Heavy Ion and Proton Tests for Subsystem Upset.

DTIC Science & Technology

1988-03-21

R. Kennerud, P. Measel , and K. Wahlin, "Transient And Total Dose Radiation Properties Of The CMOS/SOS EPIC Chip Set", IEEE Trans. on Nucl. Sci., Vol...NS-30, No. 6, Dec. 1983 .(3) T. L. Criswell, P. R. Measel , and K. L. Wahlin, "Single Event Upset P Testing With Relativistic Heavy Ions", IEEE Trans

United States Air Force Summer Research Program 1991. Summer Faculty Research Program (SFRP) Reports. Volume 4. Rome Laboratory, Arnold Engineering Development Center, F. J. Seiler Research Laboratory

DTIC Science & Technology

1992-01-09

Herschfelder, J. 0., C . F. Curtis, and R. B. Bird, "Molecular Theory of Gases and Liquids", John Willey and Sons, New York, (1954), Chs. 7 and 8. 12...AL iryLt’ AND SLOTME 5- FUIING NUERS 1991 Sumn~er FAculty Resezrzi! ?ro-rz~ (SFBZF) Volne 2SbV0d. 4 F496202-4:4#- C -CO076 MtrGary_ Soore ___________ 7...Engineering Tools for Parallel Software Development Dr. John Antonio 2 (Report Not Available at this Time) Dr. Abdul Aziz Bhatti 3 A Taxonomy for

Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

NASA Astrophysics Data System (ADS)

Jacq, S.; Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Sharaiha, A.

2016-04-01

We have synthesized the composition x = 0.01 of the (Sr1-xLax)2(Ta1-xTix)2O7 solid solution, mixing the ferroelectric perovskite phases Sr2Ta2O7 and La2Ti2O7. Related oxide and oxynitride materials have been produced as thin films by magnetron radio frequency sputtering. Reactive sputter deposition was conducted at 750 °C under a 75 vol.% (Ar) + 25 vol.% (N2,O2) mixture. An oxygen-free plasma leads to the deposition of an oxynitride film (Sr0.99La0.01) (Ta0.99Ti0.01)O2N, characterized by a band gap Eg = 2.30 eV and a preferential (001) epitaxial growth on (001) SrTiO3 substrate. Its dielectric constant and loss tangent are respectively Epsilon' = 60 (at 1 kHz) and tanDelta = 62.5 × 10-3. In oxygen-rich conditions (vol.%N2 ≤ 15%), (110) epitaxial (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 oxides films are deposited, associated to a larger band gap value (Eg = 4.55 eV). The oxide films permittivity varies from 45 to 25 (at 1 kHz) in correlation with the decrease in crystalline orientation; measured losses are lower than 5.10-3. For 20 ≤ vol.% N2 ≤ 24.55, the films are poorly crystallized, leading to very low permittivities (minimum Epsilon' = 3). A correlation between the dielectric losses and the presence of an oxynitride phase in the samples is highlighted.