Dynamic structural colour using vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Wilson, K.; Marocico, C. A.; Bradley, A. L.

2018-06-01

A thin film stack consisting of layers of indium tin oxide (ITO) with an intermediate vanadium oxide (VO2) layer on an optically thick silver film has been investigated for dynamic structural colour. The structure benefits from the phase change properties of VO2. Compared with other phase change materials, such as germanium antimony telluride (GST), VO2 can be offered as a lower power consumption alternative. It has been overlooked in the visible spectral range due to its smaller refractive index change below 700 nm. We demonstrate that the sensitivity of the visible reflectance spectrum to the change in phase of a 30 nm VO2 layer is increased after it is incorporated in a thin film stack, with performance comparable to other phase change materials. The extent to which dynamic tuning of the reflectance spectra of ITO–VO2–ITO–Ag thin film stacks can be exploited for colour switching is reported, with approximately 25% change in reflectance demonstrated at 550 nm. Inclusion of a top ITO layer is also shown to improve the chromaticity change on phase transition.

Spin-filter specular spin valves

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.; Jibouri, A. A.; Zheng, Yaunkai

2002-01-01

Both a thin free layer and high magnetoresistance (MR) ratio are required in spin valves for high magnetic density recording heads. In traditional spin valve structures, reducing the free layer normally results in a reduction in MR. We report here on a spin-filter specular spin valve with structure Ta 3.5 nm/NiFe 2 nm/IrMn 6 nm/CoFe 1.5 nm/Nol/CoFe 2 nm/Cu 2.2 nm/CoFe tF/Cu tSF/Nol2/Ta 3 nm, which is demonstrated to maintain MR ratio higher than 12% even when the CoFe free layer is reduced to 1 nm. The semiclassical Boltzmann transport equation was used to simulate MR ratio. An optimized MR ratio of ˜14.5% was obtained when tF was about 1.5 nm and tSF about 1.0 nm as a result of the balance between the increase in electron mean free path difference and current shunting through conducting layer. It is found that the Cu enhancing layer not only enhances the MR ratio but also improves soft magnetic properties of CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibits a low coercivity of ˜3 Oe even after annealing at 270 °C for 7 h in a field of 1 kOe. Furthermore, the interlayer coupling field Hint between free layer and pinned layer can be controlled by balancing the Rudermann-Kittel-(Kasuya)-Yosida and magnetostatic coupling. Such a thin soft CoFe free layer is particularly attractive for high density read sensor application.

Effect of ZrO2 film thickness on the photoelectric properties of mixed-cation perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Yanyan; Zhao, Li; Wei, Shoubin; Xiao, Meng; Dong, Binghai; Wan, Li; Wang, Shimin

2018-05-01

In this work, perovskite solar cells (PSCs) were fabricated in the ambient air, with a scaffold layer composed of TiO2/ZrO2 double layer as the mesoscopic layer and carbon as the counter electrode. The effect of ZrO2 thin film thickness on the photovoltaic performances of PSCs was also studied in detail. Results showed that the photoelectric properties of as-prepared PSCs largely depend on the thin film thickness due to a series of factors, including surface roughness, charge transport resistance, and electron-hole recombination rate. The power conversion efficiency of PSCs increased from 8.37% to 11.33% by varying the thin film thickness from 75 nm to 305 nm, and the optimal power conversion efficiency was realized up to the 11.33% with a thin film thickness of 167 nm. This research demonstrates a promising route for the high-efficiency and low-cost photovoltaic technology.

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

PubMed

Kim, Seong Keun; Han, Sora; Jeon, Woojin; Yoon, Jung Ho; Han, Jeong Hwan; Lee, Woongkyu; Hwang, Cheol Seong

2012-09-26

Rutile structured Al-doped TiO(2) (ATO) and TiO(2) films were grown on bimetal electrodes (thin Ru/thick TiN, Pt, and Ir) for high-performance capacitors. The work function of the top Ru layer decreased on TiN and increased on Pt and Ir when it was thinner than ~2 nm, suggesting that the lower metal within the electrodes influences the work function of the very thin Ru layer. The use of the lower electrode with a high work function for bottom electrode eventually improves the leakage current properties of the capacitor at a very thin Ru top layer (≤2 nm) because of the increased Schottky barrier height at the interface between the dielectric and the bottom electrode. The thin Ru layer was necessary to achieve the rutile structured ATO and TiO(2) dielectric films.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

BiVO4 thin film photoanodes grown by chemical vapor deposition.

PubMed

Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

2014-01-28

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

PubMed Central

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-01-01

This paper presents the preparation of high-quality vanadium dioxide (VO2) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO2 thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc) of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications. PMID:28773679

Unexpected behavior of ultra-thin films of blends of polystyrene/poly(vinyl methyl ether) studied by specific heat spectroscopy

NASA Astrophysics Data System (ADS)

Madkour, Sherif; Szymoniak, Paulina; Schick, Christoph; Schönhals, Andreas

2017-05-01

Specific heat spectroscopy (SHS) employing AC nanochip calorimetry was used to investigate the glassy dynamics of ultra-thin films (thicknesses: 10 nm-340 nm) of a polymer blend, which is miscible in the bulk. In detail, a Poly(vinyl methyl ether) (PVME)/Polystyrene (PS) blend with the composition of 25/75 wt. % was studied. The film thickness was controlled by ellipsometry while the film topography was checked by atomic force microscopy. The results are discussed in the framework of the balance between an adsorbed and a free surface layer on the glassy dynamics. By a self-assembling process, a layer with a reduced mobility is irreversibly adsorbed at the polymer/substrate interface. This layer is discussed employing two different scenarios. In the first approach, it is assumed that a PS-rich layer is adsorbed at the substrate. Whereas in the second approach, a PVME-rich layer is suggested to be formed at the SiO2 substrate. Further, due to the lower surface tension of PVME, with respect to air, a nanometer thick PVME-rich surface layer, with higher molecular mobility, is formed at the polymer/air interface. By measuring the glassy dynamics of the thin films of PVME/PS in dependence on the film thickness, it was shown that down to 30 nm thicknesses, the dynamic Tg of the whole film was strongly influenced by the adsorbed layer yielding a systematic increase in the dynamic Tg with decreasing the film thickness. However, at a thickness of ca. 30 nm, the influence of the mobile surface layer becomes more pronounced. This results in a systematic decrease in Tg with the further decrease of the film thickness, below 30 nm. These results were discussed with respect to thin films of PVME/PS blend with a composition of 50/50 wt. % as well as literature results.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

High performance novel gadolinium doped ceria/yttria stabilized zirconia/nickel layered and hybrid thin film anodes for application in solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Garcia-Garcia, F. J.; Beltrán, A. M.; Yubero, F.; González-Elipe, A. R.; Lambert, R. M.

2017-09-01

Magnetron sputtering under oblique angle deposition was used to produce Ni-containing ultra thin film anodes comprising alternating layers of gadolinium doped ceria (GDC) and yttria stabilized zirconia (YSZ) of either 200 nm or 1000 nm thickness. The evolution of film structure from initial deposition, through calcination and final reduction was examined by XRD, SEM, TEM and TOF-SIMS. After subsequent fuel cell usage, the porous columnar architecture of the two-component layered thin film anodes was maintained and their resistance to delamination from the underlying YSZ electrolyte was superior to that of corresponding single component Ni-YSZ and Ni-GDC thin films. Moreover, the fuel cell performance of the 200 nm layered anodes compared favorably with conventional commercially available thick anodes. The observed dependence of fuel cell performance on individual layer thicknesses prompted study of equivalent but more easily fabricated hybrid anodes consisting of simultaneously deposited Ni-GDC and Ni-YSZ, which procedure resulted in exceptionally intimate mixing and interaction of the components. The hybrids exhibited very unusual and favorable Isbnd V characteristics, along with exceptionally high power densities at high currents. Their discovery is the principal contribution of the present work.

Crystalline Stratification in Semiconducting Polymer Thin Film Quantified by Grazing Incidence X-ray Scattering

NASA Astrophysics Data System (ADS)

Gann, Eliot; Caironi, Mario; Noh, Yong-Young; Kim, Yun-Hi; McNeill, Christopher R.

The depth dependence of crystalline structure within thin films is critical for many technological applications, but has been impossible to measure directly using common techniques. In this work, by monitoring diffraction peak intensity and location and utilizing the highly angle-dependent waveguiding effects of X-rays near grazing incidence we quantitatively measure the thickness, roughness and orientation of stratified crystalline layers within thin films of a high-performance semiconducting polymer. In particular, this diffractive X-ray waveguiding reveals a self-organized 5-nm-thick crystalline surface layer with crystalline orientation orthogonal to the underlying 65-nm-thick layer. While demonstrated for an organic semiconductor film, this approach is applicable to any thin film material system where stratified crystalline structure and orientation can influence important interfacial processes such as charge injection and field-effect transport.

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

PubMed

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations

NASA Astrophysics Data System (ADS)

Bai, Xiaoyuan; Shuai, Yao; Gong, Chaoguan; Wu, Chuangui; Luo, Wenbo; Böttger, Roman; Zhou, Shengqiang; Zhang, Wanli

2018-03-01

Single crystalline 128°Y-cut LiNbO3 thin films with a thickness of 670 nm are fabricated onto Si substrates by means of crystal ion slicing (CIS) technique, adhesive wafer bonding using BCB as the medium layer to alleviate the large thermal coefficient mismatch between LiNbO3 and Si, and the X-ray diffraction pattern indicates the exfoliated thin films have good crystalline quality. The LiNbO3 thin films are modified by low energy Ar+ irradiation, and the surface roughness of the films is decreased from 8.7 nm to 3.4 nm. The sputtering of the Ar+ irradiation is studied by scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy, and the results show that an amorphous layer exists at the surface of the exfoliated film, which can be quickly removed by Ar+ irradiation. A two-stage etching mechanism by Ar+ irradiation is demonstrated, which not only establishes a new non-contact surface polishing method for the CIS-fabricated single crystalline thin films, but also is potentially useful to remove the residue damage layer produced during the CIS process.

Resistivity scaling due to electron surface scattering in thin metal layers

NASA Astrophysics Data System (ADS)

Zhou, Tianji; Gall, Daniel

2018-04-01

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of thin metal layers is investigated using nonequilibrium Green's function density functional transport simulations. Cu(001) thin films with thickness d =1 -2 nm are used as a model system, employing a random one-monolayer-high surface roughness and frozen phonons to cause surface and bulk scattering, respectively. The zero-temperature resistivity increases from 9.7 ±1.0 μ Ω cm at d =1.99 nm to 18.7 ±2.6 μ Ω cm at d =0.9 0 nm, contradicting the asymptotic T =0 prediction from the classical Fuchs-Sondheimer model. At T =9 00 K, ρ =5.8 ±0.1 μ Ω cm for bulk Cu and ρ =13.4 ±1.1 and 22.5 ±2.4 μ Ω cm for layers with d =1.99 and 0.90 nm, respectively, indicating an approximately additive phonon contribution which, however, is smaller than for bulk Cu or atomically smooth layers. The overall data indicate that the resistivity contribution from surface scattering is temperature-independent and proportional to 1 /d , suggesting that it can be described using a surface-scattering mean-free path λs for 2D transport which is channel-independent and proportional to d . Data fitting indicates λs=4 ×d for the particular simulated Cu(001) surfaces with a one-monolayer-high surface roughness. The 1 /d dependence deviates considerably from previous 1 /d2 predictions from quantum models, indicating that the small-roughness approximation in these models is not applicable to very thin (<2 nm) layers, where the surface roughness is a considerable fraction of d .

Synthesis of bimetallic nanostructures by nanosecond laser ablation of multicomponent thin films in water

NASA Astrophysics Data System (ADS)

Nikov, R. G.; Nedyalkov, N. N.; Atanasov, P. A.; Karashanova, D. B.

2018-03-01

The paper presents results on nanosecond laser ablation of thin films immersed in a liquid. The thin films were prepared by consecutive deposition of layers of different metals by thermal evaporation (first layer) and classical on-axis pulsed laser deposition (second layer); Ni/Au, Ag/Au and Ni/Ag thin films were thus deposited on glass substrates. The as-prepared films were then placed at the bottom of a glass vessel filled with double distilled water and irradiated by nanosecond laser pulses delivered by a Nd:YAG laser system at λ = 355 nm. This resulted in the formation of colloids of the thin films’ material. We also compared the processes of ablation of a bulk target and a thin film in the liquid by irradiating a Au target and a Au thin film by the same laser wavelength and fluence (λ = 355 nm, F = 5 J/cm2). The optical properties of the colloids were evaluated by optical transmittance measurements in the UV– VIS spectral range. Transmission electron microscopy was employed to estimate the particles’ size distribution.

Nanometer-Thick Yttrium Iron Garnet Film Development and Spintronics-Related Study

NASA Astrophysics Data System (ADS)

Chang, Houchen

In the last decade, there has been a considerable interest in using yttrium iron garnet (Y3Fe5O12, YIG) materials for magnetic insulator-based spintronics studies. This interest derives from the fact that YIG materials have very low intrinsic damping. The development of YIG-based spintronics demands YIG films that have a thickness in the nanometer (nm) range and at the same time exhibit low damping similar to single-crystal YIG bulk materials. This dissertation reports comprehensive experimental studies on nm-thick YIG films by magnetron sputtering techniques. Optimization of sputtering control parameters and post-deposition annealing processes are discussed in detail. The feasibility of low-damping YIG nm-thick film growth via sputtering is demonstrated. A 22.3-nm-thick YIG film, for example, shows a Gilbert damping constant of less than 1.0 x 10-4. The demonstration is of great technological significance because sputtering is a thin film growth technique most widely used in industry. The spin Seebeck effect (SSE) refers to the generation of spin voltage in a ferromagnet (FM) due to a temperature gradient. The spin voltage can produce a pure spin current into a normal metal (NM) that is in contact with the FM. Various theoretical models have been proposed to interpret the SSE, although a complete understanding of the effect has not been realized yet. In this dissertation the study of the role of damping on the SSE in YIG thin films is conducted for the first time. With the thin film development method mentioned in the last paragraph, a series of YIG thin films showing very similar structural and static magnetic properties but rather different Gilbert damping values were prepared. A Pt capping layer was grown on each YIG film to probe the strength of the SSE. The experimental data show that the YIG films with a smaller intrinsic Gilbert damping shows a stronger SSE. The majority of the previous studies on YIG spintronics utilized YIG films that were grown on single-crystal Gd3Ga5O 12 (GGG) substrates first and then capped with either a thin NM layer or a thin topological insulator (TI) layer. The use of the GGG substrates is crucial in terms of realizing high-quality YIG films, because GGG not only has a crystalline structure almost perfectly matching that of YIG but is also extremely stable at high temperature in oxygen that is the condition needed for YIG crystallization. The feasibility of growing high-quality YIG thin films on Pt thin films is explored in this dissertation. This work is of great significance because it enables the fabrication of sandwich-like NM/YIG/NM or NM/YIG/TI structures. Such tri-layered structures will facilitate various interesting fundamental studies as well as device developments. The demonstration of a magnon-mediated electric current drag phenomenon is presented as an example for such tri-layered structures.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Polymer mediated layer-by-layer assembly of different shaped gold nanoparticles.

PubMed

Budy, Stephen M; Hamilton, Desmond J; Cai, Yuheng; Knowles, Michelle K; Reed, Scott M

2017-02-01

Gold nanoparticles (GNPs) have a wide range of properties with potential applications in electronics, optics, catalysis, and sensing. In order to demonstrate that dense, stable, and portable samples could be created for these applications, multiple layers of GNPs were assembled via drop casting on glass substrates by layer-by-layer (LBL) techniques. Two cationic polyelectrolytes, poly(diallyldimethylammonium chloride) and polyethyleneimine, one anionic polyelectrolyte, poly(sodium 4-styrene sulfonate), and one neutral polymer, polyvinylpyrrolidone, were combined with four different shapes of GNPs (spherical, rod, triangular prismatic, and octahedral) to prepare thin films. A subset of these polymer nanoparticle combinations were assembled into thin films. Synthesized GNPs were characterized via dynamic light scattering, UV-vis spectroscopy, and transmission electron microscopy and the LBL thin films were characterized using UV-vis spectroscopy and atomic force microscopy. Sensing applications of the nanoparticles in solution and thin films were tested by monitoring the localized surface plasmon resonance of the GNPs. LBL thin films were prepared ranging from 25 to 100 layers with optical densities at plasmon from 0.5 to 3.0. Sensitivity in solutions ranged from 14 to 1002nm/refractive index units (RIU) and films ranged from 18.8 to 135.1nm/RIU suggesting reduced access to the GNPs within the films. Copyright © 2016 Elsevier Inc. All rights reserved.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

NASA Astrophysics Data System (ADS)

Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

2017-02-01

This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

Modes of interaction between nanostructured metal and a conducting mirror as a function of separation and incident polarization

NASA Astrophysics Data System (ADS)

Bonnie, F.; Arnold, M. D.; Smith, G. B.; Gentle, A. R.

2013-09-01

The optical resonances that occur in nanostructured metal layers are modulated in thin film stacks if the nanostructured layer is separated from a reflecting conducting layer by various thicknesses of thin dielectric. We have measured and modeled the optical response of interacting silver layers, with alumina spacer thickness ranging from a few nm to 50 nm, for s- and p-polarized incident light, and a range of incident angles. Standard thin film models, including standard effective medium models for the nanostructured layer, will break down for spacer thickness below a critical threshold. For example, with polarisation in the film plane and some nano-islands, it may occur at around 10 nm depending on spacer refractive index. Of particular interest here are novel effects observed with the onset of percolation in the nanolayer. Hot spot effects can be modified by nearby mirrors. Other modes to consider include (a) a two-particle mode involving a particle and its mirror image (b) A Fano resonance from hybridisation of localized and de-localised plasmon modes (c) a Babinet's core-(partial) shell particle with metal core-dielectric shell in metal (d) spacing dependent phase modulation (e) the impact of field gradients induced by the mirror at the nano-layer.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Layer-by-layer modification of thin-film metal-semiconductor multilayers with ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Romashevskiy, S. A.; Tsygankov, P. A.; Ashitkov, S. I.; Agranat, M. B.

2018-05-01

The surface modifications in a multilayer thin-film structure (50-nm alternating layers of Si and Al) induced by a single Gaussian-shaped femtosecond laser pulse (350 fs, 1028 nm) in the air are investigated by means of atomic-force microscopy (AFM), scanning electron microscopy (SEM), and optical microscopy (OM). Depending on the laser fluence, various modifications of nanometer-scale metal and semiconductor layers, including localized formation of silicon/aluminum nanofoams and layer-by-layer removal, are found. While the nanofoams with cell sizes in the range of tens to hundreds of nanometers are produced only in the two top layers, layer-by-layer removal is observed for the four top layers under single pulse irradiation. The 50-nm films of the multilayer structure are found to be separated at their interfaces, resulting in a selective removal of several top layers (up to 4) in the form of step-like (concentric) craters. The observed phenomenon is associated with a thermo-mechanical ablation mechanism that results in splitting off at film-film interface, where the adhesion force is less than the bulk strength of the used materials, revealing linear dependence of threshold fluences on the film thickness.

Leaping shampoo glides on a 500-nm-thick lubricating air layer

NASA Astrophysics Data System (ADS)

Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

2013-11-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

Stretchable Characteristics of Thin Au Film on Polydimethylsiloxane Substrate with Parylene Intermediate Layer for Stretchable Electronic Packaging

NASA Astrophysics Data System (ADS)

Park, Donghyun; Shin, Soo Jin; Oh, Tae Sung

2018-01-01

Thin Au films with thickness of 150 nm could be reversibly stretched up to 30% elongation on polydimethylsiloxane (PDMS) substrate with 150-nm-thick Parylene C deposited as intermediate layer instead of a Cr adhesion layer. Prestretching of the Parylene-deposited PDMS was effective to suppress the resistance increase of Au films during their tensile elongation. While the resistance change rate Δ R/ R 0 of the Au film at 30% elongation was 11 without prestretching of the Parylene-deposited PDMS, it was substantially suppressed to 0.4 with 30% prestretching of the Parylene-deposited PDMS.

Strong Effect of Azodye Layer Thickness on RM-Stabilized Photoalignment

DTIC Science & Technology

2017-05-21

to thicker layers (~40 nm). Author Keywords photoalignment; azodye; reactive mesogen 1. Introduction Photoalignment of liquid crystals by azodye...Polymerizable azodyes[3] as well as passivation of the azodye film by spin-coating with a layer of reactive mesogen[4] are currently proposed solutions...thick alignment film rather than a ~40 nm thick alignment film ; cells with thin alignment layers are stable to exposure to polarized light for at

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Qingliu; Shi, Bing; Bareño, Javier

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitablemore » in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.« less

[A thin-layer chromatography method for determining the styrene metabolites mandelic and phenylglyoxylic acid in urine].

PubMed

Gartzke, J; Burck, D

1989-06-01

A thin-layer chromatographic method is described for the determination of mandelic and phenyglyoxillic acid on silicagel (Silufol UV 254) after extraction from urine of styrene exposed workers. The quantitative determination was performed after eluting the spots. Phenylglyoxilic acid was measured at 255 nm and mandelic acid by derivative spectroscopically estimation of the .CH(OH).COOH -chromophore at 217 nm or by a three-wavelength mode, respectively. The recovery in urine was 80-104% for phenylglyoxilic acid and 99-105% for mandelic acid.

Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, Min-Sung; Lee, Byung-Teak

2013-02-01

Single crystalline Zn0.8-xMg0.2AlxO thin films were grown on a GaN/Al2O3 template. As the Al content is increased from 0 to 0.06, the optical band gap increased from 3.6 eV to 4.0 eV, growth rate decreased from 6 nm/min to 3 nm/min, and the surface roughness decreased from 17 nm to 0.8 nm. It was observed that interfacial layers were formed between the thin films and the substrates, identified as cubic MgAl2O4 in the case of ZnMgAlO/GaN and cubic MgO in the case of ZnMgO/GaN. It was proposed that the MgAl2O4 layer, with low lattice mismatch of ˜7% against the GaN substrate, acted as the buffer layer to correlate the film and the substrate, resulting in growth of the single crystalline thin films in the case of the ZnMgAlO/GaN system.

The low coherence Fabry-Pérot interferometer with diamond and ZnO layers

NASA Astrophysics Data System (ADS)

Majchrowicz, D.; Den, W.; Hirsch, M.

2016-09-01

The authors present a fiber-optic Fabry-Pérot interferometer built with the application of diamond and zinc oxide (ZnO) thin layers. Thin ZnO films were deposited on the tip of a standard telecommunication single-mode optical fiber (SMF- 28) while the diamond layer was grown on the plate of silicon substrate. Investigated ZnO layers were fabricated by atomic layer deposition (ALD) and the diamond films were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition (μPE CVD) system. Different thickness of layers was examined. The measurements were performed for the fiber-optic Fabry-Pérot interferometer working in the reflective mode. Spectra were registered for various thicknesses of ZnO layer and various length of the air cavity. As a light source, two superluminescent diodes (SLD) with central wavelength of 1300 nm and 1550 nm were used in measurement set-up.

Laser damage threshold measurements of microstructure-based high reflectors

NASA Astrophysics Data System (ADS)

Hobbs, Douglas S.

2008-10-01

In 2007, the pulsed laser induced damage threshold (LIDT) of anti-reflecting (AR) microstructures built in fused silica and glass was shown to be up to three times greater than the LIDT of single-layer thin-film AR coatings, and at least five times greater than multiple-layer thin-film AR coatings. This result suggested that microstructure-based wavelength selective mirrors might also exhibit high LIDT. Efficient light reflection over a narrow spectral range can be produced by an array of sub-wavelength sized surface relief microstructures built in a waveguide configuration. Such surface structure resonant (SSR) filters typically achieve a reflectivity exceeding 99% over a 1-10nm range about the filter center wavelength, making SSR filters useful as laser high reflectors (HR). SSR laser mirrors consist of microstructures that are first etched in the surface of fused silica and borosilicate glass windows and subsequently coated with a thin layer of a non-absorbing high refractive index dielectric material such as tantalum pent-oxide or zinc sulfide. Results of an initial investigation into the LIDT of single layer SSR laser mirrors operating at 532nm, 1064nm and 1573nm are described along with data from SEM analysis of the microstructures, and spectral reflection measurements. None of the twelve samples tested exhibited damage thresholds above 3 J/cm2 when illuminated at the resonant wavelength, indicating that the simple single layer, first order design will need further development to be suitable for high power laser applications. Samples of SSR high reflectors entered in the Thin Film Damage Competition also exhibited low damage thresholds of less than 1 J/cm2 for the ZnS coated SSR, and just over 4 J/cm2 for the Ta2O5 coated SSR.

Aqueous chemical growth of alpha-Fe2O3-alpha-Cr203 nanocompositethin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vayssieres, Lionel; Guo, Jinghua; Nordgren, Joseph

2001-06-30

We are reporting here on the inexpensive fabrication and optical properties of an iron(III) oxide chromium(III) oxide nanocomposite thin film of corundum crystal structure. Its novel and unique-designed architecture consists of uniformed, well-defined and oriented nanorods of Hematite (alpha-Fe2O3) of 50 nm in diameter and 500nm in length and homogeneously distributed nonaggregated monodisperse spherical nanoparticles of Eskolaite (alpha-Cr2O3) of 250 nm in diameter. This alpha-Fe2O3 alpha-Cr2O3 nanocomposite thin film is obtained by growing, directly onto transparent polycrystalline conducting substrate, an oriented layer of hematite nanorods and growing subsequently, the eskolaite layer. The synthesis is carried out by a template-free, low-temperature,more » multilayer thin film coating process using aqueous solution of metal salts as precursors. Almost 100 percent of the light is absorbed by the composite film between 300 and 525 nm and 40 percent at 800 nm which yields great expectations as photoanode materials for photovoltaic cells and photocatalytic devices.« less

The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2014-08-18

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

Effect of different coating layer on the topography and optical properties of ZnO nanostructured

NASA Astrophysics Data System (ADS)

Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Asiah, M. N.; Khusaimi, Z.; Rusop, M.

2018-05-01

Magnesium (Mg) and aluminum (Al) co-doped zinc oxide (MAZO) thin films were synthesized on glass substrate by sol-gel spin coating method. MAZO thin films were prepared at different coating layers range from 1 to 9. Atomic Force Microscopy (AFM) was used to investigate the topography of the thin films. According to the AFM results, Root Means Square (RMS) of MAZO thin films was increased from 0.747 to 6.545 nm, with increase of number coating layer from 1 to 9, respectively. The results shown the variation on structural and topography properties of MAZO seed film when it's deposited at different coating layers on glass substrate. The optical properties was analyzed using UV-Vis spectroscopy. The obtained results show that the transmittance spectra was increased as thin films coating layer increases.

Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

NASA Astrophysics Data System (ADS)

Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

2014-05-01

Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm2V-1s-1, a subthreshold swing of 0.29 V/decade and an on/off current ratio of 109.

Investigation of graphene-on-metal substrates for SPR-based sensor using finite-difference time domain.

PubMed

Said, Fairus Atida; Menon, Pulliyaseri Susthitha; Rajendran, Venkatachalam; Shaari, Sahbudin; Majlis, Burhanuddin Y

2017-12-01

In this study, the authors investigated the effects of a single layer graphene as a coating layer on top of metal thin films such as silver, gold, aluminum and copper using finite-difference time domain method. To enhance the resolution of surface plasmon resonance (SPR) sensor, it is necessary to increase the SPR reflectivity and decrease the full-width-half maximum (FWHM) of the SPR curve so that there is minimum uncertainty in the determination of the resonance dip. Numerical data was verified with analytical and experimental data where all the data were in good agreement with resonance angle differing in <10% due to noise present in components such as humidity and temperature. In further analysis, reflectivity and FWHM were compared among four types of metal with various thin film thicknesses where graphene was applied on top of the metal layers, and data was compared against pure conventional metal thin films. A 60 nm-thick Au thin film results in higher performance with reflectivity of 92.4% and FWHM of 0.88° whereas single layer graphene-on-60 nm-thick Au gave reflectivity of 91.7% and FWHM of 1.32°. However, a graphene-on-40 nm-thick Ag also gave good performance with narrower FWHM of 0.88° and reflection spectra of 89.2%.

Stripping analysis of nanomolar perchlorate in drinking water with a voltammetric ion-selective electrode based on thin-layer liquid membrane.

PubMed

Kim, Yushin; Amemiya, Shigeru

2008-08-01

A highly sensitive analytical method is required for the assessment of nanomolar perchlorate contamination in drinking water as an emerging environmental problem. We developed the novel approach based on a voltammetric ion-selective electrode to enable the electrochemical detection of "redox-inactive" perchlorate at a nanomolar level without its electrolysis. The perchlorate-selective electrode is based on the submicrometer-thick plasticized poly(vinyl chloride) membrane spin-coated on the poly(3-octylthiophene)-modified gold electrode. The liquid membrane serves as the first thin-layer cell for ion-transfer stripping voltammetry to give low detection limits of 0.2-0.5 nM perchlorate in deionized water, commercial bottled water, and tap water under a rotating electrode configuration. The detection limits are not only much lower than the action limit (approximately 246 nM) set by the U.S. Environmental Protection Agency but also are comparable to the detection limits of the most sensitive analytical methods for detecting perchlorate, that is, ion chromatography coupled with a suppressed conductivity detector (0.55 nM) or electrospray ionization mass spectrometry (0.20-0.25 nM). The mass transfer of perchlorate in the thin-layer liquid membrane and aqueous sample as well as its transfer at the interface between the two phases were studied experimentally and theoretically to achieve the low detection limits. The advantages of ion-transfer stripping voltammetry with a thin-layer liquid membrane against traditional ion-selective potentiometry are demonstrated in terms of a detection limit, a response time, and selectivity.

Coatings for FEL optics: preparation and characterization of B4C and Pt

PubMed Central

Störmer, Michael; Siewert, Frank; Horstmann, Christian; Buchheim, Jana; Gwalt, Grzegorz

2018-01-01

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30–100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B4C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments. PMID:29271760

Coatings for FEL optics: preparation and characterization of B4C and Pt.

PubMed

Störmer, Michael; Siewert, Frank; Horstmann, Christian; Buchheim, Jana; Gwalt, Grzegorz

2018-01-01

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30-100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B 4 C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments.

Design and development of next-generation bottom anti-reflective coatings for 45nm process with hyper NA lithography

NASA Astrophysics Data System (ADS)

Nakajima, Makoto; Sakaguchi, Takahiro; Hashimoto, Keisuke; Sakamoto, Rikimaru; Kishioka, Takahiro; Takei, Satoshi; Enomoto, Tomoyuki; Nakajima, Yasuyuki

2006-03-01

Integrated circuit manufacturers are consistently seeking to minimize device feature dimensions in order to reduce chip size and increase integration level. Feature sizes on chips are achieved sub 65nm with the advanced 193nm microlithography process. R&D activities of 45nm process have been started so far, and 193nm lithography is used for this technology. The key parameters for this lithography process are NA of exposure tool, resolution capability of resist, and reflectivity control with bottom anti-reflective coating (BARC). In the point of etching process, single-layer resist process can't be applied because resist thickness is too thin for getting suitable aspect ratio. Therefore, it is necessary to design novel BARC system and develop hard mask materials having high etching selectivity. This system and these materials can be used for 45nm generation lithography. Nissan Chemical Industries, Ltd. and Brewer Science, Inc. have been designed and developed the advanced BARCs for the above propose. In order to satisfy our target, we have developed novel BARC and hard mask materials. We investigated the multi-layer resist process stacked 4 layers (resist / thin BARC / silicon-contained BARC (Si-ARC) / spin on carbon hard mask (SOC)) (4 layers process). 4 layers process showed the excellent lithographic performance and pattern transfer performance. In this paper, we will discuss the detail of our approach and materials for 4 layers process.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

NASA Astrophysics Data System (ADS)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measuredmore » from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.« less

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

PubMed

Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

2016-06-02

NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

PubMed Central

Filonovich, Sergej Alexandrovich; Águas, Hugo; Busani, Tito; Vicente, António; Araújo, Andreia; Gaspar, Diana; Vilarigues, Marcia; Leitão, Joaquim; Fortunato, Elvira; Martins, Rodrigo

2012-01-01

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (∼20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film. PMID:27877504

High efficient light absorption and nanostructure-dependent birefringence of a metal-dielectric symmetrical layered structure

NASA Astrophysics Data System (ADS)

Jen, Yi-Jun; Jhang, Yi-Ciang; Liu, Wei-Chih

2017-08-01

A multilayer that comprises ultra-thin metal and dielectric films has been investigated and applied as a layered metamaterial. By arranging metal and dielectric films alternatively and symmetrically, the equivalent admittance and refractive index can be tailored separately. The tailored admittance and refractive index enable us to design optical filters with more flexibility. The admittance matching is achieved via the admittance tracing in the normalized admittance diagram. In this work, an ultra-thin light absorber is designed as a multilayer composed of one or several cells. Each cell is a seven-layered film stack here. The design concept is to have the extinction as large as possible under the condition of admittance matching. For a seven-layered symmetrical film stack arranged as Ta2O5 (45 nm)/ a-Si (17 nm)/ Cr (30 nm)/ Al (30 nm)/ Cr (30 nm)/ a-Si (17 nm)/ Ta2O5 (45 nm), its mean equivalent admittance and extinction coefficient over the visible regime is 1.4+0.2i and 2.15, respectively. The unit cell on a transparent BK7 glass substrate absorbs 99% of normally incident light energy for the incident medium is glass. On the other hand, a transmission-induced metal-dielectric film stack is investigated by using the admittance matching method. The equivalent anisotropic property of the metal-dielectric multilayer varied with wavelength and nanostructure are investigated here.

Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

PubMed Central

Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

2015-01-01

We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

Semiconductor cylinder fiber laser

NASA Astrophysics Data System (ADS)

Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

2015-12-01

We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics

NASA Astrophysics Data System (ADS)

Chen, H.-Y.; Huang, Y.-R.; Shih, H.-Y.; Chen, M.-J.; Sheu, J.-K.; Sun, C.-K.

2017-11-01

Modern devices adopting denser designs and complex 3D structures have created much more interfaces than before, where atomically thin interfacial layers could form. However, fundamental information such as the elastic property of the interfacial layers is hard to measure. The elastic property of the interfacial layer is of great importance in both thermal management and nano-engineering of modern devices. Appropriate techniques to probe the elastic properties of interfacial layers as thin as only several atoms are thus critically needed. In this work, we demonstrated the feasibility of utilizing the time-resolved femtosecond acoustics technique to extract the elastic properties and mass density of a 1.85-nm-thick interfacial layer, with the aid of transmission electron microscopy. We believe that this femtosecond acoustics approach will provide a strategy to measure the absolute elastic properties of atomically thin interfacial layers.

Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications

NASA Astrophysics Data System (ADS)

Delachat, F.; Le Drogoff, B.; Constancias, C.; Delprat, S.; Gautier, E.; Chaker, M.; Margot, J.

2016-01-01

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

Photocurrent generation in SnO2 thin film by surface charged chemisorption O ions

NASA Astrophysics Data System (ADS)

Lee, Po-Ming; Liao, Ching-Han; Lin, Chia-Hua; Liu, Cheng-Yi

2018-06-01

We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization

NASA Astrophysics Data System (ADS)

Li, Yi-Shao; Wu, Chun-Yi; Chou, Chia-Hsin; Liao, Chan-Yu; Chuang, Kai-Chi; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung

2018-06-01

A tetraethyl-orthosilicate (TEOS) capping oxide was deposited by low-pressure chemical vapor deposition (LPCVD) on a 200-nm-thick amorphous Si (a-Si) film as a heat reservoir to improve the crystallinity and surface roughness of polycrystalline silicon (poly-Si) formed by continuous-wave laser crystallization (CLC). The effects of four thicknesses of the capping oxide layer to satisfy an antireflection condition, namely, 90, 270, 450, and 630 nm, were investigated. The largest poly-Si grain size of 2.5 × 20 µm2 could be achieved using a capping oxide layer with an optimal thickness of 450 nm. Moreover, poly-Si nanorod (NR) thin-film transistors (TFTs) fabricated using the aforementioned technique exhibited a superior electron field-effect mobility of 1093.3 cm2 V‑1 s‑1 and an on/off current ratio of 2.53 × 109.

Separation, identification and quantification of carotenoids and chlorophylls in dietary supplements containing Chlorella vulgaris and Spirulina platensis using High Performance Thin Layer Chromatography.

PubMed

Hynstova, Veronika; Sterbova, Dagmar; Klejdus, Borivoj; Hedbavny, Josef; Huska, Dalibor; Adam, Vojtech

2018-01-30

In this study, 14 commercial products (dietary supplements) containing alga Chlorella vulgaris and cyanobacteria Spirulina platensis, originated from China and Japan, were analysed. UV-vis spectrophotometric method was applied for rapid determination of chlorophylls, carotenoids and pheophytins; as degradation products of chlorophylls. High Performance Thin-Layer Chromatography (HPTLC) was used for effective separation of these compounds, and also Atomic Absorption Spectrometry for determination of heavy metals as indicator of environmental pollution. Based on the results obtained from UV-vis spectrophotometric determination of photosynthetic pigments (chlorophylls and carotenoids), it was confirmed that Chlorella vulgaris contains more of all these pigments compared to the cyanobacteria Spirulina platensis. The fastest mobility compound identified in Chlorella vulgaris and Spirulina platensis using HPTLC method was β-carotene. Spectral analysis and standard calibration curve method were used for identification and quantification of separated substances on Thin-Layer Chromatographic plate. Quantification of copper (Cu 2+ , at 324.7 nm) and zinc (Zn 2+ , at 213.9nm) was performed using Flame Atomic Absorption Spectrometry with air-acetylene flame atomization. Quantification of cadmium (Cd 2+ , at 228.8 nm), nickel (Ni 2+ , at 232.0nm) and lead (Pb 2+ , at 283.3nm) by Electrothermal Graphite Furnace Atomic Absorption Spectrometry; and quantification of mercury (Hg 2+ , at 254nm) by Cold Vapour Atomic Absorption Spectrometry. Copyright © 2017 Elsevier B.V. All rights reserved.

Particle-based Nano-Antennas at the Vis-NIR regime

DTIC Science & Technology

2013-11-01

PSS (poly(3,4-ethylenedioxythiophene) :poly(styrene sulfonate) is then spin coated and dried at 110oC to form a 50nm buffer layer partially covering...dominant effect is that during the spin coating of the 50nm PEDOT buffer a residual very thin layer coated also the top 50nm part of the Au disks...antennas, capacitive versus conductive coupling, on-demand design (termed ‘popcorn’ antennas), broadband plasmonic metamaterials, and light

On the Discontinuity of Polycrystalline Silicon Thin Films Realized by Aluminum-Induced Crystallization of PECVD-Deposited Amorphous Si

NASA Astrophysics Data System (ADS)

Pan, Qingtao; Wang, Tao; Yan, Hui; Zhang, Ming; Mai, Yaohua

2017-04-01

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation.

Optical reflectance of solution processed quasi-superlattice ZnO and Al-doped ZnO (AZO) channel materials

NASA Astrophysics Data System (ADS)

Buckley, Darragh; McCormack, Robert; O'Dwyer, Colm

2017-04-01

The angle-resolved reflectance of high crystalline quality, c-axis oriented ZnO and AZO single and periodic quasi-superlattice (QSL) spin-coated TFT channels materials are presented. The data is analysed using an adapted model to accurately determine the spectral region for optical thickness and corresponding reflectance. The optical thickness agrees very well with measured thickness of 1-20 layered QSL thin films determined by transmission electron microscopy if the reflectance from lowest interference order is used. Directional reflectance for single layers or homogeneous QSLs of ZnO and AZO channel materials exhibit a consistent degree of anti-reflection characteristics from 30 to 60° (~10-12% reflection) for thickness ranging from ~40 nm to 500 nm. The reflectance of AZO single layer thin films is  <10% from 30 to 75° at 514.5 nm, and  <6% at 632.8 nm from 30-60°. The data show that ZnO and AZO with granular or periodic substructure behave optically as dispersive, continuous thin films of similar thickness, and angle-resolved spectral mapping provides a design rule for transparency or refractive index determination as a function of film thickness, substructure (dispersion) and viewing angle.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

NASA Astrophysics Data System (ADS)

Deshmukh, S. G.; Jariwala, Akshay; Agarwal, Anubha; Patel, Chetna; Panchal, A. K.; Kheraj, Vipul

2016-04-01

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl2 and Na2S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grain size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm-1 and 1094 cm-1. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

Monitoring plasma treatment of thin films by surface plasmon resonance

NASA Astrophysics Data System (ADS)

Laha, Ranjit; Manivannan, A.; Kasiviswanathan, S.

2014-03-01

We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ˜20° after a plasma treatment of ˜7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

Monitoring plasma treatment of thin films by surface plasmon resonance.

PubMed

Laha, Ranjit; Manivannan, A; Kasiviswanathan, S

2014-03-01

We report the surface plasmon resonance (SPR) measurements during plasma treatment of thin films by an indigenously designed setup. From the measurements on Al (6.3 nm)/Ag (38 nm) bi-layer at a pressure of 0.02 mbar, the SPR position was found to be shifted by ~20° after a plasma treatment of ~7 h. The formation of oxide layers during plasma oxidation was confirmed by glancing angle x-ray diffraction (GXRD) measurements. Combined analysis of GXRD and SPR data confirmed that while top Al layer enables controlling plasma oxidation of Ag, the setup enables monitoring the same. The setup designed is a first of its kind for in situ SPR studies where creation of low pressure is a prerequisite.

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

Formation of nickel germanides from Ni layers with thickness below 10 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5more » nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness« less

Pulser Laser Deposition of Transparent Conducting Thin Films on Flexible Substrates

DTIC Science & Technology

2001-01-19

8217-diphenyl-4,4’diamine (TPD), 50, and an electron 9 transport/emitting layer (ETL/EML) 20, of tris (8-hydroxyquinolinolato) aluminum (III) ( Alq3 ), 10...nm 0 nm 300 nm Fig.6(a) r—1 20 nm 300 10 nm 0 nm 150 300 nm Fig. 6(b) MgAg 30 Alq3 (70iim) TPD (50nm) 20 10 ITO PET substrate 40

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance.

PubMed

Qiu, Wenbin; Ma, Zongqing; Patel, Dipak; Sang, Lina; Cai, Chuanbing; Shahriar Al Hossain, Mohammed; Cheng, Zhenxiang; Wang, Xiaolin; Dou, Shi Xue

2017-10-25

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF 2 ) (100) substrates and glean the detailed information from the FeSe/CaF 2 interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF 2 in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T c ) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T c onset /T c zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF 2 interfaces are also proposed for further enhancing the superconducting performance in this system.

New designs and characterization techniques for thin-film solar cells

NASA Astrophysics Data System (ADS)

Pang, Yutong

This thesis presents a fundamentally new thin-film photovoltaic design and develops several novel characterization techniques that improve the accuracy of thin-film solar cell computational models by improving the accuracy of the input data. We first demonstrate a novel organic photovoltaic (OPV) design, termed a "Slot OPV", in which the active layer is less than 50 nm; We apply the principles of slot waveguides to confine light within the active layer. According to our calculation, the guided-mode absorption for a 10nm thick active layer equal to the absorption of normal incidence on an OPV with a 100nm thick active layer. These results, together with the expected improvement in charge extraction for ultrathin layers, suggest that slot OPVs can be designed with greater power conversion efficiency than today's state-of-art OPV architectures if practical challenges, such as the efficient coupling of light into these modes, can be overcome. The charge collection probability, i.e. the probability that charges generated by absorption of a photon are successfully collected as current, is a critical feature for all kinds of solar cells. While the electron-beam-induced current (EBIC) method has been used in the past to successfully reconstruct the charge collection probability, this approach is destructive and requires time-consuming sample preparation. We demonstrate a new nondestructive optoelectronic method to reconstruct the charge collection probability by analyzing the internal quantum efficiency (IQE) data that are measured on copper indium gallium diselenide (CIGS) thin-film solar cells. We further improve the method with a parameter-independent regularization approach. Then we introduce the Self-Constrained Ill-Posed Inverse Problem (SCIIP) method, which improves the signal-to-noise of the solution by using the regularization method with system constraints and optimization via an evolutionary algorithm. For a thin-film solar cell optical model to be an accurate representation of reality, the measured refractive index profile of the solar cell used as input to the model must also be accurate. We describe a new method for reconstructing the depth-dependent refractive-index profile with high spatial resolution in thin photoactive layers. This novel technique applies to any thin film, including the photoactive layers of a broad range of thin-film photovoltaics. Together, these methods help us improve the measurement accuracy of the depth profile within thin-film photovoltaics for optical and electronic properties such as refractive index and charge collection probability, which is critical to the understanding, modeling, and optimization of these devices.

Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses

NASA Astrophysics Data System (ADS)

Qu, Yunxiu; Yang, Jia; Li, Yunpeng; Zhang, Jiawei; Wang, Qingpu; Song, Aimin; Xin, Qian

2018-07-01

Bottom gated thin-film transistors (TFTs) with various sputtered SnO active layer thicknesses ranging from 10 to 30 nm and different passivation layers have been investigated. The device with 20 nm SnO showed the highest on/off ratio of 1.7 × 104 and the smallest subthreshold swing of 8.43 V dec‑1, and the mobility (0.76 cm2 V‑1 s‑1) was only slightly lower than in TFTs with a thicker SnO layer. However, both the mobility and the on/off ratio of the 15 nm SnO TFT dropped significantly by one order of magnitude. This indicated a strong influence of the top surface on the carrier transport, and we thus applied an organic or an inorganic encapsulation material to passivate the top surface. In the 20 nm TFT, the on/off ratio was doubled after passivation. The performance of the 15 nm TFT was improved even more dramatically with the on/off ratio increased by one order of magnitude and the mobility increased also significantly. Our experiment shows that polymethyl methacrylate passivation is more effective to reduce the shallow trap states, and Al2O3 is more effective in reducing the deep traps in the SnO channel.

Optical characterizations of silver nanoprisms embedded in polymer thin film layers

NASA Astrophysics Data System (ADS)

Carlberg, Miriam; Pourcin, Florent; Margeat, Olivier; Le Rouzo, Judikael; Berginc, Gerard; Sauvage, Rose-Marie; Ackermann, Jorg; Escoubas, Ludovic

2017-10-01

The precise control of light-matter interaction has a wide range of applications and is currently driven by the use of nanoparticles (NPs) by the recent advances in nanotechnology. Taking advantage of the material, size, shape, and surrounding media dependence of the optical properties of plasmonic NPs, thin film layers with tunable optical properties are achieved. The NPs are synthesized by wet chemistry and embedded in a polyvinylpyrrolidone (PVP) polymer thin film layer. Spectrophotometer and spectroscopic ellipsometry measurements are coupled to finite-difference time domain numerical modeling to optically characterize the heterogeneous thin film layers. Silver nanoprisms of 10 to 50 nm edge size exhibit high absorption through the visible wavelength range. A simple optical model composed of a Cauchy law and a Lorentz law, accounting for the optical properties of the nonabsorbing polymer and the absorbing property of the nanoprisms, fits the spectroscopic ellipsometry measurements. Knowing the complex optical indices of heterogeneous thin film layers let us design layers of any optical properties.

Design and fabrication of thin-film polarizer at wavelength of 1540 nm and investigation of its laser-induced damage threshold

NASA Astrophysics Data System (ADS)

Sahraee, Masoume; Fallah, Hamid Reza; Moradi, Badri; Zabolian, Hosein; Mahmoodzade, Morteza Haji

2014-12-01

In this paper a thin-film polarizer at a wavelength of 1540 nm was designed and fabricated. These types of polarizer are usually used in laser systems to obtain linearly polarized light beams. Our design consists of a system of eighteen dielectric thin-film layers from repeated pairs of titanium dioxide and silicon dioxide layers that are deposited on a BK7 glass substrate. Design was carried out based on theoretical principles and computer calculations. Thin-film design software was used for designing the polarizer. The angle of incidence was supposed to be 56° that is the Browster angle for BK7 glass. Performance and laser-induced damage threshold of the polarizer were enhanced by a suitable selection of various parameters including thickness of each layer, their number and the electric field distribution of layers. After several designs, fabrications and refinement of parameters, the final polarizer was designed. Then the final sample of the polarizer was prepared using the electron beam evaporation (EBE) technique with Balzers BAK 760 coating machine. Spectral transmittance of the sample was measured by Shimadzu 3100 UV-VIS-NIR spectrophotometer. Investigation of spectral transmittance showed that at a wavelength of 1540nm, the transmission of P polarization is 87.82 and the transmission of S polarization is 0.43 which show a ratio ( T P / T S of 204. So, this ratio is an acceptable value for our desired polarizer.

Atomic Layer Deposition of HfO2 and Si Nitride on Ge Substrates

NASA Astrophysics Data System (ADS)

Zhu, Shiyang; Nakajima, Anri

2007-12-01

Hafnium oxide (HfO2) thin films were deposited on Ge substrates at 300 °C using atomic layer deposition (ALD) with tetrakis(diethylamino)hafnium (termed as TDEAH) as a precursor and water as an oxidant. The deposition rate was estimated to be 0.09 nm/cycle and the deposited HfO2 films have a smooth surface and an almost stoichiometric composition, indicating that the growth follows a layer-by-layer kinetics, similarly to that on Si substrates. Si nitride thin films were also deposited on Ge by ALD using SiCl4 as a precursor and NH3 as an oxidant. Si nitride has a smaller deposition rate of about 0.055 nm/cycle and a larger gate leakage current than HfO2 deposited on Ge by ALD.

Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

NASA Astrophysics Data System (ADS)

Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

2018-06-01

In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

High Resolution Quantitative Microbeam Analysis of Ir-coated Geological Specimens Using Conventionally Coated Standards

NASA Astrophysics Data System (ADS)

Armstrong, J. T.; Crispin, K. L.

2012-12-01

Traditionally, quantitative electron microbeam analyses of insulating specimens are performed after coating the materials with thin conducting layers of carbon. For x-ray lines greater than 1 keV in energy and beam voltages in excess of 10 keV, the results are insensitive to the exact thickness of the carbon coat. High resolution imaging, low voltage analysis, and analysis of specimens containing low levels of carbon require the use of substitute conductive coats. Typical substitutes for carbon coats (e.g., Au, Au-Pd, Cr, Al) require either using similarly coated standards or substantial corrections to be applied. Even when using modern multi-layer correction algorithms or Monte Carlo calculations, significant errors can result (e.g., Armstrong 2009, Armstrong and Crispin, 2012). We propose the use of ultra-thin layers of Ir as a substitute for C in the analysis of insulating geological specimens. Ir has been found to be an excellent coating material for high resolution imaging (e.g., Echlin, 2009). Sputtered layers as thin as 0.5 nm are found to be conductive, and layers of just a few nm provide good protection against beam damage with sub-nm grain size (Sebring et al., 1999). We have analyzed a series of geological materials with Ir coats between 1 - 8 nm and found similar levels of effects on emitted x-ray intensities as produced with typical carbon coat thicknesses (10-25 nm). E.g., for Ir thicknesses less than 5 nm, the reduction of intensity for x-ray lines between 1 and 7 keV are between 1-3% for a beam energy of 15 keV. The reduction in intensity for higher-energy lines such as Fe-K is actually less than produced by typical C-coats. We will present the results of these experiments and propose simple algorithmic equations which fit these data.

Thermal annealing and SHI irradiation induced modifications in sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.

2017-09-01

In the present work, we study the annealing and swift heavy ion (SHI) beam induced modifications in the optical and structural properties of sandwiched structured Carbon-gold-Carbon (a-C/Au/a-C) nanocomposite (NCs) thin films. The NCs thin films were synthesized by electron-beam evaporation technique at room temperature with ∼30 nm thickness for both carbon layer and ∼6 nm for gold layer. Gold-carbon NCs thin films were annealed in the presence of argon at a temperature of 500 °C, 600 °C and 750 °C. The NCs thin films were also irradiated with 90 MeV Ni ions beam with different ion fluences in the range from 3 × 1012, 6 × 1012 and 1 × 1013 ions/cm2. Surface plasmon resonance (SPR) of Au nanoparticles are not observed in the pristine film but, after annealing at temperature of 600 °C and 750 °C, it was clearly seen at ∼534 nm as confirmed by UV-visible absorption spectroscopy. 90 MeV Ni irradiated thin film at the fluence of 1 × 1013 ions/cm2 also show strong absorption band at ∼534 nm. The growth and size of Au nanoparticle for pristine and 90 MeV Ni ion irradiated thin film with fluence of 1 × 1013 ions/cm2, were estimated by Transmission electron microscopy (TEM) images with the bi-model distribution. The size of the gold nanoparticle (NPs) was found to be ∼4.5 nm for the pristine film and ∼5.4 nm for the irradiated film at a fluence of 1 × 1013 ions/cm2. The thickness and metal atomic fraction in carbon matrix were estimated by Rutherford backscattering spectroscopy (RBS). The effect of annealing as well as heavy ion irradiation on D and G band of carbon matrix were studied by Raman spectroscopy.

Profilometry of thin films on rough substrates by Raman spectroscopy

PubMed Central

Ledinský, Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbühler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf , Stefaan; Ballif , Christophe; Fejfar, Antonín

2016-01-01

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2. PMID:27922033

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

NASA Astrophysics Data System (ADS)

Tabataba-Vakili, Farsane; Roland, Iannis; Tran, Thi-Mo; Checoury, Xavier; El Kurdi, Moustafa; Sauvage, Sébastien; Brimont, Christelle; Guillet, Thierry; Rennesson, Stéphanie; Duboz, Jean-Yves; Semond, Fabrice; Gayral, Bruno; Boucaud, Philippe

2017-09-01

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

2012-02-01

The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

Thin-Film Nanocapacitor and Its Characterization

ERIC Educational Resources Information Center

Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

2007-01-01

An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Ultra-thin L1{sub 0}-FePt for perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Pin; Chow, Gan Moog; Chen, Jing-Sheng, E-mail: msecj@nus.edu.sg

2014-05-07

Perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves (PSVs) with ultra-thin L1{sub 0}-FePt alloy free layer possessing high anisotropy and thermal stability have been fabricated and studied. The thickness of the L1{sub 0}-FePt layer was varied between 2 and 4 nm. The PSV became increasingly decoupled with reduced L1{sub 0}-FePt thickness due to the larger difference between the coercivity of the L1{sub 0}-FePt and [Co/Pd]{sub 30} films. The PSV with an ultra-thin L1{sub 0}-FePt free layer of 2 nm displayed a high K{sub u} of 2.21 × 10{sup 7} ergs/cm{sup 3}, high thermal stability of 84 and a largest giant magnetoresistance of 0.54%.

Highly-flexible, ultra-thin, and transparent single-layer graphene/silver composite electrodes for organic light emitting diodes

NASA Astrophysics Data System (ADS)

Li, Kun; Wang, Hu; Li, Huiying; Li, Ye; Jin, Guangyong; Gao, Lanlan; Marco, Mazzeo; Duan, Yu

2017-08-01

Transparent conductive electrode (TCE) platforms are required in many optoelectronic devices, including organic light emitting diodes (OLEDs). To date, indium tin oxide based electrodes are widely used in TCEs but they still have few limitations in term of achieving flexible OLEDs and display techniques. In this paper, highly-flexible and ultra-thin TCEs were fabricated for use in OLEDs by combining single-layer graphene (SLG) with thin silver layers of only several nanometers in thickness. The as-prepared SLG + Ag (8 nm) composite electrodes showed low sheet resistances of 8.5 Ω/□, high stability over 500 bending cycles, and 74% transmittance at 550 nm wavelength. Furthermore, SLG + Ag composite electrodes employed as anodes in OLEDs delivered turn-on voltages of 2.4 V, with luminance exceeding 1300 cd m-2 at only 5 V, and maximum luminance reaching up 40 000 cd m-2 at 9 V. Also, the devices could work normally under less than the 1 cm bending radius.

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

An Electrostatically Self-Assembled Thin Film Made of Zn-Substituted Tungstoborate and Rhodamine B with Photoelectrochemical Properties.

PubMed

Mao, Xu; Zhang, Jia-Ning; Gao, Li-Hua; Su, Yu; Chen, Peng-Xia; Wang, Ke-Zhi

2016-04-01

An electrostatically self-assembled multilayer thin film consisting of alternating layers of Keggin polyoxometalate of Zn-substituted tungstoborate (BW11Zn) and Rhodamine B (RhB) has successfully been prepared on a quartz and indium-tin oxide (ITO) glass substrate. The ultraviolet-visible (UV-vis) absorption spectra demonstrated that the electrostatically self-assembled film of (BW11Zn/RhB)n was uniformly deposited layer by layer, and the RhB molecules in the film formed the J-aggregation. The photoelectrochemical investigations showed that the films generated stable cathodic photocurrents that originated from RhB, and the maximal cathodic photocurrent density generated by an eight-layer film was 4.9 µA/cm2 while the film was irradiated with 100 mW/cm2 polychromatic light of 730 nm > λ > 325 nm at an applied potential of 0 V versus a saturated calomel electrode.

Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

NASA Astrophysics Data System (ADS)

Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2018-02-01

The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

Ultrathin free-standing close-packed gold nanoparticle films: Conductivity and Raman scattering enhancement

NASA Astrophysics Data System (ADS)

Yu, Qing; Huang, Hongwen; Peng, Xinsheng; Ye, Zhizhen

2011-09-01

A simple filtration technique was developed to prepare large scale free-standing close-packed gold nanoparticle ultrathin films using metal hydroxide nanostrands as both barrier layer and sacrificial layer. As thin as 70 nm, centimeter scale robust free-standing gold nanoparticle thin film was obtained. The thickness of the films could be easily tuned by the filtration volumes. The electronic conductivities of these films varied with the size of the gold nanoparticles, post-treatment temperature, and thickness, respectively. The conductivity of the film prepared from 20 nm gold nanoparticles is higher than that of the film prepared from 40 nm gold nanoparticle by filtering the same filtration volume of their solution, respectively. Their conductivities are comparable to that of the 220 nm thick ITO film. Furthermore, these films demonstrated an average surface Raman scattering enhancement up to 6.59 × 105 for Rhodamine 6 G molecules on the film prepared from 40 nm gold nanoparticles. Due to a lot of nano interspaces generated from the close-packed structures, two abnormal enhancements and relative stronger intensities of the asymmetrical vibrations at 1534 and 1594 cm-1 of R6G were observed, respectively. These robust free-standing gold nanoparticle films could be easily transferred onto various solid substrates and hold the potential application for electrodes and surface enhanced Raman detectors. This method is applicable for preparation of other nanoparticle free-standing thin films.A simple filtration technique was developed to prepare large scale free-standing close-packed gold nanoparticle ultrathin films using metal hydroxide nanostrands as both barrier layer and sacrificial layer. As thin as 70 nm, centimeter scale robust free-standing gold nanoparticle thin film was obtained. The thickness of the films could be easily tuned by the filtration volumes. The electronic conductivities of these films varied with the size of the gold nanoparticles, post-treatment temperature, and thickness, respectively. The conductivity of the film prepared from 20 nm gold nanoparticles is higher than that of the film prepared from 40 nm gold nanoparticle by filtering the same filtration volume of their solution, respectively. Their conductivities are comparable to that of the 220 nm thick ITO film. Furthermore, these films demonstrated an average surface Raman scattering enhancement up to 6.59 × 105 for Rhodamine 6 G molecules on the film prepared from 40 nm gold nanoparticles. Due to a lot of nano interspaces generated from the close-packed structures, two abnormal enhancements and relative stronger intensities of the asymmetrical vibrations at 1534 and 1594 cm-1 of R6G were observed, respectively. These robust free-standing gold nanoparticle films could be easily transferred onto various solid substrates and hold the potential application for electrodes and surface enhanced Raman detectors. This method is applicable for preparation of other nanoparticle free-standing thin films. Electronic supplementary information (ESI) available: Figure S1, the SEM images and photograph of the films prepared from 10 ml, 20 nm gold nanoparticles. Scheme S1, the vibrations of 1534 and 1594 cm-1 of R6G. See DOI: 10.1039/c1nr10578g

Role of HfO 2/SiO 2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

DOE PAGES

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; ...

2016-07-15

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

Structural and thermoelectric properties of epitaxially grown Bi2Te3 thin films and superlattices

NASA Astrophysics Data System (ADS)

Peranio, N.; Eibl, O.; Nurnus, J.

2006-12-01

Multi-quantum-well structures of Bi2Te3 are predicted to have a high thermoelectric figure of merit ZT. Bi2Te3 thin films and Bi2Te3/Bi2(Te0.88Se0.12)3 superlattices (SLs) were grown epitaxially by molecular beam epitaxy on BaF2 substrates with periods of 12 and 6nm, respectively. Reflection high-energy electron diffraction confirmed a layer-by-layer growth, x-ray diffraction yielded the lattice parameters and SL periods and proved epitaxial growth. The in-plane transport coefficients were measured and the thin films and SL had power factors between 28 and 35μW /cmK2. The lattice thermal conductivity varied between 1.60W/mK for Bi2Te3 thin films and 1.01W/mK for a 10nm SL. The best figures of merit ZT were achieved for the SL; however, the values are slightly smaller than those in bulk materials. Thin films and superlattices were investigated in plan view and cross section by transmission electron microscopy. In the Bi2Te3 thin film and SL the dislocation density was found to be 2×1010cm-2. Bending of the SL with amplitudes of 30nm (12nm SL) and 15nm (6nm SL) and a wavelength of 400nm was determined. Threading dislocations were found with a density greater than 2×109cm-2. The superlattice interfaces are strongly bent in the region of the threading dislocations, undisturbed regions have a maximum lateral sie of 500nm. Thin films and SL showed a structural modulation [natural nanostructure (nns)] with a wavelength of 10nm and a wave vector parallel to (1,0,10). This nns was also observed in Bi2Te3 bulk materials and turned out to be of general character for Bi2Te3. The effect of the microstructure on the thermoelectric properties is discussed. The microstructure is governed by the superlattice, the nns, and the dislocations that are present in the films. Our results indicate that the microstructure directly affects the lattice thermal conductivity. Thermopower and electrical conductivity were found to be negatively correlated and no clear dependence of the two quantities on the microstructure could be found.

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

NASA Technical Reports Server (NTRS)

Allen, L. P.; Anc, M. J.; Dolan, B.; Jiao, J.; Guss, B.; Seraphin, S.; Liu, S. T.; Jenkins, W.

1998-01-01

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Fabrication of nanocrystal ink based superstrate-type CuInS₂ thin film solar cells.

PubMed

Cho, Jin Woo; Park, Se Jin; Kim, Woong; Min, Byoung Koun

2012-07-05

A CuInS₂ (CIS) nanocrystal ink was applied to thin film solar cell devices with superstrate-type configuration. Monodispersed CIS nanocrystals were synthesized by a colloidal synthetic route and re-dispersed in toluene to form an ink. A spray method was used to coat CIS films onto conducting glass substrates. Prior to CIS film deposition, TiO₂ and CdS thin films were also prepared as a blocking layer and a buffer layer, respectively. We found that both a TiO₂ blocking layer and a CdS buffer layer are necessary to generate photoresponses in superstrate-type devices. The best power conversion efficiency (∼1.45%) was achieved by the CIS superstrate-type thin film solar cell device with 200 and 100 nm thick TiO₂ and CdS films, respectively.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

Preparation and characterization of nanostructured Pt/TiO2 thin films treated using electron beam.

PubMed

Shin, Joong-Hyeok; Woo, Hee-Gweon; Kim, Bo-Hye; Lee, Byung Cheol; Jun, Jin

2010-05-01

Pt nanoparticle-doped titanium dioxide (Pt/TiO2) thin films were prepared on a silicon wafer substrate by sol-gel spin coating process. The prepared thin films were treated with electron beam (EB at 1.1 MeV, 100, 200, 300 kGy) at air atmosphere. The effect of EB-irradiation on the composition of the treated thin films, optical properties and morphology of thin films were investigated by various analytical techniques such as X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The crystal structure of the TiO2 layer was found to be an anatase phase and the size of TiO2 particles was determined to be about 13 nm. Pt nanoparticles with diameter of 5 nm were observed on surface of the films. A new layer (presumed to be Pt-Ti complex and/or PtO2 compound) was created in the Pt/TiO2 thin film treated with EB (300 kGy). The transmittance of thin film decreased with EB treatment whereas the refractive index increased.

Defect-driven flexochemical coupling in thin ferroelectric films

NASA Astrophysics Data System (ADS)

Eliseev, Eugene A.; Vorotiahin, Ivan S.; Fomichov, Yevhen M.; Glinchuk, Maya D.; Kalinin, Sergei V.; Genenko, Yuri A.; Morozovska, Anna N.

2018-01-01

Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical coupling on the size effects in polar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultrathin layer of ambient screening charges, characterized by a surface screening length. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexochemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTi O3 films containing a layer of elastic defects. A nontrivial result is the persistence of ferroelectricity at film thicknesses below 4 nm, temperatures lower than 350 K, and relatively high surface screening length (˜0.1 nm ) . The origin of this phenomenon is the flexoelectric coupling leading to the rebuilding of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm. The ferroelectricity persistence is facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.

Performance enhancement in organic photovoltaic solar cells using iridium (Ir) ultra-thin surface modifier (USM)

NASA Astrophysics Data System (ADS)

Pandey, Rina; Lim, Ju Won; Kim, Jung Hyuk; Angadi, Basavaraj; Choi, Ji Won; Choi, Won Kook

2018-06-01

In this study, Iridium (Ir) metallic layer as an ultra-thin surface modifier (USM) was deposited on ITO coated glass substrate using radio frequency magnetron sputtering for improving the photo-conversion efficiency of organic photovoltaic cells. Ultra-thin Ir acts as a surface modifier replacing the conventional hole transport layer (HTL) PEDOT:PSS in organic photovoltaic (OPV) cells with two different active layers P3HT:PC60BM and PTB7:PC70BM. The Ir USM (1.0 nm) coated on ITO glass substrate showed transmittance of 84.1% and work function of >5.0 eV, which is higher than that of ITO (4.5-4.7 eV). The OPV cells with Ir USM (1.0 nm) exhibits increased power conversion efficiency of 3.70% (for P3HT:PC60BM active layer) and 7.28% (for PTB7:PC70BM active layer) under 100 mW/cm2 illumination (AM 1.5G) which are higher than those of 3.26% and 6.95% for the same OPV cells but with PEDOT:PSS as HTL instead of Ir USM. The results reveal that the chemically stable Ir USM layer could be used as an alternative material for PEDOT:PSS in organic photovoltaic cells.

ZnS nanostructured thin-films deposited by successive ionic layer adsorption and reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S. G., E-mail: deshmukhpradyumn@gmail.com; Jariwala, Akshay; Agarwal, Anubha

ZnS thin films were grown on glass substrate using successive ionic layer adsorption and reaction (SILAR) technique at room temperature. Aqueous solutions of ZnCl{sub 2} and Na{sub 2}S were used as precursors. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectroscopy and optical absorption measurements were applied to study the structural, surface morphology and optical properties of as-deposited ZnS thin films. The X-ray diffraction profiles revealed that ZnS thin films consist of crystalline grains with cubic phase. Spherical nano grains of random size and well covered on the glass substrate were observed from FESEM. The average grainmore » size were found to be 77 nm, 100 nm and 124 nm for 20 cycles, 40 cycles and 60 cycles samples respectively. For 60 cycle sample, Raman spectra show two prominent peaks at 554 cm{sup −1} and 1094 cm{sup −1}. The optical band gap values were found to be 3.76 eV, 3.72 eV and 3.67 eV for 20 cycle, 40 cycle and 60 cycle samples respectively.« less

Pulsed laser deposition of functionalized Mg-Al layered double hydroxide thin films

NASA Astrophysics Data System (ADS)

Vlad, A.; Birjega, R.; Tirca, I.; Matei, A.; Mardare, C. C.; Hassel, A. W.; Nedelcea, A.; Dinescu, M.; Zavoianu, R.

2018-02-01

In this paper, magnesium-aluminium layered double hydroxide (LDH) has been functionalized with sodium dodecyl sulfate (DS) and deposited as thin film by pulsed laser deposition (PLD). Mg, Al-LDH powders were prepared by co-precipitation and used as reference material. Intercalation of DS as an anionic surfactant into the LDHs host layers has been prepared in two ways: co-precipitation (P) and reconstruction (R). DS intercalation occurred in LDH powder via both preparation methods. The films deposited via PLD, in particular at 532 and 1064 nm, preserve the organic intercalated layered structure of the targets prepared from these powders. The results reveal the ability of proposed deposition technique to produce functional composite organo-modified LDHs thin films.

4P-NPD ultra-thin films as efficient exciton blocking layers in DBP/C70 based organic solar cells

NASA Astrophysics Data System (ADS)

Patil, Bhushan R.; Liu, Yiming; Qamar, Talha; Rubahn, Horst-Günter; Madsen, Morten

2017-09-01

Exciton blocking effects from ultra-thin layers of N,N‧-di-1-naphthalenyl-N,N‧-diphenyl [1,1‧:4‧,1″:4″,1‴-quaterphenyl]-4,4‴-diamine (4P-NPD) were investigated in small molecule-based inverted organic solar cells (OSCs) using tetraphenyldibenzoperiflanthene as the electron donor material and fullerene (C70) as the electron acceptor material. The short-circuit current density (J SC) and power conversion efficiency (PCE) of the optimized OSCs with 0.7 nm thick 4P-NPD were approximately 16% and 24% higher, respectively, compared to reference devices without exciton blocking layers (EBLs). Drift diffusion-based device modeling was conducted to model the full current density-voltage (JV) characteristics and external quantum efficiency spectrum of the OSCs, and photoluminescence measurements were conducted to investigate the exciton blocking effects with increasing thicknesses of the 4P-NPD layer. Importantly, coupled optical and electrical modeling studies of the device behaviors and exciton generation rates and densities in the active layer for different 4P-NPD layer thicknesses were conducted, in order to gain a complete understanding of the observed increase in PCE for 4P-NPD layer thicknesses up to 1 nm, and the observed decrease in PCE for layer thicknesses beyond 1 nm. This work demonstrates a route for guiding the integration of EBLs in OSC devices.

ITO/metal/ITO anode for efficient transparent white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Joo, Chul Woong; Lee, Jonghee; Sung, Woo Jin; Moon, Jaehyun; Cho, Nam Sung; Chu, Hye Yong; Lee, Jeong-Ik

2015-02-01

We report on the characteristics of enhanced and balanced white-light emission of transparent organic light emitting diodes (TOLEDs) by introducing anode that has a stack structure of ITO/metal/ITO (IMI). We have investigated an anode that has a stack structure of IMI. IMI anodes are typically composed of a thin Ag layer (˜15 nm) sandwiched between two ITO layers (˜50 nm). By inserting an Ag layer it was possible to achieve sheet resistance lower than 3 Ω/sq. and transmittance of 86% at a wavelength of 550 nm. The Ag insert can act as a reflective component. With its counterpart, a transparent cathode made of a thin Ag layer (˜15 nm), micro-cavities (MC) can be effectively induced in the OLED, leading to improved performance. Using an IMI anode, it was possible to significantly increase the current efficiencies. The current efficiencies of the top and the bottom of the IMI TOLED increased to 23.0 and 15.6 cd/A, respectively, while those of the white TOLED with the ITO anode were 20.7 and 5.1 cd/A, respectively. A 30% enhancement in the overall current efficiency was achieved by taking advantage of the MC effect and the low sheet resistance.

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

NASA Astrophysics Data System (ADS)

Güner, S.; Budak, S.; Gibson, B.; Ila, D.

2014-08-01

We have deposited five periodic SiO2/SiO2 + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO2:Ag layers were 2.7-5 nm and SiO2 buffer layers were 1-15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO2 were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO2 was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 1014 and 1 × 1016 ions/cm2 values. Optical absorption spectra were recorded in the range of 200-900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Chi; Aldosary, Mohammed; Jiang, Zilong

A layer-by-layer epitaxial growth up to 227 atomic layers of ferrimagnetic insulator yttrium iron garnet (YIG) thin films is achieved on (110)-oriented gadolinium gallium garnet substrates using pulsed laser deposition. Atomically smooth terraces are observed on YIG films up to 100 nm in thickness. The root-mean-square roughness is as low as 0.067 nm. The easy-axis lies in the film plane, indicating the dominance of shape anisotropy. For (110)-YIG films, there is well-defined two-fold in-plane anisotropy, with the easiest axis directed along [001]. The Gilbert damping constant is determined to be 1.0 × 10{sup −4} for 100 nm thick films.

Black phosphorus-based one-dimensional photonic crystals and microcavities.

PubMed

Kriegel, Ilka; Toffanin, Stefano; Scotognella, Francesco

2016-11-10

The latest achievements in the fabrication of thin layers of black phosphorus (BP), toward the technological breakthrough of a phosphorene atomically thin layer, are paving the way for their use in electronics, optics, and optoelectronics. In this work, we have simulated the optical properties of one-dimensional photonic structures, i.e., photonic crystals and microcavities, in which few-layer BP is one of the components. The insertion of the 5-nm black phosphorous layers leads to a photonic band gap in the photonic crystals and a cavity mode in the microcavity that is interesting for light manipulation and emission enhancement.

Optimal thickness of silicon membranes to achieve maximum thermoelectric efficiency: A first principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangold, Claudia; Neogi, Sanghamitra; Max Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz

2016-08-01

Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Characterization of SiGe thin films using a laboratory X-ray instrument

PubMed Central

Ulyanenkova, Tatjana; Myronov, Maksym; Benediktovitch, Andrei; Mikhalychev, Alexander; Halpin, John; Ulyanenkov, Alex

2013-01-01

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation. PMID:24046495

Characterization of SiGe thin films using a laboratory X-ray instrument.

PubMed

Ulyanenkova, Tatjana; Myronov, Maksym; Benediktovitch, Andrei; Mikhalychev, Alexander; Halpin, John; Ulyanenkov, Alex

2013-08-01

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si 0.4 Ge 0.6 films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.

Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomczak, Y., E-mail: Yoann.Tomczak@imec.be; Department of Chemistry, KU Leuven; Swerts, J.

2016-01-25

Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. Amore » stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.« less

Multispectral surface plasmon resonance approach for ultra-thin silver layer characterization: Application to top-emitting OLED cathode

NASA Astrophysics Data System (ADS)

Taverne, S.; Caron, B.; Gétin, S.; Lartigue, O.; Lopez, C.; Meunier-Della-Gatta, S.; Gorge, V.; Reymermier, M.; Racine, B.; Maindron, T.; Quesnel, E.

2018-01-01

While dielectric/metal/dielectric (DMD) multilayer thin films have raised considerable interest as transparent and conductive electrodes in various optoelectronic devices, the knowledge of optical characteristics of thin metallic layers integrated in such structures is still rather approximate. The multispectral surface plasmon resonance characterization approach described in this work precisely aims at providing a rigorous methodology able to accurately determine the optical constants of ultra-thin metallic films. As a practical example, the refractive index and extinction dispersion curves of 8 to 25 nm-thick silver layers have been investigated. As a result, their extreme dependence on the layer thickness is highlighted, in particular in a thickness range close to the critical threshold value (˜10 nm) where the silver film becomes continuous and its electrical conductance/optical transmittance ratio particularly interesting. To check the validity of the revisited Ag layers constant dispersion curves deduced from this study, they were introduced into a commercial optical model software to simulate the behavior of various optoelectronic building blocks from the simplest ones (DMD electrodes) to much more complex structures [full organic light emitting device (OLED) stacks]. As a result, a much better prediction of the emission spectrum profile as well as the angular emission pattern of top-emitting OLEDs is obtained. On this basis, it is also shown how a redesign of the top encapsulation thin film of OLEDs is necessary to better take benefit from the advanced DMD electrode. These results should particularly interest the micro-OLED display field where bright and directive single color pixel emission is required.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and the strain is relaxed through hillock/island formation instead. The kinetics-limiting parameters for these relaxation modes are identified and used to simulate their kinetics, and a deformation map is then constructed to delineate the conditions under which each mode would prevail. Such a deformation map would prove useful when one seeks to optimize the thermal stability or other mechanical properties in any ultra-thin film system.

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

NASA Astrophysics Data System (ADS)

Chung, Chen-Yang; Zhu, Bin; Greene, Raymond G.; Thompson, Michael O.; Ast, Dieter G.

2015-11-01

We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 °C deposited c-axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 °C deposited amorphous IGZO layer. The TFT exhibits a saturation field-effect mobility of ˜20 cm2/V s, exceeding the mobility of 50 nm thick single layer reference TFTs fabricated with either material. The deposition temperature of the second layer influences the mobility of the underlying transport layer. When the cap layer is deposited at room temperature (RT), the mobility in the 310 °C deposited CAAC layer is initially low (6.7 cm2/V s), but rises continuously with time over 58 days to 20.5 cm2/V s, i.e., to the same value as when the second layer is deposited at 260 °C. This observation indicates that the two layers equilibrate at RT with a time constant on the order of 5 × 106 s. An analysis based on diffusive transport indicates that the room temperature diffusivity must be of the order of 1 × 10-18 cm2 s-1 with an activation enthalpy EA < 0.2 eV for the mobility limiting species. The findings are consistent with a hypothesis that the amorphous layer deposited on top of the CAAC has a higher solubility for impurities and/or structural defects than the underlying nanocrystalline transport layer, and that the equilibration of the mobility limiting species is rate limited by hydrogen diffusion, whose known diffusivity fits these estimates.

Surface modification of thin film composite membrane by nanoporous titanate nanoparticles for improving combined organic and inorganic antifouling properties.

PubMed

Emadzadeh, D; Ghanbari, M; Lau, W J; Rahbari-Sisakht, M; Rana, D; Matsuura, T; Kruczek, B; Ismail, A F

2017-06-01

In this study, nanoporous titanate (NT) nanoparticle synthesized by the solvothermal method was used to modify polyamide layer of thin film composite membranes with the aim of improving membrane resistances against organic and inorganic fouling. Thin film nanocomposite membranes (NMs) were synthesized by adding mNTs (modified nanoparticles) into polyamide selective layer followed by characterization using different analytical instruments. The results of XPS and XRD confirmed the presence of mNTs in the polyamide layer of NMs, while FESEM, AFM, zeta potential and contact angle measurement further supported the changes in physical and chemical properties of the membrane surface upon mNTs incorporation. Results of fouling showed that NM1 (the membrane incorporated with 0.01w/v% mNTs) always demonstrated lower degree of flux decline compared to the control membrane when membranes were tested with organic, inorganic and multicomponent synthesized water, brackish water or seawater. Besides showing greater antifouling resistance, the NM also displayed significantly higher water flux compared to the control M membrane. The findings of this work confirmed the positive impact of mNTs in improving the properties of NM with respect to fouling mitigation and flux improvement. Copyright © 2017. Published by Elsevier B.V.

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

PubMed

Stehlik, Stepan; Varga, Marian; Stenclova, Pavla; Ondic, Lukas; Ledinsky, Martin; Pangrac, Jiri; Vanek, Ondrej; Lipov, Jan; Kromka, Alexander; Rezek, Bohuslav

2017-11-08

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5-6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4-6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 10 13 cm -2 ), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiO x substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.

Investigation of porosity and heterojunction effects of a mesoporous hematite electrode on photoelectrochemical water splitting.

PubMed

Liu, Jingling; Shahid, Muhammad; Ko, Young-Seon; Kim, Eunchul; Ahn, Tae Kyu; Park, Jong Hyeok; Kwon, Young-Uk

2013-06-28

In this paper, we report the porosity and heterojunction effects of hematite (α-Fe2O3) on the photoelectrochemical (PEC) water splitting properties. The worm-like mesoporous hematite thin films (MHFs) with a pore size of ~9 nm and a wall thickness of ~5 nm were successfully obtained through the self-assembly process. MHFs formed on FTO showed much better PEC properties than those of nonporous hematite thin films (NP-HF) owing to the suppression of charge recombination. The PEC data of MHFs under front and back illumination conditions indicated that the porous structure allows the diffusion of electrolyte deep inside the MHF increasing the number of holes to be utilized in the water oxidation reaction. A heterojunction structure was formed by introducing a thin layer of SnO2 (~15 nm in thickness) between the MHF and FTO for a dramatically enhanced PEC response, which is attributed to the efficient electron transfer. Our spectroscopic and electrochemical data show that the SnO2 layer functions as an efficient electron transmitter, but does not affect the recombination kinetics of MHFs.

Domain Growth Kinetics in Stratifying Foam Films

NASA Astrophysics Data System (ADS)

Zhang, Yiran; Sharma, Vivek

2015-03-01

Baking bread, brewing cappuccino, pouring beer, washing dishes, shaving, shampooing, whipping eggs and blowing bubbles all involve creation of aqueous foam films. Typical foam films consist of two surfactant-laden surfaces that are μ 5 nm - 10 micron apart. Sandwiched between these interfacial layers is a fluid that drains primarily under the influence of viscous and interfacial forces, including disjoining pressure. Interestingly, for certain low molecular weight surfactants, a layered ordering of micelles inside the foam films (thickness <100 nm) leads to a stepwise thinning phenomena called stratification. We experimentally elucidate the influence of these different driving forces, and confinement on drainage kinetics of horizontal stratifying foam films. Thinner, darker domains spontaneously grow within foam films. Quantitative characterization of domain growth visualized in a using Scheludko-type thin film cell and a theoretical model based on lubrication analysis, provide critical insights into hydrodynamics of thin foam films, and the strength and nature of surface forces, including supramolecular oscillatory structural forces.

The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO 2/SiO 2 thin-film pairs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristau, Detlev; Papernov, S.; Kozlov, A. A.

2015-11-23

The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and an E-field peak and averagemore » intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO 2 and SiO 2 materials.« less

Thermoelectric properties of Zn4Sb3/CeFe(4-x)CoxSb12 nano-layered superlattices modified by MeV Si ion beam

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Minamisawa, R. A.; Muntele, C. I.; Ila, D.

2014-08-01

We prepared multilayers of superlattice thin film system with 50 periodic alternating nano-layers of semiconducting half-Heusler β-Zn4Sb3 and skutterudite CeFe2Co2Sb12 compound thin films using ion beam assisted deposition (IBAD) with Au layers deposited on both sides as metal contacts. The deposited multilayer thin films have alternating layers about 5 nm thick. The total thickness of the multilayer system is 275 nm. The superlattices were then bombarded by 5 MeV Si ion at six different fluences to form nano-cluster structures. The film thicknesses and composition were monitored by Rutherford backscattering spectrometry (RBS) before and after MeV ion bombardment. We have measured the thermoelectric efficiency, Figure of Merit ZT, of the fabricated device by measuring the cross plane thermal conductivity by the 3rd harmonic (3ω) method, the cross plane Seebeck coefficient, and the electrical conductivity using the van der Pauw method before and after the MeV ion bombardments. We reached the remarkable thermoelectric Figure of Merit results at optimal fluences.

Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO

NASA Astrophysics Data System (ADS)

Okada, N.; Morishita, N.; Mori, A.; Tsukada, T.; Tateishi, K.; Okamoto, K.; Tadatomo, K.

2017-04-01

Light-emitting diodes (LEDs) have been demonstrated with a thin p-type layer using the plasmonic effect. Optimal LED device operation was found when using a 20-nm-thick p+-GaN layer. Ag of different thicknesses was deposited on the thin p-type layer and annealed to form the localized Ag particles. The localized Ag particles were embedded by indium tin oxide to form a p-type electrode in the LED structure. By optimization of the plasmonic LED, the significant electroluminescence enhancement was observed when the thickness of Ag was 9.5 nm. Both upward and downward electroluminescence intensities were improved, and the external quantum efficiency was approximately double that of LEDs without the localized Ag particles. The time-resolved photoluminescence (PL) decay time for the LED with the localized Ag particles was shorter than that without the localized Ag particles. The faster PL decay time should cause the increase in internal quantum efficiency by adopting the localized Ag particles. To validate the localized surface plasmon resonance coupling effect, the absorption of the LEDs was investigated experimentally and using simulations.

Properties of reactively sputtered AlxNy thin films for pyroelectric detectors

NASA Astrophysics Data System (ADS)

Calvano, Nicholas; Chrostoski, Philip; Voshell, Andrew; Braithwaite, Keesean; Rana, Mukti

2017-08-01

Uncooled infrared detectors are utilized in various radiometric devices and cameras because of their low cost, light weight and performance. A pyroelectric detector is a class of uncooled infrared detector whose polarization changes with change in temperature. Infrared radiation from objects falls on top of the sensing layer of the pyroelectric detector and the absorbed radiation causes the temperature of the sensing layer to change. This work describes the deposition and characterization of AlxNy thin films for using them as pyroelectric detector's sensing material. To test the sensitivity of infrared detection or pyroelectric effect of AlxNy thin films, capacitors of various sizes were fabricated. The diameter of the electrodes for capacitor used during testing of the device was 1100 μm while the distances between these two electrodes was 1100 μm. On a 3-inch diameter cleaned silicon wafer, 100 nm thick AlxNy thin films were deposited by radio frequency (RF) sputtering from an Al target in Ar: N2 environment. On top of this, a 100-nm thick Au layer was deposited and lifted off by using conventional photo lithography to form the electrodes of capacitors. All the layers were deposited by RF sputtering at room temperature. The thin film samples were annealed at 700 °C in N2 environment for 10 minutes. X-ray diffraction showed the films are poly-crystalline with peaks in (100), (002) and (101) directions. When the temperature varied between 303 K to 353 K, the pyroelectric coefficient was increased from 8.60 × 10-9 C/m2K to 3.76 × 10-8C/m2K with a room temperature pyroelectric coefficient value of 8.60×10-9C/m2K. The non-annealed films were found to be transparent between the wavelengths of 600 nm to 3000 nm. The refraction coefficient was found to be varied between 2.0 and 2.2 while the extinction coefficient was found to be zero. The optical bandgap determined using Tauc's equation was 1.65 eV.

Unexpected structural and magnetic depth dependence of YIG thin films

NASA Astrophysics Data System (ADS)

Cooper, J. F. K.; Kinane, C. J.; Langridge, S.; Ali, M.; Hickey, B. J.; Niizeki, T.; Uchida, K.; Saitoh, E.; Ambaye, H.; Glavic, A.

2017-09-01

We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminum garnet (YAG) substrates, with and without thin Pt top layers. We provide three principal results: the observation of an interfacial region at the Pt/YIG interface, we place a limit on the induced magnetism of the Pt layer, and confirm the existence of an interfacial layer at the GGG/YIG interface. Polarized neutron reflectometry (PNR) was used to give depth dependence of both the structure and magnetism of these structures. We find that a thin film of YIG on GGG is best described by three distinct layers: an interfacial layer near the GGG, around 5 nm thick and nonmagnetic, a magnetic "bulk" phase, and a nonmagnetic and compositionally distinct thin layer near the surface. We theorize that the bottom layer, which is independent of the film thickness, is caused by Gd diffusion. The top layer is likely to be extremely important in inverse spin Hall effect measurements, and is most likely Y2O3 or very similar. Magnetic sensitivity in the PNR to any induced moment in the Pt is increased by the existence of the Y2O3 layer; any moment is found to be less than 0.02 μB/atom .

Limits to Maximum Absorption Length in Waveguide Photodiodes

DTIC Science & Technology

2011-04-13

InGaAsP to InGaAs graded layer (35 nm), a very thin undoped InGaAs absorber layer (20 nm), a p- InP cla~din~ layer (1 J.Lm, Zn = 1x1018 em·\\ a p- InP ...expected excess opticall_oss results from non-ideal coupling, excess waveguide scattering, Zn diffusion from the p-doped InP , larger than...waveguide scattering, Zn diffusion from the p-doped InP , n-doped region absorption, or a combination of the above. The SCOWPD has demonst:r:ated an

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinyanjui, M. K., E-mail: michael.kinyanjui@uni-ulm.de; Kaiser, U.; Benner, G.

2015-05-18

We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presentedmore » approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.« less

Synthesis and magnetic properties of the thin film exchange spring system of MnBi/FeCo

NASA Astrophysics Data System (ADS)

Sabet, S.; Hildebrandt, E.; Alff, L.

2017-10-01

Manganese bismuth thin films with a nominal thickness of ∼40 nm were grown at room temperature onto quartz glass substrate in a DC magnetron sputtering unit. In contrast to the usual multilayer approach, the MnBi films were deposited using a single sputtering target with a stoichiometry of Mn55Bi45 (at. %). A subsequent in-situ annealing step was performed in vacuum in order to form the ferromagnetic LTP of MnBi. X-ray diffraction confirmed the formation of a textured LTP MnBi hard phase after annealing at 330 °C. This film shows a maximum saturation magnetization of 530 emu/cm3, high out-of-plane coercivity of 15 kOe induced by unreacted bismuth. The exchange coupling effect was investigated by deposition of a second layer of FeCo with 1 nm and 2 nm thickness onto the LTP MnBi films. The MnBi/FeCo double layer showed as expected higher saturation magnetization with increasing thickness of the FeCo layer while the coercive field remained constant. The fabrication of the MnBi/FeCo double layer for an exchange spring magnet was facilitated by deposition from a single stoichiometric target.

Solid state dewetting of thin plasmonic films under focused cw-laser irradiation

DOE PAGES

Abbott, William M.; Corbett, Simon; Cunningham, Graeme; ...

2017-12-21

Elevated temperatures and large thermal gradients are a significant source of component failure in microelectronics, and is the limiting factor in heat-assisted magnetic recording (HAMR). Here, we have investigated the effect of solid-state dewetting in Au thin films, as a function of local temperature, film thickness, and substrate adhesion. In this work, a localised temperature rise is induced in thin (≤ 50 nm) polycrystalline Au films on SiO 2 substrates via focused continuous-wave laser irradiation at 488 nm. The magnitude and distribution of the total temperature rise is measured using CCD-based thermoreflectance. This also allows a sensitive measurement of themore » temperature at which dewetting occurs, showing that for thin (≤ 50 nm) Au films without adhesion layers, rapid dewetting can occur at temperatures as low as 50° C. The time decay of the reflected light from the illuminating laser is used to monitor locally the dynamics of solid state dewetting. TEM diffraction analysis shows significant changes in the microstructure and crystallographic texture of the films as far as 10 µm away from the illuminated area. The use of a thin metallic adhesion layer (such as Ti or Cr) is shown to significantly improve the adhesion of the Au to the substrate and reduce the tendency towards dewetting, but does not entirely protect it from changes to the crystallographic texture.« less

Solid state dewetting of thin plasmonic films under focused cw-laser irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbott, William M.; Corbett, Simon; Cunningham, Graeme

Elevated temperatures and large thermal gradients are a significant source of component failure in microelectronics, and is the limiting factor in heat-assisted magnetic recording (HAMR). Here, we have investigated the effect of solid-state dewetting in Au thin films, as a function of local temperature, film thickness, and substrate adhesion. In this work, a localised temperature rise is induced in thin (≤ 50 nm) polycrystalline Au films on SiO 2 substrates via focused continuous-wave laser irradiation at 488 nm. The magnitude and distribution of the total temperature rise is measured using CCD-based thermoreflectance. This also allows a sensitive measurement of themore » temperature at which dewetting occurs, showing that for thin (≤ 50 nm) Au films without adhesion layers, rapid dewetting can occur at temperatures as low as 50° C. The time decay of the reflected light from the illuminating laser is used to monitor locally the dynamics of solid state dewetting. TEM diffraction analysis shows significant changes in the microstructure and crystallographic texture of the films as far as 10 µm away from the illuminated area. The use of a thin metallic adhesion layer (such as Ti or Cr) is shown to significantly improve the adhesion of the Au to the substrate and reduce the tendency towards dewetting, but does not entirely protect it from changes to the crystallographic texture.« less

Improving Powder Magnetic Core Properties via Application of Thin, Insulating Silica-Nanosheet Layers on Iron Powder Particles

PubMed Central

Ishizaki, Toshitaka; Nakano, Hideyuki; Tajima, Shin; Takahashi, Naoko

2016-01-01

A thin, insulating layer with high electrical resistivity is vital to achieving high performance of powder magnetic cores. Using layer-by-layer deposition of silica nanosheets or colloidal silica over insulating layers composed of strontium phosphate and boron oxide, we succeeded in fabricating insulating layers with high electrical resistivity on iron powder particles, which were subsequently used to prepare toroidal cores. The compact density of these cores decreased after coating with colloidal silica due to the substantial increase in the volume, causing the magnetic flux density to deteriorate. Coating with silica nanosheets, on the other hand, resulted in a higher electrical resistivity and a good balance between high magnetic flux density and low iron loss due to the thinner silica layers. Transmission electron microscopy images showed that the thickness of the colloidal silica coating was about 700 nm, while that of the silica nanosheet coating was 30 nm. There was one drawback to using silica nanosheets, namely a deterioration in the core mechanical strength. Nevertheless, the silica nanosheet coating resulted in nanoscale-thick silica layers that are favorable for enhancing the electrical resistivity. PMID:28336835

DOE Office of Scientific and Technical Information (OSTI.GOV)

Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.

Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO 2 and SiO 2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO 2 single-layer film and for a film containing seven narrow HfO 2 layers separated by SiO 2 layers. The seven-layer film was designed to have a total optical thickness of HfO 2 layers, equal to one wave at 355 nm and anmore » E-field peak and average intensity similar to a single-layer HfO 2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO 2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO 2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO 2 and SiO 2 materials.« less

High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors

NASA Astrophysics Data System (ADS)

Yao, Rihui; Zhang, Hongke; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Li, Xiaoqing; Zhang, Xiaochen; Cai, Wei; Lu, Xubing; Peng, Junbiao

2018-02-01

In this study, high conductivity and transparent multi-layer (AZO/Al/AZO-/Al/AZO) source/drain (S/D) electrodes for thin film transistors were fabricated via conventional physical vapor deposition approaches, without toxic elements or further thermal annealing process. The 68 nm-thick multi-layer films with excellent optical properties (transparency: 82.64%), good electrical properties (resistivity: 6.64  ×  10-5 Ω m, work function: 3.95 eV), and superior surface roughness (R q   =  0.757 nm with scanning area of 5  ×  5 µm2) were fabricated as the S/D electrodes. Significantly, comprehensive performances of AZO films are enhanced by the insertion of ultra-thin Al layers. The optimal transparent TFT with this multi-layer S/D electrodes exhibited a decent electrical performance with a saturation mobility (µ sat) of 3.2 cm2 V-1 s-1, an I on/I off ratio of 1.59  ×  106, a subthreshold swing of 1.05 V/decade. The contact resistance of AZO/Al/AZO/Al/AZO multi-layer electrodes is as low as 0.29 MΩ. Moreover, the average visible light transmittance of the unpatterned multi-layers constituting a whole transparent TFT could reach 72.5%. The high conductivity and transparent multi-layer S/D electrodes for transparent TFTs possessed great potential for the applications of the green and transparent displays industry.

Phosphorene-directed self-assembly of asymmetric PS-b-PMMA block copolymer for perpendicularly-oriented sub-10 nm PS nanopore arrays

NASA Astrophysics Data System (ADS)

Zhang, Ziming; Zheng, Lu; Khurram, Muhammad; Yan, Qingfeng

2017-10-01

Few-layer black phosphorus, also known as phosphorene, is a new two-dimensional material which is of enormous interest for applications, mainly in electronics and optoelectronics. Herein, we for the first time employ phosphorene for directing the self-assembly of asymmetric polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymer (BCP) thin film to form the perpendicular orientation of sub-10 nm PS nanopore arrays in a hexagonal fashion normal to the interface. We experimentally demonstrate that none of the PS and PMMA blocks exhibit preferential affinity to the phosphorene-modified surface. Furthermore, the perpendicularly-oriented PS nanostructures almost stay unchanged with the variation of number of layers of few-layer phosphorene nanoflakes between 15-30 layers. Differing from the neutral polymer brushes which are widely used for chemical modification of the silicon substrate, phosphorene provides a novel physical way to control the interfacial interactions between the asymmetric PS-b-PMMA BCP thin film and the silicon substrate. Based on our results, it is possible to build a new scheme for producing sub-10 nm PS nanopore arrays oriented perpendicularly to the few-layer phosphorene nanoflakes. Furthermore, the nanostructural microdomains could serve as a promising nanolithography template for surface patterning of phosphorene nanoflakes.

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

PubMed Central

2014-01-01

Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded. PMID:25024692

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

Ultrathin free-standing close-packed gold nanoparticle films: conductivity and Raman scattering enhancement.

PubMed

Yu, Qing; Huang, Hongwen; Peng, Xinsheng; Ye, Zhizhen

2011-09-01

A simple filtration technique was developed to prepare large scale free-standing close-packed gold nanoparticle ultrathin films using metal hydroxide nanostrands as both barrier layer and sacrificial layer. As thin as 70 nm, centimeter scale robust free-standing gold nanoparticle thin film was obtained. The thickness of the films could be easily tuned by the filtration volumes. The electronic conductivities of these films varied with the size of the gold nanoparticles, post-treatment temperature, and thickness, respectively. The conductivity of the film prepared from 20 nm gold nanoparticles is higher than that of the film prepared from 40 nm gold nanoparticle by filtering the same filtration volume of their solution, respectively. Their conductivities are comparable to that of the 220 nm thick ITO film. Furthermore, these films demonstrated an average surface Raman scattering enhancement up to 6.59 × 10(5) for Rhodamine 6 G molecules on the film prepared from 40 nm gold nanoparticles. Due to a lot of nano interspaces generated from the close-packed structures, two abnormal enhancements and relative stronger intensities of the asymmetrical vibrations at 1534 and 1594 cm(-1) of R6G were observed, respectively. These robust free-standing gold nanoparticle films could be easily transferred onto various solid substrates and hold the potential application for electrodes and surface enhanced Raman detectors. This method is applicable for preparation of other nanoparticle free-standing thin films.

Cluster Tool for In Situ Processing and Comprehensive Characterization of Thin Films at High Temperatures.

PubMed

Wenisch, Robert; Lungwitz, Frank; Hanf, Daniel; Heller, René; Zscharschuch, Jens; Hübner, René; von Borany, Johannes; Abrasonis, Gintautas; Gemming, Sibylle; Escobar-Galindo, Ramon; Krause, Matthias

2018-06-13

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy, and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/amorphous Si (∼60 nm)/Ag (∼30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650 °C. Its initial and final composition, stacking order, and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

Specific features of single-pulse femtosecond laser micron and submicron ablation of a thin silver film coated with a micron-thick photoresist layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zayarnyi, D A; Ionin, A A; Kudryashov, S I

Specific features of ablation of a thin silver film with a 1-μm-thick layer of a highly transparent photoresist and the same film without a photoresist layer under single tightly focused femtosecond laser pulses in the visible range (515 nm) are experimentally investigated. Interference effects of internal modification of the photoresist layer, its spallation ablation from the film surface and formation of through hollow submicron channels in the resist without its spallation but with ablation of the silver film lying under the resist are found and discussed. (extreme light fields and their applications)

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

Optimization of the antireflection coating of thin epitaxial crystalline silicon solar cells

DOE PAGES

Selj, Josefine K.; Young, David; Grover, Sachit

2015-08-28

In this study we use an effective weighting function to include the internal quantum efficiency (IQE) and the effective thickness, Te, of the active cell layer in the optical modeling of the antireflection coating (ARC) of very thin crystalline silicon solar cells. The spectrum transmitted through the ARC is hence optimized for efficient use in the given cell structure and the solar cell performance can be improved. For a 2-μm thick crystalline silicon heterojunction solar cell the optimal thickness of the Indium Tin Oxide (ITO) ARC is reduced by ~8 nm when IQE data and effective thickness are taken intomore » account compared to the standard ARC optimization, using the AM1.5 spectrum only. The reduced ARC thickness will shift the reflectance minima towards shorter wavelengths and hence better match the absorption of very thin cells, where the short wavelength range of the spectrum is relatively more important than the long, weakly absorbed wavelengths. For this cell, we find that the optimal thickness of the ITO starts at 63 nm for very thin (1 μm) active Si layer and then increase with increasing T e until it saturates at 71 nm for T e > 30 μm.« less

Fully-Polymeric pH Sensor Realized by Means of a Single-Step Soft Embossing Technique

PubMed Central

Fanzio, Paola; Chang, Chi-Tung; Skolimowski, Maciej; Tanzi, Simone; Sasso, Luigi

2017-01-01

We present here an electrochemical sensor microsystem for the monitoring of pH. The all-polymeric device is comprised of a cyclic olefin copolymer substrate, a 200 nm-thin patterned layer of conductive polymer (PEDOT), and a 70 nm electropolymerized layer of a pH sensitive conductive polymer (polyaniline). The patterning of the fluidic (microfluidic channels) and conductive (wiring and electrodes) functional elements was achieved with a single soft PDMS mold via a single embossing step process. A post-processing treatment with ethylene glycol assured the functional enhancement of the electrodes, as demonstrated via an electrical and electrochemical characterization. A surface modification of the electrodes was carried out, based on voltammetric electropolymerization, to obtain a thin layer of polyaniline. The mechanism for pH sensing is based on the redox reactions of the polyaniline layer caused by protonation. The sensing performance of the microsystem was finally validated by monitoring its potentiometric response upon exposure to a relevant range of pH. PMID:28531106

Fully-Polymeric pH Sensor Realized by Means of a Single-Step Soft Embossing Technique.

PubMed

Fanzio, Paola; Chang, Chi-Tung; Skolimowski, Maciej; Tanzi, Simone; Sasso, Luigi

2017-05-20

We present here an electrochemical sensor microsystem for the monitoring of pH. The all-polymeric device is comprised of a cyclic olefin copolymer substrate, a 200 nm-thin patterned layer of conductive polymer (PEDOT), and a 70 nm electropolymerized layer of a pH sensitive conductive polymer (polyaniline). The patterning of the fluidic (microfluidic channels) and conductive (wiring and electrodes) functional elements was achieved with a single soft PDMS mold via a single embossing step process. A post-processing treatment with ethylene glycol assured the functional enhancement of the electrodes, as demonstrated via an electrical and electrochemical characterization. A surface modification of the electrodes was carried out, based on voltammetric electropolymerization, to obtain a thin layer of polyaniline. The mechanism for pH sensing is based on the redox reactions of the polyaniline layer caused by protonation. The sensing performance of the microsystem was finally validated by monitoring its potentiometric response upon exposure to a relevant range of pH.

Performance regeneration of InGaZnO transistors with ultra-thin channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Binglei; Li, He; Zhang, Xijian, E-mail: zhangxijian@sdu.edu.cn, E-mail: songam@sdu.edu.cn

2015-03-02

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devicesmore » was also studied over a four month period.« less

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

NASA Astrophysics Data System (ADS)

Berthier, R.; Bernier, N.; Cooper, D.; Sabbione, C.; Hippert, F.; Noé, P.

2017-09-01

The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has been developed to improve sample quality and stability during in situ annealing, enabling quantitative analysis and live recording of phase change events. Results show that for an uncapped 100 nm thick GeTe layer, exposure to air after fabrication leads to composition changes which promote heterogeneous nucleation at the oxidized surface. We also demonstrate that protecting the GeTe layer with a 10 nm SiN capping layer prevents nucleation at the surface and allows volume nucleation at a temperature 50 °C higher than the onset of crystallization in the oxidized sample. Our results have important implications regarding the integration of these materials in confined memory cells.

Amino-functionalized sub-40 nm ultrathin Ag/ZnO transparent electrodes for flexible polymer dispersed liquid crystal devices

NASA Astrophysics Data System (ADS)

Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie

2017-11-01

Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.

Thin-film ultraviolet detector and spectrometer

NASA Technical Reports Server (NTRS)

Lewicki, G. W.; Maserjian, J.

1972-01-01

Typical metal-insulator-metal detector device is formed on quartz substrate. Base electrode is 3 to 6 nm aluminum layer, overcoated with 3 to 6 nm aluminum oxide or aluminum nitride, and capped with counter electrode of gold, lead, magnesium, or aluminum. Photoelectric yield data are given for Al-AlN-Au structure.

Adsorbed water and thin liquid films on Mars

NASA Astrophysics Data System (ADS)

Boxe, C. S.; Hand, K. P.; Nealson, K. H.; Yung, Y. L.; Yen, A. S.; Saiz-Lopez, A.

2012-07-01

At present, bulk liquid water on the surface and near-subsurface of Mars does not exist due to the scarcity of condensed- and gas-phase water, pressure and temperature constraints. Given that the nuclei of soil and ice, that is, the soil solid and ice lattice, respectively, are coated with adsorbed and/or thin liquid films of water well below 273 K and the availability of water limits biological activity, we quantify lower and upper limits for the thickness of such adsorbed/water films on the surface of the Martian regolith and for subsurface ice. These limits were calculated based on experimental and theoretical data for pure water ice and water ice containing impurities, where water ice containing impurities exhibit thin liquid film enhancements, ranging from 3 to 90. Close to the cold limit of water stability (i.e. 273 K), thin liquid film thicknesses at the surface of the Martian regolith is 0.06 nm (pure water ice) and ranges from 0.2 to 5 nm (water ice with impurities). An adsorbed water layer of 0.06 nm implies a dessicated surface as the thickness of one monolayer of water is 0.3 nm but represents 0.001-0.02% of the Martian atmospheric water vapour inventory. Taking into account the specific surface area (SSA) of surface-soil (i.e. top 1 mm of regolith and 0.06 nm adsorbed water layer), shows Martian surface-soil may contain interfacial water that represents 6-66% of the upper- and lower-limit atmospheric water vapour inventory and almost four times and 33%, the lower- and upper-limit Martian atmospheric water vapour inventory. Similarly, taking the SSA of Martian soil, the top 1 mm or regolith at 5 nm thin liquid water thickness, yields 1.10×1013 and 6.50×1013 litres of waters, respectively, 55-325 times larger than Mars' atmospheric water vapour inventory. Film thicknesses of 0.2 and 5 nm represent 2.3×104-1.5×106 litres of water, which is 6.0×10-7-4.0×10-4%, respectively, of a 10 pr μm water vapour column, and 3.0×10-6-4.0×10-4% and 6.0×10-6-8.0×10-4%, respectively, of the Martian atmospheric water vapour inventory. Thin liquid film thicknesses on/in subsurface ice were investigated via two scenarios: (i) under the idealistic case where it is assumed that the diurnal thermal wave is equal to the temperature of ice tens of centimetres below the surface, allowing for such ice to experience temperatures close to 273 K and (ii) under the, likely, realistic scenario where the diurnal thermal wave allows for the maximum subsurface ice temperature of 235 K at 1 m depth between 30°N and 30°S. Scenario 1 yields thin liquid film thicknesses ranging from 11 to 90 nm; these amounts represent 4×106-3.0×107 litres of water. For pure water ice, Scenario 2 reveals that the thickness of thin liquid films contained on/within Martian subsurface is less than 1.2 nm, several molecular layers thick. Conversely, via the effect of impurities at 235 K allows for a thin liquid film thickness on/within subsurface ice of 0.5 nm, corresponding to 6.0×104 litres of water. The existence of thin films on Mars is supported by data from the Mars Exploration Rovers (MERs) Spirit and Opportunity's Alpha Proton X-ray Spectrometer instrumentation, which have detected increased levels of bromine beneath the immediate surface, suggestive of the mobilization of soluble salts by thin films of liquid water towards local cold traps. These findings show that biological activity on the Martian surface and subsurface is not limited by nanometre dimensions of available water.

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE PAGES

Wang, Lei; Yan, Danhua; Shaffer, David W.; ...

2017-12-27

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Improved Stability and Performance of Visible Photoelectrochemical Water Splitting on Solution-Processed Organic Semiconductor Thin Films by Ultrathin Metal Oxide Passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lei; Yan, Danhua; Shaffer, David W.

Solution-processable organic semiconductors have potentials as visible photoelectrochemical (PEC) water splitting photoelectrodes due to their tunable small band gap and electronic energy levels, but they are typically limited by poor stability and photocatalytic activity. In this study, we demonstrate the direct visible PEC water oxidation on solution-processed organic semiconductor thin films with improved stability and performance by ultrathin metal oxide passivation layers. N-type fullerene-derivative thin films passivated by sub-2 nm ZnO via atomic layer deposition enabled the visible PEC water oxidation at wavelengths longer than 600 nm in harsh alkaline electrolyte environments with up to 30 μA/cm 2 photocurrents atmore » the thermodynamic water-oxidation equilibrium potential and the photoanode half-lifetime extended to ~1000 s. The systematic investigation reveals the enhanced water oxidation catalytic activity afforded by ZnO passivation and the charge tunneling governing the hole transfer through passivation layers. Further enhanced PEC performances were realized by improving the bottom ohmic contact to the organic semiconductor, achieving ~60 μA/cm 2 water oxidation photocurrent at the equilibrium potential, the highest values reported for organic semiconductor thin films to our knowledge. The improved stability and performance of passivated organic photoelectrodes and discovered design rationales provide useful guidelines for realizing the stable visible solar PEC water splitting based on organic semiconductor thin films.« less

Updateable 3D Display Using Large Area Photorefractive Polymer Devices

DTIC Science & Technology

2013-04-01

across the thin PR layer. The critical parameters for the buffer layer are: transparent over the range 400nm to 800nm, high dielectric strength , ease of...Holographic 3D Display for Telepresence". Holo- pack.Holo- print 2011, November 9th 2011, (Las-Vegas, NV).  J. Thomas et al., "Recent advances in...AFRL-OSR-VA-TR-2013-0199 Updateable 3D Display Using Large Area Photofractive Polymer Devics Pierre Alexandre Blanche TIPD

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

PubMed Central

Saadaoui, Saif; Ben Youssef, Mohamed Aziz; Ben Karoui, Moufida; Smecca, Emanuele; Strano, Vincenzina; Mirabella, Salvo; Alberti, Alessandra; Puglisi, Rosaria A

2017-01-01

In this work, two natural dyes extracted from henna and mallow plants with a maximum absorbance at 665 nm were studied and used as sensitizers in the fabrication of dye-sensitized solar cells (DSSCs). Fourier transform infrared (FTIR) spectra of the extract revealed the presence of anchoring groups and coloring constituents. Two different structures were prepared by chemical bath deposition (CBD) using zinc oxide (ZnO) layers to obtain ZnO nanowall (NW) or nanorod (NR) layers employed as a thin film at the photoanode side of the DSSC. The ZnO layers were annealed at different temperatures under various gas sources. Indeed, the forming gas (FG) (N2/H2 95:5) was found to enhance the conductivity by a factor of 103 compared to nitrogen (N2) or oxygen (O2) annealing gas. The NR width varied between 40 and 100 nm and the length from 500 to 1000 nm, depending on the growth time. The obtained NWs had a length of 850 nm. The properties of the developed ZnO NW and NR layers with different thicknesses and their effect on the photovoltaic parameters were studied. An internal coverage of the ZnO NWs was also applied by the deposition of a thin TiO2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current J sc by seven times from 2.45 × 10−3 mA/cm2 to 1.70 × 10−2 mA /cm2. PMID:28243567

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes.

PubMed

Saadaoui, Saif; Ben Youssef, Mohamed Aziz; Ben Karoui, Moufida; Gharbi, Rached; Smecca, Emanuele; Strano, Vincenzina; Mirabella, Salvo; Alberti, Alessandra; Puglisi, Rosaria A

2017-01-01

In this work, two natural dyes extracted from henna and mallow plants with a maximum absorbance at 665 nm were studied and used as sensitizers in the fabrication of dye-sensitized solar cells (DSSCs). Fourier transform infrared (FTIR) spectra of the extract revealed the presence of anchoring groups and coloring constituents. Two different structures were prepared by chemical bath deposition (CBD) using zinc oxide (ZnO) layers to obtain ZnO nanowall (NW) or nanorod (NR) layers employed as a thin film at the photoanode side of the DSSC. The ZnO layers were annealed at different temperatures under various gas sources. Indeed, the forming gas (FG) (N 2 /H 2 95:5) was found to enhance the conductivity by a factor of 10 3 compared to nitrogen (N 2 ) or oxygen (O 2 ) annealing gas. The NR width varied between 40 and 100 nm and the length from 500 to 1000 nm, depending on the growth time. The obtained NWs had a length of 850 nm. The properties of the developed ZnO NW and NR layers with different thicknesses and their effect on the photovoltaic parameters were studied. An internal coverage of the ZnO NWs was also applied by the deposition of a thin TiO 2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current J sc by seven times from 2.45 × 10 -3 mA/cm 2 to 1.70 × 10 -2 mA /cm 2 .

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties.

PubMed

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj; Deferme, Wim

2018-02-13

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10-20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

NASA Astrophysics Data System (ADS)

Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

2016-09-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

NASA Astrophysics Data System (ADS)

Pligovka, A.; Zakhlebayeva, A.; Lazavenka, A.

2018-03-01

Niobium oxide nanocolumns with modulated diameters were formed for the first time. An Al/Nb bilayer specimen was prepared by successive sputter-deposition of 300 nm niobium layer and 1200 nm aluminum layer onto silicon wafer. Regular anodic alumina matrix with modulated pore diameters was formed by sequential anodization of initial specimen in tartaric acid at 180 V, and in oxalic acid at 37 V. Further potentiodynamic reanodization of the specimen up to 400 V causes the simultaneous growth of 440 nm continuous niobium oxide layer beneath the alumina film and two types of an array of oxide nanocolumns (thick – with 100 nm width and 630 nm high and thin – with 25 nm width and 170 nm high), which are the filling of the alumina pores. The morphology of the formed anodic niobium oxide nanocolumns with modulated diameters was determined by field emission scanning electron microscopy. The formed nanostructures can be used for perspective devices of nano- and optoelectronics such as photonic crystals.

Tailoring Curie temperature and magnetic anisotropy in ultrathin Pt/Co/Pt films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parakkat, Vineeth Mohanan; Ganesh, K. R.; Anil Kumar, P. S., E-mail: anil@physics.iisc.ernet.in

The dependence of perpendicular magnetization and Curie temperature (T{sub c}) of Pt/Co/Pt thin films on the thicknesses of Pt seed (Pt{sub s}) and presence of Ta buffer layer has been investigated in this work. Pt and Co thicknesses were varied between 2 to 8 nm and 0.35 to 1.31 nm (across the spin reorientation transition thickness) respectively and the T{sub c} was measured using SQUID magnetometer. We have observed a systematic dependence of T{sub c} on the thickness of Pt{sub s}. For 8 nm thickness of Pt{sub s} the Co layer of 0.35 nm showed ferromagnetism with perpendicular anisotropy atmore » room temperature. As the thickness of the Pt{sub s} was decreased to 2 nm, the T{sub c} went down below 250 K. XRD data indicated polycrystalline growth of Pt{sub s} on SiO{sub 2}. On the contrary Ta buffer layer promoted the growth of Pt(111). As a consequence Ta(5 nm)/Pt(3 nm)/Co(0.35 nm)/Pt(2 nm) had much higher T{sub c} (above 300 K) with perpendicular anisotropy when compared to the same stack without the Ta layer. Thus we could tune the ferromagnetic T{sub c} and anisotropy by varying the Pt{sub s} thickness and also by introducing Ta buffer layer. We attribute these observations to the micro-structural evolution of Pt{sub s} layer which hosts the Co layer.« less

Water Sorption in Electron-Beam Evaporated SiO2 on QCM Crystals and Its Influence on Polymer Thin Film Hydration Measurements.

PubMed

Kushner, Douglas I; Hickner, Michael A

2017-05-30

Spectroscopic ellipsometry (SE) and quartz crystal microbalance (QCM) measurements are two critical characterization techniques routinely employed for hydration studies of polymer thin films. Water uptake by thin polymer films is an important area of study to investigate antifouling surfaces, to probe the swelling of thin water-containing ionomer films, and to conduct fundamental studies of polymer brush hydration and swelling. SiO 2 -coated QCM crystals, employed as substrates in many of these hydration studies, show porosity in the thin electron-beam (e-beam) evaporated SiO 2 layer. The water sorption into this porous SiO 2 layer requires correction of the optical and mass characterization of the hydrated polymer due to changes in the SiO 2 layer as it sorbs water. This correction is especially important when experiments on SiO 2 -coated QCM crystals are compared to measurements on Si wafers with dense native SiO 2 layers. Water adsorption filling void space during hydration in ∼200-260 nm thick SiO 2 layers deposited on a QCM crystal resulted in increased refractive index of the layer during water uptake experiments. The increased refractive index led to artificially higher polymer swelling in the optical modeling of the hydration experiments. The SiO 2 -coated QCM crystals showed between 6 and 8% void as measured by QCM and SE, accounting for 60%-85% of the measured polymer swelling in the low humidity regime (<20% RH) and 25%-40% of the polymer swelling in the high humidity regime (>70% RH) from optical modeling for 105 and 47 nm thick sulfonated polymer films. Correcting the refractive index of the SiO 2 layer for its water content resulted in polymer swelling that successfully resembled swelling measured on a silicon wafer with nonporous native oxide.

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Fabrication of scrolled magnetic thin film patterns

NASA Astrophysics Data System (ADS)

Min, Seonggi; Lim, Jin-Hee; Gaffney, John; Kinttle, Kristofer; Wiley, John B.; Malkinski, Leszek

2012-04-01

Magnetic film scrolls have been fabricated via a deterministic release of rectangular patterns of bimetallic Ti (20 nm)/Ni (20 , 30 or 40 nm) films from a sacrificial Cu underlayer. The diameter of the scrolls varied from 2.64 μm to 4.28 μm with increasing thickness of the Ni layer from 20 to 40 nm. This behavior was found to be consistent with the model of bilayered film with interfacial strain between the Ti and Ni layers of about Δɛ = 0.01. Changing the geometry of the patterns from flat patterns to scrolls led to changes in their magnetic properties.

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

Electro-Optic Effect in Thin Films of a Dielectric and a Ferroelectric with Subwavelength Aluminum Grating

NASA Astrophysics Data System (ADS)

Blinov, L. M.; Lazarev, V. V.; Yudin, S. G.; Artemov, V. V.; Palto, S. P.; Gorkunov, M. V.

2018-01-01

The electro-optic effect in three nanoscale heterostructures, in each of which a thin layer of dielectric or ferroelectric material is inserted between two planar metal electrodes, has been studied. Each structure has one aluminum layer, containing a subwavelength grating with a period of 400 nm, contacting with either the glass substrate or air. The light transmission spectra of structures with subwavelength grating contain characteristic plasmon dips. Short external-voltage pulses affect the change in the refractive index of the corresponding active layer. Significant values of these changes may be useful for designing optical modulators.

All-Aluminum Thin Film Transistor Fabrication at Room Temperature.

PubMed

Yao, Rihui; Zheng, Zeke; Zeng, Yong; Liu, Xianzhe; Ning, Honglong; Hu, Shiben; Tao, Ruiqiang; Chen, Jianqiu; Cai, Wei; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao

2017-02-23

Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al₂O₃) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al₂O₃ heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.2-nm-thick Al₂O₃ layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd) and pure Al, with Al₂O₃/AZO multilayered channel and AlO x :Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al₂O₃/AZO heterojunction units exhibited a mobility of 2.47 cm²/V·s and an I on / I off ratio of 10⁶. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

PubMed Central

Ahn, Cheol Hyoun; Senthil, Karuppanan; Cho, Hyung Koun; Lee, Sang Yeol

2013-01-01

High-performance thin-film transistors (TFTs) are the fundamental building blocks in realizing the potential applications of the next-generation displays. Atomically controlled superlattice structures are expected to induce advanced electric and optical performance due to two-dimensional electron gas system, resulting in high-electron mobility transistors. Here, we have utilized a semiconductor/insulator superlattice channel structure comprising of ZnO/Al2O3 layers to realize high-performance TFTs. The TFT with ZnO (5 nm)/Al2O3 (3.6 nm) superlattice channel structure exhibited high field effect mobility of 27.8 cm2/Vs, and threshold voltage shift of only < 0.5 V under positive/negative gate bias stress test during 2 hours. These properties showed extremely improved TFT performance, compared to ZnO TFTs. The enhanced field effect mobility and stability obtained for the superlattice TFT devices were explained on the basis of layer-by-layer growth mode, improved crystalline nature of the channel layers, and passivation effect of Al2O3 layers. PMID:24061388

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Ultra-thin, single-layer polarization rotator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, T. V.; Truong, V. V., E-mail: Truong.Vo-Van@Concordia.Ca; Do, P. A.

We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 10{sup 3} when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

Efficient methylammonium lead iodide perovskite solar cells with active layers from 300 to 900 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momblona, C.; Malinkiewicz, O.; Soriano, A.

2014-08-01

Efficient methylammonium lead iodide perovskite-based solar cells have been prepared in which the perovskite layer is sandwiched in between two organic charge transporting layers that block holes and electrons, respectively. This configuration leads to stable and reproducible devices that do not suffer from strong hysteresis effects and when optimized lead to efficiencies close to 15%. The perovskite layer is formed by using a dual-source thermal evaporation method, whereas the organic layers are processed from solution. The dual-source thermal evaporation method leads to smooth films and allows for high precision thickness variations. Devices were prepared with perovskite layer thicknesses ranging frommore » 160 to 900 nm. The short-circuit current observed for these devices increased with increasing perovskite layer thickness. The main parameter that decreases with increasing perovskite layer thickness is the fill factor and as a result optimum device performance is obtained for perovskite layer thickness around 300 nm. However, here we demonstrate that with a slightly oxidized electron blocking layer the fill factor for the solar cells with a perovskite layer thickness of 900 nm increases to the same values as for the devices with thin perovskite layers. As a result the power conversion efficiencies for the cells with 300 and 900 nm are very similar, 12.7% and 12%, respectively.« less

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

PubMed Central

Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

2016-01-01

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10−5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials. PMID:26860816

Paths to light trapping in thin film GaAs solar cells.

PubMed

Xiao, Jianling; Fang, Hanlin; Su, Rongbin; Li, Kezheng; Song, Jindong; Krauss, Thomas F; Li, Juntao; Martins, Emiliano R

2018-03-19

It is now well established that light trapping is an essential element of thin film solar cell design. Numerous light trapping geometries have already been applied to thin film cells, especially to silicon-based devices. Less attention has been paid to light trapping in GaAs thin film cells, mainly because light trapping is considered less attractive due to the material's direct bandgap and the fact that GaAs suffers from strong surface recombination, which particularly affects etched nanostructures. Here, we study light trapping structures that are implemented in a high-bandgap material on the back of the GaAs active layer, thereby not perturbing the integrity of the GaAs active layer. We study photonic crystal and quasi-random nanostructures both by simulation and by experiment and find that the photonic crystal structures are superior because they exhibit fewer but stronger resonances that are better matched to the narrow wavelength range where GaAs benefits from light trapping. In fact, we show that a 1500 nm thick cell with photonic crystals achieves the same short circuit current as an unpatterned 4000 nm thick cell. These findings are significant because they afford a sizeable reduction in active layer thickness, and therefore a reduction in expensive epitaxial growth time and cost, yet without compromising performance.

Elastic and fracture properties of free-standing amorphous ALD Al2O3 thin films measured with bulge test

NASA Astrophysics Data System (ADS)

Rontu, Ville; Nolvi, Anton; Hokkanen, Ari; Haeggström, Edward; Kassamakov, Ivan; Franssila, Sami

2018-04-01

We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atomic layer deposition (ALD) with bulge test technique using a free-standing thin film membrane and extended applicability of bulge test technique. Elastic modulus was determined to be 115 GPa for a 50 nm thick film and 170 GPa for a 15 nm thick film. Residual stress was 142 MPa in the 50 nm Al2O3 film while it was 116 MPa in the 15 nm Al2O3 film. Density was 3.11 g cm‑3 for the 50 nm film and 3.28 g cm‑3 for the 15 nm film. Fracture strength at 100 hPa s‑1 pressure ramp rate was 1.72 GPa for the 50 nm film while for the 15 nm film it was 4.21 GPa, almost 2.5-fold. Fracture strength was observed to be positively strain-rate dependent. Weibull moduli of these films were very high being around 50. The effective volume of a circular film in bulge test was determined from a FEM model enabling future comparison of fracture strength data between different techniques.

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Unraveling the Dynamics of Nanoscopically Confined PVME in Thin Films of a Miscible PVME/PS Blend.

PubMed

Madkour, Sherif; Szymoniak, Paulina; Radnik, Jörg; Schönhals, Andreas

2017-10-25

Broadband dielectric spectroscopy (BDS) was employed to investigate the glassy dynamics of thin films (7-200 nm) of a poly(vinyl methyl ether) (PVME)/polystyrene (PS) blend (50:50 wt %). For BDS measurements, nanostructured capacitors (NSCs) were employed, where films are allowed a free surface. This method was applied for film thicknesses up to 36 nm. For thicker films, samples were prepared between crossed electrode capacitors (CECs). The relaxation spectra of the films showed multiple processes. The first process was assigned to the α-relaxation of a bulklike layer. For films measured by NSCs, the rates of α-relaxation were higher compared to those of the bulk blend. This behavior was related to the PVME-rich free surface layer at the polymer/air interface. The second process was observed for all films measured by CECs (process X) and the 36 nm film measured by NSCs (process X2). This process was assigned to fluctuations of constraint PVME segments by PS. Its activation energy was found to be thickness-dependent because of the evidenced thickness dependency of the compositional heterogeneity. Finally, a third process with an activated temperature dependence was observed for all films measured by NSCs (process X1). It resembled the molecular fluctuations in an adsorbed layer found for thin films of pure PVME, and thus, it is assigned accordingly. This process undergoes an extra confinement because of frozen adsorbed PS segments at the polymer/substrate interface. To our knowledge, this is the first example where confinement-induced changes were observed by BDS for blend thin films.

Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)

NASA Astrophysics Data System (ADS)

Boyadjiev, S.; Georgieva, V.; Vergov, L.; Baji, Zs; Gáber, F.; Szilágyi, I. M.

2014-11-01

Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

DOE PAGES

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing; ...

2016-08-27

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode.

PubMed

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-02-24

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films.

Multimodal imaging of ocular surface of dry eye subjects

NASA Astrophysics Data System (ADS)

Zhang, Aizhong; Salahura, Gheorghe; Kottaiyan, Ranjini; Yoon, Geunyoung; Aquavella, James V.; Zavislan, James M.

2016-03-01

To study the relationship between the corneal lipid layer and the ocular surface temperature (OST), we conducted a clinical trial for 20 subjects. Subjects were clinically screened prior to the trial. Of the 20 subjects, 15 have Meibomian gland dysfunction (MGD), and 5 have aqueous-deficient dry eye (ADDE). A custom, circularly polarized illumination video tearscope measured the lipid layer thickness of the ocular tear film. A long-wave infrared video camera recorded the dynamic thermal properties of the ocular team film. The results of these two methods were analyzed and compared. Using principal component analysis (PCA) of the lipid layer distribution, we find that the 20 subjects could be categorized into five statistically significant groups, independent of their original clinical classification: thin (6 subjects), medium (5 subjects), medium and homogenous (3 subjects), thick (4 subjects), and very thick (2 subjects) lipids, respectively. We also conducted PCA of the OST data, and recategorized the subjects into two thermal groups by k-means clustering: one includes all ADDE subjects and some MGD subjects; the other includes the remaining MGD subjects. By comparing these two methods, we find that dry eye subjects with thin (<= 40 nm) lipids have significantly lower OST, and a larger OST drop range, potentially due to more evaporation. However, as long as the lipid layer is not thin (> 40 nm), there is no strong correlation between the lipid layer thickness and heterogeneity and the OST patterns.

Pulsed laser micro-scribing of copper thin films on polyimide substrate in NaCl solution

NASA Astrophysics Data System (ADS)

Shiby, Sooraj; Nammi, Srinagalakshmi; Vasa, Nilesh J.; Krishnan, Sivarama

2018-02-01

Recently, there is an increasing interest to create micro-channels on metal thin films for diverse applications, such as biomedical, micro channel heat exchangers, chemical separation processes and microwave antenna. Nanosecond (ns) Nd3+:YAG laser has been studied for generating micro-channels on Cu thin film (35 μm) deposited on polyimide substrate (50 μm). A pulsed Nd3+:YAG laser (532 nm / 355 nm) based scribing was performed in air and water ambiancePlasma shielding phenomenon is observed to influence the depth of microchannel at higher energies. A novel pump-probe experiment has been conducted for verifying the plasma shielding effect in air. In underwater scribing the recast layer was reduced significantly as compared to that in air. Laser scribing of Cu thin film followed by chemical etching using FeCl3 was studied. However, the approach of chemical etching resulted in undercut and thinning of Cu film. Alternatively, laser material processing in NaCl solution was studied. Cl- ions present in the solution reacts with Cu which is removed from the sample via laser ablation and forms CuCl2. Formation of CuCl2 in turn improved the surface morphology of the channel through localized etching. The surface roughness parameter Ra was less than 400 nm for NaCl solution based scribing which is smaller compared to air and underwater based methods which are typically around 800 nm or above. Preliminary studies using femtosecond (fs) laser based Cu scribing in air with the fluence of 0.5 J/cm2 resulted in a crated depth of 3 μm without any recast layer.

Formation of the YBa2Cu2NbOy Phase in Thin Films (POSTPRINT)

DTIC Science & Technology

2010-03-01

protective layer was deposited on the top of YBCNO film by dc sputtering . A 200 nm 200 nm area film was selected and cut with a Ga ion beam (30 kV...200 TEM at 200 kV. Samples for TEM were prepared using a focused ion beam (FIB (Eindhoven, The Netherlands)) microscope. For TEM examination, a thin Pt...by dc magnetron sputtering deposition of Ag with 93 mm thickness. Transport current measurements were made in liquid nitrogen with the 4-probe method

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001].

PubMed

Murdey, Richard; Sato, Naoki

2011-06-21

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network. © 2011 American Institute of Physics

Properties of dielectric dead layers for SrTiO3 thin films on Pt electrodes

NASA Astrophysics Data System (ADS)

Finstrom, Nicholas H.; Cagnon, Joel; Stemmer, Susanne

2007-02-01

Dielectric measurements as a function of temperature were used to characterize the properties of the dielectric dead layers in parallel-plate capacitors with differently textured SrTiO3 thin films and Pt electrodes. The apparent thickness dependence of the permittivity was described with low-permittivity passive (dead) layers at the interfaces connected in series with the bulk of the SrTiO3 film. Interfacial capacitance densities changed with the film microstructure and were weakly temperature dependent. Estimates of the dielectric dead layer thickness and permittivity were limited by the film surface roughness (˜5nm ). The consequences for the possible origins of dielectric dead layers that have been proposed in the literature are discussed.

Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

NASA Astrophysics Data System (ADS)

Timm, R.; Hjort, M.; Fian, A.; Borg, B. M.; Thelander, C.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

2011-11-01

Vertical InAs nanowires (NWs) wrapped by a thin high-κ dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al2O3 and HfO2 films. The native oxide on the NWs is significantly reduced upon high-κ deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.

Synthesis, structure and magnetic properties ofβ-MnO2nanorods

PubMed Central

Kim, HaeJin; Lee, JinBae; Kim, Young-Min; Jung, Myung-Hwa; Jagličić, Z; Umek, P

2007-01-01

We present synthesis, structure and magnetic properties of structurally well-ordered single-crystalline β-MnO2nanorods of 50–100 nm diameter and several µm length. Thorough structural characterization shows that the basic β-MnO2material is covered by a thin surface layer (∼2.5 nm) of α-Mn2O3phase with a reduced Mn valence that adds its own magnetic signal to the total magnetization of the β-MnO2nanorods. The relatively complicated temperature-dependent magnetism of the nanorods can be explained in terms of a superposition of bulk magnetic properties of spatially segregated β-MnO2and α-Mn2O3constituent phases and the soft ferromagnetism of the thin interface layer between these two phases.

Growth of thin film containing high density ZnO nanorods with low temperature calcinated seed layer

NASA Astrophysics Data System (ADS)

Panda, Rudrashish; Samal, Rudranarayan; Khatua, Lizina; Das, Susanta Kumar

2018-05-01

In this work we demonstrate the growth of thin film containing high density ZnO nanorods by using drop casting of the seed layer calcinated at a low temperature of 132 °C. Chemical bath deposition (CBD) method is used to grow the nanorods. X-ray diffraction (XRD) analysis and Field Emission Scanning Electron Microscopy (FESEM) are performed for the structural and morphological characterizations of the nanorods. The average diameter and length of nanorods are found to be 33 nm and 270 nm respectively. The bandgap of the material is estimated to be 3.2 eV from the UV-Visible absorption spectroscopy. The reported method is much more cost-effective and can be used for growth of ZnO nanorods for various applications.

Numerical study on refractive index sensor based on hybrid-plasmonic mode

NASA Astrophysics Data System (ADS)

Yun, Jeong-Geun; Kim, Joonsoo; Lee, Kyookeun; Lee, Yohan; Lee, Byoungho

2017-04-01

We propose a highly sensitive hybrid-plasmonic sensor based on thin-gold nanoslit arrays. The transmission characteristics of gold nanoslit arrays are analyzed as changing the thickness of gold layer. The surface plasmon polariton mode excited on the sensing medium, which is sensitive to refractive index change of the sensing medium, is strengthened by reducing the thickness of the gold layer. A design rule is suggested that steeper dispersion curve of the surface plasmon polariton mode leads to higher sensitivity. For the dispersion engineering, hybrid-plasmonic structure, which consists of thin-gold nanoslit arrays, sensing region and high refractive index dielectric space is introduced. The proposed sensor structure with period of 700 nm shows the improved sensitivity up to 1080 nm/RIU (refractive index unit), and the surface sensitivity is extremely enhanced.

Ultrathin phase-change coatings on metals for electrothermally tunable colors

NASA Astrophysics Data System (ADS)

Bakan, Gokhan; Ayas, Sencer; Saidzoda, Tohir; Celebi, Kemal; Dana, Aykutlu

2016-08-01

Metal surfaces coated with ultrathin lossy dielectrics enable color generation through strong interferences in the visible spectrum. Using a phase-change thin film as the coating layer offers tuning the generated color by crystallization or re-amorphization. Here, we study the optical response of surfaces consisting of thin (5-40 nm) phase-changing Ge2Sb2Te5 (GST) films on metal, primarily Al, layers. A color scale ranging from yellow to red to blue that is obtained using different thicknesses of as-deposited amorphous GST layers turns dim gray upon annealing-induced crystallization of the GST. Moreover, when a relatively thick (>100 nm) and lossless dielectric film is introduced between the GST and Al layers, optical cavity modes are observed, offering a rich color gamut at the expense of the angle independent optical response. Finally, a color pixel structure is proposed for ultrahigh resolution (pixel size: 5 × 5 μm2), non-volatile displays, where the metal layer acting like a mirror is used as a heater element. The electrothermal simulations of such a pixel structure suggest that crystallization and re-amorphization of the GST layer using electrical pulses are possible for electrothermal color tuning.

Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Wei-Chun; Chen, Hao-Wei

2018-06-01

This work demonstrates pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a 6,13-pentacenequinone (PQ) carrier injection layer between the source/drain (S/D) metal Au electrodes and pentacene channel layer. Compared to devices without a PQ layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off current ratio were significantly improved for the device with a 5-nm-thick PQ interlayer. These improvements are attributed to significant reduction of hole barrier height at the Au/pentacene channel interfaces. Therefore, it is believed that using PQ as the carrier injection layer is a good candidate to improve the pentacene-based OTFTs electrical performance.

Measurement of thin films using very long acoustic wavelengths

NASA Astrophysics Data System (ADS)

Clement, G. T.; Nomura, H.; Adachi, H.; Kamakura, T.

2013-12-01

A procedure for measuring material thickness by means of necessarily long acoustic wavelengths is examined. The approach utilizes a temporal phase lag caused by the impulse time of wave momentum transferred through a thin layer that is much denser than its surrounding medium. In air, it is predicted that solid or liquid layers below approximately 1/2000 of the acoustic wavelength will exhibit a phase shift with an arctangent functional dependence on thickness and layer density. The effect is verified for thin films on the scale of 10 μm using audible frequency sound (7 kHz). Soap films as thin as 100 nm are then measured using 40 kHz air ultrasound. The method's potential for imaging applications is demonstrated by combining the approach with near-field holography, resulting in reconstructions with sub-wavelength resolution in both the depth and lateral directions. Potential implications at very high and very low acoustic frequencies are discussed.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

PubMed Central

Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

2014-01-01

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.

PubMed

Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Ahn, Shihyun; Hussain, Shahzada Qamar; Park, Jinjoo; Jung, Junhee; Lee, Chan; Song, Bong-Shik; Choi, Byoungdeog; Lee, Youn-Jung; Iftiquar, S M; Yi, Junsin

2015-03-01

Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for opto-electronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (Isc) of solar cells. A TCO/Ag/TCO multi-layer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.

Metal/Dielectric Multilayers for High Resolution Imaging

DTIC Science & Technology

2012-08-07

of a silicon waveguide coated by thin metal film. The proposed PWG structure consists of narrow silicon waveguide clad by gold film without top...where the waveguide thickness is 220nm and the lower oxide cladding is 2μm. The device consists of main waveguide (of waveguide width WSOI=450nm...evaporation, where 3nm thick titanium was used as adhesion layer before 40nm gold deposition took place. Finally, the samples were spun coated with

All-optical measurement of interlayer exchange coupling in Fe/Pt/FePt thin films

NASA Astrophysics Data System (ADS)

Berk, C.; Ganss, F.; Jaris, M.; Albrecht, M.; Schmidt, H.

2018-01-01

Time Resolved Magneto Optic Kerr Effect spectroscopy was used to all-optically study the dynamics in exchange coupled Fe(10 nm)/Pt(x = 0-5 nm)/FePt (10 nm) thin films. As the Pt spacer decreases, the effective magnetization of the layers is seen to evolve towards the strong coupling limit where the two films can be described by a single effective magnetization. The coupling begins at x = 1.5 nm and reaches a maximum exchange coupling constant of 2.89 erg/cm2 at x = 0 nm. The films are ferromagnetically coupled at all Pt thicknesses in the exchange coupled regime (x ≤ 1.5 nm). A procedure for extracting the interlayer exchange constant by measuring the magnetic precession frequencies at multiple applied fields and angles is outlined. The dynamics are well reproduced using micromagnetic simulations.

Electron Emission Observations from As-Grown and Vacuum-Coated Chemical Vapor Deposited Diamond

NASA Technical Reports Server (NTRS)

Lamouri, A.; Wang, Yaxin; Mearini, G. T.; Krainsky, I. L.; Dayton, J. A., Jr.; Mueller,W.

1996-01-01

Field emission has been observed from chemical vapor deposited diamond grown on Mo and Si substrates. Emission was observed at fields as low as 20 kV/cm. The samples were tested in the as-grown form, and after coating with thin films of Au, CsI, and Ni. The emission current was typically maximum at the onset of the applied field, but was unstable, and decreased rapidly with time from the as-grown films. Thin Au layers, approximately 15 nm thick, vacuum deposited onto the diamond samples significantly improved the stability of the emission current at values approximately equal to those from uncoated samples at the onset of the applied field. Thin layers of CsI, approximately 5 nm thick, were also observed to improve the stability of the emission current but at values less than those from the uncoated samples at the onset of the applied field. While Au and CsI improved the stability of the emission, Ni was observed to have no effect.

Superconducting YBa2Cu3O7- δ Thin Film Detectors for Picosecond THz Pulses

NASA Astrophysics Data System (ADS)

Probst, P.; Scheuring, A.; Hofherr, M.; Wünsch, S.; Il'in, K.; Semenov, A.; Hübers, H.-W.; Judin, V.; Müller, A.-S.; Hänisch, J.; Holzapfel, B.; Siegel, M.

2012-06-01

Ultra-fast THz detectors from superconducting YBa2Cu3O7- δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

Interfacial and topological effects on the glass transition in free-standing polystyrene films

NASA Astrophysics Data System (ADS)

Lyulin, Alexey V.; Balabaev, Nikolay K.; Baljon, Arlette R. C.; Mendoza, Gerardo; Frank, Curtis W.; Yoon, Do Y.

2017-05-01

United-atom molecular-dynamics computer simulations of atactic polystyrene (PS) were performed for the bulk and free-standing films of 2 nm-20 nm thickness, for both linear and cyclic polymers comprised of 80 monomers. Simulated volumetric glass-transition temperatures (Tg) show a strong dependence on the film thickness below 10 nm. The glass-transition temperature of linear PS is 13% lower than that of the bulk for 2.5 nm-thick films, as compared to less than 1% lower for 20 nm films. Our studies reveal that the fraction of the chain-end groups is larger in the interfacial layer with its outermost region approximately 1 nm below the surface than it is in the bulk. The enhanced population of the end groups is expected to result in a more mobile interfacial layer and the consequent dependence of Tg on the film thickness. In addition, the simulations show an enrichment of backbone aliphatic carbons and concomitant deficit of phenyl aromatic carbons in the interfacial film layer. This deficit would weaken the strong phenyl-phenyl aromatic (π -π ) interactions and, hence, lead to a lower film-averaged Tg in thin films, as compared to the bulk sample. To investigate the relative importance of the two possible mechanisms (increased chain ends at the surface or weakened π -π interactions in the interfacial region), the data for linear PS are compared with those for cyclic PS. For the cyclic PS, the reduction of the glass-transition temperature is also significant in thin films, albeit not as much as for linear PS. Moreover, the deficit of phenyl carbons in the film interface is comparable to that observed for linear PS. Therefore, chain-end effects alone cannot explain the observed pronounced Tg dependence on the thickness of thin PS films; the weakened phenyl-phenyl interactions in the interfacial region seems to be an important cause as well.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

NASA Astrophysics Data System (ADS)

Zuo, Biao; Xu, Jianquan; Sun, Shuzheng; Liu, Yue; Yang, Juping; Zhang, Li; Wang, Xinping

2016-06-01

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films, with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.

Stepwise crystallization and the layered distribution in crystallization kinetics of ultra-thin poly(ethylene terephthalate) film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuo, Biao, E-mail: chemizuo@zstu.edu.cn, E-mail: wxinping@yahoo.com; Xu, Jianquan; Sun, Shuzheng

2016-06-21

Crystallization is an important property of polymeric materials. In conventional viewpoint, the transformation of disordered chains into crystals is usually a spatially homogeneous process (i.e., it occurs simultaneously throughout the sample), that is, the crystallization rate at each local position within the sample is almost the same. Here, we show that crystallization of ultra-thin poly(ethylene terephthalate) (PET) films can occur in the heterogeneous way, exhibiting a stepwise crystallization process. We found that the layered distribution of glass transition dynamics of thin film modifies the corresponding crystallization behavior, giving rise to the layered distribution of the crystallization kinetics of PET films,more » with an 11-nm-thick surface layer having faster crystallization rate and the underlying layer showing bulk-like behavior. The layered distribution in crystallization kinetics results in a particular stepwise crystallization behavior during heating the sample, with the two cold-crystallization temperatures separated by up to 20 K. Meanwhile, interfacial interaction is crucial for the occurrence of the heterogeneous crystallization, as the thin film crystallizes simultaneously if the interfacial interaction is relatively strong. We anticipate that this mechanism of stepwise crystallization of thin polymeric films will allow new insight into the chain organization in confined environments and permit independent manipulation of localized properties of nanomaterials.« less

GaN membrane MSM ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Microstructure-related properties at 193 nm of MgF2 and GdF3 films deposited by a resistive-heating boat.

PubMed

Liu, Ming-Chung; Lee, Cheng-Chung; Kaneko, Masaaki; Nakahira, Kazuhide; Takano, Yuuichi

2006-03-01

MgF2 and GdF3 materials, used for a single-layer coating at 193 nm, are deposited by a resistive-heating boat at specific substrate temperatures. Optical characteristics (transmittance, refractive index, extinction coefficient, and optical loss) and microstructures (morphology and crystalline structure) are investigated and discussed. Furthermore, MgF2 is used as a low-index material, and GdF3 is used as a high-index material for multilayer coatings. Reflectance, stress, and the laser-induced damage threshold (LIDT) are studied. It is shown that MgF2 and GdF3 thin films, deposited on the substrate at a temperature of 300 degrees C, obtain good quality thin films with high transmittance and little optical loss at 193 nm. For multilayer coatings, the stress mainly comes from MgF2, and the absorption comes from GdF3. Among those coatings, the sixteen-layer design, sub/(1.4L 0.6H)8/air, shows the largest LIDT.

High aspect ratio nano-fabrication of photonic crystal structures on glass wafers using chrome as hard mask.

PubMed

Hossain, Md Nazmul; Justice, John; Lovera, Pierre; McCarthy, Brendan; O'Riordan, Alan; Corbett, Brian

2014-09-05

Wafer-scale nano-fabrication of silicon nitride (Si x N y ) photonic crystal (PhC) structures on glass (quartz) substrates is demonstrated using a thin (30 nm) chromium (Cr) layer as the hard mask for transferring the electron beam lithography (EBL) defined resist patterns. The use of the thin Cr layer not only solves the charging effect during the EBL on the insulating substrate, but also facilitates high aspect ratio PhCs by acting as a hard mask while deep etching into the Si x N y . A very high aspect ratio of 10:1 on a 60 nm wide grating structure has been achieved while preserving the quality of the flat top of the narrow lines. The presented nano-fabrication method provides PhC structures necessary for a high quality optical response. Finally, we fabricated a refractive index based PhC sensor which shows a sensitivity of 185 nm per RIU.

The effects of energy transfer on the Er3+ 1.54 μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants

NASA Astrophysics Data System (ADS)

Hoang, J.; Schwartz, Robert N.; Wang, Kang L.; Chang, J. P.

2012-09-01

We report the effects of heterogeneous Yb3+ and Er3+ codoping in Y2O3 thin films on the 1535 nm luminescence. Yb3+:Er3+:Y2O3 thin films were deposited using sequential radical enhanced atomic layer deposition. The Yb3+ energy transfer was investigated for indirect and direct excitation of the Yb 2F7/2 state using 488 nm and 976 nm sources, respectively, and the trends were described in terms of Forster and Dexter's resonant energy transfer theory and a macroscopic rate equation formalism. The addition of 11 at. % Yb resulted in an increase in the effective Er3+ photoluminescence (PL) yield at 1535 nm by a factor of 14 and 42 under 488 nm and 976 nm excitations, respectively. As the Er2O3 local thickness was increased to greater than 1.1 Å, PL quenching occurred due to strong local Er3+ ↔ Er3+ excitation migration leading to impurity quenching centers. In contrast, an increase in the local Yb2O3 thickness generally resulted in an increase in the effective Er3+ PL yield, except when the Er2O3 and Yb2O3 layers were separated by more than 2.3 Å or were adjacent, where weak Yb3+ ↔ Er3+ coupling or strong Yb3+ ↔ Yb3+ interlayer migration occurred, respectively. Finally, it is suggested that enhanced luminescence at steady state was observed under 488 nm excitation as a result of Er3+ → Yb3+ energy back transfer coupled with strong Yb3+ ↔ Yb3+ energy migration.

Application of Localized Surface Plasmons for the Enhancement of Thin-Film Amorphous Silicon Solar Cells

NASA Astrophysics Data System (ADS)

Hungerford, Chanse D.

Photovoltaics (PV) is a rapidly growing electricity source and new PV technologies are continually being developed. Increasing the efficiency of PV will continue to drive down the costs of solar installations. One area of research that is necessary for increasing PV performance is light management. This is especially true for thin-film devices that are unable to maximize absorption of the solar spectrum in a single pass. Methods for light trapping include texturing, high index nanostructures, nanophotonic structures, and plasmonics. This research focus on the use of plasmonic structures, in this case metallic nanoparticles, to increase the power conversion efficiency of solar cells. Three different designs are investigated. First was an a-Si:H solar cell, approximately 300nm thick, with a rear reflector consisting of metallic nanoparticles and a mirror. This structure is referred to as a plasmonic back reflector. Simulations indicate that a maximum absorption increase of 7.2% in the 500nm to 800nm wavelength range is possible versus a flat reference. Experiments did not show enhancement, likely due to absorption in the transparent conducting oxide and the parasitic absorption in the small metallic nanoparticles. The second design was an a-Si:H solar cell with embedded metal nanoparticles. Experimental devices were successfully fabricated by breaking the i-layer deposition into two steps and introducing colloidal nanoparticles between the two depositions. These devices performed worse than the controls, but the results provide proof that fabrication of such a device is possible and may be improved in the future. Suggestions for improvements are discussed. The final device investigated was an ultra-thin, undoped solar cell. The device used an absorber layer < 100nm thick, with the thinnest device using an i-layer of only approximately 15nm. Loses due to the doped layers in the standard p-i-n structure can be reduced by replacing the doped layers with MoO 3 and LiF. While the efficiency and open circuit voltage of the test devices was lower than the controls, the short circuit current was increased by 27.3%. Incorporation of nanoparticles into the device caused shorting between the layers, resulting in non-functional solar cells. This is likely due to fabrication issues that can be solved and suggestions are discussed.

Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Tekgül, Atakan; Alper, Mürsel; Kockar, Hakan

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current-time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of -0.3 and -1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices.

Morphology and inhibition performance of Ag thin film as antimicrobial coating deposited by RF-PVD on 316 L stainless steel

NASA Astrophysics Data System (ADS)

Purniawan, A.; Khrisna, Y. S. A.; Rasyida, A.; Atmono, T. M.

2018-04-01

Foreign body related infection (FBRIs) is caused by forming biofilm of bacterial colony of medical equipment surfaces. In many cases, the FBRIs is still happened on the surface after medical sterilization process has been performed. In order to avoid the case, surface modification by antimicrobial coating was used. In this work, we present silver (Ag) thin film on 316 L stainless steel substrate surface was deposited using Radio Frequency Sputtering PVD (RF-PVD). The morphology of Ag thin film were characterized using SEM-EDX. Surface roughness of the thin film was measured by AFM. In addition, Kirby Bauer Test in Escherichia coli (E. coli) was conducted in order to evaluate the inhibition performance of the Ag thin film antimicrobial coating. Based on SEM and AFM results show that the particle size is increased from 523 nm to 708 nm and surface roughness from 9 to 20 nm for deposition time 10 minutes to 20 minutes, respectively. In addition, the inhibition layer of the coating is about 29 mm.

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor ofmore » 0.26.« less

The dynamics of femtosecond pulsed laser removal of 20 nm Ni films from an interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schrider, Keegan J.; Yalisove, Steven M.; Torralva, Ben

2015-09-21

The dynamics of femtosecond laser removal of 20 nm Ni films on glass substrates was studied using time-resolved pump-probe microscopy. 20 nm thin films exhibit removal at two distinct threshold fluences, removal of the top 7 nm of Ni above 0.14 J/cm{sup 2}, and removal of the entire 20 nm film above 0.36 J/cm{sup 2}. Previous work shows the top 7 nm is removed through liquid spallation, after irradiation the Ni melts and rapidly expands leading to tensile stress and cavitation within the Ni film. This work shows that above 0.36 J/cm{sup 2} the 20 nm film is removed in two distinct layers, 7 nm and 13 nm thick. The topmore » 7 nm layer reaches a speed 500% faster than the bottom 13 nm layer at the same absorbed fluence, 500–2000 m/s and 300–700 m/s in the fluence ranges studied. Significantly different velocities for the top 7 nm layer and bottom 13 nm layer indicate removal from an interface occurs by a different physical mechanism. The method of measuring film displacement from the development of Newton's rings was refined so it could be shown that the 13 nm layer separates from the substrate within 70 ps and accelerates to its final velocity within several hundred picoseconds. We propose that removal of the bottom 13 nm is consistent with heterogeneous nucleation and growth of vapor at the Ni-glass interface, but that the rapid separation and acceleration of the 13 nm layer from the Ni-glass interface requires consideration of exotic phases of Ni after excitation.« less

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

PubMed

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

PubMed Central

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Study of Sb2S3 thin films deposited by SILAR method

NASA Astrophysics Data System (ADS)

Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

2018-05-01

In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

What makes a feather shine? A nanostructural basis for glossy black colours in feathers.

PubMed

Maia, Rafael; D'Alba, Liliana; Shawkey, Matthew D

2011-07-07

Colours in feathers are produced by pigments or by nanostructurally organized tissues that interact with light. One of the simplest nanostructures is a single layer of keratin overlying a linearly organized layer of melanosomes that create iridescent colours of feather barbules through thin-film interference. Recently, it has been hypothesized that glossy (i.e. high specular reflectance) black feathers may be evolutionarily intermediate between matte black and iridescent feathers, and thus have a smooth keratin layer that produces gloss, but not the layered organization of melanosomes needed for iridescence. However, the morphological bases of glossiness remain unknown. Here, we use a theoretical approach to generate predictions about morphological differences between matte and glossy feathers that we then empirically test. Thin-film models predicted that glossy spectra would result from a keratin layer 110-180 nm thick and a melanin layer greater than 115 nm thick. Transmission electron microscopy data show that nanostructure of glossy barbules falls well within that range, but that of matte barbules does not. Further, glossy barbules had a thinner and more regular keratin cortex, as well as a more continuous underlying melanin layer, than matte barbules. Thus, their quasi-ordered nanostructures are morphologically intermediate between matte black and iridescent feathers, and perceived gloss may be a form of weakly chromatic iridescence.

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

PubMed

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

PubMed Central

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

2018-01-01

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

Mirrors for High Resolution X-Ray Optics---Figure Preserving IR/PT Coating

NASA Technical Reports Server (NTRS)

Chan, Kai-Wing; Olsen, Lawrence; Sharpe, Marton; Numata, Ai; McClelland, Ryan; Saha, Timo; Zhang, Will

2016-01-01

Coating stress of 10 - 20 nm of Ir is sufficiently high to distort the figure of arc-second thin lightweight mirrors. For iridium: --Stress sigma 4 GPa for 15 nm film implies 60 Nm integrated stress-- Need less than 3 N/m (or stress less than 200 MPa) for sub-arcsecond optics. Basic Approaches for Mitigation. A. Annealing the film-- Glass can be heat up to 400 C without distortion. Silicon is even more resistant.-- It was found that recovery is limited by residual thermal stress from taking the mirror down from high T. B. Coating bi-layer films with compressive stress with tensile stress. C. Front-and-back coating with magnetron sputtering or atomic layer deposition-- Sputtering involve spanning of substrates. Geometric difference in setup (convexness/concaveness of curved mirrors) does not permit precise front-and-back matching-- Atomic layer deposition can provide a uniform deposition front and back simultaneously.

Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.

PubMed

Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan

2013-06-01

We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).

Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

NASA Astrophysics Data System (ADS)

Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

2018-05-01

Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.

PubMed

Xia, Fengnian; Wang, Han; Jia, Yichen

2014-07-21

Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600 cm(2)V(-1)s(-1) for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 μm. Field-effect transistors using 5 nm BP along x direction exhibit an on-off current ratio exceeding 10(5), a field-effect mobility of 205 cm(2)V(-1)s(-1), and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.

Automated thin-film analyses of hydrated interplanetary dust particles in the analytical electron microscope

NASA Technical Reports Server (NTRS)

Germani, M. S.; Bradley, J. P.; Brownlee, D. E.

1990-01-01

A 200 keV electron microscope was used to obtain elemental analyses from over 4000 points on thin sections of eight 'layer silicate' class interplanetary dust particles (IDPs). Major and minor element abundances from a volume approaching that of a cylinder 50 nm in diameter were observed. Mineral phases and their relative abundances in the thin sections were identified and petrographic characteristics were determined. Three of the particles contained smectite (1.0-1.2 nm basal spacing) and two contained serpentine (0.7 nm basal spacing). The point count analyses and Mg-Si-Fe ternary diagrams show that one of the serpentine-containing IDPs is similar to CI and CM chondritic meteorites. The IDPs exhibit evidence of aqueous processing, but they have typically experienced only short range, submicrometer scale alteration. The IDPs may provide a broad sampling of the asteroid belt.

Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2018-03-01

The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

Laser treatment of plasma-hydrogenated silicon wafers for thin layer exfoliation

NASA Astrophysics Data System (ADS)

Ghica, Corneliu; Nistor, Leona Cristina; Teodorescu, Valentin Serban; Maraloiu, Adrian; Vizireanu, Sorin; Scarisoreanu, Nae Doinel; Dinescu, Maria

2011-03-01

We have studied by transmission electron microscopy the microstructural effects induced by pulsed laser annealing in comparison with thermal treatments of RF plasma hydrogenated Si wafers aiming for further application in the smart-cut procedure. While thermal annealing mainly produces a slight decrease of the density of plasma-induced planar defects and an increase of the size and number of plasma-induced nanocavities in the Si matrix, pulsed laser annealing of RF plasma hydrogenated Si wafers with a 355 nm wavelength radiation results in both the healing of defects adjacent to the wafer surface and the formation of a well defined layer of nanometric cavities at a depth of 25-50 nm. In this way, a controlled fracture of single crystal layers of Si thinner than 50 nm is favored.

Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rusnan, Fara Naila; Mohamad, Khairul Anuar; Seria, Dzul Fahmi Mohd Husin

3,16-bis triisopropylsilylethynyl (Pentacene) (TIPS-Pentacene) compactable interface property is important in order to have a good arrangement of molecular structure. Comparison for TIPS-Pentacene deposited between two different surface layers conducted. 0.1wt% TIPS-Pentacene diluted in chloroform were deposited onto poly(methylmeaclyrate) (PMMA) layered transparent substrates using slide coating method. X-ray diffraction (XRD) used to determine crystallinity of thin films. Series of (00l) diffraction peaks obtained with sharp first peaks (001) for TIPS-Pentacene deposited onto PMMA layer at 5.35° and separation of 16.3 Å. Morphology and surface roughness were carried out using scanning electron microscope (SEM) and surface profilemeter LS500, respectively.TIPS-Pentacene deposited onto PMMAmore » layer formed needled-like-shape grains with 10.26 nm surface roughness. These properties were related as thin film formed and its surface roughness plays important role towards good mobility devices.« less

Structural properties of buried conducting layers formed by very low energy ion implantation of gold into polymer

NASA Astrophysics Data System (ADS)

Teixeira, F. S.; Salvadori, M. C.; Cattani, M.; Brown, I. G.

2009-09-01

We have investigated the fundamental structural properties of conducting thin films formed by implanting gold ions into polymethylmethacrylate (PMMA) polymer at 49 eV using a repetitively pulsed cathodic arc plasma gun. Transmission electron microscopy images of these composites show that the implanted ions form gold clusters of diameter ˜2-12 nm distributed throughout a shallow, buried layer of average thickness 7 nm, and small angle x-ray scattering (SAXS) reveals the structural properties of the PMMA-gold buried layer. The SAXS data have been interpreted using a theoretical model that accounts for peculiarities of disordered systems.

Exchange coupling in the complex magnetic multilayers

NASA Astrophysics Data System (ADS)

Uzdin, V. M.; Adamowicz, L.; Kocinski, P.

1996-06-01

Exchange coupling in the complex magnetic sandwich structures containing nonmagnetic (NM) and ferromagnetic (FM) layers composed of two different ferromagnetic metals has been studied within the framework of the quantum wells model. The strength of the exchange coupling in the multilayer structure with thin layers of a second ferromagnetic material inserted at the interface of FM/NM/FM sandwich was calculated at various physical situations. In one case the exponential dependence of the exchange coupling on the thickness of the interface ferromagnetic layer has been obtained in striking resemblance to the Parkin experimental results for magnetoresistance (S. S. P. Parkin, Phys. Rev. Lett., 71 (1993) 1641).

Cross Section High Resolution Imaging of Polymer-Based Materials

NASA Astrophysics Data System (ADS)

Delaportas, D.; Aden, P.; Muckle, C.; Yeates, S.; Treutlein, R.; Haq, S.; Alexandrou, I.

This paper describes a methodology for preparing cross sections of organic layers suitable for transmission electron microscopy (TEM) at high resolution. Our principal aim is to prepare samples that are tough enough to allow the slicing into sub-150 nm sections. We also need strong contrast at the organic layer area to make it identifiable during TEM. Our approach is to deposit organic layers on flexible substrates and prepare thin cross sections using ultra-microtomy. We sandwich the organic layer between two metal thin films in order to isolate it and improve contrast. Our methodology is used to study the microstructure of polymer/nanotube composites, allowing us to accurately measure the organic layer thickness, determine nanotube dispersion and assess the effect of nanotube clustering on film structural stability.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

All-Aluminum Thin Film Transistor Fabrication at Room Temperature

PubMed Central

Yao, Rihui; Zheng, Zeke; Zeng, Yong; Liu, Xianzhe; Ning, Honglong; Hu, Shiben; Tao, Ruiqiang; Chen, Jianqiu; Cai, Wei; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao

2017-01-01

Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd) and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials. PMID:28772579

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

PubMed

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

Subsurface optical stimulation of the rat prostate nerves using continuous-wave near-infrared laser radiation

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2012-02-01

Successful identification and preservation of the cavernous nerves (CN), which are responsible for sexual function, during prostate cancer surgery, will require subsurface detection of the CN beneath a thin fascia layer. This study explores optical nerve stimulation (ONS) in the rat with a fascia layer placed over the CN. Two near-IR diode lasers (1455 nm and 1550 nm lasers) were used to stimulate the CN in CW mode with a 1-mm-diameter spot in 8 rats. The 1455 nm wavelength provides an optical penetration depth (OPD) of ~350 μm, while 1550 nm provides an OPD of ~1000 μm (~3 times deeper than 1455 nm and 1870 nm wavelengths previously tested). Fascia layers with thicknesses of 85 - 600 μm were placed over the CN. Successful ONS was confirmed by an intracavernous pressure (ICP) response in the rat penis at 1455 nm through fascia 110 μm thick and at 1550 nm through fascia 450 μm thick. Higher incident laser power was necessary and weaker and slower ICP responses were observed as fascia thickness was increased. Subsurface ONS of the rat CN at a depth of 450 μm using a 1550 nm laser is feasible.

Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag

2017-03-01

Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm-1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2- valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400 nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Ω·cm as the film thickness increased.

The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

PubMed

Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

2014-11-01

Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

The effects of ultra-thin cerium fluoride film as the anode buffer layer on the electrical characteristics of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Lu, Hsin-Wei; Tsai, Cheng-Che; Hong, Cheng-Shong; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

2016-11-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3film as an ultra-thin buffer layer between the indium tin oxide (ITO) electrode and α-naphthylphenylbiphenyldiamine (NPB) hole transport layer, with the structure configuration ITO/CeF3 (0.5, 1, and 1.5 nm)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/lithium fluoride (LiF) (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone treated CeF3 film. The work function increased from 4.8 eV (standard ITO electrode) to 5.22 eV (0.5-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The surface roughness of the UV-ozone treated CeF3 film was smoother than that of the standard ITO electrode. Further, the UV-ozone treated CeF3 film increased both the surface energy and polarity, as determined from contact angle measurements. In addition, admittance spectroscopy measurements showed an increased capacitance and conductance of the OLEDs. Accordingly, the turn-on voltage decreased from 4.2 V to 3.6 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 24760 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.8 cd/A when the 0.5-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Epitaxial Growth of Rhenium with Sputtering

DTIC Science & Technology

2016-05-06

corresponds to two atomic Re layers , considering that the c-axis lattice constant of the tri- atomic layered hcp Re unit cell is ~4.5 Å. Frequently, two...Å) corresponds to two Re atomic layers since the c-axis lattice constant of hcp Re, which is composed of three Re atomic layers , is ~4.5 Å...The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin (~2 nm) seed layer

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Graphene enhanced surface plasmon resonance sensing based on Goos-Hänchen shift

NASA Astrophysics Data System (ADS)

Chen, Huifang; Tong, Jinguang; Wang, Yiqin; Jiang, Li

2018-03-01

A graphene/Ag structure is engineered as an enhanced platform for surface plasmon resonance sensing due to the high impermeability nature of graphene and the superior surface plasmon resonance performance of Ag. This structure is ultrasensitive to even tiny refractive index change of analytes based on Goos-Hänchen shift measurement compared to the traditional SPR sensor with bare Au film. The graphene/Ag configuration is consisted of five components, including BK7 glass slide, titanium thin film, silver thin film, two-dimensional graphene layers and biomolecular analyte layer. We have optimized the parameters of each layer and theoretically analyzed Goos-Hänchen shift of the plasmonic structure under surface plasmon resonance effect. The optimized graphene/Ag structure is monolayer graphene coated on Ag thin film with the thickness of 42 nm.

Decorative power generating panels creating angle insensitive transmissive colors

PubMed Central

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-01-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ±70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications. PMID:24577075

Decorative power generating panels creating angle insensitive transmissive colors

NASA Astrophysics Data System (ADS)

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-02-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to +/-70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Decorative power generating panels creating angle insensitive transmissive colors.

PubMed

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L Jay

2014-02-28

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ± 70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Confinement induced densification in supported unentangled polymer films

NASA Astrophysics Data System (ADS)

Pradipkanti, L.; Satapathy, Dillip K.

2017-05-01

We report the densification phenomena inunentangled and low-molecular weight polystyrene (PS) thin films supported on solid substrates having thickness from 25 nm to 230 nm. The mass density of the thin polymer films were extracted from X-ray reflectivity profiles and also from the refractive index by using Clausius and Mossotti equation. The mass densityof polymeris found to increasesignificantly with decrease in film thickness below ten times the radius of gyration of the polymer. The net increase in mass density of the polymer film upon reduction in thickness is discussed in terms of three-layer model and the presence of unentangled polymer chains. We conjecture that, the densification of ultra-thin polymer films can strongly alter the polymer conformations at film/substrate interface.

Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

PubMed

Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

2011-03-01

Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

PubMed Central

Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

2017-01-01

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films. PMID:28772586

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells.

PubMed

Dalapati, Goutam Kumar; Zhuk, Siarhei; Masudy-Panah, Saeid; Kushwaha, Ajay; Seng, Hwee Leng; Chellappan, Vijila; Suresh, Vignesh; Su, Zhenghua; Batabyal, Sudip Kumar; Tan, Cheng Cheh; Guchhait, Asim; Wong, Lydia Helena; Wong, Terence Kin Shun; Tripathy, Sudhiranjan

2017-05-02

We have investigated the impact of Cu 2 ZnSnS 4 -Molybdenum (Mo) interface quality on the performance of sputter-grown Cu 2 ZnSnS 4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoS x ) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoS x layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoS x layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.

Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.

2016-03-07

We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) atmore » room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.« less

Controlling the optical parameters of self-assembled silver films with wetting layers and annealing

NASA Astrophysics Data System (ADS)

Ciesielski, Arkadiusz; Skowronski, Lukasz; Trzcinski, Marek; Szoplik, Tomasz

2017-11-01

We investigated the influence of presence of Ni and Ge wetting layers as well as annealing on the permittivity of Ag films with thicknesses of 20, 35 and 65 nm. Most of the research on thin silver films deals with very small (<20 nm) or relatively large (≥50 nm) thicknesses. We studied the transition region (around 30 nm) from charge percolation pathways to fully continuous films and compared the values of optical parameters among silver layers with at least one fixed attribute (thickness, wetting and capping material, post-process annealing). Our study, based on atomic force microscopy, ellipsometric and X-ray photoelectron spectroscopy measurements, shows that utilizing a wetting layer is comparable to increasing the thickness of the silver film. Both operations decrease the roughness-to-thickness ratio, thus decreasing the scattering losses and both narrow the Lorentz-shaped interband transition peak. However, while increasing silver thickness increases absorption on the free carriers, the use of wetting layers influences the self-assembled internal structure of silver films in such a way, that the free carrier absorption decreases. Wetting layers also introduce additional contributions from effects like segregation or diffusion, which evolve in time and due to annealing.

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

NASA Astrophysics Data System (ADS)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Structure and optical properties of ZnO with silver nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyadov, N. M., E-mail: nik061287@mail.ru; Gumarov, A. I.; Kashapov, R. N.

Textured nanocrystalline ZnO thin films are synthesized by ion beam assisted deposition. According to X-ray diffraction data, the crystallite size is ∼25 nm. Thin (∼15 nm) ZnO layers containing Ag nanoparticles are formed in a thin surface region of the films by the implantation of Ag ions with an energy of 30 keV and a dose in the range (0.25–1) × 10{sup 17} ion/cm{sup 2}. The structure and optical properties of the layers are studied. Histograms of the size distribution of Ag nanoparticles are obtained. The average size of the Ag nanoparticles varies from 0.5 to 1.5–2 nm depending onmore » the Ag-ion implantation dose. The optical transmittance of the samples in the visible and ultraviolet regions increases, as the implantation dose is increased. The spectra of the absorption coefficient of the implanted films are calculated in the context of the (absorbing film)/(transparent substrate) model. It is found that the main changes in the optical-density spectra occur in the region of ∼380 nm, in which the major contribution to absorption is made by Ag nanoparticles smaller than 0.75 nm in diameter. In this spectral region, absorption gradually decreases, as the Ag-ion irradiation dose is increased. This is attributed to an increase in the average size of the Ag nanoparticles. It is established that the broad surface-plasmon-resonance absorption bands typical of nanocomposite ZnO films with Ag nanoparticles synthesized by ion implantation are defined by the fact that the size of the nanoparticles formed does not exceed 1.5–2 nm.« less

Carbon nanotube synthesis via the catalytic chemical vapor deposition of methane in the presence of iron, molybdenum, and iron-molybdenum alloy thin layer catalysts

NASA Astrophysics Data System (ADS)

Yahyazadeh, Arash; Khoshandam, Behnam

In this study, we documented the catalytic chemical vapor deposition synthesis of carbon nanotubes (CNTs) using ferrocene and molybdenum hexacarbonyl as catalyst nanoparticle precursors and methane as a nontoxic and economical carbon source for the first time. Field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, wavelength dispersive X-ray spectrometry and transmission electron microscopy of the thin layer catalyst as a simple and cost effective catalyst preparation after methane decomposition reaction, along with Fourier transform infrared spectroscopy and Raman spectroscopy confirmed the growth of CNTs, from bimetallic nanoparticles, which are converted into iron-molybdenum alloy nanoparticles at 700 °C for pretreatment by hydrogen after chemical vapor deposition of thin layers. An investigation of the weight percentages of the chemical elements present in the CNTs synthesized from iron-molybdenum catalyst using quartz sheet substrate at 750 °C, confirmed a significant carbon yield of 75.4% which represents high catalyst activity. Additionally, multi-walled carbon nanotubes (∼16-55 nm in diameter and 1.2 μm in length) were observed in the iron-molybdenum alloy sample after methane decomposition reaction at 750 °C for 35 min. To show the role of iron and molybdenum coated on silicon substrate as two thin layer catalysts, samples were considered for CNTs growth (diameter ∼47-69 nm) at 800 °C and 830 °C, respectively. Moreover, the effect of hydrogen pretreatment was evaluated in terms of active metal coating properly. The best graphitic structure due to Raman spectroscopy outcomes (ID/IG ratio) was obtained for iron coated on a quartz sheet, which was estimated at 0.8505. Thermogravimetric analysis proved the thermal stability of the synthesized CNTs using iron thin-layer catalyst up to 350 °C.

Sensitivity control of optical fiber biosensors utilizing turnaround point long period gratings with self-assembled polymer coatings

NASA Astrophysics Data System (ADS)

Gifford, Erika; Wang, Z.; Ramachandran, S.; Heflin, J. R.

2007-09-01

Ionic self-assembled multilayers (ISAMs) adsorbed on long period fiber gratings (LPGs) can serve as an inexpensive, robust, portable, biosensor platform. The ISAM technique is a layer-by-layer deposition technique that creates thin films on the nanoscale level. The combination of ISAMs with LPGs yields exceptional sensitivity of the optical fiber transmission spectrum. We have shown theoretically that the resonant wavelength shift for a thin-film coated LPG can be caused by the variation of the film's refractive index and/or the variation of the thickness of the film. We have experimentally demonstrated that the deposition of nm-thick ISAM films on LPGs induces shifts in the resonant wavelength of > 1.6 nm per nm of thin film. It has also been shown that the sensitivity of the LPG to the thickness of the ISAM film increases with increased film thickness. We have further demonstrated that ISAM-coated LPGs can function effectively as biosensors by using the biotin-streptavidin system and by using the Bacillus anthracis (Anthrax) antibody- PA (Protective Antigen) system. Experiments have been successfully performed in both air and solution, which illustrates the versatility of the biosensor. The results confirm that ISAM-LPGs yield a reusable, thermally-stable, and robust platform for designing and building efficient optical biosensors.

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

NASA Astrophysics Data System (ADS)

Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

2009-11-01

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

NASA Astrophysics Data System (ADS)

Qiu, Fei; Xu, Zhimou

2009-08-01

In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Polymer-coated compliant receivers for intact laser-induced forward transfer of thin films: experimental results and modelling

NASA Astrophysics Data System (ADS)

Feinaeugle, Matthias; Horak, Peter; Sones, Collin L.; Lippert, Thomas; Eason, Rob W.

2014-09-01

In this study, we investigate both experimentally and numerically laser-induced forward transfer (LIFT) of thin films to determine the role of a thin polymer layer coating the receiver with the aim of modifying the rate of deceleration and reduction of material stress preventing intact material transfer. A numerical model of the impact phase during LIFT shows that such a layer reduces the modelled stress. The evolution of stress within the transferred deposit and the substrate as a function of the thickness of the polymer layer, the transfer velocity and the elastic properties of the polymer are evaluated. The functionality of the polymer layer is verified experimentally by LIFT printing intact 1- m-thick bismuth telluride films and polymeric light-emitting diode pads onto a layer of 12-m-thick polydimethylsiloxane and 50-nm-thick poly(3,4-ethylenedioxythiophene) blended with poly(styrenesulfonate) (PEDOT:PSS), respectively. Furthermore, it is demonstrated experimentally that the introduction of such a compliant layer improves adhesion between the deposit and its substrate.

Sharp focusing of laser light by multilayer cylinders with circular cross-section

NASA Astrophysics Data System (ADS)

Kozlova, E. S.

2018-04-01

In this paper, the focusing of laser light at 532 nm by dielectric cylinders with a metal shells is studied by using COMSOL Multiphysics. The analysis of cylinder design which proposed multilayered shell shows that a microcylinder with a gold-silver (or silver-gold) shell can improve the focusing process, especially in the case of TM polarization. The microcylinder with thin internal silver layer of 1 nm and outside gold layer of 9 nm focus TE-polarized light to nanojet with maximal intensity of 5.65 a.u., full width and full length at half maximum of intensity of of 0.39λ and 0.72λ, respectively.

Effect of buffer layer on photoresponse of MoS2 phototransistor

NASA Astrophysics Data System (ADS)

Miyamoto, Yuga; Yoshikawa, Daiki; Takei, Kuniharu; Arie, Takayuki; Akita, Seiji

2018-06-01

An atomically thin MoS2 field-effect transistor (FET) is expected as an ultrathin photosensor with high sensitivity. However, a persistent photoconductivity phenomenon prevents high-speed photoresponse. Here, we investigate the photoresponse of a MoS2 FET with a thin Al2O3 buffer layer on a SiO2 gate insulator. The application of a 2-nm-thick Al2O3 buffer layer greatly improves not only the steady state properties but also the response speed from 1700 to 0.2 s. These experimental results are well explained by the random localized potential fluctuation model combined with the model based on the recombination of the bounded electrons around the trapped hole.

[Separation and purification of an endogenous inhibitor of sodium pump from chansu by thin-layer chromatography and reversed-phase high performance liquid chromatography].

PubMed

Li, S Q

2001-11-01

An endogenous inhibitor of the sodium pump from the Chinese medication Chansu was purified. The dry substance Chansu was extracted with methanol. The dry residue dissolved in water and filtered subsequently through membrane filters with the exclusion size of 1000 Da, 3000 Da and 10000 Da in a Filtron Pro Vario-3-System and applied to thin-layer chromatographic plate made of Silica gel 60 F254 + 366 developed with a mixture of CHCl3-MeOH-H2O(75:20:5, volume ratio). The fractions with Rf 0.55 inhibiting the sodium pump were purified on an HPLC C18-RP column using a linear H2O-methanol gradient with 220 nm and 300 nm DAD detection. The bioactivity was measured by 86Rb-uptake into human red blood cells. The results showed that a low molecular weight, water soluble compound, which inhibited the sodium pump activity in the red blood cells and had a maximum absorbance at 250 nm was isolated from the Chinese medication Chansu. Several mg of the compound in pure state could be obtained from 1 kg Chansu. It was different from ouabain and proscillaridin A in chemical structure, because ouabain and proscillaridin A show a UV maximum absorption at 220 nm and 300 nm, while the new inhibitor at 250 nm.

Three-dimensional scanning near field optical microscopy (3D-SNOM) imaging of random arrays of copper nanoparticles: implications for plasmonic solar cell enhancement.

PubMed

Ezugwu, Sabastine; Ye, Hanyang; Fanchini, Giovanni

2015-01-07

In order to investigate the suitability of random arrays of nanoparticles for plasmonic enhancement in the visible-near infrared range, we introduced three-dimensional scanning near-field optical microscopy (3D-SNOM) imaging as a useful technique to probe the intensity of near-field radiation scattered by random systems of nanoparticles at heights up to several hundred nm from their surface. We demonstrated our technique using random arrays of copper nanoparticles (Cu-NPs) at different particle diameter and concentration. Bright regions in the 3D-SNOM images, corresponding to constructive interference of forward-scattered plasmonic waves, were obtained at heights Δz ≥ 220 nm from the surface for random arrays of Cu-NPs of ∼ 60-100 nm in diameter. These heights are too large to use Cu-NPs in contact of the active layer for light harvesting in thin organic solar cells, which are typically no thicker than 200 nm. Using a 200 nm transparent spacer between the system of Cu-NPs and the solar cell active layer, we demonstrate that forward-scattered light can be conveyed in 200 nm thin film solar cells. This architecture increases the solar cell photoconversion efficiency by a factor of 3. Our 3D-SNOM technique is general enough to be suitable for a large number of other applications in nanoplasmonics.

Direct nanopatterning of 100 nm metal oxide periodic structures by Deep-UV immersion lithography.

PubMed

Stehlin, Fabrice; Bourgin, Yannick; Spangenberg, Arnaud; Jourlin, Yves; Parriaux, Olivier; Reynaud, Stéphanie; Wieder, Fernand; Soppera, Olivier

2012-11-15

Deep-UV lithography using high-efficiency phase mask has been developed to print 100 nm period grating on sol-gel based thin layer. High efficiency phase mask has been designed to produce a high-contrast interferogram (periodic fringes) under water immersion conditions for 244 nm laser. The demonstration has been applied to a new developed immersion-compatible sol-gel layer. A sol-gel photoresist prepared from zirconium alkoxides caped with methacrylic acids was developed to achieve 50 nm resolution in a single step exposure. The nanostructures can be thermally annealed into ZrO(2). Such route considerably simplifies the process for elaborating nanopatterned surfaces of transition metal oxides, and opens new routes for integrating materials of interest for applications in the field of photocatalysis, photovoltaic, optics, photonics or microelectronics.

Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers.

PubMed

Andringa, Anne-Marije; Perrotta, Alberto; de Peuter, Koen; Knoops, Harm C M; Kessels, Wilhelmus M M; Creatore, Mariadriana

2015-10-14

Encapsulation of organic (opto-)electronic devices, such as organic light-emitting diodes (OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device degradation induced by moisture and oxygen ingress. SiNx moisture permeation barriers have been fabricated using a very recently developed low-temperature plasma-assisted atomic layer deposition (ALD) approach, consisting of half-reactions of the substrate with the precursor SiH2(NH(t)Bu)2 and with N2-fed plasma. The deposited films have been characterized in terms of their refractive index and chemical composition by spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR). The SiNx thin-film refractive index ranges from 1.80 to 1.90 for films deposited at 80 °C up to 200 °C, respectively, and the C, O, and H impurity levels decrease when the deposition temperature increases. The relative open porosity content of the layers has been studied by means of multisolvent ellipsometric porosimetry (EP), adopting three solvents with different kinetic diameters: water (∼0.3 nm), ethanol (∼0.4 nm), and toluene (∼0.6 nm). Irrespective of the deposition temperature, and hence the impurity content in the SiNx films, no uptake of any adsorptive has been observed, pointing to the absence of open pores larger than 0.3 nm in diameter. Instead, multilayer development has been observed, leading to type II isotherms that, according to the IUPAC classification, are characteristic of nonporous layers. The calcium test has been performed in a climate chamber at 20 °C and 50% relative humidity to determine the intrinsic water vapor transmission rate (WVTR) of SiNx barriers deposited at 120 °C. Intrinsic WVTR values in the range of 10(-6) g/m2/day indicate excellent barrier properties for ALD SiNx layers as thin as 10 nm, competing with that of state-of-the-art plasma-enhanced chemical vapor-deposited SiNx layers of a few hundred nanometers in thickness.

Refractive index sensing in the visible/NIR spectrum using silicon nanopillar arrays.

PubMed

Visser, D; Choudhury, B Dev; Krasovska, I; Anand, S

2017-05-29

Si nanopillar (NP) arrays are investigated as refractive index sensors in the visible/NIR wavelength range, suitable for Si photodetector responsivity. The NP arrays are fabricated by nanoimprint lithography and dry etching, and coated with thin dielectric layers. The reflectivity peaks obtained by finite-difference time-domain (FDTD) simulations show a linear shift with coating layer thickness. At 730 nm wavelength, sensitivities of ~0.3 and ~0.9 nm/nm of SiO 2 and Si 3 N 4 , respectively, are obtained; and the optical thicknesses of the deposited surface coatings are determined by comparing the experimental and simulated data. The results show that NP arrays can be used for sensing surface bio-layers. The proposed method could be useful to determine the optical thickness of surface coatings, conformal and non-conformal, in NP-based optical devices.

General method for simultaneous optimization of light trapping and carrier collection in an ultra-thin film organic photovoltaic cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Cheng-Chia, E-mail: ct2443@columbia.edu; Grote, Richard R.; Beck, Jonathan H.

2014-07-14

We describe a general method for maximizing the short-circuit current in thin planar organic photovoltaic (OPV) heterojunction cells by simultaneous optimization of light absorption and carrier collection. Based on the experimentally obtained complex refractive indices of the OPV materials and the thickness-dependence of the internal quantum efficiency of the OPV active layer, we analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of the cell. This approach provides a general strategy for optimizing the power conversion efficiency of a wide range of OPV structures. In particular, as an experimental trial system, the approach ismore » applied here to a ultra-thin film solar cell with a SubPc/C{sub 60} photovoltaic structure. Using a patterned indium tin oxide (ITO) top contact, the numerically optimized designs achieve short-circuit currents of 0.790 and 0.980 mA/cm{sup 2} for 30 nm and 45 nm SubPc/C{sub 60} heterojunction layer thicknesses, respectively. These values correspond to a power conversion efficiency enhancement of 78% for the 30 nm thick cell, but only of 32% for a 45 nm thick cell, for which the overall photocurrent is actually higher. Applied to other material systems, the general optimization method can elucidate if light trapping strategies can improve a given cell architecture.« less

Evolution of zirconyl-stearate Langmuir monolayers and the synthesized ZrO2 thin films with pH

NASA Astrophysics Data System (ADS)

Choudhary, Raveena; Sharma, Rajni; Brar, Loveleen K.

2018-04-01

ZrO2 thin films have a wide range of applications ranging from photonics, antireflection coatings, and resistive oxygen gas sensors, as a gate dielectric and in high temperature fuel cells. We have used the deposition of zirconyl stearate monolayers followed by their oxidation as a method for the synthesis of zirconium oxide thin films. The zirconyl stearate films have been studied and deposited for first time to the best of our knowledge. The Langmuir monolayers are studied using pressure-Area (π-A) isotherms and oscillatory barrier method. The morphology of the films for limited number of layers was studied with FE-SEM to determine the effect of pH on the final ZrO2 film. The 200 layer deposition films show pure monoclinic phase. The films have a band gap ˜6.0eV with a strong PL emission peak is at 490 nm and a weak peak is at 423 nm. So the films formed by this deposition method are suitable for luminescent applications

Investigation on optical properties of Bi2.85La0.15TiNbO9 thin films by prism coupling technique

NASA Astrophysics Data System (ADS)

Zhang, Mingfu; Chen, Hengzhi; Yang, Bin; Cao, Wenwu

2009-12-01

Layered-perovskite ferroelectric Bi2.85La0.15TiNbO9 (LBTN) optical waveguiding thin films were grown on fused silica substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) revealed that the film is highly (00 l) textured. We observed sharp and distinct transverse electric (TE) and transverse magnetic (TM) multimodes and measured the refractive indices of LBTN thin films at 632.8 nm. The ordinary and extraordinary refractive indices were calculated to be n TE=2.358 and n TM=2.464, respectively. The film homogeneity and the film-substrate interface were analyzed using an improved version of the inverse Wentzel-Kramer-Brillouin (iWKB) method. The refractive index of the film remains constant at n 0 within the waveguiding layer. The average transmittance of the film is 70% in the wavelength range of 400-1400 nm and the optical waveguiding properties were evaluated by the optical prism coupling method. Our results showed that the LBTN films are very good electro-optical active material.

Low emissivity high-temperature tantalum thin film coatings for silicon devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinnerbauer, Veronika; Senkevich, Jay J.; Joannopoulos, John D.

The authors study the use of thin ( ~230 nm ) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 °C ). The key factors to achieve such a coating are low emissivity in the near infrared and superior thermal stability at high operating temperatures. The authors investigated the emissivity of Ta coatings deposited on Si with respect to deposition parameters, and annealing conditions, and temperature. The authors found thatmore » after annealing at temperatures ≥900 °C the emissivity in the near infrared ( 1–3 μm ) was reduced by a factor of 2 as compared to bare Si. In addition, the authors measured thermal emission at temperatures from 700 to 1000 °C , which is stable up to a heater temperature equal to the annealing temperature. Furthermore, Auger electron spectroscopy profiles of the coatings before and after annealing were taken to evaluate thermal stability. A thin (about 70 nm) Ta₂O₅ layer was found to act as an efficient diffusion barrier between the Si substrate and the Ta layer to prevent Si diffusion.« less

Absorptive carbon nanotube electrodes: Consequences of optical interference loss in thin film solar cells

NASA Astrophysics Data System (ADS)

Tait, Jeffrey G.; de Volder, Michaël F. L.; Cheyns, David; Heremans, Paul; Rand, Barry P.

2015-04-01

A current bottleneck in the thin film photovoltaic field is the fabrication of low cost electrodes. We demonstrate ultrasonically spray coated multiwalled carbon nanotube (CNT) layers as opaque and absorptive metal-free electrodes deposited at low temperatures and free of post-deposition treatment. The electrodes show sheet resistance as low as 3.4 Ω □-1, comparable to evaporated metallic contacts deposited in vacuum. Organic photovoltaic devices were optically simulated, showing comparable photocurrent generation between reflective metal and absorptive CNT electrodes for photoactive layer thickness larger than 600 nm when using archetypal poly(3-hexylthiophene) (P3HT) : (6,6)-phenyl C61-butyric acid methyl ester (PCBM) cells. Fabricated devices clearly show that the absorptive CNT electrodes display comparable performance to solution processed and spray coated Ag nanoparticle devices. Additionally, other candidate absorber materials for thin film photovoltaics were simulated with absorptive contacts, elucidating device design in the absence of optical interference and reflection.A current bottleneck in the thin film photovoltaic field is the fabrication of low cost electrodes. We demonstrate ultrasonically spray coated multiwalled carbon nanotube (CNT) layers as opaque and absorptive metal-free electrodes deposited at low temperatures and free of post-deposition treatment. The electrodes show sheet resistance as low as 3.4 Ω □-1, comparable to evaporated metallic contacts deposited in vacuum. Organic photovoltaic devices were optically simulated, showing comparable photocurrent generation between reflective metal and absorptive CNT electrodes for photoactive layer thickness larger than 600 nm when using archetypal poly(3-hexylthiophene) (P3HT) : (6,6)-phenyl C61-butyric acid methyl ester (PCBM) cells. Fabricated devices clearly show that the absorptive CNT electrodes display comparable performance to solution processed and spray coated Ag nanoparticle devices. Additionally, other candidate absorber materials for thin film photovoltaics were simulated with absorptive contacts, elucidating device design in the absence of optical interference and reflection. Electronic supplementary information (ESI) available: An animation of the MWCNT spray coating process, and five figures, including: a photograph of completed devices with MWCNT electrodes, performance metrics for devices with photoactive layer thickness up to 3000 nm, contour plots of simulated devices used to build Fig. 5, simulation data for perovskite devices, and a contour plot of the simplified equation of photoactive layer thickness required to attain a specified photocurrent ratio (x-axis) and absorption coefficient (y-axis). See DOI: 10.1039/c5nr01119a

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

PubMed

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Structural Evolution of Low-Molecular-Weight Poly(ethylene oxide)-block-polystyrene Diblock Copolymer Thin Film

PubMed Central

Huang, Xiaohua

2013-01-01

The structural evolution of low-molecular-weight poly(ethylene oxide)-block-polystyrene (PEO-b-PS) diblock copolymer thin film with various initial film thicknesses on silicon substrate under thermal annealing was investigated by atomic force microscopy, optical microscopy, and contact angle measurement. At film thickness below half of the interlamellar spacing of the diblock copolymer (6.2 nm), the entire silicon is covered by a polymer brush with PEO blocks anchored on the Si substrate due to the substrate-induced effect. When the film is thicker than 6.2 nm, a dense polymer brush which is equal to half of an interlamellar layer was formed on the silicon, while the excess material dewet this layer to form droplets. The droplet surface was rich with PS block and the PEO block crystallized inside the bigger droplet to form spherulite. PMID:24302862

Domain and rim growth kinetics in stratifying foam films

NASA Astrophysics Data System (ADS)

Zhang, Yiran; Yilixiati, Subinuer; Sharma, Vivek

Foam films are freely standing thin liquid films that typically consist of two surfactant-laden surfaces that are ~5 nm - 10 micron apart. Sandwiched between these interfacial layers is a fluid that drains primarily under the influence of viscous and interfacial forces, including disjoining pressure. Interestingly, a layered ordering of micelles inside the foam films (thickness <100 nm) leads to a stepwise thinning phenomena called stratification, which results in a thickness-dependent variation in reflected light intensity, visualized as progressively darker shades of gray. Thinner, darker domains spontaneously grow within foam films. During the initial expansion, a rim forms near the contact line between the growing thinner domain and the surrounding region, which influences the dynamics of domain growth as well as stratification Using newly developed interferometry digitial imaging optical microscopy (IDIOM) technique, we capture the rim evolution dynamics. Finally, we also develop a theoretical model to describe both rim evolution and domain growth dynamics.

Effect of Mg interlayer on perpendicular magnetic anisotropy of CoFeB films in MgO/Mg/CoFeB/Ta structure

NASA Astrophysics Data System (ADS)

Ma, Q. L.; Iihama, S.; Kubota, T.; Zhang, X. M.; Mizukami, S.; Ando, Y.; Miyazaki, T.

2012-09-01

The effects of Mg metallic interlayer on the magnetic properties of thin CoFeB films in MgO/Mg (tMg)/CoFeB (1.2 nm)/Ta structures were studied in this letter. Our experimental result shows that the CoFeB film exhibits perpendicular magnetic anisotropy (PMA) when the CoFeB and MgO layers are separated by a metallic Mg layer with a maximum thickness of 0.8 nm. The origin of PMA was discussed by considering the preferential transmission of the Δ1 symmetry preserved by the Mg interlayer in crystallized MgO/Mg/CoFeB/Ta. In addition, the thin Mg interlayer also contributes to enhancing the thermal stability and reducing the effective damping constant and coercivity of the CoFeB film.

Formation of mono-layered gold nanoparticles in shallow depth of SiO 2 thin film by low-energy negative-ion implantation

NASA Astrophysics Data System (ADS)

Tsuji, H.; Arai, N.; Ueno, K.; Matsumoto, T.; Gotoh, N.; Adachi, K.; Kotaki, H.; Gotoh, Y.; Ishikawa, J.

2006-01-01

Mono-layered gold nanoparticles just below the surface of silicon oxide film have been formed by a gold negative-ion implantation at a very low-energy, where the deviation of implanted atoms was sufficiently narrow comparing to the size of nanoparticles. Gold negative ions were implanted into SiO2 thin films on Si substrate at energies of 35, 15 and 1 keV. The samples were annealed in Ar flow for 1 h at 900 or 1000 °C. Cross-sectional TEM observation for the implantation at 1 keV showed existence of Au nanoparticles aligned in the same depth of 5 nm from the surface. The nanoparticles had almost same diameter of 7 nm. The nanoparticles were found to be gold single crystal from a high-resolution TEM image.

RBS, XRR and optical reflectivity measurements of Ti-TiO{sub 2} thin films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drogowska, K.; Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstrasse 23, 64287 Darmstadt; Tarnawski, Z., E-mail: tarnawsk@agh.edu.pl

2012-02-15

Highlights: Black-Right-Pointing-Pointer The single-, bi- and tri-layered films of Ti-TiO{sub 2} deposited onto Si(1 1 1) substrates. Black-Right-Pointing-Pointer Three methods RBS, XRR, optical reflectometer were used. Black-Right-Pointing-Pointer The real thickness of each layer was smaller than 50 nm. Black-Right-Pointing-Pointer Ti and TiO{sub 2} film-densities were slightly lower than the corresponding bulk values. -- Abstract: Single-, bi- and tri-layered films of Ti-TiO{sub 2} system were deposited by d.c. pulsed magnetron sputtering from metallic Ti target in an inert Ar or reactive Ar + O{sub 2} atmosphere. The nominal thickness of each layer was 50 nm. The chemical composition and its depthmore » profile were determined by Rutherford backscattering spectroscopy (RBS). Crystallographic structure was analysed by means of X-ray diffraction (XRD) at glancing incidence. X-ray reflectometry (XRR) was used as a complementary method for the film thickness and density evaluation. Modelling of the optical reflectivity spectra of Ti-TiO{sub 2} thin films deposited onto Si(1 1 1) substrates provided an independent estimate of the layer thickness. The combined analysis of RBS, XRR and reflectivity spectra indicated the real thickness of each layer less than 50 nm with TiO{sub 2} film density slightly lower than the corresponding bulk value. Scanning Electron Microscopy (SEM) cross-sectional images revealed the columnar growth of TiO{sub 2} layers. Thickness estimated directly from SEM studies was found to be in a good agreement with the results of RBS, XRR and reflectivity spectra.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moutanabbir, O.; Scholz, R.; Senz, S.

We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450 deg. C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475 deg. C. Extended internal surfaces develop around 550 deg. C leading to the exfoliation of GaN thin layer.

Selective Nanoscale Mass Transport across Atomically Thin Single Crystalline Graphene Membranes.

PubMed

Kidambi, Piran R; Boutilier, Michael S H; Wang, Luda; Jang, Doojoon; Kim, Jeehwan; Karnik, Rohit

2017-05-01

Atomically thin single crystals, without grain boundaries and associated defect clusters, represent ideal systems to study and understand intrinsic defects in materials, but probing them collectively over large area remains nontrivial. In this study, the authors probe nanoscale mass transport across large-area (≈0.2 cm 2 ) single-crystalline graphene membranes. A novel, polymer-free picture frame assisted technique, coupled with a stress-inducing nickel layer is used to transfer single crystalline graphene grown on silicon carbide substrates to flexible polycarbonate track etched supports with well-defined cylindrical ≈200 nm pores. Diffusion-driven flow shows selective transport of ≈0.66 nm hydrated K + and Cl - ions over ≈1 nm sized small molecules, indicating the presence of selective sub-nanometer to nanometer sized defects. This work presents a framework to test the barrier properties and intrinsic quality of atomically thin materials at the sub-nanometer to nanometer scale over technologically relevant large areas, and suggests the potential use of intrinsic defects in atomically thin materials for molecular separations or desalting. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation on structural and optical properties of ZnO film prepared by simple wet chemical method

NASA Astrophysics Data System (ADS)

Sholehah, Amalia; Mulyadi, Rendi; Haryono, Didied; Muttakin, Imamul; Rusbana, Tb Bahtiar; Mardiyanto

2018-04-01

ZnO thin layer has a broad potential application in electronic and optoelectronic devices. In this study, vertically align ZnO layers were deposited on ITO glass using wet chemistry method. The seed layers were prepared using electrodeposition technique at 3°C. The growing process was carried out using chemical bath deposition at 90°C. To improve the structural properties, two different hydrothermal treatment variations were applied separately. From the experiment, it is shown that the hydrothermal process using N2 gas has given the best result, with average diameter, crystallite size, and band-gap energy of 68.83 nm; 56.37 nm; and 3.16 eV, respectively.

Development of mirrors for precision laser gyros

NASA Astrophysics Data System (ADS)

Schmitt, Dirk-Roger

1987-11-01

Substrate polishing and interference-layer deposition techniques for the preparation of laser-gyro mirrors to operate at laser wavelength 633 nm and incidence angle 30 deg are investigated experimentally. The importance of high reflectivity and low backscatter for accurate laser-gyro angular-velocity measurement is explained, and the methods used to measure these parameters are outlined. Results for uncoated quartz glass, Zerodur, and Si monocrystal; thin Ag layers; alternate layers of SiO2 and TiO2, and Ag with a thin layer of SiO2 are presented in graphs and micrographs and characterized in detail. It is predicted that further improvements in polishing, the use of ion-beam deposition techniques, and perhaps the replacement of TiO2 with Ta2O5 will give mirrors with lower backscatter values.

Optimization of effective absorption enhancement of paired-strips gold nanoantennas arrays in organic thin-films

NASA Astrophysics Data System (ADS)

Yang, Zih-Ying; Su, Chen-Wei; Chen, Kuo-Ping

2018-01-01

This study sought to optimize the dimensional characteristics of paired-strips gold nanoantennas embedded in a P3HT: PCBM thin-film by taking into account the tradeoff between the size of the nanostructures and absorber layer as well as the gaps between nanoparticles, to maximize the effective absorption enhancement. The average enhancement behavior within the working region was discussed using integral analysis, which is important for overall enhancement. The discussion would focus on comparing the bands' features of paired-strips nanoantennas embedded in a dielectric thin-film, and in air. By the average absorption 3D slices plots, in which the dimension width, height, and gap are changed with a fixed wavelength; the optimized dimension of paired-strips nanoantennas could be realized. Fixing the period (400 nm) of paired-strips nanoantennas embedded in P3HT:PCBM thin-films (120 nm in thickness) enhanced absorption by 9.8 times.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham

2016-01-15

Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates thatmore » the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.« less

Gas Suppression via Copper Interlayers in Magnetron Sputtered Al-Cu2O Multilayers.

PubMed

Kinsey, Alex H; Slusarski, Kyle; Sosa, Steven; Weihs, Timothy P

2017-07-05

The use of thin-foil, self-propagating thermite reactions to bond components successfully depends on the ability to suppress gas generation and avoid pore formation during the exothermic production of brazes. To study the mechanisms of vapor production in diluted thermites, thin film multilayer Al-Cu-Cu 2 O-Cu foils are produced via magnetron sputtering, where the Cu layer thickness is systematically increased from 0 to 100 nm in 25 nm increments. The excess Cu layers act as diffusion barriers, limiting the transport of oxygen from the oxide to the Al fuel, as determined by slow heating differential scanning calorimetry experiments. Furthermore, by adding excess Cu to the system, the temperature of the self-propagating thermite reactions drops below the boiling point of Cu, eliminating the metal vapor production. It is determined that Cu vapor production can be eliminated by increasing the Cu interlayer thickness above 50 nm. However, the porous nature of the final products suggests that only metal vapor production is suppressed via dilution. Gas generation via oxygen release is still capable of producing a porous reaction product.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

Optical properties of thin merocyanine dye layers for photovoltaic applications

NASA Astrophysics Data System (ADS)

Dikova, J.; Kitova, S.; Stoyanova, D.; Vasilev, A.; Deligeorgiev, T.; Angelova, S.

2014-05-01

The potentiality was studied of our newly synthesized push-pull type merocyanine dye, labeled A1, for use as an electron donating component in solution-processed bulk heterojunction (BHJ) organic solar cells. For the purpose, a soluble n-type fullerene, (6,6)-phenyl C61 butyric acid methyl ester (PCBM), which is currently and in the ear future without an alternative, was chosen as an acceptor. The optical constants (n and k) of thin films obtained by spin coating from solutions in chlorobenzene of A1 and of an A1/PCBM blend were determined by spectrophotometric measurements. Further, an optical simulation of a standard BHJ cell with an active layer of an A1dye/PCMB blend was performed using a transfer-matrix formalism. Thus, the optimum thickness of the active layer was calculated to be about 80 nm, which provides overlapping of the total absorption with the solar spectrum in the broad range 400 nm - 800 nm. Finally, the maximum current density, Jsc, was determined to be 13 mA cm2 assuming that the internal quantum efficiency, IQE, is unity. Comparing the calculated Jsc with data on some advanced small-molecule BHJ devices, the prospects for practical applications of the new merocyanine dye are discussed.

Physical property improvement of IZTO thin films using a hafnia buffer layer

NASA Astrophysics Data System (ADS)

Park, Jong-Chan; Kang, Seong-Jun; Choi, Byeong-Gyun; Yoon, Yung-Sup

2018-01-01

Hafnia (HfO2) has excellent mechanical and chemical stability, good transmittance, high dielectric constant, and radiation resistance property; thus, it can prevent impurities from permeating into the depositing films. So, we deposited hafnia films with various thicknesses in the range of 0-60 nm on polyethylene naphthalate (PEN) substrates before depositing indium-zinc-tin oxide (IZTO) thin films on them using RF magnetron sputtering, and their structural, morphological, optical, and electrical properties were evaluated. All IZTO thin films were successfully deposited without cracks or pinholes and had amorphous structures. As the thickness of the hafnia film increased to 30 nm, the overall properties improved; a surface roughness of 2.216 nm, transmittance of 82.59% at 550 nm, resistivity of 5.66 × 10-4 Ω cm, sheet resistance of 23.60 Ω/sq, and figure of merit of 6.26 × 10-3 Ω-1 were realized. These results indicate that the structure and materials studied in this research are suitable for application in flexible transparent electronic devices such as organic light emitting diodes, liquid crystal displays, touch panels, and solar cells.

Casimir Pressure in Mds-Structures

NASA Astrophysics Data System (ADS)

Yurova, V. A.; Bukina, M. N.; Churkin, Yu. V.; Fedortsov, A. B.; Klimchitskaya, G. L.

2012-07-01

The Casimir pressure on the dielectric layer in metal-dielectric-semiconductor (MDS) structures is calculated in the framework of the Lifshitz theory at nonzero temperature. In this calculation the standard parameters of semiconductor devices with a thin dielectric layer are used. We consider the thickness of a layer decreasing from 40 to 1 nm. At the shortest thickness the Casimir pressure achieves 8 MPa. At small thicknesses the results are compared with the predictions of nonrelativistic theory.

Role of the Heat Sink Layer Ta for Ultrafast Spin Dynamic Process in Amorphous TbFeCo Thin Films

NASA Astrophysics Data System (ADS)

Ren, Y.; Zhang, Z. Z.; Min, T.; Jin, Q. Y.

The ultrafast demagnetization processes (UDP) in Ta (t nm)/TbFeCo (20 nm) films have been studied using the time-resolved magneto-optical Kerr effect (TRMOKE). With a fixed pump fluence of 2 mJ/cm2, for the sample without a Ta underlayer (t=0nm), we observed the UDP showing a two-step decay behavior, with a relatively longer decay time (τ2) around 3.0 ps in the second step due to the equilibrium of spin-lattice relaxation following the 4f occupation. As a 10nm Ta layer is deposited, the two-step demagnetization still exists while τ2 decreases to ˜1.9ps. Nevertheless, the second-step decay (τ2=0ps) disappears as the Ta layer thickness is increased up to 20 nm, only the first-step UDP occurs within 500 fs, followed by a fast recovery process. The rapid magnetization recovery rate strongly depends on the pump fluence. We infer that the Ta layer provides conduction electrons involving the thermal equilibrium of spin-lattice interaction and serves as heat bath taking away energy from spins of TbFeCo alloy film in UDP.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

High performance sandwich structured Si thin film anodes with LiPON coating

NASA Astrophysics Data System (ADS)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-06-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solid-electrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

High performance sandwich structured Si thin film anodes with LiPON coating

NASA Astrophysics Data System (ADS)

Luo, Xinyi; Lang, Jialiang; Lv, Shasha; Li, Zhengcao

2018-04-01

The sandwich structured silicon thin film anodes with lithium phosphorus oxynitride (LiPON) coating are synthesized via the radio frequency magnetron sputtering method, whereas the thicknesses of both layers are in the nanometer range, i.e. between 50 and 200 nm. In this sandwich structure, the separator simultaneously functions as a flexible substrate, while the LiPON layer is regarded as a protective layer. This sandwich structure combines the advantages of flexible substrate, which can help silicon release the compressive stress, and the LiPON coating, which can provide a stable artificial solidelectrolyte interphase (SEI) film on the electrode. As a result, the silicon anodes are protected well, and the cells exhibit high reversible capacity, excellent cycling stability and good rate capability. All the results demonstrate that this sandwich structure can be a promising option for high performance Si thin film lithium ion batteries.

Evidence for Space Charge in Atomic Layer Epitaxy ZnS:Mn Alternating- Current Thin-Film Electroluminescent Devices,

DTIC Science & Technology

1993-01-01

exists wior with ra hho agop io model within the bulk portion of the phosphor layer. Although tAon to obtin alteratinbilarplses with mp del this...field region within the ZnS. emission with a peak at 460 nm and which exhibited ther- Postulating the existence of such a low-field region mal

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Characterization and Modeling of Nano-organic Thin Film Phototransistors Based on 6,13(Triisopropylsilylethynyl)-Pentacene: Photovoltaic Effect

NASA Astrophysics Data System (ADS)

Jouili, A.; Mansouri, S.; Al-Ghamdi, Ahmed A.; El Mir, L.; Farooq, W. A.; Yakuphanoglu, F.

2017-04-01

Organic thin film transistors based on 6,13(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) with various channel widths and thicknesses of the active layer (300 nm and 135 nm) were photo-characterized. The photoresponse behavior and the gate field dependence of the charge transport were analyzed in detail. The surface properties of TIPS-pentacene deposited on silicon dioxide substrate were investigated using an atomic force microscope. We confirm that the threshold voltage values of the TIPS-pentacene transistor depend on the intensity of white light illumination. With the multiple trapping and release model, we have developed an analytical model that was applied to reproduce the experimental output characteristics of organic thin film transistors based on TIPS-pentacene under dark and under light illumination.

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

PubMed

Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

2007-08-01

Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

Plasmonic Ag nanostructures on thin substrates for enhanced energy harvesting

NASA Astrophysics Data System (ADS)

Osgood, R. M.; Giardini, S. A.; Carlson, J. B.; Gear, C.; Diest, K.; Rothschild, M.; Fernandes, G. E.; Xu, J.; Kooi, S.; Periasamy, P.; O'Hayre, R.; Parilla, P.; Berry, J.; Ginley, D.

2013-09-01

Nanoparticles and nanostructures with plasmonic resonances are currently being employed to enhance the efficiency of solar cells. Ag stripe arrays have been shown theoretically to enhance the short-circuit current of thin silicon layers. Such Ag stripes are combined with 200 nm long and 60 nm wide "teeth", which act as nanoantennas, and form vertical rectifying metal-insulator-metal (MIM) nanostructures on metallic substrates coated with thin oxides, such as Nb/NbOx films. We characterize experimentally and theoretically the visible and near-infrared spectra of these "stripeteeth" arrays, which act as microantenna arrays for energy harvesting and detection, on silicon substrates. Modeling the stripe-teeth arrays predicts a substantial net a.c. voltage across the MIM diode, even when the stripe-teeth microrectenna arrays are illuminated at normal incidence.

Subcritical crack growth in SiNx thin-film barriers studied by electro-mechanical two-point bending

NASA Astrophysics Data System (ADS)

Guan, Qingling; Laven, Jozua; Bouten, Piet C. P.; de With, Gijsbertus

2013-06-01

Mechanical failure resulting from subcritical crack growth in the SiNx inorganic barrier layer applied on a flexible multilayer structure was studied by an electro-mechanical two-point bending method. A 10 nm conducting tin-doped indium oxide layer was sputtered as an electrical probe to monitor the subcritical crack growth in the 150 nm dielectric SiNx layer carried by a polyethylene naphthalate substrate. In the electro-mechanical two-point bending test, dynamic and static loads were applied to investigate the crack propagation in the barrier layer. As consequence of using two loading modes, the characteristic failure strain and failure time could be determined. The failure probability distribution of strain and lifetime under each loading condition was described by Weibull statistics. In this study, results from the tests in dynamic and static loading modes were linked by a power law description to determine the critical failure over a range of conditions. The fatigue parameter n from the power law reduces greatly from 70 to 31 upon correcting for internal strain. The testing method and analysis tool as described in the paper can be used to understand the limit of thin-film barriers in terms of their mechanical properties.

Pinholes and Nano-oxide Specular Layers in Spin Valves

NASA Astrophysics Data System (ADS)

Fry, R. A.; Egelhoff, W. F., Jr.; McMichael, R. D.; Chen, P. J.; Powell, C. J.; Beach, G.; Berkowitz, A. E.

2001-03-01

Recently, nano-oxide layers (NOL) in giant magnetoresistance (GMR) spin valves have attracted interest as a method of achieving increased GMR associated with specular reflection at Co/oxide interfaces. The NOL must be thin enough so that strong magnetic coupling across it exists; otherwise, the films separated by NOL could switch separately. We have investigated the structure NiO/2.5 nm Co/2.5 nm Cu/2 nm Co/NOL/2 nm Co/10 nm IrMn. The bottom Co is pinned by NiO more strongly than the top Co is pinned by IrMn; thus the top Co film can be switched to observe GMR loops. With no NOL, the GMR loop obtained by switching the 4 nm top Co film is shifted 300 Oe by the exchange bias of IrMn. Using CoO as a NOL, at thickness of 1 nm there is a sudden drop from 300 Oe to <10 Oe. It appears that pinhole coupling at CoO<1 nm forces the two Co films to switch together, but at CoO 1 nm the pinholes close up and the Co films switch separately. Such observations constitute a new approach to the study of pinholes, and we use it to investigate several oxides and metal spacer layers.

A fast response hydrogen sensor with Pd metallic grating onto a fiber's end-face

NASA Astrophysics Data System (ADS)

Yan, Haitao; Zhao, Xiaoyan; Zhang, Chao; Li, Qiu-Ze; Cao, Jingxiao; Han, Dao-Fu; Hao, Hui; Wang, Ming

2016-01-01

We demonstrated an integrated hydrogen sensor with Pd metallic grating fabricated on a fiber end-face. The grating consists of three thin metal layers in stacks, Au, WO3 and Pd. The WO3 is used as a waveguide layer between the Pd and Au layer. The Pd layer is etched by using a focused ion beam (FIB) method, forming a Pd metallic grating with period of 450 nm. The sensor is experimentally exposed to hydrogen gas environment. Changing the concentration from 0% to 4% which is the low explosive limit (LEL), the resonant wavelength measured from the reflection experienced 28.10 nm spectral changes in the visible range. The results demonstrated that the sensor is sensitive for hydrogen detection and it has fast response and low temperature effect.

Enhancement of the anti-damping spin torque efficacy of platinum by interface modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Minh-Hai; Pai, Chi-Feng; Nguyen, Kayla X.

2015-06-01

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of ≈0.5 nm layer of Hf between a Pt film and a thin, ≤2 nm, Fe{sub 60}Co{sub 20}B{sub 20} ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction ofmore » the ferromagnet's absorption of the SHE generated spin current.« less

Nanostructuring of sapphire using time-modulated nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Lorenz, P.; Zagoranskiy, I.; Ehrhardt, M.; Bayer, L.; Zimmer, K.

2017-02-01

The nanostructuring of dielectric surfaces using laser radiation is still a challenge. The IPSM-LIFE (laser-induced front side etching using in-situ pre-structured metal layer) method allows the easy, large area and fast laser nanostructuring of dielectrics. At IPSM-LIFE a metal covered dielectric is irradiated where the structuring is assisted by a self-organized molten metal layer deformation process. The IPSM-LIFE can be divided into two steps: STEP 1: The irradiation of thin metal layers on dielectric surfaces results in a melting and nanostructuring process of the metal layer and partially of the dielectric surface. STEP 2: A subsequent high laser fluence treatment of the metal nanostructures result in a structuring of the dielectric surface. At this study a sapphire substrate Al2O3(1-102) was covered with a 10 nm thin molybdenum layer and irradiated by an infrared laser with an adjustable time-dependent pulse form with a time resolution of 1 ns (wavelength λ = 1064 nm, pulse duration Δtp = 1 - 600 ns, Gaussian beam profile). The laser treatment allows the fabrication of different surface structures into the sapphire surface due to a pattern transfer process. The resultant structures were investigated by scanning electron microscopy (SEM). The process was simulated and the simulation results were compared with experimental results.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

PubMed

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China; Zhu, Jian

2015-12-15

We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0°more » to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device efficiency.« less

Fabrication of PVDF-based blend membrane with a thin hydrophilic deposition layer and a network structure supporting layer via the thermally induced phase separation followed by non-solvent induced phase separation process

NASA Astrophysics Data System (ADS)

Wu, Zhiguo; Cui, Zhenyu; Li, Tianyu; Qin, Shuhao; He, Benqiao; Han, Na; Li, Jianxin

2017-10-01

A simple strategy of thermally induced phase separation followed by non-solvent induced phase separation (TIPS-NIPS) is reported to fabricate poly (vinylidene fluoride) (PVDF)-based blend membrane. The dissolved poly (styrene-co-maleic anhydride) (SMA) in diluent prevents the crystallization of PVDF during the cooling process and deposites on the established PVDF matrix in the later extraction. Compared with traditional coating technique, this one-step TIPS-NIPS method can not only fabricate a supporting layer with an interconnected network structure even via solid-liquid phase separation of TIPS, but also form a uniform SMA skin layer approximately as thin as 200 nm via surface deposition of NIPS. Besides the better hydrophilicity, what's interesting is that the BSA rejection ratio increases from 48% to 94% with the increase of SMA, which indicates that the separation performance has improved. This strategy can be conveniently extended to the creation of firmly thin layer, surface functionalization and structure controllability of the membrane.

Dynamics of ultra-thin polystyrene with and without a (artificial) dead layer studied by resonance enhanced dynamic light scattering

NASA Astrophysics Data System (ADS)

Vianna, S. D. B.; Lin, F. Y.; Plum, M. A.; Duran, H.; Steffen, W.

2017-05-01

Using non-invasive, marker-free resonance enhanced dynamic light scattering, the dynamics of capillary waves on ultrathin polystyrene films' coupling to the viscoelastic and mechanical properties have been studied. The dynamics of ultrathin polymer films is still debated. In particular the question of what influence either the solid substrate and/or the fluid-gas interface has on the dynamics and the mechanical properties of films of glass forming liquids as polymers is in the focus of the present research. As a consequence, e.g., viscosity close to interfaces and thus the average viscosity of very thin films are prone to change. This study is focused on atactic, non-entangled polystyrene thin films on the gold surface. A slow dynamic mode was observed with Vogel-Fulcher-Tammann temperature dependence, slowing down with decreasing film thickness. We tentatively attribute this relaxation mode to overdamped capillary waves because of its temperature dependence and the dispersion with a wave vector which was found. No signs of a more mobile layer at the air/polymer interface or of a "dead layer" at the solid/polymer interface were found. Therefore we investigated the influence of an artificially created dead layer on the capillary wave dynamics by introducing covalently bound polystyrene polymer brushes as anchors. The dynamics was slowed down to a degree more than expected from theoretical work on the increase of density close to the solid liquid interface—instead of a "dead layer" of 2 nm, the interaction seems to extend more than 10 nm into the polymer.

Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

NASA Astrophysics Data System (ADS)

Chen, G. S.; Chen, S. T.

2000-06-01

Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100 °C greater than that of the Ta67N33 diffusion barriers. Moreover, multilayered films, formed by alternately stacking the Ta67N33 and Ta64N36 layers with an optimized bilayer thickness (λ) of 10 nm, can dramatically reduce the intrinsic compressive stress to only 0.7 GPa and undergo high-temperature annealing without crystallization. Therefore, the Ta67N33/Ta64N36 multilayered films exhibit a much better barrier performance than the highly crystallization-resistant Ta64N36 single-layered films.

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

NASA Astrophysics Data System (ADS)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

Dual functional porous anti-reflective coatings with a photocatalytic effect based on a single layer system

NASA Astrophysics Data System (ADS)

Jilavi, M. H.; Mousavi, S. H.; Müller, T. S.; de Oliveira, P. W.

2018-05-01

Anti-reflection and photocatalytic properties are desirable for improving the optical properties of electronic devices. We describe a method of fabrication a single-layer, anti-reflective (AR) thin film with an additional photocatalytic property. The layer is deposited on glass substrates by means of a low-cost dip-coating method using a SiO2-TiO2 solution. A comparative study was undertaken to investigate the effects of TiO2 concentrations on the photocatalytic properties of the film and to determine the optimal balance between transmittance and photocatalysis. The average transmittance increases from T = 90.51% to T = 95.46 ± 0.07% for the wavelengths between 380 and 1200 nm. The structural characterization indicated the formation of thin, porous SiO2-TiO2 films with a roughness of less than 7.5 nm. The quality of the samples was evaluated by a complete test program of the mechanical, chemical and accelerated weathering stability. This results open up new possibilities for cost-effective AR coatings for the glass and solar cell industries.

Design and development of multilayer wideband antireflection coating and its annealing study

NASA Astrophysics Data System (ADS)

Jena, S.; Tokas, R. B.; Udupa, D. V.; Thakur, S.; Sahoo, N. K.

2018-04-01

Reflection loss occurs at the glass-air interface, limits performance of many optical devices such as eyeglass, camera lenses, and photovoltaic solar cells. Antireflection (AR) coating on the glass reduces the reflection loss and improves efficiency of such devices. In this paper, wideband AR coating in the visible region has been designed and developed using ZrO2-MgO/SiO2 multilayer. The thicknesses of individual thin layers are numerically optimized to get maximum transmission of the visible light. The optimized four thin layers have been deposited on BK7 glass substrate using electron beam evaporation technique. The measured transmission spectrum of the 4-layer AR coating is compared with that of simulated spectrum. The transmission of the single side AR coating increases by more than 3% as compared to that of bare glass substrate in the wavelength region of 470 nm - 810 nm. The wideband AR coating has been annealed at 200°C for 4 hours in ambient condition. The transmission of the AR coating decreases after the annealing, resulting degradation in its wideband AR characteristics.

Efficient semitransparent perovskite solar cells for 23.0%-efficiency perovskite/silicon four-terminal tandem cells

DOE PAGES

Chen, Bo; Bai, Yang; Yu, Zhengshan; ...

2016-07-19

Here, we have investigated semi-transparent perovskite solar cells and infrared enhanced silicon heterojunction cells for high-efficiency tandem devices. A semi-transparent metal electrode with good electrical conductivity and optical transparency has been fabricated by thermal evaporation of 7 nm of Au onto a 1-nm-thick Cu seed layer. For this electrode to reach its full potential, MAPbI3 thin films were formed by a modified one-step spin-coating method, resulting in a smooth layer that allowed the subsequent metal thin film to remain continuous. The fabricated semi-transparent perovskite solar cells demonstrated 16.5% efficiency under one-sun illumination, and were coupled with infrared-enhanced silicon heterojunction cellsmore » tuned specifically for perovskite/Si tandem devices. A double-layer antireflection coating at the front side and MgF2 reflector at rear side of the silicon heterojunction cells reduced parasitic absorption of near-infrared light, leading to 6.5% efficiency after filtering with a perovskite device and 23.0% summed efficiency for the perovskite/Si tandem device.« less

Nanoscale pillar arrays for separations

DOE PAGES

Kirchner, Teresa; Strickhouser, Rachel; Hatab, Nahla; ...

2015-04-01

The work presented herein evaluates silicon nano-pillar arrays for use in planar chromatography. Electron beam lithography and metal thermal dewetting protocols were used to create nano-thin layer chromatography platforms. With these fabrication methods we are able to reduce the size of the characteristic features in a separation medium below that used in ultra-thin layer chromatography; i.e. pillar heights are 1-2μm and pillar diameters are typically in the 200- 400nm range. In addition to the intrinsic nanoscale aspects of the systems, it is shown they can be further functionalized with nanoporous layers and traditional stationary phases for chromatography; hence exhibit broad-rangingmore » lab-on-a-chip and point-of-care potential. Because of an inherent high permeability and very small effective mass transfer distance between pillars, chromatographic efficiency can be very high but is enhanced herein by stacking during development and focusing while drying, yielding plate heights in the nm range separated band volumes. Practical separations of fluorescent dyes, fluorescently derivatized amines, and anti-tumor drugs are illustrated.« less

Novel fabrication method for 3D microstructures using surface-activated bonding and its application to micro-mechanical parts

NASA Astrophysics Data System (ADS)

Yamada, Takayuki; Takahashi, Mutsuya; Ozawa, Takashi; Tawara, Satoshi; Goto, Takayuki

2002-11-01

The purpose of this work is to demonstrate that a novel fabrication method for 3-D microstructures (FORMULA) is applicable to fabrication of micro mechanical parts with a large flexibility. This method is a kind of layer manufacturing method of thin films for metallic or dielectric microstructures using surface-activated bonding (SAB). The bonding interfaces of thin films are investigated by transmission electron microscope (TEM). Voids were observed at the interfaces of both pure aluminum films and Al-Cu alloy films. The ratio of void on the Al-Cu/Al-Cu interface is much larger than that of Al/Al interface, although the films have the same surface roughness of 3nm in Ra (average roughness). And approximately 10nm-thick amorphous intermediate layers were found at the interfaces. Furthermore, we have fabricated a micro gear of 900μm in diameter and 200μm in height, which is about ten times as large as our previous test pieces. Overhung structures such as a bridge structure and a cantilever were also fabricated without supporting layers beneath them.

Efficient semitransparent perovskite solar cells for 23.0%-efficiency perovskite/silicon four-terminal tandem cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Bo; Bai, Yang; Yu, Zhengshan

Here, we have investigated semi-transparent perovskite solar cells and infrared enhanced silicon heterojunction cells for high-efficiency tandem devices. A semi-transparent metal electrode with good electrical conductivity and optical transparency has been fabricated by thermal evaporation of 7 nm of Au onto a 1-nm-thick Cu seed layer. For this electrode to reach its full potential, MAPbI3 thin films were formed by a modified one-step spin-coating method, resulting in a smooth layer that allowed the subsequent metal thin film to remain continuous. The fabricated semi-transparent perovskite solar cells demonstrated 16.5% efficiency under one-sun illumination, and were coupled with infrared-enhanced silicon heterojunction cellsmore » tuned specifically for perovskite/Si tandem devices. A double-layer antireflection coating at the front side and MgF2 reflector at rear side of the silicon heterojunction cells reduced parasitic absorption of near-infrared light, leading to 6.5% efficiency after filtering with a perovskite device and 23.0% summed efficiency for the perovskite/Si tandem device.« less

Epitaxial growth of (001)-oriented Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on a-plane sapphire with an MgO/ZnO bridge layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao Bo; Liu Hongrui; Avrutin, Vitaliy

2009-11-23

High quality (001)-oriented Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown on a-plane sapphire (1120) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented MgO (10 nm) prepared by plasma-assisted molecular beam epitaxy. X-ray diffraction revealed the formation of three sets of in-plane BST domains, offset from one another by 30 deg., which is consistent with the in-plane symmetry of the MgO layer observed by in situ reflective high electron energy diffraction. The in-plane epitaxial relationship of BST, MgO, and ZnO has been determined to be BST [110]//MgO [110]//ZnO [1120]more » and BST [110]/MgO [110]//ZnO [1100]. Capacitance-voltage measurements performed on BST coplanar interdigitated capacitor structures revealed a high dielectric tunability of up to 84% at 1 MHz.« less

Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

NASA Astrophysics Data System (ADS)

Liu, Yu-Rong; Zhao, Gao-Wei; Lai, Pai-To; Yao, Ruo-He

2016-08-01

Si-doped zinc oxide (SZO) thin films are deposited by using a co-sputtering method, and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures. The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated. Moreover, the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure. The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm, and the optical band gap of the SZO film gradually increases with increasing Si content. The Si-doping can effectively suppress the grain growth of ZnO, revealed by atomic force microscope analysis. Compared with that of the undoped ZnO TFT, the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10-12 A, and thus the on/off current ratio is increased by more than two orders of magnitude. In summary, the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 106 and superior stability under gate-bias and drain-bias stress. Projected supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085), the Natural Science Foundation of Guangdong Province (Grant No. 2016A030313474), and the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of the University of Hong Kong, China.

Si III OV Bright Line of Scattering Polarized Light That Has Been Observed in the CLASP and Its Center-to-Limb Variation

NASA Technical Reports Server (NTRS)

Katsukawa, Yukio; Ishikawa, Ryoko; Kano, Ryohei; Kubo, Masahito; Noriyuki, Narukage; Kisei, Bando; Hara, Hirohisa; Yoshiho, Suematsu; Goto, Motouji; Ishikawa, Shinnosuke;

Surface plasmon-assisted microscope.

PubMed

Borejdo, Julian; Gryczynski, Zygmunt; Fudala, Rafal; Joshi, Chaitanya R; Borgmann, Kathleen; Ghorpade, Anuja; Gryczynski, Ignacy

2018-06-01

Total internal reflection microscopy (TIRF) has been a powerful tool in biological research. The most valuable feature of the method has been the ability to image 100- to 200-nm-thick layer of cell features adjacent to a coverslip, such as membrane lipids, membrane receptors, and structures proximal-to-basal membranes. Here, we demonstrate an alternative method of imaging thin-layer proximal-to-basal membranes by placing a sample on a high refractive index coverslip covered by a thin layer of gold. The sample is illuminated using the Kretschmann method (i.e., from the top to an aqueous medium). Fluorophores that are close to the metal surface induce surface plasmons in the metal film. Fluorescence from fluorophores near the metal surface couple with surface plasmons allowing them to penetrate the metal surface and emerge at a surface plasmon coupled emission angle. The thickness of the detection layer is further reduced in comparison with TIRF by metal quenching of fluorophores at a close proximity (below 10 nm) to a surface. Fluorescence is collected by a high NA objective and imaged by EMCCD or converted to a signal by avalanche photodiode fed by a single-mode optical fiber inserted in the conjugate image plane of the objective. The system avoids complications of through-the-objective TIRF associated with shared excitation and emission light path, has thin collection thickness, produces excellent background rejection, and is an effective method to study molecular motion. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Measuring the bending of asymmetric planar EAP structures

NASA Astrophysics Data System (ADS)

Weiss, Florian M.; Zhao, Xue; Thalmann, Peter; Deyhle, Hans; Urwyler, Prabitha; Kovacs, Gabor; Müller, Bert

2013-04-01

The geometric characterization of low-voltage dielectric electro-active polymer (EAP) structures, comprised of nanometer thickness but areas of square centimeters, for applications such as artificial sphincters requires methods with nanometer precision. Direct optical detection is usually restricted to sub-micrometer resolution because of the wavelength of the light applied. Therefore, we propose to take advantage of the cantilever bending system with optical readout revealing a sub-micrometer resolution at the deflection of the free end. It is demonstrated that this approach allows us to detect bending of rather conventional planar asymmetric, dielectric EAP-structures applying voltages well below 10 V. For this purpose, we built 100 μm-thin silicone films between 50 nm-thin silver layers on a 25 μm-thin polyetheretherketone (PEEK) substrate. The increase of the applied voltage in steps of 50 V until 1 kV resulted in a cantilever bending that exhibits only in restricted ranges the expected square dependence. The mean laser beam displacement on the detector corresponded to 6 nm per volt. The apparatus will therefore become a powerful mean to analyze and thereby improve low-voltage dielectric EAP-structures to realize nanometer-thin layers for stack actuators to be incorporated into artificial sphincter systems for treating severe urinary and fecal incontinence.

Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

PubMed

Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

2014-12-01

The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Photo-induced persistent inversion of germanium in a 200-nm-deep surface region.

PubMed

Prokscha, T; Chow, K H; Stilp, E; Suter, A; Luetkens, H; Morenzoni, E; Nieuwenhuys, G J; Salman, Z; Scheuermann, R

2013-01-01

The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a persistent inversion from n- to p-type in a 200-nm-thick surface layer of a germanium wafer by illumination with white and blue light. We induce the inversion with a half-life of ~12 hours at a temperature of 220 K which disappears above 280 K. The photo-induced inversion is absent for a sample with a 20-nm-thick gold capping layer providing a Schottky barrier at the interface. This indicates that charge accumulation at the surface is essential to explain the observed inversion. The contactless change of carrier concentration is potentially interesting for device applications in opto-electronics where the gate electrode and gate oxide could be replaced by the semiconductor surface.

Broadband operation of rolled-up hyperlenses

NASA Astrophysics Data System (ADS)

Schwaiger, Stephan; Rottler, Andreas; Bröll, Markus; Ehlermann, Jens; Stemmann, Andrea; Stickler, Daniel; Heyn, Christian; Heitmann, Detlef; Mendach, Stefan

2012-06-01

This work is related to an earlier publication [Schwaiger , Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.102.163903 102, 163903 (2009)], where we demonstrated by means of fiber-based transmission measurements that rolled-up Ag-(In)GaAs multilayers represent three-dimensional metamaterials with a plasma edge which is tunable over the visible and near-infrared regime by changing the thickness ratio of Ag and (In)GaAs, and predicted by means of finite-difference time-domain simulations that hyperlensing occurs at this frequency-tunable plasma edge. In the present work we develop a method to measure reflection curves on these structures and find that they correspond to the same tunable plasma edge. We find that retrieving the effective parameters from transmission and reflection data fails, because our realized metamaterials exceed the single-layer thicknesses of 5nm, which we analyze to be the layer thickness limit for the applicability of effective parameter retrieval. We show that our realized structures nevertheless have the functionality of an effective metamaterial by supplying a detailed finite-difference time-domain study which compares light propagation through our realized structure (17-nm-thick Ag layers and 34-nm-thick GaAs layers) and light propagation through an idealized structure of the same total thickness but with very thin layers [2-nm-thick Ag layers and 4-nm-thick (In)GaAs layers]. In particular, our simulations predict broadband hyperlensing covering a large part of the visible spectrum for both the idealized and our realized structures.

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Clustering of gold particles in Au implanted CrN thin films: The effect on the SPR peak position

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Schmidt, E.; Mitrić, M.; Bibić, N.; Rakočević, Z.; Ronning, C.

2017-12-01

We report on the formation of gold particles in 280 nm thin polycrystalline CrN layers caused by Au+ ion implantation. The CrN layers were deposited at 150 °C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 150 keV Au+ ions to fluences of 2 × 1016 cm-2 to 4.1 × 1016 cm-2. The implanted layers were analysed by the means of Rutherford backscattering spectrometry, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry measurements. The results revealed that the Au atoms are situated in the near-surface region of the implanted CrN layers. At the fluence of 2 × 1016 cm-2 the formation of Au particles of ∼200 nm in diameter has been observed. With increasing Au ion fluence the particles coalesce into clusters with dimensions of ∼1.7 μm. The synthesized particles show a strong absorption peak associated with the excitation of surface plasmon resonances (SPR). The position of the SPR peak shifted in the range of 426.8-690.5 nm when the Au+ ion fluence was varied from 2 × 1016 cm-2 to 4.1 × 1016 cm-2. A correlation of the shift in the peak wavelength caused by the change in the particles size and clustering has been revealed, suggesting that the interaction between Au particles dominate the surface plasmon resonance effect.

Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material.

PubMed

Lu, S B; Miao, L L; Guo, Z N; Qi, X; Zhao, C J; Zhang, H; Wen, S C; Tang, D Y; Fan, D Y

2015-05-04

Black phosphorous (BP), the most thermodynamically stable allotrope of phosphorus, is a high-mobility layered semiconductor with direct band-gap determined by the number of layers from 0.3 eV (bulk) to 2.0 eV (single layer). Therefore, BP is considered as a natural candidate for broadband optical applications, particularly in the infrared (IR) and mid-IR part of the spectrum. The strong light-matter interaction, narrow direct band-gap, and wide range of tunable optical response make BP as a promising nonlinear optical material, particularly with great potentials for infrared and mid-infrared opto-electronics. Herein, we experimentally verified its broadband and enhanced saturable absorption of multi-layer BP (with a thickness of ~10 nm) by wide-band Z-scan measurement technique, and anticipated that multi-layer BPs could be developed as another new type of two-dimensional saturable absorber with operation bandwidth ranging from the visible (400 nm) towards mid-IR (at least 1930 nm). Our results might suggest that ultra-thin multi-layer BP films could be potentially developed as broadband ultra-fast photonics devices, such as passive Q-switcher, mode-locker, optical switcher etc.

Evidence of extended cation solubility in atomic layer deposited nanocrystalline BaTiO3 thin films and its strong impact on the electrical properties.

PubMed

Falmbigl, Matthias; Karateev, Igor A; Golovina, Iryna S; Plokhikh, Aleksandr V; Parker, Thomas C; Vasiliev, Alexander L; Spanier, Jonathan E

2018-06-22

Thin films of ≈50 nm thickness with Ba/Ti-ratios ranging from 0.8 to 1.06 were prepared by depositing alternating layers of Ba(OH)2 and TiO2. Annealing at 750 °C promoted the solid-solid transformation into polycrystalline BaTiO3 films containing a mixture of the perovskite and the hexagonal polymorphs with average crystallite sizes smaller than 14 nm and without impurity phases. This, together with an increase of the cubic lattice parameters for Ba-rich films, suggests an extended metastable solubility range for the perovskite-phase in these nanocrystalline thin films on both sides of the stoichiometric composition. Mapping of the cation distribution utilizing energy-filtered transmission electron microscopy corroborates defect accommodation within the BaTiO3 grains. While the cation off-stoichiometry in thermodynamic equilibrium is negligible for BaTiO3, the metastable extended solubility range in the thin films can be directly correlated to the low annealing temperature and nanocrystalline nature. The leakage current behavior can be explained by the formation of Schottky defects for nonstoichiometric films, and the cation ratio has a distinct impact on the dielectric properties: while excess-BaO has a marginal detrimental effect on the permittivity, the dielectric constant declines rapidly by more than 50% towards the Ti-rich side. The present findings highlight the importance of compositional control for the synthesis of nanocrystalline BaTiO3 thin films, in particular for low annealing and/or deposition temperatures. Our synthesis approach using alternating layers of Ba(OH)2 and TiO2 provides a route to precisely control the cation stoichiometry.

Structural and optical properties of PbS thin films grown by chemical bath deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seghaier, S.; Kamoun, N.; Guasch, C.

2007-09-19

Lead sulphide thin films are grown on glass substrates at various deposition times tD, in the range of 40-60 min per step of 2 min, using the chemical bath deposition technique. X-ray diffraction and atomic force microscopy are used to characterize the film structure. The surface composition is analysed by Auger electron spectroscopy. It appears that the as-prepared thin films are polycrystalline with cubic structure. Nanometric scale crystallites are uniformly distributed on the surface. They exhibit almost a stoechiometric composition with a [Pb]/[S] ratio equal to 1.10. Optical properties are studied in the range of 300-3300 nm by spectrophotometric measurements.more » Analysis of the optical absorption data of lead sulphide thin layers reveals a narrow optical direct band gap equal to 0.46 eV for the layer corresponding to a deposition time equal to 60 min.« less

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

Improvement of perpendicular anisotropy of columnar FePt-ZrO2-C films with FePt insert layer

NASA Astrophysics Data System (ADS)

Dong, Kaifeng; Mo, Wenqin; Jin, Fang; Song, Junlei; Cheng, Weimin; Wang, Haiwei

2018-05-01

The effects of various thicknesses of FePt insert layer on the microstructure and magnetic properties of FePt-ZrO2-C thin films have been investigated. It is found that with inserting 0.4 nm FePt films between the TiON intermediate layer and FePt-ZrO2-C layer, the perpendicular anisotropy indicated by Hc⊥/Hc//ratio would increase from 4 to 13.1, suggesting the perpendicular anisotropy could be improved a lot with using FePt insert layer. Simultaneously, the FePt grains of FePt-ZrO2-C thin films maintained columnar structure and the grain isolation could also be improved in a certain degree. With further increase of the FePt insert layer thickness, although the perpendicular anisotropy was still larger than that without FePt insert layer, the grain size of the FePt-ZrO2-C films would increase and the isolation would be deteriorated.

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun

2016-12-01

For epitaxial films, a critical thickness (t c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3/SrRuO 3/SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficientmore » of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.« less

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

PubMed Central

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-01-01

For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling. PMID:27929103

TiO2 as diffusion barrier at Co/Alq3 interface studied by x-ray standing wave technique

NASA Astrophysics Data System (ADS)

Phatak Londhe, Vaishali; Gupta, A.; Ponpandian, N.; Kumar, D.; Reddy, V. R.

2018-06-01

Nano-scale diffusion at the interfaces in organic spin valve thin films plays a vital role in controlling the performance of magneto-electronic devices. In the present work, it is shown that a thin layer of titanium dioxide at the interface of Co/Alq3 can act as a good diffusion barrier. The buried interfaces of Co/Alq3/Co organic spin valve thin film has been studied using x-ray standing waves technique. A planar waveguide is formed with Alq3 layer forming the cavity and Co layers as the walls of the waveguide. Precise information about diffusion of Co into Alq3 is obtained through excitation of the waveguide modes. It is found that the top Co layer diffuses deep into the Alq3 resulting in incorporation of 3.1% Co in the Alq3 layer. Insertion of a 1.7 nm thick barrier layer of TiO2 at Co/Alq3 interface results in a drastic reduction in the diffusion of Co into Alq3 to a value of only 0.4%. This suggests a better performance of organic spin valve with diffusion barrier of TiO2.

Low temperature thin films formed from nanocrystal precursors

DOEpatents

Alivisatos, A. Paul; Goldstein, Avery N.

1993-01-01

Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.

Low temperature thin films formed from nanocrystal precursors

DOEpatents

Alivisatos, A.P.; Goldstein, A.N.

1993-11-16

Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000 K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure. 9 figures.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

NASA Astrophysics Data System (ADS)

Muthusubramanian, N.; Galan, E.; Maity, C.; Eelkema, R.; Grozema, F. C.; van der Zant, H. S. J.

2016-07-01

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al2O3 thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10-4 G0 (1 G0 = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were used to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.

Using a delta-doped CCD to determine the energy of a low-energy particle

NASA Technical Reports Server (NTRS)

Nikzad, Shouleh (Inventor); Croley, Donald R. (Inventor); Murphy, Gerald B. (Inventor)

2001-01-01

The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.

Delta-doped CCD's as low-energy particle detectors and imagers

NASA Technical Reports Server (NTRS)

Nikzad, Shouleh (Inventor); Hoenk, Michael E. (Inventor); Hecht, Michael H. (Inventor)

2002-01-01

The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, S. A.; Tang, M. H., E-mail: mhtang@xtu.edu.cn, E-mail: lizheng@xtu.edu.cn; Xiao, Y. G.

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to {sup 60}Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Design and analysis of a low actuation voltage electrowetting-on-dielectric microvalve for drug delivery applications.

PubMed

Samad, Mst Fateha; Kouzani, Abbas Z

2014-01-01

This paper presents a low actuation voltage microvalve with optimized insulating layers that manipulates a conducting ferro-fluid droplet by the principle of electrowetting-on-dielectric (EWOD). The proposed EWOD microvalve contains an array of chromium (Cr) electrodes on the soda-lime glass substrate, covered by both dielectric and hydrophobic layers. Various dielectric layers including Su-8 2002, Polyvinylidenefluoride (PVDF) and Cyanoethyl pullulan (CEP), and thin (50 nm) hydrophobic Teflon and Cytonix are used to analyze the EWOD microvalves at different voltages. The Finite Element Method (FEM) based software, Coventorware is used to carry out the simulation analysis. It is observed that the EWOD microvalve having a CEP dielectric layer with dielectric constant of about 20 and thickness of 1 μm, and a Cytonix hydrophobic layer with thickness of 50 nm operated the conducting ferro-fluid droplet at the actuation voltage as low as 7.8 V.

Influence of magnesium fluoride (MgF2) layer on a conventional surface plasmon resonance sensor

NASA Astrophysics Data System (ADS)

Mohapatra, Saswat; Moirangthem, Rakesh S.

2018-05-01

In this work, a numerical study of Surface Plasmon Resonance (SPR) sensor has been done by using Magnesium Fluoride (MgF2) layer on a conventional Kretschmann configuration. The prism was coated with smooth gold thin film of thickness 50 nm followed by MgF2 layer. To obtain the maximum reflection dips in the SPR modes, the thickness of MgF2 layer is optimized by varying it from 200-800 nm. Our calculations also reveal that SPR modes corresponding to gold-MgF2 layer are very sensitive to the changes in the surrounding medium as compared to the traditional SPR device. The sensing performance of the proposed nano-plasmonic sensor is theoretically calculated using bulk refractive index sensing. Such bilayer device (gold-MgF2) is expected to take an important role on the field of chemical and biological sensing.

Reducing adhesion energy of micro-relay electrodes by ion beam synthesized oxide nanolayers

DOE PAGES

Saha, Bivas; Peschot, Alexis; Osoba, Benjamin; ...

2017-03-09

Reduction in the adhesion energy of contacting metal electrode surfaces in nano-electro-mechanical switches is crucial for operation with low hysteresis voltage. We demonstrate that by forming thin layers of metal-oxides on metals such as Ru and W, the adhesion energy can be reduced by up to a factor of ten. We employ a low-energy ion-beam synthesis technique and subsequent thermal annealing to form very thin layers (~2 nm) of metal-oxides (such as RuO 2 and WO x) on Ru and W metal surfaces and quantify the adhesion energy using an atomic force microscope with microspherical tips.

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

NASA Astrophysics Data System (ADS)

Cho, Sung Woon; Yun, Myeong Gu; Ahn, Cheol Hyoun; Kim, So Hee; Cho, Hyung Koun

2015-03-01

Zinc oxide (ZnO)-based bi-layers, consisting of ZnO and Al-doped ZnO (AZO) layers grown by atomic layer deposition, were utilized as the channels of oxide thin-film transistors (TFTs). Thin AZO layers (5 nm) with different Al compositions (5 and 14 at. %) were deposited on top of and beneath the ZnO layers in a bi-layer channel structure. All of the bi-layer channel TFTs that included the AZO layers showed enhanced stability (Δ V Th ≤ 3.2 V) under a positive bias stress compared to the ZnO single-layer channel TFT (Δ V Th = 4.0 V). However, the AZO/ZnO bi-layer channel TFTs with an AZO interlayer between the gate dielectric and the ZnO showed a degraded field effect mobility (0.3 cm2/V·s for 5 at. % and 1.8 cm2/V·s for 14 at. %) compared to the ZnO single-layer channel TFT (5.5 cm2/V·s) due to increased scattering caused by Al-related impurities near the gate dielectric/channel interface. In contrast, the ZnO/AZO bi-layer channel TFTs with an AZO layer on top of the ZnO layer exhibited an improved field effect mobility (7.8 cm2/V·s for 14 at. %) and better stability. [Figure not available: see fulltext.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

PubMed

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

A colorimetric sensor based on anodized aluminum oxide (AAO) substrate for the detection of nitroaromatics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Y.; Wang, H. H.; Indacochea, J. E.

2011-12-15

Simple and low cost colorimetric sensors for explosives detection were explored and developed. Anodized aluminum oxide (AAO) with large surface area through its porous structure and light background color was utilized as the substrate for colorimetric sensors. Fabricated thin AAO films with thickness less than {approx} 500 nm allowed us to observe interference colors which were used as the background color for colorimetric detection. AAO thin films with various thickness and pore-to-pore distance were prepared through anodizing aluminum foils at different voltages and times in dilute sulfuric acid. Various interference colors were observed on these samples due to their differencemore » in structures. Accordingly, suitable anodization conditions that produce AAO samples with desired light background colors for optical applications were obtained. Thin film interference model was applied to analyze the UV-vis reflectance spectra and to estimate the thickness of the AAO membranes. We found that the thickness of produced AAO films increased linearly with anodization time in sulfuric acid. In addition, the growth rate was higher for AAO anodized using higher voltages. The thin film interference formulism was further validated with a well established layer by layer deposition technique. Coating poly(styrene sulfonate) sodium salt (PSS) and poly(allylamine hydrochloride) (PAH) layer by layer on AAO thin film consistently shifted its surface color toward red due to the increase in thickness. The red shift of UV-vis reflectance was correlated quantitatively to the number of layers been assembled. This sensitive red shift due to molecular attachment (increase in thickness) on AAO substrate was applied toward nitroaromatics detection. Aminopropyltrimethoxysilane (APTS) which can be attached onto AAO nanowells covalently through silanization and attract TNT molecules was coated and applied for TNT detection. UV-vis spectra of AAO with APTS shifted to the longer wavelength side due to TNT attachment. This red shift implied AAO thickness increased and positive detection of TNT molecules. It was also observed that both APTS and polyethyleneimine (PEI) were electron rich polymers which formed Meisenheimer complexes with TNT in solution and changed its color abruptly. This strong color change due to chemical reaction was applied as another approach for direct TNT detection. Commercial AAO films with long pores (60 {mu}m) and white background color were coated with APTS or PEI and then exposed to TNT in solution. These membranes turned to pink rapidly and eventually became visibly orange after a few hours with a strong absorption around 500 nm that was consistent with the formation of Meisenheimer complexes. The visible color change can be observed by unaided eyes and is suitable for nitroaromatics detection at higher concentration while interference color red shift in AAO thin film is designed for nitroaromatics detection at monolayer (nm) level.« less

Mechanical behavior of Ti-Ta-based surface alloy fabricated on TiNi SMA by pulsed electron-beam melting of film/substrate system

NASA Astrophysics Data System (ADS)

Meisner, S. N.; Yakovlev, E. V.; Semin, V. O.; Meisner, L. L.; Rotshtein, V. P.; Neiman, A. A.; D'yachenko, F.

2018-04-01

The physical-mechanical properties of the Ti-Ta based surface alloy with thickness up to ∼2 μm fabricated through the multiple (up to 20 cycles) alternation of magnetron deposition of Ti70Ta30 (at.%) thin (50 nm) films and their liquid-phase mixing with the NiTi substrate by microsecond low-energy, high current pulsed electron beam (LEHCPEB: ≤15 keV, ∼2 J/cm2) are presented. Two types of NiTi substrates (differing in the methods of melting alloys) were pretreated with LEHCPEB to improve the adhesion of thin-film coating and to protect it from local delimitation because of the surface cratering under pulsed melting. The methods used in the research include nanoindentation, transmission electron microscopy, and depth profile analysis of nanohardness, Vickers hardness, elastic modulus, depth recovery ratio, and plasticity characteristic as a function of indentation depth. For comparison, similar measurements were carried out with NiTi substrates in the initial state and after LEHCPEB pretreatment, as well as on "Ti70Ta30(1 μm) coating/NiTi substrate" system. It was shown that the upper surface layer in both NiTi substrates is the same in properties after LEHCPEB pretreatment. Our data suggest that the type of multilayer surface structure correlates with its physical-mechanical properties. For NiTi with the Ti-Ta based surface alloy ∼1 μm thick, the highest elasticity falls on the upper submicrocrystalline layer measuring ∼0.2 μm and consisting of two Ti-Ta based phases: α‧‧ martensite (a = 0.475 nm, b = 0.323 nm, c = 0.464 nm) and β austenite (a = 0.327 nm). Beneath the upper layer there is an amorphous sublayer followed by underlayers with coarse (>20 nm) and fine (<20 nm) average grain sizes which provide a gradual transition of the mechanical parameters to the values of the NiTi substrate.

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tay, Roland Yingjie; Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798; Tsang, Siu Hon

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random andmore » uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.« less

Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (˜550 cm2/V s)

NASA Astrophysics Data System (ADS)

Xu, Chang; Gao, Hongmiao; Sugino, Takayuki; Miyao, Masanobu; Sadoh, Taizoh

2018-06-01

High-speed thin-film transistors (TFTs) are required to develop the next generation of electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, high-carrier-mobility semiconductor films on insulator structures should be fabricated with low-temperature processing conditions (≤500 °C). To achieve this, we investigate solid-phase crystallization of amorphous-GeSn (a-GeSn) films (Sn concentration: 2% and thickness: 50-200 nm) on insulating substrates, where thin a-Si under-layers (thickness: 0-20 nm) are introduced between a-GeSn films and insulating substrates. The GeSn films are polycrystallized by annealing (450 °C, 20 h) for all samples irrespective of a-GeSn and a-Si thickness conditions, while the Si films remain amorphous. Analysis of crystal structures of GeSn films (thickness: 50 nm) reveals that grain sizes decrease from ˜10 μm to 2-3 μm by the introduction of a-Si under-layers (thickness: 3-20 nm). This phenomenon is attributed to the change in dominant nucleation sites from the interface to the bulk, which significantly decreases grain-boundary scattering of carriers through a decrease in the barrier heights at grain boundaries. Bulk-nucleation further becomes dominant by increasing the GeSn film thickness. As a result, a high carrier mobility of ˜550 cm2/V s is realized for GeSn films (thickness: 100 nm) grown with a-Si under-layers. This mobility is the largest among ever reported data for Ge and GeSn grown on an insulator. This technique will facilitate realization of high-speed TFTs for use in the next generation of electronics.

Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Sun Ho; Lee, Kee Sun; Green Home Energy Technology Center, Cheonan City

Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showedmore » 0.08 of the emissivity, including {approx}61% of the transmittance in the visible region (wavelength: 550 nm).« less

Phase Competition Induced Bio-Electrochemical Resistance and Bio-Compatibility Effect in Nanocrystalline Zr x -Cu100-x Thin Films.

PubMed

Badhirappan, Geetha Priyadarshini; Nallasivam, Vignesh; Varadarajan, Madhuri; Leobeemrao, Vasantha Priya; Bose, Sivakumar; Venugopal, Elakkiya; Rajendran, Selvakumar; Angleo, Peter Chrysologue

2018-07-01

Nano-crystalline Zrx-Cu100-x (x = 20-100 at.%) thin films with thickness ranging from 50 to 185 nm were deposited by magnetron co-sputtering with individual Zr and Cu targets. The as-sputtered thin films were characterized by Field Emission Scanning Electron Microscope (FE-SEM), Atomic Force Microscopy (AFM) and Glancing Incidence X-ray Diffraction (GIXRD) for structural and morphological properties. The crystallite size was found to decrease from 57 nm to 37 nm upon increasing the Zr content from 20 to 30 at.% with slight increase in the lattice strain from 0.17 to 0.33%. Further, increase in Zr content to 40 at.% leads to increase in the crystallite size to 57 nm due to stabilization of C10Zr7 phase along with the presence of nanocrystalline Cu-Zr phase. A bimodal distribution of grain size was observed from FE-SEM micrograph was attributed to the highest surface roughness in Zr30Cu70 thin films comprised of Cu10Zr7, Cu9Zr2, Cu-Zr intermetallic phases. In-vitro electrochemical behaviors of nano-crystalline Zrx-Cu100-x thin films in simulated body fluid (SBF) were investigated using potentiodynamic polarization studies. Electrochemical impedance spectroscopy (EIS) data fitting by equivalent electrical circuit fit model suggests that inner bulk layer contributes to high bio-corrosion resistance in Zrx-Cu100-x thin films with increase in Zr content. The results of cyto-compatibility assay suggested that Zr-Cu thin film did not introduce cytotoxicity to osteoblast cells, indicating its suitability as a bio-coating for minimally invasive medical devices.

Work function of few layer graphene covered nickel thin films measured with Kelvin probe force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eren, B.; Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Gysin, U.

2016-01-25

Few layer graphene and graphite are simultaneously grown on a ∼100 nm thick polycrystalline nickel film. The work function of few layer graphene/Ni is found to be 4.15 eV with a variation of 50 meV by local measurements with Kelvin probe force microscopy. This value is lower than the work function of free standing graphene due to peculiar electronic structure resulting from metal 3d-carbon 2p(π) hybridization.

Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Pai, Chi-Feng; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

2016-10-01

We report measurements of the thickness and temperature (T ) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and Hf Ox/MgO ) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

Thin Film Coating with Highly Dispersible Barium Titanate-Polyvinylpyrrolidone Nanoparticles.

PubMed

Li, Jinhui; Inukai, Koji; Takahashi, Yosuke; Tsuruta, Akihiro; Shin, Woosuck

2018-05-01

Thin BaTiO₃ (BT) coating layers are required in various multilayer ceramic technologies, and fine nanosized BT particles with good dispersion in solution are essential for this coating process. In this work, cubic and tetragonal phase monodispersed BT nanoparticles—which were referred to as LBT and HBT-PVP coated on their surface by polyvinylpyrrolidone (PVP) polymer—were prepared by low temperature synthesis (LTS) and hydrothermal method (HT) at 80 and 230 °C, respectively. They were applied for the thin film coating on polyethylene terephthalate (PET) and Si wafer substrates by a simple bar coating. The thickness of BT, LBT-PVP, and HBT-PVP films prepared by their 5 wt % coating agent on Si are around 268, 308, and 263 nm, and their surface roughness are 104.6, 91.6, and 56.1 nm, respectively. The optical transmittance of BT, LBT-PVP, and HBT-PVP films on PET are 55, 66, and 73% at 550 nm wavelength and the haze values are 34.89, 24.70, and 20.53% respectively. The mechanism of dispersant adsorbed on the BT surface for densification of thin film during the drying process of the film was discussed.

Thin Film Coating with Highly Dispersible Barium Titanate-Polyvinylpyrrolidone Nanoparticles

PubMed Central

Li, Jinhui; Inukai, Koji; Takahashi, Yosuke; Tsuruta, Akihiro; Shin, Woosuck

2018-01-01

Thin BaTiO3 (BT) coating layers are required in various multilayer ceramic technologies, and fine nanosized BT particles with good dispersion in solution are essential for this coating process. In this work, cubic and tetragonal phase monodispersed BT nanoparticles—which were referred to as LBT and HBT-PVP coated on their surface by polyvinylpyrrolidone (PVP) polymer—were prepared by low temperature synthesis (LTS) and hydrothermal method (HT) at 80 and 230 °C, respectively. They were applied for the thin film coating on polyethylene terephthalate (PET) and Si wafer substrates by a simple bar coating. The thickness of BT, LBT-PVP, and HBT-PVP films prepared by their 5 wt % coating agent on Si are around 268, 308, and 263 nm, and their surface roughness are 104.6, 91.6, and 56.1 nm, respectively. The optical transmittance of BT, LBT-PVP, and HBT-PVP films on PET are 55, 66, and 73% at 550 nm wavelength and the haze values are 34.89, 24.70, and 20.53% respectively. The mechanism of dispersant adsorbed on the BT surface for densification of thin film during the drying process of the film was discussed. PMID:29724007

PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.

The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

Antidot patterned single and bilayer thin films based on ferrimagnetic Tb-Co alloy with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Kulesh, N. A.; Vázquez, M.; Lepalovskij, V. N.; Vas'kovskiy, V. O.

2018-02-01

Hysteresis properties and magnetization reversal in TbCo(30 nm) and FeNi(10 nm)/TbCo(30 nm) films with nanoscale antidot lattices are investigated to test the effect of nanoholes on the perpendicular anisotropy in the TbCo layer and the induced exchange bias in the FeNi layer. The antidots are introduced by depositing the films on top of hexagonally ordered porous anodic alumina substrates with pore diameter and interpore distance fixed to 75 nm and 105 nm, respectively. The analysis of combined vibrating sample magnetometry, Kerr microscopy and magnetic force microscopy imaging measurements has allowed us to link macroscopic and local magnetization reversal processes. For magnetically hard TbCo films, we demonstrate the tunability of magnetic anisotropy and coercive field (i.e., it increases from 0.2 T for the continuous film to 0.5 T for the antidot film). For the antidot FeNi/TbCo film, magnetization of FeNi is confirmed to be in plane. Although an exchange bias has been locally detected in the FeNi layer, the integrated hysteresis loop has increased coercivity and zero shift along the field axis due to the significantly decreased magnetic anisotropy of TbCo layer.

A micro oxygen sensor based on a nano sol-gel TiO2 thin film.

PubMed

Wang, Hairong; Chen, Lei; Wang, Jiaxin; Sun, Quantao; Zhao, Yulong

2014-09-03

An oxygen gas microsensor based on nanostructured sol-gel TiO2 thin films with a buried Pd layer was developed on a silicon substrate. The nanostructured titania thin films for O2 sensors were prepared by the sol-gel process and became anatase after heat treatment. A sandwich TiO2 square board with an area of 350 μm × 350 μm was defined by both wet etching and dry etching processes and the wet one was applied in the final process due to its advantages of easy control for the final structure. A pair of 150 nm Pt micro interdigitated electrodes with 50 nm Ti buffer layer was fabricated on the board by a lift-off process. The sensor chip was tested in a furnace with changing the O2 concentration from 1.0% to 20% by monitoring its electrical resistance. Results showed that after several testing cycles the sensor's output becomes stable, and its sensitivity is 0.054 with deviation 2.65 × 10(-4) and hysteresis is 8.5%. Due to its simple fabrication process, the sensor has potential for application in environmental monitoring, where lower power consumption and small size are required.

Stretchable, adhesive and ultra-conformable elastomer thin films.

PubMed

Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

2016-11-16

Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

Novel approach for III-N on Si (111) templates fabrication by low-temperature PA MBE using porous Si layer

NASA Astrophysics Data System (ADS)

Zolotukhin, D.; Seredin, P.; Lenshin, A.; Goloshchapov, D.; Mizerov, A.

2017-11-01

We report on successful growth of GaN nanorods by low-temperature plasma-assisted molecular beam epitaxy on a Si(111) substrate with and without preformed thin porous Si layer (por-Si). The deposited GaN initially forms islands which act as a seed for the wires. Porous structure of the por-Si layer helps to control nucleation islands sizes and achieve homogeneous distribution of the nanorods diameters. In addition 850 nm-thick crack-free GaN layer was formed on Si(111) substrate with preformed por-Si layer.

Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method

NASA Astrophysics Data System (ADS)

Salodkar, R. V.; Belkhedkar, M. R.; Nemade, S. D.

2018-05-01

Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO2 thin film of thickness 91 nm onto glass substrates using ZrOCl2.8H2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO2 thin film. The direct optical band gap and activation energy of the ZrO2 thin film are found to be 4.74 and 0.80eV respectively.

Fabrication of ordered bulk heterojunction organic photovoltaic cells using nanopatterning and electrohydrodynamic spray deposition methods.

PubMed

Park, Sung-Eun; Kim, Sehwan; Kim, Kangmin; Joe, Hang-Eun; Jung, Buyoung; Kim, Eunkyoung; Kim, Woochul; Min, Byung-Kwon; Hwang, Jungho

2012-12-21

Organic photovoltaic cells with an ordered heterojunction (OHJ) active layer are expected to show increased performance. In the study described here, OHJ cells were fabricated using a combination of nanoimprinting and electrohydrodynamic (EHD) spray deposition methods. After an electron donor material was nanoimprinted with a PDMS stamp (valley width: 230 nm, period: 590 nm) duplicated from a Si nanomold, an electron acceptor material was deposited onto the nanoimprinted donor layer using an EHD spray deposition method. The donor-acceptor interface layer was observed by obtaining cross-sectional images with a focused ion beam (FIB) microscope. The photocurrent generation performance of the OHJ cells was evaluated with the current density-voltage curve under air mass (AM) 1.5 conditions. It was found that the surface morphology of the electron acceptor layer affected the current and voltage outputs of the photovoltaic cells. When an electron acceptor layer with a smooth thin (250 nm above the valley of the electron donor layer) surface morphology was obtained, power conversion efficiency was as high as 0.55%. The electrohydrodynamic spray deposition method used to produce OHJ photovoltaic cells provides a means for the adoption of large area, high throughput processes.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

NASA Astrophysics Data System (ADS)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

NASA Astrophysics Data System (ADS)

Čermák, Jan; Koide, Yasuo; Takeuchi, Daisuke; Rezek, Bohuslav

2014-02-01

Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

Stable azodye photo-alignment layer for liquid crystal devices achieved by "turning off" dye photosensitivity

NASA Astrophysics Data System (ADS)

McGinty, C.; Finnemeyer, V.; Reich, R.; Clark, H.; Berry, S.; Bos, P.

2017-11-01

We have previously proposed a low cost, versatile process for stabilizing azodye photo-alignment layers for liquid crystal devices by utilizing a surface localized reactive mesogen (RM) layer. The RM is applied by dissolving the monomer in a liquid crystal material prior to filling the cell. In this paper, we show the significant effect of azodye layer thickness on the long term stability of these alignment layers when exposed to polarized light. We demonstrate, surprisingly, that thin azodye layers (˜3 nm) provide improved stability over thicker (˜40 nm) layers. Using this process, we show cells which have been stable to exposure with polarized light through one month. Additionally, we demonstrate the use of a photo-alignment layer to align the liquid crystals that afterwards can be rendered insensitive to polarized light. This was accomplished by using the process described above with the additional step of eliminating the photosensitivity of the azodye layer through photo-bleaching; the result is an RM alignment layer that will be stable when exposed to polarized light in the dye absorption band.

Optimum deposition conditions of ultrasmooth silver nanolayers

PubMed Central

2014-01-01

Reduction of surface plasmon-polariton losses due to their scattering on metal surface roughness still remains a challenge in the fabrication of plasmonic devices for nanooptics. To achieve smooth silver films, we study the dependence of surface roughness on the evaporation temperature in a physical vapor deposition process. At the deposition temperature range 90 to 500 K, the mismatch of thermal expansion coefficients of Ag, Ge wetting layer, and sapphire substrate does not deteriorate the metal surface. To avoid ice crystal formation on substrates, the working temperature of the whole physical vapor deposition process should exceed that of the sublimation at the evaporation pressure range. At optimum room temperature, the root-mean-square (RMS) surface roughness was successfully reduced to 0.2 nm for a 10-nm Ag layer on sapphire substrate with a 1-nm germanium wetting interlayer. Silver layers of 10- and 30-nm thickness were examined using an atomic force microscope (AFM), X-ray reflectometry (XRR), and two-dimensional X-ray diffraction (XRD2). PACS 63.22.Np Layered systems; 68. Surfaces and interfaces; thin films and nanosystems (structure and nonelectronic properties); 81.07.-b Nanoscale materials and structures: fabrication and characterization PMID:24685115

Junctionless tri-gate InGaAs MOSFETs

NASA Astrophysics Data System (ADS)

Zota, Cezar B.; Borg, Mattias; Wernersson, Lars-Erik; Lind, Erik

2017-12-01

We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 × 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 × 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mS/µm and I ON = 160 µA/µm (at I OFF = 100 nA/µm and V DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer.

Optoelectric biosensor using indium-tin-oxide electrodes.

PubMed

Choi, Chang Kyoung; Kihm, Kenneth D; English, Anthony E

2007-06-01

The use of an optically thin indium-tin-oxide (ITO) electrode is presented for an optoelectric biosensor simultaneously recording optical images and microimpedance to examine time-dependent cellular growth. The transmittance of a 100 nm thick ITO electrode layer is approximately the same as the transmittance of a clean glass substrate, whereas the industry-standard Au(47.5 nm)/Ti(2.5 nm) electrode layer drops the transmittance to less than 10% of that of the glass substrate. The simultaneous optoelectric measurements permit determining the correlation of the cell-covered area increase with the microimpedance increase, and the example results obtained for live porcine pulmonary artery endothelial cells delineate the quantitative and comprehensive nature of cellular attachment and spreading to the substrate, which has not been clearly perceived before.

Copper:molybdenum sub-oxide blend as transparent conductive electrode (TCE) indium free

NASA Astrophysics Data System (ADS)

Hssein, Mehdi; Cattin, Linda; Morsli, Mustapha; Addou, Mohammed; Bernède, Jean-Christian

2016-05-01

Oxide/metal/oxide structures have been shown to be promising alternatives to ITO. In such structures, in order to decrease the high light reflection of the metal film it is embedded between two metal oxides dielectric. MoO3-x is often used as oxide due to its capacity to be a performing anode buffer layer in organic solar cells, while silver is the metal the most often used [1]. Some attempts to use cheaper metal such as copper have been done. However it was shown that Cu diffuses strongly into MoO3-x [2]. Here we used this property to grow simple new transparent conductive oxide (TCE), i.e., Cu: MoO3-x blend. After the deposition of a thin Cu layer, a film of MoO3-x is deposited by sublimation. An XPS study shows more than 50% of Cu is present at the surface of the structure. In order to limit the Cu diffusion an ultra-thin Al layer is deposited onto MoO3-x. Then, in order to obtain a good hole collecting contact with the electron donor of the organic solar cells, a second MoO3-x layer is deposited. After optimization of the thickness of the different layers, the optimum structure is as follow: Cu (12 nm) : MoO3-x (20 nm)/Al (0.5 nm)/ MoO3-x (10 nm). The sheet resistance of this structure is Rsq = 5.2 Ω/sq. and its transmittance is Tmax = 65%. The factor of merit ϕM = T10/Rsq. = 2.41 × 10-3 Ω-1, which made this new TCE promising as anode in organic solar cells. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

How many molecular layers of polar solvent molecules control chemistry? The concept of compensating dipoles.

PubMed

Langhals, Heinz; Braun, Patricia; Dietl, Christian; Mayer, Peter

2013-09-27

The extension of the solvent influence of the shell into the volume of a polar medium was examined by means of anti-collinear dipoles on the basis of the E(T)(30) solvent polarity scale (i.e., the molar energy of excitation of a pyridinium-N-phenolatebetaine dye; generally: E(T) =28,591 nm kcal mol(-1)/λmax) where no compensation effects were found. As a consequence, solvent polarity effects are concentrated to a very thin layer of a few thousand picometres around the solute where extensions into the bulk solvent become unimportant. A parallelism to the thin surface layer of water to the gas phase is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

NASA Astrophysics Data System (ADS)

Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

2014-08-01

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Spectral, thermal and optical-electrical properties of the layer-by-layer deposited thin film of nano Zn(II)-8-hydroxy-5-nitrosoquinolate complex.

PubMed

Haggag, Sawsan M S; Farag, A A M; Abdelrafea, Mohamed

2013-06-01

Zinc(II)-8-hydroxy-5-nitrosoquinolate, [Zn(II)-(HNOQ)2], was synthesized and assembled as a deposited thin film of nano-metal complex by a rapid, direct, simple and efficient procedure based on layer-by-layer chemical deposition technique. Stoichiometric identification and structural characterization of [Zn(II)-(HNOQ)2] were confirmed by electron impact mass spectrometry (EI-MS) and Fourier Transform infrared spectroscopy (FT-IR). Surface morphology was studied by using a scanning electron microscope imaging (SEM) and the particle size was found to be in the range of 23-49 nm. Thermal stability of [Zn(II)-(HNOQ)2] was studied and the thermal parameters were evaluated using thermal gravimetric analysis (TGA). The current density-voltage measurements showed that the current flow is dominated by a space charge limited and influenced by traps under high bias. The optical properties of [Zn(II)-(HNOQ)2] thin films were found to exhibit two direct allowed transitions at 2.4 and 1.0 eV, respectively. Copyright © 2013 Elsevier B.V. All rights reserved.

Soft x-ray imaging with incoherent sources

NASA Astrophysics Data System (ADS)

Wachulak, P.; Torrisi, A.; Ayele, M.; Bartnik, A.; Czwartos, J.; Wegrzyński, Ł.; Fok, T.; Parkman, T.; Vondrová, Š.; Turnová, J.; Odstrcil, M.; Fiedorowicz, H.

2017-05-01

In this work we present experimental, compact desk-top SXR microscope, the EUV microscope which is at this stage a technology demonstrator, and finally, the SXR contact microscope. The systems are based on laser-plasma EUV and SXR sources, employing a double stream gas puff target. The EUV and SXR full field microscopes, operating at 13.8 nm and 2.88 nm wavelengths, respectively, are capable of imaging nanostructures with a sub-50 nm spatial resolution with relatively short (seconds) exposure times. The SXR contact microscope operates in the "water-window" spectral range, to produce an imprint of the internal structure of the sample in a thin layer of SXR light sensitive photoresist. Applications of such desk-top EUV and SXR microscopes for studies of variety of different samples - test objects for resolution assessment and other objects such as carbon membranes, DNA plasmid samples, organic and inorganic thin layers, diatoms, algae and carcinoma cells, are also presented. Details about the sources, the microscopes as well as the imaging results for various objects will be presented and discussed. The development of such compact imaging systems may be important to the new research related to biological, material science and nanotechnology applications.

Polarization independent asymmetric light absorption in plasmonic nanostructure

NASA Astrophysics Data System (ADS)

Franco Rêgo, Davi; Rodriguez-Esquerre, Vitaly Felix

2017-08-01

The directional dependency of the optical coefficients, such as absorbance and reflectance, of a periodic hole plasmonic structure is numerically simulated and investigated. The tridimensional structure, which is composed of a metallic thin layer on a semiconductor matrix, is polarization independent and exhibits wide angle tolerance. It is found that the optical coefficients of the simulated structure have strong dependency to the radii of the holes due to cavity modes resonance and surface plasmon resonance. Simulations were carried out using gold and silver, varying the holes radii ranging from 40 to 70nm, as well as its depth, from 30 to 60nm of the metallic thin layer and from 100 to 200nm of the semiconductor matrix. A maximum contrast ratio of a unit was obtained. The resonant modes excited in the structure and excitation of surface plasmon polaritons in the metallic side illumination favors absorption, which explains the asymmetric behavior. We also investigate the structure's fabrication sensitivity by randomizing the generation of center of the holes in a supercell. These findings are significant for a diverse range of applications, ranging from optical integrated circuits to solar and thermovoltaics energy harvesting.

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

NASA Astrophysics Data System (ADS)

Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; Kaschieva, S.

2006-08-01

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×1013 el/cm2, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×1014 el/cm2 was observed.

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2016-10-01

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

Comparative measurements of piezoelectric coefficient of PZT films by Berlincourt, interferometer, and vibrometer methods.

PubMed

Huang, Zhaorong; Zhang, Qi; Corkovic, Silvana; Dorey, Robert; Whatmore, Roger W

2006-12-01

Chemical solution deposition (CSD) techniques were used to prepare lead zirconate (Zr) titanate (Ti) (PZT) thin films with Zr/Ti ratios of 30/70 and 52/48. Usually CSD processing is restricted to making crack-free, single-layer films of 70-nm thick, but modifications to the sol-gel process have permitted the fabrication of dense, crack-free, single layers up to 200 to 300 nm thick, which can be built-up into layers up to 3-microm thick. Thicker PZT films (> 2-microm single layer) can be produced by using a composite sol-gel/ceramic process. Knowledge of the electroactive properties of these materials is essential for modeling and design of novel micro-electromechanical systems (MEMS) devices, but accurate measurement of these properties is by no means straightforward. A novel, double-beam, common-path laser interferometer has been developed to measure the longitudinal (d33) piezoelectric coefficient in films; the results were compared with the values obtained by Berlin-court and laser scanning vibrometer methods. It was found that, for thin-film samples, the d(33,f) values obtained from the Berlincourt method are usually larger: than those obtained from the interferometer and the vibrometer methods; the reasons for this are discussed.

Domain and nanoridge growth kinetics in stratifying foam films

NASA Astrophysics Data System (ADS)

Zhang, Yiran; Sharma, Vivek

Ultrathin films exhibit stratification due to confinement-induced structuring and layering of small molecules in simple fluids, and of supramolecular structures like micelles, lipid layers and nanoparticles in complex fluids. Stratification proceeds by the formation and growth of thinner domains at the expense of surrounding thicker film, and results in formation of nanoscopic terraces and mesas within a film. The detailed mechanisms underlying stratification are still under debate, and are resolved in this contribution by addressing long-standing experimental and theoretical challenges. Thickness variations in stratifying films are visualized and analyzed using interferometry, digital imaging and optical microscopy (IDIOM) protocols, with unprecedented high spatial (thickness <100 nm, lateral 500 nm) and temporal resolution (<1 ms). Using IDIOM protocols we developed recently, we characterize the shape and the growth dynamics of nanoridges that flank the expanding domains in micellar thin films. We show that topographical changes including nanoridge growth, and the overall stratification dynamics, can be described quantitatively by nonlinear thin film equation, amended with supramolecular oscillatory surface forces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, Chih-Hao; Yue, Kan; Wang, Jing

Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit anmore » irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.« less

High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications

NASA Astrophysics Data System (ADS)

Huai, Yiming; Gan, Huadong; Wang, Zihui; Xu, Pengfa; Hao, Xiaojie; Yen, Bing K.; Malmhall, Roger; Pakala, Nirav; Wang, Cory; Zhang, Jing; Zhou, Yuchen; Jung, Dongha; Satoh, Kimihiro; Wang, Rongjun; Xue, Lin; Pakala, Mahendra

2018-02-01

High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (˜10 nm) with a tunnel magnetoresistance (TMR) ratio over 200% after high temperature back-end-of-line (BEOL) processing up to 400 °C. A thin reference layer with low magnetic moment and strong perpendicular magnetic anisotropy (PMA) is key to reduce the total thickness of the full pMTJ stack. We demonstrated strong interfacial PMA and a perpendicular Ruderman-Kittel-Kasuya-Yosida exchange interaction in the Co/Ir system. Owing to the additional high PMA at the Ir/Co interface in combination with a conventional CoFeB/MgO interface in the Ir/Co/Mo/CoFeB/MgO reference layer, the full film pMTJ showed a TMR ratio over 210% after annealing at 400 °C for 150 min. The high TMR ratio can be attributed to the thin stack design by combining a thin reference layer with the efficient compensation by a thin pinned layer. The annealing stability may be explained by the absence of solid solution in the Co-Ir system and the low oxygen affinity of Mo in the reference layer and the free layer. High device performance with a TMR ratio over 210% was also confirmed after subjecting the patterned devices to BEOL processing temperatures of up to 400 °C. This proposed pMTJ design is suitable for both standalone and embedded STT-MRAM applications.

Deposition and characterization of spray pyrolysed p-type Cu2SnS3 thin film for potential absorber layer of solar cell

NASA Astrophysics Data System (ADS)

Thiruvenkadam, S.; Sakthi, P.; Prabhakaran, S.; Chakravarty, Sujay; Ganesan, V.; Rajesh, A. Leo

2018-06-01

Thin film of ternary Cu2SnS3 (CTS), a potential absorber layer for solar cells was successfully deposited by chemical spray pyrolysis technique. The GIXRD pattern revealed that the film having tetragonal Cu2SnS3 phase with the preferential orientation along (112), (200), (220) and (312) plane and it is further confirmed using Raman spectroscopy by the existence of Raman peak at 320 cm-1. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 28.8 nm. The absorption coefficient was found to be greater than the order of 105 cm-1 and bandgap of 1.70 eV. Hall effect measurement indicates the p type nature of the film with a hole concentration of 1.03 × 1016cm-3 and a hall mobility of 404 cm2/V. The properties of CTS thin film confirmed suitable to be a potential absorber layer material for photovoltaic applications.

Rapid crystallization of WS2 films assisted by a thin nickel layer: An in situ energy-dispersive X-ray diffraction study

NASA Astrophysics Data System (ADS)

Ellmer, K.; Seeger, S.; Mientus, R.

2006-08-01

By rapid thermal crystallization of an amorphous WS3+x film, deposited by reactive magnetron sputtering at temperatures below 150 °C, layer-type semiconducting tungsten disulfide films (WS2) were grown. The rapid crystallization was monitored in real-time by in situ energy-dispersive X-ray diffraction. The films crystallize very fast (>40 nm/s), provided that a thin nickel film acts as nucleation seeds. Experiments on different substrates and the onset of the crystallization only at a temperature between 600 and 700 °C points to the decisive role of seeds for the textured growth of WS2, most probably liquid NiSx drops. The rapidly crystallized WS2 films exhibit a pronounced (001) texture with the van der Waals planes oriented parallel to the surface, leading to photoactive layers with a high hole mobility of about 80 cm2/Vs making such films suitable as absorbers for thin film solar cells.

Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

2018-05-01

We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

NASA Astrophysics Data System (ADS)

Li, Yi; Liu, Qi; Cai, Jing; Li, Yun; Shi, Yi; Wang, Xizhang; Hu, Zheng

2014-06-01

This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from -20.4 V to -0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

PubMed Central

Kocer, Hasan; Butun, Serkan; Palacios, Edgar; Liu, Zizhuo; Tongay, Sefaattin; Fu, Deyi; Wang, Kevin; Wu, Junqiao; Aydin, Koray

2015-01-01

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing. PMID:26294085

Glass transition in thin supported polystyrene films probed by temperature-modulated ellipsometry in vacuum.

PubMed

Efremov, Mikhail Yu; Kiyanova, Anna V; Last, Julie; Soofi, Shauheen S; Thode, Christopher; Nealey, Paul F

2012-08-01

Glass transition in thin (1-200 nm thick) spin-cast polystyrene films on silicon surfaces is probed by ellipsometry in a controlled vacuum environment. A temperature-modulated modification of the method is used alongside a traditional linear temperature scan. A clear glass transition is detected in films with thicknesses as low as 1-2 nm. The glass transition temperature (T(g)) shows no substantial dependence on thickness for coatings greater than 20 nm. Thinner films demonstrate moderate T(g) depression achieving 18 K for thicknesses 4-7 nm. Less than 4 nm thick samples are excluded from the T(g) comparison due to significant thickness nonuniformity (surface roughness). The transition in 10-20 nm thick films demonstrates excessive broadening. For some samples, the broadened transition is clearly resolved into two separate transitions. The thickness dependence of the glass transition can be well described by a simple 2-layer model. It is also shown that T(g) depression in 5 nm thick films is not sensitive to a wide range of experimental factors including molecular weight characteristics of the polymer, specifications of solvent used for spin casting, substrate composition, and pretreatment of the substrate surface.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolat, S., E-mail: bolat@ee.bilkent.edu.tr, E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800

We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3 nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3 V/decade. The entire TFT device fabrication process temperature is below 250 °C, which is the lowest process temperaturemore » reported for GaN based transistors, so far.« less

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

DTIC Science & Technology

2011-12-01

synthesis and texture analysis Sol-gel deposition and RF sputtering process was developed for deposition of PZT on Pt/Ti/Si02/Si (hereafter...well textured (i.e. with preferred crystalline orientation). To texture and obtain crack-free thick PZT RF films, we employed pre- treated substrates...and post-deposition annealing. One pre-treatment was the use of seed layer of textured PZT sol-gel thin film of thickness 65-85nm [1]. • Oean

Neutron flux spectrum revealed by Nb-based current-biased kinetic inductance detector with a 10B conversion layer

NASA Astrophysics Data System (ADS)

Miyajima, Shigeyuki; Shishido, Hiroaki; Narukami, Yoshito; Yoshioka, Naohito; Fujimaki, Akira; Hidaka, Mutsuo; Oikawa, Kenichi; Harada, Masahide; Oku, Takayuki; Arai, Masatoshi; Ishida, Takekazu

2017-01-01

We successfully derived the time-dependent flux of pulsed neutrons using a superconducting Nb-based current-biased kinetic inductance detector (CB-KID) with a 10B conversion layer at Japan Proton Accelerator Research Complex. Our CB-KID is a meander line made of a 40-nm-thick Nb thin film with 1 - μm line width, which is covered with a 150-nm-thick 10B conversion layer. The detector works at a temperature below 4 K. The evaluated detection efficiency of the CB-KID in this experiment is 0.23 % at the neutron energy of 25.4 meV. The time-dependent flux spectra of pulsed neutrons thus obtained are in good agreement with the results obtained by the Monte Carlo simulations.

Organic Light Emitting Diodes with Opal Photonic Crystal Layer and Carbon Nanotube Anode

NASA Astrophysics Data System (ADS)

Ovalle Robles, Raquel; Del Rocio Nava, Maria; Williams, Christopher; Zhang, Mei; Fang, Shaoli; Lee, Sergey; Baughman, Ray; Zakhidov, Anvar

2007-03-01

We report electroluminescence intensity and spectral changes in light emission from organic light emitting diode (OLEDs) structures, which have thin transparent films of opal photonic crystal (PC). The anode in such PC-OLED is laminated on opal layer from free standing optically transparent multiwall carbon nanotubes (T-CNT) sheets made by dry spinning from CVD grown forests. Silica and polystyrene opal films were grown on glass substrates by vertical sedimentation in colloids in thermal baths and the particle size of opal spheres ranges from 300 nm to 450 nm. The use of T-CNTs, (coated by PEDOT-PSS to avoid shorting) as hole injector, allows to eliminate the use of vacuum deposition of metals and permits to achieve tunneling hole injection regime from CNT tips into Alq^3 emission layer

Thermosensitive block copolymer [(PNIPAM)-b-(Glycine)] thin film as protective layer for drug loaded mesoporous silica nanoparticles

NASA Astrophysics Data System (ADS)

Amgoth, Chander; Joshi, Suman

2017-10-01

Synthesis and characterization of [(PNIPAM)-b-(Gly)] and mesoporous silica nanoparticles (MP-SiO2 NPs) were carried out separately and used to develop [(PNIPAM)-b-(Gly)]-(MP-SiO2 NPs). The synthesized MP-SiO2 NPs were meso porous in nature. The size of SiO2 NPs is in the range of ~180-250 nm (in diameter) with an average pore size of 2.8 nm within the particles. Interestingly, these mesoporous SiO2 NPs were loaded with anticancer drug (ITM-imatinib mesylate) fallow by the incubation for 24 h at RT. However, ITM loaded MP-SiO2 NPs were capped or covered with synthesized [(PNIPAM)-b-(Gly)] thin film. Here, thin film acts as protective layer for drug loaded MP-SiO2 NPs, with that leakage of drug molecules throughout its transport pathway can be avoided. Significantly, thermosensitive [(PNIPAM)-b-(Gly)] polymer thin film depletes at body temperature (~37 °C) and drug molecules come out from the pores of SiO2 NPs. However, developed [(PNIPAM)-b-(Gly)]-(MP-SiO2 NPs) is compatible and used for cell inhibition studies. After 24 h treatment, drug ITM released from [(PNIPAM)-b-(Gly)]-(MP-SiO2 NPs) shows significant (>90%) inhibition on leukemia blood cancer (K562) cells.

Plasmonic tuning of gold doped thin films for layers of photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gezgin, Serap Yiğit; Kepceoğlu, Abdullah; Bayır, Sercan

2016-03-25

In order to increase the absorption rates in solar cells, increasing research activities on the plasmonic nanostructures are followed carefully. The plasmonic nanoparticles provides an important enhancement in the trapping of photons in the active layer of the solar cells by means of interaction between incident light and plasmonic nanoparticles. In order to obtain this approach, under of 5×10{sup −4} mbar and 1×10{sup −2} mbar ambient argon gas pressure, gold thin film was deposited on the silicon substrate by applying PLD system. The morphology of thin films obtained was investigated by AFM and SEM considering the effect of Ar gas pressuremore » on the plasma plume. SPR peaks for Au nanoparticles deposited under 5×10{sup −4} mbar and 1×10{sup −2} mbar Ar gas pressure were observed at 756 nm and 658 nm wavelengths respectively. It has been stated that the SPR peak in the infrared is depend on the near field interaction between Au nanoparticles. Furthermore, when the pressure is increased to 1×10{sup −2} mbar Ar, it has been observed that the SPR peak for thin film is shifted towards to shorter wavelengths, and it has also been observed that the intensity of absorption peak is decreased.« less

Observation of Electron-Beam-Induced Phase Evolution Mimicking the Effect of the Charge–Discharge Cycle in Li-Rich Layered Cathode Materials Used for Li Ion Batteries

DOE PAGES

Lu, Ping; Yan, Pengfei; Romero, Eric; ...

2015-01-27

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Effect of Indium nano-sandwiching on the structural and optical performance of ZnSe films

NASA Astrophysics Data System (ADS)

Al Garni, S. E.; Qasrawi, A. F.

In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 μm, the thickness of the nanosandwiched Indium thin films was varied in the range of 25-100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs ∼70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50-100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains.

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers

PubMed Central

Peng, Kaung-Jay; Lin, Yung-Hsiang; Wu, Chung-Lun; Lin, Sheng-Fong; Yang, Chun-Yu; Lin, Shih-Meng; Tsai, Din-Ping; Lin, Gong-Ru

2015-01-01

The in-situ dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design. PMID:26328535

Single-crystal gallium nitride nanotubes.

PubMed

Goldberger, Joshua; He, Rongrui; Zhang, Yanfeng; Lee, Sangkwon; Yan, Haoquan; Choi, Heon-Jin; Yang, Peidong

2003-04-10

Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

NASA Astrophysics Data System (ADS)

Han, Xiao-Yan; Hou, Guo-Fu; Zhang, Xiao-Dan; Wei, Chang-Chun; Li, Gui-Jun; Zhang, De-Kun; Chen, Xin-Liang; Sun, Jian; Zhang, Jian-Jun; Zhao, Ying; Geng, Xin-Hua

2009-08-01

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μc-Si:H layers were prepared by using a different total gas flow rate (Ftotal), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ~ 1.0 nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μc-Si:H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J-V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300 sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5 Å/s (1 Å = 0.1 nm).

Ceramic membrane by tape casting and sol-gel coating for microfiltration and ultrafiltration application

NASA Astrophysics Data System (ADS)

Das, Nandini; Maiti, H. S.

2009-11-01

Alumina membrane filters in the form of thin (0.3-0.8 mm) discs of 25-30 mm diameter suitable for microfiltration application have been fabricated by tape-casting technique. Further using this microfiltration membrane as substrate, boehmite sol coating was applied on it and ultrafiltration membrane with very small thickness was formed. The pore size of the microfiltration membrane could be varied in the range of 0.1-0.7 μm through optimisation of experimental parameter. In addition, each membrane shows a very narrow pore size distribution. The most important factor, which determines the pore size of the membrane, is the initial particle size and its distribution of the ceramic powder. The top thin ultrafiltration, boehmite layer was prepared by sol-gel method, with a thickness of 0.5 μm. Particle size of the sol was approximately 30-40 nm. The structure and formation of the layer was analysed through TEM. At 550 °C formation of the top layer was completed. The pore size of the ultrafiltration membrane measured from TEM micrograph was almost 10 nm. Results of microbial (Escherichia coli—smallest-sized water-borne bacteria) test confirm the possibility of separation through this membrane

Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

NASA Astrophysics Data System (ADS)

Mehrabian, M.; Esteki, Z.; Shokrvash, H.; Kavei, G.

2016-10-01

Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2+ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2+ ion concentration was increased, which indicates that the acceptor level (of Cu2+) is getting close to the valence band of ZnS.

Thermally Diffused Al:ZnO Thin Films for Broadband Transparent Conductor.

PubMed

Tong, Chong; Yun, Juhyung; Chen, Yen-Jen; Ji, Dengxin; Gan, Qiaoqiang; Anderson, Wayne A

2016-02-17

Here, we report an approach to realize highly transparent low resistance Al-doped ZnO (AZO) films for broadband transparent conductors. Thin Al films are deposited on ZnO surfaces, followed by thermal diffusion processes, introducing the Al doping into ZnO thin films. By utilizing the interdiffusion of Al, Zn, and O, the chemical state of Al on the surfaces can be converted to a fully oxidized state, resulting in a low sheet resistance of 6.2 Ω/sq and an excellent transparency (i.e., 96.5% at 550 nm and higher than 85% up to 2500 nm), which is superior compared with some previously reported values for indium tin oxide, solution processed AZO, and many transparent conducting materials using novel nanostructures. Such AZO films are also applied as transparent conducting layers for AZO/Si heterojunction solar cells, demonstrating their applications in optoelectronic devices.

Dynamic Cluster Size Effects on the Glass Transition of Thin Films

NASA Astrophysics Data System (ADS)

Wool, Richard

2013-03-01

During cooling from the melt of amorphous materials, it has been shown experimentally that dynamic rigid clusters form in equilibrium with the liquid and their relaxation behavior determines the kinetic nature of Tg [Stanzione et al, J. Non Cryst Solids 357(2): 311-319 2011]. The fractal clusters of size R ~ 5-60 nm (polystyrene) have relaxation times τ ~ R1.8 (solid-to-liquid). They are analogous to sub critical size embryos during crystallization as the amorphous material tries to crystallize due to the strong intermolecular forces at T < Tm ; they are not related to density fluctuations or surface capillary waves. In free-standing thin films of thickness h, several important events occur: (a) The large clusters with R > h are excluded and the thin films have an average faster relaxation time compared to the bulk; consequently Tg decreases as h decreases. (b) The segmental dynamics at the 1 nm scale are largely not affected by nanoconfinement since Tg is determined only by the cluster dynamics with R >> 1 nm. (c) The mobile layer on the surface of free standing films is due to the presence of smaller clusters on the surface which will disappear with increasing rate of testing. (d) With adhesion to a solid substrate, the surface mobile layer disappears as the surface clusters size grow and the change in Tg is suppressed. (e) Physical aging is controlled by the relaxation of the rigid fractal clusters and in thin films, physical aging will occur more rapidly compared to the bulk. (f) The large effect of molecular weight M on Tg appears to be related to the effect on the cluster size distribution giving smaller clusters and faster relation times with increasing M. These results are in accord with the Twinkling Fractal theory of the glass transition.

Growth of highly strained CeO 2 ultrathin films

DOE PAGES

Shi, Yezhou; Lee, Sang Chul; Monti, Matteo; ...

2016-11-07

Large biaxial strain is a promising route to tune the functionalities of oxide thin films. However, large strain is often not fully realized due to the formation of misfit dislocations at the film/substrate interface. In this work, we examine the growth of strained ceria (CeO 2) thin films on (001)-oriented single crystal yttria-stabilized zirconia (YSZ) via pulsed-laser deposition. By varying the film thickness systematically between 1 and 430 nm, we demonstrate that ultrathin ceria films are coherently strained to the YSZ substrate for thicknesses up to 2.7 nm, despite the large lattice mismatch (~5%). The coherency is confirmed by bothmore » X-ray diffraction and high-resolution transmission electron microscopy. This thickness is several times greater than the predicted equilibrium critical thickness. Partial strain relaxation is achieved by forming semirelaxed surface islands rather than by directly nucleating dislocations. In situ reflective high-energy electron diffraction during growth confirms the transition from 2-D (layer-by-layer) to 3-D (island) at a film thickness of ~1 nm, which is further supported by atomic force microscopy. We propose that dislocations likely nucleate near the surface islands and glide to the film/substrate interface, as evidenced by the presence of 60° dislocations. Finally, an improved understanding of growing oxide thin films with a large misfit lays the foundation to systematically explore the impact of strain and dislocations on properties such as ionic transport and redox chemistry.« less

Interparticle coupling effect of silver-gold heterodimer to enhance light harvesting in ultrathin perovskite solar cell

NASA Astrophysics Data System (ADS)

Hu, Zhaosheng; Ma, Tingli; Hayase, Shuzi

2018-01-01

Thin perovskite solar cells are under intensive interest since they reduce the amount of absorber layer, especially toxic lead in methylammonium lead iodide (MAPbI3) devices and have wide application in semitransparent and tandem solar cells. However, due to the decrease of the layer thickness, thin perovskite devices with weak light-harvesting have poor performance. Moreover, the performance of plasmonic thin perovskite devices by incorporating noncoupling metal NPs cannot give comparable performance with normal devices. In this perspective, we discuss the implication of employing random silver-gold heterodimers in MAPbI3 solar cells with the aim of establishing some guidelines for the efficient ultrathin perovskite solar cells. This method induces an extraordinarily high light-harvesting for ultrathin perovskite film. And the underlying physical mechanism behind the enhanced absorption is deeply investigated by plasmon hybridization, dipolar-dipolar coupling method and FDTD simulation. We notice that perovskite embedded silver-gold heterodimer overcomes the vanished antibonding plasmon resononse (σ * ) in nonjunction area of gold/silver homodimer. A 150-nm perovskite film with embedded random silver-gold heterodimers with 80 nm size and 25 nm gap distance processes 28.15% absorption enhancement compared to the reference film, which is higher than the reported 10% for gold homodimers. And we also predict a realistic solution-processed, easy, and low-cost fabrication method, which provide a means to realize highly efficient ultrathin perovskite solar cell including other absorber-based photovoltaics.

Simultaneous Determination of Size and Quantification of Gold Nanoparticles by Direct Coupling Thin layer Chromatography with Catalyzed Luminol Chemiluminescence

PubMed Central

Yan, Neng; Zhu, Zhenli; He, Dong; Jin, Lanlan; Zheng, Hongtao; Hu, Shenghong

2016-01-01

The increasing use of metal-based nanoparticle products has raised concerns in particular for the aquatic environment and thus the quantification of such nanomaterials released from products should be determined to assess their environmental risks. In this study, a simple, rapid and sensitive method for the determination of size and mass concentration of gold nanoparticles (AuNPs) in aqueous suspension was established by direct coupling of thin layer chromatography (TLC) with catalyzed luminol-H2O2 chemiluminescence (CL) detection. For this purpose, a moving stage was constructed to scan the chemiluminescence signal from TLC separated AuNPs. The proposed TLC-CL method allows the quantification of differently sized AuNPs (13 nm, 41 nm and 100 nm) contained in a mixture. Various experimental parameters affecting the characterization of AuNPs, such as the concentration of H2O2, the concentration and pH of the luminol solution, and the size of the spectrometer aperture were investigated. Under optimal conditions, the detection limits for AuNP size fractions of 13 nm, 41 nm and 100 nm were 38.4 μg L−1, 35.9 μg L−1 and 39.6 μg L−1, with repeatabilities (RSD, n = 7) of 7.3%, 6.9% and 8.1% respectively for 10 mg L−1 samples. The proposed method was successfully applied to the characterization of AuNP size and concentration in aqueous test samples. PMID:27080702

Mechanical properties of metal-ceramic nanolaminates: Effect of constraint and temperature

DOE PAGES

Yang, Ling Wei; Mayer, Carl; Li, Nan; ...

2017-09-21

Al/SiC nanolaminates with equal nominal thicknesses of the Al and SiC layers (10, 25, 50 and 100 nm) were manufactured by magnetron sputtering. The mechanical properties were measured at 25 °C and 100 °C by means of nanoindentation and micropillar compression tests and the deformation mechanisms were analyzed by in situ micropillar compression tests in the transmission electron microscope. In addition, finite element simulations of both tests were carried out to ascertain the role played by the strength of the Al layers and by the elastic constraint of the ceramic layers on the plastic flow of Al in the mechanicalmore » response. It was found that the mechanical response was mainly controlled by the constraint during nanoindentation or micropillar compression tests of very thin layered (≈10 nm) laminates, while the influence of the strength of Al layers was not as critical. This behavior was reversed, however, for thick layered laminates (100 nm). Here, these mechanisms point to the different effects of layer thickness during nanoindentation and micropillar compression, at both temperatures, and showed the critical role played by constraint on the mechanical response of nanolaminates made of materials with a very large difference in the elasto-plastic properties.« less

Novel behaviors of anomalous Hall effect in TbFeCo ferrimagnetic thin films

NASA Astrophysics Data System (ADS)

Ando, Ryo; Komine, Takashi; Sato, Shiori; Kaneta, Shingo; Hara, Yoshiaki

2018-05-01

We investigate the temperature dependence and the thickness dependence of anomalous Hall effect (AHE) of TbFeCo ultra-thin films under high magnetic field. The sign change on temperature dependence of AHE in 20nm-thick TbFeCo film with rare-earth (RE) rich composition was observed. The AHE sign at low temperature is negative while it gradually becomes positive as the temperature increases. Moreover, the AHE sign for 5nm-thick TbFeCo film remains positive while that for 50nm-thick TbFeCo film remains negative at temperature in the range from 5 K to 400 K. The similar thickness dependence of AHE in TM-rich samples was also observed. From the mean-field approximation, the sign change temperature in AHE is related to the compensation temperature and the existence of interfacial region, which has the TM-rich composition and the weak anisotropy. Therefore, We clarified that the novel behavior of AHE sign changes in TbFeCo thin films with different thickness can be explained by the interfacial layer with weak anisotropy and two phase model.

Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

2005-01-01

Thin, transparent layers comprising mats of carbon nanotubes have been proposed for providing lateral (that is, inplane) electrical conductivities for collecting electric currents from the front surfaces of the emitter layers of thin-film solar photovoltaic cells. Traditionally, thin, semitransparent films of other electrically conductive materials (usually, indium tin oxide, zinc oxide, or cadmium sulfide) have been used for this purpose. As in the cases of the traditional semitransparent conductive films, the currents collected by the nanotube layers would, in turn, be further collected by front metal contact stripes. Depending on details of a specific solar-cell design, the layer of carbon nanotubes would be deposited in addition to, or instead of, a semitransparent layer of one of these traditional conductive materials (see figure). The proposal is expected to afford the following advantages: The electrical conductivity of the carbon- nanotube layer would exceed that of the corresponding semitransparent layer of traditional electrically conductive material. The greater electrical conductivity of the carbon-nanotube layer would make it possible to retain adequate lateral electrical conductivity while reducing the thickness of, or eliminating entirely, the traditional semitransparent conductive layer. As a consequence of thinning or elimination of the traditional semitransparent conductive layer, less light would be absorbed, so that more of the incident light would be available for photovoltaic conversion. The greater electrical conductivity of the carbon-nanotube layer would make it possible to increase the distance between front metal contact stripes, in addition to (or instead of) thinning or eliminating the layer of traditional semitransparent conductive material. Consequently, the fraction of solar-cell area shadowed by front metal contact stripes would be reduced again, making more of the incident light available for photovoltaic conversion. The electrical conductivities of individual carbon nanotubes can be so high that the mat of carbon nanotubes could be made sparse enough to be adequately transparent while affording adequate lateral electrical conductivity of the mat as a whole. The thickness of the nanotube layer would be chosen so that the layer would contribute significant lateral electrical conductivity, yet would be as nearly transparent as possible to incident light. A typical thickness for satisfying these competing requirements is expected to lie between 50 and 100 nm. The optimum thickness must be calculated by comparing the lateral electrical conductivity, the distance between front metal stripes, and the amount of light lost by absorption in the nanotube layer.

Water-Soluble Epitaxial NaCl Thin Film for Fabrication of Flexible Devices.

PubMed

Lee, Dong Kyu; Kim, Sungjoo; Oh, Sein; Choi, Jae-Young; Lee, Jong-Lam; Yu, Hak Ki

2017-08-18

We studied growth mechanisms of water-soluble NaCl thin films on single crystal substrates. Epitaxial growth of NaCl(100) on Si(100) and domain-matched growth of NaCl(111) on c-sapphire were obtained at thicknesses below 100 nm even at room temperature from low lattice mismatches in both cases. NaCl thin film, which demonstrates high solubility selectivity for water, was successfully applied as a water-soluble sacrificial layer for fabrication of several functional materials, such as WO 3 nano-helix and Sn doped In 2 O 3 nano-branches.

Combining light-harvesting with detachability in high-efficiency thin-film silicon solar cells.

PubMed

Ram, Sanjay K; Desta, Derese; Rizzoli, Rita; Bellettato, Michele; Lyckegaard, Folmer; Jensen, Pia B; Jeppesen, Bjarke R; Chevallier, Jacques; Summonte, Caterina; Larsen, Arne Nylandsted; Balling, Peter

2017-06-01

Efforts to realize thin-film solar cells on unconventional substrates face several obstacles in achieving good energy-conversion efficiency and integrating light-management into the solar cell design. In this report a technique to circumvent these obstacles is presented: transferability and an efficient light-harvesting scheme are combined for thin-film silicon solar cells by the incorporation of a NaCl layer. Amorphous silicon solar cells in p-i-n configuration are fabricated on reusable glass substrates coated with an interlayer of NaCl. Subsequently, the solar cells are detached from the substrate by dissolution of the sacrificial NaCl layer in water and then transferred onto a plastic sheet, with a resultant post-transfer efficiency of 9%. The light-trapping effect of the surface nanotextures originating from the NaCl layer on the overlying solar cell is studied theoretically and experimentally. The enhanced light absorption in the solar cells on NaCl-coated substrates leads to significant improvement in the photocurrent and energy-conversion efficiency in solar cells with both 350 and 100 nm thick absorber layers, compared to flat-substrate solar cells. Efficient transferable thin-film solar cells hold a vast potential for widespread deployment of off-grid photovoltaics and cost reduction.

Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

NASA Astrophysics Data System (ADS)

Elam, Fiona M.; Starostin, Sergey A.; Meshkova, Anna S.; van der Velden-Schuermans, Bernadette C. A. M.; van de Sanden, Mauritius C. M.; de Vries, Hindrik W.

2017-06-01

Industrially and commercially relevant roll-to-roll atmospheric pressure-plasma enhanced chemical vapour deposition was used to synthesize smooth, 80 nm silica-like bilayer thin films comprising a dense ‘barrier layer’ and comparatively porous ‘buffer layer’ onto a flexible polyethylene 2,6 naphthalate substrate. For both layers, tetraethyl orthosilicate was used as the precursor gas, together with a mixture of nitrogen, oxygen and argon. The bilayer films demonstrated exceptionally low effective water vapour transmission rates in the region of 6.1  ×  10-4 g m-2 d-1 (at 40 °C, 90% relative humidity), thus capable of protecting flexible photovoltaics and thin film transistors from degradation caused by oxygen and water. The presence of the buffer layer within the bilayer architecture was mandatory in order to achieve the excellent encapsulation performance. Atomic force microscopy in addition to solvent permeation measurements, confirmed that the buffer layer prevented the formation of performance-limiting defects in the bilayer thin films, which likely occur as a result of excessive plasma-surface interactions during the deposition process. It emerged that the primary function of the buffer layer was therefore to act as a protective coating for the flexible polymer substrate material.

Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

PubMed

Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

2012-12-14

The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.

PubMed

Shen, Guozhen; Chen, Di; Chen, Po-Chiang; Zhou, Chongwu

2009-05-26

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga(2)O(3) heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

Growth of ultra-thin TiO 2 films by spray pyrolysis on different substrates

NASA Astrophysics Data System (ADS)

Oja Acik, I.; Junolainen, A.; Mikli, V.; Danilson, M.; Krunks, M.

2009-12-01

In the present study TiO 2 films were deposited by spray pyrolysis method onto ITO covered glass and Si (1 0 0) substrates. The spray solution containing titanium(IV) isopropoxide, acetylacetone and ethanol was sprayed at a substrate temperature of 450 °C employing 1-125 spray pulses (1 s spray and 30 s pause). According to AFM, continuous coverage of ITO and Si substrates with TiO 2 layer is formed by 5-10 and below 5 spray pulses, respectively. XPS studies revealed that TiO 2 film growth on Si substrate using up to 4 spray pulses follows 2D or layer-by-layer-growth. Above 4 spray pulses, 3D or island growth becomes dominant irrespective of the substrate. Only 50 spray pulses result in TiO 2 layer with the thickness more than XPS measurement escape depth as any signal from the substrate could not be detected. TiO 2 grain size remains 30 nm on ITO and increases from 10-20 nm to 50-100 nm on Si substrate with the number of spray pulses from 1 to 125.

Mechanics of an Asymmetric Hard-Soft Lamellar Nanomaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Weichao; Fredrickson, Glenn H.; Kramer, Edward J.

2016-03-24

Nanolayered lamellae are common structures in nanoscience and nanotechnology, but most are nearly symmetric in layer thickness. Here, we report on the structure and mechanics of highly asymmetric and thermodynamically stable soft–hard lamellar structures self-assembled from optimally designed PS 1-(PI-b-PS 2) 3 miktoarm star block copolymers. The remarkable mechanical properties of these strong and ductile PS (polystyrene)-based nanomaterials can be tuned over a broad range by varying the hard layer thickness while maintaining the soft layer thickness constant at 13 nm. Upon deformation, thin PS lamellae (<100 nm) exhibited kinks and predamaged/damaged grains, as well as cavitation in the softmore » layers. In contrast, deformation of thick lamellae (>100 nm) manifests cavitation in both soft and hard nanolayers. In situ tensile-SAXS experiments revealed the evolution of cavities during deformation and confirmed that the damage in such systems reflects both plastic deformation by shear and residual cavities. The aspects of the mechanics should point to universal deformation behavior in broader classes of asymmetric hard–soft lamellar materials, whose properties are just being revealed for versatile applications.« less

Development of an Anti-Corrosion Conductive Nano Carbon Coating Layer on Metal Bipolar Plates.

PubMed

Yeo, Kiho; Kim, Juyong; Kim, Jongryoul

2018-09-01

For automotive applications of polymer electrolyte membrane fuel cells, the enhancement of the corrosion resistance of metal bipolar plates has been a critical issue with regard to the lifespan of fuel cell stacks. In this paper, we present a novel method for increasing the lifespan by means of a conductive carbon coating on bipolar plates. Conductive carbon films were plasma coated onto metal bipolar plates in a vacuum at various temperatures. As a result, 316L stainless plates with a 10-nm-thick carbon coating layer on a 20-nm-thick CrN undercoat layer showed-contact resistance of 10.71 mΩcm2@10 kgf/cm2 and a corrosion current of 0.5 μA/cm2@0.6 V. This thin coating layer with high conductivity and excellent corrosion resistance suggests a new, effective coating method for the mass production of metal bipolar plates.

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr ,Ti)O3 thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Tang, X. G.; Tian, H. Y.; Wang, J.; Wong, K. H.; Chan, H. L. W.

2006-10-01

Ba(Zr0.2Ti0.8)O3 (BZT) thin films on Pt(111)/Ti /SiO2/Si(100) substrates without and with CaRuO3 (CRO) buffer layer were fabricated at 650°C in situ by pulsed laser deposition. The BZT thin films showed a dense morphology, many clusters are found on the surface images of BZT/Pt films, which are composed by nanosized grains of 25-35nm; the average grain size of BZT/CRO films is about 80nm, which lager than that of BZT/Pt thin film. The dielectric constants and dissipation factors of BZT/Pt and BZT/CRO thin films were 392 and 0.019 and 479 and 0.021 at 1MHz, respectively. The dielectric constant of BZT/Pt and BZT/CRO thin films changes significantly with applied dc bias field and has high tunabilities and figures of merit of ˜70% and 37 and 75% and 36, respectively, under an applied field of 400kV /cm. The possible microstructural background responsible for the high dielectric constant and tunability was discussed.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Enzyme-assisted growth of nacreous CaCO3/polymer hybrid nanolaminates via the formation of mineral bridges

NASA Astrophysics Data System (ADS)

Yeom, Bongjun; Char, Kookheon

2016-06-01

Laminated nanostructures in nacre have been adopted as models in the fabrication of strong, tough synthetic nanocomposites. However, the utilization of CaCO3 biominerals in these composites is limited by the complexity of the synthesis method for nanosized biominerals. In this study, we use the enzymatic reaction of urease to generate a nanoscale CaCO3 thin film to prepare CaCO3/polymer hybrid nanolaminates. Additional layers of CaCO3 thin film are consecutively grown over the base CaCO3 layer with the intercalation of organic layers. The morphology and crystallinity of the added CaCO3 layers depend strongly on the thickness of the organic layer coated on the underlying CaCO3 layer. When the organic layer is less than 20 nm thick, the amorphous CaCO3 layer is spontaneously transformed into crystalline calcite layer during the growth process. We also observe crystalline continuity between adjacent CaCO3 layers through interconnecting mineral bridges. The formation of these mineral bridges is crucial to the epitaxial growth of CaCO3 layers, similar to the formation of natural nacre.

Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO{sub 2} seed layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asib, N. A. M., E-mail: amierahasib@yahoo.com; Afaah, A. N.; Aadila, A.

Titanium dioxide (TiO{sub 2}) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO{sub 2} seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO{sub 2} seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO{sub 2} seed layer of 0.100 M. PL spectramore » of the TiO{sub 2}: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO{sub 2} seed layer.« less

Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

PubMed

Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

2017-01-27

Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

Influence of gold nanoparticles on the 805 nm gain in Tm3+/Yb3+ codoped PbO-GeO2 pedestal waveguides

NASA Astrophysics Data System (ADS)

de Assumpção, T. A. A.; Camilo, M. E.; Alayo, M. I.; da Silva, D. M.; Kassab, L. R. P.

2017-10-01

The production and characterization of pedestal waveguides based on PbO-GeO2 amorphous thin films codoped with Tm3+/Yb3+, with and without gold nanoparticles (NPs), are reported. Pedestal structure was obtained by conventional photolithography and plasma etching. Tm3+/Yb3+ codoped PGO amorphous thin film was obtained by RF Magnetron Sputtering deposition and used as core layer in the pedestal optical waveguide. The minimum propagation losses in the waveguide were 3.6 dB/cm at 1068 nm. The internal gain at 805 nm was enhanced and increased to 8.67 dB due to the presence of gold NPs. These results demonstrate for the first time that Tm3+/Yb3+ codoped PbO-GeO2 waveguides are promising for first telecom window and integrated photonics, especially for applications on fiber network at short distances.

Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Chowdhury, Md Delwar Hossain; Migliorato, Piero; Jang, Jin

2010-10-01

The effect of exposure to ultraviolet radiation on the characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) fabricated by sputtering is investigated. After illumination with 1.5 mW cm-2 of 365 nm radiation, in the absence of any bias stress, a persistent negative shift in the characteristics is observed in the dark. The magnitude of the shift increases with exposure time, saturating after about 10 min. Under these conditions the subthreshold exhibits a rigid shift of around 3.6 V and 7.5 V for TFTs with an active layer thickness of 20 nm and 50 nm, respectively. The shift in the dark increases (decreases) when a negative (positive) bias stress is applied under illumination. The instability behavior caused by exposure to light, in the absence of any bias stress, can be explained on the basis of ionization of neutral oxygen vacancies.

Tuning the thickness of electrochemically grafted layers in large area molecular junctions

NASA Astrophysics Data System (ADS)

Fluteau, T.; Bessis, C.; Barraud, C.; Della Rocca, M. L.; Martin, P.; Lacroix, J.-C.; Lafarge, P.

2014-09-01

We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2-27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar K.; Reddy, G. B.

In this work, we have successfully developed plasma assisted paste sublimation route to deposit vertically aligned MoO{sub 3} nanoflakes (NFs) on nickel coated glass substrate in oxygen plasma ambience with the assistant of Ni thin layer as a catalyst. In our case, sublimation source (Mo strip surface) is resistively heated by flowing current across it. The structural, morphological, and optical properties of NFs have been investigated systematically using x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with selected area electron diffraction (SAED), High resolution transmission electron microscopy (HRTEM), micro-Raman spectroscopy, and Photoluminescence (PL) spectroscopy. Studies reveal thatmore » the presence of oxygen plasma and the nickel thin layer are very essential for the growth of vertically aligned NFs. The observed results divulge that α-MoO{sub 3} NFs are deposited uniformly on large scale with very high aspect (height/thickness) ratio more than 30 and well aligned along [0 k 0] crystallographic direction where k is even (2, 4, 6). Raman spectrum shows a significant size effect on the vibrational property of MoO{sub 3} nanoflakes. The PL spectrum of MoO{sub 3} NFs was recorded at room temperature and four prominent peaks at 365 nm, 395 nm, 452 nm, and 465 nm corresponding to UV-visible region were observed. In this paper, a three step growth strategy for the formation of MoO{sub 3} NFs has been proposed in detail.« less

Surface engineering with functional random copolymers for nanolithographic applications

NASA Astrophysics Data System (ADS)

Sparnacci, Katia; Antonioli, Diego; Gianotti, Valentina; Lupi, Federico Ferrarese; Giammaria, Tommaso Jacopo; Seguini, Gabriele; Perego, Michele; Laus, Michele

2016-05-01

Hydroxyl-terminated P(S-r-MMA) random copolymers with molecular weight ranging from 1.7 to 69 kg/mol and a styrene unit fraction of 61% were grafted onto a silicon oxide surface and subsequently used to study the orientation of domains with respect to the substrate, in cylinder-forming PS-b-PMMA block copolymer thin films. When the thickness (H) of the grafted layer is greater than 5-6 nm, a perpendicular orientation is always observed because of the efficient decoupling of the BCP film from the polar SiO2 surface. Conversely, if H is less than 5 nm, the critical thickness of the grafted layer, which allows the neutralization of the substrate and promotion of the perpendicular orientation of the nanodomains in the BCP film, is found to depend on the Mn of the RCP. In particular, when Mn = 1700, a 2.0 nm thick grafted layer is sufficient to promote the perpendicular orientation of the PMMA cylinders in the PS-b-PMMA BCP film.

Graphene based resonance structure to enhance the optical pressure between two planar surfaces.

PubMed

Hassanzadeh, Abdollah; Azami, Darya

2015-12-28

To enhance the optical pressure on a thin dielectric sample, a resonance structure using graphene layers coated over a metal film on a high index prism sputtered with MgF2 was theoretically analyzed. The number of graphene layers and the thicknesses of metal and MgF2 films were optimized to achieve the highest optical pressure on the sample. Effects of three different types of metals on the optical pressure were investigated numerically. In addition, simulations were carried out for samples with various thicknesses. Our numerical results show that the optical pressure increased by more than five orders of magnitude compared to the conventional metal-film-base resonance structure. The highest optical pressure was obtained for 10 layers of graphene deposited on 29-nm thick Au film and 650 nm thickness of MgF2 at 633nm wavelength, The proposed graphene based resonance structure can open new possibilities for optical tweezers, nanomechnical devices and surface plasmon based sensing and imaging techniques.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage fade upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[LixMnyTM1-x-y]O2 , TM = Ni, Co or Fe) have recently been identified to be correlated to the gradual phase transformation, featuring the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5 nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li0.2Ni0.2Mn0.6]O2 (LMR) particles, which are identical to those reported due to the charge-dischargemore » cycle but are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200 kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by energy dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LMR is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. This study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Thin film solar cell design based on photonic crystal and diffractive grating structures.

PubMed

Mutitu, James G; Shi, Shouyuan; Chen, Caihua; Creazzo, Timothy; Barnett, Allen; Honsberg, Christiana; Prather, Dennis W

2008-09-15

In this paper we present novel light trapping designs applied to multiple junction thin film solar cells. The new designs incorporate one dimensional photonic crystals as band pass filters that reflect short light wavelengths (400 - 867 nm) and transmit longer wavelengths(867 -1800 nm) at the interface between two adjacent cells. In addition, nano structured diffractive gratings that cut into the photonic crystal layers are incorporated to redirect incoming waves and hence increase the optical path length of light within the solar cells. Two designs based on the nano structured gratings that have been realized using the scattering matrix and particle swarm optimization methods are presented. We also show preliminary fabrication results of the proposed devices.

Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB₂ thin films

DOE PAGES

Tan, Teng; Wolak, M. A.; Acharya, Narendra; ...

2015-04-01

For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB₂ films, including the thickness dependence of the lower critical field Hc₁. MgB₂ thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc₁ at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB₂/MgO multilayers to enhance the vortex penetrationmore » field.« less

Theoretical study of ZnS/CdS bi-layer for thin-film CdTe solar cell

NASA Astrophysics Data System (ADS)

Mohamed, H. A.; Mohamed, A. S.; Ali, H. M.

2018-05-01

The performance of CdTe solar cells is strongly limited by the thickness of CdS window layer. A higher short-circuit current density might be achieved by decreasing the thickness of CdS layer as a result of reducing the absorption losses that take place in this layer. However, it is difficult to obtain uniform and pin-hole free CdS layers thinner than 50 nm. This problem can be solved through increasing the band gap of the window layer by adding a wide band gap semiconductor such as ZnS. In this work, bi-layer ZnS/CdS film was studied as an improved window layer of ITO/ZnS/CdS/CdTe solar cell. The total thickness of ZnS/CdS layer was taken about 60 nm. The effect of optical losses due to reflection at different interfaces in the cell and absorption in ITO, ZnS, CdS as well as the recombination loss have been studied. Finally, the effects of the recombination losses in the space-charge region and the reflectivity from the back contact were taken into accounts. The results revealed that the optical losses of 23% were achieved at 60 nm thickness of CdS and theses losses minimized to 18% when ZnS layer of 30 nm thickness was added to CdS layer. The minimum optical and recombination losses of about 26% were obtained at 1 ns of electron life-time and ∼0.4 μm width of the space-charge region. The maximum efficiency of 18.5% was achieved for ITO/CdS/CdTe cell and the efficiency increased up to 20% for ITO/ZnS/CdS/CdTe cell.

Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

NASA Astrophysics Data System (ADS)

Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

2018-07-01

Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

The effects of energy transfer on the Er{sup 3+} 1.54 {mu}m luminescence in nanostructured Y{sub 2}O{sub 3} thin films with heterogeneously distributed Yb{sup 3+} and Er{sup 3+} codopants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoang, J.; Chang, J. P.; Schwartz, Robert N.

2012-09-15

We report the effects of heterogeneous Yb{sup 3+} and Er{sup 3+} codoping in Y{sub 2}O{sub 3} thin films on the 1535 nm luminescence. Yb{sup 3+}:Er{sup 3+}:Y{sub 2}O{sub 3} thin films were deposited using sequential radical enhanced atomic layer deposition. The Yb{sup 3+} energy transfer was investigated for indirect and direct excitation of the Yb {sup 2}F{sub 7/2} state using 488 nm and 976 nm sources, respectively, and the trends were described in terms of Forster and Dexter's resonant energy transfer theory and a macroscopic rate equation formalism. The addition of 11 at. % Yb resulted in an increase in themore » effective Er{sup 3+} photoluminescence (PL) yield at 1535 nm by a factor of 14 and 42 under 488 nm and 976 nm excitations, respectively. As the Er{sub 2}O{sub 3} local thickness was increased to greater than 1.1 A, PL quenching occurred due to strong local Er{sup 3+}{r_reversible} Er{sup 3+} excitation migration leading to impurity quenching centers. In contrast, an increase in the local Yb{sub 2}O{sub 3} thickness generally resulted in an increase in the effective Er{sup 3+} PL yield, except when the Er{sub 2}O{sub 3} and Yb{sub 2}O{sub 3} layers were separated by more than 2.3 A or were adjacent, where weak Yb{sup 3+}{r_reversible} Er{sup 3+} coupling or strong Yb{sup 3+}{r_reversible} Yb{sup 3+} interlayer migration occurred, respectively. Finally, it is suggested that enhanced luminescence at steady state was observed under 488 nm excitation as a result of Er{sup 3+}{yields} Yb{sup 3+} energy back transfer coupled with strong Yb{sup 3+}{r_reversible} Yb{sup 3+} energy migration.« less

Infrared reflective coatings for building and automobile glass windows for heat protection

NASA Astrophysics Data System (ADS)

Butt, M. A.; Fomchenkov, S. A.; Kazanskiy, N. L.; Ullah, A.; Ali, R. Z.; Habib, M.

2017-04-01

Sunlight can be used a source of light in buildings and automobiles, however infrared wavelengths in sunlight result in heating. In this work, Infrared Reflective Coatings are designed using thin films to transmit visible wavelengths 400 700 nm while reflecting infrared wavelengths above 700 nm. Three different design approaches have been used, namely single layer of metal, sandwich structure and multilayer design. Four metals (Ag, Au, Al and Cu) and two dielectrics (TiO2 and SiO2) are used in this study. Designs with Ag show maximum reflection of Infrared wavelengths in all designs. Sandwich structures of TiO2-Ag-TiO2 on substrate with 22 nm of thickness for each layer show the maximum transmission of 87% in the visible region and maximum reflection of Infrared wavelengths.

New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells

PubMed Central

Wang, DongLin; Su, Gang

2014-01-01

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-performance thin-film solar cells. In our strategy, a flat active layer is adopted for avoiding electrical degradation, and an optimization algorithm is applied to seek for an optimized light trapping structure for the best optical benefit. As an example, we show that the efficiency of a flat a-Si:H thin-film solar cell can be promoted close to the certified highest value. It is also pointed out that, by choosing appropriate dielectric materials with high refractive index (>3) and high transmissivity in wavelength region of 350 nm–800 nm, the conversion efficiency of solar cells can be further enhanced. PMID:25418477

Influence of Clay Platelet Spacing on Oxygen Permeability of Thin Film Assemblies

NASA Astrophysics Data System (ADS)

Priolo, Morgan; Gamboa, Daniel; Grunlan, Jaime

2010-03-01

Thin films of anionic natural montmorrilonite clay and various polyelectrolytes have been produced by alternately dipping a plastic substrate into dilute aqueous mixtures containing each ingredient in an effort to show the influence of clay platelet spacing on thin film permeability. After polymer-clay layers have been sequentially deposited, the resulting transparent films exhibit a brick wall nanostructure comprised of completely exfoliated clay bricks in polymeric mortar. This brick wall forms an extremely tortuous path for a molecule to traverse, creating channels perpendicular to the concentration gradient that increase the molecule's diffusion length and delay its transmission. To a first approximation, greater clay spacing (i.e., reduced clay concentration) produces greater oxygen barrier. Oxygen transmission rates below 0.005 cm^3/m^2.day have been achieved for films with only eight clay layers (total thickness of only 200 nm). With optical transparencies greater than 86% and the ability to be microwaved, these thin film composites are good candidates for flexible electronics packaging and foil replacement for food.

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

NASA Astrophysics Data System (ADS)

Albrecht, Alexander R.; Rotter, Thomas J.; Hains, Christopher P.; Stintz, Andreas; Xin, Guofeng; Wang, Tsuei-Lian; Kaneda, Yushi; Moloney, Jerome V.; Malloy, Kevin J.; Balakrishnan, Ganesh

2011-03-01

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

NASA Astrophysics Data System (ADS)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

Spontaneous nano-gap formation in Ag film using NaCl sacrificial layer for Raman enhancement

NASA Astrophysics Data System (ADS)

Min, Kyungchan; Jeon, Wook Jin; Kim, Youngho; Choi, Jae-Young; Yu, Hak Ki

2018-03-01

We report the method of fabrication of nano-gaps (known as hot spots) in Ag thin film using a sodium chloride (NaCl) sacrificial layer for Raman enhancement. The Ag thin film (20-50 nm) on the NaCl sacrificial layer undergoes an interfacial reaction due to the AgCl formed at the interface during water molecule intercalation. The intercalated water molecules can dissolve the NaCl molecules at interfaces and form the ionic state of Na+ and Cl-, promoting the AgCl formation. The Ag atoms can migrate by the driving force of this interfacial reaction, resulting in the formation of nano-size gaps in the film. The surface-enhanced Raman scattering activity of Ag films with nano-size gaps has been investigated using Raman reporter molecules, Rhodamine 6G (R6G).

Three-dimensional atom probe tomography of oxide, anion, and alkanethiolate coatings on gold.

PubMed

Zhang, Yi; Hillier, Andrew C

2010-07-15

We have used three-dimensional atom probe tomography to analyze several nanometer-thick and monomolecular films on gold surfaces. High-purity gold wire was etched by electropolishing to create a sharp tip suitable for field evaporation with a radius of curvature of <100 nm. The near-surface region of a freshly etched gold tip was examined with the atom probe at subnanometer spatial resolution and with atom-level composition accuracy. A thin contaminant layer, primarily consisting of water and atmospheric gases, was observed on a fresh tip. This sample exhibited crystalline lattice spacings consistent with the interlayer spacing of {200} lattice planes of bulk gold. A thin oxide layer was created on the gold surface via plasma oxidation, and the thickness and composition of this layer was measured. Clear evidence of a nanometer-thick oxide layer was seen coating the gold tip, and the atomic composition of the oxide layer was consistent with the expected stoichiometry for gold oxide. Monomolecular anions layers of Br(-) and I(-) were created via adsorption from aqueous solutions onto the gold. Atom probe data verified the presence of the monomolecular anion layers on the gold surface, with ion density values consistent with literature values. A hexanethiolate monolayer was coated onto the gold tip, and atom probe analysis revealed a thin film whose ion fragments were consistent with the molecular composition of the monolayer and a surface coverage similar to that expected from literature. Details of the various coating compositions and structures are presented, along with discussion of the reconstruction issues associated with properly analyzing these thin-film systems.

Dewetting of Thin Polymer Films

NASA Astrophysics Data System (ADS)

Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

2001-03-01

DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

Design and characterization of terahertz-absorbing nano-laminates of dielectric and metal thin films.

PubMed

Bolakis, C; Grbovic, D; Lavrik, N V; Karunasiri, G

2010-07-05

A terahertz-absorbing thin-film stack, containing a dielectric Bragg reflector and a thin chromium metal film, was fabricated on a silicon substrate for applications in bi-material terahertz (THz) sensors. The Bragg reflector is to be used for optical readout of sensor deformation under THz illumination. The THz absorption characteristics of the thin-film composite were measured using Fourier transform infrared spectroscopy. The absorption of the structure was calculated both analytically and by finite element modeling and the two approaches agreed well. Finite element modeling provides a convenient way to extract the amount of power dissipation in each layer and is used to quantify the THz absorption in the multi-layer stack. The calculation and the model were verified by experimentally characterizing the multi-layer stack in the 3-5 THz range. The measured and simulated absorption characteristics show a reasonably good agreement. It was found that the composite film absorbed about 20% of the incident THz power. The model was used to optimize the thickness of the chromium film for achieving high THz absorption and found that about 50% absorption can be achieved when film thickness is around 9 nm.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

PubMed Central

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.

PubMed

Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro

2018-03-20

Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7  dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.

Organics Exposure in Orbit (OREOcube): A Next-Generation Space Exposure Platform

NASA Technical Reports Server (NTRS)

Elsaesser, Andreas; Quinn, Richard; Ehrenfreund, Pascale; Mattioda, Andrew L.; Ricco, Antonio J.; Alonzo, Jason; Breitenbach, Alex; Chan, Yee Kim; Fresneau, Aurelien; Salama, Farid;

Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

NASA Astrophysics Data System (ADS)

Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

2018-05-01

The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

NASA Astrophysics Data System (ADS)

Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

2014-12-01

In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

Aerosol characteristics in the entrainment interface layer in relation to the marine boundary layer and free troposphere

NASA Astrophysics Data System (ADS)

Dadashazar, Hossein; Braun, Rachel A.; Crosbie, Ewan; Chuang, Patrick Y.; Woods, Roy K.; Jonsson, Haflidi H.; Sorooshian, Armin

2018-02-01

This study uses airborne data from two field campaigns off the California coast to characterize aerosol size distribution characteristics in the entrainment interface layer (EIL), a thin and turbulent layer above marine stratocumulus cloud tops, which separates the stratocumulus-topped boundary layer (STBL) from the free troposphere (FT). The vertical bounds of the EIL are defined in this work based on considerations of buoyancy and turbulence using thermodynamic and dynamic data. Aerosol number concentrations are examined from three different probes with varying particle diameter (Dp) ranges: > 3 nm, > 10 nm, and 0.11-3.4 µm. Relative to the EIL and FT layers, the sub-cloud (SUB) layer exhibited lower aerosol number concentrations and higher surface area concentrations. High particle number concentrations between 3 and 10 nm in the EIL are indicative of enhanced nucleation, assisted by high actinic fluxes, cool and moist air, and much lower surface area concentrations than the STBL. Slopes of number concentration versus altitude in the EIL were correlated with the particle number concentration difference between the SUB and lower FT layers. The EIL aerosol size distribution was influenced by varying degrees from STBL aerosol versus subsiding FT aerosol depending on the case examined. These results emphasize the important role of the EIL in influencing nucleation and aerosol-cloud-climate interactions.

Study of the Au-Cr bilayer system using X-ray reflectivity, GDOES, and ToF-SIMS

DOE PAGES

Jonnard, Philippe; Modi, Mohammed H.; Le Guen, Karine; ...

2018-04-17

Here, we study a Au (25 nm)/Cr (10 nm) bilayer system as a model of mirror for the soft X–ray energy range. The Au and Cr thin films are a few nanometer thick and are deposited on a float glass substrate. The sample is characterized by using 3 complementary techniques: soft X–ray reflectivity, glow discharge optical emission spectrometry (GDOES), and time–of–flight secondary ion mass spectroscopy (ToF–SIMS). Soft X–ray reflectivity provides information about the thickness and roughness of the different layers, while GDOES is used to obtain the elemental depth profile of the stack and ToF–SIMS to obtain the elemental andmore » chemical depth profiles. GDOES and ToF–SIMS have both a nanometer depth resolution. A coherent description of the bilayer stack is obtained through the combination of these techniques. It consists in 5 layers namely a surface contamination layer, a principal gold layer, a Au–Cr mixed layer, a Cr layer, and another contamination layer at the top of the substrate.« less

Study of the Au-Cr bilayer system using X-ray reflectivity, GDOES, and ToF-SIMS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jonnard, Philippe; Modi, Mohammed H.; Le Guen, Karine

Here, we study a Au (25 nm)/Cr (10 nm) bilayer system as a model of mirror for the soft X–ray energy range. The Au and Cr thin films are a few nanometer thick and are deposited on a float glass substrate. The sample is characterized by using 3 complementary techniques: soft X–ray reflectivity, glow discharge optical emission spectrometry (GDOES), and time–of–flight secondary ion mass spectroscopy (ToF–SIMS). Soft X–ray reflectivity provides information about the thickness and roughness of the different layers, while GDOES is used to obtain the elemental depth profile of the stack and ToF–SIMS to obtain the elemental andmore » chemical depth profiles. GDOES and ToF–SIMS have both a nanometer depth resolution. A coherent description of the bilayer stack is obtained through the combination of these techniques. It consists in 5 layers namely a surface contamination layer, a principal gold layer, a Au–Cr mixed layer, a Cr layer, and another contamination layer at the top of the substrate.« less

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Cr incorporated phase transformation in Y2O3 under ion irradiation

PubMed Central

Li, N.; Yadav, S. K.; Xu, Y.; Aguiar, J. A.; Baldwin, J. K.; Wang, Y. Q.; Luo, H. M.; Misra, A.; Uberuaga, B. P.

2017-01-01

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y2O3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1st layer)/100 nm Y2O3 (2nd layer)/135 nm Fe - 20 at.% Cr (3rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y2O3 interface. Further, correlated with Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y2O3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y2O3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys. PMID:28091522

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A modelmore » of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.« less

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE PAGES

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun; ...

2017-01-16

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Fluoride Thin Films: from Exchange Bias to Multferroicity

NASA Astrophysics Data System (ADS)

Johnson, Trent A.

This dissertation concerns research into the growth and characterization fluoride thin films by molecular beam epitaxy. After a discussion of relevant background material and experimental procedures in the first two chapters, we study exchange bias in magnetic multilayers incorporating the uniaxial antiferromagnet FeF2, grown to varying thicknesses, sandwiched between ferromagnetic Co layers with fixed thicknesses of 5 and 20 nm. Several bilayers with only the 20 nm thick Co layer were grown for comparative study. The samples were grown on Al2O3 (112¯0) substrates at room temperature. In-situ RHEED and x-ray diffraction indicated the films were polycrystalline. The films were determined to have low surface and interlayer roughness, as determined by AFM and x-ray reflectivity. After field-cooling to below the Neel temperature of FeF2 in a magnetic field of 1 kOe, magnetic hysteresis loops were measured as a function of temperature. We found that both layers had a negative exchange bias, with the exchange bias of the thinner layer larger than that of the thicker layer. In addition, the coercivity below the blocking temperature TB of the thinner layer was significantly larger than that of the thick layer, even though the coercivity of the two layers was the same for T > TB. The exchange bias effect, manifested by a shift in these hysteresis loops, showed a strong dependence on the thickness of the antiferromagnet. Anisotropic magnetoresistance measurements provided additional insight into the magnetization reversal mechanism within the ferromagnets. The thickness dependent exchange anisotropy of trilayer and bilayer samples is explained by adapting a random field model to the antiferromagnet/ferromagnet interface. Finally, We investigate the temperature dependent growth, as well as the magnetic and ferroelectric properties of thin films of the multiferroic compounds BaMF4, where M = Fe, Co, Ni. The films were grown to thicknesses of 50 or 100 nm on single crystal Al2O3 (0001) substrates. X-ray diffraction showed that this family of films grew epitaxially in the (010) orientation, but were twinned in the plane, with three domain orientations rotated by 120 degrees relative to one another. Measurements of the remanent hysteresis via interdigitated electrodes showed that the compounds M = Co, and Ni were ferroelectric, but no switching behavior was observed in the Fe system at electric fields up to 400 kV/cm. Measurements of the field-cooled and zero-field-cooled magnetic moment confirmed low temperature antiferromagnetic behavior, and found new weak ferromagnetic phases induced by strain.

The investigation of the Cr doped ZnO thin films deposited by thermionic vacuum arc technique

NASA Astrophysics Data System (ADS)

Mohammadigharehbagh, Reza; Pat, Suat; Musaoglu, Caner; Korkmaz, Şadan; Özen, Soner

2018-02-01

Cr doped ZnO thin films were prepared onto glass and polyethylene terephthalate (PET) substrates using thermionic vacuum arc. XRD patterns show the polycrystalline nature of the films. Cr, Zn, ZnO and Cr2O3 were detected in the layers. The mean crystallite sizes of the films were calculated about 20 nm for the films onto glass and PET substrates. The maximum dislocation density and internal strain values of the films are calculated. According to the optical analysis, the average transmittance and reflectance of the films were found to be approximately 53% and 16% for glass and PET substrates, respectively. The mean refractive index of the layer decreased to 2.15 from 2.38 for the PET substrate. The band gap values of the Cr-doped ZnO thin films were determined as 3.10 and 3.13 eV for glass and PET substrates.

Application of scanning angle Raman spectroscopy for determining the location of buried polymer interfaces with tens of nanometer precision

DOE PAGES

Damin, Craig A.; Nguyen, Vy H. T.; Niyibizi, Auguste S.; ...

2015-02-11

In this study, near-infrared scanning angle (SA) Raman spectroscopy was utilized to determine the interface location in bilayer films (a stack of two polymer layers) of polystyrene (PS) and polycarbonate (PC). Finite-difference-time-domain (FDTD) calculations of the sum square electric field (SSEF) for films with total bilayer thicknesses of 1200–3600 nm were used to construct models for simultaneously measuring the film thickness and the location of the buried interface between the PS and PC layers. Samples with total thicknesses of 1320, 1890, 2300, and 2750 nm and varying PS/PC interface locations were analyzed using SA Raman spectroscopy. Comparing SA Raman spectroscopymore » and optical profilometry measurements, the average percent difference in the total bilayer thickness was 2.0% for films less than ~2300 nm thick. The average percent difference in the thickness of the PS layer, which reflects the interface location, was 2.5% when the PS layer was less than ~1800 nm. SA Raman spectroscopy has been shown to be a viable, non-destructive method capable of determining the total bilayer thickness and buried interface location for bilayer samples consisting of thin polymer films with comparable indices of refraction.« less

A Micro Oxygen Sensor Based on a Nano Sol-Gel TiO2 Thin Film

PubMed Central

Wang, Hairong; Chen, Lei; Wang, Jiaxin; Sun, Quantao; Zhao, Yulong

2014-01-01

An oxygen gas microsensor based on nanostructured sol-gel TiO2 thin films with a buried Pd layer was developed on a silicon substrate. The nanostructured titania thin films for O2 sensors were prepared by the sol-gel process and became anatase after heat treatment. A sandwich TiO2 square board with an area of 350 μm × 350 μm was defined by both wet etching and dry etching processes and the wet one was applied in the final process due to its advantages of easy control for the final structure. A pair of 150 nm Pt micro interdigitated electrodes with 50 nm Ti buffer layer was fabricated on the board by a lift-off process. The sensor chip was tested in a furnace with changing the O2 concentration from 1.0% to 20% by monitoring its electrical resistance. Results showed that after several testing cycles the sensor's output becomes stable, and its sensitivity is 0.054 with deviation 2.65 × 10−4 and hysteresis is 8.5%. Due to its simple fabrication process, the sensor has potential for application in environmental monitoring, where lower power consumption and small size are required. PMID:25192312

Characterization of high-{kappa} LaLuO{sub 3} thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Shu; Huang Sen; Chen Hongwei

2011-10-31

We report the study of high-dielectric-constant (high-{kappa}) dielectric LaLuO{sub 3} (LLO) thin film that is grown on AlGaN/GaN heterostructure by molecular beam deposition (MBD). The physical properties of LLO on AlGaN/GaN heterostrucure have been investigated with atomic force microscopy, x-ray photoelectron spectroscopy, and TEM. It is revealed that the MBD-grown 16 nm-thick LLO film is polycrystalline with a thin ({approx}2 nm) amorphous transition layer at the LLO/GaN interface. The bandgap of LLO is derived as 5.3 {+-} 0.04 eV from O1s energy loss spectrum. Capacitance-voltage (C-V) characteristics of a Ni-Au/LLO/III-nitride metal-insulator-semiconductor diode exhibit small frequency dispersion (<2%) and reveal amore » high effective dielectric constant of {approx}28 for the LLO film. The LLO layer is shown to be effective in suppressing the reverse and forward leakage current in the MIS diode. In particular, the MIS diode forward current is reduced by 7 orders of magnitude at a forward bias of 1 V compared to a conventional Ni-Au/III-nitride Schottky diode.« less

Shell structure of natural rubber particles: evidence of chemical stratification by electrokinetics and cryo-TEM.

PubMed

Rochette, Christophe N; Crassous, Jérôme J; Drechsler, Markus; Gaboriaud, Fabien; Eloy, Marie; de Gaudemaris, Benoît; Duval, Jérôme F L

2013-11-26

The interfacial structure of natural rubber (NR) colloids is investigated by means of cryogenic transmission electron microscopy (cryo-TEM) and electrokinetics over a broad range of KNO3 electrolyte concentrations (4-300 mM) and pH values (1-8). The asymptotic plateau value reached by NR electrophoretic mobility (μ) in the thin double layer limit supports the presence of a soft (ion- and water-permeable) polyelectrolytic type of layer located at the periphery of the NR particles. This property is confirmed by the analysis of the electron density profile obtained from cryo-TEM that evidences a ∼2-4 nm thick corona surrounding the NR polyisoprene core. The dependence of μ on pH and salt concentration is further marked by a dramatic decrease of the point of zero electrophoretic mobility (PZM) from 3.6 to 0.8 with increasing electrolyte concentration in the range 4-300 mM. Using a recent theory for electrohydrodynamics of soft multilayered particles, this "anomalous" dependence of the PZM on electrolyte concentration is shown to be consistent with a radial organization of anionic and cationic groups across the peripheral NR structure. The NR electrokinetic response in the pH range 1-8 is indeed found to be equivalent to that of particles surrounded by a positively charged ∼3.5 nm thick layer (mean dissociation pK ∼ 4.2) supporting a thin and negatively charged outermost layer (0.6 nm in thickness, pK ∼ 0.7). Altogether, the strong dependence of the PZM on electrolyte concentration suggests that the electrostatic properties of the outer peripheral region of the NR shell are mediated by lipidic residues protruding from a shell containing a significant amount of protein-like charges. This proposed NR shell interfacial structure questions previously reported NR representations according to which the shell consists of either a fully mixed lipid-protein layer, or a layer of phospholipids residing exclusively beneath an outer proteic film.

Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muthusubramanian, N.; Zant, H. S. J. van der; Galan, E.

We present a method to fabricate insulated gold mechanically controlled break junctions (MCBJ) by coating the metal with a thin layer of aluminum oxide using plasma enhanced atomic layer deposition. The Al{sub 2}O{sub 3} thickness deposited on the MCBJ devices was varied from 2 to 15 nm to test the suppression of leakage currents in deionized water and phosphate buffered saline. Junctions coated with a 15 nm thick oxide layer yielded atomically sharp electrodes and negligible conductance counts in the range of 1 to 10{sup −4} G{sub 0} (1 G{sub 0} = 77 μS), where single-molecule conductances are commonly observed. The insulated devices were usedmore » to measure the conductance of an amphiphilic oligophenylene ethynylene derivative in deionized water.« less

Drude conductivity exhibited by chemically synthesized reduced graphene oxide

NASA Astrophysics Data System (ADS)

Younas, Daniyal; Javed, Qurat-ul-Ain; Fatima, Sabeen; Kalsoom, Riffat; Abbas, Hussain; Khan, Yaqoob

2017-09-01

Electrical conductance in graphene layers having Drude like response due to massless Dirac fermions have been well explained theoretically as well as experimentally. In this paper Drude like electrical conductivity response of reduced graphene oxide synthesized by chemical route is presented. A method slightly different from conventional methods is used to synthesize graphene oxide which is then converted to reduced graphene oxide. Various analytic techniques were employed to verify the successful oxidation and reductions in the process and were also used to measure various parameters like thickness of layers and conductivity. Obtained reduced graphene oxide has very thin layers of thickness around 13 nm on average and reduced graphene oxide has average thickness below 20 nm. Conductivity of the reduced graphene was observed to have Drude like response which is explained on basis of Drude model for conductors.

Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

NASA Astrophysics Data System (ADS)

Yan, S. A.; Zhao, W.; Guo, H. X.; Xiong, Y.; Tang, M. H.; Li, Z.; Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.

2015-01-01

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2Ta2O9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Tuneable magnetic patterning of paramagnetic Fe{sub 60}Al{sub 40} (at. %) by consecutive ion irradiation through pre-lithographed shadow masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varea, A.; Surinach, S.; Baro, M. D.

2011-05-01

Arrays of ferromagnetic circular dots (with diameters ranging from 225 to 420 nm) have been prepared at the surface of atomically ordered paramagnetic Fe{sub 60}Al{sub 40} (at. %) sheets by means of ion irradiation through prelithographed poly(methyl methacrylate) (PMMA) masks. The cumulative effects of consecutive ion irradiation (using Ar{sup +} ions at 1.2 x 10{sup 14} ions/cm{sup 2} with 10, 13, 16, 19 and 22 keV incident energies) on the properties of the patterned dots have been investigated. A progressive increase in the overall magneto-optical Kerr signal is observed for increasingly larger irradiation energies, an effect which is ascribed tomore » accumulation of atomic disorder. Conversely, the coercivity, H{sub C}, shows a maximum after irradiating at 16-19 keV and it decreases for larger irradiation energies. Such a decrease in H{sub C} is ascribed to the formation of vortex states during magnetization reversal, in agreement with results obtained from micromagnetic simulations. At the same time, the PMMA layer, with an initial thickness of 90 nm, becomes progressively thinned during the successive irradiation processes. After irradiation at 22 keV, the remaining PMMA layer is too thin to stop the incoming ions and, consequently, ferromagnetism starts to be generated underneath the nominally masked areas. These experimental results are in agreement with calculations using the Monte-Carlo simulation Stopping Range of Ions in Matter software, which show that for exceedingly thin PMMA layers Ar{sup +} ions can reach the Fe{sub 60}Al{sub 40} layer despite the presence of the mask.« less

Influence of a novel co-doping (Zn + F) on the physical properties of nano structured (1 1 1) oriented CdO thin films applicable for window layer of solar cell

NASA Astrophysics Data System (ADS)

Anitha, M.; Saravanakumar, K.; Anitha, N.; Amalraj, L.

2018-06-01

Un-doped and co-doped (Zn + F) cadmium oxide (CdO) thin films were prepared by modified spray pyrolysis technique using a nebulizer on glass substrates kept at 200 °C. They were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy, Hall Effect and photoluminescence (PL) respectively. The thin films were having thickness in the range of 520-560 nm. They were well crystalline and displayed high transparency of about >70% in the visible region. It was clearly seen from the SEM photographs that co-doping causes notable changes in the surface morphology. Electrical study exhibited the resistivity of co-doped CdO thin films drastically fell to 1.43 × 10-4 Ω-cm compared with the un-doped CdO thin film. The obtained PL spectra were well corroborated with the structural and optical studies. The high transparency, wide band gap energy and enhanced electrical properties obtained infer that Zn + F co-doped CdO thin films find application in optoelectronic devices, especially in window layer of solar cells.

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

PubMed

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

Controlling effective aspect ratio and packing of clay with pH for improved gas barrier in nanobrick wall thin films.

PubMed

Hagen, David A; Saucier, Lauren; Grunlan, Jaime C

2014-12-24

Polymer-clay thin films constructed via layer-by-layer (LbL) assembly, with a nanobrick wall structure (i.e., clay nanoplatelets as bricks surrounded by a polyelectrolyte mortar), are known to exhibit a high oxygen barrier. Further barrier improvement can be achieved by lowering the pH of the clay suspension in the polyethylenimine (PEI) and montmorillonite (MMT) system. In this case, the charge of the deposited PEI layer is increased in the clay suspension environment, which causes more clay to be deposited. At pH 4, MMT platelets deposit with near perfect ordering, observed with transmission electron microscopy, enabling a 5× improvement in the gas barrier for a 10 PEI/MMT bilayer thin film (85 nm) relative to the same film made with pH 10 MMT. This improved gas barrier approaches that achieved with much higher aspect ratio vermiculite clay. In essence, lower pH is generating a higher effective aspect ratio for MMT due to greater induced surface charge in the PEI layers, which causes heavier clay deposition. These flexible, transparent nanocoatings have a wide range of possible applications, from food and electronics packaging to pressurized bladders.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

NASA Astrophysics Data System (ADS)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Optimization of exchange bias in Co/CoO magnetic nanocaps by tuning deposition parameters

NASA Astrophysics Data System (ADS)

Sharma, A.; Tripathi, J.; Ugochukwu, K. C.; Tripathi, S.

2017-03-01

In the present work, we report exchange bias tuning by varying thin film deposition parameters such as synthesis method and underlying layer patterning. The patterned substrates for this study were prepared by self-assembly of polystyrene (PS) latex spheres ( 530 nm) on Si (100) substrate. The desired magnetic nanocaps composed of CoO/Co bilayer film on these patterned substrates were prepared by molecular beam epitaxy technique under ultra-high vacuum conditions. For this, a Co layer of 10 nm thickness was deposited on the substrates and then oxidized in-situ to form CoO/Co/PS in-situ oxidized film or ex-situ in ambiance which also gives CoO/Co/PS naturally oxidized film. Simultaneously, reference thin films of Co ( 10 nm) were also prepared on plane Si substrate and similar oxidation treatments were performed on them respectively. The magnetic properties studied using SQUID technique revealed higher exchange bias ( 1736 Oe) in the in-situ oxidized Co/PS film as compared to that in naturally oxidized Co/PS film ( 1544 Oe) and also compared to the reference film. The observed variations in the magnetic properties are explained in terms of surface patterning induced structural changes of the deposited films and different oxidation methods.

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

NASA Astrophysics Data System (ADS)

Gao, Dan; Liu, Bo; Xu, Zhen; Wang, Heng; Xia, Yangyang; Wang, Lei; Zhu, Nanfei; Li, Ying; Zhan, Yipeng; Song, Zhitang; Feng, Songlin

2016-10-01

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin ( 4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

Formation of 100-nm periodic structures on a titanium surface by exploiting the oxidation and third harmonic generation induced by femtosecond laser pulses.

PubMed

Li, Xian-Feng; Zhang, Cheng-Yun; Li, Hui; Dai, Qiao-Feng; Lan, Sheng; Tie, Shao-Long

2014-11-17

Periodic surface structures with periods as small as about one-tenth of the irradiating femtosecond (fs) laser light wavelength were created on the surface of a titanium (Ti) foil by exploiting laser-induced oxidation and third harmonic generation (THG). They were achieved by using 100-fs laser pulses with a repetition rate of 1 kHz and a wavelength ranging from 1.4 to 2.2 μm. It was revealed that an extremely thin TixOy layer was formed on the surface of the Ti foil after irradiating fs laser light with a fluence smaller than the ablation threshold of Ti, leading to a significant enhancement in THG which may exceed the ablation threshold of TixOy. As compared with Ti, the maximum efficacy factor for TixOy appears at a larger normalized wavevector in the direction perpendicular to the polarization of the fs laser light. As a result, the THG-dominated laser ablation of TixOy induces 100-nm periodic structures parallel to the polarization of the fs laser light. The depth of the periodic structures was found to be ~10 nm by atomic force microscopy and the formation of the thin TixOy layer was verified by energy dispersive X-ray spectroscopy.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

NASA Astrophysics Data System (ADS)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

NASA Astrophysics Data System (ADS)

Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

2017-10-01

We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

NASA Astrophysics Data System (ADS)

Abbas, Haider; Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Kang, Tae Su; Yoon, Tae-Sik; Kang, Chi Jung

2018-06-01

Improved resistive switching characteristics are demonstrated in a hybrid device with Pt/Ti/MnO (thin film)/MnO (nanoparticle)/Pt structure. The hybrid devices of MnO thin film and nanoparticle assembly were fabricated. MnO nanoparticles with an average diameter of ∼30 nm were chemically synthesized and assembled as a monolayer on a Pt bottom electrode. A MnO thin film of ∼40 nm thickness was deposited on the nanoparticle assembly to form the hybrid structure. Resistive switching could be induced by the formation and rupture of conducting filaments in the hybrid oxide layers. The hybrid device exhibited very stable unipolar switching with good endurance and retention characteristics. It showed a larger and stable memory window with a uniform distribution of SET and RESET voltages. Moreover, the conduction mechanisms of ohmic conduction, space-charge-limited conduction, Schottky emission, and Poole–Frenkel emission have been investigated as possible conduction mechanisms for the switching of the devices. Using MnO nanoparticles in the thin film and nanoparticle heterostructures enabled the appropriate control of resistive random access memory (RRAM) devices and markedly improved their memory characteristics.