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Sample records for nonmagnetic iii-v semiconductor

  1. III-V arsenide-nitride semiconductor

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  2. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A. Paul; Olshavsky, Michael A.

    1996-01-01

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  3. Preparation of III-V semiconductor nanocrystals

    DOEpatents

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  4. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    NASA Astrophysics Data System (ADS)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  5. III-V semiconductor solid solution single crystal growth

    NASA Technical Reports Server (NTRS)

    Gertner, E. R.

    1982-01-01

    The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

  6. Low dimensional III-V compound semiconductor structures

    NASA Astrophysics Data System (ADS)

    Kobayashi, Nobuhiko P.

    2009-08-01

    Material incompatibilities among dissimilar group III-V compound semiconductors (III-V CSs) often place limits on combining epitaxial thin films, however low-dimensional epitaxial structures (e.g., quantum dots and nanowires) demonstrate coherent growth even on incompatible surfaces. First, InAs QDs grown by molecular beam epitaxy on GaAs are described. Two-dimensional to three-dimensional morphological transition, lateral size evolution and vertical alignment of InAs QDs in a single and multiple stacks will be illustrated. Second, InP nanowires grown on non-single crystalline surfaces by metal organic chemical vapor deposition are described with the view toward applications where III-V CSs are functionally integrated onto various material platforms.

  7. III-V aresenide-nitride semiconductor materials and devices

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  8. Spin-Seebeck Effect in III-V Based Semiconductors

    NASA Astrophysics Data System (ADS)

    Jaworski, Christopher M.; Myers, Roberto C.; Heremans, Joseph P.

    2012-02-01

    The spin-Seebeck effect has now been observed in metals^1 (NiFe), semiconductors^2 (GaMnAs), and insulators^3 (YIG). It consists of a thermally generated spin distribution that is phonon driven. Here we extend our measurements of the spin-Seebeck effect to other group III-V based magnetic semiconductors and present measurements of conventional thermomagnetic and galvanomagnetic properties as well as the spin-Seebeck effect. Work supported by the National Science Foundation, NSF-CBET-1133589 1. K. Uchida, et al., Nature 455 778 (2008) 2. C.M. Jaworski et al., Nature Materials 8 898 (2010), Phys. Rev. Lett. 106 186601 (2011) 3. K. Uchida, et al., Nature Materials 8 893 (2010)

  9. DX centers in III-V semiconductors under hydrostatic pressure

    SciTech Connect

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si{sub Ga} shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  10. Ballistic transport and luminescence in III-V semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Yi, Wei

    This thesis describes research to develop novel scanning probe methods employing ballistic electron emission to characterize nanoscale carrier transport and luminescence of quantum-confined III-V semiconductor nanostructures. First, spectroscopic and microscopic ballistic electron emission luminescence (BEEL) of an InAs quantum dot heterostructure based on three-terminal hot electron injection using a scanning tunneling microscope and a planar tunnel-junction transistor is described in detail. Second, BEEL device simulation based on one-dimensional Poisson equation and carrier drift-diffusion model is examined. Third, a scheme to integrate a photon detector directly into a BEEL heterostructure to improve the photon collection efficiency is presented. Fourth, experimental results toward development of a dual scanning probe microscopy to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film are described. Finally, some prospects of ballistic carrier spintronic devices are discussed.

  11. Spectroscopic characterization of III-V semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  12. Carbon doping of III-V compound semiconductors

    SciTech Connect

    Moll, Amy Jo

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 1014/cm2. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  13. Chemical vapour transport of III-V semiconductor materials

    NASA Astrophysics Data System (ADS)

    Davis, Mervyn Howard

    Over the temperature range 770 to 1310 K, however, two bromides compete for prominence, dependent upon temperature. In both instances, it is shown that vapour transport becomes rate limited at low temperature. Further to the chemical vapour transport of indium phosphide, the dissociative sublimation of the compound has also been investigated. Raman spectroscopy has been used to identify high temperature molecular species involved in vapour transport of III-V semiconductor materials. Supplementary work has been performed on the thermochemistry of indium monobromide. The heat of formation of indium bromide crystals has been determined using a solution calormetric technique. Differential scanning calorimetry was used to measure the heat capacity and heat of fusion, of the salt. An entrainment study of the evaporation of liquid indium monobromide was undertaken to yield a value for its heat of vaporisation. Using a statistical thermodynamic approach, the heat capacity of the vapour was calculated. Collating the information, a value for the heat of formation of indium monobromide gas at 1000 K has been calculated for use in other thermodynamic calculations.

  14. Antisites in III-V semiconductors: Density functional theory calculations

    SciTech Connect

    Chroneos, A.; Tahini, H. A.; Schwingenschlögl, U.; Grimes, R. W.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  15. Thermal conductivity of III-V semiconductor superlattices

    SciTech Connect

    Mei, S. Knezevic, I.

    2015-11-07

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  16. Resonant Raman Scattering Studies of Iii-V Semiconductor Microstructures

    NASA Astrophysics Data System (ADS)

    Delaney, Malcolm Emil

    1991-02-01

    Raman spectroscopy, an inelastic light scattering technique, explores III-V semiconductors by conveying crystal lattice structural information and by probing carrier dynamics both directly and via the electron-phonon interaction. We have examined three physical systems accentuating three aspects of Raman utility. Al_{rm x}Ga_{rm 1-x} As alloy work emphasizes electronic behavior, migration enhanced epitaxy (MEE) studies highlight structural results, and a phonon-assisted lasing project underscores electron -phonon interaction. The disorder-induced frequency difference between the dipole-forbidden and dipole-allowed longitudinal optic (LO) modes in Al_{rm x} Ga_{rm 1-x}As alloys has been investigated as a function of laser photon energy, aluminum mole fraction x, and the indirect versus direct nature of the electronic band gap. For the indirect gap alloy, the intermediate resonant state is an X-valley electron effectively localized because of its short inelastic lifetime. Raman scattering via this state is described by a calculation of the Raman susceptibility that considers the random alloy potential generated by local concentration fluctuations. MEE is a new growth technology that can order these materials in two spatial directions. In a GaSb/AlSb system we show Raman evidence of this ordering via observation of zone folded acoustic modes and compare to AlAs/GaAs results. In other work resonant Raman documents the effects on the dipole-forbidden interface mode of a periodic corrugation introduced in AlAs barrier GaAs single quantum wells. Finally, we investigate "phonon-assisted" lasing in photopumped quantum well heterostructure lasers. Resonant Raman is the natural choice to probe this system purported to have an enhanced electron-phonon interaction. For both the AlGaAs/GaAs and AlGaAs/GaAs/InGaAs structures examined, we provide evidence that indicates first order "phonon -assisted" lasing is actually renormalized band gap luminescence filtered by absorption from

  17. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  18. III-V nitride semiconductors for solar hydrogen production

    NASA Astrophysics Data System (ADS)

    Parameshwaran, Vijay; Gallinat, Chad; Enck, Ryan W.; Sampath, Anand V.; Shen, Paul H.; Kuykendall, Tevye; Aloni, Shaul; Wraback, Michael; Clemens, Bruce M.

    2012-06-01

    Photoelectrochemical cells are devices that can convert solar radiation to hydrogen gas through a water decomposition process. In this process, energy is converted from incident photons to the bonds of the generated H2 molecules. The solar radiation absorption, electron-hole pair splitting, and photoelectrolysis half reactions all occur in the vicinity of the electrode-electrolyte interface. As a result, engineering the electrode material and its interaction with the electrolyte is important in investigating and improving the energy conversion process in these devices. III-V nitride materials are promising candidates for photoelectrochemical energy applications. We demonstrate solar-to-hydrogen conversion in these cells using p-type GaN and n-type InGaN as a photocathode and photoanode material, respectively. Additionally, we demonstrate heteroepitaxial MOCVD growth of GaP on Si, enabling future work in developing GaPN as a photocathode material.

  19. Characteristics of III-V Semiconductor Devices at High Temperature

    NASA Technical Reports Server (NTRS)

    Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

    1994-01-01

    This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

  20. Strain Engineering of Epitaxially Transferred, Ultrathin Layers of III-V Semiconductor on Insulator

    DTIC Science & Technology

    2011-01-01

    patterned width of 350 nm–5 m and wet etched using a mixture of citric acid 1 g/ml in de-ionized DI H2O and hydrogen peroxide 30% at 1:20 volume...Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator Hui Fang,1,2,3 Morten Madsen,1,2,3 Carlo Carraro...10.1063/1.3537963 III-V compound semiconductors have been extensively explored in the recent years for energy-efficient and high- speed electronics due

  1. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    SciTech Connect

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  2. Dislocation effects in FinFETs for different III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Hur, Ji-Hyun; Jeon, Sanghun

    2016-04-01

    While Si-based devices are facing the limits of scaling, III-V materials, having high mobility, have attracted more and more attention. However, their advantages are obtained by ignoring the drawbacks of inevitably present dislocations. In this paper, we present a theoretical model that describes the degradation in carrier mobility caused by these inevitable charged dislocations in nanometer-sized, quantum-confined III-V compound semiconductor fin-shaped field effect transistors. We conclude that the Fermi-level pinning effect needs to be resolved to give carriers high enough energy (Fermi energy in the channel) to effectively ignore Coulomb scattering of charges at dislocations in a channel made by III-V compound semiconductors.

  3. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    SciTech Connect

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  4. Carbon films grown from plasma on III-V semiconductors

    NASA Technical Reports Server (NTRS)

    Pouch, J. J.; Warner, J. D.; Liu, D. C.

    1985-01-01

    Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.

  5. Methods for forming group III-V arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2000-01-01

    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  6. Relaxation Models of the (110) Zinc-Blende III-V Semiconductor Surfaces: Density Functional Study

    SciTech Connect

    Ye, H.; Chen, G.; Wu, Y.; Zhu, Y.; Wei, S. H.

    2008-11-01

    Clean III-V zinc-blende (110) surfaces are the most extensively studied semiconductor surface. For conventional III-V compounds such as GaAs and InP, the surface relaxation follows a bond rotation relaxation model. However, for III-nitrides recent study indicates that they follow a bond-constricting relaxation model. First-principles atom relaxation calculations are performed to explore the origin of the difference between the two groups of materials. By analyzing the individual shift trends and ionic properties of the top layer anions and cations, we attribute the difference between the conventional and nitride III-V compounds to the strong electronegativity of N, which leads to the s{sup 2}p{sup 3} pyramid bond angle to be larger than the ideal one in bulk (109.5{sup o}). The general trends of the atomic relaxation at the III-nitrides (110) surfaces are explained.

  7. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  8. Electron microscopy techniques for evaluating epitaxial and bulk III-V compound semiconductors

    SciTech Connect

    Frigeri, C.

    1996-12-01

    Electron microscopy is an important technique to study interfaces and microdefects in advanced III-V compound semiconductors. The paper briefly reviews some of the TEM methods used to this purpose and shows examples of their application to the characterization of epitaxial structures such as InGaAs/GaAs and GaAs/Ge as well as processed substrates like implanted InP.

  9. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

    SciTech Connect

    Tanaka, Masaaki; Ohya, Shinobu Nam Hai, Pham

    2014-03-15

    Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

  10. Theoretical discovery of stable structures of group III-V monolayers: The materials for semiconductor devices

    SciTech Connect

    Suzuki, Tatsuo

    2015-11-23

    Group III-V compounds are very important as the materials of semiconductor devices. Stable structures of the monolayers of group III-V binary compounds have been discovered by using first-principles calculations. The primitive unit cell of the discovered structures is a rectangle, which includes four group-III atoms and four group-V atoms. A group-III atom and its three nearest-neighbor group-V atoms are placed on the same plane; however, these connections are not the sp{sup 2} hybridization. The bond angles around the group-V atoms are less than the bond angle of sp{sup 3} hybridization. The discovered structure of GaP is an indirect transition semiconductor, while the discovered structures of GaAs, InP, and InAs are direct transition semiconductors. Therefore, the discovered structures of these compounds have the potential of the materials for semiconductor devices, for example, water splitting photocatalysts. The discovered structures may become the most stable structures of monolayers which consist of other materials.

  11. Quantification of trap densities at dielectric/III-V semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Engel-Herbert, Roman; Hwang, Yoontae; Stemmer, Susanne

    2010-08-01

    High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the Γ valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53Ga0.47As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

  12. Realization of III-V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique

    NASA Astrophysics Data System (ADS)

    Huang, Yuan-qing; Huang, Rong; Liu, Qing-lu; Zheng, Chang-cheng; Ning, Ji-qiang; Peng, Yong; Zhang, Zi-yang

    2017-01-01

    In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III-V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2Sb2Te5 (GST) and Ge2Sb1.8Bi0.2Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III-V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.

  13. Realization of III-V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique.

    PubMed

    Huang, Yuan-Qing; Huang, Rong; Liu, Qing-Lu; Zheng, Chang-Cheng; Ning, Ji-Qiang; Peng, Yong; Zhang, Zi-Yang

    2017-12-01

    In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III-V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2Sb2Te5 (GST) and Ge2Sb1.8Bi0.2Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III-V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.

  14. Band offsets of high K gate oxides on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Robertson, J.; Falabretti, B.

    2006-07-01

    III-V semiconductors have high mobility and will be used in field effect transistors with the appropriate gate dielectric. The dielectrics must have band offsets over 1eV to inhibit leakage. The band offsets of various gate dielectrics including HfO2, Al2O3, Gd2O3, Si3N4, and SiO2 on III-V semiconductors such as GaAs, InAs, GaSb, and GaN have been calculated using the method of charge neutrality levels. Generally, the conduction band offsets are found to be over 1eV, so they should inhibit leakage for these dielectrics. On the other hand, SrTiO3 has minimal conduction band offset. The valence band offsets are also reasonably large, except for Si nitride on GaN and Sc2O3 on GaN which are 0.6-0.8eV. There is reasonable agreement with experiment where it exists, although the GaAs :SrTiO3 case is even worse in experiment.

  15. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  16. III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation.

    PubMed

    Hur, Ji-Hyun; Jeon, Sanghun

    2016-02-25

    As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the applicability of these materials in nanometer-scale electronics. In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III-V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III-V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity.

  17. Fabrication and photonics properties of III-V semiconductor nanowire structures

    NASA Astrophysics Data System (ADS)

    Lin, Tzu-ging

    III-V semiconductor nanowires (NWs) have shown great potential to be building blocks for optical, optoelectronic, and electronic devices due to their special transverse confinement of electrons and photons along the nanowire axis. In addition, semiconductor nanowires with subwavelength structures exhibit strong optical Mie resonance, making them ideal platforms for realizing novel optical devices, such as extreme solar energy absorbers and broadband light trapping devices. This special 1D optical Mie resonance can be enhanced by using semiconductor-core dielectric-shell (CS) and metal-core semiconductor-shell dielectric-outer shell (CSS) nanowire heterostructures. Those advantages can be even leveraged up by utilizing nanowire arrays, attributing to the increasing optical inter-wire interaction between incident light and nanostructures. However, to form a very thin, vertical IIIV nanowire array is challenging for both conventional top-down and bottom-up approaches due to the limitation of the resolution of lithographically defined masks and thermodynamic limits of growth direction and diameter of nanowires, respectively. By employing nanoscale self-mask effects, those limitations can be circumvented. In this dissertation, we presented a novel top-down etching method to fabricate very thin, high aspect ratio and vertical III-V nanowire arrays without lithographically defined masks. The mechanism of the formation of nanowire arrays was proposed and verified by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in this work. Optical characterizations, such as optical reflectance and Raman spectroscopy, were also performed on those nanowire arrays. By employing those nanowire arrays, broadband light trapping can be achieved. Besides, the effects of contact electrodes, such as indium tin oxide (ITO), silver, and copper, on semiconductor nanowire solar cell devices with different bandgaps were also investigated with a focus on optical

  18. Seebeck Enhancement Through Miniband Conduction in III-V Semiconductor Superlattices at Low Temperatures

    NASA Astrophysics Data System (ADS)

    Bahk, Je-Hyeong; Sadeghian, Ramin Banan; Bian, Zhixi; Shakouri, Ali

    2012-06-01

    We present theoretically that the cross-plane Seebeck coefficient of InGaAs/InGaAlAs III-V semiconductor superlattices can be significantly enhanced through miniband transport at low temperatures. The miniband dispersion curves are calculated by self-consistently solving the Schrödinger equation with the periodic potential, and the Poisson equation taking into account the charge transfer between the two layers. Boltzmann transport in the relaxation-time approximation is used to calculate the thermoelectric transport properties in the cross-plane direction based on the modified density of states and group velocity. It is found that the cross-plane Seebeck coefficient can be enhanced more than 60% over the bulk values at an equivalent doping level at 80 K when the Fermi level is aligned at an edge of the minibands. Other thermoelectric transport properties are also calculated and discussed to further enhance the thermoelectric power factor.

  19. Density-functional calculations of carbon doping in III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Latham, C. D.; Jones, R.; Öberg, S.; Briddon, P. R.

    2001-04-01

    This article reports the results of investigations based on local-density-functional theory into the relative formation energies for single substitutional carbon atoms in nine III-V compound semiconductors. The calculations are performed using a supercell formalism derived from the AIMPRO real-space cluster method. Only a very slight trend is discernible down the periodic table. When a metal atom is replaced with carbon, it is energetically least favorable in the phosphides, very marginally lower energy in the arsenides, and ~0.5-0.7 eV lower in the antimonides. The situation is approximately reversed when a P, As, or Sb atom is substituted by a C atom: for the In compounds the energy is ~0.4-0.8 eV higher than for the Al and Ga compounds.

  20. Electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Mawrie, Alestin; Halder, Pushpajit; Ghosh, Barun; Ghosh, Tarun Kanti

    2016-09-01

    We study electrical and optical conductivities of hole gas in p-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various impurity potentials, Drude weight, and optical conductivity in terms of the Luttinger parameters γ1 and γ2. The back scattering is completely suppressed as a result of the helicity conservation of the heavy and light hole states. The energy dependence of the relaxation time for the hole states is different from the Brooks-Herring formula for electron gas in n-doped semiconductors. We find that the inverse relaxation time of heavy holes is much less than that of the light holes for Coulomb-type and Gaussian-type impurity potentials and vice-versa for a short-range impurity potential. The Drude conductivity increases non-linearly with the increase in the hole density. The exponent of the density dependence of the conductivity is obtained in the Thomas-Fermi limit. The Drude weight varies linearly with the density even in the presence of the spin-orbit coupling. The finite-frequency optical conductivity goes as √{ ω} , and its amplitude strongly depends on the Luttinger parameters. The Luttinger parameters can be extracted from the optical conductivity measurement.

  1. Mapping the effective mass of electrons in III-V semiconductor quantum confined structures

    NASA Astrophysics Data System (ADS)

    Gass, M. H.; Papworth, A. J.; Beanland, R.; Bullough, T. J.; Chalker, P. R.

    2006-01-01

    The electron effective mass me* can be calculated from the Kramers-Kronig transformation of electron energy loss spectra (EELS) for III-V semiconductor materials. The mapping capabilities of a scanning transmission electron microscope, equipped with a GatanEnfina™ EELS system are exploited to produce maps showing the variation of me* with nanometer scale resolution for a range of semiconductors. The analysis was carried out on three material systems: a GaInNAs quantum well in a GaAs matrix; InAs quantum dots in a GaAs matrix, and bulk wurzitic GaN. Values of me* were measured as ˜0.07m0 for GaAs and 0.183m0 for GaN, both in excellent agreement with the literature. It has also been shown that the high frequency dielectric constant can be calculated using the Kramers-Kronig methodology. When the high frequency dielectric constant is incorporated into the calculations a much more accurate visual representation of me* is displayed in the maps.

  2. Electroless Deposition of III-V Semiconductor Nanostructures from Ionic Liquids at Room Temperature.

    PubMed

    Lahiri, Abhishek; Borisenko, Natalia; Olschewski, Mark; Gustus, René; Zahlbach, Janine; Endres, Frank

    2015-09-28

    Group III-V semiconductor nanostructures are important materials in optoelectronic devices and are being researched in energy-related fields. A simple approach for the synthesis of these semiconductors with well-defined nanostructures is desired. Electroless deposition (galvanic displacement) is a fast and versatile technique for deposition of one material on another and depends on the redox potentials of the two materials. Herein we show that GaSb can be directly synthesized at room temperature by galvanic displacement of SbCl3 /ionic liquid on electrodeposited Ga, on Ga nanowires, and also on commercial Ga. In situ AFM revealed the galvanic displacement process of Sb on Ga and showed that the displacement process continues even after the formation of GaSb. The bandgap of the deposited GaSb was 0.9±0.1 eV compared to its usual bandgap of 0.7 eV. By changing the cation in the ionic liquid, the redox process could be varied leading to GaSb with different optical properties.

  3. Bismuth-induced surface structure and morphology in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Duzik, Adam J.

    2015-04-01

    Bi is the largest group V element and has a number of advantages in III-V semiconductor properties, such as bandgap reduction, spin-orbit coupling, a preserved electron mobility over III-V-N materials, and nearly ideal surfactant properties resulting in a surface smoothing effect on GaAs. However, the mechanism for this behavior is not well understood. Insight on the mechanism is obtained through study of the Bi-terminated GaAs surface morphology and atomic reconstructions produced via molecular beam epitaxy (MBE). Experimental scanning tunneling microscopy (STM) characterization of the Bi/GaAs surface reveal disordered (1x3), (2x3), and (4x3) reconstructions, often sharing the same reflective high-energy electron diffraction (RHEED) patterns. Roughness on the micron length scale decreases as the step widen, attributed to the concurrent increase of opposite direction step edges on the nanometer length scale. Corresponding cluster expansion, density functional theory (DFT), and Monte Carlo simulations all point to the stability of the disordered (4x3) reconstruction at finite temperature as observed in experimental STM. The effects of incorporated Bi are determined through epitaxial GaSbBi growth on GaSb with various Ga:Sb:Bi flux ratios. Biphasic surface droplets are observed with sub-droplets, facets, and substrate etching. Despite the rough growth front, X-ray diffraction (XRD) and Rutherford backscatter (RBS) measurements show significant Bi incorporation of up to 12% into GaSb, along with a concurrent increase of background As concentration. This is attributed to a strain auto-compensation effect. Bi incorporation of up to 10% is observed for the highest Bi fluxes while maintaining low surface droplet density.

  4. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    NASA Astrophysics Data System (ADS)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  5. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    NASA Astrophysics Data System (ADS)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  6. Novel planarization and passivation in the integration of III-V semiconductor devices

    NASA Astrophysics Data System (ADS)

    Zheng, Jun-Fei; Hanberg, Peter J.; Demir, Hilmi V.; Sabnis, Vijit A.; Fidaner, Onur; Harris, James S., Jr.; Miller, David A. B.

    2004-06-01

    III-V semiconductor devices typically use structures grown layer-by-layer and require passivation of sidewalls by vertical etching to reduce leakage current. The passivation is conventionally achieved by sealing the sidewalls using polymer and the polymer needs to be planarized by polymer etch-back method to device top for metal interconnection. It is very challenging to achieve perfect planarization needed for sidewalls of all the device layers including the top layer to be completely sealed. We introduce a novel hard-mask-assisted self-aligned planarization process that allows the polymer in 1-3 μm vicinity of the devices to be planarized perfectly to the top of devices. The hard-mask-assisted process also allows self-aligned via formation for metal interconnection to device top of μm size. The hard mask is removed to expose a very clean device top surface for depositing metals for low ohmic contact resistance metal interconnection. The process is robust because it is insensitive to device height difference, spin-on polymer thickness variation, and polymer etch non-uniformity. We have demonstrated high yield fabrication of monolithically integrated optical switch arrays with mesa diodes and waveguide electroabsorption modulators on InP substrate with yield > 90%, high breakdown voltage of > 15 Volts, and low ohmic contact resistance of 10-20 Ω.

  7. High Resolution Double Crystal X-Ray Diffractometry and Topography of Iii-V Semiconductor Compounds

    NASA Astrophysics Data System (ADS)

    Cockerton, Simon

    Available from UMI in association with The British Library. Requires signed TDF. Double crystal diffractometry and topography are now routinely used in many laboratories for the inspection of epitaxially grown devices. However the trend towards thinner layers and more complex structures requires the continual development of novel approaches using these techniques. This thesis is concerned with the development of these approaches to study the structural uniformity of semiconductor materials. The uniformity of large single crystals of lithium niobate has been studied using synchrotron radiation and double crystal X-ray topography. This study has shown a variety of contrast features including low angle grain boundaries and non-uniform dislocation densities. The abruptness of an interface between a layer and the underlying substrate has been studied using glancing incidence asymmetric reflections. Comparisons to simulated structures revealed that a closer match was achieved by the inclusion of a highly mismatched interfacial layer. This study illustrates the need for careful comparison between experimental and simulated rocking curves as different structures may produce very similar rocking curves. A double crystal topographic study of a AlGaAs laser structure revealed X-ray interference fringes. These are shown to be produced from the interaction of two simultaneously diffracting layers separated by a thin layer. Possible formation mechanisms have been discussed showing that these fringes are capable of revealing changes in the active layer at the atomic level. A novel approach has also been developed using synchrotron radiation to study the non -stoichiometry of GaAs. This approach uses the quasi-forbidden reflections which are present in III-V semiconductors due to the differences in the atomic scattering factors. This study has also discussed the behaviour of strong and weak reflections in the region of absorption edges and modelled their behaviour using the

  8. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    PubMed

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (<100 nm) particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  9. The Electronic and Electro-Optic Future of III-V Semiconductor Compounds.

    DTIC Science & Technology

    1978-12-01

    An assessment of material development of III-V compounds for electro - optic , microwave and millimeter wave technology is presented. Questions concerning material selection, needs and processing is addressed. (Author)

  10. Growth and Defect Characterization of Quantum Dot-Embedded III-V Semiconductors for Advanced Space Photovoltaics

    DTIC Science & Technology

    2014-05-15

    provide, which could be useful in the future development of intermediate band solar cell (IBSC) devices. Defect spectroscopy was also performed on OMVPE...grown InAs/GaAs QD-embedded solar cells . A large increase in mid-gap trap density surrounding the embedded QDs was found and points to a potentially... cell calibration, high altitude solar cell calibration, high altitude balloon solar cell calibration, III-V compound semiconductors, solar cells

  11. The role of strain in the surface structures of III-V alloyed semiconductor films

    NASA Astrophysics Data System (ADS)

    Bickel, Jessica E.

    As length scales continue to decrease, it is vital to understand the fundamental physical parameters governing surfaces and surface interactions. In semiconductors particularly, surface reconstructions are known to impact film growth, bulk atomic ordering and the development of interfacial structure, all of which can drastically impact device growth. While the parameters that determine surface reconstructions in homoepitaxially grown films are well known and understood, those that impact alloy film growth are less studied. This work examines the impact of strain on alloy surface reconstructions, using the III-V semiconductors as a model system for any covalently bonded crystal structure. The presence of surface reconstruction coexistence in both mixed cation and mixed anion systems suggests that localized strain fields on alloy surfaces stabilize elastic relaxation at boundaries, resulting in more complex surface structures than those seen on binary, unstrained films. Atomic size mismatch strain is shown to induce an ordering in alloyed surface reconstructions that is not seen in the non-alloyed constituent surfaces. Lattice mismatch strain is shown to both stabilize new reconstructions not common to the homoepitaxial system and to induce surface reconstruction coexistence on alloy surfaces. The supplied flux of material is shown to affect the kinetics of transformation between the two coexisting surface reconstructions and an incorporation model for material on the alloy surface is developed. The effects of strained surface reconstructions on subsequent film growth is explored and it is shown that identical films grown on two different surfaces have very different strain relaxation profiles, surface topographies and defect structures. The strain fields of surface reconstructions and defects are also shown to interact which may have an impact on the insertion of dislocations in these films. Combined together, this deep understanding of the role that alloy induced

  12. Second-order optical susceptibility in doped III-V piezoelectric semiconductors in the presence of a magnetostatic field

    NASA Astrophysics Data System (ADS)

    Lal, B.; Aghamkar, P.; Kumar, S.; Kashyap, M. K.

    2011-02-01

    A detailed analytical investigation of second-order optical susceptibility has been made in moderately doped III-V weakly piezoelectric semiconductor crystal, viz. n-InSb, in the absence and presence of an external magnetostatic field, using the coupled mode theory. The second-order optical susceptibility arises from the nonlinear interaction of a pump beam with internally generated density and acoustic perturbations. The effect of doping concentration, magnetostatic field and pump intensity on second-order optical susceptibility of III-V semiconductors has been studied in detail. The numerical estimates are made for n-type InSb crystals duly shined by pulsed 10.6 μm CO2 laser and efforts are made towards optimising the doping level, applied magnetostatic field and pump intensity to achieve a large value of second-order optical susceptibility and change of its sign. The enhancement in magnitude and change of sign of second-order optical susceptibility, in weakly piezoelectric III-V semiconductor under proper selection of doping concentration and externally applied magnetostatic field, confirms the chosen nonlinear medium as a potential candidate material for the fabrication of nonlinear optical devices. In particular, at B 0 = 14.1 T, the second-order susceptibility was found to be 3.4 × 10-7 (SI unit) near the resonance condition.

  13. Metabolomic and proteomic biomarkers for III-V semiconductors: chemical-specific porphyrinurias and proteinurias.

    PubMed

    Fowler, Bruce A; Conner, Elizabeth A; Yamauchi, Hiroshi

    2005-08-07

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  14. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    SciTech Connect

    Fowler, Bruce A. . E-mail: bxf9@cdc.gov; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-08-07

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  15. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  16. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  17. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  18. III-V compound semiconductor growth on silicon via germanium buffer and surface passivation for CMOS technology

    NASA Astrophysics Data System (ADS)

    Choi, Donghun

    Integration of III-V compound semiconductors on silicon substrates has recently received much attention for the development of optoelectronic and high speed electronic devices. However, it is well known that there are some key challenges for the realization of III-V device fabrication on Si substrates: (i) the large lattice mismatch (in case of GaAs: 4.1%), and (ii) the formation of antiphase domain (APD) due to the polar compound semiconductor growth on non-polar elemental structure. Besides these growth issues, the lack of a useful surface passivation technology for compound semiconductors has precluded development of metal-oxide-semiconductor (MOS) devices and causes high surface recombination parasitics in scaled devices. This work demonstrates the growth of high quality III-V materials on Si via an intermediate Ge buffer layer and some surface passivation methods to reduce interface defect density for the fabrication of MOS devices. The initial goal was to achieve both low threading dislocation density (TDD) and low surface roughness on Ge-on-Si heterostructure growth. This was achieved by repeating a deposition-annealing cycle consisting of low temperature deposition + high temperature-high rate deposition + high temperature hydrogen annealing, using reduced-pressure chemical-vapor deposition (CVD). We then grew III-V materials on the Ge/Si virtual substrates using molecular-beam epitaxy (MBE). The relationship between initial Ge surface configuration and antiphase boundary formation was investigated using surface reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) image analysis. In addition, some MBE growth techniques, such as migration enhanced epitaxy (MEE) and low temperature GaAs growth, were adopted to improve surface roughness and solve the Ge self-doping problem. Finally, an Al2O3 gate oxide layer was deposited using atomic-layer-deposition (ALD) system after HCl native oxide etching and ALD in-situ pre

  19. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    NASA Astrophysics Data System (ADS)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  20. Synthesis and Characterization of Mixed III-V and II-VI Semiconductor Monomers Included in the Borate Sodalite Analogue

    DTIC Science & Technology

    1993-04-30

    Characterization of Mixed III-V and .I-VI N00014-k0-J-er59Semiconductor Monomrers Included in the Borate Sodalite Analogue ..... C LL AU N.𔃾 K.L. Moran...dependent static and magic angle spinning and solid state NMR experiments. Inclusion of GaP within the borate sodalite analogue results in the formation of an...properties of compounds can be dramatically altered by inclusion into the sodalite framework, which is one of several reasons why this zeolite structure

  1. Examination of the Ion Beam Response of III-V Semiconductor Substrates

    NASA Astrophysics Data System (ADS)

    Grossklaus, Kevin A.

    This work examines the response of the III-V materials to ion beam irradiation in a series of four experimental studies and describes the observed results in terms of the fundamental materials processes and properties that control ion-induced change in those compounds. Two studies investigate the use of Ga+ focused ion beam (FIB) irradiation of III-V substrate materials to create nanostructures. In the first, the creation of FIB induced group III nanodots on GaAs, InP, InAs, and AlAs is studied. The analysis of those results in terms of basic material properties and a simple nanodot growth model represents the first unified investigation of the fundamental processes that drive the nanodot forming behavior of the III-V compounds. The second nanostructure formation study reports the discovery and characterization of unique spike-like InAs nanostructures, termed "nanospikes," which may be useful for nanoscale electronic or thermoelectric applications. A novel method for controlling nanospike formation using InAs/InP heterostructures and film pre-patterning is developed, and the electrical properties of these ion erosion created nanostructures are characterized by in-situ TEM nanoprobe testing in a first-of-its-kind examination. The two remaining studies examine methods for using ion beam modification of III-V substrates to accommodate lattice-mismatched film growth with improved film properties. The first examines the effects of film growth on a wide range of different FIB created 3-D substrate patterns, and finds that 3-D surface features and patterns significantly alter film morphology and that growth on or near FIB irradiated regions does not improve film threading defect density. The second substrate modification study examines broad beam ion pre-implantation of GaAs wafers before InGaAs film growth, and is the first reported study of III-V substrate pre-implantation. Ar + pre-implantation was found to enhance the formation of threading defects in InGaAs films and

  2. Fully first-principles sX-LDA calculations of excited states and optical properties of III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Hyon Rhim, Sung; Kim, Miyoung; Freeman, A. J.

    2004-03-01

    III-V semiconductors are important for their extensive applications as optical devices such as laser diodes and infrared sensors. Optical properties, [ɛ_2(ω), n, k, R, and α], of III-V semiconductors (InAs, InSb, GaSb, and AlSb), are investigated using our highly precise full-potential linearized augmented plane wave(E.Wimmer,H.Krakauer, M.Weinert, A.J.Freeman, PRB,24), 864 (1981)(FLAPW) method with the screened-exchange local density approximation( R.Asahi,W.Mannstadt, A.J.Freeman,PRB,59), 7486 (1999)(sX-LDA) solved self-consistently and with spin-orbit coupling included. The imaginary part of the dielectric constant, ɛ_2(ω) is calculated using the longitudinal expression with full e^iqotr matrix elements, due to the nonlocality of the potential in the sX-LDA method(R.Del Sole, R.Girlanda, PRB 48), 11789 (1993). The structure of the ɛ_2(ω)'s are analyzed with band structures and consideration of interband transitions. The result shows good agreement of the peak positions in ɛ_2(ω) with experiment( D.E.Aspnes,A.A.Studna, PRB 27), 985 (1983) .

  3. DX centers in III-V semiconductors under hydrostatic pressure. [GaAs:Si; InP:S

    SciTech Connect

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si[sub Ga] shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity.

  4. Integrating III-V compound semiconductors with silicon using wafer bonding

    NASA Astrophysics Data System (ADS)

    Zhou, Yucai

    2000-12-01

    From Main Street to Wall Street, everyone has felt the effects caused by the Internet revolution. The Internet has created a new economy in the New Information Age and has brought significant changes in both business and personal life. This revolution has placed strong demands for higher bandwidth and higher computing speed due to high data traffic on today's information highway. In order to alleviate this problem, growing interconnection bottlenecks in digital designs have to be solved. The most feasible and practical way is to replace the conventional electrical interconnect with an optical interconnect. Since silicon does not have the optical properties necessary to accommodate these optical interconnect requirements, III-V based devices, most of which are GaAs-based or InP-based, must be intimately interconnected with the Si circuit at chip level. This monolithic integration technology enables the development of both intrachip and interchip optical connectors to take advantage of the enormous bandwidth provided by both high-performance very-large-scale integrated (VLSI) circuits and allied fiber and free-space optical technologies. However, lattice mismatch and thermal expansion mismatches between III-V materials and Si create enormous challenges for developing a feasible technology to tackle this problem. Among all the available approaches today, wafer bonding distinguishes itself as the most promising technology for integration due to its ability to overcome the constraints of both lattice constant mismatch and thermal expansion coefficient differences and even strain due to the crystal orientation. We present our development of wafer bonding technology for integrating III-V with Si in my dissertation. First, the pick-and-place multiple-wafer bonding technology was introduced. Then we systematically studied the wafer bonding of GaAs and InP with Si. Both high temperature wafer fusion and low/room temperature (LT/RT) wafer bonding have been investigated for

  5. High-coherence semiconductor lasers based on integral high-Q resonators in hybrid Si/III-V platforms.

    PubMed

    Santis, Christos Theodoros; Steger, Scott T; Vilenchik, Yaakov; Vasilyev, Arseny; Yariv, Amnon

    2014-02-25

    The semiconductor laser (SCL) is the principal light source powering the worldwide optical fiber network. The ever-increasing demand for data is causing the network to migrate to phase-coherent modulation formats, which place strict requirements on the temporal coherence of the light source that no longer can be met by current SCLs. This failure can be traced directly to the canonical laser design, in which photons are both generated and stored in the same, optically lossy, III-V material. This leads to an excessive and large amount of noisy spontaneous emission commingling with the laser mode, thereby degrading its coherence. High losses also decrease the amount of stored optical energy in the laser cavity, magnifying the effect of each individual spontaneous emission event on the phase of the laser field. Here, we propose a new design paradigm for the SCL. The keys to this paradigm are the deliberate removal of stored optical energy from the lossy III-V material by concentrating it in a passive, low-loss material and the incorporation of a very high-Q resonator as an integral (i.e., not externally coupled) part of the laser cavity. We demonstrate an SCL with a spectral linewidth of 18 kHz in the telecom band around 1.55 μm, achieved using a single-mode silicon resonator with Q of 10(6).

  6. Atomic-scale studies of nanometer-sized graphene on III-V semiconductors using scanning tunneling microscopy.

    NASA Astrophysics Data System (ADS)

    He, Kevin; Koepke, Justin; Lyding, Joseph

    2009-03-01

    We utilize the Dry Contact Transfer (DCT) method [1] to deposit nanometer-sized, monolayer graphene flakes, in situ, onto cleaved GaAs (110) and InAs (110) surfaces. The flakes were characterized using a homebuilt, room temperature, ultrahigh-vacuum scanning tunneling microscope. We report on the apparent electronic semi-transparency of the monolayer graphene flakes, such that the underlying III-V semiconductor lattice is revealed in our topographic images. This transparency is strongly dependent on the applied sample bias, similar to results seen on SiC (1000) for large sheets of graphene grown via thermal desorption [2]. [3pt] [1] P.M. Albrecht and J.W. Lyding, APL 83, 5029 (2003). [0pt] [2] G.M. Rutter et al, Phys. Rev. B 76, 235416 (2007).

  7. Semiconductor structural damage attendant to contact formation in III-V solar cells

    NASA Technical Reports Server (NTRS)

    Fatemi, Navid S.; Weizer, Victor G.

    1991-01-01

    In order to keep the resistive losses in solar cells to a minimum, it is often necessary for the ohmic contacts to be heat treated to lower the metal-semiconductor contact resistivity to acceptable values. Sintering of the contacts, however can result in extensive mechanical damage of the semiconductor surface under the metallization. An investigation of the detailed mechanisms involved in the process of contact formation during heat treatment may control the structural damage incurred by the semiconductor surface to acceptable levels, while achieving the desired values of contact resistivity for the ohmic contacts. The reaction kinetics of sintered gold contacts to InP were determined. It was found that the Au-InP interaction involves three consecutive stages marked by distinct color changes observed on the surface of the Au, and that each stage is governed by a different mechanism. A detailed description of these mechanisms and options to control them are presented.

  8. The Surface Structure, Scattering Losses and Schottky Barrier Model of III-V Compound Semiconductors.

    DTIC Science & Technology

    1982-12-21

    30. S. M. Sze, in : PHYSICS OF SEMICONDUCTOR, (2nd Edition, John Willey & Sons, Inc. 1981). 31. A. R. Lubinsky, B. W. Lee, and P. Mark, Phys. Rev...R. J. Meyer, A. Paton, P. Mark, A. Kahn, E. So and J. L. Yeh, J. Vac Sci Technol. 16, 1252 (1979). 4 59. J. Bardeen , Phys; Rev. 71, 717 (1947).. 5

  9. Semiconductor quantum well lasers and related optoelectronic devices on silicon, III-V

    NASA Astrophysics Data System (ADS)

    Holonyak, N., Jr.; Hsieh, K. C.; Stillman, G. E.

    1989-06-01

    Although an ultimate goal of this work is to achieve long term reliable laser operation of Al(x)Ga(1-x)As-GaAs quantum well heterostructures (QWH's), or similar III-V QWH's, grown on Si, this has proven to be a formidable enough problem that to the best of our knowledge no one has exceeded the results we reported in 1987 and 1988. This problem is of such dimensions that it may not be solved for as much as 10 years, or even more. All we know so far is that continuous (CW) 300 K Al(x)Ga(1-x)As-GaAs QWH lasers can be grown on Si, and that, indeed, the heat sinking of an Al(x)Ga(1-x)As-GaAs QWH laser on Si is better than a similar laser on a GaAs substrate. Nevertheless, the problem of growing better versions of these devices (i.e., long-lived high performance CW 300 K lasers on Si) has run into the fundamental issue of the large GaAs-Si lattice and thermal expansion mismatch, and hence the built-in difficulty in reducing the defects guaranteed by mismatch. Accordingly, and as much as we have worked further on the problem of Al(x)Ga(1-x)As-GaAs QWH lasers on Si, we have worked as hard on other QWH laser problems, as well as a impurity-induced layer disordering (or layer intermixing, IILD) and its application in laser devices. We briefly describe this work below and append the titles and abstracts of the papers we have published on laser studies and IILD.

  10. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation.

    PubMed

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-19

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  11. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    NASA Astrophysics Data System (ADS)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  12. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    PubMed Central

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  13. Study of magnetism in dilute magnetic semiconductors based on III-V nitrides

    NASA Astrophysics Data System (ADS)

    Rajaram, Rekha

    Spin based electronics, commonly referred to as "spintronics", seeks to expand the functionalities of microelectronic devices by introducing the ability to manipulate the carrier's spin, in addition to or instead of its charge. Key steps in spintronic devices include the injection, manipulation and detection of the carrier's spin. Metal-based spintronic devices such as spin valves have already found applications in high capacity hard disk drive read heads and have potential in non-volatile solid state memories. However, in order to realize the full potential of spintronics, spin manipulation must be introduced into semiconductor devices. This in turn, requires the development of magnetic semiconductors. Dilute magnetic semiconductors (DMS) are a class of magnetic semiconductors in which a fraction of the cations are substitutionally replaced by magnetic ions. The exchange interaction between the spin of the dopant atoms and the carriers in the semiconductor host is expected to bring about global ferromagnetic order in the entire lattice in these materials. The search for novel DMS candidates has been driven by two cardinal requirements - a material system with well-developed growth technology, and a high Curie temperature. In this work, we have investigated the growth and characteristics of one such promising candidate, transition-metal doped InN. InN films were deposited on c-sapphire substrates by molecular beam epitaxy, employing GaN underlayers to reduce the lattice mismatch between the film and substrate. The films were doped from 0.1-6% Cr with no noticeable trace of crystalline secondary phases detected by X-ray diffraction. However, Mn-doping led to segregation of manganese nitride. Hall effect measurements revealed n-type behavior in both undoped as well as Cr-doped films. A magnetic hysteresis, with a small remanence and coercivity was observed in Cr:InN up to room temperature, confirming long-range magnetic order in this material. X-ray magnetic circular

  14. Photoelectrochemical Characterization of Iii-V Semiconductors Utilizing Impedance Spectroscopy Methods

    NASA Astrophysics Data System (ADS)

    Kocha, Shyam Sunder

    The thermodynamic reversible potential required to decompose water into hydrogen and oxygen is about 1.23 eV. An overpotential of 100-400 mV may have to be overcome at the semiconductor/electrolyte interface to successfully photo-electrolyze water. An optimal bandgap of a semiconductor utilized in photoelectrolysis of water would be in the range 1.6-2.0 eV. Single crystal GaInP_2 , (Eg = 1.83 eV) and Ga_{rm 1-x}Al_{rm x} As (Eg = 1.5-1.8 eV), Ga_{rm 1-x}Al_{rm x} As with embeded single quantum wells of GaAs, Ga _{rm x}As _{rm 1-x}P, Ga_ {rm x}Al_{rm y}In1-x-yP, GaAs and InP grown epitaxially in a MOCVD reactor (at NREL) were the subject of this study since, by virtue of their bandgaps, they show promise of being capable of photodecomposition of water in the absence of an external bias. These materials were studied when immersed in various aqueous electrolyte solutions of different pHs. Electrochemical impedance spectroscopy (EIS) was used to investigate the semiconductor-electrolyte interface, which was modeled using an equivalent electrical circuit analog that represented the physical phenomena. Based on the space-charge layer capacitance, the flat-band potential and hence, the corresponding position of band edges relative to the hydrogen and oxygen redox levels were determined. Capacitance measurements, current-voltage measurements and photocurrent spectroscopy were also carried out on these interfaces. Based on favorable results obtained for GaInP_2 , a tandem cell structure consisting of GaInP _2 and GaAs was utilized in photoelectrolysis of water in acidic solutions and efficiencies of 7-14% reported.

  15. Orthogonal and Non-Orthogonal Tight Binding Parameters for III-V Semiconductors Nitrides

    NASA Astrophysics Data System (ADS)

    Martins, A. S.; Fellows, C. E.

    2016-12-01

    A simulated annealing (SA) approach is employed in the determination of different tight binding (TB) sets of parameters for the nitride semiconductors AlN, GaN and InN, as well their limitations and potentialities are also discussed. Two kinds of atomic basis set are considered: (i) the orthogonal sp 3 s∗ with interaction up to second neighbors and (ii) a spd non-orthogonal set, with the Hamiltonian matrix elements calculated within the Extended Hückel Theory (EHT) prescriptions. For the non-orthogonal method, TB parameters are given for both zincblend and wurtzite crystalline structures.

  16. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

    SciTech Connect

    Robertson, J.; Guo, Y.; Lin, L.

    2015-03-21

    The paper describes the reasons for the greater difficulty in the passivation of interface defects of III–V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.

  17. Cathodic and anodic photocurrent enhancement at III-V semiconductor electrodes

    SciTech Connect

    Gomes, W.P.; Theuwis, A.; Vermeir, I.E.

    1996-10-01

    The phenomenon of limiting photocurrent enhancement at semiconductor electrodes due to the addition of redox components to the solution is known since many years. In the present contribution, this effect has been studied on the systems GaAs/HIO{sub 3} InP/HIO{sub 3} and InP/H{sub 2}O{sub 2}. The cathodic enhancement observed at p-type electrodes for the three systems can be interpreted in the usual way, i.e. by assuming that the electroreduction of the oxidizing agent involves not only minority carrier capture but also majority carrier injection steps. In the case of GaAs/HIO{sub 3}, up to five injection steps may be involved. In contrast, anodic current-doubling at n-InP by HIO{sub 3} and by H{sub 2}O{sub 2} is attributed to the influence of the oxidizing agent upon the photoelectrochemical dissolution of the semiconductor. Reaction mechanisms for these processes are proposed on the basis of combined current-potential, IMPS and etch rate results.

  18. Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Deng, Hui-Xiong; Luo, Jun-Wei; Wei, Su-Huai

    2015-02-01

    Using the first-principles density functional theory method, we systematically investigate the structural and electronic properties of heterovalent interfaces of the lattice-matched II-VI/III-V semiconductors, i.e., ZnTe/GaSb, ZnSe/GaAs, ZnS/GaP, and ZnO/GaN. We find that, independent of the orientations, the heterovalent superlattices with period n =6 are energetically more favorable to form nonpolar interfaces. For the [001] interface, the stable nonpolar interfaces are formed by mixing 50% group-III with 50% group-II atoms or by mixing 50% group-V with 50% group-VI atoms; for the [111] nonpolar interfaces, the mixings are 25% group-III (II) and 75% group-II (III) atoms or 25% group-V (VI) and 75% group-VI (V) atoms. For all the nonpolar interfaces, the [110] interface has the lowest interfacial energy because it has the minimum number of II-V or III-VI "wrong bonds" per unit interfacial area. The interfacial energy increases when the atomic number of the elements decreases, except for the ZnO/GaN system. The band alignments between the II-VI and III-V compounds are drastically different depending on whether they have mixed-cation or mixed-anion interfaces, but the averaged values are nearly independent of the orientations. Similarly, other than ZnO/GaN, the valence-band offsets also increase as the atomic number of the elements decreases. The abnormal trends in interfacial energy and band alignment for ZnO/GaN are primarily attributed to the very short bond lengths in this system. The underlying physics behind these trends are explained.

  19. Electric field control of spin splitting in III-V semiconductor quantum dots without magnetic field

    NASA Astrophysics Data System (ADS)

    Prabhakar, Sanjay; Melnik, Roderick

    2015-10-01

    We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.

  20. The Rise of III-V Semiconductors and Their Impact on Environmental Indium Concentrations

    NASA Astrophysics Data System (ADS)

    White, S. O.; Hemond, H.

    2008-12-01

    New semiconductor manufacturing processes are critical to emerging energy technologies. While these technologies will inevitably employ the use of novel materials, potentially in large quantities, little is known about the environmental behavior or toxicology of many of the materials that will be employed. This work investigates the potential environmental impact of novel metals on hydrologic systems, using indium as a case study. Indium production has been predicted to increase as much as 1000-fold in the next two decades, driven by its use in new high-efficiency photovoltaic cells, LEDs, and in indium tin oxide (ITO) electrical coatings for photovoltaics and displays (e.g. flat panel and liquid crystal displays). We propose the comparison of anthropogenic fluxes to natural fluxes of a metal as a useful early approach for flagging elements for priority study if it appears that projected anthropogenic fluxes may rival or exceed their natural fluxes. Analyses of sediment core data provide an historical record of metal concentrations in overlying waters, revealing information about natural, background concentrations and the importance of present-day anthropogenic and natural inputs to the system. Data from an industrial watershed in Massachusetts supports published data from a Swedish lake that suggests that indium concentrations have been increasing for the past 150 years, much before indium was used widely, and are now 1.5-10 times higher than background levels. These cores also show that while indium use has been increasing since the mid-1970s, concentrations in sediments have been decreasing. Initial calculations suggest that the mining/smelting of zinc ores are the largest contribution of indium to local watersheds, but that use by the semiconductor industry may drive a demand for indium that enhances its recovery from zinc ores (of which indium is a byproduct) and actually decreases local watershed releases.

  1. Iii-V Compound Semiconductor Integrated Charge Storage Structures for Dynamic and Non-Volatile Memory Elements

    NASA Astrophysics Data System (ADS)

    Hetherington, Dale Laird

    This thesis presents an investigation into a novel group of GaAs charge storage devices. These devices, which are an integration of bipolar and junction field effect transistor structures were conceived, designed, fabricated, and tested within this study. The purpose was to analyse new types of charge storage devices, which are suitable for fabrication and lead to the development of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit nondestructive reading, and three of the prototypes can be electrically erased. All types use the junction field effect transistor (JFET) for charge sensing, with each having different bipolar or epitaxial layer structure controlling the junction gate. The bottom epitaxial layer in each case served as the JFET channel. Two of the device types have three alternately doped layers, while the remaining two have four alternately doped layers. In all cases, removal of majority carriers from the middle layers constitutes stored charge. The missing carriers deplete the current carrying a region of the JFET channel. Drain current of the JFET becomes an indicator of stored charge. The basic function of each JFET memory element type is independent of interchanging n- and p- type doping within the structure type. Some performance advantage can be realized, however, by sensing with an n-type channel as compared to p- type due to increased carrier mobility. All device types exhibit storage time characteristics of order ten seconds. Devices are constructed in epitaxial layers grown by molecular beam epitaxy (MBE) reactors. The design of the epitaxial layers is an intrinsic part, together with the electrical design, of the storage device concept. These concepts are implemented first with photolithography masks which are used

  2. An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires.

    PubMed

    Baig, Sarwat A; Boland, Jessica L; Damry, Djamshid A; Tan, H Hoe; Jagadish, Chennupati; Joyce, Hannah J; Johnston, Michael B

    2017-04-12

    Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump-terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of -8 dB. We achieve an extinction of over 13% and a dynamic range of -9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

  3. Growth and Characterization of III-V Semiconductors for Device Applications

    NASA Technical Reports Server (NTRS)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  4. The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks

    SciTech Connect

    Krylov, Igor; Ritter, Dan; Eizenberg, Moshe

    2015-09-07

    Dispersion in accumulation is a widely observed phenomenon in metal-oxide-semiconductor gate stacks based on III-V compound semiconductors. The physical origin of this phenomenon is attributed to border traps located in the dielectric material adjacent to the semiconductor. Here, we study the role of the semiconductor substrate on the electrical quality of the first layers at atomic layer deposited (ALD) dielectrics. For this purpose, either Al{sub 2}O{sub 3} or HfO{sub 2} dielectrics with variable thicknesses were deposited simultaneously on two technology important semiconductors—InGaAs and InP. Significantly larger dispersion was observed in InP based gate stacks compared to those based on InGaAs. The observed difference is attributed to a higher border trap density in dielectrics deposited on InP compared to those deposited on InGaAs. We therefore conclude that the substrate plays an important role in the determination of the electrical quality of the first dielectric monolayers deposited by ALD. An additional observation is that larger dispersion was obtained in HfO{sub 2} based capacitors compared to Al{sub 2}O{sub 3} based capacitors, deposited on the same semiconductor. This phenomenon is attributed to the lower conduction band offset rather than to a higher border trap density.

  5. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Hossain, Mohammed Imrul

    Intersubband transitions (ISBTs) in the conduction band (CB) of semiconductor multiple quantum wells (QW) have led to devices, like quantum-well infrared photodetectors and quantum cascade lasers (QCL). Due to the complexities related to the valence band (VB), hole ISBTs have not been explored as intensively as their electronic counterparts. Absorption and photoluminescence due to ISBT in the VB have been reported for p-type Si-SiGe QWs but this material system suffers from significant challenges associated with the built-in strain of these lattice mismatched materials. The GaAs/AlGaAs material system is virtually strain-free and quite mature. We are investigating the properties of bound-to-bound inter-valence subband transitions in GaAs QWs with high Al composition barriers for mid-infrared emitters. Hole ISBTs are interesting because the polarization of the light emitted in heavy-to-light hole transitions is not restricted to the perpendicular of the quantum wells (unlike electron ISBTs in the CB due to selection rules), therefore surface emitting QCLs and ultimately vertical-cavity surface emitting devices are possible using these transitions. Moreover the valence-band offset for pure GaAs and AlAs is comparable with the conduction-band offset in the traditional InGaAs/InAlAs lattice matched to InP system. Very recently we have observed strong heavy to light hole absorption and heavy to heavy hole electroluminescence from ridge waveguide structures in the mid infra-red range. We are also investigating dual wavelength mid infra-red QCLs in the InGaAs/InAlAs system lattice matched to InP. This device may be useful in applications like differential absorption lidar where light has to be evaluated and compared at two different frequencies for environmental sensing application. Most approaches to multi-wavelength QCL operation involve the use of heterogeneous cascades. Our design involves a single type of active region, emitting at two widely different wavelengths in

  6. The Mechanical Properties of III-V Compound Semiconductors Used in High Efficiency Multijunction Photovoltaic Cells

    NASA Astrophysics Data System (ADS)

    Zakaria, Abdallah

    Lattice-mismatched heteroepitaxy enables the fabrication of metamorphic solar cells that have reached record light conversion efficiencies in the last five years. These devices are accelerating the commercialization of concentrator photovoltaics that can compete with fossil fuels for terrestrial energy production. A critical part of metamorphic structures is the graded buffer layer (GBL) needed to progressively change the lattice constant of the substrate to that the epilayer of interest. The effectiveness of the graded buffer layer in relieving misfit strain affects the quality of the device grown and depends on a variety of parameters. This study focuses on the mechanical properties of semiconductor compounds used in graded buffer layers. First, the effect of compound semiconductor spontaneous atomic ordering on hardness is assessed. In1--xGaxP was deposited on Ge wafers in two structures. A surfactant was used in experiment A to induce a lower degree of order. High resolution x-ray diffraction (HRXRD) estimated a theoretical band gap energy Eg corrected for strain effects. Photoluminescence measured the actual Eg. By comparing the two, the degree of order eta was determined to be 0.12-0.15 for samples A and 0.43-0.44 for samples B. Atomic force microscopy (AFM) demonstrated that all wafers had an equivalent surface roughness of 6.1-7.4 A. Nanoindentation measurements determined that the degree of order has no effect on the hardness of InGaP. Using 1/2 (115) superlattice reflection scans, the InGaP ordered domains size was estimated to be 28.5 nm for sample B1. No superlattice peak was detected in sample A1. The large ordered domain size in B1 explains why no order-hardening behavior was observed in InGaP. Second, a correlation between the composition of a ternary compound semiconductor and hardness is established and the effect of oxidation is determined. A structure consisting of three different AlxGa1--xAs layers separated by In0.01Ga0.99As etch stops was

  7. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  8. Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Kumar Thota, Venkata Ramana

    Semiconductor nanostructures such as quantum dots, quantum wires and quantum wells have gained significant attention in the scientific community due to their peculiar properties, which arise from the quantum confinement of charge carriers. In such systems, confinement plays key role and governs the emission spectra. With the advancements in growth techniques, which enable the fabrication of these nanostructured devices with great precision down to the atomic scale, it is intriguing to study and observe quantum mechanical effects through light-matter interactions and new physics governed by the confinement, size, shape and alloy composition. The goal is to reduce the size of semiconductor bulk material to few nanometers, which in turn localizes the charge carriers inside these structures such that the spin associated with them is used to carry and process information within ultra-short time scales. The main focus of this dissertation is the optical studies of quantum dot molecule (QDM) systems. A system where the electrons can tunnel between the two dots leading to observable tunneling effects. The emission spectra of such system has been demonstrated to have both intradot transitions (electron-hole pair residing in the same dot) and interdot transitions (electron-hole pair participating in the recombination origin from different dots). In such a system, it is possible to apply electric field such that the wavefunction associated with the charge carriers can be tuned to an extent of delocalizing between the two dots. This forms the first project of this dissertation, which addresses the origin of the fine structure splitting in the exciton-biexciton cascade. Moreover, we also show how this fine structure can be tuned in the quantum dot molecule system with the application of electric field along the growth direction. This is demonstrated through high resolution polarization dependent photoluminescence spectroscopy on a single QDM, which was described in great detail

  9. III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique

    NASA Astrophysics Data System (ADS)

    Arimochi, Masayuki; Watanabe, Tomomasa; Yoshida, Hiroshi; Tange, Takashi; Nomachi, Ichiro; Ikeda, Masao; Dai, Pan; He, Wei; Ji, Lian; Lu, Shulong; Yang, Hui; Uchida, Shiro

    2015-05-01

    We have developed III-V compound semiconductor multi-junction solar cells by a room-temperature wafer-bonding technique to avoid the formation of dislocations and voids due to lattice mismatch and thermal damage during a conventional high-temperature wafer-bonding process. First, we separately grew an (Al)GaAs top cell on a GaAs substrate and an InGaAs bottom cell on an InP substrate by metal solid source molecular beam epitaxy. Thereafter, we successfully bonded these sub-cells by the room-temperature wafer-bonding technique and fabricated (Al)GaAs ∥ InGaAs wafer-bonded solar cells. To the best of our knowledge, the obtained GaAs ∥ InGaAs and AlGaAs ∥ InGaAs wafer-bonded solar cells exhibited the lowest electrical and optical losses ever reported. The AlGaAs ∥ InGaAs solar cells reached the maximum efficiency of 27.7% at 120 suns. These results suggest that the room-temperature wafer-bonding technique has high potential for achieving higher conversion efficiencies.

  10. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  11. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    PubMed

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  12. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGES

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; ...

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  13. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  14. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    NASA Astrophysics Data System (ADS)

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  15. Surface reactions during the atomic layer deposition of high-kappa dielectrics on III-V semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Ye, Liwang

    The quality of the dielectric/semiconductor interface is one of the most critical parameters for the fabrication of high-speed and low-power-consumption III-V semiconductor based metal-oxide-semiconductor field effect transistors (MOSFETs), as it determines the device performance. This dissertation contains investigations of the deposition and interface of binary oxide films on GaAs(100) and InAs(100) surfaces aiming at understanding the removal of the surface native oxides during certain atomic layer deposition (ALD) processes. To accomplish that, two complementary experimental approaches have been used. Initially, films were deposited in a conventional ALD reactor and characterized ex situ using spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), and atomic force microscopy (AFM). The systems examined were Ta2O 5 on GaAs(100) surfaces from pentakis(dimethylamino) tantalum (Ta(N(CH 3)2)5, PDMAT) and TiO2 on GaAs(100) and InAs(100) surfaces from tetrakis(dimethylamino) titanium (Ti(N(CH 3)2)4, TDMAT). For these systems, deposition at the optimal ALD temperature resulted in practically sharp interfaces. Indium oxides were found to diffuse through ~ 6 nm of TiO2 film and accumulate on the topmost film layer. For the ALD of Ta2O5 on GaAs(100) surfaces, native oxide removal was enhanced at deposition temperatures above the ALD window; for ALD of TiO2 on both GaAs(100) and InAs(100) surfaces, native oxide removal was enhanced as the deposition temperatures increased up to 250 A°C, while oxidation of the interface was observed for deposition above 300 A°C due to the formation of noncontinuous films. To elucidate the surface reactions occurring during the deposition, an in situ attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy apparatus was constructed and used to investigate the surface reactions during the ALD of TiO2 and HfO2 on GaAs(100) surfaces. The

  16. Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

    NASA Astrophysics Data System (ADS)

    Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

    2017-03-01

    In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

  17. Low Field, Large Magnetoresistance in Nonmagnetic Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Bergeson, Jeremy D.

    2007-03-01

    Transport in various thin-film organic semiconductors has been shown to have an anomalously high sensitivity to low magnetic fields at room temperature (RT). Early experiments on polydiacetylene single crystals and poly(phenylenevinylene)s revealed increases in photoconductivity of a few percent at RT. Further magnetotransport studies showed larger effects in π-conjugated backbone polymers and small molecules. We report magnetoresistance (MR) for semiconducting oligomer and nonconjugated polymer materials in addition to small molecule and conjugated backbone polymer materials. For example, films of the light emitters poly(N-vinylcarbazole) and Alq3 each have an MR response greater than 5% at an unusually low magnetic field of 100 Oe (μBH ˜0.0006 meV) at an unusually high temperature of 300 K (kBT ˜26 meV). Increasing the spin-orbit coupling in Alq3 films by doping with the phosphorescent sensitizers Ir(ppy)3 or PtOEP strongly suppresses the MR signal. MR in thin films of the oligomer α-sexithiophene can be negative, similar to the behavior of other organic semiconductors, or positive depending on the temperature, layer thickness, or applied voltage. We have developed a model, termed Magnetoresistance by the Interconversion of Singlets and Triplets (MIST), accounting for this anomalous MR. At zero field, the singlet and triplet e-h pair states are degenerate and the states can readily interconvert due to hyperfine interaction. Finite magnetic fields lift triplet degeneracy which affects the hyperfine interconversion of e-h pairs between singlet and triplet states. By changing the carrier recombination the MIST mechanism gives rise to a space-charge-limited current that depends on magnetic field, producing MR. E.L. Frankevich, et al., Mol. Cryst. Liq. Cryst.175, 41 (1989); E.L. Frankevich, et al., Phys. Rev. B 46, 9320 (1992). O. Mermer, et al., Phys. Rev. B 72, 205202 (2005). V.N. Prigodin, et al., Synth. Met.156, 757 (2006).

  18. Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxy.

    PubMed

    Fukui, Takashi; Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro

    2012-01-01

    We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metal-organic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We form a 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.

  19. Influence of nonmagnetic impurity scattering on spin dynamics in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Ungar, F.; Tamborenea, P. I.; Axt, V. M.

    2017-01-01

    The doping of semiconductors with magnetic impurities gives rise not only to a spin-spin interaction between quasifree carriers and magnetic impurities but also to a local spin-independent disorder potential for the carriers. Based on a quantum kinetic theory for the carrier and impurity density matrices as well as the magnetic and nonmagnetic carrier-impurity correlations, the influence of the nonmagnetic scattering potential on the spin dynamics in DMS after optical excitation with circularly polarized light is investigated using the example of Mn-doped CdTe. It is shown that non-Markovian effects, which are predicted in calculations where only the magnetic carrier-impurity interaction is accounted for, can be strongly suppressed in the presence of nonmagnetic impurity scattering. This effect can be traced back to a significant redistribution of carriers in k -space which is enabled by the build-up of large carrier-impurity correlation energies. A comparison with the Markov limit of the quantum kinetic theory shows that, in the presence of an external magnetic field parallel to the initial carrier polarization, the asymptotic value of the spin polarization at long times is significantly different in the quantum kinetic and the Markovian calculations. This effect can also be attributed to the formation of strong correlations, which invalidates the semiclassical Markovian picture and it is stronger when the nonmagnetic carrier-impurity interaction is accounted for. In an external magnetic field perpendicular to the initial carrier spin, the correlations are also responsible for a renormalization of the carrier spin precession frequency. Considering only the magnetic carrier-impurity interaction, a significant renormalization is predicted for a very limited set of material parameters and excitation conditions. Accounting also for the nonmagnetic interaction, a relevant renormalization of the precession frequency is found to be more ubiquitous.

  20. Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong

    2016-02-01

    We investigate the tunneling time (dwell time) in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. It is found that spin-dependent resonant bands form in the spectra of dwell time, which can be effectively manipulated by not only the external magnetic field but also the geometric parameters of the system. Moreover, an intuitive semiclassical delay is defined to illustrate the behavior of the dwell time, and the former one is shown to be the result of “smoothing out” the latter one. We also find that the dwell time in diluted-magnetic-semiconductor/semiconductor superlattices behaves surprisingly different from the DMS/NB case, especially for spin-down electrons.

  1. III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

    NASA Astrophysics Data System (ADS)

    Yokoyama, Masafumi; Yasuda, Tetsuji; Takagi, Hideki; Miyata, Noriyuki; Urabe, Yuji; Ishii, Hiroyuki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Sugiyama, Masakazu; Nakano, Yoshiaki; Takenaka, Mitsuru; Takagi, Shinichi

    2010-04-01

    We have developed III-V-semiconductor-on-insulator (III-V-OI) structures on Si wafers with excellent bottom interfaces between In0.53Ga0.47As-OI channel layers and atomic-layer-deposited Al2O3 (ALD-Al2O3) buried oxides (BOXs). A surface activated bonding process and the sulfur passivation pretreatment have realized the excellent In0.53Ga0.47As-OI/ALD-Al2O3 BOX bottom interface properties. As a result, the III-V-OI n-channel metal-insulator-semiconductor field-effect transistors under the back-gate configuration showed the peak mobility of 1800 cm2/V s and the higher electron mobility than the Si universal one even in the high effective electric field range because of the reduction in the surface roughness and fixed charges.

  2. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Gu, J. J.; Koybasi, O.; Wu, Y. Q.; Ye, P. D.

    2011-09-01

    III-V-on-nothing (III-VON) metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally demonstrated with In0.53Ga0.47As as channel and atomic layer deposited Al2O3 as gate dielectric. A hydrochloric acid based release process has been developed to create an air gap beneath the InGaAs channel layer, forming the nanowire channel with width down to 40 nm. III-VON MOSFETs with channel lengths down to 50 nm are fabricated and show promising improvement in drain-induced barrier lowering, due to suppressed short-channel effects. The top-down processing technique provides a viable pathway towards fully gate-all-around III-V MOSFETs.

  3. Investigation of the abnormal Zn diffusion phenomenon in III-V compound semiconductors induced by the surface self-diffusion of matrix atoms

    NASA Astrophysics Data System (ADS)

    Tang, Liangliang; Xu, Chang; Liu, Zhuming

    2017-01-01

    Zn diffusion in III-V compound semiconductorsare commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically undergroup III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except InAs. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.

  4. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  5. Optically detected carrier transport in III/V semiconductor QW structures: experiments, model calculations and applications in fast 1.55 µm laser devices

    NASA Astrophysics Data System (ADS)

    Hillmer, H.; Marcinkevičius, S.

    1998-01-01

    This paper reviews optically detected carrier dynamics in III/V semiconductor quantum well (QW) heterostructures perpendicular to the interfaces. Photoluminescence emissions originating from different semiconductor layers are recorded in a time-resolved way to monitor the carrier dynamics between these layers. The experimental methods presented provide a very high spatial and temporal resolution, partly even in the nanometer and sub-picosecond ranges, respectively. Model calculations based on a self-consistent solution of the continuity equation, the Poisson equation and rate-equation(s) are used to evaluate the experimental data. It will be demonstrated that experiments using several specially tailored semiconductor heterostructures enable the following individual dynamic effects to be studied and separated: transport in extended unquantized layers, capture into the QWs, relaxation in the QWs, tunneling between the QWs and thermal re-emission from the QWs. It will be shown that several basic physical effects have to be studied and understood before modern high-speed semiconductor laser devices can be designed and implemented. By adding levels of increasing complexity, this review starts from simple basic structures to finally approach real laser structures in a sequence of consecutive steps. AlGaInAs and GaInAsP heterostructures are compared with respect to interwell transfer efficiencies and problems in technological implementation. This review proceeds from basic research on carrier dynamics to applications in high-speed laser devices. Throughout the review an overview of the experimental and theoretical literature is given.

  6. Calculating Effect of Point Defects on Optical Absorption Spectra of III-V Semiconductor Superlattices Based on (8x8) k-dot-p Band Structures

    NASA Astrophysics Data System (ADS)

    Huang, Danhong; Iurov, Andrii; Gumbs, Godfrey; Cardimona, David; Krishna, Sanjay

    For a superlattice which is composed of layered zinc-blende structure III-V semiconductor materials, its realistic anisotropic band structures around the Gamma-point are calculated by using the (8x8)k-dot-p method with the inclusion of the self-consistent Hartree potential and the spin-orbit coupling. By including the many-body screening effect, the obtained band structures are further employed to calculate the optical absorption coefficient which is associated with the interband electron transitions. As a result of a reduced quasiparticle lifetime due to scattering with point defects in the system, the self-consistent vertex correction to the optical response function is also calculated with the help of the second-order Born approximation.

  7. Large-signal characterizations of DDR IMPATT devices based on group III-V semiconductors at millimeter-wave and terahertz frequencies

    NASA Astrophysics Data System (ADS)

    Acharyya, Aritra; Mallik, Aliva; Banerjee, Debopriya; Ganguli, Suman; Das, Arindam; Dasgupta, Sudeepto; Banerjee, J. P.

    2014-08-01

    Large-signal (L-S) characterizations of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III-V semiconductors such as wurtzite (Wz) GaN, GaAs and InP have been carried out at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation (NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials (i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.

  8. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Refractive indices of superlattices made of III-V semiconductor compounds and their solid solutions and semiconductor waveguide laser structures

    NASA Astrophysics Data System (ADS)

    Unger, K.

    1988-11-01

    An analysis is made of the theoretical problems encountered in precision calculations of refractive indices of semiconductor materials arising in connection with the use of superlattices as active layers in double-heterostructure lasers and in connection with the use of the impurity-induced disordering effect, i.e., the ability to transform selectively a superlattice into a corresponding solid solution. This can be done by diffusion or ion implantation. A review is given of calculations of refractive indices based on the knowledge of the energy band structure and the role of disorder is considered particularly. An anomaly observed in the (InAl)As system is considered. It is shown that the local field effects and exciton transitions are important. A reasonable approach is clearly a direct calculation of the difference between the refractive indices of superlattices based on compounds and of those based on their solid solutions.

  9. III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

    DOE PAGES

    Liu, Sheng; Keeler, Gordon A.; Reno, John L.; ...

    2016-06-10

    We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.

  10. Systematic defect donor levels in III-V and II-VI semiconductors revealed by hybrid functional density-functional theory

    NASA Astrophysics Data System (ADS)

    Petretto, Guido; Bruneval, Fabien

    2015-12-01

    The identification of defect levels from photoluminescence spectroscopy is a useful but challenging task. Density-functional theory (DFT) is a highly valuable tool to this aim. However, the semilocal approximations of DFT that are affected by a band gap underestimation are not reliable to evaluate defect properties, such as charge transition levels. It is now established that hybrid functional approximations to DFT improve the defect description in semiconductors. Here we demonstrate that the use of hybrid functionals systematically stabilizes donor defect states in the lower part of the band gap for many defects, impurities or vacancies, in III-V and in II-VI semiconductors, even though these defects are usually considered as acceptors. These donor defect states are a very general feature and, to the best of our knowledge, have been overlooked in previous studies. The states we identify here may challenge the older assignments to photoluminescent peaks. Though appealing to screen quickly through the possible stable charge states of a defect, semilocal approximations should not be trusted for that purpose.

  11. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

    SciTech Connect

    Hurle, D. T. J.

    2010-06-15

    A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defects are obtained by fitting to experimental data. In undoped material, vacancies, and interstitials on the Group V sublattice dominate in the vicinity of the melting point (MP) in both the phosphides and arsenides, whereas, in the antimonides, vacancies on both sublattices dominate. The calculated concentrations of the native point defects are used to construct the solidus curves of all the compounds. The charged native point defect concentrations at the MP in four of the six materials are significantly higher than their intrinsic carrier concentrations. Thus the usually assumed high temperature 'intrinsic' electroneutrality condition for undoped material (n=p) is not valid for these materials. In GaSb, the Ga{sub Sb} antisite defect appears to be grown-in from the melt. This contrasts with the As{sub Ga} defect in GaAs for which the concentration grown-in at the MP is negligibly small. Compensation of donor-doped material by donor-Group III vacancy complexes is shown to exist in all the compounds except InP where Group VI doped crystals are uncompensated and in InSb where there is a lack of experimental data. The annealing effects in n{sup +} GaAs, including lattice superdilation, which were shown in the earlier paper to be due to Group III vacancy undersaturation during cooling, are found to be present also in GaSb and In

  12. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Hurle, D. T. J.

    2010-06-01

    A thermodynamic model is used to analyze available experimental data relevant to point defects in the binary zinc-blende III-V compounds (Ga,In)-(P,As,Sb). The important point defects and their complexes in each of the materials are identified and included in the model. Essentially all of the available experimental data on dopant solubility, crystal density, and lattice parameter of melt and solution grown crystals and epilayers are reproduced by the model. It extends an earlier study [Hurle, J. Appl. Phys. 85, 6957 (1999)] devoted solely to GaAs. Values for the enthalpy and entropy of formation of both native and dopant related point defects are obtained by fitting to experimental data. In undoped material, vacancies, and interstitials on the Group V sublattice dominate in the vicinity of the melting point (MP) in both the phosphides and arsenides, whereas, in the antimonides, vacancies on both sublattices dominate. The calculated concentrations of the native point defects are used to construct the solidus curves of all the compounds. The charged native point defect concentrations at the MP in four of the six materials are significantly higher than their intrinsic carrier concentrations. Thus the usually assumed high temperature "intrinsic" electroneutrality condition for undoped material (n=p) is not valid for these materials. In GaSb, the GaSb antisite defect appears to be grown-in from the melt. This contrasts with the AsGa defect in GaAs for which the concentration grown-in at the MP is negligibly small. Compensation of donor-doped material by donor-Group III vacancy complexes is shown to exist in all the compounds except InP where Group VI doped crystals are uncompensated and in InSb where there is a lack of experimental data. The annealing effects in n+ GaAs, including lattice superdilation, which were shown in the earlier paper to be due to Group III vacancy undersaturation during cooling, are found to be present also in GaSb and InAs. Results for native

  13. Wet Oxidation of High-Al-Content III-V Semiconductors: Important Materials Considerations for Device Applications

    SciTech Connect

    Ashby, Carol I.H.

    1999-05-19

    Wet oxidation of high-Al-content AIGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation of high-Al-content AlGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation has also been considered as a route to the long-sought goal of a IH-V MIS technology. To continue improving device designs for even higher performance and to establish a truly manufacturable technology based on wet oxidation, the effect of oxidation of a given layer on the properties of the entire device structure must be understood. The oxidation of a given layer can strongly affect the electrical and chemical properties of adjacent layers. Many of these effects are derived from the production of large amounts of elemental As during the oxidation reaction, the resultant generation of point defects, and the diffusion of these defects into adjacent regions. This can modify the chemical and electrical properties of these regions in ways that can impact device design, fabrication, and performance. Current understanding of the problem is discussed here.

  14. The Application of Iii-V Semiconductor Heterojunction Structures Grown by Molecular Beam Epitaxy to Microwave Devices

    NASA Astrophysics Data System (ADS)

    Schaff, William Joseph

    Semiconductor devices capable of higher speeds and higher frequency operation have been a subject of great interest for many years. New fabrication techniques have provided the tools for pushing conventional device performance to new limits. These new techniques have also made possible entirely new clases of devices such as inverted High Electron Mobility Transistors and AlGaAs buffered GaAs MESFETs. The production of such state of the art devices invariably leads to a discovery of materials and process limitations that need to be eliminated. The requirement for achieving changes in composition in semiconductor materials within a single atomic layer is central to the above devices as well as many proposed devices. Molecular Beam Epitaxy has already produced materials with atomic monolayer abruptness in some structures. There are however, some desirable structures that have not been successfully produced by this technique. The fundamental problem is that good quality AlGaAs/GaAs interfaces for GaAs on AlGaAs have not been obtained when the thickness of the AlGaAs is comparable to that needed for inverted High Electron Mobility Transistors or AlGaAs buffered power Field Effect Transistors. It has been found that impurity contamination of GaAs grown on top of AlGaAs can be a severe problem. The purpose of this work is to understand the difficulties which occur and demonstrate the successful application of some techniques which minimize, or eliminate, some of the limitations on current and anticipated device performance. The concept of impurity gettering by an interface and a form of strained layer superlattice effected lattice matching are explored for GaAs and AlGaAs structures. A GaAs MESFET has been fabricated on a superlattice buffer for the first time. It has superior performance to devices with simpler structures. The improved material properties obtained by substitution of a superlattice buffer for the homogeneous GaAs buffer are measured, as a final test, by

  15. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum

    PubMed Central

    Seghilani, Mohamed S.; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-01-01

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here “orbital birefringence”, based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create “orbital gain dichroism” allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (<1°) diffraction limited beam, emitting 49 mW output power in the near-IR at λ ≃ 1 μm, a charge l = ±1, … ±4 (>50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications. PMID:27917885

  16. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum

    NASA Astrophysics Data System (ADS)

    Seghilani, Mohamed S.; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-01

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here “orbital birefringence”, based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create “orbital gain dichroism” allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (<1°) diffraction limited beam, emitting 49 mW output power in the near-IR at λ ≃ 1 μm, a charge l = ±1, … ±4 (>50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  17. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    PubMed

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (<1°) diffraction limited beam, emitting 49 mW output power in the near-IR at λ ≃ 1 μm, a charge l = ±1, … ±4 (>50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  18. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    PubMed

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  19. Investigating the growth, structural and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lin, Andrew

    Extensive research efforts have been devoted to the study and development of III-V compound semiconductor nanowires (NWs) and nanopillars (NPs) because of their unique physical properties and ability to form high quality, highly lattice-mismatched axial and radial heterostructures. These advantages lead to precise nano-bandgap engineering to achieve new device functionalities. One unique and powerful approach to realize these NPs is by catalyst-free, selective-area epitaxy (SAE) via metal-organic chemical vapor deposition, in which the NP location and diameter can be precisely controlled lithographically. Early demonstrations of electronic and optoelectronic devices based on these NPs, however, are often inferior compared to their planar counterparts due to a few factors: (1) interface/surface states, (2) inaccurate doping calibration, and (3) increased carrier scattering and trapping from stacking fault formation in the NPs. In this study, the detailed growth mechanisms of different III-As, III-Sb and III-P NPs and their heterostructures are investigated. These NPs are then fabricated into single-NP field-effect transistors (FETs) to probe their electrical properties. It is shown that these devices are highly diameter-dependent, mainly because of the effects of surface states. By growing a high band-gap shell around the NP cores to passivate the surface, the device performance can be significantly improved. Further fabrication and characterization of vertical surround-gate FETs using a high-mobility InAs/InP NP channel is also discussed. Aside from the radial NP heterostructures, different approaches to achieve purely axial heterostructures in InAs/In(As)P materials are also presented with excellent interface quality. Both single barrier and double barrier structures are realized and fabricated into devices that show carrier transport characteristics over a barrier and even resonant tunneling behavior. Antimonide-based NPs are also studied for their immense

  20. Enhanced infrared magneto-optical response of the nonmagnetic semiconductor BiTeI driven by bulk Rashba splitting.

    PubMed

    Demkó, L; Schober, G A H; Kocsis, V; Bahramy, M S; Murakawa, H; Lee, J S; Kézsmárki, I; Arita, R; Nagaosa, N; Tokura, Y

    2012-10-19

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3 T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  1. III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers

    NASA Astrophysics Data System (ADS)

    Chiu, YenTing

    This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further

  2. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    PubMed

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe3O4/CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (HE) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  3. Hybrid III-V/silicon lasers

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  4. Exploring Cryogenic Focused Ion Beam Milling as a Group III-V Device Fabrication Tool

    DTIC Science & Technology

    2013-09-01

    focused ion beam (cryo-FIB) milling as a Group III-V device fabrication tool. Cryogenic cooling of III-V semiconductor material during Ga + FIB irradiation...potential applications of cryogenic focused ion beam (cryo-FIB) milling as a Group III-V device fabrication tool. Cryogenic cooling of III-V semiconductor...sensitivity to the Ga ion beam . This sensitivity is manifested as changes in the structure and chemical composition of the starting material upon exposure to

  5. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  6. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    SciTech Connect

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang; Gao, Kun; Helm, M.; Weschke, E.; Gordan, O.; Salvan, G.; Zahn, D. R. T.

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  7. Magnetic field effect in non-magnetic organic semiconductor thin film devices and its applications

    NASA Astrophysics Data System (ADS)

    Mermer, Omer

    Organic pi-conjugated materials have been used to manufacture devices such as organic light-emitting diodes (OLEDs), photovoltaic cells and field-effect transistors. Recently there has been growing interest in spin and magnetic field effects in these materials. In this thesis, I report on the discovery and experimental characterization of a large and intriguing magnetoresistance effect, which we dubbed organic magnetoresistance (OMAR), in various pi-conjugated polymer and small molecular OLEDs. OMAR may find application in magnetic field sensors in OLED interactive displays (patent pending). We discovered OMAR originally in devices made from the pi-conjugated polymer polyfluorene. We found ≈ 10% magnetoresistance at 10 mT fields at room temperature. The effect is independent of the field direction, and is only weakly temperature dependent. We show that OMAR is a bulk effect related to the majority carrier transport. Studying polymer films with different amount of disorder we found that low disorder/large mobility is not a necessary prerequisite for large OMAR response. We also studied a possible interrelation between spin-orbit coupling and the OMAR effect in platinum-containing polymers. We found that spin-orbit coupling has apparently little effect on OMAR. A large OMAR effect was also observed in devices made from the prototypical small molecule, Alq3 that is similar in size to that in the polyfluorene devices. Our study shows that the basic properties are equivalent to polymer devices. To the best of our knowledge, OMAR is not adequately described by any of the magnetoresistance mechanisms known to date. A future explanation for this effect may lead to a breakthrough in the scientific understanding of organic semiconductors. In a largely unrelated effort, we also modelled spin-dependent exciton formation in OLEDs. Our work leads to the following picture of exciton formation: Since the triplet exciton states lie lower in energy than singlets, more phonons must

  8. The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

  9. Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

    PubMed

    Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

    2010-05-21

    The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

  10. Characterization of III-V Semiconductors.

    DTIC Science & Technology

    1981-04-01

    Epitaxial GaAs by Transient Capacitance ....................... 71 9.5 Persistent Photoconductivity in GaAs: Relationship to Low-Temperature Solar Cell I - V Characteristiss...the DLTS techniqu&. 66 71 __ 9.5 Persistant Photoconductivitv in GaAs:Relationship to Low- Temperature Solar Cell I - V Characteristics The following

  11. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    NASA Astrophysics Data System (ADS)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  12. Study of the Local Structure of GALLIUM(X)INDIUM(1 -X)ARSENIDE(Y)ANTIMONY(1-Y), a Quaternary Iii-V Semiconductor Alloy, Using the Extended X-Ray Absorption Fine Structure (exafs) Technique.

    NASA Astrophysics Data System (ADS)

    Islam, Shaheen Momtaz

    The technological importance of quaternary semiconductor alloys has stimulated considerable interest in the basic physics of these materials. Understanding of the local structure of these alloys is of fundamental importance. In this work, the extended x-ray absorption fine structure (EXAFS) technique has been used to investigate the atomic-scale structure of the III-V quaternary alloy series Ga_{rm x}In _{rm 1-x}As _{rm y}Sb_ {rm 1-y}, where Ga and In atoms occupy one sublattice and As and Sb atoms are distributed over the other sublattice. Two series of these alloys were studied with varying x (from 0.05 to 0.95) and keeping y constant (y = 0.05 or y = 0.10). The samples were polycrystalline powders of various compositions. EXAFS data were obtained at the As K-edge at room temperature for all these alloys. Our measurements reveal the number and types of atoms and the nearest neighbor distances about the average As atom. Our results show a consistent deviation from random site occupation in all these alloys, with Ga-As (and therefore In-Sb) pairs being clearly preferred over In-As and Ga -Sb pairs. This result is consistent with a theoretical model based on the pair approximation. From EXAFS measurements we also observe that the variation of Ga-As and In-As near-neighbor distances with composition is linear and that the bond-lengths remain nearly constant, closer to those in the pure binary compounds and varying only by 0.03 to 0.05A. On the other hand, the x-ray diffraction results show that the average cation -anion distance in the alloys changes by as much as 0.165A in accordance with Vegard's law. This linear variation of lattice constant with composition between the end members suggests that the atomic volume is conserved regardless of the details of the local distortions of lattice.

  13. Integration of III-V materials and Si-CMOS through double layer transfer process

    NASA Astrophysics Data System (ADS)

    Lee, Kwang Hong; Bao, Shuyu; Fitzgerald, Eugene; Tan, Chuan Seng

    2015-03-01

    A method to integrate III-V compound semiconductor and SOI-CMOS on a common Si substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer. Another III-V/Si substrate is then bonded to the SOI-CMOS containing handle wafer. Finally, the handle wafer is released to realize the SOI-CMOS on III-V/Si hybrid structure on a common substrate. Through this method, high temperature III-V materials growth can be completed without the presence of the temperature sensitive CMOS layer, hence damage to the CMOS layer is avoided.

  14. Discontinuities and bands alignments of strain-balanced III-V-N/III-V-Bi heterojunctions for mid-infrared photodetectors

    NASA Astrophysics Data System (ADS)

    Chakir, K.; Bilel, C.; Habchi, M. M.; Rebey, A.

    2017-02-01

    We have developed a 10- and 14-band anticrossing (BAC) models to investigate the band structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V semiconductors causes a significant reduction in the band gap energy and an enhancement of the spin-orbit splitting energy. Further, the conduction and valence offsets between III-V-N/III-V-Bi were also investigated for different nitrogen and bismuth concentrations. For III-V-N/III-V-Bi heterojunctions, the strain-balanced criteria were undertaken by the zero stress analysis. The band alignment of strain-balanced GaAsN/GaAsBi, InPN/InPBi and InAsN/InAsBi is a type II. For InSbN/InSbBi heterostructure, the band lineup can be type I or II.

  15. Progress in III-V materials technology

    NASA Astrophysics Data System (ADS)

    Grant, Ian R.

    2004-12-01

    Compound semiconductors, in the form of GaAs and InP have achieved major commercial significance in areas of application such as mobile communications, displays and telecoms and offer a versatility of function beyond the capabilities of Si. III-V compounds, and in particular GaAs, have since their early development been the subject of defence related interest. Support from this sector established the basic materials technologies and nurtured development up until their commercial breakthrough into consumer products. GaAs, for example, now provides essential components for mobile phones and CD / DVD players. An overview is presented of the crystal growth and processing methods used in the manufacture of these materials. Current state of the art characteristics on crystal form and quality are discussed, together with the evolution of single crystal growth techniques. Consideration is given to how these principal compounds together with the minor materials, InSb, GaSb and InAs are employed in diverse applications over a broad spectral range, together with information on markets and future perspectives.

  16. Subnanometer scale characterization of III-V-heterostructures

    SciTech Connect

    Lakner, H.

    1996-12-31

    Heterostructures based on III-V semiconductors play a dominant role for the production of optoelectronic /1/ and electronic high-speed or high-frequency /2/ devices. The necessary band-gap engineering is achieved by optimized growth procedures which allow to change the chemical composition and the crystal structure (e.g., strain or ordering) on the subnanometer scale. The evaluation of individual heterointerfaces with respect to chemical composition and crystal structure requires characterization techniques which offer the necessary high spatial resolution. Scanning transmission electron microscopy (STEM) offers several of such quantitative techniques. It is the intention of this paper to demonstrate the capabilities of STEM in the subnanometer characterization of III-V-heterostructures based on InP-substrates. Additionally, the data obtained from nanocharacterization can be correlated to device performance.

  17. Investigation of new semiinsulating behavior of III-V compounds

    NASA Technical Reports Server (NTRS)

    Lagowski, Jacek

    1990-01-01

    The investigation of defect interactions and properties related to semiinsulating behavior of III-V semiconductors resulted in about twenty original publications, six doctoral thesis, one masters thesis and numerous conference presentations. The studies of new compensation mechanisms involving transition metal impurities have defined direct effects associated with deep donor/acceptor levels acting as compensating centers. Electrical and optical properties of vanadium and titanium levels were determined in GaAs, InP and also in ternary compounds InGaAs. The experimental data provided basis for the verification of chemical trends and the VRBE method. They also defined compositional range for III-V mixed crystals whereby semiinsulating behavior can be achieved using transition elements deep levels and a suitable codoping with shallow donor/acceptor impurities.

  18. III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics

    SciTech Connect

    Prucnal, Slawomir Zhou, Shengqiang; Ou, Xin; Facsko, Stefan; Oskar Liedke, Maciej; Bregolin, Felipe; Liedke, Bartosz; Grebing, Jochen; Fritzsche, Monika; Hübner, Rene; Mücklich, Arndt; Rebohle, Lars; Skorupa, Wolfgang; Helm, Manfred; Turek, Marcin; Drozdziel, Andrzej

    2014-02-21

    The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.

  19. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.; Misra, M.

    1997-10-14

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

  20. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.; Misra, Mira

    1997-01-01

    A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

  1. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    NASA Astrophysics Data System (ADS)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, Sanghyeon; Choi, Won Jun

    2016-02-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  2. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    PubMed Central

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun

    2016-01-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968

  3. Lazarevicite-type short-range ordering in ternary III-V nanowires

    NASA Astrophysics Data System (ADS)

    Schnedler, M.; Lefebvre, I.; Xu, T.; Portz, V.; Patriarche, G.; Nys, J.-P.; Plissard, S. R.; Caroff, P.; Berthe, M.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph.; Grandidier, B.

    2016-11-01

    Stabilizing ordering instead of randomness in alloy semiconductor materials is a powerful means to change their physical properties. We used scanning tunneling and transmission electron microscopies to reveal the existence of an unrecognized ordering in ternary III-V materials. The lazarevicite short-range order, found in the shell of InAs1 -xSbx nanowires, is driven by the strong Sb-Sb repulsion along <110 > atomic chains during their incorporation on unreconstructed {110 } sidewalls. Its spontaneous formation under group-III-rich conditions of growth offers the prospect to broaden the limited classes of ordered structures occurring in III-V semiconductor alloys.

  4. Precise measurement of charged defects in III-V compounds (supplement 2)

    NASA Technical Reports Server (NTRS)

    Soest, J. F.

    1973-01-01

    Experimental methods and related theory which will permit the measurement of low concentrations of vacancies and other defects in III-V compound semiconductors are discussed. Once the nature of these defects has been determined, this information can be incorporated into a transport theory for devices constructed from these materials, and experiments conducted to test the theory. The vacancies and other defects in the III-V compounds are detected by measurement of the nuclear magnetic resonance (NMR) line width. Most of the III-V compounds have at least one isotope with a nuclear quadrupole moment. In a crystal with a cubic crystal field (characteristic of most III-V compounds) there is no quadrupole splitting of the Zeeman resonance line. However, a defect removes the cubic symmetry locally and causes splitting which result in a change of the NMR width. This change can be used to detect the presence of vacancies.

  5. Hybrid III-V/silicon SOA for photonic integrated circuits

    NASA Astrophysics Data System (ADS)

    Kaspar, P.; Brenot, R.; Le Liepvre, A.; Accard, A.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Duan, G.-H.; Olivier, S.; Jany, Christophe; Kopp, C.; Menezo, S.

    2014-11-01

    Silicon photonics has reached a considerable level of maturity, and the complexity of photonic integrated circuits (PIC) is steadily increasing. As the number of components in a PIC grows, loss management becomes more and more important. Integrated semiconductor optical amplifiers (SOA) will be crucial components in future photonic systems for loss compensation. In addition, there are specific applications, where SOAs can play a key role beyond mere loss compensation, such as modulated reflective SOAs in carrier distributed passive optical networks or optical gates in packet switching. It is, therefore, highly desirable to find a generic integration platform that includes the possibility of integrating SOAs on silicon. Various methods are currently being developed to integrate light emitters on silicon-on-insulator (SOI) waveguide circuits. Many of them use III-V materials for the hybrid integration on SOI. Various types of lasers have been demonstrated by several groups around the globe. In some of the integration approaches, SOAs can be implemented using essentially the same technology as for lasers. In this paper we will focus on SOA devices based on a hybrid integration approach where III-V material is bonded on SOI and a vertical optical mode transfer is used to couple light between SOI waveguides and guides formed in bonded III-V semiconductor layers. In contrast to evanescent coupling schemes, this mode transfer allows for a higher confinement factor in the gain material and thus for efficient light amplification over short propagation distances. We will outline the fabrication process of our hybrid components and present some of the most interesting results from a fabricated and packaged hybrid SOA.

  6. MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

    NASA Astrophysics Data System (ADS)

    Park, Yeonjoon

    The advanced semiconductor material InGaAsN was grown with nitrogen plasma assisted Molecular Beam Epitaxy (MBE). The InGaAsN layers were characterized with High Resolution X-ray Diffraction (HRXDF), Atomic Fore Microscope (AFM), X-ray Photoemission Spectroscopy (XPS) and Photo-Luminescence (PL). The reduction of the band gap energy was observed with the incorporation of nitrogen and the lattice matched condition to the GaAs substrate was achieved with the additional incorporation of indium. A detailed investigation was made for the growth mode changes from planar layer-by-layer growth to 3D faceted growth with a higher concentration of nitrogen. A new X-ray diffraction analysis was developed and applied to the MBE growth on GaAs(111)B, which is one of the facet planes of InGaAsN. As an effort to enhance the processing tools for advanced semiconductor materials, gas assisted Focused Ion Beam (FIB) vertical milling was performed on GaN. The FIB processed area shows an atomically flat surface, which is good enough for the fabrication of Double Bragg Reflector (DBR) mirrors for the Blue GaN Vertical Cavity Surface Emitting Laser (VCSEL) Diodes. An in-situ electron beam system was developed to combine the enhanced lithographic processing capability with the atomic layer growth capability by MBE. The electron beam system has a compensation capability against substrate vibration and thermal drift. In-situ electron beam lithography was performed with the low pressure assisting gas. The advanced processing and characterization methods developed in this thesis will assist the development of superior semiconductor materials for the future.

  7. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, T.D.

    1998-12-08

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.

  8. Photodetectors using III-V nitrides

    DOEpatents

    Moustakas, Theodore D.

    1998-01-01

    A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

  9. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    DOEpatents

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  10. III-V Nanowire Array Growth by Selective Area Epitaxy

    SciTech Connect

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Tingwei; Dapkus, P. Daniel

    2011-12-23

    III-V semiconductor nanowires are unique material phase due to their high aspect ratio, large surface area, and strong quantum confinement. This affords the opportunity to control charge transport and optical properties for electrical and photonic applications. Nanoscale selective area metalorganic chemical vapor deposition growth (NS-SAG) is a promising technique to maximize control of nanowire diameter and position, which are essential for device application. In this work, InP and GaAs nanowire arrays are grown by NS-SAG. We observe enhanced sidewall growth and array uniformity disorder in high growth rate condition. Disorder in surface morphology and array uniformity of InP nanowire array is explained by enhanced growth on the sidewall and stacking faults. We also find that AsH{sub 3} decomposition on the sidewall affects the growth behavior of GaAs nanowire arrays.

  11. Nonclassical devices in SOI: Genuine or copyright from III V

    NASA Astrophysics Data System (ADS)

    Luryi, S.; Zaslavsky, A.

    2007-02-01

    The combination of semiconductor-on-insulator (SOI) substrates with ultrathin Si (or Ge) channel and gate insulator layers opens new opportunities for nonclassical CMOS-compatible devices and possibly optical sources. Unlike their III-V counterparts, which often came first, SOI-based devices have the crucial advantage of potential integrability with dominant silicon technology. We discuss the examples of lateral and vertical tunneling transistors, as well as a tunneling-based SOI intersubband laser. None of these devices has progressed beyond either proof-of-concept demonstrations or, in the case of the intersubband laser, a purely theoretical concept. Still, the unique characteristics deriving from quantum mechanical tunneling make such devices an interesting playground for innovative device research, especially as standard Si CMOS heads towards the rapidly approaching end of scaling.

  12. Modeling of ferromagnetic semiconductor devices for spintronics

    NASA Astrophysics Data System (ADS)

    Lebedeva, N.; Kuivalainen, P.

    2003-06-01

    We develop physical models for magnetic semiconductor devices, where a part of the device structure consists of a ferromagnetic semiconductor layer. First we calculate the effect of the exchange interaction between the charge carrier spins and the spins of the localized magnetic electrons on the electronic states, recombination processes, and charge transport in ferromagnetic semiconductors such as (Ga,Mn)As. Taking into account, e.g., the splitting of the conduction and valence bands due to the exchange interaction, we model the electrical characteristics of the basic magnetic semiconductor devices such as Schottky diodes consisting of a nonmagnetic metal/ferromagnetic semiconductor interface, pn diodes consisting of a ferromagnetic/nonmagnetic junction and bipolar transistors having a ferromagnetic emitter. The models predict that at temperatures close to the Curie temperature TC the electrical properties of the magnetic semiconductor devices become strongly dependent on the average spin polarization of the magnetic atoms. A feature in the models is that many device parameters such as diffusion lengths or potential barriers become spin dependent in magnetic semiconductor devices. In a ferromagnetic Schottky diode the sensitivity of the device current I to the external magnetic field may be as large as (∂I/∂B)I-1≈1/T at temperatures close to TC. In a ferromagnetic pn diode both the ideal and recombination currents become magnetic field dependent. In a ferromagnetic bipolar transistor the current gain shows the same sensitivity to the spin polarization as the dc current in the ferromagnetic pn diodes. According to our model calculations optimal structures showing the largest magnetization dependence of the electrical characteristics in III-V ferromagnetic semiconductor devices would be those where the magnetic side of the junction is of n type.

  13. FOREWORD: The physics of III-V nitrides The physics of III-V nitrides

    NASA Astrophysics Data System (ADS)

    Ridley, B. K.

    2009-04-01

    The evolution of semiconductor physics is driven by the increasing sophistication of the art of crystal growing and fabrication techniques. From Ge at the birth of the transistor, possibly the purest material ever grown, through Si, the work-horse of the crystal revolution, to the III-Vs, whose optical properties opened up a second front, namely, optoelectronics. Crystal growth with monolayer control gave us quantum wells, superlattices, quantum wires and quantum dots, along with the quantum Hall effect and quantized resistance. The potential for high-power devices triggered interest in the III-V nitrides with their large bandgaps. The nitrides mostly crystallize in the hexagonal form, and this has introduced the phenomenon of spontaneous polarization into mainstream semiconductor physics. Its effect manifests itself in huge electric fields in heterostructures like AlGaN/GaN which, in turn, causes the induction of substantial electron populations in the channel of a HFET without the need for doping. High-power microwave transistors have been successfully fabricated, even though there are features associated with spontaneous polarization that still needs clarifying. Another strange effect is the large electron population on the surface of InN. The lack of a suitable substrate for growing GaN has meant that the dislocation density is higher than we would wish, but that situation is expected to steadily improve. Given the current interest in the physics of nitrides, it is natural to come across a special issue devoted to this topic. The difficulty presented by the surface layer in InN in the attempt to measure transport properties is discussed in the paper by King et al. A property that can affect transport is the lifetime of optical phonons and its dependence on electron density. Measurements of phonon lifetime in InN are reported by Tsen and Ferry, and in GaN channels, via the measure of hot-electron fluctuations, by Matulionis. The dependence on electron density is

  14. Heterointegration of III-V on silicon using a crystalline oxide buffer layer

    NASA Astrophysics Data System (ADS)

    Bhatnagar, K.; Rojas-Ramirez, J. S.; Contreras-Guerrero, R.; Caro, M.; Droopad, R.

    2015-09-01

    The integration of III-V compound semiconductors with Si can combine the cost advantage and maturity of Si technology with the superior performance of III-V materials. We have achieved the heteroepitaxial growth of III-V compound semiconductors on a crystalline SrTiO3 buffer layer grown on Si(0 0 1) substrates. A two-step growth process utilizing a high temperature nucleation layer of GaAs, followed by a low-temperature GaAs layer at a higher growth rate was employed to achieve highly crystalline thick GaAs layers on the SrTiO3/Si substrates with low surface roughness as seen by AFM. The effect of the GaAs nucleation layer on different surface terminations for the SrTiO3 layer was studied for both on axis and miscut wafers, which led to the conclusion that the Sr terminated surface on miscut substrates provides the best GaAs films. Using GaAs/STO/Si as virtual substrates, we have optimized the growth of high quality GaSb using the interfacial misfit (IMF) dislocation array technique. This work can lead to the possibility of realizing infrared detectors and next-generation high mobility III-V CMOS within the existing Si substrate infrastructure.

  15. (Defect studies in III-V thin film semiconductors)

    SciTech Connect

    Not Available

    1991-01-01

    Our primary research objective in 90/91 has been to continue studying misfit dislocation confinement by patterning substrates into mesas before the epitaxial growth of strained layers. This report presents progress for many of the areas of our research. (JL)

  16. Chemical beam epitaxy growth of III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Mohummed Noori, Farah T.

    2013-12-01

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425-454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5-1 μm and of an array 40nm diameter with length is in the range 0.3-0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  17. Microstructural evaluation of heteroepitaxial III-V semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Chen, Eric Brice

    Microstructural features of single and multilayered strained (In xGa1-xAs/GaAs, (Al)GaAs1-ySb y/GaAs) and unstrained (In0.49Ga0.51P/GaAs) heteroepitaxial structures were evaluated. During growth of a 1.5% mismatched InxGa 1-xAs layer on GaAs at 470°C, real-time multibeam optical stress sensor measurements revealed an unexpected shoulder in the strain-thickness profile. Real-time data was used to pause film growth at pre-determined stress-states surrounding the shoulder region (pre-, mid- and post-shoulder) to probe its origin. Dislocation structure of each stress-state was characterized by transmission electron microscopy. The shoulder coincided with reactions between 60° dislocations forming edge dislocations, suggesting an increased dislocation mobility which is required for multiplication. Dislocation half-loops were observed via cross-sectional microscopy, resulting in rapid relaxation of the film. In-graded (InxGa1-xAs) and Sb-graded (Al0.5Ga0.5As1-ySby, GaAs 1-ySby) compositionally step-graded multilayer buffers were analyzed to determine the optimal alloy for preventing the propagation of threading dislocations to the epitaxial surface. Multilayers were graded from a lattice parameter of 0.564 nm to 0.591 nm (4.6% mismatch) over a 1 mum film thickness. Threading dislocation density in the top-most layer of the Sb-graded structures (≤109 cm-2) was lower than the In-graded alloy (>1010 cm-2). In the InxGa1-xAs structure, threading dislocations were observed to congregate in discrete channels directly correlated to surface crosshatches. As/Sb compositional modulations in the Sb-graded structures reveal a more planar growth surface, preventing threading dislocation trapping. Characterization of dislocation structure indicated a directional asymmetry in the 60° and edge dislocation density for the GaAs1-ySb y multilayer. Replacing Ga with Al0.5Ga0.5 in the Sb-graded ternary improved planarity, resulting in a more uniform dislocation density. Residual strain (calculated from quantitative x-ray analysis and dislocation density) in each of the buffer layers was within the bounds predicted by existing relaxation models and dependent upon lattice mismatch strain. Lattice-matched In0.49Ga0.51P-GaAs junctions as active regions of a heterojuction bipolar transistor were evaluated by high-resolution transmission electron microscopy and related to device performance. Microscopy was established as a feasible technique for characterizing interfacial roughness which was related to interface crystal quality (quantified by reverse-biased leakage currents) but not low-voltage device performance.

  18. Growth far from equilibrium: Examples from III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Kuech, Thomas F.; Babcock, Susan E.; Mawst, Luke

    2016-12-01

    The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs1-yBiy system is used here to elucidate the role of surface chemistry in the formation of a homogeneous metastable composition during the chemical vapor deposition of the alloy system.

  19. Free Surface Properties of III-V Compound Semiconductor Surfaces.

    DTIC Science & Technology

    1980-06-01

    Review of Modern Physics Vol. 42 #3 July 1980, p. 317. 2. A. Kahn, G. Cisneros, M. Bonn, P. Mark and C.B. Duke, Surface Science 71, 387 (1978). 3. A...Kahn, E. So, P. Mark , C.B. Duke, J. Vac. Sci. Technol. 15, 580 (1978). 4. R.J. Meyer, C.B. Duke, A. Paton, A. Kahn, E. So, P. Mark , Phys. Rev. B19 (1979...Yeh, J. Tsang, A. Kahn, P. Mark , Phys. Rev. (to be published). 7. E. So, Ph.D. Dissertation, Princeton University, Department of Electrical Engineering

  20. Ion Implantation in III-V Compound Semiconductors

    DTIC Science & Technology

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  1. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  2. Assembly of nanostructures in III-V semiconductor films

    NASA Astrophysics Data System (ADS)

    Lee-Feldman, Jennifer Y.

    In film growth, assembly of nanostructures allows precise placement and reliable dimensions for higher efficiency in devices. This work looks at two extremes of assembly: spontaneous assembly manipulated by experimental parameters and directed assembly by altering surface patterns. First we vary experimental procedures to change feature sizes, and then we directly assemble dots on patterned surfaces. The morphologies in these films are characterized and then reproduced. We examine two different strained material systems: mesa formation in 2 monolayer GaAs films on In0.53Ga0.47As/InP and quantum dots in 2 monolayer InAs films on GaAs. We employ focused ion beam (FIB) patterning on the latter system to direct the formation of quantum dots. When varying growth parameters in the GaAs films, the mesa-trench morphology shown by scanning tunneling microscopy images changes significantly. There is roughening and mesa narrowing at higher temperatures, and intermixing is confirmed by X-ray coherent Bragg rod analysis. We use a Ga adatom density model to correspond to step edge density to predict morphological trends. This shows the commonly used metric of VIII growth ratio is not applicable at low As growth rates because of roughening. In the second material system we grow InAs quantum dots on GaAs. Explorations of ex situ FIB patterning show the technique is not successful due to oxide desorption roughness. We instead use in vacuo FIB to successfully assemble quantum dots on FIB-irradiated holes. We vary growth conditions, irradiation dose, and periodicity to yield single or multiple quantum dots. Elastic kinetic Monte Carlo simulations help predict the number of dots at sites and show that dot nucleation begins within the hole walls. The simulations show agreement with multiple dots, but discrepancies arise because of the limited amount of intermixing and initial hole shape. We characterize the quantum dot shape and holes and attempt to reconcile the large range of sizes with our experiments. Photoluminescent structures grown from the FIB-patterned quantum dots are measured. Spatial mapping shows that the FIB decreases InAs quantum dot peaks. Transmission electron microscopy images indicate that the lowered emission is due to the presence of defects caused by FIB.

  3. Enhancing Hole Mobility in III-V Semiconductors

    DTIC Science & Technology

    2012-05-21

    in the channel and also to check for any residual strain present in the metamorphic buffer as it absorbs the lattice mismatch with the GaAs substrate...Figure 10 shows the rocking curves near the (004) GaAs peak for sample A1 (with In0.41Ga0.59Sb chan- nel) and sample B1 (GaSb channel with...superlattice of (AlAs)x(AlSb)1x). The different peaks in the rocking curve for sample A1 (Figure 10(a)) correspond to the peak from the GaAs substrate, the

  4. Nonlinear Frequency Conversion in III-V Semiconductor Photonic Crystals

    DTIC Science & Technology

    2012-03-01

    polarizing beamsplitter, SPF : short pass filter, PD: photodiode. The incident light traces the red line into the cavity sample. The second harmonic...33 CCD HWP HWP NPBSOLSample Polarizer Laser PBS PD Monochromator SPF 720 730 740 750 760 770 0 10 20 30 40 50 Wavelength [nm] C o u n ts a. b. c...OL: objective lens, PBS: polarizing beamsplitter, SPF : short pass filter, PD: photodiode. The incident light traces the red line into the cavity

  5. Dispersive Phonon Imaging in Iii-V Semiconductors.

    NASA Astrophysics Data System (ADS)

    Hebboul, Saad Eddine

    Low-temperature transport properties of high-frequency acoustic phonons are investigated in GaAs, InSb, InP and InAs using the phonon-imaging technique. In this method, a focused laser beam provides a movable heat source on one side of a cooled crystal (<=q2 K). A single small phonon detector on the opposite face records the transmitted heat flux as a function of propagation direction. Ballistic phonons channel along directions in the crystal which are completely determined by the detailed shape of constant-energy surfaces in wavevector space. The resulting focusing patterns are characterized by sharp phonon caustics which are clearly identified from the continuous background due to scattered phonons. In the dispersive regime, where phonon wavelength is comparable to atomic spacing, the angular positions of these caustic lines are very sensitive to phonon frequency, thus providing a novel test for lattice dynamics theories. Experiments are performed with superconducting tunnel junctions and Al bolometers to probe both the high-frequency and low -frequency regimes, respectively. We find that large-k ballistic phonons give rise to distinct focusing patterns in all four types of crystals, with thicknesses varying between 0.4 and 0.8 mm. Due to isotope scattering in the bulk, tunnel-junction experiments yield well-defined caustic patterns with a dominant frequency given by the detector gap 2Delta. In InSb, where zone boundary frequencies are small (nu_ {TA} ~ 1.2 THz), the frequency dependence of the dispersive phonon focusing patterns are measured using PbTl (0.43, 0.59 THz) and PbBi (0.69, 0.73, 0.78, 0.82 THz) tunnel junction detectors. The results are interpreted with Monte Carlo calculations based on rigid, dipole, shell, and bond-charge models. Although each model yields satisfactory fits to the previously measured dispersion curves, the predicted patterns show remarkable differences in the caustic structures. This result underscores the utility of phonon imaging in providing new information about the elastic forces between atoms in crystals.

  6. Passivation of III-V Compound Semiconductor Based Devices

    DTIC Science & Technology

    1993-11-29

    approximately 60 A/s. The AES, Rutherford Backscattering, FIIR and stress measurements were also carried out. This work was done in collaboration with Dr ...begun to collaborate with us on the project. A brief description of these projects are listed below: 8 a) HP Research Laboratory ( Drs . S. Camnitz, K. L...DC characterization of devices. b) University of California. Santa Barbara ( Drs . B. Young, L. A. Coldren and V. Malhotra): Passivation of GaAs-based

  7. Fabrication and characterization of nanostructured III-V thermoelectric materials

    NASA Astrophysics Data System (ADS)

    Novotny, Clint; Sharifi, Fred

    2013-09-01

    Approximately two thirds of all fossil fuel used is lost as heat. Thermoelectric materials, which convert heat into electrical energy, may provide a solution to partially recover some of this lost energy. To date, most commercial thermoelectric materials are too inefficient to be a viable option for most waste heat applications. This research proposes to investigate the fabrication and characterization of nanostructured III-V semiconductor thermoelectric materials with the goal of increasing the performance of existing technology. In order to improve thermoelectric material efficiency, either the lattice thermal conductivity must be lowered or the thermoelectric power factor must be increased. This research will focus on the latter by modifying the density of states of the semiconductor material and studying the effect of quantum confinement on the material's thermoelectric properties. Using focused ion beam milling, nanostructured cantilevers are fabricated from single crystal wafers. An all around gate dielectric and electrode are deposited to create a depletion region along the outer core of the cantilever, thus creating an inner conductive core. The Seebeck coefficient can then be measured as a function of confinement by varying the gate voltage. This technique can be applied to various material systems to investigate the effects of confinement on their thermoelectric properties.

  8. Power-efficient III-V/silicon external cavity DBR lasers.

    PubMed

    Zilkie, A J; Seddighian, P; Bijlani, B J; Qian, W; Lee, D C; Fathololoumi, S; Fong, J; Shafiiha, R; Feng, D; Luff, B J; Zheng, X; Cunningham, J E; Krishnamoorthy, A V; Asghari, M

    2012-10-08

    We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

  9. Heterogeneous integration of SiGe/Ge and III-V for Si photonics

    NASA Astrophysics Data System (ADS)

    Takenaka, Mitsuru; Kim, Younghyun; Han, Jaehoon; Kang, Jian; Ikku, Yuki; Cheng, Yongpeng; Park, Jinkwon; Takagi, Shinichi

    2016-05-01

    The heterogeneous integration of SiGe/Ge and III-V semiconductors gives us an opportunity to enhance functionalities of Si photonics platform through their superior material properties which lack in Si. In this paper we discuss what SiGe/Ge and III-V can bring to Si photonics. We have predicted that the light effective hole mass in strained SiGe results in the enhanced the free-carrier effects such as the plasma dispersion effect and free-carrier absorption. We observed significantly larger free-carrier absorption in the SiGe optical modulator than in the control Si device. By fabricating asymmetric Mach-Zehnder interferometer (MZI) SiGe optical modulators, the enhancement of the plasma dispersion effect in strained SiGe has been successfully demonstrated. Mid-infrared integrated photonics based on Ge waveguides on Si have also been investigated. Since Ge is transparent to the entire mid-infrared range, Ge photonic integrated circuits on the Ge-on-Insulator (GeOI) wafer are quite attractive. We have successfully fabricated the GeOI wafer with 2-μm-thick buried oxide (BOX) layer by wafer bonding. The passive waveguide components based on Ge strip waveguides have been demonstrated on the GeOI. We have also demonstrated carrier-injection Ge variable optical attenuators. We have proposed and investigate the III-V CMOS photonics platform by using the III-V on Insulator (IIIV- OI) on a Si wafer. The strong optical confinement in the III-V-OI enables us to achieve high-performance photonic devices. We have successfully demonstrated InGaAsP MZI optical switch with the low on-state crosstalk on the III-V-OI. Ultra-low dark current waveguide InGaAs PDs integrated with an InP grating coupler are also achieved.

  10. Nonmagnetic UHV Optical Viewports

    DTIC Science & Technology

    2005-01-01

    Nonmagnetic UHV Optical Viewports Scott Crane and Chrisopher R. Ekstrom Time Service Department, Clock Development Division U. S. Naval... time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the...Naval Observatory, Time Service Department,Clock Development Division,Washington,DC,20392 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING

  11. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    NASA Astrophysics Data System (ADS)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  12. An extended Hückel study of the electronic properties of III-V compounds and their alloys

    NASA Astrophysics Data System (ADS)

    Ribeiro, Ingrid A.; Ribeiro, Fabio J.; Martins, A. S.

    2014-05-01

    In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT). In particular, this paper is focused on the dependency between band gap and the applied pressure and also the alloy composition.

  13. Antimony Based III-V Thermophotovoltaic Devices

    SciTech Connect

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  14. Transferable tight binding model for strained group IV and III-V heterostructures

    NASA Astrophysics Data System (ADS)

    Tan, Yaohua; Povolotskyi, Micheal; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

    Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. For reliable prediction of device performance, it is critical to have a numerical efficient model that are transferable to material interfaces. In this work, we present an empirical tight binding (ETB) model with transferable parameters for strained IV and III-V group semiconductors. The ETB model is numerically highly efficient as it make use of an orthogonal sp3d5s* basis set with nearest neighbor inter-atomic interactions. The ETB parameters are generated from HSE06 hybrid functional calculations. Band structures of strained group IV and III-V materials by ETB model are in good agreement with corresponding HSE06 calculations. Furthermore, the ETB model is applied to strained superlattices which consist of group IV and III-V elements. The ETB model turns out to be transferable to nano-scale hetero-structure. The ETB band structures agree with the corresponding HSE06 results in the whole Brillouin zone. The ETB band gaps of superlattices with common cations or common anions have discrepancies within 0.05eV.

  15. Thin-Film III V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs

    NASA Astrophysics Data System (ADS)

    Brouckaert, Joost; Roelkens, Gunther; van Thourhout, Dries; Baets, Roel

    2007-04-01

    We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic silicon-on-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bonding unprocessed III V dies onto the SOI substrate using an intermediate adhesive layer. Both benzocyclobutene and spin-on glass are studied and compared as bonding agents. After the removal of the III V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of InP/InGaAsP laser diodes on SOI. A new design of an evanescently coupled metal semiconductor metal detector is proposed, proving the ability to obtain compact and highly efficient integrated InGaAs photodetectors.

  16. Pressure-driven phase transition from antiferromagnetic semiconductor to nonmagnetic metal in the two-leg ladders AFe2X3 ( A=Ba,K; X=S,Se)

    DOE PAGES

    Zhang, Yang; Lin, Lingfang; Zhang, Jun -Jie; ...

    2017-03-15

    The recent discovery of superconductivity in BaFe2S3 has stimulated considerable interest in 123-type iron chalcogenides. This material is the first reported iron-based two-leg ladder superconductor, as opposed to the prevailing two-dimensional layered structures of the iron superconductor family. Once the hydrostatic pressure exceeds 11 GPa, BaFe2S3 changes from a semiconductor to a superconductor below 24 K. Although previous calculations correctly explained its ground-state magnetic state and electronic structure, the pressure-induced phase transition was not successfully reproduced. In this work, our first-principles calculations show that with increasing pressure the lattice constants as well as local magnetic moments are gradually suppressed, followedmore » by a first-order magnetic transition at a critical pressure, with local magnetic moments dropping to zero suddenly. Our calculations suggest that the self-doping caused by electrons transferred from S to Fe may play a key role in this transition. The development of a nonmagnetic metallic phase at high pressure may pave the way to superconductivity. As extensions of this effort, two other 123-type iron chalcogenides, KFe2S3 and KFe2Se3, have also been investigated. KFe2S3 also displays a first-order transition with increasing pressure, but KFe2Se3 shows instead a second-order or weakly first-order transition. Here, the required pressures for KFe2S3 and KFe2Se3 to quench the magnetism are higher than for BaFe2S3. Further experiments could confirm the predicted first-order nature of the transition in BaFe2S3 and KFe2S3, as well as the possible metallic/superconductivity state in other 123-type iron chalcogenides under high pressure.« less

  17. Controlled formation of epitaxial III-V nanowires for device applications

    NASA Astrophysics Data System (ADS)

    Martensson, Thomas

    2007-03-01

    For the realization of devices with dimensions on the 10 nm scale, there is today a great interest in the possible use of self-assembly as a tool. In this talk will be described the state-of-the-art in growth of epitaxially nucleated, vertically standing semiconductor nanowires made from III-V semiconductors, with high level of control of dimensions, position and structural properties. Such wires hold great promise for use in future electronics and photonics applications. Three key aspects will be specifically addressed, namely: (1) The combination of top-down and bottom-up processes in lithographically aided formation of nanowires. A concern from industry is that bottom up techniques should suffer from ``fundamental placement problem[s], i.e. there is no practical and reliable way to precisely align and position them.'' (Chau R., et al. Opportunities and challenges of III-V nanoelectronics for future high-speed, low-power logic applications. (2005)). One way to resolve this issue is lithography where individual nanowire site control with high precision can be achieved. Electron beam lithography has the advantage of being a flexible high-resolution method, whereas nanoimprint lithography offers great opportunities for up-scaling and high-throughput processing. (2) The successful growth of III-V nanowires on silicon, including designed heterostructures. The special nanowire geometry with tens of nanometer radius and very small nanowire / substrate interface, enables monolithic integration of high-performance III-V materials on Silicon substrates. As an example, GaAsP heterostructure nanowires for photonic applications are discussed. Also the formation of InAs nanowires for high-speed and low-power-electronics directly on Si will be described. In the latter process, the use of foreign metal particles for wire growth is completely avoided, greatly reducing compatibility concerns between CMOS and nanowire technology. (3) Nanowire devices, such as field

  18. III-V High-Efficiency Multijunction Photovoltaics (Fact Sheet)

    SciTech Connect

    Not Available

    2011-06-01

    Capabilities fact sheet that includes scope, core competencies and capabilities, and contact/web information for III-V High-Efficiency Multijunction Photovoltaics at the National Center for Photovoltaics.

  19. Progress Towards III-V Photovoltaics on Flexible Substrates

    NASA Technical Reports Server (NTRS)

    McNatt, Jeremiah S.; Pal, AnnaMaria T.; Clark, Eric B.; Sayir, Ali; Raffaelle, Ryne P.; Bailey, Christopher G.; Hubbard, Seth M.; Maurer, William F.; Fritzemeier, Les

    2008-01-01

    Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

  20. Heralded single-photon source in a III-V photonic crystal.

    PubMed

    Clark, Alex S; Husko, Chad; Collins, Matthew J; Lehoucq, Gaelle; Xavier, Stéphane; De Rossi, Alfredo; Combrié, Sylvain; Xiong, Chunle; Eggleton, Benjamin J

    2013-03-01

    In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g(2) (0) of 0.06 proving nonclassical operation in the single photon regime.

  1. III-V quantum light source and cavity-QED on silicon.

    PubMed

    Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

    2013-01-01

    Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

  2. 'Junction-Level' Heterogeneous Integration of III-V Materials with Si CMOS for Novel Asymmetric Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung

    Driven by Moore's law, semiconductor chips have become faster, denser and cheaper through aggressive dimension scaling. The continued scaling not only led to dramatic performance improvements in digital logic applications but also in mixed-mode and/or communication applications. Moreover, size/weight/power (SWAP) restrictions on all high-performance system components have resulted in multi-functional integration of multiple integrated circuits (ICs)/dies in 3D packages/ICs by various system-level approaches. However, these approaches still possess shortcomings and in order to truly benefit from the most advanced digital technologies, the future high-speed/high power devices for communication applications need to be fully integrated into a single CMOS chip. Due to limitations in Si device performance in high-frequency/power applications as well as expensive III-V compound semiconductor devices with low integration density, heterogeneous integration of compound semiconductor materials/devices with Si CMOS platform has emerged as a viable solution to low-cost high-performance ICs. In this study, we first discuss on channel and drain engineering approaches in the state-of-the-art multiple-gate field-effect transistor to integrate III-V compound semiconductor materials with Si CMOS for improved device performance in mixed-mode and/or communication applications. Then, growth, characterization and electrical analysis on small-area (diameter < 100nm) complete selective-area epitaxy of GaAs/GaN will be demonstrated for achieving 'dislocation-free' III-V compound semiconductor film on a Si(001) substrate. Based on a success in dislocation-free heterogeneous III-V film growth, we propose a novel ultra-scaled 'junction-level' heterogeneous integration onto mainstream Si CMOS platform. Device architecture and its key features to overcome aforementioned challenges will be given to demonstrate the potential to improve the overall system performance with diverse functionality.

  3. Manipulating Surface States of III-V Nanowires with Uniaxial Stress.

    PubMed

    Signorello, G; Sant, S; Bologna, N; Schraff, M; Drechsler, U; Schmid, H; Wirths, S; Rossell, M D; Schenk, A; Riel, H

    2017-04-10

    III-V compound semiconductors are indispensable materials for today's high-end electronic and optoelectronic devices and are being explored for next-generation transistor logic and quantum technologies. III-V surfaces and interfaces play the leading role in determining device performance, and therefore, methods to control their electronic properties have been developed. Typically, surface passivation studies demonstrated how to limit the density of surface states. Strain has been widely used to improve the electronic transport properties and optoelectronic properties of III-Vs, but the potential of this technology to modify the surface properties still remains to be explored. Here we show that uniaxial stress induces a shift in the energy of the surface states of III-V nanowires, modifying their electronic properties. We demonstrate this phenomenon by modulating the conductivity of InAs nanowires over 4 orders of magnitude with axial strain ranging between -2.5% in compression and 2.1% in tension. The band bending at the surface of the nanostructure is modified from accumulation to depletion reversibly and reproducibly. We provide evidence of this physical effect using a combination of electrical transport measurement, Raman spectroscopy, band-structure modeling, and technology computer aided design (TCAD) simulations. With this methodology, the deformation potentials for the surface states are quantified. These results reveal that strain technology can be used to shift surface states away from energy ranges in which device performance is negatively affected and represent a novel route to engineer the electronic properties of III-V devices.

  4. III-V/Si hybrid photonic devices by direct fusion bonding

    NASA Astrophysics Data System (ADS)

    Tanabe, Katsuaki; Watanabe, Katsuyuki; Arakawa, Yasuhiko

    2012-04-01

    Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C sufficiently low to inhibit active material degradation. We have demonstrated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration.

  5. III-V/Si hybrid photonic devices by direct fusion bonding

    PubMed Central

    Tanabe, Katsuaki; Watanabe, Katsuyuki; Arakawa, Yasuhiko

    2012-01-01

    Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost, light-weight photovoltaics. Here we present a GaAs/Si direct fusion bonding technique to provide highly conductive and transparent heterojunctions by heterointerfacial band engineering in relation to doping concentrations. Metal- and oxide-free GaAs/Si ohmic heterojunctions have been formed at 300°C; sufficiently low to inhibit active material degradation. We have demonstrated 1.3 μm InAs/GaAs quantum dot lasers on Si substrates with the lowest threshold current density of any laser on Si to date, and AlGaAs/Si dual-junction solar cells, by p-GaAs/p-Si and p-GaAs/n-Si bonding, respectively. Our direct semiconductor bonding technique opens up a new pathway for realizing ultrahigh efficiency multijunction solar cells with ideal bandgap combinations that are free from lattice-match restrictions required in conventional heteroepitaxy, as well as enabling the creation of novel high performance and practical optoelectronic devices by III-V/Si hybrid integration. PMID:22470842

  6. All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

    PubMed

    Wu, Yingchen; Huang, Qiangsheng; Keyvaninia, Shahram; Katumba, Andrew; Zhang, Jing; Xie, Weiqiang; Morthier, Geert; He, Jian-Jun; Roelkens, Gunther

    2016-09-05

    We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion.

  7. Research progress of III-V laser bonding to Si

    NASA Astrophysics Data System (ADS)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  8. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  9. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  10. Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

    NASA Astrophysics Data System (ADS)

    O'Regan, T. P.; Fischetti, M. V.; Sorée, B.; Jin, S.; Magnus, W.; Meuris, M.

    2010-11-01

    We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-κ dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the III-V substrate and with the interfacial excitations resulting from the coupling of insulator and substrate optical modes among themselves and with substrate plasmons. In treating scattering with the substrate LO-modes, multisubband dynamic screening is included and compared to the dielectric screening in the static limit and with the commonly used screening model obtained by defining an effective screening wave vector. The electron mobility components limited by substrate LO phonons and interfacial modes are calculated for In0.53Ga0.47As and GaAs substrates with SiO2 and HfO2 gate dielectrics. The mobility components limited by the LO-modes and interfacial phonons are also investigated as a function of temperature. Scattering with surface roughness, fixed interface charge, and nonpolar-phonons is also included to judge the relative impact of each scattering mechanism in the total mobility for In0.53Ga0.47As with HfO2 gate dielectric. We show that InGaAs is affected by interfacial-phonon scattering to an extent larger than Si, lowering the expected performance, but probably not enough to question the technological relevance of InGaAs.

  11. Highly Scaled High Dielectric Constant Oxides on III-V CMOS with Low Interface Trap and Low Leakage Densities

    NASA Astrophysics Data System (ADS)

    Chobpattana, Varistha

    Complementary metal-oxide-semiconductor (CMOS) transistors are being aggressively scaled, reaching the fundamental limits of silicon. Due to their much higher electron mobilities, III-V semiconductors are being considered as alternative channel materials to potentially replace Si. This requires the integration of high dielectric constant (high-k) oxides with III-V semiconductor layers, which is the most significant challenge to achieve high performance of III-V metal-oxide-semiconductor field-effect transistors (MOSFETs). Large interface trap densities, inherent to these interfaces, degrade the transistor performance. In this dissertation, we utilize in-situ atomic layer deposition (ALD) combined with surface passivation techniques to reduce the interface traps densities between high-k oxides and III-V semiconductors to obtain highly scaled, low defect density interfaces. Cycles of hydrogen and/or nitrogen plasmas and metal-organic precursors were applied directly onto n- and p type In0.53 Ga0.47As surfaces before high-k oxide ALD. The high-k oxides investigated include Al2O 3, HfO2, ZrO2, and TiO2. We examined the electrical characteristics of MOS capacitors (MOSCAPs), surface morphology of the surface, and chemical components of the interface. High quality interfaces of high-k oxide and n-type In0.53Ga0.47As with low interface trap densities (Dit) of 1012 eV-1 cm-2, low leakage current density, and high capacitance densities gate stacks (>5 muF/cm 2) were achieved by the optimized cycles of nitrogen plasma+tetrakis(dimethylamido)titanium (TDMAT) ALD surface cleaning. Using x-ray photoelectron spectroscopy, the interface region indicates that the removing As-oxides, sub-oxides, and As-As bonding are responsible for decreasing frequency dispersion in the midgap region of the n-type In0:53Ga0:47As, reducing midgap Dit, and unpinning Fermi level. The modified interface chemistry from Al2O3 to TiO2 leads to lower frequency dispersion in accumulation. The highly

  12. Silicon surface preparation for III-V molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Madiomanana, K.; Bahri, M.; Rodriguez, J. B.; Largeau, L.; Cerutti, L.; Mauguin, O.; Castellano, A.; Patriarche, G.; Tournié, E.

    2015-03-01

    We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ process is composed of cycles of HF dip and O2 plasma treatments. Ellipsometry and atomic force microscopy performed after each step during the substrate preparation reveal surface cleaning and de-oxidation. The in situ treatment consists in flash annealing the substrate in the MBE chamber prior to epitaxial growth. GaSb-based multiple quantum well heterostructures emitting at 1.55 μm were grown by MBE on Si substrates prepared by different methods. Structural characterizations using XRD and TEM coupled with photoluminescence spectroscopy demonstrates the efficiency of our preparation process. This study thus unravels a simple and reproducible protocol to prepare the Si surface prior to III-V MBE.

  13. Super-High Iii-V Tandem and Multijunction Cells

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Masafumi

    2015-10-01

    The following sections are included: * Introduction * Principles of super-high-efficiency multijunction solar cells * Epitaxial technologies for growing III-V compound cells * Monolithic vs. multi-terminal connection modes * Key issues for realising high-efficiency multijunction solar cells * High-efficiency InGaP/GaAs/Ge three-junction solar cells and their space applications * Multijunction solar cells: recent results * Future directions * Acknowledgements * References

  14. Method of fabricating vertically aligned group III-V nanowires

    DOEpatents

    Wang, George T; Li, Qiming

    2014-11-25

    A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

  15. Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics

    NASA Astrophysics Data System (ADS)

    Thathachary, Arun V.

    With transistor technology close to its limits for power constrained scaling and the simultaneous emergence of mobile devices as the dominant driver for new scaling, a pathway to significant reduction in transistor operating voltage to 0.5V or lower is urgently sought. This however implies a fundamental paradigm shift away from mature Silicon technology. III-V compound semiconductors hold great promise in this regard due to their vastly superior electron transport properties making them prime candidates to replace Silicon in the n-channel transistor. Among the plethora of binary and ternary compounds available in the III-V space, InxGa1-xAs alloys have attracted significant interest due to their excellent electron mobility, ideally placed bandgap and mature growth technology. Simultaneously, electrostatic control mandates multigate transistor designs such as the FinFET at extremely scaled nodes. This dissertation describes the experimental realization of III-V FinFETs incorporating InXGa1-XAs heterostructure channels for high performance, low power logic applications. The chapters that follow present experimental demonstrations, simulations and analysis on the following aspects (a) motivation and key figures of merit driving material selection and design; (b) dielectric integration schemes for high-k metal-gate stack (HKMG) realization on InXGa 1-XAs, including surface clean and passivation techniques developed for high quality interfaces; (c) novel techniques for transport (mobility) characterization in nanoscale multi-gate FET architectures with experimental demonstration on In0.7Ga0.3As nanowires; (d) Indium composition and quantum confined channel design for InXGa 1-XAs FinFETs and (e) InAs heterostructure designs for high performance FinFETs. Each chapter also contains detailed benchmarking of results against state of the art demonstrations in Silicon and III-V material systems. The dissertation concludes by assessing the feasibility of InXGa 1-XAs Fin

  16. Lattice-Mismatched III-V Epilayers for High-Efficiency Photovoltaics

    SciTech Connect

    Ahrenkiel, Scott Phillip

    2013-06-30

    The project focused on development of new approaches and materials combinations to expand and improve the quality and versatility of lattice-mismatched (LMM) III-V semiconductor epilayers for use in high-efficiency multijunction photovoltaic (PV) devices. To address these goals, new capabilities for materials synthesis and characterization were established at SDSM&T that have applications in modern opto- and nano-electronics, including epitaxial crystal growth and transmission electron microscopy. Advances were made in analyzing and controlling the strain profiles and quality of compositional grades used for these technologies. In particular, quaternary compositional grades were demonstrated, and a quantitative method for characteristic X-ray analysis was developed. The project allowed enhanced collaboration between scientists at NREL and SDSM&T to address closely related research goals, including materials exchange and characterization.

  17. Design High-Efficiency III-V Nanowire/Si Two-Junction Solar Cell

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Zhang, Y.; Zhang, D.; He, S.; Li, X.

    2015-06-01

    In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current matching between each subcell. Two key factors (minority carrier lifetime, surface recombination velocity) affecting power conversion efficiency (PCE) of the solar cell are highlighted, and a practical guideline to design high-efficiency two-junction solar cell is thus provided. Considering the practical surface and bulk defects in GaInP semiconductor, a promising PCE of 27.5 % can be obtained. The results depict the usefulness of integrating NWs to construct high-efficiency multi-junction III-V solar cells.

  18. New III-V cell design approaches for very high efficiency

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O'Bradovich, G.J.; Young, M.P. )

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  19. Long-wave infrared (LWIR) detectors based on III-V materials

    NASA Technical Reports Server (NTRS)

    Maserjian, Joseph

    1991-01-01

    Future NASA missions for earth observation and planetary science require large photovoltaic detector arrays with high performance in the long wavelength region to 18 microns and at operating temperatures above 65 K where single-cycle long-life cryocoolers are being developed. Since these detector array requirements exceed the state of current HgCdTe technology, alternative detector materials are being investigated as a possible option for future missions. Advanced growth techniques (e.g., MBE and MOCVD) of column III-V semiconductors have opened opportunities for engineering new detector materials and device structures. The technical approaches under investigation at JPL (with university and industry participation) include: quantum well infrared photodetectors, heterojunction internal photoemission (HIP) photodetectors, type-II strained layer superlattices, and nipi doping superlattices. Each of these options are briefly described with some of their pros and cons. A more detailed description is given for the HIP approach being pioneered at JPL.

  20. III-V alloy heterostructure high speed avalanche photodiodes

    NASA Technical Reports Server (NTRS)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

  1. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    SciTech Connect

    Boettcher, Shannon; Greenaway, Ann; Boucher, Jason; Aloni, Shaul

    2016-02-10

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substrates conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial

  2. Toward a III-V Multijunction Space Cell Technology on Si

    NASA Technical Reports Server (NTRS)

    Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

    2007-01-01

    High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red

  3. III-V-on-silicon multi-frequency lasers.

    PubMed

    Keyvaninia, S; Verstuyft, S; Pathak, S; Lelarge, F; Duan, G-H; Bordel, D; Fedeli, J-M; De Vries, T; Smalbrugge, B; Geluk, E J; Bolk, J; Smit, M; Roelkens, G; Van Thourhout, D

    2013-06-03

    Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths.

  4. III-V Compound Detectors for CO2 DIAL Measurements

    NASA Technical Reports Server (NTRS)

    Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Ismail, Syed; Singh, Upendra N.

    2005-01-01

    Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

  5. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  6. MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

    ScienceCinema

    Palmstrom, Chris [University of California, Santa Barbara, California, United States

    2016-07-12

    Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

  7. Liquid phase epitaxy of binary III-V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

    NASA Astrophysics Data System (ADS)

    Wutzler, Rene; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang

    2015-05-01

    The integration of III-V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III-V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO2/Si/SiO2 layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III-V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

  8. Methods for fabricating thin film III-V compound solar cell

    DOEpatents

    Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

    2011-08-09

    The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

  9. In situ characterisation of epiready III V substrates for MOVPE

    NASA Astrophysics Data System (ADS)

    Allwood, D. A.; Grant, I. R.; Mason, N. J.; Palmer, R. A.; Walker, P. J.

    2000-12-01

    The use of the term epiready in relation to III-V substrates in MOVPE is ill defined and poorly understood. In this paper we attempt to clarify some of the issues associated with the term epiready, in particular, the thickness and distribution of native oxide on the surface of a GaAs wafer. The surface quality of a wafer is established at three stages, fresh from the packet, oxide removed, and after growth. The surface is assessed by means of atomic force microscopy on a microscopic level and laser light scattering and oxide thickness mapping on a macroscopic scale. GaAs substrates from long-term storage are also examined. It is shown that even long-term stored wafers (in excess of six years) with quite thick native oxide layers can be successfully deoxidised to give atomically flat terraces and can subsequently be used for successful homoepitaxial growth provided that atomic hydrogen (in this case, from the arsenic precursor) is used in the deoxidation stage. No difference between various manufacturers substrates has been found in respect to storage and subsequent use, nor has any difference been established between doped and undoped wafers.

  10. Fullerene Molecules and Other Clusters of III-V Compounds

    NASA Astrophysics Data System (ADS)

    Hira, Ajit; Auxier, John, II; Lucero, Melinda

    2010-03-01

    The goal of the our work is to derive geometries of fullerene-like cages and other clusters of atoms from groups III and V of the periodic table. Our previous research focused on Carbon Fullerenes and on GanAsn clusters (n = 1 thru 12). Our research group has made an original discovery about GanAsn clusters. In our work on nanotechnology to date, we used the hybrid ab initio methods of quantum chemistry to derive the different geometries for the clusters of interest. We also calculated binding energies, bond-lengths, ionization potentials, electron affinities and HOMO-LUMO gaps, and IR spectra for these geometries. Of particular significance was the magic number for GaAs cluster stability that we found at n = 8. This is important because materials containing controlled III-V nanostructures provide the capability of preparing new classes of materials with enhanced optical, magnetic, chemical sensor and photo-catalytic properties. The second phase of the investigation will examine the effects of confinement on the optical properties the clusters. It will be interesting to observe novel linear as well as nonlinear optical processes in them. The third phase of the investigation will focus on the improved design of solar cells based on the optical properties of the clusters.

  11. Ion implantation for high performance III-V JFETS and HFETS

    SciTech Connect

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-06-01

    Ion implantation has been an enabling technology for realizing many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing for GaAs JFETs (joint field effect transistors), AlGaAs/GaAs HFETs (heterostructure field effect transistors), and InGaP or InAlP-barrier HFETs. The GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs are reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to absence of the deep donor level. An optimized P co- implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

  12. Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Walker, A. W.; Höhn, O.; Micha, D. N.; Wagner, L.; Helmers, H.; Bett, A. W.; Dimroth, F.

    2015-03-01

    Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can exploit the effects of photon recycling to achieve record-high open circuit voltages. Modeling such devices yields insight into the design and material criteria required to achieve high efficiencies. For a GaAs cell to reach 28 % efficiency without a substrate, the Shockley-Read-Hall (SRH) lifetimes of the electrons and holes must be longer than 3 μs and 100 ns respectively in a 2 μm thin active region coupled to a very high reflective (>99%) rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's non-radiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14 % to 33 % experimentally, whereas the model requires an increasing SRH lifetime for both electrons and holes to explain these experimental results. However, intermediate absorbing GaAs layers between the two sub-cells may also increasingly contribute to the luminescence coupling as a function of concentration.

  13. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  14. Bulk crystal growth of antimonide based III-V compounds for thermophotovoltaics applications

    SciTech Connect

    Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

    1998-10-01

    In this paper, the bulk growth of crack-free GaInSb and single phase GaInAsSb alloys are presented. A new class of III-V quasi-binary [A{sub III}B{sub V}]{sub 12{minus}x}[C{sub III}D{sub V}]{sub x} semiconductor alloys has been synthesized and bulk crystals grown from the melt for the first time. The present investigation is focused on the quasi-binary alloy (GaSb){sub 1{minus}x}(InAs){sub x} (0 < x < 0.05) due to its importance for thermophotovoltaic applications. The structural properties of this melt-grown quasi-binary alloy are found to be significantly different from the conventional quaternary compound Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} with composition x = y. Synthesis and growth procedures are discussed. For the growth of ternary alloys, it was demonstrated that forced convection or mixing in the melt during directional solidification of In{sub x}Ga{sub 1{minus}x}Sb (0 < x < 0.1) significantly reduces cracks in the crystals.

  15. Vertical III-V nanowire device integration on Si(100).

    PubMed

    Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

    2014-01-01

    We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

  16. Characterization of III-V materials by optical interferometry

    NASA Astrophysics Data System (ADS)

    Montgomery, P. C.; Vabre, P.; Montaner, D.; Fillard, J. P.

    1993-09-01

    Digital interference microscopy is a new measuring technique with submicron horizontal resolution and nanometric vertical resolution, that can be used for the three-dimensional analysis of surface defects and device features in many microelectronics applications on bulk materials and epitaxial layers. In this paper we show how certain defects can be analysed on III-V materials and devices using two different interferometric techniques. The choice of the technique depends on the height and the slope of the surface features to be measured. We show that small defects less than λ/2 in height, or surfaces with shallow continuous slopes upto one or two microns high are best profiled with the phase stepping technique (PSM) because of the high vertical resolution of 1 nm and the higher speed and precision. This is illustrated by studies of the surface polish of InP wafers, defects after chemical etching of tin doped InP, defects on an epitaxial layer of GaAs on InP and quantum dot structures on GaAs. For measuring devices which contain mesas and grooves with step heights greater than λ/2, the peak fringe scanning (PFSM) method is the better choice. The vertical resolution is slightly less (4 nm), but the vertical range is higher (upto 15 μm) as demonstrated with the measurement of an etched groove in a laser/detector device on a quaternary layer on InP, and a MESFET device on GaAs. Compared with electron microscopy and the new near field scanning techniques, digital interference microscopy has the advantages of ease of use and speed of analysis and being able to resolve certain problems that are difficult or not possible by other means, such as profiling deep narrow etched grooves, or measuring the relief of a surface hidden under a transparent layer. The main disadvantages are that the horizontal resolution is limited to the resolving power of the objective and that errors due to variations in the optical properties of the sample need to be taken into account. La

  17. Delta-doping of Semiconductors

    NASA Astrophysics Data System (ADS)

    Schubert, E. F.

    2005-08-01

    Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

  18. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon

    DTIC Science & Technology

    1989-12-01

    02139 In these experiments impurity-induced layer disordering (IILD) utilizing chemical re- duction of Si0 2 by Al (from Alo.sGao.As) is employed to...disordering (IILD) of AlxGa IxAs-GaAs quantum well heterostructure (QWH) crystals that utilize SiO 2 and Si3N4 diffusion source layers. The SiO 2- or...diffusion is demonstrated to result in the study of IILD in Al. Ga, - As-GaAs and other heterosys - intermixing of Ino.5 (Al. Ga, - )0 P layers grown

  19. Theoretical Study of Defect Signatures in III-V and II-VI Semiconductors

    DTIC Science & Technology

    2006-03-01

    calculated an acetylene molecule sH-C-C-Hd and found that indeed if we compress the C-C bond by 0.02 Å, both of the C-H bonds will increase, as expected, by...example, when NO þ ðNOÞO ! ðN2ÞO þOO, one less oxy - gen site is disturbed by the impurities after the reaction. In the right panel of Fig. 4, the

  20. Study of non-linear photoemission effects in III-V semiconductors

    SciTech Connect

    Tang, H.; Alley, R.K.; Aoyagi, H.

    1993-10-01

    Our experience at SLAC with photoemission-based polarized electron sources has shown that charge limit is an important phenomenon that may significantly limit the performance of a photocathode for applications requiring high intensity electron beams. In the process of developing high performance photocathodes for the ongoing and future SLC high energy physics programs, we have studied the various aspects of the charge limit phenomenon. We find that the charge limit effect arises as a result of non-linear response of a photocathode to high intensity light illumination. The size of the charge limit not only depends on the quantum efficiency of the cathode but also depends critically on the extraction electric field. In addition, we report the observation of charge oversaturation when the intensity of the incident light becomes too large.

  1. The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors

    DTIC Science & Technology

    2013-10-01

    Sun, “The case for using gap plasmon- polaritons in second- order optical nonlinear processes,” Optics Express, vol. 20, pp. 28717-28723 (2012). P. C...different from those used in the telecom range. Illustration 8: The case for using gap plasmon- polaritons in second-order optical nonlinear...wavelength infra-red radiation propagates in the surface-plasmon- polariton (SPP) mode, the losses in the metal, while significant, do not preclude

  2. Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces

    NASA Astrophysics Data System (ADS)

    Liu, Sheng; Sinclair, Michael B.; Saravi, Sina; Keeler, Gordon A.; Yang, Yuanmu; Reno, John; Peake, Gregory M.; Setzpfandt, Frank; Staude, Isabelle; Pertsch, Thomas; Brener, Igal

    2016-09-01

    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently, allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using Gallium Arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance we measure an absolute nonlinear conversion efficiency of ~2X10^(-5) with ~3.4 GW/cm2 pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.

  3. Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces.

    PubMed

    Liu, Sheng; Sinclair, Michael B; Saravi, Sina; Keeler, Gordon A; Yang, Yuanmu; Reno, John; Peake, Gregory M; Setzpfandt, Frank; Staude, Isabelle; Pertsch, Thomas; Brener, Igal

    2016-09-14

    Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 10(4) relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ∼2 × 10(-5) with ∼3.4 GW/cm(2) pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.

  4. Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides

    DTIC Science & Technology

    2006-03-02

    open circle line is extrinsic transconductance vs gate bias. Both are measured from a 50 x 2 MOSFET in the saturation region biased at Vds = 2 V...intrinsic transconductances, respectively. Fig. 2.18 shows the peak extrinsic and intrinsic transconductance versus gate length of MOSFETs with 1...and characterization of MOSFETs with thinner gate oxides The transconductance of a MOSFET is proportional to the gate capacitance .50 Reduction of

  5. Implantation enhanced interdiffusion of III/V semiconductor quantum well heterostructures

    NASA Astrophysics Data System (ADS)

    Piva, Paul Garrett

    2002-01-01

    The techniques of continuous-wave photoluminescence, cross-sectional scanning tunneling microscopy (XSTM), X-ray diffraction (XRD), and grazing incidence X-ray analysis (GIXA) are applied to the problem of determining the compositional profiles of as-grown, and intermixed InGaAs/InP quantum wells (QWs). Using the technique of ion implantation enhanced QW intermixing (QWII), the relative range of the implanted ions to the QWs is shown to modify the extent of interdiffusion occurring on each of the group III and group V sublattices. If ions are implanted through the QWs, XSTM and XRD measurements reveal that interdiffusion proceeds equally on both sublattices, while GIXA measurements indicate the compositional profiles to be non-Fickian and compatible with uniformly broadened square well distributions on both sublattices. Following shallow ion implants (where implanted ions are deposited between the QWs and the sample surface) XSTM and XRD measurements indicate preferential group V interdiffusion. Simulations of the superlattice envelope in the XRD rocking curves, and of the topographical profiles of the elastically relaxed (1--10) cleave surfaces obtained by XSTM, show the compositional profiles to be non-Fickian and compatible with a square well model for the broadened compositional profiles. In an application, QWII is used to integrate 980 nm InGaAs/GaAs/AlGaAs laser diodes with bandgap shifted extended cavities. Photo-reflectance thermography measurements indicate that these extended cavity structures are effective in reducing laser facet heating in spite of the generation of non-radiative centres in the QWs by 'through the well' arsenic implants. The QWII response of alternative "Al-free" InGaP based laser structures is examined, and found to be compatible with shallow implant QWII. As QWII processes can be initiated in these structures without generating displacement damage directly in the QWs during irradiation, this material system promises to extend the range of QWII applicability to include the bandgap shifting of active QW devices in GaAs based structures.

  6. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

    DTIC Science & Technology

    1992-06-01

    The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a planar 1 000 A of Si3N4 into rings [25-jim-wide...is grown in the center of the wave- guide in the lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser ... fabrication begins with the deposition on the near-field (NF) pattern in the inset (b) of the -2-jim- crystal of - 1000 Ak Si 3N4, which is patterned with

  7. Electronic Properties of Semimetal-Semiconductor (V/III-V) Heterostructures and Devices

    DTIC Science & Technology

    2007-11-02

    structures exhibiting negative differential resistances and Sb submicron loops displaying Aharonov - Bohm oscil- lations. 14. SUBJECT TERMS 17...resonant tunneling structures exhibiting negative differential resistances and Sb submicron loops displaying Aharonov - Bohm oscillations. B...structures were fabricated using ion beam milling techniques. Aharonov - Bohm effects were studied in a l|i.m diameter Sb loop. Variation of the sample

  8. Absolute pressure derivatives of deep level defects in III-V semiconductors

    SciTech Connect

    Nolte, D.D.; Walukiewicz, W.; Haller, E.E.

    1987-11-01

    Based on transition metal reference levels, we present absolute pressure derivatives for band-edges in GaAs and InP and defects in GaAs. The defect deformation potentials are directly related to the electron-lattice coupling which drives lattice relaxation around the defects. We find an exceedingly large inward lattice relaxation of the EL2 defect in GaAs upon electron emission. 12 refs., 1 fig.

  9. Group II Cubic Fluorides as Dielectrics for III-V Compound Semiconductors

    DTIC Science & Technology

    1989-09-01

    bllItY_Code Avail and/or D is t Special * -2- A. Statement of problem investigated Under ARO contract number DAAL03-86-K-0059, we have investigated the...interfaces with a low density of interface states; 3. the vapor pressures of CaF2 or SrF 2 are very low, and their evaporation is compatible with standard...and GaAs makes these systems potential candi- dates for wave guiding and other optoelectronic applications; 6. fluorides decom- pose (loss of F) under

  10. Nanometer-Scale Compositional Structure in III-V Semiconductor Heterostructures Characterized by Scanning Tunneling Microscopy

    SciTech Connect

    Allerman, A.A.; Bi, W.G.; Biefeld, R.M.; Tu, C.W.; Yu, E.T.; Zuo, S.L.

    1998-11-10

    Nanometer-scale compositional structure in InAsxP1.InNYAsxPl.x-Y/InP, grown by gas-source molecular-beam epitaxy and in InAsl-xPJkAsl$b#InAs heterostructures heterostructures grown by metal-organic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAsxP1-x alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within (T 11) and (111) crystal planes. Similar compositional structure is observed within InNYAsxP1-x-Y alloy layers. Imaging of InAsl-xp@Asl#bY superlattices reveals nanometer-scale clustering within both the hAsI-.p and InAsl$bY alloy layers, with preferential alignment of compositional features in the direction. Instances are observed of compositional structure correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice, constant relative to the surrounding alloy material appearing to propagate across the interface.

  11. Spin relaxation of Mn + h complexes in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Sliwa, Cezary

    2010-03-01

    Splitting between heavy and light hole levels is known to results in long spin relaxation times of holes confined in compressively strained InAs quantum dots [1]. We show theoretically that T1 can be elongated by orders of magnitudes if the hole resides on a Mn acceptor, as the p-d exchange interaction introduces a magnetic anisotropy barrier for spin relaxation. In order to compare the magnitudes of thermally activated over-barrier spin relaxation with a competing non-stationary quantum tunnelling at level anticrossings we evaluate also the expected magnitude of the ground state splitting by various intrinsic and extrinsic effects, including random in-plane strains. The relevance of our results for optical [2] and transport studies [3] of Mn-containing InAs quantum dots and quantum wells, respectively is examined and shown to elucidate the origin of the observed anisotropies and hystereses. [4pt] [1] D. Heiss et al., Phys. Rev. B 76, 241306(R) (2007). [0pt] [2] O Krebs et al., Phys. Rev. B 80, 165315 (2009).[0pt] [3] U. Wurstbauer et al., J. Crystal Growth 311, 2160 (2009); Phys. Rev. B 79, 155444 (2009); Phys. E [doi:10.1016/j.physe.2009.11.012].

  12. Theoretical Studies of High Field Transport in III-V Semiconductors.

    DTIC Science & Technology

    1980-09-01

    AD-A123 947 THEORETICAL STUDIES OF HIGH FIELD TRANSPORT IN Ill-V- 1/2 SENXCONDUCTORS(U) ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB H SHICHIJO...CATALOG NUMBER 4. TITLE (and Subtitleo S. TYPE Of REPORT & PERIOD COVERED THEORETICAL STUDIES OF HIGH FIELD TRANSPORT Technical Report IN IllI-V...Continue on reverse aide It necessary and identitfy by block number) High field transport , 3-5 semicopductors, Monte Carlo simulation 20. ABSTRACT

  13. Calculation of strain compensation thickness for III-V semiconductor quantum dot superlattices

    NASA Astrophysics Data System (ADS)

    Polly, S. J.; Bailey, C. G.; Grede, A. J.; Forbes, D. V.; Hubbard, S. M.

    2016-11-01

    Models based on continuum elasticity theory are discussed to calculate the necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained quantum wells (QW) or quantum dots (QD). These models are then expanded to cover material systems (substrates, QW or QD, and SC) composed of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, or InSb, as well as the ternary, quaternary, and higher order material alloys possible in the Al/Ga/In/P/As/Sb systems. SC thickness calculation methods were compared against dynamical scattering simulations and experimental X-ray diffraction measurements of the InAs/GaP/GaAs QD/SC/Substrate superlattices of varying SC thickness. Based on the reduced (but not eliminated) strain present, a further modified strain compensation thickness is calculated to maximize the number of SL repeat units before the onset of misfit dislocations is also calculated. These models have been assembled into a free application on nanoHUB for use by the community.

  14. Theoretical Crystal-Field Calculations for Rare-Earth Ions in III-V semiconductor Compounds

    DTIC Science & Technology

    1991-10-01

    has recently generated a great deal of interest, motivated primarily by potential applications in optoelectronic devices. Many groups have reported...values again correspond to ionic charges larger than ±3. In general , it is more difficult to fit data measured in emission than in absorption, and it is...Washougal, WA 98671 Attn SLCHD-NW-TN, Chief Attn SLCHD-NW-TS, Chief Departmento Quimica Fundamental Attn SLCHD-PO, Chief Universidade Federal de

  15. Advanced crystal growth techniques with III-V boron compound semiconductors

    NASA Astrophysics Data System (ADS)

    Whiteley, Clinton E.

    2011-12-01

    Semiconducting icosahedral boron arsenide, B12As2, is an excellent candidate for neutron detectors and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B12As2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron and arsenic in a sealed quartz ampoule. B12As2 crystals of 8--10 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48--72 hours and slowly cooled (3°C/hr). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), Raman spectroscopy, and defect selective etching confirmed that the crystals had the expected rhombohedral structure and a low density of defects (5x107 cm-2). The concentrations of residual impurities (nickel, carbon, etc) were found to be relatively high (1019 cm-3 for carbon) as measured by secondary ion mass spectrometry (SIMS) and elemental analysis by energy dispersive x-ray spectroscopy (EDS). The boron arsenide crystals were found to have favorable electrical properties (μ = 24.5 cm2 / Vs), but no interaction between a prototype detector and an alpha particle bombardment was observed. Thus, the flux growth method is viable for growing large B12As2 crystals, but the impurity concentrations remain a problem.

  16. Low Temperature Photoluminescence Study of Holmium and Thulium Implanted into III-V Semiconductors and Silicon.

    DTIC Science & Technology

    1990-12-01

    4f 8 7 F6 66 Dy 4f9 6 His/2 67 Ho 4f10 I8 68 Er 4f11 4 Il 5 / 2 69 Tm 4f’ 2 3 H6 70 Yb 4f’ 3 2 F7 /z 71 Lu 4f 1 4 ’so (after Pappalardo , 1978:176...I I i I Appendix I The Hamiltonian which describes a RE ion in a weak 3 crystal field is given by ( Pappalardo , 1978:187): i H = Ho - Hee + Hso + Hcf...York: Dover, 1971. Pappalardo , R. G. "Spectroscopy and Luminescence of Lanthanides and Actinides," Luminescence of Inorganic Solids edited by B

  17. Structural and magnetic properties of nanoclusters formed in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.

    2016-05-01

    Studies of X-ray magnetic circular dichroism (XMCD) were performed for a set of GaMnAs films with different Mn concentrations priory and after high temperature annealing (500 and 600 oC). After thermal treatment, GaMnAs samples with zinc blende structure and MnAs hexagonal nano-clusters were formed. In most of the samples, both types of clusters were detected by EXAFS studies. Dependence of the orbital and the spin moments on magnetic field were calculated from XMCD data by applying the sum rule. It was shown that both moments were much larger for MnAs nano-clusters. When these inclusions are formed even in a small amount, they dominate the XMCD signal. Interestingly, in some of samples the zinc blende GaMnAs nano-clusters were observed at a surface while in the bulk of hexagonal MnAs. Therefore, the location of magnetic ions in the host matrix is crucial for their magnetic properties. This unique information can be provided by XAS and XMCD.

  18. Optical Properties of III-V Semiconductor Nanostructures and Quantum Wells

    DTIC Science & Technology

    2006-12-31

    Form Approved REPORT DOCUMENTATION PAGE OMB No. 0704-0188 Publici,, ting u P for this collection of information is estimated to average 1 hour per...control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1 . REPORT DATE (DD-MM-YYYY) 2. REPORT TYPE 3. DATES COVERED (From - To) 31-12...wells. 5b. GRANT NUMBER FA9550-04- 1 -0002 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER Omar Manasreh 59. TASK NUMBER 5f. WORK UNIT NUMBER

  19. Scalable, epitaxy-free fabrication of super-absorbing sparse III-V nanowire arrays for photovoltaic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Cheng, Wen-Hui; Fountaine, Katherine T.; Bukowsky, Colton R.; Atwater, Harry A.

    2016-09-01

    III-V compound semiconductor nanowire arrays are promising candidates for photovoltaics applications due to their high volumetric absorption. Uniform nanowire arrays exhibit high absorption at certain wavelengths due to strong coupling into lossy waveguide modes. Previously, simulations predicted near-unity, broadband absorption in sparse semiconductor nanowire arrays (<5% fill fraction) with multi-radii and tapered nanowire array designs [1]. Herein, we experimentally demonstrate near-unity broadband absorption in InP nanowire arrays via a scalable, epitaxy-free fabrication method, using nanoimprint lithography and ICP-RIE to define nanowire arrays in bulk InP wafers. In addition to mask pattern design (wire radius and spacing) and etch chemistry (wire taper), appropriate selection of a hard mask for the InP etch is critical to precise dimension control and reproducibility. Polymer-embedded wires are removed from the bulk InP substrate by a mechanical method that facilitates extensive reuse of a single bulk InP wafer to synthesize many polymer-embedded nanowire array thin films. Arrays containing multiple nanowire radii and tapered nanowires were successfully fabricated. For both designs, the polymer-embedded arrays achieved 90% broadband absorption (λ=400-900 nm) in less than 100 nm planar equivalence of InP. The addition of a silver back reflector increased this broadband absorption to 95%. The repeatable process of imprinting, etching and peeling to obtain many nanowire arrays from one single wafer represents an economical manufacturing route for high efficiency III-V photovoltaics. [1] K.T. Fountaine, C.G. Kendall, Harry A. Atwater, "Near-unity broadband absorption designs for semiconducting nanowire arrays via localized radial mode excitation," Opt. Exp. (2014).

  20. Imaging electron emission from diamond and III V nitride surfaces with photo-electron emission microscopy

    NASA Astrophysics Data System (ADS)

    Nemanich, R. J.; English, S. L.; Hartman, J. D.; Sowers, A. T.; Ward, B. L.; Ade, H.; Davis, R. F.

    1999-05-01

    Wide bandgap semiconductors such as diamond and the III-V nitrides (GaN, AlN, and AlGaN alloys) exhibit small or even negative electron affinities. Results have shown that different surface treatments will modify the electron affinity of diamond to cause a positive or negative electron affinity (NEA). This study describes the characterization of these surfaces with photo-electron emission microscopy (PEEM). The PEEM technique is unique in that it combines aspects of UV photoemission and field emission. In this study, PEEM images are obtained with either a traditional Hg lamp or with tunable UV excitation from a free electron laser. The UV-free electron laser at Duke University provides tunable emission from 3.5 to greater than 7 eV. PEEM images of boron or nitrogen (N)-doped diamond are similar to SEM of the same surface indicating relatively uniform emission. For the N-doped samples, PEEM images were obtained for different photon energies ranging from 5.0 to 6.0 eV. In these experiments, the hydrogen terminated surface showed more intense PEEM images at lower photon energy indicating a lower photothreshold than annealed surfaces which are presumed to be adsorbate free. For the nitrides, the emission properties of an array of GaN emitter structures is imaged. Emission is observed from the peaks, and relatively uniform emission is observed from the array. The field at the sample surface is approximately 10 V/μm which is sufficient to obtain an image without UV light. This process is termed field emission electron microscopy (FEEM).

  1. Effects of Humidity on Non-Hermetically Packaged III-V Structures and Devices

    NASA Technical Reports Server (NTRS)

    Leon, R.; Martin, S.; Lee, T.; Okuno, J.; Ruiz, R.; Gauldin, R.; Gaidis, M.; Smith, R.

    1999-01-01

    High humidity and temperature test (known as 85/85 tests) were performed on various III-V devices and structures to determine environmental effects in non-hermetically packaged GaAs membrane mixer diodes.

  2. III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

    NASA Astrophysics Data System (ADS)

    Huang, Cheng-Ying

    As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

  3. Growth and Characterization of III-V Nitride Quantum Dots and Quantum Wires

    DTIC Science & Technology

    2010-03-26

    REPORT Growth and Characterization of III - V Nitride Quantum Dots and Quantum Wires 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: Our research program...ANSI Std. Z39.18 - 14-Sep-2009 Final report Growth and Characterization of III - V Nitride Quantum Dots and Quantum Wires Statement of the...has two interrelated components: the growth of GaN nanowires and the fabrication of electronic devices, including gas sensors, on these nanowires . A

  4. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    PubMed Central

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca i Cabarrocas, Pere

    2016-01-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs. PMID:27166163

  5. Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

    NASA Astrophysics Data System (ADS)

    Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

    2016-05-01

    The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

  6. Nuclear conversion theory: molecular hydrogen in non-magnetic insulators

    NASA Astrophysics Data System (ADS)

    Ilisca, Ernest; Ghiglieno, Filippo

    2016-09-01

    The hydrogen conversion patterns on non-magnetic solids sensitively depend upon the degree of singlet/triplet mixing in the intermediates of the catalytic reaction. Three main `symmetry-breaking' interactions are brought together. In a typical channel, the electron spin-orbit (SO) couplings introduce some magnetic excitations in the non-magnetic solid ground state. The electron spin is exchanged with a molecular one by the electric molecule-solid electron repulsion, mixing the bonding and antibonding states and affecting the molecule rotation. Finally, the magnetic hyperfine contact transfers the electron spin angular momentum to the nuclei. Two families of channels are considered and a simple criterion based on the SO coupling strength is proposed to select the most efficient one. The denoted `electronic' conversion path involves an emission of excitons that propagate and disintegrate in the bulk. In the other denoted `nuclear', the excited electron states are transients of a loop, and the electron system returns to its fundamental ground state. The described model enlarges previous studies by extending the electron basis to charge-transfer states and `continui' of band states, and focuses on the broadening of the antibonding molecular excited state by the solid conduction band that provides efficient tunnelling paths for the hydrogen conversion. After working out the general conversion algebra, the conversion rates of hydrogen on insulating and semiconductor solids are related to a few molecule-solid parameters (gap width, ionization and affinity potentials) and compared with experimental measures.

  7. Giant spin Seebeck effect in a non-magnetic material.

    PubMed

    Jaworski, C M; Myers, R C; Johnston-Halperin, E; Heremans, J P

    2012-07-11

    The spin Seebeck effect is observed when a thermal gradient applied to a spin-polarized material leads to a spatially varying transverse spin current in an adjacent non-spin-polarized material, where it gets converted into a measurable voltage. It has been previously observed with a magnitude of microvolts per kelvin in magnetically ordered materials, ferromagnetic metals, semiconductors and insulators. Here we describe a signal in a non-magnetic semiconductor (InSb) that has the hallmarks of being produced by the spin Seebeck effect, but is three orders of magnitude larger (millivolts per kelvin). We refer to the phenomenon that produces it as the giant spin Seebeck effect. Quantizing magnetic fields spin-polarize conduction electrons in semiconductors by means of Zeeman splitting, which spin-orbit coupling amplifies by a factor of ∼25 in InSb. We propose that the giant spin Seebeck effect is mediated by phonon-electron drag, which changes the electrons' momentum and directly modifies the spin-splitting energy through spin-orbit interactions. Owing to the simultaneously strong phonon-electron drag and spin-orbit coupling in InSb, the magnitude of the giant spin Seebeck voltage is comparable to the largest known classical thermopower values.

  8. Evidence of Formation of Superdense Nonmagnetic Cobalt

    PubMed Central

    Banu, Nasrin; Singh, Surendra; Satpati, B.; Roy, A.; Basu, S.; Chakraborty, P.; Movva, Hema C. P.; Lauter, V.; Dev, B. N.

    2017-01-01

    Because of the presence of 3d transition metals in the Earth’s core, magnetism of these materials in their dense phases has been a topic of great interest. Theory predicts a dense face-centred-cubic phase of cobalt, which would be nonmagnetic. However, this dense nonmagnetic cobalt has not yet been observed. Recent investigations in thin film polycrystalline materials have shown the formation of compressive stress, which can increase the density of materials. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.2–1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, and corroborated by polarized neutron reflectometry (PNR) experiments. Transmission electron microscopy provides further evidence. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers near the top of the film and at the film-substrate interface are nonmagnetic. The major part of the Co film has the usual density and magnetic moment. These results indicate the possibility of existence of nonmagnetic Co in the earth’s core under high pressure. PMID:28157186

  9. Evidence of Formation of Superdense Nonmagnetic Cobalt

    NASA Astrophysics Data System (ADS)

    Banu, Nasrin; Singh, Surendra; Satpati, B.; Roy, A.; Basu, S.; Chakraborty, P.; Movva, Hema C. P.; Lauter, V.; Dev, B. N.

    2017-02-01

    Because of the presence of 3d transition metals in the Earth’s core, magnetism of these materials in their dense phases has been a topic of great interest. Theory predicts a dense face-centred-cubic phase of cobalt, which would be nonmagnetic. However, this dense nonmagnetic cobalt has not yet been observed. Recent investigations in thin film polycrystalline materials have shown the formation of compressive stress, which can increase the density of materials. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.2–1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, and corroborated by polarized neutron reflectometry (PNR) experiments. Transmission electron microscopy provides further evidence. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers near the top of the film and at the film-substrate interface are nonmagnetic. The major part of the Co film has the usual density and magnetic moment. These results indicate the possibility of existence of nonmagnetic Co in the earth’s core under high pressure.

  10. Electrically-Generated Spin Polarization in Non-Magnetic Semiconductors

    DTIC Science & Technology

    2016-03-31

    to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE...polarization was shown to be inversely proportional to the measured momentum-dependent spin splitting in strained indium gallium arsenide, contrary to...polarization was shown to be inversely proportional to the measured momentum- dependent spin splitting in strained indium gallium arsenide, contrary to

  11. Piezoelectricity and growth polarization in III-V nitrides

    NASA Astrophysics Data System (ADS)

    Tavernier, Philip Ross

    GaN, AlN and InN form a relatively new class of semiconductors being utilized for their direct wide bandgap and polarization effects. Novel transistors using only piezoelectric doping have already surpassed the power handling capabilities of traditional silicon transistors. GaN light emitting diodes and solid state lasers, sensitive to the effects of piezoelectric polarization, are rapidly proliferating for use in lighting and next generation optical storage devices. GaN and AIN sensors and MEMS devices using the strong piezoelectric coupling coefficients of these materials are slowly being introduced into communications and chemical sensing applications. Despite the importance of the piezoelectric effect in each of these devices, relatively little is known of the magnitude of the effect in GaN and AIN as measured experimentally. The present work seeks to develop an experimental method of measuring the piezoelectric effect in thin films of GaN and AIN. Using a stress pulse induced by the single shot of a Nd:YAG laser, substrates of polar GaAs and ZnO are subject to short duration loading which generates piezoelectric dipoles. The orientation and magnitude of these dipoles induces current flow in an external circuit which is measured as a function time. By comparing the magnitude of the current generated in this circuit and the applied stress, it is shown that the axial piezoelectric constant, e 33, can be determined. Extending the measurement technique to thin films of GaN and AIN on sapphire and silicon, we have observed the magnitude and orientation of the piezoelectric dipoles in these materials. A value of 0.45 C/m2 for e33 in GaN was determined. This work motivated a closer investigation of the polarity of GaN during crystal growth. The addition of Mg during MOCVD was found to cause a uniform inversion of the growth axis producing nitrogen terminated surfaces under certain growth conditions. Chemical-mechanical polishing of these surfaces with colloidal silica

  12. III-V/Ge MOS device technologies for low power integrated systems

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

    2016-11-01

    CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

  13. Electronic structure of and quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach

    NASA Astrophysics Data System (ADS)

    Viswanatha, Ranjani; Sapra, Sameer; Saha-Dasgupta, Tanusri; Sarma, D. D.

    2005-07-01

    We analyze the electronic structure of group III-V semiconductors obtained within full potential linearized augmented plane wave (FP-LAPW) method and arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that the cation sp3 - anion sp3d5 basis along with the next nearest neighbor model for hopping interactions is sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital, employed previously. Similar analyses were also performed for the II-VI semiconductors, using the more accurate FP-LAPW method compared to previous approaches, in order to enhance reliability of the parameter values. Using these parameters, we calculate the electronic structure of III-V and II-VI nanocrystals in real space with sizes ranging up to about 7nm in diameter, establishing a quantitatively accurate description of the bandgap variation with sizes for the various nanocrystals by comparing with available experimental results from the literature.

  14. Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells

    SciTech Connect

    Tamboli, Adele C.; Essig, Stephanie; Horowitz, Kelsey A. W.; Woodhouse, Michael; van Hest, Maikel F. A. M.; Norman, Andrew G.; Steiner, Myles A.; Stradins, Paul

    2015-06-14

    Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted, bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.

  15. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    SciTech Connect

    Tamboli, Adele C. Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul; Perl, Emmett E.

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  16. Silicon MCM substrates for integration of III-V photonic devices and CMOS IC`s

    SciTech Connect

    Seigal, P.; Carson, R.; Flores, R.; Rose, B.

    1993-07-01

    The progress made in advanced packaging development at Sandia National Laboratories for integration of III-V photonic devices and CMOS IC`s on Silicon MCM substrates for planar aid stacked applications will be reported. Studies to characterize precision alignment techniques using solder attach materials compatible with both silicon IC`s and III-V devices will be discussed. Examples of the use of back-side alignment and IR through-wafer inspection will be shown along with the extra processing steps that are used. Under bump metallurgy considerations are also addressed.

  17. III-V/silicon germanium tandem solar cells on silicon substrates

    NASA Astrophysics Data System (ADS)

    Schmieder, Kenneth J.

    The development of a cost-effective high voltage tandem solar cell that can be grown directly on a silicon (Si) platform can lead to a 34% increase in efficiency over the present best monocrystalline Si laboratory device. III-V devices are known to yield some of the highest efficiencies in photovoltaics, but the high cost of lattice matched substrates and metal organic chemical vapor deposition (MOCVD) and device development make them prohibitively expensive in many markets. By utilizing silicon substrates and limiting the thickness of the III-V MOCVD material growth, this cost can be reduced. The leveraging technology of this initiative is a metamorphic silicon:germanium (SiGe) buffer between the silicon substrate and the active device layers. As developed by AmberWave Inc., it provides a low-dislocation interface for III-V nucleation and a high quality bottom cell grown by reduced pressure chemical vapor deposition (RPCVD). This research first reports on the theoretical limits of a III-V/SiGe tandem solar cell. Results will evaluate multiple III-V materials for the determination of optimal material composition to be lattice-matched with SiGe. Following this, a more complex device simulation, incorporating all major loss mechanisms, is accomplished in order to predict ideal efficiency targets and evaluate present experimental structures. Results demonstrate a robust model capable of simulating a wide range of binary and ternary III-V devices. Predictions show the capability of a tandem device operating at 32.5% 1-sun efficiency without requiring TDD improvement beyond that of the present SiGe layers. Following simulations, experimental III-V structures are grown via MOCVD and characterized, indicating successful process development for growth of III-V materials on the SiGe platform. This growth is then validated via the design and development of experimental solar device structures. Each iteration, beginning with the single-junction windowless GaAsP solar cell and

  18. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    NASA Astrophysics Data System (ADS)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  19. Low-index nanopatterned barrier for hybrid oxide-free III-V silicon conductive bonding.

    PubMed

    Bougot-Robin, Kristelle; Talneau, Anne; Benisty, Henri

    2014-09-22

    Oxide-free bonding of a III-V active stack emitting at 1300-1600 nm to a silicon-on-insulator wafer offers the capability to electrically inject lasers from the silicon side. However, a typical 500-nm-thick silicon layer notably attracts the fundamental guided mode of the silicon + III-V stack, a detrimental feature compared to established III-V Separate-Confinement Heterostructure (SCH) stacks. We experimentally probe with photoluminescence as an internal light source the guiding behavior for oxide-free bonding to a nanopatterned silicon wafer that acts as a low-index barrier. We use a sub-wavelength square array of small holes as an effective "low-index silicon" medium. It is weakly modulated along one dimension (superperiodic array) to outcouple the resulting guided modes to free space, where we use an angle-resolved spectroscopy study. Analysis of experimental branches confirms the capability to operate with a fundamental mode well localized in the III-V heterostructures.

  20. Nuclear conversion theory: molecular hydrogen in non-magnetic insulators

    PubMed Central

    Ghiglieno, Filippo

    2016-01-01

    The hydrogen conversion patterns on non-magnetic solids sensitively depend upon the degree of singlet/triplet mixing in the intermediates of the catalytic reaction. Three main ‘symmetry-breaking’ interactions are brought together. In a typical channel, the electron spin–orbit (SO) couplings introduce some magnetic excitations in the non-magnetic solid ground state. The electron spin is exchanged with a molecular one by the electric molecule–solid electron repulsion, mixing the bonding and antibonding states and affecting the molecule rotation. Finally, the magnetic hyperfine contact transfers the electron spin angular momentum to the nuclei. Two families of channels are considered and a simple criterion based on the SO coupling strength is proposed to select the most efficient one. The denoted ‘electronic’ conversion path involves an emission of excitons that propagate and disintegrate in the bulk. In the other denoted ‘nuclear’, the excited electron states are transients of a loop, and the electron system returns to its fundamental ground state. The described model enlarges previous studies by extending the electron basis to charge-transfer states and ‘continui’ of band states, and focuses on the broadening of the antibonding molecular excited state by the solid conduction band that provides efficient tunnelling paths for the hydrogen conversion. After working out the general conversion algebra, the conversion rates of hydrogen on insulating and semiconductor solids are related to a few molecule–solid parameters (gap width, ionization and affinity potentials) and compared with experimental measures. PMID:27703681

  1. Photo-induced Defects in Semiconductors

    NASA Astrophysics Data System (ADS)

    Redfield, David; Bube, Richard H.

    2006-03-01

    1. Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.

  2. Impact of photon recycling and luminescence coupling on III-V single and dual junction photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Walker, Alexandre W.; Höhn, Oliver; Micha, Daniel N.; Wagner, Lukas; Helmers, Henning; Bett, Andreas W.; Dimroth, Frank

    2015-01-01

    Modeling single junction solar cells composed of III-V semiconductors such as GaAs with the effects of photon recycling yields insight into design and material criteria required for high efficiencies. For a thin-film single junction GaAs cell to reach 28.5% efficiency, simulation results using a recently developed model which accounts for photon recycling indicate that Shockley-Read-Hall (SRH) lifetimes of electrons and holes must be longer than 3 and 1 μs, respectively, in a 2-μm thin active region, and that the native substrate must be removed such that the cell is coupled to a highly reflective rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's nonradiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14% to 33% experimentally, whereas the model requires increasing electron and hole SRH lifetimes to explain these results. This could be an indication of the saturating defects which mediate the SRH process. However, intermediate GaAs layers between the two subcells may also contribute to the luminescence coupling as a function of concentration.

  3. EUVE Observations of Nonmagnetic Cataclysmic Variables

    SciTech Connect

    Mauche, C W

    2001-09-05

    The authors summarize EUVE's contribution to the study of the boundary layer emission of high accretion-rate nonmagnetic cataclysmic variables, especially the dwarf novae SS Cyg, U Gem, VW Hyi, and OY Car in outburst. They discuss the optical and EUV light curves of dwarf nova outbursts, the quasi-coherent oscillations of the EUV flux of SS Cyg, the EUV spectra of dwarf novae, and the future of EUV observations of cataclysmic variables.

  4. Intrinsic spin dynamics in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Valín-Rodríguez, Manuel

    2005-12-01

    We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an 8 × 8 k·p Hamiltonian we treat systems based on different III-V semiconductor materials. It is shown that, even in the absence of an applied magnetic field, these systems show intrinsic spin dynamics governed by intraband and interband transitions leading to characteristic spin frequencies ranging from THz to optical frequencies.

  5. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  6. Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators

    NASA Astrophysics Data System (ADS)

    Zhang, Yan; Fischetti, M. V.; Sorée, B.; O'Regan, T.

    2010-12-01

    We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In1-xGaxAs) p-channel inversion layers with both SiO2 and high-κ insulators. The valence (sub)band structure of Ge and III-V channels, relaxed and under biaxial strain (tensile and compressive) is calculated using an efficient self-consistent method based on the six-band k ṡp perturbation theory. The hole mobility is then computed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering (III-Vs only), alloy scattering (alloys only) and remote phonon scattering, accounting for multisubband dielectric screening. As expected, we find that Ge and III-V semiconductors exhibit a mobility significantly larger than the "universal" Si mobility. This is true for MOS systems with either SiO2 or high-κ insulators, although the latter ones are found to degrade the hole mobility compared to SiO2 due to scattering with interfacial optical phonons. In addition, III-Vs are more sensitive to the interfacial optical phonons than Ge due to the existence of the substrate polar phonons. Strain—especially biaxial tensile stress for Ge and biaxial compressive stress for III-Vs (except for GaAs)—is found to have a significant beneficial effect with both SiO2 and HfO2. Among strained p-channels, InSb exhibits the largest mobility enhancement. In0.7Ga0.3As also exhibits an increased hole mobility compared to Si, although the enhancement is not as large. Finally, our theoretical results are favorably compared with available experimental data for a relaxed Ge p-channel with a HfO2 insulator.

  7. Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

    PubMed

    Kazior, Thomas E

    2014-03-28

    Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

  8. MBE growth technology for high quality strained III-V layers

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

    1992-01-01

    III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

  9. Nucleation and initial radius of self-catalyzed III-V nanowires

    NASA Astrophysics Data System (ADS)

    Dubrovskii, V. G.; Borie, S.; Dagnet, T.; Reynes, L.; André, Y.; Gil, E.

    2017-02-01

    We treat theoretically the initial nucleation step of self-catalyzed III-V nanowires under simultaneously deposited group III and V vapor fluxes and with surface diffusion of a group III element. Our model is capable of describing the droplet size at which the very first nanowire monolayer nucleates depending on the element fluxes and surface temperature. This size determines the initial nanowire radius in growth techniques without pre-deposition of gallium. We show that useful self-catalyzed III-V nanowires can form only under the appropriately balanced V/III flux ratios and temperatures. Such balance is required to obtain nucleation from reasonably sized droplets that are neither too small under excessive arsenic flux nor too large in the arsenic-poor conditions.

  10. The Physics of III-V Heterojunction Devices in Wireless Communications

    NASA Astrophysics Data System (ADS)

    Johnson, Karl

    2003-03-01

    III-V heterojunction devices have become pervasive in wireless communication appliances. In particular, the low voltage, high efficiency power amplifier transmitters in cellular phones are dominated by heterojunction bipolar transistors (HBT), psuedomorphic high electron mobility transistors (pHEMT) and heterojunction field effect transistors (HFET). Further, these III-V heterojunction devices are also appearing in infrastructure applications such as cellular base stations, wireless local area network (WLAN) and cable television (CATV) line amplifiers. The design of these devices requires unique band gap engineering in order to meet the cost, performance and ruggedness in the linear and saturated power modes required by today's cellular modulation protocols. This presentation will address the physics behind the design, development and operation of these technologies leading to their optimization for the wireless market place.

  11. MOCVD Growth of III-V Photodetectors and Light Emitters for Integration of Optoelectronic Devices on Si substrates

    NASA Astrophysics Data System (ADS)

    Geng, Yu

    With the increase of clock speed and wiring density in integrated circuits, inter-chip and intra-chip interconnects through conventional electrical wires encounter increasing difficulties because of the large power loss and bandwidth limitation. Optical interconnects have been proposed as an alternative to copper-based interconnects and are under intense study due to their large data capacity, high data quality and low power consumption. III-V compound semiconductors offer high intrinsic electron mobility, small effective electron mass and direct bandgap, which make this material system advantageous for high-speed optoelectronic devices. The integration of III-V optoelectronic devices on Si substrates will provide the combined advantage of a high level of integration and large volume production of Si-based electronic circuitry with the superior electrical and optical performance of III-V components, paving the way to a new generation of hybrid integrated circuits. In this thesis, the direct heteroepitaxy of photodetectors (PDs) and light emitters using metal-organic chemical vapor deposition for the integration of photonic devices on Si substrates were studied. First we studied the selective-area growth of InP/GaAs on patterned Si substrates for PDs. To overcome the loading effect, a multi-temperature composite growth technique for GaAs was developed. By decreasing various defects such as dislocations and anti-phase domains, the GaAs and InP buffer layers are with good crystalline quality and the PDs show high speed and low dark current performance both at the edge and center of the large growth well. Then the growth and fabrication of GaAs/AlGaAs QW lasers were studied. Ellipsometry was used to calibrate the Al composition of AlGaAs. Thick p and n type AlGaAs with a mirrorlike surface were grown by high V/III ratio and high temperature. The GaAs/AlGaAs broad area QW laser was successfully grown and fabricated on GaAs substrate and showed a pulsed lasing result

  12. To the understanding of the formation of the droplet-epitaxial III-V based nanostructures

    SciTech Connect

    Nemcsics, Ákos

    2014-05-15

    In this work, we discuss the evolution of the self-assembling III-V based nanostructures. These nano-structures were prepared by droplet epitaxial technique. The different nanostructures such as quantum dot, quantum ring, double quantum ring, or nanohole form similarly from an initial Ga droplet but under different substrate temperature and various arsenic pressures. Started from few atomic courses, we give here a qualitative description of the key processes for all of the aforementioned nanostructures.

  13. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  14. Graded core/shell semiconductor nanorods and nanorod barcodes

    SciTech Connect

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  15. Understanding Self-Catalyzed Epitaxial Growth of III-V Nanowires toward Controlled Synthesis.

    PubMed

    Zi, Yunlong; Suslov, Sergey; Yang, Chen

    2017-02-08

    The self-catalyzed growth of III-V nanowires has drawn plenty of attention due to the potential of integration in current Si-based technologies. The homoparticle-assisted vapor-liquid-solid growth mechanism has been demonstrated for self-catalyzed III-V nanowire growth. However, the understandings of the preferred growth sites of these nanowires are still limited, which obstructs the controlled synthesis and the applications of self-catalyzed nanowire arrays. Here, we experimentally demonstrated that thermally created pits could serve as the preferred sites for self-catalyzed InAs nanowire growth. On that basis, we performed a pregrowth annealing strategy to promote the nanowire density by enhancing the pits formation on the substrate surface and enable the nanowire growth on the substrate that was not capable to facilitate the growth. The discovery of the preferred self-catalyzed nanowire growth sites and the pregrowth annealing strategy have shown great potentials for controlled self-catalyzed III-V nanowire array growth with preferred locations and density.

  16. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

    NASA Astrophysics Data System (ADS)

    Kunert, B.; Guo, W.; Mols, Y.; Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K.

    2016-08-01

    We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

  17. High mobility CMOS technologies using III-V/Ge channels on Si platform

    NASA Astrophysics Data System (ADS)

    Takagi, S.; Kim, S.-H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; Yamada, H.; Ichikawa, O.; Fukuhara, N.; Hata, M.; Takenaka, M.

    2013-10-01

    MOSFETs using channel materials with high mobility and low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to Ge and III-V channels. In this paper, possible solutions for realizing III-V/Ge MOSFETs on the Si platform are presented. The high quality III-V channel formation on Si substrates can be realized through direct wafer bonding. The gate stack formation is constructed on a basis of atomic layer deposition (ALD) Al2O3 gate insulators for both InGaAs and Ge MOSFETs. As the source/drain (S/D) formation, Ni-based metal S/D is implemented for both InGaAs and Ge MOSFETs. By combining these technologies, we demonstrate successful integration of InGaAs-OI nMOSFETs and Ge p-MOSFETs on a same wafer and their superior device performance.

  18. Fatigue failure of concentrator III-V solar cells - Does forward bias current injection really kill III-V CPV cells?

    NASA Astrophysics Data System (ADS)

    Araki, Kenji; Nagai, Hirokazu; Tamura, Kazuyuki

    2012-10-01

    CPV cells are successively exposed by cycles of concentrated sunlight and huge cycling current flows out of contacts. The purpose of this research is to identify if the fatigue will be one of the life-end and wearing modes of CPV cells and how long the life-time will be. One of the best ways of giving cycling stress on cells and contacts is cycling forward bias injection. First, it is important to investigate if forward bias itself damages concentrator III-V cells. To confirm the forward bias current itself does not damage the CPV solar cells but cycling does, we applied 4 times of Isc continuously in 500 hours, equivalently total injection of 90,000 cycles, but no damage or degradation was observed. What's more, we applied the cycling test after the stress of 500 hour continuous forward bias injection. We did not identify any changes between groups of with stress of continuous forward bias and without them. On-Off tests giving forward bias current as high as 4 times of Isc are conducted. The failure was analyzed by the Weible function. About 2,000 cells in total were examined. A small number of initial failure, that of failure number of cycles lied along exponential distribution and distinct portion of wear mode failure that of failure number of cycles lied along Gaussian distribution were identified. The EL measurement indicated that all the damaged cells in wear mode were local shunt under the top contacts suggesting stress under the top contacts would be possibly responsible to the fatigue failure. Advanced contact design that leads to reduce the stress on the top contact is expected to prolong the lifetime of the III-V concentrator cells.

  19. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P.

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  20. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992

    SciTech Connect

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P.

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell`s efficiency less dependent on materialquality.

  1. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    SciTech Connect

    Lu, Hong; Burke, Peter G.; Gossard, Arthur C.; Zeng, Gehong; Ramu, Ashok T.; Bahk, Je-Hyeong; Bowers, John E.

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  2. Semimetal/semiconductor nanocomposites for thermoelectrics.

    PubMed

    Lu, Hong; Burke, Peter G; Gossard, Arthur C; Zeng, Gehong; Ramu, Ashok T; Bahk, Je-Hyeong; Bowers, John E

    2011-05-24

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:In(x)Ga(1−x)Sb as a promising p-type thermoelectric material. Nanostructures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By co-doping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μ m thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  3. Stable surface passivation process for compound semiconductors

    DOEpatents

    Ashby, Carol I. H.

    2001-01-01

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  4. Economic competitiveness of III-V on silicon tandem one-sun photovoltaic solar modules in favorable future scenarios: Economic competitiveness of III-V on on silicon tandem modules

    SciTech Connect

    Bobela, David C.; Gedvilas, Lynn; Woodhouse, Michael; Horowitz, Kelsey A. W.; Basore, Paul A.

    2016-09-05

    Tandem modules combining a III-V top cell with a Si bottom cell offer the potential to increase the solar energy conversion efficiency of one-sun photovoltaic modules beyond 25%, while fully utilizing the global investment that has been made in Si photovoltaics manufacturing. At present, the cost of III-V cells is far too high for this approach to be competitive for one-sun terrestrial power applications. We investigated the system-level economic benefits of both GaAs/Si and InGaP/Si tandem modules in favorable future scenarios where the cost of III-V cells is substantially reduced, perhaps to less than the cost of Si cells. We found, somewhat unexpectedly, that these tandems can reduce installed system cost only when the area-related balance-of-system cost is high, such as for area-constrained residential rooftop systems in the USA. When area-related balance-of-system cost is lower, such as for utility-scale systems, the tandem module offers no benefit. This is because a system using tandem modules is more expensive than one using single-junction Si modules when III-V cells are expensive, and a system using tandem modules is more expensive than one using single-junction III-V modules when III-V cells are inexpensive.

  5. General theory of the transverse dielectric constant of III-V semiconducting compounds

    NASA Technical Reports Server (NTRS)

    Kahen, K. B.; Leburton, J. P.

    1985-01-01

    A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

  6. Integrated Optical Pumping of Cr & Ti-Doped Sapphire Substrates With III-V Nitride Materials

    DTIC Science & Technology

    2005-08-24

    the Cr in sapphire could also permit the construction of white light LEDs . Ultimately, an integrated III-V Nitride optical pump for Ti:Sapphire could...substrates by MOCVD. 2. Characterization of doped sapphire/ InGaN structures byPL to simulate electrical injection by laser or LED device structures Part 2 1...Cr:sapphire substrate. Solid line is the spectrum of blue and red light emitted by InGaN LED epitaxially grown on Cr:sapphire substrate. The light was collected

  7. Solid-state lighting : the III-V Epi Killer App.

    SciTech Connect

    Tsao, Jeffrey Yeenien

    2010-06-01

    Throughout its history, lighting technology has made tremendous progress: the efficiency with which power is converted into usable light has increased 2.8 orders of magnitude over three centuries. This progress has, in turn, fueled large increases in the consumption of light and productivity of human society. In this talk, we review an emerging new technology, solid-state lighting: its frontier performance potential; the underlying advances in physics and materials that might enable this performance potential; the resulting energy consumption and human productivity benefits; and the impact on worldwide III-V epi manufacture.

  8. Techno-economic analysis of three different substrate removal and reuse strategies for III-V solar cells: Techno-economic analysis for III-V solar cells

    SciTech Connect

    Ward, J. Scott; Remo, Timothy; Horowitz, Kelsey; Woodhouse, Michael; Sopori, Bhushan; VanSant, Kaitlyn; Basore, Paul

    2016-05-10

    The high cost of wafers suitable for epitaxial deposition of III-V solar cells has been a primary barrier to widespread use of these cells in low-concentration and one-sun terrestrial solar applications. A possible solution is to reuse the substrate many times, thus spreading its cost across many cells. We performed a bottom-up techno-economic analysis of three different strategies for substrate reuse in high-volume manufacturing: epitaxial lift-off, spalling, and the use of a porous germanium release layer. The analysis shows that the potential cost reduction resulting from substrate reuse is limited in all three strategies--not by the number of reuse cycles achievable, but by the costs that are incurred in each cycle to prepare the substrate for another epitaxial deposition. The dominant substrate-preparation cost component is different for each of the three strategies, and the cost-ranking of these strategies is subject to change if future developments substantially reduce the cost of epitaxial deposition.

  9. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides

    DTIC Science & Technology

    1992-05-01

    lateral direction. guide layer. The effect of the optical waveguide is shown by the The laser fabrication begins with the deposition on the near-field...to manipulate photons around a "chip," e.g., The laser fabrication begins with the patterning of for optoelectronic integrated circuits (OEICs), a

  10. A study of capping layers for sulfur monolayer doping on III-V junctions

    NASA Astrophysics Data System (ADS)

    Yum, J. H.; Shin, H. S.; Hill, R.; Oh, J.; Lee, H. D.; Mushinski, Ryan M.; Hudnall, Todd W.; Bielawski, C. W.; Banerjee, S. K.; Loh, W. Y.; Wang, Wei-E.; Kirsch, Paul

    2012-12-01

    Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 Ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.

  11. III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse.

    PubMed

    Liu, Wenyong; Lee, Jong-Soo; Talapin, Dmitri V

    2013-01-30

    In this work, we synthesized InP and InAs nanocrystals (NCs) capped with different inorganic ligands, including various molecular metal chalcogenide complexes (MCCs) and chalcogenide ions. We found that MCCs and chalcogenide ions can quantitatively displace organic ligands from the surface of III-V NCs and serve as the inorganic capping groups for III-V NC surfaces. These inorganic ligands stabilize colloidal solutions of InP and InAs NCs in polar solvents and greatly facilitate charge transport between individual NCs. Charge transport studies revealed high electron mobility in the films of MCC-capped InP and InAs NCs. For example, we found that bridging InAs NCs with Cu(7)S(4)(-) MCC ligands can lead to very high electron mobility exceeding 15 cm(2)/(V s). In addition, we observed unprecedented ambipolar (positive/negative) photoresponse of MCC-capped InAs NC solids that changed sign depending on the ligand chemistry, illumination wavelength, and doping of the NC solid. For example, the sign of photoconductance of InAs NCs capped with Cu(7)S(4)(-) or Sn(2)S(6)(4-) ions converted from positive at 0.80 and 0.95 eV to negative at 1.27 and 1.91 eV. We propose an explanation of this unusually complex photoconductivity of InAs NC solids.

  12. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Recombination-induced motion of dislocations in III-V compounds

    NASA Astrophysics Data System (ADS)

    Schreiber, J.; Leipner, H. S.

    1988-11-01

    The methods of in situ cathodoluminescence and scanning electron microscopy were used in a study of stimulated dislocation glide. Dislocations generated by deliberate surface damage were found to be highly mobile when excited above a certain threshold. A study was made of the dependence of the glide velocity on the excitation rate and the first quantitative results on low-temperature dislocation motion are reported.

  13. Low Temperature Photoluminescence Study of Uranium Implanted Into III-V Semiconductors and A1GaAs

    DTIC Science & Technology

    1989-12-04

    U4 + has been assigned as 3H4 with a configuration of 5f 2 . (9) Additional work was also done with neptunium , plutonium, americium, curium, and... neptunium , plutonium, and americium may be studied in semicon- ductors. I I I I I I I 52 I U _ _ _ _ _ _ _ _ _ _ _ _ I I BibliographyI 3 1. Colon, Capt J. E

  14. Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition

    DTIC Science & Technology

    1989-01-31

    M. Bedair, Appi. Phys. Lett. 49, 1199 (1986). 18 N. Kabayashi, T. Makimoto , and Y. Horikoshi, Jap. J. Appi. Phys. 24, L962 (1985). 19 M, Yoshida. H...Kobayashi, T. Makimoto , and Y. Horikoshi, Appl. Phys. Lett, 50, 1435 (1987). 25 R. Bhat, J. R. Hayes, E. Colas, and R. Esagui, IEEE Electron Device...445-500’C), where the QWs were grown by the pulsed gas injection method. 137 Al0.5 Go 0 .5 As 960 ~ /V/ 480A / //,////504 90 A Substrat Figure 5.3 5

  15. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report

    SciTech Connect

    Watson, G.P.; Matragrano, M.

    1995-03-01

    This report discusses the following topics: strained layer defects; the structural and electronic characteristics of misfit dislocations; requirements for the growth of high quality, low defect density InGaAs strained epitaxial layers; the isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs; the effect of pattern substrate trench depth on misfit dislocation density; the thermal stability of lattice mismatched InGaAs grown on patterned GaAs; misfit dislocations in ZnSe strained epitaxial layers grown on patterned GaAs; and the measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates.

  16. Luminescence of Lanthanides and Actinides Implanted into Binary III-V semiconductors and AlGaAs

    DTIC Science & Technology

    1989-12-01

    elements with atomic num1 oers 90 to 103, inclusively, beginning with thorium (90) 15 and through lawrencium (103). Tht electron configuration for both... Lawrencium Lr 5f14(lSo)V Footnote. Electrons added to the Radon core, namely to 1s22622p63s23p 6 3dlO4s 2 4p64dlO4f 145s25p 6 5dlO6s 2 6p6 Jj: case of Jj

  17. Ion Implantation and Laser Processing of III-V Compound Semiconductors with Applications to the Fabrication of Microwave Devices

    DTIC Science & Technology

    1981-10-01

    removed in boiling HCl and surface electrical measurements were carried out using a van der Pauw technique. Complete activation of the implanted dopants...mobilities obtained by the differen- tial Van der Pauw measurements, along with the Sze and Irvin mobility corresponding to the measured carrier con...M m) ble to the electrically active concentration of Sn. We can see FIG. I. Van der Pauw stripping and SIMS profile for a sample ramped to that

  18. A simple and reliable method of thermoelectic effect spectroscopy for semi-insulating III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Z. C.; Xie, K.; Wie, C. R.

    1991-08-01

    We have developed a simpler and more reliable method of thermoelectric effect spectroscopy (TEES), eliminating the second heater in the technique. We have applied this method to the deep level studies in the semi-insulating undoped or Cr-doped GaAs materials and in the GaAs epitaxial layers grown at a low temperature by molecular beam epitaxy. We have found that the electrical contacts made on front and back surfaces of the sample are more reliable for the TEES measurement than both contacts made on the same surface. In this contact arrangement, the temperature difference of about 1-2 K between the back and front surfaces is enough to produce a clear and reliable TEES data, without the need for a second heater. The results obtained by TEES are consistent with the results obtained by photoinduced transient spectroscopy (PITS) and by thermally stimulated current (TSC) measurements. The TEES results clearly distinguish between the electron traps and the hole traps. We discuss the results on the various semi-insulating GaAs samples and the advantages and limitations of the TEES technique.

  19. Studies of Growth-In Defects and Transport Properties Versus Growth Parameters in III-V Compound Semiconductors.

    DTIC Science & Technology

    1982-06-10

    calls [1-51. For example, a cas- cade p-n junction solar cell structure with open circuit 273 I-$5iS/I2/11024VI] 0UM 0 I" AIME t 73 - *tj--e --.- I I f...electrical properties of the grown-in defects and their correlation to the performance character- istics of the AlxGalxAs/GaAs cascade solar cells . To achieve...as a window layer in the solar cell ’structure, and is much more heavily doped (S5xlO 18 cm- 3) than the undoped n-AlO. 3GaO.7As and n-GaAs LPE layers

  20. [Structure and electronic properties of defects at nonlattice matched III-V semiconductor interfaces]. Progress report, 1989--90

    SciTech Connect

    Ast, D.G.

    1990-12-31

    Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The research program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.

  1. Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Wolf, D.; Lichte, H.; Pozzi, G.; Prete, P.; Lovergine, N.

    2011-06-01

    Electron holographic tomography (EHT), the combination of off-axis electron holography with electron tomography, is a technique, which can be applied to the quantitative 3-dimensional (3D) mapping of electrostatic potential at the nanoscale. Here, we show the results obtained in the EHT investigation of GaAs and GaAs-AlGaAs core-shell nanowires grown by Au-catalysed metalorganic vapor phase epitaxy. The unique ability of EHT of disentangling the materials mean inner potential (MIP) from the specimen projected thickness allows reconstruction of the nanowire 3D morphology and inner compositional structure as well as the measurement of the MIP.

  2. Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires

    SciTech Connect

    Wolf, D.; Lichte, H.; Pozzi, G.; Lovergine, N.

    2011-06-27

    Electron holographic tomography (EHT), the combination of off-axis electron holography with electron tomography, is a technique, which can be applied to the quantitative 3-dimensional (3D) mapping of electrostatic potential at the nanoscale. Here, we show the results obtained in the EHT investigation of GaAs and GaAs-AlGaAs core-shell nanowires grown by Au-catalysed metalorganic vapor phase epitaxy. The unique ability of EHT of disentangling the materials mean inner potential (MIP) from the specimen projected thickness allows reconstruction of the nanowire 3D morphology and inner compositional structure as well as the measurement of the MIP.

  3. Effect of low temperature anneals and nonthermal treatments on the properties of gap fill oxides used in SiGe and III-V devices

    NASA Astrophysics Data System (ADS)

    Ryan, E. Todd; Morin, Pierre; Madan, Anita; Mehta, Sanjay

    2016-07-01

    Silicon dioxide is used to electrically isolate CMOS devices such as fin field effect transistors by filling gaps between the devices (also known as shallow trench isolation). The gap fill oxide typically requires a high temperature anneal in excess of 1000 °C to achieve adequate electrical properties and oxide densification to make the oxide compatible with subsequent fabrication steps such as fin reveal etch. However, the transition from Si-based devices to high mobility channel materials such as SiGe and III-V semiconductors imposes more severe thermal limitations on the processes used for device fabrication, including gap fill oxide annealing. This study provides a framework to quantify and model the effect of anneal temperature and time on the densification of a flowable silicon dioxide as measured by wet etch rate. The experimental wet etch rates allowed the determination of the activation energy and anneal time dependence for oxide densification. Dopant and self-diffusion can degrade the channel material above a critical temperature. We present a model of self-diffusion of Ge and Si in SiGe materials. Together these data allowed us to map the thermal process space for acceptable oxide wet etch rate and self-diffusion. The methodology is also applicable to III-V devices, which require even lower thermal budget. The results highlight the need for nonthermal oxide densification methods such as ultraviolet (UV) and plasma treatments. We demonstrate that several plasma treatments, in place of high temperature annealing, improved the properties of flowable oxide. In addition, UV curing prior to thermal annealing enables acceptable densification with dramatically reduced anneal temperature.

  4. Progressive materials integration: III-V on insulator by wafer bonding

    NASA Astrophysics Data System (ADS)

    Hayashi, Sumiko Lynn

    The development of wafer bonded III-V on insulator structures aims to provide advancements in high-speed electronic applications such as High Electron Mobility Transistors. This study demonstrates the feasibility of hydrogen exfoliated template layers for the growth III-V based device structures. InP layers are transferred to GaAs substrates to assess the suitability of the InP layer as a template for metal-organic vapor phase epitaxial growth. Strong, large area bonds between III-V wafers are achieved using SiN intermediate layers, which provide robust structures at high temperatures. The bonding mechanisms of SiN layers with a short oxygen plasma exposure are found to mimic those of SiO2. These bonds are strong enough to withstand thermal strain imposed by bonded wafers that exhibit appreciable coefficient of thermal expansion mismatch, such as InP and GaAs. These bonded wafers exhibit some stability against defect formation for low thermal strains. However, depending upon the thermal expansion coefficient mismatch and required thermal processing, misfit dislocations can form to relieve this thermal strain. Careful control of both template thickness and annealing temperatures leads to a stable template for subsequent epitaxial growth. Once bonding is complete, the template layer is separated from the bulk by a technique of hydrogen ion implantation and exfoliation. The layer exfoliation from a hydrogen implanted InP substrate is facilitated by the formation of extended defects in a certain temperature regime due to hydrogen trapping. Subsequently increasing the temperature produces rapid planar exfoliation. This two-step annealing scheme simultaneously allows the wafer bond to strengthen during the low temperature defect nucleation phase. After exfoliation, the surface of the template layer is generally very rough, therefore a chemical mechanical polishing step was developed to planarize this layer for subsequent epitaxial growth. Damage-free planarization of the

  5. Modeling of High-Frequency Noise in III-V Double-Gate HFETs

    NASA Astrophysics Data System (ADS)

    Vasallo, B. G.

    2009-04-01

    In this paper, we present a review of recent results on Monte Carlo modeling of high-frequency noise in III-V four-terminal devices. In particular, a study of the noise behavior of InAlAs/InGaAs Double-Gate High Electron Mobility Transistors (DG-HEMTs), operating in common mode, and Velocity Modulation Transistors (VMT), operating in differential mode, has been performed taking as a reference a similar standard HEMT. In the DG-HEMT, the intrinsic P, R and C parameters show a modest improvement, but the extrinsic minimum noise figure NFmin reveals a significantly better extrinsic noise performance due to the lower resistances of the gate contact and the source and drain accesses. In the VMT, very high values of P are obtained since the transconductance is very small, while the differential-mode operation leads to extremely low values of R.

  6. Method for preparing homogeneous single crystal ternary III-V alloys

    DOEpatents

    Ciszek, Theodore F.

    1991-01-01

    A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.

  7. Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

    PubMed

    Shao, Haifeng; Keyvaninia, Shahram; Vanwolleghem, Mathias; Ducournau, Guillaume; Jiang, Xiaoqing; Morthier, Geert; Lampin, Jean-Francois; Roelkens, Gunther

    2014-11-15

    We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.

  8. Effective electron mass in quantum wires of III-V, ternary and quaternary materials.

    PubMed

    Paitya, N; Ghatak, K P

    2012-12-01

    In this paper, an attempt is made to study the effective electron mass (EEM) in Quantum wires (QWs) of III-V, ternary and quaternary materials on the basis of three and two band models of Kane within the framework of k x p formalism. It has been found, taking QWs of InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(t) that the 1D EEM increases with electron concentration per unit length and decreases with increasing film thickness respectively. For ternary and quaternary materials the EEM increases with increase in alloy composition. Under certain special conditions all the results for all the 1-D materials get simplified into the well known parabolic energy bands and thus confirming the compatibility test. The results of this paper find two applications in the fields of nanoscience and technology.

  9. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  10. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  11. Dynamics of Wet Oxidation of High-AL-Content III-V Materials

    SciTech Connect

    Ashby, C.I.H.

    1999-01-27

    Oxidation of layers of high-Al-content III-V materials by water vapor has become the enabling process for high-efficiency vertical cavity surface emitting lasers (VCSELS) and has potential applications for reducing substrate current leakage in GaAs-on-insulator (GOI) MESFETS. Because of the established importance of wet oxidation in optoelectronic devices and its potential applications in electronic devices, it has become increasingly important to understand the mechanism of wet oxidation and how it might be expected to affect both the fabrication and subsequent operation of devices that have been made using this technique. The mechanism of wet oxidation and the consequence of this mechanism for heterostructure design and ultimate device operation are discussed here.

  12. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

    NASA Astrophysics Data System (ADS)

    Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

    2016-02-01

    In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

  13. Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fitzgerald, Eugene A.; Ringel, Steven A.

    2005-01-01

    A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

  14. Epitaxial growth of III-V nitrides and phase separation and ordering in indium gallium nitride alloys

    NASA Astrophysics Data System (ADS)

    Doppalapudi, Dharanipal

    The family of III-V nitrides are wide band-gap semiconductors with a broad range of opto-electronic applications in LEDs, laser diodes, UV detectors as well as high temperature/high frequency devices. Due to the lack of good quality native substrates, GaN is grown on foreign substrates that have a lattice and thermal mismatch with GaN. This results in a material with a high density of defects, which in turn adversely affects the opto-electronic properties of the epilayer. In this study, GaN films were epitaxially grown on various substrates (C-plane sapphire, A-plane sapphire, SiC and ZnO) by molecular beam epitaxy. Additionally, GaN homoepitaxy onto laterally overgrown thick GaN substrates was investigated. It was demonstrated that the polarity of the GaN film plays a major role in determining the properties of the films. The growth parameters were optimized to eliminate inversion domain boundaries, which result in domains of opposite polarity in the GaN lattice. For growth on A-plane sapphire, it was found that substrate nitridation and low temperature buffer deposition are critical in order to obtain good epitaxial growth, in spite of the relatively small mismatch between the film and substrate. A crystallographic model was developed to explain this observation. By optimizing growth parameters, GaN films with excellent structural, transport, optical and device properties were grown. The second part of this research involves growth of ternary alloys and superlattice structures, which are essential in the fabrication of many devices. It was found that the InN-GaN pseudo-binary system is not homogeneous over the entire composition range. Due to the mismatch between the tetrahedral radii of GaN and InN, InGaN alloys exhibited phase separation and long-range atomic ordering. Investigations of InxGa1-xN films grown over a wide range of compositions by XRD and TEM showed that the predominant strain relieving mechanism was phase separation in films with x > 0.2, and

  15. Silicon/III-V laser with super-compact diffraction grating for WDM applications in electronic-photonic integrated circuits.

    PubMed

    Wang, Yadong; Wei, Yongqiang; Huang, Yingyan; Tu, Yongming; Ng, Doris; Lee, Cheewei; Zheng, Yunan; Liu, Boyang; Ho, Seng-Tiong

    2011-01-31

    We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). The SCG based Si/III-V laser is realized by fabricating the SCG on silicon-on-insulator (SOI) substrate. Optical gain is provided by electrically pumped heterogeneous integrated III-V material on silicon. Single-wavelength lasing at 1550 nm with an output power of over 2 mW and a lasing threshold of around 150 mA were achieved.

  16. Nonmagnetic metamaterial landscapes for guided electromagnetic waves

    NASA Astrophysics Data System (ADS)

    Viaene, S.; Ginis, V.; Danckaert, J.; Tassin, P.

    2016-09-01

    Transformation optics provides a geometry-based tool to create new components taking advantage of artificial metamaterials with optical properties that are not available in nature. Unfortunately, although guided electromagnetic waves are crucial for optical circuitry, transformation optics is not yet compatible with two-dimensional slab waveguides. Indeed, after determining the propagation of confined waves along the waveguide with a two-dimensional coordinate transformation, the conventional application of transformation optics results in metamaterials whose properties are insensitive to the coordinate perpendicular to the waveguide, leading to bulky, and therefore impractical, designs. In this contribution, we formulate an alternative framework that leads to feasible coordinate-based designs of two-dimensional waveguides. To this end, we characterize a guided transverse-magnetic light mode by relevant electromagnetic equations: a Helmholtz equation to account for wave propagation and a dispersion relation to impose a continuous light profile at the interface. By considering how two-dimensional conformal transformations transform these equations, we are able to materialize the coordinate-designed flows with a nonmagnetic metamaterial core of varying thickness, obtaining a two-dimensional device. We numerically demonstrate the effectiveness and versatility of our equivalence relations with three crucial functionalities, a beam bender, a beam splitter and a conformal lens, on a qualitative and quantitative level, by respectively comparing the electromagnetic fields inside and the transmission of our two-dimensional metamaterial devices to that of their three-dimensional counterparts at telecom wavelengths. As a result, we envision that one coordinate-based multifunctional waveguide component may seamlessly split and bend light beams on the landscape of an optical chip.

  17. Linking computational and experimental studies of III-V quantum dots for optoelectronics and photovoltaics

    NASA Astrophysics Data System (ADS)

    Semichaevsky, A. V.; Goldman, R. S.; Johnson, H. T.

    2011-09-01

    Low-dimensional semiconductors (LDS) are semiconductor structures such as quantum dots, quantum wires, and quantum wells in which electron and hole wave functions are confined due to heterogeneous composition and often strongly affected by mismatch strain. Due to the quantum confinement, LDS exhibit unusual electronic and optical properties not found in bulk semiconductor materials. Quantum dots (QD) have found new applications in various semiconductor devices such as lasers, photodetectors, and solar cells. Precise design of QD structures requires understanding of their chemical composition and nanomechanical properties, and relies on both experimental and computational approaches. In this paper we provide an overview of computational and experimental methods for characterization of QD heterostructures. In particular, we review our own concerted efforts to bring together computation and experiment in order to better explain their optoelectronic and photovoltaic properties.

  18. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    DOEpatents

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  19. The Dependence of Electrical Properties on Miscut Orientation in Direct Bonded III-V Solar Cell Layers

    NASA Astrophysics Data System (ADS)

    Seal, Mark

    interface morphology. No interfacial layer is present in InP//InP structures before or after rapid thermal processing. It is observed that regions adjacent to the interface undergo a process of atomic redistribution and recrystallize into the same lattice arrangement as the bulk semiconductor. GaAs//InP interfaces are observed to contain regions direct substrate contact with oxide inclusions in between after rapid thermal processing, consistent with previous work on GaAs//GaAs interfaces. It is concluded that for III-V direct wafer bonded heterostructures, interface conductivity is a function of both the relative misorientation between the (001) surfaces and the material pair. The significance of this study is that the additional variable of lattice mismatch does not degrade electrical conductivity through GaAs//InP interfaces. This is significant for applications where heterostructure interface conduction must be controlled, such as the direct bonding of III-V wafers for photovoltaic applications.

  20. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    SciTech Connect

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  1. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    NASA Astrophysics Data System (ADS)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  2. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    SciTech Connect

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M.; Ready, W. Jud

    2016-01-14

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  3. Proton irradiation effects on advanced digital and microwave III-V components

    SciTech Connect

    Hash, G.L.; Schwank, J.R.; Shaneyfelt, M.R.; Sandoval, C.E.; Connors, M.P.; Sheridan, T.J.; Sexton, F.W.; Slayton, E.M.; Heise, J.A.; Foster, C.

    1994-09-01

    A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].

  4. Reliability of III-V electronic devices -- the defects that cause the trouble

    NASA Astrophysics Data System (ADS)

    Pantelides, Sokrates T.

    2012-02-01

    Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies [1] in III-V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation). This work was done in collaboration with R.D. Schrimpf, D.M. Fleetwood, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, and B.R. Tuttle. Devices were provided by D.F. Brown, J. Speck and U. Mishra, and by J. Bergman and B. Brar. [4pt] [1] Y. S. Puzyrev et al., Appl. Phys. Lett. 96, 053505 (2010); T. Roy et al., Appl. Phys. Lett. 96, 133503 (2010); X. Shen et al., J. Appl. Phys. 108, 114505 (2010).

  5. Theoretical performance of multi-junction solar cells combining III-V and Si materials.

    PubMed

    Mathews, Ian; O'Mahony, Donagh; Corbett, Brian; Morrison, Alan P

    2012-09-10

    A route to improving the overall efficiency of multi-junction solar cells employing conventional III-V and Si photovoltaic junctions is presented here. A simulation model was developed to consider the performance of several multi-junction solar cell structures in various multi-terminal configurations. For series connected, 2-terminal triple-junction solar cells, incorporating an AlGaAs top junction, a GaAs middle junction and either a Si or InGaAs bottom junction, it was found that the configuration with a Si bottom junction yielded a marginally higher one sun efficiency of 41.5% versus 41.3% for an InGaAs bottom junction. A significant efficiency gain of 1.8% over the two-terminal device can be achieved by providing an additional terminal to the Si bottom junction in a 3-junction mechanically stacked configuration. It is shown that the optimum performance can be achieved by employing a four-junction series-connected mechanically stacked device incorporating a Si subcell between top AlGaAs/GaAs and bottom In0.53Ga0.47As cells.

  6. Analysis of III-V Superlattice nB n Device Characteristics

    NASA Astrophysics Data System (ADS)

    Rhiger, David R.; Smith, Edward P.; Kolasa, Borys P.; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.

    2016-09-01

    Mid-wavelength infrared nB n detectors built with III-V superlattice materials have been tested by means of both capacitance and direct-current methods. By combining the results, it is possible to achieve clear separation of the two components of dark current, namely the generation-recombination (GR) current due to the Shockley-Read-Hall mechanism in the depletion region, and the diffusion current from the neutral region. The GR current component is unambiguously identified by two characteristics: (a) it is a linear function of the depletion width, and (b) its activation energy is approximately one-half the bandgap. The remaining current is shown to be due to diffusion because of its activation energy equaling the full bandgap. In addition, the activation energy of the total measured dark current in each local region of the temperature-bias parameter space is evaluated. We show the benefits of capacitance analysis applied to the nB n device and review some of the requirements for correct measurements. The carrier concentration of the unintentionally doped absorber region is found to be 1.2 × 1014 cm-3 n-type. It is shown that the depletion region resides almost entirely within the absorber. Also, the doping in the nB n barrier is found to be 4 × 1015 cm-3 p-type. Minority-carrier lifetimes estimated from the dark current components are on the order of 10 μs.

  7. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    SciTech Connect

    Umlor, M.T.; Keeble, D.J.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

    1994-08-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al{sub 0.32}Ga{sub 0.68}As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al{sub 0.32}Ga{sub 0.68}:Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700{degrees}C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450{degrees}C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500{degrees}C. The nature of the defect was shown to be different for material grown at 350 and 230{degrees}C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230{degrees}C, respectively.

  8. Laser field induced optical gain in a group III-V quantum wire

    NASA Astrophysics Data System (ADS)

    Saravanan, Subramanian; Peter, Amalorpavam John; Lee, Chang Woo

    2016-08-01

    Effect of intense high frequency laser field on the electronic and optical properties of heavy hole exciton in an InAsP/InP quantum well wire is investigated taking into consideration of the spatial confinement. Laser field induced exciton binding energies, optical band gap, oscillator strength and the optical gain in the InAs0.8P0.2/InP quantum well wire are studied. The variational formulism is applied to find the respective energies. The laser field induced optical properties are studied. The optical gain as a function of photon energy, in the InAs0.8P0.2/InP quantum wire, is obtained in the presence of intense laser field. The compact density matrix method is employed to obtain the optical gain. The results show that the 1.55 μm wavelength for the fibre optic telecommunication applications is achieved for 45 Å wire radius in the absence of laser field intensity whereas the 1.55 μm wavelength is obtained for 40 Å if the amplitude of the laser field amplitude parameter is 50 Å. The characterizing wavelength for telecommunication network is optimized when the intense laser field is applied for the system. It is hoped that the obtained optical gain in the group III-V narrow quantum wire can be applied for fabricating laser sources for achieving the preferred telecommunication wavelength.

  9. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    PubMed Central

    2011-01-01

    Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea PMID:21711946

  10. Methods for forming group III-arsenide-nitride semiconductor materials

    NASA Technical Reports Server (NTRS)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    2002-01-01

    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  11. Method for fabricating semiconductor devices

    NASA Technical Reports Server (NTRS)

    Kaiser, William J. (Inventor); Grunthaner, Frank J. (Inventor); Hecht, Michael H. (Inventor); Bell, Lloyd D. (Inventor)

    1995-01-01

    A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

  12. Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO

    NASA Astrophysics Data System (ADS)

    Aalto, Timo; Harjanne, Mikko; Offrein, Bert-Jan; Caër, Charles; Neumeyr, Christian; Malacarne, Antonio; Guina, Mircea; Sheehan, Robert N.; Peters, Frank H.; Melanen, Petri

    2016-03-01

    We present a vision for the hybrid integration of advanced transceivers at 1.3 μm wavelength, and the progress done towards this vision in the EU-funded RAPIDO project. The final goal of the project is to make five demonstrators that show the feasibility of the proposed concepts to make optical interconnects and packet-switched optical networks that are scalable to Pb/s systems in data centers and high performance computing. Simplest transceivers are to be made by combining directly modulated InP VCSELs with 12 μm SOI multiplexers to launch, for example, 200 Gbps data into a single polymer waveguide with 4 channels to connect processors on a single line card. For more advanced transceivers we develop novel dilute nitride amplifiers and modulators that are expected to be more power-efficient and temperatureinsensitive than InP devices. These edge-emitting III-V chips are flip-chip bonded on 3 μm SOI chips that also have polarization and temperature independent multiplexers and low-loss coupling to the 12 μm SOI interposers, enabling to launch up to 640 Gbps data into a standard single mode (SM) fiber. In this paper we present a number of experimental results, including low-loss multiplexers on SOI, zero-birefringence Si waveguides, micron-scale mirrors and bends with 0.1 dB loss, direct modulation of VCSELs up to 40 Gbps, +/-0.25μm length control for dilute nitride SOA, strong band edge shifts in dilute nitride EAMs and SM polymer waveguides with 0.4 dB/cm loss.

  13. Investigation of the design parameters of quantum dot enhanced III-V solar cells

    NASA Astrophysics Data System (ADS)

    Driscoll, Kristina; Bennett, Mitchell; Polly, Stephen; Forbes, David V.; Hubbard, Seth M.

    2013-03-01

    The incorporation of nanostructures, such as quantum dots (QD), into the intrinsic region of III-V solar cells has been proposed as a potential route towards boosting conversion efficiencies with immediate applications in concentrator photovoltaic and space power systems. Necessary to the optimization process of this particular class of solar cells is the ability to correlate nanoscale properties with macroscopic device characteristics. To this purpose, the physics-based software Crosslight APSYS has been developed to investigate the design parameters of QD enhanced solar cells with particular focus on the InAs/GaAs system. This methodology is used to study how nanoscale variables, including size, shape and material compositions, influence photovoltaic performance. In addition, device-level engineering of the nanostructures is explored in optimizing the overall device response. Specifically, the effect of the position of the QDs within the intrinsic regions is investigated. Preliminary simulations suggest strategically placing the QDs off-center reduces non-radiative recombination and thereby the dark saturation current, contributing to a marked increase in opencircuit voltage and fill factor. The short-circuit current remains unchanged in the high field region resulting in an increase in overall conversion efficiency. To further explore this finding, a series of three samples with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell have been grown using MOCVD, fabricated and fully characterized. Contrary to predictions, the emitter-shifted devices exhibit a marked decrease in open-circuit voltage and fill factor. This behavior is attributed to non-negligible n-type background doping in the intrinsic region which shifts the region of maximum recombination towards the p-type emitter.

  14. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    SciTech Connect

    Dhaka, Veer Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri; Naureen, Shagufta; Shahid, Naeem; Jiang, Hua; Kauppinen, Esko; Srinivasan, Anand

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  15. A novel surface preparation methodology for epi-ready antimonide based III-V substrates

    NASA Astrophysics Data System (ADS)

    Dutta, P. S.; Rajagopalan, G.; Kim, H. J.; Kumar, A.

    2005-05-01

    Surfaces of GaSb substrates currently available from various commercial vendors are nowhere close to device grade GaAs, Si or InP wafer surfaces. Hence epitaxial growth and device fabrication on as-received commercial substrates poses significant difficulties amongst antimonide based researchers. Antimonide based materials are known to have poor surface oxide quality and not so well understood chemical reactions with various chemicals used to remove the oxides prior to growth. There are no existing reports on the detailed recipe for the preparation of "atomically flat and clean" surfaces that works on wafers obtained from various commercial vendors. This paper presents a detailed recipe for obtaining atomically flat and clean GaSb surfaces, irrespective of the initial polishing source. The same recipe (with slight modification) has been found to be successful with other III-V and II-VI compounds. The novel surface preparation process developed in our laboratory includes, chemical-mechanical polishing using an agglomerate-free sub-micron alumina slurry on a soft pad such as velvet, surface cleaning using dilute ammonium or potassium hydroxide-H2O solution and surfactant or glycerol, surface degreasing using organic solvents, oxide desorption using HCl-H2O and HF-H2O mixtures, mild chemical etching using ammonium sulfide and a final rinse in high purity deionized (DI) water and methanol. Using this recipe, we have been able to achieve surfaces with atomic flatness (RMS surface roughness close to 0.5 nm over a 10 x 10 mm2) and extremely clean surfaces, irrespective of the initial contamination or the sources of the wafers. Results of wafer surfaces before and after polishing using our recipe will be presented.

  16. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  17. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  18. The criterion of magnetism in semiconductor nanoobjects

    NASA Astrophysics Data System (ADS)

    Uspenskii, Yu. A.; Tikhonov, E. V.; Matsko, N. L.

    2015-06-01

    The Stoner criterion is known as a useful tool predicting the ferromagnetic state (FM) in metals. This criterion is not applied to nanoobjects, because of their discrete electron spectrum. In our paper we consider a generalization of this criterion, which can be applied to magnetism in semiconductor nanoobjects. To derive it, we compare total energies of the FM and non-magnetic states using many-body perturbation theory. The derived criterion has compact form and may be useful for prediction of ferromagnetism in nanoobjects. To check its precision, we performed first-principle calculations of several semiconductor nanoobjects in the FM and non-magnetic states and compared their results with predicted ones.

  19. Investigation of New SemiInsulating Behavior of III-V Compounds

    DTIC Science & Technology

    1990-02-28

    encapsulated Czochralski and horizontal Bridgman techniques and in epitaxial crystals prepared by liquid-phase electroepitaxy. By employing deep-level...com- crystals by LEG9 ") and horizontal Bridgman (HB)-" tech- plexes could be responsible for deep levels in GaAs. 1 7 niques has also been reported...Fig. 7) became direct band-gap semiconductors (GaAs and CdSe ) and was clearly visible after quenching of the absorption. explained in terms of a

  20. Comparison of Epitaxial Growth Techniques for III-V Layer Structures

    DTIC Science & Technology

    1992-05-22

    FOR Ill-V LAYER STRUCTURES DTIC byS ELECTE G. B. STRINGFELLOW MAY 2 819S2 A Prepared for Publication in the Proceedings of croissance de cristaux et de...epitaxial growth techniques have been used for semiconductors, including liquid phase epitaxy (LPE), chloride vapor phase epitaxy (CIVPE) using...MBE (GSMBE), organometallic MBE (OMMBE or MOMBE), and chemical beam epitaxy (CBE). II. LIQUID PHASE EPITAXY The first technique listed, LPE, was one of

  1. Mono- and polynucleation, atomistic growth, and crystal phase of III-V nanowires under varying group V flow

    SciTech Connect

    Dubrovskii, V. G.

    2015-05-28

    We present a refined model for the vapor-liquid-solid growth and crystal structure of Au-catalyzed III-V nanowires, which revisits several assumptions used so far and is capable of describing the transition from mononuclear to polynuclear regime and ultimately to regular atomistic growth. We construct the crystal phase diagrams and calculate the wurtzite percentages, elongation rates, critical sizes, and polynucleation thresholds of Au-catalyzed GaAs nanowires depending on the As flow. We find a non-monotonic dependence of the crystal phase on the group V flow, with the zincblende structure being preferred at low and high group V flows and the wurtzite structure forming at intermediate group V flows. This correlates with most of the available experimental data. Finally, we discuss the atomistic growth picture which yields zincblende crystal structure and should be very advantageous for fabrication of ternary III-V nanowires with well-controlled composition and heterointerfaces.

  2. Low-Cost Growth of III-V Layers on Si Using Close-Spaced Vapor Transport

    SciTech Connect

    Boucher, Jason W.; Greenaway, Ann L.; Ritenour, Andrew J.; Davis, Allison L.; Bachman, Benjamin F.; Aloni, Shaul; Boettcher, Shannon W.

    2015-06-14

    Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III-V photovoltaics, particularly if growth on Si substrates can be demonstrated. We present preliminary results of the growth of GaAs1-xPx with x ≈ 0.3 and 0.6, showing that CSVT can be used to produce III-V-V’ alloys with band gaps suitable for tandem devices. Additionally, we have grown GaAs on Si by first thermally depositing films of Ge and subsequently depositing GaAs by CSVT. Patterning the Ge into islands prevents cracking due to thermal mismatch and is useful for potential tandem structures.

  3. Performance of a beryllium copper nonmagnetic drill collar alloy

    SciTech Connect

    Dunlevey, F.

    1984-09-01

    Laboratory characterization and field testing show the advantages of beryllium copper Alloy 25 for use in non-magnetic drill collars, stabilizers, and subs. Beryllium copper is resistant to stress corrosion cracking failures at elevated temperature and pressure in the presence of hydrogen sulfide and dissolved chloride solutions. The alloy is more resistant than stainless steel to galling failure in threaded joints.

  4. The modified two stream instability at nonmagnetic planets

    SciTech Connect

    Bingham, R.; Kellett, B. J.; Shapiro, V. D.; Uecer, D.; Quest, K. B.

    2010-12-14

    We describe the role the modified two stream instability plays in the interaction of the solar wind with non-magnetized planets. The instability leads to the production of energetic electrons that can be responsible for the observed x-ray emission.

  5. Chemistry related to semiconductor growth involving organometallics

    NASA Astrophysics Data System (ADS)

    Husk, G. R.; Jones, K. A.; Paur, R. J.; Prater, J. T.

    1990-05-01

    OMVPE (OrganoMetallic Vapor-Phase Epitaxy) technology requirements for III-V compounds and chemistry related to semiconductor growth involving organometallics are discussed. The following subject areas are covered: semiconductor device requirements; Army II-VI deposition program/MOMBE (Metal Organic Molecular Beam Epitaxy) for IR detector applications; epitaxial growth of III-V's and II-VI's using organometallics; electrical device requirements; environmental and safety issues in MOVPE; quantum chemistry of vapor phase; carbon doping and selective epitaxy (tailoring growth chemistry in MOVPE); TBA/TBP precursors in GaAs and InP MOCVD; single source precursors for III-V OMCVD (OrganoMetallic Chemical Vapor Deposition) growth; alternate sources for MOMBE of AlGaAs; mechanism of incorporation of impurities and analysis of carbon contamination; growth on nonplanar and patterned substrates; CBE growth mechanisms; TriMethylamine Alane (a new robust precursor for MOMBE growth of AlGaAs); real-time determinations of OMCVD growth kinetics on GaAs by reflectance-difference spectroscopy; photoreflectance measurements; growth and doping mechanisms for HgCdTe; photoassisted CBE (Chemical Beam Epitaxy) of CdTe and HgCdTe alloys; in-situ analysis of ZnSe growth by OMCVD using X-ray scattering; biodegradation of GaAs IC chips and wafers; detailed models of compound semiconductor growth by MOCVD; gas phase probes of GaAs cluster chemistry; photodecomposition of organometallic compounds at 193 nm; manufacturing issues in MOCVD compound semiconductor technology.

  6. Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

    NASA Astrophysics Data System (ADS)

    Martin, M.; Caliste, D.; Cipro, R.; Alcotte, R.; Moeyaert, J.; David, S.; Bassani, F.; Cerba, T.; Bogumilowicz, Y.; Sanchez, E.; Ye, Z.; Bao, X. Y.; Pin, J. B.; Baron, T.; Pochet, P.

    2016-12-01

    The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic devices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(001) which is formed during annealing under proper hydrogen chemical potential. This phenomenon could be explained by the formation of dimer vacancy lines which could be responsible for the preferential and selective etching of one type of step leading to the double step surface creation. To check this hypothesis, different experiments have been carried in an industrial 300 mm metalorganic chemical vapor deposition where the total pressure during the annealing step of Si(001) surface has been varied. Under optimized conditions, an APBs-free GaAs layer was grown on a nominal Si(001) surface paving the way for III-V integration on silicon industrial platform.

  7. Anomalous Magnetoresistance Phenomena in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Bergeson, Jeremy D.; Lincoln, Derek M.; Shima Edelstein, Ruth; Prigodin, Vladimir N.; Epstein, Arthur J.

    2006-03-01

    We report magnetoresistance (MR) phenomena with temperature and bias dependence in organic semiconductor thin films with either nonmagnetic or magnetic contacts through high field reaching 9T. For nonmagnetic organic thin films such as Alq3 we find a low field MR up to 15%. A similar magnetic field effect has been reported earlier^1 but, as noted, the mechanism remains unclear. We propose a model of the anomalous MR where charge transport is space-charge limited. The current is determined by the e-h recombination rate. The recombination rate is field dependent, analogous to the chemical yield for radical pairs^2. Using an organic- based magnetic semiconductor^3, V[TCNE]x, and Co as magnetic contacts, with a nonmagnetic organic semiconductor (α-6T) leads to an order-of-magnitude broader zero-centered MR peak superimposed on a spin-valve effect. Possible origins of this broader MR will be discussed. 1. Francis, et al., New J. Phys. 6 185 (2004); Frankevich, et al., Phys. Rev. B 53 4498 (1996) 2. Steiner and Ulrich, Chem. Rev. 89 51 (1989) 3. Pokhodnya, et al., Adv. Mater. 12 410 (2000); Prigodin, et al., Adv. Mater. 14 1230 (2002); Shima Edelstein, et al., Mater. Res. Soc. Symp. Proc. 871E I7.3 (2005)

  8. Chemical and molecular beam epitaxy of III-V nanowires on silicon for photovoltaic application

    NASA Astrophysics Data System (ADS)

    Radhakrishnan, Gokul

    Nanowires, due to their unique structure and carrier transport abilities, have sparked huge interest in the semiconductor industry. An array of nanometric size wires inserted between the p and n conductivity regions of a conventional solar cell or core shell type p-n junction nanowires synergized with semiconductor nanocrystals can lead to faster carrier collection, thereby improving device performance. This work investigates the growth of GaAs and InP semiconductor nanowires on silicon (111) using Chemical Beam Epitaxy (CBE) and Molecular Beam Epitaxy (MBE). Uniform gold nanoparticles acting as growth centers in the Vapor Liquid Solid mode of growth were generated by using the cheap and rapid technique called Nanosphere Lithography (NSL). Variation of the experimental parameters during NSL resulted in honeycomb and hexagonal patterns of gold nanoparticles. A high degree of selectivity was obtained for CBE grown nanowires whereas the MBE grown GaAs nanowires revealed the formation of a thick polycrystalline wetting layer at the interface. The CBE grown InP nanowires mostly maintained the honeycomb structure although they were found to be oriented contrary to the expected <111> direction. SEM analysis of GaAs nanowires grown by CBE showed that during growth, the nanowires may coalesce with each other resulting in unique structures such as bipods, tripods and multipods. High resolution TEM analysis of single GaAs nanowires revealed periodic formation of contrasting materials. Diffraction patterns recorded at these dark contrast areas confirmed the formation of hexagonal wurtzite single crystal structures interspaced with cubic zincblende single crystal structures. These nanowires can be used for photovoltaic applications or as light emitting devices. In addition, the formation of superlattices of different crystal structures can pave the way for novel quantum confined optoelectronic devices.

  9. III-V photocathode with nitrogen doping for increased quantum efficiency

    NASA Technical Reports Server (NTRS)

    James, L. W. (Inventor)

    1976-01-01

    An increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

  10. Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctions

    NASA Technical Reports Server (NTRS)

    Seungwon, L.; Jonsson, L.; Wilkins, J.; Bryant, G.; Klimeck, G.

    2001-01-01

    The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.

  11. Threading dislocation reduction in III-V films: Theoretical modeling and experimental methods

    NASA Astrophysics Data System (ADS)

    Mathis, Sheila Kathleen

    Heteroepitaxy remains the most efficient and successful way to integrate materials with the same crystal structure but different lattice constants and optoelectronic properties. The purpose of this work is to understand the processes of strain relaxation and subsequent threading dislocation (TD) reduction through modeling and experiment. The interpretation of these data is made according to a previously published model that is based on dislocation reactions. 1,2 These reactions are the sole mechanism for threading dislocation reduction in III--V epitaxial films.3 Gallium nitride, with no available substrate even close to the lattice-matched condition, has a unique microstructure that develops as a result of initial island growth. Dislocation densities on the order of 109--10 10/cm2 are routinely measured in GaN grown on sapphire. Dislocation reduction in these hexagonal films is extremely slow, and it is shown in Chapter II that film thicknesses on the order of a substrate thickness are required to reduce threading dislocation densities to a low (10 6/cm2) level. A model is developed to treat the reduction of TDs in (0001)-oriented films that explains the non-saturating TD density in GaN. Screw dislocation behavior is shown to strongly affect the dislocation density falloff with thickness. Threading dislocation reduction in low-temperature-grown GaAs (250--350°C) and InGaAs was known to be more efficient than in high-temperature-grown GaAs (580°C). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to study the microstructure of GaAs grown on InP substrates at temperatures between 250 and 580°C to determine the mechanism by which TD reduction was enhanced. While a high level of arsenic antisite defects [ASGa] may affect the TD density at temperatures below 300°C, they do not account for the improved dislocation reduction. When dislocations are generated at high temperature, the TD density on the (111)A and (111)B planes is asymmetric

  12. A new high volume MOVPE reactor for III-V solar cells

    SciTech Connect

    Ermer, J.; Vijaykumar, P.S.; Chang, K.I.; Lillington, D.R.; Cavicchi, B.T.; Woelk, E.; Strauch, G.; Schmitz, D.; Jurgensen, H.

    1994-12-31

    A new MOVPE reactor is described which allows cost effective manufacturing of GaAs/Ge solar cells. The reactor, which has a batch size in excess of 0.25 m{sup 2}, was co-developed by Spectrolab and Aixtron Semiconductor Technologies over a two year time frame and was installed at Spectrolab in late 1993. Manufacturing readiness data on large area single junction GaAs/Ge solar cells show that the thickness and compositional uniformity of GaAs and AlGaAs layers grown in the system are {+-} 3%, and {+-} 1.5% respectively. There is excellent correlation between empirical data and simulations performed during the initial reactor development phase. The minimum average AM0, 28 C efficiencies of 7 mil and 5.5 mil single junction GaAs/Ge solar cells, recently manufactured from material grown on this system, are over 18.5%.

  13. Evidence of space charge regions within semiconductor nanowires from Kelvin probe force microscopy.

    PubMed

    Narváez, Angela C; Chiaramonte, Thalita; Vicaro, Klaus O; Clerici, João H; Cotta, Mônica A

    2009-11-18

    We have studied the equilibrium electrostatic profile of III-V semiconductor nanowires using Kelvin probe force microscopy. Qualitative agreement of the measured surface potential levels and expected Fermi level variation for pure InP and InAs nanowires is obtained from electrical images with spatial resolution as low as 10 nm. Surface potential mapping for pure and heterostructured nanowires suggests the existence of charge transfer mechanisms and the formation of a metal-semiconductor electrical contact at the nanowire apex.

  14. Effects of non-magnetic doping on high- Tc cuprates

    NASA Astrophysics Data System (ADS)

    Ming-wen, Xiao; Zheng-zhong, Li; Da-ning, Shi

    1992-11-01

    The Anderson lattice model (ALM) is adopted to study the substitution effects of non-magnetic impurities at Cu-sites on the properties of high- Tc superconductors by the slave-boson technique. We found that they can weaken the effective strength of Cu O hybridization and lower the characteristic temperature Tk of the normal state. The ability of these effects to depress superconductivity is proved to be important and not negligible. Non-magnetic impurities turn out to be pair-breaking and responsible for the quick decreasing of Tc because of the energy dependence of the superconducting order parameter in ALM. Particularly, the linear relationship between Tc and doping concentration in the dilute case is obtained analytically, which is in good agreement with experiment.

  15. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    NASA Astrophysics Data System (ADS)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  16. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    PubMed Central

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices. PMID:26387967

  17. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    DOEpatents

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  18. The Potts model on a Bethe lattice with nonmagnetic impurities

    SciTech Connect

    Semkin, S. V. Smagin, V. P.

    2015-10-15

    We have obtained a solution for the Potts model on a Bethe lattice with mobile nonmagnetic impurities. A method is proposed for constructing a “pseudochaotic” impurity distribution by a vanishing correlation in the arrangement of impurity atoms for the nearest sites. For a pseudochaotic impurity distribution, we obtained the phase-transition temperature, magnetization, and spontaneous magnetization jumps at the phase-transition temperature.

  19. Optimized III-V Multijunction Concentrator Solar Cells on Patterned Si and Ge Substrates: Final Technical Report, 15 September 2004--30 September 2006

    SciTech Connect

    Ringel, S. A.

    2008-11-01

    Goal is to demo realistic path to III-V multijunction concentrator efficiencies > 40% by substrate-engineering combining compositional grading with patterned epitaxy for small-area cells for high concentration.

  20. Robustness against non-magnetic impurities in topological superconductors

    NASA Astrophysics Data System (ADS)

    Nagai, Y.; Ota, Y.; Machida, M.

    2014-12-01

    We study the robustness against non-magnetic impurities in a three-dimensional topological superconductor, focusing on an effective model (massive Dirac Bogoliubov-de Gennes (BdG) Hamiltonian with s-wave on-site pairing) of CuxBi2Se3 with the parameter set determined by the first-principles calculation. With the use of the self-consistent T- matrix approximation for impurity scattering, we discuss the impurity-concentration dependence of the zero-energy density of states. We show that a single material variable, measuring relativistic effects in the Dirac-BdG Hamiltonian, well characterizes the numerical results. In the nonrelativistic limit, the odd-parity fully-gapped topological superconductivity is fragile against non-magnetic impurities, since this superconductivity can be mapped onto the p-wave superconductivity. On the other hand, in the ultrarelativistic limit, the superconductivity is robust against the non-magnetic impurities, since the effective model has the s-wave superconductivity. We derive the effective Hamiltonian in the both limit.

  1. Specific Approach for Size-Control III-V Quantum/Nano LED Fabrication for Prospective White Light Source

    DTIC Science & Technology

    2007-08-10

    The Final Report Title: Specific approach for size-control III-V based quantum/nano LED fabrication for prospective white ...COVERED 14-06-2005 to 14-12-2005 4. TITLE AND SUBTITLE Size controlled GaN based quantum dot LED for the prospective white light source 5a. CONTRACT...structure LED The physical model of the PC LED for optical simulation is shown in Figure 10. The LED are composed with p-type GaN/ MQW of InGaN /GaN/ n

  2. Hybrid III-V on Si grating as a broadband reflector and a high-Q resonator

    NASA Astrophysics Data System (ADS)

    Chung, Il-Sug; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-03-01

    Hybrid grating (HG) with a high-refractive-index cap layer added onto a high contrast grating (HCG), can provide a high reflectance close 100 % over a broader wavelength range than HCGs, or work as a ultrahigh quality (Q) factor resonator. The reflection and resonance properties of HGs have been investigated and the mechanisms leading to these properties are discussed. A HG reflector sample integrating a III-V cap layer with InGaAlAs quantum wells onto a Si grating has been fabricated and its reflection property has been characterized. The HG-based lasers have a promising prospect for silicon photonics light source or high-speed laser applications.

  3. 30 CFR 57.22222 - Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). 57.22222 Section 57.22222 Mineral Resources MINE SAFETY AND HEALTH....22222 Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). Brattice cloth...

  4. 30 CFR 57.22222 - Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). 57.22222 Section 57.22222 Mineral Resources MINE SAFETY AND HEALTH....22222 Ventilation materials (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). Brattice cloth...

  5. Wavelength-tunable entangled photons from silicon-integrated III-V quantum dots

    NASA Astrophysics Data System (ADS)

    Chen, Yan; Zhang, Jiaxiang; Zopf, Michael; Jung, Kyubong; Zhang, Yang; Keil, Robert; Ding, Fei; Schmidt, Oliver G.

    2016-01-01

    Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

  6. Addressing the electronic properties of III-V nanowires by photoluminescence excitation spectroscopy

    NASA Astrophysics Data System (ADS)

    De Luca, M.

    2017-02-01

    Semiconductor nanowires (NWs) have been attracting an increasing interest in the scientific community. This is due to their peculiar filamentary shape and nanoscale diameter, which renders them versatile and cost-effective components of novel technological devices and also makes them an ideal platform for the investigation of a variety of fascinating physical effects. Absorption spectroscopy is a powerful and non-destructive technique able to provide information on the physical properties of the NWs. However, standard absorption spectroscopy is hard to perform in NWs, because of their small volume and the presence of opaque substrates. Here, we demonstrate that absorption can be successfully replaced by photoluminescence excitation (PLE). First, the use of polarization-resolved PLE to address the complex and highly-debated electronic band structure of wurtzite GaAs and InP NWs is shown. Then, PLE is used as a statistically-relevant method to localize the presence of separate wurtzite and zincblende NWs in the same InP sample. Finally, a variety of resonant exotic effects in the density of states of In x Ga1-x As/GaAs core/shell NWs are highlighted by high-resolution PLE. , which features invited work from the best early-career researchers working within the scope of J. Phys. D. This project is part of the Journal of Physics’ series 50th anniversary celebrations in 2017. Marta De Luca was selected by the Editorial Board of J. Phys. D as a Leader.

  7. Carrier transport in III-V quantum-dot structures for solar cells or photodetectors

    NASA Astrophysics Data System (ADS)

    Wang, Wenqi; Wang, Lu; Jiang, Yang; Ma, Ziguang; Sun, Ling; Liu, Jie; Sun, Qingling; Zhao, Bin; Wang, Wenxin; Liu, Wuming; Jia, Haiqiang; Chen, Hong

    2016-09-01

    According to the well-established light-to-electricity conversion theory, resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent, which have been observed in quantum dots without a p-n junction at an external bias. Here, we experimentally observed more than 88% of the resonantly excited photo carriers escaping from InAs quantum dots embedded in a short-circuited p-n junction to form photocurrent. The phenomenon cannot be explained by thermionic emission, tunneling process, and intermediate-band theories. A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p-n junction. The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, 11374340, and 11474205) and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

  8. A direct thin-film path towards low-cost large-area III-V photovoltaics.

    PubMed

    Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H; Zheng, Maxwell; Battaglia, Corsin; Hettick, Mark; Kiriya, Daisuke; Takei, Kuniharu; Lobaccaro, Peter; Beeman, Jeffrey W; Ager, Joel W; Maboudian, Roya; Chrzan, Daryl C; Javey, Ali

    2013-01-01

    III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1-3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth processes. The films exhibit electron mobilities as high as 500 cm²/V-s and minority carrier lifetimes as long as 2.5 ns. Furthermore, under 1-sun equivalent illumination, photoluminescence efficiency measurements indicate that an open circuit voltage of up to 930 mV can be achieved, only 40 mV lower than measured on a single crystal reference wafer.

  9. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    NASA Astrophysics Data System (ADS)

    Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

    2017-01-01

    For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  10. Preservation of water samples for arsenic(III/V) determinations: An evaluation of the literature and new analytical results

    USGS Publications Warehouse

    McCleskey, R.B.; Nordstrom, D.K.; Maest, A.S.

    2004-01-01

    Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2SO4, and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO4.

  11. A direct thin-film path towards low-cost large-area III-V photovoltaics

    PubMed Central

    Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H.; Zheng, Maxwell; Battaglia, Corsin; Hettick, Mark; Kiriya, Daisuke; Takei, Kuniharu; Lobaccaro, Peter; Beeman, Jeffrey W.; Ager, Joel W.; Maboudian, Roya; Chrzan, Daryl C.; Javey, Ali

    2013-01-01

    III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1–3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth processes. The films exhibit electron mobilities as high as 500 cm2/V-s and minority carrier lifetimes as long as 2.5 ns. Furthermore, under 1-sun equivalent illumination, photoluminescence efficiency measurements indicate that an open circuit voltage of up to 930 mV can be achieved, only 40 mV lower than measured on a single crystal reference wafer. PMID:23881474

  12. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    SciTech Connect

    Daix, N. Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  13. Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

    NASA Astrophysics Data System (ADS)

    Hou, Zhipeng; Wang, Yue; Liu, Enke; Zhang, Hongwei; Wang, Wenhong; Wu, Guangheng

    2015-11-01

    High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2 K in a magnetic field of 1 T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2 K-2016 cm2V-1s-1 at 300 K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.

  14. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  15. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  16. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  17. Magnetic Vortex Induced by Nonmagnetic Impurity in Frustrated Magnets

    NASA Astrophysics Data System (ADS)

    Lin, Shi-Zeng; Hayami, Satoru; Batista, Cristian D.

    2016-05-01

    We study the effect of a nonmagnetic impurity inserted in a two-dimensional frustrated ferromagnet above its saturation magnetic field Hsat for arbitrary spin S . We demonstrate that the ground state includes a magnetic vortex that is nucleated around the impurity over a finite range of magnetic field Hsat≤H ≤HsatI. Upon approaching the quantum critical point at H =Hsat, the radius of the magnetic vortex diverges as the magnetic correlation length: ξ ∝1 /√{H -Hsat }. These results are derived both for the lattice and in the continuum limit.

  18. Performance of a beryllium copper nonmagnetic drill collar alloy

    SciTech Connect

    Dunlevey, F.

    1986-12-01

    Laboratory characterization and extensive field service show the advantages of beryllium copper Brush Alloy 25 for use in nonmagnetic drill collars (NMDC)'s, stabilizers, and subs. Beryllium copper is resistant to stress-corrosion-cracking (SCC) failures at elevated temperatures and pressures in the presence of H/sub 2/S and dissolved chloride solutions. The alloy is more resistant than stainless steel to galling failure in threaded joints. Its magnetic permeability is lower than stainless steel and is unaffected by service conditions.

  19. Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

    NASA Technical Reports Server (NTRS)

    Leon, R.; Marcinkevicius, S.; Siegert, J.; Magness, B.; Taylor, W.; Lobo, C.

    2002-01-01

    The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

  20. Multi-Band and Broad-Band Infrared Detectors Based on III-V Materials for Spectral Imaging Instruments

    NASA Technical Reports Server (NTRS)

    Bandara, S. V.; Gunapala, S. D.; Liu, J. K.; Rafol, S. B.; Hill, C. J.; Ting, D. Z.; Mumolo, J. M.; Trinh, T. Q.

    2005-01-01

    Quantum well infrared photodetector technology has shown remarkable success by realizing large-format focal plane arrays in both broad-bands and in multi-bands. The spectral response of these detectors based on the III-V material system are tailorable within the mid and long wavelength IR bands (similar to 3-25 mu m) and possibly beyond. Multi-band and broad-band detector arrays have been developed by vertically integrating stacks of multi quantum wells tailored for response in different wavelengths bands. Each detector stack absorbs photons within the specified wavelength band while allowing the transmission other photons, thus efficiently permitting multiband detection. Flexibility in many design parameters of these detectors allows for tuning and tailoring the spectral shape according to application requirements, specifically for spectral imaging instruments.

  1. Optical and electronic properties of some semiconductors from energy gaps

    NASA Astrophysics Data System (ADS)

    Tripathy, Sunil K.; Pattanaik, Anup

    2016-03-01

    II-VI and III-V tetrahedral semiconductors have significant potential for novel optoelectronic applications. In the present work, some of the optical and electronic properties of these groups of semiconductors have been studied using a recently proposed empirical relationship for refractive index from energy gap. The calculated values of these properties are also compared with those calculated from some well known relationships. From an analysis of the calculated electronic polarisability of these tetrahedral binary semiconductors from different formulations, we have proposed an empirical relation for its calculation. The predicted values of electronic polarisability of these semiconductors agree fairly well with the known values over a wide range of energy gap. The proposed empirical relation has also been used to calculate the electronic polarisability of some ternary compounds.

  2. Predicted Growth of Two-Dimensional Topological Insulators Consisting of Hydrogenated III-V Thin films on Si(111) Substrate

    NASA Astrophysics Data System (ADS)

    Chuang, Feng-Chuan; Crisostomo, Christian; Yao, Liang-Zi; Yeh, Chun-Chen; Lai, Shu-Ming; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Lin, Hsin; Albao, Marvin; Bansil, Arun

    We have carried out systematic first-principles electronic structure calculations of growth of ultrathin films of compounds of group III (B, Al, In, Ga and Tl) with group V (N, P, As, Sb and Bi) elements on Si(111) substrate, including effects of hydrogenation. A total of six compounds (GaBi, InBi, TlBi, TlAs, TlSb and TlN) are identified to be nontrivial in unhydrogenated case; whereas for hydrogenated case, only four (GaBi, InBi, TlBi and TlSb) remains nontrivial. The band gap is found to be as large as 855 meV for the hydrogenated TlBi film, making this class of III-V materials suitable for room temperature applications. TlBi remains topologically nontrivial with a large band gap at various hydrogen coverages, indicating the robustness of its band topology against bonding effects of substrates. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN and TlBi which can be driven into the nontrivial phase via strain. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.

  3. Removal of Arsenic (III, V) from aqueous solution by nanoscale zero-valent iron stabilized with starch and carboxymethyl cellulose

    PubMed Central

    2014-01-01

    In this work, synthetic nanoscale zerovalent iron (NZVI) stabilized with two polymers, Starch and Carboxymethyl cellulose (CMC) were examined and compared for their ability in removing As (III) and As (V) from aqueous solutions as the most promising iron nanoparticles form for arsenic removal. Batch operations were conducted with different process parameters such as contact time, nanoparticles concentration, initial arsenic concentration and pH. Results revealed that starch stabilized particles (S-nZVI) presented an outstanding ability to remove both arsenate and arsenite and displayed ~ 36.5% greater removal for As (V) and 30% for As (III) in comparison with CMC-stabilized nanoparticles (C-nZVI). However, from the particle stabilization viewpoint, there is a clear trade off to choosing the best stabilized nanoparticles form. Removal efficiency was enhanced with increasing the contact time and iron loading but reduced with increasing initial As (III, V) concentrations and pH. Almost complete removal of arsenic (up to 500 μg/L) was achieved in just 5 min when the S-nZVI mass concentration was 0.3 g/L and initial solution pH of 7 ± 0.1. The maximum removal efficiency of both arsenic species was obtained at pH = 5 ± 0.1 and starched nanoparticles was effective in slightly acidic and natural pH values. The adsorption kinetics fitted well with pseudo-second-order model and the adsorption data obeyed the Langmuir equation with a maximum adsorption capacity of 14 mg/g for arsenic (V), and 12.2 mg/g for arsenic (III). It could be concluded that starch stabilized Fe0 nanoparticles showed remarkable potential for As (III, V) removal from aqueous solution e.g. contaminated water. PMID:24860660

  4. Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

    SciTech Connect

    Marin, E. G. Ruiz, F. G. Godoy, A. Tienda-Luna, I. M.; Gámiz, F.

    2015-07-14

    We discuss the necessity of the exact implicit Momentum Relaxation Time (MRT) solution of the Boltzmann transport equation in order to achieve reliable carrier mobility results in semiconductor nanowires. Firstly, the implicit solution for a 1D electron gas with a isotropic bandstructure is presented resulting in the formulation of a simple matrix system. Using this solution as a reference, the explicit approach is demonstrated to be inaccurate for the calculation of inelastic anisotropic mechanisms such as polar optical phonons, characteristic of III-V materials. Its validity for elastic and isotropic mechanisms is also evaluated. Finally, the implications of the MRT explicit approach inaccuracies on the total mobility of Si and III-V NWs are studied.

  5. Accretion Effects on Disks Around Non-Magnetic Compact Objects

    NASA Astrophysics Data System (ADS)

    Montgomery, Michele M.

    2013-02-01

    Accretion disks in compact binaries are thought to sometimes tilt and precess in the retrograde direction as indicated by modulations in light curves and/or signals. Using 3D Smoothed Particle Hydrodynamics and a low mass transfer rate, Montgomery (2012) shows the disk in non-magnetic Cataclysmic Variables tilts naturally after enough time has passed. In that work, twice the fundamental negative superhump signal 2ν_ is associated with disk tilt around the line of nodes, gas stream overflow approximately twice per orbital period, and retrograde precession. In this work, we show that after enough additional time has passed in the same simulation, the 4ν_ harmonic appears. The decrease in the 2ν_ amplitude approximately equals the amplitude of the 4ν_ harmonic. We discuss the implications.

  6. Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes

    SciTech Connect

    Wang, Y. Y.; Song, C. Wang, G. Y.; Zeng, F.; Pan, F.

    2013-11-11

    Ferromagnetic electrodes play a crucial role in magnetoresistance effect and spin injection, whereas the essential features of non-magnetic metal electrodes in spintronics are commonly ignored except for their electrical conductivity. Here, we verify that the room-temperature tunneling anisotropic magnetoresistance (TAMR) behavior in antiferromagnet-based [Pt/Co]/IrMn/AlO{sub x}/metal (metal = Pt, Au, Cu, Al) junctions is insensitive to the top metal electrodes. Similar out-of-plane signals are detected for different electrodes, in contrast to the varied shapes of in-plane TAMR curves which are most likely attributed to the differences in the multidomain structure of the magnetic electrode. This would add a different dimension to spintronics.

  7. Magnetic Nanoparticles in Non-magnetic CNTs and Graphene

    NASA Astrophysics Data System (ADS)

    Kayondo, Moses; Seifu, Dereje

    Magnetic nanoparticles were embedded in non-magnetic CNTs and graphene matrix to incorporate all the advantages and the unique properties of CNTs and graphene. Composites of CNTs and graphene with magnetic nanoparticles may offer new opportunities for a wide variety of potential applications such as magnetic data storage, magnetic force microscopy tip, electromagnetic interference shields, thermally conductive films, reinforced polymer composites, transparent electrodes for displays, solar cells, gas sensors, magnetic nanofluids, and magnetically guided drug delivery systems. Magnetic nanoparticles coated CNTs can also be used as an electrode in lithium ion battery to replace graphite because of the higher theoretical capacity. Graphene nanocomposites, coated with magnetic sensitive nanoparticles, have demonstrated enhanced magnetic property. We would like to acknowledge support by NSF-MRI-DMR-1337339.

  8. Polaronic trapping in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Raebiger, Hannes

    2012-02-01

    GaN doped with iron is an interesting candidate material for magnetic semiconductors, as p-d coupling between the localized Fe-d and extended N-p hole states is expected to facilitate long-range ferromagnetic alignment of the Fe spins [1]. This picture of extended states in GaN:Fe, however, falls apart due to a polaronic localization of the hole carriers nearby the Fe impurities. To elucidate the carrier localization in GaN:Fe and related iron doped III-V semiconductors, I present a systematic study using self-interaction corrected density-functional calculations [2]. These calculations predict three distinct scenarios. (i) Some systems do sustain extended host-like hole states, (ii) some exhibit polaronic trapping, (iii) and some exhibit carrier trapping at Fe-d orbitals. These behaviors are described in detail to give an insight as to how to distinguish them experimentally. I thank T. Fujita, C. Echeverria-Arrondo, and A. Ayuela for their collaboration.[4pt] [1] T. Dietl et al, Science, 287, 1019 (2000).[0pt] [2] S. Lany and A. Zunger, Phys. Rev. B, 80, 085202 (2009).

  9. Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

    SciTech Connect

    Scarpulla, M.A.; Stone, P.R.; Sharp, I.D.; Haller, E.E.; Dubon, O.D.; Beeman, J.W.; Yu, K.M.

    2008-02-05

    The electronic and magnetic effects of intentional compensation with non-magnetic donors are investigated in the ferromagnetic semiconductors Ga1-xMnxAs and Ga1-xMnxP synthesized using ion implantation and pulsed-laser melting (II-PLM). It is demonstrated that compensation with non-magnetic donors and MnI have similarqualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-xMnxAs can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-xMnxAs:Te can be described by thermal activation to the mobility edge and simply-activated hopping transport. Ga1-xMnxP doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-xMnxAs:Te and Ga1-xMnxP:S having TCs of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic 'puddles' which at low temperatures.

  10. In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

    NASA Astrophysics Data System (ADS)

    Paszuk, Agnieszka; Dobrich, Anja; Koppka, Christian; Brückner, Sebastian; Duda, Marek; Kleinschmidt, Peter; Supplie, Oliver; Hannappel, Thomas

    2017-04-01

    III-V integration on active Si-bottom cells promises not only high-efficiency multi-junction solar cells but also lower production costs. In situ preparation of an adequate Si p-n junction in metalorganic chemical vapor deposition ambient is challenging, particularly since the final Si surface should be atomically well-ordered to enable low-defect III-V nucleation. Precisely, a single-domain Si(100) surface with double layer steps needs to be prepared in order to suppress antiphase disorder in subsequently grown III-V layer structures on top of the Si p-n junction. We first investigate the formation of a n+-type collector in Si(100) as a result of annealing in tertiarybutylphosphine (TBP) or tertiarybutylarsine (TBAs) ambient. We illustrate how the n-type doping concentrations and their depth profiles depend on the essential preparation parameters, such as precursor partial pressures, exposure and annealing time, as well as reactor pressure. Subsequently, by applying in situ reflectance anisotropy spectroscopy, we find that exposure of Si(100) to TBP or TBAs leads to atomic disorder on the surface. Further, we apply an additional annealing step without precursor supply leading to predominantly (1×2) reconstructed Si(100) surfaces, which are suitable for subsequent low-defect III-V growth.

  11. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    DTIC Science & Technology

    2015-08-27

    solar cell. Later on, the optical addressing has been achieved in a near-and-long-wave infrared multiband photodetector integrated by a NIR AlGaAs...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...Center for Photonics Innovation  &  Fulton Entrepreneurial Professor, School of Electrical, Computer and  Energy  Engineering  Arizona State University

  12. Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

    SciTech Connect

    Majumdar, Kausik

    2014-05-07

    In this paper, we use a tight binding Hamiltonian with spin orbit coupling to study the real and complex band structures of relaxed and strained GaAs. A simple d orbital on-site energy shift coupled with appropriate scaling of the off-diagonal terms is found to correctly reproduce the band-edge shifts with strain. Four different 〈100〉 strain combinations, namely, uniaxial compressive, uniaxial tensile, biaxial compressive, and biaxial tensile strain are studied, revealing rich valence band structure and strong relative orientation dependent tunneling. It is found that complex bands are unable to provide unambiguous tunneling paths away from the Brillouin zone center. Tunneling current density distribution over the Brillouin zone is computed using non-equilibrium Green's function approach elucidating a physical picture of band to band tunneling.

  13. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence.

    PubMed

    Peczonczyk, Sabrina L; Mukherjee, Jhindan; Carim, Azhar I; Maldonado, Stephen

    2012-03-13

    Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.

  14. Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot

    SciTech Connect

    Kabi, Sanjib; Perera, A. G. Unil

    2015-03-28

    The intersublevel absorption peak energy and absorption coefficient of non-uniform quantum dot (QD) ensembles are calculated analytically. The effect of size variations and size distribution of QDs on their energy states is analyzed. The dots are considered as a quantum box with finite potential at the barriers and the size distribution described by a Gaussian function. The influence of the aspect ratio (base to height ratio) of the QDs on the optical transitions is studied. Our model predicts the dot size (height and base) accurately to determine the absorption peaks and corresponding absorption coefficient. We also compute the absorption coefficient of the QD with different size distributions to verify the results calculated using this model with the reported experimental and other theoretical results.

  15. Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

    NASA Astrophysics Data System (ADS)

    Uspenskii, Yu. A.; Kulatov, E. T.

    2009-04-01

    We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.

  16. Research Workshop on Computational Condensed Matter Physics: Total Energy Methods and Physics of III-V Semiconductors Held in Paris, France on January 4th-6th, 1990

    DTIC Science & Technology

    1990-01-06

    gradients method that works 9:50 Discussion (10 min.) 10:00 R. M. Martin (20 min): The nature of carbon : electronic calculations on solid and liquid phases 10...compounds are suggested as candidates for superhard materials and new superconductors. . - .. .... . I, )I MASSIVELY PARALLEL COMPUTATION AND SCIENCE... CARBON : ELECTRONIC CALCULATIONS ON SOLID AND LIQUID PHASES Richard M. MARTIN 1 , Giulla GALLI1 , Roberto CAR 2 and Michele PARRINELLO 2 , 3 1

  17. Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

    DTIC Science & Technology

    2012-06-29

    Goffman , M. F.; Bourgoin, J.-P. Appl. Phys. Lett. 2007, 90, 233108. (5) Nougaret, L.; Happy, H.; Dambrine, G.; Derycke, V.; Bourgoin, J.-P.; Green, A. A...Krishna, S.; Chueh, Y.-L.; Guo, J.; Javey, A. Nano Lett. 2012, 12, 2060−2066. (27) Chimot, N.; Derycke, V.; Goffman , M. F.; Bourgoin, J. P.; Happy, H

  18. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993

    SciTech Connect

    Ast, D.G.; Watson, G.P.; Matragrano, M.

    1995-03-01

    Misfit dislocations in gallium arsenides, indium arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described.

  19. Study of Deep-Level Defects and Transport Properties vs Growth Parameters and Annealing Conditions in III-V Compound Semiconductors.

    DTIC Science & Technology

    1983-06-10

    1977). 42. C. M. Martin et al., Electron Lett., vol.13, 191 (1977). 43. R.D.Fairman et al., Inst. Phys. Conf.Ser., r145,134 (1977). 44. L.D. Aukerman ...70 (1977). 54. L. W. Aukerman and R. D. Graft, Phys. Rev.B. vol.127, 1576 (1962). 55. H. Lefevre and M Schulz, Appl. Phys., 12, 45 (1977). 56. D. V

  20. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

    SciTech Connect

    Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; Lai, Shu-Ming; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

    2015-11-05

    We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.

  1. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

    DOE PAGES

    Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; ...

    2015-11-05

    We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One andmore » two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.« less

  2. Are Electro-Luminescence Defects in Concentrator Iii-V Cells Responsible to Thermal Runaway and Sudden Death?

    NASA Astrophysics Data System (ADS)

    Araki, Kenji; Al Taher, Omar; Nagai, Hirokazu; Hebert, Peter; Valles, Juan

    2011-12-01

    Two types of failure of III-V cells in CPV system by Daido Steel have been observed. One is thermal runaway and another is what we call a electrical shock. This paper will discuss on the frequency of the cell failure seen in a field and on experiments to determine the root cause of thermal runaway. Failures by the electrical shock were not related to thermal runaway, and a packaging solution to the failure by the electrical shock was found which will be published at another time. A detailed investigation of 30 kW field was undertaken to identify failed cells. After the other failure mechanism has been removed, experiments can be conducted on thermal runaway. Thermal runaway can occur due to loss of thermal conduction, such as voids or discontinuities in the thermal interchange material bonding cell to heat sink. It has been hypothesized that thermal runaway can also occur at location of cell defects as identified by electroluminescence. So far it we have not been able to induce thermal runaway at locations of electroluminescence defects.

  3. Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers

    NASA Astrophysics Data System (ADS)

    Padilha, J. E.; Janotti, A.; Fazzio, A.; da Silva, A. J. R.

    2016-11-01

    We show that III-V bismuth-based two-dimensional (2D) materials grown on an anion-terminated SrTe (111) substrate are 2D topological insulators. The III-Bi layers exhibit large nontrivial band gaps, ranging from 0.15 to 0.72 eV, depending on the passivation on the top surface, i.e., using hydrogen or halogens. We find that Γ -centered Dirac helical states, protected by time-reversal symmetry, appear at the edges of nanoribbon structures made of III-Bi layers on the SrTe substrate. The nontrivial character of the band gap is also determined by calculations of the Z2 invariant. We also find that the topological phase is maintained in the ultrathin quantum well heterostructures SrTe/III-Bi/SrTe, i.e., when the 2D materials are sandwiched between SrTe along the [111] direction, opening a new route for the fabrication of nanostructured devices based on 2D quantum spin Hall insulators.

  4. Rapid 2D incoherent mirror fabrication by laser interference lithography and wet etching for III-V MQW solar cells

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Freundlich, Alex

    2016-03-01

    Optimization of non-planar antireflective coating and back- (or front-) surface texturing are widely studied as advanced light management approach to further reduce the reflection losses and increase the sunlight absorption path in solar cells. Rear reflectors have been developed from coherent mirrors to incoherent mirrors in order to further increase light path, which can significantly improve the efficiency and allow for much thinner devices. A Lambertian surface, which has the most random texture, can theoretically raise the light path to 4n2 times that of a smooth surface. It's a challenge however to fabricate ideal Lambertian texture, especially in a fast and low cost way. In this work, a method is developed to overcome this challenge that combines the use of laser interference lithography (LIL) and selective wet etching. This approach allows for a rapid (10 min) wafer scale (3 inch wafer) texture processing with sub-wavelength (nano)-scale control of the pattern and the pitch. The technique appears as being particularly attractive for the development of ultrathin III-V devices, or in overcoming the weak sub-bandgap absorption in devices incorporating quantum dots or quantum wells. The structure of the device is demonstrated, without affecting active layers.

  5. Interface simulation of strained and non-abrupt III-V quantum wells. Part 1: band profile calculation

    NASA Astrophysics Data System (ADS)

    Lamberti, C.

    1996-01-01

    This work presents a program, based on the Van de Walle-Martin model solid theory, able to compute the most important physical quantities of any In 1- xGa xAs yP 1- y quaternary epitaxially strained growth on any In 1- zGa zAs wP 1- w hypothetical substrate. The adopted interface-band alignment procedure is extensively described. The effect of strain on several examples of ideal heterostructures characterized by abrupt interfaces is discussed in detail. Furthermore, the problem of a composition gradient spread over some monolayers at the interfaces of III-V quantum wells and superlattices, due to the technological problems in group V switches in the present epitaxial techniques is treated extensively. The interface layers are thus non-intentionally strained on the substrate lattice parameter causing a local change in the bands profile along the growth direction. The differences between an ideal rectangular potential and the real profile are shown. The output files of this program consist in the band profiles for electrons, heavy and light holes, which will be used by the program PLSIMUL (described in a subsequent article) to compute the corresponding quantized levels to be compared with experimental 4 K photoluminescence data.

  6. III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

    NASA Astrophysics Data System (ADS)

    Datta, Kanak; Khosru, Quazi D. M.

    2016-04-01

    In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthreshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10 nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.

  7. Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

    NASA Astrophysics Data System (ADS)

    Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; Lai, Shu-Ming; Huang, Zhi-Quan; Hsu, Chia-Hsiu; Chuang, Feng-Chuan; Lin, Hsin; Bansil, Arun

    2015-11-01

    We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.

  8. Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

    NASA Astrophysics Data System (ADS)

    Orchard, Jonathan R.; Wu, Jiang; Chen, Siming; Jiang, Qi; Ward, Thomas; Beanland, Richard; Lui, Huiyun; Mowbray, David

    2015-02-01

    We introduce the concept of using strained superlattice structures as defect filters, with their purpose to reduce the upwards propagation of dislocations that result from the lattice mismatch which occurs when III-V materials are grown on silicon substrates. Three samples with defect filter layers are grown on Si with and without in situ annealing and are compared to a similar structure grown on a GaAs substrate. Transmission electron microscopy is used to verify the effectiveness of the different designs grown on Si, with the twice-annealed sample reducing the number of defects present in the active region by 99.9%. Optical studies carried out exhibit brighter room temperature emission and reduced photoluminescence quenching with temperature in samples where annealing is performed. Photoluminescence excitation measurements reveal a ~20 meV redshift in the position of the GaAs exciton for the samples grown on Si compared to that of GaAs, indicating a residual inplane tensile strain ~0.35% in the GaAs of the active region for the samples grown on Si.

  9. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  10. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  11. Systematic approach for simultaneously correcting the band-gap andp-dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

    DOE PAGES

    Wang, Jianwei; Zhang, Yong; Wang, Lin-Wang

    2015-07-31

    We propose a systematic approach that can empirically correct three major errors typically found in a density functional theory (DFT) calculation within the local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds, (Ga or In)X with X = N,P,As,Sb, and II-VI compounds, (Zn or Cd)X, with X = O,S,Se,Te. By correcting (1) the binary band gaps at high-symmetry points , L, X, (2) the separation of p-and d-orbital-derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA-based quasi-first-principles methodmore » can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems, much needed for material discovery and design.« less

  12. Density functional theory calculations of III-N based semiconductors with mBJLDA

    NASA Astrophysics Data System (ADS)

    Gürel, Hikmet Hakan; Akıncı, Özden; Ünlü, Hilmi

    2017-02-01

    In this work, we present first principles calculations based on a full potential linear augmented plane-wave method (FP-LAPW) to calculate structural and electronic properties of III-V based nitrides such as GaN, AlN, InN in a zinc-blende cubic structure. First principles calculation using the local density approximation (LDA) and generalized gradient approximation (GGA) underestimate the band gap. We proposed a new potential called modified Becke-Johnson local density approximation (MBJLDA) that combines modified Becke-Johnson exchange potential and the LDA correlation potential to get better band gap results compared to experiment. We compared various exchange-correlation potentials (LSDA, GGA, HSE, and MBJLDA) to determine band gaps and structural properties of semiconductors. We show that using MBJLDA density potential gives a better agreement with experimental data for band gaps III-V nitrides based semiconductors.

  13. Silicon superlattices: Theory and application to semiconductor devices

    NASA Technical Reports Server (NTRS)

    Moriarty, J. A.

    1981-01-01

    Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

  14. Simulation of magnetic hysteresis loops and magnetic Barkhausen noise of α-iron containing nonmagnetic particles

    SciTech Connect

    Li, Yi; Xu, Ben; Hu, Shenyang Y.; Li, Yulan; Li, Qiulin; Liu, Wei

    2015-09-25

    Hysteresis loops and Magnetic Barkhausen Noise in a single crystal α-iron containing a nonmagnetic particle were simulated based on the Laudau-Lifshitz-Gilbert equation. The analyses of domain morphologies and hysteresis loops show that reversal magnetization process is control by nucleation of reversed domains at nonmagnetic particle when the particle size reaches a particle value. In such a situation, the value of nucleation field is determined by the size of nonmagnetic particles, and moreover, coercive field and Magnetic Barkhausen Noise signal are strongly affected by the nucleation field of reversed domains.

  15. Colloidal self assembly of non-magnetic particles in magnetic nanofluid

    SciTech Connect

    Jadav, Mudra; Patel, Rajesh E-mail: rpat7@yahoo.co

    2015-06-24

    Here we present a technique using magnetic nanofluid to induce bidispersed suspension of nonmagnetic particles to assemble into colloidal chain, triangle, rectangle, ring-flower configurations. By changing the amplitude and direction of the magnetic field, we could tune the structure of nonmagnetic particles in magnetic nanofluid. The structures are assembled using magneto static interactions between effectively nonmagnetic particles dispersed in magnetizable magnetic nanofluid. The assembly of complex structures out of simple colloidal building blocks is of practical interest in photonic crystals and DNA biosensors.

  16. Colloidal self assembly of non-magnetic particles in magnetic nanofluid

    NASA Astrophysics Data System (ADS)

    Jadav, Mudra; Patel, Rajesh

    2015-06-01

    Here we present a technique using magnetic nanofluid to induce bidispersed suspension of nonmagnetic particles to assemble into colloidal chain, triangle, rectangle, ring-flower configurations. By changing the amplitude and direction of the magnetic field, we could tune the structure of nonmagnetic particles in magnetic nanofluid. The structures are assembled using magneto static interactions between effectively nonmagnetic particles dispersed in magnetizable magnetic nanofluid. The assembly of complex structures out of simple colloidal building blocks is of practical interest in photonic crystals and DNA biosensors.

  17. Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy

    DTIC Science & Technology

    2013-01-01

    not usually detectable by the standard (004) x-ray diffraction (XRD) measurements typically used as a simple measurement of film quality. 15. SUBJECT...as a simple measurement of film quality. 2. Motivation and Army Interest One common example of ordering seen in many semiconductor alloys is copper...this will provide a III-V analog to direct bandgap mercury cadmium telluride (HgCdTe), with the benefits of higher quantum efficiencies (QEs) and

  18. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang

    2015-07-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III-V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III-V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III-V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components.

  19. Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

    NASA Technical Reports Server (NTRS)

    Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

    2002-01-01

    Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

  20. Soil attenuation of As(III, V) and Se(IV, VI) seepage potential at ash disposal facilities.

    PubMed

    Hyun, Seunghun; Lee, Linda S

    2013-11-01

    Leachate from ash landfills is frequently enriched with As and Se but their off-site movement is not well understood. The attenuation potential of As and Se by soils surrounding selected landfills during leachate seepage was investigated in laboratory column studies using simulated ash leachate. As(III, V) and Se(IV, VI) concentrations as well as pH, flow rate, and a tracer were monitored in influent and effluent for up to 800 pore volumes followed by sequential desorption, extraction, and digestion of column segments. Column breakthrough curves (BTCs) were compared to predictions based on previously measured sorption isotherms. Early As(V) breakthrough and retarded As(III) breakthrough relative to predicted BTCs are indicative of oxidative transformation during seepage. For Se(VI), which exhibits linear sorption and the lowest sorption propensity, measured BTCs were predicted fairly well by equilibrium sorption isotherms, except for the early arrival of Se(IV) in one site soil, which in part, may be due to higher column pH values compared to batch isotherms. Most of the As and Se retained by soils during leaching was found to be strongly sorbed (60-90%) or irreversibly bound (10-40%) with <5% readily desorbable. Redox potential favoring transformation to the more sorptive valence states of As(V) and Se(IV) will invoke additional attenuation beyond equilibrium sorption-based predictions. With the exception of Se(IV) on one site soil, results indicate that attenuation by down-gradient soils of As and Se in ash landfill seepage will often be no less than what is predicted by equilibrium sorption capacity with further attenuation expected due to favorable redox transformation processes, thus mitigating contaminant plumes and associated risks.

  1. Quantum anomalous Hall effect in stanene on a nonmagnetic substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Huisheng; Zhou, Tong; Zhang, Jiayong; Zhao, Bao; Yao, Yugui; Yang, Zhongqin

    2016-12-01

    Since the quantum anomalous Hall (QAH) effect was realized in magnetic topological insulators, research on the effect has become a hot topic. The very harsh realizing requirements of the effect in experiments, however, hinder its practical applications. Based on ab initio methods, we find that nonmagnetic Pb I2 films are ideal substrates for the two-dimensional honeycomb stanene. The QAH effect with a pretty large band gap (up to 90 meV) can be achieved in the functionalized stanene /Pb I2 heterostructure. Despite van der Waals interactions in the heterostructure, band inversions are found to be happening between Sn (s and px ,y ) and Pb (px ,y) orbitals, playing a key role in determining the nontrivial topology and the large band gap of the system. Having no magnetic atoms is imperative to triggering the QAH effect. A very stable rudimentary device having QAH effects is proposed based on the Sn /Pb I2 heterostructure. Our results demonstrate that QAH effects can be easily realized in the Sn /Pb I2 heterostructures in experiments.

  2. Disentangling the spin torques in a ferromagnet/semiconductor bilayer

    NASA Astrophysics Data System (ADS)

    Skinner, Timothy D.; Olejnik, Kamil; Cunningham, Lucy K.; Kurebayashi, Hidekazu; Campion, Richard P.; Gallagher, Bryan L.; Jungwirth, Tomas; Ferguson, Andrew J.

    2015-03-01

    Current-induced spin torques measured in ferromagnet/paramagnetic metal bilayers can originate from the spin-Hall effect (SHE) and inverse spin galvanic effect (ISGE). Distinguishing the two effects has proved difficult as they can both possess the same symmetries, but it is essential for our basic physical understanding of the spin torques at the ferromagnet/paramagnet interface to experimentally disentangle the SHE and ISGE contributions. In our approach, we look to zinc-blende crystals (such as III-V semiconductors), where the ISGE has a symmetry which depends on the crystal orientation. The field-like and antidamping torques, arising from the ISGE in the magnetic III-V semiconductor (Ga,Mn)As, are well understood because of low-temperature spin-torque ferromagnetic resonance (ST-FMR) measurements. Through new ST-FMR measurements, we show that in a room-temperature ferromagnetic metal/paramagnetic semiconductor bilayer, the SHE and ISGE co-exist and can be unambiguously separated and quantified by their symmetries.

  3. EDITORIAL: The 21st Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    2006-09-01

    This Topical Issue contains works presented at the 21st Nordic Semiconductor Meeting (21NSM) held at Sundvolden, Norway, 18-19 August 2005. The institutions supporting 21NSM were: University of Oslo, SINTEF, the Norwegian Defense Research Establishment and Vestfold University College. The Nordic Semiconductor Meeting has become an international forum that has been held every other year in a relay fashion in Denmark, Finland, Iceland, Norway and Sweden. The focus of the meeting has been on original research and science being carried out on semiconductor materials, devices and systems. Reports on industrial activity have usually been featured at the meetings. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. For the last five meetings the proceedings have been printed in a dedicated volume of Physica Scripta in the Topical Issue series. The papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the expected high standards of the series. The range of topics covered by this volume is broad, reflecting the call for papers; most of the papers have an element of materials science and the largest portion of these deal with other semiconductor materials other than silicon. The 21NSM was supported by the following sponsors: Renewable Energy Corporation (REC), EMF III-V Innovations (EMF), and the Nordic Research Board (NordForsk). Terje G Finstad Department of Physics, University of Oslo, Norway Andrej Y Kuznetsov and Bengt G Svensson Centre for Materials Science and Nanotechnology, University of Oslo, Norway

  4. Vacancy formation and extraction energies in semiconductor compounds and alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.

    1990-01-01

    A model for calculating the extraction energies and vacancy-formation energies in diamond-cubic and zinc-blende semiconductors is developed on the basis of Harrison's (1980, 1983) tight-binding theory. The extraction energies provide a reference from which other final states of the removed atoms can be calculated. The results of calculations show that, in a given compound, the calculated extraction energies are larger for the anion than for the cation, with the difference between the cation and the anion being larger in the II-VI than in the III-V compounds. This is in agreement with experimental results.

  5. First principles DFT study of ferromagnetism in SnO{sub 2} induced by doped group 1A and 2A non-magnetic elements X (X=Li, Na, K, Be, Mg, Ca)

    SciTech Connect

    Chakraborty, Brahmananda Ramaniah, Lavanya M.

    2014-04-24

    Transition metal - free - ferromagnetism in diluted magnetic semiconductors (DMS) is of much current interest in the search for more efficient DMS materials for spintronic applications. Here, we report the results of our first principles density functional theory (DFT) study on impurity - induced ferromagnetism in non-magnetic SnO{sub 2} by a non-magnetic impurity. The impurities considered are sp-type of group 1A and 2A elements X (X = Li, Na, K, Be, Mg, Ca). Even a single atom of the group 1A elements makes the system magnetic, whereas for the group 2A elements Ca and Mg, a higher doping is required to induce ferromagnetism. For all the elements studied, the magnetic moment appears to increase with the doping concentration, at least at certain impurity separations, which is a positive indicator for practical applications.

  6. Plasma, magnetic, and electromagnetic measurements at nonmagnetic bodies

    NASA Technical Reports Server (NTRS)

    Russell, C. T.; Luhmann, J. G.

    1993-01-01

    The need to explore the magnetospheres of the Earth and the giant planets is widely recognized and is an integral part of our planetary exploration program. The equal need to explore the plasma, magnetic, and electromagnetic environments of the nonmagnetic bodies is not so widely appreciated. The previous, albeit incomplete, magnetic and electric field measurements at Venus, Mars, and comets have proven critical to our understanding of their atmospheres and ionospheres in areas ranging from planetary lightning to solar wind scavenging and accretion. In the cases of Venus and Mars, the ionospheres can provide communication paths over the horizon for low-altitude probes and landers, but we know little about their lower boundaries. The expected varying magnetic fields below these planetary ionospheres penetrates the planetary crusts and can be used to sound the electrical conductivity and the thermal profiles of the interiors. However, we have no knowledge of the levels of such fields, let alone their morphology. Finally, we note that the absence of an atmosphere and an ionosphere does not make an object any less interesting for the purposes of electromagnetic exploration. Even weak remanent magnetism such as that found on the Moon during the Apollo program provides insight into the present and past states of planetary interiors. We have very intriguing data from our space probes during times of both close and distant passages of asteroids that suggest they may have coherent magnetization. If true, this observation will put important constraints on how the asteroids formed and have evolved. Our planetary exploration program must exploit its full range of exploration tools if it is to characterize the bodies of the solar system thoroughly. We should especially take advantage of those techniques that are proven and require low mass, low power, and low telemetry rates to undertake.

  7. 30 CFR 57.22234 - Actions at 1.0 percent methane (I-A, I-B, III, V-A, and V-B mines).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Actions at 1.0 percent methane (I-A, I-B, III...-UNDERGROUND METAL AND NONMETAL MINES Safety Standards for Methane in Metal and Nonmetal Mines Ventilation § 57.22234 Actions at 1.0 percent methane (I-A, I-B, III, V-A, and V-B mines). (a) If methane reaches...

  8. 30 CFR 57.22234 - Actions at 1.0 percent methane (I-A, I-B, III, V-A, and V-B mines).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Actions at 1.0 percent methane (I-A, I-B, III...-UNDERGROUND METAL AND NONMETAL MINES Safety Standards for Methane in Metal and Nonmetal Mines Ventilation § 57.22234 Actions at 1.0 percent methane (I-A, I-B, III, V-A, and V-B mines). (a) If methane reaches...

  9. Scanning of magnetic space groups and the analysis of non-magnetic domain walls.

    PubMed

    Janovec, V; Litvin, D B

    2007-09-01

    Similarly to atomic positions in a crystal being fixed, or at least constrained by the space group of that crystal, the displacements of atoms in a domain wall are determined or constrained by the symmetry of the wall given by the sectional layer group of the corresponding domain pair. The sectional layer group can be interpreted as comprised of operations that leave invariant a plane transecting two overlapping structures, the domain states of the two domains adhering to the domain wall. The procedure of determining the sectional layer groups for all orientations and positions of a transecting plane is called scanning of the space group. Scanning of non-magnetic space groups has been described and tabulated. It is shown here that the scanning of magnetic groups can be determined from that of non-magnetic groups. The information provided by scanning of magnetic space groups can be utilized in the symmetry analysis of domain walls in non-magnetic crystals since, for any dichromatic space group, which expresses the symmetry of overlapped structures of two non-magnetic domains, there exists an isomorphic magnetic space group. Consequently, a sectional layer group of a magnetic space group expresses the symmetry of a non-magnetic domain wall. Examples of this are given in the symmetry analysis of ferroelectric domain walls in non-magnetic perovskites.

  10. Approaches toward a blue semiconductor laser

    NASA Technical Reports Server (NTRS)

    Ladany, I.

    1989-01-01

    Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

  11. Semiconductor nanostructure properties. Molecular Dynamic Simulations

    NASA Astrophysics Data System (ADS)

    Podolska, N. I.; Zhmakin, A. I.

    2013-08-01

    The need for research is based on the fact that development of non-planar semiconductor nanosystems and nanomaterials with controlled properties is an important scientific and industrial problem. So, final scientific and technological problem is the creation of adequate modern methods and software for growth and properties simulation and optimization of various III-V (GaAs, InAs, InP, InGaAs etc.) nanostructures (e.g. nanowires) with controlled surface morphology, crystal structure, optical, transport properties etc. Accordingly, now we are developing a specialized computer code for atomistic simulation of structural (distribution of atoms and impurities, elastic and force constants, strain distribution etc.) and thermodynamic (mixing energy, interaction energy, surface energy etc.) properties of the nanostructures. Some simulation results are shown too.

  12. Intrinsic DX Centers in Ternary Chalcopyrite Semiconductors

    SciTech Connect

    Lany, S.; Zunger, A.

    2008-01-01

    In III-V and II-VI semiconductors, certain nominally electron-donating impurities do not release electrons but instead form deep electron-traps known as 'DX centers.' While in these compounds, such traps occur only after the introduction of foreign impurity atoms, we find from first-principles calculations that in ternary I-III-VI{sub 2} chalcopyrites like CuInSe{sub 2} and CuGaSe{sub 2}, DX-like centers can develop without the presence of any extrinsic impurities. These intrinsic DX centers are suggested as a cause of the difficulties to maintain high efficiencies in CuInSe{sub 2}-based thin-film solar-cells when the band gap is increased by addition of Ga.

  13. Electron states in semiconductor quantum dots

    SciTech Connect

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  14. Increased bismuth concentration in MBE GaAs{sub 1−x}Bi{sub x} films by oscillating III/V flux ratio during growth

    SciTech Connect

    Wood, Adam W. Babcock, Susan E.; Li, Jincheng; Brown, April S.

    2015-05-15

    The authors have examined bismuth concentration profiles in GaAs{sub 1−x}Bi{sub x} films grown by molecular beam epitaxy using high angle annular dark field imaging (Z-contrast imaging) in an aberration-corrected scanning transmission electron microscope in conjunction with x-ray diffraction. Samples were grown with a gradient in each of the component fluxes, and therefore, the III/V ratio across the substrate. Rotating the sample during growth exposed the growth surface to an oscillating III/V flux ratio. Sinusoidal [Bi] profiles resulted in the growth direction, the wavelength and number of which were consistent with the growth rate and the rate of substrate rotation. However, the magnitude of [Bi] in the observed fluctuations was greater than the maximum [Bi] achieved using the same Bi flux and Ga/As flux ratios in steady-state conditions on a stationary substrate, suggesting that varying the III/V flux ratio during growth promotes the incorporation of Bi in GaAs{sub 1−x}Bi{sub x} films. A proposed qualitative model for how this enhancement might occur hypothesizes a critical role for alternating growth and shrinkage of Ga-Bi predroplet clusters on the surface as the growing material is rotated through Ga-rich and As-rich flux compositions.

  15. Enhanced second harmonic generation in coupled semiconductor whispering gallery mode microresonators

    NASA Astrophysics Data System (ADS)

    Dumeige, Yannick

    2009-02-01

    It has been shown that doubly resonant microcavities can be used to obtain miniaturized parametric devices leading for example to efficient second-harmonic generation (SHG). First we will briefly recall the basic properties of SHG in III-V semiconductor whispering gallery mode microdisks or microrings. Then we will show theoretically that by coupling such microresonators and by using the artificial dispersion of a side-coupled integrated spaced sequence of resonators (SCISSOR) it is possible to adapt the Fresnel phase-matching technique to the case of highly confining waveguides or to enhance the second order nonlinear properties of a semiconductor waveguide by slowing fundamental and second-harmonic waves.

  16. Design considerations for semiconductor nanowire-plasmonic nanoparticle coupled systems for high quantum efficiency nanowires.

    PubMed

    Mokkapati, Sudha; Saxena, Dhruv; Tan, Hark Hoe; Jagadish, Chennupati

    2013-12-09

    The optimal geometries for reducing the radiative recombination lifetime and thus enhancing the quantum efficiency of III-V semiconductor nanowires by coupling them to plasmonic nanoparticles are established. The quantum efficiency enhancement factor due to coupling to plasmonic nanoparticles reduces as the initial quality of the nanowire increases. Significant quantum efficiency enhancement is observed for semiconductors only within about 15 nm from the nanoparticle. It is also identified that the modes responsible for resonant enhancement in the quantum efficiency of an emitter in the nanowire are geometric resonances of surface plasmon polariton modes supported at the nanowire/nanoparticle interface.

  17. Optimization and Characterization of Indium Arsenide Quantum Dots for Application in III-V Material Solar Cells

    NASA Astrophysics Data System (ADS)

    Podell, Adam P.

    In this work, InAs quantum dots grown by organometallic vapor-phase epitaxy (OMVPE) are investigated for application in III - V material solar cells. The first focus is on the opti- mization of growth parameters to produce high densities of uniform defect-free quantum dots via growth on 2" vicinal GaAs substrates. Parameters studied are InAs coverage, V/III ratio and growth rate. QDs are grown by the Stranski-Krastanov (SK) growth mode on (100) GaAs substrates misoriented toward (110) or (111) planes with various degrees of misorientation from 0° to 6°. Atomic force microscopy results indicated that as misorientation angle increased toward(110),critical thickness for quantum dot formation increased with theta c =1.8ML,1.9ML and 2.0 ML corresponding to 0°, 2° and 6°, respectively. Results for quantum dots grown on (111) misoriented substrates indicated, on average, that higher densities of quantum dots were achieved, compared with similar growths on substrates misoriented toward (110). Most notably, a stable average number density of 8 x 1010cm -2 was observed over a range of growth rates of 0.1ML/s - 0.4ML/s on (111) misoriented substrates compared with a decreasing number density as low as 2.85 x 1010cm -2 corresponding to a growth rate of 0.4ML/s grown on (110) misoriented substrates. p-i-n solar cell devices with a 10-layer quantum dot super- lattice imbedded in the i-region were also grown on (100) GaAs substrates misoriented 0°, 2° and 6° toward (110) as well as a set of devices grown on substrates misoriented toward (111). Device results showed a 1.0mA/cm2 enhancement to the short-circuit current for a v 2° misoriented device with 2.2 ML InAs coverage per quantum dot layer. Spectral response measurements were performed and integrated spectral response showed sub-GaAs bandgap short-circuit contribution which increased with increasing InAs coverage in the quantum dot layers from 0.04mA/cm2/ML, 0.28mA/cm2/ ML and 0.19mA/cm2/ML corresponding to 0°, 2

  18. Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

    PubMed

    Palit, Sabarni; Kirch, Jeremy; Huang, Mengyuan; Mawst, Luke; Jokerst, Nan Marie

    2010-10-15

    A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

  19. Lighting market alchemy: Will we find a pot of gold at the end of the III-V rainbow?

    NASA Astrophysics Data System (ADS)

    Conway, Kathryn M.

    2004-12-01

    With a focus on visible spectrum light emitting diodes (LEDs), three questions frame this update. First, what are the market and financial outlooks for light-producing compound semiconductor materials and devices? Second, which applications offer the greatest growth potential for the next five to ten years and with which technologies will they likely compete for market share? Third, how can photonics experts contribute to accelerated successes for LEDs and other solid-state lighting technologies such as quantum dots? Using the rainbow as a metaphor for the market, the author examines developments in single color, multiple color and "white light" products.

  20. Progress in nonmagnetic impurity doping studies on Fe-based superconductors

    NASA Astrophysics Data System (ADS)

    Li, Jun; Guo, Yan-Feng; Yang, Zhao-Rong; Yamaura, Kazunari; Takayama-Muromachi, Eiji; Wang, Hua-Bing; Wu, Pei-Heng

    2016-05-01

    We review the progress of nonmagnetic impurity doping studies on Fe-based superconductors. On the theoretical side, two highly promising candidates for the pairing symmetry order parameter, i.e. the multi-gap s ++ and s ± wave models, have been proposed but continuously debated. The debate arises because of the complex gap structure and exceptional magnetic and metallic behaviors of Fe-based superconductors, which may vary the influence of nonmagnetic defects in the chemical potential, impurity disorder, inter- and intra-band scattering strength, and electron localization. This creates difficulties in directly obtaining the most important information for understanding the symmetry order parameter. Experimentally, nonmagnetic impurity substitution studies have been widely carried out, which have provided very useful insights. We review herein the various nonmagnetic impurity doping experiments, including the controlled defects within the superconducting Fe2 X 2 planes through sample quality improvement, single impurity effects on the electronic state and local moment, the magnetic response of the Fe2 X 2 planes both on the macroscopic scale as the antiferromagnetic state and the local scale of moment, as well as the significant effect of modifying the transport properties. The experiments enable us to qualitatively analyze the nonmagnetic impurity effects on the superconducting state for many Fe-based superconductors. We also propose herein some strategies for nonmagnetic impurity doping study. As an important model for explaining the nonmagnetic impurity doping effects, the pair-breaking model is compared with various theoretical approaches via analysis of the pair-breaking rates of various Fe-superconductors.

  1. Replacement of hydrides by TBAs and TBP for the growth of various III V materials in production scale MOVPE reactors

    NASA Astrophysics Data System (ADS)

    Beccard, R.; Lengeling, G.; Schmitz, D.; Gigase, Y.; Jürgensen, H.

    1997-01-01

    Besides the standard group V precursors AsH 3 and PH 3, so-called alternative precursors like TBAs and TBP (tertiary-butyl-arsine and tertiary-butyl-phosphine) are more and more important in today's MOVPE processes. A lot of publications have demonstrated that these precursors can be successfully used for the growth of different III-V materials. In this study we want to demonstrate that TBAs and TBP can be used as the group V precursor in a complete family of production scale reactors. It is shown that these precursors can be used for the growth of InP-based as well as for GaAs-based materials. The reactors that have been employed are medium scale reactors (AIX 200/4; 1 × 2 inch, 3 or 4 inch or 3 × 2 inch capability) and large scale Planetary Reactors®, in particular the AIX 2400 system (15 × 2 inch or 5 × 4 inch). Materials that have been grown are (Al)GaInP on GaAs and GaInAsP on InP. The lower cracking energy of these precursors compared to PH 3 and AsH 3 allows one to use lower growth temperatures and lower {V}/{III} ratios, particularly in combination with the high cracking efficiencies of the used reactors. For the growth of GaInAsP on InP, the consumption of TBP and TBAs is up to 8 times lower than using PH 3 and AsH 3. GaInP on GaAs could be grown with a {V}/{III} ratio as low as 25 in a Planetary Reactor®. Good crystalline quality is demonstrated by DCXD (e.g. for GaInP: FWHM = 35 arcsec, substrate 32 arcsec). PL intensity and growth rate are not affected by using the alternative precursors. The compositional uniformity is similar to layers grown with arsine and phosphine (e.g. 1.5 nm uniformity for GaInAsP ( λ = 1.5 μm) on 2 inch; approximately 1 nm uniformity for GaInP) [1,2]. The purity of the grown layers depends mainly on the quality of the TBP and TBAs. Using high purity TBP, InP revealed background carrier concentration in the mid 10 14 cm -3 regime. Our investigation shows that TBP and TBAs can replace phosphine and arsine in state of the

  2. Local destruction of superconductivity by non-magnetic impurities in mesoscopic iron-based superconductors

    PubMed Central

    Li, Jun; Ji, Min; Schwarz, Tobias; Ke, Xiaoxing; Van Tendeloo, Gustaaf; Yuan, Jie; Pereira, Paulo J.; Huang, Ya; Zhang, Gufei; Feng, Hai-Luke; Yuan, Ya-Hua; Hatano, Takeshi; Kleiner, Reinhold; Koelle, Dieter; Chibotaru, Liviu F.; Yamaura, Kazunari; Wang, Hua-Bing; Wu, Pei-Heng; Takayama-Muromachi, Eiji; Vanacken, Johan; Moshchalkov, Victor V.

    2015-01-01

    The determination of the pairing symmetry is one of the most crucial issues for the iron-based superconductors, for which various scenarios are discussed controversially. Non-magnetic impurity substitution is one of the most promising approaches to address the issue, because the pair-breaking mechanism from the non-magnetic impurities should be different for various models. Previous substitution experiments demonstrated that the non-magnetic zinc can suppress the superconductivity of various iron-based superconductors. Here we demonstrate the local destruction of superconductivity by non-magnetic zinc impurities in Ba0.5K0.5Fe2As2 by exploring phase-slip phenomena in a mesoscopic structure with 119 × 102 nm2 cross-section. The impurities suppress superconductivity in a three-dimensional ‘Swiss cheese'-like pattern with in-plane and out-of-plane characteristic lengths slightly below ∼1.34 nm. This causes the superconducting order parameter to vary along abundant narrow channels with effective cross-section of a few square nanometres. The local destruction of superconductivity can be related to Cooper pair breaking by non-magnetic impurities. PMID:26139568

  3. Local destruction of superconductivity by non-magnetic impurities in mesoscopic iron-based superconductors.

    PubMed

    Li, Jun; Ji, Min; Schwarz, Tobias; Ke, Xiaoxing; Van Tendeloo, Gustaaf; Yuan, Jie; Pereira, Paulo J; Huang, Ya; Zhang, Gufei; Feng, Hai-Luke; Yuan, Ya-Hua; Hatano, Takeshi; Kleiner, Reinhold; Koelle, Dieter; Chibotaru, Liviu F; Yamaura, Kazunari; Wang, Hua-Bing; Wu, Pei-Heng; Takayama-Muromachi, Eiji; Vanacken, Johan; Moshchalkov, Victor V

    2015-07-03

    The determination of the pairing symmetry is one of the most crucial issues for the iron-based superconductors, for which various scenarios are discussed controversially. Non-magnetic impurity substitution is one of the most promising approaches to address the issue, because the pair-breaking mechanism from the non-magnetic impurities should be different for various models. Previous substitution experiments demonstrated that the non-magnetic zinc can suppress the superconductivity of various iron-based superconductors. Here we demonstrate the local destruction of superconductivity by non-magnetic zinc impurities in Ba0.5K0.5Fe2As2 by exploring phase-slip phenomena in a mesoscopic structure with 119 × 102 nm(2) cross-section. The impurities suppress superconductivity in a three-dimensional 'Swiss cheese'-like pattern with in-plane and out-of-plane characteristic lengths slightly below ∼1.34 nm. This causes the superconducting order parameter to vary along abundant narrow channels with effective cross-section of a few square nanometres. The local destruction of superconductivity can be related to Cooper pair breaking by non-magnetic impurities.

  4. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.; Miller, W. E.

    1988-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys InPBi, InAsBi, and InSbBi were studied theoretically. Bond energies, bond lengths, and strain coefficients were calculated for pure AlBi, GaBi, and InBi compounds and their alloys, and predictions were made for the mixing enthalpies, miscibility gaps, and critical metastable-to-stable material transition temperatures. Miscibility calculations indicate that InSbBi will be the most miscible, and the InPBi will be the the most difficult to mix. However, calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe.

  5. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    PubMed

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology.

  6. Ultralow-power all-optical wavelength conversion in a silicon-on-insulator waveguide based on a heterogeneously integrated III-V microdisk laser

    NASA Astrophysics Data System (ADS)

    Liu, Liu; Van Campenhout, Joris; Roelkens, Günther; Van Thourhout, Dries; Rojo-Romeo, Pedro; Regreny, Philippe; Seassal, Christian; Fédéli, Jean-Marc; Baets, Roel

    2008-08-01

    Ultralow-power all-optical wavelength conversion is presented for a silicon-on-insulator wire waveguide with a heterogeneously integrated III-V microdisk laser. The principle relies on the suppression of natural lasing from the microdisk laser by an external injection. No probe beam is needed in this configuration. Static wavelength conversion with a control power of 6.4 μW or even lower is achieved. The resonance and gain provided by the microdisk cavity are at the origin of such low control power. Dynamically, wavelength conversion using a 5 Gbps non-return-to-zero bit sequence is demonstrated in the proposed device.

  7. Detection of soft X-rays with NEA III-V photocathodes. [Negative Electron Affinity X-ray detector for astronomy

    NASA Technical Reports Server (NTRS)

    Bardas, D.; Kellogg, E.; Murray, S.; Enck, R., Jr.

    1978-01-01

    A description is presented of the results of tests on an X-ray photomultiplier containing a negative electron affinity (NEA) photocathode. This device makes it possible to investigate the response of the NEA photocathode to X-rays of various energies. The obtained data provide a basis for the determination of the photoelectron yield and energy resolution of the considered photocathode as a function of energy in the range from 0.8 to 3 keV. The investigation demonstrates the feasibility of using an NEA III-V photocathode for the detection of soft X-rays.

  8. Improvement of microwave magnetic properties by inserting nonmagnetic layer

    NASA Astrophysics Data System (ADS)

    Li, Xiaoting; An, Chao; Wang, Zhen; Xu, Chunlong; Shi, Gang; Wang, Jinguo; Hou, Zhaoyang; Xi, Li

    2017-01-01

    Co/NM (nonmagnetic Ag and SiO2)/Co sandwich structure films with different thicknesses of NM were fabricated on Si(111) substrate via oblique radio frequency sputtering. With increasing thickness of nonmagnetic Ag (tAg), in-plane magnetic anisotropy field Hk initially increased from 100 Oe of tAg = 0 nm to 220 Oe of tAg = 1.5 nm, and then decreased when tAg > 1.5 nm. Resonance frequency showed the same tendency with maximum 5.2 GHz when tAg = 1.5 nm. Damp factor increased from 0.02 for tAg = 0-0.08 for tAg = 2.0 nm. The same result was observed in inserting oxide nonmagnetic SiO2 layer. This can be attributed to the competition between interface energy and exchange coupling energy.

  9. Simulation of magnetic hysteresis loops and magnetic Barkhausen noise of α-iron containing nonmagnetic particles

    SciTech Connect

    Li, Yi; Li, Qiulin; Liu, Wei; Xu, Ben; Hu, Shenyang; Li, Yulan

    2015-07-15

    The magnetic hysteresis loops and Barkhausen noise of a single α-iron with nonmagnetic particles are simulated to investigate into the magnetic hardening due to Cu-rich precipitates in irradiated reactor pressure vessel (RPV) steels. Phase field method basing Landau-Lifshitz-Gilbert (LLG) equation is used for this simulation. The results show that the presence of the nonmagnetic particle could result in magnetic hardening by making the nucleation of reversed domains difficult. The coercive field is found to increase, while the intensity of Barkhausen noise voltage is decreased when the nonmagnetic particle is introduced. Simulations demonstrate the impact of nucleation field of reversed domains on the magnetization reversal behavior and the magnetic properties.

  10. Simulation of magnetic hysteresis loops and magnetic Barkhausen noise of α-iron containing nonmagnetic particles

    SciTech Connect

    Li, Yi; Xu, Ben; Hu, Shenyang; Li, Yulan; Li, Qiulin; Liu, Wei

    2015-07-01

    The magnetic hysteresis loops and Barkhausen noise of a single α-iron with nonmagnetic particles are simulated to investigate into the magnetic hardening due to Cu-rich precipitates in irradiated reactor pressure vessel (RPV) steels. Phase field method basing Landau-Lifshitz-Gilbert (LLG) equation is used for this simulation. The results show that the presence of the nonmagnetic particle could result in magnetic hardening by making the nucleation of reversed domains difficult. The coercive field is found to increase, while the intensity of Barkhausen noise voltage is decreased when the nonmagnetic particle is introduced. Simulations demonstrate the impact of nucleation field of reversed domains on the magnetization reversal behavior and the magnetic properties.

  11. Simulation of magnetic hysteresis loops and magnetic Barkhausen noise of α-iron containing nonmagnetic particles

    DOE PAGES

    Li, Yi; Xu, Ben; Hu, Shenyang; ...

    2015-07-01

    The magnetic hysteresis loops and Barkhausen noise of a single α-iron with nonmagnetic particles are simulated to investigate into the magnetic hardening due to Cu-rich precipitates in irradiated reactor pressure vessel (RPV) steels. Phase field method basing Landau-Lifshitz-Gilbert (LLG) equation is used for this simulation. The results show that the presence of the nonmagnetic particle could result in magnetic hardening by making the nucleation of reversed domains difficult. The coercive field is found to increase, while the intensity of Barkhausen noise voltage is decreased when the nonmagnetic particle is introduced. Simulations demonstrate the impact of nucleation field of reversed domainsmore » on the magnetization reversal behavior and the magnetic properties.« less

  12. Magnetic Hardening from the Suppression of Domain Walls by Nonmagnetic Particles

    SciTech Connect

    Hu, Shenyang Y.; Li, Yulan; McCloy, John S.; Montgomery, Robert O.; Henager, Charles H.

    2013-03-07

    Magnetic domain switching and hysteresis loops in a single crystal α-iron with and without nonmagnetic particles were simulated based on the magnetization dynamics of the Landau–Lifshitz–Gilbert equation. It is found that the 360o Bloch domain wall is the easiest nucleation site for an anti-direction domain. The nucleation occurs by splitting the 360o Bloch domain wall into two 180o domain walls. However, the existence of nonmagnetic particles destroys the 180o domain walls and prevents the formation of 360o Bloch domain walls. Simulation results demonstrate that the impact of nonmagnetic particle on the formation of the 360o Bloch domain wall is a magnetic hardening mechanism.

  13. Magnetic properties and nonmagnetic phases formation in (Fe/Si)n films

    NASA Astrophysics Data System (ADS)

    Varnakov, S. N.; Komogortsev, S. V.; Ovchinnikov, S. G.; Bartolomé, J.; Sesé, J.

    2008-11-01

    The magnetization of Fe/Si multilayers, grown by thermal evaporation in an ultrahigh vacuum system, was investigated at high temperatures. Magnetization and its temperature dependence up to a high temperature of 800 K depend on individual Fe layer thickness dFe. This dependence is the result of the formation of an Fe-Si interface layer (nonmagnetic phase) during the synthetic procedure. The fraction of this Fe-Si nonmagnetic phase is estimated versus dFe. At temperatures higher than 400 K an irreversible decrease in the magnetization occurs. A quantitative analysis of this irreversible behavior is proposed in terms of an exponential diffusion-like kinetic equation for the reaction that produces the Fe-Si nonmagnetic phase. The coefficients of the rate equation are the activation energy Ea and the prefactor D0, which have been determined for different dFe.

  14. Application of quaternary phase diagrams to compound semiconductor processing

    SciTech Connect

    Sinclair, R.

    1994-10-01

    Isobaric, isothermal phase diagrams are a molar representation of condensed phases in equilibrium with each other at a fixed temperature, pressure, and composition. Since three or four elements are usually involved at a fabricated interface in a semiconductor device, knowledge of the appropriate ternary or quaternary phase diagram is important for optimizing the processing parameters and designing long term stability of devices. While the use of phase diagrams is well-established in the fields of metallurgy, ceramics and mineralogy, only recently have phase diagrams been employed to provide a framework for understanding thin film reactions on a substrate, encountered in semiconductor processing. Even though there are many examples of applications of ternary phase diagrams in the semiconductor literature (for instance, metallization of GaAs, the use of refractory metal silicides for metallization layers in VLSI devices and oxidation of III-V compounds), the same is not true for quaternary phase diagrams. To date, the only application is oxidation of mercury cadmium telluride. This lack of examples is not warranted, as four elements are often involved at a critical interface in compound semiconductor processing and devices. This paper reports on the progress made to remedy this situation by considering the application of quaternary phase diagrams to understanding and predicting the behavior of II-VI thin film interfaces in photovoltaic devices under annealing conditions. Moreover, for the first time, solid solubility is taken into account for quaternary phase diagrams of semiconductor systems.

  15. Magnetization Reversal Process of Single Crystal α-Fe Containing a Nonmagnetic Particle

    SciTech Connect

    Li, Yi; Xu, Ben; Hu, Shenyang Y.; Li, Yulan; Li, Qiu-Lin; Liu, Wei

    2015-09-25

    The magnetization reversal process and hysteresis loops in a single crystal α-iron with nonmagnetic particles are simulated in this work based on the Landau-Lifshitz–Gilbert equation. The evolutions of the magnetic domain morphology are studied, and our analyses show that the magnetization reversal process is affected by the interaction between the moving domain wall and the existing nonmagnetic particles. This interaction strongly depends on the size of the particles, and it is found that particles with a particular size contribute the most to magnetic hardening.

  16. Superconductivity in the non-magnetic state of iron under pressure.

    PubMed

    Shimizu, K; Kimura, T; Furomoto, S; Takeda, K; Kontani, K; Onuki, Y; Amaya, K

    2001-07-19

    Ferromagnetism and superconductivity are thought to compete in conventional superconductors, although in principle it is possible for any metal to become a superconductor in its non-magnetic state at a sufficiently low temperature. At pressures above 10 GPa, iron is known to transform to a non-magnetic structure and the possibility of superconductivity in this state has been predicted. Here we report that iron does indeed become superconducting at temperatures below 2 K at pressures between 15 and 30 GPa. The transition to the superconducting state is confirmed by both a drop in resistivity and observation of the Meissner effect.

  17. The space density of magnetic and non-magnetic cataclysmic variables, and implications for CV evolution

    NASA Astrophysics Data System (ADS)

    Pretorius, M.

    2014-07-01

    I will present estimates of the space densities of both non-magnetic and magnetic cataclysmic variables (CVs), based on X-ray flux-limited samples. The measurements can be used to address several questions relevant to the evolution of CVs and to the makeup of Galactic X-ray source populations. I will discuss the implications of these results for the high predicted space density of non-magnetic CVs, the evolutionary relationship between intermediate polars and polars, the fraction of CVs with strongly magnetic white dwarfs, and for the contribution of magnetic CVs to Galactic populations of hard X-ray sources.

  18. Development of a Non-Magnetic Inertial Sensor for Vibration Stabilization in a Linear Collider

    SciTech Connect

    Frisch, Josef; Decker, Valentin; Doyle, Eric; Hendrickson, Linda; Himel, Thomas; Markiewicz, Thomas; Seryi, Andrei; Chang, Allison; Partridge, Richard; /Brown U.

    2006-09-01

    One of the options for controlling vibration of the final focus magnets in a linear collider is to use active feedback based on accelerometers. While commercial geophysics sensors have noise performance that substantially exceeds the requirements for a linear collider, they are physically large, and cannot operate in the strong magnetic field of the detector. Conventional nonmagnetic sensors have excessive noise for this application. We report on the development of a non-magnetic inertial sensor, and on a novel commercial sensor both of which have demonstrated the required noise levels for this application.

  19. Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors

    NASA Astrophysics Data System (ADS)

    Zarpellon, J.; Jaffrès, H.; Frougier, J.; Deranlot, C.; George, J. M.; Mosca, D. H.; Lemaître, A.; Freimuth, F.; Duong, Quang Ha; Renucci, P.; Marie, X.

    2012-11-01

    We have studied the perpendicular magnetic anisotropy of Co/Pt multilayers and the electron spin injection efficiency by optical spectroscopy from a [Co(0.6 nm)/Pt(1 nm)]4/Fe(0.3 nm)/MgO perpendicular tunnel spin injector grown on AlGaAs/GaAs semiconductor light-emitting diodes. We observe a 2.5% circular polarization at low temperature close to the magnetic remanence when the 0.3 nm Fe film of the ferromagnetic injector is sufficiently thin to maintain the magnetization out of plane. The acquired squared magnetization cycle is explained by the remaining interlayer exchange coupling existing between Fe and the (Co/Pt) multilayer through Pt or possible perpendicular magnetic anisotropy at the MgO/Fe interface. The corresponding spin polarization of the current is then estimated as 7%, measured by photoluminescence techniques, after the necessary up-renormalization, taking into account the electron spin-flip rate in the quantum well. In contrast, no circular polarization is observed when the thin Fe layer is removed and despite the rather high magnetic polarizability of the 5d9 electronic open shell of Pt at the interface with MgO. This emphasizes the reduced size of tunneling branching of wave functions at the interface, of the order of the atomic plane unit.

  20. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    NASA Technical Reports Server (NTRS)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  1. Microscopic Optical Characterization of Free Standing III-Nitride Substrates, ZnO Bulk Crystals, and III-V Structures for Non-Linear Optics. Part 2

    DTIC Science & Technology

    2010-05-18

    Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39-18 GIR: Materiales semiconductores y nanoestructuras para la optoelectrónica...de la Materia Condensada Edificio de i+d Paseo de Belen 1 47011 Valladolid, Spain GIR: Materiales semiconductores y nanoestructuras para la...380 400 420 440 460 480 500 520 540 560 580 600 620 nm 1 2 3 2 3 1 GIR: Materiales semiconductores y

  2. Materials Science and Device Physics of 2-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Fang, Hui

    Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this

  3. Dilute ferromagnetic semiconductors: Physics and spintronic structures

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Ohno, Hideo

    2014-01-01

    This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, IV-VI, V2-VI3, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

  4. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    NASA Astrophysics Data System (ADS)

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-12-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

  5. Magnetic field aligned assembly of nonmagnetic composite dumbbells in nanoparticle-based aqueous ferrofluid.

    PubMed

    Takahashi, Hayato; Nagao, Daisuke; Watanabe, Kanako; Ishii, Haruyuki; Konno, Mikio

    2015-05-26

    Monodisperse, nonmagnetic, asymmetrical composite dumbbells in a suspension of magnetic nanoparticles (ferrofluid) were aligned by application of an external magnetic field to the ferrofluid. The asymmetrical composite dumbbells were prepared by two-step soap-free emulsion polymerization consisting of the first polymerization to coat spherical silica cores with cross-linked poly(methyl methacrylate) (PMMA) shell and the second polymerization to protrude a polystyrene (PSt) lobe from the core-shell particles. A chain structure of nonmagnetic dumbbells oriented to the applied magnetic field was observed at nanoparticle content of 2.0 vol % and field strengths higher than 1.0 mT. A similar chain structure of the dumbbells was observed under application of alternating electric field at strengths higher than 50 V/mm. Parallel and orthogonally combined applications of the electric and magnetic fields were also conducted to examine independence of the electric and magnetic applications as operational factors in the dumbbell assembling. Dumbbell chains stiffer than those in a single application of external field were formed in the parallel combined application of electric and magnetic fields. The orthogonal combination of the different applied fields could form a magnetically aligned chain structure of the nonmagnetic dumbbells oriented to the electric field. The present work experimentally indicated that the employment of inverse magnetorheological effect for nonmagnetic, anisotropic particles can be a useful method for the simultaneous controls over the orientation and the positon of anisotropic particles in their assembling.

  6. Spin transport in non-magnetic nano-structures induced by non-local spin injection

    NASA Astrophysics Data System (ADS)

    Idzuchi, Hiroshi; Fukuma, Yasuhiro; Otani, YoshiChika

    2015-04-01

    We review our recent achievements on optimization of spin injection from ferromagnetic into non-magnetic metals and characterization of spin transport properties in the non-magnetic nano-structures. We have realized the efficient spin injection by solving spin resistance mismatch problem in spin diffusion process across the interface between ferromagnetic and nonmagnetic metals. We analyzed temperature dependent spin relaxation length and time in Ag within the framework of the Elliot-Yafet mechanism based on spin-orbit interaction and momentum relaxation. The spin relaxation length in a light metal Mg is found comparable to that of Ag due to its peculiar electronic band structure in which so called spin-hotspots dramatically enhance spin relaxation. Spin relaxation properties in various metals are also quantitatively discussed. We employed commonly used Hanle effect measurements to characterize spin relaxation of spin current and reexamined both theoretically and experimentally the effect of spin absorption at the interface. The affected spatial profile of chemical potential due to the longitudinal and transverse spin absorption results in the broadened Hanle curve. All the Hanle curves both in metallic and semi-conductive materials including graphene fall into the universal scaling plot. Anatomy of spin injection properties of the junction and spin transport properties in non-magnetic metal is shown in tables.

  7. Development of a computational model for predicting solar wind flows past nonmagnetic terrestrial planets

    NASA Technical Reports Server (NTRS)

    Stahara, S. S.; Spreiter, J. R.

    1983-01-01

    A computational model for the determination of the detailed plasma and magnetic field properties of the global interaction of the solar wind with nonmagnetic terrestrial planetary obstacles is described. The theoretical method is based on an established single fluid, steady, dissipationless, magnetohydrodynamic continuum model, and is appropriate for the calculation of supersonic, super-Alfvenic solar wind flow past terrestrial ionospheres.

  8. Pulsed remote field eddy current technique applied to non-magnetic flat conductive plates

    NASA Astrophysics Data System (ADS)

    Yang, Binfeng; Zhang, Hui; Zhang, Chao; Zhang, Zhanbin

    2013-12-01

    Non-magnetic metal plates are widely used in aviation and industrial applications. The detection of cracks in thick plate structures, such as multilayered structures of aircraft fuselage, has been challenging in nondestructive evaluation societies. The remote field eddy current (RFEC) technique has shown advantages of deep penetration and high sensitivity to deeply buried anomalies. However, the RFEC technique is mainly used to evaluate ferromagnetic tubes. There are many problems that should be fixed before the expansion and application of this technique for the inspection of non-magnetic conductive plates. In this article, the pulsed remote field eddy current (PRFEC) technique for the detection of defects in non-magnetic conducting plates was investigated. First, the principle of the PRFEC technique was analysed, followed by the analysis of the differences between the detection of defects in ferromagnetic and non-magnetic plain structures. Three different models of the PRFEC probe were simulated using ANSYS. The location of the transition zone, defect detection sensitivity and the ability to detect defects in thick plates using three probes were analysed and compared. The simulation results showed that the probe with a ferrite core had the highest detecting ability. The conclusions derived from the simulation study were also validated by conducting experiments.

  9. A demountable nonmagnetic multiconductor feedthrough suitable for use in liquid helium applications

    NASA Astrophysics Data System (ADS)

    Bass, Christopher D.

    2008-05-01

    A superfluid-helium-tight nonmagnetic electrical feedthrough has been developed by using brass pins embedded within an epoxy resin plug and mounted on a beryllium copper Conflat flange. A method for building these feedthroughs is discussed, and their performance history is described.

  10. Magnetic Semiconductor Quantum Wells in High Fields to 60 Tesla: Photoluminescence Linewidth Annealing at Magnetization Steps

    SciTech Connect

    Awschalom, D.D.; Crooker, S.A.; Lyo, S.K.; Rickel, D.G.; Samarth, N.

    1999-05-24

    Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.

  11. Ion mixing of semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Xia, W.; Hsu, S. N.; Han, C. C.; Pappert, S. A.; Zhu, B.; Cozzolino, C.; Yu, P. K. L.; Lau, S. S.; Poker, D. B.; White, C. W.; Schwarz, S. A.

    1991-07-01

    Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder is to implant a moderate dose of impurity ions (˜ 10 15 cm -2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of four parameters (1) irradiation temperature, (2) dose dependence, (3) annealing, and (4) electrically active ions. We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.

  12. Ion mixing of semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Xia, W.; Hsu, S. N.; Han, C. C.; Pappert, S. A.; Zhu, B.; Cozzolino, C.; Yu, P. K. L.; Lau, S. S.; Poker, D. B.; White, C. W.

    Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method in induce compositional disorder is to implant a moderate dose of impurity ions (approx. 10 (exp 15)/sq cm) into the structure at room temperature, followed by a high temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. Compositional disordering was studied disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. It was found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. The two processes were compared in terms of five parameters (1) irradiation temperature, (2) dose dependence (3) annealing, and (4) electrically active ions. It was found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.

  13. Hybrid em wave - polar semiconductor interaction: A polaronic study

    SciTech Connect

    Paliwal, Ayushi Dubey, Swati; Ghosh, S.

    2015-07-31

    Present paper considers incidence of a most realistic hybrid pump wave on a weakly polar semiconductor having a very small coupling constant. Possibility of optical parametric interaction has been explored in the presence of an external transverse magnetic field. The effect of doping concentrations and transverse magnetostatic field on threshold characteristics of optical parametric interaction in polar semiconductor plasma has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. Numerical estimations have been carried out by using data of weakly polar III-V GaAs semiconductor and influence of control parameters on electron-LO phonon interaction has been analyzed. A particular range of physical parameters is found to be suitable for minimum threshold. The choice of nonlinear medium and favorable range of operating parameters are crucial aspects in design and fabrication of parametric amplifiers and oscillators. The hybrid mode of the pump is found to be favorable for the onset of the said process and realization of a low cost amplifier.

  14. Estimation of Bi induced changes in the direct E0 band gap of III-V-Bi alloys and comparison with experimental data

    NASA Astrophysics Data System (ADS)

    Samajdar, D. P.; Dhar, S.

    2016-03-01

    Quantum dielectric Theory (QDT) is used to explain the band gap bowing effect observed in III-V-Bismides such as InSb1-xBix, InAs1-xBix, InP1-xBix, GaSb1-xBix, GaAs1-xBix and GaP1-xBix. The dependence of the direct E0 band gap for these alloys on Bi mole fraction is calculated using QDT which requires the evaluation of the bowing parameter c. The bowing parameter gives the deviation of the direct E0 band gap from the linear relationship of E0 with Bi mole fraction. The band gap reduction values obtained using QDT are compared with those calculated using Virtual Crystal approximation (VCA) and Valence Band Anticrossing (VBAC) model as well as with the reported experimental data and the results of the comparison shows excellent agreement.

  15. The recombination velocity at III-V compound heterojunctions with applications to Al (x) Ga(1-x)As-GaAs(1-y)Sb(y)

    NASA Technical Reports Server (NTRS)

    Kim, J. S.

    1978-01-01

    Interface recombination velocity in AlxGa1-xAs-GaAs and A10.85 Ga0.15As-GaAs1-ySby heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.

  16. Heterogeneously integrated III-V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

    NASA Astrophysics Data System (ADS)

    Wang, Ruijun; Sprengel, Stephan; Malik, Aditya; Vasiliev, Anton; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

    2016-11-01

    We report on 2.3x μm wavelength InP-based type-II distributed feedback (DFB) lasers heterogeneously integrated on a silicon photonics integrated circuit. In the devices, a III-V epitaxial layer stack with a "W"-shaped InGaAs/GaAsSb multi-quantum-well active region is adhesively bonded to the first-order silicon DFB gratings. Single mode laser emission coupled to a single mode silicon waveguide with a side mode suppression ratio of 40 dB is obtained. In continuous-wave regime, the 2.32 μm laser operates close to room temperature (above 15 °C) and emits more than 1 mW output power with a threshold current density of 1.8 kA/cm2 at 5 °C. A tunable diode laser absorption measurement of CO is demonstrated using this source.

  17. Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    CA Wang

    2004-05-06

    This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed. Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices.

  18. Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits

    NASA Astrophysics Data System (ADS)

    Strangio, S.; Palestri, P.; Lanuzza, M.; Esseni, D.; Crupi, F.; Selmi, L.

    2017-02-01

    In this work, a benchmark for low-power digital applications of a III-V TFET technology platform against a conventional CMOS FinFET technology node is proposed. The analysis focuses on full-adder circuits, which are commonly identified as representative of the digital logic environment. 28T and 24T topologies, implemented in complementary-logic and transmission-gate logic, respectively, are investigated. Transient simulations are performed with a purpose-built test-bench on each single-bit full adder solution. The extracted delays and energy characteristics are post-processed and translated into figures-of-merit for multi-bit ripple-carry-adders. Trends related to the different full-adder implementations (for the same device technology platform) and to the different technology platforms (for the same full-adder topology) are presented and discussed.

  19. Effects of brining on the corrosion of ZVI and its subsequent As(III/V) and Se(IV/VI) removal from water.

    PubMed

    Yang, Zhe; Xu, Hui; Shan, Chao; Jiang, Zhao; Pan, Bingcai

    2017-03-01

    Zero-valent iron (ZVI) has been extensively applied in water remediation, and most of the ZVI materials employed in practical applications are iron scraps, which have usually been corroded to certain extent under different conditions. In this study, the effects of brining with six solutions (NaCl, Na2SO4, NaHCO3, Na2SiO3, NH4Cl, and NaH2PO4) on the corrosion of ZVI and its performance in the removal of As(III/V)/Se(IV/VI) were systematically investigated. All the studied solutions enhanced the corrosion of ZVI except for Na2SiO3, and the degrees of corrosion followed the order of NH4Cl > NaH2PO4 > Na2SO4 > NaCl > NaHCO3 > H2O > Na2SiO3. The corrosion products derived from ZVI were identified by SEM and XRD, and the dominant corrosion products varied with the type of brine solution. The positive correlation between the degree of ZVI corrosion and As(III/V)/Se(IV/VI) removal by the pre-corroded ZVI (pcZVI) was verified. In addition, As and Se removal by pcZVI was realized via a comprehensive process including adsorption and reduction, as further supported by the XPS analysis. We believe this study will shed new light upon the selection of iron materials pre-corroded under different saline conditions for practical water remediation.

  20. Synthesis and characterization of II-IV-V(2) semiconductors

    NASA Astrophysics Data System (ADS)

    Wen, Yuan-Chung

    1998-11-01

    The II-IV-V2 chalcopyrite semiconductors are isostructural and isoelectronic analogues of the III-V semiconductors. Like the III-V materials the compounds have potential applications in nonlinear optics, optoelectronics and solar energy conversion. The naturally abundant elements and high absorption coefficients in many of the II-IV-V2's make these materials more attractive for large scale applications. Our study focused on the investigation of the basic electrical and optical properties of a number of II-IV- V2 materials by photoelectrochemical methods and photoluminescence. A variety of single crystals in II-IV- V2 family such as ZnSiAs2, CdSiAs2, CdSiP2, ZnSiP2, CdGeP2, ZnGeP2, and ZnSnP2 have been synthesized by chemical vapor transport (CVT) and Bridgman growth techniques. Intentional doping with S, Se, Al, Ga and In of the crystals resulted in complex behavior. In some systems compensation with intrinsic acceptors was observed and in other systems the change of doping type and controllable doping levels were observed. The bandgap, doping level, band position, quantum yield and current voltage behavior in various electrolytes for many of the II-IV-V2 semiconductors have been determined using photoelectrochemical methods. Hall effect measurements of doping density have been used to compare with values obtained from Mott-Schottky analysis. Frequency and pH dependence of the Mott-Schottky plots were observed. The minority diffusion length of II-IV-V2 calculated from quantum yield and absorption coefficient data at the onset of photocurrent matches well to the prediction from the Gartner Model. Polarization dependent photoluminescence has been used for the study of interband transitions and optical anisotropy in CdSiAs2 and CdSiP2 crystals. The electrode surfaces of CdSiAs2 crystals treated by wet chemical etchants were investigated and characterized by XPS. 31P solid state MAS NMR studies of the II-IV- P2 compounds gave very sharp 31P resonances and revealed

  1. The development of photoemission spectroscopy and its application to the study of semiconductor interfaces Observations on the interplay between basic and applied research (Welch Memorial Lecture)

    NASA Technical Reports Server (NTRS)

    Spicer, W. E.

    1985-01-01

    A sketch is given of the development of photoemission electron spectroscopy (PES) with emphasis on the author's own experience. Emphasis is placed: (1) on the period between 1958-1970; (2) on the various developments which were required for PES to emerge; and (3) on the strong interactions between applied/fundamental and knowledge/empirically based research. A more detailed discussion is given of the recent (1975-present) application of PES to study the interfaces of III-V semiconductors.

  2. A review of thermal processing in the subsecond range: semiconductors and beyond

    NASA Astrophysics Data System (ADS)

    Rebohle, Lars; Prucnal, Slawomir; Skorupa, Wolfgang

    2016-10-01

    Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultra-shallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

  3. Experimental Investigations of Transport and Optical Properties of III-V Quantum Well Structures Grown via Molecular Beam Epitaxy under Optimal Growth Conditions

    DTIC Science & Technology

    1989-10-15

    Device Applications" (13-18 March, 1988, Newport Beach Mariott Hotel , CA), SPIE Vol. 946, p.150 (1988). 13. W.C. Tang, Pudong Lao, and A. Madhukar...SPIE Conference on "Advances in Semiconductors and Superconductors; Physics and Device Applications", (13-18 March, 1988, Newport Beach Mariott Hotel ...Semiconductors and Superconductors: Physics and Device Applications" (13-18 March, 1988, Newport Beach Mariott Hotel , CA). 4. W.C. Tang, Pudong Lao, and A

  4. Iron and nitrogen self-diffusion in non-magnetic iron nitrides

    SciTech Connect

    Gupta, Mukul; Gupta, Ajay; Gupta, Rachana; Stahn, J.; Horisberger, M.; Wildes, A.; Tayal, Akhil

    2011-12-15

    The self-diffusion of iron and nitrogen is measured in nm range non-magnetic iron nitride thin films. Two non-magnetic iron nitrides, Fe{sub 2.23}N and FeN, were studied using neutron reflectivity. Neutron reflectivity with a depth resolution in the sub-nm range has a different scattering cross section for isotopes, providing a unique opportunity to measure very small diffusivities. The isotope heterostructure in thin film multilayers [Fe-N/{sup 57}Fe-N]{sub 10} and [Fe-N/Fe-{sup 15}N]{sub 10} were prepared using magnetron sputtering. It was observed that nitrogen diffuses slower than iron although the atomic size of iron is larger than that of nitrogen. It was found that a significantly larger group of N atoms participates in the diffusion process than of Fe, making N diffusion slower than that of Fe.

  5. Apparatus and method for continuous separation of magnetic particles from non-magnetic fluids

    DOEpatents

    Oder, Robin R.; Jamison, Russell E.

    2010-02-09

    A magnetic separator vessel (1) for separating magnetic particles from non-magnetic fluid includes a separation chamber having an interior and exterior wall, a top and bottom portion; a magnet (3) having first and second poles (2) positioned adjacent to the exterior wall, wherein the first pole is substantially diametrically opposed to the second pole; a inlet port (5) is directed into the top portion of the separation chamber, wherein the inlet port (5) is positioned adjacent to one of the first and second poles (2), wherein the inlet port (5) is adapted to transfer a mixture into the separation chamber; an underflow port (6) in communication with the bottom portion, wherein the underflow port (6) is adapted to receive the magnetic particles; and an overflow port (9) in communication with the separation chamber, wherein the overflow port (9) is adapted to receive the non-magnetic fluid.

  6. Thermal spin current and spin accumulation at ferromagnetic insulator/nonmagnetic metal interface

    NASA Astrophysics Data System (ADS)

    Shen, Y. H.; Wang, X. S.; Wang, X. R.

    2016-07-01

    Spin current injection and spin accumulation near a ferromagnetic insulator (FI)/nonmagnetic metal (NM) bilayer film under a thermal gradient is investigated theoretically. By using the Fermi golden rule and the Boltzmann equations, we find that FI and NM can exchange spins via interfacial electron-magnon scattering because of the imbalance between magnon emission and absorption caused by either the deviation of the magnon number from the equilibrium Bose-Einstein distribution or the difference in magnon temperature and electron temperature. A temperature gradient in FI and/or a temperature difference across the FI/NM interface generates a spin current which carries angular momenta parallel to the magnetization of FI from the hotter side to the colder one. Interestingly, the spin current induced by a temperature gradient in NM is negligibly small due to the nonmagnetic nature of the nonequilibrium electron distributions. The results agree well with all existing experiments.

  7. Sensitivity of a 3D fully-gapped topological superconductor to non-magnetic impurities

    NASA Astrophysics Data System (ADS)

    Ota, Yukihiro; Nagai, Yuki; Machida, Masahiko

    2015-03-01

    Topological superconductors (TSC) are notable materials, owing to the mathematical curiosity and the application potential. The bulk TSC can emerge by copper intercalation into topological insulator Bi2Se3. In this paper, we theoretically study the non-magnetic impurity effects in the mean-field model of CuxBi2Se3, focusing on the odd-parity fully-gapped superconducting state. Calculating the density of states with a self-consistent T-matrix approach, we test the presence of mid-gap states, leading to pair-breaking effects. Remarkably, the sensitivity to non-magnetic impurities strongly depend on a normal-state dispersion character, i.e., either non-relativistic or relativistic dispersion relations. We show unification picture for understanding this intriguing result, deriving a low-energy effective superconducting theory.

  8. Radiation-Suppressed plasmonic open resonators designed by nonmagnetic transformation optics

    PubMed Central

    Xu, Hongyi; Wang, Xingjue; Yu, Tianyuan; Sun, Handong; Zhang, Baile

    2012-01-01

    How to confine light energy associated with surface plasmon polaritons (SPPs) in a physical space with minimal radiation loss whereas creating maximum interacting section with surrounding environment is of particular interest in plasmonic optics. By virtue of transformation optics, we propose a design method of forming a polygonal surface-plasmonic resonator in fully open structures by applying the nonmagnetic affine transformation optics strategy. The radiation loss can be suppressed because SPPs that propagate in the designed open structures will be deceived as if they were propagating on a flat metal/dielectric interface without radiation. Because of the nonmagnetic nature of the transformation strategy, this design can be implemented with dielectric materials available in nature. An experimentally verifiable model is subsequently proposed for future experimental demonstration. Our design may find potential applications in omnidirectional sensing, light harvesting, energy storage and plasmonic lasing. PMID:23136641

  9. Nonmagnetic rigid and flexible outer sheath with pneumatic interlocking mechanism for minimally invasive surgical approach.

    PubMed

    Yamashita, Hiromasa; Zuo, Siyang; Masamune, Ken; Liao, Hongen; Dohi, Takeyoshi

    2009-01-01

    We developed a nonmagnetic rigid and flexible outer sheath with pneumatic interlocking mechanism using flexible toothed links and a wire-driven bending distal end. The outer sheath can be switched between rigid and flexible modes easily depending on surgical scenes, and the angle of its distal end can be controlled by three nylon wires. All components of flexible parts are made of MRI-compatible nonmagnetic plastics. We manufactured the device with 300-mm long, 16-mm outer diameter, 7-mm inner diameter and 90-mm bending distal end. Holding power of the device in rigid mode was maximum 3.6 N, which was sufficient for surgical tasks in body cavity. In vivo experiment using a swine, our device performed smooth insertion of a flexible endoscope and a biopsy forceps into reverse side of the liver, intestines and spleen with a curved path. In conclusion, our device shows availability of secure approach of surgical instruments into deep cavity.

  10. Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

    SciTech Connect

    Chen, C. H.; Cheng, Y. H.; Ko, C. W.; Hsueh, W. J.

    2015-10-12

    This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed to the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.

  11. Effect of nonmagnetic impurities on s± superconductivity in the presence of incipient bands

    NASA Astrophysics Data System (ADS)

    Chen, X.; Mishra, V.; Maiti, S.; Hirschfeld, P. J.

    2016-08-01

    Several Fe chalcogenide superconductors without hole pockets at the Fermi level display high temperature superconductivity, in apparent contradiction to naive spin fluctuation pairing arguments. Recently, scanning tunneling microscopy experiments studied the influence of impurities on some of these materials and claimed that nonmagnetic impurities do not create in-gap states, leading to the conclusion that the gap must be s++, i.e., conventional s wave with no gap sign change. Here we critique this argument, and give various ways sign-changing gaps can be consistent with the absence of such bound states. In particular, we calculate the bound states for an s± system with a hole pocket below the Fermi level, and show that the nonmagnetic impurity bound state energy generically tracks the gap edge Em i n in the system, thereby rendering it unobservable. A failure to observe a bound state in the case of a nonmagnetic impurity therefore cannot be used as an argument to exclude sign-changing pairing states.

  12. Thermoelectric properties of two-dimensional topological insulators doped with nonmagnetic impurities

    SciTech Connect

    Li, L. L.; Xu, W.

    2014-07-07

    We present a theoretical study on the thermoelectric properties of two-dimensional topological insulators (2DTIs) doped with nonmagnetic impurities. We develop a tractable model to calculate the electronic band structure without additional input parameters and to evaluate the thermoelectric properties of 2DTIs based on CdTe/HgTe quantum wells. We find that with increasing the doping concentration of nonmagnetic impurity, the edge states dominate the thermoelectric transport and the bulk-state conduction is largely suppressed. For typical sample parameters, the thermoelectric figure of merit ZT (a quantity used to characterize the conversion efficiency of a thermoelectric device between the heat and electricity) can be much larger than 1, which is a great advance over conventional thermoelectric materials. Furthermore, we show that with decreasing the 2DTI ribbon width or the Hall-bar width, ZT can be considerably further improved. These results indicate that the CdTe/HgTe 2DTIs doped with nonmagnetic impurities can be potentially applied as high-efficiency thermoelectric materials and devices.

  13. Maps showing mineralogical data for nonmagnetic heavy-mineral concentrates in the Talkeetna Quadrangle, Alaska

    USGS Publications Warehouse

    Tripp, R.B.; Karlson, R.C.; Curtin, G.C.

    1978-01-01

    Reconnaissance geochemical and mineralogical sampling was done in the Talkeetna Quadrangle during 1975 and 1976 as part of the Alaska Mineral Resource Assessment Program (AMRAP). These maps show the distribution of gold, scheelite, chalcopyrite, arsenopyrite, galena, fluorite, cinnabar, and malachite in the nonmagnetic fraction of heavy-mineral concentrates. Heavy-mineral concentrate samples were collected at 812 sites from active stream channels. The heavy-mineral concentrates were obtained by panning stream sediment in the field to remove most of the light minerals. The panned samples were then sieved through a 20-mesh (0.8 mm) sieve in the laboratory, and the minus-20-mesh fraction was further separated with bromoform (specific gravity, 2.86) to remove any remaining light-mineral grains. Magnetite and other strongly magnetic heavy minerals were removed from the heavy-mineral fraction by use of a hand magnet. The remaining sample was passed through a Frantz Isodynamic Separator and a nonmagnetic fraction was examined for its mineralogical content with the aid of a binocular microscope and an x-ray diffractometer. The nonmagnetic concentrates primarily contain phyllite fragments, muscovite, sphene, zircon, apatite, tourmaline, rutile, and anatase. Most ore and ore-related minerals also occur in this fraction.

  14. The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction.

    PubMed

    Kim, Sun-Woo; Kim, Seung-Hwan; Kim, Gwang-Sik; Choi, Changhwan; Choi, Rino; Yu, Hyun-Yong

    2016-12-28

    We demonstrate the contact resistance reduction for III-V semiconductor-based electrical and optical devices using the interfacial dipole effect of ultrathin double interlayers in a metal-interlayers-semiconductor (M-I-S) structure. An M-I-S structure blocks metal-induced gap states (MIGS) to a sufficient degree to alleviate Fermi level pinning caused by MIGS, resulting in contact resistance reduction. In addition, the ZnO/TiO2 interlayers of an M-I-S structure induce an interfacial dipole effect that produces Schottky barrier height (ΦB) reduction, which reduces the specific contact resistivity (ρc) of the metal/n-type III-V semiconductor contact. As a result, the Ti/ZnO(0.5 nm)/TiO2(0.5 nm)/n-GaAs metal-double interlayers-semiconductor (M-DI-S) structure achieved a ρc of 2.51 × 10(-5) Ω·cm(2), which exhibited an ∼42 000× reduction and an ∼40× reduction compared to the Ti/n-GaAs metal-semiconductor (M-S) contact and the Ti/TiO2(0.5 nm)/n-GaAs M-I-S structure, respectively. The interfacial dipole at the ZnO/TiO2 interface was determined to be approximately -0.104 eV, which induced a decrease in the effective work function of Ti and, therefore, reduced ΦB. X-ray photoelectron spectroscopy analysis of the M-DI-S structure also confirmed the existence of the interfacial dipole. On the basis of these results, the M-DI-S structure offers a promising nonalloyed Ohmic contact scheme for the development of III-V semiconductor-based applications.

  15. Magnetoresistance generated from charge-spin conversion by anomalous Hall effect in metallic ferromagnetic/nonmagnetic bilayers

    NASA Astrophysics Data System (ADS)

    Taniguchi, Tomohiro

    2016-11-01

    A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and transverse resistivities in both nonmagnet and ferromagnet are obtained by solving the spin diffusion equation. The magnetoresistance generated from charge-spin conversion purely caused by the anomalous Hall effect in the ferromagnet is found to be proportional to the square of the spin polarizations in the ferromagnet and has fixed sign. We also find additional magnetoresistances in both nonmagnet and ferromagnet arising from the mixing of the spin Hall and anomalous Hall effects. The sign of this mixing resistance depends on those of the spin Hall angle in the nonmagnet and the spin polarizations of the ferromagnet.

  16. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  17. Non-magnetic and magnetic impurity effects on superconductivity in the ternary iron-silicide Lu2FeSi

    NASA Astrophysics Data System (ADS)

    Watanabe, Tadataka; Okuyama, Hiroaki; Takase, Kouichi; Takano, Yoshiki

    2010-12-01

    We studied effect of non-magnetic and magnetic impurities on superconductivity in LuFeSi by investigating superconducting properties of (LuFeSi (R=Sc,Y, and Dy). The rapid depression of Tc by non-magnetic impurities reveals strong pair breaking by disorder, providing compelling evidence for the sign reversal of the superconducting order parameter in LuFeSi.

  18. Quantum of optical absorption in two-dimensional semiconductors.

    PubMed

    Fang, Hui; Bechtel, Hans A; Plis, Elena; Martin, Michael C; Krishna, Sanjay; Yablonovitch, Eli; Javey, Ali

    2013-07-16

    The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.

  19. Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

    NASA Astrophysics Data System (ADS)

    Gladysiewicz, M.; Kudrawiec, R.; Wartak, M. S.

    2016-02-01

    The 8-band kp Hamiltonian is applied to calculate electronic band structure and material gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We analyzed three Bi-containing QWs (GaSbBi, GaInSbBi, and GaInAsSbBi) and different Bi-free barriers (GaSb and AlGaInAsSb), lattice matched to GaSb. Bi-related changes in the electronic band structure of III-V host incorporated into our formalism are based on recent ab-initio calculations for ternary alloys (III-Ga-Bi and III-In-Bi) [Polak et al., Semicond. Sci. Technol. 30, 094001 (2015)]. When compared to Bi-free QWs, the analyzed Bi-containing structures show much better quantum confinement in the valence band and also larger redshift of material gain peak per percent of compressive strain. For 8 nm thick GaInSb/GaSb QWs, material gain of the transverse electric (TE) mode is predicted at 2.1 μm for the compressive strain of ɛ = 2% (32% In). The gain peak of the TE mode in 8 nm thick GaSbBi/GaSb QW reaches this wavelength for compressive strain of 0.15% that corresponds to about 5% Bi. It has also been shown that replacing In atoms by Bi atoms in GaInSbBi/GaSb QWs while keeping the same compressive strain (ɛ = 2%) in QW region enhances and shifts gain peak significantly to the longer wavelengths. For 8 nm wide GaInSbBi/GaSb QW with 5% Bi, the gain peak is predicted at around 2.6 μm, i.e., is redshifted by about 400 nm compared to Bi-free QW. For 8 nm wide GaInAsSbSb QWs (80% In, 5% Bi, and ɛ = 2%) with proper AlGaInAsSb barriers, it is possible to achieve large material gain even at 4.0 μm.

  20. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOEpatents

    Spahn, Olga B.; Lear, Kevin L.

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.