Nonlinear electrokinetic phenomena in microfluidic devices

NASA Astrophysics Data System (ADS)

Ben, Yuxing

This thesis addresses nonlinear electrokinetic mechanisms for transporting fluid and particles in microfluidic devices for potential applications in biomedical chips, microelectronic cooling and micro-fuel cells. Nonlinear electrokinetics have many advantages, such as low voltage, low power, high velocity, and no significant gas formation in the electrolyte. However, they involve new and complex charging and flow mechanisms that are still not fully understood or explored. Linear electrokinetic fingering that occurs when a fluid with a lower electrolyte concentration advances into one with a higher concentration is first analyzed. Unlike earlier miscible fingering theories, the linear stability analysis is carried out in the self-similar coordinates of the diffusing front. This new spectral theory is developed for small-amplitude gravity and viscous miscible fingering phenomena in general and applied to electrokinetic miscible fingering specifically. Transient electrokinetic fingering is shown to be insignificant in sub-millimeter micro-devices. Nonlinear electroosmotic flow around an ion-exchange spherical granule is studied next. When an electric field is applied across a conducting and ion-selective porous granule in an electrolyte solution, a polarized surface layer with excess counter-ions is created. The flux-induced polarization produces a nonlinear slip velocity to produce micro-vortices around this sphere. This polarization layer is reduced by convection at high velocity. Two velocity scalings at low and high electric fields are derived and favorably compared with experimental results. A mixing device based on this mechanism is shown to produce mixing efficiency 10-100 times higher than molecular diffusion. Finally, AC nonlinear electrokinetic flow on planar electrodes is studied. Two double layer charging mechanisms are responsible for the flow---one due to capacitive charging of ions from the bulk electrolyte and one due to Faradaic reactions at the

Micro-/nanoscale multi-field coupling in nonlinear photonic devices

NASA Astrophysics Data System (ADS)

Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

2017-08-01

The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

Nonlinear Characterization of Half and Full Wavelength Power Ultrasonic Devices

NASA Astrophysics Data System (ADS)

Mathieson, Andrew; Cerisola, Niccolò; Cardoni, Andrea

It is well known that power ultrasonic devices whilst driven under elevated excitation levels exhibit nonlinear behaviors. If no attempt is made to understand and subsequently control these behaviors, these devices can exhibit poor performance or even suffer premature failure. This paper presents an experimental method for the dynamic characterization of a commercial ultrasonic transducer for bone cutting applications (Piezosurgery® Device) operated together with a variety of rod horns that are tuned to operate in a longitudinal mode of vibration. Near resonance responses, excited via a burst sine sweep method were used to identify nonlinear responses exhibited by the devices, while experimental modal analysis was performed to identify the modal parameters of the longitudinal modes of vibration of the assemblies between 0-80 kHz. This study tries to provide an understanding of the effects that geometry and material choices may have on the nonlinear behavior of a tuned device.

Semiconductor Nonlinear Waveguide Devices and Integrated-Mirror Etalons

NASA Astrophysics Data System (ADS)

Chuang, Chih-Li.

This dissertation investigates different III-V semiconductor devices for applications in nonlinear photonics. These include passive and active nonlinear directional couplers, current-controlled optical phase shifter, and integrated -mirror etalons. A novel method to find the propagation constants of an optical waveguide is introduced. The same method is applied, with minor modifications, to find the coupling length of a directional coupler. The method presented provides a tool for the design of optical waveguide devices. The design, fabrication, and performance of a nonlinear directional coupler are presented. This device uses light intensity to control the direction of light coming out. This is achieved through photo-generated-carriers mechanism in the picosecond regime and through the optical Stark effect in the femtosecond regime. A two-transverse -dimensions beam-propagation computation is used to model the switching behavior in the nonlinear directional coupler. It is found that, by considering the pulse degradation effect, the computation agrees well with experiments. The possibility of operating a nonlinear directional coupler with gain is investigated. It is concluded that by injecting current into the nonlinear directional coupler does not provide the advantages hoped for and the modelling using 2-D beam -propagation methods verifies that. Using current injection to change the refractive index of a waveguide, an optical phase shifter is constructed. This device has the merit of delivering large phase shift with almost no intensity modulation. A phase shift as large as 3pi is produced in a waveguide 400 μm in length. Finally, a new structure, grown by the molecular beam epitaxy machine, is described. The structure consists of two quarter-wave stacks and a spacer layer to form an integrated-mirror etalon. The theory, design principles, spectral analyses are discussed with design examples to clarify the ideas. Emphasis is given to the vertical-cavity surface

Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

PubMed

Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

2014-12-10

Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

Stability, Nonlinearity and Reliability of Electrostatically Actuated MEMS Devices

PubMed Central

Zhang, Wen-Ming; Meng, Guang; Chen, Di

2007-01-01

Electrostatic micro-electro-mechanical system (MEMS) is a special branch with a wide range of applications in sensing and actuating devices in MEMS. This paper provides a survey and analysis of the electrostatic force of importance in MEMS, its physical model, scaling effect, stability, nonlinearity and reliability in detail. It is necessary to understand the effects of electrostatic forces in MEMS and then many phenomena of practical importance, such as pull-in instability and the effects of effective stiffness, dielectric charging, stress gradient, temperature on the pull-in voltage, nonlinear dynamic effects and reliability due to electrostatic forces occurred in MEMS can be explained scientifically, and consequently the great potential of MEMS technology could be explored effectively and utilized optimally. A simplified parallel-plate capacitor model is proposed to investigate the resonance response, inherent nonlinearity, stiffness softened effect and coupled nonlinear effect of the typical electrostatically actuated MEMS devices. Many failure modes and mechanisms and various methods and techniques, including materials selection, reasonable design and extending the controllable travel range used to analyze and reduce the failures are discussed in the electrostatically actuated MEMS devices. Numerical simulations and discussions indicate that the effects of instability, nonlinear characteristics and reliability subjected to electrostatic forces cannot be ignored and are in need of further investigation.

Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices

DTIC Science & Technology

1998-05-12

SUBTITLE " Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices" 6. AUTHORS Michael B. Miller 5. FUNDING NUMBERS F49620-97...ii. Lü. Ionic Self-Assembled Monolayer (ISAM) Nonlinear Optical Thin Films and Devices Final Technical Report Performance Period: 15 August 1997...Investigator F&S. Inc.N ̂ 1. INTRODUCTION .’ 2 2. PROGRAM TASK REVIEW 2 3. BACKGROUND 4 3.1 NONLINEAR OPTICAL THIN FILMS 4 3.2 IONIC SELF

Gas Sensors Based on Semiconducting Metal Oxide One-Dimensional Nanostructures

PubMed Central

Huang, Jin; Wan, Qing

2009-01-01

This article provides a comprehensive review of recent (2008 and 2009) progress in gas sensors based on semiconducting metal oxide one-dimensional (1D) nanostructures. During last few years, gas sensors based on semiconducting oxide 1D nanostructures have been widely investigated. Additionally, modified or doped oxide nanowires/nanobelts have also been synthesized and used for gas sensor applications. Moreover, novel device structures such as electronic noses and low power consumption self-heated gas sensors have been invented and their gas sensing performance has also been evaluated. Finally, we also point out some challenges for future investigation and practical application. PMID:22303154

Nonlinear optimization of acoustic energy harvesting using piezoelectric devices.

PubMed

Lallart, Mickaeël; Guyomar, Daniel; Richard, Claude; Petit, Lionel

2010-11-01

In the first part of the paper, a single degree-of-freedom model of a vibrating membrane with piezoelectric inserts is introduced and is initially applied to the case when a plane wave is incident with frequency close to one of the resonance frequencies. The model is a prototype of a device which converts ambient acoustical energy to electrical energy with the use of piezoelectric devices. The paper then proposes an enhancement of the energy harvesting process using a nonlinear processing of the output voltage of piezoelectric actuators, and suggests that this improves the energy conversion and reduces the sensitivity to frequency drifts. A theoretical discussion is given for the electrical power that can be expected making use of various models. This and supporting experimental results suggest that a nonlinear optimization approach allows a gain of up to 10 in harvested energy and a doubling of the bandwidth. A model is introduced in the latter part of the paper for predicting the behavior of the energy-harvesting device with changes in acoustic frequency, this model taking into account the damping effect and the frequency changes introduced by the nonlinear processes in the device.

High-mobility ultrathin semiconducting films prepared by spin coating

NASA Astrophysics Data System (ADS)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Two-dimensional semiconducting gold

NASA Astrophysics Data System (ADS)

Liu, Ning; Jin, Shifeng; Guo, Liwei; Wang, Gang; Shao, Hezhu; Chen, Liang; Chen, Xiaolong

2017-04-01

We show that two-dimensional (2D) honeycomb gold (HG) could be thermodynamic and lattice dynamic stable owing in part to the relativistic effect and electronic configuration. HG exhibits a covalent characteristic in its bonding and is a semiconductor with an energy gap of 0.1 eV at the Brillouin zone K point caused by strong spin-orbit coupling. The gap can be further widened to about 0.3 eV if HG is tailored into nanoribbons with the armchair type of edges. In contrast, 2D close-packed gold (CPG) is metallic with a small effective mass. Both HG and CPG are more transparent to visible light than graphene. They are expected to outperform graphene as a semiconducting material in an electronic logic device and as a transparent conducting material in fabricating a display device, respectively.

Surface physics of semiconducting nanowires

NASA Astrophysics Data System (ADS)

Amato, Michele; Rurali, Riccardo

2016-02-01

Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock.

PubMed

Che, Yuchi; Wang, Chuan; Liu, Jia; Liu, Bilu; Lin, Xue; Parker, Jason; Beasley, Cara; Wong, H-S Philip; Zhou, Chongwu

2012-08-28

The development of guided chemical vapor deposition (CVD) growth of single-walled carbon nanotubes provides a great platform for wafer-scale integration of aligned nanotubes into circuits and functional electronic systems. However, the coexistence of metallic and semiconducting nanotubes is still a major obstacle for the development of carbon-nanotube-based nanoelectronics. To address this problem, we have developed a method to obtain predominantly semiconducting nanotubes from direct CVD growth. By using isopropyl alcohol (IPA) as the carbon feedstock, a semiconducting nanotube purity of above 90% is achieved, which is unambiguously confirmed by both electrical and micro-Raman measurements. Mass spectrometric study was performed to elucidate the underlying chemical mechanism. Furthermore, high performance thin-film transistors with an on/off ratio above 10(4) and mobility up to 116 cm(2)/(V·s) have been achieved using the IPA-synthesized nanotube networks grown on silicon substrate. The method reported in this contribution is easy to operate and the results are highly reproducible. Therefore, such semiconducting predominated single-walled carbon nanotubes could serve as an important building block for future practical and scalable carbon nanotube electronics.

Evaluation of polymer based third order nonlinear integrated optics devices

NASA Astrophysics Data System (ADS)

Driessen, A.; Hoekstra, H. J. W. M.; Blom, F. C.; Horst, F.; Krijnen, G. J. M.; van Schoot, J. B. P.; Lambeck, P. V.; Popma, Th. J. A.; Diemeer, M. B.

1998-01-01

Nonlinear polymers are promising materials for high speed active integrated optics devices. In this paper we evaluate the perspectives polymer based nonlinear optical devices can offer. Special attention is directed to the materials aspects. In our experimental work we applied mainly Akzo Nobel DANS side-chain polymer that exhibits large second and third order coefficients. This material has been characterized by third harmonic generation, z-scan and pump-probe measurements. In addition, various waveguiding structures have been used to measure the nonlinear absorption (two photon absorption) on a ps time-scale. Finally an integrated optics Mach Zehnder interferometer has been realized and evaluated. It is shown that the DANS side-chain polymer has many of the desired properties: the material is easily processable in high-quality optical waveguiding structures, has low linear absorption and its nonlinearity has a pure electronic origin. More materials research has to be done to arrive at materials with higher nonlinear coefficients to allow switching at moderate light intensity ( < 1 W peak power) and also with lower nonlinear absorption coefficients.

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes.

PubMed

Liu, Yang; Wei, Nan; Zhao, Qingliang; Zhang, Dehui; Wang, Sheng; Peng, Lian-Mao

2015-04-21

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

Molecular Strategies for Morphology Control in Semiconducting Polymers for Optoelectronics.

PubMed

Rahmanudin, Aiman; Sivula, Kevin

2017-06-28

Solution-processable semiconducting polymers have been explored over the last decades for their potential applications in inexpensively fabricated transistors, diodes and photovoltaic cells. However, a remaining challenge in the field is to control the solid-state self-assembly of polymer chains in thin films devices, as the aspects of (semi)crystallinity, grain boundaries, and chain entanglement can drastically affect intra-and inter-molecular charge transport/transfer and thus device performance. In this short review we examine how the aspects of molecular weight and chain rigidity affect solid-state self-assembly and highlight molecular engineering strategies to tune thin film morphology. Side chain engineering, flexibly linking conjugation segments, and block co-polymer strategies are specifically discussed with respect to their effect on field effect charge carrier mobility in transistors and power conversion efficiency in solar cells. Example systems are taken from recent literature including work from our laboratories to illustrate the potential of molecular engineering semiconducting polymers.

High-mobility ultrathin semiconducting films prepared by spin coating.

PubMed

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

2016-10-01

Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces.

Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating.

PubMed

Hu, Jinghang; Zhang, Jianchi; Fu, Zongyuan; Weng, Junhui; Chen, Weibo; Ding, Shijin; Jiang, Yulong; Zhu, Guodong

2015-03-25

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. During film deposition from the blend solution, spinodal decomposition induced phase separation, resulting in discrete semiconducting phase whose electrical property could be modulated by the continuous ferroelectric phase. However, blend films processed by common spin coating method showed extremely rough surfaces, even comparable to the film thickness, which caused large electrical leakage and thus compromised the resistive switching performance. To improve film roughness and thus increase the productivity of these resistive devices, we developed temperature controlled spin coating technique to carefully adjust the phase separation process. Here we reported our experimental results from the blend films of ferroelectric poly(vinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) and semiconducting poly(3-hexylthiophene) (P3HT). We conducted a series of experiments at various deposition temperatures ranging from 20 to 90 °C. The resulting films were characterized by AFM, SEM, and VPFM to determine their structure and roughness. Film roughness first decreased and then increased with the increase of deposition temperature. Electrical performance was also characterized and obviously improved insulating property was obtained from the films deposited between 50 and 70 °C. By temperature control during film deposition, it is convenient to efficiently fabricate ferroelectric/semiconducting blend films with good electrical bistability.

Structural Ordering of Semiconducting Polymers and Small-Molecules for Organic Electronics

NASA Astrophysics Data System (ADS)

O'Hara, Kathryn Allison

Semiconducting polymers and small-molecules can be readily incorporated into electronic devices such as organic photovoltaics (OPVs), thermoelectrics (OTEs), organic light emitting diodes (OLEDs), and organic thin film transistors (OTFTs). Organic materials offer the advantage of being processable from solution to form flexible and lightweight thin films. The molecular design, processing, and resulting thin film morphology of semiconducting polymers drastically affect the optical and electronic properties. Charge transport within films of semiconducting polymers relies on the nanoscale organization to ensure electronic coupling through overlap of molecular orbitals and to provide continuous transport pathways. While the angstrom-scale packing details can be studied using X-ray scattering methods, an understanding of the mesoscale, or the length scale over which smaller ordered regions connect, is much harder to achieve. Grain boundaries play an important role in semiconducting polymer thin films where the average grain size is much smaller than the total distance which charges must traverse in order to reach the electrodes in a device. The majority of semiconducting polymers adopt a lamellar packing structure in which the conjugated backbones align in parallel pi-stacks separated by the alkyl side-chains. Only two directions of transport are possible--along the conjugated backbone and in the pi-stacking direction. Currently, the discussion of transport between crystallites is centered around the idea of tie-chains, or "bridging" polymer chains connecting two ordered regions. However, as molecular structures become increasingly complex with the development of new donor-acceptor copolymers, additional forms of connectivity between ordered domains should be considered. High resolution transmission electron microscopy (HRTEM) is a powerful tool for directly imaging the crystalline grain boundaries in polymer and small-molecule thin films. Recently, structures

Understanding nonlinear vibration behaviours in high-power ultrasonic surgical devices

PubMed Central

Mathieson, Andrew; Cardoni, Andrea; Cerisola, Niccolò; Lucas, Margaret

2015-01-01

Ultrasonic surgical devices are increasingly used in oral, craniofacial and maxillofacial surgery to cut mineralized tissue, offering the surgeon high accuracy with minimal risk to nerve and vessel tissue. Power ultrasonic devices operate in resonance, requiring their length to be a half-wavelength or multiple-half-wavelength. For bone surgery, devices based on a half-wavelength have seen considerable success, but longer multiple-half-wavelength endoscopic devices have recently been proposed to widen the range of surgeries. To provide context for these developments, some examples of surgical procedures and the associated designs of ultrasonic cutting tips are presented. However, multiple-half-wavelength components, typical of endoscopic devices, have greater potential to exhibit nonlinear dynamic behaviours that have a highly detrimental effect on device performance. Through experimental characterization of the dynamic behaviour of endoscopic devices, it is demonstrated how geometrical features influence nonlinear dynamic responses. Period doubling, a known route to chaotic behaviour, is shown to be significantly influenced by the cutting tip shape, whereas the cutting tip has only a limited effect on Duffing-like responses, particularly the shape of the hysteresis curve, which is important for device stability. These findings underpin design, aiming to pave the way for a new generation of ultrasonic endoscopic surgical devices. PMID:27547081

Piezo-phototronic effect devices

DOEpatents

Wang, Zhong L.; Yang, Qing

2013-09-10

A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

Assembly of ordered carbon shells on semiconducting nanomaterials

DOEpatents

Sutter, Eli Anguelova; Sutter, Peter Werner

2010-05-11

In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

Assembly of ordered carbon shells on semiconducting nanomaterials

DOEpatents

Sutter, Eli Anguelova; Sutter, Peter Werner

2012-10-02

In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

DOEpatents

Sharp, Kenneth G.; D'Errico, John J.

1988-01-01

The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

An Energy Saving Green Plug Device for Nonlinear Loads

NASA Astrophysics Data System (ADS)

Bloul, Albe; Sharaf, Adel; El-Hawary, Mohamed

2018-03-01

The paper presents a low cost a FACTS Based flexible fuzzy logic based modulated/switched tuned arm filter and Green Plug compensation (SFC-GP) scheme for single-phase nonlinear loads ensuring both voltage stabilization and efficient energy utilization. The new Green Plug-Switched filter compensator SFC modulated LC-Filter PWM Switched Capacitive Compensation Devices is controlled using a fuzzy logic regulator to enhance power quality, improve power factor at the source and reduce switching transients and inrush current conditions as well harmonic contents in source current. The FACTS based SFC-GP Device is a member of family of Green Plug/Filters/Compensation Schemes used for efficient energy utilization, power quality enhancement and voltage/inrush current/soft starting control using a dynamic error driven fuzzy logic controller (FLC). The device with fuzzy logic controller is validated using the Matlab / Simulink Software Environment for enhanced power quality (PQ), improved power factor and reduced inrush currents. This is achieved using modulated PWM Switching of the Filter-Capacitive compensation scheme to cope with dynamic type nonlinear and inrush cyclical loads..

Surface passivation of semiconducting oxides by self-assembled nanoparticles

PubMed Central

Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

2016-01-01

Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

NASA Technical Reports Server (NTRS)

Theofylaktos, Onoufrios (Inventor); Meador, Michael A. (Inventor); Miranda, Felix A. (Inventor); Pinto, Nicholas (Inventor); Mueller, Carl H. (Inventor); Santos-Perez, Javier (Inventor)

2017-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Graphene Based Reversible Nano-Switch/Sensor Schottky Diode (NANOSSSD) Device

NASA Technical Reports Server (NTRS)

Miranda, Felix A. (Inventor); Theofylaktos, Onoufrios (Inventor); Pinto, Nicholas J. (Inventor); Mueller, Carl H. (Inventor); Santos, Javier (Inventor); Meador, Michael A. (Inventor)

2015-01-01

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one layer of graphene formed on the electrode. The at least one layer of graphene provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Nanostructured p-type semiconducting transparent oxides: promising materials for nano-active devices and the emerging field of "transparent nanoelectronics".

PubMed

Banerjee, Arghya; Chattopadhyay, Kalyan K

2008-01-01

Transparent conducting oxides (TCO) with p-type semiconductivity have recently gained renewed interest for the fabrication of all-oxide transparent junctions, having potential applications in the emerging field of 'Transparent' or 'Invisible Electronics'. This kind of transparent junctions can be used as a "functional" window, which will transmit visible portion of solar radiation, but generates electricity by the absorption of the UV part. Therefore, these devices can be used as UV shield as well as UV cells. In this report, a brief review on the research activities on various p-TCO materials is furnished along-with the fabrication of different transparent p-n homojunction, heterojunction and field-effect transistors. Also the reason behind the difficulties in obtaining p-TCO materials and possible solutions are discussed in details. Considerable attention is given in describing the various patent generations on the field of p-TCO materials as well as transparent p-n junction diodes and light emitting devices. Also, most importantly, a detailed review and patenting activities on the nanocrystalline p-TCO materials and transparent nano-active device fabrication are furnished with considerable attention. And finally, a systematic description on the fabrication and characterization of nanocrystalline, p-type transparent conducting CuAlO(2) thin film, deposited by cost-effective low-temperature DC sputtering technique, by our group, is furnished in details. These p-TCO micro/nano-materials have wide range of applications in the field of optoelectronics, nanoelectronics, space sciences, field-emission displays, thermoelectric converters and sensing devices.

Optically transparent semiconducting polymer nanonetwork for flexible and transparent electronics

PubMed Central

Yu, Kilho; Park, Byoungwook; Kim, Geunjin; Kim, Chang-Hyun; Park, Sungjun; Kim, Jehan; Jung, Suhyun; Jeong, Soyeong; Kwon, Sooncheol; Kang, Hongkyu; Kim, Junghwan; Yoon, Myung-Han; Lee, Kwanghee

2016-01-01

Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes. PMID:27911774

Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

DTIC Science & Technology

2007-03-01

COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Lonnie Carlson, Major...DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE THESIS Presented to the Faculty Department of Engineering Physics Graduate School...DISTRIBUTION UNLIMITED AFIT/GNE/ENP/07-01 COBALT DOPING OF SEMICONDUCTING BORON CARBIDE USING COBALTOCENE Lonnie

Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro-Optic Devices

DTIC Science & Technology

1992-01-07

COVERED 4. TITLE AND SUBTITLE Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro - Optic Devices 5a. CONTRACT NUMBER 5b. GRANT...generators, computational devices and the like. 15. SUBJECT TERMS optical devices, electro - optical devices, optical signal processing...THEREOF IN OPTICAL AND ELECTRO - OPTIC DEVICES [75] Inventors: Le*lie H. Sperling, Bethlehem; Clarence J. Murphy, Stroudsburg; Warren A. Rosen

Optimal antibunching in passive photonic devices based on coupled nonlinear resonators

NASA Astrophysics Data System (ADS)

Ferretti, S.; Savona, V.; Gerace, D.

2013-02-01

We propose the use of weakly nonlinear passive materials for prospective applications in integrated quantum photonics. It is shown that strong enhancement of native optical nonlinearities by electromagnetic field confinement in photonic crystal resonators can lead to single-photon generation only exploiting the quantum interference of two coupled modes and the effect of photon blockade under resonant coherent driving. For realistic system parameters in state of the art microcavities, the efficiency of such a single-photon source is theoretically characterized by means of the second-order correlation function at zero-time delay as the main figure of merit, where major sources of loss and decoherence are taken into account within a standard master equation treatment. These results could stimulate the realization of integrated quantum photonic devices based on non-resonant material media, fully integrable with current semiconductor technology and matching the relevant telecom band operational wavelengths, as an alternative to single-photon nonlinear devices based on cavity quantum electrodynamics with artificial atoms or single atomic-like emitters.

Step-response of a torsional device with multiple discontinuous non-linearities: Formulation of a vibratory experiment

NASA Astrophysics Data System (ADS)

Krak, Michael D.; Dreyer, Jason T.; Singh, Rajendra

2016-03-01

A vehicle clutch damper is intentionally designed to contain multiple discontinuous non-linearities, such as multi-staged springs, clearances, pre-loads, and multi-staged friction elements. The main purpose of this practical torsional device is to transmit a wide range of torque while isolating torsional vibration between an engine and transmission. Improved understanding of the dynamic behavior of the device could be facilitated by laboratory measurement, and thus a refined vibratory experiment is proposed. The experiment is conceptually described as a single degree of freedom non-linear torsional system that is excited by an external step torque. The single torsional inertia (consisting of a shaft and torsion arm) is coupled to ground through parallel production clutch dampers, which are characterized by quasi-static measurements provided by the manufacturer. Other experimental objectives address physical dimensions, system actuation, flexural modes, instrumentation, and signal processing issues. Typical measurements show that the step response of the device is characterized by three distinct non-linear regimes (double-sided impact, single-sided impact, and no-impact). Each regime is directly related to the non-linear features of the device and can be described by peak angular acceleration values. Predictions of a simplified single degree of freedom non-linear model verify that the experiment performs well and as designed. Accordingly, the benchmark measurements could be utilized to validate non-linear models and simulation codes, as well as characterize dynamic parameters of the device including its dissipative properties.

Nonlinear current-voltage characteristics based on semiconductor nanowire networks enable a new concept in thermoelectric device optimization

NASA Astrophysics Data System (ADS)

Diaz Leon, Juan J.; Norris, Kate J.; Hartnett, Ryan J.; Garrett, Matthew P.; Tompa, Gary S.; Kobayashi, Nobuhiko P.

2016-08-01

Thermoelectric (TE) devices that produce electric power from heat are driven by a temperature gradient (Δ T = T_{{hot}} - T_{{cold}}, T hot: hot side temperature, T cold: cold side temperature) with respect to the average temperature ( T). While the resistance of TE devices changes as Δ T and/or T change, the current-voltage ( I- V) characteristics have consistently been shown to remain linear, which clips generated electric power ( P gen) within the given open-circuit voltage ( V OC) and short-circuit current ( I SC). This P gen clipping is altered when an appropriate nonlinearity is introduced to the I- V characteristics—increasing P gen. By analogy, photovoltaic cells with a large fill factor exhibit nonlinear I- V characteristics. In this paper, the concept of a unique TE device with nonlinear I- V characteristics is proposed and experimentally demonstrated. A single TE device with nonlinear I- V characteristics is fabricated by combining indium phosphide (InP) and silicon (Si) semiconductor nanowire networks. These TE devices show P gen that is more than 25 times larger than those of comparable devices with linear I- V characteristics. The plausible causes of the nonlinear I- V characteristics are discussed. The demonstrated concept suggests that there exists a new pathway to increase P gen of TE devices made of semiconductors.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

PubMed

Kagan; Mitzi; Dimitrakopoulos

1999-10-29

Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

Wrapped optoelectronic devices and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Curran, Seamus; Dias, Sampath; Alley, Nigel

In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively,more » the optoelectronic devices may be organic light emitting diodes.« less

Network analysis of semiconducting Zn1-xCdxS based photosensitive device using impedance spectroscopy and current-voltage measurement

NASA Astrophysics Data System (ADS)

Datta, Joydeep; Das, Mrinmay; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim

2017-10-01

ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m2 V-1 s-1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.

Semiconducting organic-inorganic nanocomposites by intimately tethering conjugated polymers to inorganic tetrapods

NASA Astrophysics Data System (ADS)

Jung, Jaehan; Yoon, Young Jun; Lin, Zhiqun

2016-04-01

Semiconducting organic-inorganic nanocomposites were judiciously crafted by placing conjugated polymers in intimate contact with inorganic tetrapods via click reaction. CdSe tetrapods were first synthesized by inducing elongated arms from CdSe zincblende seeds through seed-mediated growth. The subsequent effective inorganic ligand treatment, followed by reacting with short bifunctional ligands, yielded azide-functionalized CdSe tetrapods (i.e., CdSe-N3). Finally, the ethynyl-terminated conjugated polymer poly(3-hexylthiophene) (i.e., P3HT-&z.tbd;) was tethered to CdSe-N3 tetrapods via a catalyst-free alkyne-azide cycloaddition, forming intimate semiconducting P3HT-CdSe tetrapod nanocomposites. Intriguingly, the intimate contact between P3HT and CdSe tetrapod was found to not only render the effective dispersion of CdSe tetrapods in the P3HT matrix, but also facilitate the efficient electronic interaction between these two semiconducting constituents. The successful anchoring of P3HT chains onto CdSe tetrapods was substantiated through Fourier transform infrared spectroscopy and nuclear magnetic resonance spectroscopy measurements. Moreover, the absorption and photoluminescence studies further corroborated the intimate tethering between P3HT and CdSe tetrapods. The effect of the type of bifunctional ligands (i.e., aryl vs. aliphatic ligands) and the size of tetrapods on the device performance of hybrid organic-inorganic solar cells was also scrutinized. Interestingly, P3HT-CdSe tetrapod nanocomposites produced via the use of an aryl bifunctional ligand (i.e., 4-azidobenzoic acid) exhibited an improved photovoltaic performance compared to that synthesized with their aliphatic ligand counterpart (i.e., 5-bromovaleric acid). Clearly, the optimal size of CdSe tetrapods ensuring the effective charge transport in conjunction with the good dispersion of CdSe tetrapods rendered an improved device performance. We envision that the click-reaction strategy enabled by

Semiconducting Single-Walled Carbon Nanotubes in Solar Energy Harvesting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blackburn, Jeffrey L.

Semiconducting single-walled carbon nanotubes (s-SWCNTs) represent a tunable model one-dimensional system with exceptional optical and electronic properties. High-throughput separation and purification strategies have enabled the integration of s-SWCNTs into a number of optoelectronic applications, including photovoltaics (PVs). In this Perspective, we discuss the fundamental underpinnings of two model PV interfaces involving s-SWCNTs. We first discuss s-SWCNT-fullerene heterojunctions where exciton dissociation at the donor-acceptor interface drives solar energy conversion. Next, we discuss charge extraction at the interface between s-SWCNTs and a photoexcited perovskite active layer. In each case, the use of highly enriched semiconducting SWCNT samples enables fundamental insights into themore » thermodynamic and kinetic mechanisms that drive the efficient conversion of solar photons into long-lived separated charges. As a result, these model systems help to establish design rules for next-generation PV devices containing well-defined organic semiconductor layers and help to frame a number of important outstanding questions that can guide future studies.« less

Semiconducting Single-Walled Carbon Nanotubes in Solar Energy Harvesting

DOE PAGES

Blackburn, Jeffrey L.

2017-06-14

Semiconducting single-walled carbon nanotubes (s-SWCNTs) represent a tunable model one-dimensional system with exceptional optical and electronic properties. High-throughput separation and purification strategies have enabled the integration of s-SWCNTs into a number of optoelectronic applications, including photovoltaics (PVs). In this Perspective, we discuss the fundamental underpinnings of two model PV interfaces involving s-SWCNTs. We first discuss s-SWCNT-fullerene heterojunctions where exciton dissociation at the donor-acceptor interface drives solar energy conversion. Next, we discuss charge extraction at the interface between s-SWCNTs and a photoexcited perovskite active layer. In each case, the use of highly enriched semiconducting SWCNT samples enables fundamental insights into themore » thermodynamic and kinetic mechanisms that drive the efficient conversion of solar photons into long-lived separated charges. As a result, these model systems help to establish design rules for next-generation PV devices containing well-defined organic semiconductor layers and help to frame a number of important outstanding questions that can guide future studies.« less

PREFACE: Semiconducting oxides Semiconducting oxides

NASA Astrophysics Data System (ADS)

Catlow, Richard; Walsh, Aron

2011-08-01

Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

Precision Controlled Carbon Materials for Next-Generation Optoelectronic and Photonic Devices

DTIC Science & Technology

2018-01-08

absorbers. Semiconducting nanotubes are strong, dye-like absorbers with bandgaps tunable to the ideal for single-junction solar PV ~1.3 eV or deeper...semiconducting carbon nanotube-based photovoltaic solar cells and photodetectors; (2) high-performance carbon nanotube electronics; (3) stretchable...photovoltaic solar cells and photodetectors Semiconducting carbon nanotubes are attractive absorbers for photovoltaic and photodetector devices. The

Low-temperature performance of semiconducting asymmetric nanochannel diodes

NASA Astrophysics Data System (ADS)

Akbas, Y.; Savich, G. R.; Jukna, A.; Plecenik, T.; Ďurina, P.; Plecenik, A.; Wicks, G. W.; Sobolewski, Roman

2017-10-01

We present our studies on fabrication and electrical and optical characterization of semiconducting asymmetric nanochannel diodes (ANCDs), focusing mainly on the temperature dependence of their current-voltage (I-V) characteristics in the range from room temperature to 77 K. These measurements enable us to elucidate the electron transport mechanism in a nanochannel. Our test devices were fabricated in a GaAs/AlGaAs heterostructure with a two-dimensional electron gas layer and were patterned using electron-beam lithography. The 250-nm-wide, 70-nm-deep trenches that define the nanochannel were ion-beam etched using the photoresist as a mask, so the resulting nanostructure consisted of approximately ten ANCDs connected in parallel with 2-µm-long, 230-nm-wide nanochannels. The ANCD I-V curves collected in the dark exhibited nonlinear, diode-type behavior at all tested temperatures. Their forward-biased regions were fitted to the classical diode equation with a thermionic barrier, with the ideality factor n and the saturation current as fitting parameters. We have obtained very good fits, but with n as large as ˜50, suggesting that there must be a substantial voltage drop likely at the contact pads. The thermionic energy barrier was determined to be 56 meV at high temperatures. We have also observed that under optical illumination our ANCDs at low temperatures exhibited, at low illumination powers, a very strong photoresponse enhancement that exceeded that at room temperature. At 78 K, the responsivity was of the order of 104 A/W at the nW-level light excitation.

Nonlinear effects in the time measurement device based on surface acoustic wave filter excitation.

PubMed

Prochazka, Ivan; Panek, Petr

2009-07-01

A transversal surface acoustic wave filter has been used as a time interpolator in a time interval measurement device. We are presenting the experiments and results of an analysis of the nonlinear effects in such a time interpolator. The analysis shows that the nonlinear distortion in the time interpolator circuits causes a deterministic measurement error which can be understood as the time interpolation nonlinearity. The dependence of this error on time of the measured events can be expressed as a sparse Fourier series thus it usually oscillates very quickly in comparison to the clock period. The theoretical model is in good agreement with experiments carried out on an experimental two-channel timing system. Using highly linear amplifiers in the time interpolator and adjusting the filter excitation level to the optimum, we have achieved the interpolation nonlinearity below 0.2 ps. The overall single-shot precision of the experimental timing device is 0.9 ps rms in each channel.

Nonlinear optimization-based device-free localization with outlier link rejection.

PubMed

Xiao, Wendong; Song, Biao; Yu, Xiting; Chen, Peiyuan

2015-04-07

Device-free localization (DFL) is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS) measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR) for RSS-based DFL. It consists of three key strategies, including: (1) affected link identification by differential RSS detection; (2) outlier link rejection via geometrical positional relationship among links; (3) target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI) approach.

Nonlinear time dependence of dark current in charge-coupled devices

NASA Astrophysics Data System (ADS)

Dunlap, Justin C.; Bodegom, Erik; Widenhorn, Ralf

2011-03-01

It is generally assumed that charge-coupled device (CCD) imagers produce a linear response of dark current versus exposure time except near saturation. We found a large number of pixels with nonlinear dark current response to exposure time to be present in two scientific CCD imagers. These pixels are found to exhibit distinguishable behavior with other analogous pixels and therefore can be characterized in groupings. Data from two Kodak CCD sensors are presented for exposure times from a few seconds up to two hours. Linear behavior is traditionally taken for granted when carrying out dark current correction and as a result, pixels with nonlinear behavior will be corrected inaccurately.

Optical Nonlinearities in Semiconductors for Limiting.

NASA Astrophysics Data System (ADS)

Wu, Yuan-Yen

I have conducted detailed experimental and theoretical studies of the nonlinear optical properties of semiconductor materials useful for optical limiting. I have constructed optical limiters utilizing two-photon absorption along with photogenerated carrier defocusing as well as the bound electronic nonlinearity using the semiconducting material ZnSe. I have optimized the focusing geometry to achieve a large dynamic range while maintaining a low limiting energy for the device. The ZnSe monolithic optical limiter has achieved a limiting energy as low as 13 nJ (corresponding to 300W peak power) and a dynamic range as large as 10 ^5 at 532 nm using psec pulses. Theoretical analysis showed that the ZnSe device has a broad-band response covering the wavelength range from 550 nm to 800 nm. Moreover, I found that existing theoretical models (e.g. the Auston model and the band-resonant model using Boltzmann statistics) adequately describe the photo-generated carriers refractive nonlinearity in ZnSe. Material nonlinear optical parameters, such as the two-photon absorption coefficient beta _2 = 5.5 cm/GW, the refraction per unit carrier density sigma_{rm n} = -0.8cdot 10^ {-21}cm^3 and the bound electronic refraction n_2 = -4cdot 10^{ -11}esu, have been measured via time-integrated beam distortion experiments in the near field. A numerical code has been written to simulate the beam distortion in order to extract the previously mentioned material parameters. In addition, I have performed time-resolved distortion measurements that provide an intuitive picture of the carrier generation process via two-photon absorption. I also characterized the optical nonlinearities in a ZnSe Fabry-Perot thin film structure (an interference filter). I concluded that the nonlinear absorption alone in the thin film is insufficient to build an effective optical limiter, as it did not show a net change in refraction using psec pulses. An innovative numerical program was developed to simulate the

Nonlinear piezoelectric devices for broadband air-flow energy harvesting

NASA Astrophysics Data System (ADS)

Bai, Y.; Havránek, Z.; Tofel, P.; Meggs, C.; Hughes, H.; Button, T. W.

2015-11-01

This paper presents preliminary work on an investigation of a nonlinear air-flow energy harvester integrating magnets and a piezoelectric cantilever array. Two individual piezoelectric cantilevers with the structure of free-standing multi-layer thick-films have been fabricated and assembled with a free-spinning fan. The cantilevers were attached with different tip masses thereby achieving separated resonant frequencies. Also, permanent magnets were fixed onto the blades of the fan as well as the tips of the cantilevers, in order to create nonlinear coupling and transfer fluidic movement into mechanical oscillation. The device has been tested in a wind tunnel. Bifurcations in the spectra of the blade rotation speed of the fan as a function of output voltage have been observed, and a bandwidth (blade rotation speed range) widening effect has been achieved.

Fabrication and Characterization of Linear and Nonlinear Photonic Devices in Fused Silica by Femtosecond Laser Writing

NASA Astrophysics Data System (ADS)

Ng, Jason Clement

Femtosecond laser processing is a flexible, three-dimensional (3D) fabrication technique used to make integrated low-loss photonic devices in fused silica. My work expanded the suite of available optical devices through the design and optimization of linear optical components such as low-loss (< 0.5 dB) curved waveguides, directional couplers (DCs), and Mach-Zehnder interferometers (MZIs). The robustness and consistency of this maturing fabrication process was also reinforced through the scalable design and integration of a more complex, multi-component flat-top interleaver over a wide >70-nm spectral window. My work further complemented femtosecond laser processing with the development of nonlinear device capabilities. While thermal poling is a well known process, significant challenges had restricted the development of nonlinear devices in fused silica. The laser writing process would erase the induced nonlinearity (erasing) while a written waveguide core acted as a barrier to the thermal poling process (blocking). Using second harmonic (SH) microscopy, the effectiveness of thermal poling on laser-written waveguides was systematically analyzed leading to the technique of "double poling", which effectively overcomes the two challenges of erasing and blocking. In this new process the substrate is poled before and after waveguide writing to restore the induced nonlinearity within the vicinity of the waveguide to enable effective poling for inducing a second-order nonlinearity (SON) in fused silica. A new flexible, femtosecond laser based erasure process was also developed to enable quasi-phase matching and to form arbitrarily chirped gratings. Following this result, second harmonic generation (SHG) in a quasiphase-matched (QPM) femtosecond laser written waveguide device was demonstrated. SHG in a chirped QPM structure was also demonstrated to illustrate the flexibility of the femtosecond laser writing technique. These are the first demonstration of frequency

Process for separating metallic from semiconducting single-walled carbon nanotubes

NASA Technical Reports Server (NTRS)

Sun, Ya-Ping (Inventor)

2008-01-01

A method for separating semiconducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes is disclosed. The method utilizes separation agents that preferentially associate with semiconducting nanotubes due to the electrical nature of the nanotubes. The separation agents are those that have a planar orientation, .pi.-electrons available for association with the surface of the nanotubes, and also include a soluble portion of the molecule. Following preferential association of the separation agent with the semiconducting nanotubes, the agent/nanotubes complex is soluble and can be solubilized with the solution enriched in semiconducting nanotubes while the residual solid is enriched in metallic nanotubes.

Tunable surface plasmon devices

DOEpatents

Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

2011-08-30

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Hydrothermal process assists undoped and Cr-doped semiconducting ZnO nanorods: Frontier of dielectric property

NASA Astrophysics Data System (ADS)

Debnath, Tanumoy; Saha, Papiya; Patra, Nesla; Das, Sukhen; Sutradhar, Soumyaditya

2018-05-01

The influence of the hydrothermal synthesis route on the grain morphology and thereby the modulation of dielectric response of undoped and Cr3+ ion doped semiconducting ZnO nanoparticles is investigated in this report. The X-ray diffraction study reveals that all the samples are in a polycrystalline single phase of a hexagonal wurtzite structure of ZnO. The field emission scanning electron microscopy study reveals the rod like structure of all the samples. The formation of synthesis route dependent morphology and the morphology dependent physical property of all the samples are the characteristic features of the present work and to date it has not been considered as the specific tool of dielectric property modulation by anyone else. The ultraviolet-visible measurement signifies the superior control over the charge density of the host semiconducting material due to the presence of Cr3+ ions in the structure of ZnO. In the photoluminescence measurement, no significant peak has been observed in the visible region. The frequency and temperature dependent dielectric constants of all the samples were investigated. The consequences of the dielectric measurement suggest that the hydrothermal synthesis route influences the growth mechanism of the semiconducting nanoparticles mostly towards the rod like structure and the doping element influences the charge density, nature of defects, and the defect densities inside the structure of ZnO nanomaterials. All these factors together make the semiconducting ZnO nanomaterials more effective for tailor made applications in magneto-dielectric devices.

Development of high-performing semiconducting polymers for organic electrochemical transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Nielsen, Christian

2016-11-01

The organic electrochemical transistor (OECT), capable of amplifying small electrical signals in an aqueous environment, is an ideal device to utilize in organic bioelectronic applications involving for example neural interfacing and diagnostics. Currently, most OECTs are fabricated with commercially available conducting poly(3,4-ethylenedioxythiophene)-based suspensions such as PEDOT:PSS and are therefore operated in depletion mode giving rise to devices that are permanently on with non-optimal operational voltage. With the aim to develop and utilize efficient accumulation mode OECT devices, we discuss here our recent results regarding the design, synthesis and performance of novel intrinsic semiconducting polymers. Covering key aspects such as ion and charge transport in the bulk semiconductor and operational voltage and stability of the materials and devices, we have elucidated important structure-property relationships. We illustrate the improvements this approach has afforded in the development of high performance accumulation mode OECT materials.

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Nonlinear optical devices: basic elements of a future optical digital computer?

NASA Astrophysics Data System (ADS)

Fischer, R.; Müller, R.

1989-08-01

It is shown that nonlinear optical devices are the most promising elements for an optical digital supercomputer. The basic characteristics of various developed nonlinear elements are presented, including bistable Fabry-Perot etalons, interference filters, self-electrooptic effect devices, quantum-well devices utilizing transitions between the lowest electron states in the conduction band of GaAs, etc.

Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Comfort, Everett; Lee, Ji Ung

2016-06-01

The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

Silicon Photonics: All-Optical Devices for Linear and Nonlinear Applications

NASA Astrophysics Data System (ADS)

Driscoll, Jeffrey B.

Silicon photonics has grown rapidly since the first Si electro-optic switch was demonstrated in 1987, and the field has never grown more quickly than it has over the past decade, fueled by milestone achievements in semiconductor processing technologies for low loss waveguides, high-speed Si modulators, Si lasers, Si detectors, and an enormous toolbox of passive and active integrated devices. Silicon photonics is now on the verge of major commercialization breakthroughs, and optical communication links remain the force driving integrated and Si photonics towards the first commercial telecom and datacom transceivers; however other potential and future applications are becoming uncovered and refined as researchers reveal the benefits of manipulating photons on the nanoscale. This thesis documents an exploration into the unique guided-wave and nonlinear properties of deeply-scaled high-index-contrast sub-wavelength Si waveguides. It is found that the tight confinement inherent to single-mode channel waveguides on the silicon-on-insulator platform lead to a rich physics, which can be leveraged for new devices extending well beyond simple passive interconnects and electro-optic devices. The following chapters will concentrate, in detail, on a number of unique physical features of Si waveguides and extend these attributes towards new and interesting devices. Linear optical properties and nonlinear optical properties are investigated, both of which are strongly affected by tight optical confinement of the guided waveguide modes. As will be shown, tight optical confinement directly results in strongly vectoral modal components, where the electric and magnetic fields of the guided modes extend into all spatial dimensions, even along the axis of propagation. In fact, the longitudinal electric and magnetic field components can be just as strong as the transverse fields, directly affecting the modal group velocity and energy transport properties since the longitudinal fields

Voltage-Controlled Spray Deposition of Multiwalled Carbon Nanotubes on Semiconducting and Insulating Substrates

NASA Astrophysics Data System (ADS)

Maulik, Subhodip; Sarkar, Anirban; Basu, Srismrita; Daniels-Race, Theda

2018-05-01

A facile, cost-effective, voltage-controlled, "single-step" method for spray deposition of surfactant-assisted dispersed carbon nanotube (CNT) thin films on semiconducting and insulating substrates has been developed. The fabrication strategy enables direct deposition and adhesion of CNT films on target samples, eliminating the need for substrate surface functionalization with organosilane binder agents or metal layer coatings. Spray coating experiments on four types of sample [bare silicon (Si), microscopy-grade glass samples, silicon dioxide (SiO2), and polymethyl methacrylate (PMMA)] under optimized control parameters produced films with thickness ranging from 40 nm to 6 μm with substantial surface coverage and packing density. These unique deposition results on both semiconducting and insulator target samples suggest potential applications of this technique in CNT thin-film transistors with different gate dielectrics, bendable electronics, and novel CNT-based sensing devices, and bodes well for further investigation into thin-film coatings of various inorganic, organic, and hybrid nanomaterials on different types of substrate.

Non-linear optical crystal vibration sensing device

DOEpatents

Kalibjian, R.

1994-08-09

A non-linear optical crystal vibration sensing device including a photorefractive crystal and a laser is disclosed. The laser produces a coherent light beam which is split by a beam splitter into a first laser beam and a second laser beam. After passing through the crystal the first laser beam is counter-propagated back upon itself by a retro-mirror, creating a third laser beam. The laser beams are modulated, due to the mixing effect within the crystal by vibration of the crystal. In the third laser beam, modulation is stable and such modulation is converted by a photodetector into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal. 3 figs.

Electronic structure and quantum transport properties of metallic and semiconducting nanowires

NASA Astrophysics Data System (ADS)

Simbeck, Adam J.

The future of the semiconductor industry hinges upon new developments to combat the scaling issues that currently afflict two main chip components: transistors and interconnects. For transistors this means investigating suitable materials to replace silicon for both the insulating gate and the semiconducting channel in order to maintain device performance with decreasing size. For interconnects this equates to overcoming the challenges associated with copper when the wire dimensions approach the confinement limit, as well as continuing to develop low-k dielectric materials that can assure minimal cross-talk between lines. In addition, such challenges make it increasingly clear that device design must move from a top-down to a bottom-up approach in which the desired electronic characteristics are tailored from first-principles. It is with such fundamental hurdles in mind that ab initio calculations on the electronic and quantum transport properties of nanoscale metallic and semiconducting wires have been performed. More specifically, this study seeks to elaborate on the role played by confinement, contacts, dielectric environment, edge decoration, and defects in altering the electronic and transport characteristics of such systems. As experiments continue to achieve better control over the synthesis and design of nanowires, these results are expected to become increasingly more important for not only the interpretation of electronic and transport trends, but also in engineering the electronic structure of nanowires for the needs of the devices of the future. For the metallic atomic wires, the quantum transport properties are first investigated by considering finite, single-atom chains of aluminum, copper, gold, and silver sandwiched between gold contacts. Non-equilibrium Green's function based transport calculations reveal that even in the presence of the contact the conductivity of atomic-scale aluminum is greater than that of the other metals considered. This is

High Efficiency Photovoltaic Devices Fabricated from Self-Assemble Block Insulating-Conducting Copolymer Containing Semiconducting Nanoparticles

DTIC Science & Technology

2005-12-14

71.3° TESDT ɝ° 45.3° 59.5° 67.2° 75.0° The amount of D-A linkers anchored on TiO2 nanoparticles was determined by thermogravimetric analysis ...e.g. lamellae, cylinders and spheres of copolymers were fabricated. Semiconducting nanoparticles of cadmium sulfide ( CdS ) was incorporated into PPP...water contact angle measurement, thermogravimetric analysis , and XPS spectra, we can presume that compact SAMs were formed on the surface of TiO2

Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne

PubMed Central

Zheng, Zhe; Fang, Hehai; Liu, Dan; Tan, Zhenjun; Gao, Xin; Hu, Weida; Peng, Hailin; Tong, Lianming

2017-01-01

Abstract Semiconducting single‐walled carbon nanotubes (s‐SWNTs) are regarded as an important candidate for infrared (IR) optical detection due to their excellent intrinsic properties. However, the strong binding energy of excitons in s‐SWNTs seriously impedes the development of s‐SWNTs IR photodetector. This Communication reports an IR photodetector with highly pure s‐SWNTs and γ‐graphdiyne. The heterojunctions between the two materials can efficiently separate the photogenerated excitons. In comparison to device fabricated only with s‐SWNTs, this IR detector shows a uniform response in the whole channel of the device. The response time is demonstrated to be below 1 ms. The optimal responsivity and detectivity approximately reach 0.4 mA W−1 and 5 × 106 cmHz1/2 W−1, respectively. PMID:29270354

Semiconducting transition metal oxides.

PubMed

Lany, Stephan

2015-07-22

Open shell transition metal oxides are usually described as Mott or charge transfer insulators, which are often viewed as being disparate from semiconductors. Based on the premise that the presence of a correlated gap and semiconductivity are not mutually exclusive, this work reviews electronic structure calculations on the binary 3d oxides, so to distill trends and design principles for semiconducting transition metal oxides. This class of materials possesses the potential for discovery, design, and development of novel functional semiconducting compounds, e.g. for energy applications. In order to place the 3d orbitals and the sp bands into an integrated picture, band structure calculations should treat both contributions on the same footing and, at the same time, account fully for electron correlation in the 3d shell. Fundamentally, this is a rather daunting task for electronic structure calculations, but quasi-particle energy calculations in GW approximation offer a viable approach for band structure predictions in these materials. Compared to conventional semiconductors, the inherent multivalent nature of transition metal cations is more likely to cause undesirable localization of electron or hole carriers. Therefore, a quantitative prediction of the carrier self-trapping energy is essential for the assessing the semiconducting properties and to determine whether the transport mechanism is a band-like large-polaron conduction or a small-polaron hopping conduction. An overview is given for the binary 3d oxides on how the hybridization between the 3d crystal field symmetries with the O-p orbitals of the ligands affects the effective masses and the likelihood of electron and hole self-trapping, identifying those situations where small masses and band-like conduction are more likely to be expected. The review concludes with an illustration of the implications of the increased electronic complexity of transition metal cations on the defect physics and doping, using

High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

2001-01-01

Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

DOEpatents

Wang, Zhong L [Marietta, GA; Xu, Sheng [Atlanta, GA

2011-08-23

An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

Topological quantum pump in serpentine-shaped semiconducting narrow channels

NASA Astrophysics Data System (ADS)

Pandey, Sudhakar; Scopigno, Niccoló; Gentile, Paola; Cuoco, Mario; Ortix, Carmine

2018-06-01

We propose and analyze theoretically a one-dimensional solid-state electronic setup that operates as a topological charge pump in the complete absence of superimposed oscillating local voltages. The system consists of a semiconducting narrow channel with a strong Rashba spin-orbit interaction patterned in a mesoscale serpentine shape. A rotating planar magnetic field serves as the external ac perturbation, and cooperates with the Rashba spin-orbit interaction, which is modulated by the geometric curvature of the electronic channel to realize the topological pumping protocol, originally introduced by Thouless, in a different fashion. We expect the precise pumping of electric charges in our mesoscopic quantum device to be relevant for quantum metrology purposes.

Scattering attributes of one-dimensional semiconducting oxide nanomaterials individually probed for varying light-matter interaction angles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Daniel S.; Singh, Manpreet; Zhou, Hebing

2015-10-12

We report the characteristic optical responses of one-dimensional semiconducting oxide nanomaterials by examining the individual nanorods (NRs) of ZnO, SnO{sub 2}, indium tin oxide, and zinc tin oxide under precisely controlled, light-matter interaction geometry. Scattering signals from a large set of NRs of the different types are evaluated spatially along the NR length while varying the NR tilt angle, incident light polarization, and analyzer rotation. Subsequently, we identify material-indiscriminate, NR tilt angle- and incident polarization-dependent scattering behaviors exhibiting continuous, intermittent, and discrete responses. The insight gained from this study can advance our fundamental understanding of the optical behaviors of themore » technologically useful nanomaterials and, at the same time, promote the development of highly miniaturized, photonic and bio-optical devices utilizing the spatially controllable, optical responses of the individual semiconducting oxide NRs.« less

Orienting semi-conducting π-conjugated polymers.

PubMed

Brinkmann, Martin; Hartmann, Lucia; Biniek, Laure; Tremel, Kim; Kayunkid, Navaphun

2014-01-01

The present review focuses on the recent progress made in thin film orientation of semi-conducting polymers with particular emphasis on methods using epitaxy and shear forces. The main results reported in this review deal with regioregular poly(3-alkylthiophene)s and poly(dialkylfluorenes). Correlations existing between processing conditions, macromolecular parameters and the resulting structures formed in thin films are underlined. It is shown that epitaxial orientation of semi-conducting polymers can generate a large palette of semi-crystalline and nanostructured morphologies by a subtle choice of the orienting substrates and growth conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Non-linear optical crystal vibration sensing device

DOEpatents

Kalibjian, Ralph

1994-01-11

A non-linear optical crystal vibration sensing device (10) including a photorefractive crystal (26) and a laser (12). The laser (12 ) produces a coherent light beam (14) which is split by a beam splitter (18) into a first laser beam (20) and a second laser beam (22). After passing through the crystal (26) the first laser beam (20) is counter-propagated back upon itself by a retro-mirror (32), creating a third laser beam (30). The laser beams (20, 22, 30) are modulated, due to the mixing effect within the crystal (26) by vibration of the crystal (30). In the third laser beam (30), modulation is stable and such modulation is converted by a photodetector (34) into a usable electrical output, intensity modulated in accordance with vibration applied to the crystal (26).

Electrical device fabrication from nanotube formations

DOEpatents

Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

2013-03-12

A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

1999-01-01

Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

PubMed

Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

2017-11-28

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Measurement of charge transport through organic semiconducting devices

NASA Astrophysics Data System (ADS)

Klenkler, Richard A.

2007-12-01

In this thesis, two important and unexplored areas of organic semiconductor device physics are investigated: The first area involves determining the effect of energy barriers and intermixing at the interfaces between hole transport layers (HTLs). This effect was discerned by first establishing a method of pressure-laminating successive solution coated HTLs to gether. It was found that in the range of 0.8--3.0 MPa a pressure-laminated interface between two identical HTLs causes no measurable perturbation to charge transport. By this method, 2 different HTLs can be sandwiched together to create a discrete interface, and by inserting a mixed HTL in the middle an intermixed interface between the 2 HTLs can be simulated. With these sandwiched devices, charge injection across discrete versus intermixed interfaces were compared using time-of-flight measurements. For the hole transport materials investigated, no perturbation to the overall charge transport was observed with the discrete interface, however in contrast the rate of charge transport was clearly reduced through the intermixed interface. The second area that was investigated pertains to the development of a bulk mobility measurement technique that has a higher resolution than existing methods. The approach that was used involved decoupling the charge carrier transient signal from the device charging circuit. With this approach, the RC time constant constraint that limits the resolution of existing methods is eliminated. The resulting method, termed the photoinduced electroluminescence (EL) mobility measurement technique, was then used to compare the electron mobility of the metal chelate, AlQ3 to that of the novel triazine material, BTB. Results showed that BTB demonstrated an order of magnitude higher mobility than AlQ3. Overall, these findings have broad implications regarding device design. The pressure-lamination method could be used, e.g., as a diagnostic tool to help in the design of multilayer xerographic

Spray printing of organic semiconducting single crystals

NASA Astrophysics Data System (ADS)

Rigas, Grigorios-Panagiotis; Payne, Marcia M.; Anthony, John E.; Horton, Peter N.; Castro, Fernando A.; Shkunov, Maxim

2016-11-01

Single-crystal semiconductors have been at the forefront of scientific interest for more than 70 years, serving as the backbone of electronic devices. Inorganic single crystals are typically grown from a melt using time-consuming and energy-intensive processes. Organic semiconductor single crystals, however, can be grown using solution-based methods at room temperature in air, opening up the possibility of large-scale production of inexpensive electronics targeting applications ranging from field-effect transistors and light-emitting diodes to medical X-ray detectors. Here we demonstrate a low-cost, scalable spray-printing process to fabricate high-quality organic single crystals, based on various semiconducting small molecules on virtually any substrate by combining the advantages of antisolvent crystallization and solution shearing. The crystals' size, shape and orientation are controlled by the sheer force generated by the spray droplets' impact onto the antisolvent's surface. This method demonstrates the feasibility of a spray-on single-crystal organic electronics.

Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

NASA Astrophysics Data System (ADS)

Tarsoly, Gergely; Pyo, Seungmoon

2018-06-01

We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

Influence of Oxygen Deficiency on the Rectifying Behavior of Transparent-Semiconducting-Oxide-Metal Interfaces

NASA Astrophysics Data System (ADS)

Schultz, Thorsten; Vogt, Sofie; Schlupp, Peter; von Wenckstern, Holger; Koch, Norbert; Grundmann, Marius

2018-06-01

Transparent semiconducting oxides (TSO) are promising candidates for the fabrication of flexible and low-cost electronic devices, as they contain only abundant materials, are nontoxic, and exhibit high carrier mobilities. The formation of rectifying Schottky-barrier contacts is a prerequisite for devices, such as rectifiers, photodetectors, and metal-semiconductor field-effect transistors, and it was found that the presence of oxygen plays an essential role during the formation of the Schottky contacts. With electrical measurements on Pt/zinc-tin-oxide (ZTO) and PtOx/ZTO Schottky-barrier contacts and depth-resolved x-ray photoelectron spectroscopy measurements we demonstrate the important role of oxygen at the interface between TSOs and the metal contact for the rectifying behavior of diodes. In the vicinity of the interface, PtOx is reduced to Pt in a two-step process. Pt (OH) 4 is reduced within one day, whereas the reduction of PtO takes place over a time period of several weeks. The reduction results in improved rectification compared to Pt /ZTO , due to a filling of oxygen vacancies, which leads to a reduction of the free-carrier concentration in the vicinity of the PtOx/ZTO interface. This increases the depletion layer width and subsequently reduces the tunneling current, resulting in a higher rectification ratio. The time scale of the permanent performance improvement can be shortened significantly by applying a reverse bias to the diode. The described mechanism is most likely also present at other transparent-semiconducting-oxide-metal interfaces.

Template-based preparation of free-standing semiconducting polymeric nanorod arrays on conductive substrates.

PubMed

Haberkorn, Niko; Weber, Stefan A L; Berger, Rüdiger; Theato, Patrick

2010-06-01

We describe the synthesis and characterization of a cross-linkable siloxane-derivatized tetraphenylbenzidine (DTMS-TPD), which was used for the fabrication of semiconducting highly ordered nanorod arrays on conductive indium tin oxide or Pt-coated substrates. The stepwise process allow fabricating of macroscopic areas of well-ordered free-standing nanorod arrays, which feature a high resistance against organic solvents, semiconducting properties and a good adhesion to the substrate. Thin films of the TPD derivate with good hole-conducting properties could be prepared by cross-linking and covalently attaching to hydroxylated substrates utilizing an initiator-free thermal curing at 160 degrees C. The nanorod arrays composed of cross-linked DTMS-TPD were fabricated by an anodic aluminum oxide (AAO) template approach. Furthermore, the nanorod arrays were investigated by a recently introduced method allowing to probe local conductivity on fragile structures. It revealed that more than 98% of the nanorods exhibit electrical conductance and consequently feature a good electrical contact to the substrate. The prepared nanorod arrays have the potential to find application in the fabrication of multilayered device architectures for building well-ordered bulk-heterojunction solar cells.

Nonlinear graphene plasmonics

PubMed Central

2017-01-01

The rapid development of graphene has opened up exciting new fields in graphene plasmonics and nonlinear optics. Graphene's unique two-dimensional band structure provides extraordinary linear and nonlinear optical properties, which have led to extreme optical confinement in graphene plasmonics and ultrahigh nonlinear optical coefficients, respectively. The synergy between graphene's linear and nonlinear optical properties gave rise to nonlinear graphene plasmonics, which greatly augments graphene-based nonlinear device performance beyond a billion-fold. This nascent field of research will eventually find far-reaching revolutionary technological applications that require device miniaturization, low power consumption and a broad range of operating wavelengths approaching the far-infrared, such as optical computing, medical instrumentation and security applications. PMID:29118665

Nonlinear graphene plasmonics

NASA Astrophysics Data System (ADS)

Ooi, Kelvin J. A.; Tan, Dawn T. H.

2017-10-01

The rapid development of graphene has opened up exciting new fields in graphene plasmonics and nonlinear optics. Graphene's unique two-dimensional band structure provides extraordinary linear and nonlinear optical properties, which have led to extreme optical confinement in graphene plasmonics and ultrahigh nonlinear optical coefficients, respectively. The synergy between graphene's linear and nonlinear optical properties gave rise to nonlinear graphene plasmonics, which greatly augments graphene-based nonlinear device performance beyond a billion-fold. This nascent field of research will eventually find far-reaching revolutionary technological applications that require device miniaturization, low power consumption and a broad range of operating wavelengths approaching the far-infrared, such as optical computing, medical instrumentation and security applications.

Time-Domain Full-Wave Modeling of Nonlinear Air Breakdown in High-Power Microwave Devices and Systems

DTIC Science & Technology

2017-09-30

AFRL-RD-PS- AFRL-RD-PS- TR-2017-0047 TR-2017-0047 TIME -DOMAIN FULL-WAVE MODELING OF NONLINEAR AIR BREAKDOWN IN HIGH-POWER MICROWAVE...Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions...TITLE AND SUBTITLE Time -Domain Full-Wave Modeling of Nonlinear Air Breakdown in High-Power Microwave Devices and Systems 5a. CONTRACT NUMBER 5b

Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes

NASA Astrophysics Data System (ADS)

Akbas, Y.; Stern, A.; Zhang, L. Q.; Alimi, Y.; Song, A. M.; Iñiguez-de-la-Torre, I.; Mateos, J.; González, T.; Wicks, G. W.; Sobolewski, Roman

2015-10-01

We present our research on the fabrication and optical characterization of novel semiconducting asymmetric nano-channel diodes (ANCDs). We focus on optical properties of ANCDs and demonstrate that they can be operated as very sensitive, single-photon-level, visible-light photodetectors. Our test devices consisted of 1.2-μm-long, ∼200- to 300-nm-wide channels that were etched in an InGaAs/InAlAs quantum-well hetero structure with a twodimensional electron gas layer. The ANCD I-V curves were collected by measuring the transport current both in the dark and under 800-nm-wavelength, continuous-wave-light laser illumination. In all of our devices, the impact of the light illumination was very clear, and there was a substantial photocurrent, even for incident optical power as low as 1 nW. The magnitude of the optical responsivity in ANCDs with the conducting nano-channel increased linearly with a decrease in optical power over many orders of magnitude, reaching a value of almost 10,000 A/W at 1-nW excitation.

Light emitting ceramic device

DOEpatents

Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2010-05-18

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Synthesis, characterization and design of a nanocrystal based photovoltaic device

NASA Astrophysics Data System (ADS)

Erwin, Mary Margaret

Nanocomposites have shown promise as the active layer for photovoltaic energy conversion. Devices consisting of CdSe nanocrystals and semiconducting polymer, and devices consisting of C60 and semiconducting polymer have been recently investigated. This work will present the rational design, synthesis, fabrication and characterization of a nanocomposite photovoltaic device-containing Poly 3-hexylthiophene (P3HT), Cadmium Selenium (CdSe) nanocrystals, and C60. The use of these three components allows for a dedicated light harvester, CdSe nanocrystals, a dedicated hole transporter, P3HT, and a dedicated electron transporter, C60. Two primary premises were investigated in this work; first what effect the size of the nanocrystal would have on the efficiency of the devices and second would the addition of C 60 to a CdSe nanocrystal/semiconducting polymer device increase the efficiency of the devices. Three sizes of CdSe nanocrystals (30A, 45A, and 72A) were used in the photoactive layer. Five different composites were used for the photoactive layer ranging from 20% CdSe or C60 to 80% CdSe or C60 of each size of CdSe nanocrystal, while the percentage of P3HT was held constant at 20%. All of the composites were tested at 514 nm at 5 W/m2 and at the industry standard of AM 1.5 at 1000 W/m2 (1 sun). After all the results were analyzed, it was seen that with the addition of C60 only a small percentage of CdSe nanocrystals would be required to make an efficient device, thus making this device cost effective and with more research a viable new source of photovoltaic energy.

Photon induced non-linear quantized double layer charging in quaternary semiconducting quantum dots.

PubMed

Nair, Vishnu; Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Aslam, M

2018-03-15

Room temperature quantized double layer charging was observed in 2 nm Cu 2 ZnSnS 4 (CZTS) quantum dots. In addition to this we observed a distinct non-linearity in the quantized double layer charging arising from UV light modulation of double layer. UV light irradiation resulted in a 26% increase in the integral capacitance at the semiconductor-dielectric (CZTS-oleylamine) interface of the quantum dot without any change in its core size suggesting that the cause be photocapacitive. The increasing charge separation at the semiconductor-dielectric interface due to highly stable and mobile photogenerated carriers cause larger electrostatic forces between the quantum dot and electrolyte leading to an enhanced double layer. This idea was supported by a decrease in the differential capacitance possible due to an enhanced double layer. Furthermore the UV illumination enhanced double layer gives us an AC excitation dependent differential double layer capacitance which confirms that the charging process is non-linear. This ultimately illustrates the utility of a colloidal quantum dot-electrolyte interface as a non-linear photocapacitor. Copyright © 2017 Elsevier Inc. All rights reserved.

Modified Hyperspheres Algorithm to Trace Homotopy Curves of Nonlinear Circuits Composed by Piecewise Linear Modelled Devices

PubMed Central

Vazquez-Leal, H.; Jimenez-Fernandez, V. M.; Benhammouda, B.; Filobello-Nino, U.; Sarmiento-Reyes, A.; Ramirez-Pinero, A.; Marin-Hernandez, A.; Huerta-Chua, J.

2014-01-01

We present a homotopy continuation method (HCM) for finding multiple operating points of nonlinear circuits composed of devices modelled by using piecewise linear (PWL) representations. We propose an adaptation of the modified spheres path tracking algorithm to trace the homotopy trajectories of PWL circuits. In order to assess the benefits of this proposal, four nonlinear circuits composed of piecewise linear modelled devices are analysed to determine their multiple operating points. The results show that HCM can find multiple solutions within a single homotopy trajectory. Furthermore, we take advantage of the fact that homotopy trajectories are PWL curves meant to replace the multidimensional interpolation and fine tuning stages of the path tracking algorithm with a simple and highly accurate procedure based on the parametric straight line equation. PMID:25184157

Aligned crystalline semiconducting film on a glass substrate and method of making

DOEpatents

Findikoglu, Alp T.

2010-08-24

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

Carbon Based Transistors and Nanoelectronic Devices

NASA Astrophysics Data System (ADS)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

NASA Astrophysics Data System (ADS)

Cao, Qing; Han, Shu-Jen; Tulevski, George S.

2014-09-01

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

Ohmic contacts to semiconducting diamond

NASA Astrophysics Data System (ADS)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Unsymmetrical squaraines for nonlinear optical materials

NASA Technical Reports Server (NTRS)

Marder, Seth R. (Inventor); Chen, Chin-Ti (Inventor); Cheng, Lap-Tak (Inventor)

1996-01-01

Compositions for use in non-linear optical devices. The compositions have first molecular electronic hyperpolarizability (.beta.) either positive or negative in sign and therefore display second order non-linear optical properties when incorporated into non-linear optical devices.

Relative optical absorption of metallic and semiconducting single-walled carbon nanotubes.

PubMed

Huang, Houjin; Kajiura, Hisashi; Maruyama, Ryuichiro; Kadono, Koji; Noda, Kazuhiro

2006-03-16

While it is well-known that tube-tube interaction causes changes (peak red-shift and suppression) in the optical absorption of single-walled carbon nanotubes (SWNTs), we found in this work that, upon bundling, the optical absorption of metallic SWNTs (M11) is less affected compared to their semiconducting counterparts (S11 or S22), resulting in enhanced absorbance ratio of metallic and semiconducting SWNTs (A(M)/A(S)). Annealing of the SWNTs increases this ratio due to the intensified tube-tube interaction. We have also found that the interaction between SWNTs and the surfactant Triton X-405 has a similar effect. The evaluation of SWNT separation by types (metallic or semiconducting) based on the optical absorption should take these effects into account.

A simple predistortion technique for suppression of nonlinear effects in periodic signals generated by nonlinear transducers

NASA Astrophysics Data System (ADS)

Novak, A.; Simon, L.; Lotton, P.

2018-04-01

Mechanical transducers, such as shakers, loudspeakers and compression drivers that are used as excitation devices to excite acoustical or mechanical nonlinear systems under test are imperfect. Due to their nonlinear behaviour, unwanted contributions appear at their output besides the wanted part of the signal. Since these devices are used to study nonlinear systems, it should be required to measure properly the systems under test by overcoming the influence of the nonlinear excitation device. In this paper, a simple method that corrects distorted output signal of the excitation device by means of predistortion of its input signal is presented. A periodic signal is applied to the input of the excitation device and, from analysing the output signal of the device, the input signal is modified in such a way that the undesirable spectral components in the output of the excitation device are cancelled out after few iterations of real-time processing. The experimental results provided on an electrodynamic shaker show that the spectral purity of the generated acceleration output approaches 100 dB after few iterations (1 s). This output signal, applied to the system under test, is thus cleaned from the undesirable components produced by the excitation device; this is an important condition to ensure a correct measurement of the nonlinear system under test.

All-phosphorus flexible devices with non-collinear electrodes: a first principles study.

PubMed

Li, Junjun; Ruan, Lufeng; Wu, Zewen; Zhang, Guiling; Wang, Yin

2018-03-07

With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.

Spin glass in semiconducting KFe 1.05 Ag 0.88 Te 2 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryu, Hyejin; Lei, Hechang; Klobes, B.

2015-05-01

We report discovery of KFe 1.05 Ag 0.88 Te 2 single crystals with semiconducting spin glass ground state. Composition and structure analyses suggest nearly stoichiometric I 4 / mmm space group but allow for the existence of vacancies, absent in long-range semiconducting antiferromagnet KFe 0.85 Ag 1.15 Te 2 . The subtle change in stoichometry in Fe-Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

Direct Proof of a Defect-Modulated Gap Transition in Semiconducting Nanotubes.

PubMed

Senga, Ryosuke; Pichler, Thomas; Yomogida, Yohei; Tanaka, Takeshi; Kataura, Hiromichi; Suenaga, Kazu

2018-06-13

Measurements of optical properties at a nanometer level are of central importance for the characterization of optoelectronic devices. It is, however, difficult to use conventional light-probe measurements to determine the local optical properties from a single quantum object with nanometrical inhomogeneity. Here, we successfully measured the optical gap transitions of an individual semiconducting carbon nanotube with defects by using a monochromated electron source as a probe. The optical conductivity extracted from an electron energy-loss spectrum for a certain type of defect presents a characteristic modification near the lowest excitation peak ( E 11 ), where excitons and nonradiative transitions, as well as phonon-coupled excitations, are strongly involved. Detailed line-shape analysis of the E 11 peak clearly shows different degrees of exciton lifetime shortening and electronic state modification according to the defect type.

Zero Thermal Expansion and Semiconducting Properties in PbTiO3-Bi(Co, Ti)O3 Ferroelectric Solid Solutions.

PubMed

Pan, Zhao; Chen, Jun; Jiang, Xingxing; Lin, Zheshuai; Zhang, Linxing; Fan, Longlong; Rong, Yangchun; Hu, Lei; Liu, Hui; Ren, Yang; Kuang, Xiaojun; Xing, Xianran

2017-03-06

Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Until now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in a semiconducting ferroelectric of 0.6PbTiO 3 -0.4Bi(Co 0.55 Ti 0.45 )O 3-δ . Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied by negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ion (Ti 3+ ) to another (Ti 4+ ). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relatively lower band gap (E g ) value of 1.5 eV, while the ferroelectric property can be well-maintained with large polarization. The first-principles calculations reveal that the drastically narrowed E g is related to the Co-Ti substitution. The present multifunctional material containing ZTE, semiconducting, and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.

Enhancing extracellular electron transfer between Pseudomonas aeruginosa PAO1 and light driven semiconducting birnessite.

PubMed

Ren, Guiping; Sun, Yuan; Ding, Yang; Lu, Anhuai; Li, Yan; Wang, Changqiu; Ding, Hongrui

2018-06-02

In recent years, considerable research effort has explored the interaction between semiconducting minerals and microorganisms, such relationship is a promising way to increase the efficiency of bioelectrochemical systems. Herein, the enhancement of electron transfer between birnessite photoanodes and Pseudomonas aeruginosa PAO1 under visible light was investigated. Under light illumination and positive bias, the light-birnessite-PAO1 electrochemical system generated a photocurrent of 279.57 μA/cm 2 , which is 322% and 170% higher than those in the abiotic control and dead culture, suggesting photoenhanced electrochemical interaction between birnessite and Pseudomonas. The I-t curves presented repeatable responses to light on/off cycles, and multi-conditions analyses indicated that the enhanced photocurrent was attributed to the additional redox species associated with P. aeruginosa PAO1 and with the biofilm on birnessite. Electroconductibility analysis was conducted on the biofilm cellularly by conductive atomic force microscope. Pyocyanin was isolated as the biosynthesized extracellular shuttle and characterized by cyclic voltammetry and surface-enhanced Raman spectroscopy. Rapid bioelectron transfer driven by light was observed. The results suggest new opportunities for designing photo-bioelectronic devices and expanding our understanding of extracellular electron transfer with semiconducting minerals under light in nature environments. Copyright © 2018. Published by Elsevier B.V.

CVD Polymers for Devices and Device Fabrication.

PubMed

Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K

2017-03-01

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analysis of Nonlinear Insertion Loss of Hearing Protection Devices using an Acoustic Test Fixture

DTIC Science & Technology

2015-09-01

USAARL Report No. 2016-05 Analysis of Nonlinear Insertion Loss of Hearing Protection Devices using an Acoustic Test Fixture By Robert Williams1...through circuitry. Talk through circuits use electro- acoustic transducers to pass ambient sounds through the protector. When the circuitry detects...the SPL of the acoustic insult. If the protective capacity is variable, it should be accounted for in the selection of appropriate HPDs. REAT

Zero thermal expansion and semiconducting properties in PbTiO 3 –Bi(Co, Ti)O 3 ferroelectric solid solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Zhao; Chen, Jun; Jiang, Xingxing

Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Up to now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in semiconducting ferroelectric of 0.6PbTiO 3-0.4Bi(Co 0.55Ti 0.45)O 3-δ. Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied bymore » negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ionic (Ti 3+) to another (Ti 4+). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relative lower band-gap (E g) value of 1.5 eV, while ferroelectric property can be well maintained with large polarization. The first-principles calculations reveal that the drastically narrowed E g is related to the Co-Ti substitution. Finally, the present multifunctional material containing ZTE, semiconducting and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.« less

Zero thermal expansion and semiconducting properties in PbTiO 3 –Bi(Co, Ti)O 3 ferroelectric solid solutions

DOE PAGES

Pan, Zhao; Chen, Jun; Jiang, Xingxing; ...

2017-02-16

Zero thermal expansion (ZTE) behavior is rare but important for both fundamental studies and practical applications of functional materials. Up to now, most available ZTE materials are either electrical insulating oxides or conductive metallic compounds. Very few ZTE materials exhibit the semiconductor feature. Here we report a ZTE in semiconducting ferroelectric of 0.6PbTiO 3-0.4Bi(Co 0.55Ti 0.45)O 3-δ. Its unit cell volume exhibits a negligible change over a broad temperature range from room temperature to 500 °C. The ZTE is supposed to be correlated with the spontaneous volume ferroelectronstriction. Intriguingly, the present ZTE material also exhibits the semiconducting characteristic accompanied bymore » negative temperature coefficient of resistance. The mechanism of electric conduction is attributed to the electronic hopping from one ionic (Ti 3+) to another (Ti 4+). The semiconductor nature has also been confirmed by the noticeable visible-light absorption with the relative lower band-gap (E g) value of 1.5 eV, while ferroelectric property can be well maintained with large polarization. The first-principles calculations reveal that the drastically narrowed E g is related to the Co-Ti substitution. Finally, the present multifunctional material containing ZTE, semiconducting and ferroelectric properties is suggested to enable new applications such as the substrate for solar conversion devices.« less

Fabrication and Characterization of Thin Film Ion Implanted Composite Materials for Integrated Nonlinear Optical Devices

NASA Technical Reports Server (NTRS)

Sarkisov, S.; Curley, M.; Williams, E. K.; Wilkosz, A.; Ila, D.; Poker, D. B.; Hensley, D. K.; Smith, C.; Banks, C.; Penn, B.;

High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

NASA Astrophysics Data System (ADS)

Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng; Chen, Cheng; Sun, Yan; Chen, Zhuoyu; Dang, Wenhui; Tan, Congwei; Liu, Yujing; Yin, Jianbo; Zhou, Yubing; Huang, Shaoyun; Xu, H. Q.; Cui, Yi; Hwang, Harold Y.; Liu, Zhongfan; Chen, Yulin; Yan, Binghai; Peng, Hailin

2017-07-01

High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research. However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present. Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of ˜0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of >20,000 cm2 V-1 s-1 is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition and at the LaAlO3-SrTiO3 interface, making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm2 V-1 s-1), large current on/off ratios (>106) and near-ideal subthreshold swing values (˜65 mV dec-1) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

PubMed Central

2016-01-01

The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

From linear mechanics to nonlinear mechanics

NASA Technical Reports Server (NTRS)

Loeb, Julian

1955-01-01

Consideration is given to the techniques used in telecommunication where a nonlinear system (the modulator) results in a linear transposition of a signal. It is then shown that a similar method permits linearization of electromechanical devices or nonlinear mechanical devices. A sweep function plays the same role as the carrier wave in radio-electricity. The linearizations of certain nonlinear functionals are presented.

An alternative approach to charge transport in semiconducting electrodes

NASA Technical Reports Server (NTRS)

Thomchick, J.; Buoncristiani, A. M.

1980-01-01

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Direct identification of metallic and semiconducting single-walled carbon nanotubes in scanning electron microscopy.

PubMed

Li, Jie; He, Yujun; Han, Yimo; Liu, Kai; Wang, Jiaping; Li, Qunqing; Fan, Shoushan; Jiang, Kaili

2012-08-08

Because of their excellent electrical and optical properties, carbon nanotubes have been regarded as extremely promising candidates for high-performance electronic and optoelectronic applications. However, effective and efficient distinction and separation of metallic and semiconducting single-walled carbon nanotubes are always challenges for their practical applications. Here we show that metallic and semiconducting single-walled carbon nanotubes on SiO(2) can have obviously different contrast in scanning electron microscopy due to their conductivity difference and thus can be effectively and efficiently identified. The correlation between conductivity and contrast difference has been confirmed by using voltage-contrast scanning electron microcopy, peak force tunneling atom force microscopy, and field effect transistor testing. This phenomenon can be understood via a proposed mechanism involving the e-beam-induced surface potential of insulators and the conductivity difference between metallic and semiconducting SWCNTs. This method demonstrates great promise to achieve rapid and large-scale distinguishing between metallic and semiconducting single-walled carbon nanotubes, adding a new function to conventional SEM.

Deoxyribonucleic acid (DNA) cladding layers for nonlinear-optic-polymer-based electro-optic devices

NASA Astrophysics Data System (ADS)

Grote, James G.; Ogata, Naoya; Diggs, Darnell E.; Hopkins, Frank K.

2003-07-01

Nonlinear optic (NLO) polymer based electro-optic devices have been achieving world record low half wave voltages and high frequencies over the last 2-3 years. Part of the advancement is through the use of relatively more conductive polymers for the cladding layers. Based on the current materials available for these cladding materials, however, the desired optical and electromagnetic properites are being balanced for materials processability. One does not want the solvent present in one layer to dissovle the one deposited underneath, or be dissolved by the one being deposited on top. Optimized polymer cladding materials, to further enhance device performance, are continuing to be investigated. Thin films of deoxyribonucleic acid (DNA), derived from salmon sperm, show promise in providing both the desired optical and magnetic properties, as well as the desired resistance to various solvents used for NLO polymer device fabrication. Thin films of DNA were deposited on glass and silicon substrates and the film quality, optical and electromagnetic properties and resistance to various solvents were characterized.

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

PubMed Central

2009-01-01

The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

NASA Technical Reports Server (NTRS)

Lehoczky, Sandor L.; Szofran, Frank R.; Su, Ching-Hua; Cobb, Sharon D.; Scripa, Rosalia A.; Sha, Yi-Gao

1999-01-01

This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.

PubMed

Long, Yun-Ze; Yu, Miao; Sun, Bin; Gu, Chang-Zhi; Fan, Zhiyong

2012-06-21

Semiconducting inorganic nanowires (NWs), nanotubes and nanofibers have been extensively explored in recent years as potential building blocks for nanoscale electronics, optoelectronics, chemical/biological/optical sensing, and energy harvesting, storage and conversion, etc. Besides the top-down approaches such as conventional lithography technologies, nanowires are commonly grown by the bottom-up approaches such as solution growth, template-guided synthesis, and vapor-liquid-solid process at a relatively low cost. Superior performance has been demonstrated using nanowires devices. However, most of the nanowire devices are limited to the demonstration of single devices, an initial step toward nanoelectronic circuits, not adequate for production on a large scale at low cost. Controlled and uniform assembly of nanowires with high scalability is still one of the major bottleneck challenges towards the materials and device integration for electronics. In this review, we aim to present recent progress toward nanowire device assembly technologies, including flow-assisted alignment, Langmuir-Blodgett assembly, bubble-blown technique, electric/magnetic- field-directed assembly, contact/roll printing, planar growth, bridging method, and electrospinning, etc. And their applications in high-performance, flexible electronics, sensors, photovoltaics, bioelectronic interfaces and nano-resonators are also presented.

Selective dispersion of high-purity semiconducting carbon nanotubes using indacenodithiophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Ji, Dongseob; Lee, Seung-Hoon; Noh, Yong-Young

2018-01-01

The facile sorting of highly pure semiconducting single-walled carbon nanotubes (s-SWNTs) is still one of the challenging issues for the next-generation wearable electronic devices such as various opto-electric devices and field-effect transistors (FETs). Herein, we demonstrate the selective dispersion of high-purity s-SWNTs using indacenodithiophene-co-benzothiadiazole (IDT-BT), which is a state-of-the-art high-mobility conjugated polymer. By the selective wrapping of the IDT-BT copolymer, SWNTs of chiral indices (6, 5), (7, 5), (7, 6), (8, 4), (9, 4), (8, 6), (8, 7), (10, 5), (9, 7), (10, 6), (11, 1), and (13, 3) are sorted. Finally, the networked s-SWNT film formed by spin-coating is applied as an active layer of FETs that exhibited ambipolar characteristics with an average mobility of 2.28 cm2/V s in the p-channel and 2.10 cm2/V s in the n-channel. The ON/OFF ratios in both p- and n-channels are approximately 105, which supports the high purity separation of s-SWNTs wrapped by IDT-BT.

Semiconducting carbon nanotube network thin-film transistors with enhanced inkjet-printed source and drain contact interfaces

NASA Astrophysics Data System (ADS)

Lee, Yongwoo; Yoon, Jinsu; Choi, Bongsik; Lee, Heesung; Park, Jinhee; Jeon, Minsu; Han, Jungmin; Lee, Jieun; Kim, Yeamin; Kim, Dae Hwan; Kim, Dong Myong; Choi, Sung-Jin

2017-10-01

Carbon nanotubes (CNTs) are emerging materials for semiconducting channels in high-performance thin-film transistor (TFT) technology. However, there are concerns regarding the contact resistance (Rcontact) in CNT-TFTs, which limits the ultimate performance, especially the CNT-TFTs with the inkjet-printed source/drain (S/D) electrodes. Thus, the contact interfaces comprising the overlap between CNTs and metal S/D electrodes play a particularly dominant role in determining the performances and degree of variability in the CNT-TFTs with inkjet-printed S/D electrodes. In this work, the CNT-TFTs with improved device performance are demonstrated to enhance contact interfaces by controlling the CNT density at the network channel and underneath the inkjet-printed S/D electrodes during the formation of a CNT network channel. The origin of the improved device performance was systematically investigated by extracting Rcontact in the CNT-TFTs with the enhanced contact interfaces by depositing a high density of CNTs underneath the S/D electrodes, resulting in a 59% reduction in Rcontact; hence, the key performance metrics were correspondingly improved without sacrificing any other device metrics.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

PubMed

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Semiconducting boron carbide polymers devices for neutron detection

NASA Astrophysics Data System (ADS)

Echeverria, Elena; Pasquale, Frank L.; James, Robinson; Colón Santana, Juan A.; Adenwalla, Shireen; Kelber, Jeffry A.; Dowben, Peter A.

2014-03-01

Boron carbide materials, with aromatic compounds included, prove to be effective materials as solid state neutron detector detectors. The I-V characteristic curves for these heterojunction diodes with silicon show that these modified boron carbides, in the presence of these linking groups such as 1,4-diaminobenzene (DAB) and pyridine, are p-type. Cadmium was used as shield to discriminate between neutron-induced signals and thermal neutrons, and thermal neutron capture is evident, while gamma detection was not realized. Neutron detection signals for these heterojunction diode were observed, a measurable zero bias current noted, even without complete electron-hole collection. This again illustrates that boron carbide devices can be considered a neutron voltaic.

Zinc oxide nanowire networks for macroelectronic devices

NASA Astrophysics Data System (ADS)

Unalan, Husnu Emrah; Zhang, Yan; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J.

2009-04-01

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Doping of Semiconducting Atomic Chains

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Kutler, Paul (Technical Monitor)

1997-01-01

Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Molecular self-assembly approaches for supramolecular electronic and organic electronic devices

NASA Astrophysics Data System (ADS)

Yip, Hin-Lap

Molecular self-assembly represents an efficient bottom-up strategy to generate structurally well-defined aggregates of semiconducting pi-conjugated materials. The capability of tuning the chemical structures, intermolecular interactions and nanostructures through molecular engineering and novel materials processing renders it possible to tailor a large number of unprecedented properties such as charge transport, energy transfer and light harvesting. This approach does not only benefit traditional electronic devices based on bulk materials, but also generate a new research area so called "supramolecular electronics" in which electronic devices are built up with individual supramolecular nanostructures with size in the sub-hundred nanometers range. My work combined molecular self-assembly together with several novel materials processing techniques to control the nucleation and growth of organic semiconducting nanostructures from different type of pi-conjugated materials. By tailoring the interactions between the molecules using hydrogen bonds and pi-pi stacking, semiconducting nanoplatelets and nanowires with tunable sizes can be fabricated in solution. These supramolecular nanostructures were further patterned and aligned on solid substrates through printing and chemical templating methods. The capability to control the different hierarchies of organization on surface provides an important platform to study their structural-induced electronic properties. In addition to using molecular self-assembly to create different organic nanostructures, functional self-assembled monolayer (SAM) formed by spontaneous chemisorption on surfaces was used to tune the interfacial property in organic solar cells. Devices showed dramatically improved performance when appropriate SAMs were applied to optimize the contact property for efficiency charge collection.

Nonlinear silicon photonics

NASA Astrophysics Data System (ADS)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

DOEpatents

Abraham, Marvin M.; Chen, Yok; Kernohan, Robert H.

1981-01-01

This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

Nonlinear optical oscillation dynamics in high-Q lithium niobate microresonators.

PubMed

Sun, Xuan; Liang, Hanxiao; Luo, Rui; Jiang, Wei C; Zhang, Xi-Cheng; Lin, Qiang

2017-06-12

Recent advance of lithium niobate microphotonic devices enables the exploration of intriguing nonlinear optical effects. We show complex nonlinear oscillation dynamics in high-Q lithium niobate microresonators that results from unique competition between the thermo-optic nonlinearity and the photorefractive effect, distinctive to other device systems and mechanisms ever reported. The observed phenomena are well described by our theory. This exploration helps understand the nonlinear optical behavior of high-Q lithium niobate microphotonic devices which would be crucial for future application of on-chip nonlinear lithium niobate photonics.

Intrinsically stretchable and healable semiconducting polymer for organic transistors

NASA Astrophysics Data System (ADS)

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C.; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B.-H.; Bao, Zhenan

2016-11-01

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

Intrinsically stretchable and healable semiconducting polymer for organic transistors.

PubMed

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

2016-11-17

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

Nonlinear Ballistic Transport in an Atomically Thin Material.

PubMed

Boland, Mathias J; Sundararajan, Abhishek; Farrokhi, M Javad; Strachan, Douglas R

2016-01-26

Ultrashort devices that incorporate atomically thin components have the potential to be the smallest electronics. Such extremely scaled atomically thin devices are expected to show ballistic nonlinear behavior that could make them tremendously useful for ultrafast applications. While nonlinear diffusive electron transport has been widely reported, clear evidence for intrinsic nonlinear ballistic transport in the growing array of atomically thin conductors has so far been elusive. Here we report nonlinear electron transport of an ultrashort single-layer graphene channel that shows quantitative agreement with intrinsic ballistic transport. This behavior is shown to be distinctly different than that observed in similarly prepared ultrashort devices consisting, instead, of bilayer graphene channels. These results suggest that the addition of only one extra layer of an atomically thin material can make a significant impact on the nonlinear ballistic behavior of ultrashort devices, which is possibly due to the very different chiral tunneling of their charge carriers. The fact that we observe the nonlinear ballistic response at room temperature, with zero applied magnetic field, in non-ultrahigh vacuum conditions and directly on a readily accessible oxide substrate makes the nanogap technology we utilize of great potential for achieving extremely scaled high-speed atomically thin devices.

Method and apparatus for casting conductive and semi-conductive materials

DOEpatents

Ciszek, T.F.

1984-08-13

A method and apparatus is disclosed for casting conductive and semi-conductive materials. The apparatus includes a plurality of conductive members arranged to define a container-like area having a desired cross-sectional shape. A portion or all of the conductive or semi-conductive material which is to be cast is introduced into the container-like area. A means is provided for inducing the flow of an electrical current in each of the conductive members, which currents act collectively to induce a current flow in the material. The induced current flow through the conductive members is in a direction substantially opposite to the induced current flow in the material so that the material is repelled from the conductive members during the casting process.

Hot spot dynamics in carbon nanotube array devices.

PubMed

Engel, Michael; Steiner, Mathias; Seo, Jung-Woo T; Hersam, Mark C; Avouris, Phaedon

2015-03-11

We report on the dynamics of spatial temperature distributions in aligned semiconducting carbon nanotube array devices with submicrometer channel lengths. By using high-resolution optical microscopy in combination with electrical transport measurements, we observe under steady state bias conditions the emergence of time-variable, local temperature maxima with dimensions below 300 nm, and temperatures above 400 K. On the basis of time domain cross-correlation analysis, we investigate how the intensity fluctuations of the thermal radiation patterns are correlated with the overall device current. The analysis reveals the interdependence of electrical current fluctuations and time-variable hot spot formation that limits the overall device performance and, ultimately, may cause device degradation. The findings have implications for the future development of carbon nanotube-based technologies.

Design of Semiconducting Tetrahedral Mn 1-xZn xO Alloys and Their Application to Solar Water Splitting

DOE PAGES

Peng, Haowei; Ndione, Paul F.; Ginley, David S.; ...

2015-03-18

Transition metal oxides play important roles as contact and electrode materials, but their use as active layers in solar energy conversion requires achieving semiconducting properties akin to those of conventional semiconductors like Si or GaAs. In particular, efficient bipolar carrier transport is a challenge in these materials. Based on the prediction that a tetrahedral polymorph of MnO should have such desirable semiconducting properties, and the possibility to overcome thermodynamic solubility limits by nonequilibrium thin-film growth, we exploit both structure-property and composition-structure relationships to design and realize novel wurtzite-structure Mn 1₋xZn xO alloys. At Zn compositions above x≈0.3, thin films ofmore » these alloys assume the tetrahedral wurtzite structure instead of the octahedral rocksalt structure of MnO, thereby enabling semiconductor properties that are unique among transition metal oxides, i.e., a band gap within the visible spectrum, a band-transport mechanism for both electron and hole carriers, electron doping, and a band lineup suitable for solar hydrogen generation. In conclusion, a proof of principle is provided by initial photo-electrocatalytic device measurements, corroborating, in particular, the predicted favorable hole-transport properties of these alloys.« less

Enhancing Thermoelectric Performance Using Nonlinear Transport Effects

NASA Astrophysics Data System (ADS)

Jiang, Jian-Hua; Imry, Yoseph

2017-06-01

We study nonlinear transport effects on the maximum efficiency and power for both inelastic and elastic thermoelectric generators. The former device refers to phonon-assisted hopping in double quantum dots, while the latter device is represented by elastic tunneling through a single quantum dot. We find that nonlinear thermoelectric transport can lead to enhanced efficiency and power for both types of devices. A comprehensive survey of various quantum-dot energy, temperature, and parasitic heat conduction reveals that the nonlinear transport-induced improvements of the maximum efficiency and power are overall much more significant for inelastic devices than for elastic devices, even for temperature biases as small as Th=1.2 Tc (Th and Tc are the temperatures of the hot and cold reservoirs, respectively). The underlying mechanism is revealed as due to the fact that, unlike the Fermi distribution, the Bose distribution is not bounded when the temperature bias increases. A large flux density of absorbed phonons leads to a great enhancement of the electrical current, output power, and energy efficiency, dominating over the concurrent increase of the parasitic heat current. Our study reveals that nonlinear transport effects can be a useful tool for improving thermoelectric performance.

Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

PubMed Central

Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

2009-01-01

A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors.

PubMed

Chen, Hu; Hurhangee, Michael; Nikolka, Mark; Zhang, Weimin; Kirkus, Mindaugas; Neophytou, Marios; Cryer, Samuel J; Harkin, David; Hayoz, Pascal; Abdi-Jalebi, Mojtaba; McNeill, Christopher R; Sirringhaus, Henning; McCulloch, Iain

2017-09-01

The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm 2 V -1 s -1 in bottom-gate top-contact organic field-effect transistors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Separation of semiconducting and ferromagnetic FeSi2-nanoparticles by magnetic filtering

NASA Astrophysics Data System (ADS)

Aigner, Willi; Niesar, Sabrina; Mehmedovic, Ervin; Opel, Matthias; Wagner, Friedrich E.; Wiggers, Hartmut; Stutzmann, Martin

2013-10-01

We have investigated the potential of solution-processed β-phase iron disilicide (FeSi2) nanoparticles as a novel semiconducting material for photovoltaic applications. Combined ultraviolet-visible absorption and photothermal deflection spectroscopy measurements have revealed a direct band gap of 0.85 eV and, therefore, a particularly high absorption in the near infrared. With the help of Fourier-transform infrared and X-ray photoelectron spectroscopy, we have observed that exposure to air primarily leads to the formation of a silicon oxide rather than iron oxide. Mössbauer measurements have confirmed that the nanoparticles possess a phase purity of more than 99%. To diminish the small fraction of metallic iron impurities, which were detected by superconducting quantum interference device magnetometry and which would act as unwanted Auger recombination centers, we present a novel concept to magnetically separate the FeSi2 nanoparticles (NPs). This process leads to a reduction of more than 95% of the iron impurities.

Semiconductor ferroelectric compositions and their use in photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprisingmore » a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.« less

Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

NASA Astrophysics Data System (ADS)

Katzenmeyer, Aaron Michael

As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

Biomedical Detection via Macro- and Nano-Sensors Fabricated with Metallic and Semiconducting Oxides

PubMed Central

Hahm, Jong-In

2013-01-01

Originally developed as gas sensors, the benefits of metallic and semiconducting oxide materials are now being realized in other areas of sensing, such as chemical, environmental, and biomedical monitoring and detection. Metallic and semiconducting oxides have continuously expanded their roles to date, and have also established their significance in biosensing by utilizing a variety of modes for signal generation and detection mechanism. These sensors are typically based either on their optical, electrochemical, electrical, gravimetric, acoustic, and magnetic properties for signal transduction. This article reviews such biosensors that employ metallic and semiconducting oxides as active sensing elements to detect nucleic acids, proteins, cells, and a variety of important biomarkers, both in thin film and one-dimensional forms. Specific oxide materials (Mx Oy ) examined comprehensively in this article include M = Fe, Cu, Si, Zn, Sn, In. The derivatives of these oxide materials resulting from incorporation of dopants are examined as well. The crystalline structures and unique properties that may be exploited for various biosensing applications are discussed, and recent efforts investigating the feasibility of using these oxide materials in biosensor technology are described. Key biosensor characteristics resulting from reduced dimensionality are overviewed under the motif of planar and one-dimensional sensors. This article also provides insight into current challenges facing biosensor applications for metallic and semiconducting oxides. In addition, future outlook in this particular field as well as different impacts on biology and medicine are addressed. PMID:23627064

Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

2007-01-01

The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

Photochromic, electrochromic, photoelectrochromic and photovoltaic devices

DOEpatents

Kostecki, Robert; McLarnon, Frank R.

2000-01-01

A light activated photoelectrochromic device is formed of a two-component system formed of a photoactive charge carrier generating material and electrochromic material (plus an elecrolyte). Light interacts with a semiconductive material to generate hole-electron charge carriers which cause a redox reaction in the electrochromic material. One device is formed of hydrated nickel oxide as the electrochromic layer and polycrystalline titanium dioxide as the charge generating material. The materials may be formed as discrete layers or mixed together. Because of the direct charge transfer between the layers, a circuit to apply a voltage to drive the electrochromic reaction is not required, although one can be used to enhance the reaction. The hydrated nickel oxide-titanium dioxide materials can also be used to form a photovoltaic device for generating electricity.

Ab initio density functional theory investigation of electronic properties of semiconducting single-walled carbon nanotube bundles

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Behzad, Somayeh; Azadi, Sam

2008-09-01

By using ab initio density functional theory we investigated the structural and electronic properties of semiconducting (7, 0), (8, 0) and (10, 0) carbon nanotube bundles. The energetic and electronic evolutions of nanotubes in the bundling process are also studied. The effects of inter-tube coupling on the electronic dispersions of semiconducting carbon nanotube bundles are demonstrated. Our results show that the inter-tube coupling decreases the energy gap in semiconducting nanotubes. We found that bundles of (7, 0) and (8, 0) carbon nanotubes have metallic feature, while (10, 0) bundle is a semiconductor with an energy gap of 0.22 eV. To clarify our results the band structures of isolated and bundled nanotubes are compared.

Selective nuclear localization of siRNA by metallic versus semiconducting single wall carbon nanotubes in keratinocytes

PubMed Central

Huzil, John Torin; Saliaj, Evi; Ivanova, Marina V; Gharagozloo, Marjan; Loureiro, Maria Jimena; Lamprecht, Constanze; Korinek, Andreas; Chen, Ding Wen; Foldvari, Marianna

2015-01-01

Background: The potential use of carbon nanotubes (CNTs) in gene therapy as delivery systems for nucleic acids has been recently recognized. Here, we describe that metallic versus semiconducting single-wall CNTs can produce significant differences in transfection rate and cellular distribution of siRNA in murine PAM212 keratinocytes. Results/Methodology: The results of cell interaction studies, coupled with supportive computational simulations and ultrastructural studies revealed that the use of metallic single wall CNTs resulted in siRNA delivery into both the cytoplasm and nucleus of keratinocytes, whereas semiconducting CNTs resulted in delivery only to the cytoplasm. Conclusion: Using enriched fractions of metallic or semiconducting CNTs for siRNA complex preparation may provide specific subcellular targeting advantages. PMID:28031892

Remote detection of electronic devices

DOEpatents

Judd, Stephen L [Los Alamos, NM; Fortgang, Clifford M [Los Alamos, NM; Guenther, David C [Los Alamos, NM

2012-09-25

An apparatus and method for detecting solid-state electronic devices are described. Non-linear junction detection techniques are combined with spread-spectrum encoding and cross correlation to increase the range and sensitivity of the non-linear junction detection and to permit the determination of the distances of the detected electronics. Nonlinear elements are detected by transmitting a signal at a chosen frequency and detecting higher harmonic signals that are returned from responding devices.

Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.

PubMed

Xia, Wei; Peter, Christian; Weng, Junhui; Zhang, Jian; Kliem, Herbert; Jiang, Yulong; Zhu, Guodong

2017-04-05

Ferroelectric polymer based devices exhibit great potentials in low-cost and flexible electronics. To meet the requirements of both low voltage operation and low energy consumption, thickness of ferroelectric polymer films is usually required to be less than, for example, 100 nm. However, decrease of film thickness is also accompanied by the degradation of both crystallinity and ferroelectricity and also the increase of current leakage, which surely degrades device performance. Here we report one epitaxy method based on removable poly(tetrafluoroethylene) (PTFE) templates for high-quality fabrication of ordered ferroelectric polymer thin films. Experimental results indicate that such epitaxially grown ferroelectric polymer films exhibit well improved crystallinity, reduced current leakage and good resistance to electrical breakdown, implying their applications in high-performance and low voltage operated ferroelectric devices. On the basis of this removable PTFE template method, we fabricated organic semiconducting/ferroelectric blend resistive films which presented record electrical performance with operation voltage as low as 5 V and ON/OFF ratio up to 10 5 .

Tailoring (bio)chemical activity of semiconducting nanoparticles: critical role of deposition and aggregation.

PubMed

Chernyshova, Irina V; Ponnurangam, Sathish; Somasundaran, Ponisseril

2011-06-22

The impact of deposition and aggregation on (bio)chemical properties of semiconducting nanoparticles (NPs) is perhaps among the least studied aspects of aquatic chemistry of solids. Employing a combination of in situ FTIR and ex situ X-ray photoelectron spectroscopy (XPS) and using the Mn(II) oxygenation on hematite (α-Fe(2)O(3)) and anatase (TiO(2)) NPs as a model catalytic reaction, we discovered that the catalytic and sorption performance of the semiconducting NPs in the dark can be manipulated by depositing them on different supports or mixing them with other NPs. We introduce the electrochemical concept of the catalytic redox activity to explain the findings and to predict the effects of (co)aggregation and deposition on the catalytic and corrosion properties of ferric (hydr)oxides. These results offer new possibilities for rationally tailoring the technological performance of semiconducting metal oxide NPs, provide a new framework for modeling their fate and transport in the environment and living organisms, and can be helpful in discriminating between weakly and strongly adsorbed species in spectra.

Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

PubMed Central

2014-01-01

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

Nanowire structures and electrical devices

DOEpatents

Bezryadin, Alexey; Remeika, Mikas

2010-07-06

The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

Synthesis, structural and semiconducting properties of Ba(Cu1/3 Sb2/3)O3-PbTiO3 solid solutions

NASA Astrophysics Data System (ADS)

Singh, Chandra Bhal; Kumar, Dinesh; Prashant, Verma, Narendra Kumar; Singh, Akhilesh Kumar

2018-05-01

We report the synthesis and properties of a new solid solution 0.05Ba(Cu1/3Sb2/3)O3-0.95PbTiO3 (BCS-PT) which shows the semiconducting properties. In this study, we have designed new perovskite-type (ABO3) solid solution of BCS-PT that have tunable optical band gap. BCS-PT compounds were prepared by conventional solid-state reaction method and their structural, micro-structural and optical properties were analyzed. The calcination temperature for BCS-PT solid solutions has been optimized to obtain a phase pure system. The Reitveld analysis of X-ray data show that all samples crystallize in tetragonal crystal structure with space group P4mm. X-ray investigation revealed that increase in calcination temperature led to increase of lattice parameter `a' while `c' parameter value lowered. The band gap of PbTiO3 is reduced from 3.2 eV to 2.8 eV with BCS doping and with increasing calcination temperature it further reduces to 2.56 eV. The reduced band gap indicated that the compounds are semiconducting and can be used for photovoltaic device applications.

Real-Time Implementation of Nonlinear Processing Functions.

DTIC Science & Technology

1981-08-01

crystal devices and then to use them in a coherent optical data- processing apparatus using halftone masks custom designed at the University oi Southern...California. With the halftone mask technique, we have demonstrated logarithmic nonlinear transformation, allowing us to separate multiplicative images...improved.,_ This device allowed nonlinear functions to be implemented directly wit - out the need for specially made halftone masks. Besides

Influence of electrode width of interdigital transducer on third-order nonlinearity of surface acoustic wave devices on 42°YX-LiTaO3 substrate

NASA Astrophysics Data System (ADS)

Nakagawa, Ryo; Hashimoto, Ken-ya

2018-07-01

In this paper, we discuss the influence of the electrode width of an interdigital transducer on the third-order nonlinearity of surface acoustic wave (SAW) devices. First, an estimation technique of third-order nonlinear signals based on the linear finite element method is proposed, and the variation of nonlinear signal level with electrode width is estimated. Then, several one-port SAW resonators with different electrode widths are fabricated, and measured nonlinear signal levels are compared with simulation. As predicted by the numerical simulation, nonlinear signal levels became large with electrode width. However, harmonics takes a minimum at a certain electrode width. This tendency disagrees with the simulation. The variation of nonlinear coefficients is evaluated by numerical fitting for the measured data using the nonlinear signal simulator proposed by the authors. As the result, it is concluded that the generation mechanism is not limited to the acoustic strain in electrodes.

Extracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methods

NASA Astrophysics Data System (ADS)

Schießl, Stefan P.; Rother, Marcel; Lüttgens, Jan; Zaumseil, Jana

2017-11-01

The field-effect mobility is an important figure of merit for semiconductors such as random networks of single-walled carbon nanotubes (SWNTs). However, owing to their network properties and quantum capacitance, the standard models for field-effect transistors cannot be applied without modifications. Several different methods are used to determine the mobility with often very different results. We fabricated and characterized field-effect transistors with different polymer-sorted, semiconducting SWNT network densities ranging from low (≈6 μm-1) to densely packed quasi-monolayers (≈26 μm-1) with a maximum on-conductance of 0.24 μS μm-1 and compared four different techniques to evaluate the field-effect mobility. We demonstrate the limits and requirements for each method with regard to device layout and carrier accumulation. We find that techniques that take into account the measured capacitance on the active device give the most reliable mobility values. Finally, we compare our experimental results to a random-resistor-network model.

Light emitting ceramic device and method for fabricating the same

DOEpatents

Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2004-11-30

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Piezoelectric monolayers as nonlinear energy harvesters.

PubMed

López-Suárez, Miquel; Pruneda, Miguel; Abadal, Gabriel; Rurali, Riccardo

2014-05-02

We study the dynamics of h-BN monolayers by first performing ab-initio calculations of the deformation potential energy and then solving numerically a Langevine-type equation to explore their use in nonlinear vibration energy harvesting devices. An applied compressive strain is used to drive the system into a nonlinear bistable regime, where quasi-harmonic vibrations are combined with low-frequency swings between the minima of a double-well potential. Due to its intrinsic piezoelectric response, the nonlinear mechanical harvester naturally provides an electrical power that is readily available or can be stored by simply contacting the monolayer at its ends. Engineering the induced nonlinearity, a 20 nm2 device is predicted to harvest an electrical power of up to 0.18 pW for a noisy vibration of 5 pN.

Intrinsically stretchable and healable semiconducting polymer for organic transistors

DOE PAGES

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; ...

2016-11-16

Developing a molecular design paradigm for conjugated polymers applicable to intrinsically stretchable semiconductors is crucial toward the next generation of wearable electronics. Current molecular design rules for high charge carrier mobility semiconducting polymers are unable to render the fabricated devices simultaneously stretchable and mechanically robust. Here in this paper, we present a new design concept to address the above challenge, while maintaining excellent electronic performance. This concept involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain ismore » applied, while retaining its high charge transport ability. As a result, our polymer is able to recover its high mobility performance (>1 cm 2/Vs) even after 100 cycles at 100% applied strain. Furthermore, we observed that the polymer can be efficiently repaired and/or healed with a simple heat and solvent treatment. These improved mechanical properties of our fabricated stretchable semiconductor enabled us to fabricate highly stretchable and high performance wearable organic transistors. This material design concept should illuminate and advance the pathways for future development of fully stretchable and healable skin-inspired wearable electronics.« less

Intrinsically stretchable and healable semiconducting polymer for organic transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng

Developing a molecular design paradigm for conjugated polymers applicable to intrinsically stretchable semiconductors is crucial toward the next generation of wearable electronics. Current molecular design rules for high charge carrier mobility semiconducting polymers are unable to render the fabricated devices simultaneously stretchable and mechanically robust. Here in this paper, we present a new design concept to address the above challenge, while maintaining excellent electronic performance. This concept involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain ismore » applied, while retaining its high charge transport ability. As a result, our polymer is able to recover its high mobility performance (>1 cm 2/Vs) even after 100 cycles at 100% applied strain. Furthermore, we observed that the polymer can be efficiently repaired and/or healed with a simple heat and solvent treatment. These improved mechanical properties of our fabricated stretchable semiconductor enabled us to fabricate highly stretchable and high performance wearable organic transistors. This material design concept should illuminate and advance the pathways for future development of fully stretchable and healable skin-inspired wearable electronics.« less

Nonlinear Hysteretic Torsional Waves

NASA Astrophysics Data System (ADS)

Cabaret, J.; Béquin, P.; Theocharis, G.; Andreev, V.; Gusev, V. E.; Tournat, V.

2015-07-01

We theoretically study and experimentally report the propagation of nonlinear hysteretic torsional pulses in a vertical granular chain made of cm-scale, self-hanged magnetic beads. As predicted by contact mechanics, the torsional coupling between two beads is found to be nonlinear hysteretic. This results in a nonlinear pulse distortion essentially different from the distortion predicted by classical nonlinearities and in a complex dynamic response depending on the history of the wave particle angular velocity. Both are consistent with the predictions of purely hysteretic nonlinear elasticity and the Preisach-Mayergoyz hysteresis model, providing the opportunity to study the phenomenon of nonlinear dynamic hysteresis in the absence of other types of material nonlinearities. The proposed configuration reveals a plethora of interesting phenomena including giant amplitude-dependent attenuation, short-term memory, as well as dispersive properties. Thus, it could find interesting applications in nonlinear wave control devices such as strong amplitude-dependent filters.

Self-Assembly of Semiconducting-Plasmonic Gold Nanoparticles with Enhanced Optical Property for Photoacoustic Imaging and Photothermal Therapy

PubMed Central

Yang, Zhen; Song, Jibin; Dai, Yunlu; Chen, Jingyi; Wang, Feng; Lin, Lisen; Liu, Yijing; Zhang, Fuwu; Yu, Guocan; Zhou, Zijian; Fan, Wenpei; Huang, Wei; Fan, Quli; Chen, Xiaoyuan

2017-01-01

Although various noble metal and semiconducting molecules have been developed as photoacoustic (PA) agents, the use of semiconducting polymer-metal nanoparticle hybrid materials to enhance PA signal has not been explored. A novel semiconducting-plasmonic nanovesicle was fabricated by self-assembly of semiconducting poly(perylene diimide) (PPDI) and poly(ethylene glycol (PEG) tethered gold nanoparticles (Au@PPDI/PEG). A highly localized and strongly enhanced electromagnetic (EM) field is distributed between adjacent gold nanoparticles in the vesicular shell, where the absorbing collapsed PPDI is present. Significantly, the EM field in turn enhances the light absorption efficiency of PPDI, leading to a much greater photothermal effect and a stronger photoacoustic signal compared to PDI nanoparticle or gold nanovesicle alone. The optical property of the hybrid vesicle can be further tailored by controlling the ratio of PPDI and gold nanoparticle as well as the adjustable interparticle distance of gold nanoparticles localized in the vesicular shell. In vivo imaging and therapeutic evaluation demonstrated that the hybrid vesicle is an excellent probe for cancer theranostics. PMID:28740543

Self-Assembly of Semiconducting-Plasmonic Gold Nanoparticles with Enhanced Optical Property for Photoacoustic Imaging and Photothermal Therapy.

PubMed

Yang, Zhen; Song, Jibin; Dai, Yunlu; Chen, Jingyi; Wang, Feng; Lin, Lisen; Liu, Yijing; Zhang, Fuwu; Yu, Guocan; Zhou, Zijian; Fan, Wenpei; Huang, Wei; Fan, Quli; Chen, Xiaoyuan

2017-01-01

Although various noble metal and semiconducting molecules have been developed as photoacoustic (PA) agents, the use of semiconducting polymer-metal nanoparticle hybrid materials to enhance PA signal has not been explored. A novel semiconducting-plasmonic nanovesicle was fabricated by self-assembly of semiconducting poly(perylene diimide) (PPDI) and poly(ethylene glycol (PEG) tethered gold nanoparticles (Au@PPDI/PEG). A highly localized and strongly enhanced electromagnetic (EM) field is distributed between adjacent gold nanoparticles in the vesicular shell, where the absorbing collapsed PPDI is present. Significantly, the EM field in turn enhances the light absorption efficiency of PPDI, leading to a much greater photothermal effect and a stronger photoacoustic signal compared to PDI nanoparticle or gold nanovesicle alone. The optical property of the hybrid vesicle can be further tailored by controlling the ratio of PPDI and gold nanoparticle as well as the adjustable interparticle distance of gold nanoparticles localized in the vesicular shell. In vivo imaging and therapeutic evaluation demonstrated that the hybrid vesicle is an excellent probe for cancer theranostics.

Nonlinear Terahertz Absorption of Graphene Plasmons.

PubMed

Jadidi, Mohammad M; König-Otto, Jacob C; Winnerl, Stephan; Sushkov, Andrei B; Drew, H Dennis; Murphy, Thomas E; Mittendorff, Martin

2016-04-13

Subwavelength graphene structures support localized plasmonic resonances in the terahertz and mid-infrared spectral regimes. The strong field confinement at the resonant frequency is predicted to significantly enhance the light-graphene interaction, which could enable nonlinear optics at low intensity in atomically thin, subwavelength devices. To date, the nonlinear response of graphene plasmons and their energy loss dynamics have not been experimentally studied. We measure and theoretically model the terahertz nonlinear response and energy relaxation dynamics of plasmons in graphene nanoribbons. We employ a terahertz pump-terahertz probe technique at the plasmon frequency and observe a strong saturation of plasmon absorption followed by a 10 ps relaxation time. The observed nonlinearity is enhanced by 2 orders of magnitude compared to unpatterned graphene with no plasmon resonance. We further present a thermal model for the nonlinear plasmonic absorption that supports the experimental results. The model shows that the observed strong linearity is caused by an unexpected red shift of plasmon resonance together with a broadening and weakening of the resonance caused by the transient increase in electron temperature. The model further predicts that even greater resonant enhancement of the nonlinear response can be expected in high-mobility graphene, suggesting that nonlinear graphene plasmonic devices could be promising candidates for nonlinear optical processing.

Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect

NASA Astrophysics Data System (ADS)

Claps, Ricardo; Dimitropoulos, Dimitrios; Raghunathan, Varun; Fathpour, Sasan; Jalali, Bahram; Jusserand, Bernard

2007-02-01

The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors, due to the enhanced absorption of Ge in the telecommunications band. Recent developments in Raman-based nonlinearities for devices based on a silicon-on-insulator platform have shed light on the possibility of using these effects in Si-Ge architectures. Lasing and amplification have been demonstrated using a SiGe alloy structure, and Brillouin/Raman activity from acoustic phonon modes in SiGe superlattices has been predicted. Moreover, new Raman-active branches and inhomogeneously broadened spectra result from optical phonon modes, offering new perspectives for optical device applications. The possibilities for an electrically-pumped Raman laser will be outlined, and the potential for design and development of silicon-based, Tera-Hertz wave emitters and/or receivers.

Empirical Equation Based Chirality (n, m) Assignment of Semiconducting Single Wall Carbon Nanotubes from Resonant Raman Scattering Data

PubMed Central

Arefin, Md Shamsul

2012-01-01

This work presents a technique for the chirality (n, m) assignment of semiconducting single wall carbon nanotubes by solving a set of empirical equations of the tight binding model parameters. The empirical equations of the nearest neighbor hopping parameters, relating the term (2n− m) with the first and second optical transition energies of the semiconducting single wall carbon nanotubes, are also proposed. They provide almost the same level of accuracy for lower and higher diameter nanotubes. An algorithm is presented to determine the chiral index (n, m) of any unknown semiconducting tube by solving these empirical equations using values of radial breathing mode frequency and the first or second optical transition energy from resonant Raman spectroscopy. In this paper, the chirality of 55 semiconducting nanotubes is assigned using the first and second optical transition energies. Unlike the existing methods of chirality assignment, this technique does not require graphical comparison or pattern recognition between existing experimental and theoretical Kataura plot. PMID:28348319

Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion.

PubMed

Araneo, Rodolfo; Falconi, Christian

2013-07-05

Quasi-1D piezoelectric nanostructures may offer unprecedented sensitivity for transducing minuscule input mechanical forces into high output voltages due to both scaling laws and increased piezoelectric coefficients. However, until now both theoretical and experimental studies have suggested that, for a given mechanical force, lateral bending of piezoelectric nanowires results in lower output electric potentials than vertical compression. Here we demonstrate that this result only applies to nanostructures with a constant cross-section. Moreover, though it is commonly believed that the output electric potential of a strained piezo-semiconductive device can only be reduced by the presence of free charges, we show that the output piezopotential of laterally bent tapered nanostructures, with typical doping levels and very small input forces, can be even increased up to two times by free charges.Our analyses confirm that, though not optimal for piezoelectric energy harvesting, lateral bending of tapered nanostructures with typical doping levels can be ideal for transducing tiny input mechanical forces into high and accessible piezopotentials. Our results provide guidelines for designing high-performance piezo-nano-devices for energy harvesting, mechanical sensing, piezotronics, piezo-phototronics, and piezo-controlled chemical reactions, among others.

Testing of next-generation nonlinear calibration based non-uniformity correction techniques using SWIR devices

NASA Astrophysics Data System (ADS)

Lovejoy, McKenna R.; Wickert, Mark A.

2017-05-01

A known problem with infrared imaging devices is their non-uniformity. This non-uniformity is the result of dark current, amplifier mismatch as well as the individual photo response of the detectors. To improve performance, non-uniformity correction (NUC) techniques are applied. Standard calibration techniques use linear, or piecewise linear models to approximate the non-uniform gain and off set characteristics as well as the nonlinear response. Piecewise linear models perform better than the one and two-point models, but in many cases require storing an unmanageable number of correction coefficients. Most nonlinear NUC algorithms use a second order polynomial to improve performance and allow for a minimal number of stored coefficients. However, advances in technology now make higher order polynomial NUC algorithms feasible. This study comprehensively tests higher order polynomial NUC algorithms targeted at short wave infrared (SWIR) imagers. Using data collected from actual SWIR cameras, the nonlinear techniques and corresponding performance metrics are compared with current linear methods including the standard one and two-point algorithms. Machine learning, including principal component analysis, is explored for identifying and replacing bad pixels. The data sets are analyzed and the impact of hardware implementation is discussed. Average floating point results show 30% less non-uniformity, in post-corrected data, when using a third order polynomial correction algorithm rather than a second order algorithm. To maximize overall performance, a trade off analysis on polynomial order and coefficient precision is performed. Comprehensive testing, across multiple data sets, provides next generation model validation and performance benchmarks for higher order polynomial NUC methods.

Direct observation of hole transfer from semiconducting polymer to carbon nanotubes.

PubMed

Lan, Fei; Li, Guangyong

2013-05-08

Carbon nanotubes have been proven to play significant roles in polymer-based solar cells. However, there is intensive debate on whether carbon nanotube behaves as a donor or acceptor in the semiconducting polymer:carbon nanotube composite. In this paper, we report a direct observation via Kelvin probe force microscopy (KPFM) that single walled carbon nanotubes (SWNTs) behave as hole transporting channels in poly(3-hexylthiophene-2,5-diyl) (P3HT)/SWNT heterojunctions. By comparing the surface potential (SP) change of SWNT in dark and under illumination, we observed that electrons are blocked from SWNT while holes are transferred to SWNT. This observation can be well-explained by our proposed band alignment model of P3HT/SWNT heterojunction. The finding is further verified by hole mobility measurement using the space charge limited current (SCLC) method. SCLC results indicate that the existence of small amount of SWNT (wt 0.5%) promotes device hole mobility to around 15-fold, indicating SWNT act as hole transfer channel. Our finding of hole transporting behavior of SWNT in P3HT/SWNT blend will provide a useful guidance for enhancing the performance of polymer solar cells by carbon nanotubes.

pH and Protein Sensing with Functionalized Semiconducting Oxide Nanobelt FETs

NASA Astrophysics Data System (ADS)

Cheng, Yi; Yun, C. S.; Strouse, G. F.; Xiong, P.; Yang, R. S.; Wang, Z. L.

2008-03-01

We report solution pH sensing and selective protein detection with high-performance channel-limited field-effect transistors (FETs) based on single semiconducting oxide (ZnO and SnO2) nanobelts^1. The devices were integrated with PDMS microfluidic channels for analyte delivery and the source/drain contacts were passivated for in-solution sensing. pH sensing experiments were performed on FETs with functionalized and unmodified nanobelts. Functionalization of the nanobelts by APTES was found to greatly improve the pH sensitivity. The change in nanobelt conductance as functions of pH values at different gate voltages and ionic strengths showed high sensitivity and consistency. For the protein detection, we achieved highly selective biotinylation of the nanobelt channel with through APTES linkage. The specific binding of fluorescently-tagged streptavidin to the biotinylated nanobelt was verified by fluorescence microscopy; non-specific binding to the substrate was largely eliminated using PEG-silane passivation. The electrical responses of the biotinylated FETs to the streptavidin binding in PBS buffers of different pH values were systematically measured. The results will be presented and discussed. ^1Y. Cheng et al., Appl. Phys. Lett. 89, 093114 (2006). *Supported by NSF NIRT Grant ECS-0210332.

First-Principles Predictions of Near-Edge X-ray Absorption Fine Structure Spectra of Semiconducting Polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Gregory M.; Patel, Shrayesh N.; Pemmaraju, C. D.

The electronic structure and molecular orientation of semiconducting polymers in thin films determine their ability to transport charge. Methods based on near-edge X-ray absorption fine structure (NEXAFS) spectroscopy can be used to probe both the electronic structure and microstructure of semiconducting polymers in both crystalline and amorphous films. However, it can be challenging to interpret NEXAFS spectra on the basis of experimental data alone, and accurate, predictive calculations are needed to complement experiments. Here, we show that first-principles density functional theory (DFT) can be used to model NEXAFS spectra of semiconducting polymers and to identify the nature of transitions inmore » complicated NEXAFS spectra. Core-level X-ray absorption spectra of a set of semiconducting polymers were calculated using the excited electron and core-hole (XCH) approach based on constrained-occupancy DFT. A comparison of calculations on model oligomers and periodic structures with experimental data revealed the requirements for accurate prediction of NEXAFS spectra of both conjugated homopolymers and donor–acceptor polymers. The NEXAFS spectra predicted by the XCH approach were applied to study molecular orientation in donor–acceptor polymers using experimental spectra and revealed the complexity of using carbon edge spectra in systems with large monomeric units. The XCH approach has sufficient accuracy in predicting experimental NEXAFS spectra of polymers that it should be considered for design and analysis of measurements using soft X-ray techniques, such as resonant soft X-ray scattering and scanning transmission X-ray microscopy.« less

Microscopy of semiconducting materials

NASA Astrophysics Data System (ADS)

Pennycook, S. J.

1991-04-01

The purpose of the trip was to present an invited talk at the 7th Oxford Conference on Microscopy of Semiconducting Materials entitled, High-Resolution Z-Contrast Imaging of Heterostructures and Superlattices, (Oxford, United Kingdom) and to visit VG Microscopes, East Grinstead, for discussions on the progress of the Oak Ridge National Laboratory (ORNL) 300-kV high-resolution scanning transmission electron microscope (STEM), which is currently on order. The traveler also visited three other institutions with 100-kV STEMs that either have or intend to purchase the necessary modifications to provide Z-contrast capability similar to that of the existing ORNL machine. Specifically, Max-Planck Institut fuer Metallforschung (Stuttgart, Germany); Cambridge University, Department of Materials Science and Metallurgy (Cambridge, United Kingdom); and Cavendish Laboratory, Cambridge University (Cambridge, United Kingdom) were visited. In addition, discussions were held with C. Humphreys on the possibility of obtaining joint funding for collaborative research involving electron beam writing and Z-contrast imaging in the Cambridge and Oak Ridge STEMs, respectively.

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

PubMed

Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin

2015-05-27

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Simulation program of nonlinearities applied to telecommunication systems

NASA Technical Reports Server (NTRS)

Thomas, C.

1979-01-01

In any satellite communication system, the problems of distorsion created by nonlinear devices or systems must be considered. The subject of this paper is the use of the Fast Fourier Transform (F.F.T.) in the prediction of the intermodulation performance of amplifiers, mixers, filters. A nonlinear memory-less model is chosen to simulate amplitude and phase nonlinearities of the device in the simulation program written in FORTRAN 4. The experimentally observed nonlinearity parameters of a low noise 3.7-4.2 GHz amplifier are related to the gain and phase coefficients of Fourier Service Series. The measured results are compared with those calculated from the simulation in the cases where the input signal is composed of two, three carriers and noise power density.

Design and verification of a hybrid nonlinear MRE vibration absorber for controllable broadband performance

NASA Astrophysics Data System (ADS)

Sun, S. S.; Yildirim, T.; Wu, Jichu; Yang, J.; Du, H.; Zhang, S. W.; Li, W. H.

2017-09-01

In this work, a hybrid nonlinear magnetorheological elastomer (MRE) vibration absorber has been designed, theoretically investigated and experimentally verified. The proposed nonlinear MRE absorber has the dual advantages of a nonlinear force-displacement relationship and variable stiffness technology; the purpose for coupling these two technologies is to achieve a large broadband vibration absorber with controllable capability. To achieve a nonlinear stiffness in the device, two pairs of magnets move at a rotary angle against each other, and the theoretical nonlinear force-displacement relationship has been theoretically calculated. For the experimental investigation, the effects of base excitation, variable currents applied to the device (i.e. variable stiffness of the MRE) and semi-active control have been conducted to determine the enhanced broadband performance of the designed device. It was observed the device was able to change resonance frequency with the applied current; moreover, the hybrid nonlinear MRE absorber displayed a softening-type nonlinear response with clear discontinuous bifurcations observed. Furthermore, the performance of the device under a semi-active control algorithm displayed the optimal performance in attenuating the vibration from a primary system to the absorber over a large frequency bandwidth from 4 to 12 Hz. By coupling nonlinear stiffness attributes with variable stiffness MRE technology, the performance of a vibration absorber is substantially improved.

Quasi-Phasematched Nonlinear Optics: Materials and Devices

DTIC Science & Technology

2007-04-16

the soliton energy in pump, signal and idler waves as a function of the final wave- vector mismatch in the chirped QPM gratings. We see good agreement...devices including OP-GaAs devices for broadband optical parametric generation (OPG) at mid-infrared wavelengths, bulk PPLN devices for soliton ...Carrasco, and L. Torner,"Engineering of multi-color spatial solitons with chirped-period quasi-phase-matching gratings in optical parametric amplification

High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

PubMed

Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

2017-10-17

Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

Ferromagnetism and semiconducting of boron nanowires

PubMed Central

2012-01-01

More recently, motivated by extensively technical applications of carbon nanostructures, there is a growing interest in exploring novel non-carbon nanostructures. As the nearest neighbor of carbon in the periodic table, boron has exceptional properties of low volatility and high melting point and is stronger than steel, harder than corundum, and lighter than aluminum. Boron nanostructures thus are expected to have broad applications in various circumstances. In this contribution, we have performed a systematical study of the stability and electronic and magnetic properties of boron nanowires using the spin-polarized density functional calculations. Our calculations have revealed that there are six stable configurations of boron nanowires obtained by growing along different base vectors from the unit cell of the bulk α-rhombohedral boron (α-B) and β-rhombohedral boron (β-B). Well known, the boron bulk is usually metallic without magnetism. However, theoretical results about the magnetic and electronic properties showed that, whether for the α-B-based or the β-B-based nanowires, their magnetism is dependent on the growing direction. When the boron nanowires grow along the base vector [001], they exhibit ferromagnetism and have the magnetic moments of 1.98 and 2.62 μB, respectively, for the α-c [001] and β-c [001] directions. Electronically, when the boron nanowire grows along the α-c [001] direction, it shows semiconducting and has the direct bandgap of 0.19 eV. These results showed that boron nanowires possess the unique direction dependence of the magnetic and semiconducting behaviors, which are distinctly different from that of the bulk boron. Therefore, these theoretical findings would bring boron nanowires to have many promising applications that are novel for the boron bulk. PMID:23244063

Wide dynamic range enrichment method of semiconducting single-walled carbon nanotubes with weak field centrifugation

NASA Astrophysics Data System (ADS)

Reis, Wieland G.; Tomović, Željko; Weitz, R. Thomas; Krupke, Ralph; Mikhael, Jules

2017-03-01

The potential of single-walled carbon nanotubes (SWCNTs) to outperform silicon in electronic application was finally enabled through selective separation of semiconducting nanotubes from the as-synthesized statistical mix with polymeric dispersants. Such separation methods provide typically high semiconducting purity samples with narrow diameter distribution, i.e. almost single chiralities. But for a wide range of applications high purity mixtures of small and large diameters are sufficient or even required. Here we proof that weak field centrifugation is a diameter independent method for enrichment of semiconducting nanotubes. We show that the non-selective and strong adsorption of polyarylether dispersants on nanostructured carbon surfaces enables simple separation of diverse raw materials with different SWCNT diameter. In addition and for the first time, we demonstrate that increased temperature enables higher purity separation. Furthermore we show that the mode of action behind this electronic enrichment is strongly connected to both colloidal stability and protonation. By giving simple access to electronically sorted SWCNTs of any diameter, the wide dynamic range of weak field centrifugation can provide economical relevance to SWCNTs.

Half-cell potentials of semiconductive simple binary sulphides in aqueous solution

USGS Publications Warehouse

Sato, M.

1966-01-01

Theoretical consideration of the charge-transfer mechanism operative in cells with an electrode of a semiconductive binary compound leads to the conclusion that the half-cell potential of such a compound is not only a function of ionic activities in the electrolytic solution, but also a function of the activities of the component elements in the compound phase. The most general form of the electrode equation derived for such a compound with a formula MiXj which dissociates into Mj+ and Xi- ions in aqueous solution is. EMiXj = EMiXj0 + R T 2 ij ln [ (sua Mj+)aqi ?? (suaX)jMiXj/ (suaXi-)aqj ?? (suaM)iMiXj],. where. EMiXj0 = 1 2(EM,Mj+0 + EXi-,X). The equation can be modified to other forms. When applied to semiconductive simple binary sulphides, these equations appear to give better descriptions of the observed electrode potentials of such sulphides than any other proposed equations. ?? 1966.

Thiofluorographene-hydrophilic graphene derivative with semiconducting and genosensing properties.

PubMed

Urbanová, Veronika; Holá, Kateřina; Bourlinos, Athanasios B; Čépe, Klára; Ambrosi, Adriano; Loo, Adeline Huiling; Pumera, Martin; Karlický, František; Otyepka, Michal; Zbořil, Radek

2015-04-08

We present the first example of covalent chemistry on fluorographene, enabling the attachment of -SH groups through nucleophilic substitution of fluorine in a polar solvent. The resulting thiographene-like, 2D derivative is hydrophilic with semiconducting properties and bandgap between 1 and 2 eV depending on F/SH ratio. Thiofluorographene is applied in DNA biosensing by electrochemical impedance spectroscopy. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Biotin-Functionalized Semiconducting Polymer in an Organic Field Effect Transistor and Application as a Biosensor

PubMed Central

Kim, Zin-Sig; Lim, Sang Chul; Kim, Seong Hyun; Yang, Yong Suk; Hwang, Do-Hoon

2012-01-01

This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor. The side chains of fluorene were partially biotinylated after the esterification of the biotin with corresponding alcohol-groups at the side chain in F8T2. Their properties as an organic semiconductor were tested using an organic thin film transistor (OTFT) and were found to show typical p-type semiconductor curves. The functionality of this biosensor in the sensing of biologically active molecules such as avidin in comparison with bovine serum albumin (BSA) was established through a selective decrease in the conductivity of the transistor, as measured with a device that was developed by the authors. Changes to the optical properties of this polymer were also measured through the change in the color of the UV-fluorescence before and after a reaction with avidin or BSA. PMID:23112654

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

NASA Astrophysics Data System (ADS)

Ferraro, E.; Fanciulli, M.; De Michielis, M.

2018-06-01

The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ consisting of three electrons arranged in an electrostatically defined double quantum dot deserves special interest in quantum computation applications. Its advantages are in terms of fabrication, control and manipulation in view of implementation of fast single and two-qubit operations through only electrical tuning. The presence of the environmental noise due to nuclear spins and charge traps, in addition to fluctuations in the applied magnetic field and charge fluctuations on the electrostatic gates adopted to confine the electrons, is taken into account including random magnetic field and random coupling terms in the Hamiltonian. The behavior of the return probability as a function of time for initial conditions of interest is presented. Moreover, through an envelope-fitting procedure on the return probabilities, coherence times are extracted when model parameters take values achievable experimentally in semiconducting devices.

Localized electrical fine tuning of passive microwave and radio frequency devices

DOEpatents

Findikoglu, Alp T.

2001-04-10

A method and apparatus for the localized electrical fine tuning of passive multiple element microwave or RF devices in which a nonlinear dielectric material is deposited onto predetermined areas of a substrate containing the device. An appropriate electrically conductive material is deposited over predetermined areas of the nonlinear dielectric and the signal line of the device for providing electrical contact with the nonlinear dielectric. Individual, adjustable bias voltages are applied to the electrically conductive material allowing localized electrical fine tuning of the devices. The method of the present invention can be applied to manufactured devices, or can be incorporated into the design of the devices so that it is applied at the time the devices are manufactured. The invention can be configured to provide localized fine tuning for devices including but not limited to coplanar waveguides, slotline devices, stripline devices, and microstrip devices.

Nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP thin films

NASA Astrophysics Data System (ADS)

Talwatkar, S. S.; Sunatkari, A. L.; Tamgadge, Y. S.; Muley, G. G.

2018-04-01

The nonlinear optical properties of Nd3+-Li+ co-doped ZnS-PVP nanocomposite were studied using a continuous wave (CW) He-Ne laser (λ = 632.8 nm)by z-scan technique. The nonlinear refractive index (n2), absorption coefficient (β) and third order nonlinear susceptibility (χ(3)) of PVP thin films embedded with Nd3+-Li+ co-doped ZnS NPs was found in the order of 10-7 cm2/W, 10-6 cm/W and 10-7 esu respectively. The nonlinearity found increasing with Nd3+-Li+ co-dopant concentration. Based on the results, it is proposed that this material is a new class of luminescent material suitable in optoelectronics devices application, especially in light-emitting devices, electroluminescent devices, display devices, etc.

semiconducting nanostructures: morphology and thermoelectric properties

NASA Astrophysics Data System (ADS)

Culebras, Mario; Torán, Raquel; Gómez, Clara M.; Cantarero, Andrés

2014-08-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1- x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

Semi-conducting single-walled carbon nanotubes are detrimental when compared to metallic single-walled carbon nanotubes for electrochemical applications.

PubMed

Dong, Qi; Nasir, Muhammad Zafir Mohamad; Pumera, Martin

2017-10-18

As-synthetized single walled carbon nanotubes (SWCNTs) contain both metallic and semiconducting nanotubes. For the electronics, it is desirable to separate semiconducting SWCNTs (s-SWCNTs) from the metallic ones as s-SWCNTs provide desirable electronic properties. Here we test whether ultrapure semi-conducting single-walled carbon nanotubes (s-SWCNTs) provide advantageous electrochemical properties over the as prepared SWCNTs which contain a mixture of semiconducting and metallic CNTs. We test them as a transducer platform which enhanced the detection of target analytes (ascorbic acid, dopamine, uric acid) when compared to a bare glassy carbon (GC) electrode. Despite that, the two materials exhibit significantly different electrochemical properties and performances. A mixture of m-SWCNTs and s-SWCNTs demonstrated superior performance over ultrapure s-SWCNTs with greater peak currents and pronounced shift in peak potentials to lower values in cyclic and differential pulse voltammetry for the detection of target analytes. The mixture of m- and s-SWCNTs displayed about a 4 times improved heterogeneous electron transfer rate as compared to bare GC and a 2 times greater heterogeneous electron transfer rate than s-SWCNTs, demonstrating that ultrapure SWCNTs do not provide any major enhancement over the as prepared SWCNTs.

Nonlinearity without superluminality

NASA Astrophysics Data System (ADS)

Kent, Adrian

2005-07-01

Quantum theory is compatible with special relativity. In particular, though measurements on entangled systems are correlated in a way that cannot be reproduced by local hidden variables, they cannot be used for superluminal signaling. As Czachor, Gisin, and Polchinski pointed out, this is not generally true of general nonlinear modifications of the Schrödinger equation. Excluding superluminal signaling has thus been taken to rule out most nonlinear versions of quantum theory. The no-superluminal-signaling constraint has also been used for alternative derivations of the optimal fidelities attainable for imperfect quantum cloning and other operations. These results apply to theories satisfying the rule that their predictions for widely separated and slowly moving entangled systems can be approximated by nonrelativistic equations of motion with respect to a preferred time coordinate. This paper describes a natural way in which this rule might fail to hold. In particular, it is shown that quantum readout devices which display the values of localized pure states need not allow superluminal signaling, provided that the devices display the values of the states of entangled subsystems as defined in a nonstandard, although natural, way. It follows that any locally defined nonlinear evolution of pure states can be made consistent with Minkowski causality.

Rational design of metal-organic electronic devices: A computational perspective

NASA Astrophysics Data System (ADS)

Chilukuri, Bhaskar

Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics

PubMed Central

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; McGuire, Allister F.; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B.-H.; Bao, Zhenan

2017-01-01

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal–oxide–semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m2) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics. PMID:28461459

Biocompatible and totally disintegrable semiconducting polymer for ultrathin and ultralightweight transient electronics.

PubMed

Lei, Ting; Guan, Ming; Liu, Jia; Lin, Hung-Cheng; Pfattner, Raphael; Shaw, Leo; McGuire, Allister F; Huang, Tsung-Ching; Shao, Leilai; Cheng, Kwang-Ting; Tok, Jeffrey B-H; Bao, Zhenan

2017-05-16

Increasing performance demands and shorter use lifetimes of consumer electronics have resulted in the rapid growth of electronic waste. Currently, consumer electronics are typically made with nondecomposable, nonbiocompatible, and sometimes even toxic materials, leading to serious ecological challenges worldwide. Here, we report an example of totally disintegrable and biocompatible semiconducting polymers for thin-film transistors. The polymer consists of reversible imine bonds and building blocks that can be easily decomposed under mild acidic conditions. In addition, an ultrathin (800-nm) biodegradable cellulose substrate with high chemical and thermal stability is developed. Coupled with iron electrodes, we have successfully fabricated fully disintegrable and biocompatible polymer transistors. Furthermore, disintegrable and biocompatible pseudo-complementary metal-oxide-semiconductor (CMOS) flexible circuits are demonstrated. These flexible circuits are ultrathin (<1 μm) and ultralightweight (∼2 g/m 2 ) with low operating voltage (4 V), yielding potential applications of these disintegrable semiconducting polymers in low-cost, biocompatible, and ultralightweight transient electronics.

Nonlinear structured-illumination enhanced temporal focusing multiphoton excitation microscopy with a digital micromirror device.

PubMed

Cheng, Li-Chung; Lien, Chi-Hsiang; Da Sie, Yong; Hu, Yvonne Yuling; Lin, Chun-Yu; Chien, Fan-Ching; Xu, Chris; Dong, Chen Yuan; Chen, Shean-Jen

2014-08-01

In this study, the light diffraction of temporal focusing multiphoton excitation microscopy (TFMPEM) and the excitation patterning of nonlinear structured-illumination microscopy (NSIM) can be simultaneously and accurately implemented via a single high-resolution digital micromirror device. The lateral and axial spatial resolutions of the TFMPEM are remarkably improved through the second-order NSIM and projected structured light, respectively. The experimental results demonstrate that the lateral and axial resolutions are enhanced from 397 nm to 168 nm (2.4-fold) and from 2.33 μm to 1.22 μm (1.9-fold), respectively, in full width at the half maximum. Furthermore, a three-dimensionally rendered image of a cytoskeleton cell featuring ~25 nm microtubules is improved, with other microtubules at a distance near the lateral resolution of 168 nm also able to be distinguished.

Nonlinear structured-illumination enhanced temporal focusing multiphoton excitation microscopy with a digital micromirror device

PubMed Central

Cheng, Li-Chung; Lien, Chi-Hsiang; Da Sie, Yong; Hu, Yvonne Yuling; Lin, Chun-Yu; Chien, Fan-Ching; Xu, Chris; Dong, Chen Yuan; Chen, Shean-Jen

2014-01-01

In this study, the light diffraction of temporal focusing multiphoton excitation microscopy (TFMPEM) and the excitation patterning of nonlinear structured-illumination microscopy (NSIM) can be simultaneously and accurately implemented via a single high-resolution digital micromirror device. The lateral and axial spatial resolutions of the TFMPEM are remarkably improved through the second-order NSIM and projected structured light, respectively. The experimental results demonstrate that the lateral and axial resolutions are enhanced from 397 nm to 168 nm (2.4-fold) and from 2.33 μm to 1.22 μm (1.9-fold), respectively, in full width at the half maximum. Furthermore, a three-dimensionally rendered image of a cytoskeleton cell featuring ~25 nm microtubules is improved, with other microtubules at a distance near the lateral resolution of 168 nm also able to be distinguished. PMID:25136483

Flexible, polymer gated, AC-driven organic electroluminescence devices

NASA Astrophysics Data System (ADS)

Xu, Junwei; Carroll, David L.

2017-08-01

Comparing rigid inorganic layer, polymeric semiconducting gate layer exhibits superior flexibility as well as efficient carrier manipulation in high frequency AC cycles. Mechanism of the carrier manipulation at the gate in forward and reversed bias of AC cycle is studied. The flexible PET-based AC-OEL device with poly[(9,9-bis(3'-((N,N-dimethyl)-Nethylammonium)- propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN-Br) gate shows a stable electroluminescent performance in frequency sweep with a color rendering index (CRI) over 81 at 2800K color temperature.

Flow induced/ refined solution crystallization of a semiconducting polymer

NASA Astrophysics Data System (ADS)

Nguyen, Ngoc A.

Organic photovoltaics, a new generation of solar cells, has gained scientific and economic interests due to the ability of solution-processing and potentially low-cost power production. Though, the low power conversion efficiency of organic/ plastic solar cells is one of the most pertinent challenges that has appealed to research communities from many different fields including materials science and engineering, electrical engineering, chemical engineering, physics and chemistry. This thesis focuses on investigating and controlling the morphology of a semi-conducting, semi-crystalline polymer formed under shear-flow. Molecular structures and processing techniques are critical factors that significantly affect the morphology formation in the plastic solar cells, thus influencing device performance. In this study, flow-induced solution crystallization of poly (3-hexylthiophene) (P3HT) in a poor solvent, 2-ethylnapthalene (2-EN) was utilized to make a paint-like, structural liquid. The polymer crystals observed in this structured paint are micrometers long, nanometers in cross section and have a structure similar to that formed under quiescent conditions. There is pi-pi stacking order along the fibril axis, while polymer chain folding occurs along the fibril width and the order of the side-chain stacking is along fibril height. It was revealed that shear-flow not only induces P3HT crystallization from solution, but also refines and perfects the P3HT crystals. Thus, a general strategy to refine the semiconducting polymer crystals from solution under shear-flow has been developed and employed by simply tuning the processing (shearing) conditions with respect to the dissolution temperature of P3HT in 2-EN. The experimental results demonstrated that shear removes defects and allows more perfect crystals to be formed. There is no glass transition temperature observed in the crystals formed using the flow-induced crystallization indicating a significantly different

Effect of semiconductor polymer backbone structures and side-chain parameters on the facile separation of semiconducting single-walled carbon nanotubes from as-synthesized mixtures

NASA Astrophysics Data System (ADS)

Lee, Dennis T.; Chung, Jong Won; Park, Geonhee; Kim, Yun-Tae; Lee, Chang Young; Cho, Yeonchoo; Yoo, Pil J.; Han, Jae-Hee; Shin, Hyeon-Jin; Kim, Woo-Jae

2018-01-01

Semiconducting single-walled carbon nanotubes (SWNTs) show promise as core materials for next-generation solar cells and nanoelectronic devices. However, most commercial SWNT production methods generate mixtures of metallic SWNTs (m-SWNTs) and semiconducting SWNT (sc-SWNTs). Therefore, sc-SWNTs must be separated from their original mixtures before use. In this study, we investigated a polymer-based, noncovalent sc-SWNT separation approach, which is simple to perform and does not disrupt the electrical properties of the SWNTs, thus improving the performance of the corresponding sc-SWNT-based applications. By systematically investigating the effect that different structural features of the semiconductor polymer have on the separation of sc-SWNTs, we discovered that the length and configuration of the alkyl side chains and the rigidity of the backbone structure exert significant effects on the efficiency of sc-SWNT separation. We also found that electron transfer between the semiconductor polymers and sc-SWNTs is strongly affected by their energy-level alignment, which can be tailored by controlling the donor-acceptor configuration in the polymer backbone structures. Among the polymers investigated, the highly planar P8T2Z-C12 semiconductor polymer showed the best sc-SWNT separation efficiency and unprecedentedly strong electronic interaction with the sc-SWNTs, which is important for improving their performance in applications.

Ultrafast nonlinear optofluidics in selectively liquid-filled photonic crystal fibers.

PubMed

Vieweg, M; Gissibl, T; Pricking, S; Kuhlmey, B T; Wu, D C; Eggleton, B J; Giessen, H

2010-11-22

Selective filling of photonic crystal fibers with different media enables a plethora of possibilities in linear and nonlinear optics. Using two-photon direct-laser writing we demonstrate full flexibility of individual closing of holes and subsequent filling of photonic crystal fibers with highly nonlinear liquids. We experimentally demonstrate solitonic supercontinuum generation over 600 nm bandwidth using a compact femtosecond oscillator as pump source. Encapsulating our fibers at the ends we realize a compact ultrafast nonlinear optofluidic device. Our work is fundamentally important to the field of nonlinear optics as it provides a new platform for investigations of spatio-temporal nonlinear effects and underpins new applications in sensing and communications. Selective filling of different linear and nonlinear liquids, metals, gases, gain media, and liquid crystals into photonic crystal fibers will be the basis of new reconfigurable and versatile optical fiber devices with unprecedented performance. Control over both temporal and spatial dispersion as well as linear and nonlinear coupling will lead to the generation of spatial-temporal solitons, so-called optical bullets.

Ultrafast nonlinear dynamics of thin gold films due to an intrinsic delayed nonlinearity

NASA Astrophysics Data System (ADS)

Bache, Morten; Lavrinenko, Andrei V.

2017-09-01

Using long-range surface plasmon polaritons light can propagate in metal nano-scale waveguides for ultracompact opto-electronic devices. Gold is an important material for plasmonic waveguides, but although its linear optical properties are fairly well understood, the nonlinear response is still under investigation. We consider the propagation of pulses in ultrathin gold strip waveguides, modeled by the nonlinear Schrödinger equation. The nonlinear response of gold is accounted for by the two-temperature model, revealing it as a delayed nonlinearity intrinsic in gold. The consequence is that the measured nonlinearities are strongly dependent on pulse duration. This issue has so far only been addressed phenomenologically, but we provide an accurate estimate of the quantitative connection as well as a phenomenological theory to understand the enhanced nonlinear response as the gold thickness is reduced. In comparison with previous works, the analytical model for the power-loss equation has been improved, and can be applied now to cases with a high laser peak power. We show new fits to experimental data from the literature and provide updated values for the real and imaginary parts of the nonlinear susceptibility of gold for various pulse durations and gold layer thicknesses. Our simulations show that the nonlinear loss is inhibiting efficient nonlinear interaction with low-power laser pulses. We therefore propose to design waveguides suitable for the mid-IR, where the ponderomotive instantaneous nonlinearity can dominate over the delayed hot-electron nonlinearity and provide a suitable plasmonics platform for efficient ultrafast nonlinear optics.

Predictive study of charge transport in disordered semiconducting polymers.

PubMed

Athanasopoulos, Stavros; Kirkpatrick, James; Martínez, Diego; Frost, Jarvist M; Foden, Clare M; Walker, Alison B; Nelson, Jenny

2007-06-01

We present a theoretical study of charge transport in disordered semiconducting polymers that relates the charge mobility to the chemical structure and the physical morphology in a novel multiscale approach. Our studies, focusing on poly(9,9-dioctylfluorene) (PFO), show that the charge mobility is dominated by pathways with the highest interchain charge-transfer rates. We also find that disorder is not always detrimental to charge transport. We find good agreement with experimental time-of-flight mobility data in highly aligned PFO films.

Development of silicon carbide semiconductor devices for high temperature applications

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.

1991-01-01

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

An experimental nonlinear low dynamic stiffness device for shock isolation

NASA Astrophysics Data System (ADS)

Francisco Ledezma-Ramirez, Diego; Ferguson, Neil S.; Brennan, Michael J.; Tang, Bin

2015-07-01

The problem of shock generated vibration is very common in practice and difficult to isolate due to the high levels of excitation involved and its transient nature. If not properly isolated it could lead to large transmitted forces and displacements. Typically, classical shock isolation relies on the use of passive stiffness elements to absorb energy by deformation and some damping mechanism to dissipate residual vibration. The approach of using nonlinear stiffness elements is explored in this paper, focusing in providing an isolation system with low dynamic stiffness. The possibilities of using such a configuration for a shock mount are studied experimentally following previous theoretical models. The model studied considers electromagnets and permanent magnets in order to obtain nonlinear stiffness forces using different voltage configurations. It is found that the stiffness nonlinearities could be advantageous in improving shock isolation in terms of absolute displacement and acceleration response when compared with linear elastic elements.

Photonic Switching Devices Using Light Bullets

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

1999-01-01

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Dual Colorimetric and Fluorescent Authentication Based on Semiconducting Polymer Dots for Anticounterfeiting Applications.

PubMed

Tsai, Wei-Kai; Lai, Yung-Sheng; Tseng, Po-Jung; Liao, Chia-Hsien; Chan, Yang-Hsiang

2017-09-13

Semiconducting polymer dots (Pdots) have recently emerged as a novel type of ultrabright fluorescent probes that can be widely used in analytical sensing and material science. Here, we developed a dual visual reagent based on Pdots for anticounterfeiting applications. We first designed and synthesized two types of photoswitchable Pdots by incorporating photochromic dyes with multicolor semiconducting polymers to modulate their emission intensities and wavelengths. The resulting full-color Pdot assays showed that the colorimetric and fluorescent dual-readout abilities enabled the Pdots to serve as an anticounterfeiting reagent with low background interference. We also doped these Pdots into flexible substrates and prepared these Pdots as inks for pen handwriting as well as inkjet printing. We further applied this reagent in printing paper and checks for high-security anticounterfeiting purposes. We believe that this dual-readout method based on Pdots will create a new avenue for developing new generations of anticounterfeiting technologies.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films.

PubMed

Sun, Ke; Saadi, Fadl H; Lichterman, Michael F; Hale, William G; Wang, Hsin-Ping; Zhou, Xinghao; Plymale, Noah T; Omelchenko, Stefan T; He, Jr-Hau; Papadantonakis, Kimberly M; Brunschwig, Bruce S; Lewis, Nathan S

2015-03-24

Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

NASA Astrophysics Data System (ADS)

Filippi, M.; Kundys, B.; Ranjith, R.; Kundu, Asish K.; Prellier, W.

2008-05-01

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

Organic materials and devices for detecting ionizing radiation

DOEpatents

Doty, F Patrick [Livermore, CA; Chinn, Douglas A [Livermore, CA

2007-03-06

A .pi.-conjugated organic material for detecting ionizing radiation, and particularly for detecting low energy fission neutrons. The .pi.-conjugated materials comprise a class of organic materials whose members are intrinsic semiconducting materials. Included in this class are .pi.-conjugated polymers, polyaromatic hydrocarbon molecules, and quinolates. Because of their high resistivities (.gtoreq.10.sup.9 ohmcm), these .pi.-conjugated organic materials exhibit very low leakage currents. A device for detecting and measuring ionizing radiation can be made by applying an electric field to a layer of the .pi.-conjugated polymer material to measure electron/hole pair formation. A layer of the .pi.-conjugated polymer material can be made by conventional polymer fabrication methods and can be cast into sheets capable of covering large areas. These sheets of polymer radiation detector material can be deposited between flexible electrodes and rolled up to form a radiation detector occupying a small volume but having a large surface area. The semiconducting polymer material can be easily fabricated in layers about 10 .mu.m to 100 .mu.m thick. These thin polymer layers and their associated electrodes can be stacked to form unique multi-layer detector arrangements that occupy small volume.

Innovative energy absorbing devices based on composite tubes

NASA Astrophysics Data System (ADS)

Tiwari, Chandrashekhar

Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

Degradable conjugated polymers for the selective sorting of semiconducting carbon nanotubes

DOEpatents

Gopalan, Padma; Arnold, Michael Scott; Kansiusarulsamy, Catherine Kanimozhi; Brady, Gerald Joseph; Shea, Matthew John

2018-04-10

Conjugated polymers composed of bi-pyridine units linked to 9,9-dialkyl fluorenyl-2,7-diyl units via imine linkages along the polymer backbone are provided. Also provided are semiconducting single-walled carbon nanotubes coated with the conjugated polymers and methods of sorting and separating s-SWCNTs from a sample comprising a mixture of s-SWCNTs and metallic single-walled carbon nanotubes using the conjugated polymers.

Formation and Photodynamic Behavior of Transition Metal Dichalcogenide Nanosheet-Fullerene Inorganic/Organic Nanohybrids on Semiconducting Electrodes.

PubMed

Baek, Jinseok; Umeyama, Tomokazu; Choi, Wookjin; Tsutsui, Yusuke; Yamada, Hiroki; Seki, Shu; Imahori, Hiroshi

2018-02-01

Composite films that consisted of C 60 and well-exfoliated nanosheets of transition metal dichalcogenides (TMDs), such as MoS 2 or WS 2 , with a bulk heterojunction structure were easily fabricated onto a semiconducting SnO 2 electrode via a two-step methodology: self-assembly into their composite aggregates by injection of a poor solvent into a good solvent with the dispersion, and subsequent electrophoretic deposition. Upon photoexcitation, the composites on SnO 2 exhibited enhanced transient conductivity in comparison with single components of TMDs or C 60 , which demonstrates that the bulk heterojunction nanostructure of TMD and C 60 promoted the charge separation (CS). In addition, the decoration of the TMD nanosheets with C 60 hindered the undesirable charge recombination (CR) between an electron in SnO 2 and a hole in the TMD nanosheets. Owing to the accelerated CS and suppressed CR, photoelectrochemical devices based on the MoS 2 -C 60 and WS 2 -C 60 composites achieved remarkably improved incident photon-to-current efficiencies (IPCEs) as compared with the single-component films. Despite more suppressed CR in WS 2 -C 60 than MoS 2 -C 60 , the IPCE value of the device with WS 2 -C 60 was smaller than that with MoS 2 -C 60 owing to its inhomogeneous film structure. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Apparatuses and methods for generating electric fields

DOEpatents

Scott, Jill R; McJunkin, Timothy R; Tremblay, Paul L

2013-08-06

Apparatuses and methods relating to generating an electric field are disclosed. An electric field generator may include a semiconductive material configured in a physical shape substantially different from a shape of an electric field to be generated thereby. The electric field is generated when a voltage drop exists across the semiconductive material. A method for generating an electric field may include applying a voltage to a shaped semiconductive material to generate a complex, substantially nonlinear electric field. The shape of the complex, substantially nonlinear electric field may be configured for directing charged particles to a desired location. Other apparatuses and methods are disclosed.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

DOE PAGES

Sun, Ke; Saadi, Fadl H.; Lichterman, Michael F.; ...

2015-03-11

Reactively sputtered nickel oxide (NiO x) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O 2(g). These NiO x coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Finally, under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiO x films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of watermore » to O 2(g).« less

Nonlinear Optics and Applications

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin A. (Editor); Frazier, Donald O. (Editor)

2007-01-01

Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

Ultraviolet optical absorptions of semiconducting copper phosphate glasses

NASA Technical Reports Server (NTRS)

Bae, Byeong-Soo; Weinberg, Michael C.

1993-01-01

Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

A programmable nonlinear acoustic metamaterial

NASA Astrophysics Data System (ADS)

Yang, Tianzhi; Song, Zhi-Guang; Clerkin, Eoin; Zhang, Ye-Wei; Sun, Jia-He; Su, Yi-Shu; Chen, Li-Qun; Hagedorn, Peter

2017-09-01

Acoustic metamaterials with specifically designed lattices can manipulate acoustic/elastic waves in unprecedented ways. Whereas there are many studies that focus on passive linear lattice, with non-reconfigurable structures. In this letter, we present the design, theory and experimental demonstration of an active nonlinear acoustic metamaterial, the dynamic properties of which can be modified instantaneously with reversibility. By incorporating active and nonlinear elements in a single unit cell, a real-time tunability and switchability of the band gap is achieved. In addition, we demonstrate a dynamic "editing" capability for shaping transmission spectra, which can be used to create the desired band gap and resonance. This feature is impossible to achieve in passive metamaterials. These advantages demonstrate the versatility of the proposed device, paving the way toward smart acoustic devices, such as logic elements, diode and transistor.

Multimodal nonlinear nanophotonics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kivshar, Yuri S.

2017-05-01

Nonlinear nanophotonics is a rapidly developing field of research with many potential applications for the design of nonlinear nanoantennas, light sources, nanolasers, and ultrafast miniature metadevices. A tight confinement of the local electromagnetic fields in resonant photonic nanostructures can boost nonlinear optical effects, thus offering versatile opportunities for the subwavelength control of light. To achieve the desired functionalities, it is essential to gain flexible control over the near- and far-field properties of nanostructures. To engineer nonlinear scattering from resonant nanoscale elements, both modal and multipolar control of the nonlinear response are widely exploited for enhancing the near-field interaction and optimizing the radiation directionality. Motivated by the recent progress of all-dielectric nanophotonics, where the electric and magnetic multipolar contributions may become comparable, here we review the advances in the recently emerged field of multipolar nonlinear nanophotonics, starting from earlier relevant studies of metallic and metal-dielectric structures supporting localized plasmonic resonances to then discussing the latest results for all-dielectric nanostructures driven by Mie-type multipolar resonances and optically induced magnetic response. These recent developments suggest intriguing opportunities for a design of nonlinear subwavelength light sources with reconfigurable radiation characteristics and engineering large effective optical nonlinearities at the nanoscale, which could have important implications for novel nonlinear photonic devices operating beyond the diffraction limit.

Semiconducting carbon nanotube and covalent organic polyhedron-C60 nanohybrids for light harvesting.

PubMed

Lohrman, Jessica; Zhang, Chenxi; Zhang, Wei; Ren, Shenqiang

2012-08-28

We demonstrate noncovalent electrostatic and π-π interactions to assemble semiconducting single wall carbon nanotube (SWCNT)-C(60)@COP nanohybrids. The C(60)@COP light harvesting complexes bind strongly to SWCNTs due to significant π-π-stacking between C(60), the aromatic dicarbazolylacetylene moieties and the nanotube surfaces.

Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors

NASA Astrophysics Data System (ADS)

Wang, Kangpeng; Feng, Yanyan; Chang, Chunxia; Zhan, Jingxin; Wang, Chengwei; Zhao, Quanzhong; Coleman, Jonathan N.; Zhang, Long; Blau, Werner J.; Wang, Jun

2014-08-01

A series of layered molybdenum dichalcogenides, i.e., MoX2 (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX2 dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad wavelength range from the visible to the near infrared. While the dispersions treated with low-speed centrifugation (1500 rpm) have an SA response, and the MoS2 and MoSe2 dispersions after higher speed centrifugation (10 000 rpm) possess two-photon absorption for fs pulses at 1030 nm, which is due to the significant reduction of the average thickness of the nanosheets; hence, the broadening of band gap. In addition, all dispersions show obvious nonlinear self-defocusing for ps pulses at both 1064 nm and 532 nm, resulting from the thermally-induced nonlinear refractive index. The versatile ultrafast nonlinear properties imply a huge potential of the layered MoX2 semiconductors in the development of nanophotonic devices, such as mode-lockers, optical limiters, optical switches, etc.A series of layered molybdenum dichalcogenides, i.e., MoX2 (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX2 dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad

Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells

NASA Astrophysics Data System (ADS)

Dong, W. S.; Zeng, F.; Lu, S. H.; Liu, A.; Li, X. J.; Pan, F.

2015-10-01

Frequency-dependent learning has been achieved using semiconducting polymer/electrolyte composite cells. The cells composed of polymer/electrolyte double layers realized the conventional spike-rate-dependent plasticity (SRDP) learning model. These cells responded to depression upon low-frequency stimulation and to potentiation upon high-frequency stimulation and presented long-term memory. The transition threshold θm from depression to potentiation varied depending on the previous stimulations. A nanostructure resembling a bio-synapse in its transport passages was demonstrated and a random channel model was proposed to describe the ionic kinetics at the polymer/electrolyte interface during and after stimulations with various frequencies, accounting for the observed SRDP.Frequency-dependent learning has been achieved using semiconducting polymer/electrolyte composite cells. The cells composed of polymer/electrolyte double layers realized the conventional spike-rate-dependent plasticity (SRDP) learning model. These cells responded to depression upon low-frequency stimulation and to potentiation upon high-frequency stimulation and presented long-term memory. The transition threshold θm from depression to potentiation varied depending on the previous stimulations. A nanostructure resembling a bio-synapse in its transport passages was demonstrated and a random channel model was proposed to describe the ionic kinetics at the polymer/electrolyte interface during and after stimulations with various frequencies, accounting for the observed SRDP. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02891d

Nonlinear Dynamics of Silicon Nanowire Resonator Considering Nonlocal Effect.

PubMed

Jin, Leisheng; Li, Lijie

2017-12-01

In this work, nonlinear dynamics of silicon nanowire resonator considering nonlocal effect has been investigated. For the first time, dynamical parameters (e.g., resonant frequency, Duffing coefficient, and the damping ratio) that directly influence the nonlinear dynamics of the nanostructure have been derived. Subsequently, by calculating their response with the varied nonlocal coefficient, it is unveiled that the nonlocal effect makes more obvious impacts at the starting range (from zero to a small value), while the impact of nonlocal effect becomes weaker when the nonlocal term reaches to a certain threshold value. Furthermore, to characterize the role played by nonlocal effect in exerting influence on nonlinear behaviors such as bifurcation and chaos (typical phenomena in nonlinear dynamics of nanoscale devices), we have calculated the Lyapunov exponents and bifurcation diagram with and without nonlocal effect, and results shows the nonlocal effect causes the most significant effect as the device is at resonance. This work advances the development of nanowire resonators that are working beyond linear regime.

Skutterudite Compounds For Power Semiconductor Devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander; Vandersande, Jan

1996-01-01

New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.

Respiratory interactions of soil bacteria with (semi)conductive iron-oxide minerals.

PubMed

Kato, Souichiro; Nakamura, Ryuhei; Kai, Fumiyoshi; Watanabe, Kazuya; Hashimoto, Kazuhito

2010-12-01

Pure-culture studies have shown that dissimilatory metal-reducing bacteria are able to utilize iron-oxide nanoparticles as electron conduits for reducing distant terminal acceptors; however, the ecological relevance of such energy metabolism is poorly understood. Here, soil microbial communities were grown in electrochemical cells with acetate as the electron donor and electrodes (poised at 0.2 V versus Ag/AgCl) as the electron acceptors in the presence and absence of iron-oxide nanoparticles, and respiratory current generation and community structures were analysed. Irrespective of the iron-oxide species (hematite, magnetite or ferrihydrite), the supplementation with iron-oxide minerals resulted in large increases (over 30-fold) in current, while only a moderate increase (∼10-fold) was observed in the presence of soluble ferric/ferrous irons. During the current generation, insulative ferrihydrite was transformed into semiconductive goethite. Clone-library analyses of 16S rRNA gene fragments PCR-amplified from the soil microbial communities revealed that iron-oxide supplementation facilitated the occurrence of Geobacter species affiliated with subsurface clades 1 and 2. We suggest that subsurface-clade Geobacter species preferentially thrive in soil by utilizing (semi)conductive iron oxides for their respiration. © 2010 Society for Applied Microbiology and Blackwell Publishing Ltd.

Broadband ultrafast nonlinear absorption and nonlinear refraction of layered molybdenum dichalcogenide semiconductors.

PubMed

Wang, Kangpeng; Feng, Yanyan; Chang, Chunxia; Zhan, Jingxin; Wang, Chengwei; Zhao, Quanzhong; Coleman, Jonathan N; Zhang, Long; Blau, Werner J; Wang, Jun

2014-09-21

A series of layered molybdenum dichalcogenides, i.e., MoX₂ (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refraction of the MoX₂ dispersions, respectively. All the three-layered nanostructures exhibit prominent ultrafast saturable absorption (SA) for both femtosecond (fs) and picosecond (ps) laser pulses over a broad wavelength range from the visible to the near infrared. While the dispersions treated with low-speed centrifugation (1500 rpm) have an SA response, and the MoS₂ and MoSe₂ dispersions after higher speed centrifugation (10,000 rpm) possess two-photon absorption for fs pulses at 1030 nm, which is due to the significant reduction of the average thickness of the nanosheets; hence, the broadening of band gap. In addition, all dispersions show obvious nonlinear self-defocusing for ps pulses at both 1064 nm and 532 nm, resulting from the thermally-induced nonlinear refractive index. The versatile ultrafast nonlinear properties imply a huge potential of the layered MoX2 semiconductors in the development of nanophotonic devices, such as mode-lockers, optical limiters, optical switches, etc.

Influence of electron beam irradiation on nonlinear optical properties of Al doped ZnO thin films for optoelectronic device applications in the cw laser regime

NASA Astrophysics Data System (ADS)

Antony, Albin; Pramodini, S.; Poornesh, P.; Kityk, I. V.; Fedorchuk, A. O.; Sanjeev, Ganesh

2016-12-01

We present the studies on third-order nonlinear optical properties of Al doped ZnO thin films irradiated with electron beam at different dose rate. Al doped ZnO thin films were deposited on a glass substrate by spray pyrolysis deposition technique. The thin films were irradiated using the 8 MeV electron beam from microtron ranging from 1 kG y to 5 kG y. Nonlinear optical studies were carried out by employing the single beam Z-scan technique to determine the sign and magnitude of absorptive and refractive nonlinearities of the irradiated thin films. Continuous wave He-Ne laser operating at 633 nm was used as source of excitation. The open aperture Z-scan measurements indicated the sample displays reverse saturable absorption (RSA) process. The negative sign of the nonlinear refractive index n2 was noted from the closed aperture Z-scan measurements indicates, the films exhibit self-defocusing property due to thermal nonlinearity. The third-order nonlinear optical susceptibility χ(3) varies from 8.17 × 10-5 esu to 1.39 × 10-3 esu with increase in electron beam irradiation. The present study reveals that the irradiation of electron beam leads to significant changes in the third-order optical nonlinearity. Al doped ZnO displays good optical power handling capability with optical clamping of about ∼5 mW. The irradiation study endorses that the Al doped ZnO under investigation is a promising candidate photonic device applications such as all-optical power limiting.

Ballistic and resonant negative photocurrents in semiconducting carbon nanotubes

NASA Astrophysics Data System (ADS)

Karnetzky, Christoph; Sponfeldner, Lukas; Engl, Max; Holleitner, Alexander W.

2017-04-01

Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent amplitude. The charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be explained by an effective population inversion in the optically pumped subbands.

Enhanced Third-Order Optical Nonlinearity Driven by Surface-Plasmon Field Gradients.

PubMed

Kravtsov, Vasily; AlMutairi, Sultan; Ulbricht, Ronald; Kutayiah, A Ryan; Belyanin, Alexey; Raschke, Markus B

2018-05-18

Efficient nonlinear optical frequency mixing in small volumes is key for future on-chip photonic devices. However, the generally low conversion efficiency severely limits miniaturization to nanoscale dimensions. Here we demonstrate that gradient-field effects can provide for an efficient, conventionally dipole-forbidden nonlinear response. We show that a longitudinal nonlinear source current can dominate the third-order optical nonlinearity of the free electron response in gold in the technologically important near-IR frequency range where the nonlinearities due to other mechanisms are particularly small. Using adiabatic nanofocusing to spatially confine the excitation fields, from measurements of the 2ω_{1}-ω_{2} four-wave mixing response as a function of detuning ω_{1}-ω_{2}, we find up to 10^{-5} conversion efficiency with a gradient-field contribution to χ_{Au}^{(3)} of up to 10^{-19}  m^{2}/V^{2}. The results are in good agreement with the theory based on plasma hydrodynamics and underlying electron dynamics. The associated increase in the nonlinear conversion efficiency with a decreasing sample size, which can even overcompensate the volume decrease, offers a new approach for enhanced nonlinear nano-optics. This will enable more efficient nonlinear optical devices and the extension of coherent multidimensional spectroscopies to the nanoscale.

Enhanced Third-Order Optical Nonlinearity Driven by Surface-Plasmon Field Gradients

NASA Astrophysics Data System (ADS)

Kravtsov, Vasily; AlMutairi, Sultan; Ulbricht, Ronald; Kutayiah, A. Ryan; Belyanin, Alexey; Raschke, Markus B.

2018-05-01

Efficient nonlinear optical frequency mixing in small volumes is key for future on-chip photonic devices. However, the generally low conversion efficiency severely limits miniaturization to nanoscale dimensions. Here we demonstrate that gradient-field effects can provide for an efficient, conventionally dipole-forbidden nonlinear response. We show that a longitudinal nonlinear source current can dominate the third-order optical nonlinearity of the free electron response in gold in the technologically important near-IR frequency range where the nonlinearities due to other mechanisms are particularly small. Using adiabatic nanofocusing to spatially confine the excitation fields, from measurements of the 2 ω1-ω2 four-wave mixing response as a function of detuning ω1-ω2, we find up to 10-5 conversion efficiency with a gradient-field contribution to χAu(3 ) of up to 10-19 m2/V2 . The results are in good agreement with the theory based on plasma hydrodynamics and underlying electron dynamics. The associated increase in the nonlinear conversion efficiency with a decreasing sample size, which can even overcompensate the volume decrease, offers a new approach for enhanced nonlinear nano-optics. This will enable more efficient nonlinear optical devices and the extension of coherent multidimensional spectroscopies to the nanoscale.

Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment

NASA Astrophysics Data System (ADS)

Venkateswara, Y.; Gupta, Sachin; Samatham, S. Shanmukharao; Varma, Manoj Raama; Enamullah, Suresh, K. G.; Alam, Aftab

2018-02-01

We report the structural, magnetic, and transport properties of the polycrystalline CrVTiAl alloy along with first-principles calculations. The alloy crystallizes in a LiMgPdSn-type structure with a lattice parameter of 6.14 Å at room temperature. The absence of the (111) peak along with the presence of a weak (200) peak indicates the antisite disorder of Al with Cr and V atoms, which is different from the pure DO3 type. Magnetization measurements reveal a magnetic transition near 710 K, a coercive field of ˜100 Oe at 3 K, and a moment of ˜10-3μB/f .u . These observations are indicative of fully compensated ferrimagnetism in the alloy, which is confirmed by theoretical modeling. The temperature coefficient of resistivity is found to be negative, signaling the semiconducting nature. However, the absence of exponential dependence indicates the semiconducting nature with gapless/spin-gapless behavior. Electronic and magnetic properties of CrVTiAl for all three possible crystallographic configurations are studied theoretically. All the configurations are found to be different forms of semiconductors. The ground-state configuration is a fully compensated ferrimagnet with band gaps of 0.58 and 0.30 eV for the spin-up and -down bands, respectively. The next-higher-energy configuration is also fully compensated ferrimagnetic but has a spin-gapless semiconducting nature. The highest-energy configuration corresponds to a nonmagnetic, gapless semiconductor. The energy differences among these configurations are quite small (<1 mRy /atom ), which hints that, at finite temperatures, the alloy exists in a disordered phase, which is a mixture of the three configurations. By taking into account the theoretical and experimental findings, we conclude that CrVTiAl is a fully compensated ferrimagnet with a predominantly spin-gapless semiconducting nature.

Applied Nonlinear Dynamics and Stochastic Systems Near The Millenium. Proceedings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kadtke, J.B.; Bulsara, A.

These proceedings represent papers presented at the Applied Nonlinear Dynamics and Stochastic Systems conference held in San Diego, California in July 1997. The conference emphasized the applications of nonlinear dynamical systems theory in fields as diverse as neuroscience and biomedical engineering, fluid dynamics, chaos control, nonlinear signal/image processing, stochastic resonance, devices and nonlinear dynamics in socio{minus}economic systems. There were 56 papers presented at the conference and 5 have been abstracted for the Energy Science and Technology database.(AIP)

Nonlinear Metasurface for Simultaneous Control of Spin and Orbital Angular Momentum in Second Harmonic Generation.

PubMed

Li, Guixin; Wu, Lin; Li, King F; Chen, Shumei; Schlickriede, Christian; Xu, Zhengji; Huang, Siya; Li, Wendi; Liu, Yanjun; Pun, Edwin Y B; Zentgraf, Thomas; Cheah, Kok W; Luo, Yu; Zhang, Shuang

2017-12-13

The spin and orbital angular momentum (SAM and OAM) of light is providing a new gateway toward high capacity and robust optical communications. While the generation of light with angular momentum is well studied in linear optics, its further integration into nonlinear optical devices will open new avenues for increasing the capacity of optical communications through additional information channels at new frequencies. However, it has been challenging to manipulate the both SAM and OAM of nonlinear signals in harmonic generation processes with conventional nonlinear materials. Here, we report the generation of spin-controlled OAM of light in harmonic generations by using ultrathin photonic metasurfaces. The spin manipulation of OAM mode of harmonic waves is experimentally verified by using second harmonic generation (SHG) from gold meta-atom with 3-fold rotational symmetry. By introducing nonlinear phase singularity into the metasurface devices, we successfully generate and measure the topological charges of spin-controlled OAM mode of SHG through an on-chip metasurface interferometer. The nonlinear photonic metasurface proposed in this work not only opens new avenues for manipulating the OAM of nonlinear optical signals but also benefits the understanding of the nonlinear spin-orbit interaction of light in nanoscale devices.

PREFACE: 17th International Conference on Microscopy of Semiconducting Materials 2011

NASA Astrophysics Data System (ADS)

Walther, T.; Midgley, P. A.

2011-11-01

This volume contains invited and contributed papers from the 17th international conference on 'Microscopy of Semiconducting Materials' held at Churchill College, University of Cambridge, on 4-7 April 2011. The meeting was organised under the auspices of the Institute of Physics and supported by the Royal Microscopical Society as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and related techniques with high spatial resolution. This time the meeting was attended by 131 delegates from 25 countries world-wide, a record in terms of internationality. As semiconductor devices shrink further new routes of device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, the electronic structure, the chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two examples of topics at this meeting that have attracted a number of interesting studies were: the correlation of microstructural, optical and chemical information at atomic resolution with nanometre-scale resolved maps of the local electrical fields in (In,Al)GaN based semiconductors and tomographic approaches to characterise ensembles of nanowires and stacks of processed layers in devices Figure 1 Figure 1. Opening lecture by Professor Sir Colin J Humphreys. Each manuscript submitted for publication in this proceedings volume has been independently reviewed and revised

Synchrotron-based soft X-ray spectroscopic studies of the electronic structure of organic semiconducting molecules

NASA Astrophysics Data System (ADS)

Demasi, Alexander

Organic molecules have been the subject of many scientific studies due to their potential for use in a new generation of optoelectronic and semiconducting devices, such as organic photovoltaics and organic light emitting diodes. These studies are motivated by the fact that organic semiconductor devices have several advantages over traditional inorganic semiconductor devices. Unlike inorganic semiconductors, where the electronic properties are a result of the deliberate introduction of dopants to the material, the properties of organic semiconductors are often intrinsic to the molecules themselves. As a result, organic semiconductor devices are frequently less susceptible to contamination by impurities than their inorganic counterparts, which results in the relatively lower cost of producing such devices. Accurate experimental determination of the bulk and surface electronic structure of organic semiconductors is a prerequisite in developing a comprehensive understanding of such materials. The organic materials studied in this thesis were N,N-Ethylene-bis(1,1,1trifluoropentane-2,4-dioneiminato)-copper(ii) (abbreviated Cu-TFAC), aluminum tris-8hydroxyquinoline (A1g3), lithium quinolate (Liq), tetracyanoquinodimethane (TCNQ), and tetrafluorotetracyanoquinodimethane (F4TCNQ). The electronic structures of these materials were measured with several synchrotron-based x-ray spectroscopies. X-ray photoemission spectroscopy was used to measure the occupied total density of states and the core-level states of the aforementioned materials. X-ray absorption spectroscopy (XAS) was used to probe the element-specific unoccupied partial density of states (PDOS); its angle-resolved variant was used to measure the orientation of the molecules in a film and, in some circumstances, to gauge the extent of an organic film's crystallinity. Most notably, x-ray emission spectroscopy (XES) measures the element- specific occupied PDOS and, when aided by XAS, resonant XES can additionally be

Direct measurement of the absolute absorption spectrum of individual semiconducting single-wall carbon nanotubes

NASA Astrophysics Data System (ADS)

Blancon, Jean-Christophe; Paillet, Matthieu; Tran, Huy Nam; Than, Xuan Tinh; Guebrou, Samuel Aberra; Ayari, Anthony; Miguel, Alfonso San; Phan, Ngoc-Minh; Zahab, Ahmed-Azmi; Sauvajol, Jean-Louis; Fatti, Natalia Del; Vallée, Fabrice

2013-09-01

The optical properties of single-wall carbon nanotubes are very promising for developing novel opto-electronic components and sensors with applications in many fields. Despite numerous studies performed using photoluminescence or Raman and Rayleigh scattering, knowledge of their optical response is still partial. Here we determine using spatial modulation spectroscopy, over a broad optical spectral range, the spectrum and amplitude of the absorption cross-section of individual semiconducting single-wall carbon nanotubes. These quantitative measurements permit determination of the oscillator strength of the different excitonic resonances and their dependencies on the excitonic transition and type of semiconducting nanotube. A non-resonant background is also identified and its cross-section comparable to the ideal graphene optical absorbance. Furthermore, investigation of the same single-wall nanotube either free standing or lying on a substrate shows large broadening of the excitonic resonances with increase of oscillator strength, as well as stark weakening of polarization-dependent antenna effects, due to nanotube-substrate interaction.

Measurement of the photobleaching kinetics of semiconducting polymer films by the pump - probe method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozimova, A E; Bruevich, V V; Parashchuk, D Yu

2011-12-31

A phenomenological model of the laser photobleaching dynamics of a semiconducting polymer in a dual-beam scheme for different wavelengths of the burning and probe beams is developed. An experimental method is implemented based on this model, which allows one to investigate materials with significantly different photodegradation rates. The photodegradation quantum yield in mixtures of a semiconducting polymer belonging to polyparaphenylene vinylenes (MEH-PPV) with a low-molecular electron acceptor 2,4,7-trinitrofluorenone (TNF) is measured at burning wavelengths of 488 and 514 nm for different component ratios of MEHPPV : TNF. It is found that adding the acceptor decreases the polymer photodegradation quantum yieldmore » by at least four orders of magnitude in the MEH-PPV : TNF = 1 : 0.4 mixture; the photodegradation quantum yields are the same at both wavelengths. It is shown that the photodegradation rates of the MEH-PPV : TNF films measured by laser photobleaching and IR spectroscopy are in good agreement.« less

Synthesis of New Organic Semiconducting Polymer Materials Having High Radiowave Absorption Rate

DTIC Science & Technology

2008-11-01

ISTC Project No. #1571P Synthesis of New Organic Semiconducting Polymer Materials Having High Radiowave Absorption Rate Final Project Technical...Technology Center ( ISTC ), Moscow. REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188 Public reporting burden for this collection of information...polymer materials having high radiowave absorption rate 5a. CONTRACT NUMBER ISTC Registration No: A-1571p 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Nonlinear Optical Properties of Semiconducting Polymers.

DTIC Science & Technology

1990-01-01

geberation in both cis and trans- polyacetylene. In the fast transient photoconductivity area, we will attempt to move into the sub-picosecond regime...spectroscopy (ir through visible) of third harmonic geberation in both cis and trans- polyacetylene. In the fast transient photoconductivity area, we will

Nonlinear Optical Properties of Semiconducting Polymers

DTIC Science & Technology

1990-10-26

harmonic geberation in both cis and trans- polyacetylene. in the fast transient photoconductivity area, we will attempt to move into the sub-picosecond...addition, we plan to carry out a full spectroscopy (ir through visible) of third harmonic geberation in both cis and trans- polyacetylene. In the fast

The effect of system nonlinearities on system noise statistics

NASA Technical Reports Server (NTRS)

Robinson, L. H., Jr.

1971-01-01

The effects are studied of nonlinearities in a baseline communications system on the system noise amplitude statistics. So that a meaningful identification of system nonlinearities can be made, the baseline system is assumed to transmit a single biphase-modulated signal through a relay satellite to the receiving equipment. The significant nonlinearities thus identified include square-law or product devices (e.g., in the carrier reference recovery loops in the receivers), bandpass limiters, and traveling wave tube amplifiers.

Quantum nonlinear optics without photons

NASA Astrophysics Data System (ADS)

Stassi, Roberto; Macrı, Vincenzo; Kockum, Anton Frisk; Di Stefano, Omar; Miranowicz, Adam; Savasta, Salvatore; Nori, Franco

2017-08-01

Spontaneous parametric down-conversion is a well-known process in quantum nonlinear optics in which a photon incident on a nonlinear crystal spontaneously splits into two photons. Here we propose an analogous physical process where one excited atom directly transfers its excitation to a pair of spatially separated atoms with probability approaching 1. The interaction is mediated by the exchange of virtual rather than real photons. This nonlinear atomic process is coherent and reversible, so the pair of excited atoms can transfer the excitation back to the first one: the atomic analog of sum-frequency generation of light. The parameters used to investigate this process correspond to experimentally demonstrated values in ultrastrong circuit quantum electrodynamics. This approach can be extended to realize other nonlinear interatomic processes, such as four-atom mixing, and is an attractive architecture for the realization of quantum devices on a chip. We show that four-qubit mixing can efficiently implement quantum repetition codes and, thus, can be used for error-correction codes.

Nonlinearity response correction in phase-shifting deflectometry

NASA Astrophysics Data System (ADS)

Nguyen, Manh The; Kang, Pilseong; Ghim, Young-Sik; Rhee, Hyug-Gyo

2018-04-01

Owing to the nonlinearity response of digital devices such as screens and cameras in phase-shifting deflectometry, non-sinusoidal phase-shifted fringe patterns are generated and additional measurement errors are introduced. In this paper, a new deflectometry technique is described for overcoming these problems using a pre-distorted pattern combined with an advanced iterative algorithm. The experiment results show that this method can reconstruct the 3D surface map of a sample without fringe print-through caused by the nonlinearity response of digital devices. The proposed technique is verified by measuring the surface height variations in a deformable mirror and comparing them with the measurement result obtained using a coordinate measuring machine. The difference between the two measurement results is estimated to be less than 13 µm.

Error free all optical wavelength conversion in highly nonlinear As-Se chalcogenide glass fiber.

PubMed

Ta'eed, Vahid G; Fu, Libin; Pelusi, Mark; Rochette, Martin; Littler, Ian C; Moss, David J; Eggleton, Benjamin J

2006-10-30

We present the first demonstration of all optical wavelength conversion in chalcogenide glass fiber including system penalty measurements at 10 Gb/s. Our device is based on As2Se3 chalcogenide glass fiber which has the highest Kerr nonlinearity (n(2)) of any fiber to date for which either advanced all optical signal processing functions or system penalty measurements have been demonstrated. We achieve wavelength conversion via cross phase modulation over a 10 nm wavelength range near 1550 nm with 7 ps pulses at 2.1 W peak pump power in 1 meter of fiber, achieving only 1.4 dB excess system penalty. Analysis and comparison of the fundamental fiber parameters, including nonlinear coefficient, two-photon absorption coefficient and dispersion parameter with other nonlinear glasses shows that As(2)Se(3) based devices show considerable promise for radically integrated nonlinear signal processing devices.

Optoelectronic devices, plasmonics, and photonics with topological insulators

NASA Astrophysics Data System (ADS)

Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

2017-03-01

Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

Insight into the Role of Size Modulation on Tuning the Band Gap and Photocatalytic Performance of Semiconducting Nitrogen-Doped Graphene.

PubMed

Yang, Mei-Ling; Zhang, Nan; Lu, Kang-Qiang; Xu, Yi-Jun

2017-04-04

Considerable attention has been focused on transforming graphene (GR) into semiconducting GR by diverse strategies, which can perform as one type of promising photocatalyst toward various photoredox reactions. Herein, we report a facile alkali-assisted hydrothermal method for simultaneous tailoring of the lateral size of GR and nitrogen (N) doping into the GR matrix, by which small-sized N-doped GR (S-NGR) can be obtained. For comparison, large-sized N-doped GR (L-NGR) has also been achieved through the same hydrothermal treatment except for the addition of alkali. The photocatalytic activity test shows that S-NGR exhibits much higher activity than L-NGR toward the degradation of organic pollutants under visible-light irradiation. Structure-photoactivity correlation analysis and characterization suggest that the underlying origin for the significantly enhanced visible-light photoactivity of S-NGR in comparison with L-NGR can be assigned to the lateral size decrease in the NGR sheet, which is able to tune the band gap of semiconducting NGR, to facilitate the separation and transfer of photogenerated charge carriers, and to improve the adsorption capacity of NGR toward the reactant. It is expected that this work will cast new light on the judicious utilization of semiconducting GR with controlled size modulation and heteroatom doping to tune its physicochemical properties, thereby advancing further developments in the rational design of more efficient semiconducting GR materials for diverse applications in photocatalysis.

Theory and design of nonlinear metamaterials

NASA Astrophysics Data System (ADS)

Rose, Alec Daniel

If electronics are ever to be completely replaced by optics, a significant possibility in the wake of the fiber revolution, it is likely that nonlinear materials will play a central and enabling role. Indeed, nonlinear optics is the study of the mechanisms through which light can change the nature and properties of matter and, as a corollary, how one beam or color of light can manipulate another or even itself within such a material. However, of the many barriers preventing such a lofty goal, the narrow and limited range of properties supported by nonlinear materials, and natural materials in general, stands at the forefront. Many industries have turned instead to artificial and composite materials, with homogenizable metamaterials representing a recent extension of such composites into the electromagnetic domain. In particular, the inclusion of nonlinear elements has caused metamaterials research to spill over into the field of nonlinear optics. Through careful design of their constituent elements, nonlinear metamaterials are capable of supporting an unprecedented range of interactions, promising nonlinear devices of novel design and scale. In this context, I cast the basic properties of nonlinear metamaterials in the conventional formalism of nonlinear optics. Using alternately transfer matrices and coupled mode theory, I develop two complementary methods for characterizing and designing metamaterials with arbitrary nonlinear properties. Subsequently, I apply these methods in numerical studies of several canonical metamaterials, demonstrating enhanced electric and magnetic nonlinearities, as well as predicting the existence of nonlinear magnetoelectric and off-diagonal nonlinear tensors. I then introduce simultaneous design of the linear and nonlinear properties in the context of phase matching, outlining five different metamaterial phase matching methods, with special emphasis on the phase matching of counter propagating waves in mirrorless parametric amplifiers

Nonlinear optical inves

NASA Astrophysics Data System (ADS)

Zidan, M. D.; Arfan, A.; Allahham, A.

2017-03-01

Z-scan technique was used to investigate the nonlinear optical properties of Quinine and 1-(carboxymethyl)-6-methoxy-4-(3-(3-vinylpiperidin-4-yl) propanoyl) quinolin-1-ium chloride (Quinotoxine) salts. The two salts were characterized using UV-visible, FTIR and NMR measurements. The characterization spectra confirm the expected molecular structure of the prepared ;Quinotoxine ; salt. The z-scan measurements were performed with a CW Diode laser at 635 nm wavelength and 26 mW power. The nonlinear absorption coefficient (β), nonlinear refractive index (n2), the ground-state absorption cross sections (σg), the excited-state absorption cross sections (σex) and thermo-optic coefficient of the samples were determined. Our results reveal that the σex is higher than the σg indicating that the reverse saturable absorption (RSA) is the dominating mechanism for the observed absorption nonlinearities. The results suggest that this material should be considered as a promising candidate for future optical devices applications.

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field

NASA Astrophysics Data System (ADS)

Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

2016-06-01

The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m

First-principles study of direct and narrow band gap semiconducting β -CuGaO 2

DOE PAGES

Nguyen, Manh Cuong; Zhao, Xin; Wang, Cai-Zhuang; ...

2015-04-16

Semiconducting oxides have attracted much attention due to their great stability in air or water and the abundance of oxygen. Recent success in synthesizing a metastable phase of CuGaO 2 with direct narrow band gap opens up new applications of semiconducting oxides as absorber layer for photovoltaics. Using first-principles density functional theory calculations, we investigate the thermodynamic and mechanical stabilities as well as the structural and electronic properties of the β-CuGaO 2 phase. Our calculations show that the β-CuGaO 2 structure is dynamically and mechanically stable. The energy band gap is confirmed to be direct at the Γ point ofmore » Brillouin zone. In conclusion, the optical absorption occurs right at the band gap edge and the density of states near the valance band maximum is large, inducing an intense absorption of light as observed in experiment.« less

Laser And Nonlinear Optical Materials For Laser Remote Sensing

NASA Technical Reports Server (NTRS)

Barnes, Norman P.

2005-01-01

NASA remote sensing missions involving laser systems and their economic impact are outlined. Potential remote sensing missions include: green house gasses, tropospheric winds, ozone, water vapor, and ice cap thickness. Systems to perform these measurements use lanthanide series lasers and nonlinear devices including second harmonic generators and parametric oscillators. Demands these missions place on the laser and nonlinear optical materials are discussed from a materials point of view. Methods of designing new laser and nonlinear optical materials to meet these demands are presented.

Studies on third-order optical nonlinearity and power limiting of conducting polymers using the z-scan technique for nonlinear optical applications

NASA Astrophysics Data System (ADS)

Pramodini, S.; Sudhakar, Y. N.; SelvaKumar, M.; Poornesh, P.

2014-04-01

We present the synthesis and characterization of third-order optical nonlinearity and optical limiting of the conducting polymers poly (aniline-co-o-anisidine) and poly (aniline-co-pyrrole). Nonlinear optical studies were carried out by employing the z-scan technique using a He-Ne laser operating in continuous wave mode at 633 nm. The copolymers exhibited a reverse saturable absorption process and self-defocusing properties under the experimental conditions. The estimated values of βeff, n2 and χ(3) were found to be of the order of 10-2 cm W-1, 10-5 esu and 10-7 esu respectively. Self-diffraction rings were observed due to refractive index change when exposed to the laser beam. The copolymers possess a lower limiting threshold and clamping level, which is essential to a great extent for power limiting devices. Therefore, copolymers of aniline emerge as a potential candidate for nonlinear optical device applications.

Influence of La addition on the semi-conductive properties of passive films formed on Cu-Ni alloy

NASA Astrophysics Data System (ADS)

Leng, Xiang; Zhang, Yadong; Zhou, Qiongyu; Zhang, Yinghui; Wang, Zhigang; Wang, Hang; Yang, Bin

2018-05-01

The semi-conductive properties of passive films formed on Cu-Ni alloy and Cu-Ni-La alloy were investigated in 0.1 M NaOH solution, by employing electrochemical impedance spectroscopy (EIS), Mott–Schottky analysis and point defect model (PDM). Results indicate that both the passive films formed on Cu-Ni alloy and Cu-Ni-La alloy display p-type semi-conductive characteristics with cation vacancies in order of magnitude of 1020 cm3. Compared with Cu-Ni alloy, La addition could significantly improve the corrosion resistance, due to a superior barrier passive film formed Cu-Ni-La alloy with a bigger film resistance (R f), increased passive film thickness (L ss) in conjunction with decreased diffusion coefficient (D 0).

Scanning microwave microscopy applied to semiconducting GaAs structures

NASA Astrophysics Data System (ADS)

Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

2018-02-01

A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

Amplified spontaneous emission properties of semiconducting organic materials.

PubMed

Calzado, Eva M; Boj, Pedro G; Díaz-García, María A

2010-06-18

This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature.

Amplified Spontaneous Emission Properties of Semiconducting Organic Materials

PubMed Central

Calzado, Eva M.; Boj, Pedro G.; Díaz-García, María A.

2010-01-01

This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature. PMID:20640167

Integrating Semiconducting Catalyst of ReS2 Nanosheets into P-silicon Photocathode toward Enhanced Solar Water Reduction.

PubMed

Zhao, Heng; Dai, Zhengyi; Xu, Xiaoyong; Pan, Jing; Hu, Jingguo

2018-06-22

Loading the electro-catalysts at the semiconductor-electrolyte interface is one of promising strategies to develop photoelectrochemical (PEC) water splitting cells. However, the assembly of compatible and synergistic heterojunction between the semiconductor and the selected catalyst remains challenging. Here, we report a hierarchical p-Si/ReS2 heterojunction photocathode fabricated through uniform growth vertically standing ReS2 nanosheets (NSs) on planar p-Si substrate for solar-driven hydrogen evolution reaction (HER). The laden ReS2 NSs not only serve as a high-activity HER catalyst but also render a suitable electronic band coupled with p-Si into a Ⅱ-type heterojunction, which facilitates the photo-induced charge production, separation and utilization. As a result, the assembled p-Si/ReS2 photocathode exhibits a 23-fold-increased photocurrent density at 0 VRHE and a 35-fold-enhanced photoconversion efficiency compared to pure p-Si counterpart. The bifunctional ReS2 as catalyst and semiconductor enables multi effects in improving light harvesting, charge separation and catalytic kinetics, highlighting the potential of semiconducting catalysts integrated into solar water splitting devices.

Photoinduced Nonlinear Mixing of Terahertz Dipole Resonances in Graphene Metadevices.

PubMed

In, Chihun; Kim, Hyeon-Don; Min, Bumki; Choi, Hyunyong

2016-02-17

The first experimental demonstration of nonlinear terahertz difference-frequency generation in a hybrid graphene metadevice is reported. Decades of research have revealed that terahertz-wave generation is impossible in single-layer graphene. This limitation is overcome and nonlinear terahertz generation by ultra-short optical pulse injection is demonstrated. This device is an essential step toward atomically thin, nonlinear terahertz optoelectronic components. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The quantum pinch effect in semiconducting quantum wires: A bird’s-eye view

NASA Astrophysics Data System (ADS)

Kushwaha, Manvir S.

2016-01-01

Those who measure success with culmination do not seem to be aware that life is a journey not a destination. This spirit is best reflected in the unceasing failures in efforts for solving the problem of controlled thermonuclear fusion for even the simplest pinches for over decades; and the nature keeps us challenging with examples. However, these efforts have permitted researchers the obtention of a dense plasma with a lifetime that, albeit short, is sufficient to study the physics of the pinch effect, to create methods of plasma diagnostics, and to develop a modern theory of plasma processes. Most importantly, they have impregnated the solid state plasmas, particularly the electron-hole plasmas in semiconductors, which do not suffer from the issues related with the confinement and which have demonstrated their potential not only for the fundamental physics but also for the device physics. Here, we report on a two-component, cylindrical, quasi-one-dimensional quantum plasma subjected to a radial confining harmonic potential and an applied magnetic field in the symmetric gauge. It is demonstrated that such a system, as can be realized in semiconducting quantum wires, offers an excellent medium for observing the quantum pinch effect at low temperatures. An exact analytical solution of the problem allows us to make significant observations: Surprisingly, in contrast to the classical pinch effect, the particle density as well as the current density display a determinable maximum before attaining a minimum at the surface of the quantum wire. The effect will persist as long as the equilibrium pair density is sustained. Therefore, the technological promise that emerges is the route to the precise electronic devices that will control the particle beams at the nanoscale.

Fast Neural Solution Of A Nonlinear Wave Equation

NASA Technical Reports Server (NTRS)

Barhen, Jacob; Toomarian, Nikzad

1996-01-01

Neural algorithm for simulation of class of nonlinear wave phenomena devised. Numerically solves special one-dimensional case of Korteweg-deVries equation. Intended to be executed rapidly by neural network implemented as charge-coupled-device/charge-injection device, very-large-scale integrated-circuit analog data processor of type described in "CCD/CID Processors Would Offer Greater Precision" (NPO-18972).

Photonic Switching Devices Using Light Bullets

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

1997-01-01

The present invention is directed toward a unique ultra-fast, all-optical switching device or switch made with readily available, relatively inexpensive, highly nonlinear photonic glasses. These photonic glasses have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counterpropagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide, and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. One advantage presented by the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another feature of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in highly nonlinear glasses.

Fundamental bounds on the operation of Fano nonlinear isolators

NASA Astrophysics Data System (ADS)

Sounas, Dimitrios L.; Alù, Andrea

2018-03-01

Nonlinear isolators have attracted significant attention for their ability to break reciprocity and provide isolation without the need of an external bias. A popular approach for the design of such devices is based on Fano resonators, which, due to their sharp frequency response, can lead to very large isolation for moderate input intensities. Here, we show that, independent of their specific implementation, these devices are subject to fundamental bounds on the transmission coefficient in the forward direction versus their quality factor, input power, and nonreciprocal intensity range. Our analysis quantifies a general tradeoff between forward transmission and these metrics, stemming directly from time-reversal symmetry, and that unitary transmission is only possible for vanishing nonreciprocity. Our results also shed light on the operation of resonant nonlinear isolators, reveal their fundamental limitations, and provide indications on how it is possible to design nonlinear isolators with optimal performance.

Device for separating non-ions from ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibrahim, Yehia M.; Smith, Richard D.

2017-01-31

A device for separating non-ions from ions is disclosed. The device includes a plurality of electrodes positioned around a center axis of the device and having apertures therein through which the ions are transmitted. An inner diameter of the apertures varies in length. At least a portion of the center axis between the electrodes is non-linear.

New-class of Semiconducting 2D materials: Tin Dichalcogenides (SnX2)

NASA Astrophysics Data System (ADS)

Ataca, Can; Wu, Kedi; Saritas, Kayahan; Tongay, Sefaattin; Grossman, Jeffrey C.

2015-03-01

Recent studies have focused on a new generation of atomically thin films of semiconducting materials. A broad family of two-dimensional (2D) semiconducting transition metal dichalcogenides (MX2) have been fabricated and investigated in monolayer, bilayer and few layer form. In this work, we investigated the electronic, optical and elastic properties of single and few layer and bulk SnX2 (X = S, Se) both theoretically and experimentally. Using density functional theory (DFT) we carried out stability analysis through phonon and electronic, optical and elastic structure calculations. Single-few layer SnX2s are mechanically exfoliated and Raman and photoluminescence (PL) measurements are taken. UV-Vis absorption spectrum together with PL measurements and DFT calculations yield an indirect gap of ~ 2.5 eV for SnS2 structures (bulk). Tunability of the energy band gap and indirect-direct gap transitions are investigated by controlling the number of layers and applied stress. Lowering the number of layers decreases the indirect gap (0.1-0.3 eV), but indirect-direct gap transition occurs when layer-layer distance is reduced. Due to flexibility in engineering the electronic and optical properties, SnX2 compounds are promising materials for future optoelectronic nanoscale applications.

A New Approach to the Computer Modeling of Amorphous Nanoporous Structures of Semiconducting and Metallic Materials: A Review

PubMed Central

Romero, Cristina; Noyola, Juan C.; Santiago, Ulises; Valladares, Renela M.; Valladares, Alexander; Valladares, Ariel A.

2010-01-01

We review our approach to the generation of nanoporous materials, both semiconducting and metallic, which leads to the existence of nanopores within the bulk structure. This method, which we have named as the expanding lattice method, is a novel transferable approach which consists first of constructing crystalline supercells with a large number of atoms and a density close to the real value and then lowering the density by increasing the volume. The resulting supercells are subjected to either ab initio or parameterized—Tersoff-based—molecular dynamics processes at various temperatures, all below the corresponding bulk melting points, followed by geometry relaxations. The resulting samples are essentially amorphous and display pores along some of the “crystallographic” directions without the need of incorporating ad hoc semiconducting atomic structural elements such as graphene-like sheets and/or chain-like patterns (reconstructive simulations) or of reproducing the experimental processes (mimetic simulations). We report radial (pair) distribution functions, nanoporous structures of C and Si, and some computational predictions for their vibrational density of states. We present numerical estimates and discuss possible applications of semiconducting materials for hydrogen storage in potential fuel tanks. Nanopore structures for metallic elements like Al and Au also obtained through the expanding lattice method are reported.

Photonic nonlinearities via quantum Zeno blockade.

PubMed

Sun, Yu-Zhu; Huang, Yu-Ping; Kumar, Prem

2013-05-31

Realizing optical-nonlinear effects at a single-photon level is a highly desirable but also extremely challenging task, because of both fundamental and practical difficulties. We present an avenue to surmounting these difficulties by exploiting quantum Zeno blockade in nonlinear optical systems. Considering specifically a lithium-niobate microresonator, we find that a deterministic phase gate can be realized between single photons with near-unity fidelity. Supported by established techniques for fabricating and operating such devices, our approach can provide an enabling tool for all-optical applications in both classical and quantum domains.

A nonlinear MEMS electrostatic kinetic energy harvester for human-powered biomedical devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Y.; Cottone, F.; Marty, F.

This article proposes a silicon-based electrostatic kinetic energy harvester with an ultra-wide operating frequency bandwidth from 1 Hz to 160 Hz. This large bandwidth is obtained, thanks to a miniature tungsten ball impacting with a movable proof mass of silicon. The motion of the silicon proof mass is confined by nonlinear elastic stoppers on the fixed part standing against two protrusions of the proof mass. The electrostatic transducer is made of interdigited-combs with a gap-closing variable capacitance that includes vertical electrets obtained by corona discharge. Below 10 Hz, the e-KEH offers 30.6 nJ per mechanical oscillation at 2 g{sub rms}, which makes it suitable formore » powering biomedical devices from human motion. Above 10 Hz and up to 162 Hz, the harvested power is more than 0.5 μW with a maximum of 4.5 μW at 160 Hz. The highest power of 6.6 μW is obtained without the ball at 432 Hz, in accordance with a power density of 142 μW/cm{sup 3}. We also demonstrate the charging of a 47-μF capacitor to 3.5 V used to power a battery-less wireless temperature sensor node.« less

Arbitrary-ratio power splitter based on nonlinear multimode interference coupler

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tajaldini, Mehdi; Young Researchers and Elite Club, Baft Branch, Islamic Azad University, Baft; Jafri, Mohd Zubir Mat

2015-04-24

We propose an ultra-compact multimode interference (MMI) power splitter based on nonlinear effects from simulations using nonlinear modal propagation analysis (NMPA) cooperation with finite difference Method (FDM) to access free choice of splitting ratio. Conventional multimode interference power splitter could only obtain a few discrete ratios. The power splitting ratio may be adjusted continuously while the input set power is varying by a tunable laser. In fact, using an ultra- compact MMI with a simple structure that is launched by a tunable nonlinear input fulfills the problem of arbitrary-ratio in integrated photonics circuits. Silicon on insulator (SOI) is used asmore » the offered material due to the high contrast refractive index and Centro symmetric properties. The high-resolution images at the end of the multimode waveguide in the simulated power splitter have a high power balance, whereas access to a free choice of splitting ratio is not possible under the linear regime in the proposed length range except changes in the dimension for any ratio. The compact dimensions and ideal performance of the device are established according to optimized parameters. The proposed regime can be extended to the design of M×N arbitrary power splitters ratio for programmable logic devices in all optical digital signal processing. The results of this study indicate that nonlinear modal propagation analysis solves the miniaturization problem for all-optical devices based on MMI couplers to achieve multiple functions in a compact planar integrated circuit and also overcomes the limitations of previously proposed methods for nonlinear MMI.« less

Validating the technological feasibility of yttria-stabilized zirconia-based semiconducting-ionic composite in intermediate-temperature solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Cai, Yixiao; Wang, Baoyuan; Wang, Yi; Xia, Chen; Qiao, Jinli; van Aken, Peter A.; Zhu, Bin; Lund, Peter

2018-04-01

YSZ as the electrolyte of choice has dominated the progressive development of solid oxide fuel cell (SOFC) technologies for many years. To enable SOFCs operating at intermediate temperatures of 600 °C or below, major technical advances were built on a foundation of a thin-film YSZ electrolyte, NiO anode, and perovskite cathode, e.g. La0.6Sr0.4Co0.8Fe0.2O3-δ (LSCF). Inspired by functionalities in engineered heterostructure interfaces, the present work uses the components from state-of-the-art SOFCs, i.e, the anode NiO-YSZ and the cathode LSCF-YSZ, or the convergence of all three components, i.e., NiO-YSZ-LSCF, to fabricate semiconductor-ionic membranes (SIMs) and devices. A series of proof-of-concept fuel cell devices are designed by using each of the above SIMs sandwiched between two semiconducting Ni0.8Co0.15Al0.05LiO2-δ (NCAL) layers. We systematically compare these novel designs at 600 °C with two reference fuel cells: a commercial product of anode-supported YSZ electrolyte thin-film cell, and a lab-assembled fuel cell with a conventional configuration of NiO-YSZ (anode)/YSZ (electrolyte)/LSCF-YSZ (cathode). In comparison to the reference cells, the SIM device in a configuration of NCAL/NiO-YSZ-LSCF/NCAL reaches more than 3-fold enhancement of the maximum power output. By using spherical aberration-corrected transmission electron microscopy and spectroscopy approaches, this work offers insight into the mechanisms underlying SIM-associated SOFC performance enhancement.

On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.

PubMed

Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A

2017-06-01

In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm 2 V -1 s -1 ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metallic → Semiconducting transitions in HX(X=F, Br, Cl) adsorbed (5,5) and (7,7) carbon nanotubes: DFT study

NASA Astrophysics Data System (ADS)

Srivastava, Reena; Shrivastava, Sadhana; Srivastava, Anurag

2018-05-01

The edge sensitivity of two different chirality (5,5) and (7,7) armchair carbon nanotubes towards toxic hydrogen halides (HF, HBr and HCl) has been analyzed by using density functional theory based ab-initio approach. The edge sensitivity has been discussed in terms of the variations in the electronic band structure of (5,5) and (7,7) carbon nanotube. The observation shows metallic to semiconducting phase transition in HF and HBr adsorbed (5,5) CNT, whereas for HCl adsorbed, it is more metallic. Whereas HBr and HCl adsorbed (7,7) CNT confirms metallic→semiconducting transition and shows diameter dependence of properties of CNTs.

Structural and functional engineering of one-dimensional nanostructures for device applications

NASA Astrophysics Data System (ADS)

Singh, Krishna Veer

Fabrication of 1-D nanostructures has been an area of keen interest due to their application in nanodevices. Carbon nanotubes (CNTs) and semiconducting nanorods are 1-D nanostructures of great importance. There are various challenges related to structural and functional aspects of these materials, which need to be addressed for their adaptation in devices. To this end, two approaches have been developed: (1) structural engineering of the nanorods and (2) functionalization of CNTs for device applications. In first approach, a new technique to produce single crystal semiconducting nanorods was developed. Single crystalline structure of nanorods is essential to obtain reproducible performance. The novel synthesis technique 'template assisted sonoelectrochemical deposition' was utilized to develop 'copper sulfide' and 'copper indium sulfide' nanorods. The use of sonoelectrochemical method resulted in the best deposition rate as compared to stirring-assisted and regular electrochemical deposition, respectively. Observed increase in the bulk electrolyte temperature, high acoustic pressure and shock waves generated from the collapse of bubbles could explain improved mass transport and reaction rate, which results in the formation of single crystal nanorods. Nanorods in the range of 50-200nm in diameter were synthesized and electrically characterized as p-type semiconductors. Excellent structural and repeatable electrical properties of the various nanorods developed by this technique make it suitable for developing nanorods for device applications. In addition, detailed statistical analysis of the polycarbonate templates (50-200 nm nominal pore size) used in electrodeposition provided a better understanding of template's as well as nanorods' structure. In the second approach, we functionally engineered single walled carbon nanotubes (SWNTs) with peptide nucleic acid (PNA) to form functional conjugates for molecular electronics. SWNT-PNA-SWNT conjugates were synthesized

Raman Antenna Effect in Semiconducting Nanowires.

NASA Astrophysics Data System (ADS)

Chen, Gugang; Xiong, Qihua; Eklund, Peter

2007-03-01

A novel Raman antenna effect has been observed in Raman scattering experiments recently carried out on individual GaP nanowires [1]. The Raman antenna effect is perfectly general and should appear in all semiconducting nanowires. It is characterized by an anomalous increase in the Raman cross section for scattering from LO or TO phonons when the electric field of the incident laser beam is parallel to the nanowire axis. We demonstrate that the explanation for the effect lies in the polarization dependence of the Mie scattering from the nanowire and the concomitant polarization-dependent electric field set up inside the wire. Our analysis involves calculations of the internal electric field using the discrete dipole approximation (DDA). We find that the Raman antenna effect happens only for nanowire diameters d<λ/4, where λ is the excitation laser wavelength. Our calculations are found in good agreement with recent experimental results for scattering from individual GaP nanowires. [1] Q. Xiong, G. Chen, G. D. Mahan, P. C. Eklund, in preparation, 2006.

Real-Time Nonlinear Optical Information Processing.

DTIC Science & Technology

1979-06-01

operations aree presented. One approach realizes the halftone method of nonlinear optical processing in real time by replacing the conventional...photographic recording medium with a real-time image transducer. In the second approach halftoning is eliminated and the real-time device is used directly

Diketopyrrolopyrrole-based semiconducting polymer nanoparticles for in vivo second near-infrared window imaging and image-guided tumor surgery

DOE PAGES

Shou, Kangquan; Tang, Yufu; Chen, Hao; ...

2018-01-01

PDFT1032, a new semiconducting polymer possessing a favorable absorption peak (1032 nm) and outstanding biocompatibility, may be widely applicable in clinical imaging and the surgical treatment of malignancy.

Diketopyrrolopyrrole-based semiconducting polymer nanoparticles for in vivo second near-infrared window imaging and image-guided tumor surgery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shou, Kangquan; Tang, Yufu; Chen, Hao

PDFT1032, a new semiconducting polymer possessing a favorable absorption peak (1032 nm) and outstanding biocompatibility, may be widely applicable in clinical imaging and the surgical treatment of malignancy.

Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

DTIC Science & Technology

2007-03-01

with HF in methanol. For example, for 4.5 nm In0.91Ga0.09P nanoparticles in toluene, there is a dramatic increase in PL quantum efficiency from 8...opto-electronic device applications, for which quantum efficiencies above 50% are typically required for commercial cost-effectiveness. For the...InGaP nanocrystals……… 14 Figure 4: 2D double- quantum 31P NMR spectrum, 4.5 nm InGaP nanocrystals………….…… 15 Figure 5: TEM of of 10 nm, 5 nm

Theoretical investigation of intensity-dependent optical nonlinearity in graphene-aided D-microfiber

NASA Astrophysics Data System (ADS)

Shah, Manoj Kumar; Lu, Rongguo; Zhang, Yali; Ye, Shengwei; Zhang, Shangjian; Liu, Yong

2018-01-01

We theoretically investigate the intensity-dependent optical nonlinearity in graphene-aided D-microfiber, by tuning the chemical potential of graphene and varying radial distance and radii of the D-microfiber. Utilizing an interplay between graphene and the enhanced evanescent field of a guided mode in the waveguide of interest, the net utility of nonlinear coefficient is harnessed up to a very high value of 106 W-1m-1. Importantly, which is ∼ two orders of magnitude larger than in PMMA-graphene-PMMA waveguide. The highly dispersive nature of the waveguide, D ∼ 103 ps/nm-km, and large nonlinear figure-of-merit, FOMNL ∼ 1.29, have raised the possibilities of utilizing slow light structures to operate devices at few watts power level with microscale length. These studies have opened one window towards the next-generation all fiber-optic graphene nonlinear optical devices.

Electrostatic potential in a bent piezoelectric nanowire with consideration of size-dependent piezoelectricity and semiconducting characterization.

PubMed

Wang, K F; Wang, B L

2018-06-22

Determining the electric potential in a bent piezoelectric nanowire (NW) is a fundamental issue of nanogenerators and nanopiezotronics. The combined influence of the flexoelectric effect, the semiconducting performance and the angle of atomic force microscope (AFM) tip has never been studied previously and will be investigated in this paper. The exact solution for the electric potential of a bent piezoelectric semiconductor NW is derived. The electric potential of the present model with consideration of flexoelectric effect varies along the length of the NW and is different from that of the classical piezoelectric model. Flexoelectric effect enhances but the semiconducting performance reduces the electric potential of the NW. In addition, it is found that if the angle of the AFM tip reaches 30°, the error of the electric potential obtained from the model ignored the effect of the angle of the AFM tip is almost 16%, which is unacceptable.

Electrostatic potential in a bent piezoelectric nanowire with consideration of size-dependent piezoelectricity and semiconducting characterization

NASA Astrophysics Data System (ADS)

Wang, K. F.; Wang, B. L.

2018-06-01

Determining the electric potential in a bent piezoelectric nanowire (NW) is a fundamental issue of nanogenerators and nanopiezotronics. The combined influence of the flexoelectric effect, the semiconducting performance and the angle of atomic force microscope (AFM) tip has never been studied previously and will be investigated in this paper. The exact solution for the electric potential of a bent piezoelectric semiconductor NW is derived. The electric potential of the present model with consideration of flexoelectric effect varies along the length of the NW and is different from that of the classical piezoelectric model. Flexoelectric effect enhances but the semiconducting performance reduces the electric potential of the NW. In addition, it is found that if the angle of the AFM tip reaches 30°, the error of the electric potential obtained from the model ignored the effect of the angle of the AFM tip is almost 16%, which is unacceptable.

Nonlinear optical polymers for electro-optic signal processing

NASA Technical Reports Server (NTRS)

Lindsay, Geoffrey A.

1991-01-01

Photonics is an emerging technology, slated for rapid growth in communications systems, sensors, imagers, and computers. Its growth is driven by the need for speed, reliability, and low cost. New nonlinear polymeric materials will be a key technology in the new wave of photonics devices. Electron-conjubated polymeric materials offer large electro-optic figures of merit, ease of processing into films and fibers, ruggedness, low cost, and a plethora of design options. Several new broad classes of second-order nonlinear optical polymers were developed at the Navy's Michelson Laboratory at China Lake, California. Polar alignment in thin film waveguides was achieved by electric-field poling and Langmuir-Blodgett processing. Our polymers have high softening temperatures and good aging properties. While most of the films can be photobleached with ultraviolet (UV) light, some have excellent stability in the 500-1600 nm range, and UV stability in the 290-310 nm range. The optical nonlinear response of these polymers is subpicosecond. Electro-optic switches, frequency doublers, light modulators, and optical data storage media are some of the device applications anticipated for these polymers.

Semiconducting Organic-Inorganic Nanodots Heterojunctions: Platforms for General Photoelectrochemical Bioanalysis Application.

PubMed

Wang, Qian; Ruan, Yi-Fan; Zhao, Wei-Wei; Lin, Peng; Xu, Jing-Juan; Chen, Hong-Yuan

2018-03-20

In this study, semiconducting organic polymer dots (Pdots) and inorganic quantum dots (Qdots) were first utilized to construct the organic-inorganic nanodots heterojunction for the photoelectrochemical (PEC) bioanalysis application. Specifically, n-type CdS Qdots, p-type CdTe Qdots, and tetraphenylporphyrin (TPP)-doped poly[(9,9-dioctylfluorenyl-2,7-diyl)- co-(1,4-benzo-{2,1',3}-thiadazole)] (PFBT) Pdots were fabricated, and their energy levels, that is, their valence band (VB)/conduction band (CB) or lowest unoccupied molecular orbital (LUMO)/highest occupied molecular orbital (HOMO) values, were also determined. Then, these nanodots were integrated to construct four types of p-n and p-p organic-inorganic nanodots heterojunctions, that is, CdS Qdots/TPP-doped PFBT Pdots, TPP-doped PFBT Pdots/CdS Qdots, CdTe Qdots/TPP-doped PFBT Pdots, and TPP-doped PFBT Pdots/CdTe Qdots, on the transparent glass electrode. Upon light irradiation, four heterojunctions exhibited different PEC behaviors with some having prominent photocurrent enhancement. With the model molecule l-cysteine (l-cys) as target, the proposed PEC sensor exhibited good performances. In brief, this work presents the first semiconducting organic-inorganic nanodots heterojunction for PEC bioanalysis application, which could be easily used as a general platform for future PEC bioanalysis building. Besides, it is expected to inspire more interest in the design, development, and implementation of various organic-inorganic heterojunctions for advanced PEC bioanalysis in the future.

Morphology controls the thermoelectric power factor of a doped semiconducting polymer

PubMed Central

Patel, Shrayesh N.; Glaudell, Anne M.; Peterson, Kelly A.; Thomas, Elayne M.; O’Hara, Kathryn A.; Lim, Eunhee; Chabinyc, Michael L.

2017-01-01

The electrical performance of doped semiconducting polymers is strongly governed by processing methods and underlying thin-film microstructure. We report on the influence of different doping methods (solution versus vapor) on the thermoelectric power factor (PF) of PBTTT molecularly p-doped with FnTCNQ (n = 2 or 4). The vapor-doped films have more than two orders of magnitude higher electronic conductivity (σ) relative to solution-doped films. On the basis of resonant soft x-ray scattering, vapor-doped samples are shown to have a large orientational correlation length (OCL) (that is, length scale of aligned backbones) that correlates to a high apparent charge carrier mobility (μ). The Seebeck coefficient (α) is largely independent of OCL. This reveals that, unlike σ, leveraging strategies to improve μ have a smaller impact on α. Our best-performing sample with the largest OCL, vapor-doped PBTTT:F4TCNQ thin film, has a σ of 670 S/cm and an α of 42 μV/K, which translates to a large PF of 120 μW m−1 K−2. In addition, despite the unfavorable offset for charge transfer, doping by F2TCNQ also leads to a large PF of 70 μW m−1 K−2, which reveals the potential utility of weak molecular dopants. Overall, our work introduces important general processing guidelines for the continued development of doped semiconducting polymers for thermoelectrics. PMID:28630931

Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

NASA Astrophysics Data System (ADS)

Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

2017-11-01

Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

Nonlinear Circuit Concepts -- An Elementary Experiment.

ERIC Educational Resources Information Center

Matolyak, J.; And Others

1983-01-01

Describes equipment and procedures for an experiment using diodes to introduce non-linear electronic devices in a freshman physics laboratory. The experiment involves calculation and plotting of the characteristic-curve and load-line to predict the operating point and compare prediction to experimentally determined values. Background information…

Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

NASA Astrophysics Data System (ADS)

Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

2017-11-01

Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.

Spin-current emission governed by nonlinear spin dynamics.

PubMed

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Spin-current emission governed by nonlinear spin dynamics

PubMed Central

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-01-01

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators. PMID:26472712

Nonlinear Dispersive Elastic Waves in Solids: Exact, Approximate, and Numerical Solutions

NASA Astrophysics Data System (ADS)

Khajehtourian, Romik

Wave motion lies at the heart of many disciplines in the physical sciences and engineering. For example, problems and applications involving light, sound, heat, or fluid flow are all likely to involve wave dynamics at some level. A particular class of problems is concerned with the propagation of elastic waves in a solid medium, such as a fiber-reinforced composite material responding to vibratory excitations, or soil and rock admitting seismic waves moments after the onset of an earthquake, or phonon transport in a semiconducting crystal like silicon. Regardless of the type of wave, the dispersion relation provides a fundamental characterization of the elastodynamic properties of the medium. The first part of the dissertation examines the propagation of a large-amplitude elastic wave in a one-dimensional homogeneous medium with a focus on the effects of inherent nonlinearities on the dispersion relation. Considering a thin rod, where the thickness is small compared to the wavelength, an exact, closed-form formulation is presented for the treatment of two types of nonlinearity in the strain-displacement gradient relation: Green-Lagrange and Hencky. The derived relation is then verified by direct time-domain simulations, examining both instantaneous dispersion (by direct observation) and short-term, pre-breaking dispersion (by Fourier transformation). A high-order perturbation analysis is also conducted yielding an explicit analytical space-time solution, which is shown to be spectrally accurate. The results establish a perfect match between theory and simulation and reveal that regardless of the strength of the nonlinearity, the dispersion relation fully embodies all information pertaining to the nonlinear harmonic generation mechanism that unfolds as an arbitrary-profiled wave evolves in the medium. In the second part of the dissertation, the analysis is extended to a continuous periodic thin rod exhibiting multiple phases or embedded local resonators. The

Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2013-11-25

a ballistic one-dimensional conductor is / = £>(£) ■ VgiE)[fR(E) - fdEME , (1) where Vg(E) is the group velocity, D(E) is the density of states... AEROSPACE REPORT NO. ATR-2013-01138 Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors...SCIENCES LABORATORIES The Aerospace Corporation functions as an "architect-engineer" for national security programs, specializing in advanced military

Preparation of polymeric diacetylene thin films for nonlinear optical applications

NASA Technical Reports Server (NTRS)

Frazier, Donald O. (Inventor); Mcmanus, Samuel P. (Inventor); Paley, Mark S. (Inventor); Donovan, David N. (Inventor)

1995-01-01

A method for producing polymeric diacetylene thin films having desirable nonlinear optical characteristics has been achieved by producing amorphous diacetylene polymeric films by simultaneous polymerization of diacetylene monomers in solution and deposition of polymerized diacetylenes on to the surface of a transparent substrate through which ultraviolet light has been transmitted. These amorphous polydiacetylene films produced by photo-deposition from solution possess very high optical quality and exhibit large third order nonlinear optical susceptibilities, such properties being suitable for nonlinear optical devices such as waveguides and integrated optics.

Probing the non-linear transient response of a carbon nanotube mechanical oscillator

NASA Astrophysics Data System (ADS)

Willick, Kyle; Tang, Xiaowu Shirley; Baugh, Jonathan

2017-11-01

Carbon nanotube (CNT) electromechanical resonators have demonstrated unprecedented sensitivities for detecting small masses and forces. The detection speed in a cryogenic setup is usually limited by the CNT contact resistance and parasitic capacitance of cabling. We report the use of a cold heterojunction bipolar transistor amplifying circuit near the device to measure the mechanical amplitude at microsecond timescales. A Coulomb rectification scheme, in which the probe signal is at much lower frequency than the mechanical drive signal, allows investigation of the strongly non-linear regime. The behaviour of transients in both the linear and non-linear regimes is observed and modeled by including Duffing and non-linear damping terms in a harmonic oscillator equation. We show that the non-linear regime can result in faster mechanical response times, on the order of 10 μs for the device and circuit presented, potentially enabling the magnetic moments of single molecules to be measured within their spin relaxation and dephasing timescales.

Two-dimensional B-C-O alloys: a promising class of 2D materials for electronic devices.

PubMed

Zhou, Si; Zhao, Jijun

2016-04-28

Graphene, a superior 2D material with high carrier mobility, has limited application in electronic devices due to zero band gap. In this regard, boron and nitrogen atoms have been integrated into the graphene lattice to fabricate 2D semiconducting heterostructures. It is an intriguing question whether oxygen can, as a replacement of nitrogen, enter the sp2 honeycomb lattice and form stable B-C-O monolayer structures. Here we explore the atomic structures, energetic and thermodynamic stability, and electronic properties of various 2D B-C-O alloys using first-principles calculations. Our results show that oxygen can be stably incorporated into the graphene lattice by bonding with boron. The B and O species favor forming alternate patterns into the chain- or ring-like structures embedded in the pristine graphene regions. These B-C-O hybrid sheets can be either metals or semiconductors depending on the B : O ratio. The semiconducting (B2O)nCm and (B6O3)nCm phases exist under the B- and O-rich conditions, and possess a tunable band gap of 1.0-3.8 eV and high carrier mobility, retaining ∼1000 cm2 V(-1) s(-1) even for half coverage of B and O atoms. These B-C-O alloys form a new class of 2D materials that are promising candidates for high-speed electronic devices.

Third-order optical nonlinearities in bulk and fs-laser inscribed waveguides in strengthened alkali aluminosilcate glass

NASA Astrophysics Data System (ADS)

Almeida, Gustavo F. B.; Almeida, Juliana M. P.; Martins, Renato J.; De Boni, Leonardo; Arnold, Craig B.; Mendonca, Cleber R.

2018-01-01

The development of advanced photonics devices requires materials with large optical nonlinearities, fast response times and high optical transparency, while at the same time allowing for the micro/nano-processing needed for integrated photonics. In this context, glasses have been receiving considerable attention given their relevant optical properties which can be specifically tailored by compositional control. Corning Gorilla® Glass (strengthened alkali aluminosilicate glass) is well-known for its use as a protective screen in mobile devices, and has attracted interest as a potential candidate for optical devices. Therefore, it is crucial not only to expand the knowledge on the fabrication of waveguides in Gorilla Glass under different regimes, but also to determine its nonlinear optical response, both using fs-laser pulses. Thus, this paper reports, for the first time, characterization of the third-order optical nonlinearities of Gorilla Glass, as well as linear and nonlinear characterization of waveguide written with femtosecond pulses under the low repetition rate regime (1 kHz).

Probing Exciton and Charge Dynamics in Organic Thin Films and Photovoltaics with Nonlinear Spectroscopy

NASA Astrophysics Data System (ADS)

McDonough, Thomas J.

Emerging organic solar cell technologies offer unique advantages over silicon solar cells, such as solution processability and the use of flexible substrates, but the efficiencies of these devices do not yet match the efficiency of silicon. Ultrafast nonlinear spectroscopies can probe the fates of photoexcited species on timescales in which these species are lost to channels that do not result in electric current. In the first study, I compare the ultrafast dynamics of singlet fission and charge generation in pentacene films grown on glass and graphene. The molecular orientation is different on the two substrates: the long axis of the pentacene molecules are "standing-up" (normal to the surface) on glass and "lying-down" (parallel to the surface) on graphene. By studying the fluence and polarization dependence of the transient absorption of pentacene on these two substrates, I am able to clarify previous spectral assignments. I identify a broad, isotropic absorption at 853 nm as due in significant part to hole absorption, in contrast to this feature's typical assignment to T1-T2 absorption. At high fluence, additional peaks at 614 and 688 (on glass) nm appear, whose kinetics and anisotropies are not explained by heating, which I assign to charge generation. In the second study, I utilize two-dimensional white-light spectroscopy to study the morphology dependence of exciton diffusion in semiconducting carbon nanotubes. I analyze the spectral diffusion of the S 1-S1 2D-WL lineshape via the center line slope method to separate the homogeneous and inhomogeneous contributions to the lineshape in each sample. I determine a morphology independent homogeneous linewidth of 10 meV, but I find that the inhomogeneous linewidth is sensitive to the particular sample environment. I model our experimental spectra with kinetic Monte Carlo simulations of exciton diffusion in a 1D potential. I also present preliminary bias-dependent transient absorption and 2D-WL measurements of

Tunable Semiconducting Polymer Nanoparticles with INDT-Based Conjugated Polymers for Photoacoustic Molecular Imaging.

PubMed

Stahl, Thomas; Bofinger, Robin; Lam, Ivan; Fallon, Kealan J; Johnson, Peter; Ogunlade, Olumide; Vassileva, Vessela; Pedley, R Barbara; Beard, Paul C; Hailes, Helen C; Bronstein, Hugo; Tabor, Alethea B

2017-06-21

Photoacoustic imaging combines both excellent spatial resolution with high contrast and specificity, without the need for patients to be exposed to ionizing radiation. This makes it ideal for the study of physiological changes occurring during tumorigenesis and cardiovascular disease. In order to fully exploit the potential of this technique, new exogenous contrast agents with strong absorbance in the near-infrared range, good stability and biocompatibility, are required. In this paper, we report the formulation and characterization of a novel series of endogenous contrast agents for photoacoustic imaging in vivo. These contrast agents are based on a recently reported series of indigoid π-conjugated organic semiconductors, coformulated with 1,2-dipalmitoyl-sn-glycero-3-phosphocholine, to give semiconducting polymer nanoparticles of about 150 nm diameter. These nanoparticles exhibited excellent absorption in the near-infrared region, with good photoacoustic signal generation efficiencies, high photostability, and extinction coefficients of up to three times higher than those previously reported. The absorption maximum is conveniently located in the spectral region of low absorption of chromophores within human tissue. Using the most promising semiconducting polymer nanoparticle, we have demonstrated wavelength-dependent differential contrast between vasculature and the nanoparticles, which can be used to unambiguously discriminate the presence of the contrast agent in vivo.

A design multifunctional plasmonic optical device by micro ring system

NASA Astrophysics Data System (ADS)

Pornsuwancharoen, N.; Youplao, P.; Amiri, I. S.; Ali, J.; Yupapin, P.

2018-03-01

A multi-function electronic device based on the plasmonic circuit is designed and simulated by using the micro-ring system. From which a nonlinear micro-ring resonator is employed and the selected electronic devices such as rectifier, amplifier, regulator and filter are investigated. A system consists of a nonlinear micro-ring resonator, which is known as a modified add-drop filter and made of an InGaAsP/InP material. The stacked waveguide of an InGaAsP/InP - graphene -gold/silver is formed as a part of the device, the required output signals are formed by the specific control of input signals via the input and add ports. The material and device aspects are reviewed. The simulation results are obtained using the Opti-wave and MATLAB software programs, all device parameters are based on the fabrication technology capability.

Growing perovskite into polymers for easy-processable optoelectronic devices

NASA Astrophysics Data System (ADS)

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

Growing perovskite into polymers for easy-processable optoelectronic devices

PubMed Central

Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

2015-01-01

Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

Method and apparatus for casting conductive and semiconductive materials

DOEpatents

Ciszek, Theodore F.

1986-01-01

A method and apparatus is disclosed for casting conductive and semiconduce materials. The apparatus includes a plurality of conductive members arranged to define a container-like area having a desired cross-sectional shape. A portion or all of the conductive or semiconductive material which is to be cast is introduced into the container-like area. A means is provided for inducing the flow of an electrical current in each of the conductive members, which currents act collectively to induce a current flow in the material. The induced current flow through the conductive members is in a direction substantially opposite to the induced current flow in the material so that the material is repelled from the conductive members during the casting process.

Selective growth of chirality-enriched semiconducting carbon nanotubes by using bimetallic catalysts from salt precursors.

PubMed

Zhao, Xiulan; Yang, Feng; Chen, Junhan; Ding, Li; Liu, Xiyan; Yao, Fengrui; Li, Meihui; Zhang, Daqi; Zhang, Zeyao; Liu, Xu; Yang, Juan; Liu, Kaihui; Li, Yan

2018-04-19

Bimetallic catalysts play important roles in the selective growth of single-walled carbon nanotubes (SWNTs). Using the simple salts (NH4)6W7O24·6H2O and Co(CH3COO)2·4H2O as precursors, tungsten-cobalt catalysts were prepared. The catalysts were composed of W6Co7 intermetallic compounds and tungsten-dispersed cobalt. With the increase of the W/Co ratio in the precursors, the content of W6Co7 was increased. Because the W6Co7 intermetallic compound can enable the chirality specified growth of SWNTs, the selectivity of the resulting SWNTs is improved at a higher W/Co ratio. At a W/Co ratio of 6 : 4 and under optimized chemical vapor deposition conditions, we realized the direct growth of semiconducting SWNTs with the purity of ∼96%, in which ∼62% are (14, 4) tubes. Using salts as precursors to prepare tungsten-cobalt bimetallic catalysts is flexible and convenient. This offers an efficient pathway for the large-scale preparation of chirality enriched semiconducting SWNTs.

In situ electron microscopy four-point electromechanical characterization of freestanding metallic and semiconducting nanowires.

PubMed

Bernal, Rodrigo A; Filleter, Tobin; Connell, Justin G; Sohn, Kwonnam; Huang, Jiaxing; Lauhon, Lincoln J; Espinosa, Horacio D

2014-02-26

Electromechanical coupling is a topic of current interest in nanostructures, such as metallic and semiconducting nanowires, for a variety of electronic and energy applications. As a result, the determination of structure-property relations that dictate the electromechanical coupling requires the development of experimental tools to perform accurate metrology. Here, a novel micro-electro-mechanical system (MEMS) that allows integrated four-point, uniaxial, electromechanical measurements of freestanding nanostructures in-situ electron microscopy, is reported. Coupled mechanical and electrical measurements are carried out for penta-twinned silver nanowires, their resistance is identified as a function of strain, and it is shown that resistance variations are the result of nanowire dimensional changes. Furthermore, in situ SEM piezoresistive measurements on n-type, [111]-oriented silicon nanowires up to unprecedented levels of ∼7% strain are demonstrated. The piezoresistance coefficients are found to be similar to bulk values. For both metallic and semiconducting nanowires, variations of the contact resistance as strain is applied are observed. These variations must be considered in the interpretation of future two-point electromechanical measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Semiconducting-metallic transition of singlecrystalline ferromagnetic Hf-doped CuCr2Se4 spinels

NASA Astrophysics Data System (ADS)

Maciążek, E.; Malicka, E.; Gągor, A.; Stokłosa, Z.; Groń, T.; Sawicki, B.; Duda, H.; Gudwański, A.

2017-09-01

Chalcogenide spinels show a variety of physical properties and are very good candidates for electronic and high-frequency applications. We report the measurements of magnetic susceptibility, magnetic isotherm, electrical conductivity, thermoelectric power and calculations of the superexchange and double-exchange integrals made for singlecrystalline Cu[CrxHfy]Se4 spinels. The results showed a ferromagnetic order of magnetic moments below the Curie temperatures of 390 K and, an increase in the splitting of the zero-field cooled and field cooled susceptibilities with increasing Hf-content below the room temperature suggesting a slight spin-frustration and a rapid transition from semiconducting to metallic state at room temperature. A quantitative evaluation of the exchange Hamiltonian showed that the total hopping integral rapidly decreased and the bandwidth of the 3d t2g band due to Cr3+ and Cr4+ ions strongly narrowed from 0.76 eV for y = 0 to 0.28 eV for y = 0.14. The narrowing of this band appears to be responsible for semiconducting properties of the Hf-doped CuCr2Se4 spinels below the room temperature.

Amphiphilic semiconducting polymer as multifunctional nanocarrier for fluorescence/photoacoustic imaging guided chemo-photothermal therapy.

PubMed

Jiang, Yuyan; Cui, Dong; Fang, Yuan; Zhen, Xu; Upputuri, Paul Kumar; Pramanik, Manojit; Ding, Dan; Pu, Kanyi

2017-11-01

Chemo-photothermal nanotheranostics has the advantage of synergistic therapeutic effect, providing opportunities for optimized cancer therapy. However, current chemo-photothermal nanotheranostic systems generally comprise more than three components, encountering the potential issues of unstable nanostructures and unexpected conflicts in optical and biophysical properties among different components. We herein synthesize an amphiphilic semiconducting polymer (PEG-PCB) and utilize it as a multifunctional nanocarrier to simplify chemo-photothermal nanotheranostics. PEG-PCB has a semiconducting backbone that not only serves as the diagnostic component for near-infrared (NIR) fluorescence and photoacoustic (PA) imaging, but also acts as the therapeutic agent for photothermal therapy. In addition, the hydrophobic backbone of PEG-PCB provides strong hydrophobic and π-π interactions with the aromatic anticancer drug such as doxorubicin for drug encapsulation and delivery. Such a trifunctionality of PEG-PCB eventually results in a greatly simplified nanotheranostic system with only two components but multimodal imaging and therapeutic capacities, permitting effective NIR fluorescence/PA imaging guided chemo-photothermal therapy of cancer in living mice. Our study thus provides a molecular engineering approach to integrate essential properties into one polymer for multimodal nanotheranostics. Copyright © 2017 Elsevier Ltd. All rights reserved.

Quantum Nonlinear Optics without Photons

NASA Astrophysics Data System (ADS)

Macrı, Vincenzo

Here we propose a physical process analogous to spontaneous parametric down-conversion, where one excited atom directly transfers its excitation to a couple of spatially separated atoms with probability approaching one. The interaction is mediated by the exchange of virtual rather than real photons. This nonlinear optical process is coherent and reversible, so that the couple of excited atoms can transfer back the excitation to the first one: the analogous for atoms of sum-frequency generation. The parameters used here correspond to experimentally-demonstrated values in circuit QED. This approach can be expanded to consider other nonlinear inter-atomic processes as the four-qubit mixing and is an attractive architecture for the realization of quantum devices on a chip.

Method for morphological control and encapsulation of materials for electronics and energy applications

DOEpatents

Ivanov, Ilia N.; Simpson, John T.

2013-06-11

An electronic device comprises a drawn glass tube having opposing ends, a semiconductive material disposed inside of the drawn glass tube, and a first electrode and a second electrode disposed at the opposing ends of the drawn glass tube. A method of making an electrical device comprises disposing a semiconductive material inside of a glass tube, and drawing the glass tube with the semiconductive material disposed therein to form a drawn glass tube. The method of making an electrical device also comprises disposing a first electrode and a second electrode on the opposing ends of the drawn glass tube to form an electric device.

Nonlinear Contact Effects in Staggered Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fischer, Axel; Zündorf, Hilke; Kaschura, Felix; Widmer, Johannes; Leo, Karl; Kraft, Ulrike; Klauk, Hagen

2017-11-01

The static and dynamic electrical characteristics of thin-film transistors (TFTs) are often limited by the parasitic contact resistances, especially for TFTs with a small channel length. For the smallest possible contact resistance, the staggered device architecture has a general advantage over the coplanar architecture of a larger injection area. Since the charge transport occurs over an extended area, it is inherently more difficult to develop an accurate analytical device model for staggered TFTs. Most analytical models for staggered TFTs, therefore, assume that the contact resistance is linear, even though this is commonly accepted not to be the case. Here, we introduce a semiphenomenological approach to accurately fit experimental data based on a highly discretized equivalent network circuit explicitly taking into account the inherent nonlinearity of the contact resistance. The model allows us to investigate the influence of nonlinear contact resistances on the static and dynamic performance of staggered TFTs for different contact layouts with a relatively short computation time. The precise extraction of device parameters enables us to calculate the transistor behavior as well as the potential for optimization in real circuits.

Nonlinear metamaterials for holography

PubMed Central

Almeida, Euclides; Bitton, Ora

2016-01-01

A hologram is an optical element storing phase and possibly amplitude information enabling the reconstruction of a three-dimensional image of an object by illumination and scattering of a coherent beam of light, and the image is generated at the same wavelength as the input laser beam. In recent years, it was shown that information can be stored in nanometric antennas giving rise to ultrathin components. Here we demonstrate nonlinear multilayer metamaterial holograms. A background free image is formed at a new frequency—the third harmonic of the illuminating beam. Using e-beam lithography of multilayer plasmonic nanoantennas, we fabricate polarization-sensitive nonlinear elements such as blazed gratings, lenses and other computer-generated holograms. These holograms are analysed and prospects for future device applications are discussed. PMID:27545581

A multi-component nanocomposite screen-printed ink with non-linear touch sensitive electrical conductivity

NASA Astrophysics Data System (ADS)

Webb, Alexander J.; Szablewski, Marek; Bloor, David; Atkinson, Del; Graham, Adam; Laughlin, Paul; Lussey, David

2013-04-01

Printable electronics is an innovative area of technology with great commercial potential. Here, a screen-printed functional ink, comprising a combination of semiconducting acicular particles, electrically insulating nanoparticles and a base polymer ink, is described that exhibits pronounced pressure sensitive electrical properties for applications in sensing and touch sensitive surfaces. The combination of these components in the as-printed ink yield a complex structure and a large and reproducible touch pressure sensitive resistance range. In contrast to the case for some composite systems, the resistance changes occur down to applied pressures of 13 Pa. Current-voltage measurements at fixed pressures show monotonic non-linear behaviour, which becomes more Ohmic at higher pressures and in all cases shows some hysteresis. The physical basis for conduction, particularly in the low pressure regime, can be described in terms of field assisted quantum mechanical tunnelling.

Homogenized description and retrieval method of nonlinear metasurfaces

NASA Astrophysics Data System (ADS)

Liu, Xiaojun; Larouche, Stéphane; Smith, David R.

2018-03-01

A patterned, plasmonic metasurface can strongly scatter incident light, functioning as an extremely low-profile lens, filter, reflector or other optical device. When the metasurface is patterned uniformly, its linear optical properties can be expressed using effective surface electric and magnetic polarizabilities obtained through a homogenization procedure. The homogenized description of a nonlinear metasurface, however, presents challenges both because of the inherent anisotropy of the medium as well as the much larger set of potential wave interactions available, making it challenging to assign effective nonlinear parameters to the otherwise inhomogeneous layer of metamaterial elements. Here we show that a homogenization procedure can be developed to describe nonlinear metasurfaces, which derive their nonlinear response from the enhanced local fields arising within the structured plasmonic elements. With the proposed homogenization procedure, we are able to assign effective nonlinear surface polarization densities to a nonlinear metasurface, and link these densities to the effective nonlinear surface susceptibilities and averaged macroscopic pumping fields across the metasurface. These effective nonlinear surface polarization densities are further linked to macroscopic nonlinear fields through the generalized sheet transition conditions (GSTCs). By inverting the GSTCs, the effective nonlinear surface susceptibilities of the metasurfaces can be solved for, leading to a generalized retrieval method for nonlinear metasurfaces. The application of the homogenization procedure and the GSTCs are demonstrated by retrieving the nonlinear susceptibilities of a SiO2 nonlinear slab. As an example, we investigate a nonlinear metasurface which presents nonlinear magnetoelectric coupling in near infrared regime. The method is expected to apply to any patterned metasurface whose thickness is much smaller than the wavelengths of operation, with inclusions of arbitrary geometry

Graphene and Carbon Quantum Dot-Based Materials in Photovoltaic Devices: From Synthesis to Applications

PubMed Central

Paulo, Sofia; Palomares, Emilio; Martinez-Ferrero, Eugenia

2016-01-01

Graphene and carbon quantum dots have extraordinary optical and electrical features because of their quantum confinement properties. This makes them attractive materials for applications in photovoltaic devices (PV). Their versatility has led to their being used as light harvesting materials or selective contacts, either for holes or electrons, in silicon quantum dot, polymer or dye-sensitized solar cells. In this review, we summarize the most common uses of both types of semiconducting materials and highlight the significant advances made in recent years due to the influence that synthetic materials have on final performance. PMID:28335285

Topological nature of nonlinear optical effects in solids

PubMed Central

Morimoto, Takahiro; Nagaosa, Naoto

2016-01-01

There are a variety of nonlinear optical effects including higher harmonic generations, photovoltaic effects, and nonlinear Kerr rotations. They are realized by strong light irradiation to materials that results in nonlinear polarizations in the electric field. These are of great importance in studying the physics of excited states of the system as well as for applications to optical devices and solar cells. Nonlinear properties of materials are usually described by nonlinear susceptibilities, which have complex expressions including many matrix elements and energy denominators. On the other hand, a nonequilibrium steady state under an electric field periodic in time has a concise description in terms of the Floquet bands of electrons dressed by photons. We show theoretically, using the Floquet formalism, that various nonlinear optical effects, such as the shift current in noncentrosymmetric materials, photovoltaic Hall response, and photo-induced change of order parameters under the continuous irradiation of monochromatic light, can be described in a unified fashion by topological quantities involving the Berry connection and Berry curvature. We found that vector fields defined with the Berry connections in the space of momentum and/or parameters govern the nonlinear responses. This topological view offers a route to designing nonlinear optical materials. PMID:27386523

Topological nature of nonlinear optical effects in solids.

PubMed

Morimoto, Takahiro; Nagaosa, Naoto

2016-05-01

There are a variety of nonlinear optical effects including higher harmonic generations, photovoltaic effects, and nonlinear Kerr rotations. They are realized by strong light irradiation to materials that results in nonlinear polarizations in the electric field. These are of great importance in studying the physics of excited states of the system as well as for applications to optical devices and solar cells. Nonlinear properties of materials are usually described by nonlinear susceptibilities, which have complex expressions including many matrix elements and energy denominators. On the other hand, a nonequilibrium steady state under an electric field periodic in time has a concise description in terms of the Floquet bands of electrons dressed by photons. We show theoretically, using the Floquet formalism, that various nonlinear optical effects, such as the shift current in noncentrosymmetric materials, photovoltaic Hall response, and photo-induced change of order parameters under the continuous irradiation of monochromatic light, can be described in a unified fashion by topological quantities involving the Berry connection and Berry curvature. We found that vector fields defined with the Berry connections in the space of momentum and/or parameters govern the nonlinear responses. This topological view offers a route to designing nonlinear optical materials.

Semiconductor/High-Tc-Superconductor Hybrid ICs

NASA Technical Reports Server (NTRS)

Burns, Michael J.

1995-01-01

Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Li, Gongtan; Di Pietro, Riccardo; Huang, Jie; Noh, Yong-Young; Liu, Xuying; Minari, Takeo

2017-09-01

Very high values of carrier mobility have been recently reported in newly developed materials for field-effect transistors (FETs) or thin-film transistors (TFTs). However, there is an increasing concern of whether the values are overestimated. In this paper, we investigate how much contact resistance a FET or TFT can tolerate to allow the conventional current-voltage equations, which is derived for no contact resistance. We contend that mobility in transistors with resistive contact can be underestimated with the presence of the injection barrier, whereas mobility in transistors with gated Schottky contact can be overestimated by more than 10 times. The latter phenomenon occurs even in long-channel devices, and it becomes more severe when using low-k dielectrics. This is because the band bending and injection barrier experience a complicated evolution on account of electrostatic doping in the semiconducting layer; thus, they do not follow a capacitance approximation. When the band bending is weak, the accumulation is as weak as that in the subthreshold regime. Accordingly, the carrier concentration nonlinearly increases with the gate field. This mechanism can occur with or without exhibiting the "kink" feature in the transfer curves, which has been suggested as the signature of overestimation. For precision, carrier mobility should be presented against gate voltage and should be examined by other recommended extraction methods.

Nonlinear coherent structures in granular crystals

NASA Astrophysics Data System (ADS)

Chong, C.; Porter, Mason A.; Kevrekidis, P. G.; Daraio, C.

2017-10-01

The study of granular crystals, which are nonlinear metamaterials that consist of closely packed arrays of particles that interact elastically, is a vibrant area of research that combines ideas from disciplines such as materials science, nonlinear dynamics, and condensed-matter physics. Granular crystals exploit geometrical nonlinearities in their constitutive microstructure to produce properties (such as tunability and energy localization) that are not conventional to engineering materials and linear devices. In this topical review, we focus on recent experimental, computational, and theoretical results on nonlinear coherent structures in granular crystals. Such structures—which include traveling solitary waves, dispersive shock waves, and discrete breathers—have fascinating dynamics, including a diversity of both transient features and robust, long-lived patterns that emerge from broad classes of initial data. In our review, we primarily discuss phenomena in one-dimensional crystals, as most research to date has focused on such scenarios, but we also present some extensions to two-dimensional settings. Throughout the review, we highlight open problems and discuss a variety of potential engineering applications that arise from the rich dynamic response of granular crystals.

Effect of Charge Localization on the Effective Hyperfine Interaction in Organic Semiconducting Polymers

NASA Astrophysics Data System (ADS)

Geng, Rugang; Subedi, Ram C.; Luong, Hoang M.; Pham, Minh T.; Huang, Weichuan; Li, Xiaoguang; Hong, Kunlun; Shao, Ming; Xiao, Kai; Hornak, Lawrence A.; Nguyen, Tho D.

2018-02-01

Hyperfine interaction (HFI), originating from the coupling between spins of charge carriers and nuclei, has been demonstrated to strongly influence the spin dynamics of localized charges in organic semiconductors. Nevertheless, the role of charge localization on the HFI strength in organic thin films has not yet been experimentally investigated. In this study, the statistical relation hypothesis that the effective HFI of holes in regioregular poly(3-hexylthiophene) (P3HT) is proportional to 1 /N0.5 has been examined, where N is the number of the random nuclear spins within the envelope of the hole wave function. First, by studying magnetoconductance in hole-only devices made by isotope-labeled P3HT we verify that HFI is indeed the dominant spin interaction in P3HT. Second, assuming that holes delocalize fully over the P3HT polycrystalline domain, the strength of HFI is experimentally demonstrated to be proportional to 1 /N0.52 in excellent agreement with the statistical relation. Third, the HFI of electrons in P3HT is about 3 times stronger than that of holes due to the stronger localization of the electrons. Finally, the effective HFI in organic light emitting diodes is found to be a superposition of effective electron and hole HFI. Such a statistical relation may be generally applied to other semiconducting polymers. This Letter may provide great benefits for organic optoelectronics, chemical reaction kinetics, and magnetoreception in biology.

Effect of Charge Localization on the Effective Hyperfine Interaction in Organic Semiconducting Polymers.

PubMed

Geng, Rugang; Subedi, Ram C; Luong, Hoang M; Pham, Minh T; Huang, Weichuan; Li, Xiaoguang; Hong, Kunlun; Shao, Ming; Xiao, Kai; Hornak, Lawrence A; Nguyen, Tho D

2018-02-23

Hyperfine interaction (HFI), originating from the coupling between spins of charge carriers and nuclei, has been demonstrated to strongly influence the spin dynamics of localized charges in organic semiconductors. Nevertheless, the role of charge localization on the HFI strength in organic thin films has not yet been experimentally investigated. In this study, the statistical relation hypothesis that the effective HFI of holes in regioregular poly(3-hexylthiophene) (P3HT) is proportional to 1/N^{0.5} has been examined, where N is the number of the random nuclear spins within the envelope of the hole wave function. First, by studying magnetoconductance in hole-only devices made by isotope-labeled P3HT we verify that HFI is indeed the dominant spin interaction in P3HT. Second, assuming that holes delocalize fully over the P3HT polycrystalline domain, the strength of HFI is experimentally demonstrated to be proportional to 1/N^{0.52} in excellent agreement with the statistical relation. Third, the HFI of electrons in P3HT is about 3 times stronger than that of holes due to the stronger localization of the electrons. Finally, the effective HFI in organic light emitting diodes is found to be a superposition of effective electron and hole HFI. Such a statistical relation may be generally applied to other semiconducting polymers. This Letter may provide great benefits for organic optoelectronics, chemical reaction kinetics, and magnetoreception in biology.

Parametric model of servo-hydraulic actuator coupled with a nonlinear system: Experimental validation

NASA Astrophysics Data System (ADS)

Maghareh, Amin; Silva, Christian E.; Dyke, Shirley J.

2018-05-01

Hydraulic actuators play a key role in experimental structural dynamics. In a previous study, a physics-based model for a servo-hydraulic actuator coupled with a nonlinear physical system was developed. Later, this dynamical model was transformed into controllable canonical form for position tracking control purposes. For this study, a nonlinear device is designed and fabricated to exhibit various nonlinear force-displacement profiles depending on the initial condition and the type of materials used as replaceable coupons. Using this nonlinear system, the controllable canonical dynamical model is experimentally validated for a servo-hydraulic actuator coupled with a nonlinear physical system.

Nanoscale semiconducting silicon as a nutritional food additive

NASA Astrophysics Data System (ADS)

Canham, L. T.

2007-05-01

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

Understanding the role of nonlinearities in the transduction of vibratory energy harvesters

NASA Astrophysics Data System (ADS)

Masana, Ravindra Shiva Charan

The last two decades have witnessed several advances in micro-fabrication technologies and electronics, leading to the development of small, low-power devices for wireless sensing, data transmission, actuation, and medical implants. Unfortunately, the actual implementation of such devices in their respective environment has been hindered by the lack of scalable energy sources that are necessary to power and maintain them. Batteries, which remain the most commonly used power source, have not kept pace with the demands of these devices, especially in terms of energy density. In light of this challenge, the concept of vibratory energy harvesting has flourished in recent years as a possible alternative to power and maintain low-power electronics. While linear vibratory energy harvesters have received the majority of the literature's attention, a significant body of the current research activity is focused on the concept of purposeful inclusion of nonlinearities for broadband transduction. When compared to their linear resonant counterparts, nonlinear energy harvesters have a wider steady-state frequency bandwidth, leading to the common belief that they can be utilized to improve performance especially in random and non-stationary vibratory environments. This dissertation aims to critically investigate this belief by drawing a clearer picture of the role of nonlinearities in the transduction of energy harvesters and by defining the conditions under which nonlinearities can be used to enhance performance. To achieve this goal, the Thesis is divided into three parts. The first part investigates the performance of mono- and bi-stable energy harvesters under harmonic excitations and carries a detailed analysis of their relative performance. The second part investigates their response to broadband and narrowband random excitations and again analyzes their relative behavior. The third part exploits the super-harmonic resonance bands of bi-stable energy harvesters for the

Efficient nonlinear metasurface based on nonplanar plasmonic nanocavities

DOE PAGES

Wang, Feng; Martinson, Alex B. F.; Harutyunyan, Hayk

2017-04-03

Since their discovery in the 1960s, nonlinear optical effects have revolutionized optical technologies and laser industry. Development of efficient nanoscale nonlinear sources will pave the way for new applications in photonic circuitry, quantum optics and biosensing. However, nonlinear signal generation at dimensions smaller than the wavelength of light brings new challenges. The fundamental difficulty of designing an efficient nonlinear source is that some of the contributing factors involved in nonlinear wave-mixing at the nanoscale are often hard to satisfy simultaneously. Here, we overcome these limitations by developing a new type of nonplanar plasmonic metasurfaces, which can greatly enhance the secondmore » harmonic generation (SHG) at visible frequencies and achieve conversion efficiency of ~6 × 10 -5 at a peak pump intensity of ~0.5 GW/cm 2. This is 4-5 orders of magnitude larger than the efficiencies observed for nonlinear thin films and doubly resonant plasmonic antennas. The proposed metasurface consists of an array of metal-dielectric-metal (MDM) nanocavities formed by conformally cross-linked nanowires separated by an ultrathin nonlinear material layer. The nonplanar MDM geometry minimizes the destructive interference of nonlinear emission into the far-field, provides strongly enhanced independently tunable resonances both for fundamental and harmonic frequencies, a good mutual overlap of the modes and a strong interaction with the nonlinear spacer. Lastly, our findings enable the development of efficient nanoscale single photon sources, integrated frequency converters, and other nonlinear devices.« less

A semiconducting microporous framework of Cd6Ag4(SPh)16 clusters interlinked using rigid and conjugated bipyridines.

PubMed

Xu, Chao; Hedin, Niklas; Shi, Hua-Tian; Zhang, Qian-Feng

2014-04-11

Ternary supertetrahedral chalcogenolate clusters were interlinked with bipyridines into a microporous semiconducting framework with properties qualitatively different from those of the original clusters. Both the framework and the clusters were effective photocatalysts, and rapidly degraded the dye rhodamine B.

Tunable optical limiting optofluidic device filled with graphene oxide dispersion in ethanol

PubMed Central

Fang, Chaolong; Dai, Bo; Hong, Ruijin; Tao, Chunxian; Wang, Qi; Wang, Xu; Zhang, Dawei; Zhuang, Songlin

2015-01-01

An optofluidic device with tunable optical limiting property is proposed and demonstrated. The optofluidic device is designed for adjusting the concentration of graphene oxide (GO) in the ethanol solution and fabricated by photolithography technique. By controlling the flow rate ratio of the injection, the concentration of GO can be precisely adjusted so that the optical nonlinearity can be changed. The nonlinear optical properties and dynamic excitation relaxation of the GO/ethanol solution are investigated by using Z-scan and pump-probe measurements in the femtosecond regime within the 1.5 μm telecom band. The GO/ethanol solution presents ultrafast recovery time. Besides, the optical limiting property is in proportion to the concentration of the solution. Thus, the threshold power and the saturated power of the optical limiting property can be simply and efficiently manipulated by controlling the flow rate ratio of the injection. Furthermore, the amplitude regeneration is demonstrated by employing the proposed optofluidic device. The signal quality of intensity-impaired femtosecond pulse is significantly improved. The optofluidic device is compact and has long interaction length of optical field and nonlinear material. Heat can be dissipated in the solution and nonlinear material is isolated from other optical components, efficiently avoiding thermal damage and mechanical damage. PMID:26477662

Fringe projection profilometry with portable consumer devices

NASA Astrophysics Data System (ADS)

Liu, Danji; Pan, Zhipeng; Wu, Yuxiang; Yue, Huimin

2018-01-01

A fringe projection profilometry (FPP) using portable consumer devices is attractive because it can realize optical three dimensional (3D) measurement for ordinary consumers in their daily lives. We demonstrate a FPP using a camera in a smart mobile phone and a digital consumer mini projector. In our experiment of testing the smart phone (iphone7) camera performance, the rare-facing camera in the iphone7 causes the FPP to have a fringe contrast ratio of 0.546, nonlinear carrier phase aberration value of 0.6 rad, and nonlinear phase error of 0.08 rad and RMS random phase error of 0.033 rad. In contrast, the FPP using the industrial camera has a fringe contrast ratio of 0.715, nonlinear carrier phase aberration value of 0.5 rad, nonlinear phase error of 0.05 rad and RMS random phase error of 0.011 rad. Good performance is achieved by using the FPP composed of an iphone7 and a mini projector. 3D information of a facemask with a size for an adult is also measured by using the FPP that uses portable consumer devices. After the system calibration, the 3D absolute information of the facemask is obtained. The measured results are in good agreement with the ones that are carried out in a traditional way. Our results show that it is possible to use portable consumer devices to construct a good FPP, which is useful for ordinary people to get 3D information in their daily lives.

Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

NASA Astrophysics Data System (ADS)

Chinone, N.; Yamasue, K.; Hiranaga, Y.; Honda, K.; Cho, Y.

2012-11-01

Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.

Guest-host polymer fibers for nonlinear optics

NASA Astrophysics Data System (ADS)

Kuzyk, M. G.; Paek, U. C.; Dirk, C. W.

1991-08-01

We report on the fabrication of poly(methyl methacrylate) (PMMA) nonlinear optical fibers with dye-doped cores. The dye-doped cores have an elevated refractive index that defines a waveguiding region with a large third-order susceptibility and with single-mode dimensions. The measured third-order susceptibility of a squarylium-doped PMMA film material and the measured optical loss of the dye-doped fiber core results in a figure of merit that is suitable for all-optical device applications at λ=1.3 μm. The impact of further improvements in PMMA loss and chromophore nonlinearity are also discussed.

Theoretical, Experimental and Numerical Studies on Hybrid Acoustooptic Bistable Devices

DTIC Science & Technology

1991-06-01

the nonlinear Fabri - Perot etalon, the linear/nonlinear interface and multiple quantum well semiconductor devices. In what follows, I will first...done in connection with absorptive and dispersive optical bistability in a nonlinear Fabri - Perot 3 etalon (for an excellent analysis, see ref. (3...While the first effect is observed when the operating frequency is close to the resonant frequency of the atoms constituting the Fabri - Perot , dispersive

Nonlinear compression of temporal solitons in an optical waveguide via inverse engineering

NASA Astrophysics Data System (ADS)

Paul, Koushik; Sarma, Amarendra K.

2018-03-01

We propose a novel method based on the so-called shortcut-to-adiabatic passage techniques to achieve fast compression of temporal solitons in a nonlinear waveguide. We demonstrate that soliton compression could be achieved, in principle, at an arbitrarily small distance by inverse-engineering the pulse width and the nonlinearity of the medium. The proposed scheme could possibly be exploited for various short-distance communication protocols and may be even in nonlinear guided wave-optics devices and generation of ultrashort soliton pulses.

Dynamics of a movable micromirror in a nonlinear optical cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Tarun; ManMohan; Bhattacherjee, Aranya B.

We consider the dynamics of a movable mirror (cantilever) of a nonlinear optical cavity. We show that a chi{sup (3)} medium with a strong Kerr nonlinearity placed inside a cavity inhibits the normal mode splitting (NMS) due to the photon blockade mechanism. This study demonstrates that the displacement spectrum of the micromirror could be used as a tool to detect the photon blockade effect. Moreover the ability to control the photon number fluctuation by tuning the Kerr nonlinearity emerges as a new handle to coherently control the dynamics of the micromirror, which further could be useful in the realization ofmore » tuneable quantum-mechanical devices. We also found that the temperature of the micromechanical mirror increases with increasing Kerr nonlinearity.« less

Anatomy of Ag/Hafnia-Based Selectors with 10 10 Nonlinearity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Midya, Rivu; Wang, Zhongrui; Zhang, Jiaming

We developed a novel Ag/oxide-based threshold switching device with attractive features including ≈10 10 nonlinearity. Furthermore, in a high-resolution transmission electron microscopic analysis of the nanoscale crosspoint device it is suggested that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off, is responsible for the observed threshold switching.

Anatomy of Ag/Hafnia-Based Selectors with 10 10 Nonlinearity

DOE PAGES

Midya, Rivu; Wang, Zhongrui; Zhang, Jiaming; ...

2017-01-30

We developed a novel Ag/oxide-based threshold switching device with attractive features including ≈10 10 nonlinearity. Furthermore, in a high-resolution transmission electron microscopic analysis of the nanoscale crosspoint device it is suggested that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off, is responsible for the observed threshold switching.

Efficient, nonlinear phase estimation with the nonmodulated pyramid wavefront sensor

NASA Astrophysics Data System (ADS)

Frazin, Richard A.

2018-04-01

The sensitivity of the the pyramid wavefront sensor (PyWFS) has made it a popular choice for astronomical adaptive optics (AAO) systems, and it is at its most sensitive when it is used without modulation of the input beam. In non-modulated mode, the device is highly nonlinear. Hence, all PyWFS implementations on current AAO systems employ modulation to make the device more linear. The upcoming era of 30-m class telescopes and the demand for ultra-precise wavefront control stemming from science objectives that include direct imaging of exoplanets make using the PyWFS without modulation desirable. This article argues that nonlinear estimation based on Newton's method for nonlinear optimization can be useful for mitigating the effects of nonlinearity in the non-modulated PyWFS. The proposed approach requires all optical modeling to be pre-computed, which has the advantage of avoiding real-time simulations of beam propagation. Further, the required real-time calculations are amenable to massively parallel computation. Numerical experiments simulate a currently operational PyWFS. A singular value analysis shows that the common practice of calculating two "slope" images from the four PyWFS pupil images discards critical information and is unsuitable for the non-modulated PyWFS simulated here. Instead, this article advocates estimators that use the raw pixel values not only from the four geometrical images of the pupil, but from surrounding pixels as well. The simulations indicate that nonlinear estimation can be effective when the Strehl ratio of the input beam is greater than 0.3, and the improvement relative to linear estimation tends to increase at larger Strehl ratios. At Strehl ratios less than about 0.5, the performances of both the nonlinear and linear estimators are relatively insensitive to noise, since they are dominated by nonlinearity error.

Nanoscale Kerr Nonlinearity Enhancement Using Spontaneously Generated Coherence in Plasmonic Nanocavity

PubMed Central

Chen, Hongyi; Ren, Juanjuan; Gu, Ying; Zhao, Dongxing; Zhang, Junxiang; Gong, Qihuang

2015-01-01

The enhancement of the optical nonlinear effects at nanoscale is important in the on-chip optical information processing. We theoretically propose the mechanism of the great Kerr nonlinearity enhancement by using anisotropic Purcell factors in a double-Λ type four-level system, i.e., if the bisector of the two vertical dipole moments lies in the small/large Purcell factor axis in the space, the Kerr nonlinearity will be enhanced/decreased due to the spontaneously generated coherence accordingly. Besides, when the two dipole moments are parallel, the extremely large Kerr nonlinearity increase appears, which comes from the double population trapping. Using the custom-designed resonant plasmonic nanostructure which gives an anisotropic Purcell factor environment, we demonstrate the effective nanoscale control of the Kerr nonlinearity. Such controllable Kerr nonlinearity may be realized by the state-of-the-art nanotechnics and it may have potential applications in on-chip photonic nonlinear devices. PMID:26670939

Third order nonlinear optical response exhibited by mono- and few-layers of WS 2

DOE PAGES

Torres-Torres, Carlos; Perea-López, Néstor; Elías, Ana Laura; ...

2016-04-13

In this work, strong third order nonlinear optical properties exhibited by WS 2 layers are presented. Optical Kerr effect was identified as the dominant physical mechanism responsible for these third order optical nonlinearities. An extraordinary nonlinear refractive index together with an important contribution of a saturated absorptive response was observed to depend on the atomic layer stacking. Comparative experiments performed in mono- and few-layer samples of WS 2 revealed that this material is potentially capable of modulating nonlinear optical processes by selective near resonant induced birefringence. In conclusion, we envision applications for developing all-optical bidimensional nonlinear optical devices.

Majorana quasiparticles in semiconducting carbon nanotubes

NASA Astrophysics Data System (ADS)

Marganska, Magdalena; Milz, Lars; Izumida, Wataru; Strunk, Christoph; Grifoni, Milena

2018-02-01

Engineering effective p -wave superconductors hosting Majorana quasiparticles (MQPs) is nowadays of particular interest, also in view of the possible utilization of MQPs in fault-tolerant topological quantum computation. In quasi-one-dimensional systems, the parameter space for topological superconductivity is significantly reduced by the coupling between transverse modes. Together with the requirement of achieving the topological phase under experimentally feasible conditions, this strongly restricts in practice the choice of systems which can host MQPs. Here, we demonstrate that semiconducting carbon nanotubes (CNTs) in proximity with ultrathin s -wave superconductors, e.g., exfoliated NbSe2, satisfy these needs. By precise numerical tight-binding calculations in the real space, we show the emergence of localized zero-energy states at the CNT ends above a critical value of the applied magnetic field, of which we show the spatial evolution. Knowing the microscopic wave functions, we unequivocally demonstrate the Majorana nature of the localized states. An effective four-band model in the k -space, with parameters determined from the numerical spectrum, is used to calculate the topological phase diagram and its phase boundaries in analytic form. Finally, the impact of symmetry breaking contributions, like disorder and an axial component of the magnetic field, is investigated.

Study of nonlinear refraction of organic dye by Z-scan technique using He-Ne laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medhekar, S.; Kumar, R.; Mukherjee, S.

2013-02-05

Laser induced third-order nonlinear optical responses of Brilliant Green solution has been investigated by utilizing single beam Z-scan technique with a continuous-wave He-Ne laser radiation at 632.8 nm. It was observed that the material exhibits self-defocusing type optical nonlinearity. The measurements of nonlinear refraction were carried out at different dye concentrations and found that the increase in solution concentration leads to the linear increase of the nonlinear refractive index. The experimental results confirm great potential of the Brilliant Green for the application in nonlinear optical devices.

Correlation between piezoresponse nonlinearity and hysteresis in ferroelectric crystals at nanoscale

DOE PAGES

Kalinin, Sergei V.; Jesse, Stephen; Yang, Yaodong; ...

2016-04-27

Here, the nonlinear response of a ferroic to external fields has been studied for decades, garnering interest for both understanding fundamental physics, as well as technological applications such as memory devices. Yet, the behavior of ferroelectrics at mesoscopic regimes remains poorly understood, and the scale limits of theories developed for macroscopic regimes are not well tested experimentally. Here, we test the link between piezo-nonlinearity and local piezoelectric strain hysteresis, via AC-field dependent measurements in conjunction with first order reversal curve (FORC) measurements on (K,Na)NbO 3 crystals with band-excitation piezoelectric force microscopy. The correlation coefficient between nonlinearity amplitude and the FORCmore » of the polarization switching shows a clear decrease in correlation with increasing AC bias, suggesting the impact of domain wall clamping on the DC measurement case. Further, correlation of polynomial fitting terms from the nonlinear measurements with the hysteresis loop area reveals that the largest correlations are reserved for the quadratic terms, which is expected for irreversible domain wall motion contributions that impact both piezoelectric behavior as well as minor loop formation. These confirm the link between local piezoelectric nonlinearity, domain wall motion and minor loop formation, and suggest that existing theories (such as Preisach) are applicable at these length scales, with associated implications for future nanoscale devices.« less

Switch device having a non-linear transmission line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.

Switching devices are provided. The switching devices include an input electrode, having a main electrode and a trigger electrode, and an output electrode. The main electrode and the trigger electrode are separated from the output electrode by a main gap and a trigger gap, respectively. During operation, the trigger electrode compresses and amplifies a trigger voltage signal causing the trigger electrode to emit a pulse of energy. This pulse of energy form plasma near the trigger electrode, either by arcing across the trigger gap, or by arcing from the trigger electrode to the main electrode. This plasma decreases the breakdownmore » voltage of the main gap. Simultaneously, or near simultaneously, a main voltage signal propagates through the main electrode. The main voltage signal emits a main pulse of energy that arcs across the main gap while the plasma formed by the trigger pulse is still present.« less

A sub-cc nonlinear piezoelectric energy harvester for powering leadless pacemakers

PubMed Central

Ansari, MH; Karami, M Amin

2018-01-01

A miniature nonlinear piezoelectric energy harvester is developed to power state of the art leadless cardiac pacemakers from cardiac motions. The energy harvester is integrated in the leadless pacemaker and is connected to the myocardium. The energy harvester converts myocardial motions to electricity to power leadless pacemakers. The energy is stored in a battery or supercapacitor and is used for pacing. The device is composed of a bimorph piezoelectric beam confined in a gray iron frame. The system is assembled at high temperature and operated at the body temperature. The mismatch in the coefficients of thermal expansion of the beam and the frame causes the beam to buckle in body temperature. This intentional buckling makes the beam unstable and improves the power production and robustness of the device. Having high natural frequency is a major problem in microelectromechanical systems energy harvesters. Considering the small size of the energy harvester, 0.5 cm3, the natural frequency is expected to be high. In our design, the natural frequency is lowered significantly using a buckled beam and a proof mass. Since the beam is buckled, the design is bistable and nonlinear, which could increase the output power. In this article, the device is analytically modeled, and the natural frequencies and mode shapes of the energy harvester are analytically derived. The terms corresponding to geometric nonlinearities are included in the electromechanical coupled governing equations. The simulations show that the device generates sufficient electricity to power leadless pacemakers. PMID:29674842

Quantum Nonlinear Optics without real Photons

NASA Astrophysics Data System (ADS)

Macrí, Vincenzo; Frisk Kockum, Anton; Stassi, Roberto; di Stefano, Omar; Savasta, Salvatore; Nori, Franco

We propose a physical process analogous to spontaneous parametric down-conversion, where one excited atom directly transfers its excitation to a couple of spatially-separated atoms with probability approaching one. The interaction is mediated by the exchange of virtual, rather than real, photons. This nonlinear optical process is coherent and reversible, so that the two excited atoms can transfer back the excitation to the first one: the atomic analogue of sum-frequency generation. The parameters used here correspond to experimentally-demonstrated values in circuit QED. This approach can be extended to consider other nonlinear interatomic processes, e.g. four-qubit mixing, and is an attractive architecture for the realization of quantum devices on a chip. Univ. of Michigan, USA.

Design principles for HgTe based topological insulator devices

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Povolotskyi, Michael; Klimeck, Gerhard

2013-07-01

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical well width dimension. It is shown that if the barrier (CdTe) and well-region (HgTe) are altered by replacing them with the alloy CdxHg1-xTe of various stoichiometries, the critical width can be changed. The critical quantum well width is shown to depend on temperature, applied stress, growth directions, and external electric fields. Based on these results, a novel device concept is proposed that allows to switch between a normal semiconducting and topological insulator state through application of moderate external electric fields.

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

PubMed Central

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-01-01

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials. PMID:26202946

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

PubMed

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-07-23

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

Ultrafast frequency-agile terahertz devices using methylammonium lead halide perovskites.

PubMed

Chanana, Ashish; Liu, Xiaojie; Zhang, Chuang; Vardeny, Zeev Valy; Nahata, Ajay

2018-05-01

The ability to control the response of metamaterial structures can facilitate the development of new terahertz devices, with applications in spectroscopy and communications. We demonstrate ultrafast frequency-agile terahertz metamaterial devices that enable such a capability, in which multiple perovskites can be patterned in each unit cell with micrometer-scale precision. To accomplish this, we developed a fabrication technique that shields already deposited perovskites from organic solvents, allowing for multiple perovskites to be patterned in close proximity. By doing so, we demonstrate tuning of the terahertz resonant response that is based not only on the optical pump fluence but also on the optical wavelength. Because polycrystalline perovskites have subnanosecond photocarrier recombination lifetimes, switching between resonances can occur on an ultrafast time scale. The use of multiple perovskites allows for new functionalities that are not possible using a single semiconducting material. For example, by patterning one perovskite in the gaps of split-ring resonators and bringing a uniform thin film of a second perovskite in close proximity, we demonstrate tuning of the resonant response using one optical wavelength and suppression of the resonance using a different optical wavelength. This general approach offers new capabilities for creating tunable terahertz devices.

Nonlinear simulation of the fishbone instability

NASA Astrophysics Data System (ADS)

Idouakass, Malik; Faganello, Matteo; Berk, Herbert; Garbet, Xavier; Benkadda, Sadruddin; PIIM Team; IFS Team; IRFM Team

2014-10-01

We propose to extend the Odblom-Breizman precessional fishbone model to account for both the MagnetoHydroDynamic (MHD) nonlinearity at the q = 1 surface and the nonlinear response of the energetic particles contained within the q = 1 surface. This electromagnetic mode, whose excitation, damping and frequency chirping are determined by the self-consistent interaction between an energetic trapped particle population and the bulk plasma evolution, can induce effective transport and losses for the energetic particles, being them alpha-particles in next-future fusion devices or heated particles in present Tokamaks. The model is reduced to its simplest form, assuming a reduced MHD description for the bulk plasma and a two-dimensional phase-space evolution (gyro and bounce averaged) for deeply trapped energetic particles. Numerical simulations have been performed in order to characterize the mode chirping and saturation, in particular looking at the interplay between the development of phase-space structures and the system dissipation associated to the MHD non-linearities at the resonance locations.

Voltage-Induced Nonlinear Conduction Properties of Epoxy Resin/Micron-Silver Particles Composites

NASA Astrophysics Data System (ADS)

Qu, Zhaoming; Lu, Pin; Yuan, Yang; Wang, Qingguo

2018-01-01

The nonlinear conduction properties of epoxy resin (ER)/micron-silver particles (MP) composites were investigated. Under sufficient high intensity applied constant voltage, the obvious nonlinear conduction properties of the samples with volume fraction 25% were found. With increments in the voltage, the conductive switching effect was observed. The nonlinear conduction mechanism of the ER/MP composites under high applied voltages could be attributed to the electrical current conducted via discrete paths of conductive particles induced by the electric field. The test results show that the ER/MP composites with nonlinear conduction properties are of great potential application in electromagnetic protection of electron devices and systems.

Nonlinear Dynamics and Heterogeneous Interacting Agents

NASA Astrophysics Data System (ADS)

Lux, Thomas; Reitz, Stefan; Samanidou, Eleni

Economic application of nonlinear dynamics, microscopic agent-based modelling, and the use of artificial intelligence techniques as learning devices of boundedly rational actors are among the most exciting interdisciplinary ventures of economic theory over the past decade. This volume provides us with a most fascinating series of examples on "complexity in action" exemplifying the scope and explanatory power of these innovative approaches.

All-optical universal logic gates on nonlinear multimode interference coupler using tunable input intensity

NASA Astrophysics Data System (ADS)

Tajaldini, Mehdi; Jafri, Mohd Zubir Mat

2015-04-01

The theory of Nonlinear Modal Propagation Analysis Method (NMPA) have shown significant features of nonlinear multimode interference (MMI) coupler with compact dimension and when launched near the threshold of nonlinearity. Moreover, NMPA have the potential to allow studying the nonlinear MMI based the modal interference to explorer the phenomenon that what happen due to the natural of multimode region. Proposal of all-optical switch based NMPA has approved its capability to achieving the all-optical gates. All-optical gates have attracted increasing attention due to their practical utility in all-optical signal processing networks and systems. Nonlinear multimode interference devices could apply as universal all-optical gates due to significant features that NMPA introduce them. In this Paper, we present a novel Ultra-compact MMI coupler based on NMPA method in low intensity compared to last reports either as a novel design method and potential application for optical NAND, NOR as universal gates on single structure for Boolean logic signal processing devices and optimize their application via studding the contrast ratio between ON and OFF as a function of output width. We have applied NMPA for several applications so that the miniaturization in low nonlinear intensities is their main purpose.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

NASA Astrophysics Data System (ADS)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

NASA Technical Reports Server (NTRS)

Adams, Michael J. (Editor)

1987-01-01

The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer

NASA Astrophysics Data System (ADS)

Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Eon Park, Chan; Raj, Rishi; Lee, Tae-Woo

2017-06-01

To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.

Polydiacetylene thin films for nonlinear optical applications

NASA Technical Reports Server (NTRS)

Paley, Mark S.

1993-01-01

One very promising class of organic compounds for nonlinear optical (NLO) applications are polydiacetylenes, which are novel in that they are highly conjugated polymers which can also be crystalline. Polydiacetylenes offer several advantages over other organic materials: because of their highly conjugated electronic structures, they are capable of possessing large optical nonlinearities with fast response times; because they are crystalline, they can be highly ordered, which is essential for optimizing their NLO properties; and, last, because they are polymeric, they can be formed as thin films, which are useful for device fabrication. We have actively been carrying out ground-based research on several compounds of interest.

Magneto-optical absorption in semiconducting spherical quantum dots: Influence of the dot-size, confining potential, and magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kushwaha, Manvir S.

2014-12-15

Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorptionmore » in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level

Third-order nonlinear optical properties of organic azo dyes by using strength of nonlinearity parameter and Z-scan technique

NASA Astrophysics Data System (ADS)

Motiei, H.; Jafari, A.; Naderali, R.

2017-02-01

In this paper, two chemically synthesized organic azo dyes, 2-(2,5-Dichloro-phenyazo)-5,5-dimethyl-cyclohexane-1,3-dione (azo dye (i)) and 5,5-Dimethyl-2-tolylazo-cyclohexane-1,3-dione (azo dye (ii)), have been studied from optical Kerr nonlinearity point of view. These materials were characterized by Ultraviolet-visible spectroscopy. Experiments were performed using a continous wave diode-pumped laser at 532 nm wavelength in three intensities of the laser beam. Nonlinear absorption (β), refractive index (n2) and third-order susceptibility (χ (3)) of dyes, were calculated. Nonlinear absorption coefficient of dyes have been calculated from two methods; 1) using theoretical fits and experimental data in the Z-scan technique, 2) using the strength of nonlinearity curves. The values of β obtained from both of the methods were approximately the same. The results demonstrated that azo dye (ii) displays better nonlinearity and has a lower two-photon absorption threshold than azo dye (i). Calculated parameter related to strength of nonlinearity for azo dye (ii) was higher than azo dye (i), It may be due to presence of methyl in azo dye (ii) instead of chlorine in azo dye (i). Furthermore, The measured values of third order susceptibility of azo dyes were from the order of 10-9 esu . These azo dyes can be suitable candidate for optical switching devices.

Robust fully-compensated ferrimagnetism and semiconductivity in inverse Heusler compounds: Ti2VZ (Z = P, As, Sb, Bi)

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Liu, Z. H.; Liu, G. D.; Ma, X. Q.; Cheng, Z. X.

2018-03-01

Compensated ferrimagnets, due to their zero net magnetization and potential for large spin-polarization, have been attracting more and more attention in the field of spintronics. We demonstrate potential candidate materials among the inverse Heusler compounds Ti2VZ (Z = P, As, Sb, Bi) by first principles calculations. It is found that these compounds with 18 valence electrons per unit cell have zero net magnetic moment with compensated sublattice magnetization, as anticipated by a variant of Slater-Pauling rule of Mt = NV - 18, where Mt is the total spin magnetic moment per formula unit and NV is the number of valence electrons per formula unit, and show semiconducting behavior in both spin channels with a moderate exchange splitting, as with ordinary ferromagnetic semiconductors. Furthermore, the fully compensated ferrimagnetism and semiconductivity are rather robust over a wide range of lattice contraction and expansion. Due to the above distinct advantages, these compounds will be promising candidates for spintronic applications.

An extended harmonic balance method based on incremental nonlinear control parameters

NASA Astrophysics Data System (ADS)

Khodaparast, Hamed Haddad; Madinei, Hadi; Friswell, Michael I.; Adhikari, Sondipon; Coggon, Simon; Cooper, Jonathan E.

2017-02-01

A new formulation for calculating the steady-state responses of multiple-degree-of-freedom (MDOF) non-linear dynamic systems due to harmonic excitation is developed. This is aimed at solving multi-dimensional nonlinear systems using linear equations. Nonlinearity is parameterised by a set of 'non-linear control parameters' such that the dynamic system is effectively linear for zero values of these parameters and nonlinearity increases with increasing values of these parameters. Two sets of linear equations which are formed from a first-order truncated Taylor series expansion are developed. The first set of linear equations provides the summation of sensitivities of linear system responses with respect to non-linear control parameters and the second set are recursive equations that use the previous responses to update the sensitivities. The obtained sensitivities of steady-state responses are then used to calculate the steady state responses of non-linear dynamic systems in an iterative process. The application and verification of the method are illustrated using a non-linear Micro-Electro-Mechanical System (MEMS) subject to a base harmonic excitation. The non-linear control parameters in these examples are the DC voltages that are applied to the electrodes of the MEMS devices.

Third order nonlinearity in pulsed laser deposited LiNbO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal, E-mail: kcjrsp@uohyd.ernet.in, E-mail: svrsp@uohyd.ernet.in

2016-05-06

Lithium niobate (LiNbO{sub 3}) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

A circuit model for nonlinear simulation of radio-frequency filters using bulk acoustic wave resonators.

PubMed

Ueda, Masanori; Iwaki, Masafumi; Nishihara, Tokihiro; Satoh, Yoshio; Hashimoto, Ken-ya

2008-04-01

This paper describes a circuit model for the analysis of nonlinearity in the filters based on radiofrequency (RF) bulk acoustic wave (BAW) resonators. The nonlinear output is expressed by a current source connected parallel to the linear resonator. Amplitude of the nonlinear current source is programmed proportional to the product of linear currents flowing in the resonator. Thus, the nonlinear analysis is performed by the common linear analysis, even for complex device structures. The analysis is applied to a ladder-type RF BAW filter, and frequency dependence of the nonlinear output is discussed. Furthermore, this analysis is verified through comparison with experiments.

Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

PubMed

Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong

2015-05-26

Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material asmore » well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.« less

Residual mode correction in calibrating nonlinear damper for vibration control of flexible structures

NASA Astrophysics Data System (ADS)

Sun, Limin; Chen, Lin

2017-10-01

Residual mode correction is found crucial in calibrating linear resonant absorbers for flexible structures. The classic modal representation augmented with stiffness and inertia correction terms accounting for non-resonant modes improves the calibration accuracy and meanwhile avoids complex modal analysis of the full system. This paper explores the augmented modal representation in calibrating control devices with nonlinearity, by studying a taut cable attached with a general viscous damper and its Equivalent Dynamic Systems (EDSs), i.e. the augmented modal representations connected to the same damper. As nonlinearity is concerned, Frequency Response Functions (FRFs) of the EDSs are investigated in detail for parameter calibration, using the harmonic balance method in combination with numerical continuation. The FRFs of the EDSs and corresponding calibration results are then compared with those of the full system documented in the literature for varied structural modes, damper locations and nonlinearity. General agreement is found and in particular the EDS with both stiffness and inertia corrections (quasi-dynamic correction) performs best among available approximate methods. This indicates that the augmented modal representation although derived from linear cases is applicable to a relatively wide range of damper nonlinearity. Calibration of nonlinear devices by this means still requires numerical analysis while the efficiency is largely improved owing to the system order reduction.

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors.

PubMed

Kim, Min Je; Jung, A-Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon-Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung-Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong-Ho; Kim, BongSoo; Cho, Jeong Ho

2017-11-22

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10 7 . The highest hole mobility of 1.51 cm 2 V -1 s -1 and the highest electron mobility of 0.85 cm 2 V -1 s -1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

[C6 H14 N]PbBr3 : An ABX3 -Type Semiconducting Perovskite Hybrid with Above-Room-Temperature Phase Transition.

PubMed

Zhang, Jing; Liu, Xitao; Li, Xianfeng; Han, Shiguo; Tao, Kewen; Wang, Yuyin; Ji, Chengmin; Sun, Zhihua; Luo, Junhua

2018-04-16

Organic-inorganic hybrid perovskites, with the formula ABX 3 (A=organic cation, B=metal cation, and X=halide; for example, CH 3 NH 3 PbI 3 ), have diverse and intriguing physical properties, such as semiconduction, phase transitions, and optical properties. Herein, a new ABX 3 -type semiconducting perovskite-like hybrid, (hexamethyleneimine)PbBr 3 (1), consisting of one-dimensional inorganic frameworks and cyclic organic cations, is reported. Notably, the inorganic moiety of 1 adopts a perovskite-like architecture and forms infinite columns composed of face-sharing PbBr 6 octahedra. Strikingly, the organic cation exhibits a highly flexible molecular configuration, which triggers an above-room-temperature phase transition, at T c =338.8 K; this is confirmed by differential scanning calorimetry (DSC), specific heat capacity (C p ), and dielectric measurements. Further structural analysis reveals that the phase transition originates from the molecular configurational distortion of the organic cations coupled with small-angle reorientation of the PbBr 6 octahedra inside the inorganic components. Moreover, temperature-dependent conductivity and UV/Vis absorption measurements reveal that 1 also displays semiconducting behavior below T c . It is believed that this work will pave a potential way to design multifeatured perovskite hybrids by utilizing cyclic organic amines. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modelling of a bridge-shaped nonlinear piezoelectric energy harvester

NASA Astrophysics Data System (ADS)

Gafforelli, G.; Xu, R.; Corigliano, A.; Kim, S. G.

2013-12-01

Piezoelectric MicroElectroMechanical Systems (MEMS) energy harvesting is an attractive technology for harvesting small magnitudes of energy from ambient vibrations. Increasing the operating frequency bandwidth of such devices is one of the major issues for real world applications. A MEMS-scale doubly clamped nonlinear beam resonator is designed and developed to demonstrate very wide bandwidth and high power density. In this paper a first complete theoretical discussion of nonlinear resonating piezoelectric energy harvesting is provided. The sectional behaviour of the beam is studied through the Classical Lamination Theory (CLT) specifically modified to introduce the piezoelectric coupling and nonlinear Green-Lagrange strain tensor. A lumped parameter model is built through Rayleigh-Ritz Method and the resulting nonlinear coupled equations are solved in the frequency domain through the Harmonic Balance Method (HBM). Finally, the influence of external load resistance on the dynamic behaviour is studied. The theoretical model shows that nonlinear resonant harvesters have much wider power bandwidth than that of linear resonators but their maximum power is still bounded by the mechanical damping as is the case for linear resonating harvesters.

Method for forming low-resistance ohmic contacts on semiconducting oxides

DOEpatents

Narayan, J.

1979-10-01

The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Phenomenological modeling of nonlinear holograms based on metallic geometric metasurfaces.

PubMed

Ye, Weimin; Li, Xin; Liu, Juan; Zhang, Shuang

2016-10-31

Benefiting from efficient local phase and amplitude control at the subwavelength scale, metasurfaces offer a new platform for computer generated holography with high spatial resolution. Three-dimensional and high efficient holograms have been realized by metasurfaces constituted by subwavelength meta-atoms with spatially varying geometries or orientations. Metasurfaces have been recently extended to the nonlinear optical regime to generate holographic images in harmonic generation waves. Thus far, there has been no vector field simulation of nonlinear metasurface holograms because of the tremendous computational challenge in numerically calculating the collective nonlinear responses of the large number of different subwavelength meta-atoms in a hologram. Here, we propose a general phenomenological method to model nonlinear metasurface holograms based on the assumption that every meta-atom could be described by a localized nonlinear polarizability tensor. Applied to geometric nonlinear metasurfaces, we numerically model the holographic images formed by the second-harmonic waves of different spins. We show that, in contrast to the metasurface holograms operating in the linear optical regime, the wavelength of incident fundamental light should be slightly detuned from the fundamental resonant wavelength to optimize the efficiency and quality of nonlinear holographic images. The proposed modeling provides a general method to simulate nonlinear optical devices based on metallic metasurfaces.

Decrease and enhancement of third-order optical nonlinearity in metal-dielectric composite films

NASA Astrophysics Data System (ADS)

Ning, Tingyin; Lu, Heng; Zhou, Yueliang; Man, Baoyuan

2018-04-01

We investigate third-order optical nonlinearity in gold nanoparticles embedded in CaCu3Ti4O12 (CCTO) films using the Z-scan method. We observe that the effective third-order nonlinear optical susceptibilities in such composite films can not only be enhanced, in line with the conventional behavior, but also be decreased, depending on the volume concentration of gold. In particular, the nonlinear absorption behavior can be changed from saturable absorption in pure CCTO films to reversed saturable absorption in composite films, and theoretically, even zero nonlinear absorption could be obtained. These results indicate that it should be possible to tune the third-order optical nonlinearity in Au:CCTO composite films by altering the gold concentration, thus making them suitable for applications in photonic devices.

Sensorless Estimation and Nonlinear Control of a Rotational Energy Harvester

NASA Astrophysics Data System (ADS)

Nunna, Kameswarie; Toh, Tzern T.; Mitcheson, Paul D.; Astolfi, Alessandro

2013-12-01

It is important to perform sensorless monitoring of parameters in energy harvesting devices in order to determine the operating states of the system. However, physical measurements of these parameters is often a challenging task due to the unavailability of access points. This paper presents, as an example application, the design of a nonlinear observer and a nonlinear feedback controller for a rotational energy harvester. A dynamic model of a rotational energy harvester with its power electronic interface is derived and validated. This model is then used to design a nonlinear observer and a nonlinear feedback controller which yield a sensorless closed-loop system. The observer estimates the mechancial quantities from the measured electrical quantities while the control law sustains power generation across a range of source rotation speeds. The proposed scheme is assessed through simulations and experiments.

Anomalous nonlinear absorption in epsilon-near-zero materials: optical limiting and all-optical control.

PubMed

Vincenti, M A; de Ceglia, D; Scalora, Michael

2016-08-01

We investigate nonlinear absorption in films of epsilon-near-zero materials. The combination of large local electric fields at the fundamental frequency and material losses at the harmonic frequencies induce unusual intensity-dependent phenomena. We predict that the second-order nonlinearity of a low-damping, epsilon-near-zero slab produces an optical limiting effect that mimics a two-photon absorption process. Anomalous absorption profiles that depend on low permittivity values at the pump frequency are also predicted for third-order nonlinearities. These findings suggest new opportunities for all-optical light control and novel ways to design reconfigurable and tunable nonlinear devices.

Noise in nonlinear nanoelectromechanical resonators

NASA Astrophysics Data System (ADS)

Guerra Vidal, Diego N.

Nano-Electro-Mechanical Systems (NEMS), due to their nanometer scale size, possess a number of desirable attributes: high sensitivity to applied forces, fast response times, high resonance frequencies and low power consumption. However, ultra small size and low power handling result in unwanted consequences: smaller signal size and higher dissipation, making the NEMS devices more susceptible to external and intrinsic noise. The simplest version of a NEMS, a suspended nanomechanical structure with two distinct excitation states, can be used as an archetypal two state system to study a plethora of fundamental phenomena such as Duffing nonlinearity, stochastic resonance, and macroscopic quantum tunneling at low temperatures. From a technical perspective, there are numerous applications such nanomechanical memory elements, microwave switches and nanomechanical computation. The control and manipulation of the mechanical response of these two state systems can be realized by exploiting a (seemingly) counterintuitive physical phenomenon, Stochastic Resonance: in a noisy nonlinear mechanical system, the presence of noise can enhance the system response to an external stimulus. This Thesis is mainly dedicated to study possible applications of Stochastic Resonance in two-state nanomechanical systems. First, on chip signal amplification by 1/falpha is observed. The effectiveness of the noise assisted amplification is observed to decrease with increasing a. Experimental evidence shows an increase in asymmetry between the two states with increasing noise color. Considering the prevalence of 1/f alpha noise in the materials in integrated circuits, the signal enhancement demonstrated here, suggests beneficial use of the otherwise detrimental noise. Finally, a nanomechanical device, operating as a reprogrammable logic gate, and performing fundamental logic functions such as AND/OR and NAND/NOR is presented. The logic function can be programmed (from AND to OR) dynamically, by

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

PubMed

Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

2015-10-07

Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficient, nonlinear phase estimation with the nonmodulated pyramid wavefront sensor.

PubMed

Frazin, Richard A

2018-04-01

The sensitivity of the pyramid wavefront sensor (PyWFS) has made it a popular choice for astronomical adaptive optics (AAO) systems. The PyWFS is at its most sensitive when it is used without modulation of the input beam. In nonmodulated mode, the device is highly nonlinear. Hence, all PyWFS implementations on current AAO systems employ modulation to make the device more linear. The upcoming era of 30-m class telescopes and the demand for ultra-precise wavefront control stemming from science objectives that include direct imaging of exoplanets make using the PyWFS without modulation desirable. This article argues that nonlinear estimation based on Newton's method for nonlinear optimization can be useful for mitigating the effects of nonlinearity in the nonmodulated PyWFS. The proposed approach requires all optical modeling to be pre-computed, which has the advantage of avoiding real-time simulations of beam propagation. Further, the required real-time calculations are amenable to massively parallel computation. Numerical experiments simulate a PyWFS with faces sloped 3.7° to the horizontal, operating at a wavelength of 0.85 μm, and with an index of refraction of 1.45. A singular value analysis shows that the common practice of calculating two "slope" images from the four PyWFS pupil images discards critical information and is unsuitable for the nonmodulated PyWFS simulated here. Instead, this article advocates estimators that use the raw pixel values not only from the four geometrical images of the pupil, but from surrounding pixels as well. The simulations indicate that nonlinear estimation can be effective when the Strehl ratio of the input beam is greater than 0.3, and the improvement relative to linear estimation tends to increase at larger Strehl ratios. At Strehl ratios less than about 0.5, the performances of both the nonlinear and linear estimators are relatively insensitive to noise since they are dominated by nonlinearity error.

A nonlinear HP-type complementary resistive switch

NASA Astrophysics Data System (ADS)

Radtke, Paul K.; Schimansky-Geier, Lutz

2016-05-01

Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

Transient Torque Technique for Viscosity and Electrical Conductivity Determination of Semiconducting Liquids

NASA Technical Reports Server (NTRS)

Li, C.; Scripa, R. N.; Ban, H.; Lin, B.; Su, C.-H.; Lehoczky, S. L.; Feth, S.; Zhu, S.; Curreri, Peter A. (Technical Monitor)

2002-01-01

A novel apparatus based on transient torque technique is constructed in MSFC/NASA. The apparatus uses a 125um diameter quartz fiber as torsion wire. A high sensitive angular detector is implemented to measure the deflection angle of the crucible containing the liquid. A rotating magnetic field (RMF) is used to induce a rotating flow of a conducting or semiconducting melts. By measuring the magnitude and transient behavior of the induced deflection angle, the electrical conductivity and viscosity of the melt can be measured simultaneously. High purity elements namely Hg, Ga, Zn and Te are tested at room temperature and high temperature up to 900 C.

Scattering theory of nonlinear thermoelectricity in quantum coherent conductors.

PubMed

Meair, Jonathan; Jacquod, Philippe

2013-02-27

We construct a scattering theory of weakly nonlinear thermoelectric transport through sub-micron scale conductors. The theory incorporates the leading nonlinear contributions in temperature and voltage biases to the charge and heat currents. Because of the finite capacitances of sub-micron scale conducting circuits, fundamental conservation laws such as gauge invariance and current conservation require special care to be preserved. We do this by extending the approach of Christen and Büttiker (1996 Europhys. Lett. 35 523) to coupled charge and heat transport. In this way we write relations connecting nonlinear transport coefficients in a manner similar to Mott's relation between the linear thermopower and the linear conductance. We derive sum rules that nonlinear transport coefficients must satisfy to preserve gauge invariance and current conservation. We illustrate our theory by calculating the efficiency of heat engines and the coefficient of performance of thermoelectric refrigerators based on quantum point contacts and resonant tunneling barriers. We identify, in particular, rectification effects that increase device performance.

Preliminary Analysis of a Submerged Wave Energy Device

NASA Astrophysics Data System (ADS)

Wagner, J. R.; Wagner, J. J.; Hayatdavoodi, M.; Ertekin, R. C.

2016-02-01

Preliminary analysis of a submerged wave energy harvesting device is presented. The device is composed of a thin, horizontally submerged plate that is restricted to heave oscillations under the influence of surface waves. The submerged plate is oscillating, and it can be attached to a fixed rotor, or a piston, to harvest the wave energy. A fully submerged wave energy converter is preferred over a surface energy convertor due to its durability and less visual and physical distractions it presents. In this study, the device is subject to nonlinear shallow-water waves. Wave loads on the submerged oscillating plate are obtained via the Level I Green-Naghdi equations. The unsteady motion of the plate is obtained by solving the nonlinear equations of motion. The results are obtained for a range of waves with varying heights and periods. The amplitude and period of plate oscillations are analyzed as functions of the wave parameters and plate width. Particular attention is given to the selection of the site of desired wave field. Initial estimation on the amount of energy extraction from the device, located near shore at a given site, is provided.

Nonlinear optical effects in organic microstructures

NASA Astrophysics Data System (ADS)

Novikov, Vladimir B.; Mamonov, Evgeniy A.; Kopylov, Denis A.; Mitetelo, Nikolai V.; Venkatakrishnarao, D.; Narayana, YSLV; Chandrasekar, R.; Murzina, Tatiana V.

2017-05-01

Organic microstructures attract much attention due to their unique properties originating from the design of their shape and optical parameters. In this work we discuss the linear, second- and third-order nonlinear optical effects in arrays and in individual organic microstructures composed by self-assembling technique and formed randomly on top of a solid substrate. The structures under study consist of micro-spheres, -hemispheres or -frustums made of red laser dye and reveal an intense fluorescence (FL) in the visible spectral range. Importantly, that due to a high value of the refractive index and confined geometry, such micro-structures support the excitation of whispering gallery modes (WGM), which brings about strong and spectrally-selected light localization. We show that an amplification of the nonlinear optical effects is observed for these structures as compared to a homogeneous dye film of similar composition. The obtained data are in agreement with the results of the FDTD calculations performed for the structures of different dimensions. Perspectives of application of such type of organic nonlinear microresonators in optical devices are discussed.

Nonlinear dynamics of magnetically coupled beams for multi-modal vibration energy harvesting

NASA Astrophysics Data System (ADS)

Abed, I.; Kacem, N.; Bouhaddi, N.; Bouazizi, M. L.

2016-04-01

We investigate the nonlinear dynamics of magnetically coupled beams for multi-modal vibration energy harvesting. A multi-physics model for the proposed device is developed taking into account geometric and magnetic nonlinearities. The coupled nonlinear equations of motion are solved using the Galerkin discretization coupled with the harmonic balance method and the asymptotic numerical method. Several numerical simulations have been performed showing that the expected performances of the proposed vibration energy harvester are significantly promising with up to 130 % in term of bandwidth and up to 60 μWcm-3g-2 in term of normalized harvested power.

Nonlinear and Nonequilibrium Spin Injection in Magnetic Tunneling Junctions

NASA Astrophysics Data System (ADS)

Guo, Hong

2007-03-01

Quantitative analysis of charge and spin quantum transport in spintronic devices requires an atomistic first principles approach that can handle nonlinear and nonequilibrium transport conditions. We have developed an approach for this purpose based on real space density functional theory (DFT) carried out within the Keldysh nonequilibrium Green's function formalism (NEGF). We report theoretical analysis of nonlinear and nonequilibrium spin injection and quantum transport in Fe/MgO/Fe trilayer structures as a function of external bias voltage. Devices with well relaxed atomic structures and with FeO oxidization layers are investigated as a function of external bias voltage. We also report calculations of nonequilibrium spin injection into molecular layers and graphene. Comparisons to experimental data will be presented. Work in collaborations with: Derek Waldron, Vladimir Timochevski (McGill University); Ke Xia (Institute of Physics, Chinese Academy of Science, Beijing, China); Eric Zhu, Jian Wang (University of Hong Kong); Paul Haney, and Allan MacDonald (University of Texas at Austin).

Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

DOE PAGES

Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; ...

2016-04-04

Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m -1 K -2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, wemore » demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

Solidification and crystal growth of solid solution semiconducting alloys

NASA Technical Reports Server (NTRS)

Lehoczky, S. L.; Szofran, F. R.

1984-01-01

Problems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.

Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee

Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m -1 K -2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, wemore » demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

Circular electrodes to reduce the current variation of OTFTs with the drop-casted semiconducting layer

NASA Astrophysics Data System (ADS)

Dipu Kabir, H. M.; Ahmed, Zubair; Kariyadan, Remashan; Zhang, Lining; Chan, Mansun

2018-06-01

Circular organic thin film transistor (OTFT) structures are proposed to reduce the impact of variable grain alignment on the drive current of the polycrystalline organic thin film transistor (OTFT). As the circular structure is planar symmetric, the orientation of the grain cannot affect the drive current of the circular OTFT. Thus, circular electrodes expected to provide a lower variation. Top-gate, bottom-contact circular and conventional OTFTs with drop-casted polycrystalline 6,13-Bis(triisopropyl-silylethynyl) (TIPS)-Pentacene organic semiconducting layer (OSC) are fabricated to verify the theoretical variation reduction. The relative standard deviation (RSD), defined as the ratio of standard deviation and the average of drive current is used as the degree of variations in different structures. According to our fabrication result, circular transistors have a significantly lower variation (20% RSD), compared to the variation of conventional OTFTs (61% RSD). His research interests include Organic Electronics, VLSI Design, Embedded System, Neural Networks, and Solid-state devices. Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program. He is currently still consulting on the development of the next generation compact models. He has been actively contributing to the professional community and hold many positions. He was a Board of Governor, Chair of the Education Committee, the Chair of the Region 10 subcommittee and a Distinguished lecturer of the IEEE Electron Device Society. He has also chaired many international conferences and acting as editors for a number of technical journals. In addition, he has received many awards including the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Distinguished Teaching Award, the Shenzhen Science and Technology

Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3

PubMed Central

Preciado, Edwin; Schülein, Florian J.R.; Nguyen, Ariana E.; Barroso, David; Isarraraz, Miguel; von Son, Gretel; Lu, I-Hsi; Michailow, Wladislaw; Möller, Benjamin; Klee, Velveth; Mann, John; Wixforth, Achim; Bartels, Ludwig; Krenner, Hubert J.

2015-01-01

Lithium niobate is the archetypical ferroelectric material and the substrate of choice for numerous applications including surface acoustic wave radio frequencies devices and integrated optics. It offers a unique combination of substantial piezoelectric and birefringent properties, yet its lack of optical activity and semiconducting transport hamper application in optoelectronics. Here we fabricate and characterize a hybrid MoS2/LiNbO3 acousto-electric device via a scalable route that uses millimetre-scale direct chemical vapour deposition of MoS2 followed by lithographic definition of a field-effect transistor structure on top. The prototypical device exhibits electrical characteristics competitive with MoS2 devices on silicon. Surface acoustic waves excited on the substrate can manipulate and probe the electrical transport in the monolayer device in a contact-free manner. We realize both a sound-driven battery and an acoustic photodetector. Our findings open directions to non-invasive investigation of electrical properties of monolayer films. PMID:26493867

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

DOE PAGES

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.; ...

2016-11-09

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched tomore » the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less

Ultrafast frequency-agile terahertz devices using methylammonium lead halide perovskites

PubMed Central

Chanana, Ashish; Liu, Xiaojie; Vardeny, Zeev Valy

2018-01-01

The ability to control the response of metamaterial structures can facilitate the development of new terahertz devices, with applications in spectroscopy and communications. We demonstrate ultrafast frequency-agile terahertz metamaterial devices that enable such a capability, in which multiple perovskites can be patterned in each unit cell with micrometer-scale precision. To accomplish this, we developed a fabrication technique that shields already deposited perovskites from organic solvents, allowing for multiple perovskites to be patterned in close proximity. By doing so, we demonstrate tuning of the terahertz resonant response that is based not only on the optical pump fluence but also on the optical wavelength. Because polycrystalline perovskites have subnanosecond photocarrier recombination lifetimes, switching between resonances can occur on an ultrafast time scale. The use of multiple perovskites allows for new functionalities that are not possible using a single semiconducting material. For example, by patterning one perovskite in the gaps of split-ring resonators and bringing a uniform thin film of a second perovskite in close proximity, we demonstrate tuning of the resonant response using one optical wavelength and suppression of the resonance using a different optical wavelength. This general approach offers new capabilities for creating tunable terahertz devices. PMID:29736416

Self-assembled inorganic clusters of semiconducting quantum dots for effective solar hydrogen evolution.

PubMed

Gao, Yu-Ji; Yang, Yichen; Li, Xu-Bing; Wu, Hao-Lin; Meng, Shu-Lin; Wang, Yang; Guo, Qing; Huang, Mao-Yong; Tung, Chen-Ho; Wu, Li-Zhu

2018-05-08

Owing to promoted electron-hole separation, the catalytic activity of semiconducting quantum dots (QDs) towards solar hydrogen (H2) production has been significantly enhanced by forming self-assembled clusters with ZnSe QDs made ex situ. Taking advantage of the favored interparticle hole transfer to ZnSe QDs, the rate of solar H2 evolution of CdSe QDs can be increased to ∼30 000 μmol h-1 g-1 with ascorbic acid as the sacrificial reagent, ∼150-fold higher than that of bare CdSe QDs clusters under the same conditions.

Nonlinear optical studies on 1,3-disubstituent chalcones doped polymer films

NASA Astrophysics Data System (ADS)

Poornesh, P.; Shettigar, Seetharam; Umesh, G.; Manjunatha, K. B.; Prakash Kamath, K.; Sarojini, B. K.; Narayana, B.

2009-04-01

We report the measurements of the third-order nonlinear optical properties of recently synthesized and characterized two different 1,3-disubstituent chalcones doped PMMA films, with the prospective of reaching a good compromise between processability and high nonlinear optical properties. The measurements were done using nanosecond Z-scan at 532 nm. The Z-scan spectra reveal a large negative nonlinear refraction coefficient n2 of the order 10 -11 esu and the molecular two photon absorption cross section is 10 -46 cm 4 s/photon. The doped films exhibit good optical power limiting property under nanosecond regime and the two photon absorption (TPA) is the dominating process leading to the nonlinear behavior. The improvement in the nonlinear properties has been observed when methylenedioxy group is replaced by dimethoxy group due to increase in conjugation length. The observed nonlinear parameters of chalcone derivatives doped PMMA film is comparable with stilbazolieum derivatives, a well-known class of optical materials for photonics and biophotonics applications, which suggests that, these moieties have potential for the application of all-optical limiting and switching devices.

Observation of nonlinear dissipation in piezoresistive diamond nanomechanical resonators by heterodyne down-mixing.

PubMed

Imboden, Matthias; Williams, Oliver A; Mohanty, Pritiraj

2013-09-11

We report the observation of nonlinear dissipation in diamond nanomechanical resonators measured by an ultrasensitive heterodyne down-mixing piezoresistive detection technique. The combination of a hybrid structure as well as symmetry breaking clamps enables sensitive piezoresistive detection of multiple orthogonal modes in a diamond resonator over a wide frequency and temperature range. Using this detection method, we observe the transition from purely linear dissipation at room temperature to strongly nonlinear dissipation at cryogenic temperatures. At high drive powers and below liquid nitrogen temperatures, the resonant structure dynamics follows the Pol-Duffing equation of motion. Instead of using the broadening of the full width at half-maximum, we propose a nonlinear dissipation backbone curve as a method to characterize the strength of nonlinear dissipation in devices with a nonlinear spring constant.

Deflectometry using portable devices

NASA Astrophysics Data System (ADS)

Butel, Guillaume P.; Smith, Greg A.; Burge, James H.

2015-02-01

Deflectometry is a powerful metrology technique that uses off-the-shelf equipment to achieve nanometer-level accuracy surface measurements. However, there is no portable device to quickly measure eyeglasses, lenses, or mirrors. We present an entirely portable new deflectometry technique that runs on any Android™ smartphone with a front-facing camera. Our technique overcomes some specific issues of portable devices like screen nonlinearity and automatic gain control. We demonstrate our application by measuring an amateur telescope mirror and simulating a measurement of the faulty Hubble Space Telescope primary mirror. Our technique can, in less than 1 min, measure surface errors with accuracy up to 50 nm RMS, simply using a smartphone.

XRD- and infrared-probed anisotropic thermal expansion properties of an organic semiconducting single crystal.

PubMed

Mohanraj, J; Capria, E; Benevoli, L; Perucchi, A; Demitri, N; Fraleoni-Morgera, A

2018-01-17

The anisotropic thermal expansion properties of an organic semiconducting single crystal constituted by 4-hydroxycyanobenzene (4HCB) have been probed by XRD in the range 120-300 K. The anisotropic thermal expansion coefficients for the three crystallographic axes and for the crystal volume have been determined. A careful analysis of the crystal structure revealed that the two different H-bonds stemming from the two independent, differently oriented 4HCB molecules composing the unit cell have different rearrangement patterns upon temperature variations, in terms of both bond length and bond angle. Linearly Polarized Mid InfraRed (LP-MIR) measurements carried out in the same temperature range, focused on the O-H bond spectral region, confirm this finding. The same LP-MIR measurements, on the basis of a semi-empirical relation and of geometrical considerations and assumptions, allowed calculation of the -CNH-O- hydrogen bond length along the a and b axes of the crystal. In turn, the so-calculated -CNH-O- bond lengths were used to derive the thermal expansion coefficients along the corresponding crystal axes, as well as the volumetric one, using just the LP-MIR data. Reasonable to good agreement with the same values obtained from XRD measurements was obtained. This proof-of-principle opens interesting perspectives about the possible development of a rapid, low cost and industry-friendly assessment of the thermal expansion properties of organic semiconducting single crystals (OSSCs) involving hydrogen bonds.

Hot Electrons Regain Coherence in Semiconducting Nanowires

NASA Astrophysics Data System (ADS)

Reiner, Jonathan; Nayak, Abhay Kumar; Avraham, Nurit; Norris, Andrew; Yan, Binghai; Fulga, Ion Cosma; Kang, Jung-Hyun; Karzig, Toesten; Shtrikman, Hadas; Beidenkopf, Haim

2017-04-01

The higher the energy of a particle is above equilibrium, the faster it relaxes because of the growing phase space of available electronic states it can interact with. In the relaxation process, phase coherence is lost, thus limiting high-energy quantum control and manipulation. In one-dimensional systems, high relaxation rates are expected to destabilize electronic quasiparticles. Here, we show that the decoherence induced by relaxation of hot electrons in one-dimensional semiconducting nanowires evolves nonmonotonically with energy such that above a certain threshold hot electrons regain stability with increasing energy. We directly observe this phenomenon by visualizing, for the first time, the interference patterns of the quasi-one-dimensional electrons using scanning tunneling microscopy. We visualize the phase coherence length of the one-dimensional electrons, as well as their phase coherence time, captured by crystallographic Fabry-Pèrot resonators. A remarkable agreement with a theoretical model reveals that the nonmonotonic behavior is driven by the unique manner in which one-dimensional hot electrons interact with the cold electrons occupying the Fermi sea. This newly discovered relaxation profile suggests a high-energy regime for operating quantum applications that necessitate extended coherence or long thermalization times, and may stabilize electronic quasiparticles in one dimension.

Nonlinear energy harvesting.

PubMed

Cottone, F; Vocca, H; Gammaitoni, L

2009-02-27

Ambient energy harvesting has been in recent years the recurring object of a number of research efforts aimed at providing an autonomous solution to the powering of small-scale electronic mobile devices. Among the different solutions, vibration energy harvesting has played a major role due to the almost universal presence of mechanical vibrations. Here we propose a new method based on the exploitation of the dynamical features of stochastic nonlinear oscillators. Such a method is shown to outperform standard linear oscillators and to overcome some of the most severe limitations of present approaches. We demonstrate the superior performances of this method by applying it to piezoelectric energy harvesting from ambient vibration.

Determination of refraction nonlinear index, for effect thermal, of solutions with nanoparticles of gold

NASA Astrophysics Data System (ADS)

Olivares-Vargas, A.; Trejo-Durán, M.; Alvarado-Méndez, E.; Cornejo-Monroy, D.; Mata-Chávez, R. I.; Estudillo-Ayala, J. M.; Castaño-Meneses, V.

2013-09-01

Research of nonlinear optical properties of materials for manufacturing opto-electronic devices, had a great growth in the last years. The solutions with nanoparticle metals present nonlinear optical properties. In this work we present the results of characterizing, analyzing and determining the magnitude and sign of the nonlinear refractive index, using the z-scan technique in solutions with nanoparticles of gold, lipoic acid and sodium chloride. We used a continuous Argon laser at 514 nm with variable power, an 18 cms lens, and a chopper. We determined the nonlinear refractive index in the order of 10-9. These materials have potential applications mainly as optical limiters.

Multiphysics modeling of non-linear laser-matter interactions for optically active semiconductors

NASA Astrophysics Data System (ADS)

Kraczek, Brent; Kanp, Jaroslaw

Development of photonic devices for sensors and communications devices has been significantly enhanced by computational modeling. We present a new computational method for modelling laser propagation in optically-active semiconductors within the paraxial wave approximation (PWA). Light propagation is modeled using the Streamline-upwind/Petrov-Galerkin finite element method (FEM). Material response enters through the non-linear polarization, which serves as the right-hand side of the FEM calculation. Maxwell's equations for classical light propagation within the PWA can be written solely in terms of the electric field, producing a wave equation that is a form of the advection-diffusion-reaction equations (ADREs). This allows adaptation of the computational machinery developed for solving ADREs in fluid dynamics to light-propagation modeling. The non-linear polarization is incorporated using a flexible framework to enable the use of multiple methods for carrier-carrier interactions (e.g. relaxation-time-based or Monte Carlo) to enter through the non-linear polarization, as appropriate to the material type. We demonstrate using a simple carrier-carrier model approximating the response of GaN. Supported by ARL Materials Enterprise.

Enhanced Kerr nonlinearity in a quantized four-level graphene nanostructure

NASA Astrophysics Data System (ADS)

Ghahraman, Solookinejad; M, Panahi; E, Ahmadi; Seyyed, Hossein Asadpour

2016-07-01

In this paper, a new model is proposed for manipulating the Kerr nonlinearity of right-hand circular probe light in a monolayer of graphene nanostructure. By using the density matrix equations and quantum optical approach, the third-order susceptibility of probe light is explored numerically. It is realized that the enhanced Kerr nonlinearity with zero linear absorption can be provided by selecting the appropriate quantities of controllable parameters, such as Rabi frequency and elliptical parameter of elliptical polarized coupling field. Our results may be useful applications in future all-optical system devices in nanostructures.

Nonlinear spectral singularities for confined nonlinearities.

PubMed

Mostafazadeh, Ali

2013-06-28

We introduce a notion of spectral singularity that applies for a general class of nonlinear Schrödinger operators involving a confined nonlinearity. The presence of the nonlinearity does not break the parity-reflection symmetry of spectral singularities but makes them amplitude dependent. Nonlinear spectral singularities are, therefore, associated with a resonance effect that produces amplified waves with a specific amplitude-wavelength profile. We explore the consequences of this phenomenon for a complex δ-function potential that is subject to a general confined nonlinearity.

Effect of fractal silver electrodes on charge collection and light distribution in semiconducting organic polymer films

DOE PAGES

Chamousis, Rachel L.; Chang, Lilian; Watterson, William J.; ...

2014-08-21

Living organisms use fractal structures to optimize material and energy transport across regions of differing size scales. Here we test the effect of fractal silver electrodes on light distribution and charge collection in organic semiconducting polymer films made of P3HT and PCBM. The semiconducting polymers were deposited onto electrochemically grown fractal silver structures (5000 nm × 500 nm; fractal dimension of 1.71) with PEDOT:PSS as hole-selective interlayer. The fractal silver electrodes appear black due to increased horizontal light scattering, which is shown to improve light absorption in the polymer. According to surface photovoltage spectroscopy, fractal silver electrodes outperform the flatmore » electrodes when the BHJ film thickness is large (>400 nm, 0.4 V photovoltage). Photocurrents of up to 200 microamperes cm -2 are generated from the bulk heterojunction (BHJ) photoelectrodes under 435 nm LED (10–20 mW cm -2) illumination in acetonitrile solution containing 0.005 M ferrocenium hexafluorophosphate as the electron acceptor. In conclusion, the low IPCE values (0.3–0.7%) are due to slow electron transfer to ferrocenium ion and due to shunting along the large metal–polymer interface. Overall, this work provides an initial assessment of the potential of fractal electrodes for organic photovoltaic cells.« less

Structural analysis of benzothienobenzothiophene-based soluble organic semiconducting crystals grown by liquid crystal solvent

NASA Astrophysics Data System (ADS)

Shibata, Yosei; Matsuzaki, Tomoya; Ishinabe, Takahiro; Fujikake, Hideo

2018-06-01

In this study, we analyzed organic semiconducting single crystals composed of benzothienobenzothiophene derivatives (2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, C8-BTBT) grown by nematic-phase liquid crystal (LC) solvent. As a result, we clarified that the crystal b-axis direction of the C8-BTBT single crystals was consistent with the LC alignment direction. By optical evaluation and simulation based on density functional theory, we found that the C8-BTBT single crystals in LC solvent exhibited a novel molecular conformation having alkyl chains oriented toward the b-axis.

Ultrafast nonlinear spectrometer for material characterization

NASA Astrophysics Data System (ADS)

Negres, Raluca Aurelia

2001-11-01

This work describes the use of a broadband spectral source for nonlinear spectroscopy to characterize various materials with potential applications in confocal microscopy, biological sample markers, optical limiting devices and optical switches. The goal is to study the spectrum of nonlinear absorption and the dispersion of nonlinear refraction as well as the dynamics of the nonlinearities by means of femtosecond excite-probe experiments. The principle is quite simple: if a sample is under the influence of a strong fs excitation pulse and a probe pulse beam is incident at the same time, or shortly after (within the decay time of the nonlinearity), then the probe pulse will sense the nonlinearity induced by the excitation. If the probe pulse is broadband, a femtosecond white-light continuum (WLC) in our case, we can monitor the nonlinearity induced over the entire continuum spectrum in one laser ``shot''. The use of femtosecond laser pulses to generate WLC will provide femtosecond time resolution for time-resolved spectroscopy. We built the nonlinear spectrometer and allowed for many degrees of flexibility in terms of choice of wavelengths for pump and probe beams and a dual detection system to cover both visible and infrared spectral ranges. We have the possibility of performing broad band spectral measurements using a spectrometer or selected narrow bandwidth probes incident on Si or Ge photodiodes, for improved S/N ratios. The intrinsic properties of the continuum probe demand a careful characterization of its spatial and temporal profile. Knowledge of the dispersion of the index of refraction in various optical elements, including the sample itself, is also required for a correct analysis of the transient absorption raw data, especially for short time-scale dynamics of nonlinear processes. We tested the system using well-characterized semiconductor samples, and the results came out in excellent agreement with those from previous picosecond Z-scan measurements

Devices and Systems for Nonlinear Optical Information Processing

DTIC Science & Technology

1988-11-01

in the VLSI literature [7, 8, 9], in which basic physical principles have been invoked to both understand current VLSI performance and to project...the first time, that in fact accounts for a very wide range of observed but previously unexplained phenomena [Appendix 4; AFOSR Jour. Publ. 7, AFOSR...the variable grating mode liquid crystal device A. R. Tongay. Jr. Abstract. The physical principles of operation of the variable grating mode C. S. Wu

Nonlinear optical thin films

NASA Technical Reports Server (NTRS)

Leslie, Thomas M.

1993-01-01

A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

Novel Polymeric Dielectric Materials for the Additive Manufacturing of Microwave Devices

NASA Astrophysics Data System (ADS)

O'Keefe, Shamus E.

functional groups) and dielectric properties were explored. The results indicate that backbone rigidity and the inclusion of fluorine lead to excellent dielectric properties, however, often at the expense of mechanical properties. Chapter 5 explores the optimization of PTFE core-shell nanoparticles via a novel PTFE/polyimide (PI) core-shell nanoparticle. PTFE/PI core-shell nanoparticles were synthesized via electrostatic interaction between the PTFE cores and a PI precursor, poly(amic) acid salt (PAAS). The PAAS is converted to PI by thermal imidization. The PI has properties superior to those of PA for microwave applications and the results suggest the promise of PTFE/PI core-shell nanoparticles for use in AM of microwave devices. Chapter 6 describes the first report of on actively-tunable microwave substrate made possible by a semiconducting polymer composite blend. The composite blend is comprised of poly(3-hexylthiophene) (P3HT) as the semiconducting polymer and [6,6]-Phenyl C61 butyric acid methyl ester (PCBM) while the remainder of the composite is comprised of a low dielectric constant polymer polydimethylsiloxane (PDMS). When subjected to photo excitation (white light, spectrum centered at 532 nm), the composite exhibits a tunability of the permittivity up to 20%. The results suggest strong promise for the use of semiconducting polymers in actively-tunable microwave devices. Finally, Chapter 7 presents a summary of the salient conclusions of the reported studies. The chapter concludes with a few brief remarks of my personal experience as a non-traditional student and the challenges therein.

Semiconducting polymer dot as a highly effective contrast agent for photoacoustic imaging

NASA Astrophysics Data System (ADS)

Yuan, Zhen; Zhang, Jian

2018-02-01

In this study, we developed a novel PIID-DTBT based semiconducting polymer dots (Pdots) that have broad and strong optical absorption in the visible-light region (500 nm - 700 nm). Gold nanoparticles (GNPs) and gold nanorods (GNRs) that have been verified as an excellent photoacoustic contrast agent were compared with Pdots based on photoacoustic imaging method. Both ex vivo and in vivo experiment demonstrated Pdots have a better photoacoustic conversion efficiency at 532 nm than GNPs and similar photoacoustic performance with GNRs at 700 nm at the same mass concentration. Our work demonstrates the great potential of Pdots as a highly effective contrast agent for precise localization of lesions relative to the blood vessels based on photoacoustic tomography imaging.

Nonlinear Conductive Behaviour of Silver Nanowires/Silicone Rubber Composites

NASA Astrophysics Data System (ADS)

Lu, Pin; Qu, Zhaoming; Wang, Qingguo; Bai, Liyun; Zhao, Shiyang

2018-01-01

Silver nanowires with an average length of 10 μm and diameter of about 90 nm have been synthesized by polyol reduction of silver nitrate in the presence of polyvinylpyrrolidone(PVP). Silver nanowires (AgNWs)/silicone rubber (SR) composites have been made by mixing silver nanowires into silicone rubber. The nonlinear response of AgNWs/SR composites under high electric field is investigated. The nonlinear Conductive behavior of composites is considered as a competitive process of several effects. From the perspective of the microstructure of composites, the conductive path is established by the quantum tunnel effect between silver nanowires. The influence factors on the conductivity of composites are discussed and analyzed. The results show that the AgNWs/SR composites with nonlinear conductive properties are of great potential application in electromagnetic protection of electron device and system.

Hydrophone area-averaging correction factors in nonlinearly generated ultrasonic beams

NASA Astrophysics Data System (ADS)

Cooling, M. P.; Humphrey, V. F.; Wilkens, V.

2011-02-01

The nonlinear propagation of an ultrasonic wave can be used to produce a wavefield rich in higher frequency components that is ideally suited to the calibration, or inter-calibration, of hydrophones. These techniques usually use a tone-burst signal, limiting the measurements to harmonics of the fundamental calibration frequency. Alternatively, using a short pulse enables calibration at a continuous spectrum of frequencies. Such a technique is used at PTB in conjunction with an optical measurement technique to calibrate devices. Experimental findings indicate that the area-averaging correction factor for a hydrophone in such a field demonstrates a complex behaviour, most notably varying periodically between frequencies that are harmonics of the centre frequency of the original pulse and frequencies that lie midway between these harmonics. The beam characteristics of such nonlinearly generated fields have been investigated using a finite difference solution to the nonlinear Khokhlov-Zabolotskaya-Kuznetsov (KZK) equation for a focused field. The simulation results are used to calculate the hydrophone area-averaging correction factors for 0.2 mm and 0.5 mm devices. The results clearly demonstrate a number of significant features observed in the experimental investigations, including the variation with frequency, drive level and hydrophone element size. An explanation for these effects is also proposed.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

PubMed

Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

2013-03-26

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

PREFACE: 18th Microscopy of Semiconducting Materials Conference (MSM XVIII)

NASA Astrophysics Data System (ADS)

Walther, T.; Hutchison, John L.

2013-11-01

YRM logo This volume contains invited and contributed papers from the 18th international conference on 'Microscopy of Semiconducting Materials' held at St Catherine's College, University of Oxford, on 7-11 April 2013. The meeting was organised under the auspices of the Royal Microscopical Society and supported by the Institute of Physics as well as the Materials Research Society of the USA. This conference series deals with recent advances in semiconductor studies carried out by all forms of microscopy, with an emphasis on electron microscopy and scanning probe microscopy with high spatial resolution. This time the meeting was attended by 109 delegates from 17 countries world-wide. We were welcomed by Professor Sir Peter Hirsch, who noted that this was the first of these conferences where Professor Tony Cullis was unable to attend, owing to ill-health. During the meeting a card containing greetings from many of Tony's friends and colleagues was signed, and duly sent to Tony afterwards. As semiconductor devices shrink further new routes for device processing and characterisation need to be developed, and, for the latter, methods that offer sub-nanometre spatial resolution are particularly valuable. The various forms of imaging, diffraction and spectroscopy available in modern microscopes are powerful tools for studying the microstructure, electronic structure, chemistry and also electric fields in semiconducting materials. Recent advances in instrumentation, from lens aberration correction in both TEM and STEM instruments, to the development of a wide range of scanning probe techniques, as well as new methods of signal quantification have been presented at this conference. Two topics that have at this meeting again highlighted the interesting contributions of aberration corrected transmission electron microscopy were: contrast quantification of annular dark-field STEM images in terms of chemical composition (Z-contrast), sample thickness and strain, and the study of

Laser method for forming low-resistance ohmic contacts on semiconducting oxides

DOEpatents

Narayan, Jagdish

1981-01-01

This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

A Simple Bimodular Nonlinear Element

NASA Astrophysics Data System (ADS)

Mikhailov, S. G.; Rudenko, O. V.

2018-05-01

We have studied the dynamics of an artificial nonlinear element representing a flexible membrane with oscillation limiters and a static pressing force. Such an element has the property of "bimodularity" and demonstrates "modular" nonlinearity. We have constructed a mathematical model that describes these oscillations. Their shapes have been calculated. We follow the analogy with a classical object—Galileo's pendulum. We demonstrate that for a low-frequency excitation of the membrane, the level of the harmonics in the spectrum is higher than in the vicinity of the resonance frequency. We have established a strong dependence of the level of the harmonics on the magnitude of the pressing force for a weak perturbation. We propose a design scheme for a device in the quasi-static approximation possessing the property of bimodularity. We perform an experiment that confirms its operability. We show a qualitative coincidence of the experimental results and calculations when detecting an amplitude-modulated signal.

Metamaterials-based sensor to detect and locate nonlinear elastic sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gliozzi, Antonio S.; Scalerandi, Marco; Miniaci, Marco

2015-10-19

In recent years, acoustic metamaterials have attracted increasing scientific interest for very diverse technological applications ranging from sound abatement to ultrasonic imaging, mainly due to their ability to act as band-stop filters. At the same time, the concept of chaotic cavities has been recently proposed as an efficient tool to enhance the quality of nonlinear signal analysis, particularly in the ultrasonic/acoustic case. The goal of the present paper is to merge the two concepts in order to propose a metamaterial-based device that can be used as a natural and selective linear filter for the detection of signals resulting from themore » propagation of elastic waves in nonlinear materials, e.g., in the presence of damage, and as a detector for the damage itself in time reversal experiments. Numerical simulations demonstrate the feasibility of the approach and the potential of the device in providing improved signal-to-noise ratios and enhanced focusing on the defect locations.« less

Ultrahigh Performance C60 Nanorod Large Area Flexible Photoconductor Devices via Ultralow Organic and Inorganic Photodoping

PubMed Central

Saran, Rinku; Stolojan, Vlad; Curry, Richard J.

2014-01-01

One dimensional single-crystal nanorods of C60 possess unique optoelectronic properties including high electron mobility, high photosensitivity and an excellent electron accepting nature. In addition, their rapid large scale synthesis at room temperature makes these organic semiconducting nanorods highly attractive for advanced optoelectronic device applications. Here, we report low-cost large-area flexible photoconductor devices fabricated using C60 nanorods. We demonstrate that the photosensitivity of the C60 nanorods can be enhanced ~400-fold via an ultralow photodoping mechanism. The photodoped devices offer broadband UV-vis-NIR spectral tuneability, exhibit a detectivitiy >109 Jones, an external quantum efficiency of ~100%, a linear dynamic range of 80 dB, a rise time 60 µs and the ability to measure ac signals up to ~250 kHz. These figures of merit combined are among the highest reported for one dimensional organic and inorganic large-area planar photoconductors and are competitive with commercially available inorganic photoconductors and photoconductive cells. With the additional processing benefits providing compatibility with large-area flexible platforms, these devices represent significant advances and make C60 nanorods a promising candidate for advanced photodetector technologies. PMID:24853479

Influence of cysteine doping on photoluminescence intensity from semiconducting single-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Karachevtsev, V. A.

2015-03-01

Photoluminescence (PL) from semiconducting single-walled carbon nanotubes can be applied for detection of cysteine. It is shown that cysteine doping (from 10-8 to 10-3 M) into aqueous suspension of nanotubes with adsorbed DNA leads to increase of PL intensity. The PL intensity was enhanced by 27% at 10-3 M cysteine concentration in suspension. Most likely, the PL intensity increases due to the passivation of p-defects on the nanotube by the cysteine containing reactive thiol group. The effect of doping with other amino acids without this group (methionine, serine, aspartic acid, lysine, proline) on the PL intensity is essentially weaker.

Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?

PubMed

Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

2015-02-21

Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp(2) carbon-based nanodevices. To evaluate whether such enhanced properties would be retained under various realistic conditions, we investigate the structural and electronic properties of semiconducting carbon nanotubes on perfect and defective hexagonal boron nitride sheets under an external electric field as well as with a metal impurity, using density functional theory. We verify that the use of a perfect hexagonal boron nitride sheet as a substrate indeed improves the device performances of carbon nanotubes, compared with the use of conventional substrates such as SiO2. We further show that even the hexagonal boron nitride with some defects can show better performance as a substrate. Our calculations, on the other hand, also suggest that some defective boron nitride layers with a monovacancy and a nickel impurity could bring about poor device behavior since the imperfections impair electrical conductivity due to residual scattering under an applied electric field.

New evidence and impact of electron transport non-linearities based on new perturbative inter-modulation analysis

NASA Astrophysics Data System (ADS)

van Berkel, M.; Kobayashi, T.; Igami, H.; Vandersteen, G.; Hogeweij, G. M. D.; Tanaka, K.; Tamura, N.; Zwart, H. J.; Kubo, S.; Ito, S.; Tsuchiya, H.; de Baar, M. R.; LHD Experiment Group

2017-12-01

A new methodology to analyze non-linear components in perturbative transport experiments is introduced. The methodology has been experimentally validated in the Large Helical Device for the electron heat transport channel. Electron cyclotron resonance heating with different modulation frequencies by two gyrotrons has been used to directly quantify the amplitude of the non-linear component at the inter-modulation frequencies. The measurements show significant quadratic non-linear contributions and also the absence of cubic and higher order components. The non-linear component is analyzed using the Volterra series, which is the non-linear generalization of transfer functions. This allows us to study the radial distribution of the non-linearity of the plasma and to reconstruct linear profiles where the measurements were not distorted by non-linearities. The reconstructed linear profiles are significantly different from the measured profiles, demonstrating the significant impact that non-linearity can have.

Development of a Nonlinear Acoustic Phased Array and its Interaction with Thin Plates

NASA Astrophysics Data System (ADS)

Anzel, Paul; Donahue, Carly; Daraio, Chiara

2015-03-01

Numerous technologies are based on the principle of focusing acoustic energy. We propose a new device to focus sound waves which exploits highly nonlinear dynamics. The advantages of this device are the capability of generating very highly powerful acoustic pulses and potential operation in high-temperature environments where traditional piezoelectrics may fail. This device is composed of rows of ball bearings placed in contact with a medium of interest and with an actuator on the top. Elastic spherical particles have a contact force that grows with their relative displacement to the three-halves power (Hertzian contact). When several spheres are placed in a row, the particles support the propagation of ``solitary waves''--strong, compact stress-wave pulses whose tendency to disperse is counteracted by the nonlinearity of the sphere's contact force. We present results regarding the experimental operation of the device and its comparison to theory and numerical simulations. We will show how well this system is capable of focusing energy at various locations in the medium, and the limits imposed by pre-compression. Finally, the effects of timing error on energy focusing will be demonstrated. This research has been supported by a NASA Space Technology Research Fellowship.

Nonlinear optical modulation in a plasmonic Bi:YIG Mach-Zehnder interferometer

NASA Astrophysics Data System (ADS)

Firby, C. J.; Elezzabi, A. Y.

2017-02-01

In this work, we propose a magnetoplasmonic modulator for nonlinear radio-frequency (RF) modulation of an integrated optical signal. The modulator consists of a plasmonic Mach-Zehnder interferometer (MZI), constructed of the ferrimagnetic garnet, bismuth-substituted yttrium iron garnet (Bi:YIG). The transverse component of the Bi:YIG magnetization induces a nonreciprocal phase shift (NRPS) onto the guided optical mode, which can be actively modulated through external magnetic fields. In an MZI, the modulated phase shift in turn modulates the output optical intensity. Due to the highly nonlinear evolution of the Bi:YIG magnetization, we show that the spectrum of the output modulated intensity signal can contain harmonics of the driving RF field, frequency splitting around the driving frequency, down-conversion, or mixing of multiple RF signals. This device provides a unique mechanism of simultaneously generating a number of modulation frequencies within a single device.

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

PubMed Central

Feng, Ping; Shao, Feng; Shi, Yi; Wan, Qing

2014-01-01

One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed. PMID:25232915

n-Type diamond and method for producing same

DOEpatents

Anderson, Richard J.

2002-01-01

A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

Semiconductive 3-D haloplumbate framework hybrids with high color rendering index white-light emission.

PubMed

Wang, Guan-E; Xu, Gang; Wang, Ming-Sheng; Cai, Li-Zhen; Li, Wen-Hua; Guo, Guo-Cong

2015-12-01

Single-component white light materials may create great opportunities for novel conventional lighting applications and display systems; however, their reported color rendering index (CRI) values, one of the key parameters for lighting, are less than 90, which does not satisfy the demand of color-critical upmarket applications, such as photography, cinematography, and art galleries. In this work, two semiconductive chloroplumbate (chloride anion of lead(ii)) hybrids, obtained using a new inorganic-organic hybrid strategy, show unprecedented 3-D inorganic framework structures and white-light-emitting properties with high CRI values around 90, one of which shows the highest value to date.

Synthesis of nanocomposites based on carbon nanotube/smart copolymer with nonlinear optical properties

NASA Astrophysics Data System (ADS)

Sousani, Abbas; Motiei, Hamideh; Najafimoghadam, Peyman; Hasanzade, Reza

2017-05-01

In this study new nanocompoites based on polyglycidylmethacrylate grafted 4-[(4-methoxyphenyl) diazenyl] phenol (Azo-PGMA) and Carboxylicacid functionalized multi-walled carbon nanotubes (MWCNT-COOH) were prepared. The nanocomposites structure was characterized by FT-IR, TGA and SEM. The Z-scan technique was applied for measuring the nonlinear parameters of nanocomposites. The samples after solving in AWM solution (equal ratio of acetone, deionized water and methanol) were investigated by using closed aperture Z-scan technique and a diode-pumped laser at the line 532 nm. All the nonlinear refractive index of the samples at three concentrations of carbon nanotubes in three different intensities of the laser beam were investigated and the nonlinear optical response of them are compared under the same condition. Because of high order of nonlinear refractive coefficient and good nonlinearity, these compounds are suitable candidate for optical switching, optical limiting and electro-optical devices.

Ultra-fast dynamics in the nonlinear optical response of silver nanoprism ordered arrays.

PubMed

Sánchez-Esquivel, Héctor; Raygoza-Sanchez, Karen Y; Rangel-Rojo, Raúl; Kalinic, Boris; Michieli, Niccolò; Cesca, Tiziana; Mattei, Giovanni

2018-03-15

In this work we present the study of the ultra-fast dynamics of the nonlinear optical response of a honeycomb array of silver triangular nanoprisms, performed using a femtosecond pulsed laser tuned with the dipolar surface plasmon resonance of the nanoarray. Nonlinear absorption and refraction, and their time-dependence, were explored using the z-scan and time-resolved excite-probe techniques. Nonlinear absorption is shown to change sign with the input irradiance and the behavior was explained on the basis of a three-level model. The response time was determined to be in the picosecond regime. A technique based on a variable frequency chopper was also used in order to discriminate the thermal and electronic contributions to the nonlinearity, which were found to have opposite signs. All these findings propel the investigated nanoprism arrays as good candidates for applications in advanced ultra-fast nonlinear nanophotonic devices.

Understanding and Controlling Nanoscale Morphology in Self-Assembled Semiconducting Materials

NASA Astrophysics Data System (ADS)

Kang, Hyeyeon

Self-assembled semiconducting materials have been rapidly developed for a range of applications. This work aims to control the morphology of nanostructured semiconductors to understand how their functions arise from the structural properties. The first part of this dissertation focuses on the formation of a bulk-heterojunction (BHJ) in the active layer of organic photovoltaics (OPV). A BHJ is a bicontinuous interpenetrating network of organic components. The phase separation of the electron donor and the acceptor is required to achieve a BHJ structure in the nanostructured morphology, which promotes an efficient charge transportation. The use of solvent additive is one of the strategies to control the spontaneous phase separation during the film formation. Low vapor pressure solvent additives are introduced to a polymer casting solution in a sequentially processed OPV system, to study the swelling effect on the phase separation. In particular, the change in crystallinity and vertical mixing will be intensively studied upon polymer swelling. As another strategy, we introduce a molecular structure change to fullerene derivatives. A small structural variation leads to a large enough contrast of their surface energy, which is attributed to different vertical phase separation in the active layer. It eventually allows us to examine photovoltaic performance and device physics. In the second part, mesoporous inorganic films are investigated by preparation from a nanocrystal solution or sol-gel precursors for solar energy applications. Mesoporous nanocrystal-based titania is synthesized for inorganic/organic hybrid solar cells. The effect of surface modification is examined by anchoring a fullerene derivative on to titania surface. 3D interconnected mesoporous tantalum nitride films are prepared via sol-gel method as photoanodes in solar water splitting. The simple synthetic method using polymer template enables us to successfully prepare nitride films with excellent pore

Linear and nonlinear verification of gyrokinetic microstability codes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bravenec, R. V.; Candy, J.; Barnes, M.

2011-12-15

Verification of nonlinear microstability codes is a necessary step before comparisons or predictions of turbulent transport in toroidal devices can be justified. By verification we mean demonstrating that a code correctly solves the mathematical model upon which it is based. Some degree of verification can be accomplished indirectly from analytical instability threshold conditions, nonlinear saturation estimates, etc., for relatively simple plasmas. However, verification for experimentally relevant plasma conditions and physics is beyond the realm of analytical treatment and must rely on code-to-code comparisons, i.e., benchmarking. The premise is that the codes are verified for a given problem or set ofmore » parameters if they all agree within a specified tolerance. True verification requires comparisons for a number of plasma conditions, e.g., different devices, discharges, times, and radii. Running the codes and keeping track of linear and nonlinear inputs and results for all conditions could be prohibitive unless there was some degree of automation. We have written software to do just this and have formulated a metric for assessing agreement of nonlinear simulations. We present comparisons, both linear and nonlinear, between the gyrokinetic codes GYRO[J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] and GS2[W. Dorland, F. Jenko, M. Kotschenreuther, and B. N. Rogers, Phys. Rev. Lett. 85, 5579 (2000)]. We do so at the mid-radius for the same discharge as in earlier work [C. Holland, A. E. White, G. R. McKee, M. W. Shafer, J. Candy, R. E. Waltz, L. Schmitz, and G. R. Tynan, Phys. Plasmas 16, 052301 (2009)]. The comparisons include electromagnetic fluctuations, passing and trapped electrons, plasma shaping, one kinetic impurity, and finite Debye-length effects. Results neglecting and including electron collisions (Lorentz model) are presented. We find that the linear frequencies with or without collisions agree well between codes, as do the time

Model Equation for Acoustic Nonlinear Measurement of Dispersive Specimens at High Frequency

NASA Astrophysics Data System (ADS)

Zhang, Dong; Kushibiki, Junichi; Zou, Wei

2006-10-01

We present a theoretical model for acoustic nonlinearity measurement of dispersive specimens at high frequency. The nonlinear Khokhlov-Zabolotskaya-Kuznetsov (KZK) equation governs the nonlinear propagation in the SiO2/specimen/SiO2 multi-layer medium. The dispersion effect is considered in a special manner by introducing the frequency-dependant sound velocity in the KZK equation. Simple analytic solutions are derived by applying the superposition technique of Gaussian beams. The solutions are used to correct the diffraction and dispersion effects in the measurement of acoustic nonlinearity of cottonseed oil in the frequency range of 33-96 MHz. Regarding two different ultrasonic devices, the accuracies of the measurements are improved to ±2.0% and ±1.3% in comparison with ±9.8% and ±2.9% obtained from the previous plane wave model.

Nonlinear dynamics under varying temperature conditions of the resonating beams of a differential resonant accelerometer

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Yagang; Zega, Valentina; Su, Yan; Corigliano, Alberto

2018-07-01

In this work the nonlinear dynamic behaviour under varying temperature conditions of the resonating beams of a differential resonant accelerometer is studied from the theoretical, numerical and experimental points of view. A complete analytical model based on the Hamilton’s principle is proposed to describe the nonlinear behaviour of the resonators under varying temperature conditions and numerical solutions are presented in comparison with experimental data. This provides a novel perspective to examine the relationship between temperature and nonlinearity, which helps predicting the dynamic behaviour of resonant devices and can guide their optimal design.

Large n- and p-type thermoelectric power factors from doped semiconducting single-walled carbon nanotube thin films

DOE PAGES

MacLeod, Bradley A.; Stanton, Noah J.; Gould, Isaac E.; ...

2017-09-08

Lightweight, robust, and flexible single-walled carbon nanotube (SWCNT) materials can be processed inexpensively using solution-based techniques, similar to other organic semiconductors. In contrast to many semiconducting polymers, semiconducting SWCNTs (s-SWCNTs) represent unique one-dimensional organic semiconductors with chemical and physical properties that facilitate equivalent transport of electrons and holes. These factors have driven increasing attention to employing s-SWCNTs for electronic and energy harvesting applications, including thermoelectric (TE) generators. Here we demonstrate a combination of ink chemistry, solid-state polymer removal, and charge-transfer doping strategies that enable unprecedented n-type and p-type TE power factors, in the range of 700 μW m –1 Kmore » –2 at 298 K for the same solution-processed highly enriched thin films containing 100% s-SWCNTs. We also demonstrate that the thermal conductivity appears to decrease with decreasing s-SWCNT diameter, leading to a peak material zT ≈ 0.12 for s-SWCNTs with diameters in the range of 1.0 nm. Here, our results indicate that the TE performance of s-SWCNT-only material systems is approaching that of traditional inorganic semiconductors, paving the way for these materials to be used as the primary components for efficient, all-organic TE generators.« less

Nonlinear optical properties of organic materials V; Proceedings of the 5th Meeting, San Diego, CA, July 22-24, 1992

NASA Astrophysics Data System (ADS)

Williams, David J.

The present volume on nonlinear optical properties of organic materials discusses organic nonlinear optics, polymers for nonlinear optics, characterization of nonlinear properties, photorefractive and second-order materials, harmonic generation in organic materials, and devices and applications. Particular attention is given to organic semiconductor-doped polymer glasses as novel nonlinear media, heterocyclic nonlinear optical materials, loss measurements in electrooptic polymer waveguides, the phase-matched second-harmonic generation in planar waveguides, electrooptic measurements in poled polymers, transient effects in spatial light modulation by nonlinearity-absorbing molecules, the electrooptic effects in organic single crystals, surface acoustic wave propagation in an organic nonlinear optical crystal, nonlinear optics of astaxanthin thin films; and advanced high-temperature polymers for integrated optical waveguides. (No individual items are abstracted in this volume)

Fused electron deficient semiconducting polymers for air stable electron transport.

PubMed

Onwubiko, Ada; Yue, Wan; Jellett, Cameron; Xiao, Mingfei; Chen, Hung-Yang; Ravva, Mahesh Kumar; Hanifi, David A; Knall, Astrid-Caroline; Purushothaman, Balaji; Nikolka, Mark; Flores, Jean-Charles; Salleo, Alberto; Bredas, Jean-Luc; Sirringhaus, Henning; Hayoz, Pascal; McCulloch, Iain

2018-01-29

Conventional semiconducting polymer synthesis typically involves transition metal-mediated coupling reactions that link aromatic units with single bonds along the backbone. Rotation around these bonds contributes to conformational and energetic disorder and therefore potentially limits charge delocalisation, whereas the use of transition metals presents difficulties for sustainability and application in biological environments. Here we show that a simple aldol condensation reaction can prepare polymers where double bonds lock-in a rigid backbone conformation, thus eliminating free rotation along the conjugated backbone. This polymerisation route requires neither organometallic monomers nor transition metal catalysts and offers a reliable design strategy to facilitate delocalisation of frontier molecular orbitals, elimination of energetic disorder arising from rotational torsion and allowing closer interchain electronic coupling. These characteristics are desirable for high charge carrier mobilities. Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors.

Polaron spin echo envelope modulations in an organic semiconducting polymer

DOE PAGES

Mkhitaryan, V. V.; Dobrovitski, V. V.

2017-06-01

Here, we present a theoretical analysis of the electron spin echo envelope modulation (ESEEM) spectra of polarons in semiconducting π -conjugated polymers. We show that the contact hyperfine coupling and the dipolar interaction between the polaron and the proton spins give rise to different features in the ESEEM spectra. Our theory enables direct selective probe of different groups of nuclear spins, which affect the polaron spin dynamics. Namely, we demonstrate how the signal from the distant protons (coupled to the polaron spin via dipolar interactions) can be distinguished from the signal coming from the protons residing on the polaron sitemore » (coupled to the polaron spin via contact hyperfine interaction). We propose a method for directly probing the contact hyperfine interaction, that would enable detailed study of the polaron orbital state and its immediate environment. Lastly, we also analyze the decay of the spin echo modulation, and its connection to the polaron transport.« less

Unraveling the Semiconducting/Metallic Discrepancy in Ni 3(HITP) 2

DOE PAGES

Foster, Michael E.; Sohlberg, Karl; Allendorf, Mark D.; ...

2018-01-10

Here, Ni 3(2,3,6,7,10,11-hexaiminotriphenylene) 2 is a π-stacked layered metal–organic framework material with extended π-conjugation that is analogous to graphene. Published experimental results indicate that the material is semiconducting, but all theoretical studies to date predict the bulk material to be metallic. Given that previous experimental work was carried out on specimens containing complex nanocrystalline microstructures and the tendency for internal interfaces to introduce transport barriers, we apply DFT to investigate the influence of internal interface defects on the electronic structure of Ni 3(HITP) 2. The results show that interface defects can introduce a transport barrier by breaking the π-conjugation and/ormore » decreasing the dispersion of the electronic bands near the Fermi level. We demonstrate that the presence of defects can open a small gap, in the range of 15–200 meV, which is consistent with the experimentally inferred hopping barrier.« less

Study of organic-inorganic hetero-interfaces and electrical transport in semiconducting nanostructures

NASA Astrophysics Data System (ADS)

Wagner, Sean Robert

As the electronics industry continues to evolve and move towards functional electronic devices with increasing complexity and functionality, it becomes important to explore materials outside the regime of conventional semiconductors. Organic semiconducting small molecules have received a large amount of attention due to their high degree of flexibility, the option to perform molecular synthesis to modify their electronic and magnetic properties, and their ability to organize into highly-ordered functionalized nanostructures and thin films. Being able to form complex nanostructures and thin films with molecular precision, while maintaining the ability to tune properties through modifications in the molecular chemistry could result in vast improvements in conventional device architectures. However, before this is realized, there still remains a significant lack of understanding regarding how these molecules interact with various substrate surfaces as well as their intermolecular interactions. The interplay between these interactions can produce drastic changes in the molecular orientation and ordering at the hetero-interface, which can affect the transport properties of the molecular thin film and ultimately modify the performance of the organic electronic device. This study first focuses on the growth dynamics, molecular ordering, and molecular orientation of metal phthalocyanine (MPc) molecules, particularly on Si, a substrate which is notoriously difficult to form an organized organic thin film on due to the surface dangling bonds. By deactivating these bonds, the formation of a highly ordered organic molecular thin film becomes possible. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, low-energy electron diffraction, and density functional theory calculations, the growth evolution of MPc molecules ( M = Zn, Cu, Co) from the single molecule level to multilayered films on the deactivated Si(111)-B surface is investigated. Initial tests are

Z-scan theory for nonlocal nonlinear media with simultaneous nonlinear refraction and nonlinear absorption.

PubMed

Rashidian Vaziri, Mohammad Reza

2013-07-10

In this paper, the Z-scan theory for nonlocal nonlinear media has been further developed when nonlinear absorption and nonlinear refraction appear simultaneously. To this end, the nonlinear photoinduced phase shift between the impinging and outgoing Gaussian beams from a nonlocal nonlinear sample has been generalized. It is shown that this kind of phase shift will reduce correctly to its known counterpart for the case of pure refractive nonlinearity. Using this generalized form of phase shift, the basic formulas for closed- and open-aperture beam transmittances in the far field have been provided, and a simple procedure for interpreting the Z-scan results has been proposed. In this procedure, by separately performing open- and closed-aperture Z-scan experiments and using the represented relations for the far-field transmittances, one can measure the nonlinear absorption coefficient and nonlinear index of refraction as well as the order of nonlocality. Theoretically, it is shown that when the absorptive nonlinearity is present in addition to the refractive nonlinearity, the sample nonlocal response can noticeably suppress the peak and enhance the valley of the Z-scan closed-aperture transmittance curves, which is due to the nonlocal action's ability to change the beam transverse dimensions.

Materials growth and characterization of thermoelectric and resistive switching devices

NASA Astrophysics Data System (ADS)

Norris, Kate J.

In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

Nonlinear dynamics in the study of birdsong

NASA Astrophysics Data System (ADS)

Mindlin, Gabriel B.

2017-09-01

Birdsong, a rich and complex behavior, is a stellar model to understand a variety of biological problems, from motor control to learning. It also enables us to study how behavior emerges when a nervous system, a biomechanical device and the environment interact. In this review, I will show that many questions in the field can benefit from the approach of nonlinear dynamics, and how birdsong can inspire new directions for research in dynamics.

Applications of high average power nonlinear optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velsko, S.P.; Krupke, W.F.

1996-02-05

Nonlinear optical frequency convertors (harmonic generators and optical parametric oscillators are reviewed with an emphasis on high average power performance and limitations. NLO materials issues and NLO device designs are discussed in reference to several emerging scientific, military and industrial commercial applications requiring {approx} 100 watt average power level in the visible and infrared spectral regions. Research efforts required to enable practical {approx} 100 watt class NLO based laser systems are identified.

Spectro-spatial analysis of wave packet propagation in nonlinear acoustic metamaterials

NASA Astrophysics Data System (ADS)

Zhou, W. J.; Li, X. P.; Wang, Y. S.; Chen, W. Q.; Huang, G. L.

2018-01-01

The objective of this work is to analyze wave packet propagation in weakly nonlinear acoustic metamaterials and reveal the interior nonlinear wave mechanism through spectro-spatial analysis. The spectro-spatial analysis is based on full-scale transient analysis of the finite system, by which dispersion curves are generated from the transmitted waves and also verified by the perturbation method (the L-P method). We found that the spectro-spatial analysis can provide detailed information about the solitary wave in short-wavelength region which cannot be captured by the L-P method. It is also found that the optical wave modes in the nonlinear metamaterial are sensitive to the parameters of the nonlinear constitutive relation. Specifically, a significant frequency shift phenomenon is found in the middle-wavelength region of the optical wave branch, which makes this frequency region behave like a band gap for transient waves. This special frequency shift is then used to design a direction-biased waveguide device, and its efficiency is shown by numerical simulations.

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

PubMed

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Picosecond Laser Pulse Interactions with Metallic and Semiconducting Surfaces

DTIC Science & Technology

1990-01-31

Few Picoseconds," Nonlinear Opics and Ultrafast Phenomena, eds. R.R. Alfano and L.J. Rothberg, (Nova Publishers, NY 1990). J.K. Wang, P. Saeta, M...Etching," Materials Science and Engineering 97:325-328 (1988). Nonlinear Opics & Ultrafast Phenomena Eds. R.R. Alfano and L.J. Rothberg Publ. Nova, NY...Progress in Materials Science, ed. by J.W. Christian , P. Haasen and T.B. Massalski, Chalmers Anniversay Volume, 269, Pergamon (1981). 13. F. Spaepen

Growth of single crystals of organic salts with large second-order optical nonlinearities by solution processes for devices

NASA Technical Reports Server (NTRS)

Leslie, Thomas M.

1995-01-01

Data obtained from the electric field induced second harmonic generation (EFISH) and Kurtz Powder Methods will be provided to MSFC for further refinement of their method. A theoretical model for predicting the second-order nonlinearities of organic salts is being worked on. Another task is the synthesis of a number of salts with various counterions. Several salts with promising SHG activities and new salts will be tested for the presence of two crystalline forms. The materials will be recrystallized from dry and wet solvents and compared for SHG efficiency. Salts that have a high SHG efficiency and no tendency to form hydrates will be documented. The synthesis of these materials are included in this report. A third task involves method to aid in the growth of large, high quality single crystals by solution processes. These crystals will be characterized for their applicability in the fabrication of devices that will be incorporated into optical computers in future programs. Single crystals of optimum quality may be obtained by crystal growth in low-gravity. The final task is the design of a temperature lowering single crystal growth apparatus for ground based work. At least one prototype will be built.

Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

NASA Astrophysics Data System (ADS)

Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

2018-04-01

Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

Controlled defects in semiconducting carbon nanotubes promote efficient generation and luminescence of trions.

PubMed

Brozena, Alexandra H; Leeds, Jarrett D; Zhang, Yin; Fourkas, John T; Wang, YuHuang

2014-05-27

We demonstrate efficient creation of defect-bound trions through chemical doping of controlled sp(3) defect sites in semiconducting, single-walled carbon nanotubes. These tricarrier quasi-particles luminesce almost as brightly as their parent excitons, indicating a remarkably efficient conversion of excitons into trions. Substantial populations of trions can be generated at low excitation intensities, even months after a sample has been prepared. Photoluminescence spectroscopy reveals a trion binding energy as high as 262 meV, which is substantially larger than any previously reported values. This discovery may have important ramifications not only for studying the basic physics of trions but also for the application of these species in fields such as photonics, electronics, and bioimaging.

Itinerant magnetism in doped semiconducting β-FeSi2 and CrSi2

PubMed Central

Singh, David J.; Parker, David

2013-01-01

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting β-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds. PMID:24343332

Nonlinear dynamics of a rack-pinion-rack device powered by the Casimir force.

PubMed

Miri, MirFaez; Nekouie, Vahid; Golestanian, Ramin

2010-01-01

Using the lateral Casimir force-a manifestation of the quantum fluctuations of the electromagnetic field between objects with corrugated surfaces-as the main force transduction mechanism, a nanomechanical device with rich dynamical behaviors is proposed. The device is made of two parallel racks that are moving in the same direction and a pinion in the middle that couples with both racks via the noncontact lateral Casimir force. The built-in frustration in the device causes it to be very sensitive and react dramatically to minute changes in the geometrical parameters and initial conditions of the system. The noncontact nature of the proposed device could help with the ubiquitous wear problem in nanoscale mechanical systems.

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

PubMed Central

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wang, Zhenwei; Hedhili, M. N.; Wang, Q. X.; Alshareef, H. N.

2014-01-01

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications. PMID:24728223

Numerical simulation of incoherent optical wave propagation in nonlinear fibers

NASA Astrophysics Data System (ADS)

Fernandez, Arnaud; Balac, Stéphane; Mugnier, Alain; Mahé, Fabrice; Texier-Picard, Rozenn; Chartier, Thierry; Pureur, David

2013-11-01

The present work concerns the study of pulsed laser systems containing a fiber amplifier for boosting optical output power. In this paper, this fiber amplification device is included into a MOPFA laser, a master oscillator coupled with fiber amplifier, usually a cladding-pumped high-power amplifier often based on an ytterbium-doped fiber. An experimental study has established that the observed nonlinear effects (such as Kerr effect, four waves mixing, Raman effect) could behave very differently depending on the characteristics of the optical source emitted by the master laser. However, it has not yet been possible to determine from the experimental data if the statistics of the photons is alone responsible for the various nonlinear scenarios observed. Therefore, we have developed a numerical simulation software for solving the generalized nonlinear Schrödinger equation with a stochastic source term in order to validate the hypothesis that the coherence properties of the master laser are mainly liable for the behavior of the observed nonlinear effects. Contribution to the Topical Issue "Numelec 2012", Edited by Adel Razek.

Control of terahertz nonlinear transmission with electrically gated graphene metadevices.

PubMed

Choi, Hyun Joo; Baek, In Hyung; Kang, Bong Joo; Kim, Hyeon-Don; Oh, Sang Soon; Hamm, Joachim M; Pusch, Andreas; Park, Jagang; Lee, Kanghee; Son, Jaehyeon; Jeong, Young U K; Hess, Ortwin; Rotermund, Fabian; Min, Bumki

2017-02-20

Graphene, which is a two-dimensional crystal of carbon atoms arranged in a hexagonal lattice, has attracted a great amount of attention due to its outstanding mechanical, thermal and electronic properties. Moreover, graphene shows an exceptionally strong tunable light-matter interaction that depends on the Fermi level - a function of chemical doping and external gate voltage - and the electromagnetic resonance provided by intentionally engineered structures. In the optical regime, the nonlinearities of graphene originated from the Pauli blocking have already been exploited for mode-locking device applications in ultrafast laser technology, whereas nonlinearities in the terahertz regime, which arise from a reduction in conductivity due to carrier heating, have only recently been confirmed experimentally. Here, we investigated two key factors for controlling nonlinear interactions of graphene with an intense terahertz field. The induced transparencies of graphene can be controlled effectively by engineering meta-atoms and/or changing the number of charge carriers through electrical gating. Additionally, nonlinear phase changes of the transmitted terahertz field can be observed by introducing the resonances of the meta-atoms.

Signal detection via residence-time asymmetry in noisy bistable devices.

PubMed

Bulsara, A R; Seberino, C; Gammaitoni, L; Karlsson, M F; Lundqvist, B; Robinson, J W C

2003-01-01

We introduce a dynamical readout description for a wide class of nonlinear dynamic sensors operating in a noisy environment. The presence of weak unknown signals is assessed via the monitoring of the residence time in the metastable attractors of the system, in the presence of a known, usually time-periodic, bias signal. This operational scenario can mitigate the effects of sensor noise, providing a greatly simplified readout scheme, as well as significantly reduced processing procedures. Such devices can also show a wide variety of interesting dynamical features. This scheme for quantifying the response of a nonlinear dynamic device has been implemented in experiments involving a simple laboratory version of a fluxgate magnetometer. We present the results of the experiments and demonstrate that they match the theoretical predictions reasonably well.

Efficient control of ultrafast optical nonlinearity of reduced graphene oxide by infrared reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattachraya, S.; Maiti, R.; Das, A. C.

Simultaneous occurrence of saturable absorption nonlinearity and two-photon absorption nonlinearity in the same medium is well sought for the devices like optical limiter and laser mode-locker. Pristine graphene sheet consisting entirely of sp{sup 2}-hybridized carbon atoms has already been identified having large optical nonlinearity. However, graphene oxide (GO), a precursor of graphene having both sp{sup 2} and sp{sup 3}-hybridized carbon atom, is increasingly attracting cross-discipline researchers for its controllable properties by reduction of oxygen containing groups. In this work, GO has been prepared by modified Hummers method, and it has been further reduced by infrared (IR) radiation. Characterization of reducedmore » graphene oxide (RGO) by means of Raman spectroscopy, X-ray photoelectron spectroscopy, and UV-Visible absorption measurements confirms an efficient reduction with infrared radiation. Here, we report precise control of non-linear optical properties of RGO in femtosecond regime with increased degrees of IR reduction measured by open aperture z-scan technique. Depending on the intensity, both saturable absorption and two-photon absorption effects are found to contribute to the non-linearity of all the samples. Saturation dominates at low intensity (∼127 GW/cm{sup 2}) while two-photon absorption becomes prominent at higher intensities (from 217 GW/cm{sup 2} to 302 GW/cm{sup 2}). The values of two-photon absorption co-efficient (∼0.0022–0.0037 cm/GW for GO, and ∼0.0128–0.0143 cm/GW for RGO) and the saturation intensity (∼57 GW/cm{sup 2} for GO, and ∼194 GW/cm{sup 2} for RGO) increase with increasing reduction, indicating GO and RGO as novel tunable photonic devices. We have also explained the reason of tunable nonlinear optical properties by using amorphous carbon model.« less

Studies on third-order nonlinear optical properties of chalcone derivatives in polymer host

NASA Astrophysics Data System (ADS)

Shettigar, Seetharam; Umesh, G.; Chandrasekharan, K.; Sarojini, B. K.; Narayana, B.

2008-04-01

In this paper we present the experimental study of the third-order nonlinear optical properties of two chalcone derivatives, viz., 1-(4-methoxyphenyl)-3-(4-butyloxyphenyl)-prop-2-en-1-one and 1-(4-methoxyphenyl)-3-(4-propyloxyphenyl)-prop-2-en-1-one in PMMA host, with the prospective of reaching a compromise between good processability and high nonlinear optical properties. The nonlinear optical properties have been investigated by Z-scan technique using 7 ns laser pulses at 532 nm. The nonlinear refractive index, nonlinear absorption coefficient, magnitude of third-order susceptibility and the coupling factor have been determined. The values obtained are of the order of 10 -14 cm 2/W, 1 cm/GW, 10 -13 esu and 0.2, respectively. The molecular second hyperpolarizability for the chalcone derivatives in polymer is of the order of 10 -31 esu. Different guest/host concentrations have also been studied. The results suggest that the nonlinear properties of the chalcones have been improved when they are used as dopants in polymer matrix. The nonlinear parameters obtained are comparable with the reported values of II-VI compound semiconductors. Hence, these chalcons are a promising class of nonlinear optical dopant materials for optical device applications.

Superconducting nanowires as nonlinear inductive elements for qubits

NASA Astrophysics Data System (ADS)

Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

2011-03-01

We report microwave transmission measurements of superconducting Fabry-Perot resonators, having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonlinearity of the current-phase relationship of the nanowire. The results are explained within a nonlinear oscillator model of the Duffing oscillator, in which the nanowire acts as a purely inductive element, in the limit of low temperatures and low amplitudes. The low-quality factor sample exhibits a ``crater'' at the resonance peak at higher driving power, which is due to dissipation. We observe a hysteretic bifurcation behavior of the transmission response to frequency sweep in a sample with a higher quality factor. The Duffing model is used to explain the Duffing bistability diagram. NSF DMR-1005645, DOE DO-FG02-07ER46453.

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwen; Xue, Zhongying; Zhang, Miao

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices

DOE PAGES

Wang, Ziwen; Xue, Zhongying; Zhang, Miao; ...

2017-05-31

Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less

Electromagnetic Compatibility of Devices on Hybrid Electromagnetic Components

NASA Astrophysics Data System (ADS)

Konesev, S. G.; Khazieva, R. T.; Kirillov, R. V.; Gainutdinov, I. Z.; Kondratyev, E. Y.

2018-01-01

There is a general tendency to reduce the weight and dimensions, the consumption of conductive and electrical insulating materials, increase the reliability and energy efficiency of electrical devices. In recent years, designers have been actively developing devices based on hybrid electromagnetic components (HEMC) such as inductive-capacitive converters (ICC), voltages pulse generators (VPG), secondary power supplies (SPS), capacitive storage devices (CSD), induction heating systems (IHS). Sources of power supplies of similar electrical devices contain, as a rule, links of increased frequency and function in key (pulse) modes, which leads to an increase in electromagnetic interference (EMI). Nonlinear and periodic (impulse) loads, non-sinusoidal (pulsation) of the electromotive force and nonlinearity of the internal parameters of the source and input circuits of consumers distort the shape of the input voltage lead to an increase in thermal losses from the higher harmonic currents, aging of the insulation, increase in the weight of the power supply filter units, resonance at higher harmonics. The most important task is to analyze the operation of electrotechnical devices based on HEMC from the point of view of creating EMIs and assessing their electromagnetic compatibility (EMC) with power supply systems (PSS). The article presents the results of research on the operation of an IHS, the operation principle of a secondary power supply source of which is based on the operation of a half-bridge autonomous inverter, the switching circuit of which is made in the form of a HEMC, called the «multifunctional integrated electromagnetic component»" (MIEC).

Nonlinear optical properties of semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Ricard, Gianpiero Banfi Vittorio Degiorgio Daniel

1998-05-01

nanocrystals can be tailored by controlling the temperature or time of the treatment. The major problem is the size dispersion of the crystallites, which is intrinsic to the diffusion process. At present, this is the major source of the undesired inhomogeneous broadening of the optical transition lines of the SDGs. Efforts are at present being made to fabricate materials, SDGs included, which embed nanocrystals with a reduced spread of sizes. The interest in the nonlinear optical properties is due not only to fundamental reasons but also to possible applications for optical devices. Generally speaking, resonant nonlinearities are much larger than non-resonant nonlinearities, but they are not necessarily the most interesting for applications because materials at resonance absorb the incident radiation and also present long response times. The studies below the bandgap seem to indicate that the values of the intrinsic nonlinearities of nanocrystals in the structures which are at present available are similar to those of the bulk. New and better controlled structures are now under development and have to be tested from the viewpoint of optical nonlinearities. In several situations SDGs cannot be modelled as an ensemble of freely standing nanocrystals, with the glass matrix playing the role of an inert support. Phenomena such as trapping and darkening, which are very probably connected with electronic states at the glasssemiconductor interface, may play a role in determining the optical response. They might give rise to an extrinsic optical nonlinearity which can be even larger than the intrinsic nonlinearity. The physical processes which are involved in these extrinsic nonlinearities are poorly understood and at present being investigated.

Towards a unified description of the charge transport mechanisms in conductive atomic force microscopy studies of semiconducting polymers.

PubMed

Moerman, D; Sebaihi, N; Kaviyil, S E; Leclère, P; Lazzaroni, R; Douhéret, O

2014-09-21

In this work, conductive atomic force microscopy (C-AFM) is used to study the local electrical properties in thin films of self-organized fibrillate poly(3-hexylthiophene) (P3HT), as a reference polymer semiconductor. Depending on the geometrical confinement in the transport channel, the C-AFM current is shown to be governed either by the charge transport in the film or by the carrier injection at the tip-sample contact, leading to either bulk or local electrical characterization of the semiconducting polymer, respectively. Local I-V profiles allow discrimination of the different dominating electrical mechanisms, i.e., resistive in the transport regime and space charge limited current (SCLC) in the local regime. A modified Mott-Gurney law is analytically derived for the contact regime, taking into account the point-probe geometry of the contact and the radial injection of carriers. Within the SCLC regime, the probed depth is shown to remain below 12 nm with a lateral electrical resolution below 5 nm. This confirms that high resolution is reached in those C-AFM measurements, which therefore allows for the analysis of single organic semiconducting nanostructures. The carrier density and mobility in the volume probed under the tip under steady-state conditions are also determined in the SCLC regime.

Nonlinear-Based MEMS Sensors and Active Switches for Gas Detection.

PubMed

Bouchaala, Adam; Jaber, Nizar; Yassine, Omar; Shekhah, Osama; Chernikova, Valeriya; Eddaoudi, Mohamed; Younis, Mohammad I

2016-05-25

The objective of this paper is to demonstrate the integration of a MOF thin film on electrostatically actuated microstructures to realize a switch triggered by gas and a sensing algorithm based on amplitude tracking. The devices are based on the nonlinear response of micromachined clamped-clamped beams. The microbeams are coated with a metal-organic framework (MOF), namely HKUST-1, to achieve high sensitivity. The softening and hardening nonlinear behaviors of the microbeams are exploited to demonstrate the ideas. For gas sensing, an amplitude-based tracking algorithm is developed to quantify the captured quantity of gas. Then, a MEMS switch triggered by gas using the nonlinear response of the microbeam is demonstrated. Noise analysis is conducted, which shows that the switch has high stability against thermal noise. The proposed switch is promising for delivering binary sensing information, and also can be used directly to activate useful functionalities, such as alarming.

Characterizing the Effective Bandwidth of Nonlinear Vibratory Energy Harvesters Possessing Multiple Stable Equilibria

NASA Astrophysics Data System (ADS)

Panyam Mohan Ram, Meghashyam

In the last few years, advances in micro-fabrication technologies have lead to the development of low-power electronic devices spanning critical fields related to sensing, data transmission, and medical implants. Unfortunately, effective utilization of these devices is currently hindered by their reliance on batteries. In many of these applications, batteries may not be a viable choice as they have a fixed storage capacity and need to be constantly replaced or recharged. In light of such challenges, several novel concepts for micro-power generation have been recently introduced to harness, otherwise, wasted ambient energy from the environment and maintain these low-power devices. Vibratory energy harvesting is one such concept which has received significant attention in recent years. While linear vibratory energy harvesters have been well studied in the literature and their performance metrics have been established, recent research has focused on deliberate introduction of stiffness nonlinearities into the design of these devices. It has been shown that, nonlinear energy harvesters have a wider steady-state frequency bandwidth as compared to their linear counterparts, leading to the premise that they can used to improve performance, and decrease sensitivity to variations in the design and excitation parameters. This dissertation aims to investigate this premise by developing an analytical framework to study the influence of stiffness nonlinearities on the performance and effective bandwidth of nonlinear vibratory energy harvesters. To achieve this goal, the dissertation is divided into three parts. The first part investigates the performance of bi-stable energy harvesters possessing a symmetric quartic potential energy function under harmonic excitations and carries out a detailed analysis to define their effective frequency bandwidth. The second part investigates the relative performance of mono- and bi-stable energy harvesters under optimal electric loading

Optical mixing of microwave signals in a nonlinear semiconductor laser amplifier modulator.

PubMed

Capmany, José; Sales, Salvador; Pastor, Daniel; Ortega, Beatriz

2002-02-11

In this paper we propose and evaluate the optical mixing of RF signals by means of exploiting the nonlinearity of a SLA modulator. The results show the potential for devices with low conversion losses (and even gain) and polarization insensitivity and reduced insertion losses.

Room temperature ferromagnetic and semiconducting properties of graphene adsorbed with cobalt oxide using electrochemical method

NASA Astrophysics Data System (ADS)

Park, Chang-Soo; Lee, Kyung Su; Chu, Dongil; Lee, Juwon; Shon, Yoon; Kim, Eun Kyu

2017-12-01

We report the room temperature ferromagnetic properties of graphene adsorbed by cobalt oxide using electrochemical method. The cobalt oxide doping onto graphene was carried out in 0.1 M LiCoO2/DI-water solution. The doped graphene thin film was determined to be a single layer from Raman analysis. The CoO doped graphene has a clear ferromagnetic hysteresis at room temperature and showed a remnant magnetization, 128.2 emu/cm3. The temperature dependent conductivity of the adsorbed graphene showed the semiconducting behavior and a band gap opening of 0.12 eV.

Frequency-tunable superconducting resonators via nonlinear kinetic inductance

NASA Astrophysics Data System (ADS)

Vissers, M. R.; Hubmayr, J.; Sandberg, M.; Chaudhuri, S.; Bockstiegel, C.; Gao, J.

2015-08-01

We have designed, fabricated, and tested a frequency-tunable high-Q superconducting resonator made from a niobium titanium nitride film. The frequency tunability is achieved by injecting a DC through a current-directing circuit into the nonlinear inductor whose kinetic inductance is current-dependent. We have demonstrated continuous tuning of the resonance frequency in a 180 MHz frequency range around 4.5 GHz while maintaining the high internal quality factor Qi > 180 000. This device may serve as a tunable filter and find applications in superconducting quantum computing and measurement. It also provides a useful tool to study the nonlinear response of a superconductor. In addition, it may be developed into techniques for measurement of the complex impedance of a superconductor at its transition temperature and for readout of transition-edge sensors.

Engineered Quasi-Phase Matching for Nonlinear Quantum Optics in Waveguides

NASA Astrophysics Data System (ADS)

Van Camp, Mackenzie A.

Entanglement is the hallmark of quantum mechanics. Quantum entanglement--putting two or more identical particles into a non-factorable state--has been leveraged for applications ranging from quantum computation and encryption to high-precision metrology. Entanglement is a practical engineering resource and a tool for sidestepping certain limitations of classical measurement and communication. Engineered nonlinear optical waveguides are an enabling technology for generating entangled photon pairs and manipulating the state of single photons. This dissertation reports on: i) frequency conversion of single photons from the mid-infrared to 843nm as a tool for incorporating quantum memories in quantum networks, ii) the design, fabrication, and test of a prototype broadband source of polarization and frequency entangled photons; and iii) a roadmap for further investigations of this source, including applications in quantum interferometry and high-precision optical metrology. The devices presented herein are quasi-phase-matched lithium niobate waveguides. Lithium niobate is a second-order nonlinear optical material and can mediate optical energy conversion to different wavelengths. This nonlinear effect is the basis of both quantum frequency conversion and entangled photon generation, and is enhanced by i) confining light in waveguides to increase conversion efficiency, and ii) quasi-phase matching, a technique for engineering the second-order nonlinear response by locally altering the direction of a material's polarization vector. Waveguides are formed by diffusing titanium into a lithium niobate wafer. Quasi-phase matching is achieved by electric field poling, with multiple stages of process development and optimization to fabricate the delicate structures necessary for broadband entangled photon generation. The results presented herein update and optimize past fabrication techniques, demonstrate novel optical devices, and propose future avenues for device development

Damage Diagnosis in Semiconductive Materials Using Electrical Impedance Measurements

NASA Technical Reports Server (NTRS)

Ross, Richard W.; Hinton, Yolanda L.

2008-01-01

Recent aerospace industry trends have resulted in an increased demand for real-time, effective techniques for in-flight structural health monitoring. A promising technique for damage diagnosis uses electrical impedance measurements of semiconductive materials. By applying a small electrical current into a material specimen and measuring the corresponding voltages at various locations on the specimen, changes in the electrical characteristics due to the presence of damage can be assessed. An artificial neural network uses these changes in electrical properties to provide an inverse solution that estimates the location and magnitude of the damage. The advantage of the electrical impedance method over other damage diagnosis techniques is that it uses the material as the sensor. Simple voltage measurements can be used instead of discrete sensors, resulting in a reduction in weight and system complexity. This research effort extends previous work by employing finite element method models to improve accuracy of complex models with anisotropic conductivities and by enhancing the computational efficiency of the inverse techniques. The paper demonstrates a proof of concept of a damage diagnosis approach using electrical impedance methods and a neural network as an effective tool for in-flight diagnosis of structural damage to aircraft components.

Resonance Raman Spectroscopy of Chirality Enriched Semiconducting Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Hight Walker, A. R.; Piao, Y.; Simpson, J. R.; Lindsay, M.; Streit, J. K.; Ao, G.; Zheng, M.; Fagan, J. A.

Relative intensities of resonant Raman RBM and G modes of 11 chirality-enriched SWCNT species were established under second-order excitation. Results demonstrate an under-recognized complexity in evaluation of Raman spectra for assignment of (n,m) population distributions. Strong chiral angle and mod dependencies affect the intensity ratio of RBM/G modes and can result in misleading interpretations. We report 5 new (n,m) values for chirality-dependent G+ and G- Raman peak positions and intensity ratios, extending the available data to cover smaller diameters down to (5,4). The Raman spectral library sufficiently decouples G peaks from multiple species and enables fundamental characterization in mixed chirality samples. Our results on dispersive properties of the D modes will also be discussed. Probing defects is crucial to evaluate SWCNT quality and to understand the photophysics behind defect-induced optoelectronic features. Using high-quality, chirality-enriched semiconducting SWCNTs and tunable lasers, our results show a non-dispersive D band throughout the resonant window within the same (n,m). Our results were validated by multiple (n,m) samples and intentional covalent surface functionalization generating D peaks with increased intensity, which remain non-dispersive.

Energy gap states and tunneling currents in semiconducting graphene

NASA Astrophysics Data System (ADS)

Szczesniak, Dominik; Hoehn, Ross; Kais, Sabre

It has been predicted that when graphene is supported on a substrate or doped with foreign atom species, the inherent linear electronic dispersion of its pristine form can be strongly altered. Worthy of special attention is the situation when the interactions between graphene and the substrate or dopants lead to an opening of the finite electronic gap in the fermionic spectrum of this nano-material, and strongly influence its transport and optical properties. Herein, the fundamental electronic transport properties of such perturbed graphene are discussed in the framework of the complex band structure analysis, which not only accounts for the propagating but also the evanescent electronic states. Various scenarios responsible for the band gap opening and manipulation of its characteristics are considered, these considerations may entirely account for the aforementioned perturbations to the pristine graphene. It is shown, that the these perturbations are responsible for inducing gap states which allow electrons to directly tunnel between the conduction and valence bands in perturbed graphene. The resulting tunneling states are analyzed in a comprehensive manner, suggesting their great importance for the transport processes across graphene-based semiconducting nanostructures.

Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors.

PubMed

Gu, Jianting; Han, Jie; Liu, Dan; Yu, Xiaoqin; Kang, Lixing; Qiu, Song; Jin, Hehua; Li, Hongbo; Li, Qingwen; Zhang, Jin

2016-09-01

For the large-area fabrication of thin-film transistors (TFTs), a new conjugated polymer poly[9-(1-octylonoyl)-9H-carbazole-2,7-diyl] is developed to harvest ultrahigh-purity semiconducting single-walled carbon nanotubes. Combined with spectral and nanodevice characterization, the purity is estimated up to 99.9%. High density and uniform network formed by dip-coating process is liable to fabricate high-performance TFTs on a wafer-scale and the as-fabricated TFTs exhibit a high degree of uniformity. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stochastic nonlinear electrical characteristics of graphene

NASA Astrophysics Data System (ADS)

Jun Shin, Young; Gopinadhan, Kalon; Narayanapillai, Kulothungasagaran; Kalitsov, Alan; Bhatia, Charanjit S.; Yang, Hyunsoo

2013-01-01

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 103. It is found that graphene channel experiences the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.

Digital nonlinearity compensation in high-capacity optical communication systems considering signal spectral broadening effect.

PubMed

Xu, Tianhua; Karanov, Boris; Shevchenko, Nikita A; Lavery, Domaniç; Liga, Gabriele; Killey, Robert I; Bayvel, Polina

2017-10-11

Nyquist-spaced transmission and digital signal processing have proved effective in maximising the spectral efficiency and reach of optical communication systems. In these systems, Kerr nonlinearity determines the performance limits, and leads to spectral broadening of the signals propagating in the fibre. Although digital nonlinearity compensation was validated to be promising for mitigating Kerr nonlinearities, the impact of spectral broadening on nonlinearity compensation has never been quantified. In this paper, the performance of multi-channel digital back-propagation (MC-DBP) for compensating fibre nonlinearities in Nyquist-spaced optical communication systems is investigated, when the effect of signal spectral broadening is considered. It is found that accounting for the spectral broadening effect is crucial for achieving the best performance of DBP in both single-channel and multi-channel communication systems, independent of modulation formats used. For multi-channel systems, the degradation of DBP performance due to neglecting the spectral broadening effect in the compensation is more significant for outer channels. Our work also quantified the minimum bandwidths of optical receivers and signal processing devices to ensure the optimal compensation of deterministic nonlinear distortions.

Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

PubMed

Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

2016-03-01

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

Engineering highly organized and aligned single walled carbon nanotube networks for electronic device applications: Interconnects, chemical sensor, and optoelectronics