Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Transferable and flexible thin film devices for engineering applications

NASA Astrophysics Data System (ADS)

Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

2014-05-01

Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

Tailoring Thin Film-Lacquer Coatings for Space Application

NASA Technical Reports Server (NTRS)

Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

1998-01-01

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's thermal control requirements, there is often a need for a variation of solar absorptance (Alpha(s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of Alpha(s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Tailoring Thin Film-Lacquer Coatings for Space Applications

NASA Technical Reports Server (NTRS)

Peters, Wanda C.; Harris, George; Miller, Grace; Petro, John

1998-01-01

Thin film coatings have the capability of obtaining a wide range of thermal radiative properties, but the development of thin film coatings can sometimes be difficult and costly when trying to achieve highly specular surfaces. Given any space mission's then-nal control requirements, there is often a need for a variation of solar absorptance (alpha(sub s)), emittance (epsilon) and/or highly specular surfaces. The utilization of thin film coatings is one process of choice for meeting challenging thermal control requirements because of its ability to provide a wide variety of alpha(sub s)/epsilon ratios. Thin film coatings' radiative properties can be tailored to meet specific thermal control requirements through the use of different metals and the variation of dielectric layer thickness. Surface coatings can be spectrally selective to enhance radiative coupling and decoupling. The application of lacquer to a surface can also provide suitable specularity for thin film application without the cost and difficulty associated with polishing.

Integrated thin film cadmium sulfide solar cell module

NASA Technical Reports Server (NTRS)

Mickelsen, R. A.; Abbott, D. D.

1971-01-01

The design, development, fabrication and tests of flexible integrated thin-film cadmium sulfide solar cells and modules are discussed. The development of low cost and high production rate methods for interconnecting cells into large solar arrays is described. Chromium thin films were applied extensively in the deposited cell structures as a means to: (1) achieve high adherence between the cadmium sulfide films and the vacuum-metallized copper substrates, (2) obtain an ohmic contact to the cadmium sulfide films, and (3) improve the adherence of gold films as grids or contact areas.

MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

NASA Astrophysics Data System (ADS)

Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

2018-06-01

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

NASA Astrophysics Data System (ADS)

Kanno, Isaku

2018-04-01

In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

Dewetting of Thin Polymer Films

NASA Astrophysics Data System (ADS)

Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

2001-03-01

DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

Study of microstructure and electroluminescence of zinc sulfide thin film

NASA Astrophysics Data System (ADS)

Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

1998-03-01

The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

NASA Astrophysics Data System (ADS)

Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

2017-08-01

Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

Thin film superconductor magnetic bearings

DOEpatents

Weinberger, Bernard R.

1995-12-26

A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

[Spectral emissivity of thin films].

PubMed

Zhong, D

2001-02-01

In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

2017-05-01

Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Room temperature ferroelectricity in continuous croconic acid thin films

NASA Astrophysics Data System (ADS)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Zhang, Xiaozhe; Wang, Xiao; Yu, Le; Ahmadi, Zahra; Costa, Paulo S.; DiChiara, Anthony D.; Cheng, Xuemei; Gruverman, Alexei; Enders, Axel; Xu, Xiaoshan

2016-09-01

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

Surface proton transport of fully protonated poly(aspartic acid) thin films on quartz substrates

NASA Astrophysics Data System (ADS)

Nagao, Yuki; Kubo, Takahiro

2014-12-01

Thin film structure and the proton transport property of fully protonated poly(aspartic acid) (P-Asp100) have been investigated. An earlier study assessed partially protonated poly(aspartic acid), highly oriented thin film structure and enhancement of the internal proton transport. In this study of P-Asp100, IR p-polarized multiple-angle incidence resolution (P-MAIR) spectra were measured to investigate the thin film structure. The obtained thin films, with thicknesses of 120-670 nm, had no oriented structure. Relative humidity dependence of the resistance, proton conductivity, and normalized resistance were examined to ascertain the proton transport property of P-Asp100 thin films. The obtained data showed that the proton transport of P-Asp100 thin films might occur on the surface, not inside of the thin film. This phenomenon might be related with the proton transport of the biological system.

NMR characterization of thin films

DOEpatents

Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2010-06-15

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

NMR characterization of thin films

DOEpatents

Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

2008-11-25

A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

Thin film cell development workshop report

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1991-01-01

The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

Room temperature ferroelectricity in continuous croconic acid thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structuresmore » of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.« less

Nanostructured Thin Films Obtained from Fischer Aminocarbene Complexes

PubMed Central

Lazo-Jiménez, Rosa E.; Ortega-Alfaro, M. Carmen; López-Cortés, José G.; Alvarez-Toledano, Cecilio; Chávez-Carvayar, José Á.; Ignés-Mullol, Jordi; González-Torres, Maykel; Carreón-Castro, Pilar

2016-01-01

The synthesis of four amphiphilic organometallic complexes with the general formula RC = M(CO)5NH(CH2)15CH3, where R is a ferrocenyl 2(a-b) or a phenyl 4(a-b) group as a donor moiety and a Fischer carbene of chromium (0) or tungsten (0) as an acceptor group, are reported. These four push-pull systems formed Langmuir (L) monolayers at the air-water interface, which were characterized by isotherms of surface pressure versus molecular area and compression/expansion cycles (hysteresis curves); Brewster angle microscopic images were also obtained. By using the Langmuir–Blodgett (LB) method, molecular monolayers were transferred onto glass substrates forming Z-type multilayers. LB films were characterized through ultraviolet-visible spectroscopy, atomic force microscopy and X-ray diffraction techniques. Results indicated that films obtained from 2b complex [(Ferrocenyl)(hexadecylamine)methylidene] pentacarbonyl tungsten (0) are the most stable and homogeneous; due to their properties, these materials may be incorporated into organic electronic devices. PMID:28773289

Electro-optical properties of the metal oxide-carbon thin film system of CdO-LCC

NASA Astrophysics Data System (ADS)

Kokshina, A. V.; Smirnov, A. V.; Razina, A. G.

2016-08-01

This article presents the results of a study electrical and optical properties of the thin film system of CdO-LCC. Cadmium oxide films were obtained by method of thermal oxidation. CdO-LCC thin film system was produced by applying on a CdO film a linear chain carbon film in thickness of 100 nm using the ion-plasma method, after which the obtained system was annealed. The studies showed that the obtained CdO-LCC films are quite transparent in the visible region; it has polycrystalline structure, thickness around 300 nm, the band gap to 2.3 eV. The obtained thin film system has photosensitive properties.

Obtaining phase-pure CZTS thin films by annealing vacuum evaporated CuS/SnS/ZnS stack

NASA Astrophysics Data System (ADS)

Sánchez, T. G.; Mathew, X.; Mathews, N. R.

2016-07-01

Cu2ZnSnS4 (CZTS) thin films were obtained by the sequential thermal evaporation of metal binary sulfides in the order CuS/SnS/ZnS, followed by annealing in Ar/S atmosphere. The as-grown films were annealed at different temperatures ranging between 350 and 600 °C, for 10 min. Based on the preliminary results, the temperatures 550 °C and 600 °C were selected for further optimization and a second batch of films were annealed for different time durations (10 min, 30 min and 60 min) at these temperatures in order to identify the conditions to obtain phase-pure CZTS films. The structural properties and chemical compositions at each temperature were investigated in order to optimize the phase purity and film stoichiometry. We have identified adequate and reproducible conditions to obtain the elemental ratio Cu/(Zn+Sn) and Zn/Sn close to 0.78 and 1.19 respectively, which is in the range of material composition required for promising solar cells. In addition the optimized material showed excellent optical and electrical properties to be used as a photovoltaic absorber layer. The optical band gap was found to be about 1.52 eV, and the carrier concentration, hall mobility, and resistivity were in the range of 8.372×1015 cm-3, 3.103 cm2/Vs and 340.3 Ω-cm respectively. Three traps with activation energies 4.39, 8.1, and 34 meV were detected.

Preliminary Measurements of Thin Film Solar Cells

NASA Image and Video Library

1967-06-21

George Mazaris, works with an assistant to obtain the preliminary measurements of cadmium sulfide thin-film solar cells being tested in the Space Environmental Chamber at the National Aeronautics and Space Administration (NASA) Lewis Research Center. Lewis’ Photovoltaic Fundamentals Section was investigating thin-film alternatives to the standard rigid and fragile solar cells. The cadmium sulfide semiconductors were placed in a light, metallized substrate that could be rolled or furled during launch. The main advantage of the thin-film solar cells was their reduced weight. Lewis researchers, however, were still working on improving the performance of the semiconductor. The new thin-film solar cells were tested in a space simulation chamber in the CW-6 test cell in the Engine Research Building. The chamber created a simulated altitude of 200 miles. Sunlight was simulated by a 5000-watt xenon light. Some two dozen cells were exposed to 15 minutes of light followed by 15 minutes of darkness to test their durability in the constantly changing illumination of Earth orbit. This photograph was taken for use in a NASA recruiting publication.

Low work function, stable thin films

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2000-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Drop dynamics on a thin film: Thin film rupture

NASA Astrophysics Data System (ADS)

Carlson, Andreas; Kim, Pilnam; Stone, Howard A.

2011-11-01

The spreading of a water drop on an oil film that covers a solid substrate is a common event in many industrial processes. We study in experiments the dynamics of a water drop on a thin silicone oil film and quantify its interaction with the solid substrate that supports the film. The oil film becomes unstable and ruptures for solids that are hydrophilic. We determine the ``waiting time,'' the time it takes the water drop to drain the silicone film. This timescale is found to highly depend on how well water wets the solid, illustrating the interplay between intermolecular and hydrodynamic forces in the phenomenon. A phase diagram for the thin film stability is extracted based on waters equilibrium contact angle on the solid, which shows that we can either promote or inhibit de-wetting. As water comes in direct contact with the solid, it spreads and peels off the silicone film. We show the influence of viscosity, equilibrium contact angle and film height on the opening radius of the hole formed as the solid de-wets.

A thin film nitinol heart valve.

PubMed

Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

2005-11-01

In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

PubMed Central

Hauser, Christoph; Richter, Tim; Homonnay, Nico; Eisenschmidt, Christian; Qaid, Mohammad; Deniz, Hakan; Hesse, Dietrich; Sawicki, Maciej; Ebbinghaus, Stefan G.; Schmidt, Georg

2016-01-01

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10−5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials. PMID:26860816

Microstructure engineering of Pt-Al alloy thin films through Monte Carlo simulations

NASA Astrophysics Data System (ADS)

Harris, R. A.; Terblans, J. J.; Swart, H. C.

2014-06-01

A kinetic algorithm, based on the regular solution model, was used in conjunction with the Monte Carlo method to simulate the evolution of a micro-scaled thin film system during exposure to a high temperature environment. Pt-Al thin films were prepared via electron beam physical vapor deposition (EB-PVD) with an atomic concentration ratio of Pt63:Al37. These films were heat treated at an annealing temperature of 400 °C for 16 and 49 minutes. Scanning Auger Microscopy (SAM) (PHI 700) was used to obtain elemental maps while sputtering through the thin films. Simulations were run for the same annealing temperatures and thin-film composition. From these simulations theoretical depth profiles and simulated microstructures were obtained. These were compared to the experimentally measured depth profiles and elemental maps.

Rechargeable Thin-film Lithium Batteries

DOE R&D Accomplishments Database

Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

1993-08-01

Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

ZnS thin films deposition by thermal evaporation for photovoltaic applications

NASA Astrophysics Data System (ADS)

Benyahia, K.; Benhaya, A.; Aida, M. S.

2015-10-01

ZnS thin films were deposited on glass substrates by thermal evaporation from millimetric crystals of ZnS. The structural, compositional and optical properties of the films are studied by X-ray diffraction, SEM microscopy, and UV-VIS spectroscopy. The obtained results show that the films are pin hole free and have a cubic zinc blend structure with (111) preferential orientation. The estimated optical band gap is 3.5 eV and the refractive index in the visible wavelength ranges from 2.5 to 1.8. The good cubic structure obtained for thin layers enabled us to conclude that the prepared ZnS films may have application as buffer layer in replacement of the harmful CdS in CIGS thin film solar cells or as an antireflection coating in silicon-based solar cells.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Compositional ratio effect on the surface characteristics of CuZn thin films

NASA Astrophysics Data System (ADS)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Dielectric and Raman spectroscopy of TlSe thin films

NASA Astrophysics Data System (ADS)

Ozel, Aysen E.; Deger, Deniz; Celik, Sefa; Yakut, Sahin; Karabak, Binnur; Akyüz, Sevim; Ulutas, Kemal

2017-12-01

In this report, the results of Dielectric and Raman spectroscopy of TlSe thin films are presented. The films were deposited in different thicknesses ranging from 290 Å to 3200 Å by thermal evaporation method. The relative permittivity (dielectric constant εr‧) and dielectric loss (εr″) of TlSe thin films were calculated by measuring capacitance (C) and dielectric loss factor (tan δ) in the frequencies ranging between 10-2 Hz-107 Hz and in the temperature ranging between 173 K and 433 K. In the given intervals, both the dielectric constant and the dielectric loss of TlSe thin films decrease with increasing frequency, but increase with increasing temperature. This behavior can be explained as multicomponent polarization in the structure. The ac conductivity obeys the ωs law when s (s < 1). The dielectric constant of TlSe thin films is determined from Dielectric and Raman spectroscopy measurements. The results obtained by two different methods are in agreement with each other.

Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genfa Wu; Anne-Marie Valente; H. Phillips

2004-05-01

An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV.more » The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.« less

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-06-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

Characterization of titanyl phthalocyanine (TiOPc) thin films by microscopic and spectroscopic method

NASA Astrophysics Data System (ADS)

Skonieczny, R.; Makowiecki, J.; Bursa, B.; Krzykowski, A.; Szybowicz, M.

2018-02-01

The titanyl phthalocyanine (TiOPc) thin film deposited on glass, silicon and gold substrate have been studied using Raman spectroscopy, atomic force microscopy (AFM), absorption and profilometry measurements. The TiOPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The Raman spectra have been recorded using micro Raman system equipped with a confocal microscope. Using surface Raman mapping techni que with polarized Raman spectra the polymorphic forms of the TiOPc thin films distribution have been obtained. The AFM height and phase image were examined in order to find surface features and morphology of the thin films. Additionally to compare experimental results, structure optimization and vibrational spectra calculation of single TiOPc molecule were performed using DFT calculations. The received results showed that the parameters like polymorphic form, grain size, roughness of the surface in TiOPc thin films can well characterize the obtained organic thin films structures in terms of their use in optoelectronics and photovoltaics devices.

In-situ ellipsometry: applications to thin film research, development, and production

NASA Astrophysics Data System (ADS)

Kief, M. T.

1999-07-01

Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of thin film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable - insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

NASA Astrophysics Data System (ADS)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Thin film hydrogen sensor

DOEpatents

Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

1999-03-23

A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

Thin film hydrogen sensor

DOEpatents

Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

1999-01-01

A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

Carbon Nanotube Thin-Film Antennas.

PubMed

Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

2016-08-17

Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

Synthesis and characterization of spin-coated ZnS thin films

NASA Astrophysics Data System (ADS)

Zaman, M. Burhanuz; Chandel, Tarun; Dehury, Kshetramohan; Rajaram, P.

2018-05-01

In this paper, we report synthesis of ZnS thin films using a sol-gel method. A unique aprotic solvent, dimethlysulphoxide (DMSO) has been used to obtain a homogeneous ZnS gel. Zinc acetate and thiourea were used as the precursor sources for Zn and S, respectively, to deposit nanocrystalline ZnS thin films. Optical, structural and morphological properties of the films were studied. Optical studies reveal high transmittance of the samples over the entire visible region. The energy band gap (Eg) for the ZnS thin films is found to be about 3.6 eV which matches with that of bulk ZnS. The interference fringes in transmissions spectrum show the high quality of synthesized samples. Strong photoluminescence peak in the UV region makes the films suitable for optoelectronic applications. X-ray diffraction studies reveal that sol-gel derived ZnS thin films are polycrystalline in nature with hexagonal structure. SEM studies confirmed that the ZnS films show smooth and uniform grains morphology having size in 20-25 nm range. The EDAX studies confirmed that the films are nearly stoichiometric.

GaAs thin films and methods of making and using the same

DOEpatents

Boettcher, Shannon; Ritenour, Andrew; Boucher, Jason; Greenaway, Ann

2016-06-14

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

Morphology selection for cupric oxide thin films by electrodeposition.

PubMed

Dhanasekaran, V; Mahalingam, T; Chandramohan, R

2011-10-01

Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

In-situ ellipsometry: applications to thin film research, development, and production

NASA Astrophysics Data System (ADS)

Kief, Mark T.

1999-07-01

Many industries including the optics industry, semiconductor industry, and magnetic storage industry are deeply rooted in the science and technology of the film materials and thin film based devices. Research in novel thin film systems and the engineering of artificial structures increasingly requires a control on the atomic scale in both thickness and lateral order. Development of the deposition and fabrication processes for these thin film structures requires technical sophistication and efficiency combined with an understanding of the multi-faceted process interactions. The production of these materials necessitates a remarkable degree of control to minimize scrap and assure good performance. Furthermore, in today's industry these operations must occur at an ever accelerating pace. In this article, we will review one technique which can make these challenges more tractable-- insitu ellipsometry. This is a very powerful tool which is capable of characterizing thin film processes in real-time. We review the art and illustrate with novel applications to metal thin film growth. In addition, we will illustrate how information obtained with insitu ellipsometry can predict the end use thin film properties such as the transport properties. In conclusion, further advances in insitu ellipsometry and its applications will be discussed in terms of needs and trends as a tool for thin film research, development and production.

The Characterization of Thin Film Nickel Titanium Shape Memory Alloys

NASA Astrophysics Data System (ADS)

Harris Odum, Nicole Latrice

Shape memory alloys (SMA) are able to recover their original shape through the appropriate heat or stress exposure after enduring mechanical deformation at a low temperature. Numerous alloy systems have been discovered which produce this unique feature like TiNb, AgCd, NiAl, NiTi, and CuZnAl. Since their discovery, bulk scale SMAs have undergone extensive material property investigations and are employed in real world applications. However, its thin film counterparts have been modestly investigated and applied. Researchers have introduced numerous theoretical microelectromechanical system (MEMS) devices; yet, the research community's overall unfamiliarity with the thin film properties has delayed growth in this area. In addition, it has been difficult to outline efficient thin film processing techniques. In this dissertation, NiTi thin film processing and characterization techniques will be outlined and discussed. NiTi thin films---1 mum thick---were produced using sputter deposition techniques. Substrate bound thin films were deposited to analysis the surface using Scanning Electron Microscopy; the film composition was obtained using Energy Dispersive Spectroscopy; the phases were identified using X-ray diffraction; and the transformation temperatures acquired using resistivity testing. Microfabrication processing and sputter deposition were employed to develop tensile membranes for membrane deflection experimentation to gain insight on the mechanical properties of the thin films. The incorporation of these findings will aid in the movement of SMA microactuation devices from theory to fruition and greatly benefit industries such as medicinal and aeronautical.

Film and membrane-model thermodynamics of free thin liquid films.

PubMed

Radke, C J

2015-07-01

In spite of over 7 decades of effort, the thermodynamics of thin free liquid films (as in emulsions and foams) lacks clarity. Following a brief review of the meaning and measurement of thin-film forces (i.e., conjoining/disjoining pressures), we offer a consistent analysis of thin-film thermodynamics. By carefully defining film reversible work, two distinct thermodynamic formalisms emerge: a film model with two zero-volume membranes each of film tension γ(f) and a membrane model with a single zero-volume membrane of membrane tension 2γ(m). In both models, detailed thermodynamic analysis gives rise to thin-film Gibbs adsorption equations that allow calculation of film and membrane tensions from measurements of disjoining-pressure isotherms. A modified Young-Laplace equation arises in the film model to calculate film-thickness profiles from the film center to the surrounding bulk meniscus. No corresponding relation exists in the membrane model. Illustrative calculations of disjoining-pressure isotherms for water are presented using square-gradient theory. We report considerable deviations from Hamaker theory for films less than about 3 nm in thickness. Such thin films are considerably more attractive than in classical Hamaker theory. Available molecular simulations reinforce this finding. Copyright © 2014 Elsevier Inc. All rights reserved.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Oxygen Reduction Reaction Activity of Platinum Thin Films with Different Densities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ergul, Busra; Begum, Mahbuba; Kariuki, Nancy

Platinum thin films with different densities were grown on glassy carbon electrodes by high pressure sputtering deposition and evaluated as oxygen reduction reaction catalysts for polymer electrolyte fuel cells using cyclic voltammetry and rotating disk electrode techniques in aqueous perchloric acid electrolyte. The electrochemically active surface area, ORR mass activity (MA) and specific activity (SA) of the thin film electrodes were obtained. MA and SA were found to be higher for low-density films than for high-density film.

Thin-film metal hydrides.

PubMed

Remhof, Arndt; Borgschulte, Andreas

2008-12-01

The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

Fabrication of DC inorganic electroluminescent thin-film devices with novel n-p-n type structure

NASA Astrophysics Data System (ADS)

Ishimura, Takuyoshi; Matsumoto, Hironaga

2014-04-01

Inorganic electroluminescent (iEL) thin films are used in light-emitting devices and are functional under alternating current conditions only. Stable luminescent light has yet to be obtained under direct current conditions. We postulated that thin-film iEL light emission occurs when an injected electron occupies the excited state of a luminescent center and then recombines radiatively. From this perspective, we fabricated a novel stacked n-p-n type thin-film iEL device composed of indium tin oxide (ITO)-ZnO-CuAlO2-ZnS-ZnS:TbF3-Al thin films and obtained stable luminescence using a low-voltage DC power supply. The overall luminescent color of the device depended on only the dopant in the luminescent layer, not the band gap or thin-film material.

New organic semiconductor thin film derived from p-toluidine monomer

NASA Astrophysics Data System (ADS)

Al-Hossainy, A. F.; Zoromba, M. Sh

2018-03-01

p-Toluidine was used as a precursor to synthesize new organic compound [(E)-4-methyl-N1-((E)-4-methyl-6-(p-tolylimino) cyclohex-3-en-1-ylidene)-N2-(p-tolyl) benzene-1,2-diamine] (MBD) by oxidative reaction via potassium dichromate as oxidizing agent at room temperature. Spin coater was used to fabricate nano-size crystalline thin film of the MBD with thickness 73 nm. The characterizations of the MBD powder and thin film have been described by various techniques including Fourier Transform Infrared (FT-IR), Mass Spectra, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), UV-Visible measurements and Atomic Force Microscope (AFM). The results revealed that the MBD as an organic material is semi-crystalline containing benzenoid (Bensbnd Nsbnd Ben) and quinonoid (Quin = N = Quin) structures. Various optical constants such as refractive index (n), and the absorption index, (k) of the MBD thin film were determined. The effect of temperature on the electrical resistivity of MBD film was studied by a Keithley 6517B electrometer. The energy band gap value of the MBD thin film was found to be 2.24 eV. Thus, MBD is located in the semiconductor materials range. In addition, structural and optical mechanisms of MBD nanostructured thin film were investigated. The obtained results illustrate the possibility of controlling the organic semiconductor MBD thin film for the optoelectronic applications.

Temperature Behavior of Thin Film Varactor

DTIC Science & Technology

2012-01-01

Temperature Behavior of Thin Film Varactor By Richard X. Fu ARL-TR-5905 January 2012...Thin Film Varactor Richard X. Fu Sensors and Electron Devices Directorate, ARL...DD-MM-YYYY) January 2012 2. REPORT TYPE Final 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Temperature Behavior of Thin Film Varactor 5a

Self-Limited Growth in Pentacene Thin Films

PubMed Central

2017-01-01

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought. PMID:28287698

Self-Limited Growth in Pentacene Thin Films.

PubMed

Pachmajer, Stefan; Jones, Andrew O F; Truger, Magdalena; Röthel, Christian; Salzmann, Ingo; Werzer, Oliver; Resel, Roland

2017-04-05

Pentacene is one of the most studied organic semiconducting materials. While many aspects of the film formation have already been identified in very thin films, this study provides new insight into the transition from the metastable thin-film phase to bulk phase polymorphs. This study focuses on the growth behavior of pentacene within thin films as a function of film thickness ranging from 20 to 300 nm. By employing various X-ray diffraction methods, combined with supporting atomic force microscopy investigations, one crystalline orientation for the thin-film phase is observed, while three differently tilted bulk phase orientations are found. First, bulk phase crystallites grow with their 00L planes parallel to the substrate surface; second, however, crystallites tilted by 0.75° with respect to the substrate are found, which clearly dominate the former in ratio; third, a different bulk phase polymorph with crystallites tilted by 21° is found. The transition from the thin-film phase to the bulk phase is rationalized by the nucleation of the latter at crystal facets of the thin-film-phase crystallites. This leads to a self-limiting growth of the thin-film phase and explains the thickness-dependent phase behavior observed in pentacene thin films, showing that a large amount of material is present in the bulk phase much earlier during the film growth than previously thought.

Metallic Thin-Film Bonding and Alloy Generation

NASA Technical Reports Server (NTRS)

Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

2016-01-01

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Berkovich Nanoindentation on AlN Thin Films

PubMed Central

2010-01-01

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm−3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices. PMID:20672096

Berkovich Nanoindentation on AlN Thin Films.

PubMed

Jian, Sheng-Rui; Chen, Guo-Ju; Lin, Ting-Chun

2010-03-31

Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD) derived Si-doped (2 × 1017 cm-3) GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB) milling to accurately position the cross-section of the nanoindented area. The hardness and Young's modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The obtained values of the hardness and Young's modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

Microwave response of high transition temperature superconducting thin films

NASA Technical Reports Server (NTRS)

Miranda, Felix Antonio

1991-01-01

We have studied the microwave response of YBa2Cu3O(7 - delta), Bi-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O high transition temperature superconducting (HTS) thin films by performing power transmission measurements. These measurements were carried out in the temperature range of 300 K to 20 K and at frequencies within the range of 30 to 40 GHz. Through these measurements we have determined the magnetic penetration depth (lambda), the complex conductivity (sigma(sup *) = sigma(sub 1) - j sigma(sub 2)) and the surface resistance (R(sub s)). An estimate of the intrinsic penetration depth (lambda approx. 121 nm) for the YBa2Cu3O(7 - delta) HTS has been obtained from the film thickness dependence of lambda. This value compares favorably with the best values reported so far (approx. 140 nm) in single crystals and high quality c-axis oriented thin films. Furthermore, it was observed that our technique is sensitive to the intrinsic anisotropy of lambda in this superconductor. Values of lambda are also reported for Bi-based and Tl-based thin films. We observed that for the three types of superconductors, both sigma(sub 1) and sigma(sub 2) increased when cooling the films below their transition temperature. The measured R(sub s) are in good agreement with other R(sub S) values obtained using resonant activity techniques if we assume a quadratic frequency dependence. Our analysis shows that, of the three types of HTS films studied, the YBa2Cu3O(7 - delta) thin film, deposited by laser ablation and off-axis magnetron sputtering are the most promising for microwave applications.

Photoactive lead oxide thin films by spray pyrolysis

NASA Astrophysics Data System (ADS)

Bhagat, Dharini; Waldiya, Manmohansingh; Mukhopadhyay, Indrajit

2018-05-01

We report the synthesis of photoactive lead monoxide thin films on fluorine doped tin oxide substrate by cost effective spray pyrolysis technique using aqueous solution of lead acetate trihydrate. Influence of substrate temperature on the structural and optical properties of thin films was studied. Polymorph of lead monoxide, litharge (α-PbO), was obtained when the substrate temperature was kept constant at 360 °C. XRD analysis revealed that the deposits were tetragonal structured with preferred orientation along 002 plane. Band gap value was found to be 1.93ev from diffuse reflectance spectra.

Printable CIGS thin film solar cells

NASA Astrophysics Data System (ADS)

Fan, Xiaojuan

2014-03-01

Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

Magnetic hysteresis measurements of thin films under isotropic stress.

NASA Astrophysics Data System (ADS)

Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

2000-10-01

Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.

Superconductor—Insulator Transitions in Pure Polycrystalline Nb Thin Films

NASA Astrophysics Data System (ADS)

Couedo, F.; Crauste, O.; Bergé, L.; Dolgorouky, Y.; Marrache-Kikuchi, C.; Dumoulin, L.

2012-12-01

We report on a study of the transport properties of Nb thin films. By varying the thickness of the films from 263 Å to 25 Å, we observed a depression of the superconductivity. Magnetic field was also applied up to 6 T, inducing the disappearance of the superconductivity and the onset of an insulating behavior. The results were compared to those we have already obtained on a highly disordered system, a-NbxSi1-x, to understand whether the same mechanisms for the disappearance of the superconductivity could be at play in pure metallic thin films and in highly disordered systems.

Thin film temperature sensor

NASA Technical Reports Server (NTRS)

Grant, H. P.; Przybyszewski, J. S.

1980-01-01

Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

Growth and Structure of High-Temperature Superconducting Thin Films

NASA Astrophysics Data System (ADS)

Achutharaman, Vedapuram Sankar

High temperature superconducting thin films with atomic scale perfection are required for technological applications and scientific studies on the mechanism of superconductivity. Ozone assisted molecular beam epitaxy (MBE) has been shown to produce in-situ superconducting thin films. To obtain a well-controlled and reproducible process, some components such as the substrate heater and the substrate holder have to be designed to be compatible with high oxygen partial pressures. Also, to ensure precise stoichiometry and precipitate-free films, evaporation sources and temperature controllers have to be designed for better temperature stability. The investigation of the MBE process and the thin films grown by MBE are required to obtain a better understanding of the growth parameters such as the composition of the film, substrate surface structure, substrate temperature and ozone partial pressure. This can be obtained by dynamically monitoring the growth process by in-situ characterization techniques such as reflection high energy electron diffraction (RHEED). Intensity oscillations of the specular RHEED beam have been observed during the growth of RBa_2Cu_3 O_7 (R = Y,Dy) films on SrTiO _3. A model for the origin of these RHEED intensity oscillations will be proposed from extensive RHEED intensity studies. A mechanism for growth of these oxides by physical vapor deposition techniques such as MBE and pulsed laser deposition will also be developed. To verify both the models, the growth of the superconductors will be simulated by the Monte Carlo method and compared with experimental RHEED observations.

Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Sainju, Deepak

Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

NASA Technical Reports Server (NTRS)

Cui, G.; Beetz, C. P., Jr.; Boerstler, R.; Steinbeck, J.

1993-01-01

Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

Structural and optical properties of ITO and Cu doped ITO thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Analysis of Hard Thin Film Coating

NASA Technical Reports Server (NTRS)

Shen, Dashen

1998-01-01

Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Analysis of Hard Thin Film Coating

NASA Technical Reports Server (NTRS)

Shen, Dashen

1998-01-01

MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Antimony sulfide thin films prepared by laser assisted chemical bath deposition

NASA Astrophysics Data System (ADS)

Shaji, S.; Garcia, L. V.; Loredo, S. L.; Krishnan, B.; Aguilar Martinez, J. A.; Das Roy, T. K.; Avellaneda, D. A.

2017-01-01

Antimony sulfide (Sb2S3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb2S3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb2S3 thin films for optoelectronic applications.

Nanocrystal thin film fabrication methods and apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Thin-film rechargeable lithium batteries

NASA Astrophysics Data System (ADS)

Dudney, N. J.; Bates, J. B.; Lubben, D.

1994-11-01

Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxynitride electrolyte, Li metal anode, and Li(1-x)Mn2O4 as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100 C or by enhancing the lithium ion transport rate in the cathode material.

Thin film-coated polymer webs

DOEpatents

Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

1992-02-04

The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

Thin film solar cell workshop

NASA Technical Reports Server (NTRS)

Armstrong, Joe; Jeffrey, Frank

1993-01-01

A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Silicon surface passivation by polystyrenesulfonate thin films

NASA Astrophysics Data System (ADS)

Chen, Jianhui; Shen, Yanjiao; Guo, Jianxin; Chen, Bingbing; Fan, Jiandong; Li, Feng; Liu, Haixu; Xu, Ying; Mai, Yaohua

2017-02-01

The use of polystyrenesulfonate (PSS) thin films in a high-quality passivation scheme involving the suppression of minority carrier recombination at the silicon surface is presented. PSS has been used as a dispersant for aqueous poly-3,4-ethylenedioxythiophene. In this work, PSS is coated as a form of thin film on a Si surface. A millisecond level minority carrier lifetime on a high resistivity Si wafer is obtained. The film thickness, oxygen content, and relative humidity are found to be important factors affecting the passivation quality. While applied to low resistivity silicon wafers, which are widely used for photovoltaic cell fabrication, this scheme yields relatively shorter lifetime, for example, 2.40 ms on n-type and 2.05 ms on p-type wafers with a resistivity of 1-5 Ω.cm. However, these lifetimes are still high enough to obtain high implied open circuit voltages (Voc) of 708 mV and 697 mV for n-type and p-type wafers, respectively. The formation of oxides at the PSS/Si interface is suggested to be responsible for the passivation mechanism.

Exchange Stiffness in Thin-Film Cobalt Alloys

NASA Astrophysics Data System (ADS)

Eyrich, Charles

The exchange stiffness, Aex, is one of the key parameters controlling magnetization reversal in magnetic materials but is very difficult to measure, especially in thin films. We developed a new technique for measuring the exchange stiffness of a magnetic material based on the formation of a spin spiral within two antiferromagnetically coupled ferromagnetic films [1]. Using this method, I was able to measure the exchange stiffness of thin film Co alloyed with Cr, Fe, Ni, Pd, Pt and Ru. The results of this work showed that the rate at which a substituent element reduces the exchange stiffness is not directly related to its effect on the magnetization of the alloy. These measured trends have been understood by combining measurements of element specific magnetic moments obtained using X-ray magnetic circular dichroism (XMCD) and material specific modeling based on density functional theory (DFT) within the local density approximation (LDA). The experimental results also hint at significant reduction of the exchange stiffness at the interface that can account for the difference between our results and those obtained on bulk materials.

A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

PubMed

Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

2017-06-01

A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Feasibility demonstration for electroplating ultra-thin polyimide film. [fabricating film for space erectable structures

NASA Technical Reports Server (NTRS)

Schneier, R.; Braswell, T. V.; Vaughn, R. W.

1978-01-01

The effect of electrodeposition variables on film thickness was investigated using a dilute polyimide solution as a bath into which aluminum (as foil or as a vapor deposited coating) was immersed. The electrodeposited film was dried for 2 hours at 93 C (primarily to remove solvent) and cured for 18 hours at 186 C. Infrared studies indicate that imide formation (curing) occurs at 149 C under vacuum. From a conceptual viewpoint, satisfactory film metallized on one side can be obtained by this method. The cured ultra thin polyimide film exhibits properties equivalent to those of commercial film, and the surface appearance of the strippable polyimide film compares favorably with that of a sample of commercial film of thicker gauge. The feasibility of manufacturing approximately one million sq m of ultra thin film capable of being joined to fabricate an 800 m by 9 800 m square from starting material 0.5 to 1 m wide for space erectable structures was demonstrated.

Optical and structural properties of indium doped bismuth selenide thin films

NASA Astrophysics Data System (ADS)

Pavagadhi, Himanshu; Vyas, S. M.; Patel, Piyush; Patel, Vimal; Patel, Jaydev; Jani, M. P.

2015-08-01

In: Bi2Se3 crystals were grown by Bridgman method at a growth velocity of 0.5cm/h with temperature gradient of 650 C/cm in our laboratory. The thin films of In:Bi2se3 were grown on amorphous substrate (glass) at a room temperature under a pressure of 10-4Pa by thermal evaporation technique. Thin film were deposited at various thicknesses and optical absorption spectrum of such thin films, obtain in wave no. range 300 to 2600 cm-1. The optical energy gap calculated from this data were found to be inverse function of square of thickness, particularly for thickness about 1800 Å or less. This dependence is explained in terms of quantum size effect. For thicker films, the bandgap is found to be independent of film thickness. For the surface stud of the as grown thin film by using AFM, which shows continuous film with some step height and surface roughness found in terms of few nm and particle size varies with respect to thickness.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

1995-01-01

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

Elastic properties of single-walled carbon nanotube thin film by nanoindentation test.

PubMed

Tang, Xingling; El-Hami, Abdelkhalak; El-Hami, Khalil; Eid, Mohamed; Si, Chaorun

2017-09-12

This paper carries out a preliminary study for the elastic properties of single walled carbon nanotube (SWCNT) thin film. The SWCNT thin films (~250 nm) are prepared by a simple and cost effective method of spin-coating technology. Nanoindentation test with a Berkovich indenter is used to determine the hardness and elastic modulus of the SWCNT thin film. It is important to note that the elastic properties of SWCNT film are indirectly derived from the information of load and displacement of the indenter under certain assumptions, deviation of the 'test value' is inevitable. In this regard, uncertainty analysis is an effective process in guarantying the validity of the material properties. This paper carries out uncertainty estimation for the tested elastic properties of SWCNT film by nanoindentation. Experimental results and uncertainty analysis indicates that nanoindentation test could be an effective and reliable method in determine the elastic properties of SWCNT thin film. Moreover, the obtained values of hardness and elastic modulus can further benefit the design of SWCNT thin film based components.

Plasmonic properties of gold nanoparticles covered by silicon suboxide thin film

NASA Astrophysics Data System (ADS)

Baranov, Evgeniy; Zamchiy, Alexandr; Safonov, Aleksey; Starinskiy, Sergey; Khmel, Sergey

2017-10-01

The optical properties of nanocomposite material consisting of gold nanoparticles without/with silicon suboxide thin film were obtained. The gold film was deposited by thermal vacuum evaporation and then it was annealed in a vacuum chamber to form gold nanoparticles. The silicon suboxide thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method. The intensity of the localized surface plasmon resonance increased and the plasmon maximum peak shifted from 520 nm to 537 nm.

Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

NASA Astrophysics Data System (ADS)

Thanawala, Sachin

Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

Buckling of a stiff thin film on an elastic graded compliant substrate.

PubMed

Chen, Zhou; Chen, Weiqiu; Song, Jizhou

2017-12-01

The buckling of a stiff film on a compliant substrate has attracted much attention due to its wide applications such as thin-film metrology, surface patterning and stretchable electronics. An analytical model is established for the buckling of a stiff thin film on a semi-infinite elastic graded compliant substrate subjected to in-plane compression. The critical compressive strain and buckling wavelength for the sinusoidal mode are obtained analytically for the case with the substrate modulus decaying exponentially. The rigorous finite element analysis (FEA) is performed to validate the analytical model and investigate the postbuckling behaviour of the system. The critical buckling strain for the period-doubling mode is obtained numerically. The influences of various material parameters on the results are investigated. These results are helpful to provide physical insights on the buckling of elastic graded substrate-supported thin film.

Buckling of a stiff thin film on an elastic graded compliant substrate

NASA Astrophysics Data System (ADS)

Chen, Zhou; Chen, Weiqiu; Song, Jizhou

2017-12-01

The buckling of a stiff film on a compliant substrate has attracted much attention due to its wide applications such as thin-film metrology, surface patterning and stretchable electronics. An analytical model is established for the buckling of a stiff thin film on a semi-infinite elastic graded compliant substrate subjected to in-plane compression. The critical compressive strain and buckling wavelength for the sinusoidal mode are obtained analytically for the case with the substrate modulus decaying exponentially. The rigorous finite element analysis (FEA) is performed to validate the analytical model and investigate the postbuckling behaviour of the system. The critical buckling strain for the period-doubling mode is obtained numerically. The influences of various material parameters on the results are investigated. These results are helpful to provide physical insights on the buckling of elastic graded substrate-supported thin film.

Impact of nanostructured thin ZnO film in ultraviolet protection.

PubMed

Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

2017-01-01

Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field.

Application of Thin-Film Thermocouples to Localized Heat Transfer Measurements

NASA Technical Reports Server (NTRS)

Lepicovsky, J.; Bruckner, R. J.; Smith, F. A.

1995-01-01

The paper describes a proof-of-concept experiment on thin-film thermocouples used for localized heat transfer measurements applicable to experiments on hot parts of turbine engines. The paper has three main parts. The first part describes the thin-film sensors and manufacturing procedures. Attention is paid to connections between thin-film thermocouples and lead wires, which has been a source of problems in the past. The second part addresses the test arrangement and facility used for the heat transfer measurements modeling the conditions for upcoming warm turbine tests at NASA LeRC. The paper stresses the advantages of a modular approach to the test rig design. Finally, we present the results of bulk and local heat flow rate measurements, as well as overall heat transfer coefficients obtained from measurements in a narrow passage with an aspect ratio of 11.8. The comparison of bulk and local heat flow rates confirms applicability of thin-film thermocouples to upcoming warm turbine tests.

Permanent laser conditioning of thin film optical materials

DOEpatents

Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

1995-12-05

The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

Iron doped LiCoPO4 thin films for lithium-ion microbatteries obtained by ns pulsed laser deposition

NASA Astrophysics Data System (ADS)

Smaldone, A.; Brutti, S.; De Bonis, A.; Ciarfaglia, N.; Santagata, A.; Teghil, R.

2018-07-01

Well crystallized and homogeneous iron doped LiCoPO4 (LCfP) thin films have been grown by ns Pulsed Laser Ablation, at ambient temperature without any substrate heating or post-annealing treatments. The films have been deposited in vacuum and in the presence of buffer gases (O2, Ar) and it has been found that their crystallinity, structure and morphology depend on pressure conditions. The films have been studied by Scanning Electron Microscopy and X Ray Diffraction, while their first steps of growth have been characterized by Transmission Electron Microscopy. A study of the plasma produced by the laser ablation in the different pressure conditions has been carried out with the aim of elucidate the mechanisms involved in the films deposition. LCfP thin films have been also tested as microelectrodes in lithium cells in galvanostatic condition for analyzing the reversibility of the lithium-ion battery.

Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S.

Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3},more » while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.« less

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

Science.gov Websites

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the National Laboratory developed low-cost transparent encapsulation schemes for CIGS cells that reduced power

Superparamagnetic behavior of Fe70Dy30 granular thin film

NASA Astrophysics Data System (ADS)

Mekala, Laxman; Muhammed Shameem P., V.; Kumar, M. Senthil

2018-04-01

In the present study, the structural and magnetic properties of the Fe70Dy30 thin films are investigated. The Fe70Dy30 thin film with a thickness of 250 Å is fabricated using a dc magnetron sputtering system. Structural and temperature dependent magnetic properties indicate the granular nature of the film. The nonsaturation of the magnetization curves even at high fields of 50 kOe and the obtained very low coercivity in the temperature range 50 - 300 K reveal that films are superparamagnetic (SPM). The decreasing blocking temperature (Tb) with increasing an external magnetic field in temperature dependent magnetization curves are exposed qualitatively.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Multifunctional thin film surface

DOEpatents

Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

2015-10-13

A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

Thin film tritium dosimetry

DOEpatents

Moran, Paul R.

1976-01-01

The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

A flammability study of thin plastic film materials

NASA Technical Reports Server (NTRS)

Skinner, S. Ballou

1990-01-01

The Materials Science Laboratory at the Kennedy Space Center presently conducts flammability tests on thin plastic film materials by using a small needle rake method. Flammability data from twenty-two thin plastic film materials were obtained and cross-checked by using three different testing methods: (1) the presently used small needle rake; (2) the newly developed large needle rake; and (3) the previously used frame. In order to better discern the melting-burning phenomenon of thin plastic film material, five additional specific experiments were performed. These experiments determined the following: (1) the heat sink effect of each testing method; (2) the effect of the burn angle on the burn length or melting/shrinkage length; (3) the temperature profile above the ignition source; (4) the melting point and the fire point of each material; and (5) the melting/burning profile of each material via infrared (IR) imaging. The results of these experimentations are presented.

Thermo-optically tunable thin film devices

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.

2003-10-01

We report advances in tunable thin film technology and demonstration of multi-cavity tunable filters. Thin film interference coatings are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable components based on the properties of semiconductor thin films with large thermo-optic coefficients. The technology is based on amorphous silicon deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable thin films can be constructed in sophisticated multi-cavity, multi-layer optical designs.

Growth Mechanism of Cluster-Assembled Surfaces: From Submonolayer to Thin-Film Regime

NASA Astrophysics Data System (ADS)

Borghi, Francesca; Podestà, Alessandro; Piazzoni, Claudio; Milani, Paolo

2018-04-01

Nanostructured films obtained by assembling preformed atomic clusters are of strategic importance for a wide variety of applications. The deposition of clusters produced in the gas phase onto a substrate offers the possibility to control and engineer the structural and functional properties of the cluster-assembled films. To date, the microscopic mechanisms underlying the growth and structuring of cluster-assembled films are poorly understood, and, in particular, the transition from the submonolayer to the thin-film regime is experimentally unexplored. Here we report the systematic characterization by atomic force microscopy of the evolution of the structural properties of cluster-assembled films deposited by supersonic cluster beam deposition. As a paradigm of nanostructured systems, we focus our attention on cluster-assembled zirconia films, investigating the influence of the building block dimensions on the growth mechanisms and roughening of the thin films, following the growth process from the early stages of the submonolayer to the thin-film regime. Our results demonstrate that the growth dynamics in the submonolayer regime determines different morphological properties of the cluster-assembled thin film. The evolution of the roughness with the number of deposited clusters reproduces the growth exponent of the ballistic deposition in the 2 +1 model from the submonolayer to the thin-film regime.

Hybridization effects on wave packet dynamics in topological insulator thin films.

PubMed

Yar, Abdullah; Naeem, Muhammad; Khan, Safi Ullah; Sabeeh, Kashif

2017-11-22

Theoretical study of electron wave packet dynamics in topological insulator (TI) thin films is presented. We have investigated real space trajectories and spin dynamics of electron wave packets in TI thin films. Our focus is on the role of hybridization between the electronic states of the two surfaces. This allows us to access the crossover regime of a thick film with no hybridization to a thin film with finite hybridization. We show that the electron wave packet undergoes side-jump motion in addition to zitterbewegung. The oscillation frequency of zitterbewegung can be tuned by the strength of hybridization, which in turn can be tuned by the thickness of the film. We find that the spin expectations also exhibit zitterbewegung tunable by hybridization. We also show that it is possible to obtain persistent zitterbewegung, oscillations which do not decay, in both the real space trajectories as well as spin dynamics. The zitterbewegung oscillation frequency in TI thin films falls in a parameter regime where it might be possible to observe these effects using present day experimental techniques.

Thin film ion conducting coating

DOEpatents

Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

1989-01-01

Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

Temperature dependence of LRE-HRE-TM thin films

NASA Astrophysics Data System (ADS)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Method of producing amorphous thin films

DOEpatents

Brusasco, Raymond M.

1992-01-01

Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

Method of producing amorphous thin films

DOEpatents

Brusasco, R.M.

1992-09-01

Disclosed is a method of producing thin films by sintering which comprises: (a) coating a substrate with a thin film of an inorganic glass forming material possessing the capability of being sintered; and (b) irradiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed. 4 figs.

Interference effects in the sum frequency generation spectra of thin organic films. II: Applications to different thin-film systems.

PubMed

Tong, Yujin; Zhao, Yanbao; Li, Na; Ma, Yunsheng; Osawa, Masatoshi; Davies, Paul B; Ye, Shen

2010-07-21

In this paper, the results of the modeling calculations carried out for predicting the interference effects expected in the sum frequency generation (SFG) spectra of a specific thin-layer system, described in the accompanying paper, are tested by comparing them with the experimental spectra obtained for a real thin-layer film comprising an organic monolayer/variable thickness dielectric layer/gold substrate. In this system, two contributions to the SFG spectra arise, a resonant contribution from the organic film and a nonresonant contribution from the gold substrate. The modeling calculations are in excellent agreement with the experimental spectra over a wide range of thicknesses and for different polarization combinations. The introduction of another resonant monolayer adjacent to the gold substrate and with the molecules having a reverse orientation has a significant affect on the spectral shapes which is predicted. If a dielectric substrate such as CaF(2) is used instead of a gold substrate, only the spectral intensities vary with the film thickness but not the spectral shapes. The counterpropagating beam geometry will change both the thickness dependent spectral shapes and the intensity of different vibrational modes in comparison with a copropagating geometry. The influences of these experimental factors, i.e., the molecular orientational structure in the thin film, the nature of the substrate, and the selected incident beam geometry, on the experimental SFG spectra are quantitatively predicted by the calculations. The thickness effects on the signals from a SFG active monolayer contained in a thin liquid-layer cell of the type frequently used for in situ electrochemical measurements is also discussed. The modeling calculation is also valid for application to other thin-film systems comprising more than two resonant SFG active interfaces by appropriate choice of optical geometries and relevant optical properties.

YSZ thin films with minimized grain boundary resistivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mills, Edmund M.; Kleine-Boymann, Matthias; Janek, Juergen

2016-03-31

In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e. g. strain-induced mobility changes) at the heterophase boundary with the substrate. Still largely unexplored is the possibility of manipulation of grain boundary resistivity in polycrystalline solid electrolyte films, clearly a limiting factor in their ionic conductivity. Here we report that the ionic conductivity ofmore » yttria stabilized zirconia thin films with nano-­ columnar grains grown on a MgO substrate nearly reaches that of the corresponding single crystal when the thickness of the films becomes less than roughly 8 nm (smaller by a factor of three at 500°C). Using impedance spectroscopy, the grain boundary resistivity was probed as a function of film thickness. The resistivity of the grain boundaries near the film- substrate interface and film surface (within 4 nm of each) was almost entirely eliminated. This minimization of grain boundary resistivity is attributed to Mg2+ diffusion from the MgO substrate into the YSZ grain boundaries, which is supported by time of flight secondary ion mass spectroscopy measurements. We suggest grain boundary “design” as an attractive method to obtain highly conductive solid electrolyte thin films.« less

Effects of an Inhomogenous Electric Field on an Evaporating Thin Film in a Microchannel

NASA Astrophysics Data System (ADS)

Liu, Xiuliang; Hu, Chen; Li, Huafeng; Yu, Fei; Kong, Xiaming

2018-03-01

In this paper, heat transfer enhancement in an evaporating thin film along the wall of a microchannel under an imposed inhomogenous electrostatic field is analyzed. The mathematical model, based on the augmented Young-Laplace equation with the inhomogenous electrostatic field taken into consideration, is developed. The 2D inhomogenous electric field with the curved liquid-vapor interface is solved by the lattice Boltzmann method. Numerical solutions for the thin film characteristics are obtained for both constant wall temperature and uniform wall heat flux boundary conditions. The numerical results show that the liquid film becomes thinner and the heat transfer coefficient increases under an imposed electric field. Both of octane and water are chosen as the working mediums, and similar result about the enhancement of heat transfer on evaporating thin film by imposing electric field is obtained. It is found that applying an electric field on the evaporating thin film can enhance evaporative heat transfer in a microchannel.

Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Cibert, C.; Tétard, F.; Djemia, P.; Champeaux, C.; Catherinot, A.; Tétard, D.

2004-10-01

AlN thin films have been deposited on Si(100) substrates by a pulsed laser deposition method. The deposition parameters (pressure, temperature, purity of target) play an important role in the mechanical and physicochemical properties. The films have been characterized using X-ray diffraction, atomic force microscopy, Brillouin light scattering, Fourier transform infrared spectroscopy and wettability testing. With a high purity target of AlN and a temperature deposition of 750 ∘C, the measured Rayleigh wave velocity is close to the one previously determined for AlN films grown at high temperature by metal-organic chemical vapour deposition. Growth of nanocrystalline AlN at low temperature and of AlN film with good crystallinity for samples deposited at higher temperature is confirmed by infrared spectroscopy, as it was by atomic force microscopy, in agreement with X-ray diffraction results. A high hydrophobicity has been measured with zero polar contribution for the surface energy. These results confirm that films made by pulsed laser deposition of pure AlN at relatively low temperature have good prospects for microelectromechanical systems applications.

Barium ferrite thin-film recording media

NASA Astrophysics Data System (ADS)

Sui, Xiaoyu; Scherge, Matthias; Kryder, Mark H.; Snyder, John E.; Harris, Vincent G.; Koon, Norman C.

1996-03-01

Both longitudinal and perpendicular barium ferrite thin films are being pursued as overcoatless magnetic recording media. In this paper, prior research on thin-film Ba ferrite is reviewed and the most recent results are presented. Self-textured high-coercivity longitudinal Ba ferrite thin films have been achieved using conventional rf diode sputtering. Microstructural studies show that c-axis in-plane oriented grains have a characteristic acicular shape, while c-axis perpendicularly oriented grains have a platelet shape. Extended X-ray absorption fine structure (EXAFS) measurements indicate that the crystal orientations are predetermined by the structural anisotropy in the as-sputtered 'amorphous' state. Recording tests on 1500 Oe coercivity longitudinal Ba ferrite disks show performance comparable with that of a 1900 Oe Co alloy disk. To further improve the recording performance, both grain size and aspect ratio need to be reduced. Initial tribological tests indicate high hardness of Ba ferrite thin films. However, surface roughness needs to be reduced. For future ultrahigh-density contact recording, it is believed that perpendicular recording may be used. A thin Pt underlayer has been found to be capable of producing Ba ferrite thin films with excellent c-axis perpendicular orientation.

Gas Permeation in Thin Glassy Polymer Films

NASA Astrophysics Data System (ADS)

Paul, Donald

2011-03-01

The development of asymmetric and composite membranes with very thin dense ``skins'' needed to achieve high gas fluxes enabled the commercial use of membranes for molecular level separations. It has been generally assumed that these thin skins, with thicknesses of the order of 100 nm, have the same permeation characteristics as films with thicknesses of 25 microns or more. Thick films are easily made in the laboratory and have been used extensively for measuring permeation characteristics to evaluate the potential of new polymers for membrane applications. There is now evidence that this assumption can be in very significant error, and use of thick film data to select membrane materials or predict performance should be done with caution. This presentation will summarize our work on preparing films of glassy polymers as thin as 20 nm and characterizing their behavior by gas permeation, ellipsometry and positron annihilation lifetime spectroscopy. Some of the most important polymers used commercially as gas separation membranes, i.e., Matrimid polyimide, polysulfone (PSF) and poly(2,6-dimethyl-1,4-phenylene oxide) (PPO), have been made into well-defined thin films in our laboratories by spin casting techniques and their properties studied using the techniques we have developed. These thin films densify (or physically age) much faster than thicker films, and, as result, the permeability decreases, sometimes by several-fold over weeks or months for thin films. This means that the properties of these thin films can be very different from bulk films. The techniques, interpretations and implications of these observations will be discussed. In a broader sense, gas permeation measurements can be a powerful way of developing a better understanding of the effects of polymer chain confinement and/or surface mobility on the behavior of thin films.

Terahertz study of hole transport in pentacene thin films

NASA Astrophysics Data System (ADS)

Engelbrecht, Stefan G.; Prinz, Markus; Arend, Thomas R.; Kersting, Roland

2014-10-01

Terahertz electromodulation spectroscopy is a novel tool for studying charge carrier transport in polycrys­talline thin films. The technique selectively probes the high-frequency response of mobile carriers and is insensitive to scattering at grain boundaries as well as to trapping processes. In thin films of pentacene we find a hole mobility of 21 cm2 /Vs, which exceeds the largest previously reported values obtained in poly­ crystalline pentacene. Additionally, the data provide an upper limit of the hole conductivity effective mass of mh ≍ 0.8 me.

Surface morphology of ultrathin graphene oxide films obtained by the SAW atomization

NASA Astrophysics Data System (ADS)

Balachova, Olga V.; Balashov, Sergey M.; Costa, Carlos A. R.; Pavani Filho, A.

2015-08-01

Lately, graphene oxide (GO) thin films have attracted much attention: they can be used as humidity-sensitive coatings in the surface acoustic wave (SAW) sensors; being functionalized, they can be used in optoelectronic or biodevices, etc. In this research we study surface morphology of small-area thin GO films obtained on Si and quartz substrates by deposition of very small amounts of H2O-GO aerosols produced by the SAW atomizer. An important feature of this method is the ability to work with submicrovolumes of liquids during deposition that provides relatively good control over the film thickness and quality, in particular, minimization of the coffee ring effect. The obtained films were examined using AFM and electron microscopy. Image analysis showed that the films consist of GO sheets of different geometry and sizes and may form discrete or continuous coatings at the surface of the substrates with the minimum thickness of 1.0-1.8 nm which corresponds to one or two monolayers of GO. The thickness and quality of the deposited films depend on the parameters of the SAW atomization (number of atomized droplets, a volume of the initial droplet, etc.) and on sample surface preparation (activation in oxygen plasma). We discuss the structure of the obtained films, uniformity and the surface coverage as a function of parameters of the film deposition process and sample preparation. Qualitative analysis of adhesion of GO films is made by rinsing the samples in DI water and subsequent evaluation of morphology of the remained films.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

PubMed Central

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

PubMed

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

Thermally stimulated nonlinear refraction in gelatin stabilized Cu-PVP nanocomposite thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tamgadge, Y. S., E-mail: ystamgadge@gmail.com; Atkare, D. V.; Pahurkar, V. G.

2016-05-06

This article illustrates investigations on thermally stimulated third order nonlinear refraction of Cu-PVP nanocomposite thin films. Cu nanoparticles have been synthesized using chemical reduction method and thin films in PVP matrix have been obtained using spin coating technique. Thin films have been characterized by X-ray diffraction (XRD) and Ultraviolet-visible (UV-vis) spectroscopyfor structural and linear optical studies. Third order nonlinear refraction studies have been performed using closed aperture z-scan technique under continuous wave (CW) He-Ne laser. Cu-PVP nanocomposites are found to exhibit strong nonlinear refractive index stimulated by thermal lensing effect.

Optoelectronic properties and Seebeck coefficient in SnSe thin films

NASA Astrophysics Data System (ADS)

Urmila, K. S.; Namitha, T. A.; Rajani, J.; Philip, R. R.; Pradeep, B.

2016-09-01

SnSe thin films of thickness 180 nm have been deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 523 ± 5 K and pressure of 10-5 mbar. The as-prepared SnSe thin films are characterized for their structural, optical and electrical properties by various experimental techniques. The p-type conductivity, near-optimum direct band gap, high absorption coefficient and good photosensitivity of the SnSe thin film indicate its suitability for photovoltaic applications. The optical constants, loss factor, quality factor and optical conductivity of the films are evaluated. The results of Hall and thermoelectric power measurements are correlated to determine the density of states, Fermi energy and effective mass of carriers and are obtained as 2.8 × 1017 cm-3, 0.03 eV and 0.05m 0 respectively. The high Seebeck coefficient ≈ 7863 μV/K, reasonably good power factor ≈ 7.2 × 10-4 W/(m·K2) and thermoelectric figure of merit ≈ 1.2 observed at 42 K suggests that, on further work, the prepared SnSe thin films can also be considered as a possible candidate for cryogenic thermoelectric applications.

Impact of nanostructured thin ZnO film in ultraviolet protection

PubMed Central

Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

2017-01-01

Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field. PMID:28096668

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films

PubMed Central

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A.; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-01-01

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. PEDOT:Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the PEDOT:Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK2 has been readily obtained for PEDOT:Tos thin films following this methodology. PMID:27470637

Structurally-driven Enhancement of Thermoelectric Properties within Poly(3,4-ethylenedioxythiophene) thin Films.

PubMed

Petsagkourakis, Ioannis; Pavlopoulou, Eleni; Portale, Giuseppe; Kuropatwa, Bryan A; Dilhaire, Stefan; Fleury, Guillaume; Hadziioannou, Georges

2016-07-29

Due to the rising need for clean energy, thermoelectricity has raised as a potential alternative to reduce dependence on fossil fuels. Specifically, thermoelectric devices based on polymers could offer an efficient path for near-room temperature energy harvesters. Thus, control over thermoelectric properties of conducting polymers is crucial and, herein, the structural, electrical and thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT) thin films doped with p-toluenesulfonate (Tos) molecules were investigated with regards to thin film processing. Tos thin films were prepared by in-situ polymerization of (3,4-ethylenedioxythiophene) monomers in presence of iron(III) p-toluenesulfonate with different co-solvents in order to tune the film structure. While the Seebeck coefficient remained constant, a large improvement in the electrical conductivity was observed for thin films processed with high boiling point additives. The increase of electrical conductivity was found to be solely in-plane mobility-driven. Probing the thin film structure by Grazing Incidence Wide Angle X-ray Scattering has shown that this behavior is dictated by the structural properties of the Tos films; specifically by the thin film crystallinity combined to the preferential edge-on orientation of the PEDOT crystallites. Consequentially enhancement of the power factor from 25 to 78.5 μW/mK(2) has been readily obtained for Tos thin films following this methodology.

Dielectric and acoustical high frequency characterisation of PZT thin films

NASA Astrophysics Data System (ADS)

Conde, Janine; Muralt, Paul

2010-02-01

Pb(Zr, Ti)O3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solution system is to overcome mechanical losses generally observed in PZT ceramics. To increase the understanding of these losses in textured thin films, thin film bulk acoustic resonators (TFBAR's) based on PZT thin films with compositions either in the tetragonal region or at the morphotropic phase boundary and (111) or {100} textures were fabricated and studied up to 2 GHz. The dielectric and elastic materials coefficients were extracted from impedance measurements at the resonance frequency. The dispersion of the dielectric constant was obtained from impedance measurements up to 2 GHz. The films with varying compositions, textures and deposition methods (sol-gel or sputtering) were compared in terms of dielectric and acoustical properties.

Broadly tunable thin-film intereference coatings: active thin films for telecom applications

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

2003-06-01

Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

Low temperature process for obtaining thin glass films

DOEpatents

Brinker, C. Jeffrey; Reed, Scott T.

1984-01-01

A method for coating a substrate with a glass-like film comprises, applying to the substrate an aqueous alcoholic solution containing a polymeric network of partially hydrolyzed metal alkoxide into which network there is incorporated finely powdered glass, whereby there is achieved on the substrate a coherent and adherent initial film; and heating said film to a temperature sufficient to melt said powdered glass component, thereby converting said initial film to a final densified film.

Low temperature process for obtaining thin glass films

DOEpatents

Brinker, C.J.; Reed, S.T.

A method for coating a substrate with a glass-like film comprises, applying to the substrate an aqueous alcoholic solution containing a polymeric network of partially hydrolyzed metal alkoxide into which network there is incorporated finely powdered glass, whereby there is achieved on the substrate a coherent and adherent initial film; and heating said film to a temperature sufficient to melt said powdered glass component, thereby converting said initial film to a final densified film.

Measurements of stress evolution during thin film deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chason, E.; Floro, J.A.

1996-05-01

We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiG alloy films are presented to demonstrate the unique information that can be obtained during growth.

SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

NASA Astrophysics Data System (ADS)

Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

2016-05-01

The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

Mechanics analysis of the multi-point-load process for the thin film solar cell

NASA Astrophysics Data System (ADS)

Wang, Zhiming; Wei, Guangpu; Gong, Zhengbang

2008-02-01

The main element of thin film solar cell is silicon. Because of the special mechanical characteristic of silicon, the method of loading pressure on the thin film solar cell and the value of pressure is the key problem which must be solved during the manufacturing of thin film solar cell. This paper describes the special mechanical characteristic of silicon, discussed the test method overall; value of pressure on thin film solar cell; the elements and the method of load by ANSYS finite element, according to these theory analysis, we obtained the key conclusion in the actual operation, these result have a great meaning in industry.

Preparation, characterization and gas sensing performance of BaTiO3 nanostructured thin films

NASA Astrophysics Data System (ADS)

Suryawanshi, Dinesh N.; Pathan, Idris G.; Bari, Anil. R.; Patil, Lalchand A.

2018-05-01

Spray pyrolysis techniques was employed to prepare BaTiO3 thin films. AR grade solutions of Barium chloride (0.05 M) and Titanium chloride (0.05 M) were mixed in the proportion of 30:70, 50:50 and 70:30. The solutions were sprayed on quartz substrate heated at 350°C temperature to obtain the films. These thin films were annealed for a two hours at 600°C in air medium respectively. The prepared thin films were characterized using XRD, FESEM, EDAX, TEM. The electrical and gas sensing properties of these films were investigated. 50:50 film showed better response to Liquid Petroleum Gas (LPG) as compare 30:70 and 70:30 films.

YSZ thin films with minimized grain boundary resistivity

DOE PAGES

Mills, Edmund M.; Kleine-Boymann, Matthias; Janek, Juergen; ...

2016-03-31

In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e.g. strain-induced mobility changes) at the heterophase boundary with the substrate. Still largely unexplored is the possibility of manipulation of grain boundary resistivity in polycrystalline solid electrolyte films, clearly a limiting factor in their ionic conductivity. Here in this paper, we report that the ionicmore » conductivity of yttria stabilized zirconia thin films with nano-columnar grains grown on a MgO substrate nearly reaches that of the corresponding single crystal when the thickness of the films becomes less than roughly 8 nm (smaller by a factor of three at 500 °C). Using impedance spectroscopy, the grain boundary resistivity was probed as a function of film thickness. The resistivity of the grain boundaries near the film–substrate interface and film surface (within 4 nm of each) was almost entirely eliminated. This minimization of grain boundary resistivity is attributed to Mg 2+ diffusion from the MgO substrate into the YSZ grain boundaries, which is supported by time of flight secondary ion mass spectroscopy measurements. We suggest grain boundary “design” as an attractive method to obtain highly conductive solid electrolyte thin films.« less

Electric Transport Phenomena of Nanocomposite Organic Polymer Thin Films

NASA Astrophysics Data System (ADS)

Jira, Nicholas C.; Sabirianov, Ildar; Ilie, Carolina C.

We discuss herein the nanocomposite organic thin film diodes for the use of plasmonic solar cells. This experimental work follows the theoretical calculations done for plasmonic solar cells using the MNPBEM toolbox for MatLab. These calculations include dispersion curves and amount of light scattering cross sections for different metallic nanoparticles. This study gives us clear ideas on what to expect from different metals, allowing us to make the best choice on what to use to obtain the best results. One specific technique for light trapping in thin films solar cells utilizes metal nanoparticles on the surface of the semiconductor. The characteristics of the metal, semiconductor interface allows for light to be guided in between them causing it to be scattered, allowing for more chances of absorption. The samples were fabricated using organic thin films made from polymers and metallic nanoparticles, more specifically Poly(1-vinylpyrrolidone-co-2-dimethylaminoethyl methacrylate) copolymer and silver or gold nanoparticles. The two fabrication methods applied include spin coating and Langmuir-Blodgett technique. The transport properties are obtained by analyzing the I-V curves. We will also discuss the resistance, resistivity, conductance, density of charge carriers. SUNY Oswego SCAC Grant.

Semiconductor-nanocrystal/conjugated polymer thin films

DOEpatents

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Semiconductor-nanocrystal/conjugated polymer thin films

DOEpatents

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2010-08-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Microstructure and Shape Memory Behavior of Ti-Nb Shape Memory Alloy Thin Film

NASA Astrophysics Data System (ADS)

Meng, X. L.; Sun, B.; Sun, J. Y.; Gao, Z. Y.; Cai, W.; Zhao, L. C.

2017-09-01

Ti-Nb shape memory alloy (SMA) thin film is a promising candidate applied as microactuator in biomedical field. In this study, the microstructure and shape memory behavior of Ti-Nb SMA thin films in different heat treatment conditions have been investigated. Fine ω phases embedded in the β phase matrix suppress the martensitic transformation of the films. As a result, the as-deposited and most of the annealed films consist of the β and α″ dual phases. The annealed Ti-Nb thin film shows excellent superelasticity effect when deformed above the reverse martensitic transformation temperature, that is 3.5% total recovery strain can be obtained when 4% pre-strain is loaded.

Thin film absorber for a solar collector

DOEpatents

Wilhelm, William G.

1985-01-01

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Self-assembly of dodecaphenyl POSS thin films

NASA Astrophysics Data System (ADS)

Handke, Bartosz; Klita, Łukasz; Niemiec, Wiktor

2017-12-01

The self-assembly abilities of Dodecaphenyl Polyhedral Oligomeric Silsesquioxane thin films on Si(1 0 0) surfaces were studied. Due to their thermal properties - relatively low sublimation temperature and preservation of molecular structure - cage type silsesquioxanes are ideal material for the preparation of a thin films by Physical Vapor Deposition. The Ultra-High Vacuum environment and the deposition precision of the PVD method enable the study of early stages of thin film growth and its molecular organization. X-ray Reflectivity and Atomic Force Microscopy measurements allow to pursuit size-effects in the structure of thin films with thickness ranges from less than a single molecular layer up to several tens of layers. Thermal treatment of the thin films triggered phase change: from a poorly ordered polycrystalline film into a well-ordered multilayer structure. Self-assembly of the layers is the effect of the π-stacking of phenyl rings, which force molecules to arrange in a superlattice, forming stacks of alternating organic-inorganic layers.

Thin-film Rechargeable Lithium Batteries

DOE R&D Accomplishments Database

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-01

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Methods of making non-covalently bonded carbon-titania nanocomposite thin films and applications of the same

DOEpatents

Liang, Yu Teng; Vijayan, Baiju K.; Gray, Kimberly A.; Hersam, Mark C.

2016-07-19

In one aspect, a method of making non-covalently bonded carbon-titania nanocomposite thin films includes: forming a carbon-based ink; forming a titania (TiO.sub.2) solution; blade-coating a mechanical mixture of the carbon-based ink and the titania solution onto a substrate; and annealing the blade-coated substrate at a first temperature for a first period of time to obtain the carbon-based titania nanocomposite thin films. In certain embodiments, the carbon-based titania nanocomposite thin films may include solvent-exfoliated graphene titania (SEG-TiO.sub.2) nanocomposite thin films, or single walled carbon nanotube titania (SWCNT-TiO.sub.2) nanocomposite thin films.

Effects of Gamma Irradiation on Polyvinylidene Fluoride Thin Films

NASA Astrophysics Data System (ADS)

Madivalappa, Shivaraj; Jali, V. M.

2018-02-01

Polyvinylidene fluoride thin films were synthesized by Sol-Gel method with spin rate of 3000 rpm for 30 sec on ITO glass substrates and were annealed at 170 C. The films were irradiated by Gamma radiation with different doses (10, 30, 40 and 50 kGy). XRD and FTIR spectra have been obtained to identify the presence of α / β phases. Mean crystallite size was calculated by Scherer’s equation. Different vibrational bands were identified and percentage of β phase was determined by FTIR analysis. Optical properties like band gap, refractive index, optical activation energy have been determined. Surface morphology and compositions of pristine and gamma irradiated PVDF thin films were confirmed respectively, by SEM and Energy dispersive X-ray analysis. The comparison of the structural and optical optical properties of pristine PVDF polymer film has been made with those of the Gamma irradiated films.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

An overview of thin film nitinol endovascular devices.

PubMed

Shayan, Mahdis; Chun, Youngjae

2015-07-01

Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Stretchable, adhesive and ultra-conformable elastomer thin films.

PubMed

Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

2016-11-16

Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (T g ). In this paper, we report that free-standing polystyrene (PS, T g : 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, T g : -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (R a = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

Chemically prepared La2Se3 nanocubes thin film for supercapacitor application.

PubMed

Patil, S J; Lokhande, V C; Chodankar, N R; Lokhande, C D

2016-05-01

Lanthanum selenide (La2Se3) nanocubes thin film is prepared via successive ionic layer adsorption and reaction (SILAR) method and utilized for energy storage application. The prepared La2Se3 thin film is characterized by X-ray diffraction, field emission scanning electron microscopy and contact angle measurement techniques for structural, surface morphological and wettability studies, respectively. Energy dispersive X-ray microanalysis (EDAX) is performed in order to obtain the elemental composition of the thin film. The La2Se3 film electrode shows a maximum specific capacitance of 363 F g(-1) in a 0.8 M LiClO4/PC electrolyte at a scan rate of 5 mV s(-1) within 1.3 V/SCE potential range. The specific capacitive retention of 83 % of La2Se3 film electrode is obtained over 1000 cyclic voltammetry cycles. The predominant performance, such as high energy (80 Wh kg(-1)) and power density (2.5 kW kg(-1)), indicates that La2Se3 film electrode facilitates fast ion diffusion during redox processes. Copyright © 2016 Elsevier Inc. All rights reserved.

The Thin Oil Film Equation

NASA Technical Reports Server (NTRS)

Brown, James L.; Naughton, Jonathan W.

1999-01-01

A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

Development of High Resistive and High Magnetization Soft Thin Film and Fabrication of Thin Film Inductors

DTIC Science & Technology

2004-11-01

properties of Co- doped ZnO nanocluster films", .J. of Appl. Phys. in press, 2005 2. Presentations (contributed): Conference Contributions: 1) Y. Qiang...gigahertz band applications. The effects of substrates bias, sputter parameters, and seed-layer have thoroughly been investigated. The magnetic...Adequate properties of soft magnetic thin film were evaluated by an analytical calculation [1] to meet the requirement for gigahertz band thin-film

Solvent-Free Toner Printing of Organic Semiconductor Layer in Flexible Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Sakai, Masatoshi; Koh, Tokuyuki; Toyoshima, Kenji; Nakamori, Kouta; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Shinamura, Shoji; Kudo, Kazuhiro

2017-07-01

A solvent-free printing process for printed electronics is successfully developed using toner-type patterning of organic semiconductor toner particles and the subsequent thin-film formation. These processes use the same principle as that used for laser printing. The organic thin-film transistors are prepared by electrically distributing the charged toner onto a Au electrode on a substrate film, followed by thermal lamination. The thermal lamination is effective for obtaining an oriented and crystalline thin film. Toner printing is environmentally friendly compared with other printing technologies because it is solvent free, saves materials, and enables easy recycling. In addition, this technology simultaneously enables both wide-area and high-resolution printing.

Black thin film silicon

NASA Astrophysics Data System (ADS)

Koynov, Svetoslav; Brandt, Martin S.; Stutzmann, Martin

2011-08-01

"Black etching" has been proposed previously as a method for the nanoscale texturing of silicon surfaces, which results in an almost complete suppression of reflectivity in the spectral range of absorption relevant for photovoltaics. The method modifies the topmost 150 to 300 nm of the material and thus also is applicable for thin films of silicon. The present work is focused on the optical effects induced by the black-etching treatment on hydrogenated amorphous and microcrystalline silicon thin films, in particular with respect to their application in solar cells. In addition to a strong reduction of the reflectivity, efficient light trapping within the modified thin films is found. The enhancement of the optical absorption due to the light trapping is investigated via photometric measurements and photothermal deflection spectroscopy. The correlation of the texture morphology (characterized via atomic force microscopy) with the optical effects is discussed in terms of an effective medium with gradually varying optical density and in the framework of the theory of statistical light trapping. Photoconductivity spectra directly show that the light trapping causes a significant prolongation of the light path within the black silicon films by up to 15 μm for ˜1 μm thick films, leading to a significant increase of the absorption in the red.

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Thin film atomic hydrogen detectors

NASA Technical Reports Server (NTRS)

Gruber, C. L.

1977-01-01

Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

Confinement effects on thin polymer films

NASA Astrophysics Data System (ADS)

Dalnoki-Veress, Karoly J. T.

We present the results of four projects investigating the effects of confinement on polymeric systems. The first study dealt with polymer blends that are quenched using a spincoating technique rather than a temperature quench. The mass fraction of two blends was varied to determine the effect of the substrate-blend interface on the thin film phase separation morphology. Quantitative measurements of the morphology on three different substrates revealed significant differences in the phase separation morphology as a result of the different wetting properties of the polymer blend on the substrates. The second project dealt with the effect of mechanical confinement on the phase separation of polymer blend thin films. We measured the phase separation morphology of polystyrene/poly (methyl methacrylate) (PS/PMMA) blend films of thickness h on a silicon oxide (SiOx) substrate with a SiOx capping layer. A novel phase separation morphology was observed for small capping layer thicknesses L as well as a transition from lateral to lamellar morphology as L is increased. A simple model is presented which explains the observed lateral morphology, and the morphology transition, in terms of a balance between the free energy increase associated with forming the interfaces between PS-rich and PMMA-rich domains, and the free energy increase associated with the elastic bending of the SiOx capping layer. Direct control of the amplitude and period of the deformation is achieved by varying h and L. Reasonable agreement is obtained between the predicted amplitude of the rippling of the film surface and that measured directly using atomic force microscopy. For temperatures greater than the glass transition temperature Tg, thin freely-standing polymer films are unstable to the formation of holes. In the third project, we have studied the formation and growth of two types of holes: those which form spontaneously when the films are heated above Tg, and those purposely nucleated using a heated

Electronic Devices Based on Oxide Thin Films Fabricated by Fiber-to-Film Process.

PubMed

Meng, You; Liu, Ao; Guo, Zidong; Liu, Guoxia; Shin, Byoungchul; Noh, Yong-Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

2018-05-30

Technical development for thin-film fabrication is essential for emerging metal-oxide (MO) electronics. Although impressive progress has been achieved in fabricating MO thin films, the challenges still remain. Here, we report a versatile and general thermal-induced nanomelting technique for fabricating MO thin films from the fiber networks, briefly called fiber-to-film (FTF) process. The high quality of the FTF-processed MO thin films was confirmed by various investigations. The FTF process is generally applicable to numerous technologically relevant MO thin films, including semiconducting thin films (e.g., In 2 O 3 , InZnO, and InZrZnO), conducting thin films (e.g., InSnO), and insulating thin films (e.g., AlO x ). By optimizing the fabrication process, In 2 O 3 /AlO x thin-film transistors (TFTs) were successfully integrated by fully FTF processes. High-performance TFT was achieved with an average mobility of ∼25 cm 2 /(Vs), an on/off current ratio of ∼10 7 , a threshold voltage of ∼1 V, and a device yield of 100%. As a proof of concept, one-transistor-driven pixel circuit was constructed, which exhibited high controllability over the light-emitting diodes. Logic gates based on fully FTF-processed In 2 O 3 /AlO x TFTs were further realized, which exhibited good dynamic logic responses and voltage amplification by a factor of ∼4. The FTF technique presented here offers great potential in large-area and low-cost manufacturing for flexible oxide electronics.

Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

2016-08-01

The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

Dynamic delamination of patterned thin films

NASA Astrophysics Data System (ADS)

Kandula, Soma S. V.; Tran, Phuong; Geubelle, Philippe H.; Sottos, Nancy R.

2008-12-01

We investigate laser-induced dynamic delamination of a patterned thin film on a substrate. Controlled delamination results from our insertion of a weak adhesion region beneath the film. The inertial forces acting on the weakly bonded portion of the film lead to stable propagation of a crack along the film/substrate interface. Through a simple energy balance, we extract the critical energy for interfacial failure, a quantity that is difficult and sometimes impossible to characterize by more conventional methods for many thin film/substrate combinations.

Surface-area-controlled synthesis of porous TiO2 thin films for gas-sensing applications

NASA Astrophysics Data System (ADS)

Park, Jae Young; Kim, Ho-hyoung; Rana, Dolly; Jamwal, Deepika; Katoch, Akash

2017-03-01

Surface-area-controlled porous TiO2 thin films were prepared via a simple sol-gel chemical route, and their gas-sensing properties were thoroughly investigated in the presence of typical oxidizing NO2 gas. The surface area of TiO2 thin films was controlled by developing porous TiO2 networked by means of controlling the TiO2-to-TTIP (titanium isopropoxide, C12H28O4Ti) molar ratio, where TiO2 nanoparticles of size ˜20 nm were used. The sensor’s response was found to depend on the surface area of the TiO2 thin films. The porous TiO2 thin-film sensor with greater surface area was more sensitive than those of TiO2 thin films with lesser surface area. The improved sensing ability was ascribed to the porous network formed within the thin films by TiO2 sol. Our results show that surface area is a key parameter for obtaining superior gas-sensing performance; this provides important guidelines for preparing and using porous thin films for gas-sensing applications.

Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications

NASA Astrophysics Data System (ADS)

Faÿ, S.; Shah, A.

Metalorganic chemical vapor deposition of ZnO films (MOCVD) [1] started to be comprehensively investigated in the 1980s, when thin film industries were looking for ZnO deposition processes especially useful for large-scale coatings at high growth rates. Later on, when TCO for thin film solar cells started to be developed, another advantage of growing TCO films by the CVD process has been highlighted: the surface roughness. Indeed, a large number of studies on CVD ZnO revealed that an as-grown rough surface cn be obtained with this deposition process [2-4]. A rough surface induces a light scattering effect, which can significantly improve light trapping (and therefore current photo-generation) within thin film silicon solar cells. The CVD process, indeed, directly leads to as-grown rough ZnO films without any post-etching step (the latter is often introduced to obtain a rough surface, when working with as-deposited flat sputtered ZnO). This fact could turn out to be a significant advantage when upscaling the manufacturing process for actual commercial production of thin film solar modules. The zinc and oxygen sources for CVD growth of ZnO films are given in Table 6.1.

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Tungsten-doped thin film materials

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

High-throughput screening for combinatorial thin-film library of thermoelectric materials.

PubMed

Watanabe, Masaki; Kita, Takuji; Fukumura, Tomoteru; Ohtomo, Akira; Ueno, Kazunori; Kawasaki, Masashi

2008-01-01

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.

Thermal conductivity model for nanoporous thin films

NASA Astrophysics Data System (ADS)

Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

2018-03-01

Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Low-Cost Detection of Thin Film Stress during Fabrication

NASA Technical Reports Server (NTRS)

Nabors, Sammy A.

2015-01-01

NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.

Effect of substrate bending on the piezoelectric measurement of PZT thin film

NASA Astrophysics Data System (ADS)

Xu, Xiaohui; Tang, Jianhong; He, Liangna

2009-05-01

Bonding conditions between PZT thin film and sample holder greatly affect the strain measurement of the PZT sample. The influence of various bonding conditions on the measured displacement were analyzed using finite element analysis (FEA). One-end fixed sample induces the maximum bending displacement. Experiments were performed on sol-gel derived PZT thin film. The voltage-displacement curve and "butterfly" loop were measured using laser Doppler method with phase detection. Experimental results agreed well with the simulated ones. The measured frequency dependence of piezoelectric response of PZT thin film indicated that, if the operating frequency was lower than 2 kHz, good bonding effect could be obtained when the entire back surface of the sample was glued to a rigid supporter using epoxy resin. A simple bonding model which considered the adhesives as a spring was used to estimate the frequency response of PZT thin film sample.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hong You

2010-08-31

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Method for making surfactant-templated thin films

DOEpatents

Brinker, C. Jeffrey; Lu, Yunfeng; Fan, Hongyou

2002-01-01

An evaporation-induced self-assembly method to prepare a porous, surfactant-templated, thin film by mixing a silica sol, a solvent, a surfactant, and an interstitial compound, evaporating a portion of the solvent to form a liquid, crystalline thin film mesophase material, and then removal of the surfactant template. Coating onto a substrate produces a thin film with the interstitial compound either covalently bonded to the internal surfaces of the ordered or disordered mesostructure framework or physically entrapped within the ordered or disordered mesostructured framework. Particles can be formed by aerosol processing or spray drying rather than coating onto a substrate. The selection of the interstitial compound provides a means for developing thin films for applications including membranes, sensors, low dielectric constant films, photonic materials and optical hosts.

Structural control of In2Se3 polycrystalline thin films by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Okamoto, T.; Nakada, Y.; Aoki, T.; Takaba, Y.; Yamada, A.; Konagai, M.

2006-09-01

Structural control of In2Se3 polycrystalline thin films was attempted by molecular beam epitaxy (MBE) technique. In2Se3 polycrystalline films were obtained on glass substrates at substrate temperatures above 400 °C. VI/III ratio greatly affected crystal structure of In2Se3 polycrystalline films. Mixtures of -In2Se3 and γ-In2Se3 were obtained at VI/III ratios greater than 20, and layered InSe polycrystalline films were formed at VI/III ratios below 1. γ-In2Se3 polycrystalline thin films without α-phase were successfully deposited with VI/III ratios in a range of 2 to 4. Photocurrent spectra of the γ-In2Se3 polycrystalline films showed an abrupt increase at approximately 1.9 eV, which almost corresponds with the reported bandgap of γ-In2Se3. Dark conductivity and photoconductivity measured under solar simulator light (AM 1.5, 100 mW/cm2) were approximately 10-9 and 10-5 S/cm in the γ-In2Se3 polycrystalline thin films, respectively.

Methods for preparing colloidal nanocrystal-based thin films

DOEpatents

Kagan, Cherie R.; Fafarman, Aaron T.; Choi, Ji-Hyuk; Koh, Weon-kyu; Kim, David K.; Oh, Soong Ju; Lai, Yuming; Hong, Sung-Hoon; Saudari, Sangameshwar Rao; Murray, Christopher B.

2016-05-10

Methods of exchanging ligands to form colloidal nanocrystals (NCs) with chalcogenocyanate (xCN)-based ligands and apparatuses using the same are disclosed. The ligands may be exchanged by assembling NCs into a thin film and immersing the thin film in a solution containing xCN-based ligands. The ligands may also be exchanged by mixing a xCN-based solution with a dispersion of NCs, flocculating the mixture, centrifuging the mixture, discarding the supernatant, adding a solvent to the pellet, and dispersing the solvent and pellet to form dispersed NCs with exchanged xCN-ligands. The NCs with xCN-based ligands may be used to form thin film devices and/or other electronic, optoelectronic, and photonic devices. Devices comprising nanocrystal-based thin films and methods for forming such devices are also disclosed. These devices may be constructed by depositing NCs on to a substrate to form an NC thin film and then doping the thin film by evaporation and thermal diffusion.

Structural and morphological study on ZnO:Al thin films grown using DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Astuti, B.; Sugianto; Mahmudah, S. N.; Zannah, R.; Putra, N. M. D.; Marwoto, P.; Aryanto, D.; Wibowo, E.

2018-03-01

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

Preparation of graphene thin films for radioactive samples.

PubMed

Roteta, Miguel; Fernández-Martínez, Rodolfo; Mejuto, Marcos; Rucandio, Isabel

2016-03-01

A new method for the preparation of conductive thin films is presented. The metallization of VYNS films guarantees the electrical conductivity but it results in the breaking of a high proportion of them. Graphene, a two-dimensional nanostructure of monolayer or few layers graphite has attracted a great deal of attention because of its excellent properties such as a good chemical stability, mechanical resistance and extraordinary electronic transport properties. In this work, the possibilities of graphene have been explored as a way to produce electrical conductive thin films without an extra metallization process. The procedure starts with preparing homogenous suspensions of reduced graphene oxide (rGO) in conventional VYNS solutions. Ultra-sonication is used to ensure a good dispersibility of rGO. Graphene oxide (GO) is prepared via oxidation of graphite and subsequent exfoliation by sonication. Different chemically rGO were obtained by reaction with hydrazine sulfate, sodium borohydride, ascorbic acid and hydroiodic acid as reducing agents. The preparation of the thin graphene films is done in a similar way as the conventional VYNS foil preparation procedure. Drops of the solution are deposited onto water. The graphene films have been used to prepare sources containing some electron capture radionuclides ((109)Cd, (55)Fe, (139)Ce) with an activity in the order of 3kBq. The samples have been measured to test the attainable low energy electron efficiency and the energy resolution of Auger and conversion electrons by 4π (electron capture)-γ coincidence measurements. The 4π (electron capture)-γ coincidence setup includes a pressurized proportional counter and a NaI(Tl) detector. Tests with different pressures up to 1000kPa were carried out. All these tests show similar values in both parameters (efficiency and resolution) as those obtained by using the conventional metallized films without the drawback of the high percentage of broken films. Copyright © 2015

Phase-field simulations of thickness-dependent domain stability in PbTiO3 thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheng, Guang; Hu, Jia-Mian; Zhang, Jinxian

Phase-field approach is used to predict the thickness effect on the domain stability in ferroelectric thin films. The strain relaxation mechanism and critical thickness for dislocation formation from both Matthews-Blakeslee (MB) and People-Bean (PB) models are employed. Thickness - strain domain stability diagrams are obtained for PbTiO3 thin films under different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experiment measurements in PbTiO3 thin films grown on SrTiO3 and KTaO3 substrates.

Quaternary schematics for property engineering of CdSe thin films

NASA Astrophysics Data System (ADS)

Chavan, G. T.; Pawar, S. T.; Prakshale, V. M.; Sikora, A.; Pawar, S. M.; Chaure, N. B.; Kamble, S. S.; Maldar, N. N.; Deshmukh, L. P.

2017-12-01

The synthesis of quaternary Cd1-xZnxSySe1-y (0 ≤ x = y ≤ 0.35) thin films was done through indigenously developed chemical solution growth process. As-obtained thin films were subjected to the physical, chemical, structural and optical characterizations. The nearly hydrophobic nature of the as-deposited films except binary CdSe was observed through the wettability studies. The colorimetric studies supported a change in physical color attributes. The elemental analysis done confirmed the formation of Cd(Zn, S)Se and the chemical states of constituent elements as Cd2+, Zn2+, S2- and Se2-. Structural assessment suggested the formation of the polycrystalline quaternary phase of the hexagonal wurtzite structure. The Raman spectroscopy was also employed for the confirmation studies on Cd1-xZnxSySe1-y thin films. Morphological observations indicated microstructural transformation from an aggregated bunch of nano-sized globular grains into a rhomboid network of petal/flakes like crystallites. The atomic force micrographs (AFM) revealed the enhancement in the hillock structures. From advanced AFM characterizations, we observed that the CdSe thin film has leptokurtic (Sku = 3.23) surface, whereas, quaternary Cd(Zn, S)Se films have platykurtic (Sku < 3) surface. The orientation of the surface morphology was observed through the angular spectrum studies. The optical absorption studies revealed direct allowed transition for the films with a continuous modulation of the energy bandgap from 1.8 eV to 2.31 eV.

Evidence for the major contribution of evaporation to tear film thinning between blinks.

PubMed

Kimball, Samuel H; King-Smith, P Ewen; Nichols, Jason J

2010-12-01

To determine the contribution of evaporation to the thinning of the precorneal tear film between blinks. The rate of tear film thinning after a blink was measured using spectral interferometry from the right eyes of 37 subjects. Data were obtained under two different conditions: free air and air-tight goggles. The mean (±SD) tear film thinning rates for subjects was 3.22 ± 4.27 μm/min in free air and -0.16 ± 1.78 μm/min (i.e., a slight but not significant thickening) for the same subjects wearing air-tight goggles; this reduction in thinning rates was significant (P < 0.0001). The large reduction in thinning rate caused by wearing goggles indicates that evaporation is the major cause of thinning between blinks. The mean thinning rate in free air is greater than reported evaporation rates; it is argued that the preocular chambers used in evaporimeters restrict movement of air over the tear film and reduce evaporation compared to our free air condition.

Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

NASA Astrophysics Data System (ADS)

Jeon, Jun-Young; Ha, Tae-Jun

2017-08-01

In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

Controlling Au Nanorod Dispersion in Thin Film Polymer Blends

NASA Astrophysics Data System (ADS)

Hore, Michael J. A.; Composto, Russell J.

2012-02-01

Dispersion of Au nanorods (Au NRs) in polymer thin films is studied using a combination of experimental and theoretical techniques. Here, we incorporate small volume fractions of polystyrene-functionalized Au NRs (φrod 0.05) into polystyrene (PS) thin films. By controlling the ratio of the brush length (N) to that of the matrix polymers (P), we can selectively obtain dispersed or aggregated Au NR structures in the PS-Au(N):PS(P) films. A dispersion map of these structures allows one to choose N and P to obtain either uniformly dispersed Au NRs or aggregates of closely packed, side-by-side aligned Au NRs. Furthermore, by blending poly(2,6-dimethyl-p-phenylene oxide) (PPO) into the PS films, we demonstrate that the Au nanorod morphology can be further tuned by reducing depletion-attraction forces and promoting miscibility of the Au NRs. These predictable structures ultimately give rise to tunable optical absorption in the films resulting from surface plasmon resonance coupling between the Au NRs. Finally, self-consistent field theoretic (SCFT) calculations for both the PS-Au(N):PS(P) and PS-Au(N):PS(P):PPO systems provide insight into the PS brush structure, and allow us to interpret morphology and optical property results in terms of wet and dry PS brush states.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Probing-models for interdigitated electrode systems with ferroelectric thin films

NASA Astrophysics Data System (ADS)

Nguyen, Cuong H.; Nigon, Robin; Raeder, Trygve M.; Hanke, Ulrik; Halvorsen, Einar; Muralt, Paul

2018-05-01

In this paper, a new method to characterize ferroelectric thin films with interdigitated electrodes is presented. To obtain accurate properties, all parasitic contributions should be subtracted from the measurement results and accurate models for the ferroelectric film are required. Hence, we introduce a phenomenological model for the parasitic capacitance. Moreover, two common analytical models based on conformal transformations are compared and used to calculate the capacitance and the electric field. With a thin film approximation, new simplified electric field and capacitance formulas are derived. By using these formulas, more consistent CV, PV and stress-field loops for samples with different geometries are obtained. In addition, an inhomogeneous distribution of the permittivity due to the non-uniform electric field is modelled by finite element simulation in an iterative way. We observed that this inhomogeneous distribution can be treated as a homogeneous one with an effective value of the permittivity.

Thermal characterization of TiCxOy thin films

NASA Astrophysics Data System (ADS)

Fernandes, A. C.; Vaz, F.; Gören, A.; Junge, K. H.; Gibkes, J.; Bein, B. K.; Macedo, F.

2008-01-01

Thermal wave characterization of thin films used in industrial applications can be a useful tool, not just to get information on the films' thermal properties, but to get information on structural-physical parameters, e.g. crystalline structure and surface roughness, and on the film deposition conditions, since the thermal film properties are directly related to the structural-physical parameters and to the deposition conditions. Different sets of TiCXOY thin films, deposited by reactive magnetron sputtering on steel, have been prepared, changing only one deposition parameter at a time. Here, the effect of the oxygen flow on the thermal film properties is studied. The thermal waves have been measured by modulated IR radiometry, and the phase lag data have been interpreted using an Extremum method by which the thermal coating parameters are directly related to the values and modulation frequencies of the relative extrema of the inverse calibrated thermal wave phases. Structural/morphological characterization has been done using X-ray diffraction (XRD) and atomic force microscopy (AFM). The characterization of the films also includes thickness, hardness, and electric resistivity measurements. The results obtained so far indicate strong correlations between the thermal diffusivity and conductivity, on the one hand, and the oxygen flow on the other hand.

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

NASA Astrophysics Data System (ADS)

O'Brien, April; Villegas, Brendon; Gu, J. Y.

2009-01-01

Magnesium diboride (MgB 2) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB 2 thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature ( Tc), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest Tc of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate ( Ts) increased, Tc rose. However, the maximum Ts was limited due to the low magnesium sticking coefficient and thus the Tc value was limited as well. The highest Tc, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low Tc, did not have the well-developed MgB 2 grains while the films with higher Tc displayed the well-developed grains and smooth surface. Although the Tc of sputtered MgB 2 films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB 2 heterostructures using rather simple physical vapor deposition method such as sputtering.

Defect-Controlled Preparation of UiO-66 Metal-Organic Framework Thin Films with Molecular Sieving Capability.

PubMed

Zhang, Caiqin; Zhao, Yajing; Li, Yali; Zhang, Xuetong; Chi, Lifeng; Lu, Guang

2016-01-01

Metal-organic framework (MOF) UiO-66 thin films are solvothermally grown on conducting substrates. The as-synthesized MOF thin films are subsequently dried by a supercritical process or treated with polydimethylsiloxane (PDMS). The obtained UiO-66 thin films show excellent molecular sieving capability as confirmed by the electrochemical studies for redox-active species with different sizes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Applications of Thin Film Thermocouples for Surface Temperature Measurement

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Holanda, Raymond

1994-01-01

Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics

NASA Astrophysics Data System (ADS)

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-01

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS2) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS2 thin film by annealing at 450 °C for 1 h in H2S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 105 and 104 cm‑1 in the visible region, respectively. In addition, SnS and SnS2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS2 thin films exhibited on–off drain current ratios of 8.8 and 2.1 × 103 and mobilities of 0.21 and 0.014 cm2 V‑1 s‑1, respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS2 thin films were 6.0 × 1016 and 8.7 × 1013 cm‑3, respectively, in this experiment.

High quality atomically thin PtSe2 films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

2017-12-01

Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

Structural, Optical and Electrical Properties of ITO Thin Films

NASA Astrophysics Data System (ADS)

Sofi, A. H.; Shah, M. A.; Asokan, K.

2018-02-01

Transparent and conductive thin films of indium tin oxide were fabricated on glass substrates by the thermal evaporation technique. Tin doped indium ingots with low tin content were evaporated in vacuum (1.33 × 10-7 kpa) followed by an oxidation for 15 min in the atmosphere in the temperature range of 600-700°C. The structure and phase purity, surface morphology, optical and electrical properties of thin films were studied by x-ray diffractometry and Raman spectroscopy, scanning electron microcopy and atomic force microscopy, UV-visible spectrometry and Hall measurements in the van der Pauw configuration. The x-ray diffraction study showed the formation of the cubical phase of polycrystalline thin films. The morphological analysis showed the formation of ginger like structures and the energy dispersive x-ray spectrum confirmed the presence of indium (In), tin (Sn) and oxygen (O) elements. Hall measurements confirmed n-type conductivity of films with low electrical resistivity ( ρ) ˜ 10-3 Ω cm and high carrier concentration ( n) ˜ 1020 cm-3. For prevalent scattering mechanisms in the films, experimental data was analyzed by calculating a mean free path ( L) using a highly degenerate electron gas model. Furthermore, to investigate the performance of the deposited films as a transparent conductive material, the optical figure of merit was obtained for all the samples.

Nanoporous structures on ZnO thin films

NASA Astrophysics Data System (ADS)

Gür, Emre; Kılıç, Bayram; Coşkun, C.; Tüzemen, S.; Bayrakçeken, Fatma

2010-01-01

Porous structures were formed on ZnO thin films which were grown by an electrochemical deposition (ECD) method. The growth processes were carried out in a solution of dimethylsulfoxide (DMSO) zinc perchlorate, Zn(ClO 4) 2, at 120 ∘C on indium tin oxide (ITO) substrates. Optical and structural characterizations of electrochemically grown ZnO thin films have shown that the films possess high (0002) c-axis orientation, high nucleation, high intensity and low FWHM of UV emission at the band edge region and a sharp UV absorption edge. Nanoporous structures were formed via self-assembled monolayers (SAMs) of hexanethiol (C 6SH) and dodecanethiol (C 12SH). Scanning electron microscope (SEM) measurements showed that while a nanoporous structure (pore radius 20 nm) is formed on the ZnO thin films by hexanathiol solution, a macroporous structure (pore radius 360 nm) is formed by dodecanethiol solution. No significant variation is observed in X-ray diffraction (XRD) measurements on the ZnO thin films after pore formation. However, photoluminescence (PL) measurements showed that green emission is observed as the dominant emission for the macroporous structures, while no variation is observed for the thin film nanoporous ZnO sample.

Static and Dynamic Properties of Ferroelectric Thin Film Memories.

NASA Astrophysics Data System (ADS)

Duiker, Hendrik Matthew

Several properties of ferroelectric thin-film memories have been modeled. First, it has been observed experimentally that the bulk phase KNO_3 has a first-order phase transition, and that the transition temperature of KNO_3 thin-films increases as the thickness of the film is decreased. A Landau theory of first-order phase transitions in bulk systems has been generalized by adding surface terms to the free energy expansion to account for these transition properties. The model successfully describes the observed transition properties and predicts the existence of films in which the surfaces are ordered at temperatures higher than the bulk transition temperature. Second, the Avrami model of polarization-reversal kinetics has been modified to describe the following cases: ferroelectrics composed of a large number of small grains; ferroelectric thin-films in which nucleation occurs at the surfaces, not in the bulk; ferroelectrics in which long-range dipolar interactions significantly affect the nucleation rate; and non-square wave switching pulses. The models were verified by applying them to the results of two-dimensional Ising model simulations. It was shown that the models allow the possibility of directly obtaining microscopic parameters, such as the nucleation rate and domain wall velocity, from bulk measurements. Finally, a model describing the fatigue of ferroelectric memories has been developed. As a ferroelectric memory fatigues the spontaneous polarization per unit volume decreases, the switching time decreases, and eventually the memory "shorts out" and becomes conducting. The model assumes the following: during each polarization reversal the film undergoes, every unit cell in the film has a chance of "degrading" and thus losing an ion. Degraded cells no longer contribute to the polarization. The ions are allowed to diffuse to the surfaces of the film and form, with other ions, conducting dendrites which grow into the bulk of the film. Computer simulations

Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

DOEpatents

Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

1999-01-01

A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Pei-Jou; Yang, Cheng-Fu; Huang, Hong-Hsin

2015-01-01

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N2 atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C. PMID:28793598

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Pei-Jou; Yang, Cheng-Fu; Huang, Hong-Hsin

2015-10-02

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs' applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N₂ atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C.

In-space fabrication of thin-film structures

NASA Technical Reports Server (NTRS)

Lippman, M. E.

1972-01-01

A conceptual study of physical vapor-deposition processes for in-space fabrication of thin-film structures is presented. Potential advantages of in-space fabrication are improved structural integrity and surface reflectivity of free-standing ultra-thin films and coatings. Free-standing thin-film structures can find use as photon propulsion devices (solar sails). Other applications of the concept involve free-standing shadow shields, or thermal control coatings of spacecraft surfaces. Use of expendables (such as booster and interstage structures) as source material for the physical vapor deposition process is considered. The practicability of producing thin, textured, aluminum films by physical vapor deposition and subsequent separation from a revolving substrate is demonstrated by laboratory experiments. Heating power requirement for the evaporation process is estimated for a specific mission.

Thin film bismuth iron oxides useful for piezoelectric devices

DOEpatents

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Composition gradient, structure, stress, roughness and magnetic properties of 5-500 nm thin NiFe films obtained by electrodeposition

NASA Astrophysics Data System (ADS)

Gong, Jie; Riemer, Steve; Kautzky, Michael; Tabakovic, Ibro

2016-01-01

The composition gradients of 5-500 nm thin NiFe films on Cu and NiP substrates obtained by electrodeposition in stirred plating solutions at pH 3.0 on 8 in wafers were studied. It was found that the average elemental composition of the NiFe changes during electrodeposition with steep downturns of Fe-content, from 58 to 50 wt% Fe, in composition gradient zone near the substrate interface in the thickness range 5-250 nm depending on the electrode substrate (Cu and NiP). The increase of Fe-content in the composition gradient zone is accompanied by the increase of coercivity, Hc, magnetic flux saturation, Bs, saturation magnetostriction, λs, increase of dimensionless roughness, ρrms, and change of stress, σ. The coercivity (easy and hard axis) follows the Neel's relation Hc=ct-n (t is thickness and c is a constant). The mechanisms related to the change of coercivity of the NiFe films deposited on different substrates (Cu and NiP) are discussed in terms of material properties of these films.

Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

PubMed Central

Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

2014-01-01

A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp; Micro System Integration Center; Isobe, Shigehito

2015-09-01

We report on the epitaxial thin film growth of an air-sensitive hydride, lithium hydride (LiH), using pulsed laser deposition (PLD). We first synthesized a dense LiH target, which is key for PLD growth of high-quality hydride films. Then, we obtained epitaxial thin films of [100]-oriented LiH on a MgO(100) substrate at 250 °C under a hydrogen pressure of 1.3 × 10{sup −2} Pa. Atomic force microscopy revealed that the film demonstrates a Stranski-Krastanov growth mode and that the film with a thickness of ∼10 nm has a good surface flatness, with root-mean-square roughness R{sub RMS} of ∼0.4 nm.

Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

NASA Astrophysics Data System (ADS)

Kodan, Nisha; Mehta, B. R.

2018-05-01

Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

Electrically Tunable Integrated Thin-Film Magnetoelectric Resonators

DOE PAGES

El-Ghazaly, Amal; Evans, Joseph T.; Sato, Noriyuki; ...

2017-06-14

Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. This natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics are presented. Moreover, these devices provide electric field control of magnetic permeability in order to change the phase velocity and resonance frequency of coplanar waveguides. During this study, the various thin-film materialmore » phenomena, trade-offs, and integration considerations for composite magnetoelectrics are analyzed and discussed. The fabricated devices achieve reversible tunability of the resonance frequency, characterized by a remarkable converse magnetoelectric coupling coefficient of up to 24 mG cm V -1 using just thin films. Based on this work, suggestions are given for additional optimizations of future designs that will maximize the thin-film magnetoelectric interactions.« less

A crystalline germanium flexible thin-film transistor

NASA Astrophysics Data System (ADS)

Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

2017-11-01

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Chemical bath deposited and dip coating deposited CuS thin films - Structure, Raman spectroscopy and surface study

NASA Astrophysics Data System (ADS)

Tailor, Jiten P.; Khimani, Ankurkumar J.; Chaki, Sunil H.

2018-05-01

The crystal structure, Raman spectroscopy and surface microtopography study on as-deposited CuS thin films were carried out. Thin films deposited by two techniques of solution growth were studied. The thin films used in the present study were deposited by chemical bath deposition (CBD) and dip coating deposition techniques. The X-ray diffraction (XRD) analysis of both the as-deposited thin films showed that both the films possess covellite phase of CuS and hexagonal unit cell structure. The determined lattice parameters of both the films are in agreement with the standard JCPDS as well as reported data. The crystallite size determined by Scherrer's equation and Hall-Williamsons relation using XRD data for both the as-deposited thin films showed that the respective values were in agreement with each other. The ambient Raman spectroscopy of both the as-deposited thin films showed major emission peaks at 474 cm-1 and a minor emmision peaks at 265 cm-1. The observed Raman peaks matched with the covellite phase of CuS. The atomic force microscopy of both the as-deposited thin films surfaces showed dip coating thin film to be less rough compared to CBD deposited thin film. All the obtained results are presented and deliberated in details.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

NASA Astrophysics Data System (ADS)

Eshaghi, F.; Zolanvari, A.

2017-04-01

In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} < uvw \\rangle weak fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} < uvw \\rangle orientations as their preferred orientations, but their preferred fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} < uvw \\rangle fiber texture.

Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

NASA Astrophysics Data System (ADS)

Qiu, Fei; Xu, Zhimou

2009-08-01

In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

Optical spectra obtained from amorphous films of rubrene: Evidence for predominance of twisted isomer

NASA Astrophysics Data System (ADS)

Kytka, M.; Gisslen, L.; Gerlach, A.; Heinemeyer, U.; Kováč, J.; Scholz, R.; Schreiber, F.

2009-06-01

In order to investigate the optical properties of rubrene we study the vibronic progression of the first absorption band (lowest π →π∗ transition). We analyze the dielectric function ɛ2 of rubrene in solution and thin films using the displaced harmonic oscillator model and derive all relevant parameters of the vibronic progression. The findings are supplemented by density functional calculations using B3LYP hybrid functionals. Our theoretical results for the molecule in two different conformations, i.e., with a twisted or planar tetracene backbone, are in very good agreement with the experimental data obtained for rubrene in solution and thin films. Moreover, a simulation based on the monomer spectrum and the calculated transition energies of the two conformations indicates that the thin film spectrum of rubrene is dominated by the twisted isomer.

Optical spectra obtained from amorphous films of rubrene: Evidence for predominance of twisted isomer.

PubMed

Kytka, M; Gisslen, L; Gerlach, A; Heinemeyer, U; Kovác, J; Scholz, R; Schreiber, F

2009-06-07

In order to investigate the optical properties of rubrene we study the vibronic progression of the first absorption band (lowest pi-->pi( *) transition). We analyze the dielectric function epsilon(2) of rubrene in solution and thin films using the displaced harmonic oscillator model and derive all relevant parameters of the vibronic progression. The findings are supplemented by density functional calculations using B3LYP hybrid functionals. Our theoretical results for the molecule in two different conformations, i.e., with a twisted or planar tetracene backbone, are in very good agreement with the experimental data obtained for rubrene in solution and thin films. Moreover, a simulation based on the monomer spectrum and the calculated transition energies of the two conformations indicates that the thin film spectrum of rubrene is dominated by the twisted isomer.

Vapor deposition of thin films

DOEpatents

Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

1992-01-01

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Control of conduction type in ferromagnetic (Zn,Sn,Mn)As2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction

NASA Astrophysics Data System (ADS)

Minamizawa, Yuto; Kitazawa, Tomohiro; Hidaka, Shiro; Toyota, Hideyuki; Nakamura, Shin-ichi; Uchitomi, Naotaka

2018-04-01

The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more than approximately 11 cat.%. It is likely that Mn interstitials (MnI) incorporated by excess Mn doping are located at tetrahedral hollow spaces surrounded by Zn and Sn cation atoms and four As atoms, which are expected to act as donors in (Zn,Sn,Mn)As2, resulting in n-type conduction. The effect of annealing on the structural, electrical and magnetic properties of n-type (Zn,Sn,Mn)As2 thin films was investigated as functions of annealing temperature and time. It was revealed that even if the annealing temperature is considerably higher than the growth temperature of 320 °C, the magnetic properties of the thin films remain stable. This suggests that a MnI complex surrounded by Zn and Sn atoms is thermally stable during high-temperature annealing. The n-type (Zn,Sn,Mn)As2 thin films may be suitable for application as n-type spin-polarized injectors.

Investigations in structural morphological and optical properties of Bi-Pb-S system thin films

NASA Astrophysics Data System (ADS)

Malika, Boukhalfa; Noureddine, Benramdane; Mourad, Medles; Abdelkader, Outzourhit; Attouya, Bouzidi; Hind, Tabet-derraz

Bi2S3, PbS and Bi-Pb-S system thin films were grown on glass substrates by the spray pyrolysis technique. The films growth was realized by the reaction of aqueous solutions of bismuth trichloride (BiCl3) and trihydrate Lead Acetate (TLA) (Pb(CH3COO)2.3H2O) with thiourea on heated substrates. The films study was performed as a function of the TLA volume ratio (TLA vol. ratio) in the solution obtained by the mixture of BiCl3 and thiourea used as precursor solution (PrS). X-ray diffraction (XRD), field emitting scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) were used for structural and compositional analysis of the as deposited films. With the structural investigations, Bi2S3, PbS thin films and PbS-Bi2S3 composite thin films formation was confirmed. Optical properties of the deposited films were obtained using transmittance and reflectance measurements in the wavelength range [200-2500 nm]. The absorption edge shows a shift towards low energy with the increase of the TLA vol. ratio.The optical bandgaps for the films with various TLA vol. ratio are found to lie between those of the Bi2S3 and PbS ones. The optical parameters (extinction coefficient, refractive index, real and imaginary parts if the complex dielectric constant) of the thin films are also investigated. These are found to be dependent on the TLA vol. ratio.

Preparation and bioactive properties of nanocrystalline hydroxyapatite thin films obtained by conversion of atomic layer deposited calcium carbonate.

PubMed

Holopainen, Jani; Kauppinen, Kyösti; Mizohata, Kenichiro; Santala, Eero; Mikkola, Esa; Heikkilä, Mikko; Kokkonen, Hanna; Leskelä, Markku; Lehenkari, Petri; Tuukkanen, Juha; Ritala, Mikko

2014-09-01

Nanocrystalline hydroxyapatite thin films were fabricated on silicon and titanium by atomic layer deposition (ALD) of CaCO3 and its subsequent conversion to hydroxyapatite by diammonium hydrogen phosphate (DAP) solution. The effects of conversion process parameters to crystallinity and morphology of the films were examined. DAP concentration was found to be critical in controlling the crystal size and homogeneity of the films. The hydroxyapatite phase was identified by XRD. ToF-elastic recoil detection analysis studies revealed that the films are calcium deficient in relation to hydroxyapatite with a Ca/P ratio of 1.39 for films converted with 0.2 M DAP at 95 °C. The coatings prepared on titanium conformally follow the rough surface topography of the substrate, verifying that the good step coverage of the ALD method was maintained in the conversion process. The dissolution tests revealed that the coating was nondissolvable in the cell culture medium. Annealing the coated sample at 700 °C for 1 h seemed to enhance its bonding properties to the substrate. Also, the biocompatibility of the coatings was confirmed by human bone marrow derived cells in vitro. The developed method provides a new possibility to produce thin film coatings on titanium implants with bone-type hydroxyapatite that is biocompatible with human osteoblasts and osteoclasts.

Defect-driven flexochemical coupling in thin ferroelectric films

NASA Astrophysics Data System (ADS)

Eliseev, Eugene A.; Vorotiahin, Ivan S.; Fomichov, Yevhen M.; Glinchuk, Maya D.; Kalinin, Sergei V.; Genenko, Yuri A.; Morozovska, Anna N.

2018-01-01

Using the Landau-Ginzburg-Devonshire theory, we considered the impact of the flexoelectrochemical coupling on the size effects in polar properties and phase transitions of thin ferroelectric films with a layer of elastic defects. We investigated a typical case, when defects fill a thin layer below the top film surface with a constant concentration creating an additional gradient of elastic fields. The defective surface of the film is not covered with an electrode, but instead with an ultrathin layer of ambient screening charges, characterized by a surface screening length. Obtained results revealed an unexpectedly strong effect of the joint action of Vegard stresses and flexoelectric effect (shortly flexochemical coupling) on the ferroelectric transition temperature, distribution of the spontaneous polarization and elastic fields, domain wall structure and period in thin PbTi O3 films containing a layer of elastic defects. A nontrivial result is the persistence of ferroelectricity at film thicknesses below 4 nm, temperatures lower than 350 K, and relatively high surface screening length (˜0.1 nm ) . The origin of this phenomenon is the flexoelectric coupling leading to the rebuilding of the domain structure in the film (namely the cross-over from c-domain stripes to a-type closure domains) when its thickness decreases below 4 nm. The ferroelectricity persistence is facilitated by negative Vegard effect. For positive Vegard effect, thicker films exhibit the appearance of pronounced maxima on the thickness dependence of the transition temperature, whose position and height can be controlled by the defect type and concentration. The revealed features may have important implications for miniaturization of ferroelectric-based devices.

MCP performance improvement using alumina thin film

NASA Astrophysics Data System (ADS)

Yang, Yuzhen; Yan, Baojun; Liu, Shulin; Zhao, Tianchi; Yu, Yang; Wen, Kaile; Li, Yumei; Qi, Ming

2017-10-01

The performance improvement using alumina thin film on a dual microchannel plate (MCP) detector for single electron counting was investigated. The alumina thin film was coated on all surfaces of the MCPs by atomic layer deposition method. It was found that the gain, the single electron resolution and the peak-to-valley ratio of the dual MCP detector were significantly enhanced by coating the alumina thin film. The optimum operating conditions of the new dual MCP detector have been studied.

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

Miniature hybrid microwave IC's using a novel thin-film technology

NASA Astrophysics Data System (ADS)

Eda, Kazuo; Miwa, Tetsuji; Taguchi, Yutaka; Uwano, Tomoki

1990-12-01

A novel thin-film technology for miniature hybrid microwave ICs is presented. All passive components, such as resistors and capacitors, are fully integrated on ordinary alumina ceramic substrates using the thin-film technology with very high yield. The numbers of parts and wiring processes were significantly reduced. This technology was applied to the fabrication of Ku-band solid-state power amplifiers. This thin-film technology offers the following advantages: (1) a very high yield fabrication process of thin-film capacitor having excellent electrical characteristics in the gigahertz range (Q = 230 at 12 GHz) and reliability: (2) two kinds of thin-film resistors having different temperature coefficients of resistivity and a lift-off process to integrate them with thin-film capacitors; and (3) a matching method using the thin-film capacitor.

Effect of substrate and post-deposition annealing on nanostructure and optical properties of CdTe thin films

NASA Astrophysics Data System (ADS)

Hasani, Ebrahim; Raoufi, Davood

2018-04-01

Thermal evaporation is one of the promising methods for depositing CdTe thin films, which can obtain the thin films with the small thickness. In this work, CdTe nanoparticles have deposited on SiO2 substrates such as quartz (crystal) and glass (amorphous) at a temperature (Ts) of 150 °C under a vacuum pressure of 2 × 10‑5 mbar. The thickness of CdTe thin films prepared under vacuum pressure is 100 nm. X-ray diffraction analysis (XRD) results showed the formation of CdTe cubic phase with a strong preferential orientation of (111) crystalline plane on both substrates. The grain size (D) in this orientation obtained about 7.41 and 5.48 nm for quartz and glass respectively. Ultraviolet-visible spectroscopy (UV–vis) measurements indicated the optical band gap about 1.5 and 1.52 eV for CdTe thin films deposited on quartz and glass respectively. Furthermore, to show the effect of annealing temperature on structure and optical properties of CdTe thin films on quartz and glass substrates, the thin films have been annealed at temperatures 50 and 70 °C for one hour. The results of this work indicate that the structure’s parameters and optical properties of CdTe thin films change due to increase in annealing temperature.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic

Self-anti-reflective density-modulated thin films by HIPS technique

NASA Astrophysics Data System (ADS)

Keles, Filiz; Badradeen, Emad; Karabacak, Tansel

2017-08-01

A critical factor for an efficient light harvesting device is reduced reflectance in order to achieve high optical absorptance. In this regard, refractive index engineering becomes important to minimize reflectance. In this study, a new fabrication approach to obtain density-modulated CuIn x Ga(1-x)Se2 (CIGS) thin films with self-anti-reflective properties has been demonstrated. Density-modulated CIGS samples were fabricated by utilizing high pressure sputtering (HIPS) at Ar gas pressure of 2.75 × 10-2 mbar along with conventional low pressure sputtering (LPS) at Ar gas pressure of 3.0 × 10-3 mbar. LPS produces conventional high density thin films while HIPS produces low density thin films with approximate porosities of ˜15% due to a shadowing effect originating from the wide-spread angular atomic of HIPS. Higher pressure conditions lower the film density, which also leads to lower refractive index values. Density-modulated films that incorporate a HIPS layer at the side from which light enters demonstrate lower reflectance thus higher absorptance compared to conventional LPS films, although there is not any significant morphological difference between them. This result can be attributed to the self-anti-reflective property of the density-modulated samples, which was confirmed by the reduced refractive index calculated for HIPS layer via an envelope method. Therefore, HIPS, a simple and scalable approach, can provide enhanced optical absorptance in thin film materials and eliminate the need for conventional light trapping methods such as anti-reflective coatings of different materials or surface texturing.

Electrostatic thin film chemical and biological sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.

A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includesmore » providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.« less

Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

NASA Astrophysics Data System (ADS)

Watanabe, Takayuki; Funakubo, Hiroshi

2006-09-01

This article describes the current progress in thin bismuth layer-structured ferroelectric films (BLSFs) including SrBi2Ta2O9 and (Bi,La)4Ti3O12, particularly those developed in the last ten years. BLSF thin films can be applied to ferroelectric random access memories because of their durable fatigue-free properties and lead-free composition. We will briefly introduce epitaxial thin films grown on a variety of substrates. Because of the difficulty in growing single crystals of sufficient size to characterize the ferroelectric behavior in specific crystal growth directions, we will characterize epitaxially grown thin films to obtain basic information about the anisotropic switching behavior, which is important for evaluating the performance of emerging materials. We will then discuss the fiber-textured growth on the (111)Pt-covered Si substrates of SrBi2Ta2O9 and Bi4Ti3O12 thin films. Because we expect that the spread crystal orientation will affect the bit-to-bit errors, we believe that the fiber-textured growth and the characterization technique for the deposited film orientation are interesting from a practical standpoint. Another specific challenge of thin film growth is the growth of a-axis-(polar axis)-oriented films. a-/b-axis-oriented films are characterized both crystallographically and by electric hysteresis loop. The hysteresis performance was in accordance with the volume fraction of the a /b domains; however, no evidence for 90° switching of the b domain by an external electric field was obtained. The control of film orientation also allows systematic studies on the effects of a structural modification and relation between spontaneous polarization and Curie temperature, examples of which are given in this paper. After a short description of the piezoelectric properties, we will conclude with a summary and the future prospects of BLSF thin films for research and applications.

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

DOE PAGES

Jensen, K. M.Ø.; Blichfeld, A. B.; Bauers, S. R.; ...

2015-07-05

By means of normal incidence, high flux and high energy x-rays, we have obtained total scattering data for Pair Distribution Function (PDF) analysis from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. We illustrate the ‘tfPDF’ method through studies of as depositedmore » (i.e. amorphous) and crystalline FeSb 3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb 3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb 3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb 6 octahedra with motifs highly resembling the local structure in crystalline FeSb 3. Analysis of the amorphous structure allows predicting whether the final crystalline product will form the FeSb 3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.« less

PREFACE: Innovations in Thin Film Processing and Characterisation

NASA Astrophysics Data System (ADS)

Henrion, Gérard; Belmahi, Mohammed; Andrieu, Stéphane

2010-07-01

This special issue contains selected papers which were presented as invited or contributed communications at the 4th International Conference on Innovation in Thin Film Processing and Characterization (ITFPC'09) which was held on 17-20 November, 2009 in Nancy (France) Jointly organized by the French Vacuum Society and the Institut Jean Lamour-a joint research unit specialized in materials, metallurgy, nano-sciences, plasmas and surfaces-the ITFPC conferences aim at providing an open forum to discuss the progress and latest developments in thin film processing and engineering. Invited lectures aim particularly at providing overviews on scientific topics while contributed communications focus on particular cutting-edge aspects of thin film science and technology, including CVD, PVD and ion beam assisted processes. The 2009 conference was organized along the 6 main following topics: Thin films processing and surface engineering Numerical simulation and thin film characterization Protective applications of thin films Energy, environment and health applications of thin films Micro- and nano-patterning of thin films New properties and applications resulting from patterned thin films which were completed by a special half day session devoted to industry-supported innovation. 180 scientists from 20 worldwide countries attended the different sessions along with the 9 invited lectures and 130 contributions were given. Besides the outstanding scientific program, a half-day tutorial session preceded the conference. During the short courses, emphasis was laid on: Lithography for thin film patterning Mechanical properties of thin films Principles and applications of reactive sputtering processes. The French Vacuum Society granted financial aid to PhD students who applied for it in order to encourage the participation of young scientists. The 19 papers published in this volume were accepted for publication after peerreviewal as for regular papers. As chairmen of this conference

Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Majid, E-mail: majids@hotmail.com; Islam, Mohammad, E-mail: mohammad.islam@gmail.com

2013-12-15

Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thinmore » films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.« less

Thin film photovoltaic device

DOEpatents

Catalano, Anthony W.; Bhushan, Manjul

1982-01-01

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Thin film photovoltaic device

DOEpatents

Catalano, A.W.; Bhushan, M.

1982-08-03

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Investigations of LRE-HRE-TM thin films for hybrid recording

NASA Astrophysics Data System (ADS)

Li, Zuoyi; Cheng, Xiaomin; Jin, Fang; Li, Zhen; Lin, Gengqi; Yang, Xiaofei

2005-09-01

Light rare earth-heavy rare earth-transition metal (LRE-HRE-TM) thin films are a kind of important recording media. A lot of researches have been carried out on the LRE-HRE-TM thin films to improve its properties for data storage application and fruitful results have been achieved. This report gives a glance on the evolution of the research on LRE-HRE-TM recording media. At the same time, combined with the hybrid recording technology, some experimental results obtained on LRE-HRE-TM recording media are discussed, which suggest the promising prospect of the LRE-HRE-TM media in hybrid recording application.

Bimetallic clustered thin films with variable electro-optical properties

NASA Astrophysics Data System (ADS)

Antipov, A.; Bukharov, D.; Arakelyan, S.; Osipov, A.; Lelekova, A.

2018-01-01

The drop deposition of colloidal nanoparticles was performed from water-based colloidal solutions. The proposed procedure is based on the agglomeration of colloidal particles in laser-assisted evaporation processes. The evaporation process was resulted in the formation of clustered thin films on a glass substrate. In the experiments with bimetallic Au:Ag solutions, the clustered films are grown, the formation of the clustered films with the average height of 100 nm was achieved. Optical properties of the deposited structures were investigated experimentally. It is shown that the obtained films may become transparent and its properties are defined by its morphology.

Enhancement of electrical properties in polycrystalline BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Yun, Kwi Young; Ricinschi, Dan; Kanashima, Takeshi; Okuyama, Masanori

2006-11-01

Ferroelectric BiFeO3 thin films were grown on Pt /TiO2/SiO2/Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ˜10-4A /cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC/cm2 at room temperature and 80K, respectively.

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Dissanayake, A.; Mancini, D. C.; Kayani, A.

2011-06-01

Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH4 plasma with N2 gas. Deposition of UNCD thin films was carried out on tungsten (˜15 nm) coated Si substrates with varying concentrations of N2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N2.

Thermoelectric prospects of chemically deposited PbSe and SnSe thin films

NASA Astrophysics Data System (ADS)

Nair, P. K.; Martínez, Ana Karen; Rosa García Angelmo, Ana; Barrios Salgado, Enue; Nair, M. T. S.

2018-03-01

Thin films of PbSe of 400-600 nm in thickness, were obtained via chemical deposition from a solution containing lead nitrate, thiourea and selenosufate. SnSe thin films of 90-180 nm in thickness, were also obtained by chemical deposition from a solution containing selenosulfate. Optical and electrical properties of these thin films were significantly altered by heating them in selenium vapor at 300 °C. Thin film PbSe has a bandgap (Eg) of 1.17 eV (direct gap, forbidden transitions), which decreases to 0.77 eV when it has been heated. Its electrical conductivity (σ) is p-type: 0.18 Ω-1 cm-1 (as-prepared), and 6.4 Ω-1 cm-1 when heated. Thin film SnSe is of orthorhombic crystalline structure which remains stable when heated at 300 °C, but its Eg increases from 1.12 eV (indirect) in as-prepared film to 1.5 eV (direct, forbidden transitions) upon heating. Its electrical conductivity is p-type, which increases from 0.3 Ω-1 cm-1 (as-prepared) to 1 Ω-1 cm-1 when heated (without Se-vapor). When SnSe film is heated at 300 °C in the presence of Se-vapor, they transform to SnSe2, with Eg of 1.5 eV (direct, forbidden) with n-type electrical conductivity, 11 Ω-1 cm-1. The Seebeck coefficient for the PbSe films is: +0.55 mV K-1 (as prepared) and +0.275 mV K-1 (heated); for SnSe films it is: +0.3 mV K-1 (as prepared) and +0.20 mV K-1 (heated); and for SnSe2 film, - 0.35 mV K-1. A five-element PbSe-SnSe2-PbSe-SnSe2-PbSe thermoelectric device demonstrated 50 mV for a temperature difference ΔT = 20 °C (2.5 mV K-1). For SnSe-SnSe2-SnSe-SnSe2-SnSe device, the value is 15 mV for ΔT = 20 °C (0.75 mV K-1). Prospect of these thin films in thermoelectric devices of hybrid materials, in which the coatings may be applied on distinct substrate and geometries is attractive.

Method for making thin polypropylene film

DOEpatents

Behymer, R.D.; Scholten, J.A.

1985-11-21

An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

Electrical Conductivity and Barrier Properties of Lithium Niobate Thin Films

NASA Astrophysics Data System (ADS)

Gudkov, S. I.; Baklanova, K. D.; Kamenshchikov, M. V.; Solnyshkin, A. V.; Belov, A. N.

2018-04-01

The thin-film structures made of LiNbO3 and obtained via laser ablation and magnetron sputtering are studied with volt-farad and volt-ampere characteristics. A potential barrier on the Si-LiNbO3 interface was found for both types of the films with the capacitance-voltage characteristics. The current-voltage characteristics showed that there are several conduction mechanisms in the structures studied. The Poole-Frenkel effect and the currents limited by a space charge mainly contribute to the electrical conductivity in the LiNbO3 film produced with the laser ablation method. The currents limited by a space charge contribute to the main mechanism in the film heterostructure obtained with the magnetron sputtering method.

Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, Jyoti, E-mail: shah.jyoti1@gmail.com; Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com

2014-04-07

Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film inmore » presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.« less

Doped indium nitride thin film by sol-gel spin coating method

NASA Astrophysics Data System (ADS)

Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

2017-12-01

In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

High density nonmagnetic cobalt in thin films

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Singh, Surendra; Basu, Saibal; Roy, Anupam; Movva, Hema C. P.; Lauter, V.; Satpati, B.; Dev, B. N.

2018-05-01

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature—crystalline or amorphous—of the substrate.

Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Taiki; Kuribara, Kazunori; Yoshida, Manabu

2018-05-01

We have fabricated an amorphous indium–zinc oxide (IZO, In/Zn = 3/1) semiconductor thin-film transistor (AOS-TFT) by the sol–gel technique using ultraviolet (UV) photoirradiation and post-treatment in high-pressure O2 at 200 °C. The obtained TFT showed a hole carrier mobility of 0.02 cm2 V‑1 s‑1 and an on/off current ratio of 106. UV photoirradiation leads to the decomposition of the organic agents and hydroxide group in the IZO gel film. Furthermore, the post-treatment annealing at a high O2 pressure of more than 0.6 MPa leads to the filling of the oxygen vacancies in a poor metal–oxygen network in the IZO film.

Nanosphere lithography applied to magnetic thin films

NASA Astrophysics Data System (ADS)

Gleason, Russell

Magnetic nanostructures have widespread applications in many areas of physics and engineering, and nanosphere lithography has recently emerged as promising tool for the fabrication of such nanostructures. The goal of this research is to explore the magnetic properties of a thin film of ferromagnetic material deposited onto a hexagonally close-packed monolayer array of polystyrene nanospheres, and how they differ from the magnetic properties of a typical flat thin film. The first portion of this research focuses on determining the optimum conditions for depositing a monolayer of nanospheres onto chemically pretreated silicon substrates (via drop-coating) and the subsequent characterization of the deposited nanosphere layer with scanning electron microscopy. Single layers of permalloy (Ni80Fe20) are then deposited on top of the nanosphere array via DC magnetron sputtering, resulting in a thin film array of magnetic nanocaps. The coercivities of the thin films are measured using a home-built magneto-optical Kerr effect (MOKE) system in longitudinal arrangement. MOKE measurements show that for a single layer of permalloy (Py), the coercivity of a thin film deposited onto an array of nanospheres increases compared to that of a flat thin film. In addition, the coercivity increases as the nanosphere size decreases for the same deposited layer. It is postulated that magnetic exchange decoupling between neighboring nanocaps suppresses the propagation of magnetic domain walls, and this pinning of the domain walls is thought to be the primary source of the increase in coercivity.

Fabrication and etching processes of silicon-based PZT thin films

NASA Astrophysics Data System (ADS)

Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

2001-09-01

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Line-source excited impulsive EM field response of thin plasmonic metal films

NASA Astrophysics Data System (ADS)

Štumpf, Martin; Vandenbosch, Guy A. E.

2013-08-01

In this paper, reflection against and transmission through thin plasmonic metal films, basic building blocks of many plasmonic devices, are analytically investigated directly in the time domain for an impulsive electric and magnetic line-source excitation. The electromagnetic properties of thin metallic films are modeled via the Drude model. The problem is formulated with the help of approximate thin-sheet boundary conditions and the analysis is carried out using the Cagniard-DeHoop technique. Closed-form space-time expressions are found and discussed. The obtained time-domain analytical expressions reveal the existence of the phenomenon of transient oscillatory surface effects along a plasmonic metal thin sheet. Illustrative numerical examples of transmitted/reflected pulsed fields are provided.

Determination of diffusion coefficients in polypyrrole thin films using a current pulse relaxation method

NASA Technical Reports Server (NTRS)

Penner, Reginald M.; Vandyke, Leon S.; Martin, Charles R.

1987-01-01

The current pulse E sub oc relaxation method and its application to the determination of diffusion coefficients in electrochemically synthesized polypyrrole thin films is described. Diffusion coefficients for such films in Et4NBF4 and MeCN are determined for a series of submicron film thicknesses. Measurement of the double-layer capacitance, C sub dl, and the resistance, R sub u, of polypyrrole thin films as a function of potential obtained with the galvanostatic pulse method is reported. Measurements of the electrolyte concentration in reduced polypyrrole films are also presented to aid in the interpretation of the data.

Photon synthesis of iron oxide thin films for thermo-photo-chemical sensors

NASA Astrophysics Data System (ADS)

Mulenko, S. A.; Petrov, Yu. N.; Gorbachuk, N. T.

2012-09-01

Ultraviolet photons of KrF-laser (248 nm) and of photodiode (360 nm) were used for the synthesis of iron oxide thin films with variable thickness, stoichiometry and electrical properties. The reactive pulsed laser deposition (RPLD) method was based on KrF-laser and photon-induced chemical vapor deposition (PCVD) was based on a photodiode. Deposited films demonstrated semiconductor properties with variable band gap (Eg). The film thickness (50-140 nm) and Eg depended on the laser pulse number, oxygen and iron carbonyl vapor pressure in the deposition chamber, and exposure time to the substrate surface with ultraviolet (UV) radiation. Sensing characteristics strongly depended on electrical and structural properties of such thin films. Iron oxide films were deposited on <1 0 0> Si substrate and had large thermo electromotive force (e.m.f.) coefficient (S) and high photosensitivity (F). The largest value of the S coefficient obtained by RPLD was about 1.65 mV/K in the range 270-290 K and by PCVD was about 1.5 mV/K in the range 280-322 K. The largest value F obtained by RPLD and PCVD was about 44 Vc/W and 40 Vc/W, accordingly, for white light at power density (I ≅ 0.006 W/cm2). It was shown that the S coefficient and F strongly depended on Eg. Moreover, these films were tested as chemical sensors: the largest sensitivity of NO molecules was at the level of 3 × 1012 cm-3. Our results showed that RPLD and PCVD were used to synthesize semiconductor iron oxide thin films with different sensing properties. So iron oxide thin films synthesized by UV photons are up-to-date materials for multi-parameter sensors: thermo-photo-chemical sensors operating at moderate temperature.

Thin films of mixed metal compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Pulsed laser deposition and characterization of cellulase thin films

NASA Astrophysics Data System (ADS)

Cicco, N.; Morone, A.; Verrastro, M.; Viggiano, V.

2013-08-01

Thin films of cellulase were obtained by pulsed laser deposition (PLD) on an appropriate substrate. Glycoside hydrolase cellulase has received our attention because it emerges among the antifouling enzymes (enzymes being able to remove and prevent the formation of micro-organism biofilms) used in industry and medicine field. Pressed cellulase pellets, used as target material, were ablated with pulses of a Nd-YAG laser working at wavelength of 532 nm. In this work, we evaluated the impact of PLD technique both on molecular structure and hydrolytic activity of cellulase. Characteristic chemical bonds and morphology of deposited layers were investigated by FTIR spectroscopy and SEM respectively. The hydrolytic activity of cellulase thin films was detected by a colorimetric assay.

Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics.

PubMed

Choi, Hyeongsu; Lee, Jeongsu; Shin, Seokyoon; Lee, Juhyun; Lee, Seungjin; Park, Hyunwoo; Kwon, Sejin; Lee, Namgue; Bang, Minwook; Lee, Seung-Beck; Jeon, Hyeongtag

2018-05-25

Representative tin sulfide compounds, tin monosulfide (SnS) and tin disulfide (SnS 2 ) are strong candidates for future nanoelectronic devices, based on non-toxicity, low cost, unique structures and optoelectronic properties. However, it is insufficient for synthesizing of tin sulfide thin films using vapor phase deposition method which is capable of fabricating reproducible device and securing high quality films, and their device characteristics. In this study, we obtained highly crystalline SnS thin films by atomic layer deposition and obtained highly crystalline SnS 2 thin films by phase transition of the SnS thin films. The SnS thin film was transformed into SnS 2 thin film by annealing at 450 °C for 1 h in H 2 S atmosphere. This phase transition was confirmed by x-ray diffractometer and x-ray photoelectron spectroscopy, and we studied the cause of the phase transition. We then compared the film characteristics of these two tin sulfide thin films and their switching device characteristics. SnS and SnS 2 thin films had optical bandgaps of 1.35 and 2.70 eV, and absorption coefficients of about 10 5 and 10 4 cm -1 in the visible region, respectively. In addition, SnS and SnS 2 thin films exhibited p-type and n-type semiconductor characteristics. In the images of high resolution-transmission electron microscopy, SnS and SnS 2 directly showed a highly crystalline orthorhombic and hexagonal layered structure. The field effect transistors of SnS and SnS 2 thin films exhibited on-off drain current ratios of 8.8 and 2.1 × 10 3 and mobilities of 0.21 and 0.014 cm 2 V -1 s -1 , respectively. This difference in switching device characteristics mainly depends on the carrier concentration because it contributes to off-state conductance and mobility. The major carrier concentrations of the SnS and SnS 2 thin films were 6.0 × 10 16 and 8.7 × 10 13 cm -3 , respectively, in this experiment.

Thin-Film Power Transformers

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

Oxide-based thin film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

2018-01-01

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

Magnetic damping phenomena in ferromagnetic thin-films and multilayers

NASA Astrophysics Data System (ADS)

Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

2017-11-01

Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

NASA Astrophysics Data System (ADS)

Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

2015-11-01

The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

Chalcogenide thin films deposited by rfMS technique using a single quaternary target

NASA Astrophysics Data System (ADS)

Prepelita, P.; Stavarache, I.; Negrila, C.; Garoi, F.; Craciun, V.

2017-12-01

Thin films of chalcogenide, Cu(In,Ga)Se2 have been obtained using a single quaternary target by radio frequency magnetron sputtering method, with thickness in the range 750 nm to 1200 nm. X-ray photoelectron spectroscopy investigations showed, that the composition of Cu(In,Ga)Se2 thin films was very similar to that of the used target CuIn0.75Ga0.25Se2. Identification of the chemical composition of Cu(In,Ga)Se2 thin films by XPS performed in high vacuum, emphasized that the samples exhibit surface features suitable to be integrated into the structure of solar cells. Atomic Force Microscopy and Scanning Electron Microscopy investigations showed that surface morphology was influenced by the increase in thickness of the Cu(In,Ga)Se2 layer. From X-Ray Diffraction investigations it was found that all films were polycrystalline, having a tetragonal lattice with a preferential orientation along the (112) direction. The optical reflectance as a function of wavelength was measured for the studied samples. The increase in thickness of the Cu(In,Ga)Se2 absorber determined a decrease of its optical bandgap value from 1.53 eV to 1.44 eV. The results presented in this paper showed an excellent alternative of obtaining Cu(In,Ga)Se2 compound thin films from a single target.

An acetate precursor process for BSCCO (2223) thin films and coprecipitated powders

NASA Technical Reports Server (NTRS)

Haertling, Gene H.

1992-01-01

Since the discovery of high temperature superconducting oxides much attention has been paid to finding better and useful ways to take advantage of the special properties exhibited by these materials. One such process is the development of thin films for engineering applications. Another such process is the coprecipitation route to producing superconducting powders. An acetate precursor process for use in thin film fabrication and a chemical coprecipitation route to Bismuth based superconducting materials has been developed. Data obtained from the thin film process were inconclusive to date and require more study. The chemical coprecipitation method of producing bulk material is a viable method, and is preferred over the previously used solid state route. This method of powder production appears to be an excellent route to producing thin section tape cast material and screen printed devices, as it requires less calcines than the oxide route to produce quality powders.

Thin film polarizer and color filter based on photo-polymerizable nematic liquid crystal

NASA Astrophysics Data System (ADS)

Mohammadimasoudi, Mohammad; Neyts, Kristiaan; Beeckman, Jeroen

2015-03-01

We present a method to fabricate a thin film color filter based on a mixture of photo-polymerizable liquid crystal and chiral dopant. A chiral nematic liquid crystal layer reflects light for a certain wavelength interval Δλ (= Δn.P) with the period and Δn the birefringence of the liquid crystal. The reflection band is determined by the chiral dopant concentration. The bandwidth is limited to 80nm and the reflectance is at most 50% for unpolarized incident light. The thin color filter is interesting for innovative applications like polarizer-free reflective displays, polarization-independent devices, stealth technologies, or smart switchable reflective windows to control solar light and heat. The reflected light has strong color saturation without absorption because of the sharp band edges. A thin film polarizer is developed by using a mixture of photo-polymerizable liquid crystal and color-neutral dye. The fabricated thin film absorbs light that is polarized parallel to the c axis of the LC. The obtained polarization ratio is 80% for a film of only 12 μm. The thin film polarizer and the color filter feature excellent film characteristics without domains and can be detached from the substrate which is useful for e.g. flexible substrates.

Performance and Durability of Thin Film Thermocouple Array on a Porous Electrode.

PubMed

Guk, Erdogan; Ranaweera, Manoj; Venkatesan, Vijay; Kim, Jung-Sik

2016-08-23

Management of solid oxide fuel cell (SOFC) thermal gradients is vital to limit thermal expansion mismatch and thermal stress. However, owing to harsh operation conditions of SOFCs and limited available space in stack configuration, the number of techniques available to obtain temperature distribution from the cell surface is limited. The authors previously developed and studied a thermocouple array pattern to detect surface temperature distribution on an SOFC in open circuit conditions. In this study, the performance in terms of mechanical durability and oxidation state of the thin film thermoelements of the thermocouple array on the porous SOFC cathode is investigated. A thin-film multi-junction thermocouple array was sputter deposited using a magnetron sputter coater. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterisation techniques were carried out to understand characteristics of the thin film before and after temperature (20 °C-800 °C) measurement. Temperature readings from the sensor agreed well with the closely placed commercial thermocouple during heating segments. However, a sensor failure occurred at around 350 °C during the cooling segment. The SEM and XPS tests revealed cracks on the thin film thermoelements and oxidation to the film thickness direction.

Performance and Durability of Thin Film Thermocouple Array on a Porous Electrode

PubMed Central

Guk, Erdogan; Ranaweera, Manoj; Venkatesan, Vijay; Kim, Jung-Sik

2016-01-01

Management of solid oxide fuel cell (SOFC) thermal gradients is vital to limit thermal expansion mismatch and thermal stress. However, owing to harsh operation conditions of SOFCs and limited available space in stack configuration, the number of techniques available to obtain temperature distribution from the cell surface is limited. The authors previously developed and studied a thermocouple array pattern to detect surface temperature distribution on an SOFC in open circuit conditions. In this study, the performance in terms of mechanical durability and oxidation state of the thin film thermoelements of the thermocouple array on the porous SOFC cathode is investigated. A thin-film multi-junction thermocouple array was sputter deposited using a magnetron sputter coater. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) characterisation techniques were carried out to understand characteristics of the thin film before and after temperature (20 °C–800 °C) measurement. Temperature readings from the sensor agreed well with the closely placed commercial thermocouple during heating segments. However, a sensor failure occurred at around 350 °C during the cooling segment. The SEM and XPS tests revealed cracks on the thin film thermoelements and oxidation to the film thickness direction. PMID:27563893

Diamond Thin-Film Thermionic Generator

NASA Astrophysics Data System (ADS)

Clewell, J. M.; Ordonez, C. A.; Perez, J. M.

1997-03-01

Since the eighteen-hundreds scientists have sought to develop the highest thermal efficiency in heat engines such as thermionic generators. Modern research in the emerging diamond film industry has indicated the work functions of diamond thin-films can be much less than one electron volt, compelling fresh investigation into their capacity as thermionic generators and inviting new methodology for determining that efficiency. Our objective is to predict the efficiency of a low-work-function, degenerate semiconductor (diamond film) thermionic generator operated as a heat engine between two constant-temperature thermal reservoirs. Our presentation will focus on a theoretical model which predicts the efficiency of the system by employing a Monte Carlo computational technique from which we report results for the thermal efficiency and the thermionic current densities of diamond thin-films.

Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-05-01

In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

Broadband complex permeability characterization of magnetic thin films using shorted microstrip transmission-line perturbation

NASA Astrophysics Data System (ADS)

Liu, Yan; Chen, Linfeng; Tan, C. Y.; Liu, H. J.; Ong, C. K.

2005-06-01

A brief review of the methods used for broadband complex permeability measurement of magnetic thin films up to microwave frequencies is given. In particular, the working principles of the transmission-line perturbation methods for the characterization of magnetic thin films are discussed, with emphasis on short-circuited planar transmission-line perturbation methods. The algorithms for calculating the complex permeability of magnetic thin films for short-circuited planar transmission-line perturbation methods are analyzed. A shorted microstrip line is designed and fabricated as a prototype measurement fixture. The structure of the microstrip fixture and the corresponding measurement procedure are discussed in detail. A piece of 340 nm thick FeTaN thin film deposited on Si substrate using sputtering method is characterized using the microstrip fixture. An improved technique for obtaining permeability by using a saturation magnetization field is demonstrated here, and the results fit well with the Landau-Lifchitz-Gilbert theory. Approaches to extending this method to other aspects in the investigation of magnetic thin film are also discussed.

All-Ceramic Thin Film Battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

BOYLE, TIMOTHY J.; INGERSOLL, DAVID; CYGAN, RANDALL T.

2002-11-01

We have undertaken the synthesis of a thin film ''All Ceramic Battery'' (ACB) using solution route processes. Based on the literature and experimental results, we selected SnO{sub 2}, LiCoO{sub 2}, and LiLaTiO{sub 3} (LLT) as the anode, cathode, and electrolyte, respectively. Strain induced by lattice mismatch between the cathode and bottom electrode, as estimated by computational calculations, indicate that thin film orientations for batteries when thicknesses are as low as 500 {angstrom} are strongly controlled by surface energies. Therefore, we chose platinized silicon as the basal platform based on our previous experience with this material. The anode thin films weremore » generated by standard spin-cast methods and processing using a solution of [Sn(ONep)]{sub 8} and HOAc which was found to form Sn{sub 6}(O){sub 4}(ONep){sub 4}. Electrochemical evaluation showed that the SnO{sub 2} was converted to Sn{sup o} during the first cycle. The cathode was also prepared by spin coating using the novel [Li(ONep)]{sub 8} and Co(OAc){sub 2}. The films could be electrochemically cycled (i.e., charged/discharged), with all of the associated structural changes being observable by XRD. Computational models indicated that the LLT electrolyte would be the best available ceramic material for use as the electrolyte. The LLT was synthesized from [Li(ONep)]{sub 8}, [Ti(ONep){sub 4}]{sub 2}, and La(DIP){sub 3}(py){sub 3} with RTP processing at 900 C being necessary to form the perovskite phase. Alternatively, a novel route to thin films of the block co-polymer ORMOLYTE was developed. The integration of these components was undertaken with each part of the assembly being identifiably by XRD analysis (this will allow us to follow the progress of the charge/discharge cycles of the battery during use). SEM investigations revealed the films were continuous with minimal mixing. All initial testing of the thin-film cathode/electrolyte/anode ACB devices revealed electrical shorting

Development of a liquid lithium thin film for use as a heavy ion beam stripper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Momozaki, Y.; Nolen, J.; Reed, C.

2009-04-01

A series of experiments was performed to investigate the feasibility of a liquid lithium thin film for a charge stripper in a high-power heavy ion linac. Various preliminary experiments using simulants were first conducted to determine the film formation scheme, to investigate the film stability, and to obtain the design parameters for a liquid lithium thin film system. Based on the results from these preliminary studies, a prototypical, high pressure liquid lithium system was constructed to demonstrate liquid lithium thin film formation. This system was capable of driving liquid lithium at {approx}< 300 C and up to 13.9 MPa (2000more » psig) through a nozzle opening as large as 1 mm (40 mil) in diameter. This drive pressure corresponds to a Li velocity of >200 m/s. A thin lithium film of 9 mm in width at velocity of {approx}58 m/s was produced. Its thickness was estimated to be roughly {approx}< 13 {micro}m. High vacuum was maintained in the area of the film. This type of liquid metal thin film may also be used in other high power beam applications such as for intense X-ray or neutron sources.« less

Glass transition dynamics of stacked thin polymer films

NASA Astrophysics Data System (ADS)

Fukao, Koji; Terasawa, Takehide; Oda, Yuto; Nakamura, Kenji; Tahara, Daisuke

2011-10-01

The glass transition dynamics of stacked thin films of polystyrene and poly(2-chlorostyrene) were investigated using differential scanning calorimetry and dielectric relaxation spectroscopy. The glass transition temperature Tg of as-stacked thin polystyrene films has a strong depression from that of the bulk samples. However, after annealing at high temperatures above Tg, the stacked thin films exhibit glass transition at a temperature almost equal to the Tg of the bulk system. The α-process dynamics of stacked thin films of poly(2-chlorostyrene) show a time evolution from single-thin-film-like dynamics to bulk-like dynamics during the isothermal annealing process. The relaxation rate of the α process becomes smaller with increase in the annealing time. The time scale for the evolution of the α dynamics during the annealing process is very long compared with that for the reptation dynamics. At the same time, the temperature dependence of the relaxation time for the α process changes from Arrhenius-like to Vogel-Fulcher-Tammann dependence with increase of the annealing time. The fragility index increases and the distribution of the α-relaxation times becomes smaller with increase in the annealing time for isothermal annealing. The observed change in the α process is discussed with respect to the interfacial interaction between the thin layers of stacked thin polymer films.

Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

NASA Astrophysics Data System (ADS)

Wang, Bin; Lai, Jianjun; Li, Hui; Hu, Haoming; Chen, Sihai

2013-03-01

In order to obtain high quality of thermal sensitive material, VOx thin film of high temperature coefficient of resistance (TCR) of 6.5%/K at room temperature has been deposited by reactive ion beam sputtering and post annealing method. AFM and XRD measurements indicate that the VOx thin film with nanostructured crystalline is composed of VO2 and V2O3. The nanostructured VOx microbolometer has been designed and fabricated. The measurement of the film system with TiN absorbing layer indicates that it has about 92% infrared absorption in the range of 8-14 μm. The performance of this bolometer, comparing with that of bolometer with common VOx, has a better result. At 20 Hz frequency and 10 μA bias current, the bolometer with high TCR has reached detectivity of 1.0 × 109 cm Hz1/2/W. It also indicates that this nanostructured VOx thin film has not only a higher TCR but also a lower noise than common VOx thin film without annealing.

Synthesis, characterization, and photocatalytic properties of nanocrystalline NZO thin films

NASA Astrophysics Data System (ADS)

Aryanto, D.; Hastuti, E.; Husniya, N.; Sudiro, T.; Nuryadin, B. W.

2018-03-01

Nanocrystalline Ni-doped ZnO (NZO) thin films were synthesized on glass substrate using sol-gel spin coating methods. The effect of annealing on the structural and optical properties of nanocrystalline thin film was studied using X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), UV-VIS spectrophotometry, and photoluminescence (PL). The results showed that the annealing temperature strongly influenced the physical properties of nanocrystalline NZO thin films. The photocatalytic properties of nanocrystalline NZO thin films were evaluated using an aqueous solution of Rhodamine-B. The photocatalytic activity of nanocrystalline NZO thin films increased with the increase of annealing temperature. The results indicated that the structure, morphology, and band gap energy of nanocrystalline NZO thin films played an important role in photocatalytic activity.

Electrolyte and Electrode Passivation for Thin Film Batteries

NASA Technical Reports Server (NTRS)

West, W.; Whitacre, J.; Ratnakumar, B.; Brandon, E.; Blosiu, J.; Surampudi, S.

2000-01-01

Passivation films for thin film batteries have been prepared and the conductivity and voltage stability window have been measured. Thin films of Li2CO3 have a large voltage stability window of 4.8V, which facilitates the use of this film as a passivation at both the lithium anode-electrolyte interface at high cathodic potentials.

Simulated Thin-Film Growth and Imaging

NASA Astrophysics Data System (ADS)

Schillaci, Michael

2001-06-01

Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

Thin film mechanics

NASA Astrophysics Data System (ADS)

Cooper, Ryan C.

This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

Thin film ceramic thermocouples

NASA Technical Reports Server (NTRS)

Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

2011-01-01

A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Thin film resonator technology.

PubMed

Lakin, Kenneth M

2005-05-01

Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

Demonstration of thin film pair distribution function analysis (tfPDF) for the study of local structure in amorphous and crystalline thin films

PubMed Central

Jensen, Kirsten M. Ø.; Blichfeld, Anders B.; Bauers, Sage R.; Wood, Suzannah R.; Dooryhée, Eric; Johnson, David C.; Iversen, Bo B.; Billinge, Simon J. L.

2015-01-01

By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF) analysis have been obtained from thin films (tf), suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The ‘tfPDF’ method is illustrated through studies of as-deposited (i.e. amorphous) and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films. PMID:26306190

Iron-Terephthalate Coordination Network Thin Films Through In-Situ Atomic/Molecular Layer Deposition.

PubMed

Tanskanen, A; Karppinen, M

2018-06-12

Iron terephthalate coordination network thin films can be fabricated using the state-of-the-art gas-phase atomic/molecular layer deposition (ALD/MLD) technique in a highly controlled manner. Iron is an Earth-abundant and nonhazardous transition metal, and with its rich variety of potential applications an interesting metal constituent for the inorganic-organic coordination network films. Our work underlines the role of the metal precursor used when aiming at in-situ ALD/MLD growth of crystalline inorganic-organic thin films. We obtain crystalline iron terephthalate films when FeCl 3 is employed as the iron source whereas depositions based on the bulkier Fe(acac) 3 precursor yield amorphous films. The chemical composition and structure of the films are investigated with GIXRD, XRR, FTIR and XPS.

Supersonic plasma outflow in a plasmochemical method of amorphous silicon thin films formation

NASA Astrophysics Data System (ADS)

Baranova, L. V.; Strunin, V. I.; Khudaibergenov, G. Zh

2018-01-01

As a result of the numerical modeling of gasdynamic functions of a nozzle of Laval there obtained its parameters which form supersonic plasma jet outflow in a process of amorphous silicon thin films deposition. According to the nozzle design parameters, there obtained amorphous silicon thin films and studied uniformity of the thickness of the synthesized coatings. It was also performed that due to a low translational temperature at the nozzle exit the relaxation losses reduce significantly, “freezing” the vibrational degrees of freedom and the degrees of freedom of the transverse motion of the particles, and increasing the energy efficiency of the film formation process. All this is caused by the fact that on the surface of a growing film only the products of primary interaction of electrons with molecules of a silicon-containing gas in the plasmatron do interact.

Charge carrier transport in polycrystalline organic thin film based field effect transistors

NASA Astrophysics Data System (ADS)

Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

2016-05-01

The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

NASA Astrophysics Data System (ADS)

Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

2017-11-01

In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells.[Figure not available: see fulltext.

A generalized theory of thin film growth

NASA Astrophysics Data System (ADS)

Du, Feng; Huang, Hanchen

2018-03-01

This paper reports a theory of thin film growth that is generalized for arbitrary incidence angle during physical vapor deposition in two dimensions. The accompanying kinetic Monte Carlo simulations serve as verification. A special theory already exists for thin film growth with zero incidence angle, and another theory also exists for nanorod growth with a glancing angle. The theory in this report serves as a bridge to describe the transition from thin film growth to nanorod growth. In particular, this theory gives two critical conditions in analytical form of critical coverage, ΘI and ΘII. The first critical condition defines the onset when crystal growth or step dynamics stops following the wedding cake model for thin film growth. The second critical condition defines the onset when multiple-layer surface steps form to enable nanorod growth. Further, this theory also reveals a critical incidence angle, below which nanorod growth is impossible. The critical coverages, together with the critical incidence angle, defines a phase diagram of thin growth versus nanorod growth.

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

Thin-Film Photovoltaics: Status and Applications to Space Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hepp, Aloysius F.

1991-01-01

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

Thin film solar energy collector

DOEpatents

Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

1983-11-22

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

NASA Astrophysics Data System (ADS)

Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

2016-07-01

Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

Ultra-high power capabilities in amorphous FePO4 thin films

NASA Astrophysics Data System (ADS)

Gandrud, Knut B.; Nilsen, Ola; Fjellvåg, Helmer

2016-02-01

Record breaking electrochemical properties of FePO4 have been found through investigation of the thickness dependent electrochemical properties of amorphous thin film electrodes. Atomic layer deposition was used for production of thin films of amorphous FePO4 with highly accurate thickness and topography. Electrochemical characterization of these thin film electrodes revealed that the thinner electrodes behave in a pseudocapacitive manner even at high rates of Li+ de/intercalation, which enabled specific powers above 1 MW kg-1 FePO4 to be obtained with minimal capacity loss. In addition, a self-enhancing kinetic effect was observed during cycling enabling more than 10,000 cycles at current rates approaching that of a supercapacitor (11s charge/discharge). The current findings may open for construction of ultra-high power battery electrodes that combines the energy density of batteries with the power capabilities of supercapacitors.

Electron Damage Effects on Carbon Nanotube Thin Films

DTIC Science & Technology

2013-03-01

ELECTRON DAMAGE EFFECTS ON CARBON NANOTUBE THIN FILMS THESIS Jeremy S. Best, Captain, USMC AFIT-ENP-13-M-37 DEPARTMENT OF THE AIR FORCE AIR...Government and is not subject to copyright protection in the United States. AFIT-ENP-13-M-37 ELECTRON DAMAGE EFFECTS ON CARBON NANOTUBE THIN FILMS...M-37 ELECTRON DAMAGE EFFECTS ON CARBON NANOTUBE THIN FILMS Jeremy S. Best, BS Aerospace Engineering Captain, USMC Approved: Dr. John McClory

Methods for fabricating thin film III-V compound solar cell

DOEpatents

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Tin-dioxide nanocrystals as Er3+ luminescence sensitizers: Formation of glass-ceramic thin films and their characterization

NASA Astrophysics Data System (ADS)

Zur, Lidia; Tran, Lam Thi Ngoc; Meneghetti, Marcello; Tran, Van Thi Thanh; Lukowiak, Anna; Chiasera, Alessandro; Zonta, Daniele; Ferrari, Maurizio; Righini, Giancarlo C.

2017-01-01

Silica-tin dioxide thin films doped with Er3+ ions were fabricated and investigated. Different parameters such as heat-treatment temperatures, molar concentrations of SnO2 as well as Er3+ ions concentration were changed in order to obtain the best properties of presented thin films. Using several techniques, thin films were characterized and proved to be crack-free, water-free and smooth after a heat-treatment at 1200 °C. Aiming to application in optics, the transparency of thin films was also evidenced by transmission spectra. Based on the photoluminescence measurements, the mechanism of energy transfer from SnO2 nanocrystals to Er3+ ions was examined and discussed.

Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes

NASA Astrophysics Data System (ADS)

Sun, Y.; Ashida, K.; Sasaki, S.; Koyama, M.; Maemoto, T.; Sasa, S.; Kasai, S.; Iñiguez-de-la-Torre, I.; González, T.

2015-10-01

Fully transparent zinc oxide (ZnO) based thin-film transistors (TFTs) and a new type of rectifiers calls self-switching nano-diodes (SSDs) were fabricated on glass substrates at room temperature by using low resistivity and transparent conducting Al- doped ZnO (AZO) thin-films. The deposition conditions of AZO thin-films were optimized with pulsed laser deposition (PLD). AZO thin-films on glass substrates were characterized and the transparency of 80% and resistivity with 1.6*10-3 Ωcm were obtained of 50 nm thickness. Transparent ZnO-TFTs were fabricated on glass substrates by using AZO thin-films as electrodes. A ZnO-TFT with 2 μm long gate device exhibits a transconductance of 400 μS/mm and an ON/OFF ratio of 2.8*107. Transparent ZnO-SSDs were also fabricated by using ZnO based materials and clear diode-like characteristics were observed.

Chemical vapor deposition of Mo thin films from Mo(CO){sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, P.; Bond, J.; Westmore, T.

1995-12-01

Low levels of carbon and/or oxygen contamination in metallic thin films significantly alter the physical and chemical properties of these films often rendering them useless for any commercial applications. These impurities are often observed in films grown by a technique called metallorganic chemical vapor deposition (MOCVD). MOCVD films are grown by heating a substrate in the presence of a metallorganic precursor. We wish to identify the source(s) of contamination in films produced from the Group VIB metal hexacarbonyls, M(CO){sub 6}. Towards attaining this goal we have initiated studies on the elemental composition of thin films deposited by MOCVD using Mo(CO){submore » 6} as the precursor. The results obtained so far indicate that the level of contamination of the films partially depends on the deposition temperature. Our results will be compared to published work on films deposited by laser assisted CVD from Mo(CO){sub 6}.« less

Novel photon management for thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menon, Rajesh

2016-11-11

The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Synthesis and optical characterization of ternary chalcogenide Cu3BiS3 thin film by spin coating

NASA Astrophysics Data System (ADS)

Rawal, Neha; Hadi, Mohammed Kamal; Modi, B. P.

2017-05-01

In this work, ternary Chalcogenide Cu3BiS3(CBS) thin films have been prepared and modified by using spin coating technique. Lucratively, spin coating technique is easy going and simple though it hasn't given an enclosure and extensive focus of researches for Cu3BiS3 thin films formation. The surface smoothness and the homogeneity of the obtained thin films have been optimized throughout varying the annealing temperature, concentration and rotation speed. It had been found that as prepared films the value of the energy band gap is 1.4 eV, the absorption coefficient 105 cm-1. Each values of the EBG (Energy Band Gap) and AC (Absorption coefficient) was found in quite agreement with the published work of CBS thin film formation by other methods as CBD, dip coating etc. It signifies that Cu3BiS3 films can be used as an absorber layer for thin film solar cell.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

NASA Astrophysics Data System (ADS)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Synthesis and electrochemical property of LiCoO 2 thin films composed of nanosize compounds synthesized via nanosheet restacking method

NASA Astrophysics Data System (ADS)

Quan, Zhen; Iwase, Kosuke; Sonoyama, Noriyuki

LiCoO 2 thin films with nanosize particles were synthesized on Au substrates by nanosheet restacking method and subsequent hydrothermal reaction which needs less cost than the vacuum deposition methods. The grain size of LiCoO 2 films estimated by XRD reflection was about 15 nm that was independent of the thickness of precursor cobalt hydroxide film. Comparing the rate performance of the thin films with various thickness, the optimum performance was obtained by the thin film with 5 min deposition time: 62% of the capacity was held at 400 C-rate compared with that at 20 C-rate. The results of AC-impedance analysis of electrode reaction indicate that the high rate capability of the LiCoO 2 film is obtained by the small grain size and large surface area of LiCoO 2 thin film with nano size particles.

Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

NASA Astrophysics Data System (ADS)

Isik, Dilek

This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

Synthesis and characterization of nanostructured bismuth selenide thin films.

PubMed

Sun, Zhengliang; Liufu, Shengcong; Chen, Lidong

2010-12-07

Nanostructured bismuth selenide thin films have been successfully fabricated on a silicon substrate at low temperature by rational design of the precursor solution. Bi(2)Se(3) thin films were constructed of coalesced lamella in the thickness of 50-80 nm. The nucleation and growth process of Bi(2)Se(3) thin films, as well as the influence of solution chemistry on the film structure were investigated in detail. As one of the most promising thermoelectric materials, the thermoelectric properties of the prepared Bi(2)Se(3) thin films were also investigated. The power factor increased with increasing carrier mobility, coming from the enlarged crystallites and enhanced coalesced structure, and reached 1 μW cm(-1) K(-1).

Ovonic type switching in tin selenide thin films

NASA Technical Reports Server (NTRS)

Baxter, C. R.; Mclennan, W. D.

1975-01-01

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Pulsed photonic fabrication of nanostructured metal oxide thin films

NASA Astrophysics Data System (ADS)

Bourgeois, Briley B.; Luo, Sijun; Riggs, Brian C.; Adireddy, Shiva; Chrisey, Douglas B.

2017-09-01

Nanostructured metal oxide thin films with a large specific surface area are preferable for practical device applications in energy conversion and storage. Herein, we report instantaneous (milliseconds) photonic synthesis of three-dimensional (3-D) nanostructured metal oxide thin films through the pulsed photoinitiated pyrolysis of organometallic precursor films made by chemical solution deposition. High wall-plug efficiency-pulsed photonic irradiation (xenon flash lamp, pulse width of 1.93 ms, fluence of 7.7 J/cm2 and frequency of 1.2 Hz) is used for scalable photonic processing. The photothermal effect of subsequent pulses rapidly improves the crystalline quality of nanocrystalline metal oxide thin films in minutes. The following paper highlights pulsed photonic fabrication of 3-D nanostructured TiO2, Co3O4, and Fe2O3 thin films, exemplifying a promising new method for the low-cost and high-throughput manufacturing of nanostructured metal oxide thin films for energy applications.

Thickness Measurement, Rate Control And Automation In Thin Film Coating Technology

NASA Astrophysics Data System (ADS)

Pulker, H. K.

1983-11-01

There are many processes known for fabricating thin films/1, 2.Among them the group of physical vapor deposition processes comprising evaporation, sputtering and ion plating has received special attention.Especially evaporation but also the other PVD techniques are widely used to deposit various single and multilayer coatings for optical and electrical thin film applications/3,4/.A large number of parameters is important in obtaining the required film properties in a reproducible manner when depositing thin films by such processes.Amongst the many are the film thickness, the condensation rate,the substrate temperature,as well as the qualitative and the quantitative composition of the residual gas of primary importance.First of all the film thickness is a dimension which enters in practically all equations used to characterize a thin film. However,when discussing film thickness,definitions are required since there one has to distinguish between various types of thicknesses e.g.geometrical thickness,mass thickness and optical thickness.The geometrical thickness,often also called physical thickness,is defined as the step height between the substrate surface and the film surface.This step height multiplied by the refractive index of the film is termed the optical thickness and is expressed generally in integer multiples of fractional parts of a desired wavelength.The mass thickness finally is defined as the film mass per unit area obtained by weighing.Knowing the density and the optical data of a thin film its mass thickness can be converted into the corresponding geometrical as well as optical thickness.However,with ultrathin films ranging between a few and several atomic or molecular "layers"the concept of a film thickness may become senseless since often no closed film exists of such minor deposits.Although film thickness is a length,the measurement of it can,obviously,not be accomplished with conventional methods for length determinations but requires special

Emergent Topological Phenomena in Thin Films of Pyrochlore Iridates

NASA Astrophysics Data System (ADS)

Yang, Bohm-Jung; Nagaosa, Naoto

2014-06-01

Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

Drop impact on thin liquid films using TIRM

NASA Astrophysics Data System (ADS)

Pack, Min; Ying Sun Team

2015-11-01

Drop impact on thin liquid films is relevant to a number of industrial processes such as pesticide spraying and repellent surface research such as self-cleaning applications. In this study, we systematically investigate the drop impact dynamics on thin liquid films on plain glass substrates by varying the film thickness, viscosity and impact velocity. High speed imaging is used to track the droplet morphology and trajectory over time as well as observing instability developments at high Weber number impacts. Moreover, the air layer between the drop and thin film upon drop impact is probed by total internal reflection microscopy (TIRM) where the grayscale intensity is used to measure the air layer thickness and spreading radius over time. For low We impact on thick films (We ~ 10), the effect of the air entrainment is pronounced where the adhesion of the droplet to the wall is delayed by the air depletion and liquid film drainage, whereas for high We impact (We >100) the air layer is no longer formed and instead, the drop contact with the wall is limited only to the film drainage for all film thicknesses. In addition, the maximum spreading radius of the droplet is analyzed for varying thin film thickness and viscosity.

Thin-Film Thermocouple Technology Demonstrated for Reliable Heat Transfer Measurements

NASA Technical Reports Server (NTRS)

1996-01-01

Exploratory work is in progress to apply thin-film thermocouples to localized heat transfer measurements on turbine engine vanes and blades. The emerging thin-film thermocouple technology shows great potential to improve the accuracy of local heat transfer measurements. To verify and master the experimental methodology of thin-film thermocouples, the NASA Lewis Research Center conducted a proof-of-concept experiment in a controlled environment before applying the thin-film sensors to turbine tests.

Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

2016-06-01

Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

Micropatterning of TiO2 thin films by MOCVD and study of their growth tendency.

PubMed

Hwang, Ki-Hwan; Kang, Byung-Chang; Jung, Duk Young; Kim, Youn Jea; Boo, Jin-Hyo

2015-03-23

In this work, we studied the growth tendency of TiO2 thin films deposited on a narrow-stripe area (<10 μm). TiO2 thin films were selectively deposited on OTS patterned Si(100) substrates by MOCVD. The experimental data showed that the film growth tendency was divided into two behaviors above and below a line patterning width of 4 μm. The relationship between the film thickness and the deposited area was obtained as a function of f(x) = a[1 - e((-bx))]c. To find the tendency of the deposition rate of the TiO2 thin films onto the various linewidth areas, the relationship between the thickness of the TiO2 thin film and deposited linewidth was also studied. The thickness of the deposited TiO2 films was measured from the alpha-step profile analyses and cross-sectional SEM images. At the same time, a computer simulation was carried out to reveal the relationship between the TiO2 film thickness and deposited line width. The theoretical results suggest that the mass (velocity) flux in flow direction is directly affected to the film thickness.

Optimization of process parameters for RF sputter deposition of tin-nitride thin-films

NASA Astrophysics Data System (ADS)

Jangid, Teena; Rao, G. Mohan

2018-05-01

Radio frequency Magnetron sputtering technique was employed to deposit Tin-nitride thin films on Si and glass substrate at different process parameters. Influence of varying parameters like substrate temperature, target-substrate distance and RF power is studied in detail. X-ray diffraction method is used as a key technique for analyzing the changes in the stoichiometric and structural properties of the deposited films. Depending on the combination of deposition parameters, crystalline as well as amorphous films were obtained. Pure tin-nitride thin films were deposited at 15W RF power and 600°C substrate temperature with target-substrate distance fixed at 10cm. Bandgap value of 1.6 eV calculated for the film deposited at optimum process conditions matches well with reported values.

Development of plasma assisted thermal vapor deposition technique for high-quality thin film.

PubMed

Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

2016-12-01

The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10 -3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq -1 and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

Development of plasma assisted thermal vapor deposition technique for high-quality thin film

NASA Astrophysics Data System (ADS)

Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

2016-12-01

The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance <20 Ω sq-1 and a visible-range transmittance >75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

Calculation of optical band gaps of a-Si:H thin films by ellipsometry and UV-Vis spectrophotometry

NASA Astrophysics Data System (ADS)

Qiu, Yijiao; Li, Wei; Wu, Maoyang; Fu, Junwei; Jiang, Yadong

2010-10-01

Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.

Thermoelectric effects of amorphous Ga-Sn-O thin film

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Synthesis of LiCoO 2 thin films by sol/gel process

NASA Astrophysics Data System (ADS)

Porthault, H.; Le Cras, F.; Franger, S.

LiCoO 2 thin films were synthesized by sol/gel process using acrylic acid (AA) as chelating agent. The gel formulation was optimized by varying solvent (ethylene glycol or water) and precursors molar ratios (Li, Co, AA) in order to obtain a dense film for positive electrode of lithium batteries. The gel was deposited by spin-coating technique on an Au/TiO 2/SiN/SiO 2/Si substrate. Thin films were deposited by either single or multistep process to enhance the density of the thin film and then calcined during 5 h at 800 °C to obtain the R-3m phase (HT-LiCoO 2). A chemical characterization of the solution was realized by Fourier Transform Infrared (FTIR) spectroscopy. Thermal decomposition of precursors and gel was studied by Thermo Gravimetric Analyses (TGA). Further investigations were done to characterize rheologic behaviour of the gel and solvents affinity with the substrate. Crystallinity and morphology were analyzed respectively by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The formation of R-3m phase was confirmed by the electrochemical behaviour of the gel derived LiCoO 2. Cyclic voltammograms and galvanostatic cycling show typical curve shape of the HT-LiCoO 2.

Nonlinear optical thin films

NASA Technical Reports Server (NTRS)

Leslie, Thomas M.

1993-01-01

A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

AZO nanorods thin films by sputtering method

NASA Astrophysics Data System (ADS)

Rosli, A. B.; Shariffudin, S. S.; Awang, Z.; Herman, S. H.

2018-05-01

Al-doped zinc oxide (AZO) nanorods thin film were deposited on Au catalyst using RF sputtering at 300 °C. The 15 nm thickness Au catalyst were deposited on glass substrates by sputtering method followed by annealing for 15 min at 500 °C to form Au nanostructures on the glass substrate. The AZO thin films were then deposited on Au catalyst at different RF power ranging from 50 - 200 W. The morphology of AZO was characterized using Field Emission Scanning Electron Microscopy while X-ray Diffraction was used to examine crystallinity of AZO thin films. From this work, the AZO nanorods was found grow at 200 W RF power.

Effects of drying temperature on tomato-based thin film as self-powered UV photodetector

NASA Astrophysics Data System (ADS)

Thu, Myo Myo; Mastuda, Atsunori; Cheong, Kuan Yew

2018-07-01

In this work, tomato thin-film is used as an active natural organic layer for UV photodetector. The effects of drying temperature (60-140 °C) on structural, chemical, electrical and UV sensing properties of tomato thin-film have been investigated. The photodetector consists of a glass substrate/tomato thin-film active layer/interdigitated aluminium electrode structure. As the drying temperature increases, surface and density of tomato thin-film is smoother and denser with thinner physical thickness. Chemical functional groups as a function of drying temperature is evaluated and correlated with the electrical property of thin film. A comparison between dark and UV (B and C) illumination with respect to the electrical property has been revealed and the observation has been linked to the active chemical compounds that controlling antioxidant activity in the tomato. By drying the tomato thin-film at 120°C, a self-powered (V = 0 V) photodetector that is able to selectively detecting UV-C can be obtained with external quantum efficiency (η) of 2.53 × 10-7%. While drying it at 140 °C, the detector is better in detecting UV-B when operating at either 5 or -5 V with η of 7.7384 × 10-6% and 8.87 × 10-6%, respectively. The typical response time for raising and falling for all samples are less than 0.3 s.

Formation of ferromagnetic molecular thin films from blends by annealing

PubMed Central

Robaschik, Peter; Ma, Ye; Din, Salahud

2017-01-01

We report on a new approach for the fabrication of ferromagnetic molecular thin films. Co-evaporated films of manganese phthalocyanine (MnPc) and tetracyanoquinodimethane (TCNQ) have been produced by organic molecular beam deposition (OMBD) on rigid (glass, silicon) and flexible (Kapton) substrates kept at room temperature. The MnPc:TCNQ films are found to be entirely amorphous due to the size mismatch of the molecules. However, by annealing while covering the samples highly crystalline MnPc films in the β-polymorph can be obtained at 60 °C lower than when starting with pure MnPc films. The resulting films exhibit substantial coercivity (13 mT) at 2 K and a Curie temperature of 11.5 K. PMID:28900600

Drop impact onto a thin film: Miscibility effect

NASA Astrophysics Data System (ADS)

Chen, Ningli; Chen, H.; Amirfazli, A.

2017-09-01

In this work a systematic experimental study was performed to understand the process of liquid drop impact onto a thin film made of a different liquid from drop. The drop and film liquids can be miscible or immiscible. Three general outcomes of deposition, crown formation without splashing, and splashing, were observed in the advancing phase of the drop impact onto a solid surface covered by either a miscible or an immiscible thin film. However, for a miscible film, a larger Weber number and film thickness are needed for the formation of a crown and splashing comparing with immiscible cases. The advancing phase of drop impact onto a thin immiscible film with a large viscosity is similar to that of drop impact onto a dry surface; for a miscible film viscous film, the behavior is far from that of a dry surface. The behavior of liquid lamella in the receding phase of drop impact onto a thin miscible film is reported for the first time. The results show that immiscibility is not a necessary condition for the existence of a receding phase. The existence of a receding phase is highly dependent on the interfacial tension between the drop and the film. The miscibility can significantly affect the receding morphology as it will cause mixing of the two liquids.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Organic/carbon nanotubes hybrid thin films for chemical detection

NASA Astrophysics Data System (ADS)

Banimuslem, Hikmat Adnan

Metallophthalocyanines (MPcs) are classified as an important class of conjugated materials and they possess several advantages attributed to their unique chemical structure. Carbon nanotubes (CNT), on the other hand, are known to enhance the properties of nano-composites in the conjugated molecules, due to their one dimensional electronic skeleton, high surface area and high aspect ratio. In this thesis, work has been carried out on the investigation of different substituted metal-phthalocyanines with the aim of developing novel hybrid film structures which incorporates these phthalocyanines and single-walled carbon nanotubes (SWCNT) for chemical detection applications. Octa-substituted copper phthalocyanines (CuPcR[8]) have been characterised using UV-visible absorption spectroscopy. Obtained spectra have yielded an evidence of a thermally induced molecular reorganization in the films. Influence of the nature of substituents in the phthalocyanine molecule on the thin films conductivity was also investigated. Octa-substituted lead (II) phthalocyanines (PbPcR[8]) have also been characterized using UV-visible spectroscopy. Sandwich structures of ITO/PbPcR[8]/In were prepared to investigate the electronic conduction in PbPcR[8]. The variation in the J(V) behavior of the films as a result of heat treatment is expected to be caused by changes in the alignment inside the columnar stacking of the molecules of the films. Thin films of non-covalently hybridised SWCNT and tetra-substituted copper phthalocyanine (CuPcR[4]) molecules have been produced. FTIR, DC conductivity, SEM and AFM results have revealed the [mathematical equation]; interaction between SWCNTs and CuPCR[4] molecules and shown that films obtained from the acid-treated SWCNTs/CuPcR[4] hybrids demonstrated more homogenous surface. Thin films of pristine CuPCR[4] and CuPcR[4]/S WCNT were prepared by spin coating onto gold-coated glass slides and applied as active layers for the detection of benzo

Ferroelectric thin-film active sensors for structural health monitoring

NASA Astrophysics Data System (ADS)

Lin, Bin; Giurgiutiu, Victor; Yuan, Zheng; Liu, Jian; Chen, Chonglin; Jiang, Jiechao; Bhalla, Amar S.; Guo, Ruyan

2007-04-01

Piezoelectric wafer active sensors (PWAS) have been proven a valuable tool in structural health monitoring. Piezoelectric wafer active sensors are able to send and receive guided Lamb/Rayleigh waves that scan the structure and detect the presence of incipient cracks and structural damage. In-situ thin-film active sensor deposition can eliminate the bonding layer to improve the durability issue and reduce the acoustic impedance mismatch. Ferroelectric thin films have been shown to have piezoelectric properties that are close to those of single-crystal ferroelectrics but the fabrication of ferroelectric thin films on structural materials (steel, aluminum, titanium, etc.) has not been yet attempted. In this work, in-situ fabrication method of piezoelectric thin-film active sensors arrays was developed using the nano technology approach. Specification for the piezoelectric thin-film active sensors arrays was based on electro-mechanical-acoustical model. Ferroelectric BaTiO3 (BTO) thin films were successfully deposited on Ni tapes by pulsed laser deposition under the optimal synthesis conditions. Microstructural studies by X-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO thin films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no inter-diffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. The research objective is to develop the fabrication and optimum design of thin-film active sensor arrays for structural health monitoring applications. The short wavelengths of the micro phased arrays will permit the phased-array imaging of smaller parts and smaller damage than is currently not possible with existing technology.

Ferroelastic switching in a layered-perovskite thin film

PubMed Central

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu-Feng; Van Tendeloo, Gustaaf; Chen, Long-Qing; Nan, Ce-Wen; Ramesh, Ramamoorthy; Zhang, Jinxing

2016-01-01

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications. PMID:26838483

Ferroelastic switching in a layered-perovskite thin film

DOE PAGES

Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; ...

2016-02-03

Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi 2WO 6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barriermore » of ferroelastic switching in orthorhombic Bi 2WO 6 film is ten times lower than the one in PbTiO 3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

Effect of solution concentration on MEH-PPV thin films

NASA Astrophysics Data System (ADS)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

Disconnecting structure and dynamics in glassy thin films

PubMed Central

Sussman, Daniel M.; Cubuk, Ekin D.; Liu, Andrea J.

2017-01-01

Nanometrically thin glassy films depart strikingly from the behavior of their bulk counterparts. We investigate whether the dynamical differences between a bulk and thin film polymeric glass former can be understood by differences in local microscopic structure. Machine learning methods have shown that local structure can serve as the foundation for successful, predictive models of particle rearrangement dynamics in bulk systems. By contrast, in thin glassy films, we find that particles at the center of the film and those near the surface are structurally indistinguishable despite exhibiting very different dynamics. Next, we show that structure-independent processes, already present in bulk systems and demonstrably different from simple facilitated dynamics, are crucial for understanding glassy dynamics in thin films. Our analysis suggests a picture of glassy dynamics in which two dynamical processes coexist, with relative strengths that depend on the distance from an interface. One of these processes depends on local structure and is unchanged throughout most of the film, while the other is purely Arrhenius, does not depend on local structure, and is strongly enhanced near the free surface of a film. PMID:28928147

Microstructural and mechanical characteristics of Ni–Cr thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petley, Vijay; Sathishkumar, S.; Thulasi Raman, K.H.

2015-06-15

Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texturemore » in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.« less

Pathways toward unidirectional alignment in block copolymer thin films on faceted surfaces

NASA Astrophysics Data System (ADS)

Gunkel, Ilja; Gu, Xiaodan; Sarje, Abhinav; Hexemer, Alexander; Russell, Thomas

2015-03-01

Solvent vapor annealing (SVA) has been shown recently to be an effective means to produce long-range lateral order in block copolymer (BCP) thin films in relatively short times. Furthermore, using substrates with faceted surfaces allows for generating unidirectionally aligned BCP microdomains on the size scale of an entire wafer. While in recent years SVA has been largely demystified, the detailed pathways toward obtaining unidirectional alignment still remain unclear. Grazing-incidence X-ray scattering (GISAXS) is a very powerful tool for characterizing the structure and morphology of BCPs in thin films, and is particularly useful for studying structural changes in BCP thin films during SVA. We here present in situ GISAXS experiments on cylinder-forming PS-b-P2VP BCP thin films on faceted Sapphire substrates during annealing in THF. We show that the degree of alignment of cylindrical microdomains is greatly enhanced at solvent concentrations close to the order-disorder transition of the copolymer. Furthermore, we observed that inducing disorder by further increasing the solvent concentration and subsequent quenching to the ordered (not yet glassy) state induced the highest degree of alignment with nearly unidirectional alignment of the microdomains in less than 30 min.

Characterization methodology for lead zirconate titanate thin films with interdigitated electrode structures

NASA Astrophysics Data System (ADS)

Nigon, R.; Raeder, T. M.; Muralt, P.

2017-05-01

The accurate evaluation of ferroelectric thin films operated with interdigitated electrodes is quite a complex task. In this article, we show how to correct the electric field and the capacitance in order to obtain identical polarization and CV loops for all geometrical variants. The simplest model is compared with corrections derived from Schwartz-Christoffel transformations, and with finite element simulations. The correction procedure is experimentally verified, giving almost identical curves for a variety of gaps and electrode widths. It is shown that the measured polarization change corresponds to the average polarization change in the center plane between the electrode fingers, thus at the position where the electric field is most homogeneous with respect to the direction and size. The question of maximal achievable polarization in the various possible textures, and compositional types of polycrystalline lead zirconate titanate thin films is revisited. In the best case, a soft (110) textured thin film with the morphotropic phase boundary composition should yield a value of 0.95Ps, and in the worst case, a rhombohedral (100) textured thin film should deliver a polarization of 0.74Ps.