Thermistor bolometer radiometer signal contamination due to parasitic heat diffusion

NASA Astrophysics Data System (ADS)

Priestley, Kory J.; Mahan, J. R.; Haeffelin, Martial P.; Savransky, Maxim; Nguyen, Tai K.

1995-12-01

Current efforts are directed at creating a high-level end-to-end numerical model of scanning thermistor bolometer radiometers of the type used in the Earth Radiation Budget Experiment (ERBE) and planned for the clouds and the earth's radiative energy system (CERES) platforms. The first-principle model accurately represents the physical processes relating the electrical signal output to the radiative flux incident to the instrument aperture as well as to the instrument thermal environment. Such models are useful for the optimal design of calibration procedures, data reduction strategies, and the instruments themselves. The modeled thermistor bolometer detectors are approximately 40 micrometers thick and consist of an absorber layer, the thermistor layer, and a thermal impedance layer bonded to a thick aluminum substrate which acts as a heat sink. Thermal and electrical diffusion in the thermistor bolometer detectors is represented by a several-hundred-node- finite-difference formulation, and the temperature field within the aluminum substrate is computed using the finite-element method. The detectors are electrically connected in adjacent arms of a two-active-arm bridge circuit so that the effects of common mode thermal noise are minimized. However, because of a combination of thermistor self heating, loading of the bridge by the bridge amplifier, and the nonlinear thermistor resistance-temperature relationship, bridge deflections can still be provoked by substrate temperature changes, even when the change is uniform across the substrate. Of course, transient temperature gradients which may occur in the substrate between the two detectors will be falsely interpreted as a radiation input. The paper represents the results of an investigation to define the degree of vulnerability of thermistor bolometer radiometers to false signals provoked by uncontrolled temperature fluctuations in the substrate.

A Study of Thermistor Performance within a Textile Structure.

PubMed

Hughes-Riley, Theodore; Lugoda, Pasindu; Dias, Tilak; Trabi, Christophe L; Morris, Robert H

2017-08-05

Textiles provide an ideal structure for embedding sensors for medical devices. Skin temperature measurement is one area in which a sensor textile could be particularly beneficial; pathological skin is normally very sensitive, making the comfort of anything placed on that skin paramount. Skin temperature is an important parameter to measure for a number of medical applications, including for the early detection of diabetic foot ulcer formation. To this end an electronic temperature-sensor yarn was developed by embedding a commercially available thermistor chip into the fibres of a yarn, which can be used to produce a textile or a garment. As part of this process a resin was used to encapsulate the thermistor. This protects the thermistor from mechanical and chemical stresses, and also allows the sensing yarn to be washed. Building off preliminary work, the behaviour and performance of an encapsulated thermistor has been characterised to determine the effect of encapsulation on the step response time and absolute temperature measurements. Over the temperature range of interest only a minimal effect was observed, with step response times varying between 0.01-0.35 s. A general solution is presented for the heat transfer coefficient compared to size of the micro-pod formed by the encapsulation of the thermistor. Finally, a prototype temperature-sensing sock was produced using a network of sensing yarns as a demonstrator of a system that could warn of impending ulcer formation in diabetic patients.

A Study of Thermistor Performance within a Textile Structure

PubMed Central

Hughes-Riley, Theodore; Lugoda, Pasindu; Dias, Tilak; Trabi, Christophe L.; Morris, Robert H.

2017-01-01

Textiles provide an ideal structure for embedding sensors for medical devices. Skin temperature measurement is one area in which a sensor textile could be particularly beneficial; pathological skin is normally very sensitive, making the comfort of anything placed on that skin paramount. Skin temperature is an important parameter to measure for a number of medical applications, including for the early detection of diabetic foot ulcer formation. To this end an electronic temperature-sensor yarn was developed by embedding a commercially available thermistor chip into the fibres of a yarn, which can be used to produce a textile or a garment. As part of this process a resin was used to encapsulate the thermistor. This protects the thermistor from mechanical and chemical stresses, and also allows the sensing yarn to be washed. Building off preliminary work, the behaviour and performance of an encapsulated thermistor has been characterised to determine the effect of encapsulation on the step response time and absolute temperature measurements. Over the temperature range of interest only a minimal effect was observed, with step response times varying between 0.01–0.35 s. A general solution is presented for the heat transfer coefficient compared to size of the micro-pod formed by the encapsulation of the thermistor. Finally, a prototype temperature-sensing sock was produced using a network of sensing yarns as a demonstrator of a system that could warn of impending ulcer formation in diabetic patients. PMID:28783067

Assessing female sexual arousal with the labial thermistor: response specificity and construct validity.

PubMed

Prause, N; Heiman, J R

2009-05-01

The labial thermistor offers several potential psychometric advantages over existing measures of female sexual response; however, the thermistor lacked data to support these presumed advantages, especially with respect to its discriminant validity. In this study, both the labial thermistor was worn simultaneously with the vaginal photoplethysmograph as women viewed films. They also indicated their level of subjective sexual arousal using a lever. The labial thermistor discriminated sexual from nonsexual arousing stimuli and was sensitive to different levels of sexual arousal. The correspondence of the instrument with subjective sexual arousal, measured using a continuous lever, was lower during the mildly arousing sexual film and higher during the maximally sexual arousing film. One woman reported that the labial thermistor was very uncomfortable, while others indicated no or mild discomfort from each instrument. The vaginal photoplethysmograph largely replicated the effects documented by the labial thermistor, although it did not discriminate sexual stimuli of different intensity nor correspond with women's continuous lever responses as closely during the more arousing stimulus. Difficulties recording simultaneously with these instruments are noted. The labial thermistor adequately discriminates between generally arousing and sexually arousing stimuli, increasing its utility as a measure for between-subject study designs.

Thermistor holder for skin-temperature measurements

NASA Technical Reports Server (NTRS)

Greenleaf, J. E.; Williams, B. A.

1974-01-01

Sensing head of thermistor probe is supported in center area of plastic ring which has tabs so that it can be anchored in place by rubber bands or adhesive tapes. Device attaches probes to human subjects practically, reliably, and without affecting characteristics of skin segment being measured.

Subsampled Numerical Experiments as a Guide for Field Deployment of Thermistor Chains

NASA Astrophysics Data System (ADS)

Shaw, Justin; Stastna, Marek

2017-11-01

Thermistor chains are a standard tool for recording temperature profiles in geophysical flows. Density values can be inferred from readings and the resulting density field analyzed for the passage of internal waves, Kelvin-Helmholtz billows, and other dynamic events. The number and spacing of the thermistors, both on and between chains, determines which events can be identified in the dataset. We examine the effect of changing these variables by subsampling a set of numerical experiments to simulate thermistor chain locations. A pseudo spectral method was used to solve the incompressible Navier-Stokes equations under the Boussinesq approximation. The resulting flows are a set of high resolution seiches where the depth was held constant across experiments, and the length was varied. Sampling a known, commonly occurring flow with relatively simple geometry allows for a clear analysis of the effects of thermistor placement in the capture of dynamic events. We will discuss three dimensional deployment strategies, as well as EOF and DMD analyses if there is time. Funded by a Grant from the National Sciences and Engineering Research Council of Canada.

Uncertainty propagation in the calibration equations for NTC thermistors

NASA Astrophysics Data System (ADS)

Liu, Guang; Guo, Liang; Liu, Chunlong; Wu, Qingwen

2018-06-01

The uncertainty propagation problem is quite important for temperature measurements, since we rely so much on the sensors and calibration equations. Although uncertainty propagation for platinum resistance or radiation thermometers is well known, there have been few publications concerning negative temperature coefficient (NTC) thermistors. Insight into the propagation characteristics of uncertainty that develop when equations are determined using the Lagrange interpolation or least-squares fitting method is presented here with respect to several of the most common equations used in NTC thermistor calibration. Within this work, analytical expressions of the propagated uncertainties for both fitting methods are derived for the uncertainties in the measured temperature and resistance at each calibration point. High-precision calibration of an NTC thermistor in a precision water bath was performed by means of the comparison method. Results show that, for both fitting methods, the propagated uncertainty is flat in the interpolation region but rises rapidly beyond the calibration range. Also, for temperatures interpolated between calibration points, the propagated uncertainty is generally no greater than that associated with the calibration points. For least-squares fitting, the propagated uncertainty is significantly reduced by increasing the number of calibration points and can be well kept below the uncertainty of the calibration points.

Time-Separating Heating and Sensor Functions of Thermistors in Precision Thermal Control Applications

NASA Technical Reports Server (NTRS)

Cho, Hyung J.; Sukhatme, Kalyani G.; Mahoney, John C.; Penanen, Konstantin Penanen; Vargas, Rudolph, Jr.

2010-01-01

A method allows combining the functions of a heater and a thermometer in a single device, a thermistor, with minimal temperature read errors. Because thermistors typically have a much smaller thermal mass than the objects they monitor, the thermal time to equilibrate the thermometer to the temperature of the object is typically much shorter than the thermal time of the object to change its temperature in response to an external perturbation.

Attractive mechanical properties of a lightweight highly sensitive bi layer thermistor: polycarbonate/organic molecular conductor

NASA Astrophysics Data System (ADS)

Laukhina, E.; Lebedev, V.; Rovira, C.; Laukhin, V.; Veciana, J.

2016-03-01

The paper covers some of the basic mechanical characteristics of a recently developed bi layer thermistor: polycarbonate/(001) oriented layer of organic molecular conductor α’-(BEDT-TTF)2IxBr3-x, were BEDT-TTF=bis(ethylenedithio)tetrathiafulvalen. The nano and macro mechanical properties have been studied in order to use this flexible, low cost thermistor in sensing applications by proper way. The nano-mechanical properties of the temperature sensitive semiconducting layer of α’-(BEDT-TTF)2IxBr3-x were tested using nanoindentation method. The value of Young's modulus in direction being perpendicular to the layer plan was found as 9.0 ±1.4 GPa. The macro mechanical properties of the thermistor were studied using a 5848 MicroTester. The tensile tests showed that basic mechanical characteristics of the thermistor are close to those of polycarbonate films. This indicates a good mechanical strength of the developed sensor. Therefore, the thermistor can be used in technologies that need to be instrumented with highly robustness lightweight low cost temperature sensors. The paper also reports synthetic details on fabricating temperature sensing e-textile. As the temperature control is becoming more and more important in biomedical technologies like healthcare monitoring, this work strongly contributes on the ongoing research on engineering sensitive conducting materials for biomedical applications.

A Simple Experiment to Determine the Characteristics of an NTC Thermistor for Low-Temperature Measurement Applications

ERIC Educational Resources Information Center

Mawire, A.

2012-01-01

A simple low-cost experiment for undergraduate students to determine the characteristics of a negative temperature coefficient of resistance thermistor is presented. The experiment measures the resistance-temperature and voltage-temperature characteristics of the thermistor. Results of the resistance-temperature experiment are used to determine…

Advanced shrink material for NTD process with lower Y/X shrinkage bias of elongated patterns

NASA Astrophysics Data System (ADS)

Miyamoto, Yoshihiro; Sekito, Takashi; Sagan, John; Horiba, Yuko; Kinuta, Takafumi; Nagahara, Tatsuro; Tarutani, Shinji

2015-03-01

Negative tone shrink materials (NSM) suitable for resolution enhancement of negative tone development (NTD) 193nm immersion resists have been developed. While this technology is being expanded to integrated circuits (IC) manufacturing, there still have two major problems to apply various processes. One of them is shrink ID bias which means shrink differences between isolated (I) and dense (D) CDs, and the other one is Y/X shrinkage bias which means shrinkage differences between major axis (Y) and minor axis (X) of the elongated or oval shape pattern. While we have presented the improvement of shrink ID bias at SPIE2014 [1], the reduction of Y/X shrinkage bias was the examination theme for quite some time. In this paper, we present Y/X shrinkage bias of current NTD shrink material, new concept material for Y/X bias reduction and the result of new shrink material. Current NTD shrink model has Y/X bias of 1.6 (Y shrink=16nm) at a mixing bake (MB) of 150°C on AZ AX2110P NTD elongated pattern of X=70nm and Y=210nm ADI. This means shrinkage of Y has larger shrinkage than X and that makes difficult to apply shrink material. We expected that the characteristic shape of elongated pattern was one of the root-cause for Y/X bias, and then simulated how to achieve equivalent shrinkage at Y and X. We concluded that available resist volume per each Y and X unit was not equivalent and need new shrink concept to solve Y/X bias. Based on our new concept, we prepared new shrink material which has lower Y/X bias and larger shrink amount compared with current NTD shrink material. Finally we have achieved lower Y/X bias from 1.6 to 1.1 at MB150°C and moreover got higher shrinkage than current NTD shrink material from 10.1nm to 16.7nm.

Mechanical Equivalent of Heat--Software for a Thermistor

ERIC Educational Resources Information Center

Boleman, Michael

2008-01-01

The Mechanical Equivalent of Heat Apparatus from PASCO scientific provides the means for doing a simple experiment to determine the mechanical equivalent of heat, "J." A necessary step of this experiment is to determine the temperature of an aluminum cylinder. By measuring the resistance of a thermistor embedded in the cylinder, one is able to…

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Optimization of narrow width effect on titanium thermistor in uncooled antenna-coupled terahertz microbolometer

NASA Astrophysics Data System (ADS)

Banerjee, Amit; Satoh, Hiroaki; Elamaran, Durgadevi; Sharma, Yash; Hiromoto, Norihisa; Inokawa, Hiroshi

2018-04-01

Uncooled antenna-coupled terahertz microbolometer arrays are fabricated with a meander-type Ti thermistor, and design widths (DW) = 0.1 and 0.2 µm, considering the design requirement to miniaturize detectors. Each unit device with DW = 0.1 µm of the thermistor has about 4.7 time higher electrical responsivity (132 V/W) than that with DW = 0.2 µm (28.2 V/W) at 10 µA bias current. For DW = 0.2 µm, the calculated noise equivalent power (NEP) was 2.29 × 10‑9 W/\\sqrt{\\text{Hz}} , whereas the minimum NEP of 4.43 × 10‑10 W/\\sqrt{\\text{Hz}} was obtained for DW = 0.1 µm devices, both at 10 µA bias current. The bulk value of temperature coefficient of resistance (TCR) of the Ti thermistor is markedly compromised in low dimensional devices, still in terms of responsivity and NEP, unit devices with Ti thermistor with the lower DW shows better performance. This is because the narrow width effect is minimized owing to higher resistivity for DW = 0.1 than that for DW = 0.2 µm. In this current report, we highlights the optimization of the narrow width effect on TCR of metal interconnects in nanometer dimensions, which to the best of our knowledge is not available at present.

Conjugated polymer/graphene oxide nanocomposite as thermistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, Girish M., E-mail: varadgm@gmail.com; Deshmukh, Kalim

2015-06-24

We demonstrated the synthesis and measurement of temperature dependent electrical resistivity of graphene oxide (GO) reinforced poly (3, 4 - ethylenedioxythiophene) - tetramethacrylate (PEDOTTMA)/Polymethylmethacrylate (PMMA) based nanocomposites. Negative temperature coefficient (NTC) was observed for 0.5, 1 % GO loading and the positive temperature coefficient (PTC) was observed for 1.5 and 2 % Go loading in the temperature (40 to 120 °C). The GO inducted nanocomposite perform as an excellent thermistor and suitable for electronic and sensor domain.

The Germanium Dichotomy in Martian Meteorites

NASA Technical Reports Server (NTRS)

Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

2016-01-01

Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

Mineral commodity profiles: Germanium

USGS Publications Warehouse

Butterman, W.C.; Jorgenson, John D.

2005-01-01

Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

Characterization of Neutron Transmutation Doped (NTD) Ge for low temperature sensor development

NASA Astrophysics Data System (ADS)

Mathimalar, S.; Singh, V.; Dokania, N.; Nanal, V.; Pillay, R. G.; Pal, S.; Ramakrishnan, S.; Shrivastava, A.; Maheshwari, Priya; Pujari, P. K.; Ojha, S.; Kanjilal, D.; Jagadeesan, K. C.; Thakare, S. V.

2015-02-01

Development of NTD Ge sensors has been initiated for low temperature (mK) thermometry in The India-based TIN detector (TIN.TIN). NTD Ge sensors are prepared by thermal neutron irradiation of device grade Ge samples at Dhruva reactor, BARC, Mumbai. Detailed measurements have been carried out in irradiated samples for estimating the carrier concentration and fast neutron induced defects. The Positron Annihilation Lifetime Spectroscopy (PALS) measurements indicated monovacancy type defects for all irradiated samples, while Channeling studies employing RBS with 2 MeV alpha particles, revealed no significant defects in the samples exposed to fast neutron fluence of ∼ 4 ×1016 /cm2 . Both PALS and Channeling studies have shown that vacuum annealing at 600 °C for ∼ 2 h is sufficient to recover the damage in the irradiated samples, thereby making them suitable for the sensor development.

Niemann-Pick type C disease: a QM/MM study of conformational changes in cholesterol in the NPC1(NTD) and NPC2 binding pockets.

PubMed

Elghobashi-Meinhardt, Nadia

2014-10-21

Niemann-Pick Type C disease is characterized by disrupted lipid trafficking within the late endosomal (LE)/lysosomal (Lys) cellular compartments. Cholesterol transport within the LE/Lys is believed to take place via a concerted hand-off mechanism in which a small (131aa) soluble cholesterol binding protein, NPC2, transfers cholesterol to the N-terminal domain (NTD) of a larger (1278aa) membrane-bound protein, NPC1(NTD). The transfer is thought to occur through the formation of a stable intermediate complex NPC1(NTD)-NPC2, in which the sterol apertures of the two proteins align to allow passage of the cholesterol molecule. In the working model of the NPC1(NTD)-NPC2 complex, the sterol apertures are aligned, but the binding pockets are bent with respect to one another. In order for cholesterol to slide from one binding pocket to the other, a conformational change must occur in the proteins, in the ligand, or in both. Here, we investigate the possibility that the ligand undergoes a conformational change, or isomerization, to accommodate the bent transfer pathway. To understand what structural factors influence the isomerization rate, we calculate the energy barrier to cholesterol isomerization in both the NPC1(NTD) and NPC2 binding pockets. Here, we use a combined quantum mechanical/molecular mechanical (QM/MM) energy function to calculate the isomerization barrier within the native NPC1(NTD) and NPC2 binding pockets before protein-protein docking as well as in the binding pockets of the NPC1(NTD)-NPC2 complex after docking has occurred. The results indicate that cholesterol isomerization in the NPC2 binding pocket is energetically favorable, both before and after formation of the NPC1(NTD)-NPC2 complex. The NPC1(NTD) binding pocket is energetically unfavorable to conformational rearrangement of the hydrophobic ligand because it contains more water molecules near the ligand tail and amino acids with polar side chains. For three NPC1(NTD) mutants investigated, L175Q

Tunable conductivity in mesoporous germanium

NASA Astrophysics Data System (ADS)

Beattie, Meghan N.; Bioud, Youcef A.; Hobson, David G.; Boucherif, Abderraouf; Valdivia, Christopher E.; Drouin, Dominique; Arès, Richard; Hinzer, Karin

2018-05-01

Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10‑3) Ω‑1 cm‑1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10‑3 Ω‑1 cm‑1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

Germanium recycling in the United States in 2000

USGS Publications Warehouse

Jorgenson, John D.

2006-01-01

This report describes the recycling flow of germanium in the United States in 2000, as well as other germanium material flow streams. Germanium was recycled mostly from new scrap that was generated during the manufacture of germanium-containing fiber optic cables and from new and old scrap products of germanium-containing infrared imaging devices. In 2000, about 11.5 metric tons of germanium was recycled, about 40 percent of which was derived from old scrap. The germanium recycling rate was estimated to be 50 percent, and germanium scrap recycling efficiency, 76 percent.

Germanium and indium

USGS Publications Warehouse

Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

Mineral resource of the month: germanium

USGS Publications Warehouse

Guberman, David

2010-01-01

The article provides information on germanium, an element with electrical properties between those of a metal and an insulator. Applications of germanium include its use as a component of the glass in fiber-optic cable, in infrared optics devices and as a semiconductor and substrate used in electronic and solar applications. Germanium was first isolated by German chemist Clemens Winkler in 1886 and was named after Winkler's native country. In 2008, the leading sources of primary germanium from coal or zinc include Canada, China and Russia.

Vapor pressure of germanium precursors

NASA Astrophysics Data System (ADS)

Pangrác, J.; Fulem, M.; Hulicius, E.; Melichar, K.; Šimeček, T.; Růžička, K.; Morávek, P.; Růžička, V.; Rushworth, S. A.

2008-11-01

The vapor pressure of two germanium precursors tetrakis(methoxy)germanium (Ge(OCH 3) 4, CASRN 992-91-6) and tetrakis(ethoxy)germanium (Ge(OC 2H 5) 4, CASRN 14165-55-0) was determined using a static method in the temperature range 259-303 K. The experimental vapor pressure data were fit with the Antoine equation. The mass spectra before and after degassing by vacuum distillation at low temperature are also reported and discussed.

A guidebook for using automatic passenger counter data for National Transit Database (NTD) reporting

DOT National Transportation Integrated Search

2010-12-01

This document provides guidance for transit agencies to use data from their automatic passenger counters (APCs) for reporting to the National Transit Database (NTD). It first reviews both the traditional data requirements on the data items to be repo...

Hydrothermal synthesis of bismuth germanium oxide

DOEpatents

Boyle, Timothy J.

2016-12-13

A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radamson, H. H.; Kolahdouz, M.; Shayestehaminzadeh, S.

2010-11-29

SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100x100 {mu}m{sup 2} pixel sizes and low noise constant (K{sub 1/f}) value of 4.4x10{sup -15} is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.

MAJORANA Collaboration's experience with germanium detectors

DOE PAGES

Mertens, S.; Abgrall, N.; Avignone, F. T.; ...

2015-05-01

The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANAmore » mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.« less

Investigation of the difficulties associated with the use of lead telluride and other II - IV compounds for thin film thermistors

NASA Technical Reports Server (NTRS)

Mclennan, W. D.

1975-01-01

The fabrication of thermistors was investigated for use as atmospheric temperature sensors in meteorological rocket soundings. The final configuration of the thin film thermistor is shown. The composition and primary functions of the six layers of the sensor are described. A digital controller for thin film deposition control is described which is capable of better than .1 A/sec rate control. The computer program modules for digital control of thin film deposition processing are included.

Slow Crack Growth of Germanium

NASA Technical Reports Server (NTRS)

Salem, Jon

2016-01-01

The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A=1.7), it is not as anisotropic as SiC, NiAl, or Cu, as evidence by consistent fracture toughness on the 100, 110, and 111 planes. Germanium does not exhibit significant slow crack growth in distilled water. (n=100). Practical values for engineering design are a fracture toughness of 0.7 MPam and a Weibull modulus of m=6+/-2. For well ground and reasonable handled coupons, fracture strength should be greater than 30 MPa.

Investigation of electrical noise in selenium-immersed thermistor bolometers

NASA Technical Reports Server (NTRS)

Tarpley, J. L.; Sarmiento, P. D.

1980-01-01

The selenium immersed, thermistor bolometer, IR detector failed due to spurious and escalating electrical noise outburst as a function of time at elevated temperatures during routine ground based testing in a space simulated environment. Spectrographic analysis of failed bolometers revealed selenium pure zones in the insulating selenium arsenic (Se-As) glass film which surrounds the active sintered Mn, Ni, Co oxide flake. The selenium pure film was identified as a potentially serious failure mechanism. Significant changes were instituted in the manufacturing techniques along with more stringent process controls which eliminated the selenium pure film and successfully produced 22study bolometers.

A design of an interface board between a MRC thermistor probe and a personal computer.

DOT National Transportation Integrated Search

2013-09-01

The main purpose of this project was to design and build a prototype of an interface board between an MRC temperature probe : (thermistor array) and a personal laptop computer. This interface board replaces and significantly improve the capabilities ...

Epitaxial Deposition Of Germanium Doped With Gallium

NASA Technical Reports Server (NTRS)

Huffman, James E.

1994-01-01

Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

A Low-Cost Thermistor Device for Measurements of Metabolic Heat in Yeast Cells in Suspension.

ERIC Educational Resources Information Center

Keeling, Richard P.

1980-01-01

Provides illustrated directions for the construction and use of a low-cost thermistor device. Attached to a servo-type millivolt chart recorder, the device will record minute temperature changes and will simulate data obtained from an oxygen polarograph. Includes results of experiments with baker's yeast. (Author/CS)

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Recovery of germanium-68 from irradiated targets

DOEpatents

Phillips, Dennis R.; Jamriska, Sr., David J.; Hamilton, Virginia T.

1993-01-01

A process for selective separation of germanium-68 from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, contacting the first ion-containing solution with a cationic resin whereby ions selected from the group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in a second ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the first resin, adjusting the pH of the second ion-containing solution to within a range of from about 0.7 to about 3.0, adjusting the soluble metal halide concentration in the second ion-containing solution to a level adapted for subsequent separation of germanium, contacting the pH-adjusted, soluble metal halide-containing second ion-containing solution with a dextran-based material whereby germanium ions are separated by the dextran-based material, and recovering the germanium from the dextran-based material, preferably by distillation.

Germanium resistance thermometer calibration at superfluid helium temperatures

NASA Technical Reports Server (NTRS)

Mason, F. C.

1985-01-01

The rapid increase in resistance of high purity semi-conducting germanium with decreasing temperature in the superfluid helium range of temperatures makes this material highly adaptable as a very sensitive thermometer. Also, a germanium thermometer exhibits a highly reproducible resistance versus temperature characteristic curve upon cycling between liquid helium temperatures and room temperature. These two factors combine to make germanium thermometers ideally suited for measuring temperatures in many cryogenic studies at superfluid helium temperatures. One disadvantage, however, is the relatively high cost of calibrated germanium thermometers. In space helium cryogenic systems, many such thermometers are often required, leading to a high cost for calibrated thermometers. The construction of a thermometer calibration cryostat and probe which will allow for calibrating six germanium thermometers at one time, thus effecting substantial savings in the purchase of thermometers is considered.

Epstein-Barr virus nuclear protein 3C binds to the N-terminal (NTD) and beta trefoil domains (BTD) of RBP/CSL; Only the NTD interaction is essential for lymphoblastoid cell growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calderwood, Michael A.; Lee, Sungwook; Holthaus, Amy M.

Association of EBV nuclear proteins EBNA2, EBNA3A and EBNA3C with RBP/CSL, is essential for lymphoblastoid cell line (LCL) proliferation. Conserved residues in the EBNA3 homology domain, required for RBP/CSL interaction, lack the W{Phi}P motif that mediates EBNA2 and Notch binding to the RBP/CSL beta-trefoil domain (BTD). We map RBP/CSL interacting residues within EBNA3A(aa128-204) and EBNA3C(aa211-233). The EBNA3A results are consistent with an earlier report (aa125-222), but the EBNA3C domain is unexpectedly small and includes a 'WTP' sequence. This EBNA3C WTP motif confers RBP/CSL binding in vitro, in yeast, and in mammalian cells. Further, an EBNA3C WTP {yields} STP(W227S) mutation impairedmore » BTD binding whereas EBNA3 homology domain mutations disrupted RBP/CSL N-terminal domain (NTD) binding. WTP was not essential for EBNA3C repression of EBNA2 in reporter assays or for maintenance of LCL growth. Our results indicate that EBNA3 proteins interact with multiple RBP/CSL domains, but only NTD interactions are required for LCL growth.« less

Electronic considerations for externally segmented germanium detectors

NASA Technical Reports Server (NTRS)

Madden, N. W.; Landis, D. A.; Goulding, F. S.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Malone, D. F.; Pollard, M. J.

1991-01-01

The dominant background source for germanium gamma ray detector spectrometers used for some astrophysics observations is internal beta decay. Externally segmented germanium gamma ray coaxial detectors can identify beta decay by localizing the event. Energetic gamma rays interact in the germanium detector by multiple Compton interactions while beta decay is a local process. In order to recognize the difference between gamma rays and beta decay events, the external electrode (outside of detector) is electrically partitioned. The instrumentation of these external segments and the consequence with respect to the spectrometer energy signal is examined.

The effect of sintering temperature on electrical characteristics of Fe2TiO5/Nb2O5 ceramics for NTC thermistor

NASA Astrophysics Data System (ADS)

Wiendartun, Risdiana, Fitrilawati, Siregar, R. E.

2016-02-01

A study on the fabrication of Iron Titanium Oxide (Fe2TiO5) ceramics for negative temperature coefficient (NTC) thermistors has been carried out, in order to know the effect of sintering temperature on the electrical characteristic of 1.0 % mole Nb2O5 doped Fe2TiO5 ceramics.These ceramics were made by mixing commercial powders of Fe2O3, TiO2 and Nb2O5 with proportional composition to produce Fe2TiO5 based ceramic. The raw pellet was sintered at 1000 °C, 1100 °C and 1200 °C temperature for 2 hours in air. Analysis of the microstructure and crystal structure were performed by using a scanning electron microscope (SEM) and x-ray diffraction (XRD) respectively. XRD spectra showed that the crystal structure of all ceramics of Fe2TiO5 made at various sintering temperatures are orthorhombic. The SEM images showed that the grain size of pellet ceramics increase with increasing sintering temperatures. From electrical resistances data that was measured at temperature 30-300 °C, it is found that the value of thermistor constant (B), activation energy (Ea), thermistor sensitivity (α) and room temperature resistance (RRT) decreases with respect to the increasing of sintering temperature. The fabricated Fe2TiO5 ceramics have thermistor constants (B = 6394-6959 K). This can be applied as temperature sensor, and will fulfill the market requirement.

Front End Spectroscopy ASIC for Germanium Detectors

NASA Astrophysics Data System (ADS)

Wulf, Eric

Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

Mineral resource of the month: germanium

USGS Publications Warehouse

Jorgenson, John D.

2003-01-01

Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

All-inorganic Germanium nanocrystal films by cationic ligand exchange

DOE PAGES

Wheeler, Lance M.; Nichols, Asa W.; Chernomordik, Boris D.; ...

2016-01-21

In this study, we introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport inmore » germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.« less

Crystal growth of HVPE-GaN doped with germanium

NASA Astrophysics Data System (ADS)

Iwinska, M.; Takekawa, N.; Ivanov, V. Yu.; Amilusik, M.; Kruszewski, P.; Piotrzkowski, R.; Litwin-Staszewska, E.; Lucznik, B.; Fijalkowski, M.; Sochacki, T.; Teisseyre, H.; Murakami, H.; Bockowski, M.

2017-12-01

Crystallization by hydride vapor phase epitaxy method of gallium nitride single crystals doped with germanium and properties of the obtained material are described in this paper. Growth was performed in hydrogen and nitrogen carrier gas. The results were studied and compared. Influence of different flows of germanium tetrachloride, precursor of germanium, on the grown crystals was investigated. Ammonothermal GaN substrates were used as seeds for crystallization. Structural, electrical, and optical properties of HVPE-GaN doped with germanium are presented and discussed in detail. They were compared to properties of HVPE-GaN doped with silicon and also grown on native seeds of high quality.

Germanium soup

NASA Astrophysics Data System (ADS)

Palmer, Troy A.; Alexay, Christopher C.

2006-05-01

This paper addresses the variety and impact of dispersive model variations for infrared materials and, in particular, the level to which certain optical designs are affected by this potential variation in germanium. This work offers a method for anticipating and/or minimizing the pitfalls such potential model variations may have on a candidate optical design.

Particle identification using digital pulse shape discrimination in a nTD silicon detector with a 1 GHz sampling digitizer

NASA Astrophysics Data System (ADS)

Mahata, K.; Shrivastava, A.; Gore, J. A.; Pandit, S. K.; Parkar, V. V.; Ramachandran, K.; Kumar, A.; Gupta, S.; Patale, P.

2018-06-01

In beam test experiments have been carried out for particle identification using digital pulse shape analysis in a 500 μm thick Neutron Transmutation Doped (nTD) silicon detector with an indigenously developed FPGA based 12 bit resolution, 1 GHz sampling digitizer. The nTD Si detector was used in a low-field injection setup to detect light heavy-ions produced in reactions of ∼ 5 MeV/A 7Li and 12C beams on different targets. Pulse height, rise time and current maximum have been obtained from the digitized charge output of a high bandwidth charge and current sensitive pre-amplifier. Good isotopic separation have been achieved using only the digitized charge output in case of light heavy-ions. The setup can be used for charged particle spectroscopy in nuclear reactions involving light heavy-ions around the Coulomb barrier energies.

Germanium Resistance Thermometer For Subkelvin Temperatures

NASA Technical Reports Server (NTRS)

Castles, Stephen H.

1993-01-01

Improved germanium resistance thermometer measures temperatures as small as 0.01 K accurately. Design provides large area for electrical connections (to reduce electrical gradients and increase sensitivity to changes in temperatures) and large heat sink (to minimize resistance heating). Gold pads on top and bottom of germanium crystal distribute electrical current and flow of heat nearly uniformly across crystal. Less expensive than magnetic thermometers or superconducting quantum interference devices (SQUID's) otherwise used.

Structural Design Parameters for Germanium

NASA Technical Reports Server (NTRS)

Salem, Jon; Rogers, Richard; Baker, Eric

2017-01-01

The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A* 1.7), it is not as anisotropic as SiC, NiAl, or Cu. Thus the fracture toughness was similar on the 100, 110, and 111 planes, however, measurements associated with randomly oriented grinding cracks were 6 to 30 higher. Crack extension in ring loaded disks occurred on the 111 planes due to both the lower fracture energy and the higher stresses on stiff 111 planes. Germanium exhibits a Weibull scale effect, but does not exhibit significant slow crack growth in distilled water. (n 100), implying that design for quasi static loading can be performed with scaled strength statistics. Practical values for engineering design are a fracture toughness of 0.69 0.02 MPam (megapascals per square root meter) and a Weibull modulus of m 6 2. For well ground and reasonable handled coupons, average fracture strength should be greater than 40 megapascals. Aggregate, polycrystalline elastic constants are Epoly 131 gigapascals, vpoly 0.22.

The germination of germanium

NASA Astrophysics Data System (ADS)

Burdette, Shawn C.; Thornton, Brett F.

2018-02-01

Shawn C. Burdette and Brett F. Thornton explore how germanium developed from a missing element in Mendeleev's periodic table to an enabler for the information age, while retaining a nomenclature oddity.

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

NASA Technical Reports Server (NTRS)

Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

1989-01-01

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Bottom-up assembly of metallic germanium.

PubMed

Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

2015-08-10

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Bottom-up assembly of metallic germanium

NASA Astrophysics Data System (ADS)

Scappucci, Giordano; Klesse, Wolfgang M.; Yeoh, Lareine A.; Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.; Jaeger, David L.; Capellini, Giovanni; Simmons, Michelle Y.; Hamilton, Alexander R.

2015-08-01

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

Neutron-transmutation-doped germanium bolometers

NASA Technical Reports Server (NTRS)

Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

1983-01-01

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Status of NTD Ge bolometer material and devices

NASA Technical Reports Server (NTRS)

Haller, E. E.; Haegel, N. M.; Park, I. S.

1986-01-01

The first IR Detector Technology Workshop took place at NASA Ames Research Center on July 12 and 13, 1983. The conclusions presented at that meeting are still valid. More was learned about the physics of hopping conduction at very low temperatures which will be important for bolometer design and operation at ever decreasing temperatures. Resistivity measurements were extended down to 50 mK. At such low temperatures, precise knowledge of the neutron capture cross sections sigma (sub n) of the various Ge isotopes is critical if one is to make an accurate prediction of the dopant concentrations and compensation, and therefore resistivity, that will result from a given irradiation. An empirical approach for obtaining the desired resistivity material is described and the process of conducting a set of experiments which will improve the knowledge of the effective sigma (sub n) values for a given location in a particular reactor is discussed. A wider range of NTD Ge samples is now available. Noise measurements on bolometers with ion implanted contacts show the no 1/f noise component appears down to 1 Hz and probably lower.

Near-infrared emission from mesoporous crystalline germanium

NASA Astrophysics Data System (ADS)

Boucherif, Abderraouf; Korinek, Andreas; Aimez, Vincent; Arès, Richard

2014-10-01

Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

Commentary: restarting NTD programme activities after the Ebola outbreak in Liberia.

PubMed

Thomas, Brent C; Kollie, Karsor; Koudou, Benjamin; Mackenzie, Charles

2017-05-01

It is widely known that the recent Ebola Virus Disease (EVD) in West Africa caused a serious disruption to the national health system, with many of ongoing disease focused programmes, such as mass drug administration (MDA) for onchocerciasis (ONC), lymphatic filariasis (LF) and schistosomiasis (SCH), being suspended or scaled-down. As these MDA programmes attempt to restart post-EVD it is important to understand the challenges that may be encountered. This commentary addresses the opinions of the major health sectors involved, as well as those of community members, regarding logistic needs and challenges faced as these important public health programmes consider restarting. There appears to be a strong desire by the communities to resume NTD programme activities, although it is clear that some important challenges remain, the most prominent being those resulting from the severe loss of trained staff.

Modeling of dislocation dynamics in germanium Czochralski growth

NASA Astrophysics Data System (ADS)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

Crucible-free pulling of germanium crystals

NASA Astrophysics Data System (ADS)

Wünscher, Michael; Lüdge, Anke; Riemann, Helge

2011-03-01

Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium melt is more than twice as dense as liquid silicon, which could destabilize a floating zone. Additionally, the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth. We found that the lower heat radiation of Ge can be compensated by the increased convective cooling of a helium atmosphere instead of the argon ambient. Under these conditions, the screw-like growth could be avoided. Unfortunately, the helium cooling deteriorates the melting behavior of the feed rod. Spikes appear along the open melt front, which touch on the induction coil. In order to improve the melting behavior, we used a lamp as a second energy source as well as a mixture of Ar and He. With this, we found a final solution for growing stable crystals from germanium by using both gases in different parts of the furnace. The experimental work is accompanied by the simulation of the stationary temperature field. The commercially available software FEMAG-FZ is used for axisymmetric calculations. Another tool for process development is the lateral photo-voltage scanning (LPS), which can determine the shape of the solid-liquid phase boundary by analyzing the growth striations in a lateral cut of a grown crystal. In addition to improvements of the process, these measurements can be compared with the calculated results and, hence, conduce to validate the calculation.

Low-temperature irradiation-induced defects in germanium: In situ analysis

NASA Astrophysics Data System (ADS)

Mesli, A.; Dobaczewski, L.; Nielsen, K. Bonde; Kolkovsky, Vl.; Petersen, M. Christian; Larsen, A. Nylandsted

2008-10-01

The electronic properties of defects resulting from electron irradiation of germanium at low temperatures have been investigated. The recent success in preparing n+p junctions on germanium has opened a new opportunity to address fundamental questions regarding point defects and their related energy levels by allowing an access to the lower half of the band gap. In this work we apply various space-charge capacitance-transient spectroscopy techniques connected on line with the electron-beam facility. In n -type germanium we identify a level at about 0.14 eV below the conduction band whose properties resemble in many respects those of a defect assigned previously to the close vacancy-interstitial or Frenkel pair. This pair seems to annihilate over a small barrier at about 70 K, and its stability is particularly sensitive to the irradiation temperature and energy. We also observe two coupled levels at 0.08 and 0.24 eV below the conduction band stable up to 160 K. Recent independent theoretical work has predicted the existence of the single and double donor of the germanium interstitial with energy levels matching exactly these two values. Given these identifications hold, they mark a major difference with silicon where both the Frenkel pair and self-interstitial have never been caught. In p -type germanium, two levels were found. The shallower one, located at about 0.14 eV above the valence band, is tentatively assigned to the vacancy. It exhibits a field-driven instability at about 80 K making its analysis quite difficult. The application of a reverse bias, required by the space-charge spectroscopy, leads to a strong drift process sweeping this defect out of the observation area without necessarily provoking its annealing. Unlike silicon, in which the vacancy has four charge states, only one vacancy-related level seems to exist in germanium and this level is very likely a double acceptor. Finally, a very peculiar observation is made on a hole midgap trap, which, in

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

PubMed

Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

2015-06-29

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

Advances in fractal germanium micro/nanoclusters induced by gold: microstructures and properties.

PubMed

Chen, Zhiwen; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

2014-02-01

Germanium materials are a class of unique semiconductor materials with widespread technological applications because of their valuable semiconducting, electrical, optical, and thermoelectric power properties in the fields of macro/mesoscopic materials and micro/nanodevices. In this review, we describe the efforts toward understanding the microstructures and various properties of the fractal germanium micro/nanoclusters induced by gold prepared by high vacuum thermal evaporation techniques, highlighting contributions from our laboratory. First, we present the integer and non-integer dimensional germanium micro/nanoclusters such as nanoparticles, nanorings, and nanofractals induced by gold and annealing. In particular, the nonlinear electrical behavior of a gold/germanium bilayer film with the interesting nanofractal is discussed in detail. In addition, the third-order optical nonlinearities of the fractal germanium nanocrystals embedded in gold matrix will be summarized by using the sensitive and reliable Z-scan techniques aimed to determine the nonlinear absorption coefficient and nonlinear refractive index. Finally, we emphasize the thermoelectric power properties of the gold/germanium bilayer films. The thermoelectric power measurement is considered to be a more effective method than the conductivity for investigating superlocalization in a percolating system. This research may provide a novel insight to modulate their competent performance and promote rational design of micro/nanodevices. Once mastered, germanium thin films with a variety of fascinating micro/nanoclusters will offer vast and unforeseen opportunities in the semiconductor industry as well as in other fields of science and technology.

Hydrothermal germanium over the southern East pacific rise.

PubMed

Mortlock, R A; Froelich, P N

1986-01-03

Germanium enrichment in the oceanic water column above the southern axis of the East Pacific Rise results from hydrothermal solutions emanating from hot springs along the rise crest. This plume signature provides a new oceanic tracer of reactions between seawater and sea floor basalts during hydrothermal alteration. In contrast to the sharp plumes of (3)He and manganese, the germanium plume is broad and diffuse, suggesting the existence of pervasive venting of low-temperature solutions off the ridge axis.

Adhesion and friction behavior of group 4 elements germanium, silicon, tin, and lead

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1975-01-01

Adhesion and friction studies were conducted with thin films of the group IV elements silicon, germanium, tin, and lead ion plated on the nickel (011) substrate. The mating surface was gold (111). Contacts were made for the elements in the clean state and with oxygen present. Adhesion and friction experiments were conducted at very light loads of 1 to 10 g. Sliding was at a speed of 0.7 mm/min. Friction results indicate that the more covalently bonded elements silicon and germanium exhibit lower adhesion and friction than the more metallic bonded tin and lead. The adhesion of gold to germanium was observed, and recrystallization of the transferred gold occurred. Plastic flow of germanium was seen with sliding. Oxygen reduced, but did not eliminate, the adhesion observed with germanium and silicon.

Influence of Containment on the Growth of Germanium-Silicon in Microgravity

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Croll, A.; Sorgenfrei, T.

2017-01-01

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: Float zone growth, Bridgman growth, and Detached Bridgman growth. The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Variable-Temperature Cryostat For Radiation-Damage Testing Of Germanium Detectors

NASA Technical Reports Server (NTRS)

Floyd, Samuel R.; Puc, Bernard P.

1992-01-01

Variable-temperature cryostats developed to study radiation damage to, and annealing of, germanium gamma-ray detectors. Two styles: one accommodates large single detector and one accommodates two medium-sized detectors. New cryostats allow complete testing of large-volume germanium gamma-ray detectors without breaking cryostat vacuum and removing detectors for annealing.

Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

PubMed

Qin, Jinwen; Cao, Minhua

2016-04-20

Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Time integrated optical emission studies of the laser produced germanium plasma

NASA Astrophysics Data System (ADS)

Iqbal, Javed; Ahmed, R.; Baig, M. A.

2017-04-01

We present new time integrated data on the optical emission spectra of laser produced germanium plasma using a Q-switched Nd:YAG laser (1064 nm), power density up to about 5  ×  109 W cm-2 in conjunction with a set of five spectrometers covering a spectral range from 200 nm to 720 nm. Well resolved structure due to the 4p5s  →  4p2 transition array of neutral germanium and a few multiplets of singly ionized germanium have been observed. Plasma temperature has been determined in the range (9000-11 000) K using four different techniques; two line ratio method, Boltzmann plot, Saha-Boltzmann plot and Marotta’s technique whereas electron density has been deduced from the Stark broadened line profiles in the range (0.5-5.0)  ×  1017 cm-3, depending on the laser pulse energy to produce the germanium plasma. Full width at half maximum (FWHM) of a number of neutral and singly ionized germanium lines have been extracted by the Lorentzian fit to the experimentally observed line profiles. In addition, we have compared the experimentally measured relative line strengths for the 4p5s 3P0,1,2  →  4p2 3P0,1,2 multiplet with that calculated in the LS-coupling scheme revealing that the intermediate coupling scheme is more appropriate for the level designations in germanium.

Thin metal thermistors for shock temperature measurements of polymers

NASA Astrophysics Data System (ADS)

Taylor, N. E.; Williamson, D. M.; Picard, A.; Cunningham, L. K.; Jardine, A. P.

2015-06-01

Equations of state can be used to predict the relationship between pressure, volume and temperature. However, in shock physics, they are usually only constrained by experimental observations of pressure and volume. Direct observation of temperature in a shock is therefore valuable in constraining equations of state. Bloomquist and Sheffield (1980, 1981) and Rosenberg and Partom (1984) have attempted such observations in poly(methyl methacrylate) (PMMA). However, their results disagree strongly above 2 GPa shock pressure. The present authors previously presented an improved fabrication technique, to examine this outstanding issue. This technique made use of the fact that the electrical resistivity of most metals is a known function of both pressure and temperature. By fabricating a thin metal thermistor gauge and measuring its change in resistance during a shock experiment of known pressure, its temperature can be recovered. Heat transfer into the gauge depends strongly on the gauge dimensions and the thermal conductivity of the shocked PMMA. Here we present several improvements to the technique. By varying the gauge thickness over the range 100 nm to 10 μ m we assess the heat transfer into the gauge.

Bridgman Growth of Germanium

NASA Technical Reports Server (NTRS)

Szofran, F. R.; Volz, M. P.; Cobb, S. D.; Motakef, S.

1997-01-01

The high-magnetic-field crystal growth facility at the Marshall Space Flight Center will be briefly described. This facility has been used to grow bulk germanium by the Bridgman technique in magnetic fields up to 5 Tesla. The results of investigations of ampoule material on the interface shape and thermal field applied to the melt on stability against convection will be discussed.

High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

NASA Technical Reports Server (NTRS)

Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

1993-01-01

Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

Oriented bottom-up growth of armchair graphene nanoribbons on germanium

DOEpatents

Arnold, Michael Scott; Jacobberger, Robert Michael

2016-03-15

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

Germanium: giving microelectronics an efficiency boost

USGS Publications Warehouse

Mercer, Celestine N.

2015-07-30

Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2011 CFR

2011-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2014 CFR

2014-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2012 CFR

2012-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

Code of Federal Regulations, 2013 CFR

2013-07-01

... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

Development of a new type of germanium detector for dark matter searches

NASA Astrophysics Data System (ADS)

Wei, Wenzhao

Monte Carlo simulation is an important tool used to develop a better understanding of important physical processes. This thesis describes three Monte Carlo simulations used to understand germanium detector response to low energy nuclear recoils and radiogenic backgrounds for direct dark matter searches. The first simulation is the verification of Barker-Mei model, a theoretical model for calculating the ionization efficiency for germanium detector for the energy range of 1 - 100 keV. Utilizing the shape analysis, a bin-to-bin comparison between simulation and experimental data was performed for verifying the accuracy of the Barker-Mei model. A percentage difference within 4% was achieved between data and simulation, which showed the validity of the Barker-Mei model. The second simulation is the study of a new type of germanium detector for n/gamma discrimination at 77 K with plasma time difference in pulse shape. Due to the poor time resolution, conventional P-type Point Contact (PPC) and coaxial germanium detectors are not capable of discriminating nuclear recoils from electron recoils. In this thesis, a new idea of using great detector granularity and plasma time difference in pulse shape to discriminate nuclear recoils from electron recoils with planar germanium detectors in strings was discussed. The anticipated sensitivity of this new detector array is shown for detecting dark matter. The last simulation is a study of a new type of germanium-detector array serving as a PMT screening facility for ultra-low background dark matter experiments using noble liquid xenon as detector material such LUX/LZ and XENON100/XENON1T. A well-shaped germanium detector array and a PMT were simulated to study the detector response to the signal and background for a better understanding of the radiogenic gamma rays from PMTs. The detector efficiency and other detector performance were presented in this work.

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

NASA Technical Reports Server (NTRS)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

NASA Astrophysics Data System (ADS)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Germanium geochemistry and mineralogy

USGS Publications Warehouse

Bernstein, L.R.

1985-01-01

Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

Quantum interference magnetoconductance of polycrystalline germanium films in the variable-range hopping regime

NASA Astrophysics Data System (ADS)

Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Zhan, Zhiqiang; Wu, Weidong

2018-06-01

Direct evidence of quantum interference magnetotransport in polycrystalline germanium films in the variable-range hopping (VRH) regime is reported. The temperature dependence of the conductivity of germanium films fulfilled the Mott VRH mechanism with the form of ? in the low-temperature regime (?). For the magnetotransport behaviour of our germanium films in the VRH regime, a crossover, from negative magnetoconductance at the low-field to positive magnetoconductance at the high-field, is observed while the zero-field conductivity is higher than the critical value (?). In the regime of ?, the magnetoconductance is positive and quadratic in the field for some germanium films. These features are in agreement with the VRH magnetotransport theory based on the quantum interference effect among random paths in the hopping process.

Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium.

DTIC Science & Technology

1986-09-30

choice or a process for growing Ge N , layers on germa - nium. a number of workers have employed various de. mum. posited layers on germanium. While...N00014-84-K-0459 V6 Office of Naval Research (Mr. Max N . Yoder, Electronic Division) 4: 800 North Quincy Street Arlington, Virginia 22217 Interfacial...z4) 3 Co0 C14 CM- Lfl n X sj E 𔃺 01 N S) Li (m* m n1 Ln m CU OT X)-(, (L 0IX) D/13si E- 1 0n CtZ) 4-4C ~ IN I- I L L0tX Cd) JN N in - Growth of

Naturally occurring vapor-liquid-solid (VLS) Whisker growth of germanium sulfide

USGS Publications Warehouse

Finkelman, R.B.; Larson, R.R.; Dwornik, E.J.

1974-01-01

The first naturally occurring terrestrial example of vapor-liquid-solid (VLS) growth has been observed in condensates from gases released by burning coal in culm banks. Scanning electron microscopy, X-ray diffraction, and energy dispersive analysis indicate that the crystals consist of elongated rods (??? 100 ??m) of germanium sulfide capped by bulbs depleted in germanium. ?? 1974.

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

NASA Technical Reports Server (NTRS)

Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

2002-01-01

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

Filterability of the suspension from germanium precipitation with aqueous tannin extract solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailov, N.F.; Petropol'skii, V.M.; Semenenko, L.E.

1978-01-01

We have already described the use of a neutral aqueous solution of tannin extract to recover germanium from collecting-mains liquor in coking plants. Further pilot commercial trials have encountered problems with the poor filterability of the precipitate obtained when germanium is extracted with this reagent in alkaline media. There are published references to the colloidal nature of the precipitated tannin-germanium complex. It is also known that the alkalinity of the medium influences the degree of association in colloidal systems to a marked extent. Accordingly, special research was needed to establish the relationship between the pH of the precipitation medium andmore » the filterability of the germanium deposit. Samples of collecting-mains liquor were taken from one of the southern coking plants to determine the optimum filtration behavior. The collecting-mains liquor should first be purged of volatile ammonia and then adjusted to pH = 6.5 to 6.7 for precipitation.« less

Germanium precipitation from collecting-mains liquor with tannin extract in an alkaline medium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Medvedev, K.P.; Mikhailov, N.F.; Petrapol'skaya, V.M.

1976-01-01

It is proposed to precipitate germanium in a slightly alkaline medium, with a neutral solution of tannin extract in aqueous alkali. The effects of various factors on germanium recovery from collecting-mains liquors have been studied.

Germanium, Arsenic, and Selenium Abundances in Metal-poor Stars

NASA Astrophysics Data System (ADS)

Roederer, Ian U.

2012-09-01

The elements germanium (Ge, Z = 32), arsenic (As, Z = 33), and selenium (Se, Z = 34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 <= [Fe/H] <= -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios remain roughly constant. These data do not directly indicate the origin of germanium, arsenic, and selenium at low metallicity, but they suggest that the weak and main components of the s-process are not likely sources. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from the data archive at the Space Telescope Science Institute. STScI is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. This research made use of StarCAT, hosted by the Mikulski Archive at the Space Telescope Science Institute (MAST). These data are associated with Programs GO-7348, GO-7433, GO-8197, GO-9048, GO-9455, and GO-9804.Based on data obtained from the European Southern Observatory (ESO) Science Archive Facility. These data are associated with Programs 67.D-0439(A), 074.C-0364(A), 076.B-0055(A), and 080.D-0347(A).This research has made use of the Keck Observatory Archive (KOA), which is operated by

Layout optimization of DRAM cells using rigorous simulation model for NTD

NASA Astrophysics Data System (ADS)

Jeon, Jinhyuck; Kim, Shinyoung; Park, Chanha; Yang, Hyunjo; Yim, Donggyu; Kuechler, Bernd; Zimmermann, Rainer; Muelders, Thomas; Klostermann, Ulrich; Schmoeller, Thomas; Do, Mun-hoe; Choi, Jung-Hoe

2014-03-01

DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array. Resolution Enhancement Techniques (RET) are used to optimize the periodic pattern process performance. Computational Lithography such as source mask optimization (SMO) to find the optimal off axis illumination and optical proximity correction (OPC) combined with model based SRAF placement are applied to print patterns on target. For 20nm Memory Cell optimization we see challenges that demand additional tool competence for layout optimization. The first challenge is a memory core pattern of brick-wall type with a k1 of 0.28, so it allows only two spectral beams to interfere. We will show how to analytically derive the only valid geometrically limited source. Another consequence of two-beam interference limitation is a "super stable" core pattern, with the advantage of high depth of focus (DoF) but also low sensitivity to proximity corrections or changes of contact aspect ratio. This makes an array edge correction very difficult. The edge can be the most critical pattern since it forms the transition from the very stable regime of periodic patterns to non-periodic periphery, so it combines the most critical pitch and highest susceptibility to defocus. Above challenge makes the layout correction to a complex optimization task demanding a layout optimization that finds a solution with optimal process stability taking into account DoF, exposure dose latitude (EL), mask error enhancement factor (MEEF) and mask manufacturability constraints. This can only be achieved by simultaneously considering all criteria while placing and sizing SRAFs and main mask features. The second challenge is the use of a negative tone development (NTD) type resist, which has a strong resist effect and is difficult to characterize experimentally due to negative resist profile taper angles that perturb CD at bottom characterization by

The Effect of MnO2 Content and Sintering Atmosphere on The Electrical Properties of Iron Titanium Oxide NTC Thermistors using Yarosite

NASA Astrophysics Data System (ADS)

Wiendartun; Gustaman Syarif, Dani

2017-02-01

The effect of MnO2 content and sintering atmosphere on the characteristics of Fe2TiO5 ceramics for Negative Thermal Coefficient (NTC) thermistors by using Fe2O3 derived from yarosite has been studied. The ceramics were produced by pressing a homogeneous mixture of Fe2O3, TiO2 and MnO2 (0-2.0 w/o) powders in appropriate proportions to produce Fe2TiO5 based ceramics and sintering the pressed powder at 1100-1200°C for 3 hours in air, O2 and N2 gas. Electrical characterization was done by measuring electrical resistivity of the sintered ceramics at various temperatures from 30°C to 200°C. Microstructure and structural analyses were also carried out by using an scanning electron microscope (SEM) and x-ray diffraction (XRD). The XRD data showed that the pellets crystallize in orthorhombic. The presence of second phase could not be identified from the XRD analyses. The SEM images showed that the grain size of pellet ceramics increase with increasing of MnO2 addition, and the grains size of the ceramic sintered in oxygen gas is smaller than sintered in nitrogen gas. Electrical data showed that the value of room temperature resistance (RRT) tend to decrease with respect to the increasing of MnO2 addition and the pellet ceramics sintered in oxygen gas had the largest thermistor constant (B), activation energy (Ea), sensitivity (α) and room temperature resistance (RRT), compared to the sintered in nitrogen gas. From the electrical characteristics data, it was known that the electrical characteristics of the Fe2TiO5 pellet ceramics followed the NTC characteristic. The fabricated Fe2TiO5 ceramics have thermistor constants (B = 2207-7145K). This can be applied as temperature sensor, and will fulfill the market requirement.

Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

NASA Technical Reports Server (NTRS)

Buckley, D. H.; Spalvins, T.

1977-01-01

Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

NASA Technical Reports Server (NTRS)

Raag, V.

1975-01-01

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Germanium layers grown by zone thermal crystallization from a discrete liquid source

NASA Astrophysics Data System (ADS)

Yatsenko, A. N.; Chebotarev, S. N.; Lozovskii, V. N.; Mohamed, A. A. A.; Erimeev, G. A.; Goncharova, L. M.; Varnavskaya, A. A.

2017-11-01

It is proposed and investigated a method for growing thin uniform germanium layers onto large silicon substrates. The technique uses the hexagonally arranged local sources filled with liquid germanium. Germanium evaporates on very close substrate and in these conditions the residual gases vapor pressure highly reduces. It is shown that to achieve uniformity of the deposited layer better than 97% the critical thickness of the vacuum zone must be equal to l cr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.

Germanium and Tin Based Anode Materials for Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Ji, Dongsheng

The discovery of safe anode materials with high energy density for lithium-ion batteries has always been a significant topic. Group IV elements have been under intensive study for their high capability of alloying with lithium. Batteries with graphite and tin based anode material have already been applied in cell phones and vehicles. In order to apply group IV elements, their dramatic volume change during lithiation and delithiation processes is the key point to work on. Reducing the particle size is the most common method to buffer the volume expansion. This strategy has been applied on both germanium and tin based materials. Germanium based anode material has been made by two different synthesis methods. The amorphous Ge-C-Ti composite material was made by ball milling method and performed much better than other germanium alloy including Ge-Mg, Ge-Fe and Ge-Fe.Germanium sphere nano particles with diameter of around 50 nm have been made by solution method. After ball milled with graphite, the resulted product performed stable capacity over 500 mAh˙g-1 for more than 20 cycles. Ball milled graphite in the composite plays an important role of buffering volume change and stabilizing germanium. Sn-Fe alloy is one of the feasible solutions to stabilize tin. Sn 2Fe-C composite has been made by ball milling method. After optimizations of the ratio of precursors, reaction time, milling balls and electrolyte additives, the electrochemistry performance was improved. The anode performed 420 mAh˙ -1 at 1.0 mA/cm2 and maintained its structure after cycling at 2.0 mA/cm2. At 0.3 mA/cm2 cycling rate, the anode performed 978 mAh/cm3 after 500 cycles, which still exceeds the theoretical capacity of graphite.

Germanium detector vacuum encapsulation

NASA Technical Reports Server (NTRS)

Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

1991-01-01

This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

Synthesis and photoluminescence of ultra-pure germanium nanoparticles

NASA Astrophysics Data System (ADS)

Chivas, R.; Yerci, S.; Li, R.; Dal Negro, L.; Morse, T. F.

2011-09-01

We have used aerosol deposition to synthesize defect and micro-strain free, ultra-pure germanium nanoparticles. Transmission electron microscopy images show a core-shell configuration with highly crystalline core material. Powder X-ray diffraction measurements verify the presence of highly pure, nano-scale germanium with average crystallite size of 30 nm and micro-strain of 0.058%. X-ray photoelectron spectroscopy demonstrates that GeO x ( x ⩽ 2) shells cover the surfaces of the nanoparticles. Under optical excitation, these nanoparticles exhibit two separate emission bands at room temperature: a visible emission at 500 nm with 0.5-1 ns decay times and an intense near-infrared emission at 1575 nm with up to ˜20 μs lifetime.

Organotrichlorogermane synthesis by the reaction of elemental germanium, tetrachlorogermane and organic chloride via dichlorogermylene intermediate.

PubMed

Okamoto, Masaki; Asano, Takuya; Suzuki, Eiichi

2004-08-07

Organotrichlorogermanes were synthesized by the reaction of elemental germanium, tetrachlorogermane and organic chlorides, methyl, propyl, isopropyl and allyl chlorides. Dichlorogermylene formed by the reaction of elemental germanium with tetrachlorogermane was the reaction intermediate, which was inserted into the carbon-chlorine bond of the organic chloride to give organotrichlorogermane. When isopropyl or allyl chloride was used as an organic chloride, organotrichlorogermane was formed also in the absence of tetrachlorogermane. These chlorides were converted to hydrogen chloride, which subsequently reacted with elemental germanium to give the dichlorogermylene intermediate. The reaction of elemental germanium, tetrachlorogermane and organic chlorides provides a simple and easy method for synthesizing organotrichlorogermanes, and all the raw materials are easily available.

Germanium Requirements for National Defense,

DTIC Science & Technology

1991-07-01

work in this area involves development of hard exterior coating materials that will protect Ge windows but not adversely affect their optical...advanced electronic materials, is used in semiconductor devices, fiber optic systems, and infrared sensors for ships, aircraft, missiles, tanks and anti -tank...infrared sensors for ships, aircraft, missiles, tanks and anti -tank units. Because of its importance in these applications, germanium was added to the

Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Croell, A.

2012-01-01

This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

PubMed Central

Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

2017-01-01

Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material. PMID:28290495

Electron tunnelling into amorphous germanium and silicon.

NASA Technical Reports Server (NTRS)

Smith, C. W.; Clark, A. H.

1972-01-01

Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

Single-Crystal Germanium Core Optoelectronic Fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Xiaoyu; Page, Ryan L.; Chaudhuri, Subhasis

Synthesis and fabrication of high-quality, small-core single-crystal germanium fibers that are photosensitive at the near-infrared and have low optical losses ≈1 dB cm-1 at 2 μm are reported. These fibers have potential applications in fiber-based spectroscopic imaging, nonlinear optical devices, and photodetection at the telecommunication wavelengths.

Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

DOE PAGES

Byrd, Ian; Chen, Hao; Webber, Theron; ...

2015-10-23

We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g -1 capacity (70%) can be retained at a current density of 600 mA g -1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structuremore » can efficiently accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.« less

Cosmogenic activation of germanium used for tonne-scale rare event search experiments

NASA Astrophysics Data System (ADS)

Wei, W.-Z.; Mei, D.-M.; Zhang, C.

2017-11-01

We report a comprehensive study of cosmogenic activation of germanium used for tonne-scale rare event search experiments. The germanium exposure to cosmic rays on the Earth's surface are simulated with and without a shielding container using Geant4 for a given cosmic muon, neutron, and proton energy spectrum. The production rates of various radioactive isotopes are obtained for different sources separately. We find that fast neutron induced interactions dominate the production rate of cosmogenic activation. Geant4-based simulation results are compared with the calculation of ACTIVIA and the available experimental data. A reasonable agreement between Geant4 simulations and several experimental data sets is presented. We predict that cosmogenic activation of germanium can set limits to the sensitivity of the next generation of tonne-scale experiments.

Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting.

PubMed

Lai, Min; Zhang, Xiaodong; Fang, Fengzhou

2017-12-01

Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.

Growth Behavior and Electronic Structure of Noble Metal-Doped Germanium Clusters.

PubMed

Mahtout, Sofiane; Siouani, Chaouki; Rabilloud, Franck

2018-01-18

Structures, energetics, and electronic properties of noble metal-doped germanium (MGe n with M = Cu, Ag, Au; n = 1-19) clusters are systematically investigated by using the density functional theory (DFT) approach. The endohedral structures in which the metal atom is encapsulated inside of a germanium cage appear at n = 10 when the dopant is Cu and n = 12 for M = Ag and Au. While Cu doping enhances the stability of the corresponding germanium frame, the binding energies of AgGe n and AuGe n are always lower than those of pure germanium clusters. Our results highlight the great stability of the CuGe 10 cluster in a D 4d structure and, to a lesser extent, that of AgGe 15 and AuGe 15 , which exhibits a hollow cage-like geometry. The sphere-type geometries obtained for n = 10-15 present a peculiar electronic structure in which the valence electrons of the noble metal and Ge atoms are delocalized and exhibit a shell structure associated with the quasi-spherical geometry. It is found that the coinage metal is able to give both s- and d-type electrons to be reorganized together with the valence electrons of Ge atoms through a pooling of electrons. The cluster size dependence of the stability, the frontier orbital energy gap, the vertical ionization potentials, and electron affinities are given.

Application of vacuum reduction and chlorinated distillation to enrich and prepare pure germanium from coal fly ash.

PubMed

Zhang, Lingen; Xu, Zhenming

2017-01-05

Germanium, as strategic reserve metal, plays critical role in high-tech industry. However, a contradiction of increasing consumption and scarcity of germanium resource is becoming more and more prominent. This paper proposed an integrated process to recycle germanium from coal fly ash. This technological process mainly consisted of two procedures: vacuum reduction with the purposes of enriching germanium and chlorinated distillation with the purposes of purifying germanium. Several highlights are summarized as follows: (i) Separation principle and reaction mechanism were discussed to understand this integrated process. (ii) Optimum designs and product analysis were developed to guide industrial recycling. The appropriate parameters for vacuum reduction process on the basis of response surface methodology (RSM) were 920.53°C and 259.63Pa, with 16.64wt.% reductant, and for the chlorinated distillation process, adding 8mol/l HCl and L/S 7, 8wt.% MnO 2 . The global recovery rate of germanium was 83.48±0.36% for the integrated process. (iii) This process overcomes the shortages of traditional process and shows its efficiency and environmental performance. It is significant in accordance with the "Reduce, Reuse and Recycle Principle" for solid waste and further provides a new opportunity for germanium recovery from waste by environment-friendly way. Copyright © 2016. Published by Elsevier B.V.

Study of the possibility of growing germanium single crystals under low temperature gradients

NASA Astrophysics Data System (ADS)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.; Zhdankov, V. N.

2014-03-01

The possibility of growing germanium single crystals under low temperature gradients in order to produce a dislocation-free material has been studied. Germanium crystals with a dislocation density of about 100-200 cm-2 have been grown in a system with a weight control of crystal growth at maximum axial gradients of about 1.5 K/cm.

Hydrometallurgical recovery of germanium from coal gasification fly ash: pilot plant scale evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arroyo, F.; Fernandez-Pereira, C.; Olivares, J.

2009-04-15

In this article, a hydrometallurgical method for the selective recovery of germanium from fly ash (FA) has been tested at pilot plant scale. The pilot plant flowsheet comprised a first stage of water leaching of FA, and a subsequent selective recovery of the germanium from the leachate by solvent extraction method. The solvent extraction method was based on Ge complexation with catechol in an aqueous solution followed by the extraction of the Ge-catechol complex (Ge(C{sub 6}H{sub 4}O{sub 2}){sub 3}{sup 2-}) with an extracting organic reagent (trioctylamine) diluted in an organic solvent (kerosene), followed by the subsequent stripping of the organicmore » extract. The process has been tested on a FA generated in an integrated gasification with combined cycle (IGCC) process. The paper describes the designed 5 kg/h pilot plant and the tests performed on it. Under the operational conditions tested, approximately 50% of germanium could be recovered from FA after a water extraction at room temperature. Regarding the solvent extraction method, the best operational conditions for obtaining a concentrated germanium-bearing solution practically free of impurities were as follows: extraction time equal to 20 min; aqueous phase/organic phase volumetric ratio equal to 5; stripping with 1 M NaOH, stripping time equal to 30 min, and stripping phase/organic phase volumetric ratio equal to 5. 95% of germanium were recovered from water leachates using those conditions.« less

Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

NASA Astrophysics Data System (ADS)

Purkait, Tapas Kumar

Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

NASA Astrophysics Data System (ADS)

Martineau, F.; Namur, K.; Mallet, J.; Delavoie, F.; Endres, F.; Troyon, M.; Molinari, M.

2009-11-01

The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

Germanium films by polymer-assisted deposition

DOEpatents

Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

2013-01-15

Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

PubMed

Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-07-11

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

Confined in-fiber solidification and structural control of silicon and silicon−germanium microparticles

PubMed Central

Gumennik, Alexander; Levy, Etgar C.; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F.; Joannopoulos, John D.; Fink, Yoel

2017-01-01

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon−germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon−germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices. PMID:28642348

Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared

NASA Astrophysics Data System (ADS)

Tosi, Alberto; Dalla Mora, Alberto; Zappa, Franco; Cova, Sergio

2007-09-01

Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.

Ultrafast All-Optical Switching of Germanium-Based Flexible Metaphotonic Devices.

PubMed

Lim, Wen Xiang; Manjappa, Manukumara; Srivastava, Yogesh Kumar; Cong, Longqing; Kumar, Abhishek; MacDonald, Kevin F; Singh, Ranjan

2018-03-01

Incorporating semiconductors as active media into metamaterials offers opportunities for a wide range of dynamically switchable/tunable, technologically relevant optical functionalities enabled by strong, resonant light-matter interactions within the semiconductor. Here, a germanium-thin-film-based flexible metaphotonic device for ultrafast optical switching of terahertz radiation is experimentally demonstrated. A resonant transmission modulation depth of 90% is achieved, with an ultrafast full recovery time of 17 ps. An observed sub-picosecond decay constant of 670 fs is attributed to the presence of trap-assisted recombination sites in the thermally evaporated germanium film. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bolometers for millimeter-wave Cosmology

NASA Astrophysics Data System (ADS)

Bock, James J.

2002-05-01

Bolometers offer high sensitivity for observations of the cosmic microwave background, Sunyaev-Zel'Dovich effect in clusters, and far-infrared galaxies. Near background-limited performance may be realized even under the low background conditions available from a space-borne platform. We discuss the achieved performance of silicon nitride micromesh (`spider web') bolometers readout by NTD Ge thermistors. We are developing arrays of such bolometers coupled to single-mode feedhorns. CMB polarization may be studies using a new absorber geometry allowing simultaneous detection of both linear polarizations in a single feedhorn with two individual detectors. Finally we discuss a new bolometer architecture consisting of an array of slot antennae coupled to filters and bolometers via superconducting microstrip. .

Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

NASA Astrophysics Data System (ADS)

Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

2017-12-01

Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

NASA Astrophysics Data System (ADS)

Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

2012-06-01

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

Temperature-dependent Refractive Index of Silicon and Germanium

NASA Technical Reports Server (NTRS)

Frey, Bradley J.; Leviton, Douglas B.; Madison, Timothy J.

2006-01-01

Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 pin, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than k5 x 10" is desired.

Experience from operating germanium detectors in GERDA

NASA Astrophysics Data System (ADS)

Palioselitis, Dimitrios; GERDA Collaboration

2015-05-01

Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

Multiple-step preparation and physicochemical characterization of crystalline α-germanium hydrogenphosphate

NASA Astrophysics Data System (ADS)

Romano, Ricardo; Ruiz, Ana I.; Alves, Oswaldo L.

2004-04-01

The reaction between germanium oxide and phosphoric acid has previously been described and led to impure germanium hydrogenphosphate samples with low crystallinity. A new multiple-step route involving the same reaction under refluxing and soft hydrothermal conditions is described for the preparation of pure and crystalline α-GeP. The physicochemical characterization of the samples allows accompaniment of the reaction evolution as well as determining short- and long-range structural organization. The phase purity of the α-GeP sample was confirmed by applying Rietveld's profile analysis, which also determined the cell parameters of its crystals.

High temperature material interactions of thermoelectric systems using silicon germanium.

NASA Technical Reports Server (NTRS)

Stapfer, G.; Truscello, V. C.

1973-01-01

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

PubMed

Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

2009-08-15

In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

PubMed

Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

2017-02-28

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

Fabricating Germanium Interfaces for Battery Applications

NASA Astrophysics Data System (ADS)

Serino, Andrew Clark

The experimental results presented herein detail the importance of material surfaces in device performance. We have demonstrated this importance by furthering and applying our understanding of germanium surfaces to a number of real-world applications. Pure and stable dispersions of germanane, an "all-surface" form of germanium, were created through solid-state synthesis followed by ultrasonication and centrifugation. These dispersions were used to fabricate germanane-based, high-performance, Li-ion anodes with capacities of ˜1100 mA-h/g, capacity retention over 100 cycles, and Coulombic efficiency of 99%. Additionally, carborane monolayers were self-assembled on Ge(100) and Ge(111) surfaces through carboxylic acid tethers, and found to be capable of tuning the surface work function by ˜0.4 eV without significantly affecting surface wettability. These capabilities are important for increasing device efficiency while minimizing complications associated with processing. Lastly, we introduce the concept of the molecular battery, a possible design using a layer-by-layer deposition approach, and our steps toward its realization. In this pursuit, we explored the assembly of metal-organic coordination of carborane-based linkers, as well as the capabilities of a film of benzene-based linkers (<50 nm) as a Li-ion battery separator using a Ge anode as a tool for analyzing performance.

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium

NASA Astrophysics Data System (ADS)

Sigillito, Anthony James

Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability. First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur. In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a

Silicon Germanium Cryogenic Low Noise Amplifiers

NASA Astrophysics Data System (ADS)

Bardin, J. C.; Montazeri, S.; Chang, Su-Wei

2017-05-01

Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today’s cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

High-speed recovery of germanium in a convection-aided mode using functional porous hollow-fiber membranes.

PubMed

Ozawa, I; Saito, K; Sugita, K; Sato, K; Akiba, M; Sugo, T

2000-08-04

A porous hollow-fiber membrane capable of recovery of germanium from a liquid stream was prepared by radiation-induced graft polymerization of an epoxy-group-containing vinyl monomer, glycidyl methacrylate, and subsequent functionalization with 2,2'-iminodiethanol, di-2-propanolamine, N-methylglucamine, and 3-amino-1,2-propanediol. The functional group density was as high as 1.4 mol per kg of the resultant hollow fiber. The polymer chains containing functional groups surrounding the pores enabled a high-speed recovery of germanium during permeation of a germanium oxide (GeO2) solution through the pores of the hollow fiber. Because of a negligible diffusional mass-transfer resistance, germanium concentration changes with the effluent volume, i.e., breakthrough curves, overlapped irrespective of the residence time of the solution, which ranged from 0.37 to 3.7 s across the hollow fiber. After repeated use of adsorption and elution, the adsorption capacity did not deteriorate.

Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

NASA Astrophysics Data System (ADS)

Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

2018-03-01

In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

Germanium multiphase equation of state

DOE PAGES

Crockett, Scott D.; Lorenzi-Venneri, Giulia De; Kress, Joel D.; ...

2014-05-07

A new SESAME multiphase germanium equation of state (EOS) has been developed using the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

NASA Technical Reports Server (NTRS)

Szofran, F. R.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Motakef, S.; Vujisic, L. J.; Croell, A.; Dold, P.; Rose, M. Franklin (Technical Monitor)

2001-01-01

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have

Purification of Germanium Crystals by Zone Refining

NASA Astrophysics Data System (ADS)

Kooi, Kyler; Yang, Gang; Mei, Dongming

2016-09-01

Germanium zone refining is one of the most important techniques used to produce high purity germanium (HPGe) single crystals for the fabrication of nuclear radiation detectors. During zone refining the impurities are isolated to different parts of the ingot. In practice, the effective isolation of an impurity is dependent on many parameters, including molten zone travel speed, the ratio of ingot length to molten zone width, and number of passes. By studying the theory of these influential factors, perfecting our cleaning and preparation procedures, and analyzing the origin and distribution of our impurities (aluminum, boron, gallium, and phosphorous) identified using photothermal ionization spectroscopy (PTIS), we have optimized these parameters to produce HPGe. We have achieved a net impurity level of 1010 /cm3 for our zone-refined ingots, measured with van der Pauw and Hall-effect methods. Zone-refined ingots of this purity can be processed into a detector grade HPGe single crystal, which can be used to fabricate detectors for dark matter and neutrinoless double beta decay detection. This project was financially supported by DOE Grant (DE-FG02-10ER46709) and the State Governor's Research Center.

Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moffatt, Robert

2016-03-01

In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Ourmore » measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.« less

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Mori, S.; Morioka, N.

2014-12-21

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependencemore » was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications.« less

Analysis of high-purity germanium dioxide by ETV-ICP-AES with preliminary concentration of trace elements.

PubMed

Medvedev, Nickolay S; Shaverina, Anastasiya V; Tsygankova, Alphiya R; Saprykin, Anatoly I

2016-08-01

The paper presents a combined technique of germanium dioxide analysis by inductively coupled plasma atomic emission spectrometry (ICP-AES) with preconcentration of trace elements by distilling off matrix and electrothermal (ETV) introduction of the trace elements concentrate into the ICP. Evaluation of metrological characteristics of the developed technique of high-purity germanium dioxide analysis was performed. The limits of detection (LODs) for 25 trace elements ranged from 0.05 to 20ng/g. The accuracy of proposed technique is confirmed by "added-found" («or spiking») experiment and comparing the results of ETV-ICP-AES and ICP-AES analysis of high purity germanium dioxide samples. Copyright © 2016 Elsevier B.V. All rights reserved.

SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation

NASA Astrophysics Data System (ADS)

Anthony, R.; Haddara, Y. M.; Crowe, I. F.; Knights, A. P.

2017-08-01

Germanium condensation is demonstrated using a two-step wet oxidation of germanium implanted Silicon-On-Insulator (SOI). Samples of 220 nm thick SOI are implanted with a nominal fluence of 5 × 1016 cm-2 Ge+ at an energy of 33 keV. Primary post-implantation wet oxidation is performed initially at 870 °C for 70 min, with the aim of capping the sample without causing significant dose loss via Ge evaporation through the sample surface. This is followed by a secondary higher temperature wet oxidation at either 900 °C, 1000 °C, or 1080 °C. The germanium retained dose and concentration profile, and the oxide thickness is examined after primary oxidation, and various secondary oxidation times, using Rutherford backscattering analysis. A mixed SiGe oxide is observed to form during the primary oxidation followed by a pure silicon oxide after higher temperature secondary oxidation. The peak germanium concentration, which varies with secondary oxidation condition, is found to range from 43 at. % to 95 at. %, while the FWHM of the Ge profile varies from 13 to 5 nm, respectively. It is also observed that both the diffusion of germanium and the rate of oxidation are enhanced at 870 and 900 °C compared to equilibrium expectations. Transmission electron microscopy of a representative sample with secondary oxidation at 1080 °C for 20 min shows that the SiGe layer is crystalline in nature and seeded from the underlying silicon. Raman spectroscopy is used to determine residual strain in the SiGe region following secondary oxidation. The strain is compressive in nature and increases with Ge concentration to a maximum of approximately 1% in the samples probed. In order to elucidate the physical mechanisms, which govern the implantation-condensation process, we fit the experimental profiles of the samples with a model that uses a modified segregation boundary condition; a modified linear rate constant for the oxidation; and an enhanced diffusion coefficient of germanium where the

Germanium and uranium in coalified wood bom upper Devonian black shale

USGS Publications Warehouse

Breger, I.A.; Schopf, J.M.

1955-01-01

Microscopic study of black, vitreous, carbonaceous material occurring in the Chattanooga shale in Tennessee and in the Cleveland member of the Ohio shale in Ohio has revealed coalified woody plant tissue. Some samples have shown sufficient detail to be identified with the genus Cauixylon. Similar material has been reported in the literature as "bituminous" or "asphaltic" stringers. Spectrographic analyses of the ash from the coalified wood have shown unusually high percentages of germanium, uranium, vanadium, and nickel. The inverse relationship between uranium and germanium in the ash and the ash content of various samples shows an association of these elements with the organic constituents of the coal. On the basis of geochemical considerations, it seems most probable that the wood or coalified wood was germanium-bearing at the time logs or woody fragmenta were floated into the basins of deposition of the Chattanooga shale and the Cleveland member of the Ohio shale. Once within the marine environment, the material probably absorbed uranium with the formation of organo-uranium compounds such as exist in coals. It is suggested that a more systematic search for germaniferous coals in the vicinity of the Chattanooga shale and the Cleveland member of the Ohio shale might be rewarding. ?? 1955.

Germanium and uranium in coalified wood from Upper Devonian black shale

USGS Publications Warehouse

Breger, Irving A.; Schopf, James M.

1954-01-01

Microscopic study of black, vitreous, carbonaceous material occurring in the Chattanooga shale in Tennessee and in the Cleveland member of the Ohio shale in Ohio has revealed coalified woody plant tissue. Some samples have shown sufficient detail to be identified with the genus Callixylon. Similar material has been reported in the literature as "bituminous" or "asphaltic" stringers. Spectrographic analyses of the ash from the coalified wood have shown unusually high percentages of germanium, uranium, vanadium, and nickel. The inverse relationship between uranium and germanium in the ash and the ash content of various samples shows an association of these elements with the organic constituents of the coal. On the basis of geochemical considerations, it seems most probable that the wood or coalified wood was germanium-bearing at the time logs or woody fragments were floated into the basins of deposition of the Chattanooga shale and the Cleveland member of the Ohio shale. Once within the marine environment, the material probably absorbed uranium with the formation of organo-uranium compounds such as have been found to exist in coals. It is suggested that a more systematic search for germaniferous coals in the vicinity of the Chattanooga shale and the Cleveland member of the Ohio shale might be rewarding.

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

NASA Astrophysics Data System (ADS)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Far-Infrared Magneto-Optical Studies in Germanium and Indium-Antimonide at High Intensities

NASA Astrophysics Data System (ADS)

Leung, Michael

Observations of nonlinear magneto-optical phenomena occurring in p-type Germanium and n-type Indium Antimonide are reported. These include multi-photon ionization of impurity states, and a new observation, the magneto-photon ionization of impurity states, and a new observation, the magneto-photon drag effect. A novel source of far-infrared radiation has been used. This source uses a pulsed CO(,2) LASER to optically pump a super-radiant cell, generating light with intensities up to 100 KW/cm('2) and wavelengths from 66 (mu)m to 496 (mu)m in a pulse of 150 nanoseconds duration. The Germanium samples were doped with Gallium, which is a shallow acceptor with an ionization potential of 11 meV. At liquid Helium temperature virtually all charge carriers are bound to acceptor sites. However, the high intensity radiation unexpectedly ionizes the acceptors. This is demonstrated through measurements of photoconductivity, transmission and the photo-Hall Effect. This observation is unexpected because the photon energy is one-fourth the ionization potential. Rate equations describing sequential multiphoton excitations are in agreement with the experimental results. The intermediate states are postulated to be acceptor exciton band states. Studies of the photoexcited mobility at 496 (mu)m suggest that at non-saturating levels of photoexcitation, the primary scattering mechanism of hot holes in Germanium is by neutral impurities. A new magneto-optical effect, the magneto-photon drag effect, has been studied in both Germanium and Indium Antimonide. This is simply the absorption of momentum by free carriers, from an incident photon field. It has been found that the mechanism for this effect is different in the two materials. In Germanium, the effect occurs when carriers make optical transitions from the heavy hole band to the light hole band. Thus, the magneto-optical behavior depends heavily upon the band structure. On the other hand, a modified Drude model (independent electron

Non-local electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

Determination of germanium by AAS in chloride-containing matrices.

PubMed

Anwari, M A; Abbasi, H U; Volkan, M; Ataman, O Y

1996-06-01

Interference effects of NaCl on the ET-AAS determination of Ge have been studied. The use of several matrix modifiers to alleviate this problem such as Ni and Zn perchlorates and nitrates, nitric acid, ammonium nitrate are reported. The stabilizing effect of Zn and Ni perchlorates allows the use of high pretreatment temperatures. NaCl is thus thermally volatilized from the atomizer by employing pretreatment temperatures higher than 1500 degrees C resulting in an improved sensitivity. Germanium levels in zinc plant slag samples, have been determined and compared to those obtained for the same samples spiked with NaCl with platform and wall atomization using nickel perchlorate as a matrix modifier. The results were compared with those from a hydride generation system equipped with a liquid nitrogen trap. The recoveries for germanium have been almost complete and amount to 99% for the original slag samples and 80% for 15% (w/w) NaCl containing spiked samples.

Regimes of laser-induced periodic surface structure on germanium: radiation remnants and surface plasmons.

PubMed

Young, J F; Sipe, J E; van Driel, H M

1983-08-01

We present experimental evidence showing that the period of the rippled surface structure induced on germanium by 1.06-microm laser pulses undergoes a discontinuous shift above a certain threshold intensity. The measured shift, as a angle of incidence of the damaging beam, is quantitatively interpreted as a transition between a regime of inhomogeneous melting controlled by radiation-remnant field structures and a regime of ripple formation surface plasmons in an optically thick layer of liquid, metallic germanium formed at the surface.

Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

DOEpatents

Haller, Eugene E.; Brundermann, Erik

2000-01-01

A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

DOE PAGES

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.; ...

2017-08-28

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. Here, we propose that germanium undergoes amorphization above a thresholdmore » stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.« less

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

PubMed Central

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.; Remington, Bruce A.; Hahn, Eric N.; More, Karren L.; Meyers, Marc A.

2017-01-01

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. We propose that germanium undergoes amorphization above a threshold stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition. PMID:28847926

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization.

PubMed

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E; Remington, Bruce A; Hahn, Eric N; More, Karren L; Meyers, Marc A

2017-09-12

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. We propose that germanium undergoes amorphization above a threshold stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.

Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.

Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. Here, we propose that germanium undergoes amorphization above a thresholdmore » stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.« less

Position resolution simulations for the inverted-coaxial germanium detector, SIGMA

NASA Astrophysics Data System (ADS)

Wright, J. P.; Harkness-Brennan, L. J.; Boston, A. J.; Judson, D. S.; Labiche, M.; Nolan, P. J.; Page, R. D.; Pearce, F.; Radford, D. C.; Simpson, J.; Unsworth, C.

2018-06-01

The SIGMA Germanium detector has the potential to revolutionise γ-ray spectroscopy, providing superior energy and position resolving capabilities compared with current large volume state-of-the-art Germanium detectors. The theoretical position resolution of the detector as a function of γ-ray interaction position has been studied using simulated detector signals. A study of the effects of RMS noise at various energies has been presented with the position resolution ranging from 0.33 mm FWHM at Eγ = 1 MeV, to 0.41 mm at Eγ = 150 keV. An additional investigation into the effects pulse alignment have on pulse shape analysis and in turn, position resolution has been performed. The theoretical performance of SIGMA operating in an experimental setting is presented for use as a standalone detector and as part of an ancillary system.

The MAJORANA DEMONSTRATOR: A search for neutrinoless double-beta decay of germanium-76

NASA Astrophysics Data System (ADS)

Schubert, Alexis; Majorana Collaboration

2011-04-01

Observation of neutrinoless double-beta decay (0 νββ) could determine whether the neutrino is a Majorana particle and may provide information on neutrino mass. The MAJORANA Collaboration will search for 0 νββ of 76Ge in an array of germanium detectors enriched to 86% in 76Ge. Germanium detectors are a well-understood technology and have the benefits of excellent energy resolution, a high Q-value, and the ability to act as source and detector. The p-type point contact germanium detectors chosen by the MAJORANA Collaboration provide low noise, low energy threshold, and some ability to distinguish between the signal and background events. MAJORANA is constructing the DEMONSTRATOR, which will be used to conduct research and development toward a tonne-scale Ge experiment. The DEMONSTRATOR will be installed deep underground and will contain 40 kg of Ge deployed in an ultra-low-background shielded environment. Research supported by DOE under contracts DE-AC05-00OR22725 and DE-FG02-97ER41020.

Using a thermistor flowmeter with attached video camera for monitoring sponge excurrent speed and oscular behaviour

PubMed Central

Jorgensen, Damien; Webster, Nicole S.; Pineda, Mari-Carmen; Duckworth, Alan

2016-01-01

A digital, four-channel thermistor flowmeter integrated with time-lapse cameras was developed as an experimental tool for measuring pumping rates in marine sponges, particularly those with small excurrent openings (oscula). Combining flowmeters with time-lapse imagery yielded valuable insights into the contractile behaviour of oscula in Cliona orientalis. Osculum cross-sectional area (OSA) was positively correlated to measured excurrent speeds (ES), indicating that sponge pumping and osculum contraction are coordinated behaviours. Both OSA and ES were positively correlated to pumping rate (Q). Diel trends in pumping activity and osculum contraction were also observed, with sponges increasing their pumping activity to peak at midday and decreasing pumping and contracting oscula at night. Short-term elevation of the suspended sediment concentration (SSC) within the seawater initially decreased pumping rates by up to 90%, ultimately resulting in closure of the oscula and cessation of pumping. PMID:27994973

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; Cushing, Scott K.; Borja, Lauren J.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M4,5-edge (∼30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔEgap,Ge,direct=0.8 eV) and Si0.25Ge0.75 indirect gaps (ΔEgap,Si0.25Ge0.75,indirect=0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si0.25Ge0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution. PMID:28653020

Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podkopaev, O. I.; Shimanskiy, A. F., E-mail: shimanaf@mail.ru; Kopytkova, S. A.

2016-10-15

The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

A Low-Noise Germanium Ionization Spectrometer for Low-Background Science

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aalseth, Craig E.; Colaresi, Jim; Collar, Juan I.

2016-12-01

Recent progress on the development of very low energy threshold high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a low mass, WIMP dark matter direct detection search. The integrated detector and low background cryostat achieved noise performance of 98 eV full-width half-maximum of an input electronic pulse generator peak and gamma-ray energy resolution of 1.9 keV full-width half-maximum at the 60Co gamma-ray energy of 1332 keV. This Transaction reports the thermal characterization of the low-background cryostat, specifications of themore » newly prepared 1.2 kg p-type point contact germanium detector, and the ionization spectroscopy – energy resolution and energy threshold – performance of the integrated system.« less

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

NASA Astrophysics Data System (ADS)

Monmeyran, Corentin; Crowe, Iain F.; Gwilliam, Russell M.; Heidelberger, Christopher; Napolitani, Enrico; Pastor, David; Gandhi, Hemi H.; Mazur, Eric; Michel, Jürgen; Agarwal, Anuradha M.; Kimerling, Lionel C.

2018-04-01

Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors.

Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

PubMed

Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

2016-07-01

A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic. Copyright © 2015 Elsevier B.V. All rights reserved.

Characterization of a high-purity germanium detector for small-animal SPECT

PubMed Central

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-01-01

We present an initial evaluation of a mechanically-cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axis. Finally, a flood-corrected-flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT. PMID:21852723

Characterization of a high-purity germanium detector for small-animal SPECT.

PubMed

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-09-21

We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Formation of Porous Germanium Layers by Silver-Ion Implantation

NASA Astrophysics Data System (ADS)

Stepanov, A. L.; Vorob'ev, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Yu. N.

2018-04-01

We propose a method for the formation of porous germanium ( P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag+ ions into single-crystalline germanium ( c-Ge). This is demonstrated by implantation of 30-keV Ag+ ions into a polished c-Ge plate to a dose of 1.5 × 1017 ion/cm2 at an ion beam-current density of 5 μA/cm2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ˜10-20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag+ ion implantation is accompanied by effective sputtering of the Ge surface.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE PAGES

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; ...

2017-06-06

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

PubMed Central

Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

2016-01-01

We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen− (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen− clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen−/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

PubMed

Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

2015-05-06

Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching

PubMed Central

Chaabane, Ibtihel; Banerjee, Debika; Touayar, Oualid; Cloutier, Sylvain G.

2017-01-01

Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface. PMID:28773215

A Modified Monte Carlo Method for Carrier Transport in Germanium, Free of Isotropic Rates

NASA Astrophysics Data System (ADS)

Sundqvist, Kyle

2010-03-01

We present a new method for carrier transport simulation, relevant for high-purity germanium < 100 > at a temperature of 40 mK. In this system, the scattering of electrons and holes is dominated by spontaneous phonon emission. Free carriers are always out of equilibrium with the lattice. We must also properly account for directional effects due to band structure, but there are many cautions in the literature about treating germanium in particular. These objections arise because the germanium electron system is anisotropic to an extreme degree, while standard Monte Carlo algorithms maintain a reliance on isotropic, integrated rates. We re-examine Fermi's Golden Rule to produce a Monte Carlo method free of isotropic rates. Traditional Monte Carlo codes implement particle scattering based on an isotropically averaged rate, followed by a separate selection of the particle's final state via a momentum-dependent probability. In our method, the kernel of Fermi's Golden Rule produces analytical, bivariate rates which allow for the simultaneous choice of scatter and final state selection. Energy and momentum are automatically conserved. We compare our results to experimental data.

Cryogenic readout techniques for germanium detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benato, G.; Cattadori, C.; Di Vacri, A.

High Purity Germanium detectors are used in many applications, from nuclear and astro-particle physics, to homeland security or environment protection. Although quite standard configurations are often used, with cryostats, charge sensitive amplifiers and analog or digital acquisition systems all commercially available, it might be the case that a few specific applications, e.g. satellites, portable devices, cryogenic physics experiments, etc. also require the development of a few additional or complementary techniques. An interesting case is for sure GERDA, the Germanium Detector Array experiment, searching for neutrino-less double beta decay of {sup 76}Ge at the Gran Sasso National Laboratory of INFN -more » Italy. In GERDA the entire detector array, composed of semi-coaxial and BEGe naked crystals, is operated suspended inside a cryostat filled with liquid argon, that acts not only as cooling medium and but also as an active shield, thanks to its scintillation properties. These peculiar circumstances, together with the additional requirement of a very low radioactive background from all the materials adjacent to the detectors, clearly introduce significant constraints on the design of the Ge front-end readout electronics. All the Ge readout solutions developed within the framework of the GERDA collaboration, for both Phase I and Phase II, will be briefly reviewed, with their relative strength and weakness compared together and with respect to ideal Ge readout. Finally, the digital processing techniques developed by the GERDA collaboration for energy estimation of Ge detector signals will be recalled. (authors)« less

Thermodynamics of Alloys: Studies of Nickel-Gallium, Nickel-Germanium and Nickel-Rhodium Alloys.

DTIC Science & Technology

NICKEL ALLOYS, *GALLIUM ALLOYS, *GERMANIUM ALLOYS, * RHODIUM ALLOYS, *PHASE STUDIES, THERMODYNAMICS, INTERMETALLIC COMPOUNDS, FREE ENERGY, ENTROPY, HEAT OF FORMATION, CRYSTAL STRUCTURE, UNITED KINGDOM.

Thin film metal thermistors with microsecond time response for shock temperature measurements of polymers

NASA Astrophysics Data System (ADS)

Taylor, Nicholas; Williamson, David; Jardine, Andrew

2013-06-01

Equations of state can be used to predict the relationship between pressure, volume and temperature. However, in shock physics, they are usually only constrained by experimental observations of pressure and volume. Direct observation of temperature in a shock is therefore valuable in constraining equations of state. Bloomquist and Sheffield (1980, 1981) and Rosenberg and Partom (1984) have attempted such observations in PMMA. However, their results disagree strongly above 2 GPa shock pressure. Here we present an improved fabrication technique, to examine this outstanding issue. We make use of the fact that the electrical resistivity of most metals is a known function of both pressure and temperature. If the change in resistance of a thin metal thermistor gauge is measured during a shock experiment of known pressure, the temperature can be calculated directly. The time response is limited by the time taken for the gauge to reach thermal equilibrium with the medium in which it is embedded. Gold gauges of thickness up to 200 nm have been produced by evaporation, and fully embedded in PMMA. These reach thermal equilibrium with the host material in under 1 μs, allowing temperature measurement within the duration of a plate impact experiment.

Research and Development Supporting a Next Generation Germanium Double Beta Decay Experiment

NASA Astrophysics Data System (ADS)

Rielage, Keith; Elliott, Steve; Chu, Pinghan; Goett, Johnny; Massarczyk, Ralph; Xu, Wenqin

2015-10-01

To improve the search for neutrinoless double beta decay, the next-generation experiments will increase in source mass and continue to reduce backgrounds in the region of interest. A promising technology for the next generation experiment is large arrays of Germanium p-type point contact detectors enriched in 76-Ge. The experience, expertise and lessons learned from the MAJORANA DEMONSTRATOR and GERDA experiments naturally lead to a number of research and development activities that will be useful in guiding a future experiment utilizing Germanium. We will discuss some R&D activities including a hybrid cryostat design, background reduction in cabling, connectors and electronics, and modifications to reduce assembly time. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Melting point of high-purity germanium stable isotopes

NASA Astrophysics Data System (ADS)

Gavva, V. A.; Bulanov, A. D.; Kut'in, A. M.; Plekhovich, A. D.; Churbanov, M. F.

2018-05-01

The melting point (Tm) of germanium stable isotopes 72Ge, 73Ge, 74Ge, 76Ge was determined by differential scanning calorimetry. With the increase in atomic mass of isotope the decrease in Tm is observed. The decrease was equal to 0.15 °C per the unit of atomic mass which qualitatively agrees with the value calculated by Lindemann formula accounting for the effect of "isotopic compression" of elementary cell.

Electrical Characteristics CuFe2O4 Thick Film Ceramics Made with Different Screen Size Utiizing Fe2O3 Nanopowder Derived from Yarosite for NTC Thermistor

NASA Astrophysics Data System (ADS)

Wiendartun, Syarif, Dani Gustaman

2010-10-01

Fabrication of CuFe2O4 thick film ceramics utilizing Fe2O3 derived from yarosite using screen printing technique for NTC thermistor has been carried out. Effect of thickness variation due to different size of screen (screen 225; 300 and 375 mesh) has been studied. X-ray diffraction analyses (XRD) was done to know crystal structure and phases formation. SEM analyses was carried out to know microstructure of the films. Electrical properties characterization was done through measurement of electrical resistance at various temperatures (room temperature to 100° C). The XRD data showed that the films crystalize in tetragonal spinel. The SEM images showed that the screen with the smaller of the hole size, made the grain size was bigger. Electrical data showed that the larger the screen different size thickness variation (mesh), the larger the resistance, thermistor constant and sensitivity. From the electrical characteristics data, it was known that the electrical characteristics of the CuFe2O4 thick film ceramics followed the NTC characteristic. The value of B and RRT of the produced CuFe2O4 ceramics namely B = 3241-3484 K and RRT = 25.6-87.0 M Ohm, fitted market requirement.

Active noise canceling system for mechanically cooled germanium radiation detectors

DOEpatents

Nelson, Karl Einar; Burks, Morgan T

2014-04-22

A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

Effect of the microstructure on electrical properties of high-purity germanium

NASA Astrophysics Data System (ADS)

Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

2013-05-01

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

Characteristics of signals originating near the lithium-diffused N+ contact of high purity germanium p-type point contact detectors

DOE PAGES

Aguayo, E.; Amman, M.; Avignone, F. T.; ...

2012-11-09

A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Furthermore, experiments that operate germanium detectors with a verymore » low energy threshold may benefit from the methods presented herein.« less

A crystalline germanium flexible thin-film transistor

NASA Astrophysics Data System (ADS)

Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2017-11-01

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Removal of the long-lived {sup 222}Rn daughters from steel and germanium surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojcik, Marcin; Zuzel, Grzegorz; Majorovits, Bela

Removal of the long-lived {sup 222}Rn daughters ({sup 210}Pb, {sup 210}Bi and {sup 210}Po) from stainless steel and germanium surfaces was investigated. As cleaning technique etching was applied to samples in a form of discs exposed earlier to a strong radon source. Reduction of the {sup 210}Pb activity was tested using a HPGe spectrometer, for {sup 210}Bi a beta spectrometer and for {sup 210}Po an alpha spectrometer was used. According to the conducted measurements all the isotopes were removed very efficiently from germanium. Results obtained for stainless steel were worse but still better than those achieved for copper.

Th and U fuel photofission study by NTD for AD-MSR subcritical assembly

NASA Astrophysics Data System (ADS)

Sajo-Bohus, Laszlo; Greaves, Eduardo D.; Davila, Jesus; Barros, Haydn; Pino, Felix; Barrera, Maria T.; Farina, Fulvio

2015-07-01

During the last decade a considerable effort has been devoted for developing energy generating systems based on advanced nuclear technology within the design concepts of GEN-IV. Thorium base fuel systems such as accelerator driven nuclear reactors are one of the often mentioned attractive and affordable options. Several radiotherapy linear accelerators are on the market and due to their reliability, they could be employed as drivers for subcritical liquid fuel assemblies. Bremsstrahlung photons with energies above 5.5MeV, induce (γ,n) and (e,e'n) reactions in the W-target. Resulting gamma radiation and photo or fission neutrons may be absorbed in target materials such as thorium and uranium isotopes to induce sustained fission or nuclear transmutation in waste radioactive materials. Relevant photo driven and photo-fission reaction cross sections are important for actinides 232Th, 238U and 237Np in the radiotherapy machines energy range of 10-20 MV. In this study we employ passive nuclear track detectors (NTD) to determine fission rates and neutron production rates with the aim to establish the feasibility for gamma and photo-neutron driven subcritical assemblies. To cope with these objectives a 20 MV radiotherapy machine has been employed with a mixed fuel target. Results will support further development for a subcritical assembly employing a thorium containing liquid fuel. It is expected that acquired technological knowledge will contribute to the Venezuelan nuclear energy program.

Intrinsic germanium detector used in borehole sonde for uranium exploration

USGS Publications Warehouse

Senftle, F.E.; Moxham, R.M.; Tanner, A.B.; Boynton, G.R.; Philbin, P.W.; Baicker, J.A.

1976-01-01

A borehole sonde (~1.7 m long; 7.3 cm diameter) using a 200 mm2 planar intrinsic germanium detector, mounted in a cryostat cooled by removable canisters of frozen propane, has been constructed and tested. The sonde is especially useful in measuring X- and low-energy gamma-ray spectra (40–400 keV). Laboratory tests in an artificial borehole facility indicate its potential for in-situ uranium analyses in boreholes irrespective of the state of equilibrium in the uranium series. Both natural gamma-ray and neutron-activation gamma-ray spectra have been measured with the sonde. Although the neutron-activation technique yields greater sensitivity, improvements being made in the resolution and efficiency of intrinsic germanium detectors suggest that it will soon be possible to use a similar sonde in the passive mode for measurement of uranium in a borehole down to about 0.1% with acceptable accuracy. Using a similar detector and neutron activation, the sonde can be used to measure uranium down to 0.01%.

Passivation of micro-strip gas chambers with an interstitial germanium coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyamoto, J.; Knoll, G.F.; Amos, N.

1996-12-31

Micro-strip gas chambers (MSGCs) were constructed in the Solid-State Electronics Laboratory of the University of Michigan and their performance was studied. Many efforts have been made in the past to construct MSGCs that yield high absolute gas gain and stable gas gain. Introducing a thin germanium layer has been effective for passivation but difficulties associated with the poor adhesiveness of the thin layer have been a serious obstacle. This paper reports on a new method used to overcome these difficulties. Unlike the conventional coating method the thin germanium layer was successfully deposited between the strip lines. This technique requires amore » careful geometric alignment of a second photomask with the original micro-strip structure. The resulting detector performance was noteworthy and an absolute gas gain of 2 {center_dot} 10{sup 4} was easily achieved by the new chamber. The chamber`s gain instability was also reduced significantly compared with those without interstitial coating.« less

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Solution synthesis of germanium nanocrystals

DOEpatents

Gerung, Henry [Albuquerque, NM; Boyle, Timothy J [Kensington, MD; Bunge, Scott D [Cuyahoga Falls, OH

2009-09-22

A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

Bolometric Array Detectors for Space-Borne Astronomy

NASA Technical Reports Server (NTRS)

Lange, Andrew E.

2000-01-01

Funding from the NASA Innovative Research Grant was used to develop bolometric detectors. As described in the proposal, silicon nitride micromesh ('spider-web') absorbers had been demonstrated at U.C. Berkeley but not developed to be flight-worthy devices. We proceeded to first fabricate bolometers with Neutron Transmutation Doped (NTD) Ge thermistors that demonstrated high optical coupling (Church et al. 1996) and were developed for a ground-based millimeter-wave receiver (Mauskopf et al. 1997). The next generation of devices used In bump-bonded thermistors to achieve devices with performance product NEP*sqrt(tau) = 3e - 18 j at 300 mK, demonstrating a full order of magnitude improvement over pervious devices. These devices achieved an NEP = 1e-18 W/rtHz (Murray et al. 1996) as promised in the proposal. Sensitivities as good as 1e - 19 W/rtHz appear achievable with the silicon nitride architecture (Bock et al. 1997). Finally, arrays of micromesh bolometers were shown to be feasible in the last year of the program by etching a large number of devices on a single silicon wafer (75 mm). Full arrays were subsequently demonstrated for selection on the ESA/NASA Far-Infrared Space Telescope (FIRST) in competition with detectors provided by CEA in France and GSFC in the US Micromesh bolometer arrays are now baselined for both the ESA/NASA Planck and FIRST missions.

Gallium-doped germanium, evaluation of photoconductors, part 1

NASA Technical Reports Server (NTRS)

Moore, W. J.

1979-01-01

Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

NASA Technical Reports Server (NTRS)

Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

1997-01-01

A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

NASA Astrophysics Data System (ADS)

Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

2016-08-01

Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6): the largest metalloid cluster compound of germanium: on the way to fullerene-like compounds?

PubMed

Schenk, Christian; Schnepf, Andreas

2008-10-14

The reaction of GeBr with LiGe(SiMe(3))(3) yields the largest metalloid cluster compound of germanium Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6), in which 14 germanium atoms are arranged as a hollow sphere in the cluster core, showing that in the case of germanium also fullerene-like compounds might be present in the borderland between the molecular and solid states.

The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

NASA Astrophysics Data System (ADS)

Karlsteen, M.; Willander, M.

1993-11-01

In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

PubMed

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

Multiline phase conjugation at 4 microm in germanium.

PubMed

Depatie, D; Haueisen, D

1980-06-01

Phase conjugation by degenerate four-wave mixing in the 4-microm region in germanium has been observed for both single-line and multiline radiation. By using single-line output of a DF laser at 3.8 microm, X3 has been measured to be 4 X 10(-1) esu. Phase conjugation of multiline laser output has been achieved with an efficiency of 0.03%, a level that is consistent with the susceptibility found for single-line phase conjugation and the assumption of independent conjugation of each line of the multiline output.

Current experiments in germanium 0 ν β β search -- GERDA and MAJORANA

NASA Astrophysics Data System (ADS)

von Sturm, K.

2015-01-01

There are unanswered questions regarding neutrino physics that are of great interest for the scientific community. For example the absolute masses, the mass hierarchy and the nature of neutrinos are unknown up to now. The discovery of neutrinoless double beta decay (0νββ) would prove the existence of a Majorana mass, which would be linked to the half-life of the decay, and would in addition provide an elegant solution for the small mass of the neutrinos via the seesaw mechanism. Because of an existing discovery claim of 0νββ of 76Ge and the excellent energy resolution achievable, germanium is of special interest in the search for 0νββ . In this article the state of the art of germanium 0νββ search, namely the GERDA experiment and MAJORANA demonstrator, is presented. In particular, recent results of the GERDA collaboration, which strongly disfavour the above mentioned claim, are discussed.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium.

PubMed

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J; Kraus, Peter M; Cushing, Scott K; Gandman, Andrey; Kaplan, Christopher J; Oh, Myoung Hwan; Prell, James S; Prendergast, David; Pemmaraju, Chaitanya D; Neumark, Daniel M; Leone, Stephen R

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20  cm -3 . Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J.; Kraus, Peter M.; Cushing, Scott K.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions. PMID:28569752

Multi-element germanium detectors for synchrotron applications

NASA Astrophysics Data System (ADS)

Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.; Vernon, E.; Pinelli, D.; Dooryhee, E.; Ghose, S.; Caswell, T.; Siddons, D. P.; Miceli, A.; Baldwin, J.; Almer, J.; Okasinski, J.; Quaranta, O.; Woods, R.; Krings, T.; Stock, S.

2018-04-01

We have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. We will discuss the technical details of the systems, and present some of the results from them.

Soft lithographic functionalization and patterning oxide-free silicon and germanium.

PubMed

Bowers, Carleen M; Toone, Eric J; Clark, Robert L; Shestopalov, Alexander A

2011-12-16

The development of hybrid electronic devices relies in large part on the integration of (bio)organic materials and inorganic semiconductors through a stable interface that permits efficient electron transport and protects underlying substrates from oxidative degradation. Group IV semiconductors can be effectively protected with highly-ordered self-assembled monolayers (SAMs) composed of simple alkyl chains that act as impervious barriers to both organic and aqueous solutions. Simple alkyl SAMs, however, are inert and not amenable to traditional patterning techniques. The motivation for immobilizing organic molecular systems on semiconductors is to impart new functionality to the surface that can provide optical, electronic, and mechanical function, as well as chemical and biological activity. Microcontact printing (μCP) is a soft-lithographic technique for patterning SAMs on myriad surfaces. Despite its simplicity and versatility, the approach has been largely limited to noble metal surfaces and has not been well developed for pattern transfer to technologically important substrates such as oxide-free silicon and germanium. Furthermore, because this technique relies on the ink diffusion to transfer pattern from the elastomer to substrate, the resolution of such traditional printing is essentially limited to near 1 μm. In contrast to traditional printing, inkless μCP patterning relies on a specific reaction between a surface-immobilized substrate and a stamp-bound catalyst. Because the technique does not rely on diffusive SAM formation, it significantly expands the diversity of patternable surfaces. In addition, the inkless technique obviates the feature size limitations imposed by molecular diffusion, facilitating replication of very small (<200 nm) features. However, up till now, inkless μCP has been mainly used for patterning relatively disordered molecular systems, which do not protect underlying surfaces from degradation. Here, we report a simple, reliable

Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

NASA Astrophysics Data System (ADS)

Tengku Kamarul Bahri, T. N. H.; Wagiran, H.; Hussin, R.; Saeed, M. A.; Hossain, I.; Ali, H.

2014-10-01

Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5-4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

Temperature-Dependent Compensation and Optical Quenching by Thermal Oxygen Donors in Germanium

NASA Technical Reports Server (NTRS)

Watson, D.; Guptill, M.; Huffman, J.; Krabach, T.; Raines, S.

1994-01-01

Photothermal ionization spectroscopy of germanium, doped in the impurity-band conduction range with gallium acceptors and with thermal oxygen donors, reveals that the donors and acceptors compensate each other at temperatures higher than about 5K, but that the impurities coexist as neutral donors and acceptors at lower temperatures.

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

PubMed

Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2013-11-06

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

Deformation potentials for band-to-band tunneling in silicon and germanium from first principles

NASA Astrophysics Data System (ADS)

Vandenberghe, William G.; Fischetti, Massimo V.

2015-01-01

The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: DTA = 4.1 × 108 eV/cm, DTO = 1.2 × 109 eV/cm, and DLO = 2.2 × 109 eV/cm for BTBT in silicon and DTA = 7.8 × 108 eV/cm and DLO = 1.3 × 109 eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications.

Study of radioactive impurities in neutron transmutation doped germanium

NASA Astrophysics Data System (ADS)

Mathimalar, S.; Dokania, N.; Singh, V.; Nanal, V.; Pillay, R. G.; Shrivastava, A.; Jagadeesan, K. C.; Thakare, S. V.

2015-02-01

A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at Bhabha Atomic Research Centre (BARC), Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of 65Zn, 110mAg and 182Ta impurities, which can be reduced by chemical etching of approximately 50 μm thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of 123Sb in bulk Ge is estimated to be 1 Bq / g after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cooldown period of 2 years would be necessary to reduce the radioactive background to ≤ 1 mBq / g.

[Effects of germanium on cell growth, polysaccharide production and cellular redox status in suspension cultures of protocorm-like bodies of Dendrobium huoshanense].

PubMed

Wei, Ming; Yang, Chaoying; Jiang, Shaotong

2010-03-01

To solve the problem of low growth rate and metabolism level in suspension cultures of protocorm-like bodies (PLBs) of Dendrobium huoshanense. The effects of germanium on PLB proliferation and accumulation of polysaccharides together with nutrient utilization were investigated and the contents of reducing sugars, soluble proteins, the activities of antioxidant enzymes and redox status of the cells of PLB were analyzed. The results indicated that the optimum concentration of germanium dioxide (4.0 mg/L) significantly enhanced the cell growth and accumulation of polysaccharides, greatly improved contents of reducing sugars and soluble proteins, increased the activities of superoxide dismutase (SOD) and catalase (CAT) but decreased the activity of peroxidase(POD). The cell dry weight and production of polysaccharides were 32.6 g/L and 3.78 g/L, respectively. The analysis of cellular redox status showed that the ratio of reduced glutathione (GSH) to oxidized glutathione (GSSG) in cells and the activity of glutathione reductase were significantly increased by the addition of germanium dioxide. The suitable concentration of germanium dioxide was beneficial to the cell growth and the accumulation of polysaccharides.

Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form.

PubMed

Flynn, G; Stokes, K; Ryan, K M

2018-05-31

Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

Reduction of Defects in Germanium-Silicon

NASA Technical Reports Server (NTRS)

2003-01-01

Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a

Silicon and Germanium (111) Surface Reconstruction

NASA Astrophysics Data System (ADS)

Hao, You Gong

Silicon (111) surface (7 x 7) reconstruction has been a long standing puzzle. For the last twenty years, various models were put forward to explain this reconstruction, but so far the problem still remains unsolved. Recent ion scattering and channeling (ISC), scanning tunneling microscopy (STM) and transmission electron diffraction (TED) experiments reveal some new results about the surface which greatly help investigators to establish better models. This work proposes a silicon (111) surface reconstruction mechanism, the raising and lowering mechanism which leads to benzene -like ring and flower (raised atom) building units. Based on these building units a (7 x 7) model is proposed, which is capable of explaining the STM and ISC experiment and several others. Furthermore the building units of the model can be used naturally to account for the germanium (111) surface c(2 x 8) reconstruction and other observed structures including (2 x 2), (5 x 5) and (7 x 7) for germanium as well as the (/3 x /3)R30 and (/19 x /19)R23.5 impurity induced structures for silicon, and the higher temperature disordered (1 x 1) structure for silicon. The model is closely related to the silicon (111) surface (2 x 1) reconstruction pi-bonded chain model, which is the most successful model for the reconstruction now. This provides an explanation for the rather low conversion temperature (560K) of the (2 x 1) to the (7 x 7). The model seems to meet some problems in the explanation of the TED result, which is explained very well by the dimer, adatom and stacking fault (DAS) model proposed by Takayanagi. In order to explain the TED result, a variation of the atomic scattering factor is proposed. Comparing the benzene-like ring model with the DAS model, the former needs more work to explain the TED result and the later has to find a way to explain the silicon (111) surface (1 x 1) disorder experiment.

Chiral nematic porous germania and germanium/carbon films

NASA Astrophysics Data System (ADS)

Xu, Jing; Nguyen, Thanh-Dinh; Xie, Kai; Hamad, Wadood Y.; MacLachlan, Mark J.

2015-07-01

We report our extensive attempts and, ultimately, success to produce crack-free, chiral nematic GeO2/cellulose nanocrystal (CNC) composite films with tunable photonic properties from the controlled assembly of germanium(iv) alkoxides with the lyotropic liquid-crystalline CNCs in a mixed solvent of water/DMF. With different pyrolysis conditions, the photonic GeO2/CNC composites can be converted into freestanding chiral nematic films of amorphous GeO2, and semiconducting mesoporous GeO2/C and Ge/C replicas. These new materials are promising for chiral separation, enantioselective adsorption, catalysis, sensing, optoelectronics, and lithium ion batteries. Furthermore, the new, reproducible synthesis strategies developed may be applicable for constructing other composites and porous materials with chiral nematic ordering.We report our extensive attempts and, ultimately, success to produce crack-free, chiral nematic GeO2/cellulose nanocrystal (CNC) composite films with tunable photonic properties from the controlled assembly of germanium(iv) alkoxides with the lyotropic liquid-crystalline CNCs in a mixed solvent of water/DMF. With different pyrolysis conditions, the photonic GeO2/CNC composites can be converted into freestanding chiral nematic films of amorphous GeO2, and semiconducting mesoporous GeO2/C and Ge/C replicas. These new materials are promising for chiral separation, enantioselective adsorption, catalysis, sensing, optoelectronics, and lithium ion batteries. Furthermore, the new, reproducible synthesis strategies developed may be applicable for constructing other composites and porous materials with chiral nematic ordering. Electronic supplementary information (ESI) available: TGA, IR, Raman, TEM, SEM, BET. See DOI: 10.1039/c5nr02520f

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

NASA Astrophysics Data System (ADS)

Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

2017-11-01

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

PubMed

Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

2011-05-01

The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

Determining orbital particle parameters of impacts into germanium using morphology analysis and calibration data from hypervelocity impact experiments in the laboratory

NASA Technical Reports Server (NTRS)

Paul, Klaus G.

1995-01-01

This paper describes the work that is done at the Lehrstuhl fur Raumfahrttechnik (lrt) at the Technische Universitat Munchen to examine particle impacts into germanium surfaces which were flown on board the LDEF satellite. Besides the description of the processing of the samples, a brief overview of the particle launchers at our institute is given together with descriptions of impact morphology of high- and hypervelocity particles into germanium. Since germanium is a brittle, almost glass-like material, the impact morphology may also be interesting for anyone dealing with materials such as optics and solar cells. The main focus of our investigations is to learn about the impacting particle's properties, for example mass, velocity and direction. This is done by examining the morphology, various geometry parameters, crater obliqueness and crater volume.

Investigation of germanium quantum-well light sources.

PubMed

Fei, Edward T; Chen, Xiaochi; Zang, Kai; Huo, Yijie; Shambat, Gary; Miller, Gerald; Liu, Xi; Dutt, Raj; Kamins, Theodore I; Vuckovic, Jelena; Harris, James S

2015-08-24

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

PubMed

Vivien, Laurent; Polzer, Andreas; Marris-Morini, Delphine; Osmond, Johann; Hartmann, Jean Michel; Crozat, Paul; Cassan, Eric; Kopp, Christophe; Zimmermann, Horst; Fédéli, Jean Marc

2012-01-16

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

Size-Tunable Photothermal Germanium Nanocrystals.

PubMed

Sun, Wei; Zhong, Grace; Kübel, Christian; Jelle, Abdinoor A; Qian, Chenxi; Wang, Lu; Ebrahimi, Manuchehr; Reyes, Laura M; Helmy, Amr S; Ozin, Geoffrey A

2017-05-22

Germanium nanocrystals (ncGe) have not received as much attention as silicon nanocrystals (ncSi). However, Ge has demonstrated superiority over Si nanomaterials in some applications. Examples include, high charge-discharge rate lithium-ion batteries, small band-gap opto-electronic devices, and photo-therapeutics. When stabilized in an oxide matrix (ncGe/GeO x ), its high charge-retention has enabled non-volatile memories. It has also found utility as a high-capacity anode material for Li-ion batteries with impressive stability. Herein, we report an organic-free synthesis of size-controlled ncGe in a GeO x matrix as well as freestanding ncGe, via the thermal disproportionation of GeO prepared from thermally induced dehydration of Ge(OH) 2 . The photothermal effect of ncGe, quantified by Raman spectroscopy, is found to be size dependent and superior to ncSi. This advance suggests applications of ncGe in photothermal therapy, desalination, and catalysis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extreme ultraviolet probing of nonequilibrium dynamics in high energy density germanium

NASA Astrophysics Data System (ADS)

Principi, E.; Giangrisostomi, E.; Mincigrucci, R.; Beye, M.; Kurdi, G.; Cucini, R.; Gessini, A.; Bencivenga, F.; Masciovecchio, C.

2018-05-01

Intense femtosecond infrared laser pulses induce a nonequilibrium between thousands of Kelvin hot valence electrons and room-temperature ions in a germanium sample foil. The evolution of this exotic state of matter is monitored with time-resolved extreme ultraviolet absorption spectroscopy across the Ge M2 ,3 edge (≃30 eV ) using the FERMI free-electron laser. We analyze two distinct regimes in the ultrafast dynamics in laser-excited Ge: First, on a subpicosecond time scale, the electron energy distribution thermalizes to an extreme temperature unreachable in equilibrium solid germanium; then, during the following picoseconds, the lattice reacts strongly altering the electronic structure and resulting in melting to a metallic state alongside a breakdown of the local atomic order. Data analysis, based on a hybrid approach including both numerical and analytical calculations, provides an estimation of the electron and ion temperatures, the electron density of states, the carrier-phonon relaxation time, as well as the carrier density and lattice heat capacity under those extreme nonequilibrium conditions. Related structural anomalies, such as the occurrence of a transient low-density liquid phase and the possible drop in lattice heat capacity are discussed.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE PAGES

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.; ...

2017-06-01

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

Grafting of Oligo(ethylene glycol)-Functionalized Calix[4]arene-Tetradiazonium Salts for Antifouling Germanium and Gold Surfaces.

PubMed

Blond, Pascale; Mattiuzzi, Alice; Valkenier, Hennie; Troian-Gautier, Ludovic; Bergamini, Jean-François; Doneux, Thomas; Goormaghtigh, Erik; Raussens, Vincent; Jabin, Ivan

2018-05-29

Biosensors that can determine protein concentration and structure are highly desired for biomedical applications. For the development of such biosensors, the use of Fourier transform infrared (FTIR) spectroscopy with the attenuated internal total reflection (ATR) configuration is particularly attractive, but it requires appropriate surface functionalization of the ATR optical element. Indeed, the surface has to specifically interact with a target protein in close contact with the optical element and must display antifouling properties to prevent nonspecific adsorption of other proteins. Here, we report robust monolayers of calix[4]arenes bearing oligo(ethylene glycol) (oEG) chains, which were grafted on germanium and gold surfaces via their tetradiazonium salts. The formation of monolayers of oEGylated calix[4]arenes was confirmed by AFM, IR, and contact angle measurements. The antifouling properties of these modified surfaces were studied by ATR-FTIR spectroscopy and fluorescence microscopy, and the nonspecific absorption of bovine serum albumin was found to be reduced by 85% compared to that of unmodified germanium. In other words, the organic coating by oEGylated calix[4]arenes provides remarkable antifouling properties, opening the way for the design of germanium- or gold-based biosensors.

Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

PubMed

Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

2014-05-01

We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Napoli, D. R., E-mail: daniel.r.napoli@lnl.infn.it; Maggioni, G., E-mail: maggioni@lnl.infn.it; Carturan, S.

2016-07-07

High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

US-ROK Action Sheet 34: Safeguards Application of a Hand-held Mechanically Cooled Germanium Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dreyer, J.; Burks, M.; Ham, Y.

2015-10-20

This report summarizes results of Action Sheet 34 - for the cooperative efforts on the field testing and evaluation of a high-resolution, hand-held, gamma-ray spectrometer, known as SPG (Spectroscopic Planar Germanium), for safeguards application such as short notice inspections, UF6 analysis, enrichment determination, and other potential applications. The Spectroscopic Planar Germanium (SPG) has been demonstrated IAEA Physical Inventory Verification (PIV) in South Korea. This field test was a success and the feedback provided by KINAC, IAEA, and national laboratory staff was used to direct efforts to improve the instrument this year. Key points in this report include measurement results frommore » PIV, analysis of spectra with commercially available Ortec U235 and PC-FRAM, and completion of tripod and tungsten collimator and integration of user feedback.« less

Steps toward thin film metal thermistors with microsecond time response for shock temperature measurements of polymers

NASA Astrophysics Data System (ADS)

Taylor, N. E.; Williamson, D. M.; Jardine, A. P.

2014-05-01

Equations of state can be used to predict the relationship between pressure, volume and temperature. However, in shock physics, they are usually only constrained by experimental observations of pressure and volume. Direct observation of temperature in a shock is therefore valuable in constraining equations of state. Bloomquist and Sheffield (1980, 1981) and Rosenberg and Partom (1984) have attempted such observations in poly(methyl methacrylate) (PMMA). However, their results disagree strongly above 2GPa shock pressure. Here we present an improved fabrication technique, to examine this outstanding issue. We make use of the fact that the electrical resistivity of most metals is a known function of both pressure and temperature. If the change in resistance of a thin metal thermistor gauge is measured during a shock experiment of known pressure, the temperature can be calculated directly. The time response is limited by the time taken for the gauge to reach thermal equilibrium with the medium in which it is embedded. Gold gauges of thickness up to 200 nm have been produced by thermal evaporation, and fully embedded in PMMA. These reach thermal equilibrium with the host material in under 1 us, allowing temperature measurement within the duration of a plate impact experiment.

High-capacity nanostructured germanium-containing materials and lithium alloys thereof

DOEpatents

Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

2010-08-24

Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0germanium exhibit a combination of improved capacities, cycle lives, and/or cycling rates compared with similar electrodes made from graphite. These electrodes are useful as anodes for secondary electrochemical cells, for example, batteries and electrochemical supercapacitors.

Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

NASA Astrophysics Data System (ADS)

Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

2016-09-01

We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

Electrical Characteristics CuFe{sub 2}O{sub 4} Thick Film Ceramics Made with Different Screen Size Utilizing Fe{sub 2}O{sub 3} Nanopowder Derived from Yarosite for NTC Thermistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiendartun,; Syarif, Dani Gustaman

2010-10-24

Fabrication of CuFe{sub 2}O{sub 4} thick film ceramics utilizing Fe{sub 2}O{sub 3} derived from yarosite using screen printing technique for NTC thermistor has been carried out. Effect of thickness variation due to different size of screen (screen 225; 300 and 375 mesh) has been studied. X-ray diffraction analyses (XRD) was done to know crystal structure and phases formation. SEM analyses was carried out to know microstructure of the films. Electrical properties characterization was done through measurement of electrical resistance at various temperatures (room temperature to 100 deg. C). The XRD data showed that the films crystalize in tetragonal spinel. Themore » SEM images showed that the screen with the smaller of the hole size, made the grain size was bigger. Electrical data showed that the larger the screen different size thickness variation (mesh), the larger the resistance, thermistor constant and sensitivity. From the electrical characteristics data, it was known that the electrical characteristics of the CuFe{sub 2}O{sub 4} thick film ceramics followed the NTC characteristic. The value of B and R{sub RT} of the produced CuFe{sub 2}O{sub 4} ceramics namely B = 3241-3484 K and R{sub RT} = 25.6-87.0 M Ohm, fitted market requirement.« less

The isotope composition of inorganic germanium in seawater and deep sea sponges

NASA Astrophysics Data System (ADS)

Guillermic, Maxence; Lalonde, Stefan V.; Hendry, Katharine R.; Rouxel, Olivier J.

2017-09-01

Although dissolved concentrations of germanium (Ge) and silicon (Si) in modern seawater are tightly correlated, uncertainties still exist in the modern marine Ge cycle. Germanium stable isotope systematics in marine systems should provide additional constraints on marine Ge sources and sinks, however the low concentration of Ge in seawater presents an analytical challenge for isotopic measurement. Here, we present a new method of pre-concentration of inorganic Ge from seawater which was applied to measure three Ge isotope profiles in the Southern Ocean and deep seawater from the Atlantic and Pacific Oceans. Germanium isotopic measurements were performed on Ge amounts as low as 2.6 ng using a double-spike approach and a hydride generation system coupled to a MC-ICP-MS. Germanium was co-precipitated with iron hydroxide and then purified through anion-exchange chromatography. Results for the deep (i.e. >1000 m depth) Pacific Ocean off Hawaii (nearby Loihi Seamount) and the deep Atlantic off Bermuda (BATS station) showed nearly identical δ74/70Ge values at 3.19 ± 0.31‰ (2SD, n = 9) and 2.93 ± 0.10‰ (2SD, n = 2), respectively. Vertical distributions of Ge concentration and isotope composition in the deep Southern Ocean for water depth > 1300 m yielded an average δ74/70Ge = 3.13 ± 0.25‰ (2SD, n = 14) and Ge/Si = 0.80 ± 0.09 μmol/mol (2SD, n = 12). Significant variations in δ74/70Ge, from 2.62 to 3.71‰, were measured in the first 1000 m in one station of the Southern Ocean near Sars Seamount in the Drake Passage, with the heaviest values measured in surface waters. Isotope fractionation by diatoms during opal biomineralization may explain the enrichment in heavy isotopes for both Ge and Si in surface seawater. However, examination of both oceanographic parameters and δ74/70Ge values suggest also that water mass mixing and potential contribution of shelf-derived Ge also could contribute to the variations. Combining these results with new Ge isotope data

Multi-element germanium detectors for synchrotron applications

DOE PAGES

Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.; ...

2018-04-27

In this paper, we have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. Finally, we will discuss the technical details of the systems,more » and present some of the results from them.« less

Multi-element germanium detectors for synchrotron applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.

In this paper, we have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. Finally, we will discuss the technical details of the systems,more » and present some of the results from them.« less

TIGRESS highly-segmented high-purity germanium clover detector

NASA Astrophysics Data System (ADS)

Scraggs, H. C.; Pearson, C. J.; Hackman, G.; Smith, M. B.; Austin, R. A. E.; Ball, G. C.; Boston, A. J.; Bricault, P.; Chakrawarthy, R. S.; Churchman, R.; Cowan, N.; Cronkhite, G.; Cunningham, E. S.; Drake, T. E.; Finlay, P.; Garrett, P. E.; Grinyer, G. F.; Hyland, B.; Jones, B.; Leslie, J. R.; Martin, J.-P.; Morris, D.; Morton, A. C.; Phillips, A. A.; Sarazin, F.; Schumaker, M. A.; Svensson, C. E.; Valiente-Dobón, J. J.; Waddington, J. C.; Watters, L. M.; Zimmerman, L.

2005-05-01

The TRIUMF-ISAC Gamma-Ray Escape-Suppressed Spectrometer (TIGRESS) will consist of twelve units of four high-purity germanium (HPGe) crystals in a common cryostat. The outer contacts of each crystal will be divided into four quadrants and two lateral segments for a total of eight outer contacts. The performance of a prototype HPGe four-crystal unit has been investigated. Integrated noise spectra for all contacts were measured. Energy resolutions, relative efficiencies for both individual crystals and for the entire unit, and peak-to-total ratios were measured with point-like sources. Position-dependent performance was measured by moving a collimated source across the face of the detector.

Infrared absorption study of neutron-transmutation-doped germanium

NASA Technical Reports Server (NTRS)

Park, I. S.; Haller, E. E.

1988-01-01

Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

The Contrast in Outgassing of Germanium Between Shergottites and Nakhlites

NASA Technical Reports Server (NTRS)

Yang, S.; Humayun, M.; Righter, K.; Peslier, A. H.

2018-01-01

Final Paper and not the abstract is attached. Introduction: Germanium is generally thought to follow Si in its geochemical behavior, but little data has existed to rigorously understand the behavior of Ge in the Martian mantle. Germanium is known to be more siderophile than Si, and its partitioning into the martian core has been studied by. Typical abundances in igneous martian meteorites range from 0.5-3 ppm, a larger range than what is observed in terrestrial basalts (1.5 +/- 0.1 ppm). In situ measurements by the MER and MSL rovers have revealed a surprisingly large range in Ge abundances in surface rocks (30-650 ppm), but many igneous rocks and soils are shown to have greater than 30 ppm Ge (the detection limit of the APXS). Recently, reported that shergottite minerals showed a depletion of Ge with increasing fractionation, while nakhlites and chassignites exhibited Ge behavior compatible with closed system igneous differentiation. They interpreted their observations as tentatively indicating volcanic outgassing of Ge from shergottites (but not from nakhlite-chassignites) with recondensation of the Ge vapor into soils and breccias. Recent experimental studies show that Ge is significantly volatile from magmas. In this study, we followed up on those results by analyzing minerals in five nakhlites and five shergottites by laser ablation ICP-MS (LA-ICP-MS). See Attached

Bioavailable concentrations of germanium and rare earth elements in soil as affected by low molecular weight organic acids and root exudates

NASA Astrophysics Data System (ADS)

Wiche, Oliver; Székely, Balázs; Kummer, Nicolai-Alexeji; Heinemann, Ute; Tesch, Silke; Heilmeier, Hermann

2014-05-01

Availability of elements in soil to plant is generally dependent on the solubility and mobility of elements in soil solution which is controlled by soil, elemental properties and plant-soil interactions. Low molecular organic acids or other root exudates may increase mobility and availability of certain elements for plants as an effect of lowering pH in the rhizosphere and complexation. However, these processes take place in a larger volume in soil, therefore to understand their nature, it is also important to know in which layers of the soil what factors modify these processes. In this work the influence of citric acid and root exudates of white lupin (Lupinus albus L.) on bioavailable concentrations of germanium, lanthan, neodymium, gadolinium and erbium in soil solution and uptake in root and shoot of rape (Brassica napus L.), comfrey (Symphytum officinale L.), common millet (Panicum milliaceum L.) and oat (Avena sativa L.) was investigated. Two different pot experiments were conducted: (1) the mentioned plant species were treated with nutrient solutions containing various amount of citric acid; (2) white lupin was cultivated in mixed culture (0 % lupin, 33 % lupin) with oat (Avena sativa L.) and soil solution was obtained by plastic suction cups placed at various depths. As a result, addition of citric acid significantly increased germanium concentrations in plant tissue of comfrey and rape and increased translocation of germanium, lanthan, neodymium, gadolinium and erbium from root to shoot. The cultivation of white lupin in mixed culture with oat led to significantly higher concentrations of germanium and increasing concentrations of lanthan, neodymium, gadolinium and erbium in soil solution and aboveground plant tissue. In these pots concentrations of citric acid in soil solution were significantly higher than in the control. The results show, that low molecular organic acids exuded by plant roots are of great importance for the mobilization of germanium

EVALUATION OF THE IMPACT OF THE DEFENSE WASTE PROCESSING FACILITY (DWPF) LABORATORY GERMANIUM OXIDE USE ON RECYCLE TRANSFERS TO THE H-TANK FARM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jantzen, C.; Laurinat, J.

2011-08-15

When processing High Level Waste (HLW) glass, the Defense Waste Processing Facility (DWPF) cannot wait until the melt or waste glass has been made to assess its acceptability, since by then no further changes to the glass composition and acceptability are possible. Therefore, the acceptability decision is made on the upstream feed stream, rather than on the downstream melt or glass product. This strategy is known as 'feed forward statistical process control.' The DWPF depends on chemical analysis of the feed streams from the Sludge Receipt and Adjustment Tank (SRAT) and the Slurry Mix Evaporator (SME) where the frit plusmore » adjusted sludge from the SRAT are mixed. The SME is the last vessel in which any chemical adjustments or frit additions can be made. Once the analyses of the SME product are deemed acceptable, the SME product is transferred to the Melter Feed Tank (MFT) and onto the melter. The SRAT and SME analyses have been analyzed by the DWPF laboratory using a 'Cold Chemical' method but this dissolution did not adequately dissolve all the elemental components. A new dissolution method which fuses the SRAT or SME product with cesium nitrate (CsNO{sub 3}), germanium (IV) oxide (GeO{sub 2}) and cesium carbonate (Cs{sub 2}CO{sub 3}) into a cesium germanate glass at 1050 C in platinum crucibles has been developed. Once the germanium glass is formed in that fusion, it is readily dissolved by concentrated nitric acid (about 1M) to solubilize all the elements in the SRAT and/or SME product for elemental analysis. When the chemical analyses are completed the acidic cesium-germanate solution is transferred from the DWPF analytic laboratory to the Recycle Collection Tank (RCT) where the pH is increased to {approx}12 M to be released back to the tank farm and the 2H evaporator. Therefore, about 2.5 kg/yr of GeO{sub 2}/year will be diluted into 1.4 million gallons of recycle. This 2.5 kg/yr of GeO{sub 2} may increase to 4 kg/yr when improvements are implemented to

Time-resolved measurements of the angular distribution of lasing at 23.6 nm in Ne-like germanium

NASA Astrophysics Data System (ADS)

Kodama, R.; Neely, D.; Dwivedi, L.; Key, M. H.; Krishnan, J.; Lewis, C. L. S.; O'Neill, D.; Norreys, P.; Pert, G. J.; Ramsden, S. A.; Tallents, G. J.; Uhomoibhi, J.; Zhang, J.

1992-06-01

The time dependence of the angular distribution of soft X-ray lasing at 23.6 nm in Ne-like germanium has been measured using a streak camera. Slabs of germanium have been irradiated over ≈ 22 mm length × 100 μm width with three line focussed beams of the SERC Rutherford Appleton Laboratory VULCAN laser at 1.06 μm wavelength. The laser beam sweeps in time towards the target surface plane and the divergence broadens with time. The change of the peak intensity pointing and the broadening of the profile with time are consistent with expectations of the time dependence of refraction and divergence due to density gradients in the plasma.

Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

NASA Astrophysics Data System (ADS)

Hasanah, L.; Suhendi, E.; Khairrurijal

2018-05-01

Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

Measurement of the quantum conductance of germanium by an electrochemical scanning tunneling microscope break junction based on a jump-to-contact mechanism.

PubMed

Xie, Xufen; Yan, Jiawei; Liang, Jinghong; Li, Jijun; Zhang, Meng; Mao, Bingwei

2013-10-01

We present quantum conductance measurements of germanium by means of an electrochemical scanning tunneling microscope (STM) break junction based on a jump-to-contact mechanism. Germanium nanowires between a platinum/iridium tip and different substrates were constructed to measure the quantum conductance. By applying appropriate potentials to the substrate and the tip, the process of heterogeneous contact and homogeneous breakage was realized. Typical conductance traces exhibit steps at 0.025 and 0.05 G0. The conductance histogram indicates that the conductance of germanium nanowires is located between 0.02 and 0.15 G0 in the low-conductance region and is free from the influence of substrate materials. However, the distribution of conductance plateaus is too discrete to display distinct peaks in the conductance histogram of the high-conductance region. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PCT Databank: A Tool for Planning, Implementation and Monitoring of Integrated Preventive Chemotherapy for Control of Neglected Tropical Diseases (NTD)

PubMed Central

Mikhailov, Alexei; Yajima, Aya; Mbabazi, PS; Gabrielli, Albis F.; Montresor, Antonio; Engels, Dirk

2017-01-01

The integration of vertical control programmes of neglected tropical diseases (NTDs) aims at containing operational cost, simplifies the application of the control measures and extends the intervention coverage. The Preventive Chemotherapy and Transmission Control (PCT) Databank was established by the World Health Organization to facilitate the sharing of data among the different partners involved in control activities and collects and compiles historical and current information on disease-specific epidemiological situation, the geographical overlapping of NTDs and the progress of control activities in all the NTD-endemic countries. The summary of country-specific epidemiological maps and the progress of control activities is available online as the online PCT Databank and Country Profiles. The annual progress of preventive chemotherapy (PC) interventions targeting at specific NTDs is also annually reported in the Weekly Epidemiological Record (WER). In this paper, we elucidated the methodology of data collection, compilation and mapping to establish the PCT Databank and presented the key features of the associated three online outputs, i.e. the online PCT Databank, the Country Profile and the WER. PMID:22357399

Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

PubMed

Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

2013-07-31

Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

SU-C-201-02: Quantitative Small-Animal SPECT Without Scatter Correction Using High-Purity Germanium Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gearhart, A; Peterson, T; Johnson, L

2015-06-15

Purpose: To evaluate the impact of the exceptional energy resolution of germanium detectors for preclinical SPECT in comparison to conventional detectors. Methods: A cylindrical water phantom was created in GATE with a spherical Tc-99m source in the center. Sixty-four projections over 360 degrees using a pinhole collimator were simulated. The same phantom was simulated using air instead of water to establish the true reconstructed voxel intensity without attenuation. Attenuation correction based on the Chang method was performed on MLEM reconstructed images from the water phantom to determine a quantitative measure of the effectiveness of the attenuation correction. Similarly, a NEMAmore » phantom was simulated, and the effectiveness of the attenuation correction was evaluated. Both simulations were carried out using both NaI detectors with an energy resolution of 10% FWHM and Ge detectors with an energy resolution of 1%. Results: Analysis shows that attenuation correction without scatter correction using germanium detectors can reconstruct a small spherical source to within 3.5%. Scatter analysis showed that for standard sized objects in a preclinical scanner, a NaI detector has a scatter-to-primary ratio between 7% and 12.5% compared to between 0.8% and 1.5% for a Ge detector. Preliminary results from line profiles through the NEMA phantom suggest that applying attenuation correction without scatter correction provides acceptable results for the Ge detectors but overestimates the phantom activity using NaI detectors. Due to the decreased scatter, we believe that the spillover ratio for the air and water cylinders in the NEMA phantom will be lower using germanium detectors compared to NaI detectors. Conclusion: This work indicates that the superior energy resolution of germanium detectors allows for less scattered photons to be included within the energy window compared to traditional SPECT detectors. This may allow for quantitative SPECT without implementing

Spontaneous time reversal symmetry breaking in atomically confined two-dimensional impurity bands in silicon and germanium

NASA Astrophysics Data System (ADS)

Ghosh, Arindam

Three-dimensional bulk-doped semiconductors, in particular phosphorus (P)-doped silicon (Si) and germanium (Ge), are among the best studied systems for many fundamental concepts in solid state physics, ranging from the Anderson metal-insulator transition to the many-body Coulomb interaction effects on quantum transport. Recent advances in material engineering have led to vertically confined doping of phosphorus (P) atoms inside bulk crystalline silicon and germanium, where the electron transport occurs through one or very few atomic layers, constituting a new and unique platform to investigate many of these phenomena at reduced dimensions. In this talk I shall present results of extensive quantum transport experiments in delta-doped silicon and germanium epilayers, over a wide range of doping density that allow independent tuning of the on-site Coulomb interaction and hopping energy scales. We find that low-frequency flicker noise, or the 1 / f noise, in the electrical conductance of these systems is exceptionally low, and in fact among the lowest when compared with other low-dimensional materials. This is attributed to the physical separation of the conduction electrons, embedded inside the crystalline semiconductor matrix, from the charged fluctuators at the surface. Most importantly, we find a remarkable suppression of weak localization effects, including the quantum correction to conductivity and universal conductance fluctuations, with decreasing doping density or, equivalently, increasing effective on-site Coulomb interaction. In-plane magneto-transport measurements indicate the presence of intrinsic local spin fluctuations at low doping although no signatures of long range magnetic order could be identified. We argue that these results indicate a spontaneous breakdown of time reversal symmetry, which is one of the most fundamental and robust symmetries of nonmagnetic quantum systems. While the microscopic origin of this spontaneous time reversal symmetry

A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications

NASA Astrophysics Data System (ADS)

Lin, Yiding; Ma, Danhao; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng

2018-02-01

A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.

Strategies for single-point diamond machining a large format germanium blazed immersion grating

NASA Astrophysics Data System (ADS)

Montesanti, R. C.; Little, S. L.; Kuzmenko, P. J.; Bixler, J. V.; Jackson, J. L.; Lown, J. G.; Priest, R. E.; Yoxall, B. E.

2016-07-01

A large format germanium immersion grating was flycut with a single-point diamond tool on the Precision Engineering Research Lathe (PERL) at the Lawrence Livermore National Laboratory (LLNL) in November - December 2015. The grating, referred to as 002u, has an area of 59 mm x 67 mm (along-groove and cross-groove directions), line pitch of 88 line/mm, and blaze angle of 32 degree. Based on total groove length, the 002u grating is five times larger than the previous largest grating (ZnSe) cut on PERL, and forty-five times larger than the previous largest germanium grating cut on PERL. The key risks associated with cutting the 002u grating were tool wear and keeping the PERL machine running uninterrupted in a stable machining environment. This paper presents the strategies employed to mitigate these risks, introduces pre-machining of the as-etched grating substrate to produce a smooth, flat, damage-free surface into which the grooves are cut, and reports on trade-offs that drove decisions and experimental results.

Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

NASA Astrophysics Data System (ADS)

Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

2016-07-01

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

PubMed

Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

2016-07-22

Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

Quantum ballistic transport in strained epitaxial germanium

NASA Astrophysics Data System (ADS)

Gul, Y.; Holmes, S. N.; Newton, P. J.; Ellis, D. J. P.; Morrison, C.; Pepper, M.; Barnes, C. H. W.; Myronov, M.

2017-12-01

Large scale fabrication using Complementary Metal Oxide Semiconductor compatible technology of semiconductor nanostructures that operate on the principles of quantum transport is an exciting possibility now due to the recent development of ultra-high mobility hole gases in epitaxial germanium grown on standard silicon substrates. We present here a ballistic transport study of patterned surface gates on strained Ge quantum wells with SiGe barriers, which confirms the quantum characteristics of the Ge heavy hole valence band structure in 1-dimension. Quantised conductance at multiples of 2e2/h is a universal feature of hole transport in Ge up to 10 × (2e2/h). The behaviour of ballistic plateaus with finite source-drain bias and applied magnetic field is elucidated. In addition, a reordering of the ground state is observed.

On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors

NASA Astrophysics Data System (ADS)

Darken, L.

1994-02-01

The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood.

Atomic Scale Structure of (001) Hydrogen-Induced Platelets in Germanium

NASA Astrophysics Data System (ADS)

David, Marie-Laure; Pizzagalli, Laurent; Pailloux, Fréderic; Barbot, Jean François

2009-04-01

An accurate characterization of the structure of hydrogen-induced platelets is a prerequisite for investigating both hydrogen aggregation and formation of larger defects. On the basis of quantitative high resolution transmission electron microscopy experiments combined with extensive first principles calculations, we present a model for the atomic structure of (001) hydrogen-induced platelets in germanium. It involves broken Ge-Ge bonds in the [001] direction that are dihydride passivated, vacancies, and trapped H2 molecules, showing that the species involved in platelet formation depend on the habit plane. This model explains all previous experimental observations.

Three holes bound to a double acceptor - Be(+) in germanium

NASA Technical Reports Server (NTRS)

Haller, E. E.; Mcmurray, R. E., Jr.; Falicov, L. M.; Haegel, N. M.; Hansen, W. L.

1983-01-01

A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single crystals. This new center, Be(+), has a hole binding energy of about 5 meV and is only present when free holes are generated by ionization of either neutral shallow acceptors or neutral Be double acceptors. The Be(+) center thermally ionizes above 4 K. It disappears at a uniaxial stress higher than about a billion dyn/sq cm parallel to (111) as a result of the lifting of the valence-band degeneracy.

Refractive Index of Silicon and Germanium and Its Wavelength and Temperature Derivatives.

DTIC Science & Technology

1979-03-01

of a misnomer and, although Clemens Winkler is cred- ited with the discovery of the element in 1886, germanium has become an element of interest in...rather small in covalent semiconductors like Si and Ge, it increases, however, with increasing polarity. Both the radio -frequency mea- surement and...temperature region 250-480 K, but nonlinearity progressively predominates at lower temperatures, as seen from figure 7. Lukes and Schmidt [18] studied

Lithium effects on the mechanical and electronic properties of germanium nanowires

NASA Astrophysics Data System (ADS)

González-Macías, A.; Salazar, F.; Miranda, A.; Trejo-Baños, A.; Pérez, L. A.; Carvajal, E.; Cruz-Irisson, M.

2018-04-01

Semiconductor nanowire arrays promise rapid development of a new generation of lithium (Li) batteries because they can store more Li atoms than conventional crystals due to their large surface areas. During the charge-discharge process, the electrodes experience internal stresses that fatigue the material and limit the useful life of the battery. The theoretical study of electronic and mechanical properties of lithiated nanowire arrays allows the designing of electrode materials that could improve battery performance. In this work, we present a density functional theory study of the electronic band structure, formation energy, binding energy, and Young’s modulus (Y) of hydrogen passivated germanium nanowires (H-GeNWs) grown along the [111] and [001] crystallographic directions with surface and interstitial Li atoms. The results show that the germanium nanowires (GeNWs) with surface Li atoms maintain their semiconducting behavior but their energy gap size decreases when the Li concentration grows. In contrast, the GeNWs can have semiconductor or metallic behavior depending on the concentration of the interstitial Li atoms. On the other hand, Y is an indicator of the structural changes that GeNWs suffer due to the concentration of Li atoms. For surface Li atoms, Y stays almost constant, whereas for interstitial Li atoms, the Y values indicate important structural changes in the GeNWs.

Effect of germanium dioxide on growth of Spirulina platensis

NASA Astrophysics Data System (ADS)

Cao, Ji-Xiang

1996-12-01

This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

A model for the effects of germanium on silica biomineralization in choanoflagellates

PubMed Central

Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

2016-01-01

Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

Controlled synthesis of germanium nanoparticles by nonthermal plasmas

NASA Astrophysics Data System (ADS)

Ahadi, Amir Mohammad; Hunter, Katharine I.; Kramer, Nicolaas J.; Strunskus, Thomas; Kersten, Holger; Faupel, Franz; Kortshagen, Uwe R.

2016-02-01

The size, composition, and crystallinity of plasma produced nanoparticles are crucial factors for their physical and chemical properties. Here, we investigate the role of the process gas composition, particularly the hydrogen (H2) flow rate, on germanium (Ge) nanoparticles synthesized from a chlorinated precursor by nonthermal plasma. We demonstrate that the gas composition can significantly change the nanoparticle size and also adjust the surface chemistry by altering the dominant reaction mechanisms. A red shift of the Ge-Clx infrared absorptions with increasing H2 flow indicates a weakening of the Ge-Clx bonds at high H2 content. Furthermore, by changing the gas composition, the nanoparticles microstructure can be controlled from mostly amorphous at high hydrogen flow to diamond cubic crystalline at low hydrogen flow.

Molybdenum blue reaction and determination of phosphorus in waters containing arsenic, silicon, and germanium

USGS Publications Warehouse

Levine, H.; Rowe, J.J.; Grimaldi, F.S.

1955-01-01

Microgram amounts of phosphate are usually determined by the molybdenum blue reaction, but this reaction is not specific for phosphorus. The research established the range of conditions under which phosphate, arsenate, silicate, and germanate give the molybdenum blue reaction for differentiating these elements, and developed a method for the determination of phosphate in waters containing up to 10 p.p.m. of the oxides of germanium, arsenic(V), and silicon. With stannous chloride or 1-amino-2-naphthol-4-sulfonic acid as the reducing agent no conditions were found for distinguishing silicate from germanate and phosphate from arsenate. In the recommended procedure the phosphate is concentrated by coprecipitation on aluminum hydroxide, and coprecipitated arsenic, germanium, and silicon are volatilized by a mixture of hydrofluoric, hydrochloric, and hydrobromic acids prior to the determination of phosphate. The authors are able to report that the total phosphorus content of several samples of sea water from the Gulf of Mexico ranged from 0.018 to 0.059 mg. of phosphorus pentoxide per liter of water.

Effect on magnetic properties of germanium encapsulated C60 fullerene

NASA Astrophysics Data System (ADS)

Umran, Nibras Mossa; Kumar, Ranjan

2013-02-01

Structural and electronic properties of Gen(n = 1-4) doped C60 fullerene are investigated with ab initio density functional theory calculations by using an efficient computer code, known as SIESTA. The pseudopotentials are constructed using a Trouiller-Martins scheme, to describe the interaction of valence electrons with the atomic cores. In endohedral doped embedding of more germanium atoms complexes we have seen that complexes are stable and thereafter cage break down. We have also investigated that binding energy, electronic affinity increases and magnetic moment oscillating behavior as the number of semiconductor atoms in C60 fullerene goes on increasing.

Fabrication and characterization of a germanium nanowire light emitting diode

NASA Astrophysics Data System (ADS)

Greil, Johannes; Bertagnolli, Emmerich; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Lugstein, Alois

2017-12-01

In this letter, we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.

Respiratory monitoring system based on the nasal pressure technique for the analysis of sleep breathing disorders: Reduction of static and dynamic errors, and comparisons with thermistors and pneumotachographs

NASA Astrophysics Data System (ADS)

Alves de Mesquita, Jayme; Lopes de Melo, Pedro

2004-03-01

Thermally sensitive devices—thermistors—have usually been used to monitor sleep-breathing disorders. However, because of their long time constant, these devices are not able to provide a good characterization of fast events, like hypopneas. Nasal pressure recording technique (NPR) has recently been suggested to quantify airflow during sleep. It is claimed that the short time constants of the devices used to implement this technique would allow an accurate analysis of fast abnormal respiratory events. However, these devices present errors associated with nonlinearities and acoustic resonance that could reduce the diagnostic value of the NPR. Moreover, in spite of the high scientific and clinical potential, there is no detailed description of a complete instrumentation system to implement this promising technique in sleep studies. In this context, the purpose of this work was twofold: (1) describe the development of a flexible NPR device and (2) evaluate the performance of this device when compared to pneumotachographs (PNTs) and thermistors. After the design details are described, the system static accuracy is evaluated by a comparative analysis with a PNT. This analysis revealed a significant reduction (p<0.001) of the static error when system nonlinearities were reduced. The dynamic performance of the NPR system was investigated by frequency response analysis and time constant evaluations and the results showed that the developed device response was as good as PNT and around 100 times faster (τ=5,3 ms) than thermistors (τ=512 ms). Experimental results obtained in simulated clinical conditions and in a patient are presented as examples, and confirmed the good features achieved in engineering tests. These results are in close agreement with physiological fundamentals, supplying substantial evidence that the improved dynamic and static characteristics of this device can contribute to a more accurate implementation of medical research projects and to improve the

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Germanium ``hexa'' detector: production and testing

NASA Astrophysics Data System (ADS)

Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Hirsemann, H.; Struth, B.; Fritzsch, T.; Rothermund, M.; Zuvic, M.; Lampert, M. O.; Askar, M.; Graafsma, H.

2017-01-01

Here we present new result on the testing of a Germanium sensor for X-ray radiation. The system is made of 3 × 2 Medipix3RX chips, bump-bonded to a monolithic sensor, and is called ``hexa''. Its dimensions are 45 × 30 mm2 and the sensor thickness was 1.5 mm. The total number of the pixels is 393216 in the matrix 768 × 512 with pixel pitch 55 μ m. Medipix3RX read-out chip provides photon counting read-out with single photon sensitivity. The sensor is cooled to -126°C and noise levels together with flat field response are measured. For -200 V polarization bias, leakage current was 4.4 mA (3.2 μ A/mm2). Due to higher leakage around 2.5% of all pixels stay non-responsive. More than 99% of all pixels are bump bonded correctly. In this paper we present the experimental set-up, threshold equalization procedure, image acquisition and the technique for bump bond quality estimate.

Innovative remotely-controlled bending device for thin silicon and germanium crystals

NASA Astrophysics Data System (ADS)

De Salvador, D.; Carturan, S.; Mazzolari, A.; Bagli, E.; Bandiera, L.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Romagnoni, M.; Sytov, A.

2018-04-01

Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of 0.855-GeV electrons at different bending radii. We report the description and characterization of the innovative bending device developed at INFN Laboratori Nazionali di Legnaro (LNL).

Measurement of the low-energy quenching factor in germanium using an Y 88 / Be photoneutron source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scholz, B. J.; Chavarria, A. E.; Collar, J. I.

2016-12-01

We employ an 88Y/Be photoneutron source to derive the quenching factor for neutron-induced nuclear recoils in germanium, probing recoil energies from a few hundred eVnr to 8.5 keV nr. A comprehensive Monte Carlo simulation of our setup is compared to experimental data employing a Lindhard model with a free electronic energy loss k and an adiabatic correction for sub-keVnr nuclear recoils. The best fit k=0.179±0.001 obtained using a Monte Carlo Markov chain (MCMC) ensemble sampler is in good agreement with previous measurements, confirming the adequacy of the Lindhard model to describe the stopping of few-keV ions in germanium crystals at a temperaturemore » of ~77 K. This value of k corresponds to a quenching factor of 13.7% to 25.3% for nuclear recoil energies between 0.3 and 8.5 keV nr, respectively.« less

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Germanium detectors in homeland security at PNNL

DOE PAGES

Stave, S.

2015-05-01

Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADESmore » HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.« less

Tunnel current across linear homocatenated germanium chains

NASA Astrophysics Data System (ADS)

Matsuura, Yukihito

2014-01-01

The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e-βL, of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge-Ge bond length is longer than the Si-Si bond length.

Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

NASA Astrophysics Data System (ADS)

Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

2017-02-01

In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

Search for global-minimum geometries of medium-sized germanium clusters. II. Motif-based low-lying clusters Ge21-Ge29

NASA Astrophysics Data System (ADS)

Yoo, S.; Zeng, X. C.

2006-05-01

We performed a constrained search for the geometries of low-lying neutral germanium clusters GeN in the size range of 21⩽N⩽29. The basin-hopping global optimization method is employed for the search. The potential-energy surface is computed based on the plane-wave pseudopotential density functional theory. A new series of low-lying clusters is found on the basis of several generic structural motifs identified previously for silicon clusters [S. Yoo and X. C. Zeng, J. Chem. Phys. 124, 054304 (2006)] as well as for smaller-sized germanium clusters [S. Bulusu et al., J. Chem. Phys. 122, 164305 (2005)]. Among the generic motifs examined, we found that two motifs stand out in producing most low-lying clusters, namely, the six/nine motif, a puckered-hexagonal-ring Ge6 unit attached to a tricapped trigonal prism Ge9, and the six/ten motif, a puckered-hexagonal-ring Ge6 unit attached to a bicapped antiprism Ge10. The low-lying clusters obtained are all prolate in shape and their energies are appreciably lower than the near-spherical low-energy clusters. This result is consistent with the ion-mobility measurement in that medium-sized germanium clusters detected are all prolate in shape until the size N ˜65.

Structural and optical properties of axial silicon-germanium nanowire heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu; Kamins, T. I.

2015-12-21

Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Ramanmore » scattering measurements.« less

Doping of germanium nanowires grown in presence of PH3

NASA Astrophysics Data System (ADS)

Tutuc, E.; Chu, J. O.; Ott, J. A.; Guha, S.

2006-12-01

The authors study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of phosphine (PH3), used as a dopant precursor. The device characteristics of the ensuing nanowire field effect transistors (FETs) indicate n-type, highly doped nanowires. Using a combination of different nanowire growth sequences and their FET characteristics, the authors determine that phosphorus incorporates predominately via the conformal growth, which accompanies the acicular, nanowire growth. As such, the Ge nanowires grown in the presence of PH3 contain a phosphorus doped shell and an undoped core. The authors determine the doping level in the shell to be ≃(1-4)×1019cm-3.

Bulk and surface event identification in p-type germanium detectors

NASA Astrophysics Data System (ADS)

Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

2018-04-01

The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

Flexible radio-frequency single-crystal germanium switch on plastic substrates

NASA Astrophysics Data System (ADS)

Qin, Guoxuan; Cai, Tianhao; Yuan, Hao-Chih; Seo, Jung-Hun; Ma, Jianguo; Ma, Zhenqiang

2014-04-01

This Letter presents the realization and characterizations of the flexible radio-frequency (RF)/microwave switches on plastic substrates employing single-crystal germanium (Ge) nanomembranes. The fabricated flexible Ge single-pole, single-throw (SPST) switches display high frequency responses (e.g., insertion loss of <1.3 dB at up to 30 GHz and isolation >10 dB at up to ˜13 GHz). RF performance tradeoff exists for the flexible Ge switches and the major affecting parameters are determined. The flexible Ge SPST switch shows better RF property to that of the flexible Si SPST switch. Underlying mechanism is investigated by theoretical analysis and modeling of switches with different structures.

Limits on Spin-independent Couplings of Light Dark Matter WIMPs with a p-type Point-contact Germanium Detector

NASA Astrophysics Data System (ADS)

Lin, S. T.; Wong, H. T.

New limits on spin-independent WIMP-nucleon coupling using 39.5 kg-days of data taken with a p-type point-contact germanium detector with fiducial mass of 840 g at the Kuo-Sheng Reactor Neutrino Laboratory (KSNL) is presented. Charactering and understanding the anomalous surface behaviour is of particular significance to this study. The slow rise-time of surface events is identified via software pulse shape analysis techniques. In addition, the signal-retaining and background-rejecting efficiencies are implied to clarify the actual bulk and surface events in the mixed regime at sub-keV range. Both efficiencies are evaluated with calibration sources and a novel n-type point-contact germanium detector. Efficiencies-corrected background spectra from the low-background facility at KSNL are derived. Part of the parameter space in cross-section versus WIMP-mass is probed and excluded.

Solution synthesis of germanium nanowires using a Ge+2 alkoxide precursor.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, Timothy J.; Tribby, Louis, J; Bunge, Scott D.

2006-02-01

A simple solution synthesis of germanium (Ge{sup 0}) nanowires under mild conditions (<400 C and 1 atm) was demonstrated using germanium 2,6 dibutylphenoxide Ge(DBP){sub 2} (1) as the precursor where DBP = OC{sub 6}H{sub 3}(C(CH{sub 3}){sub 3}){sub 2}-2,6. Compound 1, synthesized from Ge(NR{sub 2}){sub 2} where R = SiMe{sub 3} and two equivalents of DBP-H, was characterized as a mononuclear species by single crystal X-ray diffraction. Dissolution of 1 in oleylamine, followed by rapid injection into a 1-octadecene solution heated to 300 C under an atmosphere of Ar, led to the formation of Ge{sup 0} nanowires. The Ge{sup 0} nanowiresmore » were characterized by transmission electron microscopy (TEM), X-ray diffraction analysis, and Fourier transform infrared spectroscopy. These characterizations revealed that the nanowires are single crystalline in the cubic phase and coated with oleylamine surfactant. We also observed that the nanowire length (0.1 to 10 {micro}m) increases with increasing temperature (285 to 315 C) and time (5 to 60 min). Two growth mechanisms are proposed based on the TEM images intermittently taken during the growth process as a function of time: (1) self-seeding mechanism where one of two overlapping nanowires serves as a seed, while the other continues to grow as a wire and (2) self-assembly mechanism where an aggregate of small rods (< 50 nm in diameter) recrystallize on the tip of a longer wire, extending its length.« less

Ground Calibrations of the Clouds and the Earth's Radiant Energy System (CERES) Tropical Rainfall Measuring Mission Spacecraft Thermistor Bolometers

NASA Technical Reports Server (NTRS)

Lee, Robert B., III; Smith, G. Lou; Barkstrom, Bruce R.; Priestley, Kory J.; Thomas, Susan; Paden, Jack; Pandey, Direndra K.; Thornhill, K. Lee; Bolden, William C.; Wilson, Robert S.

1997-01-01

The Clouds and the Earth's Radiant Energy System (CERES) spacecraft scanning thermistor bolometers will measure earth-reflected solar and earth-emmitted,longwave radiances, at the top-of-the-atmosphere. The measurements are performed in the broadband shortwave (0.3-5.0 micron) and longwave (5.0 - >100 micron) spectral regions as well as in the 8 -12 micron water vapor window over geographical footprints as small as 10 kilometers at the nadir. The CERES measurements are designed to improve our knowledge of the earth's natural climate processes, in particular those related to clouds, and man's impact upon climate as indicated by atmospheric temperature. November 1997, the first set of CERES bolometers is scheduled for launch on the Tropical Rainfall Measuring Mission (TRMM) Spacecraft. The CERES bolometers were calibrated radiometrically in a vacuum ground facility using absolute reference sources, tied to the International Temperature Scale of 1990. Accurate bolometer calibrations are dependent upon the derivations of the radiances from the spectral properties [reflectance, transmittance, emittance, etc.] of both the sources and bolometers. In this paper, the overall calibration approaches are discussed for the longwave and shortwave calibrations. The spectral responses for the TRMM bolometer units are presented and applied to the bolometer ground calibrations in order to determine pre-launch calibration gains.

Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

DTIC Science & Technology

2010-05-01

samples were dipped in an aqueous solution of iodine (I) and potassium iodide (KI) (25 gm I and 100 gm KI per liter of water [H2O] ) (16). The samples...Satterfield, C. N.; Wentworth, R. L. in Hydrogen Peroxide , Reinhold Publishing, New York, 1955, p. 370. 12 19. Kishioka, K.; Horita, S.; Ohdaria, K...germanium H2O water HBT heterojunction bipolar transistor I iodine IPA isopropal alcohol KI potassium iodide MEE metal enhanced etching

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

PubMed

DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

2011-12-05

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haller, E.E.; Hubbard, G.S.; Hansen, W.L.

1976-09-01

A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/submore » 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).« less

Evaluation of Segmented Amorphous-Contact Planar Germanium Detectors for Heavy-Element Research

NASA Astrophysics Data System (ADS)

Jackson, Emily G.

The challenge of improving our understanding of the very heaviest nuclei is at the forefront of contemporary low-energy nuclear physics. In the last two decades, "in-beam" spectroscopy experiments have advanced from Z=98 to Z=104, Rutherfordium, allowing insights into the dynamics of the fission barrier, high-order deformations, and pairing correlations. However, new detector technologies are needed to advance to even heavier nuclei. This dissertation is aimed at evaluating one promising new technology; large segmented planar germanium wafers for this area of research. The current frontier in gamma-ray spectroscopy involves large-volume (>9 cm thick) coaxial detectors that are position sensitive and employ gamma-ray "tracking". In contrast, the detectors assessed in this dissertation are relatively thin (~1 cm) segmented planar wafers with amorphous-germanium strip contacts that can tolerate extremely high gamma-ray count rates, and can accommodate hostile neutron fluxes. They may be the only path to heavier "in-beam" spectroscopy with production rates below 1 nanobarn. The resiliency of these detectors against neutron-induced damage is examined. Two detectors were deliberately subjected to a non-uniform neutron fluence leading to considerable degradation of performance. The neutrons were produced using the 7Li(p, n)7Be reaction at the UMass Lowell Van-de-Graaff accelerator with a 3.7-MeV proton beam incident on a natural Li target. The energy of the neutrons emitted at zero degrees was 2.0 MeV, close to the mean energy of the fission neutron spectrum, and each detector was exposed to a fluence >3.6 x109 n/cm2. A 3-D software "trap-corrector" gain-matching algorithm considerably restored the overall performance. Other neutron damage mitigation tactics were explored including over biasing the detector and flooding the detector with a high gamma-ray count rate. Various annealing processes to remove neutron damage were investigated. An array of very large diameter

SiGe quantum wells for uncooled long wavelength infra-red radiation (LWIR) sensors

NASA Astrophysics Data System (ADS)

Wissmar, S. G. E.; Radamsson, H. H.; Yamamoto, Y.; Tillack, B.; Vieider, C.; Andersson, J. Y.

2008-03-01

We demonstrate a novel single-crystalline high-performance thermistor material based on SiGe quantum well heterostructures. The SiGe/Si quantum wells are grown epitaxially on standard Si [001] substrates. Holes are used as charge carriers utilizing the discontinuities in the valence band structure. By optimizing design parameters such as the barrier height (by variation of the germanium content) and the fermi level Ef (by variation of the quantum well width and doping level) of the material, the layer structure can be tailored. Then a very high temperature coefficient of resistivity (TCR) can be obtained which is superior to the previous reported conventional thin film materials such as vanadium oxide and amorphous silicon. In addition, the high quality crystalline material promises very low 1/f-noise characteristics promoting an outstanding signal to noise ratio as well as well defined and uniform material properties. High-resolution X-ray diffraction was applied to characterize the thickness and Ge content of QWs. The results show sharp oscillations indicating an almost ideal super lattice with negligible relaxation and low defect density. The impact of growth temperature on the thermistor material properties was characterized by analyzing how the resulting strain primarily affects the performance of the TCR and 1/f noise. Results illustrate a value of 3.3 %/K for TCR with a low 1/f noise.

Femtosecond tracking of carrier relaxation in germanium with extreme ultraviolet transient reflectivity

NASA Astrophysics Data System (ADS)

Kaplan, Christopher J.; Kraus, Peter M.; Ross, Andrew D.; Zürch, Michael; Cushing, Scott K.; Jager, Marieke F.; Chang, Hung-Tzu; Gullikson, Eric M.; Neumark, Daniel M.; Leone, Stephen R.

2018-05-01

Extreme ultraviolet (XUV) transient reflectivity around the germanium M4 ,5 edge (3 d core-level to valence transition) at 30 eV is advanced to obtain the transient dielectric function of crystalline germanium [100] on femtosecond to picosecond time scales following photoexcitation by broadband visible-to-infrared (VIS/NIR) pulses. By fitting the transient dielectric function, carrier-phonon induced relaxations are extracted for the excited carrier distribution. The measurements reveal a hot electron relaxation rate of 3.2 ±0.2 ps attributed to the X -L intervalley scattering and a hot hole relaxation rate of 600 ±300 fs ascribed to intravalley scattering within the heavy hole (HH) band, both in good agreement with previous work. An overall energy shift of the XUV dielectric function is assigned to a thermally induced band gap shrinkage by formation of acoustic phonons, which is observed to be on a timescale of 4-5 ps, in agreement with previously measured optical phonon lifetimes. The results reveal that the transient reflectivity signal at an angle of 66∘ with respect to the surface normal is dominated by changes to the real part of the dielectric function, due to the near critical angle of incidence of the experiment (66∘-70∘) for the range of XUV energies used. This work provides a methodology for interpreting XUV transient reflectivity near core-level transitions, and it demonstrates the power of the XUV spectral region for measuring ultrafast excitation dynamics in solids.

Secondary ion formation during electronic and nuclear sputtering of germanium

NASA Astrophysics Data System (ADS)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Arsenic, barium, germanium, tin, dimethylsulfide and nutrient biogeochemistry in Charlotte Harbor, Florida, a phosphorus-enriched estuary

NASA Astrophysics Data System (ADS)

Froelich, P. N.; Kaul, L. W.; Byrd, J. T.; Andreae, M. O.; Roe, K. K.

1985-03-01

Concentrations of dissolved nutrients (NO 3, PO 4, Si), germanium species, arsenic species, tin, barium, dimethylsulfide and related parameters were measured along the salinity gradient in Charlotte Harbor. Phosphate enrichment from the phosphate industry on the Peace River promotes a productive diatom bloom near the river mouth where NO 3 and Si are completely consumed. Inorganic germanium is completely depleted in this bloom by uptake into biogenic opal. The Ge/Si ratio taken up by diatoms is about 0·7 × 10 -6, the same as that provided by the river flux, confirming that siliceous organisms incorporate germanium as an accidental trace replacement for silica. Monomethylgermanium and dimethylgermanium concentrations are undetectable in the Peace River, and increase linearly with increasing salinity to the seawater end of the bay, suggesting that these organogermanium species behave conservatively in estuaries, and are neither produced nor consumed during estuarine biogenic opal formation or dissolution. Inorganic arsenic displays slight removal in the bloom. Monomethylarsenic is produced both in the bloom and in mid-estuary, while dimethylarsenic is conservative in the bloom but produced in mid-estuary. The total production of methylarsenicals within the bay approximately balances the removal of inorganic arsenic, suggesting that most biological arsenic uptake in the estuary is biomethylated and released to the water column. Dimethylsulfide increases with increasing salinity in the estuary and shows evidence of removal, probably both by degassing and by microbial consumption. An input of DMS is observed in the central estuary. The behavior of total dissolvable tin shows no biological activity in the bloom or in mid-estuary, but does display a low-salinity input signal that parallels dissolved organic material, perhaps suggesting an association between tin and DOM. Barium displays dramatic input behavior at mid-salinities, probably due to slow release from clays

A Compton scattering setup for pulse shape discrimination studies in germanium detectors.

PubMed

von Sturm, K; Belogurov, S; Brugnera, R; Garfagnini, A; Lippi, I; Modenese, L; Rosso, D; Turcato, M

2017-07-01

Pulse shape discrimination is an important handle to improve sensitivity in low background experiments. A dedicated setup was built to investigate the response of high-purity germanium detectors to single Compton scattered events. Using properly collimated γ-ray sources, it is possible to select events with known interaction location. The aim is to correlate the position dependent signal shape with geometrical and electrical properties of the detector. We report on design and performance of the setup with a first look on data. Copyright © 2017 Elsevier Ltd. All rights reserved.

Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys

DOE PAGES

Claudio, Tania; Stein, Niklas; Peterman, Nils; ...

2015-10-26

The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon- germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low- temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000C. A peak figure of merit zT = 0:88 at 900C is observed and comparatively insensitive to the aforementioned param-more » eter variations.« less

Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

NASA Technical Reports Server (NTRS)

Volz, M. P.; Szofran, F. R.; Cobb, S. D.; Schweizer, M.; Walker, J. S.

2005-01-01

A series of (100)-oriented gallium-doped germanium crystals has been grown by the vertical Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c)) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. Tm(sup c) decreases as the aspect ratio of the melt increases, and approaches the theoretical limit expected for an infinite cylinder. Intentional interface demarcations are introduced by pulsing the RMF on and off The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased.

Creating ligand-free silicon germanium alloy nanocrystal inks.

PubMed

Erogbogbo, Folarin; Liu, Tianhang; Ramadurai, Nithin; Tuccarione, Phillip; Lai, Larry; Swihart, Mark T; Prasad, Paras N

2011-10-25

Particle size is widely used to tune the electronic, optical, and catalytic properties of semiconductor nanocrystals. This contrasts with bulk semiconductors, where properties are tuned based on composition, either through doping or through band gap engineering of alloys. Ideally, one would like to control both size and composition of semiconductor nanocrystals. Here, we demonstrate production of silicon-germanium alloy nanoparticles by laser pyrolysis of silane and germane. We have used FTIR, TEM, XRD, EDX, SEM, and TOF-SIMS to conclusively determine their structure and composition. Moreover, we show that upon extended sonication in selected solvents, these bare nanocrystals can be stably dispersed without ligands, thereby providing the possibility of using them as an ink to make patterned films, free of organic surfactants, for device fabrication. The engineering of these SiGe alloy inks is an important step toward the low-cost fabrication of group IV nanocrystal optoelectronic, thermoelectric, and photovoltaic devices.

A first-principles core-level XPS study on the boron impurities in germanium crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

2013-12-04

We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

Ductile-regime turning of germanium and silicon

NASA Technical Reports Server (NTRS)

Blake, Peter N.; Scattergood, Ronald O.

1989-01-01

Single-point diamond turning of silicon and germanium was investigated in order to clarify the role of cutting depth in coaxing a ductile chip formation in normally brittle substances. Experiments based on the rapid withdrawal of the tool from the workpiece have shown that microfracture damage is a function of the effective depth of cut (as opposed to the nominal cutting depth). In essence, damage created by the leading edge of the tool is removed several revolutions later by lower sections of the tool edge, where the effective cutting depth is less. It appears that a truly ductile cutting response can be achieved only when the effective cutting depth, or critical chip thickness, is less than about 20 nm. Factors such as tool rake angle are significant in that they will affect the actual value of the critical chip thickness for transition from brittle to ductile response. It is concluded that the critical chip thickness is an excellent parameter for measuring the effects of machining conditions on the ductility of the cut and for designing tool-workpiece geometry in both turning and grinding.

High-Resolution Gamma-Ray Imaging Measurements Using Externally Segmented Germanium Detectors

NASA Technical Reports Server (NTRS)

Callas, J.; Mahoney, W.; Skelton, R.; Varnell, L.; Wheaton, W.

1994-01-01

Fully two-dimensional gamma-ray imaging with simultaneous high-resolution spectroscopy has been demonstrated using an externally segmented germanium sensor. The system employs a single high-purity coaxial detector with its outer electrode segmented into 5 distinct charge collection regions and a lead coded aperture with a uniformly redundant array (URA) pattern. A series of one-dimensional responses was collected around 511 keV while the system was rotated in steps through 180 degrees. A non-negative, linear least-squares algorithm was then employed to reconstruct a 2-dimensional image. Corrections for multiple scattering in the detector, and the finite distance of source and detector are made in the reconstruction process.

Assessment of Bioavailable Concentrations of Germanium and Rare Earth Elements in the Rhizosphere of White Lupin (Lupinus albus L.)

NASA Astrophysics Data System (ADS)

Wiche, Oliver; Fischer, Ronny; Moschner, Christin; Székely, Balázs

2015-04-01

Concentrations of Germanium (Ge) and Rare Earth Elements in soils are estimated at 1.5 mg kg -1 (Ge), 25 mg kg -1 (La) and 20 mg kg -1 (Nd), which are only roughly smaller than concentrations of Pb and Zn. Germanium and rare earth elements are thus not rare but widely dispersed in soils and therefore up to date, only a few minable deposits are available. An environmental friendly and cost-effective way for Ge and rare earth element production could be phytomining. However, the most challenging part of a phytomining of these elements is to increase bioavailable concentrations of the elements in soils. Recent studies show, that mixed cultures with white lupine or other species with a high potential to mobilize trace metals in their rhizosphere due to an acidification of the soil and release of organic acids in the root zone could be a promising tool for phytomining. Complexation of Ge and rare earth elements by organic acids might play a key role in controlling bioavailability to plants as re-adsorption on soil particles and precipitation is prevented and thus, concentrations in the root zone of white lupine increase. This may also allow the complexes to diffuse along a concentration gradient to the roots of mixed culture growing species leading to enhanced plant uptake. However, to optimize mixed cultures it would be interesting to know to which extend mobilization of trace metals is dependent from chemical speciation of elements in soil due to the interspecific interaction of roots. A method for the identification of complexes of germanium and rare earth elements with organic acids, predominantly citric acid in the rhizosphere of white lupine was developed and successfully tested. The method is based on coupling of liquid chromatography with ICP-MS using a zic-philic column (SeQuant). As a preliminary result, we were able to show that complexes of germanium with citric acid exist in the rhizosphere of white lupin, what may contribute to the bioavailability of this

Spin Qubits in Germanium Structures with Phononic Gap

NASA Technical Reports Server (NTRS)

Smelyanskiy, V. N.; Vasko, F. T.; Hafiychuk, V. V.; Dykman, M. I.; Petukhov, A. G.

2014-01-01

We propose qubits based on shallow donor electron spins in germanium structures with phononic gap. We consider a phononic crystal formed by periodic holes in Ge plate or a rigid cover / Ge layer / rigid substrate structure with gaps approximately a few GHz. The spin relaxation is suppressed dramatically, if the Zeeman frequency omegaZ is in the phononic gap, but an effective coupling between the spins of remote donors via exchange of virtual phonons remains essential. If omegaZ approaches to a gap edge in these structures, a long-range (limited by detuning of omegaZ) resonant exchange interaction takes place. We estimate that ratio of the exchange integral to the longitudinal relaxation rate exceeds 10(exp 5) and lateral scale of resonant exchange 0.1 mm. The exchange contribution can be verified under microwave pumping through oscillations of spin echo signal or through the differential absorption measurements. Efficient manipulation of spins due to the Rabi oscillations opens a new way for quantum information applications.

Development of a Germanium Small-Animal SPECT System

NASA Astrophysics Data System (ADS)

Johnson, Lindsay C.; Ovchinnikov, Oleg; Shokouhi, Sepideh; Peterson, Todd E.

2015-10-01

Advances in fabrication techniques, electronics, and mechanical cooling systems have given rise to germanium detectors suitable for biomedical imaging. We are developing a small-animal SPECT system that uses a double-sided Ge strip detector. The detector's excellent energy resolution may help to reduce scatter and simplify processing of multi-isotope imaging, while its ability to measure depth of interaction has the potential to mitigate parallax error in pinhole imaging. The detector's energy resolution is <; 1% FWHM at 140 keV and its spatial resolution is approximately 1.5 mm FWHM. The prototype system described has a single-pinhole collimator with a 1-mm diameter and a 70-degree opening angle with a focal length variable between 4.5 and 9 cm. Phantom images from the gantry-mounted system are presented, including the NEMA NU-2008 phantom and a hot-rod phantom. Additionally, the benefit of energy resolution is demonstrated by imaging a dual-isotope phantom with 99mTc and 123I without cross-talk correction.

Germanium Based Field-Effect Transistors: Challenges and Opportunities

PubMed Central

Goley, Patrick S.; Hudait, Mantu K.

2014-01-01

The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

NASA Astrophysics Data System (ADS)

Aydın, Güral; Usta, Metin; Oktay, Adem

2018-06-01

Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

NASA Astrophysics Data System (ADS)

Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

2018-01-01

Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ogawa, Shingo, E-mail: Shingo-Ogawa@trc.toray.co.jp; Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871; Asahara, Ryohei

2015-12-21

The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures withmore » the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.« less

Cationic aza-macrocyclic complexes of germanium(II) and silicon(IV).

PubMed

Everett, Matthew; Jolleys, Andrew; Levason, William; Light, Mark E; Pugh, David; Reid, Gillian

2015-12-28

[GeCl2(dioxane)] reacts with the neutral aza-macrocyclic ligands L, L = Me3tacn (1,4,7-trimethyl-1,4,7-triazacyclononane), Me4cyclen (1,4,7,10-tetramethyl-1,4,7,10-tetraazacyclododecane) or Me4cyclam (1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane) and two mol. equiv. of Me3SiO3SCF3 in thf solution to yield the unusual and hydrolytically very sensitive [Ge(L)][O3SCF3]2 as white solids in moderate yield. Using shorter reaction times [Ge(Me3tacn)]Cl2 and [Ge(Me3tacn)]Cl[O3SCF3] were also isolated; the preparation of [Ge(Me4cyclen)][GeCl3]2 is also described. The structures of the Me3tacn complexes show κ(3)-coordination of the macrocycle, with the anions interacting only weakly to produce very distorted five- or six-coordination at germanium. In contrast, the structure of [Ge(Me4cyclen)][O3SCF3]2 shows no anion interactions, and a distorted square planar geometry at germanium from coordination to the tetra-aza macrocycle. Crystal structures of the Si(iv) complexes, [SiCl3(Me3tacn)]Y (Y = O3SCF3, BAr(F); [B{3,5-(CF3)2C6H3}4]) and [SiHCl2(Me3tacn)][BAr(F)], obtained from reaction of SiCl4 or SiHCl3 with Me3tacn, followed by addition of either Me3SiO3SCF3 or Na[BAr(F)], contain distorted octahedral cations, with facialκ(3)-coordinated Me3tacn. The open-chain triamine, Me2NCH2CH2N(Me)CH2CH2NMe2 (pmdta), forms [SiCl3(pmdta)][BAr(F)] and [SiBr3(pmdta)][BAr(F)] under similar conditions, containing mer-octahedral cations.

Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

NASA Technical Reports Server (NTRS)

Volz, M. P.; Walker, J. S.; Schweizer, M.; Cobb, S. D.; Szofran, F. R.

2004-01-01

A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The experimental data indicate that Tm(sup c) increases as the aspect ratio of the melt decreases. Modeling calculations predicting Tm(sup c) as a function of aspect ratio are in reasonable agreement with the experimental data. The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.

Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

NASA Technical Reports Server (NTRS)

Volz, M. P.; Schweizer, M.; Cobb, S. D.; Walker, J. S.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

2002-01-01

A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). The RMF has a marked affect on the interface shape, changing it from concave to nearly flat. The onset of time-dependent flow instabilities occurs when the critical magnetic Taylor number is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The critical magnetic Taylor number is a sensitive function of the aspect ratio and, as the crystal grows under a constant applied magnetic field, the induced striations change from nonperiodic to periodic, undergo a period-doubling transition, and then cease to exist. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.

Method of manufacturing a niobium-aluminum-germanium superconductive material

DOEpatents

Wang, John L.; Pickus, Milton R.; Douglas, Kent E.

1980-01-01

A method for manufacturing flexible Nb.sub.3 (Al,Ge) multifilamentary superconductive material in which a sintered porous niobium compact is infiltrated with an aluminum-germanium alloy and thereafter deformed and heat treated in a series of steps at different successively higher temperatures preferably below 1000.degree. C. to produce filaments composed of Nb.sub.3 (Al,G3) within the compact. By avoiding temperatures in excess of 1000.degree. C. during the heat treatment, cladding material such as copper can be applied to facilitate a deformation step preceding the heat treatment and can remain in place through the heat treatment to also serve as a temperature stabilizer for supeconductive material produced. Further, these lower heat treatment temperatures favor formation of filaments with reduced grain size and, hence with more grain boundaries which in turn increase the current-carrying capacity of the superconductive material.

Ge14 Br8 (PEt3 )4 : A Subhalide Cluster of Germanium.

PubMed

Kunz, Tanja; Schrenk, Claudio; Schnepf, Andreas

2018-04-03

Heating a metastable solution of Ge I Br to room temperature led to the first structurally characterized metalloid subhalide cluster Ge 14 Br 8 (PEt 3 ) 4 (1). Furthermore 1 can be seen as the first isolated binary halide cluster on the way from Ge I Br to elemental germanium, giving insight into the complex reaction mechanism of its disproportionation reaction. Quantum chemical calculations further indicate that a classical bonding situation is realized within 1 and that the last step of the formation of 1 might include the trapping of GeBr 2 units. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

NASA Astrophysics Data System (ADS)

Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

2018-01-01

The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

Broadband telecom to mid-infrared supercontinuum generation in a dispersion-engineered silicon germanium waveguide.

PubMed

Ettabib, Mohamed A; Xu, Lin; Bogris, Adonis; Kapsalis, Alexandros; Belal, Mohammad; Lorent, Emerick; Labeye, Pierre; Nicoletti, Sergio; Hammani, Kamal; Syvridis, Dimitris; Shepherd, David P; Price, Jonathan H V; Richardson, David J; Petropoulos, Periklis

2015-09-01

We demonstrate broadband supercontinuum generation (SCG) in a dispersion-engineered silicon-germanium waveguide. The 3 cm long waveguide is pumped by femtosecond pulses at 2.4 μm, and the generated supercontinuum extends from 1.45 to 2.79 μm (at the -30  dB point). The broadening is mainly driven by the generation of a dispersive wave in the 1.5-1.8 μm region and soliton fission. The SCG was modeled numerically, and excellent agreement with the experimental results was obtained.

Electrodeposition of germanium from supercritical fluids.

PubMed

Ke, Jie; Bartlett, Philip N; Cook, David; Easun, Timothy L; George, Michael W; Levason, William; Reid, Gillian; Smith, David; Su, Wenta; Zhang, Wenjian

2012-01-28

Several Ge(II) and Ge(IV) compounds were investigated as possible reagents for the electrodeposition of Ge from liquid CH(3)CN and CH(2)F(2) and supercritical CO(2) containing as a co-solvent CH(3)CN (scCO(2)) and supercritical CH(2)F(2) (scCH(2)F(2)). For Ge(II) reagents the most promising results were obtained using [NBu(n)(4)][GeCl(3)]. However the reproducibility was poor and the reduction currents were significantly less than the estimated mass transport limited values. Deposition of Ge containing films was possible at high cathodic potential from [NBu(n)(4)][GeCl(3)] in liquid CH(3)CN and supercritical CO(2) containing CH(3)CN but in all cases they were heavily contaminated by C, O, F and Cl. Much more promising results were obtained using GeCl(4) in liquid CH(2)F(2) and supercritical CH(2)F(2). In this case the reduction currents were consistent with mass transport limited reduction and bulk electrodeposition produced amorphous films of Ge. Characterisation by XPS showed the presence of low levels of O, F and C, XPS confirmed the presence of Ge together with germanium oxides, and Raman spectroscopy showed that the as deposited amorphous Ge could be crystallised by the laser used in obtaining the Raman measurements.

High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

NASA Astrophysics Data System (ADS)

Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

2018-04-01

Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Wei; Li, Lingzi; Yeo, Yee-Chia, E-mail: yeo@ieee.org

This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal 〈100〉 azimuths aremore » formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to “cellular precipitation.” This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.« less

Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films

NASA Astrophysics Data System (ADS)

Murphy, N. R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, C. V.

2014-05-01

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50-1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Radiation damage of the HEAO C-1 germanium detectors

NASA Technical Reports Server (NTRS)

Mahoney, W. A.; Ling, J. C.; Jacobson, A. S.

1981-01-01

The effects of radiation damage from proton bombardment of the four HEAO C-1 high purity germanium detectors have been measured and compared to predictions. Because of the presence of numerous gamma-ray lines in the detector background spectra and because of the relatively long exposure time of the HEAO 3 satellite to cosmic-ray and trapped protons, it has been possible to measure both the energy and time dependence of radiation damage. After 100 d in orbit, each of the four detectors has been exposed to approximately 3 x 10 to the 7th protons/sq cm, and the average energy resolution at 1460 keV had degraded from 3.2 keV fwhm to 8.6 keV fwhm. The lines were all broadened to the low energy side although the line profile was different for each of the four detectors. The damage-related contribution to the degradation in energy resolution was found to be linear in energy and proton influence.

Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radek, M.; Bracht, H., E-mail: bracht@uni-muenster.de; Johnson, B. C.

2015-08-24

The atomic mixing of matrix atoms during solid-phase epitaxy (SPE) is studied by means of isotopically enriched germanium (Ge) multilayer structures that were amorphized by Ge ion implantation up to a depth of 1.5 μm. Recrystallization of the amorphous structure is performed at temperatures between 350 °C and 450 °C. Secondary-ion-mass-spectrometry is used to determine the concentration-depth profiles of the Ge isotope before and after SPE. An upper limit of 0.5 nm is deduced for the displacement length of the Ge matrix atoms by the SPE process. This small displacement length is consistent with theoretical models and atomistic simulations of SPE, indicating that themore » SPE mechanism consists of bond-switching with nearest-neighbours across the amorphous-crystalline (a/c) interface.« less

Crystal structures of Hsp104 N-terminal domains from Saccharomyces cerevisiae and Candida albicans suggest the mechanism for the function of Hsp104 in dissolving prions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Peng; Li, Jingzhi; Weaver, Clarissa

Hsp104 is a yeast member of the Hsp100 family which functions as a molecular chaperone to disaggregate misfolded polypeptides. To understand the mechanism by which the Hsp104 N-terminal domain (NTD) interacts with its peptide substrates, crystal structures of the Hsp104 NTDs fromSaccharomyces cerevisiae(ScHsp104NTD) andCandida albicans(CaHsp104NTD) have been determined at high resolution. The structures of ScHsp104NTD and CaHsp104NTD reveal that the yeast Hsp104 NTD may utilize a conserved putative peptide-binding groove to interact with misfolded polypeptides. In the crystal structures ScHsp104NTD forms a homodimer, while CaHsp104NTD exists as a monomer. The consecutive residues Gln105, Gln106 and Lys107, and Lys141 around themore » putative peptide-binding groove mediate the monomer–monomer interactions within the ScHsp104NTD homodimer. Dimer formation by ScHsp104NTD suggests that the Hsp104 NTD may specifically interact with polyQ regions of prion-prone proteins. The data may reveal the mechanism by which Hsp104 NTD functions to suppress and/or dissolve prions.« less

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

NASA Technical Reports Server (NTRS)

Bratt, P. R.; Lewis, N. N.; Long, L. E.

1978-01-01

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

Universal single point liquid level sensor

DOEpatents

Kronberg, J.W.

1992-10-27

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired. 1 figure.

Universal single point liquid level sensor

DOEpatents

Kronberg, James W.

1992-01-01

A liquid level detector comprises a thermistor and circuitry for determining electrically if the thermistor is wet or dry and additionally, and continuously, if the thermistor is open or shorted. The voltage across the thermistor is filtered to remove low frequency electrical noise, then compared with a reference low voltage to determine if shorted and to a transition voltage chosen to be between the thermistor's normal wet and dry voltages to determine if the thermistor is wet or dry. The voltage is also compared to the supply voltage using a CMOS gate circuit element to determine if the thermistor is open. The gate passes both faults on to an LED to signal that a fault condition exists or indicates by another LED the wet or dry condition of the thermistor. A pump may be activated through a relay if the thermistor tests wet or dry, as desired.

Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties

NASA Astrophysics Data System (ADS)

Sanchez Perez, Jose Roberto

Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant

Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

NASA Astrophysics Data System (ADS)

Bansal, Monika; Kaur, Harsupreet

2018-05-01

In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

Silicon-Germanium Films Grown on Sapphire for Ka-Band Communications Applications

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.

2004-01-01

NASA's vision in the space communications area is to develop a broadband data network in which there is a high degree of interconnectivity among the various satellite systems, ground stations, and wired systems. To accomplish this goal, we will need complex electronic circuits integrating analog and digital data handling at the Ka-band (26 to 40 GHz). The purpose of this project is to show the feasibility of a new technology for Ka-band communications applications, namely silicon germanium (SiGe) on sapphire. This new technology will have several advantages in comparison to the existing silicon-substrate- based circuits. The main advantages are extremely low parasitic reactances that enable much higher quality active and passive components, better device isolation, higher radiation tolerance, and the integration of digital and analog circuitry on a single chip.

Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

NASA Astrophysics Data System (ADS)

Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

2016-04-01

Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

Germanium Isotopes - the Global Budget and Paleoceanographic Potential

NASA Astrophysics Data System (ADS)

Baronas, J. J.; Hammond, D. E.; Rouxel, O. J.

2017-12-01

The distribution of element isotope ratios in rocks, sediments, rivers, and seawater can provide key insights about the operation and coupling of various biogeochemical cycles that are directly or indirectly responsible for the climate and habitability of the Earth surface environment. Germanium (Ge) is a trace element that shares many chemical similarities with silicon (Si), in addition to some siderophilic, chalcophilic, and organophilic properties. As a result, Ge stable isotope ratios (δ74Ge) and Ge/Si ratios can be used to trace various biogeochemical processes. These include silicate rock weathering, which modulates atmospheric pCO2 and supplies nutrients to ecosystems, biogenic silica formation, which is coupled to ocean productivity, and marine sediment diagenesis, which ultimately controls the removal of material from the Earth's surface. I will present an overview of my dissertation research concerning the global Ge isotope cycle, with insights into Ge isotope fractionation during secondary mineral precipitation during weathering on continents and during authigenesis in marine sediments. I will also discuss the potential for the δ74Ge sedimentary record to be used as a paleoceanographic proxy, given the constraints on the global Ge isotope budget.

Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO x films and multilayer Ge/SiO2 structures

NASA Astrophysics Data System (ADS)

Grachev, D. A.; Ershov, A. V.; Karabanova, I. A.; Pirogov, A. V.; Nezhdanov, A. V.; Mashin, A. I.; Pavlov, D. A.

2017-05-01

The GeO x films and multilayer nanoperiodic Ge/SiO2 structures containing germanium nanocrystals were prepared by physical vapor deposition in vacuum. The properties of the films and multilayer structures were controlled by varying the deposition temperature in the range of 35-590°C and the annealing temperature in the range of 400-1000°C. A comparative study of the optical and structural characteristics of the nanosystems was performed using the methods of Raman scattering spectroscopy, IR spectroscopy, photoluminescence, and electron microscopy, which demonstrated a qualitative similarity of the nanosystems. It was found that annealing at temperatures in the range of 600-800°C leads to the formation of germanium nanocrystals with a high density ( 1012 cm-2), whereas in the materials not subjected to annealing, their density did not exceed 1010 cm-2. The average size of the nanocrystals was found to be 5 ± 2 nm. For both nanosystems, three luminescence bands were observed at 1.2, 1.5-1.7, and 1.7-2.0 eV. It was assumed that the origin of these bands is associated with germanium nanocrystals, oxygen-deficient centers in GeOx, and defects at the Ge/dielectric interface, respectively.

The processing of enriched germanium for the Majorana   Demonstrator  and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

PubMed

Dong, Wei; Hirohata, Toru; Nakajima, Kazutoshi; Wang, Xiaoping

2013-11-04

Using finite-difference-time-domain simulation, we have studied the near-field effect of Germanium (Ge) subwavelength arrays designed in-plane with a normal incidence. Spectra of vertical electric field component normal to the surface show pronounced resonance peaks in an infrared range, which can be applied in a quantum well infrared photodetector. Unlike the near-field optics in metallic systems that are commonly related to surface plasmons, the intense vertical field along the surface of the Ge film can be interpreted as a combination of diffraction and waveguide theory. The existence of the enhanced field is confirmed by measuring the Fourier transform infrared spectra of fabricated samples. The positions of the resonant peaks obtained in experiment are in good agreement with our simulations.

Dot size effects of nanocrystalline germanium on charging dynamics of memory devices

PubMed Central

2013-01-01

The dot size of nanocrystalline germanium (NC Ge) which impacts on the charging dynamics of memory devices has been theoretically investigated. The calculations demonstrate that the charge stored in the NC Ge layer and the charging current at a given oxide voltage depend on the dot size especially on a few nanometers. They have also been found to obey the tendency of initial increase, then saturation, and lastly, decrease with increasing dot size at any given charging time, which is caused by a compromise between the effects of the lowest conduction states and the capacitance of NC Ge layer on the tunneling. The experimental data from literature have also been used to compare and validate the theoretical analysis. PMID:23305228

Laser-induced self-organization in silicon-germanium thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weizman, M.; Nickel, N. H.; Sieber, I.

We report on the formation of self-organized structures in thin films of silicon-germanium (Si{sub 1-x}Ge{sub x}) with 0.3

Properties of the exotic metastable ST12 germanium allotrope

PubMed Central

Zhao, Zhisheng; Zhang, Haidong; Kim, Duck Young; Hu, Wentao; Bullock, Emma S.; Strobel, Timothy A.

2017-01-01

The optical and electronic properties of semiconducting materials are of great importance to a vast range of contemporary technologies. Diamond-cubic germanium is a well-known semiconductor, although other ‘exotic' forms may possess distinct properties. In particular, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P43212) due to experimental limitations in sample preparation and varying theoretical predictions. Here we report clear experimental and theoretical evidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk samples. Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were verified using powder X-ray diffraction, transmission electron microscopy, Raman and wavelength/energy dispersive X-ray spectroscopy. Optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59 eV and a direct optical transition at 0.74 eV, which is in good agreement with electrical transport measurements and our first-principles calculations. PMID:28045027

Properties of the exotic metastable ST12 germanium allotrope

DOE PAGES

Zhao, Zhisheng; Zhang, Haidong; Kim, Duck Young; ...

2017-01-03

The optical and electronic properties of semiconducting materials are of great importance to a vast range of contemporary technologies. Diamond-cubic germanium is a well-known semiconductor, although other ‘exotic’ forms may possess distinct properties. In particular, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P4 32 12) due to experimental limitations in sample preparation and varying theoretical predictions. Here we report clear experimental and theoretical evidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk samples. Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were verifiedmore » using powder X-ray diffraction, transmission electron microscopy, Raman and wavelength/energy dispersive X-ray spectroscopy. Lastly, optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59 eV and a direct optical transition at 0.74 eV, which is in good agreement with electrical transport measurements and our first-principles calculations.« less

Ultra-Low Noise Germanium Neutrino Detection system (ULGeN).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabrera-Palmer, Belkis; Barton, Paul

Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detectormore » with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.« less

High-energy proton radiation damage of high-purity germanium detectors

NASA Technical Reports Server (NTRS)

Pehl, R. H.; Varnell, L. S.; Metzger, A. E.

1978-01-01

Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.

Inverting polar domains via electrical pulsing in metallic germanium telluride

PubMed Central

Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

2017-01-01

Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation experiment MA-060, section 5

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Witt, A. F.; Lichtensteiger, M.; Herman, C. J.

1982-01-01

The crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero g conditions were investigated. The germanium (doped with gallium) system was selected because it was extensively studied on Earth and because it lends itself to a very detailed macroscopic and microscopic characterization. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. On the basis of the results obtained to date, there is no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Optimal Cooling of High Purity Germanium Spectrometers for Missions to Planets and Moons

NASA Astrophysics Data System (ADS)

Chernenko, A.; Kostenko, V.; Konev, S.; Rybkin, B.; Paschin, A.; Prokopenko, I.

2004-04-01

Gamma-ray spectrometers based on high purity germanium (HPGe) detectors are ultimately sensitive instruments for composition studies of surfaces of planets and moons. However, they require deep cooling well below 120K for the entire duration of space mission, and this challenges the feasibility of such instruments in the era of small and cost-efficient missions. In this paper we summarise our experience in the field of the theoretical and experimental studies of optimal cryogenic cooling of gamma-ray spectrometers based on HPGe detectors in order to find out how efficient, light and compact these instruments could be, provided such technologies like cryogenic heat pipe diodes (HPDs), efficient thermal insulation and efficient miniature cryocoolers are used.

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeO x) Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, Neil R.; Grant, J. T.; Sun, L.

2014-03-18

Germanium oxide (GeO x) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O 2/(Ar + O 2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO 2 and then finally to GeO 2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeO x films grown were amorphous. The opticalmore » properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeO x films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO 2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO 2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeO x films is presented and discussed.« less

Chemical Functionalization of Germanium with Dextran Brushes for Immobilization of Proteins Revealed by Attenuated Total Reflection Fourier Transform Infrared Difference Spectroscopy.

PubMed

Schartner, Jonas; Hoeck, Nina; Güldenhaupt, Jörn; Mavarani, Laven; Nabers, Andreas; Gerwert, Klaus; Kötting, Carsten

2015-07-21

Protein immobilization studied by attenuated total reflection Fourier transform infrared (ATR-FT-IR) difference spectroscopy is an emerging field enabling the study of proteins at atomic detail. Gold or glass surfaces are frequently used for protein immobilization. Here, we present an alternative method for protein immobilization on germanium. Because of its high refractive index and broad spectral window germanium is the best material for ATR-FT-IR spectroscopy of thin layers. So far, this technique was mainly used for protein monolayers, which lead to a limited signal-to-noise ratio. Further, undesired protein-protein interactions can occur in a dense layer. Here, the germanium surface was functionalized with thiols and stepwise a dextran brush was generated. Each step was monitored by ATR-FT-IR spectroscopy. We compared a 70 kDa dextran with a 500 kDa dextran regarding the binding properties. All surfaces were characterized by atomic force microscopy, revealing thicknesses between 40 and 110 nm. To analyze the capability of our system we utilized N-Ras on mono-NTA (nitrilotriacetic acid) functionalized dextran, and the amount of immobilized Ras corresponded to several monolayers. The protein stability and loading capacity was further improved by means of tris-NTA for immobilization. Small-molecule-induced changes were revealed with an over 3 times higher signal-to-noise ratio compared to monolayers. This improvement may allow the observation of very small and so far hidden changes in proteins upon stimulus. Furthermore, we immobilized green fluorescent protein (GFP) and mCherry simultaneously enabling an analysis of the surface by fluorescence microscopy. The absence of a Förster resonance energy transfer (FRET) signal demonstrated a large protein-protein distance, indicating an even distribution of the protein within the dextran.

Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100).

PubMed

Collins, Gillian; Aureau, Damien; Holmes, Justin D; Etcheberry, Arnaud; O'Dwyer, Colm

2014-12-02

Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon-germanium nanowires

NASA Astrophysics Data System (ADS)

Merhej, M.; Honegger, T.; Bassani, F.; Baron, T.; Peyrade, D.; Drouin, D.; Salem, B.

2018-01-01

The assembly of semiconductor nanowires with nanoscale precision is crucial for their integration into functional systems. In this work, we propose a novel method to experimentally determine the real part of the Clausius-Mossotti factor (CMF) of silicon and silicon-germanium nanowires. The quantification of this CMF is measured with the nanowires velocities in a pure dielectrophoretic regime. This approach combined with a study on the connected nanowires alignment yield has led to a frequency of capture evaluation. In addition, we have also presented the morphology of nanowires assembly using dielectrophoresis for a wide frequency variation of AC electric fields.

Radiation-enhanced self- and boron diffusion in germanium

NASA Astrophysics Data System (ADS)

Schneider, S.; Bracht, H.; Klug, J. N.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted; Bougeard, D.; Haller, E. E.

2013-03-01

We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘C and 720 ∘C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain concentrations of Ge interstitials and B-interstitial pairs that deviate by several orders of magnitude from their thermal equilibrium values. The dominance of self-interstitial related defects under irradiation leads to an enhanced self- and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI that are compared with recent results of atomistic calculations. The behavior of self- and B diffusion in Ge under concurrent annealing and irradiation is strongly affected by the property of the Ge surface to hinder the annihilation of self-interstitials. The limited annihilation efficiency of the Ge surface can be caused by donor-type surface states favored under vacuum annealing, but the physical origin remains unsolved.

Etching of germanium-tin using ammonia peroxide mixture

NASA Astrophysics Data System (ADS)

Dong, Yuan; Ong, Bin Leong; Wang, Wei; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Liang, Gengchiau; Yeo, Yee-Chia

2015-12-01

The wet etching of germanium-tin (Ge1-xSnx) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge1-xSnx is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge1-xSnx surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge0.918Sn0.082 samples. Both root-mean-square roughness and undulation periods of the Ge1-xSnx surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge1-xSnx using APM and may be used for the fabrication of Ge1-xSnx-based electronic and photonic devices.

Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

NASA Astrophysics Data System (ADS)

Shaheed, M. Reaz

1995-01-01

Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown

Canister cryogenic system for cooling germanium semiconductor detectors in borehole and marine probes

USGS Publications Warehouse

Boynton, G.R.

1975-01-01

High resolution intrinsic and lithium-drifted germanium gamma-ray detectors operate at about 77-90 K. A cryostat for borehole and marine applications has been designed that makes use of prefrozen propane canisters. Uses of such canisters simplifies cryostat construction, and the rapid exchange of canisters greatly reduces the time required to restore the detector to full holding-time capability and enhances the safety of a field operation where high-intensity 252Cf or other isotopic sources are used. A holding time of 6 h at 86 K was achieved in the laboratory in a simulated borehole probe in which a canister 3.7 cm diameter by 57 cm long was used. Longer holding times can be achieved by larger volume canisters in marine probes. ?? 1975.

Temperature induced phonon behaviour in germanium selenide thin films probed by Raman spectroscopy

NASA Astrophysics Data System (ADS)

Taube, A.; Łapińska, A.; Judek, J.; Wochtman, N.; Zdrojek, M.

2016-08-01

Here we report a detailed study of temperature-dependent phonon properties of exfoliated germanium selenide thin films (several tens of nanometers thick) probed by Raman spectroscopy in the 70-350 K temperature range. The temperature-dependent behavior of the positions and widths of the Raman modes was nonlinear. We concluded that the observed effects arise from anharmonic phonon-phonon interactions and are explained by the phenomenon of optical phonon decay into acoustic phonons. At temperatures above 200 K, the position of the Raman modes tended to be linearly dependent, and the first order temperature coefficients χ were  -0.0277, -0.0197 and  -0.031 cm-1 K-1 for B 3g , A g(1) and A g(2) modes, respectively.

Thermal cycling properties of a lead-free positive temperature coefficient thermistor in the Ba0.97(Bi0.5Na0.5)0.03TiO3 system

NASA Astrophysics Data System (ADS)

Choi, Hyoung-Seuk; Choi, Soon-Mok; Choi, Duck-Kyun

2016-01-01

A Pb-free PTC (positive temperature coefficient thermistor) heater was developed in the Ba0.97(Bi0.5Na0.5)0.03TiO3 system especially for automotive part applications. The reliability was verified by using a thermal cycling test designed on the basis of the result from a quality function deployment (QFD) analysis. We compared the thermal cycling test results from the newly-developed Pb-free PTC heaters with the results from PTC heaters currently on the market, namely, PTC heaters containing Pb. Life prediction and stress-strength relationships were analyzed together with a thermal diffusivity evaluation. We discuss the potential failure mechanisms during the thermal cycling test, focusing on the fact that electrical degradation in PTC materials is closely related to mechanical degradation due to the internal stress in the materials that comes from repeated phase changes. Different grain size distributions on the sintered bulks were considered to a key factor for explaining the different results of the reliability tests between the new Pb-free PTC heaters developed in this study and the commercial PTC heaters containing Pb.

Laser-initiated explosive electron emission from flat germanium crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porshyn, V., E-mail: porshyn@uni-wuppertal.de; Mingels, S.; Lützenkirchen-Hecht, D.

2016-07-28

Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration t{sub laser} = 3.5 ns and photon energy hν = 0.54–5.90 eV) and under DC voltages <10{sup 4} V. Large bunch charges up to ∼1 μC were extracted from the cathodes for laser pulses >1 MW/cm{sup 2} corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hν-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out firstmore » direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ∼0.8 eV.« less

Solution synthesis of lead seeded germanium nanowires and branched nanowire networks and their application as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Flynn, Grace; Palaniappan, Kumaranand; Sheehan, Martin; Kennedy, Tadhg; Ryan, Kevin M.

2017-06-01

Herein, we report the high density growth of lead seeded germanium nanowires (NWs) and their development into branched nanowire networks suitable for application as lithium ion battery anodes. The synthesis of the NWs from lead seeds occurs simultaneously in both the liquid zone (solution-liquid-solid (SLS) growth) and solvent rich vapor zone (vapor-liquid-solid (VLS) growth) of a high boiling point solvent growth system. The reaction is sufficiently versatile to allow for the growth of NWs directly from either an evaporated catalyst layer or from pre-defined nanoparticle seeds and can be extended to allowing extensive branched nanowire formation in a secondary reaction where these seeds are coated onto existing wires. The NWs are characterized using TEM, SEM, XRD and DF-STEM. Electrochemical analysis was carried out on both the single crystal Pb-Ge NWs and the branched Pb-Ge NWs to assess their suitability for use as anodes in a Li-ion battery. Differential capacity plots show both the germanium wires and the lead seeds cycle lithium and contribute to the specific capacity that is approximately 900 mAh g-1 for the single crystal wires, rising to approximately 1100 mAh g-1 for the branched nanowire networks.

Segmentation and pulse shape discrimination techniques for rejecting background in germanium detectors

NASA Technical Reports Server (NTRS)

Roth, J.; Primbsch, J. H.; Lin, R. P.

1984-01-01

The possibility of rejecting the internal beta-decay background in coaxial germanium detectors by distinguishing between the multi-site energy losses characteristic of photons and the single-site energy losses of electrons in the range 0.2 - 2 MeV is examined. The photon transport was modeled with a Monte Carlo routine. Background rejection by both multiple segmentation and pulse shape discrimination techniques is investigated. The efficiency of a six 1 cm-thick segment coaxial detector operating in coincidence mode alone is compared to that of a two-segment (1 cm and 5 cm) detector employing both front-rear coincidence and PSD in the rear segment to isolate photon events. Both techniques can provide at least 95 percent rejection of single-site events while accepting at least 80 percent of the multi-site events above 500 keV.

One-pot size-controlled growth of graphene-encapsulated germanium nanocrystals

NASA Astrophysics Data System (ADS)

Lee, Jae-Hyun; Lee, Eun-Kyung; Kang, Seog-Gyun; Jung, Su-Ho; Son, Seok-Kyun; Nam, Woo Hyun; Kim, Tae-Hoon; Choi, Byong Lyong; Whang, Dongmok

2018-05-01

To realize graphene-encapsulated semiconductor nanocrystals (NCs), an additional graphene coating process, which causes shape destruction and chemical contamination, has so far been inevitable. We report herein one-pot growth of uniform graphene-germanium core-shell nanocrystals (Ge@G NCs) in gram scale by the addition of methane as a carbon source during the thermal pyrolysis of germane. The methane plays a critical role in the growth of the graphene shell, as well as in the determination of the nucleation density and diameter of the NCs, similar to a surfactant in the liquid-phase growth of monodisperse NCs. By adjusting the gas ratio of precursors, a mixture of germane and methane, we can control the size of the Ge@G NCs in the range of ∼5-180 nm. The Ge@G NCs were characterized by various microscopic and spectroscopic tools, which indicated that the Ge core is single crystalline, and is completely covered by the graphene shell. We further investigated the merits of the graphene shell, which can enhance the electrical conductivity of nanocrystalline materials.

Improved WIMP-search reach of the CDMS II germanium data

DOE PAGES

Agnese, R.

2015-10-12

CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c 2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10more » –44 and 1.18×10 –41 at 90% confidence for 60 and 8.6 GeV/c 2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c 2 WIMPs.« less

Improved WIMP-search reach of the CDMS II germanium data

DOE PAGES

Agnese, R.

2015-10-12

CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c 2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10more » –44 and 1.18×10 –41 at 90% confidence for 60 and 8.6 GeV/c 2 WIMPs, respectively. Furthermore, this improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c 2 WIMPs.« less

Spin-to-charge conversion for hot photoexcited electrons in germanium

NASA Astrophysics Data System (ADS)

Zucchetti, C.; Bottegoni, F.; Isella, G.; Finazzi, M.; Rortais, F.; Vergnaud, C.; Widiez, J.; Jamet, M.; Ciccacci, F.

2018-03-01

We investigate the spin-to-charge conversion in highly doped germanium as a function of the kinetic energy of the carriers. Spin-polarized electrons are optically generated in the Ge conduction band, and their kinetic energy is varied by changing the photon energy in the 0.7-2.2 eV range. The spin detection scheme relies on spin-dependent scattering inside Ge, which yields an inverse spin-Hall electromotive force. The detected signal shows a sign inversion for h ν ≈1 eV which can be related to an interplay between the spin relaxation of high-energy electrons photoexcited from the heavy-hole and light-hole bands and that of low-energy electrons promoted from the split-off band. The inferred spin-Hall angle increases by about 3 orders of magnitude within the analyzed photon energy range. Since, for increasing photon energies, the phonon contribution to spin scattering exceeds that of impurities, our result indicates that the spin-to-charge conversion mediated by phonons is much more efficient than the one mediated by impurities.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

NASA Astrophysics Data System (ADS)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

PubMed

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-02

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Periodic structures on germanium induced by high repetition rate femtosecond laser

NASA Astrophysics Data System (ADS)

Lin, Xiaoming; Li, Xiaohong; Zhang, Yanbin; Xie, Changxin; Liu, Kaijun; Zhou, Qiang

2018-05-01

Laser-induced periodic surface structures (LIPSS) are studied on germanium surface in air by the femtosecond pulsed laser with repetition frequency of 76 MHz and wavelength λ of 800 nm. Three types of LIPSS were found and they are low-spatial-frequency LIPSS (LSFL), high-spatial-frequency LIPSS (HSFL), and LSFL superimposed with HSFL. The period ΛLSFL of LSFL shrinks quickly from approximately 650 nm to 400 nm (∼λ/2) when lowering the scanning speed. Comparatively, the period ΛHSFL of HSFL keeps almost constant between 90 and 100 nm (∼λ/8) when the scanning speed and the laser pulse energy vary. LSFL and HSFL coexist when the laser pulse energy is around 3.3 nJ/pulse and the scanning speed ranges between 3 and 8 mm/s. The surface plasmon polariton waves make a contribution to the formation of LIPSS and the fourth harmonic generation (FHG) might be involved in the formation of HSFL.

Economic and medical benefits of ultrasound screenings for gallstone disease.

PubMed

Shen, Hung-Ju; Hsu, Chung-Te; Tung, Tao-Hsin

2015-03-21

To investigate whether screening for gallstone disease was economically feasible and clinically effective. This clinical study was initially conducted in 2002 in Taipei, Taiwan. The study cohort total included 2386 healthy adults who were voluntarily admitted to a regional teaching hospital for a physical check-up. Annual follow-up screening with ultrasound sonography for gallstone disease continued until December 31, 2007. A decision analysis using the Markov Decision Model was constructed to compare different screening regimes for gallstone disease. The economic evaluation included estimates of both the cost-effectiveness and cost-utility of screening for gallstone disease. Direct costs included the cost of screening, regular clinical fees, laparoscopic cholecystectomy, and hospitalization. Indirect costs represent the loss of productivity attributable to the patient's disease state, and were estimated using the gross domestic product for 2011 in Taiwan. Longer time intervals in screening for gallstone disease were associated with the reduced efficacy and utility of screening and with increased cost. The cost per life-year gained (average cost-effectiveness ratio) for annual screening, biennial screening, 3-year screening, 4-year screening, 5-year screening, and no-screening was new Taiwan dollars (NTD) 39076, NTD 58059, NTD 72168, NTD 104488, NTD 126941, and NTD 197473, respectively (P < 0.05). The cost per quality-adjusted life-year gained by annual screening was NTD 40725; biennial screening, NTD 64868; 3-year screening, NTD 84532; 4-year screening, NTD 110962; 5-year screening, NTD 142053; and for the control group, NTD 202979 (P < 0.05). The threshold values indicated that the ultrasound sonography screening programs were highly sensitive to screening costs in a plausible range. Routine screening regime for gallstone disease is both medically and economically valuable. Annual screening for gallstone disease should be recommended.

Spectral Characterizations of the Clouds and the Earth's Radiant Energy System (CERES) Thermistor Bolometers using Fourier Transform Spectrometer (FTS) Techniques

NASA Technical Reports Server (NTRS)

Thornhill, K. Lee; Bitting, Herbert; Lee, Robert B., III; Paden, Jack; Pandey, Dhirendra K.; Priestley, Kory J.; Thomas, Susan; Wilson, Robert S.

1998-01-01

Fourier Transform Spectrometer (FTS) techniques are being used to characterize the relative spectral response, or sensitivity, of scanning thermistor bolometers in the infrared (IR) region (2 - >= 100-micrometers). The bolometers are being used in the Clouds and the Earth's Radiant Energy System (CERES) program. The CERES measurements are designed to provide precise, long term monitoring of the Earth's atmospheric radiation energy budget. The CERES instrument houses three bolometric radiometers, a total wavelength (0.3- >= 150-micrometers) sensor, a shortwave (0.3-5-micrometers) sensor, and an atmospheric window (8-12-micrometers) sensor. Accurate spectral characterization is necessary for determining filtered radiances for longwave radiometric calibrations. The CERES bolometers spectral response's are measured in the TRW FTS Vacuum Chamber Facility (FTS - VCF), which uses a FTS as the source and a cavity pyroelectric trap detector as the reference. The CERES bolometers and the cavity detector are contained in a vacuum chamber, while the FTS source is housed in a GN2 purged chamber. Due to the thermal time constant of the CERES bolometers, the FTS must be operated in a step mode. Data are acquired in 6 IR spectral bands covering the entire longwave IR region. In this paper, the TRW spectral calibration facility design and data measurement techniques are described. Two approaches are presented which convert the total channel FTS data into the final CERES spectral characterizations, producing the same calibration coefficients (within 0.1 percent). The resulting spectral response curves are shown, along with error sources in the two procedures. Finally, the impact of each spectral response curve on CERES data validation will be examined through analysis of filtered radiance values from various typical scene types.

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

NASA Astrophysics Data System (ADS)

Maggioni, G.; Carturan, S.; Raniero, W.; Riccetto, S.; Sgarbossa, F.; Boldrini, V.; Milazzo, R.; Napoli, D. R.; Scarpa, D.; Andrighetto, A.; Napolitani, E.; De Salvador, D.

2018-03-01

A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin ( ≤ 100 nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.

2009-01-01

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Etching of germanium-tin using ammonia peroxide mixture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Yuan; Ong, Bin Leong; Wang, Wei

The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount ofmore » Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.« less

A segmented, enriched N-type germanium detector for neutrinoless double beta-decay experiments

NASA Astrophysics Data System (ADS)

Leviner, L. E.; Aalseth, C. E.; Ahmed, M. W.; Avignone, F. T.; Back, H. O.; Barabash, A. S.; Boswell, M.; De Braeckeleer, L.; Brudanin, V. B.; Chan, Y.-D.; Egorov, V. G.; Elliott, S. R.; Gehman, V. M.; Hossbach, T. W.; Kephart, J. D.; Kidd, M. F.; Konovalov, S. I.; Lesko, K. T.; Li, Jingyi; Mei, D.-M.; Mikhailov, S.; Miley, H.; Radford, D. C.; Reeves, J.; Sandukovsky, V. G.; Umatov, V. I.; Underwood, T. A.; Tornow, W.; Wu, Y. K.; Young, A. R.

2014-01-01

We present data characterizing the performance of the first segmented, N-type Ge detector, isotopically enriched to 85% 76Ge. This detector, based on the Ortec PT6×2 design and referred to as SEGA (Segmented, Enriched Germanium Assembly), was developed as a possible prototype for neutrinoless double beta-decay measurements by the MAJORANA collaboration. We present some of the general characteristics (including bias potential, efficiency, leakage current, and integral cross-talk) for this detector in its temporary cryostat. We also present an analysis of the resolution of the detector, and demonstrate that for all but two segments there is at least one channel that reaches the MAJORANA resolution goal below 4 keV FWHM at 2039 keV, and all channels are below 4.5 keV FWHM.

Thermoelectric Figure-of-Merit of Nanostructured Silicon with a Low Concentration of Germanium

NASA Astrophysics Data System (ADS)

Zhu, Gaohua; Lee, Hohyun; Lan, Yucheng; Wang, Xiaowei; Joshi, Giri; Wang, Dezhi; Yang, Jian; Dresselhaus, Mildred; Chen, Gang; Ren, Zhifeng

2009-03-01

The thermoelectric properties of nanostructured silicon (Si) with a low concentration of germanium (Ge) are investigated. A low concentration of Ge leads to a significant cost reduction of the final product since Ge is at least 100 times more expensive than Si. By using only 5 atomic % Ge (Si95Ge5), we have achieved a thermoelectric figure-of-merit (ZT) of 0.95, similar to the ZT in the large grained Si80Ge20 alloy that is three times more expensive, and is almost four times that of the large grained bulk Si. The enhancement in the thermoelectric ZT for the nanostructured Si95Ge5 is mostly due to the reduced thermal conductivity caused by phonon scattering at the increased grain boundaries and the Ge alloying effect.

Formation of various types of nanostructures on germanium surface by nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Mikolutskiy, S. I.; Khasaya, R. R.; Khomich, Yu V.; Yamshchikov, V. A.

2018-03-01

The paper describes the formation of micro- and nanostructures in different parts of irradiation zone on germanium surface by multiple action of nanosecond pulses of ArF-laser. It proposes a simple method using only one laser beam without any optional devices and masks for surface treatment. Hexa- and pentagonal cells with submicron dimensions along the surface were observed in peripheral zone of irradiation spot by atomic-force microscopy. Nanostructures in the form of bulbs with rounded peaks with lateral sizes of 40-120 nm were obtained in peripheral low-intensity region of the laser spot. Considering experimental data on material processing by nanosecond laser pulses, a classification of five main types of surface reliefs formed by nanosecond laser pulses with energy density near or slightly above ablation threshold was proposed.

MTHFD1 polymorphism as maternal risk for neural tube defects: a meta-analysis.

PubMed

Zheng, Jinyu; Lu, Xiaocheng; Liu, Hao; Zhao, Penglai; Li, Kai; Li, Lixin

2015-04-01

Recently, the association between methylenetetrahydrofolate dehydrogenase 1 (MTHFD1) G1958A polymorphism and neural tube defects (NTD) susceptibility has been widely investigated; however, the results remained inconclusive. Hence, we conducted a meta-analysis to evaluate the effect of MTHFD1 G1958A polymorphism on NTD. The relative literatures were identified by search of the electronic databases PubMed, MEDLINE, and EMBASE. The extracted data were statistically analyzed, and pooled odds ratios (ORs) with 95 % confidence intervals (CIs) were calculated to estimate the association strength using Stata version 11.0 software. Finally, ten studies met our inclusion criteria, including 2,132/4,082 in NTD infants and controls; 1,402/3,136 in mothers with NTD offspring and controls; and 993/2,879 in fathers with NTD offspring and controls. This meta-analysis showed that, compared with the mothers with GG genotype, the women with AA genotype had an increased risk of NTD in their offspring, with OR values and 95 % CI at 1.39 (1.16-1.68), p < 0.001. Interestingly, fathers with AG genotype had a significant decreased risk of NTD offspring (OR = 0.79, 95 % CI = 0.66-0.94, p = 0.009). However, there was no significant association between the MTHFD1 G1958A polymorphism in NTD patients and the risk of NTD. In conclusion, the present meta-analysis provided evidence of the association between maternal MTHFD1 G1958A polymorphism and NTD susceptibility.

Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

NASA Astrophysics Data System (ADS)

Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

2017-11-01

A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors

NASA Astrophysics Data System (ADS)

Suzuki, Toyoaki; Wada, Takehiko; Hirose, Kazuyuki; Makitsubo, Hironobu; Kaneda, Hidehiro

2012-08-01

We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low-resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95% within the wavelength range of 40-200 μm, while low-resistivity ( ˜5 Ω cm) and ohmic contact are ensured at 4 K. We demonstrate the applicability of the MBE technology in fabricating the far-IR transparent electrode satisfying the above requirements.

The N-terminal Domain Modulates α-Amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid (AMPA) Receptor Desensitization*

PubMed Central

Möykkynen, Tommi; Coleman, Sarah K.; Semenov, Artur; Keinänen, Kari

2014-01-01

AMPA receptors are tetrameric glutamate-gated ion channels that mediate fast synaptic neurotransmission in mammalian brain. Their subunits contain a two-lobed N-terminal domain (NTD) that comprises over 40% of the mature polypeptide. The NTD is not obligatory for the assembly of tetrameric receptors, and its functional role is still unclear. By analyzing full-length and NTD-deleted GluA1–4 AMPA receptors expressed in HEK 293 cells, we found that the removal of the NTD leads to a significant reduction in receptor transport to the plasma membrane, a higher steady state-to-peak current ratio of glutamate responses, and strongly increased sensitivity to glutamate toxicity in cell culture. Further analyses showed that NTD-deleted receptors display both a slower onset of desensitization and a faster recovery from desensitization of agonist responses. Our results indicate that the NTD promotes the biosynthetic maturation of AMPA receptors and, for membrane-expressed channels, enhances the stability of the desensitized state. Moreover, these findings suggest that interactions of the NTD with extracellular/synaptic ligands may be able to fine-tune AMPA receptor-mediated responses, in analogy with the allosteric regulatory role demonstrated for the NTD of NMDA receptors. PMID:24652293

Crystallization of silicon-germanium by aluminum-induced layer exchange

NASA Astrophysics Data System (ADS)

Isomura, Masao; Yajima, Masahiro; Nakamura, Isao

2018-02-01

We have studied the crystallization of amorphous silicon-germanium (a-SiGe) by aluminum (Al)-induced layer exchange (ALILE) with a starting structure of glass/Al/Al oxide/a-SiGe. We examined ALILE at 450 °C, which is slightly higher than the eutectic temperature of Ge and Al, in order to shorten the ALILE time. We successfully produced c-SiGe films oriented in the (111) direction for 16 h without significant alloying. The thickness of Al layers should be 2800 Å or more to complete the ALILE for the a-SiGe layers of 2000-2800 Å thickness. When the Al layer is as thick as the a-SiGe layer, almost uniform c-SiGe is formed on the glass substrate. On the other hand, the islands of c-SiGe are formed on the glass substrate when the Al layer is thicker than the a-SiGe layer. The islands become smaller with thicker Al layers because more excess Al remains between the SiGe islands. The results indicate that the configuration of c-SiGe can be altered from a uniform structure to island structures of various sizes by changing the ratio of a-SiGe thickness to Al thickness.

Thermal stability of simple tetragonal and hexagonal diamond germanium

DOE PAGES

Huston, Larissa Q.; Johnson, Brett C.; Haberl, Bianca; ...

2017-11-07

Here, exotic phases of germanium, that form under high pressure but persist under ambient conditions, are of technological interest due to their unique optical and electrical properties. The thermal evolution and stability of two of these exotic Ge phases, the simple tetragonal (st12) and hexagonal diamond (hd) phases, are investigated in detail. These metastable phases, formed by high pressure decompression in either a diamond anvil cell or by nanoindentation, are annealed at temperatures ranging from 280 to 320 °C for st12-Ge and 200 to 550 °C for hd-Ge. In both cases, the exotic phases originated from entirely pure Ge precursormore » materials. Raman microspectroscopy is used to monitor the phase changes ex situ following annealing. Our results show that hd-Ge synthesized via a pure form of a-Ge first undergoes a subtle change in structure and then an irreversible phase transformation to dc-Ge with an activation energy of (4.3 ± 0.2) eV at higher temperatures. St12-Ge was found to transform to dc-Ge with an activation energy of (1.44 ± 0.08) eV. Taken together with results from previous studies, this study allows for intriguing comparisons with silicon and suggests promising technological applications.« less

Thermal stability of simple tetragonal and hexagonal diamond germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huston, Larissa Q.; Johnson, Brett C.; Haberl, Bianca

Here, exotic phases of germanium, that form under high pressure but persist under ambient conditions, are of technological interest due to their unique optical and electrical properties. The thermal evolution and stability of two of these exotic Ge phases, the simple tetragonal (st12) and hexagonal diamond (hd) phases, are investigated in detail. These metastable phases, formed by high pressure decompression in either a diamond anvil cell or by nanoindentation, are annealed at temperatures ranging from 280 to 320 °C for st12-Ge and 200 to 550 °C for hd-Ge. In both cases, the exotic phases originated from entirely pure Ge precursormore » materials. Raman microspectroscopy is used to monitor the phase changes ex situ following annealing. Our results show that hd-Ge synthesized via a pure form of a-Ge first undergoes a subtle change in structure and then an irreversible phase transformation to dc-Ge with an activation energy of (4.3 ± 0.2) eV at higher temperatures. St12-Ge was found to transform to dc-Ge with an activation energy of (1.44 ± 0.08) eV. Taken together with results from previous studies, this study allows for intriguing comparisons with silicon and suggests promising technological applications.« less

Long-term evolution of a propagating non-transform offset on the Mid-Atlantic Ridge over the last 26 m.y.

NASA Astrophysics Data System (ADS)

Zheng, T.; Tucholke, B. E.; Lin, J.

2017-12-01

By making plate reconstructions from Chron 8n ( 26.54 Ma) to present and analyzing multibeam bathymetry, long-range HMR1 sidescan sonar images, residual mantle Bouguer gravity anomaly (RMBA) and gravity-derived crust thickness, we investigated the structure and evolution of a propagating non-transform discontinuity (NTD) and adjacent ridge segments that now intersect the Mid-Atlantic Ridge (MAR) axis at 25°37'N. The NTD has propagated consistently northward since Chron 8n at a rate of 4.76 km/m.y. Offset across the NTD since Chron 6an (22 Ma) has been right lateral and has ranged from 8-52 km. Key features are: 1) Inside-corner (IC) crust consistently has higher values of RMBA than the adjacent ridge segments, implying thinner crust. 2) IC crust typically exhibits elevated, irregular edifices. Slopes of the NTD walls are steeper at ICs than at outside corners (OCs). Steep (up to 40°), abrupt slopes are particularly pronounced at the IC on the north side of the NTD. 3) OC crust is deeper and normally exhibits long linear ridges that curve toward the MAR axis at the southern edge of the NTD but show little curvature at the northern edge. 4) Width of the NTD between its northern and southern walls (at mid-depth) has ranged from 2 to 22 km, averaging 15 km. 5) The NTD valley was intermittently crossed by individual ridges or blocks every 5-60 km (average 20 km) along the run of the NTD. The ridges curve along the transtensional plate boundary within the NTD but are often discontinuous. HMR1 data show lumpy small-scale topography and occasional volcanic cones on the ridges and blocks. Their intermittency indicates that melt intruded sporadically into the NTD. Propagation of the NTD occurred as the transtensional plate boundary within the NTD jumped northward from a volcanic ridge axis or block, apparently as magmatism waned. The jumps captured crust and transferred it to the east flank only within the NTD, not from the northern IC edifices. We propose two possible

Analysis of the X-ray emission spectra of copper, germanium and rubidium plasmas produced at the Phelix laser facility

NASA Astrophysics Data System (ADS)

Comet, M.; Pain, J.-C.; Gilleron, F.; Piron, R.; Denis-Petit, D.; Méot, V.; Gosselin, G.; Morel, P.; Hannachi, F.; Gobet, F.; Tarisien, M.; Versteegen, M.

2017-03-01

We present the analysis of X-ray emission spectra of copper, germanium and rubidium plasmas measured at the Phelix laser facility. The laser intensity was around 6×1014 W.cm-2. The analysis is based on the hypothesis of an homogeneous plasma in local thermodynamic equilibrium using an effective temperature. This temperature is deduced from hydrodynamic simulations and collisional-radiative computations. Spectra are then calculated using the LTE opacity codes OPAMCDF and SCO-RCG and compared to experimental data.

Determination of the Peltier Coefficient of Germanium in a Vertical Bridgeman-Stockbarger Furnace

NASA Technical Reports Server (NTRS)

Weigel, Michaela E. K.; Matthiesen, David H.

1997-01-01

The Peltier effect is the fundamental mechanism that makes interface demarcation through current pulsing possible. If a method for calculating the necessary current density for effective demarcation is to be developed, it will be necessary to know the value of the Peltier coefficient. This study determined experimentally the value of the Peltier coefficient for gallium-doped germanium by comparing the change in average growth rates between current-on and current-off periods. Current-on and current-off layer thickness measurements were made using differential interference contrast microscopy and atomic force microscopy. It was found that the Joule and Thomson effects could not be neglected. Peltier coefficients calculated from the experimental data with an analysis that accounts for Joule, Thomson, and Peltier effects yielded an average value for the Peltier coefficient of 0.076 +/- 0.015 V.

Synthesis of germanium nanocrystals in high temperature supercritical CO2

NASA Astrophysics Data System (ADS)

Lu, Xianmao; Korgel, Brian A.; Johnston, Keith P.

2005-07-01

Germanium nanocrystals were synthesized in supercritical (sc) CO2 by thermolysis of diphenylgermane (DPG) or tetraethylgermane (TEG) with octanol as a capping ligand at 500 °C and 27.6 MPa. The Ge nanocrystals were characterized with high resolution transmission electron microscopy (HRTEM), energy-dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD). On the basis of TEM, the mean diameters of the nanocrystals made from DPG and TEG were 10.1 and 5.6 nm, respectively. The synthesis in sc-CO2 produced much less organic contamination compared with similar reactions in organic supercritical fluids. When the same reaction of DPG with octanol was performed in the gas phase without CO2 present, bulk Ge crystals were formed instead of nanocrystals. Thus, the solvation of the hydrocarbon ligands by CO2 was sufficient to provide steric stabilization. The presence of steric stabilization in CO2 at a reduced temperature of 2.5, with a reduced solvent density of only 0.4, may be attributed to a reduction in the differences between ligand-ligand interactions and ligand-CO2 interactions relative to thermal energy.

Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

PubMed

Balram, Krishna C; Audet, Ross M; Miller, David A B

2013-04-22

We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

PREFACE: 2nd Workshop on Germanium Detectors and Technologies

NASA Astrophysics Data System (ADS)

Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

2015-05-01

The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

Rare earth substitutional impurities in germanium: A hybrid density functional theory study

NASA Astrophysics Data System (ADS)

Igumbor, E.; Omotoso, E.; Tunhuma, S. M.; Danga, H. T.; Meyer, W. E.

2017-10-01

The Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density functional theory has been used to model the electronic and structural properties of rare earth (RE) substitutional impurities in germanium (REGe) . The formation and charge state transition energies for the REGe (RE = Ce, Pr, Er and Eu) were calculated. The energy of formation for the neutral charge state of the REGe lies between -0.14 and 3.13 eV. The formation energy result shows that the Pr dopant in Ge (PrGe) has the lowest formation energy of -0.14 eV, and is most energetically favourable under equilibrium conditions. The REGe induced charge state transition levels within the band gap of Ge. Shallow acceptor levels were induced by both the Eu (EuGe) and Pr (PrGe) dopants in Ge. The CeGe and ErGe exhibited properties of negative-U ordering with effective-U values of -0.85 and -1.07 eV, respectively.

The large enriched germanium experiment for neutrinoless double beta decay (LEGEND)

NASA Astrophysics Data System (ADS)

Abgrall, N.; Abramov, A.; Abrosimov, N.; Abt, I.; Agostini, M.; Agartioglu, M.; Ajjaq, A.; Alvis, S. I.; Avignone, F. T.; Bai, X.; Balata, M.; Barabanov, I.; Barabash, A. S.; Barton, P. J.; Baudis, L.; Bezrukov, L.; Bode, T.; Bolozdynya, A.; Borowicz, D.; Boston, A.; Boston, H.; Boyd, S. T. P.; Breier, R.; Brudanin, V.; Brugnera, R.; Busch, M.; Buuck, M.; Caldwell, A.; Caldwell, T. S.; Camellato, T.; Carpenter, M.; Cattadori, C.; Cederkäll, J.; Chan, Y.-D.; Chen, S.; Chernogorov, A.; Christofferson, C. D.; Chu, P.-H.; Cooper, R. J.; Cuesta, C.; Demidova, E. V.; Deng, Z.; Deniz, M.; Detwiler, J. A.; Di Marco, N.; Domula, A.; Du, Q.; Efremenko, Yu.; Egorov, V.; Elliott, S. R.; Fields, D.; Fischer, F.; Galindo-Uribarri, A.; Gangapshev, A.; Garfagnini, A.; Gilliss, T.; Giordano, M.; Giovanetti, G. K.; Gold, M.; Golubev, P.; Gooch, C.; Grabmayr, P.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Gurentsov, V.; Gurov, Y.; Gusev, K.; Hakenmüeller, J.; Harkness-Brennan, L.; Harvey, Z. R.; Haufe, C. R.; Hauertmann, L.; Heglund, D.; Hehn, L.; Heinz, A.; Hiller, R.; Hinton, J.; Hodak, R.; Hofmann, W.; Howard, S.; Howe, M. A.; Hult, M.; Inzhechik, L. V.; Csáthy, J. Janicskó; Janssens, R.; Ješkovský, M.; Jochum, J.; Johansson, H. T.; Judson, D.; Junker, M.; Kaizer, J.; Kang, K.; Kazalov, V.; Kermadic, Y.; Kiessling, F.; Kirsch, A.; Kish, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Konovalov, S. I.; Kontul, I.; Kornoukhov, V. N.; Kraetzschmar, T.; Kröninger, K.; Kumar, A.; Kuzminov, V. V.; Lang, K.; Laubenstein, M.; Lazzaro, A.; Li, Y. L.; Li, Y.-Y.; Li, H. B.; Lin, S. T.; Lindner, M.; Lippi, I.; Liu, S. K.; Liu, X.; Liu, J.; Loomba, D.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Ma, H.; Majorovits, B.; Mamedov, F.; Martin, R. D.; Massarczyk, R.; Matthews, J. A. J.; McFadden, N.; Mei, D.-M.; Mei, H.; Meijer, S. J.; Mengoni, D.; Mertens, S.; Miller, W.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Myslik, J.; Nemchenok, I.; Nilsson, T.; Nolan, P.; O'Shaughnessy, C.; Othman, G.; Panas, K.; Pandola, L.; Papp, L.; Pelczar, K.; Peterson, D.; Pettus, W.; Poon, A. W. P.; Povinec, P. P.; Pullia, A.; Quintana, X. C.; Radford, D. C.; Rager, J.; Ransom, C.; Recchia, F.; Reine, A. L.; Riboldi, S.; Rielage, K.; Rozov, S.; Rouf, N. W.; Rukhadze, E.; Rumyantseva, N.; Saakyan, R.; Sala, E.; Salamida, F.; Sandukovsky, V.; Savard, G.; Schönert, S.; Schütz, A.-K.; Schulz, O.; Schuster, M.; Schwingenheuer, B.; Selivanenko, O.; Sevda, B.; Shanks, B.; Shevchik, E.; Shirchenko, M.; Simkovic, F.; Singh, L.; Singh, V.; Skorokhvatov, M.; Smolek, K.; Smolnikov, A.; Sonay, A.; Spavorova, M.; Stekl, I.; Stukov, D.; Tedeschi, D.; Thompson, J.; Van Wechel, T.; Varner, R. L.; Vasenko, A. A.; Vasilyev, S.; Veresnikova, A.; Vetter, K.; von Sturm, K.; Vorren, K.; Wagner, M.; Wang, G.-J.; Waters, D.; Wei, W.-Z.; Wester, T.; White, B. R.; Wiesinger, C.; Wilkerson, J. F.; Willers, M.; Wiseman, C.; Wojcik, M.; Wong, H. T.; Wyenberg, J.; Xu, W.; Yakushev, E.; Yang, G.; Yu, C.-H.; Yue, Q.; Yumatov, V.; Zeman, J.; Zeng, Z.; Zhitnikov, I.; Zhu, B.; Zinatulina, D.; Zschocke, A.; Zsigmond, A. J.; Zuber, K.; Zuzel, G.

2017-10-01

The observation of neutrinoless double-beta decay (0νββ) would show that lepton number is violated, reveal that neu-trinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely low backgrounds, at the level of ˜0.1 count /(FWHM.t.yr) in the region of the signal. The current generation 76Ge experiments GERDA and the Majorana Demonstrator, utilizing high purity Germanium detectors with an intrinsic energy resolution of 0.12%, have achieved the lowest backgrounds by over an order of magnitude in the 0νββ signal region of all 0νββ experiments. Building on this success, the LEGEND collaboration has been formed to pursue a tonne-scale 76Ge experiment. The collaboration aims to develop a phased 0νββ experimental program with discovery potential at a half-life approaching or at 1028 years, using existing resources as appropriate to expedite physics results.

Improving axion detection sensitivity in high purity germanium detector based experiments

NASA Astrophysics Data System (ADS)

Xu, Wenqin; Elliott, Steven

2015-04-01

Thanks to their excellent energy resolution and low energy threshold, high purity germanium (HPGe) crystals are widely used in low background experiments searching for neutrinoless double beta decay, e.g. the MAJORANA DEMONSTRATOR and the GERDA experiments, and low mass dark matter, e.g. the CDMS and the EDELWEISS experiments. A particularly interesting candidate for low mass dark matter is the axion, which arises from the Peccei-Quinn solution to the strong CP problem and has been searched for in many experiments. Due to axion-photon coupling, the postulated solar axions could coherently convert to photons via the Primakeoff effect in periodic crystal lattices, such as those found in HPGe crystals. The conversion rate depends on the angle between axions and crystal lattices, so the knowledge of HPGe crystal axis is important. In this talk, we will present our efforts to improve the HPGe experimental sensitivity to axions by considering the axis orientations in multiple HPGe crystals simultaneously. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Novel mid-infrared silicon/germanium detector concepts

NASA Astrophysics Data System (ADS)

Presting, Hartmut; Konle, Johannes; Hepp, Markus; Kibbel, Horst; Thonke, Klaus; Sauer, Rolf; Corbin, Elizabeth A.; Jaros, Milan

2000-10-01

Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures are grown by molecular beam epitaxy on double-sided polished (100)Si substrates for mid-IR (3 to 5 micrometers and 8 to 12 micrometers ) detection. The samples are characterized by secondary ion mass spectroscopy, x-ray diffraction, and absorption measurements. Single mesa detectors are fabricated as well as large-area focal plane arrays with 256 X 256 pixels using standard Si integrated processing techniques. The detectors, based on heterointernal photo-emission (HIP) of photogenerated holes from a heavily p-doped (p++ approximately 5 X 1020 cm-3) SiGe QW into an undoped silicon layer, operate at 77 K. Various novel designs of the SiGe HIP's such as Ge- and B-grading, double- and multi-wells, are realized; in addition, thin doping setback layers between the highly doped well and the undoped Si layer are introduced. The temperature dependence of dark currents and photocurrents are measured up to 225 K. In general, we observe broad photoresponse curves with peak external quantum efficiencies, up to (eta) ext approximately 0.5% at 77 K and 4(mu) , detectivities up to 8 X 1011 cm(root)Hz/W are obtained. We demonstrate that by varying the thickness, Ge content, and doping level of the single- and the multi-QWs of SiGe HIP detectors, the photoresponse peak and the cutoff of the spectrum can be tuned over a wide wavelength range. The epitaxial versatility of the Si/SiGe system enables a tailoring of the photoresponse spectrum which demonstrates the advantages of the SiGe system in comparison over commercially used silicide detectors.

Inositol for the prevention of neural tube defects: a pilot randomised controlled trial.

PubMed

Greene, Nicholas D E; Leung, Kit-Yi; Gay, Victoria; Burren, Katie; Mills, Kevin; Chitty, Lyn S; Copp, Andrew J

2016-03-28

Although peri-conceptional folic acid (FA) supplementation can prevent a proportion of neural tube defects (NTD), there is increasing evidence that many NTD are FA non-responsive. The vitamin-like molecule inositol may offer a novel approach to preventing FA-non-responsive NTD. Inositol prevented NTD in a genetic mouse model, and was well tolerated by women in a small study of NTD recurrence. In the present study, we report the Prevention of Neural Tube Defects by Inositol (PONTI) pilot study designed to gain further experience of inositol usage in human pregnancy as a preliminary trial to a future large-scale controlled trial to evaluate efficacy of inositol in NTD prevention. Study subjects were UK women with a previous NTD pregnancy who planned to become pregnant again. Of 117 women who made contact, ninety-nine proved eligible and forty-seven agreed to be randomised (double-blind) to peri-conceptional supplementation with inositol plus FA or placebo plus FA. In total, thirty-three randomised pregnancies produced one NTD recurrence in the placebo plus FA group (n 19) and no recurrences in the inositol plus FA group (n 14). Of fifty-two women who declined randomisation, the peri-conceptional supplementation regimen and outcomes of twenty-two further pregnancies were documented. Two NTD recurred, both in women who took only FA in their next pregnancy. No adverse pregnancy events were associated with inositol supplementation. The findings of the PONTI pilot study encourage a large-scale controlled trial of inositol for NTD prevention, but indicate the need for a careful study design in view of the unwillingness of many high-risk women to be randomised.

Ultra-Pure Water and Extremophilic Bacteria interactions with Germanium Surfaces

NASA Astrophysics Data System (ADS)

Sah, Vasu R.

Supported by a consortium of semiconductor industry sponsors, an international "TIE" project among 5 National Science Foundation (NSF) Industry/university Cooperative Research Centers discovered that a particular extremophilic microbe, Pseudomonas syzygii, persists in the UltraPure Water (UPW) supplies of chip fabrication facilities (FABs) and can bio-corrode germanium wafers to produce microbe-encased optically transparent crystals. Considered as potentially functional "biochips", this investigation explored mechanisms for the efficient and deliberate production of such microbe-germania adducts as a step toward later testing of their properties as sensors or switches in bioelectronic or biophotonic circuits. Recirculating UPW (Ultra-Pure Water) and other purified water, laminar-flow loops were developed across 50X20x1mm germanium (Ge) prisms, followed by subsequent examination of the prism surfaces using Multiple Attenuated Internal Reflection InfraRed (MAIR-IR) spectroscopy, Contact Potential measurements, Differential Interference Contrast Light Microscopy (DICLM), Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDS), and Electron Spectroscopy for Chemical Analysis (ESCA; XPS). P. syzygii cultures originally obtained from a working FAB at University of Arizona were successfully grown on R2A minimal nutrient media. They were found to be identical to the microbes in stored UPW from the same facility, such microbes routinely capable of nucleation and entrapment within GeO2 crystals on the Ge flow surfaces. Optimum flow rates and exposure times were 1 ml/minute (3.2 s-1 shear rate) for 4 days at room temperature, producing densest crystal arrays at the prism central zones 2-3 cm from the flow inlets. Other flow rates and exposure times have higher shear rate which induces a different nucleation mechanism and saturation of crystal formation. Nucleation events began with square and circular oxide deposits surrounding active attached bacteria

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

NASA Technical Reports Server (NTRS)

Barber, P. G.; Berry, R. F.; Debnam, W. J.; Fripp, A. L.; Woodell, G.; Simchick, R. T.

1995-01-01

Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates.

Four pi calibration and modeling of a bare germanium detector in a cylindrical field source

NASA Astrophysics Data System (ADS)

Dewberry, R. A.; Young, J. E.

2012-05-01

In this paper we describe a 4π cylindrical field acquisition configuration surrounding a bare (unshielded, uncollimated) high purity germanium detector. We perform an efficiency calibration with a flexible planar source and model the configuration in the 4π cylindrical field. We then use exact calculus to model the flux on the cylindrical sides and end faces of the detector. We demonstrate that the model accurately represents the experimental detection efficiency compared to that of a point source and to Monte Carlo N-particle (MCNP) calculations of the flux. The model sums over the entire source surface area and the entire detector surface area including both faces and the detector's cylindrical sides. Agreement between the model and both experiment and the MCNP calculation is within 8%.

Size Dependent Pore Formation in Germanium Nanowires Undergoing Reversible Delithiation Observed by In Situ TEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xiaotang; He, Yang; Mao, Scott X.

Germanium (Ge) nanowires coated with an amorphous silicon (Si) shell undergoing lithiation and delithiation were studied using in situ transmission electron microscopy (TEM). Delithiation creates pores in nanowires with diameters larger than ~25 nm, but not in smaller diameter nanowires. The formation of pores in Ge nanowires undergoing delithiation has been observed before in in situ TEM experiments, but there has been no indication that a critical diameter exists below which pores do not form. Pore formation occurs as a result of fast lithium diffusion compared to vacancy migration. We propose that a short diffusion path for vacancies to themore » nanowire surface plays a role in limiting pore formation even when lithium diffusion is fast.« less

Photo-induced persistent inversion of germanium in a 200-nm-deep surface region.

PubMed

Prokscha, T; Chow, K H; Stilp, E; Suter, A; Luetkens, H; Morenzoni, E; Nieuwenhuys, G J; Salman, Z; Scheuermann, R

2013-01-01

The controlled manipulation of the charge carrier concentration in nanometer thin layers is the basis of current semiconductor technology and of fundamental importance for device applications. Here we show that it is possible to induce a persistent inversion from n- to p-type in a 200-nm-thick surface layer of a germanium wafer by illumination with white and blue light. We induce the inversion with a half-life of ~12 hours at a temperature of 220 K which disappears above 280 K. The photo-induced inversion is absent for a sample with a 20-nm-thick gold capping layer providing a Schottky barrier at the interface. This indicates that charge accumulation at the surface is essential to explain the observed inversion. The contactless change of carrier concentration is potentially interesting for device applications in opto-electronics where the gate electrode and gate oxide could be replaced by the semiconductor surface.

Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits

NASA Astrophysics Data System (ADS)

Sutton, Akil K.

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.

Estimating the burden of neural tube defects in low– and middle–income countries

PubMed Central

Lo, Annie; Polšek, Dora; Sidhu, Simrita

2014-01-01

Background To provide an estimate for the burden of neural tube defects (NTD) in low– and middle–income countries (LMIC) and explore potential public health policies that may be implemented. Although effective interventions are available to prevent NTD, there is still considerable childhood morbidity and mortality present in LMIC. Methods A search of Medline, EMBASE, Global Health Library and PubMed identified 37 relevant studies that provided estimates of the burden of NTD in LMIC. Information on burden of total NTD and specific NTD types was separated according to the denominator into two groups: (i) estimates based on the number of live births only; and (ii) live births, stillbirths and terminations. The data was then extracted and analysed. Results The search retrieved NTD burden from 18 countries in 6 WHO regions. The overall burden calculated using the median from studies based on livebirths was 1.67/1000 (IQR = 0.98–3.49) for total NTD burden, 1.13/1000 (IQR = 0.75–1.73) for spina bifida, 0.25/1000 (IQR = 0.08–1.07) for anencephaly and 0.15/1000 (IQR = 0.08–0.23) for encephalocele. Corresponding estimates based on all pregnancies resulting in live births, still births and terminations were 2.55/1000 (IQR = 1.56–3.91) for total NTD burden, 1.04/1000 (IQR = 0.67–2.48) for spina bifida, 1.03/1000 (IQR = 0.67–1.60) for anencephaly and 0.21 (IQR = 0.16–0.28) for encephalocele. This translates into about 190 000neonates who are born each year with NTD in LMIC. Conclusion Limited available data on NTD in LMIC indicates the need for additional research that would improve the estimated burden of NTD and recommend suitable aid policies through maternal education on folic acid supplementation or food fortification. PMID:24976961

Performance of A Compact Multi-crystal High-purity Germanium Detector Array for Measuring Coincident Gamma-ray Emissions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, Chris; Daigle, Stephen; Buckner, Matt

2015-02-18

The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the 14N(p,γ) 15O* reaction for several transition energies at an effective center of mass energy of 163 keV. Owing to the segmented nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within the uncertainties with the past measurements. Details of the analysis and detector performance will be presented.

Adult population as potential reservoir of NTD infections in rural villages of Kwale district, Coastal Kenya: implications for preventive chemotherapy interventions policy

PubMed Central

2011-01-01

Background Neglected tropical diseases (NTDs) are major public health problems in developing countries where they contribute to suffering of populations living in poor settings. As part of a research project started in September 2009 in Kwale district, Coast Region, Kenya, a baseline cross-sectional survey was conducted in 5 rural villages to provide information on the status of NTDs, including urinary schistosomiasis, soil-transmitted helminthiasis (STH), and lymphatic filariasis. This paper presents the results of a parasitological investigation among adults in the study villages. Methods A total of 599 adults in the 5 study villages were tested for NTD infections in urine, stool and blood. The presence of Schistosoma haematobium infection was determined by the urine filtration method. The presence of STH in stool was determined by Kato-Katz method while filarial antigenaemia was determined using immunochromatographic (ICT) test. Results The study revealed high prevalence of hookworm (41.7%) and schistosomiasis (18.2%) infections among adults in the study villages. Of the 599 individuals examined, 50.1% had one or more helminthic infections. There was low level of polyparasitism with helminthic NTDs in the study population with 9.5% and 1.7% of the participants having two and three infections, respectively. Conclusions In the current study, hookworm and schistosomiasis infections were identified as important infections among adults living in areas of high endemicity for these infections. Thus, if this section of the population is left untreated it may remain an important potential reservoir and a source of re-infection for school-age children treated in school deworming programmes. Therefore, there is a need to design novel strategies for preventive chemotherapy interventions that could allow inclusion of adults in an effort to reduce force of infection in high endemic communities. PMID:21917166

Adult population as potential reservoir of NTD infections in rural villages of Kwale district, Coastal Kenya: implications for preventive chemotherapy interventions policy.

PubMed

Njenga, Sammy M; Mwandawiro, Charles S; Muniu, Erastus; Mwanje, Mariam T; Haji, Fatma M; Bockarie, Moses J

2011-09-14

Neglected tropical diseases (NTDs) are major public health problems in developing countries where they contribute to suffering of populations living in poor settings. As part of a research project started in September 2009 in Kwale district, Coast Region, Kenya, a baseline cross-sectional survey was conducted in 5 rural villages to provide information on the status of NTDs, including urinary schistosomiasis, soil-transmitted helminthiasis (STH), and lymphatic filariasis. This paper presents the results of a parasitological investigation among adults in the study villages. A total of 599 adults in the 5 study villages were tested for NTD infections in urine, stool and blood. The presence of Schistosoma haematobium infection was determined by the urine filtration method. The presence of STH in stool was determined by Kato-Katz method while filarial antigenaemia was determined using immunochromatographic (ICT) test. The study revealed high prevalence of hookworm (41.7%) and schistosomiasis (18.2%) infections among adults in the study villages. Of the 599 individuals examined, 50.1% had one or more helminthic infections. There was low level of polyparasitism with helminthic NTDs in the study population with 9.5% and 1.7% of the participants having two and three infections, respectively. In the current study, hookworm and schistosomiasis infections were identified as important infections among adults living in areas of high endemicity for these infections. Thus, if this section of the population is left untreated it may remain an important potential reservoir and a source of re-infection for school-age children treated in school deworming programmes. Therefore, there is a need to design novel strategies for preventive chemotherapy interventions that could allow inclusion of adults in an effort to reduce force of infection in high endemic communities.

First results of neutrinoless double beta decay search with the GERmanium Detector Array "GERDA"

NASA Astrophysics Data System (ADS)

Janicskó Csáthy, József

2014-06-01

The study of neutrinoless double beta decay is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of the lepton number violating neutrinoless double beta decay would establish the Majorana nature of the neutrino. Until now neutrinoless double beta decay was not observed. The GERmanium Detector Array, GERDA is a double beta decay experiment located at the INFN Gran Sasso National Laboratory, Italy. GERDA operates bare Ge diodes enriched in 76Ge in liquid argon supplemented by a water shield. The exposure accumulated adds up to 21.6 kg· yr with a background level of 1.8 · 10-2 cts/(keV·kg·yr). The results of the Phase I of the experiment are presented and the preparation of the Phase II is briefly discussed.

5 MeV Proton irradiation effects on 200 GHz silicon-germanium heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Gnana Prakash, A. P.; Hegde, Vinayakprasanna N.; Pradeep, T. M.; Pushpa, N.; Bajpai, P. K.; Patel, S. P.; Trivedi, Tarkeshwar; Cressler, J. D.

2017-12-01

The total dose effects of 5 MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100 Mrad on advanced 200 GHz Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study was conducted to understand the energy loss of 5 MeV proton ions in SiGe HBT structure. Pre- and post-radiation DC figure of merits such as forward- and inverse-mode Gummel characteristics, excess base current, DC current gain and output characteristics were used to quantify the radiation tolerance of the devices. The results show that the proton creates a significant amount of damages in the surface and bulk of the transistor when compared with gamma irradiation. The SiGe HBTs shows robust ionizing radiation tolerance even up to a total dose of 100 Mrad for both radiations.

Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide.

PubMed

Sekiguchi, Shigeaki; Kurahashi, Teruo; Zhu, Lei; Kawaguchi, Kenichi; Morito, Ken

2012-04-09

We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.

Compression of hyper-spectral images using an accelerated nonnegative tensor decomposition

NASA Astrophysics Data System (ADS)

Li, Jin; Liu, Zilong

2017-12-01

Nonnegative tensor Tucker decomposition (NTD) in a transform domain (e.g., 2D-DWT, etc) has been used in the compression of hyper-spectral images because it can remove redundancies between spectrum bands and also exploit spatial correlations of each band. However, the use of a NTD has a very high computational cost. In this paper, we propose a low complexity NTD-based compression method of hyper-spectral images. This method is based on a pair-wise multilevel grouping approach for the NTD to overcome its high computational cost. The proposed method has a low complexity under a slight decrease of the coding performance compared to conventional NTD. We experimentally confirm this method, which indicates that this method has the less processing time and keeps a better coding performance than the case that the NTD is not used. The proposed approach has a potential application in the loss compression of hyper-spectral or multi-spectral images

Convection currents in a water calorimeter.

PubMed

Schulz, R J; Weinhous, M S

1985-10-01

A flexible, temperature-regulated water calorimeter has been constructed containing two pairs of thermistor sensors at depths of 6.23 and 10.0 cm. It may be irradiated by vertical or horizontal beams, and operated at temperatures in the range from 3 to 40 degrees C. When irradiated at 30 degrees C with a vertically downward 19 MeV electron beam, the responses of the proximal and midline thermistors were in accordance with the depth-dose curve. When irradiated horizontally, the initial patterns of temperature rise were the same, but after about 30 s (4 Gy) the rate of temperature rise decreased at the proximal thermistors and increased at the midline thermistors. Shortly after irradiation, the temperature curve and increased at the midline thermistors. Shortly after irradiation, the temperature curve of the midline thermistors crossed that for the proximal thermistors, a pattern that suggested the presence of convection currents. To test this hypothesis, the calorimeter was operated at 4 degrees C. The temperature patterns for horizontal irradiation became the same as those obtained with vertical beams, thus demonstrating the production of convection currents in water at a temperature of 30 degrees C for temperature gradients as small as 10(-3) degrees C cm-1.

Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires

PubMed Central

Lee, Woo-Jung; Ma, Jin Won; Bae, Jung Min; Jeong, Kwang-Sik; Cho, Mann-Ho; Kang, Chul; Wi, Jung-Sub

2013-01-01

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have focused only on direct bandgap materials. This paper reports the first observation of strongly enhanced THz emission from Germanium nanowires (Ge NWs). The origin of THz generation from Ge NWs can be interpreted using two terms: high photoexcited electron-hole carriers (Δn) and strong built-in electric field (Eb) at the wire surface based on the relation . The first is related to the extensive surface area needed to trigger an irradiated photon due to high aspect ratio. The second corresponds to the variation of Fermi-level determined by confined surface charges. Moreover, the carrier dynamics of optically excited electrons and holes give rise to phonon emission according to the THz region. PMID:23760467

Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

DOE PAGES

Crouse, Dustin; Simon, John; Schulte, Kevin L.; ...

2018-01-31

Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorousmore » concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.« less

Increased fracture depth range in controlled spalling of (100)-oriented germanium via electroplating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crouse, Dustin; Simon, John; Schulte, Kevin L.

Controlled spalling in (100)-oriented germanium using a nickel stressor layer shows promise for semiconductor device exfoliation and kerfless wafering. Demonstrated spall depths of 7-60 um using DC sputtering to deposit the stressor layer are appropriate for the latter application but spall depths < 5 um may be required to minimize waste for device applications. This work investigates the effect of tuning both electroplating current density and electrolyte chemistry on the residual stress in the nickel and on the achievable spall depth range for the Ni/Ge system as a lower-cost, higher-throughput alternative to sputtering. By tuning current density and electrolyte phosphorousmore » concentration, it is shown that electroplating can successfully span the same range of spalled thicknesses as has previously been demonstrated by sputtering and can reach sufficiently high stresses to enter a regime of thickness (<7 um) appropriate to minimize substrate consumption for device applications.« less

Composite germanium monochromators - Results for the TriCS single-crystal diffractometer at SINQ

NASA Astrophysics Data System (ADS)

Schefer, J.; Fischer, S.; Böhm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P.

Composite germanium monochromators are foremost in application in neutron diffraction due to their good scattering properties, low absorption values and the diamond structure which avoids second-order contamination when using hhk reflections (all odd). Our slices for the monochromator are built from 24 wafers, each 0.4 mm thick. The alignment of the wafers within the final composite wafer package has been improved by adding tin for the soldering process with a sputtering method instead of foils. Nine slices, each 12.5 mm high, are mounted on separate miniature goniometer heads to the focusing monochromator. The focusing angle is controlled by only one motor/digitizer by using a sophisticated mechanism. Turning the monochromator by 9° around overlineω allow access of the 311 (primary) and 511 (secondary) reflection. We also show the importance of permanent quality control with neutrons. The monochromator will be used on the single-crystal diffractometer TriCS at SINQ.

Non-local opto-electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Jamet, Matthieu; Rortais, Fabien; Zucchetti, Carlo; Ghirardini, Lavinia; Ferrari, Alberto; Vergnaud, Celine; Widiez, Julie; Marty, Alain; Attane, Jean-Philippe; Jaffres, Henri; George, Jean-Marie; Celebrano, Michele; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco; Bottegoni, Federico

Non-local charge carriers injection/detection schemes lie at the foundation of information manipulation in integrated systems. The next generation electronics may operate on the spin instead of the charge and germanium appears as the best hosting material to develop such spintronics for its compatibility with mainstream silicon technology and long spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin orientation. In this presentation, we demonstrate injection of pure spin currents in Ge, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, by using lithographed nanostructures to diffuse the light and create an in-plane polarized electron spin population. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect across a Pt stripe. Supported by the ANR project SiGeSPIN #ANR-13-BS10-0002 and the CARIPLO project SEARCH-IV (Grant 2013-0623).

Phase diagram of germanium telluride encapsulated in carbon nanotubes from first-principles searches

NASA Astrophysics Data System (ADS)

Wynn, Jamie M.; Medeiros, Paulo V. C.; Vasylenko, Andrij; Sloan, Jeremy; Quigley, David; Morris, Andrew J.

2017-12-01

Germanium telluride has attracted great research interest, primarily because of its phase-change properties. We have developed a general scheme, based on the ab initio random structure searching (AIRSS) method, for predicting the structures of encapsulated nanowires, and using this we predict a number of thermodynamically stable structures of GeTe nanowires encapsulated inside carbon nanotubes of radii under 9 Å . We construct the phase diagram of encapsulated GeTe, which provides quantitative predictions about the energetic favorability of different filling structures as a function of the nanotube radius, such as the formation of a quasi-one-dimensional rock-salt-like phase inside nanotubes of radii between 5.4 and 7.9 Å . Simulated TEM images of our structures show excellent agreement between our results and experimental TEM imagery. We show that, for some nanotubes, the nanowires undergo temperature-induced phase transitions from one crystalline structure to another due to vibrational contributions to the free energy, which is a first step toward nano-phase-change memory devices.

Formation of nanotwin networks during high-temperature crystallization of amorphous germanium

DOE PAGES

Sandoval, Luis; Reina, Celia; Marian, Jaime

2015-11-26

Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei at high temperatures. We find that crystallization occurs by the recurrent transfer of atoms via a diffusive process from the amorphous phase into suitably-oriented crystalline layers. We accompany our simulations with a comprehensive thermodynamic and kinetic analysis of the growth process, which explains the energy balance and the interfacial growth velocities governing grain growth. For the <111> crystallographic orientation, we find a degenerate atomic rearrangement process, withmore » two zero-energy modes corresponding to a perfect crystalline structure and the formation of a Σ3 twin boundary. Continued growth in this direction results in the development a twin network, in contrast with all other growth orientations, where the crystal grows defect-free. This particular mechanism of crystallization from amorphous phases is also observed during solid-phase epitaxial growth of <111> semiconductor crystals, where growth is restrained to one dimension. Lastly, we calculate the equivalent X-ray diffraction pattern of the obtained nanotwin networks, providing grounds for experimental validation.« less

Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium

PubMed Central

Sandoval, Luis; Reina, Celia; Marian, Jaime

2015-01-01

Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei at high temperatures. We find that crystallization occurs by the recurrent transfer of atoms via a diffusive process from the amorphous phase into suitably-oriented crystalline layers. We accompany our simulations with a comprehensive thermodynamic and kinetic analysis of the growth process, which explains the energy balance and the interfacial growth velocities governing grain growth. For the 〈111〉 crystallographic orientation, we find a degenerate atomic rearrangement process, with two zero-energy modes corresponding to a perfect crystalline structure and the formation of a Σ3 twin boundary. Continued growth in this direction results in the development a twin network, in contrast with all other growth orientations, where the crystal grows defect-free. This particular mechanism of crystallization from amorphous phases is also observed during solid-phase epitaxial growth of 〈111〉 semiconductor crystals, where growth is restrained to one dimension. We calculate the equivalent X-ray diffraction pattern of the obtained nanotwin networks, providing grounds for experimental validation. PMID:26607496

Synthesis, surface properties and antimicrobial activity of some germanium nonionic surfactants.

PubMed

Zaki, Mohamed F; Tawfik, Salah M

2014-01-01

Esterification reaction between different fatty acid namely; lauric, stearic, oleic and linoleic acids and polyethylene glycol-400 were performed. The produced polyethylene glycol ester were reacted with p-amine benzoic acid followed by condensation reaction with germanium dioxide in presence of sodium carbonate to form desired germinate surfactants. The chemical structures of the synthesized surfactants were determined using different spectra tools. The surface parameter including: the critical micelle concentration (CMC), effectiveness (π(cmc)), efficiency (Pc20), maximum surface excess (Γ(max)) and minimum surface area (A(min)), were calculated from the surface tension measurements. The synthesized surfactants showed higher surface activity. The thermodynamic parameters showed that adsorption and micellization processes are spontaneous. It is clear that the synthesized nonionic surfactants showed their tendency towards adsorption at the interfaces and also micellization in the bulk of their solutions. The synthesized surfactants were tested against different strain of bacteria using inhibition zone diameters. The synthesized surfactants showed good antimicrobial activities against the tested microorganisms including Gram positive, Gram negative as well as fungi. The promising inhibition efficiency of these compounds against the sulfate reducing bacteria facilitates them to be applicable as new categories of sulfate reducing bacteria biocides.

[Clinical epidemiological study of neural tube defects classified according to the five sites of closure].

PubMed

Sanchis Calvo, A; Martínez- Frías, M

2001-02-01

To identify the frequency at birth of neural tube defects (NTD) in the Spanish population. NTDs were considered as a whole as well as according to the different sites of closure failure, following the theory of multisite closure of the neural tube. To analyze the epidemiological characteristics of the different sites. Data derived from the Spanish Collaborative Study of Congenital Malformations (ECEMC), from April 1976 to March 1995. Among the 1,222,698 live births during this period, 784 infants had NTD were controlled. Among these, 784 infants had NTD. The prevalence of NTD in our population was 1.01 per 1,000 births, a frequency which is considered medium-to low. Only 5.74% of the NTD were of known etiology: 2.17% were genic, 1.27% were chromosomic and 2.29% were environmental. Excluding NTD of genetic etiology, whether genic or chromosomic, most of the remaining were isolated defects (multifactorial) and 16.78% multiple malformations. Site 1, where the closure of the neural tube starts, represented 24% of all the affected sites. However, more than 50% of the NTDs corresponded to closure failure at the junction of two sites. As in other populations with a low prevalence of NTD at birth, the prevalence of these defects in our population showed a trend to decrease with time, due to the possibility of interrupting gestation after prenatal diagnosis. All the NTD could be classified according to the theory of multisite closure of the neural tube, including 13 cases with several noncontiguous affected sites. Two types of NTD were observed: in the first, closure failed to occur and in the second, two closures failed to meet.

Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

NASA Astrophysics Data System (ADS)

Barba, D.; Wang, C.; Nélis, A.; Terwagne, G.; Rosei, F.

2018-04-01

We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.

Germanium Does Not Substitute for Boron in Cross-Linking of Rhamnogalacturonan II in Pumpkin Cell Walls1

PubMed Central

Ishii, Tadashi; Matsunaga, Toshiro; Iwai, Hiroaki; Satoh, Shinobu; Taoshita, Junji

2002-01-01

Boron (B)-deficient pumpkin (Cucurbita moschata Duchesne) plants exhibit reduced growth, and their tissues are brittle. The leaf cell walls of these plants contain less than one-half the amount of borate cross-linked rhamnogalacturonan II (RG-II) dimer than normal plants. Supplying germanium (Ge), which has been reported to substitute for B, to B-deficient plants does not restore growth or reduce tissue brittleness. Nevertheless, the leaf cell walls of the Ge-treated plants accumulated considerable amounts of Ge. Dimeric RG-II (dRG-II) accounted for between 20% and 35% of the total RG-II in the cell walls of the second to fourth leaves from Ge-treated plants, but only 2% to 7% of the RG-II was cross-linked by germanate (dRG-II-Ge). The ability of RG-II to form a dimer is not reduced by Ge treatment because approximately 95% of the monomeric RG-II generated from the walls of Ge-treated plants is converted to dRG-II-Ge in vitro in the presence of germanium oxide and lead acetate. However, dRG-II-Ge is unstable and is converted to monomeric RG-II when the Ge is removed. Therefore, the content of dRG-II-Ge and dRG-II-B described above may not reflect the actual ratio of these in muro. 10B-Enriched boric acid and Ge are incorporated into the cell wall within 10 min after their foliar application to B-deficient plants. Foliar application of 10B but not Ge results in an increase in the proportion of dRG-II in the leaf cell wall. Taken together, our results suggest that Ge does not restore the growth of B-deficient plants. PMID:12481079

Synthesis and the crystal and molecular structure of the germanium(IV) complex with propylene-1,3-diaminetetraacetic acid [Ge(Pdta)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sergienko, V. S., E-mail: sergienko@igic.ras.ru; Martsinko, E. E.; Seifullina, I. I.

2015-09-15

The germanium(IV) complex with propylene-1,3-diaminetetraacetic acid (H{sub 4}Pdta) is studied by elemental analysis, X-ray diffraction, thermogravimetry, and IR spectroscopy. The X-ray diffraction study reveals two crystallographically independent [Ge(Pdta)] molecules of similar structure. Both Ge atoms are octahedrally coordinated by four O atoms and two N atoms (at the cis positions) of the hexadentate pentachelate Pdta{sup 4–} ligand. An extended system of weak C—H···O hydrogen bonds connects complex molecules into a supramolecular 3D framework.

Synthesis and the crystal and molecular structure of the germanium(IV) complex with propylene-1,3-diaminetetraacetic acid [Ge( Pdta)

NASA Astrophysics Data System (ADS)

Sergienko, V. S.; Martsinko, E. E.; Seifullina, I. I.; Churakov, A. V.; Chebanenko, E. A.

2015-09-01

The germanium(IV) complex with propylene-1,3-diaminetetraacetic acid (H4 Pdta) is studied by elemental analysis, X-ray diffraction, thermogravimetry, and IR spectroscopy. The X-ray diffraction study reveals two crystallographically independent [Ge( Pdta)] molecules of similar structure. Both Ge atoms are octahedrally coordinated by four O atoms and two N atoms (at the cis positions) of the hexadentate pentachelate Pdta 4- ligand. An extended system of weak С—Н···О hydrogen bonds connects complex molecules into a supramolecular 3D framework.

Neglected tropical disease and emerging infectious disease: an analysis of the history, promise and constraints of two worldviews.

PubMed

Jackson, Yves; Stephenson, Niamh

2014-01-01

Emerging infectious diseases (EIDs) and neglected tropical diseases (NTDs) are medical terms referring to a group of diseases, yet they are simultaneously socio-political constructs (EID and NTD). When viewed as such, public health interest in EID has been criticised as prioritising free market, Global North interests. This paper asks if the recent turn to NTD, which directs attention and resources to 'the bottom billion' of the world's population, addresses the limitations of focusing on EID. Our approach involves comparing the specific socio-political framing, or 'worldview' of NTD, with that of EID. We examine the distinct history, rationales, morals, political and economic tensions and loci of power entailed in each worldview. This analysis suggests that efforts to foreground NTD constitute a site where humanitarian and biomedical industry actors and actions are increasingly blurred. We examine whether the NTD worldview constitutes a break with or a new version of a free market approach to global health, and whether it reworks or solidifies paternalistic Global North-South relations. We consider some of the limits of work on NTD to date, suggesting that although the NTD worldview does not escape the neo-colonial history of global health, it can actualise it under a different form.

Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy.

PubMed

Vakarin, Vladyslav; Ramírez, Joan Manel; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Liu, Qiankun; Bouville, David; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

2017-09-01

This Letter explores the use of Ge-rich Si 0.2 Ge 0.8 waveguides on graded Si 1-x Ge x substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated, and characterized broadband Mach-Zehnder interferometers fully covering a range of 3 μm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10 dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si 1-x Ge x waveguides with high germanium concentration.

Ab initio structure prediction of silicon and germanium sulfides for lithium-ion battery materials

NASA Astrophysics Data System (ADS)

Hsueh, Connie; Mayo, Martin; Morris, Andrew J.

Conventional experimental-based approaches to materials discovery, which can rely heavily on trial and error, are time-intensive and costly. We discuss approaches to coupling experimental and computational techniques in order to systematize, automate, and accelerate the process of materials discovery, which is of particular relevance to developing new battery materials. We use the ab initio random structure searching (AIRSS) method to conduct a systematic investigation of Si-S and Ge-S binary compounds in order to search for novel materials for lithium-ion battery (LIB) anodes. AIRSS is a high-throughput, density functional theory-based approach to structure prediction which has been successful at predicting the structures of LIBs containing sulfur and silicon and germanium. We propose a lithiation mechanism for Li-GeS2 anodes as well as report new, theoretically stable, layered and porous structures in the Si-S and Ge-S systems that pique experimental interest.

Canada's neglected tropical disease research network: who's in the core-who's on the periphery?

PubMed

Phillips, Kaye; Kohler, Jillian Clare; Pennefather, Peter; Thorsteinsdottir, Halla; Wong, Joseph

2013-01-01

This study designed and applied accessible yet systematic methods to generate baseline information about the patterns and structure of Canada's neglected tropical disease (NTD) research network; a network that, until recently, was formed and functioned on the periphery of strategic Canadian research funding. MULTIPLE METHODS WERE USED TO CONDUCT THIS STUDY, INCLUDING: (1) a systematic bibliometric procedure to capture archival NTD publications and co-authorship data; (2) a country-level "core-periphery" network analysis to measure and map the structure of Canada's NTD co-authorship network including its size, density, cliques, and centralization; and (3) a statistical analysis to test the correlation between the position of countries in Canada's NTD network ("k-core measure") and the quantity and quality of research produced. Over the past sixty years (1950-2010), Canadian researchers have contributed to 1,079 NTD publications, specializing in Leishmania, African sleeping sickness, and leprosy. Of this work, 70% of all first authors and co-authors (n = 4,145) have been Canadian. Since the 1990s, however, a network of international co-authorship activity has been emerging, with representation of researchers from 62 different countries; largely researchers from OECD countries (e.g. United States and United Kingdom) and some non-OECD countries (e.g. Brazil and Iran). Canada has a core-periphery NTD international research structure, with a densely connected group of OECD countries and some African nations, such as Uganda and Kenya. Sitting predominantly on the periphery of this research network is a cluster of 16 non-OECD nations that fall within the lowest GDP percentile of the network. The publication specialties, composition, and position of NTD researchers within Canada's NTD country network provide evidence that while Canadian researchers currently remain the overall gatekeepers of the NTD research they generate; there is opportunity to leverage existing

Canada's Neglected Tropical Disease Research Network: Who's in the Core—Who's on the Periphery?

PubMed Central

Phillips, Kaye; Kohler, Jillian Clare; Pennefather, Peter; Thorsteinsdottir, Halla; Wong, Joseph

2013-01-01

Background This study designed and applied accessible yet systematic methods to generate baseline information about the patterns and structure of Canada's neglected tropical disease (NTD) research network; a network that, until recently, was formed and functioned on the periphery of strategic Canadian research funding. Methodology Multiple methods were used to conduct this study, including: (1) a systematic bibliometric procedure to capture archival NTD publications and co-authorship data; (2) a country-level “core-periphery” network analysis to measure and map the structure of Canada's NTD co-authorship network including its size, density, cliques, and centralization; and (3) a statistical analysis to test the correlation between the position of countries in Canada's NTD network (“k-core measure”) and the quantity and quality of research produced. Principal Findings Over the past sixty years (1950–2010), Canadian researchers have contributed to 1,079 NTD publications, specializing in Leishmania, African sleeping sickness, and leprosy. Of this work, 70% of all first authors and co-authors (n = 4,145) have been Canadian. Since the 1990s, however, a network of international co-authorship activity has been emerging, with representation of researchers from 62 different countries; largely researchers from OECD countries (e.g. United States and United Kingdom) and some non-OECD countries (e.g. Brazil and Iran). Canada has a core-periphery NTD international research structure, with a densely connected group of OECD countries and some African nations, such as Uganda and Kenya. Sitting predominantly on the periphery of this research network is a cluster of 16 non-OECD nations that fall within the lowest GDP percentile of the network. Conclusion/Significance The publication specialties, composition, and position of NTD researchers within Canada's NTD country network provide evidence that while Canadian researchers currently remain the overall gatekeepers of the

Search of low-mass WIMPs with a p -type point contact germanium detector in the CDEX-1 experiment

NASA Astrophysics Data System (ADS)

Zhao, W.; Yue, Q.; Kang, K. J.; Cheng, J. P.; Li, Y. J.; Wong, H. T.; Lin, S. T.; Chang, J. P.; Chen, J. H.; Chen, Q. H.; Chen, Y. H.; Deng, Z.; Du, Q.; Gong, H.; Hao, X. Q.; He, H. J.; He, Q. J.; Huang, H. X.; Huang, T. R.; Jiang, H.; Li, H. B.; Li, J.; Li, J.; Li, J. M.; Li, X.; Li, X. Y.; Li, Y. L.; Lin, F. K.; Liu, S. K.; Lü, L. C.; Ma, H.; Ma, J. L.; Mao, S. J.; Qin, J. Q.; Ren, J.; Ren, J.; Ruan, X. C.; Sharma, V.; Shen, M. B.; Singh, L.; Singh, M. K.; Soma, A. K.; Su, J.; Tang, C. J.; Wang, J. M.; Wang, L.; Wang, Q.; Wu, S. Y.; Wu, Y. C.; Xianyu, Z. Z.; Xiao, R. Q.; Xing, H. Y.; Xu, F. Z.; Xu, Y.; Xu, X. J.; Xue, T.; Yang, L. T.; Yang, S. W.; Yi, N.; Yu, C. X.; Yu, H.; Yu, X. Z.; Zeng, M.; Zeng, X. H.; Zeng, Z.; Zhang, L.; Zhang, Y. H.; Zhao, M. G.; Zhou, Z. Y.; Zhu, J. J.; Zhu, W. B.; Zhu, X. Z.; Zhu, Z. H.; CDEX Collaboration

2016-05-01

The CDEX-1 experiment conducted a search of low-mass (<10 GeV /c2 ) weakly interacting massive particles dark matter at the China Jinping Underground Laboratory using a p-type point-contact germanium detector with a fiducial mass of 915 g at a physics analysis threshold of 475 eVee. We report the hardware setup, detector characterization, data acquisition, and analysis procedures of this experiment. No excess of unidentified events is observed after the subtraction of the known background. Using 335.6 kg-days of data, exclusion constraints on the weakly interacting massive particle-nucleon spin-independent and spin-dependent couplings are derived.

Optimization of chemical and instrumental parameters in hydride generation laser-induced breakdown spectrometry for the determination of arsenic, antimony, lead and germanium in aqueous samples.

PubMed

Yeşiller, Semira Unal; Yalçın, Serife

2013-04-03

A laser induced breakdown spectrometry hyphenated with on-line continuous flow hydride generation sample introduction system, HG-LIBS, has been used for the determination of arsenic, antimony, lead and germanium in aqueous environments. Optimum chemical and instrumental parameters governing chemical hydride generation, laser plasma formation and detection were investigated for each element under argon and nitrogen atmosphere. Arsenic, antimony and germanium have presented strong enhancement in signal strength under argon atmosphere while lead has shown no sensitivity to ambient gas type. Detection limits of 1.1 mg L(-1), 1.0 mg L(-1), 1.3 mg L(-1) and 0.2 mg L(-1) were obtained for As, Sb, Pb and Ge, respectively. Up to 77 times enhancement in detection limit of Pb were obtained, compared to the result obtained from the direct analysis of liquids by LIBS. Applicability of the technique to real water samples was tested through spiking experiments and recoveries higher than 80% were obtained. Results demonstrate that, HG-LIBS approach is suitable for quantitative analysis of toxic elements and sufficiently fast for real time continuous monitoring in aqueous environments. Copyright © 2013 Elsevier B.V. All rights reserved.

High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

NASA Astrophysics Data System (ADS)

Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

2015-06-01

Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation <4% in the electrical resistance of batches of ten pellets of both types was indicative of high reproducibility. A silver-paste-based brazing technique was used to assemble the TE elements into modules. This assembly technique afforded low and repeatable electrical contact resistance (<3 nΩ m2). A test bench was developed for measuring the performance of TE modules at high temperatures (up to 600°C), and thirty 20 mm × 20 mm TE modules were produced and tested. The results revealed the performance was reproducible, with power output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature

[Prevention of neural tube defects. An important health and social problem].

PubMed

Czochańska, J; Lech, M

1998-01-01

Central neural system congenital malformations in the form of neural tube defects (ntd) belong to the most common diseases leading to very serious childrens' disability and mortality. As it has been calculated, the number of children affected with ntd, delivered in Poland every year is in the range of 800-1150. Children with encephalocele participate in this number in app. 50%. As it has been found, morbidity and mortality caused by the ntd remain high and stable in Poland for the last 20 years. In the view of very limited possibilities of the treatment offered by health services, prophylactic measures remain the best methods for limitation of the problem. The primary prevention of ntd was discovered in late seventies. It has been found that folic acid added to the diet of women in the reproductive age reduced number of children born with ntd by 70%. Authors present the Programme of Primary Prevention of ntd in Poland. This Programme has been incorporated in the National Programme of Health for the Nation 1996-2005.

An experimental study of antireflective coatings in Ge light detectors for scintillating bolometers

NASA Astrophysics Data System (ADS)

Mancuso, M.; Beeman, J. W.; Giuliani, A.; Dumoulin, L.; Olivieri, E.; Pessina, G.; Plantevin, O.; Rusconi, C.; Tenconi, M.

2014-01-01

Luminescent bolometers are double-readout devices able to measure simultaneously the phonon and the light yields after a particle interaction in the detector. This operation allows in some cases to tag the type of the interacting quantum, crucial issue for background control in rare event experiments such as the search for neutrinoless double beta decay and for interactions of particle dark matter candidates. The light detectors used in the LUCIFER and LUMINEU searches (projects aiming at the study of the double beta interesting candidates 82Se and 100Mo using ZnSe and ZnMoO4 scintillating bolometers) consist of hyper-pure Ge thin slabs equipped with NTD thermistors. A substantial sensitivity improvement of the Ge light detectors can be obtained applying a proper anti-reflective coatings on the Ge side exposed to the luminescent bolometer. The present paper deals with the investigation of this aspect, proving and quantifying the positive effect of a SiO2 and a SiO coating and setting the experimental bases for future tests of other coating materials. The results confirm that an appropriate coating procedure helps in improving the sensitivity of bolometric light detectors by an important factor (in the range 20% - 35%) and needs to be included in the recipe for the development of an optimized radio-pure scintillating bolometer.

[Radioactive cesium analysis in radiation-tainted beef by gamma-ray spectrometry with germanium semiconductor detector].

PubMed

Minatani, Tomiaki; Nagai, Hiroyuki; Nakamura, Masashi; Otsuka, Kimihito; Sakai, Yoshimichi

2012-01-01

The detection limit and precision of radioactive cesium measurement in beef by gamma-ray spectrometry with a germanium semiconductor detector were evaluated. Measurement for 2,000 seconds using a U-8 container (100 mL) provided a detection limit of radioactive cesium (the sum of 134Cs and 137Cs) of around 20 Bq/kg. The 99% confidence interval of the measurement of provisional maximum residue limit level (491 Bq/kg) samples ranged from 447 to 535 Bq/kg. Beef is heterogeneous, containing muscle and complex fat layers. Depending on the sampled parts, the measurement value is variable. It was found that radioactive cesium content of the muscle layer was clearly different from that of fat, and slight differences were observed among parts of the sample (SD=16.9 Bq/kg), even though the same region (neck block) of beef sample was analyzed.

Neural tube defects in Latin America and the impact of fortification: a literature review

PubMed Central

Rosenthal, Jorge; Casas, Jessica; Taren, Douglas; Alverson, Clinton J; Flores, Alina; Frias, Jaime

2015-01-01

Objective Data on the prevalence of birth defects and neural tube defects (NTD) in Latin America are limited. The present review summarizes NTD prevalence and time trends in Latin American countries and compares pre- and post-fortification periods to assess the impact of folic acid fortification in these countries. Design We carried out a literature review of studies and institutional reports published between 1990 and 2010 that contained information on NTD prevalence in Latin America. Results NTD prevalence in Latin American countries varied from 0.2 to 9.6 per 1000 live births and was influenced by methods of ascertainment. Time trends from Bogota, Costa Rica, Dominican Republic, Guatemala City, México and Puerto Rico showed average annual declines of 2.5% to 21.8%. Pre- and post-fortification comparisons were available for Argentina, Brazil, Chile, Costa Rica, Puerto Rico and México. The aggregate percentage decline in NTD prevalence ranged from 33% to 59%. Conclusions The present publication is the first to review data on time trends and the impact of folic acid fortification on NTD prevalence in Latin America. Reported NTD prevalence varied markedly by geographic region and in some areas of Latin America was among the lowest in the world, while in other areas it was among the highest. For countries with available information, time trends showed significant declines in NTD prevalence and these declines were greater in countries where folic acid fortification of staples reached the majority of the population at risk, such as Chile and Costa Rica. PMID:23464652

Changing the characteristics and properties of zeolite Y and nano-anatase in the formation of a nano-anatase/Y composite with improved photocatalytic and adsorption properties

NASA Astrophysics Data System (ADS)

Domoroshchina, E. N.; Chernyshev, V. V.; Kuz'micheva, G. M.; Dorokhov, A. V.; Pirutko, L. V.; Kravchenko, G. V.; Chumakov, R. B.

2018-02-01

Zeolite Y and the NTD/Y nanocomposite, which were synthesized in situ (the addition of zeolite Y to the reaction mixture in the course of the synthesis of NTD by the sulfate method), were studied by a variety of methods. The decrease in the particle size (scanning electron microscopy) and the water content in pores (X-ray powder diffraction study, the full-profile Rietveld method, IR spectroscopy, differential scanning calorimetry), the increase in OH groups content and the decrease in the water content on the surface of zeolite (X-ray photoelectron spectroscopy) in the composition of NTD/Y compared to the initial zeolite Y were all established. A larger specific surface area of NTD/Y (Brunauer-Emmet-Teller method) compared to the initial zeolite Y is due to the fact that zeolite Y in the nanocomposite contains a smaller amount of water because of the synthesis conditions and the presence of nanocrystalline NTD on the surface of zeolite particles. It was found that NTD/Y nanocomposite exhibits a higher photocatalytic activity in the model decomposition reaction of methyl orange under UV and adsorption capacity for the extraction of P(V) and As(V) ions from aqueous media compared to the initial zeolite and pure NTD obtained under the same conditions, which differs from NTD/Y by the larger particle size, the smaller specific surface and the smaller content of OH groups and water on the surface. The role of Bronsted and Lewis centers in the realization of properties is discussed.

AIRCRAFT SHELTER-DICE THROW Data Report

DTIC Science & Technology

1977-03-01

damping fluid viscosity is temperature dependent, a number of thermistors were installed at velocity transducer locations. Accurate calibra- tion of these... thermistors enabled the temperatures at the velocity gage locations to be _etermi.ied through measurement of the thermistor resistances. These...stationary (reference) targets. As shown in Figures C-3 and C-5, targets were fabricated from steel pipe and welded to imbedded steel plates in the

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

NASA Astrophysics Data System (ADS)

Curry, M. J.; England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carr, S. M.; Carroll, M. S.

2015-05-01

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10-100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

NASA Astrophysics Data System (ADS)

Chong, Haining; Wang, Zhewei; Chen, Chaonan; Xu, Zemin; Wu, Ke; Wu, Lan; Xu, Bo; Ye, Hui

2018-04-01

In order to suppress dislocation generation, we develop a "three-step growth" method to heteroepitaxy low dislocation density germanium (Ge) layers on silicon with the MBE process. The method is composed of 3 growth steps: low temperature (LT) seed layer, LT-HT intermediate layer as well as high temperature (HT) epilayer, successively. Threading dislocation density (TDD) of epitaxial Ge layers is measured as low as 1.4 × 106 cm-2 by optimizing the growth parameters. The results of Raman spectrum showed that the internal strain of heteroepitaxial Ge layers is tensile and homogeneous. During the growth of LT-HT intermediate layer, TDD reduction can be obtained by lowering the temperature ramping rate, and high rate deposition maintains smooth surface morphology in Ge epilayer. A mechanism based on thermodynamics is used to explain the TDD and surface morphological dependence on temperature ramping rate and deposition rate. Furthermore, we demonstrate that the Ge layer obtained can provide an excellent platform for III-V materials integrated on Si.

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lanxiang; Wang, Wei; Zhou, Qian

2015-07-14

We investigate the impact of pulsed excimer laser anneal on fully strained germanium-tin alloys (Ge{sub 1−x}Sn{sub x}) epitaxially grown on Ge substrate by molecular beam epitaxy. Using atomic force microscopy, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, the morphological and compositional evolution of Ge{sub 1−x}Sn{sub x} with Sn content up to 17% after annealing using various conditions is studied. Ge{sub 0.83}Sn{sub 0.17} samples annealed at 80 mJ/cm{sup 2} or 150 mJ/cm{sup 2} have no observable changes with respect to the as-grown sample. However, Ge{sub 0.83}Sn{sub 0.17} samples annealed at 250 mJ/cm{sup 2} or 300 mJ/cm{sup 2} have Sn-richmore » islands on the surface, which is due to Sn segregation in the compressively strained epitaxial film. For Ge{sub 0.89}Sn{sub 0.11}, significant Sn redistribution occurs only when annealed at 300 mJ/cm{sup 2}, indicating that it has better thermal stability than Ge{sub 0.83}Sn{sub 0.17}. A mechanism is proposed to explain the formation of Sn-rich islands and Sn-depleted regions.« less

Monte Carlo simulation of gamma-ray interactions in an over-square high-purity germanium detector for in-vivo measurements

NASA Astrophysics Data System (ADS)

Saizu, Mirela Angela

2016-09-01

The developments of high-purity germanium detectors match very well the requirements of the in-vivo human body measurements regarding the gamma energy ranges of the radionuclides intended to be measured, the shape of the extended radioactive sources, and the measurement geometries. The Whole Body Counter (WBC) from IFIN-HH is based on an “over-square” high-purity germanium detector (HPGe) to perform accurate measurements of the incorporated radionuclides emitting X and gamma rays in the energy range of 10 keV-1500 keV, under conditions of good shielding, suitable collimation, and calibration. As an alternative to the experimental efficiency calibration method consisting of using reference calibration sources with gamma energy lines that cover all the considered energy range, it is proposed to use the Monte Carlo method for the efficiency calibration of the WBC using the radiation transport code MCNP5. The HPGe detector was modelled and the gamma energy lines of 241Am, 57Co, 133Ba, 137Cs, 60Co, and 152Eu were simulated in order to obtain the virtual efficiency calibration curve of the WBC. The Monte Carlo method was validated by comparing the simulated results with the experimental measurements using point-like sources. For their optimum matching, the impact of the variation of the front dead layer thickness and of the detector photon absorbing layers materials on the HPGe detector efficiency was studied, and the detector’s model was refined. In order to perform the WBC efficiency calibration for realistic people monitoring, more numerical calculations were generated simulating extended sources of specific shape according to the standard man characteristics.

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gajula, D. R., E-mail: dgajula01@qub.ac.uk; Baine, P.; Armstrong, B. M.

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

NASA Astrophysics Data System (ADS)

Zhu, G. H.; Lee, H.; Lan, Y. C.; Wang, X. W.; Joshi, G.; Wang, D. Z.; Yang, J.; Vashaee, D.; Guilbert, H.; Pillitteri, A.; Dresselhaus, M. S.; Chen, G.; Ren, Z. F.

2009-05-01

The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison with bulk crystalline Si. However, nanosize interfaces are not as effective as point defects in scattering phonons with wavelengths shorter than 1 nm. We further found that a 5at.% Ge replacing Si is very efficient in scattering phonons shorter than 1 nm, resulting in a further thermal conductivity reduction by a factor of 2, thereby leading to a thermoelectric figure of merit 0.95 for Si95Ge5, similar to that of large grained Si80Ge20 alloys.

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.

PubMed

Shamim, S; Mahapatra, S; Scappucci, G; Klesse, W M; Simmons, M Y; Ghosh, A

2014-06-13

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

NASA Astrophysics Data System (ADS)

Aziz, Umar Abdul; Nadhirah Mohamad Rashid, Nur; Rahmah Aid, Siti; Centeno, Anthony; Ikenoue, Hiroshi; Xie, Fang

2017-05-01

Germanium (Ge) has re-emerged as a potential candidate to replace silicon (Si) as a substrate, due to its higher carrier mobility properties that are the key point for the realization of devices high drive current. However, the fabrication process of Ge is confronted with many problems such as low dopant electrical activation and the utilization of heavy n-type dopant atoms during ion implantation. These problems result in more damage and defects that can affect dopant activation. This paper reports the electrical and structural analysis on the formation of n-type junction in Ge substrate by ion implantation, followed by excimer laser annealing (ELA) using KrF laser. ELA parameters such as laser fluences were varied from 100 - 2000 mJ/cm2 and shot number between 1 - 1000 to obtain the optimized parameter of ELA with a high degree of damage and defect removal. Low resistance with a high degree of crystallinity is obtained for the samples annealed with less than five shot number. Higher shot number with high laser fluence, shows a high degree of ablation damage.

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

NASA Astrophysics Data System (ADS)

Boninelli, S.; Milazzo, R.; Carles, R.; Houdellier, F.; Duffy, R.; Huet, K.; La Magna, A.; Napolitani, E.; Cristiano, F.

2018-05-01

Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 × 1020 cm-3) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom βPs = +0.7 ± 0.1 Å3. This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work.

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

A dual-PIXE tomography setup for reconstruction of Germanium in ICF target

NASA Astrophysics Data System (ADS)

Guo, N.; Lu, H. Y.; Wang, Q.; Meng, J.; Gao, D. Z.; Zhang, Y. J.; Liang, X. X.; Zhang, W.; Li, J.; Ma, X. J.; Shen, H.

2017-08-01

Inertial Confinement Fusion (ICF) is one type of fusion energy research which could initiate nuclear fusion reactions through heating and compressing thermonuclear fuel. Compared to a pure plastic target, Germanium doping into the CH ablator layer by Glow Discharge Polymer (GDP) technique can increase the ablation velocity and the standoff distance between the ablation front and laser-deposition region. During target fabrication process, quantitative doping of Ge should be accurately controlled. Particle Induced X-ray Emission Tomography (PIXE-T) can make not only quantification of the concentration, but also reconstruction of the spatial distribution of doped element. The Si (Li) detector for PIXE tomography technique had a disadvantage of low counting rate. To make up this deficiency, another detector of Si (Li) with the same configuration positioned at the opposite side with the same detective angle 135° have been implemented. Simultaneously acquired elemental maps of Ge obtained using two detectors may be different because of the X-ray absorption along the X-ray exit route in the target. In this paper, the X-ray detection efficiency is drastically improved by this dual-PIXE tomography system.

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

PubMed

Tan, Dezhi; Zhang, Wenjin; Wang, Xiaofan; Koirala, Sandhaya; Miyauchi, Yuhei; Matsuda, Kazunari

2017-08-31

Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 10 3 A W -1 , an extremely high specific detectivity of 5.6 × 10 14 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.

Development of magnesium-based biodegradable metals with dietary trace element germanium as orthopaedic implant applications.

PubMed

Bian, Dong; Zhou, Weirui; Deng, Jiuxu; Liu, Yang; Li, Wenting; Chu, Xiao; Xiu, Peng; Cai, Hong; Kou, Yuhui; Jiang, Baoguo; Zheng, Yufeng

2017-12-01

From the perspective of element biosafety and dietetics, the ideal alloying elements for magnesium should be those which are essential to or naturally presented in human body. Element germanium is a unique metalloid in the carbon group, chemically similar to its group neighbors, Si and Sn. It is a dietary trace element that naturally presents in human body. Physiological role of Ge is still unanswered, but it might be necessary to ensure normal functioning of the body. In present study, novel magnesium alloys with dietary trace element Ge were developed. Feasibility of those alloys to be used as orthopaedic implant applications was systematically evaluated. Mg-Ge alloys consisted of α-Mg matrix and eutectic phases (α-Mg + Mg 2 Ge). Mechanical properties of Mg-Ge alloys were comparable to current Mg-Ca, Mg-Zn and Mg-Sr biodegradable metals. As-rolled Mg-3Ge alloy exhibited outstanding corrosion resistance in vitro (0.02 mm/y, electrochemical) with decent corrosion rate in vivo (0.6 mm/y, in rabbit tibia). New bone could directly lay down onto the implant and grew along its surface. After 3 months, bone and implant were closely integrated, indicating well osseointegration being obtained. Generally, this is a pioneering study on the in vitro and in vivo performances of novel Mg-Ge based biodegradable metals, and will benefit the future development of this alloy system. The ideal alloying elements for magnesium-based biodegradable metals should be those which are essential to or naturally presented in human body. Element germanium is a unique metalloid in the carbon group. It is a dietary trace element that naturally presents in human body. In present study, feasibility of Mg-Ge alloys to be utilized as orthopedic applications was systematically investigated, mainly focusing on the microstructure, mechanical property, corrosion behavior and biocompatibility. Our findings showed that Mg-3Ge alloy exhibited superior corrosion resistance to current Mg-Ca, Mg

Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces

DOEpatents

Ownby, G.W.; White, C.W.; Zehner, D.M.

1979-12-28

This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an atomically clean region. This can be accomplished in a system at a pressure below 10-/sup 8/ Torr, using Q-switched ruber-laser pulses having an energy density in the range of from about 60 to 190 MW/cm/sup 2/.

Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces

DOEpatents

Ownby, Gary W.; White, Clark W.; Zehner, David M.

1981-01-01

This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an automatically clean region. This can be accomplished in a system at a pressure below 10.sup.-8 Torr, using Q-switched ruby-laser pulses having an energy density in the range of from about 60 to 190 MW/cm.sup.2.

Developments in United Kingdom Waveguide Power Standards,

DTIC Science & Technology

1980-04-01

would manifest itself when a calibrated bolometer was compared with a non-bolometric standard (including a thermistor standard where the current...Geneva mechanism and this ensures extremely smooth mechanical operation. d) temperature control of the thermistor power meters at DI and D2 to better... thermistor heads. During calibration in terms of a power standard, and a subsequent measurement, the noise and drift in the standard power meter and device

Integrated Healthcare Delivery: A Qualitative Research Approach to Identifying and Harmonizing Perspectives of Integrated Neglected Tropical Disease Programs

PubMed Central

Jacobson, Julie; Mosher, Aryc W.; Walson, Judd L.

2016-01-01

Background While some evidence supports the beneficial effects of integrating neglected tropical disease (NTD) programs to optimize coverage and reduce costs, there is minimal information regarding when or how to effectively operationalize program integration. The lack of systematic analyses of integration experiences and of integration processes may act as an impediment to achieving more effective NTD programming. We aimed to learn about the experiences of NTD stakeholders and their perceptions of integration. Methodology We evaluated differences in the definitions, roles, perceived effectiveness, and implementation experiences of integrated NTD programs among a variety of NTD stakeholder groups, including multilateral organizations, funding partners, implementation partners, national Ministry of Health (MOH) teams, district MOH teams, volunteer rural health workers, and community members participating in NTD campaigns. Semi-structured key informant interviews were conducted. Coding of themes involved a mix of applying in-vivo open coding and a priori thematic coding from a start list. Findings In total, 41 interviews were conducted. Salient themes varied by stakeholder, however dominant themes on integration included: significant variations in definitions, differential effectiveness of specific integrated NTD activities, community member perceptions of NTD programs, the influence of funders, perceived facilitators, perceived barriers, and the effects of integration on health system strength. In general, stakeholder groups provided unique perspectives, rather than contrarian points of view, on the same topics. The stakeholders identified more advantages to integration than disadvantages, however there are a number of both unique facilitators and challenges to integration from the perspective of each stakeholder group. Conclusions Qualitative data suggest several structural, process, and technical opportunities that could be addressed to promote more effective and

High resolution gamma-ray spectroscopy at high count rates with a prototype High Purity Germanium detector

NASA Astrophysics Data System (ADS)

Cooper, R. J.; Amman, M.; Vetter, K.

2018-04-01

High-resolution gamma-ray spectrometers are required for applications in nuclear safeguards, emergency response, and fundamental nuclear physics. To overcome one of the shortcomings of conventional High Purity Germanium (HPGe) detectors, we have developed a prototype device capable of achieving high event throughput and high energy resolution at very high count rates. This device, the design of which we have previously reported on, features a planar HPGe crystal with a reduced-capacitance strip electrode geometry. This design is intended to provide good energy resolution at the short shaping or digital filter times that are required for high rate operation and which are enabled by the fast charge collection afforded by the planar geometry crystal. In this work, we report on the initial performance of the system at count rates up to and including two million counts per second.

Microwave Crystallization of Lithium Aluminum Germanium Phosphate Solid-State Electrolyte.

PubMed

Mahmoud, Morsi M; Cui, Yuantao; Rohde, Magnus; Ziebert, Carlos; Link, Guido; Seifert, Hans Juergen

2016-06-23

Lithium aluminum germanium phosphate (LAGP) glass-ceramics are considered as promising solid-state electrolytes for Li-ion batteries. LAGP glass was prepared via the regular conventional melt-quenching method. Thermal, chemical analyses and X-ray diffraction (XRD) were performed to characterize the prepared glass. The crystallization of the prepared LAGP glass was done using conventional heating and high frequency microwave (MW) processing. Thirty GHz microwave (MW) processing setup were used to convert the prepared LAGP glass into glass-ceramics and compared with the conventionally crystallized LAGP glass-ceramics that were heat-treated in an electric conventional furnace. The ionic conductivities of the LAGP samples obtained from the two different routes were measured using impedance spectroscopy. These samples were also characterized using XRD and scanning electron microscopy (SEM). Microwave processing was successfully used to crystallize LAGP glass into glass-ceramic without the aid of susceptors. The MW treated sample showed higher total, grains and grain boundary ionic conductivities values, lower activation energy and relatively larger-grained microstructure with less porosity compared to the corresponding conventionally treated sample at the same optimized heat-treatment conditions. The enhanced total, grains and grain boundary ionic conductivities values along with the reduced activation energy that were observed in the MW treated sample was considered as an experimental evidence for the existence of the microwave effect in LAGP crystallization process. MW processing is a promising candidate technology for the production of solid-state electrolytes for Li-ion battery.

NMR solution structure of the N-terminal domain of hERG and its interaction with the S4-S5 linker

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qingxin; Gayen, Shovanlal; Chen, Angela Shuyi

Research highlights: {yields} The N-terminal domain (NTD, eag domain) containing 135 residues of hERG was expressed and purified from E. coli cells. {yields} Solution structure of NTD was determined with NMR spectroscopy. {yields} The alpha-helical region (residues 13-23) was demonstrated to possess the characteristics of an amphipathic helix. {yields} NMR titration confirmed the interaction between NTD and the peptide from the S4-S5 linker. -- Abstract: The human Ether-a-go-go Related Gene (hERG) potassium channel mediates the rapid delayed rectifier current (IKr) in the cardiac action potential. Mutations in the 135 amino acid residue N-terminal domain (NTD) cause channel dysfunction or mis-translocation.more » To study the structure of NTD, it was overexpressed and purified from Escherichia coli cells using affinity purification and gel filtration chromatography. The purified protein behaved as a monomer under purification conditions. Far- and near-UV, circular dichroism (CD) and solution nuclear magnetic resonance (NMR) studies showed that the purified protein was well-folded. The solution structure of NTD was obtained and the N-terminal residues 13-23 forming an amphipathic helix which may be important for the protein-protein or protein-membrane interactions. NMR titration experiment also demonstrated that residues from 88 to 94 in NTD are important for the molecular interaction with the peptide derived from the S4-S5 linker.« less

A new passive radon-thoron discriminative measurement system.

PubMed

Sciocchetti, G; Sciocchetti, A; Giovannoli, P; DeFelice, P; Cardellini, F; Cotellessa, G; Pagliari, M

2010-10-01

A new passive radon-thoron discriminative measurement system has been developed for monitoring radon and thoron individually. It consists of a 'couple' of passive integrating devices with a CR39 nuclear track detector (NTD). The experimental prototype is based on the application of a new concept of NTD instrument developed at ENEA, named Alpha-PREM, acronym of piston radon exposure meter, which allows controlling the detector exposure with a patented sampling technique (Int. Eu. Pat. and US Pat.). The 'twin diffusion chambers system' was based on two A-PREM devices consisting of the standard device, named NTD-Rn, and a modified version, named NTD-Rn/Tn, which was set up to improve thoron sampling efficiency of the diffusion chamber, without changing the geometry and the start/stop function of the NTD-Rn device. Coupling devices fitted on each device allowed getting a system, which works as a double-chamber structure when deployed at the monitoring position. In this paper both technical and physical aspects are considered.

Supplement use and other characteristics among pregnant women with a previous pregnancy affected by a neural tube defect - United States, 1997-2009.

PubMed

Arth, Annelise; Tinker, Sarah; Moore, Cynthia; Canfield, Mark; Agopian, Aj; Reefhuis, Jennita

2015-01-16

Neural tube defects (NTDs) include anomalies of the brain (anencephaly and encephalocele) and spine (spina bifida). Even with ongoing mandatory folic acid fortification of enriched cereal grain products, the U.S. Preventive Services Task Force recommends that women of childbearing potential consume a daily supplement containing 400 µg-800 µg of folic acid. Women with a prior NTD-affected pregnancy have an increased risk for having another NTD-affected pregnancy, and if they are planning another pregnancy, the recommendation is that they consume high-dosage folic acid supplements (4.0 mg/day) beginning ≥4 weeks before conception and continuing through the first 12 weeks of pregnancy. To learn whether folic acid supplementation (from multivitamins or single- ingredient supplements) was commonly used during pregnancy by women with a previous NTD-affected pregnancy, supplement use was assessed among a convenience sample of women with a previous NTD-affected pregnancy who participated in the National Birth Defects Prevention Study (NBDPS), a case-control study of major birth defects in the United States. Characteristics of women who previously had an NTD-affected pregnancy and whose index pregnancy (pregnancy included in NBDPS) was either affected by an NTD (N = 17) (i.e., recurrence-cases) or resulted in a live-born infant without a major birth defect (N = 10) (i.e., recurrence-controls) were assessed. Taking a supplement that included folic acid was more common among recurrence-control mothers (80%) than recurrence-case mothers (35%). The recommendation that women should take folic acid supplements just before and during early pregnancy is not being followed by many women and offers an opportunity for NTD prevention, especially among women who are at a higher risk because they have had a previous pregnancy affected by an NTD.

Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys: Lattice dynamics and thermoelectric properties of nc Si-Ge alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Claudio, Tania; Stein, Niklas; Petermann, Nils

2015-10-26

The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon–germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low-temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000°C. A peak figure of merit zT=0.88 at 900°C is observed and is comparatively insensitive to the aforementioned parameter variations.

Device optimization and scaling properties of a gate-on-germanium source tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Chattopadhyay, Avik; Mallik, Abhijit; Omura, Yasuhisa

2015-06-01

A gate-on-germanium source (GoGeS) tunnel field-effect transistor (TFET) shows great promise for low-power (sub-0.5 V) applications. A detailed investigation, with the help of a numerical device simulator, on the effects of variation in different structural parameters of a GoGeS TFET on its electrical performance is reported in this paper. Structural parameters such as κ-value of the gate dielectric, length and κ-value of the spacer, and doping concentrations of both the substrate and source are considered. A low-κ symmetric spacer and a high-κ gate dielectric are found to yield better device performance. The substrate doping influences only the p-i-n leakage floor. The source doping is found to significantly affect performance parameters such as OFF-state current, ON-state current and subthreshold swing, in addition to a threshold voltage shift. Results of the investigation on the gate length scaling of such devices are also reported in this paper.

Influence of Containment on the Growth of Germanium-Silicon in Microgravity

NASA Technical Reports Server (NTRS)

Volz, M. P.; Mazuruk, K.; Croll, A.; Sorgenfrei, T.

2017-01-01

A series of Ge(sub 1-x)Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and 'detached' Bridgman methods and the ground-based float zone technique. 'Detached' or 'dewetted' Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. A meniscus bridges this gap between the top of the crystal and the crucible wall. Theoretical models indicate that an important parameter governing detachment is the pressure differential across this meniscus. An experimental method has been developed to control this pressure differential in microgravity that does not require connection of the ampoule volume to external gases or changes in the temperature profile during growth. Experiments will be conducted with positive, negative or zero pressure differential across the meniscus. Characterization results of ground-based experiments, including etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction will also be described.

Analyse de la formation des phases du systeme cuivre-germanium par diffraction des rayons X sur des echantillons d'epaisseur nanoscopique

NASA Astrophysics Data System (ADS)

Aubin, Alexandre

With the miniaturization of electronic devices, driven by cost reduction and performance increase, new materials have to be introduced in their fabrication process to solve many emerging problems. These challenges are brought forth by the ITRS (International Technology Roadmap for Semiconductors), a comity in charge of listing the technological needs for the upcoming generations of integrated circuits. Many fields of interest require new technological developments, from global to local interconnections, the transistor gate, the gate insulator thickness, etc. One of the major challenges mentioned in the ITRS roadmap is the need for a new interconnection material. Indeed, the need for a diffusion barrier for the copper lines in local and global interconnections of integrated circuits, the main technology in today's devices, is becoming more hindering with the decrease of the metallization lines. cross-section. In the 90's, a binary compound of copper and germanium, known as the epsilon1-Cu3Ge phase, was investigated as a replacement for aluminum because of its low resistivity, that can reach as low as 5.5muO·cm [1], its stability in contact with both silicon and silicon oxide [2] as well as its thermal stability during anneals [3]. However, copper proved to be a better choice at the time because of its low bulk resistivity of 1.68muO·cm at room temperature[4]. The objective of this master thesis is to re-examine the copper-germanium system, and more specifically the epsilon1-Cu3Ge, for future applications in the microelectronics industry. Different X ray diffraction techniques were used to obtain more information on the system, including in situ X ray diffraction during 3°C/s anneals in an inert helium atmosphere with simultaneous resistance measurement, theta-2theta scans to detect diffraction peaks of the present phases after sample quenching as well as partial acquisition of the reciprocal space of quenched samples which allowed to obtain pole figures for d

Structure, Dynamics, and Allosteric Potential of Ionotropic Glutamate Receptor N-Terminal Domains

PubMed Central

Krieger, James; Bahar, Ivet; Greger, Ingo H.

2015-01-01

Ionotropic glutamate receptors (iGluRs) are tetrameric cation channels that mediate synaptic transmission and plasticity. They have a unique modular architecture with four domains: the intracellular C-terminal domain (CTD) that is involved in synaptic targeting, the transmembrane domain (TMD) that forms the ion channel, the membrane-proximal ligand-binding domain (LBD) that binds agonists such as L-glutamate, and the distal N-terminal domain (NTD), whose function is the least clear. The extracellular portion, comprised of the LBD and NTD, is loosely arranged, mediating complex allosteric regulation and providing a rich target for drug development. Here, we briefly review recent work on iGluR NTD structure and dynamics, and further explore the allosteric potential for the NTD in AMPA-type iGluRs using coarse-grained simulations. We also investigate mechanisms underlying the established NTD allostery in NMDA-type iGluRs, as well as the fold-related metabotropic glutamate and GABAB receptors. We show that the clamshell motions intrinsically favored by the NTD bilobate fold are coupled to dimeric and higher-order rearrangements that impact the iGluR LBD and ultimately the TMD. Finally, we explore the dynamics of intact iGluRs and describe how it might affect receptor operation in a synaptic environment. PMID:26255587

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Curry, M. J.; Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131; Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123

2015-05-18

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification.more » The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.« less

Cryogenic Preamplification of a Single-Electron-Transistor using a Silicon-Germanium Heterojunction-Bipolar-Transistor

DOE PAGES

Curry, Matthew J.; England, Troy Daniel; Bishop, Nathaniel; ...

2015-05-21

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. Furthermore, the transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to withoutmore » the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. We found that the circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.« less

Long-Period Gratings in Highly Germanium-Doped, Single-Mode Optical Fibers for Sensing Applications

PubMed Central

Schlangen, Sebastian; Bremer, Kort; Zheng, Yulong; Böhm, Sebastian; Steinke, Michael; Wellmann, Felix; Neumann, Jörg; Overmeyer, Ludger

2018-01-01

Long-period fiber gratings (LPGs) are well known for their sensitivity to external influences, which make them interesting for a large number of sensing applications. For these applications, fibers with a high numerical aperture (i.e., fibers with highly germanium (Ge)-doped fused silica fiber cores) are more attractive since they are intrinsically photosensitive, as well as less sensitive to bend- and microbend-induced light attenuations. In this work, we introduce a novel method to inscribe LPGs into highly Ge-doped, single-mode fibers. By tapering the optical fiber, and thus, tailoring the effective indices of the core and cladding modes, for the first time, an LPG was inscribed into such fibers using the amplitude mask technique and a KrF excimer laser. Based on this novel method, sensitive LPG-based fiber optic sensors only a few millimeters in length can be incorporated in bend-insensitive fibers for use in various monitoring applications. Moreover, by applying the described inscription method, the LPG spectrum can be influenced and tailored according to the specific demands of a particular application. PMID:29702600

In situ dynamic TEM characterization of unsteady crystallization during laser processing of amorphous germanium

DOE PAGES

Egan, Garth C.; Li, Tian T.; Roehling, John D.; ...

2017-10-03

The unsteady propagation mechanism for the crystallization of amorphous germanium (a-Ge) was studied with in situ movie-mode dynamic transmission electron microscopy (MM-DTEM). We used short laser pulses to heat sputter-deposited a-Ge films and the resulting crystallization process was imaged with up to 16 sequential 50 ns long electron pulses separated by a controlled delay that was varied between 0.5 and 5 μs. The unsteady crystallization in the radial, net-growth direction was observed to occur at a decreasing rate of ~1.5–0.2 m/s through a mechanism involving the formation of discrete ~1.1 μm wide bands that grew with velocities of 9–12 m/smore » perpendicular to the radial direction and along the perimeter of the crystallized area. The crystallization rate and resulting microstructure were consistent with a liquid-mediated growth mechanism, which suggests that locally the band front reaches the amorphous melting temperature of Ge. Furthermore, a mechanism based on the notion of a critical temperature is proposed to explain the unsteady, banded behavior.« less

The C677T polymorphism of the methylenetetrahydrofolate reductase gene in Mexican mestizo neural-tube defect parents, control mestizo and native populations.

PubMed

Dávalos, I P; Olivares, N; Castillo, M T; Cantú, J M; Ibarra, B; Sandoval, L; Morán, M C; Gallegos, M P; Chakraborty, R; Rivas, F

2000-01-01

The C677T mutation of the methylenetetrahydrofolate reductase (MTHFR) gene, associated with the thermolabile form of the enzyme, has reportedly been found to be increased in neural-tube defects (NTD), though this association is still unclear. A group of 107 mestizo parents of NTD children and five control populations: 101 mestizo (M), 50 Huichol (H), 38 Tarahumara (T), 21 Purepecha (P) and 20 Caucasian (C) individuals were typed for the MTHFR C677T variant by the PCR/RFLP (HinfI) method. Genotype frequencies were in agreement with the Hardy-Weinberg expectations in all six populations. Allele frequency (%) of the C677T variant was 45 in NTD, 44 in M, 56 in H, 36 in T, 57 in P, 35 in C. Pairwise inter-population comparisons of allele frequency disclosed a very similar distribution between NTD and M groups (exact test, P=0.92). Among controls, differences between M and individual native groups were NS (0.06NTD does not support a causal relationship between NTD and parental MTHFR C677T genotypes. Thus, the C677T variant cannot be regarded as a major genetic risk factor for NTD in Mexican mestizo parents. Otherwise, C677T in Mexico is very frequent, especially in Huichol and Purepecha natives, as compared with other groups world wide.

The role of 'no-touch' automated room disinfection systems in infection prevention and control.

PubMed

Otter, J A; Yezli, S; Perl, T M; Barbut, F; French, G L

2013-01-01

Surface contamination in hospitals is involved in the transmission of pathogens in a proportion of healthcare-associated infections. Admission to a room previously occupied by a patient colonized or infected with certain nosocomial pathogens increases the risk of acquisition by subsequent occupants; thus, there is a need to improve terminal disinfection of these patient rooms. Conventional disinfection methods may be limited by reliance on the operator to ensure appropriate selection, formulation, distribution and contact time of the agent. These problems can be reduced by the use of 'no-touch' automated room disinfection (NTD) systems. To summarize published data related to NTD systems. Pubmed searches for relevant articles. A number of NTD systems have emerged, which remove or reduce reliance on the operator to ensure distribution, contact time and process repeatability, and aim to improve the level of disinfection and thus mitigate the increased risk from the prior room occupant. Available NTD systems include hydrogen peroxide (H(2)O(2)) vapour systems, aerosolized hydrogen peroxide (aHP) and ultraviolet radiation. These systems have important differences in their active agent, delivery mechanism, efficacy, process time and ease of use. Typically, there is a trade-off between time and effectiveness among NTD systems. The choice of NTD system should be influenced by the intended application, the evidence base for effectiveness, practicalities of implementation and cost constraints. NTD systems are gaining acceptance as a useful tool for infection prevention and control. Copyright © 2012 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.

Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

NASA Astrophysics Data System (ADS)

Cecil, Kanchan; Singh, Jawar

2017-01-01

Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead of Silicon (Si) as a "Source region" material in dopingless (DL) tunnel field-effect transistor (DLTFET). We observed that the Ge source DLTFET delivers much better performance in comparison to Si DLTFET under various analog/RF figure of merits (FOMs), such as transconductance (gm), transconductance generation factor (TGF) (gm /Id), output conductance (gd), output resistance (RO), intrinsic gain (gmRO), intrinsic gate delay (τ) and RF FOMs, like unity gain frequency (fT), gain bandwidth product (GBW) along with various gate capacitances. These parameters were extracted using 2D TCAD device simulations through small signal ac analysis. Higher ION /IOFF ratio (1014) of Ge source DLTFET can reduce the dynamic as well as static power in digital circuits, while higher transconductance generation factor (gm /Id) ∼ 2287 V-1 can lower the bias power of an amplifier. Similarly, enhanced RF FOMs i.e unity gain frequency (fT) and gain bandwidth product (GBW) in Gigahertz range projects the proposed device preference for RF circuits.

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

NASA Technical Reports Server (NTRS)

Vining, Cronin B.

1991-01-01

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

High duty cycle far-infrared germanium lasers

NASA Astrophysics Data System (ADS)

Chamberlin, Danielle Russell

The effects of crystal geometry, heat transport, and optics on high duty cycle germanium hole population inversion lasers are investigated. Currently the laser's low duty cycle limits its utility for many applications. This low duty cycle is a result of the combination of the large electrical input power necessary and insufficient heat extraction. In order to achieve a continuous-wave device, the input power must be decreased and the cooling power increased. In order to improve laser efficiency and lower the input power, the effect of laser crystal geometry on the electric field uniformity is considered. Geometries with d/L>>1 or <<1 are shown to have improved electric field uniformity, where d is the distance between electrical contacts and L is the length in the direction of the Hall electric field. A geometry with d/L>>1 is shown to decrease the threshold voltage for lasing. Laser crystals with the traditional contact geometry have been compared to a new, planar contact design with both electrical contacts on the same side of the laser crystal. This new geometry provides a large d/L ratio while also allowing effective heat sinking. A pure, single-crystal silicon heat sink is developed for planar contact design lasers, which improves the duty cycle tenfold. For the traditional contact design, copper heat sinks are developed that demonstrate cooling powers up to 10 Watts. The effects of thermal conductivity, surface area, and interfacial thermal resistance on the heat transport are compared. To improve the cavity quality, thereby allowing for smaller crystal volumes, new optical designs are investigated. A vertical cavity structure is demonstrated for the planar contact structure using strontium titanate single crystals as mirrors. A mode-selecting cavity is implemented for the traditional contact design. The spectra of small-volume, near-threshold lasers are measured. In contrast to the emission of larger lasers, these lasers emit within narrow frequency peaks

Electrical conductivity of high-purity germanium crystals at low temperature

NASA Astrophysics Data System (ADS)

Yang, Gang; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

2018-05-01

The temperature dependence of electrical conductivity of single-crystal and polycrystalline high-purity germanium (HPGe) samples has been investigated in the temperature range from 7 to 100 K. The conductivity versus inverse of temperature curves for three single-crystal samples consist of two distinct temperature ranges: a high-temperature range where the conductivity increases to a maximum with decreasing temperature, and a low-temperature range where the conductivity continues decreasing slowly with decreasing temperature. In contrast, the conductivity versus inverse of temperature curves for three polycrystalline samples, in addition to a high- and a low-temperature range where a similar conductive behavior is shown, have a medium-temperature range where the conductivity decreases dramatically with decreasing temperature. The turning point temperature ({Tm}) which corresponds to the maximum values of the conductivity on the conductivity versus inverse of temperature curves are higher for the polycrystalline samples than for the single-crystal samples. Additionally, the net carrier concentrations of all samples have been calculated based on measured conductivity in the whole measurement temperature range. The calculated results show that the ionized carrier concentration increases with increasing temperature due to thermal excitation, but it reaches saturation around 40 K for the single-crystal samples and 70 K for the polycrystalline samples. All these differences between the single-crystal samples and the polycrystalline samples could be attributed to trapping and scattering effects of the grain boundaries on the charge carriers. The relevant physical models have been proposed to explain these differences in the conductive behaviors between two kinds of samples.

Review of the factors influencing the motivation of community drug distributors towards the control and elimination of neglected tropical diseases (NTDs).

PubMed

Krentel, Alison; Gyapong, Margaret; Mallya, Shruti; Boadu, Nana Yaa; Amuyunzu-Nyamongo, Mary; Stephens, Mariana; McFarland, Deborah A

2017-12-01

Community drug distributors or neglected tropical disease (NTD) volunteers have played a crucial role in ensuring the success of mass drug administration (MDA) programs using preventive chemotherapy (PC) for lymphatic filariasis, onchocerciasis, schistosomiasis, trachoma and soil transmitted helminths. In recent years however, a noticeable decline in motivation of some of these volunteers has been perceived, potentially negatively impacting the success of these programs. Potential hypotheses for this change in motivation include the long duration of many MDA programs, the change in sociocultural environments as well as the changes to the programs over time. This literature review identifies factors that affect NTD volunteer performance and motivation, which may be used to influence and improve future programming. A systematic search was conducted to identify studies published between January 1995 and September 2016 that investigate factors pertaining to volunteer motivation and performance in NTD drug distribution programs. Searches from several databases and grey literature yielded 400 records, of which 28 articles from 10 countries met the inclusion criteria. Quality assessment of studies was performed using the Critical Appraisal Skills Programme(CASP) checklist. Data pertaining to motivation, performance, retention and satisfaction was extracted and examined for themes. Recurring themes in the literature included monetary and material incentives, intrinsic motivation, gender, cost to participate, and health systems and community support. Of these, community support and the health system were found to be particularly impactful. Very few studies were found to explicitly look at novel incentives for volunteers and very few studies have considered the out of pocket and opportunity costs that NTD volunteers bear carrying out their tasks. There is currently great interest in incorporating more attractive incentive schemes for NTD volunteers. However, our results show

Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Zhang, Wenfeng

2014-11-07

A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scalingmore » to 0.5 nm is also demonstrated based on these understandings.« less

Thermal spike effect in sputtering of porous germanium to form surface pattern by high energy heavy ions irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hooda, Sonu; Khan, S. A.; Kanjilal, D.

2016-05-16

Germanium exhibits a remarkable effect when subjected to high energy heavy ions irradiation. A synergic effect of high electronic energy loss (S{sub e} = 16.4 keV nm{sup −1}) and nuclear energy loss (S{sub n} = 0.1 keV nm{sup −1}) of 100 MeV Ag ions irradiation in Ge is presented. The results show that crystalline Ge is insensitive to the ionizing part of energy loss whereas thermal spike generated in the damaged Ge leads to the formation of porous structure. Further, an unusual high sputtering of the porous structure opens up the sub-surface voids to show the surface pattern. We explore the role of electron and phonon confinement to explainmore » this effect.« less

Development and evaluation of needle trap device geometry and packing methods for automated and manual analysis.

PubMed

Warren, Jamie M; Pawliszyn, Janusz

2011-12-16

For air/headspace analysis, needle trap devices (NTDs) are applicable for sampling a wide range of volatiles such as benzene, alkanes, and semi-volatile particulate bound compounds such as pyrene. This paper describes a new NTD that is simpler to produce and improves performance relative to previous NTD designs. A NTD utilizing a side-hole needle used a modified tip, which removed the need to use epoxy glue to hold sorbent particles inside the NTD. This design also improved the seal between the NTD and narrow neck liner of the GC injector; therefore, improving the desorption efficiency. A new packing method has been developed and evaluated using solvent to pack the device, and is compared to NTDs prepared using the previous vacuum aspiration method. The slurry packing method reduced preparation time and improved reproducibility between NTDs. To evaluate the NTDs, automated headspace extraction was completed using benzene, toluene, ethylbenzene, p-xylene (BTEX), anthracene, and pyrene (PAH). NTD geometries evaluated include: blunt tip with side-hole needle, tapered tip with side-hole needle, slider tip with side-hole, dome tapered tip with side-hole and blunt with no side-hole needle (expanded desorptive flow). Results demonstrate that the tapered and slider tip NTDs performed with improved desorption efficiency. Copyright © 2011 Elsevier B.V. All rights reserved.

Headspace needle-trap analysis of priority volatile organic compounds from aqueous samples: application to the analysis of natural and waste waters.

PubMed

Alonso, Monica; Cerdan, Laura; Godayol, Anna; Anticó, Enriqueta; Sanchez, Juan M

2011-11-11

Combining headspace (HS) sampling with a needle-trap device (NTD) to determine priority volatile organic compounds (VOCs) in water samples results in improved sensitivity and efficiency when compared to conventional static HS sampling. A 22 gauge stainless steel, 51-mm needle packed with Tenax TA and Carboxen 1000 particles is used as the NTD. Three different HS-NTD sampling methodologies are evaluated and all give limits of detection for the target VOCs in the ng L⁻¹ range. Active (purge-and-trap) HS-NTD sampling is found to give the best sensitivity but requires exhaustive control of the sampling conditions. The use of the NTD to collect the headspace gas sample results in a combined adsorption/desorption mechanism. The testing of different temperatures for the HS thermostating reveals a greater desorption effect when the sample is allowed to diffuse, whether passively or actively, through the sorbent particles. The limits of detection obtained in the simplest sampling methodology, static HS-NTD (5 mL aqueous sample in 20 mL HS vials, thermostating at 50 °C for 30 min with agitation), are sufficiently low as to permit its application to the analysis of 18 priority VOCs in natural and waste waters. In all cases compounds were detected below regulated levels. Copyright © 2011 Elsevier B.V. All rights reserved.

Structure, Dynamics, and Allosteric Potential of Ionotropic Glutamate Receptor N-Terminal Domains.

PubMed

Krieger, James; Bahar, Ivet; Greger, Ingo H

2015-09-15

Ionotropic glutamate receptors (iGluRs) are tetrameric cation channels that mediate synaptic transmission and plasticity. They have a unique modular architecture with four domains: the intracellular C-terminal domain (CTD) that is involved in synaptic targeting, the transmembrane domain (TMD) that forms the ion channel, the membrane-proximal ligand-binding domain (LBD) that binds agonists such as L-glutamate, and the distal N-terminal domain (NTD), whose function is the least clear. The extracellular portion, comprised of the LBD and NTD, is loosely arranged, mediating complex allosteric regulation and providing a rich target for drug development. Here, we briefly review recent work on iGluR NTD structure and dynamics, and further explore the allosteric potential for the NTD in AMPA-type iGluRs using coarse-grained simulations. We also investigate mechanisms underlying the established NTD allostery in NMDA-type iGluRs, as well as the fold-related metabotropic glutamate and GABAB receptors. We show that the clamshell motions intrinsically favored by the NTD bilobate fold are coupled to dimeric and higher-order rearrangements that impact the iGluR LBD and ultimately the TMD. Finally, we explore the dynamics of intact iGluRs and describe how it might affect receptor operation in a synaptic environment. Copyright © 2015 The Authors. Published by Elsevier Inc. All rights reserved.

Domain activities of PapC usher reveal the mechanism of action of an Escherichia coli molecular machine.

PubMed

Volkan, Ender; Ford, Bradley A; Pinkner, Jerome S; Dodson, Karen W; Henderson, Nadine S; Thanassi, David G; Waksman, Gabriel; Hultgren, Scott J

2012-06-12

P pili are prototypical chaperone-usher pathway-assembled pili used by Gram-negative bacteria to adhere to host tissues. The PapC usher contains five functional domains: a transmembrane β-barrel, a β-sandwich Plug, an N-terminal (periplasmic) domain (NTD), and two C-terminal (periplasmic) domains, CTD1 and CTD2. Here, we delineated usher domain interactions between themselves and with chaperone-subunit complexes and showed that overexpression of individual usher domains inhibits pilus assembly. Prior work revealed that the Plug domain occludes the pore of the transmembrane domain of a solitary usher, but the chaperone-adhesin-bound usher has its Plug displaced from the pore, adjacent to the NTD. We demonstrate an interaction between the NTD and Plug domains that suggests a biophysical basis for usher gating. Furthermore, we found that the NTD exhibits high-affinity binding to the chaperone-adhesin (PapDG) complex and low-affinity binding to the major tip subunit PapE (PapDE). We also demonstrate that CTD2 binds with lower affinity to all tested chaperone-subunit complexes except for the chaperone-terminator subunit (PapDH) and has a catalytic role in dissociating the NTD-PapDG complex, suggesting an interplay between recruitment to the NTD and transfer to CTD2 during pilus initiation. The Plug domain and the NTD-Plug complex bound all of the chaperone-subunit complexes tested including PapDH, suggesting that the Plug actively recruits chaperone-subunit complexes to the usher and is the sole recruiter of PapDH. Overall, our studies reveal the cooperative, active roles played by periplasmic domains of the usher to initiate, grow, and terminate a prototypical chaperone-usher pathway pilus.

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch; Alper, C.; Ionescu, A. M.

2015-06-29

We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs arising from semiclassical simulations where the inversion layers for electrons and holes featured very symmetric profiles with similar concentration levels at the ON-state. Pseudo-bilayer layouts are attained by inducing a certain asymmetry between the top and the bottom gates so that even though the hole inversion layer is formed at the bottom of the channel, the top gate voltage remains below the required value to trigger the formation of themore » inversion layer for electrons. Resulting benefits from this setup are improved electrostatic control on the channel, enhanced gate-to-gate efficiency, and higher I{sub ON} levels. Furthermore, pseudo-bilayer configurations alleviate the difficulties derived from confining very high opposite carrier concentrations in very thin structures.« less

High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

PubMed

Pan, Huapu; Assefa, Solomon; Green, William M J; Kuchta, Daniel M; Schow, Clint L; Rylyakov, Alexander V; Lee, Benjamin G; Baks, Christian W; Shank, Steven M; Vlasov, Yurii A

2012-07-30

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.

Compact Instruments Measure Helium-Leak Rates

NASA Technical Reports Server (NTRS)

Stout, Stephen; Immer, Christopher

2003-01-01

Compact, lightweight instruments have been developed for measuring small flows of helium and/or detecting helium leaks in solenoid valves when the valves are nominally closed. These instruments do not impede the flows when the valves are nominally open. They can be integrated into newly fabricated valves or retrofitted to previously fabricated valves. Each instrument includes an upstream and a downstream thermistor separated by a heater, plus associated analog and digital heater-control, signal- conditioning, and data-processing circuits. The thermistors and heater are off-the-shelf surface mount components mounted on a circuit board in the flow path. The operation of the instrument is based on a well-established thermal mass-flow-measurement technique: Convection by the flow that one seeks to measure gives rise to transfer of heat from the heater to the downstream thermistor. The temperature difference measured by the thermistors is directly related to the rate of flow. The calibration curve from temperature gradient to helium flow is closely approximated via fifth-order polynomial. A microprocessor that is part of the electronic circuitry implements the calibration curve to compute the flow rate from the thermistor readings.

Positional calibrations of the germanium double sided strip detectors for the Compton spectrometer and imager

NASA Astrophysics Data System (ADS)

Lowell, A.; Boggs, S.; Chiu, J. L.; Kierans, C.; McBride, S.; Tseng, C. H.; Zoglauer, A.; Amman, M.; Chang, H. K.; Jean, P.; Lin, C. H.; Sleator, C.; Tomsick, J.; von Ballmoos, P.; Yang, C. Y.

2016-08-01

The Compton Spectrometer and Imager (COSI) is a medium energy gamma ray (0.2 - 10 MeV) imager designed to observe high-energy processes in the universe from a high altitude balloon platform. At its core, COSI is comprised of twelve high purity germanium double sided strip detectors which measure particle interaction energies and locations with high precision. This manuscript focuses on the positional calibrations of the COSI detectors. The interaction depth in a detector is inferred from the charge collection time difference between the two sides of the detector. We outline our previous approach to this depth calibration and also describe a new approach we have recently developed. Two dimensional localization of interactions along the faces of the detector (x and y) is straightforward, as the location of the triggering strips is simply used. However, we describe a possible technique to improve the x/y position resolution beyond the detector strip pitch of 2 mm. With the current positional calibrations, COSI achieves an angular resolution of 5.6 +/- 0.1 degrees at 662 keV, close to our expectations from simulations.

Thermodynamics Behavior of Germanium During Equilibrium Reactions between FeOx-CaO-SiO2-MgO Slag and Molten Copper

NASA Astrophysics Data System (ADS)

Shuva, M. A. H.; Rhamdhani, M. A.; Brooks, G. A.; Masood, S.; Reuter, M. A.

2016-10-01

The distribution ratio of germanium (Ge), L_{{Ge}}^{s/m} during equilibrium reactions between magnesia-saturated FeOx-CaO-SiO2 (FCS) slag and molten copper has been measured under oxygen partial pressures from 10-10 to 10-7 atm and at temperatures 1473 to 1623 K (1200 to 1350 °C). It was observed that the Ge distribution ratio increases with increasing oxygen partial pressure, and with decreasing temperature. It was also observed that the distribution ratio is strongly dependent on slag basicity. The distribution ratio was observed to increase with increasing optical basicity. At fixed CaO concentration in the slag, the distribution ratio was found to increase with increasing Fe/SiO2 ratio, tending to a plateau at L_{{Ge}}^{s/m} = 0.8. This behavior is consistent with the assessment of ionic bond fraction carried out in this study, and suggested the acidic nature of germanium oxide (GeO2) in the slag system studied. The characterisation results of the quenched slag suggested that Ge is present in the FeOx-CaO-SiO2-MgO slag predominantly as GeO2. At 1573 K (1300 °C) and p_{{{{O}}2 }} = 10-8 atm, the activity coefficient of GeO2 in the slag was calculated to be in the range of 0.24 to 1.50. The results from the current study suggested that less-basic slag, high operating temperature, and low oxygen partial pressure promote a low Ge distribution ratio. These conditions are desired for maximizing Ge recovery, for example, during pyrometallurgical processing of Ge-containing e-waste through secondary copper smelting. Overall, the thermodynamics data generated from this study can be used for process modeling purposes for improving recovery of Ge in primary and secondary copper smelting processes.

Processing and optical characterization of lead calcium titanate borosilicate glass doped with germanium

NASA Astrophysics Data System (ADS)

Gautam, C. R.; Das, Sangeeta; Gautam, S. S.; Madheshiya, Abhishek; Singh, Anod Kumar

2018-04-01

In this study, various compositions of lead calcium titanate borosilicate glass doped with a fixed amount of germanium were synthesized using the rapid melt quench technique. The amorphous nature of the synthesized glass was confirmed by X-ray diffraction and scanning electron microscopy analyses. The structural and optical properties were deduced using Raman, Fourier transform infrared (FTIR), and ultraviolet-visible (UV-Vis) spectroscopy. FTIR spectroscopy confirmed the presence of borate groups in triangular and tetrahedral coordination. Infrared and Raman analyses detected the vibrational bonds of Gesbnd Osbnd Ge, Bsbnd Osbnd Ge, Sisbnd Osbnd Ge, Sisbnd Osbnd Si, and Pbsbnd Osbnd Ge. The energy band gaps were evaluated for the prepared glass samples based on Tauc plots of the UV-Vis spectra. The calculated values of the optical band gap decreased from 2.91 to 2.85 eV as the PbO content increased from x = 0.0 to x = 0.7. Furthermore, the Urbach energy was studied based on the UV-Vis results to confirm the disordered structure of the glass. The calculated densities of the glass samples (1.5835 g/cm3 to 3.9184 g/cm3) increased as the concentration of PbO increased, whereas they decreased with the molar volume.

Significant thermal conductivity reduction of silicon nanowire forests through discrete surface doping of germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Ying; Hong, Guo; Raja, Shyamprasad N.

2015-03-02

Silicon nanowires (SiNWs) are promising materials for the realization of highly-efficient and cost effective thermoelectric devices. Reduction of the thermal conductivity of such materials is a necessary and viable pathway to achieve sufficiently high thermoelectric efficiencies, which are inversely proportional to the thermal conductivity. In this article, vertically aligned forests of SiNW and germanium (Ge)-doped SiNW with diameters around 100 nm have been fabricated, and their thermal conductivity has been measured. The results show that discrete surface doping of Ge on SiNW arrays can lead to 23% reduction in thermal conductivity at room temperature compared to uncoated SiNWs. Such reduction canmore » be further enhanced to 44% following a thermal annealing step. By analyzing the binding energy changes of Ge-3d and Si-2p using X-ray photoelectron spectroscopy, we demonstrate that surface doped Ge interacts strongly with Si, enhancing phonon scattering at the Si-Ge interface as has also been shown in non-equilibrium molecular dynamics studies of single nanowires. Overall, our results suggest a viable pathway to improve the energy conversion efficiency of nanowire-forest thermoelectric nanomaterials.« less

Spin coherence in silicon/silicon-germanium nanostructures

NASA Astrophysics Data System (ADS)

Truitt, James L.

This thesis investigates the spin coherence of electrons in silicon/silicon-germanium (Si/SiGe) quantum wells. With a long spin coherence time, an electron trapped in a quantum dot in Si/SiGe is a prime candidate for a quantum bit (qubit) in a solid state implementation of a quantum computer. In particular, the mechanisms responsible for decoherence are examined in a variety of Si/SiGe quantum wells, and it is seen that their behavior does not correspond to published theories of decoherence in these structures. Transport data are analyzed for all samples to determine the electrical properties of each, taking into account a parallel conduction path seen in all samples. Furthermore, the effect of confining the electrons into nanostructures of varying size in one of the samples is studied. All but one of the samples examined are grown by ultrahigh vacuum chemical vapor deposition at the University of Wisconsin - Madison. The nanostructures are patterned on a sample provided by IBM using the Nabity Pattern Generation Software (NPGS) on a LEO1530 Scanning Electron Microscope, and etched using SF6 in an STS reactive ion etcher. Continuous-wave electron spin resonance studies are done using a Bruker ESP300E spectrometer, with a 4.2K continuous flow cryostat and X-band cavity. In order to fully characterize the sample, electrical measurements were done. Hall bars are etched into the 2DEGs, and Ohmic contacts are annealed in to provide a current path through the 2DEG. Measurements are made both from room temperature down to 2K in a Physical Property Measurement System (PPMS), and at 300mK using a custom built probe in a one shot 3He cryostat made by Oxford Instruments. The custom built probe also allows high frequency excitations, facilitating electrically detected magnetic resonance (EDMR) experiments. In many of the samples, an orientationally dependent electron spin resonance linewidth is seen whose anisotropy is much larger at small angles than that predicted by

Germanium Nanocrystal Solar Cells

NASA Astrophysics Data System (ADS)

Holman, Zachary Charles

Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry

Review of the factors influencing the motivation of community drug distributors towards the control and elimination of neglected tropical diseases (NTDs)

PubMed Central

Gyapong, Margaret; Mallya, Shruti; Boadu, Nana Yaa; Amuyunzu-Nyamongo, Mary; Stephens, Mariana; McFarland, Deborah A.

2017-01-01

Background Community drug distributors or neglected tropical disease (NTD) volunteers have played a crucial role in ensuring the success of mass drug administration (MDA) programs using preventive chemotherapy (PC) for lymphatic filariasis, onchocerciasis, schistosomiasis, trachoma and soil transmitted helminths. In recent years however, a noticeable decline in motivation of some of these volunteers has been perceived, potentially negatively impacting the success of these programs. Potential hypotheses for this change in motivation include the long duration of many MDA programs, the change in sociocultural environments as well as the changes to the programs over time. This literature review identifies factors that affect NTD volunteer performance and motivation, which may be used to influence and improve future programming. Methodology/Principal findings A systematic search was conducted to identify studies published between January 1995 and September 2016 that investigate factors pertaining to volunteer motivation and performance in NTD drug distribution programs. Searches from several databases and grey literature yielded 400 records, of which 28 articles from 10 countries met the inclusion criteria. Quality assessment of studies was performed using the Critical Appraisal Skills Programme(CASP) checklist. Data pertaining to motivation, performance, retention and satisfaction was extracted and examined for themes. Recurring themes in the literature included monetary and material incentives, intrinsic motivation, gender, cost to participate, and health systems and community support. Of these, community support and the health system were found to be particularly impactful. Very few studies were found to explicitly look at novel incentives for volunteers and very few studies have considered the out of pocket and opportunity costs that NTD volunteers bear carrying out their tasks. Conclusions/Significance There is currently great interest in incorporating more

High Dose Hyperfractionated Radiotherapy for Adults with Glioblastomas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koukourakis, Michael; Scarlatos, John; Yiannakakis, Dimitrios

2015-01-15

From 1989 to 1991, 27 patients with glioblastoma multiforme or anaplastic astrocytoma of the brain were treated with radiotherapy. Fifteen of twenty-seven patients were treated through limited volume fields, with a thrice-a-day (1.1 Gy/f) or twice-a-day (1.4 Gy/f) hyperfractionated regimen to a total physical dose of 62–92 Gy (median dose 76 Gy). The remaining 12 were treated with whole brain irradiation (40 Gy of total conventionally fractionated dose) and a localised boost to a total dose of 60 Gy. The hyperfractionated regimen was well tolerated and there was no sign of increased brain oedema to indicate the insertion of amore » split. Of six patients who received a NTD10 (normalised total dose for α/β =10) higher than 71 Gy, five showed CR (83% CR rate) versus three of 21 patients who received a lower NTD10 (14% CR rate). For 13 patients who received a NTD10 higher than 66 Gy, the 18-months survival was 61% (8/13) versus 28% (4/14) for 14 patients who received a NTD10 less than 66 Gy. As far as the late morbidity is concerned, of six patients treated with 76-92 Gy of physical dose, none died because of radiation-induced brain necrosis within 18-42 months of follow-up, and three of them are without evidence of disease 18-31 months after the end of radiation treatment. None of our 15 patients who received less than whole brain irradiation relapsed outside the radiation portals. The present study strongly suggests the use of limited volume hyperfractionated radiotherapy schemes, so as to increase the local tumor dose (NTD10) to values higher than 79 Gy, at the same time keeping the NTD2 (NTD for α/β = 2) below 68 Gy.« less

Adrenal insufficiency is prevalent in HbE/β-thalassaemia paediatric patients irrespective of their clinical severity and transfusion requirement.

PubMed

Nakavachara, Pairunyar; Viprakasit, Vip

2013-12-01

Transfusion dependency is known to cause endocrinopathies in patients with thalassaemia such as adrenal insufficiency, because transfusion-related iron overload is injurious to endocrine organs. Children with HbE/ß-thalassaemia vary greatly in red cell transfusion requirement and some are transfusion dependent (TD), whereas others are nontransfusion dependent (NTD). Because iron overload is thought to be the primary cause of adrenal insufficiency, TD children with HbE/ß-thalassaemia are considered likely candidates for the development of adrenal insufficiency, while the adrenal function of NTD children is generally considered to be normal. As yet, the prevalence of adrenal insufficiency among children with NTD HbE/β-thalassaemia is not known. The present study was performed to (i) assess the prevalence of adrenal insufficiency in children with both TD and NTD HbE/β-thalassaemia and to evaluate whether there is any difference in the prevalence of adrenal insufficiency between both groups and (ii) determine the type of adrenal insufficiency (primary or secondary). We investigated the prevalence of adrenal insufficiency among TD (n = 42) and NTD (n = 43) children with HbE/β-thalassaemia by assessing morning serum cortisol levels, and we distinguished between primary and secondary adrenal insufficiency by assessing the cortisol responses following the 1- and 250-μg ACTH stimulation tests. The prevalence of adrenal insufficiency among TD and NTD children with HbE/β-thalassaemia was 50% and 53·5%, respectively. By using the 250-μg ACTH stimulation test, at least 39% and 23·5% were diagnosed with adrenal gland hypofunction in TD and NTD children, respectively. This is the first study to show that adrenal insufficiency is common among all children with HbE/β-thalassaemia, irrespective of their transfusion history or requirement. Our findings have important implications for the clinical management of these children. © 2013 John Wiley & Sons Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Hyock Joo; Abi-Mosleh, Lina; Wang, Michael L.

LDL delivers cholesterol to lysosomes by receptor-mediated endocytosis. Exit of cholesterol from lysosomes requires two proteins, membrane-bound Niemann-Pick C1 (NPC1) and soluble NPC2. NPC2 binds cholesterol with its isooctyl side chain buried and its 3{beta}-hydroxyl exposed. Here, we describe high-resolution structures of the N-terminal domain (NTD) of NPC1 and complexes with cholesterol and 25-hydroxycholesterol. NPC1(NTD) binds cholesterol in an orientation opposite to NPC2: 3{beta}-hydroxyl buried and isooctyl side chain exposed. Cholesterol transfer from NPC2 to NPC1(NTD) requires reorientation of a helical subdomain in NPC1(NTD), enlarging the opening for cholesterol entry. NPC1 with point mutations in this subdomain (distinct from themore » binding subdomain) cannot accept cholesterol from NPC2 and cannot restore cholesterol exit from lysosomes in NPC1-deficient cells. We propose a working model wherein after lysosomal hydrolysis of LDL-cholesteryl esters, cholesterol binds NPC2, which transfers it to NPC1(NTD), reversing its orientation and allowing insertion of its isooctyl side chain into the outer lysosomal membranes.« less