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Sample records for nonlinear semiconducting devices

  1. Semiconducting compounds and devices incorporating same

    DOEpatents

    Marks, Tobin J.; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2016-01-19

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  2. Semiconducting compounds and devices incorporating same

    DOEpatents

    Marks, Tobin J; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2014-06-17

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  3. Bulk semiconducting scintillator device for radiation detection

    DOEpatents

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  4. Nonlinear Optical Properties of Semiconducting Polymers

    DTIC Science & Technology

    1990-10-26

    Materials Science and Engineering. Ed. Michael B. Bever (Pergamon Press, Oxford, 1986), p . 1399. 2 -Nonlinear Excitations and Nonlinear Phenomena in...M. Sinclair, A.J. Heeger, A. 0. Patil, S. Shi, S. Askad and F. Wudl, Linear and Nonlinear Optical Studies of Poly( p -phenylene- vinylene) Derivatives... P . Smith, ICSM 󈨜, Santa Fe, NM (June 1988) P . Smith, Organized ACS Symposium on Processing of Conducting Polymers, ACS Meeting, Dallas (April, 1989

  5. Semiconducting polymer single crystals and devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dong, Huanli

    2016-11-01

    Highly ordered organic semiconductors in solid state with optimal molecular packing are critical to their electrical performance. Single crystals with long-range molecular orders and nearly perfect molecular packing are the best candidates, which already have been verified to exhibit the highest performance whether based on inorganic or small organic materials. However, in comparison, preparing high quality polymer crystals remains a big challenge in polymer science because of the easy entanglements of the long and flexible polymer chains during self-assembly process, which also significantly limits the development of their crystalline polymeric electronic devices. Here we have carried out systematical investigations to prepare high quality semiconducting polymers and high performance semiconducting polymer crystal optoelectronic devices have been successfully fabricated. The semiconducting polymeric devices demonstrate significantly enhanced charge carreir transport compared to their thin films, and the highest carreir mobiltiy could be approcahing 30 cm2 V-1s-1, one of the highest mobiltiy values for polymer semiconductors.

  6. Semiconducting ferroelectric SbSI quantum dots in amorphous matrix: preparation and nonlinear optical properties

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yang, Ligong; Gu, Peifu

    2002-09-01

    Semiconducting ferroelectric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin films were successfully fabricated with the sol-gel process. Ferroelectric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow eneryg gap. The Bohr radius of the SbSI crystal was calculated larger than other semiconductors due to its large dielectric constant. If the crystal size is smaller than its Bohr radius and the microcrystallite are dispersed in a suitable matrix, a dramatic improvement of the nonlinear three-order nonlinearity will be achieved due to the quantum confinement effect. The SbSI quantum dot composites were proved to be good candidates for nonlinear and electro-optical devices. Glycidopropyltrimetroxysilane modified TiO2 was chosen as the matrix and SbSI was synthesized in situ by using SbI3, SC(NH2)2. The materials in thin film were heat-treated in different conditions and the size of the microcrystallite was characterized by the XRD. A value of 3.5pm/V of effective transverse electro-optical coefficient reff for the nano-composite containing 8 wt percent of antimony sulfide iodide was measured. The third-order nonlinear optical susceptibility of the SbSI quantum dot thin film was measured by degenerate four-wave mixing at 532nm using a frequency double Nd:YAG laser beams with a pulse width of around 10ns, the x(3) value of 3 μm sample was measured to be 6 × 10-11 esu.

  7. Organic Semiconducting Thin Films: Device Applications and Beyond

    NASA Astrophysics Data System (ADS)

    Stemer, Dominik

    Organic semiconductors show great promise for device applications, particularly as organic thin film transistors (OTFTs) and organic photovoltaics (OPVs), due to their potential for low cost, high volume fabrication when compared to traditional inorganic semiconductors. While the performance of organic devices generally lags behind the more established inorganic devices, significant growth in the field of organic semiconductors has led to rapid improvements. In this thesis, device operation and characterization of OTFT and OPV systems are explained, the dramatic effects of fabrication procedures on the charge transport performance of OTFTs are demonstrated, and the reproducibility issues inherent to OPVs are explored. The potential for self-healing behavior in organic semiconductors is also investigated.

  8. Exciton Dynamics and Many Body Interactions in Layered Semiconducting Materials Revealed with Non-linear Coherent Spectroscopy

    NASA Astrophysics Data System (ADS)

    Dey, Prasenjit

    Atomically thin, semiconducting transition metal dichalogenides (TMDs), a special class of layered semiconductors, that can be shaped as a perfect two dimensional material, have garnered a lot of attention owing to their fascinating electronic properties which are achievable at the extreme nanoscale. In contrast to graphene, the most celebrated two-dimensional (2D) material thus far; TMDs exhibit a direct band gap in the monolayer regime. The presence of a non-zero bandgap along with the broken inversion symmetry in the monolayer limit brands semiconducting TMDs as the perfect candidate for future optoelectronic and valleytronics-based device application. These remarkable discoveries demand exploration of different materials that possess similar properties alike TMDs. Recently, III-VI layered semiconducting materials (example: InSe, GaSe etc.) have also emerged as potential materials for optical device based applications as, similar to TMDs, they can be shaped into a perfect two-dimensional form as well as possess a sizable band gap in their nano-regime. The perfect 2D character in layered materials cause enhancement of strong Coulomb interaction. As a result, excitons, a coulomb bound quasiparticle made of electron-hole pair, dominate the optical properties near the bandgap. The basis of development for future optoelectronic-based devices requires accurate characterization of the essential properties of excitons. Two fundamental parameters that characterize the quantum dynamics of excitons are: a) the dephasing rate, gamma, which represents the coherence loss due to the interaction of the excitons with their environment (for example- phonons, impurities, other excitons, etc.) and b) excited state population decay rate arising from radiative and non-radiative relaxation processes. The dephasing rate is representative of the time scale over which excitons can be coherently manipulated, therefore accurately probing the source of exciton decoherence is crucial for

  9. Formation of single-walled carbon nanotube thin films enriched with semiconducting nanotubes and their application in photoelectrochemical devices.

    PubMed

    Wei, Li; Tezuka, Noriyasu; Umeyama, Tomokazu; Imahori, Hiroshi; Chen, Yuan

    2011-04-01

    Single-walled carbon nanotube (SWCNT) thin films, containing a high-density of semiconducting nanotubes, were obtained by a gel-centrifugation method. The agarose gel concentration and centrifugation force were optimized to achieve high semiconducting and metallic nanotube separation efficiency at 0.1 wt% agarose gel and 18,000g. The thickness of SWCNT films can be precisely controlled from 65 to 260 nm with adjustable transparency. These SWCNT films were applied in photoelectrochemical devices. Photocurrents generated by semiconducting SWCNT enriched films are 15-35% higher than those by unsorted SWCNT films. This is because of reducing exciton recombination channels as a result of the removal of metallic nanotubes. Thinner films generate higher photocurrents because charge carriers have less chances going in metallic nanotubes for recombination, before they can reach electrodes. Developing more scalable and selective methods for high purity semiconducting SWCNTs is important to further improve the photocurrent generation efficiency by using SWCNT-based photoelectrochemical devices.

  10. Solution-processable SWNT transistors: Toward high performance and full semiconducting device yield

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjing; Lee, Chun Wei; Zhao, Jianwen; Li, Lain-Jong

    2010-03-01

    The major hurdle to scale up SWNT network field-effect transistors (FETs) is the difficulty in obtaining high mobility and full semiconductor device yield due to the co-existence of metallic and semiconducting tubes in fabricated networks. We demonstrate that the radical initiator 1,1'-azobis(cyanocyclohexane) (ACN) allows for release of radicals which preferentially react with small and metallic SWNTs. By applying this reaction to CoMoCat SWNTs, metallic tubes are electrically suppressed and semiconducting thin-film transistors can be readily made with almost full semiconductor device yield. The effective mobility can be raised to ˜10 cm2/V.s with increasing the network thickness to ˜20 nm while keeping the on-off ratio higher than 10000. Moreover, top-gated devices with polymer-ionic liquid mixture as the dielectrics are demonstrated to be almost hysteresis-free and with low threshold voltage, promising applications in low-cost printable electronics.

  11. Strain compensation in a semiconducting device structure using an intentionally mismatched uniform buffer layer

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-12-01

    The extent of strain relaxation in semiconducting device heterostructures has important implications in the design of high electron mobility transistors, light-emitting diodes, and laser diodes, in which the residual strain affects the device characteristics. In this work, we develop the theoretical framework for understanding strain compensation in a semiconductor device layer using a uniform buffer layer which can be intentionally mismatched to the material above. Specifically, we determined the critical condition for complete strain compensation in the device layer by intentionally introducing a compositional mismatch at the device-buffer interface. We present minimum energy calculations and show that for a given device layer with fixed mismatch and layer thickness, the buffer layer may be designed with the appropriate combination of thickness and mismatch such that the device layer will have zero residual strain in equilibrium. Such a structure can be referred to as a completely strain-compensated design. In the more general case, there may be partial strain compensation, and we give a simple physics-based Gaussian-type function describing the residual strain in the device layer. We have applied this general framework to In x Ga1-x As/GaAs (001) heterostructures for the purpose of illustration, but the work is applicable to any diamond or zinc blende (001) heteroepitaxial material system.

  12. Linear and Nonlinear Rheology Combined with Dielectric Spectroscopy of Hybrid Polymer Nanocomposites for Semiconductive Applications

    PubMed Central

    Kádár, Roland; Abbasi, Mahdi; Figuli, Roxana; Rigdahl, Mikael; Wilhelm, Manfred

    2017-01-01

    The linear and nonlinear oscillatory shear, extensional and combined rheology-dielectric spectroscopy of hybrid polymer nanocomposites for semiconductive applications were investigated in this study. The main focus was the influence of processing conditions on percolated poly(ethylene-butyl acrylate) (EBA) nanocomposite hybrids containing graphite nanoplatelets (GnP) and carbon black (CB). The rheological response of the samples was interpreted in terms of dispersion properties, filler distortion from processing, filler percolation, as well as the filler orientation and distribution dynamics inside the matrix. Evidence of the influence of dispersion properties was found in linear viscoelastic dynamic frequency sweeps, while the percolation of the nanocomposites was detected in nonlinearities developed in dynamic strain sweeps. Using extensional rheology, hybrid samples with better dispersion properties lead to a more pronounced strain hardening behavior, while samples with a higher volume percentage of fillers caused a drastic reduction in strain hardening. The rheo-dielectric time-dependent response showed that in the case of nanocomposites containing only GnP, the orientation dynamics leads to non-conductive samples. However, in the case of hybrids, the orientation of the GnP could be offset by the dispersing of the CB to bridge the nanoplatelets. The results were interpreted in the framework of a dual PE-BA model, where the fillers would be concentrated mainly in the BA regions. Furthermore, better dispersed hybrids obtained using mixing screws at the expense of filler distortion via extrusion processing history were emphasized through the rheo-dielectric tests. PMID:28336857

  13. Linear and Nonlinear Rheology Combined with Dielectric Spectroscopy of Hybrid Polymer Nanocomposites for Semiconductive Applications.

    PubMed

    Kádár, Roland; Abbasi, Mahdi; Figuli, Roxana; Rigdahl, Mikael; Wilhelm, Manfred

    2017-01-24

    The linear and nonlinear oscillatory shear, extensional and combined rheology-dielectric spectroscopy of hybrid polymer nanocomposites for semiconductive applications were investigated in this study. The main focus was the influence of processing conditions on percolated poly(ethylene-butyl acrylate) (EBA) nanocomposite hybrids containing graphite nanoplatelets (GnP) and carbon black (CB). The rheological response of the samples was interpreted in terms of dispersion properties, filler distortion from processing, filler percolation, as well as the filler orientation and distribution dynamics inside the matrix. Evidence of the influence of dispersion properties was found in linear viscoelastic dynamic frequency sweeps, while the percolation of the nanocomposites was detected in nonlinearities developed in dynamic strain sweeps. Using extensional rheology, hybrid samples with better dispersion properties lead to a more pronounced strain hardening behavior, while samples with a higher volume percentage of fillers caused a drastic reduction in strain hardening. The rheo-dielectric time-dependent response showed that in the case of nanocomposites containing only GnP, the orientation dynamics leads to non-conductive samples. However, in the case of hybrids, the orientation of the GnP could be offset by the dispersing of the CB to bridge the nanoplatelets. The results were interpreted in the framework of a dual PE-BA model, where the fillers would be concentrated mainly in the BA regions. Furthermore, better dispersed hybrids obtained using mixing screws at the expense of filler distortion via extrusion processing history were emphasized through the rheo-dielectric tests.

  14. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices

    NASA Astrophysics Data System (ADS)

    Ma, Yuqiang; Liu, Bilu; Zhang, Anyi; Chen, Liang; Fathi, Mohammad; Shen, Chenfei; Abbas, Ahmad; Ge, Mingyuan; Mecklenburg, Matthew; Zhou, Chongwu; Usc Nanolab Team

    Two-dimensional (2D) semiconducting monolayer transition metal dichalcogenides (TMDCs) have stimulated lots of interest because they are direct bandgap materials that have reasonably good mobility values. However, contact between most metals and semiconducting TMDCs like 2H phase WSe2 is highly resistive, thus degrading the performance of field effect transistors (FETs) fabricated with WSe2 as active channel materials. We applied a phase engineering method to chemical vapor deposition (CVD) grown monolayer 2H-WSe2 and demonstrated semiconducting-to-metallic phase transition in atomically thin WSe2. We have also shown that metallic phase WSe2 can be converted back to semiconducting phase, demonstrating the reversibility of this phase transition. In addition, we fabricated FETs based on these CVD-grown WSe2 flakes with phase-engineered metallic 1T-WSe2 as contact regions and intact semiconducting 2H-WSe2 as active channel materials. The device performance is substantially improved with metallic phase source/drain electrodes, showing on/off current ratios of 107 and mobilities up to 66 cm2/Vs for monolayer WSe2. PI name: Chongwu Zhou.

  15. Advances in nonlinear optical materials and devices

    NASA Technical Reports Server (NTRS)

    Byer, Robert L.

    1991-01-01

    The recent progress in the application of nonlinear techniques to extend the frequency of laser sources has come from the joint progress in laser sources and in nonlinear materials. A brief summary of the progress in diode pumped solid state lasers is followed by an overview of progress in nonlinear frequency extension by harmonic generation and parametric processes. Improved nonlinear materials including bulk crystals, quasiphasematched interactions, guided wave devices, and quantum well intersubband studies are discussed with the idea of identifying areas of future progress in nonlinear materials and devices.

  16. Potentiality of semiconducting diamond as the base material of millimeter-wave and terahertz IMPATT devices

    NASA Astrophysics Data System (ADS)

    Acharyya, Aritra; Banerjee, Suranjana; Banerjee, J. P.

    2014-03-01

    An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region (DDR) impact avalanche transit time (IMPATT) devices operating at both millimetre-wave (mm-wave) and terahertz (THz) frequencies. A rigorous large-signal (L-S) simulation based on the non-sinusoidal voltage excitation (NSVE) model developed earlier by the authors is used in this study. At first, a simulation study based on avalanche response time reveals that the upper cut-off frequency for DDR diamond IMPATTs is 1.5 THz, while the same for conventional DDR Si IMPATTs is much smaller, i.e. 0.5 THz. The L-S simulation results show that the DDR diamond IMPATT device delivers a peak RF power of 7.79 W with an 18.17% conversion efficiency at 94 GHz; while at 1.5 THz, the peak power output and conversion efficiency decrease to 6.19 mW and 8.17% respectively, taking 50% voltage modulation. A comparative study of DDR IMPATTs based on diamond and Si shows that the former excels over the later as regards high frequency and high power performance at both mm-wave and THz frequency bands. The effect of band to band tunneling on the L-S properties of DDR diamond and Si IMPATTs has also been studied at different mm-wave and THz frequencies.

  17. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    PubMed

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

  18. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

    NASA Astrophysics Data System (ADS)

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-01

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (+/-2 V) and subthreshold swing (SS) (122-161 mV dec-1), high effective mobility (up to 17.6-37.7 cm2 V-1 s-1) and high on/off ratio (104-107). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge

  19. Vacuum filtration based formation of liquid crystal films of semiconducting carbon nanotubes and high performance transistor devices

    NASA Astrophysics Data System (ADS)

    King, Benjamin; Panchapakesan, Balaji

    2014-05-01

    In this paper, we report ultra-thin liquid crystal films of semiconducting carbon nanotubes using a simple vacuum filtration process. Vacuum filtration of nanotubes in aqueous surfactant solution formed nematic domains on the filter membrane surface and exhibited local ordering. A 2D fast Fourier transform was used to calculate the order parameters from scanning electron microscopy images. The order parameter was observed to be sensitive to the filtration time demonstrating different regions of transformation namely nucleation of nematic domains, nanotube accumulation and large domain growth.Transmittance versus sheet resistance measurements of such films resulted in optical to dc conductivity of σ opt/σ dc = 9.01 indicative of purely semiconducting nanotube liquid crystal network.Thin films of nanotube liquid crystals with order parameters ranging from S = 0.1-0.5 were patterned into conducting channels of transistor devices which showed high I on/I off ratios from 10-19 800 and electron mobility values μ e = 0.3-78.8 cm2 (V-s)-1, hole mobility values μ h = 0.4-287 cm2 (V-s)-1. High I on/I off ratios were observed at low order parameters and film mass. A Schottky barrier transistor model is consistent with the observed transistor characteristics. Electron and hole mobilities were seen to increase with order parameters and carbon nanotube mass fractions. A fundamental tradeoff between decreasing on/off ratio and increasing mobility with increasing nanotube film mass and order parameter is therefore concluded. Increase in order parameters of nanotubes liquid crystals improved the electronic transport properties as witnessed by the increase in σ dc/σ opt values on macroscopic films and high mobilities in microscopic transistors. Liquid crystal networks of semiconducting nanotubes as demonstrated here are simple to fabricate, transparent, scalable and could find wide ranging device applications.

  20. Non-Linear Electrohydrodynamics in Microfluidic Devices

    PubMed Central

    Zeng, Jun

    2011-01-01

    Since the inception of microfluidics, the electric force has been exploited as one of the leading mechanisms for driving and controlling the movement of the operating fluid and the charged suspensions. Electric force has an intrinsic advantage in miniaturized devices. Because the electrodes are placed over a small distance, from sub-millimeter to a few microns, a very high electric field is easy to obtain. The electric force can be highly localized as its strength rapidly decays away from the peak. This makes the electric force an ideal candidate for precise spatial control. The geometry and placement of the electrodes can be used to design electric fields of varying distributions, which can be readily realized by Micro-Electro-Mechanical Systems (MEMS) fabrication methods. In this paper, we examine several electrically driven liquid handling operations. The emphasis is given to non-linear electrohydrodynamic effects. We discuss the theoretical treatment and related numerical methods. Modeling and simulations are used to unveil the associated electrohydrodynamic phenomena. The modeling based investigation is interwoven with examples of microfluidic devices to illustrate the applications. PMID:21673912

  1. Final Report for DE-FG36-08GO18007 "All-Inorganic, Efficient Photovoltaic Solid State Devices Utilizing Semiconducting Colloidal Nanocrystal Quantum Dots"

    SciTech Connect

    Vladimir Bulovic and Moungi Bawendi

    2011-09-30

    We demonstrated robust colloidal quantum dot (QD) photovoltaics with high internal quantum efficiencies. In our structures, device durability is derived from use of all-inorganic atmospherically-stable semiconducting metal-oxide films together with QD photoreceptors. We have shown that both QD and metal-oxide semiconducting films and contacts are amenable to room temperature processing under minimal vacuum conditions, enabling large area processing of PV structures of high internal efficiency. We generated the state of the art devices with power conversion efficiency of more than 4%, and have shown that efficiencies as high as 9% are achievable in the near-term, and as high as 17% in the long-term.

  2. Probing the degradation and homogeneity of embedded perovskite semiconducting layers in photovoltaic devices by Raman spectroscopy.

    PubMed

    Hooper, K E A; Lee, H K H; Newman, M J; Meroni, S; Baker, J; Watson, T M; Tsoi, W C

    2017-02-15

    The key challenges for perovskite solar cells include their poor stability and film homogeneity. Studying the degradation and homogeneity of perovskite layers within device structures can be challenging but critical to the understanding of stability and effect of processing in real life conditions. We show that Raman spectroscopy (RS) is a unique and powerful method (simple and fast) to probe the degradation of the perovskite film within the device structure and image perovskite formation. We demonstrate that RS can be used to directly probe chemical (PbI2) and physical (dihydrated phase) degradation of a perovskite film, and estimate the relative amount of the degradation species formed, mapping its distribution with ∼1 μm spatial resolution. This has been applied to mapping a large area perovskite module to characterise the efficacy of PbI2 to perovskite conversion. We also use RS to study the degradation species and kinetics under diverse accelerated degradation conditions (temperature and humidity) in situ. These capabilities are difficult to achieve with other methods, presenting RS as an important tool to gain understanding of the degradation and effect of processing on perovskite-based photovoltaic devices.

  3. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    DTIC Science & Technology

    2007-03-01

    nanocrystals……………………………………… 7 ZnSe and ZnS nanowires and nanorods, ZnO…………..……………………………… 9 Conjugated polymers in nanostructured composite materials...treatments and nanocrystal size. Compared to nanocrystalline Group II-VI compounds CdSe and CdS, Group III-V semiconductors, such as InP, GaP, InN, or...molecular level are being used to facilitate their integration into host matrices and devices. ZnSe and ZnS nanowires and nanorods, ZnO

  4. PREFACE: Semiconducting oxides Semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

  5. Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock.

    PubMed

    Che, Yuchi; Wang, Chuan; Liu, Jia; Liu, Bilu; Lin, Xue; Parker, Jason; Beasley, Cara; Wong, H-S Philip; Zhou, Chongwu

    2012-08-28

    The development of guided chemical vapor deposition (CVD) growth of single-walled carbon nanotubes provides a great platform for wafer-scale integration of aligned nanotubes into circuits and functional electronic systems. However, the coexistence of metallic and semiconducting nanotubes is still a major obstacle for the development of carbon-nanotube-based nanoelectronics. To address this problem, we have developed a method to obtain predominantly semiconducting nanotubes from direct CVD growth. By using isopropyl alcohol (IPA) as the carbon feedstock, a semiconducting nanotube purity of above 90% is achieved, which is unambiguously confirmed by both electrical and micro-Raman measurements. Mass spectrometric study was performed to elucidate the underlying chemical mechanism. Furthermore, high performance thin-film transistors with an on/off ratio above 10(4) and mobility up to 116 cm(2)/(V·s) have been achieved using the IPA-synthesized nanotube networks grown on silicon substrate. The method reported in this contribution is easy to operate and the results are highly reproducible. Therefore, such semiconducting predominated single-walled carbon nanotubes could serve as an important building block for future practical and scalable carbon nanotube electronics.

  6. Nonlinear Characterization of Half and Full Wavelength Power Ultrasonic Devices

    NASA Astrophysics Data System (ADS)

    Mathieson, Andrew; Cerisola, Niccolò; Cardoni, Andrea

    It is well known that power ultrasonic devices whilst driven under elevated excitation levels exhibit nonlinear behaviors. If no attempt is made to understand and subsequently control these behaviors, these devices can exhibit poor performance or even suffer premature failure. This paper presents an experimental method for the dynamic characterization of a commercial ultrasonic transducer for bone cutting applications (Piezosurgery® Device) operated together with a variety of rod horns that are tuned to operate in a longitudinal mode of vibration. Near resonance responses, excited via a burst sine sweep method were used to identify nonlinear responses exhibited by the devices, while experimental modal analysis was performed to identify the modal parameters of the longitudinal modes of vibration of the assemblies between 0-80 kHz. This study tries to provide an understanding of the effects that geometry and material choices may have on the nonlinear behavior of a tuned device.

  7. Nonlinear Thermal Effects in Ballistic Electron Devices

    DTIC Science & Technology

    2013-03-01

    characterization of the device. In other words, we now understand this system sufficiently well that we can predict its response to a thermal bias from...direction of the heat backflow, could have significantly enhanced performance. To date, thermal rectification has been demonstrated at some heterostructure ...gas (2DEG) devices embedded in InGaAs/InP heterostructure wafers. These heterostructures are grown on the surface of InP wafers at Lund University

  8. Optimization of the bulk heterojunction composition for enhanced photovoltaic properties: correlation between the molecular weight of the semiconducting polymer and device performance.

    PubMed

    Nicolet, Célia; Deribew, Dargie; Renaud, Cedric; Fleury, Guillaume; Brochon, Cyril; Cloutet, Eric; Vignau, Laurence; Wantz, Guillaume; Cramail, Henri; Geoghegan, Mark; Hadziioannou, Georges

    2011-11-10

    Herein we propose an approach toward the optimization of the photovoltaic performance of bulk heterojunctions by tuning the composition of the active layer with respect to the molecular weight of the semiconducting polymer. We used a poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) blend as a typical system and varied the molecular weight of the P3HT semiconducting polymer in order to determine its influence on the bulk heterojunction morphology as well as on the optoelectronic characteristics of the device. We have systematically mapped out the phase diagram for different molecular weight P3HTs blended with PCBM and observed the presence of a eutectic composition, which shifts to higher content of P3HT for lower molecular weight P3HTs. This shift inherent to the P3HT molecular weight is also apparent in the photovoltaic performance as the eutectic composition corresponds to the best of the photovoltaic properties. The P3HT molecular weight dependence of the eutectic composition is due to the molecular weight dependence of the P3HT crystallization behavior, which leads to dramatic morphological changes of the bulk heterojunction.

  9. Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

    PubMed Central

    Zhang, Wen-Ming; Meng, Guang; Chen, Di

    2007-01-01

    Electrostatic micro-electro-mechanical system (MEMS) is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

  10. Semiconducting polymers: the Third Generation.

    PubMed

    Heeger, Alan J

    2010-07-01

    There has been remarkable progress in the science and technology of semiconducting polymers during the past decade. The field has evolved from the early work on polyacetylene (the First Generation material) to a proper focus on soluble and processible polymers and co-polymers. The soluble poly(alkylthiophenes) and the soluble PPVs are perhaps the most important examples of the Second Generation of semiconducting polymers. Third Generation semiconducting polymers have more complex molecular structures with more atoms in the repeat unit. Important examples include the highly ordered and crystalline PDTTT and the ever-growing class of donor-acceptor co-polymers that has emerged in the past few years. Examples of the latter include the bithiophene-acceptor co-polymers pioneered by Konarka and the polycarbazole-acceptor co-polymers pioneered by Leclerc and colleagues. In this tutorial review, I will summarize progress in the basic physics, the materials science, the device science and the device performance with emphasis on the following recent studies of Third Generation semiconducting polymers: stable semiconducting polymers; self-assembly of bulk heterojunction (BHJ) materials by spontaneous phase separation; bulk heterojunction solar cells with internal quantum efficiency approaching 100%; high detectivity photodetectors fabricated from BHJ materials.

  11. An Ultrasonic Caliper Device for Measuring Acoustic Nonlinearity

    NASA Astrophysics Data System (ADS)

    Hunter, Christopher; Sapozhnikov, Oleg A.; Maxwell, Adam D.; Khokhlova, Vera A.; Wang, Yak-Nam; MacConaghy, Brian; Kreider, Wayne

    In medical and industrial ultrasound, it is often necessary to measure the acoustic properties of a material. A specific medical application requires measurements of sound speed, attenuation, and nonlinearity to characterize livers being evaluated for transplantation. For this application, a transmission-mode caliper device is proposed in which both transmit and receive transducers are directly coupled to a test sample, the propagation distance is measured with an indicator gage, and receive waveforms are recorded for analysis. In this configuration, accurate measurements of nonlinearity present particular challenges: diffraction effects can be considerable while nonlinear distortions over short distances typically remain small. To enable simple estimates of the nonlinearity coeffcient from a quasi-linear approximation to the lossless Burgers' equation, the calipers utilize a large transmitter and plane waves are measured at distances of 15-50 mm. Waves at 667 kHz and pressures between 0.1 and 1 MPa were generated and measured in water at different distances; the nonlinearity coeffcient of water was estimated from these measurements with a variability of approximately 10%. Ongoing efforts seek to test caliper performance in other media and improve accuracy via additional transducer calibrations.

  12. Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

    PubMed

    Banerjee, Arghya; Chattopadhyay, Kalyan K

    2008-01-01

    Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices.

  13. Non-linear optical crystal vibration sensing device

    DOEpatents

    Kalibjian, R.

    1994-08-09

    A non-linear optical crystal vibration sensing device including a photorefractive crystal and a laser is disclosed. The laser produces a coherent light beam which is split by a beam splitter into a first laser beam and a second laser beam. After passing through the crystal the first laser beam is counter-propagated back upon itself by a retro-mirror, creating a third laser beam. The laser beams are modulated, due to the mixing effect within the crystal by vibration of the crystal. In the third laser beam, modulation is stable and such modulation is converted by a photodetector into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal. 3 figs.

  14. Non-linear optical crystal vibration sensing device

    DOEpatents

    Kalibjian, Ralph

    1994-01-11

    A non-linear optical crystal vibration sensing device (10) including a photorefractive crystal (26) and a laser (12). The laser (12 ) produces a coherent light beam (14) which is split by a beam splitter (18) into a first laser beam (20) and a second laser beam (22). After passing through the crystal (26) the first laser beam (20) is counter-propagated back upon itself by a retro-mirror (32), creating a third laser beam (30). The laser beams (20, 22, 30) are modulated, due to the mixing effect within the crystal (26) by vibration of the crystal (30). In the third laser beam (30), modulation is stable and such modulation is converted by a photodetector (34) into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal (26).

  15. Nonlinear parametric amplification in a triport nanoelectromechanical device

    NASA Astrophysics Data System (ADS)

    Collin, E.; Moutonet, T.; Heron, J.-S.; Bourgeois, O.; Bunkov, Yu. M.; Godfrin, H.

    2011-08-01

    We report on measurements performed at low temperatures on a nanoelectromechanical system (NEMS) under (capacitive) parametric pumping. The excitations and detection schemes are purely electrical and, in the present experiment, enable the straightforward measurement of forces down to about a femtonewton, for displacements of an angström, using standard room-temperature electronics. We demonstrate that a small (linear) force applied on the device can be amplified up to more than a 100 times, while the system is truly moving. We explore the dynamics up to about 50-nm deflections for cantilevers about 200 nm thick and 3 μm long, oscillating at a frequency of 7 MHz. We present a generic modeling of nonlinear parametric amplification and give analytic theoretical solutions enabling the fit of experimental results. We finally discuss the practical limits of the technique, with a particular application: the measurement of anelastic damping in the metallic coating of the device, with an exceptional resolution of about 0.5%.

  16. Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro-Optic Devices

    DTIC Science & Technology

    1992-01-07

    COVERED 4. TITLE AND SUBTITLE Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro - Optic Devices 5a. CONTRACT NUMBER 5b. GRANT...generators, computational devices and the like. 15. SUBJECT TERMS optical devices, electro - optical devices, optical signal processing...THEREOF IN OPTICAL AND ELECTRO - OPTIC DEVICES [75] Inventors: Le*lie H. Sperling, Bethlehem; Clarence J. Murphy, Stroudsburg; Warren A. Rosen

  17. Surface physics of semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Amato, Michele; Rurali, Riccardo

    2016-02-01

    Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

  18. Growth of semiconducting graphene on palladium.

    PubMed

    Kwon, Soon-Yong; Ciobanu, Cristian V; Petrova, Vania; Shenoy, Vivek B; Bareño, Javier; Gambin, Vincent; Petrov, Ivan; Kodambaka, Suneel

    2009-12-01

    We report in situ scanning tunneling microscopy studies of graphene growth on Pd(111) during ethylene deposition at temperatures between 723 and 1023 K. We observe the formation of monolayer graphene islands, 200-2000 A in size, bounded by Pd surface steps. Surprisingly, the topographic image contrast from graphene islands reverses with tunneling bias, suggesting a semiconducting behavior. Scanning tunneling spectroscopy measurements confirm that the graphene islands are semiconducting, with a band gap of 0.3 +/- 0.1 eV. On the basis of density functional theory calculations, we suggest that the opening of a band gap is due to the strong interaction between graphene and the Pd substrate. Our findings point to the possibility of preparing semiconducting graphene layers for future carbon-based nanoelectronic devices via direct deposition onto strongly interacting substrates.

  19. An experimental nonlinear low dynamic stiffness device for shock isolation

    NASA Astrophysics Data System (ADS)

    Francisco Ledezma-Ramirez, Diego; Ferguson, Neil S.; Brennan, Michael J.; Tang, Bin

    2015-07-01

    The problem of shock generated vibration is very common in practice and difficult to isolate due to the high levels of excitation involved and its transient nature. If not properly isolated it could lead to large transmitted forces and displacements. Typically, classical shock isolation relies on the use of passive stiffness elements to absorb energy by deformation and some damping mechanism to dissipate residual vibration. The approach of using nonlinear stiffness elements is explored in this paper, focusing in providing an isolation system with low dynamic stiffness. The possibilities of using such a configuration for a shock mount are studied experimentally following previous theoretical models. The model studied considers electromagnets and permanent magnets in order to obtain nonlinear stiffness forces using different voltage configurations. It is found that the stiffness nonlinearities could be advantageous in improving shock isolation in terms of absolute displacement and acceleration response when compared with linear elastic elements.

  20. Enhanced Nonlinear Optical Devices Using Artificial Slow-Light Structures

    DTIC Science & Technology

    2010-08-19

    nature is our study of the limitations on the performance of slow light waveguides, both in the linear and nonlinear regimes. This work is based upon...interaction, and others (e.g. resonant-enhanced Mach-Zehnder interferometers, or REMZI) do not. We have also performed studies in the linear regime...optical filter configurations, primarily in terms of their linear response. One of the limitations of this approach is that designs cannot always be

  1. Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    NASA Technical Reports Server (NTRS)

    Wang, Zhong L. (Inventor); Wang, Xudong (Inventor); Song, Jinhui (Inventor); Zhou, Jun (Inventor); He, Jr-Hau (Inventor)

    2011-01-01

    A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.

  2. Electron transporting semiconducting polymers in organic electronics.

    PubMed

    Zhao, Xingang; Zhan, Xiaowei

    2011-07-01

    Significant progress has been achieved in the preparation of semiconducting polymers over the past two decades, and successful commercial devices based on them are slowly beginning to enter the market. However, most of the conjugated polymers are hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or n-type, materials that have lagged behind their p-type counterparts. Organic electron transporting materials are essential for the fabrication of organic p-n junctions, organic photovoltaic cells (OPVs), n-channel organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs) and complementary logic circuits. In this critical review we focus upon recent developments in several classes of electron transporting semiconducting polymers used in OLEDs, OFETs and OPVs, and survey and analyze what is currently known concerning electron transporting semiconductor architecture, electronic structure, and device performance relationships (87 references).

  3. High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)

    NASA Technical Reports Server (NTRS)

    Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

    2001-01-01

    Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

  4. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices

    NASA Technical Reports Server (NTRS)

    Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

    1999-01-01

    Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

  5. Analytical model for nonlinear piezoelectric energy harvesting devices

    NASA Astrophysics Data System (ADS)

    Neiss, S.; Goldschmidtboeing, F.; Kroener, M.; Woias, P.

    2014-10-01

    In this work we propose analytical expressions for the jump-up and jump-down point of a nonlinear piezoelectric energy harvester. In addition, analytical expressions for the maximum power output at optimal resistive load and the 3 dB-bandwidth are derived. So far, only numerical models have been used to describe the physics of a piezoelectric energy harvester. However, this approach is not suitable to quickly evaluate different geometrical designs or piezoelectric materials in the harvester design process. In addition, the analytical expressions could be used to predict the jump-frequencies of a harvester during operation. In combination with a tuning mechanism, this would allow the design of an efficient control algorithm to ensure that the harvester is always working on the oscillator's high energy attractor.

  6. Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices.

    PubMed

    Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

    2015-04-08

    Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices.

  7. Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices

    PubMed Central

    Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

    2015-01-01

    Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices. PMID:27547081

  8. First International Conference on Organic Nonlinear Optics. Section B: Nonlinear Optics, Principles, Materials, Phenomena, and Devices.

    DTIC Science & Technology

    1994-01-01

    1461, 1466.4 and 1489 cm for the C=C- wavelength [nto] 1000 800 600 500 400 1.0- "-0.8 06- o, 064 C 0 0.4 o 0.2- PPVS Lutt 0- Z-N 10000 15000 20000...well as in biological systems (e.g., light harvesting antenna). In addition the nonlinear optical response (NLO) of coherent extended states has in

  9. Growth of bulk single crystals of organic materials for nonlinear optical devices - An overview

    NASA Technical Reports Server (NTRS)

    Penn, Benjamin G.; Cardelino, Beatriz H.; Moore, Craig E.; Shields, Angela W.; Frazier, D. O.

    1991-01-01

    Highly perfect single crystals of nonlinear optical organic materials are required for use in optical devices. An overview of the bulk crystal growth of these materials by melt, vapor, and solution processes is presented. Additionally, methods that may be used to purify starting materials, detect impurities at low levels, screen materials for crystal growth, and process grown crystals are discussed.

  10. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  11. Non-linear control of the ''clam'' wave energy device. Final report

    SciTech Connect

    Not Available

    1983-09-01

    A promising wave energy device being currently investigated is the ''clam'' device. The clam extracts energy by pumping air through a specially designed (Wells) turbine. Although operation of the Wells turbine does not require a rectified air flow, some additional control will be necessary to optimize the phase of the clam motion for good efficiencies. An examination of the equation of motion in the time domain suggests the possibility of non-linear phase control by mechanical, power take-off, or pneumatic latching. Latching can be shown to increase the efficiency of the device in the longer wavelengths of the wave spectrum, i.e. those of high incident wave power.

  12. Semiconducting allotrope of graphene.

    PubMed

    Nisar, Jawad; Jiang, Xue; Pathak, Biswarup; Zhao, Jijun; Kang, Tae Won; Ahuja, Rajeev

    2012-09-28

    From first-principles calculations, we predict a planar stable graphene allotrope composed of a periodic array of tetragonal and octagonal (4, 8) carbon rings. The stability of this sheet is predicted from the room-temperature molecular dynamics study and the electronic structure is studied using state-of-the-art calculations such as the hybrid density functional and the GW approach. Moreover, the mechanical properties of (4, 8) carbon sheet are evaluated from the Young's modulus and intrinsic strength calculations. We find this is a stable planar semiconducting carbon sheet with a bandgap between 0.43 and 1.01 eV and whose mechanical properties are as good as graphene's.

  13. Modified hyperspheres algorithm to trace homotopy curves of nonlinear circuits composed by piecewise linear modelled devices.

    PubMed

    Vazquez-Leal, H; Jimenez-Fernandez, V M; Benhammouda, B; Filobello-Nino, U; Sarmiento-Reyes, A; Ramirez-Pinero, A; Marin-Hernandez, A; Huerta-Chua, J

    2014-01-01

    We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation.

  14. Modified Hyperspheres Algorithm to Trace Homotopy Curves of Nonlinear Circuits Composed by Piecewise Linear Modelled Devices

    PubMed Central

    Vazquez-Leal, H.; Jimenez-Fernandez, V. M.; Benhammouda, B.; Filobello-Nino, U.; Sarmiento-Reyes, A.; Ramirez-Pinero, A.; Marin-Hernandez, A.; Huerta-Chua, J.

    2014-01-01

    We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation. PMID:25184157

  15. Tunable strong nonlinearity of a micromechanical beam embedded in a dc-superconducting quantum interference device

    SciTech Connect

    Ella, Lior Yuvaraj, D.; Suchoi, Oren; Shtempluk, Oleg; Buks, Eyal

    2015-01-07

    We present a study of the controllable nonlinear dynamics of a micromechanical beam coupled to a dc-SQUID (superconducting quantum interference device). The coupling between these systems places the modes of the beam in a highly nonlinear potential, whose shape can be altered by varying the bias current and applied flux of the SQUID. We detect the position of the beam by placing it in an optical cavity, which sets free the SQUID to be used solely for actuation. This enables us to probe the previously unexplored full parameter space of this device. We measure the frequency response of the beam and find that it displays a Duffing oscillator behavior which is periodic in the applied magnetic flux. To account for this, we develop a model based on the standard theory for SQUID dynamics. In addition, with the aim of understanding if the device can reach nonlinearity at the single phonon level, we use this model to show that the responsivity of the current circulating in the SQUID to the position of the beam can become divergent, with its magnitude limited only by noise. This suggests a direction for the generation of macroscopically distinguishable superposition states of the beam.

  16. Nonlinear Optical Properties of Semiconducting Polymers.

    DTIC Science & Technology

    1990-01-01

    D. Moses, K. Akagi and A. J. Heeger, P 3A, 10 724 (1988). Time-Resolved Waveguide Modulation of a Conjugated Polymer, M. Sinclair, D. McBranch, D...Photoinduced Metallic State and for Photoinduced Superconductivity, Solid State Communications (in P irss). b. Papers published in Refereed Journals M...and F. Wudl, Linear and Nonlirear Optical Studies of Poly( p -phenylene- vinylene) Derivatives and Polydiacetylene 4BCMU, Synth. Met. Z2, E85 (1989) M

  17. Identification procedures for the charge-controlled nonlinear noise model of microwave electron devices

    NASA Astrophysics Data System (ADS)

    Filicori, Fabio; Traverso, Pier Andrea; Florian, Corrado; Borgarino, Mattia

    2004-05-01

    The basic features of the recently proposed Charge-Controlled Non-linear Noise (CCNN) model for the prediction of low-to-high-frequency noise up-conversion in electron devices under large-signal RF operation are synthetically presented. It is shown that the different noise generation phenomena within the device can be described by four equivalent noise sources, which are connected at the ports of a "noiseless" device model and are non-linearly controlled by the time-varying instantaneous values of the intrinsic device voltages. For the empirical identification of the voltage-controlled equivalent noise sources, different possible characterization procedures, based not only on conventional low-frequency noise data, but also on different types of noise measurements carried out under large-signal RF operating conditions are discussed. As an example of application, the measurement-based identification of the CCNN model for a GaInP heterojunction bipolar microwave transistor is presented. Preliminary validation results show that the proposed model can describe with adequate accuracy not only the low-frequency noise of the HBT, but also its phase-noise performance in a prototype VCO implemented by using the same monolithic GaAs technology.

  18. Microscopy of semiconducting materials

    NASA Astrophysics Data System (ADS)

    Pennycook, S. J.

    1991-04-01

    The purpose of the trip was to present an invited talk at the 7th Oxford Conference on Microscopy of Semiconducting Materials entitled, High-Resolution Z-Contrast Imaging of Heterostructures and Superlattices, (Oxford, United Kingdom) and to visit VG Microscopes, East Grinstead, for discussions on the progress of the Oak Ridge National Laboratory (ORNL) 300-kV high-resolution scanning transmission electron microscope (STEM), which is currently on order. The traveler also visited three other institutions with 100-kV STEMs that either have or intend to purchase the necessary modifications to provide Z-contrast capability similar to that of the existing ORNL machine. Specifically, Max-Planck Institut fuer Metallforschung (Stuttgart, Germany); Cambridge University, Department of Materials Science and Metallurgy (Cambridge, United Kingdom); and Cavendish Laboratory, Cambridge University (Cambridge, United Kingdom) were visited. In addition, discussions were held with C. Humphreys on the possibility of obtaining joint funding for collaborative research involving electron beam writing and Z-contrast imaging in the Cambridge and Oak Ridge STEMs, respectively.

  19. Nonlinear optimization-based device-free localization with outlier link rejection.

    PubMed

    Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

    2015-04-07

    Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach.

  20. Nonlinear Optimization-Based Device-Free Localization with Outlier Link Rejection

    PubMed Central

    Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

    2015-01-01

    Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach. PMID:25853406

  1. Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

    NASA Astrophysics Data System (ADS)

    Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

    2016-08-01

    Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

  2. Integrated nanoplasmonic waveguides for magnetic, nonlinear, and strong-field devices

    NASA Astrophysics Data System (ADS)

    Sederberg, Shawn; Firby, Curtis J.; Greig, Shawn R.; Elezzabi, Abdulhakem Y.

    2017-01-01

    As modern complementary-metal-oxide-semiconductor (CMOS) circuitry rapidly approaches fundamental speed and bandwidth limitations, optical platforms have become promising candidates to circumvent these limits and facilitate massive increases in computational power. To compete with high density CMOS circuitry, optical technology within the plasmonic regime is desirable, because of the sub-diffraction limited confinement of electromagnetic energy, large optical bandwidth, and ultrafast processing capabilities. As such, nanoplasmonic waveguides act as nanoscale conduits for optical signals, thereby forming the backbone of such a platform. In recent years, significant research interest has developed to uncover the fundamental physics governing phenomena occurring within nanoplasmonic waveguides, and to implement unique optical devices. In doing so, a wide variety of material properties have been exploited. CMOS-compatible materials facilitate passive plasmonic routing devices for directing the confined radiation. Magnetic materials facilitate time-reversal symmetry breaking, aiding in the development of nonreciprocal isolators or modulators. Additionally, strong confinement and enhancement of electric fields within such waveguides require the use of materials with high nonlinear coefficients to achieve increased nonlinear optical phenomenon in a nanoscale footprint. Furthermore, this enhancement and confinement of the fields facilitate the study of strong-field effects within the solid-state environment of the waveguide. Here, we review current state-of-the-art physics and applications of nanoplasmonic waveguides pertaining to passive, magnetoplasmonic, nonlinear, and strong-field devices. Such components are essential elements in integrated optical circuitry, and each fulfill specific roles in truly developing a chip-scale plasmonic computing architecture.

  3. Integrated nanoplasmonic waveguides for magnetic, nonlinear, and strong-field devices

    NASA Astrophysics Data System (ADS)

    Sederberg, Shawn; Firby, Curtis J.; Greig, Shawn R.; Elezzabi, Abdulhakem Y.

    2016-11-01

    As modern complementary-metal-oxide-semiconductor (CMOS) circuitry rapidly approaches fundamental speed and bandwidth limitations, optical platforms have become promising candidates to circumvent these limits and facilitate massive increases in computational power. To compete with high density CMOS circuitry, optical technology within the plasmonic regime is desirable, because of the sub-diffraction limited confinement of electromagnetic energy, large optical bandwidth, and ultrafast processing capabilities. As such, nanoplasmonic waveguides act as nanoscale conduits for optical signals, thereby forming the backbone of such a platform. In recent years, significant research interest has developed to uncover the fundamental physics governing phenomena occurring within nanoplasmonic waveguides, and to implement unique optical devices. In doing so, a wide variety of material properties have been exploited. CMOS-compatible materials facilitate passive plasmonic routing devices for directing the confined radiation. Magnetic materials facilitate time-reversal symmetry breaking, aiding in the development of nonreciprocal isolators or modulators. Additionally, strong confinement and enhancement of electric fields within such waveguides require the use of materials with high nonlinear coefficients to achieve increased nonlinear optical phenomenon in a nanoscale footprint. Furthermore, this enhancement and confinement of the fields facilitate the study of strong-field effects within the solid-state environment of the waveguide. Here, we review current state-of-the-art physics and applications of nanoplasmonic waveguides pertaining to passive, magnetoplasmonic, nonlinear, and strong-field devices. Such components are essential elements in integrated optical circuitry, and each fulfill specific roles in truly developing a chip-scale plasmonic computing architecture.

  4. Advances in nonlinear characterization of millimetre-wave devices for telecommunications

    NASA Astrophysics Data System (ADS)

    Parker, Anthony E.

    2007-12-01

    Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias dependent change in trapped charge, and variations due to impact ionization. These are feedback mechanisms that contribute to intermodulation as a memory effect does. A FET is better viewed as a nonlinear system with feedback, bias dependent rates, and high-order nonlinear conductance and charge storage with specific terminal to terminal interaction. Identifying and characterizing FET dynamics and linearity is a key step in the design process. Extraction of true intrinsic characteristics is an important first step to understanding the physics of trapping and heating within the device. Standard measurement techniques tend to derive access networks with an emphasis on scaling with layout geometry. The intrinsic device is then modelled as whatever is left after de-embedding the measurements. As such, the intrinsic model exhibits significant frequency dispersions and behaviour that is not easily related to the operation of the transistor. A correct determination of the access network reveals that the dispersions within the intrinsic data are related to physical process, such as heating and trapping. Recent work has been carried out to accurately implement trapping within a circuit simulator. This is key to correct prediction of intermodulation and bias dependence effects generated by a FET. It is shown that heating significantly affects trapping and is an important factor in the transient rate dependence of the characteristics. The implementation of trapping within a circuit model, and its consequences on linearity are explored.

  5. Step-response of a torsional device with multiple discontinuous non-linearities: Formulation of a vibratory experiment

    NASA Astrophysics Data System (ADS)

    Krak, Michael D.; Dreyer, Jason T.; Singh, Rajendra

    2016-03-01

    A vehicle clutch damper is intentionally designed to contain multiple discontinuous non-linearities, such as multi-staged springs, clearances, pre-loads, and multi-staged friction elements. The main purpose of this practical torsional device is to transmit a wide range of torque while isolating torsional vibration between an engine and transmission. Improved understanding of the dynamic behavior of the device could be facilitated by laboratory measurement, and thus a refined vibratory experiment is proposed. The experiment is conceptually described as a single degree of freedom non-linear torsional system that is excited by an external step torque. The single torsional inertia (consisting of a shaft and torsion arm) is coupled to ground through parallel production clutch dampers, which are characterized by quasi-static measurements provided by the manufacturer. Other experimental objectives address physical dimensions, system actuation, flexural modes, instrumentation, and signal processing issues. Typical measurements show that the step response of the device is characterized by three distinct non-linear regimes (double-sided impact, single-sided impact, and no-impact). Each regime is directly related to the non-linear features of the device and can be described by peak angular acceleration values. Predictions of a simplified single degree of freedom non-linear model verify that the experiment performs well and as designed. Accordingly, the benchmark measurements could be utilized to validate non-linear models and simulation codes, as well as characterize dynamic parameters of the device including its dissipative properties.

  6. Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

    NASA Astrophysics Data System (ADS)

    Driscoll, Jeffrey B.

    Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

  7. Optical diode action from axially asymmetric nonlinearity in an all-carbon solid-state device.

    PubMed

    Anand, Benoy; Podila, Ramakrishna; Lingam, Kiran; Krishnan, S R; Siva Sankara Sai, S; Philip, Reji; Rao, Apparao M

    2013-01-01

    Nanostructured carbons are posited to offer an alternative to silicon and lead to further miniaturization of photonic and electronic devices. Here, we report the experimental realization of the first all-carbon solid-state optical diode that is based on axially asymmetric nonlinear absorption in a thin saturable absorber (graphene) and a thin reverse saturable absorber (C60) arranged in tandem. This all-optical diode action is polarization independent and has no phase-matching constraints. The nonreciprocity factor of the device can be tuned by varying the number of graphene layers and the concentration or thickness of the C60 coating. This ultracompact graphene/C60 based optical diode is versatile with an inherently large bandwidth, chemical and thermal stability, and is poised for cost-effective large-scale integration with existing fabrication technologies.

  8. Superconducting-semiconducting nanowire hybrid microwave circuits

    NASA Astrophysics Data System (ADS)

    de Lange, G.; van Heck, B.; Bruno, A.; van Woerkom, D.; Geresdi, A.; Plissard, S. R.; Bakkers, E. P. A. M.; Akhmerov, A. R.; Dicarlo, L.

    2015-03-01

    Hybrid superconducting-semiconducting circuits offer a versatile platform for studying quantum effects in mesoscopic solid-state systems. We report the realization of hybrid artificial atoms based on Indium-Arsenide nanowire Josephson elements in a circuit quantum electrodynamics architecture. Transmon-like single-junction devices have gate-tunable transition frequencies. Split-junction devices behave as transmons near zero applied flux and as flux qubits near half flux quantum, wherein states with oppositely flowing persistent current can be driven by microwaves. This flux-qubit like behaviour results from non-sinusoidal current-phase relations in the nanowire Josephson elements. These hybrid microwave circuits are made entirely of magnetic-field compatible materials, offering new opportunities for hybrid experiments combining microwave circuits with polarized spin ensembles and Majorana bound states. We acknowledge funding from Microsoft Research and the Dutch Organization for Fundamental Research on Matter (FOM).

  9. Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

    NASA Technical Reports Server (NTRS)

    Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.; Clark, R.

    1998-01-01

    Ion implantation has been shown to produce a high density of metal colloids within the layer regions of glasses and crystalline materials. The high-precipitate volume fraction and small size of metal nanoclusters formed leads to values for the third-order susceptibility much greater than those for metal doped solids. This has stimulated interest in use of ion implantation to make nonlinear optical materials. On the other side, LiNbO3 has proved to be a good material for optical waveguides produced by MeV ion implantation. Light confinement in these waveguides is produced by refractive index step difference between the implanted region and the bulk material. Implantation of LiNbO3 with MeV metal ions can therefore result into nonlinear optical waveguide structures with great potential in a variety of device applications. We describe linear and nonlinear optical properties of a waveguide structure in LiNbO3-based composite material produced by silver ion implantation in connection with mechanisms of its formation.

  10. Mesoscale Engineering of Nanocomposite Nonlinear Optical Materials

    SciTech Connect

    Afonso, C.N.; Feldman, L.C.; Gonella, F.; Haglund, R.F.; Luepke, G.; Magruder, R.H.; Mazzoldi, P.; Osborne, D.H.; Solis, J.; Zuhr, R.A.

    1999-11-01

    Complex nonlinear optical materials comprising elemental, compound or alloy quantum dots embedded in appropriate dielectric or semiconducting hosts may be suitable for deployment in photonic devices. Ion implantation, ion exchange followed by ion implantation, and pulsed laser deposition have ail been used to synthesize these materials. However, the correlation between the parameters of energetic-beam synthesis and the nonlinear optical properties is still very rudimentary when one starts to ask what is happening at nanoscale dimensions. Systems integration of complex nonlinear optical materials requires that the mesoscale materials science be well understood within the context of device structures. We discuss the effects of beam energy and energy density on quantum-dot size and spatial distribution, thermal conductivity, quantum-dot composition, crystallinity and defects - and, in turn, on the third-order optical susceptibility of the composite material. Examples from recent work in our laboratories are used to illustrate these effects.

  11. Generating Non-Linear Concentration Gradients in Microfluidic Devices for Cell Studies

    PubMed Central

    Selimović, Šeila; Sim, Woo Young; Kim, Sang Bok; Jang, Yun Ho; Lee, Won Gu; Khabiry, Masoud; Bae, Hojae; Jambovane, Sachin; Hong, Jong Wook; Khademhosseini, Ali

    2011-01-01

    We describe a microfluidic device for generating non-linear (exponential and sigmoidal) concentration gradients, coupled with a microwell array for cell storage and analysis. The device has two inputs for co-flowing multiple aqueous solutions, a main co-flow channel and an asymmetrical grid of fluidic channels that allows the two solutions to combine at intersection points without fully mixing. Due to this asymmetry and diffusion of the two species in the co-flow channel, varying amounts of the two solutions enter each fluidic path. This induces exponential and sigmoidal concentration gradients at low and high flow rates, respectively, making the microfluidic device versatile. A key feature of this design is that it is space-saving, as it does not require multiplexing or a separate array of mixing channels. Furthermore, the gradient structure can be utilized in concert with cell experiments, to expose cells captured in microwells to various concentrations of soluble factors. We demonstrate the utility of this design to assess the viability of fibroblast cells in response to a range of hydrogen peroxide (H2O2) concentrations. PMID:21344866

  12. Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

    NASA Astrophysics Data System (ADS)

    Wang, Zongwei; Kang, Jian; Yu, Zhizhen; Fang, Yichen; Ling, Yaotian; Cai, Yimao; Huang, Ru; Wang, Yangyuan

    2017-02-01

    A resistive switching device with inherent nonlinear characteristics through a delicately engineered interfacial layer is an ideal component to be integrated into passive crossbar arrays for the suppression of sneaking current, especially in ultra-dense 3D integration. In this paper, we demonstrated a TaOx-based bipolar resistive switching device with a nearly symmetrical bi-directional nonlinear feature through interface engineering. This was accomplished by introducing an ultra-thin interfacial layer (SiO2-x) with unique features, including a large band gap and a certain level of negative heat of oxide formation between the top electrode (TiN) and resistive layer (TaOx). The devices exhibit excellent nonlinear property under both positive and negative bias. Modulation of the inherent nonlinearity as well as the resistive switching mechanism are comprehensively studied by scrutinizing the results of the experimental control groups and the extensive characterizations including detailed compositional analysis, which suggests that the underlying mechanism of the nonlinear behavior is associatively governed by the serially connected metallic conductive filament and Flower-Nordheim tunneling barrier formed by the SiO2-x interface layer. The proposed device in this work has great potential to be implemented in future massive storage memory applications of high-density selector-free crossbar structure.

  13. A time domain vector finite element method for the full wave simulation of nonlinear photonic devices

    NASA Astrophysics Data System (ADS)

    Fisher, Aaron C.

    We have developed a mixed Vector Finite Element Method (VFEM) for Maxwell's equations with third order polarization terms. The method allows for discretization of complicated device geometries with arbitrary order representations of the B and E fields, and up to 4th order accurate time discretization. Additionally we have implemented a series of computational optimizations that significantly increase the scale of simulations that can be performed with this method. Among these optimizations is a new generalized mass lumping method that we developed which reduces the computational cost of the finite element system solve by a factor of 10x. In this dissertation we will present the Vector Finite Element Method, and the computational optimizations that we employed. Additionally, we will present a series of analyses and simulations that were performed to validate the method. Finally, we will present some production runs using this method, including nonlinear mode mixing in waveguides and supercontinuum generation in a photonic crystal fiber.

  14. Prolonging charge separation in P3HT-SWNT composites using highly enriched semiconducting nanotubes.

    PubMed

    Holt, Josh M; Ferguson, Andrew J; Kopidakis, Nikos; Larsen, Brian A; Bult, Justin; Rumbles, Garry; Blackburn, Jeffrey L

    2010-11-10

    Single-walled carbon nanotubes (SWNTs) have potential as electron acceptors in organic photovoltaics (OPVs), but the currently low-power conversion efficiencies of devices remain largely unexplained. We demonstrate effective redispersion of isolated, highly enriched semiconducting and metallic SWNTs into poly(3-hexylthiophene) (P3HT). We use these enriched blends to provide the first experimental evidence of the negative impact of metallic nanotubes. Time-resolved microwave conductivity reveals that the long-lived carrier population can be significantly increased by incorporating highly enriched semiconducting SWNTs into semiconducting polymer composites.

  15. Multigap Semiconducting ferroelectric perovskites

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Davies, Peter; Rappe, Andrew

    2013-03-01

    The energy conversion efficiency of a solar cell is directly related to the band gap of the material. By doping ferroelectric perovskites with Bi5+ on the B-site, we propose low band-gap materials suitable for bulk photovoltaic effect and related solar applications.Our DFT calculations indicate that the low-lying 6 s empty states of the electronegative Bi atom produce empty isolated bands in the gap of the parent materials, effectively lowering the band gap by 1 ~2eV in various perovskites. Ferroelectricity (and therefore inversion symmetry breaking) weakens but survives upon doping, which enables the ``shift current'' mechanism for photocurrent generation, while the decreased band gap helps absorb low energy photons in the visible range. Furthermore, the existence of multiple band gaps allows for solar conversion devices with efficiency beyond the traditional Shockly-Queisser limit, in which successive photon excitations result in carriers with higher energy than a single-step excitation would achieve.

  16. Atomically thin semiconducting layers and nanomembranes: a review

    NASA Astrophysics Data System (ADS)

    Dragoman, Mircea; Dragoman, Daniela; Tiginyanu, Ion

    2017-03-01

    This article reviews the main physical properties of atomically thin semiconductors and the electronic devices based on them. We start with graphene, describing its physical properties and growth methods, followed by a discussion of its electronic device applications. Then, transition metal dichalcogenides (TMDs) are analyzed as a prototype of atomically thin semiconductors, their physical properties, growth methods, and electronic devices are discussed in detail. Finally, non-layered semiconducting membranes with thicknesses ranging from a few nanometers to about 50 nm, and considered as counterparts of atomically thin semiconductors, are analyzed, and their applications presented.

  17. Plasma effects in semiconducting nanowire growth

    NASA Astrophysics Data System (ADS)

    Ostrikov, Kostya (Ken); Seo, Dong Han; Mehdipour, Hamid; Cheng, Qijin; Kumar, Shailesh

    2012-02-01

    Three case studies are presented to show low-temperature plasma-specific effects in the solution of (i) effective control of nucleation and growth; (ii) environmental friendliness; and (iii) energy efficiency critical issues in semiconducting nanowire growth. The first case (related to (i) and (iii)) shows that in catalytic growth of Si nanowires, plasma-specific effects lead to a substantial increase in growth rates, decrease of the minimum nanowire thickness, and much faster nanowire nucleation at the same growth temperatures. For nucleation and growth of nanowires of the same thickness, much lower temperatures are required. In the second example (related to (ii)), we produce Si nanowire networks with controllable nanowire thickness, length, and area density without any catalyst or external supply of Si building material. This case is an environmentally-friendly alternative to the commonly used Si microfabrication based on a highly-toxic silane precursor gas. The third example is related to (iii) and demonstrates that ZnO nanowires can be synthesized in plasma-enhanced CVD at significantly lower process temperatures than in similar neutral gas-based processes and without compromising structural quality and performance of the nanowires. Our results are relevant to the development of next-generation nanoelectronic, optoelectronic, energy conversion and sensing devices based on semiconducting nanowires.Three case studies are presented to show low-temperature plasma-specific effects in the solution of (i) effective control of nucleation and growth; (ii) environmental friendliness; and (iii) energy efficiency critical issues in semiconducting nanowire growth. The first case (related to (i) and (iii)) shows that in catalytic growth of Si nanowires, plasma-specific effects lead to a substantial increase in growth rates, decrease of the minimum nanowire thickness, and much faster nanowire nucleation at the same growth temperatures. For nucleation and growth of nanowires

  18. Acceleration Sensing, Feedback Cooling, and Nonlinear Dynamics with Nanoscale Cavity-Optomechanical Devices

    NASA Astrophysics Data System (ADS)

    Krause, Alexander Grey

    Light has long been used for the precise measurement of moving bodies, but the burgeoning field of optomechanics is concerned with the interaction of light and matter in a regime where the typically weak radiation pressure force of light is able to push back on the moving object. This field began with the realization in the late 1960's that the momentum imparted by a recoiling photon on a mirror would place fundamental limits on the smallest measurable displacement of that mirror. This coupling between the frequency of light and the motion of a mechanical object does much more than simply add noise, however. It has been used to cool objects to their quantum ground state, demonstrate electromagnetically-induced-transparency, and modify the damping and spring constant of the resonator. Amazingly, these radiation pressure effects have now been demonstrated in systems ranging 18 orders of magnitude in mass (kg to fg). In this work we will focus on three diverse experiments in three different optomechanical devices which span the fields of inertial sensors, closed-loop feedback, and nonlinear dynamics. The mechanical elements presented cover 6 orders of magnitude in mass (ng to fg), but they all employ nano-scale photonic crystals to trap light and resonantly enhance the light-matter interaction. In the first experiment we take advantage of the sub-femtometer displacement resolution of our photonic crystals to demonstrate a sensitive chip-scale optical accelerometer with a kHz-frequency mechanical resonator. This sensor has a noise density of approximately 10 micro-g/rt-Hz over a useable bandwidth of approximately 20 kHz and we demonstrate at least 50 dB of linear dynamic sensor range. We also discuss methods to further improve performance of this device by a factor of 10. In the second experiment, we used a closed-loop measurement and feedback system to damp and cool a room-temperature MHz-frequency mechanical oscillator from a phonon occupation of 6.5 million down to

  19. A nonlinear MEMS electrostatic kinetic energy harvester for human-powered biomedical devices

    SciTech Connect

    Lu, Y.; Cottone, F.; Marty, F.; Basset, P.; Galayko, D.

    2015-12-21

    This article proposes a silicon-based electrostatic kinetic energy harvester with an ultra-wide operating frequency bandwidth from 1 Hz to 160 Hz. This large bandwidth is obtained, thanks to a miniature tungsten ball impacting with a movable proof mass of silicon. The motion of the silicon proof mass is confined by nonlinear elastic stoppers on the fixed part standing against two protrusions of the proof mass. The electrostatic transducer is made of interdigited-combs with a gap-closing variable capacitance that includes vertical electrets obtained by corona discharge. Below 10 Hz, the e-KEH offers 30.6 nJ per mechanical oscillation at 2 g{sub rms}, which makes it suitable for powering biomedical devices from human motion. Above 10 Hz and up to 162 Hz, the harvested power is more than 0.5 μW with a maximum of 4.5 μW at 160 Hz. The highest power of 6.6 μW is obtained without the ball at 432 Hz, in accordance with a power density of 142 μW/cm{sup 3}. We also demonstrate the charging of a 47-μF capacitor to 3.5 V used to power a battery-less wireless temperature sensor node.

  20. Strategies on improving the micro-fluidic devices using the nonlinear electro- and thermo-kinetic phenomena.

    PubMed

    Sugioka, Hideyuki

    2015-12-01

    Surface science is key to innovations on microfluidics, smart materials, and future non-equilibrium systems. However, challenging issues still exist in this field. In this article, from the viewpoint of the fundamental design, we will briefly review our strategies on improving the micro-fluidic devices using the nonlinear electro- and thermo-kinetic phenomena. In particular, we will review the microfluidic applications using ICEO, the correction based on the ion-conserving Poisson-Boltzmann theory, the direct simulation on ICEO, and the new horizon such as nonlinear thermo-kinetic phenomena and the artificial cilia.

  1. Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

    NASA Astrophysics Data System (ADS)

    Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

    2016-12-01

    Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (˜15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes.

  2. Ohmic contacts to semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  3. Doping of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kutler, Paul (Technical Monitor)

    1997-01-01

    Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

  4. Graphene-assisted nonlinear optical device for four-wave mixing based tunable wavelength conversion of QPSK signal.

    PubMed

    Hu, Xiao; Zeng, Mengqi; Wang, Andong; Zhu, Long; Fu, Lei; Wang, Jian

    2015-10-05

    We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using such graphene-assisted nonlinear optical device, we experimentally demonstrate tunable wavelength conversion of a 10 Gbaud quadrature phase-shift keying (QPSK) signal by exploiting degenerate four-wave mixing (FWM) progress in graphene. We study the conversion efficiency as functions of the pump power and pump wavelength and evaluate the bit-error rate (BER) performance. The observed optical signal-to-noise ratio (OSNR) penalties for tunable QPSK wavelength conversion are less than 2.2 dB at a BER of 1 × 10(-3).

  5. Application of the nonlinear, double-dynamic Taguchi method to the precision positioning device using combined piezo-VCM actuator.

    PubMed

    Liu, Yung-Tien; Fung, Rong-Fong; Wang, Chun-Chao

    2007-02-01

    In this research, the nonlinear, double-dynamic Taguchi method was used as design and analysis methods for a high-precision positioning device using the combined piezo-voice-coil motor (VCM) actuator. An experimental investigation into the effects of two input signals and three control factors were carried out to determine the optimum parametric configuration of the positioning device. The double-dynamic Taguchi method, which permits optimization of several control factors concurrently, is particularly suitable for optimizing the performance of a positioning device with multiple actuators. In this study, matrix experiments were conducted with L9(3(4)) orthogonal arrays (OAs). The two most critical processes for the optimization of positioning device are the identification of the nonlinear ideal function and the combination of the double-dynamic signal factors for the ideal function's response. The driving voltage of the VCM and the waveform amplitude of the PZT actuator are combined into a single quality characteristic to evaluate the positioning response. The application of the double-dynamic Taguchi method, with dynamic signal-to-noise ratio (SNR) and L9(3(4)) OAs, reduced the number of necessary experiments. The analysis of variance (ANOVA) was applied to set the optimum parameters based on the high-precision positioning process.

  6. Electrospun Composite Nanofibers of Semiconductive Polymers for Coaxial PN Junctions

    NASA Astrophysics Data System (ADS)

    Serrano, William; Thomas, Sylvia

    The objective of this research is to investigate the conditions under P3HT and Activink, semiconducting polymers, form 1 dimension (1D) coaxial p-n junctions and to characterize their behavior in the presence of UV radiation and organic gases. For the first time, fabrication and characterization of semiconductor polymeric single fiber coaxial arrangements will be studied. Electrospinning, a low cost, fast and reliable method, with a coaxial syringe arrangement will be used to fabricate these fibers. With the formation of fiber coaxial arrangements, there will be investigations of dimensionality crossovers e.g., from one-dimensional (1D) to two-dimensional (2D). Coaxial core/shell fibers have been realized as seen in a recent publication on an electrospun nanofiber p-n heterojunction of oxides (BiFeO3 and TiO2, respectively) using the electrospinning technique with hydrothermal method. In regards to organic semiconducting coaxial p-n junction nanofibers, no reported studies have been conducted, making this study fundamental and essential for organic semiconducting nano devices for flexible electronics and multi-dimensional integrated circuits.

  7. Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

    2007-01-01

    The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

  8. Spray printing of organic semiconducting single crystals

    PubMed Central

    Rigas, Grigorios-Panagiotis; Payne, Marcia M.; Anthony, John E.; Horton, Peter N.; Castro, Fernando A.; Shkunov, Maxim

    2016-01-01

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics. PMID:27874001

  9. Spray printing of organic semiconducting single crystals

    NASA Astrophysics Data System (ADS)

    Rigas, Grigorios-Panagiotis; Payne, Marcia M.; Anthony, John E.; Horton, Peter N.; Castro, Fernando A.; Shkunov, Maxim

    2016-11-01

    Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

  10. Correlation between quasi-static and dynamic experiments for a practical torsional device with multiple discontinuous nonlinearities

    NASA Astrophysics Data System (ADS)

    Krak, Michael D.; Singh, Rajendra

    2016-09-01

    Vehicle clutch dampers belong to a family of torsional devices or isolators that contain multi-staged torsional springs, pre-load features, clearances, and multi-staged dry friction elements. Estimation of elastic and dissipative parameters is usually carried out under quasi-static loading and then these static parameters are often assumed when predicting dynamic responses. For the purpose of comparison, this article proposes a new time domain parameter estimation method under dynamic, transient loading conditions. The proposed method assumes a priori knowledge of few nonlinear features based on the design and quasi-static characterization. Angular motion measurements from a component-level laboratory experiment under dynamic loading are utilized. Elastic parameters are first estimated through an instantaneous stochastic linearization technique. A model-based approach and energy balance principle are employed to estimate a combination of viscous and Coulomb damping parameters for seven local (stage-dependent) and global damping formulations for a practical device. The proposed method is validated by comparing time domain predictions from nonlinear models to dynamic measurements. Nonlinear models that utilize the proposed damping formulations are found to be superior to those that solely rely on parameters from a quasi-static experiment.

  11. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2010-05-11

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  12. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2012-10-02

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  13. A non-device-specific approach to display characterization based on linear, nonlinear, and hybrid search algorithms.

    PubMed

    Ban, Hiroshi; Yamamoto, Hiroki

    2013-05-31

    In almost all of the recent vision experiments, stimuli are controlled via computers and presented on display devices such as cathode ray tubes (CRTs). Display characterization is a necessary procedure for such computer-aided vision experiments. The standard display characterization called "gamma correction" and the following linear color transformation procedure are established for CRT displays and widely used in the current vision science field. However, the standard two-step procedure is based on the internal model of CRT display devices, and there is no guarantee as to whether the method is applicable to the other types of display devices such as liquid crystal display and digital light processing. We therefore tested the applicability of the standard method to these kinds of new devices and found that the standard method was not valid for these new devices. To overcome this problem, we provide several novel approaches for vision experiments to characterize display devices, based on linear, nonlinear, and hybrid search algorithms. These approaches never assume any internal models of display devices and will therefore be applicable to any display type. The evaluations and comparisons of chromaticity estimation accuracies based on these new methods with those of the standard procedure proved that our proposed methods largely improved the calibration efficiencies for non-CRT devices. Our proposed methods, together with the standard one, have been implemented in a MATLAB-based integrated graphical user interface software named Mcalibrator2. This software can enhance the accuracy of vision experiments and enable more efficient display characterization procedures. The software is now available publicly for free.

  14. Thermal Crosslinking of Organic Semiconducting Polythiophene Improves Transverse Hole Conductivity

    SciTech Connect

    Gearba, I.R.; Nam, C.-Y.; Pindak, R.; Black, C.T.

    2009-10-26

    Thermal crosslinking using a suitable radical initiator simultaneously improves electrical conductivity in the semiconducting polymer poly(3-hexylthiophene) and makes the material insoluble. Crosslinked polythiophene shows as much as a fivefold increase in hole conductivity across the film thickness without any shift in spectral light absorption. Grazing incidence x-ray diffraction reveals more in-plane polymer lamellae stacking with only a small decrease in film crystallinity. Improved transverse conductivity increases the performance of model planar solar cells by threefold, from 0.07% to 0.2%. The ability to render polythiophene insoluble without disrupting film structural order enables fabrication pathways to more complex device architectures.

  15. High-mobility ultrathin semiconducting films prepared by spin coating

    NASA Astrophysics Data System (ADS)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  16. High-mobility ultrathin semiconducting films prepared by spin coating.

    PubMed

    Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

    2004-03-18

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  17. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Zhuang, Shendong; Chen, Yan; Xia, Yidong; Tang, Nujiang; Xu, Xiaoyong; Hu, Jingguo; Chen, Zhuo

    2016-04-01

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  18. An Exploration of Neutron Detection in Semiconducting Boron Carbide

    NASA Astrophysics Data System (ADS)

    Hong, Nina

    The 3He supply problem in the U.S. has necessitated the search for alternatives for neutron detection. The neutron detection efficiency is a function of density, atomic composition, neutron absorption cross section, and thickness of the neutron capture material. The isotope 10B is one of only a handful of isotopes with a high neutron absorption cross section---3840 barns for thermal neutrons. So a boron carbide semiconductor represents a viable alternative to 3He. This dissertation provides an evaluation of the performance of semiconducting boron carbide neutron detectors grown by plasma enhance chemical vapor deposition (PECVD) in order to determine the advantages and drawbacks of these devices for neutron detection. Improved handling of the PECVD system has resulted in an extremely stable plasma, enabling deposition of thick films of semiconducting boron carbide. A variety of material and semiconducting characterization tools have been used to investigate the structure and electronic properties of boron carbide thin films, including X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, infrared/Raman spectroscopy, current-voltage measurements and capacitance-voltage measurements. Elemental concentrations in the boron carbide films have been obtained from Rutherford backscattering and elastic recoil detection analysis. Solid state neutron detection devices have been fabricated in the form of heterostructured p-n diodes, p-type boron carbide/n-type Si. Operating conditions, including applied bias voltage, and time constants, have been optimized for maximum detection efficiency and correlated to the semiconducting properties investigated in separate electronic measurements. Accurate measurements of the neutron detection efficiency and the response of the detector to a wide range of neutron wavelengths have been performed at a well calibrated, tightly collimated, "white" cold neutron beam source using time-of-flight neutron detection technique

  19. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    DOEpatents

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  20. Nonlinear dynamics of a rack-pinion-rack device powered by the Casimir force.

    PubMed

    Miri, MirFaez; Nekouie, Vahid; Golestanian, Ramin

    2010-01-01

    Using the lateral Casimir force-a manifestation of the quantum fluctuations of the electromagnetic field between objects with corrugated surfaces-as the main force transduction mechanism, a nanomechanical device with rich dynamical behaviors is proposed. The device is made of two parallel racks that are moving in the same direction and a pinion in the middle that couples with both racks via the noncontact lateral Casimir force. The built-in frustration in the device causes it to be very sensitive and react dramatically to minute changes in the geometrical parameters and initial conditions of the system. The noncontact nature of the proposed device could help with the ubiquitous wear problem in nanoscale mechanical systems.

  1. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

    PubMed Central

    Kazemi, Alireza; He, Xiang; Alaie, Seyedhamidreza; Ghasemi, Javad; Dawson, Noel Mayur; Cavallo, Francesca; Habteyes, Terefe G.; Brueck, Steven R. J.; Krishna, Sanjay

    2015-01-01

    Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K. PMID:26126936

  2. An experimentally verified model for thermal microactuators including nonlinear material properties, vacuum, and intra-device heat conduction

    NASA Astrophysics Data System (ADS)

    Colbert, Keegan; Naraghi, Mohammad; Boyd, James G.

    2017-02-01

    This paper presents a model and computational method to predict the steady-state performance of thermal flexure microactuators at high input powers and various levels of partial vacuum. The model accounts for nonlinear temperature dependence of material properties, heat loss due to radiation, and intra-device heat transfer by conduction across an air gap. The model is validated by comparing the model predictions with the experimentally measured voltage, current, and displacement at standard conditions, prior to adjusting for partial vacuum. In order to understand the effect of nonlinearities on model reliability, the predictions of six additional hypothetical models are considered where (1) intra-device heat transfer is neglected, (2) radiation is neglected, (3) the thermal conductivity of silicon is assumed to be temperature-independent, (4) the thermal conductivity of air is assumed to be temperature-independent, (5) the electrical resistivity of silicon is assumed to be linear in temperature, and (6) the thermal expansion coefficient of silicon is assumed to be temperature-independent. All factors except radiation were shown to have a significant influence on the device performance especially at high input powers. The experimentally validated full model is then employed to predict the effect of reduced air pressure on the displacement and heat transfer properties of the actuator. This aspect of the study targets applications of thermal actuators in controlled environments such as space applications, actuators used for in situ micropositioning and tensile testing inside electron microscopy chambers, or actuators incorporated into the design of MEMS resonators. It was demonstrated that the maximum actuator displacement is not a linear function of reduced pressure and that it reaches a maximum at a certain partial vacuum level.

  3. Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices

    DTIC Science & Technology

    1998-05-12

    elevated temperatures that is accompanied by a decreased film thickness. As the temperature is decreased water is reabsorbed , and the film swells to its...Vogtle, Supramolecular Chemistry; Wiley, New York, 1993. ISAM NLO Thin Films and Devices Final Report 28 [6] J. H. Fuhrhop and J. Koning, Membrane and

  4. Piezo-phototronic effect devices

    DOEpatents

    Wang, Zhong L.; Yang, Qing

    2013-09-10

    A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

  5. Nonlinear saturation of the ion-electron Buneman instability in a spherical positively pulsed gridded inertial electrostatic confinement device

    SciTech Connect

    Bandara, R.; Khachan, J.

    2015-08-15

    A pulsed, positively biased gridded inertial electrostatic confinement device has been investigated experimentally, using Doppler broadened spectra and current and voltage traces as primary diagnostics. In the high current and energy regime explored in this paper resulting from the removal of the series ballast resistance from the external biasing circuit, large amplitude oscillations in the plasma current and potential were observed within 100 ns of the discharge onset. These oscillations are attributed to the nonlinear and saturated Buneman instability, characterised by a locked oscillation frequency as a function of increasing anode potential. The saturated Buneman instability is known to exhibit ion mass independent behaviour and cause electron trapping, resulting in a transient spatio-temporal virtual cathode and ponderomotive ion confinement, as evidenced by broadened spectra when operated at high currents.

  6. Single-Crystalline Aluminum Nanostructures on a Semiconducting GaAs Substrate for Ultraviolet to Near-Infrared Plasmonics.

    PubMed

    Liu, Hsuan-Wei; Lin, Fan-Cheng; Lin, Shi-Wei; Wu, Jau-Yang; Chou, Bo-Tsun; Lai, Kuang-Jen; Lin, Sheng-Di; Huang, Jer-Shing

    2015-04-28

    Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and is superior to noble metals in natural abundance, cost, and compatibility with modern semiconductor fabrication processes. Ultrasmooth single-crystalline metallic films are beneficial for the fabrication of high-definition plasmonic nanostructures, especially complex integrated nanocircuits. The absence of surface corrugation and crystal boundaries also guarantees superior optical properties and applications in nanolasers. Here, we present UV to near-infrared plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with a molecular beam epitaxy method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and nonlinear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance, and the nanoholes are found to support both photonic modes and localized surface plasmon resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such a counterintuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on a high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices.

  7. Unification of trap-limited electron transport in semiconducting polymers.

    PubMed

    Nicolai, H T; Kuik, M; Wetzelaer, G A H; de Boer, B; Campbell, C; Risko, C; Brédas, J L; Blom, P W M

    2012-10-01

    Electron transport in semiconducting polymers is usually inferior to hole transport, which is ascribed to charge trapping on isolated defect sites situated within the energy bandgap. However, a general understanding of the origin of these omnipresent charge traps, as well as their energetic position, distribution and concentration, is lacking. Here we investigate electron transport in a wide range of semiconducting polymers by current-voltage measurements of single-carrier devices. We observe for this materials class that electron transport is limited by traps that exhibit a gaussian energy distribution in the bandgap. Remarkably, the electron-trap distribution is identical for all polymers considered: the number of traps amounts to 3 × 10(23) traps per m(3) centred at an energy of ~3.6 eV below the vacuum level, with a typical distribution width of ~0.1 eV. This indicates that the electron traps have a common origin that, we suggest, is most likely related to hydrated oxygen complexes. A consequence of this finding is that the trap-limited electron current can be predicted for any polymer.

  8. Surface passivation of semiconducting oxides by self-assembled nanoparticles

    PubMed Central

    Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

    2016-01-01

    Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

  9. Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

    NASA Astrophysics Data System (ADS)

    Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

    2016-10-01

    Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces.

  10. Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

    PubMed

    Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

    2015-03-25

    Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

  11. Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

    PubMed Central

    Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

    2016-01-01

    Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces. PMID:27762315

  12. Synthesis of hydrazone functionalized epoxy polymers for non-linear optical device applications

    NASA Astrophysics Data System (ADS)

    Singh, Rajendra K.

    A series of twelve, thermally crosslinkable, epoxy polymers bearing covalently attached NLO-active hydrazone chromophores were synthesized. The primary focus was on the synthesis of two series of NLO-active hydroxy functionalized hydrazone chromophores. The first series, called the monohydroxy series (Hydrazones I--VI) comprised of six monohydroxy functionalized hydrazones and the second series consisted of six dihydroxy functionalized hydrazones (Hydrazones VII--XII). These hydrazone chromophores were then grafted, via the hydroxy functionality, on to a commercial epoxy polymer to obtain twelve NLO-active soluble prepolymers. The grafting reaction yields multiple secondary hydroxyl sites due to opening of the epoxide rings and these hydroxyl groups were used for further crosslinking by formulating the prepolymers with a blocked polyisocyanate commercial crosslinker. This formulation was spin coated on glass slides to form 2--2.5 m m thick uniform, defect free, transparent films. The films were corona poled, above their Tg, to align the chromophores in a noncentrosymmetric fashion and simultaneously complete the thermal cure that results in a highly crosslinked network. Finally the thermal characteristics of the second order nonlinearity of the twelve polymers are compared to illustrate the key structure-property relationships underlying the performance of the films.

  13. A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

    SciTech Connect

    Beninato, A.; Baglio, S.; Andò, B.; Emery, T.; Bulsara, A. R.; Jenkins, C.; Palkar, V.

    2013-12-09

    Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3} shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a “blueprint” for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or “target” B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

  14. A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

    NASA Astrophysics Data System (ADS)

    Beninato, A.; Emery, T.; Baglio, S.; Andò, B.; Bulsara, A. R.; Jenkins, C.; Palkar, V.

    2013-12-01

    Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi0.7Dy0.3FeO3 shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi0.7Dy0.3FeO3, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a "blueprint" for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or "target" B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.

  15. Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

    NASA Astrophysics Data System (ADS)

    Yan, Shu

    Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping

  16. Optoelectronic properties of semiconducting polymers and related applications

    NASA Astrophysics Data System (ADS)

    Wang, Jian

    2000-10-01

    Since the discovery of semiconducting (conjugated) polymers in 1977 by Heeger, MacDiarmid and Shirakawa, a wide variety of electrical and optical devices have been developed using semiconducting polymers, such as light-emitting diodes, photodetectors, and fluorescent biosensors. All the devices are based on the electro-optical or optoelectronic properties of conjugated polymers. So understanding the fundamental electronic structures is of particular importance. A general picture of electronic excitation of PPV upon photoexcitation remains a subject of intense debate. I addressed this problem by studying the photoconductivity excitation profile of aligned PPV sample with polarized light parallel and perpendicular to the chain axis. The spectral signature of the exciton is observed in the excitation profile as a narrow peak that emerges just below the band edge upon increasing the external field, the defect density or the temperature. The exciton binding energy is obtained from the energy of the narrow exciton peak with respect to the band edge, and independently, from analysis of the field dependence and temperature dependence of the exciton dissociation: Eb ˜ 60 meV. The fluorescence quenching of luminescent polymers by electron acceptors through photoinduced charge transfer opens a new opportunity for conjugated polymers in biological and chemical sensors for use in medical diagnostics and toxicology. A comprehensive studies of the quenching mechanisms in two polymer:quencher systems in solutions are presented. The basic quenching mode is identified by carefully studying the buffer ions' effects, absorption profile, and temperature effects. Finally, an application of photodetector utilizing conjugated polymers is presented. A large area photodetector is demonstrated to have true color (24 bit) resolution.

  17. Growth and study of nonlinear optical materials for frequency conversion devices with applications in defence and security

    NASA Astrophysics Data System (ADS)

    Tassev, V.; Snure, M.; Vangala, S.; Kimani, M.; Peterson, R.; Schunemann, P.

    2014-10-01

    A series of nonlinear materials including GaAs, GaP, and ZnSe have been examined to determine their suitability for non-linear frequency conversion devices (FCD) and more specifically their use as high power, compact and broadly tunable IR and THz sources for defense and security applications. The more mature GaAs was investigated to reveal the causes for the optical losses that restrict achievement of higher conversion efficiency in quasi-phasematched FCD, while the efforts with GaP were oriented in developing simple, cost effective techniques for fabrication of orientation patterned (OP) templates and optimizing the subsequent thick HVPE growth on these templates. Thus, average growth rates of 50- 70 μm/h were achieved in up to 8-hour long experiments. High optical layer quality was achieved by suitable control of the process parameters. The optimal orientation of the pattern was determined and used as essential feedback aiming to improve the template preparation. This led to the production of the first 300-400 μm thick device quality OPGaP. Efforts to suppress the parasitic nucleation during growths with longer duration or to achieve thicker layers by a 2 step growth process were also made. The main challenge with the newer candidate, OPZnSe, was to establish suitable regimes for hydrothermal growth on plain (001) ZnSe seeds grown by chemical vapor deposition. Two different temperature ranges, 330-350 °C and 290-330 °C, were investigated. The mineralized concentration was also manipulated to accelerate the growth in (111) direction and, thus, to improve the growth in (001) direction. The next material in the line is GaN. The traditional HVPE approach will be combined with a growth at low reactor pressure. Growths will be performed in the next sequence: growth on thin GaN layers grown by MOCVD on sapphire wafers, growth on half-patterned GaN templates with different orientations and, finally, growth on OPGaN templates.

  18. Predicting X-ray absorption spectra of semiconducting polymers for electronic structure and morphology characterization

    NASA Astrophysics Data System (ADS)

    Su, Gregory; Patel, Shrayesh; Pemmaraju, C. Das; Kramer, Edward; Prendergast, David; Chabinyc, Michael

    2015-03-01

    Core-level X-ray absorption spectroscopy (XAS) reveals important information on the electronic structure of materials and plays a key role in morphology characterization. Semiconducting polymers are the active component in many organic electronics. Their electronic properties are critically linked to device performance, and a proper understanding of semiconducting polymer XAS is crucial. Techniques such as resonant X-ray scattering rely on core-level transitions to gain materials contrast and probe orientational order. However, it is difficult to identify these transitions based on experiments alone, and complementary simulations are required. We show that first-principles calculations can capture the essential features of experimental XAS of semiconducting polymers, and provide insight into which molecular model, such as oligomers or periodic boundary conditions, are best suited for XAS calculations. Simulated XAS can reveal contributions from individual atoms and be used to visualize molecular orbitals. This allows for improved characterization of molecular orientation and scattering analysis. These predictions lay the groundwork for understanding how chemical makeup is linked to electronic structure, and to properly utilize experiments to characterize semiconducting polymers.

  19. Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

    PubMed

    Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

    2014-12-10

    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

  20. Growth of single crystals of organic salts with large second-order optical nonlinearities by solution processes for devices

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1995-01-01

    Data obtained from the electric field induced second harmonic generation (EFISH) and Kurtz Powder Methods will be provided to MSFC for further refinement of their method. A theoretical model for predicting the second-order nonlinearities of organic salts is being worked on. Another task is the synthesis of a number of salts with various counterions. Several salts with promising SHG activities and new salts will be tested for the presence of two crystalline forms. The materials will be recrystallized from dry and wet solvents and compared for SHG efficiency. Salts that have a high SHG efficiency and no tendency to form hydrates will be documented. The synthesis of these materials are included in this report. A third task involves method to aid in the growth of large, high quality single crystals by solution processes. These crystals will be characterized for their applicability in the fabrication of devices that will be incorporated into optical computers in future programs. Single crystals of optimum quality may be obtained by crystal growth in low-gravity. The final task is the design of a temperature lowering single crystal growth apparatus for ground based work. At least one prototype will be built.

  1. Nonlinear Excitation of Acoustic Modes by Large Amplitude Alfvén waves in the Large Plasma Device (LAPD)

    NASA Astrophysics Data System (ADS)

    Dorfman, S. E.; Carter, T. A.; Pribyl, P.; Tripathi, S.; Van Compernolle, B.; Vincena, S. T.; Sydora, R. D.

    2013-12-01

    Alfvén waves, a fundamental mode of magnetized plasmas, are ubiquitous in space plasmas. While the linear behavior of these waves has been extensively studied [1], non-linear effects are important in many real systems, including the solar corona and solar wind. In particular, a parametric decay process in which a large amplitude Alfvén wave decays into an ion acoustic wave and backward propagating Alfvén wave may play an important role in the coronal heating problem. Specifically, the decay of large-amplitude Alfvén waves propagating outward from the photosphere could lead to heating of the corona by the daughter ion acoustic modes [2]. As direct observational evidence of parametric decay is limited [3], laboratory experiments may play an important role in validating simple theoretical predictions and aiding in the interpretation of space measurements. Recent counter-propagating Alfvén wave experiments in the Large Plasma Device (LAPD) have recorded the first laboratory observation of the Alfvén-acoustic mode coupling at the heart of this parametric decay instability [4]. A resonance in the beat wave response produced by the two launched Alfvén waves is observed and is identified as a damped ion acoustic mode based on the measured dispersion relation. Other properties of the interaction including the spatial profile of the beat mode and response amplitude are also consistent with theoretical predictions for a three-wave interaction driven by a nonlinear ponderomotive force. Strong damping observed after the pump Alfvén waves are turned off is under investigation; a novel ion acoustic wave launcher is under development to launch the mode directly for damping studies. New experiments also aim to identify decay instabilities from a single large-amplitude Alfvén wave. In conjunction with these experiments, gyrokinetic simulation efforts are underway to scope out the relevant parameter space. [1] W. Gekelman, et. al., Phys. Plasmas 18, 055501 (2011). [2] F

  2. Rapid Single-Stage Separation of Micrometer-Long and High-Purity Semiconducting Carbon Nanotubes by Gel Filtration

    NASA Astrophysics Data System (ADS)

    Thendie, Boanerges; Miyata, Yasumitsu; Kitaura, Ryo; Miyauchi, Yuhei; Matsuda, Kazunari; Shinohara, Hisanori

    2013-06-01

    We demonstrate the separation of high-purity, long semiconducting single-wall carbon nanotubes (s-SWCNTs) by single-stage gel filtration. Semiconducting SWCNTs are preferentially adsorbed on an allyl dextran-based gel column and then eluted with surfactant solution at a rate that depends on nanotube length as well as electronic type of nanotubes. These differences allow the separation of length-sorted and purity-enhanced s-SWCNTs by fractionated collection of the eluate, which provides the desired nanotubes for electronic device applications.

  3. Organic Nonlinear Optical Materials and Devices Symposium Held in San Francisco, California on 6-9 April 1999. Volume 561

    DTIC Science & Technology

    electroluminescent materials and devices for displays. The symposium highlighted developments in materials chemistry and physics relevant to such devices and struck a balance between basic science and technology.

  4. Suppression of Nonlinear Interactions in Resonant Macroscopic Quantum Devices: The Example of the Solid-State Ring Laser Gyroscope

    SciTech Connect

    Schwartz, Sylvain; Feugnet, Gilles; Pocholle, Jean-Paul; Gutty, Francois; Bouyer, Philippe

    2008-05-09

    We report fine-tuning of nonlinear interactions in a solid-state ring laser gyroscope by vibrating the gain medium along the cavity axis. We demonstrate both experimentally and theoretically that nonlinear interactions vanish for some values of the vibration parameters, leading to quasi-ideal rotation sensing. We eventually point out that our conclusions can be mapped onto other subfields of physics such as ring-shaped superfluid configurations, where nonlinear interactions could be tuned by using Feshbach resonance.

  5. Metallic and semiconducting nanoparticles in LCs

    NASA Astrophysics Data System (ADS)

    Sharma, Anshul; Urbanski, Martin; Mori, Taizo; Kitzerow, Heinz-S.; Hegmann, Torsten

    This chapter provides an overview of recent advances in nanoparticleliquid crystal dispersions with a particular focus on bulk versus surface effects. Surface effects will include the role of surface functionalization of metal and semiconducting nanoparticles as well as interfacial effects, alignment and anchoring in thin liquid crystal films related to nanoparticle segregation. We will also try to provide a practical guide for experimental work on nanoparticle-liquid crystal dispersions, including tips and best practices for preparing dispersions, detecting and preventing inhomogeneities as well as Dos and Don'ts for handling samples and filling test cells for electrooptic, spectroscopic, and other experiments critical for research in this area.

  6. Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

    NASA Astrophysics Data System (ADS)

    Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

    2016-12-01

    We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

  7. Label-free immunodetection with CMOS-compatible semiconducting nanowires.

    PubMed

    Stern, Eric; Klemic, James F; Routenberg, David A; Wyrembak, Pauline N; Turner-Evans, Daniel B; Hamilton, Andrew D; LaVan, David A; Fahmy, Tarek M; Reed, Mark A

    2007-02-01

    Semiconducting nanowires have the potential to function as highly sensitive and selective sensors for the label-free detection of low concentrations of pathogenic microorganisms. Successful solution-phase nanowire sensing has been demonstrated for ions, small molecules, proteins, DNA and viruses; however, 'bottom-up' nanowires (or similarly configured carbon nanotubes) used for these demonstrations require hybrid fabrication schemes, which result in severe integration issues that have hindered widespread application. Alternative 'top-down' fabrication methods of nanowire-like devices produce disappointing performance because of process-induced material and device degradation. Here we report an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrate the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response. This approach eliminates the need for hybrid methods and enables system-scale integration of these sensors with signal processing and information systems. Additionally, the ability to monitor antibody binding and sense the cellular immune response in real time with readily available technology should facilitate widespread diagnostic applications.

  8. High-performance semiconducting nanotube inks: progress and prospects.

    PubMed

    Rouhi, Nima; Jain, Dheeraj; Burke, Peter John

    2011-11-22

    While the potential for high mobility printed semiconducting nanotube inks has been clear for over a decade, a myriad of scientific and technological issues has prevented commercialization and practical use. One of the most challenging scientific problems has been to understand the relationship between the pristine, individual nanotube mobility (known to be in the 10,000 cm(2)/V·s range) and the as-deposited random network mobility (recently demonstrated in the 100 cm(2)/V·s range). An additional significant scientific hurdle has been to understand, manage, and ultimately eliminate the effects of metallic nanotubes on the network performance, specifically the on/off ratio. Additional scientific progress is important in understanding the dependence of nanotube length, diameter, and density on device performance. Finally, the development of ink formulations that are of practical use in manufacturing is of paramount importance, especially with regard to drying time and uniformity, and ultimately, the issue of scalability and cost must be addressed. Many of these issues have recently been investigated from a phenomenological point of view, and a comprehensive understanding is beginning to emerge. In this paper, we present an overview of solution-based printed carbon nanotube devices and discuss long-term technology prospects. While significant technical challenges still remain, it is clear that the prospects for the use of nanotube ink in a myriad of systems is feasible given their unmatched mobility and compatibility with heterogeneous integration into a variety of applications in printed and flexible electronics.

  9. Abnormal hopping conduction in semiconducting polycrystalline graphene

    NASA Astrophysics Data System (ADS)

    Park, Jeongho; Mitchel, William C.; Elhamri, Said; Grazulis, Larry; Altfeder, Igor

    2013-07-01

    We report the observation of an abnormal carrier transport phenomenon in polycrystalline semiconducting graphene grown by solid carbon source molecular beam epitaxy. At the lowest temperatures in samples with small grain size, the conduction does not obey the two-dimensional Mott-type variable-range hopping (VRH) conduction often reported in semiconducting graphene. The hopping exponent p is found to deviate from the 1/3 value expected for Mott VRH with several samples exhibiting a p=2/5 dependence. We also show that the maximum energy difference between hopping sites is larger than the activation energy for nearest-neighbor hopping, violating the assumptions of the Mott model. The 2/5 dependence more closely agrees with the quasi-one-dimensional VRH model proposed by Fogler, Teber, and Shklovskii (FTS). In the FTS model, conduction occurs by tunneling between neighboring metallic wires. We suggest that metallic edge states and conductive grain boundaries play the role of the metallic wires in the FTS model.

  10. Tunable surface plasmon devices

    DOEpatents

    Shaner, Eric A.; Wasserman, Daniel

    2011-08-30

    A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

  11. ZnO-Decorated Carbon Nanotube Hybrids as Fillers Leading to Reversible Nonlinear I-V Behavior of Polymer Composites for Device Protection.

    PubMed

    Yang, Wenhu; Wang, Jian; Luo, Suibin; Yu, Shuhui; Huang, Haitao; Sun, Rong; Wong, Ching-Ping

    2016-12-28

    Overvoltage protection is becoming increasingly important because of miniaturization and multifunctionality of electronic devices. Flexible, easily processable materials with nonlinear and reversible I-V behavior are highly desired. In this study, hybrid nanoparticles of ZnO-decorated carbon nanotubes (CNT-ZnO) were synthesized via a sol-gel hydrothermal process employed in an epoxy matrix to prepare composites. Microstructure analysis demonstrated that ZnO nanoparticles were well-bonded to the surface of CNT. The CNT-ZnO/epoxy composites exhibited nonlinear I-V behavior under increasingly applied voltage with a nonlinear coefficient of 5.01 (10 wt % filler loading). More importantly, the composites possessed excellent reversibility from dielectric to conductor and vise versa in the recycling of increase and decrease of applied electric field, in contrast to the poor recoverability of pure CNT-filled epoxy. The mechanism of the nonlinear I-V behavior and reversibility was investigated and discussed. A simple circuit was fabricated, which verified well the protection function of the CNT-ZnO/polymer composites.

  12. NLO 󈨞. Nonlinear Optics: Materials, Phenomena and Devices Digest. Internation Meeting on Nonlinear Optics (1st) Held in Kauai, Hawaii on 16-20 July 1990

    DTIC Science & Technology

    1991-03-13

    The behavior of a system whose final state depends so sensitively on the system’s precise initial state that the behavior is in effect unpredictable...187 xi WP7 Scaling Behavior of Optical Bistability in Nonlinear Medium, Y.H. Kao and C.S. Wang 188 WP8 Exploration of Optical Propagation in a...217 Session: SC Lasers & Interfaces WP24 Anisotropy of Second Harmonic Generation from Magnetized Surfaces, R. Pan, H.D. Wei, and T.J. Watson Yang 219

  13. Intrinsically stretchable and healable semiconducting polymer for organic transistors

    NASA Astrophysics Data System (ADS)

    Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

    2016-11-01

    Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

  14. Intrinsically stretchable and healable semiconducting polymer for organic transistors.

    PubMed

    Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

    2016-11-17

    Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

  15. Response functions of semiconducting lithium indium diselenide

    NASA Astrophysics Data System (ADS)

    Lukosi, Eric; Chvala, Ondrej; Stowe, Ashley

    2016-06-01

    This paper presents the results of a computational investigation that determined the gamma-ray and neutron response functions of a new semiconducting material, 6LiInSe2, which is very sensitive to thermal neutrons. Both MCNP6 simulations and custom post-processing/simulation techniques were used to determine various detection properties of LISe. The computational study included consideration of energetic electron escape, the contribution from the activation of 115In and subsequent decay of 116In, triton and alpha particle escape from the 6Li reaction pathway, and the effect of incomplete charge collection when detecting neutrons via the 6Li reaction pathway. The result of neutron detection with incomplete charge collection was compared to experimental results and showed general agreement, where holes exhibit a lower mobility-lifetime product than electrons, as expected for compound semiconductors.

  16. Optical antenna effect in semiconducting nanowires.

    PubMed

    Chen, G; Wu, Jian; Lu, Qiujie; Gutierrez, H R; Xiong, Qihua; Pellen, M E; Petko, J S; Werner, D H; Eklund, P C

    2008-05-01

    We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire. The antenna effects were probed in individual NWs whose diameters are in the range 40 < d < 300 nm. The data and our calculations show that the nature of the backscattered light is critically dependent on the interplay between a photon confinement effect and bulk Raman scattering. At small diameter, d < 65 nm, the NWs are found to act like a nearly perfect dipole antenna and the bulk Raman selection rules are masked leading to a polarized scattering intensity function I R approximately cos4 theta. Underscoring the importance of this work is the realization that a fundamental understanding of the "optical antenna effect" in semiconducting NWs is essential to the analysis of all electro-optic effects in small diameter filaments.

  17. Doping Scheme of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Saini, Subhash (Technical Monitor)

    1998-01-01

    Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

  18. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates.

    PubMed

    Wang, Wei; Kim, Kang Lib; Cho, Suk Man; Lee, Ju Han; Park, Cheolmin

    2016-12-14

    Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

  19. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

    PubMed Central

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming

    2016-01-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3− precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance. PMID:27025784

  20. Enhanced x-ray detection sensitivity in semiconducting polymer diodes containing metallic nanoparticles

    NASA Astrophysics Data System (ADS)

    Mills, Christopher A.; Al-Otaibi, Hulayel; Intaniwet, Akarin; Shkunov, Maxim; Pani, Silvia; Keddie, Joseph L.; Sellin, Paul J.

    2013-07-01

    Semiconducting polymer X-radiation detectors are a completely new family of low-cost radiation detectors with potential application as beam monitors or dosimeters. These detectors are easy to process, mechanically flexible, relatively inexpensive, and able to cover large areas. However, their x-ray photocurrents are typically low as, being composed of elements of low atomic number (Z), they attenuate x-rays weakly. Here, the addition of high-Z nanoparticles is used to increase the x-ray attenuation without sacrificing the attractive properties of the host polymer. Two types of nanoparticles (NPs) are compared: metallic tantalum and electrically insulating bismuth oxide. The detection sensitivity of 5 µm thick semiconducting poly([9,9-dioctylfluorenyl-2,7-diyl]-co-bithiophene) diodes containing tantalum NPs is four times greater than that for the analogous NP-free devices; it is approximately double that of diodes containing an equal volume of bismuth oxide NPs. The x-ray induced photocurrent output of the diodes increases with an increased concentration of NPs. However, contrary to the results of theoretical x-ray attenuation calculations, the experimental current output is higher for the lower-Z tantalum diodes than the bismuth oxide diodes, at the same concentration of NP loading. This result is likely due to the higher tantalum NP electrical conductivity, which increases charge transport through the semiconducting polymer, leading to increased diode conductivity.

  1. Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

    SciTech Connect

    Kang, Youngho; Song, Hochul; Han, Seungwu; Nahm, Ho-Hyun; Jeon, Sang Ho; Cho, Youngmi

    2014-03-01

    To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO{sub 4} is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO{sub 4} with the optical gap of 3.6 eV, the amorphous InGaZnO{sub 4} has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides.

  2. Two-dminensional exciton states in monolayer semiconducting phosphorus alotropes

    NASA Astrophysics Data System (ADS)

    Rocha, Alexandre R.; Villegas, Cesar E. P.

    During the last decade, novel two-dimensional (2D) semiconducting materials have been synthesized and characterised. As a result, there have been several theoretical and experimental proposals to incorporate 2D materials for designing next generation electronic and optoelectronics devices. In particular, it has been demonstrated that light absorption in phosphorus-based monolayers can span the whole visible spectrum, suggesting they could be used for optolectronic applications. A key ingredient for optolectronic applications is the presence of excitons and their subsequent diffusion along a donor material. This is influenced by the character of the different excitations taking place, as well as, the exciton binding energy. Therefore, In this work we use accurate many-body corrected density functional theory by means of GW-BSE methodology to elucidate the most important optical transitions, exciton energy spectrum as well as exciton extension in different types of phosphorene materials. In addition, we solve the Schrodinger equation for different 2D screened potentials and estimate the 2D exciton energy levels and radius extension. Finally, in order to assess further studies based on these systems, we provide a simple analityc expression for estimating 2D exciton energy levels. Research funded by FAPESP-Brazil.

  3. High temperature photoelectron emission and surface photovoltage in semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Williams, G. T.; Cooil, S. P.; Roberts, O. R.; Evans, S.; Langstaff, D. P.; Evans, D. A.

    2014-08-01

    A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

  4. Development of high-performing semiconducting polymers for organic electrochemical transistors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Nielsen, Christian

    2016-11-01

    The organic electrochemical transistor (OECT), capable of amplifying small electrical signals in an aqueous environment, is an ideal device to utilize in organic bioelectronic applications involving for example neural interfacing and diagnostics. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene)-based suspensions such as PEDOT:PSS and are therefore operated in depletion mode giving rise to devices that are permanently on with non-optimal operational voltage. With the aim to develop and utilize efficient accumulation mode OECT devices, we discuss here our recent results regarding the design, synthesis and performance of novel intrinsic semiconducting polymers. Covering key aspects such as ion and charge transport in the bulk semiconductor and operational voltage and stability of the materials and devices, we have elucidated important structure-property relationships. We illustrate the improvements this approach has afforded in the development of high performance accumulation mode OECT materials.

  5. Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

    PubMed Central

    Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

    2009-01-01

    A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

  6. Tunable Band Gaps and Excitons in Doped Semiconducting Carbon Nanotubes Made Possible by Acoustic Plasmons

    NASA Astrophysics Data System (ADS)

    Spataru, Catalin D.; Léonard, François

    2010-04-01

    Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, band gaps and exciton binding energies can be dramatically reduced upon experimentally relevant doping, and can be tuned gradually over a broad range of energies in contrast with higher dimensional systems. The latter feature is made possible by a novel mechanism involving strong dynamical screening effects mediated by acoustic plasmons.

  7. Adatom-induced local reconstructions in zigzag silicene nanoribbons: Spin semiconducting properties and large spin thermopowers

    NASA Astrophysics Data System (ADS)

    Yang, X. F.; Zou, X. L.; Kuang, Y. W.; Shao, Z. G.; Zhang, J.; Hong, X. K.; Zhang, D. B.; Feng, J. F.; Chen, X. S.; Liu, Y. S.

    2017-01-01

    Using first-principles methods, we have investigated magnetic properties and thermospin effects of zigzag silicene nanoribbons (ZSiNRs) absorbed by a single Si atom. After a relaxation, a steady dumbbell-like structure is formed, which induces a weaker antiferromagnetic (AFM) coupling between two zigzag edges. Therefore, a band gap is opened, meanwhile the adsorbed ZSiNRs show a spin semiconducting property. A large spin thermopower and weak charge thermopower in adsorbed ZSiNR-based devices can be simultaneously achieved, which is attributed to a nearly perfect mirror symmetry of spin-up and spin-down transmission spectra relative to the Fermi level.

  8. Time-Domain Finite Element Analysis of Nonlinear Breakdown Problems in High-Power-Microwave Devices and Systems

    DTIC Science & Technology

    2015-12-24

    radiation , the electrons in the HPM device are accelerated by the high-intensity electromagnetic fields. The motion of electrons produces impact on...The radiation and shielding of the electromagnetic fields by the oscillating plasma can be observed in Figure 16(c), where the two plots are...DEVICES AND SYSTEMS Su Yan and Jian-Ming Jin University of Illinois Center for Computational Electromagnetics Department of Electrical and Computer

  9. Novel metastable metallic and semiconducting germaniums.

    PubMed

    Selli, Daniele; Baburin, Igor A; Martoňák, Roman; Leoni, Stefano

    2013-01-01

    Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues.

  10. Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

    DOEpatents

    Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

    2013-11-05

    In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating a first low frequency acoustic wave within the borehole, wherein the first low frequency acoustic wave induces a linear and a nonlinear response in one or more features in the material that are substantially perpendicular to a radius of the borehole; directing a first sequence of high frequency pulses in a direction perpendicularly with respect to the longitudinal axis of the borehole into the material contemporaneously with the first acoustic wave; and receiving one or more second high frequency pulses at one or more receivers positionable in the borehole produced by an interaction between the first sequence of high frequency pulses and the one or more features undergoing linear and nonlinear elastic distortion due to the first low frequency acoustic wave to investigate the material surrounding the borehole.

  11. Study on generation mechanisms of second-order nonlinear signals in surface acoustic wave devices and their suppression

    NASA Astrophysics Data System (ADS)

    Nakagawa, Ryo; Kyoya, Haruki; Shimizu, Hiroshi; Kihara, Takashi; Hashimoto, Ken-ya

    2015-07-01

    In this study, we examine the generation mechanisms of the second-order nonlinear signals in surface acoustic wave resonators/duplexers fabricated on a 42°YX-LiTaO3 substrate. It is shown that the crystal asymmetry of the substrate can generate the second-order nonlinear signals. The following two mechanisms mainly contribute to their generation: (a) self-mixing of the electrostatic field and (b) mixing of the electrostatic field with the strain field associated with laterally propagating modes. Both of them occur at the gaps between the electrode tip and the dummy electrode. In addition, an interdigital transducer design that cancels this asymmetry is proposed. The design is applied to a one-port resonator and a duplexer, and the effectiveness of this technique is demonstrated.

  12. Nonlinear Noise in SiGe Bipolar Devices and its Impact on Radio-Frequency Amplifier Phase Noise

    NASA Astrophysics Data System (ADS)

    Gribaldo, S.; Cibiel, G.; Llopis, O.; Graffeuil, J.

    2005-08-01

    The nonlinear behavior of different microwave SiGe bipolar transistors has been studied and models have been extracted. The phase noise of an amplifier is computed, taking into account the microwave additive noise floor and the up-converted 1/f noise. The simulation technique is a combination of different approaches available in a commercial CAD software. Theoretical results are then compared to the experiment.

  13. Structure and nonlinear optical properties of (E)-1-(4-aminophenyl)-3-(3-chlorophenyl) prop-2-en-1-one: A promising new D-π-A-π-D type chalcone derivative crystal for nonlinear optical devices

    NASA Astrophysics Data System (ADS)

    Ekbote, Anusha; Patil, P. S.; Maidur, Shivaraj R.; Chia, Tze Shyang; Quah, Ching Kheng

    2017-02-01

    In this paper, we present the structure and nonlinear optical (NLO) studies of a D-π-A-π-D type chalcone derivative, (E)-1-(4-aminophenyl)-3-(3-chlorophenyl) prop-2-en-1-one (abbreviated as 3CAMC). The compound was synthesized by Claisen-Schmidt condensation and single crystals were grown by slow evaporation solution growth technique. The structure was confirmed by FT-IR, 1H NMR and single-crystal X-ray diffraction techniques. The 3CAMC crystal is crystallized in the monoclinic crystal system with non-centrosymmetric space group P21 with the unit cell parameters a = 8.0013 (19) Å, b = 4.6630 (11) Å, c = 16.883 (4) Å, β = 95.568 (3)° and Z = 2. The optical absorption spectrum was recorded using UV-Vis-NIR spectrophotometer and the band gap was calculated. The title crystal has a direct band gap of 2.96 eV. TGA/DTA thermal analysis revealed that the crystal has a good thermal stability. The second harmonic generation (SHG) efficiency was investigated using the modified Kurtz-Perry powder test at 1064 nm wavelength with nanosecond (ns) laser pulses. The SHG efficiency is found to be 7 times higher than the well-studied urea. The third-order nonlinear optical properties of 3CAMC at different concentrations were investigated in DMF using Z-scan technique with continuous wave (CW) DPSS laser at 532 nm wavelength. The molecule shows a strong two-photon absorption (2PA) and significant negative nonlinear refraction characteristic (self-defocusing) in the CW regime. Further, we observed the optical limiting behavior in the compound, and evaluated the one-photon and two-photon figures of merit. The encouraging results of NLO studies suggest that the 3CAMC crystal is a promising material for photonics devices, optical switches, and optical power limiting applications.

  14. Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

    NASA Technical Reports Server (NTRS)

    Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

    2015-01-01

    A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

  15. Flow induced/ refined solution crystallization of a semiconducting polymer

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc A.

    Organic photovoltaics, a new generation of solar cells, has gained scientific and economic interests due to the ability of solution-processing and potentially low-cost power production. Though, the low power conversion efficiency of organic/ plastic solar cells is one of the most pertinent challenges that has appealed to research communities from many different fields including materials science and engineering, electrical engineering, chemical engineering, physics and chemistry. This thesis focuses on investigating and controlling the morphology of a semi-conducting, semi-crystalline polymer formed under shear-flow. Molecular structures and processing techniques are critical factors that significantly affect the morphology formation in the plastic solar cells, thus influencing device performance. In this study, flow-induced solution crystallization of poly (3-hexylthiophene) (P3HT) in a poor solvent, 2-ethylnapthalene (2-EN) was utilized to make a paint-like, structural liquid. The polymer crystals observed in this structured paint are micrometers long, nanometers in cross section and have a structure similar to that formed under quiescent conditions. There is pi-pi stacking order along the fibril axis, while polymer chain folding occurs along the fibril width and the order of the side-chain stacking is along fibril height. It was revealed that shear-flow not only induces P3HT crystallization from solution, but also refines and perfects the P3HT crystals. Thus, a general strategy to refine the semiconducting polymer crystals from solution under shear-flow has been developed and employed by simply tuning the processing (shearing) conditions with respect to the dissolution temperature of P3HT in 2-EN. The experimental results demonstrated that shear removes defects and allows more perfect crystals to be formed. There is no glass transition temperature observed in the crystals formed using the flow-induced crystallization indicating a significantly different

  16. Pi-Stack Engineering of Semiconducting Perylene Tetracarboxylic Derivatives

    NASA Astrophysics Data System (ADS)

    Xue, Chenming

    D crystalline intra-layer order. Chapter 4, PDI pi-stacking order has been engineered in the crystalline phase. By introducing two structuring factors, a series of crystalline PDIs with finely tunable PDI pi-stacking order was obtained. The crystalline PDIs with exceptionally red-shifted lambda max were obtained. Several PDIs possess lambdamax values greater than any literature-reported ones. These materials can be excellent candidates in solar cell devices. In Chapter 5, new chiral main-chain PDI containing polymers were synthesized. These polymers can form intramolecular helical pi-stacks in diluted solutions. In Chapter 6, a novel synthetic route leading to unsymmetrical perylene tetracarboxylic derivatives has been developed. Based on this synthetic method, more perylene tetracarboxylic derivatives can be generated. In my research in this thesis, not only synthesis is an important part because it provides novel materials, but the characterization is critical as well. Infrared spectroscopy, Ultra-violet, fluorescence, differential scanning calorimetry, circular dichroism, polarized light microscopy, gel permeation chromatography, X-ray diffraction including both small angle and wide angle have been used. Additionally, molecular simulation is also very useful in design and obtaining details in molecular packing. Overall, the achievements in this research contribute a considerable advance in the field of generating semiconducting perylene tetracarboxylic derivatives which have versatile potential applications such as in solar cell devices, organic field effect transistors and light emitting diodes.

  17. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  18. Optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sperling, Leslie H.; Murphy, Clarence J.; Rosen, Warren A.; Jain, Himanshu

    1990-07-01

    This invention relates to acrylic polymers and more specifically to polyacrylamides and polyacrylates such as poly(2-((N-2-methyl-5-nitrophenylamino) ethyl acrylate)) and poly((N-2-methyl-4-nitrophenyl)acrylamide). These acrylic polymers are particularly useful as nonlinear optical components in various electrical devices for processing optical signals including interferometors, optical switches, optical amplifiers, generators, computational devices and the like.

  19. Optimization of thermoelectric performance in semiconducting polymers for understanding charge transport and flexible thermoelectric applications

    NASA Astrophysics Data System (ADS)

    Glaudell, Anne; Chabinyc, Michael

    2014-03-01

    Organic electronic materials have been widely considered for a variety of energy conversion applications, from photovoltaics to LEDs. Only very recently have organic materials been considered for thermoelectric applications - converting between temperature gradients and electrical potential. The intrinsic disorder in semiconducting polymers leads to an inherently low thermal conductivity, a key parameter in thermoelectric performance. The ability to solution deposit on flexible substrates opens up niche applications including personal cooling and conformal devices. Here work is presented on the electrical conductivity and thermopower of thin film semiconducting polymers, including P3HT and PBTTT-C14. Thermoelectric properties are explored over a wide range of conductivities, from nearly insulating to beyond 100 S/cm, enabled by employing different doping mechanisms, including molecular charge-transfer doping with F4TCNQ and vapor doping with a fluoroalkyl trichlorosilane (FTS). Temperature-dependent measurements suggest competing charge transport mechanisms, likely due to the mixed ordered/disordered character of these polymers. These results show promise for organic materials for thermoelectric applications, and recent results on thin film devices will also be presented.

  20. Third order optical non-linear (Z-scan), birefringence, photoluminescence, mechanical and etching studies on melaminium levulinate monohydrate (MLM) single crystal for optical device applications

    NASA Astrophysics Data System (ADS)

    Sivakumar, N.; Anbalagan, G.

    2016-10-01

    Z-scan studies on the grown crystal was investigated by diode-pumped Nd; YAG laser. Nonlinear refractive index (n2) and third-order nonlinear optical susceptibility (χ3) values of MLM were found to be -1.0 × 10-8 cm2/W and 1.36 × 10-6 esu respectively. Powder X-ray diffraction analysis depicted that the crystal belongs to monoclinic system with space group P21/c. Birefringence study revealed the optical dispersion behavior of MLM crystal. Linear refractive index on (10-1) plane was measured by prism coupling technique and was estimated to be 1.4705. Hardness study was carried out along three different planes which exhibit hardness anisotropy of 41.11%. Meyer's index values of the grown crystal for the (10-1), (010) and (111) planes were found to be 2.39, 2.61 and 2.04 respectively. Etching studies on the prominent (10-1) growth plane was explained by two dimensional layer growth mechanisms. Photoluminescence study was performed on MLM crystal to explore its efficacy towards optical device fabrications.

  1. Device and method for imaging of non-linear and linear properties of formations surrounding a borehole

    DOEpatents

    Johnson, Paul A; Tencate, James A; Le Bas, Pierre-Yves; Guyer, Robert; Vu, Cung Khac; Skelt, Christopher

    2013-10-08

    In some aspects of the disclosure, a method and an apparatus is disclosed for investigating material surrounding the borehole. The method includes generating within a borehole an intermittent low frequency vibration that propagates as a tube wave longitudinally to the borehole and induces a nonlinear response in one or more features in the material that are substantially perpendicular to a longitudinal axis of the borehole; generating within the borehole a sequence of high frequency pulses directed such that they travel longitudinally to the borehole within the surrounding material; and receiving, at one or more receivers positionable in the borehole, a signal that includes components from the low frequency vibration and the sequence of high frequency pulses during intermittent generation of the low frequency vibration, to investigate the material surrounding the borehole.

  2. Homo and heteroepitaxial growth and study of orientation-patterned GaP for nonlinear frequency conversion devices

    NASA Astrophysics Data System (ADS)

    Tassev, V. L.; Vangala, S.; Peterson, R.; Kimani, M.; Snure, M.; Markov, I.

    2016-03-01

    Frequency conversion in orientation-patterned quasi-phase matched materials is a leading approach for generating tunable mid- and long-wave coherent IR radiation for a wide variety of applications. A number of nonlinear optical materials are currently under intensive investigation. Due to their unique properties, chiefly wide IR transparency and high nonlinear susceptibility, GaAs and GaP are among the most promising. Compared to GaAs, GaP has the advantage of having higher thermal conductivity and significantly lower 2PA in the convenient pumping range of 1- 1.7 μm. HVPE growth of OPGaP, however, has encountered certain challenges: low quality and high price of commercially available GaP wafers; and strong parasitic nucleation during HVPE growth that reduces growth rate and aggravates layer quality, often leading to pattern overgrowth. Lessons learned from growing OPGaAs were not entirely helpful, leaving us to alternative solutions for both homoepitaxial growth and template preparation. We report repeatable one-step HVPE growth of up to 400 μm thick OPGaP with excellent domain fidelity deposited for first time on OPGaAs templates. The templates were prepared by wafer fusion bonding or MBE assisted polarity inversion technique. A close to equilibrium growth at such a large lattice mismatch (-3.6%) is itself noteworthy, especially when previously reported attempts (growth of OPZnSe on OPGaAs templates) at much smaller mismatch (+0.3%) have produced limited results. Combining the advantages of the two most promising materials, GaAs and GaP, is a solution that will accelerate the development of high power, tunable laser sources for the mid- and long-wave IR, and THz region.

  3. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

    PubMed Central

    2016-01-01

    The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous environment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure–property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, electrochromic properties, operational voltage, and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT-based devices, and show stability under aqueous operation without the need for formulation additives and cross-linkers. PMID:27444189

  4. Semiconducting monolayer materials as a tunable platform for excitonic solar cells.

    PubMed

    Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C

    2012-11-27

    The recent advent of two-dimensional monolayer materials with tunable optical properties and high carrier mobility offers renewed opportunities for efficient, ultrathin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN and graphene (CBN) combined with commonly used acceptors such as PCBM fullerene or semiconducting carbon nanotubes can provide excitonic solar cells with tunable absorber gap, donor-acceptor interface band alignment, and power conversion efficiency, as well as novel device architectures. For the case of CBN-PCBM devices, we predict power conversion efficiency limits in the 10-20% range depending on the CBN monolayer structure. Our results demonstrate the possibility of using monolayer materials in tunable, efficient, ultrathin solar cells in which unexplored exciton and carrier transport regimes are at play.

  5. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    PubMed Central

    Comfort, Everett; Lee, Ji Ung

    2016-01-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range. PMID:27339272

  6. Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

    PubMed Central

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Hahm, Jong-in

    2015-01-01

    We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO2, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs. PMID:26549887

  7. Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

    SciTech Connect

    Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing; Milchak, Marissa; Hahm, Jong-in

    2015-10-12

    We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO{sub 2}, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of the technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.

  8. Semiconducting glasses: A new class of thermoelectric materials?

    SciTech Connect

    Goncalves, A.P.; Vaney, J.B.; Lenoir, B.; Piarristeguy, A.; Pradel, A.; Monnier, J.; Ochin, P.; Godart, C.

    2012-09-15

    The deeper understanding of the factors that affect the dimensionless figure of merit, ZT, and the use of new synthetic methods has recently led to the development of novel systems with improved thermoelectric performances. Albeit up to now with ZT values lower than the conventional bulk materials, semiconducting glasses have also emerged as a new family of potential thermoelectric materials. This paper reviews the latest advances on semiconducting glasses for thermoelectric applications. Key examples of tellurium-based glasses, with high Seebeck coefficients, very low thermal conductivities and tunable electrical conductivities, are presented. ZT values as high as 0.2 were obtained at room temperature for several tellurium-based glasses with high copper concentrations, confirming chalcogenide semiconducting glasses as good candidates for high-performance thermoelectric materials. However, the temperature stability and electrical conductivity of the reported glasses are still not good enough for practical applications and further studies are still needed to enhance them. - Graphical abstract: Power factor as a function of the temperature for the Cu{sub 27.5}Ge{sub 2.5}Te{sub 70} and Cu{sub 30}As{sub 15}Te{sub 55} seniconducting glasses. Highlights: Black-Right-Pointing-Pointer A review of semiconducting glasses for thermoelectrics applications is presented. Black-Right-Pointing-Pointer The studied semiconducting glasses present very low thermal conductivities. Black-Right-Pointing-Pointer Composition can tune electrical conductivity and Seebeck coefficient. Black-Right-Pointing-Pointer ZT=0.2 is obtained at 300 K for different semiconducting glasses.

  9. Room-temperature nonlinear transport phenomena in low-dimensional Ni-Nb-Zr-H glassy alloys and its device

    SciTech Connect

    Fukuhara, Mikio; Yoshida, Hajime

    2014-05-15

    We report the room-temperature switching and Coulomb blockade effects in three–terminal glassy alloy field effect transistor (GAFET), using the millimeter sized glassy alloy. By applying dc and ac voltages to a gate electrode, GAFET can be switched from a metallic conducting state to an insulating state with Coulomb oscillation at a period of 14 μV at room temperature. The transistor showed the three-dimensional Coulomb diamond structure. The fabrication of a low-energy controllable device throws a new light on cluster electronics without wiring.

  10. Recent advances in organic semiconducting materials

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2011-10-01

    Organic semiconductors have attracted attention due to their low cost, easy fabrication, and tunable properties. Applications of organic materials in thin-film transistors, solar cells, light-emitting diodes, sensors, and many other devices have been actively explored. Recent advances in organic synthesis, material processing, and device fabrication led to significant improvements in (opto)electronic device performance. However, a number of challenges remain. These range from lack of understanding of basic physics of intermolecular interactions that determine optical and electronic properties of organic materials to difficulties in controlling film morphology and stability. In this presentation, current state of the field will be reviewed and recent results related to charge carrier and exciton dynamics in organic thin films will be presented.[4pt] In collaboration with Whitney Shepherd, Mark Kendrick, Andrew Platt, Oregon State University; Marsha Loth and John Anthony, University of Kentucky.

  11. Nonlinear diffraction in orientation-patterned semiconductors.

    PubMed

    Karpinski, Pawel; Chen, Xin; Shvedov, Vladlen; Hnatovsky, Cyril; Grisard, Arnaud; Lallier, Eric; Luther-Davies, Barry; Krolikowski, Wieslaw; Sheng, Yan

    2015-06-01

    This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinear Čerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.

  12. 5, 10-linked naphthodithiophenes as the building block for semiconducting polymers

    PubMed Central

    Osaka, Itaru; Komatsu, Koki; Koganezawa, Tomoyuki; Takimiya, Kazuo

    2014-01-01

    We present new semiconducting polymers incorporating naphtho[1, 2-b:5, 6-b′] dithiophene (NDT3) and naphtho[2, 1-b:6, 5-b′] dithiophene (NDT4), which are linked at the naphthalene positions, in the polymer backbone. It is interesting that the trend in the ordering structure and thus charge transport properties are quite different from what were observed in the isomeric polymers where the NDT3 and NDT4 cores are linked at the thiophene α-positions. In the thiophene-linked NDT system, the NDT3-based polymer (PNDT3BT) gave the better ordering in thin films and thus the high charge carrier mobility compared to the NDT4-based polymer (PNDT4BT). In the meantime, in the naphthalene-linked NDT system, the NDT4-based polymer (PNDT4iBT) provided the superior properties. Considering that PNDT4iBT has relatively low highest occupied molecular orbital (HOMO) energy level (−5.2 eV) and moderately high mobilities in the order of 10−2 cm2 V−1 s−1, the NDT4 core, when linked at the naphthalene positions, can be a good building unit for the development of high-performance semiconducting polymers for both organic field-effect transistors and photovoltaic devices. PMID:27877654

  13. 5,10-linked naphthodithiophenes as the building block for semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Osaka, Itaru; Komatsu, Koki; Koganezawa, Tomoyuki; Takimiya, Kazuo

    2014-04-01

    We present new semiconducting polymers incorporating naphtho[1, 2-b:5, 6-b‧] dithiophene (NDT3) and naphtho[2, 1-b:6, 5-b‧] dithiophene (NDT4), which are linked at the naphthalene positions, in the polymer backbone. It is interesting that the trend in the ordering structure and thus charge transport properties are quite different from what were observed in the isomeric polymers where the NDT3 and NDT4 cores are linked at the thiophene α-positions. In the thiophene-linked NDT system, the NDT3-based polymer (PNDT3BT) gave the better ordering in thin films and thus the high charge carrier mobility compared to the NDT4-based polymer (PNDT4BT). In the meantime, in the naphthalene-linked NDT system, the NDT4-based polymer (PNDT4iBT) provided the superior properties. Considering that PNDT4iBT has relatively low highest occupied molecular orbital (HOMO) energy level (-5.2 eV) and moderately high mobilities in the order of 10-2 cm2 V-1 s-1, the NDT4 core, when linked at the naphthalene positions, can be a good building unit for the development of high-performance semiconducting polymers for both organic field-effect transistors and photovoltaic devices.

  14. Thiofluorographene-hydrophilic graphene derivative with semiconducting and genosensing properties.

    PubMed

    Urbanová, Veronika; Holá, Kateřina; Bourlinos, Athanasios B; Čépe, Klára; Ambrosi, Adriano; Loo, Adeline Huiling; Pumera, Martin; Karlický, František; Otyepka, Michal; Zbořil, Radek

    2015-04-08

    We present the first example of covalent chemistry on fluorographene, enabling the attachment of -SH groups through nucleophilic substitution of fluorine in a polar solvent. The resulting thiographene-like, 2D derivative is hydrophilic with semiconducting properties and bandgap between 1 and 2 eV depending on F/SH ratio. Thiofluorographene is applied in DNA biosensing by electrochemical impedance spectroscopy.

  15. Semiconducting materials for photoelectrochemical energy conversion

    NASA Astrophysics Data System (ADS)

    Sivula, Kevin; van de Krol, Roel

    2016-02-01

    To achieve a sustainable society with an energy mix primarily based on solar energy, we need methods of storing energy from sunlight as chemical fuels. Photoelectrochemical (PEC) devices offer the promise of solar fuel production through artificial photosynthesis. Although the idea of a carbon-neutral energy economy powered by such ‘artificial leaves’ is intriguing, viable PEC energy conversion on a global scale requires the development of devices that are highly efficient, stable and simple in design. In this Review, recently developed semiconductor materials for the direct conversion of light into fuels are scrutinized with respect to their atomic constitution, electronic structure and potential for practical performance as photoelectrodes in PEC cells. The processes of light absorption, charge separation and transport, and suitable energetics for energy conversion in PEC devices are emphasized. Both the advantageous and unfavourable aspects of multinary oxides, oxynitrides, chalcogenides, classic semiconductors and carbon-based semiconductors are critically considered on the basis of their experimentally demonstrated performance and predicted properties.

  16. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  17. Implication of Fluorine Atom on Electronic Properties, Ordering Structures, and Photovoltaic Performance in Naphthobisthiadiazole-Based Semiconducting Polymers.

    PubMed

    Kawashima, Kazuaki; Fukuhara, Tomohiro; Suda, Yousuke; Suzuki, Yasuhito; Koganezawa, Tomoyuki; Yoshida, Hiroyuki; Ohkita, Hideo; Osaka, Itaru; Takimiya, Kazuo

    2016-08-17

    The development of semiconducting polymers is imperative to improve the performance of polymer-based solar cells (PSCs). In this study, new semiconducting polymers based on naphtho[1,2-c:5,6-c']bis[1,2,5]thiadiazole (NTz), PNTz4TF2 and PNTz4TF4, having 3,3'-difluoro-2,2'-bithiophene and 3,3',4,4'-tetrafluoro-2,2'-bithiophene, respectively, are designed and synthesized. These polymers possess a deeper HOMO energy level than their counterpart, PNTz4T, which results in higher open-circuit voltages in solar cells. This concequently reduces the photon energy loss that is one of the most important issues surrounding PSCs. The PNTz4TF4 cell exhibits up to 6.5% power conversion efficiency (PCE), whereas the PNTz4TF2 cell demonstrates outstanding device performance with as high as 10.5% PCE, which is quite high for PSCs. We further discuss the performances of the PSCs based on these polymers by correlating the charge generation and recombination dynamics with the polymer structure and ordering structure. We believe that the results provide new insights into the design of semiconducting polymers and that there is still much room for improvement of PSC efficiency.

  18. The Effect of the Semiconductive Screen on Space Charge Suppression in Cross-Linked Polyethylene

    NASA Astrophysics Data System (ADS)

    Li, Lin; Han, Bai; Song, Wei; Wang, Xuan; Lei, Qing-Quan

    2014-10-01

    The space charge distributions of cross-linked polyethylene (XLPE) with Borouge's Borlink™ semiconductive screen type LE0550 and LE0595 from a pulsed electro-acoustic method are obtained. The contact interface morphology at the semiconductive screen and the structure of XLPE near the interface are characterized. The dielectric spectrum and the conductivity current of XLPE with the different semiconductive electrodes are compared. The semiconductive screen changes the structure and the dielectric characteristic of XLPE near the contact interface, which may be the main reason for space charge suppression in XLPE with Borouge's type LE0550 semiconductive screen.

  19. Nonlinear Hysteretic Torsional Waves

    NASA Astrophysics Data System (ADS)

    Cabaret, J.; Béquin, P.; Theocharis, G.; Andreev, V.; Gusev, V. E.; Tournat, V.

    2015-07-01

    We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters.

  20. Nonlinear Hysteretic Torsional Waves.

    PubMed

    Cabaret, J; Béquin, P; Theocharis, G; Andreev, V; Gusev, V E; Tournat, V

    2015-07-31

    We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters.

  1. PREFACE: 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)

    NASA Astrophysics Data System (ADS)

    Walther, T.; Hutchison, John L.

    2013-11-01

    YRM logo This volume contains invited and contributed papers from the 18th international conference on 'Microscopy of Semiconducting Materials' held at St Catherine's College, University of Oxford, on 7-11 April 2013. The meeting was organised under the auspices of the Royal Microscopical Society and supported by the Institute of Physics as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and scanning probe microscopy with high spatial resolution. This time the meeting was attended by 109 delegates from 17 countries world-wide. We were welcomed by Professor Sir Peter Hirsch, who noted that this was the first of these conferences where Professor Tony Cullis was unable to attend, owing to ill-health. During the meeting a card containing greetings from many of Tony's friends and colleagues was signed, and duly sent to Tony afterwards. As semiconductor devices shrink further new routes for device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, electronic structure, chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two topics that have at this meeting again highlighted the interesting contributions of aberration corrected transmission electron microscopy were: contrast quantification of annular dark-field STEM images in terms of chemical composition (Z-contrast), sample thickness and strain, and the study of

  2. Color tunable light-emitting diodes based on copper doped semiconducting nanocrystals

    NASA Astrophysics Data System (ADS)

    Bhaumik, Saikat; Ghosh, Batu; Pal, Amlan J.

    2011-08-01

    We have introduced copper-doped semiconducting nanocrystals in light-emitting diodes (LEDs). Characteristics of the devices show that electroluminescence (EL) emission in these LEDs is color tunable. In copper-doped ZnS nanocrystals in the core and Zn1-xCdxS host as a shell-layer, photoluminescence (PL) arises from a transition from conduction band-edge of the host to 3d-levels of copper-ions. The PL of the nanocrystals and hence the EL of LEDs based on such nanostructures become tunable by varying the Cd-content in Zn-Cd-S alloys, that is, Zn1-xCdxS with different values of x, which changes the conduction band-edge of the host.

  3. Novel semiconducting polymers: Synthesis, characterization, and their application in organic electronics

    NASA Astrophysics Data System (ADS)

    Hubijar, Emir

    Conjugated polymers have attracted considerable attention as semiconducting materials in recent years due to their versatile electronic and optoelectronic applications. The main promise of conjugated polymers is not just attaining or exceeding the level of performance of silicon technologies but also producing electronic devices at a lower cost and enabling completely new device functionalities such as light weight, large surface area, mechanical flexibility, and optical transparency. Due to their broad potential, conjugated polymers have been incorporated in the wide range of applications, including polymer light-emitting diodes (LEDs), organic field-effect transistors (OFETs), and polymer solar cells (PSCs). Chapter 1 provides general information on conjugated polymers utilized in polymer light-emitting diodes (LEDs), polymer solar cells (PSCs) and organic field effect transistors (OFETs). It also includes brief description and schematic diagrams for each device configuration. Chapter 2 describes the synthesis, characterization and electronic properties of a novel symmetrical sulfone-substituted polyphenylene vinylene (SO 2EH-PPV) for applications in light-emitting devices. The sulfonyl functional group was directly attached to the polymer's backbone to increase the electron affinities of the polymer. The polymer was incorporated into a single layer PLED devices with the configuration of (ITO/ PEDOT:PSS/SO2EH-PPV polymer/Al). Chapter 3 focuses on the synthesis and color tuning of novel poly (fluorenevinylene-co-sulfonylphenylenevinylene) based copolymers for application in light-emitting diodes. New electroluminescent Poly(fluorenevinylene)-co-(sulfonylphenylenevinylene) random copolymers with different monomer feed ratios (PFV-SO2EH 10 and PFV-SO2EH 50) were synthesized via palladium-catalyzed Stille coupling reaction. Single layer stable PLED devices with the configuration of (ITO/PEDOT:PSS/PFV-SO 2EH 10 & PFV-SO2EH 50 polymer/Al) were fabricated exhibiting a

  4. Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Sun, Dong; Lai, Jia-Wei; Ma, Jun-Chao; Wang, Qin-Sheng; Liu, Jing

    2017-03-01

    The two dimensional layered transition metal dichalcogenides provide new opportunities in future valley based information processing and also provide ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel context of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley related many particle electronic states in semiconducting monolayer transitional metal dichalcogenides.

  5. Semiconducting organic-inorganic nanocomposites by intimately tethering conjugated polymers to inorganic tetrapods

    NASA Astrophysics Data System (ADS)

    Jung, Jaehan; Yoon, Young Jun; Lin, Zhiqun

    2016-04-01

    Semiconducting organic-inorganic nanocomposites were judiciously crafted by placing conjugated polymers in intimate contact with inorganic tetrapods via click reaction. CdSe tetrapods were first synthesized by inducing elongated arms from CdSe zincblende seeds through seed-mediated growth. The subsequent effective inorganic ligand treatment, followed by reacting with short bifunctional ligands, yielded azide-functionalized CdSe tetrapods (i.e., CdSe-N3). Finally, the ethynyl-terminated conjugated polymer poly(3-hexylthiophene) (i.e., P3HT-&z.tbd;) was tethered to CdSe-N3 tetrapods via a catalyst-free alkyne-azide cycloaddition, forming intimate semiconducting P3HT-CdSe tetrapod nanocomposites. Intriguingly, the intimate contact between P3HT and CdSe tetrapod was found to not only render the effective dispersion of CdSe tetrapods in the P3HT matrix, but also facilitate the efficient electronic interaction between these two semiconducting constituents. The successful anchoring of P3HT chains onto CdSe tetrapods was substantiated through Fourier transform infrared spectroscopy and nuclear magnetic resonance spectroscopy measurements. Moreover, the absorption and photoluminescence studies further corroborated the intimate tethering between P3HT and CdSe tetrapods. The effect of the type of bifunctional ligands (i.e., aryl vs. aliphatic ligands) and the size of tetrapods on the device performance of hybrid organic-inorganic solar cells was also scrutinized. Interestingly, P3HT-CdSe tetrapod nanocomposites produced via the use of an aryl bifunctional ligand (i.e., 4-azidobenzoic acid) exhibited an improved photovoltaic performance compared to that synthesized with their aliphatic ligand counterpart (i.e., 5-bromovaleric acid). Clearly, the optimal size of CdSe tetrapods ensuring the effective charge transport in conjunction with the good dispersion of CdSe tetrapods rendered an improved device performance. We envision that the click-reaction strategy enabled by

  6. Transport properties in semiconducting NbS{sub 2} nanoflakes

    SciTech Connect

    Huang, Y. H.; Chen, R. S. Ho, C. H.; Peng, C. C.; Huang, Y. S.

    2014-09-01

    The electronic transport properties in individual niobium disulphide (NbS{sub 2}) nanoflakes mechanically exfoliated from the bulk crystal with three rhombohedral (3R) structure grown by chemical vapor transport were investigated. It is found that the conductivity values of the single-crystalline nanoflakes are approximately two orders of magnitude lower than that of their bulk counterparts. Temperature-dependent conductivity measurements show that the 3R-NbS{sub 2} nanoflakes exhibit semiconducting transport behavior, which is also different from the metallic character in the bulk crystals. In addition, the noncontinuous conductivity variations were observed at the temperature below 180 K for both the nanoflakes and the bulks, which is attributed to the probable charge density wave transition. The photoconductivities in the semiconducting nanoflakes were also observed under the excitation at 532 nm wavelength. The probable mechanisms resulting in the different transport behaviors between the NbS{sub 2} nanostructure and bulk were discussed.

  7. Excitonic absorption intensity of semiconducting and metallic carbon nanotubes.

    PubMed

    Verdenhalven, Eike; Malić, Ermin

    2013-06-19

    The knowledge of the intrinsic absorption intensity of each carbon nanotube is of crucial importance for the optical assignment of nanotube species and the estimation of their abundance in a sample. Based on a microscopic approach, we calculate excitonic absorption spectra for a variety of semiconducting and metallic nanotubes, revealing a clear diameter, chirality, and family dependence of the absorption intensity. In particular, we also study the appearance of excited excitonic transitions, which are shown to be well pronounced for semiconducting nanotubes, reaching intensities of up to 10% of the main transition. We find that nanotubes with large diameters show the most pronounced absorption intensities, confirming well the experimentally observed trend. Depending on the CNT family and transition, the absorption is enhanced or reduced with the chiral angle. This behavior reflects well the qualitative chirality dependence of the analytically derived optical matrix element.

  8. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  9. Optics and Optoelectronics of Two-dimensional Semiconducting Monolayers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Ross, Jason Solomon

    Until recently, the physics of truly two-dimensional (2D) excitons could only be explored theoretically. Following the discovery of graphene, many 2D materials were quickly identified and isolated, one system being the semiconducting Group VI-B transition metal dichalcogenides (TMDs). These semiconductors are the first air-stable materials that are atomically thin (three atomics thick), and yet can be produced in arbitrarily large lateral sheets. They have a direct band gap in which confinement leads to large spatial overlap of electrons and holes resulting in strongly coupled excitonic transitions that dominate light-matter interactions. The direct band-gap of monolayer TMDs occurs at the corners of the hexagonal Brillouin zone, referred to as the K valleys. Entirely unique to these materials, excitons in adjacent K valleys selectively couple to light of opposite circular polarization, i.e. the K (K') valley is selective to right (left) circularly polarized photons. This property offers the possible realization of novel devices that will manipulate the valley index, known as valleytronics. Further, creating a stacked heterostructure (HS) of two TMD monolayers of different molecular species can exhibit type-II band alignment leading to the first atomically sharp built-in p-n junction and a bright interlayer exciton with long lifetimes. Being flat 2D sheets, it is easy to couple these materials to nearby systems such as microfabricated electrodes and photonic crystal cavities allowing for unique modulation and device schemes. Here, I employ both optical and electronic techniques to study the unique physics of 2D excitons in TMDs as well as demonstrate some of their first optoelectronic and valleytronic devices. The most notable achievement is perhaps the first demonstrations of both atomically thin and 2D heterostructure light emitting diodes and photovoltaic devices. Other breakthroughs include the first demonstration of exciton charging tunability in a 2D system

  10. Electronic structure and quantum transport properties of metallic and semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Simbeck, Adam J.

    The future of the semiconductor industry hinges upon new developments to combat the scaling issues that currently afflict two main chip components: transistors and interconnects. For transistors this means investigating suitable materials to replace silicon for both the insulating gate and the semiconducting channel in order to maintain device performance with decreasing size. For interconnects this equates to overcoming the challenges associated with copper when the wire dimensions approach the confinement limit, as well as continuing to develop low-k dielectric materials that can assure minimal cross-talk between lines. In addition, such challenges make it increasingly clear that device design must move from a top-down to a bottom-up approach in which the desired electronic characteristics are tailored from first-principles. It is with such fundamental hurdles in mind that ab initio calculations on the electronic and quantum transport properties of nanoscale metallic and semiconducting wires have been performed. More specifically, this study seeks to elaborate on the role played by confinement, contacts, dielectric environment, edge decoration, and defects in altering the electronic and transport characteristics of such systems. As experiments continue to achieve better control over the synthesis and design of nanowires, these results are expected to become increasingly more important for not only the interpretation of electronic and transport trends, but also in engineering the electronic structure of nanowires for the needs of the devices of the future. For the metallic atomic wires, the quantum transport properties are first investigated by considering finite, single-atom chains of aluminum, copper, gold, and silver sandwiched between gold contacts. Non-equilibrium Green's function based transport calculations reveal that even in the presence of the contact the conductivity of atomic-scale aluminum is greater than that of the other metals considered. This is

  11. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE PAGES

    Ryu, H.; Lei, H.; Klobes, B.; ...

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  12. Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors

    DTIC Science & Technology

    2013-11-25

    AEROSPACE REPORT NO. ATR-2013-01138 Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors ...Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors November 25, 2013 Adam W. Bushmaker Electronics and...Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors Approved by: U^ g jj t^yt Steven C

  13. Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

    NASA Technical Reports Server (NTRS)

    Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

    1999-01-01

    This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

  14. Process for separating metallic from semiconducting single-walled carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Sun, Ya-Ping (Inventor)

    2008-01-01

    A method for separating semiconducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes is disclosed. The method utilizes separation agents that preferentially associate with semiconducting nanotubes due to the electrical nature of the nanotubes. The separation agents are those that have a planar orientation, .pi.-electrons available for association with the surface of the nanotubes, and also include a soluble portion of the molecule. Following preferential association of the separation agent with the semiconducting nanotubes, the agent/nanotubes complex is soluble and can be solubilized with the solution enriched in semiconducting nanotubes while the residual solid is enriched in metallic nanotubes.

  15. Electroexplosive device

    NASA Technical Reports Server (NTRS)

    Menichelli, V. J. (Inventor)

    1978-01-01

    An electroexplosive device is presented which employs a header having contact pins hermetically sealed with glass passing through from a connector end of the header to a cavity filled with a shunt layer of a new nonlinear resistive composition and a heat-sink layer of a new dielectric composition having good thermal conductivity and capacity. The nonlinear resistive layer and the heat-sink layer are prepared from materials by mixing with a low temperature polymerizing resin. The resin is dissolved in a suitable solvent and later evaporated. The resultant solid composite is ground into a powder, press formed into the header and cured (polymerized) at about 250 to 300 F.

  16. Fabrication and Characterization of Self-Aligned T-gate High-Purity Semiconducting Carbon Nanotube RF Transistors

    NASA Astrophysics Data System (ADS)

    Che, Yuchi; Badmaev, Alexander; Kim, Pyojae; Jooyaie, Alborz; Zhou, Chongwu; Chongwu Zhou's nanolab Team

    2013-03-01

    We applied the scalable self-aligned T-shaped gate design to semiconducting nanotube RF transistors. In this way, the channel length can be scaled down to 140 nm which enables quasi ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi quantum capacitance operation. As a result, our nanotube transistors exhibit excellent on-chip device performance and high linearity with channel length scaling down to 140 nm. With T-shaped gate structure, a cut-off frequency up to 22 GHz and power gain frequency of 10 GHz for separated nanotube transistor are achieved. The T-shaped gate design enables high-yield wafer-scale fabrication with controllable gate length scaling. Furthermore, we also characterized the linearity properties of nanotube transistors, with the 1-dB compression point measurement, in source/load pull setup, with positive power gain to our knowledge, for the first time. Above all, our work reveals that the semiconducting nanotube RF transistor is an interesting and promising direction in high frequency device and circuit exploration.

  17. Electrical device fabrication from nanotube formations

    DOEpatents

    Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

    2013-03-12

    A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

  18. Efficiency of luminous-energy conversion in semiconducting photoelectrochemical converters

    SciTech Connect

    Kireev, V.B.; Trukhan, E.M.; Filimonov, D.A.

    1981-03-01

    Factors characterizing the conversion efficiency of luminous into chemical energy in semiconducting photoelectrochemical converters are examined. An expression for /gamma/sub //O is discussed in particular; /gamma/sub //O is the quantum yield of photocurrent of the minority carriers sustaining the reaction during which chemical energy is accumulated. The expression for /gamma/sub //O allows, both for the finite rate of electrode surface processes and for recombination in the semiconductor's space-charge layer. It is shown that over a wide range of converter parameters, recombination in the space-charge layer is one of the most important factors for the size of /gamma/sub //O. 17 refs.

  19. Novel thiophene-containing semiconducting polymers for organic electronic applications

    NASA Astrophysics Data System (ADS)

    Hundt, Nadia Khanam

    The pi-conjugated polymers such as polythiophenes (PT's) represent a class of organic-based materials that possess unique optical and electronic properties. The electronic properties of such conjugated macromolecules are primarily governed by the chemical structure of the polymer backbone itself. Synthesizing new conjugated polymers by further functionalizing precursor monomers is an attractive route to enhance optical and electronic properties of these materials. The introduction of an unsaturated side chain will encourage solid-state pi-pi stacking and allow for facile post polymerization chemical modification. Additionally, a number of other tools can be employed in order to adjust the electronic properties of conjugated polymers. Tuning the band gap of conjugated polymers and introduction of liquid crystalline segments are two important strategies to tune the opto-electronic and physical properties of these materials. The research efforts of this thesis have been directed towards the design, synthesis, and electronic characterization of well-defined novel semiconducting thiophene-based polymers. Chapter 1 focuses on the synthesis and characterization of novel poly (3-alkenylthiophene) derivatives. The copolymers have been investigated as the active layer in organic field-effect transistors. The surface morphology of polymer films has been analyzed by AFM microscopy. Chapter 2 describes the synthesis of novel semiconducting polymers with extended electron delocalization. Semiconducting polymers containing a fused benzodithiophene core with phenylethynyl substituents were prepared and characterized. The electronic properties and morphologies of the synthesized homopolymers and copolymers containing benzodithiophene with phenylethynyl substituents were correlated with their molecular structures. The synthesized polymers have a lower band gap due to the extended electron delocalization. Chapter 3 describes the synthesis of a novel rod-rod di-block copolymer

  20. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  1. Encapsulation of Semiconducting Polymers in Vault Protein Cages

    SciTech Connect

    Ng, B.C.; Yu, M.; Gopal, A.; Rome, L.H.; Monbouquette, H.G.; Tolbert, S.H.

    2009-05-22

    We demonstrate that a semiconducting polymer [poly(2-methoxy-5-propyloxy sulfonate phenylene vinylene), MPS-PPV] can be encapsulated inside recombinant, self-assembling protein nanocapsules called 'vaults'. Polymer incorporation into these nanosized protein cages, found naturally at {approx}10,000 copies per human cell, was confirmed by fluorescence spectroscopy and small-angle X-ray scattering. Although vault cellular functions and gating mechanisms remain unknown, their large internal volume and natural prevalence within the human body suggests they could be used as carriers for therapeutics and medical imaging reagents. This study provides the groundwork for the use of vaults in encapsulation and delivery applications.

  2. Ultraviolet optical absorptions of semiconducting copper phosphate glasses

    NASA Technical Reports Server (NTRS)

    Bae, Byeong-Soo; Weinberg, Michael C.

    1993-01-01

    Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

  3. Cognitive Nonlinear Radar

    DTIC Science & Technology

    2013-01-01

    Devices and Method for Detecting Emplacement of Improvised Explosive Devices, U. S. Patent 7,680,599, Mar. 16, 2010. 11. Steele, D.; Rotondo, F.; Houck...Patent 7,987,068, Jul. 26, 2011. 9 14. Keller, W. Active Improvised Explosive Device (IED) Electronic Signature Detection , U. S. Patent...operate without interfering with each other. The CNR uses a narrowband, nonlinear radar target detection methodology. This methodology has the advantage

  4. Unsymmetrical squaraines for nonlinear optical materials

    NASA Technical Reports Server (NTRS)

    Marder, Seth R. (Inventor); Chen, Chin-Ti (Inventor); Cheng, Lap-Tak (Inventor)

    1996-01-01

    Compositions for use in non-linear optical devices. The compositions have first molecular electronic hyperpolarizability (.beta.) either positive or negative in sign and therefore display second order non-linear optical properties when incorporated into non-linear optical devices.

  5. Networks of semiconducting SWNTs: contribution of midgap electronic states to the electrical transport.

    PubMed

    Itkis, Mikhail E; Pekker, Aron; Tian, Xiaojuan; Bekyarova, Elena; Haddon, Robert C

    2015-08-18

    Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300-100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the

  6. Dissociating excitons photogenerated in semiconducting carbon nanotubes at polymeric photovoltaic heterojunction interfaces.

    PubMed

    Bindl, Dominick J; Safron, Nathaniel S; Arnold, Michael S

    2010-10-26

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges, which are bound as excitons in s-SWCNTs, can be dissociated in large-area solid-state devices. Here, we measure the dissociation of excitons in s-SWCNT thin films that form planar heterojunction interfaces with polymeric photovoltaic materials using an exciton dissociation-sensitive photocapacitor measurement technique that is advantageously insensitive to optically induced thermal photoconductive effects. We find that fullerene and polythiophene derivatives induce exciton dissociation, resulting in electron and hole transfer, respectively, away from optically excited s-SWCNTs. Significantly weaker or no charge transfer is observed using wider gap polymers due to insufficient energy offsets. These results are expected to critically guide the development of thin film s-SWCNT-based photosensitive devices.

  7. Optoelectronic properties of Mg{sub 2}Si semiconducting layers with high absorption coefficients

    SciTech Connect

    Kato, Takashi; Sago, Yuichiro; Fujiwara, Hiroyuki

    2011-09-15

    In an attempt to develop a low-cost material for solar cell devices, polycrystalline magnesium silicide (poly-Mg{sub 2}Si) semiconducting layers have been prepared by applying rf magnetron sputtering using a Mg{sub 2}Si target. The optimum substrate temperature for the poly-Mg{sub 2}Si growth was found to be T{sub s} = 200 deg. C; the film deposition at higher temperatures leads to desorption of Mg atoms from the growing surface, while the amorphous phase formation occurs at room temperature. The poly-Mg{sub 2}Si layer deposited at T{sub s} = 200 deg. C shows the (111) preferential orientation with a uniform grain size of {approx}50 nm. The dielectric function of the poly-Mg{sub 2}Si layer has been determined accurately by spectroscopic ellipsometry. From the analysis, quite high absorption coefficients and an indirect gap of 0.77 eV in the poly-Mg{sub 2}Si layer have been confirmed. The above poly-Mg{sub 2}Si layer shows clear photoconductivity and can be applied as a narrow-gap bottom layer in multi-junction solar cell devices.

  8. Energy transfer pathways in semiconducting carbon nanotubes revealed using two-dimensional white-light spectroscopy

    NASA Astrophysics Data System (ADS)

    Mehlenbacher, Randy D.; McDonough, Thomas J.; Grechko, Maksim; Wu, Meng-Yin; Arnold, Michael S.; Zanni, Martin T.

    2015-04-01

    Thin film networks of highly purified semiconducting carbon nanotubes (CNTs) are being explored for energy harvesting and optoelectronic devices because of their exceptional transport and optical properties. The nanotubes in these films are in close contact, which permits energy to flow through the films, although the pathways and mechanisms for energy transfer are largely unknown. Here we use a broadband continuum to collect femtosecond two-dimensional white-light spectra. The continuum spans 500 to 1,300 nm, resolving energy transfer between all combinations of bandgap (S1) and higher (S2) transitions. We observe ultrafast energy redistribution on the S2 states, non-Förster energy transfer on the S1 states and anti-correlated energy levels. The two-dimensional spectra reveal competing pathways for energy transfer, with S2 excitons taking routes depending on the bandgap separation, whereas S1 excitons relax independent of the bandgap. These observations provide a basis for understanding and ultimately controlling the photophysics of energy flow in CNT-based devices.

  9. Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    DOEpatents

    Wang, Zhong L.; Xu, Sheng

    2011-08-23

    An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

  10. Exfoliation of WS2 in the semiconducting phase using a group of lithium halides: a new method of Li intercalation.

    PubMed

    Ghorai, Arup; Midya, Anupam; Maiti, Rishi; Ray, Samit K

    2016-10-14

    Lithium halide assisted high yield synthesis of few layers of 2H phase semiconducting WS2 in organic solvents is reported. A group of lithium halides (LiCl, LiBr and LiI) has been employed for the first time to intercalate WS2 by using Li, followed by mild sonication to exfoliate in dispersive polar solvents. In contrast to the n-butyllithium (n-BuLi) assisted exfoliation method, which yields only the metallic 1T phase on prolonged reaction (3-7 days) at higher temperatures, the proposed exfoliation method produces only semiconducting 2H WS2 in a much shorter time (5 minute sonication). A very high yield of 19 mg ml(-1) has been obtained using LiI as an exfoliating agent due to its lower lattice energy compared to other alkali halides and the smaller size of the cation. Detailed microscopy and spectroscopic characterization reveals exfoliation of few layered WS2 with stoichiometric composition. Absorption and emission characteristics of the 2D WS2 layer exhibit a characteristic band edge and quantum confined transitions. As a proof-of-concept, we have successfully demonstrated photodetector devices comprising solution proccessed p-WS2/n-Si heterojunctions, which behave as diodes with a high rectification ratio (>10(2)) exhibiting a broad band photoresponse over the entire visible region.

  11. Design of Semiconducting Tetrahedral Mn 1 ₋ x Zn x O Alloys and Their Application to Solar Water Splitting

    DOE PAGES

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

    2015-05-18

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn₁₋xZnxO alloys. At Zn compositions above x ≈ 0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

  12. Design of Semiconducting Tetrahedral Mn1 -xZnxO Alloys and Their Application to Solar Water Splitting

    NASA Astrophysics Data System (ADS)

    Peng, Haowei; Ndione, Paul F.; Ginley, David S.; Zakutayev, Andriy; Lany, Stephan

    2015-04-01

    Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn1 -xZnxO alloys. At Zn compositions above x ≈0.3 , thin films of these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. A proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.

  13. Efficient Charge Extraction and Slow Recombination in Organic-Inorganic Perovskites Capped with Semiconducting Single-Walled Carbon Nanotubes

    SciTech Connect

    Ihly, Rachelle; Dowgiallo, Anne-Marie; Yang, Mengjin; Schulz, Philip; Stanton, Noah J.; Reid, Obadiah G.; Ferguson, Andrew J.; Zhu, Kai; Berry, Joseph J.; Blackburn, Jeffrey L.

    2016-04-01

    Metal-halide based perovskite solar cells have rapidly emerged as a promising alternative to traditional inorganic and thin-film photovoltaics. Although charge transport layers are used on either side of perovskite absorber layers to extract photogenerated electrons and holes, the time scales for charge extraction and recombination are poorly understood. Ideal charge transport layers should facilitate large discrepancies between charge extraction and recombination rates. Here, we demonstrate that highly enriched semiconducting single-walled carbon nanotube (SWCNT) films enable rapid (sub-picosecond) hole extraction from a prototypical perovskite absorber layer and extremely slow back-transfer and recombination (hundreds of microseconds). The energetically narrow and distinct spectroscopic signatures for charges within these SWCNT thin films enables the unambiguous temporal tracking of each charge carrier with time-resolved spectroscopies covering many decades of time. The efficient hole extraction by the SWCNT layer also improves electron extraction by the compact titanium dioxide electron transport layer, which should reduce charge accumulation at each critical interface. Finally, we demonstrate that the use of thin interface layers of semiconducting single-walled carbon nanotubes between the perovskite absorber layer and a prototypical hole transport layer improves device efficiency and stability, and reduces hysteresis.

  14. Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays

    NASA Astrophysics Data System (ADS)

    Li, Yingtao; Li, Rongrong; Fu, Liping; Gao, Xiaoping; Wang, Yang; Tao, Chunlan

    2015-10-01

    A crossbar array is usually used for the high-density application of a resistive random access memory (RRAM) device. However, the cross-talk interference limits the increase in the integration density. In this paper, anti-series connected Zener diodes as a selection device are proposed for bipolar RRAM arrays. Simulation results show that, by using the anti-series connected Zener diodes as a selection device, the readout margin is sufficiently improved compared to that obtained without a selection device or with anti-parallel connected diodes as the selection device. The maximum size of the crossbar arrays with anti-series connected Zener diodes as a selection device over 1 TB is estimated by theoretical simulation. In addition, the feasibility of using the anti-series connected Zener diodes as a selection device for bipolar RRAM is demonstrated experimentally. These results indicate that anti-series connected Zener diodes as a selection device opens up great opportunities to realize ultrahigh-density bipolar RRAM arrays.

  15. Exploring the influence of carboxylic acids on nonlinear optical (NLO) and dielectric properties of KDP crystal for applications of NLO facilitated photonic devices

    NASA Astrophysics Data System (ADS)

    Anis, Mohd; Muley, G. G.; Hakeem, A.; Shirsat, M. D.; Hussaini, S. S.

    2015-08-01

    The aim of present investigation is to assess the impact of oxalic acid (OA) and maleic acid (MA) on nonlinearity (second and third order) and dielectric behavior of potassium dihydrogen phosphate (KDP) crystal by means of SHG efficiency test, Z-scan analysis and dielectric studies respectively. The enhancement in SHG efficiency of OA and MA doped KDP crystal has been confirmed by means of Kurtz-Perry powder test technique. The close and open aperture Z-scan technique has been employed to study the nature and origin of improved third order NLO behavior of doped KDP crystals at 632.8 nm. The magnitude of third order nonlinear susceptibility (χ3), nonlinear refraction (n2), nonlinear absorption coefficient (β) and figure of merit (FOM) of doped KDP crystals has been calculated using the Z-scan transmittance data to explore the suitability of crystals for distinct laser assisted applications. The dielectric constant and dielectric loss of pure, OA and MA doped KDP crystals were measured at different temperatures by means of dielectric studies.

  16. Emissivity and electrooptical properties of semiconducting quantum dots/rods and liquid crystal composites: a review

    NASA Astrophysics Data System (ADS)

    Singh, Gautam; Fisch, Michael; Kumar, Satyendra

    2016-05-01

    Investigations of the mixtures of semiconducting quantum scale particles in anisotropic liquid crystal (LC) medium have become a vibrant area of research primarily due to their very interesting phenomenology. The results of these investigations fall into four groups: (i) Photoluminescent emissive properties of the quantum particles ordinarily depend on the size, shape, and chemical nature of the particles. These undergo important changes in their spectrum, polarization, and isotropy of emission when dissolved in an anisotropic LC phase. Moreover, their response to external stimuli such as mechanical, optical, or electric fields is altered in important ways; (ii) physical properties of LCs such as viscosity, dielectric relaxation, etc are modified by the addition of quantum particles. Their presence in ferroelectric smectic LC is known to give rise to an antiferro- to ferri-electric phase transition and suppresses the paraelectric phase; (iii) switching characteristics of LC devices are altered in important ways by the addition of quantum particles. Their threshold voltage is usually lowered, contrast ratio, and switching speed of nematic, ferroelectric, and cholesteric devices may increase or decrease depending on the concentration, applied field, and particle anisotropy; and (iv) controlled aggregation of quantum particles at the interface between isotropic and LC domains, near added polystyrene beads, and in the vicinity of point defects gives rise to interesting photonic structures, enables studies of photon antibunching and single photon sources. Clearly, there is a need to understand the basic and applied aspects of these systems and find routes to their technological applications including sensors, electrooptical devices, and solar energy harvesting. This review provides an overview of recent work involving liquid crystals and a variety of quantum particles.

  17. Polar optical phonons in semiconducting CdS nanocrystals

    SciTech Connect

    Belogorokhov, A. I. Belogorokhov, I. A.; Miranda, R. P.; Vasilevskii, M. I.; Gavrilov, S. A.

    2007-02-15

    We have experimentally and theoretically studied IR-active optical phonons, which are spatially confined in the volume of semiconducting CdS nanocrystals of various shapes synthesized in a dielectric matrix (porous aluminum oxide). Within an approach admitting the mixing of all expected types of vibrations, the complete sets of phonon modes are determined for a spherical quantum dot (QD) and a cylindrical quantum wire (QW) in this matrix. Based on these results, the polarizability spectra of QDs and QWs, as well as the effective dielectric function of a composite material containing such nanoparticles, are calculated for the far-IR wavelength range. It is established that the spectrum of the dielectric function exhibits specific features in the region between the transverse and longitudinal optical phonon frequencies of the massive semiconductor material. These features explain the rather unusual structure of the IR spectra of the composite samples studied.

  18. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    SciTech Connect

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui -Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong -Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  19. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    DOE PAGES

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; ...

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate thatmore » phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

  20. Quantum capacitance modifies interionic interactions in semiconducting nanopores

    NASA Astrophysics Data System (ADS)

    Lee, Alpha A.; Vella, Dominic; Goriely, Alain

    2016-02-01

    Nanopores made with low-dimensional semiconducting materials, such as carbon nanotubes and graphene slit pores, are used in supercapacitors. For modelling purposes, it is often assumed that such pores screen ion-ion interactions like metallic pores, i.e. that screening leads to an exponential decay of the interaction potential with ion separation. By introducing a quantum capacitance that accounts for the density of states in the material, we show that ion-ion interactions in carbon nanotubes and graphene slit pores actually decay algebraically with ion separation. This result suggests a new avenue of capacitance optimization based on tuning the electronic structure of a pore: a marked enhancement in capacitance might be achieved by developing nanopores made with metallic materials or bulk semimetallic materials.

  1. Electrodeposition and characterization of CdSe semiconducting nanowires.

    PubMed

    Yu-Zhang, K; Guo, D Z; Mallet, J; Molinari, M; Loualiche, A; Troyon, M

    2008-04-01

    In this paper, we present our work on the electrodeposited CdSe semiconducting nanowires. Using a low cost and low temperature approach by electrochemistry, CdSe nanowires were successfully grown using polycarbonate template. Depending on the host pore dimension of the substrate, wire diameter can be varied from 400 nm down to 30 nm and wire length from a few microns to tens microns. The as-deposited nanowires exhibit predominantly metastable zinc blende (ZB) structure but after the heat treatment they become wurtzite (W) structure. A combination of different characterization techniques, such as X-ray diffraction, SEM, TEM-HRTEM and EDXS, was used to investigate the growth morphology, crystalline structure and defects in the nanowires. The luminescent properties of CdSe nanowires have also been studied by means of photoluminescence.

  2. Nanoscale semiconducting silicon as a nutritional food additive

    NASA Astrophysics Data System (ADS)

    Canham, L. T.

    2007-05-01

    Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

  3. Spatially Separated Spin Carriers in Spin-Semiconducting Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Wang, Z. F.; Jin, Shuo; Liu, Feng

    2013-08-01

    A graphene nanoribbon with sawtooth edges has a ferromagnetic ground state. Using first-principles and tight-binding model calculations, we show that, under a transverse electrical field, the sawtooth graphene nanoribbons become a spin semiconductor whose charge carriers are not only spin polarized in energy space but also spatially separated at different edges. Low-energy excitation produces spin-up electrons localized at one edge and spin-down holes at the opposite edge, and the excitation energy of spin carries can be tuned by the electric field to reach a new state of spin gapless semiconductor. Also, the spin semiconducting states are shown to be robust against at least 10% edge disorder. These features demonstrate a good tunability of spin carriers for spintronics applications.

  4. Spatially Separated Spin Carriers in Spin-Semiconducting Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Wang, Zhengfei; Jin, Shuo; Liu, Feng

    2014-03-01

    A graphene nanoribbon with sawtooth edges has a ferromagnetic ground state. Using first-principles and tight-binding model calculations, we show that, under a transverse electrical field, the sawtooth graphene nanoribbons become a spin semiconductor whose charge carriers are not only spin polarized in energy space but also spatially separated at different edges. Low-energy excitation produces spin-up electrons localized at one edge and spin-down holes at the opposite edge, and the excitation energy of spin carries can be tuned by the electric field to reach a new state of spin gapless semiconductor. Also, the spin semiconducting states are shown to be robust against at least 10% edge disorder. These features demonstrate a good tunability of spin carriers for spintronics applications. This work was supported by DOE-BES (No. DE-FG02-04ER46148) and NSF-MRSEC (No. DMR-1121252).

  5. Temperature effects on electrical transport in semiconducting nanoporous carbon nanowires

    NASA Astrophysics Data System (ADS)

    Samuel, B. A.; Rajagopalan, R.; Foley, H. C.; Haque, M. A.

    2008-07-01

    In this paper we report on the effect of temperature on the electrical conductivity of amorphous and nanoporous (pores size around 0.5 nm) carbon nanowires. Poly(furfuryl alcohol) nanowires with diameter varying from 150 to 250 nm were synthesized by a template-based technique and upon pyrolysis yielded amorphous carbon nanowires with nanosized pores in them. We observed significant (as high as 700%) decrease in electrical resistance when the nanowire surface temperature was increased from room temperature to 160 °C. On the basis of the experimental and microscopy evidence, we infer a thermally activated carrier transport mechanism to be the primary electrical transport mechanism, at elevated temperatures, in these semiconducting, amorphous, and nanoporous carbon nanowires.

  6. Amplified spontaneous emission properties of semiconducting organic materials.

    PubMed

    Calzado, Eva M; Boj, Pedro G; Díaz-García, María A

    2010-06-18

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature.

  7. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  8. Amplified Spontaneous Emission Properties of Semiconducting Organic Materials

    PubMed Central

    Calzado, Eva M.; Boj, Pedro G.; Díaz-García, María A.

    2010-01-01

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature. PMID:20640167

  9. Large Area Fabrication of Semiconducting Phosphorene by Langmuir-Blodgett Assembly

    PubMed Central

    Kaur, Harneet; Yadav, Sandeep; Srivastava, Avanish. K.; Singh, Nidhi; Schneider, Jörg J.; Sinha, Om. P.; Agrawal, Ved V.; Srivastava, Ritu

    2016-01-01

    Phosphorene is a recently new member of the family of two dimensional (2D) inorganic materials. Besides its synthesis it is of utmost importance to deposit this material as thin film in a way that represents a general applicability for 2D materials. Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-methyl-2-pyrrolidone and deoxygenated water is employed as a subphase in Langmuir-Blodgett trough for assembling the nanosheets followed by their deposition on substrates and studied its field-effect transistor characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 104 at room temperature in field-effect transistor devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications. PMID:27671093

  10. Semiconducting ferroelectric SbSI quantum dots in organically modified TiO2 matrix

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Xu, Yuhuan; Mackenzie, John D.

    2000-05-01

    Semiconducting ferro electric antimony sulphoiodide (SbSI) microcrystallite doped organically modified TiO2 thin film and bulk solids are successfully fabricated by the sol- gel process. Ferro electric SbSI crystallites have some attractive properties, including high dielectric permittivity, high electro-optical coefficient and high photoconductivity. SbSI is also an intrinsic semiconductor with a relatively narrow energy gap. If the crystal size is near its Bohr radius and the microcrystallites are dispersed in a suitable matrix, a dramatic improvement of the third order non linearity will be achieved due to the quantum confinement effect. It is clear that the SbSI quantum dot composites are good candidates for electro-optical devices. Glycidoxypropyltrimetroxysilane modified TiO2 is used as the matrix and SbSI is synthesized in situ by using SbI3 SC9NH2)2 and H2S gas. The size is controlled by the heat-treatment conditions and is characterized by the XRD and HRTEM measurements. The optical absorption spectrum gives evidence of the quantum confinement effect. The third order susceptibility of the SbSI quantum dot is measured by the degenerate four wave mixing method.

  11. Biotin-functionalized semiconducting polymer in an organic field effect transistor and application as a biosensor.

    PubMed

    Kim, Zin-Sig; Lim, Sang Chul; Kim, Seong Hyun; Yang, Yong Suk; Hwang, Do-Hoon

    2012-01-01

    This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor. The side chains of fluorene were partially biotinylated after the esterification of the biotin with corresponding alcohol-groups at the side chain in F8T2. Their properties as an organic semiconductor were tested using an organic thin film transistor (OTFT) and were found to show typical p-type semiconductor curves. The functionality of this biosensor in the sensing of biologically active molecules such as avidin in comparison with bovine serum albumin (BSA) was established through a selective decrease in the conductivity of the transistor, as measured with a device that was developed by the authors. Changes to the optical properties of this polymer were also measured through the change in the color of the UV-fluorescence before and after a reaction with avidin or BSA.

  12. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    NASA Astrophysics Data System (ADS)

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-06-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10‑4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics.

  13. Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films

    PubMed Central

    Taz, H.; Sakthivel, T.; Yamoah, N. K.; Carr, C.; Kumar, D.; Seal, S.; Kalyanaraman, R.

    2016-01-01

    We report a class of amorphous thin film material comprising of transition (Fe) and Lanthanide metals (Dy and Tb) that show unique combination of functional properties. Films were deposited with different atomic weight ratio (R) of Fe to Lanthanide (Dy + Tb) using electron beam co-evaporation at room temperature. The films were found to be amorphous, with grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy studies indicating that the films were largely oxidized with a majority of the metal being in higher oxidation states. Films with R = 0.6 were semiconducting with visible light transmission due to a direct optical band-gap (2.49 eV), had low resistivity and sheet resistance (7.15 × 10−4 Ω-cm and ~200 Ω/sq respectively), and showed room temperature ferromagnetism. A metal to semiconductor transition with composition (for R < 11.9) also correlated well with the absence of any metallic Fe0 oxidation state in the R = 0.6 case as well as a significantly higher fraction of oxidized Dy. The combination of amorphous microstructure and room temperature electronic and magnetic properties could lead to the use of the material in multiple applications, including as a transparent conductor, active material in thin film transistors for display devices, and in spin-dependent electronics. PMID:27298196

  14. Many-body effects in semiconducting single-wall silicon nanotubes

    PubMed Central

    Wei, Wei

    2014-01-01

    Summary The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green’s function method, i.e., GW approximation and Bethe–Salpeter equation. In these studied structures, i.e., (4,4), (6,6) and (10,0) SiNTs, self-energy effects are enhanced giving rise to large quasi-particle (QP) band gaps due to the confinement effect. The strong electron−electron (e−e) correlations broaden the band gaps of the studied SiNTs from 0.65, 0.28 and 0.05 eV at DFT level to 1.9, 1.22 and 0.79 eV at GW level. The Coulomb electron−hole (e−h) interactions significantly modify optical absorption properties obtained at noninteracting-particle level with the formation of bound excitons with considerable binding energies (of the order of 1 eV) assigned: the binding energies of the armchair (4,4), (6,6) and zigzag (10,0) SiNTs are 0.92, 1.1 and 0.6 eV, respectively. Results in this work are useful for understanding the physics and applications in silicon-based nanoscale device components. PMID:24455458

  15. Many-body effects in semiconducting single-wall silicon nanotubes.

    PubMed

    Wei, Wei; Jacob, Timo

    2014-01-06

    The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green's function method, i.e., GW approximation and Bethe-Salpeter equation. In these studied structures, i.e., (4,4), (6,6) and (10,0) SiNTs, self-energy effects are enhanced giving rise to large quasi-particle (QP) band gaps due to the confinement effect. The strong electron-electron (e-e) correlations broaden the band gaps of the studied SiNTs from 0.65, 0.28 and 0.05 eV at DFT level to 1.9, 1.22 and 0.79 eV at GW level. The Coulomb electron-hole (e-h) interactions significantly modify optical absorption properties obtained at noninteracting-particle level with the formation of bound excitons with considerable binding energies (of the order of 1 eV) assigned: the binding energies of the armchair (4,4), (6,6) and zigzag (10,0) SiNTs are 0.92, 1.1 and 0.6 eV, respectively. Results in this work are useful for understanding the physics and applications in silicon-based nanoscale device components.

  16. Critical Role of Processing on the Thermoelectric Performance of Doped Semiconducting Polymers

    NASA Astrophysics Data System (ADS)

    Patel, Shrayesh; Glaudell, Anne; Chabinyc, Michael

    The ability to convert excess waste heat into useable energy can significantly help meet the global energy demands. One may capture this waste heat through thermoelectrics devices. In a thermoelectric material, the charge carriers transport both electrical current and heat. Consequently, under a temperature difference (ΔT), a carrier concentration gradient results in a voltage (ΔV), which is related to the Seebeck coefficient, α = - Δ V/ ΔT. One of the challenges lies in finding materials that simultaneously have low thermal conductivity (κ) , high electrical conductivity (σ) , and high Seebeck coefficient (α) . Conjugated semiconducting polymers can potentially meet this demand due to their inherent low thermal conductivity and high electrical conductivity through sufficient doping. Here, we report on the critical role of thermal processing on the enhancement of thermoelectric properties of conjugated polymer thin films. These films were doping using three different mechanisms: acid (toluene sulfonic acid), charge transfer (F4TCNQ), and vapor (fluorinated-alkyl trichlorosilane). These thermoelectrics properties will be correlated to the structural and morphological properties of the doped thin-films through various synchrotron X-ray scattering techniques. Lastly, to further elucidate the charge transport mechanism driving the thermoelectric performance, we report on the temperature-dependent measurements of both the Seebeck coefficient and electrical conductivity.

  17. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays.

    PubMed

    Engel, Michael; Small, Joshua P; Steiner, Mathias; Freitag, Marcus; Green, Alexander A; Hersam, Mark C; Avouris, Phaedon

    2008-12-23

    Thin film transistors (TFTs) are now poised to revolutionize the display, sensor, and flexible electronics markets. However, there is a limited choice of channel materials compatible with low-temperature processing. This has inhibited the fabrication of high electrical performance TFTs. Single-walled carbon nanotubes (CNTs) have very high mobilities and can be solution-processed, making thin film CNT-based TFTs a natural direction for exploration. The two main challenges facing CNT-TFTs are the difficulty of placing and aligning CNTs over large areas and low on/off current ratios due to admixture of metallic nanotubes. Here, we report the self-assembly and self-alignment of CNTs from solution into micron-wide strips that form regular arrays of dense and highly aligned CNT films covering the entire chip, which is ideally suitable for device fabrication. The films are formed from pre-separated, 99% purely semiconducting CNTs and, as a result, the CNT-TFTs exhibit simultaneously high drive currents and large on/off current ratios. Moreover, they deliver strong photocurrents and are also both photo- and electroluminescent.

  18. Long term experience with semi-conductive glaze high voltage post insulators

    SciTech Connect

    Baker, A.C.; Maney, J.W.; Szilagyi, Z. )

    1990-01-01

    Insulators using semi-conductive glaze have long been known for their superior contamination performance. Early glazes for this type however were not stable and successful use of semi-conductive glazed porcelain insulators was delayed many years until tin-antimony oxide glazes were developed. Service experience of eighteen years is now available for line and station post insulators with this type of glaze. Based on this experience, the aging characteristics of tin-antimony oxide semi-conductive glazes are described and quantified. Several different applications of these insulators are also described.

  19. Laser damage threshold and nonlinear optical studies on guanidinium L - monohydrogen tartrate (GuHT) single crystal for NLO device applications

    NASA Astrophysics Data System (ADS)

    Vivek, P.; Murugakoothan, P.

    2015-06-01

    An organic NLO material guanidinium l - monohydrogen tartrate (GuHT) was grown by the slow evaporation technique using water as a solvent. The GuHT crystal belongs to orthorhombic system with noncentrosymmetric space group P212121. The morphology of the GuHT crystal was studied. The laser induced surface damage threshold behaviour of the GuHT crystal was analyzed in different planes. The second harmonic generation (SHG) effective nonlinearity was confirmed by Kurtz and Perry powder technique.

  20. Nonlinear Optics and Applications

    NASA Technical Reports Server (NTRS)

    Abdeldayem, Hossin A. (Editor); Frazier, Donald O. (Editor)

    2007-01-01

    Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

  1. Remote detection of electronic devices

    DOEpatents

    Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

    2012-09-25

    An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

  2. Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

    NASA Astrophysics Data System (ADS)

    Katzenmeyer, Aaron Michael

    As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

  3. Characterization of asymmetric electron and hole transport in a high-mobility semiconducting polymer

    NASA Astrophysics Data System (ADS)

    Wang, Liguo; Wang, Xinliang; Liu, Mengli; Cheng, Lingfei

    2017-01-01

    The electron and hole transport properties in a high-mobility n-type copolymer poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]-alt-5,5'-(2,2'-dithiophene)}[P(NDI2OD-T2), PolyeraActivInk™ N2200] are investigated. The electron mobility is observed to be more than two orders of magnitude higher than the hole mobility. The thickness-dependent current density versus voltage ( J- V) characteristics of N2200 electron-only and hole-only devices cannot be well described using the conventional mobility model. However, the thickness-dependent and temperature-dependent J- V characteristics of N2200 electron-only and hole-only devices can be accurately described using our recently introduced improved mobility model only with a single set of parameters. Within the improved model, the mobility depends on three important physical quantities: the temperature, carrier density, and electric field. For the semiconducting polymer studied, we find the width of the Gaussian density of states σ = 0.082 eV and the lattice constant a = 0.8 nm for electron transport, while the width of the Gaussian density of states σ = 0.11 eV and the lattice constant a = 0.8 nm for hole transport. It is clear that hole transport exhibits a significantly stronger disorder than electron transport. This is also reflected in the lower hole mobility, as compared to the electron mobility.

  4. The quantum pinch effect in semiconducting quantum wires: A bird’s-eye view

    NASA Astrophysics Data System (ADS)

    Kushwaha, Manvir S.

    2016-01-01

    Those who measure success with culmination do not seem to be aware that life is a journey not a destination. This spirit is best reflected in the unceasing failures in efforts for solving the problem of controlled thermonuclear fusion for even the simplest pinches for over decades; and the nature keeps us challenging with examples. However, these efforts have permitted researchers the obtention of a dense plasma with a lifetime that, albeit short, is sufficient to study the physics of the pinch effect, to create methods of plasma diagnostics, and to develop a modern theory of plasma processes. Most importantly, they have impregnated the solid state plasmas, particularly the electron-hole plasmas in semiconductors, which do not suffer from the issues related with the confinement and which have demonstrated their potential not only for the fundamental physics but also for the device physics. Here, we report on a two-component, cylindrical, quasi-one-dimensional quantum plasma subjected to a radial confining harmonic potential and an applied magnetic field in the symmetric gauge. It is demonstrated that such a system, as can be realized in semiconducting quantum wires, offers an excellent medium for observing the quantum pinch effect at low temperatures. An exact analytical solution of the problem allows us to make significant observations: Surprisingly, in contrast to the classical pinch effect, the particle density as well as the current density display a determinable maximum before attaining a minimum at the surface of the quantum wire. The effect will persist as long as the equilibrium pair density is sustained. Therefore, the technological promise that emerges is the route to the precise electronic devices that will control the particle beams at the nanoscale.

  5. Switching phase separation mode by varying the hydrophobicity of polymer additives in solution-processed semiconducting small-molecule/polymer blends

    NASA Astrophysics Data System (ADS)

    He, Zhengran; Li, Dawen; Hensley, Dale K.; Rondinone, Adam J.; Chen, Jihua

    2013-09-01

    Lateral and vertical phase separations play critical roles in the performance of the next-generation organic and hybrid electronic devices. A method is demonstrated here to switch between lateral and vertical phase separations in semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPSE pentacene)/polymer blend films by simply varying the alkyl length of the polyacrylate polymer component. The phase separation modes depend on intermolecular interactions between small molecule TIPSE pentancene and polymer additives. The blend film with a dominant vertical phase separation exhibits a significant enhancement in average mobility and performance consistency of organic thin-film transistors.

  6. PREFACE: 17th International Conference on Microscopy of Semiconducting Materials 2011

    NASA Astrophysics Data System (ADS)

    Walther, T.; Midgley, P. A.

    2011-11-01

    This volume contains invited and contributed papers from the 17th international conference on 'Microscopy of Semiconducting Materials' held at Churchill College, University of Cambridge, on 4-7 April 2011. The meeting was organised under the auspices of the Institute of Physics and supported by the Royal Microscopical Society as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution. This time the meeting was attended by 131 delegates from 25 countries world-wide, a record in terms of internationality. As semiconductor devices shrink further new routes of device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, the electronic structure, the chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two examples of topics at this meeting that have attracted a number of interesting studies were: the correlation of microstructural, optical and chemical information at atomic resolution with nanometre-scale resolved maps of the local electrical fields in (In,Al)GaN based semiconductors and tomographic approaches to characterise ensembles of nanowires and stacks of processed layers in devices Figure 1 Figure 1. Opening lecture by Professor Sir Colin J Humphreys. Each manuscript submitted for publication in this proceedings volume has been independently reviewed and revised

  7. The influence of contact transparency on the superconducting proximity effect in thin semiconducting films

    NASA Astrophysics Data System (ADS)

    Vissers, Michael Robert

    The superconducting proximity effect allows for the introduction of pair correlations into otherwise normal metals provided that they are coupled through a sufficiently transparent junction. The influence of this proximity effect manifests itself by modifying both the normal layer sheet resistance in the proximity affected region, Rs, and the junction conductance across the N-S boundary, Gc. These two quantities are impossible to measure simultaneously with any single two terminal device even if it is a four point measurement. However, a new three terminal device structure allows us to make two independent four point voltage measurements, which permits the extraction of these two intrinsic aspects of the proximity effect when combined with simple Ohm's law modeling. Devices with completely in-situ junctions between niobium and heavily doped n-GaAs and n-InAs were fabricated via molecular beam epitaxy. In order to reduce the Schottky barrier, a graded and delta-doped InGaAs cap was inserted at the interface. Careful construction of the doping profile in the cap allows for extremely transparent junctions just prior to the onset of superconductivity, the most transparent Nb-GaAs junctions yet reported. The transparency of the junction can be evaluated by calculating the number of available quantum channels between the two different Fermi surfaces and using the Landauer formalism to determine the ideal junction conductance. Comparison to the experimental junction conductance permits the discovery of the fundamental transmission coefficient for transport across the N-S interface. If the semiconducting depth is small enough the presence of correlations in the semiconductor are observed. Samples with deeper depths exhibit no direct evidence of superconductivity inside the semiconductor. Samples consisting of doped InAs were also fabricated and measured. These samples exhibit almost perfect contact between the superconductor and the semiconductor and pair correlations are

  8. Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

    SciTech Connect

    Hughes, Steven Michael

    2007-01-01

    The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

  9. Gas sensors based on semiconducting nanowire field-effect transistors.

    PubMed

    Feng, Ping; Shao, Feng; Shi, Yi; Wan, Qing

    2014-09-17

    One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

  10. Damage Diagnosis in Semiconductive Materials Using Electrical Impedance Measurements

    NASA Technical Reports Server (NTRS)

    Ross, Richard W.; Hinton, Yolanda L.

    2008-01-01

    Recent aerospace industry trends have resulted in an increased demand for real-time, effective techniques for in-flight structural health monitoring. A promising technique for damage diagnosis uses electrical impedance measurements of semiconductive materials. By applying a small electrical current into a material specimen and measuring the corresponding voltages at various locations on the specimen, changes in the electrical characteristics due to the presence of damage can be assessed. An artificial neural network uses these changes in electrical properties to provide an inverse solution that estimates the location and magnitude of the damage. The advantage of the electrical impedance method over other damage diagnosis techniques is that it uses the material as the sensor. Simple voltage measurements can be used instead of discrete sensors, resulting in a reduction in weight and system complexity. This research effort extends previous work by employing finite element method models to improve accuracy of complex models with anisotropic conductivities and by enhancing the computational efficiency of the inverse techniques. The paper demonstrates a proof of concept of a damage diagnosis approach using electrical impedance methods and a neural network as an effective tool for in-flight diagnosis of structural damage to aircraft components.

  11. Temperature Dependence of the Band Gap of Semiconducting Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Capaz, Rodrigo B.; Tangney, Paul; Spataru, Catalin D.

    2005-03-01

    The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality dependence of Eg(T) is obtained, including non-monotonic behavior for certain tubes and distinct ``family'' behavior. These results are traced to a strong and complex coupling between band-edge states and the lowest-energy optical phonon modes in SWNTs. The Eg(T) curves are modeled by an analytic function with diameter and chirality dependent parameters; these provide a valuable guide for systematic estimates of Eg(T) for any given SWNT. Magnitudes of the temperature shifts at 300 K are smaller than 12 meV and should not affect (n,m) assignments based on optical measurements. RBC acknowledges financial support from the John Simon Guggenheim Memorial Foundation and Brazilian funding agencies CNPq, FAPERJ, Instituto de Nanociências, FUJB-UFRJ and PRONEX-MCT. Work partially supported by NSF Grant No. DMR00-87088 and DOE Contract No. DE-AC03-76SF00098. Computer resources were provided by NERSC and NPACI.

  12. A statistical model of a metallic inclusion in semiconducting media

    NASA Astrophysics Data System (ADS)

    Shikin, V. B.

    2016-11-01

    The properties of an isolated multicharged atom embedded into a semiconducting medium are discussed. The analysis generalizes the results of the known Thomas-Fermi theory for a multicharged ( Z ≫ 1) atom in vacuum when it is immersed into an electron-hole gas of finite temperature. The Thomas-Fermi-Debye (TFD) atom problem is directly related to the properties of donors in low-doped semiconductors and is alternative in its conclusions to the ideal scenario of dissociation of donors. In the existing ideal statistics, an individual donor under infinitely low doping is completely ionized (a charged center does not hold its neutralizing counter-ions). A Thomas-Fermi-Debye atom (briefly, a TFD donor) remains a neutral formation that holds its screening "coat" even for infinitely low doping level, i.e., in the region of n d λ0 3 ≪ 1, where n d is the concentration of the doping impurity and λ0 is the Debye length with the parameters of intrinsic semiconductor. Various observed consequences in the behavior of a TFD donor are discussed that allow one to judge the reality of the implications of the TFD donor model.

  13. Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

    PubMed Central

    Feng, Ping; Shao, Feng; Shi, Yi; Wan, Qing

    2014-01-01

    One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed. PMID:25232915

  14. Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers

    DOE PAGES

    Sivadas, Nikhil; Daniels, Matthew W.; Swendsen, Robert H.; ...

    2015-06-16

    Layered transition-metal trichalcogenides with the chemical formula ABX3 have attracted recent interest as potential candidates for two-dimensional magnets. Using first-principles calculations within density functional theory, we investigate the magnetic ground states of monolayers of Mn- and Cr-based semiconducting trichalcogenides.We show that the second and third nearest-neighbor exchange interactions (J2 and J3) between magnetic ions, which have been largely overlooked in previous theoretical studies, are crucial in determining the magnetic ground state. Specifically, we find that monolayer CrSiTe3 is an antiferromagnet with a zigzag spin texture due to significant contribution from J3, whereas CrGeTe3 is a ferromagnet with a Curie temperaturemore » of 106 K. Monolayers of Mn compounds (MnPS3 and MnPSe3) always show antiferromagnetic N eel order. We identify the physical origin of various exchange interactions, and demonstrate that strain can be an effective knob for tuning the magnetic properties. Possible magnetic ordering in the bulk is also discussed. In conclusion, our study suggests that ABX3 can be a promising platform to explore two-dimensional magnetic phenomena.« less

  15. Information-based screens for deep traps in semiconducting materials

    NASA Astrophysics Data System (ADS)

    Ferris, Kim; Shah, Kunal; Jones, Dumont

    2011-03-01

    The key to a successful materials search is the ability to suggest promising materials and a priori eliminate unfruitful inquiry. For semiconducting radiation detection materials, performance is characterized by several key properties; band gap, density, electron mobility, and carrier lifetime. The material's proclivity to form defects is critical, as even simple antisite and vacancy defects can be sufficiently deep to affect effective carrier lifetime and mobility. We have developed a new model for defect formation proclivity, leveraging prior defect models (van Vechten and Feichter) and our information-based work. Our approach is based upon classification of materials chemistry and properties consistent with high concentrations of particular defects (e.g. antisites and vacancies). One issue is that nearly any charged local defect can potentially form a deep trap, so the screen must cover different defect types. Second, the screening model for new materials cannot rely on generally unknown factors such as 3D crystal geometry. The resulting model is intended to provide design guidance on expected defect behavior for candidate detection materials for which there is little or no prior information. The authors gratefully acknowledge financial support from U.S. Department of Homeland Security under Contract No. HSHQDC-08-X-00872.

  16. Solidification and crystal growth of solid solution semiconducting alloys

    NASA Technical Reports Server (NTRS)

    Lehoczky, S. L.; Szofran, F. R.

    1984-01-01

    Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

  17. Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers

    SciTech Connect

    Sivadas, Nikhil; Daniels, Matthew W.; Swendsen, Robert H.; Okamoto, Satoshi; Xiao, Di

    2015-06-16

    Layered transition-metal trichalcogenides with the chemical formula ABX3 have attracted recent interest as potential candidates for two-dimensional magnets. Using first-principles calculations within density functional theory, we investigate the magnetic ground states of monolayers of Mn- and Cr-based semiconducting trichalcogenides.We show that the second and third nearest-neighbor exchange interactions (J2 and J3) between magnetic ions, which have been largely overlooked in previous theoretical studies, are crucial in determining the magnetic ground state. Specifically, we find that monolayer CrSiTe3 is an antiferromagnet with a zigzag spin texture due to significant contribution from J3, whereas CrGeTe3 is a ferromagnet with a Curie temperature of 106 K. Monolayers of Mn compounds (MnPS3 and MnPSe3) always show antiferromagnetic N eel order. We identify the physical origin of various exchange interactions, and demonstrate that strain can be an effective knob for tuning the magnetic properties. Possible magnetic ordering in the bulk is also discussed. In conclusion, our study suggests that ABX3 can be a promising platform to explore two-dimensional magnetic phenomena.

  18. Semiconducting polyacetylene materials for energy-conversion applications

    NASA Astrophysics Data System (ADS)

    Kiss, Z.; Weinberger, B.

    1982-03-01

    Well controlled growth of semiconducting polyacetylene films by the Ziegler catalyst method was achieved. Thermal isomerization to the trans-(CH)/sub x/stage has yielded (CH)/sub x/films of p-type doping with an acceptor concentration of 10 to the sixteenth to 10 to the 17th power cu cm. Initial proof of concept experiments were also performed to grow polyacetylene by a plasma assisted process. The band edge of (CH)/sub x/ was measured. The technique consisted of measuring the photoresponse of a reverse biased (CH)/sub x/ solar cell, and studying the cut off in the response. The (CH)/sub x/ films had a band gap in the range of 1.4 to 1.5 eV, in good agreement with the measurement of absorption. A very important result of the successful demonstration of this technique is that very low absorption coefficients can be measured quite easily, yielding invaluable data on band tails in (CH)/sub x/.

  19. Synthesis and spectroscopic properties of a soluble semiconducting porphyrin polymer.

    PubMed

    Schmitz, Robert A; Liddell, Paul A; Kodis, Gerdenis; Kenney, Michael J; Brennan, Bradley J; Oster, Nolan V; Moore, Thomas A; Moore, Ana L; Gust, Devens

    2014-09-07

    A semiconducting porphyrin polymer that is solution processable and soluble in organic solvents has been synthesized, and its spectroscopic and electrochemical properties have been investigated. The polymer consists of diarylporphyrin units that are linked at meso-positions by aminophenyl groups, thus making the porphyrin rings an integral part of the polymer backbone. Hexyl chains on two of the aryl groups impart solubility. The porphyrin units interact only weakly in the ground electronic state. Excitation produces a local excited state that rapidly evolves into a state with charge-transfer character (CT) involving the amino nitrogen and the porphyrin macrocycle. Singlet excitation energy is transferred between porphyrin units in the chain with a time constant of ca. 210 ps. The final CT state has a lifetime of several nanoseconds, and the first oxidation of the polymer occurs at ca. 0.58 V vs. SCE. These properties make the polymer a suitable potential excited state electron donor to a variety of fullerenes or other acceptor species, suggesting that the polymer may find use in organic photovoltaics, sensors, and similar applications.

  20. Transport and dielectric studies of metallic, semiconducting, and magnetic materials and devices

    NASA Astrophysics Data System (ADS)

    Vasic, Relja

    Several organic and inorganic systems of importance for fundamental physics and applications have been studied by magnetotransport, dielectric constant, and Raman spectroscopy techniques. At the beginning of my thesis work, I investigated three carbon based organic systems: carbon fibers, pentacene derivatives, and a nanomagnetic material ("V15"). In the latter stages of my dissertation, I used the techniques I had developed to explore the properties of two inorganic systems: NiFe nanopillars in a silicon matrix, and spin systems in multiferroic rare earth-transition metal oxides. The main activities and achievements of my thesis work are as follows: The carbon fibers were characterized by magnetotransport and Raman spectroscopy studies. I found that carbon fibers are promising as wires in molecular electronics and compatible with organic films. Preliminary results on simple films of melted pentacene derivatives connected with carbon fiber wires were a first step in the fabrication and characterization of pentacene field effect transistors (FET's). The work on the pentacene system resulted in a series of successful logic circuits based on field-effect transistors such as NOT (inverter), NOR, and NAND. The temperature-dependent mobility was described as thermally activated at low gate voltages, but at high gate voltages the mobility was enhanced due to shallow traps. The second system investigated was the organic nanomagnetic material, polyoxovanadate, K6[V15As6O42(H 2O)]˙8H2O (i.e. V15). The conductivity and the dielectric measurements at high and low temperatures respectively were used to determine electrical properties of this single magnet molecule system. The main accomplishments were the determination of the energy gap (0.2eV) and the identification of multiple dipole relaxation modes. Raman vibrational spectroscopy was used to correlate dielectric relaxation with the Raman intramolecular vibrations. An investigation was then carried out on NiFe nanopillars electrodeposited in nanoporous silicon templates (Si:P), studied with transport and dielectric methods in high magnetic fields. This system exhibited a frequency and temperature dependent dielectric response which followed a Debye relaxation mechanism. It was discovered that in high magnetic fields greater than 10 T, multiple relaxation structures emerged that were magnetic field direction dependent. It was realized that such a phenomena occurs in Si:P, and is not directly related to the NiFe nanostructure. Hence, a new magnetic field induced phenomenon in the dielectric response in Si was observed, which involves the effects of a magnetic field on an electric dipole. Here, the field induces a harmonic oscillator state from the zero field Debye-like relaxation behavior. The final work in the thesis project focused on the inorganic rare-earth transition metal oxide system HoMnO3 and related compounds. Dielectric measurements were used to characterize and map out the magnetic phase transitions in the doped ferroelectric series Ho1-xY xMnO3. The phase transitions involved complex rotations of the Mn spins. I found that the behavior of these spin rotations were highly dependent on magnetic field, magnetic field direction, and the degree of doping with the non-magnetic Y ion. Hence the magnetic field anisotropy study is an important step towards the understanding of magnetic and electric phase competition in the diluted 4 f system by the non-magnetic ion Yttrium (Y). From highly systematic measurements involving these parameters, I mapped out detailed phase diagrams for the Ho1-x YxMnO3 system which will be very useful for future theoretical work to describe the complex spin interactions involved.

  1. Semiconducting Polythiophenes for Field-Effect Transistor Devices in Flexible Electronics: Synthesis and Structure Property Relationships

    NASA Astrophysics Data System (ADS)

    Heeney, Martin; McCulloch, Iain

    Interest in the field of organic electronics has burgeoned over the last 10 years, as the continuing improvement in performance has transitioned the technology from an academic curiosity to the focus of intense industrial and academic research. Much of this interest is driven by the belief that organic materials will be readily amenable to low-cost, large-area deposition techniques, enabling both significant cost savings and the ability to pattern flexible substrates with active electronics. Potential applications include thin-film transistor (TFT) backplanes for a variety of display modes including active matrix liquid crystal displays (AMLCDs), flexible displays such as e-paper, disposable item level radio frequency identity (RFID) tags, flexible solar cells, and cheap and disposable sensors.

  2. Novel BTlGaN semiconducting materials for infrared opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Assali, Abdenacer; Bouslama, M'hamed

    2017-03-01

    BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

  3. ROLE OF THE NETWORK FORMER IN SEMICONDUCTING OXIDE GLASSES.

    DTIC Science & Technology

    SEMICONDUCTOR DEVICES, *GLASS), (*ELECTRICAL NETWORKS, GLASS), ELECTRICAL PROPERTIES, SEEBECK EFFECT , BORATES, PHOSPHATES, ELECTRICAL RESISTANCE, X RAY DIFFRACTION, ANNEALING, OXIDATION, OXIDES, ELECTRODES, VANADIUM

  4. Nonlinear Peltier effect in semiconductors

    NASA Astrophysics Data System (ADS)

    Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali

    2007-09-01

    Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically for single parabolic band semiconductors assuming a shifted Fermi-Dirac electronic distribution under an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters affecting the nonlinear behavior are doping concentration, effective mass, and electron-phonon coupling. Current density thresholds at which nonlinear behavior is observable are extracted from numerical data. It is shown that the nonlinear Peltier effect can be used to enhance cooling of thin film microrefrigerator devices especially at low temperatures.

  5. Nonlinear Waves

    DTIC Science & Technology

    1989-06-15

    following surprising situation. Namely associated with the integrable nonlinear Schrodinger equations are standard numerical schemes which exhibit at...36. An Initial Boundary Value Problem for the Nonlinear Schrodinger Equations , A.S. Fokas, Physica D March 1989. 37. Evolution Theory, Periodic... gravity waves and wave excitation phenomena related to moving pressure distributions; numerical approximation and computation; nonlinear optics; and

  6. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  7. Charged-particle spectroscopy in organic semiconducting single crystals

    NASA Astrophysics Data System (ADS)

    Ciavatti, A.; Sellin, P. J.; Basiricò, L.; Fraleoni-Morgera, A.; Fraboni, B.

    2016-04-01

    The use of organic materials as radiation detectors has grown, due to the easy processability in liquid phase at room temperature and the possibility to cover large areas by means of low cost deposition techniques. Direct charged-particle detectors based on solution-grown Organic Semiconducting Single Crystals (OSSCs) are shown to be capable to detect charged particles in pulse mode, with very good peak discrimination. The direct charged-particle detection in OSSCs has been assessed both in the planar and in the vertical axes, and a digital pulse processing algorithm has been used to perform pulse height spectroscopy and to study the charge collection efficiency as a function of the applied bias voltage. Taking advantage of the charge spectroscopy and the good peak discrimination of pulse height spectra, an Hecht-like behavior of OSSCs radiation detectors is demonstrated. It has been possible to estimate the mobility-lifetime value in organic materials, a fundamental parameter for the characterization of radiation detectors, whose results are equal to μτcoplanar = (5 .5 ± 0.6 ) × 10-6 cm2/V and μτsandwich = (1 .9 ± 0.2 ) × 10-6 cm2/V, values comparable to those of polycrystalline inorganic detectors. Moreover, alpha particles Time-of-Flight experiments have been carried out to estimate the drift mobility value. The results reported here indicate how charged-particle detectors based on OSSCs possess a great potential as low-cost, large area, solid-state direct detectors operating at room temperature. More interestingly, the good detection efficiency and peak discrimination observed for charged-particle detection in organic materials (hydrogen-rich molecules) are encouraging for their further exploitation in the detection of thermal and high-energy neutrons.

  8. Hybrid free electron laser devices

    SciTech Connect

    Asgekar, Vivek; Dattoli, G.

    2007-03-15

    We consider hybrid free electron laser devices consisting of Cerenkov and undulator sections. We will show that they can in principle be used as segmented devices and also show the possibility of exploiting Cerenkov devices for the generation of nonlinear harmonic coherent power. We discuss both oscillator and amplifier schemes.

  9. Nonlinear supratransmission

    NASA Astrophysics Data System (ADS)

    Geniet, F.; Leon, J.

    2003-05-01

    A nonlinear system possessing a natural forbidden band gap can transmit energy of a signal with a frequency in the gap, as recently shown for a nonlinear chain of coupled pendulums (Geniet and Leon 2002 Phys. Rev. Lett. 89 134102). This process of nonlinear supratransmission, occurring at a threshold that is exactly predictable in many cases, is shown to have a simple experimental realization with a mechanical chain of pendulums coupled by a coil spring. It is then analysed in more detail. First we go to different (nonintegrable) systems which do sustain nonlinear supratransmission. Then a Josephson transmission line (a one-dimensional array of short Josephson junctions coupled through superconducting wires) is shown to also sustain nonlinear supratransmission, though being related to a different class of boundary conditions, and despite the presence of damping, finiteness, and discreteness. Finally, the mechanism at the origin of nonlinear supratransmission is found to be a nonlinear instability, and this is briefly discussed here.

  10. Diameter-Specific Growth of Semiconducting SWNT Arrays Using Uniform Mo2C Solid Catalyst.

    PubMed

    Zhang, Shuchen; Tong, Lianming; Hu, Yue; Kang, Lixing; Zhang, Jin

    2015-07-22

    Semiconducting single-walled nanotube (s-SWNT) arrays with specific diameters are urgently demanded in the applications in nanoelectronic devices. Herein, we reported that by using uniform Mo2C solid catalyst, aligned s-SWNT (∼90%) arrays with narrow-diameter distribution (∼85% between 1.0 and 1.3 nm) on quartz substrate can be obtained. Mo2C nanoparticles with monodisperse sizes were prepared by using molybdenum oxide-based giant clusters, (NH4)42[Mo132O372(H3CCOO)30(H2O)72]·10H3CCOONH4·300H2O(Mo132), as the precursor that was carburized by a gas mixture of C2H5OH/H2 during a temperature-programmed reduction. In this approach, the formation of volatile MoO3 was inhibited due to the annealing and reduction at a low temperature. As a result, uniform Mo2C nanoparticles are formed, and their narrow size-dispersion strictly determines the diameter distribution of SWNTs. During the growth process, Mo2C selectively catalyzes the scission of C-O bonds of ethanol molecules, and the resultant absorbed oxygen (Oads) preferentially etches metallic SWNTs (m-SWNTs), leading to the high-yield of s-SWNTs. Raman spectroscopic analysis showed that most of the s-SWNTs can be identified as (14, 4), (13, 6), or (10, 9) tubes. Our findings open up the possibility of the chirality-controlled growth of aligned-SWNTs using uniform carbide nanoparticles as solid catalysts for practical nanoelectronics applications.

  11. Generalized chemical route to develop fatty acid capped highly dispersed semiconducting metal sulphide nanocrystals

    SciTech Connect

    Patel, Jayesh D.; Mighri, Frej; Ajji, Abdellah

    2012-08-15

    Highlights: ► Chemical route for the synthesis of OA-capped CdS, ZnS and PbS at low temperature. ► Synthesized nanocrystals via thermolysis of their metal–oleate complexes. ► Size quantized nanocrystals were highly dispersed and stable at room temperature. -- Abstract: This work deals with the synthesis of highly dispersed semiconducting nanocrystals (NCs) of cadmium sulphide (CdS), zinc sulphide (ZnS) and lead sulphide (PbS) through a simple and generalized process using oleic acid (OA) as surfactant. To synthesize these NCs, metal–oleate (M–O) complexes were obtained from the reaction at 140 °C between metal acetates and OA in hexanes media. Subsequently, M–O complexes were sulphurized using thioacetamide at the same temperature. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) characterizations show that the synthesized products are of nanoscale-size with highly crystalline cubic phase. The optical absorption of OA-capped metal sulphide NCs confirms that their size quantization induced a large shift towards visible region. Photoluminescence (PL) spectrum of CdS NCs shows a broad band-edge emission with shallow and deep-trap emissions, while PL spectrum of ZnS NCs reveals a broad emission due to defects states on the surface. The thermogravimetric analysis (TGA) and Fourier transform infrared (FTIR) spectroscopy indicate that fatty acid monolayers were bound strongly on the nanocrystal surface as a carboxylate and the two oxygen atoms of the carboxylate were coordinated symmetrically to the surface of the NCs. The strong binding between the fatty acid and the NCs surface enhances the stability of NCs colloids. In general, this generalized route has a great potential in developing nanoscale metal sulphides for opto-electronic devices.

  12. Crystal growth, perfection, linear and nonlinear optical, photoconductivity, dielectric, thermal and laser damage threshold properties of 4-methylimidazolium picrate: an interesting organic crystal for photonic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Rajesh, K.; Arun, A.; Mani, A.; Praveen Kumar, P.

    2016-10-01

    The 4-methylimidazolium picrate has been synthesized and characterized successfully. Single and powder x-ray diffraction studies were conducted which confirmed the crystal structure, and the value of the strain was calculated. The crystal perfection was determined by a HRXR diffractometer. The transmission spectrum exhibited a better transmittance of the crystal in the entire visible region with a lower cut-off wavelength of 209 nm. The linear absorption value was calculated by the optical limiting method. A birefringence study was also carried out. Second and third order nonlinear optical properties of the crystal were found by second harmonic generation and the z-scan technique. The crystals were also characterized by dielectric measurement and a photoconductivity analyzer to determine the dielectric property and the optical conductivity of the crystal. The laser damage threshold activity of the grown crystal was studied by a Q-switched Nd:YAG laser beam. Thermal studies established that the compound did not undergo a phase transition and was stable up to 240 °C.

  13. Zinc oxide nanowire networks for macroelectronic devices

    NASA Astrophysics Data System (ADS)

    Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

    2009-04-01

    Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

  14. Generalized Redox-Responsive Assembly of Carbon-Sheathed Metallic and Semiconducting Nanowire Heterostructures.

    PubMed

    Choi, Sinho; Kim, Jieun; Hwang, Dae Yeon; Park, Hyungmin; Ryu, Jaegeon; Kwak, Sang Kyu; Park, Soojin

    2016-02-10

    One-dimensional metallic/semiconducting materials have demonstrated as building blocks for various potential applications. Here, we report on a unique synthesis technique for redox-responsive assembled carbon-sheathed metal/semiconducting nanowire heterostructures that does not require a metal catalyst. In our approach, germanium nanowires are grown by the reduction of germanium oxide particles and subsequent self-catalytic growth during the thermal decomposition of natural gas, and simultaneously, carbon sheath layers are uniformly coated on the nanowire surface. This process is a simple, reproducible, size-controllable, and cost-effective process whereby most metal oxides can be transformed into metallic/semiconducting nanowires. Furthermore, the germanium nanowires exhibit stable chemical/thermal stability and outstanding electrochemical performance including a capacity retention of ∼96% after 1200 cycles at the 0.5-1C rate as lithium-ion battery anode.

  15. Selective dispersion of large-diameter semiconducting single-walled carbon nanotubes with pyridine-containing copolymers.

    PubMed

    Berton, Nicolas; Lemasson, Fabien; Poschlad, Angela; Meded, Velimir; Tristram, Frank; Wenzel, Wolfgang; Hennrich, Frank; Kappes, Manfred M; Mayor, Marcel

    2014-01-29

    The purity of single-walled carbon nanotubes (SWNTs) is a key parameter for their integration in electronic, optoelectronic and photonic devices. Samples of pristine SWNTs are inhomogeneous in terms of electric behavior and diameter and contain a variety of amorphous carbon and catalyst residues. To obtain high performance devices, purification of SWNTs is required. Conjugated polymers have emerged as efficient solubilizing and sorting agents for small diameter SWNTs (HiPco tubes, 0.7 nm<Ø<1.1 nm). Nevertheless, reports on polymers able to efficiently sort large diameter SWNTs with Ø>1.1 nm are lacking. Several pyridine-containing copolymers were synthesized for this purpose and showed efficient and selective extraction of semiconducting large diameter SWNTs (PLV tubes, Ø>1.1 nm). High concentration and high purity suspensions are obtained without the use of ultracentrifugation, which gives an up-scaling potential of the method. The emission wavelength is in near infrared region around 1550 nm and fits with broadly used telecommunication wavelength window. The processes taking place at the interface were simulated by a newly designed hybrid coarse-grain model combining density functional theory and geometrical calculation to yield insights into the wrapping processes with an unprecedented level of details for such large diameter SWNTs.

  16. Understanding and improving the mechanical stability of semiconducting polymers for flexible and stretchable electronics

    NASA Astrophysics Data System (ADS)

    Printz, Adam David

    Polymeric semiconductors offer the promise of low-cost, printable, and mechanically robust electronic devices for use in outdoor, portable, and wearable applications such as organic photovoltaics, biosensors, and electronic skins. However, many organic semiconductors are unable to accommodate the mechanical stresses these applications require, and it is therefore important to understand the factors and parameters that govern the mechanical stability of these materials. Chapter 1 provides a gentle introduction to the electronic and mechanical properties relevant to flexible and stretchable organic semiconductor devices. The idea of inherent competition between electronic performance and mechanical robustness is explored. Chapter 2 investigates the inherent competition between good electronic performance and mechanical robustness in poly(3-alkylthiophene)s. A key finding is a critical alkyl side-chain length that allows for good electronic performance and mechanical compliance. Chapter 3 and Appendix A are further studies on the properties of poly(3-alkylthiophene)s with side-chains close to the critical length to gain better understanding of the transition from good electronic properties and poor mechanical properties to poor electronic properties and good mechanical properties. Chapter 4 and Appendix B detail the effects on mechanical and electronic properties of statistical incorporation of unlike monomer into a low-bandgap polymer backbone in an effort to disrupt aggregation and improve mechanical compliance. Chapter 5 explores how the extent of molecular mixing of polythiophenes and fullerenes---materials common in organic photovoltaics---affects their mechanical properties. Chapter 6 describes the invention of a new technique to determine the yield point of thin films. A dependence on the alkyl-side chain length is observed, as well as a critical film thickness below which the yield point increases substantially. In Chapter 7, the weakly interacting H

  17. A new class of semiconducting polymers for bulk heterojunction solar cells with exceptionally high performance.

    PubMed

    Liang, Yongye; Yu, Luping

    2010-09-21

    Solar cells based on the polymer-fullerene bulk heterojunction (BHJ) concept are an attractive class of low-cost solar energy harvesting devices. Because the power conversion efficiency (PCE) of these solar cells is still significantly lower than that of their inorganic counterparts, however, materials design and device engineering efforts are directed toward improving their output. A variety of factors limit the performance of BHJ solar cells, but the properties of the materials in the active layer are the primary determinant of their overall efficiency. The ideal polymer in a BHJ structure should exhibit the following set of physical properties: a broad absorption with high coefficient in the solar spectrum to efficiently harvest solar energy, a bicontinuous network with domain width within twice that of the exciton diffusion length, and high donor-acceptor interfacial area to favor exciton dissociation and efficient transport of separated charges to the respective electrodes. To facilitate exciton dissociation, the lowest unoccupied molecular orbital (LUMO) energy level of the donor must have a proper match with that of the acceptor to provide enough driving force for charge separation. The polymer should have a low-lying highest occupied molecular orbital (HOMO) energy level to provide a large open circuit voltage (V(oc)). All of these desired properties must be synergistically integrated to maximize solar cell performance. However, it is difficult to design a polymer to fulfill all these requirements. In this Account, we summarize our recent progress in developing a new class of semiconducting polymers, which represents the first polymeric system to generate solar PCE greater than 7%. The polymer system is composed of thieno[3,4-b]thiophene and benzodithiophene alternating units. These polymers have low bandgaps and exhibit efficient absorption throughout the region of greatest photon flux in the solar spectrum (around 700 nm). The stabilization of the

  18. Spectroscopic properties of doped and defective semiconducting oxides from hybrid density functional calculations.

    PubMed

    Di Valentin, Cristiana; Pacchioni, Gianfranco

    2014-11-18

    CONSPECTUS: Very rarely do researchers use metal oxides in their pure and fully stoichiometric form. In most of the countless applications of these compounds, ranging from catalysis to electronic devices, metal oxides are either doped or defective because the most interesting chemical, electronic, optical, and magnetic properties arise when foreign components or defects are introduced in the lattice. Similarly, many metal oxides are diamagnetic materials and do not show a response to specific spectroscopies such as electron paramagnetic resonance (EPR) spectroscopy. However, doped or defective oxides may exhibit an interesting and informative paramagnetic behavior. Doped and defective metal oxides offer an expanding range of applications in contemporary condensed matter science; therefore researchers have devoted enormous effort to the understanding their physical and chemical properties. The interplay between experiment and computation is particularly useful in this field, and contemporary simulation techniques have achieved high accuracies with these materials. In this Account, we show how the direct comparison between spectroscopic experimental and computational data for some selected and relevant materials provides ways to understand and control these complex systems. We focus on the EPR properties and electronic transitions that arise from the presence of dopants and defects in bulk metal oxide materials. We analyze and compare the effect of nitrogen doping in TiO2 and ZnO (two semiconducting oxides) and MgO (a wide gap insulator) and examine the effect of oxygen deficiency in the semiconducting properties of TiO2-x, ZnO1-x, and WO3-x materials. We chose these systems because of their relevance in applications including photocatalysis, touch screens, electrodes in magnetic random access memories, and smart glasses. Density functional theory (DFT) provides the general computational framework used to illustrate the electronic structure of these systems. However

  19. The use of lasers for semiconducter scribing/singulation applications

    NASA Astrophysics Data System (ADS)

    Venkat, Sri; Dunsky, Corey

    2006-02-01

    Semiconductor manufacturing, is dominated by the relentless demand for electronic products with greater performance, minimized dimensions, increased sophistication, and higher speed, all at reduced process cost. Logic device manufacturers need to satisfy this demand by producing integrated circuits that meet the predicted density increase encapsulated in Moore's law. This has led to the use of low-κ dielectrics. For memory devices, thinner wafers are used to enable close stacking of multiple dies in a single low-profile package. And in a third market segment, newer photonic devices are using novel materials such as GaAs, SiC, GaN and sapphire. Traditional mechanical methods are struggling to meet the singulation needs in all three of these device types. Yet at the same time, market realities dictate that the effective cost for increased processing power, novel photonic performance, and higher memory density all continue to fall. As a result, laser-based methods are being adopted in all three areas. In this overview paper, we examine the drivers for each of these market segments and see how laser technology is meeting the singulation demands of current and future devices.

  20. Piezoelectric and Semiconducting Ribbon for Flexible Energy Harvesting

    DTIC Science & Technology

    2012-06-08

    Harvesting Device (a) Interdigitated electrode fabrication (b) Power output test 4 – PZT Energy Harvesting Device  Achieved voltage outputs of 1.5 V...f .~··I ., .. .6 0 .•• ~·· . 0.0 0.5 1.0 1.5 2.5 V (V) AC Interdigitated ...... - PZT ~================~~zro2 me1ubran 1 I I I I...c Q) ! ·c:; ~ I Q) 80 0 (.) 1 (.) ·c ....... (.) Q) ~ Pt bottom electrode Q) 40 0 N Q) 0... 0~------------------------------~ 10 J

  1. Electromechanical properties of single-walled carbon nanotube devices on micromachined cantilevers

    NASA Astrophysics Data System (ADS)

    Jeon, Eun-Kyoung; Park, Chan-Hyun; Lee, Jung A.; Kim, Min-Seok; Lee, Kwang-Cheol; So, Hye-Mi; Ahn, Chiwon; Chang, Hyunju; Kong, Ki-jeong; Kim, Ju-Jin; Lee, Jeong-O.

    2012-11-01

    We have investigated the electromechanical properties of single-walled carbon nanotubes (SWNTs) by constructing carbon nanotube transistors on micro-cantilevers. SWNTs and ultra-long carbon nanotubes (UNTs) were grown on free-standing Si3N4 membranes by using chemical vapor deposition, and electrical contacts were generated with electron beam lithography and lift-off. The cantilevers bearing SWNT devices were micromachined so that hybrid cantilevers with various spring constants were fabricated. To measure the electromechanical properties of the SWNTs, precisely controlled forces were generated by a microbalance and applied to the hybrid cantilever devices. Upon bending, the conductances of the metallic and large-gap semiconducting UNTs showed no notable change, whereas the conductances of the small-gap semiconducting UNTs and networks of SWNTs increased. Numerical simulations of bended SWNT made using a multiscale simulator supported the hypothesis that the small-gap semiconducting SWNTs undergo a metallic transformation upon bending.

  2. Nonlinear optical protection against frequency agile lasers

    SciTech Connect

    McDowell, V.P.

    1988-08-04

    An eye-protection or equipment-filter device for protection from laser energy is disclosed. The device may be in the form of a telescope, binoculars, goggles, constructed as part of equipment such as image intensifiers or range designators. Optical elements focus the waist of the beam within a nonlinear frequency-doubling crystal or nonlinear optical element or fiber. The nonlinear elements produce a harmonic outside the visible spectrum in the case of crystals, or absorb the laser energy in the case of nonlinear fibers. Embodiments include protectors for the human eye as well as filters for sensitive machinery such as TV cameras, FLIR systems or other imaging equipment.

  3. CoPt/CeO2 catalysts for the growth of narrow diameter semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Tang, Lei; Li, Taotao; Li, Chaowei; Ling, Lin; Zhang, Kai; Yao, Yagang

    2015-11-01

    For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduces the diameter distributions and even the chirality distributions of the as-grown SWNTs. Oxygen vacancies that are provided by mesoporous CeO2 are responsible for creating an oxidative environment to in situ etch metallic SWNTs (m-SWNTs). Atomic force microscope (AFM) and Raman spectroscopy characterizations indicate a narrow diameter distribution of 1.32 +/- 0.03 nm and the selective growth of s-SWNTs to 93%, respectively. In addition, electronic transport measurements also confirm that the Ion/Ioff ratio is mainly in the order of ~103. This work provides an effective strategy for the facile fabrication of narrow diameter distributed s-SWNTs, which will be beneficial to fundamental research and the broad application of SWNTs for future nanoelectronics.For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduces the diameter distributions and even the chirality distributions of the as-grown SWNTs. Oxygen vacancies that are provided by mesoporous CeO2 are responsible for creating an oxidative environment to in situ etch metallic SWNTs (m-SWNTs). Atomic force microscope (AFM) and Raman spectroscopy characterizations indicate a narrow diameter distribution of 1.32 +/- 0.03 nm and the selective growth of s-SWNTs to 93%, respectively. In addition

  4. A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field

    NASA Astrophysics Data System (ADS)

    Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

    2016-06-01

    The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m

  5. Nanowire structures and electrical devices

    DOEpatents

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  6. Outlook and emerging semiconducting materials for ambipolar transistors.

    PubMed

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-02-26

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection.

  7. Study of organic-inorganic hetero-interfaces and electrical transport in semiconducting nanostructures

    NASA Astrophysics Data System (ADS)

    Wagner, Sean Robert

    As the electronics industry continues to evolve and move towards functional electronic devices with increasing complexity and functionality, it becomes important to explore materials outside the regime of conventional semiconductors. Organic semiconducting small molecules have received a large amount of attention due to their high degree of flexibility, the option to perform molecular synthesis to modify their electronic and magnetic properties, and their ability to organize into highly-ordered functionalized nanostructures and thin films. Being able to form complex nanostructures and thin films with molecular precision, while maintaining the ability to tune properties through modifications in the molecular chemistry could result in vast improvements in conventional device architectures. However, before this is realized, there still remains a significant lack of understanding regarding how these molecules interact with various substrate surfaces as well as their intermolecular interactions. The interplay between these interactions can produce drastic changes in the molecular orientation and ordering at the hetero-interface, which can affect the transport properties of the molecular thin film and ultimately modify the performance of the organic electronic device. This study first focuses on the growth dynamics, molecular ordering, and molecular orientation of metal phthalocyanine (MPc) molecules, particularly on Si, a substrate which is notoriously difficult to form an organized organic thin film on due to the surface dangling bonds. By deactivating these bonds, the formation of a highly ordered organic molecular thin film becomes possible. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, low-energy electron diffraction, and density functional theory calculations, the growth evolution of MPc molecules ( M = Zn, Cu, Co) from the single molecule level to multilayered films on the deactivated Si(111)-B surface is investigated. Initial tests are

  8. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  9. Growth of Horizontal Semiconducting SWNT Arrays with Density Higher than 100 tubes/μm using Ethanol/Methane Chemical Vapor Deposition.

    PubMed

    Kang, Lixing; Zhang, Shuchen; Li, Qingwen; Zhang, Jin

    2016-06-01

    Horizontally aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays with a certain density are highly desirable for future electronic devices. However, obtaining s-SWNT arrays with simultaneously high purity and high density is extremely challenging. We report herein a rational approach, using ethanol/methane chemical vapor deposition, to grow SWNT arrays with a s-SWNT ratio over 91% and a density higher than 100 tubes/μm. In this approach, at a certain temperature, ethanol was fully thermally decomposed to feed carbon atoms for Trojan-Mo catalysts growing high density SWNT arrays, while the incomplete pyrolysis of methane provided appropriate active H radicals with the help of catalytic sapphire surface to inhibit metallic SWNT (m-SWNT) growth. The synergistic effect of ethanol/methane mixtures resulted in enriched semiconducting SWNTs and no obvious decrease in nanotube density due to their milder reactivity and higher controllability at suitable growth conditions. This work represents a step forward in large-area synthesis of high density s-SWNT arrays on substrates and demonstrates potential applications in scalable carbon nanotube electronics.

  10. Migrating from superconducting to semiconducting YBCO thin film bolometers as future far-infrared imaging pixels

    NASA Astrophysics Data System (ADS)

    Jagtap, Vishal S.; Longhin, Mattia; Kulsreshath, Mukesh K.; Kreisler, Alain J.; Dégardin, Annick F.

    2010-04-01

    YBa2Cu3O6+x compounds are well known to exhibit superconducting properties for x > 0.5 and semiconducting properties for lower oxygen content. Superconducting YBCO was obtained commercially; the semiconducting material was deposited by sputtering at room temperature. In order to migrate from superconducting to uncooled semiconducting far-infrared bolometer technologies, we have first realized and compared the performance of 2 × 2 pixel arrays made from both materials deposited on MgO substrates. Pixels were in the shape of meanders, embedded in an area of about 1 mm2. Pixel detectivity and thermal crosstalk were studied in the 1 Hz to 100 kHz modulation frequency range by using a 850 nm solid state laser. Secondly we have improved the geometry of semiconducting YBCO bolometers fabricated on silicon substrates, in order to match their impedance with the impedance of the antenna required for working in the THz range. First optical results are also presented, where both regular bolometric and pyroelectric responses are exhibited.

  11. Use of semiconducting laser in drug-induced chronic bilateral inflammation of parotid glands

    NASA Astrophysics Data System (ADS)

    Grzesiak-Janas, Grazyna

    1997-10-01

    A case of chronic bilateral inflammation of parotid glands in a patient as a results of complication induced by the drug Ospolot in the treatment of epilepsy was presented. Apart from conventional methods a semiconducting laser was used. The laser beam had beneficial effect on elimination of pain and increase in the parotid gland secretion activity.

  12. Biomedical Detection via Macro- and Nano-Sensors Fabricated with Metallic and Semiconducting Oxides

    PubMed Central

    Hahm, Jong-In

    2013-01-01

    Originally developed as gas sensors, the benefits of metallic and semiconducting oxide materials are now being realized in other areas of sensing, such as chemical, environmental, and biomedical monitoring and detection. Metallic and semiconducting oxides have continuously expanded their roles to date, and have also established their significance in biosensing by utilizing a variety of modes for signal generation and detection mechanism. These sensors are typically based either on their optical, electrochemical, electrical, gravimetric, acoustic, and magnetic properties for signal transduction. This article reviews such biosensors that employ metallic and semiconducting oxides as active sensing elements to detect nucleic acids, proteins, cells, and a variety of important biomarkers, both in thin film and one-dimensional forms. Specific oxide materials (Mx Oy ) examined comprehensively in this article include M = Fe, Cu, Si, Zn, Sn, In. The derivatives of these oxide materials resulting from incorporation of dopants are examined as well. The crystalline structures and unique properties that may be exploited for various biosensing applications are discussed, and recent efforts investigating the feasibility of using these oxide materials in biosensor technology are described. Key biosensor characteristics resulting from reduced dimensionality are overviewed under the motif of planar and one-dimensional sensors. This article also provides insight into current challenges facing biosensor applications for metallic and semiconducting oxides. In addition, future outlook in this particular field as well as different impacts on biology and medicine are addressed. PMID:23627064

  13. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

    PubMed Central

    Reis, Wieland G.; Weitz, R. Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-01-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production. PMID:27188435

  14. Semiconducting nanotube dominant chemical vapor deposition synthesis of isopropanol carbon feedstock

    NASA Astrophysics Data System (ADS)

    Che, Yuchi; Wang, Chuan; Liu, Jia; Lin, Xue; Wong, H.-S. Philip; Zhou, Chongwu

    2012-02-01

    The development of guided chemical vapor deposition (CVD) growth of single wall carbon nanotubes provides great platform for wafer-scale integration of aligned nanotube into circuits and systems. However, the co-existence of the metallic and semiconducting nanotubes is still a major problem for the development of carbon nanotube based nanoelectronics. To address this limitation, we developed a method to get semiconducting dominant nanotube by using isopropanol carbon feedstock. We achieved a purity of 87% of semiconducting nanotube growth, which was verified by measuring single nanotube transistors fabricated from aligned nanotube arrays. Besides, Raman spectrum was characterized to confirm the enhanced fraction of semiconducting nanotube as well. To further understand chemical mechanism of synthesis at atomic level, we performed the mass spectrum study and compared the measurement results from different carbon source. Furthermore, to discuss the future application of this synthesis method, we fabricated thin-film transistor from as-grown nanotube network. Transistor with on/off ratio over 104 and mobility up to 116 cm2/vs was achieved, which shows great potential for thin-film transistor applications.

  15. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

    NASA Astrophysics Data System (ADS)

    Reis, Wieland G.; Weitz, R. Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-05-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.

  16. Determining the nature of the gap in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Prestigiacomo, J. C.; Nath, A.; Osofsky, M. S.; Hernández, S. C.; Wheeler, V. D.; Walton, S. G.; Gaskill, D. K.

    2017-02-01

    Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap.

  17. Determining the nature of the gap in semiconducting graphene

    PubMed Central

    Prestigiacomo, J. C.; Nath, A.; Osofsky, M. S.; Hernández, S. C.; Wheeler, V. D.; Walton, S. G.; Gaskill, D. K.

    2017-01-01

    Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap. PMID:28181521

  18. Determining the nature of the gap in semiconducting graphene.

    PubMed

    Prestigiacomo, J C; Nath, A; Osofsky, M S; Hernández, S C; Wheeler, V D; Walton, S G; Gaskill, D K

    2017-02-09

    Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap.

  19. High-performance partially aligned semiconductive single-walled carbon nanotube transistors achieved with a parallel technique.

    PubMed

    Wang, Yilei; Pillai, Suresh Kumar Raman; Chan-Park, Mary B

    2013-09-09

    Single-walled carbon nanotubes (SWNTs) are widely thought to be a strong contender for next-generation printed electronic transistor materials. However, large-scale solution-based parallel assembly of SWNTs to obtain high-performance transistor devices is challenging. SWNTs have anisotropic properties and, although partial alignment of the nanotubes has been theoretically predicted to achieve optimum transistor device performance, thus far no parallel solution-based technique can achieve this. Herein a novel solution-based technique, the immersion-cum-shake method, is reported to achieve partially aligned SWNT networks using semiconductive (99% enriched) SWNTs (s-SWNTs). By immersing an aminosilane-treated wafer into a solution of nanotubes placed on a rotary shaker, the repetitive flow of the nanotube solution over the wafer surface during the deposition process orients the nanotubes toward the fluid flow direction. By adjusting the nanotube concentration in the solution, the nanotube density of the partially aligned network can be controlled; linear densities ranging from 5 to 45 SWNTs/μm are observed. Through control of the linear SWNT density and channel length, the optimum SWNT-based field-effect transistor devices achieve outstanding performance metrics (with an on/off ratio of ~3.2 × 10(4) and mobility 46.5 cm(2) /Vs). Atomic force microscopy shows that the partial alignment is uniform over an area of 20 × 20 mm(2) and confirms that the orientation of the nanotubes is mostly along the fluid flow direction, with a narrow orientation scatter characterized by a full width at half maximum (FWHM) of <15° for all but the densest film, which is 35°. This parallel process is large-scale applicable and exploits the anisotropic properties of the SWNTs, presenting a viable path forward for industrial adoption of SWNTs in printed, flexible, and large-area electronics.

  20. Silicon-organic hybrid devices

    NASA Astrophysics Data System (ADS)

    Alloatti, L.; Korn, D.; Pfeifle, J.; Palmer, R.; Koeber, S.; Baier, M.; Schmogrow, R.; Diebold, Sebastian; Pahl, P.; Zwick, T.; Yu, H.; Bogaerts, W.; Baets, R.; Fournier, M.; Fedeli, J.; Dinu, R.; Koos, C.; Freude, W.; Leuthold, J.

    2013-02-01

    Silicon-organic hybrid (SOH) devices combine silicon waveguides with a number of specialized materials, ranging from third-order optically-nonlinear molecules to second-order nonlinear polymers and liquid-crystals. Second-order nonlinear materials allow building high-speed and low-voltage electro-optic modulators, which are key components for future silicon-based photonics transceivers. We report on a 90 GHz bandwidth phase modulator, and on a 56 Gbit/s QPSK experiment using an IQ Pockels effect modulator. By using liquid-crystal claddings instead, we show experimentally that phase shifters with record-low power consumption and ultra-low voltage-length product of VπL = 0.06 Vmm. Secondorder nonlinear materials, moreover, allow creating nonlinear waveguides for sum- or difference-frequency generation, and for lowest-noise optical parametric amplification. These processes are exploited for a large variety of applications, like in the emerging field of on-chip generation of mid-IR wavelengths, where pump powers are significantly smaller compared to equivalent devices using third-order nonlinear materials. In this work, we present the first SOH waveguide design suited for second-order nonlinear processes. We predict for our device an amplification of 14 dB/cm assuming a conservative χ(2)-nonlinearity of 230 pm/V and a CW pump power as low as 20 dBm.

  1. Magnetic and electron-transport properties of spin-gapless semiconducting CoFeCrAl films

    NASA Astrophysics Data System (ADS)

    Sellmyer, David; Jin, Yunlong; Kharel, Parashu; Valloppilly, Shah; George, Tom; Balasubramanian, Balamurugan; Skomski, Ralph

    Recently, spin-gapless semiconductors (SGS) with a semiconducting or insulating gap in one spin channel and zero gap in the other at the Fermi level have attracted much attention due to their new functionalities such as voltage-tunable spin polarization, the ability to switch between spin-polarized n-type and p-type conduction, high spin polarization and carrier mobility. For the development of spintronic devices utilizing SGS, it is necessary to have a better understanding of the magnetic and transport properties of the thin films of these materials. In this study, the structural, magnetic, and electron-transport properties of a SGS material CoFeCrAl in the thin film geometry have been investigated. CoFeCrAl films were grown on atomically flat SiO2 substrates using magnetron sputtering. The Curie temperature was measured to be 550 K very close to the value reported for bulk CoFeCrAl. Electron-transport measurements on the oriented films revealed a negative temperature coefficient of resistivity, small anomalous Hall conductivity and linear field dependence of magnetoresistance, which are transport signatures of SGS. The effect of elemental compositions and structural ordering on the SGS properties of the CoFeCrAl films will be discussed. Research supported by NSF (Y. J.), DoE (B. B., D. J. S), ARO (T. A. G., S. R. V.), SDSU (P. K.), and NRI (Facilities).

  2. Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching.

    PubMed

    James, Teena; Kalinin, Yevgeniy V; Chan, Chih-Chieh; Randhawa, Jatinder S; Gaevski, Mikhail; Gracias, David H

    2012-07-11

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes are known to modulate ionic transport through gated modification of pore surface charge, the fabrication of conical nanopores in silicon (Si) has proven challenging. Here, we report the discovery that gold (Au) nanoparticle (NP)-assisted plasma etching results in the formation of conical etch profiles in Si. These conical profiles result due to enhanced Si etch rates in the vicinity of the Au NPs. We show that this process provides a convenient and versatile means to fabricate conical nanopores in Si membranes and crystals with variable pore-diameters and cone-angles. We investigated ionic transport through these pores and observed that rectification ratios could be enhanced by a factor of over 100 by voltage gating alone, and that these pores could function as ionic switches with high on-off ratios of approximately 260. Further, we demonstrate voltage gated control over protein transport, which is of importance in lab-on-a-chip devices and biomolecular separations.

  3. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions

    NASA Astrophysics Data System (ADS)

    Qin, Ruifeng; Cao, Hongtao; Liang, Lingyan; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif; Liu, Caichi; Sun, Weizhong

    2016-04-01

    ZnSnN2 is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN2 films with a low electron concentration, in order to promote the applications of ZnSnN2 as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN2 films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN2 p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 1017 to 6.78 × 1017 cm-3 and from 0.37 to 2.07 cm2 V-1 s-1, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 103. The achievement of this ZnSnN2-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN2 material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  4. Transition of single-walled carbon nanotubes from metallic to semiconducting in field-effect transistors by hydrogen plasma treatment.

    PubMed

    Zheng, Gang; Li, Qunqing; Jiang, Kaili; Zhang, Xiaobo; Chen, Jia; Ren, Zheng; Fan, Shoushan

    2007-06-01

    We report hydrogen plasma treatment results on converting the metallic single-walled carbon nanotubes to semiconducting single-walled carbon nanotubes. We found that the as-grown single-walled carbon nanotubes (SWNTs) can be sorted as three groups which behave as metallic, as-metallic, and semiconducting SWNTs. These three groups have different changes under hydrogen plasma treatment and successive annealing process. The SWNTs can be easily hydrogenated in the hydrogen plasma environment and the as-metallic SWNTs can be transformed to semiconducting SWNTs. The successive annealing process can break the C-H bond, so the conversion is reversible.

  5. Nonlinear optical inves

    NASA Astrophysics Data System (ADS)

    Zidan, M. D.; Arfan, A.; Allahham, A.

    2017-03-01

    Z-scan technique was used to investigate the nonlinear optical properties of Quinine and 1-(carboxymethyl)-6-methoxy-4-(3-(3-vinylpiperidin-4-yl) propanoyl) quinolin-1-ium chloride (Quinotoxine) salts. The two salts were characterized using UV-visible, FTIR and NMR measurements. The characterization spectra confirm the expected molecular structure of the prepared "Quinotoxine " salt. The z-scan measurements were performed with a CW Diode laser at 635 nm wavelength and 26 mW power. The nonlinear absorption coefficient (β), nonlinear refractive index (n2), the ground-state absorption cross sections (σg), the excited-state absorption cross sections (σex) and thermo-optic coefficient of the samples were determined. Our results reveal that the σex is higher than the σg indicating that the reverse saturable absorption (RSA) is the dominating mechanism for the observed absorption nonlinearities. The results suggest that this material should be considered as a promising candidate for future optical devices applications.

  6. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Harris, M. T.; George, Michael A.; McCarty, P.

    1999-01-01

    As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness

  7. Magneto-optical absorption in semiconducting spherical quantum dots: Influence of the dot-size, confining potential, and magnetic field

    SciTech Connect

    Kushwaha, Manvir S.

    2014-12-15

    Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level

  8. Magneto-optical absorption in semiconducting spherical quantum dots: Influence of the dot-size, confining potential, and magnetic field

    NASA Astrophysics Data System (ADS)

    Kushwaha, Manvir S.

    2014-12-01

    Semiconducting quantum dots - more fancifully dubbed artificial atoms - are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement - or the lack of any degree of freedom for the electrons (and/or holes) - in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines' random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level transitions are seen

  9. Harmonic Phase Response of Nonlinear Radar Targets

    DTIC Science & Technology

    2015-10-01

    ARL-TR-7513 ● OCT 2015 US Army Research Laboratory Harmonic Phase Response of Nonlinear Radar Targets by Sean F McGowan, Dr...Laboratory Harmonic Phase Response of Nonlinear Radar Targets by Sean F McGowan and Kelly D Sherbondy Sensors and Electron Devices Directorate...

  10. Nonlinear graphene plasmonics (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Cox, Joel D.; Marini, Andrea; Garcia de Abajo, Javier F.

    2016-09-01

    The combination of graphene's intrinsically-high nonlinear optical response with its ability to support long-lived, electrically tunable plasmons that couple strongly with light has generated great expectations for application of the atomically-thin material to nanophotonic devices. These expectations are mainly reinforced by classical analyses performed using the response derived from extended graphene, neglecting finite-size and nonlocal effects that become important when the carbon layer is structured on the nanometer scale in actual device designs. Based on a quantum-mechanical description of graphene using tight-binding electronic states combined with the random-phase approximation, we show that finite-size effects produce large contributions that increase the nonlinear response associated with plasmons in nanostructured graphene to significantly higher levels than previously thought, particularly in the case of Kerr-type optical nonlinearities. Motivated by this finding, we discuss and compare saturable absorption in extended and nanostructured graphene, with or without plasmonic enhancement, within the context of passive mode-locking for ultrafast lasers. We also explore the possibility of high-harmonic generation in doped graphene nanoribbons and nanoislands, where illumination by an infrared pulse of moderate intensity, tuned to a plasmon resonance, is predicted to generate light at harmonics of order 13 or higher, extending over the visible and UV regimes. Our atomistic description of graphene's nonlinear optical response reveals its complex nature in both extended and nanostructured systems, while further supporting the exceptional potential of this material for nonlinear nanophotonic devices.

  11. Semiconducting properties of layered cadmium sulphide-based hybrid nanocomposites

    PubMed Central

    2011-01-01

    A series of hybrid cadmium salt/cationic surfactant layered nanocomposites containing different concentrations of cadmium sulphide was prepared by exchanging chloride by sulphide ions in the layered precursor CdXx(OH)y(CnTA)z in a solid phase/gas reaction, resulting in a series of layered species exhibiting stoichiometries corresponding to CdSvXx(OH)y(CnTA)z, constituted by two-dimensional CdCl2/CdS ultra-thin sheets sandwiched between two self-assembled surfactant layers. The electronic structure of CdS in the nanocomposite is similar to that of bulk, but showing the expected features of two-dimensional confinement of the semiconductor. The nanocomposite band gap is found to depend in a non-linear manner on both the length of the hydrocarbon chain of the surfactant and the concentration of the sulphide in the inorganic sheet. The products show photocatalytic activity at least similar and usually better than that of "bulk" CdS in a factor of two. PMID:21896162

  12. Semiconducting properties of layered cadmium sulphide-based hybrid nanocomposites

    NASA Astrophysics Data System (ADS)

    López-Cabaña, Zoraya; Marfa Sotomayor Torres, Clivia; González, Guillermo

    2011-09-01

    A series of hybrid cadmium salt/cationic surfactant layered nanocomposites containing different concentrations of cadmium sulphide was prepared by exchanging chloride by sulphide ions in the layered precursor CdX x (OH) y (CnTA) z in a solid phase/gas reaction, resulting in a series of layered species exhibiting stoichiometries corresponding to CdS v X x (OH) y (CnTA) z , constituted by two-dimensional CdCl2/CdS ultra-thin sheets sandwiched between two self-assembled surfactant layers. The electronic structure of CdS in the nanocomposite is similar to that of bulk, but showing the expected features of two-dimensional confinement of the semiconductor. The nanocomposite band gap is found to depend in a non-linear manner on both the length of the hydrocarbon chain of the surfactant and the concentration of the sulphide in the inorganic sheet. The products show photocatalytic activity at least similar and usually better than that of "bulk" CdS in a factor of two.

  13. Radio Frequency Tunable Oscillator Device Based on a SmB_{6} Microcrystal.

    PubMed

    Stern, Alex; Efimkin, Dmitry K; Galitski, Victor; Fisk, Zachary; Xia, Jing

    2016-04-22

    Radio frequency tunable oscillators are vital electronic components for signal generation, characterization, and processing. They are often constructed with a resonant circuit and a "negative" resistor, such as a Gunn diode, involving complex structure and large footprints. Here we report that a piece of SmB_{6}, 100  μm in size, works as a current-controlled oscillator in the 30 MHz frequency range. SmB_{6} is a strongly correlated Kondo insulator that was recently found to have a robust surface state likely to be protected by the topology of its electronics structure. We exploit its nonlinear dynamics, and demonstrate large ac voltage outputs with frequencies from 20 Hz to 30 MHz by adjusting a small dc bias current. The behaviors of these oscillators agree well with a theoretical model describing the thermal and electronic dynamics of coupled surface and bulk states. With reduced crystal size we anticipate the device to work at higher frequencies, even in the THz regime. This type of oscillator might be realized in other materials with a metallic surface and a semiconducting bulk.

  14. Nanophotonic Devices in Silicon for Nonlinear Optics

    DTIC Science & Technology

    2010-10-15

    Leuthold, W. Freude , J.-M. Brosi, R. Baets, P. Dumon, I. Biaggio, M. L. Scimeca, F. Diederich, B. Frank, and C. Koos, “Silicon Organic Hybrid Technology...2010. [24] L. Alloatti, D. Korn, D. Hillerkuss, T. Vallaitis, J. Li,R. Bonk, R. Palmer, T. Schellinger, C. Koos,W. Freude , J. Leuthold, A. Barklund, R...T. Michinobu, F. Diederich, W. Freude , and J. Leuthold, “All-optical high-speed signal processing with silicon–organic hybrid slot waveguides

  15. Continuous control of the nonlinearity phase for harmonic generations.

    PubMed

    Li, Guixin; Chen, Shumei; Pholchai, Nitipat; Reineke, Bernhard; Wong, Polis Wing Han; Pun, Edwin Yue Bun; Cheah, Kok Wai; Zentgraf, Thomas; Zhang, Shuang

    2015-06-01

    The capability of locally engineering the nonlinear optical properties of media is crucial in nonlinear optics. Although poling is the most widely employed technique for achieving locally controlled nonlinearity, it leads only to a binary nonlinear state, which is equivalent to a discrete phase change of π in the nonlinear polarizability. Here, inspired by the concept of spin-rotation coupling, we experimentally demonstrate nonlinear metasurfaces with homogeneous linear optical properties but spatially varying effective nonlinear polarizability with continuously controllable phase. The continuous phase control over the local nonlinearity is demonstrated for second and third harmonic generation by using nonlinear metasurfaces consisting of nanoantennas of C3 and C4 rotational symmetries, respectively. The continuous phase engineering of the effective nonlinear polarizability enables complete control over the propagation of harmonic generation signals. Therefore, this method seamlessly combines the generation and manipulation of harmonic waves, paving the way for highly compact nonlinear nanophotonic devices.

  16. Nonlinear channelizer.

    PubMed

    In, Visarath; Longhini, Patrick; Kho, Andy; Neff, Joseph D; Leung, Daniel; Liu, Norman; Meadows, Brian K; Gordon, Frank; Bulsara, Adi R; Palacios, Antonio

    2012-12-01

    The nonlinear channelizer is an integrated circuit made up of large parallel arrays of analog nonlinear oscillators, which, collectively, serve as a broad-spectrum analyzer with the ability to receive complex signals containing multiple frequencies and instantaneously lock-on or respond to a received signal in a few oscillation cycles. The concept is based on the generation of internal oscillations in coupled nonlinear systems that do not normally oscillate in the absence of coupling. In particular, the system consists of unidirectionally coupled bistable nonlinear elements, where the frequency and other dynamical characteristics of the emergent oscillations depend on the system's internal parameters and the received signal. These properties and characteristics are being employed to develop a system capable of locking onto any arbitrary input radio frequency signal. The system is efficient by eliminating the need for high-speed, high-accuracy analog-to-digital converters, and compact by making use of nonlinear coupled systems to act as a channelizer (frequency binning and channeling), a low noise amplifier, and a frequency down-converter in a single step which, in turn, will reduce the size, weight, power, and cost of the entire communication system. This paper covers the theory, numerical simulations, and some engineering details that validate the concept at the frequency band of 1-4 GHz.

  17. Nonlinear metamaterials for holography

    NASA Astrophysics Data System (ADS)

    Almeida, Euclides; Bitton, Ora; Prior, Yehiam

    2016-08-01

    A hologram is an optical element storing phase and possibly amplitude information enabling the reconstruction of a three-dimensional image of an object by illumination and scattering of a coherent beam of light, and the image is generated at the same wavelength as the input laser beam. In recent years, it was shown that information can be stored in nanometric antennas giving rise to ultrathin components. Here we demonstrate nonlinear multilayer metamaterial holograms. A background free image is formed at a new frequency--the third harmonic of the illuminating beam. Using e-beam lithography of multilayer plasmonic nanoantennas, we fabricate polarization-sensitive nonlinear elements such as blazed gratings, lenses and other computer-generated holograms. These holograms are analysed and prospects for future device applications are discussed.

  18. Nonlinear metamaterials for holography

    PubMed Central

    Almeida, Euclides; Bitton, Ora

    2016-01-01

    A hologram is an optical element storing phase and possibly amplitude information enabling the reconstruction of a three-dimensional image of an object by illumination and scattering of a coherent beam of light, and the image is generated at the same wavelength as the input laser beam. In recent years, it was shown that information can be stored in nanometric antennas giving rise to ultrathin components. Here we demonstrate nonlinear multilayer metamaterial holograms. A background free image is formed at a new frequency—the third harmonic of the illuminating beam. Using e-beam lithography of multilayer plasmonic nanoantennas, we fabricate polarization-sensitive nonlinear elements such as blazed gratings, lenses and other computer-generated holograms. These holograms are analysed and prospects for future device applications are discussed. PMID:27545581

  19. Nonlinear terahertz superconducting plasmonics

    NASA Astrophysics Data System (ADS)

    Wu, Jingbo; Zhang, Caihong; Liang, Lanju; Jin, Biaobing; Kawayama, Iwao; Murakami, Hironaru; Kang, Lin; Xu, Weiwei; Wang, Huabing; Chen, Jian; Tonouchi, Masayoshi; Wu, Peiheng

    2014-10-01

    Nonlinear terahertz (THz) transmission through subwavelength hole array in superconducting niobium nitride (NbN) film is experimentally investigated using intense THz pulses. The good agreement between the measurement and numerical simulations indicates that the field strength dependent transmission mainly arises from the nonlinear properties of the superconducting film. Under weak THz pulses, the transmission peak can be tuned over a frequency range of 145 GHz which is attributed to the high kinetic inductance of 50 nm-thick NbN film. Utilizing the THz pump-THz probe spectroscopy, we study the dynamic process of transmission spectra and demonstrate that the transition time of such superconducting plasmonic device is within 5 ps.

  20. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

    DOEpatents

    Abraham, Marvin M.; Chen, Yok; Kernohan, Robert H.

    1981-01-01

    This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

  1. Surface Chemistry of Semiconducting Quantum Dots: Theoretical Perspectives.

    PubMed

    Kilina, Svetlana V; Tamukong, Patrick K; Kilin, Dmitri S

    2016-10-18

    Colloidal quantum dots (QDs) are near-ideal nanomaterials for energy conversion and lighting technologies. However, their photophysics exhibits supreme sensitivity to surface passivation and defects, of which control is problematic. The role of passivating ligands in photodynamics remains questionable and is a focus of ongoing research. The optically forbidden nature of surface-associated states makes direct measurements on them challenging. Therefore, computational modeling is imperative for insights into surface passivation and its impact on light-driven processes in QDs. This Account discusses challenges and recent progress in understanding surface effects on the photophysics of QDs addressed via quantum-chemical calculations. We overview different methods, including the effective mass approximation (EMA), time-dependent density functional theory (TDDFT), and multiconfiguration approaches, considering their strengths and weaknesses relevant to modeling of QDs with a complicated surface. We focus on CdSe, PbSe, and Si QDs, where calculations successfully explain experimental trends sensitive to surface defects, doping, and ligands. We show that the EMA accurately describes both linear and nonlinear optical properties of large-sized CdSe QDs (>2.5 nm), while TDDFT is required for smaller QDs where surface effects dominate. Both approaches confirm efficient two-photon absorption enabling applications of QDs as nonlinear optical materials. TDDFT also describes the effects of morphology on the optical response of QDs: the photophysics of stoichiometric, magic-sized XnYn (X = Cd, Pb; Y = S, Se) QDs is less sensitive to their passivation compared with nonstoichiometric Xn≠mYm QDs. In the latter, surface-driven optically inactive midgap states can be eliminated by anionic ligands, explaining the better emission of metal-enriched QDs compared with nonmetal-enriched QDs. Ideal passivation of magic-sized QDs by amines and phosphine oxides leaves lower-energy transitions

  2. Nonlinear waves: Dynamics and evolution

    NASA Astrophysics Data System (ADS)

    Gaponov-Grekhov, A. V.; Rabinovich, M. I.

    Papers on nonlinear waves are presented, covering topics such as the history of studies on nonlinear dynamics since Poincare, attractors, pattern formation and the dynamics of two-dimensional structures in nonequilibirum dissipative media, the onset of spatial chaos in one-dimensional systems, and self-organization phenomena in laser thermochemistry. Additional topics include criteria for the existence of moving structures in two-component reaction-diffusion systems, space-time structures in optoelectronic devices, stimulated scattering and surface structures, and distributed wave collapse in the nonlinear Schroedinger equation. Consideration is also given to dimensions and entropies in multidimensional systems, measurement methods for correlation dimensions, quantum localization and dynamic chaos, self-organization in bacterial cells and populations, nonlinear phenomena in condensed matter, and the origin and evolutionary dynamics of Uranian rings.

  3. Empirical Equation Based Chirality (n, m) Assignment of Semiconducting Single Wall Carbon Nanotubes from Resonant Raman Scattering Data

    PubMed Central

    Arefin, Md Shamsul

    2012-01-01

    This work presents a technique for the chirality (n, m) assignment of semiconducting single wall carbon nanotubes by solving a set of empirical equations of the tight binding model parameters. The empirical equations of the nearest neighbor hopping parameters, relating the term (2n− m) with the first and second optical transition energies of the semiconducting single wall carbon nanotubes, are also proposed. They provide almost the same level of accuracy for lower and higher diameter nanotubes. An algorithm is presented to determine the chiral index (n, m) of any unknown semiconducting tube by solving these empirical equations using values of radial breathing mode frequency and the first or second optical transition energy from resonant Raman spectroscopy. In this paper, the chirality of 55 semiconducting nanotubes is assigned using the first and second optical transition energies. Unlike the existing methods of chirality assignment, this technique does not require graphical comparison or pattern recognition between existing experimental and theoretical Kataura plot.

  4. Dielectrophoretic Assembly of Semiconducting Carbon Nanotubes Separated and Enriched by Spin Column Chromatography and Its Application to Gas Sensing

    NASA Astrophysics Data System (ADS)

    Nakano, Michihiko; Fujioka, Masahiro; Mai, Kaori; Watanabe, Hideaki; Martin, Yul; Suehiro, Junya

    2012-04-01

    The present authors have previously demonstrated the electrokinetic fabrication of a single-walled carbon nanotube (SWCNT) gas sensor by employing dielectrophoresis. Because this method employs mass-produced SWCNTs, it can realize cheaper and more flexible SWCNT gas sensor fabrication than that based on the on-site synthesis of SWCNTs. In this study, a new protocol was proposed and tested for the separation and enrichment of semiconducting SWCNTs, aiming to improve the SWCNT gas sensor sensitivity. The protocol employed a spin column filled with size-exclusion dextran-based gel beads as well as two surfactants (sodium dodecyl sulfate and sodium deoxycholate), which had different affinities to metallic and semiconducting SWCNTs. The separation and enrichment of the semiconducting SWCNTs were confirmed by measuring their optical and electrical properties. The CNT gas sensor fabricated using enriched semiconducting SWCNTs was highly sensitive to nitrogen dioxide (NO2) gas, - more sensitive by 10 times than that fabricated using the pristine SWCNT mixture.

  5. Photoelectric Property Modulation by Nanoconfinement in the Longitude Direction of Short Semiconducting Nanorods.

    PubMed

    Tang, Chaolong; Jiang, Chengming; Bi, Sheng; Song, Jinhui

    2016-05-04

    Photoelectric property change in half-dimensional (0.5D) semiconducting nanomaterials as a function of illumination light intensity and materials geometry has been systematically studied. Through two independent methods, conductive atomic force microscopy (C-AFM) direct current-voltage acquisition and scanning kelvin probe microscopy (SKPM) surface potential mapping, photoelectric property of 0.5D ZnO nanomaterial has been characterized with exceptional behaviors compared with bulk/micro/one-dimensional (1D) nanomaterial. A new model by considering surface effect, quantum effect, and illumination effect has been successfully built, which could more accurately predict the photoelectric characteristics of 0.5D semiconducting nanomaterials. The findings reported in this study could potentially impact three-dimensional (3D) photoelectronics.

  6. Technique for Determining the Viscosity and Electrical Conductivity of Semiconducting Liquids

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C. H.; Lehoczky, S. L.; Feth, S.; Zhu, S.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    A novel apparatus for determining the viscosity and electrical conductivity of semiconducting liquids has been developed at NASA/MSFC. The apparatus is based on the transient torque technique and utilizes a 125 micrometer diameter quartz fiber as a torsion wire and a sensitive angular detector to measure the deflection angle of the crucible containing the liquid. A rotating flow is induced in the semiconducting melt by the application of a rotating magnetic field and measurement of the magnitude and transient behavior of the induced deflection angle allows the simultaneous determination of the viscosity and electrical conductivity of the melt. Measurements at room temperature and up to 900 C were made on high purity melts.

  7. Origin of weak ferroelectricity in semiconductive Sb2S3 crystal

    NASA Astrophysics Data System (ADS)

    Žigas, Leonardas; Audzijonis, Algirdas; Grigas, Jonas

    2017-02-01

    The paper presents the results of the investigations of electronic potential dependencies upon the normal co-ordinates of B1u mode in a large temperature range for the Sb2S3 crystal. The results revealed high anharmonicity of Sb and S atoms in this highly covalent semiconductive compound and B1u - mode polar distortion with temperature leading to appearance of weak ferroelectricity.

  8. Synthesis modified structural and dielectric properties of semiconducting zinc ferrospinels

    NASA Astrophysics Data System (ADS)

    Kumari, N.; Kumar, V.; Singh, S. K.; Khasa, S.; Dahiya, M. S.

    2017-02-01

    The influence of preparation techniques on structural and dielectric properties of ZnCrxFe1-xO4 (x=0, 0.1 abbreviated as Z and ZC) ferrite nano-particles synthesized using chemical co-precipitation (CCP), sol-gel (SG) and solid state reaction (SS) techniques is discussed. XRD profiles are used to confirm the single phase spinel ferrite formation. TEM images indicate the change in size and shape of particles on changing either the composition or the synthesis methodology. The TEM micrograph of samples obtained through CCP shows uniform particle size formation compared to those obtained through SG and SS. Sample prepared through CCP possess porosity >70% making these materials suitable for sensing applications. The dielectric loss, dielectric constant and ac conductivity are analyzed as a function of frequency, temperature and composition using impedance spectroscopy. A universal dielectric behavior has been predicted through temperature and frequency variations of different parameters. Dielectric constant is found to possess highest value for sample synthesized through SG which marks the possibility of using the SG derived ferrospinels as microwave device components.

  9. Topological Crystalline Insulator in a New Bi Semiconducting Phase

    PubMed Central

    Munoz, F.; Vergniory, M. G.; Rauch, T.; Henk, J.; Chulkov, E. V.; Mertig, I.; Botti, S.; Marques, M. A. L.; Romero, A. H.

    2016-01-01

    Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = −2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation. PMID:26905601

  10. Two-dimensional exciton properties in monolayer semiconducting phosphorus allotropes.

    PubMed

    Villegas, Cesar E P; Rodin, A S; Carvalho, Alexandra; Rocha, A R

    2016-10-12

    Excitons play a key role in technological applications since they have a strong influence on determining the efficiency of photovoltaic devices. Recently, it has been shown that the allotropes of phosphorus possess an optical band gap that can be tuned over a wide range of values including the near-infrared and visible spectra, which would make them promising candidates for optoelectronic applications. In this work we carry out ab initio many-body perturbation theory calculations to study the excitonic effects on the optical properties of two-dimensional phosphorus allotropes: the case of blue and black monolayers. We elucidate the most relevant optical transitions, exciton binding energy spectrum as well as real-space exciton distribution, particularly focusing on the absorption spectrum dependence on the incident light polarization. In addition, based on our results, we use a set of effective hydrogenic models, in which the electron-hole Coulomb interaction is included to estimate exciton binding energies and radii. Our results show an excellent agreement between the many-body methodology and the effective models.

  11. Semiconducting properties of Al doped ZnO thin films.

    PubMed

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  12. Nonlinear Systems.

    ERIC Educational Resources Information Center

    Seider, Warren D.; Ungar, Lyle H.

    1987-01-01

    Describes a course in nonlinear mathematics courses offered at the University of Pennsylvania which provides an opportunity for students to examine the complex solution spaces that chemical engineers encounter. Topics include modeling many chemical processes, especially those involving reaction and diffusion, auto catalytic reactions, phase…

  13. Nonlinear Acoustics

    DTIC Science & Technology

    1974-02-14

    Wester- velt. [60] Streaming. In 1831, Michael Faraday [61] noted that currents of air were set up in the neighborhood of vibrating plates-the first... ducei in the case of a paramettc amy (from Berktay an Leahy 141). C’ "". k•, SEC 10.1 NONLINEAR ACOUSTICS 345 The principal results of their analysis

  14. Nonlinear resonance

    NASA Astrophysics Data System (ADS)

    Kevorkian, J.

    This report discusses research in the area of slowly varying nonlinear oscillatory systems. Some of the topics discussed are as follows: adiabatic invariants and transient resonance in very slowly varying Hamiltonian systems; sustained resonance in very slowly varying Hamiltonian systems; free-electron lasers with very slow wiggler taper; and bursting oscillators.

  15. Semiconducting polymer nanoparticles as photoacoustic molecular imaging probes in living mice.

    PubMed

    Pu, Kanyi; Shuhendler, Adam J; Jokerst, Jesse V; Mei, Jianguo; Gambhir, Sanjiv S; Bao, Zhenan; Rao, Jianghong

    2014-03-01

    Photoacoustic imaging holds great promise for the visualization of physiology and pathology at the molecular level with deep tissue penetration and fine spatial resolution. To fully utilize this potential, photoacoustic molecular imaging probes have to be developed. Here, we introduce near-infrared light absorbing semiconducting polymer nanoparticles as a new class of contrast agents for photoacoustic molecular imaging. These nanoparticles can produce a stronger signal than the commonly used single-walled carbon nanotubes and gold nanorods on a per mass basis, permitting whole-body lymph-node photoacoustic mapping in living mice at a low systemic injection mass. Furthermore, the semiconducting polymer nanoparticles possess high structural flexibility, narrow photoacoustic spectral profiles and strong resistance to photodegradation and oxidation, enabling the development of the first near-infrared ratiometric photoacoustic probe for in vivo real-time imaging of reactive oxygen species--vital chemical mediators of many diseases. These results demonstrate semiconducting polymer nanoparticles to be an ideal nanoplatform for developing photoacoustic molecular probes.

  16. Real function of semiconducting polymer in GaAs/polymer planar heterojunction solar cells.

    PubMed

    Yan, Liang; You, Wei

    2013-08-27

    We systematically investigated GaAs/polymer hybrid solar cells in a simple planar junction, aiming to fundamentally understand the function of semiconducting polymers in GaAs/polymer-based heterojunction solar cells. A library of semiconducting polymers with different band gaps and energy levels were evaluated in GaAs/polymer planar heterojunctions. The optimized thickness of the active polymer layer was discovered to be ultrathin (~10 nm). Further, the open-circuit voltage (Voc) of such GaAs/polymer planar heterojunctions was fixed around 0.6 V, regardless of the HOMO energy level of the polymer employed. On the basis of this evidence and others, we conclude that n-type GaAs/polymer planar heterojunctions are not type II heterojunctions as originally assumed. Instead, n-type GaAs forms a Schottky barrier with its corresponding anode, while the semiconducting polymer of appropriate energy levels can function as hole transport layer and/or electron blocking layer. Additionally, we discover that both GaAs surface passivation and thermal annealing can improve the performance of GaAs/polymer hybrid solar cells.

  17. Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation

    PubMed Central

    Reis, Wieland G.; Tomović, Željko; Weitz, R. Thomas; Krupke, Ralph; Mikhael, Jules

    2017-01-01

    The potential of single–walled carbon nanotubes (SWCNTs) to outperform silicon in electronic application was finally enabled through selective separation of semiconducting nanotubes from the as-synthesized statistical mix with polymeric dispersants. Such separation methods provide typically high semiconducting purity samples with narrow diameter distribution, i.e. almost single chiralities. But for a wide range of applications high purity mixtures of small and large diameters are sufficient or even required. Here we proof that weak field centrifugation is a diameter independent method for enrichment of semiconducting nanotubes. We show that the non-selective and strong adsorption of polyarylether dispersants on nanostructured carbon surfaces enables simple separation of diverse raw materials with different SWCNT diameter. In addition and for the first time, we demonstrate that increased temperature enables higher purity separation. Furthermore we show that the mode of action behind this electronic enrichment is strongly connected to both colloidal stability and protonation. By giving simple access to electronically sorted SWCNTs of any diameter, the wide dynamic range of weak field centrifugation can provide economical relevance to SWCNTs. PMID:28317942

  18. Production of semiconducting gold-DNA nanowires by application of DC bias.

    PubMed

    Joshi, Rakesh K; West, Leigh; Kumar, Amrita; Joshi, Nidhi; Alwarappan, Subbiah; Kumar, Ashok

    2010-05-07

    There is considerable interest in using DNA nanowires or nanotubes in a wide variety of bioelectronic applications and microcircuitry. Various methods have been developed to construct DNA nanostructures. Here, we report a novel method to construct semiconducting DNA nanowires by applying a suitable DC bias to a gold plating solution containing double-stranded DNA. The self-assembled nanowires fabricated by this method contain attached gold nanoparticles. Further, we report that the dimensions of the nanowires can be easily manipulated by altering the applied DC bias. We also confirmed the semiconducting nature of the DNA nanowires by studying their resistance-temperature behavior from 25 to 65 degrees C in a microelectrode system. These studies describe a simple process by which gold-decorated, semiconducting DNA nanowires could be created and may lead to a breakthrough in the field of self-assembly of nanometer-scale circuits. The self-assembled structures do have some similarity with tube-like structures but in the present work we are using the term 'DNA nanowires' to define the structures.

  19. Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation

    NASA Astrophysics Data System (ADS)

    Reis, Wieland G.; Tomović, Željko; Weitz, R. Thomas; Krupke, Ralph; Mikhael, Jules

    2017-03-01

    The potential of single–walled carbon nanotubes (SWCNTs) to outperform silicon in electronic application was finally enabled through selective separation of semiconducting nanotubes from the as-synthesized statistical mix with polymeric dispersants. Such separation methods provide typically high semiconducting purity samples with narrow diameter distribution, i.e. almost single chiralities. But for a wide range of applications high purity mixtures of small and large diameters are sufficient or even required. Here we proof that weak field centrifugation is a diameter independent method for enrichment of semiconducting nanotubes. We show that the non-selective and strong adsorption of polyarylether dispersants on nanostructured carbon surfaces enables simple separation of diverse raw materials with different SWCNT diameter. In addition and for the first time, we demonstrate that increased temperature enables higher purity separation. Furthermore we show that the mode of action behind this electronic enrichment is strongly connected to both colloidal stability and protonation. By giving simple access to electronically sorted SWCNTs of any diameter, the wide dynamic range of weak field centrifugation can provide economical relevance to SWCNTs.

  20. Assembling semiconducting molecules by covalent attachment to a lamellar crystalline polymer substrate

    PubMed Central

    Machatschek, Rainhard; Ortmann, Patrick; Reiter, Renate; Mecking, Stefan

    2016-01-01

    Summary We have investigated the potential of polymers containing precisely spaced side-branches for thin film applications, particularly in the context of organic electronics. Upon crystallization, the side-branches were excluded from the crystalline core of a lamellar crystal. Thus, the surfaces of these crystals were covered by side-branches. By using carboxyl groups as side-branches, which allow for chemical reactions, we could functionalize the crystal with semiconducting molecules. Here, we compare properties of crystals differing in size: small nanocrystals and large single crystals. By assembling nanocrystals on a Langmuir trough, large areas could be covered by monolayers consisting of randomly arranged nanocrystals. Alternatively, we used a method based on local supersaturation to grow large area single crystals of the precisely side-branched polymer from solution. Attachment of the semiconducting molecules to the lamellar surface of large single crystals was possible, however, only after an appropriate annealing procedure. As a function of the duration of the grafting process, the morphology of the resulting layer of semiconducting molecules changed from patchy to compact. PMID:27335767

  1. Semiconducting polymer nanoparticles as photoacoustic molecular imaging probes in living mice

    NASA Astrophysics Data System (ADS)

    Pu, Kanyi; Shuhendler, Adam J.; Jokerst, Jesse V.; Mei, Jianguo; Gambhir, Sanjiv S.; Bao, Zhenan; Rao, Jianghong

    2014-03-01

    Photoacoustic imaging holds great promise for the visualization of physiology and pathology at the molecular level with deep tissue penetration and fine spatial resolution. To fully utilize this potential, photoacoustic molecular imaging probes have to be developed. Here, we introduce near-infrared light absorbing semiconducting polymer nanoparticles as a new class of contrast agents for photoacoustic molecular imaging. These nanoparticles can produce a stronger signal than the commonly used single-walled carbon nanotubes and gold nanorods on a per mass basis, permitting whole-body lymph-node photoacoustic mapping in living mice at a low systemic injection mass. Furthermore, the semiconducting polymer nanoparticles possess high structural flexibility, narrow photoacoustic spectral profiles and strong resistance to photodegradation and oxidation, enabling the development of the first near-infrared ratiometric photoacoustic probe for in vivo real-time imaging of reactive oxygen species--vital chemical mediators of many diseases. These results demonstrate semiconducting polymer nanoparticles to be an ideal nanoplatform for developing photoacoustic molecular probes.

  2. Growth of Homoepitaxial ZnO Semiconducting Films

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; George, M. A.; McCarty, P.

    1999-01-01

    As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

  3. Photochromic, electrochromic, photoelectrochromic and photovoltaic devices

    DOEpatents

    Kostecki, Robert; McLarnon, Frank R.

    2000-01-01

    A light activated photoelectrochromic device is formed of a two-component system formed of a photoactive charge carrier generating material and electrochromic material (plus an elecrolyte). Light interacts with a semiconductive material to generate hole-electron charge carriers which cause a redox reaction in the electrochromic material. One device is formed of hydrated nickel oxide as the electrochromic layer and polycrystalline titanium dioxide as the charge generating material. The materials may be formed as discrete layers or mixed together. Because of the direct charge transfer between the layers, a circuit to apply a voltage to drive the electrochromic reaction is not required, although one can be used to enhance the reaction. The hydrated nickel oxide-titanium dioxide materials can also be used to form a photovoltaic device for generating electricity.

  4. Carbon Based Transistors and Nanoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  5. spin pumping occurred under nonlinear spin precession

    NASA Astrophysics Data System (ADS)

    Zhou, Hengan; Fan, Xiaolong; Ma, Li; Zhou, Shiming; Xue, Desheng

    Spin pumping occurs when a pure-spin current is injected into a normal metal thin layer by an adjacent ferromagnetic metal layer undergoing ferromagnetic resonance, which can be understood as the inverse effect of spin torque, and gives access to the physics of magnetization dynamics and damping. An interesting question is that whether spin pumping occurring under nonlinear spin dynamics would differ from linear case. It is known that nonlinear spin dynamics differ distinctly from linear response, a variety of amplitude dependent nonlinear effect would present. It has been found that for spin precession angle above a few degrees, nonlinear damping term would present and dominated the dynamic energy/spin-moment dissipation. Since spin pumping are closely related to the damping process, it is interesting to ask whether the nonlinear damping term could be involved in spin pumping process. We studied the spin pumping effect occurring under nonlinear spin precession. A device which is a Pt/YIG microstrip coupled with coplanar waveguide was used. High power excitation resulted in spin precession entering in a nonlinear regime. Foldover resonance lineshape and nonlinear damping have been observed. Based on those nonlinear effects, we determined the values of the precession cone angles, and the maximum cone angle can reach a values as high as 21.5 degrees. We found that even in nonlinear regime, spin pumping is still linear, which means the nonlinear damping and foldover would not affect spin pumping process.

  6. Quantum well nonlinear microcavities

    NASA Astrophysics Data System (ADS)

    Oudar, J. L.; Kuszelewicz, R.; Sfez, B.; Pellat, D.; Azoulay, R.

    We report on recent progress in reducing the power threshold of all-optical bistable quantum well vertical microcavities. Significant improvements are achieved through an increase of the cavity finesse, together with a reduction of the device active layer thickness. A critical intensity of 5 μW/μm 2 has been observed on a microcavity of finesse 250, with a nonlinear medium of only 18 GaAs quantum wells of 10 nm thickness. Further improvements of the Bragg mirror quality resulted in a finesse of 700 and a power-lifetime product of 15 fJ/μm 2. Microresonator pixellation allows to obtain 2-dimensional arrays. A thermally-induced alloy-mixing technique is described, which produced a 110 meV carrier confinement energy, together with a refractive index change of -.012, averaged over the 2.6 μm nonlinear medium thickness. The resulting electrical and optical confinement is shown to improve the nonlinear characteristics, by limiting lateral carrier diffusion and light diffraction.

  7. On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.

    PubMed

    Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A

    2017-04-05

    In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm(2) V(-1) s(-1) ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents.

  8. Strong nonlinear focusing of light in nonlinearly controlled electromagnetic active metamaterial field concentrators

    NASA Astrophysics Data System (ADS)

    Rapoport, Yu G.; Boardman, A. D.; Grimalsky, V. V.; Ivchenko, V. M.; Kalinich, N.

    2014-05-01

    The idea of nonlinear ‘transformation optics-inspired’ [1-6] electromagnetic cylindrical field concentrators has been taken up in a preliminary manner in a number of conference reports [7-9]. Such a concentrator includes both external linear region with a dielectric constant increased towards the centre and internal region with nonlinearity characterized by constant coefficients. Then, in the process of farther investigations we realized the following factors considered neither in [7-9] nor in the recent paper [10]: saturation of nonlinearity, nonlinear losses, linear gain, numerical convergence, when nonlinear effect becomes very strong and formation of ‘hotspots’ starts. It is clearly demonstrated here that such a strongly nonlinear process starts when the nonlinear amplitude of any incident beam(s) exceeds some ‘threshold’ value. Moreover, it is shown that the formation of hotspots may start as the result of any of the following processes: an increase of the input amplitude, increasing the linear amplification in the central nonlinear region, decreasing the nonlinear losses, a decrease in the saturation of the nonlinearity. Therefore, a tendency to a formation of ‘hotspots’ is a rather universal feature of the strongly nonlinear behaviour of the ‘nonlinear resonator’ system, while at the same time the system is not sensitive to the ‘prehistory’ of approaching nonlinear threshold intensity (amplitude). The new proposed method includes a full-wave nonlinear solution analysis (in the nonlinear region), a new form of complex geometric optics (in the linear inhomogeneous external cylinder), and new boundary conditions, matching both solutions. The observed nonlinear phenomena will have a positive impact upon socially and environmentally important devices of the future. Although a graded-index concentrator is used here, it is a direct outcome of transformation optics. Numerical evaluations show that for known materials these nonlinear effects

  9. Synthesis, characterization, and transistor response of semiconducting silole polymers with substantial hole mobility and air stability. Experiment and theory.

    PubMed

    Lu, Gang; Usta, Hakan; Risko, Chad; Wang, Lian; Facchetti, Antonio; Ratner, Mark A; Marks, Tobin J

    2008-06-18

    Realizing p-channel semiconducting polymers with good hole mobility, solution processibility, and air stability is an important step forward in the chemical manipulation of charge transport in polymeric solids and in the development of low-cost printed electronics. We report here the synthesis and full characterization of the dithienosilole- and dibenzosilole-based homopolymers, poly(4,4-di-n-hexyldithienosilole) (TS6) and poly(9,9-di-n-octyldibenzosilole) (BS8), and their mono- and bithiophene copolymers, poly(4,4-di-n-hexyldithienosilole-alt-(bi)thiophene) (TS6T1, TS6T2) and poly(9,9-di-n-octyldibenzosilole-alt-(bi)thiophene) (BS8T1, BS8T2), and examine in detail the consequences of introducing dithienosilole and dibenzosilole cores into a thiophene polymer backbone. We demonstrate air-stable thin-film transistors (TFTs) fabricated under ambient conditions having hole mobilities as large as 0.08 cm(2)/V x s, low turn-on voltages, and current on/off ratios > 10(6). Additionally, unencapsulated TFTs fabricated under ambient conditions are air-stable, an important advance over regioregular poly(3-hexylthiophene) (P3HT)-based devices. Density functional theory calculations provide detailed insight into the polymer physicochemical and charge transport characteristics. A direct correlation between the hole injection barrier and both TFT turn-on voltage and TFT polymer hole mobility is identified and discussed, in combination with thin-film morphological characteristics, to explain the observed OTFT performance trends.

  10. Semiconductor ferroelectric compositions and their use in photovoltaic devices

    DOEpatents

    Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E; Grinberg, Ilya; West, Don Vincent

    2016-11-01

    Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

  11. Light emitting ceramic device and method for fabricating the same

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2004-11-30

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  12. Structural and transport properties of metallic and semiconducting Sb{sub 2}Te{sub 3} alloy

    SciTech Connect

    Das, Diptasikha; Malik, K.; Bandyopadhyay, S.; Banerjee, S.; Banerjee, Aritra; Dhara, S.

    2015-06-24

    Metallic and semiconducting Sb{sub 2}Te{sub 3} alloys have been synthesized by controlling the cooling rate in the solid state reaction method. Temperature dependent resistivity is measured down to 10 K for the identification of metallic and semiconducting phases. Structural studies are performed by both X-ray diffraction (XRD) and Raman spectroscopic analyses. XRD study confirms single phase nature of polycrystalline alloys in the detectable limit. Raman spectroscopy is used to understand the vibration properties of Sb{sub 2}Te{sub 3} crystals. Widening of full width at half maxima of the highest intense peak in the XRD analysis indicates higher amount of defects in the semiconducting phase than that in the metallic one. Raman study indicates presence of impurity phases in the semiconducting Sb{sub 2}Te{sub 3}. The resistivity of semiconducting Sb{sub 2}Te{sub 3} sample is higher than that of metallic one, which corroborates with the XRD and Raman analyses.

  13. Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer

    NASA Astrophysics Data System (ADS)

    Shan, P. C.; ćelik-Butler, Z.; Butler, D. P.; Jahanzeb, A.; Travers, C. M.; Kula, W.; Sobolewski, Roman

    1996-12-01

    We explore the application of the semiconducting phases of YBaCuO thin films as a bolometer for uncooled infrared detection. For this study, four different structures were built with different types of buffer layers: YBaCuO on a Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. These films were all amorphous without a detectable long range order. For comparison, crystalline tetragonal YBa2Cu3O6.5 and YBa2Cu3O6.3 thin films on a LaAlO3 substrate were included into the study. All six films exhibited semiconducting resistance versus temperature characteristics. The bolometer figures of merit, responsivity, and detectivity were calculated from the measured temperature coefficient of resistance (TCR) and the inherent noise characteristics of the temperature sensing element. The room temperature TCRs for all four amorphous films were greater than 2.5% K-1. The highest TCR of 4.02% K-1 was observed on the amorphous YBaCuO thin film deposited on MgO/Si without a SiO2 layer. The TCR of the tetragonal films, on the other hand, remained 2% K-1 or less in the same temperature range. Noise measurements performed in the 1-100 Hz frequency range revealed a quadratic dependence on the bias current as would be expected from ohmic electrical characteristics. The Johnson and 1/f regions were clearly identified in the noise spectrum. From TCR and noise measurements, we estimated the amorphous semiconducting YBaCuO bolometers would have a responsivity as high as 3.8×105 V/W and a detectivity as high as 1.6×109 cm Hz1/2/W for 1 μA bias current and frame frequency of 30 Hz if integrated with a typical air-gap thermal isolation structure.

  14. Zonal Flow Magnetic Field Interaction in the Semi-Conducting Region of Giant Planets

    NASA Astrophysics Data System (ADS)

    Cao, Hao; Stevenson, David J.

    2016-10-01

    All four giant planets in the Solar System feature zonal flows on the order of 100 m/s in the cloud deck, and large-scale intrinsic magnetic fields on the order of 1 Gauss near the surface. The vertical structure of the zonal flows remains obscure. The end-member scenarios are shallow flows confined in the radiative atmosphere and deep flows throughout the planet with constant velocity along the direction of the spin-axis. The electrical conductivity increases smoothly as a function of depth inside Jupiter and Saturn, while a discontinuity of electrical conductivity inside Uranus and Neptune cannot be ruled out. Deep zonal flows will inevitably interact with the magnetic field, at depth with even modest electrical conductivity. Here we investigate the interaction between zonal flows and magnetic fields in the semi-conducting region of giant planets. Employing mean-field electrodynamics, we show that the interaction will generate detectable poloidal magnetic field perturbations spatially correlated with the deep zonal flows. Assuming the peak amplitude of the dynamo α-effect to be 0.1 mm/s, deep zonal flows on the order of 0.1 - 1 m/s in the semi-conducting region of Jupiter and Saturn would generate poloidal magnetic perturbations on the order of 0.01 % - 1 % of the background dipole field. These poloidal perturbations should be detectable with the in-situ magnetic field measurements from the upcoming Juno mission and the Cassini Grand Finale. This implies that magnetic field measurements can be employed to constrain the properties of deep zonal flows in the semi-conducting region of giant planets.

  15. Two spatially separated phases in semiconducting Rb0.8Fe1.5S2

    DOE PAGES

    Wang, Meng; Tian, Wei; Valdivia, P.; ...

    2014-09-26

    We report neutron scattering and transport measurements on semiconducting Rb0.8Fe1.5S2, a compound isostructural and isoelectronic to the well-studied A0.8FeySe2(A = K, Rb, Cs, Tl/K) superconducting systems. Both resistivity and DC susceptibility measurements reveal a magnetic phase transition at T = 275 K. Neutron diffraction studies show that the 275 K transition originates from a phase with rhombic iron vacancy order which exhibits an in-plane stripe antiferromagnetic ordering below 275 K. In addition, the stripe antiferromagnetic phase interdigitates mesoscopically with an ubiquitous phase with √5 x√5 iron vacancy order. This phase has a magnetic transition at TN = 425 K andmore » an iron vacancy order-disorder transition at TS = 600 K. These two different structural phases are closely similar to those observed in the isomorphous Se materials. Based on the close similarities of the in-plane antiferromagnetic structures, moments sizes, and ordering temperatures in semiconducting Rb0.8Fe1.5S2 and K0.81Fe1.58Se2, we argue that the in-plane antiferromagnetic order arises from strong coupling between local moments. Superconductivity, previously observed in the A0.8FeySe2₋ zSz system, is absent in A0.8Fe1.5S2, which has a semiconducting ground state. We discuss the implied relationship between stripe and block antiferromagnetism and superconductivity in these materials as well as a strategy for further investigation.« less

  16. Nonlinear Terahertz Absorption of Graphene Plasmons.

    PubMed

    Jadidi, Mohammad M; König-Otto, Jacob C; Winnerl, Stephan; Sushkov, Andrei B; Drew, H Dennis; Murphy, Thomas E; Mittendorff, Martin

    2016-04-13

    Subwavelength graphene structures support localized plasmonic resonances in the terahertz and mid-infrared spectral regimes. The strong field confinement at the resonant frequency is predicted to significantly enhance the light-graphene interaction, which could enable nonlinear optics at low intensity in atomically thin, subwavelength devices. To date, the nonlinear response of graphene plasmons and their energy loss dynamics have not been experimentally studied. We measure and theoretically model the terahertz nonlinear response and energy relaxation dynamics of plasmons in graphene nanoribbons. We employ a terahertz pump-terahertz probe technique at the plasmon frequency and observe a strong saturation of plasmon absorption followed by a 10 ps relaxation time. The observed nonlinearity is enhanced by 2 orders of magnitude compared to unpatterned graphene with no plasmon resonance. We further present a thermal model for the nonlinear plasmonic absorption that supports the experimental results. The model shows that the observed strong linearity is caused by an unexpected red shift of plasmon resonance together with a broadening and weakening of the resonance caused by the transient increase in electron temperature. The model further predicts that even greater resonant enhancement of the nonlinear response can be expected in high-mobility graphene, suggesting that nonlinear graphene plasmonic devices could be promising candidates for nonlinear optical processing.

  17. Wide-gap semiconducting graphene from nitrogen-seeded SiC.

    PubMed

    Wang, F; Liu, G; Rothwell, S; Nevius, M; Tejeda, A; Taleb-Ibrahimi, A; Feldman, L C; Cohen, P I; Conrad, E H

    2013-10-09

    All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

  18. Influence of cysteine doping on photoluminescence intensity from semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Karachevtsev, V. A.

    2015-03-01

    Photoluminescence (PL) from semiconducting single-walled carbon nanotubes can be applied for detection of cysteine. It is shown that cysteine doping (from 10-8 to 10-3 M) into aqueous suspension of nanotubes with adsorbed DNA leads to increase of PL intensity. The PL intensity was enhanced by 27% at 10-3 M cysteine concentration in suspension. Most likely, the PL intensity increases due to the passivation of p-defects on the nanotube by the cysteine containing reactive thiol group. The effect of doping with other amino acids without this group (methionine, serine, aspartic acid, lysine, proline) on the PL intensity is essentially weaker.

  19. Photoelectron detection from transient species in organic semiconducting thin films by dual laser pulse irradiation

    NASA Astrophysics Data System (ADS)

    Hosokai, Takuya; Matsuzaki, Hiroyuki; Furube, Akihiro; Nakamura, Ken

    2017-02-01

    An Nd3+:YAG pulsed laser was employed as a light source for two-photon photoemission from organic semiconducting thin films in low vacuum and air. Photoionization by the two-photon process was confirmed in both the environments by measuring photoemission current. By constructing a pump-probe system, photoemissions from transient species formed by the pump light irradiation were detected by probe light irradiation as a result of a linear increase in the photocurrent with the pump power via a one-photon process. Thus, we propose a novel method called two-photon photoelectron yield spectroscopy to determine the excited-state energy levels in ambient environments.

  20. Experimental study of lattice dynamics in individual semiconducting double-walled carbon nanotubes: Tangential G modes

    NASA Astrophysics Data System (ADS)

    Levshov, D. I.; Tran, H. N.; Slabodyan, Yu. S.; Osadchii, A. V.; Roshal', S. B.; Yuzyuk, Yu. I.

    2017-02-01

    The tangential G modes in individual semiconducting double-walled nanotubes have been examined via Raman spectroscopy over a wide laser excitation wavelength range. Individual suspended nanotubes have been synthesized via chemical vapor deposition. The ( n, m) chirality indices are determined via electron diffraction and high-resolution transmission electron microscopy. The pronounced shift in the tangential modes compared to the analogous modes of single-walled nanotubes has been observed in Raman spectra of double-walled nanotubes. The shift value is shown to depend on the interlayer distance and on the van der Waals interaction between the layers in a double-walled tube.

  1. Temperature-dependent thermoelectric power of semiconducting bismuth-vanadate glass

    NASA Astrophysics Data System (ADS)

    Ghosh, Aswini

    1989-01-01

    The temperature dependence of the thermoelectric power of the semiconducting bismuth-vanadate glasses was presented in a range of compositions. The high-temperature thermoelectric power was satisfactorily explained by Heikes' relation [R. R. Heikes and R. W. Ure, Eds., Thermoelectricity (Interscience, New York, 1961), p. 81]. The thermoelectric power data also showed evidence of small polaron formation in the glass and revealed that the disorder energy happened to increase with the increase of V2O5 content in the glass. An estimate of the disorder energy was made from the low-temperature thermoelectric power data.

  2. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    SciTech Connect

    Jungwirth, T.; Novak, V.; Cukr, M.; Zemek, J.; Marti, X.; Horodyska, P.; Nemec, P.; Holy, V.; Maca, F.; Shick, A. B.; Masek, J.; Kuzel, P.; Nemec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.

    2011-01-15

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  3. The effect of induced charges on low-energy particle trajectories near conducting and semiconducting plates

    NASA Technical Reports Server (NTRS)

    Coffey, Victoria N.; Moore, Thomas E.

    1992-01-01

    The effect of the induced charge was found on particles less than 1 eV as they passed through simulated parallel, grounded channels that are comparable in dimension to those that are presently in space plasma instruments which measure the flux of low-energy ions. Applications were made to both conducting and semiconducting channels that ranged in length from 0.1 to 50 mm and in aspect ratio from 1 to 100. The effect of the induced charge on particle trajectories from simple straight lines. Several configurations of channel aspect ratio and detector locations are considered. The effect is important only at very low energies with small dimensions.

  4. Bioengineered Silicon Diatoms: Adding Photonic Features to a Nanostructured Semiconductive Material for Biomolecular Sensing

    NASA Astrophysics Data System (ADS)

    Rea, Ilaria; Terracciano, Monica; Chandrasekaran, Soundarrajan; Voelcker, Nicolas H.; Dardano, Principia; Martucci, Nicola M.; Lamberti, Annalisa; De Stefano, Luca

    2016-09-01

    Native diatoms made of amorphous silica are first converted into silicon structures via magnesiothermic process, preserving the original shape: electron force microscopy analysis performed on silicon-converted diatoms demonstrates their semiconductor behavior. Wet surface chemical treatments are then performed in order to enhance the photoluminescence emission from the resulting silicon diatoms and, at the same time, to allow the immobilization of biological probes, namely proteins and antibodies, via silanization. We demonstrate that light emission from semiconductive silicon diatoms can be used for antibody-antigen recognition, endorsing this material as optoelectronic transducer.

  5. Transient Torque Technique for Viscosity and Electrical Conductivity Determination of Semiconducting Liquids

    NASA Technical Reports Server (NTRS)

    Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C.-H.; Lehoczky, S. L.; Feth, S.; Zhu, S.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    A novel apparatus based on transient torque technique is constructed in MSFC/NASA. The apparatus uses a 125um diameter quartz fiber as torsion wire. A high sensitive angular detector is implemented to measure the deflection angle of the crucible containing the liquid. A rotating magnetic field (RMF) is used to induce a rotating flow of a conducting or semiconducting melts. By measuring the magnitude and transient behavior of the induced deflection angle, the electrical conductivity and viscosity of the melt can be measured simultaneously. High purity elements namely Hg, Ga, Zn and Te are tested at room temperature and high temperature up to 900 C.

  6. Charge-induced anisotropic distortions of semiconducting and metallic carbon nanotubes.

    PubMed

    Gartstein, Yu N; Zakhidov, A A; Baughman, R H

    2002-07-22

    To accommodate extra electrons or holes injected into a single-wall carbon nanotube, carbon-carbon bonds adjust their lengths. Resulting changes in carbon-nanotube length as a function of charge injection provide the basis for electromechanical actuators. We show that a key mechanism at low injection levels, modulation of electron kinetic energy, provides nanotube deformations that are both anisotropic and strongly dependent on nanotube structure. Nanotubes can exhibit both expansion and contraction, as well as nonmonotonic size changes. The magnitude of the actuation response of semiconducting carbon nanotubes may be substantially larger than that of graphite.

  7. Defect characterization and stress analysis by white beam synchrotron X-ray topography in single crystal semiconducting materials

    NASA Astrophysics Data System (ADS)

    Sarkar, Vishwanath

    Semiconductor devices are becoming increasingly more complex as the number of transistors increases in the same Integrated Circuit (IC) area. Due to the complexity in design; processing and packaging of the device plays a crucial role in the IC fabrication. Package induced residual stress are not only detrimental to device performance but can also lead to device failure. We propose a non-destructive method to determine the complete stress state at each point on a packaged Silicon device. Surface and edge defect created as a result of various manufacturing steps were characterized using different techniques, primarily X-ray diffraction topography, optical microscopy, SEM and TEM. Residual stress plays an important role in the performance and lifetime of single crystal device material. Here we present a novel technique using white beam synchrotron X-ray diffraction reticulography, Stress Mapping and Analysis via Ray Tracing (SMART) in order to determine residual stress level at an array of points over the entire crystal area. This method has a unique advantage compared with other stress measurement technique in that it can evaluate all six components of the stress tensor. The underlying experimental technique is based on white beam synchrotron X-ray diffraction topography and ray tracing. An array of X-ray micro-beam is illuminated on the single crystal sample and multiple reflections (reticulographs) are recorded simultaneously on a photographic film. Crystallographic plane normal vector at the location of each micro-beam in the crystal is calculated. The variation of the plane normal vector direction is due to residual strain (both sheer and dilatational) present in the crystal. By considering three different diffracting planes and corresponding reticulograph a complete state of stress is calculated. Principle, applications and limitations are discussed. White beam synchrotron reticulography is used in reflection geometry to evaluate complete residual stress tensor

  8. Developing resonant tunneling devices based on graphene

    NASA Astrophysics Data System (ADS)

    Yu, Eric; Tiwari, Sandip; Stewart, Derek

    2009-03-01

    We present an ab-initio study of the electronic properties of patterned graphene structures as candidate resonant tunneling devices. We consider graphene nanoribbons that have been modified with one or more narrow constrictions or patterned with periodic nanoscale antidotes[1]. Specifically, we focus on semi-metallic armchair nanoribbons with narrow semiconducting regions and semi-metallic zigzag nanoribbons patterned with antidots. Using a first-principles density functional theory (DFT) approach, we investigate the induced band-gap opening and transmission coefficients. We examine how varying the lengths of the constrictions, changing the separation between dots and their sizes affect transport properties. We will also discuss I-V characteristics of these graphene structures and evaluate the possibility of a negative differential resistance in these devices. [1] T. G. Pedersen et al., Physical Review Letters, 100 136804 (2008)

  9. Selective nuclear localization of siRNA by metallic versus semiconducting single wall carbon nanotubes in keratinocytes

    PubMed Central

    Huzil, John Torin; Saliaj, Evi; Ivanova, Marina V; Gharagozloo, Marjan; Loureiro, Maria Jimena; Lamprecht, Constanze; Korinek, Andreas; Chen, Ding Wen; Foldvari, Marianna

    2015-01-01

    Background: The potential use of carbon nanotubes (CNTs) in gene therapy as delivery systems for nucleic acids has been recently recognized. Here, we describe that metallic versus semiconducting single-wall CNTs can produce significant differences in transfection rate and cellular distribution of siRNA in murine PAM212 keratinocytes. Results/Methodology: The results of cell interaction studies, coupled with supportive computational simulations and ultrastructural studies revealed that the use of metallic single wall CNTs resulted in siRNA delivery into both the cytoplasm and nucleus of keratinocytes, whereas semiconducting CNTs resulted in delivery only to the cytoplasm. Conclusion: Using enriched fractions of metallic or semiconducting CNTs for siRNA complex preparation may provide specific subcellular targeting advantages. PMID:28031892

  10. Controlled assembly and electronics in semiconductor nanocrystal-based devices

    NASA Astrophysics Data System (ADS)

    Drndic, Marija

    2006-03-01

    I will discuss the assembly of semiconductor nanocrystals (CdSe and PbSe) into electronic devices and the basic mechanisms of charge transport in nanocrystal arrays [1-4]. Spherical CdSe nanocrystals show robust memory effects that can be exploited for memory applications [1]. Nanocrystal memory can be erased electrically or optically and is rewritable. In PbSe nanocrystal arrays, as the interdot coupling is increased, the system evolves from an insulating regime dominated by Coulomb blockade to a semiconducting regime, where hopping conduction is the dominant transport mechanism [2]. Two-dimensional CdSe nanorod arrays show striking and anomalous transport properties, including strong and reproducible non-linearities and current oscillations with dc-voltage [4]. I will also discuss imaging of the charge transport in nanocrystal-based electronic devices. Nanocrystal arrays were investigated using electrostatic force microscopy (EFM) and transmission electron microscopy (TEM) [3]. Changes in lattice and transport properties upon annealing in vacuum were revealed. Local charge transport was directly imaged by EFM and correlated to nanopatterns observed with TEM. This work shows how charge transport in complex nanocrystal networks can be identified with nm resolution [3]. This work was supported by the ONR grant N000140410489, the NSF grants DMR-0449553 and MRSEC DMR00-79909, and the ACS PRF grant 41256-G10. References:1) Fischbein M. D. and Drndic M., ``CdSe nanocrystal quantum-dot memory,'' Applied Physics Letters, 86 (19), 193106, 2005.2) H. E. Romero and Drndic M., ``Coulomb blockade and hopping conduction in PbSe quantum dots,'' Physical Review Letters 95, 156801, 2005.3) Hu Z., Fischbein M. D. and Drndic M., ``Local charge transport in two-dimensional PbSe nanocrystal arrays studied by electrostatic force microscopy",'' Nano Letters 5 (7), 1463, 2005.4) Romero H.E., Calusine G. and Drndic M., ``Current oscillations, switching and hysteresis in CdSe nanorod

  11. Nonlinear multiferroic phase shifters for microwave frequencies

    SciTech Connect

    Ustinov, Alexey B.; Kalinikos, Boris A.; Srinivasan, G.

    2014-02-03

    A nonlinear microwave phase shifter based on a planar multiferroic composite has been studied. The multiferroic structure is fabricated in the form of a bilayer consisting of yttrium iron garnet and barium strontium titanate. The principle of operation of the device is based on the linear and nonlinear control of the phase shift of the hybrid spin-electromagnetic waves propagating in the bilayer. The linear control is realized with magnetic and electric fields. The nonlinear control is provided by the input power of microwave signal. The device showed a nonlinear phase shift up to 250°, electric field induced phase shift up to 330°, and magnetic field induced phase shift of more than 180°.

  12. Piezoelectric monolayers as nonlinear energy harvesters.

    PubMed

    López-Suárez, Miquel; Pruneda, Miguel; Abadal, Gabriel; Rurali, Riccardo

    2014-05-02

    We study the dynamics of h-BN monolayers by first performing ab-initio calculations of the deformation potential energy and then solving numerically a Langevine-type equation to explore their use in nonlinear vibration energy harvesting devices. An applied compressive strain is used to drive the system into a nonlinear bistable regime, where quasi-harmonic vibrations are combined with low-frequency swings between the minima of a double-well potential. Due to its intrinsic piezoelectric response, the nonlinear mechanical harvester naturally provides an electrical power that is readily available or can be stored by simply contacting the monolayer at its ends. Engineering the induced nonlinearity, a 20 nm2 device is predicted to harvest an electrical power of up to 0.18 pW for a noisy vibration of 5 pN.

  13. Temperature dependent reversible p-n-p type conduction switching with colossal change in thermopower of semiconducting AgCuS.

    PubMed

    Guin, Satya N; Pan, Jaysree; Bhowmik, Arghya; Sanyal, Dirtha; Waghmare, Umesh V; Biswas, Kanishka

    2014-09-10

    Semiconductors have been fundamental to various devices that are typically operated with electric field, such as transistors, memories, sensors, and resistive switches. There is growing interest in the development of novel inorganic materials for use in transistors and semiconductor switches, which can be operated with a temperature gradient. Here, we show that a crystalline semiconducting noble metal sulfide, AgCuS, exhibits a sharp temperature dependent reversible p-n-p type conduction switching, along with a colossal change in the thermopower (ΔS of ~1757 μV K(-1)) at the superionic phase transition (T of ~364 K). In addition, its thermal conductivity is ultralow in 300-550 K range giving AgCuS the ability to maintain temperature gradients. We have developed fundamental understanding of the phase transition and p-n-p type conduction switching in AgCuS through temperature dependent synchrotron powder X-ray diffraction, heat capacity, Raman spectroscopy, and positron annihilation spectroscopy measurements. Using first-principles calculations, we show that this rare combination of properties originates from an effective decoupling of electrical conduction and phonon transport associated with electronic states of the rigid sulfur sublattice and soft vibrations of the disordered cation sublattices, respectively. Temperature dependent p-n-p type conduction switching makes AgCuS an ideal material for diode or transistor devices that operate reversibly on temperature or voltage changes near room temperature.

  14. Size-dependent property and cell labeling of semiconducting polymer dots.

    PubMed

    Sun, Kai; Chen, Haobin; Wang, Lei; Yin, Shengyan; Wang, Haiyu; Xu, Gaixia; Chen, Danni; Zhang, Xuanjun; Wu, Changfeng; Qin, Weiping

    2014-07-09

    Semiconducting polymer dots (Pdots) represent a new class of fluorescent nanoparticles for biological applications. In this study, we investigated their size-dependent fluorescence and cellular labeling properties. We demonstrate that the polymer conformation in solution phase largely affects the polymer folding and packing during the nanoparticle preparation process, resulting in solution-phase control over the fluorescence properties of semiconducting polymer nanoparticles. The resulting Pdots exhibit apparent size dependent absorption and emission, a characteristic feature of different chain packing behaviors due to the preparation conditions. Single-particle fluorescence imaging was employed to perform a side-by-side comparison on the Pdot brightness, indicating a quadratic dependence of single-particle brightness on particle size. Upon introducing a positively charged dye Nile blue, all the three type of Pdots were quenched very efficiently (Ksv > 1 × 10(7) M(-1)) in an applied quenching process at low dye concentrations, but exhibit apparent difference in quenching efficiency with increasing dye concentration. Furthermore, Pdots of different sizes were used for cell uptake and cellular labeling involving biotin-streptavidin interactions. Fluorescence imaging together with flow cytometry studies clearly showed size dependent labeling brightness. Small-sized Pdots appear to be more effective for immunolabeling of cell surface, whereas medium-sized Pdots exhibit the highest uptake efficiency. This study provides a concrete guidance for selecting appropriate particle size for biological imaging and sensing applications.

  15. Superconducting and semiconducting YBaCuO thin film bolometer investigations for future THz imaging arrays

    NASA Astrophysics Data System (ADS)

    Jagtap, Vishal S.; Dégardin, Annick F.; Longhin, Mattia; Aurino, Mario; Kreisler, Alain J.

    2008-10-01

    There is a strong need for wideband and sensitive THz receivers for radio astronomy and remote sensing applications, for which superconducting Hot Electron Bolometer (HEB) mixers are very competitive. Besides, new THz applications have arisen because of interesting interaction with various media, for which room temperature detectors are highly attractive. We have used YBa2Cu3O7-d (YBCO) oxides to fabricate bolometers, either of high-Tc superconducting HEB type (high oxygen content, δ < 0.3) or semiconducting type (low oxygen content, δ > 0.5). Firstly, we fabricated HEBs made from superconducting YBCO ultrathin films (15 to 40 nm thick) etched to form submicrometer constrictions. In order to investigate the feasibility of highly sensitive HEB linear arrays for passive THz imaging applications, extensive technological runs were performed to prevent ageing effects on both the pixel electrical and optical characteristics. Secondly, we designed YBCO semiconducting bolometric pixels for room temperature operation. Due to the reduced sensitivity and bandwidth with respect to superconducting HEBs, we considered the feasibility of 2D arrays for active THz imaging. As a first experimental step, pixel responsivity and thermal crosstalk between pixels were studied in the 1 Hz to 100 kHz modulation frequency range, so to evaluate the adequate frame refreshing rate.

  16. Synthesis, characterization, and transistor and solar cell applications of a naphthobisthiadiazole-based semiconducting polymer.

    PubMed

    Osaka, Itaru; Shimawaki, Masafumi; Mori, Hiroki; Doi, Iori; Miyazaki, Eigo; Koganezawa, Tomoyuki; Takimiya, Kazuo

    2012-02-22

    We report the synthesis and characterization of a novel donor-acceptor semiconducting polymer bearing naphthobisthiadiazole (NTz), a doubly benzothiadiazole (BTz)-fused ring, and its applications to organic field-effect transistors and bulk heterojunction solar cells. With NTz's highly π-extended structure and strong electron affinity, the NTz-based polymer (PNTz4T) affords a smaller bandgap and a deeper HOMO level than the BTz-based polymer (PBTz4T). PNTz4T exhibits not only high field-effect mobilities of ~0.56 cm(2)/(V s) but also high photovoltaic properties with power conversion efficiencies of ~6.3%, both of which are significantly high compared to those for PBTz4T. This is most likely due to the more suitable electronic properties and, importantly, the more highly ordered structure of PNTz4T in the thin film than that of PBTz4T, which might originate in the different symmetry between the cores. NTz, with centrosymmetry, can lead to a more linear backbone in the present polymer system than BTz with axisymmetry, which might be favorable for better molecular ordering. These results demonstrate great promise for using NTz as a bulding unit for high-performance semiconducting polymers for both transistors and solar cells.

  17. Active Control of Protein and Ionic Transport through Semiconducting Conical Nanopores

    NASA Astrophysics Data System (ADS)

    James, Teena; Kalinin, Yevgeniy; Chan, Chih-Chieh; Randhawa, Jatinder; Gaevski, Mikhail; Gracias, David

    2013-03-01

    Nanopores with conical geometries have been found to rectify ionic current in electrolytes. While nanopores in semiconducting membranes offer the ability to modulate ionic transport, the fabrication of conical nanopores in silicon has proven challenging. Here, we report the discovery that Au nanoparticle-assisted plasma etching results in the formation of conical etch profiles in Si. We show that this process provides a versatile means to fabricate nanopores on Si substrates with variable pore-diameters and cone-angles. When in contact with aqueous electrolyte solution (pH>3), the nanopore was found to exhibit negative surface charge due to de-protonation of the Si-OH surface groups. The rectification ratio of ionic current through the pore was thus found to be variable by altering the pH, owing to the amphoteric nature of Si-OH surface groups (pKa 6.9) and was also dependent on the ionic strengths, agreeing with the theoretical predictions based on Poisson -Nernst -Planck equation. We demonstrate that these semiconducting conical nanopores can function as ionic switches with high on-off ratios, by varying Si surface charge through voltage gating. Further, we demonstrate voltage gated control over protein translocation through these pores.

  18. Half-cell potentials of semiconductive simple binary sulphides in aqueous solution

    USGS Publications Warehouse

    Sato, M.

    1966-01-01

    Theoretical consideration of the charge-transfer mechanism operative in cells with an electrode of a semiconductive binary compound leads to the conclusion that the half-cell potential of such a compound is not only a function of ionic activities in the electrolytic solution, but also a function of the activities of the component elements in the compound phase. The most general form of the electrode equation derived for such a compound with a formula MiXj which dissociates into Mj+ and Xi- ions in aqueous solution is. EMiXj = EMiXj0 + R T 2 ij ln [ (sua Mj+)aqi ?? (suaX)jMiXj/ (suaXi-)aqj ?? (suaM)iMiXj],. where. EMiXj0 = 1 2(EM,Mj+0 + EXi-,X). The equation can be modified to other forms. When applied to semiconductive simple binary sulphides, these equations appear to give better descriptions of the observed electrode potentials of such sulphides than any other proposed equations. ?? 1966.

  19. A Semi-Conductive Copper-Organic Framework with Two Types of Photocatalytic Activity.

    PubMed

    Wu, Zhi-Lei; Wang, Chang-Hong; Zhao, Bin; Dong, Jie; Lu, Feng; Wang, Wei-Hua; Wang, Wei-Chao; Wu, Guang-Jun; Cui, Jian-Zhong; Cheng, Peng

    2016-04-11

    Based on the newly designed ligand 4'-(3,5-dicarboxyphenyl)-4,2':6',4''-terpyridine (DCTP), a unique semi-conductive 3D framework {[Cu(Ι)Cu(ΙΙ)2(DCTP)2]NO3⋅1.5 DMF}n (1) with a narrow band gap of 2.1 eV, was obtained and structurally characterized. DFT calculations with van de Waals correction employed to explore the electronic structure of 1, clearly revealed its semi-conductive behavior. Furthermore, we found that 1 exhibits a superior band alignment with water to produce hydrogen and degrade organic pollutants. Without adding any photosensitizers, 1 displays an efficiently photocatalytic hydrogen production in water based on the photo-generated electrons under UV/Vis light. 1 also exhibits excellent photo-degradation of methyl blue under visible-light owing to the strong oxidization of excited holes. It is the first example of MOFs with doubly photocatalytic activities related to photo-generated electrons and holes, respectively.

  20. Giant room-temperature spin caloritronics in spin-semiconducting graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Chen, Xiaobin; Liu, Yizhou; Gu, Bing-Lin; Duan, Wenhui; Liu, Feng

    2014-09-01

    Spin caloritronics refers to generating spin current by thermal gradient. Here we report a theoretical study demonstrating giant spin caloritronic effects in a new class of materials, called spin semiconductors, which are characterized with a "spin gap," the energy gap between spin-up and -down channels. Generally, spin Seebeck coefficient (Ss) is shown to increase linearly with the spin gap. Specifically, unprecedented large Ss˜3.4 mV/K and spin figure of merit ZsT˜119 were found in spin-semiconducting graphene nanoribbons (GNRs) with sawtooth (ST) zigzag edges, based on first-principles calculations. Such giant spin caloritronic effects are shown to originate from a large spin gap of ST GNRs, in addition to two other spin-independent features of large band gap and narrow bandwidth which are commonly known for good thermoelectric materials. Our studies suggest that spin-semiconducting nanostructures, such as ST GNRs, are promising candidates for room-temperature spin caloritronics with high efficiency.

  1. Electronic band structure, doping, and defects in the semiconducting Half Heusler compound CoTiSb

    NASA Astrophysics Data System (ADS)

    Kawasaki, Jason; Johansson, Linda; Hjort, Martin; Timm, Rainer; Schultz, Brian; Balasubramanian, Thiagarajan; Mikkelsen, Anders; Palmstrom, Chris

    2013-03-01

    We report transport and electronic band structure measurements on epitaxial films of the Half Heusler compound CoTiSb. CoTiSb belongs to the family of Half Heuslers with 18 valence electrons per formula unit that are predicted to be semiconducting despite being composed of all metallic components. Here the CoTiSb films were grown by molecular beam epitaxy on a lattice matched InAlAs buffer. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Scanning tunnelling spectroscopy and temperature-dependent transport measurements reveal that the films are semiconducting, with unintentionally doped carrier concentrations comparable to that of highly doped conventional compound semiconductors. These carrier concentrations can be modulated by doping with Sn. The band structure of the films was measured by angle resolved photoemission spectroscopy at the MAX-Lab Synchrotron facility. The bulk bands are in general agreement with density functional theory calculations, with a valence band maximum at Γ and surface states within the bulk band gap. The effects of defects are explored in order to explain the ARPES results. This work was supported by the ARO, AFOSR, ONR, and NSF.

  2. Mechanical and electronic properties at the interface between the Si(100) surface and semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Barraza-Lopez, Salvador

    2007-03-01

    I discuss the ab initio mechanical and electronic properties of semiconducting carbon nanotubes adsorbed on the Si(100) surface. After revising results from nanotubes on the fully unpassivated surface[1], the interaction between a semiconducting nanotube and a fully H-passivated Si(100) surface with dopants is examined[2]. As silicon wafers are ordinarily doped, the model closely resembles experimental onditions[2,3,4], allowing for qualitative comparison. The single H-monolayer prevents electronic states in nanotubes from energetically shifting along with those of the doped supporting substrate, permitting the engineering of the relative positions of the slab and nanotube band edges. Finally, and following experimental work, we study adsorption characteristics of nanotubes on partially passivated surfaces. Surface states in the unpassivated regions modify the electronic structure of the interface and provide for the anchoring of nanotubes, deforming them in some cases. Results with and without dopants will be given[2].1 S. Barraza-Lopez et al. J. Appl. Phys. (in press). 2 Submitted. 3 Appl. Phys. Lett 83, 5029 (2003). 4 P. M. Albrecht and J. W. Lyding, Small (in press).

  3. Effect of fractal silver electrodes on charge collection and light distribution in semiconducting organic polymer films

    SciTech Connect

    Chamousis, RL; Chang, LL; Watterson, WJ; Montgomery, RD; Taylor, RP; Moule, AJ; Shaheen, SE; Ilan, B; van de Lagemaat, J; Osterloh, FE

    2014-08-21

    Living organisms use fractal structures to optimize material and energy transport across regions of differing size scales. Here we test the effect of fractal silver electrodes on light distribution and charge collection in organic semiconducting polymer films made of P3HT and PCBM. The semiconducting polymers were deposited onto electrochemically grown fractal silver structures (5000 nm x 500 nm; fractal dimension of 1.71) with PEDOT:PSS as hole-selective interlayer. The fractal silver electrodes appear black due to increased horizontal light scattering, which is shown to improve light absorption in the polymer. According to surface photovoltage spectroscopy, fractal silver electrodes outperform the flat electrodes when the BHJ film thickness is large (>400 nm, 0.4 V photovoltage). Photocurrents of up to 200 microamperes cm(-2) are generated from the bulk heterojunction (BHJ) photoelectrodes under 435 nm LED (10-20 mW cm(-2)) illumination in acetonitrile solution containing 0.005 M ferrocenium hexafluorophosphate as the electron acceptor. The low IPCE values (0.3-0.7%) are due to slow electron transfer to ferrocenium ion and due to shunting along the large metal-polymer interface. Overall, this work provides an initial assessment of the potential of fractal electrodes for organic photovoltaic cells.

  4. Direct measurement of the absolute absorption spectrum of individual semiconducting single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Blancon, Jean-Christophe; Paillet, Matthieu; Tran, Huy Nam; Than, Xuan Tinh; Guebrou, Samuel Aberra; Ayari, Anthony; Miguel, Alfonso San; Phan, Ngoc-Minh; Zahab, Ahmed-Azmi; Sauvajol, Jean-Louis; Fatti, Natalia Del; Vallée, Fabrice

    2013-09-01

    The optical properties of single-wall carbon nanotubes are very promising for developing novel opto-electronic components and sensors with applications in many fields. Despite numerous studies performed using photoluminescence or Raman and Rayleigh scattering, knowledge of their optical response is still partial. Here we determine using spatial modulation spectroscopy, over a broad optical spectral range, the spectrum and amplitude of the absorption cross-section of individual semiconducting single-wall carbon nanotubes. These quantitative measurements permit determination of the oscillator strength of the different excitonic resonances and their dependencies on the excitonic transition and type of semiconducting nanotube. A non-resonant background is also identified and its cross-section comparable to the ideal graphene optical absorbance. Furthermore, investigation of the same single-wall nanotube either free standing or lying on a substrate shows large broadening of the excitonic resonances with increase of oscillator strength, as well as stark weakening of polarization-dependent antenna effects, due to nanotube-substrate interaction.

  5. Respiratory interactions of soil bacteria with (semi)conductive iron-oxide minerals.

    PubMed

    Kato, Souichiro; Nakamura, Ryuhei; Kai, Fumiyoshi; Watanabe, Kazuya; Hashimoto, Kazuhito

    2010-12-01

    Pure-culture studies have shown that dissimilatory metal-reducing bacteria are able to utilize iron-oxide nanoparticles as electron conduits for reducing distant terminal acceptors; however, the ecological relevance of such energy metabolism is poorly understood. Here, soil microbial communities were grown in electrochemical cells with acetate as the electron donor and electrodes (poised at 0.2 V versus Ag/AgCl) as the electron acceptors in the presence and absence of iron-oxide nanoparticles, and respiratory current generation and community structures were analysed. Irrespective of the iron-oxide species (hematite, magnetite or ferrihydrite), the supplementation with iron-oxide minerals resulted in large increases (over 30-fold) in current, while only a moderate increase (∼10-fold) was observed in the presence of soluble ferric/ferrous irons. During the current generation, insulative ferrihydrite was transformed into semiconductive goethite. Clone-library analyses of 16S rRNA gene fragments PCR-amplified from the soil microbial communities revealed that iron-oxide supplementation facilitated the occurrence of Geobacter species affiliated with subsurface clades 1 and 2. We suggest that subsurface-clade Geobacter species preferentially thrive in soil by utilizing (semi)conductive iron oxides for their respiration.

  6. Nonlinear modeling of an aerospace object dynamics

    NASA Astrophysics Data System (ADS)

    Davydov, I. E.; Davydov, E. I.

    2017-01-01

    Here are presented the scientific results, obtained by motion modeling of complicated technical systems of aerospace equipment with consideration of nonlinearities. Computerized panel that allows to measure mutual influence of the system's motion and stabilization device with consideration of its real characteristics has been developed. Analysis of motion stability of a system in general has been carried out and time relationships of the system's motion taking in account nonlinearities are presented.

  7. Mixed organotin(IV) chalcogenides: from molecules to Sn-S-Se semiconducting thin films deposited by spin-coating.

    PubMed

    Bouška, Marek; Střižík, Lukáš; Dostál, Libor; Růžička, Aleš; Lyčka, Antonín; Beneš, Ludvík; Vlček, Milan; Přikryl, Jan; Knotek, Petr; Wágner, Tomáš; Jambor, Roman

    2013-02-04

    Put the right spin on it: Mixed monomeric organotin(IV) chalcogenides of the general formula L(2)Sn(2)EX(2) containing two terminal Sn-X (X = Se, Te) bonds were prepared and were tested as potential single-source precursors for the deposition of semiconducting thin films. Spin-coating deposition of [{2,6-(Me(2)NCH(2))(2)C(6)H(3)}SnSe](2)(μ-S), as the useful single-source precursor, provided amorphous Sn-S-Se semiconducting thin films.

  8. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.

    PubMed

    Li, Shisheng; Liu, Chang; Hou, Peng-Xiang; Sun, Dong-Ming; Cheng, Hui-Ming

    2012-11-27

    Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).

  9. High Efficiency Photovoltaic Devices Fabricated from Self-Assemble Block Insulating-Conducting Copolymer Containing Semiconducting Nanoparticles

    DTIC Science & Technology

    2005-12-14

    effectively increase quenching of the photoluminescence. The 3nm x 30nm TiO2 nanorods were synthesized by modified sol - gel method under low temperature...a synthetic route for preparing a novel hybrid materials of poly(3-hexylthiophene)/D-A linker/ TiO2 . The chemical structure of the D-A linker which...polymerizable thiophene ring. After the formation of self-assembled monolayers (SAMs) of linker on TiO2 surface, the terminal thiophene ring in the linker

  10. New Nonlinear Multigrid Analysis

    NASA Technical Reports Server (NTRS)

    Xie, Dexuan

    1996-01-01

    The nonlinear multigrid is an efficient algorithm for solving the system of nonlinear equations arising from the numerical discretization of nonlinear elliptic boundary problems. In this paper, we present a new nonlinear multigrid analysis as an extension of the linear multigrid theory presented by Bramble. In particular, we prove the convergence of the nonlinear V-cycle method for a class of mildly nonlinear second order elliptic boundary value problems which do not have full elliptic regularity.

  11. Materials growth and characterization of thermoelectric and resistive switching devices

    NASA Astrophysics Data System (ADS)

    Norris, Kate J.

    In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

  12. Mechanical mixing in nonlinear nanomechanical resonators

    NASA Astrophysics Data System (ADS)

    Erbe, A.; Krömmer, H.; Kraus, A.; Blick, R. H.; Corso, G.; Richter, K.

    2000-11-01

    The physics of nonlinear dynamics has been studied in detail in macroscopic mechanical systems like the driven classical pendulum. By now, it is possible to build mechanical devices on the nanometer scale with eigenfrequencies on the order of several 100 MHz. In this work, we want to present how to machine such nanomechanical resonators out of silicon-on-insulator wafers and how to operate them in the nonlinear regime in order to investigate higher-order mechanical mixing at radio frequencies. The nonlinear response then is compared in detail to nth-order perturbation theory and nonperturbative numerical calculations.

  13. Spectral Hole Burning via Kerr Nonlinearity

    NASA Astrophysics Data System (ADS)

    Khan, Anwar Ali; Abdul Jabar, M. S.; Jalaluddin, M.; Bacha, Bakht Amin; Iftikhar, Ahmad

    2015-10-01

    Spectral hole burning is investigated in an optical medium in the presence of Doppler broadening and Kerr nonlinearity. The Kerr nonlinearity generates coherent hole burning in the absorption spectrum. The higher order Kerr nonlinearity enhances the typical lamb dip of the hole. Normal dispersion in the hole burning region while Steep anomalous dispersion between the two hole burning regions also enhances with higher order Kerr effect. A large phase shift creates large delay or advancement in the pulse propagation while no distortion is observed in the pulse. These results provide significant steps to improve optical memory, telecom devices, preservation of information and image quality. Supported by Higher Education Commission (HEC) of Pakistan

  14. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng

    2013-05-01

    In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ~34 cm2 V-1 s-1 and on-off ratios of ~107 have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm2 V-1 s-1 and on-off ratios of up to 105. Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a Vdd of -5 V. This work paves the way for making printable logic circuits for real applications.In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ~34 cm2 V-1 s-1 and on-off ratios of ~107 have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm2 V-1 s-1 and on-off ratios of up to 105

  15. Photovoltaic device

    DOEpatents

    Reese, Jason A; Keenihan, James R; Gaston, Ryan S; Kauffmann, Keith L; Langmaid, Joseph A; Lopez, Leonardo; Maak, Kevin D; Mills, Michael E; Ramesh, Narayan; Teli, Samar R

    2017-03-21

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  16. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-06-02

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device with a multilayered photovoltaic cell assembly and a body portion joined at an interface region and including an intermediate layer, at least one interconnecting structural member, relieving feature, unique component geometry, or any combination thereof.

  17. Photovoltaic device

    DOEpatents

    Reese, Jason A.; Keenihan, James R.; Gaston, Ryan S.; Kauffmann, Keith L.; Langmaid, Joseph A.; Lopez, Leonardo C.; Maak, Kevin D.; Mills, Michael E.; Ramesh, Narayan; Teli, Samar R.

    2015-09-01

    The present invention is premised upon an improved photovoltaic device ("PV device"), more particularly to an improved photovoltaic device (10) with a multilayered photovoltaic cell assembly (100) and a body portion (200) joined at an interface region (410) and including an intermediate layer (500), at least one interconnecting structural member (1500), relieving feature (2500), unique component geometry, or any combination thereof.

  18. Single-handed helical wrapping of single-walled carbon nanotubes by chiral, ionic, semiconducting polymers.

    PubMed

    Deria, Pravas; Von Bargen, Christopher D; Olivier, Jean-Hubert; Kumbhar, Amar S; Saven, Jeffery G; Therien, Michael J

    2013-10-30

    We establish the requisite design for aryleneethynylene polymers that give rise to single-handed helical wrapping of single-walled carbon nanotubes (SWNTs). Highly charged semiconducting polymers that utilize either an (R)- or (S)-1,1'-bi-2-naphthol component in their respective conjugated backbones manifest HRTEM and AFM images of single-chain-wrapped SWNTs that reveal significant preferences for the anticipated helical wrapping handedness; statistical analysis of these images, however, indicates that ∼20% of the helical structures are formed with the "unexpected" handedness. CD spectroscopic data, coupled with TDDFT-based computational studies that correlate the spectral signatures of semiconducting polymer-wrapped SWNT assemblies with the structural properties of the chiral 1,1'-binaphthyl unit, suggest strongly that two distinct binaphthalene SWNT binding modes, cisoid-facial and cisoid-side, are possible for these polymers, with the latter mode responsible for inversion of helical chirality and the population of polymer-SWNT superstructures that feature the unexpected polymer helical wrapping chirality at the nanotube surface. Analogous aryleneethynylene polymers were synthesized that feature a 2,2'-(1,3-benzyloxy)-bridged (b)-1,1'-bi-2-naphthol unit: this 1,1'-bi-2-naphthol derivative is characterized by a bridging 2,2'-1,3 benzyloxy tether that restricts the torsional angle between the two naphthalene subunits along its C1-C1' chirality axis to larger, oblique angles that facilitate more extensive van der Waals contact of the naphthyl subunits with the nanotube. Similar microscopic, spectroscopic, and computational studies determine that chiral polymers based on conformationally restricted transoid binaphthyl units direct preferential facial binding of the polymer with the SWNT and thereby guarantee helically wrapped polymer-nanotube superstructures of fixed helical chirality. Molecular dynamics simulations provide an integrated picture tying together the

  19. Nonlinear modelling of polymer electrolyte membrane fuel cell stack using nonlinear cancellation technique

    SciTech Connect

    Barus, R. P. P.; Tjokronegoro, H. A.; Leksono, E.; Ismunandar

    2014-09-25

    Fuel cells are promising new energy conversion devices that are friendly to the environment. A set of control systems are required in order to operate a fuel cell based power plant system optimally. For the purpose of control system design, an accurate fuel cell stack model in describing the dynamics of the real system is needed. Currently, linear model are widely used for fuel cell stack control purposes, but it has limitations in narrow operation range. While nonlinear models lead to nonlinear control implemnetation whos more complex and hard computing. In this research, nonlinear cancellation technique will be used to transform a nonlinear model into a linear form while maintaining the nonlinear characteristics. The transformation is done by replacing the input of the original model by a certain virtual input that has nonlinear relationship with the original input. Then the equality of the two models is tested by running a series of simulation. Input variation of H2, O2 and H2O as well as disturbance input I (current load) are studied by simulation. The error of comparison between the proposed model and the original nonlinear model are less than 1 %. Thus we can conclude that nonlinear cancellation technique can be used to represent fuel cell nonlinear model in a simple linear form while maintaining the nonlinear characteristics and therefore retain the wide operation range.

  20. Development of Inorganic Precursors for Manufacturing of Photovoltaic Devices: Cooperative Research and Development Final Report, CRADA Number CRD-08-308

    SciTech Connect

    van Hest, M.; Ginley, D.

    2013-06-01

    Both NREL and Rohm and Haas Electronic Materials are interested in the development of solution phase metal and semiconductive precursors for the manufacturing of photovoltaic devices. In particular, we intend to develop material sets for atmospheric deposition processes. The cooperation between these two parties will enable high value materials and processing solutions for the manufacturing of low cost, roll-to-roll photovoltaics.

  1. Electronic Structure of Semiconducting and Metallic Tubes in TiO2/Carbon Nanotube Heterojunctions: Density Functional Theory Calculations.

    PubMed

    Long, Run

    2013-04-18

    The electronic structure of the TiO2(110) surface interfaced with both a semiconducting and metallic carbon nanotube (CNT) was investigated by density functional theory. Our simulations rationalized visible light photocatalytic activity of CNT/TiO2 hybrid materials higher than that under ultraviolent irradiation and showed that the photoactivity of a semiconducting CNT decorating TiO2 is better than that of the metallic CNT/TiO2 system due to efficient charge separation across the interface. This suggests that semiconducting CNT/TiO2 could be a potential photovoltaic material. In contrast, strong interaction between a metallic CNT and TiO2 leads to large charge transfer. Such charge transfer reduces the built-in potential, in turn resulting in inefficient charge separation. Functionalizing the metallic CNT with a small platinum cluster can increase the built-in potential and drive charge separation. These observations indicate that the CNT/TiO2 interface can be a potential photovoltaic material by a metal cluster decorating a CNT despite a real tube being composed of the mixture of metallic and semiconducting CNTs.

  2. Vectorial mapping of noncollinear antiferromagnetic structure of semiconducting FeSe surface with spin-polarized scanning tunneling microscopy

    SciTech Connect

    Zhang, K. F.; Yang, Fang; Song, Y. R.; Zhang, Xiaole; Chen, Xianfeng; Liu, Canhua; Qian, Dong; Gao, C. L. Jia, Jin-Feng; Luo, Weidong

    2016-02-08

    Antiferromagnetic semiconductors gain increasing interest due to their possible application in spintronics. Using spin polarized scanning tunneling microscopy operating in a vector field, we mapped the noncollinear antiferromagnetic spin structure of a semiconducting hexagonal FeSe surface on the atomic scale. The surface possesses an in-plane compensated Néel structure which is further confirmed by first-principles calculations.

  3. Filtering by nonlinear systems.

    PubMed

    Campos Cantón, E; González Salas, J S; Urías, J

    2008-12-01

    Synchronization of nonlinear systems forced by external signals is formalized as the response of a nonlinear filter. Sufficient conditions for a nonlinear system to behave as a filter are given. Some examples of generalized chaos synchronization are shown to actually be special cases of nonlinear filtering.

  4. Integration of Semiconducting Sulfides for Full-Spectrum Solar Energy Absorption and Efficient Charge Separation.

    PubMed

    Zhuang, Tao-Tao; Liu, Yan; Li, Yi; Zhao, Yuan; Wu, Liang; Jiang, Jun; Yu, Shu-Hong

    2016-05-23

    The full harvest of solar energy by semiconductors requires a material that simultaneously absorbs across the whole solar spectrum and collects photogenerated electrons and holes separately. The stepwise integration of three semiconducting sulfides, namely ZnS, CdS, and Cu2-x S, into a single nanocrystal, led to a unique ternary multi-node sheath ZnS-CdS-Cu2-x S heteronanorod for full-spectrum solar energy absorption. Localized surface plasmon resonance (LSPR) in the nonstoichiometric copper sulfide nanostructures enables effective NIR absorption. More significantly, the construction of pn heterojunctions between Cu2-x S and CdS leads to staggered gaps, as confirmed by first-principles simulations. This band alignment causes effective electron-hole separation in the ternary system and hence enables efficient solar energy conversion.

  5. Genetically improved monolayer-forming tobacco mosaic viruses to generate nanostructured semiconducting bio/inorganic hybrids.

    PubMed

    Atanasova, Petia; Stitz, Nina; Sanctis, Shawn; Maurer, Johannes H M; Hoffmann, Rudolf C; Eiben, Sabine; Jeske, Holger; Schneider, Jörg J; Bill, Joachim

    2015-04-07

    The genetically determined design of structured functional bio/inorganic materials was investigated by applying a convective assembly approach. Wildtype tobacco mosaic virus (wt TMV) as well as several TMV mutants were organized on substrates over macroscopic-length scales. Depending on the virus type, the self-organization behavior showed pronounced differences in the surface arrangement under the same convective assembly conditions. Additionally, under varying assembly parameters, the virus particles generated structures encompassing morphologies emerging from single micrometer long fibers aligned parallel to the triple-contact line through disordered but dense films to smooth and uniform monolayers. Monolayers with diverse packing densities were used as templates to form TMV/ZnO hybrid materials. The semiconducting properties can be directly designed and tuned by the variation of the template architecture which are reflected in the transistor performance.

  6. Narrow-gap semiconducting properties of KMgBi with multiband feature

    NASA Astrophysics Data System (ADS)

    Zhang, Xiao; Sun, Shanshan; Lei, Hechang

    2017-01-01

    KMgBi single crystals have been grown successfully by using the Bi flux method. KMgBi shows a semiconducting behavior with a metal-semiconductor transition in high temperature regions. Moreover, both electron- and hole-type carriers exist in KMgBi with a strong temperature dependence of carrier concentrations and mobilities. These results suggest that KMgBi is a narrow-band semiconductor with multiband features in the bulk rather than a semimetal as predicted theoretically. On the other hand, KMgBi exhibits a resistivity plateau in low temperature regions, similar to other topological insulators. It implies that there might be a nontrivial topological surface state in KMgBi.

  7. Evaluation Methods of Contamination Flashover Voltage Performance of Cylindrical Type Semi-conducting Glaze Porcelain Insulators

    NASA Astrophysics Data System (ADS)

    Yamada, Kazuma; Hayashi, Akio; Saka, Chiharu; Sakanishi, Kenji; Matsuoka, Ryosuke; Ito, Susumu; Fujii, Osamu

    Higher contamination flashover voltage of a semi-conducting glaze (SG) insulator owes primarily to the drying effect by leakage current flowing in the glaze. Significant reduction in contamination flashover voltage was confirmed on a cylindrical SG insulator when fog density was increased from 0.5g/m3 to 13g/m3 in clean fog test. The effect of de-energized duration between trip-out and re-energization on the contamination flashover voltage of a cylindrical SG insulator under cold-wet switch-on conditions was investigated. As the de-energized duration becomes shorter, the flashover voltage of a cylindrical SG insulator becomes higher. Higher contamination design voltages may be adopted even under cold-wet switch-on conditions.

  8. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications.

    PubMed

    Islam, Ahmad E; Rogers, John A; Alam, Muhammad A

    2015-12-22

    High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.

  9. La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

    PubMed

    Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

    2014-01-01

    Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

  10. Phase Separation in Bulk Heterojunctions of Semiconducting Polymers and Fullerenes for Photovoltaics

    NASA Astrophysics Data System (ADS)

    Treat, Neil D.; Chabinyc, Michael L.

    2014-04-01

    Thin-film solar cells are an important source of renewable energy. The most efficient thin-film solar cells made with organic materials are blends of semiconducting polymers and fullerenes called the bulk heterojunction (BHJ). Efficient BHJs have a nanoscale phase-separated morphology that is formed during solution casting. This article reviews recent work to understand the nature of the phase-separation process resulting in the formation of the domains in polymer-fullerene BHJs. The BHJ is now viewed as a mixture of polymer-rich, fullerene-rich, and mixed polymer-fullerene domains. The formation of this structure can be understood through fundamental knowledge of polymer physics. The implications of this structure for charge transport and charge generation are given.

  11. Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature

    NASA Astrophysics Data System (ADS)

    Kwon, Sera; Park, Hyun-Woo; Chung, Kwun-Bum

    2017-02-01

    The semiconducting properties of Au ion-irradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature. The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 × 1011 to 5 × 1012 ions/cm2. The physical properties showed no change regardless of the Au ion irradiation dose; however, the electrical properties of Au ion-irradiated ZnO thin films changed, depending on the Au ion irradiation dose. The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band. These remarkable changes in electronic structure correlate with changes in electrical properties, such as carrier concentration and mobility.

  12. Itinerant magnetism in doped semiconducting β-FeSi₂ and CrSi₂.

    PubMed

    Singh, David J; Parker, David

    2013-12-17

    Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi₂ and CrSi₂ at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds.

  13. In situ synthesis of semiconducting single-walled carbon nanotubes by modified arc discharging method

    NASA Astrophysics Data System (ADS)

    Zhao, Tingkai; Ji, Xianglin; Jin, Wenbo; Yang, Wenbo; Zhao, Xing; Dang, Alei; Li, Hao; Li, Tiehu

    2017-02-01

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) were in situ synthesized by a temperature-controlled arc discharging furnace with DC electric field using Co-Ni alloy powder as catalyst in helium gas. The microstructures of s-SWCNTs were characterized using high-resolution transmission electron microscopy, electron diffraction, and Raman spectrometry apparatus. The experimental results indicated that the best voltage value in DC electric field is 54 V, and the environmental temperature of the reaction chamber is 600 °C. The mean diameter of s-SWCNTs was estimated about 1.3 nm. The chiral vector ( n, m) of s-SWCNTs was calculated to be (10, 10) type according to the electron diffraction patterns.

  14. Ultralong single organic semiconducting nano/microwires based on spiro-substituted perylenetetracarboxylic diimide.

    PubMed

    Lambrecht, Julia; Saragi, Tobat P I; Onken, Kristian; Salbeck, Josef

    2011-06-01

    An ultralong single organic semiconducting nano/microwire (NMW) is difficult to obtain. Here we show that this NMW can easily be prepared by using drying under solvent atmosphere method. This technique is not only unique, but also very compatible with our active material, spiro-substituted perylenetetracarboxylic diimide. A single NMW with a length of up to ∼5.5 mm and an aspect ratio of ∼9200 can be obtained. Finally, we succeeded to measure the electrical resistivity of a single NMW with values between 1 × 10(2) and 1 × 10(4) Ω m and the growth direction can be controlled as well by using a prestructured substrate.

  15. Investigation of compositional segregation during unidirectional solidification of solid solution semiconducting alloys

    NASA Technical Reports Server (NTRS)

    Wang, J. C.

    1982-01-01

    Compositional segregation of solid solution semiconducting alloys in the radial direction during unidirectional solidification was investigated by calculating the effect of a curved solid liquid interface on solute concentration at the interface on the solid. The formulation is similar to that given by Coriell, Boisvert, Rehm, and Sekerka except that a more realistic cylindrical coordinate system which is moving with the interface is used. Analytical results were obtained for very small and very large values of beta with beta = VR/D, where V is the velocity of solidification, R the radius of the specimen, and D the diffusivity of solute in the liquid. For both very small and very large beta, the solute concentration at the interface in the solid C(si) approaches C(o) (original solute concentration) i.e., the deviation is minimal. The maximum deviation of C(si) from C(o) occurs for some intermediate value of beta.

  16. Semiconducting-to-Metallic Photoconductivity Crossover and Temperature-Dependent Drude Weight in Graphene

    NASA Astrophysics Data System (ADS)

    Frenzel, A. J.; Lui, C. H.; Shin, Y. C.; Kong, J.; Gedik, N.

    2014-08-01

    We investigate the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrate that graphene exhibits semiconducting positive photoconductivity near zero carrier density, which crosses over to metallic negative photoconductivity at high carrier density. These observations can be accounted for by the interplay between photoinduced changes of both the Drude weight and carrier scattering rate. Our findings provide a complete picture to explain the opposite photoconductivity behavior reported in (undoped) graphene grown epitaxially and (doped) graphene grown by chemical vapor deposition. Notably, we observe nonmonotonic fluence dependence of the photoconductivity at low carrier density. This behavior reveals the nonmonotonic temperature dependence of the Drude weight in graphene, a unique property of two-dimensional massless Dirac fermions.

  17. Semiconducting-to-metallic photoconductivity crossover and temperature-dependent Drude weight in graphene.

    PubMed

    Frenzel, A J; Lui, C H; Shin, Y C; Kong, J; Gedik, N

    2014-08-01

    We investigate the transient photoconductivity of graphene at various gate-tuned carrier densities by optical-pump terahertz-probe spectroscopy. We demonstrate that graphene exhibits semiconducting positive photoconductivity near zero carrier density, which crosses over to metallic negative photoconductivity at high carrier density. These observations can be accounted for by the interplay between photoinduced changes of both the Drude weight and carrier scattering rate. Our findings provide a complete picture to explain the opposite photoconductivity behavior reported in (undoped) graphene grown epitaxially and (doped) graphene grown by chemical vapor deposition. Notably, we observe nonmonotonic fluence dependence of the photoconductivity at low carrier density. This behavior reveals the nonmonotonic temperature dependence of the Drude weight in graphene, a unique property of two-dimensional massless Dirac fermions.

  18. Laser method for forming low-resistance ohmic contacts on semiconducting oxides

    DOEpatents

    Narayan, Jagdish

    1981-01-01

    This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

  19. Method for forming low-resistance ohmic contacts on semiconducting oxides

    DOEpatents

    Narayan, J.

    1979-10-01

    The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

  20. Surface-Mediated Solidification of a Semiconducting Polymer during Time-Controlled Spin-Coating.

    PubMed

    Na, Jin Yeong; Kang, Boseok; Lee, Seung Goo; Cho, Kilwon; Park, Yeong Don

    2017-03-22

    Spin-casting a polymer semiconductor solution over a short period of only a few seconds dramatically improved the molecular ordering and charge transport properties of the resulting semiconductor thin films. In this process, it was quite important to halt spinning before the drying line propagation had begun. Here, we elucidated the effects of the substrate surface characteristics on the drying kinetics during spin-coating, systematically investigated the microstructural evolution during semiconducting polymer solidification, and evaluated the performances of the resulting polymer field-effect transistors. We demonstrated that the spin time required to enhance the molecular ordering and electrical properties of the polythiophene thin films was strongly correlated with the solidification onset time, which was altered by surface treatments introduced onto the substrate surfaces.

  1. Transparent ferrimagnetic semiconducting CuCr2O4 thin films by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Tripathi, T. S.; Yadav, C. S.; Karppinen, M.

    2016-04-01

    We report the magnetic and optical properties of CuCr2O4 thin films fabricated by atomic layer deposition (ALD) from Cu(thd)2, Cr(acac)3, and ozone; we deposit 200 nm thick films and anneal them at 700 °C in oxygen atmosphere to crystallize the spinel phase. A ferrimagnetic transition at 140 K and a direct bandgap of 1.36 eV are determined for the films from magnetic and UV-vis spectrophotometric measurements. Electrical transport measurements confirm the p-type semiconducting behavior of the films. As the ALD technique allows the deposition of conformal pin-hole-free coatings on complex 3D surfaces, our CuCr2O4 films are interesting material candidates for various frontier applications.

  2. Atomic-scale studies of nanometer-sized graphene on semiconducting surfaces.

    NASA Astrophysics Data System (ADS)

    Koepke, Justin; Ritter, Kyle; He, Kevin; Lyding, Joseph

    2008-03-01

    We have performed atomic level studies of graphene on semiconducting surfaces using ultrahigh vacuum scanning tunneling microscopy (UHV-STM) [1]. By mechanically exfoliating graphite and using an in-situ dry contact transfer technique [2], we observe predominantly single and double layers of atomically clean graphene with lateral dimensions of 2-20 nm. Room temperature scanning tunneling spectroscopy measurements of the 2-10 nm monolayer pieces display a size-dependent energy gap ranging from 0.1-1 eV, while monolayers with lateral dimensions of 20 nm exhibit a finite density of states at the Fermi level. [1] K.A. Ritter and J.W. Lyding, Nanotechnology, in press (http://arxiv.org/pdf/0711.0050). [2] P.M. Albrecht and J.W. Lyding, APL 83, 5029 (2003).

  3. Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle

    NASA Technical Reports Server (NTRS)

    Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir

    2013-01-01

    The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of the electron density for an individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closest neighbours reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.

  4. Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle

    NASA Technical Reports Server (NTRS)

    Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir

    2013-01-01

    The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of electron density for na individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closet neighbors reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.

  5. Pulsed laser annealing of ion-implanted semiconducting GaAs for homojunction solar cells

    NASA Astrophysics Data System (ADS)

    Lowndes, D. H.; Cleland, J. W.; Fletcher, J.; Narayan, J.; Westbrook, R. D.; Wood, R. F.; Christie, W. H.; Eby, R. E.

    The results of a study whose purpose was to evaluate the combination of ion implantation followed by pulsed ruby laser annealing (II/PLA), as a method for shallow p-n junction formation in semiconducting GaAs substrates, are reported. High dose Zn, Mg, Si and Se implants were used. PLA was carried out in air without encapsulation, and with thin sputtered SiO2 encapsulation layers. The combination of I-V, C-V, SEM, TEM and SIMS measurements that were carried out have important implications for photovoltaic applications including the possibility of forming planar junctions, the choice of implanted ions to obtain high electrical activation, the optimum pulsed laser energy density range, the resultant junction depth and electrical characteristics, and the presence of laser- and implantation-induced residual defects

  6. Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures

    SciTech Connect

    Kim, B. K.; Park, J. S.; Kim, D. H.; Chung, K. B.

    2014-05-05

    Semiconducting properties and electronic structures of amorphous GaZnSnO (GZTO) thin films are investigated with respect to metal cationic composition. An increase of the cationic Sn ratio resulted in an increase of the carrier concentration and a decrease of the mobility of the films. Combinatorial analysis revealed that the electrical characteristics of GZTO films are strongly correlated to changes in electronic structure. The increase in carrier concentration is related to the generation of vacancies by the changes of oxygen coordination around the cationic metal and the shallow band edge state below the conduction band. On the other hand, the decrease of mobility can be explained by the deep band edge state, and the difference between the experimental conduction band and simulated conduction band by the combinatorial electronic structure based on the chemical composition.

  7. Hybridization gap in the semiconducting compound SrIr4In2Ge4

    DOE PAGES

    Calta, Nicholas P.; Im, Jino; Fang, Lei; ...

    2016-11-18

    Here, large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group 1more » $$\\overline{4}$$2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.« less

  8. Spin-Dependent Goos-Hanchen Effect in Semiconducting Quantum Dots

    NASA Astrophysics Data System (ADS)

    Abdelrazek, Ahmed S.; Zein, Walid A.; Phillips, Adel H.

    2013-08-01

    The present research is devoted to the investigation of the spin-dependant Goos-Hanchen phase shift in quantum nanodevice. This nanodevice is modeled as semiconducting quantum dot coupled to two ferromagnetic leads. The spin transport through such nanodevice is conducted under the effect of both magnetic field and the photon energy of the induced ac-field. The angle of incidence of electrons is taken into account. Results show that the Goos-Hanchen phase shift of spin-up electrons is different from that of spin-down electron. Also, spin polarization and giant magneto-resistance are strongly depending on the angle of incidence of electrons and the photon energy of the induced ac-field. The present model could realize experimentally the spin beam splitter and spin filter needed for spin qubits and quantum information processing.

  9. Structural optimization for nonlinear dynamic response.

    PubMed

    Dou, Suguang; Strachan, B Scott; Shaw, Steven W; Jensen, Jakob S

    2015-09-28

    Much is known about the nonlinear resonant response of mechanical systems, but methods for the systematic design of structures that optimize aspects of these responses have received little attention. Progress in this area is particularly important in the area of micro-systems, where nonlinear resonant behaviour is being used for a variety of applications in sensing and signal conditioning. In this work, we describe a computational method that provides a systematic means for manipulating and optimizing features of nonlinear resonant responses of mechanical structures that are described by a single vibrating mode, or by a pair of internally resonant modes. The approach combines techniques from nonlinear dynamics, computational mechanics and optimization, and it allows one to relate the geometric and material properties of structural elements to terms in the normal form for a given resonance condition, thereby providing a means for tailoring its nonlinear response. The method is applied to the fundamental nonlinear resonance of a clamped-clamped beam and to the coupled mode response of a frame structure, and the results show that one can modify essential normal form coefficients by an order of magnitude by relatively simple changes in the shape of these elements. We expect the proposed approach, and its extensions, to be useful for the design of systems used for fundamental studies of nonlinear behaviour as well as for the development of commercial devices that exploit nonlinear behaviour.

  10. Writing simple RF electronic devices on paper with carbon nanotube ink.

    PubMed

    Dragoman, M; Flahaut, E; Dragoman, D; Al Ahmad, M; Plana, R

    2009-09-16

    This paper shows that we can print on paper simple high-frequency electronic devices such as resistances, capacitances or inductances, with values that can be changed in a controllable manner by an applied dc voltage. This tunability is achieved with the help of an ink containing functionalized carbon nanotubes and water. After the water is evaporated from the paper, the nanotubes remain steadily imprinted on paper, showing a semiconducting behavior and tunable electrical properties.

  11. Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    NASA Astrophysics Data System (ADS)

    Suemasu, Takashi; Usami, Noritaka

    2017-01-01

    Semiconducting barium disilicide (BaSi2), which is composed of earth-abundant elements, has attractive features for thin-film solar cell applications. Both a large absorption coefficient comparable to copper indium gallium diselenide and a minority-carrier diffusion length much larger than the grain size of BaSi2 can be used to improve solar cell properties. In this review article, we explore the potential of semiconducting BaSi2 film for thin-film solar cell applications. We start by describing its crystal and energy band structure, followed by discussing thin-film growth techniques and the optical and electrical properties of BaSi2 films. We use a first-principles calculation based on density-functional theory to calculate the position of the Fermi level to predict the carrier type of impurity-doped BaSi2 films using either a group 13 or 15 element, and compare the calculated results with the experimental ones. Special attention was paid to the minority-carrier properties, such as minority-carrier lifetime, minority-carrier diffusion length, and surface passivation. The potential variations across the grain boundaries measured by Kelvin-probe force microscopy allowed us to detect a larger minority-carrier diffusion length in BaSi2 on Si(1 1 1) compared with BaSi2 on Si(0 0 1). Finally, we demonstrate the operation of p-BaSi2/n-Si heterojunction solar cells and discuss prospects for future development.

  12. Spin-orbital coupling effect on the power factor in semiconducting transition-metal dichalcogenide monolayers

    NASA Astrophysics Data System (ADS)

    Guo, San-Dong; Wang, Jian-Li

    2016-09-01

    The electronic structures and thermoelectric properties of semiconducting transition-metal dichalcogenide monolayers {{MX}}2 (M = Zr, Hf, Mo, W and Pt; X = S, Se and Te) are investigated by combining first-principles and Boltzmann transport theory, including spin-orbital coupling (SOC). It is found that the gap decrease increases from S to Te in each cation group when the SOC is opened. The spin-orbital splitting has the same trend with the gap reducing. The calculated results show that SOC has a noteworthy detrimental effect on the p-type power factor, while it has a negligible influence in n-type doping except for the W cation group, which can be understood by considering the effects of SOC on the valence and conduction bands. For {{WX}}2 (X = S, Se and Te), SOC leads to an observable enhanced power factor in n-type doping, which can be explained by SOC-induced band degeneracy, namely the bands converge. Among all of the cation groups, the Pt cation group shows the highest Seebeck coefficient, which leads to the best power factor, if we assume that the scattering time is fixed. The calculated results show that {{MS}}2 (M = Zr, Hf, Mo, W and Pt) have the best p-type power factor of all the cation groups, and that {{MSe}}2 (M = Zr and Hf), {{WS}}2 and {{MTe}}2 (M = Mo and Pt) have a more excellent n-type power factor in their respective cation group. Therefore, these results may be useful for further theoretical prediction or experimental research of excellent thermoelectric materials from semiconducting transition-metal dichalcogenide monolayers.

  13. Semiconducting polymer encapsulated mesoporous silica particles with conjugated Europium complexes: toward enhanced luminescence under aqueous conditions.

    PubMed

    Zhang, Jixi; Prabhakar, Neeraj; Näreoja, Tuomas; Rosenholm, Jessica M

    2014-01-01

    Immobilization of lanthanide organic complexes in meso-organized hybrid materials for luminescence applications have attracted immense interest due to the possibility of controlled segregation at the nanoscopic level for novel optical properties. Aimed at enhancing the luminescence intensity and stability of the hybrid materials in aqueous media, we developed polyvinylpyrrolidone (PVP) stabilized, semiconducting polymer (poly(9-vinylcarbazole), PVK) encapsulated mesoporous silica hybrid particles grafted with Europium(III) complexes. Monosilylated β-diketonate ligands (1-(2-naphthoyl)-3,3,3-trifluoroacetonate, NTA) were first co-condensed in the mesoporous silica particles as pendent groups for bridging and anchoring the lanthanide complexes, resulting in particles with an mean diameter of ∼ 450 nm and a bimodal pore size distribution centered at 3.5 and 5.3 nm. PVK was encapsulated on the resulted particles by a solvent-induced surface precipitation process, in order to seal the mesopores and protect Europium ions from luminescence quenching by producing a hydrophobic environment. The obtained polymer encapsulated MSN-EuLC@PVK-PVP particles exhibit significantly higher intrinsic quantum yield (Φ(Ln) = 39%) and longer lifetime (τ(obs) = 0.51 ms), as compared with those without polymer encapsulation. Most importantly, a high luminescence stability was realized when MSN-EuLC@PVK-PVP particles were dispersed in various aqueous media, showing no noticeable quenching effect. The beneficial features and positive attributes of both mesoporous silica and semiconducting polymers as lanthanide-complex host were merged in a single hybrid carrier, opening up the possibility of using these hybrid luminescent materials under complex aqueous conditions such as biological/physiological environments.

  14. Laser And Nonlinear Optical Materials For Laser Remote Sensing

    NASA Technical Reports Server (NTRS)

    Barnes, Norman P.

    2005-01-01

    NASA remote sensing missions involving laser systems and their economic impact are outlined. Potential remote sensing missions include: green house gasses, tropospheric winds, ozone, water vapor, and ice cap thickness. Systems to perform these measurements use lanthanide series lasers and nonlinear devices including second harmonic generators and parametric oscillators. Demands these missions place on the laser and nonlinear optical materials are discussed from a materials point of view. Methods of designing new laser and nonlinear optical materials to meet these demands are presented.

  15. Photoinduced Nonlinear Mixing of Terahertz Dipole Resonances in Graphene Metadevices.

    PubMed

    In, Chihun; Kim, Hyeon-Don; Min, Bumki; Choi, Hyunyong

    2016-02-17

    The first experimental demonstration of nonlinear terahertz difference-frequency generation in a hybrid graphene metadevice is reported. Decades of research have revealed that terahertz-wave generation is impossible in single-layer graphene. This limitation is overcome and nonlinear terahertz generation by ultra-short optical pulse injection is demonstrated. This device is an essential step toward atomically thin, nonlinear terahertz optoelectronic components.

  16. The effect of system nonlinearities on system noise statistics

    NASA Technical Reports Server (NTRS)

    Robinson, L. H., Jr.

    1971-01-01

    The effects are studied of nonlinearities in a baseline communications system on the system noise amplitude statistics. So that a meaningful identification of system nonlinearities can be made, the baseline system is assumed to transmit a single biphase-modulated signal through a relay satellite to the receiving equipment. The significant nonlinearities thus identified include square-law or product devices (e.g., in the carrier reference recovery loops in the receivers), bandpass limiters, and traveling wave tube amplifiers.

  17. Deflectometry using portable devices

    NASA Astrophysics Data System (ADS)

    Butel, Guillaume P.; Smith, Greg A.; Burge, James H.

    2015-02-01

    Deflectometry is a powerful metrology technique that uses off-the-shelf equipment to achieve nanometer-level accuracy surface measurements. However, there is no portable device to quickly measure eyeglasses, lenses, or mirrors. We present an entirely portable new deflectometry technique that runs on any Android™ smartphone with a front-facing camera. Our technique overcomes some specific issues of portable devices like screen nonlinearity and automatic gain control. We demonstrate our application by measuring an amateur telescope mirror and simulating a measurement of the faulty Hubble Space Telescope primary mirror. Our technique can, in less than 1 min, measure surface errors with accuracy up to 50 nm RMS, simply using a smartphone.

  18. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey L. (Inventor)

    2017-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  19. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey (Inventor)

    2015-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  20. Microfluidic Device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Lin, Jeffrey Chun-Hui (Inventor); Kasdan, Harvey L. (Inventor)

    2016-01-01

    Described herein are particular embodiments relating to a microfluidic device that may be utilized for cell sensing, counting, and/or sorting. Particular aspects relate to a microfabricated device that is capable of differentiating single cell types from dense cell populations. One particular embodiment relates a device and methods of using the same for sensing, counting, and/or sorting leukocytes from whole, undiluted blood samples.

  1. Sealing device

    SciTech Connect

    Garcia-Crespo, Andres Jose

    2013-12-10

    A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

  2. Si-rich Silicon Nitride for Nonlinear Signal Processing Applications.

    PubMed

    Lacava, Cosimo; Stankovic, Stevan; Khokhar, Ali Z; Bucio, T Dominguez; Gardes, F Y; Reed, Graham T; Richardson, David J; Petropoulos, Periklis

    2017-12-01

    Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm(-1)). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

  3. Optoelectronic devices, plasmonics, and photonics with topological insulators

    NASA Astrophysics Data System (ADS)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

    2017-03-01

    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  4. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes.

    PubMed

    Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng

    2013-05-21

    In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ∼34 cm(2) V(-1) s(-1) and on-off ratios of ∼10(7) have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm(2) V(-1) s(-1) and on-off ratios of up to 10(5). Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a V(dd) of -5 V. This work paves the way for making printable logic circuits for real applications.

  5. Blending of n-type Semiconducting Polymer and PC61BM for an Efficient Electron-Selective Material to Boost the Performance of the Planar Perovskite Solar Cell.

    PubMed

    Seo, You-Hyun; Yeo, Jun-Seok; Myoung, NoSoung; Yim, Sang-Youp; Kang, Minji; Kim, Dong-Yu; Na, Seok-In

    2016-05-25

    The highly efficient CH3NH3PbI3 perovskite solar cell (PeSC) is simply achieved by employing a blended electron-transport layer (ETL) consisting of PC61BM and P(NDI2OD-T2). The high molecular weight of P(NDI2OD-T2) allows for a thinned ETL with a uniform morphology that optimizes the PC61BM ETL more effectively. As a result of this enhancement, the power conversion efficiency of a PC61BM:P(NDI2OD-T2)-based PeSC is 25% greater than that of the conventional PC61BM based-PeSC; additionally, the incorporation of P(NDI2OD-T2) into PC61BM attenuates the dependence of the PeSC on the ETL-processing conditions regarding its performance. It is revealed that, in addition to the desirable n-type semiconducting characteristics of PC61BM:P(NDI2OD-T2)-including a higher electron-mobility and a more-effective electron selectivity of a blended ETL for an efficient electron extraction-the superior performance of a PC61BM:P(NDI2OD-T2) device is the result of a thinned and uniformly covered ETL on the perovskite layer.

  6. Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

    NASA Astrophysics Data System (ADS)

    Iefanova, Anastasiia; Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Qiao, Qiquan

    2016-08-01

    Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

  7. Noise in Nonlinear Dynamical Systems

    NASA Astrophysics Data System (ADS)

    Moss, Frank; McClintock, P. V. E.

    2009-08-01

    List of contributors; Preface; Introduction to volume three; 1. The effects of coloured quadratic noise on a turbulent transition in liquid He II J. T. Tough; 2. Electrohydrodynamic instability of nematic liquid crystals: growth process and influence of noise S. Kai; 3. Suppression of electrohydrodynamic instabilities by external noise Helmut R. Brand; 4. Coloured noise in dye laser fluctuations R. Roy, A. W. Yu and S. Zhu; 5. Noisy dynamics in optically bistable systems E. Arimondo, D. Hennequin and P. Glorieux; 6. Use of an electronic model as a guideline in experiments on transient optical bistability W. Lange; 7. Computer experiments in nonlinear stochastic physics Riccardo Mannella; 8. Analogue simulations of stochastic processes by means of minimum component electronic devices Leone Fronzoni; 9. Analogue techniques for the study of problems in stochastic nonlinear dynamics P. V. E. McClintock and Frank Moss; Index.

  8. Real-Time Nonlinear Optical Information Processing.

    DTIC Science & Technology

    1979-06-01

    operations aree presented. One approach realizes the halftone method of nonlinear optical processing in real time by replacing the conventional...photographic recording medium with a real-time image transducer. In the second approach halftoning is eliminated and the real-time device is used directly

  9. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    SciTech Connect

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  10. BRAKE DEVICE

    DOEpatents

    O'Donnell, T.J.

    1959-03-10

    A brake device is described for utilization in connection with a control rod. The device comprises a pair of parallelogram link mechanisms, a control rod moveable rectilinearly therebetween in opposite directions, and shoes resiliently supported by the mechanism for frictional engagement with the control rod.

  11. Josephson Devices

    NASA Astrophysics Data System (ADS)

    Barone, Antonio; Pagano, Sergio

    In this chapter we briefly review the main applications of Josephson effect together with the most successful devices realized. We will give an overview of the various devices, providing also some basic concepts of the underlying physical mechanisms involved, and the associated limit performances. Some considerations on the concrete possibilities of successful "market ready" implementation will also be given.

  12. Electrochromic devices

    DOEpatents

    Allemand, Pierre M.; Grimes, Randall F.; Ingle, Andrew R.; Cronin, John P.; Kennedy, Steve R.; Agrawal, Anoop; Boulton, Jonathan M.

    2001-01-01

    An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

  13. PLASMA DEVICE

    DOEpatents

    Gow, J.D.; Wilcox, J.M.

    1961-12-26

    A device is designed for producing and confining highenergy plasma from which neutrons are generated in copious quantities. A rotating sheath of electrons is established in a radial electric field and axial magnetic field produced within the device. The electron sheath serves as a strong ionizing medium to gas introdueed thereto and also functions as an extremely effective heating mechanism to the resulting plasma. In addition, improved confinement of the plasma is obtained by ring magnetic mirror fields produced at the ends of the device. Such ring mirror fields are defined by the magnetic field lines at the ends of the device diverging radially outward from the axis of the device and thereafter converging at spatial annular surfaces disposed concentrically thereabout. (AFC)

  14. Enrichment of large-diameter semiconducting SWCNTs by polyfluorene extraction for high network density thin film transistors

    NASA Astrophysics Data System (ADS)

    Ding, Jianfu; Li, Zhao; Lefebvre, Jacques; Cheng, Fuyong; Dubey, Girjesh; Zou, Shan; Finnie, Paul; Hrdina, Amy; Scoles, Ludmila; Lopinski, Gregory P.; Kingston, Christopher T.; Simard, Benoit; Malenfant, Patrick R. L.

    2014-01-01

    a narrow chirality and diameter distribution dominated by the (10,9) species with d = 1.29 nm. The enriched sc-SWCNTs allow a simple drop-casting method to form a dense nanotube network on SiO2/Si substrates, leading to thin film transistors (TFTs) with an average mobility of 27 cm2 V-1 s-1 and an average on/off current ratio of 1.8 × 106 when considering all 25 devices having 25 μm channel length prepared on a single chip. The results presented herein demonstrate how an easily scalable technique provides large-diameter sc-SWCNTs with high purity, further enabling the best TFT performance reported to date for conjugated polymer enriched sc-SWCNTs.A systematic study on the use of 9,9-dialkylfluorene homopolymers (PFs) for large-diameter semiconducting (sc-) single-walled carbon nanotube (SWCNT) enrichment is the focus of this report. The enrichment is based on a simple three-step extraction process: (1) dispersion of as-produced SWCNTs in a PF solution; (2) centrifugation at a low speed to separate the enriched sc-tubes; (3) filtration to collect the enriched sc-SWCNTs and remove excess polymer. The effect of the extraction conditions on the purity and yield including molecular weight and alkyl side-chain length of the polymers, SWCNT concentration, and polymer/SWCNT ratio have been examined. It was observed that PFs with alkyl chain lengths of C10, C12, C14, and C18, all have an excellent capability to enrich laser-ablation sc-SWCNTs when their molecular weight is larger than ~10 000 Da. More detailed studies were therefore carried out with the C12 polymer, poly(9,9-di-n-dodecylfluorene), PFDD. It was found that a high polymer/SWCNT ratio leads to an enhanced yield but a reduced sc-purity. A ratio of 0.5-1.0 gives an excellent sc-purity and a yield of 5-10% in a single extraction as assessed by UV-vis-NIR absorption spectra. The yield can also be promoted by multiple extractions while maintaining high sc-purity. Mechanistic experiments involving time

  15. High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

    NASA Astrophysics Data System (ADS)

    Mukaiyama, Koki; Kasai, Shinya; Takahashi, Yukiko K.; Kondou, Kouta; Otani, Yoshichika; Mitani, Seiji; Hono, Kazuhiro

    2017-01-01

    Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 Ω·µm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5 Ω·µm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

  16. Quantitative study of the enhancement of bulk nonlinearities in metamaterials

    SciTech Connect

    Rose, Alec; Larouche, Stephane; Smith, David R.

    2011-11-15

    Artificially structured metamaterials offer a means to enhance the weak optical nonlinearities of natural materials. The enhancement results from the inhomogeneous nature of the metamaterial unit cell, over which the local field distribution can likewise be strongly inhomogeneous, with highly localized and concentrated field regions. We investigate the nonlinear enhancement effect in metamaterials through a numerical study of four nonlinear metamaterial designs comprising arrays of metallic structures embedded in nonlinear dielectrics and operating around 10 THz. Through full-wave simulations and by employing an extended version of the transfer-matrix-based nonlinear parameter retrieval method, we confirm and quantify the enhanced nonlinearities, showing bulk quadratic nonlinear properties that are up to two orders of magnitude larger, and cubic nonlinear properties that are up to four orders of magnitude larger than the bulk nonlinear dielectric alone. Furthermore, the proposed nonlinear metamaterials support a variety of configurable nonlinear properties and regimes, including electric, magnetic, broadband, and low loss, depending on the particular geometry chosen. Finally, we use the retrieved parameters in a coupled-mode theory to predict the optimal crystal lengths and conversion efficiencies of these structures, displaying the possibility of efficient and subwavelength nonlinear devices based on metamaterials.

  17. Nonlinear nanodevices using magnetic flux quanta.

    PubMed

    Ooi, S; Savel'ev, Sergey; Gaifullin, M B; Mochiku, T; Hirata, K; Nori, Franco

    2007-11-16

    All devices realized so far that control the motion of magnetic flux quanta employ either samples with nanofabricated spatially-asymmetric potentials (which strongly limit controllability), or pristine superconductors rectifying with low-efficiency time-asymmetric oscillations of an external magnetic field. Using layered Bi2Sr2CaCu2O8+delta materials, here we fabricate and simulate two efficient nonlinear superconducting devices with no spatial asymmetry. These devices can rectify with high-efficiency a two-harmonic external current dragging vortices in target directions by changing either the relative phase or the frequency ratio of the two harmonics.

  18. Nonlinear modeling of thermoacoustically driven energy cascade

    NASA Astrophysics Data System (ADS)

    Gupta, Prateek; Scalo, Carlo; Lodato, Guido

    2016-11-01

    We present an investigation of nonlinear energy cascade in thermoacoustically driven high-amplitude oscillations, from the initial weakly nonlinear regime to the shock wave dominated limit cycle. We develop a first principle based quasi-1D model for nonlinear wave propagation in a canonical minimal unit thermoacoustic device inspired by the experimental setup of Biwa et al.. Retaining up to quadratic nonlinear terms in the governing equations, we develop model equations for nonlinear wave propagation in the proximity of differentially heated no-slip boundaries. Furthermore, we discard the effects of acoustic streaming in the present study and focus on nonlinear energy cascade due to high amplitude wave propagation. Our model correctly predicts the observed exponential growth of the thermoacoustically amplified second harmonic, as well as the energy transfer rate to higher harmonics causing wave steepening. Moreover, we note that nonlinear coupling of local pressure with heat transfer reduces thermoacoustic amplification gradually thus causing the system to reach limit cycle exhibiting shock waves. Throughout, we verify the results from the quasi-1D model with fully compressible Navier-Stokes simulations.

  19. Device for separating non-ions from ions

    DOEpatents

    Ibrahim, Yehia M.; Smith, Richard D.

    2017-01-31

    A device for separating non-ions from ions is disclosed. The device includes a plurality of electrodes positioned around a center axis of the device and having apertures therein through which the ions are transmitted. An inner diameter of the apertures varies in length. At least a portion of the center axis between the electrodes is non-linear.

  20. Measuring source-pull free nonlinear distortions: a multisine approach

    NASA Astrophysics Data System (ADS)

    Van Moer, Wendy; Pintelon, Rik; Rolain, Yves

    2009-12-01

    This paper presents a method to measure the nonlinear distortions generated by a device-under-test (DUT) out of the frequency band where the device operates. The method compensates for the nonlinear distortions present in the input signal of the DUT and, hence, results in a source-pull free level of the output nonlinear distortions. This is important when determining an accurate adjacent co-channel power ratio (ACPR). The proposed measurement technique is based on a vectorial network analyzer (PNA-X) combined with a broadband multisine excitation of the DUT. Results obtained from a microwave amplifier are reported.

  1. Energy harvesting from the nonlinear oscillations of magnetic levitation

    NASA Astrophysics Data System (ADS)

    Mann, B. P.; Sims, N. D.

    2009-01-01

    This paper investigates the design and analysis of a novel energy harvesting device that uses magnetic levitation to produce an oscillator with a tunable resonance. The governing equations for the mechanical and electrical domains are derived to show the designed system reduces to the form of a Duffing oscillator under both static and dynamic loads. Thus, nonlinear analyses are required to investigate the energy harvesting potential of this prototypical nonlinear system. Theoretical investigations are followed by a series of experimental tests that validate the response predictions. The motivating hypothesis for the current work was that nonlinear phenomenon could be exploited to improve the effectiveness of energy harvesting devices.

  2. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1990-01-01

    Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x

  3. Localized electrical fine tuning of passive microwave and radio frequency devices

    DOEpatents

    Findikoglu, Alp T.

    2001-04-10

    A method and apparatus for the localized electrical fine tuning of passive multiple element microwave or RF devices in which a nonlinear dielectric material is deposited onto predetermined areas of a substrate containing the device. An appropriate electrically conductive material is deposited over predetermined areas of the nonlinear dielectric and the signal line of the device for providing electrical contact with the nonlinear dielectric. Individual, adjustable bias voltages are applied to the electrically conductive material allowing localized electrical fine tuning of the devices. The method of the present invention can be applied to manufactured devices, or can be incorporated into the design of the devices so that it is applied at the time the devices are manufactured. The invention can be configured to provide localized fine tuning for devices including but not limited to coplanar waveguides, slotline devices, stripline devices, and microstrip devices.

  4. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

    PubMed

    Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

    2015-03-24

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

  5. Directing the self-assembly of semiconducting copolymers: the consequences of grafting linear or hyperbranched polyether side chains.

    PubMed

    zur Borg, Lisa; Schüll, Christoph; Frey, Holger; Zentel, Rudolf

    2013-08-01

    The synthesis and self-assembly of novel semiconducting rod-coil type graft block copolymers based on poly(para-phenylene vinylene) (PPV) copolymers is presented, focusing on the ordering effect of linear versus hyperbranched side chains. Using an additional reactive ester block, highly polar, linear poly(ethylene glycol), and hyperbranched polyglycerol side chains are attached in a grafting-to approach. Remarkably, the resulting novel semiconducting graft copolymers with polyether side chains show different solubility and side-chain directed self-assembly behavior in various solvents, e.g., cylindrical or spherical superstructures in the size range of 10 to 120 nm, as shown by TEM. By adjusting the molecular weight and the topology of the polyether segments, self-assembly into defined superstructures can be achieved, which is important for the efficient charge transport in potential electronic applications.

  6. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    PubMed Central

    Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; Hale, William G.; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T.; Omelchenko, Stefan T.; He, Jr-Hau; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g). PMID:25762067

  7. First-principles study of direct and narrow band gap semiconducting β -CuGaO2

    DOE PAGES

    Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; ...

    2015-04-16

    Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO2 phase. Our calculations show that the β-CuGaO2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point of Brillouin zone. Inmore » conclusion, the optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment.« less

  8. Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds

    NASA Astrophysics Data System (ADS)

    Lukashev, P.; Kharel, P.; Gilbert, S.; Staten, B.; Hurley, N.; Fuglsby, R.; Huh, Y.; Valloppilly, S.; Zhang, W.; Yang, K.; Skomski, R.; Sellmyer, D. J.

    2016-04-01

    The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti2MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.

  9. Device Performance

    SciTech Connect

    Not Available

    2006-06-01

    In the Device Performance group, within the National Center for Photovoltaic's Measurements and Characterization Division, we measure the performance of PV cells and modules with respect to standard reporting conditions--defined as a reference temperature (25 C), total irradiance (1000 Wm-2), and spectral irradiance distribution (IEC standard 60904-3). Typically, these are ''global'' reference conditions, but we can measure with respect to any reference set. To determine device performance, we conduct two general categories of measurements: spectral responsivity (SR) and current versus voltage (I-V). We usually perform these measurements using standard procedures, but we develop new procedures when required by new technologies. We also serve as an independent facility for verifying device performance for the entire PV community. We help the PV community solve its special measurement problems, giving advice on solar simulation, instrumentation for I-V measurements, reference cells, measurement procedures, and anomalous results. And we collaborate with researchers to analyze devices and materials.

  10. Device Demonstration

    DTIC Science & Technology

    2006-12-31

    effecting change in the electrical properties of the material. Due to the heating requirement in setting the state, stray radiation does not affect the...device as in traditional binary RAM, thus giving the device radiation-hard properties . Uniformity of the heater elements at a small size below 100 nm is...Molybdenum was chosen for the cathode tube material because it has a low sputtering coefficient, and it’s high temperature properties .. The tubes are

  11. A Novel Effective Approach for Solving Fractional Nonlinear PDEs

    PubMed Central

    Aminikhah, Hossein; Malekzadeh, Nasrin; Rezazadeh, Hadi

    2014-01-01

    The present work introduces an effective modification of homotopy perturbation method for the solution of nonlinear time-fractional biological population model and a system of three nonlinear time-fractional partial differential equations. In this approach, the solution is considered a series expansion that converges to the nonlinear problem. The new approximate analytical procedure depends only on two iteratives. The analytical approximations to the solution are reliable and confirm the ability of the new homotopy perturbation method as an easy device for computing the solution of nonlinear equations. PMID:27419212

  12. A Novel Effective Approach for Solving Fractional Nonlinear PDEs.

    PubMed

    Aminikhah, Hossein; Malekzadeh, Nasrin; Rezazadeh, Hadi

    2014-01-01

    The present work introduces an effective modification of homotopy perturbation method for the solution of nonlinear time-fractional biological population model and a system of three nonlinear time-fractional partial differential equations. In this approach, the solution is considered a series expansion that converges to the nonlinear problem. The new approximate analytical procedure depends only on two iteratives. The analytical approximations to the solution are reliable and confirm the ability of the new homotopy perturbation method as an easy device for computing the solution of nonlinear equations.

  13. Dynamic optical nonlinearities in di-furfuryl ether solution

    NASA Astrophysics Data System (ADS)

    Mendonça, C. R.; Barbosa Neto, N. M.; Batista, P. S.; de Souza, M. F.; Zilio, S. C.

    2002-08-01

    Dynamic nonlinear refraction and absorption of di-furfuryl ether dissolved in dichloro-methane are investigated with a frequency-doubled Q-switched and mode-locked Nd:YAG laser. The nonlinear absorption presents a strong reverse saturation that seems promising for use in optical limiting devices. Three contributions are observed for the nonlinear refraction: one fast process related to the singlet population, and two slow accumulative contributions arising from the triplet population and thermal lensing. The time evolution of the optical nonlinearities, modeled by means of a five-energy-level diagram, allows the determination of excited state cross-sections as well as the intersystem crossing lifetime.

  14. Effect of melt-solid interface shape on lateral compositional distribution of unidirectionally solidified 2-6 semiconducting alloys

    NASA Technical Reports Server (NTRS)

    Wang, Jai-Ching

    1996-01-01

    A computer code developed previously has been used to simulate lateral compositional distributions for several 2-6 semiconducting systems. The code is based on analytical results obtained previously. The system under study is an azimuthal symmetric cylindrical system with a curved melt-solid interface shape during an unidirectional solidification process. It is assumed that the system is under a steady state diffusion limited growth condition.

  15. Semiconducting polymer dots doped with europium complexes showing ultranarrow emission and long luminescence lifetime for time-gated cellular imaging.

    PubMed

    Sun, Wei; Yu, Jiangbo; Deng, Ruiping; Rong, Yu; Fujimoto, Bryant; Wu, Changfeng; Zhang, Hongjie; Chiu, Daniel T

    2013-10-18

    Bright dots: Semiconducting polymer dots (Pdots) doped with europium complexes possess line-like fluorescence emission, high quantum yield, and long fluorescence lifetime. The Pdots successfully labeled receptors on cells. The long fluorescence lifetime of the Pdots was used to distinguish them from other red fluorescence emitting nanoparticles, and improve the signal-to-noise ratio for time-gated cellular imaging. PVK=poly(9-vinylcarbazole).

  16. Toward Low-Voltage and Bendable X-Ray Direct Detectors Based on Organic Semiconducting Single Crystals.

    PubMed

    Ciavatti, Andrea; Capria, Ennio; Fraleoni-Morgera, Alessandro; Tromba, Giuliana; Dreossi, Diego; Sellin, Paul J; Cosseddu, Piero; Bonfiglio, Annalisa; Fraboni, Beatrice

    2015-11-25

    Organic materials have been mainly proposed as ionizing radiation detectors in the indirect conversion approach. The first thin and bendable X-ray direct detectors are realized (directly converting X-photons into an electric signal) based on organic semiconducting single crystals that possess enhanced sensitivity, low operating voltage (≈5 V), and a minimum detectable dose rate of 50 μGy s(-1) .

  17. Direct Formation of Large-Area 2D Nanosheets from Fluorescent Semiconducting Homopolymer with Orthorhombic Crystalline Orientation.

    PubMed

    Yang, Sanghee; Shin, Suyong; Choi, Inho; Lee, Jaeho; Choi, Tae-Lim

    2017-03-01

    Semiconducting polymers have been widely investigated due to their intriguing optoelectronic properties and their high crystallinity that provides a strong driving force for self-assembly. Although there are various reports of successful self-assembly of nanostructures using semiconducting polymers, direct in situ self-assembly of these polymers into two-dimensional (2D) nanostructures has proven difficult, despite their importance for optoelectronics applications. Here, we report the synthesis of a simple conjugated homopolymer by living cyclopolymerization of a 1,6-heptadiyne (having a fluorene moiety) and its efficient in situ formation of large-area 2D fluorescent semiconducting nanostructures. Using high-resolution imaging tools such as atomic force microscopy and transmission electron microscopy, we observed the solvent-dependent self-assembly behaviors of this homopolymer; the identical starting polymer formed 2D nanosheets with different shapes, such as rectangle, raft, and leaf, when dissolved in different solvents. Furthermore, super-resolution optical microscopy enabled the real-time imaging of the fluorescent 2D nanosheets, revealing their stable and uniform shapes, fluorescence, and solution dynamics. Notably, we propose an orthorhombic crystalline packing model to explain the direct formation of 2D nanostructures based on various diffraction patterns, providing important insight for their shape modulation during the self-assembly.

  18. Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

    PubMed Central

    Lin, Jin-Han; Patil, Ranjit A.; Devan, Rupesh S.; Liu, Zhe-An; Wang, Yi-Ping; Ho, Ching-Hwa; Liou, Yung; Ma, Yuan-Ron

    2014-01-01

    We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (EF) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the EF to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters. PMID:25382186

  19. Surfactant free fractions of metallic and semiconducting single-walled carbon nanotubes via optimised gel chromatography

    SciTech Connect

    Lukaszczuk, Pawel; Ruemmeli, Mark H.; Knupfer, Martin; Kalenczuk, Ryszard J.; Borowiak-Palen, Ewa

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer The application of gel permeation chromatography technique in a field of SWCNT separation. Black-Right-Pointing-Pointer Non-commercial agarose gel used as a column filling. Black-Right-Pointing-Pointer Purification route is presented, quality and quantity estimation is shown. Black-Right-Pointing-Pointer Process is ready for high-scale separation of SWCNTs. -- Abstract: We report the procedure of sorting/purification of carbon nanotubes by electronic type using chromatographic column with sodium dodecylsulfate (SDS) and sodium deoxycholate (DOC) solutions as the eluents. The non-commercial agarose gel in different concentrations has been tested in the process. It was found that in optimal gel concentration the fractionation resulted in {approx}96.2% yield of semiconducting species. Importantly, to get surfactant-free fractions the post-separation purification procedure has been carried out. The UV-vis-NIR and Raman spectroscopy have been utilised for the samples analysis. High resolution transmission microscopy and thermogravimetric analysis allowed to study the sample morphology and purity, respectively.

  20. Singlet-Oxygen Generation From Individual Semiconducting and Metallic Nanostructures During Near-Infrared Laser Trapping

    SciTech Connect

    Smith, Bennett E.; Roder, Paden B.; Hanson, Jennifer L.; Manandhar, Sandeep; Devaraj, Arun; Perea, Daniel E.; Kim, Woo-Joong; Kilcoyne, Arthur L.; Pauzauskie, Peter J.

    2015-03-13

    Photodynamic therapy has been used for several decades in the treatment of solid tumors through the generation of reactive singlet-oxygen species (1O2). Recently, nanoscale metallic and semiconducting materials have been reported to act as photosensitizing agents with additional diagnostic and therapeutic functionality. To date there have been no reports of observing the generation of singlet-oxygen at the level of single nanostructures, particularly at near infrared (NIR) wavelengths. Here we demonstrate that NIR laser-tweezers can be used to observe the formation of singlet-oxygen produced from individual silicon and gold nanowires via use of a commercially available reporting dye. The laser trap also induces 2-photon photoexcitation of the dye following a chemical reaction with singlet oxygen. Corresponding 2-photon emission spectra confirms the generation of singlet oxygen from individual silicon nanowires at room temperature (30°C), suggesting a range of applications in understanding the impact of 1O2 on individual cancer cells.

  1. The patterning of sub-500 nm inorganic oxide and semiconducting polymeric structures

    NASA Astrophysics Data System (ADS)

    Hampton, Meredith J.; Williams, Stuart S.; Zhou, Zhilian; Nunes, Janine; Ko, Doo-Hyun; Templeton, Joseph L.; DeSimone, Joseph M.; Samulski, Edward T.

    2008-08-01

    The Pattern Replication In Non-wetting Templates (PRINT) technique has been extended to patterning of isolated features as well as embossed films of sub-500 nm "hard" inorganic oxides and nanocrystalline semiconductors and "soft" semiconducting polymers including TiO2, SnO2, ZnO, ITO, BaTiO3, CdSe, poly(3-hexylthiophene) (P3HT), Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV), and other polythiophene derivatives. The low surface energy, chemically resistant, air permeable elastomeric perflouropolyether (PFPE) based molds allow for numerous materials to be patterned on a variety of substrates including glass, transparent conductive oxides, and thin films of conducting polymer for a wide range of electronic and optical applications. Additionally, PRINT has been employed to pattern features with aspect ratios greater than 1, deposit a second layer of features on top of an initial layer without pattern destruction, and replicate sub-100 nm sized features for photovoltaics applications. Materials and patterns generated in this work were characterized using a variety of techniques including: Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and X-ray Diffraction (XRD).

  2. A very general rate expression for charge hopping in semiconducting polymers

    SciTech Connect

    Fornari, Rocco P.; Aragó, Juan; Troisi, Alessandro

    2015-05-14

    We propose an expression of the hopping rate between localized states in semiconducting disordered polymers that contain the most used rates in the literature as special cases. We stress that these rates cannot be obtained directly from electron transfer rate theories as it is not possible to define diabatic localized states if the localization is caused by disorder, as in most polymers, rather than nuclear polarization effects. After defining the separate classes of accepting and inducing nuclear modes in the system, we obtain a general expression of the hopping rate. We show that, under the appropriate limits, this expression reduces to (i) a single-phonon rate expression or (ii) the Miller-Abrahams rate or (iii) a multi-phonon expression. The description of these limits from a more general expression is useful to interpolate between them, to validate the assumptions of each limiting case, and to define the simplest rate expression that still captures the main features of the charge transport. When the rate expression is fed with a range of realistic parameters the deviation from the Miller-Abrahams rate is large or extremely large, especially for hopping toward lower energy states, due to the energy gap law.

  3. Charge transport in amorphous and tetragonal semiconducting YBaCuO films

    NASA Astrophysics Data System (ADS)

    Çelik-Butler, Z.; Shan, P. C.; Butler, D. P.; Jahanzeb, A.; Travers, C. M.; Kula, W.; Sobolewski, R.

    1997-06-01

    We have explored the charge transport mechanisms in six different YBaCuO semiconducting thin films in the temperature range of 70 K to room temperature. Two of the samples were deposited on LaAlO 3 substrate and were tetragonal with the composition of YBa 2Cu 3O 6.5 and YBa 2Cu 3O 6.3. The other four were amorphous as-deposited on Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. All tested films exhibited semiconductor-type resistance vs. temperature characteristics with increasing resistance as the temperature was decreased. Around room temperature all six samples had thermally activated transport characteristics that was interpreted as activation of hole-like carriers from localized states around the Fermi level to extended states. As the temperature was decreased, two tetragonal samples went through a transition to a variable range hopping-like conduction. The amorphous ones remained within the thermally-activated transport regime in the temperature range of 253 K to 318 K, with EA ≈ 0.2 eV.

  4. The pressure-induced effects in the thermal equilibrium electron properties of semiconducting glasses

    NASA Astrophysics Data System (ADS)

    Klinger, M. I.; Taraskin, S. N.

    1997-05-01

    Strong pressure-induced effects in the thermal equilibrium properties of semiconducting glasses are revealed and theoretically analysed. The basic property under consideration is the concentration of the negative-U centres which determine the mobility-gap spectral structure and the related electron phenomena in the materials. For accessible high pressures, 0953-8984/9/21/009/img5, a rapid increase of the concentration with growing pressure is predicted. This holds for (`weak') negative-U centres formed in typical, `rigid', configurations for the vast majority of atoms, as both the mobility-gap width and the related effective magnitude of the negative pair-correlation energy decrease with pressure. However, at ambient (and low) pressure another type of centre, `strong' negative-U centres formed in glassy atomic soft configurations, predominate, whose concentration decreases with increasing pressure. The resulting concentration of negative-U centres and some related characteristics are shown to exhibit a non-monotonic pressure dependence with a minimum. Future experimental tests of the corresponding theoretical relationships might determine the basic parameters of the phenomenon for the materials under consideration.

  5. Excitonic properties of semiconducting monolayer and bilayer MoT e2

    NASA Astrophysics Data System (ADS)

    Robert, C.; Picard, R.; Lagarde, D.; Wang, G.; Echeverry, J. P.; Cadiz, F.; Renucci, P.; Högele, A.; Amand, T.; Marie, X.; Gerber, I. C.; Urbaszek, B.

    2016-10-01

    MoT e2 belongs to the semiconducting transition-metal dichalcogenide family with certain properties differing from the other well-studied members (Mo ,W ) (S,Se ) 2 . The optical band gap is in the near-infrared region, and both monolayers and bilayers may have a direct optical band gap. We first simulate the single-particle band structure of both monolayer and bilayer MoT e2 with density-functional-theory-G W calculations. We find a direct (indirect) electronic band gap for the monolayer (bilayer). By solving in addition the Bethe-Salpeter equation, we find similar energies for the direct exciton transitions in monolayers and bilayers. We then study the optical properties by means of photoluminescence (PL) excitation, reflectivity, time-resolved PL, and power-dependent PL spectroscopy. With differential reflectivity, we find a similar oscillator strength for the optical transition observed in PL in both monolayers and bilayers suggesting a direct transition in both cases. We identify the same energy for the B -exciton state in the monolayer and the bilayer. Following circularly polarized excitation, we do not find any exciton polarization for a large range of excitation energies. At low temperatures (T =10 K ) , we measure similar PL decay times on the order of 4 ps for both monolayer and bilayer excitons with a slightly longer one for the bilayer. Finally, we observe a reduction of the exciton-exciton annihilation contribution to the nonradiative recombination in bilayers.

  6. Microstructure and optical characterizations of mechanosynthesized nanocrystalline semiconducting ZrTiO4 compound

    NASA Astrophysics Data System (ADS)

    Dutta, Hema; Nandy, Anshuman; Pradhan, S. K.

    2016-08-01

    A ZrO2-TiO2 solid solution is obtained by high energy ball milling of equimolar mixture of monoclinic (m) ZrO2 and anatase (a) TiO2. Nanocrystalline orthorhombic ZrTiO4 compound is initiated from the nucleation of TiO2-ZrO2 solid solution with isostructural s-TiO2 (srilankite) base after 30 min of milling. After 12 h of milling, 95 mol% non-stoichiometric ZrTiO4 phase is formed. Post-annealing of 12 h ball-milled powder mixture at 1073 K for 1 h in open air results in complete formation of stoichiometric ZrTiO4 compound. Microstructures of all powder mixtures milled for different durations have been characterized by Rietveld's structure and microstructure refinement method using X-ray powder diffraction data. HRTEM images of 12 h milled and annealed samples provide direct evidence of the results obtained from the Rietveld analysis. Optical bandgaps of ball milled and annealed ZrTiO4 compounds lie within the semiconducting region (~2.0 eV) and increases with increase in milling time.

  7. Purification of semiconducting single-walled carbon nanotubes by spiral counter-current chromatography.

    PubMed

    Knight, Martha; Lazo-Portugal, Rodrigo; Ahn, Saeyoung Nate; Stefansson, Steingrimur

    2017-02-03

    Over the last decade man-made carbon nanostructures have shown great promise in electronic applications, but they are produced as very heterogeneous mixtures with different properties so the achievement of a significant commercial application has been elusive. The dimensions of single-wall carbon nanotubes are generally a nanometer wide, up to hundreds of microns long and the carbon nanotubes have anisotropic structures. They are processed to have shorter lengths but they need to be sorted by diameter and chirality. Thus counter-current chromatography methods developed for large molecules are applied to separate these compounds. A modified mixer-settler spiral CCC rotor made with 3 D printed disks was used with a polyethylene glycol-dextran 2-phase solvent system and a surfactant gradient to purify the major species in a commercial preparation. We isolated the semi-conducting single walled carbon nanotube chiral species identified by UV spectral analysis. The further development of spiral counter-current chromatography instrumentation and methods will enable the scalable purification of carbon nanotubes useful for the next generation electronics.

  8. Magnetic order driven by orbital ordering in the semiconducting KFe1.5Se2

    NASA Astrophysics Data System (ADS)

    Jiang, Qing; Yao, Dao-Xin

    2016-04-01

    The two-orbital Hubbard model is studied numerically by using the Hartree-Fock approximation in both real space and momentum space, and the ground-state properties of the alkali metal iron selenide semiconducting KFe1.5Se2 are investigated. A rhombus-type Fe vacancy order with stripetype antiferromagnetic (AFM) order is found, as was observed in neutron scattering experiments [J. Zhao, et al., Phys. Rev. Lett. 109, 267003 (2012)]. Hopping parameters are obtained by fitting the experimentally observed stripe AFM phase in real space. These hopping parameters are then used to study the ground-state properties of the semiconductor in momentum space. It is found to be a strongly correlated system with a large on-site Coulomb repulsion U, similar to the AFM Mott insulator — the parent compound of copper oxide superconductors. We also find that the electronic occupation numbers and magnetizations in the d xz and d yz orbitals become different simultaneously when U > U c (˜3.4 eV), indicating orbital ordering. These results imply that the rotational symmetry between the two orbitals is broken by orbital ordering and thus drives the strong anisotropy of the magnetic coupling that has been observed by experiments and that the stripe-type AFM order in this compound may be caused by orbital ordering together with the observed large anisotropy.

  9. Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

    NASA Technical Reports Server (NTRS)

    Mahan, John E.

    1989-01-01

    Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

  10. Noble metal-comparable SERS enhancement from semiconducting metal oxides by making oxygen vacancies

    NASA Astrophysics Data System (ADS)

    Cong, Shan; Yuan, Yinyin; Chen, Zhigang; Hou, Junyu; Yang, Mei; Su, Yanli; Zhang, Yongyi; Li, Liang; Li, Qingwen; Geng, Fengxia; Zhao, Zhigang

    2015-07-01

    Surface-enhanced Raman spectroscopy (SERS) represents a very powerful tool for the identification of molecular species, but unfortunately it has been essentially restricted to noble metal supports (Au, Ag and Cu). While the application of semiconductor materials as SERS substrate would enormously widen the range of uses for this technique, the detection sensitivity has been much inferior and the achievable SERS enhancement was rather limited, thereby greatly limiting the practical applications. Here we report the employment of non-stoichiometric tungsten oxide nanostructure, sea urchin-like W18O49 nanowire, as the substrate material, to magnify the substrate-analyte molecule interaction, leading to significant magnifications in Raman spectroscopic signature. The enrichment of surface oxygen vacancy could bring additional enhancements. The detection limit concentration was as low as 10-7 M and the maximum enhancement factor was 3.4 × 105, in the rank of the highest sensitivity, to our best knowledge, among semiconducting materials, even comparable to noble metals without `hot spots'.

  11. Quantitative determination of sheet resistance of semiconducting films by microwave near-field probing

    NASA Astrophysics Data System (ADS)

    Reznik, Alexander N.; Demidov, Evgenii V.

    2013-03-01

    We propose and experimentally approve a method for determining the sheet resistance Rsh of a semiconducting film on a dielectric substrate from the near-field (NF) microwave measurements data. The method is based on the earlier developed theory for NF microscopy of plane layered media. The fitting parameters of the theoretical model were sought using a universal set of calibration standards, specifically, bulk-homogeneous Si slabs varying in the doping degree. Experimental investigations were assisted by a 3 GHz resonance probe with an aperture of about 1 mm. As test structures we used n-GaN films of 0.03-15 kΩ sheet resistance, grown on a sapphire substrate. The accuracy of the technique was assessed by comparing the NF probing data with the dc measurements of Rsh in the Van-der-Pauw (VDP) method. For Rsh < 4 kΩ the root-mean-square deviation of NF from VDP data is approximately equal to 20%.

  12. Photoluminescence spectroscopy and lifetime measurements from self assembled semiconducting quantum dot- metal nanoparticle hybrid arrays

    NASA Astrophysics Data System (ADS)

    Haridas, M.; Basu, J. K.

    2011-03-01

    We demonstrate how the emission properties of a hybrid array consisting of semiconducting quantum dot (QD) and metal nanoparticles (NP) can be controlled by varying the density and distance between QD and NP independently. Our hybrid system consists of chemically synthesized cadmium selenide quantum dots (CdSe QDs) and polymer capped gold nanoparticles (Au NP) embedded in a block copolymer matrix having the topology of cylinders oriented perpendicular to the substrate. We have prepared hybrid arrays with two different densities of CdSe QDs (ρQD) each having same Au NP densities (ρAu) . The photoluminescence measurements (PL) from such hybrid system shows enhancement in emission with increase in ρAu , compared to the CdSe QD film and the enhancement factor is lower for hybrid films with high ρQD . The lifetime measurement shows double exponent PL decay with systematic reduction in exciton lifetime for hybrid arrays with respect to ρAu . The film with high ρQD shows larger reduction in lifetime. Similarly, the amplitudes of the two relaxations switch over with increase in ρAu . It is clear that the shorter time becomes the dominant relaxation mode with increasing ρAu . Observed phenomena have been explained in terms of exciton plasmon interaction .

  13. Ratiometric luminescent detection of bacterial spores with terbium chelated semiconducting polymer dots.

    PubMed

    Li, Qiong; Sun, Kai; Chang, Kaiwen; Yu, Jiangbo; Chiu, Daniel T; Wu, Changfeng; Qin, Weiping

    2013-10-01

    We report a ratiometric fluorescent sensor based on semiconducting polymer dots chelated with terbium ions to detect bacterial spores in aqueous solution. Fluorescent polyfluorene (PFO) dots serve as a scaffold to coordinate with lanthanide ions that can be sensitized by calcium dipicolinate (CaDPA), an important biomarker of bacterial spores. The absorption band of PFO dots extends to deep UV region, allowing both the reference and the sensitizer can be excited with a single wavelength (~275 nm). The fluorescence of PFO remains constant as a reference, while the Tb(3+) ions exhibit enhanced luminescence upon binding with DPA. The sharp fluorescence peaks of β-phase PFO dots and the narrow-band emissions of Tb(3+) ions enable ratiometric and sensitive CaDPA detection with a linear response over nanomolar concentration and a detection limit of ~0.2 nM. The Pdots based sensor also show excellent selectivity to CaDPA over other aromatic ligands. Our results indicate that the Tb(3+) chelated Pdots sensor is promising for sensitive and rapid detection of bacterial spores.

  14. Charge Transport in Two-Photon Semiconducting Structures for Solar Fuels.

    PubMed

    Liu, Guohua; Du, Kang; Haussener, Sophia; Wang, Kaiying

    2016-10-20

    Semiconducting heterostructures are emerging as promising light absorbers and offer effective electron-hole separation to drive solar chemistry. This technology relies on semiconductor composites or photoelectrodes that work in the presence of a redox mediator and that create cascade junctions to promote surface catalytic reactions. Rational tuning of their structures and compositions is crucial to fully exploit their functionality. In this review, we describe the possibilities of applying the two-photon concept to the field of solar fuels. A wide range of strategies including the indirect combination of two semiconductors by a redox couple, direct coupling of two semiconductors, multicomponent structures with a conductive mediator, related photoelectrodes, as well as two-photon cells are discussed for light energy harvesting and charge transport. Examples of charge extraction models from the literature are summarized to understand the mechanism of interfacial carrier dynamics and to rationalize experimental observations. We focus on a working principle of the constituent components and linking the photosynthetic activity with the proposed models. This work gives a new perspective on artificial photosynthesis by taking simultaneous advantages of photon absorption and charge transfer, outlining an encouraging roadmap towards solar fuels.

  15. Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots

    PubMed Central

    Biswas, Chandan; Kim, Yonghwan; Lee, Young Hee

    2016-01-01

    Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ~5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies. PMID:27886274

  16. Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes.

    PubMed

    Yang, Feng; Wang, Xiao; Si, Jia; Zhao, Xiulan; Qi, Kuo; Jin, Chuanhong; Zhang, Zeyao; Li, Meihui; Zhang, Daqi; Yang, Juan; Zhang, Zhiyong; Xu, Zhi; Peng, Lian-Mao; Bai, Xuedong; Li, Yan

    2017-01-24

    Semiconducting single-walled carbon nanotubes (s-SWNTs) with diameters of 1.0-1.5 nm (with similar bandgap to crystalline silicon) are highly desired for nanoelectronics. Up to date, the highest reported content of s-SWNTs as-grown is ∼97%, which is still far below the daunting requirements of high-end applications. Herein, we report a feasible and green pathway to use H2O vapor to modulate the structure of the intermetallic W6Co7 nanocrystals. By using the resultant W6Co7 nanocatalysts with a high percentage of (1 0 10) planes as structural templates, we realized the direct growth of s-SWNT with the purity of ∼99%, in which ∼97% is (14,4) tubes (diameter 1.29 nm). H2O can also act as an environmentally friendly and facile etchant for eliminating metallic SWNTs, and the content of s-SWNTs was further improved to 99.8% and (14,4) tubes to 98.6%. High purity s-SWNTs with even bandgap determined by their uniform structure can be used for the exquisite applications in different fields.

  17. Self-assembling semiconducting polymers--rods and gels from electronic materials.

    PubMed

    Clark, Andrew P-Z; Shi, Chenjun; Ng, Benny C; Wilking, James N; Ayzner, Alexander L; Stieg, Adam Z; Schwartz, Benjamin J; Mason, Thomas G; Rubin, Yves; Tolbert, Sarah H

    2013-02-26

    In an effort to favor the formation of straight polymer chains without crystalline grain boundaries, we have synthesized an amphiphilic conjugated polyelectrolyte, poly(fluorene-alt-thiophene) (PFT), which self-assembles in aqueous solutions to form cylindrical micelles. In contrast to many diblock copolymer assemblies, the semiconducting backbone runs parallel, not perpendicular, to the long axis of the cylindrical micelle. Solution-phase micelle formation is observed by X-ray and visible light scattering. The micelles can be cast as thin films, and the cylindrical morphology is preserved in the solid state. The effects of self-assembly are also observed through spectral shifts in optical absorption and photoluminescence. Solutions of higher-molecular-weight PFT micelles form gel networks at sufficiently high aqueous concentrations. Rheological characterization of the PFT gels reveals solid-like behavior and strain hardening below the yield point, properties similar to those found in entangled gels formed from surfactant-based micelles. Finally, electrical measurements on diode test structures indicate that, despite a complete lack of crystallinity in these self-assembled polymers, they effectively conduct electricity.

  18. Magnetic field induced quantum dot brightening in liquid crystal synergized magnetic and semiconducting nanoparticle composite assemblies

    DOE PAGES

    Amaral, Jose Jussi; Wan, Jacky; Rodarte, Andrea L.; ...

    2014-10-22

    The design and development of multifunctional composite materials from artificial nano-constituents is one of the most compelling current research areas. This drive to improve over nature and produce ‘meta-materials’ has met with some success, but results have proven limited with regards to both the demonstration of synergistic functionalities and in the ability to manipulate the material properties post-fabrication and in situ. Here, magnetic nanoparticles (MNPs) and semiconducting quantum dots (QDs) are co-assembled in a nematic liquid crystalline (LC) matrix, forming composite structures in which the emission intensity of the quantum dots is systematically and reversibly controlled with a small appliedmore » magnetic field (<100 mT). This magnetic field-driven brightening, ranging between a two- to three-fold peak intensity increase, is a truly cooperative effect: the LC phase transition creates the co-assemblies, the clustering of the MNPs produces LC re-orientation at atypical low external field, and this re-arrangement produces compaction of the clusters, resulting in the detection of increased QD emission. These results demonstrate a synergistic, reversible, and an all-optical process to detect magnetic fields and additionally, as the clusters are self-assembled in a fluid medium, they offer the possibility for these sensors to be used in broad ranging fluid-based applications.« less

  19. Boosting photoresponse in silicon metal-semiconductor-metal photodetector using semiconducting quantum dots

    NASA Astrophysics Data System (ADS)

    Biswas, Chandan; Kim, Yonghwan; Lee, Young Hee

    2016-11-01

    Silicon based metal-semiconductor-metal (MSM) photodetectors have faster photogeneration and carrier collection across the metal-semiconductor Schottky contacts, and CMOS integratibility compared to conventional p-n junction photodetectors. However, its operations are limited by low photogeneration, inefficient carrier-separation, and low mobility. Here, we show a simple and highly effective approach for boosting Si MSM photodetector efficiency by uniformly decorating semiconducting CdSe quantum dots on Si channel (Si-QD). Significantly higher photocurrent on/off ratio was achieved up to over 500 compared to conventional Si MSM photodetector (on/off ratio ~5) by increasing photogeneration and improving carrier separation. Furthermore, a substrate-biasing technique invoked wide range of tunable photocurrent on/off ratio in Si-QD photodetector (ranging from 2.7 to 562) by applying suitable combinations of source-drain and substrate biasing conditions. Strong photogeneration and carrier separation were achieved by employing Stark effect into the Si-QD hybrid system. These results highlight a promising method for enhancing Si MSM photodetector efficiency more than 100 times and simultaneously compatible with current silicon technologies.

  20. Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

    NASA Astrophysics Data System (ADS)

    Hu, PingAn; Li, Kun; Chen, Weilin; Peng, Li; Chu, Daping; O'Neill, William

    2010-07-01

    A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (Ion/Ioff ratio: 1 × 103; mobility: 0.071 cm2 V-1 s-1).