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Sample records for nonequilibrium charge carriers

  1. Diffusion of nonequilibrium carriers in low-dimensional structures

    NASA Astrophysics Data System (ADS)

    Achoyan, A.; Petrosyan, S.; Ruda, H. E.; Shik, A.

    2008-02-01

    The spatial distribution of nonequilibrium carriers generated by a partial illumination of one- and two-dimensional structures was analyzed theoretically. Due to weak electron screening, the carrier distribution in low-dimensional systems has distinct new features. For monopolar excitation, the concentration of nonequilibrium carriers decreases inside the dark regions hyperbolically in two-dimensional and logarithmically in one-dimensional structures, which results in monopolar injection, barely observable in bulk samples. Bipolar diffusion also differs markedly from that in bulk samples; in particular, there is a long-range hyperbolic tail in the majority carrier distribution, which can be either positive or negative, depending on the mobility ratio of majority and minority carriers.

  2. Charge carrier transport in polyvinylcarbazole

    NASA Astrophysics Data System (ADS)

    Tyutnev, Andrey P.; Saenko, Vladimir S.; Pozhidaev, Evgenii D.; Kolesnikov, Vladislav A.

    2006-07-01

    A critical analysis of the existing time-of-flight (TOF) data in poly(N-vinylcarbazole) (PVK) proves that these are highly controversial with claims and counterclaims about charge carrier transport (dispersive versus Gaussian). It is felt that the TOF method taken alone is incapable of resolving the standing dilemma. As a final means to resolve it, we propose a combination of two varieties of the TOF technique using both sheet-like and uniform carrier generation modes in conjunction with radiation-induced conductivity measurements. All three techniques are realized using the ELA-50 electron gun facility. To demonstrate the effectiveness of our approach we report experimental data for PVK, which show that carrier transport in this polymer is indeed dispersive. Evidence is presented substantiating the gross interference the surface traps could exert on the shape of a TOF transient. As a result, a preflight part of the TOF signal should not be used for parameter evaluation.

  3. Nonequilibrium charge susceptibility and dynamical conductance: identification of scattering processes in quantum transport.

    PubMed

    Ness, H; Dash, L K

    2012-03-23

    We calculate the nonequilibrium charge transport properties of nanoscale junctions in the steady state and extend the concept of charge susceptibility to the nonequilibrium conditions. We show that the nonequilibrium charge susceptibility is related to the nonlinear dynamical conductance. In spectroscopic terms, both contain the same features versus applied bias when charge fluctuation occurs in the corresponding electronic resonances. However, we show that, while the conductance exhibits features at biases corresponding to inelastic scattering with no charge fluctuations, the nonequilibrium charge susceptibility does not. We suggest that measuring both the nonequilibrium conductance and charge susceptibility in the same experiment will permit us to differentiate between different scattering processes in quantum transport.

  4. Charge carrier thermalization in organic diodes

    PubMed Central

    van der Kaap, N. J.; Koster, L. J. A.

    2016-01-01

    Charge carrier mobilities of organic semiconductors are often characterized using steady-state measurements of space charge limited diodes. These measurements assume that charge carriers are in a steady-state equilibrium. In reality, however, energetically hot carriers are introduces by photo-excitation and injection into highly energetic sites from the electrodes. These carriers perturb the equilibrium density of occupied states, and therefore change the overall charge transport properties. In this paper, we look into the effect of energetically hot carriers on the charge transport in organic semiconductors using steady state kinetic Monte Carlo simulations. For injected hot carriers in a typical organic semiconductor, rapid energetic relaxation occurs in the order of tens of nanoseconds, which is much faster than the typical transit time of a charge carrier throught the device. Furthermore, we investigate the impact of photo-generated carriers on the steady-state mobility. For a typical organic voltaic material, an increase in mobility of a factor of 1.1 is found. Therefore, we conclude that the impact of energetically hot carriers on normal device operation is limited. PMID:26791095

  5. Preface: Special issue featuring papers from the International Conference on Nonequilibrium Carrier Dynamics in Semiconductors

    NASA Astrophysics Data System (ADS)

    Reggiani, L.; Bordone, P.; Brunetti, R.

    2004-02-01

    The International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) celebrates 30 years since it first took place in Modena. Nonequilibrium dynamics of charge carriers, pioneered by the hot-electron concept, is an important issue for understanding electro-optic transport properties in semiconductor materials and structures. In these 30 years several topics have matured, and new ones have emerged thus fertilizing the field with a variety of physical problems and new ideas. The history of the conference is summarized in the opening paper `30 years of HCIS'. The future of the conference seems secure considering the continued lively interest of the participants. The conference addressed eleven major topics which constitute the backbone of the proceedings and are summarized as follows: carrier transport in low dimensional and nanostructure systems, nonequilibrium carriers in superlattices and devices, small devices and related phenomena, carrier dynamics and fluctuations, carrier quantum dynamics, coherent/incoherent carrier dynamics of optical excitations and ultra-fast optical phenomena, nonlinear optical effects, transport in organic matter, semiconductor-based spintronics, coherent dynamics in solid state systems for quantum processing and communication, novel materials and devices. Nanometric space scale and femtosecond time scale represent the ultimate domains of theoretical, experimental and practical interest. Traditional fields such as bulk properties, quantum transport, fluctuations and chaotic phenomena, etc, have received thorough and continuous attention. Emerging fields from previous conferences, such as quantum processing and communication, have been better assessed. New fields, such as spintronics and electron transport in organic matter, have appeared for the first time. One plenary talk, 11 invited talks, 230 submitted abstracts covering all these topics constituted a single-session conference. Following scientific selection

  6. Ultrafast Lateral Photo-Dember Effect in Graphene Induced by Nonequilibrium Hot Carrier Dynamics.

    PubMed

    Liu, Chang-Hua; Chang, You-Chia; Lee, Seunghyun; Zhang, Yaozhong; Zhang, Yafei; Norris, Theodore B; Zhong, Zhaohui

    2015-06-10

    The photo-Dember effect arises from the asymmetric diffusivity of photoexcited electrons and holes, which creates a transient spatial charge distribution and hence the buildup of a voltage. Conventionally, a strong photo-Dember effect is only observed in semiconductors with a large asymmetry between the electron and hole mobilities, such as in GaAs or InAs, and is considered negligible in graphene due to its electron-hole symmetry. Here, we report the observation of a strong lateral photo-Dember effect induced by nonequilibrium hot carrier dynamics when exciting a graphene-metal interface with a femtosecond laser. Scanning photocurrent measurements reveal the extraction of photoexcited hot carriers is driven by the transient photo-Dember field, and the polarity of the photocurrent is determined by the device's mobility asymmetry. Furthermore, ultrafast pump-probe measurements indicate the magnitude of photocurrent is related to the hot carrier cooling rate. Our simulations also suggest that the lateral photo-Dember effect originates from graphene's 2D nature combined with its unique electrical and optical properties. Taken together, these results not only reveal a new ultrafast photocurrent generation mechanism in graphene but also suggest new types of terahertz sources based on 2D nanomaterials.

  7. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    PubMed

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  8. Solid state cloaking for electrical charge carrier mobility control

    DOEpatents

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  9. Localized charge carriers in graphene nanodevices

    SciTech Connect

    Bischoff, D. Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K.

    2015-09-15

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  10. Collision integrals for charged-charged interaction in two-temperature non-equilibrium plasma

    SciTech Connect

    Ghorui, S.; Das, A. K.

    2013-09-15

    Choice of an appropriate form of shielding distance in the estimation of collision integrals under screened coulomb potential for two-temperature non-equilibrium plasma is addressed. Simple expressions for collision integrals for charged-charged interactions are derived. It is shown that while some of the formalisms used earlier completely ignore the presence of ions, the others incorporating it may result in negative collision integrals for the interactions involving particles at higher charged states. The parametric regimes of concern and impact of different formalisms on the computed transport properties are investigated with specific reference to nitrogen plasma. A revised definition of the shielding distance is proposed, which incorporates both electrons and ions, avoids the problem of negative collision integrals in all practical regimes of interest and results in calculated property values in close agreement with experimentally observed results.

  11. The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors

    SciTech Connect

    Konin, A.

    2011-05-15

    A theory of the thermopower is developed with consideration for the nonequilibrium charge produced in a p-type semiconductor and metal contacts. It is shown that the thermopower is generated due to redistribution of the nonequilibrium charge between the metal contacts and semiconductor via transport of nonequilibrium electrons from the metal to the semiconductor through one of the surfaces and from the semiconductor to the metal through the other surface. In a p-type semiconductor sample with thickness smaller than the diffusion length, at certain surface parameters, the thermopower nonlinearly depends on the temperature difference.

  12. Nonequilibrium carrier dynamics in ultrathin Si-on-glass films

    NASA Astrophysics Data System (ADS)

    Serafini, J.; Akbas, Y.; Crandall, L.; Bellman, R.; Kosik Williams, C.; Sobolewski, Roman

    2015-10-01

    We present a femtosecond pump-probe spectroscopy approach for characterization of amorphous and microcrystalline silicon films grown on glass substrates. Such films are presently being considered as absorbers in tandem-type, Si-based photovoltaic cells. Our experiments consisted of time-resolved, two-colour femtosecond optical measurements, performed in the transmission mode in a wide range of delay times. Depending on the sample growth process, collected normalized transmissivity change (ΔT/T) waveforms exhibited a bi-exponential relaxation dynamics with the characteristic times varying from picoseconds to nanoseconds. Experimental data were interpreted using a three-rate-equation models, and the relaxation was identified as, depending on the Si film type, being dominated by either carrier trapping or electron-phonon cooling and followed by electron-hole recombination. An excellent fit between the model and the ΔT/T transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

  13. Hot Charge Carrier Transmission from Plasmonic Nanostructures.

    PubMed

    Christopher, Phillip; Moskovits, Martin

    2017-03-16

    Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes-processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal-semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases. Expected final online publication date for the Annual Review of Physical Chemistry Volume 68 is April 20, 2017. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.

  14. Ultrafast non-equilibrium carrier dynamics in semiconductor laser mode-locking

    NASA Astrophysics Data System (ADS)

    Hader, J.; Scheller, M.; Laurain, A.; Kilen, I.; Baker, C.; Moloney, J. V.; Koch, S. W.

    2017-01-01

    Experimental and theoretical results on the mode-locking dynamics in vertical-external-cavity surface-emitting lasers with semiconductor and graphene saturable absorber mirrors are reviewed with an emphasis on the role of nonequilibrium carrier effects. The systems are studied theoretically using a fully microscopic many-body model for the carrier distributions and polarizations, coupled to Maxwell’s equations for the field propagation. Pump-probe measurements are performed with (sub-) 100 fs resolution. The analysis shows that the non-equilibrium carrier dynamics in the gain quantum-wells and saturable absorber medium significantly influences the system’s response and the resulting mode-locked pulses. The microscopic model is used to study the pulse build up from spontaneous emission noise and to determine the dependence of achievable pulse lengths and fluences on the amounts of saturable and non-saturable losses and the optical gain. The change of the group delay dispersion (GDD) on the pump level is examined and the dependence of the pulse lengths on the total amount of GDD is demonstrated experimentally. Theory-experiment comparisons are used to demonstrate the highly quantitative accuracy of the fully microscopic modeling.

  15. Charge carrier mobility in hybrid halide perovskites.

    PubMed

    Motta, Carlo; El-Mellouhi, Fedwa; Sanvito, Stefano

    2015-08-03

    The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5-10 cm(2)V(-1)s(-1) and that for holes within 1-5 cm(2)V(-1)s(-1), where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI3 octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials.

  16. Charge carrier mobility in hybrid halide perovskites

    PubMed Central

    Motta, Carlo; El-Mellouhi, Fedwa; Sanvito, Stefano

    2015-01-01

    The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5–10 cm2V−1s−1 and that for holes within 1–5 cm2V−1s−1, where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI3 octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials. PMID:26235910

  17. Generation of deformation waves in the processes of photoexcitation and recombination of nonequilibrium carriers in silicon

    NASA Astrophysics Data System (ADS)

    Avanesyan, S. M.; Gusev, V. E.; Zheludev, N. I.

    1986-07-01

    The shape of acoustic pulses excited in crystalline silicon during absorption of Nd3+ YAG laser radiation was studied as a function of incident light intensity. It was revealed that the amplitude of the dilatation wave is saturated while the duration of the compression pulse is shortened. A theoretical model is suggested which explains the above experimental facts by a decrease in the time of Auger recombination for nonequilibrium carriers with an increase in their concentration for higher intensity of the optical excitation. The value of the Auger constant obtained from the experiment is ˜5×10-31 cm6s-1.

  18. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    SciTech Connect

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei

    2014-12-07

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T{sup −γ}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

  19. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  20. Nonequilibrium effects on charge and energy partitioning after an interaction quench

    NASA Astrophysics Data System (ADS)

    Calzona, Alessio; Gambetta, Filippo Maria; Carrega, Matteo; Cavaliere, Fabio; Sassetti, Maura

    2017-02-01

    Charge and energy fractionalization are among the most intriguing features of interacting one-dimensional fermion systems. In this work we determine how these phenomena are modified in the presence of an interaction quench. Charge and energy are injected into the system suddenly after the quench, by means of tunneling processes with a noninteracting one-dimensional probe. Here, we demonstrate that the system settles to a steady state in which the charge fractionalization ratio is unaffected by the prequenched parameters. On the contrary, due to the postquench nonequilibrium spectral function, the energy partitioning ratio is strongly modified, reaching values larger than 1. This is a peculiar feature of the nonequilibrium dynamics of the quench process and it is in sharp contrast with the nonquenched case, where the ratio is bounded by 1.

  1. Diffusive-convective transition in the non-equilibrium charging of an electric double layer

    NASA Astrophysics Data System (ADS)

    Lobaskin, Vladimir; Netz, Roland R.

    2016-12-01

    We study the non-equilibrium electrolyte kinetics in a planar nanocapacitor that is driven by periodically switching surfaces charges using simulations, theory and scaling analysis. The combined effects of inter-ionic charge correlations and hydrodynamic interactions lead to correlated convective behavior for weakly charged ions. These dynamic correlations, signaling the breakdown of the Poisson-Nernst-Planck theory, are distinct from static correlations that are manifested by the crossover from Poisson-Boltzmann to strong-coupling theory that occurs as the ion valency increases.

  2. Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

    DOE PAGES

    Serafini, John; Akbas, Yunus; Crandall, Lucas; ...

    2016-03-02

    Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping;more » while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.« less

  3. Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

    NASA Astrophysics Data System (ADS)

    Serafini, John; Akbas, Yunus; Crandall, Lucas; Bellman, Robert; Kosik Williams, Carlo; Sobolewski, Roman

    2016-04-01

    A femtosecond pump-probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ˜300-500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron-phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley-Read-Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

  4. Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

    SciTech Connect

    Serafini, John; Akbas, Yunus; Crandall, Lucas; Bellman, Robert; Williams, Carlo Kosik; Sobolewski, Robert

    2016-03-02

    Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

  5. Photogeneration of charge carriers in titanium oxides

    NASA Astrophysics Data System (ADS)

    Itoh, Chihiro; Iwahashi, Kuniaki; Kan'no, Ken-ichi

    2002-05-01

    We have measured action spectra of the photoconductivity of rutile crystal at ˜4 K. The photoconductivity spectrum shows a keen rise at 3.0 eV and shows a peak at 3.2 eV and a shoulder around 3.7 eV. The threshold energy of the photoconductivity excitation well agrees with the onset of the fundamental optical absorption. This result indicates that the carriers contributing to the photoconductivity are generated by the fundamental excitation of the crystal. We have found that the photoconductivity shows remarkable field dependence. Below 5 V/mm, the photoconductivity was almost field independent. On the other hand, increasing the field strength in the range from 5 to 25 V/mm strongly enhanced the photoconductivity and varied the shape of the action spectrum. The origin of the field dependence is discussed.

  6. Space charge corrected electron emission from an aluminum surface under non-equilibrium conditions

    SciTech Connect

    Wendelen, W.; Bogaerts, A.; Mueller, B. Y.; Rethfeld, B.; Autrique, D.

    2012-06-01

    A theoretical study has been conducted of ultrashort pulsed laser induced electron emission from an aluminum surface. Electron emission fluxes retrieved from the commonly employed Fowler-DuBridge theory were compared to fluxes based on a laser-induced non-equilibrium electron distribution. As a result, the two- and three-photon photoelectron emission parameters for the Fowler-DuBridge theory have been approximated. We observe that at regimes where photoemission is important, laser-induced electron emission evolves in a more smooth manner than predicted by the Fowler-DuBridge theory. The importance of the actual electron distribution decreases at higher laser fluences, whereas the contribution of thermionic emission increases. Furthermore, the influence of a space charge effect on electron emission was evaluated by a one dimensional particle-in-cell model. Depending on the fluences, the space charge reduces the electron emission by several orders of magnitude. The influence of the electron emission flux profiles on the effective electron emission was found to be negligible. However, a non-equilibrium electron velocity distribution increases the effective electron emission significantly. Our results show that it is essential to consider the non-equilibrium electron distribution as well as the space charge effect for the description of laser-induced photoemission.

  7. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  8. Charge carrier coherence and Hall effect in organic semiconductors

    SciTech Connect

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  9. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  10. The Influence of Trapped Ions and Non-equilibrium EDF on Dust Particle Charging

    SciTech Connect

    Sukhinin, G. I.; Fedoseev, A. V.; Antipov, S. N.; Petrov, O. F.; Fortov, V. E.

    2008-09-07

    Dust particles charging in a low-pressure glow discharge was investigated theoretically with the help of model for trapped and free ions coupled with the self-consistent solution of Poisson equation for electric potential. Non-equilibrium (non-Maxwellian) character of electron energy distribution function depending on gas pressure and electric field was also taken into account on the basis of the solution of kinetic Boltzmann equation. The results were compared with the experimental measurements of dust particle charge depending on gas pressure. It was shown that the calculated effective charge, i.e. the difference of the dust particle charge and trapped ion charge, is in a fairly good agreement with the experimental data.

  11. Shielding of a Moving Charged Dust Particle in the Nonequilibrium Plasma

    SciTech Connect

    Filippov, A. V.; Pal, A. F.; Starostin, A. N.; Momot, A. I.; Zagorodny, A. G.

    2008-09-07

    Study of shielding of a moving charged dust particle in the nonequilibrium plasma was performed. It is known that in the collisionless so-called Vlasov plasma the electric field of a slowly moving charged particle at high distances corresponds to quadrupole [1, 2, 3]. It was found that in the collisional plasma the electric field of a moving dust particle had the dipole component and the long distance behavior of the electric fields was defined by this component. Therefore the interaction of dust particles in plasma flow became dependent on the relative orientation of the interpaticle radius-vector and the flow velocity vector.

  12. Organic Charge Carriers for Perovskite Solar Cells.

    PubMed

    Völker, Sebastian F; Collavini, Silvia; Delgado, Juan Luis

    2015-09-21

    The photovoltaic field is currently experiencing the "perovskite revolution". These materials have been known for decades, but only recently have they been applied in solid-state solar cells to obtain outstanding power conversion efficiencies. Given that the variety of perovskites used so far is limited, a lot of attention has been devoted to the development of suitable organic charge-transport materials to improve device performance. In this article, we will focus on the most promising materials able to transport electrons or holes from a structural point of view. Thereby, we focus on organic materials owing to their ease of preparation and manipulation, and this is nicely combined with the potential tuning of their properties through chemical synthesis.

  13. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Per-minute carrier common line charge. 69.154 Section 69.154 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES... carrier common line charge. (a) Local exchange carriers may recover a per-minute carrier common...

  14. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

  15. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Carrier access charge billing and collecting... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and... billing and collecting of access charges to interexchange carriers. (b) Of access charges other than...

  16. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 2 2011-10-01 2011-10-01 false Carrier access charge billing and collecting... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and... billing and collecting of access charges to interexchange carriers. (b) Of access charges other than...

  17. Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.

    PubMed

    Zhang, Yingjie; Chen, Qian; Alivisatos, A Paul; Salmeron, Miquel

    2015-07-08

    Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step function changes of gate bias. The measurements reveal an exponential decay of mobile carrier density with time constants of 3-5 s for holes and ∼10 s for electrons. An Ohmic behavior, with uniform carrier density, was observed along the channel during the injection and transport processes. These slow, uniform carrier trapping processes are reversible, with time constants that depend critically on the gas environment. We propose that the underlying mechanism is some reversible electrochemical process involving dissociation and diffusion of water and/or oxygen related species. These trapping processes are dynamically activated by the injected charges, in contrast with static electronic traps whose presence is independent of the charge state. Understanding and controlling these processes is important for improving the performance of electronic, optoelectronic, and memory devices based on disordered semiconductors.

  18. Spectroscopy of equilibrium and nonequilibrium charge transfer in semiconductor quantum structures

    NASA Astrophysics Data System (ADS)

    Rössler, C.; Burkhard, S.; Krähenmann, T.; Röösli, M.; Märki, P.; Basset, J.; Ihn, T.; Ensslin, K.; Reichl, C.; Wegscheider, W.

    2014-08-01

    We investigate equilibrium and nonequilibrium charge-transfer processes by performing high-resolution transport spectroscopy. Using electrostatically defined quantum dots for energy-selective emission and detection, we achieved very high spectral resolution and a high degree of tunability of relevant experimental parameters. Most importantly, we observe that the spectral width of elastically transferred electrons can be substantially smaller than the linewidth of a thermally broadened Coulomb peak. This finding indicates that the charge-transfer process is fast compared to the electron-phonon interaction time. By drawing an analogy to double quantum dots, we argue that the spectral width of the elastic resonance is determined by the lifetime broadening hΓ of the emitter and detector states. Good agreement with the model is found also in an experiment in which the charge transfer is in the regime hΓ≫kBT. By performing spectroscopy below the Fermi energy, we furthermore observe elastic and inelastic transfer of holes.

  19. Non-equilibrium energy loss for very highly charged ions in insulators

    SciTech Connect

    Briere, M.A.; Schenkel, T.; Bauer, P.; Amau, A.

    1996-12-31

    The energy loss of 144 keV Ar{sup +16} ions on a bilayer structure of C-CaF{sub 2} has been measured. An asymmetry in the results is found depending on which layer is passed by the ion first: the energy loss is about four times larger when the CaF{sub 2} layer is traversed by the ion first. We interpret this as an indication of the existence of a nonequilibrium charge state of the Ar ions inside the solid in the case of the insulator.

  20. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    NASA Technical Reports Server (NTRS)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  1. Nonequilibrium Dynamical Mean-Field Theory for the Charge-Density-Wave Phase of the Falicov-Kimball Model

    SciTech Connect

    Matveev, O. P.; Shvaika, A. M.; Devereaux, T. P.; Freericks, J. K.

    2015-12-08

    Nonequilibrium dynamical mean-field theory (DMFT) is developed for the case of the charge-density-wave ordered phase. We consider the spinless Falicov-Kimball model which can be solved exactly. This strongly correlated system is then placed in an uniform external dc electric field. We present a complete derivation for nonequilibrium dynamical mean-field theory Green’s functions defined on the Keldysh-Schwinger time contour. We also discuss numerical issues involved in solving the coupled equations.

  2. Charge-carrier screening in single-layer graphene.

    PubMed

    Siegel, David A; Regan, William; Fedorov, Alexei V; Zettl, A; Lanzara, Alessandra

    2013-04-05

    The effect of charge-carrier screening on the transport properties of a neutral graphene sheet is studied by directly probing its electronic structure. We find that the Fermi velocity, Dirac point velocity, and overall distortion of the Dirac cone are renormalized due to the screening of the electron-electron interaction in an unusual way. We also observe an increase of the electron mean free path due to the screening of charged impurities. These observations help us to understand the basis for the transport properties of graphene, as well as the fundamental physics of these interesting electron-electron interactions at the Dirac point crossing.

  3. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    PubMed Central

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-01-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level. PMID:27040365

  4. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    NASA Astrophysics Data System (ADS)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  5. Organic (opto)electronic materials: understanding charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2008-05-01

    There is growing interest in using organic (opto)electronic materials for applications in electronics and photonics. In particular, organic semiconductor thin films offer several advantages over traditional silicon technology, including low-cost processing, the potential for large-area flexible devices, high-efficiency light emission, and widely tunable properties through functionalization of the molecules. Over the past decade, remarkable progress in materials design and purification has been made, which led to applications of organic semiconductors in light-emitting diodes, polymer lasers, photovoltaic cells, high-speed photodetectors, organic thin-film transistors, and many others. Most of the applications envisioned for organic semiconductors rely on their conductive or photoconductive properties. However, despite remarkable progress in organic electronics and photonics, the nature of charge carrier photogeneration and transport in organic semiconductors is not completely understood and remains controversial, partly due to difficulties in assessing intrinsic properties that are often masked by impurities, grain boundaries, etc. Measurements of charge carrier dynamics at picosecond time scales after excitation reveal the intrinsic nature of mobile charge carriers before they are trapped at defect sites. In this presentation, I will review the current state of the field and summarize our recent results on photoconductivity of novel high-performance organic semiconductors (such as functionalized pentacene and anthradithiophene thin films) from picoseconds to seconds after photoexcitation. Photoluminescent properties of these novel materials will also be discussed.

  6. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGES

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  7. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation.

    PubMed

    Nakano, M; Shibuya, K; Okuyama, D; Hatano, T; Ono, S; Kawasaki, M; Iwasa, Y; Tokura, Y

    2012-07-25

    In the classic transistor, the number of electric charge carriers--and thus the electrical conductivity--is precisely controlled by external voltage, providing electrical switching capability. This simple but powerful feature is essential for information processing technology, and also provides a platform for fundamental physics research. As the number of charges essentially determines the electronic phase of a condensed-matter system, transistor operation enables reversible and isothermal changes in the system's state, as successfully demonstrated in electric-field-induced ferromagnetism and superconductivity. However, this effect of the electric field is limited to a channel thickness of nanometres or less, owing to the presence of Thomas-Fermi screening. Here we show that this conventional picture does not apply to a class of materials characterized by inherent collective interactions between electrons and the crystal lattice. We prepared metal-insulator-semiconductor field-effect transistors based on vanadium dioxide--a strongly correlated material with a thermally driven, first-order metal-insulator transition well above room temperature--and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state. This non-local switching of the electronic state is achieved by applying a voltage of only about one volt. In a voltage-sweep measurement, the first-order nature of the metal-insulator transition provides a non-volatile memory effect, which is operable at room temperature. Our results demonstrate a conceptually new field-effect device, extending the concept of electric-field control to macroscopic phase control.

  8. Polaron mass of charge carriers in semiconductor quantum wells

    SciTech Connect

    Maslov, A. Yu. Proshina, O. V.

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  9. Charge carrier tuning of mid-infrared plasmonic devices

    NASA Astrophysics Data System (ADS)

    Anglin, Kevin

    There is currently a wide variety of passive plasmonic technologies, with applications in the fields of sensing, security, and optical interconnects and computing. Development of a rapidly and broadly tunable plasmonic device would be an enabling technology, giving active control over these traditionally passive devices. The free charge carrier concentration directly affects the dielectric permittivity of a semiconductor, which in turn determines the plasmonic resonance. Metal-oxide-semiconductor capacitors using n-type substrates permit the modulation of free charge carriers in a semiconductor by applying a bias. In this study, MOS-capacitors were fabricated with an extraordinary optical transmission gratings built into the top gate. Tuning of the optical resonance of an EOT spectrum is shown applying a reverse bias across the semiconductor. The oxide layer used was hafnium dioxide, grown by atomic layer deposition. The electrical properties of the hafnia were studied in order to maximize the capabilities of this design. The samples were processed using standard photolithography and wet etching techniques, and characterized by optical microscopy, probe testing, and transmission spectroscopy. Resonant tuning of 30 nm has been demonstrated. The maximum depletion width in the semiconductor limited the effect and prohibited broader tuning.

  10. Dynamics of charge carriers on hexagonal nanoribbons with vacancy defects

    NASA Astrophysics Data System (ADS)

    Ferreira da Cunha, Wiliam; de Oliveira Neto, Pedro Henrique; Terai, Akira; Magela e Silva, Geraldo

    2016-07-01

    We develop a general model to investigate the dynamics of charge carriers in vacancy endowed honeycomb two-dimensional nanolattices. As a fundamental application, results concerning the influence of vacancies placed on different sites of semiconducting armchair graphene nanoribbons (AGNR) over the transport of polarons are presented. It is observed that the positioning of vacancies plays a major role over the scattering of the charge carriers, in the sense that their overall mobility is determined by where the defect is allocated. By considering different structural configurations of the system, the arising polaron can either move freely or be reflected. Therefore, our work provides a phenomenological understanding of the underlying mechanism responsible for the change of conductivity experienced by systems in which structural defects are present, a fact that has been reported for different nanostructures of the same symmetry. Because vacancies are one of the most common kinds of defects and are, in practice, unavoidable, the kind of description proposed in the present paper is crucial to correctly address transport and electronic properties in more realistic electronic devices based on two-dimensional nanolattices.

  11. Charging of dust grains in a nonequilibrium plasma of a stratified glow discharge

    NASA Astrophysics Data System (ADS)

    Sukhinin, G. I.; Fedoseev, A. V.

    2007-12-01

    A theoretical model is presented that describes the charging of dust grains in the positive plasma column of a stratified glow dc discharge in argon. A one-dimensional self-consistent model is used to obtain axial profiles of the electric field, as well as the electron energy distribution function along the axis of the discharge tube. Radial profiles of the electric field are determined in the ambipolar diffusion approximation. It is assumed that, in the radial direction, the electron distribution function depends only on the total electron energy. Two-dimensional distributions of the discharge plasma parameters are calculated and used to determine the potential and charge of a test dust grain at a certain point within the discharge and the electrostatic forces acting on it. It is shown that the grain charge distribution depends strongly on the nonequilibrium electron distribution function and on the nonuniform distribution of the electric field in a stratified glow discharge. A discussion is presented on the suspension of dust grains, the separation of grains by size in the discharge striations, and a possible mechanism for the onset of vortex dust motion at the edge of a dust cloud.

  12. Charge carrier photogeneration, trapping, and space-charge field formation in PVK-based photorefractive materials

    NASA Astrophysics Data System (ADS)

    Däubler, T. K.; Bittner, R.; Meerholz, K.; Cimrová, V.; Neher, D.

    2000-05-01

    We studied the dark conductivity (jdark), the photoconductivity (jphoto), and the charge carrier photogeneration efficiency η of poly(N-vinylcarbazole)-based photorefractive (PR) materials with different glass-transition temperatures (Tg) and chromophore content (ρCHR). Measurements were carried out at wavelengths similar to those used in degenerate four-wave mixing (DFWM) and two-beam coupling (2BC) experiments. Both thick (37 μm) and thin samples (~1 μm) were analyzed. Photoconductivity experiments at different temperatures show that both jdark and jphoto are thermally activated. For jdark the activation is not related to the glass-transition temperature of the blends, whereas photocurrents exhibit a universal behavior with respect to Tr=Tg-T. The charge carrier photogeneration efficiency η was measured by xerographic discharge experiments. η was found to be independent of both Tg and of ρCHR. The photoconductivity gain factor G defined as the number of charge carriers measured in photoconductivity in relation to the number of carriers initially photogenerated as determined by the xerographic experiments is used to compare the results of photoconductivity and xerographic discharge experiments. G is found to be much smaller than unity even for thin samples, which indicates that the mean free path of the photogenerated charge carriers is less than 1 μm at photoelectrical equilibrium. Using Schildkraut's model for the space-charge field formation in organic PR materials, trap densities Ti of approximately 1017 cm-3 could be derived from G. The field and temperature dependence of Ti is independent of ρCHR and might account for the universal Tr dependence of jphoto. The estimated trap densities are used to calculate the first-order Fourier component of the space-charge field in the PR materials illuminated with a sinusoidal intensity pattern. Modifying Schildkraut's model so that the tilt between the applied electric field and the index of refraction grating

  13. The effect of carrier gas contaminants on the charging probability of aerosols under bipolar charging conditions

    PubMed Central

    Steiner, Gerhard; Reischl, Georg P.

    2012-01-01

    This work concentrates on the experimental determination of the properties of ionic molecular clusters that are produced in the bipolar ionic atmosphere of a radioactivity based 241Am charger. The main scope of this study was to investigate the dependency of the ions' properties on carrier gas contaminants caused by the evaporation of trace gases from different kinds of frequently encountered tubing materials. A recently developed high resolution mobility spectrometer allows the precise determination of the ions' electrical mobility; an empirical mass-mobility relationship was used to approximate the corresponding ion masses. It was found that impurities in the carrier gas dramatically change the pattern of the ion mobility/size distribution, resulting in very different ion properties that strongly depend on the carrier gas composition. Since the ion properties control the charging process of aerosols, it was further investigated how the different ion properties affect the calculation of the charging probabilities of aerosols. The results show that despite large variations of the ions' properties, only a minor effect on the calculated charging probabilities can be found. PMID:23209330

  14. Fractal spectrum of charge carriers in quasiperiodic graphene structures.

    PubMed

    Sena, S H R; Pereira, J M; Farias, G A; Vasconcelos, M S; Albuquerque, E L

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  15. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    PubMed

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

  16. Theory of chemical kinetics and charge transfer based on nonequilibrium thermodynamics.

    PubMed

    Bazant, Martin Z

    2013-05-21

    the past 7 years, which is capable of answering these questions. The reaction rate is a nonlinear function of the thermodynamic driving force, the free energy of reaction, expressed in terms of variational chemical potentials. The theory unifies and extends the Cahn-Hilliard and Allen-Cahn equations through a master equation for nonequilibrium chemical thermodynamics. For electrochemistry, I have also generalized both Marcus and Butler-Volmer kinetics for concentrated solutions and ionic solids. This new theory provides a quantitative description of LFP phase behavior. Concentration gradients and elastic coherency strain enhance the intercalation rate. At low currents, the charge-transfer rate is focused on exposed phase boundaries, which propagate as "intercalation waves", nucleated by surface wetting. Unexpectedly, homogeneous reactions are favored above a critical current and below a critical size, which helps to explain the rate capability of LFP nanoparticles. Contrary to other mechanisms, elevated temperatures and currents may enhance battery performance and lifetime by suppressing phase separation. The theory has also been extended to porous electrodes and could be used for battery engineering with multiphase active materials. More broadly, the theory describes nonequilibrium chemical systems at mesoscopic length and time scales, beyond the reach of molecular simulations and bulk continuum models. The reaction rate is consistently defined for inhomogeneous, nonequilibrium states, for example, with phase separation, large electric fields, or mechanical stresses. This research is also potentially applicable to fluid extraction from nanoporous solids, pattern formation in electrophoretic deposition, and electrochemical dynamics in biological cells.

  17. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    NASA Astrophysics Data System (ADS)

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  18. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    PubMed Central

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-01-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions. PMID:27982095

  19. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping.

    PubMed

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-16

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  20. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    NASA Astrophysics Data System (ADS)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  1. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and collecting expense. (a) This classification includes the revenue accounting functions associated with the... Carrier access charge billing and collecting expense classification based on the relative...

  2. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and collecting expense. (a) This classification includes the revenue accounting functions associated with the... Carrier access charge billing and collecting expense classification based on the relative...

  3. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    PubMed

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells.

  4. Charge carrier concentration and temperature dependent recombination in polymer-fullerene solar cells

    NASA Astrophysics Data System (ADS)

    Foertig, A.; Baumann, A.; Rauh, D.; Dyakonov, V.; Deibel, C.

    2009-08-01

    We performed temperature dependent transient photovoltage and photocurrent measurements on poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester bulk heterojuction solar cells. We found a strongly charge carrier concentration and temperature dependent Langevin recombination prefactor. The observed recombination mechanism is discussed in terms of bimolecular recombination. The experimental results were compared with charge carrier extraction by linearly increasing voltage measurements done on the same blend system. We explain the charge carrier dynamics, following an apparent order larger than two, by dynamic trapping of charges in the tail states of the Gaussian density of states.

  5. Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

    SciTech Connect

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-03-16

    We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

  6. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  7. Molecular length dictates the nature of charge carriers in single-molecule junctions of oxidized oligothiophenes.

    PubMed

    Dell, Emma J; Capozzi, Brian; Xia, Jianlong; Venkataraman, Latha; Campos, Luis M

    2015-03-01

    To develop advanced materials for electronic devices, it is of utmost importance to design organic building blocks with tunable functionality and to study their properties at the molecular level. For organic electronic and photovoltaic applications, the ability to vary the nature of charge carriers and so create either electron donors or acceptors is critical. Here we demonstrate that charge carriers in single-molecule junctions can be tuned within a family of molecules that contain electron-deficient thiophene-1,1-dioxide (TDO) building blocks. Oligomers of TDO were designed to increase electron affinity and maintain delocalized frontier orbitals while significantly decreasing the transport gap. Through thermopower measurements we show that the dominant charge carriers change from holes to electrons as the number of TDO units is increased. This results in a unique system in which the charge carrier depends on the backbone length, and provides a new means to tune p- and n-type transport in organic materials.

  8. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  9. Electric field assisted charge carrier photogeneration in poly(spirobifluorene-co-benzothiadiazole)

    SciTech Connect

    Devizis, A.; Serbenta, A.; Peckus, D.; Thiessen, A.; Alle, R.; Meerholz, K.; Hertel, D.; Gulbinas, V.

    2010-10-28

    The dynamics of charge carrier generation in poly(spirobifluorene-co-benzothiadiazole) was investigated by electric field-induced fluorescence quenching and differential absorption measurements. Three different time domains of carrier generation have been identified: an ultrafast phase, a subnanosecond phase, and an entire lifetime phase. The charge generation efficiencies during the first and second phases were found to be almost independent of temperature, being about 25% and 10%, respectively, at an applied electric field of 1.3x10{sup 6} V/cm, while the generation efficiency during the third phase increases from 2% at 80 K to 10% at room temperature. The results of transient spectroscopy measurements and quantum chemical calculations suggest an intramolecular charge transfer for about 1 ps from the alkoxy-substituted fluorene side group to the benzothiadiazole subunit of the main chain. The formation and evolution of the resulting charge transfer states determine the way of charge carrier generation.

  10. Earthquake lights and the stress-activation of positive hole charge carriers in rocks

    USGS Publications Warehouse

    St-Laurent, F.; Derr, J.S.; Freund, F.T.

    2006-01-01

    Earthquake-related luminous phenomena (also known as earthquake lights) may arise from (1) the stress-activation of positive hole (p-hole) charge carriers in igneous rocks and (2) the accumulation of high charge carrier concentrations at asperities in the crust where the stress rates increase very rapidly as an earthquake approaches. It is proposed that, when a critical charge carrier concentration is reached, the p-holes form a degenerated solid state plasma that can break out of the confined rock volume and propagate as a rapidly expanding charge cloud. Upon reaching the surface the charge cloud causes dielectric breakdown at the air-rock interface, i.e. corona discharges, accompanied by the emission of light and high frequency electromagnetic radiation. ?? 2006 Elsevier Ltd. All rights reserved.

  11. Modelling of the charge carrier mobility in disordered linear polymer materials.

    PubMed

    Toman, Petr; Menšík, Miroslav; Bartkowiak, Wojciech; Pfleger, Jiří

    2017-03-15

    We introduced a molecular-scale description of disordered on-chain charge carrier states into a theoretical model of the charge carrier transport in polymer semiconductors. The presented model combines the quantum mechanical approach with a semi-classical solution of the inter-chain charge hopping. Our model takes into account the significant local anisotropy of the charge carrier mobility present in linear conjugated polymers. Contrary to the models based on the effective medium approximation, our approach allowed avoiding artefacts in the calculated concentration dependence of the mobility originated in its problematic configurational averaging. Monte Carlo numerical calculations show that, depending on the degree of the energetic and structural disorder, the charge carrier mobility increases significantly with increasing charge concentration due to trap filling. At high charge carrier concentrations, the effect of the energetic disorder disappears and the mobility decreases slightly due to the lower density of unoccupied states available for the hopping transport. It could explain the experimentally observed mobility degradation in organic field-effect transistors at high gate voltage.

  12. Single charge current in a normal mesoscopic region attached to superconductor leads via a coupled poisson nonequilibrium green function formalism.

    PubMed

    Verrilli, David; Marin, F P; Rangel, Rafael

    2014-01-01

    We study the I-V characteristic of mesoscopic systems or quantum dot (QD) attached to a pair of superconducting leads. Interaction effects in the QD are considered through the charging energy of the QD; that is, the treatment of current transport under a voltage bias is performed within a coupled Poisson nonequilibrium Green function (PNEGF) formalism. We derive the expression for the current in full generality but consider only the regime where transport occurs only via a single particle current. We show for this case and for various charging energies values U 0 and associated capacitances of the QD the effect on the I-V characteristic. Also the influence of the coupling constants on the I-V characteristic is investigated. Our approach puts forward a novel interpretation of experiments in the strong Coulomb regime.

  13. Single Charge Current in a Normal Mesoscopic Region Attached to Superconductor Leads via a Coupled Poisson Nonequilibrium Green Function Formalism

    PubMed Central

    Marin, F. P.

    2014-01-01

    We study the I-V characteristic of mesoscopic systems or quantum dot (QD) attached to a pair of superconducting leads. Interaction effects in the QD are considered through the charging energy of the QD; that is, the treatment of current transport under a voltage bias is performed within a coupled Poisson nonequilibrium Green function (PNEGF) formalism. We derive the expression for the current in full generality but consider only the regime where transport occurs only via a single particle current. We show for this case and for various charging energies values U 0 and associated capacitances of the QD the effect on the I-V characteristic. Also the influence of the coupling constants on the I-V characteristic is investigated. Our approach puts forward a novel interpretation of experiments in the strong Coulomb regime. PMID:24977220

  14. 75 FR 18255 - Passenger Facility Charge Database System for Air Carrier Reporting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-09

    ... Federal Aviation Administration Passenger Facility Charge Database System for Air Carrier Reporting AGENCY... interested parties of the availability of the Passenger Facility Charge (PFC) database system to report PFC... public agency. The FAA has developed a national PFC database system in order to more easily track the...

  15. Effect of charged metal nanoparticles on carrier injection in graphene by an external electric field

    NASA Astrophysics Data System (ADS)

    Matsubara, Manaho; Okada, Susumu

    2017-02-01

    First-principles total-energy calculations clarify the effect of charged Al nanoparticles on carrier accumulation in graphene by an external electric field. Carrier injection in graphene with Al nanoparticles is sensitive to the relative position of the Al nanoparticles to the gate electrode. The nanoparticles sandwiched between graphene and an electrode prevent carrier injection in graphene, while the nanoparticles adsorbed on the opposite side do not affect the Dirac point shift, resulting in successive carrier injection in graphene. Because of the density of the state difference, the capacitance of graphene with Al nanoparticle also depends on the electrode position.

  16. Curl flux, coherence, and population landscape of molecular systems: nonequilibrium quantum steady state, energy (charge) transport, and thermodynamics.

    PubMed

    Zhang, Zhedong; Wang, Jin; Zhang, Z D; Wang, J

    2014-06-28

    We established a theoretical framework in terms of the curl flux, population landscape, and coherence for non-equilibrium quantum systems at steady state, through exploring the energy and charge transport in molecular processes. The curl quantum flux plays the key role in determining transport properties and the system reaches equilibrium when flux vanishes. The novel curl quantum flux reflects the degree of non-equilibriumness and the time-irreversibility. We found an analytical expression for the quantum flux and its relationship to the environmental pumping (non-equilibriumness quantified by the voltage away from the equilibrium) and the quantum tunneling. Furthermore, we investigated another quantum signature, the coherence, quantitatively measured by the non-zero off diagonal element of the density matrix. Populations of states give the probabilities of individual states and therefore quantify the population landscape. Both curl flux and coherence depend on steady state population landscape. Besides the environment-assistance which can give dramatic enhancement of coherence and quantum flux with high voltage at a fixed tunneling strength, the quantum flux is promoted by the coherence in the regime of small tunneling while reduced by the coherence in the regime of large tunneling, due to the non-monotonic relationship between the coherence and tunneling. This is in contrast to the previously found linear relationship. For the systems coupled to bosonic (photonic and phononic) reservoirs the flux is significantly promoted at large voltage while for fermionic (electronic) reservoirs the flux reaches a saturation after a significant enhancement at large voltage due to the Pauli exclusion principle. In view of the system as a quantum heat engine, we studied the non-equilibrium thermodynamics and established the analytical connections of curl quantum flux to the transport quantities such as energy (charge) transfer efficiency, chemical reaction efficiency, energy

  17. Slower carriers limit charge generation in organic semiconductor light-harvesting systems

    PubMed Central

    Stolterfoht, Martin; Armin, Ardalan; Shoaee, Safa; Kassal, Ivan; Burn, Paul; Meredith, Paul

    2016-01-01

    Blends of electron-donating and -accepting organic semiconductors are widely used as photoactive materials in next-generation solar cells and photodetectors. The yield of free charges in these systems is often determined by the separation of interfacial electron–hole pairs, which is expected to depend on the ability of the faster carrier to escape the Coulomb potential. Here we show, by measuring geminate and non-geminate losses and key transport parameters in a series of bulk-heterojunction solar cells, that the charge-generation yield increases with increasing slower carrier mobility. This is in direct contrast with the well-established Braun model where the dissociation rate is proportional to the mobility sum, and recent models that underscore the importance of fullerene aggregation for coherent electron propagation. The behaviour is attributed to the restriction of opposite charges to different phases, and to an entropic contribution that favours the joint separation of both charge carriers. PMID:27324720

  18. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    PubMed

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V

  19. Charge-carrier dynamics in hybrid metal halide perovskites (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Milot, Rebecca L.; Rehman, Waqaas; Eperon, Giles E.; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2016-09-01

    Hybrid metal halide perovskites are attractive components for many optoelectronic applications due to a combination of their superior charge transport properties and relative ease of fabrication. A complete understanding of the nature of charge transport in these materials is therefore essential for current and future device development. We have evaluated two systems - the standard perovskite methylammonium lead triiodide (CH3NH3PbI3) and a series of mixed-iodide/bromide formamidinium lead perovskites - in an effort to determine what effect structural and chemical composition have on optoelectronic properties including mobility, charge-carrier recombination dynamics, and charge-carrier diffusion length. The photoconductivity in thin films of CH3NH3PbI3was investigated from 8 K to 370 K across three structural phases [1]. While the monomolecular charge-carrier recombination rate was found to increase with rising temperature indicating a mechanism dominated by ionized impurity mediated recombination, the bimolecular rate constant decreased with rising temperature as charge-carrier mobility declined. The Auger rate constant was highly phase specific, suggesting a strong dependence on electronic band structure. For the mixed-halide formamidinuim lead bromide-iodide perovskites, HC(NH2)2Pb(BryI1-y)3, bimolecular and Auger charge-carrier recombination rate constants strongly correlated with bromide content, which indicated a link with electronic structure [2]. Although HC(NH2)2PbBr3 and HC(NH2)2PbI3 exhibited high charge-carrier mobilities and diffusion lengths exceeding 1 μm, mobilities for mixed Br/I perovskites were all lower as a result of crystalline phase disorder.

  20. Picosecond charge transport in rutile at high carrier densities studied by transient terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Zajac, V.; Němec, H.; Kužel, P.

    2016-09-01

    We study terahertz photoconductivity of a rutile single crystal between 10 and 300 K under strong photoexcitation by femtosecond pulses at 266 nm. A marked dependence of the carrier mobility on the carrier density is observed leading to highly complex transport phenomena on a picosecond time scale. We develop a general model of carrier photoconductive response in the case of time dependent inhomogeneous distribution of carrier density and mobility. This allows us to assess an important role of both electrons and holes in the response of photoexcited rutile. At low temperatures, the carrier mobility is initially reduced due to the electron-hole scattering and increases by one order of magnitude upon ambipolar diffusion of the carriers into deeper regions of the sample. At room temperature, contributions of transient hot optical phonons and/or of midinfrared polaron excitations with charge-density-dependent dielectric strength emerge in the photoconductivity spectra.

  1. Nonequilibrium charge transport in an interacting open system: Two-particle resonance and current asymmetry

    NASA Astrophysics Data System (ADS)

    Roy, Dibyendu; Soori, Abhiram; Sen, Diptiman; Dhar, Abhishek

    2009-08-01

    We use the Lippman-Schwinger scattering theory to study nonequilibrium electron transport through an interacting open quantum dot. The two-particle current is evaluated exactly while we use perturbation theory to calculate the current when the leads are Fermi liquids at different chemical potentials. We find an interesting two-particle resonance induced by the interaction and obtain criteria to observe it when a small bias is applied across the dot. Finally, for a system without spatial inversion symmetry, we find that the two-particle current is quite different depending on whether the electrons are incident from the left or the right lead.

  2. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    NASA Astrophysics Data System (ADS)

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; Moisan, Camille; Larramona, Gerardo; Dennler, Gilles; Handwerg, Martin; Fischer, Saskia F.; Eichberger, Rainer; Unold, Thomas

    2016-11-01

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V-1 s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

  3. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    SciTech Connect

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; Moisan, Camille; Larramona, Gerardo; Dennler, Gilles; Handwerg, Martin; Fischer, Saskia F.; Eichberger, Rainer; Unold, Thomas

    2016-11-03

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2V-1s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

  4. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    DOE PAGES

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; ...

    2016-11-03

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2V-1s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which weremore » deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.« less

  5. Probing charge transfer and hot carrier dynamics in organic solar cells with terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Cunningham, Paul D.; Lane, Paul A.; Melinger, Joseph S.; Esenturk, Okan; Heilweil, Edwin J.

    2016-04-01

    Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C60) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C60 were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C60, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C60 followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C60, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

  6. Xanthan hydrogel films: molecular conformation, charge density and protein carriers.

    PubMed

    Bueno, Vânia Blasques; Petri, Denise Freitas Siqueira

    2014-01-30

    In this article the molecular conformation of xanthan chains in hydrogel films was investigated by means of circular dichroism, showing substantial differences between xanthan hydrogel prepared in the absence (XNT) and in the presence of citric acid (XCA). The xanthan chains in XNT hydrogels films presented ordered conformation (helixes), while in XCA they were in the disordered conformation (coils), exposing a larger number of carboxylate groups than XNT. The large charge density in XCA hydrogels was evidenced by their behavior under variable ionic strength. Studies about the application of XNT and XCA for loading and delivering of bovine serum albumin (BSA) and lysozyme (LYZ) showed that both events are controlled by hydrogels and proteins net charge, which can be triggered by pH. The preservation of LYZ native conformation after hydrogel loading explained the substantial bactericidal activity of LYZ loaded hydrogels and enables their use as active wound dressings.

  7. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-07

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds.

  8. Theory of non-equilibrium critical phenomena in three-dimensional condensed systems of charged mobile nanoparticles.

    PubMed

    Kuzovkov, V N; Zvejnieks, G; Kotomin, E A

    2014-07-21

    A study of 3d electrostatic self-assembly (SA) in systems of charged nanoparticles (NPs) is one of the most difficult theoretical problems. In particular, the limiting case of negligible or very low polar media (e.g. salt) concentration, where the long-range NP interactions cannot be reduced to commonly used effective short-range (Yukawa) potentials, remains unstudied. Moreover, the present study has demonstrated that unlike the Debye-Hückel theory, a complete screening of the charges in SA kinetics (dynamic SA) is not always possible. Generally speaking, one has to take into account implicitly how each NP interacts with all other NPs (the true long-range interactions). Traditional theoretical methods allow us to monitor such electrostatic 3d system kinetics only for very short times, which is far from sufficient for understanding the dynamic SA. In this paper, combining an integrated analytical approach (the non-linear integro-differential kinetic equation for correlation functions) and reverse Monte Carlo in the 3d case, we have obtained a self-consistent solution of this challenging problem. We demonstrate, in particular, the existence of critical points and critical phenomena in the non-equilibrium kinetics in a 3d system of oppositely charged mobile NPs.

  9. Near-field control and imaging of free charge carrier variations in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Berweger, Samuel; Blanchard, Paul T.; Brubaker, Matt D.; Coakley, Kevin J.; Sanford, Norman A.; Wallis, Thomas M.; Bertness, Kris A.; Kabos, Pavel

    2016-02-01

    Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here, we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW with strongly localized current when positioned over the wire vertices. These results suggest that the strong variations in electronic properties observed within NWs have significant implications for device design and may lead to new paths to optimization.

  10. Influence of NO2 molecule adsorption on free charge carriers and spin centers in porous silicon

    NASA Astrophysics Data System (ADS)

    Konstantinova, E. A.; Osminkina, L. A.; Sharov, C. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2005-06-01

    The effect of nitrogen dioxide (NO2) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond (Pb1-center) density rises with increasing NO2 pressure (PNO2) while free charge carrier concentration depends on PNO2 nonmonotonically. The experimental results are explained by a microscopic model taking into account both the formation of Pb1+ -(NO2)- donor-acceptor pairs and NO2-induced oxidation of Si nanocrystal surfaces.

  11. Dynamics of charge transfer: Rate processes formulated with nonequilibrium Green's functions

    SciTech Connect

    Yeganeh, Sina; Ratner, Mark A.; Mujica, Vladimiro

    2007-04-28

    The authors examine the connection between electron transport under bias in a junction and nonadiabatic intramolecular electron transfer (ET). It is shown that under certain assumptions it is possible to define a stationary current that allows the computation of the intramolecular transfer rate using the same formalism that is employed in the description of transport. They show that the nonequilibrium Green's function formalism of quantum transport can be used to calculate the ET rate. The formal connection between electron transport and electron transfer is made, and they work out the simple case of an electronic level coupled to a vibrational mode representing a thermal bath and show that the result is the same as expected from a Fermi golden rule treatment, and in the high-temperature limit yields the Marcus electron transfer theory. The usefulness of this alternative formulation of rates is discussed.

  12. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge.

    PubMed

    Arzani, Gelareh; Haeri, Azadeh; Daeihamed, Marjan; Bakhtiari-Kaboutaraki, Hamid; Dadashzadeh, Simin

    2015-01-01

    Carvedilol (CRV) is an antihypertensive drug with both alpha and beta receptor blocking activity used to preclude angina and cardiac arrhythmias. To overcome the low, variable oral bioavailability of CRV, niosomal formulations were prepared and characterized: plain niosomes (without bile salts), bile salt-enriched niosomes (bilosomes containing various percentages of sodium cholate or sodium taurocholate), and charged niosomes (negative, containing dicetyl phosphate and positive, containing hexadecyl trimethyl ammonium bromide). All formulations were characterized in terms of encapsulation efficiency, size, zeta potential, release profile, stability, and morphology. Various formulations were administered orally to ten groups of Wistar rats (n=6 per group). The plasma levels of CRV were measured by a validated high-performance liquid chromatography (HPLC) method and pharmacokinetic properties of different formulations were characterized. Contribution of lymphatic transport to the oral bioavailability of niosomes was also investigated using a chylomicron flow-blocking approach. Of the bile salt-enriched vesicles examined, bilosomes containing 20% sodium cholate (F2) and 30% sodium taurocholate (F5) appeared to give the greatest enhancement of intestinal absorption. The relative bioavailability of F2 and F5 formulations to the suspension was estimated to be 1.84 and 1.64, respectively. With regard to charged niosomes, the peak plasma concentrations (Cmax) of CRV for positively (F7) and negatively charged formulations (F10) were approximately 2.3- and 1.7-fold higher than after a suspension. Bioavailability studies also revealed a significant increase in extent of drug absorption from charged vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway

  13. Charge transfer polarisation wave and carrier pairing in the high T(sub c) copper oxides

    NASA Technical Reports Server (NTRS)

    Chakraverty, B. K.

    1990-01-01

    The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.

  14. Recombination in liquid filled ionisation chambers with multiple charge carrier species: Theoretical and numerical results

    NASA Astrophysics Data System (ADS)

    Aguiar, P.; González-Castaño, D. M.; Gómez, F.; Pardo-Montero, J.

    2014-10-01

    Liquid-filled ionisation chambers (LICs) are used in radiotherapy for dosimetry and quality assurance. Volume recombination can be quite important in LICs for moderate dose rates, causing non-linearities in the dose rate response of these detectors, and needs to be corrected for. This effect is usually described with Greening and Boag models for continuous and pulsed radiation respectively. Such models assume that the charge is carried by two different species, positive and negative ions, each of those species with a given mobility. However, LICs operating in non-ultrapure mode can contain different types of electronegative impurities with different mobilities, thus increasing the number of different charge carriers. If this is the case, Greening and Boag models can be no longer valid and need to be reformulated. In this work we present a theoretical and numerical study of volume recombination in parallel-plate LICs with multiple charge carrier species, extending Boag and Greening models. Results from a recent publication that reported three different mobilities in an isooctane-filled LIC have been used to study the effect of extra carrier species on recombination. We have found that in pulsed beams the inclusion of extra mobilities does not affect volume recombination much, a behaviour that was expected because Boag formula for charge collection efficiency does not depend on the mobilities of the charge carriers if the Debye relationship between mobilities and recombination constant holds. This is not the case in continuous radiation, where the presence of extra charge carrier species significantly affects the amount of volume recombination.

  15. Electrostatic Charge Carrier Injection into the Charge-Ordered Organic Material α-(BEDT-TTF)2I3

    NASA Astrophysics Data System (ADS)

    Kimata, Motoi; Ishihara, Takuma; Tajima, Hiroyuki

    2012-07-01

    We have fabricated a field effect transistor structure using the charge-ordered (CO) organic material α-(BEDT-TTF)2I3 to investigate the effects of electrostatic carrier injection. We have observed both n-type and bipolar behaviors in the CO state, whereas, previously, only n-type characteristics were reported. The present results indicate that the transfer characteristics for a negative gate voltage, i.e., hole transport characteristics, are highly dependent on the interface conditions between α-(BEDT-TTF)2I3 and the electrodes and/or gate insulator. In addition, the activation energy of the CO state is essentially independent of VSG. This result suggests the robustness of the CO state to electrostatic charge carrier injection.

  16. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    PubMed

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  17. Analysis of Charge Carrier Transport in Organic Photovoltaic Thin Films and Nanoparticle Assemblies

    NASA Astrophysics Data System (ADS)

    Han, Xu; Maroudas, Dimitrios

    2014-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological charge carrier transport models. These transient drift-diffusion-reaction models describe electron and hole transport and their trapping, detrapping, and recombination self-consistently with Poisson's equation for the electric field in the active layer. We predict transient currents in devices with active layers composed of P3HT, PCBM, and PBTDV polymers, as well as donor-acceptor blends. The propensity of the material to generate charge, zero-field carrier mobilities, as well as trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental data of photocurrent evolution. We have investigated effects of material structure and morphology by comparing the fitting outcomes for active layers consisting of both thin films and nanoparticle assemblies. We have also analyzed the effect on charge carrier transport of nanoparticle surface characteristics, as well as of thermal annealing of both thin-film and nanoparticle-assembly active layers. The model predictions provide valuable input toward synthesis of new nanoparticle assemblies that lead to improved OPV device performance.

  18. Mapping the spatial distribution of charge carriers in quantum-confined heterostructures

    PubMed Central

    Smith, Andrew M.; Lane, Lucas A.; Nie, Shuming

    2014-01-01

    Quantum-confined nanostructures are considered ‘artificial atoms’ because the wavefunctions of their charge carriers resemble those of atomic orbitals. For multiple-domain heterostructures, however, carrier wavefunctions are more complex and still not well understood. We have prepared a unique series of cation-exchanged HgxCd1−xTe quantum dots (QDs) and seven epitaxial core–shell QDs and measured their first and second exciton peak oscillator strengths as a function of size and chemical composition. A major finding is that carrier locations can be quantitatively mapped and visualized during shell growth or cation exchange simply using absorption transition strengths. These results reveal that a broad range of quantum heterostructures with different internal structures and band alignments exhibit distinct carrier localization patterns that can be used to further improve the performance of optoelectronic devices and enhance the brightness of QD probes for bioimaging. PMID:25080298

  19. Charge Carrier Trapping at Surface Defects of Perovskite Solar Cell Absorbers: A First-Principles Study.

    PubMed

    Uratani, Hiroki; Yamashita, Koichi

    2017-02-16

    The trapping of charge carriers at defects on surfaces or grain boundaries is detrimental for the performance of perovskite solar cells (PSCs). For example, it is the main limiting factor for carrier lifetime. Moreover, it causes hysteresis in the current-voltage curves, which is considered to be a serious issue for PSCs' operation. In this work, types of surface defects responsible for carrier trapping are clarified by a comprehensive first-principles investigation into surface defects of tetragonal CH3NH3PbI3 (MAPbI3). Considering defect formation energetics, it is proposed that a Pb-rich condition is preferred to an I-rich one; however, a moderate condition might possibly be the best choice. Our result paves the way for improving the performance of PSCs through a rational strategy of suppressing carrier trapping at surface defects.

  20. Charge Carrier Hopping Dynamics in Homogeneously Broadened PbS Quantum Dot Solids.

    PubMed

    Gilmore, Rachel H; Lee, Elizabeth M Y; Weidman, Mark C; Willard, Adam P; Tisdale, William A

    2017-02-08

    Energetic disorder in quantum dot solids adversely impacts charge carrier transport in quantum dot solar cells and electronic devices. Here, we use ultrafast transient absorption spectroscopy to show that homogeneously broadened PbS quantum dot arrays (σhom(2):σinh(2) > 19:1, σinh/kBT < 0.4) can be realized if quantum dot batches are sufficiently monodisperse (δ ≲ 3.3%). The homogeneous line width is found to be an inverse function of quantum dot size, monotonically increasing from ∼25 meV for the largest quantum dots (5.8 nm diameter/0.92 eV energy) to ∼55 meV for the smallest (4.1 nm/1.3 eV energy). Furthermore, we show that intrinsic charge carrier hopping rates are faster for smaller quantum dots. This finding is the opposite of the mobility trend commonly observed in device measurements but is consistent with theoretical predictions. Fitting our data to a kinetic Monte Carlo model, we extract charge carrier hopping times ranging from 80 ps for the smallest quantum dots to over 1 ns for the largest, with the same ethanethiol ligand treatment. Additionally, we make the surprising observation that, in slightly polydisperse (δ ≲ 4%) quantum dot solids, structural disorder has a greater impact than energetic disorder in inhibiting charge carrier transport. These findings emphasize how small improvements in batch size dispersity can have a dramatic impact on intrinsic charge carrier hopping behavior and will stimulate further improvements in quantum dot device performance.

  1. Strontium Insertion in Methylammonium Lead Iodide: Long Charge Carrier Lifetime and High Fill-Factor Solar Cells

    SciTech Connect

    Pérez-del-Rey, Daniel; Savenije, Tom J.; Nordlund, Dennis; Schulz, Philip; Berry, Joseph J.; Sessolo, Michele

    2016-09-22

    The addition of Sr2+ in CH3NH3PbI3 perovskite films enhances the charge carrier collection efficiency of solar cells leading to very high fill factors, up to 85%. The charge carrier lifetime of Sr2+-containing perovskites is in excess of 40 us, longer than those reported for perovskite single crystals.

  2. Modification of electrostatic charge on inhaled carrier lactose particles by addition of fine particles.

    PubMed

    Bennett, F S; Carter, P A; Rowley, G; Dandiker, Y

    1999-01-01

    Triboelectrification affects particle adhesion and agglomeration and hence the formulation, manufacture, and use of dry powder inhaler (DPI) devices. Electrostatic charge measurement of two component mixes of spray-dried or crystalline lactose fine particles (< 10 microns) 0, 5, 10, 15, 20, and 30% w/w with spray-dried or crystalline lactose 63-90 microns, respectively, has been undertaken using a system incorporating pneumatic transport of the mixed powders to a stainless steel cyclone charging device. The magnitude of charge on the mixes was shown to decrease with increased fine particle content, and there was no significant difference in charge for each concentration between spray-dried and crystalline lactose. Both the variation of charge and powder adhesion to the cyclone surface increased with increase in fine particle content. The proportion of fine particles in carrier systems in DPIs may thus have an important role where triboelectrification is involved.

  3. A molecule to detect and perturb the confinement of charge carriers in quantum dots.

    PubMed

    Frederick, Matthew T; Amin, Victor A; Cass, Laura C; Weiss, Emily A

    2011-12-14

    This paper describes unprecedented bathochromic shifts (up to 970 meV) of the optical band gaps of CdS, CdSe, and PbS quantum dots (QDs) upon adsorption of an organic ligand, phenyldithiocarbamate (PTC), and the use of PTC to map the quantum confinement of specific charge carriers within the QDs as a function of their radius. For a given QD material and physical radius, R, the magnitude of the increase in apparent excitonic radius (ΔR) upon delocalization by PTC directly reflects the degree of quantum confinement of one or both charge carriers. The plots of ΔR vs R for CdSe and CdS show that exciton delocalization by PTC occurs specifically through the excitonic hole. Furthermore, the plot for CdSe, which spans a range of R over multiple confinement regimes for the hole, identifies the radius (R∼1.9 nm) at which the hole transitions between regimes of strong and intermediate confinement. This demonstration of ligand-induced delocalization of a specific charge carrier is a first step toward eliminating current-limiting resistive interfaces at organic-inorganic junctions within solid-state hybrid devices. Facilitating carrier-specific electronic coupling across heterogeneous interfaces is especially important for nanostructured devices, which comprise a high density of such interfaces.

  4. Spin and charge pumping in magnetic tunnel junctions with precessing magnetization: A nonequilibrium Green function approach

    NASA Astrophysics Data System (ADS)

    Chen, Son-Hsien; Chang, Ching-Ray; Xiao, John Q.; Nikolić, Branislav K.

    2009-02-01

    We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F|I|N or F|I|F ( F -ferromagnet; I -insulator; N -normal metal) multilayers of nanoscale thickness attached to two normal-metal electrodes with no applied bias voltage between them. Both simple one-dimensional model, consisting of a single precessing spin and a potential barrier as the “sample,” and realistic three-dimensional devices are investigated. In the rotating reference frame, where the magnetization appears to be static, these junctions are mapped onto a four-terminal dc circuit whose effectively half-metallic ferromagnetic electrodes are biased by the frequency ℏω/e of microwave radiation driving magnetization precession at the ferromagnetic resonance (FMR) conditions. We show that pumped spin current in F|I|F junctions, diminished behind the tunnel barrier and increased in the opposite direction, is filtered into charge current by the second F layer to generate dc pumping voltage of the order of ˜1μV (at FMR frequency ˜10GHz ) in an open circuit. In F|I|N devices, several orders of magnitude smaller charge current and the corresponding dc voltage appear concomitantly with the pumped spin current due to barrier induced asymmetry in the transmission coefficients connecting the four electrodes in the rotating-frame picture of pumping.

  5. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, P.

    1996-06-25

    An ionization detector electrode and signal subtraction apparatus and method provide at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector. 9 figs.

  6. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, Paul

    1996-01-01

    An ionization detector electrode and signal subtraction apparatus and method provides at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector.

  7. Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

    SciTech Connect

    Pastor, A. A.; Serdobintsev, P. Yu.; Chaldyshev, V. V.

    2012-05-15

    The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecular-beam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump-probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 {+-} 35) fs.

  8. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 41 Public Contracts and Property Management 4 2012-07-01 2012-07-01 false How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and...

  9. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  10. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  11. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  12. The kinetics of the bimolecular A+B --> 0 reaction in condensed matter: Effects of non-equilibrium charge screening

    NASA Astrophysics Data System (ADS)

    Kuzovkov, V. N.; Kotomin, E. A.; von Niessen, W.

    1996-12-01

    The kinetics of the bimolecular A+B→0 reaction between charged reactants is studied in two dimensions, i.e., on a surface. The theory is based on the Kirkwood superposition approximation for three-particle densities and the self-consistent treatment of the electrostatic interactions defined by the non-uniform spatial distribution of similar and dissimilar reactants. Special attention is paid to pattern formation and many-particle effects arising from reaction-induced formation of loose domains containing similar reactants only. It is shown that the critical exponent α characterizing the algebraic concentration decay law, n(t)∝t-α, differs strongly between symmetric (DA=DB) and asymmetric (DA=0) reactant mobilities. This effect is abnormal from the point of view of standard chemical kinetics. It arises directly from the specific spatial distribution in the system as in ``raisins A in a dough B.'' At long reaction times the asymptotics of the interaction potentials is of non-equilibrium type at large relative distances. The accumulation kinetics in the presence of a permanent source is studied. Results of the microscopic formalism are compared with a previous mesoscopic theory.

  13. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  14. Charge carrier transport and photogeneration in P3HT:PCBM photovoltaic blends.

    PubMed

    Laquai, Frédéric; Andrienko, Denis; Mauer, Ralf; Blom, Paul W M

    2015-06-01

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano-fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10(-4) cm(2) V(-1) s(-1) after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea-sured in P3HT:PCBM photovoltaic devices.

  15. Base Sequence Effects on Charge Carrier Generation in Dna:. a Theoretical Study

    NASA Astrophysics Data System (ADS)

    Starikov, E. B.; Lewis, J. P.; Sankey, O. F.

    We have thoroughly analyzed the electronic structure of stacked DNA Watson-Crick (WC) base pair dimers using ab initio Hartree-Fock and semiempirical Hartree-Fock-configuration-interaction quantum chemistry. We consider all the possible base compositions and sequences at the nucleoside level in vacuo. The results show that in such systems charge carrier generation could in principle be possible via charge transfer excitons, which turn out to dominate the first excited electronic states of the WC base pairs and their stacked dimers, and this process is largely sequence- and conformation-dependent. Possible consequences of this result for polymeric DNA duplexes are discussed.

  16. Explicitly Solvable Model of the Charge Carriers' Phenomena in Isotropic Conducting Crystals

    NASA Astrophysics Data System (ADS)

    Budzak, Yaroslav S.; Wacławski, Tadeusz

    2017-01-01

    In this paper, a theoretical analysis of the kinetic properties of the isotropic conducting crystals is presented. The general formulas for these kinetic properties are expressed in terms of the Fermi integrals. These integrals were obtained using methods of statistical ensembles with varying number of particles and the Gibbs's grand canonical distribution. The determination of the scattering function and the exploration of its relation with the mobility of the current carriers inside these crystals have been made. Together with the results of theoretical analysis of the scattering function and its relation with the current carriers' mobility, these formulas constitute the mathematical model of the charge carriers' transport phenomena in conducting crystals (where a non-parabolic energy spectrum is described by Kane's formula) and provide algorithms for the calculation of these properties.

  17. Explicitly Solvable Model of the Charge Carriers' Phenomena in Isotropic Conducting Crystals

    NASA Astrophysics Data System (ADS)

    Budzak, Yaroslav S.; Wacławski, Tadeusz

    2017-04-01

    In this paper, a theoretical analysis of the kinetic properties of the isotropic conducting crystals is presented. The general formulas for these kinetic properties are expressed in terms of the Fermi integrals. These integrals were obtained using methods of statistical ensembles with varying number of particles and the Gibbs's grand canonical distribution. The determination of the scattering function and the exploration of its relation with the mobility of the current carriers inside these crystals have been made. Together with the results of theoretical analysis of the scattering function and its relation with the current carriers' mobility, these formulas constitute the mathematical model of the charge carriers' transport phenomena in conducting crystals (where a non-parabolic energy spectrum is described by Kane's formula) and provide algorithms for the calculation of these properties.

  18. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier.

    PubMed

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-06-04

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based "rocking chair" type battery.

  19. Charge carrier mobility in organic molecular materials probed by electromagnetic waves.

    PubMed

    Seki, Shu; Saeki, Akinori; Sakurai, Tsuneaki; Sakamaki, Daisuke

    2014-06-21

    Charge carrier mobility is an essential parameter providing control over the performance of semiconductor devices fabricated using a variety of organic molecular materials. Recent design strategies toward molecular materials have been directed at the substitution of amorphous silicon-based semiconductors; accordingly, numerous measurement techniques have been designed and developed to probe the electronic conducting nature of organic materials bearing extremely wide structural variations in comparison with inorganic and/or metal-oxide semiconductor materials. The present perspective highlights the evaluation methodologies of charge carrier mobility in organic materials, as well as the merits and demerits of techniques examining the feasibility of organic molecules, crystals, and supramolecular assemblies in semiconductor applications. Beyond the simple substitution of amorphous silicon, we have attempted to address in this perspective the systematic use of measurement techniques for future development of organic molecular semiconductors.

  20. The Effective Mass of a Charged Carrier in a Nonpolar Liquid:. Applications to Superfluid Helium

    NASA Astrophysics Data System (ADS)

    Varlamov, Andrei; Chikina, Ioulia; Shikin, Valeriy

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasi-particle can be introduced without Atkins's idea about the solidification of liquid He4 in the close vicinity of an ion (the so-called “snowball” model). Moreover, in addition to generalization of the Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal fluid contribution divergency and the way of corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  1. Effective mass of a charged carrier in a nonpolar liquid: Snowball effect in superfluid helium

    NASA Astrophysics Data System (ADS)

    Chikina, I.; Shikin, V.; Varlamov, A. A.

    2007-05-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasiparticle can be introduced without Atkins’s idea about the solidification of liquid He4 in the close vicinity of an ion (the so-called “snowball” model). Moreover, in addition to the generalization of Atkins’s model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal-fluid contribution divergency and the way of the corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  2. The Effective Mass of a Charged Carrier in a Nonpolar Liquid:. Applications to Superfluid Helium

    NASA Astrophysics Data System (ADS)

    Varlamov, Andrei; Chikina, Ioulia; Shikin, Valeriy

    2009-12-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasi-particle can be introduced without Atkins's idea about the solidification of liquid He4 in the close vicinity of an ion (the so-called "snowball" model). Moreover, in addition to generalization of the Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal fluid contribution divergency and the way of corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  3. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    PubMed Central

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-01-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery. PMID:26043147

  4. Effective mass of a charged carrier in a nonpolar liquid: Snowball effect in superfluid helium

    SciTech Connect

    Chikina, I.; Varlamov, A. A.

    2007-05-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasiparticle can be introduced without Atkins's idea about the solidification of liquid He{sup 4} in the close vicinity of an ion (the so-called ''snowball'' model). Moreover, in addition to the generalization of Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal-fluid contribution divergency and the way of the corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  5. Phenol photodegradation on platinized-TiO2 photocatalysts related to charge-carrier dynamics.

    PubMed

    Emilio, Carina A; Litter, Marta I; Kunst, Marinus; Bouchard, Michel; Colbeau-Justin, Christophe

    2006-04-11

    Three commercial TiO2 compounds (Degussa P25, Sachtleben UV100, and Millenium PC50) and their platinized forms have been studied by the time-resolved microwave conductivity (TRMC) method to follow their charge-carrier dynamics and to relate it to the photocatalytic activity for phenol degradation in TiO2 aqueous suspensions. The degradation reaction has been studied in detail, following the time evolution of the concentration of phenol and its intermediates by liquid chromatography. The results show that platinization has a distinct influence on the commercial compounds, decreasing globally the activity of P25 and increasing the activity of PC50 and UV100. An influence of charge-carrier lifetimes on the photoactivity of pure and platinized TiO2 samples has been evidenced.

  6. Spin fluctuations of nonequilibrium electrons and excitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Glazov, M. M.

    2016-03-01

    Effects that are related to deviations from thermodynamic equilibrium have a special place in modern physics. Among these, nonequilibrium phenomena in quantum systems attract the highest interest. The experimental technique of spin-noise spectroscopy has became quite widespread, which makes it possible to observe spin fluctuations of charge carriers in semiconductors under both equilibrium and nonequilibrium conditions. This calls for the development of a theory of spin fluctuations of electrons and electron-hole complexes for nonequilibrium conditions. In this paper, we consider a range of physical situations where a deviation from equilibrium becomes pronounced in the spin noise. A general method for the calculation of electron and exciton spin fluctuations in a nonequilibrium state is proposed. A short review of the theoretical and experimental results in this area is given.

  7. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    PubMed Central

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-01-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed. PMID:26548567

  8. Role of Adsorbed Water on Charge Carrier Dynamics in Photoexcited TiO2

    PubMed Central

    2017-01-01

    Overall photocatalytic water splitting is one of the most sought after processes for sustainable solar-to-chemical energy conversion. The efficiency of this process strongly depends on charge carrier recombination and interaction with surface adsorbates at different time scales. Here, we investigated how hydration of TiO2 P25 affects dynamics of photogenerated electrons at the millisecond to minute time scale characteristic for chemical reactions. We used rapid scan diffuse-reflectance infrared Fourier transform spectroscopy (DRIFTS). The decay of photogenerated electron absorption was substantially slower in the presence of associated water. For hydrated samples, the charge carrier recombination rates followed an Arrhenius-type behavior in the temperature range of 273–423 K; these became temperature-independent when the material was dehydrated at temperatures above 423 K or cooled below 273 K. A DFT+U analysis revealed that hydrogen bonding with adsorbed water stabilizes surface-trapped holes at anatase TiO2(101) facet and lowers the barriers for hole migration. Hence, hole mobility should be higher in the hydrated material than in the dehydrated system. This demonstrates that adsorbed associated water can efficiently stabilize photogenerated charge carriers in nanocrystalline TiO2 and suppress their recombination at the time scale up to minutes.

  9. Non-equilibrium Dirac carrier dynamics in graphene investigated with time- and angle-resolved photoemission spectroscopy.

    PubMed

    Gierz, Isabella; Link, Stefan; Starke, Ulrich; Cavalleri, Andrea

    2014-01-01

    We have used time- and angle-resolved photoemission spectroscopy (tr-ARPES) to assess the influence of many-body interactions on the Dirac carrier dynamics in graphene. From the energy-dependence of the measured scattering rates we directly determine the imaginary part of the self-energy, visualizing the existence of a relaxation bottleneck associated with electron-phonon coupling. A comparison with static line widths obtained by high-resolution ARPES indicates that the dynamics of photo-excited carriers in graphene are solely determined by the equilibrium self-energy. Furthermore, the subtle interplay of different many-body interactions in graphene may allow for carrier multiplication, where the absorption of a single photon generates more than one electron-hole pair via impact ionization. We find that, after photo-excitation, the number of carriers in the conduction band along the ΓK-direction keeps increasing for about 40 fs after the pump pulse is gone. A definite proof of carrier multiplication in graphene, however, requires a more systematic study, carefully taking into account the contribution of momentum relaxation on the measured rise time.

  10. Equilibrium and non-equilibrium charge-state distributions of 2 MeV/u sulfur ions passing through carbon foils

    NASA Astrophysics Data System (ADS)

    Imai, M.; Sataka, M.; Kawatsura, K.; Takahiro, K.; Komaki, K.; Shibata, H.; Sugai, H.; Nishio, K.

    2009-08-01

    Both equilibrium and non-equilibrium charge-state distributions for 2.0 MeV/u sulfur ions after passing through carbon foils were studied experimentally. For the equilibrium charge-state distribution, incident ions of S 7+, S 12+, S 14+ and S 16+ were injected into carbon foils 54, 98, 150 and 200 μg/cm 2 in thickness, whereas for the non-equilibrium distributions, new measurements for S 15+ and S 16+ incidences were made through carbon foils of 0.9-10 μg/cm 2 to supplement our previous experiments regarding S 6+-S 14+ incidences [M. Imai, M. Sataka, K. Kawatsura, K. Takahiro, K. Komaki, H. Shibata, H. Sugai, K. Nishio, Nucl. Instr. and Meth. B 230 (2005) 63; M. Imai, M. Sataka, K. Kawatsura, K. Takahiro, K. Komaki, H. Shibata, H. Sugai, K. Nishio, Nucl. Instr. and Meth. B 256 (2007) 11]. Mean charge states for S 6+-S 14+ incidences as functions of the penetration thickness merged at 6.9 μg/cm 2 and changed together until reaching equilibrium at around 100 μg/cm 2, while those for S 15+ and S 16+ incidences took different paths to equilibrium, which was also the case for distribution widths for S 6+-S 14+, S 15+ and S 16+ incidences. An equilibrium mean charge state of 12.68 and distribution width of 1.11 were attained with equilibrium charge distributions between 6+ and 16+.

  11. Excited state and charge-carrier dynamics in perovskite solar cell materials.

    PubMed

    Ponseca, Carlito S; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

    2016-02-26

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  12. Excited state and charge-carrier dynamics in perovskite solar cell materials

    NASA Astrophysics Data System (ADS)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  13. Polymer-Free Carbon Nanotube Thermoelectrics with Improved Charge Carrier Transport and Power Factor

    SciTech Connect

    Norton-Baker, Brenna; Ihly, Rachelle; Gould, Isaac E.; Avery, Azure D.; Owczarczyk, Zbyslaw R.; Ferguson, Andrew J.; Blackburn, Jeffrey L.

    2016-12-09

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have recently attracted attention for their promise as active components in a variety of optical and electronic applications, including thermoelectricity generation. Here we demonstrate that removing the wrapping polymer from the highly enriched s-SWCNT network leads to substantial improvements in charge carrier transport and thermoelectric power factor. These improvements arise primarily from an increase in charge carrier mobility within the s-SWCNT networks because of removal of the insulating polymer and control of the level of nanotube bundling in the network, which enables higher thin-film conductivity for a given carrier density. Ultimately, these studies demonstrate that highly enriched s-SWCNT thin films, in the complete absence of any accompanying semiconducting polymer, can attain thermoelectric power factors in the range of approximately 400 uW m-1K-2, which is on par with that of some of the best single-component organic thermoelectrics demonstrated to date.

  14. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    PubMed

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

  15. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    NASA Astrophysics Data System (ADS)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  16. Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

    NASA Astrophysics Data System (ADS)

    Mikulics, M.; Hardtdegen, H.; Adam, R.; Grützmacher, D.; Gregušová, D.; Novák, J.; Kordoš, P.; Sofer, Z.; Serafini, J.; Zhang, J.; Sobolewski, Roman; Marso, M.

    2014-04-01

    We report on the impact of thermal annealing to carrier transport and transient, subpicosecond photoresponse of freestanding GaAs mesostructures. Our measurements included micro-photoluminescence and dark current and responsivity studies as well as optical femtosecond characterization. The fabricated GaAs mesostructures consisted of both mesowires and platelets that were integrated into coplanar striplines to form a photoconductive switch. We demonstrate that an optimized annealing process of our mesostructures, performed at 600 °C for 20 min, led to restoring bulklike properties of our freestanding devices. They exhibited dark currents below 600 pA at 10 V bias, responsivity of 0.2 A W-1 at 30 V, and mobility as high as 7300 cm2 V s-1. The annealed freestanding GaAs photodetectors were characterized by subpicosecond carrier relaxation dynamics with negligible trapping and a cutoff frequency of 1.3 THz. The latter characteristics make them excellent candidates for THz-bandwidth optoelectronics.

  17. Kinetics of photo-activated charge carriers in Sn:CdS

    NASA Astrophysics Data System (ADS)

    Patidar, Manju Mishra; Panda, Richa; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V.

    2016-05-01

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd1-xSnxS (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ1, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  18. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    PubMed

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  19. Stress Activation and Propagation of Electronic Charge Carriers in Igneous Rocks

    NASA Astrophysics Data System (ADS)

    Ling, J.; Freund, F. T.

    2007-12-01

    Igneous and high-grade metamorphic rocks in the Earth's crust generate electric currents when subjected to deviatoric stresses. The reason is that these rocks contain dormant electronic charge carriers in the form of peroxy links. Peroxy links are sites in the crystal structures of the constituent minerals where oxygen anions have converted from their common 2- valence state to the 1- valence state, O3X-OO-XO3 with X=Si4+, Al3+ etc. As rocks are stressed and dislocations sweep through the mineral grains, the peroxy links break up, activating electrons and pholes ("phole" is an abbreviation for "positive hole", a defect electron on the oxygen sublattice, chemically O- in a matrix of O2-). The pholes are mobile electronic charge carriers that can spread out of the stressed rock into the surrounding unstressed rock. They travel via energy levels at the upper edge of the valence bands, cross grain boundaries and achieve a phase velocity on the order of 200±50 m/sec, consistent with phonon-assisted electron hopping. Due to mutual repulsion inside the rock volume the pholes spread to the surface, where they build up a positive surface charge. The surface charge can be measured with a non-contact capacitive sensor. If a Cu contact is applied to the surface of the rock, electrons are injected from ground into the rock in response to the evolving positive charge on the rock surface. We modeled surface potentials and burst-like electron injections following low and medium velocity impact experiments, 100 m/sec and 1.5 km/sec respectively.

  20. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh

  1. Experimental measurements of charge carrier mobility: lifetime products for large sample of pixilated CZT detectors

    NASA Astrophysics Data System (ADS)

    Vadawale, S. V.; Shanmugam, M.; Purohit, Shishir; Acharya, Y. B.; Sudhakar, Manju

    2012-07-01

    Cadmium-Zinc-Telluride (CZT) is thought to be a primary work horse for hard X-ray astronomy in future. Due to the relatively large band-gap, it offers near room temperature operation while maintaining much better energy resolution then scintillator detectors operating in similar energy range. Further, CZT detectors are available in the form of pixilated detectors with area up to few cm2 and hence it is possible to realize very large detector area by having an array of such pixilated CZT detectors. However, it is well known that the energy spectrum of mono-energetic X-ray measured by CZT detectors does not have a Gaussian shape but has significant low-energy tail. This is mainly due to relatively poor mobility and small life time of the charge carriers, particularly of holes, in the CZT crystals. Thus, in order to understand spectral response for a large array of CZT detectors consisting of multiple elements / pixels, it is essential to characterize the mobility-lifetime products of charge carriers for each individual elements / pixels. Here we present experimental measurements of charge carrier mobility-lifetime products for large sample of multi-pixel CZT detectors. The mobility-lifetime products are measured by simultaneously fitting a ‘CZT line’ model to pixel wise spectra of 122 keV X-rays from 57Co at three different bias voltages. These were carried out as a part of selection of CZT detector modules for the “High Energy X-ray spectrometer (HEX)” onboard Indian moon mission - Chandrayaan-1.

  2. Enhanced charge carrier generation in dye sensitized solar cells by nanoparticle plasmons

    NASA Astrophysics Data System (ADS)

    Hägglund, Carl; Zäch, Michael; Kasemo, Bengt

    2008-01-01

    An interesting possibility to improve the conversion and cost efficiencies of photovoltaic solar cells is to exploit the large optical cross sections of localized (nanoparticle) surface plasmon resonances (LSPRs). We have investigated this prospect for dye sensitized solar cells. Photoconductivity measurements were performed on flat TiO2 films, sensitized by a combination of dye molecules and arrays of nanofabricated elliptical gold disks. An enhanced dye charge carrier generation rate was found and shown to derive from the LSPR contribution by means of the polarization dependent resonance frequency in the anisotropic, aligned gold disks.

  3. Influence of Exciton Lifetime on Charge Carrier Dynamics in an Organic Heterostructure

    SciTech Connect

    Agrawal, Kanika L.; Sykes, Matthew E.; An, Kwang Hyup; Frieberg, Bradley; Green, P. F.; Shtein, Max

    2013-03-18

    Interactions between charge carriers and excitons, as well as between excitons and optical cavity modes in organic optoelectronic devices are fundamental to their operational limits and chief in preventing the realization of certain phenomena, such as electrically pumped organic lasing. We uncovered a previously unreported phenomenon, wherein optical cavity-modulated exciton decay rate leads to a concomitant modulation in the electrical current of an archetypal NPD/Alq₃ organic light emitting device operated in forward bias. The magnitude of this variation is sensitive to the local dielectric environment of the device and is found to be as large as 15%.

  4. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  5. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    NASA Astrophysics Data System (ADS)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent

  6. Snapshots of the retarded interaction of charge carriers with ultrafast fluctuations in cuprates

    NASA Astrophysics Data System (ADS)

    Dal Conte, S.; Vidmar, L.; Golež, D.; Mierzejewski, M.; Soavi, G.; Peli, S.; Banfi, F.; Ferrini, G.; Comin, R.; Ludbrook, B. M.; Chauviere, L.; Zhigadlo, N. D.; Eisaki, H.; Greven, M.; Lupi, S.; Damascelli, A.; Brida, D.; Capone, M.; Bonča, J.; Cerullo, G.; Giannetti, C.

    2015-05-01

    One of the pivotal questions in the physics of high-temperature superconductors is whether the low-energy dynamics of the charge carriers is mediated by bosons with a characteristic timescale. This issue has remained elusive as electronic correlations are expected to greatly accelerate the electron-boson scattering processes, confining them to the very femtosecond timescale that is hard to access even with state-of-the-art ultrafast techniques. Here we simultaneously push the time resolution and frequency range of transient reflectivity measurements up to an unprecedented level, enabling us to directly observe the ~16 fs build-up of the effective electron-boson interaction in hole-doped copper oxides. This extremely fast timescale is in agreement with numerical calculations based on the t-J model and the repulsive Hubbard model, in which the relaxation of the photo-excited charges is achieved via inelastic scattering with short-range antiferromagnetic excitations.

  7. Charge carrier mobilities in organic semiconductors: crystal engineering and the importance of molecular contacts.

    PubMed

    Bashir, Asif; Heck, Alexander; Narita, Akimitsu; Feng, Xinliang; Nefedov, Alexei; Rohwerder, Michael; Müllen, Klaus; Elstner, Marcus; Wöll, Christof

    2015-09-14

    We have conducted a combined experimental and theoretical study on the optimization of hexa-peri-hexabenzocoronene (HBC) as organic semiconductor. While orientations with high electronic coupling are unfavorable in the native liquid crystalline phase of HBC, we enforced such orientations by applying external constraints. To this end, self-assembled monolayers (SAMs) were formed by a non-conventional preparation method on an Au-substrate using electrochemical control. Within these SAMs the HBC units are forced into favorable orientations that cannot be achieved by unconstrained crystallization. For simulating the charge transport we applied a recently developed approach, where the molecular structure and the charge carrier are propagated simultaneously during a molecular dynamics simulation. Experiments as well as simulations are mutually supportive of an improved mobility in these novel materials. The implication of these findings for a rational design of future organic semiconductors will be discussed.

  8. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    SciTech Connect

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  9. Charge carrier mobility and concentration as a function of composition in AgPO3-AgI glasses

    NASA Astrophysics Data System (ADS)

    Rodrigues, Ana Candida Martins; Nascimento, Marcio Luis Ferreira; Bragatto, Caio Barca; Souquet, Jean-Louis

    2011-12-01

    Conductivity data of the xAgI(1 - x)AgPO3 system (0 ≤ x ≤ 0.5) were collected in the liquid and glassy states. The difference in the dependence of ionic conductivity on temperature below and above their glass transition temperatures (Tg) is interpreted by a discontinuity in the charge carrier's mobility mechanisms. Charge carrier displacement occurs through an activated mechanism below Tg and through a Vogel-Fulcher-Tammann-Hesse mechanism above this temperature. Fitting conductivity data with the proposed model allows one to determine separately the enthalpies of charge carrier formation and migration. For the five investigated compositions, the enthalpy of charge carrier formation is found to decrease, with x, from 0.86 to 0.2 eV, while the migration enthalpy remains constant at ≈0.14 eV. Based on these values, the charge carrier mobility and concentration in the glassy state can then be calculated. Mobility values at room temperature (≈10-4 cm2 V-1 s-1) do not vary significantly with the AgI content and are in good agreement with those previously measured by the Hall-effect technique. The observed increase in ionic conductivity with x would thus only be due to an increase in the effective charge carrier concentration. Considering AgI as a weak electrolyte, the change in the effective charge carrier concentration is justified and is correlated to the partial free energy of silver iodide forming a regular solution with AgPO3.

  10. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

    PubMed Central

    Liao, Bolin; Maznev, A. A.; Nelson, Keith A.; Chen, Gang

    2016-01-01

    There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon–phonon interactions, it has been a challenge to directly measure electron–phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump–probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron–phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron–phonon interaction on phonon transport in doped semiconductors. PMID:27731406

  11. Real-time charge carrier motion in P3HT studied with Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Castaneda, Chloe; Zaidi, Alyina; Moscatello, Jason; Aidala, Katherine

    We have developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in organic semiconductor devices. We investigate P3HT (full name) in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin probe microscopy to record the potential over time, we can record how the charge carriers respond to changing the backgate voltage while the source and drain electrodes are grounded. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the P3HT film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We compare P3HT transistors with different fabrication procedures that are expected to change the trap distribution: no silanization of the oxide and no annealing, silanization and no annealing, and both silanization and annealing. By incrementally stepping the gate voltage, we probe different trap depths. The recorded change in potential over time is best fit by a double exponential, suggesting two physical mechanisms involved in screening. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  12. Distribution of charge carrier transport properties in organic semiconductors with Gaussian disorder

    NASA Astrophysics Data System (ADS)

    Lorrmann, Jens; Ruf, Manuel; Vocke, David; Dyakonov, Vladimir; Deibel, Carsten

    2014-05-01

    The charge carrier drift mobility in disordered semiconductors is commonly graphically extracted from time-of-flight (TOF) photocurrent transients yielding a single transit time. However, the term transit time is ambiguously defined and fails to deliver a mobility in terms of a statistical average. Here, we introduce an advanced computational procedure to evaluate TOF transients, which allows to extract the whole distribution of transit times and mobilities from the photocurrent transient, instead of a single value. This method, extending the work of Scott et al. (Phys. Rev. B 46, 8603 (1992)), is applicable to disordered systems with a Gaussian density of states and its accuracy is validated using one-dimensional Monte Carlo simulations. We demonstrate the superiority of this new approach by comparing it to the common geometrical analysis of hole TOF transients measured on poly(3-hexyl thiophene-2,5-diyl). The extracted distributions provide access to a very detailed and accurate analysis of the charge carrier transport. For instance, not only the mobility given by the mean transit time but also the mean mobility can be calculated. Whereas the latter determines the macroscopic photocurrent, the former is relevant for an accurate determination of the energetic disorder parameter σ within the Gaussian disorder model. σ derived by using the common geometrical method is, as we show, underestimated instead.

  13. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    NASA Astrophysics Data System (ADS)

    Schuster, Fabian; Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-01

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9 × 1020cm-3 and 1 × 1020cm-3 , respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 1017cm-3 , the nanowires are depleted of charge carriers, whereas they become highly conductive above 1019cm-3 .

  14. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

    NASA Astrophysics Data System (ADS)

    Liao, Bolin; Maznev, A. A.; Nelson, Keith A.; Chen, Gang

    2016-10-01

    There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon-phonon interactions, it has been a challenge to directly measure electron-phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump-probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron-phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron-phonon interaction on phonon transport in doped semiconductors.

  15. Temperature dependence of exciton and charge carrier dynamics in organic thin films

    NASA Astrophysics Data System (ADS)

    Platt, A. D.; Kendrick, M. J.; Loth, M.; Anthony, J. E.; Ostroverkhova, O.

    2011-12-01

    We report on physical mechanisms behind the temperature-dependent optical absorption, photoluminescence (PL), and photoconductivity in spin-coated films of a functionalized anthradithiophene (ADT) derivative, ADT-triethylsilylethynyl (TES)-F, and its composites with C60 and another ADT derivative, ADT-TIPS-CN. Measurements of absorption and PL spectra, PL lifetimes, and transient photocurrent were performed at temperatures between 98 and 300 K as a function of applied electric field. In pristine ADT-TES-F films, absorptive and emissive species were identified to be disordered H aggregates whose properties are affected by static and dynamic disorder. The exciton bandwidths were ≤0.06 and ˜0.115 eV for absorptive and emissive aggregates, respectively, indicative of higher disorder in the emissive species. The exciton in the latter was found to be delocalized over approximately four to five molecules. The PL properties were significantly modified upon adding a guest molecule to the ADT-TES-F host. In ADT-TES-F/C60 composites, the PL was considerably quenched due to photoinduced electron transfer from ADT-TES-F to C60, while in ADT-TES-F/ADT-TIPS-CN blends, the PL was dominated by emission from an exciplex formed between ADT-TES-F and ADT-TIPS-CN molecules. In all materials, the PL quantum yield dramatically decreased as the temperature increased due to thermally activated nonradiative recombination. Considerable electric-field-induced PL quenching was observed at low temperatures at electric fields above ˜105 V/cm due to tunneling into dark states. No significant contribution of ADT-TES-F emissive exciton dissociation to transient photocurrent was observed. In all materials, charge carriers were photogenerated at sub-500-ps time scales, limited by the laser pulse width, with temperature- and electric-field-independent photogeneration efficiency. In ADT-TES-F/C60 (2%) composites, the photogeneration efficiency was a factor of 2-3 higher than that in pristine ADT

  16. Proton intercalated two-dimensional WO3 nano-flakes with enhanced charge-carrier mobility at room temperature

    NASA Astrophysics Data System (ADS)

    Zhuiykov, Serge; Kats, Eugene; Carey, Benjamin; Balendhran, Sivacarendran

    2014-11-01

    Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO3-x is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report for the first time H+ intercalated WO3 FETs, made of Q2D nano-flakes, with enhanced charge-carrier mobility exceeding 319 cm2 V-1 s-1 comparable with the charge-carrier mobility of Q2D dichalcogenides MoS2 and WSe2. Analyses indicate that the enhanced electrical properties of the sub-stoichiometric WO3-x depend on the oxygen vacancies in the intercalated nano-flakes. These findings confirmed that Q2D sub-stoichiometric WO3-x is a promising material for various functional FET devices.Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO3-x is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report

  17. Bulk charge carrier transport in push-pull type organic semiconductor.

    PubMed

    Karak, Supravat; Liu, Feng; Russell, Thomas P; Duzhko, Volodimyr V

    2014-12-10

    Operation of organic electronic and optoelectronic devices relies on charge transport properties of active layer materials. The magnitude of charge carrier mobility, a key efficiency metrics of charge transport properties, is determined by the chemical structure of molecular units and their crystallographic packing motifs, as well as strongly depends on the film fabrication approaches that produce films with different degrees of anisotropy and structural order. Probed by the time-of-flight and grazing incidence X-ray diffraction techniques, bulk charge carrier transport, molecular packing, and film morphology in different structural phases of push-pull type organic semiconductor, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5yl)benzo[c][1,2,5] thiadiazole), one of the most efficient small-molecule photovoltaic materials to-date, are described herein. In the isotropic phase, the material is ambipolar with high mobilities for a fluid state. The electron and hole mobilities at the phase onset at 210.78 °C are 1.0 × 10(-3) cm(2)/(V s) and 6.5 × 10(-4) cm(2)/(V s), respectively. Analysis of the temperature and electric field dependences of the mobilities in the framework of Gaussian disorder formalism suggests larger energetic and positional disorder for electron transport sites. Below 210 °C, crystallization into a polycrystalline film with a triclinic unit cell symmetry and high degree of anisotropy leads to a 10-fold increase of hole mobility. The mobility is limited by the charge transfer along the direction of branched alkyl side chains. Below 90 °C, faster cooling rates produce even higher hole mobilities up to 2 × 10(-2) cm(2)/(V s) at 25 °C because of the more isotropic orientations of crystalline domains. These properties facilitate in understanding efficient material performance in photovoltaic devices and will guide further development of materials and devices.

  18. Quantum states of charge carriers and longitudinal conductivity in double periodic n-type semiconductor lattice structures in electric field

    SciTech Connect

    Perov, A. A. Penyagin, I. V.

    2015-07-15

    Quantum states of charge carriers in double periodic semiconductor superlattices of n-type quantum dots with Rashba spin–orbit coupling in an electron gas have been calculated in the one-electron approximation in the presence of mutually perpendicular electric and magnetic fields. For these structures in weak constant electric field, the solution to the quasi-classical kinetic Boltzmann equation shows that the states of carriers in magnetic Landau minibands with negative differential conductivity are possible.

  19. Anomalous Magnetic Field Dependence of Charge Carrier Density in Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kuivalainen, P.; Sinkkonen, J.; Stubb, T.

    1980-01-01

    This paper reports calculations of temperature and magnetic field dependent thermal and optical activation energies of a shallow donor state and the energy of the conduction band edge in a ferromagnetic semiconductor. The formation of the bound magnetic polaron (BMP), i.e., a magnetically polarized cluster associated with the donor electron, is taken into account. The solution of a set of coupled equations for the energy of a donor electron and for the local non-uniform magnetization around the donor center indicates that the activation energies have their maxima near the Curie temperature and decrease with the application of a magnetic field. This decrease leads to a strong magnetic field dependence of the charge carrier density nc explains well the giant negative magnetoresistance of EuSe observed experimentally at low temperatures.

  20. Charge carrier dynamics in nanocrystalline Dy substituted ceria based oxygen ion conductors

    NASA Astrophysics Data System (ADS)

    Anirban, Sk.; Dutta, A.

    2016-05-01

    Nano-crystalline Ce1-xDyxO2-δ (x = 0.1-0.5) materials were prepared using the low temperature citrate auto-ignition method. The Rietveld analysis of the XRD data confirmed the single phase cubic fluorite structure. The particle sizes of the sintered samples are in nano range and lattice parameter increases with Dy concentration. Polydispersed and agglomerated particles are observed by SEM. The EDAX spectra show good stoichiometry of the different atoms in the samples. The conductivity is found to have both grain and grain boundary contribution and shows highest value at x= 0.2. The frequency dependence of dielectric permittivity has been analyzed using Havrilliak-Negami formalism. The variation in different electrical properties has been explained by formation defect associates and their interaction with charge carriers.

  1. Time-resolved HAXPES using a microfocused XFEL beam: From vacuum space-charge effects to intrinsic charge-carrier recombination dynamics

    PubMed Central

    Oloff, Lars-Philip; Chainani, Ashish; Matsunami, Masaharu; Takahashi, Kazutoshi; Togashi, Tadashi; Osawa, Hitoshi; Hanff, Kerstin; Quer, Arndt; Matsushita, Ryuki; Shiraishi, Ryutaro; Nagashima, Maki; Kimura, Ayato; Matsuishi, Kotaro; Yabashi, Makina; Tanaka, Yoshihito; Rossi, Giorgio; Ishikawa, Tetsuya; Rossnagel, Kai; Oura, Masaki

    2016-01-01

    Time-resolved hard X-ray photoelectron spectroscopy (trHAXPES) using microfocused X-ray free-electron laser (XFEL, hν = 8 keV) pulses as a probe and infrared laser pulses (hν = 1.55 eV) as a pump is employed to determine intrinsic charge-carrier recombination dynamics in La:SrTiO3. By means of a combination of experiments and numerical N-body simulations, we first develop a simple approach to characterize and decrease XFEL-induced vacuum space-charge effects, which otherwise pose a serious limitation to spectroscopy experiments. We then show that, using an analytical mean-field model, vacuum space-charge effects can be counteracted by pump laser-induced photoholes at high excitation densities. This provides us a method to separate vacuum space-charge effects from the intrinsic charge-carrier recombination dynamics in the time domain. Our trHAXPES results thus open a route to studies of intrinsic charge-carrier dynamics on picosecond time scales with lateral spatial resolution on the micrometer scale. PMID:27731408

  2. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    SciTech Connect

    Schuster, Fabian Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-28

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9× 10{sup 20}cm{sup −3} and 1 × 10{sup 20}cm{sup −3}, respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 10{sup 17}cm{sup −3}, the nanowires are depleted of charge carriers, whereas they become highly conductive above 10{sup 19}cm{sup −3}.

  3. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    PubMed

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-09

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

  4. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    PubMed Central

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  5. Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

    PubMed Central

    Maragliano, C.; Lilliu, S.; Dahlem, M. S.; Chiesa, M.; Souier, T.; Stefancich, M.

    2014-01-01

    In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution. A simple electronic energy model is used for correlating the contact potential difference with the doping concentration in the material. Limitations of this technique are discussed in details and some experimental solutions are proposed. Two-dimensional doping concentration images acquired on radio frequency-sputtered intrinsic zinc oxide thin films with different thickness and deposited under different conditions are reported. We show that results inferred with this technique are in accordance with carrier concentration expected for zinc oxide thin films deposited under different conditions and obtained from resistivity and mobility measurements. PMID:24569599

  6. Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

    NASA Astrophysics Data System (ADS)

    Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

    2017-03-01

    A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

  7. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    DOE PAGES

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; ...

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, uponmore » CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.« less

  8. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    SciTech Connect

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; Shoer, Leah E.; Cook, Andrew W.; Eaton, Samuel W.; Marks, Tobin J.; Wasielewski, Michael R.

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, upon CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.

  9. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS, PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT, (PBP&E) AND... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum...

  10. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    NASA Astrophysics Data System (ADS)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  11. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    PubMed Central

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

    2016-01-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  12. Wave propagation and optical properties in slabs with light-induced free charge carriers.

    PubMed

    Lencina, Alberto; Vaveliuk, Pablo; Ruiz, Beatriz; Tebaldi, Myrian; Bolognini, Néstor

    2006-11-01

    A theoretical analysis on wave propagation and optical properties of slabs with light-induced free charge carriers within a Fabry-Pérot framework is presented. The key of the analysis is to attack the wave propagation problem in terms of the time-averaged Poynting vector modulus within the medium through an alternative approach. This fact allows coupling the microscopic (free charge rate) and macroscopic (electromagnetic field evolution) equations self-consistently by means of the nonlinear permittivity and conductivity, which, in turn, depend on the time-averaged Poynting vector modulus. Thereby, the transmittance, reflectance, and absorptive power are derived as functions of the pump intensity and medium thickness. Bistable behavior is found at relatively high excitation intensity for positive values of the nonlinear permittivity coefficient. The bistability enhances for increasing values of such coefficient and weakens for increasing values of nonlinear photoconductivity coefficient. On the contrary, for negative nonlinear permittivity coefficient, bistability does not appear possessing these media mirrorlike behavior. Some possible applications are suggested.

  13. Initiating and imaging the coherent surface dynamics of charge carriers in real space

    PubMed Central

    Rusimova, K. R.; Bannister, N.; Harrison, P.; Lock, D.; Crampin, S.; Palmer, R. E.; Sloan, P. A.

    2016-01-01

    The tip of a scanning tunnelling microscope is an atomic-scale source of electrons and holes. As the injected charge spreads out, it can induce adsorbed molecules to react. By comparing large-scale ‘before' and ‘after' images of an adsorbate covered surface, the spatial extent of the nonlocal manipulation is revealed. Here, we measure the nonlocal manipulation of toluene molecules on the Si(111)-7 × 7 surface at room temperature. Both the range and probability of nonlocal manipulation have a voltage dependence. A region within 5–15 nm of the injection site shows a marked reduction in manipulation. We propose that this region marks the extent of the initial coherent (that is, ballistic) time-dependent evolution of the injected charge carrier. Using scanning tunnelling spectroscopy, we develop a model of this time-dependent expansion of the initially localized hole wavepacket within a particular surface state and deduce a quantum coherence (ballistic) lifetime of ∼10 fs. PMID:27677938

  14. Directional Charge-Carrier Transport in Oriented Benzodithiophene Covalent Organic Framework Thin Films.

    PubMed

    Medina, Dana D; Petrus, Michiel L; Jumabekov, Askhat N; Margraf, Johannes T; Weinberger, Simon; Rotter, Julian M; Clark, Timothy; Bein, Thomas

    2017-02-22

    Charge-carrier transport in oriented COF thin films is an important factor for realizing COF-based optoelectronic devices. We describe how highly oriented electron-donating benzodithiophene BDT-COF thin films serve as a model system for a directed charge-transport study. Oriented BDT-COF films were deposited on different electrodes with excellent control over film roughness and topology, allowing for high-quality electrode-COF interfaces suitable for device fabrication. Hole-only devices were constructed to study the columnar hole mobility of the BDT-COF films. The transport measurements reveal a clear dependency of the measured hole mobilities on the BDT-COF film thickness, where thinner films showed about two orders of magnitude higher mobilities than thicker ones. Transport measurements under illumination yielded an order of magnitude higher mobility than in the dark. In-plane electrical conductivity values of up to 5 × 10(-7) S cm(-1) were obtained for the oriented films. Impedance measurements of the hole-only devices provided further electrical description of the oriented BDT-COF films in terms of capacitance, recombination resistance, and dielectric constant. An exceptionally low dielectric constant value of approximately 1.7 was estimated for the BDT-COF films, a further indication of their highly porous nature. DFT and molecular-dynamics simulations were carried out to gain further insights into the relationships between the COF layer interactions, electronic structure, and the potential device performance.

  15. Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

    PubMed Central

    Friederich, Pascal; Schäfer, Bernhard; Fattori, Valeria; Sun, Xiangnan; Strunk, Timo; Meded, Velimir; Hueso, Luis E; Wenzel, Wolfgang; Ruben, Mario

    2015-01-01

    Summary We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement. PMID:26171287

  16. Ultrafast relaxation and transfer of charge carriers in type-II heterodoping (n-i-p-i) superlattices

    NASA Astrophysics Data System (ADS)

    Moritz, N.; Hauenstein, H. M.; Seilmeier, A.

    1995-12-01

    In all-optical experiments, transient nonlinear absorption changes due to band filling and the Franz-Keldysh effect are used to study the ultrafast dynamics of charge carriers in AlxGa1-xAs type-II-hetero-n-i-p-i structures containing a single 20-nm-wide GaAs quantum well in each Ultrafast relaxation and transfer of charge carriers in type-II heterodoping superlattices intrinsic region. Pump pulses of 0.6 ps duration inject electron-hole pairs exclusively in the quantum wells located in the region with high electric field. We observe carrier cooling and thermionic transfer of the thermalized carriers perpendicular to the layers. The measured transfer times between ~50 and ~500 ps are found to increase with excitation power. The transfer process is followed by lateral carrier diffusion and, finally, by interband recombination which proceeds on a time scale from 100 μs to several seconds depending on the density of photoexcited carriers. The experimental results are compared with model calculations on Thomas-Fermi approximation.

  17. Facet-selective charge carrier transport, deactivation mechanism and stabilization of a Cu2O photo-electro-catalyst.

    PubMed

    Li, Yang; Yun, Xiaogang; Chen, Hong; Zhang, Wenqin; Li, Yongdan

    2016-03-14

    A facet-dependent photo-deactivation mechanism of Cu2O was verified and reported, which is caused by the facet-dependent charge carrier transport. During irradiation, the {100} and {110} crystal facets are selectively corroded by the photo-generated holes, while the {111} facets are comparatively stable.

  18. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  19. Charge Density and Molecular Weight of Polyphosphoramidate Gene Carrier Are Key Parameters Influencing Its DNA Compaction Ability and Transfection Efficiency

    PubMed Central

    Ren, Yong; Jiang, Xuan; Pan, Deng; Mao, Hai-Quan

    2011-01-01

    A series of polyphosphoramidates (PPA) with different molecular weights (MWs) and charge densities were synthesized and examined for their DNA compaction ability and transfection efficiency. A strong correlation was observed between the transfection efficiency of PPA/DNA nanoparticles and the MW and net positive charge density of the PPA gene carriers in three different cell lines (HeLa, HEK293 and HepG2 cells). An increase in MW and/or net positive charge density of PPA carrier yielded higher DNA compaction capacity, smaller nanoparticles with higher surface charges and higher complex stability against challenges by salt and polyanions. These favorable physicochemical properties of nanoparticles led to enhanced transfection efficiency. PPA/DNA nanoparticles with the highest complex stability showed comparable transfection efficiency as PEI/DNA nanoparticles likely by compensating the low buffering capacity with higher cellular uptake and affording higher level of protection to DNA in endolysosomal compartment. The differences in transfection efficiency were not attributed by any difference in cytotoxicity among the carriers, as all nanoparticles showed minimal level of cytotoxicity under the transfection conditions. Using PPA as a model system, we demonstrated the structural dependence of transfection efficiency of polymer gene carrier. These results offer more insights into nanoparticle engineering for non-viral gene delivery. PMID:21067136

  20. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  1. Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids.

    PubMed

    Heo, Seung Jin; Yoon, Seokhyun; Oh, Sang Hoon; Yoon, Doo Hyun; Kim, Hyun Jae

    2014-01-21

    We investigated the effects of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot (CQD) solids. We applied high pressure to PbS CQD solids using nitrogen gas to reduce the inter-dot distance. Using this simple process, we obtained conductive PbS CQD solids. Terahertz time-domain spectroscopy was used to study charge carrier transport as a function of pressure. We found that the minimum pressure needed to increase the dielectric constant, conductivity, and carrier mobility was 4 MPa. All properties dramatically improved at 5 MPa; for example, the mobility increased from 0.13 cm(2) V(-1) s(-1) at 0.1 MPa to 0.91 cm(2) V(-1) s(-1) at 5 MPa. We propose this simple process as a nondestructive approach for making conductive PbS CQD solids that are free of chemical and physical defects.

  2. Numerical Analysis of Threshold between Laser-Supported Detonation and Combustion Wave Using Thermal Non-Equilibrium and Multi-Charged Ionization Model

    NASA Astrophysics Data System (ADS)

    Shiraishi, Hiroyuki; Kumagai, Yuya

    Laser-supported Detonation (LSD), which is one type of Laser-supported Plasma (LSP), is an important phenomenon because it can generate high pressures and temperatures for laser absorption. In this study, using thermal-non-equilibrium model, we numerically simulate LSPs, which are categorized as either LSDs or laser-supported combustion-waves (LSCs). For the analysis model, a two-temperature (heavy particle and electron-temperature) model has been used because the electronic mode excites first in laser absorption and a thermal non-equilibrium state easily arises. In the numerical analysis of the LSDs, laser absorption models are particularly important. Therefore, a multi-charged ionization model is considered to evaluate precisely the propagation and the structure transition of the LSD waves in the proximity of the LSC-LSD threshold. In the new model, the transition of the LSD construction near the threshold, which is indicated by the ionization delay length, becomes more practical.

  3. Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

    NASA Astrophysics Data System (ADS)

    Edley, Michael

    Photovoltaic energy is a clean and renewable source of electricity; however, it faces resistance to widespread use due to cost. Nanostructuring decouples constraints related to light absorption and charge separation, potentially reducing cost by allowing a wider variety of processing techniques and materials to be used. However, the large interfacial areas also cause an increased dark current which negatively affects cell efficiency. This work focuses on extremely thin absorber (ETA) solar cells that used a ZnO nanowire array as a scaffold for an extremely thin CdSe absorber layer. Photoexcited electrons generated in the CdSe absorber are transferred to the ZnO layer, while photogenerated holes are transferred to the liquid electrolyte. The transfer of photoexcited carriers to their transport layer competes with bulk recombination in the absorber layer. After charge separation, transport of charge carriers to their respective contacts must occur faster than interfacial recombination for efficient collection. Charge separation and collection depend sensitively on the dimensions of the materials as well as their interfaces. We demonstrated that an optimal absorber thickness can balance light absorption and charge separation. By treating the ZnO/CdSe interface with a CdS buffer layer, we were able to improve the Voc and fill factor, increasing the ETA cell's efficiency from 0.53% to 1.34%, which is higher than that achievable using planar films of the same material. We have gained additional insight into designing ETA cells through the use of dynamic measurements. Ultrafast transient absorption spectroscopy revealed that characteristic times for electron injection from CdSe to ZnO are less than 1 ps. Electron injection is rapid compared to the 2 ns bulk lifetime in CdSe. Optoelectronic measurements such as transient photocurrent/photovoltage and electrochemical impedance spectroscopy were applied to study the processes of charge transport and interfacial recombination

  4. Compositional dependence of charge carrier transport in kesterite Cu2ZnSnS4 solar cells

    NASA Astrophysics Data System (ADS)

    Just, Justus; Nichterwitz, Melanie; Lützenkirchen-Hecht, Dirk; Frahm, Ronald; Unold, Thomas

    2016-12-01

    Cu2ZnSnS4 solar cells deposited by thermal co-evaporation have been characterized structurally and electronically to determine the dependence of the electronic properties on the elemental composition of the kesterite phase, which can significantly deviate from the total sample composition. To this end, the kesterite phase content and composition were determined by a combination of X-ray fluorescence and X-ray absorption measurements. The electronic properties, such as carrier density and minority carrier diffusion length, were determined by electron beam induced current measurements and capacitance-voltage profiling. The charge-carrier transport properties are found to strongly depend on the Cu/(Sn+Zn) ratio of the kesterite phase. For the Cu-poor sample, a minority carrier diffusion length of 270 nm and a total collection length of approx. 500 nm are deduced, indicating that current collection should not be an issue in thin devices.

  5. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Myers, Thomas H.; Barnes, Teresa M.; Jensen, Søren A.; Allende Motz, Alyssa M.

    2017-02-01

    From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 μm. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 ± 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Therefore, the extended defects are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.

  6. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    SciTech Connect

    Aleksandrov, P. A. Belova, N. E.; Demakov, K. D.; Shemardov, S. G.

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  7. The Moving Lines on Electron Spectra as Charge Reflexes on Non-equilibrium States of Nanostructured Surfaces

    NASA Astrophysics Data System (ADS)

    Mishchuk, Oleg A.

    2016-04-01

    The experimental results present the phenomenon of moving lines on electron spectra which are linked spatially and in time with the localization and durability of the processes of new surface producing in folds and grain boundaries. This effect was also realized for a thin-layer composite "organic on metal films on dielectric substrate" in modeling non-equilibrium conditions which are created by the intensive electron beam pulse impact. It was found that the nature of the inceptive adsorption layer, in addition to the metal film, determines the initial positions of moving lines on the spectra. The main accents in these investigations were in observations of appearance of the moving lines, dynamics of their displacements on the spectra, final stages when these lines vanished, and finding the general regularities between the spontaneous and induced events.

  8. The Moving Lines on Electron Spectra as Charge Reflexes on Non-equilibrium States of Nanostructured Surfaces.

    PubMed

    Mishchuk, Oleg A

    2016-12-01

    The experimental results present the phenomenon of moving lines on electron spectra which are linked spatially and in time with the localization and durability of the processes of new surface producing in folds and grain boundaries. This effect was also realized for a thin-layer composite "organic on metal films on dielectric substrate" in modeling non-equilibrium conditions which are created by the intensive electron beam pulse impact. It was found that the nature of the inceptive adsorption layer, in addition to the metal film, determines the initial positions of moving lines on the spectra. The main accents in these investigations were in observations of appearance of the moving lines, dynamics of their displacements on the spectra, final stages when these lines vanished, and finding the general regularities between the spontaneous and induced events.

  9. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    DOE PAGES

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; ...

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics aremore » extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  10. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    SciTech Connect

    Barone, C. Mauro, C.; Pagano, S.; Landi, G.; Neitzert, H. C.

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  11. Charge-carrier transport and recombination in heteroepitaxial CdTe

    SciTech Connect

    Kuciauskas, Darius Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-09-28

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  12. Spatial Localization of Excitons and Charge Carriers in Hybrid Perovskite Thin Films

    DOE PAGES

    Simpson, Mary Jane; Doughty, Benjamin L; Yang, Bin; ...

    2015-01-01

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. However, the spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kineticsmore » are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. Analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  13. Corneal permeation properties of a charged lipid nanoparticle carrier containing dexamethasone

    PubMed Central

    Ban, Junfeng; Zhang, Yan; Huang, Xin; Deng, Guanghan; Hou, Dongzhi; Chen, Yanzhong; Lu, Zhufen

    2017-01-01

    Drug delivery carriers can maintain effective therapeutic concentrations in the eye. To this end, we developed lipid nanoparticles (L/NPs) in which the surface was modified with positively charged chitosan, which engaged in hydrogen bonding with the phospholipid membrane. We evaluated in vitro corneal permeability and release characteristics, ocular irritation, and drug dynamics of modified and unmodified L/NPs in aqueous humor. The size of L/NPs was uniform and showed a narrow distribution. Corneal permeation was altered by the presence of chitosan and was dependent on particle size; the apparent permeability coefficient of dexamethasone increased by 2.7 and 1.8 times for chitosan-modified and unmodified L/NPs, respectively. In conclusion, a chitosan-modified system could be a promising method for increasing the ocular bioavailability of unmodified L/NPs by enhancing their retention time and permeation into the cornea. These findings provide a theoretical basis for the development of effective drug delivery systems in the treatment of ocular disease. PMID:28243093

  14. Computational Confirmation of the Carrier for the "XCN" Interstellar Ice Bank: OCN(-) Charge Transfer Complexes

    NASA Technical Reports Server (NTRS)

    Park, J.-Y.; Woon, D. E.

    2004-01-01

    Recent experimental studies provide evidence that carrier for the so-called XCN feature at 2165 cm(exp -1) (4.62 micron) in young stellar objects is an OCN(-)/NH4(+) charge transfer (CT) complex that forms in energetically processed interstellar icy grain mantles. Although other RCN nitriles and RCN iosonitriles have been considered, Greenberg's conjecture that OCN(-) is associated with the XCN feature has persisted for over 15 years. In this work we report a computational investigation that thoroughly confirms the hypothesis that the XCN feature observed in laboratory studies can result from OCN(-)/NH4(+) CT complexes arising from HNCO and NH3, in a water ice environment. Density functional theory calculations with theory calculations with HNCO, NH3, and up to 12 waters reproduce seven spectroscopic measurements associated with XCN: the band origin of the asymmetric stretching mode of OCN(-), shifts due to isotopic substitutions of C, N, O, and H, and two weak features. However, very similar values are also found for the OCN(-)/NH4(+) CT complex arising from HOCN and NH3. In both cases, the complex forms by barrierless proton transfer from HNCO or HOCN to NH3 during the optimization of the solvated system. Scaled B3LYP/6-31+G** harmonic frequencies for HNCO and HOCN cases are 2181 and 2202 cm(exp -1), respectively.

  15. Thickness dependent charge transfer states and dark carriers density in vacuum deposited small molecule organic photocell

    NASA Astrophysics Data System (ADS)

    Shekhar, Himanshu; Tzabari, Lior; Solomeshch, Olga; Tessler, Nir

    2016-10-01

    We have investigated the influence of the active layer thickness on the balance of the internal mechanisms affecting the efficiency of copper phthalocyanine - fullerene (C60) based vacuum deposited bulk heterojunction organic photocell. We fabricated a range of devices for which we varied the thickness of the active layer from 40 to 120 nm and assessed their performance using optical and electrical characterization techniques. As reported previously for phthalocyanine:C60, the performance of the device is highly dependent on the active layer thickness and of all the thicknesses we tried, the 40 nm thin active layer device showed the best solar cell characteristic parameters. Using the transfer matrix based optical model, which includes interference effects, we calculated the optical power absorbed in the active layers for the entire absorption band, and we found that this cannot explain the trend with thickness. Measurement of the cell quantum efficiency as a function of light intensity showed that the relative weight of the device internal processes changes when going from 40 nm to 120 nm thick active layer. Electrical modeling of the device, which takes different internal processes into account, allowed to quantify the changes in the processes affecting the generation - recombination balance. Sub gap external quantum efficiency and morphological analysis of the surface of the films agree with the model's result. We found that as the thickness grows the density of charge transfer states and of dark carriers goes up and the uniformity in the vertical direction is reduced.

  16. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    SciTech Connect

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.

  17. Solution of a new nonlinear equation for the distribution of charge carriers in a semiconductor

    NASA Astrophysics Data System (ADS)

    Liboff, Richard L.; Schenter, Gregory K.

    1986-11-01

    The solution of a recently obtained nonlinear differential equation for the distribution function of charge carriers in a semiconductor in an electric field is derived. It is given by fSL(x)=\\{1+B[s/(x+s)]sex \\}-1. This solution represents the symmetric part of the total distribution function. The nondimensional energy and applied electric field are x and √s , respectively, and B is a constant determined by normalization. The total distribution is given by the above and its derivative and is found to be rotationally symmetric about the electric field. This distribution reduces to the shifted Fermi-Dirac distribution for small s and to the Druyvesteyn distribution in the classical limit. An analytic expression for electrical conductivity is derived together with an approximate expression for the chemical potential in the small-electric-field limit. A generalized criterion for the classical versus quantum domains is discussed relevant to the present study. It is found that otherwise quantum domains become classical for sufficiently large applied electric fields.

  18. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    NASA Astrophysics Data System (ADS)

    Harrison, S.; Young, M. P.; Hodgson, P. D.; Young, R. J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U. W.; Bimberg, D.

    2016-02-01

    Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k .p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

  19. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    NASA Astrophysics Data System (ADS)

    Barone, C.; Landi, G.; Mauro, C.; Neitzert, H. C.; Pagano, S.

    2015-10-01

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  20. Complete ultrafast charge carrier dynamics in photo-excited all-inorganic perovskite nanocrystals (CsPbX3).

    PubMed

    Mondal, Navendu; Samanta, Anunay

    2017-02-02

    Understanding the nature and dynamics of the photo-induced transients of all-inorganic perovskite nanocrystals (NCs) is key to their exploitation in potential applications. In order to determine the nature of charge carriers, their deactivation pathways and dynamics, the photo-induced transients of CsPbBr3, CsPbBr2I, CsPbBr1.5I1.5 and CsPbI3 NCs are spectrally and temporally characterized employing a combination of femtosecond transient absorption (TA) and photoluminescence (PL) up-conversion techniques and global analysis of the data. The results provide distinct identities of the excitons and free charge carriers and distinguish the hot charge carriers from the cold ones. The carrier trapping is attributed to the electrons and their dynamics is unaffected in mixed halide perovskites. The excitation energy dependence of the TA dynamics suggests that the trap states are shallow in nature and mainly limited near the band-edge level. In mixed halide perovskites, an increase in the iodine content leads to hole trapping in a short time scale (<5 ps). The insights obtained from this study are likely to be helpful for tuning the photo-response of these substances and their better utilization in light-based applications.

  1. Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures

    SciTech Connect

    Winnerl, Andrea Pereira, Rui N.; Stutzmann, Martin

    2015-10-21

    In this work, we use GaN with different deposited Pt nanostructures as a controllable model system to investigate the kinetics of photo-generated charge carriers in hybrid photocatalysts. We combine conductance and contact potential difference measurements to investigate the influence of Pt on the processes involved in the capture and decay of photo-generated charge carriers at and close to the GaN surface. We found that in the presence of Pt nanostructures the photo-excitation processes are similar to those found in Pt free GaN. However, in GaN with Pt nanostructures, photo-generated holes are preferentially trapped in surface states of the GaN covered with Pt and/or in electronic states of the Pt and lead to an accumulation of positive charge there, whereas negative charge is accumulated in localized states in a shallow defect band of the GaN covered with Pt. This preferential accumulation of photo-generated electrons close to the surface is responsible for a dramatic acceleration of the turn-off charge transfer kinetics and a stronger dependence of the surface photovoltage on light intensity when compared to a Pt free GaN surface. Our study shows that in hybrid photocatalysts, the metal nanostructures induce a spatially inhomogeneous surface band bending of the semiconductor that promotes a lateral drift of photogenerated charges towards the catalytic nanostructures.

  2. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  3. Photogeneration and transport of charge carriers in hybrid materials of conjugated polymers and dye-sensitized TiO2

    NASA Astrophysics Data System (ADS)

    Däubler, T. K.; Glowacki, I.; Scherf, U.; Ulanski, J.; Hörhold, H.-H.; Neher, D.

    1999-12-01

    Steady state photoconductivity and current-voltage (I-V) experiments are performed on solid films of organic/inorganic composites of dye-sensitized TiO2 in combination with poly(N-vinylcarbazole) (PVK), a ladder-type PPP and a soluble PPV derivative. The I-V characteristics of the composites in the dark are explained by the formation of percolation networks of nanoparticles between the electrodes. Photoaction spectra of the devices prove that the photogeneration of charge carriers is significantly enhanced and spectrally broadened only if electron transfer from the polymer to the dye is possible. Increasing the concentration of the nanoparticles in the hybrid materials changes the spectral shape of the photoresponse. For high TiO2 contents signatures due to the absorption of the Ruthenium dye can be observed. The different electronic properties of anatase/brookite TiO2 and rutile TiO2 have only minor effects on the generation of charge carriers and on the shape of the photoaction spectra. Indeed, photocurrents are more related to the Brunauer—Emmett-Teller surface area of the nanoparticles and thus, to the amount of dye adsorbed. Charge collection efficiencies exceeding 100%, observed for both bias directions, can be explained by photoconductivity gain. It is proposed that recombination is reduced by transport of the oppositely charged carriers in two different phases.

  4. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive.

    PubMed

    Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

    2016-05-01

    Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene-conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions.

  5. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

    PubMed Central

    Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

    2016-01-01

    Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene–conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions. PMID:27386541

  6. Charge Carrier Processes in Photovoltaic Materials and Devices: Lead Sulfide Quantum Dots and Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Roland, Paul

    Charge separation, transport, and recombination represent fundamental processes for electrons and holes in semiconductor photovoltaic devices. Here, two distinct materials systems, based on lead sulfide quantum dots and on polycrystalline cadmium telluride, are investigated to advance the understanding of their fundamental nature for insights into the material science necessary to improve the technologies. Lead sulfide quantum dots QDs have been of growing interest in photovoltaics, having recently produced devices exceeding 10% conversion efficiency. Carrier transport via hopping through the quantum dot thin films is not only a function of inter-QD distance, but of the QD size and dielectric media of the surrounding materials. By conducting temperature dependent transmission, photoluminescence, and time resolved photoluminescence measurements, we gain insight into photoluminescence quenching and size-dependent carrier transport through QD ensembles. Turning to commercially relevant cadmium telluride (CdTe), we explore the high concentrations of self-compensating defects (donors and acceptors) in polycrystalline thin films via photoluminescence from recombination at defect sites. Low temperature (25 K) photoluminescence measurements of CdTe reveal numerous radiative transitions due to exciton, trap assisted, and donor-acceptor pair recombination events linked with various defect states. Here we explore the difference between films deposited via close space sublimation (CSS) and radio frequency magnetron sputtering, both as-grown and following a cadmium chloride treatment. The as-grown CSS films exhibited a strong donor-acceptor pair transition associated with deep defect states. Constructing photoluminescence spectra as a function of time from time-resolved photoluminescence data, we report on the temporal evolution of this donor-acceptor transition. Having gained insight into the cadmium telluride film quality from low temperature photoluminescence measurements

  7. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    NASA Astrophysics Data System (ADS)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  8. Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals

    NASA Astrophysics Data System (ADS)

    Schubert, M.; Korlacki, R.; Knight, S.; Hofmann, T.; Schöche, S.; Darakchieva, V.; Janzén, E.; Monemar, B.; Gogova, D.; Thieu, Q.-T.; Togashi, R.; Murakami, H.; Kumagai, Y.; Goto, K.; Kuramata, A.; Yamakoshi, S.; Higashiwaki, M.

    2016-03-01

    We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β -Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2 ¯01 ), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β -Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infrared and far-infrared active transverse optic phonon modes with Au and Bu symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in β -Ga2O3 . We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin-doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in β -Ga2O3 and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and far-infrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for β -Ga2O3 .

  9. Mechanistic insights into the photoinduced charge carrier dynamics of BiOBr/CdS nanosheet heterojunctions for photovoltaic application.

    PubMed

    Jia, Huimin; Zhang, Beibei; He, Weiwei; Xiang, Yong; Zheng, Zhi

    2017-03-02

    The rational design of high performance hetero-structure photovoltaic devices requires a full understanding of the photoinduced charge transfer mechanism and kinetics at the interface of heterojunctions. In this paper, we intelligently fabricated p-BiOBr/n-CdS heterojunctions with perfect nanosheet arrays by using a facile successive ionic layer adsorption and reaction and chemical bath deposition methods at low temperature. A BiOBr/CdS heterojunction based solar cell has been fabricated which exhibited enhanced photovoltaic responses. Assisted by the surface photovoltage (SPV), transient photovoltage (TPV) and Kelvin probe technique, the photoinduced charge transfer dynamics on the BiOBr nanosheet and p-BiOBr/n-CdS interface were systematically investigated. It was found that the BiOBr/CdS nanosheet array heterojunctions were more efficient in facilitating charge carrier separation than both bare BiOBr and CdS films. The mechanism underlying the photoinduced charge carrier transfer behaviour was unravelled by allying the energy band of BiOBr/CdS p-n junctions from both the interfacial electric field and surface electric field. In addition, the CdS loading thickness in the p-BiOBr/n-CdS heterojunction and the incident wavelength affected greatly the transfer behavior of photoinduced charges, which was of great value for design of photovoltaic devices.

  10. Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

    NASA Astrophysics Data System (ADS)

    Schmidt, V.; Senz, S.; Gösele, U.

    2007-02-01

    The electrical properties of Si nanowires covered by a SiO2 shell are influenced by the properties of the Si/SiO2 interface. This interface can be characterized by the fixed oxide charge density Qf and the interface trap level density Dit. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Qf, Dit, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius acrit. An analytic expression for acrit is derived.

  11. Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Gebauer, J.; Weber, E. R.; Jäger, N. D.; Urban, K.; Ebert, Ph.

    2003-03-01

    We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancy-donor complexes (VGa-TeAs). We show quantitatively that the compensation in Te-doped bulk GaAs is exclusively caused by vacancy-donor complexes in contrast to Si-doped GaAs. This is explained with the Fermi-level effect as the universal mechanism leading to Ga vacancy formation in n-doped GaAs, and a Coulomb interaction leading to the formation of the complexes. The quantification of the carrier compensation yields a -3e charge state of VGa in bulk GaAs.

  12. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

    SciTech Connect

    Abdinov, A. Sh.; Babayeva, R. F.; Amirova, S. I.; Rzayev, R. M.

    2013-08-15

    In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

  13. Numerical Analysis on Non-Equilibrium Mechanism of Laser-Supported Detonation Wave Using Multiply-Charged Ionization

    SciTech Connect

    Shiraishi, Hiroyuki

    2006-05-02

    Laser-Supported Detonation (LSD), one type of Laser-Supported Plasma (LSP), is considered as the most important phenomena because it can generate high pressure and high temperature for laser absorption. In this study, I have numerically simulated the 1-D LSD waves propagating through a helium gas, in which Multiply-charged ionization model is considered for describing an accurate ionization process.

  14. Numerical Analysis on Non-Equilibrium Mechanism of Laser-Supported Detonation Wave Using Multiply-Charged Ionization

    NASA Astrophysics Data System (ADS)

    Shiraishi, Hiroyuki

    2006-05-01

    Laser-Supported Detonation (LSD), one type of Laser-Supported Plasma (LSP), is considered as the most important phenomena because it can generate high pressure and high temperature for laser absorption. In this study, I have numerically simulated the 1-D LSD waves propagating through a helium gas, in which Multiply-charged ionization model is considered for describing an accurate ionization process.

  15. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    SciTech Connect

    Nian, Qiong; Cheng, Gary J.; Zhang, Martin Y.; Wang, Yuefeng; Das, Suprem R.; Bhat, Venkataprasad S.; Huang, Fuqiang

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  16. Interference of spin-, charge- and orbital degrees of freedom in low-carrier rare earth compounds, investigated by NMR

    NASA Astrophysics Data System (ADS)

    Wada, S.

    2006-05-01

    In rare earth compounds, the concentration of charge carriers is known to strongly influence the nature, and the charge carriers caused by valence fluctuations result in a complete suppression of the magnetic state, as typically observed for YbInCu4. The notable exception has been reported for the cubic (NaCl structure) TmX and YbX families with low carrier, that exhibits antiferro-magnetic (AFM) order at low temperatures. Among these families, TmTe and YbSb with degenerate low-lying multiplets have an additional transition of antiferro-quadrupolar (AFQ) orderings. To elucidate the interplay between the electronic transport and magnetic and/or orbital phenomena close to a semiconductor-to-metal transition, we have carried NMR measurements of 63Cu in YbInCu4, 125Te in TmTe, and 121Sb in YbSb down to 1.2 K and the implication of NMR findings is discussed in terms of the CEF splitting.

  17. Point-contact Andreev-reflection spectroscopy of doped manganites: Charge carrier spin-polarization and proximity effects (Review Article)

    NASA Astrophysics Data System (ADS)

    Krivoruchko, V. N.; D'yachenko, A. I.; Tarenkov, V. Yu.

    2013-03-01

    Materials with spin-polarized charge carriers are the most demanded in the spin-electronics. Particularly requested are the so-called half-metals which have the maximum attainable value of carrier spin polarization. Doped manganites are in the list of compounds with, potentially, half-metallic properties. The point-contact (PC) Andreev-reflection (AR) spectroscopy is a robust and direct method to measure the degree of current spin polarization. In this report, advances in PCAR spectroscopy of ferromagnetic manganites are reviewed. The experimental results obtained on "classic" s-wave superconductor—ferromagnetic manganites PCs, as well as related theoretical models applied to deduce the actual value of charge carrier spin-polarization, are discussed. Data obtained on "proximity affected" contacts is also outlined. Systematic and repeatable nature of a number of principal experimental facts detected in the AR spectrum of proximity affected contacts suggests that some new physical phenomena have been documented here. Different models of current flow through a superconductor-half-metal ferromagnet interface, as well as possibility of unconventional superconducting proximity effect, have been discussed.

  18. Nonequilibrium processes.

    PubMed

    Polanyi, J C

    1971-08-01

    Nonequilibrium phenomena have been studied for over half a century, particularly as a means to understanding the mechanism of energy transfer. Application of the insights and techniques of molecular physics to chemistry has resulted in a view of chemistry as constituting an aspect of the study of strong collisions, and chemical reaction as a special type of energy transfer. Increasing use has been made in experimental work of nonequilibrium environments for the study of chemical processes. The nature and purpose of such experiments are reviewed here, very briefly, and an attempt is made to point to areas that appear ripe for development over the coming decade.

  19. Electron spin resonance study of Er-concentration effect in GaAs;Er,O containing charge carriers

    SciTech Connect

    Elmasry, F.; Okubo, S.; Ohta, H.; Fujiwara, Y.

    2014-05-21

    Er-concentration effect in GaAs;Er,O containing charge carriers (n-type, high resistance, p-type) has been studied by X-band Electron spin resonance (ESR) at low temperature (4.7 K < T < 18 K). Observed A, B, and C types of ESR signals were identical to those observed previously in GaAs:Er,O without carrier. The local structure around Er-2O centers is not affected by carriers because similar angular dependence of g-values was observed in both cases (with/without carrier). For temperature dependence, linewidth and lineshape analysis suggested the existence of Er dimers with antiferromagnetic exchange interaction of about 7 K. Moreover, drastic decrease of ESR intensity for C signal in p-type sample was observed and it correlates with the decrease of photoluminescence (PL) intensity. Possible model for the Er-2O trap level in GaAs:Er,O is discussed from the ESR and PL experimental results.

  20. Investigation of free charge carrier dynamics in single-crystalline CVD diamond by two-photon absorption

    SciTech Connect

    Ivakin, E V; Kisialiou, I G; Ralchenko, V G; Bolshakov, A P; Ashkinazi, E E; Sharonov, G V

    2014-11-30

    By using the methods of transient gratings (TGs) and induced absorption, we have studied the kinetics of plasma of free charge carriers (FCCs) created by the action of a picosecond laser pulse in two high-purity diamond single crystals synthesised from the gas phase. The gratings with different spatial periods have been excited at the wavelengths of 266 or 213 nm (above and below the fundamental absorption edge in diamond) and probed with continuous-wave radiation in the visible region. At the moderate FCC concentrations (∼7 × 10{sup 17} cm{sup -3}), the coefficient of ambipolar diffusion and the carrier recombination time of two crystals are 20.3 and 18.9 cm{sup 2} s{sup -1} and 30 and 190 ns, respectively. The increase in the carrier concentration up to 5 × 10{sup 19} cm{sup -3} reduces the TG lifetime. We have determined the conditions under which the relaxation of the grating of carriers leads to the formation of a thermal grating, with the amplitude sufficient for its experimental observation. (interaction of laser radiation with matter. laser plasma)

  1. Electrically induced phase transition in α -(BEDT-TTF)2I3 : Indications for Dirac-like hot charge carriers

    NASA Astrophysics Data System (ADS)

    Peterseim, T.; Ivek, T.; Schweitzer, D.; Dressel, M.

    2016-06-01

    The two-dimensional organic conductor α -(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO=135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from a low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO, the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T >TCO . Well into the insulating state, however, at T =80 K , the spectral response evidences a completely different electronically induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge carriers with a linear dispersion of the electronic bands found in α -(BEDT-TTF)2I3 at high pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.

  2. Amplitude-phase coupling and chirp in quantum-dot lasers: influence of charge carrier scattering dynamics.

    PubMed

    Lingnau, Benjamin; Chow, Weng W; Lüdge, Kathy

    2014-03-10

    We investigate the dependence of the amplitude-phase coupling in quantum-dot (QD) lasers on the charge-carrier scattering timescales. The carrier scattering processes influence the relaxation oscillation parameters, as well as the frequency chirp, which are both important parameters when determining the modulation performance of the laser device and its reaction to optical perturbations. We find that the FM/AM response exhibits a strong dependence on the modulation frequency, which leads to a modified optical response of QD lasers when compared to conventional laser devices. Furthermore, the frequency response curve changes with the scattering time scales, which can allow for an optimization of the laser stability towards optical perturbations.

  3. Engineering Thin Films of a Tetrabenzoporphyrin toward Efficient Charge-Carrier Transport: Selective Formation of a Brickwork Motif.

    PubMed

    Takahashi, Kohtaro; Shan, Bowen; Xu, Xiaomin; Yang, Shuaijun; Koganezawa, Tomoyuki; Kuzuhara, Daiki; Aratani, Naoki; Suzuki, Mitsuharu; Miao, Qian; Yamada, Hiroko

    2017-03-08

    Tetrabenzoporphyrin (BP) is a p-type organic semiconductor characterized by the large, rigid π-framework, excellent stability, and good photoabsorption capability. These characteristics make BP and its derivatives prominent active-layer components in organic electronic and optoelectronic devices. However, the control of the solid-state arrangement of BP frameworks, especially in solution-processed thin films, has not been intensively explored, and charge-carrier mobilities observed in BP-based materials have stayed relatively low as compared to those in the best organic molecular semiconductors. This work concentrates on engineering the solid-state packing of a BP derivative, 5,15-bis(triisopropylsilyl)ethynyltetrabenzoporphyrin (TIPS-BP), toward achieving efficient charge-carrier transport in its solution-processed thin films. The effort leads to the selective formation of a brickwork packing that has two dimensionally extended π-staking. The maximum field-effect hole mobility in the resulting films reaches 1.1 cm(2) V(-1) s(-1), which is approximately 14 times higher than the record value for pristine free-base BP (0.070 cm(2) V(-1) s(-1)). This achievement is enabled mainly through the optimization of three factors; namely, deposition process, cast solvent, and self-assembled monolayer that constitutes the dielectric surface. On the other hand, polarized-light microscopy and grazing-incident wide-angle X-ray diffraction analyses show that there remains some room for improvement in the in-plane homogeneity of molecular alignment, suggesting even higher charge-carrier mobilities can be obtained upon further optimization. These results will provide a useful basis for the polymorph engineering and morphology optimization in solution-processed organic molecular semiconductors.

  4. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    SciTech Connect

    Lim, Eunju E-mail: taguchi.d.aa@m.titech.ac.jp; Taguchi, Dai E-mail: taguchi.d.aa@m.titech.ac.jp Iwamoto, Mitsumasa E-mail: taguchi.d.aa@m.titech.ac.jp

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  5. Non-equilibrium of charged particles in swarms and plasmas—from binary collisions to plasma effects

    NASA Astrophysics Data System (ADS)

    Petrović, Z. Lj; Simonović, I.; Marjanović, S.; Bošnjaković, D.; Marić, D.; Malović, G.; Dujko, S.

    2017-01-01

    In this article we show three quite different examples of low-temperature plasmas, where one can follow the connection of the elementary binary processes (occurring at the nanoscopic scale) to the macroscopic discharge behavior and to its application. The first example is on the nature of the higher-order transport coefficient (second-order diffusion or skewness); how it may be used to improve the modelling of plasmas and also on how it may be used to discern details of the relevant cross sections. A prerequisite for such modeling and use of transport data is that the hydrodynamic approximation is applicable. In the second example, we show the actual development of avalanches in a resistive plate chamber particle detector by conducting kinetic modelling (although it may also be achieved by using swarm data). The current and deposited charge waveforms may be predicted accurately showing temporal resolution, which allows us to optimize detectors by adjusting the gas mixture composition and external fields. Here kinetic modeling is necessary to establish high accuracy and the details of the physics that supports fluid models that allows us to follow the transition to streamers. Finally, we show an example of positron traps filled with gas that, for all practical purposes, are a weakly ionized gas akin to swarms, and may be modelled in that fashion. However, low pressures dictate the need to apply full kinetic modelling and use the energy distribution function to explain the kinetics of the system. In this way, it is possible to confirm a well established phenomenology, but in a manner that allows precise quantitative comparisons and description, and thus open doors to a possible optimization.

  6. Homoleptic copper(I) arylthiolates as a new class of p-type charge carriers: structures and charge mobility studies.

    PubMed

    Che, Chi-Ming; Li, Cheng-Hui; Chui, Stephen Sin-Yin; Roy, V A L; Low, Kam-Hung

    2008-01-01

    Polymeric homoleptic copper(I) arylthiolates [Cu(p-SC(6)H(4)-X)](infinity) (X=CH(3) (1), H (2), CH(3)O (3), tBu (4), CF(3) (5), NO(2) (6), and COOH (7)) have been prepared as insoluble crystalline solids in good yields (75-95 %). Structure determinations by powder X-ray diffraction analysis have revealed that 1-3 and 6 form polymers of infinite chain length, with the copper atoms bridged by arylthiolate ligands. Weak intra-chain pi***pi stacking interactions are present in 1-3, as evidenced by the distances (3.210 A in 1, 3.016 A in 2, 3.401 A in 3) between the mean planes of neighboring phenyl rings. In the structure of 6, the intra-chain pi***pi interactions (d=3.711 A) are insignificant and the chain polymers are associated through weak, non-covalent C-H...O hydrogen-bonding interactions (d=2.586 A). Samples of 1-7 in their polycrystalline forms proved to be thermally stable at 200-300 degrees C; their respective decomposition temperatures are around 100 degrees C higher than that of the aliphatic analogue [Cu(SCH(3))](infinity). Data from in situ variable-temperature X-ray diffractometry measurements indicated that the structures of both 1 and 7 are thermally more robust than that of [Cu(SCH(3))](infinity). TEM analysis revealed that the solid samples of 1-5 and [Cu(SCH(3))](infinity) contained homogeneously dispersed crystalline nanorods with widths of 20-250 nm, whereas smaller plate-like nanocrystals were found for 6 and 7. SAED data showed that the chain polymers of 1-3 and [Cu(SCH(3))](infinity) similarly extend along the long axes of their nanorods. The nanorods of 1-5 and [Cu(SCH(3))](infinity) have been found to exhibit p-type field-effect transistor behavior, with charge mobility (micro) values of 10(-2)-10(-5) cm(2) V(-1) s(-1). Polycrystalline solid samples of 6 and 7 each showed a low charge mobility (<10(-6) cm(2) V(-1) s(-1)). The charge mobility values of field-effect transistors made from crystalline nanorods of 1-3 and [Cu(SCH(3))](infinity

  7. Localized Excited Charge Carriers Generate Ultrafast Inhomogeneous Strain in the Multiferroic BiFeO3

    DTIC Science & Technology

    2014-03-03

    4Department of Materials Science and Engineering and Materials Science Program, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA 5Department of... Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA 6Department of Applied Physics, Stanford University, Stanford...ferroelectric [10] or magnetic materials [11]. The photo- voltaic effect in this complex material and the underlying ultrafast carrier dynamics after

  8. 47 CFR 51.907 - Transition of price cap carrier access charges.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... paragraph (b)(3)(i) of this section in the calculation of its eligible recovery for 2012. (c) Step 2... and rate structure modifications. Except as provided in paragraph (c)(4) of this section, nothing in... to determine composite intrastate End Office Access Service rates, the carrier shall establish...

  9. 47 CFR 51.909 - Transition of rate-of-return carrier access charges.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    .... Beginning July 1, 2017, notwithstanding any other provision of the Commission's rules: (1) Each Rate-of... methodology: (i) Each Rate-of-Return Carrier shall calculate its 2017 interstate Target Composite Terminating End Office Access Rate. The 2017 interstate Target Composite Terminating End Office Access Rate...

  10. Manipulating charge density waves in 1 T -TaS2 by charge-carrier doping: A first-principles investigation

    NASA Astrophysics Data System (ADS)

    Shao, D. F.; Xiao, R. C.; Lu, W. J.; Lv, H. Y.; Li, J. Y.; Zhu, X. B.; Sun, Y. P.

    2016-09-01

    The transition-metal dichalcogenide 1 T -TaS2 exhibits a rich set of charge-density-wave (CDW) orders. Recent investigations suggested that using light or an electric field can manipulate the commensurate CDW (CCDW) ground state. Such manipulations are considered to be determined by charge-carrier doping. Here we use first-principles calculations to simulate the carrier-doping effect on the CCDW in 1 T -TaS2 . We investigate the charge-doping effects on the electronic structures and phonon instabilities of the 1 T structure, and we analyze the doping-induced energy and distortion ratio variations in the CCDW structure. We found that both in bulk and monolayer 1 T -TaS2 , the CCDW is stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric-field-induced hole doping increases the energy of the CCDW, so that the system transforms to a nearly commensurate CDW or a similar metastable state. On the other hand, even though the CCDW distortion is more stable upon in-plane electric-field-induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from the CCDW to a nearly commensurate CDW or a similar metastable state. We also estimate that hole doping can introduce potential superconductivity with a Tc of 6-7 K. Controllable switching of different states such as a CCDW/Mott insulating state, a metallic state, and even a superconducting state can be realized in 1 T -TaS2 . As a result, this material may have very promising applications in future electronic devices.

  11. Charge carrier dynamics of methylammonium lead iodide: from PbI₂-rich to low-dimensional broadly emitting perovskites.

    PubMed

    Klein, Johannes R; Flender, Oliver; Scholz, Mirko; Oum, Kawon; Lenzer, Thomas

    2016-04-28

    We provide an investigation of the charge carrier dynamics of the (MAI)(x)(PbI2)(1-x) system in the range x = 0.32-0.90 following the recently published "pseudobinary phase-composition processing diagram" of Song et al. (Chem. Mater., 2015, 27, 4612). The dynamics were studied using ultrafast pump-supercontinuum probe spectroscopy over the pump fluence range 2-50 μJ cm(-2), allowing for a wide variation of the initial carrier density. At high MAI excess (x = 0.90), low-dimensional perovskites (LDPs) are formed, and their luminescence spectra are significantly blue-shifted by ca. 50 nm and broadened compared to the 3D perovskite. The shift is due to quantum confinement effects, and the inhomogeneous broadening arises from different low-dimensional structures (predominantly 2D, but presumably also 1D and 0D). Accurate transient carrier temperatures are extracted from the transient absorption spectra. The regimes of carrier-carrier, carrier-optical phonon and acoustic phonon scattering are clearly distinguished. Perovskites with mole fractions x ≤ 0.71 exhibit extremely fast carrier cooling (ca. 300 fs) at low fluence of 2 μJ cm(-2), however cooling slows down significantly at high fluence of 50 μJ cm(-2) due to the "hot phonon effect" (ca. 2.8 ps). A kinetic analysis of the electron-hole recombination dynamics provides second-order recombination rate constants k2 which decrease from 5.3 to 1.5 × 10(-9) cm(3) s(-1) in the range x = 0.32-0.71. In contrast, recombination in the LDPs (x = 0.90) is more than one order of magnitude faster, 6.4 × 10(-8) cm(3) s(-1), which is related to the confined perovskite structure. Recombination in these LDPs should be however still slow enough for their potential application as efficient broadband emitters or solar light-harvesting materials.

  12. How photon pump fluence changes the charge carrier relaxation mechanism in an organic-inorganic hybrid lead triiodide perovskite.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Kazim, Samrana; Ahmad, Shahzada; Douhal, Abderrazzak

    2016-10-21

    This study explores the excitation wavelength and fluence dependence of processes occurring in formamidinium lead triiodide (FAPbI3) film using time-resolved transient absorption and terahertz spectroscopies. The results indicate that second-order processes are responsible for charge carrier recombination at low fluences of the absorbed photons (below 8.4 × 10(12) ph per cm(2)). An increase in fluence leads to the appearance and successive reduction of the time component assigned to the Auger recombination of free charge carriers (240-120 ps). Simultaneously, the bimolecular recombination time decreases from ∼1400 to ∼700 ps. Further increasing the pump fluence produces an exciton population that recombines in 6 ps. The comparison of two characteristic bleaching bands located at 480 and 775 nm provides evidence for the validity of the two valence bands model. Excitation with higher fluences results in a marked difference in the probed dynamics at these bands, reflecting the action of two excited states at the conduction band. Our results demonstrate that a single model cannot be applied in characterizing the perovskite absorber transitions at all pump fluences. These findings are relevant in understanding their operating mechanism under specific experimental conditions, which should differ for perovskite based solar cells, lasing media or photon detectors.

  13. The Effect of Diiodooctane on the Charge Carrier Generation in Organic Solar Cells Based on the Copolymer PBDTTT-C

    PubMed Central

    Zusan, Andreas; Gieseking, Björn; Zerson, Mario; Dyakonov, Vladimir; Magerle, Robert; Deibel, Carsten

    2015-01-01

    Microstructural changes and the understanding of their effect on photocurrent generation are key aspects for improving the efficiency of organic photovoltaic devices. We analyze the impact of a systematically increased amount of the solvent additive diiodooctane (DIO) on the morphology of PBDTTT-C:PC71BM blends and related changes in free carrier formation and recombination by combining surface imaging, photophysical and charge extraction techniques. We identify agglomerates visible in AFM images of the 0% DIO blend as PC71BM domains embedded in an intermixed matrix phase. With the addition of DIO, a decrease in the size of fullerene domains along with a demixing of the matrix phase appears for 0.6% and 1% DIO. Surprisingly, transient absorption spectroscopy reveals an efficient photogeneration already for the smallest amount of DIO, although the largest efficiency is found for 3% DIO. It is ascribed to a fine-tuning of the blend morphology in terms of the formation of interpenetrating donor and acceptor phases minimizing geminate and nongeminate recombination as indicated by charge extraction experiments. An increase in the DIO content to 10% adversely affects the photovoltaic performance, most probably due to an inefficient free carrier formation and trapping in a less interconnected donor-acceptor network. PMID:25655785

  14. Tungsten-based nanomaterials (WO3 & Bi2WO6): Modifications related to charge carrier transfer mechanisms and photocatalytic applications

    NASA Astrophysics Data System (ADS)

    Girish Kumar, S.; Koteswara Rao, K. S. R.

    2015-11-01

    Heterogeneous photocatalysis is an ideal green energy technology for the purification of wastewater. Although titania dominates as the reference photocatalyst, its wide band gap is a bottleneck for extended utility. Thus, search for non-TiO2 based nanomaterials has become an active area of research in recent years. In this regard, visible light absorbing polycrystalline WO3 (2.4-2.8 eV) and Bi2WO6 (2.8 eV) with versatile structure-electronic properties has gained considerable interest to promote the photocatalytic reactions. These materials are also explored in selective functional group transformation in organic reactions, because of low reduction and oxidation potential of WO3 CB and Bi2WO6 VB, respectively. In this focused review, various strategies such as foreign ion doping, noble metal deposition and heterostructuring with other semiconductors designed for efficient photocatalysis is discussed. These modifications not only extend the optical response to longer wavelengths, but also prolong the life-time of the charge carriers and strengthen the photocatalyst stability. The changes in the surface-bulk properties and the charge carrier transfer dynamics associated with each modification correlating to the high activity are emphasized. The presence of oxidizing agents, surface modification with Cu2+ ions and synthesis of exposed facets to promote the degradation rate is highlighted. In depth study on these nanomaterials is likely to sustain interest in wastewater remediation and envisaged to signify in various green energy applications.

  15. Absorption of Light by Free Charge Carriers in the Crystalline CdS Under Intense Electron Irradiation

    NASA Astrophysics Data System (ADS)

    Kulikov, V. D.; Yakovlev, V. Yu.

    2016-09-01

    The process of light absorption by free electrons in the crystalline cadmium sulfide under irradiation by a nanosecond electron beam with the current density of 8-100 A/cm2 is studied. A superlinear increase in optical absorption is observed if the beam current density is increased from ~8 to 12 A/cm2. The nature of light absorption by thermalized electrons corresponds to the scattering on lattice defects. An increase in the exponent of the power dependence of light absorption on the wavelength with increasing beam current density is associated with the single and double ionization of donors and acceptors. It is concluded that accumulation of charge carriers occurs without capture by traps due to their impact ionization by secondary electrons, whose energy in the thermalization stage is comparable with the band gap of the crystal. According to the results of calculations, the capture cross section of electrons by holes at quadratic recombination is ~10-20 cm2, the Auger recombination coefficient is ~10-31 cm6•s-1, and the charge carrier concentration is ~1.3•1018-1.5•1019 cm-3.

  16. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate

    NASA Astrophysics Data System (ADS)

    Pal, P.; Ghosh, A.

    2016-07-01

    In this paper, we have studied the dynamics and relaxation of charge carriers in poly(methylmethacrylate)-lithium salt based polymer electrolytes plasticized with ethylene carbonate. Structural and thermal properties have been examined using X-ray diffraction and differential scanning calorimetry, respectively. We have analyzed the complex conductivity spectra by using power law model coupled with the contribution of electrode polarization at low frequencies and high temperatures. The temperature dependence of the ionic conductivity and crossover frequency exhibits Vogel-Tammann-Fulcher type behavior indicating a strong coupling between the ionic and the polymer chain segmental motions. The scaling of the ac conductivity indicates that relaxation dynamics of charge carriers follows a common mechanism for all temperatures and ethylene carbonate concentrations. The analysis of the ac conductivity also shows the existence of a nearly constant loss in these polymer electrolytes at low temperatures and high frequencies. The fraction of free anions and ion pairs in polymer electrolyte have been obtained from the analysis of Fourier transform infrared spectra. It is observed that these quantities influence the behavior of the composition dependence of the ionic conductivity.

  17. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    NASA Astrophysics Data System (ADS)

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.

  18. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    PubMed Central

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic–organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current–voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode–nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  19. Ionic liquid based lithium battery electrolytes: charge carriers and interactions derived by density functional theory calculations.

    PubMed

    Angenendt, Knut; Johansson, Patrik

    2011-06-23

    The solvation of lithium salts in ionic liquids (ILs) leads to the creation of a lithium ion carrying species quite different from those found in traditional nonaqueous lithium battery electrolytes. The most striking differences are that these species are composed only of ions and in general negatively charged. In many IL-based electrolytes, the dominant species are triplets, and the charge, stability, and size of the triplets have a large impact on the total ion conductivity, the lithium ion mobility, and also the lithium ion delivery at the electrode. As an inherent advantage, the triplets can be altered by selecting lithium salts and ionic liquids with different anions. Thus, within certain limits, the lithium ion carrying species can even be tailored toward distinct important properties for battery application. Here, we show by DFT calculations that the resulting charge carrying species from combinations of ionic liquids and lithium salts and also some resulting electrolyte properties can be predicted.

  20. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    PubMed

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-05

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc.

  1. Electron-phonon interaction and charge carrier mass enhancement in SrTiO3.

    PubMed

    van Mechelen, J L M; van der Marel, D; Grimaldi, C; Kuzmenko, A B; Armitage, N P; Reyren, N; Hagemann, H; Mazin, I I

    2008-06-06

    We report a comprehensive THz, infrared and optical study of Nb-doped SrTiO3 as well as dc conductivity and Hall effect measurements. Our THz spectra at 7 K show the presence of an unusually narrow (<2 meV) Drude peak. For all carrier concentrations the Drude spectral weight shows a factor of three mass enhancement relative to the effective mass in the local density approximation, whereas the spectral weight contained in the incoherent midinfrared response indicates that the mass enhancement is at least a factor two. We find no evidence of a particularly large electron-phonon coupling that would result in small polaron formation.

  2. Geant4 Simulations of the SuperCDMS iZIP Detector Charge Carrier Propagation and FET Readout

    NASA Astrophysics Data System (ADS)

    Agnese, R.; Brandt, D.; Asai, M.; Cabrera, B.; Leman, S.; McCarthy, K.; Redl, P.; Saab, T.; Wright, D.

    2014-09-01

    The SuperCDMS experiment aims to directly detect dark matter particles called WIMPs (weakly interacting massive particles). The detectors measure phonon and ionization energy due to nuclear and electron recoils from incident particles. The SuperCDMS Detector Monte Carlo group uses Geant4 to simulate electron-hole pairs () and low temperature phonons. We use these simulations in order to study energy deposition in the detectors. Phonons and electron-hole pairs are tracked in a crystal detector. Because of the band structure of the crystals, the electrons undergo oblique propagation. The charge electrodes on each side of the detector are biased at different voltages while the phonon sensors are grounded. This creates a nearly uniform electric field through the bulk of the detector, with a complex shape near the surfaces. The electric field is calculated from interpolating on a tetrahedral mesh. The resulting TES phonon readout, as well as the FET charge readout are simulated. To calculate the FET readout, the Shockley-Ramo theorem is applied to simulate the current in the FET. The goal of this paper is to describe the theory and implementation of calculating the electric field, performing the charge carrier propagation, and simulating the FET readout of the SuperCDMS detectors.

  3. Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

    SciTech Connect

    Bondarenko, Anton; Vyvenko, Oleg

    2014-02-21

    Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of traps refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.

  4. Geant4 Simulations of SuperCDMS iZip Detector Charge Carrier Propagation and FET Readout

    NASA Astrophysics Data System (ADS)

    Agnese, Rob

    2013-04-01

    The SuperCDMS experiment aims to directly detect dark matter particles called WIMPs (Weakly Interacting Massive Particles). The detectors collect phonon and ionization energy of incident particles for analysis. The SuperCDMS Detector Monte Carlo group is implementing low temperature phonon and ionization simulations in Geant4 in order to study the response of the detectors to incident events. Phonons and electron-hole pairs are tracked in a low temperature crystal detector. The resulting TES phonon readout, as well as the FET charge readout are simulated. The Geant4 framework is well-suited to these tasks. The charge transport in the presence of a complex electric field is performed by calculating a tetrahedral mesh of potentials across the crystal volume. To calculate the FET readout, the Shockley-Ramo theorem is applied to simulate the current in the FET. The focus of this presentation will be on incorporating and using the software package, Qhull, to calculate a tetrahedral mesh from known potentials and then using barycentric coordinates to perform a linear interpolation to calculate the field. After calculating the field at each charge carrier's position, the Shockley-Ramo theorem is applied and the previous triangulation technique is performed to simulate the FET response

  5. Massively parallel kinetic Monte Carlo simulations of charge carrier transport in organic semiconductors

    NASA Astrophysics Data System (ADS)

    van der Kaap, N. J.; Koster, L. J. A.

    2016-02-01

    A parallel, lattice based Kinetic Monte Carlo simulation is developed that runs on a GPGPU board and includes Coulomb like particle-particle interactions. The performance of this computationally expensive problem is improved by modifying the interaction potential due to nearby particle moves, instead of fully recalculating it. This modification is achieved by adding dipole correction terms that represent the particle move. Exact evaluation of these terms is guaranteed by representing all interactions as 32-bit floating numbers, where only the integers between -222 and 222 are used. We validate our method by modelling the charge transport in disordered organic semiconductors, including Coulomb interactions between charges. Performance is mainly governed by the particle density in the simulation volume, and improves for increasing densities. Our method allows calculations on large volumes including particle-particle interactions, which is important in the field of organic semiconductors.

  6. Impact of speciation on the electron charge transfer properties of nanodiamond drug carriers

    NASA Astrophysics Data System (ADS)

    Sun, Baichuan; Barnard, Amanda S.

    2016-07-01

    Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove useful in designing drug delivery systems where the release of (selected) drugs needs to be sensitive to specific conditions at the point of delivery.Unpassivated diamond nanoparticles (bucky-diamonds) exhibit a unique surface reconstruction involving graphitization of certain crystal facets, giving rise to hybrid core-shell particles containing both aromatic and aliphatic carbon. Considerable effort is directed toward eliminating the aromatic shell, but persistent graphitization of subsequent subsurface-layers makes perdurable purification a challenge. In this study we use some simple statistical methods, in combination with electronic structure simulations, to predict the impact of different fractions of aromatic and aliphatic carbon on the charge transfer properties of the ensembles of bucky-diamonds. By predicting quality factors for a variety of cases, we find that perfect purification is not necessary to preserve selectivity, and there is a clear motivation for purifying samples to improve the sensitivity of charge transfer reactions. This may prove

  7. Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite

    NASA Astrophysics Data System (ADS)

    Dittrich, Th.; Lang, F.; Shargaieva, O.; Rappich, J.; Nickel, N. H.; Unger, E.; Rech, B.

    2016-08-01

    The diffusion or transport lengths of photo-generated charge carriers in CH3NH3PbI3 layers (thickness up to 1 μm) and powders have been directly measured with high accuracy by modulated surface photovoltage after Goodman. The values of the diffusion lengths of photo-generated charge carriers ranged from 200 nm to tenths of μm. In thin CH3NH3PbI3 layers, the transport lengths corresponded to the layer thickness whereas in thicker layers and in crystallites of CH3NH3PbI3 powders the grain size limited the diffusion length. For grains, the diffusion length of photo-generated charge carriers depended on the measurement conditions.

  8. A two-scale method for fast estimation of the charge-carrier diffusion coefficient in nano-porous semi-conductors

    NASA Astrophysics Data System (ADS)

    Ebrahimi, Fatemeh; Koochi, Hakimeh

    2017-01-01

    Current numerical methods that simultaneously take into account both spatial and energy disorders in charge-carrier transport in semi-conductor nano-porous structures are exact but involve intensive computations. Here, we will describe a two-scale simulation approach that incorporates all the relevant data on the morphology as well as the microscopic transport model. To test this method, we carried out extensive computer simulations for estimation of the charge-carrier diffusion coefficient in structures of different local and global morphologies. Excellent agreement was found between the results of our proposed model and the results emerged from full-scale calculations. The speed-up in the computations is almost four orders of magnitude. As such, this method provides us with a fast and straightforward approach to separate the role of local and global morphology on the charge-carrier transport and hence might be helpful in future designing of devices like dye-sensitized solar cells.

  9. Solar-induced direct biomass-to-electricity hybrid fuel cell using polyoxometalates as photocatalyst and charge carrier.

    PubMed

    Liu, Wei; Mu, Wei; Liu, Mengjie; Zhang, Xiaodan; Cai, Hongli; Deng, Yulin

    2014-01-01

    The current polymer-exchange membrane fuel cell technology cannot directly use biomass as fuel. Here we present a solar-induced hybrid fuel cell that is directly powered with natural polymeric biomasses, such as starch, cellulose, lignin, and even switchgrass and wood powders. The fuel cell uses polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperature. This solar-induced hybrid fuel cell combines some features of solar cells, fuel cells and redox flow batteries. The power density of the solar-induced hybrid fuel cell powered by cellulose reaches 0.72 mW cm(-2), which is almost 100 times higher than cellulose-based microbial fuel cells and is close to that of the best microbial fuel cells reported in literature. Unlike most cell technologies that are sensitive to impurities, the cell reported in this study is inert to most organic and inorganic contaminants present in the fuels.

  10. Solar-induced direct biomass-to-electricity hybrid fuel cell using polyoxometalates as photocatalyst and charge carrier

    NASA Astrophysics Data System (ADS)

    Liu, Wei; Mu, Wei; Liu, Mengjie; Zhang, Xiaodan; Cai, Hongli; Deng, Yulin

    2014-02-01

    The current polymer-exchange membrane fuel cell technology cannot directly use biomass as fuel. Here we present a solar-induced hybrid fuel cell that is directly powered with natural polymeric biomasses, such as starch, cellulose, lignin, and even switchgrass and wood powders. The fuel cell uses polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperature. This solar-induced hybrid fuel cell combines some features of solar cells, fuel cells and redox flow batteries. The power density of the solar-induced hybrid fuel cell powered by cellulose reaches 0.72 mW cm-2, which is almost 100 times higher than cellulose-based microbial fuel cells and is close to that of the best microbial fuel cells reported in literature. Unlike most cell technologies that are sensitive to impurities, the cell reported in this study is inert to most organic and inorganic contaminants present in the fuels.

  11. Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon

    SciTech Connect

    Antipov, S. A.; Belousov, Yu. M.; Solov'ev, V. R.

    2012-11-15

    The space-time distribution of charge carriers at the place of the location of a muonic atom formed when a negative muon is captured by an atom of the lattice has been numerically simulated taking into account the self-consistent electric field. The results of {mu}SR experiments with negative muons in diamond crystals have been explained and reasons for the difference in the behavior of the spin polarization of the negative muon in boron-doped diamond and in silicon have been revealed. The condition of the validity of the analytical solution of this problem has been obtained. It has been shown that the muonic atom in diamond, in contrast to silicon, does not form a neutral acceptor center in the paramagnetic state during the muon experiment and remains in the diamagnetic state of a positive ion.

  12. The Effect of Dynamical Image Forces on The Transport Properties of Charge Carriers and Excitons in Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Cherqui, Charles

    We examine coupled metal nanoparticle/semiconductor hybrid nano-stuctures and analyze the effect that the surface response metal nanoparticles (MNP) has on the transport properties of the system. This analysis is accomplished by treating surface plasmons as quantum oscillators. We find that charge carriers traveling in the nearby semiconductors experience a repulsion due to the ground state energy of the quantum SP (QSP). This effect is shown to be the quantum analogue of the ponderomotive effect found in plasma physics. We then extend the theory to examine the transport properties of carbon nano-tube excitons in the presence of localized SPs and show that this system maps onto a Fano-Anderson Hamiltonian. Through numerical simulation, we show that the emission patterns of the system are severely modified by the presence of localized surface plasmons.

  13. Dynamics and relaxation of charge carriers in poly(methylmethacrylate)-based polymer electrolytes embedded with ionic liquid

    NASA Astrophysics Data System (ADS)

    Pal, P.; Ghosh, A.

    2015-12-01

    In the present paper, we have studied dynamics and relaxation of the charge carriers in polymethylmethacrylate-lithium bis(trifluoromethane sulfonyl)imide polymer electrolytes embedded with 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide ionic liquid. We have analyzed the frequency dependent conductivity spectra using the random free-energy barrier model coupled with the contribution of electrode polarization in the low frequency region. The temperature dependence of ionic conductivity, and relaxation time obtained from the analysis of the spectra exhibits Vogel-Tammann-Fulcher type behavior. The Barton-Nakajima-Namikawa relation is consistent with the results obtained from the random free-energy barrier model. The scaling of ac conductivity spectra has been performed to understand the effect of temperature as well as the composition on the relaxation mechanism. The analysis of the ac conductivity also clearly indicates the existence of a nearly constant loss phenomenon at low temperatures or at high frequencies.

  14. Charge Carriers in Planar and Meso-Structured Organic-Inorganic Perovskites: Mobilities, Lifetimes, and Concentrations of Trap States.

    PubMed

    Hutter, Eline M; Eperon, Giles E; Stranks, Samuel D; Savenije, Tom J

    2015-08-06

    Efficient solar cells have been obtained using thin films of solution-processed organic-inorganic perovskites. However, there remains limited knowledge about the relationship between preparation route and optoelectronic properties. We use complementary time-resolved microwave conductivity (TRMC) and photoluminescence (PL) measurements to investigate the charge carrier dynamics in thin planar films of CH3NH3PbI(3-x)Cl(x), CH3NH3PbI3, and their meso-structured analogues. High mobilities close to 30 cm(2)/(V s) and microsecond-long lifetimes are found in thin films of CH3NH3PbI(3-x)Cl(x), compared to lifetimes of only a few hundred nanoseconds in CH3NH3PbI3 and meso-structured perovskites. We describe our TRMC and PL experiments with a global kinetic model, using one set of kinetic parameters characteristic for each sample. We find that the trap density is less than 5 × 10(14) cm(-3) in CH3NH3PbI(3-x)Cl(x), 6 × 10(16) cm(-3) in the CH3NH3PbI3 thin film and ca. 10(15) cm(-3) in both meso-structured perovskites. Furthermore, our results imply that band-to-band recombination is enhanced by the presence of dark carriers resulting from unintentional doping of the perovskites. Finally, our general approach to determine concentrations of trap states and dark carriers is also highly relevant to other semiconductor materials.

  15. Photoinduced Charge Carrier Generation and Decay in Sequentially Deposited Polymer/Fullerene Layers: Bulk Heterojunction vs. Planar Interface

    SciTech Connect

    Nardes, A.; Ayzner, A.; Hammond, S.; Ferguson, A.; Schwartz, B.; Kopidakis, N.

    2012-04-05

    In this work, we use the time-resolved microwave conductivity (TRMC) technique to study the dynamics of charge carrier generation in sequentially deposited conjugated polymer/fullerene layers. These layers are either fully solution-processed, using orthogonal solvents for the layers of the polymer poly(3-hexylthiophene) (P3HT) and the fullerene phenyl-C{sup 61}-butyric acid methyl ester (PCBM), or prepared by thermally evaporating a C{sup 60} layer onto P3HT films. Our work is motivated by the remarkable efficiency of organic photovoltaic (OPV) devices using a sequentially processed P3HT/PCBM active layer. Here we use an electrodeless photoconductivity probe, so we can photoexcite the sample either through the polymer or the fullerene layer. We use samples with extremely thick P3HT films (2.4 {micro}m) and show that excitation from either side of both as-cast and thermally annealed sample yields virtually identical results, consistent with mixing of the PCBM into the polymer film. We also compare solution-deposited samples to samples made by thermally evaporating C{sup 60} on P3HT, and find that we can distinguish between charge generation in bulk-P3HT and at the polymer/fullerene interface. We show that, despite their morphological differences, the carrier dynamics in the sequentially processed samples resemble those of mixed, bulk heterojunction (BHJ) systems. All of this is consistent with the idea that PCBM readily mixes into the P3HT film in sequentially deposited P3HT/PCBM samples, although the total amount of fullerene mixed into the P3HT appears to be less than that typically used in an optimized BHJ. Finally, we discuss the implications for OPV device architectures prepared by sequential deposition from solution.

  16. Concentration and mobility of charge carriers in thin polymers at high temperature determined by electrode polarization modeling

    NASA Astrophysics Data System (ADS)

    Diaham, Sombel; Locatelli, Marie-Laure

    2012-07-01

    Charge carrier concentration (n0) and effective mobility (μeff) are reported in two polymer films (<10 μm) and in a very high temperature range (from 200 to 400 °C). This was possible thanks to an electrode polarization modeling of broadband dielectric spectroscopy data. It is shown that the glass transition temperature (Tg) occurrence has a strong influence on the temperature dependence of n0 and μeff. We carry out that n0 presents two distinct Arrhenius-like behaviors below and above Tg, while μeff exhibits a Vogel-Fulcher-Tamman behavior only above Tg whatever the polymer under study. For polyimide films, n0 varies from 1 × 1014 to 4 × 1016 cm-3 and μeff from 1 × 10-8 to 2 × 10-6 cm2 V-1 s-1 between 200 °C to 400 °C. Poly(amide-imide) films show n0 values between 6 × 1016 and 4 × 1018 cm-3 from 270 °C to 400 °C, while μeff varies between 1 × 10-10 and 2 × 10-7 cm2 V-1 s-1. Considering the activation energies of these physical parameters in the temperature range of investigation, n0 and μeff values appear as coherent with those reported in the literature at lower temperature (<80 °C). Surface charge carrier concentrations (nS) are reported and discussed for potential passivation (i.e., surface electrical insulation) applications. Polyimide films appear as good candidates due to nS values less than 1011 cm-2 up to 300 °C.

  17. Low Exciton-Phonon Coupling, High Charge Carrier Mobilities, and Multiexciton Properties in Two-Dimensional Lead, Silver, Cadmium, and Copper Chalcogenide Nanostructures.

    PubMed

    Ding, Yuchen; Singh, Vivek; Goodman, Samuel M; Nagpal, Prashant

    2014-12-18

    The development of two-dimensional (2D) nanomaterials has revealed novel physical properties, like high carrier mobilities and the tunable coupling of charge carriers with phonons, which can enable wide-ranging applications in optoelectronic and thermoelectric devices. While mechanical exfoliation of graphene and some transition metal dichalcogenides (e.g., MoS2, WSe2) has enabled their fabrication as 2D semiconductors and integration into devices, lack of similar syntheses for other 2D semiconductor materials has hindered further progress. Here, we report measurements of fundamental charge carrier interactions and optoelectronic properties of 2D nanomaterials made from two-monolayers-thick PbX, CdX, Cu2X, and Ag2X (X = S, Se) using colloidal syntheses. Extremely low coupling of charge carriers with phonons (2-6-fold lower than bulk and other low-dimensional semiconductors), high carrier mobilities (0.2-1.2 cm(2) V(-1) s(-1), without dielectric screening), observation of infrared surface plasmons in ultrathin 2D semiconductor nanostructures, strong quantum-confinement, and other multiexcitonic properties (different phonon coupling and photon-to-charge collection efficiencies for band-edge and higher-energy excitons) can pave the way for efficient solution-processed devices made from these 2D nanostructured semiconductors.

  18. Anomalous transition of major charge carriers from holes to electrons observed in single-crystal films of tungsten

    NASA Astrophysics Data System (ADS)

    Jiang, Y. C.; Liu, G. Z.; Gao, J.; Wang, J. F.

    2016-12-01

    Tungsten (W) films were grown on SrTi O3 substrates using pulsed laser deposition. X-ray diffraction and transmission electron microscopy demonstrated that these as-grown films are highly epitaxial and single crystalline with the [00 l ] orientation. A special lattice stacking for the W/STO interface is observed to significantly reduce the lattice mismatching, which can be explained by the coincidence lattice model. The Hall effect has been investigated over the temperature range of 4-330 K. An anomalous transition of the major charge carriers from holes to electrons was observed in these W films upon cooling. The threshold temperature, in which the sign of the Hall coefficient RH was reversed, was found to increase with the film thinning. With the sample's thickness reduced to several unit cells, its major carriers remained electrons even at room temperature. Calculations using the density functional perturbation theory revealed that such a transition from p type to n type could be attributed to the appearance of an electron pocket along the M-Γ direction induced by the lattice mismatching between the W film and SrTi O3 substrate.

  19. Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

    SciTech Connect

    Gaubas, E.; Ceponis, T.; Jasiunas, A.; Uleckas, A.; Vaitkus, J.; Cortina, E.; Militaru, O.

    2012-12-03

    The in situ examination of barrier capacitance charging, of generation and drift currents, and of carrier lifetime in Si structures during 25 MeV neutrons irradiation has been implemented to correlate radiation induced changes in carrier recombination, thermal release, and drift characteristics and to clarify their impact on detector performance. It has been shown that microwave probed photo-conductivity technique implemented in contact-less and distant manner can be a powerful tool for examination in wide dynamic range of carrier lifetime modified by radiation defects and for rather precise prediction of detector performance.

  20. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  1. Charge carrier dynamics investigation of CuInS2 quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

    NASA Astrophysics Data System (ADS)

    Bi, Ke; Sui, Ning; Zhang, Liquan; Wang, Yinghui; Liu, Qinghui; Tan, Mingrui; Zhou, Qiang; Zhang, Hanzhuang

    2016-12-01

    The role of ZnS shell on the photo-physical properties within CuInS2/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS2 and CuInS2/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

  2. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  3. Design of a phytosphingosine-containing, positively-charged nanoemulsion as a colloidal carrier system for dermal application of ceramides.

    PubMed

    Yilmaz, Erol; Borchert, Hans-Hubert

    2005-05-01

    Positively charged oil/water (o/w) nanoemulsions (PN) are effective vehicles to change the permeability of the skin. This study focused on the preparation and characterisation of phytosphingosine (PS) containing PN (PPN) which serve as colloidal carriers for the dermal application of ceramide IIIB (CIIIB) and the stratum corneum (SC) lipids (PPNSC) such as ceramide III (CIII), cholesterol, and palmitic acid. The investigations were conducted using appropriate emulsification and homogenisation processing conditions to optimise PPNSC with regard to droplet size, physical stability, and solubility of PS, CIII and CIIIB. A decrease in droplet size was observed through eight homogenisation cycles at a pressure of 500 bar and a temperature of 50 degrees C. Above these optimal values, an increase in droplet size was observed. PS and ceramides have low solubilities in oil and water. When Lipoid E-80 (LE80) was added to the oil phase, the solubility of PS and ceramides increased, indicating some interactions shown by DSC measurements. SC lipids and CIIIB could be successfully incorporated in PPN without producing any physical instability. The high stability of PPNSC is probably due to the presence of a hydrophilic (Tween 80) and a lipophilic surfactant (LE80), supported by the lipophilic cosurfactant PS, at the o/w interface. It was shown that PS was responsible for the positive charge and thus supported the high physical stability of PPNSC. This optimised emulsion was selected for further skin absorption evaluation.

  4. Charge carrier transport properties in polymer liquid crystals containing oxadiazole and amine moieties in the same side chain.

    PubMed

    Kawamoto, Masuki; Mochizuki, Hiroyuki; Ikeda, Tomiki; Iino, Hiroaki; Hanna, Jun-ichi

    2005-05-19

    Steady-state and transient photocurrent measurements were carried out to study the charge carrier transport properties of polymer liquid crystal (LC) containing oxadiazole (OXD) and amine moieties in the same side chain. The steady-state photocurrent measurement with asymmetric electrodes of ITO and Al and a short penetration depth of the illumination light indicated that both electrons and holes can be transported in this film. The transient hole photocurrent observed by time-of-flight (TOF) experiments was dispersive at room temperature. The hole drift mobility significantly depended on temperature and electric field and was determined to be 6.1 x 10(-8) cm2/Vs at a field of 9.1 x 10(5) V/cm. According to the disorder formalism, the Gaussian width of the density of states was determined to be 170 meV for holes. Despite the indication of possible electron transport in this film, we could not determine the electron mobility by TOF experiments due to strong dispersive photocurrent. We discuss the present charge transport properties of the film in relation to a large dipole attributed to an electrical push-pull structure of p-dimethylaminophenyl-substitited OXD moiety in polymer LC and its electroluminescent properties.

  5. Viologens as charge carriers in a polymer-based battery anode.

    PubMed

    Sen, Sujat; Saraidaridis, James; Kim, Sung Yeol; Palmore, G Tayhas R

    2013-08-28

    Viologens, either as anions in solution or as pendant substituents to pyrrole, were incorporated as dopants to electrodeposited films of polypyrrole. The resulting polymer films exhibited redox activity at -0.5 V vs Ag/AgCl. The film consisting of polypyrrole with pendant viologens exhibited the best charge-discharge behavior with a maximum capacity of 55 mAh/g at a discharge current of 0.25 mA/cm(2). An anode consisting of polypyrrole (pPy) doped with viologen (V) was coupled to a cathode consisting of pPy doped with 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid) (ABTS) to yield a polymer-based battery with a cell electromotive force (emf) of 1.0 V, maximum capacity of 16 mAh/g, and energy density of 15 Wh/kg.

  6. Thermally assisted tunneling of charge carriers between trapping sites in calcite (CaCO3) mineral

    NASA Astrophysics Data System (ADS)

    Kalita, J. M.; Wary, G.

    2016-10-01

    Thermally Stimulated Luminescence (TSL) mechanism of natural orange calcite mineral has been studied. The glow curve of X-ray irradiate sample has been studied in unannealed and 673 K annealed samples by a Computerized Glow Curve De-convolution (CGCD) technique. It has been observed that after exposure to X-ray, both the un-annealed and 673 K annealed samples show three distinct peaks at around 323, 360 and 409 K in the glow curves. Study on the effect of post-annealing treatment on the excited sample reveals that the 323 K peak can be thermally bleached by annealing at ∼340 K, however it is very significant that the 360 K TSL peak can't be bleached by increasing the post-annealing temperature up to 380 K. CGCD analysis reveals that the activation energies corresponding to the 323, 360 and 409 K peaks are found to be around 0.70, 0.60 and 1.30 eV respectively. The low activation energy peak observed at relatively high temperature and existence of the 360 K peak after postannealing the sample beyond its peak maximum temperature are due to thermally assisted tunneling of trapped charge from 1.30 to 0.70 eV trapping sites in calcite. This analysis leads to an important conclusion that though theoretically the glow peak observed at relatively high temperature should have high activation energy, but due to charge tunneling phenomenon between the trapping sites, glow peak observed at high temperature may have relatively low activation energy.

  7. Phase separation and charge carrier self-organization in semiconductor-multiferroic Eu0.8Ce0.2Mn2O5

    NASA Astrophysics Data System (ADS)

    Sanina, V. A.; Golovenchits, E. I.; Zalesskii, V. G.; Lushnikov, S. G.; Scheglov, M. P.; Gvasaliya, S. N.; Savvinov, A.; Katiyar, R. S.; Kawaji, H.; Atake, T.

    2009-12-01

    The state with a giant permittivity (ɛ'˜104) and ferromagnetism have been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite-multiferroic Eu0.8Ce0.2Mn2O5 in the investigations of x-ray diffraction, heat capacity, dielectric and magnetic properties, conductivity, and Raman light-scattering spectra of this material. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ɛ' including as-grown two-dimensional layers with doping impurities, charge carriers, and double-exchange-coupled Mn3+-Mn4+ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size one-dimensional superlattices, in which de Haas-van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal causes formation of a layered superstructure consisting of charged layers (with an excess Mn3+ concentration) alternating with dielectric layers of the initial crystal—the ferroelectricity due to charge-ordering state. Ferromagnetism results from double exchange between Mn3+ and Mn4+ ions by means of charge carriers in the charged layers. Temperature evolution of frequency shifts of Ag modes and quasielastic scattering in Raman-scattering spectra agree with the pattern of phase transitions in ECMO suggested.

  8. Ultrasonic coupling to optically generated charge carriers in CdS: Physical phenomena and applications. Ph.D. Thesis - Washington Univ., Saint Louis, Mo.

    NASA Technical Reports Server (NTRS)

    Heyman, J. S.

    1975-01-01

    Phonon-charge carrier interactions are studied as well as ultrasonic resonators. Sensitivity enhancement factors predicted by one dimensional resonator theory are verified and several sensitive ultrasonic experimental techniques are developed. Measurements are reported of an anomalous sign reversal of the acoustoelectric voltage in a CdS resonator. Applications of CdS as an ultrasonic power detector are described.

  9. Narrowing of band gap and effective charge carrier separation in oxygen deficient TiO2 nanotubes with improved visible light photocatalytic activity.

    PubMed

    Choudhury, Biswajit; Bayan, Sayan; Choudhury, Amarjyoti; Chakraborty, Purushottam

    2016-03-01

    Oxygen vacancies are introduced into hydrothermally processed TiO2 nanotube by vacuum calcination. Formation of oxygen vacancies modifies the local coordination in TiO2 as evident from Raman spectroscopy and secondary ion mass spectrometry (SIMS) results. The surface area is increased from 172.5m(2)/g in pure to 405.1m(2)/g in defective TiO2 nanotube. The mid-band gap electronic states created by oxygen vacancies are mostly responsible for the effective narrowing of band gap. Charge carrier separation is sufficiently prolonged as the charged oxygen defect states inhibit facile carrier recombination. With high surface area, narrowed band gap and separated charge carriers defective TiO2 nanotube is a suitable candidate in the photodegradation of methylene blue (MB) and phenol under visible light illumination. Photosensitized electron transfer from MB to the conduction band of TiO2 and the photodegradation of MB is facilitated in presence of high density of oxygen vacancies. Unlike MB, phenol absorbs in the UV region and does not easily excited under visible light. Phenol shows activity under visible light by forming charge transfer complex with TiO2. Defect trapped carriers become available at the phenol-TiO2 interface and finally interact with phenol molecule and degrade it.

  10. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Mahfouzi, Farzad

    Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages (e.g., MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single

  11. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires

    NASA Astrophysics Data System (ADS)

    Kaveh Baghbadorani, Masoud

    In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in 150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and time resolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium-silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs core shell NWs of 130 nm diameter. Plasmonic NWs with Au

  12. Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

    SciTech Connect

    Han, Sung Su

    1993-09-01

    Ion-induced conductivity has been used to investigate the detector characteristics of diamond detectors. Both integrated-charge, and time-resolved current measurements were performed to examine the mean carrier transport properties of diamond and the dynamics of charge collection under highly-localized and high-density excitation conditions. The integrated-charge measurements were conducted with a standard pulse-counting system with 241Am radioactivity as the excitation source for the detectors. The time-resolved current measurements were performed using a 70 GHz random sampling oscilloscope with the detectors incorporated into high-speed microstrip transmission lines and the excitation source for these measurements was an ion beam of either 5-MeV He+ or 10-MeV Si3+. The detectors used in both experiments can be described as metal-semiconductor-metal (MSM) devices where a volume of the detector material is sandwiched between two metal plates. A charge collection model was developed to interpret the integrated-charge measurements which enabled estimation of the energy required to produce an electron-hole pair (ϵdi) and the mean carrier transport properties in diamond, such as carrier mobility and lifetime, and the behavior of the electrical contacts to diamond.

  13. Space charge in MNOS elements under the effect of ionizing radiation

    NASA Astrophysics Data System (ADS)

    Gurtov, V. A.; Nazarov, A. I.; Stepanov, V. E.

    1987-07-01

    Experimental results are presented on the formation of radiation-induced space charge in MNOS elements under applied voltage. The separation of electron-hole pairs in silicon nitride and the injection of carriers from the semiconductor electrode are investigated by varying the thickness of the SiO2 sublayer. It is shown that the radiation-induced space charge is due to nonequilibrium electrons and holes captured at deep centers in the subbarrier dielectric.

  14. Ohm's Law for a Bipolar Semiconductor: The Role of Carrier Concentration and Energy Nonequilibria

    NASA Astrophysics Data System (ADS)

    Lashkevych, Igor; Titov, Oleg Yu.; Gurevich, Yuri G.

    2017-01-01

    The effective linear electrical conductivity of a nondegenerate bipolar semiconductor, sandwiched between two metals, is investigated taking into account both its nonequilibrium charge carriers (both electrons and holes) and nonequilibrium temperature. We stress that even in the linear perturbative approximation both carrier concentration and energy nonequilbria arise automatically when an electrical current flows. The expression for the effective electrical conductivity is obtained and shown to depend on the electron and hole electrical conductivity, the thermal conductivity, the bandgap, charge carriers lifetimes, and both bulk and surface recombination rates. The effective electrical conductivity is equal to the classical result, i.e., the sum of the electron and hole electrical conductivities, only if the surface recombination rate at the interface is sufficiently strong or the charge carrier lifetime is sufficiently small. In this article, partial cases are considered, specifically, semiconductors with small and large thermal conductivities, semiconductors with monopolar electron and monopolar holes, strong and weak surface recombination rates, and small and large charge carrier lifetimes. Expressions for the effective electrical conductivity are obtained in all partial cases.

  15. The photovoltaic effect and charge carrier mobility in layered compositions of bithiophene or related rotaxane copolymer with C70 fullerene derivative

    NASA Astrophysics Data System (ADS)

    Kostromin, S. V.; Malov, V. V.; Tameev, A. R.; Bronnikov, S. V.; Farcas, A.

    2017-02-01

    Organic photovoltaic cells with a bulk heterojunction have been manufactured in which the photoactive layer consists of a mixture of bithiophene copolymer or related rotaxane with a fullerene derivative (PC70BM). The mobility of charge carriers in photoactive layers has been determined, the current-voltage characteristics of photovoltaic cells have been measured, and the energy level diagram of cell components has been constructed. It is established that the polyrotaxane component (macrocycle) insulates a part of thiophene fragments of the macromolecule, thus hindering the transport of carriers and leading to large energy losses for exciton dissociation, which results in a decreasing photovoltaic effect.

  16. Multifluid nonequilibrium simulation of arcjet thrusters

    NASA Astrophysics Data System (ADS)

    Miller, Scott Alan

    1994-01-01

    A detailed numerical model has been developed to study the gas dynamic flow in an electrothermal arcjet thruster. This two-temperature, Navier-Stokes model consistently incorporates viscosity, heat conduction, ohmic dissipation, collisional energy transfer between electrons and heavy species, ambipolar diffusion, nonequilibrium dissociation and ionization, and radiation. The fluid equations are solved by Mac Cormack's method while an iterative procedure is used to relax an electric potential equation, from which the current distribution in the thruster is obtained. Using hydrogen propellant, solutions are achieved for a range of input parameters and the underlying physics and internal structures of these arcjet flows are revealed. In particular, a mechanism for self-sustaining anodic arc attachment is identified. It is found that ambipolar diffusion from the arc core coupled with enhanced nonequilibrium dissociation and ionization in the outer flow provide enough charge carriers for the current to pass self-consistently between the arc core and the anode wall. Numerical solutions are compared with experimental results from the German TT1 radiatively-cooled arcjet thruster. Calculated discharge voltage is within 1-2% to 10% of experimental measurements, and predicted specific impulse is within 5-10% agreement over a range of applied currents and mass flow rates. In addition, flow solutions are used to explain observed trends in performance as quantities such as the specific power and mass flow rate are varied. An anode thermal model is constructed which yields more accurate predictions of the inlet gas and electrode wall temperatures, and this model is coupled to the arcjet flow solver in order to obtain a more self-consistent solution. Finally, a simplified stability analysis of the near-anode arc attachment region is performed. It is found that a localized ionization instability may be initiated in this region, but that the system is stable under the flow

  17. Optical absorption and DFT calculations in L-aspartic acid anhydrous crystals: Charge carrier effective masses point to semiconducting behavior

    NASA Astrophysics Data System (ADS)

    Silva, A. M.; Silva, B. P.; Sales, F. A. M.; Freire, V. N.; Moreira, E.; Fulco, U. L.; Albuquerque, E. L.; Maia, F. F., Jr.; Caetano, E. W. S.

    2012-11-01

    Density functional theory (DFT) computations within the local-density approximation and generalized gradient approximation in pure form and with dispersion correction (GGA+D) were carried out to investigate the structural, electronic, and optical properties of L-aspartic acid anhydrous crystals. The electronic (band structure and density of states) and optical absorption properties were used to interpret the light absorption measurements we have performed in L-aspartic acid anhydrous crystalline powder at room temperature. We show the important role of the layered spatial disposition of L-aspartic acid molecules in anhydrous L-aspartic crystals to explain the observed electronic and optical properties. There is good agreement between the GGA+D calculated and experimental lattice parameters, with (Δa, Δb, Δc) deviations of (0.029,-0.023,-0.024) (units in Å). Mulliken [J. Chem. Phys.JCPSA60021-960610.1063/1.1740588 23, 1833 (1955)] and Hirshfeld [Theor. Chim. ActaTCHAAM0040-574410.1007/BF00549096 44, 129 (1977)] population analyses were also performed to assess the degree of charge polarization in the zwitterion state of the L-aspartic acid molecules in the DFT converged crystal. The lowest-energy optical absorption peaks related to transitions between the top of the valence band and the bottom of the conduction band involve O 2p valence states and C 1p and O 2p conduction states, with the carboxyl and COOH lateral chain group contributing significantly to the energy band gap. Among the calculated band gaps, the lowest GGA+D (4.49-eV) gap is smaller than the experimental estimate of 5.02 eV, as obtained by optical absorption. Such a wide-band-gap energy together with the small carrier effective masses estimated from band curvatures allows us to suggest that an L-aspartic acid anhydrous crystal can behave as a wide-gap semiconductor. A comparison of effective masses among directions parallel and perpendicular to the L-aspartic molecules layers reveals that charge

  18. Singular effect of crystallite size on the charge carrier generation and photocatalytic activity of nano-TiO2

    NASA Astrophysics Data System (ADS)

    Strauss, Mathias; Pastorello, Murilo; Sigoli, Fernando A.; Silva, Juliana M. de Souza e.; Mazali, Italo O.

    2014-11-01

    Photocatalytic processes on nanometric titanium oxide have been extensively studied from the standpoint of solar energy utilization and remediation of water and gas streams polluted with organic molecules. It is accepted that TiO2 crystallite size and crystalline phase are among the parameters involved in the control of the photocatalytic activity. However, while changing the catalyst nanoparticle size, other attributes important to assess photocatalytic activity may be modified, making thus difficult to define to which extension the photoactivity changes are related only to size differences. Therefore, aiming at studying exclusively the size effect and the parameters directly related to size on the photocatalytic activity of nanometric TiO2, in this work it was explored a method to synthesize TiO2 nanoparticles with controlled size, highly similar morphology and comparable phase and degree of crystallinity. A set composed of four samples of nano-TiO2 loaded porous Vycor glass, each sample having a specific TiO2 nanoparticle size, was tested on the photoactivated process of depollution of solutions of salicylic acid and methylene blue. The photocatalytic activity observed for the organic compounds tested was inversely proportional to the TiO2 nanoparticle size. An opposite tendency was observed for the generation of OH radicals during photocatalyst illumination, as more radicals are formed on the material containing the larger TiO2 nanoparticles. Results of this study suggest that photocatalytic activity of nano-TiO2 is less favored by the enhanced light absorption response and the higher generation of oxidative species observed for the larger nanoparticles. Better catalysts were obtained when nano-TiO2 exhibited high surface-to-volume ratio and had small recombination volumes, which respectively favors pollutant adsorption-desorption on catalyst surface and reduce the number of recombined charge carriers.

  19. Photoconductivity of CdTe Nanocrystal-Based Thin Films. Te2- Ligands Lead To Charge Carrier Diffusion Lengths Over 2 Micrometers

    SciTech Connect

    Crisp, Ryan W.; Callahan, Rebecca; Reid, Obadiah G.; Dolzhnikov, Dmitriy S.; Talapin, Dmitri V.; Rumbles, Garry; Luther, Joseph M.; Kopidakis, Nikos

    2015-11-16

    We report on photoconductivity of films of CdTe nanocrystals (NCs) using time-resolved microwave photoconductivity (TRMC). Spherical and tetrapodal CdTe NCs with tunable size-dependent properties are studied as a function of surface ligand (including inorganic molecular chalcogenide species) and annealing temperature. Relatively high carrier mobility is measured for films of sintered tetrapod NCs (4 cm2/(V s)). Our TRMC findings show that Te2- capped CdTe NCs show a marked improvement in carrier mobility (11 cm2/(V s)), indicating that NC surface termination can be altered to play a crucial role in charge-carrier mobility even after the NC solids are sintered into bulk films.

  20. The role of charge-transfer integral in determining and engineering the carrier mobilities of 9,10-di(2-naphthyl)anthracene compounds

    NASA Astrophysics Data System (ADS)

    Tse, S. C.; So, S. K.; Yeung, M. Y.; Lo, C. F.; Wen, S. W.; Chen, C. H.

    2006-05-01

    The charge transporting properties of t-butylated 9,10-di(2-naphthyl)anthracene (ADN) compounds have been investigated experimentally and computationally in relation to their molecular structures. The ADN compounds are found to be ambipolar with both electron and hole mobilities in the range of 1-4 × 10 -7 cm 2 V -1 s -1 (electric field 0.5-0.8 MV/cm). As the degree of t-butylation increases, the carrier mobility decreases progressively. The mobility reduction was examined by Marcus theory of reorganization energies. All ADN compounds possess similar reorganization energies of ˜0.3 eV. The reduction of carrier mobilities with increasing t-butylation can be attributed to a decrease in the charge-transfer integral or the wavefunction overlap.

  1. Disentangling energetic and charge-carrier dynamic influences on the open-circuit voltage in bulk-heterojunction solar-cells

    NASA Astrophysics Data System (ADS)

    Chelouche, A.; Magnifouet, G.; Al Ahmad, A.; Leclerc, N.; Heiser, T.; Lévêque, P.

    2016-12-01

    A combination of transient and static techniques has been applied to bulk-heterojunction solar-cells to gain insight into the influence of charge-carrier dynamics and of energy level shifts in the vicinity of the cathode on the open-circuit voltage. Devices with a different thermal-annealing history but with similar active layer-morphology were compared. P3HT:PC60BM bulk heterojunction solar-cells with a standard ITO/PEDOT:PSS/active-layer/Al were investigated. We show that the open-circuit voltage increase that occurs when a sample is annealed before or after cathode deposition is due roughly one third to a shift between the energetics of the photoactive blend adjacent to the cathode and that in the bulk of the photoactive layer and roughly two thirds to a significant increase in the charge-carrier lifetime for this type of solar-cell.

  2. Tuning THz emission properties of Bi2Sr2CaCu2O8+δ intrinsic Josephson junction stacks by charge carrier injection

    NASA Astrophysics Data System (ADS)

    Kizilaslan, O.; Rudau, F.; Wieland, R.; Hampp, J. S.; Zhou, X. J.; Ji, M.; Kiselev, O.; Kinev, N.; Huang, Y.; Hao, L. Y.; Ishii, A.; Aksan, M. A.; Hatano, T.; Koshelets, V. P.; Wu, P. H.; Wang, H. B.; Koelle, D.; Kleiner, R.

    2017-03-01

    We report on doping and undoping experiments of terahertz (THz) emitting intrinsic Josephson junction stacks, where the change in charge carrier concentration is achieved by heavy current injection. The experiments were performed on stand-alone structures fabricated from a Bi2Sr2CaCu2O{}8+δ single crystal near optimal doping. The stacks contained about 930 intrinsic Josephson junctions. On purpose, the doping and undoping experiments were performed over only a modest range of charge carrier concentrations, changing the critical temperature of the stack by less than 1 K. We show that both undoping and doping is feasible also for the large intrinsic Josephson junction stacks used for THz generation. Even moderate changes in doping introduce large changes in the THz emission properties of the stacks. The highest emission power was achieved after doping a pristine sample.

  3. Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

    NASA Technical Reports Server (NTRS)

    Burshtein, Z.; Jayatirtha, H. N.; Burger, A.; Butler, J. F.; Apotovsky, B.; Doty, F. P.

    1993-01-01

    Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

  4. The effect of CdSe/ZnS quantum dots on the rotational viscosity and charge carrier concentration of a nematic liquid crystal

    NASA Astrophysics Data System (ADS)

    Shcherbinin, D. P.; Konshina, E. A.; Solodkov, D. E.

    2015-08-01

    The addition of CdSe/ZnS quantum dots (QDs) with a core diameter of 3.5 nm at a concentration of 10 wt % leads to a 2.5-fold increase in the dynamic rotational viscosity of a 5CB nematic liquid crystal (NLC). A comparison of the diffusion currents in NLC cells filled with pure 5CB and a suspension with QDs shows evidence of an increase in the concentration of charge carriers in the latter case.

  5. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    SciTech Connect

    Vishnyakov, A. V.; Stuchinsky, V. A. Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A.

    2014-03-03

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  6. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

    NASA Astrophysics Data System (ADS)

    Vishnyakov, A. V.; Stuchinsky, V. A.; Brunev, D. V.; Zverev, A. V.; Dvoretsky, S. A.

    2014-03-01

    In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents jph being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at jph ≠ 0) charge-carrier diffusion length ld eff as a function of jph for jph → 0 inferred from our experimental data proved to be consistent with the behavior of ld eff vs jph as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

  7. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    SciTech Connect

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  8. 47 CFR 1.1154 - Schedule of annual regulatory charges and filing locations for common carrier services.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... facilities Fee amount Address 1. Microwave (Domestic Public Fixed) (Electronic Filing) (FCC Form 601 & 159) $25.00 FCC, P.O. Box 979097, St. Louis, MO 63197-9000 Carriers 1. Interstate Telephone Service Providers (per interstate and international end-user revenues (see FCC Form 499-A) .00349 FCC, Carriers,...

  9. In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors.

    PubMed

    Takeya, J; Kato, J; Hara, K; Yamagishi, M; Hirahara, R; Yamada, K; Nakazawa, Y; Ikehata, S; Tsukagoshi, K; Aoyagi, Y; Takenobu, T; Iwasa, Y

    2007-05-11

    Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity sigma(square) and Hall coefficient R(H). The Hall mobility mu(H) (identical with sigma(square)R(H)) reaches nearly 10 cm(2)/V s when relatively low-density carriers (<10(11) cm(-2)) distribute into the crystal. mu(H) rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjected to randomness of the amorphous gate insulators. The mechanism to realize high carrier mobility in the organic transistor devices involves intrinsic-semiconductor character of the high-purity organic crystals and diffusive bandlike carrier transport in the bulk.

  10. Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

    SciTech Connect

    Dauffy, L S; Koch, J A

    2005-10-20

    This report investigates the use of x-rays and electrons to excite a CVD polycrystalline diamond detector during a double pulse experiment to levels corresponding to those expected during a successful (1D clean burn) and a typical failed ignition (2D fizzle) shot at the National Ignition Facility, NIF. The monitoring of a failed ignition shot is the main goal of the diagnostic, but nevertheless, the study of a successful ignition shot is also important. A first large neutron pulse is followed by a smaller pulse (a factor of 1000 smaller in intensity) after 50 to 300 ns. The charge carrier densities produced during a successful and failed ignition shot are about 10{sup 15} e-h+/cm{sup 3} and 2.6* 10{sup 12} e-h+/cm{sup 3} respectively, which is lower than the 10{sup 16} e-h+/cm{sup 3} needed to saturate the diamond wafer due to charge recombination. The charge carrier density and the signal induced in the diamond detector are calculated as a function of the incident x-ray and electron energy, flux, and detector dimensions. For available thicknesses of polycrystalline CVD diamond detectors (250 {micro}m to 1000 {micro}m), a flux of over 10{sup 11} x-rays/cm{sup 2} (with x-ray energies varying from 6 keV to about 10 keV) or 10{sup 9} {beta}/cm{sup 2} (corresponding to 400 pC per electron pulse, E{sub {beta}} > 800 keV) is necessary to excite the detector to sufficient levels to simulate a successful ignition's 14 MeV peak. Failed ignition levels would require lower fluxes, over 10{sup 8} x-rays/cm{sup 2} (6 to 10 keV) or 10{sup 6} {beta}/cm{sup 2} (1 pC per electron pulse, E{sub {beta}} > 800 keV). The incident pulse must be delivered on the detector surface in several nanoseconds. The second pulse requires fluxes down by a factor of 1000. Several possible x-ray beam facilities are investigated: (1) the LBNL Advanced Light Source, (2) the Stanford SLAC and SPEAR, (3) the BNL National Synchrotron Light Source, (4) the ANL Advanced Photon Source, (5) the LLNL Janus

  11. Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-14

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  12. Charge-carrier dynamics in polycrystalline thin-film CuIn1-xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-01

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn1-xGaxSe2 (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn1-xGaxSe2 (with x ≈ 0.3) as 22 ± 2 cm2(Vs)-1. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  13. Enhanced Charge Carrier Transport and Device Performance Through Dual-Cesium Doping in Mixed-Cation Perovskite Solar Cells with Near Unity Free Carrier Ratios.

    PubMed

    Ye, Tao; Petrović, Miloš; Peng, Shengjie; Yoong, Jeremy Lee Kong; Vijila, Chellappan; Ramakrishna, Seeram

    2017-01-25

    PbI2-enriched mixed perovskite film [FA0.81MA0.15Pb(I0.836Br0.15)3] has been widely studied due to its great potential in perovskite solar cell (PSC) applications. Herein, a FA0.81MA0.15Pb(I0.836Br0.15)3 film has been fabricated with the temperature-dependent optical absorption spectra utilized to determine its exciton binding energy. A ∼13 meV exciton binding energy is estimated, and a near-unity fraction of free carriers out of the total photoexcitons has been obtained in the solar cell operating regime at equilibrium state. PSCs are fabricated with this mixed perovskite film, but a significant electron transport barrier at the TiO2-perovskite interface limited their performance. Cs2CO3 and CsI are then utilized as functional enhancers with which to substantially balance the electron and hole transport and increase the carriers (both electrons and holes) mobilities in PSCs, resulting in much-improved solar-cell performance. The modified PSCs exhibit reproducible power conversion efficiency (PCE) values with little hysteresis effect in the J-V curves, achieving PCEs up to 19.5% for the Cs2CO3-modified PSC and 20.6% when subsequently further doped with CsI.

  14. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure.

    PubMed

    Nazir, Safdar; Bernal, Camille; Yang, Kesong

    2015-03-11

    The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.

  15. Distinct glycan-charged phosphodolichol carriers are required for the assembly of the pentasaccharide N-linked to the Haloferax volcanii S-layer glycoprotein.

    PubMed

    Guan, Ziqiang; Naparstek, Shai; Kaminski, Lina; Konrad, Zvia; Eichler, Jerry

    2010-12-01

    In Archaea, dolichol phosphates have been implicated as glycan carriers in the N-glycosylation pathway, much like their eukaryal counterparts. To clarify this relation, highly sensitive liquid chromatography/mass spectrometry was employed to detect and characterize glycan-charged phosphodolichols in the haloarchaeon Haloferax volcanii. It is reported that Hfx. volcanii contains a series of C(55) and C(60) dolichol phosphates presenting saturated isoprene subunits at the α and ω positions and sequentially modified with the first, second, third and methylated fourth sugar subunits comprising the first four subunits of the pentasaccharide N-linked to the S-layer glycoprotein, a reporter of N-glycosylation. Moreover, when this glycan-charged phosphodolichol pool was examined in cells deleted of agl genes encoding glycosyltransferases participating in N-glycosylation and previously assigned roles in adding pentasaccharide residues one to four, the composition of the lipid-linked glycans was perturbed in the identical manner as was S-layer glycoprotein N-glycosylation in these mutants. In contrast, the fifth sugar of the pentasaccharide, identified as mannose in this study, is added to a distinct dolichol phosphate carrier. This represents the first evidence that in Archaea, as in Eukarya, the oligosaccharides N-linked to glycoproteins are sequentially assembled from glycans originating from distinct phosphodolichol carriers.

  16. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te125 NMR measurements in complex tellurides

    DOE PAGES

    Levin, E. M.

    2016-06-27

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T1, depends on both n and m* as 1/T1~(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*)2n2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficientmore » and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study AgxSbxGe50–2xTe50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.« less

  17. The effect of oxidation on charge carrier motion in PbS quantum dot thin films studied with Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Nguyen Hoang, Lan Phuong; Williams, Pheona; Moscatello, Jason; Aidala, Katherine E.; Aidala Group Team

    We developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in thin film devices. We investigate the effects of oxidation on thin films of Lead Sulfide (PbS) quantum dots with tetrabutyl-ammonium-iodide (TBAI) ligands in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin Probe Force Microscopy (KPFM) to measure the potential over time, we can record how the charge carriers respond to changing the backgate voltage with grounded source and drain electrodes. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the PbS film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We probe these trapped holes by applying different gate voltages and recording the change in potential at the surface. There are mixed reports about the effect of air exposure on thin films of PbS quantum dots, with initial exposure appearing to be beneficial to device characteristics. We study the change in current, mobility, and charge injection and extraction as measured by KPFM over hours and days of exposure to air. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  18. Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

    NASA Astrophysics Data System (ADS)

    Nichterwitz, Melanie; Caballero, Raquel; Kaufmann, Christian A.; Schock, Hans-Werner; Unold, Thomas

    2013-01-01

    Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

  19. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    NASA Astrophysics Data System (ADS)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  20. Charge Carrier Dynamics and Mobility Determined by Time-Resolved Terahertz Spectroscopy on Films of Nano-to-Micrometer-Sized Colloidal Tin(II) Monosulfide.

    PubMed

    Alberding, Brian G; Biacchi, Adam J; Walker, Angela R Hight; Heilweil, Edwin J

    2016-07-21

    Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient in the visible range, and earth abundant, non-toxic constituent elements. For these reasons, SnS has generated much interest for incorporation into optoelectronic devices, but little is known concerning the charge carrier dynamics, especially as measured by optical techniques. Here, as opposed to prior studies of vapor deposited films, phase-pure colloidal SnS was synthesized by solution chemistry in three size regimes, ranging from nanometer- to micron-scale (SnS small nanoparticles, SnS medium 2D nanosheets, and SnS large 2D μm-sheets), and evaluated by time-resolved terahertz spectroscopy (TRTS); an optical, non-contact probe of the photoconductivity. Dropcast films of the SnS colloids were studied by TRTS and compared to both thermally annealed films and dispersed suspensions of the same colloids. TRTS results revealed that the micron-scale SnS crystals and all of the annealed films undergo decay mechanisms during the first 200 ps following photoexcitation at 800 nm assigned to hot carrier cooling and carrier trapping. The charge carrier mobility of both the dropcast and annealed samples depends strongly on the size of the constituent colloids. The mobility of the SnS colloidal films, following the completion of the initial decays, ranged from 0.14 cm(2)/V·s for the smallest SnS crystals to 20.3 cm(2)/V·s for the largest. Annealing the colloidal films resulted in a ~ 20 % improvement in mobility for the large SnS 2D μm-sheets and a ~ 5-fold increase for the small nanoparticles and medium nanosheets.

  1. Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN

    NASA Astrophysics Data System (ADS)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-11-01

    Barrier height and Ideality factor of Ni/n-GaN Schottky diodes are measured by performing temperature dependent current-voltage measurements. The measured value of barrier height is found to be much smaller than the theoretically calculated Schottky-Mott barrier height for the Ni/n-GaN diodes. Furthermore, a high value of ideality factor (>2) is measured at low temperatures. In order to understand these results, we need to consider a double Gaussian distribution of barrier height where the two components are related to the thermionic emission and thermionic filed emission mediated by dislocation-assisted tunnelling of carriers across the Schottky barrier. Thermionic emission is seen to dominate at temperatures higher than 170 K while the dislocation-assisted tunnelling dominates at low temperatures. The value of characteristic tunnelling energy measured from the forward bias current-voltage curves also confirms the dominance of dislocation-assisted tunnelling at low temperatures which is strongly corroborated by the Hall measurements. However, the value of characteristic tunnelling energy for high temperature range cannot be supported by the Hall results. This discrepancy can be eliminated by invoking a two layer model to analyse the Hall data which confirms that the charged dislocations, which reach the sample surface from the layer-substrate interface, provide an alternate path for the transport of carriers. The dislocation-assisted tunnelling of carriers governs the values of Schottky diode parameters at low temperature and the same is responsible for the observed inhomogeneity in the values of barrier height. The present analysis is applicable wherever the charge transport characteristics are severely affected by the presence of a degenerate layer at GaN-Sapphire interface and dislocations lines pierce the Schottky junction to facilitate the tunnelling of carriers.

  2. Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Lindholm, F. A.; Sah, C. T.

    1976-01-01

    An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

  3. Self-recovery of mechanoluminescence in ZnS:Cu and ZnS:Mn phosphors by trapping of drifting charge carriers

    NASA Astrophysics Data System (ADS)

    Chandra, V. K.; Chandra, B. P.; Jha, Piyush

    2013-10-01

    The long time dream of mechanoluminescence (ML) research to fabricate mechanoluminescence white light sources and mechanoluminescence displays seems to be turning into reality after the recent demonstration of highly bright and durable mechanoluminescent flexible composite films with a brightness of ≈120 cd/m2 and durability over ≈100 000 repeated mechanical stresses by using a combination of copper-doped zinc sulfide (ZnS:Cu) particles and polydimethylsiloxane. The present paper explores that self-recovery of mechanoluminescence of deforming piezoelectric semiconductors takes place by trapping of drifting charge carriers in the presence of piezoelectric field. This may be useful in enhancing the intensity and durability of ML devices.

  4. Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells

    NASA Astrophysics Data System (ADS)

    Khatsevich, S.; Rich, D. H.; Keller, S.; DenBaars, S. P.

    2007-05-01

    We have examined the carrier capture dynamics and excitation dependent charge distributions of coupled InGaN/GaN multiple quantum well samples. We measured the temporal evolution of time-delayed cathodoluminescence (CL) spectra to study the temperature- and excitation-dependent transfer of carriers from a surrounding confinement region into a coupled single quantum well. Samples possessing two different structures for the confinement region [i.e., number of quantum wells (QWs) and varying widths] were examined with CL. In order to study state filling of the SQW and QWs in the confinement region, we calculated the quasi-Fermi levels and carrier densities by utilizing a model that involves self-consistent solutions of the nonlinear Poisson-Schrödinger equation for wurtzite QWs including strain, deformation potentials, and polarization fields. Band-edge and effective mass parameters were first obtained from a strain- and In composition-dependent k ṡp calculation for wurtzite InxGa1-xN, using a 6×6 kṡp Hamiltonian in the {0001} representation. The model shows that the difference in the quasi-Fermi levels between the confinement and SQW regions decreases with increasing excitation and temperature. Likewise, a reversal in the relative magnitude of the carrier densities between these two regions occurs at a certain temperature and excitation. Furthermore, the results for the model describing the steady-state excitation are consistent with those for the transient excitation in time-resolved CL, which also exhibit a marked increase in the rate of carrier transfer to the SQW region as the temperature increases.

  5. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    NASA Astrophysics Data System (ADS)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  6. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    SciTech Connect

    Teyssedre, G. Laurent, C.; Vu, T. T. N.

    2015-12-21

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30–60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10{sup −14}–10{sup −13} m{sup 2} V{sup −1} s{sup −1} for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  7. Nonequilibrium is different

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, T. R.; Dorfman, J. R.

    2015-08-01

    Nonequilibrium and equilibrium fluid systems differ due to the existence of long-range correlations in nonequilibrium that are not present in equilibrium, except at critical points. Here we examine fluctuations of the temperature, of the pressure tensor, and of the heat current in a fluid maintained in a nonequilibrium stationary state (NESS) with a fixed temperature gradient, a system in which the nonequilibrium correlations are especially long-ranged. For this particular NESS, our results show that (i) the mean-squared fluctuations in nonequilibrium differ markedly in their system-size scaling compared to their equilibrium counterparts, and (ii) there are large, nonlocal correlations of the normal stress in this NESS. These terms provide important corrections to the fluctuating normal stress in linearized Landau-Lifshitz fluctuating hydrodynamics.

  8. Two-dimensional Mineral [Pb2BiS3 ][AuTe2 ]: High mobility Charge Carriers in Single-atom-thick Layers

    NASA Astrophysics Data System (ADS)

    Fang, Lei; Im, J.; Stoumpos, C.; Shi, F.; Dravid, V.; Leroux, M.; Freeman, A.; Kwok, W.-K.,; Chung, D.-Y.; Kanatzidis, M.

    2015-03-01

    We report that [Pb2BiS3][AuTe2], known as a naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements and theoretical calculations show a property of multiband semimetal with compensated density of electrons and holes, which exhibit high hole carrier mobility of 1360 cm2/Vs. This material possesses an extremely large anisotropy 104, comparable to benchmark materials graphite. The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 106 m/s which are virtually identical to that of graphene. The weak interlayer coupling gives rise to the highly cleavable property of single crystal specimens, indicating a prospect for monolayer system. This research was supported by the DoE, BES, under Contract No. DE-AC02-06CH11357, and NUANCE Center at the Northwestern Univeristy.

  9. Optimization of charge carrier transport balance for performance improvement of PDPP3T-based polymer solar cells prepared using a hot solution.

    PubMed

    Wang, Jian; Zhang, Fujun; Zhang, Miao; Wang, Wenbin; An, Qiaoshi; Li, Lingliang; Sun, Qianqian; Tang, Weihua; Zhang, Jian

    2015-04-21

    Polymer solar cells (PSCs), with poly(diketopyrrolopyrrole-terthiophene) (PDPP3T):[6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the active layers, were fabricated using solutions of different temperatures. The best power conversion efficiency (PCE) of the PSCs prepared using a hot solution was about 6.22%, which is better than 5.54% for PSCs prepared using cool (room temperature) solutions and 5.85% for PSCs prepared using cool solutions with a 1,8-diiodooctane (DIO) solvent additive. The underlying reasons for the improved PCE of the PSCs prepared using a hot solution could be attributed to the more dispersive donor and acceptor distribution in the active layer, resulting in a better bi-continuous interpenetrating network for exciton dissociation and charge carrier transport. An enhanced and more balanced charge carrier transport in the active layer is obtained for the PSCs prepared using a hot solution, which can be determined from the J-V curves of the related hole-only and electron-only devices.

  10. Graded morphology in bulk-heterojunction solar cells based on colloidal semiconductor nanostructures: Directed charge-separation and facile carrier transport

    NASA Astrophysics Data System (ADS)

    Dasgupta, Uttiya; Pal, Amlan J.

    2016-08-01

    We introduce density gradient of p- and n-type compound semiconductor nanostructures in bulk-heterojunction (BHJ) solar cells. The graded BHJs (GBHJs) were formed with the p-type copper-zinc-tin-sulfide (Cu2ZnSnS4) nanoparticles and n-type Bi2S3 nanorods, both of which were based on nontoxic and earth-abundant elements and were grown at a moderate reaction temperature (180 °C). The concentration gradient of the nanostructures in the GBHJs provided a preferred directionality of nano-depletion regions for directed charge separation and also a controlled vertical segregation for ever-increasing carrier-transport pathways during the charge-extraction process. A comparison of solar cell characteristics having a bilayer, a BHJ, and a GBHJ structure is being presented. The performance of the thickness-optimized devices for highest efficiency shows that the GBHJ offered an improved short-circuit current as compared to the bilayer and the BHJ structures and a higher fill-factor as compared to the BHJ device. The overall energy conversion efficiency (η) of GBHJ exceeded that of the other two heterojunctions. The advantages of GBHJ structures in yielding an improved η have been explained through an increased exciton dissociation process along with a lower carrier recombination as compared to the bilayer and the BHJ structures, respectively. Series and shunt resistances, which were derived from current-voltage characteristics and impedance spectroscopy, supported such analyses.

  11. Switching and memory effects governed by the hopping mechanism of charge carrier transfer in composite films based on conducting polymers and inorganic nanoparticles

    NASA Astrophysics Data System (ADS)

    Aleshin, A. N.; Alexandrova, E. L.

    2008-10-01

    The switching and memory effects in composite films based on conducting polymers [poly(phenylenevinylene), thiophene, and carbazole derivatives] and inorganic nanoparticles (ZnO, Si) are investigated. It is established that the introduction of inorganic nanoparticles (ZnO, Si) exhibiting strong acceptor properties into polymer materials leads to the appearance of memory effects, which manifest themselves in the transition of the polymer from a low-conductivity state to a high-conductivity state. For a number of composites, this transition is accompanied by the formation of a region with a negative differential resistance and a hysteresis in the current-voltage characteristics. It is demonstrated that the observed effects are determined by the mechanism of charge carrier transfer in the composite. In particular, the main mechanism of transport in films based on thiophene derivatives is associated with electrical conduction due to the tunneling of charge carriers between conducting regions embedded in a nonconducting matrix, whereas the dominant mechanism of transport in “polymer-semiconductor nanoparticle” composite films is hopping conduction, which is responsible for the effects observed in these objects.

  12. Multifluid Nonequilibrium Simulation of Arcjet Thrusters.

    NASA Astrophysics Data System (ADS)

    Miller, Scott Alan

    A detailed numerical model has been developed to study the gasdynamic flow in an electrothermal arcjet thruster. This two-temperature, Navier-Stokes model consistently incorporates viscosity, heat conduction, ohmic dissipation, collisional energy transfer between electrons and heavy species, ambipolar diffusion, nonequilibrium dissociation and ionization, and radiation. The fluid equations are solved by MacCormack's method while an iterative procedure is used to relax an electric potential equation, from which the current distribution in the thruster is obtained. Using hydrogen propellant, solutions are achieved for a range of input parameters and the underlying physics and internal structures of these arcjet flows are revealed. In particular, a mechanism for self-sustaining anodic arc attachment is identified. It is found that ambipolar diffusion from the arc core coupled with enhanced nonequilibrium dissociation and ionization in the outer flow provide enough charge carriers for the current to pass self-consistently between the arc core and the anode wall. Numerical solutions are compared with experimental results from the German TT1 radiatively-cooled arcjet thruster. Calculated discharge voltage is within 1-2% to 10% of experimental measurements, and predicted specific impulse is within 5-10% agreement over a range of applied currents and mass flow rates. In addition, flow solutions are used to explain observed trends in performance as quantities such as the specific power and mass flow rate are varied. An anode thermal model is constructed which yields more accurate predictions of the inlet gas and electrode wall temperatures, and this model is coupled to the arcjet flow solver in order to obtain a more self-consistent solution. Finally, a simplified stability analysis of the near-anode arc attachment region is performed. It is found that a localized ionization instability may be initiated in this region, but that the system is stable under the flow conditions

  13. Improved understanding of the electronic and energetic landscapes of perovskite solar cells: high local charge carrier mobility, reduced recombination, and extremely shallow traps.

    PubMed

    Oga, Hikaru; Saeki, Akinori; Ogomi, Yuhei; Hayase, Shuzi; Seki, Shu

    2014-10-01

    The intriguing photoactive features of organic-inorganic hybrid perovskites have enabled the preparation of a new class of highly efficient solar cells. However, the fundamental properties, upon which the performance of these devices is based, are currently under-explored, making their elucidation a vital issue. Herein, we have investigated the local mobility, recombination, and energetic landscape of charge carriers in a prototype CH3NH3PbI3 perovskite (PVK) using a laser-flash time-resolved microwave conductivity (TRMC) technique. PVK was prepared on mesoporous TiO2 and Al2O3 by one or two-step sequential deposition. PVK on mesoporous TiO2 exhibited a charge carrier mobility of 20 cm(2) V(-1) s(-1), which was predominantly attributed to holes. PVK on mesoporous Al2O3, on the other hand, exhibited a 50% lower mobility, which was resolved into balanced contributions from both holes and electrons. A general correlation between crystal size and mobility was revealed irrespective of the fabrication process and underlying layer. Modulating the microwave frequency from 9 toward 23 GHz allowed us to determine the intrinsic mobilities of each PVK sample (60-75 cm(2) V(-1) s(-1)), which were mostly independent of the mesoporous scaffold. Kinetic and frequency analysis of the transient complex conductivity strongly support the superiority of the perovskite, based on a significant suppression of charge recombination, an extremely shallow trap depth (10 meV), and a low concentration of these trapped states (less than 10%). The transport mechanism was further investigated by examining the temperature dependence of the TRMC maxima. Our study provides a basis for understanding perovskite solar cell operation, while highlighting the importance of the mesoporous layer and the perovskite fabrication process.

  14. Charge carrier accumulation in lithium fluoride thin films due to Li-ion absorption by titania (100) subsurface.

    PubMed

    Li, Chilin; Gu, Lin; Guo, Xiangxin; Samuelis, Dominik; Tang, Kun; Maier, Joachim

    2012-03-14

    The thermodynamically required redistribution of ions at given interfaces is being paid increased attention. The present investigation of the contact LiF/TiO(2) offers a highly worthwhile example, as the redistribution processes can be predicted and verified. It consists in Li ion transfer from LiF into the space charge zones of TiO(2). We not only can measure the resulting increase of lithium vacancy conductivity in LiF, we also observe a transition from n- to p-type conductivity in TiO(2) in consistency with the generalized space charge model.

  15. Coupled optical absorption, charge carrier separation, and surface electrochemistry in surface disordered/hydrogenated TiO2 for enhanced PEC water splitting reaction.

    PubMed

    Behara, Dilip Kumar; Ummireddi, Ashok Kumar; Aragonda, Vidyasagar; Gupta, Prashant Kumar; Pala, Raj Ganesh S; Sivakumar, Sri

    2016-03-28

    The central governing factors that influence the efficiency of photoelectrochemical (PEC) water splitting reaction are photon absorption, effective charge-carrier separation, and surface electrochemistry. Attempts to improve one of the three factors may debilitate other factors and we explore such issues in hydrogenated TiO2, wherein a significant increase in optical absorption has not resulted in a significant increase in PEC performance, which we attribute to the enhanced recombination rate due to the formation of amorphization/disorderness in the bulk during the hydrogenation process. To this end, we report a methodology to increase the charge-carrier separation with enhanced optical absorption of hydrogenated TiO2. Current methodology involves hydrogenation of non-metal (N and S) doped TiO2 which comprises (1) lowering of the band gap through shifting of the valence band via less electronegative non-metal N, S-doping, (2) lowering of the conduction band level and the band gap via formation of the Ti(3+) state and oxygen vacancies by hydrogenation, and (3) material processing to obtain a disordered surface structure which favors higher electrocatalytic (EC) activity. This design strategy yields enhanced PEC activity (%ABPE = 0.38) for the N-S co-doped TiO2 sample hydrogenated at 800 °C for 24 h over possible combinations of N-S co-doped TiO2 samples hydrogenated at 500 °C/24 h, 650 °C/24 h and 800 °C/72 h. This suggests that hydrogenation at lower temperatures does not result in much increase in optical absorption and prolonged hydrogenation results in an increase in optical absorption but a decrease in charge carrier separation by forming disorderness/oxygen vacancies in the bulk. Furthermore, the difference in double layer capacitance (C(dl)) calculated from electrochemical impedance spectroscopy (EIS) measurements of these samples reflects the change in the electrochemical surface area (ECSA) and facilitates assessing the key role of surface

  16. Nonequilibrium molecular dynamics

    SciTech Connect

    Hoover, W.G. . Dept. of Applied Science Lawrence Livermore National Lab., CA )

    1990-11-01

    The development of nonequilibrium molecular dynamics is described, with emphasis on massively-parallel simulations involving the motion of millions, soon to be billions, of atoms. Corresponding continuum simulations are also discussed. 14 refs., 8 figs.

  17. Reduced exchange narrowing caused by gate-induced charge carriers in high-mobility donor-acceptor copolymers

    NASA Astrophysics Data System (ADS)

    Tsutsumi, Jun'ya; Matsuoka, Satoshi; Osaka, Itaru; Kumai, Reiji; Hasegawa, Tatsuo

    2017-03-01

    Variations in exciton absorption resulting from charge accumulation in various semiconducting donor-acceptor (DA) copolymer thin films were systematically investigated by gate modulation (GM) spectroscopy by using the field-effect transistor device structure. The GM spectra obtained for high-mobility DA copolymer thin films exhibited second-derivative like line shapes due to an effect of spectral broadening of ordinary exciton absorption spectra by accumulated charges. In contrast, the GM spectra obtained for relatively low-mobility DA copolymer thin films exhibited simple bleaching of exciton absorption spectra, as well as observed for non-DA-type polymers like poly(3-hexylthiophene-2,5-diyl) (P3HT). From a systematic comparison of the GM spectra with temperature-dependent absorption spectra for the polymers in solution, we found that the spectral broadening observed in the GM spectra can be attributed to a reduced effect on the exchange narrowing where excitonic transitions of individual polymer chains are coherently coupled within highly ordered crystalline domains in the polymer thin films. We discuss that the gate-induced charge accumulation in the polymer films effects to suppress the exciton coherence length, which contributes to the reduced exchange narrowing. We also discuss that the whole feature of the GM spectra can be understood in terms of a decomposition into ordered and disordered polymers and that the GM spectra can be used as fine probes for a degree of structural ordering in semiconductor channels of polymer field-effect transistors.

  18. Primary charge carrier dynamics of water-solubilized CdZnS/ZnS core/shell and CdZnS/ZnS·Pd nanoparticle adducts

    NASA Astrophysics Data System (ADS)

    Busby, Erik; Thibert, Arthur; Page, Leah E.; Jawaid, Ali M.; Snee, Preston T.; Larsen, Delmar S.

    2013-06-01

    The primary photodynamics of 5-nm CdZnS core, CdZnS/ZnS core/shell, and CdZnS/ZnS·Pd nanoparticle adducts are characterized with broadband ultrafast transient absorption spectroscopy. Photogenerated excitons in the CdZnS and CdZnS/ZnS nanoparticles exhibit long-lived (>20 ns) lifetimes and further functionalizing of the type-I CdZnS/ZnS core/shells with Pd nanoparticles resulted in rapid exciton quenching (<250 ps) due to the transfer of electrons from the CdZnS core into the Pd nanocrystals via tunneling through the insulating ZnS shell. The shell-induced surface trap passivation and near-unity charge carrier injection efficiency into a platinum-group metal nanoparticle shows potential for enhanced colloidal photocatalytic applications, while enhancing photostability.

  19. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    NASA Astrophysics Data System (ADS)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  20. Toward a theory for low-frequency spin dynamics in plane copper oxide superconductors: crossover from localized spins to weak coupling charge carriers with doping.

    PubMed

    Larionov, Igor A

    2011-06-22

    We explore for all wavevectors through the Brillouin zone the dynamic spin susceptibility χ(total)(+,-)(ω, q) that takes into account the interplay of localized and itinerant charge carriers. The imaginary part, Imχ(total)(+,-)(ω, q), has peaks at the antiferromagnetic wavevector Q = (π, π) and a diffusive-like, extremely narrow and sharp peak (symmetric ring of maxima |q| = q(0)) at very small wavevectors Q(0) is proportional to w/J ≈ 10(-6) with the nuclear magnetic/quadrupole resonance frequency ω and the superexchange coupling constant J. We demonstrate the capability of Imχ(total)(+,-)(ω, q) for plane copper (63)(1/T(1)) and oxygen (17)(1/T(1)) nuclear spin-lattice relaxation rate calculations from carrier free right up to optimally doped La(2 - x)Sr(x)CuO(4) and obtain the basic features of temperature and doping behavior for (63)(1/T(1)) in agreement with experimental observations.

  1. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    SciTech Connect

    Polster, S.; Jank, M. P. M.; Frey, L.

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  2. Charge carrier mobility in conjugated organic polymers: simulation of an electron mobility in a carbazole-benzothiadiazole-based polymer

    NASA Astrophysics Data System (ADS)

    Li, Yaping; Lagowski, Jolanta B.

    2011-08-01

    Inorganic (mostly silicon based) solar cells are important devices that are used to solve the world energy and environmental needs. Now days, organic solar cells are attracting considerable attention in the field of photovoltaic cells because of their low cost and processing flexibility. Often conjugated polymers are used in the construction of the organic solar cells. We study the conjugated polymers' charge transport using computational approach that involves the use of the density functional theory (DFT), semiempirical (ZINDO), and Monte Carlo (MC) theoretical methods in order to determine their transfer integrals, reorganization energies, transfer rates (with the use of Marcus-Hush equation) and mobilities. We employ the experimentally determined three dimensional (3D) structure of poly(9,9'-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) to estimate the electron mobility in a similar co-alternating polymer consisting of carbazole and benzothiadiazole units (C8BT). In agreement with our previous work, we found that including an orientational disorder in the crystal reduces the electron mobility in C8BT. We hope that the proposed computational approach can be used to predict charge mobility in organic materials that are used in solar cells.

  3. Time Evolution of Charge Carriers & Phonons after Photo-Excitation by an Ultra-Short Light Pulse in Bulk Germanium

    NASA Astrophysics Data System (ADS)

    Fahy, Stephen; Murphy-Armando, Felipe; Trigo, Mariano; Savic, Ivana; Murray, Eamonn; Reis, David

    We have calculated the time-evolution of carriers and generated phonons in Ge after ultrafast photo-excitation above the direct band-gap. The relevant electron-phonon and anharmonic phonon scattering rates are obtained from first-principles electronic structure calculations. Measurements of the x-ray diffuse scattering after excitation near the L point in the Brillouin zone find a relatively slow (5 ps, compared to the typical electron-phonon energy relaxation of the Gamma-L phonon) increase of the phonon population. We find this is due to emission caused by the scattering of electrons between the Delta and L valleys, after the initial depopulation of the Gamma valley. The relative slowness of this process is due to a combination of causes: (i) the finite time for the initial depopulation of the conduction Gamma valley; (ii) the associated electron-phonon coupling is relatively weaker (compared to Gamma-L, Gamma-Delta and Delta-Delta couplings) ; (iii) the TA associated phonon has a long lifetime and (iv) the depopulation of the Delta valley suppresses the phonon emission. Supported by Science Foundation Ireland, Grant 12/1A/1601.

  4. Absence of carrier separation in ambipolar charge and spin drift in p{sup +}-GaAs

    SciTech Connect

    Cadiz, F.; Paget, D.; Rowe, A. C. H.; Martinelli, L.; Arscott, S.

    2015-10-19

    The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p{sup +} GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.

  5. Lipopeptide-based micellar and liposomal carriers: Influence of surface charge and particle size on cellular uptake into blood brain barrier cells.

    PubMed

    Sydow, Karl; Nikolenko, Heike; Lorenz, Dorothea; Müller, Rainer H; Dathe, Margitta

    2016-12-01

    Lipopeptide-based micelles and liposomes were found to differ in cell recognition and uptake mode into blood brain barrier (BBB) endothelial cells. Here we analyse the role of size and surface charge of micelles and liposomes composed of different lipopeptide sequences with respect to uptake into human brain capillary (HBMEC) and aortic (HAoEC) endothelial cells. Comparable to the dipalmitoylated apolipoprotein E-derived P2A2, lipopeptides of cationic poly-arginine (P2Rn), poly-lysine (P2Kn) and an anionic glutamic-acid sequence (P2En) self assemble into micelles (12-14nm in diameter) with high surface charge density, and bind to small (SUVs, about 24nm in diameter) and large (LUV, about 100nm in diameter) liposomes at variable lipid to peptide ratios. The interaction pattern of the resulting particles with endothelial cells is highly variable as revealed by confocal laser scanning microscopic (CLSM) and fluorescence assisted cell sorting (FACS) studies. Micelles and SUVs with high P2A2 density are efficiently and selectively internalized into HBMEC. P2Kn micelles strongly accumulate in both the cytosol and at the cell membrane, while the interaction of liposomes tagged with a low amount of P2A2 and P2Kn with the cells was reduced. Anionic micelles seem to dissociate in the presence of cells and P2En molecules incorporate into the cellular membrane whereas the negatively charged liposomes hardly interact with cells. Surprisingly, all poly-R-based particles show high selectivity for HBMEC compared to HAoEC, independent of particle size and peptide surface density. The P2Rn-mediated internalization is highly efficient and partially clathrin-dependent. The oligo-R lipopeptide is considered to be most promising to selectively transport different drug carriers into the blood brain barrier.

  6. Strontium insertion in methlyammonium lead iodide: long charge carrier lifetime and high fill factor solar cells (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Momblona, Cristina; Gil-Escrig, Lidón; Ávila, Jorge; Pérez-Del-Rey, Daniel; Forgács, David; Sessolo, Michele; Bolink, Hendrik J.

    2016-09-01

    Organic-inorganic (hybrid) lead halide perovskites are taking the lead among the emerging photovoltaics technologies, thanks to the demonstration of power conversion efficiencies exceeding 20 %. Hybrid perovskites have a wide spectrum of desirable properties; they are direct bandgap semiconductors with very high absorption coefficients, high and balanced hole and electron mobility, and large diffusion length. A unique feature of these materials is their versatility in terms of bandgap energy, which can be tuned by simple exchange of their components. In this paper we present vacuum and hybrid deposition routes for the preparation of different organic-inorganic lead perovskite thin films, and their incorporation into efficient solar cells. The influence of the type of organic semiconductors used as hole/electron transport layer in p-i-n solar cells will be presented. We also discuss their electroluminescence properties, either for applications in light-emitting diodes or as a diagnostic tool of the optical and electronic quality of perovskite thin films. Finally, the effect of additives and dopants in the perovskite absorber as well as in the charge selective layers will be described.

  7. Nonequilibrium Tuning of the Thermal Casimir Effect

    NASA Astrophysics Data System (ADS)

    Dean, David S.; Lu, Bing-Sui; Maggs, A. C.; Podgornik, Rudolf

    2016-06-01

    In net-neutral systems correlations between charge fluctuations generate strong attractive thermal Casimir forces and engineering these forces to optimize nanodevice performance is an important challenge. We show how the normal and lateral thermal Casimir forces between two plates containing Brownian charges can be modulated by decorrelating the system through the application of an electric field, which generates a nonequilibrium steady state with a constant current in one or both plates, reducing the ensuing fluctuation-generated normal force while at the same time generating a lateral drag force. This hypothesis is confirmed by detailed numerical simulations as well as an analytical approach based on stochastic density functional theory.

  8. Position 170 of Rabbit Na+/Glucose Cotransporter (rSGLT1) Lies in the Na+ Pathway; Modulation of Polarity/Charge at this Site Regulates Charge Transfer and Carrier Turnover

    PubMed Central

    Huntley, Steven A.; Krofchick, Daniel; Silverman, Mel

    2004-01-01

    Positions 163, 166, and 173, within the putative external loop joining transmembrane segments IV and V of rabbit Na+/glucose cotransporter, form part of its Na+ interaction and voltage-sensing domain. Since a Q170C mutation within this region exhibits anomalous behavior, its function was further investigated. We used Xenopus oocytes coinjected with mouse T-antigen to enhance Q170C expression, and the two-microelectrode voltage-clamp technique. For Q170C, α-methyl D-glucopyranoside, phloridzin, and Na+ affinity values are equivalent to those of wild-type; but turnover is reduced ∼50%. Decreased [Na+] reduces Q170C, but not wild-type, charge transfer. Q170C presteady-state currents exhibit three time constants, τ, identical to wild-type. MTSES decreases maximal α-methyl D-glucopyranoside-induced currents by ∼64% and Na+ leak by ∼55%; phloridzin and Na+ affinity are unchanged. MTSES also reduces charge transfer (dithiothreitol-reversible) and Q170C turnover by ∼60–70%. MTSEA and MTSET protect against MTSES, but neither affect Q170C function. MTSES has no obvious effect on the τ-values. Q170A behaves the same as Q170C. The mutation Q170E affects voltage sensitivity and reduces turnover, but also appears to influence Na+ interaction. We conclude that 1), glutamine 170 lies in the Na+ pathway in rabbit Na+/glucose cotransporter and 2), altered polarity and charge at position 170 affect a cotransporter conformational state and transition, which is rate-limiting, but probably not associated with empty carrier reorientation. PMID:15240465

  9. Three-Dimensional Imaging of Lipid Gene-Carriers: Membrane Charge Density Controls Universal Transfection Behavior in Lamellar Cationic Liposome-DNA Complexes

    PubMed Central

    Lin, Alison J.; Slack, Nelle L.; Ahmad, Ayesha; George, Cyril X.; Samuel, Charles E.; Safinya, Cyrus R.

    2003-01-01

    Cationic liposomes (CLs) are used worldwide as gene vectors (carriers) in nonviral clinical applications of gene delivery, albeit with unacceptably low transfection efficiencies (TE). We present three-dimensional laser scanning confocal microscopy studies revealing distinct interactions between CL-DNA complexes, for both lamellar LαC and inverted hexagonal HIIC nanostructures, and mouse fibroblast cells. Confocal images of LαC complexes in cells identified two regimes. For low membrane charge density (σM), DNA remained trapped in CL-vectors. By contrast, for high σM, released DNA was observed in the cytoplasm, indicative of escape from endosomes through fusion. Remarkably, firefly luciferase reporter gene studies in the highly complex LαC-mammalian cell system revealed an unexpected simplicity where, at a constant cationic to anionic charge ratio, TE data for univalent and multivalent cationic lipids merged into a single curve as a function of σM, identifying it as a key universal parameter. The universal curve for transfection by LαC complexes climbs exponentially over ≈ four decades with increasing σM below an optimal charge density (σM*), and saturates for \\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\setlength{\\oddsidemargin}{-69pt} \\begin{document} \\begin{equation*}{\\sigma}_{{\\mathrm{M}}}>{\\sigma}_{M}^{{^\\ast}}\\end{equation*}\\end{document} at a value rivaling the high transfection efficiency of HIIC complexes. In contrast, the transfection efficiency of HIIC complexes is independent of σM. The exponential dependence of TE on σM for LαC complexes, suggests the existence of a kinetic barrier against endosomal fusion, where an increase in σM lowers the barrier. In the saturated TE regime, for both LαC complexes and HIIC, confocal microscopy reveals the dissociation of lipid and DNA. However, the lipid-released DNA is

  10. Electron Heating and Quasiparticle Tunnelling in Superconducting Charge Qubits

    NASA Technical Reports Server (NTRS)

    Shaw, M. D.; Bueno, J.; Delsing, P.; Echternach, P. M.

    2008-01-01

    We have directly measured non-equilibrium quasiparticle tunnelling in the time domain as a function of temperature and RF carrier power for a pair of charge qubits based on the single Cooper-pair box, where the readout is performed with a multiplexed quantum capacitance technique. We have extracted an effective electron temperature for each applied RF power, using the data taken at the lowest power as a reference curve. This data has been fit to a standard T? electron heating model, with a reasonable correspondence with established material parameters.

  11. Common Carrier Services.

    ERIC Educational Resources Information Center

    Federal Communications Commission, Washington, DC.

    After outlining the Federal Communications Commission's (FCC) responsibility for regulating interstate common carrier communication (non-broadcast communication whose carriers are required by law to furnish service at reasonable charges upon request), this information bulletin reviews the history, technological development, and current…

  12. Ultrafast Response of the Hubbard Model: Non-adiabatic TDDFT + DMFT versus Non-equilibrium DMFT Solution

    NASA Astrophysics Data System (ADS)

    Acharya, Shree Ram; Turkowski, Volodymyr; Rahman, Talat S.

    We study the ultrafast response of electrons in the one-band Hubbard model to an external laser-pulse perturbation by using the Non-adiabatic Time-Dependent Density Functional Theory + Dynamical Mean-Field Theory (TDDFT +DMFT) approach. The corresponding exchange-correlation kernel (XC) is obtained from the DMFT charge susceptibility by using the Quantum Monte Carlo solver for the impurity problem. Detailed analysis of the time-dependent excited charge density, the Fermi distribution function, and the spatially nonhomogeneous response (metallic domain growth), is performed for different values for the carrier density and local Coulomb repulsion. We compare the results with the corresponding non-equilibrium DMFT solutions, and demonstrate that non-adiabaticity (frequency-dependence) of the XC kernel is important in order to reproduce the non-equilibrium DMFT solution. Also, from the numerical results for the charge susceptibility, we obtain an approximate analytical expression for the XC kernel. Using this kernel, we reveal possible types of ''elementary'' excitations and the dynamics of metallic domain growth in the case of the one-band Hubbard model. Possible generalization of the approach to the multi-orbital case is discussed. Work supported in part by DOE Grant No. DOE-DE-FG02-07ER46354.

  13. Electrochemical Film Formation on Magnesium Metal in an Ionic Liquid That Dissolves Metal Triflate and Its Application to an Active Material with Anion Charge Carrier.

    PubMed

    Shiga, Tohru; Kato, Yuichi; Inoue, Masae

    2016-11-16

    Irregular metallic growth at the anode during recharging of batteries can seriously influence the safety of batteries. To address this problem, we have attempted to design active anode materials with anion charge carriers and recently observed the formation and dissolution of an electrochemical film by triflate anions (CF3SO3(-)) at the surface of magnesium in an ionic liquid (IL) electrolyte of Mg(CF3SO3)2, which represents a rare anode material. The effect of heterogeneous cations on film formation was examined in this work. In an IL that dissolves NaCF3SO3, sodium ions with a lower reduction potential than Mg(2+)/Mg would not be expected to assist film formation. However, to our surprise, we discovered that some sodium ions are involved in film formation. The sodium ions are believed to act as a cross-linking point for the formation of a film network, which resulted in fairly good reversibility for film formation. In a Ce(CF3SO3)3-IL electrolyte, an electrochemically formed film free of Ce(3+) was obtained. The trivalent cerium cations were deactivated and transformed to an oxide on Mg metal. However, the reversibility of film formation in the Ce(CF3SO3)3 system did not meet the expected level. By coupling the film formation and dissolution behavior with a V2O5 cathode, a rechargeable battery was fabricated with dual ion transport species of Na(+) or Ce(3+) for the cathode and CF3SO3(-) for the anode. The unique battery with NaCF3SO3 is demonstrated to exhibit good discharge/charge performance with long-term cyclability.

  14. Nonequilibrium phase transitions and a nonequilibrium critical point from anti-de Sitter space and conformal field theory correspondence.

    PubMed

    Nakamura, Shin

    2012-09-21

    We find novel phase transitions and critical phenomena that occur only outside the linear-response regime of current-driven nonequilibrium states. We consider the strongly interacting (3+1)-dimensional N = 4 large-N(c) SU(N(c)) supersymmetric Yang-Mills theory with a single flavor of fundamental N = 2 hypermultiplet as a microscopic theory. We compute its nonlinear nonballistic quark-charge conductivity by using the AdS/CFT correspondence. We find that the system exhibits a novel nonequilibrium first-order phase transition where the conductivity jumps and the sign of the differential conductivity flips at finite current density. A nonequilibrium critical point is discovered at the end point of the first-order regime. We propose a nonequilibrium steady-state analogue of thermodynamic potential in terms of the gravity-dual theory in order to define the transition point. Nonequilibrium analogues of critical exponents are proposed as well. The critical behavior of the conductivity is numerically confirmed on the basis of these proposals. The present work provides a new example of nonequilibrium phase transitions and nonequilibrium critical points.

  15. Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

    NASA Astrophysics Data System (ADS)

    Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

    2017-04-01

    Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

  16. Heterogeneous photocatalysts BiOX/NaBiO3 (X = Cl, Br, I): Photo-generated charge carriers transfer property and enhanced photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Ji, Lei; Wang, Haoren; Yu, Ruimin

    2016-10-01

    BiOX/NaBiO3 (X = Cl, Br, I) heterostructures were synthesized by a simple chemical etching method using haloid acid as etching agents to react with NaBiO3. Several characterization tools including X-ray powder diffraction (XRD), scanning electron microscope (SEM) and UV-vis diffuse reflectance spectra (UV-vis DRS) were employed for structural and composition analyses of the samples. The as-prepared heterogeneous samples exhibited more efficient photocatalytic activities than pure NaBiO3 and BiOX (X = Cl, Br, I) for the degradation of Rhodamine B (RhB) under visible light (or UV light) irradiation, which could be attributed to the formation of the p-n junction between p-BiOX (X = Cl, Br, I) and n-NaBiO3, which effectively suppresses the recombination of photo-generated electron-hole pairs. Terephthalic acid photoluminescence (TA-PL) probing test and trapping agents experiments demonstrated that radOH (or h+) was the dominant reactive species depend on the different band gap structure of the p-n heterojunctions. Possible transfer processes of photo-generated charge carriers were proposed based on the band structures of BiOX/NaBiO3 (X = Cl, Br, I) and the experimental results.

  17. Ferromagnetism and the effect of free charge carriers on electric polarization in the double perovskite Y2NiMnO6

    NASA Astrophysics Data System (ADS)

    Nhalil, Hariharan; Nair, Harikrishnan S.; Kumar, C. M. N.; Strydom, André M.; Elizabeth, Suja

    2015-12-01

    The double perovskite Y2NiMnO6 displays ferromagnetic transition at Tc≈81 K. The ferromagnetic order at low temperature is confirmed by the saturation value of magnetization (Ms) and also validated by the refined ordered magnetic moment values extracted from neutron powder diffraction data at 10 K. This way, the dominant Mn+4 and Ni+2 cationic ordering is confirmed. The cation-ordered P 21/n nuclear structure is revealed by neutron powder diffraction studies at 300 and 10 K. Analysis of the frequency-dependent dielectric constant and equivalent circuit analysis of impedance data take into account the bulk contribution to the total dielectric constant. This reveals an anomaly which coincides with the ferromagnetic transition temperature (Tc) . Pyrocurrent measurements register a current flow with onset near Tc and a peak at 57 K that shifts with temperature ramp rate. The extrinsic nature of the observed pyrocurrent is established by employing a special protocol measurement. It is realized that the origin is due to reorientation of electric dipoles created by the free charge carriers and not by spontaneous electric polarization at variance with recently reported magnetism-driven ferroelectricity in this material.

  18. Design of suitable carrier buffer for free-flow zone electrophoresis by charge-to-mass ratio and band broadening analysis.

    PubMed

    Kong, Fan-Zhi; Yang, Ying; He, Yu-Chen; Zhang, Qiang; Li, Guo-Qing; Fan, Liu-Yin; Xiao, Hua; Li, Shan; Cao, Cheng-Xi

    2016-09-01

    In this work, charge-to-mass ratio (C/M) and band broadening analyses were combined to provide better guidance for the design of free-flow zone electrophoresis carrier buffer (CB). First, the C/M analyses of hemoglobin and C-phycocyanin (C-PC) under different pH were performed by CLC Protein Workbench software. Second, band dispersion due to the initial bandwidth, diffusion, and hydrodynamic broadening were discussed, respectively. Based on the analyses of the C/M and band broadening, a better guidance for preparation of free-flow zone electrophoresis CB was obtained. Series of experiments were performed to validate the proposed method. The experimental data showed high accordance with our prediction allowing the CB to be prepared easily with our proposed method. To further evaluate this method, C-PC was purified from crude extracts of Spirulina platensis with the selected separation condition. Results showed that C-PC was well separated from other phycobiliproteins that have similar physicochemical properties, and analytical grade product with purity up to 4.5 (A620/A280) was obtained.

  19. Charge carrier resolved relaxation of the first excitonic state in CdSe quantum dots probed with near-infrared transient absorption spectroscopy.

    PubMed

    McArthur, Eric A; Morris-Cohen, Adam J; Knowles, Kathryn E; Weiss, Emily A

    2010-11-18

    This manuscript describes a global regression analysis of near-infrared (NIR, 900-1300 nm) transient absorptions (TA) of colloidal CdSe quantum dots (QDs) photoexcited to their first (1S(e)1S(3/2)) excitonic state. Near-IR TA spectroscopy facilitates charge carrier-resolved analysis of excitonic decay of QDs because signals in the NIR are due exclusively to absorptions of photoexcited electrons and holes, as probe energies in this region are not high enough to induce absorptions across the optical bandgap that crowd the visible TA spectra. The response of each observed component of the excitonic decay to the presence of a hole-trapping ligand (1-octanethiol) and an electron-accepting ligand (1,4-benzoquinone), and comparison of time constants to those for recovery of the ground state bleaching feature in the visible TA spectrum, allow for the assignment of the components to (i) a 1.6 ps hole trapping process, (ii) 19 ps and 274 ps surface-mediated electron trapping processes, and (iii) a ∼5 ns recombination of untrapped electrons.

  20. Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

    NASA Astrophysics Data System (ADS)

    Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2017-02-01

    By using electric-field-induced optical second harmonic generation (EFISHG) measurement and charge modulation spectroscopy (CMS), we studied carrier behavior and polarization reversal in ITO/ poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE))/pentacene/Au diodes with a ferroelectric P(VDF-TrFE) layer in terms of carrier energetics. The current-voltage (I-V) characteristics of the diodes showed three-step polarization reversal in the dark. However, the I-V was totally different under illumination and exhibited two-step behavior. EFISHG probed the internal electric field in the pentacene layer and accounted for the polarization reversal change due to charge accumulation at the pentacene/P(VDF-TrFE) interface. CMS probed the related carrier energetics and indicated that exciton dissociation in pentacene molecular states governed carrier accumulation at the pentacene/ferroelectric interface, leading to different polarization reversal processes in the dark and under light illumination. Combining EFISHG measurement and CMS provides us a way to study carrier energetics that govern polarization reversal in ferroelectric P(VDF-TrFE)/pentacene diodes.

  1. 47 CFR 69.105 - Carrier common line for non-price cap local exchange carriers.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Carrier common line for non-price cap local...) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Computation of Charges § 69.105 Carrier common line... shall be assessed upon all interexchange carriers that use local exchange common line facilities for...

  2. Giant THz photoconductivity and possible non-equilibrium superconductivity in metallic K3C60

    PubMed Central

    Mitrano, M.; Cantaluppi, A.; Nicoletti, D.; Kaiser, S.; Perucchi, A.; Lupi, S.; Di Pietro, P.; Pontiroli, D.; Riccò, M.; Clark, S. R.; Jaksch, D.; Cavalleri, A.

    2015-01-01

    The non-equilibrium control of emergent phenomena in solids is an important research frontier, encompassing effects like the optical enhancement of superconductivity 1 . Recently, nonlinear excitation 2 , 3 of certain phonons in bilayer cuprates was shown to induce superconducting-like optical properties at temperatures far above Tc 4,5,6. This effect was accompanied by the disruption of competing charge-density-wave correlations7,8, which explained some but not all of the experimental results. Here, we report a similar phenomenon in a very different compound. By exciting metallic K3C60 with mid-infrared optical pulses, we induce a large increase in carrier mobility, accompanied by the opening of a gap in the optical conductivity. Strikingly, these same signatures are observed at equilibrium when cooling metallic K3C60 below the superconducting transition temperature (Tc = 20 K). Although optical techniques alone cannot unequivocally identify non-equilibrium high-temperature superconductivity, we propose this scenario as a possible explanation of our results. PMID:26855424

  3. Interface Energetics and Charge Carrier Density Amplification by Sn-Doping in LaAlO3/SrTiO3 Heterostructure.

    PubMed

    Nazir, Safdar; Cheng, Jianli; Behtash, Maziar; Luo, Jian; Yang, Kesong

    2015-07-08

    Tailoring the two-dimensional electron gas (2DEG) at the n-type (TiO2)(0)/(LaO)(+1) interface between the polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) insulators can potentially provide desired functionalities for next-generation low-dimensional nanoelectronic devices. Here, we propose a new approach to tune the electronic and magnetic properties in the n-type LAO/STO heterostructure (HS) system via electron doping. In this work, we modeled four types of layer doped LAO/STO HS systems with Sn dopants at different cation sites and studied their electronic structures and interface energetics by using first-principles electronic structure calculations. We identified the thermodynamic stability conditions for each of the four proposed doped configurations with respect to the undoped LAO/STO interface. We further found that the Sn-doped LAO/STO HS system with Sn at Al site (Sn@Al) is energetically most favorable with respect to decohesion, thereby strengthening the interface, while the doped HS system with Sn at La site (Sn@La) exhibits the lowest interfacial cohesion. Moreover, our results indicate that all the Sn-doped LAO/STO HS systems exhibit the n-type conductivity with the typical 2DEG characteristics except the Sn@La doped HS system, which shows p-type conductivity. In the Sn@Al doped HS model, the Sn dopant exists as a Sn(4+) ion and introduces one additional electron into the HS system, leading to a higher charge carrier density and larger magnetic moment than that of all the other doped HS systems. An enhanced charge confinement of the 2DEG along the c-axis is also found in the Sn@Al doped HS system. We hence suggest that Sn@Al doping can be an effective way to enhance the electrical conduction and magnetic moment of the 2DEG in LAO/STO HS systems in an energetically favorable manner.

  4. Effect of Dual Cathode Buffer Layer on the Charge Carrier Dynamics of rrP3HT:PCBM Based Bulk Heterojunction Solar Cell.

    PubMed

    Singh, Ashish; Dey, Anamika; Das, Dipjyoti; Iyer, Parameswar Krishnan

    2016-05-04

    In bulk heterojunction (BHJ) solar cells, the buffer layer plays a vital role in enhancing the power conversion efficiency (PCE) by improving the charge carrier dynamics. A comprehensive understanding of the contacts is especially essential in order to optimize the performance of organic solar cells (OSCs). Although there are several fundamental reports on this subject, a proper correlation of the physical processes with experimental evidence at the photoactive layer and contact materials is essential. In this work, we incorporated three different additional buffer layers, namely, tris(8-hydroxyquinolinato) aluminum (Alq3), bathophenanthroline (BPhen) or bathocuproine (BCP) with LiF/Al as conventional cathode contact in both rrP3HT:PC61BM and rrP3HT:PC71BM blend BHJ solar cells and their corresponding photovoltaic performances were systematically correlated with their energy level diagram. The device with dual cathode buffer layer having ITO/PEDOT:PSS/blend polymer/BCP/LiF/Al configuration showed the best device performance with PCE, η = 4.96%, Jsc = 13.53 mA/cm(2), Voc = 0.60 V and FF= 61% for rrP3HT:PC71BM and PCE, η = 4.5% with Jsc = 13.3 mA/cm(2), Voc = 0.59 V and FF = 59% for rrP3HT:PC61BM. This drastic improvement in PCE in both the device configurations are due to the combined effects of better hole-blocking capacity of BCP and low work function provided by LiF/Al with the blend polymer. These results successfully explain the role of dual cathode buffer layers and their contribution to the PCE improvement and overall device performance with rrP3HT:PCBM based BHJ solar cell.

  5. Identifying barriers to charge-carriers in the bulk and surface regions of Cu2ZnSnS4 nanocrystal films by x-ray absorption fine structures (XAFSs)

    NASA Astrophysics Data System (ADS)

    Turnbull, Matthew J.; Vaccarello, Daniel; Yiu, Yun Mui; Sham, Tsun-Kong; Ding, Zhifeng

    2016-11-01

    Solar cell performance is most affected by the quality of the light absorber layer. For thin-film devices, this becomes a two-fold problem of maintaining a low-cost design with well-ordered nanocrystal (NC) structure. The use of Cu2ZnSnS4 (CZTS) NCs as the light absorber films forms an ideal low-cost design, but the quaternary structure makes it difficult to maintain a well-ordered layer without the use of high-temperature treatments. There is little understanding of how CZTS NC structures affect the photoconversion efficiency, the charge-carriers, and therefore the performance of the device manufactured from it. To examine these relationships, the measured photoresponse from the photo-generation of charge-carrier electron-hole pairs was compared against the crystal structure, as short-range and long-range crystal orders for the films. The photoresponse simplifies the electronic properties into three basic steps that can be associated with changes in energy levels within the band structure. These changes result in the formation of barriers to charge-carrier flow. The extent of these barriers was determined using synchrotron-based X-ray absorbance fine structure to probe the individual metal centers in the film, and comparing these to molecular simulations of the ideal extended x-ray absorbance fine structure scattering. This allowed for the quantification of bond lengths, and thus an interpretation of the distortions in the crystal lattice. The various characteristics of the photoresponse were then correlated to the crystallographic order and used to gain physical insight into barriers to charge-carriers in the bulk and surface regions of CZTS films.

  6. Identifying barriers to charge-carriers in the bulk and surface regions of Cu2ZnSnS4 nanocrystal films by x-ray absorption fine structures (XAFSs).

    PubMed

    Turnbull, Matthew J; Vaccarello, Daniel; Yiu, Yun Mui; Sham, Tsun-Kong; Ding, Zhifeng

    2016-11-28

    Solar cell performance is most affected by the quality of the light absorber layer. For thin-film devices, this becomes a two-fold problem of maintaining a low-cost design with well-ordered nanocrystal (NC) structure. The use of Cu2ZnSnS4 (CZTS) NCs as the light absorber films forms an ideal low-cost design, but the quaternary structure makes it difficult to maintain a well-ordered layer without the use of high-temperature treatments. There is little understanding of how CZTS NC structures affect the photoconversion efficiency, the charge-carriers, and therefore the performance of the device manufactured from it. To examine these relationships, the measured photoresponse from the photo-generation of charge-carrier electron-hole pairs was compared against the crystal structure, as short-range and long-range crystal orders for the films. The photoresponse simplifies the electronic properties into three basic steps that can be associated with changes in energy levels within the band structure. These changes result in the formation of barriers to charge-carrier flow. The extent of these barriers was determined using synchrotron-based X-ray absorbance fine structure to probe the individual metal centers in the film, and comparing these to molecular simulations of the ideal extended x-ray absorbance fine structure scattering. This allowed for the quantification of bond lengths, and thus an interpretation of the distortions in the crystal lattice. The various characteristics of the photoresponse were then correlated to the crystallographic order and used to gain physical insight into barriers to charge-carriers in the bulk and surface regions of CZTS films.

  7. Elucidating the band structure and free charge carrier dynamics of pure and impurities doped CH3NH3PbI(3-x)Cl(x) perovskite thin films.

    PubMed

    Zhang, Zhen-Yu; Chen, Xin; Wang, Hai-Yu; Xu, Ming; Gao, Bing-Rong; Chen, Qi-Dai; Sun, Hong-Bo

    2015-11-28

    CH3NH3PbI3-xClx perovskite material has been commonly used as the free charge generator and reservoir in highly efficient perovskite-based solid-state solar photovoltaic devices. However, many of the underlying fundamental photophysical mechanisms in this material such as the perovskite transition band structure as well as the dependent relationship between the carrier properties and lattice properties still lack sufficient understanding. Here, we elucidated the fundamental band structure of the pure CH3NH3PbI3-xClx pervoskite lattice, and then reported about the dependent relationship between the free charge carrier characteristic and the different CH3NH3PbI3-xClx pervoskite lattice thin films utilizing femtosecond time-resolved pump-probe technologies. The data demonstrated that the pure perovskite crystal band structure should only have one conduction and one valence band rather than dual valences, and the pure perovskite lattice could trigger more free charge carriers with a slower recombination rate under an identical pump intensity compared with the impurities doped perovskite crystal. We also investigated the perovskite film performance when exposed to moisture and water, the corresponding results gave us a dip in the optimization of the performance of perovskite based devices, and so as a priority this material should be isolated from moisture (water). This work may propose a deeper perspective on the comprehension for this material and it is useful for future optimization of applications in photovoltaic and light emission devices.

  8. Nonequilibrium thermodynamics of spacetime.

    PubMed

    Eling, Christopher; Guedens, Raf; Jacobson, Ted

    2006-03-31

    It has previously been shown that the Einstein equation can be derived from the requirement that the Clausius relation dS=deltaQ/T hold for all local acceleration horizons through each spacetime point, where is one-quarter the horizon area change in Planck units and deltaQ and T are the energy flux across the horizon and the Unruh temperature seen by an accelerating observer just inside the horizon. Here we show that a curvature correction to the entropy that is polynomial in the Ricci scalar requires a nonequilibrium treatment. The corresponding field equation is derived from the entropy balance relation dS=deltaQ/T+diS, where diS is a bulk viscosity entropy production term that we determine by imposing energy-momentum conservation. Entropy production can also be included in pure Einstein theory by allowing for shear viscosity of the horizon.

  9. Effective cytoplasmic release of siRNA from liposomal carriers by controlling the electrostatic interaction of siRNA with a charge-invertible peptide, in response to cytoplasmic pH

    NASA Astrophysics Data System (ADS)

    Itakura, Shoko; Hama, Susumu; Matsui, Ryo; Kogure, Kentaro

    2016-05-01

    Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is effectively released via electrostatic repulsion of siRNA with negatively charged SAPSP at cytoplasmic pH (7.4). The condensed complex of siRNA and positively-charged SAPSP at acidic pH (siRNA/SAPSP) was found to result in almost complete release of siRNA upon charge inversion of SAPSP at pH 7.4, with the resultant negatively-charged SAPSP having no undesirable interactions with endogenous mRNA. Moreover, liposomes encapsulating siRNA/SAPSP demonstrated knockdown efficiencies comparable to those of commercially available siRNA carriers. Taken together, SAPSP may be very useful as a siRNA condenser, as it facilitates effective cytoplasmic release of siRNA, and subsequent induction of specific RNAi effects.Condensing siRNA with cationic polymers is a major strategy used in the development of siRNA carriers that can avoid degradation by nucleases and achieve effective delivery of siRNA into the cytoplasm. However, ineffective release of siRNA from such condensed forms into the cytoplasm is a limiting step for induction of RNAi effects, and can be attributed to tight condensation of siRNA with the cationic polymers, due to potent electrostatic interactions. Here, we report that siRNA condensed with a slightly acidic pH-sensitive peptide (SAPSP), whose total charge is inverted from positive to negative in response to cytoplasmic pH, is

  10. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and 125Te NMR measurements in complex tellurides

    NASA Astrophysics Data System (ADS)

    Levin, E. M.

    2016-06-01

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S , depends on the free (mobile) carrier concentration, n , and effective mass, m*, as S ˜m*/n2 /3 . The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1 /T1 , depends on both n and m* as 1 /T1˜(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1 /T1˜(m*)2n2 /3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study A gxS bxG e50-2xT e50 , well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  11. Phonon and free-charge carrier properties in group-III nitride heterostructures investigated by spectroscopic ellipsometry and optical Hall effect

    NASA Astrophysics Data System (ADS)

    Schoeche, Stefan

    The material class of group-III nitrides gained tremendous technological importance for optoelectronic and high-power/high-frequency amplification devices. Tunability of the direct band gap from 0.65 eV (InN) to 6.2 eV (AlN) by alloying, high breakthrough voltages and intrinsic mobilities, as well as the formation of highly mobile 2d electron gases (2DEG) at heterointerfaces make these compounds ideal for many applications. GaN and Ga-rich alloys are well studied and current research is mainly device-oriented. For example, choice and quality of the gate dielectric significantly influence device performance in high-electron mobility transistors (HEMT) which utilize highly mobile 2DEGs at heterointerfaces. Experimental access to the 2DEG channel properties without influence from parasitic currents or contact properties are desirable. In- and Al-rich ternary alloys are less explored than Ga-rich compounds. For InN and In-rich alloys, while many material parameters such as stiffness constants or effective mass values are largely unknown, reliable p-type doping is a major challenge, also because p-type conducting channels are buried within highly conductive n-type material formed at the surface and interfaces preventing electrical characterization. For AlN and high-Al content alloys, doping mechanisms are not understood and reliable fabrication of material with high free-charge carrier (FCC) concentrations was achieved just recently. Difficulties to form ohmic contacts impair electrical measurements and optical characterization is impeded by lack of high-energy excitation sources. In this work, spectroscopic ellipsometry over the wide spectral range from the THz to VUV in combination with optical Hall effect (generalized ellipsometry with applied magnetic field) from THz to MIR are applied in order to investigate the phonon modes and FCC properties in group-III nitride heterostructures. Adequate model descriptions and analysis strategies are introduced which allow

  12. Available Energy via Nonequilibrium Thermodynamics.

    ERIC Educational Resources Information Center

    Woollett, E. L.

    1979-01-01

    Presents basic relations involving the concept of available energy that are derived from the local equations of nonequilibrium thermodynamics. The equations and applications of the local thermodynamic equilibrium LTD model are also presented. (HM)

  13. Non-Equilibrium Molecular Dynamics

    NASA Astrophysics Data System (ADS)

    Ciccotti, Giovanni; Kapral, Raymond; Sergi, Alessandro

    Statistical mechanics provides a well-established link between microscopic equilibrium states and thermodynamics. If one considers systems out of equilibrium, the link between microscopic dynamical properties and non-equilibrium macroscopic states is more difficult to establish [1,2]. For systems lying near equilibrium, linear response theory provides a route to derive linear macroscopic laws and the microscopic expressions for the transport properties that enter the constitutive relations. If the system is displaced far from equilibrium, no fully general theory exists to treat such systems. By restricting consideration to a class of non-equilibrium states which arise from perturbations (linear or non-linear) of an equilibrium state, methods can be developed to treat non-equilibrium states. Furthermore, non-equilibrium molecular dynamics (NEMD) simulation methods can be devised to provide estimates for the transport properties of these systems.

  14. Carrier Diagnosis

    MedlinePlus

    ... and Women with Hemophilia Inheritance of Hemophilia Definitions & Terminology Bleeding Symptoms Carrier Diagnosis When to Test for ... and Women with Hemophilia Inheritance of Hemophilia Definitions & Terminology Bleeding Symptoms Carrier Diagnosis When to Test for ...

  15. Carrier Transport and Related Effects in Detectors of the Cryogenic Dark Matter Search

    SciTech Connect

    Sundqvist, Kyle Michael

    2012-01-01

    The Cryogenic Dark Matter Search (CDMS) is searching for weakly-interacting massive particles (WIMPS), which could explain the dark matter problem in cosmology and particle physics. By simultaneously measuring signals from deposited charge and the energy in nonequilibrium phonons created by particle interactions in intrinsic germanium crystals at a temperature of 40 mK, a signature response for each event is produced. This response, combined with phonon pulse-shape information, allows CDMS to actively discriminate candidate WIMP interactions with nuclei from electromagnetic radioactive background which interacts with electrons. The challenges associated with these techniques are unique. Carrier scattering is dominated by the spontaneous emission of Luke-Neganov phonons due to zeropoint fluctuations of the lattice ions. Drift fields are maintained at only a few V/cm, else these emitted phonons would dominate the phonons of the original interaction. The dominant systematic issues with CDMS detectors are due to the effects of space charge accumulation. It has been an open question how space charge accrues, and by which of several potential recombination and ionization processes. In this work, we have simulated the transport of electrons and holes in germanium under CDMS conditions. We have implemented both a traditional Monte Carlo technique based on carrier energy, followed later by a novel Monte Carlo algorithm with scattering rates defined and sampled by vector momentum. This vector-based method provides for a full anisotropic simulation of carrier transport including free-fight acceleration with an anisotropic mass, and anisotropic scattering rates. With knowledge of steady state carrier dynamics as a function of applied field, the results of our Monte Carlo simulations allow us to make a wide variety of predictions for energy dependent processes for both electrons and holes. Such processes include carrier capture by charged impurities, neutral impurities, static

  16. Direct Imaging of Ultrafast Charge Carrier Dynamics in Semiconducting Nanowires Using Two-Photon Excitation and Spatially-Separated Pump-Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Kirschbrown, Justin Robert

    The increasing use of nanoscale materials in scientific research and device design places a greater emphasis on characterizing the heterogeneity of nanostructures. When designing electronic components around the use of individual nanoparticles, it is important to understand variability between seemingly identical particles produced in the same synthesis. To do this, we have developed an ultrafast optical microscope capable of studying single nanostructures with spatial resolution of hundreds of nanometers. Emission images of zinc oxide needle-like nanowires show a modulated pattern along the long axis of the wire that are attributed to the coupling of the optical field into structurally dependent resonance modes. Simulations suggest that these are size dependent hybrid modes, containing character of both whispering gallery and Fabry-Perot modes. By incorporating transient absorption pump-probe techniques into the microscope design, we can observe the recombination dynamics of excited carriers on femtosecond timescales following excitation. Due to the high resolution of the instrument, it is possible to observe the dynamics at different locations within a single nanostructure. This technique is used to study the correlation between the decay kinetics of silicon nanowires and doping density for a variety of surface treatments. The motion of excited carriers in silicon nanowires was directly imaged by holding the pump beam in a particular location and scanning the probe beam over the entire structure. The resulting images show free carriers spreading out from the area of excitation, leaving the immobile trapped carriers behind.

  17. Nonequilibrium thermodynamics of nucleation

    SciTech Connect

    Schweizer, M.; Sagis, L. M. C.

    2014-12-14

    We present a novel approach to nucleation processes based on the GENERIC framework (general equation for the nonequilibrium reversible-irreversible coupling). Solely based on the GENERIC structure of time-evolution equations and thermodynamic consistency arguments of exchange processes between a metastable phase and a nucleating phase, we derive the fundamental dynamics for this phenomenon, based on continuous Fokker-Planck equations. We are readily able to treat non-isothermal nucleation even when the nucleating cores cannot be attributed intensive thermodynamic properties. In addition, we capture the dynamics of the time-dependent metastable phase being continuously expelled from the nucleating phase, and keep rigorous track of the volume corrections to the dynamics. Within our framework the definition of a thermodynamic nuclei temperature is manifest. For the special case of nucleation of a gas phase towards its vapor-liquid coexistence, we illustrate that our approach is capable of reproducing recent literature results obtained by more microscopic considerations for the suppression of the nucleation rate due to nonisothermal effects.

  18. Nonequilibrium thermodynamics of nucleation.

    PubMed

    Schweizer, M; Sagis, L M C

    2014-12-14

    We present a novel approach to nucleation processes based on the GENERIC framework (general equation for the nonequilibrium reversible-irreversible coupling). Solely based on the GENERIC structure of time-evolution equations and thermodynamic consistency arguments of exchange processes between a metastable phase and a nucleating phase, we derive the fundamental dynamics for this phenomenon, based on continuous Fokker-Planck equations. We are readily able to treat non-isothermal nucleation even when the nucleating cores cannot be attributed intensive thermodynamic properties. In addition, we capture the dynamics of the time-dependent metastable phase being continuously expelled from the nucleating phase, and keep rigorous track of the volume corrections to the dynamics. Within our framework the definition of a thermodynamic nuclei temperature is manifest. For the special case of nucleation of a gas phase towards its vapor-liquid coexistence, we illustrate that our approach is capable of reproducing recent literature results obtained by more microscopic considerations for the suppression of the nucleation rate due to nonisothermal effects.

  19. Nonequilibrium thermodynamics of nucleation

    NASA Astrophysics Data System (ADS)

    Schweizer, M.; Sagis, L. M. C.

    2014-12-01

    We present a novel approach to nucleation processes based on the GENERIC framework (general equation for the nonequilibrium reversible-irreversible coupling). Solely based on the GENERIC structure of time-evolution equations and thermodynamic consistency arguments of exchange processes between a metastable phase and a nucleating phase, we derive the fundamental dynamics for this phenomenon, based on continuous Fokker-Planck equations. We are readily able to treat non-isothermal nucleation even when the nucleating cores cannot be attributed intensive thermodynamic properties. In addition, we capture the dynamics of the time-dependent metastable phase being continuously expelled from the nucleating phase, and keep rigorous track of the volume corrections to the dynamics. Within our framework the definition of a thermodynamic nuclei temperature is manifest. For the special case of nucleation of a gas phase towards its vapor-liquid coexistence, we illustrate that our approach is capable of reproducing recent literature results obtained by more microscopic considerations for the suppression of the nucleation rate due to nonisothermal effects.

  20. Carrier scattering in high-κ/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Zeng, Zaiping; Triozon, François; Niquet, Yann-Michel

    2017-03-01

    A significant degradation of the mobility has been repeatedly observed at low inversion density in high-κ/metal gate metal-oxide-semiconductor field-effect transistors. However, the scattering mechanisms responsible for this degradation are still debated. It is often assumed that the mobility is limited by remote charges (RCS) at the interface between SiO2 and HfO2. However, the amount of charges needed to reproduce the experimental mobilities is usually very high (a few 1013 cm-2), and does not seem to be consistent with the measured threshold voltages. Scattering by localized dipoles hardly solves these discrepancies. Here, we investigate the contribution from three alternative mechanisms in a non-equilibrium Green's functions framework: (i) scattering by band offset fluctuations at the SiO2/HfO2 interface, (ii) scattering by dielectric constant fluctuations in SiO2 and HfO2, and (iii) scattering by workfunction fluctuations in a granular metal gate. None of these mechanisms significantly shifts the threshold voltage. We show that mechanisms (i) and (iii) efficiently scatter the carriers at low inversion densities. This reduces the amount of RCS charges needed to reproduce the experimental data. RCS and these mechanisms show different dependences on the thickness of the HfO2 layer, which might help to identify the dominant contributions.

  1. Nonequilibrium fluctuation-dissipation inequality and nonequilibrium uncertainty principle.

    PubMed

    Fleming, C H; Hu, B L; Roura, Albert

    2013-07-01

    The fluctuation-dissipation relation is usually formulated for a system interacting with a heat bath at finite temperature, and often in the context of linear response theory, where only small deviations from the mean are considered. We show that for an open quantum system interacting with a nonequilibrium environment, where temperature is no longer a valid notion, a fluctuation-dissipation inequality exists. Instead of being proportional, quantum fluctuations are bounded below by quantum dissipation, whereas classically the fluctuations vanish at zero temperature. The lower bound of this inequality is exactly satisfied by (zero-temperature) quantum noise and is in accord with the Heisenberg uncertainty principle, in both its microscopic origins and its influence upon systems. Moreover, it is shown that there is a coupling-dependent nonequilibrium fluctuation-dissipation relation that determines the nonequilibrium uncertainty relation of linear systems in the weak-damping limit.

  2. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, Pavel; Gatti, Emilio

    1987-01-01

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  3. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1987-08-18

    A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

  4. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1984-02-24

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  5. Macroscopic heat transport equations and heat waves in nonequilibrium states

    NASA Astrophysics Data System (ADS)

    Guo, Yangyu; Jou, David; Wang, Moran

    2017-03-01

    Heat transport may behave as wave propagation when the time scale of processes decreases to be comparable to or smaller than the relaxation time of heat carriers. In this work, a generalized heat transport equation including nonlinear, nonlocal and relaxation terms is proposed, which sums up the Cattaneo-Vernotte, dual-phase-lag and phonon hydrodynamic models as special cases. In the frame of this equation, the heat wave propagations are investigated systematically in nonequilibrium steady states, which were usually studied around equilibrium states. The phase (or front) speed of heat waves is obtained through a perturbation solution to the heat differential equation, and found to be intimately related to the nonlinear and nonlocal terms. Thus, potential heat wave experiments in nonequilibrium states are devised to measure the coefficients in the generalized equation, which may throw light on understanding the physical mechanisms and macroscopic modeling of nanoscale heat transport.

  6. Nonequilibrium phase transitions in cuprates observed by ultrafast electron crystallography.

    PubMed

    Gedik, Nuh; Yang, Ding-Shyue; Logvenov, Gennady; Bozovic, Ivan; Zewail, Ahmed H

    2007-04-20

    Nonequilibrium phase transitions, which are defined by the formation of macroscopic transient domains, are optically dark and cannot be observed through conventional temperature- or pressure-change studies. We have directly determined the structural dynamics of such a nonequilibrium phase transition in a cuprate superconductor. Ultrafast electron crystallography with the use of a tilted optical geometry technique afforded the necessary atomic-scale spatial and temporal resolutions. The observed transient behavior displays a notable "structural isosbestic" point and a threshold effect for the dependence of c-axis expansion (Deltac) on fluence (F), with Deltac/F = 0.02 angstrom/(millijoule per square centimeter). This threshold for photon doping occurs at approximately 0.12 photons per copper site, which is unexpectedly close to the density (per site) of chemically doped carriers needed to induce superconductivity.

  7. Nonequilibrium stationary states and entropy.

    PubMed

    Gallavotti, G; Cohen, E G D

    2004-03-01

    In transformations between nonequilibrium stationary states, entropy might not be a well defined concept. It might be analogous to the "heat content" in transformations in equilibrium which is not well defined either, if they are not isochoric (i.e., do involve mechanical work). Hence we conjecture that in a nonequilibrium stationary state the entropy is just a quantity that can be transferred or created, such as heat in equilibrium, but has no physical meaning as "entropy content" as a property of the system.

  8. Nonequilibrium detonation of composite explosives

    SciTech Connect

    Nichols III, A.L.

    1997-07-01

    The effect of nonequilibrium diffusional flow on detonation velocities in composite explosives is examined. Detonation conditions are derived for complete equilibrium, temperature and pressure equilibrium, and two forms of pressure equilibrium. Partial equilibria are associated with systems which have not had sufficient time for transport to smooth out the gradients between spatially separate regions. The nonequilibrium detonation conditions are implemented in the CHEQ equation of state code. We show that the detonation velocity decreases as the non-chemical degrees of freedom of the explosive are allowed to equilibrate. It is only when the chemical degrees of freedom are allowed to equilibrate that the detonation velocity increases.

  9. 49 CFR 1139.21 - Study carriers.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... and/or charges. (b) To corroborate the selection of the above study carriers, and to provide a data base for a continuing evaluation of the validity and usefulness of those carriers as a study group... A, Class I Participating Carriers' Revenue Data....

  10. A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

    NASA Astrophysics Data System (ADS)

    Halim, Mohammad Abdul; Islam, Muhammad Monirul; Luo, Xianjia; Sakurai, Takeaki; Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki; Tampo, Hitoshi; Shibata, Hajime; Niki, Shigeru; Akimoto, Katsuhiro

    2016-03-01

    A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

  11. Ti-doped indium tin oxide thin films for transparent field-effect transistors: control of charge-carrier density and crystalline structure.

    PubMed

    Kim, Ji-In; Ji, Kwang Hwan; Jang, Mi; Yang, Hoichang; Choi, Rino; Jeong, Jae Kyeong

    2011-07-01

    Indium tin oxide (ITO) films are representative transparent conducting oxide media for organic light-emitting diodes, liquid crystal displays, and solar cell applications. Extending the utility of ITO films from passive electrodes to active channel layers in transparent field-effect transistors (FETs), however, has been largely limited because of the materials' high carrier density (>1 × 10(20) cm(-3)), wide band gap, and polycrystalline structure. Here, we demonstrate that control over the cation composition in ITO-based oxide films via solid doping of titanium (Ti) can optimize the carrier concentration and suppress film crystallization. On 120 nm thick SiO(2)/Mo (200 nm)/glass substrates, transparent n-type FETs prepared with 4 at % Ti-doped ITO films and fabricated via the cosputtering of ITO and TiO(2) exhibited high electron mobilities of 13.4 cm(2) V(-1) s(-1), a low subthreshold gate swing of 0.25 V decade(-1), and a high I(on/)I(off) ratio of >1 × 10(8).

  12. Open problems in non-equilibrium physics

    SciTech Connect

    Kusnezov, D.

    1997-09-22

    The report contains viewgraphs on the following: approaches to non-equilibrium statistical mechanics; classical and quantum processes in chaotic environments; classical fields in non-equilibrium situations: real time dynamics at finite temperature; and phase transitions in non-equilibrium conditions.

  13. Chaotic dynamics, fluctuations, nonequilibrium ensembles.

    PubMed

    Gallavotti, Giovanni

    1998-06-01

    The ideas and the conceptual steps leading from the ergodic hypothesis for equilibrium statistical mechanics to the chaotic hypothesis for equilibrium and nonequilibrium statistical mechanics are illustrated. The fluctuation theorem linear law and universal slope prediction for reversible systems is briefly derived. Applications to fluids are briefly alluded to. (c) 1998 American Institute of Physics.

  14. Non-equilibrium supramolecular polymerization.

    PubMed

    Sorrenti, Alessandro; Leira-Iglesias, Jorge; Markvoort, Albert J; de Greef, Tom F A; Hermans, Thomas M

    2017-03-28

    Supramolecular polymerization has been traditionally focused on the thermodynamic equilibrium state, where one-dimensional assemblies reside at the global minimum of the Gibbs free energy. The pathway and rate to reach the equilibrium state are irrelevant, and the resulting assemblies remain unchanged over time. In the past decade, the focus has shifted to kinetically trapped (non-dissipative non-equilibrium) structures that heavily depend on the method of preparation (i.e., pathway complexity), and where the assembly rates are of key importance. Kinetic models have greatly improved our understanding of competing pathways, and shown how to steer supramolecular polymerization in the desired direction (i.e., pathway selection). The most recent innovation in the field relies on energy or mass input that is dissipated to keep the system away from the thermodynamic equilibrium (or from other non-dissipative states). This tutorial review aims to provide the reader with a set of tools to identify different types of self-assembled states that have been explored so far. In particular, we aim to clarify the often unclear use of the term "non-equilibrium self-assembly" by subdividing systems into dissipative, and non-dissipative non-equilibrium states. Examples are given for each of the states, with a focus on non-dissipative non-equilibrium states found in one-dimensional supramolecular polymerization.

  15. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics.

  16. Empirical in operando analysis of the charge carrier dynamics in hematite photoanodes by PEIS, IMPS and IMVS† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c6cp04683e Click here for additional data file.

    PubMed Central

    Ellis, David Shai; Dotan, Hen

    2016-01-01

    In this Perspective, we introduce intensity modulated photocurrent/voltage spectroscopy (IMPS and IMVS) as powerful tools for the analysis of charge carrier dynamics in photoelectrochemical (PEC) cells for solar water splitting, taking hematite (α-Fe2O3) photoanodes as a case study. We complete the picture by including photoelectrochemical impedance spectroscopy (PEIS) and linking the trio of PEIS, IMPS and IMVS, introduced here as photoelectrochemical immittance triplets (PIT), both mathematically and phenomenologically, demonstrating what conclusions can be extracted from these measurements. A novel way of analyzing the results by an empirical approach with minimal presumptions is introduced, using the distribution of relaxation times (DRT) function. The DRT approach is compared to conventional analysis approaches that are based on physical models and therefore come with model presumptions. This work uses a thin film hematite photoanode as a model system, but the approach can be applied to other PEC systems as well. PMID:27524381

  17. Growth and characterization of charge carrier spatially confined SrMnO3/La0.7Sr0.3MnO3/SrMnO3 trilayers

    NASA Astrophysics Data System (ADS)

    Galdi, A.; Sacco, C.; Orgiani, P.; Romeo, F.; Maritato, L.

    2017-02-01

    (SrMnO3)x/(La0.7Sr0.3MnO3)y/(SrMnO3)z (x,y,z=number of unit cells) trilayers have been grown using a Reflection High Energy Electron Diffraction calibrated layer-by-layer molecular beam epitaxy technique. X-Ray Reflectivity and X-Ray Diffraction measurements confirm the structural quality and the abruptness of the interfaces. Electrical transport property analysis as a function of temperature show effects related to the spatial confinement of the charge carriers induced by the layering. These results are important in view of future developments of oxide based heterostructures for innovative quantum devices.

  18. 49 CFR 377.209 - Additional charges.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... CHARGES Extension of Credit to Shippers by Motor Common Carriers, Water Common Carriers, and Household Goods Freight Forwarders § 377.209 Additional charges. When a carrier— (a) Has collected the amount of tariff charges represented in a freight bill presented by it as the total amount of such charges, and...

  19. Determination of parameters of a system of charge carriers in Y1-2 x Ca x Pr x Ba2Cu3O y within a combined analysis of temperature dependences of thermoelectric power and Nernst-Ettingshausen coefficients

    NASA Astrophysics Data System (ADS)

    Gasumyants, V. E.; Martynova, O. A.; Dubrovin, R. M.

    2015-12-01

    The temperature dependences of thermoelectric power S and transverse Nernst-Ettingshausen effect Q in high-temperature superconductors of the Y1-2 x Ca x Pr x Ba2Cu3O y system with different concentrations of dopants have been investigated experimentally. It has been shown that all the specific features revealed in the behavior of the two kinetic coefficients under investigation can be described using the narrowband model with a single concept of the structure of an energy spectrum and a common set of model parameters that characterize the structure of the spectrum and properties of a system of charge carriers. Based on the quantitative analysis of the dependences S( T) and Q( T), the values of these parameters for samples of the studied composition have been determined and the character of their changes with an increase in the impurity content has been analyzed. It has been demonstrated that, for the explanation of the obtained results, it is necessary to take into account the interaction of calcium and praseodymium ions upon their simultaneous introduction into the lattice. It has been found that the mobility of charge carriers has extremely low values and almost does not depend on the level of doping, which is associated with the character of changes in the structure of the energy spectrum of Y1-2 x Ca x Pr x Ba2Cu3O y upon doping. It has been concluded that the structure of the energy spectrum of high-temperature superconductors in the yttrium system is characterized by an asymmetry of the dispersion curve.

  20. Disentangling Multidimensional Nonequilibrium Dynamics of Adsorbates: CO Desorption from Cu(100)

    NASA Astrophysics Data System (ADS)

    Inoue, Ken-ichi; Watanabe, Kazuya; Sugimoto, Toshiki; Matsumoto, Yoshiyasu; Yasuike, Tomokazu

    2016-10-01

    Hot carriers at metal surfaces can drive nonthermal reactions of adsorbates. Characterizing nonequilibrium statistics among various degrees of freedom in an ultrafast time scale is crucial to understand and develop hot carrier-driven chemistry. Here we demonstrate multidimensional vibrational dynamics of carbon monoxide (CO) on Cu(100) along hot-carrier induced desorption studied by using time-resolved vibrational sum-frequency generation with phase-sensitive detection. Instantaneous frequency and amplitude of the CO internal stretching mode are tracked with a subpicosecond time resolution that is shorter than the vibrational dephasing time. These experimental results in combination with numerical analysis based on Langevin simulations enable us to extract nonequilibrium distributions of external vibrational modes of desorbing molecules. Superstatistical distributions are generated with mode-dependent frictional couplings in a few hundred femtoseconds after hot-electron excitation, and energy flow from hot electrons and intermode anharmonic coupling play crucial roles in the subsequent evolution of the non-Boltzman distributions.

  1. First-principles hybrid functional study of the electronic structure and charge carrier mobility in perovskite CH3NH3SnI3

    NASA Astrophysics Data System (ADS)

    Wu, Li-Juan; Zhao, Yu-Qing; Chen, Chang-Wen; Wang, Lin-Zhi; Liu, Biao; Cai, Meng-Qiu

    2016-10-01

    We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3 as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 104 cm2·V-1·s-1 along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3SnI3 can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics. Project supported by the National Natural Science Foundation of China (Grant No. 51172067), the Hunan Provincial Natural Science Fund for Distinguished Young Scholars, China (Grant No. 13JJ1013), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130161110036), and the New Century Excellent Talents in University, China (Grant No. NCET-12-0171.D).

  2. Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

    NASA Astrophysics Data System (ADS)

    Tadich, A.; Edmonds, M. T.; Ley, L.; Fromm, F.; Smets, Y.; Mazej, Z.; Riley, J.; Pakes, C. I.; Seyller, Th.; Wanke, M.

    2013-06-01

    We demonstrate that the intrinsic electron doping of monolayer epitaxial graphene on SiC(0001) can be tuned in a controlled fashion to holes via molecular doping with the fluorinated fullerene C60F48. In situ angle-resolved photoemission is used to measure an upward shift of (0.6 ± 0.05) eV in the Dirac point from -0.43 eV to +0.17 eV relative to the Fermi level. The carrier density is observed to change from n ˜ (1 × 1013 ± 0.1 × 1013) cm-2 to p ˜ (2 × 1012 ± 1 × 1012) cm-2. We introduce a doping model employing Fermi-Dirac statistics which explicitly takes temperature and the highly correlated nature of molecular orbitals into account. The model describes the observed doping behaviour in our experiment and readily explains why net p-type doping was not achieved in a previous study [Coletti et al., Phys. Rev. B 81, 8 (2010)] which used tetrafluorotetra-cyanoquinodimethane (F4-TCNQ).

  3. Elucidating the charge carrier separation and working mechanism of CH3NH3PbI(3-x)Cl(x) perovskite solar cells.

    PubMed

    Edri, Eran; Kirmayer, Saar; Mukhopadhyay, Sabyasachi; Gartsman, Konstantin; Hodes, Gary; Cahen, David

    2014-03-11

    Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p- and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

  4. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    SciTech Connect

    Mitoma, Nobuhiko E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Fujiwara, Akihiko

    2015-01-26

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

  5. Nonequilibrium mesoscopic transport: a genealogy.

    PubMed

    Das, Mukunda P; Green, Frederick

    2012-05-09

    Models of nonequilibrium quantum transport underpin all modern electronic devices, from the largest scales to the smallest. Past simplifications such as coarse graining and bulk self-averaging served well to understand electronic materials. Such particular notions become inapplicable at mesoscopic dimensions, edging towards the truly quantum regime. Nevertheless a unifying thread continues to run through transport physics, animating the design of small-scale electronic technology: microscopic conservation and nonequilibrium dissipation. These fundamentals are inherent in quantum transport and gain even greater and more explicit experimental meaning in the passage to atomic-sized devices. We review their genesis, their theoretical context, and their governing role in the electronic response of meso- and nanoscopic systems.

  6. Nonequilibrium quantum fluctuations of work.

    PubMed

    Allahverdyan, A E

    2014-09-01

    The concept of work is basic for statistical thermodynamics. To gain a fuller understanding of work and its (quantum) features, it needs to be represented as an average of a fluctuating quantity. Here I focus on the work done between two moments of time for a thermally isolated quantum system driven by a time-dependent Hamiltonian. I formulate two natural conditions needed for the fluctuating work to be physically meaningful for a system that starts its evolution from a nonequilibrium state. The existing definitions do not satisfy these conditions due to issues that are traced back to noncommutativity. I propose a definition of fluctuating work that is free of previous drawbacks and that applies for a wide class of nonequilibrium initial states. It allows the deduction of a generalized work-fluctuation theorem that applies for an arbitrary (out-of-equilibrium) initial state.

  7. Combined charge carrier transport and photoelectrochemical characterization of BiVO4 single crystals: intrinsic behavior of a complex metal oxide.

    PubMed

    Rettie, Alexander J E; Lee, Heung Chan; Marshall, Luke G; Lin, Jung-Fu; Capan, Cigdem; Lindemuth, Jeffrey; McCloy, John S; Zhou, Jianshi; Bard, Allen J; Mullins, C Buddie

    2013-07-31

    Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo, and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250 to 400 K, undergoing a transition to a variable-range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c axis, attributed to the layered structure of BiVO4. Measurements of the ac field Hall effect yielded an electron mobility of ~0.2 cm(2) V(-1) s(-1) for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~100 nm was estimated. As a result of low carrier mobility, attempts to measure the dc Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V versus the reversible H2 electrode, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to those of other metal oxides for PEC applications gives valuable insight into this material as a photoanode.

  8. Electron beam induced and microemulsion templated synthesis of CdSe quantum dots: tunable broadband emission and charge carrier recombination dynamics

    NASA Astrophysics Data System (ADS)

    Guleria, Apurav; Singh, Ajay K.; Rath, Madhab C.; Adhikari, Soumyakanti

    2015-04-01

    CdSe quantum dots (QDs) were synthesized by a rapid and one step templated approach inside the water pool of AOT (sodium bis(2-ethylhexyl) sulfosuccinate) based water-in-oil microemulsions (MEs) via electron beam (EB) irradiation technique with high dose rate, which favours high nucleation rate. The interplay of different experimental parameters such as precursor concentration, absorbed dose and {{W}0} values (aqueous phase to surfactant molar ratio) of MEs were found to have interesting consequences on the morphology, photoluminescence (PL), surface composition and carrier recombination dynamics of as-grown QDs. For instance, highly stable ultrasmall (∼1.7 nm) bluish-white light emitting QDs were obtained with quantum efficiency (η) of ∼9%. Furthermore, QDs were found to exhibit tunable broadband light emission extending from 450 to 750 nm (maximum FWHM ∼180 nm). This could be realized from the CIE (Commission Internationale d’Eclairage) chromaticity co-ordinates, which varied across the blue region to the orange region thereby, conferring their potential application in white light emitting diodes. Additionally, the average PL lifetime ≤ft( ≤ft< τ \\right> \\right) values could be varied from 18 ns to as high as 74 ns, which reflect the role of surface states in terms of their density and distribution. Another interesting revelation was the self-assembling of the initially formed QDs into nanorods with high aspect ratios ranging from 7 to 20, in correspondence with the {{W}0} values. Besides, the fundamental roles of the chemical nature of water pool and the interfacial fluidity of AOT MEs in influencing the photophysical properties of QDs were investigated by carrying out a similar study in CTAB (cetyltrimethylammonium bromide; cationic surfactant) based MEs. Surprisingly, very profound and contrasting results were observed wherein ≤ft< τ \\right> and η of the QDs in case of CTAB MEs were found to be at least three times lower as compared to

  9. 14 CFR 389.24 - Foreign air carriers.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false Foreign air carriers. 389.24 Section 389.24...) ORGANIZATION FEES AND CHARGES FOR SPECIAL SERVICES Filing and Processing License Fees § 389.24 Foreign air carriers. A foreign air carrier, or such carriers, if from the same country, acting jointly, may apply...

  10. Disparities in voltage-sensor charge and electromotility imply slow chloride-driven state transitions in the solute carrier SLC26a5

    PubMed Central

    Song, Lei; Santos-Sacchi, Joseph

    2013-01-01

    Outer hair cells (OHCs) drive cochlear amplification that enhances our ability to detect and discriminate sounds. The motor protein, prestin, which evolved from the SLC26 anion transporter family, underlies the OHC’s voltage-dependent mechanical activity (eM). Here we report on simultaneous measures of prestin’s voltage-sensor charge movement (nonlinear capacitance, NLC) and eM that evidence disparities in their voltage dependence and magnitude as a function of intracellular chloride, challenging decades’ old dogma that NLC reports on eM steady-state behavior. A very simple kinetic model, possessing fast anion-binding transitions and fast voltage-dependent transitions, coupled together by a much slower transition recapitulates these disparities and other biophysical observations on the OHC. The intermediary slow transition probably relates to the transporter legacy of prestin, and this intermediary gateway, which shuttles anion-bound molecules into the voltage-enabled pool of motors, provides molecular delays that present as phase lags between membrane voltage and eM. Such phase lags may help to effectively inject energy at the appropriate moment to enhance basilar membrane motion. PMID:23431177

  11. A deconvoluted PL approach to probe the charge carrier dynamics of the grain interior and grain boundary of a perovskite film for perovskite solar cell applications.

    PubMed

    Mamun, Abdullah Al; Ava, Tanzila Tasnim; Jeong, Hyeon Jun; Jeong, Mun Seok; Namkoong, Gon

    2017-03-29

    We explore a new characterization approach capable of probing the grain interior (GI) and grain boundary (GB) of a CH3NH3PbI3-xClx perovskite thin film. In particular, we have found that the photoluminescence (PL) spectrum observed for a CH3NH3PbI3-xClx perovskite thin film is asymmetric, and can be deconvoluted using a bi-Gaussian function, representing the ordered and disordered phases of the perovskite film. In order to understand the origin of the ordered and disordered phases of the perovskite film, two-dimensional (2D) PL mapping was performed to resolve the PL spectra at the nanoscale level. Quantitative analysis of the local PL spectra revealed that the ordered phase originated from the GIs while the disordered phase mainly came from the GBs. In particular, power-dependent PL measurements of the deconvoluted PL spectra revealed that smaller grained perovskites showed defect-mediated recombination at GBs but exciton-like transitions at GIs. In contrast, perovskite films with large grains followed an excellent power law, showing exciton-like recombination at both GIs and GBs. As expected, perovskite solar cells fabricated with large grains showed an increased efficiency with higher light absorption and higher charge extraction efficiency.

  12. Nonequilibrium chemistry boundary layer integral matrix procedure

    NASA Technical Reports Server (NTRS)

    Tong, H.; Buckingham, A. C.; Morse, H. L.

    1973-01-01

    The development of an analytic procedure for the calculation of nonequilibrium boundary layer flows over surfaces of arbitrary catalycities is described. An existing equilibrium boundary layer integral matrix code was extended to include nonequilibrium chemistry while retaining all of the general boundary condition features built into the original code. For particular application to the pitch-plane of shuttle type vehicles, an approximate procedure was developed to estimate the nonequilibrium and nonisentropic state at the edge of the boundary layer.

  13. Nonequilibrium volumetric response of shocked polymers

    SciTech Connect

    Clements, B E

    2009-01-01

    Polymers are well known for their non-equilibrium deviatoric behavior. However, investigations involving both high rate shock experiments and equilibrium measured thermodynamic quantities remind us that the volumetric behavior also exhibits a non-equilibrium response. Experiments supporting the notion of a non-equilibrium volumetric behavior will be summarized. Following that discussion, a continuum-level theory is proposed that will account for both the equilibrium and non-equilibrium response. Upon finding agreement with experiment, the theory is used to study the relaxation of a shocked polymer back towards its shocked equilibrium state.

  14. Nonequilibrium conductivity at quantum critical points

    NASA Astrophysics Data System (ADS)

    Berridge, A. M.; Green, A. G.

    2013-12-01

    Quantum criticality provides an important route to revealing universal nonequilibrium behavior. A canonical example of a critical point is the Bose-Hubbard model, which we study under the application of an electric field. A Boltzmann transport formalism and ɛ expansion are used to obtain the nonequilibrium conductivity and current noise. This approach allows us to explicitly identify how a universal nonequilibrium steady state is maintained, by identifying the rate-limiting step in balancing Joule heating and dissipation to a heat bath. It also reveals that the nonequilibrium distribution function is very far from a thermal distribution.

  15. Dissipative dynamics of a quantum two-state system in presence of nonequilibrium quantum noise

    NASA Astrophysics Data System (ADS)

    Mann, Niklas; Brüggemann, Jochen; Thorwart, Michael

    2016-12-01

    We analyze the real-time dynamics of a quantum two-state system in the presence of nonequilibrium quantum fluctuations. The latter are generated by a coupling of the two-state system to a single electronic level of a quantum dot which carries a nonequilibrium tunneling current. We restrict to the sequential tunneling regime and calculate the dynamics of the two-state system, of the dot population, and of the nonequilibrium charge current on the basis of a diagrammatic perturbative method valid for a weak tunneling coupling. We find a nontrivial dependence of the relaxation and dephasing rates of the two-state system due to the nonequilibrium fluctuations which is directly linked to the structure of the unperturbed central system. In addition, a Heisenberg-Langevin-equation of motion allows us to calculate the correlation function of the nonequilibrium fluctuations. By this, we obtain a generalized nonequilibrium fluctuation relation which includes the equilibrium fluctuation-dissipation theorem in the limit of zero transport voltage. A straightforward extension to the case with a time-periodic ac voltage is shown.

  16. An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

    NASA Astrophysics Data System (ADS)

    Gul, R.; Roy, U. N.; James, R. B.

    2017-03-01

    In this research, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτe) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trapping and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (VCd-) were identified as a dominant trap. The VCd- were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at Ev + 0.36 eV and Ev + 1.1 eV, Ec + 76 meV and Ev + 0.61 eV, Ev + 36 meV and Ev + 0.86 eV, Ev + 0.52 eV and Ec + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (Nt), and capture cross-section (σ) and hence trapping (tt) and de-trapping (tdt) times. The dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.

  17. Nozzle flow with vibrational nonequilibrium

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Landry, J. G.

    1995-01-01

    This research concerns the modeling and numerical solutions of the coupled system of compressible Navier-Stokes equations in cylindrical coordinates under conditions of equilibrium and nonequilibrium thermodynamics. The problem considered was the modeling of a high temperature diatomic gas N2 flowing through a converging-diverging high expansion nozzle. The problem was modeled in two ways. The first model uses a single temperature with variable specific heats as functions of this temperature. For the second model we assume that the various degrees of freedom all have a Boltzmann distribution and that there is a continuous redistribution of energy among the various degrees of freedom as the gas passes through the nozzle. Each degree of freedom is assumed to have its own temperature and, consequently, each system state can be characterized by these temperatures. This suggests that formulation of a second model with a vibrational degree of freedom along with a rotational-translation degree of freedom, each degree of freedom having its own temperature. Initially the vibrational degree of freedom is excited by heating the gas to a high temperature. As the high temperature gas passes through the nozzle throat there is a sudden drop in temperature along with a relaxation time for the vibrational degree of freedom to achieve equilibrium with the rotational-translation degree of freedom. That is, we assume that the temperature change upon passing through the throat is so great that the changes in the vibrational degree of freedom occur at a much slower pace and consequently lags behind the rotational-translational energy changes. This lag results in a finite relaxation time. In this context the term nonequilibrium is used to denote the fact that the energy content of the various degrees of freedom are characterized by two temperatures. We neglect any chemical reactions which could also add nonequilibrium effects. We develop the energy equations for the nonequilibrium model

  18. BURNOUT RESISTANT X-BAND HOT CARRIER DETECTORS.

    DTIC Science & Technology

    DETECTORS, *FAILURE(ELECTRONICS), SEMICONDUCTOR DIODES, X BAND, VOLTAGE, SILICON, DIOXIDES, SEEBECK EFFECT , CHARGE CARRIERS, PALLADIUM ALLOYS, ELECTRICAL RESISTANCE, GALLIUM ALLOYS, ARSENIDES, DIELECTRICS, RECTIFIERS, VIDEO AMPLIFIERS.

  19. Small fields: Nonequilibrium radiation dosimetry

    SciTech Connect

    Das, Indra J.; Ding, George X.; Ahnesjoe, Anders

    2008-01-15

    Advances in radiation treatment with beamlet-based intensity modulation, image-guided radiation therapy, and stereotactic radiosurgery (including specialized equipments like CyberKnife, Gamma Knife, tomotherapy, and high-resolution multileaf collimating systems) have resulted in the use of reduced treatment fields to a subcentimeter scale. Compared to the traditional radiotherapy with fields {>=}4x4 cm{sup 2}, this can result in significant uncertainty in the accuracy of clinical dosimetry. The dosimetry of small fields is challenging due to nonequilibrium conditions created as a consequence of the secondary electron track lengths and the source size projected through the collimating system that are comparable to the treatment field size. It is further complicated by the prolonged electron tracks in the presence of low-density inhomogeneities. Also, radiation detectors introduced into such fields usually perturb the level of disequilibrium. Hence, the dosimetric accuracy previously achieved for standard radiotherapy applications is at risk for both absolute and relative dose determination. This article summarizes the present knowledge and gives an insight into the future procedures to handle the nonequilibrium radiation dosimetry problems. It is anticipated that new miniature detectors with controlled perturbations and corrections will be available to meet the demand for accurate measurements. It is also expected that the Monte Carlo techniques will increasingly be used in assessing the accuracy, verification, and calculation of dose, and will aid perturbation calculations of detectors used in small and highly conformal radiation beams.

  20. A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

    NASA Astrophysics Data System (ADS)

    Sun, Chang; Rougieux, Fiacre E.; Macdonald, Daniel

    2015-01-01

    There are a number of existing models for estimating the charge states of defects in silicon. In order of increasing complexity, these are (a) the Fermi-Dirac distribution, (b) the Shockley-Last model, (c) the Shockley-Read-Hall model, and (d) the Sah-Shockley model. In this work, we demonstrate their consistency with the general occupancy ratio α, and show that this parameter can be universally applied to predict the charge states of both monovalent and multivalent deep levels, under either thermal equilibrium or steady-state conditions with carrier injection. The capture cross section ratio is shown to play an important role in determining the charge state under non-equilibrium conditions. The application of the general occupancy ratio is compared with the quasi-Fermi levels, which are sometimes used to predict the charge states in the literature, and the conditions where the latter can be a good approximation are identified. The general approach is then applied to the prediction of the temperature- and injection level-dependent charge states for the technologically important case of multivalent monatomic hydrogen, and several other key monovalent deep levels including Fe, Cr, and the boron-oxygen complex in silicon solar cells. For the case of hydrogen, we adapt the model of Herring et al., which describes the charge states of hydrogen in thermal equilibrium, and generalize it for non-equilibrium conditions via the inclusion of the general occupancy ratio, while retaining the pre-factors which make the model more complete. Based on these results, the impact of temperature and injection on the hydrogenation of the key monovalent defects, and other pairing reactions, are discussed, demonstrating that the presented model provides a rigorous methodology for understanding the impact of charge states.

  1. Nonequilibrium solvent effects in Born-Oppenheimer molecular dynamics for ground and excited electronic states.

    PubMed

    Bjorgaard, J A; Velizhanin, K A; Tretiak, S

    2016-04-21

    The effects of solvent on molecular processes such as excited state relaxation and photochemical reaction often occurs in a nonequilibrium regime. Dynamic processes such as these can be simulated using excited statemolecular dynamics. In this work, we describe methods of simulating nonequilibrium solvent effects in excited statemolecular dynamics using linear-response time-dependent density functional theory and apparent surface charge methods. These developments include a propagation method for solvent degrees of freedom and analytical energy gradients for the calculation of forces. Molecular dynamics of acetaldehyde in water or acetonitrile are demonstrated where the solute-solvent system is out of equilibrium due to photoexcitation and emission.

  2. Nonequilibrium solvent effects in Born-Oppenheimer molecular dynamics for ground and excited electronic states

    NASA Astrophysics Data System (ADS)

    Bjorgaard, J. A.; Velizhanin, K. A.; Tretiak, S.

    2016-04-01

    The effects of solvent on molecular processes such as excited state relaxation and photochemical reaction often occurs in a nonequilibrium regime. Dynamic processes such as these can be simulated using excited state molecular dynamics. In this work, we describe methods of simulating nonequilibrium solvent effects in excited state molecular dynamics using linear-response time-dependent density functional theory and apparent surface charge methods. These developments include a propagation method for solvent degrees of freedom and analytical energy gradients for the calculation of forces. Molecular dynamics of acetaldehyde in water or acetonitrile are demonstrated where the solute-solvent system is out of equilibrium due to photoexcitation and emission.

  3. Nonequilibrium solvent effects in Born-Oppenheimer molecular dynamics for ground and excited electronic states

    SciTech Connect

    Bjorgaard, Josiah August; Velizhanin, Kirill A.; Tretiak, Sergei

    2016-04-15

    The effects of solvent on molecular processes such as excited state relaxation and photochemical reaction often occurs in a nonequilibrium regime. Dynamic processes such as these can be simulated using excited state molecular dynamics. In this paper, we describe methods of simulating nonequilibrium solvent effects in excited state molecular dynamics using linear-response time-dependent density functional theory and apparent surface charge methods. These developments include a propagation method for solvent degrees of freedom and analytical energy gradients for the calculation of forces. Finally, molecular dynamics of acetaldehyde in water or acetonitrile are demonstrated where the solute-solvent system is out of equilibrium due to photoexcitation and emission.

  4. INTRODUCTION: Nonequilibrium Processes in Plasmas

    NASA Astrophysics Data System (ADS)

    Petrović, Zoran; Marić, Dragana; Malović, Gordana

    2009-07-01

    This book aims to give a cross section from a wide range of phenomena that, to different degrees, fall under the heading of non-equilibrium phenomenology. The selection is, of course, biased by the interests of the members of the scientific committee and of the FP6 Project 026328 IPB-CNP Reinforcing Experimental Centre for Non-equilibrium Studies with Application in Nano-technologies, Etching of Integrated Circuits and Environmental Research. Some of the papers included here are texts based on selected lectures presented at the Second International Workshop on Non-equilibrium Processes in Plasmas and Environmental Science. However, this volume is not just the proceedings of that conference as it contains a number of papers from authors that did not attend the conference. The goal was to put together a volume that would cover the interests of the project and support further work. It is published in the Institute of Physics journal Journal of Physics: Conference Series to ensure a wide accessibility of the articles. The texts presented here range from in-depth reviews of the current status and past achievements to progress reports of currently developed experimental devices and recently obtained still unpublished results. All papers have been refereed twice, first when speakers were selected based on their reputation and recently published results, and second after the paper was submitted both by the editorial board and individual assigned referees according to the standards of the conference and of the journal. Nevertheless, we still leave the responsibility (and honours) for the contents of the papers to the authors. The papers in this book are review articles that give a summary of the already published work or present the work in progress that will be published in full at a later date (or both). In the introduction to the first volume, in order to show how far reaching, ubiquitous and important non-equilibrium phenomena are, we claimed that ever since the early

  5. Local non-equilibrium thermodynamics

    PubMed Central

    Jinwoo, Lee; Tanaka, Hajime

    2015-01-01

    Local Shannon entropy lies at the heart of modern thermodynamics, with much discussion of trajectory-dependent entropy production. When taken at both boundaries of a process in phase space, it reproduces the second law of thermodynamics over a finite time interval for small scale systems. However, given that entropy is an ensemble property, it has never been clear how one can assign such a quantity locally. Given such a fundamental omission in our knowledge, we construct a new ensemble composed of trajectories reaching an individual microstate, and show that locally defined entropy, information, and free energy are properties of the ensemble, or trajectory-independent true thermodynamic potentials. We find that the Boltzmann-Gibbs distribution and Landauer's principle can be generalized naturally as properties of the ensemble, and that trajectory-free state functions of the ensemble govern the exact mechanism of non-equilibrium relaxation. PMID:25592077

  6. Nonequilibrium radiative hypersonic flow simulation

    NASA Astrophysics Data System (ADS)

    Shang, J. S.; Surzhikov, S. T.

    2012-08-01

    Nearly all the required scientific disciplines for computational hypersonic flow simulation have been developed on the framework of gas kinetic theory. However when high-temperature physical phenomena occur beneath the molecular and atomic scales, the knowledge of quantum physics and quantum chemical-physics becomes essential. Therefore the most challenging topics in computational simulation probably can be identified as the chemical-physical models for a high-temperature gaseous medium. The thermal radiation is also associated with quantum transitions of molecular and electronic states. The radiative energy exchange is characterized by the mechanisms of emission, absorption, and scattering. In developing a simulation capability for nonequilibrium radiation, an efficient numerical procedure is equally important both for solving the radiative transfer equation and for generating the required optical data via the ab-initio approach. In computational simulation, the initial values and boundary conditions are paramount for physical fidelity. Precise information at the material interface of ablating environment requires more than just a balance of the fluxes across the interface but must also consider the boundary deformation. The foundation of this theoretic development shall be built on the eigenvalue structure of the governing equations which can be described by Reynolds' transport theorem. Recent innovations for possible aerospace vehicle performance enhancement via an electromagnetic effect appear to be very attractive. The effectiveness of this mechanism is dependent strongly on the degree of ionization of the flow medium, the consecutive interactions of fluid dynamics and electrodynamics, as well as an externally applied magnetic field. Some verified research results in this area will be highlighted. An assessment of all these most recent advancements in nonequilibrium modeling of chemical kinetics, chemical-physics kinetics, ablation, radiative exchange

  7. Nonequilibrium interfaces in colloidal fluids

    NASA Astrophysics Data System (ADS)

    Bier, Markus; Arnold, Daniel

    2013-12-01

    The time-dependent structure, interfacial tension, and evaporation of an oversaturated colloid-rich (liquid) phase in contact with an undersaturated colloid-poor (vapor) phase of a colloidal dispersion is investigated theoretically during the early-stage relaxation, where the interface is relaxing towards a local equilibrium state while the bulk phases are still out of equilibrium. Since systems of this type exhibit a clear separation of colloidal and solvent relaxation time scales with typical times of interfacial tension measurements in between, they can be expected to be suitable for analogous experimental studies, too. The major finding is that, irrespective of how much the bulk phases differ from two-phase coexistence, the interfacial structure and the interfacial tension approach those at two-phase coexistence during the early-stage relaxation process. This is a surprising observation since it implies that the relaxation towards global equilibrium of the interface is not following but preceding that of the bulk phases. Scaling forms for the local chemical potential, the flux, and the dissipation rate exhibit qualitatively different leading order contributions depending on whether an equilibrium or a nonequilibrium system is considered. The degree of nonquilibrium between the bulk phases is found to not influence the qualitative relaxation behavior (i.e., the values of power-law exponents), but to determine the quantitative deviation of the observed quantities from their values at two-phase coexistence. Whereas the underlying dynamics differs between colloidal and molecular fluids, the behavior of quantities such as the interfacial tension approaching the equilibrium values during the early-stage relaxation process, during which nonequilibrium conditions of the bulk phases are not changed, can be expected to occur for both types of systems.

  8. On Nonequilibrium Radiation in Hydrogen Shock Layers

    NASA Technical Reports Server (NTRS)

    Park, Chul

    2005-01-01

    The influence of thermochemical nonequilibrium in the shock layer over a vehicle entering the atmosphere of an outer planet is examined qualitatively. The state of understanding of the heating environment for the Galileo Probe vehicle is first reviewed. Next, the possible reasons for the high recession in the frustum region and the low recession in the stagnation region are examined. The state of understanding of the nonequilibrium in the hydrogen flow is then examined. For the entry flight in Neptune, the possible influence of nonequilibrium is predicted.

  9. Non-Equilibrium Ionization Modeling of Coronal Mass Ejections

    NASA Astrophysics Data System (ADS)

    Rimple, Remington; Murphy, Nicholas Arnold; Shen, Chengcai

    2017-01-01

    Coronal Mass Ejections, or CMEs, are solar events that eject plasma and magnetic flux into interplanetary space. Contemporary sources have noted that the onset of CMEs are caused by some instability of the coronal magnetic field, and further allows heating of plasma upon expansion. Additionally, plasma that leaves the lower solar corona does not remain in ionization equilibrium due to the rapid expansion of plasma. We investigate the evolution of charge states of CME plasma using non-equilibrium ionization (NEI) modeling. These NEI models include radiative cooling and serve as baseline studies for special cases where no heat is being added to the plasma. Each of the simulated CMEs have initial conditions characteristic of active regions. Various function inputs, such as initial temperature, density and final velocity, allow us to examine the influence of certain parameters on the charge state evolution. The results of our project show that plasma originating from active regions display charge state evolutions substantially dependent on initial density and temperature. The CMEs starting with higher plasma density often show an abundance of lower charge states above the freeze-in height. Simulations starting from higher temperatures often show abundance peaks at charge states with closed electron shells.

  10. Hydrogen carriers

    NASA Astrophysics Data System (ADS)

    He, Teng; Pachfule, Pradip; Wu, Hui; Xu, Qiang; Chen, Ping

    2016-12-01

    Hydrogen has the potential to be a major energy vector in a renewable and sustainable future energy mix. The efficient production, storage and delivery of hydrogen are key technical issues that require improvement before its potential can be realized. In this Review, we focus on recent advances in materials development for on-board hydrogen storage. We highlight the strategic design and optimization of hydrides of light-weight elements (for example, boron, nitrogen and carbon) and physisorbents (for example, metal-organic and covalent organic frameworks). Furthermore, hydrogen carriers (for example, NH3, CH3OH-H2O and cycloalkanes) for large-scale distribution and for on-site hydrogen generation are discussed with an emphasis on dehydrogenation catalysts.

  11. Hot carrier relaxation dynamics in zinc selenide

    NASA Astrophysics Data System (ADS)

    Mehendale, Manjusha

    The ultrafast relaxation dynamics of hot carriers are monitored in a high-quality ZnSe epilayer grown on GaAs substrate by employing a novel femtosecond pump-probe differential reflectivity technique which exploits the intrinsic interferometric asymmetric Fabry-Perot sample structure. The ultrashort femtosecond pulses used in these timeresolved pump-probe experiments are derived from a hard-apertured Kerr-lens modelocked Ti:sapphire laser. The effect of pump-laser-induced thermal lensing on the stability and operational characteristics of such solid-state Femtosecond lasers is discussed. A theoretical model, which assumes the exponential cooling of electrons and holes towards the band edge and a simple two parabolic band structure, is used to estimate the hot carrier cooling times for various photoexcited carrier densities. This model shows the results to be consistent with the expected characteristic electronic LO-phonon emission time of 35-40 fs and provide evidence for the influence of a non-equilibrium LO-phonon population, known as ``hot phonon effect'', on the electron cooling dynamics for carrier densities higher than 3 × 1017 cm-3. Another model, which is based on a balance equation approach, is used to analyze the experimental data more accurately, by including the effects of various processes such as screened carrier-phonon, carrier-carrier scattering and hot phonon effects on the relaxation dynamics. Comparison of the experimental data with this latter theoretical model indicates that the observed reduction in the electron cooling rate with increasing carrier density is due to both screening of the Fröhlich interaction and hot phonon effect. Finally, a comparison of hot carrier relaxation processes at various lattice temperatures is presented. This study provides an evidence of a more pronounced hot phonon effect at a lattice temperature of 80K than at 300K, which is complicated by temperature-dependent changes in optical and physical properties of the

  12. Renormalisation of Nonequilibrium Phonons Under Strong Perturbative Influences.

    NASA Astrophysics Data System (ADS)

    Mehta, Sushrut Madhukar

    Effects of strong perturbative influences, namely the presence of a narrow distribution of acoustic phonons, and the presence of an electron plasma, on the dynamics of nonequilibrium, near zone center, longitudinal optical phonons in GaP have been investigated in two separate experiments. The study of the effects of the interaction between the LO phonons and a heavily populated, narrow distribution of acoustic phonons lead to the observation of a new optically driven nonequilibrium phonon state. Time Resolved Coherent Antistokes Raman Scattering (TR-CARS), with picosecond resolution, was used to investigate the new mode. In order to achieve high occupation numbers in the acoustic branch, the picosecond laser pulses used were amplified up to 1.0 GW/cm^2 peak power per laser beam. An important characteristic property of the new state which differentiates it from the well known LO phonon state is the fact that rather than having the single decay rate observed under thermal equilibrium, the new state has two decay rates. Moreover, these two decay rates depend strongly on the distribution of the acoustic phonon occupation number. The coupling of the LO phonons with an electron plasma, on the other hand, was investigated by measurements of the shape of the Raman scattered line associated with the phonon-plasmon coupled mode. The plasma was generated by thermal excitation of carriers in doped samples. It was possible to study a large variety of plasma excitations by controlling the concentration of the dopant and the ambient temperature. A complete, self consistant model based on standard dielectric response theory is presented, and applied to the measurements of the phonon-plasmon coupled mode. It is possible to recover, via this model, the effective coupled mode damping rate, the plasma damping rate, and the plasma frequency as functions of ambient temperature, or the carrier concentration.

  13. Nonequilibrium molecular dynamics: The first 25 years

    SciTech Connect

    Hoover, W.G. |

    1992-08-01

    Equilibrium Molecular Dynamics has been generalized to simulate Nonequilibrium systems by adding sources of thermodynamic heat and work. This generalization incorporates microscopic mechanical definitions of macroscopic thermodynamic and hydrodynamic variables, such as temperature and stress, and augments atomistic forces with special boundary, constraint, and driving forces capable of doing work on, and exchanging heat with, an otherwise Newtonian system. The underlying Lyapunov instability of these nonequilibrium equations of motion links microscopic time-reversible deterministic trajectories to macroscopic time-irreversible hydrodynamic behavior as described by the Second Law of Thermodynamics. Green-Kubo linear-response theory has been checked. Nonlinear plastic deformation, intense heat conduction, shockwave propagation, and nonequilibrium phase transformation have all been simulated. The nonequilibrium techniques, coupled with qualitative improvements in parallel computer hardware, are enabling simulations to approximate real-world microscale and nanoscale experiments.

  14. Network inference in the nonequilibrium steady state

    NASA Astrophysics Data System (ADS)

    Dettmer, Simon L.; Nguyen, H. Chau; Berg, Johannes

    2016-11-01

    Nonequilibrium systems lack an explicit characterization of their steady state like the Boltzmann distribution for equilibrium systems. This has drastic consequences for the inference of the parameters of a model when its dynamics lacks detailed balance. Such nonequilibrium systems occur naturally in applications like neural networks and gene regulatory networks. Here, we focus on the paradigmatic asymmetric Ising model and show that we can learn its parameters from independent samples of the nonequilibrium steady state. We present both an exact inference algorithm and a computationally more efficient, approximate algorithm for weak interactions based on a systematic expansion around mean-field theory. Obtaining expressions for magnetizations and two- and three-point spin correlations, we establish that these observables are sufficient to infer the model parameters. Further, we discuss the symmetries characterizing the different orders of the expansion around the mean field and show how different types of dynamics can be distinguished on the basis of samples from the nonequilibrium steady state.

  15. Nonequilibrium Casimir-Polder plasmonic interactions

    SciTech Connect

    Bartolo, Nicola; Messina, Riccardo; Dalvit, Diego Alejandro Roberto; Intravaia, Francesco

    2016-04-18

    Here we investigate how the combination of nonequilibrium effects and material properties impacts on the Casimir-Polder interaction between an atom and a surface. By addressing systems with temperature inhomogeneities and laser interactions, we show that nonmonotonous energetic landscapes can be produced where barriers and minima appear. Lastly, our treatment provides a self-consistent quantum theoretical framework for investigating the properties of a class of nonequilibrium atom-surface interactions.

  16. Quantum thermodynamics: a nonequilibrium Green's function approach.

    PubMed

    Esposito, Massimiliano; Ochoa, Maicol A; Galperin, Michael

    2015-02-27

    We establish the foundations of a nonequilibrium theory of quantum thermodynamics for noninteracting open quantum systems strongly coupled to their reservoirs within the framework of the nonequilibrium Green's functions. The energy of the system and its coupling to the reservoirs are controlled by a slow external time-dependent force treated to first order beyond the quasistatic limit. We derive the four basic laws of thermodynamics and characterize reversible transformations. Stochastic thermodynamics is recovered in the weak coupling limit.

  17. Aerospace Applications of Non-Equilibrium Plasma

    NASA Technical Reports Server (NTRS)

    Blankson, Isaiah M.

    2016-01-01

    Nonequilibrium plasma/non-thermal plasma/cold plasmas are being used in a wide range of new applications in aeronautics, active flow control, heat transfer reduction, plasma-assisted ignition and combustion, noise suppression, and power generation. Industrial applications may be found in pollution control, materials surface treatment, and water purification. In order for these plasma processes to become practical, efficient means of ionization are necessary. A primary challenge for these applications is to create a desired non-equilibrium plasma in air by preventing the discharge from transitioning into an arc. Of particular interest is the impact on simulations and experimental data with and without detailed consideration of non-equilibrium effects, and the consequences of neglecting non-equilibrium. This presentation will provide an assessment of the presence and influence of non-equilibrium phenomena for various aerospace needs and applications. Specific examples to be considered will include the forward energy deposition of laser-induced non-equilibrium plasmoids for sonic boom mitigation, weakly ionized flows obtained from pulsed nanosecond discharges for an annular Hall type MHD generator duct for turbojet energy bypass, and fundamental mechanisms affecting the design and operation of novel plasma-assisted reactive systems in dielectric liquids (water purification, in-pipe modification of fuels, etc.).

  18. Experimental and Ab Initio Ultrafast Carrier Dynamics in Plasmonic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Brown, Ana M.; Sundararaman, Ravishankar; Narang, Prineha; Schwartzberg, Adam M.; Goddard, William A.; Atwater, Harry A.

    2017-02-01

    Ultrafast pump-probe measurements of plasmonic nanostructures probe the nonequilibrium behavior of excited carriers, which involves several competing effects obscured in typical empirical analyses. Here we present pump-probe measurements of plasmonic nanoparticles along with a complete theoretical description based on first-principles calculations of carrier dynamics and optical response, free of any fitting parameters. We account for detailed electronic-structure effects in the density of states, excited carrier distributions, electron-phonon coupling, and dielectric functions that allow us to avoid effective electron temperature approximations. Using this calculation method, we obtain excellent quantitative agreement with spectral and temporal features in transient-absorption measurements. In both our experiments and calculations, we identify the two major contributions of the initial response with distinct signatures: short-lived highly nonthermal excited carriers and longer-lived thermalizing carriers.

  19. Nonequilibrium transport in superconducting tunneling structures.

    SciTech Connect

    Chtchelkatchev, N. M.; Vinokur, V. M.; Baturina, T. I.

    2010-12-01

    We derive the current-voltage (I-V) characteristics of far from equilibrium superconducting tunneling arrays and find that the energy relaxation ensuring the charge transfer occurs in two stages: (i) the energy exchange between charge carriers and the intermediate bosonic agent, environment, and (ii) relaxing the energy further to the (phonon) thermostat, the bath, provided the rate of the environmental modes-phonon interactions is slower than their energy exchange rate with the tunneling junction. For a single junction we find I {proportional_to} (V/R)ln({Lambda}/V), where R is the bare tunnel resistance of the junction and {Lambda} is the high energy cut-off of the electron-environment interaction. In large tunneling arrays comprised of macroscopic number of junctions, low-temperature transport is governed by the cotunneling processes losing energy to the electron-hole environment. Below some critical temperature, T*, the Coulomb interactions open a finite gap in the environment excitations spectrum blocking simultaneously Cooper pair and normal excitations currents through the array; this is the microscopic mechanism of the insulator-to-superinsulator transition.

  20. First principles nonequilibrium plasma mixing

    NASA Astrophysics Data System (ADS)

    Ticknor, C.; Herring, S. D.; Lambert, F.; Collins, L. A.; Kress, J. D.

    2014-01-01

    We have performed nonequilibrium classical and quantum-mechanical molecular dynamics simulations that follow the interpenetration of deuterium-tritium (DT) and carbon (C) components through an interface initially in hydrostatic and thermal equilibrium. We concentrate on the warm, dense matter regime with initial densities of 2.5-5.5 g/cm3 and temperatures from 10 to 100 eV. The classical treatment employs a Yukawa pair-potential with the parameters adjusted to the plasma conditions, and the quantum treatment rests on an orbital-free density functional theory at the Thomas-Fermi-Dirac level. For times greater than about a picosecond, the component concentrations evolve in accordance with Fick's law for a classically diffusing fluid with the motion, though, described by the mutual diffusion coefficient of the mixed system rather than the self-diffusion of the individual components. For shorter times, microscopic processes control the clearly non-Fickian dynamics and require a detailed representation of the electron probability density in space and time.

  1. Recovery of SINIS turnstile accuracy in a strongly nonequilibrium regime

    NASA Astrophysics Data System (ADS)

    Khaymovich, I. M.; Basko, D. M.

    2016-10-01

    We perform a theoretical study of nonequilibrium effects in charge transport through a hybrid single-electron transistor based on a small normal metal (N) island with the gate-controlled number of electrons, tunnel-coupled to voltage-biased superconducting (S) electrodes (SINIS). Focusing on the turnstile mode of the transistor operation with the gate voltage driven periodically, and electrons on the island being out of equilibrium, we find that the current quantization accuracy is a nonmonotonic function of the relaxation rate ΓF of the distribution function F (ɛ ) on the island due to tunneling, as compared to the drive frequency f , electron-electron 1 /τe e , and electron-phonon 1 /τe p h relaxation rates. Surprisingly, in the strongly nonequilibrium regime, f ≫ΓF≫τee -1,τep h -1 , the turnstile current plateau is recovered, similarly to the ideal equilibrium regime, τep h -1≫ΓF . The plateau is destroyed in the quasiequilibrium regime when the electron-electron relaxation is faster than tunneling.

  2. Charge Transport Properties in Disordered Organic Semiconductor as a Function of Charge Density: Monte Carlo Simulation

    NASA Astrophysics Data System (ADS)

    Shukri, Seyfan Kelil

    2017-01-01

    We have done Kinetic Monte Carlo (KMC) simulations to investigate the effect of charge carrier density on the electrical conductivity and carrier mobility in disordered organic semiconductors using a lattice model. The density of state (DOS) of the system are considered to be Gaussian and exponential. Our simulations reveal that the mobility of the charge carrier increases with charge carrier density for both DOSs. In contrast, the mobility of charge carriers decreases as the disorder increases. In addition the shape of the DOS has a significance effect on the charge transport properties as a function of density which are clearly seen. On the other hand, for the same distribution width and at low carrier density, the change occurred on the conductivity and mobility for a Gaussian DOS is more pronounced than that for the exponential DOS.

  3. Investigation of the current-voltage characteristics, the electric field distribution and the charge collection efficiency in x-ray sensors based on chromium compensated gallium arsenide

    NASA Astrophysics Data System (ADS)

    Tyazhev, A.; Novikov, V.; Tolbanov, O.; Zarubin, A.; Fiederle, M.; Hamann, E.

    2014-09-01

    In this work we present the results of experimental study of the current-voltage characteristics, the electric field distribution and the charge collection efficiency in X-ray sensors based on high resistivity, chromium compensated gallium arsenide (HR GaAs). The experimental samples were 0.1-0.25 cm2 pad sensors with the sensitive layer thickness in the range of 250-1000 μm. It has been shown that the current-voltage characteristics in the range 0.02 - 1 V are determined by the high-resistance sensor bulk. A physical model of the nonequilibrium charge carrier transport has been suggested to estimate the Schottky barrier height in the contact of "metal-semiconductor" and the sensor material resistivity. It has been established that the sensor resistivity reaches 1.5 GOhmṡcm at room temperature, with the Schottky barrier height constituting 0.80 - 0.82 eV. The electric field distribution was investigated using the Pockels effect at a wavelength of 920 nm. It has been found experimentally that in HR GaAs sensors the electric field distribution is much more homogeneous compared to the sensors based on SI GaAs: EL2. It has been shown that the temporal fluctuations of the electric field are absent in HR GaAs sensors. Analysis of the charge collection efficiency as a function of bias has demonstrated, that in the HR GaAs material the values of the mobility-lifetime product of the nonequilibrium charge carriers are in the order of 10-4 cm2/V and 3ṡ10-7 cm2/V for electrons and holes, respectively.

  4. Depinning and nonequilibrium dynamic phases of particle assemblies driven over random and ordered substrates: a review

    NASA Astrophysics Data System (ADS)

    Reichhardt, C.; Olson Reichhardt, C. J.

    2017-02-01

    We review the depinning and nonequilibrium phases of collectively interacting particle systems driven over random or periodic substrates. This type of system is relevant to vortices in type-II superconductors, sliding charge density waves, electron crystals, colloids, stripe and pattern forming systems, and skyrmions, and could also have connections to jamming, glassy behaviors, and active matter. These systems are also ideal for exploring the broader issues of characterizing transient and steady state nonequilibrium flow phases as well as nonequilibrium phase transitions between distinct dynamical phases, analogous to phase transitions between different equilibrium states. We discuss the differences between elastic and plastic depinning on random substrates and the different types of nonequilibrium phases which are associated with specific features in the velocity-force curves, fluctuation spectra, scaling relations, and local or global particle ordering. We describe how these quantities can change depending on the dimension, anisotropy, disorder strength, and the presence of hysteresis. Within the moving phase we discuss how there can be a transition from a liquid-like state to dynamically ordered moving crystal, smectic, or nematic states. Systems with periodic or quasiperiodic substrates can have multiple nonequilibrium second or first order transitions in the moving state between chaotic and coherent phases, and can exhibit hysteresis. We also discuss systems with competing repulsive and attractive interactions, which undergo dynamical transitions into stripes and other complex morphologies when driven over random substrates. Throughout this work we highlight open issues and future directions such as absorbing phase transitions, nonequilibrium work relations, inertia, the role of non-dissipative dynamics such as Magnus effects, and how these results could be extended to the broader issues of plasticity in crystals, amorphous solids, and jamming phenomena.

  5. Depinning and nonequilibrium dynamic phases of particle assemblies driven over random and ordered substrates: A review

    DOE PAGES

    Reichhardt, Charles; Olson Reichhardt, Cynthia Jane

    2016-12-20

    Here, we review the depinning and nonequilibrium phases of collectively interacting particle systems driven over random or periodic substrates. This type of system is relevant to vortices in type-II superconductors, sliding charge density waves, electron crystals, colloids, stripe and pattern forming systems, and skyrmions, and could also have connections to jamming, glassy behaviors, and active matter. These systems are also ideal for exploring the broader issues of characterizing transient and steady state nonequilibrium flow phases as well as nonequilibrium phase transitions between distinct dynamical phases, analogous to phase transitions between different equilibrium states. We discuss the differences between elastic andmore » plastic depinning on random substrates and the different types of nonequilibrium phases which are associated with specific features in the velocity-force curves, fluctuation spectra, scaling relations, and local or global particle ordering. We describe how these quantities can change depending on the dimension, anisotropy, disorder strength, and the presence of hysteresis. Within the moving phase we discuss how there can be a transition from a liquid-like state to dynamically ordered moving crystal, smectic, or nematic states. Systems with periodic or quasiperiodic substrates can have multiple nonequilibrium second or first order transitions in the moving state between chaotic and coherent phases, and can exhibit hysteresis. We also discuss systems with competing repulsive and attractive interactions, which undergo dynamical transitions into stripes and other complex morphologies when driven over random substrates. Throughout this work we highlight open issues and future directions such as absorbing phase transitions, nonequilibrium work relations, inertia, the role of non-dissipative dynamics such as Magnus effects, and how these results could be extended to the broader issues of plasticity in crystals, amorphous solids, and jamming

  6. Depinning and nonequilibrium dynamic phases of particle assemblies driven over random and ordered substrates: A review

    SciTech Connect

    Reichhardt, Charles; Olson Reichhardt, Cynthia Jane

    2016-12-20

    Here, we review the depinning and nonequilibrium phases of collectively interacting particle systems driven over random or periodic substrates. This type of system is relevant to vortices in type-II superconductors, sliding charge density waves, electron crystals, colloids, stripe and pattern forming systems, and skyrmions, and could also have connections to jamming, glassy behaviors, and active matter. These systems are also ideal for exploring the broader issues of characterizing transient and steady state nonequilibrium flow phases as well as nonequilibrium phase transitions between distinct dynamical phases, analogous to phase transitions between different equilibrium states. We discuss the differences between elastic and plastic depinning on random substrates and the different types of nonequilibrium phases which are associated with specific features in the velocity-force curves, fluctuation spectra, scaling relations, and local or global particle ordering. We describe how these quantities can change depending on the dimension, anisotropy, disorder strength, and the presence of hysteresis. Within the moving phase we discuss how there can be a transition from a liquid-like state to dynamically ordered moving crystal, smectic, or nematic states. Systems with periodic or quasiperiodic substrates can have multiple nonequilibrium second or first order transitions in the moving state between chaotic and coherent phases, and can exhibit hysteresis. We also discuss systems with competing repulsive and attractive interactions, which undergo dynamical transitions into stripes and other complex morphologies when driven over random substrates. Throughout this work we highlight open issues and future directions such as absorbing phase transitions, nonequilibrium work relations, inertia, the role of non-dissipative dynamics such as Magnus effects, and how these results could be extended to the broader issues of plasticity in crystals, amorphous solids, and jamming phenomena.

  7. 42 CFR 405.502 - Criteria for determining reasonable charges.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ...) of this section, in the case of services of assistants-at-surgery as defined in § 405.580 in teaching and non-teaching settings, charges that are not more than 16 percent of the prevailing charge in the... carrier determination is one made by a carrier or intermediary or groups of carriers or...

  8. Equilibrium sampling by reweighting nonequilibrium simulation trajectories.

    PubMed

    Yang, Cheng; Wan, Biao; Xu, Shun; Wang, Yanting; Zhou, Xin

    2016-03-01

    Based on equilibrium molecular simulations, it is usually difficult to efficiently visit the whole conformational space of complex systems, which are separated into some metastable regions by high free energy barriers. Nonequilibrium simulations could enhance transitions among these metastable regions and then be applied to sample equilibrium distributions in complex systems, since the associated nonequilibrium effects can be removed by employing the Jarzynski equality (JE). Here we present such a systematical method, named reweighted nonequilibrium ensemble dynamics (RNED), to efficiently sample equilibrium conformations. The RNED is a combination of the JE and our previous reweighted ensemble dynamics (RED) method. The original JE reproduces equilibrium from lots of nonequilibrium trajectories but requires that the initial distribution of these trajectories is equilibrium. The RED reweights many equilibrium trajectories from an arbitrary initial distribution to get the equilibrium distribution, whereas the RNED has both advantages of the two methods, reproducing equilibrium from lots of nonequilibrium simulation trajectories with an arbitrary initial conformational distribution. We illustrated the application of the RNED in a toy model and in a Lennard-Jones fluid to detect its liquid-solid phase coexistence. The results indicate that the RNED sufficiently extends the application of both the original JE and the RED in equilibrium sampling of complex systems.

  9. Equilibrium sampling by reweighting nonequilibrium simulation trajectories

    NASA Astrophysics Data System (ADS)

    Yang, Cheng; Wan, Biao; Xu, Shun; Wang, Yanting; Zhou, Xin

    2016-03-01

    Based on equilibrium molecular simulations, it is usually difficult to efficiently visit the whole conformational space of complex systems, which are separated into some metastable regions by high free energy barriers. Nonequilibrium simulations could enhance transitions among these metastable regions and then be applied to sample equilibrium distributions in complex systems, since the associated nonequilibrium effects can be removed by employing the Jarzynski equality (JE). Here we present such a systematical method, named reweighted nonequilibrium ensemble dynamics (RNED), to efficiently sample equilibrium conformations. The RNED is a combination of the JE and our previous reweighted ensemble dynamics (RED) method. The original JE reproduces equilibrium from lots of nonequilibrium trajectories but requires that the initial distribution of these trajectories is equilibrium. The RED reweights many equilibrium trajectories from an arbitrary initial distribution to get the equilibrium distribution, whereas the RNED has both advantages of the two methods, reproducing equilibrium from lots of nonequilibrium simulation trajectories with an arbitrary initial conformational distribution. We illustrated the application of the RNED in a toy model and in a Lennard-Jones fluid to detect its liquid-solid phase coexistence. The results indicate that the RNED sufficiently extends the application of both the original JE and the RED in equilibrium sampling of complex systems.

  10. Plasma diagnostics of non-equilibrium atmospheric plasma jets

    NASA Astrophysics Data System (ADS)

    Shashurin, Alexey; Scott, David; Keidar, Michael; Shneider, Mikhail

    2014-10-01

    Intensive development and biomedical application of non-equilibrium atmospheric plasma jet (NEAPJ) facilitates rapid growth of the plasma medicine field. The NEAPJ facility utilized at the George Washington University (GWU) demonstrated efficacy for treatment of various cancer types (lung, bladder, breast, head, neck, brain and skin). In this work we review recent advances of the research conducted at GWU concerned with the development of NEAPJ diagnostics including Rayleigh Microwave Scattering setup, method of streamer scattering on DC potential, Rogowski coils, ICCD camera and optical emission spectroscopy. These tools allow conducting temporally-resolved measurements of plasma density, electrical potential, charge and size of the streamer head, electrical currents flowing though the jet, ionization front propagation speed etc. Transient dynamics of plasma and discharge parameters will be considered and physical processes involved in the discharge will be analyzed including streamer breakdown, electrical coupling of the streamer tip with discharge electrodes, factors determining NEAPJ length, cross-sectional shape and propagation path etc.

  11. Relativistic hydrodynamics and non-equilibrium steady states

    NASA Astrophysics Data System (ADS)

    Spillane, Michael; Herzog, Christopher P.

    2016-10-01

    We review recent interest in the relativistic Riemann problem as a method for generating a non-equilibrium steady state. In the version of the problem under consideration, the initial conditions consist of a planar interface between two halves of a system held at different temperatures in a hydrodynamic regime. The new double shock solutions are in contrast with older solutions that involve one shock and one rarefaction wave. We use numerical simulations to show that the older solutions are preferred. Briefly we discuss the effects of a conserved charge. Finally, we discuss deforming the relativistic equations with a nonlinear term and how that deformation affects the temperature and velocity in the region connecting the asymptotic fluids.

  12. Photo-doped carrier dynamics in Mott insulatoring systems

    NASA Astrophysics Data System (ADS)

    Iyoda, Eiki; Ishihara, Sumio

    2013-03-01

    Electron/hole doping in Mott insulators, for example two-dimensional cuprates, has been well investigated in relation to high-Tc superconductivity. Especially related to photo-doping, many experiments on photo-induced phase transition in strongly correlated systems have been made. In the usual photo-doping setup, the system is excited with fs-laser pulse and generated electron-hole pairs affect properties of materials. Recently, another type of photo-doped experiment with heterostructure has been made, and hole or electron carriers are dynamically injected through the heterostructure. In this theoretical study, we examine photo-doped carrier dynamics in the t-J model with dynamically doped holes. We formulate dynamics of the carriers by non-equilibrium Green functions. We take an initial state of holes and decompose the non-equilibrium Green's function into a series of equilibrium Green's functions by using Wick's theorem. The effect of the initial distribution appears from the higher terms in the series. We treat magnons with the self-consistent Born approximation. The non-equilibrium Green function derived in this way shows double time dependence. We will present physical quantities in transient process, for example, one-particle excitation spectra for holes.

  13. Study of non-equilibrium transport phenomena

    NASA Technical Reports Server (NTRS)

    Sharma, Surendra P.

    1987-01-01

    Nonequilibrium phenomena due to real gas effects are very important features of low density hypersonic flows. The shock shape and emitted nonequilibrium radiation are identified as the bulk flow behavior parameters which are very sensitive to the nonequilibrium phenomena. These parameters can be measured in shock tubes, shock tunnels, and ballistic ranges and used to test the accuracy of computational fluid dynamic (CFD) codes. Since the CDF codes, by necessity, are based on multi-temperature models, it is also desirable to measure various temperatures, most importantly, the vibrational temperature. The CFD codes would require high temperature rate constants, which are not available at present. Experiments conducted at the NASA Electric Arc-driven Shock Tube (EAST) facility reveal that radiation from steel contaminants overwhelm the radiation from the test gas. For the measurement of radiation and the chemical parameters, further investigation and then appropriate modifications of the EAST facility are required.

  14. Nonequilibrium Ablation of Phenolic Impregnated Carbon Ablator

    NASA Technical Reports Server (NTRS)

    Milos, Frank S.; Chen, Yih K.; Gokcen, Tahir

    2012-01-01

    In previous work, an equilibrium ablation and thermal response model for Phenolic Impregnated Carbon Ablator was developed. In general, over a wide range of test conditions, model predictions compared well with arcjet data for surface recession, surface temperature, in-depth temperature at multiple thermocouples, and char depth. In this work, additional arcjet tests were conducted at stagnation conditions down to 40 W/sq cm and 1.6 kPa. The new data suggest that nonequilibrium effects become important for ablation predictions at heat flux or pressure below about 80 W/sq cm or 10 kPa, respectively. Modifications to the ablation model to account for nonequilibrium effects are investigated. Predictions of the equilibrium and nonequilibrium models are compared with the arcjet data.

  15. Local entropy of a nonequilibrium fermion system

    NASA Astrophysics Data System (ADS)

    Stafford, Charles A.; Shastry, Abhay

    2017-03-01

    The local entropy of a nonequilibrium system of independent fermions is investigated and analyzed in the context of the laws of thermodynamics. It is shown that the local temperature and chemical potential can only be expressed in terms of derivatives of the local entropy for linear deviations from local equilibrium. The first law of thermodynamics is shown to lead to an inequality, not equality, for the change in the local entropy as the nonequilibrium state of the system is changed. The maximum entropy principle (second law of thermodynamics) is proven: a nonequilibrium distribution has a local entropy less than or equal to a local equilibrium distribution satisfying the same constraints. It is shown that the local entropy of the system tends to zero when the local temperature tends to zero, consistent with the third law of thermodynamics.

  16. Charge carrier effective mass and concentration derived from combination of Seebeck coefficient and Te125 NMR measurements in complex tellurides

    SciTech Connect

    Levin, E. M.

    2016-06-27

    Thermoelectric materials utilize the Seebeck effect to convert heat to electrical energy. The Seebeck coefficient (thermopower), S, depends on the free (mobile) carrier concentration, n, and effective mass, m*, as S ~ m*/n2/3. The carrier concentration in tellurides can be derived from 125Te nuclear magnetic resonance (NMR) spin-lattice relaxation measurements. The NMR spin-lattice relaxation rate, 1/T1, depends on both n and m* as 1/T1~(m*)3/2n (within classical Maxwell-Boltzmann statistics) or as 1/T1~(m*)2n2/3 (within quantum Fermi-Dirac statistics), which challenges the correct determination of the carrier concentration in some materials by NMR. Here it is shown that the combination of the Seebeck coefficient and 125Te NMR spin-lattice relaxation measurements in complex tellurides provides a unique opportunity to derive the carrier effective mass and then to calculate the carrier concentration. This approach was used to study AgxSbxGe50–2xTe50, well-known GeTe-based high-efficiency tellurium-antimony-germanium-silver thermoelectric materials, where the replacement of Ge by [Ag+Sb] results in significant enhancement of the Seebeck coefficient. Thus, values of both m* and n derived using this combination show that the enhancement of thermopower can be attributed primarily to an increase of the carrier effective mass and partially to a decrease of the carrier concentration when the [Ag+Sb] content increases.

  17. Nonequilibrium air radiation (Nequair) program: User's manual

    NASA Technical Reports Server (NTRS)

    Park, C.

    1985-01-01

    A supplement to the data relating to the calculation of nonequilibrium radiation in flight regimes of aeroassisted orbital transfer vehicles contains the listings of the computer code NEQAIR (Nonequilibrium Air Radiation), its primary input data, and explanation of the user-supplied input variables. The user-supplied input variables are the thermodynamic variables of air at a given point, i.e., number densities of various chemical species, translational temperatures of heavy particles and electrons, and vibrational temperature. These thermodynamic variables do not necessarily have to be in thermodynamic equilibrium. The code calculates emission and absorption characteristics of air under these given conditions.

  18. Fluctuation theorem for partially masked nonequilibrium dynamics

    NASA Astrophysics Data System (ADS)

    Shiraishi, Naoto; Sagawa, Takahiro

    2015-01-01

    We establish a generalization of the fluctuation theorem for partially masked nonequilibrium dynamics. We introduce a partial entropy production with a subset of all possible transitions, and show that the partial entropy production satisfies the integral fluctuation theorem. Our result reveals the fundamental properties of a broad class of autonomous as well as nonautonomous nanomachines. In particular, our result gives a unified fluctuation theorem for both autonomous and nonautonomous Maxwell's demons, where mutual information plays a crucial role. Furthermore, we derive a fluctuation-dissipation theorem that relates nonequilibrium stationary current to two kinds of equilibrium fluctuations.

  19. Nonequilibrium temperature response for stochastic overdamped systems

    NASA Astrophysics Data System (ADS)

    Falasco, G.; Baiesi, M.

    2016-04-01

    The thermal response of nonequilibrium systems requires the knowledge of concepts that go beyond entropy production. This is showed for systems obeying overdamped Langevin dynamics, either in steady states or going through a relaxation process. Namely, we derive the linear response to perturbations of the noise intensity, mapping it onto the quadratic response to a constant small force. The latter, displaying divergent terms, is explicitly regularised with a novel path-integral method. The nonequilibrium equivalents of heat capacity and thermal expansion coefficient are two applications of this approach, as we show with numerical examples.

  20. Energy repartition in the nonequilibrium steady state

    NASA Astrophysics Data System (ADS)

    Yan, Peng; Bauer, Gerrit E. W.; Zhang, Huaiwu

    2017-01-01

    The concept of temperature in nonequilibrium thermodynamics is an outstanding theoretical issue. We propose an energy repartition principle that leads to a spectral (mode-dependent) temperature in steady-state nonequilibrium systems. The general concepts are illustrated by analytic solutions of the classical Heisenberg spin chain connected to Langevin heat reservoirs with arbitrary temperature profiles. Gradients of external magnetic fields are shown to localize spin waves in a Wannier-Zeemann fashion, while magnon interactions renormalize the spectral temperature. Our generic results are applicable to other thermodynamic systems such as Newtonian liquids, elastic solids, and Josephson junctions.

  1. Nonequilibrium noise in electrophoresis: The microion wind

    NASA Astrophysics Data System (ADS)

    Saha, Suropriya; Ramaswamy, Sriram

    2014-03-01

    A colloid supported against gravitational settling by means of an imposed electric field behaves, on average, as if it is at equilibrium in a confining potential [T. M. Squires, J. Fluid Mech. 443, 403 (2001), 10.1017/S0022112001005432]. We show, however, that the effective Langevin equation for the colloid contains a nonequilibrium noise source, proportional to the field, arising from the thermal motion of dissolved ions. The position fluctuations of the colloid show strong, experimentally testable signatures of nonequilibrium behavior, including a highly anisotropic, frequency-dependent "effective temperature" obtained from the fluctuation-dissipation ratio.

  2. Nonequilibrium statistical physics with fictitious time.

    PubMed

    Samanta, Himadri S; Bhattacharjee, J K

    2006-04-01

    Problems in nonequilibrium statistical physics are characterized by the absence of a fluctuation dissipation theorem. The usual analytic route for treating these vast class of problems is to use response fields in addition to the real fields that are pertinent to a given problem. This line of argument was introduced by Martin, Siggia, and Rose. We show that instead of using the response field, one can, following the stochastic quantization of Parisi and Wu, introduce a fictitious time. In this extra dimension a fluctuation dissipation theorem is built in and provides a different outlook to problems in nonequilibrium statistical physics.

  3. 47 CFR 69.607 - Disbursement of Carrier Common Line residue.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Disbursement of Carrier Common Line residue. 69.607 Section 69.607 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Exchange Carrier Association § 69.607 Disbursement of Carrier...

  4. Stacking dependence of carrier transport properties in multilayered black phosphorous.

    PubMed

    Sengupta, A; Audiffred, M; Heine, T; Niehaus, T A

    2016-02-24

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green's function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  5. Stacking dependence of carrier transport properties in multilayered black phosphorous

    NASA Astrophysics Data System (ADS)

    Sengupta, A.; Audiffred, M.; Heine, T.; Niehaus, T. A.

    2016-02-01

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green’s function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  6. Nonequilibrium functional renormalization group for interacting quantum systems.

    PubMed

    Jakobs, Severin G; Meden, Volker; Schoeller, Herbert

    2007-10-12

    We propose a nonequilibrium version of functional renormalization within the Keldysh formalism by introducing a complex-valued flow parameter in the Fermi or Bose functions of each reservoir. Our cutoff scheme provides a unified approach to equilibrium and nonequilibrium situations. We apply it to nonequilibrium transport through an interacting quantum wire coupled to two reservoirs and show that the nonequilibrium occupation induces new power law exponents for the conductance.

  7. Effect of carrier capture by deep levels on lateral photoconductivity of InGaAs/GaAs quantum dot structures

    NASA Astrophysics Data System (ADS)

    Vakulenko, O. V.; Golovynskyi, S. L.; Kondratenko, S. V.

    2011-08-01

    Having used thermally stimulated conductivity (TSC) technique, we identified deep electron traps that produce strong effects on charge carrier transport and photoconductivity in InGaAs/GaAs quantum dot (QD) structures. The values of deep levels below the conduction band of GaAs at 0.16, 0.22, and 0.35 eV are obtained from the analysis of the shapes of TSC curves after the excitation with the quanta energy hv = 0.9, 1.2, and 1.6 eV. The level 0.16 eV in depth is an effective electron trap that provides crossing of lateral conductivity with a high-resistance mode and, therefore, causes a high photocurrent sensitivity of about 3 A/W at 77 K with excitation by interband transitions in QDs. We determined the charge density of electrons captured by the (Ec - 0.16 eV) level to be 2 × 10-6 C/cm2 at 77 K that induces electric field ˜ 105 V/cm in a vicinity of QDs. The state at Ec - 0.22 eV is shown to be related to the recombination center that can hold non-equilibrium holes over a long time under the condition that the non-equilibrium holes are localized by the quantum states of QDs. In the course of long-term electron storage in a vicinity of QDs, an electron trapped at the (Ec - 0.16) eV level can be recaptured by a deeper spatially remote (Ec - 0.22 eV) level that allows the TSC peak observation at 106 K.

  8. Boundary stability under nonequilibrium conditions. Final report

    SciTech Connect

    Hackney, S.A.; Lee, J.K.; Plichta, M.R.

    1999-08-01

    Summaries of research accomplished are given for the following areas: Morphological (Diffusional) Stability; A New Algorithm for Numerical Modeling of Non-equilibrium Materials Behavior; A Unified Treatment of Single and Microcrystalline Film Edge Instabilities; and Validation of the Structure Based Grain Boundary Diffusion/Migration Model.

  9. Local composition and carrier concentration in Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys from 125Te NMR and microscopy

    NASA Astrophysics Data System (ADS)

    Levin, E. M.; Kramer, M. J.; Schmidt-Rohr, K.

    2014-11-01

    Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys, (i) quenched from 923 K or (ii) quenched and annealed at 573 K for 2 h, have been studied by 125Te NMR, X-ray diffraction, electron and optical microscopy, as well as energy dispersive spectroscopy. Depending on the composition and thermal treatment history, 125Te NMR spectra exhibit different resonance frequencies and spin-lattice relaxation times, which can be assigned to different phases in the alloy. Quenched and annealed Pb0.7Ge0.3Te alloys can be considered as solid solutions but are shown by NMR to have components with various carrier concentrations. Quenched and annealed Pb0.5Ge0.5Te alloys contain GeTe- and PbTe-based phases with different compositions and charge carrier concentrations. Based on the analysis of non-exponential 125Te NMR spin-lattice relaxation, the fractions and carrier concentrations of the various phases have been estimated. Our data show that alloying of PbTe with Ge results in the formation of chemically and electronically inhomogeneous systems. 125Te NMR can be used as an efficient probe to detect the local composition in equilibrium as well as non-equilibrium states, and to determine the local carrier concentrations in complex multiphase tellurides.

  10. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions.

    PubMed

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-22

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences (GC)NGC and (GC)1(TA)NTA (GC)3 sandwiched between two Pt electrodes. We show that at low temperature DNA sequence (GC)NGC exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence (GC)1(TA)NTA (GC)3 with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules.

  11. Non-Condon nonequilibrium Fermi's golden rule rates from the linearized semiclassical method

    NASA Astrophysics Data System (ADS)

    Sun, Xiang; Geva, Eitan

    2016-08-01

    The nonequilibrium Fermi's golden rule describes the transition between a photoexcited bright donor electronic state and a dark acceptor electronic state, when the nuclear degrees of freedom start out in a nonequilibrium state. In a previous paper [X. Sun and E. Geva, J. Chem. Theory Comput. 12, 2926 (2016)], we proposed a new expression for the nonequilibrium Fermi's golden rule within the framework of the linearized semiclassical approximation and based on the Condon approximation, according to which the electronic coupling between donor and acceptor is assumed constant. In this paper we propose a more general expression, which is applicable to the case of non-Condon electronic coupling. We test the accuracy of the new non-Condon nonequilibrium Fermi's golden rule linearized semiclassical expression on a model where the donor and acceptor potential energy surfaces are parabolic and identical except for shifts in the equilibrium energy and geometry, and the coupling between them is linear in the nuclear coordinates. Since non-Condon effects may or may not give rise to conical intersections, both possibilities are examined by considering the following: (1) A modified Garg-Onuchic-Ambegaokar model for charge transfer in the condensed phase, where the donor-acceptor coupling is linear in the primary-mode coordinate, and for which non-Condon effects do not give rise to a conical intersection; (2) the linear vibronic coupling model for electronic transitions in gas phase molecules, where non-Condon effects give rise to conical intersections. We also present a comprehensive comparison between the linearized semiclassical expression and a progression of more approximate expressions, in both normal and inverted regions, and over a wide range of initial nonequilibrium states, temperatures, and frictions.

  12. Non-equilibrium Transport in Carbon based Adsorbate Systems

    NASA Astrophysics Data System (ADS)

    Fürst, Joachim; Brandbyge, Mads; Stokbro, Kurt; Jauho, Antti-Pekka

    2007-03-01

    We have used the Atomistix Tool Kit(ATK) and TranSIESTA[1] packages to investigate adsorption of iron atoms on a graphene sheet. The technique of both codes is based on density functional theory using local basis sets[2], and non-equilibrium Green's functions (NEGF) to calculate the charge distribution under external bias. Spin dependent electronic structure calculations are performed for different iron coverages. These reveal adsorption site dependent charge transfer from iron to graphene leading to screening effects. Transport calculations show spin dependent scattering of the transmission which is analysed obtaining the transmission eigenchannels for each spin type. The phenomena of electromigration of iron in these systems at finite bias will be discussed, estimating the so-called wind force from the reflection[3]. [1] M. Brandbyge, J.-L. Mozos, P. Ordejon, J. Taylor, and K. Stokbro. Physical Review B (Condensed Matter and Materials Physics), 65(16):165401/11-7, 2002. [2] Jose M. Soler, Emilio Artacho, Julian D. Gale, Alberto Garcia, Javier Junquera, Pablo Ordejon, and Daniel Sanchez-Portal. Journal of Physics Condensed Matter, 14(11):2745-2779, 2002. [3] Sorbello. Theory of electromigration. Solid State Physics, 1997.

  13. Long-lived nonequilibrium states in the Hubbard model with an electric field

    NASA Astrophysics Data System (ADS)

    Joura, Alexander V.; Freericks, J. K.; Lichtenstein, Alexander I.

    2015-06-01

    We study the single-band Hubbard model in the presence of a large spatially uniform electric field out of equilibrium. Using the Keldysh nonequilibrium formalism, we solve the problem using perturbation theory in the Coulomb interaction U . We present numerical results for the charge current, the total energy of the system, and the double occupancy on an infinite-dimensional hypercubic lattice with nearest-neighbor hopping. The system is isolated from an external bath and is in the paramagnetic state. We show that an electric field pulse can drive the system to a steady nonequilibrium state, which does not evolve into a thermal state. We compare results obtained within second-order perturbation theory (SOPT), self-consistent SOPT, and iterated perturbation theory (IPT). We also discuss the importance of initial conditions for a system which is not coupled to an external bath.

  14. Nonequilibrium solvent effects in Born-Oppenheimer molecular dynamics for ground and excited electronic states

    DOE PAGES

    Bjorgaard, Josiah August; Velizhanin, Kirill A.; Tretiak, Sergei

    2016-04-15

    The effects of solvent on molecular processes such as excited state relaxation and photochemical reaction often occurs in a nonequilibrium regime. Dynamic processes such as these can be simulated using excited state molecular dynamics. In this paper, we describe methods of simulating nonequilibrium solvent effects in excited state molecular dynamics using linear-response time-dependent density functional theory and apparent surface charge methods. These developments include a propagation method for solvent degrees of freedom and analytical energy gradients for the calculation of forces. Finally, molecular dynamics of acetaldehyde in water or acetonitrile are demonstrated where the solute-solvent system is out of equilibriummore » due to photoexcitation and emission.« less

  15. Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers

    SciTech Connect

    Kuciauskas, Darius; Li, Jian V.; Contreras, Miguel A.; Pankow, Joel; Dippo, Patricia; Young, Matthew; Mansfield, Lorelle M.; Noufi, Rommel; Levi, Dean

    2013-01-01

    We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm2 V-1s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×1015–1017cm-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

  16. Nonequilibrium spin-polarized thermal transport in ferromagnetic-quantum dot-metal system

    NASA Astrophysics Data System (ADS)

    Xu, Li; Li, Zhi-Jian; Niu, Pengbin; Nie, Yi-Hang

    2016-10-01

    We use nonequilibrium Green function to analyze the nonequilibrium spin-polarized thermal transport through the ferromagnetic-quantum dot-metal system, in which a quantum dot (QD) is coupled to the ferromagnetic and metal electrodes with the voltage bias and the temperature shift. The differential thermoelectric conductance L (θ) is always zero and has no relation with the temperature shift when ε is equal to the Fermi level. The positive and negative values of L (θ) manifest the thermoelectric characteristic of electron-like (or hole-like) carrier when the temperature shift is nonzero. The electrostatic potential U becomes spin-dependent, and makes the dot level renormalization when the ferromagnetic-quantum dot-metal system is driven by the voltage bias and the temperature shift. We define that the spin polarization of the currents between the spin current Is and the electric current Ic is denoted as Is /Ic. The spin polarization Is /Ic shows novel and unique physical phenomenon when the voltage bias and the temperature shift are changed in the nonequilibrium state. Another interesting phenomenon is that we can obtain the pure spin current and a zero point of the thermocurrent Ith by adjusting the voltage bias and the temperature shift.

  17. 14 CFR 221.2 - Carrier's duty.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Carrier's duty. 221.2 Section 221.2 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) ECONOMIC..., and provide and keep open to public inspection, tariffs showing all fares, and charges for foreign...

  18. Design and Synthesis of Nonequilibrium Systems.

    PubMed

    Cheng, Chuyang; McGonigal, Paul R; Stoddart, J Fraser; Astumian, R Dean

    2015-09-22

    The active transport of ions and molecules across cell membranes is essential to creating the concentration gradients that sustain life in all living organisms, be they bacteria, fungi, plants, animals or Homo sapiens. Nature uses active transport everywhere for everything. Molecular biologists have long been attracted to the study of active transport and continue to this day to investigate and elucidate the tertiary structures of the complex motor proteins that sustain it, while physicists, interested in nonequilibrium statistical mechanics, have developed theoretical models to describe the driven ratcheting motions that are crucial to its function. The increasingly detailed understanding that contemporary science has acquired relating to active transport, however, has yet to lead to the design and construction of artificial molecular motors capable of employing ratchet-driven motions that can also perform work against concentration gradients. Mechanically interlocked molecules (MIMs) in the form of pseudo- and semirotaxanes are showing some encouraging signs in meeting these goals. This review summarizes recent progress in making artificial molecular motors that can perform work by "pumping" tetracationic rings into high-energy states. The launching pad is a bistable [2]rotaxane whose dumbbell component contains two electron-donating recognition sites, one, a tetrathiafulvalene (TTF) unit, which interacts more strongly with the ring component, cyclobis(paraquat-p-phenylene) (CBPQT(4+)), containing two electron-accepting bipyridinium units, than does the other 1,5-dioxynaphthalene (DNP) unit. Switching can be induced electrochemically by oxidizing the TTF unit to a TTF(•+) radical cation, whereupon Coulombic repulsion takes care of moving the ring to the DNP unit. Reduction of the radical cation resets the switch. Molecular switches operate at, or close to, equilibrium. Any work done during one switching event is undone during the reset. Molecular motors, on the

  19. A nonequilibrium phase transition in immune response

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Qi, An-Shen

    2004-07-01

    The dynamics of immune response correlated to signal transduction in immune thymic cells (T cells) is studied. In particular, the problem of the phosphorylation of the immune-receptor tyrosine-based activation motifs (ITAM) is explored. A nonlinear model is established on the basis of experimental observations. The behaviours of the model can be well analysed using the concepts of nonequilibrium phase transitions. In addition, the Riemann-Hugoniot cusp catastrophe is demonstrated by the model. Due to the application of the theory of nonequilibrium phase transitions, the biological phenomena can be clarified more precisely. The results can also be used to further explain the signal transduction and signal discrimination of an important type of immune T cell.

  20. Quantum Langevin model for nonequilibrium condensation

    NASA Astrophysics Data System (ADS)

    Chiocchetta, Alessio; Carusotto, Iacopo

    2014-08-01

    We develop a quantum model for nonequilibrium Bose-Einstein condensation of photons and polaritons in planar microcavity devices. The model builds on laser theory and includes the spatial dynamics of the cavity field, a saturation mechanism, and some frequency dependence of the gain: quantum Langevin equations are written for a cavity field coupled to a continuous distribution of externally pumped two-level emitters with a well-defined frequency. As an example of application, the method is used to study the linearized quantum fluctuations around a steady-state condensed state. In the good-cavity regime, an effective equation for the cavity field only is proposed in terms of a stochastic Gross-Pitaevskii equation. Perspectives in view of a full quantum simulation of the nonequilibrium condensation process are finally sketched.

  1. An update on the nonequilibrium linear response

    NASA Astrophysics Data System (ADS)

    Baiesi, M.; Maes, C.

    2013-01-01

    The unique fluctuation-dissipation theorem for equilibrium stands in contrast with the wide variety of nonequilibrium linear response formulae. Their most traditional approach is ‘analytic’, which, in the absence of detailed balance, introduces the logarithm of the stationary probability density as observable. The theory of dynamical systems offers an alternative with a formula that continues to work even when the stationary distribution is not smooth. We show that this method works equally well for stochastic dynamics, and we illustrate it with a numerical example for the perturbation of circadian cycles. A second ‘probabilistic’ approach starts from dynamical ensembles and expands the probability weights on path space. This line suggests new physical questions, as we meet the frenetic contribution to linear response, and the relevance of the change in dynamical activity in the relaxation to a (new) nonequilibrium condition.

  2. Scaled-Up Nonequilibrium Air Plasmas

    DTIC Science & Technology

    2009-10-01

    electrode pairs will be tested to increase the plasma volume. In addition, thermionic cathodes (LaCrO3, LaB6) will be examined to enhance the electron...measure the cathode fall in the glow discharge regime. Current density, electric field strength and other important plasma parameters will be...thermal nonequilibrium, and together with electrical discharge characteristics, estimating the electron density and reduced electric field strength (E/N

  3. Nonequilibrium Floquet States in Topological Kondo Insulators

    DTIC Science & Technology

    2016-02-04

    proposed state: the non-equilibrium Floquet topological metal. The main idea relies on the knowledge that the low - temperature insulating state of SmB6...is readily transformed to a metallic state by application of external pressure [Cooley 1995]. With low - temperature topological conduction occurring...reflecting on years of experience in performing low - temperature ultrasound measurements on single-crystal samples, both the Sapporo and UMD groups agree

  4. Efficiency bounds for nonequilibrium heat engines

    SciTech Connect

    Mehta, Pankaj; Polkovnikov, Anatoli

    2013-05-15

    We analyze the efficiency of thermal engines (either quantum or classical) working with a single heat reservoir like an atmosphere. The engine first gets an energy intake, which can be done in an arbitrary nonequilibrium way e.g. combustion of fuel. Then the engine performs the work and returns to the initial state. We distinguish two general classes of engines where the working body first equilibrates within itself and then performs the work (ergodic engine) or when it performs the work before equilibrating (non-ergodic engine). We show that in both cases the second law of thermodynamics limits their efficiency. For ergodic engines we find a rigorous upper bound for the efficiency, which is strictly smaller than the equivalent Carnot efficiency. I.e. the Carnot efficiency can be never achieved in single reservoir heat engines. For non-ergodic engines the efficiency can be higher and can exceed the equilibrium Carnot bound. By extending the fundamental thermodynamic relation to nonequilibrium processes, we find a rigorous thermodynamic bound for the efficiency of both ergodic and non-ergodic engines and show that it is given by the relative entropy of the nonequilibrium and initial equilibrium distributions. These results suggest a new general strategy for designing more efficient engines. We illustrate our ideas by using simple examples. -- Highlights: ► Derived efficiency bounds for heat engines working with a single reservoir. ► Analyzed both ergodic and non-ergodic engines. ► Showed that non-ergodic engines can be more efficient. ► Extended fundamental thermodynamic relation to arbitrary nonequilibrium processes.

  5. Lattice Boltzmann approach for complex nonequilibrium flows.

    PubMed

    Montessori, A; Prestininzi, P; La Rocca, M; Succi, S

    2015-10-01

    We present a lattice Boltzmann realization of Grad's extended hydrodynamic approach to nonequilibrium flows. This is achieved by using higher-order isotropic lattices coupled with a higher-order regularization procedure. The method is assessed for flow across parallel plates and three-dimensional flows in porous media, showing excellent agreement of the mass flow with analytical and numerical solutions of the Boltzmann equation across the full range of Knudsen numbers, from the hydrodynamic regime to ballistic motion.

  6. Nonequilibrium diagrammatic technique for Hubbard Green functions

    NASA Astrophysics Data System (ADS)

    Chen, Feng; Ochoa, Maicol A.; Galperin, Michael

    2017-03-01

    We introduce diagrammatic technique for Hubbard nonequilibrium Green functions. The formulation is an extension of equilibrium considerations for strongly correlated lattice models to description of current carrying molecular junctions. Within the technique intra-system interactions are taken into account exactly, while molecular coupling to contacts is used as a small parameter in perturbative expansion. We demonstrate the viability of the approach with numerical simulations for a generic junction model of quantum dot coupled to two electron reservoirs.

  7. Nonequilibrium functional bosonization of quantum wire networks

    SciTech Connect

    Ngo Dinh, Stephane; Bagrets, Dmitry A.; Mirlin, Alexander D.

    2012-11-15

    We develop a general approach to nonequilibrium nanostructures formed by one-dimensional channels coupled by tunnel junctions and/or by impurity scattering. The formalism is based on nonequilibrium version of functional bosonization. A central role in this approach is played by the Keldysh action that has a form reminiscent of the theory of full counting statistics. To proceed with evaluation of physical observables, we assume the weak-tunneling regime and develop a real-time instanton method. A detailed exposition of the formalism is supplemented by two important applications: (i) tunneling into a biased Luttinger liquid with an impurity, and (ii) quantum Hall Fabry-Perot interferometry. - Highlights: Black-Right-Pointing-Pointer A nonequilibrium functional bosonization framework for quantum wire networks is developed Black-Right-Pointing-Pointer For the study of observables in the weak tunneling regime a real-time instanton method is elaborated. Black-Right-Pointing-Pointer We consider tunneling into a biased Luttinger liquid with an impurity. Black-Right-Pointing-Pointer We analyze electronic Fabry-Perot interferometers in the integer quantum Hall regime.

  8. Non-equilibrium spatial dynamics of ecosystems.

    PubMed

    Guichard, Frederic; Gouhier, Tarik C

    2014-09-01

    Ecological systems show tremendous variability across temporal and spatial scales. It is this variability that ecologists try to predict and that managers attempt to harness in order to mitigate risk. However, the foundations of ecological science and its mainstream agenda focus on equilibrium dynamics to describe the balance of nature. Despite a rich body of literature on non-equilibrium ecological dynamics, we lack a well-developed set of predictions that can relate the spatiotemporal heterogeneity of natural systems to their underlying ecological processes. We argue that ecology needs to expand its current toolbox for the study of non-equilibrium ecosystems in order to both understand and manage their spatiotemporal variability. We review current approaches and outstanding questions related to the study of spatial dynamics and its application to natural ecosystems, including the design of reserves networks. We close by emphasizing the importance of ecosystem function as a key component of a non-equilibrium ecological theory, and of spatial synchrony as a central phenomenon for its inference in natural systems.

  9. Free carrier absorption in self-activated PbWO4 and Ce-doped Y3(Al0.25Ga0.75)3O12 and Gd3Al2Ga3O12 garnet scintillators

    NASA Astrophysics Data System (ADS)

    Auffray, E.; Korjik, M.; Lucchini, M. T.; Nargelas, S.; Sidletskiy, O.; Tamulaitis, G.; Tratsiak, Y.; Vaitkevičius, A.

    2016-08-01

    Nonequilibrium carrier dynamics in the scintillators prospective for fast timing in high energy physics and medical imaging applications was studied. The time-resolved free carrier absorption investigation was carried out to study the dynamics of nonequilibrium carriers in wide-band-gap scintillation materials: self-activated led tungstate (PbWO4, PWO) ant two garnet crystals, GAGG:Ce and YAGG:Ce. It was shown that free electrons appear in the conduction band of PWO and YAGG:Ce crystals within a sub-picosecond time scale, while the free holes in GAGG:Ce appear due to delocalization from Gd3+ ground states to the valence band within a few picoseconds after short-pulse excitation. The influence of Gd ions on the nonequilibrium carrier dynamics is discussed on the base of comparison the results of the free carrier absorption in GAGG:Ce containing gadolinium and in YAGG without Gd in the host lattice.

  10. Controlling carrier dynamics at the nanoscale

    NASA Astrophysics Data System (ADS)

    Cánovas, Enrique; Bonn, Mischa

    2016-10-01

    This Special issue is motivated by the occasion of the International Conference on Charge Carrier Dynamics at the Nanoscale (CCDNano), held in Santiago de Compostela (Spain) in September 2015. As chairs for the CCDNano meeting, we aimed at bringing together experts from different scientific fields in order to trigger interdisciplinary discussions and collaborations; the ultimate goal of the conference was to serve as a platform to advance and help unifying methodologies and theories from different research sub-fields. We also aimed at a deeper understanding of charge dynamics to contribute to the development of improved or novel nanostructured devices. This special issue keeps that spirit, and intends to provide an overview of ongoing research efforts regarding charge carrier dynamics at the nanoscale.

  11. Particle Emission and Charging Effects Induced by Fracture

    DTIC Science & Technology

    1989-06-15

    recombination with mobile charge carriers). These processes are initiated by bond breaking resulting in the creation of localized departures from...subsequendy decay to yield after-emission. Thermally stimulated relaxation involving mobile charge carriers releasing energy at appropriate recombination...region of contact. This flow of charge is slow because of the poor charge mobility in the rubber. In addition, any oxide layer on the metal also

  12. Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

    NASA Astrophysics Data System (ADS)

    Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung

    2012-04-01

    This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Gm decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior.

  13. PREFACE: Progress in Nonequilibrium Green's Functions IV

    NASA Astrophysics Data System (ADS)

    Bonitz, Michael; Balzer, Karsten

    2010-04-01

    This is the fourth volume1 of articles on the theory of Nonequilibrium Green's functions (NEGF) and their modern application in various fields such as plasma physics, semiconductor physics, molecular electronics and high energy physics. It contains 23 articles written by experts in many-body theory and quantum transport who summarize recent progress in their respective area of research. The articles are based on talks given at the interdisciplinary conference Progress in Nonequilibrium Green's functions IV which was held 17-21 August 2009 at the University of Glasgow, Scotland. This conference continues the tradition of the previous meetings which started in 1999 and which aimed at an informal exchange across field boundaries. The previous meetings and the earlier proceedings proved to be very stimulating not only for young researchers but also for experienced scientists, and we are convinced that this fourth volume will be as successful as the previous ones. As before, this volume includes only extended review-type papers which are written in a way that they are understandable to a broad interdisciplinary audience. All papers published in this volume of Journal of Physics: Conference Series have been peer reviewed through processes administrated by the Editors assuring highest scientific standards. In the review process some papers were substantially revised and improved and some were rejected. This conference would not have been possible without the remarkable work of the local organizing team around John Barker and Scott Roy and the generous financial support from the University of Glasgow and the Deutsche Forschungsgemeinschaft via SFB-Transregio 24. Michael Bonitz and Karsten Balzer Kiel, February 2010 1 The first two volumes are Progress in Nonequilibrium Green's functions, M Bonitz (ed) and Progress in Nonequilibrium Green's functions II, M Bonitz and D Semkat (eds), which were published by World Scientific (Singapore), in 2000 and 2003, respectively (ISBN

  14. Tuning superconductivity by carrier injection

    NASA Astrophysics Data System (ADS)

    Müller, Paul

    2011-03-01

    All high-Tc cuprates are stacking sequences of Cu O2 layers and charge reservoir layers consisting of metal oxides. Upon doping the Cu O2 layers, antiferromagnetic order is destroyed and metallic conductivity is established. Usually doping is achieved by a non-stoichiometric composition of the charge reservoir layer. However, we already have shown that we can change the carrier concentration of Bi 2 Sr 2 CaCu 2 O8 + δ single crystals by current injection along the c- axis. Critical temperature, c-axis resistivity and critical current of intrinsic Josephson junctions can be tuned in a large range from underdoping to extreme overdoping. This effect is persistent up to annealing temperatures of approximately 270 K. Using current injection at higher bias, we were able to reduce the carrier concentration again. We investigated in detail the superconducting properties by performing macroscopic quantum tunneling experiments of intrinsic Josephson junctions. The experiments have been carried out repeatedly on samples, whose properties were changed only by current injection. An exponential increase of the critical current density with hole concentration was observed. At the same time, the capacitance of intrinsic Josephson junctions increased significantly. Finally, only by current injection, we were able to convert into the superconducting state a nonsuperconducting, oxygen depleted sample. This work was done in collaboration with Y. Koval, X.Y. Jin, S. Probst, Y. Simsek, C. Steiner (Universität Erlangen), H. B. Wang (NIMS, Tsukuba), and G. Behr, B. Büchner (IFW Dresden).

  15. Nonequilibrium Phase Chemistry in High Temperature Structure Alloys

    NASA Technical Reports Server (NTRS)

    Wang, R.

    1991-01-01

    Titanium and nickel aluminides of nonequilibrium microstructures and in thin gauge thickness were identified, characterized and produced for potential high temperature applications. A high rate sputter deposition technique for rapid surveillance of the microstructures and nonequilibrium phase is demonstrated. Alloys with specific compositions were synthesized with extended solid solutions, stable dispersoids, and specific phase boundaries associated with different heat treatments. Phase stability and mechanical behavior of these nonequilibrium alloys were investigated and compared.

  16. Raman scattering from molecular conduction junctions: Charge transfer mechanism

    NASA Astrophysics Data System (ADS)

    Oren, Michal; Galperin, Michael; Nitzan, Abraham

    2012-03-01

    We present a model for the charge transfer contribution to surface-enhanced Raman spectroscopy (SERS) in a molecular junction. The model is a generalization of the equilibrium scheme for SERS of a molecule adsorbed on a metal surface [B. N. J. Persson. Chem. Phys. Lett.CHPLBC0009-261410.1016/0009-2614(81)85441-3 82, 561 (1981)]. We extend the same physical consideration to a nonequilibrium situation in a biased molecular junction and to nonzero temperatures. Two approaches are considered and compared: a semiclassical approach appropriate for nonresonance Raman scattering, and a quantum approach based on the nonequilibrium Green's function method. Nonequilibrium effects on this contribution to SERS are demonstrated with numerical examples. It is shown that the semiclassical approach provides an excellent approximation to the full quantum calculation as long as the molecular electronic state is outside the Fermi window, that is, as long as the field-induced charge transfer is small.

  17. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  18. Non-equilibrium slave bosons approach to quantum pumping in interacting quantum dots

    NASA Astrophysics Data System (ADS)

    Citro, Roberta; Romeo, Francesco

    2016-03-01

    We review a time-dependent slave bosons approach within the non-equilibrium Green's function technique to analyze the charge and spin pumping in a strongly interacting quantum dot. We study the pumped current as a function of the pumping phase and of the dot energy level and show that a parasitic current arises, beyond the pure pumping one, as an effect of the dynamical constraints. We finally illustrate an all-electrical mean for spin-pumping and discuss its relevance for spintronics applications.

  19. Nonequilibrium Interlayer Transport in Pulsed Laser Deposition

    SciTech Connect

    Tischler, Jonathan Zachary; Eres, Gyula; Larson, Ben C; Rouleau, Christopher M; Zschack, P.; Lowndes, Douglas H

    2006-01-01

    We use time-resolved surface x-ray diffraction measurements with microsecond range resolution to study the growth kinetics of pulsed laser deposited SrTiO3. Time-dependent surface coverages corresponding to single laser shots were determined directly from crystal truncation rod intensity transients. Analysis of surface coverage evolution shows that extremely fast nonequilibrium interlayer transport, which occurs concurrently with the arrival of the laser plume, dominates the deposition process. A much smaller fraction of material, which is governed by the dwell time between successive laser shots, is transferred by slow, thermally driven interlayer transport processes.

  20. Nonequilibrium Kinetics of Rydberg Atomic States

    SciTech Connect

    Bureyeva, L. A.; Kadomtsev, M. B.; Levashova, M. G.; Lisitsa, V. S.

    2008-10-22

    Two-dimensional quasi-classical model of the radiative-collisional cascade for hydrogen-like systems is developed. The model establishes the correspondence between the quantum and classical approaches. Our calculations of the two-dimensional populations of highly excited atomic hydrogen states for three-body and photorecombination sources of population allow the data of one-dimensional kinetic models to be refined. The calculated intensities of recombination lines demonstrate the degree of nonequilibrium of the Rydberg state populations under typical astrophysical plasma conditions.

  1. Nonequilibrium thermodynamics and Nose-Hoover dynamics.

    PubMed

    Esposito, Massimiliano; Monnai, Takaaki

    2011-05-12

    We show that systems driven by an external force and described by Nose-Hoover dynamics allow for a consistent nonequilibrium thermodynamics description when the thermostatted variable is initially assumed in a state of canonical equilibrium. By treating the "real" variables as the system and the thermostatted variable as the reservoir, we establish the first and second law of thermodynamics. As for Hamiltonian systems, the entropy production can be expressed as a relative entropy measuring the system-reservoir correlations established during the dynamics.

  2. Non-equilibrium Dynamics of DNA Nanotubes

    NASA Astrophysics Data System (ADS)

    Hariadi, Rizal Fajar

    Can the fundamental processes that underlie molecular biology be understood and simulated by DNA nanotechnology? The early development of DNA nanotechnology by Ned Seeman was driven by the desire to find a solution to the protein crystallization problem. Much of the later development of the field was also driven by envisioned applications in computing and nanofabrication. While the DNA nanotechnology community has assembled a versatile tool kit with which DNA nanostructures of considerable complexity can be assembled, the application of this tool kit to other areas of science and technology is still in its infancy. This dissertation reports on the construction of non-equilibrium DNA nanotube dynamic to probe molecular processes in the areas of hydrodynamics and cytoskeletal behavior. As the first example, we used DNA nanotubes as a molecular probe for elongational flow measurement in different micro-scale flow settings. The hydrodynamic flow in the vicinity of simple geometrical objects, such as a rigid DNA nanotube, is amenable to rigorous theoretical investigation. We measured the distribution of elongational flows produced in progressively more complex settings, ranging from the vicinity of an orifice in a microfluidic chamber to within a bursting bubble of Pacific ocean water. This information can be used to constrain theories on the origin of life in which replication involves a hydrodynamically driven fission process, such as the coacervate fission proposed by Oparin. A second theme of this dissertation is the bottom-up construction of a de novo artificial cytoskeleton with DNA nanotubes. The work reported here encompasses structural, locomotion, and control aspects of non-equilibrium cytoskeletal behavior. We first measured the kinetic parameters of DNA nanotube assembly and tested the accuracy of the existing polymerization models in the literature. Toward recapitulation of non-equilibrium cytoskeletal dynamics, we coupled the polymerization of DNA

  3. Non-equilibrium processes in interstellar molecules

    NASA Technical Reports Server (NTRS)

    Strelnitskiy, V. S.

    1979-01-01

    The types of nonequilibrium emission and absorption by interstellar molecules are summarized. The observed brightness emission temperatures of compact OH and H2O sources are discussed using the concept of maser amplification. A single thermodynamic approach was used in which masers and anti-masers are considered as heat engines for the theoretical interpretation of the cosmic maser and anti-maser phenomena. The requirements for different models of pumping are formulated and a classification is suggested for the mechanisms of pumping, according to the source and discharge of energy.

  4. Nonlinear and nonequilibrium dynamics in geomaterials.

    PubMed

    TenCate, James A; Pasqualini, Donatella; Habib, Salman; Heitmann, Katrin; Higdon, David; Johnson, Paul A

    2004-08-06

    The transition from linear to nonlinear dynamical elasticity in rocks is of considerable interest in seismic wave propagation as well as in understanding the basic dynamical processes in consolidated granular materials. We have carried out a careful experimental investigation of this transition for Berea and Fontainebleau sandstones. Below a well-characterized strain, the materials behave linearly, transitioning beyond that point to a nonlinear behavior which can be accurately captured by a simple macroscopic dynamical model. At even higher strains, effects due to a driven nonequilibrium state, and relaxation from it, complicate the characterization of the nonlinear behavior.

  5. Irreversible processes at nonequilibrium steady states

    PubMed Central

    Fox, Ronald Forrest

    1979-01-01

    It is shown that a Liapunov criterion exists for the stability of nonequilibrium steady states. This criterion is based upon the fluctuation-dissipation relation, as was first pointed out by Keizer. At steady states, the Liapunov function is constructed from the covariance matrix for the thermodynamic variables. Unlike the situation around equilibrium, at steady states the covariance matrix and the “excess entropy” matrix are not equivalent. The excess entropy, which serves as the Liapunov function around equilibrium, does not work in this capacity at steady states. Keizer's Liapunov function must be viewed as the first correct candidate for a proper Liapunov function for steady states. PMID:16592649

  6. Interaction of non-equilibrium oxygen plasma with sintered graphite

    NASA Astrophysics Data System (ADS)

    Cvelbar, Uroš

    2013-03-01

    Samples made from sintered graphite with grain size of about 10 μm were exposed to highly non-equilibrium oxygen plasma created in a borosilicate glass tube by an electrodeless RF discharge. The density of charged particles was about 7 × 1015 m-3 and the neutral oxygen atom density 6 × 1021 m-3. The sample temperature was determined by a calibrated IR detector while the surface modifications were quantified by XPS and water drop techniques. The sample surface was rapidly saturated with carbonyl groups. Prolonged treatment of samples caused a decrease in concentration of the groups what was explained by thermal destruction. Therefore, the created functional groups were temperature dependent. The heating of samples resulted in extensive chemical interaction between the O atoms and samples what was best monitored by decreasing of the O atom density with increasing sample temperature. The saturation with functional groups could be restored only after cooling down of the samples and repeated short plasma treatment at low temperature.

  7. Non-equilibrium control of complex solids by nonlinear phononics

    NASA Astrophysics Data System (ADS)

    Mankowsky, Roman; Först, Michael; Cavalleri, Andrea

    2016-06-01

    We review some recent advances in the use of optical fields at terahertz frequencies to drive the lattice of complex materials. We will focus on the control of low energy collective properties of solids, which emerge on average when a high frequency vibration is driven and a new crystal structure induced. We first discuss the fundamentals of these lattice rearrangements, based on how anharmonic mode coupling transforms an oscillatory motion into a quasi-static deformation of the crystal structure. We then discuss experiments, in which selectively changing a bond angle turns an insulator into a metal, accompanied by changes in charge, orbital and magnetic order. We then address the case of light induced non-equilibrium superconductivity, a mysterious phenomenon observed in some cuprates and molecular materials when certain lattice vibrations are driven. Finally, we show that the dynamics of electronic and magnetic phase transitions in complex-oxide heterostructures follow distinctly new physical pathways in case of the resonant excitation of a substrate vibrational mode.

  8. Topological Hall Effect in Skyrmions: A Nonequilibrium Coherent Transport Approach

    NASA Astrophysics Data System (ADS)

    Yin, Gen; Zang, Jiadong; Lake, Roger

    2014-03-01

    Skyrmion is a topological spin texture recently observed in many materials with broken inversion symmetry. In experiments, one effective method to detect the skyrmion crystal phase is the topological Hall measurement. At adiabatic approximation, previous theoretical studies show that the Hall signal is provided by an emergent magnetic field, which explains the topological Hall effect in the classical level. Motivated by the potential device application of skyrmions as digital bits, it is important to understand the topological Hall effect in the mesoscopic level, where the electron coherence should be considered. In this talk, we will discuss the quantum aspects of the topological Hall effect on a tight binding setup solved by nonequilibrium Green's function (NEGF). The charge distribution, Hall potential distribution, thermal broadening effect and the Hall resistivity are investigated in detail. The relation between the Hall resistance and the DM interaction is investigated. Driven by the spin transferred torque (SST), Skyrmion dynamics is previously studied within the adiabatic approximation. At the quantum transport level, this talk will also discuss the non-adiabatic effect in the skyrmion motion with the presence of the topological Hall effect. This material is based upon work supported by the National Science Foundation under Grant Nos. NSF 1128304 and NSF 1124733. It was also supported in part by FAME, one of six centers of STARnet, an SRC program sponsored by MARCO and DARPA.

  9. 47 CFR 69.305 - Carrier cable and wire facilities (C&WF).

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Carrier cable and wire facilities (C&WF). 69.305 Section 69.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Apportionment of Net Investment § 69.305 Carrier cable and...

  10. 47 CFR 69.305 - Carrier cable and wire facilities (C&WF).

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 47 Telecommunication 3 2012-10-01 2012-10-01 false Carrier cable and wire facilities (C&WF). 69.305 Section 69.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Apportionment of Net Investment § 69.305 Carrier cable and...

  11. 47 CFR 69.305 - Carrier cable and wire facilities (C&WF).

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 47 Telecommunication 3 2013-10-01 2013-10-01 false Carrier cable and wire facilities (C&WF). 69.305 Section 69.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Apportionment of Net Investment § 69.305 Carrier cable and...

  12. 47 CFR 69.305 - Carrier cable and wire facilities (C&WF).

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 47 Telecommunication 3 2014-10-01 2014-10-01 false Carrier cable and wire facilities (C&WF). 69.305 Section 69.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Apportionment of Net Investment § 69.305 Carrier cable and...

  13. 47 CFR 69.305 - Carrier cable and wire facilities (C&WF).

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 3 2011-10-01 2011-10-01 false Carrier cable and wire facilities (C&WF). 69.305 Section 69.305 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES (CONTINUED) ACCESS CHARGES Apportionment of Net Investment § 69.305 Carrier cable and...

  14. A phonon scattering bottleneck for carrier cooling in lead chalcogenide nanocrystals.

    PubMed

    Geiregat, Pieter; Delerue, Christophe; Justo, Yolanda; Aerts, Michiel; Spoor, Frank; Van Thourhout, Dries; Siebbeles, Laurens D A; Allan, Guy; Houtepen, Arjan J; Hens, Zeger

    2015-01-27

    The cooling dynamics of hot charge carriers in colloidal lead chalcogenide nanocrystals is studied by hyperspectral transient absorption spectroscopy. We demonstrate a transient accumulation of charge carriers at a high energy critical point in the Brillouin zone. Using a theoretical study of the cooling rate in lead chalcogenides, we attribute this slowing down of charge carrier cooling to a phonon scattering bottleneck around this critical point. The relevance of this observation for the possible harvesting of the excess energy of hot carriers by schemes such as multiexciton generation is discussed.

  15. Copper selenide nanowires and nanocrystallites in alumina: Carrier relaxation, recombination, and trapping

    NASA Astrophysics Data System (ADS)

    Statkutė, G.; Tomašiùnas, R.; Jagminas, A.

    2007-06-01

    Nonequilibrium carrier dynamics in copper selenide (Cu2-δSe δ=0.15, Cu3Se2) nanowires (diameter ≈18 nm, height ≈2 μm) and nanocrystallites (diameter≈18 nm) in femto- and picosecond time domains by the means of a transient dynamic grating technique were investigated. Bulk and quantum confinement approaches were used to fit the experimental results using nonequilibrium carrier fast relaxation, recombination, and trapping mechanisms. A nonradiative Auger recombination was concluded to be the main mechanism of nonequilibrium carrier recombination. The Auger coefficient for copper selenide was estimated of the order of 10-30-10-29 cm6 s-1. Hole trapping at shallow impurity centers in nanowires was interpreted. From calculating the experimental results the trapping parameters and high concentration of centers >1020 cm-3 were evaluated. Finally, direct measurement of carrier lifetime in copper selenide nanostructures showed values of the order of ≈10-10 s. Samples were characterized by the means of transmission electron microscopy, scanning electron microscopy, x-ray diffraction, and optical spectroscopy.

  16. Quantum-classical correspondence principles for locally nonequilibrium driven systems.

    PubMed

    Smith, Eric

    2008-02-01

    Many of the core concepts and (especially field-theoretic) tools of statistical mechanics have developed within the context of thermodynamic equilibrium, where state variables are all taken to be charges, meaning that their values are inherently preserved under reversal of the direction of time. A principle concern of nonequilibrium statistical mechanics is to understand the emergence and stability of currents, quantities whose values change sign under time reversal. Whereas the correspondence between classical charge-valued state variables and their underlying statistical or quantum ensembles is quite well understood, the study of currents away from equilibrium has been more fragmentary, with classical descriptions relying on the asymmetric auxiliary-field formalism of Martin, Siggia, and Rose (and often restricted to the Markovian assumption of Doi and Peliti), while quantum descriptions employ a symmetric two-field formalism introduced by Schwinger and further clarified by Keldysh. In this paper we demonstrate that for quantum ensembles in which superposition is not violated by very strong conditions of decoherence, there is a large natural generalization of the principles and tools of equilibrium, which not only admits but requires the introduction of current-valued state variables. For these systems, not only do Martin-Siggia-Rose (MSR) and Schwinger-Keldysh (SK) field methods both exist, in some cases they provide inequivalent classical and quantum descriptions of identical ensembles. With these systems for examples, we can both study the correspondence between classical and quantum descriptions of currents, and also clarify the nature of the mapping between the structurally homologous but interpretationally different MSR and SK formalisms.

  17. Dynamics of carrier recombination in a semiconductor laser structure

    SciTech Connect

    Dzhioev, R. I. Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K.

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  18. Nonequilibrium radiation and chemistry models for aerocapture vehicle flowfields

    NASA Technical Reports Server (NTRS)

    Carlson, Leland A.

    1991-01-01

    The primary tasks performed are: (1) the development of a second order local thermodynamic nonequilibrium (LTNE) model for atoms; (2) the continued development of vibrational nonequilibrium models; and (3) the development of a new multicomponent diffusion model. In addition, studies comparing these new models with previous models and results were conducted and reported.

  19. Three-dimensional AOTV flowfields in chemical nonequilibrium

    NASA Technical Reports Server (NTRS)

    Gnoffo, P. A.; Mccandless, R. S.

    1986-01-01

    A technique for upwind differencing of the three-dimensional species continuity equations is presented which permits computation of steady flows in chemical equilibrium and nonequilibrium. The capabilities and shortcomings of the present approach for equilibrium and nonequilibrium flows is discussed. Modifications now being investigated to improve computational time are outlined.

  20. Long-range hot-carrier transport in hybrid perovskites visualized by ultrafast microscopy.

    PubMed

    Guo, Zhi; Wan, Yan; Yang, Mengjin; Snaider, Jordan; Zhu, Kai; Huang, Libai

    2017-04-07

    The Shockley-Queisser limit for solar cell efficiency can be overcome if hot carriers can be harvested before they thermalize. Recently, carrier cooling time up to 100 picoseconds was observed in hybrid perovskites, but it is unclear whether these long-lived hot carriers can migrate long distance for efficient collection. We report direct visualization of hot-carrier migration in methylammonium lead iodide (CH3NH3PbI3) thin films by ultrafast transient absorption microscopy, demonstrating three distinct transport regimes. Quasiballistic transport was observed to correlate with excess kinetic energy, resulting in up to 230 nanometers transport distance that could overcome grain boundaries. The nonequilibrium transport persisted over tens of picoseconds and ~600 nanometers before reaching the diffusive transport limit. These results suggest potential applications of hot-carrier devices based on hybrid perovskites.