeOH:H2O (50/50v/v) mixture and in cell culture medium. In MeOH:H2O (50/50v/v), the sorption of DPPC was positively correlated with the nanoparticles concentration. A substantial affinity of small amorphous SiO2-NPs (25nm) to DPPC standard solution compared to bigger SiO2-NPs (75nm) was not confirmed for biological specimens. After dispersion of SiO2-NPs in DPPC containing cell culture medium, the capacity of the SiO2-NPs to bind DPPC was reduced in comparison to a mixture of MeOH:H2O (50/50v/v) regardless from the nanoparticles size. Furthermore, HILIC-ESI-MS revealed that A549 cells internalized DPPC during growth in serum containing medium complemented with DPPC. This finding was in a good agreement with the potential of alveolar type II cells to recycle surfactant components. Binding of lipids present in the cell culture medium to amorphous SiO2-NPs was supported by means of HILIC-ESI-MS, TEM and ICP-MS independently. Copyright © 2016 Elsevier B.V. All rights reserved.

Design and laser damage properties of a dichroic beam combiner coating for 22.5-deg incidence and S polarization with high transmission at 527 nm and high reflection at 1054 nm

DOE PAGES

Bellum, John C.; Field, Ella S.; Kletecka, Damon E.; ...

2016-10-12

We designed a dichroic beam combiner coating with 11 HfO 2/SiO 2 layer pairs and deposited it on a large substrate. It provides high transmission (HT) at 527 nm and high reflection (HR) at 1054 nm for a 22.5-deg angle of incidence (AOI), S polarization (Spol), and uses near half-wave layer thicknesses for HT at 527 nm, modified for HR at 1054 nm. The two options for the beam combiner each require that a high intensity beam be incident on the coating from within the substrate (from glass). We analyze the laser-induced damage threshold (LIDT) differences between the two optionsmore » in terms of the 527- and 1054-nm E-field behaviors for air → coating and glass → coating incidences. This indicates that LIDTs should be higher for air → coating than for glass → coating incidence. LIDT tests at the use AOI, Spol with ns pulses at 532 and 1064 nm confirm this, with glass → coating LIDTs about half that of air → coating LIDTs. Lastly, these results clearly indicate that the best beam combiner option is for the high intensity 527 and 1054 nm beams to be incident on the coating from air and glass, respectively.« less

Design and laser damage properties of a dichroic beam combiner coating for 22.5-deg incidence and S polarization with high transmission at 527 nm and high reflection at 1054 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bellum, John C.; Field, Ella S.; Kletecka, Damon E.

We designed a dichroic beam combiner coating with 11 HfO 2/SiO 2 layer pairs and deposited it on a large substrate. It provides high transmission (HT) at 527 nm and high reflection (HR) at 1054 nm for a 22.5-deg angle of incidence (AOI), S polarization (Spol), and uses near half-wave layer thicknesses for HT at 527 nm, modified for HR at 1054 nm. The two options for the beam combiner each require that a high intensity beam be incident on the coating from within the substrate (from glass). We analyze the laser-induced damage threshold (LIDT) differences between the two optionsmore » in terms of the 527- and 1054-nm E-field behaviors for air → coating and glass → coating incidences. This indicates that LIDTs should be higher for air → coating than for glass → coating incidence. LIDT tests at the use AOI, Spol with ns pulses at 532 and 1064 nm confirm this, with glass → coating LIDTs about half that of air → coating LIDTs. Lastly, these results clearly indicate that the best beam combiner option is for the high intensity 527 and 1054 nm beams to be incident on the coating from air and glass, respectively.« less

Enhancement of red emission intensity of Ca2Al2SiO7:Eu3+ phosphor by MoO3 doping or excess SiO2 addition for application to white LEDs

NASA Astrophysics Data System (ADS)

Jiao, H. Y.; LiMao, C. R.; Chen, Q.; Wang, P. Y.; Cai, R. C.

2018-01-01

Ca1.86Al2(Si1-xMox)O7:0.14Eu3+ and Ca1.86Al2Si1+yO7+2y:0.14 Eu3+ were synthesized by solid-state reaction. X-ray powder diffraction, excitation and emission spectra were used to investigate their structures and photoluminescence properties. The results shows that the phosphor Ca1.86Al2SiO7:0.14Eu3+ cannot be excited efficiently by light of 393 nm. The introduced Mo ion does not change the position of the excitation peak, but increases both the absorption at 400nm and the emission intensity of Eu3+. The intense red emitting phosphor Ca1.86Al2(Si0.95Mo0.05)O7:0.14Eu3+ was obtained, which has 67% enhanced luminous intensity compared to that of the undoped sample Ca1.86Al2SiO7:0.14Eu3+. Otherwise, SiO2 excess of non-stoichiometric phosphors Ca1.86Al2Si1+yO7+2y:0.14Eu3+ showed the characteristic pattern of a tetragonal structure with a small SiO2 concentration. The optimal phosphor of Ca1.86Al2Si1.1O7.2:0.14Eu3+ has a luminous intensity about two times higher than that of the original stoichiometric phosphor Ca1.86Al2SiO7:0.14Eu3+. We confirmed that the photoluminescence intensity of the obtained phosphors is fairly enhanced by excessive SiO2. The mechanism of this photoluminescence enhancement is discussed in this paper.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Anisotropic deformation of metallo-dielectric core shell colloids under MeV ion irradiation

NASA Astrophysics Data System (ADS)

Penninkhof, J. J.; van Dillen, T.; Roorda, S.; Graf, C.; van Blaaderen, A.; Vredenberg, A. M.; Polman, A.

2006-01-01

We have studied the deformation of metallo-dielectric core-shell colloids under 4 MeV Xe, 6 and 16 MeV Au, 30 MeV Si and 30 MeV Cu ion irradiation. Colloids of silica surrounded by a gold shell, with a typical diameter of 400 nm, show anisotropic plastic deformation under MeV ion irradiation, with the metal flowing conform the anisotropically deforming silica core. The 20 nm thick metal shell imposes a mechanical constraint on the deforming silica core, reducing the net deformation strain rate compared to that of pure silica. In colloids consisting of a Au core and a silica shell, the silica expands perpendicular to the ion beam, while the metal core shows a large elongation along the ion beam direction, provided the silica shell is thick enough (>40 nm). A minimum electronic energy loss of 3.3 keV/nm is required for shape transformation of the metal core. Silver cores embedded in a silica shell show no elongation, but rather disintegrate. Also in planar SiO2 films, Au and Ag colloids show entirely different behavior under MeV irradiation. We conclude that the deformation model of core-shell colloids must include ion-induced particle disintegration in combination with thermodynamical effects, possibly in combination with mechanical effects driven by stresses around the ion tracks.

Cell viability studies and operation in cellular culture medium of n-type organic field-effect transistors

NASA Astrophysics Data System (ADS)

Barra, M.; Viggiano, D.; Di Capua, R.; Di Girolamo, F.; Santoro, F.; Taglialatela, M.; Cassinese, A.

2012-02-01

The possibility of the fabrication of organic devices suitable to be applied in bio-sensing fields depends largely on the availability of organic compounds displaying robust electrical properties even in aqueous solutions and effective biocompatibility features. In this paper, we report about the good cellular biocompatibility and the electrical response stability in an ionic medium of n-type organic transistors based on the recently developed PDI-8CN2 oligomer. The biocompatibility has been tested by analyzing the adhesion and viability of two different cell lines, human epithelial HeLa cells and murine neuronal F11 cells, on PDI-8CN2 films grown by organic molecular beam deposition (OMBD) on SiO2 substrates. The effect of film thickness on cell attachment was also tested. Uncoated SiO2 substrates were used as control surfaces and sexithiophene (T6) as device testing control. Moreover, the possible toxicity of -CN groups of PDI-8CN2 was tested on HeLa cell cultures, using PDI-8 and T6 molecules as controls. Results showed that, although at high concentration these organic compounds are toxic in solution, if they are presented in form of film, cell lines can attach and grow on them. The electrical response stability of PDI-8CN2 transistors in a cellular culture medium characterized by high concentrations of ionic species has been also investigated. For this purpose, low-voltage operation devices with VGS ranging from -5 V to 5 V, able to strongly reduce the influence of Faradaic currents coming from the electrical operation in an highly ionic environment, have been fabricated on 35 nm thick SiO2 layers and electrically characterized. These results are useful to experimentally define the main critical issues to be further addressed for the fabrication of reliable bio-sensors based on organic transistors.

Structural Evaluation of 5,5'-Bis(naphth-2-yl)-2,2'-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric.

PubMed

Lauritzen, Andreas E; Torkkeli, Mika; Bikondoa, Oier; Linnet, Jes; Tavares, Luciana; Kjelstrup-Hansen, Jakob; Knaapila, Matti

2018-05-25

We report on the structure and morphology of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) films in bottom-contact organic field-effect transistors (OFETs) with octadecyltrichlorosilane (OTS) coated SiO 2 gate dielectric, characterized by atomic force microscopy (AFM), grazing-incidence X-ray diffraction (GIXRD), and electrical transport measurements. Three types of devices were investigated with the NaT2 thin-film deposited either on (1) pristine SiO 2 (corresponding to higher surface energy, 47 mJ/m 2 ) or on OTS deposited on SiO 2 under (2) anhydrous or (3) humid conditions (corresponding to lower surface energies, 20-25 mJ/m 2 ). NaT2 films grown on pristine SiO 2 form nearly featureless three-dimensional islands. NaT2 films grown on OTS/SiO 2 deposited under anhydrous conditions form staggered pyramid islands where the interlayer spacing corresponds to the size of the NaT2 unit cell. At the same time, the grain size measured by AFM increases from hundreds of nanometers to micrometers and the crystal size measured by GIXRD from 30 nm to more than 100 nm. NaT2 on OTS/SiO 2 deposited under humid conditions also promotes staggered pyramids but with smaller crystals 30-80 nm. The NaT2 unit cell parameters in OFETs differ 1-2% from those in bulk. Carrier mobilities tend to be higher for NaT2 layers on SiO 2 (2-3 × 10 -4 cm 2 /(V s)) compared to NaT2 on OTS (2 × 10 -5 -1 × 10 -4 cm 2 /(V s)). An applied voltage does not influence the unit cell parameters when probed by GIXRD in operando.

Influence of Nanomaterial Compatibilization Strategies on Polyamide Nanocomposites Properties and Nanomaterial Release during the Use Phase.

PubMed

Fernández-Rosas, Elisabet; Vilar, Gemma; Janer, Gemma; González-Gálvez, David; Puntes, Victor; Jamier, Vincent; Aubouy, Laurent; Vázquez-Campos, Socorro

2016-03-01

The incorporation of small amounts of nanofillers in polymeric matrices has enabled new applications in several industrial sectors. The nanofiller dispersion can be improved by modifying the nanomaterial (NM) surface or predispersing the NMs to enhance compatibility. This study evaluates the effect of these compatibilization strategies on migration/release of the nanofiller and transformation of polyamide-6 (PA6), a thermoplastic polymer widely used in industry during simulated outdoors use. Two nanocomposites (NCs) containing SiO2 nanoparticles (NPs) with different surface properties and two multiwalled carbon nanotube (MWCNT) NCs obtained by different addition methods were produced and characterized, before and after accelerated wet aging conditions. Octyl-modified SiO2 NPs, though initially more aggregated than uncoated SiO2 NPs, reduced PA6 hydrolysis and, consequently, NM release. Although no clear differences in dispersion were observed between the two types of MWCNT NCs (masterbatch vs direct addition) after manufacture, the use of the MWCNT masterbatch reduced PA6 degradation during aging, preventing MWCNT accumulation on the surface and further release or potential exposure by direct contact. The amounts of NM released were lower for MWCNTs (36 and 108 mg/m(2)) than for SiO2 NPs (167 and 730 mg/m(2)), being lower in those samples where the NC was designed to improve the nanofiller-matrix interaction. Hence, this study shows that optimal compatibilization between NM and matrix can improve NC performance, reducing polymer degradation and exposure and/or release of the nanofiller.

Ultrasonochemically conjugated metalloid/triblock copolymer nanocomposite and subsequent thin solid laminate growth for surface and interface studies.

PubMed

Veerapandian, Murugan; Yun, KyuSik

2010-09-07

Polymer and metalloid nanoparticles can be conjugated in a symphonized manner using ultrasonochemical force to obtain hybrid nanocomposites. The process is demonstrated using polymer poly(ethylene glycol) (PEG), metalloid SiO(2)@Ag, and triblock copolymer ABA. The acoustic microstreaming and cavitation force from the ultrasonics are crucial parameters that determine the harmonized PEG stabilization and ABA blending of the metalloid nanocomposites that are obtained. Surface plasmon resonance in the resulting hybrid systems are examined by UV-vis absorbance spectroscopy. The resulting PEG-stabilized SiO(2)-Ag conjugated with a triblock copolymer poly(p-dioxanone-co-caprolactone)-block-poly(ethylene oxide)-block-poly(p-dioxanone-co-caprolactone) (PPDO-co-PCL-b-PEG-b-PPDO-co-PCL/ABA) (PEG-SiO(2)@Ag/ABA) shows a red shift of 20 nm (410 nm) from its initial resonance at 390 nm (PEG-SiO(2)@Ag). Nanocomposite particles were then spin-coated on a glass substrate to obtain the growth of thin solid laminates (thickness 27 microm). Structural functionality was studied by FT-IR, (1)H NMR, and FT-Raman spectroscopy. Morphological properties were ensured from FE-SEM, HRTEM, AFM, and FIB-SEM. Identity and crystallinity of the prepared nanocomposite were confirmed by XRD analysis. A very low weight percentile loss of the fabricated nanocomposites ensures its high thermal stability. Fabricated nanocomposite laminate might have a role in coating, reinforcement, and resistance and as substrate additives for a variety of surface and interface studies. Further, the ultrasonochemical approach utilized here could also be a smart system to fabricate other heteronanostructures in a single platform.

Formation of Fe3O4@SiO2@C/Ni hybrids with enhanced catalytic activity and histidine-rich protein separation.

PubMed

Zhang, Yanwei; Zhang, Min; Yang, Jinbo; Ding, Lei; Zheng, Jing; Xu, Jingli; Xiong, Shenglin

2016-09-21

In this paper, we have developed an extended Stöber method to construct a Ni(2+)-polydopamine (PDA) complex thin coating on Fe3O4@SiO2 spheres, which can be carbonized to produce hybrid composites with metallic nickel nanoparticles embedded in a PDA-derived thin graphitic carbon layer (named Fe3O4@SiO2@C/Ni). Interestingly, by introducing a thin SiO2 spacer layer between PDA-Ni(2+) and Fe3O4, the reverse electron transfer from PDA to Fe3O4 is probably able to be suppressed in the calcination process, which leads to the in situ reduction of only Ni(2+) by PDA instead of Fe3O4 and Ni(2+). Consequently, the size and density of nickel nanoparticles on the surface of SiO2@Fe3O4 can be finely adjusted. Moreover, it is found that the ability of tuning nickel nanoparticles is mainly dependent on the thickness of the spacer layer. When the thickness of the SiO2 spacer is beyond the electron penetration depth, the size and density of nickel nanoparticles can be exactly tuned. The as-prepared Fe3O4@SiO2@C/Ni was employed as the catalyst to investigate the catalytic performance in the reduction of 4-nitrophenol (4-NP); furthermore, nickel nanoparticles decorated on Fe3O4@SiO2@C spheres display a strong affinity to His-tagged proteins (BHb and BSA) via a specific metal affinity force between polyhistidine groups and nickel nanoparticles.

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

NASA Astrophysics Data System (ADS)

de Mas, Nuria; Schmidt, Martin A.; Jensen, Klavs F.

2014-03-01

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50-650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm-2. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO2) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

SiC Protective Coating for Photovoltaic Retinal Prostheses

PubMed Central

Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

2016-01-01

Objective To evaluate PECVD SiC as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach Retinal prostheses were implanted in rats subretinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiNx and thermal SiO2 were measured in accelerated soaking tests in saline at 87°C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results At 87°C SiNx dissolved at 18.3±0.3nm/day, while SiO2 grown at high temperature (1000°C) dissolved at 1.04±0.08A/day. SiC films demonstrated the best stability, with no quantifiable change after 112 days. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance SiC coatings demonstrating no erosion in accelerated aging test for 112 days at 87°C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4-month follow-up in vivo. The optimal thickness of SiC layers is about 560nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects. PMID:27323882

Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal-Organic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kuwabara, Hiroki; Sumi, Akihiro; Okamoto, Shoji; Hoko, Hiromasa; Cross, Jeffrey S.; Funakubo, Hiroshi

2009-04-01

Pb(Zr0.35Ti0.65)O3 (PZT) films 170 nm thick were prepared at 415 °C by pulsed metal-organic chemical vapor deposition. The (111)-oriented PZT films with local epitaxial growth were obtained on (111)SrRuO3/(111)Pt/TiO2/SiO2/Si substrates and their ferroelectricities were ascertained. Ferroelectricity was improved by postannealing under O2 gas flow up to 550 °C. Larger remanent polarization and better fatigue endurance were obtained using a SrRuO3 top electrode compared to a Pt top electrode for PZT films after annealing at 500 °C.

Facile synthesis and paramagnetic properties of Fe3O4@SiO2 core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Yang, Lili; Zou, Ping; Cao, Jian; Sun, Yunfei; Han, Donglai; Yang, Shuo; Chen, Gang; Kong, Xiangwang; Yang, Jinghai

2014-12-01

The Fe3O4@SiO2 core-shell nanoparticles (NPs) had been successfully fabricated via direct decomposition of tetraethyl orthosilicate (TEOS) in solution under the presence of as-synthesized Fe3O4 NPs prepared by chemical coprecipitation method. The structure and magnetic properties of Fe3O4@SiO2 NPs were characterized and the result indicated that Fe3O4@SiO2 NPs are about 12 nm in size with paramagnetic property. The possible growth and magnetic mechanism was discussed in detail.

Tunable green/red luminescence by infrared upconversion in biocompatible forsterite nanoparticles with high erbium doping uptake

NASA Astrophysics Data System (ADS)

Zampiva, Rúbia Young Sun; Acauan, Luiz Henrique; Venturini, Janio; Garcia, Jose Augusto Martins; da Silva, Diego Silverio; Han, Zhaohong; Kassab, Luciana Reyes Pires; Wetter, Niklaus Ursus; Agarwal, Anuradha; Alves, Annelise Kopp; Bergmann, Carlos Pérez

2018-02-01

Nanoparticles represent a promising platform for diagnostics and therapy of human diseases. For biomedical applications, these nanoparticles are usually coated with photosensitizers regularly activated in a spectral window of 530-700 nm. The emissions at 530 nm (green) and 660 nm (red) are of particular interest for imaging and photodynamic therapy, respectively. This work presents the Mg2SiO4:Er3+ system, produced by reverse strike co-precipitation, with up to 10% dopant and no secondary phase formation. These nanoparticles when excited at 985 nm show upconversion emission with peaks around 530 and 660 nm, although excitation at 808 nm leads to only a single emission peak at around 530 nm. The direct upconversion of this biomaterial without a co-dopant, and its tunability by the excitation source, renders Mg2SiO4:Er3+ nanoparticles a promising system for biomedical applications.

Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

NASA Astrophysics Data System (ADS)

Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

2018-05-01

A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology.

PubMed

Sharma, Akhil; Verheijen, Marcel A; Wu, Longfei; Karwal, Saurabh; Vandalon, Vincent; Knoops, Harm C M; Sundaram, Ravi S; Hofmann, Jan P; Kessels, W M M Erwin; Bol, Ageeth A

2018-05-10

Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down to a monolayer are observed with excellent wafer scale uniformity. The as-deposited films are found to be polycrystalline in nature showing the signature Raman and photoluminescence signals for the mono-to-few layered regime. Furthermore, a transformation in film morphology from in-plane to out-of-plane orientation of the 2-dimensional layers as a function of growth temperature is observed. An extensive study based on high-resolution transmission electron microscopy is presented to unravel the nucleation mechanism of MoS2 on SiO2/Si substrates at 450 °C. In addition, a model elucidating the film morphology transformation (at 450 °C) is hypothesized. Finally, the out-of-plane oriented films are demonstrated to outperform the in-plane oriented films in the hydrogen evolution reaction for water splitting applications.

Selective Binding, Self-Assembly and Nanopatterning of the Creutz-Taube Ion on Surfaces

PubMed Central

Wang, Yuliang; Lieberman, Marya; Hang, Qingling; Bernstein, Gary

2009-01-01

The surface attachment properties of the Creutz-Taube ion, i.e., [(NH3)5Ru(pyrazine)Ru(NH3)5]5+, on both hydrophilic and hydrophobic types of surfaces were investigated using X-ray photoelectron spectroscopy (XPS). The results indicated that the Creutz-Taube ions only bound to hydrophilic surfaces, such as SiO2 and –OH terminated organic SAMs on gold substrates. No attachment of the ions on hydrophobic surfaces such as –CH3 terminated organic SAMs and poly(methylmethacrylate) (PMMA) thin films covered gold or SiO2 substrates was observed. Further ellipsometric, atomic force microscopy (AFM) and time-dependent XPS studies suggested that the attached cations could form an inorganic analog of the self-assembled monolayer on SiO2 substrate with a “lying-down” orientation. The strong electrostatic interaction between the highly charged cations and the anionic SiO2 surface was believed to account for these observations. Based on its selective binding property, patterning of wide (∼200 nm) and narrow (∼35 nm) lines of the Creutz-Taube ions on SiO2 surface were demonstrated through PMMA electron resist masks written by electron beam lithography (EBL). PMID:19333420

Optical properties of ion-beam-synthesized Au nanoparticles in SiO2 matrix

NASA Astrophysics Data System (ADS)

Hsieh, Chang-Lin; Oyoshi, Keiji; Chao, Der-Sheng; Tsai, Hsu-Sheng; Hong, Wei-Lun; Takeda, Yoshihiko; Liang, Jenq-Horng

2016-05-01

In recent years, gold (Au) nanoparticles have been synthesized via various methods and used in optical and biomedical detection. Au nanoparticles contain some remarkable dimension-dependent optical properties due to surface plasmon resonance (SPR) in Au nanoparticles which causes high absorption in visible light regions. Since SPR in well-crystallized Au nanoparticles can enhance the local electromagnetic field, it is thus expected that greater efficiency in the photoluminescence (PL) originating from oxygen deficiency centers (ODC) can be achieved in Au-implanted SiO2 matrix. In order to demonstrate the enhancement of PL, Au nanoparticles were formed in SiO2 film using ion beam synthesis and their optical and microstructural properties were also investigated in this study. The results revealed that a clear absorption peak at approximately 530 nm was identified in the UV-Vis spectra and was attributed to SPR induced by Au nanoparticles in SiO2. The SPR of Au nanoparticles is also dependent on thermal treatment conditions, such as post-annealing temperature and ambient. The Au nanoparticle-containing SiO2 film also displayed several distinctive peaks at approximately 320, 360, 460, and 600 nm in the PL spectra and were found to be associated with ODC-related defects and non-bridging oxygen hole centers (NBOHC) in SiO2. In addition, the PL peak intensities increased as post-annealing temperature increased, a finding contradictory to the defect recovery but highly consistent with the SPR tendency. A maximum PL emission was achieved when the Au-implanted SiO2 film was annealed at 1100 °C for 1 h under N2. Therefore, the existence of Au nanoparticles in SiO2 film can induce SPR effects as well as enhance PL emission resulting from defect-related luminescence centers.

Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity

NASA Astrophysics Data System (ADS)

Muhtadi, S.; Hwang, S.; Coleman, A.; Asif, F.; Lunev, A.; Chandrashekhar, M. V. S.; Khan, A.

2017-04-01

We report on AlGaN field effect transistors over AlN/sapphire templates with selective area grown n-Al0.5Ga0.5N channel layers for which a field-effect mobility of 55 cm2/V-sec was measured. Using a pulsed plasma enhanced chemical vapor deposition deposited 100 A thick SiO2 layer as the gate-insulator, the gate-leakage currents were reduced by three orders of magnitude. These devices with or without gate insulators are excellent solar-blind ultraviolet detectors, and they can be operated either in the photoconductive or the photo-voltaic modes. In the photo-conductive mode, gain arising from hole-trapping in the depletion region leads to steady-state photoresponsivity as high as 1.2 × 106A/W at 254 nm, which drops sharply below 290 nm. A hole-trapping limited detector response time of 34 ms, fast enough for real-time flame-detection and imaging applications, was estimated.

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

PubMed

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

Structural and optical characterizations of Ca2Al2SiO7:Ce3+, Mn2+ nanoparticles produced via a hybrid route

NASA Astrophysics Data System (ADS)

Teixeira, V. C.; Montes, P. J. R.; Valerio, M. E. G.

2014-07-01

Pure, Ce3+ doped and Ce3+ and Mn2+ co-doped Ca2Al2SiO7 ceramic powders were prepared by two different methodologies which are the proteic sol-gel process and a new hybrid route combining the proteic sol-gel with solid state reaction processes. The second one is an eco-friendly method because it uses natural raw materials in replacement of the metal alkoxides used in the traditional sol-gel routes. X-ray diffraction showed that Ca2Al2SiO7 crystalline phase was obtained for both preparations. Differential thermal analysis indicated that the exothermic event around 850 °C, for sample produced by proteic sol-gel method, and around 927 °C, for ceramics prepared by hybrid synthesis, can be associated to crystallization of Ca2Al2SiO7. Transmission electron microscope indicates that regular and spherical nanoparticles were obtained with average sizes of about 12 nm. The Scherrer's method was used to determine the average crystallite sizes and it was shown that nanometric crystallites were obtained of about 74 nm for samples produced via hybrid route. For all the single phase samples, the crystallite sizes are about the same and that agrees with TEM results. Diffuse optical reflectance measurements were used to estimate the Ca2Al2SiO7 optical band gap and the obtained value is about 6 eV, photoluminescence (PL) spectra presented typical emissions of Ce3+ and Mn2+ ions. Upon excitation at 352 nm the emission spectra showed a broad band centered at 415 nm due to the Ce3+ 4f1 → 5d1 typical transition. This emission is resonant with Mn2+ excitation and it transfers energy to Mn ions generating a second broad emission band centered at 620 nm due to the Mn2+. The PL results were used to obtain, as a fist approach, the Ce3+ energy levels diagram and, using the Tanabe-Sugano diagrams, the transitions due to the Mn2+ were calculated. X-ray excited optical luminescence measurements showed the same emission spectra as the PL emission spectra. Luminescence lifetime decay constants were measured for Ce and Mn co-doped and for Ce doped samples and the results indicate Ca2Al2SiO7:Ce3+, Mn2+ showed quite fast responses with main time constants below 30 ns.

Shock-tube studies of silicon-compound vapors

NASA Technical Reports Server (NTRS)

Park, C.; Fujiwara, T.

1977-01-01

Test gas mixtures containing SiO, SiO2, Si2, and SiH were produced in a shock tube by processing shock waves through a mixture of SiCl4 + N2O + Ar, SiH4 + Ar, or SiH4 + O2 + Ar. Absorption spectra of the test gases were studied photographically in the reflected shock region using a xenon flash lamp as the light source in the range of wavelengths between 250 and 600 nm. SiO was found to be a dominant species in the vapors produced by the SiCl4 + N2O and SiH4 + O2 mixtures. Spontaneous combustion was observed in the SiH4 + O2 + Ar mixture prior to the shock arrival, and the resulting solid SiO2 particles evaporated behind the shock wave. Spectral absorption characteristics of SiO, SiO2, Si2, and SiH were determined by studying the test gases.

CW and passively Q-switched laser performance of Nd:Lu2SiO5 crystal

NASA Astrophysics Data System (ADS)

Xu, Xiaodong; Di, Juqing; Zhang, Jian; Tang, Dingyuan; Xu, Jun

2016-01-01

We demonstrated an efficient and controllable dual-wavelength continuous-wave (CW) laser of Nd:Lu2SiO5 (Nd:LSO) crystal. The maximum output power was 3.02 W at wavelength of 1075 nm and 1079 nm, and with increasing of absorbed pump power, the ratio of 1079 nm laser rose. The slope efficiency of 65.6% and optical-to-optical conversion efficiency of 63.3% were obtained. The passively Q-switched laser properties of Nd:LSO were investigated for the first time. The shortest pulse, maximum pulse energy and peak power were 11.58 ns, 29.05 μJ and 2.34 kW, respectively.

A novel fabrication of a high performance SiO(2)-graphene oxide (GO) nanohybrids: Characterization of thermal properties of epoxy nanocomposites filled with SiO(2)-GO nanohybrids.

PubMed

Haeri, S Z; Ramezanzadeh, B; Asghari, M

2017-05-01

In this study it has been aimed to enhance the thermal resistance of epoxy coating through incorporation of SiO 2 -GO nanohybrids. SiO 2 -GO nanohybrids were synthesized through one-step sol-gel route using a mixture of Tetraethylorthosilane (TEOS) and 3-Aminopropyl triethoxysilane (APTES) silanes. The SiO 2 -GO nanohybrids were prepared at various hydrolysis times of 24, 48 and 72h. Then 0.2wt.% of GO and SiO 2 -GO nanohybrids were separately incorporated into the epoxy coating. Results revealed that amino functionalized SiO 2 nanoparticles with particle size around 20-30nm successfully synthesized on the basal plane of GO. Results showed significant improvement of dispersion and interfacial interactions between nanohybrids and epoxy composite arising from covalent bonding between the SiO 2 -GO and the epoxy matrix. It was found that the thermal resistance of SiO 2 -GO nanohybrids and SiO 2 -GO/Epoxy nanocomposite was noticeably higher than GO and epoxy matrix, respectively. Copyright © 2017 Elsevier Inc. All rights reserved.

Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

NASA Astrophysics Data System (ADS)

Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

2017-11-01

Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Grunthaner, F. J.

1980-01-01

A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

Polarization-independent broadband dielectric bilayer gratings for spectral beam combining system

NASA Astrophysics Data System (ADS)

Li, Linxin; Liu, Quan; Chen, Junming; Wang, Leilei; Jin, Yunxia; Yang, Yifeng; Shao, Jianda

2017-02-01

We report on a polarization-independent all-dielectric trapezoidal bilayer grating with broadband and high diffraction efficiency. The bilayer trapezoidal grating ridge on a reflector consists of an HfO2 layer and a SiO2 layer. The theoretical -1st order efficiencies of the grating are more than 95% with wavelength range from 1010 nm to 1080 nm for both TE and TM polarizations. The fabrication tolerances depending on the HfO2 and SiO2 layer grating ridge depths are enough to obtain the designed grating using current craft. The fabricated grating with exceeding 94% efficiency from 1000 nm to 1085 nm measured by a non-polarization laser has been fabricated and applied in a spectral beam combining external cavity to combine eight beams into one beam output with 10.77 kW.

Oxygen partial pressure influence on the character of InGaZnO thin films grown by PLD

NASA Astrophysics Data System (ADS)

Lu, Yi; Wang, Li

2012-11-01

The amorphous oxide semiconductors (AOSs) are promising for emerging large-area optoelectronic applications because of capability of large-area, uniform deposition at low temperatures such as room temperature (RT). Indium-gallium-zinc oxide (InGaZnO) thin film is a promising amorphous semiconductors material in thin film transistors (TFT) for its excellent electrical properties. In our work, the InGaZnO thin films are fabricated on the SiO2 glass using pulsed laser deposition (PLD) in the oxygen partial pressure altered from 1 to 10 Pa at RT. The targets were prepared by mixing Ga2O3, In2O3, and ZnO powder at a mol ratio of 1: 7: 2 before the solid-state reactions in a tube furnace at the atmospheric pressure. The targets were irradiated by an Nd:YAG laser(355nm). Finally, we have three films of 270nm, 230nm, 190nm thick for 1Pa, 5Pa, 10Pa oxygen partial pressure. The product thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall-effect investigation. The comparative study demonstrated the character changes of the structure and electronic transport properties, which is probably occurred as a fact of the different oxygen partial pressure used in the PLD.

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Xufang; Okamoto, Dai; Hatakeyama, Tetsuo; Sometani, Mitsuru; Harada, Shinsuke; Iwamuro, Noriyuki; Yano, Hiroshi

2018-06-01

The impact of oxide thickness on the density distribution of near-interface traps (NITs) in SiO2/4H-SiC structure was investigated. We used the distributed circuit model that had successfully explained the frequency-dependent characteristics of both capacitance and conductance under strong accumulation conditions for SiO2/4H-SiC MOS capacitors with thick oxides by assuming an exponentially decaying distribution of NITs. In this work, it was found that the exponentially decaying distribution is the most plausible approximation of the true NIT distribution because it successfully explained the frequency dependences of capacitance and conductance under strong accumulation conditions for various oxide thicknesses. The thickness dependence of the NIT density distribution was also characterized. It was found that the NIT density increases with increasing oxide thickness, and a possible physical reason was discussed.

Nanocomposite Phosphor Consisting of CaI2:Eu2+ Single Nanocrystals Embedded in Crystalline SiO2.

PubMed

Daicho, Hisayoshi; Iwasaki, Takeshi; Shinomiya, Yu; Nakano, Akitoshi; Sawa, Hiroshi; Yamada, Wataru; Matsuishi, Satoru; Hosono, Hideo

2017-11-29

High luminescence efficiency is obtained in halide- and chalcogenide-based phosphors, but they are impractical because of their poor chemical durability. Here we report a halide-based nanocomposite phosphor with excellent luminescence efficiency and sufficient durability for practical use. Our approach was to disperse luminescent single nanocrystals of CaI 2 :Eu 2+ in a chemically stable, translucent crystalline SiO 2 matrix. Using this approach, we successfully prepared a nanocomposite phosphor by means of self-organization through a simple solid-state reaction. Single nanocrystals of 6H polytype (thr notation) CaI 2 :Eu 2+ with diameters of about 50 nm could be generated not only in a SiO 2 amorphous powder but also in a SiO 2 glass plate. The nanocomposite phosphor formed upon solidification of molten CaI 2 left behind in the crystalline SiO 2 that formed from the amorphous SiO 2 under the influence of a CaI 2 flux effect. The resulting nanocomposite phosphor emitted brilliant blue luminescence with an internal quantum efficiency up to 98% upon 407 nm violet excitation. We used cathodoluminescence microscopy, scanning transmission electron microscopy, and Rietveld refinement of the X-ray diffraction patterns to confirm that the blue luminescence was generated only by the CaI 2 :Eu 2+ single nanocrystals. The phosphor was chemically durable because the luminescence sites were embedded in the crystalline SiO 2 matrix. The phosphor is suitable for use in near-ultraviolet light-emitting diodes. The concept for this nanocomposite phosphor can be expected to be effective for improvements in the practicality of poorly durable materials such as halides and chalcogenides.

A novel X-ray photoelectron spectroscopy study of the Al/SiO2 interface

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Vasquez, R. P.; Grunthaner, F. J.; Zamani, N.; Maserjian, J.

1985-01-01

The nondestructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films is reported. Both X-ray phototelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing at 450 C induces reduction of the SiO2 by the aluminum, at a rate consistent with the bulk reaction rate. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and related interfaces.

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

NASA Astrophysics Data System (ADS)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

Space Weathering of Silicates Simulated by Successive Laser Irradiation: In Situ Reflectance Measurements of Fo90, Fo99+, and Sio2

NASA Technical Reports Server (NTRS)

Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

2016-01-01

Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of nanophase metallic Fe (npFe0) grains, 2050 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laserpulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

MEMS Terahertz Focal Plane Array With Optical Readout

DTIC Science & Technology

2016-06-01

heat sink via a thermal insulator (pure SiO2 ) and two bi-material legs formed by Al and SiO2 as shown in Figure 12. 13 Figure 12. THz...The primary doublet lens is made of two different pieces of glass (E- BAF11 and N-SF11) which are cemented together. The respective indices of...BAF11 glass 1.6725 n2 (N-SF11) Index of refraction of N-SF11 glass 1.7975 t1 (E-BAF11) Thickness of E-BAF11 glass 20 mm t2 (N-SF11) Thickness of N

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Substrate Oxide Layer Thickness Optimization for a Dual-Width Plasmonic Grating for Surface-Enhanced Raman Spectroscopy (SERS) Biosensor Applications

PubMed Central

Bauman, Stephen J.; Brawley, Zachary T.; Darweesh, Ahmad A.; Herzog, Joseph B.

2017-01-01

This work investigates a new design for a plasmonic SERS biosensor via computational electromagnetic models. It utilizes a dual-width plasmonic grating design, which has two different metallic widths per grating period. These types of plasmonic gratings have shown larger optical enhancement than standard single-width gratings. The new structures have additional increased enhancement when the spacing between the metal decreases to sub-10 nm dimensions. This work integrates an oxide layer to improve the enhancement even further by carefully studying the effects of the substrate oxide thickness on the enhancement and reports ideal substrate parameters. The combined effects of varying the substrate and the grating geometry are studied to fully optimize the device’s enhancement for SERS biosensing and other plasmonic applications. The work reports the ideal widths and substrate thickness for both a standard and a dual-width plasmonic grating SERS biosensor. The ideal geometry, comprising a dual-width grating structure atop an optimal SiO2 layer thickness, improves the enhancement by 800%, as compared to non-optimized structures with a single-width grating and a non-optimal oxide thickness. PMID:28665308

Reflective coating for near-infrared immersion gratings

NASA Astrophysics Data System (ADS)

Kuzmenko, Paul J.; Ikeda, Yuji; Kobayashi, Naoto; Mirkarimi, Paul B.; Alameda, Jennifer B.

2012-09-01

Achieving high reflectivity from an immersed grating facet can be challenging in the near infrared. The reflectivity of metallic coatings in common use, such as Al and Cr/Au, decrease with decreasing wavelength in the near IR. A layer of copper on ZnSe or ZnS should have a high, immersed reflectivity based on tabulated values of refractive index, but in fact performs poorly. We attribute this to a chemical reaction between the copper and the selenium or sulfur. A non-reactive intermediate layer can prevent this problem. Since reflectivity at an interface increases with increasing difference in refractive index, it is beneficial to choose an intermediate layer of low index. A further improvement is gained by adjusting the layer thickness so that reflections from the two interfaces of the intermediate layer add constructively. We sputtered 130 nm of SiO2 onto ZnSe and ZnS substrates followed by 200 nm of Cu. The copper was then coated with 5 nm of SiC as a protective capping layer. Immersed reflectivity measured shortly after coating exceeded 95% between 1500 and 1100 nm and exceeded 90% down to 850 nm. A repeat measurement after long term exposure to high humidity conditions showed no changes.

Advanced Simulation Technology to Design Etching Process on CMOS Devices

NASA Astrophysics Data System (ADS)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

Surface molecular imprinting onto fluorescein-coated magnetic nanoparticlesvia reversible addition fragmentation chain transfer polymerization: A facile three-in-one system for recognition and separation of endocrine disrupting chemicals

NASA Astrophysics Data System (ADS)

Li, Ying; Dong, Cunku; Chu, Jia; Qi, Jingyao; Li, Xin

2011-01-01

In this study, we present a general protocol for the making of surface-imprinted magnetic fluorescence beads viareversible addition-fragmentation chain transfer polymerization. The resulting composites were characterized by X-ray diffraction analysis, transmission electron microscopy, scanning electron microscopy, fluorescence spectroscopy, Fourier transform infrared spectroscopy, and energy dispersive spectroscopy. The as-synthesized beads exhibited homogeneous polymer films (thickness of about 5.7 nm), spherical shape, high fluorescence intensity and magnetic property (Magnetization (Ms) = 3.67 emu g-1). The hybrids bind the original template 17β-estradiol with an appreciable selectivity over structurally related compounds. In addition, the resulting hybrids performed without obvious deterioration after five repeated cycles. This study therefore demonstrates the potential of molecularly imprinted polymers for the recognition and separation of endocrine disrupting chemicals.In this study, we present a general protocol for the making of surface-imprinted magnetic fluorescence beads viareversible addition-fragmentation chain transfer polymerization. The resulting composites were characterized by X-ray diffraction analysis, transmission electron microscopy, scanning electron microscopy, fluorescence spectroscopy, Fourier transform infrared spectroscopy, and energy dispersive spectroscopy. The as-synthesized beads exhibited homogeneous polymer films (thickness of about 5.7 nm), spherical shape, high fluorescence intensity and magnetic property (Magnetization (Ms) = 3.67 emu g-1). The hybrids bind the original template 17β-estradiol with an appreciable selectivity over structurally related compounds. In addition, the resulting hybrids performed without obvious deterioration after five repeated cycles. This study therefore demonstrates the potential of molecularly imprinted polymers for the recognition and separation of endocrine disrupting chemicals. Electronic supplementary information (ESI) available: Supplementary figure S1. The hysteresis loop of Fe3O4 (a), Fe3O4@SiO2 (b), and Fe3O4@SiO2-Dye-SiO2 (c). See DOI: 10.1039/c0nr00614a

Highly luminescent silica-coated CdS/CdSe/CdS nanoparticles with strong chemical robustness and excellent thermal stability

NASA Astrophysics Data System (ADS)

Wang, Nianfang; Koh, Sungjun; Jeong, Byeong Guk; Lee, Dongkyu; Kim, Whi Dong; Park, Kyoungwon; Nam, Min Ki; Lee, Kangha; Kim, Yewon; Lee, Baek-Hee; Lee, Kangtaek; Bae, Wan Ki; Lee, Doh C.

2017-05-01

We present facile synthesis of bright CdS/CdSe/CdS@SiO2 nanoparticles with 72% of quantum yields (QYs) retaining ca 80% of the original QYs. The main innovative point is the utilization of the highly luminescent CdS/CdSe/CdS seed/spherical quantum well/shell (SQW) as silica coating seeds. The significance of inorganic semiconductor shell passivation and structure design of quantum dots (QDs) for obtaining bright QD@SiO2 is demonstrated by applying silica encapsulation via reverse microemulsion method to three kinds of QDs with different structure: CdSe core and 2 nm CdS shell (CdSe/CdS-thin); CdSe core and 6 nm CdS shell (CdSe/CdS-thick); and CdS core, CdSe intermediate shell and 5 nm CdS outer shell (CdS/CdSe/CdS-SQW). Silica encapsulation inevitably results in lower photoluminescence quantum yield (PL QY) than pristine QDs due to formation of surface defects. However, the retaining ratio of pristine QY is different in the three silica coated samples; for example, CdSe/CdS-thin/SiO2 shows the lowest retaining ratio (36%) while the retaining ratio of pristine PL QY in CdSe/CdS-thick/SiO2 and SQW/SiO2 is over 80% and SQW/SiO2 shows the highest resulting PL QY. Thick outermost CdS shell isolates the excitons from the defects at surface, making PL QY relatively insensitive to silica encapsulation. The bright SiO2-coated SQW sample shows robustness against harsh conditions, such as acid etching and thermal annealing. The high luminescence and long-term stability highlights the potential of using the SQW/SiO2 nanoparticles in bio-labeling or display applications.

Effect of Size-Dependent Thermal Instability on Synthesis of Zn2 SiO4-SiOx Core–Shell Nanotube Arrays and Their Cathodoluminescence Properties

PubMed Central

2010-01-01

Vertically aligned Zn2SiO4-SiOx(x < 2) core–shell nanotube arrays consisting of Zn2SiO4-nanoparticle chains encapsulated into SiOx nanotubes and SiOx-coated Zn2SiO4 coaxial nanotubes were synthesized via one-step thermal annealing process using ZnO nanowire (ZNW) arrays as templates. The appearance of different nanotube morphologies was due to size-dependent thermal instability and specific melting of ZNWs. With an increase in ZNW diameter, the formation mechanism changed from decomposition of “etching” to Rayleigh instability and then to Kirkendall effect, consequently resulting in polycrystalline Zn2SiO4-SiOx coaxial nanotubes, single-crystalline Zn2SiO4-nanoparticle-chain-embedded SiOx nanotubes, and single-crystalline Zn2SiO4-SiOx coaxial nanotubes. The difference in spatially resolved optical properties related to a particular morphology was efficiently documented by means of cathodoluminescence (CL) spectroscopy using a middle-ultraviolet emission at 310 nm from the Zn2SiO4 phase. PMID:20672064

Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams

NASA Astrophysics Data System (ADS)

Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Kawano, T.; Ohji, Y.

1994-04-01

The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO2 (166 nm)/Si specimens fabricated by thermal oxidation. From the measurements, it was found that about 90% of positrons implanted into the SiO2 film annihilate from positronium (Ps) states. This fact was due to the trapping of positrons by open-space defects and a resultant enhanced formation of Ps in such regions. For the SiO2 film grown at 650 °C, the lifetime of ortho-Ps was found to be shorter than that in the film grown at 1000 °C. This result suggests that the volume of open-space defects in the SiO2 film decreased with decreasing the growth rate of the SiO2 film.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

Broad bandwidth coatings allow angle of incidence flexibility and accommodate spectral shifts due to aging and water absorption. Higher refractive index materials in optical coatings, such as TiO 2, Nb 2O 5, and Ta 2O 5, can be used to achieve broader bandwidths compared to coatings that contain HfO 2 high index layers. We have identified the deposition settings that lead to the highest index, lowest absorption layers of TiO 2, Nb 2O 5, and Ta 2O 5, via e-beam evaporation using ion-assisted deposition. We paired these high index materials with SiO 2 as the low index material to createmore » broad bandwidth high reflection coatings centered at 1054 nm for 45 deg angle of incidence and P polarization. Furthermore, high reflection bandwidths as large as 231 nm were realized. Laser damage tests of these coatings using the ISO 11254 and NIF-MEL protocols are presented, which revealed that the Ta 2O 5/SiO 2 coating exhibits the highest resistance to laser damage, at the expense of lower bandwidth compared to the TiO 2/SiO 2 and Nb 2O 5/SiO 2 coatings.« less

Highly transparent and efficient counter electrode using SiO2/PEDOT-PSS composite for bifacial dye-sensitized solar cells.

PubMed

Song, Dandan; Li, Meicheng; Li, Yingfeng; Zhao, Xing; Jiang, Bing; Jiang, Yongjian

2014-05-28

A highly transparent and efficient counter electrode was facilely fabricated using SiO2/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) inorganic/organic composite and used in bifacial dye-sensitized solar cells (DSCs). The optical properties of SiO2/PEDOT-PSS electrode can be tailored by the blending amount of SiO2 and film thickness, and the incorporation of SiO2 in PEDOT-PSS provides better transmission in the long wavelength range. Meanwhile, the SiO2/PEDOT-PSS counter electrode shows a better electrochemical catalytic activity than PEDOT-PSS electrode for triiodide reduction, and the role of SiO2 in the catalytic process is investigated. The bifacial DSC with SiO2/PEDOT-PSS counter electrode achieves a high power conversion efficiency (PCE) of 4.61% under rear-side irradiation, which is about 83% of that obtained under front-side irradiation. Furthermore, the PCE of bifacial DSC can be significantly increased by adding a reflector to achieve bifacial irradiation, which is 39% higher than that under conventional front-side irradiation.

Positron annihilation on the surfaces of SiO 2 films thermally grown on single crystal of Cz-Si

NASA Astrophysics Data System (ADS)

Deng, Wen; Yue, Li; Zhang, Wei; Cheng, Xu-xin; Zhu, Yan-yan; Huang, Yu-yang

2009-09-01

Two-detector coincidence system and mono-energetic slow positron beam has been applied to measure the Doppler broadening spectra for single crystals of SiO2, SiO2 films with different thickness thermally grown on single crystal of Cz-Si, and single crystal of Si without oxide film. Oxygen is recognized as a peak at about 11.85 × 10-3m0c on the ratio curves. The S parameters decrease with the increase of positron implantation energy for the single crystal of SiO2 and Si without oxide film. However, for the thermally grown SiO2-Si sample, the S parameters in near surface of the sample increase with positron implantation energy. It is due to the formation of silicon oxide at the surface, which lead to lower S value. S and W parameters vary with positron implantation depth indicate that the SiO2-Si system consist of a surface layer, a SiO2 layer, a SiO2-Si interface layer and a semi-infinite Si substrate.

Preparation of SiO2@Ag Composite Nanoparticles and Their Antimicrobial Activity.

PubMed

Qin, Rui; Li, Guian; Pan, Liping; Han, Qingyan; Sun, Yan; He, Qiao

2017-04-01

At normal atmospheric temperature, the modified sol–gel method was employed to synthesize SiO2 nanospheres (SiO2 NSs) whose average size was about 352 nm. Silver nanoparticles (Ag NPs) were uniformly distributed on the surface of SiO2 nanospheres (SiO2 NSs) by applying chemical reduction method at 95 °C and the size of silver nanoparticles (Ag NPs) could be controlled by simply tuning the reaction time and the concentration of sodium citrate. Besides, the size, morphology, structure and optical absorption properties of SiO2@Ag composite nanoparticles were measured and characterized by laser particle size analyzer (LPSA), transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD) and ultraviolet visible absorption spectrometer (UV-Vis), respectively. Furthermore, antimicrobial effect experiments that against gram-negative bacteria (E. coli) and gram-positive bacteria (S. aureus) were carried out to characterize the antibacterial activity of synthesized SiO2@Ag composite nanoparticles. The results show that the prepared SiO2@Ag composite nanoparticles have strong antimicrobial activity, which is associated with the size of silver nanoparticles.

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

NASA Astrophysics Data System (ADS)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films.

PubMed

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-29

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO 2 ultra-thin films. The SiO 2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO 2 ∣PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO 2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO 2 interface.

Twin-induced phase transition from β-Ga2O3 to α-Ga2O3 in Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Choi, Byeongdae; Allabergenov, Bunyod; Lyu, Hong-Kun; Lee, Seong Eui

2018-06-01

We deposited a 300-nm-thick Ga2O3 thin film on an amorphous SiO2/Si substrate via pulsed laser deposition. X-ray diffraction patterns revealed the formation of β-Ga2O3 phase at a substrate temperature of 700 °C. X-ray photoelectron spectra indicated that the degree of oxidation increased after annealing at 700 °C. Further annealings at higher temperatures led to a transition of the β-Ga2O3 phase to the α-Ga2O3 phase; this transition was caused by the twin structure formed during the crystallinity improvement process. In addition, we discuss the mechanism of the transition from the β phase to the α phase in the β-Ga2O3 thin films.

In situ measurement method for film thickness using transparency resin sheet with low refractive index under wet condition on chemical mechanical polishing

NASA Astrophysics Data System (ADS)

Oniki, Takahiro; Khajornrungruang, Panart; Suzuki, Keisuke

2017-07-01

We suggest that a transparency resin sheet with low refractive index can be applied to the measurement of a silicon dioxide (SiO2) film on a silicon wafer under wet condition for a film thickness measurement system on chemical mechanical polishing (CMP). By adjusting the refractive indices of the resin sheet and water, stable measurements of the SiO2 film can be expected, irrespective of slurry film thickness fluctuation because it has robustness against the slurry film. This result indicates that the transparency resin sheet with low refractive index is a useful for monitoring system of CMP.

Structural and optical properties of SiC-SiO2 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Bozetine, I.; Keffous, A.; Kaci, S.; Menari, H.; Manseri, A.

2018-03-01

This study deals with the deposition of thin films of a SiC-SiO2nanocomposite deposited on silicon substrates. The deposition is carried out by a co-sputtering RF magnetron 13.56 MHz, using two targets a polycristallin 6H-SiC and sprigs of SiO2. In order to study the influence of the deposition time on the morphology, the structural and optical properties of the thin films produced, two series of samples were prepared, namely a series A with a 30 min deposition time and a series B of one hour duration. The samples were investigated using different characterization techniques such as Scanning Electron Microscope (SEM), X-ray Diffraction (DRX), Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS) and photoluminescence. The results obtained, reveal an optical gap varies between 1.4 and 2.4 eV depending on the thickness of the film; thus depending on the deposition time. The SIMS profile recorded the presence of oxygen (16O) on the surface, which the signal beneath the silicon signal (28Si) and carbon (12C) signals, which confirms that the oxide (SiO2) is the first material deposited at the interface film - substrate with an a-OSiC structure. The photoluminescence (PL) measurement exhibits two peaks, centred at 390 nm due to the oxide and at 416 nm due probably to the nanocrystals of SiC crystals, note that when the deposition time increases, the intensity of the PL drops drastically, result in agreement with dense and smooth film.

Interpretation of TOF SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation

NASA Astrophysics Data System (ADS)

Ignatova, V. A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R.

2005-06-01

The TRIDYN collisional computer simulation has been modified to account for emission of ionic species and molecules during sputter depth profiling, by introducing a power law dependence of the ion yield as a function of the oxygen surface concentration and by modelling the sputtering of monoxide molecules. The results are compared to experimental data obtained with dual beam TOF SIMS depth profiling of ZrO2/SiO2/Si high-k dielectric stacks with thicknesses of the SiO2 interlayer of 0.5, 1, and 1.5 nm. Reasonable agreement between the experiment and the computer simulation is obtained for most of the experimental features, demonstrating the effects of ion-induced atomic relocation, i.e., atomic mixing and recoil implantation, and preferential sputtering. The depth scale of the obtained profiles is significantly distorted by recoil implantation and the depth-dependent ionization factor. A pronounced double-peak structure in the experimental profiles related to Zr is not explained by the computer simulation, and is attributed to ion-induced bond breaking and diffusion, followed by a decoration of the interfaces by either mobile Zr or O.

Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

PubMed

Tseng, Kuang-Hung; Chen, Kuan-Lung

2012-08-01

This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.

Functionalized Nano-adsorbent for Affinity Separation of Proteins

NASA Astrophysics Data System (ADS)

Zou, Xueyan; Yang, Fengbo; Sun, Xin; Qin, Mingming; Zhao, Yanbao; Zhang, Zhijun

2018-05-01

Thiol-functionalized silica nanospheres (SiO2-SH NSs) with an average diameter of 460 nm were synthesized through a hydrothermal route. Subsequently, the prepared SiO2-SH NSs were modified by SnO2 quantum dots to afford SnO2/SiO2 composite NSs possessing obvious fluorescence, which could be used to trace the target protein. The SnO2/SiO2 NSs were further modified by reduced glutathione (GSH) to obtain SnO2/SiO2-GSH NSs, which can specifically separate glutathione S-transferase-tagged (GST-tagged) protein. Moreover, the peroxidase activity of glutathione peroxidase 3 (GPX3) separated from SnO2/SiO2-GSH NSs in vitro was evaluated. Results show that the prepared SnO2/SiO2-GSH NSs exhibit negligible nonspecific adsorption, high concentration of protein binding (7.4 mg/g), and good reused properties. In the meantime, the GST-tagged GPX3 separated by these NSs can retain its redox state and peroxidase activity. Therefore, the prepared SnO2/SiO2-GSH NSs might find promising application in the rapid separation and purification of GST-tagged proteins.

Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces.

PubMed

Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A

2017-05-11

Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO x (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

Improved opto-electronic properties of silicon heterojunction solar cells with SiO x /Tungsten-doped indium oxide double anti-reflective coatings

NASA Astrophysics Data System (ADS)

Yu, Jian; Zhou, Jie; Bian, Jiantao; Zhang, Liping; Liu, Yucheng; Shi, Jianhua; Meng, Fanying; Liu, Jinning; Liu, Zhengxin

2017-08-01

Amorphous SiO x was prepared by plasma enhanced chemical vapor deposition (PECVD) to form SiO x /tungsten-doped indium oxide (IWO) double anti-reflective coatings for silicon heterojunction (SHJ) solar cell. The sheet resistance of SiO x /IWO stacks decreases due to plasma treatment during deposition process, which means thinner IWO film would be deposited for better optical response. However, the comparisons of three anti-reflective coating (ARC) structures reveal that SiO x film limits carier transport and the path of IWO-SiO x -Ag structure is non-conductive. The decrease of sheet resistance is defined as pseudo conductivity. IWO film capping with SiO x allows observably reduced reflectance and better response in 300-400 and 600-1200 nm wavelength ranges. Compared with IWO single ARC, the average reflection is reduced by 1.65% with 70 nm SiO x /80 nm IWO double anti-reflective coatings (DARCs) in 500-1200 nm wavelength range, leading to growing external quantum efficiency response, short circuit current density (J sc), and efficiency. After well optimization of SiO x /IWO stacks, an impressive efficiency of 23.08% is obtained with high J sc and without compromising open circuit voltage (V oc) and fill factor. SiO x /IWO DARCs provide better anti-reflective properties over a broad range of wavelength, showing promising application for SHJ solar cells.

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

NASA Astrophysics Data System (ADS)

Falub, Claudiu V.; Rohrmann, Hartmut; Bless, Martin; Meduňa, Mojmír; Marioni, Miguel; Schneider, Daniel; Richter, Jan H.; Padrun, Marco

2017-05-01

Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8" Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100) nm thick magnetic layers and (2-20) nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ˜(7-120) Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency), while the coercivity was kept low, ˜(0.05-0.9) Oe. The alignment of the easy axis (EA) on the 8" wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM), X-ray reflectivity (XRR) with reciprocal space mapping (RSM) and magneto-optical Kerr effect (MOKE) measurements.

Preparation of Nano-TiO2-Coated SiO2 Microsphere Composite Material and Evaluation of Its Self-Cleaning Property

PubMed Central

Sun, Sijia; Deng, Tongrong; Ding, Hao; Chen, Ying; Chen, Wanting

2017-01-01

In order to improve the dispersion of nano-TiO2 particles and enhance its self-cleaning properties, including photocatalytic degradation of pollutants and surface hydrophilicity, we prepared nano-TiO2-coated SiO2 microsphere composite self-cleaning materials (SiO2–TiO2) by co-grinding SiO2 microspheres and TiO2 soliquid and calcining the ground product. The structure, morphology, and self-cleaning properties of the SiO2–TiO2 were characterized. The characterization results showed that the degradation efficiency of methyl orange by SiO2–TiO2 was 97%, which was significantly higher than that obtained by pure nano-TiO2. The minimum water contact angle of SiO2–TiO2 was 8°, indicating strong hydrophilicity and the good self-cleaning effect. The as-prepared SiO2–TiO2 was characterized by the nano-TiO2 particles uniformly coated on the SiO2 microspheres and distributed in the gap among the microspheres. The nano-TiO2 particles were in an anatase phase with the particle size of 15–20 nm. The nano-TiO2 particles were combined with SiO2 microspheres via the dehydroxylation of hydroxyl groups on their surfaces. PMID:29099774

A blue optical filter for narrow-band imaging in endoscopic capsules

NASA Astrophysics Data System (ADS)

Silva, M. F.; Ghaderi, M.; Goncalves, L. M.; de Graaf, G.; Wolffenbuttel, R. F.; Correia, J. H.

2014-05-01

This paper presents the design, simulation, fabrication, and characterization of a thin-film Fabry-Perot resonator composed of titanium dioxide (TiO2) and silicon dioxide (SiO2) thin-films. The optical filter is developed to be integrated with a light emitting diode (LED) for enabling narrow-band imaging (NBI) in endoscopy. The NBI is a high resolution imaging technique that uses spectrally centered blue light (415 nm) and green light (540 nm) to illuminate the target tissue. The light at 415 nm enhances the imaging of superficial veins due to their hemoglobin absorption, while the light at 540 nm penetrates deeper into the mucosa, thus enhances the sub-epithelial vessels imaging. Typically the endoscopes and endoscopic capsules use white light for acquiring images of the gastrointestinal (GI) tract. However, implementing the NBI technique in endoscopic capsules enhances their capabilities for the clinical applications. A commercially available blue LED with a maximum peak intensity at 404 nm and Full Width Half Maximum (FWHM) of 20 nm is integrated with a narrow band blue filter as the NBI light source. The thin film simulations show a maximum spectral transmittance of 36 %, that is centered at 415 nm with FWHM of 13 nm for combined the blue LED and a Fabry Perot resonator system. A custom made deposition scheme was developed for the fabrication of the blue optical filter by RF sputtering. RF powered reactive sputtering at 200 W with the gas flows of argon and oxygen that are controlled for a 5:1 ratio gives the optimum optical conditions for TiO2 thin films. For SiO2 thin films, a non-reactive RF sputtering at 150 W with argon gas flow at 15 sccm results in the best optical performance. The TiO2 and SiO2 thin films were fully characterized by an ellipsometer in the wavelength range between 250 nm to 1600 nm. Finally, the optical performance of the blue optical filter is measured and presented.

Fabrication of multilayered Ge nanocrystals embedded in SiO xGeN y films

NASA Astrophysics Data System (ADS)

Gao, Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang, Yidan; Perez-Wurfl, Ivan; Flynn, Chris

2008-09-01

Multilayered Ge nanocrystals embedded in SiO xGeN y films have been fabricated on Si substrate by a (Ge + SiO 2)/SiO xGeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction.

Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

NASA Astrophysics Data System (ADS)

Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

2012-03-01

Film and film/substrate interface characteristics of 30 and 60 nm-thick AlOx films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlOx films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlOx/SiOx/Si interface with positron trapping and annihilation occurring in the Si side of the SiOx/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiOx interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.

PubMed

Poudel, P R; Paramo, J A; Poudel, P P; Diercks, D R; Strzhemechny, Y M; Rout, B; McDaniel, F D

2012-03-01

Amorphous carbon (a-C) nanoclusters were synthesized by the implantation of carbon ions (C-) into thermally grown silicon dioxide film (-500 nm thick) on a Si (100) wafer and processed by high temperature thermal annealing. The carbon ions were implanted with an energy of 70 keV at a fluence of 5 x 10(17) atoms/cm2. The implanted samples were annealed at 1100 degrees C for different time periods in a gas mixture of 96% Ar+4% H2. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and High Resolution Transmission Electron Microscopy (HRTEM) were used to study the structural properties of both the as-implanted and annealed samples. HRTEM reveals the formation of nanostructures in the annealed samples. The Raman spectroscopy also confirms the formation of carbon nano-clusters in the samples annealed for 10 min, 30 min, 60 min and 90 min. No Raman features originating from the carbon-clusters are observed for the sample annealed further to 120 min, indicating a complete loss of implanted carbon from the SiO2 layer. The loss of the implanted carbon in the 120 min annealed sample from the SiO2 layer was also observed in the XPS depth profile measurements. Room temperature photoluminescence (PL) spectroscopy revealed visible emissions from the samples pointing to carbon ion induced defects as the origin of a broad 2.0-2.4 eV band, and the intrinsic defects in SiO2 as the possible origin of the -2.9 eV bands. In low temperature photoluminescence spectra, two sharp and intense photoluminescence lines at -3.31 eV and -3.34 eV appear for the samples annealed for 90 min and 120 min, whereas no such bands are observed in the samples annealed for 10 min, 30 min, and 60 min. The Si nano-clusters forming at the Si-SiO2 interface could be the origin of these intense peaks.

PECVD de composes de silicium sur polymeres: Etude de la premiere phase du depot

NASA Astrophysics Data System (ADS)

Dennler, Gilles

Since their first introduction in the early 90's, transparent barriers against oxygen and/or water vapor permeation through polymers, such as SiO 2, are the object of increasing interest in the food and pharmaceutical packaging industries, and more recently for the encapsulation of organic-based displays. It is now well known that these thin layers possess barrier properties only if they are thicker than a certain critical thickness, dc. For example, dc is around 12 nm in the case of SiO2 on KaptonRTM PI; below this value, the measured "Oxygen Transmission Rate" (OTR, in standard cm3/m2/day/bar) is roughly the same as that of the uncoated polymer. Until now, no detailed research has been carried out to explain this observation, but a hypothesis was proposed in the literature, based on island-like growth structure of the coating for d ≤ dc. According to this hypothesis, the surface energy of the polymeric substrates is so low that the Volmer-Weber (island-coalescence) growth mode occurs. We have aimed to verify this explanation, that is, to study the initial phase of silicon-compound (SiO2 and SiN) growth on four different polymeric substrates, namely polyimide (KaptonRTM PI), polycarbonate (LexanRTM PC), polypropylene (PP), and polyethyleneterephthalate (MylarRTM PET). Three different deposition methods were used, namely reactive evaporation of SiO, radio-frequency (RF) Plasma Enhanced Chemical Vapor Deposition (RF PECVD), and Distributed Electron Cyclotron Resonance (DECR) PECVD. In this latter case, the substrates were placed in three different positions: (i) in the active glow zone, (ii) downstream, and (iii) downstream, but shielded from photon emission (e.g. VUV) from the plasma. Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS), Rutherford Backscattering Spectroscopy (RBS), and Scanning Electron Microscopy (SEM), the latter performed after Reactive Ion Etching (RIE) by oxygen plasma, revealed that growth indeed occurs in a Volmer-Weber mode in the case of evaporated films. The island coalescence was observed to occur at d = 1.2 nm, at which point the sticking coefficient of precursor species changes drastically. Finally, we have investigated the presence of an "interphase" between deposited coatings and the polymeric substrate. (Abstract shortened by UMI.)

Space Weathering of Silicates Simulated by Successive Laser Irradiation: in Situ Reflectance Measurements of Fo90, Fo99+, and SiO2

NASA Technical Reports Server (NTRS)

Loeffler, M. J.; Dukes, C. A.; Christoffersen, R.; Baragiola, R. A.

2016-01-01

Pulsed-laser irradiation causes the visible-near-infrared spectral slope of olivine (Fo90 and Fo99+) and SiO2 to increase (redden), while the olivine samples darken and the SiO2 samples brighten slightly. XPS analysis shows that irradiation of Fo90 produces metallic Fe. Analytical SEM and TEM measurements confirm that reddening in the Fo90 olivine samples correlates with the production of "nanophase" metallic Fe (npFe0) grains, 20-50 nm in size. The reddening observed in the SiO2 sample is consistent with the formation of SiO or other SiOx species that absorb in the visible. The weak spectral brightening induced by laser irradiation of SiO2 is consistent with a change in surface topography of the sample. The darkening observed in the olivine samples is likely caused by the formation of larger npFe0 particles, such as the 100-400 nm diameter npFe0 identified during our TEM analysis of Fo90 samples. The Fo90 reflectance spectra are qualitatively similar to those in previous experiments suggesting that in all cases formation of npFe0 is causing the spectral alteration. Finally, we find that the accumulation of successive laser pulses cause continued sample darkening in the Vis-NIR, which suggests that repeated surface impacts are an efficient way to darken airless body surfaces.

Enhanced luminous transmittance of thermochromic VO2 thin film patterned by SiO2 nanospheres

NASA Astrophysics Data System (ADS)

Zhou, Liwei; Liang, Jiran; Hu, Ming; Li, Peng; Song, Xiaolong; Zhao, Yirui; Qiang, Xiaoyong

2017-05-01

In this study, an ordered SiO2 nanosphere array coated with vanadium dioxide (VO2) has been fabricated to enhance transmittance with the potential application as an energy-efficient coating in the field of smart windows. SiO2 arrays were formed using the methods of self-assembly, and VO2 thin films were prepared by rapid thermal annealing (RTA) of sputtered vanadium films. VO2@SiO2 arrays were characterized by scanning electron microscopy, X-ray diffraction, a four-point probe, and UV-vis-NIR spectrophotometry. Compared with the planar films, the films deposited on 300 nm diameter SiO2 nanospheres can offer approximately 18% enhancement of luminous transmission (Tlum) because the diameter is smaller than the given wavelength and the protuberance of the surface array behaves as a gradation of refractive index producing antireflection. The solar regulation efficiency was not much deteriorated.

Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, James; Kauder, Lonny; Cavanaugh, John

2010-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Effect of Charging Electron Exposure on 1064nm Transmission through Bare Sapphire Optics and SiO2 over HfO2 AR-coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, james; Kauder, Lonny; Cavanaugh, John

2008-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

US Army Research Laboratory Directed Energy Internship Program 2014

DTIC Science & Technology

2015-11-01

7 1400–1800 nm. However, when making EDFs, the solubility of Er in traditional silica ( SiO2 )-based glass is low and the ions that successfully...Thus, either half or all of the energy in a pair of excited ions could be wasted. In traditional SiO2 -based Er-doped glass (Er-SD), Er is co-doped...upconversion, Er-doped SiO2 NPs (Er-NP) are doped into the glass core of a fiber. This process is thought to create a cage of Al and O ions around each Er

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

NASA Astrophysics Data System (ADS)

Coleman, P. G.; Burrows, C. P.; Mahapatra, R.; Wright, N. G.

2007-07-01

Open-volume (vacancy-type) point defects have been observed in ˜80-nm-thick titanium dioxide films grown on silicon dioxide/4H silicon carbide substrates as stacks with high dielectric constant for power device applications, using variable-energy positron annihilation spectroscopy. The concentration of vacancies decreases as the titanium dioxide growth temperature is increased in the range from 700to1000°C, whereas grain boundaries form in the polycrystalline material at the highest growth temperatures. It is proposed that the optimal electrical performance for films grown at 800°C reflects a balance between decreasing vacancy concentration and increasing grain boundary formation. The concentration of vacancies at the silicon dioxide/silicon carbide interface appears to saturate after 2.5h oxidation at 1150°C. A supplementary result suggests that the quality of the 10-μm-thick deposited silicon carbide epilayer is compromised at depths of about 2μm and beyond, possibly by the migration of impurities and/or other defects from the standard-grade highly doped 4H silicon carbide wafer beneath the epilayer during oxidation.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

PubMed

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Laser damage comparisons of broad-bandwidth, high-reflection optical coatings containing TiO 2, Nb 2O 5, or Ta 2O 5 high-index layers

DOE PAGES

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

2016-09-21

Broad bandwidth coatings allow angle of incidence flexibility and accommodate spectral shifts due to aging and water absorption. Higher refractive index materials in optical coatings, such as TiO 2, Nb 2O 5, and Ta 2O 5, can be used to achieve broader bandwidths compared to coatings that contain HfO 2 high index layers. We have identified the deposition settings that lead to the highest index, lowest absorption layers of TiO 2, Nb 2O 5, and Ta 2O 5, via e-beam evaporation using ion-assisted deposition. We paired these high index materials with SiO 2 as the low index material to createmore » broad bandwidth high reflection coatings centered at 1054 nm for 45 deg angle of incidence and P polarization. Furthermore, high reflection bandwidths as large as 231 nm were realized. Laser damage tests of these coatings using the ISO 11254 and NIF-MEL protocols are presented, which revealed that the Ta 2O 5/SiO 2 coating exhibits the highest resistance to laser damage, at the expense of lower bandwidth compared to the TiO 2/SiO 2 and Nb 2O 5/SiO 2 coatings.« less

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

NASA Astrophysics Data System (ADS)

Tiwari, Durgesh Laxman; Sivasankaran, K.

This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation

NASA Astrophysics Data System (ADS)

Zhen, J. S.; Yang, Q.; Yan, Y. H.; Jiang, X. W.; Yan, S. A.; Chen, W.; Guo, X. Q.

2016-03-01

In this paper, the radiation defects induced by the swift heavy ions and the recoil atoms in amorphous SiO2 were studied. The energy of recoil atoms induced by the incident Au ions in SiO2 was calculated by using Monte Carlo method. Results show that the average energies of recoils reach the maximum (200 eV for Si and 130 eV for O, respectively) when the incident energy of Au ion is 100 MeV. Using Tersoff/zbl potential with the newly built parameters, the defects formation processes in SiO2 induced by the recoils were studied by using molecular dynamics method. The displacement threshold energies (Ed) for Si and O atoms are found to be 33.5 and 16.3 eV, respectively. Several types of under- and over-coordinated Si and O defects were analyzed. The results demonstrate that Si3, Si5, and O1 are the mainly defects in SiO2 after radiation. Besides, the size of cylindrical damage region produced by a single recoil atom was calculated. The calculation shows that the depth and the radius are up to 2.0 and 1.4 nm when the energy of recoils is 200 eV. Finally, it is estimated that the Au ion would induce a defected track with a diameter of 4 nm in SiO2.

Measurement of Thicknesses of High-κ Gate-Dielectric Films on Silicon by Angle-Resolved XPS

NASA Astrophysics Data System (ADS)

Powell, Cedric; Smekal, Werner; Werner, Wolfgang

2006-03-01

We report on the use of a new NIST database for the Simulation of Electron Spectra for Surface Analysis (SESSA) in measuring thicknesses of candidate high-κ gate-dielectric materials (HfO2, HfSiO4, ZrO2, and ZrSiO4) on silicon by angle-resolved XPS. For conventional measurements of film thicknesses, effective attenuation lengths (EALs) have been computed for these materials from SESSA as a function of film thickness and photoelectron emission angle (i.e., to simulate the effects of tilting the sample). These EALs are believed to be more accurate than similar EALs obtained from the transport approximation because realistic cross sections are used for both elastic and inelastic scattering in the film and substrate materials. We also present ``calibration curves'' showing calculated ratios of selected photoelectron intensities from thin films of HfO2 on Si with an intermediate SiO2 layer. These ratios provide a simple and convenient means of determining the thicknesses of SiO2 and HfO2 films for particular measurement conditions.

Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential.

PubMed

Kong, Desheng; Dang, Wenhui; Cha, Judy J; Li, Hui; Meister, Stefan; Peng, Hailin; Liu, Zhongfan; Cui, Yi

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Radiation-based near-field thermal rectification with phase transition materials

NASA Astrophysics Data System (ADS)

Yang, Yue; Basu, Soumyadipta; Wang, Liping

2013-10-01

The capability of manipulating heat flow has promising applications in thermal management and thermal circuits. In this Letter, we report strong thermal rectification effect based on the near-field thermal radiation between silicon dioxide (SiO2) and a phase transition material, vanadium dioxide (VO2), separated by nanometer vacuum gaps under the framework of fluctuational electrodynamics. Strong coupling of surface phonon polaritons between SiO2 and insulating VO2 leads to enhanced near-field radiative transfer, which on the other hand is suppressed when VO2 becomes metallic, resulting in thermal rectification. The rectification factor is close to 1 when vacuum gap is at 1 μm and it increases to almost 2 at sub-20-nm gaps when emitter and receiver temperatures are set to 400 and 300 K, respectively. Replacing bulk SiO2 with a thin film of several nanometers, rectification factor of 3 can be achieved when the vacuum gap is around 100 nm.

Long-range pulselength scaling of 351nm laser damage thresholds

NASA Astrophysics Data System (ADS)

Foltyn, S. R.; Jolin, L. J.

1986-12-01

In a series of experiments incorporating 351nm pulselength of 9, 26, 54, and 625ns, it was found that laser damage thresholds increased as (pulselength)/sup x/, and that the exponent averaged 0.36 and ranged, for different samples, from 0.23 to 0.48. Similar results were obtained when only catastrophic damage was considered. Samples included Al2O3/SiO2 in both AR and HR multilayers, HR's of Sc2O3/SiO2 and HfO2/SiO2, and Al-on-pyrex mirror; 9ns thresholds were between 0.2 to 5.6 J/sq cm. When these data were compared with a wide range of other results - for wavelengths from 0.25 to 10.6 microns and pulselengths down to 4ps - a remarkably consistent picture emerged. Damage thresholds, on average, increase approximately as the cube-root of pulselength from picoseconds to nearly a microsecond, and do so regardless of wavelength or material under test.

A new approach of the synthesis of SiO 2 nanowires by using bulk copper foils as catalyst

DOE PAGES

Gomez-Martinez, A.; Márquez, F.; Morant, C.

2016-06-22

In this paper, a novel procedure for the growth of SiO 2 nanowires (SiO 2NWs) directly from polycrystalline copper foils is reported. The single-step synthesis procedure consists of a thermal treatment at 900°C without the need for additional catalysts. As a result, nanowires with an average diameter of 100 nm are synthesized. A systematic study undertaken at different stages of the SiO 2NWs growth confirmed the generation of nucleation centers on the Cu surface, as well as revealed the existence of an intermediate gaseous SiO species at the synthesis temperature. Lastly, on the basis of these evidences, the vapor-liquid-solid (VLS)more » route has been proposed as the mechanism responsible for the growth.« less

Electro-Caloric Properties of BT/PZT Multilayer Thin Films Prepared by Sol-Gel Method.

PubMed

Kwon, Min-Su; Lee, Sung-Gap; Kim, Kyeong-Min

2018-09-01

In this study, Barium Titanate (BT)/Lead Zirconate Titanate (PZT) multilayer thin films were fabricated by the spin-coating method on Pt (200 nm)/Ti (10 nm) SiO2 (100 nm)/P-Si (100) substrates using BaTiO3 and Pb(Zr0.90Ti0.10)O3 metal alkoxide solutions. The coating and heating procedure was repeated several times to form the multilayer thin films. All of BT/PZT multilayer thin films show X-ray diffraction patterns typical to a polycrystalline perovskite structure and a uniform and void free grain microstructure. The thickness of the BT and PZT film by one-cycle of drying/sintering was approximately 50 nm and all of the films consisted of fine grains with a flat surface morphology. The electrocaloric properties of BT/PZT thin films were investigated by indirect estimation. The results showed that the temperature change ΔT can be calculated as a function of temperature using Maxwell's relation; the temperature change reaches a maximum value of ~1.85 °C at 135 °C under an applied electric field of 260 kV/cm.

Metabolomic effects in HepG2 cells exposed to CeO2, SiO2 and CuO nanomaterials.

EPA Science Inventory

To better assess potential hepatotoxicity of nanomaterials, human liver HepG2 cells were exposed for three days to 5 different CeO2 (either 30 or 100 ug/ml), 3 SiO2 based (30 ug/ml) or 1 CuO (3 ug/ml) nanomaterials with dry primary particle sizes ranging from 15 to 213 nm. Metab...

Facile synthesis of microporous SiO2/triangular Ag composite nanostructures for photocatalysis

NASA Astrophysics Data System (ADS)

Sirohi, Sidhharth; Singh, Anandpreet; Dagar, Chakit; Saini, Gajender; Pani, Balaram; Nain, Ratyakshi

2017-11-01

In this article, we present a novel fabrication of microporous SiO2/triangular Ag nanoparticles for dye (methylene blue) adsorption and plasmon-mediated degradation. Microporous SiO2 nanoparticles with pore size <2 nm were synthesized using cetyltrimethylammonium bromide as a structure-directing agent and functionalized with APTMS ((3-aminopropyl) trimethoxysilane) to introduce amine groups. Amine-functionalized microporous silica was used for adsorption of triangular silver (Ag) nanoparticles. The synthesized microporous SiO2 nanostructures were investigated for adsorption of different dyes including methylene blue, congo red, direct green 26 and curcumin crystalline. Amine-functionalized microporous SiO2/triangular Ag nanostructures were used for plasmon-mediated photocatalysis of methylene blue. The experimental results revealed that the large surface area of microporous silica facilitated adsorption of dye. Triangular Ag nanoparticles, due to their better charge carrier generation and enhanced surface plasmon resonance, further enhanced the photocatalysis performance.

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

Improved light extraction efficiency in GaN-based light emitting diode by nano-scale roughening of p-GaN surface.

PubMed

Park, Sang Jae; Sadasivam, Karthikeyan Giri; Chung, Tae Hoon; Hong, Gi Cheol; Kim, Jin Bong; Kim, Sang Mook; Park, Si-Hyun; Jeon, Seong-Ran; Lee, June Key

2008-10-01

Improvement in light extraction efficiency of Ultra Violet-Light Emitting Diode (UV-LED) is achieved by nano-scale roughening of p-type Gallium Nitride (p-GaN) surface. The process of surface roughening is carried out by using self assembled gold (Au) nano-clusters with support of nano-size silicon-oxide (SiO2) pillars on p-GaN surface as a dry etching mask and by p-GaN regrowth in the regions not covered by the mask after dry etching. Au nano-clusters are formed by rapid thermal annealing (RTA) process carried out at 600 degrees C for 1 min using 15 nm thick Au layer on top of SiO2. The p-GaN roughness is controlled by p-GaN regrowth time. Four different time values of 15 sec, 30 sec, 60 sec and 120 sec are considered for p-GaN regrowth. Among the four different p-GaN regrowth time values 30 sec regrown p-GaN sample has the optimum roughness to increase the electroluminescence (EL) intensity to a value approximately 60% higher than the EL intensity of a conventional LED.

Silicon-based horizontal nanoplasmonic slot waveguides for on-chip integration.

PubMed

Zhu, Shiyang; Liow, T Y; Lo, G Q; Kwong, D L

2011-04-25

Horizontal metal/insulator/Si/insulator/metal nanoplasmonic slot waveguide (PWG), which is inserted in a conventional Si wire waveguide, is fabricated using the standard Si-CMOS technology. A thin insulator between the metal and the Si core plays a key role: it not only increases the propagation distance as the theoretical prediction, but also prevents metal diffusion and/or metal-Si reaction. Cu-PWGs with the Si core width of ~134-21 nm and ~12-nm-thick SiO2 on each side exhibit a relatively low propagation loss of ~0.37-0.63 dB/µm around the telecommunication wavelength of 1550 nm, which is ~2.6 times smaller than the Al-counterparts. A simple tapered coupler can provide an effective coupling between the PWG and the conventional Si wire waveguide. The coupling efficiency as high as ~0.1-0.4 dB per facet is measured. The PWG allows a sharp bending. The pure bending loss of a Cu-PWG direct 90° bend is measured to be ~0.6-1.0 dB. These results indicate the potential for seamless integration of various functional nanoplasmonic devices in existing Si electronic photonic integrated circuits (Si-EPICs).

Low-temperature-sensitive relative humidity sensor based on tapered square no-core fiber coated with SiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Miao, Yinping; Ma, Xixi; He, Yong; Zhang, Hongmin; Zhang, Hao; Song, Binbin; Liu, Bo; Yao, Jianquan

2016-05-01

A low-temperature-sensitive relative humidity (RH) sensor based on multimode interference effects has been proposed. The sensor consists of a section of tapered square no-core fiber (TSNCF) coated with SiO2 nanoparticles which is fabricated by splicing the TSNCF with two single-mode fibers (SMFs). The refractive index of SiO2 nanoparticles changes with the variation of environmental humidity levels. Characteristics of the transmission spectral have been investigated under different humidity levels. The wavelength shifts up to 10.2 nm at 1410 nm and 11.5 nm at 1610 nm for a RH range of 43.6-98.6% have been experimentally achieved, and the corresponding sensitivities reach 456.21 pm/%RH and 584.2 pm/%RH for a RH range of 83-96.6%, respectively. The temperature response of the proposed sensor has also been experimentally investigated. Due to the fact that the sensing head is made of a pure silica rod with a low thermal expansion coefficient and the thermo-optic coefficient, the transmission spectrum shows a low temperature sensitivity of about 6 pm/°C for an environmental temperature of 20.9-80 °C, which is a desirable merit to resolve the temperature cross sensitivity. Therefore, the proposed sensor could be applied to breath analysis applications with low temperature fluctuations.

CoO-doped MgO-Al2O3-SiO2-colored transparent glass-ceramics with high crystallinity

NASA Astrophysics Data System (ADS)

Tang, Wufu; Zhang, Qian; Luo, Zhiwei; Yu, Jingbo; Gao, Xianglong; Li, Yunxing; Lu, Anxian

2018-02-01

To obtain CoO-doped MgO-Al2O3-SiO2 (MAS)-colored transparent glass-ceramics with high crystallinity, the glass with the composition 21MgO-21Al2O3-54SiO2-4B2O3-0.2CoO (in mol %) was prepared by conventional melt quenching technique and subsequently thermal treated at several temperatures. The crystallization behavior of the glass, the precipitated crystalline phases and crystallinity were analyzed by X-ray diffraction (XRD). The microstructure of the glass-ceramics was characterized by field emission scanning electron microscopy (FSEM). The transmittance of glass-ceramic was measured by UV spectrophotometer. The results show that a large amount of α-cordierite (indianite) with nano-size was precipitated from the glass matrix after treatment at 1020 °C for 3 h. The crystallinity of the transparent glass-ceramic reached up to 97%. Meanwhile, the transmittance of the glass-ceramic was 74% at 400 nm with a complex absorption band from 450 nm to 700 nm. In addition, this colored transparent glass-ceramic possessed lower density (2.469 g/cm3), lower thermal expansion coefficient (1.822 × 10-6 /℃), higher Vickers hardness (9.1 GPa) and higher bending strength (198 MPa) than parent glass.

Two-dimensional tantalum disulfide: controlling structure and properties via synthesis

NASA Astrophysics Data System (ADS)

Zhao, Rui; Grisafe, Benjamin; Krishna Ghosh, Ram; Holoviak, Stephen; Wang, Baoming; Wang, Ke; Briggs, Natalie; Haque, Aman; Datta, Suman; Robinson, Joshua

2018-04-01

Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase transition induced electronic property modulation at low temperature. However, the appropriate phase must be grown to enable the semiconductor/metal transition that is of interest for next generation electronic applications. In this work, we demonstrate direct and controllable synthesis of ultra-thin 1T-TaS2 and 2H-TaS2 on a variety of substrates (sapphire, SiO2/Si, and graphene) via powder vapor deposition. The synthesis process leads to single crystal domains ranging from 20 to 200 nm thick and 1-10 µm on a side. The TaS2 phase (1T or 2H) is controlled by synthesis temperature, which subsequently is shown to control the electronic properties. Furthermore, this work constitutes the first demonstration of a metal-insulator phase transition in directly synthesized 1T-TaS2 films and domains by electronic means.

Fabrication of Buried Nanochannels From Nanowire Patterns

NASA Technical Reports Server (NTRS)

Choi, Daniel; Yang, Eui-Hyeok

2007-01-01

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

NASA Astrophysics Data System (ADS)

El Mir, L.; Amlouk, A.; Barthou, C.

2006-11-01

This paper deals with the sol gel elaboration and defects photoluminescence (PL) examination of Al2O3 nanocrystallites (size ˜30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO2 host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al2O3/SiO2 (AS) exhibited a strong PL bands at 400 600 and 700 900 nm in 78 300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400 600 and 700 900 nm, respectively.

Synthesis, characterization and properties of Dy3+-activated single host borosilicate phosphors

NASA Astrophysics Data System (ADS)

Yu, Hong; Chen, Shanyong; Chen, Jinlei

2017-12-01

New phosphors Sr3B2SiO8: Dy3+ have been successfully synthesized via solid-state reaction process. Emission/excitation spectra, photoluminescence decay behaviors were investigated in detail. Under the excitation of 351 nm, the emission spectrum consisting of the characteristic transitions of Dy3+ which mainly peaking at 480, 487 nm and 574 nm corresponding to the4F9/2→6H15/2 and4F9/2→6H13/2, respectively, the intensity of the blue emission stronger than the yellow one which indicated that Dy3+ ions take the site without inversion symmetry. The chromaticity coordinates of Sr3-xB2SiO8: x Dy3+ fixed in the white region. The results showed the kind of phosphor may be act potential applications in the fields of UV-excited white LEDs.

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study

NASA Astrophysics Data System (ADS)

Maitra, Kingsuk; Frank, Martin M.; Narayanan, Vijay; Misra, Veena; Cartier, Eduard A.

2007-12-01

We report low temperature (40-300 K) electron mobility measurements on aggressively scaled [equivalent oxide thickness (EOT)=1 nm] n-channel metal-oxide-semiconductor field effect transistors (nMOSFETs) with HfO2 gate dielectrics and metal gate electrodes (TiN). A comparison is made with conventional nMOSFETs containing HfO2 with polycrystalline Si (poly-Si) gate electrodes. No substantial change in the temperature acceleration factor is observed when poly-Si is replaced with a metal gate, showing that soft optical phonons are not significantly screened by metal gates. A qualitative argument based on an analogy between remote phonon scattering and high-resolution electron energy-loss spectroscopy (HREELS) is provided to explain the underlying physics of the observed phenomenon. It is also shown that soft optical phonon scattering is strongly damped by thin SiO2 interface layers, such that room temperature electron mobility values at EOT=1 nm become competitive with values measured in nMOSFETs with SiON gate dielectrics used in current high performance processors.

One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

NASA Astrophysics Data System (ADS)

Barick, B. K.; Yadav, Shivesh; Dhar, S.

2017-11-01

GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature ∼910 °C. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along [ 1 0 1 bar 0 ] direction. It has also been observed that the average diameter of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.

Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture.

PubMed

Fox, Austin J; Drawl, Bill; Fox, Glen R; Gibbons, Brady J; Trolier-McKinstry, Susan

2015-01-01

Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x ]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti 0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.

Characterization of Fe3O4/SiO2/Gd2O(CO3)2 core/shell/shell nanoparticles as T1 and T2 dual mode MRI contrast agent.

PubMed

Yang, Meicheng; Gao, Lipeng; Liu, Kai; Luo, Chunhua; Wang, Yiting; Yu, Lei; Peng, Hui; Zhang, Wen

2015-01-01

Core/shell/shell structured Fe3O4/SiO2/Gd2O(CO3)2 nanoparticles were successfully synthesized. Their properties as a new type of T1-T2 dual model contrast agent for magnetic resonance imaging were investigated. Due to the introduce of a separating SiO2 layer, the magnetic coupling between Gd2O(CO3)2 and Fe3O4 could be modulated by the thickness of SiO2 layer and produce appropriate T1 and T2 signal. Additionally, the existence of Gd(3+) enhances the transverse relaxivity of Fe3O4 possibly because of the magnetic coupling between Gd(3+) and Fe3O4. The Fe3O4/SiO2/Gd2O(CO3)2 nanoparticles exhibit good biocompatibility, showing great potential for biomedical applications. Copyright © 2014 Elsevier B.V. All rights reserved.

Designing hybrid gate dielectric for fully printing high-performance carbon nanotube thin film transistors

NASA Astrophysics Data System (ADS)

Li, Qian; Li, Shilong; Yang, Dehua; Su, Wei; Wang, Yanchun; Zhou, Weiya; Liu, Huaping; Xie, Sishen

2017-10-01

The electrical characteristics of carbon nanotube (CNT) thin-film transistors (TFTs) strongly depend on the properties of the gate dielectric that is in direct contact with the semiconducting CNT channel materials. Here, we systematically investigated the dielectric effects on the electrical characteristics of fully printed semiconducting CNT-TFTs by introducing the organic dielectrics of poly(methyl methacrylate) (PMMA) and octadecyltrichlorosilane (OTS) to modify SiO2 dielectric. The results showed that the organic-modified SiO2 dielectric formed a favorable interface for the efficient charge transport in s-SWCNT-TFTs. Compared to single-layer SiO2 dielectric, the use of organic-inorganic hybrid bilayer dielectrics dramatically improved the performances of SWCNT-TFTs such as mobility, threshold voltage, hysteresis and on/off ratio due to the suppress of charge scattering, gate leakage current and charge trapping. The transport mechanism is related that the dielectric with few charge trapping provided efficient percolation pathways for charge carriers, while reduced the charge scattering. High density of charge traps which could directly act as physical transport barriers and significantly restrict the charge carrier transport and, thus, result in decreased mobile carriers and low device performance. Moreover, the gate leakage phenomenon is caused by conduction through charge traps. So, as a component of TFTs, the gate dielectric is of crucial importance to the manufacture of high quality TFTs from the aspects of affecting the gate leakage current and device operation voltage, as well as the charge carrier transport. Interestingly, the OTS-modified SiO2 allows to directly print horizontally aligned CNT film, and the corresponding devices exhibited a higher mobility than that of the devices with the hybrid PMMA/SiO2 dielectric although the thickness of OTS layer is only ˜2.5 nm. Our present result may provide key guidance for the further development of printed nanomaterial electronics.

Calculation of Growth Stress in SiO2 Scales Formed by Oxidation of SiC Fibers (PREPRINT)

DTIC Science & Technology

2012-07-01

Poisson effect. Tensile hoop stresses can be >2 GPa for thick scales formed at 򒮨°C. Effects of different fiber radii on growth stresses are examined...original fiber radius and Ω is the ratio of SiC/SiO2 molar volume ratio . The outer radius of the SiO2 scale (c) is (Fig. 1): c = b+w...and νSiO2 are Poison’s ratio for the SiC fiber and the SiO2 scale. Stresses in older increments (j = i-2 to j = 0) are updated with the stress values

A combined interfacial and in-situ polymerization strategy to construct well-defined core-shell epoxy-containing SiO2-based microcapsules with high encapsulation loading, super thermal stability and nonpolar solvent tolerance

NASA Astrophysics Data System (ADS)

Jia; Wang; Tian; Li; Xu; Jiao; Cao; Wu

2016-10-01

SiO2-based microcapsules containing hydrophobic molecules exhibited potential applications such as extrinsic self-healing, drug delivery, due to outstanding thermal and chemical stability of SiO2. However, to construct SiO2-based microcapsules with both high encapsulation loading and long-term structural stability is still a troublesome issue, limiting their further utilization. We herein design a single-batch route, a combined interfacial and in-situ polymerization strategy, to fabricate epoxy-containing SiO2-based microcapsules with both high encapsulation loading and long-term structural stability. The final SiO2-based microcapsules preserve high encapsulation loading of 85.7 wt% by controlling exclusively hydrolysis and condensed polymerization at oil/water interface in the initial interfacial polymerization step. In the subsequent in-situ polymerization step, the initial SiO2-based microcapsules as seeds could efficiently harvest SiO2 precursors and primary SiO2 particles to finely tune the SiO2 wall thickness, thereby enhancing long-term structural stability of the final SiO2-based microcapsules including high thermal stability with almost no any weight loss until 250°C, and strong tolerance against nonpolar solvents such as CCl4 with almost unchanged core-shell structure and unchanged core weight after immersing into strong solvents for up to 5 days. These SiO2-based microcapsules are extremely suited for processing them into anticorrosive coating in the presence of nonpolar solvents for self-healing application.

Synthesis of subnanometer-diameter vertically aligned single-walled carbon nanotubes with copper-anchored cobalt catalysts

NASA Astrophysics Data System (ADS)

Cui, Kehang; Kumamoto, Akihito; Xiang, Rong; An, Hua; Wang, Benjamin; Inoue, Taiki; Chiashi, Shohei; Ikuhara, Yuichi; Maruyama, Shigeo

2016-01-01

We synthesize vertically aligned single-walled carbon nanotubes (VA-SWNTs) with subnanometer diameters on quartz (and SiO2/Si) substrates by alcohol CVD using Cu-anchored Co catalysts. The uniform VA-SWNTs with a nanotube diameter of 1 nm are synthesized at a CVD temperature of 800 °C and have a thickness of several tens of μm. The diameter of SWNTs was reduced to 0.75 nm at 650 °C with the G/D ratio maintained above 24. Scanning transmission electron microscopy energy-dispersive X-ray spectroscopy (EDS-STEM) and high angle annular dark field (HAADF-STEM) imaging of the Co/Cu bimetallic catalyst system showed that Co catalysts were captured and anchored by adjacent Cu nanoparticles, and thus were prevented from coalescing into a larger size, which contributed to the small diameter of SWNTs. The correlation between the catalyst size and the SWNT diameter was experimentally clarified. The subnanometer-diameter and high-quality SWNTs are expected to pave the way to replace silicon for next-generation optoelectronic and photovoltaic devices.We synthesize vertically aligned single-walled carbon nanotubes (VA-SWNTs) with subnanometer diameters on quartz (and SiO2/Si) substrates by alcohol CVD using Cu-anchored Co catalysts. The uniform VA-SWNTs with a nanotube diameter of 1 nm are synthesized at a CVD temperature of 800 °C and have a thickness of several tens of μm. The diameter of SWNTs was reduced to 0.75 nm at 650 °C with the G/D ratio maintained above 24. Scanning transmission electron microscopy energy-dispersive X-ray spectroscopy (EDS-STEM) and high angle annular dark field (HAADF-STEM) imaging of the Co/Cu bimetallic catalyst system showed that Co catalysts were captured and anchored by adjacent Cu nanoparticles, and thus were prevented from coalescing into a larger size, which contributed to the small diameter of SWNTs. The correlation between the catalyst size and the SWNT diameter was experimentally clarified. The subnanometer-diameter and high-quality SWNTs are expected to pave the way to replace silicon for next-generation optoelectronic and photovoltaic devices. Electronic supplementary information (ESI) available: Comparison between the Co monometallic catalyst system and the Co/Mo bimetallic catalyst system, the effect of CVD temperature on the G/D ratio, the effect of ethanol partial pressure on the morphology, diameter and quality of SWNT films, and Raman spectra of the Si/SiO2 substrate. See DOI: 10.1039/c5nr06007a

Optical, mechanical and structural properties of PMMA/SiO2 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-01-01

We have fabricated PMMA/SiO2 nanocomposite flexible thin films of 60 μm thicknesses by using solution casting method in the presence of transverse electric field. In this paper, we have investigated the effect of SiO2 nanoparticle (NP) loading on optical and mechanical properties of the composite thin film. The SEM images show that nanocomposite thin films have a smoother and uniform morphology. The transmittance peak near 1103 cm-1 in FT-IR spectrum confirms the presence of SiO2 NPs in the composite thin film. It is observed that optical bandgap decreases with an increase in the SiO2 NP concentration. Dynamic mechanical analysis shows that presence of SiO2 NP enhances the mechanical strength of the composite thin film.

Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-04-01

Low-angle-incidence microchannel epitaxy (LAIMCE) of a-plane GaN was performed using ammonia-based metal-organic molecular beam epitaxy to obtain wide and thin lateral overgrowth over a SiO2 mask. Trimethylgallium (TMG) was supplied perpendicular to the openings cut in the mask with a low incident angle of 5° relative to the substrate plane. The [NH3]/[TMG] ratio (R) dependence of GaN LAIMCE was optimized by varying R from 5 to 30. A wide lateral overgrowth of 3.7 µm with a dislocation density below the transmission electron microscope detection limit was obtained at R=15 for a thickness of 520 nm.

Porous Fe3O4-SiO2 core-shell nanorods as high-performance MRI contrast agent and drug delivery vehicle

NASA Astrophysics Data System (ADS)

Beg, Muhammad Shahbaz; Mohapatra, Jeotikanta; Pradhan, Lina; Patkar, D.; Bahadur, D.

2017-04-01

A high-performance MRI contrast agent and a drug nanocarrier have been realized in porous Fe3O4@SiO2 nanorods (NRs). The Fe3O4@SiO2 NRs of length 520 nm and diameter 180 nm are synthesized by annealing FeOOH@SiO2 nanorods at a temperature of 300 ℃ under continuous flow of forming gas. The magnetic measurement confirms that the Fe3O4@SiO2 NRs is ferrimagnetic in nature with magnetization of 20 emu/g and coercivity HC 450 Oe. The aqueous suspension of the NRs is stable over a time frame of one month and exhibits a high R2 relaxivity value of 192 mM-1 s-1. The R2 darkening effect is also observed in HeLa cells incubated with NRs in comparison to untreated control cells. The porous Fe3O4@SiO2 NRs further work as an excellent carrier for doxorubicin (DOX) drug with loading efficiency of 65%. The drug release study shows a pH-dependent behavior and is higher in acidic pH (4.3) as compared to the physiological pH (7.4). After 72 h, the cumulative DOX release is found to be 58% at pH 4.3 and 17% at pH 7.4. The induction heating studies of the NRs exhibit a sharp increasing trend of SAR value with the increase of magnetic field.

Effect of temperature on optical properties of PMMA/SiO2 composite thin film

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-05-01

Effect of temperature on PMMA/SiO2 composites thin films were investigated. Nanocomposite flexible thin films of 60 µm thicknesses with different loading of SiO2 nanoparticles were prepared using solution casting method. SEM images show that SiO2 nanoparticles are distributed uniformly in PMMA matrix without any lumps on the surface, and PMMA/SiO2 nano composite thin films had a smoother and regular morphology. UV-Vis and optical band gap measurements revealed that both the concentration of SiO2 nanoparticles and temperature affect the optical properties of the composite thin film in comparison to the pure PMMA film.

Yb:Lu2SiO5 crystal : characterization of the laser emission along the three dielectric axes

NASA Astrophysics Data System (ADS)

Toci, Guido; Pirri, Angela; Beitlerova, Alena; Shoji, Yasuhiro; Yoshikawa, Akira; Hybler, Jiri; Nikl, Martin; Vannini, Matteo

2015-05-01

Yb:doped Lu2SiO5 (Lutetium orthosilicate, LSO) is an optically biaxial crystal with laser emission in the range 1000- 1100 nm. It features different absorption and emission spectra for polarization along its three dielectric axes. In this work we have characterized the laser emission properties of Yb:LSO along all the three dielectric axis, evidencing differences that can be exploited in the design of ultrafast laser sources. The material was tested in a longitudinally pumped laser cavity. The laser emission efficiency was found similar along all the three dielectric axes, with slope efficiencies around 90% in most cases. Regarding the tuning range, for the most favourable polarization direction we obtained a continuously tunable emission between 993 and 1088 nm (i. e. 95 nm) peaked at 1040 nm. The tuning curves along the three dielectric axes spanned similar ranges but with relevant differences in the shape.

Potential of SiO2/ZrO2 matrix doped with CoFe2O4 magnetic nanoparticles in achieving integrated magneto-optical isolators

NASA Astrophysics Data System (ADS)

Zamani, Mehdi; Hocini, Abdesselam

2017-05-01

We have investigated the potential of the SiO2/ZrO2 matrix doped with CoFe2O4 magnetic nanoparticles in order to overcome the problem of integration of the magneto-optical isolators (MOIs). In this way, we have performed a theoretical study for the case of designing perfect and adjustable MOIs based on magnetophotonic crystals (MPCs) containing SiO2/ZrO2 matrix doped with CoFe2O4 magnetic nanoparticles as a magnetic medium. Despite the existence the attenuation coefficient for SiO2/ZrO2 matrix at wavelength 1550 nm that leads to a non-perfect transmittance, we could introduce an MPC structure having no reflectance; therefore, an ideal MOI for eliminating unwanted back-reflection could be achieved.

Design of laser-driven SiO2-YAG:Ce composite thick film: Facile synthesis, robust thermal performance, and application in solid-state laser lighting

NASA Astrophysics Data System (ADS)

Xu, Jian; Liu, Bingguo; Liu, Zhiwen; Gong, Yuxuan; Hu, Baofu; Wang, Jian; Li, Hui; Wang, Xinliang; Du, Baoli

2018-01-01

In recent times, there have been rapid advances in the solid-state laser lighting technology. Due to the large amounts of heat accumulated from the high flux laser radiation, color conversion materials used in solid-state laser lighting devices should possess high durability, high thermal conductivity, and low thermal quenching. The aim of this study is to develop a thermally robust SiO2-YAG:Ce composite thick film (CTF) for high-power solid-state laser lighting applications. Commercial colloidal silica which was used as the source of SiO2, played the roles of an adhesive, a filler, and a protecting agent. Compared to the YAG:Ce powder, the CTF exhibits remarkable thermal stability (11.3% intensity drop at 200 °C) and durability (4.5% intensity drop after 1000 h, at 85 °C and 85% humidity). Furthermore, the effects of the substrate material and the thickness of the CTF on the laser lighting performance were investigated in terms of their thermal quenching and luminescence saturation behaviors, respectively. The CTF with a thickness of 50 μm on a sapphire substrate does not show luminescence saturation, despite a high-power density of incident radiation i.e. 20 W/mm2. These results demonstrate the potential applicability of the CTF in solid-state laser lighting devices.

Synthesis of magnetically recyclable MnFe2O4@SiO2@Ag nanocatalyst: Its high catalytic performances for azo dyes and nitro compounds reduction

NASA Astrophysics Data System (ADS)

Kurtan, U.; Amir, Md.; Yıldız, A.; Baykal, A.

2016-07-01

In this study, magnetically recycable MnFe2O4@SiO2@Ag nanocatalyst (MnFe2O4@SiO2@Ag MRCs) has been synthesized through co-precipition and chemical reduction method. XRD analysis confirmed the synthesis of single phase nanoproduct with crystallite size of 10 nm. VSM measurements showed the superparamagnetic property of the product. Catalytic studies showed that MnFe2O4@SiO2@Ag MRC could catalyze the reduction of the various azo compounds like methyl orange (MO), methylene blue (MB), eosin Y (EY), and rhodamine B (RhB) and also aromatic nitro compounds such as 4-nitrophenol (4-NP), 4-nitroaniline (4-NA) and 2-nitroaniline (2-NA). Moreover, the magnetic nanocatalyst showed an excellent reusability properties that remained unchanged after several cycles. Therefore, MnFe2O4@SiO2@Ag is the potential candidate for the application of organic pollutants for wastewater treatment.

Electrical properties of Bi2Mg2/3Nb4/3O7 (BMN) pyrochlore thin films deposited on Pt and Cu metal at low temperatures for embedded capacitor applications

NASA Astrophysics Data System (ADS)

Xian, Cheng-Ji; Park, Jong-Hyun; Ahn, Kyung-Chan; Yoon, Soon-Gil; Lee, Jeong-Won; Kim, Woon-Chun; Lim, Sung-Taek; Sohn, Seung-Hyun; Moon, Jin-Seok; Jung, Hyung-Mi; Lee, Seung-Eun; Lee, In-Hyung; Chung, Yul-Kyo; Jeon, Min-Ku; Woo, Seong-Ihl

2007-01-01

200-nm-thick BMN films were deposited on Pt /TiO2/SiO2/Si and Cu /Ti/SiO2/Si substrates at various temperatures by pulsed laser deposition. The dielectric constant and capacitance density of the films deposited on Pt and Cu electrodes show similar tendency with increasing deposition temperature. On the other hand, dielectric loss of the films deposited on Cu electrode varies from 0.7% to 1.3%, while dielectric loss of films on Pt constantly shows 0.2% even though the deposition temperature increases. The low value of breakdown strength in BMN films on Pt compared to films deposited on Cu electrode was attributed to the increase of surface roughness by the formation of secondary phases at interface between BMN films and Pt electrodes.

Metabolomic effects of CeO2, SiO2 and CuO metal oxide nanomaterials on HepG2 cells

EPA Science Inventory

To better assess potential hepatotoxicity of nanomaterials, human liver HepG2 cells were exposed for 3 days to five different CeO2 (either 30 or 100 μg/ml), 3 SiO2 based (30 μg/ml) or 1 CuO (3 μg/ml) nanomaterials with dry primary particle sizes ranging from 15 to 213 nm. Metabol...

Effect of particle size on the photochromic response of PWA/SiO2 nanocomposite

NASA Astrophysics Data System (ADS)

Huang, Feng-Hsi; Chen, Ching-Chung; Lin, Dar-Jong; Don, Trong-Ming; Cheng, Liao-Ping

2010-10-01

A series of photochromic phosphotungstic acid (PWA)/SiO2 composites were synthesized using the sol-gel method. Depending on the feeding schedule of PWA during synthesis, the size of the formed PWA/SiO2 particles varied considerably from as small as 1.2 nm to ca. 10 nm. With decreasing silica particle size, the total contact area/interaction between SiO2 and PWA increases, as revealed by FT-IR and solid-state 29Si-NMR analyses. Particularly, when the size of PWA/SiO2 is 1 nm, crystallization of PWA is inhibited, and PWA presents as amorphous molecular entities distributing uniformly in the SiO2 host, which is in evidence in the XRD spectroscopy and HR-TEM imaging. In contrast, substantial crystallization of PWA takes place when PWA/SiO2 particles are as large as 10 nm, in which case less amount of surface free Si-OH is available for PWA to make bonds with. Photochromism occurs activated by ultraviolet light irradiation. The rate of coloration/bleaching is found to depend strongly on the particle size of PWA/SiO2; specifically, the rate increases twice when the particle size is reduced from 10 nm to 1.2 nm.

Driving the photoluminescent and structural properties of X2-Y2SiO5 by varying the dopant Dy3+ concentration towards cool WLED applications

NASA Astrophysics Data System (ADS)

Ramakrishna, G.; Nagabhushana, H.; Hareesh, K.; Sunitha, D. V.

2017-07-01

Dy3+ doped Y2SiO5 nanophosphors were synthesized by solution combustion technique using Calotropis gigantean milk latex and NaCl as fuel and flux respectively. Powder X-ray diffraction (PXRD) confirmed the formation of monoclinic X2-phase Y2SiO5 belonging to the phase group C2/c. Fourier transform infrared spectroscopy (FTIR) shows characteristic metal-oxygen (Y-O) vibration band at 721 cm-1. Transmission electron microscopic (TEM) and Scanning electron microscopic (SEM) morphological feature exhibits non-uniform almost spherical shaped nanosized particles. The photoluminescence (PL) emission peaks, recorded at 388 nm, showed radiative emissions at 483, 575 and 636 nm respectively. Judd-Ofelt (JO) analysis was carried out to estimate the radiative (AR) properties, radiative life time (τR), branching ratio (βR) and stimulated emission crossection (σλp). The CIE and CCT was estimated using McCamy empirical formula. In the beginning, the CIE co-ordinate values were lying in the light blue region. However, with increase in Dy3+ concentration the values shifted towards white region. CCT value was found to be ∼6984 K. Therefore, Y2SiO5:Dy3+ (9 mol%) can be used for cool day light and WLED applications.

Luminescence properties of Ca2 Ga2 SiO7 :RE phosphors for UV white-light-emitting diodes.

PubMed

Jiao, Mengmeng; Lv, Wenzhen; Lü, Wei; Zhao, Qi; Shao, Baiqi; You, Hongpeng

2015-03-16

A series of Eu(2+) -, Ce(3+) -, and Tb(3+) -doped Ca2 Ga2 SiO7 phosphors is synthesized by using a high-temperature solid-state reaction. The powder X-ray diffraction and structure refinement data indicate that our prepared phosphors are single phased and the phosphor crystalizes in a tetrahedral system with the ${P\\bar 42m}$ (113) space group. The Eu(2+) - and Ce(3+) -doped phosphors both have broad excitation bands, which match well with the UV light-emitting diodes chips. Under irradiation of λ=350 nm, Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) have green and blue emissions, respectively. Luminescence of Ca2 Ga2 SiO7 :Tb(3+) , Li(+) phosphor varies with the different Tb(3+) contents. The thermal stability and energy-migration mechanism of Ca2 Ga2 SiO7 :Eu(2+) are also studied. The investigation results indicate that the prepared Ca2 Ga2 SiO7 :Eu(2+) and Ca2 Ga2 SiO7 :Ce(3+) , Li(+) samples show potential as green and blue phosphors, respectively, for UV-excited white-light-emitting diodes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells.

PubMed

Eyderman, Sergey; John, Sajeev

2016-06-23

We demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2. Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm(2) is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10(3) cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.

Elucidating the sole contribution from electromagnetic near-fields in plasmon-enhanced Cu 2O photocathodes

DOE PAGES

DuChene, Joseph S.; Williams, Benjamin P.; Johnston-Peck, Aaron C.; ...

2015-11-05

Despite many promising reports of plasmon-enhanced photocatalysis, the inability to identify the individual contributions from multiple enhancement mechanisms has delayed the development of general design rules for engineering efficient plasmonic photocatalysts. Herein, we construct a plasmonic photocathode comprised of Au@SiO 2 (core@shell) nanoparticles embedded within a Cu 2O nanowire network to exclusively examine the contribution from one such mechanism: electromagnetic near-field enhancement. The influence of the local electromagnetic field intensity is correlated with the overall light-harvesting efficiency of the device through variation of the SiO 2 shell thickness (5—22 nm) to systematically tailor the distance between the plasmonic Au nanoparticlesmore » and the Cu 2O nanowires. A three-fold increase in device photocurrent is achieved upon integrating the Au@SiO 2 nanoparticles into the Cu 2O nanowire network, further enabling a ~40% reduction in semiconductor film thickness while maintaining photocathode performance. Photoelectrochemical results are further correlated with photoluminescence studies and optical simulations to confirm that the near-field enhancement is the sole mechanism responsible for increased light absorption in the plasmonic photocathode.« less

Synthesis and characterization of Mg2SiO4:Tb3+, Eu3+ phosphors for white light generation

NASA Astrophysics Data System (ADS)

Cho, Shinho

2016-09-01

The effect of Eu3+ codoping on the structural, morphological, and optical properties of Mg2SiO4:Tb3+ was investigated. The phosphor powders were synthesized by changing the molar concentration of Eu3+ at a fixed Tb3+ content of 5 mol% by using a conventional solid-state reaction. The X-ray diffraction patterns revealed that the crystal structure of all the phosphors, irrespective of the Eu3+ and the Tb3+ contents, showed an orthorhombic structure, and the surface morphology exhibited pebble-like crystalline grains. The emission spectra of Eu3+ and Tb3+-codoped Mg2SiO4 phosphors under an ultraviolet excitation of 252 nm consisted of one intense red band at 619 nm and five weak bands at 448, 488, 598, 658, and 707 nm originating from the transitions of Eu3+, in addition to the several emission bands located at 492, 552, 592, and 628 nm arising from the transitions of Tb3+. As the Eu3+ content was increased, the intensity of the main green emission band at 552 nm decreased markedly and disappeared at 10 mol% Eu3+, when complete energy transfer from Tb3+ to Eu3+ was observed. The results suggest that the emission wavelength and the luminescent intensity of the phosphors can be tuned by modulating the Eu3+ and the Tb3+ contents incorporated into the host matrix.

Effect of deposition pressure on the morphology and structural properties of carbon nanotubes synthesized by hot-filament chemical vapor deposition.

PubMed

Arendse, C J; Malgas, G F; Scriba, M R; Cummings, F R; Knoesen, D

2007-10-01

Hot-filament chemical vapor deposition has developed into an attractive method for the synthesis of various carbon nanostructures, including carbon nanotubes. This is primarily due to its versatility, low cost, repeatability, up-scalability, and ease of production. The resulting nano-material synthesized by this technique is dependent on the deposition conditions which can be easily controlled. In this paper we report on the effect of the deposition pressure on the structural properties and morphology of carbon nanotubes synthesized by hot-filament chemical vapor deposition, using Raman spectroscopy and high-resolution scanning electron microscopy, respectively. A 10 nm-thick Ni layer, deposited on a SiO2/Si substrate, was used as catalyst for carbon nanotube growth. Multi-walled carbon nanotubes with diameters ranging from 20-100 nm were synthesized at 500 degrees C with high structural perfection at deposition pressures between 150 and 200 Torr. Raman spectroscopy measurements confirm that the carbon nanotube deposit is homogeneous across the entire substrate area.

Sensitive SERS detection at the single-particle level based on nanometer-separated mushroom-shaped plasmonic dimers

NASA Astrophysics Data System (ADS)

Xiang, Quan; Li, Zhiqin; Zheng, Mengjie; Liu, Qing; Chen, Yiqin; Yang, Lan; Jiang, Tian; Duan, Huigao

2018-03-01

Elevated metallic nanostructures with nanogaps (<10 nm) possess advantages for surface enhanced Raman scattering (SERS) via the synergic effects of nanogaps and efficient decoupling from the substrate through an elevated three-dimensional (3D) design. In this work, we demonstrate a pattern-transfer-free process to reliably define elevated nanometer-separated mushroom-shaped dimers directly from 3D resist patterns based on the gap-narrowing effect during the metallic film deposition. By controlling the initial size of nanogaps in resist structures and the following deposited film thickness, metallic nanogaps could be tuned at the sub-10 nm scale with single-digit nanometer precision. Both experimental and simulated results revealed that gold dimer on mushroom-shaped pillars have the capability to achieve higher SERS enhancement factor comparing to those plasmonic dimers on cylindrical pillars or on a common SiO2/Si substrate, implying that the nanometer-gapped elevated dimer is an ideal platform to achieve the highest possible field enhancement for various plasmonic applications.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

PubMed

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Multi-layer coating of SiO2 nanoparticles to enhance light absorption by Si solar cells

NASA Astrophysics Data System (ADS)

Nam, Yoon-Ho; Um, Han-Don; Park, Kwang-Tae; Shin, Sun-Mi; Baek, Jong-Wook; Park, Min-Joon; Jung, Jin-Young; Zhou, Keya; Jee, Sang-Won; Guo, Zhongyi; Lee, Jung-Ho

2012-06-01

We found that multi-layer coating of a Si substrate with SiO2 dielectric nanoparticles (NPs) was an effective method to suppress light reflection by silicon solar cells. To suppress light reflection, two conditions are required for the coating: 1) The difference of refractive indexes between air and Si should be alleviated, and 2) the quarter-wavelength antireflection condition should be satisfied while avoiding intrinsic absorption loss. Light reflection was reduced due to destructive interference at certain wavelengths that depended on the layer thickness. For the same thickness dielectric layer, smaller NPs enhanced antireflectance more than larger NPs due to a decrease in scattering loss by the smaller NPs.

Effect of laser irradiation on the early-stage seed formation of laser-induced submicrometer-scale silica spheres

NASA Astrophysics Data System (ADS)

Kim, H. J.; Ha, S. Y.; Hong, Y. J.; Nam, S.; Oh, S. Y.; Lim, C.

2014-04-01

We describe the effect of irradiation on the early-stage seed formation of submicrometer-scale (SS) SiO2 spheres by a laser-induced process. A quartz cell containing chemical reagents was exposed to a pulsed laser (Nd:YAG, 532 nm) tuned to various energy densities, while SiO2 SS spheres are synthesized in the quartz cell by the Stöber, Fink, and Bohn method. Higher laser energy densities typically produce wider size distributions. In particular, bidisperse SiO2 spheres were obtained when the laser energy density was 1.15 J/cm2. The size distributions were widest with 1.15 J/cm2 and narrowest with 0.33 J/cm2 laser energy density. However, the compositions of the SiO2 SS spheres were not affected by laser irradiation, and we observed by the energy-dispersive X-ray spectroscopy that the compositions of the irradiated and nonirradiated SiO2 SS spheres were the same.

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

2017-05-01

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

Effect of substrate and post-deposition annealing on nanostructure and optical properties of CdTe thin films

NASA Astrophysics Data System (ADS)

Hasani, Ebrahim; Raoufi, Davood

2018-04-01

Thermal evaporation is one of the promising methods for depositing CdTe thin films, which can obtain the thin films with the small thickness. In this work, CdTe nanoparticles have deposited on SiO2 substrates such as quartz (crystal) and glass (amorphous) at a temperature (Ts) of 150 °C under a vacuum pressure of 2 × 10‑5 mbar. The thickness of CdTe thin films prepared under vacuum pressure is 100 nm. X-ray diffraction analysis (XRD) results showed the formation of CdTe cubic phase with a strong preferential orientation of (111) crystalline plane on both substrates. The grain size (D) in this orientation obtained about 7.41 and 5.48 nm for quartz and glass respectively. Ultraviolet-visible spectroscopy (UV–vis) measurements indicated the optical band gap about 1.5 and 1.52 eV for CdTe thin films deposited on quartz and glass respectively. Furthermore, to show the effect of annealing temperature on structure and optical properties of CdTe thin films on quartz and glass substrates, the thin films have been annealed at temperatures 50 and 70 °C for one hour. The results of this work indicate that the structure’s parameters and optical properties of CdTe thin films change due to increase in annealing temperature.

Nrf2 protects against oxidative stress induced by SiO2 nanoparticles.

PubMed

Liu, Wei; Hu, Tao; Zhou, Li; Wu, Desheng; Huang, Xinfeng; Ren, Xiaohu; Lv, Yuan; Hong, Wenxu; Huang, Guanqin; Lin, Zequn; Liu, Jianjun

2017-10-01

The aim of our study was to explore the role of nuclear factor erythroid 2 (NF-E2)-related factor 2 (Nrf2) on the exposure of SiO 2 nanoparticles (NPs) and its influence. To understand the mechanism of NP-induced oxidative stress, the involvement of oxidative-stress-responding transcription factors and the Nrf2/antioxidant reactive element (ARE) signaling pathway in the toxicity of SiO 2 NPs' exposure was investigated via in vivo and in vitro models. A549 cells showed a significant cytotoxic effect while A549-shNrf2 cells showed decreased cell viability after nm-SiO 2 exposure. SiO 2 NPs' exposure activated the Nrf2/ARE signaling pathway. Nrf2 -/- exposed mice showed increased reactive oxygen species, 8-hydroxyl deoxyguanosine level and decreased total antioxidant capacity. Nrf2/ARE signaling pathway activation disrupted, leading inhibition of heme oxygenase-1 and upregulation of PKR-like endoplasmic-reticulum-regulated kinase. Our findings suggested that Nrf2 could protect against oxidative stress induced by SiO 2 NPs, and the Nrf2/ARE pathway might be involved in mild-to-moderate SiO 2 NP-induced oxidative stress that was evident from dampened activity of Nrf2.

Influence of SiO2 shell thickness on power conversion efficiency in plasmonic polymer solar cells with Au nanorod@SiO2 core-shell structures

PubMed Central

Zhang, Ran; Zhou, Yongfang; Peng, Ling; Li, Xue; Chen, Shufen; Feng, Xiaomiao; Guan, Yuqiao; Huang, Wei

2016-01-01

Locating core-shell metal nanoparticles into a photoactive layer or at the interface of photoactive layer/hole extraction layer is beneficial for fully employing surface plasmon energy, thus enhancing power conversion efficiency (PCE) in plasmonic organic photovoltaic devices (OPVs). Herein, we first investigated the influence of silica shell thickness in Au nanorods (NRs)@SiO2 core-shell structures on OPV performances by inserting them into poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) and thieno[3,4-b]thiophene/benzodithiophene (PTB7) interface, and amazedly found that a 2–3 nm silica shell onto Au NRs induces a highest short-circuit current density of 21.2 mA cm−2 and PCE of 9.55%. This is primarily due to an extremely strong local field and a much slower attenuation of localized surface plasmon resonance around ultrathin silica-coated Au NRs, with which the field intensity remains a high value in the active layer, thus sufficiently improves the absorption of PTB7. Our work provides a clear design concept on precise control of the shell of metal nanoparticles to realize high performances in plasmonic OPVs. PMID:27125309

Influence of SiO2 shell thickness on power conversion efficiency in plasmonic polymer solar cells with Au nanorod@SiO2 core-shell structures.

PubMed

Zhang, Ran; Zhou, Yongfang; Peng, Ling; Li, Xue; Chen, Shufen; Feng, Xiaomiao; Guan, Yuqiao; Huang, Wei

2016-04-29

Locating core-shell metal nanoparticles into a photoactive layer or at the interface of photoactive layer/hole extraction layer is beneficial for fully employing surface plasmon energy, thus enhancing power conversion efficiency (PCE) in plasmonic organic photovoltaic devices (OPVs). Herein, we first investigated the influence of silica shell thickness in Au nanorods (NRs)@SiO2 core-shell structures on OPV performances by inserting them into poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) and thieno[3,4-b]thiophene/benzodithiophene (PTB7) interface, and amazedly found that a 2-3 nm silica shell onto Au NRs induces a highest short-circuit current density of 21.2 mA cm(-2) and PCE of 9.55%. This is primarily due to an extremely strong local field and a much slower attenuation of localized surface plasmon resonance around ultrathin silica-coated Au NRs, with which the field intensity remains a high value in the active layer, thus sufficiently improves the absorption of PTB7. Our work provides a clear design concept on precise control of the shell of metal nanoparticles to realize high performances in plasmonic OPVs.

A comparative investigation of Lu2SiO5:Ce and Gd2O2S:Eu powder scintillators for use in x-ray mammography detectors

NASA Astrophysics Data System (ADS)

Michail, C. M.; Fountos, G. P.; David, S. L.; Valais, I. G.; Toutountzis, A. E.; Kalyvas, N. E.; Kandarakis, I. S.; Panayiotakis, G. S.

2009-10-01

The dominant powder scintillator in most medical imaging modalities for decades has been Gd2O2S:Tb due to the very good intrinsic properties and overall efficiency. Apart from Gd2O2S:Tb, there are alternative powder phosphor scintillators such as Lu2SiO5:Ce and Gd2O2S:Eu that have been suggested for use in various medical imaging modalities. Gd2O2S:Eu emits red light and can be combined mainly with digital mammography detectors such as CCDs. Lu2SiO5:Ce emits blue light and can be combined with blue sensitivity films, photocathodes and some photodiodes. For the purposes of the present study, two scintillating screens, one from Lu2SiO5:Ce and the other from Gd2O2S:Eu powders, were prepared using the method of sedimentation. The screen coating thicknesses were 25.0 and 33.1 mg cm-2 respectively. The screens were investigated by evaluating the following parameters: the output signal, the modulation transfer function, the noise equivalent passband, the informational efficiency, the quantum detection efficiency and the zero-frequency detective quantum efficiency. Furthermore, the spectral compatibility of those materials with various optical detectors was determined. Results were compared to published data for the commercially employed 'Kodak Min-R film-screen system', based on a 31.7 mg cm-2 thick Gd2O2S:Tb phosphor. For Gd2O2S:Eu, MTF data were found comparable to those of Gd2O2S:Tb, while the MTF of Lu2SiO5:Ce was even higher resulting in better spatial resolution and image sharpness properties. On the other hand, Gd2O2S:Eu was found to exhibit higher output signal and zero-frequency detective quantum efficiency than Lu2SiO5:Ce.

Evolution of size distribution and structure of Si and SiO2 nanoparticles: laser-assisted formation and fragmentation

NASA Astrophysics Data System (ADS)

Eidelman, K.; Gudkov, D.; Segbefia, O.; Ageev, E.; Krivonosov, A.; Matuhina, A.

2017-11-01

In this work, Si and SiO2, nanoparticles (NPs) was prepared by pulsed laser ablation (PLA) in distilled water. The radiation of a ytterbium fiber laser (repetition rate f = 50 kHz, wavelength λ = 1064 nm and pulse duration τ = 8 ns and 100 ns) at different laser intensities was utilized to ablate the Si target (99.999%, cubic, 7×7 mm2) under liquid layer to synthesize and to fragment the silicon colloidal NPs. Studies of morphology and size distribution of silica NPs were conducted using Transmission Electron Microscopy (TEM). The NPs of crystalline and amorphous phases were founded. Most of the NPs in the nano colloids were found to have dimensions less than 100 nm, and a few of them were between 100 nm and 700 nm. Dependence of average NP size on the number of laser passes was revealed. The average size of the nanoparticles obtained by TEM was confirmed by dynamic light scattering (DLS) measurements.

A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

PubMed

Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

2011-09-01

In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Arshad, Muhammad; Saveda Suvanam, Sethu; Hallén, Anders

2018-03-01

The instability of Al2O3/4H-SiC interface at various process temperatures and ambient is investigated by the annealing of Al2O3/4H-SiC in low vacuum conditions as well as in N2 environments. Atomic layer deposited Al2O3 on a 4H-SiC substrate with 3, 6 and 10 nm of thicknesses is treated at 300, 500, 700 and 900 °C under the vacuum level of 10-1 torr. The as-deposited and annealed structures are analyzed using x-ray photoelectron spectroscopy. It is hypothesized that the minute quantity of oxygen present in low vacuum conditions diffuses through thin layers of Al2O3 and helps in forming SiO2 at the interface even at low temperatures (i.e. 300 °C), which plays a pivotal role in determining the electrical properties of the interface. It is also proved that the absence of oxygen in the ambient prevents the formation of SiO2 at low temperatures. Additionally, it is observed that Al-OH is present in as-deposited layers, which gradually reduces after annealing. However, at around 700 °C, the concentration of oxygen in the whole structure increases to maximum and reduces at 900 °C.

Color Doppler Ultrasound and Gamma Imaging of Intratumorally Injected 500 nm Iron-Silica Nanoshells

PubMed Central

Liberman, Alexander; Wu, Zhe; Barback, Christopher V.; Viveros, Robert; Blair, Sarah L.; Ellies, Lesley G.; Vera, David R.; Mattrey, Robert F.; Kummel, Andrew C.; Trogler, William C.

2013-01-01

Perfluoropentane gas filled iron-silica nanoshells have been developed as stationary ultrasound contrast agents for marking tumors to guide surgical resection. It is critical to establish their long term imaging efficacy, as well as biodistribution. This work shows that 500 nm Fe-SiO2 nanoshells can be imaged by color Doppler ultrasound over the course of 10 days in Py8119 tumor bearing mice. The 500 nm non-biodegradable SiO2 and biodegradable Fe-SiO2 nanoshells were functionalized with diethylenetriamine pentaacetic acid (DTPA) ligand and radiolabeled with 111In3+ for biodistribution studies in nu/nu mice. The majority of radioactivity was detected in the liver and kidneys following intravenous (IV) administration of nanoshells to healthy animals. By contrast, after nanoshells were injected intratumorally, most of the radioactivity remained at the injection site; however, some nanoshells escaped into circulation and were distributed similarly as those given intravenously. For intratumoral delivery of nanoshells and IV delivery to healthy animals, little difference was seen between the biodistribution of SiO2 and biodegradable Fe-SiO2 nanoshells. However, when nanoshells were administered IV to tumor bearing mice, a significant increase was observed in liver accumulation of SiO2 nanoshells relative to biodegradable Fe-SiO2 nanoshells. Both SiO2 and Fe-SiO2 nanoshells accumulate passively in proportion to tumor mass, during intravenous delivery of nanoshells. This is the first report of the biodistribution following intratumoral injection of any biodegradable silica particle, as well as the first report demonstrating the utility of DTPA-111In labeling for studying silica nanoparticle biodistributions. PMID:23802554

The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Esposito, Daniel V.

2015-08-01

Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well

NASA Astrophysics Data System (ADS)

Seok, Ogyun; Ha, Min-Woo; Kang, In Ho; Kim, Hyoung Woo; Kim, Dong Young; Bahng, Wook

2018-06-01

The effects of a trench profile and self-aligned ion implantation on the electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs employing a bottom protection p-well (BPW) were investigated to improve blocking capability by simulation studies. The trench profile and thickness of a SiO2 spacer during self-aligned ion implantation for BPW affect electrons flow through a trench gate as well as E-field concentration at the gate insulator on a trench bottom. At trench angle higher than 84° and a SiO2 spacer thicker than 0.2 µm showed that the Al concentration penetrated into the trench sidewall during ion implantation is less than 0.3% in comparison with the background doping concentration in a drift region. Under the optimum conditions with a trench angle of 90° and 0.2-µm-thick SiO2 spacer, a high breakdown voltage of 1.45 kV with a low E-field peak in the gate insulator was achieved.

Insight into the localized surface plasmon resonance property of core-satellite nanostructures: Theoretical prediction and experimental validation.

PubMed

Song, Dongxing; Jing, Dengwei

2017-11-01

Regulation of the localized surface plasmon resonance (LSPR) of nanoparticles by changing the dielectric constant of the surrounding medium has been exploited in many practical applications. In this study, using Ag-nanodot-decorated SiO 2 nanoparticles (Ag-decorated SiO 2 NPs) with different solvents, we investigated the potential of using such core-satellite nanostructures as a liquid sensor for the determination of melamine. The dielectric constant effect of the surrounding medium on the LSPR property was given particular attention. It was found that colloids with water as solvent display a LSPR shift of 14nm, and this value was 18nm for ethanol. For colloids with methanol and glycol as solvents, the peak shifts are negligible. Finite-difference time-domain (FDTD) simulations were used to assign the LSPR peaks of Ag-decorated SiO 2 NPs and to monitor the effect of the substrate and solvent on the LSPR properties. In the calculations, the wavelength positions of the LSPR peaks for Ag-decorated SiO 2 NPs in various solvents were successfully predicted in the order methanol

Studies of Radiation-Induced Defects in Li2SiO3:Sm Phosphor Material

NASA Astrophysics Data System (ADS)

Singh, N.; Singh, Vijay; Watanabe, S.; Gundu Rao, T. K.; Chubaci, J. F. D.; Cano, N. F.; Pathak, M. S.; Singh, Pramod K.; Dhoble, S. J.

2017-01-01

Li2SiO3:Sm was synthesized by the solution combustion method. Powder x-ray diffraction technique was used to find the phase formation. Li2SiO3:Sm exhibits thermoluminescence (TL) peaks at approximately 140°C, 155°C, 190°C, 250°C, and 405°C. Three defect centers contribute to the observed electron spin resonance spectrum from the gamma irradiated phosphor. Center I with principal g-values g || = 2.0206 and g ⊥ = 2.0028 is identified as an O2 - ion while center II, with an isotropic g-factor 2.0039, is assigned to an F +-type center. Center III is assigned to a Ti3+ center. The Ti3+ center is related to the 250°C TL peak while the O2 - ion also correlates with the main TL peak at 250°C. An additional defect center is observed during thermal annealing experiments, and the center (assigned to F + center) seems to originate from an F center. The F center appears to be associated with the high temperature TL peak in a Li2SiO3:Sm phosphor. The luminescence spectrum reveals the dominant emission peaks at 605 (4G5/2 → 6H7/2) nm under the excitation wavelength of 402 nm.

Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

PubMed Central

2014-01-01

We report on the out-of-plane thermal conductivities of epitaxial Fe3O4 thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO2/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe3O4 thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe3O4 thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe3O4 films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe3O4 films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices. PMID:24571956

Effects of Impurity Content on the Sintering Characteristics of Plasma-Sprayed Zirconia

NASA Astrophysics Data System (ADS)

Paul, S.; Cipitria, A.; Golosnoy, I. O.; Xie, L.; Dorfman, M. R.; Clyne, T. W.

2007-12-01

Yttria-stabilized zirconia powders, containing different levels of SiO2 and Al2O3, have been plasma sprayed onto metallic substrates. The coatings were detached from their substrates and a dilatometer was used to monitor the dimensional changes they exhibited during prolonged heat treatments. It was found that specimens containing higher levels of silica and alumina exhibited higher rates of linear contraction, in both in-plane and through-thickness directions. The in-plane stiffness and the through-thickness thermal conductivity were also measured after different heat treatments and these were found to increase at a greater rate for specimens with higher impurity (silica and alumina) levels. Changes in the pore architecture during heat treatments were studied using Mercury Intrusion Porosimetry (MIP). Fine scale porosity (< ˜50 nm) was found to be sharply reduced even by relatively short heat treatments. This is correlated with improvements in inter-splat bonding and partial healing of intra-splat microcracks, which are responsible for the observed changes in stiffness and conductivity, as well as the dimensional changes.

Extracting the Density of States of Copper Phthalocyanine at the SiO2 Interface with Electronic Sum Frequency Generation.

PubMed

Pandey, Ravindra; Moon, Aaron P; Bender, Jon A; Roberts, Sean T

2016-03-17

Organic semiconductors (OSCs) constitute an attractive platform for optoelectronics design due to the ease of their processability and chemically tunable properties. Incorporating OSCs into electrical circuits requires forming junctions between them and other materials, yet the change in dielectric properties about these junctions can strongly perturb the electronic structure of the OSC. Here we adapt an interface-selective optical technique, electronic sum frequency generation (ESFG), to the study of a model OSC thin-film system, copper phthalocyanine (CuPc) deposited on SiO2. We find that by modeling the thickness dependence of our measured spectra, we can identify changes in CuPc's electronic density of states at both its buried interface with SiO2 and air-exposed surface. Our work demonstrates that ESFG can be used to noninvasively probe the interfacial electronic structure of optically thick OSC films, indicating that it can be used for the study of OSC-based optoelectronics in situ.

Measuring the complex optical conductivity of graphene by Fabry-Pérot reflectance spectroscopy [Determination of the optical index for few-layer graphene by reflectivity spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghamsari, Behnood G.; Tosado, Jacob; Yamamoto, Mahito

Here, we have experimentally studied the optical refractive index of few-layer graphene through reflection spectroscopy at visible wavelengths. A laser scanning microscope (LSM) with a coherent supercontinuum laser source measured the reflectivity of an exfoliated graphene flake on a Si/SiO 2 substrate, containing monolayer, bilayer and trilayer areas, as the wavelength of the laser was varied from 545nm to 710nm. The complex refractive index of few-layer graphene, n-ik, was extracted from the reflectivity contrast to the bare substrate and the Fresnel reflection theory. Since the SiO 2 thickness enters to the modeling as a parameter, it was precisely measured atmore » the location of the sample. It was found that a common constant optical index cannot explain the wavelength-dependent reflectivity data for single-, double- and three-layer graphene simultaneously, but rather each individual few-layer graphene possesses a unique optical index whose complex values were precisely and accurately determined from the experimental data.« less

Measuring the complex optical conductivity of graphene by Fabry-Pérot reflectance spectroscopy [Determination of the optical index for few-layer graphene by reflectivity spectroscopy

DOE PAGES

Ghamsari, Behnood G.; Tosado, Jacob; Yamamoto, Mahito; ...

2016-09-29

Here, we have experimentally studied the optical refractive index of few-layer graphene through reflection spectroscopy at visible wavelengths. A laser scanning microscope (LSM) with a coherent supercontinuum laser source measured the reflectivity of an exfoliated graphene flake on a Si/SiO 2 substrate, containing monolayer, bilayer and trilayer areas, as the wavelength of the laser was varied from 545nm to 710nm. The complex refractive index of few-layer graphene, n-ik, was extracted from the reflectivity contrast to the bare substrate and the Fresnel reflection theory. Since the SiO 2 thickness enters to the modeling as a parameter, it was precisely measured atmore » the location of the sample. It was found that a common constant optical index cannot explain the wavelength-dependent reflectivity data for single-, double- and three-layer graphene simultaneously, but rather each individual few-layer graphene possesses a unique optical index whose complex values were precisely and accurately determined from the experimental data.« less

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Electronic transport in bismuth selenide in the topological insulator regime

NASA Astrophysics Data System (ADS)

Kim, Dohun

The 3D topological insulators (TIs) have an insulating bulk but spin-momentum coupled metallic surface states stemming from band inversion due to strong spin-orbit interaction, whose existence is guaranteed by the topology of the band structure of the insulator. While the STI surface state has been studied spectroscopically by e.g. photoemission and scanned probes, transport experiments have failed to demonstrate clear signature of the STI due to high level of bulk conduction. In this thesis, I present experimental results on the transport properties of TI material Bi2Se3 in the absence of bulk conduction (TI regime), achieved by applying novel p-type doping methods. Field effect transistors consisting of thin (thickness: 5-17 nm) Bi2Se3 are fabricated by mechanical exfoliation of single crystals, and a combination of conventional dielectric (300 nm thick SiO2) and electrochemical or chemical gating methods are used to move the Fermi energy through the surface Dirac point inside bulk band gap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be 60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se 3, which will have implications for topological electronic devices operating at room temperature. Along with semi-classical Boltzmann transport, I also discuss 2D weak anti-localization (WAL) behavior of the topological surface states. By investigating gate-tuned WAL behavior in thin (5-17 nm) TI films, I show that WAL in the TI regime is extraordinarily sensitive to the hybridization induced quantum mechanical tunneling between top and bottom topological surfaces, and interplay of phase coherence time and inter-surface tunneling time results in a crossover from two decoupled (top and bottom) symplectic 2D metal surfaces to a coherently coupled single channel. Furthermore, a complete suppression of WAL is observed in the 5 nm thick Bi2Se 3 film which was found to occur when the hybridization gap becomes comparable to the disorder strength.

Broadly wavelength tunable acousto-optically Q-switched Tm:Lu2SiO5 laser.

PubMed

Feng, T; Yang, K; Zhao, S; Zhao, J; Qiao, W; Li, T; Zheng, L; Xu, J

2014-09-20

A broadly wavelength tunable acousto-optically Q-switched Tm:Lu2SiO5 (Tm:LSO) laser is presented for the first time, to our best knowledge. The emission wavelength was tuned in a broad spectral region over 111 nm ranging from 1959 to 2070 nm. A shortest pulse duration of 345 ns with beam quality of M(2)≤1.65 was obtained at pulse repetition frequency (PRF) of 1 kHz, corresponding to a maximum single pulse energy of 0.26 mJ and peak power of 0.75 kW. The experimental results indicated that Tm:LSO crystal has outstanding potential for obtaining broadly wavelength tunable and low-PRF laser pulses at 2 μm.

Transmission of ˜ 10 keV electron beams through thin ceramic foils: Measurements and Monte Carlo simulations of electron energy distribution functions

NASA Astrophysics Data System (ADS)

Morozov, A.; Heindl, T.; Skrobol, C.; Wieser, J.; Krücken, R.; Ulrich, A.

2008-07-01

Electron beams with particle energy of ~10 keV were sent through 300 nm thick ceramic (Si3N4 + SiO2) foils and the resulting electron energy distribution functions were recorded using a retarding grid technique. The results are compared with Monte Carlo simulations performed with two publicly available packages, Geant4 and Casino v2.42. It is demonstrated that Geant4, unlike Casino, provides electron energy distribution functions very similar to the experimental distributions. Both simulation packages provide a quite precise average energy of transmitted electrons: we demonstrate that the maximum uncertainty of the calculated values of the average energy is 6% for Geant4 and 8% for Casino, taking into account all systematic uncertainties and the discrepancies in the experimental and simulated data.

Bioconjugated iron oxide nanocubes: synthesis, functionalization, and vectorization.

PubMed

Wortmann, Laura; Ilyas, Shaista; Niznansky, Daniel; Valldor, Martin; Arroub, Karim; Berger, Nadja; Rahme, Kamil; Holmes, Justin; Mathur, Sanjay

2014-10-08

A facile bottom-up approach for the synthesis of inorganic/organic bioconjugated nanoprobes based on iron oxide nanocubes as the core with a nanometric silica shell is demonstrated. Surface coating and functionalization protocols developed in this work offered good control over the shell thickness (8-40 nm) and enabled biovectorization of SiO2@Fe3O4 core-shell structures by covalent attachment of folic acid (FA) as a targeting unit for cellular uptake. The successful immobilization of folic acid was investigated both quantitatively (TGA, EA, XPS) and qualitatively (AT-IR, UV-vis, ζ-potential). Additionally, the magnetic behavior of the nanocomposites was monitored after each functionalization step. Cell viability studies confirmed low cytotoxicity of FA@SiO2@Fe3O4 conjugates, which makes them promising nanoprobes for targeted internalization by cells and their imaging.

Ultrashort hybrid metal-insulator plasmonic directional coupler.

PubMed

Noghani, Mahmoud Talafi; Samiei, Mohammad Hashem Vadjed

2013-11-01

An ultrashort plasmonic directional coupler based on the hybrid metal-insulator slab waveguide is proposed and analyzed at the telecommunication wavelength of 1550 nm. It is first analyzed using the supermode theory based on mode analysis via the transfer matrix method in the interaction region. Then the 2D model of the coupler, including transition arms, is analyzed using a commercial finite-element method simulator. The hybrid slab waveguide is composed of a metallic layer of silver and two dielectric layers of silica (SiO2) and silicon (Si). The coupler is optimized to have a minimum coupling length and to transfer maximum power considering the layer thicknesses as optimization variables. The resulting coupling length in the submicrometer region along with a noticeable power transfer efficiency are advantages of the proposed coupler compared to previously reported plasmonic couplers.

Integrated optical silicon IC compatible nanodevices for biosensing applications

NASA Astrophysics Data System (ADS)

Lechuga, Laura M.; Sepulveda, Borja; Llobera, Andreu; Calle, Ana; Dominguez, Carlos M.

2003-04-01

Biological and chemical sensing is one of the application fields where integrated optical nanodevices can play an important role [1]. We present a Silicon Integrated Mach-Zehnder Interferometer Nanodevice using a Total Internal Refraction waveguide configuration. The induced changes due to a biomolecular interactions in the effective refractive index of the waveguide,is monitored by the measurement of the change in the properties of the propagating light. For using this device as a biosensor, the waveguides of the structure must verify two conditions: work in the monomode regime and to have a Surface Sensivity as high as possible in the sensing arm. The MZI device structure is: (i) a Si wafer with a 500 mm thickness (ii) a 2 mm thick thermal Silicon-Oxide layer with a refractive index of 1.46 (iii) a LPCVD Silicon Nitride layer of 100 nm thickness and a refractive index of 2.00, which is used as the guiding layer. To achieve monomode behavior is needed to define a rib structure, with a depth of only 3 nm, on the Silicon Nitride layer by a lithographic step. This rib structure is performed by RIE and is the most critical step in the microfabrication of the device. Over the structure a protective layer of LPCVD SiO2 is deposited, with a 2 mm thickness and a refractive index of 1.46, which is patterned (photolithography) and etched (RIE) to define the sensing arm. The high sensivity of these devices makes them quite suitable for biosensing applications. For that, without loosing their activity the receptors biomolecules are covanlently immobilized, at nanometer scale , on the sensor area surface. Biospecific molecular recognition takes places when the complementary analyte to the receptor is flowed over the receptor using a flow system. Several biosensing applications have been performed with this device as enviromental pollutant control, immunosensing or genetic detection.

Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

PubMed

Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

2017-08-07

A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

NASA Astrophysics Data System (ADS)

Gao, Dan; Liu, Bo; Xu, Zhen; Wang, Heng; Xia, Yangyang; Wang, Lei; Zhu, Nanfei; Li, Ying; Zhan, Yipeng; Song, Zhitang; Feng, Songlin

2016-10-01

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin ( 4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

Effect of Engineered Nanoparticles on Exopolymeric Substances Release from Marine Phytoplankton

NASA Astrophysics Data System (ADS)

Chiu, Meng-Hsuen; Khan, Zafir A.; Garcia, Santiago G.; Le, Andre D.; Kagiri, Agnes; Ramos, Javier; Tsai, Shih-Ming; Drobenaire, Hunter W.; Santschi, Peter H.; Quigg, Antonietta; Chin, Wei-Chun

2017-12-01

Engineered nanoparticles (ENPs), products from modern nanotechnologies, can potentially impact the marine environment to pose serious threats to marine ecosystems. However, the cellular responses of marine phytoplankton to ENPs are still not well established. Here, we investigate four different diatom species ( Odontella mobiliensis, Skeletonema grethae, Phaeodactylum tricornutum, Thalassiosira pseudonana) and one green algae ( Dunaliella tertiolecta) for their extracellular polymeric substances (EPS) release under model ENP treatments: 25 nm titanium dioxide (TiO2), 10-20 nm silicon dioxide (SiO2), and 15-30 nm cerium dioxide (CeO2). We found SiO2 ENPs can significantly stimulate EPS release from these algae (200-800%), while TiO2 ENP exposure induced the lowest release. Furthermore, the increase of intracellular Ca2+ concentration can be triggered by ENPs, suggesting that the EPS release process is mediated through Ca2+ signal pathways. With better understanding of the cellular mechanism mediated ENP-induced EPS release, potential preventative and safety measures can be developed to mitigate negative impact on the marine ecosystem.

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

Preparation and Characterization of ZnO Nanoparticles Supported on Amorphous SiO2

PubMed Central

Chen, Ying; Ding, Hao; Sun, Sijia

2017-01-01

In order to reduce the primary particle size of zinc oxide (ZnO) and eliminate the agglomeration phenomenon to form a monodisperse state, Zn2+ was loaded on the surface of amorphous silica (SiO2) by the hydrogen bond association between hydroxyl groups in the hydrothermal process. After calcining the precursors, dehydration condensation among hydroxyl groups occurred and ZnO nanoparticles supported on amorphous SiO2 (ZnO–SiO2) were prepared. Furthermore, the SEM and TEM observations showed that ZnO nanoparticles with a particle size of 3–8 nm were uniformly and dispersedly loaded on the surface of amorphous SiO2. Compared with pure ZnO, ZnO–SiO2 showed a much better antibacterial performance in the minimum inhibitory concentration (MIC) test and the antibacterial properties of the paint adding ZnO–SiO2 composite. PMID:28796157

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

PubMed

Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

2014-01-07

Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

Effect of humidity and water intercalation on the tribological behavior of graphene and graphene oxide.

PubMed

Arif, Taib; Colas, Guillaume; Filleter, Tobin

2018-06-12

In this work, the effect of humidity and water intercalation on the friction and wear behavior of few-layers of graphene and graphene oxide (GO) was studied using friction force microscopy. Thickness measurements demonstrated significant water intercalation within GO affecting its surface topography (roughness and protrusions), whereas negligible water intercalation of graphene was observed. It was found that water intercalation in GO contributed to wearing of layers at a relative humidity as low as ~30%. The influence of surface wettability and water adsorption was also studied by comparing the sliding behavior of SiO2/GO, SiO2/Graphene, and SiO2/SiO2 interfaces. Friction for the SiO2/GO interface increased with relative humidity due to water intercalation and condensation of water. In contrast, it was observed that adsorption of water molecules lubricated the SiO2/SiO2 interface due to easy shearing of water on the hydrophobic surface, particularly once the adsorbed water layers had transitioned from "ice-like water" to "liquid-like water" structures. Lastly, an opposite friction trend was observed for the graphene/SiO2 interface with water molecules failing to lubricate the interface as compared to the dry graphene/SiO2 contact.

Electronic sputtering of vitreous SiO2: Experimental and modeling results

NASA Astrophysics Data System (ADS)

Toulemonde, M.; Assmann, W.; Trautmann, C.

2016-07-01

The irradiation of solids with swift heavy ions leads to pronounced surface and bulk effects controlled by the electronic energy loss of the projectiles. In contrast to the formation of ion tracks in bulk materials, the concomitant emission of atoms from the surface is much less investigated. Sputtering experiments with different ions (58Ni, 127I and 197Au) at energies around 1.2 MeV/u were performed on vitreous SiO2 (a-SiO2) in order to quantify the emission rates and compare them with data for crystalline SiO2 quartz. Stoichiometry of the sputtering process was verified by monitoring the thickness decreases of a thin SiO2 film deposited on a Si substrate. Angular distributions of the emitted atoms were measured by collecting sputtered atoms on arc-shaped Cu catcher foils. Subsequent analysis of the number of Si atoms deposited on the catcher foils was quantified by elastic recoil detection analysis providing differential as well as total sputtering yields. Compared to existing data for crystalline SiO2, the total sputtering yields for vitreous SiO2 are by a factor of about five larger. Differences in the sputtering rate and track formation characteristics between amorphous and crystalline SiO2 are discussed within the frame of the inelastic thermal spike model.

A novel approach for the synthesis of ultrathin silica-coated iron oxide nanocubes decorated with silver nanodots (Fe3O4/SiO2/Ag) and their superior catalytic reduction of 4-nitroaniline

NASA Astrophysics Data System (ADS)

Abbas, Mohamed; Torati, Sri Ramulu; Kim, Cheolgi

2015-07-01

A novel sonochemical approach was developed for the synthesis of different core/shell structures of Fe3O4/SiO2/Ag nanocubes and SiO2/Ag nanospheres. The total reaction time of the three sonochemical steps for the synthesis of Fe3O4/SiO2/Ag nanocubes is shorter than that of the previously reported methods. A proposed reaction mechanism for the sonochemical functionalization of the silica and the silver on the surface of magnetic nanocubes was discussed in detail. Transmission electron microscopy revealed that the surface of Fe3O4/SiO2 nanocubes was decorated with small Ag nanoparticles of approximately 10-20 nm in size, and the energy dispersive spectroscopy mapping analysis confirmed the morphology of the structure. Additionally, X-ray diffraction data were used to confirm the formation of both phases of a cubic inverse spinel structure for Fe3O4 and bcc structures for Ag in the core/shell structure of the Fe3O4/SiO2/Ag nanocubes. The as-synthesized Fe3O4/SiO2/Ag nanocubes showed a high efficiency in the catalytic reduction reaction of 4-nitroaniline to 4-phenylenediamine and a better performance than both Ag and SiO2/Ag nanoparticles. The grafted silver catalyst was recycled and reused at least fifteen times without a significant loss of catalytic efficiency.A novel sonochemical approach was developed for the synthesis of different core/shell structures of Fe3O4/SiO2/Ag nanocubes and SiO2/Ag nanospheres. The total reaction time of the three sonochemical steps for the synthesis of Fe3O4/SiO2/Ag nanocubes is shorter than that of the previously reported methods. A proposed reaction mechanism for the sonochemical functionalization of the silica and the silver on the surface of magnetic nanocubes was discussed in detail. Transmission electron microscopy revealed that the surface of Fe3O4/SiO2 nanocubes was decorated with small Ag nanoparticles of approximately 10-20 nm in size, and the energy dispersive spectroscopy mapping analysis confirmed the morphology of the structure. Additionally, X-ray diffraction data were used to confirm the formation of both phases of a cubic inverse spinel structure for Fe3O4 and bcc structures for Ag in the core/shell structure of the Fe3O4/SiO2/Ag nanocubes. The as-synthesized Fe3O4/SiO2/Ag nanocubes showed a high efficiency in the catalytic reduction reaction of 4-nitroaniline to 4-phenylenediamine and a better performance than both Ag and SiO2/Ag nanoparticles. The grafted silver catalyst was recycled and reused at least fifteen times without a significant loss of catalytic efficiency. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02680f

Eruptive history of South Sister, Oregon Cascades

USGS Publications Warehouse

Fierstein, J.; Hildreth, W.; Calvert, A.T.

2011-01-01

South Sister is southernmost and highest of the Three Sisters, three geologically dissimilar stratovolcanoes that together form a spectacular 20km reach along the Cascade crest in Oregon. North Sister is a monotonously mafic edifice as old as middle Pleistocene, Middle Sister a basalt-andesite-dacite cone built between 48 and 14ka, and South Sister is a basalt-free edifice that alternated rhyolitic and intermediate modes from 50ka to 2ka (largely contemporaneous with Middle Sister). Detailed mapping, 330 chemical analyses, and 42 radioisotopic ages show that the oldest exposed South Sister lavas were initially rhyolitic ~50ka. By ~37ka, rhyolitic lava flows and domes (72-74% SiO2) began alternating with radially emplaced dacite (63-68% SiO2) and andesite (59-63% SiO2) lava flows. Construction of a broad cone of silicic andesite-dacite (61-64% SiO2) culminated ~30ka in a dominantly explosive sequence that began with crater-forming andesitic eruptions that left fragmental deposits at least 200m thick. This was followed at ~27ka by growth of a steeply dipping summit cone of agglutinate-dominated andesite (56-60.5% SiO2) and formation of a summit crater ~800m wide. This crater was soon filled and overtopped by a thick dacite lava flow and then by >150m of dacitic pyroclastic ejecta. Small-volume dacite lavas (63-67% SiO2) locally cap the pyroclastic pile. A final sheet of mafic agglutinate (54-56% SiO2) - the most mafic product of South Sister - erupted from and drapes the small (300-m-wide) present-day summit crater, ending a summit-building sequence that lasted until ~22ka. A 20kyr-long-hiatus was broken by rhyolite eruptions that produced (1) the Rock Mesa coulee, tephra, and satellite domelets (73.5% SiO2) and (2) the Devils Chain of ~20 domes and short coulees (72.3-72.8% SiO2) from N-S vent alignments on South Sister's flanks. The compositional reversal from mafic summit agglutinate to recent rhyolites epitomizes the frequently changing compositional modes of the South Sister locus throughout its lifetime. South Sister is part of a reach of the Cascades unusually active in the last 50kyr, characterized by high vent density, N-S vent alignments, and numerous eruptive units of true rhyolite (≥ 72% SiO2) that distinguishes it from much of the Quaternary Cascade arc; these are eruptive expressions of the complex confluence of arc and intraplate magmatic-tectonic regimes.

Eruptive history of South Sister, Oregon Cascades

NASA Astrophysics Data System (ADS)

Fierstein, Judy; Hildreth, Wes; Calvert, Andrew T.

2011-10-01

South Sister is southernmost and highest of the Three Sisters, three geologically dissimilar stratovolcanoes that together form a spectacular 20 km reach along the Cascade crest in Oregon. North Sister is a monotonously mafic edifice as old as middle Pleistocene, Middle Sister a basalt-andesite-dacite cone built between 48 and 14 ka, and South Sister is a basalt-free edifice that alternated rhyolitic and intermediate modes from 50 ka to 2 ka (largely contemporaneous with Middle Sister). Detailed mapping, 330 chemical analyses, and 42 radioisotopic ages show that the oldest exposed South Sister lavas were initially rhyolitic ~ 50 ka. By ~ 37 ka, rhyolitic lava flows and domes (72-74% SiO 2) began alternating with radially emplaced dacite (63-68% SiO 2) and andesite (59-63% SiO 2) lava flows. Construction of a broad cone of silicic andesite-dacite (61-64% SiO 2) culminated ~ 30 ka in a dominantly explosive sequence that began with crater-forming andesitic eruptions that left fragmental deposits at least 200 m thick. This was followed at ~ 27 ka by growth of a steeply dipping summit cone of agglutinate-dominated andesite (56-60.5% SiO 2) and formation of a summit crater ~ 800 m wide. This crater was soon filled and overtopped by a thick dacite lava flow and then by > 150 m of dacitic pyroclastic ejecta. Small-volume dacite lavas (63-67% SiO 2) locally cap the pyroclastic pile. A final sheet of mafic agglutinate (54-56% SiO 2) - the most mafic product of South Sister - erupted from and drapes the small (300-m-wide) present-day summit crater, ending a summit-building sequence that lasted until ~ 22 ka. A 20 kyr-long-hiatus was broken by rhyolite eruptions that produced (1) the Rock Mesa coulee, tephra, and satellite domelets (73.5% SiO 2) and (2) the Devils Chain of ~ 20 domes and short coulees (72.3-72.8% SiO 2) from N-S vent alignments on South Sister's flanks. The compositional reversal from mafic summit agglutinate to recent rhyolites epitomizes the frequently changing compositional modes of the South Sister locus throughout its lifetime. South Sister is part of a reach of the Cascades unusually active in the last 50 kyr, characterized by high vent density, N-S vent alignments, and numerous eruptive units of true rhyolite (≥ 72% SiO 2) that distinguishes it from much of the Quaternary Cascade arc; these are eruptive expressions of the complex confluence of arc and intraplate magmatic-tectonic regimes.

Facile Synthesis of Smart Nanocontainers as Key Components for Construction of Self-Healing Coating with Superhydrophobic Surfaces.

PubMed

Liang, Yi; Wang, MingDong; Wang, Cheng; Feng, Jing; Li, JianSheng; Wang, LianJun; Fu, JiaJun

2016-12-01

SiO2-imidazoline nanocomposites (SiO2-IMI) owning high loading capacity of corrosion inhibitor, 1-hexadecyl-3-methylimidazolium bromide (HMID), and a special acid/alkali dual-stimuli-accelerated release property have been synthesized via a one-step modified Stöber method. SiO2-IMI were uniformly distributed into the hydrophobic SiO2 sol to construct "host"-"guest" feedback active coating with a superhydrophobic surface (SiO2-IMI@SHSC) on aluminium alloy, AA2024, by dip-coating technique. SiO2-IMI as "guest" components have good compatibility with "host" sol-gel coating, and more importantly, once localized corrosion occurs on the surface of AA2024, SiO2-IMI can simultaneously respond to the increase in environmental pH around corrosive micro-cathodic regions and decrease in pH near micro-anodic regions, promptly releasing HMID to form a compact molecular film on the damaged surface, inhibiting corrosion spread and executing a self-healing function. The scanning vibrating electrode technique (SVET) was applied to illustrate the suppression process of cathodic/anodic corrosion activities. Furthermore, benefiting from the superhydrophobic surface, SiO2-IMI@SHSC remained its protective ability after immersion in 0.5 M NaCl solution for 35 days, which is far superior to the conventional sol-gel coating with the same coating thickness. The facile fabrication method of SiO2-IMI simplifies the construction procedure of SiO2-IMI@SHSC, which have great potential to replace non-environmental chromate conversion coatings for practical use.

Molecular architecture: construction of self-assembled organophosphonate duplexes and their electrochemical characterization.

PubMed

Cattani-Scholz, Anna; Liao, Kung-Ching; Bora, Achyut; Pathak, Anshuma; Hundschell, Christian; Nickel, Bert; Schwartz, Jeffrey; Abstreiter, Gerhard; Tornow, Marc

2012-05-22

Self-assembled monolayers of phosphonates (SAMPs) of 11-hydroxyundecylphosphonic acid, 2,6-diphosphonoanthracene, 9,10-diphenyl-2,6-diphosphonoanthracene, and 10,10'-diphosphono-9,9'-bianthracene and a novel self-assembled organophosphonate duplex ensemble were synthesized on nanometer-thick SiO(2)-coated, highly doped silicon electrodes. The duplex ensemble was synthesized by first treating the SAMP prepared from an aromatic diphosphonic acid to form a titanium complex-terminated one; this was followed by addition of a second equivalent of the aromatic diphosphonic acid. SAMP homogeneity, roughness, and thickness were evaluated by AFM; SAMP film thickness and the structural contributions of each unit in the duplex were measured by X-ray reflection (XRR). The duplex was compared with the aliphatic and aromatic monolayer SAMPs to determine the effect of stacking on electrochemical properties; these were measured by impedance spectroscopy using aqueous electrolytes in the frequency range 20 Hz to 100 kHz, and data were analyzed using resistance-capacitance network based equivalent circuits. For the 11-hydroxyundecylphosphonate SAMP, C(SAMP) = 2.6 ± 0.2 μF/cm(2), consistent with its measured layer thickness (ca. 1.1 nm). For the anthracene-based SAMPs, C(SAMP) = 6-10 μF/cm(2), which is attributed primarily to a higher effective dielectric constant for the aromatic moieties (ε = 5-10) compared to the aliphatic one; impedance spectroscopy measured the additional capacitance of the second aromatic monolayer in the duplex (2ndSAMP) to be C(Ti/2ndSAMP) = 6.8 ± 0.7 μF/cm(2), in series with the first.

Surface spins disorder in uncoated and SiO2 coated maghemite nanoparticles

NASA Astrophysics Data System (ADS)

Zeb, F.; Nadeem, K.; Shah, S. Kamran Ali; Kamran, M.; Gul, I. Hussain; Ali, L.

2017-05-01

We studied the surface spins disorder in uncoated and silica (SiO2) coated maghemite (γ-Fe2O3) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO2 coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (TB) for SiO2 coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (Ms) of SiO2 coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO2 coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1- BTb)) was fitted well for both uncoated and SiO2 coated nanoparticles and yields: B =3×10-7 K-b, b=2.22 and B=0.0127 K-b, b=0.57 for uncoated and SiO2 coated nanoparticles, respectively. Higher value of B for SiO2 coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO2 coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO2 coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO2 coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface spins disorder in SiO2 coated nanoparticles than in uncoated γ-Fe2O3 nanoparticles.

Violet-green excitation for NIR luminescence of Yb3+ ions in Bi2O3-B2O3-SiO2-Ga2O3 glasses.

PubMed

Li, Weiwei; Cheng, Jimeng; Zhao, Guoying; Chen, Wei; Hu, Lili; Guzik, Malgorzata; Boulon, Georges

2014-04-21

60Bi(2)O(3)-20B(2)O(3)-10SiO(2)-10Ga(2)O(3) glasses doped with 1-9 mol% Yb(2)O(3) were prepared and investigated mainly on their violet-green excitation for the typical NIR emission of Yb(3+), generally excited in the NIR. Two violet excitation bands at 365 nm and 405 nm are related to Yb(2+) and Bi(3+). 465 nm excitation band and 480 nm absorption band in the blue-green are assigned to Bi(0) metal nanoparticles/grains. Yb-content-dependence of the excitation and absorption means that Bi(0) is the reduced product of Bi(3+), but greatly competed by the redox reaction of Yb(2+) ↔ Yb(3+). It is proved that the violet-green excitations result in the NIR emission of Yb(3+). On the energy transfer, the virtual level of Yb(3+)-Yb(3+) as well as Bi(0) dimers probably plays an important role. An effective and controllable way is suggested to achieve nano-optical applications by Bi(0) metal nanoparticles/grains and Yb(3+).

Detection and Quantification of Silver Nanoparticles at ...

EPA Pesticide Factsheets

The presence of silver nanoparticles (AgNPs) in aquatic environments could potentially cause adverse impacts on ecosystems and human health. However, current understanding of the environmental fate and transport of AgNPs is still limited because their properties in complex environmental samples cannot be accurately determined. In this study, the feasibility of using asymmetric flow field-flow fractionation (AF4) connected online with single particle inductively coupled plasma mass spectrometry (spICPMS) to detect and quantify AgNPs at environmentally relevant concentrations was investigated. The AF4 channel had a thickness of 350 μm and its accumulation wall was a 10 kDa regenerated cellulose membrane. A 0.02% FL-70 surfactant solution was used as an AF4 carrier. With 1.2 mL/min AF4 cross-flow rate, 1.5 mL/min AF4 channel flow rate, and 5 ms spICPMS dwell time, the AF4-spICPMS can detect and quantify 40–80 nm AgNPs, as well as Ag-SiO2 core−shell nanoparticles (51.0 nm diameter Ag core and 21.6 nm SiO2 shell), with good recovery within 30 min. This system was not only effective in differentiating and quantifying different types of AgNPs with similar hydrodynamic diameters, such as in mixtures containing Ag-SiO2 core–shell nanoparticles and 40–80 nm AgNPs, but also suitable for differentiating between 40 nm AgNPs and elevated Ag+ content. The study results indicate that AF4-spICPMS is capable of detecting and quantifying AgNPs and other engineered metal n

Fluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics

PubMed Central

Ho, Kuan-I; Huang, Chi-Hsien; Liao, Jia-Hong; Zhang, Wenjing; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

2014-01-01

There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C. The measured breakdown electric field is higher than 10 MV cm−1, which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm2/Vs, higher than that obtained when SiO2 and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices. PMID:25081226

Low cost, patterning of human hNT brain cells on parylene-C with UV & IR laser machining.

PubMed

Raos, Brad J; Unsworth, C P; Costa, J L; Rohde, C A; Doyle, C S; Delivopoulos, E; Murray, A F; Dickinson, M E; Simpson, M C; Graham, E S; Bunting, A S

2013-01-01

This paper describes the use of 800nm femtosecond infrared (IR) and 248nm nanosecond ultraviolet (UV) laser radiation in performing ablative micromachining of parylene-C on SiO2 substrates for the patterning of human hNT astrocytes. Results are presented that support the validity of using IR laser ablative micromachining for patterning human hNT astrocytes cells while UV laser radiation produces photo-oxidation of the parylene-C and destroys cell patterning. The findings demonstrate how IR laser ablative micromachining of parylene-C on SiO2 substrates can offer a low cost, accessible alternative for rapid prototyping, high yield cell patterning.

Size-Selective Synthesis and Stabilization of Small Silver Nanoparticles on TiO 2 Partially Masked by SiO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bo, Zhenyu; Eaton, Todd R.; Gallagher, James R.

Controlling metal nanoparticle size is one of the principle challenges in developing new supported catalysts. Typical methods where a metal salt is deposited and reduced can result in a polydisperse mixture of metal nanoparticles, especially at higher loading. Polydispersity can exacerbate the already significant challenge of controlling sintering at high temperatures, which decreases catalytic surface area. Here, we demonstrate the size-selective photoreduction of Ag nanoparticles on TiO2 whose surface has been partially masked with a thin SiO2 layer. To synthesize this layered oxide material, TiO2 particles are grafted with tert-butylcalix[4]arene molecular templates (~2 nm in diameter) at surface densities ofmore » 0.05–0.17 templates.nm–2, overcoated with ~2 nm of SiO2 through repeated condensation cycles of limiting amounts of tetraethoxysilane (TEOS), and the templates are removed oxidatively. Ag photodeposition results in uniform nanoparticle diameters ≤ 3.5 nm (by transmission electron microscopy (TEM)) on the partially masked TiO2, whereas Ag nanoparticles deposited on the unmodified TiO2 are larger and more polydisperse (4.7 ± 2.7 nm by TEM). Furthermore, Ag nanoparticles on the partially masked TiO2 do not sinter after heating at 450 °C for 3 h, while nanoparticles on the control surfaces sinter and grow by at least 30%, as is typical. Overall, this new synthesis approach controls metal nanoparticle dispersion and enhances thermal stability, and this facile synthesis procedure is generalizable to other TiO2-supported nanoparticles and sizes and may find use in the synthesis of new catalytic materials.« less

Synthesis, characterization and evaluation of uniformly sized core-shell imprinted microspheres for the separation trans-resveratrol from giant knotweed

NASA Astrophysics Data System (ADS)

Zhang, Zhaohui; Liu, Li; Li, Hui; Yao, Shouzhuo

2009-09-01

A novel core-shell molecularly imprinting microspheres (MIMs) with trans-resveratrol as the template molecule; acrylamide (AA) as functional monomer and ethylene glycol dimethacrylate (EGDMA) as cross-linker, was prepared based on SiO 2 microspheres with surface imprinting technique. These core-shell trans-resveratrol imprinted microspheres were characterized by infrared spectra (IR), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), and high performance liquid chromatography (HPLC). The results showed that these core-shell imprinted microspheres, which take on perfect spherical shape with average shell thickness of 150 nm, exhibit especially selective recognition for trans-resveratrol. These imprinted microspheres were applied as solid-phase extraction materials for selective extraction of trans-resveratrol from giant knotweed extracting solution successfully.

In situ monitoring of electrical resistance during deposition of Ag and Al thin films by pulsed laser deposition: Comparative study

NASA Astrophysics Data System (ADS)

Abdellaoui, N.; Pereira, A.; Novotny, M.; Bulir, J.; Fitl, P.; Lancok, J.; Moine, B.; Pillonnet, A.

2017-10-01

In this study, the growth by pulsed laser deposition of thin films of nanometer thickness as well as clusters is presented. Two kinds of metals, namely Ag and Al, are investigated because of their different growth processes on SiO2. We show that by tuning the deposition rate and the background atmosphere, it is easily possible to obtain Ag clusters that exhibit plasmonic resonances at wavelengths shorter than 500 nm. It is further demonstrated that Al tends to perfectly wet the substrate when deposited under vacuum or gas pressure. In situ electrical resistance measurements are used to follow the growth during deposition, and conventional analysis techniques (AFM, SEM, absorption and ellipsometry spectroscopy) are used to control their properties.

SiO2 and TiO2 nanoparticles synergistically trigger macrophage inflammatory responses.

PubMed

Tsugita, Misato; Morimoto, Nobuyuki; Nakayama, Masafumi

2017-04-11

Silicon dioxide (SiO 2 ) nanoparticles (NPs) and titanium dioxide (TiO 2 ) NPs are the most widely used inorganic nanomaterials. Although the individual toxicities of SiO 2 and TiO 2 NPs have been extensively studied, the combined toxicity of these NPs is much less understood. In this study, we observed unexpected and drastic activation of the caspase-1 inflammasome and production of IL-1β in mouse bone marrow-derived macrophages stimulated simultaneously with SiO 2 and TiO 2 NPs at concentrations at which these NPs individually do not cause macrophage activation. Consistent with this, marked lung inflammation was observed in mice treated intratracheally with both SiO 2 and TiO 2 NPs. In macrophages, SiO 2 NPs localized in lysosomes and TiO 2 NPs did not; while only TiO 2 NPs produced ROS, suggesting that these NPs induce distinct cellular damage leading to caspase-1 inflammasome activation. Intriguingly, dynamic light scattering measurements revealed that, although individual SiO 2 and TiO 2 NPs immediately aggregated to be micrometer size, the mixture of these NPs formed a stable and relatively monodisperse complex with a size of ~250 nm in the presence of divalent cations. Taken together, these results suggest that SiO 2 and TiO 2 NPs synergistically induce macrophage inflammatory responses and subsequent lung inflammation. Thus, we propose that it is important to assess the synergistic toxicity of various combinations of nanomaterials.

Synthesis of suitable SiO2 nano particles as the core in core-shell nanostructured materials.

PubMed

Ghahari, Mehdi; Aghababazadeh, Roya; Ebadzadeh, Touradj; Mirhabibi, Alireza; Brydson, Rik; Fabbri, Paola; Najafi, Farhod

2011-06-01

The effect of surfactant on the luminescent intensity of SiO2 @Y2O3:Eu3+ particles with a core shell structure is described. Core-shell particles are used in phosphor materials and employing spherical particles with a narrow size distribution is vital for the enhancement of luminescent properties. Three kinds of different surfactants were used to synthesis SiO2 nano particles via a sol gel process. The results demonstrated that comb polycarboxylic acid surfactant had a significant influence on the morphology and particle size distribution. Somehow, particles with 100 nm size and narrow size distribution were produced. These particles had relatively uniform packing, unlike particles produced with other surfactants or without surfactant which had irregular assembly. The photoluminescence intensity of SiO2 @Y2O3:Eu3+ particles that was synthesized by comb polycarboxylic acid surfactant was higher than those which were produced without surfactant.

Pattern Classification with Memristive Crossbar Circuits

DTIC Science & Technology

2016-03-31

Fig. 2a), with a Pt/Al2O3/ TiO2 -x/Ti/Pt memristor at each crosspoint, was fabricated using a standard lift-off patterning. The Al2O3/ TiO2 -x stack...Form SiO2/Si Pt (60 nm) TiO2 -x (30 nm) Ti (15 nm) Al2O3 (4 nm) Ta (5 nm) Pt (60 nm) VW- VR VW+ Voltage (V) -2.0 -1.5 -1.0 -0.5 0.0 0.5...circuit with integrated Al2O3/ TiO2 -x resistive switching devices: (a) micrograph of a 12×12-crosspoint crossbar; (b) typical quasi-dc I-V curves of

SiO2 nanoparticle-induced impairment of mitochondrial energy metabolism in hepatocytes directly and through a Kupffer cell-mediated pathway in vitro

PubMed Central

Xue, Yang; Chen, Qingqing; Ding, Tingting; Sun, Jiao

2014-01-01

The liver has been shown to be a primary target organ for SiO2 nanoparticles in vivo, and may be highly susceptible to damage by these nanoparticles. However, until now, research focusing on the potential toxic effects of SiO2 nanoparticles on mitochondria-associated energy metabolism in hepatocytes has been lacking. In this work, SiO2 nanoparticles 20 nm in diameter were evaluated for their ability to induce dysfunction of mitochondrial energy metabolism. First, a buffalo rat liver (BRL) cell line was directly exposed to SiO2 nanoparticles, which induced cytotoxicity and mitochondrial damage accompanied by decreases in mitochondrial dehydrogenase activity, mitochondrial membrane potential, enzymatic expression in the Krebs cycle, and activity of the mitochondrial respiratory chain complexes I, III and IV. Second, the role of rat-derived Kupffer cells was evaluated. The supernatants from Kupffer cells treated with SiO2 nanoparticles were transferred to stimulate BRL cells. We observed that SiO2 nanoparticles had the ability to activate Kupffer cells, leading to release of tumor necrosis factor-α, nitric oxide, and reactive oxygen species from these cells and subsequently to inhibition of mitochondrial respiratory chain complex I activity in BRL cells. PMID:24959077

Size characterization of airborne SiO2 nanoparticles with on-line and off-line measurement techniques: an interlaboratory comparison study

NASA Astrophysics Data System (ADS)

Motzkus, C.; Macé, T.; Gaie-Levrel, F.; Ducourtieux, S.; Delvallee, A.; Dirscherl, K.; Hodoroaba, V.-D.; Popov, I.; Popov, O.; Kuselman, I.; Takahata, K.; Ehara, K.; Ausset, P.; Maillé, M.; Michielsen, N.; Bondiguel, S.; Gensdarmes, F.; Morawska, L.; Johnson, G. R.; Faghihi, E. M.; Kim, C. S.; Kim, Y. H.; Chu, M. C.; Guardado, J. A.; Salas, A.; Capannelli, G.; Costa, C.; Bostrom, T.; Jämting, Å. K.; Lawn, M. A.; Adlem, L.; Vaslin-Reimann, S.

2013-10-01

Results of an interlaboratory comparison on size characterization of SiO2 airborne nanoparticles using on-line and off-line measurement techniques are discussed. This study was performed in the framework of Technical Working Area (TWA) 34—"Properties of Nanoparticle Populations" of the Versailles Project on Advanced Materials and Standards (VAMAS) in the project no. 3 "Techniques for characterizing size distribution of airborne nanoparticles". Two types of nano-aerosols, consisting of (1) one population of nanoparticles with a mean diameter between 30.3 and 39.0 nm and (2) two populations of non-agglomerated nanoparticles with mean diameters between, respectively, 36.2-46.6 nm and 80.2-89.8 nm, were generated for characterization measurements. Scanning mobility particle size spectrometers (SMPS) were used for on-line measurements of size distributions of the produced nano-aerosols. Transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were used as off-line measurement techniques for nanoparticles characterization. Samples were deposited on appropriate supports such as grids, filters, and mica plates by electrostatic precipitation and a filtration technique using SMPS controlled generation upstream. The results of the main size distribution parameters (mean and mode diameters), obtained from several laboratories, were compared based on metrological approaches including metrological traceability, calibration, and evaluation of the measurement uncertainty. Internationally harmonized measurement procedures for airborne SiO2 nanoparticles characterization are proposed.

Luminescence and energy transfer of Tb3+-doped BaO-Gd2O3-Al2O3-B2O3-SiO2 glasses.

PubMed

Zuo, Chenggang; Huang, Jinze; Liu, Shaoyou; Xiao, Anguo; Shen, Youming; Zhang, Xiangyang; Zhou, Zhihua; Zhu, Ligang

2017-12-05

Transparent Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses with the greater than 4g/cm 3 were prepared by high temperature melting method and its luminescent properties have been investigated by measured UV-vis transmission, excitation, emission and luminescence decay spectra. The transmission spectrum shows there are three weak absorption bands locate at about 312, 378 and 484nm in the glasses and it has good transmittance in the visible spectrum region. Intense green emission can be observed under UV excitation. The effective energy transfer from Gd 3+ ion to Tb 3+ ion could occur and sensitize the luminescence of Tb 3+ ion. The green emission intensity of Tb 3+ ion could change with the increasing SiO 2 /B 2 O 3 ratio in the borosilicate glass matrix. With the increasing concentration of Tb 3+ ion, 5 D 4 → 7 F J transitions could be enhanced through the cross relaxation between the two nearby Tb 3+ ions. Luminescence decay time of 2.12ms from 546nm emission is obtained. The results indicate that Tb 3+ -doped BaO-Gd 2 O 3 -Al 2 O 3 -B 2 O 3 -SiO 2 glasses would be potential scintillating material for applications in X-ray imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

High sensitivity flat SiO2 fibres for medical dosimetry

NASA Astrophysics Data System (ADS)

Abdul Sani, Siti. F.; Alalawi, Amani I.; Azhar, Hairul A. R.; Amouzad Mahdiraji, Ghafour; Tamchek, Nizam; Nisbet, A.; Maah, M. J.; Bradley, D. A.

2014-11-01

We describe investigation of a novel undoped flat fibre fabricated for medical radiation dosimetry. Using high energy X-ray beams generated at a potential of 6 MV, comparison has been made of the TL yield of silica flat fibres, TLD-100 chips and Ge-doped silica fibres. The flat fibres provide competitive TL yield to that of TLD-100 chips, being some 100 times that of the Ge-doped fibres. Pt-coated flat fibres have then been used to increase photoelectron production and hence local dose deposition, obtaining significant increase in dose sensitivity over that of undoped flat fibres. Using 250 kVp X-ray beams, the TL yield reveals a progressive linear increase in dose for Pt thicknesses from 20 nm up to 80 nm. The dose enhancement factor (DEF) of (0.0150±0.0003) nm-1 Pt is comparable to that obtained using gold, agreeing at the 1% level with the value expected on the basis of photoelectron generation. Finally, X-ray photoelectron spectroscopy (XPS) has been employed to characterize the surface oxidation state of the fibre medium. The charge state of Si2p was found to lie on 103.86 eV of binding energy and the atomic percentage obtained from the XPS analysis is 22.41%.

Roughness evolution in dewetted Ag and Pt nanoscale films

NASA Astrophysics Data System (ADS)

Ruffino, F.; Grimaldi, M. G.

2018-01-01

The surface roughness of nanoscale metal systems plays a key role in determining the systems properties and, therefore, the electrical, optical, etc. response of nanodevices based on them. In this work, we experimentally analyze the roughness evolution in dewetting Ag and Pt films deposited on SiO2 substrate. In particular, after depositing 15 nm-thick Ag or Pt films on the SiO2 substrate, standard annealing processes were performed below the melting temperatures of the metals so to induce the solid-state dewetting of the films. The surface morphology evolution of the Ag and Pt films was studied by means of Atomic Force Microscopy analysis as a function of the annealing temperature T and of the annealing time t. In particular, these analysis allowed to quantify the roughness σ of the Ag and Pt films versus the annealing temperature T and the annealing time t. The analysis of these plots allowed us to draw combined insights on the dewetting process characteristics, on the dewetting-induced roughening properties, and on the material-dependent parameters by the comparison of the results obtained for the Ag film and the Pt film. These analysis, in addition, open perspectives towards the development of a method to produce supported metal films with controlled surface roughness for designed applications.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Model Forecast Skill and Sensitivity to Initial Conditions in the Seasonal Sea Ice Outlook

NASA Technical Reports Server (NTRS)

Blanchard-Wrigglesworth, E.; Cullather, R. I.; Wang, W.; Zhang, J.; Bitz, C. M.

2015-01-01

We explore the skill of predictions of September Arctic sea ice extent from dynamical models participating in the Sea Ice Outlook (SIO). Forecasts submitted in August, at roughly 2 month lead times, are skillful. However, skill is lower in forecasts submitted to SIO, which began in 2008, than in hindcasts (retrospective forecasts) of the last few decades. The multimodel mean SIO predictions offer slightly higher skill than the single-model SIO predictions, but neither beats a damped persistence forecast at longer than 2 month lead times. The models are largely unsuccessful at predicting each other, indicating a large difference in model physics and/or initial conditions. Motivated by this, we perform an initial condition sensitivity experiment with four SIO models, applying a fixed -1 m perturbation to the initial sea ice thickness. The significant range of the response among the models suggests that different model physics make a significant contribution to forecast uncertainty.

X-ray absorption fine structure and x-ray diffraction studies of crystallographic grains in nanocrystalline FePd:Cu thin films

NASA Astrophysics Data System (ADS)

Krupinski, M.; Perzanowski, M.; Polit, A.; Zabila, Y.; Zarzycki, A.; Dobrowolska, A.; Marszalek, M.

2011-03-01

FePd alloys have recently attracted considerable attention as candidates for ultrahigh density magnetic storage media. In this paper we investigate FePd thin alloy film with a copper admixture composed of nanometer-sized grains. [Fe(0.9 nm)/Pd(1.1 nm)/Cu(d nm)]×5 multilayers were prepared by thermal deposition at room temperature in UHV conditions on Si(100) substrates covered by 100 nm SiO2. The thickness of the copper layer has been changed from 0 to 0.4 nm. After deposition, the multilayers were rapidly annealed at 600 °C in a nitrogen atmosphere, which resulted in the creation of the FePd:Cu alloy. The structure of alloy films obtained this way was determined by x-ray diffraction (XRD), glancing angle x-ray diffraction, and x-ray absorption fine structure (EXAFS). The measurements clearly showed that the L10 FePd:Cu nanocrystalline phase has been formed during the annealing process for all investigated copper compositions. This paper concentrates on the crystallographic grain features of FePd:Cu alloys and illustrates that the EXAFS technique, supported by XRD measurements, can help to extend the information about grain size and grain shape of poorly crystallized materials. We show that, using an appropriate model of the FePd:Cu grains, the comparison of EXAFS and XRD results gives a reasonable agreement.

An investigation on magnetic responses in Ag-SiO2-Ag nanosandwich structures

NASA Astrophysics Data System (ADS)

Jen, Yi-Jun; Jhou, Jheng-Jie; Yu, Ching-Wei

2011-10-01

In this work, we investigate magnetic responses in various Ag-SiO2-Ag nanosandwich structures at visible wavelengths. The two electric resonant modes corresponding to the in-phase (symmetric) and anti-phase (asymmetric) electric dipole on the top and the bottom nanopillars are observed by the finite difference time domain (FDTD) simulation. In the asymmetric resonant mode, the phases of electric fields oscillating in the top and bottom pillars have opposite directions, leading to a virtual current loop that induces the magnetic field reversal. The nanosandwich structure produces a large enhancement of the magnetic field as the thickness of SiO2 nanopillar is much smaller than wavelength. By increasing the diameter of nanopillars from 150 nm to 250 nm, the inverse magnetic response wavelength shifts from 532 nm to 690 nm. On account of the magnetic field reversal caused by the anti-phase electric dipole coupling, the real part of the equivalent permeability of the film is negative. Therefore, the wavelength range associated with the intensity of inverse magnetic response is tunable by varying the size of Ag-SiO2-Ag nanosandwich structure. The equivalent electromagnetic parameters of the Ag-SiO2-Ag nanosandwich thin film prepared by glancing angle deposition are derived from the transmission and the reflection coefficients measured by walk-off interferometers. The measured results indicate that film exhibit double negative properties and lead to negative values of the real parts of equivalent refractive indices -0.854, -1.179, and -1.492 for λ = 532 nm, 639 nm, and 690 nm, respectively. Furthermore, the real part of permeability is negatively enhanced to be -4.771 and the maximum value of figures of merit (FOM) recorded being 6.543 for p-polarized light at λ = 690 nm. Finally, we analyze the admittance loci for our nanosandwich thin film. This analysis can be applied to interpret extraordinary optical properties such as negative index of refraction from Ag-SiO2-Ag nanosandwich films.

Structure and corrosion behavior of sputter deposited cerium oxide based coatings with various thickness on Al 2024-T3 alloy substrates

NASA Astrophysics Data System (ADS)

Liu, Yuanyuan; Huang, Jiamu; Claypool, James B.; Castano, Carlos E.; O'Keefe, Matthew J.

2015-11-01

Cerium oxide based coatings from ∼100 to ∼1400 nm in thickness were deposited onto Al 2024-T3 alloy substrates by magnetron sputtering of a 99.99% pure CeO2 target. The crystallite size of CeO2 coatings increased from 15 nm to 46 nm as the coating thickness increased from ∼100 nm to ∼1400 nm. The inhomogeneous lattice strain increased from 0.36% to 0.91% for the ∼100 nm to ∼900 nm thick coatings and slightly decreased to 0.89% for the ∼1400 nm thick coating. The highest adhesion strength to Al alloy substrates was for the ∼210 nm thick coating, due to a continuous film coverage and low internal stress. Electrochemical measurements indicated that sputter deposited crystalline CeO2 coatings acted as physical barriers that provide good cathodic inhibition for Al alloys in saline solution. The ∼900 nm thick CeO2 coated sample had the best corrosion performance that increased the corrosion resistance by two orders magnitude and lowered the cathodic current density 30 times compared to bare Al 2024-T3 substrates. The reduced defects and exposed surface, along with suppressed charge mobility, likely accounts for the improved corrosion performance as coating thickness increased from ∼100 nm to ∼900 nm. The corrosion performance decreased for ∼1400 nm thick coatings due in part to an increase in coating defects and porosity along with a decrease in adhesion strength.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Megalini, Ludovico; Cabinian, Brian C.; Zhao, Hongwei; Oakley, Douglas C.; Bowers, John E.; Klamkin, Jonathan

2018-02-01

We employ a simple two-step growth technique to grow large-area 1550-nm laser structures by direct hetero-epitaxy of III-V compounds on patterned exact-oriented (001) silicon (Si) substrates by metal organic chemical vapor deposition. Densely-packed, highly uniform, flat and millimeter-long indium phosphide (InP) nanowires were grown from Si v-grooves separated by silicon dioxide (SiO2) stripes with various widths and pitches. Following removal of the SiO2 patterns, the InP nanowires were coalesced and, subsequently, 1550-nm laser structures were grown in a single overgrowth without performing any polishing for planarization. X-ray diffraction, photoluminescence, atomic force microscopy and transmission electron microscopy analyses were used to characterize the epitaxial material. PIN diodes were fabricated and diode-rectifying behavior was observed.

Photocleavable Hydrogel-Coated Upconverting Nanoparticles: A Multifunctional Theranostic Platform for NIR Imaging and On-Demand Macromolecular Delivery.

PubMed

Jalani, Ghulam; Naccache, Rafik; Rosenzweig, Derek H; Haglund, Lisbet; Vetrone, Fiorenzo; Cerruti, Marta

2016-01-27

Lanthanide-doped upconverting nanoparticles (UCNPs) have emerged as excellent nanotransducers for converting longer wavelength near-infrared (NIR) light to shorter wavelengths spanning the ultraviolet (UV) to the visible (Vis) regions of the spectrum via a multiphoton absorption process, known as upconversion. Here, we report the development of NIR to UV-Vis-NIR UCNPs consisting of LiYF4:Yb(3+)/Tm(3+)@SiO2 individually coated with a 10 ± 2 nm layer of chitosan (CH) hydrogel cross-linked with a photocleavable cross-linker (PhL). We encapsulated fluorescent-bovine serum albumin (FITC-BSA) inside the gel. Under 980 nm excitation, the upconverted UV emission cleaves the PhL cross-links and instantaneously liberates the FITC-BSA under 2 cm thick tissue. The release is immediately arrested if the excitation source is switched off. The upconverted NIR light allows for the tracking of particles under the tissue. Nucleus pulposus (NP) cells cultured with UCNPs are viable both in the presence and in the absence of laser irradiation. Controlled drug delivery of large biomolecules and deep tissue imaging make this system an excellent theranostic platform for tissue engineering, biomapping, and cellular imaging applications.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

NASA Astrophysics Data System (ADS)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Polarized electronic absorption spectra of Cr2SiO4 single crystals

NASA Astrophysics Data System (ADS)

Furche, A.; Langer, K.

Polarized electronic absorption spectra, E∥a(∥X), E∥b(∥Y) and E∥c(∥Z), in the energy range 3000-5000 cm-1 were obtained for the orthorhombic thenardite-type phase Cr2SiO4, unique in its Cr2+-allocation suggesting some metal-metal bonding in Cr2+Cr2+ pairs with Cr-Cr distance 2.75 Å along [001]. The spectra were scanned at 273 and 120 K on single crystal platelets ∥(100), containing optical Y and Z, and ∥(010), containing optical X and Z, with thicknesses 12.3 and 15.6 μm, respectively. Microscope-spectrometric techniques with a spatial resolution of 20 μm and 1 nm spectral resolution were used. The orientations were obtained by means of X-ray precession photographs. The xenomorphic, strongly pleochroic crystal fragments (X deeply greenish-blue, Y faint blue almost colourless, Z deeply purple almost opaque) were extracted from polycrystalline Cr2SiO4, synthesized at 35 kbar, above 1440 °C from high purity Cr2O3, Cr (10% excess) and SiO2 in chromium capsules. The Cr2SiO4-phase was identified by X-ray diffraction (XRD). Four strongly polarized bands, at about 13500 (I), 15700 (II), 18700 (III) and 19700 (IV) cm-1, in the absorption spectra of Cr2SiO4 single crystals show properties (temperature behaviour of linear and integral absorption coefficients, polarization behaviour, molar absorptivities) which are compatible with an assignment to localized spin-allowed transitions of Cr2+ in a distorted square planar coordination of point symmetry C2. The crystal field parameter of Cr2+ is estimated to be 10 Dq =10700 cm-1. A relatively intense, sharp band at 18400 cm-1 and three other minor features can, from their small half widths, be assigned to spin-forbidden dd-transitions of Cr2+. The intensity of such bands strongly decreases on decreasing temperature. The large half widths, near 5000 cm-1 of band III are indicative of some Cr-Cr interactions, i.e. δ-δ* transitions of Cr24+, whereas the latter alone would be in conflict with the strong polarization of bands I and II parallel [100]. Therefore, it is concluded that the spectra obtained can best be interpreted assuming both dd-transitions of localized d-electrons at Cr2+ as well as δ-δ* transitions of Cr24+ pairs with metal-metal interaction. To explain this, a dynamic exchange process 2 Crloc2+⇔Cr2, cpl4+ is suggested wherein the half life times of the ground states of both exchanging species are significantly longer than those of the respective optically excited states, such that the spectra show both dd- and δ-δ*-transitions.

Improving antiproliferative effect of the anticancer drug cytarabine on human promyelocytic leukemia cells by coating on Fe3O4@SiO2 nanoparticles.

PubMed

Shahabadi, Nahid; Falsafi, Monireh; Mansouri, Kamran

2016-05-01

In this study, Fe3O4@SiO2-cytarabine magnetic nanoparticles (MNPs) were prepared via chemical coprecipitation reaction and coating silica on the surface of Fe3O4 MNPs by Stöber method via sol-gel process. The surface of Fe3O4@SiO2 MNPs was modified by an anticancer drug, cytarabine. The structural properties of the samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Zetasizer analyzer, and transmission electron microscopy (TEM). The results indicated that the crystalline phase of iron oxide NPs was magnetite (Fe3O4) and the average sizes of Fe3O4@SiO2-cytarabine MNPs were about 23 nm. Also, the surface characterization of Fe3O4@SiO2-cytarabine MNPs by FT-IR showed that successful coating of Fe3O4 NPs with SiO2 and binding of cytarabine drug onto the surface of Fe3O4@SiO2 MNPs were through the hydroxyl groups of the drug. The in vitro cytotoxic activity of Fe3O4@SiO2-cytarabine MNPs was investigated against cancer cell line (HL60) in comparison with cytarabine using MTT colorimetric assay. The obtained results showed that the effect of Fe3O4@SiO2-cytarabine magnetic nanoparticles on the cell lines were about two orders of magnitude higher than that of cytarabine. Furthermore, in vitro DNA binding studies were investigated by UV-vis, circular dichroism, and fluorescence spectroscopy. The results for DNA binding illustrated that DNA aggregated on Fe3O4@SiO2-cytarabine MNPs via groove binding. Copyright © 2016 Elsevier B.V. All rights reserved.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Optical characteristics of sol-gel derived M3SiO5:Eu3+ (M = Sr, Ca and Mg) nanophosphors for display device technology

NASA Astrophysics Data System (ADS)

Singh, Devender; Sheoran, Suman; Bhagwan, Shri; Kadyan, Sonika

2016-12-01

A series of trivalent europium-doped M3SiO5 (M = Sr, Ca and Mg) phosphors were synthesized using sol-gel process at 950°C. Samples were further reheated at high temperature to study the effect of reheating on crystal structure and optical characteristics. X-ray diffraction measurement of these materials was carried out to know the crystal structure. Diffraction pattern showed monoclinic structure having space group Cm for Ca3SiO5 materials. However, tetragonal phase with space group P4/ncc was observed for Sr3SiO5 materials. Mg3SiO5 material show mixed diffraction peaks at 950 and 1,150°C. Transmission electron microscopic analysis was used to estimate the particle size of silicates. Photoluminescence emission spectra were recorded to check the luminescence properties of prepared materials. These phosphors exhibited a strong orange-red light under excitation at 395 nm. The prepared phosphors exhibited most intense peak in 610-620 nm region due to the 5D0→7F2 transition of europium (III) ion available in lattice. To overcome the deficiency of red silicates, M3SiO5 materials were explored and they might be integrated with ultraviolet LEDs to generate light which may be suitable for display applications.

Highly Luminescent Hybrid SiO2-Coated CdTe Quantum Dots Retained Initial Photoluminescence Efficiency in Sol-Gel SiO2 Film.

PubMed

Sun, Hongsheng; Xing, Yugui; Wu, Qinan; Yang, Ping

2015-02-01

A highly luminescent silica film was fabricated using tetraethyl orthosilicate (TEOS) and 3-aminopropyltrimethoxysilane (APS) through a controlled sol-gel reaction. The pre-hydrolysis of TEOS and APS which resulted in the mixture of TEOS and APS in a molecular level is a key for the formation of homogenous films. The aminopropyl groups in APS play an important role for obtaining homogeneous film with high photoluminescence (PL). Red-emitting hybrid SiO2-coated CdTe nano-crystals (NCs) were fabricated by a two-step synthesis including a thin SiO2 coating via a sol-gel process and a subsequent refluxing using green-emitting CdTe NCs. The hybrid SiO2-coated CdTe NCs were embedded in a functional SiO2 film via a two-step process including adding the NCs in SiO2 sol with a high viscosity and almost without ethanol and a subsequent spinning coating. The hybrid SiO2-coated CdTe NCs retained their initial PL efficiency (54%) in the film. Being encapsulated with the hybrid NCs in the film, no change on the absorption and PL spectra of red-emitting CdTe NCs (632 nm) was observed. This indicates the hybrid NCs is stable enough during preparation. This phenomenon is ascribed to the controlled sol-gel process and a hybrid SiO2 shell on CdTe NCs. Because these films exhibited high PL efficiency and stability, they will be utilizable for potential applications in many fields.

Preparation and characterization of silane-modified SiO2 particles reinforced resin composites with fluorinated acrylate polymer.

PubMed

Liu, Xue; Wang, Zengyao; Zhao, Chengji; Bu, Wenhuan; Na, Hui

2018-04-01

A series of fluorinated dental resin composites were prepared with two kinds of SiO 2 particles. Bis-GMA (bisphenol A-glycerolate dimethacrylate)/4-TF-PQEA (fluorinated acrylate monomer)/TEGDMA (triethylene glycol dimethacrylate) (40/30/30, wt/wt/wt) was introduced as resin matrix. SiO 2 nanopartices (30nm) and SiO 2 microparticles (0.3µm) were silanized with 3-methacryloxypropyl trimethoxysilane (γ-MPS) and used as fillers. After mixing the resin matrix with 0%, 10%, 20%, 30% SiO 2 nanopartices and 0%, 10%, 20%, 30%, 40%, 50% SiO 2 microparticles, respectively, the fluorinated resin composites were obtained. Properties including double bond conversion (DC), polymerization shrinkage (PS), water sorption (W p ), water solubility (W y ), mechanical properties and cytotoxicity were investigated in comparison with those of neat resin system. The results showed that, filler particles could improve the overall performance of resin composites, particularly in improving mechanical properties and reducing PS of composites along with the addition of filler loading. Compared to resin composites containing SiO 2 microparticles, SiO 2 nanoparticles resin composites had higher DC, higher mechanical properties, lower PS and lower W p under the same filler content. Especially, 50% SiO 2 microparticles reinforced resins exhibited the best flexural strength (104.04 ± 7.40MPa), flexural modulus (5.62 ± 0.16GPa), vickers microhardness (37.34 ± 1.13 HV), compressive strength (301.54 ± 5.66MPa) and the lowest polymerization (3.42 ± 0.22%). Copyright © 2018 Elsevier Ltd. All rights reserved.

Transport and abatement of fluorescent silica nanoparticle (SiO2 NP) in granular filtration: effect of porous media and ionic strength

NASA Astrophysics Data System (ADS)

Zeng, Chao; Shadman, Farhang; Sierra-Alvarez, Reyes

2017-03-01

The extensive production and application of engineered silica nanoparticles (SiO2 NPs) will inevitably lead to their release into the environment. Granular media filtration, a widely used process in water and wastewater treatment plants, has the potential for NP abatement. In this work, laboratory-scale column experiments were performed to study the transport and retention of SiO2 NPs on three widely used porous materials, i.e., sand, anthracite, and granular activated carbon (GAC). Synthetic fluorescent core-shell SiO2 NPs (83 nm) were used to facilitate NP detection. Sand showed very low capacity for SiO2 filtration as this material had a surface with limited surface area and a high concentration of negative charge. Also, we found that the stability and transport of SiO2 NP were strongly dependent on the ionic strength of the solution. Increasing ionic strength led to NP agglomeration and facilitated SiO2 NP retention, while low ionic strength resulted in release of captured NPs from the sand bed. Compared to sand, anthracite and GAC showed higher affinity for SiO2 NP capture. The superior capacity of GAC was primarily due to its porous structure and high surface area. A process model was developed to simulate NP capture in the packed bed columns and determine fundamental filtration parameters. This model provided an excellent fit to the experimental data. Taken together, the results obtained indicate that GAC is an interesting material for SiO2 NP filtration.

Characterization and metrology implications of the 1997 NTRS

NASA Astrophysics Data System (ADS)

Class, W.; Wortman, J. J.

1998-11-01

In the Front-end (transistor forming) area of silicon CMOS device processing, several NTRS difficult challenges have been identified including; scaled and alternate gate dielectric materials, new DRAM dielectric materials, alternate gate materials, elevated contact structures, engineered channels, and large-area cost-effective silicon substrates. This paper deals with some of the characterization and metrology challenges facing the industry if it is to meet the projected needs identified in the NTRS. In the areas of gate and DRAM dielectric, scaling requires that existing material layers be thinned to maximize capacitance. For the current gate dielectric, SiO2 and its nitrided derivatives, direct tunneling will limit scaling to approximately 1.5nm for logic applications before power losses become unacceptable. Low power logic and memory applications may limit scaling to the 2.0-2.2nm range. Beyond these limits, dielectric materials having higher dielectric constant, will permit continued capacitance increases while allowing for the use of thicker dielectric layers, where tunneling may be minimized. In the near term silicon nitride is a promising SiO2 substitute material while in the longer term "high-k" materials such as tantalum pentoxide and barium strontium titanate (BST) will be required. For these latter materials, it is likely that a multilayer dielectric stack will be needed, consisting of an ultra-thin (1-2 atom layer) interfacial SiO2 layer and a high-k overlayer. Silicon wafer surface preparation control, as well as the control of composition, crystal structure, and thickness for such stacks pose significant characterization and metrology challenges. In addition to the need for new gate dielectric materials, new gate materials will be required to overcome the limitations of the current doped polysilicon gate materials. Such a change has broad ramifications on device electrical performance and manufacturing process robustness which again implies a broad range of new characterization and metrology requirements. Finally, the doped structure of the MOS transistor must scale to very small lateral and depth dimensions, and thermal budgets must be reduced to permit the retention of very abrupt highly doped drain and channel engineered structures. Eventually, the NTRS forecasts the need for an elevated contact structure. Here, there are significant challenges associated with three-dimensional dopant profiling, measurement of dopant activity in ultra-shallow device regions, as well as point defect metrology and characterization.

Luminescent spectroscopy and structural properties of Ce3+-doped low-temperature X1-Y2SiO5 material prepared by polymer-assisted sol-gel method

NASA Astrophysics Data System (ADS)

Hamroun, M. S. E.; Guerbous, L.; Bensafi, A.

2016-04-01

Cerium (Ce3+)-doped monoclinic X1-Y2SiO5 (YSO)-type oxyorthosilicates powders were prepared by monomer and polymer-assisted sol-gel method. The present work aims to study the influence of ethylene glycol (EG) monomer, polyethylene glycol (PEG) polymer and polyvinyl alcohol (PVA) polymer, as fuels and nucleating agents for the crystallization, on structural and luminescence properties of the Ce3+ (xCe = 0.01)-doped Y2SiO5. The X-ray diffraction technique, field emission scanning electron microscopy, Fourier transform infrared spectroscopy and steady photoluminescence have been used to characterize the samples. It is found that the types of fuels affect the phase purity and luminescent characteristics of phosphors. All samples exhibit intense violet-blue asymmetric emission band in the range of 370-540 nm with a maximum intensity centered at around 420 nm assigned to the 5d → 4f (2F5/2, 2F7/2) interconfigurational transitions of Ce3+ ion in YSO nanomaterial. Finally, the vibronic coupling parameters are estimated and discussed.

Ag/SiO2 surface-enhanced Raman scattering substrate for plasticizer detection

NASA Astrophysics Data System (ADS)

Wu, Ming-Chung; Lin, Ming-Pin; Lin, Ting-Han; Su, Wei-Fang

2018-04-01

In this study, we demonstrated a simple method of fabricating a high-performance surface-enhanced Raman scattering (SERS) substrate. Monodispersive SiO2 colloidal spheres were self-assembled on a silicon wafer, and then a silver layer was coated on it to obtain a Ag/SiO2 SERS substrate. The Ag/SiO2 SERS substrates were used to detect three kinds of plasticizer with different concentrations, namely, including bis(2-ethylhexyl)phthalate (DEHP), benzyl butyl phthalate (BBP), and dibutyl phthalate (DBP). The enhancement of Raman scattering intensity caused by surface plasmon resonance can be observed using the Ag/SiO2 SERS substrates. The Ag/SiO2 SERS substrate with a 150-nm-thick silver layer can detect plasticizers, and it satisfies the detection limit of plasticizers at 100 ppm. The developed highly sensitive Ag/SiO2 SERS substrates show a potential for the design and fabrication of functional sensors to identify the harmful plasticizers that plastic products release in daily life.

Theoretical study of modulated multi-layer SPR device for improved refractive index sensing

NASA Astrophysics Data System (ADS)

Mohapatra, Saswat; Moirangthem, Rakesh S.

2018-02-01

In the present work, a theoretical investigation of Surface Plasmon Resonance (SPR) properties of a multilayer film (Au-SiO2-Au) coated on a glass prism is being carried out. In this multilayer structure, each interface corresponds to multiple SPR modes. To obtain the maximum reflection dips in the SPR modes, the thickness of SiO2 layer is optimized by varying it from 100-600 nm. Our calculation also reveals that SPR mode corresponding to Au-ambient interface is very sensitive to the changes in the surrounding medium, least affecting other SPR modes. The sensing performance of the proposed nano-plasmonic sensor is theoretically calculated using bulk refractive index sensing. Such multilayer SPR sensing device has advantages over conventional SPR devices in terms of their bulk sensitivity and self-referencing, claiming itself as a potential candidate for the development of highly sensitive biological sensor.

Micro-pyramidal structure fabrication on polydimethylsiloxane (PDMS) by Si (100) KOH wet etching

NASA Astrophysics Data System (ADS)

Hwang, Shinae; Lim, Kyungsuk; Shin, Hyeseon; Lee, Seongjae; Jang, Moongyu

2017-10-01

A high degree of accuracy in bulk micromachining is essential to fabricate micro-electro-mechanical systems (MEMS) devices. A series of etching experiments is carried out using 40 wt% KOH solutions at the constant temperature of 70 °C. Before wet etching, SF6 and O2 are used as the dry etching gas to etch the masking layers of a 100 nm thick Si3N4 and SiO2, respectively. The experimental results indicate that (100) silicon wafer form the pyramidal structures with (111) single crystal planes. All the etch profiles are analyzed using Scanning Electron Microscope (SEM) and the wet etch rates depend on the opening sizes. The manufactured pyramidal structures are used as the pattern of silicon mold. After a short hardening of coated polydimethylsiloxane (PDMS) layer, micro pyramidal structures are easily transferred to PDMS layer.

Contact-lens type of micromachined hydrogenated amorphous Si fluorescence detector coupled with microfluidic electrophoresis devices

NASA Astrophysics Data System (ADS)

Kamei, Toshihiro; Wada, Takehito

2006-09-01

A 5.8-μm-thick SiO2/Ta2O5 multilayer optical interference filter was monolithically integrated and micromachined on a hydrogenated amorphous Si (a-Si :H) pin photodiode to form a fluorescence detector. A microfluidic electrophoresis device was mounted on a detection platform comprising a fluorescence-collecting half-ball lens and the micromachined fluorescence detector. The central aperture of the fluorescence detector allows semiconductor laser light to pass up through the detector and to irradiate an electrophoretic separation channel. The limit of detection is as low as 7nM of the fluorescein solution, and high-speed DNA fragment sizing can be achieved with high separation efficiency. The micromachined a-Si :H fluorescence detector exhibits high sensitivity for practical fluorescent labeling dyes as well as integration flexibility on various substances, making it ideal for application to portable microfluidic bioanalysis devices.

Wrinkling instability in graphene supported on nanoparticle-patterned SiO2

NASA Astrophysics Data System (ADS)

Cullen, William; Yamamoto, Mahito; Pierre-Louis, Olivier; Einstein, Theodore; Fuhrer, Michael

2012-02-01

Atomically-thin graphene is arguably the thinnest possible mechanical membrane: graphene's effective thickness (the thickness of an isotropic continuum slab which would have the same elastic and bending stiffness) is significantly less than 1 å, indicating that graphene can distort out-of-plane to conform to sub-nanometer features. Here we study the elastic response of graphene supported on a SiO2 substrate covered with SiO2 nanoparticles. At a low density of nanoparticles, graphene is largely pinned to the substrate due to adhesive interaction. However, with increasing nanoparticle density, graphene's elasticity dominates adhesion and strain is relieved by the formation of wrinkles which connect peaks introduced by the supporting nanoparticles. At a critical density, the wrinkles percolate, resulting in a wrinkle network. We develop a simple elastic model allowing for adhesion which accurately predicts the critical spacing between nanoparticles for wrinkle formation. This work has been supported by the University of Maryland NSF-MRSEC under Grant No. DMR 05-20471 with supplemental funding from NRI, and NSF-DMR 08-04976.

Synthesis of graphene supported Li2SiO3 as a high performance anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Yang, Shuai; Wang, Qiufen; Miao, Juan; Zhang, Jingyang; Zhang, Dafeng; Chen, Yumei; Yang, Hong

2018-06-01

The Li2SiO3-graphene composite is successfully synthesized through an easy hydrothermal method. The structures and morphologies of the produced samples are characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectrum, Brunauer-Emmett-Teller formalism, scanning electron microscope, transmission electron microscope, and electrochemistry methods. The result shows a well crystalline of the Li2SiO3-GE composite. The existence of graphene doesn't change the crystalline of Li2SiO3. In addition, the Li2SiO3 compound with an average diameter of 20 nm can be seen on the surface of graphene with uniform distribution. After the composite with graphene, the composite displays large surface area which ensures the well electrochemistry of the composite. Finally, the Li2SiO3-graphene composite delivers a high initial capacity of 878.3 mAh g-1 at 1C as well as a high recovery capacity of 400 mAh g-1 after 200 cycles. When charged and discharged at high rate, the Li2SiO3-doping graphene composite still exhibits a high specific capacity of 748.3 mAh g-1 (at 2C, and 576 mAh g-1 at 5C) and well cycling performance. The well synthesized composite possesses well structure and well electrochemistry performance.

Measurement and modelling of forced convective heat transfer coefficient and pressure drop of Al2O3- and SiO2-water nanofluids

NASA Astrophysics Data System (ADS)

Julia, J. E.; Hernández, L.; Martínez-Cuenca, R.; Hibiki, T.; Mondragón, R.; Segarra, C.; Jarque, J. C.

2012-11-01

Forced convective heat transfer coefficient and pressure drop of SiO2- and Al2O3-water nanofluids were characterized. The experimental facility was composed of thermal-hydraulic loop with a tank with an immersed heater, a centrifugal pump, a bypass with a globe valve, an electromagnetic flow-meter, a 18 kW in-line pre-heater, a test section with band heaters, a differential pressure transducer and a heat exchanger. The test section consists of a 1000 mm long aluminium pipe with an inner diameter of 31.2 mm. Eighteen band heaters were placed all along the test section in order to provide a uniform heat flux. Heat transfer coefficient was calculated measuring fluid temperature using immersed thermocouples (Pt100) placed at both ends of the test section and surface thermocouples in 10 axial locations along the test section (Pt1000). The measurements have been performed for different nanoparticles (Al2O3 and SiO2 with primary size of 11 nm and 12 nm, respectively), volume concentrations (1% v., 5% v.), and flow rates (3 103Re<105). Maximum heat transfer coefficient enhancement (300%) and pressure drop penalty (1000%) is obtained with 5% v. SiO2 nanofluid. Existing correlations can predict, at least in a first approximation, the heat transfer coefficient and pressure drop of nanofluids if thermal conductivity, viscosity and specific heat were properly modelled.

Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

NASA Astrophysics Data System (ADS)

Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

2018-03-01

We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

A new photoluminescence emission peak of ZnO SiO2 nanocomposites and its energy transfer to Eu3+ ions

NASA Astrophysics Data System (ADS)

Hong, Jian-He; Cong, Chang-Jie; Zhang, Zhi-Guo; Zhang, Ke-Li

2007-07-01

This work reports a new photoluminescence (PL) emission peak at about 402 nm from amorphous ZnO nanoparticles in a silica matrix, and the energy transfer from it to Eu3+ ions. The amorphous ZnO SiO2 nanocomposites were prepared by the sol gel method, which is verified by X-ray diffraction (XRD) profiles and FT IR spectra. The luminescence emission spectra are fitted by four Gauss profiles, two of which at longer wavelength are due to the defects of the material and the others to amorphous ZnO nanoparticles and the Zn O Si interface state. With the reduction of Zn/Si ratio and diethanolamine, the relative intensities of visible emission decrease. The weak visible emission is due to the reduction of defects after calcined at high temperature. The new energy state at the Zn O Si interface results in strong emission at about 402 nm. When Eu3+ ions are co-doped, weak energy transfer from ZnO SiO2 nanocomposites to Eu3+ emission are observed in the excitation spectra.

Biomimetic synthesis of sericin and silica hybrid colloidosomes for stimuli-responsive anti-cancer drug delivery systems.

PubMed

Yang, Ying; Cai, Yurong; Sun, Ning; Li, Ruijing; Li, Wenhua; Kundu, Subhas C; Kong, Xiangdong; Yao, Juming

2017-03-01

Colloidosomes are becoming popular due to their significant flexibility with respect to microcapsule functionality. This study reports a facile approach for synthesizing silica colloidosomes by using sericin microcapsule as the matrix in an environment-friendly method. The silica colloid arrangement on the sericin microcapsules are orchestrated by altering the reaction parameters. Doxorubicin (DOX), used as a hydrophilic anti-cancer drug model, is encapsulated into the colloidosomes in a mild aqueous solution and becomes stimuli-responsive to different external environments, including pH values, protease, and ionic strength are also observed. Colloidosomes with sub-monolayers, close-packed monolayers, and close-packed multi-layered SiO 2 colloid shells can be fabricated under the optimized reaction conditions. A flexible DOX release from colloidosomes can be obtained via modulating the SiO 2 colloid layer arrangement and thickness. The close-packed and multi-layered SiO 2 colloid shells can best protect the colloidosomes and delay the rapid cargo release. MG-63 cells are killed when doxorubicin is released from the microcapsules due to degradation in the microenvironment of cancer cells. The drug release period is prolonged as SiO 2 shell thickness and integrity increase. This work suggests that the hybrid colloidosomes can be effective in a bioactive molecule delivery system. Copyright © 2016 Elsevier B.V. All rights reserved.

Nanometer-thick gold on silicon as a proxy for single-crystal gold for the electrodeposition of epitaxial cuprous oxide thin films

DOE PAGES

Switzer, Jay A.; Hill, James C.; Mahenderkar, Naveen K.; ...

2016-05-27

Here, single-crystal Au is an excellent substrate for electrochemical epitaxial growth due to its chemical inertness, but the high cost of bulk Au single crystals prohibits their use in practical applications. Here, we show that ultrathin epitaxial films of Au electrodeposited onto Si(111), Si(100), and Si(110) wafers can serve as an inexpensive proxy for bulk single-crystal Au for the deposition of epitaxial films of cuprous oxide (Cu 2O). The Au films range in thickness from 7.7 nm for a film deposited for 5 min to 28.3 nm for a film deposited for 30 min. The film thicknesses are measured bymore » low-angle X-ray reflectivity and X-ray Laue oscillations. High-resolution TEM shows that there is not an interfacial SiO x layer between the Si and Au. The Au films deposited on the Si(111) substrates are smoother and have lower mosaic spread than those deposited onto Si(100) and Si(110). The mosaic spread of the Au(111) layer on Si(111) is only 0.15° for a 28.3 nm thick film. Au films deposited onto degenerate Si(111) exhibit ohmic behavior, whereas Au films deposited onto n-type Si(111) with a resistivity of 1.15 Ω·cm are rectifying with a barrier height of 0.85 eV. The Au and the Cu 2O follow the out-of-plane and in-plane orientations of the Si substrates, as determined by X-ray pole figures. The Au and Cu 2O films deposited on Si(100) and Si(110) are both twinned. The films grown on Si(100) have twins with a [221] orientation, and the films grown on Si(110) have twins with a [411] orientation. An interface model is proposed for all Si orientations, in which the –24.9% mismatch for the Au/Si system is reduced to only +0.13% by a coincident site lattice in which 4 unit meshes of Au coincide with 3 unit meshes of Si. Although this study only considers the deposition of epitaxial Cu 2O films on electrodeposited Au/Si, the thin Au films should serve as high-quality substrates for the deposition of a wide variety of epitaxial materials.« less

Experimental studies of thorium ion implantation from pulse laser plasma into thin silicon oxide layers

NASA Astrophysics Data System (ADS)

Borisyuk, P. V.; Chubunova, E. V.; Lebedinskii, Yu Yu; Tkalya, E. V.; Vasilyev, O. S.; Yakovlev, V. P.; Strugovshchikov, E.; Mamedov, D.; Pishtshev, A.; Karazhanov, S. Zh

2018-05-01

We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma flux expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and a SiO2/Si (0 0 1) sample. The laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with a YAG:Nd3  +  laser having a pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. The depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of x-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy methods. Analysis of the chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on the local concentration of thorium atoms, the experimentally established band gaps were located in the range 6.0–9.0 eV. Theoretical studies of the optical properties of the SiO2 and ThO2 crystalline systems were performed by ab initio calculations within hybrid functional. The optical properties of the SiO2/ThO2 composite were interpreted on the basis of the Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in ‘hot’ laser plasma at the early stages of expansion was performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in a 229Th isotope with energy of 7.8 +/- 0.5 eV.

Processing, Characteristics, and Optical Properties of Wet Chemically Derived Planar Dielectric Waveguides.

NASA Astrophysics Data System (ADS)

Weisenbach, Lori Ann

An experimental study of the processing and attenuation characteristics of solution derived, thin film, planar waveguides was made. In this study, the densification and attenuation characteristics of a variety of compositions were compared. To insure that the effects measured reflected compositional differences and not processing artifacts, guidelines for the reproducible fabrication of optical quality layers, irrespective of composition, were established. A broad range of compositions were prepared and an effort was made to keep the various solution syntheses as simple and similar as possible. The densification and attenuation of binary SiO _2-TiO_2 compositions was measured, then compared to the densification and attenuation of SiO_2-TiO_2 -R_{rm x}O _{rm y} (where R = Al or Zn) ternary compositions. Film densification was not strongly dependent upon composition, and was successfully modelled using the Lorentz-Lorenz relation, assuming the open volume in the undensified films were filled with adsorbed water. The attenuation measured at 632.8 nm did not vary with composition, except for the Zn ternary samples. Waveguides with losses of <1dB/cm could be fabricated from all other compositions. Waveguide attenuation was measured for films of different thickness, and compared to modelled predictions. The attenuation increased as layer thickness decreased, suggesting the predominance of the surface scattering contribution. To confirm that absorption losses were negligible, the wavelength dependence of the waveguides was measured. The wavelength dependence varied with composition, suggesting the absorption varied with composition. Possible mechanisms of absorption in the waveguides were discussed; the interaction of the atmosphere with the film structure is proposed as the cause of the deterioration. Film development for the binary SiO_2 -TiO_2 films was also studied as a function of increased firing time at 500^ circC. Multiple firings at 500^ circC increased the film density and the resistance to deterioration, but also increased the surface roughness of the films. Increased surface roughness, increased the scattering losses measured for the guide. The application of solution derived thin films was demonstrated with the successful fabrication of a novel optical device. The fabrication of the Single Leakage -Channel Grating Coupler illustrated specific design tolerances could be met and the resulting device performance near the theoretical maximum.

In vitro remineralization of acid-etched human enamel with Ca 3SiO 5

NASA Astrophysics Data System (ADS)

Dong, Zhihong; Chang, Jiang; Deng, Yan; Joiner, Andrew

2010-02-01

Bioactive and inductive silicate-based bioceramics play an important role in hard tissue prosthetics such as bone and teeth. In the present study, a model was established to study the acid-etched enamel remineralization with tricalcium silicate (Ca 3SiO 5, C 3S) paste in vitro. After soaking in simulated oral fluid (SOF), Ca-P precipitation layer was formed on the enamel surface, with the prolonged soaking time, apatite layer turned into density and uniformity and thickness increasingly from 250 to 350 nm for 1 day to 1.7-1.9 μm for 7 days. Structure of apatite crystals was similar to that of hydroxyapatite (HAp). At the same time, surface smoothness of the remineralized layer is favorable for the oral hygiene. These results suggested that C 3S treated the acid-etched enamel can induce apatite formation, indicating the biomimic mineralization ability, and C 3S could be used as an agent of inductive biomineralization for the enamel prosthesis and protection.

Preparation and characterization of chain-like and peanut-like Fe3O4@SiO2 core-shell structure.

PubMed

Shi, Haowei; Huang, Yan; Cheng, Chao; Ji, Guoyuan; Yang, Yuxiang; Yuan, Hongming

2013-10-01

The size- and shape-controlled Fe3O4@SiO2 nanocomposites were successfully synthesized via the sol-gel method. The results showed that the size, shape, and property of the products were directly influenced by the amount of TEOS, and the concentration of water-based magnetic fluid in the coating process. The morphology and properties of the products were characterized by TEM, SEM, X-ray powder diffraction, IR and EDS. The Fe3O4@SiO2 composites with easily-controlled size arranged from 58 to 835 nm could be synthesized by adjusting the experimental parameters. When TEOS amount is 1 mL and the concentration of magnetic fluid were 30.0 and 10.0 mg/mL respectively, chain-like and peanuts-like well-dispersed Fe3O4@SiO2 particles with clear core-shell structure were obtained. These size- and shape-controlled Fe3O4@SiO2 composites may have potential application in the field of targeted drug delivery and MRI contrast agent.

Morphology and crystalline phase study of electrospun TiO2 SiO2 nanofibres

NASA Astrophysics Data System (ADS)

Ding, Bin; Kim, Hakyong; Kim, Chulki; Khil, Myungseob; Park, Soojin

2003-05-01

Nanofibres of TiO2-SiO2 (Ti:Si = 50: 50 mol%) with diameters of 50-400 nm were prepared by calcining electrospun nanofibres of polyvinyl acetate (PVac)/titania-silica composite as precursor. These PVac/titania-silica hybrid nanofibres were obtained from a homogenous solution of PVac with a sol-gel of titanium isopropoxide (TiP) and tetraethoxysilane by using the electrospinning technique. The nanofibres were characterized by scanning electron microscopy (SEM), wide-angle x-ray diffraction (WAXD), Fourier transform infrared (FTIR) spectroscopy and Brunauer-Emmett-Teller (BET) surface area. SEM, WAXD and FTIR results indicated that the morphology and crystalline phase of TiO2-SiO2 nanofibres were strongly influenced by the calcination temperature and the content of titania and silica in the nanofibres. Additionally, the BET results showed that the surface area of TiO2-SiO2 nanofibres was decreased with increasing calcination temperature and the content of titania and silica in nanofibres.

Folic acid-conjugated GdPO4:Tb3+@SiO2 Nanoprobe for folate receptor-targeted optical and magnetic resonance bi-modal imaging

NASA Astrophysics Data System (ADS)

Xu, Xianzhu; Zhang, Xiaoying; Wu, Yanli

2016-11-01

Both fluorescent and magnetic nanoprobes have great potential applications for diagnostics and therapy. In the present work, a folic acid-conjugated and silica-modified GdPO4:Tb3+ (GdPO4:Tb3+@SiO2-FA) dual nanoprobe was strategically designed and synthesized for the targeted dual-modality optical and magnetic resonance (MR) imaging via a facile aqueous method. Their structural, optical, and magnetic properties were determined using transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR), ultraviolet-visible spectra (UV-Vis), photoluminescence (PL), and superconducting quantum interference device (SQUID). These results indicated that GdPO4:Tb3+@SiO2-FA were uniform monodisperse core-shell structured nanorods (NRs) with an average length of 200 nm and an average width of 25 nm. The paramagnetic property of the synthesized GdPO4:Tb3+@SiO2-FA NRs was confirmed with its linear hysteresis plot (M-H). In addition, the NRs displayed an obvious T1-weighted effect and thus it could potentially serve as a T1-positive contrast agent. The NRs emitted green lights due to the 5D4 → 7F5 transition of the Tb3+. The in vitro assays with NCI-H460 lung cancer cells and human embryonic kidney cell line 293T cells indicated that the GdPO4:Tb3+@SiO2-FA nanoprobe could specifically bind the cells bearing folate receptors (FR). The MTT assay of the NRs revealed that its cytotoxicity was very low. Further in vivo MRI experiments distinctively depict enhanced anatomical features in a xenograft tumor. These results suggest that the GdPO4:Tb3+@SiO2-FA NPs have excellent imaging and cell-targeting abilities for the folate receptor-targeted dual-modality optical and MR imaging and can be potentially used as the nanoprobe for bioimaging.

Effect of Engineered Nanoparticles on Exopolymeric Substances Release from Marine Phytoplankton.

PubMed

Chiu, Meng-Hsuen; Khan, Zafir A; Garcia, Santiago G; Le, Andre D; Kagiri, Agnes; Ramos, Javier; Tsai, Shih-Ming; Drobenaire, Hunter W; Santschi, Peter H; Quigg, Antonietta; Chin, Wei-Chun

2017-12-13

Engineered nanoparticles (ENPs), products from modern nanotechnologies, can potentially impact the marine environment to pose serious threats to marine ecosystems. However, the cellular responses of marine phytoplankton to ENPs are still not well established. Here, we investigate four different diatom species (Odontella mobiliensis, Skeletonema grethae, Phaeodactylum tricornutum, Thalassiosira pseudonana) and one green algae (Dunaliella tertiolecta) for their extracellular polymeric substances (EPS) release under model ENP treatments: 25 nm titanium dioxide (TiO 2 ), 10-20 nm silicon dioxide (SiO 2 ), and 15-30 nm cerium dioxide (CeO 2 ). We found SiO 2 ENPs can significantly stimulate EPS release from these algae (200-800%), while TiO 2 ENP exposure induced the lowest release. Furthermore, the increase of intracellular Ca 2+ concentration can be triggered by ENPs, suggesting that the EPS release process is mediated through Ca 2+ signal pathways. With better understanding of the cellular mechanism mediated ENP-induced EPS release, potential preventative and safety measures can be developed to mitigate negative impact on the marine ecosystem.

β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

NASA Astrophysics Data System (ADS)

Zhou, Hong; Maize, Kerry; Qiu, Gang; Shakouri, Ali; Ye, Peide D.

2017-08-01

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

NASA Astrophysics Data System (ADS)

Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

2009-08-01

Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

A highly efficient g-C3N4/SiO2 heterojunction: the role of SiO2 in the enhancement of visible light photocatalytic activity.

PubMed

Hao, Qiang; Niu, Xiuxiu; Nie, Changshun; Hao, Simeng; Zou, Wei; Ge, Jiangman; Chen, Daimei; Yao, Wenqing

2016-11-23

SiO 2 , an insulator, hardly has any photocatalytic acitivity due to its intrinsic property, and it is generally used as a hard template to increase the surface area of catalysts. However, in this work, we found that the surface state of the insulator SiO 2 can promote the migration of photogenerated charge carriers, leading to the enhancement of the photooxidation ability of graphitic carbon nitride (g-C 3 N 4 ). A one-pot calcination method was employed to prepare g-C 3 N 4 /SiO 2 composites using melamine and SiO 2 as precursors. The composites present considerably high photocatalytic degradation activities for 2,4-dichlorophenol (2,4-DCP) and rhodamine B (RhB) under visible light (λ > 420 nm) irradiation, which are about 1.53 and 4.18 times as high as those of bulk g-C 3 N 4 , respectively. The enhancement of the photocatalytic activity is due to the fact that the introduction of the insulator SiO 2 in g-C 3 N 4 /SiO 2 composites can greatly improve the specific surface area of the composites; more importantly, the impurity energy level of SiO 2 can help accelerate the separation and transfer of electron-hole pairs of g-C 3 N 4 . Electron paramagnetic resonance (EPR) spectroscopy and trapping experiments with different radical scavengers show that the main active species of g-C 3 N 4 are superoxide radicals, while holes also play a role in photodegradation. For g-C 3 N 4 /SiO 2 -5, besides superoxide radicals and holes, the effect of hydroxyl radicals was greatly improved. Finally, a possible mechanism for the photogenerated charge carrier migration of the g-C 3 N 4 /SiO 2 photocatalyst was proposed.

Strong enhancement effect of silver nanowires on fluorescent property of Eu3+-ligand complexes and desired fluorescent iPP composite materials

NASA Astrophysics Data System (ADS)

Zhang, Yu; Wang, Xinzhi; Tang, Jianguo; Wang, Wei; Wang, Jinping; Belfiore, Laurence A.

2017-04-01

In this contribution, we obtained the strong enhancement effect of silver nanowires(AgNWs) on fluorescent property of Eu3+-antenna complexes through the function of the surface plasmon resonance(SPR) effect. The key structural characteristics are: (1) AgNWs are covered by the Eu3+-ligand complex and spaced by SiO2 nano-layer between AgNWs and Eu3+-ligand complex (this structure is marked as AgNWs@SiO2@EuTP), and (2) AgNWs as nano-material with large ratio of length to diameter show their good dispersion and processability in isotactic polypropylene (iPP). We obtained the important data about the optimal spacer thickness of SiO2 is 15 nm that was not found in previous publications. The enhanced intensity of fluorescence of EuTP by AgNWs in AgNWs@SiO2@EuTP is 9 times compared with that of EuTP. All of these outstanding properties and fine structures were characterized by TEM, FT-IR, XRD, and fluorescence spectrophotometer. On the other hand, the desired fluorescent iPP composite material was obtained through blending AgNWs@SiO2@EuTP into iPP host. Very importantly, the enhancement effect of AgNWs on EuTP fluorescence in AgNWs@SiO2@EuTP is refrained from the quenching caused by host polymer of iPP.

Sol-gel-Derived nano-sized double layer anti-reflection coatings (SiO2/TiO2) for low-cost solar cell fabrication.

PubMed

Lee, Seung Jun; Hur, Man Gyu; Yoon, Dae Ho

2013-11-01

We investigate nano-sized double layer anti-reflection coatings (ARCs) using a TiO2 and SiO2 sol-gel solution process for mono-crystalline silicon solar cells. The process can be easily adapted for spraying sol-gel coatings to reduce manufacturing cost. The spray-coated SiO2/TiO2 nano-sized double layer ARCs were deposited on mono-crystalline silicon solar cells, and they showed good optical properties. The spray coating process is a lower-cost fabrication process for large-scale coating than vacuum deposition processes such as PECVD. The measured average optical reflectance (300-1200 nm) was about approximately 8% for SiO2/TiO2 nano-sized double layer ARCs. The electrical parameters of a mono-crystalline silicon solar cell and reflection losses show that the SiO2/TiO2 stacks can improve cell efficiency by 0.2% compared to a non-coated mono-crystalline silicon solar cell. In the results, good correlation between theoretical and experimental data was obtained. We expect that the sol-gel spray-coated mono-crystalline silicon solar cells have high potential for low-cost solar cell fabrication.

Nd:(Gd0.3Y0.7)2SiO5 crystal: A novel efficient dual-wavelength continuous-wave medium

NASA Astrophysics Data System (ADS)

Xu, Xiaodong; Di, Juqing; Zhang, Jian; Tang, Dingyuan; Xu, Jun

2016-05-01

Efficient dual-wavelength continuous-wave (CW) and passively Q-switched laser operation of Nd:(Gd0.3Y0.7)2SiO5 crystal were investigated for the first time to our knowledge. Maximum CW output power of 2.3 W was obtained under the absorbed pump power of 4.6 W, corresponding to the slope efficiency of 55%. Dual-wavelength CW laser with respective wavelengths around 1074 nm and 1078 nm were achieved. With Cr4+:YAG as the saturable absorber, passive Q-switched performance was obtained. The slope efficiency of passively Q-switched operation was 45%. The shortest pulse width, the corresponding pulse energy and peak power were calculated to be 13.1 ns, 50.2 μJ and 3.8 kW, respectively.

A promising tritium breeding material: Nanostructured 2Li2TiO3-Li4SiO4 biphasic ceramic pebbles

NASA Astrophysics Data System (ADS)

Dang, Chen; Yang, Mao; Gong, Yichao; Feng, Lan; Wang, Hailiang; Shi, Yanli; Shi, Qiwu; Qi, Jianqi; Lu, Tiecheng

2018-03-01

As an advanced tritium breeder material for the fusion reactor blanket of the International Thermonuclear Experimental Reactor (ITER), Li2TiO3-Li4SiO4 biphasic ceramic has attracted widely attention due to its merits. In this paper, the uniform precursor powders were prepared by hydrothermal method, and nanostructured 2Li2TiO3-Li4SiO4 biphasic ceramic pebbles were fabricated by an indirect wet method at the first time. In addition, the composition dependence (x/y) of their microstructure characteristics and mechanical properties were investigated. The results indicated that the crush load of biphasic ceramic pebbles was better than that of single phase ceramic pebbles under identical conditions. The 2Li2TiO3-Li4SiO4 ceramic pebbles have good morphology, small grain size (90 nm), satisfactory crush load (37.8 N) and relative density (81.8 %T.D.), which could be a promising breeding material in the future fusion reactor.

Synthesis of Fe5C2@SiO2 core@shell nanoparticles as a potential candidate for biomedical application

NASA Astrophysics Data System (ADS)

Ahmadpoor, Fatemeh; Shojaosadati, Seyed Abbas; Delavari H, Hamid; Christiansen, Gunna; Saber, Reza

2018-05-01

A new strategy for water-dispersibility of hydrophobic carbide nanostructures was proposed. In this regard, hydrophobic Fe5C2 nanoparticles (NPs) with size ranging 25–40 nm were synthesized and coated with 12–15 nm silica shell for biomedical applications. X-ray diffraction (XRD) results revealed that Fe5C2 NPs with monoclinic structure were successfully prepared. The crystalline structure of Fe5C2 NPs was remained unchanged and saturation magnetization of core remained nearly constant after coating with silica shell. Moreover, Raman spectroscopy identified D-band of amorphous carbon shells which was also confirmed by transmission electron microscopy (TEM). Finally, Fe5C2@SiO2 core@shell NPs demonstrated no significant cytotoxicity and appropriate heat generating which makes them a promising candidate for magnetic fluid hyperthermia applications.

Cationic surfactant assisted sonochemical synthesis of Nd3+ doped Zn2SiO4 nanostructures for solid state lighting applications

NASA Astrophysics Data System (ADS)

Basavaraj, R. B.; Malleshappa, J.; Darshan, G. P.; Prasad, B. Daruka; Nagabhushana, H.

2018-04-01

For the first time cationic surfactant assisted ultrasound synthesis route has been used for the preparation of pure and Nd3+ (0.5-9 mol %) doped Zn2SiO4 nanophosphors. The shape, size and morphology of the products were tuned by controlling the various experimental parameters. The final product was well characterized by sophisticated techniques viz. powder X-ray diffraction (PXRD), Ultraviolet visible spectroscopy (UV-Vis) and photoluminescence (PL). The powder X-ray diffraction patterns confirmed that the synthesized samples exhibit hexagonal phase without any impurity. The DRS spectra showed major peaks at 275, 360, 529, 586, 680, 742 and 806 nm due to the transitions of the 4f electrons of Nd3+ from the ground-state 4I9/2 to 2F5/2, 4D3/2 + 4D5/2 + 2I11/2, 2K13/2 + 4G7/2 + 4G9/2, 4G5/2 + 2G7/2, 4F7/2 + 4S3/2, 4F5/2 + 2H9/2 and 4F3/2 respectively. The band energy gap (Eg) of the samples were estimated and found to be in the range 5.32 - 5.52 eV. Under 421 nm excitation, PL spectra exhibit strong near ultraviolet emission peaks at˜444 nm, 459 nm and 520 nm were attributed to 2P3/2 → 4I13/2, 2P3/2 → 4I15/2, 1I6 → 3H4, 2P1/2 → 4I9/2 and 4G7/2 → 4I9/2 transitions respectively. The photometric studies indicate that the synthesized Zn2SiO4: Nd3+ nanophosphors can be tuned from blue to pale green by varying the dopant concentration. The current synthesis route is rapid, environmentally benign, cost-effective and useful for industrial applications such as solid state lighting and display devices.

Sol-Gel Derived Active Material for Yb Thin-Disk Lasers

PubMed Central

Almeida, Rui M.; Ribeiro, Tiago

2017-01-01

A ytterbium doped active material for thin-disk laser was developed based on aluminosilicate and phosphosilicate glass matrices containing up to 30 mol% YbO1.5. Thick films and bulk samples were prepared by sol-gel processing. The structural nature of the base material was assessed by X-ray diffraction and Raman spectroscopy and the film morphology was evidenced by scanning electron microscopy. The photoluminescence (PL) properties of different compositions, including emission spectra and lifetimes, were also studied. Er3+ was used as an internal reference to compare the intensities of the Yb3+ PL peaks at ~ 1020 nm. The Yb3+ PL lifetimes were found to vary between 1.0 and 0.5 ms when the Yb concentration increased from 3 to 30 mol%. Based on a figure of merit, the best active material selected was the aluminosilicate glass composition 71 SiO2-14 AlO1.5-15 YbO1.5 (in mol%). An active disk, ~ 36 μm thick, consisting of a Bragg mirror, an aluminosilicate layer doped with 15 mol% Yb and an anti-reflective coating, was fabricated. PMID:28869488

Synthesis of subnanometer-diameter vertically aligned single-walled carbon nanotubes with copper-anchored cobalt catalysts.

PubMed

Cui, Kehang; Kumamoto, Akihito; Xiang, Rong; An, Hua; Wang, Benjamin; Inoue, Taiki; Chiashi, Shohei; Ikuhara, Yuichi; Maruyama, Shigeo

2016-01-21

We synthesize vertically aligned single-walled carbon nanotubes (VA-SWNTs) with subnanometer diameters on quartz (and SiO2/Si) substrates by alcohol CVD using Cu-anchored Co catalysts. The uniform VA-SWNTs with a nanotube diameter of 1 nm are synthesized at a CVD temperature of 800 °C and have a thickness of several tens of μm. The diameter of SWNTs was reduced to 0.75 nm at 650 °C with the G/D ratio maintained above 24. Scanning transmission electron microscopy energy-dispersive X-ray spectroscopy (EDS-STEM) and high angle annular dark field (HAADF-STEM) imaging of the Co/Cu bimetallic catalyst system showed that Co catalysts were captured and anchored by adjacent Cu nanoparticles, and thus were prevented from coalescing into a larger size, which contributed to the small diameter of SWNTs. The correlation between the catalyst size and the SWNT diameter was experimentally clarified. The subnanometer-diameter and high-quality SWNTs are expected to pave the way to replace silicon for next-generation optoelectronic and photovoltaic devices.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

PubMed

Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

2015-09-04

We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.

Robust nanopatterning by laser-induced dewetting of metal nanofilms.

PubMed

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2006-08-28

We have observed nanopattern formation with robust and controllable spatial ordering by laser-induced dewetting in nanoscopic metal films. Pattern evolution in Co film of thickness 1≤h≤8 nm on SiO(2) was achieved under multiple pulse irradiation using a 9 ns pulse laser. Dewetting leads to the formation of cellular patterns which evolve into polygons that eventually break up into nanoparticles with unimodal size distribution and short range ordering in nearest neighbour spacing R. Spatial ordering was attributed to a hydrodynamic thin film instability and resulted in a predictable variation of R and particle diameter D with h. The length scales R and D were found to be independent of the laser energy. These results suggest that spatially ordered metal nanoparticles can be robustly assembled by laser-induced dewetting.

Fabrication and enhanced photoluminescence properties of Sm3+-doped ZnO-Al2O3-B2O3-SiO2 glass derived willemite glass-ceramic nanocomposites

NASA Astrophysics Data System (ADS)

Tarafder, Anal; Molla, Atiar Rahaman; Mukhopadhyay, Sunanda; Karmakar, Basudeb

2014-07-01

The transparent willemite, Zn2SiO4 (ZS) glass-ceramic nanocomposites were prepared from melt-quench derived ZnO-Al2O3-B2O3-SiO2 (ZABS) precursor glass by an isothermal heat-treatment process. The generation of willemite crystal phase, size and morphology with increase in heat-treatment time was examined by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. The average calculated crystallite size obtained from XRD is found to be in the range 80-120 nm. The decreased refractive index with increase in heat-treatment time attributed to partial replacement of ZnO4 units of willemite nanocrystals by AlO4 units and simultaneous generation of vacancies in the Zn-site. Fourier transform infrared (FTIR) reflection spectroscopy exhibits the structural evolution of willemite glass-ceramics. The photoluminescence spectra of Sm3+ ions exhibit emission transitions of 4G5/2 → 6HJ (J = 5/2, 7/2, 9/2, 11/2) and its excitation spectra shows an intense absorption band at 402 nm. These spectra reveal that the luminescence performance of the glass-ceramic nanocomposites is enhanced up to 14-fold with crystallization into willemite.

Detection and Quantification of Silver Nanoparticles at Environmentally Relevant Concentrations Using Asymmetric Flow Field??Flow Fractionation Online with Single Particle Inductively Coupled Plasma Mass Spectrometry

EPA Pesticide Factsheets

The presence of silver nanoparticles (AgNPs) in aquatic environments could potentially cause adverse impacts on ecosystems and human health. However, current understanding of the environmental fate and transport of AgNPs is still limited because their properties in complex environmental samples cannot be accurately determined. In this study, the feasibility of using asymmetric flow field-flow fractionation (AF4) connected online with single particle inductively coupled plasma mass spectrometry (spICPMS) to detect and quantify AgNPs at environmentally relevant concentrations was investigated. The AF4 channel had a thickness of 350 00b5m and its accumulation wall was a 10 kDa regenerated cellulose membrane. A 0.02 % FL-70 surfactant solution was used as an AF4 carrier. With 1.2 mL/min AF4 cross flow rate, 1.5 mL/min AF4 channel flow rate, and 5 ms spICPMS dwell time, the AF4??spICPMS can detect and quantify 40 ?? 80 nm AgNPs, as well as Ag-SiO2 nanoparticles (51.0 nm diameter Ag core and 21.6 nm SiO2 shell), with good recovery within 30 min. This system was not only effective in differentiating and quantifying different types of AgNPs with similar hydrodynamic diameters, such as in mixtures containing Ag-SiO2 core-shell nanoparticles and 40 ?? 80 nm AgNPs, but also suitable for differentiating between 40 nm AgNPs and elevated dissolved Ag content. The study results indicate that AF4??spICPMS is capable of detecting and quantifying AgNPs and other engineered

Effect of heat treatment on phase composition and crystal structure of thin WSi2 films on silicon substrates

NASA Astrophysics Data System (ADS)

Biryukov, Y. P.; Dostanko, A. P.; Maltsev, A. A.; Shakhlevich, G. M.

1984-10-01

An experimental study of WSi2 films on silicon substrates with either 111 or 100 orientation was made, for the purpose of determining the effect of annealing by heat treatment on their phase composition and crystal structure. Films of 0.2 micron thickness were deposited at a rate of 0.5 nm/s on a silicon surface which was predecontaminated of SiO2 layers and adsorbate atoms by ion sputtering in one vacuum cycle. Deposition was by condensation, with the substrate held at various temperatures from 390 to 500 C, and then annealed in an argon atmosphere at various temperatures from 700 to 1000 C for 30 min. Subsequent phase analysis at room temperature was performed with a DRON-2 X-ray diffractometer, using a CuK (sub alpha)-radiation source and covering the 20 = 10 to 130 deg range of angles by the Debye-Sherer method, while the surface morphology was examined under an electron microscope.

Effect of surface morphology on friction of graphene on various substrates

NASA Astrophysics Data System (ADS)

Cho, Dae-Hyun; Wang, Lei; Kim, Jin-Seon; Lee, Gwan-Hyoung; Kim, Eok Su; Lee, Sunhee; Lee, Sang Yoon; Hone, James; Lee, Changgu

2013-03-01

The friction of graphene on various substrates, such as SiO2, h-BN, bulk-like graphene, and mica, was investigated to characterize the adhesion level between graphene and the underlying surface. The friction of graphene on SiO2 decreased with increasing thickness and converged around the penta-layers due to incomplete contact between the two surfaces. However, the friction of graphene on an atomically flat substrate, such as h-BN or bulk-like graphene, was low and comparable to that of bulk-like graphene. In contrast, the friction of graphene folded onto bulk-like graphene was indistinguishable from that of mono-layer graphene on SiO2 despite the ultra-smoothness of bulk-like graphene. The characterization of the graphene's roughness before and after folding showed that the corrugation of graphene induced by SiO2 morphology was preserved even after it was folded onto an atomically flat substrate. In addition, graphene deposited on mica, when folded, preserved the same corrugation level as before the folding event. Our friction measurements revealed that graphene, once exfoliated from the bulk crystal, tends to maintain its corrugation level even after it is folded onto an atomically flat substrate and that ultra-flatness in both graphene and the substrate is required to achieve the intimate contact necessary for strong adhesion.The friction of graphene on various substrates, such as SiO2, h-BN, bulk-like graphene, and mica, was investigated to characterize the adhesion level between graphene and the underlying surface. The friction of graphene on SiO2 decreased with increasing thickness and converged around the penta-layers due to incomplete contact between the two surfaces. However, the friction of graphene on an atomically flat substrate, such as h-BN or bulk-like graphene, was low and comparable to that of bulk-like graphene. In contrast, the friction of graphene folded onto bulk-like graphene was indistinguishable from that of mono-layer graphene on SiO2 despite the ultra-smoothness of bulk-like graphene. The characterization of the graphene's roughness before and after folding showed that the corrugation of graphene induced by SiO2 morphology was preserved even after it was folded onto an atomically flat substrate. In addition, graphene deposited on mica, when folded, preserved the same corrugation level as before the folding event. Our friction measurements revealed that graphene, once exfoliated from the bulk crystal, tends to maintain its corrugation level even after it is folded onto an atomically flat substrate and that ultra-flatness in both graphene and the substrate is required to achieve the intimate contact necessary for strong adhesion. Electronic supplementary information (ESI) available: Sample preparation method, identification of graphene thickness, AFM and FFM measurements. See DOI: 10.1039/c3nr34181j

Sustainable synthesis of magnetically separable SiO2/Co@Fe2O4 nanocomposite and its catalytic applications for the benzimidazole synthesis

NASA Astrophysics Data System (ADS)

Jithendra Kumara, K. S.; Krishnamurthy, G.; Sunil Kumar, N.; Naik, Nagaraja; Praveen, T. M.

2018-04-01

The Co(II) and Fe(III) centres magnetically separable two new mesoporous nanocatalyst were synthesised via chemical synthesis method. The transmission electron microscopic studies (TEM) show that, the particles are spherical shape with mean size of 20 nm. The Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) reveals that SiO2 is coating on the surface of the cobalt ferrate nanoparticle (CoFe2O4). The SiO2 coating is efficiently preventing the aggregated collision of nanoparticles. Magnetic measurements show that diamagnetic character of the SiO2 is unaffected to the coercivity of SiO2 coated CoFe2O4 particles. In addition, these nanoparticles are used as nanocatalyst for high yielding, facile and expeditious synthesis of various functionalized 2-arylbenzimidazoles via one-pot condensation. The cascade including imine formation, cyclization, condensation, and aromatization occurs, without addition of any reducing or oxidizing agents. In all situations, the desired product was synthesised with excellent yield. The shorter reaction time, mild reaction condition, simplicity, non-toxicity, safe reaction and easy workup are the impotent merits of this protocol.

Characteristics of blue organic light emitting diodes with different thick emitting layers

NASA Astrophysics Data System (ADS)

Li, Chong; Tsuboi, Taiju; Huang, Wei

2014-08-01

We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

Sub-wavelength grating structure on the planar waveguide (Conference Presentation)

NASA Astrophysics Data System (ADS)

Qing-Song, Zhu; Sheng-Hui, Chen

2016-10-01

Making progress in recent years, with the technology of the grating, the grating period can be reduced to shrink the size of the light coupler on a waveguide. The working wavelength of the light coupler can be in the range from the near-infrared to visible. In this study , we used E-gun evaporation system with ion-beam-assisted deposition system to fabricate bottom cladding (SiO2), guiding layer (Ta2O5) and Distributed Bragg Reflector(DBR) of the waveguide on the silicon substrate. Electron-beam lithography is used to make sub-wavelength gratings and reflector grating on the planar waveguide which is a coupling device on the guiding layer. The best fabrication parameters were analyzed to deposit the film. The exposure and development times also influenced to fabricate the grating quality. The purpose is to reduce the device size and enhance coupling efficiency which maintain normal incidence of the light . We designed and developed the device using the Finite-Difference Time-Domain (FDTD) method. The grating period, depth, fill factor, film thickness, Distributed Bragg Reflector(DBR) numbers and reflector grating period have been discussed to enhance coupling efficiency and maintained normal incidence of the light. According to the simulation results, when the wavelength is 1300 nm, the coupling grating period is 720 nm and the Ta2O5 film is 460 nm with 360 nm of reflector grating period and 2 layers of Distributed Bragg Reflector, which had the optimum coupling efficiency and normal incidence angle. In the measurement, We successfully measured the TE wave coupling efficiency of the photoresist grating coupling device.

Effects of half-wave and full-wave power source on the anodic oxidation process on AZ91D magnesium alloy

NASA Astrophysics Data System (ADS)

Wang, Ximei; Zhu, Liqun; Li, Weiping; Liu, Huicong; Li, Yihong

2009-03-01

Anodic films have been prepared on the AZ91D magnesium alloys in 1 mol/L Na 2SiO 3 with 10 vol.% silica sol addition under the constant voltage of 60 V at room temperature by half-wave and full-wave power sources. The weight of the anodic films has been scaled by analytical balance, and the thickness has been measured by eddy current instrument. The surface morphologies, chemical composition and structure of the anodic films have been characterized by scanning electron microscopy (SEM), energy dispersion spectrometry (EDS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the thickness and weight of the anodic films formed by the two power sources both increase with the anodizing time, and the films anodized by full-wave power source grow faster than that by half-wave one. Furthermore, we have fitted polynomial to the scattered data of the weight and thickness in a least-squares sense with MATLAB, which could express the growth process of the anodic films sufficiently. The full-wave power source is inclined to accelerate the growth of the anodic films, and the half-wave one is mainly contributed to the uniformity and fineness of the films. The anodic film consists of crystalline Mg 2SiO 4 and amorphous SiO 2.