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Sample records for nonlinear semiconducting devices

  1. Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

    SciTech Connect

    Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.; Maddox, Scott J.; Zhao, Xiaoguang; Fan, Kebin; Bank, Seth R.; Zhang, Xin; Averitt, Richard D.

    2016-01-26

    The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobility thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.

  2. Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

    DOE PAGES

    Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.; ...

    2016-01-26

    The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

  3. Superconducting-semiconducting circuits, devices and systems

    SciTech Connect

    Kroger, H.; Ghoshal, U.S.

    1991-06-18

    This paper describes a superconducting-semiconducting electrical circuit element. It comprises: a superconducting charge controlled three-terminal device, having a device control terminal, a second terminal and a third terminal, wherein the output current between the second and third terminals is controlled by the voltage applied to the control terminal, and wherein the output current exhibits superconducting characteristics as a function of temperature and input charge conditions; and a cryogenic semiconducting interconnect circuit, adapted to receive as an input an output signal from the superconducting device, and to provide a semiconductor switching voltage level output signal modulated by the input signal from the superconducting device.

  4. Semiconducting compounds and devices incorporating same

    DOEpatents

    Marks, Tobin J.; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2016-01-19

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  5. Semiconducting compounds and devices incorporating same

    DOEpatents

    Marks, Tobin J; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2014-06-17

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  6. Bulk semiconducting scintillator device for radiation detection

    DOEpatents

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  7. Nonlinear Optical Properties of Semiconducting Polymers

    DTIC Science & Technology

    1990-10-26

    Materials Science and Engineering. Ed. Michael B. Bever (Pergamon Press, Oxford, 1986), p . 1399. 2 -Nonlinear Excitations and Nonlinear Phenomena in...M. Sinclair, A.J. Heeger, A. 0. Patil, S. Shi, S. Askad and F. Wudl, Linear and Nonlinear Optical Studies of Poly( p -phenylene- vinylene) Derivatives... P . Smith, ICSM 󈨜, Santa Fe, NM (June 1988) P . Smith, Organized ACS Symposium on Processing of Conducting Polymers, ACS Meeting, Dallas (April, 1989

  8. Semiconducting polymer single crystals and devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dong, Huanli

    2016-11-01

    Highly ordered organic semiconductors in solid state with optimal molecular packing are critical to their electrical performance. Single crystals with long-range molecular orders and nearly perfect molecular packing are the best candidates, which already have been verified to exhibit the highest performance whether based on inorganic or small organic materials. However, in comparison, preparing high quality polymer crystals remains a big challenge in polymer science because of the easy entanglements of the long and flexible polymer chains during self-assembly process, which also significantly limits the development of their crystalline polymeric electronic devices. Here we have carried out systematical investigations to prepare high quality semiconducting polymers and high performance semiconducting polymer crystal optoelectronic devices have been successfully fabricated. The semiconducting polymeric devices demonstrate significantly enhanced charge carreir transport compared to their thin films, and the highest carreir mobiltiy could be approcahing 30 cm2 V-1s-1, one of the highest mobiltiy values for polymer semiconductors.

  9. Logic circuits based on individual semiconducting and metallic carbon-nanotube devices.

    PubMed

    Ryu, Hyeyeon; Kälblein, Daniel; Weitz, R Thomas; Ante, Frederik; Zschieschang, Ute; Kern, Klaus; Schmidt, Oliver G; Klauk, Hagen

    2010-11-26

    Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are typically not utilized. However, integrated circuits often require not only transistors, but also resistive load devices. Here we show that many of the metallic carbon nanotubes that are deposited on the substrate along with the semiconducting nanotubes can be conveniently utilized as load resistors with favorable characteristics for the design of integrated circuits. We also demonstrate the fabrication of arrays of transistors and resistors, each based on an individual semiconducting or metallic carbon nanotube, and their integration on glass substrates into logic circuits with switching frequencies of up to 500 kHz using a custom-designed metal interconnect layer.

  10. Semiconducting ferroelectric SbSI quantum dots in amorphous matrix: preparation and nonlinear optical properties

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yang, Ligong; Gu, Peifu

    2002-09-01

    Semiconducting ferroelectric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin films were successfully fabricated with the sol-gel process. Ferroelectric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow eneryg gap. The Bohr radius of the SbSI crystal was calculated larger than other semiconductors due to its large dielectric constant. If the crystal size is smaller than its Bohr radius and the microcrystallite are dispersed in a suitable matrix, a dramatic improvement of the nonlinear three-order nonlinearity will be achieved due to the quantum confinement effect. The SbSI quantum dot composites were proved to be good candidates for nonlinear and electro-optical devices. Glycidopropyltrimetroxysilane modified TiO2 was chosen as the matrix and SbSI was synthesized in situ by using SbI3, SC(NH2)2. The materials in thin film were heat-treated in different conditions and the size of the microcrystallite was characterized by the XRD. A value of 3.5pm/V of effective transverse electro-optical coefficient reff for the nano-composite containing 8 wt percent of antimony sulfide iodide was measured. The third-order nonlinear optical susceptibility of the SbSI quantum dot thin film was measured by degenerate four-wave mixing at 532nm using a frequency double Nd:YAG laser beams with a pulse width of around 10ns, the x(3) value of 3 μm sample was measured to be 6 × 10-11 esu.

  11. Exciton Dynamics and Many Body Interactions in Layered Semiconducting Materials Revealed with Non-linear Coherent Spectroscopy

    NASA Astrophysics Data System (ADS)

    Dey, Prasenjit

    Atomically thin, semiconducting transition metal dichalogenides (TMDs), a special class of layered semiconductors, that can be shaped as a perfect two dimensional material, have garnered a lot of attention owing to their fascinating electronic properties which are achievable at the extreme nanoscale. In contrast to graphene, the most celebrated two-dimensional (2D) material thus far; TMDs exhibit a direct band gap in the monolayer regime. The presence of a non-zero bandgap along with the broken inversion symmetry in the monolayer limit brands semiconducting TMDs as the perfect candidate for future optoelectronic and valleytronics-based device application. These remarkable discoveries demand exploration of different materials that possess similar properties alike TMDs. Recently, III-VI layered semiconducting materials (example: InSe, GaSe etc.) have also emerged as potential materials for optical device based applications as, similar to TMDs, they can be shaped into a perfect two-dimensional form as well as possess a sizable band gap in their nano-regime. The perfect 2D character in layered materials cause enhancement of strong Coulomb interaction. As a result, excitons, a coulomb bound quasiparticle made of electron-hole pair, dominate the optical properties near the bandgap. The basis of development for future optoelectronic-based devices requires accurate characterization of the essential properties of excitons. Two fundamental parameters that characterize the quantum dynamics of excitons are: a) the dephasing rate, gamma, which represents the coherence loss due to the interaction of the excitons with their environment (for example- phonons, impurities, other excitons, etc.) and b) excited state population decay rate arising from radiative and non-radiative relaxation processes. The dephasing rate is representative of the time scale over which excitons can be coherently manipulated, therefore accurately probing the source of exciton decoherence is crucial for

  12. Organic Semiconducting Thin Films: Device Applications and Beyond

    NASA Astrophysics Data System (ADS)

    Stemer, Dominik

    Organic semiconductors show great promise for device applications, particularly as organic thin film transistors (OTFTs) and organic photovoltaics (OPVs), due to their potential for low cost, high volume fabrication when compared to traditional inorganic semiconductors. While the performance of organic devices generally lags behind the more established inorganic devices, significant growth in the field of organic semiconductors has led to rapid improvements. In this thesis, device operation and characterization of OTFT and OPV systems are explained, the dramatic effects of fabrication procedures on the charge transport performance of OTFTs are demonstrated, and the reproducibility issues inherent to OPVs are explored. The potential for self-healing behavior in organic semiconductors is also investigated.

  13. Diphenylpolyynes For Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Stiegman, Albert E.; Perry, Joseph W.; Coulter, Daniel R.

    1989-01-01

    Several diphenylpolyyne compounds found to exhibit second-order nonlinear electric susceptibilities and chemical structures conducive to orientation in appropriate chemical environments. These features make new materials suitable for use in optical devices. Diphenylacetylene links give molecules rodlike characteristics making them amenable to orientation by suspension in liquid crystals. New molecules also have inherent liquid-crystalline properties enabling them to be oriented directly.

  14. High-Field Transport in Semiconducting Material and Devices.

    NASA Astrophysics Data System (ADS)

    Ahmad, Nisar

    1990-01-01

    Available from UMI in association with The British Library. Considering the developments and most recent technological innovations of semiconductor devices, it is important to investigate the ramifications of charge carrier transport in high electric field in modern semiconductor microstructures, where the electric fields are found to be necessarily high. The fundamental ideas of transport theory including the mobility -limiting scattering mechanisms are reviewed. The ideas of linear transport are extended and the derivation of the high-field distribution is described in a single-valley model appropriate for the band structures of silicon and germanium. The velocity-field profile obtained from this distribution function is compared with the experimental results on bulk (3-dimensional) samples of silicon and germanium. The two-band model of intrinsic transport in a high electric field is also included. The single valley distribution is applied to the multi-valley structures of CaAs and (InGa)As to explain the experimentally observed negative differential resistivity in bulk samples. The calculations are further extended to two dimensional quantum -well microstructures of GaAs and (InGa)As. The conditions necessary for negative differential resistivity in these microstructures to be observable is also discussed. The applications of the above ideas in modelling submicron -length channel field effect transistors (MOSFET's and MODFET's) is discussed. Suggestions for further future applications of the analysis are offered.

  15. Formation of single-walled carbon nanotube thin films enriched with semiconducting nanotubes and their application in photoelectrochemical devices.

    PubMed

    Wei, Li; Tezuka, Noriyasu; Umeyama, Tomokazu; Imahori, Hiroshi; Chen, Yuan

    2011-04-01

    Single-walled carbon nanotube (SWCNT) thin films, containing a high-density of semiconducting nanotubes, were obtained by a gel-centrifugation method. The agarose gel concentration and centrifugation force were optimized to achieve high semiconducting and metallic nanotube separation efficiency at 0.1 wt% agarose gel and 18,000g. The thickness of SWCNT films can be precisely controlled from 65 to 260 nm with adjustable transparency. These SWCNT films were applied in photoelectrochemical devices. Photocurrents generated by semiconducting SWCNT enriched films are 15-35% higher than those by unsorted SWCNT films. This is because of reducing exciton recombination channels as a result of the removal of metallic nanotubes. Thinner films generate higher photocurrents because charge carriers have less chances going in metallic nanotubes for recombination, before they can reach electrodes. Developing more scalable and selective methods for high purity semiconducting SWCNTs is important to further improve the photocurrent generation efficiency by using SWCNT-based photoelectrochemical devices.

  16. Solution-processable SWNT transistors: Toward high performance and full semiconducting device yield

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Lee, Chun Wei; Zhao, Jianwen; Li, Lain-Jong

    2010-03-01

    The major hurdle to scale up SWNT network field-effect transistors (FETs) is the difficulty in obtaining high mobility and full semiconductor device yield due to the co-existence of metallic and semiconducting tubes in fabricated networks. We demonstrate that the radical initiator 1,1'-azobis(cyanocyclohexane) (ACN) allows for release of radicals which preferentially react with small and metallic SWNTs. By applying this reaction to CoMoCat SWNTs, metallic tubes are electrically suppressed and semiconducting thin-film transistors can be readily made with almost full semiconductor device yield. The effective mobility can be raised to ˜10 cm2/V.s with increasing the network thickness to ˜20 nm while keeping the on-off ratio higher than 10000. Moreover, top-gated devices with polymer-ionic liquid mixture as the dielectrics are demonstrated to be almost hysteresis-free and with low threshold voltage, promising applications in low-cost printable electronics.

  17. Linear and Nonlinear Rheology Combined with Dielectric Spectroscopy of Hybrid Polymer Nanocomposites for Semiconductive Applications.

    PubMed

    Kádár, Roland; Abbasi, Mahdi; Figuli, Roxana; Rigdahl, Mikael; Wilhelm, Manfred

    2017-01-24

    The linear and nonlinear oscillatory shear, extensional and combined rheology-dielectric spectroscopy of hybrid polymer nanocomposites for semiconductive applications were investigated in this study. The main focus was the influence of processing conditions on percolated poly(ethylene-butyl acrylate) (EBA) nanocomposite hybrids containing graphite nanoplatelets (GnP) and carbon black (CB). The rheological response of the samples was interpreted in terms of dispersion properties, filler distortion from processing, filler percolation, as well as the filler orientation and distribution dynamics inside the matrix. Evidence of the influence of dispersion properties was found in linear viscoelastic dynamic frequency sweeps, while the percolation of the nanocomposites was detected in nonlinearities developed in dynamic strain sweeps. Using extensional rheology, hybrid samples with better dispersion properties lead to a more pronounced strain hardening behavior, while samples with a higher volume percentage of fillers caused a drastic reduction in strain hardening. The rheo-dielectric time-dependent response showed that in the case of nanocomposites containing only GnP, the orientation dynamics leads to non-conductive samples. However, in the case of hybrids, the orientation of the GnP could be offset by the dispersing of the CB to bridge the nanoplatelets. The results were interpreted in the framework of a dual PE-BA model, where the fillers would be concentrated mainly in the BA regions. Furthermore, better dispersed hybrids obtained using mixing screws at the expense of filler distortion via extrusion processing history were emphasized through the rheo-dielectric tests.

  18. Linear and Nonlinear Rheology Combined with Dielectric Spectroscopy of Hybrid Polymer Nanocomposites for Semiconductive Applications

    PubMed Central

    Kádár, Roland; Abbasi, Mahdi; Figuli, Roxana; Rigdahl, Mikael; Wilhelm, Manfred

    2017-01-01

    The linear and nonlinear oscillatory shear, extensional and combined rheology-dielectric spectroscopy of hybrid polymer nanocomposites for semiconductive applications were investigated in this study. The main focus was the influence of processing conditions on percolated poly(ethylene-butyl acrylate) (EBA) nanocomposite hybrids containing graphite nanoplatelets (GnP) and carbon black (CB). The rheological response of the samples was interpreted in terms of dispersion properties, filler distortion from processing, filler percolation, as well as the filler orientation and distribution dynamics inside the matrix. Evidence of the influence of dispersion properties was found in linear viscoelastic dynamic frequency sweeps, while the percolation of the nanocomposites was detected in nonlinearities developed in dynamic strain sweeps. Using extensional rheology, hybrid samples with better dispersion properties lead to a more pronounced strain hardening behavior, while samples with a higher volume percentage of fillers caused a drastic reduction in strain hardening. The rheo-dielectric time-dependent response showed that in the case of nanocomposites containing only GnP, the orientation dynamics leads to non-conductive samples. However, in the case of hybrids, the orientation of the GnP could be offset by the dispersing of the CB to bridge the nanoplatelets. The results were interpreted in the framework of a dual PE-BA model, where the fillers would be concentrated mainly in the BA regions. Furthermore, better dispersed hybrids obtained using mixing screws at the expense of filler distortion via extrusion processing history were emphasized through the rheo-dielectric tests. PMID:28336857

  19. Strain compensation in a semiconducting device structure using an intentionally mismatched uniform buffer layer

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-12-01

    The extent of strain relaxation in semiconducting device heterostructures has important implications in the design of high electron mobility transistors, light-emitting diodes, and laser diodes, in which the residual strain affects the device characteristics. In this work, we develop the theoretical framework for understanding strain compensation in a semiconductor device layer using a uniform buffer layer which can be intentionally mismatched to the material above. Specifically, we determined the critical condition for complete strain compensation in the device layer by intentionally introducing a compositional mismatch at the device-buffer interface. We present minimum energy calculations and show that for a given device layer with fixed mismatch and layer thickness, the buffer layer may be designed with the appropriate combination of thickness and mismatch such that the device layer will have zero residual strain in equilibrium. Such a structure can be referred to as a completely strain-compensated design. In the more general case, there may be partial strain compensation, and we give a simple physics-based Gaussian-type function describing the residual strain in the device layer. We have applied this general framework to In x Ga1-x As/GaAs (001) heterostructures for the purpose of illustration, but the work is applicable to any diamond or zinc blende (001) heteroepitaxial material system.

  20. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  1. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices

    NASA Astrophysics Data System (ADS)

    Ma, Yuqiang; Liu, Bilu; Zhang, Anyi; Chen, Liang; Fathi, Mohammad; Shen, Chenfei; Abbas, Ahmad; Ge, Mingyuan; Mecklenburg, Matthew; Zhou, Chongwu; Usc Nanolab Team

    Two-dimensional (2D) semiconducting monolayer transition metal dichalcogenides (TMDCs) have stimulated lots of interest because they are direct bandgap materials that have reasonably good mobility values. However, contact between most metals and semiconducting TMDCs like 2H phase WSe2 is highly resistive, thus degrading the performance of field effect transistors (FETs) fabricated with WSe2 as active channel materials. We applied a phase engineering method to chemical vapor deposition (CVD) grown monolayer 2H-WSe2 and demonstrated semiconducting-to-metallic phase transition in atomically thin WSe2. We have also shown that metallic phase WSe2 can be converted back to semiconducting phase, demonstrating the reversibility of this phase transition. In addition, we fabricated FETs based on these CVD-grown WSe2 flakes with phase-engineered metallic 1T-WSe2 as contact regions and intact semiconducting 2H-WSe2 as active channel materials. The device performance is substantially improved with metallic phase source/drain electrodes, showing on/off current ratios of 107 and mobilities up to 66 cm2/Vs for monolayer WSe2. PI name: Chongwu Zhou.

  2. Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

    NASA Astrophysics Data System (ADS)

    Acharyya, Aritra; Banerjee, Suranjana; Banerjee, J. P.

    2014-03-01

    An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region (DDR) impact avalanche transit time (IMPATT) devices operating at both millimetre-wave (mm-wave) and terahertz (THz) frequencies. A rigorous large-signal (L-S) simulation based on the non-sinusoidal voltage excitation (NSVE) model developed earlier by the authors is used in this study. At first, a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulation results show that the DDR diamond IMPATT device delivers a peak RF power of 7.79 W with an 18.17% conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to 6.19 mW and 8.17% respectively, taking 50% voltage modulation. A comparative study of DDR IMPATTs based on diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.

  3. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    PubMed

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

  4. Vacuum filtration based formation of liquid crystal films of semiconducting carbon nanotubes and high performance transistor devices

    NASA Astrophysics Data System (ADS)

    King, Benjamin; Panchapakesan, Balaji

    2014-05-01

    In this paper, we report ultra-thin liquid crystal films of semiconducting carbon nanotubes using a simple vacuum filtration process. Vacuum filtration of nanotubes in aqueous surfactant solution formed nematic domains on the filter membrane surface and exhibited local ordering. A 2D fast Fourier transform was used to calculate the order parameters from scanning electron microscopy images. The order parameter was observed to be sensitive to the filtration time demonstrating different regions of transformation namely nucleation of nematic domains, nanotube accumulation and large domain growth.Transmittance versus sheet resistance measurements of such films resulted in optical to dc conductivity of σ opt/σ dc = 9.01 indicative of purely semiconducting nanotube liquid crystal network.Thin films of nanotube liquid crystals with order parameters ranging from S = 0.1-0.5 were patterned into conducting channels of transistor devices which showed high I on/I off ratios from 10-19 800 and electron mobility values μ e = 0.3-78.8 cm2 (V-s)-1, hole mobility values μ h = 0.4-287 cm2 (V-s)-1. High I on/I off ratios were observed at low order parameters and film mass. A Schottky barrier transistor model is consistent with the observed transistor characteristics. Electron and hole mobilities were seen to increase with order parameters and carbon nanotube mass fractions. A fundamental tradeoff between decreasing on/off ratio and increasing mobility with increasing nanotube film mass and order parameter is therefore concluded. Increase in order parameters of nanotubes liquid crystals improved the electronic transport properties as witnessed by the increase in σ dc/σ opt values on macroscopic films and high mobilities in microscopic transistors. Liquid crystal networks of semiconducting nanotubes as demonstrated here are simple to fabricate, transparent, scalable and could find wide ranging device applications.

  5. Nonlinear Ballistic Transport in Graphene Devices

    NASA Astrophysics Data System (ADS)

    Farrokhi, M. Javad; Boland, Mathias; Nasseri, Mohsen; Strachan, Douglas

    Through the extreme size scaling of electronic devices, there is great potential to achieve highly efficient and ultrafast electronics. By scaling down the channel length in graphene transistors to the point where the mean free path exceeds the relevant channel length, the electron transport can transition from a diffusive regime to an intrinsic ballistic regime. In such a regime, both quantum tunneling at the electrode-channel interface and the screening length, as determined by electrode-channel barrier width, can have a strong effect on current nonlinearity and asymmetric gate response. Here we discuss our experimental results on nangap electrodes to graphene channels that show quantitative agreement with an intrinsic ballistic model. Moreover, this behavior persists to room temperature and on standard oxide substrates, providing strong evidence for a new regime of nonlinearity in graphene devices that could be of potential use for electronic applications.

  6. Non-Linear Electrohydrodynamics in Microfluidic Devices

    PubMed Central

    Zeng, Jun

    2011-01-01

    Since the inception of microfluidics, the electric force has been exploited as one of the leading mechanisms for driving and controlling the movement of the operating fluid and the charged suspensions. Electric force has an intrinsic advantage in miniaturized devices. Because the electrodes are placed over a small distance, from sub-millimeter to a few microns, a very high electric field is easy to obtain. The electric force can be highly localized as its strength rapidly decays away from the peak. This makes the electric force an ideal candidate for precise spatial control. The geometry and placement of the electrodes can be used to design electric fields of varying distributions, which can be readily realized by Micro-Electro-Mechanical Systems (MEMS) fabrication methods. In this paper, we examine several electrically driven liquid handling operations. The emphasis is given to non-linear electrohydrodynamic effects. We discuss the theoretical treatment and related numerical methods. Modeling and simulations are used to unveil the associated electrohydrodynamic phenomena. The modeling based investigation is interwoven with examples of microfluidic devices to illustrate the applications. PMID:21673912

  7. Final Report for DE-FG36-08GO18007 "All-Inorganic, Efficient Photovoltaic Solid State Devices Utilizing Semiconducting Colloidal Nanocrystal Quantum Dots"

    SciTech Connect

    Vladimir Bulovic and Moungi Bawendi

    2011-09-30

    We demonstrated robust colloidal quantum dot (QD) photovoltaics with high internal quantum efficiencies. In our structures, device durability is derived from use of all-inorganic atmospherically-stable semiconducting metal-oxide films together with QD photoreceptors. We have shown that both QD and metal-oxide semiconducting films and contacts are amenable to room temperature processing under minimal vacuum conditions, enabling large area processing of PV structures of high internal efficiency. We generated the state of the art devices with power conversion efficiency of more than 4%, and have shown that efficiencies as high as 9% are achievable in the near-term, and as high as 17% in the long-term.

  8. Probing the degradation and homogeneity of embedded perovskite semiconducting layers in photovoltaic devices by Raman spectroscopy.

    PubMed

    Hooper, K E A; Lee, H K H; Newman, M J; Meroni, S; Baker, J; Watson, T M; Tsoi, W C

    2017-02-15

    The key challenges for perovskite solar cells include their poor stability and film homogeneity. Studying the degradation and homogeneity of perovskite layers within device structures can be challenging but critical to the understanding of stability and effect of processing in real life conditions. We show that Raman spectroscopy (RS) is a unique and powerful method (simple and fast) to probe the degradation of the perovskite film within the device structure and image perovskite formation. We demonstrate that RS can be used to directly probe chemical (PbI2) and physical (dihydrated phase) degradation of a perovskite film, and estimate the relative amount of the degradation species formed, mapping its distribution with ∼1 μm spatial resolution. This has been applied to mapping a large area perovskite module to characterise the efficacy of PbI2 to perovskite conversion. We also use RS to study the degradation species and kinetics under diverse accelerated degradation conditions (temperature and humidity) in situ. These capabilities are difficult to achieve with other methods, presenting RS as an important tool to gain understanding of the degradation and effect of processing on perovskite-based photovoltaic devices.

  9. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    DTIC Science & Technology

    2007-03-01

    nanocrystals……………………………………… 7 ZnSe and ZnS nanowires and nanorods, ZnO…………..……………………………… 9 Conjugated polymers in nanostructured composite materials...treatments and nanocrystal size. Compared to nanocrystalline Group II-VI compounds CdSe and CdS, Group III-V semiconductors, such as InP, GaP, InN, or...molecular level are being used to facilitate their integration into host matrices and devices. ZnSe and ZnS nanowires and nanorods, ZnO

  10. Current-voltage characteristics of Weyl semimetal semiconducting devices, Veselago lenses, and hyperbolic Dirac phase

    NASA Astrophysics Data System (ADS)

    Hills, R. D. Y.; Kusmartseva, A.; Kusmartsev, F. V.

    2017-06-01

    The current-voltage characteristics of a new range of devices built around Weyl semimetals has been predicted using the Landauer formalism. The potential step and barrier have been reconsidered for three-dimensional Weyl semimetals, with analogies to the two-dimensional material graphene and to optics. With the use of our results we also show how a Veselago lens can be made from Weyl semimetals, e.g., from NbAs and NbP. Such a lens may have many practical applications and can be used as a probing tip in a scanning tunneling microscope (STM). The ballistic character of Weyl fermion transport inside the semimetal tip, combined with the ideal focusing of the Weyl fermions (by Veselago lens) on the surface of the tip may create a very narrow electron beam from the tip to the surface of the studied material. With a Weyl semimetal probing tip the resolution of the present STMs can be improved significantly, and one may image not only individual atoms but also individual electron orbitals or chemical bonding and therewith to resolve the long-term issue of chemical and hydrogen bond formation. We show that applying a pressure to the Weyl semimental, having no center of spatial inversion, one may model matter at extreme conditions, such as those arising in the vicinity of a black hole. As the materials Cd3As2 and Na3Bi show an asymmetry in their Dirac cones, a scaling factor was used to model this asymmetry. The scaling factor created additional regions of no propagation and condensed the appearance of resonances. We argue that under an external pressure there may arise a topological phase transition in Weyl semimetals, where the electron transport changes character and becomes anisotropic. There a hyperbolic Dirac phase occurs where there is a strong light absorption and photocurrent generation.

  11. PREFACE: Semiconducting oxides Semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

  12. Nonlinear Characterization of Half and Full Wavelength Power Ultrasonic Devices

    NASA Astrophysics Data System (ADS)

    Mathieson, Andrew; Cerisola, Niccolò; Cardoni, Andrea

    It is well known that power ultrasonic devices whilst driven under elevated excitation levels exhibit nonlinear behaviors. If no attempt is made to understand and subsequently control these behaviors, these devices can exhibit poor performance or even suffer premature failure. This paper presents an experimental method for the dynamic characterization of a commercial ultrasonic transducer for bone cutting applications (Piezosurgery® Device) operated together with a variety of rod horns that are tuned to operate in a longitudinal mode of vibration. Near resonance responses, excited via a burst sine sweep method were used to identify nonlinear responses exhibited by the devices, while experimental modal analysis was performed to identify the modal parameters of the longitudinal modes of vibration of the assemblies between 0-80 kHz. This study tries to provide an understanding of the effects that geometry and material choices may have on the nonlinear behavior of a tuned device.

  13. Microwave nonlinear device modelling by using an artificial neural network

    NASA Astrophysics Data System (ADS)

    Li, Xiuping; Gao, Jianjun; Boeck, Georg

    2006-07-01

    An approach for the microwave nonlinear device modelling technique based on a combination of the conventional equivalent circuit model and artificial neural network (ANN) is presented in this paper. The main advantage of the proposed method is that the integration and differential of an ANN can directly be carried out from the original ANN. The proposed technique is very useful for neural-based microwave computer-aided design, and for analytically unified dc, small signal and nonlinear device modelling. Examples of the Schottky diode and PHEMT linear/nonlinear modelling utilizing the proposed integration and differential technique are demonstrated.

  14. Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock.

    PubMed

    Che, Yuchi; Wang, Chuan; Liu, Jia; Liu, Bilu; Lin, Xue; Parker, Jason; Beasley, Cara; Wong, H-S Philip; Zhou, Chongwu

    2012-08-28

    The development of guided chemical vapor deposition (CVD) growth of single-walled carbon nanotubes provides a great platform for wafer-scale integration of aligned nanotubes into circuits and functional electronic systems. However, the coexistence of metallic and semiconducting nanotubes is still a major obstacle for the development of carbon-nanotube-based nanoelectronics. To address this problem, we have developed a method to obtain predominantly semiconducting nanotubes from direct CVD growth. By using isopropyl alcohol (IPA) as the carbon feedstock, a semiconducting nanotube purity of above 90% is achieved, which is unambiguously confirmed by both electrical and micro-Raman measurements. Mass spectrometric study was performed to elucidate the underlying chemical mechanism. Furthermore, high performance thin-film transistors with an on/off ratio above 10(4) and mobility up to 116 cm(2)/(V·s) have been achieved using the IPA-synthesized nanotube networks grown on silicon substrate. The method reported in this contribution is easy to operate and the results are highly reproducible. Therefore, such semiconducting predominated single-walled carbon nanotubes could serve as an important building block for future practical and scalable carbon nanotube electronics.

  15. Nonlinear Thermal Effects in Ballistic Electron Devices

    DTIC Science & Technology

    2013-03-01

    characterization of the device. In other words, we now understand this system sufficiently well that we can predict its response to a thermal bias from...direction of the heat backflow, could have significantly enhanced performance. To date, thermal rectification has been demonstrated at some heterostructure ...gas (2DEG) devices embedded in InGaAs/InP heterostructure wafers. These heterostructures are grown on the surface of InP wafers at Lund University

  16. Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

    PubMed Central

    Zhang, Wen-Ming; Meng, Guang; Chen, Di

    2007-01-01

    Electrostatic micro-electro-mechanical system (MEMS) is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

  17. Elastic and nonlinear response of nanomechanical graphene devices

    NASA Astrophysics Data System (ADS)

    Annamalai, M.; Mathew, S.; Jamali, M.; Zhan, D.; Palaniapan, M.

    2012-10-01

    In this paper, a simple and effective experimental approach has been used to extract the mechanical properties of suspended nanomechanical graphene devices using atomic force microscopy (AFM). The main objective of this work is to study the deflection behaviour of graphene devices as a function of layer number (1-5 layers) and anchor geometry which has not been widely investigated so far. Elastic and nonlinear responses of the devices were obtained using AFM nanoindentation. The estimated linear (2.5 N m-1 to 7.3 N m-1), nonlinear spring constants (1 × 1014 N m-3 to 15 × 1014 N m-3) and pretension (0.79 N m-1 to 2.3 N m-1) for the monolayer (3.35 Å) to five layer (16.75 Å) graphene devices of diameter 3.8 µm show an obvious increasing trend with increase in graphene thickness. The effect of anchor geometry on the force versus deflection behaviour of these devices has also been investigated. The Raman spectroscopy results confirm the absence of defects in the pristine and indented devices. Using the continuum mechanics model, the Young's modulus and 2D elastic modulus of a monolayer graphene device have been found to be 1.12 TPa and 375 N m-1 respectively. The high stiffness and low mass of these devices make them well suited for sensing applications.

  18. Optimization of the bulk heterojunction composition for enhanced photovoltaic properties: correlation between the molecular weight of the semiconducting polymer and device performance.

    PubMed

    Nicolet, Célia; Deribew, Dargie; Renaud, Cedric; Fleury, Guillaume; Brochon, Cyril; Cloutet, Eric; Vignau, Laurence; Wantz, Guillaume; Cramail, Henri; Geoghegan, Mark; Hadziioannou, Georges

    2011-11-10

    Herein we propose an approach toward the optimization of the photovoltaic performance of bulk heterojunctions by tuning the composition of the active layer with respect to the molecular weight of the semiconducting polymer. We used a poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) blend as a typical system and varied the molecular weight of the P3HT semiconducting polymer in order to determine its influence on the bulk heterojunction morphology as well as on the optoelectronic characteristics of the device. We have systematically mapped out the phase diagram for different molecular weight P3HTs blended with PCBM and observed the presence of a eutectic composition, which shifts to higher content of P3HT for lower molecular weight P3HTs. This shift inherent to the P3HT molecular weight is also apparent in the photovoltaic performance as the eutectic composition corresponds to the best of the photovoltaic properties. The P3HT molecular weight dependence of the eutectic composition is due to the molecular weight dependence of the P3HT crystallization behavior, which leads to dramatic morphological changes of the bulk heterojunction.

  19. Nonlinear optimization of acoustic energy harvesting using piezoelectric devices.

    PubMed

    Lallart, Mickaeël; Guyomar, Daniel; Richard, Claude; Petit, Lionel

    2010-11-01

    In the first part of the paper, a single degree-of-freedom model of a vibrating membrane with piezoelectric inserts is introduced and is initially applied to the case when a plane wave is incident with frequency close to one of the resonance frequencies. The model is a prototype of a device which converts ambient acoustical energy to electrical energy with the use of piezoelectric devices. The paper then proposes an enhancement of the energy harvesting process using a nonlinear processing of the output voltage of piezoelectric actuators, and suggests that this improves the energy conversion and reduces the sensitivity to frequency drifts. A theoretical discussion is given for the electrical power that can be expected making use of various models. This and supporting experimental results suggest that a nonlinear optimization approach allows a gain of up to 10 in harvested energy and a doubling of the bandwidth. A model is introduced in the latter part of the paper for predicting the behavior of the energy-harvesting device with changes in acoustic frequency, this model taking into account the damping effect and the frequency changes introduced by the nonlinear processes in the device.

  20. Semiconducting polymers: the Third Generation.

    PubMed

    Heeger, Alan J

    2010-07-01

    There has been remarkable progress in the science and technology of semiconducting polymers during the past decade. The field has evolved from the early work on polyacetylene (the First Generation material) to a proper focus on soluble and processible polymers and co-polymers. The soluble poly(alkylthiophenes) and the soluble PPVs are perhaps the most important examples of the Second Generation of semiconducting polymers. Third Generation semiconducting polymers have more complex molecular structures with more atoms in the repeat unit. Important examples include the highly ordered and crystalline PDTTT and the ever-growing class of donor-acceptor co-polymers that has emerged in the past few years. Examples of the latter include the bithiophene-acceptor co-polymers pioneered by Konarka and the polycarbazole-acceptor co-polymers pioneered by Leclerc and colleagues. In this tutorial review, I will summarize progress in the basic physics, the materials science, the device science and the device performance with emphasis on the following recent studies of Third Generation semiconducting polymers: stable semiconducting polymers; self-assembly of bulk heterojunction (BHJ) materials by spontaneous phase separation; bulk heterojunction solar cells with internal quantum efficiency approaching 100%; high detectivity photodetectors fabricated from BHJ materials.

  1. Carbon Nanotube Passive Intermodulation Device for Nonlinear Energy Harvesting

    NASA Astrophysics Data System (ADS)

    Lerner, Mitchell; Perez, Israel; Rockway, John

    2014-03-01

    The navy is interested in designing RF front-ends for receivers to handle high power jammers and other strong interferers. Instead of blocking that energy or dissipating it as heat in filters or amplifiers, this project investigates re-directing that energy for harvesting and storage. The approach is based on channelizing a high power jamming signal into a passive intermodulation device to create intermodulation products in sub-band frequencies, which could then be harvested for energy. The intermodulation device is fabricated using carbon nanotube transistors and such devices can be modified by creating chemical defects in the sidewalls of the nanotubes and locally gating the devices with a slowly varying electric field. These effects controllably enhance the hysteretic non-linearity in the transistors IV behavior. Combining these components with a RF energy harvester on the back-end should optimize the re-use of inbound jamming energy while maximizing the utility of standard back end radio components.

  2. An Ultrasonic Caliper Device for Measuring Acoustic Nonlinearity

    NASA Astrophysics Data System (ADS)

    Hunter, Christopher; Sapozhnikov, Oleg A.; Maxwell, Adam D.; Khokhlova, Vera A.; Wang, Yak-Nam; MacConaghy, Brian; Kreider, Wayne

    In medical and industrial ultrasound, it is often necessary to measure the acoustic properties of a material. A specific medical application requires measurements of sound speed, attenuation, and nonlinearity to characterize livers being evaluated for transplantation. For this application, a transmission-mode caliper device is proposed in which both transmit and receive transducers are directly coupled to a test sample, the propagation distance is measured with an indicator gage, and receive waveforms are recorded for analysis. In this configuration, accurate measurements of nonlinearity present particular challenges: diffraction effects can be considerable while nonlinear distortions over short distances typically remain small. To enable simple estimates of the nonlinearity coeffcient from a quasi-linear approximation to the lossless Burgers' equation, the calipers utilize a large transmitter and plane waves are measured at distances of 15-50 mm. Waves at 667 kHz and pressures between 0.1 and 1 MPa were generated and measured in water at different distances; the nonlinearity coeffcient of water was estimated from these measurements with a variability of approximately 10%. Ongoing efforts seek to test caliper performance in other media and improve accuracy via additional transducer calibrations.

  3. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices.

  4. Network analysis of semiconducting Zn1-xCdxS based photosensitive device using impedance spectroscopy and current-voltage measurement

    NASA Astrophysics Data System (ADS)

    Datta, Joydeep; Das, Mrinmay; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim

    2017-10-01

    ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m2 V-1 s-1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.

  5. Semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Hermann, A. M.

    A review is presented of the electrical properties of those polymers whose conductivities occupy the middle ground between polymeric insulators and polymeric superconductors. Attention is confined to polymers in which conduction occurs through electronic, rather than ionic, transport. Four classes of semiconductors are discussed: (1) highly-conjugated polymers, including those formed by pyrolysis; (2) polymeric charge-transfer complexes and radical-ion salts; (3) organometallic polymeric semiconductors; and (4) composite polymer systems containing carbon or other highly conducting media. The possible applications discussed include cathodes in solid-state metal/halogen primary batteries, cathodes in lithium/poly-p-phenylene or polyacetylene secondary batteries, conductive coatings and epoxies, and chemical sensing agents. Other applications are Peltier cooling devices, pressure transducers, photovoltaic devices, infrared radiation detectors, and switches and resistors.

  6. Luminescent Organic Semiconducting Langmuir Monolayers.

    PubMed

    Agina, Elena V; Mannanov, Artur A; Sizov, Alexey S; Vechter, Olga; Borshchev, Oleg V; Bakirov, Artem V; Shcherbina, Maxim A; Chvalun, Sergei N; Konstantinov, Vladislav G; Bruevich, Vladimir V; Kozlov, Oleg V; Pshenichnikov, Maxim S; Paraschuk, Dmitry Yu; Ponomarenko, Sergei A

    2017-05-31

    In recent years, monolayer organic field-effect devices such as transistors and sensors have demonstrated their high potential. In contrast, monolayer electroluminescent organic field-effect devices are still in their infancy. One of the key challenges here is to create an organic material that self-organizes in a monolayer and combines efficient charge transport with luminescence. Herein, we report a novel organosilicon derivative of oligothiophene-phenylene dimer D2-Und-PTTP-TMS (D2, tetramethyldisiloxane; Und, undecylenic spacer; P, 1,4-phenylene; T, 2,5-thiophene; TMS, trimethylsilyl) that meets these requirements. The self-assembled Langmuir monolayers of the dimer were investigated by steady-state and time-resolved photoluminescence spectroscopy, atomic force microscopy, X-ray reflectometry, and grazing-incidence X-ray diffraction, and their semiconducting properties were evaluated in organic field-effect transistors. We found that the best uniform, fully covered, highly ordered monolayers were semiconducting. Thus, the ordered two-dimensional (2D) packing of conjugated organic molecules in the semiconducting Langmuir monolayer is compatible with its high-yield luminescence, so that 2D molecular aggregation per se does not preclude highly luminescent properties. Our findings pave the way to the rational design of functional materials for monolayer organic light-emitting transistors and other optoelectronic devices.

  7. Non-linear optical crystal vibration sensing device

    DOEpatents

    Kalibjian, R.

    1994-08-09

    A non-linear optical crystal vibration sensing device including a photorefractive crystal and a laser is disclosed. The laser produces a coherent light beam which is split by a beam splitter into a first laser beam and a second laser beam. After passing through the crystal the first laser beam is counter-propagated back upon itself by a retro-mirror, creating a third laser beam. The laser beams are modulated, due to the mixing effect within the crystal by vibration of the crystal. In the third laser beam, modulation is stable and such modulation is converted by a photodetector into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal. 3 figs.

  8. Non-linear optical crystal vibration sensing device

    DOEpatents

    Kalibjian, Ralph

    1994-01-11

    A non-linear optical crystal vibration sensing device (10) including a photorefractive crystal (26) and a laser (12). The laser (12 ) produces a coherent light beam (14) which is split by a beam splitter (18) into a first laser beam (20) and a second laser beam (22). After passing through the crystal (26) the first laser beam (20) is counter-propagated back upon itself by a retro-mirror (32), creating a third laser beam (30). The laser beams (20, 22, 30) are modulated, due to the mixing effect within the crystal (26) by vibration of the crystal (30). In the third laser beam (30), modulation is stable and such modulation is converted by a photodetector (34) into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal (26).

  9. Nonlinear parametric amplification in a triport nanoelectromechanical device

    NASA Astrophysics Data System (ADS)

    Collin, E.; Moutonet, T.; Heron, J.-S.; Bourgeois, O.; Bunkov, Yu. M.; Godfrin, H.

    2011-08-01

    We report on measurements performed at low temperatures on a nanoelectromechanical system (NEMS) under (capacitive) parametric pumping. The excitations and detection schemes are purely electrical and, in the present experiment, enable the straightforward measurement of forces down to about a femtonewton, for displacements of an angström, using standard room-temperature electronics. We demonstrate that a small (linear) force applied on the device can be amplified up to more than a 100 times, while the system is truly moving. We explore the dynamics up to about 50-nm deflections for cantilevers about 200 nm thick and 3 μm long, oscillating at a frequency of 7 MHz. We present a generic modeling of nonlinear parametric amplification and give analytic theoretical solutions enabling the fit of experimental results. We finally discuss the practical limits of the technique, with a particular application: the measurement of anelastic damping in the metallic coating of the device, with an exceptional resolution of about 0.5%.

  10. Nonlinear and active RF metamaterial applications using embedded devices

    NASA Astrophysics Data System (ADS)

    Katko, Alexander R.; Hawkes, Allen M.; Cummer, Steven A.

    Nonlinear metamaterials have received considerable attention in recent years. The inclusion of nonlinear and active effects in metamaterials expands the possibilities for engineering media with designer properties. We detail our recent efforts to create nonlinear and active metamaterials at RF with useful properties through the inclusion of embedded nonlinear or active elements. We demonstrate some of the possible applications of such nonlinear and active metamaterials experimentally, with properties including saturable absorption, phase conjugation, and power harvesting.

  11. Nonlinear self-consistent theory for crossed-field devices

    NASA Astrophysics Data System (ADS)

    Riyopoulos, S.

    1993-04-01

    A closed, nonlinear set of fluid equations that is based on the electron guiding-center orbits and is generally applicable to the analysis of crossed-field, slow-wave devices, is developed. The equations are used to model the behavior of the crossed-field amplifier. The dielectric response from the spoke charge is self-consistently included. A mean-field approximation is introduced to express the effect of the spoke charge on the rf mode profile. The dielectric modifications are then parametrized by an average amplitude factor Λ^ and an average phase shift ψ^ from the vacuum values. In the synchronous with the rf signal frame of reference the streamlines follow the equipotential surfaces of the transformed fields. In the steady state, the flow is incompressible. A uniform-density, constant-height electron hub feeds the current spokes. The secondary electron production at the cathode is computed self-consistently through the secondary-emission coefficient and the average impact energy. The spoke current is determined by the difference of the E×B drift at the top of the hub from the rf phase velocity. At small space-charge density relative to the Brillouin density, the dielectric corrections enter as a rotation eiψ^ of the complex growth rate relative to the growth without spoke self-fields. The numerical solutions for arbitrary space charge are compared with previous results without spoke-field effects. An increase in the rf gain and in the anode dc current is observed at any given operation point, despite a small drop in the efficiency. It is concluded that the increase in the rf field strength in the anode-cathode space, caused by the spoke self-field, compensates for the detuning effects from the modifications on the rf mode profile. In reentrant devices, the recycling of the space charge further increases the output power and the level of noise generated by the output-input feedback.

  12. Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro-Optic Devices

    DTIC Science & Technology

    1992-01-07

    COVERED 4. TITLE AND SUBTITLE Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro - Optic Devices 5a. CONTRACT NUMBER 5b. GRANT...generators, computational devices and the like. 15. SUBJECT TERMS optical devices, electro - optical devices, optical signal processing...THEREOF IN OPTICAL AND ELECTRO - OPTIC DEVICES [75] Inventors: Le*lie H. Sperling, Bethlehem; Clarence J. Murphy, Stroudsburg; Warren A. Rosen

  13. Surface physics of semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Amato, Michele; Rurali, Riccardo

    2016-02-01

    Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

  14. Growth of semiconducting graphene on palladium.

    PubMed

    Kwon, Soon-Yong; Ciobanu, Cristian V; Petrova, Vania; Shenoy, Vivek B; Bareño, Javier; Gambin, Vincent; Petrov, Ivan; Kodambaka, Suneel

    2009-12-01

    We report in situ scanning tunneling microscopy studies of graphene growth on Pd(111) during ethylene deposition at temperatures between 723 and 1023 K. We observe the formation of monolayer graphene islands, 200-2000 A in size, bounded by Pd surface steps. Surprisingly, the topographic image contrast from graphene islands reverses with tunneling bias, suggesting a semiconducting behavior. Scanning tunneling spectroscopy measurements confirm that the graphene islands are semiconducting, with a band gap of 0.3 +/- 0.1 eV. On the basis of density functional theory calculations, we suggest that the opening of a band gap is due to the strong interaction between graphene and the Pd substrate. Our findings point to the possibility of preparing semiconducting graphene layers for future carbon-based nanoelectronic devices via direct deposition onto strongly interacting substrates.

  15. An experimental nonlinear low dynamic stiffness device for shock isolation

    NASA Astrophysics Data System (ADS)

    Francisco Ledezma-Ramirez, Diego; Ferguson, Neil S.; Brennan, Michael J.; Tang, Bin

    2015-07-01

    The problem of shock generated vibration is very common in practice and difficult to isolate due to the high levels of excitation involved and its transient nature. If not properly isolated it could lead to large transmitted forces and displacements. Typically, classical shock isolation relies on the use of passive stiffness elements to absorb energy by deformation and some damping mechanism to dissipate residual vibration. The approach of using nonlinear stiffness elements is explored in this paper, focusing in providing an isolation system with low dynamic stiffness. The possibilities of using such a configuration for a shock mount are studied experimentally following previous theoretical models. The model studied considers electromagnets and permanent magnets in order to obtain nonlinear stiffness forces using different voltage configurations. It is found that the stiffness nonlinearities could be advantageous in improving shock isolation in terms of absolute displacement and acceleration response when compared with linear elastic elements.

  16. Nonlinear Dissipation Heat Devices in Finite-Time Thermodynamics: An Analysis of the Trade-Off Optimization

    NASA Astrophysics Data System (ADS)

    Lu, Can-can; Bai, Long

    2017-06-01

    The nonlinear dissipation heat devices are proposed by means of generalizing the low-dissipation heat devices to the quadratic order case. The dimensionless formulas of the output (input) power and the efficiency (coefficient of performance) for the nonlinear dissipation heat engines (refrigerators) are derived in terms of characteristic parameters for heat devices and the dimensional analysis. Based on the trade-off criterion, the optimal performance of the nonlinear dissipation heat devices is discussed in depth, and some system-specific properties for the nonlinear dissipation heat devices under the trade-off optimization are also uncovered. Our results may provide practical insight for designing actual heat engines and refrigerators.

  17. TEM-nanoindentation studies of semiconducting structures.

    PubMed

    Le Bourhis, E; Patriarche, G

    2007-01-01

    This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process.

  18. Enhanced Nonlinear Optical Devices Using Artificial Slow-Light Structures

    DTIC Science & Technology

    2010-08-19

    nature is our study of the limitations on the performance of slow light waveguides, both in the linear and nonlinear regimes. This work is based upon...interaction, and others (e.g. resonant-enhanced Mach-Zehnder interferometers, or REMZI) do not. We have also performed studies in the linear regime...optical filter configurations, primarily in terms of their linear response. One of the limitations of this approach is that designs cannot always be

  19. Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    NASA Technical Reports Server (NTRS)

    Wang, Zhong L. (Inventor); Wang, Xudong (Inventor); Song, Jinhui (Inventor); Zhou, Jun (Inventor); He, Jr-Hau (Inventor)

    2011-01-01

    A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.

  20. High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)

    NASA Technical Reports Server (NTRS)

    Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

    2001-01-01

    Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

  1. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices

    NASA Technical Reports Server (NTRS)

    Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

    1999-01-01

    Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

  2. Gratings in nonlinear optical polymers for integrated optical device applications

    NASA Astrophysics Data System (ADS)

    Kardinahl, Thiemo; Franke, Hilmar

    1993-12-01

    The polymer poly(methyl methacrylate) (PMMA) doped with the active photoinitiator dimethoxyphenalacetophenon (DMPA) is a well known material to form permanent gratings by uv-holographie. An additional doping with the photochromic material E-(alpha) (2,5- dimethyl-3-furyl)ethylidene(adamantylidene)succinic anhydride (Aberchrome 670) leads to a one step fabrication of a nonlinear optical grating. After the permanent grating is fixed, the refractive index of the grating can be tuned by a homogenous illumination. The diffraction efficiency of the grating can be tuned because the fulgide Aberchrome 670 undergoes a reversible transition from its bleached to its colored form by homogeneous uv illumination and back again by irradiating the film with a wavelength near the absorption maximum (here (lambda) equals 514.5 nm).

  3. Analytical model for nonlinear piezoelectric energy harvesting devices

    NASA Astrophysics Data System (ADS)

    Neiss, S.; Goldschmidtboeing, F.; Kroener, M.; Woias, P.

    2014-10-01

    In this work we propose analytical expressions for the jump-up and jump-down point of a nonlinear piezoelectric energy harvester. In addition, analytical expressions for the maximum power output at optimal resistive load and the 3 dB-bandwidth are derived. So far, only numerical models have been used to describe the physics of a piezoelectric energy harvester. However, this approach is not suitable to quickly evaluate different geometrical designs or piezoelectric materials in the harvester design process. In addition, the analytical expressions could be used to predict the jump-frequencies of a harvester during operation. In combination with a tuning mechanism, this would allow the design of an efficient control algorithm to ensure that the harvester is always working on the oscillator's high energy attractor.

  4. Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices.

    PubMed

    Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

    2015-04-08

    Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices.

  5. Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices

    PubMed Central

    Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

    2015-01-01

    Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices. PMID:27547081

  6. Electron transporting semiconducting polymers in organic electronics.

    PubMed

    Zhao, Xingang; Zhan, Xiaowei

    2011-07-01

    Significant progress has been achieved in the preparation of semiconducting polymers over the past two decades, and successful commercial devices based on them are slowly beginning to enter the market. However, most of the conjugated polymers are hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or n-type, materials that have lagged behind their p-type counterparts. Organic electron transporting materials are essential for the fabrication of organic p-n junctions, organic photovoltaic cells (OPVs), n-channel organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs) and complementary logic circuits. In this critical review we focus upon recent developments in several classes of electron transporting semiconducting polymers used in OLEDs, OFETs and OPVs, and survey and analyze what is currently known concerning electron transporting semiconductor architecture, electronic structure, and device performance relationships (87 references).

  7. Micro-/nanoscale multi-field coupling in nonlinear photonic devices

    NASA Astrophysics Data System (ADS)

    Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

    2017-08-01

    The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

  8. Growth of bulk single crystals of organic materials for nonlinear optical devices - An overview

    NASA Technical Reports Server (NTRS)

    Penn, Benjamin G.; Cardelino, Beatriz H.; Moore, Craig E.; Shields, Angela W.; Frazier, D. O.

    1991-01-01

    Highly perfect single crystals of nonlinear optical organic materials are required for use in optical devices. An overview of the bulk crystal growth of these materials by melt, vapor, and solution processes is presented. Additionally, methods that may be used to purify starting materials, detect impurities at low levels, screen materials for crystal growth, and process grown crystals are discussed.

  9. Growth of bulk single crystals of organic materials for nonlinear optical devices - An overview

    NASA Technical Reports Server (NTRS)

    Penn, Benjamin G.; Cardelino, Beatriz H.; Moore, Craig E.; Shields, Angela W.; Frazier, D. O.

    1991-01-01

    Highly perfect single crystals of nonlinear optical organic materials are required for use in optical devices. An overview of the bulk crystal growth of these materials by melt, vapor, and solution processes is presented. Additionally, methods that may be used to purify starting materials, detect impurities at low levels, screen materials for crystal growth, and process grown crystals are discussed.

  10. Non-linear control of the ''clam'' wave energy device. Final report

    SciTech Connect

    Not Available

    1983-09-01

    A promising wave energy device being currently investigated is the ''clam'' device. The clam extracts energy by pumping air through a specially designed (Wells) turbine. Although operation of the Wells turbine does not require a rectified air flow, some additional control will be necessary to optimize the phase of the clam motion for good efficiencies. An examination of the equation of motion in the time domain suggests the possibility of non-linear phase control by mechanical, power take-off, or pneumatic latching. Latching can be shown to increase the efficiency of the device in the longer wavelengths of the wave spectrum, i.e. those of high incident wave power.

  11. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  12. First International Conference on Organic Nonlinear Optics. Section B: Nonlinear Optics, Principles, Materials, Phenomena, and Devices.

    DTIC Science & Technology

    1994-01-01

    Ferroelectrics, 91, 193 (1989). 16. Ch. Bosshard, M . Kiipfer, P. Gfinter, C. Pasquier, S. Zahir and M . Seifert, Appl. Phys. Lett., 56, 1204 (1990). 17. Ch...Appl. Phys., 72, 4521 (1992). 8. Ch. Bosshard, M . Kiipfer, P. Giinter, C. Pasquier, S. Zahir and M . Seifert, Appl. Phys. Lett., 56, 1204 (1990). 9...Materials, Phenomena, and Devices Editor: Takayoshi Kobayasbi University of Tokyo, Japan Consultant Editors: M M Labes, A F Garito East European and CIS

  13. Modified Hyperspheres Algorithm to Trace Homotopy Curves of Nonlinear Circuits Composed by Piecewise Linear Modelled Devices

    PubMed Central

    Vazquez-Leal, H.; Jimenez-Fernandez, V. M.; Benhammouda, B.; Filobello-Nino, U.; Sarmiento-Reyes, A.; Ramirez-Pinero, A.; Marin-Hernandez, A.; Huerta-Chua, J.

    2014-01-01

    We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation. PMID:25184157

  14. Modified hyperspheres algorithm to trace homotopy curves of nonlinear circuits composed by piecewise linear modelled devices.

    PubMed

    Vazquez-Leal, H; Jimenez-Fernandez, V M; Benhammouda, B; Filobello-Nino, U; Sarmiento-Reyes, A; Ramirez-Pinero, A; Marin-Hernandez, A; Huerta-Chua, J

    2014-01-01

    We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation.

  15. 3R MoS2 with Broken Inversion Symmetry: A Promising Ultrathin Nonlinear Optical Device.

    PubMed

    Shi, Jia; Yu, Peng; Liu, Fucai; He, Peng; Wang, Rui; Qin, Liang; Zhou, Junbo; Li, Xin; Zhou, Jiadong; Sui, Xinyu; Zhang, Shuai; Zhang, Yanfeng; Zhang, Qing; Sum, Tze Chien; Qiu, Xiaohui; Liu, Zheng; Liu, Xinfeng

    2017-08-01

    Nonlinear 2D layered crystals provide ideal platforms for applications and fundamental studies in ultrathin nonlinear optical (NLO) devices. However, the NLO frequency conversion efficiency constrained by lattice symmetry is still limited by layer numbers of 2D crystals. In this work, 3R MoS2 with broken inversion symmetry structure are grown and proved to be excellent NLO 2D crystals from monolayer (0.65 nm) toward bulk-like (300 nm) dimension. Thickness and wavelength-dependent second harmonic generation spectra offer the selection rules of appropriate working conditions. A model comprising of bulk nonlinear contribution and interface interaction is proposed to interpret the observed nonlinear behavior. Polarization enhancement with two petals along staggered stacking direction appears in 3R MoS2 is first observed and the robust polarization of 3R MoS2 crystal is caused by the retained broken inversion symmetry. The results provide a new arena for realizing ultrathin NLO devices for 2D layered materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Tunable strong nonlinearity of a micromechanical beam embedded in a dc-superconducting quantum interference device

    SciTech Connect

    Ella, Lior Yuvaraj, D.; Suchoi, Oren; Shtempluk, Oleg; Buks, Eyal

    2015-01-07

    We present a study of the controllable nonlinear dynamics of a micromechanical beam coupled to a dc-SQUID (superconducting quantum interference device). The coupling between these systems places the modes of the beam in a highly nonlinear potential, whose shape can be altered by varying the bias current and applied flux of the SQUID. We detect the position of the beam by placing it in an optical cavity, which sets free the SQUID to be used solely for actuation. This enables us to probe the previously unexplored full parameter space of this device. We measure the frequency response of the beam and find that it displays a Duffing oscillator behavior which is periodic in the applied magnetic flux. To account for this, we develop a model based on the standard theory for SQUID dynamics. In addition, with the aim of understanding if the device can reach nonlinearity at the single phonon level, we use this model to show that the responsivity of the current circulating in the SQUID to the position of the beam can become divergent, with its magnitude limited only by noise. This suggests a direction for the generation of macroscopically distinguishable superposition states of the beam.

  17. Semiconducting allotrope of graphene.

    PubMed

    Nisar, Jawad; Jiang, Xue; Pathak, Biswarup; Zhao, Jijun; Kang, Tae Won; Ahuja, Rajeev

    2012-09-28

    From first-principles calculations, we predict a planar stable graphene allotrope composed of a periodic array of tetragonal and octagonal (4, 8) carbon rings. The stability of this sheet is predicted from the room-temperature molecular dynamics study and the electronic structure is studied using state-of-the-art calculations such as the hybrid density functional and the GW approach. Moreover, the mechanical properties of (4, 8) carbon sheet are evaluated from the Young's modulus and intrinsic strength calculations. We find this is a stable planar semiconducting carbon sheet with a bandgap between 0.43 and 1.01 eV and whose mechanical properties are as good as graphene's.

  18. Identification procedures for the charge-controlled nonlinear noise model of microwave electron devices

    NASA Astrophysics Data System (ADS)

    Filicori, Fabio; Traverso, Pier Andrea; Florian, Corrado; Borgarino, Mattia

    2004-05-01

    The basic features of the recently proposed Charge-Controlled Non-linear Noise (CCNN) model for the prediction of low-to-high-frequency noise up-conversion in electron devices under large-signal RF operation are synthetically presented. It is shown that the different noise generation phenomena within the device can be described by four equivalent noise sources, which are connected at the ports of a "noiseless" device model and are non-linearly controlled by the time-varying instantaneous values of the intrinsic device voltages. For the empirical identification of the voltage-controlled equivalent noise sources, different possible characterization procedures, based not only on conventional low-frequency noise data, but also on different types of noise measurements carried out under large-signal RF operating conditions are discussed. As an example of application, the measurement-based identification of the CCNN model for a GaInP heterojunction bipolar microwave transistor is presented. Preliminary validation results show that the proposed model can describe with adequate accuracy not only the low-frequency noise of the HBT, but also its phase-noise performance in a prototype VCO implemented by using the same monolithic GaAs technology.

  19. Nonlinear Optical Properties of Semiconducting Polymers.

    DTIC Science & Technology

    1990-01-01

    D. Moses, K. Akagi and A. J. Heeger, P 3A, 10 724 (1988). Time-Resolved Waveguide Modulation of a Conjugated Polymer, M. Sinclair, D. McBranch, D...Photoinduced Metallic State and for Photoinduced Superconductivity, Solid State Communications (in P irss). b. Papers published in Refereed Journals M...and F. Wudl, Linear and Nonlirear Optical Studies of Poly( p -phenylene- vinylene) Derivatives and Polydiacetylene 4BCMU, Synth. Met. Z2, E85 (1989) M

  20. Microscopy of semiconducting materials

    NASA Astrophysics Data System (ADS)

    Pennycook, S. J.

    1991-04-01

    The purpose of the trip was to present an invited talk at the 7th Oxford Conference on Microscopy of Semiconducting Materials entitled, High-Resolution Z-Contrast Imaging of Heterostructures and Superlattices, (Oxford, United Kingdom) and to visit VG Microscopes, East Grinstead, for discussions on the progress of the Oak Ridge National Laboratory (ORNL) 300-kV high-resolution scanning transmission electron microscope (STEM), which is currently on order. The traveler also visited three other institutions with 100-kV STEMs that either have or intend to purchase the necessary modifications to provide Z-contrast capability similar to that of the existing ORNL machine. Specifically, Max-Planck Institut fuer Metallforschung (Stuttgart, Germany); Cambridge University, Department of Materials Science and Metallurgy (Cambridge, United Kingdom); and Cavendish Laboratory, Cambridge University (Cambridge, United Kingdom) were visited. In addition, discussions were held with C. Humphreys on the possibility of obtaining joint funding for collaborative research involving electron beam writing and Z-contrast imaging in the Cambridge and Oak Ridge STEMs, respectively.

  1. Nonlinear optimization-based device-free localization with outlier link rejection.

    PubMed

    Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

    2015-04-07

    Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach.

  2. Nonlinear Optimization-Based Device-Free Localization with Outlier Link Rejection

    PubMed Central

    Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

    2015-01-01

    Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach. PMID:25853406

  3. Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

    NASA Astrophysics Data System (ADS)

    Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2016-08-01

    Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

  4. Fiber-coupled nanophotonic devices for nonlinear optics and cavity QED

    NASA Astrophysics Data System (ADS)

    Barclay, Paul Edward

    2007-10-01

    The sub-wavelength optical confinement and low optical loss of nanophotonic devices dramatically enhances the interaction between light and matter within these structures. When nanophotonic devices are combined with an efficient optical coupling channel, nonlinear optical behavior can be observed at low power levels in weakly-nonlinear materials. In a similar vein, when resonant atomic systems interact with nanophotonic devices, atom-photon coupling effects can be observed at a single quanta level. Crucially, the chip based nature of nanophotonics provides a scalable platform from which to study these effects. This thesis addresses the use of nanophotonic devices in nonlinear and quantum optics, including device design, optical coupling, fabrication and testing, modeling, and integration with more complex systems. We present a fiber taper coupling technique that allows efficient power transfer from an optical fiber into a photonic crystal waveguide. Greater than 97% power transfer into a silicon photonic crystal waveguide is demonstrated. This optical channel is then connected to a high-Q (> 40,000), ultra-small mode volume (V < (lambda/n)3) photonic crystal cavity, into which we couple > 44% of the photons input to a fiber. This permits the observation of optical bistability in silicon for sub-mW input powers at telecommunication wavelengths. To port this technology to cavity QED experiments at near-visible wavelengths, we also study silicon nitride microdisk cavities at wavelengths near 852 nm, and observe resonances with Q > 3 million and V < 15 (lambda/n)3). This Q/V ratio is sufficiently high to reach the strong coupling regime with cesium atoms. We then permanently align and mount a fiber taper within the near-field an array of microdisks, and integrate this device with an atom chip, creating an "atom-cavity chip" which can magnetically trap laser cooled atoms above the microcavity. Calculations of the microcavity single atom sensitivity as a function of Q

  5. Integrated nanoplasmonic waveguides for magnetic, nonlinear, and strong-field devices

    NASA Astrophysics Data System (ADS)

    Sederberg, Shawn; Firby, Curtis J.; Greig, Shawn R.; Elezzabi, Abdulhakem Y.

    2017-01-01

    As modern complementary-metal-oxide-semiconductor (CMOS) circuitry rapidly approaches fundamental speed and bandwidth limitations, optical platforms have become promising candidates to circumvent these limits and facilitate massive increases in computational power. To compete with high density CMOS circuitry, optical technology within the plasmonic regime is desirable, because of the sub-diffraction limited confinement of electromagnetic energy, large optical bandwidth, and ultrafast processing capabilities. As such, nanoplasmonic waveguides act as nanoscale conduits for optical signals, thereby forming the backbone of such a platform. In recent years, significant research interest has developed to uncover the fundamental physics governing phenomena occurring within nanoplasmonic waveguides, and to implement unique optical devices. In doing so, a wide variety of material properties have been exploited. CMOS-compatible materials facilitate passive plasmonic routing devices for directing the confined radiation. Magnetic materials facilitate time-reversal symmetry breaking, aiding in the development of nonreciprocal isolators or modulators. Additionally, strong confinement and enhancement of electric fields within such waveguides require the use of materials with high nonlinear coefficients to achieve increased nonlinear optical phenomenon in a nanoscale footprint. Furthermore, this enhancement and confinement of the fields facilitate the study of strong-field effects within the solid-state environment of the waveguide. Here, we review current state-of-the-art physics and applications of nanoplasmonic waveguides pertaining to passive, magnetoplasmonic, nonlinear, and strong-field devices. Such components are essential elements in integrated optical circuitry, and each fulfill specific roles in truly developing a chip-scale plasmonic computing architecture.

  6. Advances in nonlinear characterization of millimetre-wave devices for telecommunications

    NASA Astrophysics Data System (ADS)

    Parker, Anthony E.

    2007-12-01

    Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias dependent change in trapped charge, and variations due to impact ionization. These are feedback mechanisms that contribute to intermodulation as a memory effect does. A FET is better viewed as a nonlinear system with feedback, bias dependent rates, and high-order nonlinear conductance and charge storage with specific terminal to terminal interaction. Identifying and characterizing FET dynamics and linearity is a key step in the design process. Extraction of true intrinsic characteristics is an important first step to understanding the physics of trapping and heating within the device. Standard measurement techniques tend to derive access networks with an emphasis on scaling with layout geometry. The intrinsic device is then modelled as whatever is left after de-embedding the measurements. As such, the intrinsic model exhibits significant frequency dispersions and behaviour that is not easily related to the operation of the transistor. A correct determination of the access network reveals that the dispersions within the intrinsic data are related to physical process, such as heating and trapping. Recent work has been carried out to accurately implement trapping within a circuit simulator. This is key to correct prediction of intermodulation and bias dependence effects generated by a FET. It is shown that heating significantly affects trapping and is an important factor in the transient rate dependence of the characteristics. The implementation of trapping within a circuit model, and its consequences on linearity are explored.

  7. Integrated nanoplasmonic waveguides for magnetic, nonlinear, and strong-field devices

    NASA Astrophysics Data System (ADS)

    Sederberg, Shawn; Firby, Curtis J.; Greig, Shawn R.; Elezzabi, Abdulhakem Y.

    2016-11-01

    As modern complementary-metal-oxide-semiconductor (CMOS) circuitry rapidly approaches fundamental speed and bandwidth limitations, optical platforms have become promising candidates to circumvent these limits and facilitate massive increases in computational power. To compete with high density CMOS circuitry, optical technology within the plasmonic regime is desirable, because of the sub-diffraction limited confinement of electromagnetic energy, large optical bandwidth, and ultrafast processing capabilities. As such, nanoplasmonic waveguides act as nanoscale conduits for optical signals, thereby forming the backbone of such a platform. In recent years, significant research interest has developed to uncover the fundamental physics governing phenomena occurring within nanoplasmonic waveguides, and to implement unique optical devices. In doing so, a wide variety of material properties have been exploited. CMOS-compatible materials facilitate passive plasmonic routing devices for directing the confined radiation. Magnetic materials facilitate time-reversal symmetry breaking, aiding in the development of nonreciprocal isolators or modulators. Additionally, strong confinement and enhancement of electric fields within such waveguides require the use of materials with high nonlinear coefficients to achieve increased nonlinear optical phenomenon in a nanoscale footprint. Furthermore, this enhancement and confinement of the fields facilitate the study of strong-field effects within the solid-state environment of the waveguide. Here, we review current state-of-the-art physics and applications of nanoplasmonic waveguides pertaining to passive, magnetoplasmonic, nonlinear, and strong-field devices. Such components are essential elements in integrated optical circuitry, and each fulfill specific roles in truly developing a chip-scale plasmonic computing architecture.

  8. Step-response of a torsional device with multiple discontinuous non-linearities: Formulation of a vibratory experiment

    NASA Astrophysics Data System (ADS)

    Krak, Michael D.; Dreyer, Jason T.; Singh, Rajendra

    2016-03-01

    A vehicle clutch damper is intentionally designed to contain multiple discontinuous non-linearities, such as multi-staged springs, clearances, pre-loads, and multi-staged friction elements. The main purpose of this practical torsional device is to transmit a wide range of torque while isolating torsional vibration between an engine and transmission. Improved understanding of the dynamic behavior of the device could be facilitated by laboratory measurement, and thus a refined vibratory experiment is proposed. The experiment is conceptually described as a single degree of freedom non-linear torsional system that is excited by an external step torque. The single torsional inertia (consisting of a shaft and torsion arm) is coupled to ground through parallel production clutch dampers, which are characterized by quasi-static measurements provided by the manufacturer. Other experimental objectives address physical dimensions, system actuation, flexural modes, instrumentation, and signal processing issues. Typical measurements show that the step response of the device is characterized by three distinct non-linear regimes (double-sided impact, single-sided impact, and no-impact). Each regime is directly related to the non-linear features of the device and can be described by peak angular acceleration values. Predictions of a simplified single degree of freedom non-linear model verify that the experiment performs well and as designed. Accordingly, the benchmark measurements could be utilized to validate non-linear models and simulation codes, as well as characterize dynamic parameters of the device including its dissipative properties.

  9. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    NASA Astrophysics Data System (ADS)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  10. Nonlinear polymer/quantum dots nanocomposite for two-photon nanolithography of photonic devices

    NASA Astrophysics Data System (ADS)

    Abrashitova, Ksenia A.; Gulkin, Dmitry N.; Kokareva, Natalia G.; Safronov, Kirill R.; Chizhov, Artem S.; Ezhov, Alexander A.; Bessonov, Vladimir O.; Fedyanin, Andrey A.

    2017-02-01

    In this paper we report on fabrication of a nanocomposite based on CdSe quantum dots mixed with commercial photoresist ORMOCOMP and proved its high structurability by direct laser writing. The distribution of quantum dots was visualised by transmission electron microscopy and the quality and geometrical parameters of the structures were studied by optical and atomic force microscopy. We manufactured a novel photonic device for Bloch surface electromagnetic waves in photonic crystals and thoroughly studied their propagation by both leakage microscopy and back focal plane imaging methods. By z-scan method we measured the nonlinear Kerr coefficient of quantum dots. Its high value makes the manufactured photonic device promising for all-optical switching applications.

  11. Nonlinear modeling of a long flexible manipulator and control by inertial devices

    NASA Technical Reports Server (NTRS)

    Barbieri, Enrique; Kenny, Sean P.; Montgomery, Raymond C.

    1992-01-01

    The authors consider the modeling and control of a planar, long flexible manipulator that is representative of current space-based robotic arms. The arm is equipped with three actuators: 1) a shoulder motor; 2) a torque wheel at the tip; and 3) a proof-mass actuator at the tip. The goal is to investigate the potential use of inertial devices as control inputs for maneuvering tasks and vibration suppression. The parameters used for the inertial devices at the tip are comparable to those specified for the Mini-Mast facility at the Langley Research Center. A nonlinear distributed parameter model is obtained by the extended Hamilton principle. The associated eigenvalue/eigenfunction problem is solved and a finite-dimensional state space model is assembled. A preliminary design of a linear quadratic regulator is used, and computer simulation results illustrate the benefits of using the proposed actuators.

  12. Optical diode action from axially asymmetric nonlinearity in an all-carbon solid-state device.

    PubMed

    Anand, Benoy; Podila, Ramakrishna; Lingam, Kiran; Krishnan, S R; Siva Sankara Sai, S; Philip, Reji; Rao, Apparao M

    2013-01-01

    Nanostructured carbons are posited to offer an alternative to silicon and lead to further miniaturization of photonic and electronic devices. Here, we report the experimental realization of the first all-carbon solid-state optical diode that is based on axially asymmetric nonlinear absorption in a thin saturable absorber (graphene) and a thin reverse saturable absorber (C60) arranged in tandem. This all-optical diode action is polarization independent and has no phase-matching constraints. The nonreciprocity factor of the device can be tuned by varying the number of graphene layers and the concentration or thickness of the C60 coating. This ultracompact graphene/C60 based optical diode is versatile with an inherently large bandwidth, chemical and thermal stability, and is poised for cost-effective large-scale integration with existing fabrication technologies.

  13. Ultrafast nonlinear photoresponse of single-wall carbon nanotubes: a broadband degenerate investigation

    NASA Astrophysics Data System (ADS)

    Xu, Shuo; Wang, Fengqiu; Zhu, Chunhui; Meng, Yafei; Liu, Yujie; Liu, Wenqing; Tang, Jingyi; Liu, Kaihui; Hu, Guohua; Howe, Richard C. T.; Hasan, Tawfique; Zhang, Rong; Shi, Yi; Xu, Yongbing

    2016-04-01

    Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband `degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ~2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of SWNTs' nonlinear absorption characteristics, and help provide updated design guidelines for SWNT based nonlinear optical devices.Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband `degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ~2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of

  14. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; Clark, R.

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  15. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; hide

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  16. Mesoscale Engineering of Nanocomposite Nonlinear Optical Materials

    SciTech Connect

    Afonso, C.N.; Feldman, L.C.; Gonella, F.; Haglund, R.F.; Luepke, G.; Magruder, R.H.; Mazzoldi, P.; Osborne, D.H.; Solis, J.; Zuhr, R.A.

    1999-11-01

    Complex nonlinear optical materials comprising elemental, compound or alloy quantum dots embedded in appropriate dielectric or semiconducting hosts may be suitable for deployment in photonic devices. Ion implantation, ion exchange followed by ion implantation, and pulsed laser deposition have ail been used to synthesize these materials. However, the correlation between the parameters of energetic-beam synthesis and the nonlinear optical properties is still very rudimentary when one starts to ask what is happening at nanoscale dimensions. Systems integration of complex nonlinear optical materials requires that the mesoscale materials science be well understood within the context of device structures. We discuss the effects of beam energy and energy density on quantum-dot size and spatial distribution, thermal conductivity, quantum-dot composition, crystallinity and defects - and, in turn, on the third-order optical susceptibility of the composite material. Examples from recent work in our laboratories are used to illustrate these effects.

  17. Superconducting-semiconducting nanowire hybrid microwave circuits

    NASA Astrophysics Data System (ADS)

    de Lange, G.; van Heck, B.; Bruno, A.; van Woerkom, D.; Geresdi, A.; Plissard, S. R.; Bakkers, E. P. A. M.; Akhmerov, A. R.; Dicarlo, L.

    2015-03-01

    Hybrid superconducting-semiconducting circuits offer a versatile platform for studying quantum effects in mesoscopic solid-state systems. We report the realization of hybrid artificial atoms based on Indium-Arsenide nanowire Josephson elements in a circuit quantum electrodynamics architecture. Transmon-like single-junction devices have gate-tunable transition frequencies. Split-junction devices behave as transmons near zero applied flux and as flux qubits near half flux quantum, wherein states with oppositely flowing persistent current can be driven by microwaves. This flux-qubit like behaviour results from non-sinusoidal current-phase relations in the nanowire Josephson elements. These hybrid microwave circuits are made entirely of magnetic-field compatible materials, offering new opportunities for hybrid experiments combining microwave circuits with polarized spin ensembles and Majorana bound states. We acknowledge funding from Microsoft Research and the Dutch Organization for Fundamental Research on Matter (FOM).

  18. Generating Non-Linear Concentration Gradients in Microfluidic Devices for Cell Studies

    PubMed Central

    Selimović, Šeila; Sim, Woo Young; Kim, Sang Bok; Jang, Yun Ho; Lee, Won Gu; Khabiry, Masoud; Bae, Hojae; Jambovane, Sachin; Hong, Jong Wook; Khademhosseini, Ali

    2011-01-01

    We describe a microfluidic device for generating non-linear (exponential and sigmoidal) concentration gradients, coupled with a microwell array for cell storage and analysis. The device has two inputs for co-flowing multiple aqueous solutions, a main co-flow channel and an asymmetrical grid of fluidic channels that allows the two solutions to combine at intersection points without fully mixing. Due to this asymmetry and diffusion of the two species in the co-flow channel, varying amounts of the two solutions enter each fluidic path. This induces exponential and sigmoidal concentration gradients at low and high flow rates, respectively, making the microfluidic device versatile. A key feature of this design is that it is space-saving, as it does not require multiplexing or a separate array of mixing channels. Furthermore, the gradient structure can be utilized in concert with cell experiments, to expose cells captured in microwells to various concentrations of soluble factors. We demonstrate the utility of this design to assess the viability of fibroblast cells in response to a range of hydrogen peroxide (H2O2) concentrations. PMID:21344866

  19. Nonlinear Thermoelectricity in Disordered Nanowires

    NASA Astrophysics Data System (ADS)

    Muttalib, K. A.; Hershfield, Selman

    2015-05-01

    The creation of efficient thermoelectric devices remains a technological challenge. Using nanoscale-engineered devices offers some potential advantages over bulk materials; however, they also present new problems. The microscopic Hamiltonian of a device which optimizes the efficiency and power output for a particular load and temperature profile is not necessarily optimum for another temperature difference and external load. Furthermore, one cannot necessarily manufacture a particular Hamiltonian. In this paper, we calculate the nonlinear thermoelectric transport through a gate-modulated one-dimensional disordered semiconducting nanowire connected to two large leads. The disorder is chosen to be Lorentzian, which allows exact results for transmission through the wire for all strengths of disorder. By tuning the gate voltage acting on the nanowire, we show that the thermodynamic efficiency can be made large enough to be industrially competitive. The gate voltage allows one to maximize the efficiency and power output for particular temperature differences between the leads as well as different external loads.

  20. Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

    NASA Astrophysics Data System (ADS)

    Wang, Zongwei; Kang, Jian; Yu, Zhizhen; Fang, Yichen; Ling, Yaotian; Cai, Yimao; Huang, Ru; Wang, Yangyuan

    2017-02-01

    A resistive switching device with inherent nonlinear characteristics through a delicately engineered interfacial layer is an ideal component to be integrated into passive crossbar arrays for the suppression of sneaking current, especially in ultra-dense 3D integration. In this paper, we demonstrated a TaOx-based bipolar resistive switching device with a nearly symmetrical bi-directional nonlinear feature through interface engineering. This was accomplished by introducing an ultra-thin interfacial layer (SiO2-x) with unique features, including a large band gap and a certain level of negative heat of oxide formation between the top electrode (TiN) and resistive layer (TaOx). The devices exhibit excellent nonlinear property under both positive and negative bias. Modulation of the inherent nonlinearity as well as the resistive switching mechanism are comprehensively studied by scrutinizing the results of the experimental control groups and the extensive characterizations including detailed compositional analysis, which suggests that the underlying mechanism of the nonlinear behavior is associatively governed by the serially connected metallic conductive filament and Flower-Nordheim tunneling barrier formed by the SiO2-x interface layer. The proposed device in this work has great potential to be implemented in future massive storage memory applications of high-density selector-free crossbar structure.

  1. Measuring derived acoustic power of an ultrasound surgical device in the linear and nonlinear operating modes.

    PubMed

    Petosić, Antonio; Ivancević, Bojan; Svilar, Dragoljub

    2009-06-01

    The method for measuring derived acoustic power of an ultrasound point source in the form of a sonotrode tip has been considered in the free acoustic field, according to the IEC 61847 standard. The main objective of this work is measuring averaged pressure magnitude spatial distribution of an sonotrode tip in the free acoustic field conditions at different electrical excitation levels and calculation of the derived acoustic power at excitation frequency (f0 approximately 25 kHz). Finding the derived acoustic power of an ultrasonic surgical device in the strong cavitation regime of working, even in the considered laboratory conditions (anechoic pool), will enable better understanding of the biological effects on the tissue produced during operation with the considered device. The pressure magnitude spatial distribution is measured using B&K 8103 hydrophone connected with a B&K 2626 conditioning amplifier, digital storage oscilloscope LeCroy Waverunner 474, where pressure waveforms in the field points are recorded. Using MATLAB with DSP processing toolbox, averaged power spectrum density of recorded pressure signals in different field positions is calculated. The measured pressure magnitude spatial distributions are fitted with the appropriate theoretical models. In the linear operating mode, using the acoustic reciprocity principle, the sonotrode tip is theoretically described as radially oscillating sphere (ROS) and transversely oscillating sphere (TOS) in the vicinity of pressure release boundary. The measured pressure magnitude spatial distribution is fitted with theoretical curves, describing the pressure field of the considered theoretical models. The velocity and displacement magnitudes with derived acoustic power of equivalent theoretical sources are found, and the electroacoustic efficiency factor is calculated. When the transmitter is excited at higher electrical power levels, the displacement magnitude of sonotrode tip is increased, and nonlinear behaviour

  2. A time domain vector finite element method for the full wave simulation of nonlinear photonic devices

    NASA Astrophysics Data System (ADS)

    Fisher, Aaron C.

    We have developed a mixed Vector Finite Element Method (VFEM) for Maxwell's equations with third order polarization terms. The method allows for discretization of complicated device geometries with arbitrary order representations of the B and E fields, and up to 4th order accurate time discretization. Additionally we have implemented a series of computational optimizations that significantly increase the scale of simulations that can be performed with this method. Among these optimizations is a new generalized mass lumping method that we developed which reduces the computational cost of the finite element system solve by a factor of 10x. In this dissertation we will present the Vector Finite Element Method, and the computational optimizations that we employed. Additionally, we will present a series of analyses and simulations that were performed to validate the method. Finally, we will present some production runs using this method, including nonlinear mode mixing in waveguides and supercontinuum generation in a photonic crystal fiber.

  3. Nonlinear structured-illumination enhanced temporal focusing multiphoton excitation microscopy with a digital micromirror device

    PubMed Central

    Cheng, Li-Chung; Lien, Chi-Hsiang; Da Sie, Yong; Hu, Yvonne Yuling; Lin, Chun-Yu; Chien, Fan-Ching; Xu, Chris; Dong, Chen Yuan; Chen, Shean-Jen

    2014-01-01

    In this study, the light diffraction of temporal focusing multiphoton excitation microscopy (TFMPEM) and the excitation patterning of nonlinear structured-illumination microscopy (NSIM) can be simultaneously and accurately implemented via a single high-resolution digital micromirror device. The lateral and axial spatial resolutions of the TFMPEM are remarkably improved through the second-order NSIM and projected structured light, respectively. The experimental results demonstrate that the lateral and axial resolutions are enhanced from 397 nm to 168 nm (2.4-fold) and from 2.33 μm to 1.22 μm (1.9-fold), respectively, in full width at the half maximum. Furthermore, a three-dimensionally rendered image of a cytoskeleton cell featuring ~25 nm microtubules is improved, with other microtubules at a distance near the lateral resolution of 168 nm also able to be distinguished. PMID:25136483

  4. Nonlinear structured-illumination enhanced temporal focusing multiphoton excitation microscopy with a digital micromirror device.

    PubMed

    Cheng, Li-Chung; Lien, Chi-Hsiang; Da Sie, Yong; Hu, Yvonne Yuling; Lin, Chun-Yu; Chien, Fan-Ching; Xu, Chris; Dong, Chen Yuan; Chen, Shean-Jen

    2014-08-01

    In this study, the light diffraction of temporal focusing multiphoton excitation microscopy (TFMPEM) and the excitation patterning of nonlinear structured-illumination microscopy (NSIM) can be simultaneously and accurately implemented via a single high-resolution digital micromirror device. The lateral and axial spatial resolutions of the TFMPEM are remarkably improved through the second-order NSIM and projected structured light, respectively. The experimental results demonstrate that the lateral and axial resolutions are enhanced from 397 nm to 168 nm (2.4-fold) and from 2.33 μm to 1.22 μm (1.9-fold), respectively, in full width at the half maximum. Furthermore, a three-dimensionally rendered image of a cytoskeleton cell featuring ~25 nm microtubules is improved, with other microtubules at a distance near the lateral resolution of 168 nm also able to be distinguished.

  5. Testing of next-generation nonlinear calibration based non-uniformity correction techniques using SWIR devices

    NASA Astrophysics Data System (ADS)

    Lovejoy, McKenna R.; Wickert, Mark A.

    2017-05-01

    A known problem with infrared imaging devices is their non-uniformity. This non-uniformity is the result of dark current, amplifier mismatch as well as the individual photo response of the detectors. To improve performance, non-uniformity correction (NUC) techniques are applied. Standard calibration techniques use linear, or piecewise linear models to approximate the non-uniform gain and off set characteristics as well as the nonlinear response. Piecewise linear models perform better than the one and two-point models, but in many cases require storing an unmanageable number of correction coefficients. Most nonlinear NUC algorithms use a second order polynomial to improve performance and allow for a minimal number of stored coefficients. However, advances in technology now make higher order polynomial NUC algorithms feasible. This study comprehensively tests higher order polynomial NUC algorithms targeted at short wave infrared (SWIR) imagers. Using data collected from actual SWIR cameras, the nonlinear techniques and corresponding performance metrics are compared with current linear methods including the standard one and two-point algorithms. Machine learning, including principal component analysis, is explored for identifying and replacing bad pixels. The data sets are analyzed and the impact of hardware implementation is discussed. Average floating point results show 30% less non-uniformity, in post-corrected data, when using a third order polynomial correction algorithm rather than a second order algorithm. To maximize overall performance, a trade off analysis on polynomial order and coefficient precision is performed. Comprehensive testing, across multiple data sets, provides next generation model validation and performance benchmarks for higher order polynomial NUC methods.

  6. CONTROL OF NONLINEAR DYNAMICS BY ACTIVE AND PASSIVE METHODS FOR THE NSLS-II INSERTION DEVICES

    SciTech Connect

    Bengtsson J.; Chubar, O.; Kitegi, C.; Tanabe, T.

    2012-05-20

    Nonlinear effects from insertion devices are potentially a limiting factor for the electron beam quality of modern ring-based light sources, i.e., the on and off-dynamical aperture, leading to reduced injection efficiency and beam lifetime. These effects can be modelled by e.g. kick maps ({approx}1/{gamma}{sup 2}) and controlled by e.g. first-order thin or thick magnetic kicks introduced by 'magic fingers,' 'L-shims,' or 'current strips'. However, due to physical or technological constraints, these corrections are typically only partial. Therefore, a precise model is needed to correctly minimize the residual nonlinear effects for the entire system. We outline a systematic method for integrated design and rapid prototyping based on evaluation of the 3D magnetic field and control of the local trajectory with RADIA, and particle tracking with Tracy-3 for validation. The optimal geometry for the compensating magnetic fields is determined from the results of these simulations using a combination of linear algebra and genetic optimization.

  7. Prolonging charge separation in P3HT-SWNT composites using highly enriched semiconducting nanotubes.

    PubMed

    Holt, Josh M; Ferguson, Andrew J; Kopidakis, Nikos; Larsen, Brian A; Bult, Justin; Rumbles, Garry; Blackburn, Jeffrey L

    2010-11-10

    Single-walled carbon nanotubes (SWNTs) have potential as electron acceptors in organic photovoltaics (OPVs), but the currently low-power conversion efficiencies of devices remain largely unexplained. We demonstrate effective redispersion of isolated, highly enriched semiconducting and metallic SWNTs into poly(3-hexylthiophene) (P3HT). We use these enriched blends to provide the first experimental evidence of the negative impact of metallic nanotubes. Time-resolved microwave conductivity reveals that the long-lived carrier population can be significantly increased by incorporating highly enriched semiconducting SWNTs into semiconducting polymer composites.

  8. Ni doping of semiconducting boron carbide

    SciTech Connect

    Hong, Nina; Liu Jing; Adenwalla, S.; Langell, M. A.; Kizilkaya, Orhan

    2010-01-15

    The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron carbide make it an attractive material for device applications. Undoped boron carbide is p type; Ni acts as a n-type dopant. Here we present the results of controlled doping of boron carbide with Ni on thin film samples grown using plasma enhanced chemical vapor deposition. The change in the dopant concentration within the thin film as a function of the dopant flow rate in the precursor gas mixture was confirmed by x-ray photoelectron spectroscopy measurements; with increasing dopant concentration, current-voltage (I-V) curves clearly establish the trend from p-type to n-type boron carbide.

  9. Terahertz quantum cascade laser sources based on difference-frequency generation: from passive nonlinearity to leaky THz waveguide device concept

    NASA Astrophysics Data System (ADS)

    Vizbaras, A.; Vijayraghavan, K.; Adams, R. W.; Boehm, G.; Belkin, M. A.; Amann, M. C.

    2012-10-01

    GaInAs/AlInAs/InP quantum cascade lasers have established themselves as reliable laser sources in the mid-infrared region (3.8-10) μm, where they operate at room-temperature in continuous-wave with Watt-level output powers. However, wavelengths above this wavelength region are difficult to generate. At long wavelengths, devices suffer from increased free-carrier absorption and poor population inversion due to the short upper laser state lifetime, thus limiting their operation to cryogenic temperatures. An alternative way to generate new frequencies is the by means of nonlinear frequency mixing. For long-wavelengths, the process of difference frequency mixing is of particular interest, as it is possible to utilize the good performance of the mid-infrared QCLs, acting as pump sources, together with the giant nonlinear properties that can be realized in the intersubband transitions of the quantum wells. Moreover, the giant nonlinearity can be monolithically integrated with the pump sources, leading to a compact, electrically pumped room-temperature semiconductor laser source, emitting at terahertz frequencies. In our work, we present several different concepts of monolithic nonlinear quantum cascade laser sources, designed to emit in the THz range: devices with passive giant nonlinearities, active nonlinearities and, finally, devices with active nonlinearities, combined with novel THz waveguiding techniques. We will demonstrate how application of novel THz waveguiding techniques avoids the efficiency suppression the large free-carrier absorption at THz frequencies in the doped semiconductor layers enabling room-temperature operation up to 1.2 THz.

  10. Investigations on nonlinear optical properties of electron beam treated Gd:ZnO thin films for photonic device applications

    NASA Astrophysics Data System (ADS)

    Spoorthi, K.; Pramodini, S.; Kityk, I. V.; Abd-Lefdil, M.; Sekkati, M.; El Fakir, A.; Rao, Ashok; Sanjeev, Ganesh; Poornesh, P.

    2017-06-01

    In this article, we report the third-order nonlinear optical properties of electron beam irradiated gadolinium-doped zinc oxide (GZO) thin films prepared using the spray pyrolysis deposition technique. GZO thin films were treated with an electron beam from a variable energy microtron accelerator at dose rates ranging from 1-5 kGy. Nonlinear optical measurements were conducted by employing the single beam Z-scan technique. A continuous wave He-Ne laser operating at 633 nm was used as the source of excitation. Closed aperture Z-scan results reveal that the films exhibit self-defocusing nonlinearity. Open aperture Z-scan results exhibit a switching over phenomena of reverse saturable absorption to saturable absorption for thin film irradiated at 3 kGy, indicating the influence of electron beams on optical nonlinearity. The significant change in third-order nonlinear optical susceptibility χ (3) ranging from 2.14  ×  10-3 to 3.12  ×  10-3 esu is attributed to the effect of electron beam irradiation. The study shows that the nonlinear coefficients of GZO films can be tuned by electron beams for use in nonlinear optical device applications.

  11. Atomically thin semiconducting layers and nanomembranes: a review

    NASA Astrophysics Data System (ADS)

    Dragoman, Mircea; Dragoman, Daniela; Tiginyanu, Ion

    2017-03-01

    This article reviews the main physical properties of atomically thin semiconductors and the electronic devices based on them. We start with graphene, describing its physical properties and growth methods, followed by a discussion of its electronic device applications. Then, transition metal dichalcogenides (TMDs) are analyzed as a prototype of atomically thin semiconductors, their physical properties, growth methods, and electronic devices are discussed in detail. Finally, non-layered semiconducting membranes with thicknesses ranging from a few nanometers to about 50 nm, and considered as counterparts of atomically thin semiconductors, are analyzed, and their applications presented.

  12. Multigap Semiconducting ferroelectric perovskites

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Davies, Peter; Rappe, Andrew

    2013-03-01

    The energy conversion efficiency of a solar cell is directly related to the band gap of the material. By doping ferroelectric perovskites with Bi5+ on the B-site, we propose low band-gap materials suitable for bulk photovoltaic effect and related solar applications.Our DFT calculations indicate that the low-lying 6 s empty states of the electronegative Bi atom produce empty isolated bands in the gap of the parent materials, effectively lowering the band gap by 1 ~2eV in various perovskites. Ferroelectricity (and therefore inversion symmetry breaking) weakens but survives upon doping, which enables the ``shift current'' mechanism for photocurrent generation, while the decreased band gap helps absorb low energy photons in the visible range. Furthermore, the existence of multiple band gaps allows for solar conversion devices with efficiency beyond the traditional Shockly-Queisser limit, in which successive photon excitations result in carriers with higher energy than a single-step excitation would achieve.

  13. Acceleration Sensing, Feedback Cooling, and Nonlinear Dynamics with Nanoscale Cavity-Optomechanical Devices

    NASA Astrophysics Data System (ADS)

    Krause, Alexander Grey

    Light has long been used for the precise measurement of moving bodies, but the burgeoning field of optomechanics is concerned with the interaction of light and matter in a regime where the typically weak radiation pressure force of light is able to push back on the moving object. This field began with the realization in the late 1960's that the momentum imparted by a recoiling photon on a mirror would place fundamental limits on the smallest measurable displacement of that mirror. This coupling between the frequency of light and the motion of a mechanical object does much more than simply add noise, however. It has been used to cool objects to their quantum ground state, demonstrate electromagnetically-induced-transparency, and modify the damping and spring constant of the resonator. Amazingly, these radiation pressure effects have now been demonstrated in systems ranging 18 orders of magnitude in mass (kg to fg). In this work we will focus on three diverse experiments in three different optomechanical devices which span the fields of inertial sensors, closed-loop feedback, and nonlinear dynamics. The mechanical elements presented cover 6 orders of magnitude in mass (ng to fg), but they all employ nano-scale photonic crystals to trap light and resonantly enhance the light-matter interaction. In the first experiment we take advantage of the sub-femtometer displacement resolution of our photonic crystals to demonstrate a sensitive chip-scale optical accelerometer with a kHz-frequency mechanical resonator. This sensor has a noise density of approximately 10 micro-g/rt-Hz over a useable bandwidth of approximately 20 kHz and we demonstrate at least 50 dB of linear dynamic sensor range. We also discuss methods to further improve performance of this device by a factor of 10. In the second experiment, we used a closed-loop measurement and feedback system to damp and cool a room-temperature MHz-frequency mechanical oscillator from a phonon occupation of 6.5 million down to

  14. A nonlinear MEMS electrostatic kinetic energy harvester for human-powered biomedical devices

    SciTech Connect

    Lu, Y.; Cottone, F.; Marty, F.; Basset, P.; Galayko, D.

    2015-12-21

    This article proposes a silicon-based electrostatic kinetic energy harvester with an ultra-wide operating frequency bandwidth from 1 Hz to 160 Hz. This large bandwidth is obtained, thanks to a miniature tungsten ball impacting with a movable proof mass of silicon. The motion of the silicon proof mass is confined by nonlinear elastic stoppers on the fixed part standing against two protrusions of the proof mass. The electrostatic transducer is made of interdigited-combs with a gap-closing variable capacitance that includes vertical electrets obtained by corona discharge. Below 10 Hz, the e-KEH offers 30.6 nJ per mechanical oscillation at 2 g{sub rms}, which makes it suitable for powering biomedical devices from human motion. Above 10 Hz and up to 162 Hz, the harvested power is more than 0.5 μW with a maximum of 4.5 μW at 160 Hz. The highest power of 6.6 μW is obtained without the ball at 432 Hz, in accordance with a power density of 142 μW/cm{sup 3}. We also demonstrate the charging of a 47-μF capacitor to 3.5 V used to power a battery-less wireless temperature sensor node.

  15. Plasma effects in semiconducting nanowire growth

    NASA Astrophysics Data System (ADS)

    Ostrikov, Kostya (Ken); Seo, Dong Han; Mehdipour, Hamid; Cheng, Qijin; Kumar, Shailesh

    2012-02-01

    Three case studies are presented to show low-temperature plasma-specific effects in the solution of (i) effective control of nucleation and growth; (ii) environmental friendliness; and (iii) energy efficiency critical issues in semiconducting nanowire growth. The first case (related to (i) and (iii)) shows that in catalytic growth of Si nanowires, plasma-specific effects lead to a substantial increase in growth rates, decrease of the minimum nanowire thickness, and much faster nanowire nucleation at the same growth temperatures. For nucleation and growth of nanowires of the same thickness, much lower temperatures are required. In the second example (related to (ii)), we produce Si nanowire networks with controllable nanowire thickness, length, and area density without any catalyst or external supply of Si building material. This case is an environmentally-friendly alternative to the commonly used Si microfabrication based on a highly-toxic silane precursor gas. The third example is related to (iii) and demonstrates that ZnO nanowires can be synthesized in plasma-enhanced CVD at significantly lower process temperatures than in similar neutral gas-based processes and without compromising structural quality and performance of the nanowires. Our results are relevant to the development of next-generation nanoelectronic, optoelectronic, energy conversion and sensing devices based on semiconducting nanowires.Three case studies are presented to show low-temperature plasma-specific effects in the solution of (i) effective control of nucleation and growth; (ii) environmental friendliness; and (iii) energy efficiency critical issues in semiconducting nanowire growth. The first case (related to (i) and (iii)) shows that in catalytic growth of Si nanowires, plasma-specific effects lead to a substantial increase in growth rates, decrease of the minimum nanowire thickness, and much faster nanowire nucleation at the same growth temperatures. For nucleation and growth of nanowires

  16. Strategies on improving the micro-fluidic devices using the nonlinear electro- and thermo-kinetic phenomena.

    PubMed

    Sugioka, Hideyuki

    2015-12-01

    Surface science is key to innovations on microfluidics, smart materials, and future non-equilibrium systems. However, challenging issues still exist in this field. In this article, from the viewpoint of the fundamental design, we will briefly review our strategies on improving the micro-fluidic devices using the nonlinear electro- and thermo-kinetic phenomena. In particular, we will review the microfluidic applications using ICEO, the correction based on the ion-conserving Poisson-Boltzmann theory, the direct simulation on ICEO, and the new horizon such as nonlinear thermo-kinetic phenomena and the artificial cilia.

  17. Atomistic study on dithiolated oligo-phenylenevinylene gated device

    SciTech Connect

    Mahmoud, Ahmed Lugli, Paolo

    2014-11-28

    Thanks to their semiconducting behavior, conjugated molecules are considered as an attractive candidate for future electronic devices. Understanding the charge transport characteristics through such molecules for different device applications would accelerate the progress in the field of molecular electronics. In addition, it would become more feasible to introduce/enhance specific properties of molecular devices. This theoretical paper focuses on atomistic simulation and characterization of novel molecular FET employing dithiolated oligo-phenylenevinylene molecules. The simulation is validated by its agreement with the experimental measurements conducted on the same molecules. The employed molecule has oxygen linkers, which are responsible for the strongly nonlinear current characteristics on the molecular device. We perform a thorough atomistic device analysis to illustrate the principles behind the nonlinear current characteristics and the gating effect.

  18. Graphene-assisted nonlinear optical device for four-wave mixing based tunable wavelength conversion of QPSK signal.

    PubMed

    Hu, Xiao; Zeng, Mengqi; Wang, Andong; Zhu, Long; Fu, Lei; Wang, Jian

    2015-10-05

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using such graphene-assisted nonlinear optical device, we experimentally demonstrate tunable wavelength conversion of a 10 Gbaud quadrature phase-shift keying (QPSK) signal by exploiting degenerate four-wave mixing (FWM) progress in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. The observed optical signal-to-noise ratio (OSNR) penalties for tunable QPSK wavelength conversion are less than 2.2 dB at a BER of 1 × 10(-3).

  19. Semiconducting phase in borophene: role of defect and strain

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Gargee; Mahata, Arup; Choudhuri, Indrani; Pathak, Biswarup

    2017-10-01

    Boron is an interesting element due to its chemical and structural complexity. Recent synthesis of borophene led scientists to study boron monolayer-based materials for various applications. Using density functional theory calculations, nineteen different phases of boron monolayer (with hexagonal hole densities from 1/32–8/32) are studied to understand their origin of buckling, stability, and planarity. Projected densities of states of various phases of borophene-based systems with defect are plotted into in-plane (s  +  p x   +  p y ) and out-of-plane (p z ) orbitals to understand the role of the σ and π-bands towards their geometry and stability. Interestingly, the λ 5-sheet shows semiconducting properties under uniaxial/biaxial tensile/compressive strains and it shows excellent dynamical, thermal, and mechanical properties and is thus a promising semiconducting phase for electronic devices.

  20. Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

    NASA Astrophysics Data System (ADS)

    Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

    2016-12-01

    Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (˜15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes.

  1. Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

    PubMed Central

    Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

    2016-01-01

    Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

  2. Doping of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kutler, Paul (Technical Monitor)

    1997-01-01

    Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

  3. Ohmic contacts to semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  4. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  5. Electrospun Composite Nanofibers of Semiconductive Polymers for Coaxial PN Junctions

    NASA Astrophysics Data System (ADS)

    Serrano, William; Thomas, Sylvia

    The objective of this research is to investigate the conditions under P3HT and Activink, semiconducting polymers, form 1 dimension (1D) coaxial p-n junctions and to characterize their behavior in the presence of UV radiation and organic gases. For the first time, fabrication and characterization of semiconductor polymeric single fiber coaxial arrangements will be studied. Electrospinning, a low cost, fast and reliable method, with a coaxial syringe arrangement will be used to fabricate these fibers. With the formation of fiber coaxial arrangements, there will be investigations of dimensionality crossovers e.g., from one-dimensional (1D) to two-dimensional (2D). Coaxial core/shell fibers have been realized as seen in a recent publication on an electrospun nanofiber p-n heterojunction of oxides (BiFeO3 and TiO2, respectively) using the electrospinning technique with hydrothermal method. In regards to organic semiconducting coaxial p-n junction nanofibers, no reported studies have been conducted, making this study fundamental and essential for organic semiconducting nano devices for flexible electronics and multi-dimensional integrated circuits.

  6. Two-fluid sub-grid-scale viscosity in nonlinear simulation of ballooning modes in a heliotron device

    NASA Astrophysics Data System (ADS)

    Miura, H.; Hamba, F.; Ito, A.

    2017-07-01

    A large eddy simulation (LES) approach is introduced to enable the study of the nonlinear growth of ballooning modes in a heliotron-type device, by solving fully 3D two-fluid magnetohydrodynamic (MHD) equations numerically over a wide range of parameter space, keeping computational costs as low as possible. A model to substitute the influence of scales smaller than the grid size, at sub-grid scale (SGS), and at the scales larger than it—grid scale (GS)—has been developed for LES. The LESs of two-fluid MHD equations with SGS models have successfully reproduced the growth of the ballooning modes in the GS and nonlinear saturation. The numerical results show the importance of SGS effects on the GS components, or the effects of turbulent fluctuation at small scales in low-wavenumber unstable modes, over the course of the nonlinear saturation process. The results also show the usefulness of the LES approach in studying instability in a heliotron device. It is shown through a parameter survey over many SGS model coefficients that turbulent small-scale components in experiments can contribute to keeping the plasma core pressure from totally collapsing.

  7. Correlation between quasi-static and dynamic experiments for a practical torsional device with multiple discontinuous nonlinearities

    NASA Astrophysics Data System (ADS)

    Krak, Michael D.; Singh, Rajendra

    2016-09-01

    Vehicle clutch dampers belong to a family of torsional devices or isolators that contain multi-staged torsional springs, pre-load features, clearances, and multi-staged dry friction elements. Estimation of elastic and dissipative parameters is usually carried out under quasi-static loading and then these static parameters are often assumed when predicting dynamic responses. For the purpose of comparison, this article proposes a new time domain parameter estimation method under dynamic, transient loading conditions. The proposed method assumes a priori knowledge of few nonlinear features based on the design and quasi-static characterization. Angular motion measurements from a component-level laboratory experiment under dynamic loading are utilized. Elastic parameters are first estimated through an instantaneous stochastic linearization technique. A model-based approach and energy balance principle are employed to estimate a combination of viscous and Coulomb damping parameters for seven local (stage-dependent) and global damping formulations for a practical device. The proposed method is validated by comparing time domain predictions from nonlinear models to dynamic measurements. Nonlinear models that utilize the proposed damping formulations are found to be superior to those that solely rely on parameters from a quasi-static experiment.

  8. Spray printing of organic semiconducting single crystals

    PubMed Central

    Rigas, Grigorios-Panagiotis; Payne, Marcia M.; Anthony, John E.; Horton, Peter N.; Castro, Fernando A.; Shkunov, Maxim

    2016-01-01

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics. PMID:27874001

  9. Spray printing of organic semiconducting single crystals.

    PubMed

    Rigas, Grigorios-Panagiotis; Payne, Marcia M; Anthony, John E; Horton, Peter N; Castro, Fernando A; Shkunov, Maxim

    2016-11-22

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

  10. Spray printing of organic semiconducting single crystals

    NASA Astrophysics Data System (ADS)

    Rigas, Grigorios-Panagiotis; Payne, Marcia M.; Anthony, John E.; Horton, Peter N.; Castro, Fernando A.; Shkunov, Maxim

    2016-11-01

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

  11. A non-device-specific approach to display characterization based on linear, nonlinear, and hybrid search algorithms.

    PubMed

    Ban, Hiroshi; Yamamoto, Hiroki

    2013-05-31

    In almost all of the recent vision experiments, stimuli are controlled via computers and presented on display devices such as cathode ray tubes (CRTs). Display characterization is a necessary procedure for such computer-aided vision experiments. The standard display characterization called "gamma correction" and the following linear color transformation procedure are established for CRT displays and widely used in the current vision science field. However, the standard two-step procedure is based on the internal model of CRT display devices, and there is no guarantee as to whether the method is applicable to the other types of display devices such as liquid crystal display and digital light processing. We therefore tested the applicability of the standard method to these kinds of new devices and found that the standard method was not valid for these new devices. To overcome this problem, we provide several novel approaches for vision experiments to characterize display devices, based on linear, nonlinear, and hybrid search algorithms. These approaches never assume any internal models of display devices and will therefore be applicable to any display type. The evaluations and comparisons of chromaticity estimation accuracies based on these new methods with those of the standard procedure proved that our proposed methods largely improved the calibration efficiencies for non-CRT devices. Our proposed methods, together with the standard one, have been implemented in a MATLAB-based integrated graphical user interface software named Mcalibrator2. This software can enhance the accuracy of vision experiments and enable more efficient display characterization procedures. The software is now available publicly for free.

  12. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2012-10-02

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  13. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2010-05-11

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  14. Non-Linear Analysis of the Elastic Behaviour of a Translation Device for X-Ray Interferometry

    NASA Astrophysics Data System (ADS)

    Mana, G.; Vattaneo, F.; Zosi, G.

    1989-01-01

    A tridimensional, non-linear, finite-element analysis, supplementing a previous bidimensional linear analysis, was applied to characterize the performance of a zerodur translation device for X-ray fringe scanning. The effects of errors deriving from machining tolerances or of parasitic force components are taken into account. Optimization criteria indicate that residual tilt angles can be reduced to less than 1 nrad over a displacement of 120 μm, obtained with a driving force of about 1 N. Each point of the upper platform moves in the vertical plane along an almost circular trajectory.

  15. Thermal Crosslinking of Organic Semiconducting Polythiophene Improves Transverse Hole Conductivity

    SciTech Connect

    Gearba, I.R.; Nam, C.-Y.; Pindak, R.; Black, C.T.

    2009-10-26

    Thermal crosslinking using a suitable radical initiator simultaneously improves electrical conductivity in the semiconducting polymer poly(3-hexylthiophene) and makes the material insoluble. Crosslinked polythiophene shows as much as a fivefold increase in hole conductivity across the film thickness without any shift in spectral light absorption. Grazing incidence x-ray diffraction reveals more in-plane polymer lamellae stacking with only a small decrease in film crystallinity. Improved transverse conductivity increases the performance of model planar solar cells by threefold, from 0.07% to 0.2%. The ability to render polythiophene insoluble without disrupting film structural order enables fabrication pathways to more complex device architectures.

  16. 3D semiconducting nanostructures via inverse lipid cubic phases.

    PubMed

    Burton, M R; Lei, C; Staniec, P A; Terrill, N J; Squires, A M; White, N M; Nandhakumar, Iris S

    2017-07-25

    Well-ordered and highly interconnected 3D semiconducting nanostructures of bismuth sulphide were prepared from inverse cubic lipid mesophases. This route offers significant advantages in terms of mild conditions, ease of use and electrode architecture over other routes to nanomaterials synthesis for device applications. The resulting 3D bicontinous nanowire network films exhibited a single diamond topology of symmetry Fd3m (Q227) which was verified by Small angle X-ray scattering (SAXS) and Transmission electron microscopy (TEM) and holds great promise for potential applications in optoelectronics, photovoltaics and thermoelectrics.

  17. High-mobility ultrathin semiconducting films prepared by spin coating.

    PubMed

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  18. High-mobility ultrathin semiconducting films prepared by spin coating

    NASA Astrophysics Data System (ADS)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  19. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Zhuang, Shendong; Chen, Yan; Xia, Yidong; Tang, Nujiang; Xu, Xiaoyong; Hu, Jingguo; Chen, Zhuo

    2016-04-01

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  20. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    SciTech Connect

    Zhuang, Shendong; Tang, Nujiang; Chen, Zhuo; Chen, Yan; Xia, Yidong; Xu, Xiaoyong; Hu, Jingguo

    2016-04-15

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  1. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    DOEpatents

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  2. An Exploration of Neutron Detection in Semiconducting Boron Carbide

    NASA Astrophysics Data System (ADS)

    Hong, Nina

    The 3He supply problem in the U.S. has necessitated the search for alternatives for neutron detection. The neutron detection efficiency is a function of density, atomic composition, neutron absorption cross section, and thickness of the neutron capture material. The isotope 10B is one of only a handful of isotopes with a high neutron absorption cross section---3840 barns for thermal neutrons. So a boron carbide semiconductor represents a viable alternative to 3He. This dissertation provides an evaluation of the performance of semiconducting boron carbide neutron detectors grown by plasma enhance chemical vapor deposition (PECVD) in order to determine the advantages and drawbacks of these devices for neutron detection. Improved handling of the PECVD system has resulted in an extremely stable plasma, enabling deposition of thick films of semiconducting boron carbide. A variety of material and semiconducting characterization tools have been used to investigate the structure and electronic properties of boron carbide thin films, including X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, infrared/Raman spectroscopy, current-voltage measurements and capacitance-voltage measurements. Elemental concentrations in the boron carbide films have been obtained from Rutherford backscattering and elastic recoil detection analysis. Solid state neutron detection devices have been fabricated in the form of heterostructured p-n diodes, p-type boron carbide/n-type Si. Operating conditions, including applied bias voltage, and time constants, have been optimized for maximum detection efficiency and correlated to the semiconducting properties investigated in separate electronic measurements. Accurate measurements of the neutron detection efficiency and the response of the detector to a wide range of neutron wavelengths have been performed at a well calibrated, tightly collimated, "white" cold neutron beam source using time-of-flight neutron detection technique

  3. Nonlinear dynamics of a rack-pinion-rack device powered by the Casimir force.

    PubMed

    Miri, MirFaez; Nekouie, Vahid; Golestanian, Ramin

    2010-01-01

    Using the lateral Casimir force-a manifestation of the quantum fluctuations of the electromagnetic field between objects with corrugated surfaces-as the main force transduction mechanism, a nanomechanical device with rich dynamical behaviors is proposed. The device is made of two parallel racks that are moving in the same direction and a pinion in the middle that couples with both racks via the noncontact lateral Casimir force. The built-in frustration in the device causes it to be very sensitive and react dramatically to minute changes in the geometrical parameters and initial conditions of the system. The noncontact nature of the proposed device could help with the ubiquitous wear problem in nanoscale mechanical systems.

  4. High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy

    NASA Astrophysics Data System (ADS)

    Cho, Yasuo

    2017-10-01

    Scanning nonlinear dielectric microscopy (SNDM) can easily distinguish the dopant type (PN) and has a wide dynamic range of sensitivity from low to high concentrations of dopants, because it has a high sensitivity to capacitance variation on the order of 10‑22 F/\\sqrt{\\text{Hz}} . It is also applicable to the analysis of compound semiconductors with much lower signal levels than Si. We can avoid misjudgments from the two-valued function (contrast reversal) problem of dC/dV signals. Under an ultrahigh-vacuum condition, SNDM has atomic resolution. As the extended versions of SNDM, super-higher-order SNDM, local-deep-level transient spectroscopy, noncontact SNDM, and scanning nonlinear dielectric potentiometory have been developed and introduced. The favorable features of SNDM originate from its significantly high sensitivity.

  5. An experimentally verified model for thermal microactuators including nonlinear material properties, vacuum, and intra-device heat conduction

    NASA Astrophysics Data System (ADS)

    Colbert, Keegan; Naraghi, Mohammad; Boyd, James G.

    2017-02-01

    This paper presents a model and computational method to predict the steady-state performance of thermal flexure microactuators at high input powers and various levels of partial vacuum. The model accounts for nonlinear temperature dependence of material properties, heat loss due to radiation, and intra-device heat transfer by conduction across an air gap. The model is validated by comparing the model predictions with the experimentally measured voltage, current, and displacement at standard conditions, prior to adjusting for partial vacuum. In order to understand the effect of nonlinearities on model reliability, the predictions of six additional hypothetical models are considered where (1) intra-device heat transfer is neglected, (2) radiation is neglected, (3) the thermal conductivity of silicon is assumed to be temperature-independent, (4) the thermal conductivity of air is assumed to be temperature-independent, (5) the electrical resistivity of silicon is assumed to be linear in temperature, and (6) the thermal expansion coefficient of silicon is assumed to be temperature-independent. All factors except radiation were shown to have a significant influence on the device performance especially at high input powers. The experimentally validated full model is then employed to predict the effect of reduced air pressure on the displacement and heat transfer properties of the actuator. This aspect of the study targets applications of thermal actuators in controlled environments such as space applications, actuators used for in situ micropositioning and tensile testing inside electron microscopy chambers, or actuators incorporated into the design of MEMS resonators. It was demonstrated that the maximum actuator displacement is not a linear function of reduced pressure and that it reaches a maximum at a certain partial vacuum level.

  6. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

    PubMed Central

    Kazemi, Alireza; He, Xiang; Alaie, Seyedhamidreza; Ghasemi, Javad; Dawson, Noel Mayur; Cavallo, Francesca; Habteyes, Terefe G.; Brueck, Steven R. J.; Krishna, Sanjay

    2015-01-01

    Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K. PMID:26126936

  7. Molecular Strategies for Morphology Control in Semiconducting Polymers for Optoelectronics.

    PubMed

    Rahmanudin, Aiman; Sivula, Kevin

    2017-06-28

    Solution-processable semiconducting polymers have been explored over the last decades for their potential applications in inexpensively fabricated transistors, diodes and photovoltaic cells. However, a remaining challenge in the field is to control the solid-state self-assembly of polymer chains in thin films devices, as the aspects of (semi)crystallinity, grain boundaries, and chain entanglement can drastically affect intra-and inter-molecular charge transport/transfer and thus device performance. In this short review we examine how the aspects of molecular weight and chain rigidity affect solid-state self-assembly and highlight molecular engineering strategies to tune thin film morphology. Side chain engineering, flexibly linking conjugation segments, and block co-polymer strategies are specifically discussed with respect to their effect on field effect charge carrier mobility in transistors and power conversion efficiency in solar cells. Example systems are taken from recent literature including work from our laboratories to illustrate the potential of molecular engineering semiconducting polymers.

  8. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography.

    PubMed

    Kazemi, Alireza; He, Xiang; Alaie, Seyedhamidreza; Ghasemi, Javad; Dawson, Noel Mayur; Cavallo, Francesca; Habteyes, Terefe G; Brueck, Steven R J; Krishna, Sanjay

    2015-07-01

    Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K.

  9. A low emission, low power non-linear frequency modulation based transmitter for implanted devices.

    PubMed

    Saraswat, Ruchir; Rodriguez-Villegas, Esther

    2013-01-01

    The paper proposes a low emission, non linear frequency modulator for transmitting neural signals. With the advent of embedded medical devices, designers need to start developing low Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI) devices. We propose a non-phase locked loop based frequency modulator. The modulator utilizes a ramp to encode the bit stream from the neural amplifier. In addition it utilizes a non linear signal to modulate the encoded signal leading to lowering of peak of power spectrum, a measure of electro-magnetic interference. The proposed algorithm has been implemented on 0.18µ AMS technology and results presented.

  10. Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices

    DTIC Science & Technology

    1998-05-12

    elevated temperatures that is accompanied by a decreased film thickness. As the temperature is decreased water is reabsorbed , and the film swells to its...Vogtle, Supramolecular Chemistry; Wiley, New York, 1993. ISAM NLO Thin Films and Devices Final Report 28 [6] J. H. Fuhrhop and J. Koning, Membrane and

  11. Low dimensional semiconducting nanostructures: Stability, trends and promises

    NASA Astrophysics Data System (ADS)

    Wanaguru, Prabath

    Systematic studies of low dimensional semiconducting nanostructures have been performed. In particular, silicon-germanium (SiGe) armchair type nanotubes, and both zigzag and armchair type nanoribbons were used to represent the bottom-up approach while hematite nanoribbons were used to represent the top down approach. Four high symmetric nanostructure atomic arrangements were identified. All the SiGe nanotubes and SiGe nanoribbons show definite semiconducting character and the band gaps span over large range. Zigzag SiGe nanoribbons show direct band gap nature indicating potential applications in opto-electronic devices. Standalone SiGe nanoribbons may roll into nanotubes depending on the atomic arrangement. Li adsorption on SiGe nanotubes indicated that SiGe nanotubes have potential as anode material in Li-ion battery technology when the nanotube length is over 20 A. Most stable site for Li adsorption is Si Top site and most preferred site is Ge Top. Intrinsic puckered surface nature screen the adsorbed Li from each other and hence, increase the charge density. Hydrogen atomic adsorption increases the band gap while oxygen breaks the nanotube-wall bonds and incorporates into nanotube lattice structure. Hematite nanoribbons based on two surfaces, (110) and (104) were studied. For each surface, depending on the termination direction, it can be identified two types. Both types based on (110) surface show definite semiconducting character. One type of (104) surface based nanoribbons show surface modification while the other type obtained built-in oxygen vacancy which acquired the spin dependent transport properties and hence, possible applications in spintronics area.

  12. Nonlinear saturation of the ion-electron Buneman instability in a spherical positively pulsed gridded inertial electrostatic confinement device

    SciTech Connect

    Bandara, R.; Khachan, J.

    2015-08-15

    A pulsed, positively biased gridded inertial electrostatic confinement device has been investigated experimentally, using Doppler broadened spectra and current and voltage traces as primary diagnostics. In the high current and energy regime explored in this paper resulting from the removal of the series ballast resistance from the external biasing circuit, large amplitude oscillations in the plasma current and potential were observed within 100 ns of the discharge onset. These oscillations are attributed to the nonlinear and saturated Buneman instability, characterised by a locked oscillation frequency as a function of increasing anode potential. The saturated Buneman instability is known to exhibit ion mass independent behaviour and cause electron trapping, resulting in a transient spatio-temporal virtual cathode and ponderomotive ion confinement, as evidenced by broadened spectra when operated at high currents.

  13. Nonlinear saturation of the ion-electron Buneman instability in a spherical positively pulsed gridded inertial electrostatic confinement device

    NASA Astrophysics Data System (ADS)

    Bandara, R.; Khachan, J.

    2015-08-01

    A pulsed, positively biased gridded inertial electrostatic confinement device has been investigated experimentally, using Doppler broadened spectra and current and voltage traces as primary diagnostics. In the high current and energy regime explored in this paper resulting from the removal of the series ballast resistance from the external biasing circuit, large amplitude oscillations in the plasma current and potential were observed within 100 ns of the discharge onset. These oscillations are attributed to the nonlinear and saturated Buneman instability, characterised by a locked oscillation frequency as a function of increasing anode potential. The saturated Buneman instability is known to exhibit ion mass independent behaviour and cause electron trapping, resulting in a transient spatio-temporal virtual cathode and ponderomotive ion confinement, as evidenced by broadened spectra when operated at high currents.

  14. Piezo-phototronic effect devices

    DOEpatents

    Wang, Zhong L.; Yang, Qing

    2013-09-10

    A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

  15. Single-Crystalline Aluminum Nanostructures on a Semiconducting GaAs Substrate for Ultraviolet to Near-Infrared Plasmonics.

    PubMed

    Liu, Hsuan-Wei; Lin, Fan-Cheng; Lin, Shi-Wei; Wu, Jau-Yang; Chou, Bo-Tsun; Lai, Kuang-Jen; Lin, Sheng-Di; Huang, Jer-Shing

    2015-04-28

    Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and is superior to noble metals in natural abundance, cost, and compatibility with modern semiconductor fabrication processes. Ultrasmooth single-crystalline metallic films are beneficial for the fabrication of high-definition plasmonic nanostructures, especially complex integrated nanocircuits. The absence of surface corrugation and crystal boundaries also guarantees superior optical properties and applications in nanolasers. Here, we present UV to near-infrared plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with a molecular beam epitaxy method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and nonlinear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance, and the nanoholes are found to support both photonic modes and localized surface plasmon resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such a counterintuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on a high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices.

  16. Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

    PubMed Central

    Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

    2016-01-01

    Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces. PMID:27762315

  17. Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

    PubMed

    Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

    2015-03-25

    Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

  18. Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

    NASA Astrophysics Data System (ADS)

    Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

    2016-10-01

    Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces.

  19. Semiconducting Single-Walled Carbon Nanotubes in Solar Energy Harvesting

    DOE PAGES

    Blackburn, Jeffrey L.

    2017-06-14

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) represent a tunable model one-dimensional system with exceptional optical and electronic properties. High-throughput separation and purification strategies have enabled the integration of s-SWCNTs into a number of optoelectronic applications, including photovoltaics (PVs). In this Perspective, we discuss the fundamental underpinnings of two model PV interfaces involving s-SWCNTs. We first discuss s-SWCNT-fullerene heterojunctions where exciton dissociation at the donor-acceptor interface drives solar energy conversion. Next, we discuss charge extraction at the interface between s-SWCNTs and a photoexcited perovskite active layer. In each case, the use of highly enriched semiconducting SWCNT samples enables fundamental insights into themore » thermodynamic and kinetic mechanisms that drive the efficient conversion of solar photons into long-lived separated charges. As a result, these model systems help to establish design rules for next-generation PV devices containing well-defined organic semiconductor layers and help to frame a number of important outstanding questions that can guide future studies.« less

  20. Surface passivation of semiconducting oxides by self-assembled nanoparticles

    PubMed Central

    Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

    2016-01-01

    Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

  1. Unification of trap-limited electron transport in semiconducting polymers.

    PubMed

    Nicolai, H T; Kuik, M; Wetzelaer, G A H; de Boer, B; Campbell, C; Risko, C; Brédas, J L; Blom, P W M

    2012-10-01

    Electron transport in semiconducting polymers is usually inferior to hole transport, which is ascribed to charge trapping on isolated defect sites situated within the energy bandgap. However, a general understanding of the origin of these omnipresent charge traps, as well as their energetic position, distribution and concentration, is lacking. Here we investigate electron transport in a wide range of semiconducting polymers by current-voltage measurements of single-carrier devices. We observe for this materials class that electron transport is limited by traps that exhibit a gaussian energy distribution in the bandgap. Remarkably, the electron-trap distribution is identical for all polymers considered: the number of traps amounts to 3 × 10(23) traps per m(3) centred at an energy of ~3.6 eV below the vacuum level, with a typical distribution width of ~0.1 eV. This indicates that the electron traps have a common origin that, we suggest, is most likely related to hydrated oxygen complexes. A consequence of this finding is that the trap-limited electron current can be predicted for any polymer.

  2. Synthesis of hydrazone functionalized epoxy polymers for non-linear optical device applications

    NASA Astrophysics Data System (ADS)

    Singh, Rajendra K.

    A series of twelve, thermally crosslinkable, epoxy polymers bearing covalently attached NLO-active hydrazone chromophores were synthesized. The primary focus was on the synthesis of two series of NLO-active hydroxy functionalized hydrazone chromophores. The first series, called the monohydroxy series (Hydrazones I--VI) comprised of six monohydroxy functionalized hydrazones and the second series consisted of six dihydroxy functionalized hydrazones (Hydrazones VII--XII). These hydrazone chromophores were then grafted, via the hydroxy functionality, on to a commercial epoxy polymer to obtain twelve NLO-active soluble prepolymers. The grafting reaction yields multiple secondary hydroxyl sites due to opening of the epoxide rings and these hydroxyl groups were used for further crosslinking by formulating the prepolymers with a blocked polyisocyanate commercial crosslinker. This formulation was spin coated on glass slides to form 2--2.5 m m thick uniform, defect free, transparent films. The films were corona poled, above their Tg, to align the chromophores in a noncentrosymmetric fashion and simultaneously complete the thermal cure that results in a highly crosslinked network. Finally the thermal characteristics of the second order nonlinearity of the twelve polymers are compared to illustrate the key structure-property relationships underlying the performance of the films.

  3. A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

    SciTech Connect

    Beninato, A.; Baglio, S.; Andò, B.; Emery, T.; Bulsara, A. R.; Jenkins, C.; Palkar, V.

    2013-12-09

    Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3} shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a “blueprint” for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or “target” B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

  4. A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

    NASA Astrophysics Data System (ADS)

    Beninato, A.; Emery, T.; Baglio, S.; Andò, B.; Bulsara, A. R.; Jenkins, C.; Palkar, V.

    2013-12-01

    Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi0.7Dy0.3FeO3 shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi0.7Dy0.3FeO3, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a "blueprint" for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or "target" B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

  5. Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

    NASA Astrophysics Data System (ADS)

    Yan, Shu

    Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping

  6. Growth and study of nonlinear optical materials for frequency conversion devices with applications in defence and security

    NASA Astrophysics Data System (ADS)

    Tassev, V.; Snure, M.; Vangala, S.; Kimani, M.; Peterson, R.; Schunemann, P.

    2014-10-01

    A series of nonlinear materials including GaAs, GaP, and ZnSe have been examined to determine their suitability for non-linear frequency conversion devices (FCD) and more specifically their use as high power, compact and broadly tunable IR and THz sources for defense and security applications. The more mature GaAs was investigated to reveal the causes for the optical losses that restrict achievement of higher conversion efficiency in quasi-phasematched FCD, while the efforts with GaP were oriented in developing simple, cost effective techniques for fabrication of orientation patterned (OP) templates and optimizing the subsequent thick HVPE growth on these templates. Thus, average growth rates of 50- 70 μm/h were achieved in up to 8-hour long experiments. High optical layer quality was achieved by suitable control of the process parameters. The optimal orientation of the pattern was determined and used as essential feedback aiming to improve the template preparation. This led to the production of the first 300-400 μm thick device quality OPGaP. Efforts to suppress the parasitic nucleation during growths with longer duration or to achieve thicker layers by a 2 step growth process were also made. The main challenge with the newer candidate, OPZnSe, was to establish suitable regimes for hydrothermal growth on plain (001) ZnSe seeds grown by chemical vapor deposition. Two different temperature ranges, 330-350 °C and 290-330 °C, were investigated. The mineralized concentration was also manipulated to accelerate the growth in (111) direction and, thus, to improve the growth in (001) direction. The next material in the line is GaN. The traditional HVPE approach will be combined with a growth at low reactor pressure. Growths will be performed in the next sequence: growth on thin GaN layers grown by MOCVD on sapphire wafers, growth on half-patterned GaN templates with different orientations and, finally, growth on OPGaN templates.

  7. Optoelectronic properties of semiconducting polymers and related applications

    NASA Astrophysics Data System (ADS)

    Wang, Jian

    2000-10-01

    Since the discovery of semiconducting (conjugated) polymers in 1977 by Heeger, MacDiarmid and Shirakawa, a wide variety of electrical and optical devices have been developed using semiconducting polymers, such as light-emitting diodes, photodetectors, and fluorescent biosensors. All the devices are based on the electro-optical or optoelectronic properties of conjugated polymers. So understanding the fundamental electronic structures is of particular importance. A general picture of electronic excitation of PPV upon photoexcitation remains a subject of intense debate. I addressed this problem by studying the photoconductivity excitation profile of aligned PPV sample with polarized light parallel and perpendicular to the chain axis. The spectral signature of the exciton is observed in the excitation profile as a narrow peak that emerges just below the band edge upon increasing the external field, the defect density or the temperature. The exciton binding energy is obtained from the energy of the narrow exciton peak with respect to the band edge, and independently, from analysis of the field dependence and temperature dependence of the exciton dissociation: Eb ˜ 60 meV. The fluorescence quenching of luminescent polymers by electron acceptors through photoinduced charge transfer opens a new opportunity for conjugated polymers in biological and chemical sensors for use in medical diagnostics and toxicology. A comprehensive studies of the quenching mechanisms in two polymer:quencher systems in solutions are presented. The basic quenching mode is identified by carefully studying the buffer ions' effects, absorption profile, and temperature effects. Finally, an application of photodetector utilizing conjugated polymers is presented. A large area photodetector is demonstrated to have true color (24 bit) resolution.

  8. Growth of single crystals of organic salts with large second-order optical nonlinearities by solution processes for devices

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1995-01-01

    Data obtained from the electric field induced second harmonic generation (EFISH) and Kurtz Powder Methods will be provided to MSFC for further refinement of their method. A theoretical model for predicting the second-order nonlinearities of organic salts is being worked on. Another task is the synthesis of a number of salts with various counterions. Several salts with promising SHG activities and new salts will be tested for the presence of two crystalline forms. The materials will be recrystallized from dry and wet solvents and compared for SHG efficiency. Salts that have a high SHG efficiency and no tendency to form hydrates will be documented. The synthesis of these materials are included in this report. A third task involves method to aid in the growth of large, high quality single crystals by solution processes. These crystals will be characterized for their applicability in the fabrication of devices that will be incorporated into optical computers in future programs. Single crystals of optimum quality may be obtained by crystal growth in low-gravity. The final task is the design of a temperature lowering single crystal growth apparatus for ground based work. At least one prototype will be built.

  9. Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

    PubMed

    Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

    2014-12-10

    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

  10. Predicting X-ray absorption spectra of semiconducting polymers for electronic structure and morphology characterization

    NASA Astrophysics Data System (ADS)

    Su, Gregory; Patel, Shrayesh; Pemmaraju, C. Das; Kramer, Edward; Prendergast, David; Chabinyc, Michael

    2015-03-01

    Core-level X-ray absorption spectroscopy (XAS) reveals important information on the electronic structure of materials and plays a key role in morphology characterization. Semiconducting polymers are the active component in many organic electronics. Their electronic properties are critically linked to device performance, and a proper understanding of semiconducting polymer XAS is crucial. Techniques such as resonant X-ray scattering rely on core-level transitions to gain materials contrast and probe orientational order. However, it is difficult to identify these transitions based on experiments alone, and complementary simulations are required. We show that first-principles calculations can capture the essential features of experimental XAS of semiconducting polymers, and provide insight into which molecular model, such as oligomers or periodic boundary conditions, are best suited for XAS calculations. Simulated XAS can reveal contributions from individual atoms and be used to visualize molecular orbitals. This allows for improved characterization of molecular orientation and scattering analysis. These predictions lay the groundwork for understanding how chemical makeup is linked to electronic structure, and to properly utilize experiments to characterize semiconducting polymers.

  11. High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography.

    PubMed

    Tulevski, George S; Franklin, Aaron D; Afzali, Ali

    2013-04-23

    The isolation of semiconducting carbon nanotubes (CNTs) to ultrahigh (ppb) purity is a prerequisite for their integration into high-performance electronic devices. Here, a method employing column chromatography is used to isolate semiconducting nanotubes to 99.9% purity. The study finds that by modifying the solution preparation step, both the metallic and semiconducting fraction are resolved and elute using a single surfactant system, allowing for multiple iterations. Iterative processing enables a far more rapid path to achieving the level of purities needed for high performance computing. After a single iteration, the metallic peak in the absorption spectra is completely attenuated. Although absorption spectroscopy is typically used to characterize CNT purity, it is found to be insufficient in quantifying solutions of high purity (>98 to 99%) due to low signal-to-noise in the metallic region of ultrahigh purity solutions. Therefore, a high throughput electrical testing method was developed to quantify the degree of separation by characterizing ∼4000 field-effect transistors fabricated from the separated nanotubes after multiple iterations of the process. The separation and characterization methods described here provide a path to produce the ultrahigh purity semiconducting CNT solutions needed for high performance electronics.

  12. Ferroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers

    PubMed Central

    Fabiano, Simone; Sani, Negar; Kawahara, Jun; Kergoat, Loïg; Nissa, Josefin; Engquist, Isak; Crispin, Xavier; Berggren, Magnus

    2017-01-01

    Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is an organic mixed ion-electron conducting polymer. The PEDOT phase transports holes and is redox-active, whereas the PSS phase transports ions. When PEDOT is redox-switched between its semiconducting and conducting state, the electronic and optical properties of its bulk are controlled. Therefore, it is appealing to use this transition in electrochemical devices and to integrate those into large-scale circuits, such as display or memory matrices. Addressability and memory functionality of individual devices, within these matrices, are typically achieved by nonlinear current-voltage characteristics and bistability—functions that can potentially be offered by the semiconductor-conductor transition of redox polymers. However, low conductivity of the semiconducting state and poor bistability, due to self-discharge, make fast operation and memory retention impossible. We report that a ferroelectric polymer layer, coated along the counter electrode, can control the redox state of PEDOT. The polarization switching characteristics of the ferroelectric polymer, which take place as the coercive field is overcome, introduce desired nonlinearity and bistability in devices that maintain PEDOT in its highly conducting and fast-operating regime. Memory functionality and addressability are demonstrated in ferro-electrochromic display pixels and ferro-electrochemical transistors. PMID:28695197

  13. Low bandgap semiconducting polymers for polymeric photovoltaics.

    PubMed

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study.

  14. Hydrothermal synthetic strategies of inorganic semiconducting nanostructures.

    PubMed

    Shi, Weidong; Song, Shuyan; Zhang, Hongjie

    2013-07-07

    Because of their unique chemical and physical properties, inorganic semiconducting nanostructures have gradually played a pivotal role in a variety of research fields, including electronics, chemical reactivity, energy conversion, and optics. A major feature of these nanostructures is the quantum confinement effect, which strongly depends on their size, shape, crystal structure and polydispersity. Among all developed synthetic methods, the hydrothermal method based on a water system has attracted more and more attention because of its outstanding advantages, such as high yield, simple manipulation, easy control, uniform products, lower air pollution, low energy consumption and so on. Precise control over the hydrothermal synthetic conditions is a key to the success of the preparation of high-quality inorganic semiconducting nanostructures. In this review, only the representative hydrothermal synthetic strategies of inorganic semiconducting nanostructures are selected and discussed. We will introduce the four types of strategies based on exterior reaction system adjustment, namely organic additive- and template-free hydrothermal synthesis, organic additive-assisted hydrothermal synthesis, template-assisted hydrothermal synthesis and substrate-assisted hydrothermal synthesis. In addition, the two strategies based on exterior reaction environment adjustment, including microwave-assisted and magnetic field-assisted hydrothermal synthesis, will be also described. Finally, we conclude and give the future prospects of this research area.

  15. Nonlinear Excitation of Acoustic Modes by Large Amplitude Alfvén waves in the Large Plasma Device (LAPD)

    NASA Astrophysics Data System (ADS)

    Dorfman, S. E.; Carter, T. A.; Pribyl, P.; Tripathi, S.; Van Compernolle, B.; Vincena, S. T.; Sydora, R. D.

    2013-12-01

    Alfvén waves, a fundamental mode of magnetized plasmas, are ubiquitous in space plasmas. While the linear behavior of these waves has been extensively studied [1], non-linear effects are important in many real systems, including the solar corona and solar wind. In particular, a parametric decay process in which a large amplitude Alfvén wave decays into an ion acoustic wave and backward propagating Alfvén wave may play an important role in the coronal heating problem. Specifically, the decay of large-amplitude Alfvén waves propagating outward from the photosphere could lead to heating of the corona by the daughter ion acoustic modes [2]. As direct observational evidence of parametric decay is limited [3], laboratory experiments may play an important role in validating simple theoretical predictions and aiding in the interpretation of space measurements. Recent counter-propagating Alfvén wave experiments in the Large Plasma Device (LAPD) have recorded the first laboratory observation of the Alfvén-acoustic mode coupling at the heart of this parametric decay instability [4]. A resonance in the beat wave response produced by the two launched Alfvén waves is observed and is identified as a damped ion acoustic mode based on the measured dispersion relation. Other properties of the interaction including the spatial profile of the beat mode and response amplitude are also consistent with theoretical predictions for a three-wave interaction driven by a nonlinear ponderomotive force. Strong damping observed after the pump Alfvén waves are turned off is under investigation; a novel ion acoustic wave launcher is under development to launch the mode directly for damping studies. New experiments also aim to identify decay instabilities from a single large-amplitude Alfvén wave. In conjunction with these experiments, gyrokinetic simulation efforts are underway to scope out the relevant parameter space. [1] W. Gekelman, et. al., Phys. Plasmas 18, 055501 (2011). [2] F

  16. Organic Nonlinear Optical Materials and Devices Symposium Held in San Francisco, California on 6-9 April 1999. Volume 561

    DTIC Science & Technology

    electroluminescent materials and devices for displays. The symposium highlighted developments in materials chemistry and physics relevant to such devices and struck a balance between basic science and technology.

  17. Rapid Single-Stage Separation of Micrometer-Long and High-Purity Semiconducting Carbon Nanotubes by Gel Filtration

    NASA Astrophysics Data System (ADS)

    Thendie, Boanerges; Miyata, Yasumitsu; Kitaura, Ryo; Miyauchi, Yuhei; Matsuda, Kazunari; Shinohara, Hisanori

    2013-06-01

    We demonstrate the separation of high-purity, long semiconducting single-wall carbon nanotubes (s-SWCNTs) by single-stage gel filtration. Semiconducting SWCNTs are preferentially adsorbed on an allyl dextran-based gel column and then eluted with surfactant solution at a rate that depends on nanotube length as well as electronic type of nanotubes. These differences allow the separation of length-sorted and purity-enhanced s-SWCNTs by fractionated collection of the eluate, which provides the desired nanotubes for electronic device applications.

  18. Suppression of Nonlinear Interactions in Resonant Macroscopic Quantum Devices: The Example of the Solid-State Ring Laser Gyroscope

    SciTech Connect

    Schwartz, Sylvain; Feugnet, Gilles; Pocholle, Jean-Paul; Gutty, Francois; Bouyer, Philippe

    2008-05-09

    We report fine-tuning of nonlinear interactions in a solid-state ring laser gyroscope by vibrating the gain medium along the cavity axis. We demonstrate both experimentally and theoretically that nonlinear interactions vanish for some values of the vibration parameters, leading to quasi-ideal rotation sensing. We eventually point out that our conclusions can be mapped onto other subfields of physics such as ring-shaped superfluid configurations, where nonlinear interactions could be tuned by using Feshbach resonance.

  19. Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

    NASA Astrophysics Data System (ADS)

    Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

    2016-12-01

    We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

  20. Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phase

    NASA Astrophysics Data System (ADS)

    Busch, C.; Schierning, G.; Theissmann, R.; Nedic, A.; Kruis, F. E.; Schmechel, R.

    2012-06-01

    The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25 nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO x , and indium oxide, In2O3. The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10-6 cm2 V-1 s-1, the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.

  1. Interfacial properties of semiconducting transition metal chalcogenides

    NASA Astrophysics Data System (ADS)

    Jaegermann, W.; Tributsch, H.

    This review is aimed at the correlation of structural and electronic properies of semiconducting transition metal chalcogenides with molecular surface processes and mechanisms in photoelectrochemistry, (photo)catalysis, geochemistry and hydrometallurgy. Layer-type, pyrite structured and transition metal cluster containing chalcogenides are selected as model systems to explain the principles involved. Special emphasis is given to the discussion of materials which involve transition metal d- states in the interfacial reaction pathways of holes and electrons. Since they initiate and control heterogeneous coordination chemistry at the surfaces they may provide the possibility of tailoring selective and catalytically demanding reactions. Examples of such mechanisms are presented and discussed in relation to surface properties involved.

  2. Metallic and semiconducting nanoparticles in LCs

    NASA Astrophysics Data System (ADS)

    Sharma, Anshul; Urbanski, Martin; Mori, Taizo; Kitzerow, Heinz-S.; Hegmann, Torsten

    This chapter provides an overview of recent advances in nanoparticleliquid crystal dispersions with a particular focus on bulk versus surface effects. Surface effects will include the role of surface functionalization of metal and semiconducting nanoparticles as well as interfacial effects, alignment and anchoring in thin liquid crystal films related to nanoparticle segregation. We will also try to provide a practical guide for experimental work on nanoparticle-liquid crystal dispersions, including tips and best practices for preparing dispersions, detecting and preventing inhomogeneities as well as Dos and Don'ts for handling samples and filling test cells for electrooptic, spectroscopic, and other experiments critical for research in this area.

  3. Label-free immunodetection with CMOS-compatible semiconducting nanowires.

    PubMed

    Stern, Eric; Klemic, James F; Routenberg, David A; Wyrembak, Pauline N; Turner-Evans, Daniel B; Hamilton, Andrew D; LaVan, David A; Fahmy, Tarek M; Reed, Mark A

    2007-02-01

    Semiconducting nanowires have the potential to function as highly sensitive and selective sensors for the label-free detection of low concentrations of pathogenic microorganisms. Successful solution-phase nanowire sensing has been demonstrated for ions, small molecules, proteins, DNA and viruses; however, 'bottom-up' nanowires (or similarly configured carbon nanotubes) used for these demonstrations require hybrid fabrication schemes, which result in severe integration issues that have hindered widespread application. Alternative 'top-down' fabrication methods of nanowire-like devices produce disappointing performance because of process-induced material and device degradation. Here we report an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrate the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response. This approach eliminates the need for hybrid methods and enables system-scale integration of these sensors with signal processing and information systems. Additionally, the ability to monitor antibody binding and sense the cellular immune response in real time with readily available technology should facilitate widespread diagnostic applications.

  4. High-performance semiconducting nanotube inks: progress and prospects.

    PubMed

    Rouhi, Nima; Jain, Dheeraj; Burke, Peter John

    2011-11-22

    While the potential for high mobility printed semiconducting nanotube inks has been clear for over a decade, a myriad of scientific and technological issues has prevented commercialization and practical use. One of the most challenging scientific problems has been to understand the relationship between the pristine, individual nanotube mobility (known to be in the 10,000 cm(2)/V·s range) and the as-deposited random network mobility (recently demonstrated in the 100 cm(2)/V·s range). An additional significant scientific hurdle has been to understand, manage, and ultimately eliminate the effects of metallic nanotubes on the network performance, specifically the on/off ratio. Additional scientific progress is important in understanding the dependence of nanotube length, diameter, and density on device performance. Finally, the development of ink formulations that are of practical use in manufacturing is of paramount importance, especially with regard to drying time and uniformity, and ultimately, the issue of scalability and cost must be addressed. Many of these issues have recently been investigated from a phenomenological point of view, and a comprehensive understanding is beginning to emerge. In this paper, we present an overview of solution-based printed carbon nanotube devices and discuss long-term technology prospects. While significant technical challenges still remain, it is clear that the prospects for the use of nanotube ink in a myriad of systems is feasible given their unmatched mobility and compatibility with heterogeneous integration into a variety of applications in printed and flexible electronics.

  5. Growth, spectral, anisotropic, second and third order nonlinear optical studies on potential nonlinear optical crystal anilinium perchlorate (AP) for NLO device fabrications.

    PubMed

    Vivek, P; Suvitha, A; Murugakoothan, P

    2015-01-05

    A new semiorganic nonlinear optical material anilinium perchlorate was grown by the slow evaporation technique using water as solvent. The solubility and meta stable zone width were determined. The anilinium perchlorate crystal belongs to orthorhombic system with noncentrosymmetric space group P2₁2₁2₁. The presence of various functional groups was identified by FT-IR FT-Raman spectrum. The morphology of the anilinium perchlorate crystal was studied. From this morphology, anilinium perchlorate crystal plate was cut along three prominent planes, such as (001), (010) and (20-1). The thermal stability of the crystal was determined using TG-DTA studies. The hardness, laser damage threshold, transmittance, reflectance, experimental refractive index of the crystal was found. The particle size dependent second harmonic generation efficiency for anilinium perchlorate was evaluated by Kurtz-Perry powder method using Nd:YAG laser, which established the existence of phase matching. The third order nonlinear refractive index and nonlinear absorption coefficient of the grown crystal were measured by Z-scan studies. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Abnormal hopping conduction in semiconducting polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Park, Jeongho; Mitchel, William C.; Elhamri, Said; Grazulis, Larry; Altfeder, Igor

    2013-07-01

    We report the observation of an abnormal carrier transport phenomenon in polycrystalline semiconducting graphene grown by solid carbon source molecular beam epitaxy. At the lowest temperatures in samples with small grain size, the conduction does not obey the two-dimensional Mott-type variable-range hopping (VRH) conduction often reported in semiconducting graphene. The hopping exponent p is found to deviate from the 1/3 value expected for Mott VRH with several samples exhibiting a p=2/5 dependence. We also show that the maximum energy difference between hopping sites is larger than the activation energy for nearest-neighbor hopping, violating the assumptions of the Mott model. The 2/5 dependence more closely agrees with the quasi-one-dimensional VRH model proposed by Fogler, Teber, and Shklovskii (FTS). In the FTS model, conduction occurs by tunneling between neighboring metallic wires. We suggest that metallic edge states and conductive grain boundaries play the role of the metallic wires in the FTS model.

  7. ZnO-Decorated Carbon Nanotube Hybrids as Fillers Leading to Reversible Nonlinear I-V Behavior of Polymer Composites for Device Protection.

    PubMed

    Yang, Wenhu; Wang, Jian; Luo, Suibin; Yu, Shuhui; Huang, Haitao; Sun, Rong; Wong, Ching-Ping

    2016-12-28

    Overvoltage protection is becoming increasingly important because of miniaturization and multifunctionality of electronic devices. Flexible, easily processable materials with nonlinear and reversible I-V behavior are highly desired. In this study, hybrid nanoparticles of ZnO-decorated carbon nanotubes (CNT-ZnO) were synthesized via a sol-gel hydrothermal process employed in an epoxy matrix to prepare composites. Microstructure analysis demonstrated that ZnO nanoparticles were well-bonded to the surface of CNT. The CNT-ZnO/epoxy composites exhibited nonlinear I-V behavior under increasingly applied voltage with a nonlinear coefficient of 5.01 (10 wt % filler loading). More importantly, the composites possessed excellent reversibility from dielectric to conductor and vise versa in the recycling of increase and decrease of applied electric field, in contrast to the poor recoverability of pure CNT-filled epoxy. The mechanism of the nonlinear I-V behavior and reversibility was investigated and discussed. A simple circuit was fabricated, which verified well the protection function of the CNT-ZnO/polymer composites.

  8. Tunable surface plasmon devices

    DOEpatents

    Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

    2011-08-30

    A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

  9. Intrinsically stretchable and healable semiconducting polymer for organic transistors.

    PubMed

    Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

    2016-11-17

    Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

  10. Intrinsically stretchable and healable semiconducting polymer for organic transistors

    NASA Astrophysics Data System (ADS)

    Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

    2016-11-01

    Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

  11. Doping Scheme of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Saini, Subhash (Technical Monitor)

    1998-01-01

    Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

  12. Optical antenna effect in semiconducting nanowires.

    PubMed

    Chen, G; Wu, Jian; Lu, Qiujie; Gutierrez, H R; Xiong, Qihua; Pellen, M E; Petko, J S; Werner, D H; Eklund, P C

    2008-05-01

    We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire. The antenna effects were probed in individual NWs whose diameters are in the range 40 < d < 300 nm. The data and our calculations show that the nature of the backscattered light is critically dependent on the interplay between a photon confinement effect and bulk Raman scattering. At small diameter, d < 65 nm, the NWs are found to act like a nearly perfect dipole antenna and the bulk Raman selection rules are masked leading to a polarized scattering intensity function I R approximately cos4 theta. Underscoring the importance of this work is the realization that a fundamental understanding of the "optical antenna effect" in semiconducting NWs is essential to the analysis of all electro-optic effects in small diameter filaments.

  13. Response functions of semiconducting lithium indium diselenide

    NASA Astrophysics Data System (ADS)

    Lukosi, Eric; Chvala, Ondrej; Stowe, Ashley

    2016-06-01

    This paper presents the results of a computational investigation that determined the gamma-ray and neutron response functions of a new semiconducting material, 6LiInSe2, which is very sensitive to thermal neutrons. Both MCNP6 simulations and custom post-processing/simulation techniques were used to determine various detection properties of LISe. The computational study included consideration of energetic electron escape, the contribution from the activation of 115In and subsequent decay of 116In, triton and alpha particle escape from the 6Li reaction pathway, and the effect of incomplete charge collection when detecting neutrons via the 6Li reaction pathway. The result of neutron detection with incomplete charge collection was compared to experimental results and showed general agreement, where holes exhibit a lower mobility-lifetime product than electrons, as expected for compound semiconductors.

  14. NLO 󈨞. Nonlinear Optics: Materials, Phenomena and Devices Digest. Internation Meeting on Nonlinear Optics (1st) Held in Kauai, Hawaii on 16-20 July 1990

    DTIC Science & Technology

    1991-03-13

    are suaed to monolithic integration with waveguides and electronic devices to form complex systems. We demonstrated the first all-optical... integrated monolithically on a semiconductor wafer. Theoretical results based on a numerical model indicate that an optical signal 232 can be injected into one...signal-to-noise ratio of about 10,000 for an integration time of 125 msec (5). In terms of average power this sensitivity exceeds that of liquid helium

  15. Ferromagnetism and semiconducting of boron nanowires

    PubMed Central

    2012-01-01

    More recently, motivated by extensively technical applications of carbon nanostructures, there is a growing interest in exploring novel non-carbon nanostructures. As the nearest neighbor of carbon in the periodic table, boron has exceptional properties of low volatility and high melting point and is stronger than steel, harder than corundum, and lighter than aluminum. Boron nanostructures thus are expected to have broad applications in various circumstances. In this contribution, we have performed a systematical study of the stability and electronic and magnetic properties of boron nanowires using the spin-polarized density functional calculations. Our calculations have revealed that there are six stable configurations of boron nanowires obtained by growing along different base vectors from the unit cell of the bulk α-rhombohedral boron (α-B) and β-rhombohedral boron (β-B). Well known, the boron bulk is usually metallic without magnetism. However, theoretical results about the magnetic and electronic properties showed that, whether for the α-B-based or the β-B-based nanowires, their magnetism is dependent on the growing direction. When the boron nanowires grow along the base vector [001], they exhibit ferromagnetism and have the magnetic moments of 1.98 and 2.62 μB, respectively, for the α-c [001] and β-c [001] directions. Electronically, when the boron nanowire grows along the α-c [001] direction, it shows semiconducting and has the direct bandgap of 0.19 eV. These results showed that boron nanowires possess the unique direction dependence of the magnetic and semiconducting behaviors, which are distinctly different from that of the bulk boron. Therefore, these theoretical findings would bring boron nanowires to have many promising applications that are novel for the boron bulk. PMID:23244063

  16. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

    NASA Astrophysics Data System (ADS)

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming

    2016-03-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3- precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ~0.08 eV and show excellent thin-film transistor performance.

  17. Enhanced x-ray detection sensitivity in semiconducting polymer diodes containing metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Mills, Christopher A.; Al-Otaibi, Hulayel; Intaniwet, Akarin; Shkunov, Maxim; Pani, Silvia; Keddie, Joseph L.; Sellin, Paul J.

    2013-07-01

    Semiconducting polymer X-radiation detectors are a completely new family of low-cost radiation detectors with potential application as beam monitors or dosimeters. These detectors are easy to process, mechanically flexible, relatively inexpensive, and able to cover large areas. However, their x-ray photocurrents are typically low as, being composed of elements of low atomic number (Z), they attenuate x-rays weakly. Here, the addition of high-Z nanoparticles is used to increase the x-ray attenuation without sacrificing the attractive properties of the host polymer. Two types of nanoparticles (NPs) are compared: metallic tantalum and electrically insulating bismuth oxide. The detection sensitivity of 5 µm thick semiconducting poly([9,9-dioctylfluorenyl-2,7-diyl]-co-bithiophene) diodes containing tantalum NPs is four times greater than that for the analogous NP-free devices; it is approximately double that of diodes containing an equal volume of bismuth oxide NPs. The x-ray induced photocurrent output of the diodes increases with an increased concentration of NPs. However, contrary to the results of theoretical x-ray attenuation calculations, the experimental current output is higher for the lower-Z tantalum diodes than the bismuth oxide diodes, at the same concentration of NP loading. This result is likely due to the higher tantalum NP electrical conductivity, which increases charge transport through the semiconducting polymer, leading to increased diode conductivity.

  18. Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

    SciTech Connect

    Kang, Youngho; Song, Hochul; Han, Seungwu; Nahm, Ho-Hyun; Jeon, Sang Ho; Cho, Youngmi

    2014-03-01

    To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO{sub 4} is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO{sub 4} with the optical gap of 3.6 eV, the amorphous InGaZnO{sub 4} has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

  19. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates.

    PubMed

    Wang, Wei; Kim, Kang Lib; Cho, Suk Man; Lee, Ju Han; Park, Cheolmin

    2016-12-14

    Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

  20. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

    PubMed Central

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming

    2016-01-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3− precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance. PMID:27025784

  1. Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

    PubMed

    Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

    2015-04-21

    High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

  2. Two-dminensional exciton states in monolayer semiconducting phosphorus alotropes

    NASA Astrophysics Data System (ADS)

    Rocha, Alexandre R.; Villegas, Cesar E. P.

    During the last decade, novel two-dimensional (2D) semiconducting materials have been synthesized and characterised. As a result, there have been several theoretical and experimental proposals to incorporate 2D materials for designing next generation electronic and optoelectronics devices. In particular, it has been demonstrated that light absorption in phosphorus-based monolayers can span the whole visible spectrum, suggesting they could be used for optolectronic applications. A key ingredient for optolectronic applications is the presence of excitons and their subsequent diffusion along a donor material. This is influenced by the character of the different excitations taking place, as well as, the exciton binding energy. Therefore, In this work we use accurate many-body corrected density functional theory by means of GW-BSE methodology to elucidate the most important optical transitions, exciton energy spectrum as well as exciton extension in different types of phosphorene materials. In addition, we solve the Schrodinger equation for different 2D screened potentials and estimate the 2D exciton energy levels and radius extension. Finally, in order to assess further studies based on these systems, we provide a simple analityc expression for estimating 2D exciton energy levels. Research funded by FAPESP-Brazil.

  3. Uniformly spaced arrays of purely semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Falk, Abram; Kumar, Bharat; Tulevski, George; Farmer, Damon; Hannon, James; Han, Shu-Jen

    Patterning uniformly spaced arrays of carbon nanotubes (CNTs) is a key challenge for carbon electronics. Our group adopts a hybrid approach to meeting this goal. We use top-down lithography to pattern trenches on chips. We then use surface-selective chemical monolayers to facilitate the bottom-up assembly of solution-processed CNTs into these trenches. Previously, we showed large-scale integration of CNTs based on this approach, but modifications to this process have been needed in order to improve the yield and decrease the fraction of non-switching devices. Our latest results show a high degree of selectivity, alignment and yield of successfully placed CNTs at a 100 nm pitch. Electrical measurements confirm that these chemically placed CNTs are nearly 100% semiconducting and of similar quality to randomly dispersed ones. I will then discuss our strategies for increasing the CNT density and extending these results from chip- to wafer-scale electronics. email: alfalk@us.ibm.com.

  4. High temperature photoelectron emission and surface photovoltage in semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Williams, G. T.; Cooil, S. P.; Roberts, O. R.; Evans, S.; Langstaff, D. P.; Evans, D. A.

    2014-08-01

    A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

  5. Development of high-performing semiconducting polymers for organic electrochemical transistors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Nielsen, Christian

    2016-11-01

    The organic electrochemical transistor (OECT), capable of amplifying small electrical signals in an aqueous environment, is an ideal device to utilize in organic bioelectronic applications involving for example neural interfacing and diagnostics. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene)-based suspensions such as PEDOT:PSS and are therefore operated in depletion mode giving rise to devices that are permanently on with non-optimal operational voltage. With the aim to develop and utilize efficient accumulation mode OECT devices, we discuss here our recent results regarding the design, synthesis and performance of novel intrinsic semiconducting polymers. Covering key aspects such as ion and charge transport in the bulk semiconductor and operational voltage and stability of the materials and devices, we have elucidated important structure-property relationships. We illustrate the improvements this approach has afforded in the development of high performance accumulation mode OECT materials.

  6. Time-Domain Finite Element Analysis of Nonlinear Breakdown Problems in High-Power-Microwave Devices and Systems

    DTIC Science & Technology

    2015-12-24

    simulation of the electromagnetic- plasma interaction and the high-power microwave breakdown in air. Under the high pressure and high frequency condition of...the high-power air breakdown, the physical phenomenon is described using a nonlinearly coupled full-wave Maxwell and fluid plasma system. This...Challenges ........................................................................... 3 3.1.1 Plasma Fluid Model

  7. Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

    PubMed Central

    Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

    2009-01-01

    A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

  8. Adatom-induced local reconstructions in zigzag silicene nanoribbons: Spin semiconducting properties and large spin thermopowers

    NASA Astrophysics Data System (ADS)

    Yang, X. F.; Zou, X. L.; Kuang, Y. W.; Shao, Z. G.; Zhang, J.; Hong, X. K.; Zhang, D. B.; Feng, J. F.; Chen, X. S.; Liu, Y. S.

    2017-01-01

    Using first-principles methods, we have investigated magnetic properties and thermospin effects of zigzag silicene nanoribbons (ZSiNRs) absorbed by a single Si atom. After a relaxation, a steady dumbbell-like structure is formed, which induces a weaker antiferromagnetic (AFM) coupling between two zigzag edges. Therefore, a band gap is opened, meanwhile the adsorbed ZSiNRs show a spin semiconducting property. A large spin thermopower and weak charge thermopower in adsorbed ZSiNR-based devices can be simultaneously achieved, which is attributed to a nearly perfect mirror symmetry of spin-up and spin-down transmission spectra relative to the Fermi level.

  9. Tunable Band Gaps and Excitons in Doped Semiconducting Carbon Nanotubes Made Possible by Acoustic Plasmons

    NASA Astrophysics Data System (ADS)

    Spataru, Catalin D.; Léonard, François

    2010-04-01

    Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, band gaps and exciton binding energies can be dramatically reduced upon experimentally relevant doping, and can be tuned gradually over a broad range of energies in contrast with higher dimensional systems. The latter feature is made possible by a novel mechanism involving strong dynamical screening effects mediated by acoustic plasmons.

  10. Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

    DOEpatents

    Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

    2013-11-05

    In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating a first low frequency acoustic wave within the borehole, wherein the first low frequency acoustic wave induces a linear and a nonlinear response in one or more features in the material that are substantially perpendicular to a radius of the borehole; directing a first sequence of high frequency pulses in a direction perpendicularly with respect to the longitudinal axis of the borehole into the material contemporaneously with the first acoustic wave; and receiving one or more second high frequency pulses at one or more receivers positionable in the borehole produced by an interaction between the first sequence of high frequency pulses and the one or more features undergoing linear and nonlinear elastic distortion due to the first low frequency acoustic wave to investigate the material surrounding the borehole.

  11. Study on generation mechanisms of second-order nonlinear signals in surface acoustic wave devices and their suppression

    NASA Astrophysics Data System (ADS)

    Nakagawa, Ryo; Kyoya, Haruki; Shimizu, Hiroshi; Kihara, Takashi; Hashimoto, Ken-ya

    2015-07-01

    In this study, we examine the generation mechanisms of the second-order nonlinear signals in surface acoustic wave resonators/duplexers fabricated on a 42°YX-LiTaO3 substrate. It is shown that the crystal asymmetry of the substrate can generate the second-order nonlinear signals. The following two mechanisms mainly contribute to their generation: (a) self-mixing of the electrostatic field and (b) mixing of the electrostatic field with the strain field associated with laterally propagating modes. Both of them occur at the gaps between the electrode tip and the dummy electrode. In addition, an interdigital transducer design that cancels this asymmetry is proposed. The design is applied to a one-port resonator and a duplexer, and the effectiveness of this technique is demonstrated.

  12. Nonlinear Noise in SiGe Bipolar Devices and its Impact on Radio-Frequency Amplifier Phase Noise

    NASA Astrophysics Data System (ADS)

    Gribaldo, S.; Cibiel, G.; Llopis, O.; Graffeuil, J.

    2005-08-01

    The nonlinear behavior of different microwave SiGe bipolar transistors has been studied and models have been extracted. The phase noise of an amplifier is computed, taking into account the microwave additive noise floor and the up-converted 1/f noise. The simulation technique is a combination of different approaches available in a commercial CAD software. Theoretical results are then compared to the experiment.

  13. Novel metastable metallic and semiconducting germaniums.

    PubMed

    Selli, Daniele; Baburin, Igor A; Martoňák, Roman; Leoni, Stefano

    2013-01-01

    Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues.

  14. Novel metastable metallic and semiconducting germaniums

    PubMed Central

    Selli, Daniele; Baburin, Igor A.; Martoňák, Roman; Leoni, Stefano

    2013-01-01

    Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues. PMID:23492980

  15. Hot Electrons Regain Coherence in Semiconducting Nanowires

    NASA Astrophysics Data System (ADS)

    Reiner, Jonathan; Nayak, Abhay Kumar; Avraham, Nurit; Norris, Andrew; Yan, Binghai; Fulga, Ion Cosma; Kang, Jung-Hyun; Karzig, Toesten; Shtrikman, Hadas; Beidenkopf, Haim

    2017-04-01

    The higher the energy of a particle is above equilibrium, the faster it relaxes because of the growing phase space of available electronic states it can interact with. In the relaxation process, phase coherence is lost, thus limiting high-energy quantum control and manipulation. In one-dimensional systems, high relaxation rates are expected to destabilize electronic quasiparticles. Here, we show that the decoherence induced by relaxation of hot electrons in one-dimensional semiconducting nanowires evolves nonmonotonically with energy such that above a certain threshold hot electrons regain stability with increasing energy. We directly observe this phenomenon by visualizing, for the first time, the interference patterns of the quasi-one-dimensional electrons using scanning tunneling microscopy. We visualize the phase coherence length of the one-dimensional electrons, as well as their phase coherence time, captured by crystallographic Fabry-Pèrot resonators. A remarkable agreement with a theoretical model reveals that the nonmonotonic behavior is driven by the unique manner in which one-dimensional hot electrons interact with the cold electrons occupying the Fermi sea. This newly discovered relaxation profile suggests a high-energy regime for operating quantum applications that necessitate extended coherence or long thermalization times, and may stabilize electronic quasiparticles in one dimension.

  16. PREFACE: 16th International Conference on Microscopy of Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Walther, T.; Nellist, P. D.; Hutchison, J. L.; Cullis, A. G.

    2010-01-01

    This volume contains invited and contributed papers from the 16th international conference on 'Microscopy of Semiconducting Materials' held at the University of Oxford on 17-20 March 2009. The meeting was organised under the auspices of the Royal Microscopical Society with support by the Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. This conference series focuses on the most recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution. It was attended by 139 delegates from 18 countries world-wide. As semiconductor devices shrink further both new routes of device processing and device characterisation need to be developed, and for the latter methods that offer subnanometre spatial resolution are particularly valuable. Electron microscopy in its various forms of imaging, diffraction and spectroscopy provides indispensable information on both microstructure and chemistry. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of quantification of the various signals recorded have been presented at this conference. Two examples of topics that have attracted a number of interesting studies at this meeting are the contrast interpretation in secondary electron images of cleaved semiconductor surfaces and the measurement of chemical composition on the nano-scale of quantum domain structures and devices investigated in cross-section. Each manuscript submitted for publication in this proceedings volume has been reviewed by at least two referees and was modified accordingly. Finally, 70 manuscripts were accepted for publication. The editors are very grateful to the following colleagues for their rapid and careful reviewing of the papers: M al Jassim, J Barnard, R Beanland, H

  17. Structure and nonlinear optical properties of (E)-1-(4-aminophenyl)-3-(3-chlorophenyl) prop-2-en-1-one: A promising new D-π-A-π-D type chalcone derivative crystal for nonlinear optical devices

    NASA Astrophysics Data System (ADS)

    Ekbote, Anusha; Patil, P. S.; Maidur, Shivaraj R.; Chia, Tze Shyang; Quah, Ching Kheng

    2017-02-01

    In this paper, we present the structure and nonlinear optical (NLO) studies of a D-π-A-π-D type chalcone derivative, (E)-1-(4-aminophenyl)-3-(3-chlorophenyl) prop-2-en-1-one (abbreviated as 3CAMC). The compound was synthesized by Claisen-Schmidt condensation and single crystals were grown by slow evaporation solution growth technique. The structure was confirmed by FT-IR, 1H NMR and single-crystal X-ray diffraction techniques. The 3CAMC crystal is crystallized in the monoclinic crystal system with non-centrosymmetric space group P21 with the unit cell parameters a = 8.0013 (19) Å, b = 4.6630 (11) Å, c = 16.883 (4) Å, β = 95.568 (3)° and Z = 2. The optical absorption spectrum was recorded using UV-Vis-NIR spectrophotometer and the band gap was calculated. The title crystal has a direct band gap of 2.96 eV. TGA/DTA thermal analysis revealed that the crystal has a good thermal stability. The second harmonic generation (SHG) efficiency was investigated using the modified Kurtz-Perry powder test at 1064 nm wavelength with nanosecond (ns) laser pulses. The SHG efficiency is found to be 7 times higher than the well-studied urea. The third-order nonlinear optical properties of 3CAMC at different concentrations were investigated in DMF using Z-scan technique with continuous wave (CW) DPSS laser at 532 nm wavelength. The molecule shows a strong two-photon absorption (2PA) and significant negative nonlinear refraction characteristic (self-defocusing) in the CW regime. Further, we observed the optical limiting behavior in the compound, and evaluated the one-photon and two-photon figures of merit. The encouraging results of NLO studies suggest that the 3CAMC crystal is a promising material for photonics devices, optical switches, and optical power limiting applications.

  18. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  19. Pi-Stack Engineering of Semiconducting Perylene Tetracarboxylic Derivatives

    NASA Astrophysics Data System (ADS)

    Xue, Chenming

    D crystalline intra-layer order. Chapter 4, PDI pi-stacking order has been engineered in the crystalline phase. By introducing two structuring factors, a series of crystalline PDIs with finely tunable PDI pi-stacking order was obtained. The crystalline PDIs with exceptionally red-shifted lambda max were obtained. Several PDIs possess lambdamax values greater than any literature-reported ones. These materials can be excellent candidates in solar cell devices. In Chapter 5, new chiral main-chain PDI containing polymers were synthesized. These polymers can form intramolecular helical pi-stacks in diluted solutions. In Chapter 6, a novel synthetic route leading to unsymmetrical perylene tetracarboxylic derivatives has been developed. Based on this synthetic method, more perylene tetracarboxylic derivatives can be generated. In my research in this thesis, not only synthesis is an important part because it provides novel materials, but the characterization is critical as well. Infrared spectroscopy, Ultra-violet, fluorescence, differential scanning calorimetry, circular dichroism, polarized light microscopy, gel permeation chromatography, X-ray diffraction including both small angle and wide angle have been used. Additionally, molecular simulation is also very useful in design and obtaining details in molecular packing. Overall, the achievements in this research contribute a considerable advance in the field of generating semiconducting perylene tetracarboxylic derivatives which have versatile potential applications such as in solar cell devices, organic field effect transistors and light emitting diodes.

  20. Flow induced/ refined solution crystallization of a semiconducting polymer

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc A.

    Organic photovoltaics, a new generation of solar cells, has gained scientific and economic interests due to the ability of solution-processing and potentially low-cost power production. Though, the low power conversion efficiency of organic/ plastic solar cells is one of the most pertinent challenges that has appealed to research communities from many different fields including materials science and engineering, electrical engineering, chemical engineering, physics and chemistry. This thesis focuses on investigating and controlling the morphology of a semi-conducting, semi-crystalline polymer formed under shear-flow. Molecular structures and processing techniques are critical factors that significantly affect the morphology formation in the plastic solar cells, thus influencing device performance. In this study, flow-induced solution crystallization of poly (3-hexylthiophene) (P3HT) in a poor solvent, 2-ethylnapthalene (2-EN) was utilized to make a paint-like, structural liquid. The polymer crystals observed in this structured paint are micrometers long, nanometers in cross section and have a structure similar to that formed under quiescent conditions. There is pi-pi stacking order along the fibril axis, while polymer chain folding occurs along the fibril width and the order of the side-chain stacking is along fibril height. It was revealed that shear-flow not only induces P3HT crystallization from solution, but also refines and perfects the P3HT crystals. Thus, a general strategy to refine the semiconducting polymer crystals from solution under shear-flow has been developed and employed by simply tuning the processing (shearing) conditions with respect to the dissolution temperature of P3HT in 2-EN. The experimental results demonstrated that shear removes defects and allows more perfect crystals to be formed. There is no glass transition temperature observed in the crystals formed using the flow-induced crystallization indicating a significantly different

  1. Optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sperling, Leslie H.; Murphy, Clarence J.; Rosen, Warren A.; Jain, Himanshu

    1990-07-01

    This invention relates to acrylic polymers and more specifically to polyacrylamides and polyacrylates such as poly(2-((N-2-methyl-5-nitrophenylamino) ethyl acrylate)) and poly((N-2-methyl-4-nitrophenyl)acrylamide). These acrylic polymers are particularly useful as nonlinear optical components in various electrical devices for processing optical signals including interferometors, optical switches, optical amplifiers, generators, computational devices and the like.

  2. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  3. Third order optical non-linear (Z-scan), birefringence, photoluminescence, mechanical and etching studies on melaminium levulinate monohydrate (MLM) single crystal for optical device applications

    NASA Astrophysics Data System (ADS)

    Sivakumar, N.; Anbalagan, G.

    2016-10-01

    Z-scan studies on the grown crystal was investigated by diode-pumped Nd; YAG laser. Nonlinear refractive index (n2) and third-order nonlinear optical susceptibility (χ3) values of MLM were found to be -1.0 × 10-8 cm2/W and 1.36 × 10-6 esu respectively. Powder X-ray diffraction analysis depicted that the crystal belongs to monoclinic system with space group P21/c. Birefringence study revealed the optical dispersion behavior of MLM crystal. Linear refractive index on (10-1) plane was measured by prism coupling technique and was estimated to be 1.4705. Hardness study was carried out along three different planes which exhibit hardness anisotropy of 41.11%. Meyer's index values of the grown crystal for the (10-1), (010) and (111) planes were found to be 2.39, 2.61 and 2.04 respectively. Etching studies on the prominent (10-1) growth plane was explained by two dimensional layer growth mechanisms. Photoluminescence study was performed on MLM crystal to explore its efficacy towards optical device fabrications.

  4. Optimization of thermoelectric performance in semiconducting polymers for understanding charge transport and flexible thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Glaudell, Anne; Chabinyc, Michael

    2014-03-01

    Organic electronic materials have been widely considered for a variety of energy conversion applications, from photovoltaics to LEDs. Only very recently have organic materials been considered for thermoelectric applications - converting between temperature gradients and electrical potential. The intrinsic disorder in semiconducting polymers leads to an inherently low thermal conductivity, a key parameter in thermoelectric performance. The ability to solution deposit on flexible substrates opens up niche applications including personal cooling and conformal devices. Here work is presented on the electrical conductivity and thermopower of thin film semiconducting polymers, including P3HT and PBTTT-C14. Thermoelectric properties are explored over a wide range of conductivities, from nearly insulating to beyond 100 S/cm, enabled by employing different doping mechanisms, including molecular charge-transfer doping with F4TCNQ and vapor doping with a fluoroalkyl trichlorosilane (FTS). Temperature-dependent measurements suggest competing charge transport mechanisms, likely due to the mixed ordered/disordered character of these polymers. These results show promise for organic materials for thermoelectric applications, and recent results on thin film devices will also be presented.

  5. Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

    SciTech Connect

    Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

    2013-10-08

    In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating within a borehole an intermittent low frequency vibration that propagates as a tube wave longitudinally to the borehole and induces a nonlinear response in one or more features in the material that are substantially perpendicular to a longitudinal axis of the borehole; generating within the borehole a sequence of high frequency pulses directed such that they travel longitudinally to the borehole within the surrounding material; and receiving, at one or more receivers positionable in the borehole, a signal that includes components from the low frequency vibration and the sequence of high frequency pulses during intermittent generation of the low frequency vibration, to investigate the material surrounding the borehole.

  6. Homo and heteroepitaxial growth and study of orientation-patterned GaP for nonlinear frequency conversion devices

    NASA Astrophysics Data System (ADS)

    Tassev, V. L.; Vangala, S.; Peterson, R.; Kimani, M.; Snure, M.; Markov, I.

    2016-03-01

    Frequency conversion in orientation-patterned quasi-phase matched materials is a leading approach for generating tunable mid- and long-wave coherent IR radiation for a wide variety of applications. A number of nonlinear optical materials are currently under intensive investigation. Due to their unique properties, chiefly wide IR transparency and high nonlinear susceptibility, GaAs and GaP are among the most promising. Compared to GaAs, GaP has the advantage of having higher thermal conductivity and significantly lower 2PA in the convenient pumping range of 1- 1.7 μm. HVPE growth of OPGaP, however, has encountered certain challenges: low quality and high price of commercially available GaP wafers; and strong parasitic nucleation during HVPE growth that reduces growth rate and aggravates layer quality, often leading to pattern overgrowth. Lessons learned from growing OPGaAs were not entirely helpful, leaving us to alternative solutions for both homoepitaxial growth and template preparation. We report repeatable one-step HVPE growth of up to 400 μm thick OPGaP with excellent domain fidelity deposited for first time on OPGaAs templates. The templates were prepared by wafer fusion bonding or MBE assisted polarity inversion technique. A close to equilibrium growth at such a large lattice mismatch (-3.6%) is itself noteworthy, especially when previously reported attempts (growth of OPZnSe on OPGaAs templates) at much smaller mismatch (+0.3%) have produced limited results. Combining the advantages of the two most promising materials, GaAs and GaP, is a solution that will accelerate the development of high power, tunable laser sources for the mid- and long-wave IR, and THz region.

  7. Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

    SciTech Connect

    Fukuhara, Mikio; Yoshida, Hajime

    2014-05-15

    We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.

  8. Nonlinear diffraction in orientation-patterned semiconductors.

    PubMed

    Karpinski, Pawel; Chen, Xin; Shvedov, Vladlen; Hnatovsky, Cyril; Grisard, Arnaud; Lallier, Eric; Luther-Davies, Barry; Krolikowski, Wieslaw; Sheng, Yan

    2015-06-01

    This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinear Čerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.

  9. Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

    PubMed Central

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Hahm, Jong-in

    2015-01-01

    We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO2, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs. PMID:26549887

  10. Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

    SciTech Connect

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Hahm, Jong-in

    2015-10-12

    We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO{sub 2}, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.

  11. Semiconducting monolayer materials as a tunable platform for excitonic solar cells.

    PubMed

    Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C

    2012-11-27

    The recent advent of two-dimensional monolayer materials with tunable optical properties and high carrier mobility offers renewed opportunities for efficient, ultrathin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN and graphene (CBN) combined with commonly used acceptors such as PCBM fullerene or semiconducting carbon nanotubes can provide excitonic solar cells with tunable absorber gap, donor-acceptor interface band alignment, and power conversion efficiency, as well as novel device architectures. For the case of CBN-PCBM devices, we predict power conversion efficiency limits in the 10-20% range depending on the CBN monolayer structure. Our results demonstrate the possibility of using monolayer materials in tunable, efficient, ultrathin solar cells in which unexplored exciton and carrier transport regimes are at play.

  12. Organic semiconducting single crystals as solid-state sensors for ionizing radiation.

    PubMed

    Fraboni, Beatrice; Ciavatti, Andrea; Basiricò, Laura; Fraleoni-Morgera, Alessandro

    2014-01-01

    So far, organic semiconductors have been mainly proposed as detectors for ionizing radiation in the indirect conversion approach, i.e. as scintillators, which convert ionizing radiation into visible photons, or as photodiodes, which detect visible photons coming from a scintillator and convert them into an electrical signal. The direct conversion of ionizing radiation into an electrical signal within the same device is a more effective process than indirect conversion, since it improves the signal-to-noise ratio and it reduces the device response time. We report here the use of Organic Semiconducting Single Crystals (OSSCs) as intrinsic direct ionizing radiation detectors, thanks to their stability, good transport properties and large interaction volume. Ionizing radiation X-ray detectors, based on low-cost solution-grown OSSCs, are here shown to operate at room temperature, providing a stable linear response with increasing dose rate in the ambient atmosphere and in high radiation environments.

  13. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

    PubMed Central

    2016-01-01

    The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous environment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure–property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, electrochromic properties, operational voltage, and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT-based devices, and show stability under aqueous operation without the need for formulation additives and cross-linkers. PMID:27444189

  14. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    PubMed Central

    Comfort, Everett; Lee, Ji Ung

    2016-01-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range. PMID:27339272

  15. Semiconducting glasses: A new class of thermoelectric materials?

    SciTech Connect

    Goncalves, A.P.; Vaney, J.B.; Lenoir, B.; Piarristeguy, A.; Pradel, A.; Monnier, J.; Ochin, P.; Godart, C.

    2012-09-15

    The deeper understanding of the factors that affect the dimensionless figure of merit, ZT, and the use of new synthetic methods has recently led to the development of novel systems with improved thermoelectric performances. Albeit up to now with ZT values lower than the conventional bulk materials, semiconducting glasses have also emerged as a new family of potential thermoelectric materials. This paper reviews the latest advances on semiconducting glasses for thermoelectric applications. Key examples of tellurium-based glasses, with high Seebeck coefficients, very low thermal conductivities and tunable electrical conductivities, are presented. ZT values as high as 0.2 were obtained at room temperature for several tellurium-based glasses with high copper concentrations, confirming chalcogenide semiconducting glasses as good candidates for high-performance thermoelectric materials. However, the temperature stability and electrical conductivity of the reported glasses are still not good enough for practical applications and further studies are still needed to enhance them. - Graphical abstract: Power factor as a function of the temperature for the Cu{sub 27.5}Ge{sub 2.5}Te{sub 70} and Cu{sub 30}As{sub 15}Te{sub 55} seniconducting glasses. Highlights: Black-Right-Pointing-Pointer A review of semiconducting glasses for thermoelectrics applications is presented. Black-Right-Pointing-Pointer The studied semiconducting glasses present very low thermal conductivities. Black-Right-Pointing-Pointer Composition can tune electrical conductivity and Seebeck coefficient. Black-Right-Pointing-Pointer ZT=0.2 is obtained at 300 K for different semiconducting glasses.

  16. Recent advances in organic semiconducting materials

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2011-10-01

    Organic semiconductors have attracted attention due to their low cost, easy fabrication, and tunable properties. Applications of organic materials in thin-film transistors, solar cells, light-emitting diodes, sensors, and many other devices have been actively explored. Recent advances in organic synthesis, material processing, and device fabrication led to significant improvements in (opto)electronic device performance. However, a number of challenges remain. These range from lack of understanding of basic physics of intermolecular interactions that determine optical and electronic properties of organic materials to difficulties in controlling film morphology and stability. In this presentation, current state of the field will be reviewed and recent results related to charge carrier and exciton dynamics in organic thin films will be presented.[4pt] In collaboration with Whitney Shepherd, Mark Kendrick, Andrew Platt, Oregon State University; Marsha Loth and John Anthony, University of Kentucky.

  17. Evaluation of polarization rotation in the scattering responses from individual semiconducting oxide nanorods

    SciTech Connect

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Monahan, Brian; Hahm, Jong-in

    2016-04-15

    We investigate the interaction of visible light with the solid matters of semiconducting oxide nanorods (NRs) of zinc oxide (ZnO), indium tin oxide (ITO), and zinc tin oxide (ZTO) at the single nanomaterial level. We subsequently identify an intriguing, material-dependent phenomenon of optical rotation in the electric field oscillation direction of the scattered light by systematically controlling the wavelength and polarization direction of the incident light, the NR tilt angle, and the analyzer angle. This polarization rotation effect in the scattered light is repeatedly observed from the chemically pure and highly crystalline ZnO NRs, but absent on the chemically doped NR variants of ITO and ZTO under all measurement circumstances. We further elucidate that the phenomenon of polarization rotation detected from single ZnO NRs is affected by the NR tilt angle, while the phenomenon itself occurs irrespective of the wavelength and incident polarization direction of the visible light. Combined with the widespread optical and optoelectronic use of the semiconducting oxide nanomaterials, these efforts may provide much warranted fundamental bases to tailor material-specific, single nanomaterial-driven, optically modulating functionalities which, in turn, can be beneficial for the realization of high-performance integrated photonic circuits and miniaturized bio-optical sensing devices.

  18. 5,10-linked naphthodithiophenes as the building block for semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Osaka, Itaru; Komatsu, Koki; Koganezawa, Tomoyuki; Takimiya, Kazuo

    2014-04-01

    We present new semiconducting polymers incorporating naphtho[1, 2-b:5, 6-b‧] dithiophene (NDT3) and naphtho[2, 1-b:6, 5-b‧] dithiophene (NDT4), which are linked at the naphthalene positions, in the polymer backbone. It is interesting that the trend in the ordering structure and thus charge transport properties are quite different from what were observed in the isomeric polymers where the NDT3 and NDT4 cores are linked at the thiophene α-positions. In the thiophene-linked NDT system, the NDT3-based polymer (PNDT3BT) gave the better ordering in thin films and thus the high charge carrier mobility compared to the NDT4-based polymer (PNDT4BT). In the meantime, in the naphthalene-linked NDT system, the NDT4-based polymer (PNDT4iBT) provided the superior properties. Considering that PNDT4iBT has relatively low highest occupied molecular orbital (HOMO) energy level (-5.2 eV) and moderately high mobilities in the order of 10-2 cm2 V-1 s-1, the NDT4 core, when linked at the naphthalene positions, can be a good building unit for the development of high-performance semiconducting polymers for both organic field-effect transistors and photovoltaic devices.

  19. New anthracene-based-phtalocyanine semi-conducting materials: Synthesis and optoelectronic properties

    SciTech Connect

    Kahouech, M.S.; Hriz, K.; Touaiti, S.; Bassem, J.

    2016-03-15

    Highlights: • Synthesis of tow phtalocyanines based on the anthracene and tetrazole. • Semi-conducting supramolecular material. • Good PL quantum yield. • The film morphology of the phtalocynine containing tetrazole group enhanced the carrier mobility. - Abstract: A new anthracene-based semi-conducting phtalocyanines AnPc and AnPc-Tr were synthesized in solvent-free conditions. The supramolecular structure of these compounds was confirmed by NMR and FT-IR spectroscopies. Their optical properties were investigated by UV–vis and photoluminescence spectroscopies. The optical gaps were estimated from the absorption-onsets films, and the obtained values were of 1.50 eV and 1.47 eV for AnPc-Tr and AnPc respectively. In solid state, a weaker π–π-interactions of conjugated systems were obtained in the case of AnPc-Tr in comparison with AnPc. This behavior was explained by steric hindrance of triazol groups, which decrease the planarity of macromolecular structure. The HOMO and LUMO levels were estimated using cyclic voltammetry analysis; two phtalocyanine derivatives show a comparable ionization potential. The phtalacyanine containing triazole groups (AnPc-Tr) reveals a higher electron affinity in comparison with AnPc. Single-layer diode devices were fabricated and showed relatively low turn-on voltages.

  20. Calculating charge-carrier mobilities in disordered semiconducting polymers: Mean field and beyond

    NASA Astrophysics Data System (ADS)

    Cottaar, J.; Bobbert, P. A.

    2006-09-01

    We model charge transport in disordered semiconducting polymers by hopping of charges on a regular cubic lattice of sites. A large on-site Coulomb repulsion prohibits double occupancy of the sites. Disorder is introduced by taking random site energies from a Gaussian distribution. Recently, it was demonstrated that this model leads to a dependence of the charge-carrier mobilities on the density of charge carriers that is in agreement with experimental observations. The model is conveniently solved within a mean-field approximation, in which the correlation between the occupational probabilities of different sites is neglected. This approximation becomes exact in the limit of vanishing charge-carrier densities, but needs to be checked at high densities. We perform this check by dividing the lattice in pairs of neighboring sites and taking into account the correlation between the sites within each pair explicitly. This pair approximation is expected to account for the most important corrections to the mean-field approximation. We study the effects of varying temperature, charge-carrier density, and electric field. We demonstrate that in the parameter regime relevant for semiconducting polymers used in practical devices the corrections to the mobilities calculated from the mean-field approximation will not exceed a few percent, so that this approximation can be safely used.

  1. 5, 10-linked naphthodithiophenes as the building block for semiconducting polymers

    PubMed Central

    Osaka, Itaru; Komatsu, Koki; Koganezawa, Tomoyuki; Takimiya, Kazuo

    2014-01-01

    We present new semiconducting polymers incorporating naphtho[1, 2-b:5, 6-b′] dithiophene (NDT3) and naphtho[2, 1-b:6, 5-b′] dithiophene (NDT4), which are linked at the naphthalene positions, in the polymer backbone. It is interesting that the trend in the ordering structure and thus charge transport properties are quite different from what were observed in the isomeric polymers where the NDT3 and NDT4 cores are linked at the thiophene α-positions. In the thiophene-linked NDT system, the NDT3-based polymer (PNDT3BT) gave the better ordering in thin films and thus the high charge carrier mobility compared to the NDT4-based polymer (PNDT4BT). In the meantime, in the naphthalene-linked NDT system, the NDT4-based polymer (PNDT4iBT) provided the superior properties. Considering that PNDT4iBT has relatively low highest occupied molecular orbital (HOMO) energy level (−5.2 eV) and moderately high mobilities in the order of 10−2 cm2 V−1 s−1, the NDT4 core, when linked at the naphthalene positions, can be a good building unit for the development of high-performance semiconducting polymers for both organic field-effect transistors and photovoltaic devices. PMID:27877654

  2. Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

    DTIC Science & Technology

    2007-03-01

    a semiconducting boron carbide homojunction diode has been fabricated. This diode has potential applications in neutron detection, direct neutron ...REF-1 viii List of Figures Figure Page 1-1. Prototype handheld neutron ...to corrosive, high temperature, and mechanically abrasive environments. [1] Because 10B has a large thermal neutron capture cross section (3840

  3. Synergistic Functions of Enzymes Bound to Semiconducting Layers.

    PubMed

    Kamada, K; Yamada, A; Kamiuchi, M; Tokunaga, M; Ito, D; Soh, N

    2016-01-01

    Synthesis and cooperative functions of hybrid materials composed of enzyme and semiconducting layers are described in this chapter. The hybrids were produced via a simple physical interaction between the components, that is, electrostatic interaction in an aqueous solution. To form interstratifying enzymes in the galleries, solution pH, which is a key parameter to decide surface potential, should be adjusted appropriately. In other words, enzymes should have an opposite charge when compared to that of the layers at an identical pH. Even though the intercalation slightly reduced enzymatic activity as compared to those of the free enzymes, stability under cruel conditions was drastically improved due to screening effect of semiconducting layers from extrinsic stimuli. In addition, photochemical control of redox enzymes sandwiched between semiconducting layers was accomplished. Light irradiation of the hybrids induced band gap excitation of the layers, and holes produced in the valence band activated the enzymes. It was revealed that the semiconducting layers with magnetic elements might be useful to magnetic application (separation) of enzymes as similar to conventional magnetic beads. © 2016 Elsevier Inc. All rights reserved.

  4. Nonlinear Hysteretic Torsional Waves.

    PubMed

    Cabaret, J; Béquin, P; Theocharis, G; Andreev, V; Gusev, V E; Tournat, V

    2015-07-31

    We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters.

  5. Nonlinear Hysteretic Torsional Waves

    NASA Astrophysics Data System (ADS)

    Cabaret, J.; Béquin, P.; Theocharis, G.; Andreev, V.; Gusev, V. E.; Tournat, V.

    2015-07-01

    We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters.

  6. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  7. Superconductor-semiconductor hybrid devices, circuits, and systems

    SciTech Connect

    Kroger, H.; Hilbert, C.; Gibson, D.A.; Ghoshal, U.; Smith, L.N.

    1989-08-01

    The discovery of superconductors whose critical temperatures are above liquid nitrogen temperature has prompted considerable interest in hybrid superconducting-semiconducting electronics applications. This paper reviews the efforts to hybridize these technologies. Some of these efforts have already been demonstrated on a laboratory scale; others are at present just theoretical proposals. Hybridization is possible on the system, circuit, and device levels. The authors review studies of the applications of superconductors for interconnecting semiconductor systems and combining semiconductor and superconductor devices to enhance the performance of both digital and analog systems. Novel circuit combinations of superconducting and semiconducting devices are mentioned, as are proposal to combine these materials on the device level.

  8. Semiconducting materials for photoelectrochemical energy conversion

    NASA Astrophysics Data System (ADS)

    Sivula, Kevin; van de Krol, Roel

    2016-02-01

    To achieve a sustainable society with an energy mix primarily based on solar energy, we need methods of storing energy from sunlight as chemical fuels. Photoelectrochemical (PEC) devices offer the promise of solar fuel production through artificial photosynthesis. Although the idea of a carbon-neutral energy economy powered by such ‘artificial leaves’ is intriguing, viable PEC energy conversion on a global scale requires the development of devices that are highly efficient, stable and simple in design. In this Review, recently developed semiconductor materials for the direct conversion of light into fuels are scrutinized with respect to their atomic constitution, electronic structure and potential for practical performance as photoelectrodes in PEC cells. The processes of light absorption, charge separation and transport, and suitable energetics for energy conversion in PEC devices are emphasized. Both the advantageous and unfavourable aspects of multinary oxides, oxynitrides, chalcogenides, classic semiconductors and carbon-based semiconductors are critically considered on the basis of their experimentally demonstrated performance and predicted properties.

  9. Implication of Fluorine Atom on Electronic Properties, Ordering Structures, and Photovoltaic Performance in Naphthobisthiadiazole-Based Semiconducting Polymers.

    PubMed

    Kawashima, Kazuaki; Fukuhara, Tomohiro; Suda, Yousuke; Suzuki, Yasuhito; Koganezawa, Tomoyuki; Yoshida, Hiroyuki; Ohkita, Hideo; Osaka, Itaru; Takimiya, Kazuo

    2016-08-17

    The development of semiconducting polymers is imperative to improve the performance of polymer-based solar cells (PSCs). In this study, new semiconducting polymers based on naphtho[1,2-c:5,6-c']bis[1,2,5]thiadiazole (NTz), PNTz4TF2 and PNTz4TF4, having 3,3'-difluoro-2,2'-bithiophene and 3,3',4,4'-tetrafluoro-2,2'-bithiophene, respectively, are designed and synthesized. These polymers possess a deeper HOMO energy level than their counterpart, PNTz4T, which results in higher open-circuit voltages in solar cells. This concequently reduces the photon energy loss that is one of the most important issues surrounding PSCs. The PNTz4TF4 cell exhibits up to 6.5% power conversion efficiency (PCE), whereas the PNTz4TF2 cell demonstrates outstanding device performance with as high as 10.5% PCE, which is quite high for PSCs. We further discuss the performances of the PSCs based on these polymers by correlating the charge generation and recombination dynamics with the polymer structure and ordering structure. We believe that the results provide new insights into the design of semiconducting polymers and that there is still much room for improvement of PSC efficiency.

  10. Optimal wide-area monitoring and nonlinear adaptive coordinating neurocontrol of a power system with wind power integration and multiple FACTS devices.

    PubMed

    Qiao, Wei; Venayagamoorthy, Ganesh K; Harley, Ronald G

    2008-01-01

    Wide-area coordinating control is becoming an important issue and a challenging problem in the power industry. This paper proposes a novel optimal wide-area coordinating neurocontrol (WACNC), based on wide-area measurements, for a power system with power system stabilizers, a large wind farm and multiple flexible ac transmission system (FACTS) devices. An optimal wide-area monitor (OWAM), which is a radial basis function neural network (RBFNN), is designed to identify the input-output dynamics of the nonlinear power system. Its parameters are optimized through particle swarm optimization (PSO). Based on the OWAM, the WACNC is then designed by using the dual heuristic programming (DHP) method and RBFNNs, while considering the effect of signal transmission delays. The WACNC operates at a global level to coordinate the actions of local power system controllers. Each local controller communicates with the WACNC, receives remote control signals from the WACNC to enhance its dynamic performance and therefore helps improve system-wide dynamic and transient performance. The proposed control is verified by simulation studies on a multimachine power system.

  11. The Effect of the Semiconductive Screen on Space Charge Suppression in Cross-Linked Polyethylene

    NASA Astrophysics Data System (ADS)

    Li, Lin; Han, Bai; Song, Wei; Wang, Xuan; Lei, Qing-Quan

    2014-10-01

    The space charge distributions of cross-linked polyethylene (XLPE) with Borouge's Borlink™ semiconductive screen type LE0550 and LE0595 from a pulsed electro-acoustic method are obtained. The contact interface morphology at the semiconductive screen and the structure of XLPE near the interface are characterized. The dielectric spectrum and the conductivity current of XLPE with the different semiconductive electrodes are compared. The semiconductive screen changes the structure and the dielectric characteristic of XLPE near the contact interface, which may be the main reason for space charge suppression in XLPE with Borouge's type LE0550 semiconductive screen.

  12. Photothermoelectric effect in suspended semiconducting carbon nanotubes.

    PubMed

    Deborde, Tristan; Aspitarte, Lee; Sharf, Tal; Kevek, Joshua W; Minot, Ethan D

    2014-01-28

    We have performed scanning photocurrent microscopy measurements of field-effect transistors (FETs) made from individual ultraclean suspended carbon nanotubes (CNTs). We investigate the spatial-dependence, polarization-dependence, and gate-dependence of photocurrent and photovoltage in this system. While previous studies of surface-bound CNT FET devices have identified the photovoltaic effect as the primary mechanism of photocurrent generation, our measurements show that photothermoelectric phenomena play a critical role in the optoelectronic properties of suspended CNT FETs. We have quantified the photothermoelectric mechanisms and identified regimes where they overwhelm the photovoltaic mechanism.

  13. PREFACE: 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)

    NASA Astrophysics Data System (ADS)

    Walther, T.; Hutchison, John L.

    2013-11-01

    YRM logo This volume contains invited and contributed papers from the 18th international conference on 'Microscopy of Semiconducting Materials' held at St Catherine's College, University of Oxford, on 7-11 April 2013. The meeting was organised under the auspices of the Royal Microscopical Society and supported by the Institute of Physics as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and scanning probe microscopy with high spatial resolution. This time the meeting was attended by 109 delegates from 17 countries world-wide. We were welcomed by Professor Sir Peter Hirsch, who noted that this was the first of these conferences where Professor Tony Cullis was unable to attend, owing to ill-health. During the meeting a card containing greetings from many of Tony's friends and colleagues was signed, and duly sent to Tony afterwards. As semiconductor devices shrink further new routes for device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, electronic structure, chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two topics that have at this meeting again highlighted the interesting contributions of aberration corrected transmission electron microscopy were: contrast quantification of annular dark-field STEM images in terms of chemical composition (Z-contrast), sample thickness and strain, and the study of

  14. Charge-carrier mobilities in disordered semiconducting polymers: effects of carrier density and electric field

    NASA Astrophysics Data System (ADS)

    Meisel, K. D.; Pasveer, W. F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P. A.; Blom, P. W. M.; de Leeuw, D. M.; Michels, M. A. J.

    2006-02-01

    We model charge transport in disordered semiconducting polymers by hopping of charge carriers on a square lattice of sites with Gaussian on-site energy disorder, using Fermi-Dirac statistics. From numerically exact solutions of the Master equation, we study the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Our results are used in calculating current-voltage characteristics of hole-only polymer diodes. It is found that very good fits to experimental current-voltage characteristics can be obtained at different temperatures, with reasonable fitting parameters for the width of the Gaussian density of states and the lattice constant. In agreement with the experiments we find that the density dependence is dominant over the field dependence. Only at high fields and low temperatures the field dependence becomes noticeable. The potential and current distribution show strong inhomogeneities, which may have important consequences for the operation of polymer opto-electronic devices.

  15. Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

    NASA Astrophysics Data System (ADS)

    Pasveer, W. F.; Cottaar, J.; Tanase, C.; Coehoorn, R.; Bobbert, P. A.; Blom, P. W.; de Leeuw, D. M.; Michels, M. A.

    2005-05-01

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this unified description of the mobility. At room temperature it is mainly the dependence on carrier density that plays an important role, whereas at low temperatures and high fields the electric field dependence becomes important. Omission in the past of the carrier-density dependence has led to an underestimation of the hopping distance and the width of the density of states in these polymers.

  16. Unified description of charge-carrier mobilities in disordered semiconducting polymers.

    PubMed

    Pasveer, W F; Cottaar, J; Tanase, C; Coehoorn, R; Bobbert, P A; Blom, P W M; de Leeuw, D M; Michels, M A J

    2005-05-27

    From a numerical solution of the master equation for hopping transport in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the charge-carrier mobility on temperature, carrier density, and electric field. Experimental current-voltage characteristics in devices based on semiconducting polymers are excellently reproduced with this unified description of the mobility. At room temperature it is mainly the dependence on carrier density that plays an important role, whereas at low temperatures and high fields the electric field dependence becomes important. Omission in the past of the carrier-density dependence has led to an underestimation of the hopping distance and the width of the density of states in these polymers.

  17. Imaging Nanoscale Morphology of Semiconducting Polymer Films with Photoemission Electron Microscopy.

    PubMed

    Neff, Andreas; Niefind, Falk; Abel, Bernd; Mannsfeld, Stefan C B; Siefermann, Katrin R

    2017-08-01

    Photoemission electron microscopy in combination with polarized laser light is presented as a tool permitting direct imaging of polymer-chain orientation and local degree of order in semicrystalline samples of semiconducting polymers, a promising class of materials for future electronics. The key advantages of this imaging tool are its nondestructive and fast measurements, straightforward data analysis, the low complexity of sample preparation, and the possibility of performing measurements on a broad variety of technologically relevant substrates. The high spatial resolution of the microscope provides insights into the nanoscale morphology, which is relevant for the material's performance in electronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Color tunable light-emitting diodes based on copper doped semiconducting nanocrystals

    NASA Astrophysics Data System (ADS)

    Bhaumik, Saikat; Ghosh, Batu; Pal, Amlan J.

    2011-08-01

    We have introduced copper-doped semiconducting nanocrystals in light-emitting diodes (LEDs). Characteristics of the devices show that electroluminescence (EL) emission in these LEDs is color tunable. In copper-doped ZnS nanocrystals in the core and Zn1-xCdxS host as a shell-layer, photoluminescence (PL) arises from a transition from conduction band-edge of the host to 3d-levels of copper-ions. The PL of the nanocrystals and hence the EL of LEDs based on such nanostructures become tunable by varying the Cd-content in Zn-Cd-S alloys, that is, Zn1-xCdxS with different values of x, which changes the conduction band-edge of the host.

  19. Novel semiconducting polymers: Synthesis, characterization, and their application in organic electronics

    NASA Astrophysics Data System (ADS)

    Hubijar, Emir

    Conjugated polymers have attracted considerable attention as semiconducting materials in recent years due to their versatile electronic and optoelectronic applications. The main promise of conjugated polymers is not just attaining or exceeding the level of performance of silicon technologies but also producing electronic devices at a lower cost and enabling completely new device functionalities such as light weight, large surface area, mechanical flexibility, and optical transparency. Due to their broad potential, conjugated polymers have been incorporated in the wide range of applications, including polymer light-emitting diodes (LEDs), organic field-effect transistors (OFETs), and polymer solar cells (PSCs). Chapter 1 provides general information on conjugated polymers utilized in polymer light-emitting diodes (LEDs), polymer solar cells (PSCs) and organic field effect transistors (OFETs). It also includes brief description and schematic diagrams for each device configuration. Chapter 2 describes the synthesis, characterization and electronic properties of a novel symmetrical sulfone-substituted polyphenylene vinylene (SO 2EH-PPV) for applications in light-emitting devices. The sulfonyl functional group was directly attached to the polymer's backbone to increase the electron affinities of the polymer. The polymer was incorporated into a single layer PLED devices with the configuration of (ITO/ PEDOT:PSS/SO2EH-PPV polymer/Al). Chapter 3 focuses on the synthesis and color tuning of novel poly (fluorenevinylene-co-sulfonylphenylenevinylene) based copolymers for application in light-emitting diodes. New electroluminescent Poly(fluorenevinylene)-co-(sulfonylphenylenevinylene) random copolymers with different monomer feed ratios (PFV-SO2EH 10 and PFV-SO2EH 50) were synthesized via palladium-catalyzed Stille coupling reaction. Single layer stable PLED devices with the configuration of (ITO/PEDOT:PSS/PFV-SO 2EH 10 & PFV-SO2EH 50 polymer/Al) were fabricated exhibiting a

  20. Fluorescence quenching and excitation transfer between semiconducting and metallic organic layers

    NASA Astrophysics Data System (ADS)

    Åsberg, Peter; Nilsson, Peter; Inganäs, Olle

    2004-09-01

    Here we present a simple approach to study the interaction of singlet excitons with polarons in conjugated polymers in organic electronic devices. Interlayer quenching constants KIL of 1.5M-1 between a fluorescent molecule and a doped polymer in a layered sample demonstrates the importance of understanding the quenching of excited states in polymeric devices. A combination of Förster resonance energy transfer and quenching of photoluminescence between a fluorescent molecule and a conjugated polymer in its semiconducting and metallic states were studied. The polymer is a chiral 3-substituted polythiophene (POWT) and the fluorescent molecule is fluorescein bound to dextran (D-FITC). Bilayer samples with fluorescein on top of the POWT were fabricated and studied with absorption spectroscopy, fluorescence microscopy, and electrochemical doping methods. When POWT is electrochemically dedoped it is possible to enhance the photoluminescence in the polymer layer by excitation transfer from the fluorescein layer. Our results demonstrate that PL from the polythiophene disappears rapidly as soon as the layer is doped. As the doping of polymer layer increases the fluorescence from the fluorescein on top of the polymer decreases, due to excitation quenching. Models for excitation transfer and excitation quenching in POWT/FITC bilayer devices have been developed. This model predicts a linear relationship between the PL from the two molecules, in agreement with our experimental findings. These results are relevant for the development of electroluminescent devices or solar cells based on conjugated polymers.

  1. Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Sun, Dong; Lai, Jia-Wei; Ma, Jun-Chao; Wang, Qin-Sheng; Liu, Jing

    2017-03-01

    The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel context of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley related many particle electronic states in semiconducting monolayer transitional metal dichalcogenides.

  2. Semiconducting organic-inorganic nanocomposites by intimately tethering conjugated polymers to inorganic tetrapods

    NASA Astrophysics Data System (ADS)

    Jung, Jaehan; Yoon, Young Jun; Lin, Zhiqun

    2016-04-01

    Semiconducting organic-inorganic nanocomposites were judiciously crafted by placing conjugated polymers in intimate contact with inorganic tetrapods via click reaction. CdSe tetrapods were first synthesized by inducing elongated arms from CdSe zincblende seeds through seed-mediated growth. The subsequent effective inorganic ligand treatment, followed by reacting with short bifunctional ligands, yielded azide-functionalized CdSe tetrapods (i.e., CdSe-N3). Finally, the ethynyl-terminated conjugated polymer poly(3-hexylthiophene) (i.e., P3HT-&z.tbd;) was tethered to CdSe-N3 tetrapods via a catalyst-free alkyne-azide cycloaddition, forming intimate semiconducting P3HT-CdSe tetrapod nanocomposites. Intriguingly, the intimate contact between P3HT and CdSe tetrapod was found to not only render the effective dispersion of CdSe tetrapods in the P3HT matrix, but also facilitate the efficient electronic interaction between these two semiconducting constituents. The successful anchoring of P3HT chains onto CdSe tetrapods was substantiated through Fourier transform infrared spectroscopy and nuclear magnetic resonance spectroscopy measurements. Moreover, the absorption and photoluminescence studies further corroborated the intimate tethering between P3HT and CdSe tetrapods. The effect of the type of bifunctional ligands (i.e., aryl vs. aliphatic ligands) and the size of tetrapods on the device performance of hybrid organic-inorganic solar cells was also scrutinized. Interestingly, P3HT-CdSe tetrapod nanocomposites produced via the use of an aryl bifunctional ligand (i.e., 4-azidobenzoic acid) exhibited an improved photovoltaic performance compared to that synthesized with their aliphatic ligand counterpart (i.e., 5-bromovaleric acid). Clearly, the optimal size of CdSe tetrapods ensuring the effective charge transport in conjunction with the good dispersion of CdSe tetrapods rendered an improved device performance. We envision that the click-reaction strategy enabled by

  3. Synthesis and characterization of a novel NLO chalcone derivative: 1-(5-chlorothiophene-2-yl)-3-(4-methoxyphenyl) prop-2-en-1-one for nonlinear device application

    NASA Astrophysics Data System (ADS)

    Naik, Vasant S.; Vinitha, G.; Pragasam, A.; Shettigar, V.

    2017-08-01

    A new organic nonlinear optical single crystal of chalcone derivative, 1-(5-chlorothiophene-2-yl)-3-(4-methoxyphenyl) prop-2-en-1-one (5CT4MP) has been synthesized by slow evaporation technique. The structure of the sample has been determined by CHN analysis, FTIR and H1 NMR. The thermal stability of the grown crystal has been determined from DSC, DSC-TGA. The grown crystal has been characterized for their optical transmission. Second harmonic generation efficiency of the crystals obtained by classical powder technique using Nd:YAG laser is found out to be 1.6 times that of urea. The third order nonlinear optical parameters such as nonlinear optical susceptibility, nonlinear refractive index and nonlinear absorption coefficient have been determined by employing the Z-scan technique. The nonlinearity exhibited by these crystals is used to study the optical limiting behaviour.

  4. Excitonic absorption intensity of semiconducting and metallic carbon nanotubes.

    PubMed

    Verdenhalven, Eike; Malić, Ermin

    2013-06-19

    The knowledge of the intrinsic absorption intensity of each carbon nanotube is of crucial importance for the optical assignment of nanotube species and the estimation of their abundance in a sample. Based on a microscopic approach, we calculate excitonic absorption spectra for a variety of semiconducting and metallic nanotubes, revealing a clear diameter, chirality, and family dependence of the absorption intensity. In particular, we also study the appearance of excited excitonic transitions, which are shown to be well pronounced for semiconducting nanotubes, reaching intensities of up to 10% of the main transition. We find that nanotubes with large diameters show the most pronounced absorption intensities, confirming well the experimentally observed trend. Depending on the CNT family and transition, the absorption is enhanced or reduced with the chiral angle. This behavior reflects well the qualitative chirality dependence of the analytically derived optical matrix element.

  5. Transport properties in semiconducting NbS{sub 2} nanoflakes

    SciTech Connect

    Huang, Y. H.; Chen, R. S. Ho, C. H.; Peng, C. C.; Huang, Y. S.

    2014-09-01

    The electronic transport properties in individual niobium disulphide (NbS{sub 2}) nanoflakes mechanically exfoliated from the bulk crystal with three rhombohedral (3R) structure grown by chemical vapor transport were investigated. It is found that the conductivity values of the single-crystalline nanoflakes are approximately two orders of magnitude lower than that of their bulk counterparts. Temperature-dependent conductivity measurements show that the 3R-NbS{sub 2} nanoflakes exhibit semiconducting transport behavior, which is also different from the metallic character in the bulk crystals. In addition, the noncontinuous conductivity variations were observed at the temperature below 180 K for both the nanoflakes and the bulks, which is attributed to the probable charge density wave transition. The photoconductivities in the semiconducting nanoflakes were also observed under the excitation at 532 nm wavelength. The probable mechanisms resulting in the different transport behaviors between the NbS{sub 2} nanostructure and bulk were discussed.

  6. An alternative approach to charge transport in semiconducting electrodes

    NASA Technical Reports Server (NTRS)

    Thomchick, J.; Buoncristiani, A. M.

    1980-01-01

    The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

  7. Thiofluorographene-hydrophilic graphene derivative with semiconducting and genosensing properties.

    PubMed

    Urbanová, Veronika; Holá, Kateřina; Bourlinos, Athanasios B; Čépe, Klára; Ambrosi, Adriano; Loo, Adeline Huiling; Pumera, Martin; Karlický, František; Otyepka, Michal; Zbořil, Radek

    2015-04-08

    We present the first example of covalent chemistry on fluorographene, enabling the attachment of -SH groups through nucleophilic substitution of fluorine in a polar solvent. The resulting thiographene-like, 2D derivative is hydrophilic with semiconducting properties and bandgap between 1 and 2 eV depending on F/SH ratio. Thiofluorographene is applied in DNA biosensing by electrochemical impedance spectroscopy. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  9. Superconducting Proximity Effect in Thin Semiconducting Films

    NASA Astrophysics Data System (ADS)

    Vissers, Michael; Flexner, Soren; Welander, Paul; Inderhees, Kevin; McArdle, Tim; Eckstein, Jim

    2008-03-01

    We report results using a novel 3 terminal device structure that provides two independent resistance measurements that we use to examine the influence of the superconducting proximity effect on both the transport properties of the thin film N layer by quantifying its sheet resistance, Rs, as well as independently measuring the junction conductance across the N-S boundary, Gc. When the N layer is a degenerate semiconductor the changes in these quantities are large. Gc increases much more than the factor of 2 that Andreev Reflection or BTK theory predicts, and both Gc and Rs exhibit reentrance as temperature decreases. We interpret these effects as being due to a transition between a phase fluctuating and phase stiff proximity effect in the N layer. This manifests itself by moving the N-S electrical boundary into the semiconductor, increasing Gc, while simultaneously removing volume available to normal transport forcing the measured Rs to increase. This work was supported by the DOE BES at the F. Seitz Materials Research Laboratory at the University of Illinois, Urbana.

  10. Superconducting Proximity Effect in Thin Semiconducting Films

    NASA Astrophysics Data System (ADS)

    Vissers, Michael; Flexner, Soren; Welander, Paul; Inderhees, Kevin; Eckstein, James

    2007-03-01

    The superconducting proximity effect changes both the transport properties of the N-layer as well as the conductance between the N and S layers. We use a novel 3 terminal device structure to probe this which provides two resistance measurements allowing us to measure both the N-layer sheet resistance, Rs, as well as the junction conductance, Gc. When the N-layer is a degenerate semiconductor, the changes in these quantities are large. Gc increases much more than the factor of 2 that Andreev reflection theory predicts, and both Rs as well as Gc exhibit reentrance as a function of temperature. We interpret these changes as the N-S boundary moving into the semiconductor increasing Gc while simultaneously removing volume in the N-layer that had been used in normal transport. Magnetic fields applied both parallel and perpendicular to the junction cause the maximum conductance to increase while the sheet resistance rises. The magnitude of the necessary field implies a local proximity effect. This work was supported by the DOE BES at the F. Seitz Materials Research Laboratory at the University of Illinois, Urbana.

  11. Optics and Optoelectronics of Two-dimensional Semiconducting Monolayers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Ross, Jason Solomon

    Until recently, the physics of truly two-dimensional (2D) excitons could only be explored theoretically. Following the discovery of graphene, many 2D materials were quickly identified and isolated, one system being the semiconducting Group VI-B transition metal dichalcogenides (TMDs). These semiconductors are the first air-stable materials that are atomically thin (three atomics thick), and yet can be produced in arbitrarily large lateral sheets. They have a direct band gap in which confinement leads to large spatial overlap of electrons and holes resulting in strongly coupled excitonic transitions that dominate light-matter interactions. The direct band-gap of monolayer TMDs occurs at the corners of the hexagonal Brillouin zone, referred to as the K valleys. Entirely unique to these materials, excitons in adjacent K valleys selectively couple to light of opposite circular polarization, i.e. the K (K') valley is selective to right (left) circularly polarized photons. This property offers the possible realization of novel devices that will manipulate the valley index, known as valleytronics. Further, creating a stacked heterostructure (HS) of two TMD monolayers of different molecular species can exhibit type-II band alignment leading to the first atomically sharp built-in p-n junction and a bright interlayer exciton with long lifetimes. Being flat 2D sheets, it is easy to couple these materials to nearby systems such as microfabricated electrodes and photonic crystal cavities allowing for unique modulation and device schemes. Here, I employ both optical and electronic techniques to study the unique physics of 2D excitons in TMDs as well as demonstrate some of their first optoelectronic and valleytronic devices. The most notable achievement is perhaps the first demonstrations of both atomically thin and 2D heterostructure light emitting diodes and photovoltaic devices. Other breakthroughs include the first demonstration of exciton charging tunability in a 2D system

  12. Mesoscopic modelling of conducting and semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Stoneham, A. M.; Ramos, Marta M. D.

    2001-03-01

    We present generalized Monte Carlo calculations to assess the effects of texture and related key factors on the properties of polymer-based light emitting diodes. We describe one class of mesoscopic model giving specific realizations of the polymer network. The model, with simple physically based rules, shows the effects of polymer structural order on current flow, trapping and radiative and non-radiative charge recombination within the polymer layer. Interactions between charges are included explicitly, as are image interactions with the electrodes. It is important that these Coulomb interactions are not simplified to an averaged space charge, since the local interactions can lead to effective trapping of charge, even in the absence of defective chains or impurity trapping. There proves to be an important role for trapping, in which charges are localized for times long compared with transit times. The competition between current flow, trapping and radiative and non-radiative charge recombination means that some of the trends are not intuitively obvious. For example, if radiative recombination occurs only on short polymer chains, as is the case for certain polymer systems, the internal efficiency appears to saturate for a concentration of these shorter luminescent chains of about 20-30%. As the proportion of shorter chains increases, trapping increases, whereas current efficiency decreases. Our approach provides a natural link between atomistic models of individual polymer molecules and the macroscopic descriptions of device modelling. Such mesoscopic models provide a means to design better film structures, and hence to optimize the effectiveness of new organic materials in a range of applications.

  13. Measurements of nonlinear optical fibers

    NASA Astrophysics Data System (ADS)

    Romaniuk, Ryszard S.

    2003-10-01

    The paper is a tutorial and literature digest of chosen problems connected with specific measurement techniques of nonlinear optical fibers. Such fibers are used more and more frequently in active photonic devices and sources, nonlinear sensors and photonic functional devices. Nonlinear effects in optical fibers are also of concern in optical communications systems. This tutorial bases on (31) report and is supplemented with references digest.

  14. Polymer-Free Electronic-Grade Aligned Semiconducting Carbon Nanotube Array.

    PubMed

    Joo, Yongho; Brady, Gerald J; Kanimozhi, Catherine; Ko, Jaehyoung; Shea, Matthew J; Strand, Michael T; Arnold, Michael S; Gopalan, Padma

    2017-08-30

    Conjugated polymers are used commonly to selectively sort semiconducting carbon nanotubes (S-CNTs) from their metallic counterparts in organic solvents. The polymer-wrapped S-CNTs can be easily processed from organic solvents into arrays of CNTs for scalable device fabrication. Though the conjugated polymers are essential for sorting and device fabrication, it is highly desirable to remove them completely as they limit the electronic properties of the device. Here, we use a commercially available polymer, namely, poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(6,6'-(2,2'-bipyridine))] (PFO-BPy), to sort large-diameter S-CNTs with ultrahigh selectivity and fabricate CNT-array-based field effect transistors (FETs) via a floating evaporative self-assembly (FESA) process. We report quantitative removal of the polymer wrapper from the FESA aligned S-CNT arrays using a metal-chelation-assisted polymer removal (McAPR) process. The implementation of this process on FESA films requires the selective thermal degradation of the polymer into oligomers, combined with optimization of the solvent type and temperature of the metal complexation reaction. Resulting S-CNT array FET devices show that the electronic properties of pristine CNT are preserved through this process. Optical microscopy, UV-vis spectroscopy, and X-ray photoelectron spectroscopy (XPS) were used to characterize the quantitative polymer removal. We quantitatively describe the FET devices to analyze the fundamental characteristics of FETs (mobility (μ), on-conductance (Gon), and contact resistance (2Rc)) by comparing before and after polymer removal. The ability to completely remove the polymer wrapper in aligned CNT arrays without adversely affecting the device properties opens up applications beyond FETs into photovoltaics and biosensing.

  15. Wire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors

    NASA Astrophysics Data System (ADS)

    Murphy, Craig E.; Yang, Li; Ray, Santanu; Yu, Liyang; Knox, Steven; Stingelin, Natalie

    2011-11-01

    Organic blend thin films consisting of semiconducting poly(3-hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 × 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.

  16. Electronic structure and quantum transport properties of metallic and semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Simbeck, Adam J.

    The future of the semiconductor industry hinges upon new developments to combat the scaling issues that currently afflict two main chip components: transistors and interconnects. For transistors this means investigating suitable materials to replace silicon for both the insulating gate and the semiconducting channel in order to maintain device performance with decreasing size. For interconnects this equates to overcoming the challenges associated with copper when the wire dimensions approach the confinement limit, as well as continuing to develop low-k dielectric materials that can assure minimal cross-talk between lines. In addition, such challenges make it increasingly clear that device design must move from a top-down to a bottom-up approach in which the desired electronic characteristics are tailored from first-principles. It is with such fundamental hurdles in mind that ab initio calculations on the electronic and quantum transport properties of nanoscale metallic and semiconducting wires have been performed. More specifically, this study seeks to elaborate on the role played by confinement, contacts, dielectric environment, edge decoration, and defects in altering the electronic and transport characteristics of such systems. As experiments continue to achieve better control over the synthesis and design of nanowires, these results are expected to become increasingly more important for not only the interpretation of electronic and transport trends, but also in engineering the electronic structure of nanowires for the needs of the devices of the future. For the metallic atomic wires, the quantum transport properties are first investigated by considering finite, single-atom chains of aluminum, copper, gold, and silver sandwiched between gold contacts. Non-equilibrium Green's function based transport calculations reveal that even in the presence of the contact the conductivity of atomic-scale aluminum is greater than that of the other metals considered. This is

  17. Modeling and signal analysis of semiconducting B(5)C neutron detectors

    NASA Astrophysics Data System (ADS)

    Harken, Andrew D.

    Neutron detectors are needed for a myriad of applications ranging from military uses to power generation monitors to medical radiation therapy. Recently, a class of semiconducting boron carbide (B5C)/silicon heterojunction diodes were demonstrated to detect thermal neutrons.[1] The B5C-based devices have advantageous features of requiring low operating voltage, low power, are robust and extremely thin while maintaining detection efficiency. A simple model was developed for the analysis of the neutron capture output spectrum from the detectors, which allowed the comparison of several differing styles of planar geometry detectors. The model was also utilized to obtain the functional dependence of the device efficiencies, capture product spectral features, and the capture product energy deposition on capture layer thickness. An all-B5C device construction was determined by the model to be the most efficient form of a B5C-based detector, which reaches nearly 100% detection efficiency with a low probability of false positives. This model showed agreement with output from a full-physics simulation package, GEANT4, and experimental neutron detection spectra from a B5C/Si device. The signals generated in a B5C/Si heterojunction diode during neutron and alpha particle detection experiments were analyzed through fitting of the output current pulses and through capture output spectra. The output current pulse analysis confirmed charge generation and collection from both materials in the diode and demonstrated the suitability of the B5C material for use in an all-semiconducting B5C neutron detector. The experimental output spectra were analyzed and determined to be lower in detected capture product energy than expected, but retained the spectral features that allowed analysis of the detection results. The development of the model and the results from the particle detection experiments show great promise for the future development of B5C neutron detectors. [1]B. W. Robertson, S

  18. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE PAGES

    Ryu, H.; Lei, H.; Klobes, B.; ...

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  19. Nuclear relaxation measurements in organic semiconducting polymers for application to organic spintronics

    NASA Astrophysics Data System (ADS)

    Thenell, E. F.; Limes, M. E.; Sorte, E. G.; Vardeny, Z. V.; Saam, B.

    2015-01-01

    NMR measurements of spin-lattice relaxation of hydrogen nuclei in two prototype organic semiconducting solids, MEH-PPV and DOO-PPV, were carried out for temperatures between 4.2 K and room temperature, and for applied magnetic fields between 1.25 and 4.7 T. These π -conjugated polymers are of interest for use as the active semiconducting layer in spintronic devices. They typically exhibit weak spin-orbit coupling, and the interaction with inhomogeneous hyperfine fields generated by the nuclear spins plays a significant, if not dominant, role in the spin coherence and spin relaxation of electronic charge carriers. Our studies were conducted on unbiased bulk material with no photo-illumination. The characteristic 1H longitudinal relaxation times in these materials ranges from hundreds of milliseconds to >1000 s, and are predominantly nonmonoexponential. We present the data both in terms of a recovery time, T1 /2, corresponding to 50% recovery of thermal magnetization from saturation and in terms of a "T1 spectrum" produced via a numerical Laplace transform of the time-domain data. The evidence best supports relaxation to paramagnetic centers (radicals) mediated by nuclear spin diffusion as the primary mechanism: the observed relaxation is predominantly nonmonoexponential, and a characteristic T1 minimum as a function of temperature is apparent for both materials somewhere between 77 K and room temperature. The paramagnetic centers may be somewhat-delocalized charge-carrier pairs (i.e., polarons) along the polymer backbone, although the concentration in an unbiased sample (no carrier injection) should be very low. Alternatively, the centers may be localized defects, vacancies, or impurities. Our results may also be used to judge the feasibility of Overhauser-type dynamic nuclear polarization from polarized charge carriers or optically pumped exciton states.

  20. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  1. Electroexplosive device

    NASA Technical Reports Server (NTRS)

    Menichelli, V. J. (Inventor)

    1978-01-01

    An electroexplosive device is presented which employs a header having contact pins hermetically sealed with glass passing through from a connector end of the header to a cavity filled with a shunt layer of a new nonlinear resistive composition and a heat-sink layer of a new dielectric composition having good thermal conductivity and capacity. The nonlinear resistive layer and the heat-sink layer are prepared from materials by mixing with a low temperature polymerizing resin. The resin is dissolved in a suitable solvent and later evaporated. The resultant solid composite is ground into a powder, press formed into the header and cured (polymerized) at about 250 to 300 F.

  2. Process for separating metallic from semiconducting single-walled carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Sun, Ya-Ping (Inventor)

    2008-01-01

    A method for separating semiconducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes is disclosed. The method utilizes separation agents that preferentially associate with semiconducting nanotubes due to the electrical nature of the nanotubes. The separation agents are those that have a planar orientation, .pi.-electrons available for association with the surface of the nanotubes, and also include a soluble portion of the molecule. Following preferential association of the separation agent with the semiconducting nanotubes, the agent/nanotubes complex is soluble and can be solubilized with the solution enriched in semiconducting nanotubes while the residual solid is enriched in metallic nanotubes.

  3. Cognitive Nonlinear Radar

    DTIC Science & Technology

    2013-01-01

    Devices and Method for Detecting Emplacement of Improvised Explosive Devices, U. S. Patent 7,680,599, Mar. 16, 2010. 11. Steele, D.; Rotondo, F.; Houck...Patent 7,987,068, Jul. 26, 2011. 9 14. Keller, W. Active Improvised Explosive Device (IED) Electronic Signature Detection , U. S. Patent...operate without interfering with each other. The CNR uses a narrowband, nonlinear radar target detection methodology. This methodology has the advantage

  4. Unsymmetrical squaraines for nonlinear optical materials

    NASA Technical Reports Server (NTRS)

    Marder, Seth R. (Inventor); Chen, Chin-Ti (Inventor); Cheng, Lap-Tak (Inventor)

    1996-01-01

    Compositions for use in non-linear optical devices. The compositions have first molecular electronic hyperpolarizability (.beta.) either positive or negative in sign and therefore display second order non-linear optical properties when incorporated into non-linear optical devices.

  5. Fabrication and Characterization of Self-Aligned T-gate High-Purity Semiconducting Carbon Nanotube RF Transistors

    NASA Astrophysics Data System (ADS)

    Che, Yuchi; Badmaev, Alexander; Kim, Pyojae; Jooyaie, Alborz; Zhou, Chongwu; Chongwu Zhou's nanolab Team

    2013-03-01

    We applied the scalable self-aligned T-shaped gate design to semiconducting nanotube RF transistors. In this way, the channel length can be scaled down to 140 nm which enables quasi ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi quantum capacitance operation. As a result, our nanotube transistors exhibit excellent on-chip device performance and high linearity with channel length scaling down to 140 nm. With T-shaped gate structure, a cut-off frequency up to 22 GHz and power gain frequency of 10 GHz for separated nanotube transistor are achieved. The T-shaped gate design enables high-yield wafer-scale fabrication with controllable gate length scaling. Furthermore, we also characterized the linearity properties of nanotube transistors, with the 1-dB compression point measurement, in source/load pull setup, with positive power gain to our knowledge, for the first time. Above all, our work reveals that the semiconducting nanotube RF transistor is an interesting and promising direction in high frequency device and circuit exploration.

  6. Memory and coupling in nanocrystal optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Fairfield, Jessamyn A.

    Optoelectronic devices incorporating semiconducting nanocrystals are promising for many potential applications. Nanocrystals whose size is below the exciton Bohr radius have optical absorption and emission that is tunable with size, due to the quantum confinement of the charge carriers. However, the same confinement that yields these optical properties also makes electrical conduction in a film of nanocrystals occur via tunneling, due to the high energy barrier between nanocrystals. Hence, the extraction of photo-generated charge carriers presents a significant challenge. Several approaches to optimizing the reliability and efficiency of optoelectronic devices using semiconducting nanocrystals are explored herein. Force microscopy is used to investigate charge behavior in nanocrystal films. Plasmonic structures are lithographically defined to enhance electric field and thus charge collection efficiency in two-electrode nanocrystal devices illuminated at plasmonically resonant wavelengths. Graphene substrates are shown to couple electronically with nanocrystal films, improving device conduction while maintaining carrier quantum confinement within the nanocrystal. And finally, the occupancy of charge carrier traps is shown to both directly impact the temperature-dependent photocurrent behavior, and be tunable using a combination of illumination and electric field treatments. Trap population manipulation is robustly demonstrated and verified using a variety of wavelength, intensity, and time-dependent measurements of photocurrent in nanogap nanocrystal devices, emphasizing the importance of measurement history and the possibility of advanced device behavior tuning based on desired operating conditions. Each of these experiments reveals a path toward understanding and optimizing semiconducting nanocrystal optoelectronic devices.

  7. Electrical device fabrication from nanotube formations

    DOEpatents

    Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

    2013-03-12

    A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

  8. Annealing effects on the optical properties of semiconducting boron carbide

    SciTech Connect

    Billa, R. B.; Robertson, B. W.; Hofmann, T.; Schubert, M.

    2009-08-01

    Infrared vibrations of as-deposited and annealed semiconducting boron carbide thin films were investigated by midinfrared spectroscopic ellipsometry. The strong boron-hydrogen resonance at approx2560 cm{sup -1} in as-deposited films reveals considerable hydrogen incorporation during plasma-enhanced chemical vapor deposition. Extended annealing at 600 deg. C caused significant reduction in film thickness, substantial reduction of boron-hydrogen bond resonance absorption, and development of distinct blue-shifted boron-carbon and icosahedral vibration mode resonances. Our findings suggest that annealing results in substantial loss of hydrogen and in development of icosahedral structure, accompanied by strain relaxation and densification.

  9. Novel thiophene-containing semiconducting polymers for organic electronic applications

    NASA Astrophysics Data System (ADS)

    Hundt, Nadia Khanam

    The pi-conjugated polymers such as polythiophenes (PT's) represent a class of organic-based materials that possess unique optical and electronic properties. The electronic properties of such conjugated macromolecules are primarily governed by the chemical structure of the polymer backbone itself. Synthesizing new conjugated polymers by further functionalizing precursor monomers is an attractive route to enhance optical and electronic properties of these materials. The introduction of an unsaturated side chain will encourage solid-state pi-pi stacking and allow for facile post polymerization chemical modification. Additionally, a number of other tools can be employed in order to adjust the electronic properties of conjugated polymers. Tuning the band gap of conjugated polymers and introduction of liquid crystalline segments are two important strategies to tune the opto-electronic and physical properties of these materials. The research efforts of this thesis have been directed towards the design, synthesis, and electronic characterization of well-defined novel semiconducting thiophene-based polymers. Chapter 1 focuses on the synthesis and characterization of novel poly (3-alkenylthiophene) derivatives. The copolymers have been investigated as the active layer in organic field-effect transistors. The surface morphology of polymer films has been analyzed by AFM microscopy. Chapter 2 describes the synthesis of novel semiconducting polymers with extended electron delocalization. Semiconducting polymers containing a fused benzodithiophene core with phenylethynyl substituents were prepared and characterized. The electronic properties and morphologies of the synthesized homopolymers and copolymers containing benzodithiophene with phenylethynyl substituents were correlated with their molecular structures. The synthesized polymers have a lower band gap due to the extended electron delocalization. Chapter 3 describes the synthesis of a novel rod-rod di-block copolymer

  10. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  11. Efficiency of luminous-energy conversion in semiconducting photoelectrochemical converters

    SciTech Connect

    Kireev, V.B.; Trukhan, E.M.; Filimonov, D.A.

    1981-03-01

    Factors characterizing the conversion efficiency of luminous into chemical energy in semiconducting photoelectrochemical converters are examined. An expression for /gamma/sub //O is discussed in particular; /gamma/sub //O is the quantum yield of photocurrent of the minority carriers sustaining the reaction during which chemical energy is accumulated. The expression for /gamma/sub //O allows, both for the finite rate of electrode surface processes and for recombination in the semiconductor's space-charge layer. It is shown that over a wide range of converter parameters, recombination in the space-charge layer is one of the most important factors for the size of /gamma/sub //O. 17 refs.

  12. Ultraviolet optical absorptions of semiconducting copper phosphate glasses

    NASA Technical Reports Server (NTRS)

    Bae, Byeong-Soo; Weinberg, Michael C.

    1993-01-01

    Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

  13. Ultraviolet optical absorptions of semiconducting copper phosphate glasses

    NASA Technical Reports Server (NTRS)

    Bae, Byeong-Soo; Weinberg, Michael C.

    1993-01-01

    Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

  14. Networks of semiconducting SWNTs: contribution of midgap electronic states to the electrical transport.

    PubMed

    Itkis, Mikhail E; Pekker, Aron; Tian, Xiaojuan; Bekyarova, Elena; Haddon, Robert C

    2015-08-18

    Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300-100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the

  15. Dissociating excitons photogenerated in semiconducting carbon nanotubes at polymeric photovoltaic heterojunction interfaces.

    PubMed

    Bindl, Dominick J; Safron, Nathaniel S; Arnold, Michael S

    2010-10-26

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges, which are bound as excitons in s-SWCNTs, can be dissociated in large-area solid-state devices. Here, we measure the dissociation of excitons in s-SWCNT thin films that form planar heterojunction interfaces with polymeric photovoltaic materials using an exciton dissociation-sensitive photocapacitor measurement technique that is advantageously insensitive to optically induced thermal photoconductive effects. We find that fullerene and polythiophene derivatives induce exciton dissociation, resulting in electron and hole transfer, respectively, away from optically excited s-SWCNTs. Significantly weaker or no charge transfer is observed using wider gap polymers due to insufficient energy offsets. These results are expected to critically guide the development of thin film s-SWCNT-based photosensitive devices.

  16. Energy transfer pathways in semiconducting carbon nanotubes revealed using two-dimensional white-light spectroscopy

    NASA Astrophysics Data System (ADS)

    Mehlenbacher, Randy D.; McDonough, Thomas J.; Grechko, Maksim; Wu, Meng-Yin; Arnold, Michael S.; Zanni, Martin T.

    2015-04-01

    Thin film networks of highly purified semiconducting carbon nanotubes (CNTs) are being explored for energy harvesting and optoelectronic devices because of their exceptional transport and optical properties. The nanotubes in these films are in close contact, which permits energy to flow through the films, although the pathways and mechanisms for energy transfer are largely unknown. Here we use a broadband continuum to collect femtosecond two-dimensional white-light spectra. The continuum spans 500 to 1,300 nm, resolving energy transfer between all combinations of bandgap (S1) and higher (S2) transitions. We observe ultrafast energy redistribution on the S2 states, non-Förster energy transfer on the S1 states and anti-correlated energy levels. The two-dimensional spectra reveal competing pathways for energy transfer, with S2 excitons taking routes depending on the bandgap separation, whereas S1 excitons relax independent of the bandgap. These observations provide a basis for understanding and ultimately controlling the photophysics of energy flow in CNT-based devices.

  17. Optoelectronic properties of Mg{sub 2}Si semiconducting layers with high absorption coefficients

    SciTech Connect

    Kato, Takashi; Sago, Yuichiro; Fujiwara, Hiroyuki

    2011-09-15

    In an attempt to develop a low-cost material for solar cell devices, polycrystalline magnesium silicide (poly-Mg{sub 2}Si) semiconducting layers have been prepared by applying rf magnetron sputtering using a Mg{sub 2}Si target. The optimum substrate temperature for the poly-Mg{sub 2}Si growth was found to be T{sub s} = 200 deg. C; the film deposition at higher temperatures leads to desorption of Mg atoms from the growing surface, while the amorphous phase formation occurs at room temperature. The poly-Mg{sub 2}Si layer deposited at T{sub s} = 200 deg. C shows the (111) preferential orientation with a uniform grain size of {approx}50 nm. The dielectric function of the poly-Mg{sub 2}Si layer has been determined accurately by spectroscopic ellipsometry. From the analysis, quite high absorption coefficients and an indirect gap of 0.77 eV in the poly-Mg{sub 2}Si layer have been confirmed. The above poly-Mg{sub 2}Si layer shows clear photoconductivity and can be applied as a narrow-gap bottom layer in multi-junction solar cell devices.

  18. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

    NASA Astrophysics Data System (ADS)

    Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

    2017-07-01

    High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

  19. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se.

    PubMed

    Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H Q; Cui, Yi; Hwang, Harold Y; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

    2017-07-01

    High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ∼0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm(2) V(-1) s(-1) is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm(2) V(-1) s(-1)), large current on/off ratios (>10(6)) and near-ideal subthreshold swing values (∼65 mV dec(-1)) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

  20. Nonlinear current-voltage behavior in PZT thin films

    NASA Astrophysics Data System (ADS)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo

    2017-05-01

    In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages ( V th) increase obviously. The maximum V th value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 °C and the two-layered samples annealed at 700 °C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices.

  1. Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    DOEpatents

    Wang, Zhong L.; Xu, Sheng

    2011-08-23

    An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

  2. Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays

    NASA Astrophysics Data System (ADS)

    Li, Yingtao; Li, Rongrong; Fu, Liping; Gao, Xiaoping; Wang, Yang; Tao, Chunlan

    2015-10-01

    A crossbar array is usually used for the high-density application of a resistive random access memory (RRAM) device. However, the cross-talk interference limits the increase in the integration density. In this paper, anti-series connected Zener diodes as a selection device are proposed for bipolar RRAM arrays. Simulation results show that, by using the anti-series connected Zener diodes as a selection device, the readout margin is sufficiently improved compared to that obtained without a selection device or with anti-parallel connected diodes as the selection device. The maximum size of the crossbar arrays with anti-series connected Zener diodes as a selection device over 1 TB is estimated by theoretical simulation. In addition, the feasibility of using the anti-series connected Zener diodes as a selection device for bipolar RRAM is demonstrated experimentally. These results indicate that anti-series connected Zener diodes as a selection device opens up great opportunities to realize ultrahigh-density bipolar RRAM arrays.

  3. Exploring the influence of carboxylic acids on nonlinear optical (NLO) and dielectric properties of KDP crystal for applications of NLO facilitated photonic devices

    NASA Astrophysics Data System (ADS)

    Anis, Mohd; Muley, G. G.; Hakeem, A.; Shirsat, M. D.; Hussaini, S. S.

    2015-08-01

    The aim of present investigation is to assess the impact of oxalic acid (OA) and maleic acid (MA) on nonlinearity (second and third order) and dielectric behavior of potassium dihydrogen phosphate (KDP) crystal by means of SHG efficiency test, Z-scan analysis and dielectric studies respectively. The enhancement in SHG efficiency of OA and MA doped KDP crystal has been confirmed by means of Kurtz-Perry powder test technique. The close and open aperture Z-scan technique has been employed to study the nature and origin of improved third order NLO behavior of doped KDP crystals at 632.8 nm. The magnitude of third order nonlinear susceptibility (χ3), nonlinear refraction (n2), nonlinear absorption coefficient (β) and figure of merit (FOM) of doped KDP crystals has been calculated using the Z-scan transmittance data to explore the suitability of crystals for distinct laser assisted applications. The dielectric constant and dielectric loss of pure, OA and MA doped KDP crystals were measured at different temperatures by means of dielectric studies.

  4. Efficient Charge Extraction and Slow Recombination in Organic-Inorganic Perovskites Capped with Semiconducting Single-Walled Carbon Nanotubes

    SciTech Connect

    Ihly, Rachelle; Dowgiallo, Anne-Marie; Yang, Mengjin; Schulz, Philip; Stanton, Noah J.; Reid, Obadiah G.; Ferguson, Andrew J.; Zhu, Kai; Berry, Joseph J.; Blackburn, Jeffrey L.

    2016-04-01

    Metal-halide based perovskite solar cells have rapidly emerged as a promising alternative to traditional inorganic and thin-film photovoltaics. Although charge transport layers are used on either side of perovskite absorber layers to extract photogenerated electrons and holes, the time scales for charge extraction and recombination are poorly understood. Ideal charge transport layers should facilitate large discrepancies between charge extraction and recombination rates. Here, we demonstrate that highly enriched semiconducting single-walled carbon nanotube (SWCNT) films enable rapid (sub-picosecond) hole extraction from a prototypical perovskite absorber layer and extremely slow back-transfer and recombination (hundreds of microseconds). The energetically narrow and distinct spectroscopic signatures for charges within these SWCNT thin films enables the unambiguous temporal tracking of each charge carrier with time-resolved spectroscopies covering many decades of time. The efficient hole extraction by the SWCNT layer also improves electron extraction by the compact titanium dioxide electron transport layer, which should reduce charge accumulation at each critical interface. Finally, we demonstrate that the use of thin interface layers of semiconducting single-walled carbon nanotubes between the perovskite absorber layer and a prototypical hole transport layer improves device efficiency and stability, and reduces hysteresis.

  5. Design of Semiconducting Tetrahedral Mn1 -xZnxO Alloys and Their Application to Solar Water Splitting

    NASA Astrophysics Data System (ADS)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-04-01

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1 -xZnxO alloys. At Zn compositions above x ≈0.3 , thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.

  6. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE PAGES

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

    2015-05-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn₁₋xZnxO alloys. At Zn compositions above x ≈ 0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  7. Exfoliation of WS2 in the semiconducting phase using a group of lithium halides: a new method of Li intercalation.

    PubMed

    Ghorai, Arup; Midya, Anupam; Maiti, Rishi; Ray, Samit K

    2016-10-14

    Lithium halide assisted high yield synthesis of few layers of 2H phase semiconducting WS2 in organic solvents is reported. A group of lithium halides (LiCl, LiBr and LiI) has been employed for the first time to intercalate WS2 by using Li, followed by mild sonication to exfoliate in dispersive polar solvents. In contrast to the n-butyllithium (n-BuLi) assisted exfoliation method, which yields only the metallic 1T phase on prolonged reaction (3-7 days) at higher temperatures, the proposed exfoliation method produces only semiconducting 2H WS2 in a much shorter time (5 minute sonication). A very high yield of 19 mg ml(-1) has been obtained using LiI as an exfoliating agent due to its lower lattice energy compared to other alkali halides and the smaller size of the cation. Detailed microscopy and spectroscopic characterization reveals exfoliation of few layered WS2 with stoichiometric composition. Absorption and emission characteristics of the 2D WS2 layer exhibit a characteristic band edge and quantum confined transitions. As a proof-of-concept, we have successfully demonstrated photodetector devices comprising solution proccessed p-WS2/n-Si heterojunctions, which behave as diodes with a high rectification ratio (>10(2)) exhibiting a broad band photoresponse over the entire visible region.

  8. Design of Semiconducting Tetrahedral Mn1-xZnxO Alloys and Their Application to Solar Water Splitting

    DOE PAGES

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

    2015-03-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1₋xZnxO alloys. At Zn compositions above x≈0.3, thin films of these alloysmore » assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. In conclusion, a proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  9. Competition between deformability and charge transport in semiconducting polymers for flexible and stretchable electronics

    SciTech Connect

    Printz, Adam D.; Lipomi, Darren J.

    2016-06-15

    The primary goal of the field concerned with organic semiconductors is to produce devices with performance approaching that of silicon electronics, but with the deformability—flexibility and stretchability—of conventional plastics. However, an inherent competition between deformability and charge transport has long been observed in these materials, and achieving the extreme (or even moderate) deformability implied by the word “plastic” concurrently with high charge transport may be elusive. This competition arises because the properties needed for high carrier mobilities—e.g., rigid chains in π-conjugated polymers and high degrees of crystallinity in the solid state—are antithetical to deformability. On the device scale, this competition can lead to low-performance yet mechanically robust devices, or high-performance devices that fail catastrophically (e.g., cracking, cohesive failure, and delamination) under strain. There are, however, some observations that contradict the notion of the mutual exclusivity of electronic and mechanical performances. These observations suggest that this problem may not be a fundamental trade-off, but rather an inconvenience that may be negotiated by a logical selection of materials and processing conditions. For example, the selection of the poly(3-alkylthiophene) with a critical side-chain length—poly(3-heptylthiophene) (n = 7)—marries the high deformability of poly(3-octylthiophene) (n = 8) with the high electronic performance (as manifested in photovoltaic efficiency) of poly(3-hexylthiophene) (n = 6). This review explores the relationship between deformability and charge transport in organic semiconductors. The principal conclusions are that reducing the competition between these two parameters is in fact possible, with two demonstrated routes being: (1) incorporation of softer, insulating material into a stiffer, semiconducting material and (2) increasing disorder in a highly ordered film, but not

  10. High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

    PubMed

    Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

    2017-09-13

    Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

  11. Emissivity and electrooptical properties of semiconducting quantum dots/rods and liquid crystal composites: a review

    NASA Astrophysics Data System (ADS)

    Singh, Gautam; Fisch, Michael; Kumar, Satyendra

    2016-05-01

    Investigations of the mixtures of semiconducting quantum scale particles in anisotropic liquid crystal (LC) medium have become a vibrant area of research primarily due to their very interesting phenomenology. The results of these investigations fall into four groups: (i) Photoluminescent emissive properties of the quantum particles ordinarily depend on the size, shape, and chemical nature of the particles. These undergo important changes in their spectrum, polarization, and isotropy of emission when dissolved in an anisotropic LC phase. Moreover, their response to external stimuli such as mechanical, optical, or electric fields is altered in important ways; (ii) physical properties of LCs such as viscosity, dielectric relaxation, etc are modified by the addition of quantum particles. Their presence in ferroelectric smectic LC is known to give rise to an antiferro- to ferri-electric phase transition and suppresses the paraelectric phase; (iii) switching characteristics of LC devices are altered in important ways by the addition of quantum particles. Their threshold voltage is usually lowered, contrast ratio, and switching speed of nematic, ferroelectric, and cholesteric devices may increase or decrease depending on the concentration, applied field, and particle anisotropy; and (iv) controlled aggregation of quantum particles at the interface between isotropic and LC domains, near added polystyrene beads, and in the vicinity of point defects gives rise to interesting photonic structures, enables studies of photon antibunching and single photon sources. Clearly, there is a need to understand the basic and applied aspects of these systems and find routes to their technological applications including sensors, electrooptical devices, and solar energy harvesting. This review provides an overview of recent work involving liquid crystals and a variety of quantum particles.

  12. Polar optical phonons in semiconducting CdS nanocrystals

    SciTech Connect

    Belogorokhov, A. I. Belogorokhov, I. A.; Miranda, R. P.; Vasilevskii, M. I.; Gavrilov, S. A.

    2007-02-15

    We have experimentally and theoretically studied IR-active optical phonons, which are spatially confined in the volume of semiconducting CdS nanocrystals of various shapes synthesized in a dielectric matrix (porous aluminum oxide). Within an approach admitting the mixing of all expected types of vibrations, the complete sets of phonon modes are determined for a spherical quantum dot (QD) and a cylindrical quantum wire (QW) in this matrix. Based on these results, the polarizability spectra of QDs and QWs, as well as the effective dielectric function of a composite material containing such nanoparticles, are calculated for the far-IR wavelength range. It is established that the spectrum of the dielectric function exhibits specific features in the region between the transverse and longitudinal optical phonon frequencies of the massive semiconductor material. These features explain the rather unusual structure of the IR spectra of the composite samples studied.

  13. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  14. Amplified spontaneous emission properties of semiconducting organic materials.

    PubMed

    Calzado, Eva M; Boj, Pedro G; Díaz-García, María A

    2010-06-18

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature.

  15. Activated singlet exciton fission in a semiconducting polymer.

    PubMed

    Musser, Andrew J; Al-Hashimi, Mohammed; Maiuri, Margherita; Brida, Daniele; Heeney, Martin; Cerullo, Giulio; Friend, Richard H; Clark, Jenny

    2013-08-28

    Singlet exciton fission is a spin-allowed process to generate two triplet excitons from a single absorbed photon. This phenomenon offers great potential in organic photovoltaics, but the mechanism remains poorly understood. Most reports to date have addressed intermolecular fission within small-molecular crystals. However, through appropriate chemical design chromophores capable of intramolecular fission can also be produced. Here we directly observe sub-100 fs activated singlet fission in a semiconducting poly(thienylenevinylene). We demonstrate that fission proceeds directly from the initial 1Bu exciton, contrary to current models that involve the lower-lying 2Ag exciton. In solution, the generated triplet pairs rapidly recombine and decay through the 2Ag state. In films, exciton diffusion breaks this symmetry and we observe long-lived triplets which form charge-transfer states in photovoltaic blends.

  16. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    DOE PAGES

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; ...

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate thatmore » phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

  17. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    SciTech Connect

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui -Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong -Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  18. Amplified Spontaneous Emission Properties of Semiconducting Organic Materials

    PubMed Central

    Calzado, Eva M.; Boj, Pedro G.; Díaz-García, María A.

    2010-01-01

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature. PMID:20640167

  19. Polaron spin echo envelope modulations in an organic semiconducting polymer

    DOE PAGES

    Mkhitaryan, V. V.; Dobrovitski, V. V.

    2017-06-01

    Here, we present a theoretical analysis of the electron spin echo envelope modulation (ESEEM) spectra of polarons in semiconducting π -conjugated polymers. We show that the contact hyperfine coupling and the dipolar interaction between the polaron and the proton spins give rise to different features in the ESEEM spectra. Our theory enables direct selective probe of different groups of nuclear spins, which affect the polaron spin dynamics. Namely, we demonstrate how the signal from the distant protons (coupled to the polaron spin via dipolar interactions) can be distinguished from the signal coming from the protons residing on the polaron sitemore » (coupled to the polaron spin via contact hyperfine interaction). We propose a method for directly probing the contact hyperfine interaction, that would enable detailed study of the polaron orbital state and its immediate environment. Lastly, we also analyze the decay of the spin echo modulation, and its connection to the polaron transport.« less

  20. Temperature effects on electrical transport in semiconducting nanoporous carbon nanowires

    NASA Astrophysics Data System (ADS)

    Samuel, B. A.; Rajagopalan, R.; Foley, H. C.; Haque, M. A.

    2008-07-01

    In this paper we report on the effect of temperature on the electrical conductivity of amorphous and nanoporous (pores size around 0.5 nm) carbon nanowires. Poly(furfuryl alcohol) nanowires with diameter varying from 150 to 250 nm were synthesized by a template-based technique and upon pyrolysis yielded amorphous carbon nanowires with nanosized pores in them. We observed significant (as high as 700%) decrease in electrical resistance when the nanowire surface temperature was increased from room temperature to 160 °C. On the basis of the experimental and microscopy evidence, we infer a thermally activated carrier transport mechanism to be the primary electrical transport mechanism, at elevated temperatures, in these semiconducting, amorphous, and nanoporous carbon nanowires.

  1. Electrodeposition and characterization of CdSe semiconducting nanowires.

    PubMed

    Yu-Zhang, K; Guo, D Z; Mallet, J; Molinari, M; Loualiche, A; Troyon, M

    2008-04-01

    In this paper, we present our work on the electrodeposited CdSe semiconducting nanowires. Using a low cost and low temperature approach by electrochemistry, CdSe nanowires were successfully grown using polycarbonate template. Depending on the host pore dimension of the substrate, wire diameter can be varied from 400 nm down to 30 nm and wire length from a few microns to tens microns. The as-deposited nanowires exhibit predominantly metastable zinc blende (ZB) structure but after the heat treatment they become wurtzite (W) structure. A combination of different characterization techniques, such as X-ray diffraction, SEM, TEM-HRTEM and EDXS, was used to investigate the growth morphology, crystalline structure and defects in the nanowires. The luminescent properties of CdSe nanowires have also been studied by means of photoluminescence.

  2. Spatially Separated Spin Carriers in Spin-Semiconducting Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Wang, Z. F.; Jin, Shuo; Liu, Feng

    2013-08-01

    A graphene nanoribbon with sawtooth edges has a ferromagnetic ground state. Using first-principles and tight-binding model calculations, we show that, under a transverse electrical field, the sawtooth graphene nanoribbons become a spin semiconductor whose charge carriers are not only spin polarized in energy space but also spatially separated at different edges. Low-energy excitation produces spin-up electrons localized at one edge and spin-down holes at the opposite edge, and the excitation energy of spin carries can be tuned by the electric field to reach a new state of spin gapless semiconductor. Also, the spin semiconducting states are shown to be robust against at least 10% edge disorder. These features demonstrate a good tunability of spin carriers for spintronics applications.

  3. Spatially Separated Spin Carriers in Spin-Semiconducting Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Wang, Zhengfei; Jin, Shuo; Liu, Feng

    2014-03-01

    A graphene nanoribbon with sawtooth edges has a ferromagnetic ground state. Using first-principles and tight-binding model calculations, we show that, under a transverse electrical field, the sawtooth graphene nanoribbons become a spin semiconductor whose charge carriers are not only spin polarized in energy space but also spatially separated at different edges. Low-energy excitation produces spin-up electrons localized at one edge and spin-down holes at the opposite edge, and the excitation energy of spin carries can be tuned by the electric field to reach a new state of spin gapless semiconductor. Also, the spin semiconducting states are shown to be robust against at least 10% edge disorder. These features demonstrate a good tunability of spin carriers for spintronics applications. This work was supported by DOE-BES (No. DE-FG02-04ER46148) and NSF-MRSEC (No. DMR-1121252).

  4. Method and apparatus for casting conductive and semiconductive materials

    DOEpatents

    Ciszek, Theodore F.

    1986-01-01

    A method and apparatus is disclosed for casting conductive and semiconduce materials. The apparatus includes a plurality of conductive members arranged to define a container-like area having a desired cross-sectional shape. A portion or all of the conductive or semiconductive material which is to be cast is introduced into the container-like area. A means is provided for inducing the flow of an electrical current in each of the conductive members, which currents act collectively to induce a current flow in the material. The induced current flow through the conductive members is in a direction substantially opposite to the induced current flow in the material so that the material is repelled from the conductive members during the casting process.

  5. Technique for mapping the spectral uniformity of luminescent semiconducting material.

    PubMed

    Yang, J; Cassidy, D T

    1995-08-01

    A technique to map the spectral uniformity of luminescent semiconducting materials at room temperature is described. This technique is based on spatially resolved and polarization-resolved measurements of the photoluminescence and requires a polarizing beam splitter with a splitting ratio that has a linear dependence on wavelength. Measurements on a quantum-well sample that was patterned by intermixing with a focused ion beam are used to demonstrate the technique. With a spectral resolution of better than 1 nm and a spatial resolution of ≊1 µm, as well as the ability to map concurrently the strain field through the measurement of the degree of polarization of the photoluminescence and the photoluminescence yield, this technique provides a simple, nondestructive method of assessing luminescent materials.

  6. Quantum capacitance modifies interionic interactions in semiconducting nanopores

    NASA Astrophysics Data System (ADS)

    Lee, Alpha A.; Vella, Dominic; Goriely, Alain

    2016-02-01

    Nanopores made with low-dimensional semiconducting materials, such as carbon nanotubes and graphene slit pores, are used in supercapacitors. For modelling purposes, it is often assumed that such pores screen ion-ion interactions like metallic pores, i.e. that screening leads to an exponential decay of the interaction potential with ion separation. By introducing a quantum capacitance that accounts for the density of states in the material, we show that ion-ion interactions in carbon nanotubes and graphene slit pores actually decay algebraically with ion separation. This result suggests a new avenue of capacitance optimization based on tuning the electronic structure of a pore: a marked enhancement in capacitance might be achieved by developing nanopores made with metallic materials or bulk semimetallic materials.

  7. Substrate-induced Band Gap Renormalization in Semiconducting Carbon Nanotubes

    PubMed Central

    Lanzillo, Nicholas A.; Kharche, Neerav; Nayak, Saroj K.

    2014-01-01

    The quasiparticle band gaps of semiconducting carbon nanotubes (CNTs) supported on a weakly-interacting hexagonal boron nitride (h-BN) substrate are computed using density functional theory and the GW Approximation. We find that the direct band gaps of the (7,0), (8,0) and (10,0) carbon nanotubes are renormalized to smaller values in the presence of the dielectric h-BN substrate. The decrease in the band gap is the result of a polarization-induced screening effect, which alters the correlation energy of the frontier CNT orbitals and stabilizes valence band maximum and conduction band minimum. The value of the band gap renormalization is on the order of 0.25 to 0.5 eV in each case. Accounting for polarization-induced band gap changes is crucial in comparing computed values with experiment, since nanotubes are almost always grown on substrates. PMID:24402238

  8. Nanoscale semiconducting silicon as a nutritional food additive

    NASA Astrophysics Data System (ADS)

    Canham, L. T.

    2007-05-01

    Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

  9. Semiconducting behaviour of RuGa/sub 2/

    SciTech Connect

    Evers, J.; Meyer, H.; Oehlinger, G.

    1984-09-01

    RuGa/sub 2/ with TiSi/sub 2/-type structure was prepared by inductively heating ruthenium and gallium in a water-cooled copper boat under an argon atmosphere. The electric conductivity of a polycrystalline sample of nearly rectangular shape (7 x 5 x 4 mm/sup 3/) was measured in the temperature range from 20 to 400/sup 0/C by the four-point technique. RuGa/sub 2/ is a semiconductor with an electric resistivity of 0.2 ohm.cm at room temperature and a band gap of about 0.42 eV. Semiconducting properties have been qualitatively demonstrated for RuA1/sub 2/ (TiSi/sub 2/-type structure) and for Os/sub 2/Si/sub 3/ (Ru/sub 2/Si/sub 3/-type structure, defect TiSi/sub 2/-structure).

  10. Nonlinear Optics and Applications

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin A. (Editor); Frazier, Donald O. (Editor)

    2007-01-01

    Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

  11. Zero Thermal Expansion and Semiconducting Properties in PbTiO3-Bi(Co, Ti)O3 Ferroelectric Solid Solutions.

    PubMed

    Pan, Zhao; Chen, Jun; Jiang, Xingxing; Lin, Zheshuai; Zhang, Linxing; Fan, Longlong; Rong, Yangchun; Hu, Lei; Liu, Hui; Ren, Yang; Kuang, Xiaojun; Xing, Xianran

    2017-03-06

    Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Until now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in a semiconducting ferroelectric of 0.6PbTiO3-0.4Bi(Co0.55Ti0.45)O3-δ. Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied by negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ion (Ti(3+)) to another (Ti(4+)). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relatively lower band gap (Eg) value of 1.5 eV, while the ferroelectric property can be well-maintained with large polarization. The first-principles calculations reveal that the drastically narrowed Eg is related to the Co-Ti substitution. The present multifunctional material containing ZTE, semiconducting, and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.

  12. Zero thermal expansion and semiconducting properties in PbTiO3 –Bi(Co, Ti)O3 ferroelectric solid solutions

    DOE PAGES

    Pan, Zhao; Chen, Jun; Jiang, Xingxing; ...

    2017-02-16

    Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Up to now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in semiconducting ferroelectric of 0.6PbTiO3-0.4Bi(Co0.55Ti0.45)O3-δ. Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied by negative temperature coefficient ofmore » resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ionic (Ti3+) to another (Ti4+). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relative lower band-gap (Eg) value of 1.5 eV, while ferroelectric property can be well maintained with large polarization. The first-principles calculations reveal that the drastically narrowed Eg is related to the Co-Ti substitution. Finally, the present multifunctional material containing ZTE, semiconducting and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.« less

  13. Laser damage threshold and nonlinear optical studies on guanidinium L - monohydrogen tartrate (GuHT) single crystal for NLO device applications

    NASA Astrophysics Data System (ADS)

    Vivek, P.; Murugakoothan, P.

    2015-06-01

    An organic NLO material guanidinium l - monohydrogen tartrate (GuHT) was grown by the slow evaporation technique using water as a solvent. The GuHT crystal belongs to orthorhombic system with noncentrosymmetric space group P212121. The morphology of the GuHT crystal was studied. The laser induced surface damage threshold behaviour of the GuHT crystal was analyzed in different planes. The second harmonic generation (SHG) effective nonlinearity was confirmed by Kurtz and Perry powder technique.

  14. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays.

    PubMed

    Engel, Michael; Small, Joshua P; Steiner, Mathias; Freitag, Marcus; Green, Alexander A; Hersam, Mark C; Avouris, Phaedon

    2008-12-23

    Thin film transistors (TFTs) are now poised to revolutionize the display, sensor, and flexible electronics markets. However, there is a limited choice of channel materials compatible with low-temperature processing. This has inhibited the fabrication of high electrical performance TFTs. Single-walled carbon nanotubes (CNTs) have very high mobilities and can be solution-processed, making thin film CNT-based TFTs a natural direction for exploration. The two main challenges facing CNT-TFTs are the difficulty of placing and aligning CNTs over large areas and low on/off current ratios due to admixture of metallic nanotubes. Here, we report the self-assembly and self-alignment of CNTs from solution into micron-wide strips that form regular arrays of dense and highly aligned CNT films covering the entire chip, which is ideally suitable for device fabrication. The films are formed from pre-separated, 99% purely semiconducting CNTs and, as a result, the CNT-TFTs exhibit simultaneously high drive currents and large on/off current ratios. Moreover, they deliver strong photocurrents and are also both photo- and electroluminescent.

  15. A study of doped semiconducting nanowires using linear-scaling density-functional theory

    NASA Astrophysics Data System (ADS)

    Corsetti, Fabiano; Mostofi, Arash A.

    2010-03-01

    In recent years, the possibility of using semiconducting nanowires as building blocks for future nanoscale devices has generated considerable interest in understanding and theoretically predicting the effect of point defects in such structures. To this end, we present a fully ab initio study of both the neutral vacancy and gold substitutional defect in bulk silicon and SiNWs. We follow a systematic methodology for converging the defect formation energy using the supercell approach within plane-wave DFT [1]. Our results highlight the importance of using large supercells to accurately describe the long-ranged disturbance effects caused by point defects in crystal lattices. We show that the linear-scaling DFT code ONETEP [2] can be used to study defects in large systems with thousands of atoms without loss of accuracy, thereby allowing calculations on realistically sized NWs. We also compute maximally localized Wannier functions for the defect systems; these provide insight into the nature of the electronic bonds that are formed between atoms in the vicinity of the defect. Finally, we discuss phonon calculations on defect centres using ONETEP to determine the thermodynamic properties of these systems. [1] M. J. Probert and M. C. Payne, Phys. Rev. B 67, 075204 (2003). [2] C.-K. Skylaris, P. D. Haynes, A. A. Mostofi, and M. C. Payne, J. Chem. Phys. 122, 084119 (2005).

  16. Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle assisted plasma etching

    PubMed Central

    James, Teena; Kalinin, Yevgeniy V.; Chan, Chih-Chieh; Randhawa, Jatinder S.; Gaevski, Mikhail

    2012-01-01

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP) assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and coneangles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations. PMID:22725714

  17. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    PubMed Central

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-01-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10−4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics. PMID:27298196

  18. Many-body effects in semiconducting single-wall silicon nanotubes

    PubMed Central

    Wei, Wei

    2014-01-01

    Summary The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green’s function method, i.e., GW approximation and Bethe–Salpeter equation. In these studied structures, i.e., (4,4), (6,6) and (10,0) SiNTs, self-energy effects are enhanced giving rise to large quasi-particle (QP) band gaps due to the confinement effect. The strong electron−electron (e−e) correlations broaden the band gaps of the studied SiNTs from 0.65, 0.28 and 0.05 eV at DFT level to 1.9, 1.22 and 0.79 eV at GW level. The Coulomb electron−hole (e−h) interactions significantly modify optical absorption properties obtained at noninteracting-particle level with the formation of bound excitons with considerable binding energies (of the order of 1 eV) assigned: the binding energies of the armchair (4,4), (6,6) and zigzag (10,0) SiNTs are 0.92, 1.1 and 0.6 eV, respectively. Results in this work are useful for understanding the physics and applications in silicon-based nanoscale device components. PMID:24455458

  19. Many-body effects in semiconducting single-wall silicon nanotubes.

    PubMed

    Wei, Wei; Jacob, Timo

    2014-01-06

    The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green's function method, i.e., GW approximation and Bethe-Salpeter equation. In these studied structures, i.e., (4,4), (6,6) and (10,0) SiNTs, self-energy effects are enhanced giving rise to large quasi-particle (QP) band gaps due to the confinement effect. The strong electron-electron (e-e) correlations broaden the band gaps of the studied SiNTs from 0.65, 0.28 and 0.05 eV at DFT level to 1.9, 1.22 and 0.79 eV at GW level. The Coulomb electron-hole (e-h) interactions significantly modify optical absorption properties obtained at noninteracting-particle level with the formation of bound excitons with considerable binding energies (of the order of 1 eV) assigned: the binding energies of the armchair (4,4), (6,6) and zigzag (10,0) SiNTs are 0.92, 1.1 and 0.6 eV, respectively. Results in this work are useful for understanding the physics and applications in silicon-based nanoscale device components.

  20. Critical Role of Processing on the Thermoelectric Performance of Doped Semiconducting Polymers

    NASA Astrophysics Data System (ADS)

    Patel, Shrayesh; Glaudell, Anne; Chabinyc, Michael

    The ability to convert excess waste heat into useable energy can significantly help meet the global energy demands. One may capture this waste heat through thermoelectrics devices. In a thermoelectric material, the charge carriers transport both electrical current and heat. Consequently, under a temperature difference (ΔT), a carrier concentration gradient results in a voltage (ΔV), which is related to the Seebeck coefficient, α = - Δ V/ ΔT. One of the challenges lies in finding materials that simultaneously have low thermal conductivity (κ) , high electrical conductivity (σ) , and high Seebeck coefficient (α) . Conjugated semiconducting polymers can potentially meet this demand due to their inherent low thermal conductivity and high electrical conductivity through sufficient doping. Here, we report on the critical role of thermal processing on the enhancement of thermoelectric properties of conjugated polymer thin films. These films were doping using three different mechanisms: acid (toluene sulfonic acid), charge transfer (F4TCNQ), and vapor (fluorinated-alkyl trichlorosilane). These thermoelectrics properties will be correlated to the structural and morphological properties of the doped thin-films through various synchrotron X-ray scattering techniques. Lastly, to further elucidate the charge transport mechanism driving the thermoelectric performance, we report on the temperature-dependent measurements of both the Seebeck coefficient and electrical conductivity.

  1. Semiconducting ferroelectric SbSI quantum dots in organically modified TiO2 matrix

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Xu, Yuhuan; Mackenzie, John D.

    2000-05-01

    Semiconducting ferro electric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin film and bulk solids are successfully fabricated by the sol- gel process. Ferro electric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow energy gap. If the crystal size is near its Bohr radius and the microcrystallites are dispersed in a suitable matrix, a dramatic improvement of the third order non linearity will be achieved due to the quantum confinement effect. It is clear that the SbSI quantum dot composites are good candidates for electro-optical devices. Glycidoxypropyltrimetroxysilane modified TiO2 is used as the matrix and SbSI is synthesized in situ by using SbI3 SC9NH2)2 and H2S gas. The size is controlled by the heat-treatment conditions and is characterized by the XRD and HRTEM measurements. The optical absorption spectrum gives evidence of the quantum confinement effect. The third order susceptibility of the SbSI quantum dot is measured by the degenerate four wave mixing method.

  2. Biotin-Functionalized Semiconducting Polymer in an Organic Field Effect Transistor and Application as a Biosensor

    PubMed Central

    Kim, Zin-Sig; Lim, Sang Chul; Kim, Seong Hyun; Yang, Yong Suk; Hwang, Do-Hoon

    2012-01-01

    This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor. The side chains of fluorene were partially biotinylated after the esterification of the biotin with corresponding alcohol-groups at the side chain in F8T2. Their properties as an organic semiconductor were tested using an organic thin film transistor (OTFT) and were found to show typical p-type semiconductor curves. The functionality of this biosensor in the sensing of biologically active molecules such as avidin in comparison with bovine serum albumin (BSA) was established through a selective decrease in the conductivity of the transistor, as measured with a device that was developed by the authors. Changes to the optical properties of this polymer were also measured through the change in the color of the UV-fluorescence before and after a reaction with avidin or BSA. PMID:23112654

  3. Large Area Fabrication of Semiconducting Phosphorene by Langmuir-Blodgett Assembly

    PubMed Central

    Kaur, Harneet; Yadav, Sandeep; Srivastava, Avanish. K.; Singh, Nidhi; Schneider, Jörg J.; Sinha, Om. P.; Agrawal, Ved V.; Srivastava, Ritu

    2016-01-01

    Phosphorene is a recently new member of the family of two dimensional (2D) inorganic materials. Besides its synthesis it is of utmost importance to deposit this material as thin film in a way that represents a general applicability for 2D materials. Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-methyl-2-pyrrolidone and deoxygenated water is employed as a subphase in Langmuir-Blodgett trough for assembling the nanosheets followed by their deposition on substrates and studied its field-effect transistor characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 104 at room temperature in field-effect transistor devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications. PMID:27671093

  4. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    NASA Astrophysics Data System (ADS)

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-06-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10‑4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.

  5. Field-induced detrapping in disordered organic semiconducting host-guest systems

    NASA Astrophysics Data System (ADS)

    Cottaar, J.; Coehoorn, R.; Bobbert, P. A.

    2010-11-01

    In a disordered organic semiconducting host-guest material, containing a relatively small concentration of guest molecules acting as traps, the charge transport may be viewed as resulting from carriers that are detrapped from the guest to the host. Commonly used theories include only detrapping due to thermal excitation, described by the Fermi-Dirac (FD) distribution function. In this paper, we develop a theory describing the effect of field-induced detrapping (FID), which provides an additional contribution at finite electric fields. It is found from three-dimensional simulations that the FID effect can be described by a field-dependent generalized FD distribution that depends only on the shape of the host density of states (DOS) and not on the guest DOS. For the specific case of a Gaussian host DOS, we give an accurate and easy-to-use analytical expression for this distribution. The application of our theory is demonstrated for sandwich-type devices under conditions typical of organic light-emitting diodes.

  6. Biotin-functionalized semiconducting polymer in an organic field effect transistor and application as a biosensor.

    PubMed

    Kim, Zin-Sig; Lim, Sang Chul; Kim, Seong Hyun; Yang, Yong Suk; Hwang, Do-Hoon

    2012-01-01

    This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor. The side chains of fluorene were partially biotinylated after the esterification of the biotin with corresponding alcohol-groups at the side chain in F8T2. Their properties as an organic semiconductor were tested using an organic thin film transistor (OTFT) and were found to show typical p-type semiconductor curves. The functionality of this biosensor in the sensing of biologically active molecules such as avidin in comparison with bovine serum albumin (BSA) was established through a selective decrease in the conductivity of the transistor, as measured with a device that was developed by the authors. Changes to the optical properties of this polymer were also measured through the change in the color of the UV-fluorescence before and after a reaction with avidin or BSA.

  7. Universal helimagnon and skyrmion excitations in metallic, semiconducting and insulating chiral magnets.

    PubMed

    Schwarze, T; Waizner, J; Garst, M; Bauer, A; Stasinopoulos, I; Berger, H; Pfleiderer, C; Grundler, D

    2015-05-01

    Nearly seven decades of research on microwave excitations of magnetic materials have led to a wide range of applications in electronics. The recent discovery of topological spin solitons in chiral magnets, so-called skyrmions, promises high-frequency devices that exploit the exceptional emergent electrodynamics of these compounds. Therefore, an accurate and unified quantitative account of their resonant response is key. Here, we report all-electrical spectroscopy of the collective spin excitations in the metallic, semiconducting and insulating chiral magnets MnSi, Fe1-xCoxSi and Cu2OSeO3, respectively, using broadband coplanar waveguides. By taking into account dipolar interactions, we achieve a precise quantitative modelling across the entire magnetic phase diagrams using two material-specific parameters that quantify the chiral and the critical field energy. The universal behaviour sets the stage for purpose-designed applications based on the resonant response of chiral magnets with tailored electric conductivity and an unprecedented freedom for an integration with electronics.

  8. Long term experience with semi-conductive glaze high voltage post insulators

    SciTech Connect

    Baker, A.C.; Maney, J.W.; Szilagyi, Z. )

    1990-01-01

    Insulators using semi-conductive glaze have long been known for their superior contamination performance. Early glazes for this type however were not stable and successful use of semi-conductive glazed porcelain insulators was delayed many years until tin-antimony oxide glazes were developed. Service experience of eighteen years is now available for line and station post insulators with this type of glaze. Based on this experience, the aging characteristics of tin-antimony oxide semi-conductive glazes are described and quantified. Several different applications of these insulators are also described.

  9. Remote detection of electronic devices

    DOEpatents

    Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

    2012-09-25

    An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

  10. Electroluminescence of Dy{sup 3+} and Sm{sup 3+} ions in polycrystalline semiconducting zinc oxide

    SciTech Connect

    Bachir, S.; Kossanyi, J.; Sandouly, C.; Valat, P.; Ronfard-Haret, J.C.

    1995-04-13

    The electroluminescence of Dy{sup 3+} and Sm{sup 3+} ions inserted in polycrystalline semiconducting zinc oxide was studied using a rare earth-doped sintered zinc oxide disc sandwiched between two metallic solders. This device, which corresponds to a metal-semiconductor-metal (MSM) structure, is similar to a varistor and is able to operate under either ac or dc mode. The excitation of the trivalent rare earth ions is a consequence of a hot electron impact process. The rare earth ions are located near the grain boundaries. Their luminescence acts as a probe and evidences hot electrons near the grain boundaries where, in accordance with the model of varistors, they are produced by thermionic emission. 30 refs., 7 figs., 1 tab.

  11. Double lens device for tunable harmonic generation of laser beams in KBBF/RBBF crystals or other non-linear optic materials

    DOEpatents

    Kaminski, Adam

    2017-08-22

    A method and apparatus to generate harmonically related laser wavelengths includes a pair of lenses at opposing faces of a non-linear optical material. The lenses are configured to promote incoming and outgoing beams to be normal to each outer lens surface over a range of acceptance angles of the incoming laser beam. This reduces reflection loss for higher efficiency operation. Additionally, the lenses allow a wider range of wavelengths for lasers for more universal application. Examples of the lenses include plano-cylindrical and plano-spherical form factors.

  12. Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

    NASA Astrophysics Data System (ADS)

    Katzenmeyer, Aaron Michael

    As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

  13. The quantum pinch effect in semiconducting quantum wires: A bird’s-eye view

    NASA Astrophysics Data System (ADS)

    Kushwaha, Manvir S.

    2016-01-01

    Those who measure success with culmination do not seem to be aware that life is a journey not a destination. This spirit is best reflected in the unceasing failures in efforts for solving the problem of controlled thermonuclear fusion for even the simplest pinches for over decades; and the nature keeps us challenging with examples. However, these efforts have permitted researchers the obtention of a dense plasma with a lifetime that, albeit short, is sufficient to study the physics of the pinch effect, to create methods of plasma diagnostics, and to develop a modern theory of plasma processes. Most importantly, they have impregnated the solid state plasmas, particularly the electron-hole plasmas in semiconductors, which do not suffer from the issues related with the confinement and which have demonstrated their potential not only for the fundamental physics but also for the device physics. Here, we report on a two-component, cylindrical, quasi-one-dimensional quantum plasma subjected to a radial confining harmonic potential and an applied magnetic field in the symmetric gauge. It is demonstrated that such a system, as can be realized in semiconducting quantum wires, offers an excellent medium for observing the quantum pinch effect at low temperatures. An exact analytical solution of the problem allows us to make significant observations: Surprisingly, in contrast to the classical pinch effect, the particle density as well as the current density display a determinable maximum before attaining a minimum at the surface of the quantum wire. The effect will persist as long as the equilibrium pair density is sustained. Therefore, the technological promise that emerges is the route to the precise electronic devices that will control the particle beams at the nanoscale.

  14. Characterization of asymmetric electron and hole transport in a high-mobility semiconducting polymer

    NASA Astrophysics Data System (ADS)

    Wang, Liguo; Wang, Xinliang; Liu, Mengli; Cheng, Lingfei

    2017-01-01

    The electron and hole transport properties in a high-mobility n-type copolymer poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]-alt-5,5'-(2,2'-dithiophene)}[P(NDI2OD-T2), PolyeraActivInk™ N2200] are investigated. The electron mobility is observed to be more than two orders of magnitude higher than the hole mobility. The thickness-dependent current density versus voltage ( J- V) characteristics of N2200 electron-only and hole-only devices cannot be well described using the conventional mobility model. However, the thickness-dependent and temperature-dependent J- V characteristics of N2200 electron-only and hole-only devices can be accurately described using our recently introduced improved mobility model only with a single set of parameters. Within the improved model, the mobility depends on three important physical quantities: the temperature, carrier density, and electric field. For the semiconducting polymer studied, we find the width of the Gaussian density of states σ = 0.082 eV and the lattice constant a = 0.8 nm for electron transport, while the width of the Gaussian density of states σ = 0.11 eV and the lattice constant a = 0.8 nm for hole transport. It is clear that hole transport exhibits a significantly stronger disorder than electron transport. This is also reflected in the lower hole mobility, as compared to the electron mobility.

  15. Switching phase separation mode by varying the hydrophobicity of polymer additives in solution-processed semiconducting small-molecule/polymer blends

    NASA Astrophysics Data System (ADS)

    He, Zhengran; Li, Dawen; Hensley, Dale K.; Rondinone, Adam J.; Chen, Jihua

    2013-09-01

    Lateral and vertical phase separations play critical roles in the performance of the next-generation organic and hybrid electronic devices. A method is demonstrated here to switch between lateral and vertical phase separations in semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPSE pentacene)/polymer blend films by simply varying the alkyl length of the polyacrylate polymer component. The phase separation modes depend on intermolecular interactions between small molecule TIPSE pentancene and polymer additives. The blend film with a dominant vertical phase separation exhibits a significant enhancement in average mobility and performance consistency of organic thin-film transistors.

  16. Below-gap excitation of semiconducting single-wall carbon nanotubes.

    PubMed

    Soavi, G; Grupp, A; Budweg, A; Scotognella, F; Hefner, T; Hertel, T; Lanzani, G; Leitenstorfer, A; Cerullo, G; Brida, D

    2015-11-21

    We investigate the optoelectronic properties of the semiconducting (6,5) species of single-walled carbon nanotubes by measuring ultrafast transient transmission changes with 20 fs time resolution. We demonstrate that photons with energy below the lowest exciton resonance efficiently lead to linear excitation of electronic states. This finding challenges the established picture of a vanishing optical absorption below the fundamental excitonic resonance. Our result points towards below-gap electronic states as an intrinsic property of semiconducting nanotubes.

  17. Nonlinear optics

    SciTech Connect

    Boyd, R.W. . Inst. of Optics)

    1992-01-01

    Nonlinear optics is the study of the interaction of intense laser light with matter. This book is a textbook on nonlinear optics at the level of a beginning graduate student. The intent of the book is to provide an introduction to the field of nonlinear optics that stresses fundamental concepts and that enables the student to go on to perform independent research in this field. This book covers the areas of nonlinear optics, quantum optics, quantum electronics, laser physics, electrooptics, and modern optics.

  18. Nonlinear Waves

    DTIC Science & Technology

    1989-06-15

    following surprising situation. Namely associated with the integrable nonlinear Schrodinger equations are standard numerical schemes which exhibit at...36. An Initial Boundary Value Problem for the Nonlinear Schrodinger Equations , A.S. Fokas, Physica D March 1989. 37. Evolution Theory, Periodic... gravity waves and wave excitation phenomena related to moving pressure distributions; numerical approximation and computation; nonlinear optics; and

  19. Nonlinear Peltier effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali

    2007-09-01

    Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically for single parabolic band semiconductors assuming a shifted Fermi-Dirac electronic distribution under an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters affecting the nonlinear behavior are doping concentration, effective mass, and electron-phonon coupling. Current density thresholds at which nonlinear behavior is observable are extracted from numerical data. It is shown that the nonlinear Peltier effect can be used to enhance cooling of thin film microrefrigerator devices especially at low temperatures.

  20. PREFACE: 17th International Conference on Microscopy of Semiconducting Materials 2011

    NASA Astrophysics Data System (ADS)

    Walther, T.; Midgley, P. A.

    2011-11-01

    This volume contains invited and contributed papers from the 17th international conference on 'Microscopy of Semiconducting Materials' held at Churchill College, University of Cambridge, on 4-7 April 2011. The meeting was organised under the auspices of the Institute of Physics and supported by the Royal Microscopical Society as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution. This time the meeting was attended by 131 delegates from 25 countries world-wide, a record in terms of internationality. As semiconductor devices shrink further new routes of device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, the electronic structure, the chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two examples of topics at this meeting that have attracted a number of interesting studies were: the correlation of microstructural, optical and chemical information at atomic resolution with nanometre-scale resolved maps of the local electrical fields in (In,Al)GaN based semiconductors and tomographic approaches to characterise ensembles of nanowires and stacks of processed layers in devices Figure 1 Figure 1. Opening lecture by Professor Sir Colin J Humphreys. Each manuscript submitted for publication in this proceedings volume has been independently reviewed and revised

  1. The influence of contact transparency on the superconducting proximity effect in thin semiconducting films

    NASA Astrophysics Data System (ADS)

    Vissers, Michael Robert

    The superconducting proximity effect allows for the introduction of pair correlations into otherwise normal metals provided that they are coupled through a sufficiently transparent junction. The influence of this proximity effect manifests itself by modifying both the normal layer sheet resistance in the proximity affected region, Rs, and the junction conductance across the N-S boundary, Gc. These two quantities are impossible to measure simultaneously with any single two terminal device even if it is a four point measurement. However, a new three terminal device structure allows us to make two independent four point voltage measurements, which permits the extraction of these two intrinsic aspects of the proximity effect when combined with simple Ohm's law modeling. Devices with completely in-situ junctions between niobium and heavily doped n-GaAs and n-InAs were fabricated via molecular beam epitaxy. In order to reduce the Schottky barrier, a graded and delta-doped InGaAs cap was inserted at the interface. Careful construction of the doping profile in the cap allows for extremely transparent junctions just prior to the onset of superconductivity, the most transparent Nb-GaAs junctions yet reported. The transparency of the junction can be evaluated by calculating the number of available quantum channels between the two different Fermi surfaces and using the Landauer formalism to determine the ideal junction conductance. Comparison to the experimental junction conductance permits the discovery of the fundamental transmission coefficient for transport across the N-S interface. If the semiconducting depth is small enough the presence of correlations in the semiconductor are observed. Samples with deeper depths exhibit no direct evidence of superconductivity inside the semiconductor. Samples consisting of doped InAs were also fabricated and measured. These samples exhibit almost perfect contact between the superconductor and the semiconductor and pair correlations are

  2. Information-based screens for deep traps in semiconducting materials

    NASA Astrophysics Data System (ADS)

    Ferris, Kim; Shah, Kunal; Jones, Dumont

    2011-03-01

    The key to a successful materials search is the ability to suggest promising materials and a priori eliminate unfruitful inquiry. For semiconducting radiation detection materials, performance is characterized by several key properties; band gap, density, electron mobility, and carrier lifetime. The material's proclivity to form defects is critical, as even simple antisite and vacancy defects can be sufficiently deep to affect effective carrier lifetime and mobility. We have developed a new model for defect formation proclivity, leveraging prior defect models (van Vechten and Feichter) and our information-based work. Our approach is based upon classification of materials chemistry and properties consistent with high concentrations of particular defects (e.g. antisites and vacancies). One issue is that nearly any charged local defect can potentially form a deep trap, so the screen must cover different defect types. Second, the screening model for new materials cannot rely on generally unknown factors such as 3D crystal geometry. The resulting model is intended to provide design guidance on expected defect behavior for candidate detection materials for which there is little or no prior information. The authors gratefully acknowledge financial support from U.S. Department of Homeland Security under Contract No. HSHQDC-08-X-00872.

  3. Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers

    SciTech Connect

    Sivadas, Nikhil; Daniels, Matthew W.; Swendsen, Robert H.; Okamoto, Satoshi; Xiao, Di

    2015-06-16

    Layered transition-metal trichalcogenides with the chemical formula ABX3 have attracted recent interest as potential candidates for two-dimensional magnets. Using first-principles calculations within density functional theory, we investigate the magnetic ground states of monolayers of Mn- and Cr-based semiconducting trichalcogenides.We show that the second and third nearest-neighbor exchange interactions (J2 and J3) between magnetic ions, which have been largely overlooked in previous theoretical studies, are crucial in determining the magnetic ground state. Specifically, we find that monolayer CrSiTe3 is an antiferromagnet with a zigzag spin texture due to significant contribution from J3, whereas CrGeTe3 is a ferromagnet with a Curie temperature of 106 K. Monolayers of Mn compounds (MnPS3 and MnPSe3) always show antiferromagnetic N eel order. We identify the physical origin of various exchange interactions, and demonstrate that strain can be an effective knob for tuning the magnetic properties. Possible magnetic ordering in the bulk is also discussed. In conclusion, our study suggests that ABX3 can be a promising platform to explore two-dimensional magnetic phenomena.

  4. Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

    PubMed Central

    Feng, Ping; Shao, Feng; Shi, Yi; Wan, Qing

    2014-01-01

    One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed. PMID:25232915

  5. Semiconducting polyacetylene materials for energy-conversion applications

    NASA Astrophysics Data System (ADS)

    Kiss, Z.; Weinberger, B.

    1982-03-01

    Well controlled growth of semiconducting polyacetylene films by the Ziegler catalyst method was achieved. Thermal isomerization to the trans-(CH)/sub x/stage has yielded (CH)/sub x/films of p-type doping with an acceptor concentration of 10 to the sixteenth to 10 to the 17th power cu cm. Initial proof of concept experiments were also performed to grow polyacetylene by a plasma assisted process. The band edge of (CH)/sub x/ was measured. The technique consisted of measuring the photoresponse of a reverse biased (CH)/sub x/ solar cell, and studying the cut off in the response. The (CH)/sub x/ films had a band gap in the range of 1.4 to 1.5 eV, in good agreement with the measurement of absorption. A very important result of the successful demonstration of this technique is that very low absorption coefficients can be measured quite easily, yielding invaluable data on band tails in (CH)/sub x/.

  6. Effect of Broken Conjugation on the Stretchability of Semiconducting Polymers.

    PubMed

    Savagatrup, Suchol; Zhao, Xikang; Chan, Esther; Mei, Jianguo; Lipomi, Darren J

    2016-10-01

    Increasing the flexibility of polymer chains is a common method of increasing the deformability of solid polymeric materials. Here, the effects of "conjugation-break spacers" (CBSs)-aliphatic units that interrupt the sp(2) -hybridized backbone of semiconducting polymers-on the mechanical and photovoltaic properties of a diketopyrrolopyrrole-based polymer are described. Unexpectedly, the tensile moduli and cracking behavior of a series of polymers with repeat units bearing 0%, 30%, 50%, 70%, and 100% of the CBS are not directly related to the percent incorporation of the flexible unit. Rather, the mechanical properties are a strong function of the order present in the film as determined by grazing-incidence x-ray diffraction. The effect of the CBSs on the photovoltaic performance of these materials, on the other hand, is more intuitive: it decreases with increasing fraction of the flexible units. These studies highlight the importance of solid-state packing structure-as opposed to only the flexibility of the individual molecules-in determining the mechanical properties of a conjugated polymer film for stretchable, ultraflexible, and mechanically robust electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Surface engineering of semiconducting polymer nanoparticles for amplified photoacoustic imaging.

    PubMed

    Zhen, Xu; Feng, Xiaohua; Xie, Chen; Zheng, Yuanjin; Pu, Kanyi

    2017-05-01

    Despite the deeper tissue penetration of photoacoustic (PA) imaging, its sensitivity is generally lower than optical imaging. This fact partially restricts the applications of PA imaging and greatly stimulates the development of sensitive PA imaging agents. We herein report that the surface coating of semiconducting polymer nanoparticles (SPNs) with the silica layer can simultaneously amplify fluorescence and PA brightness while maintaining their photothermal conversion efficiency nearly unchanged. As compared with the bare SPNs, the silica-coated SPNs (SPNs-SiO2) have higher photothermal heating rate in the initial stage of laser irradiation due to the higher interfacial thermal conductance between the silica layer and water relative to that between the SP and water. Such an interfacial effect consequently results in sharp temperature increase and in turn amplified PA brightness for SPNs-SiO2. By conjugating poly(ethylene glycol) (PEG) and cyclic-RGD onto SPNs-SiO2, targeted PA imaging of tumor in living mice is demonstrated after systemic administration, showing a high signal to background ratio. Our study provides a surface engineering approach to amplify the PA signals of organic nanoparticles for molecular imaging. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

    SciTech Connect

    Hughes, Steven Michael

    2007-01-01

    The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

  9. Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers

    DOE PAGES

    Sivadas, Nikhil; Daniels, Matthew W.; Swendsen, Robert H.; ...

    2015-06-16

    Layered transition-metal trichalcogenides with the chemical formula ABX3 have attracted recent interest as potential candidates for two-dimensional magnets. Using first-principles calculations within density functional theory, we investigate the magnetic ground states of monolayers of Mn- and Cr-based semiconducting trichalcogenides.We show that the second and third nearest-neighbor exchange interactions (J2 and J3) between magnetic ions, which have been largely overlooked in previous theoretical studies, are crucial in determining the magnetic ground state. Specifically, we find that monolayer CrSiTe3 is an antiferromagnet with a zigzag spin texture due to significant contribution from J3, whereas CrGeTe3 is a ferromagnet with a Curie temperaturemore » of 106 K. Monolayers of Mn compounds (MnPS3 and MnPSe3) always show antiferromagnetic N eel order. We identify the physical origin of various exchange interactions, and demonstrate that strain can be an effective knob for tuning the magnetic properties. Possible magnetic ordering in the bulk is also discussed. In conclusion, our study suggests that ABX3 can be a promising platform to explore two-dimensional magnetic phenomena.« less

  10. Damage Diagnosis in Semiconductive Materials Using Electrical Impedance Measurements

    NASA Technical Reports Server (NTRS)

    Ross, Richard W.; Hinton, Yolanda L.

    2008-01-01

    Recent aerospace industry trends have resulted in an increased demand for real-time, effective techniques for in-flight structural health monitoring. A promising technique for damage diagnosis uses electrical impedance measurements of semiconductive materials. By applying a small electrical current into a material specimen and measuring the corresponding voltages at various locations on the specimen, changes in the electrical characteristics due to the presence of damage can be assessed. An artificial neural network uses these changes in electrical properties to provide an inverse solution that estimates the location and magnitude of the damage. The advantage of the electrical impedance method over other damage diagnosis techniques is that it uses the material as the sensor. Simple voltage measurements can be used instead of discrete sensors, resulting in a reduction in weight and system complexity. This research effort extends previous work by employing finite element method models to improve accuracy of complex models with anisotropic conductivities and by enhancing the computational efficiency of the inverse techniques. The paper demonstrates a proof of concept of a damage diagnosis approach using electrical impedance methods and a neural network as an effective tool for in-flight diagnosis of structural damage to aircraft components.

  11. Magnetic endohedral transition-metal-doped semiconducting-nanoclusters.

    PubMed

    Matxain, Jon M; Formoso, Elena; Mercero, Jose M; Piris, Mario; Lopez, Xabier; Ugalde, Jesus M

    2008-01-01

    Endohedral first-row transition-metal-doped TM@Zn(i)S(i) nanoclusters, in which TM stands for the first-row transition-metals from Sc to Zn, and i=12, 16, have been characterized. In these structures the dopant metals are trapped inside spheroidal hollow semiconducting nanoclusters. It is observed that some of the transition metals are trapped in the center of mass of the cluster, whereas others are found to be displaced from that center, leading to structures in which the transition metals display a complex dynamical behavior upon encapsulation. This fact was confirmed by quantum molecular dynamics calculations, which further confirmed the thermal stability of endohedral compounds. In the endohedrally-doped nanoclusters in which the transition-metal atom sits on the center of mass, the host hollow cluster structure remains undistorted after dopant encapsulation. Conversely, if the encapsulated transition-metal atom is displaced from the center of mass, the host hollow cluster structure suffers a very tiny distortion. Additionally, it is found that there is negligible charge transfer between the dopant transition-metal atom and its hollow cluster host and, after encapsulation, the spin densities remain localized on the transition-metal atom. This allows for the atomic-like behavior of the trapped transition-metal atom, which gives rise to their atomic-like magnetic properties. The encapsulation free energies are negative, suggesting that these compounds are thermodynamically stable.

  12. Polarons in semiconducting polymers: Study within an extended Holstein model

    NASA Astrophysics Data System (ADS)

    Meisel, K. D.; Vocks, H.; Bobbert, P. A.

    2005-05-01

    We present a study of electron- (hole-) phonon interaction and polaron formation in semiconducting polymers within an extended Holstein model. A minimization of the lowest electronic state of this Hamiltonian with respect to lattice degrees of freedom yields the polaronic ground state. Input parameters of this Hamiltonian are obtained from ab initio calculations based on the density-functional theory. We calculate optical phonon modes and the coupling constants of these modes to the highest occupied and lowest unoccupied molecular orbital bands, respectively. For the studied polymers [polythiophene, poly(phenylenevinylene), poly(para-phenylene)] the polaron binding energy, its size, and the lattice deformation as a function of conjugation length have been determined. Self-trapped polarons are found for long conjugation lengths. Energies of prominent PPV modes involved in polaron formation agree with infrared spectra. The polaron binding energies we find are much smaller than the width of the energy disorder in polymeric systems of practical importance, thus self-trapping effects can be ignored in practice.

  13. A statistical model of a metallic inclusion in semiconducting media

    SciTech Connect

    Shikin, V. B.

    2016-11-15

    The properties of an isolated multicharged atom embedded into a semiconducting medium are discussed. The analysis generalizes the results of the known Thomas–Fermi theory for a multicharged (Z ≫ 1) atom in vacuum when it is immersed into an electron–hole gas of finite temperature. The Thomas–Fermi–Debye (TFD) atom problem is directly related to the properties of donors in low-doped semiconductors and is alternative in its conclusions to the ideal scenario of dissociation of donors. In the existing ideal statistics, an individual donor under infinitely low doping is completely ionized (a charged center does not hold its neutralizing counter-ions). A Thomas–Fermi–Debye atom (briefly, a TFD donor) remains a neutral formation that holds its screening “coat” even for infinitely low doping level, i.e., in the region of n{sub d}λ{sub 0}{sup 3} ≪ 1, where n{sub d} is the concentration of the doping impurity and λ{sub 0} is the Debye length with the parameters of intrinsic semiconductor. Various observed consequences in the behavior of a TFD donor are discussed that allow one to judge the reality of the implications of the TFD donor model.

  14. Solidification and crystal growth of solid solution semiconducting alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1984-01-01

    Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

  15. A statistical model of a metallic inclusion in semiconducting media

    NASA Astrophysics Data System (ADS)

    Shikin, V. B.

    2016-11-01

    The properties of an isolated multicharged atom embedded into a semiconducting medium are discussed. The analysis generalizes the results of the known Thomas-Fermi theory for a multicharged ( Z ≫ 1) atom in vacuum when it is immersed into an electron-hole gas of finite temperature. The Thomas-Fermi-Debye (TFD) atom problem is directly related to the properties of donors in low-doped semiconductors and is alternative in its conclusions to the ideal scenario of dissociation of donors. In the existing ideal statistics, an individual donor under infinitely low doping is completely ionized (a charged center does not hold its neutralizing counter-ions). A Thomas-Fermi-Debye atom (briefly, a TFD donor) remains a neutral formation that holds its screening "coat" even for infinitely low doping level, i.e., in the region of n d λ0 3 ≪ 1, where n d is the concentration of the doping impurity and λ0 is the Debye length with the parameters of intrinsic semiconductor. Various observed consequences in the behavior of a TFD donor are discussed that allow one to judge the reality of the implications of the TFD donor model.

  16. Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers

    NASA Astrophysics Data System (ADS)

    Sivadas, Nikhil; Daniels, Matthew W.; Swendsen, Robert H.; Okamoto, Satoshi; Xiao, Di

    2015-06-01

    Layered transition-metal trichalcogenides with the chemical formula A B X3 have attracted recent interest as potential candidates for two-dimensional magnets. Using first-principles calculations within density functional theory, we investigate the magnetic ground states of monolayers of Mn- and Cr-based semiconducting trichalcogenides. We show that the second and third nearest-neighbor exchange interactions (J2 and J3) between magnetic ions, which have been largely overlooked in previous theoretical studies, are crucial in determining the magnetic ground state. Specifically, we find that monolayer CrSiTe3 is an antiferromagnet with a zigzag spin texture due to significant contribution from J3, whereas CrGeTe3 is a ferromagnet with a Curie temperature of 106 K. Monolayers of Mn compounds (MnPS3 and MnPSe3) always show antiferromagnetic Néel order. We identify the physical origin of various exchange interactions, and demonstrate that strain can be an effective knob for tuning the magnetic properties. Possible magnetic ordering in the bulk is also discussed. Our study suggests that A B X3 can be a promising platform to explore two-dimensional magnetic phenomena.

  17. Gas sensors based on semiconducting nanowire field-effect transistors.

    PubMed

    Feng, Ping; Shao, Feng; Shi, Yi; Wan, Qing

    2014-09-17

    One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

  18. Solidification and crystal growth of solid solution semiconducting alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1984-01-01

    Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

  19. Synthesis and spectroscopic properties of a soluble semiconducting porphyrin polymer.

    PubMed

    Schmitz, Robert A; Liddell, Paul A; Kodis, Gerdenis; Kenney, Michael J; Brennan, Bradley J; Oster, Nolan V; Moore, Thomas A; Moore, Ana L; Gust, Devens

    2014-09-07

    A semiconducting porphyrin polymer that is solution processable and soluble in organic solvents has been synthesized, and its spectroscopic and electrochemical properties have been investigated. The polymer consists of diarylporphyrin units that are linked at meso-positions by aminophenyl groups, thus making the porphyrin rings an integral part of the polymer backbone. Hexyl chains on two of the aryl groups impart solubility. The porphyrin units interact only weakly in the ground electronic state. Excitation produces a local excited state that rapidly evolves into a state with charge-transfer character (CT) involving the amino nitrogen and the porphyrin macrocycle. Singlet excitation energy is transferred between porphyrin units in the chain with a time constant of ca. 210 ps. The final CT state has a lifetime of several nanoseconds, and the first oxidation of the polymer occurs at ca. 0.58 V vs. SCE. These properties make the polymer a suitable potential excited state electron donor to a variety of fullerenes or other acceptor species, suggesting that the polymer may find use in organic photovoltaics, sensors, and similar applications.

  20. Nonlinear silicon photonics

    NASA Astrophysics Data System (ADS)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  1. Transport and dielectric studies of metallic, semiconducting, and magnetic materials and devices

    NASA Astrophysics Data System (ADS)

    Vasic, Relja

    Several organic and inorganic systems of importance for fundamental physics and applications have been studied by magnetotransport, dielectric constant, and Raman spectroscopy techniques. At the beginning of my thesis work, I investigated three carbon based organic systems: carbon fibers, pentacene derivatives, and a nanomagnetic material ("V15"). In the latter stages of my dissertation, I used the techniques I had developed to explore the properties of two inorganic systems: NiFe nanopillars in a silicon matrix, and spin systems in multiferroic rare earth-transition metal oxides. The main activities and achievements of my thesis work are as follows: The carbon fibers were characterized by magnetotransport and Raman spectroscopy studies. I found that carbon fibers are promising as wires in molecular electronics and compatible with organic films. Preliminary results on simple films of melted pentacene derivatives connected with carbon fiber wires were a first step in the fabrication and characterization of pentacene field effect transistors (FET's). The work on the pentacene system resulted in a series of successful logic circuits based on field-effect transistors such as NOT (inverter), NOR, and NAND. The temperature-dependent mobility was described as thermally activated at low gate voltages, but at high gate voltages the mobility was enhanced due to shallow traps. The second system investigated was the organic nanomagnetic material, polyoxovanadate, K6[V15As6O42(H 2O)]˙8H2O (i.e. V15). The conductivity and the dielectric measurements at high and low temperatures respectively were used to determine electrical properties of this single magnet molecule system. The main accomplishments were the determination of the energy gap (0.2eV) and the identification of multiple dipole relaxation modes. Raman vibrational spectroscopy was used to correlate dielectric relaxation with the Raman intramolecular vibrations. An investigation was then carried out on NiFe nanopillars electrodeposited in nanoporous silicon templates (Si:P), studied with transport and dielectric methods in high magnetic fields. This system exhibited a frequency and temperature dependent dielectric response which followed a Debye relaxation mechanism. It was discovered that in high magnetic fields greater than 10 T, multiple relaxation structures emerged that were magnetic field direction dependent. It was realized that such a phenomena occurs in Si:P, and is not directly related to the NiFe nanostructure. Hence, a new magnetic field induced phenomenon in the dielectric response in Si was observed, which involves the effects of a magnetic field on an electric dipole. Here, the field induces a harmonic oscillator state from the zero field Debye-like relaxation behavior. The final work in the thesis project focused on the inorganic rare-earth transition metal oxide system HoMnO3 and related compounds. Dielectric measurements were used to characterize and map out the magnetic phase transitions in the doped ferroelectric series Ho1-xY xMnO3. The phase transitions involved complex rotations of the Mn spins. I found that the behavior of these spin rotations were highly dependent on magnetic field, magnetic field direction, and the degree of doping with the non-magnetic Y ion. Hence the magnetic field anisotropy study is an important step towards the understanding of magnetic and electric phase competition in the diluted 4 f system by the non-magnetic ion Yttrium (Y). From highly systematic measurements involving these parameters, I mapped out detailed phase diagrams for the Ho1-x YxMnO3 system which will be very useful for future theoretical work to describe the complex spin interactions involved.

  2. Novel BTlGaN semiconducting materials for infrared opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Assali, Abdenacer; Bouslama, M'hamed

    2017-03-01

    BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

  3. Semiconducting Polythiophenes for Field-Effect Transistor Devices in Flexible Electronics: Synthesis and Structure Property Relationships

    NASA Astrophysics Data System (ADS)

    Heeney, Martin; McCulloch, Iain

    Interest in the field of organic electronics has burgeoned over the last 10 years, as the continuing improvement in performance has transitioned the technology from an academic curiosity to the focus of intense industrial and academic research. Much of this interest is driven by the belief that organic materials will be readily amenable to low-cost, large-area deposition techniques, enabling both significant cost savings and the ability to pattern flexible substrates with active electronics. Potential applications include thin-film transistor (TFT) backplanes for a variety of display modes including active matrix liquid crystal displays (AMLCDs), flexible displays such as e-paper, disposable item level radio frequency identity (RFID) tags, flexible solar cells, and cheap and disposable sensors.

  4. Nonlinear supratransmission

    NASA Astrophysics Data System (ADS)

    Geniet, F.; Leon, J.

    2003-05-01

    A nonlinear system possessing a natural forbidden band gap can transmit energy of a signal with a frequency in the gap, as recently shown for a nonlinear chain of coupled pendulums (Geniet and Leon 2002 Phys. Rev. Lett. 89 134102). This process of nonlinear supratransmission, occurring at a threshold that is exactly predictable in many cases, is shown to have a simple experimental realization with a mechanical chain of pendulums coupled by a coil spring. It is then analysed in more detail. First we go to different (nonintegrable) systems which do sustain nonlinear supratransmission. Then a Josephson transmission line (a one-dimensional array of short Josephson junctions coupled through superconducting wires) is shown to also sustain nonlinear supratransmission, though being related to a different class of boundary conditions, and despite the presence of damping, finiteness, and discreteness. Finally, the mechanism at the origin of nonlinear supratransmission is found to be a nonlinear instability, and this is briefly discussed here.

  5. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  6. Analysis of Molecular Orientation in Organic Semiconducting Thin Films Using Static Dynamic Nuclear Polarization Enhanced Solid-State NMR.

    PubMed

    Suzuki, Katsuaki; Kubo, Shosei; Aussenac, Fabien; Engelke, Frank; Fukushima, Tatsuya; Kaji, Hironori

    2017-10-09

    Molecular orientation in amorphous organic semiconducting thin film devices is an important issue affecting device performances. However, to date it has not been possible to analyze the "distribution" of the orientations. Although solid-state NMR (ssNMR) can provide information on the distribution of molecular orientations, the technique is limited because of the small amounts of sample in the devices and the low sensitivity of ssNMR. Here, we report the first application of dynamic nuclear polarization enhanced ssNMR (DNP-ssNMR) to orientational analysis of amorphous phenyldi(pyren-1-yl)phosphine oxide (POPy2). The 31P DNP-ssNMR spectra exhibited a sufficient signal-to-noise ratio to quantify the distribution of molecular orientations in amorphous films: the P=O axis of the vacuum-deposited and drop-cast POPy2 shows anisotropic and isotropic distribution, respectively. The different molecular orientations reflect the molecular origin of the different charge transport behaviors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Gradient Nonlinear Pancharatnam-Berry Metasurfaces

    NASA Astrophysics Data System (ADS)

    Tymchenko, Mykhailo; Gomez-Diaz, J. Sebastian; Lee, Jongwon; Nookala, Nishant; Belkin, Mikhail A.; Alù, Andrea

    2015-11-01

    We apply the Pancharatnam-Berry phase approach to plasmonic metasurfaces loaded by highly nonlinear multiquantum-well substrates, establishing a platform to control the nonlinear wave front at will based on giant localized nonlinear effects. We apply this approach to design flat nonlinear metasurfaces for efficient second-harmonic radiation, including beam steering, focusing, and polarization manipulation. Our findings open a new direction for nonlinear optics, in which phase matching issues are relaxed, and an unprecedented level of local wave front control is achieved over thin devices with giant nonlinear responses.

  8. Gradient Nonlinear Pancharatnam-Berry Metasurfaces.

    PubMed

    Tymchenko, Mykhailo; Gomez-Diaz, J Sebastian; Lee, Jongwon; Nookala, Nishant; Belkin, Mikhail A; Alù, Andrea

    2015-11-13

    We apply the Pancharatnam-Berry phase approach to plasmonic metasurfaces loaded by highly nonlinear multiquantum-well substrates, establishing a platform to control the nonlinear wave front at will based on giant localized nonlinear effects. We apply this approach to design flat nonlinear metasurfaces for efficient second-harmonic radiation, including beam steering, focusing, and polarization manipulation. Our findings open a new direction for nonlinear optics, in which phase matching issues are relaxed, and an unprecedented level of local wave front control is achieved over thin devices with giant nonlinear responses.

  9. ROLE OF THE NETWORK FORMER IN SEMICONDUCTING OXIDE GLASSES.

    DTIC Science & Technology

    SEMICONDUCTOR DEVICES, *GLASS), (*ELECTRICAL NETWORKS, GLASS), ELECTRICAL PROPERTIES, SEEBECK EFFECT , BORATES, PHOSPHATES, ELECTRICAL RESISTANCE, X RAY DIFFRACTION, ANNEALING, OXIDATION, OXIDES, ELECTRODES, VANADIUM

  10. Crystal growth, perfection, linear and nonlinear optical, photoconductivity, dielectric, thermal and laser damage threshold properties of 4-methylimidazolium picrate: an interesting organic crystal for photonic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Rajesh, K.; Arun, A.; Mani, A.; Praveen Kumar, P.

    2016-10-01

    The 4-methylimidazolium picrate has been synthesized and characterized successfully. Single and powder x-ray diffraction studies were conducted which confirmed the crystal structure, and the value of the strain was calculated. The crystal perfection was determined by a HRXR diffractometer. The transmission spectrum exhibited a better transmittance of the crystal in the entire visible region with a lower cut-off wavelength of 209 nm. The linear absorption value was calculated by the optical limiting method. A birefringence study was also carried out. Second and third order nonlinear optical properties of the crystal were found by second harmonic generation and the z-scan technique. The crystals were also characterized by dielectric measurement and a photoconductivity analyzer to determine the dielectric property and the optical conductivity of the crystal. The laser damage threshold activity of the grown crystal was studied by a Q-switched Nd:YAG laser beam. Thermal studies established that the compound did not undergo a phase transition and was stable up to 240 °C.

  11. Hybrid free electron laser devices

    SciTech Connect

    Asgekar, Vivek; Dattoli, G.

    2007-03-15

    We consider hybrid free electron laser devices consisting of Cerenkov and undulator sections. We will show that they can in principle be used as segmented devices and also show the possibility of exploiting Cerenkov devices for the generation of nonlinear harmonic coherent power. We discuss both oscillator and amplifier schemes.

  12. Charged-particle spectroscopy in organic semiconducting single crystals

    SciTech Connect

    Ciavatti, A.; Basiricò, L.; Fraboni, B.; Fraleoni-Morgera, A.

    2016-04-11

    The use of organic materials as radiation detectors has grown, due to the easy processability in liquid phase at room temperature and the possibility to cover large areas by means of low cost deposition techniques. Direct charged-particle detectors based on solution-grown Organic Semiconducting Single Crystals (OSSCs) are shown to be capable to detect charged particles in pulse mode, with very good peak discrimination. The direct charged-particle detection in OSSCs has been assessed both in the planar and in the vertical axes, and a digital pulse processing algorithm has been used to perform pulse height spectroscopy and to study the charge collection efficiency as a function of the applied bias voltage. Taking advantage of the charge spectroscopy and the good peak discrimination of pulse height spectra, an Hecht-like behavior of OSSCs radiation detectors is demonstrated. It has been possible to estimate the mobility-lifetime value in organic materials, a fundamental parameter for the characterization of radiation detectors, whose results are equal to μτ{sub coplanar} = (5 .5 ± 0.6 ) × 10{sup −6} cm{sup 2}/V and μτ{sub sandwich} = (1 .9 ± 0.2 ) × 10{sup −6} cm{sup 2}/V, values comparable to those of polycrystalline inorganic detectors. Moreover, alpha particles Time-of-Flight experiments have been carried out to estimate the drift mobility value. The results reported here indicate how charged-particle detectors based on OSSCs possess a great potential as low-cost, large area, solid-state direct detectors operating at room temperature. More interestingly, the good detection efficiency and peak discrimination observed for charged-particle detection in organic materials (hydrogen-rich molecules) are encouraging for their further exploitation in the detection of thermal and high-energy neutrons.

  13. Charged-particle spectroscopy in organic semiconducting single crystals

    NASA Astrophysics Data System (ADS)

    Ciavatti, A.; Sellin, P. J.; Basiricò, L.; Fraleoni-Morgera, A.; Fraboni, B.

    2016-04-01

    The use of organic materials as radiation detectors has grown, due to the easy processability in liquid phase at room temperature and the possibility to cover large areas by means of low cost deposition techniques. Direct charged-particle detectors based on solution-grown Organic Semiconducting Single Crystals (OSSCs) are shown to be capable to detect charged particles in pulse mode, with very good peak discrimination. The direct charged-particle detection in OSSCs has been assessed both in the planar and in the vertical axes, and a digital pulse processing algorithm has been used to perform pulse height spectroscopy and to study the charge collection efficiency as a function of the applied bias voltage. Taking advantage of the charge spectroscopy and the good peak discrimination of pulse height spectra, an Hecht-like behavior of OSSCs radiation detectors is demonstrated. It has been possible to estimate the mobility-lifetime value in organic materials, a fundamental parameter for the characterization of radiation detectors, whose results are equal to μτcoplanar = (5 .5 ± 0.6 ) × 10-6 cm2/V and μτsandwich = (1 .9 ± 0.2 ) × 10-6 cm2/V, values comparable to those of polycrystalline inorganic detectors. Moreover, alpha particles Time-of-Flight experiments have been carried out to estimate the drift mobility value. The results reported here indicate how charged-particle detectors based on OSSCs possess a great potential as low-cost, large area, solid-state direct detectors operating at room temperature. More interestingly, the good detection efficiency and peak discrimination observed for charged-particle detection in organic materials (hydrogen-rich molecules) are encouraging for their further exploitation in the detection of thermal and high-energy neutrons.

  14. Diameter-Specific Growth of Semiconducting SWNT Arrays Using Uniform Mo2C Solid Catalyst.

    PubMed

    Zhang, Shuchen; Tong, Lianming; Hu, Yue; Kang, Lixing; Zhang, Jin

    2015-07-22

    Semiconducting single-walled nanotube (s-SWNT) arrays with specific diameters are urgently demanded in the applications in nanoelectronic devices. Herein, we reported that by using uniform Mo2C solid catalyst, aligned s-SWNT (∼90%) arrays with narrow-diameter distribution (∼85% between 1.0 and 1.3 nm) on quartz substrate can be obtained. Mo2C nanoparticles with monodisperse sizes were prepared by using molybdenum oxide-based giant clusters, (NH4)42[Mo132O372(H3CCOO)30(H2O)72]·10H3CCOONH4·300H2O(Mo132), as the precursor that was carburized by a gas mixture of C2H5OH/H2 during a temperature-programmed reduction. In this approach, the formation of volatile MoO3 was inhibited due to the annealing and reduction at a low temperature. As a result, uniform Mo2C nanoparticles are formed, and their narrow size-dispersion strictly determines the diameter distribution of SWNTs. During the growth process, Mo2C selectively catalyzes the scission of C-O bonds of ethanol molecules, and the resultant absorbed oxygen (Oads) preferentially etches metallic SWNTs (m-SWNTs), leading to the high-yield of s-SWNTs. Raman spectroscopic analysis showed that most of the s-SWNTs can be identified as (14, 4), (13, 6), or (10, 9) tubes. Our findings open up the possibility of the chirality-controlled growth of aligned-SWNTs using uniform carbide nanoparticles as solid catalysts for practical nanoelectronics applications.

  15. Generalized chemical route to develop fatty acid capped highly dispersed semiconducting metal sulphide nanocrystals

    SciTech Connect

    Patel, Jayesh D.; Mighri, Frej; Ajji, Abdellah

    2012-08-15

    Highlights: ► Chemical route for the synthesis of OA-capped CdS, ZnS and PbS at low temperature. ► Synthesized nanocrystals via thermolysis of their metal–oleate complexes. ► Size quantized nanocrystals were highly dispersed and stable at room temperature. -- Abstract: This work deals with the synthesis of highly dispersed semiconducting nanocrystals (NCs) of cadmium sulphide (CdS), zinc sulphide (ZnS) and lead sulphide (PbS) through a simple and generalized process using oleic acid (OA) as surfactant. To synthesize these NCs, metal–oleate (M–O) complexes were obtained from the reaction at 140 °C between metal acetates and OA in hexanes media. Subsequently, M–O complexes were sulphurized using thioacetamide at the same temperature. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) characterizations show that the synthesized products are of nanoscale-size with highly crystalline cubic phase. The optical absorption of OA-capped metal sulphide NCs confirms that their size quantization induced a large shift towards visible region. Photoluminescence (PL) spectrum of CdS NCs shows a broad band-edge emission with shallow and deep-trap emissions, while PL spectrum of ZnS NCs reveals a broad emission due to defects states on the surface. The thermogravimetric analysis (TGA) and Fourier transform infrared (FTIR) spectroscopy indicate that fatty acid monolayers were bound strongly on the nanocrystal surface as a carboxylate and the two oxygen atoms of the carboxylate were coordinated symmetrically to the surface of the NCs. The strong binding between the fatty acid and the NCs surface enhances the stability of NCs colloids. In general, this generalized route has a great potential in developing nanoscale metal sulphides for opto-electronic devices.

  16. Plastic Optoelectronics: Injection Lasers Fabricated from Soluble Semiconducting Polymers and Bulk Heterojunction Solar Cells Fabricated from Soluble Semiconducting Polymers

    DTIC Science & Technology

    2008-04-17

    8217 printable ’ devices can be realized with significantly enhanced device lifetimes. Since the TiOX layer is generated by a sot-gel process, all fabrication...accumulation layer and the hole accumulation layer overlap. 150 V ground Source(holes) s-rce(electrous (a) Drain(electons) Drain( oles ) - . A:.. . . 4

  17. Nonlinear Dynamics of Semiconductor Device Circuits and Characterization of Deep Energy Levels in Mercury Cadmium Telluride by Using Magneto-Optical Spectroscopy.

    NASA Astrophysics Data System (ADS)

    Yu, Zhi

    1994-01-01

    The nonlinear dynamics of three physical systems has been investigated. Diode resonator systems are experimentally shown to display a period doubling route to chaos, quasiperiodic states, periodic locking states, and Hopf bifurcation to chaos. Particularly, the transition from quasiperiodic states to chaos in line-coupled systems agrees well with the Curry-Yorke model. The SPICE program has been modified to give realistic models for the diode resonator systems. A proportional feedback technique is applied to both single and line-coupled diode resonator systems. For single diode system, periodic orbits up to period 17 from a typical chaotic attractor are successfully stabilized. More interestingly, for the line-coupled diode systems not only are high periodic oscillations obtained easily, but for the first time quasiperiodic orbits are also stabilized. Synchronization of chaos to a common orbit has been observed by weakly coupling two tunnel diode relaxation oscillators. In addition, the "frequency-locked entrainment" states of two chaotic attractors have also been observed when appropriate coupling is applied. The dynamical Hall effect in n-InSb at liquid helium temperatures has been investigated. The experimental results are consistent with the theoretical predictions of Hupper and Scholl. The stability of chaos in this system against an external AC-driven source has been investigated and compared to that for a simple driven oscillator. The induced transitions from chaos to periodicity by an AC -driven source have been found in good agreement with a conjectured scaling law. Resonant Impact Ionization (RII) Spectroscopy, a new technique for studying low concentrations of trap levels in narrow-gap semiconductors, has been employed to investigate Hg interstitials in both bulk and LPE samples of Hg{_{1-x}} Cd_{x}Te with x value from 0.22 to 0.24. The RII spectroscopy of these samples, which are processed under different conditions to control the concentration of Hg

  18. First-principles calculations of conductivity in transparent semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Varley, Joel Basile

    2011-12-01

    polaron formation. Finally, we apply our acquired expertise to the issue of reducing the absorption edge of another wide-band-gap semiconducting oxide, TiO2, which is widely used for photocatalysis. Our conclusions resolve long-standing questions on the properties of N-doped titania, suggesting another application of acceptor doping in TCO materials.

  19. Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents.

    PubMed

    Kumar, Bharat; Falk, Abram L; Afzali, Ali; Tulevski, George S; Oida, Satoshi; Han, Shu-Jen; Hannon, James B

    2017-08-22

    High-performance logic based on carbon nanotubes (CNTs) requires high-density arrays of selectively placed semiconducting CNTs. Although polymer-wrapping methods can allow CNTs to be sorted to a >99.9% semiconducting purity, patterning these polymer-wrapped CNTs is an outstanding problem. We report the directed self-assembly of polymer-coated semiconducting CNTs using self-assembled monolayers that bind CNTs into arrays of patterned trenches. We demonstrate that CNTs can be placed into 100 nm wide HfO2 trenches with an electrical connection yield as high as 90% and into 50 nm wide trenches with a yield as high as 70%. Our directed self-assembly method is an important step forward in pitch scaling.

  20. Generalized Redox-Responsive Assembly of Carbon-Sheathed Metallic and Semiconducting Nanowire Heterostructures.

    PubMed

    Choi, Sinho; Kim, Jieun; Hwang, Dae Yeon; Park, Hyungmin; Ryu, Jaegeon; Kwak, Sang Kyu; Park, Soojin

    2016-02-10

    One-dimensional metallic/semiconducting materials have demonstrated as building blocks for various potential applications. Here, we report on a unique synthesis technique for redox-responsive assembled carbon-sheathed metal/semiconducting nanowire heterostructures that does not require a metal catalyst. In our approach, germanium nanowires are grown by the reduction of germanium oxide particles and subsequent self-catalytic growth during the thermal decomposition of natural gas, and simultaneously, carbon sheath layers are uniformly coated on the nanowire surface. This process is a simple, reproducible, size-controllable, and cost-effective process whereby most metal oxides can be transformed into metallic/semiconducting nanowires. Furthermore, the germanium nanowires exhibit stable chemical/thermal stability and outstanding electrochemical performance including a capacity retention of ∼96% after 1200 cycles at the 0.5-1C rate as lithium-ion battery anode.

  1. Nonlinear optical protection against frequency agile lasers

    SciTech Connect

    McDowell, V.P.

    1988-08-04

    An eye-protection or equipment-filter device for protection from laser energy is disclosed. The device may be in the form of a telescope, binoculars, goggles, constructed as part of equipment such as image intensifiers or range designators. Optical elements focus the waist of the beam within a nonlinear frequency-doubling crystal or nonlinear optical element or fiber. The nonlinear elements produce a harmonic outside the visible spectrum in the case of crystals, or absorb the laser energy in the case of nonlinear fibers. Embodiments include protectors for the human eye as well as filters for sensitive machinery such as TV cameras, FLIR systems or other imaging equipment.

  2. Electroluminescence of colloidal quasi-two-dimensional semiconducting CdSe nanostructures in a hybrid light-emitting diode

    SciTech Connect

    Selyukov, A. S. Vitukhnovskii, A. G.; Lebedev, V. S.; Vashchenko, A. A.; Vasiliev, R. B.; Sokolikova, M. S.

    2015-04-15

    We report on the results of studying quasi-two-dimensional nanostructures synthesized here in the form of semiconducting CdSe nanoplatelets with a characteristic longitudinal size of 20–70 nm and a thick-ness of a few atomic layers. Their morphology is studied using TEM and AFM and X-ray diffraction analysis; the crystal structure and sizes are determined. At room and cryogenic temperatures, the spectra and kinetics of the photoluminescence of such structures (quantum wells) are investigated. A hybrid light-emitting diode operating on the basis of CdSe nanoplatelets as a plane active element (emitter) is developed using the organic materials TAZ and TPD to form electron and hole transport layers, respectively. The spectral and current-voltage characteristics of the constructed device with a radiation wavelength λ = 515 nm are obtained. The device triggering voltage is 5.5 V (visible glow). The use of quasi-two-dimensional structures of this type is promising for hybrid light-emitting diodes with pure color and low operating voltages.

  3. Selective dispersion of large-diameter semiconducting single-walled carbon nanotubes with pyridine-containing copolymers.

    PubMed

    Berton, Nicolas; Lemasson, Fabien; Poschlad, Angela; Meded, Velimir; Tristram, Frank; Wenzel, Wolfgang; Hennrich, Frank; Kappes, Manfred M; Mayor, Marcel

    2014-01-29

    The purity of single-walled carbon nanotubes (SWNTs) is a key parameter for their integration in electronic, optoelectronic and photonic devices. Samples of pristine SWNTs are inhomogeneous in terms of electric behavior and diameter and contain a variety of amorphous carbon and catalyst residues. To obtain high performance devices, purification of SWNTs is required. Conjugated polymers have emerged as efficient solubilizing and sorting agents for small diameter SWNTs (HiPco tubes, 0.7 nm<Ø<1.1 nm). Nevertheless, reports on polymers able to efficiently sort large diameter SWNTs with Ø>1.1 nm are lacking. Several pyridine-containing copolymers were synthesized for this purpose and showed efficient and selective extraction of semiconducting large diameter SWNTs (PLV tubes, Ø>1.1 nm). High concentration and high purity suspensions are obtained without the use of ultracentrifugation, which gives an up-scaling potential of the method. The emission wavelength is in near infrared region around 1550 nm and fits with broadly used telecommunication wavelength window. The processes taking place at the interface were simulated by a newly designed hybrid coarse-grain model combining density functional theory and geometrical calculation to yield insights into the wrapping processes with an unprecedented level of details for such large diameter SWNTs. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Understanding and improving the mechanical stability of semiconducting polymers for flexible and stretchable electronics

    NASA Astrophysics Data System (ADS)

    Printz, Adam David

    Polymeric semiconductors offer the promise of low-cost, printable, and mechanically robust electronic devices for use in outdoor, portable, and wearable applications such as organic photovoltaics, biosensors, and electronic skins. However, many organic semiconductors are unable to accommodate the mechanical stresses these applications require, and it is therefore important to understand the factors and parameters that govern the mechanical stability of these materials. Chapter 1 provides a gentle introduction to the electronic and mechanical properties relevant to flexible and stretchable organic semiconductor devices. The idea of inherent competition between electronic performance and mechanical robustness is explored. Chapter 2 investigates the inherent competition between good electronic performance and mechanical robustness in poly(3-alkylthiophene)s. A key finding is a critical alkyl side-chain length that allows for good electronic performance and mechanical compliance. Chapter 3 and Appendix A are further studies on the properties of poly(3-alkylthiophene)s with side-chains close to the critical length to gain better understanding of the transition from good electronic properties and poor mechanical properties to poor electronic properties and good mechanical properties. Chapter 4 and Appendix B detail the effects on mechanical and electronic properties of statistical incorporation of unlike monomer into a low-bandgap polymer backbone in an effort to disrupt aggregation and improve mechanical compliance. Chapter 5 explores how the extent of molecular mixing of polythiophenes and fullerenes---materials common in organic photovoltaics---affects their mechanical properties. Chapter 6 describes the invention of a new technique to determine the yield point of thin films. A dependence on the alkyl-side chain length is observed, as well as a critical film thickness below which the yield point increases substantially. In Chapter 7, the weakly interacting H

  5. A new class of semiconducting polymers for bulk heterojunction solar cells with exceptionally high performance.

    PubMed

    Liang, Yongye; Yu, Luping

    2010-09-21

    Solar cells based on the polymer-fullerene bulk heterojunction (BHJ) concept are an attractive class of low-cost solar energy harvesting devices. Because the power conversion efficiency (PCE) of these solar cells is still significantly lower than that of their inorganic counterparts, however, materials design and device engineering efforts are directed toward improving their output. A variety of factors limit the performance of BHJ solar cells, but the properties of the materials in the active layer are the primary determinant of their overall efficiency. The ideal polymer in a BHJ structure should exhibit the following set of physical properties: a broad absorption with high coefficient in the solar spectrum to efficiently harvest solar energy, a bicontinuous network with domain width within twice that of the exciton diffusion length, and high donor-acceptor interfacial area to favor exciton dissociation and efficient transport of separated charges to the respective electrodes. To facilitate exciton dissociation, the lowest unoccupied molecular orbital (LUMO) energy level of the donor must have a proper match with that of the acceptor to provide enough driving force for charge separation. The polymer should have a low-lying highest occupied molecular orbital (HOMO) energy level to provide a large open circuit voltage (V(oc)). All of these desired properties must be synergistically integrated to maximize solar cell performance. However, it is difficult to design a polymer to fulfill all these requirements. In this Account, we summarize our recent progress in developing a new class of semiconducting polymers, which represents the first polymeric system to generate solar PCE greater than 7%. The polymer system is composed of thieno[3,4-b]thiophene and benzodithiophene alternating units. These polymers have low bandgaps and exhibit efficient absorption throughout the region of greatest photon flux in the solar spectrum (around 700 nm). The stabilization of the

  6. Spectroscopic properties of doped and defective semiconducting oxides from hybrid density functional calculations.

    PubMed

    Di Valentin, Cristiana; Pacchioni, Gianfranco

    2014-11-18

    CONSPECTUS: Very rarely do researchers use metal oxides in their pure and fully stoichiometric form. In most of the countless applications of these compounds, ranging from catalysis to electronic devices, metal oxides are either doped or defective because the most interesting chemical, electronic, optical, and magnetic properties arise when foreign components or defects are introduced in the lattice. Similarly, many metal oxides are diamagnetic materials and do not show a response to specific spectroscopies such as electron paramagnetic resonance (EPR) spectroscopy. However, doped or defective oxides may exhibit an interesting and informative paramagnetic behavior. Doped and defective metal oxides offer an expanding range of applications in contemporary condensed matter science; therefore researchers have devoted enormous effort to the understanding their physical and chemical properties. The interplay between experiment and computation is particularly useful in this field, and contemporary simulation techniques have achieved high accuracies with these materials. In this Account, we show how the direct comparison between spectroscopic experimental and computational data for some selected and relevant materials provides ways to understand and control these complex systems. We focus on the EPR properties and electronic transitions that arise from the presence of dopants and defects in bulk metal oxide materials. We analyze and compare the effect of nitrogen doping in TiO2 and ZnO (two semiconducting oxides) and MgO (a wide gap insulator) and examine the effect of oxygen deficiency in the semiconducting properties of TiO2-x, ZnO1-x, and WO3-x materials. We chose these systems because of their relevance in applications including photocatalysis, touch screens, electrodes in magnetic random access memories, and smart glasses. Density functional theory (DFT) provides the general computational framework used to illustrate the electronic structure of these systems. However

  7. Multimodal nonlinear nanophotonics (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kivshar, Yuri S.

    2017-05-01

    Nonlinear nanophotonics is a rapidly developing field of research with many potential applications for the design of nonlinear nanoantennas, light sources, nanolasers, and ultrafast miniature metadevices. A tight confinement of the local electromagnetic fields in resonant photonic nanostructures can boost nonlinear optical effects, thus offering versatile opportunities for the subwavelength control of light. To achieve the desired functionalities, it is essential to gain flexible control over the near- and far-field properties of nanostructures. To engineer nonlinear scattering from resonant nanoscale elements, both modal and multipolar control of the nonlinear response are widely exploited for enhancing the near-field interaction and optimizing the radiation directionality. Motivated by the recent progress of all-dielectric nanophotonics, where the electric and magnetic multipolar contributions may become comparable, here we review the advances in the recently emerged field of multipolar nonlinear nanophotonics, starting from earlier relevant studies of metallic and metal-dielectric structures supporting localized plasmonic resonances to then discussing the latest results for all-dielectric nanostructures driven by Mie-type multipolar resonances and optically induced magnetic response. These recent developments suggest intriguing opportunities for a design of nonlinear subwavelength light sources with reconfigurable radiation characteristics and engineering large effective optical nonlinearities at the nanoscale, which could have important implications for novel nonlinear photonic devices operating beyond the diffraction limit.

  8. Electromechanical properties of single-walled carbon nanotube devices on micromachined cantilevers

    NASA Astrophysics Data System (ADS)

    Jeon, Eun-Kyoung; Park, Chan-Hyun; Lee, Jung A.; Kim, Min-Seok; Lee, Kwang-Cheol; So, Hye-Mi; Ahn, Chiwon; Chang, Hyunju; Kong, Ki-jeong; Kim, Ju-Jin; Lee, Jeong-O.

    2012-11-01

    We have investigated the electromechanical properties of single-walled carbon nanotubes (SWNTs) by constructing carbon nanotube transistors on micro-cantilevers. SWNTs and ultra-long carbon nanotubes (UNTs) were grown on free-standing Si3N4 membranes by using chemical vapor deposition, and electrical contacts were generated with electron beam lithography and lift-off. The cantilevers bearing SWNT devices were micromachined so that hybrid cantilevers with various spring constants were fabricated. To measure the electromechanical properties of the SWNTs, precisely controlled forces were generated by a microbalance and applied to the hybrid cantilever devices. Upon bending, the conductances of the metallic and large-gap semiconducting UNTs showed no notable change, whereas the conductances of the small-gap semiconducting UNTs and networks of SWNTs increased. Numerical simulations of bended SWNT made using a multiscale simulator supported the hypothesis that the small-gap semiconducting SWNTs undergo a metallic transformation upon bending.

  9. The use of lasers for semiconducter scribing/singulation applications

    NASA Astrophysics Data System (ADS)

    Venkat, Sri; Dunsky, Corey

    2006-02-01

    Semiconductor manufacturing, is dominated by the relentless demand for electronic products with greater performance, minimized dimensions, increased sophistication, and higher speed, all at reduced process cost. Logic device manufacturers need to satisfy this demand by producing integrated circuits that meet the predicted density increase encapsulated in Moore's law. This has led to the use of low-κ dielectrics. For memory devices, thinner wafers are used to enable close stacking of multiple dies in a single low-profile package. And in a third market segment, newer photonic devices are using novel materials such as GaAs, SiC, GaN and sapphire. Traditional mechanical methods are struggling to meet the singulation needs in all three of these device types. Yet at the same time, market realities dictate that the effective cost for increased processing power, novel photonic performance, and higher memory density all continue to fall. As a result, laser-based methods are being adopted in all three areas. In this overview paper, we examine the drivers for each of these market segments and see how laser technology is meeting the singulation demands of current and future devices.

  10. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  11. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  12. Nanowire structures and electrical devices

    DOEpatents

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  13. Piezoelectric and Semiconducting Ribbon for Flexible Energy Harvesting

    DTIC Science & Technology

    2012-06-08

    Harvesting Device (a) Interdigitated electrode fabrication (b) Power output test 4 – PZT Energy Harvesting Device  Achieved voltage outputs of 1.5 V...f .~··I ., .. .6 0 .•• ~·· . 0.0 0.5 1.0 1.5 2.5 V (V) AC Interdigitated ...... - PZT ~================~~zro2 me1ubran 1 I I I I...c Q) ! ·c:; ~ I Q) 80 0 (.) 1 (.) ·c ....... (.) Q) ~ Pt bottom electrode Q) 40 0 N Q) 0... 0~------------------------------~ 10 J

  14. CoPt/CeO2 catalysts for the growth of narrow diameter semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Tang, Lei; Li, Taotao; Li, Chaowei; Ling, Lin; Zhang, Kai; Yao, Yagang

    2015-11-01

    For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduces the diameter distributions and even the chirality distributions of the as-grown SWNTs. Oxygen vacancies that are provided by mesoporous CeO2 are responsible for creating an oxidative environment to in situ etch metallic SWNTs (m-SWNTs). Atomic force microscope (AFM) and Raman spectroscopy characterizations indicate a narrow diameter distribution of 1.32 +/- 0.03 nm and the selective growth of s-SWNTs to 93%, respectively. In addition, electronic transport measurements also confirm that the Ion/Ioff ratio is mainly in the order of ~103. This work provides an effective strategy for the facile fabrication of narrow diameter distributed s-SWNTs, which will be beneficial to fundamental research and the broad application of SWNTs for future nanoelectronics.For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduces the diameter distributions and even the chirality distributions of the as-grown SWNTs. Oxygen vacancies that are provided by mesoporous CeO2 are responsible for creating an oxidative environment to in situ etch metallic SWNTs (m-SWNTs). Atomic force microscope (AFM) and Raman spectroscopy characterizations indicate a narrow diameter distribution of 1.32 +/- 0.03 nm and the selective growth of s-SWNTs to 93%, respectively. In addition

  15. A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field

    NASA Astrophysics Data System (ADS)

    Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

    2016-06-01

    The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m

  16. Donor-acceptor semiconducting polymers for organic photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Kularatne, Ruvini S.

    Organic solar cells hold the key for future energy demand due to their unique properties such as low cost, light weight and flexibility. A remarkable amount of effort has been done to improve the power conversion efficiencies in bulk heterojunction solar cells (BHJ). Considerable effort has been done to develop novel donor-acceptor copolymers to improve the absorbance of the copolymer in the visible to near Infrared (IR) regions and to lower the highest occupied molecular orbital (HOMO) energy level of the conjugated polymer as these properties improve the short circuit current density (J SC) and the open circuit voltage (VOC) and hence the power conversion efficiency (PCE) of the BHJ solar cells. In this dissertation, Chapter 1 describes the synthesis and photovoltaic performance of donor-acceptor semiconducting polymers that have been reported during the last decade. 9,9-Dialkyl-2,7-fluorene (FL), 2,7-carbazole (CZ), cyclopenta[2,1-b:3,4-b']dithiophene (CPDT), dithieno[3,2-b:2',3'-d]silole (DTS), dithieno[3,2- b:2',3'-d]pyrrole (DTP), benzo[1,2-b:4,5- b']dithiophene (BDT), benzo[1,2-b:4,5- b']difurane (BDF) building blocks and their donor-acceptor copolymers and their photovoltaic properties have been discussed in this chapter. Chapter 2 describes the synthesis and photovoltaic properties of two novel donor-acceptor polymers P1 and P2 containing benzodithiophene with 3,3',5-trihexylbithienyl substituents as the donor unit with Benzo[c][1,2,5]thiadiazole and 5-hexylthieno[3,4- c]pyrrole-4,6-dione as acceptor building blocks. The photovoltaic properties of the synthesized donor-acceptor polymers were investigated in bulk heterojunction solar cells with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) acceptor. Chapter 3 describes the synthesis of three novel donor-acceptor copolymers P3, P4 and P5 via Stille coupling polymerization with bithienyl substituted BDT as the donor with three different acceptors; 5,6-difluorobenzo[c][1,2,5]thiadiazole, 4,7-di(thiophen-2

  17. Outlook and emerging semiconducting materials for ambipolar transistors.

    PubMed

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-02-26

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection.

  18. Realizing semiconductivity by a large bandgap tuning in Bi4Ti3O12 via inserting La1-xSrxMnO3 perovskite layers

    NASA Astrophysics Data System (ADS)

    Wang, Jianlin; Chen, Zezhi; Huang, Haoliang; Cui, Jiameng; Zhang, Wenhua; Fu, Zhengping; Peng, Ranran; Yan, Wensheng; Lu, Yalin

    2017-05-01

    Bismuth layer structured Aurivillius oxides have long been considered as traditional ferroelectric dielectrics, and they are feasible platforms incubating magnetic, ferroelectric, photonic, microwave, etc. properties for many important applications. It has been a longstanding challenge to achieve a certain charge carrier concentration and to narrow the bandgap in such transition metal complex oxides, yet realizing that semiconductivity is necessary for potential integration functions such as junctions in oxide optoelectronic devices. By inserting La1-xSrxMnO3 into the typical Bi4Ti3O12 ferroelectric host, we demonstrate semiconductivity and large bandgap tuning in Bi4Ti3O12-La1-xSrxMnO3 (0.3 ≤ x ≤ 0.7) solid solutions, in which a minimum resistivity value of ρ = 5021 Ω.cm and an optical bandgap value of Eg = 1.97 eV are obtained. Soft X-ray absorption spectra provide Mn and Ti charge valence states, indicating an almost constant Mn3.2+ state and an increase towards Ti4+ when raising the La/Sr ratio.

  19. Growth of Horizontal Semiconducting SWNT Arrays with Density Higher than 100 tubes/μm using Ethanol/Methane Chemical Vapor Deposition.

    PubMed

    Kang, Lixing; Zhang, Shuchen; Li, Qingwen; Zhang, Jin

    2016-06-01

    Horizontally aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays with a certain density are highly desirable for future electronic devices. However, obtaining s-SWNT arrays with simultaneously high purity and high density is extremely challenging. We report herein a rational approach, using ethanol/methane chemical vapor deposition, to grow SWNT arrays with a s-SWNT ratio over 91% and a density higher than 100 tubes/μm. In this approach, at a certain temperature, ethanol was fully thermally decomposed to feed carbon atoms for Trojan-Mo catalysts growing high density SWNT arrays, while the incomplete pyrolysis of methane provided appropriate active H radicals with the help of catalytic sapphire surface to inhibit metallic SWNT (m-SWNT) growth. The synergistic effect of ethanol/methane mixtures resulted in enriched semiconducting SWNTs and no obvious decrease in nanotube density due to their milder reactivity and higher controllability at suitable growth conditions. This work represents a step forward in large-area synthesis of high density s-SWNT arrays on substrates and demonstrates potential applications in scalable carbon nanotube electronics.

  20. Study of organic-inorganic hetero-interfaces and electrical transport in semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Wagner, Sean Robert

    As the electronics industry continues to evolve and move towards functional electronic devices with increasing complexity and functionality, it becomes important to explore materials outside the regime of conventional semiconductors. Organic semiconducting small molecules have received a large amount of attention due to their high degree of flexibility, the option to perform molecular synthesis to modify their electronic and magnetic properties, and their ability to organize into highly-ordered functionalized nanostructures and thin films. Being able to form complex nanostructures and thin films with molecular precision, while maintaining the ability to tune properties through modifications in the molecular chemistry could result in vast improvements in conventional device architectures. However, before this is realized, there still remains a significant lack of understanding regarding how these molecules interact with various substrate surfaces as well as their intermolecular interactions. The interplay between these interactions can produce drastic changes in the molecular orientation and ordering at the hetero-interface, which can affect the transport properties of the molecular thin film and ultimately modify the performance of the organic electronic device. This study first focuses on the growth dynamics, molecular ordering, and molecular orientation of metal phthalocyanine (MPc) molecules, particularly on Si, a substrate which is notoriously difficult to form an organized organic thin film on due to the surface dangling bonds. By deactivating these bonds, the formation of a highly ordered organic molecular thin film becomes possible. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, low-energy electron diffraction, and density functional theory calculations, the growth evolution of MPc molecules ( M = Zn, Cu, Co) from the single molecule level to multilayered films on the deactivated Si(111)-B surface is investigated. Initial tests are

  1. Biomedical Detection via Macro- and Nano-Sensors Fabricated with Metallic and Semiconducting Oxides

    PubMed Central

    Hahm, Jong-In

    2013-01-01

    Originally developed as gas sensors, the benefits of metallic and semiconducting oxide materials are now being realized in other areas of sensing, such as chemical, environmental, and biomedical monitoring and detection. Metallic and semiconducting oxides have continuously expanded their roles to date, and have also established their significance in biosensing by utilizing a variety of modes for signal generation and detection mechanism. These sensors are typically based either on their optical, electrochemical, electrical, gravimetric, acoustic, and magnetic properties for signal transduction. This article reviews such biosensors that employ metallic and semiconducting oxides as active sensing elements to detect nucleic acids, proteins, cells, and a variety of important biomarkers, both in thin film and one-dimensional forms. Specific oxide materials (Mx Oy ) examined comprehensively in this article include M = Fe, Cu, Si, Zn, Sn, In. The derivatives of these oxide materials resulting from incorporation of dopants are examined as well. The crystalline structures and unique properties that may be exploited for various biosensing applications are discussed, and recent efforts investigating the feasibility of using these oxide materials in biosensor technology are described. Key biosensor characteristics resulting from reduced dimensionality are overviewed under the motif of planar and one-dimensional sensors. This article also provides insight into current challenges facing biosensor applications for metallic and semiconducting oxides. In addition, future outlook in this particular field as well as different impacts on biology and medicine are addressed. PMID:23627064

  2. Coherent phonon dynamics in semiconducting carbon nanotubes: a quantitative study of electron-phonon coupling.

    PubMed

    Lüer, Larry; Gadermaier, Christoph; Crochet, Jared; Hertel, Tobias; Brida, Daniele; Lanzani, Guglielmo

    2009-03-27

    We excite and detect coherent phonons in semiconducting (6,5) carbon nanotubes via a sub-10-fs pump-probe technique. Simulation of the amplitude and phase profile via time-dependent wave packet theory yields excellent agreement with experimental results under the assumption of molecular excitonic states and allows determining the electron-phonon coupling strength for the two dominant vibrational modes.

  3. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

    PubMed Central

    Reis, Wieland G.; Weitz, R. Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-01-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production. PMID:27188435

  4. Use of semiconducting laser in drug-induced chronic bilateral inflammation of parotid glands

    NASA Astrophysics Data System (ADS)

    Grzesiak-Janas, Grazyna

    1997-10-01

    A case of chronic bilateral inflammation of parotid glands in a patient as a results of complication induced by the drug Ospolot in the treatment of epilepsy was presented. Apart from conventional methods a semiconducting laser was used. The laser beam had beneficial effect on elimination of pain and increase in the parotid gland secretion activity.

  5. ac Electrokinetic phenomena over semiconductive surfaces: effective electric boundary conditions and their applications.

    PubMed

    Zhao, Cunlu; Yang, Chun

    2011-06-01

    Electrokinetic boundary conditions are derived for ac electrokinetic phenomena over leaky dielectric (i.e., semiconducting) surfaces. Such boundary conditions correlate the electric potentials across a semiconductor-electrolyte interface (consisting of an electric double layer inside the electrolyte solution and a space charge layer inside the semiconductor) in an ac electric field with arbitrary wave forms. The presented electrokinetic boundary conditions allow for evaluation of the induced ζ potential contributed by both bond charges (due to electric polarization) and free charges (due to electric conduction) from the leaky dielectric materials. Two well-known limiting cases, (i) the conventional insulating boundary condition and (ii) the perfectly polarizable boundary condition, can be recovered from the generalized electrokinetic boundary conditions derived in the present paper. Subsequently, we demonstrate the implementation of the derived boundary conditions for analyzing the ac induced-charge electrokinetic flow around a semiconducting cylinder. The results show that the flow circulations exist around the semiconducting cylinder and become stronger in the ac field with a lower frequency and around the semiconducting cylinder with a higher conductivity.

  6. Migrating from superconducting to semiconducting YBCO thin film bolometers as future far-infrared imaging pixels

    NASA Astrophysics Data System (ADS)

    Jagtap, Vishal S.; Longhin, Mattia; Kulsreshath, Mukesh K.; Kreisler, Alain J.; Dégardin, Annick F.

    2010-04-01

    YBa2Cu3O6+x compounds are well known to exhibit superconducting properties for x > 0.5 and semiconducting properties for lower oxygen content. Superconducting YBCO was obtained commercially; the semiconducting material was deposited by sputtering at room temperature. In order to migrate from superconducting to uncooled semiconducting far-infrared bolometer technologies, we have first realized and compared the performance of 2 × 2 pixel arrays made from both materials deposited on MgO substrates. Pixels were in the shape of meanders, embedded in an area of about 1 mm2. Pixel detectivity and thermal crosstalk were studied in the 1 Hz to 100 kHz modulation frequency range by using a 850 nm solid state laser. Secondly we have improved the geometry of semiconducting YBCO bolometers fabricated on silicon substrates, in order to match their impedance with the impedance of the antenna required for working in the THz range. First optical results are also presented, where both regular bolometric and pyroelectric responses are exhibited.

  7. Semiconducting nanotube dominant chemical vapor deposition synthesis of isopropanol carbon feedstock

    NASA Astrophysics Data System (ADS)

    Che, Yuchi; Wang, Chuan; Liu, Jia; Lin, Xue; Wong, H.-S. Philip; Zhou, Chongwu

    2012-02-01

    The development of guided chemical vapor deposition (CVD) growth of single wall carbon nanotubes provides great platform for wafer-scale integration of aligned nanotube into circuits and systems. However, the co-existence of the metallic and semiconducting nanotubes is still a major problem for the development of carbon nanotube based nanoelectronics. To address this limitation, we developed a method to get semiconducting dominant nanotube by using isopropanol carbon feedstock. We achieved a purity of 87% of semiconducting nanotube growth, which was verified by measuring single nanotube transistors fabricated from aligned nanotube arrays. Besides, Raman spectrum was characterized to confirm the enhanced fraction of semiconducting nanotube as well. To further understand chemical mechanism of synthesis at atomic level, we performed the mass spectrum study and compared the measurement results from different carbon source. Furthermore, to discuss the future application of this synthesis method, we fabricated thin-film transistor from as-grown nanotube network. Transistor with on/off ratio over 104 and mobility up to 116 cm2/vs was achieved, which shows great potential for thin-film transistor applications.

  8. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

    NASA Astrophysics Data System (ADS)

    Reis, Wieland G.; Weitz, R. Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-05-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.

  9. Nonlinearity without superluminality

    NASA Astrophysics Data System (ADS)

    Kent, Adrian

    2005-07-01

    Quantum theory is compatible with special relativity. In particular, though measurements on entangled systems are correlated in a way that cannot be reproduced by local hidden variables, they cannot be used for superluminal signaling. As Czachor, Gisin, and Polchinski pointed out, this is not generally true of general nonlinear modifications of the Schrödinger equation. Excluding superluminal signaling has thus been taken to rule out most nonlinear versions of quantum theory. The no-superluminal-signaling constraint has also been used for alternative derivations of the optimal fidelities attainable for imperfect quantum cloning and other operations. These results apply to theories satisfying the rule that their predictions for widely separated and slowly moving entangled systems can be approximated by nonrelativistic equations of motion with respect to a preferred time coordinate. This paper describes a natural way in which this rule might fail to hold. In particular, it is shown that quantum readout devices which display the values of localized pure states need not allow superluminal signaling, provided that the devices display the values of the states of entangled subsystems as defined in a nonstandard, although natural, way. It follows that any locally defined nonlinear evolution of pure states can be made consistent with Minkowski causality.

  10. Nonlinearity without superluminality

    SciTech Connect

    Kent, Adrian

    2005-07-15

    Quantum theory is compatible with special relativity. In particular, though measurements on entangled systems are correlated in a way that cannot be reproduced by local hidden variables, they cannot be used for superluminal signaling. As Czachor, Gisin, and Polchinski pointed out, this is not generally true of general nonlinear modifications of the Schroedinger equation. Excluding superluminal signaling has thus been taken to rule out most nonlinear versions of quantum theory. The no-superluminal-signaling constraint has also been used for alternative derivations of the optimal fidelities attainable for imperfect quantum cloning and other operations. These results apply to theories satisfying the rule that their predictions for widely separated and slowly moving entangled systems can be approximated by nonrelativistic equations of motion with respect to a preferred time coordinate. This paper describes a natural way in which this rule might fail to hold. In particular, it is shown that quantum readout devices which display the values of localized pure states need not allow superluminal signaling, provided that the devices display the values of the states of entangled subsystems as defined in a nonstandard, although natural, way. It follows that any locally defined nonlinear evolution of pure states can be made consistent with Minkowski causality.

  11. High-performance partially aligned semiconductive single-walled carbon nanotube transistors achieved with a parallel technique.

    PubMed

    Wang, Yilei; Pillai, Suresh Kumar Raman; Chan-Park, Mary B

    2013-09-09

    Single-walled carbon nanotubes (SWNTs) are widely thought to be a strong contender for next-generation printed electronic transistor materials. However, large-scale solution-based parallel assembly of SWNTs to obtain high-performance transistor devices is challenging. SWNTs have anisotropic properties and, although partial alignment of the nanotubes has been theoretically predicted to achieve optimum transistor device performance, thus far no parallel solution-based technique can achieve this. Herein a novel solution-based technique, the immersion-cum-shake method, is reported to achieve partially aligned SWNT networks using semiconductive (99% enriched) SWNTs (s-SWNTs). By immersing an aminosilane-treated wafer into a solution of nanotubes placed on a rotary shaker, the repetitive flow of the nanotube solution over the wafer surface during the deposition process orients the nanotubes toward the fluid flow direction. By adjusting the nanotube concentration in the solution, the nanotube density of the partially aligned network can be controlled; linear densities ranging from 5 to 45 SWNTs/μm are observed. Through control of the linear SWNT density and channel length, the optimum SWNT-based field-effect transistor devices achieve outstanding performance metrics (with an on/off ratio of ~3.2 × 10(4) and mobility 46.5 cm(2) /Vs). Atomic force microscopy shows that the partial alignment is uniform over an area of 20 × 20 mm(2) and confirms that the orientation of the nanotubes is mostly along the fluid flow direction, with a narrow orientation scatter characterized by a full width at half maximum (FWHM) of <15° for all but the densest film, which is 35°. This parallel process is large-scale applicable and exploits the anisotropic properties of the SWNTs, presenting a viable path forward for industrial adoption of SWNTs in printed, flexible, and large-area electronics.

  12. Spin transport in lateral structures with semiconducting channel

    NASA Astrophysics Data System (ADS)

    Zainuddin, Abu Naser

    Spintronics is an emerging field of electronics with the potential to be used in future integrated circuits. Spintronic devices are already making their mark in storage technologies in recent times and there are proposals for using spintronic effects in logic technologies as well. So far, major improvement in spintronic effects, for example, the `spin-valve' effect, is being achieved in metals or insulators as channel materials. But not much progress is made in semiconductors owing to the difficulty in injecting spins into them, which has only very recently been overcome with the combined efforts of many research groups around the world. The key motivations for semiconductor spintronics are their ease in integration with the existing semiconductor technology along with the gate controllability. At present semiconductor based spintronic devices are mostly lateral and are showing a very poor performance compared to their metal or insulator based vertical counterparts. The objective of this thesis is to analyze these devices based on spin-transport models and simulations. At first a lateral spin-valve device is modeled with the spin-diffusion equation based semiclassical approach. Identifying the important issues regarding the device performance, a compact circuit equivalent model is presented which would help to improve the device design. It is found that the regions outside the current path also have a significant influence on the device performance under certain conditions, which is ordinarily neglected when only charge transport is considered. Next, a modified spin-valve structure is studied where the spin signal is controlled with a gate in between the injecting and detecting contacts. The gate is used to modulate the rashba spin-orbit coupling of the channel which, in turn, modulates the spin-valve signal. The idea of gate controlled spin manipulation was originally proposed by Datta and Das back in 1990 and is called 'Datta-Das' effect. In this thesis, we have

  13. Direct attachment of DNA to semiconducting surfaces for biosensor applications.

    PubMed

    Fahrenkopf, Nicholas M; Shahedipour-Sandvik, Fatemeh; Tokranova, Natalya; Bergkvist, Magnus; Cady, Nathaniel C

    2010-11-01

    In this work we propose a novel method of immobilizing nucleic acids for field effect or high electron mobility transistor-based biosensors. The naturally occurring 5' terminal phosphate group on nucleic acids was used to coordinate with semiconductor and metal oxide surfaces. We demonstrate that DNA can be directly immobilized onto ZrO(2), AlGaN, GaN, and HfO(2) while retaining its ability to hybridize to target sequences with high specificity. By directly immobilizing the probe molecule to the sensor surface, as opposed to conventional crosslinking strategies, the number of steps in device fabrication is reduced. Furthermore, hybridization to target strands occurs closer to the sensor surface, which has the potential to increase device sensitivity by reducing the impact of the Debye screening length. Copyright © 2010 Elsevier B.V. All rights reserved.

  14. Silicon-organic hybrid devices

    NASA Astrophysics Data System (ADS)

    Alloatti, L.; Korn, D.; Pfeifle, J.; Palmer, R.; Koeber, S.; Baier, M.; Schmogrow, R.; Diebold, Sebastian; Pahl, P.; Zwick, T.; Yu, H.; Bogaerts, W.; Baets, R.; Fournier, M.; Fedeli, J.; Dinu, R.; Koos, C.; Freude, W.; Leuthold, J.

    2013-02-01

    Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order nonlinear materials allow building high-speed and low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on a 90 GHz bandwidth phase modulator, and on a 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By using liquid-crystal claddings instead, we show experimentally that phase shifters with record-low power consumption and ultra-low voltage-length product of VπL = 0.06 Vmm. Secondorder nonlinear materials, moreover, allow creating nonlinear waveguides for sum- or difference-frequency generation, and for lowest-noise optical parametric amplification. These processes are exploited for a large variety of applications, like in the emerging field of on-chip generation of mid-IR wavelengths, where pump powers are significantly smaller compared to equivalent devices using third-order nonlinear materials. In this work, we present the first SOH waveguide design suited for second-order nonlinear processes. We predict for our device an amplification of 14 dB/cm assuming a conservative χ(2)-nonlinearity of 230 pm/V and a CW pump power as low as 20 dBm.

  15. Determining the nature of the gap in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Prestigiacomo, J. C.; Nath, A.; Osofsky, M. S.; Hernández, S. C.; Wheeler, V. D.; Walton, S. G.; Gaskill, D. K.

    2017-02-01

    Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap.

  16. Determining the nature of the gap in semiconducting graphene.

    PubMed

    Prestigiacomo, J C; Nath, A; Osofsky, M S; Hernández, S C; Wheeler, V D; Walton, S G; Gaskill, D K

    2017-02-09

    Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap.

  17. Determining the nature of the gap in semiconducting graphene

    PubMed Central

    Prestigiacomo, J. C.; Nath, A.; Osofsky, M. S.; Hernández, S. C.; Wheeler, V. D.; Walton, S. G.; Gaskill, D. K.

    2017-01-01

    Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap. PMID:28181521

  18. Nonlinear optical inves

    NASA Astrophysics Data System (ADS)

    Zidan, M. D.; Arfan, A.; Allahham, A.

    2017-03-01

    Z-scan technique was used to investigate the nonlinear optical properties of Quinine and 1-(carboxymethyl)-6-methoxy-4-(3-(3-vinylpiperidin-4-yl) propanoyl) quinolin-1-ium chloride (Quinotoxine) salts. The two salts were characterized using UV-visible, FTIR and NMR measurements. The characterization spectra confirm the expected molecular structure of the prepared "Quinotoxine " salt. The z-scan measurements were performed with a CW Diode laser at 635 nm wavelength and 26 mW power. The nonlinear absorption coefficient (β), nonlinear refractive index (n2), the ground-state absorption cross sections (σg), the excited-state absorption cross sections (σex) and thermo-optic coefficient of the samples were determined. Our results reveal that the σex is higher than the σg indicating that the reverse saturable absorption (RSA) is the dominating mechanism for the observed absorption nonlinearities. The results suggest that this material should be considered as a promising candidate for future optical devices applications.

  19. Modeling and Simulation of Nonlinear Transmission Lines

    DTIC Science & Technology

    2010-01-01

    Modeling and Simulation of Nonlinear Transmission Lines by Frank Crowne ARL -TR-5062 January 2010...longer needed. Do not return it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL -TR-5062 January 2010 Modeling...and Simulation of Nonlinear Transmission Lines Frank Crowne Sensors and Electron Devices Directorate, ARL

  20. Nonlinear graphene plasmonics (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Cox, Joel D.; Marini, Andrea; Garcia de Abajo, Javier F.

    2016-09-01

    The combination of graphene's intrinsically-high nonlinear optical response with its ability to support long-lived, electrically tunable plasmons that couple strongly with light has generated great expectations for application of the atomically-thin material to nanophotonic devices. These expectations are mainly reinforced by classical analyses performed using the response derived from extended graphene, neglecting finite-size and nonlocal effects that become important when the carbon layer is structured on the nanometer scale in actual device designs. Based on a quantum-mechanical description of graphene using tight-binding electronic states combined with the random-phase approximation, we show that finite-size effects produce large contributions that increase the nonlinear response associated with plasmons in nanostructured graphene to significantly higher levels than previously thought, particularly in the case of Kerr-type optical nonlinearities. Motivated by this finding, we discuss and compare saturable absorption in extended and nanostructured graphene, with or without plasmonic enhancement, within the context of passive mode-locking for ultrafast lasers. We also explore the possibility of high-harmonic generation in doped graphene nanoribbons and nanoislands, where illumination by an infrared pulse of moderate intensity, tuned to a plasmon resonance, is predicted to generate light at harmonics of order 13 or higher, extending over the visible and UV regimes. Our atomistic description of graphene's nonlinear optical response reveals its complex nature in both extended and nanostructured systems, while further supporting the exceptional potential of this material for nonlinear nanophotonic devices.

  1. Forward model nonlinearity versus inverse model nonlinearity

    USGS Publications Warehouse

    Mehl, S.

    2007-01-01

    The issue of concern is the impact of forward model nonlinearity on the nonlinearity of the inverse model. The question posed is, "Does increased nonlinearity in the head solution (forward model) always result in increased nonlinearity in the inverse solution (estimation of hydraulic conductivity)?" It is shown that the two nonlinearities are separate, and it is not universally true that increased forward model nonlinearity increases inverse model nonlinearity. ?? 2007 National Ground Water Association.

  2. Continuous control of the nonlinearity phase for harmonic generations.

    PubMed

    Li, Guixin; Chen, Shumei; Pholchai, Nitipat; Reineke, Bernhard; Wong, Polis Wing Han; Pun, Edwin Yue Bun; Cheah, Kok Wai; Zentgraf, Thomas; Zhang, Shuang

    2015-06-01

    The capability of locally engineering the nonlinear optical properties of media is crucial in nonlinear optics. Although poling is the most widely employed technique for achieving locally controlled nonlinearity, it leads only to a binary nonlinear state, which is equivalent to a discrete phase change of π in the nonlinear polarizability. Here, inspired by the concept of spin-rotation coupling, we experimentally demonstrate nonlinear metasurfaces with homogeneous linear optical properties but spatially varying effective nonlinear polarizability with continuously controllable phase. The continuous phase control over the local nonlinearity is demonstrated for second and third harmonic generation by using nonlinear metasurfaces consisting of nanoantennas of C3 and C4 rotational symmetries, respectively. The continuous phase engineering of the effective nonlinear polarizability enables complete control over the propagation of harmonic generation signals. Therefore, this method seamlessly combines the generation and manipulation of harmonic waves, paving the way for highly compact nonlinear nanophotonic devices.

  3. Nonlinear channelizer.

    PubMed

    In, Visarath; Longhini, Patrick; Kho, Andy; Neff, Joseph D; Leung, Daniel; Liu, Norman; Meadows, Brian K; Gordon, Frank; Bulsara, Adi R; Palacios, Antonio

    2012-12-01

    The nonlinear channelizer is an integrated circuit made up of large parallel arrays of analog nonlinear oscillators, which, collectively, serve as a broad-spectrum analyzer with the ability to receive complex signals containing multiple frequencies and instantaneously lock-on or respond to a received signal in a few oscillation cycles. The concept is based on the generation of internal oscillations in coupled nonlinear systems that do not normally oscillate in the absence of coupling. In particular, the system consists of unidirectionally coupled bistable nonlinear elements, where the frequency and other dynamical characteristics of the emergent oscillations depend on the system's internal parameters and the received signal. These properties and characteristics are being employed to develop a system capable of locking onto any arbitrary input radio frequency signal. The system is efficient by eliminating the need for high-speed, high-accuracy analog-to-digital converters, and compact by making use of nonlinear coupled systems to act as a channelizer (frequency binning and channeling), a low noise amplifier, and a frequency down-converter in a single step which, in turn, will reduce the size, weight, power, and cost of the entire communication system. This paper covers the theory, numerical simulations, and some engineering details that validate the concept at the frequency band of 1-4 GHz.

  4. Nonlinear channelizer

    NASA Astrophysics Data System (ADS)

    In, Visarath; Longhini, Patrick; Kho, Andy; Neff, Joseph D.; Leung, Daniel; Liu, Norman; Meadows, Brian K.; Gordon, Frank; Bulsara, Adi R.; Palacios, Antonio

    2012-12-01

    The nonlinear channelizer is an integrated circuit made up of large parallel arrays of analog nonlinear oscillators, which, collectively, serve as a broad-spectrum analyzer with the ability to receive complex signals containing multiple frequencies and instantaneously lock-on or respond to a received signal in a few oscillation cycles. The concept is based on the generation of internal oscillations in coupled nonlinear systems that do not normally oscillate in the absence of coupling. In particular, the system consists of unidirectionally coupled bistable nonlinear elements, where the frequency and other dynamical characteristics of the emergent oscillations depend on the system's internal parameters and the received signal. These properties and characteristics are being employed to develop a system capable of locking onto any arbitrary input radio frequency signal. The system is efficient by eliminating the need for high-speed, high-accuracy analog-to-digital converters, and compact by making use of nonlinear coupled systems to act as a channelizer (frequency binning and channeling), a low noise amplifier, and a frequency down-converter in a single step which, in turn, will reduce the size, weight, power, and cost of the entire communication system. This paper covers the theory, numerical simulations, and some engineering details that validate the concept at the frequency band of 1-4 GHz.

  5. Nonlinear terahertz superconducting plasmonics

    NASA Astrophysics Data System (ADS)

    Wu, Jingbo; Zhang, Caihong; Liang, Lanju; Jin, Biaobing; Kawayama, Iwao; Murakami, Hironaru; Kang, Lin; Xu, Weiwei; Wang, Huabing; Chen, Jian; Tonouchi, Masayoshi; Wu, Peiheng

    2014-10-01

    Nonlinear terahertz (THz) transmission through subwavelength hole array in superconducting niobium nitride (NbN) film is experimentally investigated using intense THz pulses. The good agreement between the measurement and numerical simulations indicates that the field strength dependent transmission mainly arises from the nonlinear properties of the superconducting film. Under weak THz pulses, the transmission peak can be tuned over a frequency range of 145 GHz which is attributed to the high kinetic inductance of 50 nm-thick NbN film. Utilizing the THz pump-THz probe spectroscopy, we study the dynamic process of transmission spectra and demonstrate that the transition time of such superconducting plasmonic device is within 5 ps.

  6. Nonlinear terahertz superconducting plasmonics

    SciTech Connect

    Wu, Jingbo; Liang, Lanju; Jin, Biaobing E-mail: tonouchi@ile.osaka-u.ac.jp Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng E-mail: tonouchi@ile.osaka-u.ac.jp; Zhang, Caihong; Kawayama, Iwao; Murakami, Hironaru; Tonouchi, Masayoshi E-mail: tonouchi@ile.osaka-u.ac.jp; Wang, Huabing

    2014-10-20

    Nonlinear terahertz (THz) transmission through subwavelength hole array in superconducting niobium nitride (NbN) film is experimentally investigated using intense THz pulses. The good agreement between the measurement and numerical simulations indicates that the field strength dependent transmission mainly arises from the nonlinear properties of the superconducting film. Under weak THz pulses, the transmission peak can be tuned over a frequency range of 145 GHz which is attributed to the high kinetic inductance of 50 nm-thick NbN film. Utilizing the THz pump-THz probe spectroscopy, we study the dynamic process of transmission spectra and demonstrate that the transition time of such superconducting plasmonic device is within 5 ps.

  7. Nonlinear metamaterials for holography

    PubMed Central

    Almeida, Euclides; Bitton, Ora

    2016-01-01

    A hologram is an optical element storing phase and possibly amplitude information enabling the reconstruction of a three-dimensional image of an object by illumination and scattering of a coherent beam of light, and the image is generated at the same wavelength as the input laser beam. In recent years, it was shown that information can be stored in nanometric antennas giving rise to ultrathin components. Here we demonstrate nonlinear multilayer metamaterial holograms. A background free image is formed at a new frequency—the third harmonic of the illuminating beam. Using e-beam lithography of multilayer plasmonic nanoantennas, we fabricate polarization-sensitive nonlinear elements such as blazed gratings, lenses and other computer-generated holograms. These holograms are analysed and prospects for future device applications are discussed. PMID:27545581

  8. Nonlinear metamaterials for holography

    NASA Astrophysics Data System (ADS)

    Almeida, Euclides; Bitton, Ora; Prior, Yehiam

    2016-08-01

    A hologram is an optical element storing phase and possibly amplitude information enabling the reconstruction of a three-dimensional image of an object by illumination and scattering of a coherent beam of light, and the image is generated at the same wavelength as the input laser beam. In recent years, it was shown that information can be stored in nanometric antennas giving rise to ultrathin components. Here we demonstrate nonlinear multilayer metamaterial holograms. A background free image is formed at a new frequency--the third harmonic of the illuminating beam. Using e-beam lithography of multilayer plasmonic nanoantennas, we fabricate polarization-sensitive nonlinear elements such as blazed gratings, lenses and other computer-generated holograms. These holograms are analysed and prospects for future device applications are discussed.

  9. Magnetic and electron-transport properties of spin-gapless semiconducting CoFeCrAl films

    NASA Astrophysics Data System (ADS)

    Sellmyer, David; Jin, Yunlong; Kharel, Parashu; Valloppilly, Shah; George, Tom; Balasubramanian, Balamurugan; Skomski, Ralph

    Recently, spin-gapless semiconductors (SGS) with a semiconducting or insulating gap in one spin channel and zero gap in the other at the Fermi level have attracted much attention due to their new functionalities such as voltage-tunable spin polarization, the ability to switch between spin-polarized n-type and p-type conduction, high spin polarization and carrier mobility. For the development of spintronic devices utilizing SGS, it is necessary to have a better understanding of the magnetic and transport properties of the thin films of these materials. In this study, the structural, magnetic, and electron-transport properties of a SGS material CoFeCrAl in the thin film geometry have been investigated. CoFeCrAl films were grown on atomically flat SiO2 substrates using magnetron sputtering. The Curie temperature was measured to be 550 K very close to the value reported for bulk CoFeCrAl. Electron-transport measurements on the oriented films revealed a negative temperature coefficient of resistivity, small anomalous Hall conductivity and linear field dependence of magnetoresistance, which are transport signatures of SGS. The effect of elemental compositions and structural ordering on the SGS properties of the CoFeCrAl films will be discussed. Research supported by NSF (Y. J.), DoE (B. B., D. J. S), ARO (T. A. G., S. R. V.), SDSU (P. K.), and NRI (Facilities).

  10. Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.

    PubMed

    James, Teena; Kalinin, Yevgeniy V; Chan, Chih-Chieh; Randhawa, Jatinder S; Gaevski, Mikhail; Gracias, David H

    2012-07-11

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP)-assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and cone-angles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations.

  11. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions

    NASA Astrophysics Data System (ADS)

    Qin, Ruifeng; Cao, Hongtao; Liang, Lingyan; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif; Liu, Caichi; Sun, Weizhong

    2016-04-01

    ZnSnN2 is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN2 films with a low electron concentration, in order to promote the applications of ZnSnN2 as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN2 films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN2 p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 1017 to 6.78 × 1017 cm-3 and from 0.37 to 2.07 cm2 V-1 s-1, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 103. The achievement of this ZnSnN2-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN2 material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  12. Nonlinear dynamics and plasma transport

    SciTech Connect

    Antonsen, T.M. Jr.; Drake, J.F.; Finn, J.M.; Guzdar, P.N.; Hassam, A.B.; Sageev, R.Z.

    1993-01-01

    This progress report details work done on a program in nonlinear dynamical aspects of plasma turbulence and transport funded by DOE since 1989. This program has been in cooperation with laboratories in theUSSR [now Russia and the Confederation of Independent States (CIS)]. The purpose of this program has been: To promote the utilization of recent pathbreaking developments in nonlinear science in plasma turbulence and transport. To promote cooperative scientific investigations between the US and CIS in the related areas of nonlinear science and plasma turbulence and transport. In the work reported in our progress report, we have studied simple models which are motivated by observation on actual fusion devices. The models focus on the important physical processes without incorporating the complexity of the geometry of real devices. This allows for a deeper analysis and understanding of the system both analytically and numerically.

  13. Nanophotonic Devices in Silicon for Nonlinear Optics

    DTIC Science & Technology

    2010-10-15

    Leuthold, W. Freude , J.-M. Brosi, R. Baets, P. Dumon, I. Biaggio, M. L. Scimeca, F. Diederich, B. Frank, and C. Koos, “Silicon Organic Hybrid Technology...2010. [24] L. Alloatti, D. Korn, D. Hillerkuss, T. Vallaitis, J. Li,R. Bonk, R. Palmer, T. Schellinger, C. Koos,W. Freude , J. Leuthold, A. Barklund, R...T. Michinobu, F. Diederich, W. Freude , and J. Leuthold, “All-optical high-speed signal processing with silicon–organic hybrid slot waveguides

  14. Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal.

    PubMed

    Stern, Alex; Efimkin, Dmitry K; Galitski, Victor; Fisk, Zachary; Xia, Jing

    2016-04-22

    Radio frequency tunable oscillators are vital electronic components for signal generation, characterization, and processing. They are often constructed with a resonant circuit and a "negative" resistor, such as a Gunn diode, involving complex structure and large footprints. Here we report that a piece of SmB_{6}, 100  μm in size, works as a current-controlled oscillator in the 30 MHz frequency range. SmB_{6} is a strongly correlated Kondo insulator that was recently found to have a robust surface state likely to be protected by the topology of its electronics structure. We exploit its nonlinear dynamics, and demonstrate large ac voltage outputs with frequencies from 20 Hz to 30 MHz by adjusting a small dc bias current. The behaviors of these oscillators agree well with a theoretical model describing the thermal and electronic dynamics of coupled surface and bulk states. With reduced crystal size we anticipate the device to work at higher frequencies, even in the THz regime. This type of oscillator might be realized in other materials with a metallic surface and a semiconducting bulk.

  15. Radio Frequency Tunable Oscillator Device Based on a SmB6 Microcrystal

    NASA Astrophysics Data System (ADS)

    Stern, Alex; Efimkin, Dmitry K.; Galitski, Victor; Fisk, Zachary; Xia, Jing

    2016-04-01

    Radio frequency tunable oscillators are vital electronic components for signal generation, characterization, and processing. They are often constructed with a resonant circuit and a "negative" resistor, such as a Gunn diode, involving complex structure and large footprints. Here we report that a piece of SmB6 , 100 μ m in size, works as a current-controlled oscillator in the 30 MHz frequency range. SmB6 is a strongly correlated Kondo insulator that was recently found to have a robust surface state likely to be protected by the topology of its electronics structure. We exploit its nonlinear dynamics, and demonstrate large ac voltage outputs with frequencies from 20 Hz to 30 MHz by adjusting a small dc bias current. The behaviors of these oscillators agree well with a theoretical model describing the thermal and electronic dynamics of coupled surface and bulk states. With reduced crystal size we anticipate the device to work at higher frequencies, even in the THz regime. This type of oscillator might be realized in other materials with a metallic surface and a semiconducting bulk.

  16. Transition of single-walled carbon nanotubes from metallic to semiconducting in field-effect transistors by hydrogen plasma treatment.

    PubMed

    Zheng, Gang; Li, Qunqing; Jiang, Kaili; Zhang, Xiaobo; Chen, Jia; Ren, Zheng; Fan, Shoushan

    2007-06-01

    We report hydrogen plasma treatment results on converting the metallic single-walled carbon nanotubes to semiconducting single-walled carbon nanotubes. We found that the as-grown single-walled carbon nanotubes (SWNTs) can be sorted as three groups which behave as metallic, as-metallic, and semiconducting SWNTs. These three groups have different changes under hydrogen plasma treatment and successive annealing process. The SWNTs can be easily hydrogenated in the hydrogen plasma environment and the as-metallic SWNTs can be transformed to semiconducting SWNTs. The successive annealing process can break the C-H bond, so the conversion is reversible.

  17. Magneto-optical absorption in semiconducting spherical quantum dots: Influence of the dot-size, confining potential, and magnetic field

    NASA Astrophysics Data System (ADS)

    Kushwaha, Manvir S.

    2014-12-01

    Semiconducting quantum dots - more fancifully dubbed artificial atoms - are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement - or the lack of any degree of freedom for the electrons (and/or holes) - in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines' random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level transitions are seen

  18. Magneto-optical absorption in semiconducting spherical quantum dots: Influence of the dot-size, confining potential, and magnetic field

    SciTech Connect

    Kushwaha, Manvir S.

    2014-12-15

    Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level

  19. Nonlinear waves: Dynamics and evolution

    NASA Astrophysics Data System (ADS)

    Gaponov-Grekhov, A. V.; Rabinovich, M. I.

    Papers on nonlinear waves are presented, covering topics such as the history of studies on nonlinear dynamics since Poincare, attractors, pattern formation and the dynamics of two-dimensional structures in nonequilibirum dissipative media, the onset of spatial chaos in one-dimensional systems, and self-organization phenomena in laser thermochemistry. Additional topics include criteria for the existence of moving structures in two-component reaction-diffusion systems, space-time structures in optoelectronic devices, stimulated scattering and surface structures, and distributed wave collapse in the nonlinear Schroedinger equation. Consideration is also given to dimensions and entropies in multidimensional systems, measurement methods for correlation dimensions, quantum localization and dynamic chaos, self-organization in bacterial cells and populations, nonlinear phenomena in condensed matter, and the origin and evolutionary dynamics of Uranian rings.

  20. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

    DOEpatents

    Abraham, Marvin M.; Chen, Yok; Kernohan, Robert H.

    1981-01-01

    This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

  1. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Harris, M. T.; George, Michael A.; McCarty, P.

    1999-01-01

    As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness

  2. Semiconducting properties of layered cadmium sulphide-based hybrid nanocomposites

    PubMed Central

    2011-01-01

    A series of hybrid cadmium salt/cationic surfactant layered nanocomposites containing different concentrations of cadmium sulphide was prepared by exchanging chloride by sulphide ions in the layered precursor CdXx(OH)y(CnTA)z in a solid phase/gas reaction, resulting in a series of layered species exhibiting stoichiometries corresponding to CdSvXx(OH)y(CnTA)z, constituted by two-dimensional CdCl2/CdS ultra-thin sheets sandwiched between two self-assembled surfactant layers. The electronic structure of CdS in the nanocomposite is similar to that of bulk, but showing the expected features of two-dimensional confinement of the semiconductor. The nanocomposite band gap is found to depend in a non-linear manner on both the length of the hydrocarbon chain of the surfactant and the concentration of the sulphide in the inorganic sheet. The products show photocatalytic activity at least similar and usually better than that of "bulk" CdS in a factor of two. PMID:21896162

  3. Semiconducting properties of layered cadmium sulphide-based hybrid nanocomposites

    NASA Astrophysics Data System (ADS)

    López-Cabaña, Zoraya; Marfa Sotomayor Torres, Clivia; González, Guillermo

    2011-09-01

    A series of hybrid cadmium salt/cationic surfactant layered nanocomposites containing different concentrations of cadmium sulphide was prepared by exchanging chloride by sulphide ions in the layered precursor CdX x (OH) y (CnTA) z in a solid phase/gas reaction, resulting in a series of layered species exhibiting stoichiometries corresponding to CdS v X x (OH) y (CnTA) z , constituted by two-dimensional CdCl2/CdS ultra-thin sheets sandwiched between two self-assembled surfactant layers. The electronic structure of CdS in the nanocomposite is similar to that of bulk, but showing the expected features of two-dimensional confinement of the semiconductor. The nanocomposite band gap is found to depend in a non-linear manner on both the length of the hydrocarbon chain of the surfactant and the concentration of the sulphide in the inorganic sheet. The products show photocatalytic activity at least similar and usually better than that of "bulk" CdS in a factor of two.

  4. Nonlinear Systems.

    ERIC Educational Resources Information Center

    Seider, Warren D.; Ungar, Lyle H.

    1987-01-01

    Describes a course in nonlinear mathematics courses offered at the University of Pennsylvania which provides an opportunity for students to examine the complex solution spaces that chemical engineers encounter. Topics include modeling many chemical processes, especially those involving reaction and diffusion, auto catalytic reactions, phase…

  5. Nonlinear resonance

    NASA Astrophysics Data System (ADS)

    Kevorkian, J.

    This report discusses research in the area of slowly varying nonlinear oscillatory systems. Some of the topics discussed are as follows: adiabatic invariants and transient resonance in very slowly varying Hamiltonian systems; sustained resonance in very slowly varying Hamiltonian systems; free-electron lasers with very slow wiggler taper; and bursting oscillators.

  6. Nonlinear Systems.

    ERIC Educational Resources Information Center

    Seider, Warren D.; Ungar, Lyle H.

    1987-01-01

    Describes a course in nonlinear mathematics courses offered at the University of Pennsylvania which provides an opportunity for students to examine the complex solution spaces that chemical engineers encounter. Topics include modeling many chemical processes, especially those involving reaction and diffusion, auto catalytic reactions, phase…

  7. Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

    PubMed

    Yang, Li; Zhang, Wenfeng; Li, Jie; Cheng, Shuai; Xie, Zijian; Chang, Haixin

    2017-02-28

    Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoTe2 offers tremendous opportunities in various device applications. However, most of the existing methods so far only address the small-area local phase change or the growth of certain kinds of phases of MoTe2 film by laser irradiation, mechanical strain, or procursor type. Obtaining facile, tunable, reversible, and continuous-phase transition and evolution between different phases in direct growth of large-area, few-layer MoTe2 still remains challenging. Here, we develop a facile method to achieve phase control and transition and report a highly tunable, tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition (CVD) growth of large-area, few-layer MoTe2. We found four different phase stages, including two different types of coexistence phases of both 2H and 1 T' phases, 100% 2H phase, and 100% 1T' phase, would emerge, relying on the adopted tellurization velocity. Importantly, the tellurization velocity should be extremely controlled to obtain 100% 2H phase MoTe2, while 100% 1T' phase requires a fast tellurization velocity. We further found that such metallic-semiconducting-metallic phase evolution took place with a homogeneous spatial distribution and differs from previous reports in which obvious phase separations are usually found during the phase transition. The resulting MoTe2 shows high quality with room-temperature mobility comparable with mechanically exfoliated materials. The results might impact large-scale phase engineering of TMDs and other 2D materials for Weyl semimetal topological physics and potential 2D semiconductor device applications.

  8. Surface Chemistry of Semiconducting Quantum Dots: Theoretical Perspectives.

    PubMed

    Kilina, Svetlana V; Tamukong, Patrick K; Kilin, Dmitri S

    2016-10-18

    Colloidal quantum dots (QDs) are near-ideal nanomaterials for energy conversion and lighting technologies. However, their photophysics exhibits supreme sensitivity to surface passivation and defects, of which control is problematic. The role of passivating ligands in photodynamics remains questionable and is a focus of ongoing research. The optically forbidden nature of surface-associated states makes direct measurements on them challenging. Therefore, computational modeling is imperative for insights into surface passivation and its impact on light-driven processes in QDs. This Account discusses challenges and recent progress in understanding surface effects on the photophysics of QDs addressed via quantum-chemical calculations. We overview different methods, including the effective mass approximation (EMA), time-dependent density functional theory (TDDFT), and multiconfiguration approaches, considering their strengths and weaknesses relevant to modeling of QDs with a complicated surface. We focus on CdSe, PbSe, and Si QDs, where calculations successfully explain experimental trends sensitive to surface defects, doping, and ligands. We show that the EMA accurately describes both linear and nonlinear optical properties of large-sized CdSe QDs (>2.5 nm), while TDDFT is required for smaller QDs where surface effects dominate. Both approaches confirm efficient two-photon absorption enabling applications of QDs as nonlinear optical materials. TDDFT also describes the effects of morphology on the optical response of QDs: the photophysics of stoichiometric, magic-sized XnYn (X = Cd, Pb; Y = S, Se) QDs is less sensitive to their passivation compared with nonstoichiometric Xn≠mYm QDs. In the latter, surface-driven optically inactive midgap states can be eliminated by anionic ligands, explaining the better emission of metal-enriched QDs compared with nonmetal-enriched QDs. Ideal passivation of magic-sized QDs by amines and phosphine oxides leaves lower-energy transitions

  9. Separation of Semiconducting Carbon Nanotubes for Flexible and Stretchable Electronics Using Polymer Removable Method.

    PubMed

    Lei, Ting; Pochorovski, Igor; Bao, Zhenan

    2017-04-18

    Electronics that are soft, conformal, and stretchable are highly desirable for wearable electronics, prosthetics, and robotics. Among the various available electronic materials, single walled carbon nanotubes (SWNTs) and their network have exhibited high mechanical flexibility and stretchability, along with comparable electrical performance to traditional rigid materials, e.g. polysilicon and metal oxides. Unfortunately, SWNTs produced en masse contain a mixture of semiconducting (s-) and metallic (m-) SWNTs, rendering them unsuitable for electronic applications. Moreover, the poor solubility of SWNTs requires the introduction of insulating surfactants to properly disperse them into individual tubes for device fabrication. Compared to other SWNT dispersion and separation methods, e.g., DNA wrapping, density gradient ultracentrifugation, and gel chromatography, polymer wrapping can selectively disperse s-SWNTs with high selectivity (>99.7%), high concentration (>0.1 mg/mL), and high yield (>20%). In addition, this method only requires simple sonication and centrifuge equipment with short processing time down to 1 h. Despite these advantages, the polymer wrapping method still faces two major issues: (i) The purified s-SWNTs usually retain a substantial amount of polymers on their surface even after thorough rinsing. The low conductivity of the residual polymers impedes the charge transport in SWNT networks. (ii) Conjugated polymers used for SWNT wrapping are expensive. Their prices ($100-1000/g) are comparable or even higher than those of SWNTs ($10-300/g). These utilized conjugated polymers represent a large portion of the overall separation cost. In this Account, we summarize recent progresses in polymer design for selective dispersion and separation of SWNTs. We focus particularly on removable and/or recyclable polymers that enable low-cost and scalable separation methods. First, different separation methods are compared to show the advantages of the polymer

  10. Empirical Equation Based Chirality (n, m) Assignment of Semiconducting Single Wall Carbon Nanotubes from Resonant Raman Scattering Data

    PubMed Central

    Arefin, Md Shamsul

    2012-01-01

    This work presents a technique for the chirality (n, m) assignment of semiconducting single wall carbon nanotubes by solving a set of empirical equations of the tight binding model parameters. The empirical equations of the nearest neighbor hopping parameters, relating the term (2n− m) with the first and second optical transition energies of the semiconducting single wall carbon nanotubes, are also proposed. They provide almost the same level of accuracy for lower and higher diameter nanotubes. An algorithm is presented to determine the chiral index (n, m) of any unknown semiconducting tube by solving these empirical equations using values of radial breathing mode frequency and the first or second optical transition energy from resonant Raman spectroscopy. In this paper, the chirality of 55 semiconducting nanotubes is assigned using the first and second optical transition energies. Unlike the existing methods of chirality assignment, this technique does not require graphical comparison or pattern recognition between existing experimental and theoretical Kataura plot.

  11. Broad-Band-Emissive Organic-Inorganic Hybrid Semiconducting Nanowires Based on an ABX3-Type Chain Compound.

    PubMed

    Wu, Zhenyue; Li, Lina; Ji, Chengmin; Lin, Guoming; Wang, Sasa; Shen, Yaoguo; Sun, Zhihua; Zhao, Sangen; Luo, Junhua

    2017-08-07

    Organic-inorganic hybrid lead halide (e.g., CH3NH3PbX3, where X = CI, Br, and I) nanowires (NWs) with remarkable electric and optical properties have recently garnered increasing attention, owing to their structural flexibility and tunability compared to inorganic semiconducting NWs. While most recently reported NWs are limited to methylammonium/formamidinium three-dimensional lead halide perovskites, it is urgent to develop new organic-inorganic hybrid semiconducting NWs. Here, broad-band-emissive single-crystal semiconductive NWs based on a new ABX3-type organic-inorganic chain hybrid, (2-methylpiperidine)lead tribromide, are reported. It is believed that this work will enrich the organic-inorganic hybrid semiconducting NWs and may provide potential applications for LED displaying.

  12. Dielectrophoretic Assembly of Semiconducting Carbon Nanotubes Separated and Enriched by Spin Column Chromatography and Its Application to Gas Sensing

    NASA Astrophysics Data System (ADS)

    Nakano, Michihiko; Fujioka, Masahiro; Mai, Kaori; Watanabe, Hideaki; Martin, Yul; Suehiro, Junya

    2012-04-01

    The present authors have previously demonstrated the electrokinetic fabrication of a single-walled carbon nanotube (SWCNT) gas sensor by employing dielectrophoresis. Because this method employs mass-produced SWCNTs, it can realize cheaper and more flexible SWCNT gas sensor fabrication than that based on the on-site synthesis of SWCNTs. In this study, a new protocol was proposed and tested for the separation and enrichment of semiconducting SWCNTs, aiming to improve the SWCNT gas sensor sensitivity. The protocol employed a spin column filled with size-exclusion dextran-based gel beads as well as two surfactants (sodium dodecyl sulfate and sodium deoxycholate), which had different affinities to metallic and semiconducting SWCNTs. The separation and enrichment of the semiconducting SWCNTs were confirmed by measuring their optical and electrical properties. The CNT gas sensor fabricated using enriched semiconducting SWCNTs was highly sensitive to nitrogen dioxide (NO2) gas, - more sensitive by 10 times than that fabricated using the pristine SWCNT mixture.

  13. Real-Time Implementation of Nonlinear Processing Functions.

    DTIC Science & Technology

    1981-08-01

    crystal devices and then to use them in a coherent optical data- processing apparatus using halftone masks custom designed at the University oi Southern...California. With the halftone mask technique, we have demonstrated logarithmic nonlinear transformation, allowing us to separate multiplicative images...improved.,_ This device allowed nonlinear functions to be implemented directly wit - out the need for specially made halftone masks. Besides

  14. Transformation of Ag nanowires into semiconducting AgFeS2 nanowires.

    PubMed

    Sciacca, Beniamino; Yalcin, Anil O; Garnett, Erik C

    2015-04-08

    We report on the synthesis of semiconducting AgFeS2 nanowires, obtained from the conversion of Ag nanowires. The study of the conversion process shows that the formation of Ag2S nanowires, as an intermediate step, precedes the conversion into AgFeS2 nanowires. The chemical properties of AgFeS2 nanowires were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy at intermediate steps of the conversion process and show that the temperature at which the reaction takes place is critical to obtaining nanowires as opposed to nanotubes. Optical measurements on nanowire ensembles confirm the semiconducting nature of AgFeS2, with a direct band gap of 0.88 eV.

  15. Photoelectric Property Modulation by Nanoconfinement in the Longitude Direction of Short Semiconducting Nanorods.

    PubMed

    Tang, Chaolong; Jiang, Chengming; Bi, Sheng; Song, Jinhui

    2016-05-04

    Photoelectric property change in half-dimensional (0.5D) semiconducting nanomaterials as a function of illumination light intensity and materials geometry has been systematically studied. Through two independent methods, conductive atomic force microscopy (C-AFM) direct current-voltage acquisition and scanning kelvin probe microscopy (SKPM) surface potential mapping, photoelectric property of 0.5D ZnO nanomaterial has been characterized with exceptional behaviors compared with bulk/micro/one-dimensional (1D) nanomaterial. A new model by considering surface effect, quantum effect, and illumination effect has been successfully built, which could more accurately predict the photoelectric characteristics of 0.5D semiconducting nanomaterials. The findings reported in this study could potentially impact three-dimensional (3D) photoelectronics.

  16. Method and apparatus for casting conductive and semi-conductive materials

    DOEpatents

    Ciszek, T.F.

    1984-08-13

    A method and apparatus is disclosed for casting conductive and semi-conductive materials. The apparatus includes a plurality of conductive members arranged to define a container-like area having a desired cross-sectional shape. A portion or all of the conductive or semi-conductive material which is to be cast is introduced into the container-like area. A means is provided for inducing the flow of an electrical current in each of the conductive members, which currents act collectively to induce a current flow in the material. The induced current flow through the conductive members is in a direction substantially opposite to the induced current flow in the material so that the material is repelled from the conductive members during the casting process.

  17. Dual Colorimetric and Fluorescent Authentication Based on Semiconducting Polymer Dots for Anticounterfeiting Applications.

    PubMed

    Tsai, Wei-Kai; Lai, Yung-Sheng; Tseng, Po-Jung; Liao, Chia-Hsien; Chan, Yang-Hsiang

    2017-09-13

    Semiconducting polymer dots (Pdots) have recently emerged as a novel type of ultrabright fluorescent probes that can be widely used in analytical sensing and material science. Here, we developed a dual visual reagent based on Pdots for anticounterfeiting applications. We first designed and synthesized two types of photoswitchable Pdots by incorporating photochromic dyes with multicolor semiconducting polymers to modulate their emission intensities and wavelengths. The resulting full-color Pdot assays showed that the colorimetric and fluorescent dual-readout abilities enabled the Pdots to serve as an anticounterfeiting reagent with low background interference. We also doped these Pdots into flexible substrates and prepared these Pdots as inks for pen handwriting as well as inkjet printing. We further applied this reagent in printing paper and checks for high-security anticounterfeiting purposes. We believe that this dual-readout method based on Pdots will create a new avenue for developing new generations of anticounterfeiting technologies.

  18. Scintillation properties of semiconducting 6LiInSe2 crystals to ionizing radiation

    NASA Astrophysics Data System (ADS)

    Wiggins, Brenden; Groza, Michael; Tupitsyn, Eugene; Lukosi, Eric; Stassun, Keivan; Burger, Arnold; Stowe, Ashley

    2015-11-01

    6LiInSe2 has gained attention recently as a semiconducting thermal neutron detector. As presented herein, the chalcogenide compound semiconductor also detects incident neutrons via scintillation, making 6LiInSe2 the only lithium containing semiconductor to respond to neutrons via both detection mechanisms. Both yellow and red crystals, which appear in the literature, were investigated. Only the yellow crystal responded favorably to ionizing radiation, similar to the semiconducting operation utilizing electrodes. The obtained light yield for yellow crystals is 4400 photons/MeV, referenced to Bi4Ge3O12 (BGO).The estimated thermal neutron light yield was 21,000 photons/thermal neutron. The two measured decay time components were found to be 31±1 ns (49%) and 143±9 ns (51%).This crystal provides efficient, robust detection of neutrons via scintillation with respectable light yield and rapid response, enabling its use for a broad array of neutron detection applications.

  19. Technique for Determining the Viscosity and Electrical Conductivity of Semiconducting Liquids

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C. H.; Lehoczky, S. L.; Feth, S.; Zhu, S.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    A novel apparatus for determining the viscosity and electrical conductivity of semiconducting liquids has been developed at NASA/MSFC. The apparatus is based on the transient torque technique and utilizes a 125 micrometer diameter quartz fiber as a torsion wire and a sensitive angular detector to measure the deflection angle of the crucible containing the liquid. A rotating flow is induced in the semiconducting melt by the application of a rotating magnetic field and measurement of the magnitude and transient behavior of the induced deflection angle allows the simultaneous determination of the viscosity and electrical conductivity of the melt. Measurements at room temperature and up to 900 C were made on high purity melts.

  20. Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics.

    PubMed

    Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; Shaw, Leo; McGuire, Allister F; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B-H; Bao, Zhenan

    2017-05-16

    Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m(2)) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

  1. Characterisation of nanohybrids of porphyrins with metallic and semiconducting carbon nanotubes by EPR and optical spectroscopy.

    PubMed

    Cambré, Sofie; Wenseleers, Wim; Culin, Jelena; Van Doorslaer, Sabine; Fonseca, Antonio; Nagy, Janos B; Goovaerts, Etienne

    2008-09-15

    Single-walled carbon nanotubes (SWCNTs) are noncovalently functionalised with octaethylporphyrins (OEPs) and the resulting nanohybrids are isolated from the free OEPs. Electron paramagnetic resonance (EPR) spectroscopy of cobalt(II)OEP, adsorbed on the nanotube walls by pi-pi-stacking, demonstrates that the CNTs act as electron acceptors. EPR is shown to be very effective in resolving the different interactions for metallic and semiconducting tubes. Moreover, molecular oxygen is shown to bind selectively to nanohybrids with semiconducting tubes. Water solubilisation of the porphyrin/CNT nanohybrids using bile salts, after applying a thorough washing procedure, yields solutions in which at least 99% of the porphyrins are interacting with the CNTs. Due to this purification, we observe, for the first time, the isolated absorption spectrum of the interacting porphyrins, which is strongly red-shifted compared to the free porphyrin absorption. In addition a quasi-complete quenching of the porphyrin fluorescence is also observed.

  2. Technique for Determining the Viscosity and Electrical Conductivity of Semiconducting Liquids

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C. H.; Lehoczky, S. L.; Feth, S.; Zhu, S.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    A novel apparatus for determining the viscosity and electrical conductivity of semiconducting liquids has been developed at NASA/MSFC. The apparatus is based on the transient torque technique and utilizes a 125 micrometer diameter quartz fiber as a torsion wire and a sensitive angular detector to measure the deflection angle of the crucible containing the liquid. A rotating flow is induced in the semiconducting melt by the application of a rotating magnetic field and measurement of the magnitude and transient behavior of the induced deflection angle allows the simultaneous determination of the viscosity and electrical conductivity of the melt. Measurements at room temperature and up to 900 C were made on high purity melts.

  3. Origin of weak ferroelectricity in semiconductive Sb2S3 crystal

    NASA Astrophysics Data System (ADS)

    Žigas, Leonardas; Audzijonis, Algirdas; Grigas, Jonas

    2017-02-01

    The paper presents the results of the investigations of electronic potential dependencies upon the normal co-ordinates of B1u mode in a large temperature range for the Sb2S3 crystal. The results revealed high anharmonicity of Sb and S atoms in this highly covalent semiconductive compound and B1u - mode polar distortion with temperature leading to appearance of weak ferroelectricity.

  4. Fabrication of bright and small size semiconducting polymer nanoparticles for cellular labelling and single particle tracking

    NASA Astrophysics Data System (ADS)

    Wei, Lin; Zhou, Peng; Yang, Qingxiu; Yang, Qiaoyu; Ma, Ming; Chen, Bo; Xiao, Lehui

    2014-09-01

    In this work, we demonstrate a convenient and robust strategy for efficient fabrication of high fluorescence quantum yield (QY, 49.8 +/- 3%) semiconducting polymer nanoparticles (SPNs), with size comparable with semiconductor quantum dots (Qdots). The SPNs were synthesized by co-precipitation of hydrophobic semiconducting polymer together with amphiphilic multidentate polymer. Comprehensive spectroscopic and microscopic characterizations showed that the SPNs possess superior photophysical performance, with excellent fluorescence brightness and reduced photoblinking in contrast with Qdots, as well as good photostability compared to a fluorescent protein of a similar size, phycoerythrin. More importantly, by conjugating membrane biomarkers onto the surface of SPNs, it was found that they were not only suitable for specific cellular labelling but also for single particle tracking because of the improved optical performance.In this work, we demonstrate a convenient and robust strategy for efficient fabrication of high fluorescence quantum yield (QY, 49.8 +/- 3%) semiconducting polymer nanoparticles (SPNs), with size comparable with semiconductor quantum dots (Qdots). The SPNs were synthesized by co-precipitation of hydrophobic semiconducting polymer together with amphiphilic multidentate polymer. Comprehensive spectroscopic and microscopic characterizations showed that the SPNs possess superior photophysical performance, with excellent fluorescence brightness and reduced photoblinking in contrast with Qdots, as well as good photostability compared to a fluorescent protein of a similar size, phycoerythrin. More importantly, by conjugating membrane biomarkers onto the surface of SPNs, it was found that they were not only suitable for specific cellular labelling but also for single particle tracking because of the improved optical performance. Electronic supplementary information (ESI) available: Experimental section and additional supporting results as noted in the text

  5. spin pumping occurred under nonlinear spin precession

    NASA Astrophysics Data System (ADS)

    Zhou, Hengan; Fan, Xiaolong; Ma, Li; Zhou, Shiming; Xue, Desheng

    Spin pumping occurs when a pure-spin current is injected into a normal metal thin layer by an adjacent ferromagnetic metal layer undergoing ferromagnetic resonance, which can be understood as the inverse effect of spin torque, and gives access to the physics of magnetization dynamics and damping. An interesting question is that whether spin pumping occurring under nonlinear spin dynamics would differ from linear case. It is known that nonlinear spin dynamics differ distinctly from linear response, a variety of amplitude dependent nonlinear effect would present. It has been found that for spin precession angle above a few degrees, nonlinear damping term would present and dominated the dynamic energy/spin-moment dissipation. Since spin pumping are closely related to the damping process, it is interesting to ask whether the nonlinear damping term could be involved in spin pumping process. We studied the spin pumping effect occurring under nonlinear spin precession. A device which is a Pt/YIG microstrip coupled with coplanar waveguide was used. High power excitation resulted in spin precession entering in a nonlinear regime. Foldover resonance lineshape and nonlinear damping have been observed. Based on those nonlinear effects, we determined the values of the precession cone angles, and the maximum cone angle can reach a values as high as 21.5 degrees. We found that even in nonlinear regime, spin pumping is still linear, which means the nonlinear damping and foldover would not affect spin pumping process.

  6. Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation

    NASA Astrophysics Data System (ADS)

    Reis, Wieland G.; Tomović, Željko; Weitz, R. Thomas; Krupke, Ralph; Mikhael, Jules

    2017-03-01

    The potential of single–walled carbon nanotubes (SWCNTs) to outperform silicon in electronic application was finally enabled through selective separation of semiconducting nanotubes from the as-synthesized statistical mix with polymeric dispersants. Such separation methods provide typically high semiconducting purity samples with narrow diameter distribution, i.e. almost single chiralities. But for a wide range of applications high purity mixtures of small and large diameters are sufficient or even required. Here we proof that weak field centrifugation is a diameter independent method for enrichment of semiconducting nanotubes. We show that the non-selective and strong adsorption of polyarylether dispersants on nanostructured carbon surfaces enables simple separation of diverse raw materials with different SWCNT diameter. In addition and for the first time, we demonstrate that increased temperature enables higher purity separation. Furthermore we show that the mode of action behind this electronic enrichment is strongly connected to both colloidal stability and protonation. By giving simple access to electronically sorted SWCNTs of any diameter, the wide dynamic range of weak field centrifugation can provide economical relevance to SWCNTs.

  7. Assembling semiconducting molecules by covalent attachment to a lamellar crystalline polymer substrate

    PubMed Central

    Machatschek, Rainhard; Ortmann, Patrick; Reiter, Renate; Mecking, Stefan

    2016-01-01

    Summary We have investigated the potential of polymers containing precisely spaced side-branches for thin film applications, particularly in the context of organic electronics. Upon crystallization, the side-branches were excluded from the crystalline core of a lamellar crystal. Thus, the surfaces of these crystals were covered by side-branches. By using carboxyl groups as side-branches, which allow for chemical reactions, we could functionalize the crystal with semiconducting molecules. Here, we compare properties of crystals differing in size: small nanocrystals and large single crystals. By assembling nanocrystals on a Langmuir trough, large areas could be covered by monolayers consisting of randomly arranged nanocrystals. Alternatively, we used a method based on local supersaturation to grow large area single crystals of the precisely side-branched polymer from solution. Attachment of the semiconducting molecules to the lamellar surface of large single crystals was possible, however, only after an appropriate annealing procedure. As a function of the duration of the grafting process, the morphology of the resulting layer of semiconducting molecules changed from patchy to compact. PMID:27335767

  8. Novel Green Luminescent and Phosphorescent Material: Semiconductive Nanoporous ZnMnO with Photon Confinement.

    PubMed

    Lee, Sejoon; Lee, Youngmin; Panin, Gennady N

    2017-06-21

    A novel green luminescent and phosphorescent material of semiconductive nanoporous ZnMnO was synthesized by the thermal nucleation of nanopores in the 20-period Zn0.93Mn0.07O/Zn0.65Mn0.35O multilayer structure. Nanoporous ZnMnO showed an n-type semiconducting property and exhibited an extremely strong green light emission in its luminescence and phosphorescence characteristics. This arises from the formation of the localized energy level (i.e., green emission band) within the energy band gap and the confinement of photons. The results suggest nanoporous ZnMnO to have a great potential for the new type of semiconducting green phosphors and semiconductor light-emitting diodes with lower thresholds, producing an efficient light emission. In-depth analyses on the structural, electrical, and optical properties are thoroughly examined, and the formation mechanism of nanoporous ZnMnO and the origin of the strong green light emission are discussed.

  9. Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation

    PubMed Central

    Reis, Wieland G.; Tomović, Željko; Weitz, R. Thomas; Krupke, Ralph; Mikhael, Jules

    2017-01-01

    The potential of single–walled carbon nanotubes (SWCNTs) to outperform silicon in electronic application was finally enabled through selective separation of semiconducting nanotubes from the as-synthesized statistical mix with polymeric dispersants. Such separation methods provide typically high semiconducting purity samples with narrow diameter distribution, i.e. almost single chiralities. But for a wide range of applications high purity mixtures of small and large diameters are sufficient or even required. Here we proof that weak field centrifugation is a diameter independent method for enrichment of semiconducting nanotubes. We show that the non-selective and strong adsorption of polyarylether dispersants on nanostructured carbon surfaces enables simple separation of diverse raw materials with different SWCNT diameter. In addition and for the first time, we demonstrate that increased temperature enables higher purity separation. Furthermore we show that the mode of action behind this electronic enrichment is strongly connected to both colloidal stability and protonation. By giving simple access to electronically sorted SWCNTs of any diameter, the wide dynamic range of weak field centrifugation can provide economical relevance to SWCNTs. PMID:28317942

  10. Semiconducting polymer nanoparticles as photoacoustic molecular imaging probes in living mice

    NASA Astrophysics Data System (ADS)

    Pu, Kanyi; Shuhendler, Adam J.; Jokerst, Jesse V.; Mei, Jianguo; Gambhir, Sanjiv S.; Bao, Zhenan; Rao, Jianghong

    2014-03-01

    Photoacoustic imaging holds great promise for the visualization of physiology and pathology at the molecular level with deep tissue penetration and fine spatial resolution. To fully utilize this potential, photoacoustic molecular imaging probes have to be developed. Here, we introduce near-infrared light absorbing semiconducting polymer nanoparticles as a new class of contrast agents for photoacoustic molecular imaging. These nanoparticles can produce a stronger signal than the commonly used single-walled carbon nanotubes and gold nanorods on a per mass basis, permitting whole-body lymph-node photoacoustic mapping in living mice at a low systemic injection mass. Furthermore, the semiconducting polymer nanoparticles possess high structural flexibility, narrow photoacoustic spectral profiles and strong resistance to photodegradation and oxidation, enabling the development of the first near-infrared ratiometric photoacoustic probe for in vivo real-time imaging of reactive oxygen species--vital chemical mediators of many diseases. These results demonstrate semiconducting polymer nanoparticles to be an ideal nanoplatform for developing photoacoustic molecular probes.

  11. Real function of semiconducting polymer in GaAs/polymer planar heterojunction solar cells.

    PubMed

    Yan, Liang; You, Wei

    2013-08-27

    We systematically investigated GaAs/polymer hybrid solar cells in a simple planar junction, aiming to fundamentally understand the function of semiconducting polymers in GaAs/polymer-based heterojunction solar cells. A library of semiconducting polymers with different band gaps and energy levels were evaluated in GaAs/polymer planar heterojunctions. The optimized thickness of the active polymer layer was discovered to be ultrathin (~10 nm). Further, the open-circuit voltage (Voc) of such GaAs/polymer planar heterojunctions was fixed around 0.6 V, regardless of the HOMO energy level of the polymer employed. On the basis of this evidence and others, we conclude that n-type GaAs/polymer planar heterojunctions are not type II heterojunctions as originally assumed. Instead, n-type GaAs forms a Schottky barrier with its corresponding anode, while the semiconducting polymer of appropriate energy levels can function as hole transport layer and/or electron blocking layer. Additionally, we discover that both GaAs surface passivation and thermal annealing can improve the performance of GaAs/polymer hybrid solar cells.

  12. Semiconducting polymer nanoparticles as photoacoustic molecular imaging probes in living mice.

    PubMed

    Pu, Kanyi; Shuhendler, Adam J; Jokerst, Jesse V; Mei, Jianguo; Gambhir, Sanjiv S; Bao, Zhenan; Rao, Jianghong

    2014-03-01

    Photoacoustic imaging holds great promise for the visualization of physiology and pathology at the molecular level with deep tissue penetration and fine spatial resolution. To fully utilize this potential, photoacoustic molecular imaging probes have to be developed. Here, we introduce near-infrared light absorbing semiconducting polymer nanoparticles as a new class of contrast agents for photoacoustic molecular imaging. These nanoparticles can produce a stronger signal than the commonly used single-walled carbon nanotubes and gold nanorods on a per mass basis, permitting whole-body lymph-node photoacoustic mapping in living mice at a low systemic injection mass. Furthermore, the semiconducting polymer nanoparticles possess high structural flexibility, narrow photoacoustic spectral profiles and strong resistance to photodegradation and oxidation, enabling the development of the first near-infrared ratiometric photoacoustic probe for in vivo real-time imaging of reactive oxygen species--vital chemical mediators of many diseases. These results demonstrate semiconducting polymer nanoparticles to be an ideal nanoplatform for developing photoacoustic molecular probes.

  13. Production of semiconducting gold-DNA nanowires by application of DC bias.

    PubMed

    Joshi, Rakesh K; West, Leigh; Kumar, Amrita; Joshi, Nidhi; Alwarappan, Subbiah; Kumar, Ashok

    2010-05-07

    There is considerable interest in using DNA nanowires or nanotubes in a wide variety of bioelectronic applications and microcircuitry. Various methods have been developed to construct DNA nanostructures. Here, we report a novel method to construct semiconducting DNA nanowires by applying a suitable DC bias to a gold plating solution containing double-stranded DNA. The self-assembled nanowires fabricated by this method contain attached gold nanoparticles. Further, we report that the dimensions of the nanowires can be easily manipulated by altering the applied DC bias. We also confirmed the semiconducting nature of the DNA nanowires by studying their resistance-temperature behavior from 25 to 65 degrees C in a microelectrode system. These studies describe a simple process by which gold-decorated, semiconducting DNA nanowires could be created and may lead to a breakthrough in the field of self-assembly of nanometer-scale circuits. The self-assembled structures do have some similarity with tube-like structures but in the present work we are using the term 'DNA nanowires' to define the structures.

  14. Synthesis modified structural and dielectric properties of semiconducting zinc ferrospinels

    NASA Astrophysics Data System (ADS)

    Kumari, N.; Kumar, V.; Singh, S. K.; Khasa, S.; Dahiya, M. S.

    2017-02-01

    The influence of preparation techniques on structural and dielectric properties of ZnCrxFe1-xO4 (x=0, 0.1 abbreviated as Z and ZC) ferrite nano-particles synthesized using chemical co-precipitation (CCP), sol-gel (SG) and solid state reaction (SS) techniques is discussed. XRD profiles are used to confirm the single phase spinel ferrite formation. TEM images indicate the change in size and shape of particles on changing either the composition or the synthesis methodology. The TEM micrograph of samples obtained through CCP shows uniform particle size formation compared to those obtained through SG and SS. Sample prepared through CCP possess porosity >70% making these materials suitable for sensing applications. The dielectric loss, dielectric constant and ac conductivity are analyzed as a function of frequency, temperature and composition using impedance spectroscopy. A universal dielectric behavior has been predicted through temperature and frequency variations of different parameters. Dielectric constant is found to possess highest value for sample synthesized through SG which marks the possibility of using the SG derived ferrospinels as microwave device components.

  15. Topological Crystalline Insulator in a New Bi Semiconducting Phase

    PubMed Central

    Munoz, F.; Vergniory, M. G.; Rauch, T.; Henk, J.; Chulkov, E. V.; Mertig, I.; Botti, S.; Marques, M. A. L.; Romero, A. H.

    2016-01-01

    Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = −2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation. PMID:26905601

  16. Two-dimensional exciton properties in monolayer semiconducting phosphorus allotropes.

    PubMed

    Villegas, Cesar E P; Rodin, A S; Carvalho, Alexandra; Rocha, A R

    2016-10-12

    Excitons play a key role in technological applications since they have a strong influence on determining the efficiency of photovoltaic devices. Recently, it has been shown that the allotropes of phosphorus possess an optical band gap that can be tuned over a wide range of values including the near-infrared and visible spectra, which would make them promising candidates for optoelectronic applications. In this work we carry out ab initio many-body perturbation theory calculations to study the excitonic effects on the optical properties of two-dimensional phosphorus allotropes: the case of blue and black monolayers. We elucidate the most relevant optical transitions, exciton binding energy spectrum as well as real-space exciton distribution, particularly focusing on the absorption spectrum dependence on the incident light polarization. In addition, based on our results, we use a set of effective hydrogenic models, in which the electron-hole Coulomb interaction is included to estimate exciton binding energies and radii. Our results show an excellent agreement between the many-body methodology and the effective models.

  17. Topological Crystalline Insulator in a New Bi Semiconducting Phase

    NASA Astrophysics Data System (ADS)

    Munoz, F.; Vergniory, M. G.; Rauch, T.; Henk, J.; Chulkov, E. V.; Mertig, I.; Botti, S.; Marques, M. A. L.; Romero, A. H.

    2016-02-01

    Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = -2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.

  18. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  19. Remote sensing of wireless devices

    NASA Astrophysics Data System (ADS)

    King-Smith, Deen; Martone, Anthony

    2010-04-01

    Remote detection and characterization of wireless devices in an environment is a topic of growing importance. Characterization of a wireless device is useful in many applications. An example of this is in the testing of FCC Part 15 devices. These devices must adhere to strict guidelines in regards to RF interference. Compliance can be verified by using forensic techniques to classify and characterize the returned signal. We present a framework for remote detection and forensic characterization of RF devices using specially designed probe signals. This framework can be applied to a broad range of devices and models. Probe signals, device models, feature selection, classifier design are described. For the device model we introduce a method for simulating a non-linearity in the RF system based on a known diode model. Experimental results are given to verify our approach.

  20. Quantum well nonlinear microcavities

    NASA Astrophysics Data System (ADS)

    Oudar, J. L.; Kuszelewicz, R.; Sfez, B.; Pellat, D.; Azoulay, R.

    We report on recent progress in reducing the power threshold of all-optical bistable quantum well vertical microcavities. Significant improvements are achieved through an increase of the cavity finesse, together with a reduction of the device active layer thickness. A critical intensity of 5 μW/μm 2 has been observed on a microcavity of finesse 250, with a nonlinear medium of only 18 GaAs quantum wells of 10 nm thickness. Further improvements of the Bragg mirror quality resulted in a finesse of 700 and a power-lifetime product of 15 fJ/μm 2. Microresonator pixellation allows to obtain 2-dimensional arrays. A thermally-induced alloy-mixing technique is described, which produced a 110 meV carrier confinement energy, together with a refractive index change of -.012, averaged over the 2.6 μm nonlinear medium thickness. The resulting electrical and optical confinement is shown to improve the nonlinear characteristics, by limiting lateral carrier diffusion and light diffraction.