Deposition of high quality YBa2Cu3O(7-delta) thin films over large areas by pulsed laser ablation with substrate scanning

NASA Technical Reports Server (NTRS)

Davis, M. F.; Wosik, J.; Forster, K.; Deshmukh, S. C.; Rampersad, H. R.

1991-01-01

The paper describes thin films deposited in a system where substrates are scanned over areas up to 3.5 x 3.5 cm through the stationary plume of an ablated material defined by an aperture. These YBCO films are deposited on LaAlO3 and SrTiO3 substrates with the thickness of 90 and 160 nm. Attention is focused on the main features of the deposition system: line focusing of the laser beam on the target; an aperture defining the area of the plume; computerized stepper motor-driven X-Y stage translating the heated sampler holder behind the plume-defining aperture in programmed patterns; and substrate mounting block with uniform heating at high temperatures over large areas. It is noted that the high degree of uniformity of the properties in each film batch illustrates that the technique of pulsed laser deposition can be applied to produce large YBCO films of high quality.

High temperature superconducting YBCO microwave filters

NASA Astrophysics Data System (ADS)

Aghabagheri, S.; Rasti, M.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.; Mohammadpour-Aghdam, K.; Faraji-Dana, R.

2018-06-01

Epitaxial thin films of YBCO high temperature superconductor are widely used in telecommunication technology such as microwave filter, antenna, coupler and etc., due to their lower surface resistance and lower microwave loss than their normal conductor counterparts. Thin films of YBCO were fabricated by PLD technique on LAO substrate. Transition temperature and width were 88 K and 3 K, respectively. A filter pattern was designed and implemented by wet photolithography method on the films. Characterization of the filter at 77 K has been compared with the simulation results and the results for a made gold filter. Both YBCO and gold filters show high microwave loss. For YBCO filter, the reason may be due to the improper contacts on the feedlines and for gold filter, low thickness of the gold film has caused the loss increased.

Improved interface growth and enhanced flux pinning in YBCO films deposited on an advanced IBAD-MgO based template

NASA Astrophysics Data System (ADS)

Khan, M. Z.; Zhao, Y.; Wu, X.; Malmivirta, M.; Huhtinen, H.; Paturi, P.

2018-02-01

The growth mechanism is studied from the flux pinning point of view in small-scale YBa2Cu3O6+x (YBCO) thin films deposited on a polycrystalline hastelloy with advanced IBAD-MgO based buffer layer architecture. When compared the situation with YBCO films grown on single crystal substrates, the most critical issues that affect the suitable defect formation and thus the optimal vortex pinning landscape, have been studied as a function of the growth temperature and the film thickness evolution. We can conclude that the best critical current property in a wide applied magnetic field range is observed in films grown at relatively low temperature and having intermediate thickness. These phenomena are linked to the combination of the improved interface growth, to the film thickness related crystalline relaxation and to the formation of linear array of edge dislocations that forms the low-angle grain boundaries through the entire film thickness and thus improve the vortex pinning properties. Hence, the optimized buffer layer structure proved to be particularly suitable for new coated conductor solutions.

Exfoliated YBCO filaments for second-generation superconducting cable

NASA Astrophysics Data System (ADS)

Solovyov, Vyacheslav; Farrell, Paul

2017-01-01

The second-generation high temperature superconductor (2G HTS) wire is the most promising conductor for high-field magnets such as accelerator dipoles and compact fusion devices. The key element of the wire is a thin Y1Ba2Cu3O7 (YBCO) layer deposited on a flexible metal substrate. The substrate, which becomes incorporated in the 2G conductor, reduces the electrical and mechanical performance of the wire. This is a process that exfoliates the YBCO layer from the substrate while retaining the critical current density of the superconductor. Ten-centimeter long coupons of exfoliated YBCO layers were manufactured, and detailed structural, electrical, and mechanical characterization were reported. After exfoliation, the YBCO layer was supported by a 75 μm thick stainless steel foil, which makes for a compact, mechanically stronger, and inexpensive conductor. The critical current density of the filaments was measured at both 77 K and 4.2 K. The exfoliated YBCO retained 90% of the original critical current. Similarly, tests in an external magnetic field at 4.2 K confirmed that the pinning strength of the YBCO layer was also retained following exfoliation.

BaHfO3 artificial pinning centres in TFA-MOD-derived YBCO and GdBCO thin films

NASA Astrophysics Data System (ADS)

Erbe, M.; Hänisch, J.; Hühne, R.; Freudenberg, T.; Kirchner, A.; Molina-Luna, L.; Damm, C.; Van Tendeloo, G.; Kaskel, S.; Schultz, L.; Holzapfel, B.

2015-11-01

Chemical solution deposition (CSD) is a promising way to realize REBa2Cu3O7-x (REBCO; RE = rare earth (here Y, Gd))-coated conductors with high performance in applied magnetic fields. However, the preparation process contains numerous parameters which need to be tuned to achieve high-quality films. Therefore, we investigated the growth of REBCO thin films containing nanometre-scale BaHfO3 (BHO) particles as pinning centres for magnetic flux lines, with emphasis on the influence of crystallization temperature and substrate on the microstructure and superconductivity. Conductivity, microscopy and x-ray investigations show an enhanced performance of BHO nano-composites in comparison to pristine REBCO. Further, those measurements reveal the superiority of GdBCO to YBCO—e.g. by inductive critical current densities, J c, at self-field and 77 K. YBCO is outperformed by more than 1 MA cm-2 with J c values of up to 5.0 MA cm-2 for 265 nm thick layers of GdBCO(BHO) on lanthanum aluminate. Transport in-field J c measurements demonstrate high pinning force maxima of around 4 GN m-3 for YBCO(BHO) and GdBCO(BHO). However, the irreversibility fields are appreciably higher for GdBCO. The critical temperature was not significantly reduced upon BHO addition to both YBCO and GdBCO, indicating a low tendency for Hf diffusion into the REBCO matrix. Angular-dependent J c measurements show a reduction of the anisotropy in the same order of magnitude for both REBCO compounds. Theoretical models suggest that more than one sort of pinning centre is active in all CSD films.

High quality uniform YBCO film growth by the metalorganic deposition using trifluoroacetates

NASA Astrophysics Data System (ADS)

Wang, S. S.; Zhang, Z. L.; Wang, L.; Gao, L. K.; Liu, J.

2017-03-01

A need exists for the large-area superconducting YBa2Cu3O7-x (YBCO) films with high critical current density for microwave communication and/or electric power applications. Trifluoroacetic metalorganic (TFA-MOD) method is a promising low cost technique for large-scale production of YBCO films, because it does not need high vacuum device and is easily applicable to substrates of various shape and size. In this paper, double-sided YBCO films with maximum 2 in diameter were prepared on LaAlO3 substrates by TFA-MOD method. Inductive critical current densitiy Jc, microwave surface resistance Rs, as well as the microstructure were characterized. A newly homemade furnace system was used to epitaxially grown YBCO films, which can improve the uniformity of YBCO film significantly by gas supply and temperature distribution proper design. Results showed that the large area YBCO films were very uniform in microstructure and thickness distribution, an average inductive Jc in excess of 6 MA/cm2 with uniform distribution, and low Rs (10 GHz) below 0.3 mΩ at 77 K were obtained. Andthe film filter may be prepared to work at temperatures lower than 74 K. These results are very close to the highest value of YBCO films made by conventional vacuum method, so we show a very promising route for large-scale production of high quality large-area YBCO superconducting films at a lower cost.

Advanced development of TFA-MOD coated conductors

NASA Astrophysics Data System (ADS)

Rupich, M. W.; Li, X.; Sathyamurthy, S.; Thieme, C.; Fleshler, S.

2011-11-01

American Superconductor is manufacturing 2G wire for initial commercial applications. The 2G wire properties satisfy the requirements for these initial projects; however, improvements in the critical current, field performance and cost are required to address the broad range of potential commercial and military applications. In order to meet the anticipated the performance and cost requirements, AMSC's R&D effort is focused on two major areas: (1) higher critical current and (2) enhanced flux pinning. AMSC's current 2G production wire, designed around a 0.8 μm thick YBCO layer deposited by a Metal Organic Deposition (MOD) process, carries a critical current in the range of 200-300 A/cm-w (77 K, sf). Achieving higher critical current requires increasing the thickness of the YBCO layer. This paper describes recent progress at AMSC on increasing the critical current of MOD-YBCO films using processes compatible with low-cost, high-rate manufacturing.

Superconducting properties of nano-sized SiO2 added YBCO thick film on Ag substrate

NASA Astrophysics Data System (ADS)

Almessiere, Munirah Abdullah; Al-Otaibi, Amal lafy; Azzouz, Faten Ben

2017-10-01

The microstructure and the flux pinning capability of SiO2-added YBa2Cu3Oy thick films on Ag substrates were investigated. A series of YBa2Cu3Oy thick films with small amounts (0-0.5 wt%) of nano-sized SiO2 particles (12 nm) was prepared. The thicknesses of the prepared thick films was approximately 100 µm. Phase analysis by x-ray diffraction and microstructure examination by scanning electron microscopy were performed and the critical current density dependence on the applied magnetic field Jc(H) and electrical resistivity ρ(T) were investigated. The magnetic field and temperature dependence of the critical current density (Jc) was calculated from magnetization measurements using Bean's critical state model. The results showed that the addition of a small amount (≤0.02 wt%) of SiO2 was effective in enhancing the critical current densities in the applied magnetic field. The sample with 0.01 wt% of added SiO2 exhibited a superconducting characteristics under an applied magnetic field for a temperature ranging from 10 to 77 K.

Multi-Aperture Shower Design for the Improvement of the Transverse Uniformity of MOCVD-Derived GdYBCO Films

PubMed Central

Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Zhang, Fei; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

2017-01-01

A multi-aperture shower design is reported to improve the transverse uniformity of GdYBCO superconducting films on the template of sputtered-LaMnO3/epitaxial-MgO/IBAD-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes. The GdYBCO films were prepared by the metal organic chemical vapor deposition (MOCVD) process. The transverse uniformities of structure, morphology, thickness, and performance were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), step profiler, and the standard four-probe method using the criteria of 1 μV/cm, respectively. Through adopting the multi-aperture shower instead of the slit shower, measurement by step profiler revealed that the thickness difference between the middle and the edges based on the slit shower design was well eliminated. Characterization by SEM showed that a GdYBCO film with a smooth surface was successfully prepared. Moreover, the transport critical current density (Jc) of its middle and edge positions at 77 K and self-field were found to be over 5 MA/cm2 through adopting the micro-bridge four-probe method. PMID:28914793

Field Performance of an Optimized Stack of YBCO Square “Annuli” for a Compact NMR Magnet

PubMed Central

Hahn, Seungyong; Voccio, John; Bermond, Stéphane; Park, Dong-Keun; Bascuñán, Juan; Kim, Seok-Beom; Masaru, Tomita; Iwasa, Yukikazu

2011-01-01

The spatial field homogeneity and time stability of a trapped field generated by a stack of YBCO square plates with a center hole (square “annuli”) was investigated. By optimizing stacking of magnetized square annuli, we aim to construct a compact NMR magnet. The stacked magnet consists of 750 thin YBCO plates, each 40-mm square and 80- μm thick with a 25-mm bore, and has a Ø10 mm room-temperature access for NMR measurement. To improve spatial field homogeneity of the 750-plate stack (YP750) a three-step optimization was performed: 1) statistical selection of best plates from supply plates; 2) field homogeneity measurement of multi-plate modules; and 3) optimal assembly of the modules to maximize field homogeneity. In this paper, we present analytical and experimental results of field homogeneity and temporal stability at 77 K, performed on YP750 and those of a hybrid stack, YPB750, in which two YBCO bulk annuli, each Ø46 mm and 16-mm thick with a 25-mm bore, are added to YP750, one at the top and the other at the bottom. PMID:22081753

Design and performance of a high-Tc superconductor coplanar waveguide filter

NASA Technical Reports Server (NTRS)

Chew, Wilbert; Riley, A. L.; Rascoe, Daniel L.; Hunt, Brian D.; Foote, Marc C.; Cooley, Thomas W.; Bajuk, Louis J.

1991-01-01

The design of a coplanar waveguide low-pass filter made of YBa2Cu3O(7-delta) (YBCO) on an LaAlO3 substrate is described. Measurements were incorporated into simple models for microwave CAD analysis to develop a final design. The patterned and packaged coplanar waveguide low-pass filter of YBCO, with dimensions suited for integrated circuits, exhibited measured insertion losses when cooled in liquid nitrogen superior to those of a similarly cooled thin-film copper filter throughout the 0 to 9.5 GHz passband. Coplanar waveguide models for use with thin-film normal metal (with thickness either greater or less than the skin depth) and YBCO are discussed and used to compare the losses of the measured YBCO and copper circuits.

Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

NASA Astrophysics Data System (ADS)

Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Markowitz, A. R.; Erck, R. A.; Baurceanu, R.; Dorris, S. E.; Miller, D. J.; Balachandran, U.

2003-04-01

Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx9° was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55°. In-plane texture in the ISD MgO films developed in the first approx0.5 mum from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the substrate normal have a unique orientation relationship with the ISD MgO films. An orientation relationship of YBCOlangle100rangleparallelMgOlangle111rangle and YBCOlangle010rangleparallelMgOlangle110rangle was measured by x-ray pole figure analyses and confirmed by transmission electron microscopy. A Tc of 91 K with a sharp transition and transport Jc of 5.5 × 105 A cm-2 at 77 K in self-field were measured on a YBCO film that was 0.46 mum thick, 4 mm wide and 10 mm long.

Modeling and Optimization of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applicaitons

NASA Technical Reports Server (NTRS)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.; Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.

1996-01-01

The development of a YBa(sub 2)Cu(sub 3)O(sub 7-(kronecker delta))(YBCO) hot-electron bolometer (HEB) quasioptical mixer for a 2.5 heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of heat diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated....a single sideband temperature of less than 2000k is predicted.

Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

NASA Astrophysics Data System (ADS)

Wakana, H.; Adachi, S.; Kamitani, A.; Sugiyama, H.; Sugano, T.; Horibe, M.; Ishimaru, Y.; Tarutani, Y.; Tanabe, K.

2003-10-01

We examined the fabrication conditions to obtain high-quality ramp-edge Josephson junctions on a liquid-phase-epitaxy YBa 2Cu 3O y (LPE-YBCO) ground plane, in particular, focusing on the fabrication of a suitable insulating layer on the ground plane and the post-annealing conditions to load oxygen to the ground plane. A (LaAlO 3) 0.3-(SrAl 0.5Ta 0.5O 3) 0.7 (LSAT) insulating film on the ground planes exhibited a conductance ranging from 10 -4 to 10 -8 S after deposition of an upper superconducting film, suggesting existence of some leak paths through the LSAT insulating layer. By introducing approximately 30 nm thick SrTiO 3 (STO) buffer layers on both side of the LSAT insulating layer. We reproducibly obtained a conductance lower than 10 -8 S. The dielectric constant of the STO/LSAT/STO layer was 32, which was slightly larger than that of the single LSAT layer. It was found that a very slow cooling rate of 1.0 °C/h in oxygen was needed to fully oxidize the ground plane through the STO/LSAT/STO insulating layers, while the oxidation time could be effectively reduced by introducing via holes in the insulating layer at an interval of 200 μm. Ramp-edge junctions on LPE-YBCO ground planes with STO/LSAT/STO insulating layers exhibited a 1 σ-spread in Ic of 8% for 100-junction series-arrays and a sheet inductance of 0.7 pH/□ at 4.2 K.

New method for introducing nanometer flux pinning centers into single domain YBCO bulk superconductors

NASA Astrophysics Data System (ADS)

Yang, W. M.; Wang, Miao

2013-10-01

Single domain YBCO superconductors with different additions of Bi2O3 have been fabricated by top seeded infiltration and growth process (TSIG). The effect of Bi2O3 additions on the growth morphology, microstructure and levitation force of the YBCO bulk superconductor has been investigated. The results indicate that single domain YBCO superconductors can be fabricated with the additions of Bi2O3 less than 2 wt%; Bi2O3 can be reacted with Y2BaCuO5 and liquid phase and finally form Y2Ba4CuBiOx(YBi2411) nanoscale particles; the size of the YBi2411 particles is about 100 nm, which can act as effective flux pinning centers. It is also found that the levitation force of single domain YBCO bulks is increasing from 13 N to 34 N and decreasing to 11 N with the increasing of Bi2O3 addition from 0.1 wt% to 0.7 wt% and 2 wt%. This result is helpful for us to improve the physical properties of REBCO bulk superconductors.

Electronic State Distributions of YBa2Cu3O7-x Laser Ablated Plumes

DTIC Science & Technology

2008-09-01

deposited on buffered metal substrates using gas phase techniques such as pulsed laser deposition (PLD) or metal -oxide chem- ical vapor deposition...along the desired current direction. This grain orientation has been successfully achieved by depositing YBCO on a metal tape substrate coated with a...Reeves, K. Lenseth, and V. Selvamanickam. “Texture Development and Superconducting Properties of YBCO Thick Films Deposited on Buffered Metal Substrates

Flux pinning in yttrium barium copper oxide coated conductors

NASA Astrophysics Data System (ADS)

Chen, Zhijun

High quality high-temperature-superconducting YBa2Cu 3O7-x (YBCO) films for industrial applications demand very high critical current densities Jc, which can only be achieved by strong three-dimensional (3D) pinning with deliberately introduced nano-precipitates. The purpose of this thesis is to provide an in-depth understanding of the 3D pinning in such YBCO films. In pulsed laser deposition (PLD) prepared YBCO films, a high density of anti-phase boundaries and stacking faults were found to be effective pinning defects for improving Jc in small fields. However, their failure to improve Jc at high fields shows that such naturally generated defects are not strong 3D pinning centers. A demonstration of strong 3D pinning was found in a metal organic chemical vapor deposition (MOCVD) grown YBCO coated conductor (CC) with a high density of (Y,Sm)2O3 nano-precipitates. We observed a significantly enhanced irreversibility field Hirr which, like other superconducting properties was independent of thickness, due to strong vortex-pin interactions. The advantage of 3D pinning was further illustrated by a bi-layer metalorganic deposition (MOD) grown YBCO CC with different 3D pinning structures in each layer. The Jc anisotropy of the bilayer was found to be the thickness-weighted sum of the anisotropy of the two individual layers, demonstrating an applicable way to tune the Jcanisotropy. Moreover, extensive low temperature and high magnetic field evaluations performed on an MOCVD CC with dense 3D (Y,Sm) 2O3 nano-precipitate pinning centers showed that its strong vortex pinning at 77 K correlated well to strong performance at 4.2 K too. YBCO films with quantitatively controlled artificial Y2O 3 nano-precipitates were also grown by PLD, and characterized over wide temperature and field ranges. Their Jc was found to be determined by the vortex pinning mediated by thermal fluctuation effects. In weak thermal-fluctuation situations Jc increased with decreasing effective precipitate spacing Lc. In other situations, Jc depends on both Lc and the size and elementary pinning strength of the nano-precipitates. In summary, this thesis presents detailed pinning studies on several differently grown YBCO films. Our results identify the optimum pinning structures in YBCO films and provide a systematic guidance for optimizing vortex pinning.

Critical current survival in the YBCO superconducting layer of a delaminated coated conductor

NASA Astrophysics Data System (ADS)

Feng, Feng; Fu, Qishu; Qu, Timing; Mu, Hui; Gu, Chen; Yue, Yubin; Wang, Linli; Yang, Zhirong; Han, Zhenghe; Feng, Pingfa

2018-04-01

A high-temperature superconducting coated conductor can be practically applied in electric equipment due to its favorable mechanical properties and critical current (I c) performance. However, the coated conductor can easily delaminate because of its poor stress tolerance along the thickness direction. It would be interesting to investigate whether the I c of the delaminated YBa2Cu3O7-δ (YBCO) layer can be preserved. In this study, coated conductor samples manufactured through the metal organic deposition route were delaminated by liquid nitrogen immersion. Delaminated samples, including the YBCO layer and silver stabilizer, were obtained. Delamination occurred inside the YBCO layer and near the YBCO-CeO2 interface, as suggested by the results of scanning electron microscopy (SEM) and x-ray diffraction. A scanning Hall probe system was employed to measure the I c distribution of the original sample and the delaminated sample. It was found that approximately 50% of the I c can be preserved after delamination, which was verified by I c measurements using the four-probe method. Dense and crack-free morphologies of the delaminated surfaces were observed by SEM, which accounts for the I c survival of the delaminated YBCO layer. The potential application of the delaminated sample in superconducting joints was discussed based on the oxygen diffusion estimation.

Investigation of thick PLD-GdBCO and ZrO2 doped GdBCO coated conductors with high critical current on PLD-CeO2 capped IBAD-GZO substrate tapes

NASA Astrophysics Data System (ADS)

Takahashi, K.; Kobayashi, H.; Yamada, Y.; Ibi, A.; Fukushima, H.; Konishi, M.; Miyata, S.; Shiohara, Y.; Kato, T.; Hirayama, T.

2006-09-01

In order to increase the critical current, Ic, we have fabricated thick GdBa2Cu3O7-δ (GdBCO) coated conductors (CCs) by the pulsed laser deposition (PLD) method on PLD-CeO2/ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO)/hastelloy metal substrate tapes. The highest critical current value was 522 A cm-1 for a thickness of 3.6 µm in self-field at 77 K. It was found that a low volume fraction of a-axis orientated grains was obtained in the thick GdBCO CCs, compared to YBa2Cu3O7-δ (YBCO) CCs. Consequently, the GdBCO CCs showed higher critical current density (Jc) than YBCO CCs in all thicknesses from 0.2 to 3.6 µm. Furthermore, we have succeeded in improving Ic in a magnetic field by the introduction of artificial pinning centres using a 5 mol% ZrO2 doped GdBCO target. In the measurement of the Ic dependence on the magnetic field angle, θ, Ic was much improved, especially at 0°, i.e., with the magnetic field parallel to the c-axis. The Ic value at 3 T was 59.5 A cm-1 at 0° and it showed a minimum of 42.3 A cm-1 at 82° for 2.28 µm thick CC. The minimum value in the angular dependence of Ic at 3 T was about five times higher than that of YBCO CC and two times higher than that of pure GdBCO CC.

Development of a thick GdBCO and ZrO 2-doped GdBCO film with a high critical current on a PLD-CeO 2/IBAD-GZO metal substrate

NASA Astrophysics Data System (ADS)

Kinoshita, A.; Takahashi, K.; Kobayashi, H.; Yamada, Y.; Ibi, A.; Fukushima, H.; Konishi, M.; Miyata, S.; Shiohara, Y.; Kato, T.; Hirayama, T.

2007-10-01

In order to obtain a high critical current, Ic, we have fabricated a thick GdBa2Cu3O7-x (GdBCO) film by the pulsed laser deposition (PLD) method on a PLD-CeO2/ion-beam assisted deposition (IBAD)-Gd2Zr2O7 (GZO)/hastelloy metal substrate. The film of a 3.6 μm thickness exhibited the highest critical current of 522 A/cm at self-field and at 77 K. It was found that a low volume fraction of a-axis oriented grains was obtained in the thick GdBCO films, compared to YBa2Cu3O7-x (YBCO) films. The GdBCO films showed a higher critical current density (Jc), than YBCO films in all thicknesses from 0.2 to 3.6 μm. Furthermore, we have improved Ic in a magnetic field by the introduction of artificial pinning centers using a 5 mol% ZrO2-doped GdBCO target. In the measurement of angular dependence of Ic, which was much improved at 0°, the magnetic field was parallel to the c-axis. The Ic value at 3 T was 59.5 A/cm at 0° and showed a minimum of 42.3 A/cm at 82° for the film of a 2.3 μm thickness. The minimum value at 3 T in angular dependence of Ic was about five times higher than that of the YBCO film and two times higher than that of pure the GdBCO film.

Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers

NASA Astrophysics Data System (ADS)

Gao, J.; Kang, L.; Wong, H. Y.; Cheung, Y. L.; Yang, J.

Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu2CuO4/YSZ (yttrium-stabilized ZrO2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu2CuO4/YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

NASA Technical Reports Server (NTRS)

Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

1997-01-01

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Pulsed laser deposition of thick BaHfO3-doped YBa2Cu307-δ films on highly alloyed textured Ni-W tapes

NASA Astrophysics Data System (ADS)

Sieger, M.; Hänisch, J.; Iida, K.; Gaitzsch, U.; Rodig, C.; Schultz, L.; Holzapfel, B.; Hühne, R.

2014-05-01

YBa2Cu3O7-δ (YBCO) films with a thickness of up to 3 μm containing nano-sized BaHfO3 (BHO) have been grown on Y2O3/Y-stabilized ZrO2/CeO2 buffered Ni-9at% W tapes by pulsed laser deposition (PLD). Structural characterization by means of X-ray diffraction confirmed that the YBCO layer grew epitaxial. A superconducting transition temperature Tc of about 89 K with a transition width of 1 K was determined, decreasing with increasing BHO content. Critical current density in self-field and at 0.3 T increased with increasing dopant level.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, M.; Lombardo, V.; Turrioni, D.

Helical solenoids that provide solenoid, helical dipole and helical gradient field components are designed for a helical cooling channel (HCC) proposed for cooling of muon beams in a muon collider. The high temperature superconductor (HTS), 12 mm wide and 0.1 mm thick YBCO tape, is used as the conductor for the highest-field section of HCC due to certain advantages, such as its electrical and mechanical properties. To study and address the design, and technological and performance issues related to magnets based on YBCO tapes, a short helical solenoid model based on double-pancake coils was designed, fabricated and tested at Fermilab.more » Splicing joints were made with Sn-Pb solder as the power leads and the connection between coils, which is the most critical element in the magnet that can limit the performance significantly. This paper summarizes the test results of YBCO tape and double-pancake coils in liquid nitrogen and liquid helium, and then focuses on the study of YBCO splices, including the soldering temperatures and pressures, and splice bending test.« less

Surface flux density distribution characteristics of bulk high- Tc superconductor in external magnetic field

NASA Astrophysics Data System (ADS)

Torii, S.; Yuasa, K.

2004-10-01

Various magnetic levitation systems using oxide superconductors are developed as strong pinning forces are obtained in melt-processed bulk. However, the trapped flux of superconductor is moved by flux creep and fluctuating magnetic field. Therefore, to examine the internal condition of superconductor, the authors measure the dynamic surface flux density distribution of YBCO bulk. Flux density measurement system has a structure with the air-core coil and the Hall sensors. Ten Hall sensors are arranged in series. The YBCO bulk, which has 25 mm diameter and 13 mm thickness, is field cooled by liquid nitrogen. After that, magnetic field is changed by the air-core coil. This paper describes about the measured results of flux density distribution of YBCO bulk in the various frequencies of air-core coils currents.

Crystal growth of YBCO coated conductors by TFA MOD method

NASA Astrophysics Data System (ADS)

Yoshizumi, M.; Nakanishi, T.; Matsuda, J.; Nakaoka, K.; Sutoh, Y.; Izumi, T.; Shiohara, Y.

2008-09-01

The crystal growth mechanism of TFA (trifluoroacetates)-MOD (metal organic deposition) derived YBa 2Cu 3O y has been investigated to understand the process for higher production rates of the conversion process. YBCO films were prepared by TFA-MOD on CeO 2/Gd 2Zr 2O 7/Hastelloy C276 substrates. The growth rates of YBCO derived from Y:Ba:Cu = 1:2:3 and 1:1.5:3 starting solutions were investigated by XRD and TEM analyses. YBCO growth proceeds in two steps of the epitaxial one from the substrate and solid state reaction. The overall growth rate estimated from the residual amounts of BaF 2 with time measured by XRD is proportional to a square root of P(H 2O). The trend was independent of the composition of starting solutions, however, the growth rate obtained from the 1:1.5:3 starting solutions was high as twice as that of 1:2:3, which could not be explained by the composition of BaF 2 included in the precursor films. On the other hand, the growth rate measured from the thickness of the YBCO quenched film at the same process time showed no difference between the samples of 1:2:3 and 1:1.5:3. The epitaxial growth rate of 1:1.5:3 was also the same as the overall growth rate of that, which means there was no solid state reaction to form YBCO after the epitaxial growth. The YBCO growth mechanism was found to be as follows; YBCO crystals nucleate at the surface of the substrate and epitaxially grow into the precursor by layer-by-layer by a manner with trapping unreacted particles. The amounts of YBCO and the unreacted particles trapped in the YBCO film are independent of the composition of the starting solution in this step. Unreacted particles react with each other to form YBCO and pores by solid state reaction as long as there is BaF 2 left in the film. The Ba-poor starting solution gives little BaF 2 left in the film and so the solid state reaction is completed within a short time, resulting in the fast overall growth rate.

Platinum group metals as flux pinning additions in screen printed superconducting YBa 2Cu 3O 7-δ thick films

NASA Astrophysics Data System (ADS)

Langhorn, J.; Bi, Y. J.; Abell, J. S.

1996-02-01

Platinum group metal additions made to thick films of YBCO have induced significant improvements in the superconducting properties, in particular critical current densities ( Jc). Values in excess of 7 × 10 3 A cm -2 at 77 K and zero applied field have been measured. Optical and transmission electron microscopy have shown a homogeneous distribution of sub-micron sized, and larger highly anisotropic 211, believed to result from a reaction between Pt and YBCO to create nucleation sites for 211 precipitates. Indirect supporting thermal analysis evidence for this reaction is presented. An increased density of dislocations associated with the {123}/{211} interface suggests that refined 211 precipitates may act as heterogeneous nucleation sites for flux pinning defects. Similar effects have been observed for additions of other platinum group metals (Rh, Pd).

Microstructure and property correlations in high-temperature superconductors

NASA Astrophysics Data System (ADS)

Kalyanaraman, Ramakrishnan

1998-11-01

The work in this dissertation is intended at developing high quality device gradefilms of the high temperature (high-Tsbc) superconductor, Yttrium Barium Copper Oxide (YBCO), on MgO(001) substrates. Three approaches have been used to achieve the above goal, (i) The use of a SrTiOsb3 buffer layer, (ii) The use of Ag to enhance the growth of YBCO films and (iii) Investigation of the atomic structure-property correlations of low-angle grain boundaries in these films. Thin film heterostructures of YBCO/MgO and YBCO/SrTiOsb3/MgO were fabricated by pulsed laser deposition (PLD), using a 248 nm KrF excimer laser. Analysis of the structure and measurement of superconducting properties of the films were carried out to optimize the suitable conditions under each approach. The key findings were, (i) Single crystal-like SrTiOsb3 buffer layers can be grown and they give the highest JsbcYBCO films, (ii) An in-depth study of the role of Ag showed that it enhanced film growth of YBCO thereby improving its quality, and (iii) Low-angle boundaries in YBCO/MgO occur with two probable habit planes and the Jsbcs across them differ slightly. A systematic investigation of the crystalline quality of the SrTiOsb3 films deposited by PLD was performed as a function of oxygen partial pressure (pOsb2) and substrate temperature (Tsbc). The highest quality films were grown in the pOsb2 range of 0.1-1 mTorr at 750sp°C. The films had as-deposited x-ray diffraction rocking curve (omega) values of {˜}0.70sp° and Rutherford backscattering channeling yields (chisbmin) of 5% as compared to omega˜1.40sp° and chisbmin˜14% for the film deposited in 100 mTorr of pOsb2. The x-ray phi-scans showed epitaxial cube-on-cube alignment of the SrTiOsb3 films on MgO(001) substrates. Thermal annealing of the SrTiOsb3 films further improved the quality, and the 1 mTorr films gave omega{˜}0.13sp° and chisbmin˜2.0%. Transmission electron microscopy investigations (TEM) of these films showed that the defects in films grown in the pOsb2 range of 0.5-1 mTorr consisted mainly of dislocations and sub-grain boundaries, while those grown in the higher pOsb2 contained numerous low-angle grain boundaries. YBCO films grown on the best SrTiOsb3 buffer layers showed reproducible Jsbcs of {˜}5.5× 10sp6 amps/cmsp2 at 77K and Tsbcs of 88-91K. The YBCO films was observed to grow epitaxially on SrTiOsb3 with (110) sbPYBCO//(110) sbSriTiO3 and (001) sbYBCO//(001) sbSrTiO3{*}chisbmin for the best YBCO film was ˜2.8%. The crystalline quality of the SrTiOsb3 and YBCO films developed are amongst the highest reported so far. Composite targets of Ag+YBCO were used to grow YBCO films using PLD. Using XRD and Tsbc measurements clear evidence for enhanced oxygenation of the YBCO films was shown. Detailed TEM investigation of grain boundaries in YBCO/MgO(001) showed that the low-angle grain boundaries in YBCO are equally likely to have (100) or (110) habit planes. (Abstract shortened by UMI.)

Processing of large grain Y-123 superconductors with pre-defined porous structures

NASA Astrophysics Data System (ADS)

Sudhakar Reddy, E.; Babu, N. Hari; Shi, Y.; Cardwell, D. A.; Schmitz, G. J.

2005-02-01

Porous superconductors have inherent cooling advantages over their bulk counterparts and, as a result, are emerging as an important class of materials for practical applications. Single-domain Y-Ba-Cu-O (YBCO) foams processed with a pre-defined, open porous structure, for example, have significant potential for use as elements in resistive superconducting fault current limiters. In this case, the interconnected porosity is ideal for producing reinforced composites with improved mechanical and heat conducting properties. In this paper we describe a few simple methods for fabricating large grain YBCO superconductors with various predefined porous structures via an infiltration process from tailored, porous Y2BaCuO5 (Y-211) pre-forms manufactured by a variety of techniques, including slurry-coating of standard polyurethane foams to replicate their structure. Foams produced by this method typically have a strut thickness of a few hundred µm and pore sizes ranging from 10 to 100 pores per inch (PPI). Foams with increased strut thickness of up to millimetre dimensions can be produced by embedding organic ball spacers within the Y-211 pre-form followed by a burn-out and sintering process. Single-domain YBCO bulk materials with cellular and pre-defined 3D interconnected porosity may be produced by a similar process using tailored wax structures in Y-211 castings.

Trimming the electrical properties on nanoscale YBa2Cu3O7-x constrictions by focus ion beam technique

NASA Astrophysics Data System (ADS)

Lam, Simon K. H.; Bendavid, Avi; Du, Jia

2017-09-01

High temperature superconducting (HTS) nanostructure has a great potential in photon sensing at high frequency due to its fast recovery time. For maximising the coupling efficiency, the normal resistance of the nanostructure needs to be better matched to that of the thin-film antenna, which is typically few tens of ohm. We report on the fabrication of nanoscale high temperature superconducting YBa2Cu3O7-x (YBCO) constrictions using Gallium ion focus ion beam (FIB) technique. The FIB has been used to both remove the YBCO in lateral dimension and also tune its critical current and normal resistance by a combination of surface etching and implantation on the YBCO top layer. High critical current density of 2.5 MA/cm2 at 77 K can be obtained on YBCO nanobridges down to 100 nm in width. Subsequent trimming of the naobridges can lead to a normal resistance value over 50 Ω. Simulation of the Ga ion trajectory has also been performed to compare the measurement results. This method provides a simple step of fabricating nanoscale superconducting detectors such as hot electron bolometer.

Structural and electrical properties of epitaxial YBCO films on Si (Abstract Only).

NASA Astrophysics Data System (ADS)

Fork, David K.; Barrera, A.; Phillips, Julia M.; Newman, N.; Fenner, David B.; Geballe, Theodore H.; Connell, G. A. N.; Boyce, James B.

1991-03-01

Efforts to grow high quality films of YBCO on Si have been complicated by factors discussed in Ref. 1, chief among them being the reaction between YBCO and Si, which is damaging even at 550 C. This is well below the customary temperatures for YBCO film growth. To avoid the reaction problem, epitaxial YBCO films were grown on Si (100) using an intermediate buffer layer of yttria-stabilized zirconia (YSZ).2 Both layers are grown via an entirely in situ process by pulsed laser deposition (PLD). Although the buffer layer prevents reaction, another problem arises; the large difference in thermal expansion coefficients between silicon and YBCO causes strain at room temperature. Thin (<500 A) YBCO films are unrelaxed and under tensile strain with a distorted unit cell. Thicker films are cracked and have poorer electrical properties. The thermal strain may be reduced by growing on silicon-on-sapphire (SOS) rather than silicon.3 This allows the growth of films of arbitrary thickness. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. The normal state resistivity is 250-300 i-cm at 300 K; the critical temperature, Tc (R=0), is 86-88 K with a transition width (ATc) of I K. Critical current densities (J)°f 2x107 A/cm2 at 4.2 K and >2x106 A/cm2 at 77 K have been achieved. In addition, the surface resistance of a YBCO film on SOS was measured against Nb at 4.2 K. At 10 GHz, a value of 45 was obtained. This compares favorably to values reported for LaAlO3. Application of this technology to produce reaction patterned microstrip lines has been tested.4 This was done by ion milling away portions of the YSZ buffer layer prior to the YBCO deposition. YBCO landing on regions of exposed Si reacts to form an insulator. This technique was used to make 3 micron lines 1.5 mm long. The resulting structure had a Jc of l.6xl06 A/cm2 at 77 K. Isolation of separate structures exceeded 20 M. Several advantages of this technique are that no solvents, etchants or photoresist come into contact with the YBCO, hence this technique has a potential for operational-asgrown devices. In summary, it is now possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO3 and LaAlO3. Preliminary measurements of microwave properties appear promising. We thank Bruce Lairson for help obtaining magnetization data and Richard Johnson, Steve Ready and Lars-Erik Swartz for technical assistance. This work benefits from AFOSR (F49620-89-C-0017). DBF received support from NSF (DMR- 8822353). DKF acknowledges the AT&T scholarship.

Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer

NASA Technical Reports Server (NTRS)

Johannes, Daniel; Webber, Robert

2013-01-01

Adiabatic demagnetization refrigerators (ADR) are operated in space to cool detectors of cosmic radiation to a few 10s of mK. A key element of the ADR is a superconducting magnet operating at about 0.3 K that is continually energized and de-energized in synchronism with a thermal switch, such that a piece of paramagnetic salt is alternately warm in a high magnetic field and cold in zero magnetic field. This causes the salt pill or refrigerant to cool, and it is able to suck heat from an object, e.g., the sensor, to be cooled. Current has to be fed into and out of the magnets from a dissipative power supply at the ambient temperature of the spacecraft. The current leads that link the magnets to the power supply inevitably conduct a significant amount of heat into the colder regions of the supporting cryostat, resulting in the need for larger, heavier, and more powerful supporting refrigerators. The aim of this project was to design and construct high-temperature superconductor (HTS) leads from YBCO (yttrium barium copper oxide) composite conductors to reduce the heat load significantly in the temperature regime below the critical temperature of YBCO. The magnet lead does not have to support current in the event that the YBCO ceases to be superconducting. Cus - tomarily, a normal metal conductor in parallel with the YBCO is a necessary part of the lead structure to allow for this upset condition; however, for this application, the normal metal can be dispensed with. Amorphous silicon dioxide is deposited directly onto the surface of YBCO, which resides on a flexible substrate. The silicon dioxide protects the YBCO from chemically reacting with atmospheric water and carbon dioxide, thus preserving the superconducting properties of the YBCO. The customary protective coating for flexible YBCO conductors is silver or a silver/gold alloy, which conducts heat many orders of magnitude better than SiO2 and so limits the use of such a composite conductor for passing current across a thermal gradient with as little flow of heat as possible to make an efficient current lead. By protecting YBCO on a flexible substrate of low thermal conductivity with SiO2, a thermally efficient and flexible current lead can be fabricated. The technology is also applicable to current leads for 4 K superconducting electronics current biasing. A commercially available thin-film YBCO composite tape conductor is first stripped of its protective silver coating. It is then mounted on a jig that holds the sample flat and acts as a heat sink. Silicon dioxide is then deposited onto the YBCO to a thickness of about 1 micron using PECVD (plasma-enhanced chemical vapor deposition), without heating the YBCO to the point where degradation occurs. Since SiO2 can have good high-frequency electrical properties, it can be used to coat YBCO cable structures used to feed RF signals across temperature gradients. The prime embodiment concerns the conduction of DC current across the cryogenic temperature gradient. The coating is hard and electrically insulating, but flexible.

High speed production of YBCO precursor films by advanced TFA-MOD process

NASA Astrophysics Data System (ADS)

Ichikawa, H.; Nakaoka, K.; Miura, M.; Sutoh, Y.; Nakanishi, T.; Nakai, A.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

2009-10-01

YBa 2Cu 3O 7-y (YBCO) long tapes derived from the metal-organic deposition (MOD) method using the starting solution containing trifluoroacetate (TFA) have been developed with high critical currents ( I c) over 200 A/cm-width. However, high speed production of YBCO films is simultaneously necessary to satisfy the requirements of electric power device applications in terms of cost and the amounts of the tapes. In this work, we developed a new TFA-MOD starting solution using F-free salt of Y, TFA salt of Ba and Cu-Octylate for application to the coating/calcination process and discussed several issues by using the Multi-turn (MT) Reel-to-Reel (RTR) system calcination furnace for the purpose of high throughput without degradation of the properties. The coating system was improved for uniform deposition qualities in both longitudinal and transversal directions. YBCO films using the new starting solution at the traveling rate of 10 m/h in coating/calcination by the MT-RTR calcination furnace showed the values of the critical current density of 1.6 MA/cm 2 as thick as 1.5 μm at 77 K under the self fields after firing at the high heating rate in the crystallization.

Development of coated conductors by inclined substrate deposition

NASA Astrophysics Data System (ADS)

Balachandran, U.; Ma, B.; Li, M.; Fisher, B. L.; Koritala, R. E.; Miller, D. J.; Dorris, S. E.

2003-10-01

Inclined substrate deposition (ISD) offers the potential for rapid production of high-quality biaxially textured buffer layers suitable for YBa 2Cu 3O 7- δ (YBCO)-coated conductors. We have grown biaxially textured magnesium oxide (MgO) films on Hastelloy C276 (HC) substrates by ISD at deposition rates of 20-100 Å/s. Scanning electron microscopy of the ISD MgO films showed columnar grain structures with a roof-tile-shaped surface. X-ray pole figure analysis revealed that the c-axis of the ISD MgO films is titled at an angle ≈32° from the substrate normal. A small full-width at half maximum of ≈9° was observed for the φ-scan of MgO films. YBCO films were grown on ISD MgO buffered HC substrates by pulsed laser deposition and were determined to be biaxially aligned with the c-axis parallel to the substrate normal. The orientation relationship between the ISD template and the top YBCO film was investigated by X-ray pole figure analysis and transmission electron microscopy. A transport critical current density of Jc=5.5×10 5 A/cm 2 at 77 K in self-field was measured on a YBCO film that was 0.46-μm thick, 4-mm wide, 10-mm long.

Fabrication of sensitive high Tc bolometers

NASA Technical Reports Server (NTRS)

Nahum, Michael; Verghese, S.; Hu, Qing; Richards, Paul L.; Char, K.; Newman, N.; Sachtjen, Scott A.

1990-01-01

The rapid change of resistance with temperature of high quality films of high T sub c superconductors can be used to make resistance thermometers with very low temperature noise. Measurements on c-axis yttrium barium copper oxide (YBCO) films have given a spectral intensity of temperature noise less than 4 times 10(exp -8) K/Hz(exp 1/2) at 10 Hz. Consequently, the opportunity exists to make useful bolometric infrared detectors that operate near 90 K which can be cooled with liquid nitrogen. The fabrication and measurement of two bolometer architectures are discussed. The first is a conventional bolometer which consists of a 3000 A thick YBCO film deposited in situ by laser ablation on top of a 500 A thick SrTiO3 thickness and diced into 1x1 mm(exp 2) bolometer chips. Gold black smoke was used as the radiation absorber. The voltage noise was less than the amplifier noise when the film was current biased. Optical measurements gave an NEP of 5 times 10(exp -11) W/Hz(exp 1/2) at 10 Hz. The second architecture is that of an antenna-coupled microbolometer which consists of a small (5x10 cubic microns) YBCO film deposited directly on a bulk substrate with a low thermal conductance (YSZ) and an impedance matched planar lithographed spiral or log-periodic antenna. This structure is produced by standard photolithographic techniques. Measurements gave an electrical NEP of 4.7 times 10(exp -12) W/Hz(exp 1/2) at 10 kHz. Measurements of the optical efficiency are in progress. The measured performance of both bolometers will be compared to other detectors operating at or above liquid nitrogen temperatures so as to identify potential applications.

Atomic and electronic structures of BaHfO3-doped TFA-MOD-derived YBa2Cu3O7-δ thin films

NASA Astrophysics Data System (ADS)

Molina-Luna, Leopoldo; Duerrschnabel, Michael; Turner, Stuart; Erbe, Manuela; Martinez, Gerardo T.; Van Aert, Sandra; Holzapfel, Bernhard; Van Tendeloo, Gustaaf

2015-11-01

Tailoring the properties of oxide-based nanocomposites is of great importance for a wide range of materials relevant for energy technology. YBa2Cu3O7-δ (YBCO) superconducting thin films containing nanosized BaHfO3 (BHO) particles yield a significant improvement of the magnetic flux pinning properties and a reduced anisotropy of the critical current density. These films were prepared by chemical solution deposition (CSD) on (100) SrTiO3 (STO) substrates yielding critical current densities up to 3.6 MA cm-2 at 77 K and self-field. Transport in-field J c measurements demonstrated a high pinning force maximum of around 6 GN/m3 for a sample annealed at T = 760 °C that has a doping of 12 mol% of BHO. This sample was investigated by scanning transmission electron microscopy (STEM) in combination with electron energy-loss spectroscopy (EELS) yielding strain and spectral maps. Spherical BHO nanoparticles of 15 nm in size were found in the matrix, whereas the particles at the interface were flat. A 2 nm diffusion layer containing Ti was found at the YBCO (BHO)/STO interface. Local lattice deformation mapping at the atomic scale revealed crystal defects induced by the presence of both sorts of BHO nanoparticles, which can act as pinning centers for magnetic flux lines. Two types of local lattice defects were identified and imaged: (i) misfit edge dislocations and (ii) Ba-Cu-Cu-Ba stacking faults (Y-248 intergrowths). The local electronic structure and charge transfer were probed by high energy resolution monochromated electron energy-loss spectroscopy. This technique made it possible to distinguish superconducting from non-superconducting areas in nanocomposite samples with atomic resolution in real space, allowing the identification of local pinning sites on the order of the coherence length of YBCO (˜1.5 nm) and the determination of 0.25 nm dislocation cores.

YBCO microbolometer operating below Tc - A modelization based on critical current-temperature dependence

NASA Astrophysics Data System (ADS)

Robbes, D.; Langlois, P.; Dolabdjian, C.; Bloyet, D.; Hamet, J. F.; Murray, H.

1993-03-01

Using careful measurements of the I-V curve of a YBCO thin-film microbridge under light irradiation at 780 nm and temperature close to 77 K, it is shown that the critical current versus temperature dependence is a good thermometer for estimating bolometric effects in the film. A novel dynamic voltage bias is introduced which directly gives the device current responsitivity and greatly reduces risks of thermal runaway. Detectivity is very low but it is predicted that a noise equivalent temperature of less than 10 exp -7 K/sq rt Hz would be achievable in a wide temperature range (10-80 K), which is an improvement over thermometry at the resistive transition.

Scientific Presentations on Superconductivity from 2002-2005

DTIC Science & Technology

2006-01-01

00 Dark-field reflection, using 211 diffraction vector Bright-field transmission (2111.6nm/1236.6nm)x35, ~ 80 sec interval • 211 Density ~ 3x1011...1.8.1 2b.1.9 High Resolution SEM Figure 2b.1.9.1 Y211/YBCO film on LAO (PV43D) At 77K and at 3T magnetic feild 0 0.2 0.4 0.6 0.8 1 1.2

Final Report: MATERIALS, STRANDS, AND CABLES FOR SUPERCONDUCTING ACCELERATOR MAGNETS [Grant Number DE-SC0010312

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sumption, Mike D.; Collings, Edward W.

2014-10-29

Our program consisted of the two components: Strand Research and Cable Research, with a focus on Nb3Sn, Bi2212, and YBCO for accelerator magnet applications. We demonstrated a method to refine the grains in Nb3Sn by a factor of two, reaching 45 nm grain sizes, and layer Jcs of 6 kA/mm2 at 12 T. W also measured conductor magnetization for field quality. This has been done both with Nb3Sn conductor, as well as Bi:2212 strand. Work in support of quench studies of YBCO coils was also performed. Cable loss studies in Nb3Sn focused on connecting and comparing persistent magnetization and couplingmore » magnetization for considering their relative impact on HEP machines. In the area of HTS cables, we have investigated both the quench in multistrand YBCO CORC cables, as well as the magnetization of these cables for use in high field magnets. In addition, we examined the magnetic and thermal properties of large (50 T) solenoids.« less

Fabrication of YBa2Cu3O7 twin-boundary-junction dc SQUID by using a focused-ion-beam pattern technique

NASA Astrophysics Data System (ADS)

Lee, Sung Hoon; Lee, Soon-Gul

2017-09-01

We have fabricated YBa2Cu3O7 (YBCO) dc SQUIDs containing nanobridges across twin boundaries of LaAlO3 (LAO) substrates as Josephson elements by using a focused ion beam (FIB) etching method and measured their transport properties. The beam energy was 30 keV and the current was 1.5 pA for the nanobridge pattern. Each bridge with a nominal width of 200 nm crossed a twin boundary in the (100) direction. The SQUID loop had a 10 μm × 10 μm hole with a 5.7 μm average linewidth. The SQUID voltage showed modulations in response to the external flux with a maximum modulation depth of 350 μV at 77.0 K. HR-XRD spectra showed that the epitaxially grown YBCO film was twinned in commensurate with the twinning of the LAO substrate. Tilting of the c-axis of YBCO across the twin boundary is believed to play a role as a tunnel barrier.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

A comparison of superconductor and manganin technology for electronic links used in space mission applications

NASA Technical Reports Server (NTRS)

Caton, R.; Selim, R.; Buoncristiani, A. M.

1992-01-01

The electronic link connecting cryogenically cooled radiation detectors to data acquisition and signal processing electronics at higher temperatures contributes significantly to the total heat load on spacecraft cooling systems that use combined mechanical and cryogenic liquid cooling. Using high transition temperature superconductors for this link has been proposed to increase the lifetime of space missions. Herein, several YBCO (YBa2Cu3O7) superconductor-substrate combinations were examined and total heat loads were compared to manganin wire technology in current use. Using numerical solutions to the heat-flow equations, it is shown that replacing manganin technology with YBCO thick film technology can extend a 7-year mission by up to 1 year.

Creation of high-pinning microstructures in post production YBCO coated conductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Welp, Ulrich; Miller, Dean J.; Kwok, Wai-Kwong

A method comprising irradiating a polycrystalline rare earth metal-alkaline earth metal-transition metal-oxide superconductor layer with protons having an energy of 1 to 6 MeV. The irradiating process produces an irradiated layer that comprises randomly dispersed defects with an average diameter in the range of 1-10 nm.

Role of nano and micron-sized inclusions on the oxygen controlled preform optimized infiltration growth processed YBCO superconductors

NASA Astrophysics Data System (ADS)

Pavan Kumar Naik, S.; Bai, V. Seshu

2017-02-01

In the present work, with the aim of improving the local flux pinning at the unit cell level in the YBa2Cu3O7-δ (YBCO) bulk superconductors, 20 wt% of nanoscale Sm2O3 and micron sized (Nd, Sm, Gd)2BaCuO5 secondary phase particles were added to YBCO and processed in oxygen controlled preform optimized infiltration growth process. Nano Dispersive Sol Casting method is employed to homogeneously distribute the nano Sm2O3 particles of 30-50 nm without any agglomeration in the precursor powder. Microstructural investigations on doped samples show the chemical fluctuations as annuli cores in the 211 phase particles. The introduction of mixed rare earth elements at Y-site resulted in compositional fluctuations in the superconducting matrix. The associated lattice mismatch defects have provided flux pinning up to large magnetic fields. Magnetic field dependence of current density (Jc(H)) at different temperatures revealed that the dominant pinning mechanism is caused by spatial variations of critical temperatures, due to the spatial fluctuations in the matrix composition. As the number of rare earth elements increased in the YBCO, the peak field position in the scaling of the normalized pinning force density (Fp/Fp max) significantly gets shifted towards the higher fields. The curves of Jc(H) and Fp/Fp max at different temperatures clearly indicate the LRE substitution for LRE' or Ba-sites for δTc pinning.

Mixed pinning landscape in nanoparticle-introduced YGdBa2Cu3Oy films grown by metal organic deposition

NASA Astrophysics Data System (ADS)

Miura, M.; Maiorov, B.; Baily, S. A.; Haberkorn, N.; Willis, J. O.; Marken, K.; Izumi, T.; Shiohara, Y.; Civale, L.

2011-05-01

We study the field (H) and temperature (T) dependence of the critical current density (Jc) and irreversibility field (Hirr) at different field orientations in Y0.77Gd0.23Ba2Cu3Oy with randomly distributed BaZrO3 nanoparticles (YGdBCO+BZO) and YBa2Cu3Oy (YBCO) films. Both MOD films have large RE2Cu2O5 (225) nanoparticles (˜80 nm in diameter) and a high density of twin boundaries (TB). In addition, YGdBCO+BZO films have a high density of BZO nanoparticles (˜25 nm in diameter). At high temperatures (T > 40 K), the superconducting properties, such as Jc, Hirr, and flux creep rates, are greatly affected by the BZO nanoparticles, while at low temperatures the superconducting properties of both the YBCO and YGdBCO+BZO films show similar field and temperature dependencies. In particular, while the Jc of YBCO films follow a power-law dependence (∝H-α) at all measured T, this dependence is only followed at low T for YGdBCO+BZO films. As a function of T, the YGdBCO+BZO film shows Jc(T,0.01T)~[1-(T/Tc)2]n with n ˜ 1.24 ± 0.05, which points to “δTc pinning.” We analyze the role of different types of defects in the different temperature regimes and find that the strong pinning of the BZO nanoparticles yields a higher Hirr and improved Jc along the c axis and at intermediate orientations at high T. The mixed pinning landscapes due to the presence of disorder of various dimensionalities have an important role in the improvement of in-field properties.

High Temperature Superconductor Josephson Weak Links

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Barner, J. B.; Foote, M. C.; Vasquez, R. C.

1993-01-01

High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

Thin Film Multilayer Conductor/Ferroelectric Tunable Microwave Components for Communication Applications

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Romanofsky, Robert R.; VanKeuls, Frederick W.; Mueller, Carl H.; Treece, Randolph E.; Rivkin, Tania V.

1997-01-01

High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.

Hysteretic Vortex-Matching Effects in High-Tc Superconductors with Nanoscale Periodic Pinning Landscapes Fabricated by He Ion-Beam Projection

NASA Astrophysics Data System (ADS)

Zechner, G.; Jausner, F.; Haag, L. T.; Lang, W.; Dosmailov, M.; Bodea, M. A.; Pedarnig, J. D.

2017-07-01

Square arrays of submicrometer columnar defects in thin YBa2 Cu3 O7 -δ (YBCO) films with spacings down to 300 nm are fabricated by a He ion-beam projection technique. Pronounced peaks in the critical current and corresponding minima in the resistance demonstrate the commensurate arrangement of flux quanta with the artificial pinning landscape, despite the strong intrinsic pinning in epitaxial YBCO films. While these vortex-matching signatures are exactly at the predicted values in field-cooled experiments, they are displaced in zero-field-cooled, magnetic-field-ramped experiments, conserving the equidistance of the matching peaks and minima. These observations reveal an unconventional critical state in a cuprate superconductor with an artificial, periodic pinning array. The long-term stability of such out-of-equilibrium vortex arrangements paves the way for electronic applications employing fluxons.

X-ray photoelectron spectroscopy characterization of a nonsuperconducting Y-Ba-Cu-O superconductor-normal-metal-superconductor barrier material

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

1992-01-01

A film of a novel nonsuperconducting Y-Ba-Cu-O (YBCO) barrier material was grown using conditions similar to those reported by Agostinelli et al. (1991) for forming a cubic semiconducting (c-YBCO) phase, and the material was characterized using X-ray photoelectron spectroscopy (XPS). A comparison of the XPS spectra of this material to those obtained from the orthorhombic and tetragonal phases of YBCO (o-YBCO and t-YBCO, respectively) showed that the barrier material had spectral characteristics different from those of o-YBCO and t-YBCO, particularly in the O 1s region. Features associated with the Cu-O chain and surface-reconstructed Cu-O planes were absent, consistent with expectations for the simple perovskite crystal structure of c-YBCO proposed by Agostinelli et al.

A new approach to the current distribution in field cooled superconductors disks

NASA Astrophysics Data System (ADS)

Bernstein, P.; Colson, L.; Dupont, L.; Noudem, J.

2018-01-01

The Bean model considers that in field cooled superconducting cylinders with diameter R, the currents flow over all the thickness of the superconductor along circular paths, the minimum radius of which depends on the magnetizing field and the critical current density. A combination of trapped field and levitation force measurements reported recently has shown, however, that in YBCO and MgB2 disks the current flows in fact in a restricted region with thickness t of the superconductor. In this contribution, from measurements carried out on two YBCO and two MgB2 disks, we report the dependence on temperature of t and J p, the current density in this region, as well as that of the field trapped by the samples. The results confirm that t decreases as the temperature decreases. This behaviour is ascribed to the conservation of the magnetic energy stored in the superconductor, which depends on the magnetizing source and not on the measurement temperature. As a consequence, t behaves as {{J}{{p}}}-2/3, while the field trapped along the axis of the cylinder behaves as {{J}{{p}}}1/3. These claims are substantiated by the experimental results. The possibility that J p is equal to the depairing current is investigated.

Flux pinning properties of YBa2Cu3O7-δ thin films containing a high density of nanoprecipitates: A comparative study to reveal size effects

NASA Astrophysics Data System (ADS)

Yamasaki, Hirofumi; Yamada, Hiroshi

2017-11-01

Temperature dependence of critical current density Jc(H, T) was measured in moderate magnetic fields (H ⊥ film) in two thermally co-evaporated YBa2Cu3O7-δ (YBCO) thin films (A, B) and two YBCO films (C, D) deposited using a pulsed-laser deposition method. All sample films were grown epitaxially with the c-axis perpendicular to the surface of a single-crystalline substrate. Transmission electron microscopy observation revealed that these four films contained a high density of nanoprecipitates with typical sizes of 3.6 - 5.0 nm (A), 5.0 - 7.1 nm (B), 7.0 - 10.1 nm (C) and 8.7 - 14.3 nm (D). Films A and B contained very fine nanoprecipitates, whose typical diameters Dtyp are smaller than double the estimated Ginzburg-Landau coherence length 2ξab at T = 77 K, and exhibited a steep increase of Jc with decreasing temperature. Whereas, film D, which contained relatively large nanoprecipitates (Dtyp > 2ξab at T ≤ 70 K), exhibited a gradual increase in Jc. This led to a remarkable crossing of the Jc(T) curves. The temperature dependence of Jc(H//c) under a fixed magnetic field is approximated by Jc ∼ (1 - T/Tc)m(1 + T/Tc)2 where the index m is larger for films containing finer precipitates; that is, m(A) > m(B) > m(C) > m(D). This means that finer nanoprecipitates generally cause steeper Jc increase at low temperatures, which is the origin of the observed crossing phenomenon. The experimental results are reasonably explained by several theoretical models based on the direct summation of elementary pinning forces fp calculated by core pinning interactions.

Fabrication and characterization of hybrid Nb-YBCO dc SQUIDs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frack, E.K.; Drake, R.E.; Patt, R.

This paper reports on the fabrication of hybrid low T{sub c}/high T{sub c} dc SQUIDs of two flavors. The first kind utilizes niobium tunnel junctions and a YBCO film strip as the most inductive portion of the SQUID loop. This configuration allows a direct measurement of the inductance of the YBCO microstrip from which the effective penetration depth can be calculated. The successful fabrication of these SQUIDs has required 1. superconducting Nb-to-YBCO contacts, 2. deposition and patterning of an SiO{sub 2} insulation layer over YBCO, and 3. selective patterning of niobium and SiO{sub 2} relative to YBCO. All these processmore » steps are pertinent to the eventual use of YBCO thin films in electronic devices.« less

Flux Pinning Enhancement in YBa2Cu3O7-x Films for Coated Conductor Applications (Postprint)

DTIC Science & Technology

2012-02-01

the nanocolumns with a certain constant diameter. Since BSO and YBCO are both perovskites, they tend to grow along the c - axis perpendicular to LAO ...20 0 20 40 60 80 100 YBCO+BaSnO 3 / LAO YBCO/MS-6 YBCO+BaSnO 3 /MS-6 J c /J c( h // a b ) Angle (Degs) H//C H//ab Figure 5.18 Transport current...density data of YBCO+BSO fi lm on a LaAlO 3 and a buffered metallic substrate as compared to YBCO fi lm on a metallic substrate. ( LAO = LaAlO 3 , MS

Origin of photovoltaic effect in superconducting YBa2Cu3O6.96 ceramics

PubMed Central

Yang, F.; Han, M. Y.; Chang, F. G.

2015-01-01

We report remarkable photovoltaic effect in YBa2Cu3O6.96 (YBCO) ceramic between 50 and 300 K induced by blue-laser illumination, which is directly related to the superconductivity of YBCO and the YBCO-metallic electrode interface. There is a polarity reversal for the open circuit voltage Voc and short circuit current Isc when YBCO undergoes a transition from superconducting to resistive state. We show that there exists an electrical potential across the superconductor-normal metal interface, which provides the separation force for the photo-induced electron-hole pairs. This interface potential directs from YBCO to the metal electrode when YBCO is superconducting and switches to the opposite direction when YBCO becomes nonsuperconducting. The origin of the potential may be readily associated with the proximity effect at metal-superconductor interface when YBCO is superconducting and its value is estimated to be ~10–8 mV at 50 K with a laser intensity of 502 mW/cm2. Combination of a p-type material YBCO at normal state with an n-type material Ag-paste forms a quasi-pn junction which is responsible for the photovoltaic behavior of YBCO ceramics at high temperatures. Our findings may pave the way to new applications of photon-electronic devices and shed further light on the proximity effect at the superconductor-metal interface. PMID:26099727

Development of an YBCO coil with SSTC conductors for high field application

NASA Astrophysics Data System (ADS)

Shi, Y.; Liu, H. J.; Liu, F.; Tan, Y. F.; Jin, H.; Yu, M.; Lei, L.; Guo, L.; Hong, Z. Y.

2018-07-01

With the continuous reduction of the production costs and improvement of the transport performance, YBCO coated conductor is the most promising candidate for the high field magnet application due to its high irreversibility field and strong mechanical properties. Presently a stable production capacity of the YBCO conductors has been achieved by Shanghai Superconducting Technology Co., Ltd (SSTC) in China. Therefore, the demand in high field application with YBCO conductors is growing in China. This paper describes the design, fabrication and preliminary experiment of a solenoid coil with YBCO conductors supplied by SSTC to validate the possibility of high field application. Four same double pancakes were manufactured and assembled for the YBCO coil where the outer diameter and height was 54.3 and 48 mm respectively to match the dimensional limitation of the 14 T background magnets. The critical current (Ic) of YBCO conductors was obtained by measuring as a function of the applied field perpendicular to the YBCO conductor surface which provides the necessary input parameters for preliminary performance evaluation of the coil. Finally the preliminary test and discussion at 77 and 4.2 K were carried out. The consistency of four double pancakes Ic was achieved. The measured results indicate that the fabrication technology of HTS coil is reliable which gives the conference for the in-field test in high field application. This YBCO coil is the first demonstration of the SSTC YBCO coated conductors.

Transport properties of YBa2Cu3Ox /La0.67Sr0.33MnO3 nanostrips and YBa2Cu3Ox/La0.67Sr0.33MnO3/YBa2Cu3Ox nanojunctions

NASA Astrophysics Data System (ADS)

Štrbík, V.; Beňačka, Š.; Gaži, Š.; Španková, M.; Šmatko, V.; Chromik, Š.; Gál, N.; Knoška, J.; Sojková, M.; Pisarčík, M.

2016-03-01

A metallic ferromagnet (F) in proximity with a superconductor (S) can transport supercurrent on a long distance through conversion of opposite-spin singlet Cooper pairs (CP) into equal-spin triplet CP (long range triplet component, LRTC), which are not broken by the exchange energy of F. The optimal conditions for the conversion are yet to be clarified; however, it is accepted that the key point to this process include high interface transparency and magnetic inhomogeneity at the SF interface. The aim of our paper is to study SF nanostrips (length of about 1500 nm and width down to 300 nm) and lateral SFS nanojunctions based on high critical temperature YBa2Cu3Ox (YBCO) and half-metallic La0.67Sr0.33MnO3 (LSMO) thin films. We applied a focused Ga+ ion beam (FIB) for patterning the SF nanostrips, as well as lateral SFS nanojunctions, by creating a slot in the nanostrip after removing the YBCO film in the slot along a length of about 200 nm. The temperature dependences of the samples resistance R(T) show critical temperature TCn ≈ 89 K of the SF nanostrips; however, the SFS nanojunctions at T < TCn show a residual resistance R < 100 Ω corresponding to a dirty LSMO (ρ≈ 10 mΩ cm) in the slot. The LRTC was not observed in our lateral SFS nanojunctions until now.

High trapped fields in bulk YBCO superconductors

NASA Astrophysics Data System (ADS)

Fuchs, Günter; Gruss, Stefan; Krabbes, Gernot; Schätzle, Peter; Verges, Peter; Müller, Karl-Hartmut; Fink, Jörg; Schultz, Ludwig

The trapped field properties of bulk melt-textured YBCO material were investigated at different temperatures. In the temperature range of liquid nitrogen, maximum trapped fields of 1.1 T were found at 77 K by doping of YBCO with small amounts of zinc. The improved pinning of zinc-doped YBa2Cu3O7-x (YBCO) results in a pronounced peak effect in the field dependence of the critical current density. the trapped field at lower temperatures increases due to the increasing critical current density, however, at temperatures around 50 K cracking of the material is observed which is exposed to considerably tensile stresses due to Lorentz forces. Very high trapped fields up to 14.4 T were achieved at 22.5 K for a YBCO disk pair by the addition of silver improving the tensile strength of YBCO and by using a bandage made of a steel tube. The steel tube produces a compressive stress on YBCO after cooling down from 300 K to the measuring temperature, which is due to the higher coeeficient of thermal expansion of steel compared with that of YBCO in the a,b plane. The application of superconducting permanent magnets with trapped fields of 10 T and more in superconducting bearings would allow to obtain very high levitation pressures up to 2500 N/cm2 which is two orders of magnitude higher than the levitation pressure achievable in superconducting bearings with conventional permanent magnets. The most important problem for the application of superconducting permanent magnets is the magnetizing procedure of the YBCO material. Results of magnetizing YBCO disks by using of pulsed magnetic fields will be presented.

Experimental studies of diffusion welding of YBCO to copper using solder layers

NASA Astrophysics Data System (ADS)

Xie, Y.; Ouyang, Z.; Shi, L.; Kuang, Z.; Meng, M.

2017-02-01

The welding technology is of great importance in YBCO application. To make better joints, the diffusion welding of YBCO tape to copper has been carried out in a vacuum environment. In consideration of high welding temperature (above 200°C) could do damage to the material performance, a new kind of diffusion welding method with temperature below 200 °C has been developed recently. A new welding appliance which can offer pressure over 35Kg/mm2 and controlled temperature has been designed and built; several YBCO coated conductors joints soldered with different melting points of tins has been tested. The results showed that the diffusion can perfectly connect YBCO to copper as well as stainless steel and resistance of the joint was low, and the YBCO tape could bear 217°C for at least 15mins.

Ultrafast relaxation dynamics in BiFeO 3/YBa 2Cu 3O 7 bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Springer, D.; Nair, Saritha K.; He, Mi

The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO 3 (BFO) and superconducting YBa 2Cu 3O 7 (YBCO) grown on (001) SrTiO 3 substrate is studied by time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCOinterface as observed inmagnetization data. An extensionmore » of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.« less

Ultrafast relaxation dynamics in BiFeO 3/YBa 2Cu 3O 7 bilayers

DOE PAGES

Springer, D.; Nair, Saritha K.; He, Mi; ...

2016-02-12

The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO 3 (BFO) and superconducting YBa 2Cu 3O 7 (YBCO) grown on (001) SrTiO 3 substrate is studied by time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCOinterface as observed inmagnetization data. An extensionmore » of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.« less

High performance YBCO films. Quarterly status report No. 6, 1 February-30 April 1993. [YBCO (yttrium barium copper oxides)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denlinger, E.J.; Fathy, A.; Kalokitis, D.

1993-04-30

YBCO on MgF2 withstood post annealing to 750 deg C without deterioration. This allows the deposition of high quality multiple layer YBCO films onto both sides of a MgF2 substrate. GdBaCuO films were deposited onto LaAlO3 and appear to be superior to YBCO in terms of lower particulate density, slightly higher T[sub c]'s, and higher critical current density. The ramifications could be very beneficial to the MCM program. Furthermore, the tolerance of these films to a wider range of deposition conditions indicates a possibility of using these films on MgF2.

Fabrication of biaxially oriented YBCO on (001) biaxially oriented yttria-stabilized-zirconia on polycrystalline substrates

NASA Astrophysics Data System (ADS)

Arendt, P.; Foltyn, S.; Wu, Xin Di; Townsend, J.; Adams, C.; Hawley, M.; Tiwari, P.; Maley, M.; Willis, J.; Moseley, D.

Ion-assisted, ion-beam sputter deposition is used to obtain (001) biaxially oriented films of cubic yttria stabilized zirconia (YSZ) on polycrystalline metal substrates. Yttrium barium copper oxide (YBCO) is then heteroepitaxially pulse laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14 deg and 10 deg, respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/sq cm at 75 K and 0 T. At 75 K, the total dc transport current in a 1 cm wide YBCO film is 23 A.

Study of the inhomogeneity of critical current under in-situ tensile stress for YBCO tape

NASA Astrophysics Data System (ADS)

Zhu, Y. P.; Chen, W.; Zhang, H. Y.; Liu, L. Y.; Pan, X. F.; Yang, X. S.; Zhao, Y.

2018-07-01

A Hall sensor system was used to measure the local critical current of YBCO tape with high spatial resolution under in-situ tensile stress. The hot spot generation and minimum quench energy of YBCO tape, which depended on the local critical current, was calculated through the thermoelectric coupling model. With the increase in tensile stress, the cracks which have different dimensions and critical current degradation arose more frequently and lowered the thermal stability of the YBCO tape.

In-situ diagnostics for metalorganic chemical vapor deposition of yttrium barium copper oxide

NASA Astrophysics Data System (ADS)

Tripathi, Ashok Burton

A new stagnation flow MOCVD research reactor is described that is designed to serve as a testbed to develop tools for "intelligent" thin film deposition, such as in-situ sensors and diagnostics, control algorithms, and thin film growth models. The reactor is designed in particular for the deposition of epitaxial YBa2Cu3O 7-delta on MgO, although with minor modifications it would be suitable for deposition of any metal-oxide thin films. The reactor is specifically designed to permit closed-loop thermal and stoichiometric control of the film growth process. Closed-loop control of precursor flow rates is accomplished by using ultraviolet absorption spectroscopy on each precursor line. Also integrated into the design is a Fourier Transform Infrared (FTIR) spectroscopy system which collects real-time, in-situ infrared polarized reflectance spectra of the film as it grows. Numerical simulation was used extensively to optimize the fluid dynamics and heat transfer to provide uniform fluxes to the substrate. As a result, thickness uniformity across the substrate is typically within 3% from the center to the edge of the substrate. Experimental studies of thin films grown in the Y/Ba/Cu/O system have been carried out. The films have been characterized by Rutherford Backscattering Spectrometry and X-ray Diffraction. Results indicate c-axis oriented grains with pure 1:2:3 phase YBCO, good spatial uniformity, and a low degree of c-axis wobble. Experimental growth data is used in a gas phase and surface chemistry model to calculate sticking coefficients for yttrium oxide, barium oxide, and copper oxide on YBCO. In-situ FTIR and Coherent Gradient Sensing (CGS) analysis of growing films has been performed, yielding accurate substrate temperature, film thickness monitoring, and full-field, real-time curvature maps of the films. In addition, we have implemented CGS to obtain full-field in-situ images of local curvature during oxygenation and deoxygenation of YBCO films. An analysis of the oxygen diffusion is performed, and diffusivity constants are presented for a variety of temperature and film conditions.

Thermally actuated magnetization flux pump in single-grain YBCO bulk

NASA Astrophysics Data System (ADS)

Yan, Yu; Li, Quan; Coombs, T. A.

2009-10-01

Recent progress in material processing has proved that high temperature superconductors (HTS) have a great potential to trap large magnetic fields at cryogenic temperatures. For example, HTS are widely used in MRI scanners and in magnetic bearings. However, using traditional ways to magnetize, the YBCO will always need the applied field to be as high as the expected field on the superconductor or much higher than it, leading to a much higher cost than that of using permanent magnets. In this paper, we find a method of YBCO magnetization in liquid nitrogen that only requires the applied field to be at the level of a permanent magnet. Moreover, rather than applying a pulsed high current field on the YBCO, we use a thermally actuated material (gadolinium) as an intermedia and create a travelling magnetic field through it by changing the partial temperature so that the partial permeability is changed to build up the magnetization of the YBCO gradually after multiple pumps. The gadolinium bulk is located between the YBCO and the permanent magnet and is heated and cooled repeatedly from the outer surface to generate a travelling thermal wave inwards. In the subsequent experiment, an obvious accumulation of the flux density is detected on the surface of the YBCO bulk.

Proximity effects across oxide-interfaces of superconductor-insulator-ferromagnet hybrid heterostructure.

PubMed

Prajapat, C L; Singh, Surendra; Bhattacharya, D; Ravikumar, G; Basu, S; Mattauch, S; Zheng, Jian-Guo; Aoki, T; Paul, Amitesh

2018-02-27

A case study of electron tunneling or charge-transfer-driven orbital ordering in superconductor (SC)-ferromagnet (FM) interfaces has been conducted in heteroepitaxial YBa 2 Cu 3 O 7 (YBCO)/La 0.67 Sr 0.33 MnO 3 (LSMO) multilayers interleaved with and without an insulating SrTiO 3 (STO) layer between YBCO and LSMO. X-ray magnetic circular dichroism experiments revealed anti-parallel alignment of Mn magnetic moments and induced Cu magnetic moments in a YBCO/LSMO multilayer. As compared to an isolated LSMO layer, the YBCO/LSMO multilayer displayed a (50%) weaker Mn magnetic signal, which is related to the usual proximity effect. It was a surprise that a similar proximity effect was also observed in a YBCO/STO/LSMO multilayer, however, the Mn signal was reduced by 20%. This reduced magnetic moment of Mn was further verified by depth sensitive polarized neutron reflectivity. Electron energy loss spectroscopy experiment showed the evidence of Ti magnetic polarization at the interfaces of the YBCO/STO/LSMO multilayer. This crossover magnetization is due to a transfer of interface electrons that migrate from Ti (4+)-δ to Mn at the STO/LSMO interface and to Cu 2+ at the STO/YBCO interface, with hybridization via O 2p orbitals. So charge-transfer driven orbital ordering is the mechanism responsible for the observed proximity effect and Mn-Cu anti-parallel coupling in YBCO/STO/LSMO. This work provides an effective pathway in understanding the aspect of long range proximity effect and consequent orbital degeneracy parameter in magnetic coupling.

Analysis of YBCO high temperature superconductor doped with silver nanoparticles and carbon nanotubes using Williamson-Hall and size-strain plot

NASA Astrophysics Data System (ADS)

Dadras, Sedigheh; Davoudiniya, Masoumeh

2018-05-01

This paper sets out to investigate and compare the effects of Ag nanoparticles and carbon nanotubes (CNTs) doping on the mechanical properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. For this purpose, the pure and doped YBCO samples were synthesized by sol-gel method. The microstructural analysis of the samples is performed using X-ray diffraction (XRD). The crystalline size, lattice strain and stress of the pure and doped YBCO samples were estimated by modified forms of Williamson-Hall analysis (W-H), namely, uniform deformation model (UDM), uniform deformation stress model (UDSM) and the size-strain plot method (SSP). These results show that the crystalline size, lattice strain and stress of the YBCO samples declined by Ag nanoparticles and CNTs doping.

Greatly enhanced flux pinning properties of fluorine-free metal-organic decomposition YBCO films by co-addition of halogens (Cl, Br) and metals (Zr, Sn, Hf)

NASA Astrophysics Data System (ADS)

Motoki, Takanori; Ikeda, Shuhei; Nakamura, Shin-ichi; Honda, Genki; Nagaishi, Tatsuoki; Doi, Toshiya; Shimoyama, Jun-ichi

2018-04-01

Additive-free YBCO films, as well as those with halogen (X) added, metal (M) added and (X, M) co-added, have been prepared by the fluorine-free metal-organic decomposition method on SrTiO3(100) single crystalline substrates, where X = Cl, Br and M = Zr, Sn, Hf. It was revealed that the addition of both Cl and Br to the starting solution resulted in the generation of oxyhalide, Ba2Cu3O4 X 2, in the YBCO films, and that the oxyhalide was found to promote the bi-axial orientation of the YBCO crystals. By adding a decent amount of Cl or Br, highly textured YBCO films with high J c were reproducibly obtained, even when an impurity metal, M, was co-added, while the addition of M without X did not greatly improve J c owing to the poor bi-axial orientation of the YBCO crystals. Our results suggest that the addition of Br more effectively enhances J c than the addition of Cl. The pinning force density at 40 K in 4.8 T reached ˜55 GN m-3 with the co-addition of (Br, M). This value is much larger than that of the pure YBCO film, reaching ˜17 GN m-3.

Polycrystalline Superconducting Thin Films: Texture Control and Critical Current Density

NASA Astrophysics Data System (ADS)

Yang, Feng

1995-01-01

The growth processes of polycrystalline rm YBa_2CU_3O_{7-X} (YBCO) and yttria-stabilized-zirconia (YSZ) thin films have been developed. The effectiveness of YSZ buffer layers on suppression of the reaction between YBCO thin films and metallic substrates was carefully studied. Grown on the chemically inert surfaces of YSZ buffer layers, YBCO thin films possessed good quality of c-axis alignment with the c axis parallel to the substrate normal, but without any preferred in-plane orientations. This leads to the existence of a large percentage of the high-angle grain boundaries in the YBCO films. The critical current densities (rm J_{c}'s) found in these films were much lower than those in single crystal YBCO thin films, which was the consequence of the weak -link effect of the high-angle grain boundaries in these films. It became clear that the in-plane alignment is vital for achieving high rm J_{c }s in polycrystalline YBCO thin films. To induce the in-plane alignment, ion beam-assisted deposition (IBAD) technique was integrated into the conventional pulsed laser deposition process for the growth of the YSZ buffer layers. It was demonstrated that using IBAD the in-plane orientations of the YSZ grains could be controlled within a certain range of a common direction. This ion -bombardment induced in-plane texturing was explained using the anisotropic sputtering yield theory. Our observations and analyses have provided valuable information on the optimization of the IBAD process, and shed light on the texturing mechanism in YSZ. With the in-plane aligned YSZ buffer layers, YBCO thin films grown on metallic substrates showed improved rm J_{c}s. It was found that the in-plane alignment of YSZ and that of YBCO were closely related. A direct correlation was revealed between the rm J_{c} value and the degree of the in-plane alignment for the YBCO thin films. To explain this correlation, a numerical model was applied to multi-grain superconducting paths with different textures to determine the expected rm J_{c}s. The good agreement between the experimental data and numerical results confirmed that the rm J_{c} improvement directly resulted from the reduction of the number of high-angle grain boundaries in the in-plane aligned polycrystalline YBCO thin films, and provided a guideline on the further improvement of the rm J_ {c}s of polycrystalline YBCO thin films.

Low-noise and wideband hot-electron superconductive mixer for terahertz frequencies

NASA Astrophysics Data System (ADS)

Karasik, Boris S.; Skalare, Anders; McGrath, William R.; Bumble, Bruce; Leduc, Henry G.; Barner, J. B.; Kleinsasser, Alan W.; Burke, P. J.; Schoelkopf, Robert J.; Prober, Daniel E.

1998-11-01

Superconductive hot-electron bolometer (HEB) mixers have been built and tested in the frequency range from 1.1 THz to 2.5 THz. The mixer device is a 0.15 - 0.3 micrometer microbridge made from a 10 nm thick Nb film. This device employs diffusion as a cooling mechanism for hot electrons. The double sideband noise temperature was measured to be less than or equal to 3000 K at 2.5 THz and the mixer IF bandwidth is expected to be at least 10 GHz for a 0.1 micrometer long device. The local oscillator (LO) power dissipated in the HEB microbridge was 20 - 100 nW. Further improvement of the mixer characteristics can be potentially achieved by using Al microbridges. The advantages and parameters of such devices are evaluated. The HEB mixer is a primary candidate for ground based, airborne and spaceborne heterodyne instruments at THz frequencies. HEB receivers are planned for use on the NASA Stratospheric Observatory for Infrared Astronomy (SOFIA) and the ESA Far Infrared and Submillimeter Space Telescope (FIRST). The prospects of a submicron-size YBa2Cu3O7-(delta ) (YBCO) HEB are discussed. The expected LO power of 1 - 10 (mu) W and SSB noise temperature of approximately equals 2000 K may make this mixer attractive for various remote sensing applications.

Microwave-assisted synthesis and critical analysis for YBa2Cu3O6+δ nanoparticles

NASA Astrophysics Data System (ADS)

Chhaganlal Gandhi, Ashish; Lin, Jauyn Grace

2018-05-01

A new cost effective scheme of a microwave-assisted sol–gel route followed by a short annealing time is proposed to synthesize YBCO nanoparticles (NPs) of various sizes. The advanced techniques of synchrotron radiation x-ray diffraction (SRXRD) and electron spin resonance (ESR) are used to analyze the size effects on their magnetic/superconducting properties. The major interesting finding is that the size of YBCO NPs could confine the amount of oxygen content and consequently change the superconducting transition temperature (T C ) of YBCO NPs. The ESR result demonstrates a sensitive probe to characterize surface defects in the oxygen-deficient YBCO NPs.

Frequency dependence of magnetic ac loss in a Roebel cable made of YBCO on a Ni-W substrate

NASA Astrophysics Data System (ADS)

Lakshmi, L. S.; Staines, M. P.; Badcock, R. A.; Long, N. J.; Majoros, M.; Collings, E. W.; Sumption, M. D.

2010-08-01

We have investigated the frequency dependent contributions to the magnetic ac loss in a 10 strand Roebel cable with 2 mm wide non-insulated strands and a transposition length of 90 mm. This cable is made from 40 mm wide YBCO coated conductor tape manufactured by AMSC and stabilized by electroplating 25 µm thick copper on either side prior to the mechanical punching of the cable strands. The measurements were carried out in both perpendicular and parallel field orientation, at frequencies in the range of 30-200 Hz. While the loss in the perpendicular orientation is predominantly hysteretic in nature, we observe some frequency dependence of the loss when the cable approaches full flux penetration at high field amplitudes. The magnitude is consistent with eddy current losses in the copper stabilization layer. This supports the fact that the inter-strand coupling loss is not significant in this frequency range. In the parallel field orientation, the hysteresis loss in the Ni-W alloy substrate dominates, but we see an unusually strong frequency dependent contribution to the loss which we attribute to intra-strand current loops.

Fiber optic quench detection via optimized Rayleigh Scattering in high-field YBCO accelerator magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flanagan, Gene

Yttrium barium copper oxide (YBCO) coated conductors are known for their ability to operate in the superconducting state at relatively high temperatures, even above the boiling point of liquid nitrogen (77 K). When these same conductors are operated at lower temperatures, they are able to operate in much higher magnetic fields than traditional superconductors like NiTi or Nb 3Sn. Thus, YBCO superconducting magnets are one of the primary options for generating the high magnetic fields needed for future high energy physics devices. Due to slow quench propagation, quench detection remains one of the primary limitations to YBCO magnets. Fiber opticmore » sensing, based upon Rayleigh scattering, has the potential for spatial resolution approaching the wavelength of light, or very fast temporal resolution at low spatial resolution, and a continuum of combinations in between. This project has studied, theoretically and experimentally, YBCO magnets and Rayleigh scattering quench detection systems to demonstrate feasibility of the systems for YBCO quench protection systems. Under this grant an experimentally validated 3D quench propagation model was used to accurately define the acceptable range of spatial and temporal resolutions for effective quench detection in YBCO magnets and to evaluate present-day and potentially improved YBCO conductors. The data volume and speed requirements for quench detection via Rayleigh scattering required the development of a high performance fiber optic based quench detection/data acquisition system and its integration with an existing voltage tap/thermo-couple based system. In this project, optical fibers are tightly co-wound into YBCO magnet coils, with the fiber on top of the conductor as turn-to-turn insulation. Local changes in the temperature or strain of the conductor are sensed by the optical fiber, which is in close thermal and mechanical contact with the conductor. Intrinsic imperfections in the fiber reflect Rayleigh backscattered laser signals that are shifted by the changes in the fiber that are induced by a local change in the YBCO temperature or strain. One goal of this project was to show that modern technology can be used to interrogate the signals from a (very expensive) YBCO magnet to detect an impending quench in time to protect it from self-destruction. The results show that Rayleigh-backscattering interrogated optical fibers (RIOF) have significant advantages over traditional techniques, including very high spatial resolution and the ability to detect a hot-spot well before the peak local temperature becomes so high that the conductor can be damaged. RIOF quench detection is intrinsically faster than voltage taps, and this intrinsic advantage is greater as the coil size and/or current margin increases. We describe the development and testing program performed under the grant.« less

Excess current experiment on YBCO tape conductor with metal stabilized layer

NASA Astrophysics Data System (ADS)

Tasaki, Kenji; Yazawa, Takashi; Ono, Michitaka; Kuriyama, Toru

2006-06-01

Excess current experiments were performed using YBCO tape conductors with a metal stabilized layer on the superconducting layer. The purpose of this research is to obtain the stable criteria of energy dissipation when YBCO tape is forced to flow excess current higher than its critical current. This situation should be considered in power applications. In the experiments short-length samples were immersed in liquid nitrogen and several cycles of 50Hz sinusoidal current were supplied to the samples by an induction voltage regulator. The critical current of the samples was about 110 A. With pulse length as long as 60 ms, YBCO tapes were able to be energized up to twelve times as the critical current without electrical or mechanical deformation. Prior to the excess current experiments, temperature dependency of resistance of the sample was measured so that the temperature rise was estimated by the generated resistance. It is found that YBCO tapes with a copper stabilized layer can be transiently heated to over 400K without degradation.

A Thermally Actuated Flux Pump for Energizing YBCO Pucks

DTIC Science & Technology

2016-05-01

transmitted through the thermal magnetic material sweeping magnetic field lines into the superconducting puck. We used YBCO as the superconductor with...of the YBCO sweeping vortices into the superconductor . These vortices would gradually accumulate in the superconductor . Successes have been reported...superconducting flux pump,” PHYSICA C, vol. 468, pp. 153-159, 2008. [2] T. A. Coombs, Z. Hong, Y. Yan and C. D. Rawlings, “ Superconductors : The

Design study of an YBCO-coated beam screen for the super proton-proton collider bending magnets

NASA Astrophysics Data System (ADS)

Gan, Pingping; Zhu, Kun; Fu, Qi; Li, Haipeng; Lu, Yuanrong; Easton, Matt; Liu, Yudong; Tang, Jingyu; Xu, Qingjin

2018-04-01

In order to reduce the beam impedance and refrigeration power dramatically, we have designed a high temperature superconductor (HTS) coated beam screen to screen the cold chamber walls of the super proton-proton collider bending magnets from beam-induced heat loads. It employs an absorber, inspired by the future circular collider studies, to absorb the immense synchrotron radiation power of 12.8 W/m emitted from the 37.5 TeV proton beams. Such a structure has the advantage of decreasing the electron cloud effect and improving the beam vacuum. We have compared the critical magnetic field and current density and accessibility of two potential HTS materials for the beam screen, TlBa2Ca2Cu3O9-δ (Tl-1223) and Yttrium Barium Copper Oxide (YBCO) and finally chose YBCO for coating. The beam screen is tentatively designed to work at 55-70 K because of the limited development of the YBCO material. The thermal analysis with oxygen cooling fluid indicates that the YBCO conductor can maintain its superconductivity even if the synchrotron radiation hits the YBCO-coated surface and the mechanical analysis shows that the structure has the ability to resist the Lorenz force during magnet quenches.

Inverse polarity of the resistive switching effect and strong inhomogeneity in nanoscale YBCO-metal contacts

NASA Astrophysics Data System (ADS)

Truchly, M.; Plecenik, T.; Zhitlukhina, E.; Belogolovskii, M.; Dvoranova, M.; Kus, P.; Plecenik, A.

2016-11-01

We have studied a bipolar resistive switching phenomenon in c-axis oriented normal-state YBa2Cu3O7-c (YBCO) thin films at room temperature by scanning spreading resistance microscopy (SSRM) and scanning tunneling microscopy (STM) techniques. The most striking experimental finding has been the opposite (in contrast to the previous room and low-temperature data for planar metal counter-electrode-YBCO bilayers) voltage-bias polarity of the switching effect in all SSRM and a number of STM measurements. We have assumed that the hysteretic phenomena in current-voltage characteristics of YBCO-based contacts can be explained by migration of oxygen-vacancy defects and, as a result, by the formation or dissolution of more or less conductive regions near the metal-YBCO interface. To support our interpretation of the macroscopic resistive switching phenomenon, a minimalist model that describes radical modifications of the oxygen-vacancy effective charge in terms of a charge-wind effect was proposed. It was shown theoretically that due to the momentum exchange between current carriers (holes in the YBCO compound) and activated oxygen ions, the direction in which oxygen vacancies are moving is defined by the balance between the direct electrostatic force on them and that caused by the current-carrier flow.

Improved epitaxial texture of thick YBa2Cu3O7-δ/GdBa2Cu3O7-δ films with periodic stress releasing

NASA Astrophysics Data System (ADS)

Lin, Jianxin; Yang, Wentao; Gu, Zhaohui; Shu, Gangqiang; Li, Minjuan; Sang, Lina; Guo, Yanqun; Liu, Zhiyong; Cai, Chuanbing

2015-04-01

Thick high-Tc superconducting films consisting of a YBa2Cu3O7-δ/GdBa2Cu3O7-δ periodic architecture are developed on oxid-buffered Hastelloy tapes using a pulsed laser deposition process. It is revealed that multilayer intermittent structures for superconducting layers are effective to avoid the presence of a-axis grains and microcracks that occur with increasing thickness, which are frequently observed in monolayer films of REBa2Cu3O7-δ (RE = Y, Gd, or other rare earths), such grains and cracks being the significant challenge for obtaining high critical current in coated conductors. Presently, the thicknesses of multilayer films vary from 0.5 μm to 3 μm and, based on the SEM images and x-ray φ-scans, hardly show the influences on the microstructures and grain orientation of the c-axis. Also, the characteristic Raman spectrum patterns and their shifting with increasing the thickness of YBCO/GdBCO imply that the superior texture is obtained due to the evolution of stress dominated by the compressive stress rather than tensile stress.

Trapped Field Characteristics of Stacked YBCO Thin Plates for Compact NMR Magnets: Spatial Field Distribution and Temporal Stability

PubMed Central

Hahn, Seungyong; Kim, Seok Beom; Ahn, Min Cheol; Voccio, John; Bascuñán, Juan; Iwasa, Yukikazu

2010-01-01

This paper presents experimental and analytical results of trapped field characteristics of a stack of square YBCO thin film plates for compact NMR magnets. Each YBCO plate, 40 mm × 40 mm × 0.08 mm, has a 25-mm diameter hole at its center. A total of 500 stacked plates were used to build a 40-mm long magnet. Its trapped field, in a bath of liquid nitrogen, was measured for spatial field distribution and temporal stability. Comparison of measured and analytical results is presented: the effects on trapped field characteristics of the unsaturated nickel substrate and the non-uniform current distribution in the YBCO plate are discussed. PMID:20585463

Self-doping processes between planes and chains in the metal-to-superconductor transition of YBa2Cu3O6.9.

PubMed

Magnuson, M; Schmitt, T; Strocov, V N; Schlappa, J; Kalabukhov, A S; Duda, L-C

2014-11-12

The interplay between the quasi 1-dimensional CuO-chains and the 2-dimensional CuO2 planes of YBa(2)Cu(3)O(6+x) (YBCO) has been in focus for a long time. Although the CuO-chains are known to be important as charge reservoirs that enable superconductivity for a range of oxygen doping levels in YBCO, the understanding of the dynamics of its temperature-driven metal-superconductor transition (MST) remains a challenge. We present a combined study using x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) revealing how a reconstruction of the apical O(4)-derived interplanar orbitals during the MST of optimally doped YBCO leads to substantial hole-transfer from the chains into the planes, i.e. self-doping. Our ionic model calculations show that localized divalent charge-transfer configurations are expected to be abundant in the chains of YBCO. While these indeed appear in the RIXS spectra from YBCO in the normal, metallic, state, they are largely suppressed in the superconducting state and, instead, signatures of Cu trivalent charge-transfer configurations in the planes become enhanced. In the quest for understanding the fundamental mechanism for high-Tc-superconductivity (HTSC) in perovskite cuprate materials, the observation of such an interplanar self-doping process in YBCO opens a unique novel channel for studying the dynamics of HTSC.

Preparation of SmBCO layer for the surface optimization of GdYBCO film by MOCVD process based on a simple self-heating technology

NASA Astrophysics Data System (ADS)

Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

2018-07-01

The MOCVD process was adopted to grow the REBa2Cu3O7-δ ((REBCO), RE = rare earth elements) films on the LaMnO3 (LMO) templates. Meanwhile, the LMO-template tapes are heated by the joule effect after applying a heating current through the Hastelloy metal substrates. The surface of GdYBCO films prepared by MOCVD method is prone to form outgrowths. So the surface morphology of GdYBCO film is optimized by depositing the SmBCO layer, which is an important process method for the preparation of high-quality multilayer REBCO films. At last, the GdYBCO/SmBCO/GdYBCO multilayer films were successfully prepared on the LMO templates based on the simple self-heating method. It is demonstrated that the GdYBCO surface was well improved by the characterization analysis of scanning electron microscope. And the Δω of REBCO (005) and Δφ of REBCO (103), which were performed by an X-ray diffraction system, are respectively 1.3° and 3.3° What's more, the critical current density (Jc) has been more than 3 MA/cm2 (77 K, 0 T) and the critical current (Ic) basically shows a trend of good linear increase with the increase of the number of REBCO layers.

Fatigue tests of YBCO coated conductors

NASA Astrophysics Data System (ADS)

Bamba, S.; Tanaka, Y.; Ando, T.; Ueda, H.; Ishiyama, A.; Yamada, Y.; Shiohara, Y.

2008-02-01

In this paper, we report the fatigue characteristics of IBAD/PLD YBCO coated conductors. A YBCO coated conductor used in the superconducting coil of a SMES system is repeatedly subjected to mechanical tensile or compressive strain due to the Lorentz force during electrical charging or discharging. The superconducting characteristic of this conductor may deteriorate because of this cyclic strain. Therefore, it is necessary to investigate the effect of cyclic strain on the superconducting characteristics of YBCO coated conductors that have a laminated structure. We developed an experimental apparatus with a U-shaped sample holder in order to apply cyclic strain to the sample tape. This apparatus was used to perform the fatigue tests on YBCO coated conductors in liquid nitrogen in the absence of an external magnetic field. The strain cycles with the maximum strain epsilonmax (zero external strain → epsilonmax → zero external strain) were applied and repeated up to 5000 times, and the Ic measurements were performed at epsilonmax. Therefore, the application of cyclic strain with epsilonmax ranging from 0.3% to 0.5% did not result in any significant deterioration of the superconducting characteristics of the conductor.

Research on resistance characteristics of YBCO tape under short-time DC large current impact

NASA Astrophysics Data System (ADS)

Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

2017-06-01

Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

NASA Technical Reports Server (NTRS)

Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

1993-01-01

Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Regan, S.P.

This volume of the LLE Review, covering the period October--December 1998, includes two articles addressing issues applicable to direct-drive ICF on the National Ignition Facility (NIF): laser-plasma interactions and laser-irradiation uniformity. Additional highlights of the research presented in this issue are: (1) P.B. Radha and S. Skupsky present a novel charged-particle diagnostic that performs simultaneous {rho}R measurements of the fuel, shell, and ablator regions of a compressed ICF target, consisting of an inner DT fuel region, a plastic (CH) shell, and an ablator (CD), by measuring the knock-on deuteron spectrum. (2) F. Dahmani, S. Burns, J. Lambropoulos, S. Papernov, andmore » A. Schmid report results from stress-inhibited laser-driven crack propagation and stress-delayed damage-initiation experiments in fused silica at 351 nm. Research is underway presently to determine the ramifications of these findings for large-aperture systems, such as OMEGA. (3) V. Goncharov presents an analytic theory of the ablative Richtmyer-Meshkov instability, which shows that the main stabilizing mechanism of the ablation-front perturbations is the dynamic overpressure of the blowoff plasma with respect to the target material. The perturbation evolution during the shock transit time is studied to determine the initial conditions for the Rayleigh-Taylor phase of the instability and to analyze the level of laser imprint on ICF direct-drive targets. (4) J.M. Larkin, W.R. Donaldson, T.H. Foster, and R.S. Knox examine the triplet state of rose bengal, a dye used in photodynamic therapy, that is produced by 1,064-nm excitation of T{sub 1}. (5) R. Adam, M. Currie, R. Sobolewski, O. Harnack, and M. Darula report measurements of the picosecond photoresponse of a current-biased YBCO microbridge coupled to a bicrystal YBCO Josephson junction.« less

Structure and corrosion behavior of sputter deposited cerium oxide based coatings with various thickness on Al 2024-T3 alloy substrates

NASA Astrophysics Data System (ADS)

Liu, Yuanyuan; Huang, Jiamu; Claypool, James B.; Castano, Carlos E.; O'Keefe, Matthew J.

2015-11-01

Cerium oxide based coatings from ∼100 to ∼1400 nm in thickness were deposited onto Al 2024-T3 alloy substrates by magnetron sputtering of a 99.99% pure CeO2 target. The crystallite size of CeO2 coatings increased from 15 nm to 46 nm as the coating thickness increased from ∼100 nm to ∼1400 nm. The inhomogeneous lattice strain increased from 0.36% to 0.91% for the ∼100 nm to ∼900 nm thick coatings and slightly decreased to 0.89% for the ∼1400 nm thick coating. The highest adhesion strength to Al alloy substrates was for the ∼210 nm thick coating, due to a continuous film coverage and low internal stress. Electrochemical measurements indicated that sputter deposited crystalline CeO2 coatings acted as physical barriers that provide good cathodic inhibition for Al alloys in saline solution. The ∼900 nm thick CeO2 coated sample had the best corrosion performance that increased the corrosion resistance by two orders magnitude and lowered the cathodic current density 30 times compared to bare Al 2024-T3 substrates. The reduced defects and exposed surface, along with suppressed charge mobility, likely accounts for the improved corrosion performance as coating thickness increased from ∼100 nm to ∼900 nm. The corrosion performance decreased for ∼1400 nm thick coatings due in part to an increase in coating defects and porosity along with a decrease in adhesion strength.

Investigation for surface resistance of yttrium-barium-copper-oxide thin films on various substrates for microwave applications

NASA Astrophysics Data System (ADS)

Yao, Hongjun

High temperature superconducting (HTS) materials such as YBCO (Yttrium-Barium-Copper-Oxide) are very attractive in microwave applications because of their extremely low surface resistance. In the proposed all-HTS tunable filter, a layer of HTS thin film on a very thin substrate (100 mum) is needed to act as the toractor that can be rotated to tune the frequency. In order to provide more substrate candidates that meet both electrical and mechanical requirements for this special application, surface resistance of YBCO thin films on various substrates was measured using microstrip ring resonator method. For alumina polycrystalline substrate, a layer of YSZ (Yttrium stabilized Zirconia) was deposited using IBAD (ion beam assisted deposition) method prior to YBCO deposition. The surface resistance of the YBCO thin film on alumina was found to be 22 mO due to high-angle grain boundary problem caused by the mixed in-plane orientations and large FWHM (full width at half maximum) of the thin film. For YBCO thin films on a YSZ single crystal substrate, the surface resistance showed even higher value of 30 mO because of the mixed in-plane orientation problem. However, by annealing the substrate in 200 Torr oxygen at 730°C prior to deposition, the in-plane orientation of YBCO thin films can be greatly improved. Therefore, the surface resistance decreased to 1.4 mO, which is still more than an order higher than the reported best value. The YBCO thin films grown on LaAlO3 single crystal substrate showed perfect in-plane orientation with FWHM less 1°. The surface resistance was as low as 0.032 mO. A tunable spiral resonator made of YBCO thin film on LaAlO3 single crystal substrate demonstrated that the resonant frequency can be tuned in a rang as large as 500 MHz by changing the gap between toractor and substrate. The Q-factor was more than 12,000, which ensured the extraordinarily high sensitivity for the proposed all-HTS tunable filter.

The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

NASA Technical Reports Server (NTRS)

Mogro-Campero, A.; Turner, L. G.; Bogorad, A.; Herschitz, R.

1991-01-01

Thin films of YBa2Cu3O(7-x) (YBCO) were temperature cycled to simulate conditions of a low earth orbit satellite. In one series of tests, epitaxial and polycrystalline YBCO films were cycled between temperatures of +/- 80 C in vacuum and in nitrogen for hundreds of cycles. The room temperature resistance of an epitaxial YBCO film increased by about 10 percent, but the superconducting transition temperature was unchanged. The largest changes were for a polycrystalline YBCO film on oxidized silicon with a zirconia buffer layer, for which the transition temperature decreased by 3 K. An extended test was carried out for epitaxial films. After 3200 cycles (corresponding to about 230 days in space), transition temperatures and critical current densities remained unchanged.

Direct observation of twin deformation in YBa2Cu3O7-x thin films by in situ nanoindentation in TEM

NASA Astrophysics Data System (ADS)

Lee, Joon Hwan; Zhang, Xinghang; Wang, Haiyan

2011-04-01

The deformation behaviors of YBa2Cu3O7-x (YBCO) thin films with twinning structures were studied via in situ nanoindentation experiments in a transmission electron microscope. The YBCO films were grown on SrTiO3 (001) substrates by pulsed laser deposition. Both ex situ (conventional) and in situ nanoindentation were conducted to reveal the deformation of the YBCO films from the directions perpendicular and parallel to the twin interfaces. The hardness measured perpendicular to the twin interfaces is ˜50% and 40% higher than that measured parallel to the twin interfaces ex situ and in situ, respectively. Detailed in situ movie analysis reveals that the twin structures play an important role in deformation and strengthening mechanisms in YBCO thin films.

The successful incorporation of Ag into single grain, Y-Ba-Cu-O bulk superconductors

NASA Astrophysics Data System (ADS)

Congreve, Jasmin V. J.; Shi, Yunhua; Dennis, Anthony R.; Durrell, John H.; Cardwell, David A.

2018-07-01

The use of RE-Ba-Cu-O [(RE)BCO] bulk superconductors, where RE = Y, Gd, Sm, in practical applications is, at least in part, limited by their mechanical properties and brittle nature, in particular. Alloying these materials with silver, however, produces a significant improvement in strength without any detrimental impact on their superconducting properties. Unfortunately, the top seeded melt growth technique, used routinely to process bulk (RE)BCO superconductors in the form of large, single grains required for practical applications, is complex and has a large number of inter-related variables, so the addition of silver increases the complexity of the growth process even further. This can make successful growth of this system extremely challenging. Here we report measurements of the growth rate of YBCO-Ag fabricated using a new growth technique consisting of continuous cooling and isothermal hold process. The resulting data form the basis of a model that has been used to derive suitable heating profiles for the successful single grain growth of YBCO-Ag bulk superconductors of up to 26 mm in diameter. The microstructure and distribution of silver within these samples have been studied in detail. The maximum trapped field at the top surface of the bulk YBCO-Ag samples has been found to be comparable to that of standard YBCO processed without Ag. The YBCO-Ag samples also exhibit a much more uniform trapped field profile compared to that of YBCO.

High performance YBCO films. Report for 1 August-31 October 1992

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denlinger, E.J.; Fathy, A.; Kalokitis, D.

1992-10-31

The objective of this program is to identify suitable low loss, low dielectric constant substrates and develop and optimize deposition processes for high quality YBCO films including the necessary buffer layers. Ultimate goals are large area substrates having double-sided HTS coating with a surface resistance ten times lower than copper at 40 GHz. High quality HTS films on low dielectric constant substrates are expected to find widespread use in advanced millimeter wave components, in extending the power handling capability of microwave and millimeter wave circuitry, and in facilitating high speed computer interconnects. Sample demonstration circuits will be built toward themore » end of the program. We have successfully deposited a high quality YBCO film on a good low loss and low dielectric constant substrate, magnesium fluoride (e=5). With the use of two buffer layers (magnesium oxide and strontium titanate) between the YBCO and the substrate, transition temperatures of 89 deg K and transition widths of about 0.5 deg K were achieved. The critical current density Jc of 4 x 10 6 A/cm2 at 77K in zero field is among the highest reported for YBCO films. The magnesium fluoride (MgF2) substrate has a tetragonal structure with a dielectric constant of 5.2 in the plane of the substrate and 4.6 perpendicular to the substrate surface. It has a good harness (-575 Knoop) and a linear thermal expansion coefficient that closely matches YBCO and the buffer layers.« less

Effects of graphene oxide doping on the structural and superconducting properties of YBa2Cu3O7-δ

NASA Astrophysics Data System (ADS)

Dadras, S.; Falahati, S.; Dehghani, S.

2018-05-01

In this research we reported the effects of graphene oxide (GO) doping on the structural and superconducting properties of YBa2Cu3O7-δ (YBCO) high temperature superconductors. We synthesized YBCO powder by sol-gel method. After calcination, the powder mixed with different weight percent (0, 0.1, 0.3, 0.7, 1 wt.%) of GO. Refinement of X-ray diffraction (XRD) was carried out by material analysis using diffraction (MAUD) program to obtain the structural parameters such as lattice parameters, site occupancy of different atoms and orthorhombicity value for the all samples. Results show that GO doping does not change the structure of YBCO compound, Cu (1), Cu (2) and oxygen sites occupancy. It seems that GO remains between the grains and can play the role of weak links. We found that GO addition to YBCO compound increases transition temperature (TC). The oxygen contents of the all GO-doped samples are increased with respect to the pure one. The strain (ɛ) of the samples obtained from Williamson-Hall method, varies with increasing of GO doping. The scanning electron microscopy (SEM) images of the samples show better YBCO grain connections by GO doping.

Ultrasonic studies of high-temperature superconductors

NASA Astrophysics Data System (ADS)

Feller, Jeffrey Robert

1997-09-01

This dissertation consists roughly of two parts. The first part deals with YBa2Cu3O7-δ (YBCO) films deposited on piezoelectric (LiNbO3) substrates. Interdigital surface acoustic wave (SAW) devices (delay lines operating at center frequencies of 50 and 100 MHz) fabricated from YBCO films are examined; insertion loss measurements are presented, and electrode resistance effects are analyzed using equivalent circuit models. Sheet resistance and 168 MHz SAW attenuation measurements of a granular YBCO film on LiNbO3 are also presented. The experimental data are discussed in terms of a percolation theory that models the film as an array of identical YBCO grains connected by resistive junctions which, in the superconducting state behave as Josephson junctions. The normal state resistances of the junctions are assumed to be randomly distributed. In the second part of the dissertation, a number of novel techniques (SAW 'bridges,' the high frequency interdigital proximity probe, and weak acoustic coupling sampled continuous wave spectrometry), used in the study of the vortex state and structural transitions in the normal state of YBCO films and single crystals, are described. Evidence of the existence of a first order structural transition in the vicinity of 220 K is provided.

Glass transition in thin supported polystyrene films probed by temperature-modulated ellipsometry in vacuum.

PubMed

Efremov, Mikhail Yu; Kiyanova, Anna V; Last, Julie; Soofi, Shauheen S; Thode, Christopher; Nealey, Paul F

2012-08-01

Glass transition in thin (1-200 nm thick) spin-cast polystyrene films on silicon surfaces is probed by ellipsometry in a controlled vacuum environment. A temperature-modulated modification of the method is used alongside a traditional linear temperature scan. A clear glass transition is detected in films with thicknesses as low as 1-2 nm. The glass transition temperature (T(g)) shows no substantial dependence on thickness for coatings greater than 20 nm. Thinner films demonstrate moderate T(g) depression achieving 18 K for thicknesses 4-7 nm. Less than 4 nm thick samples are excluded from the T(g) comparison due to significant thickness nonuniformity (surface roughness). The transition in 10-20 nm thick films demonstrates excessive broadening. For some samples, the broadened transition is clearly resolved into two separate transitions. The thickness dependence of the glass transition can be well described by a simple 2-layer model. It is also shown that T(g) depression in 5 nm thick films is not sensitive to a wide range of experimental factors including molecular weight characteristics of the polymer, specifications of solvent used for spin casting, substrate composition, and pretreatment of the substrate surface.

High T(sub c) superconductor/ferroelectric heterostructures

NASA Astrophysics Data System (ADS)

Ryder, Daniel F., Jr.

1994-12-01

Thin films of the ferroelectric perovskite, Ba(x) Sr(1-x) TiO3 (BST), were deposited on superconducting (100)YBa2Cu3O(x)(YBCO)/ (100)Yttria-stabilized zirconia(YSZ) substrates and (100)Si by ion-beam sputtering. Microstructural and compositional features of the ceramic bilayer were assessed by a combination of x-ray diffraction (XRD) and scanning electron microscopy. The films were smooth and featureless, and energy dispersive x-ray spectroscopy (EDX) data indicated that film composition closely matched target composition. XRD analysis showed that films deposited on YBCO substrates were highly c-axis textured, while the films deposited on (100)Si did not exhibit any preferred growth morphology. The superconducting properties of the YBCO substrate layer were maintained throughout the processing stages and, as such, it was demonstrated that ion beam sputtering is a viable method for the deposition of Ferroelectric/YBCO heterostructures.

Amorphous SiC as a structural layer in microbridge-based RF MEMS switches for use in software-defined radio

NASA Astrophysics Data System (ADS)

Parro, Rocco J.; Scardelletti, Maximilian C.; Varaljay, Nicholas C.; Zimmerman, Sloan; Zorman, Christian A.

2008-10-01

This paper reports an effort to develop amorphous silicon carbide (a-SiC) films for use in shunt capacitor RF MEMS microbridge-based switches. The films were deposited using methane and silane as the precursor gases. Switches were fabricated using 500 nm and 300 nm-thick a-SiC films to form the microbridges. Switches made from metallized 500 nm-thick SiC films exhibited favorable mechanical performance but poor RF performance. In contrast, switches made from metallized 300 nm-thick SiC films exhibited excellent RF performance but poor mechanical performance. Load-deflection testing of unmetallized and metallized bulk micromachined SiC membranes indicates that the metal layers have a small effect on the Young's modulus of the 500 nm and 300 nm-thick SiC MEMS. As for residual stress, the metal layers have a modest effect on the 500 nm-thick structures, but a significant affect on the residual stress in the 300 nm-thick structures.

Influence of ZnO doping on the properties of single domain YBCO bulks fabricated by RE+011 TSIG process

NASA Astrophysics Data System (ADS)

Yang, W. M.; Yuan, X. C.; Guo, Y. X.

2017-10-01

Single domain YBCO bulk superconductors with different additions of ZnO have been successfully fabricated by RE+011 TSIG process with a new solid phase of [(100-x)(Y2O3 + 1.2BaCuO2)+xZnO] and a new liquid phase of (Y2O3+6CuO+10BaCuO2). The effects of ZnO additions on the growth morphology, microstructure, critical temperature (Tc), the levitation force and trapped field of the YBCO bulks have been investigated. It is found that within the range of ZnO additions x=0-1.0 wt.%, all the samples are of the typical characteristic of single-domain YBCO bulk; the Tc of the samples decreases from 92 K to 80 K when the ZnO addition x increases from x=0 wt.% to x=1.0 wt.%; the levitation force and trapped field of the samples firstly increase and then decrease with increase of ZnO additions after going through a maximum, which is closely related with the ZnO addition and the resulting flux pinning force caused by lattice distortion due to the substitution of Zn2+ for Cu2+ site in the YBCO crystal; the largest levitation force 36.8 N (77 K, 0.5 T) and trapped field 0.416 T (77 K, 0.5 T) of the samples are obtained when x=0.1 wt.%, respectively. This result is significantly important and helpful for us to improve the properties of YBCO bulk superconductors.

Effects of densification of precursor pellets on microstructures and critical current properties of YBCO melt-textured bulks

NASA Astrophysics Data System (ADS)

Setoyama, Yui; Shimoyama, Jun-ichi; Motoki, Takanori; Kishio, Kohji; Awaji, Satoshi; Kon, Koichi; Ichikawa, Naoki; Inamori, Satoshi; Naito, Kyogo

2016-12-01

Effects of densification of precursor disks on the density of residual voids and critical current properties for YBCO melt-textured bulk superconductors were systematically investigated. Six YBCO bulks were prepared from precursor pellets with different initial particle sizes of YBa2Cu3Oy (Y123) powder and applied pressures for pelletization. It was revealed that use of finer Y123 powder and consolidation using cold-isostatic-pressing (CIP) with higher pressures result in reduction of residual voids at inner regions of bulks and enhance Jc especially under low fields below the second peak.

Vortex pinning landscape in MOD-TFA YBCO nanostroctured films

NASA Astrophysics Data System (ADS)

Gutierrez, J.; Puig, T.; Pomar, A.; Obradors, X.

2008-03-01

A methodology of general validity to study vortex pinning in YBCO based on Jc transport measurements is described. It permits to identify, separate and quantify three basic vortex pinning contributions associated to anisotropic-strong, isotropic-strong and isotropic-weak pinning centers. Thereof, the corresponding vortex pinning phase diagrams are built up. This methodology is applied to the new solution-derived YBCO nanostructured films, including controlled interfacial pinning by the growth of nanostructured templates by means of self-assembled processes [1] and YBCO-BaZrO3 nanocomposites prepared by modified solution precursors. The application of the methodology and comparison with a standard solution-derived YBCO film [2], enables us to identify the nature and the effect of the additional pinning centers induced. The nanostructured templates films show c-axis pinning strongly increased, controlling most of the pinning phase diagram. On the other hand, the nanocomposites have achieved so far, the highest pinning properties in HTc-superconductors [3], being the isotropic-strong defects contribution the origin of their unique properties. [1] M. Gibert et al, Adv. Mat. vol 19, p. 3937 (2007) [2] Puig.T et al, SuST EUCAS 2007 (to be published) [3] J. Gutierrez et al, Nat. Mat. vol. 6, p. 367 (2007) * Work supported by HIPERCHEM, NANOARTIS and MAT2005-02047

Structural and optical properties of ZnO thin films prepared by RF sputtering at different thicknesses

NASA Astrophysics Data System (ADS)

Hammad, Ahmed H.; Abdel-wahab, M. Sh.; Vattamkandathil, Sajith; Ansari, Akhalakur Rahman

2018-07-01

Hexagonal nanocrystallites of ZnO in the form of thin films were prepared by radio frequency sputtering technique. X-ray diffraction analysis reveals two prominent diffraction planes (002) and (103) at diffraction angles around 34.3 and 62.8°, respectively. The crystallite size increases through (103) plane from 56.1 to 64.8 Å as film thickness changed from 31 nm up to 280 nm while crystallites growth through (002) increased from 124 to 136 Å as film thickness varies from 31 to 107 nm and dropped to 115.8 Å at thickness 280 nm. The particle shape changes from spherical to longitudinal form. The particle size is 25 nm for films of thickness below 107 nm and increases at higher thicknesses (134 and 280 nm) from 30 to 40 nm, respectively. Optical band gap is deduced to be direct with values varied from 3.22 to 3.28 eV and the refractive index are evaluated based on the optical band values according to Moss, Ravindra-Srivastava, and Dimitrov-Sakka models. All refractive index models gave values around 2.3.

Characteristics of blue organic light emitting diodes with different thick emitting layers

NASA Astrophysics Data System (ADS)

Li, Chong; Tsuboi, Taiju; Huang, Wei

2014-08-01

We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

The effect of the YBCO-PST composite composition on the superconducting carrier concentration determined by microwave studies under high pressure

NASA Astrophysics Data System (ADS)

Krupski, M.; Stankowski, J.; Przybył, S.; Andrzejewski, B.; Kaczmarek, A.; Hilczer, B.; Marfaing, J.; Caranoni, C.

1999-07-01

The effect of hydrostatic pressure ( p<0.6 GPa) on the superconducting critical temperature Tc in YBa 2Cu 3O 7- δ-Pb(Sc 0.5Ta 0.5)O 3 (YBCO-PST) composite is measured by the method of magnetically modulated microwave absorption (MMMA). The Tc dependence on the PST fraction in weight x (0, 0.25, 0.5 and 0.75) is approximated by an inverted parabola function whereas the influence of pressure on Tc is represented by the equation: d Tc/d p=0.61(2)-1.72(6) x. The result may be explained assuming that PST phase in YBCO-PST composite influences the superconducting carrier concentration similar to the chemical substitution in YBa 2Cu 3O 7 [J.J. Neumeier, H.A. Zimmermann, Phys. Rev. B 47 (1993) 8385]. It is suggested that ions from PST diffuse to YBCO cell during the sintering of the composite.

The Improvement of Utilization Ratio of Metal Organic Sources for the Low Cost Preparation of MOCVD-synthesized YBCO Films based on a Self-heating Technology

NASA Astrophysics Data System (ADS)

Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Tao, Bowan; Li, Yanrong

2017-12-01

We have successfully applied metal organic chemical vapor deposition (MOCVD) to synthesize biaxially textured YBa2Cu3O7-δ (YBCO) superconducting films on the templates of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization (SDP) Y2O3/Hastelloy tape. The YBCO films have obtained dense and smooth surface with good structure and performance. A new self-heating method, which replaced the conventional heating-wire radiation heating method, has been used to heat the Hastelloy metal tapes by us. Compared with the heating-wire radiation heating method, the self-heating method shows higher energy efficiency and lower power consumption, which has good advantage to simplify the structure of the MOCVD system. Meanwhile, the utilization ratio of metal organic sources can be increased from 6% to 20% through adopting the new self-heating method. Then the preparation cost of the YBCO films can be also greatly reduced.

Levitation forces of a bulk YBCO superconductor in gradient varying magnetic fields

NASA Astrophysics Data System (ADS)

Jiang, J.; Gong, Y. M.; Wang, G.; Zhou, D. J.; Zhao, L. F.; Zhang, Y.; Zhao, Y.

2015-09-01

The levitation forces of a bulk YBCO superconductor in gradient varying high and low magnetic fields generated from a superconducting magnet were investigated. The magnetic field intensity of the superconducting magnet was measured when the exciting current was 90 A. The magnetic field gradient and magnetic force field were both calculated. The YBCO bulk was cooled by liquid nitrogen in field-cooling (FC) and zero-field-cooling (ZFC) condition. The results showed that the levitation forces increased with increasing the magnetic field intensity. Moreover, the levitation forces were more dependent on magnetic field gradient and magnetic force field than magnetic field intensity.

Development of YBCO Superconductor for Electric Systems: Cooperative Research and Development Final Report, CRADA Number CRD-04-150

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, R.

2013-03-01

The proposed project will be collaborative in exploration of high temperature superconductor oxide films between SuperPower, Inc. and the National Renewable Energy Laboratory. This CRADA will attempt to develop YBCO based high temperature oxide technology.

Topography evolution of rough-surface metallic substrates by solution deposition planarization method

NASA Astrophysics Data System (ADS)

Chu, Jingyuan; Zhao, Yue; Liu, Linfei; Wu, Wei; Zhang, Zhiwei; Hong, Zhiyong; Li, Yijie; Jin, Zhijian

2018-01-01

As an emerging technique for surface smoothing, solution deposition planarization (SDP) has recently drawn more attention on the fabrication of the second generation high temperature superconducting (2G-HTS) tapes. In our work, a number of amorphous oxide layers were deposited on electro-polished or mirror-rolled metallic substrates by chemical solution route. Topography evolution of surface defects on these two types of metallic substrates was thoroughly investigated by atomic force microscopy (AFM). It was showed that root mean square roughness values (at 50 × 50 μm2 scanning scale) on both rough substrates reduced to ∼5 nm after coating with SDP-layer. The smoothing effect was mainly attributed to decrease of the depth at grain boundary grooving on the electro-polished metallic substrate. On the mirror-rolled metallic substrates, the amplitude and frequency of the height fluctuation perpendicular to the rolling direction were gradually reduced as depositing more numbers of SDP-layer. A high Jc value of 4.17 MA cm-2 (at 77 K, s.f.) was achieved on a full stack of YBCO/CeO2/IBAD-MgO/SDP-layer/C276 sample. This study enhanced understanding of the topography evolution on the surface defects covered by the SDP-layer, and demonstrated a low-cost route for fabricating IBAD-MgO based YBCO templates with a simplified architecture.

Strongly suppressed proximity effect and ferromagnetism in topological insulator/ferromagnet/superconductor thin film trilayers of Bi2Se3/SrRuO3/underdoped YBa2Cu3O x : a possible new platform for Majorana nano-electronics

NASA Astrophysics Data System (ADS)

Koren, Gad

2018-07-01

We report properties of a topological insulator–ferromagnet–superconductor trilayers comprised of thin films of 20 nm thick {Bi}}2{Se}}3 on 10 nm SrRuO3 on 30 nm {YBa}}2{Cu}}3{{{O}}}x. As deposited trilayers are underdoped and have a superconductive transition with {{T}}{{c}} onset at 75 K, zero resistance at 65 K, {{T}}Cueri} at 150 K and {{T}}* of about 200 K. Further reannealing under vacuum yields the 60 K phase of {YBa}}2{Cu}}3{{{O}}}x which still has zero resistance below about 40 K. Only when 10 × 100 microbridges were patterned in the trilayer, some of the bridges showed resistive behavior all the way down to low temperatures. Magnetoresistance versus temperature of the superconductive ones showed the typical peak due to flux flow against pinning below {{T}}{{c}}, while the resistive ones showed only the broad leading edge of such a peak. All this indicates clearly weak-link superconductivity in the resistive bridges between superconductive {YBa}}2{Cu}}3{{{O}}}x grains via the topological and ferromagnetic cap layers. Comparing our results to those of a reference trilayer (RTL) with the topological {Bi}}2{Se}}3 layer substituted by a non-superconducting highly overdoped {La}}1.65{Sr}}0.35{CuO}}4, indicates that the superconductive proximity effect as well as ferromagnetism in the topological trilayer are actually strongly suppressed compared to the non-topological RTL. This strong suppression could originate in lattice and Fermi levels mismatch as well as in short coherence length and unfavorable effects of strong spin–orbit coupling in {Bi}}2{Se}}3 on the d-wave pairing of {YBa}}2{Cu}}3{{{O}}}x. Proximity induced edge currents in the SRO/YBCO layer could lead to Majorana bound states, a possible signature of which is observed in the present study as zero bias conductance peaks.

Enhanced pinning in YBCO films with BaZrO.sub.3 nanoparticles

DOEpatents

Driscoll, Judith L.; Foltyn, Stephen R.

2010-06-15

A process and composition of matter are provided and involve flux pinning in thin films of high temperature superconductive oxides such as YBCO by inclusion of particles including barium and a group 4 or group 5 metal, such as zirconium, in the thin film.

Processing of Superconductor-Normal-Superconductor Josephson Edge Junctions

NASA Technical Reports Server (NTRS)

Kleinsasser, A. W.; Barner, J. B.

1997-01-01

The electrical behavior of epitaxial superconductor-normal-superconductor (SNS) Josephson edge junctions is strongly affected by processing conditions. Ex-situ processes, utilizing photoresist and polyimide/photoresist mask layers, are employed for ion milling edges for junctions with Yttrium-Barium-Copper-Oxide (YBCO) electrodes and primarily Co-doped YBCO interlayers.

Tailoring Curie temperature and magnetic anisotropy in ultrathin Pt/Co/Pt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S., E-mail: anil@physics.iisc.ernet.in

The dependence of perpendicular magnetization and Curie temperature (T{sub c}) of Pt/Co/Pt thin films on the thicknesses of Pt seed (Pt{sub s}) and presence of Ta buffer layer has been investigated in this work. Pt and Co thicknesses were varied between 2 to 8 nm and 0.35 to 1.31 nm (across the spin reorientation transition thickness) respectively and the T{sub c} was measured using SQUID magnetometer. We have observed a systematic dependence of T{sub c} on the thickness of Pt{sub s}. For 8 nm thickness of Pt{sub s} the Co layer of 0.35 nm showed ferromagnetism with perpendicular anisotropy atmore » room temperature. As the thickness of the Pt{sub s} was decreased to 2 nm, the T{sub c} went down below 250 K. XRD data indicated polycrystalline growth of Pt{sub s} on SiO{sub 2}. On the contrary Ta buffer layer promoted the growth of Pt(111). As a consequence Ta(5 nm)/Pt(3 nm)/Co(0.35 nm)/Pt(2 nm) had much higher T{sub c} (above 300 K) with perpendicular anisotropy when compared to the same stack without the Ta layer. Thus we could tune the ferromagnetic T{sub c} and anisotropy by varying the Pt{sub s} thickness and also by introducing Ta buffer layer. We attribute these observations to the micro-structural evolution of Pt{sub s} layer which hosts the Co layer.« less

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-02-23

This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure.more » Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.« less

Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

NASA Astrophysics Data System (ADS)

Ji, Hyunjin; Lee, Gwanmu; Joo, Min-Kyu; Yun, Yoojoo; Yi, Hojoon; Park, Ji-Hoon; Suh, Dongseok; Lim, Seong Chu

2017-05-01

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (μC) are maximal at a thickness of ˜10 nm. For LF noise, the interplay of interface trap density (NST), which was minimal at ˜10 nm, and the interfacial Coulomb scattering parameter (αSC), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (μC) peaked near 10 nm by the carrier fluctuation and charge distribution.

Magnetic anisotropy and magnetization reversal in Co/Cu multilayers nanowires

NASA Astrophysics Data System (ADS)

Ahmad, Naeem; Chen, J. Y.; Shi, D. W.; Iqbal, Javed; Han, Xiufeng

2012-04-01

The Co/Cu multilayer nanowires fabricated in an array using anodized aluminum oxide (AAO) template by electrodeposition method, have been investigated. It has been observed that the magnetization reversal mode and magnetic anisotropy depend upon the Co and Cu layer thicknesses. Magnetization reversal occurs by curling mode at around Co = 400 nm and Cu = 10 nm, while for Co = 30 nm and Cu = 60 nm, magnetization reversal occurs by nucleation mode. A change of magnetic anisotropy from out of plane to in plane is observed when thickness of Cu layer tCu = 60 nm and that of Co tCo = 30 nm. Magnetic anisotropy is lost when thickness of the Co layer tCo = 400 nm and that of Cu tCu= 10 nm. Magnetic properties have been explained by the competition among shape anisotropy, magnetostatic interactions and magnetocrystalline anisotropy. Magnetic properties can be tuned accordingly depending upon the thickness of the Co and Cu nanodisks.

Changes in Macular Retinal Layers and Peripapillary Nerve Fiber Layer Thickness after 577-nm Pattern Scanning Laser in Patients with Diabetic Retinopathy

PubMed Central

Shin, Ji Soo

2017-01-01

Purpose The aim of this study was to evaluate the changes in thickness of each macular retinal layer, the peripapillary retinal nerve fiber layer (RNFL), and central macular thickness (CMT) after 577-nm pattern scanning laser (PASCAL) photocoagulation in patients with diabetic retinopathy. Methods This retrospective study included 33 eyes with diabetic retinopathy that underwent 577-nm PASCAL photocoagulation. Each retinal layer thickness, peripapillary RNFL thickness, and CMT were measured by spectral-domain optical coherence tomography before 577-nm PASCAL photocoagulation, as well as at 1, 6, and 12 months after 577-nm PASCAL photocoagulation. Computerized intraretinal segmentation of optical coherence tomography was performed to identify the thickness of each retinal layer. Results The average thickness of the RNFL, ganglion cell layer, inner plexiform layer, inner nuclear layer, inner retinal layer, and CMT at each follow-up increased significantly from baseline (p < 0.001), whereas that of the retinal pigment epithelium at each follow-up decreased significantly from baseline (p < 0.001). The average thickness of the peripapillary RNFL increased significantly at one month (p < 0.001). This thickness subsequently recovered to 7.48 µm, and there were no significant changes at six or 12 months compared to baseline (p > 0.05). Conclusions Each macular retinal layer and CMT had a tendency to increase for one year after 577-nm PASCAL photocoagulation, whereas the average thickness of retinal pigment epithelium decreased at one-year follow-up compared to the baseline. Although an increase in peripapillary RNFL thickness was observed one month after 577-nm PASCAL photocoagulation, there were no significant changes at the one-year follow-up compared to the baseline. PMID:29022292

Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

PubMed

Sharma, N; Periasamy, C; Chaturvedi, N

2018-07-01

In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

Changes in Macular Retinal Layers and Peripapillary Nerve Fiber Layer Thickness after 577-nm Pattern Scanning Laser in Patients with Diabetic Retinopathy.

PubMed

Shin, Ji Soo; Lee, Young Hoon

2017-12-01

The aim of this study was to evaluate the changes in thickness of each macular retinal layer, the peripapillary retinal nerve fiber layer (RNFL), and central macular thickness (CMT) after 577-nm pattern scanning laser (PASCAL) photocoagulation in patients with diabetic retinopathy. This retrospective study included 33 eyes with diabetic retinopathy that underwent 577-nm PASCAL photocoagulation. Each retinal layer thickness, peripapillary RNFL thickness, and CMT were measured by spectral-domain optical coherence tomography before 577-nm PASCAL photocoagulation, as well as at 1, 6, and 12 months after 577-nm PASCAL photocoagulation. Computerized intraretinal segmentation of optical coherence tomography was performed to identify the thickness of each retinal layer. The average thickness of the RNFL, ganglion cell layer, inner plexiform layer, inner nuclear layer, inner retinal layer, and CMT at each follow-up increased significantly from baseline (p < 0.001), whereas that of the retinal pigment epithelium at each follow-up decreased significantly from baseline (p < 0.001). The average thickness of the peripapillary RNFL increased significantly at one month (p < 0.001). This thickness subsequently recovered to 7.48 μm, and there were no significant changes at six or 12 months compared to baseline (p > 0.05). Each macular retinal layer and CMT had a tendency to increase for one year after 577-nm PASCAL photocoagulation, whereas the average thickness of retinal pigment epithelium decreased at one-year follow-up compared to the baseline. Although an increase in peripapillary RNFL thickness was observed one month after 577-nm PASCAL photocoagulation, there were no significant changes at the one-year follow-up compared to the baseline. © 2017 The Korean Ophthalmological Society

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2018-05-01

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

RAPID COMMUNICATION: Large-area uniform ultrahigh-Jc YBa2Cu3O7-x film fabricated by the metalorganic deposition method using trifluoroacetates

NASA Astrophysics Data System (ADS)

Araki, Takeshi; Yamagiwa, Katsuya; Hirabayashi, Izumi; Suzuki, Katsumi; Tanaka, Shoji

2001-07-01

Ultrahigh-Jc YBa2Cu3O7-x (YBCO) films have been successfully fabricated by the metalorganic deposition method using a trifluoroacetate coating solution which is prepared by a newly developed purification technique, the solvent-into-gel (SIG) method. The prepared pure coating solution has less than 0.25% impurities and has a wide flexibility in process conditions to obtain high-Jc YBCO film. Using this feature, we have successfully formed 50 mm diameter YBCO films, which have a critical current density over 10 MA cm-2 (77 K, 0 T) on LaAlO3 single crystalline substrates.

A 5.9 tesla conduction-cooled coil composed of a stack of four single pancakes wound with YBCO wide tapes

NASA Astrophysics Data System (ADS)

Iwai, Sadanori; Miyazaki, Hiroshi; Tosaka, Taizo; Tasaki, Kenji; Urata, Masami; Ioka, Shigeru; Ishii, Yusuke

2013-11-01

We have been developing a conduction-cooled coil wound with YBCO-coated conductors for HTS applications. Previously, we have fabricated a coil composed of a stack of 12 single pancakes wound with 4 mm-wide YBCO tapes. This coil had a central magnetic field as high as 5.1 T at 10 K under conduction-cooled conditions. In the present study, we fabricated and tested a coil composed of a stack of four single pancakes wound with 12 mm-wide YBCO tapes. The total size of the coil and the Jc value of the tapes were almost the same as those of the former coil. At 77 K, the voltage-current characteristics showed a high n-value of 24, confirming that the coil had no degradation. Furthermore, in a conduction-cooled configuration at 20 K to 60 K, the coil showed a high n-value of over 20. At 20 K, the central magnetic field reached 5.9 T at 903 A, which is 1.3-times higher than that of the former coil.

Probing localized strain in solution-derived YB a2C u3O7 -δ nanocomposite thin films

NASA Astrophysics Data System (ADS)

Guzman, Roger; Gazquez, Jaume; Mundet, Bernat; Coll, Mariona; Obradors, Xavier; Puig, Teresa

2017-07-01

Enhanced pinning due to nanoscale strain is unique to the high-Tc cuprates, where pairing may be modified with lattice distortion. Therefore a comprehensive understanding of the defect landscape is required for a broad range of applications. However, determining the type and distribution of defects and their associated strain constitutes a critical task, and for this aim, real-space techniques for atomic resolution characterization are necessary. Here, we use scanning transmission electron microscopy (STEM) to study the atomic structure of individual defects of solution-derived YB a2C u3O7 (YBCO) nanocomposites, where the inclusion of incoherent secondary phase nanoparticles within the YBCO matrix dramatically increases the density of Y1B a2C u4O8 (Y124) intergrowths, the commonest defect in YBCO thin films. The formation of the Y124 is found to trigger a concatenation of strain-derived interactions with other defects and the concomitant nucleation of intrinsic defects, which weave a web of randomly distributed nanostrained regions that profoundly transform the vortex-pinning landscape of the YBCO nanocomposite thin films.

Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure.

PubMed

Prajapat, C L; Singh, Surendra; Paul, Amitesh; Bhattacharya, D; Singh, M R; Mattauch, S; Ravikumar, G; Basu, S

2016-05-21

Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

Crossover between superconductivity and magnetism in SrRuO3 mesocrystal embedded YBa2Cu3O7-x heterostructures.

PubMed

Suresh, Vandrangi; Lin, Jheng-Cyuan; Liu, Heng-Jui; Zhang, Zaoli; Chiang, Ping-Chih; Hsun, Yu-Ching; Chen, Yi-Chun; Lin, Jiunn-Yuan; Chu, Ying-Hao

2016-11-03

The competition between superconductivity and ferromagnetism poses great challenges and has attracted renewed interest for applications in novel spintronic devices. In order to emphasize their interactions, we fabricated a heterostructure composed of superconducting YBa 2 Cu 3 O 7-δ (YBCO) film embedded with itinerant ferromagnetic SrRuO 3 (SRO) mesocrystals. Starting from a doping concentration of 10 vol% of SRO mesocrystal in a YBCO matrix, corresponding to the density of SRO nanocrystals ∼5 × 10 9 cm -2 , which exhibits the typical characteristic of a metal-superconductor transition, and then increasing the magnetic interactions as a function of SRO embedment, the electronic correlation and the interplay between superconductivity and magnetism throughout the temperature regime were investigated. A metal-insulator transition in the normal state of YBCO and a crossover between superconductivity and magnetism at low temperatures were found upon increasing the density of nano-size SRO crystallites in the YBCO matrix as a consequence of competing interactions between these two ordered phases.

Temperature dependence of superfluid density in YBa 2Cu 3O 7- δ and Y 0.7Ca 0.3Ba 2Cu 3O 7- δ thin films: A doping dependence study of the linear slope

NASA Astrophysics Data System (ADS)

Lai, L. S.; Juang, J. Y.; Wu, K. H.; Uen, T. M.; Gou, Y. S.

2005-11-01

By using a microstrip ring resonator to measure the temperature dependence of the in-plane magnetic penetration depth λ(T) in YBa2Cu3O7-δ (YBCO) and Y0.7Ca0.3Ba2Cu3O7-δ (Ca-YBCO) epitaxially grown thin films, the linear temperature dependence of the superfluid density ρs/m∗ ≡ 1/λ2(T) was observed from the under- to the overdoped regime at the temperatures below T/Tc ≈ 0.3 . For the underdoped regime of YBCO and Ca-YBCO thin films, the magnitude of the slope d(1/λ2(T))/dT is insensitive to doping, and it can be treated in the framework of projected d-density-wave model. Combining these slope values with the thermal conductivity measurements, the Fermi-liquid correction factor α2 from the Fermi-liquid model, suggested by Wen and Lee, was revealed here with various doping levels.

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

NASA Astrophysics Data System (ADS)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Magnetic vortices in nanocaps induced by curvature

NASA Astrophysics Data System (ADS)

Abdelgawad, Ahmed M.; Nambiar, Nikhil; Bapna, Mukund; Chen, Hao; Majetich, Sara A.

2018-05-01

Magnetic nanoparticles with room temperature remanent magnetic vortices stabilized by their curvature are very intriguing due to their potential use in biomedicine. In the present study, we investigate room temperature magnetic chirality in 100 nm diameter permalloy spherical caps with 10 nm and 30 nm thicknesses. Micromagnetic OOMMF simulations predict the equilibrium spin structure for these caps to form a vortex state. We fabricate the permalloy caps by sputtering permalloy on both close-packed and sparse arrays of polystyrene nanoparticles. Magnetic force microscopy scans show a clear signature of a vortex state in close-packed caps of both 10 nm and 30 nm thicknesses. Alternating gradient magnetometry measurements of the caps are consistent with a remnant vortex state in 30 nm thick caps and a transition to an onion state followed by a vortex state in 10 nm thick caps. Out-of-plane measurements supported by micromagnetic simulations shows that an out-of-plane field can stabilize a vortex state down to a diameter of 15 nm.

Fabrication of Large Domain YBa2Cu3O(x) for Magnetic Suspension Applications

NASA Technical Reports Server (NTRS)

Sengupta, S.; Corpus, J.; Gaines, J. R., Jr.; Todt, V. R.; Zhang, X.; Miller, D. J.

1996-01-01

Large domain YBa2Cu3O(x) levitators have been fabricated using a seeded melt processing technique. Depending upon the seed, either a single or five domained sample can be obtained. The grain boundaries separating each domains in the five domain levitator are found to be 90 degrees. Similar levitation forces can be observed for single and five domained samples. After thermal cycling, however, a small decrease in the levitation force of the five domain levitator was observed as a function of thermal cycles while nearly no change in force was observed in the single domain levitator. Finally, it is shown that both, single and five domain YBCO, behave similarly as a function of sample thickness.

High Tc YBCO superconductor deposited on biaxially textured Ni substrate

DOEpatents

Budai, John D.; Christen, David K.; Goyal, Amit; He, Qing; Kroeger, Donald M.; Lee, Dominic F.; List, III, Frederick A.; Norton, David P.; Paranthaman, Mariappan; Sales, Brian C.; Specht, Eliot D.

1999-01-01

A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Garcia-Barriocanal, J.; Perez-Muñoz, A. M.; Sefrioui, Z.; Arias, D.; Varela, M.; Leon, C.; Pennycook, S. J.; Santamaria, J.

2013-06-01

We examine the effect of interface disorder in suppressing superconductivity in coherently grown ultrathin YBa2Cu3O7 (YBCO) layers on SrTiO3 (STO) in YBCO/STO superlattices. The termination plane of the STO is TiO2 and the CuO chains are missing at the interface. Disorder (steps) at the STO interface cause alterations of the stacking sequence of the intracell YBCO atomic layers. Stacking faults give rise to antiphase boundaries which break the continuity of the CuO2 planes and depress superconductivity. We show that superconductivity is directly controlled by interface disorder outlining the importance of pair breaking and localization by disorder in ultrathin layers.

A study of growth and thermal dewetting behavior of ultra-thin gold films using transmission electron microscopy

NASA Astrophysics Data System (ADS)

Sudheer, Mondal, Puspen; Rai, V. N.; Srivastava, A. K.

2017-07-01

The growth and solid-state dewetting behavior of Au thin films (0.7 to 8.4 nm) deposited on the formvar film (substrate) by sputtering technique have been studied using transmission electron microscopy. The size and number density of the Au nanoparticles (NPs) change with an increase in the film thickness (0.7 to 2.8 nm). Nearly spherical Au NPs are obtained for <3 nm thickness films whereas percolated nanostructures are observed for ≥3 nm thickness films as a consequence of the interfacial interaction of Au and formvar film. The covered area fraction (CAF) increases from ˜13 to 75 % with the change in film thickness from 0.7 to 8.4 nm. In-situ annealing of ≤3 nm film produces comparatively bigger size and better sphericity Au NPs along with their narrow distributions, whereas just percolated film produces broad distribution in size having spherical as well as elongated Au NPs. The films with thickness ≤3 nm show excellent thermal stability. The films having thickness >6 nm show capability to be used as an irreversible temperature sensor with a sensitivity of ˜0.1 CAF/°C. It is observed that annealing affects the crystallinity of the Au grains in the films. The electron diffraction measurement also shows annealing induced morphological evolution in the percolated Au thin films (≥3 nm) during solid-state dewetting and recrystallization of the grains.

Thickness-dependent metal-to-insulator transition in epitaxial VO2 films

NASA Astrophysics Data System (ADS)

Zhi, Bowen; Gao, Guanyin; Tan, Xuelian; Chen, Pingfan; Wang, Lingfei; Jin, Shaowei; Wu, Wenbin

2014-12-01

The metal-to-insulator transition (MIT) of VO2 films with a thickness of 3-100 nm on TiO2(001) substrates has been investigated. When varying the film thickness from 10 to 100 nm, the MIT temperature was first kept at 290 K in the range of 10-14 nm, and then increased with thickness increasing due to the strain relaxation. The origin of the suppressed transition in VO2 films thinner than 6 nm was also investigated. When prolonging the in situ annealing time, the sharpness, amplitude and width of the transition for 4 nm thick films were all increased, suggesting improved crystallinity rather than Ti diffusion from the substrates. In addition, the MIT was suppressed when the VO2 films were covered by a TiO2 layer, indicating that the interface effect via the confinement of the dimerization of the V atoms should be the main reason.

Electroluminescence dependence on the organic thickness in ZnO nano rods/Alq3 heterostructure devices.

PubMed

Kan, Pengzhi; Wang, Yongsheng; Zhao, Suling; Xu, Zheng; Wang, Dawei

2011-04-01

ZnO nanorods are synthesised by a hydrothermal method on ITO glass. Their crystallization and morphology are detected by XRD and SEM, respectively. The results show that the ZnO nanorod array has grown primarily along a direction aligned perpendicular to the ITO substrate. The average height and diameter of the nanorods is about 130 nm and 30 nm, respectively. Then ZnO nano rods/Alq3 heterostructure LEDs are prepared by thermal evaporation of Alq3 molecules. The thicknesses of the Alq3 layers are 130 nm, 150 nm, 170 nm and 190 nm, respectively. The electroluminescence of the devices is detected under different DC bias voltages. The exciton emission of Alq3 is detected in all devices. When the thickness of Alq3 is 130 nm, the UV electroluminescence of ZnO is around 382 nm, and defect emissions around 670 nm and 740 nm are detected. Defect emissions of ZnO nanorods are prominent. When the thickness of Alq3 increases to over 170 nm, it is difficult to observe defect emissions from the ZnO nano rods. In such devices, the exciton emission of Alq3 is more prominent than other emissions under different bias voltage.

Fabrication of high T(sub c) superconductor thin film devices: Center director's discretionary fund

NASA Technical Reports Server (NTRS)

Sisk, R. C.

1992-01-01

This report describes a technique for fabricating superconducting weak link devices with micron-sized geometries etched in laser ablated Y1Ba2Cu3O(x) (YBCO) thin films. Careful placement of the weak link over naturally occurring grain boundaries exhibited in some YBCO thin films produces Superconducting Quantum Interference Devices (SQUID's) operating at 77 K.

The effect of growth temperature on the irreversibility line of MPMG YBCO bulk with Y2O3 layer

NASA Astrophysics Data System (ADS)

Kurnaz, Sedat; Çakır, Bakiye; Aydıner, Alev

2017-07-01

In this study, three kinds of YBCO samples which are named Y1040, Y1050 and Y1060 were fabricated by Melt-Powder-Melt-Growth (MPMG) method without a seed crystal. Samples seem to be single crystal. The compacted powders were located on a crucible with a buffer layer of Y2O3 to avoid liquid to spread on the furnace plate and also to support crystal growth. YBCO samples were investigated by magnetoresistivity (ρ-T) and magnetization (M-T) measurements in dc magnetic fields (parallel to c-axis) up to 5 T. Irreversibility fields (Hirr) and upper critical fields (Hc2) were obtained using 10% and 90% criteria of the normal state resistivity value from ρ-T curves. M-T measurements were carried out using the zero field cooling (ZFC) and field cooling (FC) processes to get irreversible temperature (Tirr). Fitting of the irreversibility line results to giant flux creep and vortex glass models were discussed. The results were found to be consistent with the results of the samples fabricated using a seed crystal. At the fabrication of MPMG YBCO, optimized temperature for crystal growth was determined to be around 1050-1060 °C.

Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor

PubMed Central

TalebiFard, Sahba; Schmidt, Shon; Shi, Wei; Wu, WenXuan; Jaeger, Nicolas A. F.; Kwok, Ezra; Ratner, Daniel M.; Chrostowski, Lukas

2017-01-01

Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU. PMID:28270963

First principles calculation for Gilbert damping constants in ferromagnetic/non-magnetic junctions

NASA Astrophysics Data System (ADS)

Hiramatsu, R.; Miura, D.; Sakuma, A.

2018-05-01

We evaluated an intrinsic α in ferromagnetic (FM)/non-magnetic (NM) junctions from first principles (FM = Co, Fe, and Ni and NM = Cu, Pd, and Pt) to investigate the effects of the inserted NM layer. α is calculated by liner muffin-tin orbital methods based on the torque-correlation model. We confirmed that Gilbert damping is enhanced and saturated as NM thickness increases, and that the enhancement is greater in NM materials having a stronger spin-orbital interaction. By contrast, the calculated FM thickness dependences of α show that Gilbert damping tends to decrease and be saturated as the FM thickness increases. Under the torque-correlation model, the dependences of α on FM and NM thickness can be explained by considering the electronic structure of the total system, including junction interfaces, which exhibit similar behaviors derived by spin pumping theory.

Thickness dependence of exchange anisotropy for (0 0 1) oriented Mn 89Pt 11/NiFe and Mn 80Ir 20/NiFe bilayers

NASA Astrophysics Data System (ADS)

Kume, T.; Yamato, T.; Kato, T.; Tsunashima, S.; Iwata, S.

2007-03-01

Antiferromagnetic layer thickness dependences of exchange anisotropy for (0 0 1) oriented Mn 89Pt 11 ( tAF nm)/Ni 80Fe 20 (5 nm) and Mn 80Ir 20 ( tAF nm)/Ni 80Fe 20 (5 nm) were investigated. For Mn 89Pt 11/NiFe, the exchange bias field appeared at tAF⩾5 nm. This critical thickness was found to be thicker than that of Mn 80Ir 20/NiFe ( tAF=3 nm). The thickness dependence of exchange bias field agreed well with that of 1-fold Fourier amplitude estimated from in-plane torque curves. The large coercivity of about 100 Oe was found for Mn 89Pt 11/NiFe at tAF=30 nm compared to that of Mn 80Ir 20/NiFe. The large coercivity in Mn 89Pt 11/NiFe bilayers seems to result from the large 4-fold anisotropy in their torque curve.

Experimentally determined transport and magnetization ac losses of small cable models constructed from YBCO coated conductors

NASA Astrophysics Data System (ADS)

Šouc, J.; Vojenčiak, M.; Gömöry, F.

2010-04-01

Several short cable models were constructed from YBCO coated conductor (YBCO CC) to study their basic dc and ac electrical properties. They were prepared using superconducting tapes helically wound on fiberglass former of different diameter (5, 8 and 10 mm) with different twist pitch (from 1.7 up to 2.4 cm). The number of parallel-connected tapes ranged from 1 up to 6. The standard length of the models was 11 cm. In one case a 35 cm long model has been manufactured in order to perform a bending test. We observed that the critical currents of the models were proportional to the number of tapes used for their construction. Transport and magnetization ac loss were measured at 36 and 72 Hz.

Asymmetry of the velocity-matching steps in YBCO long Josephson junctions

NASA Astrophysics Data System (ADS)

Revin, L. S.; Pankratov, A. L.; Chiginev, A. V.; Masterov, D. V.; Parafin, A. E.; Pavlov, S. A.

2018-04-01

We carry out experimental and theoretical investigations into the effect of the vortex chain propagation on the current-voltage characteristics of YBa2Cu3O7-δ (YBCO) long Josephson junctions. Samples of YBCO Josephson junctions, fabricated on 24° [001]-tilt bicrystal substrates, have been measured. The improved technology has allowed us to observe and study the asymmetry of the current-voltage characteristics with opposite magnetic fields (Revin et al 2012 J. Appl. Phys. 114 243903), which we believe occurs due to anisotropy of bicrystal substrates (Kupriyanov et al (2013 JETP Lett. 95 289)). Specifically, we examine the flux-flow resonant steps versus the external magnetic field, and study the differential resistance and its relation to oscillation power for opposite directions of vortex propagation.

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

NASA Astrophysics Data System (ADS)

Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

2018-05-01

Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

Effect of Ru thickness on spin pumping in Ru/Py bilayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Behera, Nilamani; Singh, M. Sanjoy; Chaudhary, Sujeet

2015-05-07

We report the effect of Ru thickness (t{sub Ru}) on ferromagnetic resonance (FMR) line-width of Ru(t{sub Ru})/Py(23 nm) bilayer samples grown on Si(100)/SiO{sub 2} substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, α is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, λ{sub sd}. For thicknesses >15 nm (>λ{sub sd}), the damping constant increases with Ru thickness, indicating spin pumpingmore » from Py into Ru.« less

Subsurface optical stimulation of the rat prostate nerves using continuous-wave near-infrared laser radiation

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2012-02-01

Successful identification and preservation of the cavernous nerves (CN), which are responsible for sexual function, during prostate cancer surgery, will require subsurface detection of the CN beneath a thin fascia layer. This study explores optical nerve stimulation (ONS) in the rat with a fascia layer placed over the CN. Two near-IR diode lasers (1455 nm and 1550 nm lasers) were used to stimulate the CN in CW mode with a 1-mm-diameter spot in 8 rats. The 1455 nm wavelength provides an optical penetration depth (OPD) of ~350 μm, while 1550 nm provides an OPD of ~1000 μm (~3 times deeper than 1455 nm and 1870 nm wavelengths previously tested). Fascia layers with thicknesses of 85 - 600 μm were placed over the CN. Successful ONS was confirmed by an intracavernous pressure (ICP) response in the rat penis at 1455 nm through fascia 110 μm thick and at 1550 nm through fascia 450 μm thick. Higher incident laser power was necessary and weaker and slower ICP responses were observed as fascia thickness was increased. Subsurface ONS of the rat CN at a depth of 450 μm using a 1550 nm laser is feasible.

Microstructural investigation of current barriers in high temperature superconducting tapes and coated conductors

NASA Astrophysics Data System (ADS)

Reeves, Jodi Lynn

Microstructural barriers to supercurrent occur on many length scales in all high temperature oxide superconductors. Eliminating microstructural barriers is key to making these potentially valuable materials more favorable for commercial applications. In silver-sheathed Bi2Sr2CaCu 2Ox (Bi-2212) tapes and multifilaments, the principal barriers on the scale of 10--100's of micrometers are bubbling, porosity, second phase particles, and poorly aligned grains. In state-of-the-art YBa2 Cu3Ox (YBCO) coated conductors, supercurrent barriers on the 0.1--100mum scale are grain boundaries. This thesis work clarifies the role of grain boundaries in the nickel substrate of RABiTS (Rolling Assisted Biaxially Textured Substrate) coated conductors. Plan-view SEM imaging, focused ion beam cutting, magneto-optical imaging and grain orientation mapping were used to determine barriers to supercurrent. Experiments showed enhanced magnetic flux penetration, and hence reduced Jc, in the YBCO above nearly all nickel grain boundaries with misorientation angles (theta) greater than 5°, independent of the rotation axis. Monochromatic backscattered electron Kikuchi pattern percolation maps imply there is a fully connected current path through the YBCO microstructure within the chosen tolerance angle criterion of the map. However, it is the grain boundary map that displays the constrictions of the current path. Therefore, grain boundary maps are better tools for illustrating supercurrent barriers than percolation maps. Grain boundary maps and grain orientation maps were used to investigate how the texture of the substrate was transferred to the buffer layers and to the superconductor. Most grasp boundaries in the nickel were replicated in the buffer and superconductor layers with the same misorientation angle. Anisotropic growth and/or surface energy minimization may be responsible for the improvement in c-axis alignment in the YBCO over the buffer layer. However, the YBCO mosaic spread did not eliminate high angle grain boundaries, since >5° boundaries were still seen in YBCO grain boundary maps. The results of this study on microstructural current barriers show that Jc improvements in RABiTS-type coated conductors require eliminating theta > 5° boundaries in the nickel substrate.

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (more » $$20\\bar{2}$$$\\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\\bar{2}$$$\\bar{1}$$) LEDs.« less

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

DOE PAGES

Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.; ...

2017-01-26

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar (more » $$20\\bar{2}$$$\\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\\bar{2}$$$\\bar{1}$$) LEDs.« less

Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

PubMed

Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

2016-05-04

Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

Effective method to control the levitation force and levitation height in a superconducting maglev system

NASA Astrophysics Data System (ADS)

Yang, Peng-Tao; Yang, Wan-Min; Wang, Miao; Li, Jia-Wei; Guo, Yu-Xia

2015-11-01

The influence of the width of the middle magnet in the permanent magnet guideways (PMGs) on the levitation force and the levitation height of single-domain yttrium barium copper oxide (YBCO) bulks has been investigated at 77 K under the zero field cooled (ZFC) state. It is found that the largest levitation force can be obtained in the system with the width of the middle magnet of the PMG equal to the size of the YBCO bulk when the gap between the YBCO bulk and PMG is small. Both larger levitation force and higher levitation height can be obtained in the system with the width of the middle magnet of the PMG larger than the size of the YBCO bulk. The stiffness of the levitation force between the PMG and the YBCO bulk is higher in the system with a smaller width of the middle magnet in the PMG. These results provide an effective way to control the levitation force and the levitation height for the superconducting maglev design and applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51342001 and 50872079), the Key-grant Project of Chinese Ministry of Education (Grant No. 311033), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120202110003), the Innovation Team in Shaanxi Province, China (Grant No. 2014KTC-18), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. GK201101001 and GK201305014), and the Outstanding Doctoral Thesis Foundation Project of Shaanxi Normal University, China (Grant Nos. X2011YB08 and X2012YB05).

TOPICAL REVIEW: Review of a chemical approach to YBa2Cu3O7-x-coated superconductors—metalorganic deposition using trifluoroacetates

NASA Astrophysics Data System (ADS)

Araki, Takeshi; Hirabayashi, Izumi

2003-11-01

Large-area, uniform, high critical current density (Jc) YBa2Cu3O7-x (YBCO) superconductor films are now routinely obtained by metalorganic deposition using trifluoroacetates (TFA-MOD). This method does not require any expensive vacuum apparatus at any time during the whole process. Thus, TFA-MOD is regarded as one of the most suitable candidates for fabricating a YBCO tape for many high-power applications. This method originated from an electron beam process using BaF2 developed by Mankiewich et al. Afterwards, Gupta et al reported using TFA-MOD to prepare a similar precursor film. These two ex situ processes used fluorides instead of BaCO3 to avoid the fatal deterioration in Jc, which is caused in the resulting films through metal carboxylic groups. Fluorides not only avoid such deterioration but also lead to perfectly c-axis-oriented epitaxial crystal growth. In conventional metalorganic deposition, nucleation in the precursor film causes random orientation in the resulting film. However, in TFA-MOD, nanocrystallites in the precursor film never cause such disorder. Furthermore, during the firing process of TFA-MOD, water and HF gas diffuse quickly between the film surface and growth front of the YBCO layer. This diffusion never limits the growth rate of YBCO. What distinguishes TFA-MOD from conventional metalorganic deposition? What happens during heat treatment? In this paper, we discuss all the TFA-MOD processes and the peculiar growth scheme of the YBCO layer in TFA-MOD using the model of a quasi-liquid network. In addition, we review the history of TFA-MOD and recent results and discuss the prospects of future applications.

Dependencies of microstructure and stress on the thickness of GdBa2Cu3O7 − δ thin films fabricated by RF sputtering

PubMed Central

2013-01-01

GdBa2Cu3O7 − δ (GdBCO) films with different thicknesses from 200 to 2,100 nm are deposited on CeO2/yttria-stabilized zirconia (YSZ)/CeO2-buffered Ni-W substrates by radio-frequency magnetron sputtering. Both the X-ray diffraction and scanning electron microscopy analyses reveal that the a-axis grains appear at the upper layers of the films when the thickness reaches to 1,030 nm. The X-ray photoelectron spectroscopy measurement implies that the oxygen content is insufficient in upper layers beyond 1,030 nm for a thicker film. The Williamson-Hall method is used to observe the variation of film stress with increasing thickness of our films. It is found that the highest residual stresses exist in the thinnest film, while the lowest residual stresses exist in the 1,030-nm-thick film. With further increasing film thickness, the film residual stresses increase again. However, the critical current (Ic) of the GdBCO film first shows a nearly linear increase and then shows a more slowly enhancing to a final stagnation as film thickness increases from 200 to 1,030 nm and then to 2,100 nm. It is concluded that the roughness and stress are not the main reasons which cause the slow or no increase in Ic. Also, the thickness dependency of GdBa2Cu3O7 − δ films on the Ic is attributed to three main factors: a-axis grains, gaps between a-axis grains, and oxygen deficiency for the upper layers of a thick film. PMID:23816137

Controlling contamination in Mo/Si multilayer mirrors by Si surface capping modifications

NASA Astrophysics Data System (ADS)

Malinowski, Michael E.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.; Mrowka, Stanley; Soufli, Regina

2002-07-01

The performance of Mo/Si multilayer mirrors (MLMs) used to reflect UV (EUV) radiation in an EUV + hydrocarbon (NC) vapor environment can be improved by optimizing the silicon capping layer thickness on the MLM in order to minimize the initial buildup of carbon on MLMs. Carbon buildup is undesirable since it can absorb EUV radiation and reduce MLM reflectivity. A set of Mo/Si MLMs deposited on Si wafers was fabricated such that each MLM had a different Si capping layer thickness ranging form 2 nm to 7 nm. Samples from each MLM wafer were exposed to a combination of EUV light + (HC) vapors at the Advanced Light Source (ALS) synchrotron in order to determine if the Si capping layer thickness affected the carbon buildup on the MLMs. It was found that the capping layer thickness had a major influence on this 'carbonizing' tendency, with the 3 nm layer thickness providing the best initial resistance to carbonizing and accompanying EUV reflectivity loss in the MLM. The Si capping layer thickness deposited on a typical EUV optic is 4.3 nm. Measurements of the absolute reflectivities performed on the Calibration and Standards beamline at the ALS indicated the EUV reflectivity of the 3 nm-capped MLM was actually slightly higher than that of the normal, 4 nm Si-capped sample. These results show that he use of a 3 nm capping layer represents an improvement over the 4 nm layer since the 3 nm has both a higher absolute reflectivity and better initial resistance to carbon buildup. The results also support the general concept of minimizing the electric field intensity at the MLM surface to minimize photoelectron production and, correspondingly, carbon buildup in a EUV + HC vapor environment.

Transparent Nanotubular TiO₂ Photoanodes Grown Directly on FTO Substrates.

PubMed

Paušová, Šárka; Kment, Štěpán; Zlámal, Martin; Baudys, Michal; Hubička, Zdeněk; Krýsa, Josef

2017-05-10

This work describes the preparation of transparent TiO₂ nanotube (TNT) arrays on fluorine-doped tin oxide (FTO) substrates. An optimized electrolyte composition (0.2 mol dm -3 NH₄F and 4 mol dm -3 H₂O in ethylene glycol) was used for the anodization of Ti films with different thicknesses (from 100 to 1300 nm) sputtered on the FTO glass substrates. For Ti thicknesses 600 nm and higher, anodization resulted in the formation of TNT arrays with an outer nanotube diameter around 180 nm and a wall thickness around 45 nm, while for anodized Ti thicknesses of 100 nm, the produced nanotubes were not well defined. The transmittance in the visible region (λ = 500 nm) varied from 90% for the thinnest TNT array to 65% for the thickest TNT array. For the fabrication of transparent TNT arrays by anodization, the optimal Ti thickness on FTO was around 1000 nm. Such fabricated TNT arrays with a length of 2500 nm exhibit stable photocurrent densities in aqueous electrolytes (~300 µA cm -2 at potential 0.5 V vs. Ag/AgCl). The stability of the photocurrent response and a sufficient transparency (≥65%) enables the use of transparent TNT arrays in photoelectrochemical applications when the illumination from the support/semiconductor interface is a necessary condition and the transmitted light can be used for another purpose (photocathode or photochemical reaction in the electrolyte).

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Birkett, Martin; Penlington, Roger

2016-07-01

We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

I-V Characteristics vs. Spatial Dissipation Maps in YBCO Grain Boundary on Bicrystal Substrates

NASA Astrophysics Data System (ADS)

Kwon, Chuhee; Yamamoto, Megumi; Pottish, Samuel; Haugan, Timothy; Barnes, Paul

2008-03-01

Grain boundary (GB) properties of YBCO films on SrTiO3 bicrystal substrates with 24 degree misorientations are examined by transport and scanning laser microscopy (SLM) techniques. Thermoelectric SLM clearly shows the location of grain boundaries, and variable temperature SLM confirms that GB has lower Tc. A series of I-V measured in superconducting states exhibit clear step-like features identified in earlier papers as sub-gap structures. The low temperature SLM shows a close relation between the step-like features and the local dissipation pattern in GB. We believe that the activation of Fiske steps is responsible for the step-like I-V, and SLM images show the spatial pattern of the self-excited resonance in GB. We will also discuss how Ca-doping and nanoparticle additions on YBCO affect the junction properties.

Conductor-backed coplanar waveguide resonators of Y-Ba-Cu-O and Tl-Ba-Ca-Cu-O on LaAlO3

NASA Technical Reports Server (NTRS)

Miranda, F. A.; Bhasin, K. B.; Stan, M. A.; Kong, K. S.; Itoh, T.

1992-01-01

Conductor-backed coplanar waveguide (CBCPW) resonators operating at 10.8 GHz have been fabricated from Tl-Ba-Ca-O (TBCCO) and Y-Ba-Cu-O (YBCO) thin films on LaAlO3. The resonators consist of a coplanar waveguide (CPW) patterned on the superconducting film side of the LaAlO3 substrate with a gold ground plane coated on the opposite side. These resonators were tested in the temperature range from 14 to 106 K. At 77 K, the best of our TBCCO and YBCO resonators have an unloaded quality factor (Qo) 7 and 4 times, respectively, larger than that of a similar all-gold resonator. In this study, the Qo's of the TBCCO resonators were larger than those of their YBCO counterparts throughout the aforementioned temperature range.

Effect of grain-alignment on the levitation force of melt-processed YBCO bulk superconductors

NASA Astrophysics Data System (ADS)

Yang, Wan-min; Zhou, Lian; Feng, Yong; Zhang, Ping-xiang; Wu, Min-zhi; Wu, Xiao-zu; Gawalek, W.

1999-07-01

Single-domain YBCO bulk superconductors have been fabricated by Top Seeded Melt Slow Cooling Growth(TSSCG) process. Two typical YBCO cylinder samples with differential grain-alignment were selected for the investigation of the relationship between the grain-alignment and the levitation force under the same testing condition at liquid nitrogen temperature. It is found that the levitation force values is much different for the two samples, the levitation force of the sample with H par c-axis is more than two times higher than that of the samples with H ⊥ c-axis. So it is necessary to take account of this anisotropy in practical applications. The relationship between a magnet and a superconductor can be well described with a double exponential function. All the results are discussed in details.

Impact of oxygen diffusion on superconductivity in YBa2Cu3O7 -δ thin films studied by positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Reiner, M.; Gigl, T.; Jany, R.; Hammerl, G.; Hugenschmidt, C.

2018-04-01

The oxygen deficiency δ in YBa2Cu3O7 -δ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We apply (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line to study in situ the temperature dependence of the oxygen concentration and its depth profile in single crystalline YBCO film grown on SrTiO3 (STO) substrates. The oxygen diffusion during tempering is found to lead to a distinct depth dependence of δ , which is not accessible using x-ray diffraction. A steady state reached within a few minutes is defined by both, the oxygen exchange at the surface and at the interface to the STO substrate. Moreover, we reveal the depth-dependent critical temperature Tc in the as prepared and tempered YBCO film.

Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

NASA Astrophysics Data System (ADS)

Kaiju, H.; Kasa, H.; Komine, T.; Mori, S.; Misawa, T.; Abe, T.; Nishii, J.

2015-05-01

We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96-1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10-20 nm can be expected to function as spin-filter devices.

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

A 15-pole high temperature superconductor filter for radar applications

NASA Astrophysics Data System (ADS)

Yu, Xiao; Xi, Weibin; Wu, Songtao

2018-06-01

This paper presents a compact and high first harmonic frequency resonator. The characteristics of this resonator are theoretically analyzed. A highly selective 15-pole Chebyshev high temperature superconducting ultra-high frequency narrowband filter for radar applications was fabricated by using this resonator. The filter has a center frequency of 495 MHz and a fractional bandwidth of 1%. The first harmonic frequency is more than 3.3 times the fundamental frequency. The measured filter shows excellent selectivity, better than 85 dB/1 MHz skirt slopes, and more than 85 dB of rejection at 497.5 MHz from the band edge. The filter was fabricated on a 2 inch YBCO thin film with a 0.5 mm thick MgO substrate. The experimental results are consistent with the simulations.

Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basu, T.; Kumar, M.; Som, T., E-mail: tsom@iopb.res.in

2015-09-14

Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film.more » Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.« less

Architecture for high critical current superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.

2002-01-01

Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer YBCO structures where individual YBCO layers are separated by a layer of an insulating material such as CeO.sub.2 and the like, a layer of a conducting material such as strontium ruthenium oxide and the like or by a second superconducting material such as SmBCO and the like.

Magnetoresistivity and microstructure of YBa2Cu3Oy prepared using planetary ball milling

NASA Astrophysics Data System (ADS)

Hamrita, A.; Ben Azzouz, F.; Madani, A.; Ben Salem, M.

2012-01-01

We have studied the microstructure and the magnetoresistivity of polycrystalline YBa2Cu3Oy (YBCO or Y-123 for brevity) embedded with nanoparticles of Y-deficient YBCO, generated by the planetary ball milling technique. Bulk samples were synthesized from a precursor YBCO powder, which was prepared from commercial high purity Y2O3, Ba2CO3 and CuO via a one-step annealing process in air at 950 °C. After planetary ball milling of the precursor, the powder was uniaxially pressed and subsequently annealed at 950 °C in air. Phase analysis by X-ray diffraction (XRD), granular structure examination by scanning electron microscopy (SEM), microstructure investigation by transmission electron microscopy (TEM) coupled with energy dispersive X-ray spectroscopy (EDXS) were carried out. TEM analyses show that nanoparticles of Y-deficient YBCO, generated by ball milling, are embedded in the superconducting matrix. Electrical resistance as a function of temperature, ρ(T), revealed that the zero resistance temperature, Tco, is 84.5 and 90 K for the milled and unmilled samples respectively. The milled ceramics exhibit a large magnetoresistance in weak magnetic fields at liquid nitrogen temperature. This attractive effect is of high significance as it makes these materials promising candidates for practical application in magnetic field sensor devices.

The optimal thickness of a transmission-mode GaN photocathode

NASA Astrophysics Data System (ADS)

Wang, Xiao-Hui; Shi, Feng; Guo, Hui; Hu, Cang-Lu; Cheng, Hong-Chang; Chang, Ben-Kang; Ren, Ling; Du, Yu-Jie; Zhang, Jun-Ju

2012-08-01

A 150-nm-thick GaN photocathode with a Mg doping concentration of 1.6 × 1017 cm-3 is activated by Cs/O in an ultrahigh vacuum chamber, and a quantum efficiency (QE) curve of the negative electron affinity transmission-mode (t-mode) of the GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5 × 104 cm·s-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of GaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.

Nanomagnetic behavior of fullerene thin films in Earth magnetic field in dark and under polarization light influences.

PubMed

Koruga, Djuro; Nikolić, Aleksandra; Mihajlović, Spomenko; Matija, Lidija

2005-10-01

In this paper magnetic fields intensity of C60 thin films of 60 nm and 100 nm thickness under the influence of polarization lights are presented. Two proton magnetometers were used for measurements. Significant change of magnetic field intensity in range from 2.5 nT to 12.3 nT is identified as a difference of dark and polarization lights of 60 nm and 100 nm thin films thickness, respectively. Specific power density of polarization light was 40 mW/cm2. Based on 200 measurement data average value of difference between magnetic intensity of C60 thin films, with 60 nm and 100 nm thickness, after influence of polarization light, were 3.9 nT and 9.9 nT respectively.

Enhanced Electro-Static Discharge Endurance of GaN-Based Light-Emitting Diodes with Specially Designed Electron Blocking Layer

NASA Astrophysics Data System (ADS)

Wang, Chunxia; Zhang, Xiong; Guo, Hao; Chen, Hongjun; Wang, Shuchang; Yang, Hongquan; Cui, Yiping

2013-10-01

GaN-based light-emitting diodes (LEDs) with specially designed electron blocking layers (EBLs) between the multiple quantum wells (MQWs) and the top p-GaN layer have been developed. The EBLs consist of Mg-doped p-AlGaN/GaN superlattice (SL) with the layer thickness of p-AlGaN varied from 1 to 10 nm and the layer thickness of p-GaN fixed at 1 nm in this study. It was found that under a 2000 V reverse bias voltage condition, the electro-static discharge (ESD) yield increased from 61.98 to 99.51% as the thickness of p-AlGaN in the EBLs was increased from 1 to 10 nm. Since the ESD yield was 97.80%, and maximum value for LEDs' light output power (LOP) and minimum value for the forward voltage (Vf) were achieved when the thickness of p-AlGaN in the EBLs was 9 nm with a 20 mA injection current, it was concluded that the p-AlGaN/GaN SL EBLs with the combination of 9-nm-thick p-AlGaN and 1-nm-thick p-GaN would be beneficial to the fabrication of the GaN-based LEDs with high brightness, high ESD endurance, and low Vf.

Electrical, optical and structural properties of transparent conducting Al doped ZnO (AZO) deposited by sol-gel spin coating

NASA Astrophysics Data System (ADS)

Tonny, Kaniz Naila; Rafique, Rosaleena; Sharmin, Afrina; Bashar, Muhammad Shahriar; Mahmood, Zahid Hasan

2018-06-01

Al doped ZnO (AZO) films are fabricated by using sol-gel spin coating method and changes in electrical, optical and structural properties due to variation in film thickness is studied. AZO films provide c-axis orientation along the (002) plane and peak sharpness increased with film thickness is evident from XRD analysis. Conductivity (σ) of AZO films has increased from 2.34 (Siemens/cm) to 20156.27 (Siemens/cm) whereas sheet resistance (Rsh) decreases from 606300 (ohms/sq.) to 2.08 (ohm/sq.) with increase of film thickness from 296 nm to 1030 nm. Optical transmittance (T%) of AZO films is decreased from around 82% to 62% in the visible region. And grain size (D) of AZO thin films has been found to increase from 19.59 nm to 25.25 nm with increase of film thickness. Figure of Merit is also calculated for prepared sample of AZO. Among these four sample of AZO thin films, L-15 sample (having thickness in 895 nm) has provided highest figure of merit which is 5.49*10^-4 (Ω-1).

Photoconductivity of Macroporous and Nonporous Silicon with Ultrathin Oxide Layers

NASA Astrophysics Data System (ADS)

Konin, K. P.; Goltvyansky, Yu. V.; Karachevtseva, L. A.; Karas, M. I.; Morozovs'ka, D. V.

2018-06-01

The photoconductivity of macroporous silicon with ultrathin oxide layers of 2.7-30 nm in thickness at short-wave optical excitation was studied. The following feature was revealed: a nonmonotonic change in the photoconductivity as a function of the oxide thickness. At a minimum thickness, the photoconductivity is negative; in the interval 6.8-15 nm, it is very much suppressed; at 15-30 nm, it is positive. Suppression of photoconductivity over a wide thickness range indicates an abnormally high concentration of traps and capture centers for charge carriers of both signs. Such a change in the photoconductivity corresponds to the known results on the continuous morphological rearrangement of the oxide in the thickness range from 6-7 nm to 12-15 nm from the coesite-like (4-membered SiO4 tetrahedra rings) to the tridymite-like (6-membered SiO4 tetrahedra rings). The suppression of photoconductivity in the intermediate range probably demonstrates the collective, antisynergetic action of these coexisting oxide forms on the nonequilibrium charge carriers. These coexisting oxide forms manifest themselves as an unusual collective defect.

Origins of enhanced thermoelectric power factor in topologically insulating Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Wei; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070; Chi, Hang

2016-01-25

In this research, we report the enhanced thermoelectric power factor in topologically insulating thin films of Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} with a thickness of 6–200 nm. Measurements of scanning tunneling spectroscopy and electronic transport show that the Fermi level lies close to the valence band edge, and that the topological surface state (TSS) is electron dominated. We find that the Seebeck coefficient of the 6 nm and 15 nm thick films is dominated by the valence band, while the TSS chiefly contributes to the electrical conductivity. In contrast, the electronic transport of the reference 200 nm thick film behaves similar to bulk thermoelectric materialsmore » with low carrier concentration, implying the effect of the TSS on the electronic transport is merely prominent in the thin region. The conductivity of the 6 nm and 15 nm thick film is obviously higher than that in the 200 nm thick film owing to the highly mobile TSS conduction channel. As a consequence of the enhanced electrical conductivity and the suppressed bipolar effect in transport properties for the 6 nm thick film, an impressive power factor of about 2.0 mW m{sup −1} K{sup −2} is achieved at room temperature for this film. Further investigations of the electronic transport properties of TSS and interactions between TSS and the bulk band might result in a further improved thermoelectric power factor in topologically insulating Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} thin films.« less

Broadband operation of rolled-up hyperlenses

NASA Astrophysics Data System (ADS)

Schwaiger, Stephan; Rottler, Andreas; Bröll, Markus; Ehlermann, Jens; Stemmann, Andrea; Stickler, Daniel; Heyn, Christian; Heitmann, Detlef; Mendach, Stefan

2012-06-01

This work is related to an earlier publication [Schwaiger , Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.102.163903 102, 163903 (2009)], where we demonstrated by means of fiber-based transmission measurements that rolled-up Ag-(In)GaAs multilayers represent three-dimensional metamaterials with a plasma edge which is tunable over the visible and near-infrared regime by changing the thickness ratio of Ag and (In)GaAs, and predicted by means of finite-difference time-domain simulations that hyperlensing occurs at this frequency-tunable plasma edge. In the present work we develop a method to measure reflection curves on these structures and find that they correspond to the same tunable plasma edge. We find that retrieving the effective parameters from transmission and reflection data fails, because our realized metamaterials exceed the single-layer thicknesses of 5nm, which we analyze to be the layer thickness limit for the applicability of effective parameter retrieval. We show that our realized structures nevertheless have the functionality of an effective metamaterial by supplying a detailed finite-difference time-domain study which compares light propagation through our realized structure (17-nm-thick Ag layers and 34-nm-thick GaAs layers) and light propagation through an idealized structure of the same total thickness but with very thin layers [2-nm-thick Ag layers and 4-nm-thick (In)GaAs layers]. In particular, our simulations predict broadband hyperlensing covering a large part of the visible spectrum for both the idealized and our realized structures.

Levitation force of melt-textured YBCO superconductors under non-quasi-static situation

NASA Astrophysics Data System (ADS)

Zhao, Z. M.; Xu, J. M.; Yuan, X. Y.; Zhang, C. P.

2018-06-01

The superconducting levitation force of a simple superconductor-magnet system under non-quasi-static situation is investigated experimentally. Two yttrium barium copper oxide (YBCO) samples with different performances are chosen from two small batches of samples prepared by the top-seeded melt-textured growth process. The residual carbon content of the precursor powders of the two batches is different due to different heat treatment processes. During the experimental process for measuring the levitation force, the value of the relative speed between the YBCO sample and the permanent magnet is higher than that in conventional studies. The variation characteristics of the superconducting levitation force are analyzed and a crossing phenomenon in the force-displacement hysteresis curves is observed. The results indicate that the superconducting levitation force is different due to the different residual carbon contents. As residual carbon contents reduce, the crossing phenomenon is more obvious accordingly.

Magnetic suspension using high temperature superconducting cores

NASA Technical Reports Server (NTRS)

Scurlock, R. G.

1992-01-01

The development of YBCO high temperature superconductors, in wire and tape forms, is rapidly approaching the point where the bulk transport current density j vs magnetic field H characteristics with liquid nitrogen cooling will enable its use in model cores. On the other hand, BSCCO high temperature superconductor in wire form has poor j-H characteristics at 77 K today, although with liquid helium or hydrogen cooling, it appears to be superior to NbTi superconductor. Since liquid nitrogen cooling is approx. 100 times cheaper than liquid helium cooling, the use of YBCO is very attractive for use in magnetic suspension. The design is discussed of a model core to accommodate lift and drag loads up to 6000 and 3000 N respectively. A comparison is made between the design performance of a liquid helium cooled NbTi (or BSCCO) superconducting core and a liquid nitrogen cooled YBCO superconducting core.

The Effects of Grain Boundaries on the Current Transport Properties in YBCO-Coated Conductors

NASA Astrophysics Data System (ADS)

Yang, Chao; Xia, Yudong; Xue, Yan; Zhang, Fei; Tao, Bowan; Xiong, Jie

2015-10-01

We report a detailed study of the grain orientations and grain boundary (GB) networks in Y2O3 films grown on Ni-5 at.%W substrates. Electron back scatter diffraction (EBSD) exhibited different GB misorientation angle distributions, strongly decided by Y2O3 films with different textures. The subsequent yttria-stabilized zirconia (YSZ) barrier and CeO2 cap layer were deposited on Y2O3 layers by radio frequency sputtering, and YBa2Cu3O7-δ (YBCO) films were deposited by pulsed laser deposition. For explicating the effects of the grain boundaries on the current carry capacity of YBCO films, a percolation model was proposed to calculate the critical current density ( J c) which depended on different GB misorientation angle distributions. The significantly higher J c for the sample with sharper texture is believed to be attributed to improved GB misorientation angle distributions.

La0.7Sr0.3MnO3: A single, conductive-oxide buffer layer for the development of YBa2Cu3O7-δ coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Kang, B. W.; Sathyamurthy, S.; Goyal, A.; Christen, D. K.

2001-10-01

Coated conductor applications in power technologies require stabilization of the high-temperature superconducting (HTS) layers against thermal runaway. Conductive La0.7Sr0.3MnO3 (LSMO) has been epitaxially grown on biaxially textured Ni substrates as a single buffer layer. The subsequent epitaxial growth of YBa2Cu3O7-δ (YBCO) coatings by pulsed laser deposition yielded self-field critical current densities (Jc) of 0.5×106A/cm2 at 77 K, and provided good electrical connectivity over the entire structure (HTS+conductive-buffer+metal substrate). Property characterizations of YBCO/LSMO/Ni architecture revealed excellent crystallographic and morphological properties. These results have demonstrated that LSMO, used as a single, conductive buffer layer, may offer potential for use in fully stabilized YBCO coated conductors.

Dopant mapping in thin FIB prepared silicon samples by Off-Axis Electron Holography.

PubMed

Pantzer, Adi; Vakahy, Atsmon; Eliyahou, Zohar; Levi, George; Horvitz, Dror; Kohn, Amit

2014-03-01

Modern semiconductor devices function due to accurate dopant distribution. Off-Axis Electron Holography (OAEH) in the transmission electron microscope (TEM) can map quantitatively the electrostatic potential in semiconductors with high spatial resolution. For the microelectronics industry, ongoing reduction of device dimensions, 3D device geometry, and failure analysis of specific devices require preparation of thin TEM samples, under 70 nm thick, by focused ion beam (FIB). Such thicknesses, which are considerably thinner than the values reported to date in the literature, are challenging due to FIB induced damage and surface depletion effects. Here, we report on preparation of TEM samples of silicon PN junctions in the FIB completed by low-energy (5 keV) ion milling, which reduced amorphization of the silicon to 10nm thick. Additional perpendicular FIB sectioning enabled a direct measurement of the TEM sample thickness in order to determine accurately the crystalline thickness of the sample. Consequently, we find that the low-energy milling also resulted in a negligible thickness of electrically inactive regions, approximately 4nm thick. The influence of TEM sample thickness, FIB induced damage and doping concentrations on the accuracy of the OAEH measurements were examined by comparison to secondary ion mass spectrometry measurements as well as to 1D and 3D simulations of the electrostatic potentials. We conclude that for TEM samples down to 100 nm thick, OAEH measurements of Si-based PN junctions, for the doping levels examined here, resulted in quantitative mapping of potential variations, within ~0.1 V. For thinner TEM samples, down to 20 nm thick, mapping of potential variations is qualitative, due to a reduced accuracy of ~0.3 V. This article is dedicated to the memory of Zohar Eliyahou. Copyright © 2014 Elsevier B.V. All rights reserved.

AFM-based force spectroscopy on polystyrene brushes: effect of brush thickness on protein adsorption.

PubMed

Hentschel, Carsten; Wagner, Hendrik; Smiatek, Jens; Heuer, Andreas; Fuchs, Harald; Zhang, Xi; Studer, Armido; Chi, Lifeng

2013-02-12

Herein we present a study on nonspecific binding of proteins at highly dense packed hydrophobic polystyrene brushes. In this context, an atomic force microscopy tip was functionalized with concanavalin A to perform single-molecule force spectroscopy measurements on polystyrene brushes with thicknesses of 10 and 60 nm, respectively. Polystyrene brushes with thickness of 10 nm show an almost two times stronger protein adsorption than brushes with a thickness of 60 nm: 72 pN for the thinner and 38 pN for the thicker layer, which is in qualitative agreement with protein adsorption studies conducted macroscopically by fluorescence microscopy.

An achromatic four-mirror compensator for spectral ellipsometers

NASA Astrophysics Data System (ADS)

Kovalev, V. I.; Rukovishnikov, A. I.; Kovalev, S. V.; Kovalev, V. V.; Rossukanyi, N. M.

2017-07-01

Measurement and calculation results are presented that confirm that design four-mirror compensators can be designed for the spectral range of 200-2000 nm that is widely used in modern spectral ellipsometers. Measurements and calculations according to standard ellipsometric programs have been carried out on a broadband LED spectral ellipsometer with switching of orthogonal polarization states. Mirrors with the structure of glass substrate/Al2O3 layer (20-30 nm thick)/Al layer (150 nm thick)/upper Al2O3 layer (with specified thickness d) have been prepared by vacuum-evaporation method. It is shown that the phase-shift spectra of a four-mirror compensator, two mirrors of which have a native oxide 5.5 nm thick and the two others of which have an oxide layer 36 nm thick, measured on the ellipsometer, are flattened in comparison with similar spectra of a compensator, all four mirrors of which have a native oxide, especially in the short-wavelength spectral region. The results of calculating the phase-shift spectra of the four-mirror compensator with six variable parameters (angles of incidence of radiation on the mirrors and thicknesses of oxide layers on four mirrors) are presented. High-quality achromatization in a wide spectral range can be achieved for certain sets of parameters.

Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

NASA Astrophysics Data System (ADS)

Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

2018-03-01

In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp; AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków; Nozaki, Takayuki

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes inmore » the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.« less

Characterization of crystal structure features of a SIMOX substrate

NASA Astrophysics Data System (ADS)

Eidelman, K. B.; Shcherbachev, K. D.; Tabachkova, N. Yu.; Podgornii, D. A.; Mordkovich, V. N.

2015-12-01

The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thickness of the top Si and a continuous buried oxide layer (BOX), the crystalline quality of the top Si layer). Under used implantation conditions, the thickness of the top Si and BOX layers was 200 nm and 400 nm correspondingly. XRD intensity distribution near Si(0 0 4) reciprocal lattice point was investigated. According to the oscillation period of the diffraction reflection curve defined thickness of the overtop silicon layer (220 ± 2) nm. HRTEM determined the thickness of the oxide layer (360 nm) and revealed the presence of Si islands with a thickness of 30-40 nm and a length from 30 to 100 nm in the BOX layer nearby "BOX-Si substrate" interface. The Si islands are faceted by (1 1 1) and (0 0 1) faces. No defects were revealed in these islands. The signal from Si, which corresponds to the particles in an amorphous BOX matrix, was revealed by AES in the depth profiles. Amount of Si single crystal phase at the depth, where the particles are deposited, is about 10-20%.

Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.

PubMed

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Ahn, Shihyun; Hussain, Shahzada Qamar; Park, Jinjoo; Jung, Junhee; Lee, Chan; Song, Bong-Shik; Choi, Byoungdeog; Lee, Youn-Jung; Iftiquar, S M; Yi, Junsin

2015-03-01

Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for opto-electronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (Isc) of solar cells. A TCO/Ag/TCO multi-layer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.

Dual-Wavelength InGaAsSb/AlGaAsSb Quantum-Well Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Nguyen, Tien Dai; Hwang, Jehwan; Kim, Yeongho; Kim, Eui-Tae; Kim, Jun Oh; Lee, Sang Jun

2018-05-01

We have investigated the structural characteristics and the device performance of three-stack InGaAsSb/AlGaAsSb quantum-well (QW) light-emitting diodes (LEDs) grown by using molecular beam epitaxy. The QW LED structure with an 8-nm well thickness had a single peak emission wavelength of 2.06 μm at an injection current of 0.3 A at room temperature. However, the QWLEDs with three different well thicknesses of 5-, 10-, and 15-nm had double peak emission wavelengths of 1.97 and 2.1 μm at an injection current of 1.1 A, which were associated with the radiative recombination in the QW with a 5-nm well thickness and the overlapped emission from the QWs with 10- and 15-nm well thicknesses, respectively.

Operating characteristics of superconducting fault current limiter using 24kV vacuum interrupter driven by electromagnetic repulsion switch

NASA Astrophysics Data System (ADS)

Endo, M.; Hori, T.; Koyama, K.; Yamaguchi, I.; Arai, K.; Kaiho, K.; Yanabu, S.

2008-02-01

Using a high temperature superconductor, we constructed and tested a model Superconducting Fault Current Limiter (SFCL). SFCL which has a vacuum interrupter with electromagnetic repulsion mechanism. We set out to construct high voltage class SFCL. We produced the electromagnetic repulsion switch equipped with a 24kV vacuum interrupter(VI). There are problems that opening speed becomes late. Because the larger vacuum interrupter the heavier weight of its contact. For this reason, the current which flows in a superconductor may be unable to be interrupted within a half cycles of current. In order to solve this problem, it is necessary to change the design of the coil connected in parallel and to strengthen the electromagnetic repulsion force at the time of opening the vacuum interrupter. Then, the design of the coil was changed, and in order to examine whether the problem is solvable, the current limiting test was conducted. We examined current limiting test using 4 series and 2 parallel-connected YBCO thin films. We used 12-centimeter-long YBCO thin film. The parallel resistance (0.1Ω) is connected with each YBCO thin film. As a result, we succeed in interrupting the current of superconductor within a half cycle of it. Furthermore, series and parallel-connected YBCO thin film could limit without failure.

Observation of Sinusoidal Voltage Behaviour in Silver Doped YBCO

NASA Astrophysics Data System (ADS)

Altinkok, Atilgan; Olutas, Murat; Kilic, Kivilcim; Kilic, Atilla

The influence of bi-directional square wave (BSW) current was investigated on the evolution of the V - t curves at different periods (P) , temperatures and external magnetic fields. It was observed that slow transport relaxation measurements result in regular sinusoidal voltage oscillations which were discussed mainly in terms of the dynamic competition between pinning and depinning.The symmetry in the voltage oscillations was attributed to the elastic coupling between the flux lines and the pinning centers along grain boundaries and partly inside the grains. This case was also correlated to the equality between flux entry and exit along the YBCO/Ag sample during regular oscillations. It was shown that the voltage oscillations can be described well by an empirical expression V (t) sin(wt + φ) . We found that the phase angle φgenerally takes different values for the repetitive oscillations. Fast Fourier Transform analysis of the V - t oscillations showed that the oscillation period is comparable to that (PI) of the BSW current. This finding suggests a physical mechanism associated with charge density waves (CDWs), and, indeed, the weakly pinned flux line system in YBCO/Ag resembles the general behavior of CDWs. At certain values of PI, amplitude of BSW current, H and T, the YBCO/Ag sample behaves like a double-integrator, since it converts the BSW current to sinusoidal voltage oscillations in time.

Testing of a 1.25-m HTS Cable Made from YBCO Tapes

NASA Astrophysics Data System (ADS)

Gouge, M. J.; Lue, J. W.; Demko, J. A.; Duckworth, R. C.; Fisher, P. W.; Daumling, M.; Lindsay, D. T.; Roden, M. L.; Tolbert, J. C.

2004-06-01

Ultera and Oak Ridge National Laboratory (ORNL) have jointly designed, built, and tested a 1.25-m-long, prototype high-temperature superconducting (HTS) power cable made from 1-cm-wide, second-generation YBa2Cu3Ox (YBCO)-coated conductor tapes. Electrical tests of this cable were performed in boiling liquid nitrogen at 77 K. DC testing of the 1.25-m cable included determination of the V-I curve, with a critical current of 4200 A. This was consistent with the properties of the 24 individual YBCO tapes. AC testing of the cable was conducted at currents up to 2500 Arms. The ac losses were measured calorimetrically by measuring the response of a calibrated temperature sensor placed on the former and electrically by use of a Rogowski coil with a lock-in amplifier. AC losses of about 2 W/m were measured at a cable ac current of 2000 Arms. Overcurrent testing was conducted at peak current values up to 12 kA for pulse lengths of 0.1-0.2 s. The cable temperature increased to 105 K for a 12 kA, 0.2 s overcurrent pulse, and the cable showed no degradation after the sequence of overcurrent testing. This commercial-grade HTS cable demonstrated the feasibility of second-generation YBCO tapes in an ac cable application.

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

DOE PAGES

Cui, Shumao; Pu, Haihui; Wells, Spencer A.; ...

2015-10-21

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ~10 15 cm -2 for the 4.8-nm-thick PNSmore » when exposed to 20 p.p.b. NO 2 at 300 K. As a result, our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm).« less

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

NASA Astrophysics Data System (ADS)

Cui, Shumao; Pu, Haihui; Wells, Spencer A.; Wen, Zhenhai; Mao, Shun; Chang, Jingbo; Hersam, Mark C.; Chen, Junhong

2015-10-01

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ~1015 cm-2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO2 at 300 K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm).

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

PubMed Central

Cui, Shumao; Pu, Haihui; Wells, Spencer A.; Wen, Zhenhai; Mao, Shun; Chang, Jingbo; Hersam, Mark C.; Chen, Junhong

2015-01-01

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ∼1015 cm−2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO2 at 300 K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm). PMID:26486604

Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

NASA Astrophysics Data System (ADS)

Winkowski, P.; Marszałek, Konstanty W.

2013-07-01

Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

Colloidal CuInSe2 nanocrystals thin films of low surface roughness

NASA Astrophysics Data System (ADS)

de Kergommeaux, Antoine; Fiore, Angela; Faure-Vincent, Jérôme; Pron, Adam; Reiss, Peter

2013-03-01

Thin-film processing of colloidal semiconductor nanocrystals (NCs) is a prerequisite for their use in (opto-)electronic devices. The commonly used spin-coating is highly materials consuming as the overwhelming amount of deposited matter is ejected from the substrate during the spinning process. Also, the well-known dip-coating and drop-casting procedures present disadvantages in terms of the surface roughness and control of the film thickness. We show that the doctor blade technique is an efficient method for preparing nanocrystal films of controlled thickness and low surface roughness. In particular, by optimizing the deposition conditions, smooth and pinhole-free films of 11 nm CuInSe2 NCs have been obtained exhibiting a surface roughness of 13 nm root mean square (rms) for a 350 nm thick film, and less than 4 nm rms for a 75 nm thick film. Invited talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es; Aitor Postigo, Pablo

2014-06-02

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained withmore » a top-down lithography method.« less

Domain wall structure and interactions in 50 nm wide Cobalt nanowires

NASA Astrophysics Data System (ADS)

Tu, Kun-Hua; Ojha, Shuchi; Ross, Caroline A.

2018-05-01

Arrays of cobalt nanowires with widths of 50 nm, thickness of 5 and 20 nm and periodicity of 70 nm were fabricated by pattern transfer from a self-assembled block copolymer film. Transverse domain walls (DWs) were imaged by magnetic force microscopy, indicating repulsive interactions between DWs of the same sign in the 20 nm thick wires. Micromagnetic simulations were used to identify the interactions in the six distinct cases of a pair of transverse DWs in adjacent wires, considering all the possible combinations of head-to-head and tail-to-tail DWs and the orientation of the core magnetization. The boundary between repulsive and attractive DW interactions is mapped out for wires as a function of thickness, width and interwire spacing.

Effect of Thickness on the Structural, Microstructural, Electrical and Magnetic Properties of ni Films Elaborated by Pulsed Electrodeposition on si Substrate

NASA Astrophysics Data System (ADS)

Kacel, T.; Guittoum, A.; Hemmous, M.; Dirican, E.; Öksüzoglu, R. M.; Azizi, A.; Laggoun, A.; Zergoug, M.

We have studied the effect of thickness on the structural, microstructural, electrical and magnetic properties of Ni films electrodeposited onto n-Si (100) substrates. A series of Ni films have been prepared for different potentials ranging from -1.6V to -2.6V. Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), four point probe technique, atomic force microscopy (AFM) and vibrating sample magnetometry (VSM) have been used to investigate the physical properties of elaborated Ni thin films. From the analysis of RBS spectra, we have extracted the films thickness t (t ranges from 83nm to 422nm). We found that the Ni thickness, t (nm), linearly increases with the applied potential. The Ni thin films are polycrystalline and grow with the 〈111〉 texture. The lattice parameter a (Å) monotonously decreases with increasing thickness. However, a positive strain was noted indicating that all the samples are subjected to a tensile stress. The mean grain sizes D (nm) and the strain ɛhkl decrease with increasing thickness. The electrical resistivity ρ (μΩ.cm) increases with t for t less than 328nm. The diffusion at the grain boundaries may be the important factor in the electrical resistivity. From AFM images, we have shown that the Ni surface roughness decreases with increasing thickness. The coercive field HC, the squareness factor S, the saturation field HS and the effective anisotropy constant K1eff are investigated as a function of Ni thickness and grain sizes. The correlation between the magnetic and the structural properties is discussed.

Study of first electronic transition and hydrogen bonding state of ultra-thin water layer of nanometer thickness on an α-alumina surface by far-ultraviolet spectroscopy

NASA Astrophysics Data System (ADS)

Goto, Takeyoshi; Kinugasa, Tomoya

2018-05-01

The first electronic transition (A˜ ← X˜) and the hydrogen bonding state of an ultra-thin water layer of nanometer thickness between two α-alumina surfaces (0.5-20 nm) were studied using far-ultraviolet (FUV) spectroscopy in the wavelength range 140-180 nm. The ultra-thin water layer of nanometer thickness was prepared by squeezing a water droplet ( 1 μL) between a highly polished α-alumina prism and an α-alumina plate using a high pressure clamp ( 4.7 MPa), and the FUV spectra of the water layer at different thicknesses were measured using the attenuated total reflection method. As the water layer became thinner, the A˜ ← X˜ bands were gradually shifted to higher or lower energy relative to that of bulk water; at thicknesses smaller than 4 nm, these shifts were substantial (0.1-0.2 eV) in either case. The FUV spectra of the water layer with thickness < 4 nm indicate the formation of structured ice-like hydrogen bond (H-bond) layers for the higher energy shifts or the formation of slightly weaker H-bond layers as compared to those in the bulk liquid state for lower energy shifts. In either case, the H-bond structure of bulk liquid water is nearly lost at thicknesses below 4 nm, because of steric hydration forces between the α-alumina surfaces.

Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

PubMed

Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

2018-04-01

Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

NASA Astrophysics Data System (ADS)

Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

2017-07-01

The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.

PubMed

Yuan, Zhongcheng; Yang, Yingguo; Wu, Zhongwei; Bai, Sai; Xu, Weidong; Song, Tao; Gao, Xingyu; Gao, Feng; Sun, Baoquan

2016-12-21

Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within ∼300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to ∼800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.

Properties of thin silver films with different thickness

NASA Astrophysics Data System (ADS)

Zhao, Pei; Su, Weitao; Wang, Reng; Xu, Xiaofeng; Zhang, Fengshan

2009-01-01

In order to investigate optical properties of silver films with different film thickness, multilayer composed of thin silver film sandwiched between ZnS films are sputtered on the float glass. The crystal structures, optical and electrical properties of films are characterized by various techniques, such as X-ray diffraction (XRD), spectrum analysis, etc. The optical constants of thin silver film are calculated by fitting the transmittance ( T) and reflectance ( R) spectrum of the multilayer. Electrical and optical properties of silver films thinner than 6.2 nm exhibit sharp change. However, variation becomes slow as film thickness is larger than 6.2 nm. The experimental results indicate that 6.2 nm is the optimum thickness for properties of silver.

Brillouin Light Scattering study of Fe/Pd multilayers

NASA Astrophysics Data System (ADS)

From, Milton; Cheng, Li; Altounian, Zaven

2002-03-01

We have performed a series of Brillouin light scattering (BLS) measurements on sputtered multilayers in order to test a recent calculation[1] that predicts that the majority of spin-wave modes present in a magnetic multilayer will not be seen by BLS due to destructive interference between light scattered by different layers in the structure. We have measured the BLS spectra of a series of Si(100) + Pdx + [Fe/Pdx] x 25 sputtered multilayers. The thickness of the Fe layers was 1.5 nm and the Pd thicknesses examined were x = 0.5nm, 1.0nm, 1.5nm, 2.5nm, and 4.0nm. The BLS instrument used was a 4-pass Fabry-Perot interferometer operated in the back-scattering geometry with 514.5 nm laser light. We obtain good 2-parameter fits of the model calculation to the data for all values of Pd thickness and for applied magnetic fields in the range 0 < H < 0.7 T. [1]J.F. Cochran, Phys Rev B, vol. 64, 134406 (2001)

Evaluation of electrical properties of Cr/CrN nano-multilayers for electronic applications.

PubMed

Marulanda, D M; Olaya, J J; Patiño, E J

2011-06-01

The electrical properties of Cr/CrN nano-multilayers produced by Unbalanced Magnetron Sputtering have been studied as a function of bilayer period and total thickness. Two groups of multilayers were produced: in the first group the bilayer period varied between 20 nm, 100 nm and 200 nm with total thickness of 1 microm, and in the second group the bilayer period varied between 25 nm, 50 nm and 100 nm and a total thickness of 100 nm. X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were used in order to investigate the microstructure characteristics of the multilayers, and the Four Point Probe (FPP) method was used to evaluate in-plane and transverse electrical resistivity. XRD results show (111) and (200) orientations for all the CrN coatings and the presence of a multilayer structure was confirmed through SEM studies. Transverse electrical resistivity results show that this property is strongly dependent on the bilayer period.

Direct synthesis and characterization of optically transparent conformal zinc oxide nanocrystalline thin films by rapid thermal plasma CVD

NASA Astrophysics Data System (ADS)

Pedersen, Joachim D.; Esposito, Heather J.; Teh, Kwok Siong

2011-10-01

We report a rapid, self-catalyzed, solid precursor-based thermal plasma chemical vapor deposition process for depositing a conformal, nonporous, and optically transparent nanocrystalline ZnO thin film at 130 Torr (0.17 atm). Pure solid zinc is inductively heated and melted, followed by ionization by thermal induction argon/oxygen plasma to produce conformal, nonporous nanocrystalline ZnO films at a growth rate of up to 50 nm/min on amorphous and crystalline substrates including Si (100), fused quartz, glass, muscovite, c- and a-plane sapphire (Al2O3), gold, titanium, and polyimide. X-ray diffraction indicates the grains of as-deposited ZnO to be highly textured, with the fastest growth occurring along the c-axis. The individual grains are observed to be faceted by (103) planes which are the slowest growth planes. ZnO nanocrystalline films of nominal thicknesses of 200 nm are deposited at substrate temperatures of 330°C and 160°C on metal/ceramic substrates and polymer substrates, respectively. In addition, 20-nm- and 200-nm-thick films are also deposited on quartz substrates for optical characterization. At optical spectra above 375 nm, the measured optical transmittance of a 200-nm-thick ZnO film is greater than 80%, while that of a 20-nm-thick film is close to 100%. For a 200-nm-thick ZnO film with an average grain size of 100 nm, a four-point probe measurement shows electrical conductivity of up to 910 S/m. Annealing of 200-nm-thick ZnO films in 300 sccm pure argon at temperatures ranging from 750°C to 950°C (at homologous temperatures between 0.46 and 0.54) alters the textures and morphologies of the thin film. Based on scanning electron microscope images, higher annealing temperatures appear to restructure the ZnO nanocrystalline films to form nanorods of ZnO due to a combination of grain boundary diffusion and bulk diffusion. PACS: films and coatings, 81.15.-z; nanocrystalline materials, 81.07.Bc; II-VI semiconductors, 81.05.Dz.

[Preliminary analysis about influence of porcelain thickness on interfacial crack of PFM].

PubMed

Zhu, Ziyuan; Zhang, Baowei; Zhang, Xiuyin; Xu, Kan; Fang, Ruhua; Wang, Dongmei

2002-01-01

This study was about the influence of porcelain thickness on crack at interface. The effect of porcelain thickness on the flaw at the interface between porcelain and metal was studied in three groups with porcelain thickness of 0.5 mm, 1.5 mm and 2.5 mm (metal thickness of 0.5 mm) by means of moire interferometre and interfacial fracture mechanics. The parameter Jc was compared among the three groups and the growing of the flaw was observed. Jc and the extreme strength of group with porcelain thickness of 0.5 mm (2.813 N/m and 9.979 N) were lower than those of the groups with porcelain thickness of 1.5 mm and 2.5 mm (5.395 N/m, 19.134 N and 5.429 N/m, 19.256 N). Flaws extend along the interface in the groups with porcelain thickness of 1.5 mm and 0.5 mm. (1) Fracture resistance of the interface in the groups with porcelain thickness of 1.5 mm and 2.5 mm is similar and it decreases in the group with 0.5 mm thick porcelain. (2) When porcelain is 1.5 mm or 0.5 mm thick, flaws will extend along the interface. When porcelain is 2.5 mm thick, flaws will extend into the porcelain layer.

Fast infrared response of YBCO thin films

NASA Technical Reports Server (NTRS)

Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

1990-01-01

The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

Performance prediction of high Tc superconducting small antennas using a two-fluid-moment method model

NASA Astrophysics Data System (ADS)

Cook, G. G.; Khamas, S. K.; Kingsley, S. P.; Woods, R. C.

1992-01-01

The radar cross section and Q factors of electrically small dipole and loop antennas made with a YBCO high Tc superconductor are predicted using a two-fluid-moment method model, in order to determine the effects of finite conductivity on the performances of such antennas. The results compare the useful operating bandwidths of YBCO antennas exhibiting varying degrees of impurity with their copper counterparts at 77 K, showing a linear relationship between bandwidth and impurity level.

Effect of the microscopic correlated-pinning landscape on the macroscopic critical current density in YBCO films

NASA Astrophysics Data System (ADS)

Ghigo, G.; Chiodoni, A.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Minetti, B.; Camerlingo, C.

This paper deals with the mechanisms controlling the critical current density vs. field behavior in YBCO films. We base our analysis on a suitable model concerning the existence of a network of intergrain Josephson junctions whose length is modulated by defects. Irradiation with 0.25 GeV Au ions provide a useful tool to check the texture of the sample, in particular to give a gauge length reference to separate “weak” links and high- J c links.

Protecting Superconducting HTS-Antennas by Meta-Material Cloaks

DTIC Science & Technology

2014-04-30

radiation efficiency for this antenna is 22.3\\%. However, if the normal conducting part is replaced with a superconductor , e.g. YBCO with RS=500µΩ, [8] the...loss resistance can be brought down due to the much lower surface resistance of the superconductor relative to the normal conductor. Chalupka et al...range [12]. In 1987, Wu et al. [13] discovered the HTS compound YBCO that has a TC of ≈ 92K, which was the first superconductor to have a TC greater

The anisotropic effective damping of thickness-dependent epitaxial Co2FeAl films studied by spin rectification

NASA Astrophysics Data System (ADS)

Chen, Zhendong; Kong, Wenwen; Mi, Kui; Chen, Guilin; Zhang, Peng; Fan, Xiaolong; Gao, Cunxu; Xue, Desheng

2018-03-01

Epitaxial Co2FeAl films with the thickness varying from 26.4 nm to 4.6 nm were grown on MgO(001) substrates by molecular beam epitaxy. Spin rectification was adopted to study the dynamic magnetic properties of the Co2FeAl films, considering the reported advantages of this technique with high thickness-independent sensitivity on samples. At a fixed microwave frequency, the in-plane angular dependent resonance fields and their linewidths exhibit a superposition of a uniaxial and a fourfold anisotropy for all samples. The results reveal an anisotropic damping behavior of the films. Along in-plane different azimuths of the films, frequency-dependent resonance-field linewidths were investigated. The anisotropic effective damping of the films with the thickness varying from 26.4 nm to 4.6 nm was then analyzed, which is contributed from the two-magnon scattering.

Application of scanning angle Raman spectroscopy for determining the location of buried polymer interfaces with tens of nanometer precision

DOE PAGES

Damin, Craig A.; Nguyen, Vy H. T.; Niyibizi, Auguste S.; ...

2015-02-11

In this study, near-infrared scanning angle (SA) Raman spectroscopy was utilized to determine the interface location in bilayer films (a stack of two polymer layers) of polystyrene (PS) and polycarbonate (PC). Finite-difference-time-domain (FDTD) calculations of the sum square electric field (SSEF) for films with total bilayer thicknesses of 1200–3600 nm were used to construct models for simultaneously measuring the film thickness and the location of the buried interface between the PS and PC layers. Samples with total thicknesses of 1320, 1890, 2300, and 2750 nm and varying PS/PC interface locations were analyzed using SA Raman spectroscopy. Comparing SA Raman spectroscopymore » and optical profilometry measurements, the average percent difference in the total bilayer thickness was 2.0% for films less than ~2300 nm thick. The average percent difference in the thickness of the PS layer, which reflects the interface location, was 2.5% when the PS layer was less than ~1800 nm. SA Raman spectroscopy has been shown to be a viable, non-destructive method capable of determining the total bilayer thickness and buried interface location for bilayer samples consisting of thin polymer films with comparable indices of refraction.« less

Influence of electron transport layer thickness on optical properties of organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Guohong; Liu, Yong; Li, Baojun

2015-06-07

We investigate experimentally and theoretically the influence of electron transport layer (ETL) thickness on properties of typical N,N′-diphenyl-N,N′-bis(1-naphthyl)-[1,1′-biphthyl]-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) heterojunction based organic light-emitting diodes (OLEDs), where the thickness of ETL is varied to adjust the distance between the emitting zone and the metal electrode. The devices showed a maximum current efficiency of 3.8 cd/A when the ETL thickness is around 50 nm corresponding to an emitter-cathode distance of 80 nm, and a second maximum current efficiency of 2.6 cd/A when the ETL thickness is around 210 nm corresponding to an emitter-cathode distance of 240 nm. We adopt a rigorous electromagnetic approach that takesmore » parameters, such as dipole orientation, polarization, light emitting angle, exciton recombination zone, and diffusion length into account to model the optical properties of devices as a function of varying ETL thickness. Our simulation results are accurately consistent with the experimental results with a widely varying thickness of ETL, indicating that the theoretical model may be helpful to design high efficiency OLEDs.« less

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

PubMed

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momblona, C.; Malinkiewicz, O.; Soriano, A.

2014-08-01

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging frommore » 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.« less

Metal/Dielectric Multilayers for High Resolution Imaging

DTIC Science & Technology

2012-08-07

of a silicon waveguide coated by thin metal film. The proposed PWG structure consists of narrow silicon waveguide clad by gold film without top...where the waveguide thickness is 220nm and the lower oxide cladding is 2μm. The device consists of main waveguide (of waveguide width WSOI=450nm...evaporation, where 3nm thick titanium was used as adhesion layer before 40nm gold deposition took place. Finally, the samples were spun coated with

Controlling the optical parameters of self-assembled silver films with wetting layers and annealing

NASA Astrophysics Data System (ADS)

Ciesielski, Arkadiusz; Skowronski, Lukasz; Trzcinski, Marek; Szoplik, Tomasz

2017-11-01

We investigated the influence of presence of Ni and Ge wetting layers as well as annealing on the permittivity of Ag films with thicknesses of 20, 35 and 65 nm. Most of the research on thin silver films deals with very small (<20 nm) or relatively large (≥50 nm) thicknesses. We studied the transition region (around 30 nm) from charge percolation pathways to fully continuous films and compared the values of optical parameters among silver layers with at least one fixed attribute (thickness, wetting and capping material, post-process annealing). Our study, based on atomic force microscopy, ellipsometric and X-ray photoelectron spectroscopy measurements, shows that utilizing a wetting layer is comparable to increasing the thickness of the silver film. Both operations decrease the roughness-to-thickness ratio, thus decreasing the scattering losses and both narrow the Lorentz-shaped interband transition peak. However, while increasing silver thickness increases absorption on the free carriers, the use of wetting layers influences the self-assembled internal structure of silver films in such a way, that the free carrier absorption decreases. Wetting layers also introduce additional contributions from effects like segregation or diffusion, which evolve in time and due to annealing.

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

NASA Astrophysics Data System (ADS)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Multi-band filter design with less total film thickness for short-wave infrared

NASA Astrophysics Data System (ADS)

Yan, Yung-Jhe; Chien, I.-Pen; Chen, Po-Han; Chen, Sheng-Hui; Tsai, Yi-Chun; Ou-Yang, Mang

2017-08-01

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition process and black matrix coating, the optical device processes were completed.

SnO2 epitaxial films with varying thickness on c-sapphire: Structure evolution and optical band gap modulation

NASA Astrophysics Data System (ADS)

Zhang, Mi; Xu, Maji; Li, Mingkai; Zhang, Qingfeng; Lu, Yinmei; Chen, Jingwen; Li, Ming; Dai, Jiangnan; Chen, Changqing; He, Yunbin

2017-11-01

A series of a-plane SnO2 films with thickness between 2.5 nm and 1436 nm were grown epitaxially on c-sapphire by pulsed laser deposition (PLD), to allow a detailed probe into the structure evolution and optical band gap modulation of SnO2 with growing thickness. All films exhibit excellent out-of-plane ordering (lowest (200) rocking-curve half width ∼0.01°) with an orientation of SnO2(100) || Al2O3(0001), while three equivalent domains that are rotated by 120° with one another coexist in-plane with SnO2[010] || Al2O3 [11-20]. Initially the SnO2(100) film assumes a two-dimensional (2D) layer-by-layer growth mode with atomically smooth surface (minimum root-mean-square roughness of 0.183 nm), and endures compressive strain along both c and a axes as well as mild tensile strain along the b-axis. With increasing thickness, transition from the 2D to 3D island growth mode takes place, leading to formation of various defects to allow relief of the stress and thus relaxation of the film towards bulk SnO2. More interestingly, with increasing thickness from nm to μm, the SnO2 films present a non-monotonic V-shaped variation in the optical band gap energy. While the band gap of SnO2 films thinner than 6.1 nm increases rapidly with decreasing film thickness due to the quantum size effect, the band gap of thicker SnO2 films broadens almost linearly with increasing film thickness up to 374 nm, as a result of the strain effect. The present work sheds light on future design of SnO2 films with desired band gap for particular applications by thickness control and strain engineering.

Large-scale freestanding nanometer-thick graphite pellicles for mass production of nanodevices beyond 10 nm.

PubMed

Kim, Seul-Gi; Shin, Dong-Wook; Kim, Taesung; Kim, Sooyoung; Lee, Jung Hun; Lee, Chang Gu; Yang, Cheol-Woong; Lee, Sungjoo; Cho, Sang Jin; Jeon, Hwan Chul; Kim, Mun Ja; Kim, Byung-Gook; Yoo, Ji-Beom

2015-09-21

Extreme ultraviolet lithography (EUVL) has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10 nm. We present a new pellicle material, nanometer-thick graphite film (NGF), which shows an extreme ultraviolet (EUV) transmission of 92% at a thickness of 18 nm. The maximum temperature induced by laser irradiation (λ = 800 nm) of 9.9 W cm(-2) was 267 °C, due to the high thermal conductivity of the NGF. The freestanding NGF was found to be chemically stable during annealing at 500 °C in a hydrogen environment. A 50 × 50 mm large area freestanding NGF was fabricated using the wet and dry transfer (WaDT) method. The NGF can be used as an EUVL pellicle for the mass production of nanodevices beyond 10 nm.

Maximum permissible voltage of YBCO coated conductors

NASA Astrophysics Data System (ADS)

Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z.; Hong, Z.; Wang, D.; Zhou, H.; Shen, X.; Shen, C.

2014-06-01

Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (Ic) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the Ic degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

Static Test for a Gravitational Force Coupled to Type 2 YBCO Superconductors

NASA Technical Reports Server (NTRS)

Li, Ning; Noever, David; Robertson, Tony; Koczor, Ron; Brantley, Whitt

1997-01-01

As a Bose condensate, superconductors provide novel conditions for revisiting previously proposed couplings between electromagnetism and gravity. Strong variations in Cooper pair density, large conductivity and low magnetic permeability define superconductive and degenerate condensates without the traditional density limits imposed by the Fermi energy (approx. 10(exp -6) g cc. Recent experiments have reported anomalous weight loss for a test mass suspended above a rotating type II, YBCO superconductor, with the percentage change (0.05 - 2.1 %) independent of the test mass' chemical composition and diamagnetic properties. A variation of 5 parts per 10' was reported above a stationary (non-rotating) superconductor. In experiments using a sensitive gravimeter, bulk YBCO superconductors were stably levitated in a DC magnetic field. Changes in acceleration were measured to be less than 2 parts in 108 of the normal gravitational acceleration. This result puts new limits on the strength and range of the proposed coupling between static superconductors and gravity.

Effects of K and Ca doping on twin boundary energy of cupperate superconductors

NASA Astrophysics Data System (ADS)

Khoshnevisan, Bahram; Mohammadi, Mahnaz

2016-04-01

Ab-initio calculations under GGA approximation have been employed to find out the effect Ba substitution by K and Ca on the structural and electronic properties twined and untwined YBCO system. In this regard, the twin boundary energy, γ, and impact of the substitution on the boundary's charge distribution have been of special consideration. Our results show that despite the structural changes the presence of K (Ca) modifies substantially density of levels at the Fermi level, which could be responsible for empirical reports of decreasing the critical temperature (Tc) by increasing the K(Ca) content. Although, the K doping reduces the γ value in YBa2-xKxCu3O7 system, after calcium doping it remains more or less unchanged. In addition, reduction of the carrier density occurs at twin boundary in CuO2 layer for the substituted system with respect to the untwined YBCO system. Our results would be noticeable in conjunction with the experimentally reported twinned and alkali substituted superconductive properties of the YBCO samples.

Preparation of ultra-thin and high-quality WO{sub 3} compact layers and comparision of WO{sub 3} and TiO{sub 2} compact layer thickness in planar perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jincheng; Shi, Chengwu, E-mail: shicw506@foxmail.com; Chen, Junjun

2016-06-15

In this paper, the ultra-thin and high-quality WO{sub 3} compact layers were successfully prepared by spin-coating-pyrolysis method using the tungsten isopropoxide solution in isopropanol. The influence of WO{sub 3} and TiO{sub 2} compact layer thickness on the photovoltaic performance of planar perovskite solar cells was systematically compared, and the interface charge transfer and recombination in planar perovskite solar cells with TiO{sub 2} compact layer was analyzed by electrochemical impedance spectroscopy. The results revealed that the optimum thickness of WO{sub 3} and TiO{sub 2} compact layer was 15 nm and 60 nm. The planar perovskite solar cell with 15 nm WO{submore » 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. - Graphical abstract: The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. Display Omitted - Highlights: • Preparation of ultra-thin and high-quality WO{sub 3} compact layers. • Perovskite solar cell with 15 nm-thick WO{sub 3} compact layer achieved PCE of 10.14%. • Perovskite solar cell with 60 nm-thick TiO{sub 2} compact layer achieved PCE of 12.64%.« less

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

NASA Astrophysics Data System (ADS)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Surface plasmon resonance in electrodynamically coupled Au NPs monolayer/dielectric spacer/Al film nanostructure: tuning by variation of spacer thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Liakhov, Yuriy F.; Tomchuk, Anastasiya V.; Haftel, Michael; Pinchuk, Anatoliy O.

2017-10-01

Effects of plasmonic coupling between metal nanoparticles and thin metal films separated by thin dielectric film-spacers have been studied by means of light extinction in three-layer planar Au NPs monolayer/dielectric (shellac) film/Al film nanostructure. The influence of coupling on the spectral characteristics of the Au NPs SPR extinction peak has been analyzed with spacer thickness, varied from 3 to 200 nm. The main observed features are a strong red shift (160 nm), and non-monotonical behavior of the magnitude and width of Au NPs SPR, as the spacer thickness decreased. The appearance of an intensive gap mode peak was observed at a spacer thickness smaller than approximately 30 nm, caused by the hybridization of the Au NPs SPR mode and gap mode in the presence of the Al film. Additionally, the appreciable enhancement (5.6 times) of light extinction by the Au NPs monolayer in the presence of Al film has been observed. A certain value of dielectric spacer thickness (70 nm) exists at which such enhancement is maximal.

Property and microstructural nonuniformity in the yttrium-barium-copper-oxide superconductor determined from electrical, magnetic, and ultrasonic measurements. Ph.D. Thesis - Case Western Reserve Univ.

NASA Technical Reports Server (NTRS)

Roth, Don J.

1991-01-01

The purpose of this dissertation was the following: (1) to characterize the effect of pore fraction on a comprehensive set of electrical and magnetic properties for the yttrium-barium-copper-oxide (YBCO) high temperature ceramic superconductor; and (2) to determine the viability of using a room-temperature, nondestructive characterization method to aid in the prediction of superconducting (cryogenic) properties. The latter involved correlating ultrasonic velocity measurements at room temperature with property-affecting pore fraction and oxygen content variations. The use of ultrasonic velocity for estimating pore fraction in YBCO is presented, and other polycrystalline materials are reviewed, modeled, and statistically analyzed. This provides the basis for using ultrasonic velocity to interrogate microstructure. The effect of pore fraction (0.10-0.25) on superconductor properties of YBCO samples was characterized. Spatial (within-sample) variations in microstructure and superconductor properties were investigated, and the effect of oxygen content on elastic behavior was examined. Experimental methods used included a.c. susceptibility, electrical, and ultrasonic velocity measurements. Superconductor properties measured included transition temperature, magnetic transition width, transport and magnetic critical current density, magnetic shielding, a.c. loss, and sharpness of the voltage-current characteristics. An ultrasonic velocity image constructed from measurements at 1mm increments across a YBCO sample revealed microstructural variations that correlated with variations in magnetic shielding and a.c. loss behavior. Destructive examination using quantitative image analysis revealed pore fraction to be the varying microstructural feature.

Electron holography study of magnetization behavior in the writer pole of a perpendicular magnetic recording head by a 1 MV transmission electron microscope.

PubMed

Hirata, Kei; Ishida, Yoichi; Akashi, Tetsuya; Shindo, Daisuke; Tonomura, Akira

2012-01-01

The magnetic domain structure of the writer poles of perpendicular magnetic recording heads was studied using electron holography. Although the domain structure of a 100-nm-thick writer pole could be observed with a 300 kV transmission electron microscope, that of the 250-nm-thick writer pole could not be analyzed due to the limited transmission capability of the instrument. On the other hand, the detailed domain structure of the 250-nm-thick writer pole was successfully analyzed by a 1 MV electron microscope using its high transmission capability. The thickness and material dependency of the domain structure of a writer pole were discussed.

Large-area few-layer hexagonal boron nitride prepared by quadrupole field aided exfoliation

NASA Astrophysics Data System (ADS)

Lun Lu, Han; Zhi Rong, Min; Qiu Zhang, Ming

2018-03-01

A quadrupole electric field-mediated exfoliation method is proposed to convert micron-sized hexagonal boron nitride (h-BN) powder into few-layer hexagonal boron nitride nanosheets (h-BNNS). Under optimum conditions (400 Hz, 40 V, 32 μg ml-1, sodium deoxycholate, TAE medium), the h-BN powders (thickness >200 nm, horizontal scale ˜10 μm) are successfully exfoliated into 0.5-4 nm (1-10 layers) thick h-BNNS with the same horizontal scale. Dynamic laser scattering and atomic force microscope data show that the yield is 47.6% (for the portion with the thickness of 0.5-6 nm), and all of the vertical sizes are reduced to smaller than 18 nm (45 layers).

Nanoscale size effects on the mechanical properties of platinum thin films and cross-sectional grain morphology

NASA Astrophysics Data System (ADS)

Abbas, K.; Alaie, S.; Ghasemi Baboly, M.; Elahi, M. M. M.; Anjum, D. H.; Chaieb, S.; Leseman, Z. C.

2016-01-01

The mechanical behavior of polycrystalline Pt thin films is reported for thicknesses of 75 nm, 100 nm, 250 nm, and 400 nm. These thicknesses correspond to transitions between nanocrystalline grain morphology types as found in TEM studies. Thinner samples display a brittle behavior, but as thickness increases the grain morphology evolves, leading to a ductile behavior. During evolution of the morphology, dramatic differences in elastic moduli (105-160 GPa) and strengths (560-1700 MPa) are recorded and explained by the variable morphology. This work suggests that in addition to the in-plane grain size of thin films, the transitions in cross-sectional morphologies of the Pt films significantly affect their mechanical behavior.

Ultrafast lattice dynamics of single crystal and polycrystalline gold nanofilms☆

NASA Astrophysics Data System (ADS)

Hu, Jianbo; Karam, Tony E.; Blake, Geoffrey A.; Zewail, Ahmed H.

2017-09-01

Ultrafast electron diffraction is employed to spatiotemporally visualize the lattice dynamics of 11 nm-thick single-crystal and 2 nm-thick polycrystalline gold nanofilms. Surprisingly, the electron-phonon coupling rates derived from two temperature simulations of the data reveal a faster interaction between electrons and the lattice in the case of the single-crystal sample. We interpret this unexpected behavior as arising from quantum confinement of the electrons in the 2 nm-thick gold nanofilm, as supported by absorption spectra, an effect that counteracts the expected increase in the electron scattering off surfaces and grain boundaries in the polycrystalline materials.

Aspects of passive magnetic levitation based on high-T(sub c) superconducting YBCO thin films

NASA Technical Reports Server (NTRS)

Schoenhuber, P.; Moon, F. C.

1995-01-01

Passive magnetic levitation systems reported in the past were mostly confined to bulk superconducting materials. Here we present fundamental studies on magnetic levitation employing cylindrical permanent magnets floating above high-T(sub c) superconducting YBCO thin films (thickness about 0.3 mu m). Experiments included free floating rotating magnets as well as well-established flexible beam methods. By means of the latter, we investigated levitation and drag force hysteresis as well as magnetic stiffness properties of the superconductor-magnet arrangement. In the case of vertical motion of the magnet, characteristic high symmetry of repulsive (approaching) and attractive (withdrawing) branches of the pronounced force-displacement hysteresis could be detected. Achievable force levels were low as expected but sufficient for levitation of permanent magnets. With regard to magnetic stiffness, thin films proved to show stiffness-force ratios about one order of magnitude higher than bulk materials. Phenomenological models support the measurements. Regarding the magnetic hysteresis of the superconductor, the Irie-Yamafuji model was used for solving the equation of force balance in cylindrical coordinates allowing for a macroscopic description of the superconductor magnetization. This procedure provided good agreement with experimental levitation force and stiffness data during vertical motion. For the case of (lateral) drag force basic qualitative characteristics could be recovered, too. It is shown that models, based on simple asymmetric magnetization of the superconductor, describe well asymptotic transition of drag forces after the change of the magnet motion direction. Virgin curves (starting from equilibrium, i.e. symmetric magnetization) are approximated by a linear approach already reported in literature only. This paper shows that basic properties of superconducting thin films allow for their application to magnetic levitation or - without need of levitation forces, e.g. microgravity - magnetic damping devices.

Organic field effect transistors - Study of performance parameters for different dielectric layer thickness

NASA Astrophysics Data System (ADS)

Assis, Anu; Shahul Hameed T., A.; Predeep, P.

2017-06-01

Mobility and current handling capabilities of Organic Field Effect Transistor (OFET) are vitally important parameters in the electrical performance where the material parameters and thickness of different layers play significant role. In this paper, we report the simulation of an OFET using multi physics tool, where the active layer is pentacene and Poly Methyl Methacrylate (PMMA) forms the dielectric. Electrical characterizations of the OFET on varying the thickness of the dielectric layer from 600nm to 400nm are simulated and drain current, transconductance and mobility are analyzed. In the study it is found that even though capacitance increases with reduction in dielectric layer thickness, the transconductance effect is reflected many more times in the mobility which in turn could be attributed to the variations in transverse electric field. The layer thickness below 300nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Okur, Serdal; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2014-02-01

Carrier transport in double heterostructure (DH) InGaN light emitting diodes (LEDs) was investigated using photocurrent measurements performed under CW HeCd laser (325 nm wavelength) excitation. The effect of electron injector thicknesses was investigated by monitoring the excitation density and applied bias dependent escape of photogenerated carriers from the active region and through energy band structure and carrier transport simulations using Silvaco Atlas. For quad (4x) 3-nm DH LED structures incorporating staircase electron injectors (SEIs), photocurrent increased with SEI thickness due to reduced effective barrier opposing carrier escape from the active region as confirmed by simulations. The carrier leakage percentile at -3V bias and 280 Wcm-2 optical excitation density increased from 24 % to 55 % when In 0.04Ga0.96N + In0.08Ga0.92N SEI thickness was increased from 4 nm + 4 nm to 30 nm + 30 nm. The increased leakage with thicker SEI correlates with increased carrier overflow under forward bias.

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence

PubMed Central

Aslan, Kadir; Malyn, Stuart N.; Zhang, Yongxia; Geddes, Chris D.

2008-01-01

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little effect on close-proximity fluorescence when coated with a monolayer of fluorophore-labeled protein. However, the 15 nm continuous film cracks upon annealing, producing large nanoparticles which are ideal for enhancing the fluorescence of close-proximity fluorophores that are indeed difficult to prepare by other wet-chemical deposition processes. The annealing of 5 nm noncontinuous particulate films (a control sample) has little influence on metal-enhanced fluorescence, as expected. PMID:19479004

Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence.

PubMed

Aslan, Kadir; Malyn, Stuart N; Zhang, Yongxia; Geddes, Chris D

2008-04-15

We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little effect on close-proximity fluorescence when coated with a monolayer of fluorophore-labeled protein. However, the 15 nm continuous film cracks upon annealing, producing large nanoparticles which are ideal for enhancing the fluorescence of close-proximity fluorophores that are indeed difficult to prepare by other wet-chemical deposition processes. The annealing of 5 nm noncontinuous particulate films (a control sample) has little influence on metal-enhanced fluorescence, as expected.

A molecular dynamics study on thin film liquid boiling characteristics under rapid linear boundary heating: Effect of liquid film thickness

NASA Astrophysics Data System (ADS)

Rabbi, Kazi Fazle; Tamim, Saiful Islam; Faisal, A. H. M.; Mukut, K. M.; Hasan, Mohammad Nasim

2017-06-01

This study is a molecular dynamics investigation of phase change phenomena i.e. boiling of thin liquid films subjected to rapid linear heating at the boundary. The purpose of this study is to understand the phase change heat transfer phenomena at nano scale level. In the simulation, a thin film of liquid argon over a platinum surface has been considered. The simulation domain herein is a three-phase system consisting of liquid and vapor argon atoms placed over a platinum wall. Initially the whole system is brought to an equilibrium state at 90 K and then the temperature of the bottom wall is increased to a higher temperature (250K) within a finite time interval. Four different liquid argon film thicknesses have been considered (3 nm, 4 nm, 5 nm and 6 nm) in this study. The boundary heating rate (40×109 K/s) is kept constant in all these cases. Variation in system temperature, pressure, net evaporation number, spatial number density of the argon region with time for different film thickness have been demonstrated and analyzed. The present study indicates that the pattern of phase transition may be significantly different (i.e. evaporation or explosive boiling) depending on the liquid film thickness. Among the four cases considered in the present study, explosive boiling has been observed only for the liquid films of 5nm and 6nm thickness, while for the other cases, evaporation take place.

Recoil hysteresis of Sm -Co/Fe exchange-spring bilayers

NASA Astrophysics Data System (ADS)

Kang, K.; Lewis, L. H.; Jiang, J. S.; Bader, S. D.

2005-12-01

The exchange-spring behavior found in Sm-Co (20nm)/Fe epitaxial bilayer films was investigated by analyzing major hysteresis and recoil curves as a function of anneal conditions. The hard layer consists of nanocrystalline intermetallic Sm-Co hexagonal phases (majority phase Sm2Co7 with SmCo3 and SmCo5). Recoil curves, obtained from the successive removal to remanence and reapplication of an increasingly negative field from the major demagnetization curve, reveal the reversible and irreversible components of the magnetization. The Sm-Co thickness was fixed at 20nm while the Fe thicknesses of 10 and 20nm were studied, with ex situ annealing carried out in evacuated, sealed silica tubes at different temperatures. The peak in the recoil curve area is associated with the coercivity of the hard phase. The development of the soft component magnetization is revealed by the departure of the recoil area from zero with application of a reverse field. These two features together confirm that annealing stabilizes the 10nm Fe bilayer sample against local magnetic reversal while it weakens the 20nm bilayer sample. Furthermore, in both its as-deposited and annealed states the Sm -Co/Fe bilayer of 10nm Fe thickness always displays a higher exchange field and smaller recoil loop areas than the bilayer of 20nm Fe thickness, consistent with a stronger exchange response and more reversible magnetization in the former.

Electron-positron momentum distribution measurements of high-T superconductors and related systems

NASA Astrophysics Data System (ADS)

Wachs, A. L.; Turchi, P. E. A.; Howell, R. J.; Jean, Y. C.; Fluss, M. J.; West, R. N.; Kaiser, J. H.; Rayner, S.; Hahgighi, H.; Merkle, K. L.

1989-08-01

Measurements are discussed of the 2-D angular correlation of positron annihilation radiation (ACAR) in La2CuO4, YBa2Cu3O7 (YBCO), and NiO. The measurements for NiO are the first such 2-D ACAR measurements; the YBCO results are of a higher statistical quality than previously reported in the literature. The data are compared with complementary theoretical calculations and with each other. The implication is discussed of the analysis for ACAR studies of similar and related systems.

Electron-position momentum distribution measurements of high-T c superconductors and related systems

NASA Astrophysics Data System (ADS)

Wachs, A. L.; Turchi, P. E. A.; Howell, R. H.; Jean, Y. C.; Fluss, M. J.; West, R. N.; Kaiser, J. H.; Rayner, S.; Haghighi, H.; Merkle, K. L.; Revcolevschi, A.; Wang, Z. Z.

1989-12-01

We discuss our measurements of the 2D-angular correlation of positron annihilation radiation (ACAR) in La 2CuO 4, YBa 2Cu 3O 7 (YBCO), and NiO. The measurements for NiO are the first such 2D-ACAR measurements; the YBCO results are of a higher statistical quality than previously reported in the literature. The data are compared with complementary theoretical calculations and with each other. We discuss the implication of our analysis for ACAR studies of similar and related systems.

Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

NASA Astrophysics Data System (ADS)

Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

2014-01-01

Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

Strong Effect of Azodye Layer Thickness on RM-Stabilized Photoalignment

DTIC Science & Technology

2017-05-21

to thicker layers (~40 nm). Author Keywords photoalignment; azodye; reactive mesogen 1. Introduction Photoalignment of liquid crystals by azodye...Polymerizable azodyes[3] as well as passivation of the azodye film by spin-coating with a layer of reactive mesogen[4] are currently proposed solutions...thick alignment film rather than a ~40 nm thick alignment film ; cells with thin alignment layers are stable to exposure to polarized light for at

CNT-based saturable absorbers with scalable modulation depth for Thulium-doped fiber lasers operating at 1.9 μm

PubMed Central

Sobon, Grzegorz; Duzynska, Anna; Świniarski, Michał; Judek, Jarosław; Sotor, Jarosław; Zdrojek, Mariusz

2017-01-01

In this work, we demonstrate a comprehensive study on the nonlinear parameters of carbon nanotube (CNT) saturable absorbers (SA) as a function of the nanotube film thickness. We have fabricated a set of four saturable absorbers with different CNT thickness, ranging from 50 to 200 nm. The CNTs were fabricated via a vacuum filtration technique and deposited on fiber connector end facets. Each SA was characterized in terms of nonlinear transmittance (i.e. optical modulation depth) and tested in a Thulium-doped fiber laser. We show, that increasing the thickness of the CNT layer significantly increases the modulation depth (up to 17.3% with 200 nm thick layer), which strongly influences the central wavelength of the laser, but moderately affects the pulse duration. It means, that choosing the SA with defined CNT thickness might be an efficient method for wavelength-tuning of the laser, without degrading the pulse duration. In our setup, the best performance in terms of bandwidth and pulse duration (8.5 nm and 501 fs, respectively) were obtained with 100 nm thick CNT layer. This is also, to our knowledge, the first demonstration of a fully polarization-maintaining mode-locked Tm-doped laser based on CNT saturable absorber. PMID:28368014

Formation and decay of charge carriers in aggregate nanofibers consisting of poly(3-hexylthiophene)-coated gold nanoparticles.

PubMed

Lee, Dongki; Lee, Jaewon; Song, Ki-Hee; Rhee, Hanju; Jang, Du-Jeon

2016-01-21

Thin nanofibers (NFs) of J-dominant aggregates with a thickness of 15 nm and thick NFs of H-dominant aggregates with a thickness of 25 nm were fabricated by the self-assembly of poly(3-hexylthiophene)-coated gold nanoparticles. The formation and decay dynamics of the charge carriers, which are dependent on the aggregate types of NFs, was investigated by time-resolved emission and transient-absorption spectroscopy. With increasing excitation energy, the fraction of the fast emission decay component decreased, suggesting that the fast formation of polaron pairs (PP), localized (LP), and delocalized polarons (DP) results from higher singlet exciton states produced by the singlet fusion. The faster decay dynamics of DP and LP in the thick NFs than in thin NFs is due to the increased delocalization of DP and LP. As the interchain aggregation is weaker than intrachain aggregation, PP decays faster in thin NFs than in thick NFs. In both thin and thick NFs, although triplet (T1) excitons were barely observed with excitation at 532 nm on a nanosecond time scale, they were observed with excitation at 355 nm, showing that T1 excitons within NFs are generated mainly through the singlet fission from a higher singlet exciton state rather than through intersystem crossing.

Optical reflectance of solution processed quasi-superlattice ZnO and Al-doped ZnO (AZO) channel materials

NASA Astrophysics Data System (ADS)

Buckley, Darragh; McCormack, Robert; O'Dwyer, Colm

2017-04-01

The angle-resolved reflectance of high crystalline quality, c-axis oriented ZnO and AZO single and periodic quasi-superlattice (QSL) spin-coated TFT channels materials are presented. The data is analysed using an adapted model to accurately determine the spectral region for optical thickness and corresponding reflectance. The optical thickness agrees very well with measured thickness of 1-20 layered QSL thin films determined by transmission electron microscopy if the reflectance from lowest interference order is used. Directional reflectance for single layers or homogeneous QSLs of ZnO and AZO channel materials exhibit a consistent degree of anti-reflection characteristics from 30 to 60° (~10-12% reflection) for thickness ranging from ~40 nm to 500 nm. The reflectance of AZO single layer thin films is  <10% from 30 to 75° at 514.5 nm, and  <6% at 632.8 nm from 30-60°. The data show that ZnO and AZO with granular or periodic substructure behave optically as dispersive, continuous thin films of similar thickness, and angle-resolved spectral mapping provides a design rule for transparency or refractive index determination as a function of film thickness, substructure (dispersion) and viewing angle.

Nonlinear systems for frequency conversion from IR to RF

NASA Astrophysics Data System (ADS)

Dolasinski, Brian D.

The objective of this dissertation is to evaluate and develop novel sources for tunable narrowband IR generation, tunable narrowband THz generation, and ultra-wideband RF generation to be used in possible non-destructive evaluation systems. Initially a periodically poled Lithium Niobate (PPLN) based optical parametric amplifier (OPA) is designed using a double-pass configuration where a small part of the pump is used on the first pass to generate a signal, which is reflected and filtered by an off-axis etalon. The portion of the pump that is not phase matched on the first pass is retro-reflected back into the PPLN crystal and is co-aligned with the narrow bandwidth filtered signal and amplified. We demonstrate that the system is tunable in the 1.4 microm -1.6 microm signal range with a linewidth of 5.4 GHz. Next the outputs of seeded, dual periodically poled lithium niobate (PPLN) optical parametric amplifiers (OPA) are combined in the nonlinear crystal 4-dimethylamino-N-methyl-4-stilbazolium-tosylate (DAST) to produce a widely tunable narrowband THz source via difference frequency generation (DFG). We have demonstrated that this novel configuration enables the system to be seamlessly tuned, without mode-hops, from 1.2 THz to 26.3 THz with a minimum bandwidth of 3.1 GHz. The bandwidth of the source was measured by using the THz transmission spectrum of water vapor lines over a 3-meter path length. By selecting of the DFG pump wavelength to be at 1380 nm and the signal wavelength to tune over a range from 1380 nm to 1570 nm, we produced several maxima in the output THz spectrum that was dependent on the phase matching ability of the DAST crystal and the efficiency of our pyro-electric detector. Due to the effects of dispersive phase matching, filter absorption of the THz waves, and two-photon absorption multiple band gaps in the overall spectrum occur and are discussed. Employing the dual generator scheme, we have obtained THz images at several locations in the spectrum using an infrared camera that runs at a rate of 35 frames per second. We have demonstrated the ability to image 2 THz to 26 THz both in static and in real time conditions. We will present images of carbon fibers illuminated at different THz frequencies. Lastly, microwave generation was demonstrated by ultrafast photo-excitation experiments to induce non-equilibrium quasi-particle relaxation. Using a laser with a pulse energy of 1 mJ and a pulse duration greater than 120 fs (808 nm wavelength) incident on a charged, superconducting YBa2Cu 2O7-delta (YBCO) thin film ring, the photo-response was measured with a series of microwave antennas. From the observed nanosecond response time of the transient pulse, we extracted the frequency spectrum in the GHz regime that was dependent on the incident beam diameter, pulse duration, power, and the physical structure of the YBCO thin film.

Interface layer to tailor the texture and surface morphology of Al-doped ZnO polycrystalline films on glass substrates

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Inaba, Katsuhiko; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

2017-06-01

A 10-nm-thick radio frequency magnetron-sputtered aluminum-doped zinc oxide (AZO) showing a texture with a preferential (0001) orientation on amorphous glass substrates was used as an interface layer for tailoring the orientation of 490-nm-thick polycrystalline AZO films subsequently deposited by direct current (DC) magnetron sputtering at a substrate temperature of 200 °C. Wide-angle X-ray diffraction pole figure analysis showed that the resulting 500-nm-thick AZO films showed a texture with a highly preferential c-axis orientation. This showed that DC-magnetron-sputtered AZO films grew along with the orientation matching that of the interface layer, whereas 500-nm-thick AZO films deposited on bare glass substrates by DC magnetron sputtering exhibited a mixed orientation of the c-plane and other planes. The surface morphology was also improved while retaining the lateral grain size by applying the interface layer as revealed by atomic force microscopy.

Thickness dependent optical and electrical properties of CdSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purohit, A., E-mail: anuradha.purohit34@gmail.com; Chander, S.; Nehra, S. P.

2016-05-06

The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows thatmore » the electrical resistivity is observed to be decreased with thickness.« less

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

NASA Astrophysics Data System (ADS)

Kim, Jun-Young; Ionescu, Adrian; Mansell, Rhodri; Farrer, Ian; Oehler, Fabrice; Kinane, Christy J.; Cooper, Joshaniel F. K.; Steinke, Nina-Juliane; Langridge, Sean; Stankiewicz, Romuald; Humphreys, Colin J.; Cowburn, Russell P.; Holmes, Stuart N.; Barnes, Crispin H. W.

2017-01-01

Structural and magnetic properties of 1-10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) X-ray diffraction peak showed a 1° full-width at half-maximum, indicating ≈20 nm grain sizes. A significant reduction in Fe atomic moment from its bulk value was observed for films thinner than 4 nm. Both GaN/Fe interface roughness and Fe film coercivity increased with Fe thickness, indicating a possible deterioration of Fe crystalline quality. Magnetic anisotropy was mainly uniaxial for all films while hexagonal anisotropies appeared for thicknesses higher than 3.7 nm.

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

NASA Astrophysics Data System (ADS)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

2006-10-01

Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

Large Area Few Layers Hexagonal Boron Nitride Prepared by Quadrupole Field Aided Exfoliation.

PubMed

Hanlun, Lu; Rong, Min Zhi; Zhang, Ming Qiu

2018-01-16

A quadrupole electric field mediated exfoliation method is proposed to convert micron sized hexagonal boron nitride (hBN) powders into few layers hexagonal boron nitride nano-sheets (h-BNNS). Under the optimum conditions (400 Hz, 40 V, 32μg/mL, sodium deoxycholate, TAE medium), the hBN powders (thickness > 200 nm, horizontal scale ~ 10 μm) are successfully exfoliated into 0.5-4 nm (1-10 layers) thick h-BNNS with the same horizontal scale. Dynamic laser scattering (DLS) and atomic force microscope (AFM) statistics show that the yield is 47.6 % (for the portion with the thickness of 0.5-6 nm), and all of the vertical sizes are reduced to smaller than 18 nm (45 layers). © 2018 IOP Publishing Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pratap, Surender; Sarkar, Niladri, E-mail: niladri@pilani.bits-pilani.ac.in

Self-Consistent Quantum Method using Schrodinger-Poisson equations have been used for determining the Channel electron density of Nano-Scale MOSFETs for 6nm and 9nm thick channels. The 6nm thick MOSFET show the peak of the electron density at the middle where as the 9nm thick MOSFET shows the accumulation of the electrons at the oxide/semiconductor interface. The electron density in the channel is obtained from the diagonal elements of the density matrix; [ρ]=[1/(1+exp(β(H − μ)))] A Tridiagonal Hamiltonian Matrix [H] is constructed for the oxide/channel/oxide 1D structure for the dual gate MOSFET. This structure is discretized and Finite-Difference method is used formore » constructing the matrix equation. The comparison of these results which are obtained by Quantum methods are done with Semi-Classical methods.« less

Thickness Dependent Nanostructural, Morphological, Optical and Impedometric Analyses of Zinc Oxide-Gold Hybrids: Nanoparticle to Thin Film

PubMed Central

Perumal, Veeradasan; Hashim, Uda; Gopinath, Subash C. B.; Haarindraprasad, R.; Liu, Wei-Wen; Poopalan, P.; Balakrishnan, S. R.; Thivina, V.; Ruslinda, A. R.

2015-01-01

The creation of an appropriate thin film is important for the development of novel sensing surfaces, which will ultimately enhance the properties and output of high-performance sensors. In this study, we have fabricated and characterized zinc oxide (ZnO) thin films on silicon substrates, which were hybridized with gold nanoparticles (AuNPs) to obtain ZnO-Aux (x = 10, 20, 30, 40 and 50 nm) hybrid structures with different thicknesses. Nanoscale imaging by field emission scanning electron microscopy revealed increasing film uniformity and coverage with the Au deposition thickness. Transmission electron microscopy analysis indicated that the AuNPs exhibit an increasing average diameter (5–10 nm). The face center cubic Au were found to co-exist with wurtzite ZnO nanostructure. Atomic force microscopy observations revealed that as the Au content increased, the overall crystallite size increased, which was supported by X-ray diffraction measurements. The structural characterizations indicated that the Au on the ZnO crystal lattice exists without any impurities in a preferred orientation (002). When the ZnO thickness increased from 10 to 40 nm, transmittance and an optical bandgap value decreased. Interestingly, with 50 nm thickness, the band gap value was increased, which might be due to the Burstein-Moss effect. Photoluminescence studies revealed that the overall structural defect (green emission) improved significantly as the Au deposition increased. The impedance measurements shows a decreasing value of impedance arc with increasing Au thicknesses (0 to 40 nm). In contrast, the 50 nm AuNP impedance arc shows an increased value compared to lower sputtering thicknesses, which indicated the presence of larger sized AuNPs that form a continuous film, and its ohmic characteristics changed to rectifying characteristics. This improved hybrid thin film (ZnO/Au) is suitable for a wide range of sensing applications. PMID:26694656

Thickness Dependent Nanostructural, Morphological, Optical and Impedometric Analyses of Zinc Oxide-Gold Hybrids: Nanoparticle to Thin Film.

PubMed

Perumal, Veeradasan; Hashim, Uda; Gopinath, Subash C B; Haarindraprasad, R; Liu, Wei-Wen; Poopalan, P; Balakrishnan, S R; Thivina, V; Ruslinda, A R

2015-01-01

The creation of an appropriate thin film is important for the development of novel sensing surfaces, which will ultimately enhance the properties and output of high-performance sensors. In this study, we have fabricated and characterized zinc oxide (ZnO) thin films on silicon substrates, which were hybridized with gold nanoparticles (AuNPs) to obtain ZnO-Aux (x = 10, 20, 30, 40 and 50 nm) hybrid structures with different thicknesses. Nanoscale imaging by field emission scanning electron microscopy revealed increasing film uniformity and coverage with the Au deposition thickness. Transmission electron microscopy analysis indicated that the AuNPs exhibit an increasing average diameter (5-10 nm). The face center cubic Au were found to co-exist with wurtzite ZnO nanostructure. Atomic force microscopy observations revealed that as the Au content increased, the overall crystallite size increased, which was supported by X-ray diffraction measurements. The structural characterizations indicated that the Au on the ZnO crystal lattice exists without any impurities in a preferred orientation (002). When the ZnO thickness increased from 10 to 40 nm, transmittance and an optical bandgap value decreased. Interestingly, with 50 nm thickness, the band gap value was increased, which might be due to the Burstein-Moss effect. Photoluminescence studies revealed that the overall structural defect (green emission) improved significantly as the Au deposition increased. The impedance measurements shows a decreasing value of impedance arc with increasing Au thicknesses (0 to 40 nm). In contrast, the 50 nm AuNP impedance arc shows an increased value compared to lower sputtering thicknesses, which indicated the presence of larger sized AuNPs that form a continuous film, and its ohmic characteristics changed to rectifying characteristics. This improved hybrid thin film (ZnO/Au) is suitable for a wide range of sensing applications.

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Lin'an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A andmore » 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.« less

Coatings for FEL optics: preparation and characterization of B4C and Pt

PubMed Central

Störmer, Michael; Siewert, Frank; Horstmann, Christian; Buchheim, Jana; Gwalt, Grzegorz

2018-01-01

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30–100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B4C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments. PMID:29271760

Coatings for FEL optics: preparation and characterization of B4C and Pt.

PubMed

Störmer, Michael; Siewert, Frank; Horstmann, Christian; Buchheim, Jana; Gwalt, Grzegorz

2018-01-01

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30-100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B 4 C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments.

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (˜550 cm2/V s)

NASA Astrophysics Data System (ADS)

Xu, Chang; Gao, Hongmiao; Sugino, Takayuki; Miyao, Masanobu; Sadoh, Taizoh

2018-06-01

High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigate solid-phase crystallization of amorphous-GeSn (a-GeSn) films (Sn concentration: 2% and thickness: 50-200 nm) on insulating substrates, where thin a-Si under-layers (thickness: 0-20 nm) are introduced between a-GeSn films and insulating substrates. The GeSn films are polycrystallized by annealing (450 °C, 20 h) for all samples irrespective of a-GeSn and a-Si thickness conditions, while the Si films remain amorphous. Analysis of crystal structures of GeSn films (thickness: 50 nm) reveals that grain sizes decrease from ˜10 μm to 2-3 μm by the introduction of a-Si under-layers (thickness: 3-20 nm). This phenomenon is attributed to the change in dominant nucleation sites from the interface to the bulk, which significantly decreases grain-boundary scattering of carriers through a decrease in the barrier heights at grain boundaries. Bulk-nucleation further becomes dominant by increasing the GeSn film thickness. As a result, a high carrier mobility of ˜550 cm2/V s is realized for GeSn films (thickness: 100 nm) grown with a-Si under-layers. This mobility is the largest among ever reported data for Ge and GeSn grown on an insulator. This technique will facilitate realization of high-speed TFTs for use in the next generation of electronics.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Polymer-modified opal nanopores.

PubMed

Schepelina, Olga; Zharov, Ilya

2006-12-05

The surface of nanopores in opal films, assembled from 205 nm silica spheres, was modified with poly(acrylamide) brushes using surface-initiated atom transfer radical polymerization. The colloidal crystal lattice remained unperturbed by the polymerization. The polymer brush thickness was controlled by polymerization time and was monitored by measuring the flux of redox species across the opal film using cyclic voltammetry. The nanopore size and polymer brush thickness were calculated on the basis of the limiting current change. Polymer brush thickness increased over the course of 26 h of polymerization in a logarithmic manner from 1.3 to 8.5 nm, leading to nanopores as small as 7.5 nm.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and the strain is relaxed through hillock/island formation instead. The kinetics-limiting parameters for these relaxation modes are identified and used to simulate their kinetics, and a deformation map is then constructed to delineate the conditions under which each mode would prevail. Such a deformation map would prove useful when one seeks to optimize the thermal stability or other mechanical properties in any ultra-thin film system.

Studies of anisotropic in-plane aligned a-axis oriented YBa(2)Cu(3)O(7-x) thin films

NASA Astrophysics Data System (ADS)

Trajanovic, Zoran

1997-12-01

Due to their layered planar structure, cuprate oxide superconductors possess remarkable anisotropic properties which may be related to their high transition temperatures. In-plane aligned a-axis YBa2Cu3O7 (YBCO) films are good candidates for such anisotropic studies. Furthermore, the full advantage of favorable material characteristics can be then utilized in applications such as vertical SNS junctions with the leads along the b-direction of YBCO and other novel junction configurations. High quality, smooth, in-plane aligned films are obtained on (100) LaSrGaO4. Form x-ray data, the films show complete b- and c-axes separation for the measured a-axis orientation. The anisotropic resistivity ratio (ρ c/ρ b), measured along the two crystallographic axes of single films gives ρ c/ρ b of ≈20 near the transition, with T cs near 90 K. In such films the grain boundary effects can be decoupled from the intrinsic anisotropic properties of YBCO. From oxygen annealing studies it was estimated that the CuO chains supply about 60% of the carriers. From J c measurements it is determined that the orientation of magnetic field with respect to the crystallographic film axes is the primary factor governing the J c values. The angular dependence of J c on the applied magnetic field is compared against various theoretical models showing the best agreement with the modified Ginzburg-Landau's anisotropic mass model (at T ≈ T c) and Tinkham's thin film model (at T < T c). By utilizing the Co-dopant, the coupling between CuO2 planes and the resulting enhancement of the intrinsic anisotropy of YBCO can be studied. Deposition and cooling conditions are shown to be the primary factor that influence the quality of dopant incorporation and the resulting oxygen ordering within the YBCO lattice. Various complex structures and devices utilizing in-plane aligned, a-axis films are presented. Other materials exhibiting in-plane alignment and a-axis growth are described. Optional substrates for achieving such films are also discussed.

Formation of nickel germanides from Ni layers with thickness below 10 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5more » nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness« less

Plasmonic extinction in gold nanoparticle-polymer films as film thickness and nanoparticle separation decrease below resonant wavelength

NASA Astrophysics Data System (ADS)

Dunklin, Jeremy R.; Bodinger, Carter; Forcherio, Gregory T.; Keith Roper, D.

2017-01-01

Plasmonic nanoparticles embedded in polymer films enhance optoelectronic properties of photovoltaics, sensors, and interconnects. This work examined optical extinction of polymer films containing randomly dispersed gold nanoparticles (AuNP) with negligible Rayleigh scattering cross-sections at particle separations and film thicknesses less than (sub-) to greater than (super-) the localized surface plasmon resonant (LSPR) wavelength, λLSPR. Optical extinction followed opposite trends in sub- and superwavelength films on a per nanoparticle basis. In ˜70-nm-thick polyvinylpyrrolidone films containing 16 nm AuNP, measured resonant extinction per particle decreased as particle separation decreased from ˜130 to 76 nm, consistent with trends from Maxwell Garnett effective medium theory and coupled dipole approximation. In ˜1-mm-thick polydimethylsiloxane films containing 16-nm AuNP, resonant extinction per particle plateaued at particle separations ≥λLSPR, then increased as particle separation radius decreased from ˜514 to 408 nm. Contributions from isolated particles, interparticle interactions and heterogeneities in sub- and super-λLSPR films containing AuNP at sub-λLSPR separations were examined. Characterizing optoplasmonics of thin polymer films embedded with plasmonic NP supports rational development of optoelectronic, biomedical, and catalytic activity using these nanocomposites.

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

Generating mixed morphology BaZrO3 artificial pinning centers for strong and isotropic pinning in BaZrO3-Y2O3 double-doped YBCO thin films

NASA Astrophysics Data System (ADS)

Chen, Shihong; Sebastian, Mary Ann; Gautam, Bibek; Wilt, Jamie; Chen, Yanbin; Sun, Lei; Xing, Zhongwen; Haugan, Timothy; Wu, Judy

2017-12-01

High concentration artificial pinning centers (APCs), such as BaZrO3 nanorods (BZO 1D APCs) aligned along the c-axis of the high temperature superconductor YBa2Cu3O7 (YBCO) can provide strong pinning of magnetic vortices and are desirable for applications in high magnetic fields. Unfortunately, in YBCO films with single-doping (SD) of BZO 1D APCs, a monotonic decreasing superconducting T c and critical current density J c(H) with BZO doping has been observed due to strain field overlap at high-concentration perfectly c-axis aligned BZO 1D APCs. In order to resolve this issue, double-doping (DD) of 2-6 vol% BZO 1D APCs and 3.0 vol% Y2O3 nanoparticles (Y2O3-NPs) in YBCO films has been explored to promote BZO-NR orientation misalignment from the c-axis. Remarkably, a monotonic increasing J c(H) with BZO 1D APCs concentration has been obtained in the BZO DD samples. Such a microstructure change is evidenced in the much smaller c-lattice parameter expansion of 0.103% in the DD samples as opposed to 0.511% in the SD counterparts and reduced c-axis alignment of the BZO 1D APCs as revealed in TEM. This yields a mixed 1D + 2D + 3D APC morphology and enhanced isotropic pinning with respect to the orientation of the H-field in the BZO DD samples.

YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

NASA Technical Reports Server (NTRS)

Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

1996-01-01

Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

High efficiency white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Gang; Dong, Weili; Gao, Hongyan; Tian, Xiaocui; Zhao, Lina; Jiang, Wenlong; Zhang, Xiyan

2015-06-01

The light emitting diodes with the structure of ITO/ m-MTDATA(20 nm)/NPB(10 nm)/CBP BCzVBi ( x, nm, 10%)/CBP(3 nm)/CBP: Ir(ppy)3: DCJTB(10 nm, 8 and 1%)/Bphen(30 nm)/Cs2CO3: Ag2O (2 nm, 20%)/Al (100 nm) employing phosphorescence sensitization and fluorescence doping, were manufactured. The performance of the devices was studied by adjusting the thickness of fluorescence dopant layer ( x = 15, 20, 25, and 30). The best performance was achieved when its thickness was 25 nm. The device has the maximum luminance of 20260 cd/m2 at applied voltage of 14 V and the maximum current efficiency of 11.70 cd/A at 7 V. The device displays a continuous change of color from yellow to white. The CIE coordinates change from (0.49, 0.48) to (0.32, 0.39) when the driving voltage is varied from 5 to 15 V.

Magnetization reversal in ferromagnetic wires patterned with antiferromagnetic gratings

NASA Astrophysics Data System (ADS)

Sani, S. R.; Liu, F.; Ross, C. A.

2017-04-01

The magnetic reversal behavior is examined for exchange-biased ferromagnetic/antiferromagnetic nanostructures consisting of an array of 10 nm thick Ni80Fe20 stripes with width 200 nm and periodicity 400 nm, underneath an orthogonal array of 10 nm thick IrMn stripes with width ranging from 200 nm to 500 nm and periodicity from 400 nm to 1 μm. The Ni80Fe20 stripes show a hysteresis loop with one step when the IrMn width and spacing are small. However, upon increasing the IrMn width and spacing, the hysteresis loops showed two steps as the pinned and unpinned sections of the Ni80Fe20 stripes switch at different fields. Micromagnetic modeling reveals the influence of geometry on the reversal behavior.

Thickness dependent charge transfer states and dark carriers density in vacuum deposited small molecule organic photocell

NASA Astrophysics Data System (ADS)

Shekhar, Himanshu; Tzabari, Lior; Solomeshch, Olga; Tessler, Nir

2016-10-01

We have investigated the influence of the active layer thickness on the balance of the internal mechanisms affecting the efficiency of copper phthalocyanine - fullerene (C60) based vacuum deposited bulk heterojunction organic photocell. We fabricated a range of devices for which we varied the thickness of the active layer from 40 to 120 nm and assessed their performance using optical and electrical characterization techniques. As reported previously for phthalocyanine:C60, the performance of the device is highly dependent on the active layer thickness and of all the thicknesses we tried, the 40 nm thin active layer device showed the best solar cell characteristic parameters. Using the transfer matrix based optical model, which includes interference effects, we calculated the optical power absorbed in the active layers for the entire absorption band, and we found that this cannot explain the trend with thickness. Measurement of the cell quantum efficiency as a function of light intensity showed that the relative weight of the device internal processes changes when going from 40 nm to 120 nm thick active layer. Electrical modeling of the device, which takes different internal processes into account, allowed to quantify the changes in the processes affecting the generation - recombination balance. Sub gap external quantum efficiency and morphological analysis of the surface of the films agree with the model's result. We found that as the thickness grows the density of charge transfer states and of dark carriers goes up and the uniformity in the vertical direction is reduced.

Indium oxide based fiber optic SPR sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, Sarika; Sharma, Navneet K., E-mail: navneetk.sharma@jiit.ac.in

2016-05-06

Surface plasmon resonance based fiber optic sensor using indium oxide layer is presented and theoretically studied. It has been found that with increase in thickness of indium oxide layer beyond 170 nm, the sensitivity of SPR sensor decreases. 170 nm thick indium oxide layer based SPR sensor holds maximum sensitivity.

Model for thickness dependence of mobility and concentration in highly conductive ZnO

NASA Astrophysics Data System (ADS)

Look, D. C.; Leedy, K. D.; Kiefer, A.; Claflin, B.; Itagaki, N.; Matsushima, K.; Suhariadi, I.

2013-03-01

The dependences of the 294-K and 10-K mobility μ and volume carrier concentration n on thickness (d = 25 - 147 nm) were examined in Al-doped ZnO (AZO) layers grown in Ar ambient at 200 °C on quartz-glass substrates. Two AZO layers were grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer grown at 300 °C in Ar/N2 ambient. Plots of the 10-K sheet concentration ns vs d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n = 8.36 x 1020 and 8.32 x 1020 cm-3, but different x-axis intercepts, δd = -4 and +13 nm, respectively. Thus, the electrical thicknesses are d - δd = d + 4 and d - 13 nm, respectively. Plots of ns vs d at 294 K produced substantially the same results. Plots of μ vs d can be well fitted with the equation μ(d) = μ(infinity symbol)/[1 + d*/(d-δd)], where d* is the thickness for which μ(infinity symbol) is reduced by a factor 2. For the B and UB samples, d* = 7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(infinity symbol) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23 x 1021 cm-3 and 1.95 x 1020 cm-3, respectively, and Drude theory to predict a plasmonic resonance at1.34 μm. The latter is confirmed by reflectance measurements.

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

NASA Astrophysics Data System (ADS)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

Study of Running Stability in Side-Suspended HTS-PMG Maglev Circular Line System

NASA Astrophysics Data System (ADS)

Zhou, Dajin; Zhao, Lifeng; Li, Linbo; Cui, Chenyu; Hsieh, Chang-Chun; Zhang, Yong; Guo, Jianqiang; Zhao, Yong

2017-07-01

A research on stability of the side-suspended HTS-PMG maglev circular line system is carried out through simulation experiment. The results show that the maglev vehicle will gradually get close to the track surface during acceleration under the action of centrifugal force, leading to decay of guidance force and occurrence of vertical eccentric motion. In case of linear array of YBa2Cu3O7-x (YBCO) bulks, the guidance force will be changed with the decreasing of the levitation gap. It can be suppressed through the complex arrangement of YBCO bulks. Fortunately, triangle array of YBCO bulks can effectively keep the guidance force constant and realize stable running during accelerating process of the prototype vehicle. Based on the research on stability of side-suspended maglev vehicle, a side-suspended PMG circular test track with diameter of 6.5 m and circumference of 20.4 m is successfully designed and established, enabling the prototype vehicle to run stably at up to 82.5 km/h under open atmosphere (9.6 × 104 Pa).

Ytterbium coating of spherical Ni(OH) 2 cathode materials for Ni-MH batteries at elevated temperature

NASA Astrophysics Data System (ADS)

He, Xiangming; Wang, Li; Li, Wen; Jiang, Changyin; Wan, Chunrong

The Yb/Co coated nickel hydroxides were prepared by precipitation of Yb(OH) 3 on the surface of spherical nickel hydroxide, followed by precipitation of Co(OH) 2 on its surface. The optimum coating content of ytterbium was around 2% (atomic concentration) to obtain high discharge capacity at 60 °C. It was shown that the discharge capacity of nickel hydroxide at high temperatures was improved by coating of ytterbium and cobalt hydroxide. The high temperature performances of the sealed AAA-sized Ni-MH batteries using Yb/Co coated nickel hydroxide as positive electrodes were carried out, showing much better than those using the un-coated and only Co(OH) 2 coated nickel hydroxide electrodes. The charge acceptance of the battery using 2% Yb and 2% Co coated nickel hydroxide reached 92% at 60 °C, where the charge acceptances for the un-coated and only cobalt coated ones were only 42 and 46%, respectively. It has shown that the Yb/Co coating is an effective way to improve the high temperature performance of nickel hydroxide for nickel-metal hydride batteries.

Preparation and Physical Properties of Segmented Thermoelectric YBa2Cu3O7-x -Ca3Co4O9 Ceramics

NASA Astrophysics Data System (ADS)

Wannasut, P.; Keawprak, N.; Jaiban, P.; Watcharapasorn, A.

2018-01-01

Segmented thermoelectric ceramics are now well known for their high conversion efficiency and are currently being investigated in both basic and applied energy researches. In this work, the successful preparation of the segmented thermoelectric YBa2Cu3O7-x -Ca3Co4O9 (YBCO-CCO) ceramic by hot pressing method and the study on its physical properties were presented. Under the optimum hot pressing condition of 800 °C temperature, 1-hour holding time and 1-ton weight, the segmented YBCO-CCO sample showed two strongly connected layers with the relative density of about 96%. The X-ray diffraction (XRD) patterns indicated that each segment showed pure phase corresponding to each respective composition. Scanning electron microscopy (SEM) results confirmed the sharp interface and good adhesion between YBCO and CCO layers. Although the chemical analysis indicated the limited inter-layer diffusion near the interface, some elemental diffusion at the boundary was expected to be the source of this strong bonding.

The effect of a nonmagnetic cap layer on the spin-polarized tunneling and magnetoresistance in double-barrier planar junctions

NASA Astrophysics Data System (ADS)

Xie, Zheng-Wei; Li, Bo-Zang; Li, Yu-Xian

2003-10-01

Within the framework of the free-electron model, the tunneling magnetoresistance (TMR) and tunneling conductance (TC) in double magnetic tunnel junctions (DMTJ) with nonmagnetic cap layer, i.e. the NM/FM/I/NM/(FM)/I/FM/NM junction is investigated. FM, NM and I represent the ferromagnetic metal, nonmagnetic metal and insulator, respectively, NM(FM) indicates that the middle layer can be NM or FM. Our results show that, due to the spin-dependent interfacial potential barriers, the influences of the thickness of the FM layer on TC and TMR in DMTJ are large, and when the thicknesses of these two FM layers are suitable a large TMR can be obtained. (

Unexpected behavior of ultra-thin films of blends of polystyrene/poly(vinyl methyl ether) studied by specific heat spectroscopy

NASA Astrophysics Data System (ADS)

Madkour, Sherif; Szymoniak, Paulina; Schick, Christoph; Schönhals, Andreas

2017-05-01

Specific heat spectroscopy (SHS) employing AC nanochip calorimetry was used to investigate the glassy dynamics of ultra-thin films (thicknesses: 10 nm-340 nm) of a polymer blend, which is miscible in the bulk. In detail, a Poly(vinyl methyl ether) (PVME)/Polystyrene (PS) blend with the composition of 25/75 wt. % was studied. The film thickness was controlled by ellipsometry while the film topography was checked by atomic force microscopy. The results are discussed in the framework of the balance between an adsorbed and a free surface layer on the glassy dynamics. By a self-assembling process, a layer with a reduced mobility is irreversibly adsorbed at the polymer/substrate interface. This layer is discussed employing two different scenarios. In the first approach, it is assumed that a PS-rich layer is adsorbed at the substrate. Whereas in the second approach, a PVME-rich layer is suggested to be formed at the SiO2 substrate. Further, due to the lower surface tension of PVME, with respect to air, a nanometer thick PVME-rich surface layer, with higher molecular mobility, is formed at the polymer/air interface. By measuring the glassy dynamics of the thin films of PVME/PS in dependence on the film thickness, it was shown that down to 30 nm thicknesses, the dynamic Tg of the whole film was strongly influenced by the adsorbed layer yielding a systematic increase in the dynamic Tg with decreasing the film thickness. However, at a thickness of ca. 30 nm, the influence of the mobile surface layer becomes more pronounced. This results in a systematic decrease in Tg with the further decrease of the film thickness, below 30 nm. These results were discussed with respect to thin films of PVME/PS blend with a composition of 50/50 wt. % as well as literature results.

Dependence of the optical constants and the performance in the SPREE gas measurement on the thickness of doped tin oxide over coatings

NASA Astrophysics Data System (ADS)

Fischer, D.; Hertwig, A.; Beck, U.; Negendank, D.; Lohse, V.; Kormunda, M.; Esser, N.

2017-11-01

In this study, thickness related changes of the optical properties of doped tin oxide were studied. Two different sets of samples were prepared. The first set was doped with iron or nickel on silicon substrate with thicknesses of 29-56 nm, the second was iron doped on gold/glass substrate with 1.6-6.3 nm. The optical constants were determined by using spectral ellipsometry (SE) followed by modelling of the dielectric function with an oscillator model using Gaussian peaks. The analysis of the optical constants shows a dependence of the refraction and the absorption on the thickness of the doped tin oxide coating. In addition to the tin oxide absorption in the UV, one additional absorption peak was found in the near-IR/red which is related to plasmonic effects due to the doping. This peak shifts from the near-IR to the red part of the visible spectrum and becomes stronger by reducing the thickness, probably due to the formation of metal nanoparticles in this layer. These results were found for two different sets of samples by using the same optical model. Afterwards the second sample set was tested in the Surface Plasmon Resonance Enhanced Ellipsometric (SPREE) gas measurement with CO gas. It was found that the thickness has significant influence on the sensitivity and thus the adsorption of the CO gas. By increasing the thickness from 1.6 nm to 5.1 nm, the sensing ability is enhanced due to a higher coverage of the surface with the over coating. This is explained by the high affinity of CO molecules to the incorporated Fe-nanoparticles in the tin oxide coating. By increasing the thickness further to 6.3 nm, the sensing ability drops because the layer disturbs the SPR sensing effect too much.

Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO

NASA Astrophysics Data System (ADS)

McCandless, Jonathan P.; Leedy, Kevin D.; Schuette, Michael L.

2018-02-01

The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.

Effect of QW thickness and numbers on performance characteristics of deep violet InGaN MQW lasers

NASA Astrophysics Data System (ADS)

Alahyarizadeh, Gh.; Amirhoseiny, M.; Hassan, Z.

2015-03-01

The performance characteristics of deep violet indium gallium nitride (InGaN) multiquantum well (MQW) laser diodes (LDs) with an emission wavelength of around 390 nm have been investigated using the integrated system engineering technical computer aided design (ISE-TCAD) software. A comparative study on the effect of quantum well (QW) thickness and number on electrical and optical performance of deep violet In0.082Ga0.918N/GaN MQW LDs have been carried out. The simulation results showed that the highest slope efficiency and external differential quantum efficiency (DQE), as well as the lowest threshold current are obtained when the number of wells is two. The different QW thickness values of 2.2, 2.5, 2.8, 3 and 3.2 nm were compared and the best results were achieved for 2.5 nm QW thickness. The radiative recombination rate decreases with increasing QW thickness because of decreasing electron and hole carrier densities in wells. By increasing QW thickness, output power decreases and threshold current increases.

Novel behaviors of anomalous Hall effect in TbFeCo ferrimagnetic thin films

NASA Astrophysics Data System (ADS)

Ando, Ryo; Komine, Takashi; Sato, Shiori; Kaneta, Shingo; Hara, Yoshiaki

2018-05-01

We investigate the temperature dependence and the thickness dependence of anomalous Hall effect (AHE) of TbFeCo ultra-thin films under high magnetic field. The sign change on temperature dependence of AHE in 20nm-thick TbFeCo film with rare-earth (RE) rich composition was observed. The AHE sign at low temperature is negative while it gradually becomes positive as the temperature increases. Moreover, the AHE sign for 5nm-thick TbFeCo film remains positive while that for 50nm-thick TbFeCo film remains negative at temperature in the range from 5 K to 400 K. The similar thickness dependence of AHE in TM-rich samples was also observed. From the mean-field approximation, the sign change temperature in AHE is related to the compensation temperature and the existence of interfacial region, which has the TM-rich composition and the weak anisotropy. Therefore, We clarified that the novel behavior of AHE sign changes in TbFeCo thin films with different thickness can be explained by the interfacial layer with weak anisotropy and two phase model.

Effect of film thickness on soft magnetic behavior of Fe2CoSi Heusler alloy for spin transfer torque device applications

NASA Astrophysics Data System (ADS)

Asvini, V.; Saravanan, G.; Kalaiezhily, R. K.; Raja, M. Manivel; Ravichandran, K.

2018-04-01

Fe2CoSi based Heusler alloy thin films were deposited on Si (111) wafer (substrate) of varying thickness using ultra high vacuum DC magnetron sputtering. The structural behavior was observed and found to be hold the L21 structure. The deposited thin films were characterized magnetic properties using vibrating sample magnetometer; the result shows a very high saturated magnetization (Ms), lowest coercivity (Hc), high curie transition temperature (Tc) and low hysteresis loss. Thin film thickness of 75 nm Fe2CoSi sample maintained at substrate temperature 450°C shows the lowest coercivity (Hc=7 Oe). In general, Fe2CoSi Heusler alloys curie transition temperature is very high, due to strong exchange interaction between the Fe and Co atoms. The substrate temperature was kept constant at 450°C for varying thickness (e.g. 5, 20, 50, 75 and 100 nm) of thin film sample. The 75 nm thickness thin film sample shows well crystallanity and good magnetic properties, further squareness ratio in B-H loop increases with the increase in film thickness.

Do age and extended culture affect the architecture of the zona pellucida of human oocytes and embryos?

PubMed

Kilani, Suha S; Cooke, Simon; Kan, Andrew K; Chapman, Michael G

2006-02-01

Advanced female age and extended in vitro culture have both been implicated in zona pellucida (ZP) hardening and thickening. This study aimed to determine the influence of (i) the woman's age and (ii) prolonged in vitro culture of embryos on ZP thickness and density using non-invasive polarized light (LC-PolScope) microscopy. ZP thickness and density (measured as retardance) were determined in oocytes, embryos and blastocysts in women undergoing intracytoplasmic sperm injection (ICSI) in two age groups (older, > 38 years; younger, < or = 38 years). A total of 193 oocytes from 29 patients were studied. The younger group contained 100 oocytes and the older group 93 oocytes. The ZP was significantly thicker in metaphase II oocytes in the older group compared with the younger group (mean +/- SD: 24.1 +/- 2.5 microm vs 23.1 +/- 3.3 microm; p = 0.01) but ZP density was equal (2.8 +/- 0.7 nm). By day 2 of culture, embryos from the two groups had similar ZP thickness (22.2 +/- 2.2 microm vs 21.7 +/- 1.6 microm; p = 0.28) and density (2.9 +/- 0.7 nm vs 2.8 +/- 0.8 nm; p = 0.57). For the embryos cultured to blastocyst (older: n = 20; younger: n = 18) ZP thickness was similar in the two groups (19.2 +/- 2.7 microm vs 19.1 +/- 5.0 microm; p = 0.8) but thinner than on day 2. The older group had significantly denser ZP than the younger group (4.2 +/- 0.5 nm vs 3.3 +/- 1.0 nm, p < 0.01). Blastocysts from both groups had significantly denser ZP than their corresponding day 2 embryos (older: 4.2 +/- 0.5 nm vs 2.9 +/- 0.7 nm, p < 0.001; younger: 3.3 +/- 1.0 nm vs 2.8 +/- 0.8 nm, p = 0.013). It is concluded that there is little relationship between ZP thickness and its density as measured by polarized light microscopy. While ZP thickness decreases with extended embryo culturing, the density of the ZP increases. ZP density increases in both age groups with extended culture and, interestingly, more in embryos from older compared with younger women.

Properties of thin SiC membrane for x-ray mask

NASA Astrophysics Data System (ADS)

Shoki, Tsutomu; Nagasawa, Hiroyuki; Kosuga, Hiroyuki; Yamaguchi, Yoichi; Annaka, Noromichi; Amemiya, Isao; Nagarekawa, Osamu

1993-06-01

We have investigated the effects of film thickness, anti-reflective (AR) coating and surface roughness on the optical transparency of silicon carbide (SiC) membrane. Peak transmittances monotonously increased as the thickness decreased. The transmittance at 633 nm for 1.05 micrometers thick SiC membrane adjusted by reactive ion etching was 70%, and increased up to 80% by an AR coating. SiC membrane with extremely smooth surface of 0.12 nm (Ra) has been obtained by polishing, and had peak transmittances of 69% and 80% at 633 nm for 2.0 micrometers and 1.0 micrometers in thickness, respectively. Poly-crystalline (beta) -SiC membrane in the suitable tensile stress range of 0.3 to 2.0 X 108 Pa and with high Young's modulus of 4.5 X 1011 Pa has been prepared by a hot wall type low pressure chemical vapor deposition, and been found to need to have thickness over 0.7 micrometers to maintain sufficient mechanical strength in processing.

Effect of ZrO2 film thickness on the photoelectric properties of mixed-cation perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Yanyan; Zhao, Li; Wei, Shoubin; Xiao, Meng; Dong, Binghai; Wan, Li; Wang, Shimin

2018-05-01

In this work, perovskite solar cells (PSCs) were fabricated in the ambient air, with a scaffold layer composed of TiO2/ZrO2 double layer as the mesoscopic layer and carbon as the counter electrode. The effect of ZrO2 thin film thickness on the photovoltaic performances of PSCs was also studied in detail. Results showed that the photoelectric properties of as-prepared PSCs largely depend on the thin film thickness due to a series of factors, including surface roughness, charge transport resistance, and electron-hole recombination rate. The power conversion efficiency of PSCs increased from 8.37% to 11.33% by varying the thin film thickness from 75 nm to 305 nm, and the optimal power conversion efficiency was realized up to the 11.33% with a thin film thickness of 167 nm. This research demonstrates a promising route for the high-efficiency and low-cost photovoltaic technology.

Stability of Polymer Ultrathin Films (<7 nm) Made by a Top-Down Approach.

PubMed

Bal, Jayanta Kumar; Beuvier, Thomas; Unni, Aparna Beena; Chavez Panduro, Elvia Anabela; Vignaud, Guillaume; Delorme, Nicolas; Chebil, Mohamed Souheib; Grohens, Yves; Gibaud, Alain

2015-08-25

In polymer physics, the dewetting of spin-coated polystyrene ultrathin films on silicon remains mysterious. By adopting a simple top-down method based on good solvent rinsing, we are able to prepare flat polystyrene films with a controlled thickness ranging from 1.3 to 7.0 nm. Their stability was scrutinized after a classical annealing procedure above the glass transition temperature. Films were found to be stable on oxide-free silicon irrespective of film thickness, while they were unstable (<2.9 nm) and metastable (>2.9 nm) on 2 nm oxide-covered silicon substrates. The Lifshitz-van der Waals intermolecular theory that predicts the domains of stability as a function of the film thickness and of the substrate nature is now fully reconciled with our experimental observations. We surmise that this reconciliation is due to the good solvent rinsing procedure that removes the residual stress and/or the density variation of the polystyrene films inhibiting thermodynamically the dewetting on oxide-free silicon.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Wug-Dong; Tanioka, Kenkichi

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a longmore » wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.« less

Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling

NASA Astrophysics Data System (ADS)

Jain, Prateek; Rastogi, Priyank; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-07-01

The direct and indirect valleys in Germanium (Ge) are separated by a very small offset, which opens up the prospect of direct tunneling in the Γ valley of an extended Ge source tunnel field effect transistor (TFET). We explore the impact of thickness scaling of extended Ge source lateral TFET on the band to band tunneling (BTBT) current. The Ge source is extended inside the gate by 2 nm to confine the tunneling in Ge only. We observe that as the thickness is scaled, the band alignment at the Si/Ge heterojunction changes significantly, which results in an increase in Ge to Si BTBT current. Based on density functional calculations, we first obtain the band structure parameters (bandgap, effective masses, etc.) for the Ge and Si slabs of varying thickness, and these are then used to obtain the thickness dependent Kane's BTBT tunneling parameters. We find that electrostatics improves as the thickness is reduced in the ultra-thin Ge film ( ≤ 10 nm). The ON current degrades as we scale down in thickness; however, the subthreshold slope ( S S AVG ) improves remarkably with thickness scaling due to subsurface BTBT. We predict that 8 nm thin devices offer the best option for optimized ON current and S S AVG .

Preparation of high-quality ultrathin transmission electron microscopy specimens of a nanocrystalline metallic powder.

PubMed

Riedl, Thomas; Gemming, Thomas; Mickel, Christine; Eymann, Konrad; Kirchner, Alexander; Kieback, Bernd

2012-06-01

This article explores the achievable transmission electron microscopy specimen thickness and quality by using three different preparation methods in the case of a high-strength nanocrystalline Cu-Nb powder alloy. Low specimen thickness is essential for spatially resolved analyses of the grains in nanocrystalline materials. We have found that single-sided as well as double-sided low-angle Ar ion milling of the Cu-Nb powders embedded into epoxy resin produced wedge-shaped particles of very low thickness (<10 nm) near the edge. By means of a modified focused ion beam lift-out technique generating holes in the lamella interior large micrometer-sized electron-transparent regions were obtained. However, this lamella displayed a higher thickness at the rim of ≥30 nm. Limiting factors for the observed thicknesses are discussed including ion damage depths, backscattering, and surface roughness, which depend on ion type, energy, current density, and specimen motion. Finally, sections cut by ultramicrotomy at low stroke rate and low set thickness offered vast, several tens of square micrometers uniformly thin regions of ∼10-nm minimum thickness. As major drawbacks, we have detected a thin coating on the sections consisting of epoxy deployed as the embedding material and considerable nanoscale thickness variations. Copyright © 2011 Wiley Periodicals, Inc.

Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2014-11-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelles, D. S.; Browning, James Frederick; Snow, Clark Sheldon

Er(D,T){sub 2-x} {sup 3}He{sub x}, erbium di-tritide, films of thicknesses 500 nm, 400 nm, 300 nm, 200 nm, and 100 nm were grown and analyzed by Transmission Electron Microscopy, X-Ray Diffraction, and Ion Beam Analysis to determine variations in film microstructure as a function of film thickness and age, due to the time-dependent build-up of {sup 3}He in the film from the radioactive decay of tritium. Several interesting features were observed: One, the amount of helium released as a function of film thickness is relatively constant. This suggests that the helium is being released only from the near surface regionmore » and that the helium is not diffusing to the surface from the bulk of the film. Two, lenticular helium bubbles are observed as a result of the radioactive decay of tritium into {sup 3}He. These bubbles grow along the [111] crystallographic direction. Three, a helium bubble free zone, or 'denuded zone' is observed near the surface. The size of this region is independent of film thickness. Four, an analysis of secondary diffraction spots in the Transmission Electron Microscopy study indicate that small erbium oxide precipitates, 5-10 nm in size, exist throughout the film. Further, all of the films had large erbium oxide inclusions, in many cases these inclusions span the depth of the film.« less

Electron-positron momentum distribution measurements of high-T(sub c) superconductors and related systems

NASA Astrophysics Data System (ADS)

Wachs, A. L.; Turchi, P. E. A.; Howell, R. H.; Jean, Y. C.; Fluss, M. J.; West, R. N.; Kaiser, J. H.; Rayner, S.; Hahgighi, H.; Merkle, K. L.

1989-06-01

We discuss our measurements of the 2D-angular correlation of positron annihilation radiation (ACAR) in La(sub 2)CuO(sub 4), YBa(sub 2)Cu(sub 3)O(sub 7) (YBCO), and NiO. The measurements for NiO are the first such 2D-ACAR measurements; the YBCO results are of a higher statistical quality than previously reported in the literature. The data are compared with complementary theoretical calculations and with each other. We discuss the implication of our analysis for ACAR studies of similar and related systems.

High-Tc superconductor coplanar waveguide filter

NASA Technical Reports Server (NTRS)

Chew, Wilbert; Bajuk, Louis J.; Cooley, Thomas W.; Foote, Marc C.; Hunt, Brian D.; Rascoe, Daniel L.; Riley, A. L.

1991-01-01

Coplanar waveguide (CPW) low-pass filters made of YBa2Cu3O(7-delta) (YBCO) on LaAlO3 substrates, with dimensions suited for integrated circuits, were fabricated and packaged. A complete filter gives a true idea of the advantages and difficulties in replacing thin-film metal with a high-temperature superconductor in a practical circuit. Measured insertion losses in liquid nitrogen were superior to the loss of a similar thin-film copper filter throughout the 0- to 9.5-GHz passband. These results demonstrate the performance of fully patterned YBCO in a practical CPW structure after sealing in a hermetic package.

Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

NASA Astrophysics Data System (ADS)

Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

1992-09-01

Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

Phase Transitions and Domain Structure in Mixed Tetragonal-Rhombohedral BiFeO3 thin films using Raman Spectroscopy and Nonlinear Optics

NASA Astrophysics Data System (ADS)

Vlahos, E.; Kumar, A.; Denev, S.; Melville, A.; Adamo, C.; Ihlefeld, J. F.; Sheng, G.; Zeches, R. J.; Zhang, J. X.; He, Q.; Yang, C. H.; Erni, R.; Rossell, M. D.; J, A.; Hatt; Chu, Y.-H.; Wang, C. H.; Ederer, C.; Gopalan, V.; Chen, L. Q.; Schlom, D. G.; Spaldin, N. A.; Martin, L. W.; Ramesh, R.; Tenne, Dmitri

2010-03-01

We have shown that biaxially strained BiFeO3 thin films can undergo an isosymmetric phase transition from a rhombohedral-like to a tetragonal-like phase. This talk discusses the evolution of the tetragonal and the mixed phases in BiFeO3/YAlO3 thin films with varying film thickness using optical second harmonic generation (SHG) and Raman spectroscopy. 25nm, 75nm, and 225 nm thick films were studied; thinner films are dominated by the tetragonal phase, whereas thicker films exhibit both tetragonal and rhombohedral phases. The evolution of these phases as function of film thickness and temperature was experimentally determined.

Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

NASA Astrophysics Data System (ADS)

Kumar, S. Vinodh; Raja, M. Manivel; Pandi, R. Senthur; Pandyan, R. Kodi; Mahendran, M.

2016-05-01

Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L12 cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

In situ nanoindentation study of plastic Co-deformation in Al-TiN nanocomposites

DOE PAGES

Li, N.; Wang, H.; Misra, A.; ...

2014-10-16

We performed in situ indentation in a transmission electron microscope on Al-TiN multilayers with individual layer thicknesses of 50 nm, 5 nm and 2.7 nm to explore the effect of length scales on the plastic co-deformability of a metal and a ceramic. At 50 nm, plasticity was confined to the Al layers with easy initiation of cracks in the TiN layers. At 5 nm and below, cracking in TiN was suppressed and post mortem measurements indicated a reduction in layer thickness in both layers. Our results demonstrate the profound size effect in enhancing plastic co-deformability in nanoscale metal-ceramic multilayers.

Correlation between skin, bone, and cerebrospinal fluid layer thickness and optical coefficients measured by multidistance frequency-domain near-infrared spectroscopy in term and preterm infants.

PubMed

Demel, Anja; Feilke, Katharina; Wolf, Martin; Poets, Christian F; Franz, Axel R

2014-01-01

Near-infrared spectroscopy (NIRS) is increasingly used in neonatal intensive care. We investigated the impact of skin, bone, and cerebrospinal fluid (CSF) layer thickness in term and preterm infants on absorption-(μa) and/or reduced scattering coefficients (μs') measured by multidistance frequency-domain (FD)-NIRS. Transcranial ultrasound was performed to measure the layer thicknesses. Correlations were only statistically significant for μa at 692 nm with bone thickness and μs' at 834 nm with skin thickness. There is no evidence that skin, bone, or CSF thickness have an important effect on μa and μs'. Layer thicknesses of skin, bone, and CSF in the range studied do not seem to affect cerebral oxygenation measurements by multidistance FD-NIRS significantly.

High efficiency fluorescent white OLEDs based on DOPPP

NASA Astrophysics Data System (ADS)

Zhang, Gang; Chen, Chen; Lang, Jihui; Zhao, Lina; Jiang, Wenlong

2017-08-01

The white organic light-emitting devices (WOLED) with the structures of ITO/m-MTDATA (10 nm)/NPB (30 nm)/Rubrene (0.2 nm)/DOPPP (x nm)/TAz (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al and ITO/NPB (30 nm)/DPAVBi:Rubrene (2 wt.%, 20 nm)/ DOPPP (x nm)/TAZ (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al (100 nm) have been fabricated by the vacuum thermal evaporation method. The results show that the chroma of the non-doped device is the best and the color coordinates are in the range of white light. The maximum luminance is 12,750 cd/m2 and the maximum current efficiency is 8.55 cd/A. The doped device A has the maximum luminance (16,570 cd/m2), when the thickness of blue layer DOPPP is 25 nm, and the doped device B achieves the highest efficiency (10.47 cd/A), when the thickness of DOPPP is 15 nm. All the performances of the doped devices are better than the non-doped one. The results demonstrate that the doped structures can realize the energy transfer and then improve the performance of the device effectively.

Analysis of Soft Error Rates in 65- and 28-nm FD-SOI Processes Depending on BOX Region Thickness and Body Bias by Monte-Carlo Based Simulations

NASA Astrophysics Data System (ADS)

Zhang, Kuiyuan; Umehara, Shigehiro; Yamaguchi, Junki; Furuta, Jun; Kobayashi, Kazutoshi

2016-08-01

This paper analyzes how body bias and BOX region thickness affect soft error rates in 65-nm SOTB (Silicon on Thin BOX) and 28-nm UTBB (Ultra Thin Body and BOX) FD-SOI processes. Soft errors are induced by alpha-particle and neutron irradiation and the results are then analyzed by Monte Carlo based simulation using PHITS-TCAD. The alpha-particle-induced single event upset (SEU) cross-section and neutron-induced soft error rate (SER) obtained by simulation are consistent with measurement results. We clarify that SERs decreased in response to an increase in the BOX thickness for SOTB while SERs in UTBB are independent of BOX thickness. We also discover SOTB develops a higher tolerance to soft errors when reverse body bias is applied while UTBB become more susceptible.

Effects of lattice deformation on magnetic properties of electron-doped La0.8Hf0.2MnO3 thin films

NASA Astrophysics Data System (ADS)

Wu, Z. P.; Jiang, Y. C.; Gao, J.

2013-05-01

The lattice deformation effects on electric and magnetic properties of electron-doped La0.8Hf0.2MnO3 (LHMO) thin films have been systematically investigated. LHMO films with various thicknesses (15 nm, 40 nm, and 80 nm) were grown on (001) SrTiO3 and (001) LaAlO3 substrates, which induces in-plane tensile and compressive biaxial stress, respectively. The metal-insulator phase transition temperature (TP) and magnetoresistance (MR) effect show a strong dependence on film thickness. TP increases with a decrease in thickness and is enhanced as the lattice strain rises, regardless of whether it is tensile or compressive. The maximum MR ratio is suppressed by reduction of the film thickness. These anomalous phenomena may be attributed to the competition between the strain induced modification of the Mn-O bond length and the eg orbital stability.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

PubMed

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Increased magnetic damping in ultrathin films of Co2FeAl with perpendicular anisotropy

NASA Astrophysics Data System (ADS)

Takahashi, Y. K.; Miura, Y.; Choi, R.; Ohkubo, T.; Wen, Z. C.; Ishioka, K.; Mandal, R.; Medapalli, R.; Sukegawa, H.; Mitani, S.; Fullerton, E. E.; Hono, K.

2017-06-01

We estimated the magnetic damping constant α of Co2FeAl (CFA) Heusler alloy films of different thicknesses with an MgO capping layer by means of time-resolved magneto-optical Kerr effect and ferromagnetic resonance measurements. CFA films with thicknesses of 1.2 nm and below exhibited perpendicular magnetic anisotropy arising from the presence of the interface with MgO. While α increased gradually with decreasing CFA film thickness down to 1.2 nm, it was increased substantially when the thickness was reduced further to 1.0 nm. Based on the microstructure analyses and first-principles calculations, we attributed the origin of the large α in the ultrathin CFA film primarily to the Al deficiency in the CFA layer, which caused an increase in the density of states and thereby in the scatterings of their spins.

Magnetic properties of ultrathin tetragonal Heusler D022-Mn3Ge perpendicular-magnetized films

NASA Astrophysics Data System (ADS)

Sugihara, A.; Suzuki, K. Z.; Miyazaki, T.; Mizukami, S.

2015-05-01

We investigated the crystal structure and magnetic properties of Manganese-germanium (Mn3Ge) films having the tetragonal D022 structure, with varied thicknesses (5-130 nm) prepared on chromium (Cr)-buffered single crystal MgO(001) substrates. A crystal lattice elongation in the in-plane direction, induced by the lattice mismatch between the D022-Mn3Ge and the Cr buffer layer, increased with decreasing thickness of the D022-Mn3Ge layer. The films exhibited clear magnetic hysteresis loops with a squareness ratio close to unity, and a step-like magnetization reversal even at a 5-nm thickness under an external field perpendicular to the film's plane. The uniaxial magnetic anisotropy constant of the films showed a reduction to less than 10 Merg/cm3 in the small thickness range (≤20 nm), likely due to the crystal lattice elongation in the in-plane direction.

Tuning the thickness of electrochemically grafted layers in large area molecular junctions

NASA Astrophysics Data System (ADS)

Fluteau, T.; Bessis, C.; Barraud, C.; Della Rocca, M. L.; Martin, P.; Lacroix, J.-C.; Lafarge, P.

2014-09-01

We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2-27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

Effects of the PPy layer thickness on Co-PPy composite films

NASA Astrophysics Data System (ADS)

Haciismailoglu, Murside

2015-11-01

Co-PPy composite films were electrodeposited on ITO substrate from two different solutions potentiostatically. Firstly, the PPy layers with the thicknesses changing from 20 to 5000 nm were produced on ITO. Then Co was electrodeposited on these PPy/ITO substrates with a charge density of 1000 mC cm-2. The electrochemical properties were investigated by the current density-time transients and the variation of the elapsed time for the Co deposition depending on the PPy layer thickness. X-ray photoelectron (XPS) spectra indicated the presence of both Co metal and its oxides on the surface. The weak reflections of the Co3O4, CoO and hcp Co were detected by the X-ray diffraction (XRD) technique. According to scanning electron microscopy (SEM) images, the thickness of the PPy layer strongly affects the Co nucleation. The composite films with the PPy layer thinner than 200 nm and thicker than 2000 nm have an isotropic magnetic behavior due to the symmetrical crystal field. The composite films with the PPy layer thicknesses between 200 and 2000 nm have an anisotropic magnetic behavior attributable to the deterioration of this symmetrical crystal field by the PPy bubbles on the surface. All films are hard magnetic material, since the coercivities are larger than 125 Oe.

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

NASA Astrophysics Data System (ADS)

Feng, Liang; Ping, Chen; De-Gang, Zhao; De-Sheng, Jiang; Zhi-Juan, Zhao; Zong-Shun, Liu; Jian-Jun, Zhu; Jing, Yang; Wei, Liu; Xiao-Guang, He; Xiao-Jing, Li; Xiang, Li; Shuang-Tao, Liu; Hui, Yang; Li-Qun, Zhang; Jian-Ping, Liu; Yuan-Tao, Zhang; Guo-Tong, Du

2016-05-01

We have investigated the electron affinity of Si-doped AlN films (N Si = 1.0 × 1018-1.0 × 1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Characterization of nanometer-thick polycrystalline silicon with phonon-boundary scattering enhanced thermoelectric properties and its application in infrared sensors.

PubMed

Zhou, Huchuan; Kropelnicki, Piotr; Lee, Chengkuo

2015-01-14

Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK(-1) which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D*) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 10(8) and 1.83 × 10(8) cm Hz(1/2) W(-1) for sensors of 52 nm thick poly-Si, and 5.75 × 10(7) and 3.95 × 10(7) cm Hz(1/2) W(-1) for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology.

Structural and optical properties of CuS thin films deposited by Thermal co-evaporation

NASA Astrophysics Data System (ADS)

Sahoo, A. K.; Mohanta, P.; Bhattacharyya, A. S.

2015-02-01

Copper sulfide (CuS) thin films with thickness 100, 150 and 200 nm have been deposited on glass substrates by thermal co-evaporation of Copper and Sulphur. The effect of CuS film thickness on the structural and optical properties have investigated and discussed. Structural and optical investigations of the films were carried out by X-ray diffraction, atomic force microscopy, high-resolution transmission electron microscopy and UV spectroscopy. XRD and selected area electron diffraction conforms that polycrystalline in nature with hexagonal crystal structure. AFM studies revealed a smooth surface morphology with root mean-square roughness values increases from 24 nm to 42 nm as the film thickness increase from 100 nm to 200 nm. AFM image showed that grain size increases with thickness of film increases and good agreement with the calculated from full width half maximum of the X-ray diffraction peak using Scherrer's formula and Williamson-Hall plot. The absorbance of the thin films were absorbed decreases with wavelength through UV-visible regions but showed a increasing in the near-infrared regions. The reflectance spectra also showed lower reflectance peak (25% to 32%) in visible region and high reflectance peak (49 % to 54 %) in near-infrared region. These high absorbance films made them for photo-thermal conversion of solar energy.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

[Studies on the saliva adsorption and the salivary film property on the hydroxyapatite surface].

PubMed

Yao, Jiang-wu; Chen, Guo-yang; Lin, Feng; Lin, Chang-jian; Tao, Tao

2012-07-01

To evaluate the thickness and viscoelasticity of whole saliva (WS), parotid saliva (PS) and submandibular/sublingual gland saliva (SMSLS) film adsorption on the hydroxyapatite (HA) surface. Ultra-thin layer of HA nanocrystals was coated on the dissipation TiO(2) sensor of gold quartz crystal microbalance using electrophoretic deposition technique. The thickness of the HA layer was measured by the ellipsometer, and element analysis was conducted using X-ray photoelectron spectroscopy. Atomic force microscopy and scanning electron microscope were used to observe its morphology. The in-situ adsorption thickness, the shear elastic modulus and the shear viscosity of salivary layers (WS, PS and SMSLS) on HA surfaces were investigated. The statistical data were analysed by an one-way ANOVA analysis followed by a SNK-q test. The results show that the HA layer was a plate-like morphology with 1.53 ± 0.12 in Ca/P molar ratio, (19.1 ± 0.9) nm in the thickness and (6.5 ± 1.6) nm in the roughness. The thickness of salivary film was SMSLS [(21.84 ± 1.25) nm] > WS[(17.91 ± 1.35) nm] > PS [(14.30 ± 1.03 nm) (P < 0.05). The shear elastic modulus of salivary film was PS [(0.61 ± 0.01) MPa] > SMSLS [(0.31 ± 0.09) MPa] and WS [(0.25 ± 0.03) MPa] (P < 0.05). The trend of the shear viscosity was opposite to one of thickness. The characteristics of saliva adsorption on HA surface suggest that the thicker, softer and more hydrated properties for the SMSLS and WS films are likely to afford a stronger lubrication to protect oral surfaces from wear and dehydration. The viscoelasticity of the PS film is probably related to the retention covering the oral cavity.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

Uncovering a new quasi-2D CuO2 plane between the YBa2Cu3O7 and CeO2 buffer layer of coated conductors

NASA Astrophysics Data System (ADS)

Li, Zhi-Xin; Cao, Jin-Jin; Gou, Xiao-Fan; Wang, Tian-Ge; Xue, Feng

2018-01-01

We report a discovery of the quasi-two-dimensional (quasi-2D) CuO2 plane between the superconductor YBa2Cu3O7 (YBCO) and CeO2 buffer layer (mostly used in the fabrication) of coated conductors through the atomistic computer simulations with the molecular dynamics (MD) and first-principle calculations. For an YBCO coated conductor with multilayer structures, the buffer layers deposited onto a substrate are mainly considered to transfer a strong biaxial texture from the substrate to the YBCO layer. To deeply understand the tuning mechanism of the texture transfer, exploring the complete atomic-level picture of the structure between the YBa2Cu3O7/CeO2 interfaces is firstly required. However, the related observation data have not been available due to some big challenges of experimental techniques. With the MD simulations, having tested the accuracy of the potential functions for the YBa2Cu3O7/CeO2 interface, we constructed a total of 54 possible atom stacking models of the interface and identified its most appropriate and stable structure according to the criterion of the interface adhesion energy and the coherent characterization. To further verify the stability of the identified structure, we performed the first-principle calculations to obtain the adhesion energy and developed the general knowledge of the interface structure. Finally, a coherent interface formed with a new built quasi-2D CuO2 plane that is structurally similar to the CuO2 plane inside bulk YBCO was determined.

Positron Annihilation Measurements of High Temperature Superconductors

NASA Astrophysics Data System (ADS)

Jung, Kang

1995-01-01

The temperature dependence of positron annihilation parameters has been measured for basic YBCO, Dy-doped, and Pr-doped superconducting compounds. The physical properties, such as crystal structure, electrical resistance, and critical temperature, have been studied for all samples. In the basic YBCO and Dy-doped samples, the defect -related lifetime component tau_{2 } was approximately constant from room temperature to above the critical temperature and then showed a step -like decrease in the temperature range 90K { ~} 40K. No significant temperature dependence was found in the short- and long-lifetime components, tau_{1} and tau_{3}. The x-ray diffraction data showed that the crystal structure of these two samples was almost the same. These results indicated that the electronic structure changed below the critical temperature. No transition was observed in the Pr-doped YBCO sample. The advanced computer program "PFPOSFIT" for positron lifetime analysis was modified to run on the UNIX system of the University of Utah. The destruction of superconductivity with Pr doping may be due to mechanisms such as hole filling or hole localization of the charge carriers and may be related to the valence state of the Pr ion. One-parameter analyses like the positron mean lifetime parameter and the Doppler line shape parameter S also have been studied. It was found that a transition in Doppler line shape parameter S was associated with the superconducting transition temperature in basic YBCO, Dy -doped, and 0.5 Pr-doped samples, whereas no transition was observed in the nonsuperconducting Pr-doped sample. The Doppler results indicate that the average electron momentum at the annihilation sites increases as temperature is lowered across the superconducting transition range and that electronic structure change plays an important role in high temperature superconductivity.

In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

NASA Technical Reports Server (NTRS)

Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

1990-01-01

Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

NASA Technical Reports Server (NTRS)

Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

1991-01-01

Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

New magnetic phase and magnetic coherence in Nd/Sm(001) superlattices

NASA Astrophysics Data System (ADS)

Soriano, S.; Dufour, C.; Dumesnil, K.; Stunault, A.

2006-06-01

In order to investigate magnetic phenomena in Nd and Sm layers separately, resonant x-ray magnetic scattering experiments have been performed to study Nd/Sm(001) superlattices with different relative layers thickness. The samples were grown using molecular beam epitaxy, and optimized to yield dhcp Sm growth and thus a coherent dhcp stacking across the Nd/Sm superlattices. The magnetic phases in Sm layers are very close to the ones evidenced in dhcp thick films. In contrast, the magnetism in Nd layers shows strong differences with the bulk case. In superlattices with a large Sm thickness (>8 nm), no magnetic scattering usually associated with Nd magnetic structure was detected. In superlattices with smaller Sm thickness (<4 nm), new Nd magnetic phases have been observed. A detailed analysis of the propagation of the magnetic structures in the cubic and hexagonal sublattices of both Sm and Nd is presented. Both Sm hexagonal and cubic magnetic phases propagate coherently through 3.7 nm thick Nd layers but remain confined in Sm layers when the Nd layers are 7.1 nm thick. In contrast, the critical Sm thickness allowing a coherent propagation of Nd magnetic order is different for the hexagonal and cubic sublattices above 5 K. Finally, we show that: (i) a spin-density wave and a 4f magnetic order with perpendicular polarization are exclusive on a given crystallographic site (either hexagonal or cubic); (ii) a 4f magnetic order on a crystallographic site does not perturb the establishment of a spin-density wave with a perpendicular polarization on the other site.

Highly Efficient White Organic Light Emitting Diodes Using New Blue Fluorescence Emitter.

PubMed

Kim, Seungho; Kim, Beomjin; Lee, Jaehyun; Yu, Young-Jun; Park, Jongwook

2015-07-01

Two different emitting compounds, 1-[1,1';3',1"]Terphenyl-5'-yl-6-(10-[1,1';3',1"]terpheny-5'-yl- anthracen-9-yl)-pyrene (TP-AP-TP) and Poly-phenylene vinylene derivative (PDY 132) were used to white OLED device. By incorporating adjacent blue and yellow emitting layers in a multi-layered structure, highly efficient white emission has been attained. The device was fabricated with a hybrid configuration structure: ITO/PEDOT (40 nm)/PDY-132 (8-50 nm)/ NPB (10 nm)/TP-AP-TP (30 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). After fixing TP-AP-TP thickness of 30 nm by evaporation, PDY-132 thickness varied with 8, 15, 35, and 50 nm by spin coating in device. The luminance efficiency of the white devices at 10 mA/cm2 were 2.93 cd/A-6.55 cd/A. One of white devices showed 6.55 cd/A and white color of (0.290, 0.331).

Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

NASA Astrophysics Data System (ADS)

Carl, D. A.; Hess, D. W.; Lieberman, M. A.; Nguyen, T. D.; Gronsky, R.

1991-09-01

Thin (3-300-nm) oxides were grown on single-crystal silicon substrates at temperatures from 523 to 673 K in a low-pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O-, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (xox), overall potential drop (Vox) and ion current (ji) in the space-charge limited transport region was of the form: ji ∝ V2ox/x3ox. Transmission electron microscopy analysis of 5-60-nm-thick anodized films indicated that the silicon-silicon dioxide interface was indistinguishable from that of thermal oxides grown at 1123 K. High-frequency capacitance-voltage (C-V) and ramped bias current-voltage (I-V) studies performed on 5.4-30-nm gate thickness capacitors indicated that the as-grown ECR films had high levels of fixed oxide charge (≳1011 cm-2) and interface traps (≳1012 cm-2 eV-1). The fixed charge level could be reduced to ≊4×1010 cm-2 by a 20 min polysilicon gate activation anneal at 1123 K in nitrogen; the interface trap density at mid-band gap decreased to ≊(1-2)×1011 cm-2 eV-1 after this process. The mean breakdown strength for anodic oxides grown under optimum conditions was 10.87±0.83 MV cm-1. Electrical properties of the 5.4-8-nm gates compared well with thicker films and control dry thermal oxides of similar thicknesses.

Stripe domains and magnetoresistance in thermally deposited nickel films

NASA Astrophysics Data System (ADS)

Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

2004-05-01

We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

A novel evaluation strategy for fatigue reliability of flexible nanoscale films

NASA Astrophysics Data System (ADS)

Zheng, Si-Xue; Luo, Xue-Mei; Wang, Dong; Zhang, Guang-Ping

2018-03-01

In order to evaluate fatigue reliability of nanoscale metal films on flexible substrates, here we proposed an effective evaluation way to obtain critical fatigue cracking strain based on the direct observation of fatigue damage sites through conventional dynamic bending testing technique. By this method, fatigue properties and damage behaviors of 930 nm-thick Au films and 600 nm-thick Mo-W multilayers with individual layer thickness 100 nm on flexible polyimide substrates were investigated. Coffin-Manson relationship between the fatigue life and the applied strain range was obtained for the Au films and Mo-W multilayers. The characterization of fatigue damage behaviors verifies the feasibility of this method, which seems easier and more effective comparing with the other testing methods.

Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation

NASA Astrophysics Data System (ADS)

Park, Young Woon; Jerng, Sahng-Kyoon; Jeon, Jae Ho; Roy, Sanjib Baran; Akbar, Kamran; Kim, Jeong; Sim, Yumin; Seong, Maeng-Je; Kim, Jung Hwa; Lee, Zonghoon; Kim, Minju; Yi, Yeonjin; Kim, Jinwoo; Noh, Do Young; Chun, Seung-Hyun

2017-03-01

The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 °C-370 °C. The surface consists of a mixture of N and (N ± 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (±0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of ˜100 nm and clear Moiré patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm2 V-1 s-1 and 6.7 cm2 V-1 s-1 for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.

Growth mechanism, surface and optical properties of ZnO nanostructures deposited on various Au-seeded thickness obtained by mist-atomization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afaah, A. N., E-mail: afaahabdullah@yahoo.com; Aadila, A., E-mail: aadilaazizali@gmail.com; Asib, N. A. M., E-mail: amierahasib@yahoo.com

2016-07-06

In this paper, growth mechanisms of ZnO nanostructures on non-seeded glass, 6 nm and 12 nm Au seed layer obtained by mist-atomization was proposed. ZnO films were successfully deposited on glass substrate with different thickness of Au seed layer i.e. 6 nm and 12 nm. The surface and optical properties of the prepared samples were investigated using Field emission scanning electron microscopy (FESEM) and photoluminescence (PL). FESEM micrograph show that ZnO nanostructure deposited on 6 nm Au seed layer has uniform formation and well distributed. From PL spectroscopy, the UV emission shows that ZnO deposited on 6 nm Au seedmore » layer has the more intense UV intensity which proved that high crystal quality of nanostructured ZnO deposited on 6 nm Au seed layer.« less

Electrical, structural and optical properties of tellurium thin films on silicon substrate

NASA Astrophysics Data System (ADS)

Arora, Swati; Vijay, Y. K.

2018-05-01

Tellurium (Te) thin films of various thicknesses (200nm, 275nm, 350nm & 500nm) were prepared on Silicon (Si) using thermal evaporation at vacuum of 10-5 torr. It is observed that the resistivity decreases exponentially with the Increases Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the band gap will exponentially decreases. Samples were analysed through X-ray diffraction and atomic force microscopy to attain complete and reliable micro structural in order.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. Themore » capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.« less

Analysis and optimization of RC delay in vertical nanoplate FET

NASA Astrophysics Data System (ADS)

Woo, Changbeom; Ko, Kyul; Kim, Jongsu; Kim, Minsoo; Kang, Myounggon; Shin, Hyungcheol

2017-10-01

In this paper, we have analyzed short channel effects (SCEs) and RC delay with Vertical nanoplate FET (VNFET) using 3-D Technology computer-aided design (TCAD) simulation. The device is based on International Technology Road-map for Semiconductor (ITRS) 2013 recommendations, and it has initially gate length (LG) of 12.2 nm, channel thickness (Tch) of 4 nm, and spacer length (LSD) of 6 nm. To obtain improved performance by reducing RC delay, each dimension is adjusted (LG = 12.2 nm, Tch = 6 nm, LSD = 11.9 nm). It has each characteristic in this dimension (Ion/Ioff = 1.64 × 105, Subthreshold swing (S.S.) = 73 mV/dec, Drain-induced barrier lowering (DIBL) = 60 mV/V, and RC delay = 0.214 ps). Furthermore, with long shallow trench isolation (STI) length and thick insulator thickness (Ti), we can reduce RC delay from 0.214 ps to 0.163 ps. It is about a 23.8% reduction. Without decreasing drain current, there is a reduction of RC delay as reducing outer fringing capacitance (Cof). Finally, when source/drain spacer length is set to be different, we have verified RC delay to be optimum.

Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

PubMed

Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

2016-06-01

We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V.

GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.

PubMed

Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro

2018-03-20

Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7  dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.

Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Tekgül, Atakan; Alper, Mürsel; Kockar, Hakan

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current-time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of -0.3 and -1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices.

Critical current densities in superconducting Y-Ba-Cu-O prepared by chelating method

NASA Astrophysics Data System (ADS)

Fujisawa, Tadashi; Okuyama, Katsuro; Ohshima, Shigetoshi; Takagi, Akira

1990-10-01

The IDA, NTA, HEDTA, EDTA, TTHA, and DTPA chelating agents have been used to prepare the Y-Ba-Cu-O compounds whose critical current is presently investigated. It is noted that the precursor YBCO prepared from large stability-constant metal complexes (HEDTA, EDTA, DTPA, and TTHA) exhibited very fine and homogeneous particles. The critical current density of a 1 x 4 x 15 mm block of YBCO sintered at 880-910 C for 24 h and subsequently annealed at 500 C in an O2 flow was approximately 500 A/sq cm at 77 K, in zero magnetic field.

Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

NASA Technical Reports Server (NTRS)

Chorey, C. M.; Miranda, F. A.; Bhasin, K. B.

1991-01-01

Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

Dual nature of 3 d electrons in YbT 2 Zn 20 (T = Co; Fe) evidenced by electron spin resonance

DOE PAGES

Ivanshin, V. A.; Litvinova, T. O.; Gimranova, K.; ...

2015-03-18

The electron spin resonance experiments were carried out in the single crystals YbFe 2Zn 20. The observed spin dynamics is compared with that in YbCo 2Zn 20 and Yb 2Co 12P 7 as well as with the data of inelastic neutron scattering and electronic band structure calculations. Our results provide direct evidence that 3d electrons are itinerant in YbFe 2Zn 20 and localized in YbCo 2Zn 20. Possible connection between spin paramagnetism of dense heavy fermion systems, quantum criticality effects, and ESR spectra is discussed.

Static and dynamic stability of the guidance force in a side-suspended HTS maglev system

NASA Astrophysics Data System (ADS)

Zhou, Dajin; Cui, Chenyu; Zhao, Lifeng; Zhang, Yong; Wang, Xiqing; Zhao, Yong

2017-02-01

The static and dynamic stability of the guidance force in a side-suspended HTS-PMG (permanent magnetic guideway) system were studied theoretically and experimentally. It is found that there are two types of guidance force that exist in the HTS-PMG system, which are sensitive to the levitation gap and the arrangement of YBCO bulks around the central axis of the PMG. An optimized YBCO array was used to stabilize the system, which enabled a side-suspended HTS-PMG maglev vehicle to run stably at 102 km h-1 on a circular test track with 6.5 m in diameter.

Acid anhydrides: a simple route to highly pure organometallic solutions for superconducting films

NASA Astrophysics Data System (ADS)

Roma, N.; Morlens, S.; Ricart, S.; Zalamova, K.; Moreto, J. M.; Pomar, A.; Puig, T.; Obradors, X.

2006-06-01

The presence of impurities in the precursor metal carboxylate solutions for the preparation of epitaxial thin films by metal organic decomposition (MOD) is substantially avoided by the use of acid anhydrides. In particular, trifluoroacetic anhydride (TFAA) was used for the synthesis of the starting Y, Ba and Cu trifluoroacetates used in YBa2Cu3O7-x (YBCO) preparation by the MOD process. In this way, highly stable organometallic precursors and a short pyrolysis process could be used leading to YBCO films with high critical currents (Jc >=2-4 MA cm-2 at 77 K). Furthermore, the reproducibility of the results has been ascertained.

Electronic structure in high temperature superconducting oxides

NASA Astrophysics Data System (ADS)

Howell, R. H.; Sterne, P.; Solal, F.; Fluss, M. J.; Tobin, J.; Obrien, J.; Radousky, H. B.; Haghighi, H.; Kaiser, J. H.; Rayner, S. L.

1991-08-01

We have performed measurements on entwined single crystals of YBCO using both photoemission and positron angular correlation of annihilation radiation and on single crystals of LSCO using only angular correlation. Fermi surface features in good agreement with band theory were found and identified in all of the measurements. In photoemission, the Fermi momentum was fixed for several points and the band dispersion below the Fermi energy was mapped. In positron angular correlation measurements, the shape of the Fermi surface was mapped for the CuO chains (YBCO) and the CuO planes (LSCO). Demonstration of the existence of Fermi surfaces in the HTSC materials points a direction for future theoretical considerations.

Effect of the Cu/Ba ratio for the YBCO deposition onto IBAD template by the MOCVD method

NASA Astrophysics Data System (ADS)

Choi, J. K.; Kim, H. J.; Jun, B. H.; Kim, C. J.

2005-10-01

YBa2Cu3O7-x (YBCO) thin films were fabricated by the metal organic chemical vapor deposition (MOCVD) using a single liquid source. The copper/barium (Cu/Ba) ratio was varied from 1.26 to 1.38 to optimize the deposition condition. The IBAD template (CeO2/YSZ/stainless steel) was used as a substrate. The growth features of the YBCO films were not significantly influenced by the Cu/Ba ratio, while the superconducting transition temperature (Tc) and critical current (Ic) depended on the Cu/Ba ratio. When Cu/Ba ratio was between 1.26 and 1.29, Tc was as low as 80 K, while as Cu/Ba ratio increased to 1.38, it increased to above 85 K. The highest Tc (89.0 K) and Ic (46.3 A/cm-width) were achieved at the Cu/Ba ratio of 1.38 (Y:Ba:Cu = 1:2.1:2.9). It indicates that the optimum Cu/Ba ratio which differs from stoichiometric balance exists for the formation of the superconducting phase with a high Tc and Ic in MOCVD method.

Grain growth simulation of [001] textured YBCO films grown on (001) substrates with large lattice misfit: Prediction of misorientations of the remaining boundaries

NASA Astrophysics Data System (ADS)

Tsai, Jack W. H.; Ling, Shiun; Rodriguez, Julio C.; Mustapha, Zarina; Chan, Siu-Wai

2001-04-01

We study the effects of (1) the variation of grain boundary energy with misorientation and (2) the large lattice misfit (>3%) between the films and substrates on grain growth in films by method of Monte Carlo simulations. The results from the grain growth simulation in YBa2Cu3O7-x (YBCO) films was found to concur with previous experimental observation of preferred grain orientations for YBCO films deposited on various substrates such as (001) magnesium oxide (MgO) and (001) yttria stabilized zirconia (YSZ). The simulation has helped us to identify three factors influencing the competition of these [001] tilt boundaries. They are: (1) the relative depths of local minima in the boundary energy vs. misorientation curve, (2) the number of combinations of coincidence epitaxy (CE) orientations contributing to the exact misorientation for each of the high-angle-but-low-energy (HABLE) boundaries, and (3) the number of combinations of CE orientations within the angular ranges bracketing each of the exact HABLE boundaries. Hence, these factors can be applied to clarify the origin of special misorientations observed experimentally.

Growth of biaxially textured template layers using ion beam assisted deposition

NASA Astrophysics Data System (ADS)

Park, Seh-Jin

A two-step IBAD (ion beam assisted deposition) method is investigated, and compared to the conventional IBAD methods. The two step method uses surface energy anisotropy to achieve uniaxial texture and ion beam irradiation for biaxial texture. The biaxial texture was achieved by selective surface etching and enhanced by grain overgrowth. In this method, biaxial texture alignment is performed on a (001) uniaxially textured buffer layer. The material selected for achieving uniaxial texture, YBCO (YBa2Cu3O7-x), has strong surface energy anisotropy. YBCO is chemically susceptible to the reaction with the adjacent layer. Yttria stabilized zirconia (YSZ) was used to prevent the reaction between YBCO and the substrates (polycrystalline Ni alloy [Hastelloy] and amorphous SiNx/Si). A SrTiO3 layer was deposited on the uniaxially textured YBCO layer to retard stoichiometry change with subsequent processing. STO is well lattice matched with YBCO. A top layer of Ni was then deposited. The Ni layer was used for studying the effect of grain overgrowth. The obtained uniaxial Ni films were used for subsequent ion beam processing. Ar ion beam irradiation onto the uniaxially textured Ni film was used to study the effect of selective grain etching in achieving in-plane aligned Ni grains. Additional Ni deposition induces the overgrowth of the in-plane aligned Ni grains and, finally, the overall in-plane alignment. The in-plane alignment is examined with XRD phi scan. The effect of surface polarity of insulating oxide substrates on the epitaxial growth behavior was investigated. The lattice strain energy was the most important factor for determining the orientation of Ni films on a non-polar surface. However, for a polar surface, the surface energy plays an important role in determining the final orientation of the Ni films based on the experimental and theoretical results. Y2O3 growth behavior was also studied. The lattice strain energy is the most important factor for Y2O3 growth on single crystalline substrates. The surface energy anisotropy is the most important factor for the growth on amorphous substrates. The XRD phi scan study shows that Ar ion beam irradiation with favorable angle of incidence enhances the in-plane alignment of Y2O3 films grown on randomly oriented substrates due to the ion channeling.

Organic solar cells using a ZnO/Cu/ZnO anode deposited by ion beam sputtering at room temperature for flexible devices.

PubMed

El Hajj, Ahmad; Lucas, Bruno; Barbot, Anthony; Antony, Rémi; Ratier, Bernard; Aldissi, Matt

2013-07-01

The development of indium-free transparent conductive oxides (TCOs) on polymer substrates for flexible devices requires deposition at low temperatures and a limited thermal treatment. In this paper, we investigated the optical and electrical properties of ZnO/Cu/ZnO multi-layer electrodes obtained by ion beam sputtering at room temperature for flexible optoelectronic devices. This multilayer structure has the advantage of adjusting the layer thickness to favor antireflection and surface plasmon resonance of the metallic layer. We found that the optimal electrode is made up of a 10 nm-thick Cu layer between two 40 nm-thick ZnO layers, which results in a sheet resistance of 12 omega/(see symbol), a high transmittance of 85% in the visible range, and the highest figure of merit of 5.4 x 10(-3) (see symbol)/omega. A P3HT:PCBM-based solar cell showed a power conversion efficiency (PCE) of 2.26% using the optimized ZnO (40 nm)/Cu (10 nm)/ZnO (40 nm) anode.

Interface influence on the properties of Co90Fe10 films on soft magnetic underlayers - Magnetostrictive and Mössbauer spectrometry studies

NASA Astrophysics Data System (ADS)

Szumiata, Tadeusz; Gzik-Szumiata, Małgorzata; Brzózka, Katarzyna; Górka, Bogumił; Gawroński, Michał; Caruana Finkel, Anastasia; Reeves-McLaren, Nik; Morley, Nicola A.

2016-03-01

The main aim of the work was to show the correlation between magnetostrictive properties and microstructure of 25 nm thick Co90Fe10 films deposited on soft magnetic underlayers. A special attention was paid to the role of the interface region. In the case of Co90Fe10 on 25 nm and 35 nm thick METGLAS underlayers one can resolve in conversion electron Mössbauer spectra two hyperfine field distributions (high-field and medium-field ones) corresponding to both constituents of bilayers. Analogical distributions describe the spectra of Co90Fe10 on 25 nm and 35 nm thick Ni81Fe19 underlayers, however an additional low-field, smeared component has been observed. It has been attributed to the interface layer (of partially disordered structure) between magnetostrictive layer and soft magnetic layer. Such interpretation is backed up by the obtained strong correlation between mean hyperfine field value and magnetostriction constant of the films. The investigated bilayers are good candidates for MRAM devices.

Spin-scattering rates in metallic thin films measured by ferromagnetic resonance damping enhanced by spin-pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boone, C. T.; Shaw, J. M.; Nembach, H. T.

2015-06-14

We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses. The increase in damping with NM thickness depends strongly on both the spin- and charge-transport properties of the NM, as modeled by diffusion equations that include both momentum- and spin-scattering parameters. We use the analytical solution to the spin-diffusion equations to obtain spin-diffusion lengths for Pt and Pd. By measuring the dependence of conductivity on NM thickness, we correlate the charge- and spin-transport parameters, and validate the applicabilitymore » of various models for momentum-scattering and spin-scattering rates in these systems: constant, inverse-proportional (Dyakanov-Perel), and linear-proportional (Elliot-Yafet). We confirm previous reports that the spin-scattering time appears to be shorter than the momentum scattering time in Pt, and the Dyakanov-Perel-like model is the best fit to the data.« less

Size-Independent Exciton Localization Efficiency in Colloidal CdSe/CdS Core/Crown Nanosheet Type-I Heterostructures.

PubMed

Li, Qiuyang; Wu, Kaifeng; Chen, Jinquan; Chen, Zheyuan; McBride, James R; Lian, Tianquan

2016-03-22

CdSe/CdS core/crown nanoplatelet type I heterostructures are a class of two-dimensional materials with atomically precise thickness and many potential optoelectronic applications. It remains unclear how the precise thickness and lack of energy disorder affect the properties of exciton transport in these materials. By steady-state photoluminescence excitation spectroscopy and ultrafast transient absorption spectroscopy, we show that in five CdSe/CdS core/crown structures with the same core and increasing crown size (with thickness of ∼1.8 nm, width of ∼11 nm, and length from 20 to 40 nm), the crown-to-core exciton localization efficiency is independent of crown size and increases with photon energy above the band edge (from 70% at 400 nm to ∼100% at 370 nm), while the localization time increases with the crown size. These observations can be understood by a model that accounts for the competition of in-plane exciton diffusion and selective hole trapping at the core/crown interface. Our findings suggest that the exciton localization efficiency can be further improved by reducing interfacial defects.

Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

PubMed Central

Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

2015-01-01

We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com

2016-05-23

Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively.more » At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, S.; Li, N.; Maeder, X.

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Effect of shell thickness on the exchange bias blocking temperature and coercivity in Co-CoO core-shell nanoparticles

NASA Astrophysics Data System (ADS)

Thomas, S.; Reethu, K.; Thanveer, T.; Myint, M. T. Z.; Al-Harthi, S. H.

2017-08-01

The exchange bias blocking temperature distribution of naturally oxidized Co-CoO core-shell nanoparticles exhibits two distinct signatures. These are associated with the existence of two magnetic entities which are responsible for the temperature dependence of an exchange bias field. One is from the CoO grains which undergo thermally activated magnetization reversal. The other is from the disordered spins at the Co-CoO interface which exhibits spin-glass-like behavior. We investigated the oxide shell thickness dependence of the exchange bias effect. For particles with a 3 nm thick CoO shell, the predominant contribution to the temperature dependence of exchange bias is the interfacial spin-glass layer. On increasing the shell thickness to 4 nm, the contribution from the spin-glass layer decreases, while upholding the antiferromagnetic grain contribution. For samples with a 4 nm CoO shell, the exchange bias training was minimal. On the other hand, 3 nm samples exhibited both the training effect and a peak in coercivity at an intermediate set temperature Ta. This is explained using a magnetic core-shell model including disordered spins at the interface.

Chemically Deposited CdS Buffer/Kesterite Cu2ZnSnS4 Solar Cells: Relationship between CdS Thickness and Device Performance.

PubMed

Hong, Chang Woo; Shin, Seung Wook; Suryawanshi, Mahesh P; Gang, Myeng Gil; Heo, Jaeyeong; Kim, Jin Hyeok

2017-10-25

Earth-abundant, copper-zinc-tin-sulfide (CZTS), kesterite, is an attractive absorber material for thin-film solar cells (TFSCs). However, the open-circuit voltage deficit (V oc -deficit) resulting from a high recombination rate at the buffer/absorber interface is one of the major challenges that must be overcome to improve the performance of kesterite-based TFSCs. In this paper, we demonstrate the relationship between device parameters and performances for chemically deposited CdS buffer/CZTS-based heterojunction TFSCs as a function of buffer layer thickness, which could change the CdS/CZTS interface conditions such as conduction band or valence band offsets, to gain deeper insight and understanding about the V oc -deficit behavior from a high recombination rate at the CdS buffer/kesterite interface. Experimental results show that device parameters and performances are strongly dependent on the CdS buffer thickness. We postulate two meaningful consequences: (i) Device parameters were improved up to a CdS buffer thickness of 70 nm, whereas they deteriorated at a thicker CdS buffer layer. The V oc -deficit in the solar cells improved up to a CdS buffer thickness of 92 nm and then deteriorated at a thicker CdS buffer layer. (ii) The minimum values of the device parameters were obtained at 70 nm CdS thickness in the CZTS TFSCs. Finally, the highest conversion efficiency of 8.77% (V oc : 494 mV, J sc : 34.54 mA/cm 2 , and FF: 51%) is obtained by applying a 70 nm thick CdS buffer to the Cu 2 ZnSn(S,Se) 4 absorber layer.

Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

NASA Astrophysics Data System (ADS)

Look, David C.; Leedy, Kevin D.; Kiefer, Arnold; Claflin, Bruce; Itagaki, Naho; Matsushima, Koichi; Surhariadi, Iping

2013-03-01

The dependences of the 294 and 10 K mobility μ and volume carrier concentration n on thickness (d=25 to 147 nm) are examined in aluminum-doped zinc oxide (AZO). Two AZO layers are grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer. Plots of the 10 K sheet concentration ns versus d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n=8.36×1020 and 8.32×1020 cm-3, but different x-axis intercepts, δd=-4 and +13 nm, respectively. Plots of ns versus d at 294 K produce substantially the same results. Plots of μ versus d can be well fitted with the equation μ(d)=μ(∞)/[1+d*/(d-δd)], where d* is the thickness for which μ(∞) is reduced by a factor 2. For the B and UB samples, d*=7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(∞) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23×1021 cm-3 and 1.95×1020 cm-3, respectively, and Drude theory to predict a plasmonic resonance at 1.34 μm. The latter is confirmed by reflectance measurements.

Spin-valve Josephson junctions for cryogenic memory

NASA Astrophysics Data System (ADS)

Niedzielski, Bethany M.; Bertus, T. J.; Glick, Joseph A.; Loloee, R.; Pratt, W. P.; Birge, Norman O.

2018-01-01

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and π by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the superconducting quantum interference device (SQUID) used for phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a "phase diagram" for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

Human Tau Isoforms Assemble into Ribbon-like Fibrils That Display Polymorphic Structure and Stability*

PubMed Central

Wegmann, Susanne; Jung, Yu Jin; Chinnathambi, Subashchandrabose; Mandelkow, Eva-Maria; Mandelkow, Eckhard; Muller, Daniel J.

2010-01-01

Fibrous aggregates of Tau protein are characteristic features of Alzheimer disease. We applied high resolution atomic force and EM microscopy to study fibrils assembled from different human Tau isoforms and domains. All fibrils reveal structural polymorphism; the “thin twisted” and “thin smooth” fibrils resemble flat ribbons (cross-section ∼10 × 15 nm) with diverse twist periodicities. “Thick fibrils” show periodicities of ∼65–70 nm and thicknesses of ∼9–18 nm such as routinely reported for “paired helical filaments” but structurally resemble heavily twisted ribbons. Therefore, thin and thick fibrils assembled from different human Tau isoforms challenge current structural models of paired helical filaments. Furthermore, all Tau fibrils reveal axial subperiodicities of ∼17–19 nm and, upon exposure to mechanical stress or hydrophobic surfaces, disassemble into uniform fragments that remain connected by thin thread-like structures (∼2 nm). This hydrophobically induced disassembly is inhibited at enhanced electrolyte concentrations, indicating that the fragments resemble structural building blocks and the fibril integrity depends largely on hydrophobic and electrostatic interactions. Because full-length Tau and repeat domain constructs assemble into fibrils of similar thickness, the “fuzzy coat” of Tau protein termini surrounding the fibril axis is nearly invisible for atomic force microscopy and EM, presumably because of its high flexibility. PMID:20566652

Effect of film thickness on NO2 gas sensing properties of sprayed orthorhombic nanocrystalline V2O5 thin films

NASA Astrophysics Data System (ADS)

Mane, A. A.; Moholkar, A. V.

2017-09-01

The nanocrystalline V2O5 thin films with different thicknesses have been grown onto the glass substrates using chemical spray pyrolysis (CSP) deposition method. The XRD study shows that the films exhibit an orthorhombic crystal structure. The narrow scan X-ray photoelectron spectrum of V-2p core level doublet gives the binding energy difference of 7.3 eV, indicating that the V5+ oxidation state of vanadium. The FE-SEM micrographs show the formation of nanorods-like morphology. The AFM micrographs show the high surface area to volume ratio of nanocrystalline V2O5 thin films. The optical study gives the band gap energy values of 2.41 eV, 2.44 eV, 2.47 eV and 2.38 eV for V2O5 thin films deposited with the thicknesses of 423 nm, 559 nm, 694 nm and 730 nm, respectively. The V2O5 film of thickness 559 nm shows the NO2 gas response of 41% for 100 ppm concentration at operating temperature of 200 °C with response and recovery times of 20 s and 150 s, respectively. Further, it shows the rapid response and reproducibility towards 10 ppm NO2 gas concentration at 200 °C. Finally, NO2 gas sensing mechanism based on chemisorption process is discussed.

Numerical study of the light output intensity of the bilayer organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lu, Feiping

2017-02-01

The structure of organic light-emitting diodes (OLEDs) is one of most important issues that influence the light output intensity (LOI) of OLEDs. In this paper, based on a simple but accurate optical model, the influences of hole and electron transport layer thickness on the LOI of bilayer OLEDs, which with N,N0- bis(naphthalen-1-yl)-N,N0- bis(phenyl)- benzidine (NPB) or N,N'- diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4-diamine (TPD) as hole transport layer, with tris(8-hydroxyquinoline) aluminum (Alq3) as electron transport and light emitting layers, were investigated. The laws of LOI for OLEDs under different organic layer thickness values were obtained. The results show that the LOI of devices varies in accordance with damped cosine or sine function as the increasing of organic layer thickness, and the results show that the bilayer OLEDs with the structure of Glass/ITO/NPB (55 nm)/Alq3 (75 nm)/Al and Glass/ITO/TPB (60 nm)/Alq3 (75 nm)/Al have most largest LOI. When the thickness of Alq3 is less than 105 nm, the OLEDs with TPD as hole transport layer have larger LOI than that with NPB as hole transport layer. The results obtained in this paper can present an in-depth understanding of the working mechanism of OLEDs and help ones fabricate high efficiency OLEDs.

Adsorbed water and thin liquid films on Mars

NASA Astrophysics Data System (ADS)

Boxe, C. S.; Hand, K. P.; Nealson, K. H.; Yung, Y. L.; Yen, A. S.; Saiz-Lopez, A.

2012-07-01

At present, bulk liquid water on the surface and near-subsurface of Mars does not exist due to the scarcity of condensed- and gas-phase water, pressure and temperature constraints. Given that the nuclei of soil and ice, that is, the soil solid and ice lattice, respectively, are coated with adsorbed and/or thin liquid films of water well below 273 K and the availability of water limits biological activity, we quantify lower and upper limits for the thickness of such adsorbed/water films on the surface of the Martian regolith and for subsurface ice. These limits were calculated based on experimental and theoretical data for pure water ice and water ice containing impurities, where water ice containing impurities exhibit thin liquid film enhancements, ranging from 3 to 90. Close to the cold limit of water stability (i.e. 273 K), thin liquid film thicknesses at the surface of the Martian regolith is 0.06 nm (pure water ice) and ranges from 0.2 to 5 nm (water ice with impurities). An adsorbed water layer of 0.06 nm implies a dessicated surface as the thickness of one monolayer of water is 0.3 nm but represents 0.001-0.02% of the Martian atmospheric water vapour inventory. Taking into account the specific surface area (SSA) of surface-soil (i.e. top 1 mm of regolith and 0.06 nm adsorbed water layer), shows Martian surface-soil may contain interfacial water that represents 6-66% of the upper- and lower-limit atmospheric water vapour inventory and almost four times and 33%, the lower- and upper-limit Martian atmospheric water vapour inventory. Similarly, taking the SSA of Martian soil, the top 1 mm or regolith at 5 nm thin liquid water thickness, yields 1.10×1013 and 6.50×1013 litres of waters, respectively, 55-325 times larger than Mars' atmospheric water vapour inventory. Film thicknesses of 0.2 and 5 nm represent 2.3×104-1.5×106 litres of water, which is 6.0×10-7-4.0×10-4%, respectively, of a 10 pr μm water vapour column, and 3.0×10-6-4.0×10-4% and 6.0×10-6-8.0×10-4%, respectively, of the Martian atmospheric water vapour inventory. Thin liquid film thicknesses on/in subsurface ice were investigated via two scenarios: (i) under the idealistic case where it is assumed that the diurnal thermal wave is equal to the temperature of ice tens of centimetres below the surface, allowing for such ice to experience temperatures close to 273 K and (ii) under the, likely, realistic scenario where the diurnal thermal wave allows for the maximum subsurface ice temperature of 235 K at 1 m depth between 30°N and 30°S. Scenario 1 yields thin liquid film thicknesses ranging from 11 to 90 nm; these amounts represent 4×106-3.0×107 litres of water. For pure water ice, Scenario 2 reveals that the thickness of thin liquid films contained on/within Martian subsurface is less than 1.2 nm, several molecular layers thick. Conversely, via the effect of impurities at 235 K allows for a thin liquid film thickness on/within subsurface ice of 0.5 nm, corresponding to 6.0×104 litres of water. The existence of thin films on Mars is supported by data from the Mars Exploration Rovers (MERs) Spirit and Opportunity's Alpha Proton X-ray Spectrometer instrumentation, which have detected increased levels of bromine beneath the immediate surface, suggestive of the mobilization of soluble salts by thin films of liquid water towards local cold traps. These findings show that biological activity on the Martian surface and subsurface is not limited by nanometre dimensions of available water.

The influence of nanoscopically thin silver films on bacterial viability and attachment.

PubMed

Ivanova, Elena P; Hasan, Jafar; Truong, Vi Khanh; Wang, James Y; Raveggi, Massimo; Fluke, Christopher; Crawford, Russell J

2011-08-01

The physicochemical and bactericidal properties of thin silver films have been analysed. Silver films of 3 and 150 nm thicknesses were fabricated using a magnetron sputtering thin-film deposition system. X-ray photoelectron and energy dispersive X-ray spectroscopy and atomic force microscopy analyses confirmed that the resulting surfaces were homogeneous, and that silver was the most abundant element present on both surfaces, being 45 and 53 at.% on the 3- and 150-nm films, respectively. Inductively coupled plasma time of flight mass spectroscopy (ICP-TOF-MS) was used to measure the concentration of silver ions released from these films. Concentrations of 0.9 and 5.2 ppb were detected for the 3- and 150-nm films, respectively. The surface wettability of the films remained nearly identical for both film thicknesses, displaying a static water contact angle of 95°, while the surface free energy of the 150-nm film was found to be slightly greater than that of the 3-nm film, being 28.8 and 23.9 mN m(-1), respectively. The two silver film thicknesses exhibited statistically significant differences in surface topographic profiles on the nanoscopic scale, with R (a), R (q) and R (max) values of 1.4, 1.8 and 15.4 nm for the 3-nm film and 0.8, 1.2 and 10.7 nm for the 150-nm film over a 5 × 5 μm scanning area. Confocal scanning laser microscopy and scanning electron microscopy revealed that the bactericidal activity of the 3-nm silver film was not significant, whereas the nanoscopically smoother 150-nm silver film exhibited appreciable bactericidal activity towards Pseudomonas aeruginosa ATCC 9027 cells and Staphylococcus aureus CIP 65.8 cells, obtaining up to 75% and 27% sterilisation effect, respectively.

Fluorescence lifetime, dipole orientation and bilayer polymer films

NASA Astrophysics Data System (ADS)

Ho, Xuan Long; Chen, Po-Jui; Woon, Wei-Yen; White, Jonathon David

2017-10-01

Bilayer films consisting of the optically transparent polymers, polystyrene (PS) and poly(methyl methacrylate) (PMMA) were spin-cast on glass substrates. The upper 13.5 nm layer (PS) was lightly doped with Rhodamine-6 G (RH6G) or MEH-PPV. While the fluorescence of MEH-PPV was independent of PMMA thickness, the lifetime of RH6G increased 3-fold as the underlying PMMA thickness increased from 0 to 500 nm while the collected flux decreased suggesting a reorientation of the smaller molecule's dipole with respect to the air-polymer interface with PMMA thickness. This suggests lifetime may find application for nondestructive thickness measurements of transparent films with sub-micron lateral resolution and large range.

Hf thickness dependence of spin-orbit torques in Hf/CoFeB/MgO heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramaswamy, Rajagopalan; Qiu, Xuepeng; Dutta, Tanmay

We have studied the spin-orbit torques in perpendicularly magnetized Hf/CoFeB/MgO system, by systematically varying the thickness of Hf underlayer. We have observed a sign change of effective fields between Hf thicknesses of 1.75 and 2 nm, indicating that competing mechanisms, such as the Rashba and spin Hall effects, contribute to spin-orbit torques in our system. For larger Hf thicknesses (>2 nm), both the components of spin-orbit torques arise predominantly from the bulk spin Hall effect. We have also confirmed these results using spin-orbit torque induced magnetization switching measurements. Our results could be helpful in designing Hf based SOT devices.

Analysis of reflectance spectra of UV-absorbing aerosol scenes measured by SCIAMACHY

NASA Astrophysics Data System (ADS)

de Graaf, M.; Stammes, P.; Aben, E. A. A.

2007-01-01

Reflectance spectra from 280-1750 nm of typical desert dust aerosol (DDA) and biomass burning aerosol (BBA) scenes over oceans are presented, measured by the space-borne spectrometer Scanning Imaging Absorption Spectrometer for Atmospheric Chartography (SCIAMACHY). DDA and BBA are both UV-absorbing aerosols, but their effect on the top-of-atmosphere (TOA) reflectance is different due to differences in the way mineral aerosols and smoke reflect and absorb radiation. Mineral aerosols are typically large, inert particles, found in warm, dry continental air. Smoke particles, on the other hand, are usually small particles, although often clustered, chemically very active and highly variable in composition. Moreover, BBA are hygroscopic and over oceans BBA were invariably found in cloudy scenes. TOA reflectance spectra of typical DDA and BBA scenes were analyzed, using radiative transfer simulations, and compared. The DDA spectrum was successfully simulated using a layer with a bimodal size distribution of mineral aerosols in a clear sky. The spectrum of the BBA scene, however, was determined by the interaction between cloud droplets and smoke particles, as is shown by simulations with a model of separate aerosol and cloud layers and models with internally and externally mixed aerosol/cloud layers. The occurrence of clouds in smoke scenes when sufficient water vapor is present usually prevents the detection of optical properties of these aerosol plumes using space-borne sensors. However, the Absorbing Aerosol Index (AAI), a UV color index, is not sensitive to scattering aerosols and clouds and can be used to detect these otherwise obscured aerosol plumes over clouds. The amount of absorption of radiation can be expressed using the absorption optical thickness. The absorption optical thickness in the DDA case was 0.42 (340 nm) and 0.14 (550 nm) for an aerosol layer of optical thickness 1.74 (550 nm). In the BBA case the absorption optical thickness was 0.18 (340 nm) and 0.10 (550 nm) for an aerosol/cloud layer of optical thickness 20.0 (550 nm). However, this reduced the cloud albedo by about 0.2 (340 nm) and 0.15 (550 nm). This method can be an important tool to estimate the global impact of absorption of shortwave radiation by smoke and industrial aerosols inside clouds.

Optical properties of amorphous SiO2-TiO2 multi-nanolayered coatings for 1064-nm mirror technology

NASA Astrophysics Data System (ADS)

Magnozzi, M.; Terreni, S.; Anghinolfi, L.; Uttiya, S.; Carnasciali, M. M.; Gemme, G.; Neri, M.; Principe, M.; Pinto, I.; Kuo, L.-C.; Chao, S.; Canepa, M.

2018-01-01

The use of amorphous, SiO2-TiO2 nanolayered coatings has been proposed recently for the mirrors of 3rd-generation interferometric detectors of gravitational waves, to be operated at low temperature. Coatings with a high number of low-high index sub-units pairs with nanoscale thickness were found to preserve the amorphous structure for high annealing temperatures, a key factor to improve the mechanical quality of the mirrors. The optimization of mirror designs based on such coatings requires a detailed knowledge of the optical properties of sub-units at the nm-thick scale. To this aim we have performed a Spectroscopic Ellipsometry (SE) study of amorphous SiO2-TiO2 nanolayered films deposited on Si wafers by Ion Beam Sputtering (IBS). We have analyzed films that are composed of 5 and 19 nanolayers (NL5 and NL19 samples) and have total optical thickness nominally equivalent to a quarter of wavelength at 1064 nm. A set of reference optical properties for the constituent materials was obtained by the analysis of thicker SiO2 and TiO2 homogeneous films (∼ 120 nm) deposited by the same IBS facility. By flanking SE with ancillary techniques, such as TEM and AFM, we built optical models that allowed us to retrieve the broad-band (250-1700 nm) optical properties of the nanolayers in the NL5 and NL19 composite films. In the models which provided the best agreement between simulation and data, the thickness of each sub-unit was fitted within rather narrow bounds determined by the analysis of TEM measurements on witness samples. Regarding the NL5 sample, with thickness of 19.9 nm and 27.1 nm for SiO2 and TiO2 sub-units, respectively, the optical properties presented limited variations with respect to the thin film counterparts. For the NL19 sample, which is composed of ultrathin sub-units (4.4 nm and 8.4 nm for SiO2 and TiO2, respectively) we observed a significant decrease of the IR refraction index for both types of sub-units; this points to a lesser mass density with respect to the thin film reference. The results are discussed in the light of the existing literature on nanofilms of amorphous oxides.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

2016-06-01

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility ( μ H) of 50.1 cm2/Vs with a carrier concentration ( N) of 2.55 × 1020 cm-3. Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm2/Vs with an N of 2.22 × 1020 cm-3.

Graphene based resonance structure to enhance the optical pressure between two planar surfaces.

PubMed

Hassanzadeh, Abdollah; Azami, Darya

2015-12-28

To enhance the optical pressure on a thin dielectric sample, a resonance structure using graphene layers coated over a metal film on a high index prism sputtered with MgF2 was theoretically analyzed. The number of graphene layers and the thicknesses of metal and MgF2 films were optimized to achieve the highest optical pressure on the sample. Effects of three different types of metals on the optical pressure were investigated numerically. In addition, simulations were carried out for samples with various thicknesses. Our numerical results show that the optical pressure increased by more than five orders of magnitude compared to the conventional metal-film-base resonance structure. The highest optical pressure was obtained for 10 layers of graphene deposited on 29-nm thick Au film and 650 nm thickness of MgF2 at 633nm wavelength, The proposed graphene based resonance structure can open new possibilities for optical tweezers, nanomechnical devices and surface plasmon based sensing and imaging techniques.

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Qingliu; Shi, Bing; Bareño, Javier

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitablemore » in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.« less

Shape induced magnetic vortex state in hexagonal ordered cofe nanodot arrays using ultrathin alumina shadow mask

NASA Astrophysics Data System (ADS)

Sellarajan, B.; Saravanan, P.; Ghosh, S. K.; Nagaraja, H. S.; Barshilia, Harish C.; Chowdhury, P.

2018-04-01

The magnetization reversal process of hexagonal ordered CoFe nanodot arrays was investigated as a function of nanodot thickness (td) varying from 10 to 30 nm with fixed diameter. For this purpose, ordered CoFe nanodots with a diameter of 80 ± 4 nm were grown by sputtering using ultra-thin alumina mask. The vortex annihilation and the dynamic spin configuration in the ordered CoFe nanodots were analyzed by means of magnetic hysteresis loops in complement with the micromagnetic simulation studies. A highly pinched hysteresis loop observed at 20 nm thickness suggests the occurrence of vortex state in these nanodots. With increase in dot thickness from 10 to 30 nm, the estimated coercivity values tend to increase from 80 to 175 Oe, indicating irreversible change in the nucleation/annihilation field of vortex state. The measured magnetic properties were then corroborated with the change in the shape of the nanodots from disk to hemisphere through micromagnetic simulation.

Irradiation effects on multilayered W/ZrO2 film under 4 MeV Au ions

NASA Astrophysics Data System (ADS)

Wang, Hongwei; Gao, Yuan; Fu, Engang; Yang, Tengfei; Xue, Jianming; Yan, Sha; Chu, Paul K.; Wang, Yugang

2014-12-01

Irradiation induced structural changes in multilayered W/ZrO2 nanocomposites with periodic bilayer thicknesses of (7/14 nm) and (70/140 nm) were investigated following Au+ ion irradiation. The samples were irradiated by 4 MeV Au ions with fluences ranging from 6 × 1014 to 1 × 1016 ions/cm2. The immiscible W/ZrO2 interfaces remained unchanged without intermixing of the layers upon the irradiation. No voids were observed in the samples with different periodic layer thicknesses. The XRD and XTEM studies reveal thickness dependent microstructural changes in the samples. W and ZrO2 grains in the thinner (7/14 nm) bilayer sample exhibit significant resistance to grain growth compared to the thicker (70/140 nm) bilayer sample as well as a W monolayer film. The high fraction of flat interfaces as well as grain boundaries in multilayer films plays a role in suppressing ion irradiation-induced grain growth and void formation.

Narrowing of band gap at source/drain contact scheme of nanoscale InAs-nMOS

NASA Astrophysics Data System (ADS)

Mohamed, A. H.; Oxland, R.; Aldegunde, M.; Hepplestone, S. P.; Sushko, P. V.; Kalna, K.

2018-04-01

A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1 × 1016 cm-3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rsh = 90.9 Ω/sq which is in a good agreement with an experimental value of 97 Ω/sq.

In-plane microwave dielectric properties of paraelectric barium strontium titanate thin films with anisotropic epitaxy

NASA Astrophysics Data System (ADS)

Simon, W. K.; Akdogan, E. K.; Safari, A.; Bellotti, J. A.

2005-08-01

In-plane dielectric properties of ⟨110⟩ oriented epitaxial (Ba0.60Sr0.40)TiO3 thin films in the thickness range from 25-1200nm have been investigated under the influence of anisotropic epitaxial strains from ⟨100⟩ NdGaO3 substrates. The measured dielectric properties show strong residual strain and in-plane directional dependence. Below 150nm film thickness, there appears to be a phase transition due to the anisotropic nature of the misfit strain relaxation. In-plane relative permittivity is found to vary from as much as 500-150 along [11¯0] and [001] respectively, in 600nm thick films, and from 75 to 500 overall. Tunability was found to vary from as much as 54% to 20% in all films and directions, and in a given film the best tunability is observed along the compressed axis in a mixed strain state, 54% along [11¯0] in the 600nm film for example.

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

NASA Astrophysics Data System (ADS)

Schüffelgen, Peter; Rosenbach, Daniel; Neumann, Elmar; Stehno, Martin P.; Lanius, Martin; Zhao, Jialin; Wang, Meng; Sheehan, Brendan; Schmidt, Michael; Gao, Bo; Brinkman, Alexander; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev

2017-11-01

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3-4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

NASA Astrophysics Data System (ADS)

Kim, Si Joon; Mohan, Jaidah; Lee, Jaebeom; Lee, Joy S.; Lucero, Antonio T.; Young, Chadwin D.; Colombo, Luigi; Summerfelt, Scott R.; San, Tamer; Kim, Jiyoung

2018-04-01

We report on the effect of the Hf0.5Zr0.5O2 (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 °C for 1 min in a nitrogen ambient to be compatible with the back-end of the line thermal budget. As the HZO film thickness decreases, low-voltage operation (1.0 V or less) can be achieved without the dead layer effect, although switching polarization (Psw) tends to decrease due to the smaller grain size. Meanwhile, for 20-nm-thick HZO films prepared under the identical stress (similar TiN top electrode thickness and thermal budget), the Psw and dielectric constant are reduced because of additional monoclinic phase formation.

Wide Bandgap Transparent Conducting Electrode of FTO/Ag/FTO Structure for Ultraviolet Light-Emitting Diodes.

PubMed

Yohn, Gyu-Jae; Jeong, Soae; Kang, Soo-Hyun; Kim, Si-Won; Noh, Beom-Rae; Oh, Semi; Jeong, Bong-Yong; Kim, Kyoung-Kook

2018-09-01

We investigated the effect of the Ag interlayer thickness on the structural, electrical and optical properties of FTO/Ag/FTO structures designed for use in wide bandgap transparent conducting electrodes. The top and bottom FTO layers were deposited on α-Al2O3 (0001) substrates via RF magnetron sputtering at 300 °C and Ag interlayers were deposited using an e-beam evaporator system. We optimized the figure of merit by changing the thickness of the inserted Ag interlayer from 10 nm to 14 nm, achieving a maximum value of 2.46 × 10-3 Ω-1 and a resistivity of 6.4 × 10-4 Ω · cm using an FTO (70 nm)/Ag (14 nm)/FTO (40 nm) structure. Furthermore, the average optical transmittance in the deep UV range (300 to 330 nm) was 82.8%.

Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer.

PubMed

Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi

2016-02-15

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that εr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10(-) nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

NASA Astrophysics Data System (ADS)

Liu, Wen-Feng; Zhang, Min-Gang; Zhang, Ke-Wei; Zhang, Hai-Jie; Xu, Xiao-Hong; Chai, Yue-Sheng

2016-11-01

Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. Program supported by the National Natural Science Foundation of China (Grant No. 51305290), the Higher Education Technical Innovation Project of Shanxi Province, China (Grant No. 2013133), the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals of Shanxi Province, China (Grant No. 2015003), and the Program for the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

The design of broad band anti-reflection coatings for solar cell applications

NASA Astrophysics Data System (ADS)

Siva Rama Krishna, Angirekula; Sabat, Samrat Lagnajeet; Ghanashyam Krishna, Mamidipudi

2017-01-01

The design of broadband anti-reflection coatings (ARCs) for solar cell applications using multiobjective differential evolutionary (MODE) algorithms is reported. The effect of thickness and refractive index contrast within the layers of the ARC on the bandwidth of reflectance is investigated in detail. In the case of the hybrid plasmonic ARC structures the effect of size, shape and filling fraction of silver (Ag) nanoparticles on the reflectance is studied. Bandwidth is defined as the spectral region of wavelengths over which the reflectance is below 2%. Single, two and three layers ARCs (consisting of MgF2, Al2O3, Si3N4, TiO2 and ZnS or combinations of these materials) were simulated for performance evaluation on an a-Si photovoltaic cell. It is observed that the three layer ARC consisting of MgF2/Si3N4/TiO2(ZnTe) of 81/42/36 nm thicknesses, respectively, exhibited a weighted reflectance of 1.9% with a bandwidth of 450 nm over the wavelength range of 300-900 nm. The ARC bandwidth could be further improved by embedding randomly distributed Ag nanoparticles of size between 100 and 120 nm on a two layer ARC consisting of Al2O3/TiO2 with thickness of 42 nm and 56 nm respectively. This plasmon-dielectric hybrid ARC design exhibited a weighted reflectance of 0.6% with a bandwidth of 560 nm over the wavelength range of 300-900 nm.

Degradation of Polymer-Coated Materials

DTIC Science & Technology

2013-10-01

Al and Al - Cu alloy metallizations about 800 nm thick were deposited on glass substrates and...accumulation under corrosion resistant organic coatings. Al and Al - Cu alloy metallizations about 800 nm thick were deposited on glass substrates and then...exposed to salt spray chamber for 16 days. Figure 1.4.10 Images of corrosion sites in Al - Cu thin film at “As deposited ” condition under

Lifetime Fluorescence and Raman Imaging for Detection of Wound Failure and Heterotopic Ossification

DTIC Science & Technology

2015-12-01

containing ten bandpass filters ( Semrock Fluorescence filters) centered at: 407nm, 434 nm, 465 nm, 494 nm, 520 nm, 542 nm, 572 nm, 605 nm, 652 nm, 676 nm...meat (~2 - 3 mm thickness), and a bottom piece (~8 mm). The system was built around an 852 nm tunable narrow-band optical filter ( Semrock , LL01-852...optical filters to block light that falls outside the detection band: 785 nm notch filter ( Semrock , NF03-785E-25), and a bandpass filter at 842 nm

Surface modification of an amorphous Si thin film crystallized by a linearly polarized Nd:YAG pulse laser beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horita, Susumu; Kaki, Hirokazu; Nishioka, Kensuke

2007-07-01

Amorphous Si films of 60 and 10 nm thick on glass substrates were irradiated by a linearly polarized Nd:YAG pulse laser with the wavelength {lambda}=532 nm at the incident angle {theta}{sub i}=0. The surface of the irradiated 60-nm-thick film had both periodic ridges perpendicular to the electric field vector E and aperiodic ridges roughly parallel to E, where the spatial period of the periodic ridges was almost {lambda}. From the continuous 10-nm-thick film, the separate rectangular Si islands were formed with a periodic distance of {lambda}, with the edges parallel or perpendicular to E. When {theta}{sub i} was increased frommore » normal incidence of the s-polarized beam for a 60-nm-thick film, the aperiodic ridges were reduced while the periodic ridges were still formed. For a 10-nm-thick film, the Si stripes were formed perpendicular to E, using the s-polarized beam at {theta}{sub i}=12 deg. In order to investigate the mechanisms of the surface modifications of, in particular, aperiodic ridges, islands, and stripes, we improved the previous theoretical model of the periodic distribution of the beam energy density (periodic E-D) generated by irradiation of the linearly polarized laser beam, taking account of the multireflection effect in the Si film which is semitransparent for {lambda}. Further, the calculated E-D was corrected with respect to the thermal diffusion in the irradiated Si film. The calculation results show that the two-dimensional E-D consists of a constant or a dc term and a sinusoidal or an ac term which contains various spatial periods. The multireflection effect strongly influences the amplitude and phase of every ac term, which means that the amplitude and phase depend on the film thickness. The thermal diffusion during the heating of the irradiated film greatly reduces the amplitudes of the ac terms with periods below the thermal diffusion length. The theoretical calculation showed that, by increasing {theta}{sub i}, the temperature distribution in the irradiated Si film was changed from two-dimensional toward one-dimensional, which can explain the above experimental results reasonably.« less

Axial arrangement of the myosin rod in vertebrate thick filaments: immunoelectron microscopy with a monoclonal antibody to light meromyosin

PubMed Central

1985-01-01

A monoclonal antibody, MF20, which has been shown previously to bind the myosin heavy chain of vertebrate striated muscle, has been proven to bind the light meromyosin (LMM) fragment by solid phase radioimmune assay with alpha-chymotryptic digests of purified myosin. Epitope mapping by electron microscopy of rotary-shadowed, myosin-antibody complexes has localized the antibody binding site to LMM at a point approximately 92 nm from the C-terminus of the myosin heavy chain. Since this epitope in native thick filaments is accessible to monoclonal antibodies, we used this antibody as a high affinity ligand to analyze the packing of LMM along the backbone of the thick filament. By immunofluorescence microscopy, MF20 was shown to bind along the entire A-band of chicken pectoralis myofibrils, although the epitope accessibility was greater near the ends than at the center of the A- bands. Thin-section, transmission electron microscopy of myofibrils decorated with MF20 revealed 50 regularly spaced, cross-striations in each half A-band, with a repeat distance of approximately 13 nm. These were numbered consecutively, 1-50, from the A-band to the last stripe, approximately 68 nm from the filament tips. These same striations could be visualized by negative staining of native thick filaments labeled with MF20. All 50 striations were of a consecutive, uninterrupted repeat which approximated the 14-15-nm axial translation of cross- bridges. Each half M-region contained five MF20 striations (approximately 13 nm apart) with a distance between stripes 1 and 1', on each half of the bare zone, of approximately 18 nm. This is compatible with a packing model with full, antiparallel overlap of the myosin rods in the bare zone region. Differences in the spacings measured with negatively stained myofilaments and thin-sectioned myofibrils have been shown to arise from specimen shrinkage in the fixed and embedded preparations. These observations provide strong support for Huxley's original proposal for myosin packing in thick filaments of vertebrate muscle (Huxley, H. E., 1963, J. Mol. Biol., 7:281-308) and, for the first time, directly demonstrate that the 14-15- nm axial translation of LMM in the thick filament backbone corresponds to the cross-bridge repeat detected with x-ray diffraction of living muscle. PMID:3897243

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation

NASA Astrophysics Data System (ADS)

Jin, Kuijuan; Wang, Jiesu; Gu, Junxing; L03 Group in Institute of Physics, Chinese Academy of Sciences Team

BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/ χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films. email: kjjin@iphy.ac.cn

Optimization of the antireflection coating of thin epitaxial crystalline silicon solar cells

DOE PAGES

Selj, Josefine K.; Young, David; Grover, Sachit

2015-08-28

In this study we use an effective weighting function to include the internal quantum efficiency (IQE) and the effective thickness, Te, of the active cell layer in the optical modeling of the antireflection coating (ARC) of very thin crystalline silicon solar cells. The spectrum transmitted through the ARC is hence optimized for efficient use in the given cell structure and the solar cell performance can be improved. For a 2-μm thick crystalline silicon heterojunction solar cell the optimal thickness of the Indium Tin Oxide (ITO) ARC is reduced by ~8 nm when IQE data and effective thickness are taken intomore » account compared to the standard ARC optimization, using the AM1.5 spectrum only. The reduced ARC thickness will shift the reflectance minima towards shorter wavelengths and hence better match the absorption of very thin cells, where the short wavelength range of the spectrum is relatively more important than the long, weakly absorbed wavelengths. For this cell, we find that the optimal thickness of the ITO starts at 63 nm for very thin (1 μm) active Si layer and then increase with increasing T e until it saturates at 71 nm for T e > 30 μm.« less

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Harsha, Cirandur Sri; Reddy, V. Rajagopal; Lee, Sung-Nam; Won, Jonghan; Choi, Chel-Jong

2018-02-01

Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I-V, Cheung's and Norde's methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I-V and C-V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation.

PubMed

Wang, Jie-Su; Jin, Kui-Juan; Guo, Hai-Zhong; Gu, Jun-Xing; Wan, Qian; He, Xu; Li, Xiao-Long; Xu, Xiu-Lai; Yang, Guo-Zhen

2016-12-01

BiFeO 3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO 3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO 3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO 3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO 3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO 3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ 31 /χ 15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO 3 thin films.

Evolution of structural distortion in BiFeO3 thin films probed by second-harmonic generation

PubMed Central

Wang, Jie-su; Jin, Kui-juan; Guo, Hai-zhong; Gu, Jun-xing; Wan, Qian; He, Xu; Li, Xiao-long; Xu, Xiu-lai; Yang, Guo-zhen

2016-01-01

BiFeO3 thin films have drawn much attention due to its potential applications for novel magnetoelectric devices and fundamental physics in magnetoelectric coupling. However, the structural evolution of BiFeO3 films with thickness remains controversial. Here we use an optical second-harmonic generation technique to explore the phase-related symmetry evolution of BiFeO3 thin films with the variation of thickness. The crystalline structures for 60 and 180-nm-thick BiFeO3 thin films were characterized by high-resolution X-ray diffractometry reciprocal space mapping and the local piezoelectric response for 60-nm-thick BiFeO3 thin films was characterized by piezoresponse force microscopy. The present results show that the symmetry of BiFeO3 thin films with a thickness below 60 nm belongs to the point group 4 mm. We conclude that the disappearance of fourfold rotational symmetry in SHG s-out pattern implies for the appearance of R-phase. The fact that the thinner the film is, the closer to 1 the tensor element ratio χ31/χ15 tends, indicates an increase of symmetry with the decrease of thickness for BiFeO3 thin films. PMID:27905565

Shell Layer Thickness-Dependent Photocatalytic Activity of Sputtering Synthesized Hexagonally Structured ZnO-ZnS Composite Nanorods

PubMed Central

Liang, Yuan-Chang; Lo, Ya-Ru; Wang, Chein-Chung; Xu, Nian-Cih

2018-01-01

ZnO-ZnS core-shell nanorods are synthesized by combining the hydrothermal method and vacuum sputtering. The core-shell nanorods with variable ZnS shell thickness (7–46 nm) are synthesized by varying ZnS sputtering duration. Structural analyses demonstrated that the as-grown ZnS shell layers are well crystallized with preferring growth direction of ZnS (002). The sputtering-assisted synthesized ZnO-ZnS core-shell nanorods are in a wurtzite structure. Moreover, photoluminance spectral analysis indicated that the introduction of a ZnS shell layer improved the photoexcited electron and hole separation efficiency of the ZnO nanorods. A strong correlation between effective charge separation and the shell thickness aids the photocatalytic behavior of the nanorods and improves their photoresponsive nature. The results of comparative degradation efficiency toward methylene blue showed that the ZnO-ZnS nanorods with the shell thickness of approximately 17 nm have the highest photocatalytic performance than the ZnO-ZnS nanorods with other shell layer thicknesses. The highly reusable catalytic efficiency and superior photocatalytic performance of the ZnO-ZnS nanorods with 17 nm-thick ZnS shell layer supports their potential for environmental applications. PMID:29316671

Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Ravi; Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in

2016-05-06

In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with differentmore » deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.« less

Thickness and Elasticity of Gram-Negative Murein Sacculi Measured by Atomic Force Microscopy

PubMed Central

Yao, X.; Jericho, M.; Pink, D.; Beveridge, T.

1999-01-01

Atomic force microscopy was used to measure the thickness of air-dried, collapsed murein sacculi from Escherichia coli K-12 and Pseudomonas aeruginosa PAO1. Air-dried sacculi from E. coli had a thickness of 3.0 nm, whereas those from P. aeruginosa were 1.5 nm thick. When rehydrated, the sacculi of both bacteria swelled to double their anhydrous thickness. Computer simulation of a section of a model single-layer peptidoglycan network in an aqueous solution with a Debye shielding length of 0.3 nm gave a mass distribution full width at half height of 2.4 nm, in essential agreement with these results. When E. coli sacculi were suspended over a narrow groove that had been etched into a silicon surface and the tip of the atomic force microscope used to depress and stretch the peptidoglycan, an elastic modulus of 2.5 × 107 N/m2 was determined for hydrated sacculi; they were perfectly elastic, springing back to their original position when the tip was removed. Dried sacculi were more rigid with a modulus of 3 × 108 to 4 × 108 N/m2 and at times could be broken by the atomic force microscope tip. Sacculi aligned over the groove with their long axis at right angles to the channel axis were more deformable than those with their long axis parallel to the groove axis, as would be expected if the peptidoglycan strands in the sacculus were oriented at right angles to the long cell axis of this gram-negative rod. Polar caps were not found to be more rigid structures but collapsed to the same thickness as the cylindrical portions of the sacculi. The elasticity of intact E. coli sacculi is such that, if the peptidoglycan strands are aligned in unison, the interstrand spacing should increase by 12% with every 1 atm increase in (turgor) pressure. Assuming an unstressed hydrated interstrand spacing of 1.3 nm (R. E. Burge, A. G. Fowler, and D. A. Reaveley, J. Mol. Biol. 117:927–953, 1977) and an internal turgor pressure of 3 to 5 atm (or 304 to 507 kPa) (A. L. Koch, Adv. Microbial Physiol. 24:301–366, 1983), the natural interstrand spacing in cells would be 1.6 to 2.0 nm. Clearly, if large macromolecules of a diameter greater than these spacings are secreted through this layer, the local ordering of the peptidoglycan must somehow be disrupted. PMID:10559150

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance.

PubMed

Qiu, Wenbin; Ma, Zongqing; Patel, Dipak; Sang, Lina; Cai, Chuanbing; Shahriar Al Hossain, Mohammed; Cheng, Zhenxiang; Wang, Xiaolin; Dou, Shi Xue

2017-10-25

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF 2 ) (100) substrates and glean the detailed information from the FeSe/CaF 2 interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF 2 in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T c ) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T c onset /T c zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF 2 interfaces are also proposed for further enhancing the superconducting performance in this system.

Achilles Tendon Penetration for Continuous 810 nm and Superpulsed 904 nm Lasers Before and After Ice Application: An In Situ Study on Healthy Young Adults.

PubMed

Haslerud, Sturla; Naterstad, Ingvill Fjell; Bjordal, Jan Magnus; Lopes-Martins, Rodrigo Alvaro Brandão; Magnussen, Liv Heide; Leonardo, Patrícia Sardinha; Marques, Ricardo Henrique; Joensen, Jon

2017-10-01

There is a lack of knowledge about the influence tissue temperature may have on laser light penetration and tendon structure. The purpose of this study was to investigate whether penetration of laser energy in human Achilles tendons differed before and after ice pack application. The Achilles tendons (n = 54) from 27 healthy young adults were irradiated with two class 3B lasers (810 nm 200 mW continuous mode laser and a 904 nm 60 mW superpulsed mode laser). The optical energy penetrating the Achilles area was measured before and after 20 min of ice application. Measurements were obtained after 30, 60, and 120 sec irradiation with the 904 nm laser and after 30 and 60 sec irradiation with the 810 nm laser. Achilles tendon thickness was measured with ultrasonography. Optical energy penetration increased significantly (p < 0.01) after ice application for both lasers and at all time points from 0.34% to 0.39% of energy before ice application to 0.43-0.52% of energy after ice application for the 904 nm laser and from 0.24% to 0.25% of energy before ice application to 0.30-0.31% of energy after ice application for the 810 nm laser. The energy loss per centimeter of irradiated tissue was significantly higher (p < 0.05) at all time points after ice application. Ultrasonography imaging of skin-to-skin and transversal tendon thickness was significantly reduced after ice application at p = 0.05 and p = 0.03, respectively. Achilles tendon thickness in the longitudinal plane remained unchanged (p = 0.49). The penetration of laser light increased significantly through healthy Achilles tendons subjected to 20 min of cooling. These findings occurred in the presence of a significant reduction in skin temperature and Achilles tendon thickness.

Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

NASA Astrophysics Data System (ADS)

Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

2016-09-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Ultra low noise YBa{sub 2}Cu{sub 3}O{sub 7−δ} nano superconducting quantum interference devices implementing nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arpaia, R.; CNR-SPIN, Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II,” I-80125 Napoli; Arzeo, M.

2014-02-17

We present results on ultra low noise YBa{sub 2}Cu{sub 3}O{sub 7–δ} (YBCO) nano Superconducting QUantum Interference Devices (nanoSQUIDs). To realize such devices, we implemented high quality YBCO nanowires, working as weak links between two electrodes. We observe critical current modulation as a function of an externally applied magnetic field in the full temperature range below the transition temperature T{sub C}. The white flux noise below 1μΦ{sub 0}/√(Hz) at T=8 K makes our nanoSQUIDs very attractive for the detection of small spin systems.

Microwave surface resistance of MgB2

NASA Astrophysics Data System (ADS)

Zhukov, A. A.; Purnell, A.; Miyoshi, Y.; Bugoslavsky, Y.; Lockman, Z.; Berenov, A.; Zhai, H. Y.; Christen, H. M.; Paranthaman, M. P.; Lowndes, D. H.; Jo, M. H.; Blamire, M. G.; Hao, Ling; Gallop, J.; MacManus-Driscoll, J. L.; Cohen, L. F.

2002-04-01

The microwave power and frequency dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by the breakdown in the ω2 law for poor-quality samples at all temperatures. The performance of MgB2 at 10 GHz and 21 K was compared directly with that of high-quality YBCO films. The surface resistance of MgB2 was found to be approximately three times higher at low microwave power and showed an onset of nonlinearity at microwave surface fields ten times lower than the YBCO film. It is clear that MgB2 films are not yet optimized for microwave applications.

Application of ceramic superconductors in high speed turbines

NASA Technical Reports Server (NTRS)

Mcmichael, C. K.; Lamb, M. A.; Lin, M. W.; Ma, K. B.; Chu, W. K.

1992-01-01

A turbine system was modified to adapt melt textured YBa2Cu3O(7-delta) (YBCO) with high energy permanent magnets to form a hybrid superconducting magnetic bearing (HSMB). The HSMB/turbine prototype has achieved a static axial thrust capacity exceeding 41 N/sq cm (60 psi) and a radial magnetic stiffness of 7 N/mm in a field cooled state at 77 K. A comparison was made between different configurations of magnets and superconductor for radial stability, axial instability, and force hystereses. This systematic study lead to a greater understanding of the interactions between YBCO and high energy permanent magnets to define design parameters for high rotational devices using the HSMB design.

AC application of second generation HTS wire

NASA Astrophysics Data System (ADS)

Thieme, C. L. H.; Gagnon, K.; Voccio, J.; Aized, D.; Claassen, J.

2008-02-01

For the production of Second Generation (2G) YBCO High Temperature Superconductor wire American Superconductor uses a wide-strip MOD-YBCO/RABiTSTM process, a low-cost approach for commercial manufacturing. It can be engineered with a high degree of flexibility to manufacture practical 2G conductors with architectures and properties tailored for specific applications and operating conditions. For ac applications conductor and coil design can be geared towards low hysteretic losses. For applications which experience high frequency ac fields, the stabilizer needs to be adjusted for low eddy current losses. For these applications a stainless-steel laminate is used. An example is a Low Pass Filter Inductor which was developed and built in this work.

Low Temperature Annealed Zinc Oxide Nanostructured Thin Film-Based Transducers: Characterization for Sensing Applications

PubMed Central

Haarindraprasad, R.; Hashim, U.; Gopinath, Subash C. B.; Kashif, Mohd; Veeradasan, P.; Balakrishnan, S. R.; Foo, K. L.; Poopalan, P.

2015-01-01

The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH. PMID:26167853

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Navarro, H., E-mail: henrynavarro@cab.cnea.gov.ar; Sirena, M.; Haberkorn, N.

2015-07-28

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the appliedmore » voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)« less

Interfacial and topological effects on the glass transition in free-standing polystyrene films

NASA Astrophysics Data System (ADS)

Lyulin, Alexey V.; Balabaev, Nikolay K.; Baljon, Arlette R. C.; Mendoza, Gerardo; Frank, Curtis W.; Yoon, Do Y.

2017-05-01

United-atom molecular-dynamics computer simulations of atactic polystyrene (PS) were performed for the bulk and free-standing films of 2 nm-20 nm thickness, for both linear and cyclic polymers comprised of 80 monomers. Simulated volumetric glass-transition temperatures (Tg) show a strong dependence on the film thickness below 10 nm. The glass-transition temperature of linear PS is 13% lower than that of the bulk for 2.5 nm-thick films, as compared to less than 1% lower for 20 nm films. Our studies reveal that the fraction of the chain-end groups is larger in the interfacial layer with its outermost region approximately 1 nm below the surface than it is in the bulk. The enhanced population of the end groups is expected to result in a more mobile interfacial layer and the consequent dependence of Tg on the film thickness. In addition, the simulations show an enrichment of backbone aliphatic carbons and concomitant deficit of phenyl aromatic carbons in the interfacial film layer. This deficit would weaken the strong phenyl-phenyl aromatic (π -π ) interactions and, hence, lead to a lower film-averaged Tg in thin films, as compared to the bulk sample. To investigate the relative importance of the two possible mechanisms (increased chain ends at the surface or weakened π -π interactions in the interfacial region), the data for linear PS are compared with those for cyclic PS. For the cyclic PS, the reduction of the glass-transition temperature is also significant in thin films, albeit not as much as for linear PS. Moreover, the deficit of phenyl carbons in the film interface is comparable to that observed for linear PS. Therefore, chain-end effects alone cannot explain the observed pronounced Tg dependence on the thickness of thin PS films; the weakened phenyl-phenyl interactions in the interfacial region seems to be an important cause as well.

Insights into the magnetic dead layer in La0.7Sr0.3MnO3 thin films from temperature, magnetic field and thickness dependence of their magnetization

NASA Astrophysics Data System (ADS)

Mottaghi, N.; Seehra, M. S.; Trappen, R.; Kumari, S.; Huang, Chih-Yeh; Yousefi, S.; Cabrera, G. B.; Romero, A. H.; Holcomb, M. B.

2018-05-01

Experimental investigations of the magnetic dead layer in 7.6 nm thick film of La0.7Sr0.3MnO3 (LSMO) are reported. The dc magnetization (M) measurements for a sample cooled to T = 5 K in applied field H = 0 reveal the presence of negative remanent magnetization (NRM) in the M vs. H (magnetic field) measurements as well as in the M vs. T measurements in H = 50 Oe and 100 Oe. The M vs. T data in ZFC (zero-field-cooled) and FC (field-cooled) protocols are used to determine the blocking temperature TB in different H. Isothermal hysteresis loops at different T are used to determine the temperature dependence of saturation magnetization (MS), remanence (MR) and coercivity HC. The MS vs. T data are fit to the Bloch law, MS (T) = M0 (1 - BT 3/2), showing a good fit for T < 100 K and yielding the nearest-neighbor exchange constant J/kB ≅ 18 K. The variations of TB vs. H and HC vs. T are well described by the model often used for randomly oriented magnetic nanoparticles with magnetic domain diameter ≈ 9 nm present in the dead-layer of thickness d =1.4 nm. Finally, the data available from literature on the thickness (D) variation of Curie temperature (TC) and MS of LSMO films grown under 200, 150, and 0.38 mTorr pressures of O2 are analyzed in terms of the finite-size scaling, with MS vs. D data fit to MS (D) = MS(b)(1-d/D) yielding the dead layer thickness d = 1.1 nm, 1.4 nm and 2.4 nm respectively. Brief discussion on the significance of these results is presented.

Atom-replaced pins in a Y-based superconductor—single-crystalline perovskite structure including both PrBa2Cu3O7‑x and YBa2Cu3O7‑y

NASA Astrophysics Data System (ADS)

Hayashi, Mariko; Araki, Takeshi; Ishii, Hirotaka; Nishijima, Gen; Matsumoto, Akiyoshi

2018-05-01

Metal organic deposition using trifluoroacetates (TFA-MOD) provides many uniform superconductors on long metal tapes. The large numbers of long wires have been applied for power grids or superconducting fault current limiters. The related applications worked for a long time without fatal trouble. The quasi-liquid produced during the firing process assisted the perfectly uniform structure in TFA-MOD. On the other hand, when it was desired to introduce artificial pinning centers, the quasi-liquid also enlarged the diameter of the artificial pinning centers to several tens of nanometers. In other words, due to the nature of TFA-MOD, there is very little chance of using TFA-MOD to prepare several nm-sized artificial pinning centers. By proposing atom-replaced pins (ARPs), we aim to overcome the impasse. ARPs are realized by replacing yttrium (Y) with praseodymium (Pr) whose valence number changes from 3+ to approximately 4+. Analytical results suggested that Pr makes pinning centers on a PrBa2Cu3O7‑x (PrBCO) unit cell, and the weak-linked superconductivity derived from PrBCO extends to the adjacent unit cells in the a/b-plane. J c decrease by Pr is five times as large as the volume fraction of Pr in the Y-site of the perovskite structure. On the other hand, T c does not show large degradation in YBCO including 10% PrBCO. These results suggest that PrBCO unit cells are fully dispersed in YBa2Cu3O7‑y matrix. With regard to J c in the magnetic field, (Y0.98, Pr0.02)BCO has been slightly improved compared with pure YBCO only in the region of high temperature and low magnetic field of less than 1 T.

Corneal tissue welding with infrared laser irradiation after clear corneal incision.

PubMed

Rasier, Rfat; Ozeren, Mediha; Artunay, Ozgür; Bahçecioğlu, Halil; Seçkin, Ismail; Kalaycoğlu, Hamit; Kurt, Adnan; Sennaroğlu, Alphan; Gülsoy, Murat

2010-09-01

The aim of this study was to investigate the potential of infrared lasers for corneal welding to seal corneal cuts done in an experimental animal model. Full-thickness corneal cuts on freshly enucleated bovine eyes were irradiated with infrared (809-nm diode, 980-nm diode, 1070-nm YLF, and 1980-nm Tm:YAP) lasers to get immediate laser welding. An 809-nm laser was used with the topical application of indocyanine green to enhance the photothermal interaction at the weld site. In total, 60 bovine eyes were used in this study; 40 eyes were used in the first part of the study for the determination of optimal welding parameters (15 eyes were excluded because of macroscopic carbonization, opacification, or corneal shrinkage; 2 eyes were used for control), and 20 eyes were used for further investigation of more promising lasers (YLF and Tm:YAP). Laser wavelength, irradiating power, exposure time, and spot size were the dose parameters, and optimal dose for immediate closure with minimal thermal damage was estimated through histological examination of welded samples. In the first part of the study, results showed that none of the applications was satisfactory. Full-thickness success rates were 28% (2 of 7) for 809-nm and for 980-nm diode lasers and 67% (2 of 3) for 1070-nm YLF and (4 of 6) for 1980-nm Tm:YAP lasers. In the second part of the study, YLF and Tm:YAP lasers were investigated with bigger sample size. Results were not conclusive but promising again. Five corneal incisions were full-thickness welded out of 10 corneas with 1070-nm laser, and 4 corneal incisions were partially welded out of 10 corneas with 1980-nm laser in the second part of the study. Results showed that noteworthy corneal welding could be obtained with 1070-nm YLF laser and 1980-nm Tm:YAP laser wavelengths. Furthermore, in vitro and in vivo studies will shed light on the potential usage of corneal laser welding technique.

Optimal thickness of silicon membranes to achieve maximum thermoelectric efficiency: A first principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangold, Claudia; Neogi, Sanghamitra; Max Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz

2016-08-01

Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.

On the origins of hardness of Cu–TiN nanolayered composites

DOE PAGES

Pathak, S.; Li, N.; Maeder, X.; ...

2015-07-18

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Near-zero IR transmission of VO2 thin films deposited on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunzi; Koughia, Cyril; Li, Yuanshi; Cui, Xiaoyu; Ye, Fan; Shiri, Sheida; Sanayei, Mohsen; Wen, Shi-Jie; Yang, Qiaoqin; Kasap, Safa

2018-05-01

Vanadium dioxide (VO2) thin films of different thickness have been deposited on Si substrates by using DC magnetron sputtering. The effects of substrate pre-treatment by means of seeding (spin coating and ultrasonic bathing) and biasing on the structure and optical properties were investigated. Seeding results in a smaller grain size in the oxide film, whereas biasing results in square-textured crystals. VO2 thin films of 150 nm thick show a near-zero IR transmission in switched state. Especially, the 150 nm thick VO2 thin film with seeding treatment shows an enhanced switching efficiency.

Difference Verification of Cheek Subcutaneous Fat Thickness of Male and Female Using Near Infrared Ray Spectral Characteristic Simulation of Cheek

NASA Astrophysics Data System (ADS)

Nishino, Satoshi; Yasuda, Shun

The near infrared ray spectral characteristic of a person’s cheeks was simulated in this paper, and it was confirmed that the spectral characteristic of the cheeks part by the near infrared rays was detected at the subcutaneous fat under 2mm of the skin. Therefore, subcutaneous fat has a great influence at the near infrared ray spectral characteristic. Concretely, when subcutaneous fat thickness is thick, the absorbance falls down, and the spectral characteristic around 1200nm is the same for an acute angle, and becomes the spectral characteristic of the female. On the other hand, increasing the water content to simulate the increase in the thickness of the subcutaneous fat, the light absorbance rises, and the acute angle of the spectral characteristic around 1200nm disappears. The 1200nm characteristic becomes that of the male’s spectral characteristic which shows a rounded form. From the discussion above, it could be verified that a difference in the subcutaneous fat thickness is the factor of the difference in the near infrared ray spectral characteristics between that of a male and female cheek.

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures

NASA Astrophysics Data System (ADS)

Ťapajna, M.; Paskaleva, A.; Atanassova, E.; Dobročka, E.; Hušeková, K.; Fröhlich, K.

2010-07-01

Leakage conduction mechanisms in Ru/Ta2O5/SiON/Si structures with rf-sputtered Ta2O5 with thicknesses ranging from 13.5 to 1.8 nm were systematically studied. Notable reaction at the Ru/Ta2O5 interface was revealed by capacitance-voltage measurements. Temperature-dependent current-voltage characteristics suggest the bulk-limited conduction mechanism in all metal-oxide-semiconductor structures. Under gate injection, Poole-Frenkel emission was identified as a dominant mechanism for 13.5 nm thick Ta2O5. With an oxide thickness decreasing down to 3.5 nm, the conduction mechanism transforms to thermionic trap-assisted tunnelling through the triangular barrier. Under substrate injection, the dominant mechanism gradually changes with decreasing thickness from thermionic trap-assisted tunnelling to trap-assisted tunnelling through the triangular barrier; Poole-Frenkel emission was not observed at all. A 0.7 eV deep defect level distributed over Ta2O5 is assumed to be responsible for bulk-limited conduction mechanisms and is attributed to H-related defects or oxygen vacancies in Ta2O5.

Spin Wave Resonances in La_0.67Ba_0.33MnO_3

NASA Astrophysics Data System (ADS)

Lofland, S. E.; Dominguez, M.; Tyagi, S. D.; Bhagat, S. M.; Kwon, C.; Robson, M. C.; Sharma, R. P.; Ramesh, R.; Venkatesan, T.

1996-03-01

Thin ( ~ 110 nm thick) films of La_0.67Ba_0.33MnO3 (LBMO) were prepared by pulsed laser deposition on LaAlO3 substrates. Some films were grown directly onto LaAlO3 while other films were made by first creating a ~ 80 nm thick buffer layer of SrTiO3 (STO) and then capped with a 20 nm thick layer of STO. X-ray and RBS measurements showed the films to be of high crystalline quality. Film thickness was determined by RBS. Spin wave resonance (SWR) measurements were performed at both 10 and 36 GHz. In both types of films Portis (equally spaced) modes were observed. This indicated a non-uniform magnetization which has a parabolic spatial distribution. However, certain tri-layer films showed Kittel modes which follow the n^2 dependence of the mode number n on the resonance field. From the mode separation and the thickness, we calculate the spin stiffness D(0) to be 47 ± 10 meVÅWith this value of D and the magnetization M, we estimate a spatial variation of the magnetization of ~ 20% for those films which showed Portis modes.

Short-length and high-density TiO{sub 2} nanorod arrays for the efficient charge separation interface in perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Guannan; Shi, Chengwu, E-mail: shicw506@foxmail.com; Zhang, Zhengguo

The TiO{sub 2} nanorod arrays with the length of 70 nm, the diameter of 20 nm, and the areal density of 1000 µm{sup −2} were firstly prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 60 min. Over-500 nm-thickness CH{sub 3}NH{sub 3}PbI{sub 3−x}Br{sub x} absorber layers were successfully obtained by sequential deposition routes using 1.7 M PbI{sub 2}·DMSO complex precursor solution and 0.465 M isopropanol solution of the methylammonium halide mixture with the molar ratio of CH{sub 3}NH{sub 3}I/CH{sub 3}NH{sub 3}Br=85/15. The perovskite solar cellsmore » based on the TiO{sub 2} nanorod array and 560 nm-thickness CH{sub 3}NH{sub 3}PbI{sub 3−x}Br{sub x} absorber layer exhibited the best photoelectric conversion efficiency (PCE) of 15.93%, while the corresponding planar perovskite solar cells without the TiO{sub 2} nanorod array and with 530 nm-thickness CH{sub 3}NH{sub 3}PbI{sub 3−x}Br{sub x} absorber layer gave the best PCE of 12.82% at the relative humidity of 50–54%. - Graphical abstract: The TiO{sub 2} nanorod arrays with the length of 70 nm, the diameter of 20 nm, and the areal density of 1000 µm{sup −2} were prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 60 min. The optimal annealing temperature of TiO{sub 2} nanorod arrays was 450 °C. The perovskite solar cells based on the TiO{sub 2} nanorod array and 560 nm-thickness CH{sub 3}NH{sub 3}PbI{sub 3−x}Br{sub x} absorber layer exhibited the best photoelectric conversion efficiency (PCE) of 15.93% and the average PCE of 13.41±2.52%, while the corresponding planar perovskite solar cells without the TiO{sub 2} nanorod array and with 530 nm-thickness CH{sub 3}NH{sub 3}PbI{sub 3−x}Br{sub x} absorber layer gave the best PCE of 12.82% and the average PCE of 10.54±2.28% at the relative humidity of 50–54%. - Highlights: • Preparation of TiO{sub 2} nanorod array with length of 70 nm and density of 1000 µm{sup −2}. • Influence of annealing temperatures on the -OH content of TiO{sub 2} nanorod arrays. • Preparation of over-500 nm-thickness CH{sub 3}NH{sub 3}PbI{sub 3−x}Br{sub x} absorber layer. • Combination of short-length TiO{sub 2} nanorod array and high-thickness perovskite layer. • The best and average PCE with TiO{sub 2} array of 15.93% and 13.41±2.52% at 50–54% RH.« less

Analytical model of nanoscale junctionless transistors towards controlling of short channel effects through source/drain underlap and channel thickness engineering

NASA Astrophysics Data System (ADS)

Roy, Debapriya; Biswas, Abhijit

2018-01-01

We develop a 2D analytical subthreshold model for nanoscale double-gate junctionless transistors (DGJLTs) with gate-source/drain underlap. The model is validated using well-calibrated TCAD simulation deck obtained by comparing experimental data in the literature. To analyze and control short-channel effects, we calculate the threshold voltage, drain induced barrier lowering (DIBL) and subthreshold swing of DGJLTs using our model and compare them with corresponding simulation value at channel length of 20 nm with channel thickness tSi ranging 5-10 nm, gate-source/drain underlap (LSD) values 0-7 nm and source/drain doping concentrations (NSD) ranging 5-12 × 1018 cm-3. As tSi reduces from 10 to 5 nm DIBL drops down from 42.5 to 0.42 mV/V at NSD = 1019 cm-3 and LSD = 5 nm in contrast to decrement from 71 to 4.57 mV/V without underlap. For a lower tSiDIBL increases marginally with increasing NSD. The subthreshold swing reduces more rapidly with thinning of channel thickness rather than increasing LSD or decreasing NSD.

Photochemistry on ultrathin metal films: Strongly enhanced cross sections for NO2 on Ag /Si(100)

NASA Astrophysics Data System (ADS)

Wesenberg, Claudia; Autzen, Olaf; Hasselbrink, Eckart

2006-12-01

The surface photochemistry of NO2 on ultrathin Ag(111) films (5-60nm ) on Si(100) substrates has been studied. NO2, forming N2O4 on the surface, dissociates to release NO and NO2 into the gas phase with translational energies exceeding the equivalent of the sample temperature. An increase of the photodesorption cross section is observed for 266nm light when the film thickness is decreased below 30nm despite the fact that the optical absorptivity decreases. For 4.4nm film thickness this increase is about threefold. The data are consistent with a similar effect for 355nm light. The reduced film thickness has no significant influence on the average translation energy of the desorbing molecules or the branching into the different channels. The increased photodesorption cross section is interpreted to result from photon absorption in the Si substrate producing electrons with no or little momenta parallel to the surface at energies where this is not allowed in Ag. It is suggested that these electrons penetrate through the Ag film despite the gap in the surface projected band structure.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

Refractive index sensing in the visible/NIR spectrum using silicon nanopillar arrays.

PubMed

Visser, D; Choudhury, B Dev; Krasovska, I; Anand, S

2017-05-29

Si nanopillar (NP) arrays are investigated as refractive index sensors in the visible/NIR wavelength range, suitable for Si photodetector responsivity. The NP arrays are fabricated by nanoimprint lithography and dry etching, and coated with thin dielectric layers. The reflectivity peaks obtained by finite-difference time-domain (FDTD) simulations show a linear shift with coating layer thickness. At 730 nm wavelength, sensitivities of ~0.3 and ~0.9 nm/nm of SiO 2 and Si 3 N 4 , respectively, are obtained; and the optical thicknesses of the deposited surface coatings are determined by comparing the experimental and simulated data. The results show that NP arrays can be used for sensing surface bio-layers. The proposed method could be useful to determine the optical thickness of surface coatings, conformal and non-conformal, in NP-based optical devices.

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001].

PubMed

Murdey, Richard; Sato, Naoki

2011-06-21

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network. © 2011 American Institute of Physics

Surface-enhanced Raman spectroscopy substrate based on Ag-coated self-assembled polystyrene spheres

NASA Astrophysics Data System (ADS)

Mikac, Lara; Ivanda, Mile; Gotić, Marijan; Janicki, Vesna; Zorc, Hrvoje; Janči, Tibor; Vidaček, Sanja

2017-10-01

The silver (Ag) films were deposited on the monodispersed polystyrene spheres that were drop-coated on hydrophilic glass substrates in order to form a self-assembled 2D monolayer. Thus prepared Ag films over polystyrene nanospheres (AgFONs) were used to record the surface-enhanced Raman scattering (SERS) spectra of rhodamine 6G (R6G) and pyridine (λex = 514.5 nm). AgFONs were prepared by depositing 120, 180 and 240 nm thick Ag layer on the 1000 nm polystyrene spheres and 80, 120, 160 and 200 nm thick Ag layer on the 350 nm spheres as well as on their mixture (350 + 1000 nm). The silver was deposited by electron beam evaporation technique. The best enhancement of the Raman signal for both test molecules was obtained using 180 nm Ag film deposited on the 1000 nm spheres and using 80 nm Ag film deposited on the 350 nm polystyrene spheres. The lowest detectable concentrations of R6G and pyridine were 10-9 mol L-1 and 1.2 × 10-3 mol L-1, respectively. This study has shown that AgFONs could be regarded as good and reproducible SERS substrate for analytical detection of various organic molecules.

Plasmonic resonance in planer split ring trimer

NASA Astrophysics Data System (ADS)

Xu, Haiqing; Li, Hongjian; Xiao, Gang

2014-12-01

We have numerically investigated the plasmon properties supported by asymmetry planer split ring trimer structures. We investigate the modification of gap distance, thickness and gap width on the transmission properties of the weak coupling model (g is larger than or equal to 120 nm, d=48 nm, t is larger than 30 nm, w1=200 nm, and w2=40 nm), as the coupling becomes weaker, the first peak sharply attenuates, the second peak slightly decreases, the transmission dip in the near-infrared region becomes shallow, and they are very sensitive to the gap distance between two small split ring pairs and the thickness and gap width of the big split ring. We also study the change of gap distance on the strong coupling model (g is smaller than or equal to 40 nm, d=24 nm, t=10 nm, w1=80 nm, and w2=20 nm), there exists a new Fano resonance peak, the strongest peak in visible region becomes symmetry, while the peak in near-infrared region becomes asymmetry. The resonator design strategy opens up a rich pathway for the implementation of optimized optical properties for specific applications.

A novel pre-sintering technique for the growth of Y-Ba-Cu-O superconducting single grains from raw metal oxides

NASA Astrophysics Data System (ADS)

Li, Jiawei; Shi, Yun-Hua; Dennis, Anthony R.; Namburi, Devendra Kumar; Durrell, John H.; Yang, Wanmin; Cardwell, David A.

2017-09-01

Most established top seeded melt growth (TSMG) processes of bulk, single grain Y-Ba-Cu-O (YBCO) superconductors are performed using a mixture of pre-reacted precursor powders. Here we report the successful growth of large, single grain YBCO samples by TSMG with good superconducting properties from a simple precursor composition consisting of a sintered mixture of the raw oxides. The elimination of the requirement to synthesize precursor powders in a separate process prior to melt processing has the potential to reduce significantly the cost of bulk superconductors, which is essential for their commercial exploitation. The growth morphology, microstructure, trapped magnetic field and critical current density, J c, at different positions within the sample and maximum levitation force of the YBCO single grains fabricated by this process are reported. Measurements of the superconducting properties show that the trapped filed can reach 0.45 T and that a zero field J c of 2.5 × 104 A cm-2 can be achieved in these samples. These values are comparable to those observed in samples fabricated using pre-reacted, high purity commercial oxide precursor powders. The experimental results are discussed and the possibility of further improving the melt process using raw oxides is outlined.

Isotropic enhancement in the critical current density of YBCO thin films incorporating nanoscale Y2BaCuO5 inclusions

NASA Astrophysics Data System (ADS)

Jha, Alok K.; Matsumoto, Kaname; Horide, Tomoya; Saini, Shrikant; Mele, Paolo; Ichinose, Ataru; Yoshida, Yutaka; Awaji, Satoshi

2017-09-01

The effect of incorporation of nanoscale Y2BaCuO5 (Y211) inclusions on the vortex pinning properties of YBa2Cu3O7-δ (YBCO or Y123) superconducting thin films is investigated in detail on the basis of variation of critical current density (JC) with applied magnetic field and also with the orientation of the applied magnetic field at two different temperatures: 77 K and 65 K. Surface modified target approach is employed to incorporate nanoscale Y211 inclusions into the superconducting YBCO matrix. The efficiency of Y211 nanoinclusions in reducing the angular anisotropy of critical current density is found to be significant. The observed angular dependence of the critical current density is discussed on the basis of mutually occupied volume by a vortex and spherical and/or planar defect. A dip in JC near the ab-plane is also observed which has been analyzed on the basis of variation of pinning potential corresponding to a spherical (3-D) or planar (2-D) pinning center and has been attributed to a reduced interaction volume of the vortices with a pinning center and competing nature of the potentials due to spherical and planar defects.

On the use of copper-based substrates for YBCO coated conductors

NASA Astrophysics Data System (ADS)

Vannozzi, A.; Fabbri, F.; Augieri, A.; Angrisani Armenio, A.; Galluzzi, V.; Mancini, A.; Rizzo, F.; Rufoloni, A.; Padilla, J. A.; Xuriguera, E.; De Felicis, D.; Bemporad, E.; Celentano, G.

2014-05-01

It is well known that the recrystallization texture of heavily cold-rolled pure copper is almost completely cubic. However, one of the main drawbacks concerning the use of pure copper cube-textured substrates for YBCO coated conductor is the reduced secondary recrystallization temperature. The onset of secondary recrystallization (i.e., the occurrence of abnormal grains with unpredictable orientation) in pure copper substrate was observed within the typical temperature range required for buffer layer and YBCO processing (600-850 °C). To avoid the formation of abnormal grains the effect of both grain size adjustment (GSA) and recrystallization annealing was analyzed. The combined use of a small initial grain size and a recrystallization two-step annealing (TSA) drastically reduced the presence of abnormal grains in pure copper tapes. Another way to overcome the limitation imposed by the formation of abnormal grains is to deposit a buffer layer at temperatures where secondary recrystallization does not occur. For example, La2Zr2O7 (LZO) film with a high degree of epitaxy was grown by metal-organic decomposition (MOD) at 1000 °C on pure copper substrate. In several samples the substrate underwent secondary recrystallization. Our experiments indicate that the motion of grain boundaries occurring during secondary recrystallization process does not affect the quality of LZO film.

Third order intermodulation distortion in HTS Josephson Junction downconverter at 12GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Katsumi; Hayashi, Kunihiko; Fujimoto, Manabu

1994-12-31

Here the authors first report on the microwave characteristics of the third order intermodulation distortion(IMD3) in High-Tc Superconductor (HTS) Josephson Junction (JJ) Downconverter at 12GHz. They have successfully developed high quality nonlinear YBCO microbridge Josephson junctions for such an active MMIC as a mixer with RF, LO, IF and bias filters, which have been fabricated on (100) MgO substrates with 20mm x 20mm x 0.5mm dimensions. The minimum conversion loss of the JJ mixer is 11 dB at very small local microwave input power LO= {minus}20dBm which is two order less than Schottky diode mixer. Consequently, this small optimum LOmore » power gives the small RF input power at which the output IF power of the YBCO mixer saturates. Two-tone third-order intercept point(IP3) performance is a significantly important figure of merit typically used to define linearity of devices and circuits. The RF input power = {minus}15dBm at the IP3 point is obtained for the YBCO mixer at 15K and LO = 10.935GHz with {minus}22dBm. The have successfully measured the dependence of IMD3 on temperature, bias current and LO power.« less

A K-band Frequency Agile Microstrip Bandpass Filter using a Thin Film HTS/Ferroelectric/dielectric Multilayer Configuration

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; VanKeuls, Fred; Miranda, Felix A.

1998-01-01

We report on YBa2Cu3O(7-delta) (YBCO) thin film/SrTiO3 (STO) thin film K-band tunable bandpass filters on LaAlO3 (LAO) dielectric substrates. The 2 pole filter has a center frequency of 19 GHz and a 4% bandwidth. Tunability is achieved through the non-linear dc electric field dependence of the relative dielectric constant of STO(epsilon(sub rSTO). A large tunability ((Delta)f/f(sub 0) = (f(sub Vmax) - f(sub 0)/f(sub 0), where f(sub 0) is the center frequency of the filter at no bias and f(sub Vmax) is the center frequency of the filter at the maximum applied bias) of greater than 10% was obtained in YBCO/STO/LAO microstrip bandpass filters operating below 77 K. A center frequency shift of 2.3 GHz (i.e., a tunability factor of approximately 15%) was obtained at a 400 V bipolar dc bias, and 30 K, with minimal degradation in the insertion loss of the filter. This paper addresses design, fabrication and testing of tunable filters based on STO ferroelectric thin films. The performance of the YBCO/STO/LAO filters is compared to that of gold/STO/LAO counterparts.

Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

NASA Astrophysics Data System (ADS)

Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

2017-08-01

The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2Rg film thickness, where Rg ∼ 20 nm (Rg is the unperturbed radius of gyration of polystyrene, defined by Rg = 0.272 √M0, and M0 is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

Suppression of superconductivity in epitaxial MgB2 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Chen; Wang, Yue; Wang, Da; Zhang, Yan; Liu, Zheng-Hao; Feng, Qing-Rong; Gan, Zi-Zhao

2013-07-01

MgB2 ultrathin films have potential to make sensitive superconducting devices such as superconducting single-photon detectors working at relatively high temperatures. We have grown epitaxial MgB2 films in thicknesses ranging from about 40 nm to 6 nm by using the hybrid physical-chemical vapor deposition method and performed electrical transport measurements to study the thickness dependence of the superconducting critical temperature Tc. With reducing film thickness d, although a weak depression of the Tc has been observed, which could be attributed to an increase of disorder (interband impurity scattering) in the film, the Tc retains close to the bulk value of MgB2 (39 K), being about 35 K in the film of 6 nm thick. We show that this result, beneficial to the application of MgB2 ultrathin films and in accordance with recent theoretical calculations, is in contrast to previous findings in MgB2 films prepared by other methods such as co-evaporation and molecular-beam epitaxy, where a severe Tc suppression has been observed with Tc about one third of the bulk value in films of ˜5 nm thick. We discuss this apparent discrepancy in experiments and suggest that, towards the ultrathin limit, the different degrees of Tc suppression displayed in currently obtained MgB2 films by various techniques may arise from the different levels of disorder present in the film or different extents of proximity effect at the film surface or film-substrate interface.

Highly efficient color filter array using resonant Si3N4 gratings.

PubMed

Uddin, Mohammad Jalal; Magnusson, Robert

2013-05-20

We demonstrate the design and fabrication of a highly efficient guided-mode resonant color filter array. The device is designed using numerical methods based on rigorous coupled-wave analysis and is patterned using UV-laser interferometric lithography. It consists of a 60-nm-thick subwavelength silicon nitride grating along with a 105-nm-thick homogeneous silicon nitride waveguide on a glass substrate. The fabricated device exhibits blue, green, and red color response for grating periods of 274, 327, and 369 nm, respectively. The pixels have a spectral bandwidth of ~12 nm with efficiencies of 94%, 96%, and 99% at the center wavelength of blue, green, and red color filter, respectively. These are higher efficiencies than reported in the literature previously.

Oxidation and reduction under cover: Chemistry at the confined space between ultra-thin nanoporous silicates and Ru(0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. Anibal Boscoboinik; Zhong, Jian -Qiang; Kestell, John

2016-03-23

The oxidation and reduction of Ru(0001) surfaces at the confined space between two-dimensional nanoporous silica frameworks and Ru(0001) have been investigated using synchrotron-based ambient pressure X-ray photoelectron spectroscopy (AP-XPS). The porous nature of the frameworks and the weak interaction between the silica and the ruthenium substrate allow oxygen and hydrogen molecules to go through the nanopores and react with the metal at the interface between the silica framework and the metal surface. In this work, three types of two-dimensional silica frameworks have been used to study their influence in the oxidation and reduction of the ruthenium surface at elevated pressuresmore » and temperatures. These frameworks are bilayer silica (0.5 nm thick), bilayer aluminosilicate (0.5 nm thick), and zeolite MFI nanosheets (3 nm thick). It is found that the silica frameworks stay essentially intact under these conditions, but they strongly affect the oxidation of ruthenium, with the 0.5 nm thick aluminosilicate bilayer completely inhibiting the oxidation. Furthermore, the latter is believed to be related to the lower chemisorbed oxygen content arising from electrostatic interactions between the negatively charged aluminosilicate framework and the Ru(0001) substrate.« less

Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Haiyan; Wang, Wenliang; Yang, Weijia

2015-05-14

AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is amore » direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.« less

Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

PubMed

Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

2015-08-19

The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

NASA Astrophysics Data System (ADS)

Güner, S.; Budak, S.; Gibson, B.; Ila, D.

2014-08-01

We have deposited five periodic SiO2/SiO2 + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO2:Ag layers were 2.7-5 nm and SiO2 buffer layers were 1-15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO2 were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO2 was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 1014 and 1 × 1016 ions/cm2 values. Optical absorption spectra were recorded in the range of 200-900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

Thickness and annealing effects on thermally evaporated InZnO thin films for gas sensors and blue, green and yellow emissive optical devices

NASA Astrophysics Data System (ADS)

Sugumaran, Sathish; Jamlos, Mohd Faizal; Ahmad, Mohd Noor; Bellan, Chandar Shekar; Sivaraj, Manoj

2016-08-01

Indium zinc oxide (InZnO) thin films with thicknesses of 100 nm and 200 nm were deposited on glass plate by thermal evaporation technique. Fourier transform infrared spectra showed a strong metal-oxide bond. X-ray diffraction patterns revealed amorphous nature for as-deposited film whereas polycrystalline structure for annealed films. Scanning electron microscope images showed a uniform distribution of spherical shape grains. Grain size was found to be higher for 200 nm film than 100 nm film. The presence of elements (In, Zn and O) was confirmed from energy dispersive X-ray analysis. Photoluminescence study of 200 nm film showed a blue, blue-green and blue-yellow emission whereas 100 nm film showed a broad green and green-yellow emissions. Both 100 nm and 200 nm films showed good oxygen sensitivity from room temperature to 400 °C. The observed optical and sensor results indicated that the prepared InZnO films are highly potential for room temperature gas sensor and blue, green and yellow emissive opto-electronic devices.

AC loss in YBCO coated conductors at high dB/dt measured using a spinning magnet calorimeter (stator testbed environment)

NASA Astrophysics Data System (ADS)

Murphy, J. P.; Gheorghiu, N. N.; Bullard, T.; Haugan, T.; Sumption, M. D.; Majoros, M.; Collings, E. W.

2017-09-01

A new facility for the measurement of AC loss in superconductors at high dB/dt has been developed. The test device has a spinning rotor consisting of permanent magnets arranged in a Halbach array; the sample, positioned outside of this, is exposed to a time varying AC field with a peak radial field of 0.566 T. At a rotor speed of 3600 RPM the frequency of the AC field is 240 Hz, the radial dB/dt is 543 T/s and the tangential dB/dt is 249 T/s. Loss is measured using nitrogen boiloff from a double wall calorimeter feeding a gas flow meter. The system is calibrated using power from a known resistor. YBCO tape losses were measured in the new device and compared to the results from a solenoidal magnet AC loss system measurement of the same samples (in this latter case measurements were limited to a field of amplitude 0.1 T and a dB/dt of 100 T/s). Solenoidal magnet system AC loss measurements taken on a YBCO sample agreed with the Brandt loss expression associated with a 0-0.1 T Ic of 128 A. Subsequently, losses for two more YBCO tapes nominally identical to the first were individually measured in this spinning magnet calorimeter (SMC) machine with a Bmax of 0.566 T and dB/dt of up to 272 T/s. The losses, compared to a simplified version of the Brandt expression, were consistent with the average Ic expected for the tape in the 0-0.5 T range at 77 K. The eddy current contribution was consistent with a 77 K residual resistance ratio, RR, of 4.0. The SMC results for these samples agreed to within 5%. Good agreement was also obtained between the results of the SMC AC loss measurement and the solenoidal magnet AC loss measurement on the same samples.

What can Andreev bound states tell us about superconductors?

PubMed

Millo, Oded; Koren, Gad

2018-08-06

Zero-energy Andreev bound states, which manifest themselves in the tunnelling spectra as zero-bias conductance peaks (ZBCPs), are abundant at interfaces between superconductors and other materials and on the nodal surface of high-temperature superconductors. In this review, we focus on the information such excitations can provide on the properties of superconductor systems. First, a general introduction to the physics of Andreev bound states in superconductor/normal metal interfaces is given with a particular emphasis on why they appear at zero energy in d -wave superconductors. Then, specific spectroscopic tunnelling studies of thin films, bilayers and junctions are described, focusing on the corresponding ZBCP features. Scanning tunnelling spectroscopy (STS) studies show that the ZBCPs on the c -axis YBa 2 Cu 3 O 7- δ (YBCO) films are correlated with the surface morphology and appear only in proximity to (110) facets. STS on c -axis La 1.88 Sr 0.12 CuO 4 (LSCO) films exhibiting the 1/8 anomaly shows spatially modulated peaks near zero bias associated with the anti-phase ordering of the d -wave order parameter predicted at this doping level. ZBCPs were also found in micrometre-size edge junctions of YBCO/SrRuO 3 /YBCO, where SrRuO 3 is ferromagnetic. Here, the results are consistent with a crossed Andreev reflection effect (CARE) at the narrow domain walls of the SrRuO 3 ZBCPs measured in STS studies of manganite/cuprate bilayers could not be attributed to CARE because the manganite's domain wall is much larger than the coherence length in YBCO, and instead are attributed to proximity-induced triplet-pairing superconductivity with non-conventional symmetry. And finally, ZBCPs found in junctions of non-intentionally doped topological insulator films of Bi 2 Se 3 and the s -wave superconductor NbN are attributed to proximity-induced p x  + ip y triplet order parameter in the topological material.This article is part of the theme issue 'Andreev bound states'. © 2018 The Author(s).

General approach for the determination of the magneto-angular dependence of the critical current of YBCO coated conductors

NASA Astrophysics Data System (ADS)

Zhang, X.; Zhong, Z.; Ruiz, H. S.; Geng, J.; Coombs, T. A.

2017-02-01

The physical understanding and numerical modelling of superconducting devices which exploit the high performance of second generation high temperature superconducting tapes (2G-HTS), is commonly hindered by the lack of accurate functions which allow the consideration of the in-field dependence of the critical current. This is true regardless of the manufacturer of the superconducting tape. In this paper, we present a general approach for determining a unified function I c(B, θ), ultimately capable of describing the magneto-angular dependence of the in-field critical current of commercial 2G-HTS tapes in the Lorentz configuration. Five widely different superconducting tapes, provided by three different manufacturers, have been tested in a liquid nitrogen bath and external magnetic fields of up to 400 mT. The critical current was recorded at 90 different orientations of the magnetic field ranging from θ = 0°, i.e., with B aligned with the crystallographic ab-planes of the YBCO layer, towards ±90°, i.e., with B perpendicular to the wider surfaces of the 2G-HTS tape. The whole set of experimental data has been analysed using a novel multi-objective model capable of predicting a sole function I c(B, θ). This allows an accurate validation of the experimental data regardless of the fabrication differences and widths of the superconducting tapes. It is shown that, in spite of the wide set of differences between the fabrication and composition of the considered tapes, at liquid nitrogen temperature the magneto-angular dependence of the in-field critical current of YBCO-based 2G-HTS tapes, can be described by a universal function I c(f(B), θ), with a power law field dependence dominated by the Kim’s factor B/B 0, and an angular dependence moderated by the electron mass anisotropy ratio of the YBCO layer.

Experimental transport studies of yttrium barium copper oxide and lambda-DNA

NASA Astrophysics Data System (ADS)

Zhang, Yuexing

This dissertation consists of two parts. In Part I, we focus on the quasi-particle transport properties in the high temperature superconductor YBa2Cu3O7-delta (YBCO), probed by the thermal Hall conductivity (kappa xy). The thermal Hall conductivity selectively reflects the transport behaviors of the charge carriers. By measuring kappaxy in the normal state YBCO, we established a new method to determine the Wiedemann-Franz (WF) ratio in cuprates. We determined the Hall-channel WF ratio kappa xy/sigmaxyT in Cu and YBCO. In the latter, we uncovered a T-linear dependence and suppression of the Hallchannel WF ratio. The suppression of the Hall-channel WF ratio in systems with predominant electron-electron scattering will be discussed. Thermal transport behaviors of the quasi-particles in the mixed state were studied by measuring kappaxx and kappa xy in a high-purity YBCO crystal. From the field-dependence of the thermal conductivity kappaxx, we separated the quasi particle contribution (kappae) from the phonon background. In the Hall channel, we observed that the (weak-field) kappa xy increased 103-fold between T c (90 K) and 30 K, implying a 100-fold enhancement of the quasi-particle lifetime. We found that kappaxy exhibited a specific scaling behavior below ˜30 K. The implication of the scaling behavior will be discussed. In Part II, we describe an experiment on determining the electrical conductivity of the bacteriophage lambda-DNA, an issue currently under intense debate. We covalently bonded the DNA to Au electrodes by incorporating thiol modified dTTP into the 'sticky' ends of the lambda-DNA. Two-probe measurements on such molecules provided a lower bound for the resistivity rho > 10 6 mum at bias potentials up to 20 V, in conflict with recent claims of moderate to high conductivity. We stress the importance of eliminating salt residues in these measurements.

[Multiplayer white organic light-emitting diodes with different order and thickness of emission layers].

PubMed

Xu, Wei; Lu, Fu-Han; Cao, Jin; Zhu, Wen-Qing; Jiang, Xue-Yin; Zhang, Zhi-Lin; Xu, Shao-Hong

2008-02-01

In multilayer OLED devices, the order and thickness of the emission layers have great effect on their spectrum. Based on the three basic colours of red, blue and green, a series of white organic light-emitting diodes(WOLEDS)with the structure of ITO/CuPc(12 nm)/NPB(50 nm)/EML/LiF(1 nm)/Al(100 nm) and a variety of emission layer's orders and thicknesses were fabricated. The blue emission material: 2-t-butyl-9,10-di-(2-naphthyl)anthracene (TBADN) doped with p-bis(p-N, N-diphenyl-amono-styryl)benzene(DSA-Ph), the green emission material: tris-[8-hydroxyquinoline]aluminum(Alq3) doped with C545, and the red emission material: tris-[8-hydroxyquinoline]aluminum( Alq3) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) were used. By adjusting the order and thickness of each emission layer in the RBG structure, we got a white OLED with current efficiency of 5.60 cd x A(-1) and Commission Internationale De L'Eclairage (CIE) coordinates of (0. 34, 0.34) at 200 mA x cm(-2). Its maximum luminance reached 20 700 cd x m(-2) at current density of 400 mA x cm(-2). The results were analyzed on the basis of the theory of excitons' generation and diffusion. According to the theory, an equation was set up which relates EL spectra to the luminance efficiency, the thickness of each layer and the exciton diffusion length. In addition, in RBG structure with different thickness of red layer, the ratio of th e spectral intensity of red to that of blue was calculated. It was found that the experimental results are in agreement with the theoretical values.

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-05-15

Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performedmore » by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.« less

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

NASA Astrophysics Data System (ADS)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

PubMed

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short-term exposure and emptying did not significantly influence the silicone oil layer at the investigated silicone level. It thus appears reasonable to use this approach to characterize silicone oil layers in filled syringes over time. The developed method characterizes non-destructively the layer thickness and distribution of silicone oil in empty syringes and provides fast access to reliable results. The gained information can be further used to support optimization of siliconization processes and increase the understanding of syringe functionality. LAY ABSTRACT: Silicone oil layers as lubricant are required to ensure functionality of prefilled syringes. Methods evaluating these layers are limited, and systematic evaluation is missing. The aim of this study was to develop and assess white light interferometry as an analytical method to characterize sprayed-on silicone oil layers in 1 mL prefilled syringes. White light interferometry showed a good accuracy (93-99%) as well as instrument and analyst precision (0.5% and 4.1%, respectively). Different applied instrument parameters had no significant impact on the measured layer thickness. The obtained values from white light interferometry applying a fully developed method concurred with orthogonal results from 3D-laser scanning microscopy and combined white light and laser interferometry. The average layer thicknesses in two investigated syringe lots gradually decreased from 170-190 nm at the flange to 100-90 nm at the needle side. The silicone layers were homogeneously distributed over the syringe barrel circumference (110-135 nm) for both lots. Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. Syringe filling with a surrogate solution, including short-term exposure and emptying, did not significantly affect the silicone oil layer. The developed, non-destructive method provided reliable results to characterize the silicone oil layer thickness and distribution in empty siliconized syringes. This information can be further used to support optimization of siliconization processes and increase understanding of syringe functionality. © PDA, Inc. 2018.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Ultrathin free-standing close-packed gold nanoparticle films: Conductivity and Raman scattering enhancement

NASA Astrophysics Data System (ADS)

Yu, Qing; Huang, Hongwen; Peng, Xinsheng; Ye, Zhizhen

2011-09-01

A simple filtration technique was developed to prepare large scale free-standing close-packed gold nanoparticle ultrathin films using metal hydroxide nanostrands as both barrier layer and sacrificial layer. As thin as 70 nm, centimeter scale robust free-standing gold nanoparticle thin film was obtained. The thickness of the films could be easily tuned by the filtration volumes. The electronic conductivities of these films varied with the size of the gold nanoparticles, post-treatment temperature, and thickness, respectively. The conductivity of the film prepared from 20 nm gold nanoparticles is higher than that of the film prepared from 40 nm gold nanoparticle by filtering the same filtration volume of their solution, respectively. Their conductivities are comparable to that of the 220 nm thick ITO film. Furthermore, these films demonstrated an average surface Raman scattering enhancement up to 6.59 × 105 for Rhodamine 6 G molecules on the film prepared from 40 nm gold nanoparticles. Due to a lot of nano interspaces generated from the close-packed structures, two abnormal enhancements and relative stronger intensities of the asymmetrical vibrations at 1534 and 1594 cm-1 of R6G were observed, respectively. These robust free-standing gold nanoparticle films could be easily transferred onto various solid substrates and hold the potential application for electrodes and surface enhanced Raman detectors. This method is applicable for preparation of other nanoparticle free-standing thin films.A simple filtration technique was developed to prepare large scale free-standing close-packed gold nanoparticle ultrathin films using metal hydroxide nanostrands as both barrier layer and sacrificial layer. As thin as 70 nm, centimeter scale robust free-standing gold nanoparticle thin film was obtained. The thickness of the films could be easily tuned by the filtration volumes. The electronic conductivities of these films varied with the size of the gold nanoparticles, post-treatment temperature, and thickness, respectively. The conductivity of the film prepared from 20 nm gold nanoparticles is higher than that of the film prepared from 40 nm gold nanoparticle by filtering the same filtration volume of their solution, respectively. Their conductivities are comparable to that of the 220 nm thick ITO film. Furthermore, these films demonstrated an average surface Raman scattering enhancement up to 6.59 × 105 for Rhodamine 6 G molecules on the film prepared from 40 nm gold nanoparticles. Due to a lot of nano interspaces generated from the close-packed structures, two abnormal enhancements and relative stronger intensities of the asymmetrical vibrations at 1534 and 1594 cm-1 of R6G were observed, respectively. These robust free-standing gold nanoparticle films could be easily transferred onto various solid substrates and hold the potential application for electrodes and surface enhanced Raman detectors. This method is applicable for preparation of other nanoparticle free-standing thin films. Electronic supplementary information (ESI) available: Figure S1, the SEM images and photograph of the films prepared from 10 ml, 20 nm gold nanoparticles. Scheme S1, the vibrations of 1534 and 1594 cm-1 of R6G. See DOI: 10.1039/c1nr10578g

Thickness-dependent multiferroic behavior of BiFe0.75Cr0.25O3 films over Pt(111)/Ti/SiO2/Si substrate

NASA Astrophysics Data System (ADS)

William, R. V.; Sivaprakash, P.; Marikani, A.; Reddy, V. Raghavendra; Arumugam, S.

2018-02-01

We present here the experimental results of BiFe0.75Cr0.25O3 (BFCO) thin film deposited by sol-gel spin coating technique directly on Pt(111)/Ti/SiO2/Si substrate at different thicknesses. The crystal structure of BFCO has been investigated using X-ray diffraction which acts as a double perovskite structure with high crystallinity obtained at 400 °C. Further microscopic studies such as scanning electron microscope (SEM) with EDAX, transmission electron microscope (TEM) were also used in identifying the grain size and particle distribution over Pt (111) substrate. Atomic force microscopy (AFM) on the films at a different thickness (- 80 to - 250 nm) reveals that the surface roughness and other amplitude parameters increases with the increase in thickness signifying an increase of grain size with thickness. Increase in grain size and substrate clamping effect between the BFCO film and the substrate induces change in ferroelectric polarization and dielectric properties in relation to thickness effect. Similarly, decrease in magnetization from 9.241 emu/cm3 (- 80 nm) to 5.7791 emu/cm3 (- 250 nm) is attributed to the formation of anti-sites and anti-phase boundaries in the films. In addition, temperature dependence of magnetization reveals ferromagnetic super-exchange interaction of BFCO which is unlike the spin structure of antiferromagnetic BiFeO3.

Impact of AlO x layer on resistive switching characteristics and device-to-device uniformity of bilayered HfO x -based resistive random access memory devices

NASA Astrophysics Data System (ADS)

Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung

2018-06-01

An AlO x layer was deposited on HfO x , and bilayered dielectric films were found to confine the formation locations of conductive filaments (CFs) during the forming process and then improve device-to-device uniformity. In addition, the Ti interposing layer was also adopted to facilitate the formation of oxygen vacancies. As a result, the resistive random access memory (RRAM) device with TiN/Ti/AlO x (1 nm)/HfO x (6 nm)/TiN stack layers demonstrated excellent device-to-device uniformity although it achieved slightly larger resistive switching characteristics, which were forming voltage (V Forming) of 2.08 V, set voltage (V Set) of 1.96 V, and reset voltage (V Reset) of ‑1.02 V, than the device with TiN/Ti/HfO x (6 nm)/TiN stack layers. However, the device with a thicker 2-nm-thick AlO x layer showed worse uniformity than the 1-nm-thick one. It was attributed to the increased oxygen atomic percentage in the bilayered dielectric films of the 2-nm-thick one. The difference in oxygen content showed that there would be less oxygen vacancies to form CFs. Therefore, the random growth of CFs would become severe and the device-to-device uniformity would degrade.

Effect of spacer layer on the magnetization dynamics of permalloy/rare-earth/permalloy trilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Chen, E-mail: ronanluochen@gmail.com; Yin, Yuli; Zhang, Dong

2015-05-07

The permalloy/rare-earth/permalloy trilayers with different types (Gd and Nd) and thicknesses of spacer layer are investigated using frequency dependence of ferromagnetic resonance (FMR) measurements at room temperature, which shows different behaviors with different rare earth spacer layers. By fitting the frequency dependence of the FMR resonance field and linewidth, we find that the in-plane uniaxial anisotropy retains its value for all samples, the perpendicular anisotropy remains almost unchanged for different thickness of Gd layer but the values are tailored by different thicknesses of Nd layer. The Gilbert damping is almost unchanged with different thicknesses of Gd; however, the Gilbert dampingmore » is significantly enhanced from 8.4×10{sup −3} to 20.1×10{sup −3} with 6 nm of Nd and then flatten out when the Nd thickness rises above 6 nm.« less

Ultra thin metallic coatings to control near field radiative heat transfer

NASA Astrophysics Data System (ADS)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Spectral ellipsometry as a method for characterization of nanosized films with ferromagnetic layers

NASA Astrophysics Data System (ADS)

Hashim, H.; Singkh, S. P.; Panina, L. V.; Pudonin, F. A.; Sherstnev, I. A.; Podgornaya, S. V.; Shpetnyi, I. A.; Beklemisheva, A. V.

2017-11-01

Nanosized films with ferromagnetic layers are widely used in nanoelectronics, sensor systems and telecommunications. Their properties may strongly differ from those of bulk materials that is on account of interfaces, intermediate layers and diffusion. In the present work, spectral ellipsometry and magnetooptical methods are adapted for characterization of the optical parameters and magnetization processes in two- and three-layer Cr/NiFe, Al/NiFe and Cr(Al)/Ge/NiFe films onto a sitall substrate for various thicknesses of Cr and Al layers. At a layer thickness below 20 nm, the complex refractive coefficients depend pronouncedly on the thickness. In two-layer films, remagnetization changes weakly over a thickness of the top layer, but the coercive force in three-layer films increases by more than twice upon remagnetization, while increasing the top layer thickness from 4 to 20 nm.

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

Mechanics of an Asymmetric Hard-Soft Lamellar Nanomaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Weichao; Fredrickson, Glenn H.; Kramer, Edward J.

2016-03-24

Nanolayered lamellae are common structures in nanoscience and nanotechnology, but most are nearly symmetric in layer thickness. Here, we report on the structure and mechanics of highly asymmetric and thermodynamically stable soft–hard lamellar structures self-assembled from optimally designed PS 1-(PI-b-PS 2) 3 miktoarm star block copolymers. The remarkable mechanical properties of these strong and ductile PS (polystyrene)-based nanomaterials can be tuned over a broad range by varying the hard layer thickness while maintaining the soft layer thickness constant at 13 nm. Upon deformation, thin PS lamellae (<100 nm) exhibited kinks and predamaged/damaged grains, as well as cavitation in the softmore » layers. In contrast, deformation of thick lamellae (>100 nm) manifests cavitation in both soft and hard nanolayers. In situ tensile-SAXS experiments revealed the evolution of cavities during deformation and confirmed that the damage in such systems reflects both plastic deformation by shear and residual cavities. The aspects of the mechanics should point to universal deformation behavior in broader classes of asymmetric hard–soft lamellar materials, whose properties are just being revealed for versatile applications.« less

Antiferromagnetic layer thickness dependence of noncollinear uniaxial and unidirectional anisotropies in NiFe/FeMn/CoFe trilayers

NASA Astrophysics Data System (ADS)

Choi, Hyeok-Cheol; You, Chun-Yeol; Kim, Ki-Yeon; Lee, Jeong-Soo; Shim, Je-Ho; Kim, Dong-Hyun

2010-06-01

We have investigated the dependence of magnetic anisotropies of the exchange-biased NiFe/FeMn/CoFe trilayers on the antiferromagnetic (AF) layer thickness (tAF) by measuring in-plane angular-dependent ferromagnetic resonance fields. The resonance fields of NiFe and CoFe sublayers are shifted to lower and higher values compared to those of single unbiased ferromagnetic (F) layers, respectively, due to the interfacial exchange coupling when tAF≥2nm . In-plane angular dependence of resonance field reveals that uniaxial and unidirectional anisotropies coexist in the film plane, however, they are not collinear with each other. It is found that these peculiar noncollinear anisotropies significantly depend on tAF . The angle of misalignment displays a maximum around tAF=5nm and converges to zero when tAF is thicker than 10 nm. Contributions from thickness-dependent AF anisotropy and spin frustrations at both F/AF interfaces due to the structural imperfections should be accounted in order to understand the AF-layer thickness dependence of noncollinear magnetic anisotropies.

Exciton-polariton state in nanocrystalline SiC films

NASA Astrophysics Data System (ADS)

Semenov, A. V.; Lopin, A. V.

2016-05-01

We studied the features of optical absorption in the films of nanocrystalline SiC (nc-SiC) obtained on the sapphire substrates by the method of direct ion deposition. The optical absorption spectra of the films with a thickness less than ~500 nm contain a maximum which position and intensity depend on the structure and thickness of the nc-SiC films. The most intense peak at 2.36 eV is observed in the nc-SiC film with predominant 3C-SiC polytype structure and a thickness of 392 nm. Proposed is a resonance absorption model based on excitation of exciton polaritons in a microcavity. In the latter, under the conditions of resonance, there occurs strong interaction between photon modes of light with λph=521 nm and exciton of the 3С polytype with an excitation energy of 2.36 eV that results in the formation of polariton. A mismatch of the frequencies of photon modes of the cavity and exciton explains the dependence of the maximum of the optical absorption on the film thickness.

Surface modifications of ultra-thin gold films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Mallick, P.; Rath, H.; Dash, B. N.; Tripathi, A.; Prakash, Jai; Avasthi, D. K.; Satyam, P. V.; Mishra, N. C.

2010-10-01

Gold films of thickness 10 and 20 nm grown on float glass substrate by thermal evaporation technique were irradiated with 107 MeV Ag8+ and 58 MeV Ni5+ ions at different fluences and characterized by Grazing Incidence X-ray Diffraction (GIXRD) and Atomic Force Microscopy (AFM). The pristine films were continuous and no island structures were found even at these small thicknesses. The surface roughness estimated from AFM data did not show either monotonic increase or decrease with ion fluences. Instead, it increased at low fluences and decreased at high fluences for 20 nm thick film. In the 10 nm film roughness first increased with ion fluence, then decreased and again increased at higher fluences. The pattern of variation, however, was identical for Ni and Ag beams. Both the beams led to the formation of cracks on the film surface at intermediate fluences. The observed ion-irradiation induced thickness dependent topographic modification is explained by the spatial confinement of the energy deposited by ions in the reduced dimension of the films.

Impact of a boron rich layer on minority carrier lifetime degradation in boron spin-on dopant diffused n-type crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-03-01

In the production of n-type crystalline silicon solar cells with boron diffused emitters, the formation of a boron rich layer (BRL) is a common phenomenon and is largely responsible for bulk lifetime degradation. The phenomenon of BRL formation during diffusion of boron spin-on dopant and its impact on bulk lifetime degradation are investigated in this work. The BRL formed beneath the borosilicate glass layer has thicknesses varying from 10 nm-150 nm depending on the diffusion conditions. The effective and bulk minority carrier lifetimes, measured with Al2O3 deposited layers and a quinhydron-methanol solution, show that carrier lifetime degradation is proportional to the BRL thicknesses and their surface recombination velocities. The controlled diffusion processes and different oxidation techniques used in this work can partially reduce the BRL thickness and improve carrier lifetime by more than 10%. But for BRL thicknesses higher than 50 nm, different etching techniques further lower the carrier lifetime and the degradation in the device cannot be recovered.

Charged magnetic domain walls as observed in nanostructured thin films: dependence on both film thickness and anisotropy.

PubMed

Favieres, C; Vergara, J; Madurga, V

2013-02-13

The magnetic domain configurations of soft magnetic, nanostructured, pulsed laser-deposited Co films were investigated. Their dependence on both the thickness t (20 nm ≤ t ≤ 200 nm) and the anisotropy was studied. Charged zigzag walls, with a characteristic saw-tooth vertex angle θ, were observed. θ changed with t from θ ≈ 17° to ≈25°, presenting an intermediate sharp maximum that has not been described before. The reduced length of the zigzag walls also exhibited a peak at t ≈ 70 nm. The relationship between the total reduced length and the density energy of the magnetic wall allowed us to establish a change from a Néel-type to a Bloch-type core of the zigzag walls at this thickness, t ≈ 70 nm. We also accounted for the magnetic energy arising from the surface roughness of the thinner films after imaging the film surface morphologies. Moreover, this distinctive behaviour of the zigzag walls of these low-anisotropy films was compared to that of high-anisotropy films.

Emission Behavior of Fluorescently Labeled Silver Nanoshell: Enhanced Self-Quenching by Metal Nanostructure.

PubMed

Zhang, Jian; Fu, Yi; Lakowicz, Joseph R

2007-02-08

Labeled silica beads with an average diameter of 100 nm were synthesized by incorporating with 20-600 μM Ru(bpy)(3) (2+) complexes. Silver shells were deposited on the beads layer-by-layer with the shell thickness of 5-50 nm. The emission band became narrower and the intensity was enhanced depending on the shell thickness. Self-quenching of the probe was observed at high concentration. Poisson statistics were employed to analyze self-quenching of the fluorophores. The estimated quenching distance was extended from 6 to 16 nm with shell growth from 0 to 50 nm. Moreover, the silver shells were also labeled with Rhodamine 6G. Fluorescence enhancement and reduced lifetime were also observed for silver-silica shell containing R6G. We found that by adjustment of probe concentration and silver shell thickness, a Ru(bpy)(3) (2+)-labeled particle could be 600 times brighter than an isolated Ru(bpy)(3) (2+) molecule. We expect labeled metal core-shell structures can become useful probes for high sensitivity and/or single particle assay.

Fabrication of electrodeposited Co-Pt nano-arrays embedded in an anodic aluminum oxide/Ti/Si substrate

NASA Astrophysics Data System (ADS)

Lim, S. K.; Jeong, G. H.; Park, I. S.; Na, S. M.; Suh, S. J.

An anodic aluminum oxide (AAO) template, which is filled with the Co-Pt alloys, is a promising material for high-density magnetic recording media due to its high magnetic anisotropy and high coercivity. The porous AAO templates were fabricated by the two-step anodizing of 1-μm-thick Al thin film evaporated on top of the titanium layer with the thickness of 250 nm. The AAO template with pore size of approximately 60 nm and aspect ratio of 10 was obtained at voltage of 40 V, temperature of 5 °C, oxalic acid of 0.3 M and widening time of 55 min. Then the thickness of barrier is less than 20 nm. The Co-Pt alloy electrodeposited at pulsed current density, pH of 4 and room temperature was successfully filled in the AAO template with pore size of 80 nm and aspect ratio of 3. Then the Co-Pt alloy with Pt concentration of 45 at% was uniformly filled in the template and the coercivity of 1100 Oe was observed by VSM.

Fluorescent pH sensor based on Ag@SiO2 core-shell nanoparticle.

PubMed

Bai, Zhenhua; Chen, Rui; Si, Peng; Huang, Youju; Sun, Handong; Kim, Dong-Hwan

2013-06-26

We have demonstrated a novel method for the preparation of a fluorescence-based pH sensor by combining the plasmon resonance band of Ag core and pH sensitive dye (HPTS). A thickness-variable silica shell is placed between Ag core and HPTS dye to achieve the maximum fluorescence enhancement. At the shell thickness of 8 nm, the fluorescence intensity increases 4 and 9 times when the sensor is excited at 405 and 455 nm, respectively. At the same time, the fluorescence intensity shows a good sensitivity toward pH value in the range of 5-9, and the ratio of emission intensity at 513 nm excited at 455 nm to that excited at 405 nm versus the pH value in the range of 5-9 is determined. It is believed that the present pH sensor has the potential for determining pH real time in the biological sample.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization

NASA Astrophysics Data System (ADS)

Li, Yi-Shao; Wu, Chun-Yi; Chou, Chia-Hsin; Liao, Chan-Yu; Chuang, Kai-Chi; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung

2018-06-01

A tetraethyl-orthosilicate (TEOS) capping oxide was deposited by low-pressure chemical vapor deposition (LPCVD) on a 200-nm-thick amorphous Si (a-Si) film as a heat reservoir to improve the crystallinity and surface roughness of polycrystalline silicon (poly-Si) formed by continuous-wave laser crystallization (CLC). The effects of four thicknesses of the capping oxide layer to satisfy an antireflection condition, namely, 90, 270, 450, and 630 nm, were investigated. The largest poly-Si grain size of 2.5 × 20 µm2 could be achieved using a capping oxide layer with an optimal thickness of 450 nm. Moreover, poly-Si nanorod (NR) thin-film transistors (TFTs) fabricated using the aforementioned technique exhibited a superior electron field-effect mobility of 1093.3 cm2 V‑1 s‑1 and an on/off current ratio of 2.53 × 109.

Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

2014-05-01

Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm2V-1s-1, a subthreshold swing of 0.29 V/decade and an on/off current ratio of 109.

Quantification of thickness and wrinkling of exfoliated two-dimensional zeolite nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Prashant; Agrawal, Kumar Varoon; Tsapatsis, Michael

Some two-dimensional (2D) exfoliated zeolites are single- or near single-unit cell thick silicates that can function as molecular sieves. Although they have already found uses as catalysts, adsorbents and membranes precise determination of their thickness and wrinkling is critical as these properties influence their functionality. Here we demonstrate a method to accurately determine the thickness and wrinkles of a 2D zeolite nanosheet by comprehensive 3D mapping of its reciprocal lattice. Since the intensity modulation of a diffraction spot on tilting is a fingerprint of the thickness, and changes in the spot shape are a measure of wrinkling, this mapping ismore » achieved using a large-angle tilt-series of electron diffraction patterns. As a result, application of the method to a 2D zeolite with MFI structure reveals that the exfoliated MFI nanosheet is 1.5 unit cells (3.0 nm) thick and wrinkled anisotropically with up to 0.8 nm average surface roughness.« less

Quantification of thickness and wrinkling of exfoliated two-dimensional zeolite nanosheets

DOE PAGES

Kumar, Prashant; Agrawal, Kumar Varoon; Tsapatsis, Michael; ...

2015-05-11

Some two-dimensional (2D) exfoliated zeolites are single- or near single-unit cell thick silicates that can function as molecular sieves. Although they have already found uses as catalysts, adsorbents and membranes precise determination of their thickness and wrinkling is critical as these properties influence their functionality. Here we demonstrate a method to accurately determine the thickness and wrinkles of a 2D zeolite nanosheet by comprehensive 3D mapping of its reciprocal lattice. Since the intensity modulation of a diffraction spot on tilting is a fingerprint of the thickness, and changes in the spot shape are a measure of wrinkling, this mapping ismore » achieved using a large-angle tilt-series of electron diffraction patterns. As a result, application of the method to a 2D zeolite with MFI structure reveals that the exfoliated MFI nanosheet is 1.5 unit cells (3.0 nm) thick and wrinkled anisotropically with up to 0.8 nm average surface roughness.« less

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

2016-04-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

NASA Technical Reports Server (NTRS)

1987-01-01

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lombardo, v.; Barzi, E.; Turrioni, D.

Superconducting magnets with magnetic fields above 20 T will be needed for a Muon Collider and possible LHC energy upgrade. This field level exceeds the possibilities of traditional Low Temperature Superconductors (LTS) such as Nb{sub 3}Sn and Nb{sub 3}Al. Presently the use of high field high temperature superconductors (HTS) is the only option available for achieving such field levels. Commercially available YBCO comes in tapes and shows noticeable anisotropy with respect to field orientation, which needs to be accounted for during magnet design. In the present work, critical current test results are presented for YBCO tape manufactured by Bruker. Shortmore » sample measurements results are presented up to 14 T, assessing the level of anisotropy as a function of field, field orientation and operating temperature.« less

Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems

NASA Astrophysics Data System (ADS)

Endo, Tamio; Horie, Munehiro; Hirate, Naoki; Itoh, Katsutoshi; Yamada, Satoshi; Tada, Masaki; Itoh, Ken-ichi; Sugiyama, Morihiro; Sano, Shinji; Watabe, Kinji

1998-07-01

Thin films of a-oriented YBa2Cu3Ox (YBCO), Ca-doped c-oriented Bi2(Sr,Ca)2CuOx and nondoped c-oriented Bi2Sr2CuOx (Bi2201) were prepared at low temperatures by ion beam sputtering with supply of oxygen molecules or plasma. The plasma enhances crystal growth of the a-YBCO and Ca-doped Bi2201 phases. This can be interpreted in terms of their higher surface energies. The growth and quality of nondoped Bi2201 are improved with the supply of oxygen molecules. This particular result could be interpreted by the collision process between the oxygen molecules and the sputtered particles.

Flux cutting in high- T c superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vlasko-Vlasov, V.; Koshelev, A.; Glatz, A.

We performed magneto-optical study of flux distributions in a YBCO crystal under various applied crossed- field orientations to elucidate the complex nature of magnetic flux cutting in superconductors. Our study reveals unusual vortex patterns induced by the interplay between flux-cutting and vortex pinning. We observe strong flux penetration anisotropy of the normal flux B⊥ in the presence of an in-plane field H|| and associate the modified flux dynamics with staircase structure of tilted vortices in YBCO and the flux-cutting process. We demonstrate that flux-cutting can effectively delay vortex entry in the direction transverse to H||. Finally, we elucidate details ofmore » the vortex-cutting and reconnection process using time-dependent Ginzburg-Landau simulations.« less

Cooper Pair-Like Systems at High Temperature and their Role on Fluctuations Near the Critical Temperature

NASA Astrophysics Data System (ADS)

Ausloos, M.; Dorbolo, S.

A logarithmic behavior is hidden in the linear temperature regime of the electrical resistivity R(T) of some YBCO sample below 2Tc where "pairs" break apart, fluctuations occur and "a gap is opening". An anomalous effect also occurs near 200 K in the normal state Hall coefficient. In a simulation of oxygen diffusion in planar 123 YBCO, an anomalous behavior is found in the oxygen-vacancy motion near such a temperature. We claim that the behavior of the specific heat above and near the critical temperature should be reexamined in order to show the influence and implications of fluctuations and dimensionality on the nature of the phase transition and on the true onset temperature.

Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Baranov, Artem I.; Gudovskikh, Alexander S.; Kudryashov, Dmitry A.; Lazarenko, Alexandra A.; Morozov, Ivan A.; Mozharov, Alexey M.; Nikitina, Ekaterina V.; Pirogov, Evgeny V.; Sobolev, Maxim S.; Zelentsov, Kirill S.; Egorov, Anton Yu.; Darga, Arouna; Le Gall, Sylvain; Kleider, Jean-Paul

2018-04-01

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7-12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm-3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm-3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm-3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3-5) × 1015 cm-3, while the concentration of deep levels becomes 1.3 × 1015 cm-3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.

Influence of Ionic Strength on the Deposition of Metal-Phenolic Networks.

PubMed

Guo, Junling; Richardson, Joseph J; Besford, Quinn A; Christofferson, Andrew J; Dai, Yunlu; Ong, Chien W; Tardy, Blaise L; Liang, Kang; Choi, Gwan H; Cui, Jiwei; Yoo, Pil J; Yarovsky, Irene; Caruso, Frank

2017-10-10

Metal-phenolic networks (MPNs) are a versatile class of self-assembled materials that are able to form functional thin films on various substrates with potential applications in areas including drug delivery and catalysis. Different metal ions (e.g., Fe III , Cu II ) and phenols (e.g., tannic acid, gallic acid) have been investigated for MPN film assembly; however, a mechanistic understanding of the thermodynamics governing MPN formation remains largely unexplored. To date, MPNs have been deposited at low ionic strengths (<5 mM), resulting in films with typical thicknesses of ∼10 nm, and it is still unclear how a bulk complexation reaction results in homogeneous thin films when a substrate is present. Herein we explore the influence of ionic strength (0-2 M NaCl) on the conformation of MPN precursors in solution and how this determines the final thickness and morphology of MPN films. Specifically, the film thickness increases from 10 nm in 0 M NaCl to 12 nm in 0.5 M NaCl and 15 nm in 1 M NaCl, after which the films grow rougher rather than thicker. For example, the root-mean-square roughness values of the films are constant below 1 M NaCl at 1.5 nm; in contrast, the roughness is 3 nm at 1 M NaCl and increases to 5 nm at 2 M NaCl. Small-angle X-ray scattering and molecular dynamics simulations allow for comparisons to be made with chelated metals and polyelectrolyte thin films. For example, at a higher ionic strength (2 M NaCl), sodium ions shield the galloyl groups of tannic acid, allowing them to extend away from the Fe III center and interact with other MPN complexes in solution to form thicker and rougher films. As the properties of films determine their final performance and application, the ability to tune both thickness and roughness using salts may allow for new applications of MPNs.

Color properties of transparent and heat-reflecting MgF2-coated indium-tin-oxide films.

PubMed

Hamberg, I; Granqvist, C G

1983-02-15

The visual appearance of antireflection-coated transparent and heat-reflecting indium-tin-oxide (ITO) films on glass was studied by a colorimetric analysis in which the chromaticity coordinates for transmitted and reflected daylight were evaluated for various film thicknesses. A color purity of <1% in normal transmission and <10% in normal reflection could be achieved with ITO thicknesses in the 220-260- or 335-365-nm ranges and MgF2 thicknesses in the 90-105-nm range. These design criteria yield very efficient window coatings with high visual transmittance, low thermal emittance, and little or no perceived color.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Chi; Aldosary, Mohammed; Jiang, Zilong

A layer-by-layer epitaxial growth up to 227 atomic layers of ferrimagnetic insulator yttrium iron garnet (YIG) thin films is achieved on (110)-oriented gadolinium gallium garnet substrates using pulsed laser deposition. Atomically smooth terraces are observed on YIG films up to 100 nm in thickness. The root-mean-square roughness is as low as 0.067 nm. The easy-axis lies in the film plane, indicating the dominance of shape anisotropy. For (110)-YIG films, there is well-defined two-fold in-plane anisotropy, with the easiest axis directed along [001]. The Gilbert damping constant is determined to be 1.0 × 10{sup −4} for 100 nm thick films.

Plasmon-mediated Enhancement of Rhodamine 6G Spontaneous Emission on Laser-spalled Nanotextures

NASA Astrophysics Data System (ADS)

Kuchmizhak, A. A.; Nepomnyashchii, A. V.; Vitrik, O. B.; Kulchin, Yu. N.

Biosensing characteristics of the laser-spalled nanotextures produced under single-pulse irradiation of a 500-nm thick Ag film surface were assessed by measuring spontaneous emission enhancement of overlaying Rhodamine 6G (Rh6G) molecules utilizing polarization-resolved confocal microspectroscopy technique. Our preliminary study shows for the first time that a single spalled micro-sized crater covered with sub-100 nm sharp tips at a certain excitation conditions provides up to 40-fold plasmon-mediated enhancement of the spontaneous emission from the 10-nm thick Rh6G over-layer indicating high potential of these easy-to-do structures for routine biosensing tasks.

Tensile behavior and flow stress anisotropy of accumulative roll bonded Cu-Nb nanolaminates

DOE PAGES

Nizolek, Thomas; Beyerlein, Irene J.; Mara, Nathan A.; ...

2016-02-01

The flow stress, ductility, and in-plane anisotropy are evaluated for bulk accumulative roll bonded copper-niobium nanolaminates with layer thicknesses ranging from 1.8 μm to 15 nm. Uniaxial tensile tests conducted parallel to the rolling direction and transverse direction demonstrate that ductility generally decreases with decreasing layer thickness; however, at 30 nm, both high strengths (1200 MPa) and significant ductility (8%) are achieved. The yield strength increases monotonically with decreasing layer thickness, consistent with the Hall-Petch relationship, and significant in-plane flow stress anisotropy is observed. As a result, Taylor polycrystal modeling is used to demonstrate that crystallographic texture is responsible formore » the in-plane anisotropy and that the effects of texture dominate even at nanoscale layer thicknesses.« less

Impact of boron rich layer on performance degradation in boric acid diffused emitters for n-type crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2018-01-01

Boron rich layer (BRL) formed beneath the borosilicate glass layer during p-type emitter formation is an undesirable phenomenon. It influences different cell parameters and can degrade the device performance. In this work, the device degradation study is done for different BRL thicknesses produced with different concentrations of the boric acid dopant source. The bulk carrier lifetime reduces to more than 75% and emitter saturation current density becomes more than 10-12 mA cm-2 for 60 nm of BRL thickness. The observed J sc and V oc values become zero for BRL thicknesses higher than 40 nm as seen in this work and the device properties could not be enhanced. So, higher thicknesses of BRL should be avoided.

Skin color and tissue thickness effects on transmittance, reflectance, and skin temperature when using 635 and 808 nm lasers in low intensity therapeutics.

PubMed

Souza-Barros, Leanna; Dhaidan, Ghaith; Maunula, Mikko; Solomon, Vaeda; Gabison, Sharon; Lilge, Lothar; Nussbaum, Ethne L

2018-04-01

To examine the role of skin color and tissue thickness on transmittance, reflectance, and skin heating using red and infrared laser light. Forty volunteers were measured for skin color and skin-fold thickness at a standardized site near the elbow. Transmittance, reflectance and skin temperature were recorded for energy doses of 2, 6, 9, and 12 Joules using 635 nm (36 mW) and 808 nm (40 mW) wavelength laser diodes with irradiances within American National Standards Institute safety guidelines (4.88 mm diameter, 0.192 W/cm 2 and 4.88 mm diameter, 0.214 W/cm 2 , respectively). The key factors affecting reflectance to an important degree were skin color and wavelength. However, the skin color effects were different for the two wavelengths: reflectance decreased for darker skin with a greater decrease for red light than near infrared light. Transmittance was greater using 808 nm compared with 635 nm. However, the effect was partly lost when the skin was dark rather than light, and was increasingly lost as tissue thickness increased. Dose had an increasing effect on temperature (0.7-1.6°C across the 6, 9, and 12 J doses); any effects of wavelength, skin color, and tissue thickness were insignificant compared to dose effects. Subjects themselves were not aware of the increased skin temperature. Transmittance and reflectance changes as a function of energy were very small and likely of no clinical significance. Absorption did not change with higher energy doses and increasing temperature. Skin color and skin thickness affect transmittance and reflectance of laser light and must be accounted for when selecting energy dose to ensure therapeutic effectiveness at the target tissue. Skin heating appears not to be a concern when using 635 and 808 nm lasers at energy doses of up to 12 J and irradiance within American National Standards Institute standards. Photobiomodulation therapy should never exceed the American National Standards Institute recommendation for the maximum permissible exposure to the skin. Lasers Surg. Med. 50:291-301, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Extracting interface locations in multilayer polymer waveguide films using scanning angle Raman spectroscopy

DOE PAGES

Bobbitt, Jonathan M.; Smith, Emily A.

2017-11-09

There is an increasing demand for nondestructive in situ techniques that measure chemical content, total thickness, and interface locations for multilayer polymer films, and SA Raman spectroscopy in combination with appropriate data models can provide this information. A scanning angle (SA) Raman spectroscopy method was developed to measure the chemical composition of multilayer polymer waveguide films and to extract the location of buried interfaces between polymer layers with 7–80-nm axial spatial resolution. The SA Raman method measures Raman spectra as the incident angle of light upon a prism-coupled thin film is scanned. Six multilayer films consisting of poly(methyl methacrylate)/polystyrene ormore » poly(methyl methacrylate)/polystyrene/poly(methyl methacrylate) were prepared with total thicknesses ranging from 330-1260 nm. The interface locations were varied by altering the individual layer thicknesses between 140-680 nm. The Raman amplitude ratio of the 1605 cm -1 peak for PS and 812 cm -1 peak for PMMA was used in calculations of the electric field intensity within the polymer layers to model the SA Raman data and extract the total thickness and interface locations. There is an average 8% and 7% difference in the measured thickness between the SA Raman and profilometry measurements for bilayer and trilayer films, respectively.« less

Surface initiated atom transfer radical polymerization grafting of sodium styrene sulfonate from titanium and silicon substrates.

PubMed

Foster, Rami N; Keefe, Andrew J; Jiang, Shaoyi; Castner, David G

2013-11-01

This study investigates the grafting of poly-sodium styrene sulfonate (pNaSS) from trichlorosilane/10-undecen-1-yl 2-bromo-2-methylpropionate functionalized Si and Ti substrates by atom transfer radical polymerization (ATRP). The composition, molecular structure, thickness, and topography of the grafted pNaSS films were characterized with x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), variable angle spectroscopic ellipsometry (VASE), and atomic force microscopy (AFM), respectively. XPS and ToF-SIMS results were consistent with the successful grafting of a thick and uniform pNaSS film on both substrates. VASE and AFM scratch tests showed the films were between 25 and 49 nm thick on Si, and between 13 and 35 nm thick on Ti. AFM determined root-mean-square roughness values were ∼2 nm on both Si and Ti substrates. Therefore, ATRP grafting is capable of producing relatively smooth, thick, and chemically homogeneous pNaSS films on Si and Ti substrates. These films will be used in subsequent studies to test the hypothesis that pNaSS-grafted Ti implants preferentially adsorb certain plasma proteins in an orientation and conformation that modulates the foreign body response and promotes formation of new bone.

Extracting interface locations in multilayer polymer waveguide films using scanning angle Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobbitt, Jonathan M.; Smith, Emily A.

There is an increasing demand for nondestructive in situ techniques that measure chemical content, total thickness, and interface locations for multilayer polymer films, and SA Raman spectroscopy in combination with appropriate data models can provide this information. A scanning angle (SA) Raman spectroscopy method was developed to measure the chemical composition of multilayer polymer waveguide films and to extract the location of buried interfaces between polymer layers with 7–80-nm axial spatial resolution. The SA Raman method measures Raman spectra as the incident angle of light upon a prism-coupled thin film is scanned. Six multilayer films consisting of poly(methyl methacrylate)/polystyrene ormore » poly(methyl methacrylate)/polystyrene/poly(methyl methacrylate) were prepared with total thicknesses ranging from 330-1260 nm. The interface locations were varied by altering the individual layer thicknesses between 140-680 nm. The Raman amplitude ratio of the 1605 cm -1 peak for PS and 812 cm -1 peak for PMMA was used in calculations of the electric field intensity within the polymer layers to model the SA Raman data and extract the total thickness and interface locations. There is an average 8% and 7% difference in the measured thickness between the SA Raman and profilometry measurements for bilayer and trilayer films, respectively.« less

Facile Synthesis of Thick Films of Poly(methyl methacrylate), Poly(styrene), and Poly(vinyl pyridine) from Au Surfaces

PubMed Central

Saha, Sampa

2011-01-01

Atom transfer radical polymerization (ATRP) is commonly used to grow polymer brushes from Au surfaces, but the resulting film thicknesses are usually significantly less than with ATRP from SiO2 substrates. On Au, growth of poly(methyl methacrylate) (PMMA) blocks from poly(tert-butyl acrylate) brushes occurs more rapidly than growth of PMMA from initiator monolayers, suggesting that the disparity between growth rates from Au and SiO2 stems from the Au surface. Radical quenching by electron transfer from Au is probably not the termination mechanism because polymerization from thin, cross-linked initiators gives film thicknesses that are essentially the same as the thicknesses of films grown from SiO2 under the same polymerization conditions. However, this result is consistent with termination through desorption of thiols from non-cross-linked films, and reaction of these thiols with growing polymer chains. The enhanced stability of cross-linked initiators allows ATRP at temperatures up to ~100 °C and enables the growth of thick films of PMMA (350 nm), polystyrene (120 nm) and poly(vinyl pyridine) (200 nm) from Au surfaces in 1 hour. At temperatures >100 °C, the polymer brush layers delaminate as large area films. PMID:21728374

Surface initiated atom transfer radical polymerization grafting of sodium styrene sulfonate from titanium and silicon substrates

PubMed Central

Foster, Rami N.; Keefe, Andrew J.; Jiang, Shaoyi; Castner, David G.

2013-01-01

This study investigates the grafting of poly-sodium styrene sulfonate (pNaSS) from trichlorosilane/10-undecen-1-yl 2-bromo-2-methylpropionate functionalized Si and Ti substrates by atom transfer radical polymerization (ATRP). The composition, molecular structure, thickness, and topography of the grafted pNaSS films were characterized with x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), variable angle spectroscopic ellipsometry (VASE), and atomic force microscopy (AFM), respectively. XPS and ToF-SIMS results were consistent with the successful grafting of a thick and uniform pNaSS film on both substrates. VASE and AFM scratch tests showed the films were between 25 and 49 nm thick on Si, and between 13 and 35 nm thick on Ti. AFM determined root-mean-square roughness values were ∼2 nm on both Si and Ti substrates. Therefore, ATRP grafting is capable of producing relatively smooth, thick, and chemically homogeneous pNaSS films on Si and Ti substrates. These films will be used in subsequent studies to test the hypothesis that pNaSS-grafted Ti implants preferentially adsorb certain plasma proteins in an orientation and conformation that modulates the foreign body response and promotes formation of new bone. PMID:24482558

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

Short-length and high-density TiO2 nanorod arrays for the efficient charge separation interface in perovskite solar cells

NASA Astrophysics Data System (ADS)

Xiao, Guannan; Shi, Chengwu; Zhang, Zhengguo; Li, Nannan; Li, Long

2017-05-01

The TiO2 nanorod arrays with the length of 70 nm, the diameter of 20 nm, and the areal density of 1000 μm-2 were firstly prepared by the hydrothermal method using the aqueous grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170 °C for 60 min. Over-500 nm-thickness CH3NH3PbI3-xBrx absorber layers were successfully obtained by sequential deposition routes using 1.7 M PbI2·DMSO complex precursor solution and 0.465 M isopropanol solution of the methylammonium halide mixture with the molar ratio of CH3NH3I/CH3NH3Br=85/15. The perovskite solar cells based on the TiO2 nanorod array and 560 nm-thickness CH3NH3PbI3-xBrx absorber layer exhibited the best photoelectric conversion efficiency (PCE) of 15.93%, while the corresponding planar perovskite solar cells without the TiO2 nanorod array and with 530 nm-thickness CH3NH3PbI3-xBrx absorber layer gave the best PCE of 12.82% at the relative humidity of 50-54%.

Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device

NASA Astrophysics Data System (ADS)

Kim, MyoungSoo; Kim, HakJoon; Shim, KewChan; Jeon, JeHa; Gil, MyungGoon; Song, YongWook; Enomoto, Tomoyuki; Sakaguchi, Takahiro; Nakajima, Yasuyuki

2005-05-01

A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the substrate. One approach to reduce the light reflection is the use of bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer. The BARC technology has been utilized for a few years to minimize the reflectivity. As the chip size is reduced to sub 100nm, the photoresist thickness has to decrease with the aspect ratio being less than 3.0. Therefore, new Organic BARC is strongly required which has the minimum reflectivity with thinner BARC thickness and higher etch selectivity toward resists. Hynix Semiconductor Inc., Nissan Chemical Industries, Ltd., and Brewer Science, Inc. have developed the advanced Organic BARC for achieving the above purpose. As a result, the suitable high performance 248nm Organic BARCs, NCA series, were achieved. Using CF4 gas as etchant, the plasma etch rate of NCA series is about 1.4 times higher than that of conventional 248nm resists. NCA series can be minimizing the substrate reflectivity at below 45nm BARC thickness. NCA series show the excellent litho performance and coating property on real device.

Dependence of spin pumping and spin transfer torque upon Ni81Fe19 thickness in Ta/Ag /Ni 81Fe19/Ag/Co 2MnGe /Ag /Ta spin-valve structures

NASA Astrophysics Data System (ADS)

Durrant, C. J.; Shelford, L. R.; Valkass, R. A. J.; Hicken, R. J.; Figueroa, A. I.; Baker, A. A.; van der Laan, G.; Duffy, L. B.; Shafer, P.; Klewe, C.; Arenholz, E.; Cavill, S. A.; Childress, J. R.; Katine, J. A.

2017-10-01

Spin pumping has been studied within Ta / Ag / Ni81Fe19 (0-5 nm) / Ag (6 nm) / Co2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni81Fe19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNA-FMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfer torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and superparamagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR linewidth that we attribute to improved interface quality. This study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.

Magneto-optical Kerr rotation and color in ultrathin lossy dielectric

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Hai; Qu, Xin; Zhou, Yun song; Li, Li na

2017-05-01

Ultra-thin optical coating comprising nanometer-thick silicon absorbing films on iron substrates can display strong optical interference effects. A resonance peak of ∼1.6^\\circ longitudinal Kerr rotation with the silicon thickness of ∼47 \\text{nm} was found at the wavelength of 660 nm. The optical properties of silicon thin films were well controlled by the sputtering power. Non-iridescence color exhibition and Kerr rotation enhancement can be manipulated and encoded individually.

Irradiation-induced creep in metallic nanolaminates characterized by In situ TEM pillar nanocompression

DOE PAGES

Dillon, Shen J.; Bufford, Daniel C.; Jawaharram, Gowtham S.; ...

2017-04-13

Our work reports on irradiation-induced creep (IIC) measured on nanolaminate (Cu-W and Ni-Ag) and nanocrystalline alloys (Cu-W) at room temperature using a combination of heavy ion irradiation and nanopillar compression performed concurrently in situ in a transmission electron microscope. Furthermore, we observed appreciable IIC in multilayers with 50 nm layer thicknesses at high stress, ≈½ the yield strength, but not in multilayers with only 5 nm layer thicknesses.

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

NASA Astrophysics Data System (ADS)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2017-10-01

We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

NASA Astrophysics Data System (ADS)

Kwon, Yongbeom; Lee, Geonyeop; Oh, Sooyeoun; Kim, Jihyun; Pearton, Stephen J.; Ren, Fan

2017-03-01

We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its thickness. Since β-Ga2O3 is not a van der Waals material, it is challenging to obtain ultra-thin flakes below a thickness of 100 nm. In this study, an etch rate of approximately 16 nm/min was achieved at a power of 200 W with a flow of 50 sccm of SF6, and under these conditions, thinning of β-Ga2O3 flakes from 300 nm down to ˜60 nm was achieved with smooth morphology. We believe that the reaction between SF6 and Ga2O3 results in oxygen and volatile oxygen fluoride compounds, and non-volatile compounds such as GaFX that can be removed by ion bombardment. The opto-electrical properties were also characterized by fabricating solar-blind photodetectors using the plasma-thinned β-Ga2O3 flakes; these detectors showed fast response and decay with excellent responsivity and selectivity. Our results pave the way for tuning the thickness of two-dimensional materials by using this scalable, industry-compatible dry etching technique.

Elastic and fracture properties of free-standing amorphous ALD Al2O3 thin films measured with bulge test

NASA Astrophysics Data System (ADS)

Rontu, Ville; Nolvi, Anton; Hokkanen, Ari; Haeggström, Edward; Kassamakov, Ivan; Franssila, Sami

2018-04-01

We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atomic layer deposition (ALD) with bulge test technique using a free-standing thin film membrane and extended applicability of bulge test technique. Elastic modulus was determined to be 115 GPa for a 50 nm thick film and 170 GPa for a 15 nm thick film. Residual stress was 142 MPa in the 50 nm Al2O3 film while it was 116 MPa in the 15 nm Al2O3 film. Density was 3.11 g cm‑3 for the 50 nm film and 3.28 g cm‑3 for the 15 nm film. Fracture strength at 100 hPa s‑1 pressure ramp rate was 1.72 GPa for the 50 nm film while for the 15 nm film it was 4.21 GPa, almost 2.5-fold. Fracture strength was observed to be positively strain-rate dependent. Weibull moduli of these films were very high being around 50. The effective volume of a circular film in bulge test was determined from a FEM model enabling future comparison of fracture strength data between different techniques.