Quantum dynamics simulations in an ultraslow bath using hierarchy of stochastic Schrödinger equations

NASA Astrophysics Data System (ADS)

Ke, Yaling; Zhao, Yi

2018-04-01

The hierarchy of stochastic Schrödinger equation, previously developed under the unpolarised initial bath states, is extended in this paper for open quantum dynamics under polarised initial bath conditions. The method is proved to be a powerful tool in investigating quantum dynamics exposed to an ultraslow Ohmic bath, as in this case the hierarchical truncation level and the random sampling number can be kept at a relatively small extent. By systematically increasing the system-bath coupling strength, the symmetric Ohmic spin-boson dynamics is investigated at finite temperature, with a very small cut-off frequency. It is confirmed that the slow bath makes the system dynamics extremely sensitive to the initial bath conditions. The localisation tendency is stronger in the polarised initial bath conditions. Besides, the oscillatory coherent dynamics persists even when the system-bath coupling is very strong, in correspondence with what is found recently in the deep sub-Ohmic bath, where also the low-frequency modes dominate.

A Ku band 5 bit MEMS phase shifter for active electronically steerable phased array applications

NASA Astrophysics Data System (ADS)

Sharma, Anesh K.; Gautam, Ashu K.; Farinelli, Paola; Dutta, Asudeb; Singh, S. G.

2015-03-01

The design, fabrication and measurement of a 5 bit Ku band MEMS phase shifter in different configurations, i.e. a coplanar waveguide and microstrip, are presented in this work. The development architecture is based on the hybrid approach of switched and loaded line topologies. All the switches are monolithically manufactured on a 200 µm high resistivity silicon substrate using 4 inch diameter wafers. The first three bits (180°, 90° and 45°) are realized using switched microstrip lines and series ohmic MEMS switches whereas the fourth and fifth bits (22.5° and 11.25°) consist of microstrip line sections loaded by shunt ohmic MEMS devices. Individual bits are fabricated and evaluated for performance and the monolithic device is a 5 bit Ku band (16-18 GHz) phase shifter with very low average insertion loss of the order of 3.3 dB and a return loss better than 15 dB over the 32 states with a chip area of 44 mm2. A total phase shift of 348.75° with phase accuracy within 3° is achieved over all of the states. The performance of individual bits has been optimized in order to achieve an integrated performance so that they can be implemented into active electronically steerable antennas for phased array applications.

Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

NASA Astrophysics Data System (ADS)

Gaddy, Benjamin E.; Kingon, Angus I.; Irving, Douglas L.

2013-05-01

Ohmic RF-MEMS switches hold much promise for low power wireless communication, but long-term degradation currently plagues their reliable use. Failure in these devices occurs at the contact and is complicated by the fact that the same asperities that bear the mechanical load are also important to the flow of electrical current needed for signal processing. Materials selection holds the key to overcoming the barriers that prevent widespread use. Current efforts in materials selection have been based on the material's (or alloy's) ability to resist oxidation as well as its room-temperature properties, such as hardness and electrical conductivity. No ideal solution has yet been found via this route. This may be due, in part, to the fact that the in-use changes to the local environment of the asperity are not included in the selection criteria. For example, Joule heating would be expected to raise the local temperature of the asperity and impose a non-equilibrium thermal gradient in the same region expected to respond to mechanical actuation. We propose that these conditions should be considered in the selection process, as they would be expected to alter mechanical, electrical, and chemical mechanisms in the vicinity of the surface. To this end, we simulate the actuation of an Ohmic radio frequency micro electro mechanical systems switch by using a multi-scale method to model a current-carrying asperity in contact with a polycrystalline substrate. Our method couples continuum solutions of electrical and thermal transport equations to an underlying molecular dynamics simulation. We present simulations of gold-nickel asperities and substrates in order to evaluate the influence of alloying and local order on the early stages of contact actuation. The room temperature response of these materials is compared to the response of the material when a voltage is applied. Au-Ni interactions are accounted for through modification of the existing Zhou embedded atom method potential. The modified potential more accurately captures trends in high-temperature properties, including the enthalpy of mixing and melting temperatures. We simulate the loading of a contacting asperity to several substrates with varying Ni alloying concentrations and compare solid solution strengthening to a phase-separated system. Our simulations show that Ni concentration and configuration have an important effect on contact area, constriction resistance, thermal profiles, and material transfer. These differences suggest that a substrate with 15 at. % Ni featuring phase segregation has fewer early markers that experimentally have indicated long-term failure.

Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

NASA Astrophysics Data System (ADS)

Singh, Bharti; Mehta, B. R.; Govind, Feng, X.; Müllen, Klaus

2011-11-01

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect.

Effects of sol aging on resistive switching behaviors of HfOx resistive memories

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting

2017-03-01

This work investigates effects of long-term sol-aging time on sol-gel HfOx resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfOx surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfOx film can be avoided. Under this circumstance, effects of sol aging time on the HfOx films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfOx RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfOx layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfOx film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfOx resistive switching characteristic induced by sol aging.

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

NASA Astrophysics Data System (ADS)

Thakre, Atul; Kumar, Ashok

2017-12-01

An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (˜ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ˜103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Zhoufei; Ouyang, Xiaolong; Gong, Zhihao

An extended hierarchy equation of motion (HEOM) is proposed and applied to study the dynamics of the spin-boson model. In this approach, a complete set of orthonormal functions are used to expand an arbitrary bath correlation function. As a result, a complete dynamic basis set is constructed by including the system reduced density matrix and auxiliary fields composed of these expansion functions, where the extended HEOM is derived for the time derivative of each element. The reliability of the extended HEOM is demonstrated by comparison with the stochastic Hamiltonian approach under room-temperature classical ohmic and sub-ohmic noises and the multilayermore » multiconfiguration time-dependent Hartree theory under zero-temperature quantum ohmic noise. Upon increasing the order in the hierarchical expansion, the result obtained from the extended HOEM systematically converges to the numerically exact answer.« less

Control quantum evolution speed of a single dephasing qubit for arbitrary initial states via periodic dynamical decoupling pulses.

PubMed

Song, Ya-Ju; Tan, Qing-Shou; Kuang, Le-Man

2017-03-08

We investigate the possibility to control quantum evolution speed of a single dephasing qubit for arbitrary initial states by the use of periodic dynamical decoupling (PDD) pulses. It is indicated that the quantum speed limit time (QSLT) is determined by initial and final quantum coherence of the qubit, as well as the non-Markovianity of the system under consideration during the evolution when the qubit is subjected to a zero-temperature Ohmic-like dephasing reservoir. It is shown that final quantum coherence of the qubit and the non-Markovianity of the system can be modulated by PDD pulses. Our results show that for arbitrary initial states of the dephasing qubit with non-vanishing quantum coherence, PDD pulses can be used to induce potential acceleration of the quantum evolution in the short-time regime, while PDD pulses can lead to potential speedup and slow down in the long-time regime. We demonstrate that the effect of PDD on the QSLT for the Ohmic or sub-Ohmic spectrum (Markovian reservoir) is much different from that for the super-Ohmic spectrum (non-Markovian reservoir).

Equilibrium dynamics of the sub-Ohmic spin-boson model under bias

NASA Astrophysics Data System (ADS)

Zheng, Da-Chuan; Tong, Ning-Hua

2017-06-01

Using the bosonic numerical renormalization group method, we studied the equilibrium dynamical correlation function C(ω) of the spin operator σ z for the biased sub-Ohmic spin-boson model. The small-ω behavior C(ω )\\propto {ω }s is found to be universal and independent of the bias ɛ and the coupling strength α (except at the quantum critical point α ={α }{{c}} and ɛ = 0). Our NRG data also show C(ω )\\propto {χ }2{ω }s for a wide range of parameters, including the biased strong coupling regime (\\varepsilon \

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

NASA Astrophysics Data System (ADS)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Resistive switching properties and physical mechanism of cobalt ferrite thin films

NASA Astrophysics Data System (ADS)

Hu, Wei; Zou, Lilan; Chen, Ruqi; Xie, Wei; Chen, Xinman; Qin, Ni; Li, Shuwei; Yang, Guowei; Bao, Dinghua

2014-04-01

We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform switching voltages, good endurance, and long retention have been demonstrated in the Pt/CoFe2O4/Pt memory cells. On the basis of the analysis of current-voltage characteristic and its temperature dependence, we suggest that the carriers transport through the conducting filaments in low resistance state with Ohmic conduction behavior, and the Schottky emission and Poole-Frenkel emission dominate the conduction mechanism in high resistance state. From resistance-temperature dependence of resistance states, we believe that the physical origin of the resistive switching refers to the formation and rupture of the oxygen vacancies related filaments. The nanostructured CoFe2O4 thin films can find applications in resistive random access memory.

Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

2018-05-01

Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

EFFECTS OF TiOx INTERLAYER ON RESISTANCE SWITCHING OF Pt/TiOx/ZnO/n+-Si STRUCTURES

NASA Astrophysics Data System (ADS)

Li, Hongxia; Lv, Xiaojun; Xi, Junhua; Wu, Xin; Mao, Qinan; Liu, Qingmin; Ji, Zhenguo

2014-08-01

In this paper, we fabricated Pt/TiOx/ZnO/n+-Si structures by inserting TiOx interlayer between Pt top electrode (TE) and ZnO thin film for non-volatile resistive random access memory (ReRAM) applications. Effects of TiOx interlayer with different thickness on the resistance switching of Pt/TiOx/ZnO/n+-Si structures were investigated. Conduction behaviors in high and low resistance state (HRS and LRS) fit well with the trap-controlled space-charge-limited conduction (SCLC) and Ohmic behavior, respectively. Variations of set and reset voltages and HRS and LRS resistances of Pt/TiOx/ZnO/n+-Si structures were investigated as a function of TiOx thickness. Switching cycling tests were attempted to evaluate the endurance reliability of Pt/TiOx/ZnO/n+-Si structures. Additionally, the switching mechanism was analyzed by the filament model.

Spin caloritronic nano-oscillator

DOE PAGES

Safranski, C.; Barsukov, I.; Lee, H. K.; ...

2017-07-18

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Spin caloritronic nano-oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safranski, C.; Barsukov, I.; Lee, H. K.

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

NASA Astrophysics Data System (ADS)

Chen, C.; Yang, Y. C.; Zeng, F.; Pan, F.

2010-08-01

Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 103, long retention time of >106 s and good endurance of >103 were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films.

Deterministic quantum controlled-PHASE gates based on non-Markovian environments

NASA Astrophysics Data System (ADS)

Zhang, Rui; Chen, Tian; Wang, Xiang-Bin

2017-12-01

We study the realization of the quantum controlled-PHASE gate in an atom-cavity system beyond the Markovian approximation. The general description of the dynamics for the atom-cavity system without any approximation is presented. When the spectral density of the reservoir has the Lorentz form, by making use of the memory backflow from the reservoir, we can always construct the deterministic quantum controlled-PHASE gate between a photon and an atom, no matter the atom-cavity coupling strength is weak or strong. While, the phase shift in the output pulse hinders the implementation of quantum controlled-PHASE gates in the sub-Ohmic, Ohmic or super-Ohmic reservoirs.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Skyrmions Driven by Intrinsic Magnons

NASA Astrophysics Data System (ADS)

Psaroudaki, Christina; Loss, Daniel

2018-06-01

We study the dynamics of a Skyrmion in a magnetic insulating nanowire in the presence of time-dependent oscillating magnetic field gradients. These ac fields act as a net driving force on the Skyrmion via its own intrinsic magnetic excitations. In a microscopic quantum field theory approach, we include the unavoidable coupling of the external field to the magnons, which gives rise to time-dependent dissipation for the Skyrmion. We demonstrate that the magnetic ac field induces a super-Ohmic to Ohmic crossover behavior for the Skyrmion dissipation kernels with time-dependent Ohmic terms. The ac driving of the magnon bath at resonance results in a unidirectional helical propagation of the Skyrmion in addition to the otherwise periodic bounded motion.

Analog bus driver and multiplexer

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Hancock, Bruce (Inventor); Cunningham, Thomas J. (Inventor)

2012-01-01

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Transparent resistive switching memory using aluminum oxide on a flexible substrate

NASA Astrophysics Data System (ADS)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung

2013-12-15

Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistancemore » states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.« less

Improved multi-level capability in Si3N4-based resistive switching memory using continuous gradual reset switching

NASA Astrophysics Data System (ADS)

Kim, Sungjun; Park, Byung-Gook

2017-01-01

In this letter, we compare three different types of reset switching behavior in a bipolar resistive random-access memory (RRAM) system that is housed in a Ni/Si3N4/Si structure. The abrupt, step-like gradual and continuous gradual reset transitions are largely determined by the low-resistance state (LRS). For abrupt reset switching, the large conducting path shows ohmic behavior or has a weak nonlinear current-voltage (I-V) characteristics in the LRS. For gradual switching, including both the step-like and continuous reset types, trap-assisted direct tunneling is dominant in the low-voltage regime, while trap-assisted Fowler-Nordheim tunneling is dominant in the high-voltage regime, thus causing nonlinear I-V characteristics. More importantly, we evaluate the multi-level capabilities of the two different gradual switching types, including both step-like and continuous reset behavior, using identical and incremental voltage conditions. Finer control of the conductance level with good uniformity is achieved in continuous gradual reset switching when compared to that in step-like gradual reset switching. For continuous reset switching, a single conducting path, which initially has a tunneling gap, gradually responds to pulses with even and identical amplitudes, while for step-like reset switching, the multiple conducting paths only respond to incremental pulses to obtain effective multi-level states.

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

NASA Astrophysics Data System (ADS)

Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

2018-02-01

Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

Interfacial Metal-Oxide Interactions in Resistive Switching Memories.

PubMed

Cho, Deok-Yong; Luebben, Michael; Wiefels, Stefan; Lee, Kug-Seung; Valov, Ilia

2017-06-07

Metal oxides are commonly used as electrolytes for redox-based resistive switching memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We demonstrate that irrespective of bulk thermodynamics predictions an intermediate oxide film a few nanometers in thickness is always formed at the metal/insulator interface, and this layer significantly contributes to the development of reliable switching characteristics. We have tested metal electrodes and metal oxides mostly used for memristive devices, that is, Ta, Hf, and Ti and Ta 2 O 5 , HfO 2 , and SiO 2 . Intermediate oxide layers are always formed at the interfaces, whereas only the rate of the electrode oxidation depends on the oxygen affinity of the metal and the chemical stability of the oxide matrix. Device failure is associated with complete transition of short-range order to a more disordered main matrix structure.

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chun-Cheng; Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan; Tang, Jian-Fu

2016-06-28

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

PubMed

Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

2008-08-22

In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

Electroforming free controlled bipolar resistive switching in Al/CoFe2O4/FTO device with self-compliance effect

NASA Astrophysics Data System (ADS)

Munjal, Sandeep; Khare, Neeraj

2018-02-01

Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 (CFO) films using an Al (aluminum)/CoFe2O4/FTO (fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and stable resistance states without any application of compliance current, with a resistance ratio of the high resistance state (HRS) and the low resistance state (LRS) of >102. Small switching voltage (<1 volt) and lower current in both the resistance states confirm the fabrication of a low power consumption device. In the LRS, the conduction mechanism was found to be Ohmic in nature, while the high-resistance state (HRS/OFF state) was governed by the space charge-limited conduction mechanism, which indicates the presence of an interfacial layer with an imperfect microstructure near the top Al/CFO interface. The device shows nonvolatile behavior with good endurance properties, an acceptable resistance ratio, uniform resistive switching due to stable, less random filament formation/rupture, and a control over the resistive switching properties by choosing different stop voltages, which makes the device suitable for its application in future nonvolatile resistive random access memory.

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

NASA Astrophysics Data System (ADS)

Abbas, Haider; Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Kang, Tae Su; Yoon, Tae-Sik; Kang, Chi Jung

2018-06-01

Improved resistive switching characteristics are demonstrated in a hybrid device with Pt/Ti/MnO (thin film)/MnO (nanoparticle)/Pt structure. The hybrid devices of MnO thin film and nanoparticle assembly were fabricated. MnO nanoparticles with an average diameter of ∼30 nm were chemically synthesized and assembled as a monolayer on a Pt bottom electrode. A MnO thin film of ∼40 nm thickness was deposited on the nanoparticle assembly to form the hybrid structure. Resistive switching could be induced by the formation and rupture of conducting filaments in the hybrid oxide layers. The hybrid device exhibited very stable unipolar switching with good endurance and retention characteristics. It showed a larger and stable memory window with a uniform distribution of SET and RESET voltages. Moreover, the conduction mechanisms of ohmic conduction, space-charge-limited conduction, Schottky emission, and Poole–Frenkel emission have been investigated as possible conduction mechanisms for the switching of the devices. Using MnO nanoparticles in the thin film and nanoparticle heterostructures enabled the appropriate control of resistive random access memory (RRAM) devices and markedly improved their memory characteristics.

Forming-free bipolar resistive switching in nonstoichiometric ceria films

NASA Astrophysics Data System (ADS)

Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen

2014-01-01

The mechanism of forming-free bipolar resistive switching in a Zr/CeO x /Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO y layer at the Zr/CeO x interface. X-ray diffraction studies of CeO x films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeO x film and in the nonstoichiometric ZrO y interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).

Effect of AlN layer on the bipolar resistive switching behavior in TiN thin film based ReRAM device for non-volatile memory application

NASA Astrophysics Data System (ADS)

Prakash, Ravi; Kaur, Davinder

2018-05-01

The effect of an additional AlN layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (102) corresponding to HRS and LRS, good write/erase endurance (105) and non-volatile long retention (105s) are also observed. Higher thermal conductivity of the AlN layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/AlN/Pt devices for multilevel nonvolatile ReRAM application.

Heating and Large Scale Dynamics of the Solar Corona

NASA Technical Reports Server (NTRS)

Schnack, Dalton D.

2000-01-01

The effort was concentrated in the areas: coronal heating mechanism, unstructured adaptive grid algorithms, numerical modeling of magnetic reconnection in the MRX experiment: effect of toroidal magnetic field and finite pressure, effect of OHMIC heating and vertical magnetic field, effect of dynamic MESH adaption.

Dynamics of a Landau-Zener transitions in a two-level system driven by a dissipative environment

NASA Astrophysics Data System (ADS)

Ateuafack, M. E.; Diffo, J. T.; Fai, L. C.

2016-02-01

The paper investigates the effects of a two-level quantum system coupled to transversal and longitudinal dissipative environment. The time-dependent phase accumulation, LZ transition probability and entropy in the presence of fast-ohmic, sub-ohmic and super-ohmic quantum noise are derived. Analytical results are obtained in terms of temperature, dissipation strength, LZ parameter and bath cutoff frequency. The bath is observed to modify the standard occupation difference by a decaying random phase factor and also produces dephasing during the transfer of population. The dephasing characteristics or the initial non-zero decoherence rate are observed to increase in time with the bath temperature and depend on the system-bath coupling strength and cutoff frequency. These parameters are found to strongly affect the memory and thus tailor the coherence process of the system.

Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances.

PubMed

Hu, Wei; Qin, Ni; Wu, Guangheng; Lin, Yanting; Li, Shuwei; Bao, Dinghua

2012-09-12

The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics of a Pt/NiFe(2)O(4)/Pt structure, such as low operating voltage, high device yield, long retention time (up to 10(5) s), and good endurance (up to 2.2 × 10(4) cycles). The dominant conduction mechanisms are Ohmic conduction in the low-resistance state and in the lower-voltage region of the high-resistance state and Schottky emission in the higher-voltage region of the high-resistance state. On the basis of measurements of the temperature dependence of the resistances and magnetic properties in different resistance states, we explain the physical mechanism of resistive switching of Pt/NiFe(2)O(4)/Pt devices using the model of formation and rupture of conducting filaments by considering the thermal effect of oxygen vacancies and changes in the valences of cations due to the redox effect.

Low-loss plasmon-assisted electro-optic modulator.

PubMed

Haffner, Christian; Chelladurai, Daniel; Fedoryshyn, Yuriy; Josten, Arne; Baeuerle, Benedikt; Heni, Wolfgang; Watanabe, Tatsuhiko; Cui, Tong; Cheng, Bojun; Saha, Soham; Elder, Delwin L; Dalton, Larry R; Boltasseva, Alexandra; Shalaev, Vladimir M; Kinsey, Nathaniel; Leuthold, Juerg

2018-04-01

For nearly two decades, researchers in the field of plasmonics 1 -which studies the coupling of electromagnetic waves to the motion of free electrons near the surface of a metal 2 -have sought to realize subwavelength optical devices for information technology 3-6 , sensing 7,8 , nonlinear optics 9,10 , optical nanotweezers 11 and biomedical applications 12 . However, the electron motion generates heat through ohmic losses. Although this heat is desirable for some applications such as photo-thermal therapy, it is a disadvantage in plasmonic devices for sensing and information technology 13 and has led to a widespread view that plasmonics is too lossy to be practical. Here we demonstrate that the ohmic losses can be bypassed by using 'resonant switching'. In the proposed approach, light is coupled to the lossy surface plasmon polaritons only in the device's off state (in resonance) in which attenuation is desired, to ensure large extinction ratios between the on and off states and allow subpicosecond switching. In the on state (out of resonance), destructive interference prevents the light from coupling to the lossy plasmonic section of a device. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses, operation at over 100 gigahertz, good energy efficiency, low thermal drift and a compact footprint can be combined in a single device. Our result illustrates that plasmonics has the potential to enable fast, compact on-chip sensing and communications technologies.

Composition-ratio influence on resistive switching behavior of solution-processed InGaZnO-based thin-film.

PubMed

Hwang, Yeong-Hyeon; Hwang, Inchan; Cho, Won-Ju

2014-11-01

The influence of composition ratio on the bipolar resistive switching behavior of resistive switching memory devices based on amorphous indium-gallium-zinc-oxide (a-IGZO) using the spin-coating process was investigated. To study the stoichiometric effects of the a-IGZO films on device characteristics, four devices with In/Ga/Zn stoichiometries of 1:1:1, 3:1:1, 1:3:1, and 1:1:3 were fabricated and characterized. The 3:1:1 film showed an ohmic behavior and the 1:1:3 film showed a rectifying switching behavior. The current-voltage characteristics of the a-IGZO films with stoichiometries of 1:1:1 and 1:3:1, however, showed a bipolar resistive memory switching behavior. We found that the three-fold increase in the gallium content ratio reduces the reset voltage from -0.9 to - 0.4 V and enhances the current ratio of high to low resistive states from 0.7 x 10(1) to 3 x 10(1). Our results show that the increase in the Ga composition ratio in the a-IGZO-based ReRAM cells effectively improves the device performance and reliability by increasing the initial defect density in the a-IGZO films.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

NASA Astrophysics Data System (ADS)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Pegasus power system facility upgrades

NASA Astrophysics Data System (ADS)

Lewicki, B. T.; Kujak-Ford, B. A.; Winz, G. R.

2008-11-01

Two key Pegasus systems have been recently upgraded: the Ohmic-transformer IGCT bridge control system, and the plasma-gun injector power system. The Ohmic control system contains two new microprocessor controlled components to provide an interface between the PWM controller and the IGCT bridges. An interface board conditions the command signals from the PWM controller. A splitter/combiner board routes the conditioned PWM commands to an array of IGCT bridges and interprets IGCT bridge status. This system allows for any PWM controller to safely control IGCT bridges. Future developments will include a transition to a polyphasic bridge control. This will allow for 3 to 4 times the present pulse length and provide a much higher switching frequency. The plasma gun injector system now includes active current feedback control on gun bias current via PWM buck type power supplies. Near term goals include a doubling or tripling of the applied bias voltage. Future arc bias system power supplies may include a simpler boost type system which will allow access to even higher voltages using existing low voltage energy storage systems.

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

PubMed

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm(-2) for a large electrode (an area of approximately 60 000 microm(2)). However, the local current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

PubMed Central

Rana, Anwar Manzoor; Akbar, Tahira; Ismail, Muhammad; Ahmad, Ejaz; Hussain, Fayyaz; Talib, Ijaz; Imran, Muhammad; Mehmood, Khalid; Iqbal, Khalid; Nadeem, M. Younus

2017-01-01

Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region. PMID:28079056

Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Yogesh; Pavunny, Shojan P.; Katiyar, Ram S., E-mail: rkatiyar@hpcf.upr.edu

2015-09-07

We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO{sub 3} (a-LHO) thin films for non-volatile resistive random access memory applications. Nonpolar resistive switching (RS) was achieved in Pt/a-LHO/Pt memory cells with all four possible RS modes (i.e., positive unipolar, positive bipolar, negative unipolar, and negative bipolar) having high R{sub ON}/R{sub OFF} ratios (in the range of ∼10{sup 4}–10{sup 5}) and non-overlapping switching voltages (set voltage, V{sub ON} ∼ ±3.6–4.2 V and reset voltage, V{sub OFF} ∼ ±1.3–1.6 V) with a small variation of about ±5–8%. Temperature dependent current-voltage (I–V) characteristics indicated the metallic conduction in low resistance states (LRS). We believe that themore » formation (set) and rupture (reset) of mixed conducting filaments formed out of oxygen vacancies and metallic Ho atoms could be responsible for the change in the resistance states of the memory cell. Detailed analysis of I–V characteristics further corroborated the formation of conductive nanofilaments based on metal-like (Ohmic) conduction in LRS. Simmons-Schottky emission was found to be the dominant charge transport mechanism in the high resistance state.« less

Bistable resistive memory behavior in gelatin-CdTe quantum dot composite film

NASA Astrophysics Data System (ADS)

Vallabhapurapu, Sreedevi; Rohom, Ashwini; Chaure, N. B.; Du, Shengzhi; Srinivasan, Ananthakrishnan

2018-05-01

Bistable memory behavior has been observed for the first time in gelatin type A thin film dispersed with functionalized CdTe quantum dots. The two terminal device with the polymer nanocomposite layer sandwiched between an indium tin oxide coated glass plate and an aluminium top electrode performs as a bistable resistive random access memory module. Butterfly shaped (O-shaped with a hysteresis in forward and reverse sweeps) current-voltage response is observed in this device. The conduction mechanism leading to the bistable electrical switching has been deduced to be a combination of ohmic and electron hopping.

Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

NASA Astrophysics Data System (ADS)

Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

2018-04-01

In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

The influence of current neutralization and multiple Coulomb scattering on the spatial dynamics of resistive sausage instability of a relativistic electron beam propagating in ohmic plasma

NASA Astrophysics Data System (ADS)

Kolesnikov, E. K.; Manuilov, A. S.; Petrov, V. S.; Klyushnikov, G. N.; Chernov, S. V.

2017-06-01

The influence of the current neutralization process, the phase mixing of the trajectories of electrons and multiple Coulomb scattering of electrons beam on the atoms of the background medium on the spatial increment of the growth of sausage instability of a relativistic electron beam propagating in ohmic plasma channel has been considered. It has been shown that the amplification of the current neutralization leads to a significant increase in this instability, and phase mixing and the process of multiple scattering of electrons beam on the atoms of the background medium are the stabilizing factor.

Graphene-based active slow surface plasmon polaritons

PubMed Central

Lu, Hua; Zeng, Chao; Zhang, Qiming; Liu, Xueming; Hossain, Md Muntasir; Reineck, Philipp; Gu, Min

2015-01-01

Finding new ways to control and slow down the group velocity of light in media remains a major challenge in the field of optics. For the design of plasmonic slow light structures, graphene represents an attractive alternative to metals due to its strong field confinement, comparably low ohmic loss and versatile tunability. Here we propose a novel nanostructure consisting of a monolayer graphene on a silicon based graded grating structure. An external gate voltage is applied to graphene and silicon, which are separated by a spacer layer of silica. Theoretical and numerical results demonstrate that the structure exhibits an ultra-high slowdown factor above 450 for the propagation of surface plasmon polaritons (SPPs) excited in graphene, which also enables the spatially resolved trapping of light. Slowdown and trapping occur in the mid-infrared wavelength region within a bandwidth of ~2.1 μm and on a length scale less than 1/6 of the operating wavelength. The slowdown factor can be precisely tuned simply by adjusting the external gate voltage, offering a dynamic pathway for the release of trapped SPPs at room temperature. The presented results will enable the development of highly tunable optoelectronic devices such as plasmonic switches and buffers. PMID:25676462

Effect of ultrahigh-temperature continuous ohmic heating treatment on fresh orange juice.

PubMed

Leizerson, Shirly; Shimoni, Eyal

2005-05-04

The scope of this study is the effect of ohmic heating thermal treatment on liquid fruit juice made of oranges. Effects of ohmic heating on the quality of orange juice were examined and compared to those of heat pasteurization at 90 degrees C for 50 s. Orange juice was treated at temperatures of 90, 120, and 150 degrees C for 1.13, 0.85, and 0.68 s in an ohmic heating system. Microbial counts showed complete inactivation of bacteria, yeast, and mold during ohmic and conventional treatments. The ohmic heating treatment reduced pectin esterase activity by 98%. The reduction in vitamin C was 15%. Ohmic-heated orange juice maintained higher amounts of the five representative flavor compounds than did heat-pasteurized juice. Sensory evaluation tests showed no difference between fresh and ohmic-heated orange juice. Thus, high-temperature ohmic-heating treatment can be effectively used to pasteurize fresh orange juice with minimal sensory deterioration.

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

NASA Technical Reports Server (NTRS)

Jung, Tae-Won; Lindholm, Fredrik A.; Neugroschel, Arnost

1987-01-01

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Quantum correlation of high dimensional system in a dephasing environment

NASA Astrophysics Data System (ADS)

Ji, Yinghua; Ke, Qiang; Hu, Juju

2018-05-01

For a high dimensional spin-S system embedded in a dephasing environment, we theoretically analyze the time evolutions of quantum correlation and entanglement via Frobenius norm and negativity. The quantum correlation dynamics can be considered as a function of the decoherence parameters, including the ratio between the system oscillator frequency ω0 and the reservoir cutoff frequency ωc , and the different environment temperature. It is shown that the quantum correlation can not only measure nonclassical correlation of the considered system, but also perform a better robustness against the dissipation. In addition, the decoherence presents the non-Markovian features and the quantum correlation freeze phenomenon. The former is much weaker than that in the sub-Ohmic or Ohmic thermal reservoir environment.

Influence of argon and oxygen pressure ratio on bipolar-resistive switching characteristics of CeO2- x thin films deposited at room temperature

NASA Astrophysics Data System (ADS)

Ismail, Muhammad; Ullah, Rehmat; Hussain, Riaz; Talib, Ijaz; Rana, Anwar Manzoor; Hussain, Muhammad; Mahmood, Khalid; Hussain, Fayyaz; Ahmed, Ejaz; Bao, Dinghua

2018-02-01

Cerium oxide (CeO2-x) film was deposited on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Resistive switching characteristics of these ceria films have been improved by increasing oxygen content during deposition process. Endurance and statistical analyses indicate that the operating stability of CeO2-x-based memory is highly dependent on the oxygen content. Results indicate that CeO2-x film-based RRAM devices exhibit optimum performance when fabricated at an argon/oxygen ratio of 6:24. An increase in the oxygen content introduced during CeO2-x film deposition not only stabilizes the conventional bipolar RS but also improves excellent switching uniformity such as large ON/OFF ratio (102), excellent switching device-to-device uniformity and good sweep endurance over 500 repeated RS cycles. Conduction in the low-resistance state (LRS) as well as in the low bias field region in the high-resistance state (HRS) is found to be Ohmic and thus supports the conductive filament (CF) theory. In the high voltage region of HRS, space charge limited conduction (SCLC) and Schottky emission are found to be the dominant conduction mechanisms. A feasible filamentary RS mechanism based on the movement of oxygen ions/vacancies under the bias voltage has been discussed.

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process.

PubMed

Blázquez, O; Martín, G; Camps, I; Mariscal, A; López-Vidrier, J; Ramírez, J M; Hernández, S; Estradé, S; Peiró, F; Serna, R; Garrido, B

2018-06-08

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole-Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

Memristive behaviour of Si-Al oxynitride thin films: the role of oxygen and nitrogen vacancies in the electroforming process

NASA Astrophysics Data System (ADS)

Blázquez, O.; Martín, G.; Camps, I.; Mariscal, A.; López-Vidrier, J.; Ramírez, J. M.; Hernández, S.; Estradé, S.; Peiró, F.; Serna, R.; Garrido, B.

2018-06-01

The resistive switching properties of silicon-aluminium oxynitride (SiAlON) based devices have been studied. Electrical transport mechanisms in both resistance states were determined, exhibiting an ohmic behaviour at low resistance and a defect-related Poole‑Frenkel mechanism at high resistance. Nevertheless, some features of the Al top-electrode are generated during the initial electroforming, suggesting some material modifications. An in-depth microscopic study at the nanoscale has been performed after the electroforming process, by acquiring scanning electron microscopy and transmission electron microscopy images. The direct observation of the devices confirmed features on the top electrode with bubble-like appearance, as well as some precipitates within the SiAlON. Chemical analysis by electron energy loss spectroscopy has demonstrated that there is an out-diffusion of oxygen and nitrogen ions from the SiAlON layer towards the electrode, thus forming silicon-rich paths within the dielectric layer and indicating vacancy change to be the main mechanism in the resistive switching.

Non-equilibrium quantum phase transition via entanglement decoherence dynamics.

PubMed

Lin, Yu-Chen; Yang, Pei-Yun; Zhang, Wei-Min

2016-10-07

We investigate the decoherence dynamics of continuous variable entanglement as the system-environment coupling strength varies from the weak-coupling to the strong-coupling regimes. Due to the existence of localized modes in the strong-coupling regime, the system cannot approach equilibrium with its environment, which induces a nonequilibrium quantum phase transition. We analytically solve the entanglement decoherence dynamics for an arbitrary spectral density. The nonequilibrium quantum phase transition is demonstrated as the system-environment coupling strength varies for all the Ohmic-type spectral densities. The 3-D entanglement quantum phase diagram is obtained.

H-mode and Edge Physics on the Pegasus ST: Progress and Future Directions

NASA Astrophysics Data System (ADS)

Bongard, M. W.; Bodner, G. M.; Barr, J. L.; Burke, M. G.; Fonck, R. J.; Hinson, E. T.; Kriete, D. M.; Lewicki, B. T.; Perry, J. M.; Reusch, J. A.; Schlossberg, D. J.; Thome, K. E.; Winz, G. R.

2015-11-01

Ohmic H-modes are routinely attained on the Pegasus ST, in part due to the low L-H power threshold PLH arising from low-BT operation at A ~ 1 . Characteristics of H-mode include: improved τe, consistent with H98 ~ 1 edge current and pressure pedestal formation; and the occurrence of ELMs. Experiments in the past year have examined magnetic topology and density dependencies of PLH in detail. PLH exceeds ITER L-H scaling values by 10-20 ×, with PLH /PITPA 08 increasing sharply as A --> 1 . No PLH-minimizing density has been found. Unlike at high- A, PLH is insensitive to limited or diverted magnetic topologies to date. The low BT and modest pedestal values at A ~ 1 afford unique edge diagnostic accessibility to investigate ELMs and their nonlinear dynamics. Jedge (R , t) measured through a Type I ELM shows a complex pedestal collapse and filament ejection. These studies are being extended to higher Ip and longer pulse length with LHI startup to conserve Ohmic V-s and improve MHD stability. A modest-cost upgrade to the facility will enable detailed validation studies of nonlinear ELM dynamics and ELM control. This initiative will upgrade the centerstack, increasing BT by × 3 , Ohmic V-s by × 4 , and pulse lengths to 100 ms at A < 1 . 3 , as well as deploy a comprehensive 3D magnetic perturbation coil system with full poloidal coverage from frame coils and helical centerstack windings. Work supported by US DOE grant DE-FG02-96ER54375.

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

PubMed

Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

2017-02-22

Al 2 O 3 - or HfO 2 -based nanocomposite structures with embedded CoPt x nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt x NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt x NCs, ALD-derived Pt/oxide/100 cycle-CoPt x NCs/TiN/SiO 2 /Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10 2 ) of OFF/ON states, better switching endurance up to 10 4 cycles, and longer data retention over 10 5 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPt x NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPt x NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPt x NCs can effectively improve the formation of conducting filaments due to the CoPt x NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

2017-06-01

Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

Constraining Data Mining with Physical Models: Voltage- and Oxygen Pressure-Dependent Transport in Multiferroic Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strelcov, Evgheni; Belianinov, Alexei; Hsieh, Ying-Hui

Development of new generation electronic devices requires understanding and controlling the electronic transport in ferroic, magnetic, and optical materials, which is hampered by two factors. First, the complications of working at the nanoscale, where interfaces, grain boundaries, defects, and so forth, dictate the macroscopic characteristics. Second, the convolution of the response signals stemming from the fact that several physical processes may be activated simultaneously. Here, we present a method of solving these challenges via a combination of atomic force microscopy and data mining analysis techniques. Rational selection of the latter allows application of physical constraints and enables direct interpretation ofmore » the statistically significant behaviors in the framework of the chosen physical model, thus distilling physical meaning out of raw data. We demonstrate our approach with an example of deconvolution of complex transport behavior in a bismuth ferrite–cobalt ferrite nanocomposite in ambient and ultrahigh vacuum environments. Measured signal is apportioned into four electronic transport patterns, showing different dependence on partial oxygen and water vapor pressure. These patterns are described in terms of Ohmic conductance and Schottky emission models in the light of surface electrochemistry. Finally and furthermore, deep data analysis allows extraction of local dopant concentrations and barrier heights empowering our understanding of the underlying dynamic mechanisms of resistive switching.« less

A mobile test facility based on a magnetic cumulative generator to study the stability of the power plants under impact of lightning currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shurupov, A. V.; Zavalova, V. E., E-mail: zavalova@fites.ru; Kozlov, A. V.

The report presents the results of the development and field testing of a mobile test facility based on a helical magnetic cumulative generator (MCGTF). The system is designed for full-scale modeling of lightning currents to study the safety of power plants of any type, including nuclear power plants. Advanced technologies of high-energy physics for solving both engineering and applied problems underlie this pilot project. The energy from the magnetic cumulative generator (MCG) is transferred to a high-impedance load with high efficiency of more than 50% using pulse transformer coupling. Modeling of the dynamics of the MEG that operates in amore » circuit with lumped parameters allows one to apply the law of inductance output during operation of the MCG, thus providing the required front of the current pulse in the load without using any switches. The results of field testing of the MCGTF are presented for both the ground loop and the model load. The ground loop generates a load resistance of 2–4 Ω. In the tests, the ohmic resistance of the model load is 10 Ω. It is shown that the current pulse parameters recorded in the resistive-inductive load are close to the calculated values.« less

Constraining Data Mining with Physical Models: Voltage- and Oxygen Pressure-Dependent Transport in Multiferroic Nanostructures

DOE PAGES

Strelcov, Evgheni; Belianinov, Alexei; Hsieh, Ying-Hui; ...

2015-08-27

Development of new generation electronic devices requires understanding and controlling the electronic transport in ferroic, magnetic, and optical materials, which is hampered by two factors. First, the complications of working at the nanoscale, where interfaces, grain boundaries, defects, and so forth, dictate the macroscopic characteristics. Second, the convolution of the response signals stemming from the fact that several physical processes may be activated simultaneously. Here, we present a method of solving these challenges via a combination of atomic force microscopy and data mining analysis techniques. Rational selection of the latter allows application of physical constraints and enables direct interpretation ofmore » the statistically significant behaviors in the framework of the chosen physical model, thus distilling physical meaning out of raw data. We demonstrate our approach with an example of deconvolution of complex transport behavior in a bismuth ferrite–cobalt ferrite nanocomposite in ambient and ultrahigh vacuum environments. Measured signal is apportioned into four electronic transport patterns, showing different dependence on partial oxygen and water vapor pressure. These patterns are described in terms of Ohmic conductance and Schottky emission models in the light of surface electrochemistry. Finally and furthermore, deep data analysis allows extraction of local dopant concentrations and barrier heights empowering our understanding of the underlying dynamic mechanisms of resistive switching.« less

Design and dSpace interfacing of current fed high gain dc to dc boost converter for low voltage applications

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Debraj; Das, Subhrajit; Arunkumar, G.; Elangovan, D.; Ragunath, G.

2017-11-01

In this paper a current fed interleaved DC - DC boost converter which has an isolated topology and used for high voltage step up is proposed. A basic DC to DC boost converter converts uncontrolled DC voltage into controlled DC voltage of higher magnitude. Whereas this topology has the advantages of lower input current ripple, lesser output voltage, lesser stress on switches, faster transient response, improved reliability and much lesser electromagnetic emission over the conventional DC to DC boost converter. Most important benefit of this interleaved DC to DC boost converter is much higher efficiency. The input current is divided into two paths, substantially ohmic loss (I2R) and inductor ac loss gets reduced and finally the system achieves much higher efficiency. With recent mandates on energy saving interleaved DC to DC boost converter may be used as a very powerful tool to maintain good power density keeping the input current manageable. Higher efficiency also allows higher switching frequency and as a result the topology becomes more compact and cost friendly. The proposed topology boosts 48v DC to 200 V DC. Switching frequency is 100 kHz and PSIM 9.1 Platform has been used for the simulation.

Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

PubMed Central

Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

2016-01-01

Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device. PMID:27811977

Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide:polyvinylpyrrolidone nanocomposites

NASA Astrophysics Data System (ADS)

Kim, Woo Kyum; Wu, Chaoxing; Kim, Tae Whan

2018-06-01

The electrical characteristics of flexible memristive devices utilizing a graphene oxide (GO):polyvinylpyrrolidone (PVP) nanocomposite charge-trapping layer with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-modified layer fabricated on an indium-tin-oxide (ITO)-coated polyethylene glycol naphthalate (PEN) substrate were investigated. Current-voltage (I-V) curves for the Al/GO:PVP/PEDOT:PSS/ITO/PEN devices showed remarkable hysteresis behaviors before and after bending. The maximum memory margins of the devices before and after 100 bending cycles were approximately 7.69 × 103 and 5.16 × 102, respectively. The devices showed nonvolatile memory effect with a retention time of more than 1 × 104 s. The "Reset" voltages were distributed between 2.3 and 3.5 V, and the "Set" voltages were dispersed between -0.7 and -0.2 V, indicative of excellent, uniform electrical performance. The endurance number of ON/OFF-switching and bending cycles for the devices was 1 × 102, respectively. The bipolar resistive switching behavior was explained on the basis of I-V results. In particular, the bipolar resistive switching behaviors of the LRS and the HRS for the devices are dominated by the Ohmic and space charge current mechanisms, respectively.

Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

NASA Astrophysics Data System (ADS)

Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

2018-06-01

Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

Magnetics and Power System Upgrades for the Pegasus-U Experiment

NASA Astrophysics Data System (ADS)

Preston, R. C.; Bongard, M. W.; Fonck, R. J.; Lewicki, B. T.

2014-10-01

To support the missions of developing local helicity injection startup and exploiting advanced tokamak physics studies at near unity aspect ratio, the proposed Pegasus-U will include expanded magnetic systems and associated power supplies. A new centerstack increases the toroidal field seven times to 1 T and the volt-seconds by a factor of six while maintaining operation at an aspect ratio of 1.2. The poloidal field magnet system is expanded to support improved shape control and robust double or single null divertor operation at the full plasma current of 0.3 MA. An integrated digital control system based on Field Programmable Gate Arrays (FPGAs) provides active feedback control of all magnet currents. Implementation of the FPGAs is achieved with modular noise reducing electronics. The digital feedback controllers replace the existing analog systems and switch multiplexing technology. This will reduce noise sensitivity and allow the operational Ohmic power supply voltage to increase from 2100 V to its maximum capacity of 2400 V. The feedback controller replacement also allows frequency control for ``freewheeling''--stopping the switching for a short interval and allowing the current to coast. The FPGAs assist in optimizing pulse length by having programmable switching events to minimize energy losses. They also allow for more efficient switching topologies that provide improved stored energy utilization, and support increasing the pulse length from 25 ms to 50-100 ms. Work supported by US DOE Grant DE-FG02-96ER54375.

A Multicontrolled Enamine Configurational Switch Undergoing Dynamic Constitutional Exchange.

PubMed

Ren, Yansong; Svensson, Per H; Ramström, Olof

2018-05-22

A multiresponsive enamine-based molecular switch is presented, in which forward/backward configurational rotation around the C=C bond could be precisely controlled by the addition of an acid/base or metal ions. Fluorescence turn-on/off effects and large Stokes shifts were observed while regulating the switching process with Cu II . The enamine functionality furthermore enabled double dynamic regimes, in which configurational switching could operate in conjunction with constitutional enamine exchange of the rotor part. This behavior was used to construct a prototypical dynamic covalent switch system through enamine exchange with primary amines. The dynamic exchange process could be readily turned on/off by regulating the switch status with pH. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Temperature Characteristics of Pt/TaSi2/Pt/W and Pt/Ti/W Diffusion Barrier Systems for Ohmic Contacts to 4H-SiC

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy

2017-01-01

The degradation of ohmic contacts to 4H-SiC pressure sensors over time at high temperature is primarily due to two failure mechanisms: migrating bond pad Au and atmospheric O toward the ohmic contact SiC interface and the inter-metallic mixing between diffusion barrier systems (DBS) and the underlying ohmic contact metallization. We investigated the effectiveness of Pt/TaSi2/Pt/W (DBS-A) and Pt/Ti/W (DBS-B) in preventing Au and O diffusion through the underlying binary Ti/W or alloyed W50:Ni50 ohmic contacts to 4H-SiC and the DBS ohmic contact intermixing at temperature up to 700 C.

Non-equilibrium quantum phase transition via entanglement decoherence dynamics

PubMed Central

Lin, Yu-Chen; Yang, Pei-Yun; Zhang, Wei-Min

2016-01-01

We investigate the decoherence dynamics of continuous variable entanglement as the system-environment coupling strength varies from the weak-coupling to the strong-coupling regimes. Due to the existence of localized modes in the strong-coupling regime, the system cannot approach equilibrium with its environment, which induces a nonequilibrium quantum phase transition. We analytically solve the entanglement decoherence dynamics for an arbitrary spectral density. The nonequilibrium quantum phase transition is demonstrated as the system-environment coupling strength varies for all the Ohmic-type spectral densities. The 3-D entanglement quantum phase diagram is obtained. PMID:27713556

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

Light-induced new memory states in electronic resistive switching of NiO/NSTO junction

NASA Astrophysics Data System (ADS)

Wei, Ling; Li, G. Q.; Zhang, W. F.

2016-02-01

n-type and p-type NiO films were prepared on SrTiO3:Nb (NSTO) by controlling oxygen pressures during the process of pulsed laser deposition. The results of current-voltage (I-V) characteristics and photocurrent investigation indicate that the junction shows a typical electronic bipolar resistive switching (RS) behavior and the optical injection can add new resistance states. Photocurrents can obviously be modulated by different resistance states of NiO/NSTO junction. The linear fitting results of I-V curves reveal that the low resistance state follows Ohmic behavior and the high resistance state follows Schottky-emission mechanism. The depletion widths under forward and reverse bias in the dark and with the illumination were estimated respectively. Combined with the energy band structure, the mechanism of RS and photoresponse in the NiO/NSTO junction can be attributed to the variance of interfacial barrier during electrical and optical injection. These results pave the way for the application of the NiO/NSTO junction in the multilevel storage of optical-electrical devices.

Resistive switching characteristics of solution-processed Al-Zn-Sn-O films annealed by microwave irradiation

NASA Astrophysics Data System (ADS)

Kim, Tae-Wan; Baek, Il-Jin; Cho, Won-Ju

2018-02-01

In this study, we employed microwave irradiation (MWI) at low temperature in the fabrication of solution-processed AlZnSnO (AZTO) resistive random access memory (ReRAM) devices with a structure of Ti/AZTO/Pt and compared the memory characteristics with the conventional thermal annealing (CTA) process. Typical bipolar resistance switching (BRS) behavior was observed in AZTO ReRAM devices treated with as-deposited (as-dep), CTA and MWI. In the low resistance state, the Ohmic conduction mechanism describes the dominant conduction of these devices. On the other hand, the trap-controlled space charge limited conduction (SCLC) mechanism predominates in the high resistance state. The AZTO ReRAM devices processed with MWI showed larger memory windows, uniform distribution of resistance state and operating voltage, stable DC durability (>103 cycles) and stable retention characteristics (>104 s). In addition, the AZTO ReRAM devices treated with MWI exhibited multistage storage characteristics by modulating the amplitude of the reset bias, and eight distinct resistance levels were obtained with stable retention capability.

Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices

NASA Astrophysics Data System (ADS)

Yang, Mei; Wang, Hong; Ma, Xiaohua; Gao, Haixia; Wang, Bin

2017-12-01

Nitrides could create opportunities of tuning resistive-switching (RS) characteristics due to their different electrical properties and ionic chemistry with oxides. Here, we reported on the effect of nitrogen-accommodation ability of electrodes in SiNx-based RS devices. The Ti/SiNx/Pt devices show a self-compliance bipolar RS with excellent reliability. The W/SiNx/Pt devices provide an unstable RS and fall to an intermediate resistance state (IRS) after a set process. The low resistance states of the Ti/SiNx/Pt devices obey Ohmic conduction and Frenkel-Poole emission from a conductive channel. The IRS of the W/SiNx/Pt devices conforms to Schottky emission and Fowler-Nordheim tunneling from a conductive channel/insulator/electrode structure. A nitrogen-ion-based model is proposed to explain the experimental results. According to the model, the nitrogen-accommodation ability of the electrodes dominates the nitrogen-reservoir size and the nitrogen-ion migration at the metal/SiNx interface, modulating the RS characteristics of the SiNx memory devices.

An explicit scheme for ohmic dissipation with smoothed particle magnetohydrodynamics

NASA Astrophysics Data System (ADS)

Tsukamoto, Yusuke; Iwasaki, Kazunari; Inutsuka, Shu-ichiro

2013-09-01

In this paper, we present an explicit scheme for Ohmic dissipation with smoothed particle magnetohydrodynamics (SPMHD). We propose an SPH discretization of Ohmic dissipation and solve Ohmic dissipation part of induction equation with the super-time-stepping method (STS) which allows us to take a longer time step than Courant-Friedrich-Levy stability condition. Our scheme is second-order accurate in space and first-order accurate in time. Our numerical experiments show that optimal choice of the parameters of STS for Ohmic dissipation of SPMHD is νsts ˜ 0.01 and Nsts ˜ 5.

Memristive switching induced by 100 MeV Ag7+ ion irradiation in Ag/La0.7Sr0.3MnO3/Ag planar structures

NASA Astrophysics Data System (ADS)

Bhavsar, K. H.; Joshi, U. S.; Mistry, B. V.; Khan, S. A.; Avasthi, D. K.

2011-09-01

Resistive random access memory is one of the candidate technologies for the promising next generation non-volatile memories with fast switching speed, low power consumption and non-destructive readout. The swift heavy ion (SHI)-induced resistive switching behavior of Ag/La0.7Sr0.3MnO3/Ag planar structures, grown on SiO2 substrates by the chemical solution deposition technique, has been investigated. Five identical samples were irradiated by 100 MeV Ag7+ ions with fluence values ranging from 1×1011 to 5×1013 ions/cm2 at the Materials Science beamline of the IUAC, New Delhi. Upon irradiation, systematic amorphization and grain elongation was observed in the grazing incidence X-ray diffraction and atomic force microscopy, respectively. Four-terminal I-V curves indicate typical non-ohmic behavior of pristine Ag/La0.7Sr0.3MnO3/Ag planar geometry at room temperature for several voltage-sweeping cycles. On the other hand, well-defined hysteresis loops with sharp on-off transition in the I-V curves were observed for the sample irradiated with 100 MeV Ag7+ ions at 1×1012 ions/cm2, indicating that the sample possesses low resistance state and high resistance state. A symmetrical resistance ratio (R high/R low) of ∼ 330% at-1.7 V has been achieved. The resistance switching is bipolar and may be attributed to SHI-induced defects in the device. Such defect-induced resistive switching has recently been proposed theoretically, and our results are direct evidence of the phenomenon.

Dynamics in hybrid complex systems of switches and oscillators

NASA Astrophysics Data System (ADS)

Taylor, Dane; Fertig, Elana J.; Restrepo, Juan G.

2013-09-01

While considerable progress has been made in the analysis of large systems containing a single type of coupled dynamical component (e.g., coupled oscillators or coupled switches), systems containing diverse components (e.g., both oscillators and switches) have received much less attention. We analyze large, hybrid systems of interconnected Kuramoto oscillators and Hopfield switches with positive feedback. In this system, oscillator synchronization promotes switches to turn on. In turn, when switches turn on, they enhance the synchrony of the oscillators to which they are coupled. Depending on the choice of parameters, we find theoretically coexisting stable solutions with either (i) incoherent oscillators and all switches permanently off, (ii) synchronized oscillators and all switches permanently on, or (iii) synchronized oscillators and switches that periodically alternate between the on and off states. Numerical experiments confirm these predictions. We discuss how transitions between these steady state solutions can be onset deterministically through dynamic bifurcations or spontaneously due to finite-size fluctuations.

Dynamically reconfigurable optical packet switch (DROPS)

NASA Astrophysics Data System (ADS)

Huang, Chi-Heng; Chou, Hsu-Feng; Bowers, John E.; Toudeh-Fallah, Farzam; Gyurek, Russ

2006-12-01

A novel Dynamically Reconfigurable Optical Packet Switch (DROPS) that combines both spectral and spatial switching capabilities is proposed and experimentally demonstrated for the first time. Compared with an Arrayed Waveguide Grating Router (AWGR), the added spatial switching capability provided by the microelectromechanical systems (MEMS) enables dynamically reconfigurable routing that is not possible with an AWGR alone. This methodology has several advantages over an AWGR including scalability, additional degrees of freedom in routing a packet from an ingress port to an egress port and more flexibility in path or line card recovery. The experimental demonstration implemented with 10-Gb/s packets shows that the added spatial switching does not degrade the bit-error-rate performance, indicating the promising potential of DROPS as a versatile and ultra-high capacity switch for optical packet-switched networks.

On the transient dynamics of piezoelectric-based, state-switched systems

NASA Astrophysics Data System (ADS)

Lopp, Garrett K.; Kelley, Christopher R.; Kauffman, Jeffrey L.

2018-01-01

This letter reports on the induced mechanical transients for piezoelectric-based, state-switching approaches utilizing both experimental tests and a numerical model that more accurately captures the dynamics associated with a switch between stiffness states. Currently, switching models instantaneously dissipate the stored piezoelectric voltage, resulting in a discrete change in effective stiffness states and a discontinuity in the system dynamics during the switching event. The proposed model allows for a rapid but continuous voltage dissipation and the corresponding variation between stiffness states, as one sees in physical implementations. This rapid variation in system stiffness when switching at a point of non-zero strain leads to high-frequency, large-amplitude transients in the system acceleration response. Utilizing a fundamental piezoelectric bimorph, a comparison between the numerical and experimental results reveals that these mechanical transients are much stronger than originally anticipated and masked by measurement hardware limitations, thus highlighting the significance of an appropriate system model governing the switch dynamics. Such a model enables designers to analyze systems that incorporate piezoelectric-based state switching with greater accuracy to ensure that these transients do not degrade the intended performance. Finally, if the switching does create unacceptable transients, controlling the duration of voltage dissipation enables control over the frequency content and peak amplitudes associated with the switch-induced acceleration transients.

Clustering promotes switching dynamics in networks of noisy neurons

NASA Astrophysics Data System (ADS)

Franović, Igor; Klinshov, Vladimir

2018-02-01

Macroscopic variability is an emergent property of neural networks, typically manifested in spontaneous switching between the episodes of elevated neuronal activity and the quiescent episodes. We investigate the conditions that facilitate switching dynamics, focusing on the interplay between the different sources of noise and heterogeneity of the network topology. We consider clustered networks of rate-based neurons subjected to external and intrinsic noise and derive an effective model where the network dynamics is described by a set of coupled second-order stochastic mean-field systems representing each of the clusters. The model provides an insight into the different contributions to effective macroscopic noise and qualitatively indicates the parameter domains where switching dynamics may occur. By analyzing the mean-field model in the thermodynamic limit, we demonstrate that clustering promotes multistability, which gives rise to switching dynamics in a considerably wider parameter region compared to the case of a non-clustered network with sparse random connection topology.

High accuracy switched-current circuits using an improved dynamic mirror

NASA Technical Reports Server (NTRS)

Zweigle, G.; Fiez, T.

1991-01-01

The switched-current technique, a recently developed circuit approach to analog signal processing, has emerged as an alternative/compliment to the well established switched-capacitor circuit technique. High speed switched-current circuits offer potential cost and power savings over slower switched-capacitor circuits. Accuracy improvements are a primary concern at this stage in the development of the switched-current technique. Use of the dynamic current mirror has produced circuits that are insensitive to transistor matching errors. The dynamic current mirror has been limited by other sources of error including clock-feedthrough and voltage transient errors. In this paper we present an improved switched-current building block using the dynamic current mirror. Utilizing current feedback the errors due to current imbalance in the dynamic current mirror are reduced. Simulations indicate that this feedback can reduce total harmonic distortion by as much as 9 dB. Additionally, we have developed a clock-feedthrough reduction scheme for which simulations reveal a potential 10 dB total harmonic distortion improvement. The clock-feedthrough reduction scheme also significantly reduces offset errors and allows for cancellation with a constant current source. Experimental results confirm the simulated improvements.

Beverton-Holt discrete pest management models with pulsed chemical control and evolution of pesticide resistance

NASA Astrophysics Data System (ADS)

Liang, Juhua; Tang, Sanyi; Cheke, Robert A.

2016-07-01

Pest resistance to pesticides is usually managed by switching between different types of pesticides. The optimal switching time, which depends on the dynamics of the pest population and on the evolution of the pesticide resistance, is critical. Here we address how the dynamic complexity of the pest population, the development of resistance and the spraying frequency of pulsed chemical control affect optimal switching strategies given different control aims. To do this, we developed novel discrete pest population growth models with both impulsive chemical control and the evolution of pesticide resistance. Strong and weak threshold conditions which guarantee the extinction of the pest population, based on the threshold values of the analytical formula for the optimal switching time, were derived. Further, we addressed switching strategies in the light of chosen economic injury levels. Moreover, the effects of the complex dynamical behaviour of the pest population on the pesticide switching times were also studied. The pesticide application period, the evolution of pesticide resistance and the dynamic complexity of the pest population may result in complex outbreak patterns, with consequent effects on the pesticide switching strategies.

Ferroelastic domain switching dynamics under electrical and mechanical excitations.

PubMed

Gao, Peng; Britson, Jason; Nelson, Christopher T; Jokisaari, Jacob R; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing

2014-05-02

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Ferroelastic domain switching dynamics under electrical and mechanical excitations

NASA Astrophysics Data System (ADS)

Gao, Peng; Britson, Jason; Nelson, Christopher T.; Jokisaari, Jacob R.; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M.; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing

2014-05-01

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Dynamics of phenotypic switching of bacterial cells with temporal fluctuations in pressure

NASA Astrophysics Data System (ADS)

Nepal, Sudip; Kumar, Pradeep

2018-05-01

Phenotypic switching is one of the mechanisms by which bacteria thrive in ever changing environmental conditions around them. Earlier studies have shown that the application of steady high hydrostatic pressure leads to stochastic switching of mesophilic bacteria from a cellular phenotype having a normal cell cycle to another phenotype lacking cell division. Here, we have studied the dynamics of this phenotypic switching with fluctuating periodic pressure using a set of experiments and a theoretical model. Our results suggest that the phenotypic switching rate from high-pressure phenotype to low-pressure phenotype in the reversible regime is larger as compared to the switching rate from low-pressure phenotype to high-pressure phenotype. Furthermore, we find that even though the cell division and elongation are presumably regulated by a large number of genes the underlying physics of the dynamics of stochastic switching at high pressure is captured reasonably well by a simple two-state model.

Ohmic Heating: An Emerging Concept in Organic Synthesis.

PubMed

Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

2017-06-12

The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High quality factor, fully switchable terahertz superconducting metasurface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scalari, G., E-mail: scalari@phys.ethz.ch; Maissen, C.; Faist, J.

2014-12-29

We present a complementary THz metasurface realised with Niobium thin film which displays a quality factor Q = 54 and a fully switchable behaviour as a function of the temperature. The switching behaviour and the high quality factor are due to a careful design of the metasurface aimed at maximising the ohmic losses when the Nb is above the critical temperature and minimising the radiative coupling. The superconductor allows the operation of the cavity with high Q and the use of inductive elements with a high aspect ratio. Comparison with three dimensional finite element simulations highlights the crucial role of the inductivemore » elements and of the kinetic inductance of the Cooper pairs in achieving the high quality factor and the high field enhancement.« less

Edge Ohmic Heating Experiment on HT-6M Tokamak

NASA Astrophysics Data System (ADS)

Gao, Xiang; Fan, Shuping; Li, Jian'gang; Meng, Yuedong; Luo, Jiarong; Yin, Fuxian; Zeng, Lei; Ding, Liancheng; Lin, Bili; Zhang, Wei; Han, Yuqing; Tong, Xingde; Luo, Lanchang; Gong, Xianzu; Jiang, Jiaguang; Wu, Mingjun; Yin, Fei

1994-03-01

An improved ohmic confinement has been achieved on HT-6M tokamak after application of edge ohmic heating pulse which makes plasma current rapidly ramp up (0.4 ms) in a ramp rate of 12 Ma/s. The improved ohmic confinement phase is characterized by (a) energy and particle confinement time increase, (b) non-symmetric increased density ne, (c) reduced Hα radiation, (d) increased Te and steeper Te, ne profile at the edge. The results from soft x-ray sawteeth inversion radius and βp + li/2 implied the anomalous current penetration.

Dual ohmic contact to N- and P-type silicon carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Ultrafast Coherent Dynamics of a Photonic Crystal All-Optical Switch.

PubMed

Colman, Pierre; Lunnemann, Per; Yu, Yi; Mørk, Jesper

2016-12-02

We present pump-probe measurements of an all-optical photonic crystal switch based on a nanocavity, resolving fast coherent temporal dynamics. The measurements demonstrate the importance of coherent effects typically neglected when considering nanocavity dynamics. In particular, we report the observation of an idler pulse and more than 10 dB parametric gain. The measurements are in good agreement with a theoretical model that ascribes the observation to oscillations of the free-carrier population in the nanocavity. The effect opens perspectives for the realization of new all-optical photonic crystal switches with unprecedented switching contrast.

Broadband optical switch based on liquid crystal dynamic scattering.

PubMed

Geis, M W; Bos, P J; Liberman, V; Rothschild, M

2016-06-27

This work demonstrates a novel broadband optical switch, based on dynamic-scattering effect in liquid crystals (LCs). Dynamic-scattering-mode technology was developed for display applications over four decades ago, but was displaced in favor of the twisted-nematic LCs. However, with the recent development of more stable LCs, dynamic scattering provides advantages over other technologies for optical switching. We demonstrate broadband polarization-insensitive attenuation of light directly passing thought the cell by 4 to 5 orders of magnitude at 633 nm. The attenuation is accomplished by light scattering to higher angles. Switching times of 150 μs to 10% transmission have been demonstrated. No degradation of devices is found after hundreds of switching cycles. The light-rejection mechanism is due to scattering, induced by disruption of LC director orientation with dopant ion motion with an applied electric field. Angular dependence of scattering is characterized as a function of bias voltage.

In situ oxygen plasma cleaning of microswitch surfaces—comparison of Ti and graphite electrodes

NASA Astrophysics Data System (ADS)

Oh, Changho; Streller, Frank; Ashurst, W. Robert; Carpick, Robert W.; de Boer, Maarten P.

2016-11-01

Ohmic micro- and nanoswitches are of interest for a wide variety of applications including radio frequency communications and as low power complements to transistors. In these switches, it is of paramount importance to maintain surface cleanliness in order to prevent frequent failure by tribopolymer growth. To prepare surfaces, an oxygen plasma clean is expected to be beneficial compared to a high temperature vacuum bakeout because of shorter cleaning time (<5 min compared to ~24 h) and active removal of organic contaminants. We demonstrate that sputtering of the electrode material during oxygen plasma cleaning is a critical consideration for effective cleaning of switch surfaces. With Ti electrodes, a TiO x layer forms that increases electrical contact resistance. When plasma-cleaned using graphite electrodes, the resistance of Pt-coated microswitches exhibit a long lifetime with consistently low resistance (<0.5 Ω variation over 300 million cycles) if the test chamber is refilled with ultra-high purity nitrogen and if the devices are not exposed to laboratory air. Their current-voltage characteristic is also linear at the millivolt level. This is important for nanoswitches which will be operated in that range.

Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, You-Lin, E-mail: ylwu@ncnu.edu.tw; Liao, Chun-Wei; Ling, Jing-Jenn

2014-06-16

The electrical characterization of HfO{sub 2}/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO{sub 2} surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO{sub 2}/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates.more » It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.« less

CALCULATING ROTATING HYDRODYNAMIC AND MAGNETOHYDRODYNAMIC WAVES TO UNDERSTAND MAGNETIC EFFECTS ON DYNAMICAL TIDES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Xing, E-mail: xing.wei@sjtu.edu.cn; Princeton University Observatory, Princeton, NJ 08544

2016-09-01

To understand magnetic effects on dynamical tides, we study the rotating magnetohydrodynamic (MHD) flow driven by harmonic forcing. The linear responses are analytically derived in a periodic box under the local WKB approximation. Both the kinetic and Ohmic dissipations at the resonant frequencies are calculated, and the various parameters are investigated. Although magnetic pressure may be negligible compared to thermal pressure, the magnetic field can be important for the first-order perturbation, e.g., dynamical tides. It is found that the magnetic field splits the resonant frequency, namely the rotating hydrodynamic flow has only one resonant frequency, but the rotating MHD flowmore » has two, one positive and the other negative. In the weak field regime the dissipations are asymmetric around the two resonant frequencies and this asymmetry is more striking with a weaker magnetic field. It is also found that both the kinetic and Ohmic dissipations at the resonant frequencies are inversely proportional to the Ekman number and the square of the wavenumber. The dissipation at the resonant frequency on small scales is almost equal to the dissipation at the non-resonant frequencies, namely the resonance takes its effect on the dissipation at intermediate length scales. Moreover, the waves with phase propagation that is perpendicular to the magnetic field are much more damped. It is also interesting to find that the frequency-averaged dissipation is constant. This result suggests that in compact objects, magnetic effects on tidal dissipation should be considered.« less

A physics-based fractional order model and state of energy estimation for lithium ion batteries. Part I: Model development and observability analysis

NASA Astrophysics Data System (ADS)

Li, Xiaoyu; Fan, Guodong; Pan, Ke; Wei, Guo; Zhu, Chunbo; Rizzoni, Giorgio; Canova, Marcello

2017-11-01

The design of a lumped parameter battery model preserving physical meaning is especially desired by the automotive researchers and engineers due to the strong demand for battery system control, estimation, diagnosis and prognostics. In light of this, a novel simplified fractional order electrochemical model is developed for electric vehicle (EV) applications in this paper. In the model, a general fractional order transfer function is designed for the solid phase lithium ion diffusion approximation. The dynamic characteristics of the electrolyte concentration overpotential are approximated by a first-order resistance-capacitor transfer function in the electrolyte phase. The Ohmic resistances and electrochemical reaction kinetics resistance are simplified to a lumped Ohmic resistance parameter. Overall, the number of model parameters is reduced from 30 to 9, yet the accuracy of the model is still guaranteed. In order to address the dynamics of phase-change phenomenon in the active particle during charging and discharging, variable solid-state diffusivity is taken into consideration in the model. Also, the observability of the model is analyzed on two types of lithium ion batteries subsequently. Results show the fractional order model with variable solid-state diffusivity agrees very well with experimental data at various current input conditions and is suitable for electric vehicle applications.

Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

NASA Astrophysics Data System (ADS)

Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

2018-06-01

The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

PubMed

Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

2017-07-01

Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

Distributed Consensus of Stochastic Delayed Multi-agent Systems Under Asynchronous Switching.

PubMed

Wu, Xiaotai; Tang, Yang; Cao, Jinde; Zhang, Wenbing

2016-08-01

In this paper, the distributed exponential consensus of stochastic delayed multi-agent systems with nonlinear dynamics is investigated under asynchronous switching. The asynchronous switching considered here is to account for the time of identifying the active modes of multi-agent systems. After receipt of confirmation of mode's switching, the matched controller can be applied, which means that the switching time of the matched controller in each node usually lags behind that of system switching. In order to handle the coexistence of switched signals and stochastic disturbances, a comparison principle of stochastic switched delayed systems is first proved. By means of this extended comparison principle, several easy to verified conditions for the existence of an asynchronously switched distributed controller are derived such that stochastic delayed multi-agent systems with asynchronous switching and nonlinear dynamics can achieve global exponential consensus. Two examples are given to illustrate the effectiveness of the proposed method.

Bottom-up on-crystal in-chip formation of a conducting salt and a view of its restructuring: from organic insulator to conducting "switch" through microfluidic manipulation.

PubMed

Puigmartí-Luis, Josep; Paradinas, Markos; Bailo, Elena; Rodriguez-Trujillo, Romen; Pfattner, Raphael; Ocal, Carmen; Amabilino, David B

2015-06-01

The chemical modification of an immobilized single crystal in a fluid cell is reported, whereby a material with switching functions is generated in situ by generating a chemical reagent in the flow. Crystals of the insulating organic crystal of TCNQ (tetracyanoquinodimethane) were grown in a microfluidic channel and were trapped using a pneumatic valve, a nascent technique for materials manipulation. They were subsequently reduced using solution-deposited silver to provide a conducting material in situ by a heterogeneous reaction. Removal of the new material from the chip proved it to be the silver salt of reduced TCNQ. Uniquely, conducting atomic force microscope (CAFM) studies show three regions in the solid. The localized original neutral organic material crystal is shown to be an insulator but to produce areas with Ohmic conducting characteristics after reduction. This inhomogeneous doping provides an opportunity for probing electrical materials properties side by side. Measurements with the CAFM witness this conducting material where the TCNQ is fully transformed to the silver salt. Additionally, an intermediate phase is observed that exhibits bipolar resistive switching typical of programmable resistive memories. Raman microscopy proves the conversion of the material in specific regions and clearly defines the intermediate phase region that could be responsible for the switching effect in related materials. This kind of "on crystal chemistry" exploiting immobilization and masking by a pneumatic clamp in a microfluidic channel shows how material can be selectively converted to give different functionalities in the same material piece, even though it is not a single crystal to single crystal conversion, and beckons exploitation for the preparation of systems relevant for molecular electronics as well as other areas where chemical manipulation of single crystals could be beneficial.

Fokker-Planck equation of the reduced Wigner function associated to an Ohmic quantum Langevin dynamics

NASA Astrophysics Data System (ADS)

Colmenares, Pedro J.

2018-05-01

This article has to do with the derivation and solution of the Fokker-Planck equation associated to the momentum-integrated Wigner function of a particle subjected to a harmonic external field in contact with an ohmic thermal bath of quantum harmonic oscillators. The strategy employed is a simplified version of the phenomenological approach of Schramm, Jung, and Grabert of interpreting the operators as c numbers to derive the quantum master equation arising from a twofold transformation of the Wigner function of the entire phase space. The statistical properties of the random noise comes from the integral functional theory of Grabert, Schramm, and Ingold. By means of a single Wigner transformation, a simpler equation than that mentioned before is found. The Wigner function reproduces the known results of the classical limit. This allowed us to rewrite the underdamped classical Langevin equation as a first-order stochastic differential equation with time-dependent drift and diffusion terms.

Measurements of the toroidal torque balance of error field penetration locked modes

DOE PAGES

Shiraki, Daisuke; Paz-Soldan, Carlos; Hanson, Jeremy M.; ...

2015-01-05

Here, detailed measurements from the DIII-D tokamak of the toroidal dynamics of error field penetration locked modes under the influence of slowly evolving external fields, enable study of the toroidal torques on the mode, including interaction with the intrinsic error field. The error field in these low density Ohmic discharges is well known based on the mode penetration threshold, allowing resonant and non-resonant torque effects to be distinguished. These m/n = 2/1 locked modes are found to be well described by a toroidal torque balance between the resonant interaction with n = 1 error fields, and a viscous torque inmore » the electron diamagnetic drift direction which is observed to scale as the square of the perturbed field due to the island. Fitting to this empirical torque balance allows a time-resolved measurement of the intrinsic error field of the device, providing evidence for a time-dependent error field in DIII-D due to ramping of the Ohmic coil current.« less

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

NASA Astrophysics Data System (ADS)

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

2018-03-01

We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO2-x thin films by reducing oxidant pulse time (0.7 s-0.1 s) and study its effect on resistive switching behavior with a Ti/HfO2-x/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO2-x sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (χ) of HfO2 and HfO2-x thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO2 thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO2-x thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO2-x/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained.

Ultra-thin ohmic contacts for p-type nitride light emitting devices

DOEpatents

Raffetto, Mark [Raleigh, NC; Bharathan, Jayesh [Cary, NC; Haberern, Kevin [Cary, NC; Bergmann, Michael [Chapel Hill, NC; Emerson, David [Chapel Hill, NC; Ibbetson, James [Santa Barbara, CA; Li, Ting [Ventura, CA

2012-01-03

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

Structural Dynamics in Ras and Related Proteins upon Nucleotide Switching.

PubMed

Harrison, Rane A; Lu, Jia; Carrasco, Martin; Hunter, John; Manandhar, Anuj; Gondi, Sudershan; Westover, Kenneth D; Engen, John R

2016-11-20

Structural dynamics of Ras proteins contributes to their activity in signal transduction cascades. Directly targeting Ras proteins with small molecules may rely on the movement of a conserved structural motif, switch II. To understand Ras signaling and advance Ras-targeting strategies, experimental methods to measure Ras dynamics are required. Here, we demonstrate the utility of hydrogen-deuterium exchange (HDX) mass spectrometry (MS) to measure Ras dynamics by studying representatives from two branches of the Ras superfamily, Ras and Rho. A comparison of differential deuterium exchange between active (GMPPNP-bound) and inactive (GDP-bound) proteins revealed differences between the families, with the most notable differences occurring in the phosphate-binding loop and switch II. The P-loop exchange signature correlated with switch II dynamics observed in molecular dynamics simulations focused on measuring main-chain movement. HDX provides a means of evaluating Ras protein dynamics, which may be useful for understanding the mechanisms of Ras signaling, including activated signaling of pathologic mutants, and for targeting strategies that rely on protein dynamics. Copyright © 2016 Elsevier Ltd. All rights reserved.

Dynamic switching enables efficient bacterial colonization in flow.

PubMed

Kannan, Anerudh; Yang, Zhenbin; Kim, Minyoung Kevin; Stone, Howard A; Siryaporn, Albert

2018-05-22

Bacteria colonize environments that contain networks of moving fluids, including digestive pathways, blood vasculature in animals, and the xylem and phloem networks in plants. In these flow networks, bacteria form distinct biofilm structures that have an important role in pathogenesis. The physical mechanisms that determine the spatial organization of bacteria in flow are not understood. Here, we show that the bacterium P. aeruginosa colonizes flow networks using a cyclical process that consists of surface attachment, upstream movement, detachment, movement with the bulk flow, and surface reattachment. This process, which we have termed dynamic switching, distributes bacterial subpopulations upstream and downstream in flow through two phases: movement on surfaces and cellular movement via the bulk. The model equations that describe dynamic switching are identical to those that describe dynamic instability, a process that enables microtubules in eukaryotic cells to search space efficiently to capture chromosomes. Our results show that dynamic switching enables bacteria to explore flow networks efficiently, which maximizes dispersal and colonization and establishes the organizational structure of biofilms. A number of eukaryotic and mammalian cells also exhibit movement in two phases in flow, which suggests that dynamic switching is a modality that enables efficient dispersal for a broad range of cell types.

Fabricating Ohmic contact on Nb-doped SrTiO{sub 3} surface in nanoscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuhang; National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang, Sichuan 621999; Shi, Xiaolan

2016-05-09

Fabricating reliable nano-Ohmic contact on wide gap semiconductors is an important yet difficult step in oxide nanoelectronics. We fabricated Ohmic contact on the n-type wide gap oxide Nb-doped SrTiO{sub 3} in nanoscale by mechanically scratching the surface using an atomic force microscopy tip. Although contacted to high work function metal, the scratched area exhibits nearly linear IV behavior with low contact resistance, which maintains for hours in vacuum. In contrast, the unscratched area shows Fowler–Nordheim tunneling dominated Schottky rectifying behavior with high contact resistance. It was found that the Ohmic conductivity in the scratched area was drastically suppressed by oxygenmore » gas indicating the oxygen vacancy origin of the Ohmic behavior. The surface oxygen vacancy induced barrier width reduction was proposed to explain the phenomena. The nanoscale approach is also applicable to macroscopic devices and has potential application in all-oxide devices.« less

Development of Numerical Methods to Estimate the Ohmic Breakdown Scenarios of a Tokamak

NASA Astrophysics Data System (ADS)

Yoo, Min-Gu; Kim, Jayhyun; An, Younghwa; Hwang, Yong-Seok; Shim, Seung Bo; Lee, Hae June; Na, Yong-Su

2011-10-01

The ohmic breakdown is a fundamental method to initiate the plasma in a tokamak. For the robust breakdown, ohmic breakdown scenarios have to be carefully designed by optimizing the magnetic field configurations to minimize the stray magnetic fields. This research focuses on development of numerical methods to estimate the ohmic breakdown scenarios by precise analysis of the magnetic field configurations. This is essential for the robust and optimal breakdown and start-up of fusion devices especially for ITER and its beyond equipped with low toroidal electric field (ET <= 0.3 V/m). A field-line-following analysis code based on the Townsend avalanche theory and a particle simulation code are developed to analyze the breakdown characteristics of actual complex magnetic field configurations including the stray magnetic fields in tokamaks. They are applied to the ohmic breakdown scenarios of tokamaks such as KSTAR and VEST and compared with experiments.

A Study on Ohmic Contact to Dry-Etched p-GaN

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Ao, Jin-Ping; Okada, Masaya; Ohno, Yasuo

Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000°C 30s) was tried on the SiCl4/Cl2-etched p-GaN and Ohmic contact was obtained.

Hyperswitch Network For Hypercube Computer

NASA Technical Reports Server (NTRS)

Chow, Edward; Madan, Herbert; Peterson, John

1989-01-01

Data-driven dynamic switching enables high speed data transfer. Proposed hyperswitch network based on mixed static and dynamic topologies. Routing header modified in response to congestion or faults encountered as path established. Static topology meets requirement if nodes have switching elements that perform necessary routing header revisions dynamically. Hypercube topology now being implemented with switching element in each computer node aimed at designing very-richly-interconnected multicomputer system. Interconnection network connects great number of small computer nodes, using fixed hypercube topology, characterized by point-to-point links between nodes.

Effects of fundamentals acquisition and strategy switch on stock price dynamics

NASA Astrophysics Data System (ADS)

Wu, Songtao; He, Jianmin; Li, Shouwei

2018-02-01

An agent-based artificial stock market is developed to simulate trading behavior of investors. In the market, acquisition and employment of information about fundamentals and strategy switch are investigated to explain stock price dynamics. Investors could obtain the information from both market and neighbors resided on their social networks. Depending on information status and performances of different strategies, an informed investor may switch to the strategy of fundamentalist. This in turn affects the information acquisition process, since fundamentalists are more inclined to search and spread the information than chartists. Further investigation into price dynamics generated from three typical networks, i.e. regular lattice, small-world network and random graph, are conducted after general relation between network structures and price dynamics is revealed. In each network, integrated effects of different combinations of information efficiency and switch intensity are investigated. Results have shown that, along with increasing switch intensity, market and social information efficiency play different roles in the formation of price distortion, standard deviation and kurtosis of returns.

Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

PubMed

Yang, Xiang; Chen, I-Wei

2012-01-01

Bipolar resistance-switching materials allowing intermediate states of wide-varying resistance values hold the potential of drastically reduced power for non-volatile memory. To exploit this potential, we have introduced into a nanometallic resistance-random-access-memory (RRAM) device an asymmetric dynamic load, which can reliably lower switching power by orders of magnitude. The dynamic load is highly resistive during on-switching allowing access to the highly resistive intermediate states; during off-switching the load vanishes to enable switching at low voltage. This approach is entirely scalable and applicable to other bipolar RRAM with intermediate states. The projected power is 12 nW for a 100 × 100 nm(2) device and 500 pW for a 10 × 10 nm(2) device. The dynamic range of the load can be increased to allow power to be further decreased by taking advantage of the exponential decay of wave-function in a newly discovered nanometallic random material, reaching possibly 1 pW for a 10×10 nm(2) nanometallic RRAM device.

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

PubMed

Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

2010-07-27

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Durai, Suresh; Manivannan, Anbarasu

2016-11-01

Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains a key challenge. In this work, a correlation between the rate of applied voltage and the dynamics of threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature of enabling a rapid threshold-switching at a critical voltage known as the threshold voltage as validated by an instantaneous response of steep current rise from an amorphous off to on state is achieved within 250 picoseconds and this is followed by a slower current rise leading to crystallization. Also, we demonstrate that the extraordinary nature of threshold-switching dynamics in AgInSbTe cells is independent to the rate of applied voltage unlike other chalcogenide-based phase change materials exhibiting the voltage dependent transient switching characteristics. Furthermore, numerical solutions of time-dependent conduction process validate the experimental results, which reveal the electronic nature of threshold-switching. These findings of steep threshold-switching of ‘sub-50 ps delay time’, opens up a new way for achieving high-speed non-volatile memory for mainstream computing.

Switching Dynamics of an Underdamped Josephson Junction Coupled to a Microwave Cavity

NASA Astrophysics Data System (ADS)

Oelsner, G.; Il'ichev, E.

2018-05-01

Current-biased Josephson junctions are promising candidates for the detection of single photons in the microwave frequency domain. With modern fabrication technologies, the switching properties of the junction can be adjusted to achieve quantum limited sensitivity. Namely, the width of the switching current distribution can be reduced well below the current amplitude produced by a single photon trapped inside a superconducting cavity. However, for an effective detection a strong junction cavity coupling is required, providing nonlinear system dynamics. We compare experimental findings for our prototype device with a theoretical analysis aimed to describe the switching dynamics of junctions under microwave irradiation. Measurements are found in qualitative agreement with our simulations.

Heteroclinic switching between chimeras

NASA Astrophysics Data System (ADS)

Bick, Christian

2018-05-01

Functional oscillator networks, such as neuronal networks in the brain, exhibit switching between metastable states involving many oscillators. We give exact results how such global dynamics can arise in paradigmatic phase oscillator networks: Higher-order network interactions give rise to metastable chimeras—localized frequency synchrony patterns—which are joined by heteroclinic connections. Moreover, we illuminate the mechanisms that underly the switching dynamics in these experimentally accessible networks.

Allosteric Fine-Tuning of the Binding Pocket Dynamics in the ITK SH2 Domain by a Distal Molecular Switch: An Atomistic Perspective.

PubMed

Momin, Mohamed; Xin, Yao; Hamelberg, Donald

2017-06-29

Although the regulation of function of proteins by allosteric interactions has been identified in many subcellular processes, molecular switches are also known to induce long-range conformational changes in proteins. A less well understood molecular switch involving cis-trans isomerization of a peptidyl-prolyl bond could induce a conformational change directly to the backbone that is propagated to other parts of the protein. However, these switches are elusive and hard to identify because they are intrinsic to biomolecules that are inherently dynamic. Here, we explore the conformational dynamics and free energy landscape of the SH2 domain of interleukin-2-inducible T-cell or tyrosine kinase (ITK) to fully understand the conformational coupling between the distal cis-trans molecular switch and its binding pocket of the phosphotyrosine motif. We use multiple microsecond-long all-atom molecular dynamics simulations in explicit water for over a total of 60 μs. We show that cis-trans isomerization of the Asn286-Pro287 peptidyl-prolyl bond is directly coupled to the dynamics of the binding pocket of the phosphotyrosine motif, in agreement with previous NMR experiments. Unlike the cis state that is localized and less dynamic in a single free energy basin, the trans state samples two distinct conformations of the binding pocket-one that recognizes the phosphotyrosine motif and the other that is somewhat similar to that of the cis state. The results provide an atomic-level description of a less well understood allosteric regulation by a peptidyl-prolyl cis-trans molecular switch that could aid in the understanding of normal and aberrant subcellular processes and the identification of these elusive molecular switches in other proteins.

Continuous-variable quantum teleportation in bosonic structured environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

He Guangqiang; Zhang Jingtao; Zhu Jun

2011-09-15

The effects of dynamics of continuous-variable entanglement under the various kinds of environments on quantum teleportation are quantitatively investigated. Only under assumption of the weak system-reservoir interaction, the evolution of teleportation fidelity is analytically derived and is numerically plotted in terms of environment parameters including reservoir temperature and its spectral density, without Markovian and rotating wave approximations. We find that the fidelity of teleportation is a monotonically decreasing function for Markovian interaction in Ohmic-like environments, while it oscillates for non-Markovian ones. According to the dynamical laws of teleportation, teleportation with better performances can be implemented by selecting the appropriate time.

Sparse polynomial space approach to dissipative quantum systems: application to the sub-ohmic spin-boson model.

PubMed

Alvermann, A; Fehske, H

2009-04-17

We propose a general numerical approach to open quantum systems with a coupling to bath degrees of freedom. The technique combines the methodology of polynomial expansions of spectral functions with the sparse grid concept from interpolation theory. Thereby we construct a Hilbert space of moderate dimension to represent the bath degrees of freedom, which allows us to perform highly accurate and efficient calculations of static, spectral, and dynamic quantities using standard exact diagonalization algorithms. The strength of the approach is demonstrated for the phase transition, critical behavior, and dissipative spin dynamics in the spin-boson model.

[Acceleration of osmotic dehydration process through ohmic heating of foods: raspberries (Rubus idaeus)].

PubMed

Simpson, Ricardo R; Jiménez, Maite P; Carevic, Erica G; Grancelli, Romina M

2007-06-01

Raspberries (Rubus idaeus) were osmotically dehydrated by applying a conventional method under the supposition of a homogeneous solution, all in a 62% glucose solution at 50 degrees C. Raspberries (Rubus idaeus) were also osmotically dehydrated by using ohmic heating in a 57% glucose solution at a variable voltage (to maintain temperature between 40 and 50 degrees C) and an electric field intensity <100 V/cm. When comparing the results from both experiments it was evident that processing time is reduced when ohmic heating technique was used. In some cases this reduction reached even 50%. This is explained by the additional effect to the thermal damage that is generated in an ohmic process, denominated electroporation.

Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

NASA Astrophysics Data System (ADS)

Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

2010-11-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

PubMed

Polley, Craig M; Clarke, Warrick R; Simmons, Michelle Y

2011-10-03

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

Dynamical mechanical characteristic simulation and analysis of the low voltage switch under vibration and shock conditions

NASA Astrophysics Data System (ADS)

Miao, Xiaodan; Han, Feng

2017-04-01

The low voltage switch has widely application especially in the hostile environment such as large vibration and shock conditions. In order to ensure the validity of the switch in the hostile environment, it is necessary to predict its mechanical characteristic. In traditional method, the complex and expensive testing system is build up to verify its validity. This paper presented a method based on finite element analysis to predict the dynamic mechanical characteristic of the switch by using ANSYS software. This simulation could provide the basis for the design and optimization of the switch to shorten the design process to improve the product efficiency.

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

PubMed

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Innovative food processing technology using ohmic heating and aseptic packaging for meat.

PubMed

Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

2014-02-01

Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

High magnetic field ohmically decoupled non-contact technology

DOEpatents

Wilgen, John [Oak Ridge, TN; Kisner, Roger [Knoxville, TN; Ludtka, Gerard [Oak Ridge, TN; Ludtka, Gail [Oak Ridge, TN; Jaramillo, Roger [Knoxville, TN

2009-05-19

Methods and apparatus are described for high magnetic field ohmically decoupled non-contact treatment of conductive materials in a high magnetic field. A method includes applying a high magnetic field to at least a portion of a conductive material; and applying an inductive magnetic field to at least a fraction of the conductive material to induce a surface current within the fraction of the conductive material, the surface current generating a substantially bi-directional force that defines a vibration. The high magnetic field and the inductive magnetic field are substantially confocal, the fraction of the conductive material is located within the portion of the conductive material and ohmic heating from the surface current is ohmically decoupled from the vibration. An apparatus includes a high magnetic field coil defining an applied high magnetic field; an inductive magnetic field coil coupled to the high magnetic field coil, the inductive magnetic field coil defining an applied inductive magnetic field; and a processing zone located within both the applied high magnetic field and the applied inductive magnetic field. The high magnetic field and the inductive magnetic field are substantially confocal, and ohmic heating of a conductive material located in the processing zone is ohmically decoupled from a vibration of the conductive material.

Principles of dynamical modularity in biological regulatory networks

PubMed Central

Deritei, Dávid; Aird, William C.; Ercsey-Ravasz, Mária; Regan, Erzsébet Ravasz

2016-01-01

Intractable diseases such as cancer are associated with breakdown in multiple individual functions, which conspire to create unhealthy phenotype-combinations. An important challenge is to decipher how these functions are coordinated in health and disease. We approach this by drawing on dynamical systems theory. We posit that distinct phenotype-combinations are generated by interactions among robust regulatory switches, each in control of a discrete set of phenotypic outcomes. First, we demonstrate the advantage of characterizing multi-switch regulatory systems in terms of their constituent switches by building a multiswitch cell cycle model which points to novel, testable interactions critical for early G2/M commitment to division. Second, we define quantitative measures of dynamical modularity, namely that global cell states are discrete combinations of switch-level phenotypes. Finally, we formulate three general principles that govern the way coupled switches coordinate their function. PMID:26979940

Effect of Electropermeabilization by Ohmic Heating for Inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium, and Listeria monocytogenes in Buffered Peptone Water and Apple Juice

PubMed Central

Park, Il-Kyu

2013-01-01

The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (P < 0.05) from that resulting from conventional heating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (P < 0.05), and these differences increased with increasing levels of inactivation of three food-borne pathogens. These results demonstrate that ohmic heating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating. PMID:23995939

Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

PubMed

Park, Il-Kyu; Kang, Dong-Hyun

2013-12-01

The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (P<0.05) from that resulting from conventional heating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (P<0.05), and these differences increased with increasing levels of inactivation of three food-borne pathogens. These results demonstrate that ohmic heating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

Effect of delta tabs on mixing and axis switching in jets from asymmetric nozzles

NASA Technical Reports Server (NTRS)

Zaman, K. B. M. Q.

1994-01-01

The effect of delta tabs on mixing and the phenomenon of axis switching in free air jets from various asymmetric nozzles was studied experimentally. Flow visualization and Pitot probe surveys were carried out with a set of small nozzles (D = 1.47 cm) at a jet Mach number, Mj = 1.63. Hot wire measurements for streamwise vorticity were carried out with larger nozzles (D = 6.35 cm) at Mj = 0.31. Jet mixing with the asymmetric nozzles, as indicated by the mass fluxes downstream, was found to be higher than that produced by a circular nozzle. The circular nozzle with four delta tabs, however, produced fluxes much higher than that produced by a asymmetric nozzles themselves or by most of the tab configurations tried with them. Even higher fluxes could be obtained with only a few cases, e.g., with 3:1 rectangular nozzle with two large delta tabs placed on the narrow edges. In this case, the jet 'fanned out' at a large angle after going through one axis switch. The axis switching could be either stopped or augmented with suitable choice of the tab configurations. Two mechanisms are identified governing the phenomenon. One, as described in Ref. 12 and referred to here as the omega(sub Theta)-induced dynamics, is due to differential induced velocities of different segments of a rolled up azimuthal vortical structure. The other is the omega(sub x)-induced dynamics due to the induced velocities of streamwise vortex pairs in the flow. While the former dynamics are responsible for rapid axis switching in periodically forced jets, the effect of the tabs is governed mainly by the latter. It is inferred that both dynamics are active in a natural asymmetric jet issuing from a nozzle having an upstream contraction. The tendency for axis switching caused by the omega(sub Theta)-induced dynamics is resisted by the omega(sub x)-induced dynamics, leading to a delayed or no switch over in that case. In jets from orifices and in screeching jets, the omega(sub Theta)-induced dynamics dominate causing a faster switch over.

Axis switching and spreading of an asymmetric jet: Role of vorticity dynamics

NASA Technical Reports Server (NTRS)

Zaman, K. B. M. Q.

1994-01-01

The effects of vortex generators and periodic excitation on vorticity dynamics and the phenomenon of axis switching in a free asymmetric jet are studied experimentally. Most of the data reported are for a 3:1 rectangular jet at a Reynolds number of 450,000 and a Mach number of 0.31. The vortex generators are in the form of 'delta tabs', triangular shaped protrusions into the flow, placed at the nozzle exit. With suitable placement of the tabs, axis switching could be either stopped or augmented. Two mechanisms are identified governing the phenomenon. One, as described by previous researchers and referred to here as the omega(sub theta)-induced dynamics, is due to difference in induced velocities for different segments of a rolled up azimuthal vortical structure. The other, omega(sub x)-induced dynamics, is due to the induced velocities of streamwise vortex pairs in the flow. Both dynamics can be active in a natural asymmetric jet; the tendency for axis switching caused by the omega(sub theta)-induced dynamics may be, depending on the streamwise vorticity distribution, either resisted or enhanced by the omega(sub x)-induced dynamics. While this simple framework qualitatively explains the various observations made on axis switching, mechanisms actually in play may be much more complex. The two dynamics are not independent as the flow field is replete with both azimuthal and streamwise vortical structures which continually interact. Phase averaged flow field data for a periodically forced case, over a volume of the flow field, are presented and discussed in an effort to gain insight into the dynamics of these vortical structures.

Antiferroelectric polarization switching and dynamic scaling of energy storage: A Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Huang, B. Y.; Lu, Z. X.; Zhang, Y.; Xie, Y. L.; Zeng, M.; Yan, Z. B.; Liu, J.-M.

2016-05-01

The polarization-electric field hysteresis loops and the dynamics of polarization switching in a two-dimensional antiferroelectric (AFE) lattice submitted to a time-oscillating electric field E(t) of frequency f and amplitude E0, is investigated using Monte Carlo simulation based on the Landau-Devonshire phenomenological theory on antiferroelectrics. It is revealed that the AFE double-loop hysteresis area A, i.e., the energy loss in one cycle of polarization switching, exhibits the single-peak frequency dispersion A(f), suggesting the unique characteristic time for polarization switching, which is independent of E0 as long as E0 is larger than the quasi-static coercive field for the antiferroelectric-ferroelectric transitions. However, the dependence of recoverable stored energy W on amplitude E0 seems to be complicated depending on temperature T and frequency f. A dynamic scaling behavior of the energy loss dispersion A(f) over a wide range of E0 is obtained, confirming the unique characteristic time for polarization switching of an AFE lattice. The present simulation may shed light on the dynamics of energy storage and release in AFE thin films.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Ultra-thin ohmic contacts for p-type nitride light emitting devices

DOEpatents

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

NASA Astrophysics Data System (ADS)

Abanov, Artem; Tretiakov, Oleg; Liu, Yang

2011-03-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

PubMed Central

2011-01-01

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

Dynamics of optical matter creation and annihilation in colloidal liquids controlled by laser trapping power.

PubMed

Liu, Jin; Dai, Qiao-Feng; Huang, Xu-Guang; Wu, Li-Jun; Guo, Qi; Hu, Wei; Yang, Xiang-Bo; Lan, Sheng; Gopal, Achanta Venu; Trofimov, Vyacheslav A

2008-11-15

We investigate the dynamics of optical matter creation and annihilation in a colloidal liquid that was employed to construct an all-optical switch. It is revealed that the switching-on process can be characterized by the Fermi-Dirac distribution function, while the switching-off process can be described by a steady state followed by a single exponential decay. The phase transition times exhibit a strong dependence on trapping power. With an increasing trapping power, while the switching-on time decreases rapidly, the switch-off time increases significantly, indicating the effects of optical binding and van der Waals force on the lifetime of the optical matter.

Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism

NASA Astrophysics Data System (ADS)

Wang, Ziwen; Kumar, Suhas; Nishi, Yoshio; Wong, H.-S. Philip

2018-05-01

Niobium oxide (NbOx) two-terminal threshold switches are potential candidates as selector devices in crossbar memory arrays and as building blocks for neuromorphic systems. However, the physical mechanism of NbOx threshold switches is still under debate. In this paper, we show that a thermal feedback mechanism based on Poole-Frenkel conduction can explain both the quasi-static and the transient electrical characteristics that are experimentally observed for NbOx threshold switches, providing strong support for the validity of this mechanism. Furthermore, a clear picture of the transient dynamics during the thermal-feedback-induced threshold switching is presented, providing useful insights required to model nonlinear devices where thermal feedback is important.

A network of molecular switches controls the activation of the two-component response regulator NtrC

NASA Astrophysics Data System (ADS)

Vanatta, Dan K.; Shukla, Diwakar; Lawrenz, Morgan; Pande, Vijay S.

2015-06-01

Recent successes in simulating protein structure and folding dynamics have demonstrated the power of molecular dynamics to predict the long timescale behaviour of proteins. Here, we extend and improve these methods to predict molecular switches that characterize conformational change pathways between the active and inactive state of nitrogen regulatory protein C (NtrC). By employing unbiased Markov state model-based molecular dynamics simulations, we construct a dynamic picture of the activation pathways of this key bacterial signalling protein that is consistent with experimental observations and predicts new mutants that could be used for validation of the mechanism. Moreover, these results suggest a novel mechanistic paradigm for conformational switching.

Self-Induced Switchings between Multiple Space-Time Patterns on Complex Networks of Excitable Units

NASA Astrophysics Data System (ADS)

Ansmann, Gerrit; Lehnertz, Klaus; Feudel, Ulrike

2016-01-01

We report on self-induced switchings between multiple distinct space-time patterns in the dynamics of a spatially extended excitable system. These switchings between low-amplitude oscillations, nonlinear waves, and extreme events strongly resemble a random process, although the system is deterministic. We show that a chaotic saddle—which contains all the patterns as well as channel-like structures that mediate the transitions between them—is the backbone of such a pattern-switching dynamics. Our analyses indicate that essential ingredients for the observed phenomena are that the system behaves like an inhomogeneous oscillatory medium that is capable of self-generating spatially localized excitations and that is dominated by short-range connections but also features long-range connections. With our findings, we present an alternative to the well-known ways to obtain self-induced pattern switching, namely, noise-induced attractor hopping, heteroclinic orbits, and adaptation to an external signal. This alternative way can be expected to improve our understanding of pattern switchings in spatially extended natural dynamical systems like the brain and the heart.

Microsecond switchable thermal antenna

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ben-Abdallah, Philippe, E-mail: pba@institutoptique.fr; Benisty, Henri; Besbes, Mondher

2014-07-21

We propose a thermal antenna that can be actively switched on and off at the microsecond scale by means of a phase transition of a metal-insulator material, the vanadium dioxide (VO{sub 2}). This thermal source is made of a periodically patterned tunable VO{sub 2} nanolayer, which support a surface phonon-polariton in the infrared range in their crystalline phase. Using electrodes properly registered with respect to the pattern, the VO{sub 2} phase transition can be locally triggered by ohmic heating so that the surface phonon-polariton can be diffracted by the induced grating, producing a highly directional thermal emission. Conversely, when heatingmore » less, the VO{sub 2} layers cool down below the transition temperature, the surface phonon-polariton cannot be diffracted anymore so that thermal emission is inhibited. This switchable antenna could find broad applications in the domain of active thermal coatings or in those of infrared spectroscopy and sensing.« less

Development of a satellite microwave radiometer to sense the surface temperature of the world oceans

NASA Technical Reports Server (NTRS)

Hidy, G. M.; Hall, W. F.; Hardy, W. N.; Ho, W. W.; Jones, A. C.; Love, A. W.; Vannmell, M. J.; Wang, H. H.; Wheeler, A. E.

1972-01-01

A proposed S-band radiometer for determining the ocean surface temperature with an absolute accuracy of + or - 1 Kelvin and a resolution of + or - .1 Kelvin was placed under the Advanced Applications Flight Experiment for further development into Nimbus readiness state. The results of assessing the following are described: effects due to the state of the sea surface, effects caused by the intervening atmosphere, and effects associated with imperfections in the instrument itself. An extensive sea truth program is also described for correlation of aircraft test flight measurements or of satellite remote measurement to in-situ data. An improved radiometer design is a modified Dicke-switch type with temperature stabilized, microwave integrated circuit, front-end and with a pulsed injection-noise nulling system. The radiometer has a multimode rectangular horn antenna with very low ohmic losses and a beam efficiency of 98% or better.

Markov switching of the electricity supply curve and power prices dynamics

NASA Astrophysics Data System (ADS)

Mari, Carlo; Cananà, Lucianna

2012-02-01

Regime-switching models seem to well capture the main features of power prices behavior in deregulated markets. In a recent paper, we have proposed an equilibrium methodology to derive electricity prices dynamics from the interplay between supply and demand in a stochastic environment. In particular, assuming that the supply function is described by a power law where the exponent is a two-state strictly positive Markov process, we derived a regime switching dynamics of power prices in which regime switches are induced by transitions between Markov states. In this paper, we provide a dynamical model to describe the random behavior of power prices where the only non-Brownian component of the motion is endogenously introduced by Markov transitions in the exponent of the electricity supply curve. In this context, the stochastic process driving the switching mechanism becomes observable, and we will show that the non-Brownian component of the dynamics induced by transitions from Markov states is responsible for jumps and spikes of very high magnitude. The empirical analysis performed on three Australian markets confirms that the proposed approach seems quite flexible and capable of incorporating the main features of power prices time-series, thus reproducing the first four moments of log-returns empirical distributions in a satisfactory way.

Study on Matching a 300 MVA Motor Generator with an Ohmic Heating Power Supply in HL-2M

NASA Astrophysics Data System (ADS)

Peng, Jianfei; Xuan, Weimin; Wang, Haibing; Li, Huajun; Wang, Yingqiao; Wang, Shujin

2013-03-01

A new 300 MVA/1350 MJ motor generator (MG) will be built to feed all of the poloidal field power supplies (PFPS) and auxiliary heating power supplies of the HL-2M tokamak. The MG has a vertical-shaft salient pole 6-phase synchronous generator and a coaxial 8500 kW induction motor. The Ohmic heating power supply (OHPS) consisting of 4-quadrant DC pulsed convertor is the one with the highest parameters among the PFPS. Therefore, the match between the generator and the OHPS is very important. The matching study with Matlab/Simulink is described in this paper. The simulation results show that the subtransient reactance of the generator is closely related to the inversion operation of the OHPS. By setting various subtransient reactance in the simulation generator model and considering the cost reduction, the optimized parameters are obtained as x″d = 0.405 p.u. at 100 Hz for the generator. The models built in the simulation can be used as an important tool for studying the dynamic characteristics and the control strategy of other HL-2M PFPSes.

Multistability and hidden attractors in a relay system with hysteresis

NASA Astrophysics Data System (ADS)

Zhusubaliyev, Zhanybai T.; Mosekilde, Erik; Rubanov, Vasily G.; Nabokov, Roman A.

2015-06-01

For nonlinear dynamic systems with switching control, the concept of a "hidden attractor" naturally applies to a stable dynamic state that either (1) coexists with the stable switching cycle or (2), if the switching cycle is unstable, has a basin of attraction that does not intersect with the neighborhood of that cycle. We show how the equilibrium point of a relay system disappears in a boundary-equilibrium bifurcation as the system enters the region of autonomous switching dynamics and demonstrate experimentally how a relay system can exhibit large amplitude chaotic oscillations at high values of the supply voltage. By investigating a four-dimensional model of the experimental relay system we finally show how a variety of hidden periodic, quasiperiodic and chaotic attractors arise, transform and disappear through different bifurcations.

Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes

NASA Astrophysics Data System (ADS)

Wu, Ning; Xiong, Zhihua; Qin, Zhenzhen

2018-02-01

By investigating the effect of a defective interface structure on Ag-based Ohmic contact of GaN-based vertical light-emitting diodes, we found a direct relationship between the interfacial composition and the Schottky barrier height of the Ag(111)/GaN(0001) interface. It was demonstrated that the Schottky barrier height of a defect-free Ag(111)/GaN(0001) interface was 2.221 eV, and it would be dramatically decreased to 0.375 eV with the introduction of one Ni atom and one Ga vacancy at the interface structure. It was found that the tunability of the Schottky barrier height can be attributed to charge accumulations around the interfacial defective regions and an unpinning of the Fermi level, which explains the experimental phenomenon of Ni-assisted annealing improving the p-type Ohmic contact characteristic. Lastly, we propose a new method of using Cu as an assisted metal to realize a novel Ag-based Ohmic contact. These results provide a guideline for the fabrication of high-quality Ag-based Ohmic contact of GaN-based vertical light-emitting diodes.

DNA-Binding Kinetics Determines the Mechanism of Noise-Induced Switching in Gene Networks

PubMed Central

Tse, Margaret J.; Chu, Brian K.; Roy, Mahua; Read, Elizabeth L.

2015-01-01

Gene regulatory networks are multistable dynamical systems in which attractor states represent cell phenotypes. Spontaneous, noise-induced transitions between these states are thought to underlie critical cellular processes, including cell developmental fate decisions, phenotypic plasticity in fluctuating environments, and carcinogenesis. As such, there is increasing interest in the development of theoretical and computational approaches that can shed light on the dynamics of these stochastic state transitions in multistable gene networks. We applied a numerical rare-event sampling algorithm to study transition paths of spontaneous noise-induced switching for a ubiquitous gene regulatory network motif, the bistable toggle switch, in which two mutually repressive genes compete for dominant expression. We find that the method can efficiently uncover detailed switching mechanisms that involve fluctuations both in occupancies of DNA regulatory sites and copy numbers of protein products. In addition, we show that the rate parameters governing binding and unbinding of regulatory proteins to DNA strongly influence the switching mechanism. In a regime of slow DNA-binding/unbinding kinetics, spontaneous switching occurs relatively frequently and is driven primarily by fluctuations in DNA-site occupancies. In contrast, in a regime of fast DNA-binding/unbinding kinetics, switching occurs rarely and is driven by fluctuations in levels of expressed protein. Our results demonstrate how spontaneous cell phenotype transitions involve collective behavior of both regulatory proteins and DNA. Computational approaches capable of simulating dynamics over many system variables are thus well suited to exploring dynamic mechanisms in gene networks. PMID:26488666

Effect of reflective p-type ohmic contact on thermal reliability of vertical InGaN/GaN LEDs

NASA Astrophysics Data System (ADS)

Son, Jun Ho; Song, Yang Hee; Kim, Buem Joon; Lee, Jong-Lam

2014-11-01

We report on the enhanced thermal reliability of vertical-LEDs (VLEDs) using novel reflective p-type ohmic contacts with good thermal stability. The reflective p-type ohmic contacts with Ni/Ag-Cu alloy multi-layer structure shows low contact resistivity, as low as 9.3 × 10-6 Ωcm2, and high reflectance of 86% after annealing at 450°C. The V-LEDs with Ni/Ag-Cu alloy multi-layer structure show good thermal reliability with stress time at 300°C in air ambient. The improved thermal stability of the reflective ohmic contacts to p-type GaN is believed to play a critical role in the thermal reliability of V-LEDs. [Figure not available: see fulltext.

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

DOE PAGES

Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; ...

2015-04-27

We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and aftermore » BOE exposure.« less

Features of Stationary Photoconductivity of High-Ohmic Semiconductors Under Local Illumination

NASA Astrophysics Data System (ADS)

Lysenko, A. P.; Belov, A. G.; Kanevskii, V. E.; Odintsova, E. A.

2018-04-01

Photoconductivity has been thoroughly studied for a long time. However, most researchers have examined photoconductivity of semiconductors while illuminating the entire surface of samples. The present paper examines the effect of local exposure that ensures a high level of injection of free charge carriers upon the conductivity of high-ohmic cadmium telluride and semi-insulating gallium arsenide samples and upon the properties of ohmic contacts to samples. The authors found that regardless of the exposure area the value of transition resistance of ohmic contacts decreases and the concentration of the main charge carriers increases in the sample in proportion to radiation intensity. This research uncovered a number of previously unknown effects that are interesting from the physical point of view. This paper focuses on discussing these effects.

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

PubMed

Pickett, Matthew D; Williams, R Stanley

2012-06-01

We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance). The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ. We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale. These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits.

Pho dynamically interacts with Spt5 to facilitate transcriptional switches at the hsp70 locus.

PubMed

Pereira, Allwyn; Paro, Renato

2017-12-06

Numerous target genes of the Polycomb group (PcG) are transiently activated by a stimulus and subsequently repressed. However, mechanisms by which PcG proteins regulate such target genes remain elusive. We employed the heat shock-responsive hsp70 locus in Drosophila to study the chromatin dynamics of PRC1 and its interplay with known regulators of the locus before, during and after heat shock. We detected mutually exclusive binding patterns for HSF and PRC1 at the hsp70 locus. We found that Pleiohomeotic (Pho), a DNA-binding PcG member, dynamically interacts with Spt5, an elongation factor. The dynamic interaction switch between Pho and Spt5 is triggered by the recruitment of HSF to chromatin. Mutation in the protein-protein interaction domain (REPO domain) of Pho interferes with the dynamics of its interaction with Spt5. The transcriptional kinetics of the heat shock response is negatively affected by a mutation in the REPO domain of Pho. We propose that a dynamic interaction switch between PcG proteins and an elongation factor enables stress-inducible genes to efficiently switch between ON/OFF states in the presence/absence of the activating stimulus.

Method and apparatus for creating time-optimal commands for linear systems

NASA Technical Reports Server (NTRS)

Seering, Warren P. (Inventor); Tuttle, Timothy D. (Inventor)

2004-01-01

A system for and method of determining an input command profile for substantially any dynamic system that can be modeled as a linear system, the input command profile for transitioning an output of the dynamic system from one state to another state. The present invention involves identifying characteristics of the dynamic system, selecting a command profile which defines an input to the dynamic system based on the identified characteristics, wherein the command profile comprises one or more pulses which rise and fall at switch times, imposing a plurality of constraints on the dynamic system, at least one of the constraints being defined in terms of the switch times, and determining the switch times for the input to the dynamic system based on the command profile and the plurality of constraints. The characteristics may be related to poles and zeros of the dynamic system, and the plurality of constraints may include a dynamics cancellation constraint which specifies that the input moves the dynamic system from a first state to a second state such that the dynamic system remains substantially at the second state.

Study on dynamic performance of SOFC

NASA Astrophysics Data System (ADS)

Zhan, Haiyang; Liang, Qianchao; Wen, Qiang; Zhu, Runkai

2017-05-01

In order to solve the problem of real-time matching of load and fuel cell power, it is urgent to study the dynamic response process of SOFC in the case of load mutation. The mathematical model of SOFC is constructed, and its performance is simulated. The model consider the influence factors such as polarization effect, ohmic loss. It also takes the diffusion effect, thermal effect, energy exchange, mass conservation, momentum conservation. One dimensional dynamic mathematical model of SOFC is constructed by using distributed lumped parameter method. The simulation results show that the I-V characteristic curves are in good agreement with the experimental data, and the accuracy of the model is verified. The voltage response curve, power response curve and the efficiency curve are obtained by this way. It lays a solid foundation for the research of dynamic performance and optimal control in power generation system of high power fuel cell stack.

Noise-induced polarization switching in complex networks

NASA Astrophysics Data System (ADS)

Haerter, Jan O.; Díaz-Guilera, Albert; Serrano, M. Ángeles

2017-04-01

The combination of bistability and noise is ubiquitous in complex systems, from biology to social interactions, and has important implications for their functioning and resilience. Here we use a simple three-state dynamical process, in which nodes go from one pole to another through an intermediate state, to show that noise can induce polarization switching in bistable systems if dynamical correlations are significant. In large, fully connected networks, where dynamical correlations can be neglected, increasing noise yields a collapse of bistability to an unpolarized configuration where the three possible states of the nodes are equally likely. In contrast, increased noise induces abrupt and irreversible polarization switching in sparsely connected networks. In multiplexes, where each layer can have a different polarization tendency, one layer is dominant and progressively imposes its polarization state on the other, offsetting or promoting the ability of noise to switch its polarization. Overall, we show that the interplay of noise and dynamical correlations can yield discontinuous transitions between extremes, which cannot be explained by a simple mean-field description.

Distinguishing the rates of gene activation from phenotypic variations.

PubMed

Chen, Ye; Lv, Cheng; Li, Fangting; Li, Tiejun

2015-06-18

Stochastic genetic switching driven by intrinsic noise is an important process in gene expression. When the rates of gene activation/inactivation are relatively slow, fast, or medium compared with the synthesis/degradation rates of mRNAs and proteins, the variability of protein and mRNA levels may exhibit very different dynamical patterns. It is desirable to provide a systematic approach to identify their key dynamical features in different regimes, aiming at distinguishing which regime a considered gene regulatory network is in from their phenotypic variations. We studied a gene expression model with positive feedbacks when genetic switching rates vary over a wide range. With the goal of providing a method to distinguish the regime of the switching rates, we first focus on understanding the essential dynamics of gene expression system in different cases. In the regime of slow switching rates, we found that the effective dynamics can be reduced to independent evolutions on two separate layers corresponding to gene activation and inactivation states, and the transitions between two layers are rare events, after which the system goes mainly along deterministic ODE trajectories on a particular layer to reach new steady states. The energy landscape in this regime can be well approximated by using Gaussian mixture model. In the regime of intermediate switching rates, we analyzed the mean switching time to investigate the stability of the system in different parameter ranges. We also discussed the case of fast switching rates from the viewpoint of transition state theory. Based on the obtained results, we made a proposal to distinguish these three regimes in a simulation experiment. We identified the intermediate regime from the fact that the strength of cellular memory is lower than the other two cases, and the fast and slow regimes can be distinguished by their different perturbation-response behavior with respect to the switching rates perturbations. We proposed a simulation experiment to distinguish the slow, intermediate and fast regimes, which is the main point of our paper. In order to achieve this goal, we systematically studied the essential dynamics of gene expression system when the switching rates are in different regimes. Our theoretical understanding provides new insights on the gene expression experiments.

Remarks on the thermal stability of an Ohmic-heated nanowire

NASA Astrophysics Data System (ADS)

Timsit, Roland S.

2018-05-01

The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

Modelling the dynamics of two political parties in the presence of switching.

PubMed

Nyabadza, F; Alassey, Tobge Yawo; Muchatibaya, Gift

2016-01-01

This paper generalizes the model proposed by Misra, by considering switching between political parties. In the model proposed, the movements of members from political party B to political party C and vice versa, are considered but the net movement is considered by assuming that [Formula: see text] (a constant), which implies that the movement of members is either from party B to party C or from party C to party B. In this paper we remodel these movements through switching functions to capture how individuals switch between parties. The results provide a more comprehensive synopsis of the dynamics between two political parties.

Global dynamics for switching systems and their extensions by linear differential equations

NASA Astrophysics Data System (ADS)

Huttinga, Zane; Cummins, Bree; Gedeon, Tomáš; Mischaikow, Konstantin

2018-03-01

Switching systems use piecewise constant nonlinearities to model gene regulatory networks. This choice provides advantages in the analysis of behavior and allows the global description of dynamics in terms of Morse graphs associated to nodes of a parameter graph. The parameter graph captures spatial characteristics of a decomposition of parameter space into domains with identical Morse graphs. However, there are many cellular processes that do not exhibit threshold-like behavior and thus are not well described by a switching system. We consider a class of extensions of switching systems formed by a mixture of switching interactions and chains of variables governed by linear differential equations. We show that the parameter graphs associated to the switching system and any of its extensions are identical. For each parameter graph node, there is an order-preserving map from the Morse graph of the switching system to the Morse graph of any of its extensions. We provide counterexamples that show why possible stronger relationships between the Morse graphs are not valid.

Global dynamics for switching systems and their extensions by linear differential equations.

PubMed

Huttinga, Zane; Cummins, Bree; Gedeon, Tomáš; Mischaikow, Konstantin

2018-03-15

Switching systems use piecewise constant nonlinearities to model gene regulatory networks. This choice provides advantages in the analysis of behavior and allows the global description of dynamics in terms of Morse graphs associated to nodes of a parameter graph. The parameter graph captures spatial characteristics of a decomposition of parameter space into domains with identical Morse graphs. However, there are many cellular processes that do not exhibit threshold-like behavior and thus are not well described by a switching system. We consider a class of extensions of switching systems formed by a mixture of switching interactions and chains of variables governed by linear differential equations. We show that the parameter graphs associated to the switching system and any of its extensions are identical. For each parameter graph node, there is an order-preserving map from the Morse graph of the switching system to the Morse graph of any of its extensions. We provide counterexamples that show why possible stronger relationships between the Morse graphs are not valid.

Impact of helical boundary conditions in MHD modeling of RFP and tokamak plasmas

NASA Astrophysics Data System (ADS)

Bonfiglio, D.; Cappello, S.; Escande, D. F.; Piovesan, P.; Veranda, M.; Chacón, L.

2012-10-01

Helical boundary conditions imposed by the active control system of the RFX-mod device provide a handle to govern the plasma dynamics in both RFP and Ohmic tokamak discharges [1]. By applying an edge radial magnetic field with proper helicity, it is possible to increase the persistence of the spontaneous helical RFP states at high current,and to stimulate them also at low current or high density. Helical BCs even allow to access helical states with different helicity than the spontaneous one [2]. In Ohmic tokamak operation at q(a)<2, the presence of the 2/1 RWM reduces the sawtoothing activity of the 1/1 internal kink, which takes a stationary snake-like character instead. Many of these features are qualitatively reproduced in 3D nonlinear MHD modeling. We study the impact of helical BCs on the MHD dynamics in both RFP and tokamak with two successfully benchmarked numerical tools, SpeCyl and PIXIE3D [3]. We recover the bifurcation from a sawtooth to a snake solution when imposing a 2/1 BC in the tokamak case and we interpret this as a toroidal/nonlinear coupling effect. We show that the bifurcation is more easily stimulated with a 1/1 BC.[4pt] [1] P. Piovesan, invited talk this meeting[0pt] [2] M. Veranda et al EPS-ICPP Conference (2012) P4.004[0pt] [3] D. Bonfiglio et al Phys. Plasmas (2010)

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, ChangLi; Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237; Wang, XueJun

2016-05-15

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designedmore » using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.« less

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Zhu, Huichao; Ao, Jin-Ping

2016-03-01

An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10-9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs.

Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

PubMed

Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

2016-04-01

The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

PubMed

Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

2010-10-01

Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (p<0.05) lighter surface-colours (63.05 (LTLT) and 62.26 (HTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (p<0.05) lower for LTLT samples (29.3%) compared to the other meats (36.3 and 33.8%). Sensory studies largely confirmed these observations. Cook values were lower for LTLT (3.05) while HTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Fundamental limits to frequency estimation: a comprehensive microscopic perspective

NASA Astrophysics Data System (ADS)

Haase, J. F.; Smirne, A.; Kołodyński, J.; Demkowicz-Dobrzański, R.; Huelga, S. F.

2018-05-01

We consider a metrology scenario in which qubit-like probes are used to sense an external field that affects their energy splitting in a linear fashion. Following the frequency estimation approach in which one optimizes the state and sensing time of the probes to maximize the sensitivity, we provide a systematic study of the attainable precision under the impact of noise originating from independent bosonic baths. Specifically, we invoke an explicit microscopic derivation of the probe dynamics using the spin-boson model with weak coupling of arbitrary geometry. We clarify how the secular approximation leads to a phase-covariant (PC) dynamics, where the noise terms commute with the field Hamiltonian, while the inclusion of non-secular contributions breaks the PC. Moreover, unless one restricts to a particular (i.e., Ohmic) spectral density of the bath modes, the noise terms may contain relevant information about the frequency to be estimated. Thus, by considering general evolutions of a single probe, we study regimes in which these two effects have a non-negligible impact on the achievable precision. We then consider baths of Ohmic spectral density yet fully accounting for the lack of PC, in order to characterize the ultimate attainable scaling of precision when N probes are used in parallel. Crucially, we show that beyond the semigroup (Lindbladian) regime the Zeno limit imposing the 1/N 3/2 scaling of the mean squared error, recently derived assuming PC, generalises to any dynamics of the probes, unless the latter are coupled to the baths in the direction perfectly transversal to the frequency encoding—when a novel scaling of 1/N 7/4 arises. As our microscopic approach covers all classes of dissipative dynamics, from semigroup to non-Markovian ones (each of them potentially non-phase-covariant), it provides an exhaustive picture, in which all the different asymptotic scalings of precision naturally emerge.

Suboptimal Scheduling in Switched Systems With Continuous-Time Dynamics: A Least Squares Approach.

PubMed

Sardarmehni, Tohid; Heydari, Ali

2018-06-01

Two approximate solutions for optimal control of switched systems with autonomous subsystems and continuous-time dynamics are presented. The first solution formulates a policy iteration (PI) algorithm for the switched systems with recursive least squares. To reduce the computational burden imposed by the PI algorithm, a second solution, called single loop PI, is presented. Online and concurrent training algorithms are discussed for implementing each solution. At last, effectiveness of the presented algorithms is evaluated through numerical simulations.

Adaptive Fuzzy Control Design for Stochastic Nonlinear Switched Systems With Arbitrary Switchings and Unmodeled Dynamics.

PubMed

Li, Yongming; Sui, Shuai; Tong, Shaocheng

2017-02-01

This paper deals with the problem of adaptive fuzzy output feedback control for a class of stochastic nonlinear switched systems. The controlled system in this paper possesses unmeasured states, completely unknown nonlinear system functions, unmodeled dynamics, and arbitrary switchings. A state observer which does not depend on the switching signal is constructed to tackle the unmeasured states. Fuzzy logic systems are employed to identify the completely unknown nonlinear system functions. Based on the common Lyapunov stability theory and stochastic small-gain theorem, a new robust adaptive fuzzy backstepping stabilization control strategy is developed. The stability of the closed-loop system on input-state-practically stable in probability is proved. The simulation results are given to verify the efficiency of the proposed fuzzy adaptive control scheme.

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

NASA Astrophysics Data System (ADS)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2017-10-01

While good ohmic contact formation has been achieved on both p-GaN and n-AlGaN surfaces, the turn-on and operating voltages of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) remain very high. We find that this critical problem is mainly caused by the large difference between the annealing temperatures required for ohmic contact formation on the p-GaN and high Al-fraction n-AlGaN surfaces. We studied the effects of the high-temperature annealing treatments required for n-ohmic contact formation on the subsequent p-ohmic contact formation process in DUV-LEDs. The results show that post-annealing treatment at high temperature is necessary to form an ohmic contact on n-Al0.7Ga0.3N, but a treatment temperature of 900°C or more could cause severe degradation of the specific contact resistivity and the bulk resistivity of p-GaN. We conclude that 900°C is the optimum temperature to form an ohmic contact on n-Al0.7Ga0.3N in DUV-LEDs, where p-GaN and n-Al0.7Ga0.3N act as the p- and n-ohmic contact layers, respectively. We also found that the specific contact resistivity of p-GaN can be reduced by an additional low-temperature annealing treatment after the high-temperature annealing step; this effect can be attributed to the enhancement of the hole concentration in the p-GaN surface contact region. Finally, DUV-LEDs that emit at 280 nm were fabricated using four different annealing treatments during processing. A considerable reduction in the series resistance and thereby in the operating voltage was confirmed using the annealing process proposed above, consisting of a high-temperature anneal at 900°C followed by a low-temperature anneal at 500°C for 3 min.

Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films

PubMed Central

Hu, Wei Jin; Juo, Deng-Ming; You, Lu; Wang, Junling; Chen, Yi-Chun; Chu, Ying-Hao; Wu, Tom

2014-01-01

In this work, switching dynamics of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 MV/m and 180° domain wall energy of 60 mJ/m2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications. PMID:24759786

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

NASA Astrophysics Data System (ADS)

Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-02-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

PubMed

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Ohmic Inflation of Hot Jupiters: an Analytical Approach

NASA Astrophysics Data System (ADS)

Ginzburg, Sivan; Sari, Re'em

2015-12-01

Many giant exoplanets in close orbits have observed radii which exceed theoretical predictions.One suggested explanation for this discrepancy is heat deposited deep inside the atmospheres of these hot Jupiters.We present an analytical model for the evolution of such irradiated, and internally heated gas giants, and derive scaling laws for their cooling rates and radii.We estimate the Ohmic dissipation resulting from the interaction between the atmospheric winds and the planet's magnetic field, and apply our model to Ohmically heated planets.Our model can account for the observed radii of many inflated planets, but not the most extreme ones.We show that Ohmically heated planets have already reached their equilibrium phase and they no longer contract.We show that it is possible to re-inflate planets, but we confirm that re-heating timescales are longer by about a factor of 30 than cooling times.

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

NASA Astrophysics Data System (ADS)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Coherent Multimodal Sensory Information Allows Switching between Gravitoinertial Contexts

PubMed Central

Barbiero, Marie; Rousseau, Célia; Papaxanthis, Charalambos; White, Olivier

2017-01-01

Whether the central nervous system is capable to switch between contexts critically depends on experimental details. Motor control studies regularly adopt robotic devices to perturb the dynamics of a certain task. Other approaches investigate motor control by altering the gravitoinertial context itself as in parabolic flights and human centrifuges. In contrast to conventional robotic experiments, where only the hand is perturbed, these gravitoinertial or immersive settings coherently plunge participants into new environments. However, radically different they are, perfect adaptation of motor responses are commonly reported. In object manipulation tasks, this translates into a good matching of the grasping force or grip force to the destabilizing load force. One possible bias in these protocols is the predictability of the forthcoming dynamics. Here we test whether the successful switching and adaptation processes observed in immersive environments are a consequence of the fact that participants can predict the perturbation schedule. We used a short arm human centrifuge to decouple the effects of space and time on the dynamics of an object manipulation task by adding an unnatural explicit position-dependent force. We created different dynamical contexts by asking 20 participants to move the object at three different paces. These contextual sessions were interleaved such that we could simulate concurrent learning. We assessed adaptation by measuring how grip force was adjusted to this unnatural load force. We found that the motor system can switch between new unusual dynamical contexts, as reported by surprisingly well-adjusted grip forces, and that this capacity is not a mere consequence of the ability to predict the time course of the upcoming dynamics. We posit that a coherent flow of multimodal sensory information born in a homogeneous milieu allows switching between dynamical contexts. PMID:28553233

Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

NASA Astrophysics Data System (ADS)

Scott, J. F.; Hershkovitz, A.; Ivry, Y.; Lu, H.; Gruverman, A.; Gregg, J. M.

2017-12-01

Recent experimental work shows that ferroelectric switching can occur in large jumps in which ferroelastic superdomains switch together, rather than having the numerous smaller ferroelectric domains switch within them. In this sense, the superdomains play a role analogous to that of Abrikosov vortices in thin superconducting films under the Kosterlitz-Thouless framework, which control the dynamics more than individual Cooper pairs within them do. Here, we examine the dynamics of ferroelastic superdomains in ferroelastic ferroelectrics and their role in switching devices such as memories. Jamming of ferroelectric domains in thin films has revealed an unexpected time dependence of t-1/4 at long times (hours), but it is difficult to discriminate between power-law and exponential relaxation. Other aspects of this work, including spatial period doubling of domains, led to a description of ferroelastic domains as nonlinear processes in a viscoelastic medium, which produce folding and metastable kinetically limited states. This ¼ exponent is a surprising agreement with the well-known value of ¼ for coarsening dynamics in viscoelastic media. We try to establish a link between these two processes, hitherto considered unrelated, and with superdomains and domain bundles. We note also that high-Tc superconductors share many of the ferroelastic domain properties discussed here and that several new solar cell materials and metal-insulator transition systems are ferroelastic.

Piecewise affine models of chaotic attractors: the Rossler and Lorenz systems.

PubMed

Amaral, Gleison F V; Letellier, Christophe; Aguirre, Luis Antonio

2006-03-01

This paper proposes a procedure by which it is possible to synthesize Rossler [Phys. Lett. A 57, 397-398 (1976)] and Lorenz [J. Atmos. Sci. 20, 130-141 (1963)] dynamics by means of only two affine linear systems and an abrupt switching law. Comparison of different (valid) switching laws suggests that parameters of such a law behave as codimension one bifurcation parameters that can be changed to produce various dynamical regimes equivalent to those observed with the original systems. Topological analysis is used to characterize the resulting attractors and to compare them with the original attractors. The paper provides guidelines that are helpful to synthesize other chaotic dynamics by means of switching affine linear systems.

Dynamics of an HBV/HCV infection model with intracellular delay and cell proliferation

NASA Astrophysics Data System (ADS)

Zhang, Fengqin; Li, Jianquan; Zheng, Chongwu; Wang, Lin

2017-01-01

A new mathematical model of hepatitis B/C virus (HBV/HCV) infection which incorporates the proliferation of healthy hepatocyte cells and the latent period of infected hepatocyte cells is proposed and studied. The dynamics is analyzed via Pontryagin's method and a newly proposed alternative geometric stability switch criterion. Sharp conditions ensuring stability of the infection persistent equilibrium are derived by applying Pontryagin's method. Using the intracellular delay as the bifurcation parameter and applying an alternative geometric stability switch criterion, we show that the HBV/HCV infection model undergoes stability switches. Furthermore, numerical simulations illustrate that the intracellular delay can induce complex dynamics such as persistence bubbles and chaos.

Simulation of the Plasma Density Evolution during Electron Cyclotron Resonance Heating at the T-10 Tokamak

NASA Astrophysics Data System (ADS)

Dnestrovskij, Yu. N.; Vershkov, V. A.; Danilov, A. V.; Dnestrovskij, A. Yu.; Zenin, V. N.; Lysenko, S. E.; Melnikov, A. V.; Shelukhin, D. A.; Subbotin, G. F.; Cherkasov, S. V.

2018-01-01

In ohmically heated (OH) plasma with low recycling, an improved particle confinement (IPC) mode is established during gas puffing. However, after gas puffing is switched off, this mode is retained only for about 100 ms, after which an abrupt phase transition into the low particle confinement (LPC) mode occurs in the entire plasma cross section. During such a transition, energy transport due to heat conduction does not change. The phase transition in OH plasma is similar to the effect of density pump-out from the plasma core, which occurs after electron cyclotron heating (ECH) is switched on. Analysis of the measured plasma pressure profiles in the T-10 tokamak shows that, after gas puffing in the OH mode is switched off, the plasma pressure profile in the IPC stage becomes more peaked and, after the peakedness exceeds a certain critical value, the IPC-LPC transition occurs. Similar processes are also observed during ECH. If the pressure profile is insufficiently peaked during ECH, then the density pump-out effect comes into play only after the critical peakedness of the pressure profile is reached. In the plasma core, the density and pressure profiles are close to the corresponding canonical profiles. This allows one to derive an expression for the particle flux within the canonical profile model and formulate a criterion for the IPC-LPC transition. The time evolution of the plasma density profile during phase transitions was simulated for a number of T-10 shots with ECH and high recycling. The particle transport coefficients in the IPC and LPC phases, as well as the dependences of these coefficients on the ECH power, are determined.

Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

2016-09-01

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

Flexible carbon-based ohmic contacts for organic transistors

NASA Technical Reports Server (NTRS)

Brandon, Erik (Inventor)

2007-01-01

The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

Noise-driven switching and chaotic itinerancy among dynamic states in a three-mode intracavity second-harmonic generation laser operating on a Λ transition

NASA Astrophysics Data System (ADS)

Otsuka, Kenju; Ohtomo, Takayuki; Maniwa, Tsuyoshi; Kawasaki, Hazumi; Ko, Jing-Yuan

2003-09-01

We studied the antiphase self-pulsation in a globally coupled three-mode laser operating in different optical spectrum configurations. We observed locking of modal pulsation frequencies, quasiperiodicity, clustering behaviors, and chaos, resulting from the nonlinear interaction among modes. The robustness of [p:q:r] three-frequency locking states and quasiperiodic oscillations against residual noise has been examined by using joint time-frequency analysis of long-term experimental time series. Two sharply antithetical types of switching behaviors among different dynamic states were observed during temporal evolutions; noise-driven switching and self-induced switching, which manifests itself in chaotic itinerancy. The modal interplay behind observed behaviors was studied by using the statistical dynamic quantity of the information circulation. Well-organized information flows among modes, which correspond to the number of degeneracies of modal pulsation frequencies, were found to be established in accordance with the inherent antiphase dynamics. Observed locking behaviors, quasiperiodic motions, and chaotic itinerancy were reproduced by numerical simulation of the model equations.

Mathematical modeling of atopic dermatitis reveals "double-switch" mechanisms underlying 4 common disease phenotypes.

PubMed

Domínguez-Hüttinger, Elisa; Christodoulides, Panayiotis; Miyauchi, Kosuke; Irvine, Alan D; Okada-Hatakeyama, Mariko; Kubo, Masato; Tanaka, Reiko J

2017-06-01

The skin barrier acts as the first line of defense against constant exposure to biological, microbial, physical, and chemical environmental stressors. Dynamic interplay between defects in the skin barrier, dysfunctional immune responses, and environmental stressors are major factors in the development of atopic dermatitis (AD). A systems biology modeling approach can yield significant insights into these complex and dynamic processes through integration of prior biological data. We sought to develop a multiscale mathematical model of AD pathogenesis that describes the dynamic interplay between the skin barrier, environmental stress, and immune dysregulation and use it to achieve a coherent mechanistic understanding of the onset, progression, and prevention of AD. We mathematically investigated synergistic effects of known genetic and environmental risk factors on the dynamic onset and progression of the AD phenotype, from a mostly asymptomatic mild phenotype to a severe treatment-resistant form. Our model analysis identified a "double switch," with 2 concatenated bistable switches, as a key network motif that dictates AD pathogenesis: the first switch is responsible for the reversible onset of inflammation, and the second switch is triggered by long-lasting or frequent activation of the first switch, causing irreversible onset of systemic T H 2 sensitization and worsening of AD symptoms. Our mathematical analysis of the bistable switch predicts that genetic risk factors decrease the threshold of environmental stressors to trigger systemic T H 2 sensitization. This analysis predicts and explains 4 common clinical AD phenotypes from a mild and reversible phenotype through to severe and recalcitrant disease and provides a mechanistic explanation for clinically demonstrated preventive effects of emollient treatments against development of AD. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

Hierarchy of forward-backward stochastic Schrödinger equation

NASA Astrophysics Data System (ADS)

Ke, Yaling; Zhao, Yi

2016-07-01

Driven by the impetus to simulate quantum dynamics in photosynthetic complexes or even larger molecular aggregates, we have established a hierarchy of forward-backward stochastic Schrödinger equation in the light of stochastic unravelling of the symmetric part of the influence functional in the path-integral formalism of reduced density operator. The method is numerically exact and is suited for Debye-Drude spectral density, Ohmic spectral density with an algebraic or exponential cutoff, as well as discrete vibrational modes. The power of this method is verified by performing the calculations of time-dependent population differences in the valuable spin-boson model from zero to high temperatures. By simulating excitation energy transfer dynamics of the realistic full FMO trimer, some important features are revealed.

Hot electrons injection in carbon nanotubes under the influence of quasi-static ac-field

NASA Astrophysics Data System (ADS)

Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

2016-07-01

The theory of hot electrons injection in carbon nanotubes (CNTs) where both dc electric field (Ez), and a quasi-static ac field exist simultaneously (i.e. when the frequency ω of ac field is much less than the scattering frequency v (ω ⪡ v or ωτ ⪡ 1, v =τ-1) where τ is relaxation time) is studied. The investigation is done theoretically by solving semi-classical Boltzmann transport equation with and without the presence of the hot electrons source to derive the current densities. Plots of the normalized current density versus dc field (Ez) applied along the axis of the CNTs in the presence and absence of hot electrons reveal ohmic conductivity initially and finally negative differential conductivity (NDC) provided ωτ ⪡ 1 (i.e. quasi- static case). With strong enough axial injection of the hot electrons, there is a switch from NDC to positive differential conductivity (PDC) about Ez ≥ 75 kV / cm and Ez ≥ 140 kV / cm for a zigzag CNT and an armchair CNT respectively. Thus, the most important tough problem for NDC region which is the space charge instabilities can be suppressed due to the switch from the NDC behaviour to the PDC behaviour predicting a potential generation of terahertz radiations whose applications are relevance in current-day technology, industry, and research.

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

NASA Astrophysics Data System (ADS)

Zhou, Tian-Yu; Liu, Xue-Chao; Huang, Wei; Dai, Chong-Chong; Zheng, Yan-Qing; Shi, Er-Wei

2015-04-01

Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the on-state resistance of lateral PCSS with an n+-AZO subcontact layer is 14.7% lower than that of PCSS without an n+-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials. Project supported by the Innovation Program of the Shanghai Institute of Ceramics (Grant No. Y39ZC1110G), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), the Natural Science Foundation of Shanghai (Grant No. 14ZR1419000), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61404146), and the National High-tech R & D Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Switching Dynamics and the Stress Process

PubMed Central

Cornwell, Benjamin

2014-01-01

This paper shows how maintaining social relationships can be a daily hassle that has implications for the stress process, depending on how often individuals transition, or “switch,” between their various social roles and social settings throughout the day. I use nationally representative time diary data on 7,662 respondents from the 2010 American Time Use Survey to measure individual rates of this switching behavior and to examine how this relates to perceived stress. Regression analysis shows that, net of how many social roles they play and settings they visit on a given day, individuals who switch more frequently between these elements report higher levels of stress. This finding holds for women but not men, suggesting that switching dynamics are disproportionately stressful for women. I close by discussing the implications of the findings for research on gender and health. PMID:25110381

Nano- and micro-electromechanical switch dynamics

NASA Astrophysics Data System (ADS)

Pulskamp, Jeffrey S.; Proie, Robert M.; Polcawich, Ronald G.

2013-01-01

This paper reports theoretical analysis and experimental results on the dynamics of piezoelectric MEMS mechanical logic relays. The multiple degree of freedom analytical model, based on modal decomposition, utilizes modal parameters obtained from finite element analysis and an analytical model of piezoelectric actuation. The model accounts for exact device geometry, damping, drive waveform variables, and high electric field piezoelectric nonlinearity. The piezoelectrically excited modal force is calculated directly and provides insight into design optimization for switching speed. The model accurately predicts the propagation delay dependence on actuation voltage of mechanically distinct relay designs. The model explains the observed discrepancies in switching speed of these devices relative to single degree of freedom switching speed models and suggests the strong potential for improved switching speed performance in relays designed for mechanical logic and RF circuits through the exploitation of higher order vibrational modes.

Stability and Multiattractor Dynamics of a Toggle Switch Based on a Two-Stage Model of Stochastic Gene Expression

PubMed Central

Strasser, Michael; Theis, Fabian J.; Marr, Carsten

2012-01-01

A toggle switch consists of two genes that mutually repress each other. This regulatory motif is active during cell differentiation and is thought to act as a memory device, being able to choose and maintain cell fate decisions. Commonly, this switch has been modeled in a deterministic framework where transcription and translation are lumped together. In this description, bistability occurs for transcription factor cooperativity, whereas autoactivation leads to a tristable system with an additional undecided state. In this contribution, we study the stability and dynamics of a two-stage gene expression switch within a probabilistic framework inspired by the properties of the Pu/Gata toggle switch in myeloid progenitor cells. We focus on low mRNA numbers, high protein abundance, and monomeric transcription-factor binding. Contrary to the expectation from a deterministic description, this switch shows complex multiattractor dynamics without autoactivation and cooperativity. Most importantly, the four attractors of the system, which only emerge in a probabilistic two-stage description, can be identified with committed and primed states in cell differentiation. To begin, we study the dynamics of the system and infer the mechanisms that move the system between attractors using both the quasipotential and the probability flux of the system. Next, we show that the residence times of the system in one of the committed attractors are geometrically distributed. We derive an analytical expression for the parameter of the geometric distribution, therefore completely describing the statistics of the switching process and elucidate the influence of the system parameters on the residence time. Moreover, we find that the mean residence time increases linearly with the mean protein level. This scaling also holds for a one-stage scenario and for autoactivation. Finally, we study the implications of this distribution for the stability of a switch and discuss the influence of the stability on a specific cell differentiation mechanism. Our model explains lineage priming and proposes the need of either high protein numbers or long-term modifications such as chromatin remodeling to achieve stable cell fate decisions. Notably, we present a system with high protein abundance that nevertheless requires a probabilistic description to exhibit multistability, complex switching dynamics, and lineage priming. PMID:22225794

Manipulating Conduction in Metal Oxide Semiconductors: Mechanism Investigation and Conductance Tuning in Doped Fe2O3 Hematite and Metal/Ga2O3/Metal Heterostructure

NASA Astrophysics Data System (ADS)

Zhao, Bo

This study aims at understanding the fundamental mechanisms of conduction in several metal oxide semiconductors, namely alpha-Fe2O 3 and beta-Ga2O3, and how it could be tuned to desired values/states to enable a wide range of application. In the first effort, by adding Ti dopant, we successfully turned Fe2O3 from insulating to conductive by fabricated compositionally and structurally well-defined epitaxial alpha-(TixFe1-x)2 O3(0001) films for x ≤ 0.09. All films were grown by oxygen plasma assisted molecular beam epitaxy on Al2O3(0001) sapphire substrate with a buffer layer of Cr2O3 to relax the strain from lattice mismatch. Van der Pauw resistivity and Hall effect measurements reveal carrier concentrations between 1019 and 1020 cm-3 at room temperature and mobilities in the range of 0.1 to 0.6 cm2/V˙s. Such low mobility, unlike conventional band-conduction semiconductor, was attributed to hopping mechanism due to strong electron-phonon interaction in the lattice. More interestingly, conduction mechanism transitions from small-polaron hopping at higher temperatures to variable range hopping at lower temperatures with a transition temperature between 180 to 140 K. Consequently, by adding Ti dopant, conductive Fe 2O3 hematite thin films were achieved with a well-understood conducting mechanism that could guide further device application such as spin transistor and water splitting. In the case of Ga2O3, while having a band gap as high as 5 eV, they are usually conductive for commercially available samples due to unintentional Si doping. However, we discovered the conductance could be repeatedly switched between high resistance state and low resistance state when made into metal/Ga2O3 /metal heterostructure. However, to obtain well controlled switching process with consistent switching voltages and resistances, understanding switching mechanism is the key. In this study, we fabricated resistive switching devices utilizing a Ni/Ga2O3/Ir heterostructure. Bipolar switching, non-volatility, and repeatable switching are tested for the devices fabricated. Following previous discoveries on Ni/Ga2O3 single crystal which shows interface barrier type change (Schottky ↔ Ohmic) upon annealing accompanied by defects migration, characterization of the interface behavior on resistive switching cell Ni/Ga2O 3(thin film)/Ir under two different resistive states was performed using X-ray photoemission spectroscopy (XPS). Most interestingly, feathers in XPS spectrum of Ga allow for a unique nondestructive approach to investigate interface by XPS through electron transparent top contact. Theoretical modeling shows that Ga migrate towards the interface upon switching to low resistive state, indicating a possible mechanism that involves interfacial switch through barrier height modifying. Such device holds potential to become the next generation of non-volatile memory device, resistive RAM.

A Superconducting Dual-Channel Photonic Switch.

PubMed

Srivastava, Yogesh Kumar; Manjappa, Manukumara; Cong, Longqing; Krishnamoorthy, Harish N S; Savinov, Vassili; Pitchappa, Prakash; Singh, Ranjan

2018-06-05

The mechanism of Cooper pair formation and its underlying physics has long occupied the investigation into high temperature (high-T c ) cuprate superconductors. One of the ways to unravel this is to observe the ultrafast response present in the charge carrier dynamics of a photoexcited specimen. This results in an interesting approach to exploit the dissipation-less dynamic features of superconductors to be utilized for designing high-performance active subwavelength photonic devices with extremely low-loss operation. Here, dual-channel, ultrafast, all-optical switching and modulation between the resistive and the superconducting quantum mechanical phase is experimentally demonstrated. The ultrafast phase switching is demonstrated via modulation of sharp Fano resonance of a high-T c yttrium barium copper oxide (YBCO) superconducting metamaterial device. Upon photoexcitation by femtosecond light pulses, the ultrasensitive cuprate superconductor undergoes dual dissociation-relaxation dynamics, with restoration of superconductivity within a cycle, and thereby establishes the existence of dual switching windows within a timescale of 80 ps. Pathways are explored to engineer the secondary dissociation channel which provides unprecedented control over the switching speed. Most importantly, the results envision new ways to accomplish low-loss, ultrafast, and ultrasensitive dual-channel switching applications that are inaccessible through conventional metallic and dielectric based metamaterials. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Super Nonlinear Electrodeposition-Diffusion-Controlled Thin-Film Selector.

PubMed

Ji, Xinglong; Song, Li; He, Wei; Huang, Kejie; Yan, Zhiyuan; Zhong, Shuai; Zhang, Yishu; Zhao, Rong

2018-03-28

Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge 2 Sb 2 Te 5 ) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

NASA Astrophysics Data System (ADS)

Barangi, Mahmood; Erementchouk, Mikhail; Mazumder, Pinaki

2016-08-01

Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the efficiency of the straintronics switching over the STT method is highlighted by analytically investigating the energy-delay trade-off of both methodologies.

Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barangi, Mahmood, E-mail: barangi@umich.edu; Erementchouk, Mikhail; Mazumder, Pinaki

Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flippingmore » delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the efficiency of the straintronics switching over the STT method is highlighted by analytically investigating the energy-delay trade-off of both methodologies.« less

Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers

NASA Astrophysics Data System (ADS)

Gu, Wen; Xu, Tao; Zhang, Jianhua

2013-11-01

Copper sulfide (CuS) was used as the intermediate layer to build ohmic contact of Ga-Doped ZnO (GZO) transparent conduction layer (TCL) to p-GaN. The CuS and GZO layers were prepared by thermal evaporation and RF magnetron sputtering, respectively. Although the GZO-only contacts to p-GaN exhibit nonlinear behavior, ohmic contact with a specific contact resistance of 1.6 × 10-2 Ω cm2 has been realized by inserting 3 nm CuS layer between GZO and p-GaN. The optical transmittance of CuS/GZO film was measured to be higher than 80% in the range of 450-600 nm wavelength. The possible mechanism for the ohmic contact behavior can be attributed to the increased hole concentration of p-GaN surface induced by CuS films after annealing. The forward voltage of LEDs with CuS/GZO TCL has been reduced by 1.7 V at 20 mA and the output power has been increased by 29.6% at 100 mA compared with LEDs without CuS interlayer. These results indicated that using CuS intermediate layer could be a potential ohmic contact method to realize high-efficiency LEDs.

Ohmic heating pretreatment of algal slurry for production of biodiesel.

PubMed

Yodsuwan, Natthawut; Kamonpatana, Pitiya; Chisti, Yusuf; Sirisansaneeyakul, Sarote

2018-02-10

Suspensions of the model microalga Chlorella sp. TISTR 8990 were pretreated by ohmic heating to facilitate release of lipids from the cells in subsequent extraction and lipase-mediated transesterification to biodiesel. After ohmic pretreatment, the moist biomass was suspended in a system of water, hexane, methanol and immobilized lipase for extraction of lipids and simultaneous conversion to biodiesel. The ohmic pretreatment was optimized using an experimental design based on Taguchi method to provide treated biomass that maximized the biodiesel yield in subsequent extraction-transesterification operation. The experimental factors were the frequency of electric current (5-10 5  Hz), the processing temperature (50-70 °C), the algal biomass concentration in the slurry (algal fresh weight to water mass ratio of 1-3) and the incubation time (1-3 min). Extraction-transesterification of the pretreated biomass was carried out at 40 °C for 24 h using a reaction systems of a fixed composition (i.e. biomass, hexane, methanol, water and immobilized enzyme). Compared to control (i.e. untreated biomass), the ohmic pretreatment under optimal conditions (5 Hz current frequency, 70 °C, 1:2 mass ratio of biomass to water, incubation time of 2-min) increased the rate of subsequent transesterification by nearly 2-fold. Copyright © 2017 Elsevier B.V. All rights reserved.

Mobility-Resolved Ion Selection in Uniform Drift Field Ion Mobility Spectrometry/Mass Spectrometry: Dynamic Switching in Structures for Lossless Ion Manipulations

DOE PAGES

Webb, Ian K.; Garimella, Sandilya V. B.; Tolmachev, Aleksey V.; ...

2014-09-15

A Structures for Lossless Ion Manipulations (SLIM) module that allows ion mobility separations and the switching of ions between alternative drift paths is described. The SLIM switch component has a “Tee” configuration and allows switching of ions between a linear path and a 90-degree bend. By controlling switching times, ions can be deflected to an alternative channel as a function of their mobilities. In the initial evaluation the switch is used in a static mode and shown compatible with high performance ion mobility separations at 4 torr. In the “dynamic mode” we show that mobility-selected ions can be switched intomore » the alternative channel, and that various ion species can be independently selected based on their mobilities for time-of-flight mass spectrometer (TOF MS) IMS detection and mass analysis. Ultimately, this development also provides the basis for e.g. the selection of specific mobilities for storage and accumulation, and key modules for the assembly of SLIM devices enabling much more complex sequences of ion manipulations.« less

Magnetic switching in granular FePt layers promoted by near-field laser enhancement

DOE PAGES

Granitzka, Patrick W.; Jal, Emmanuelle; Le Guyader, Loic; ...

2017-03-08

Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming the material constraints of high-anisotropy and high-packing density media, though much about the dynamics of the switching process remains unexplored. We use ultrafast small-angle X-ray scattering at an X-ray free-electron laser to probe the magnetic switching dynamics of FePt nanoparticles embedded in a carbon matrix following excitation by an optical femtosecond laser pulse. We observe that the combination of laser excitation and applied static magnetic field, 1 order ofmore » magnitude smaller than the coercive field, can overcome the magnetic anisotropy barrier between “up” and “down” magnetization, enabling magnetization switching. This magnetic switching is found to be inhomogeneous throughout the material with some individual FePt nanoparticles neither switching nor demagnetizing. The origin of this behavior is identified as the near-field modification of the incident laser radiation around FePt nanoparticles. Furthermore, the fraction of not-switching nanoparticles is influenced by the heat flow between FePt and a heat-sink layer.« less

Method of obtaining graphene and graphene-based electronic components and circuits with pencil directly on paper

NASA Astrophysics Data System (ADS)

Mailian, Aram; Mailian, Manvel; Shmavonyan, Gagik

2014-03-01

An easy method of obtaining graphene and graphene-based electronic components and circuits by drawing lines or repeatedly rubbing any type of graphite rod along the same path directly on paper and other insulating substrates is suggested. The structure containing rubbed-off layers behaves like a semiconducting material. The surface of the structure demonstrates ordered and oriented character containing few layer graphene. The carrier mobility is anisotropic through the thickness of the structure with the highest value of ~ 104 cm2/V .sec at the surface. Raman spectra of the structures in the near IR at excitation wavelength of 976 nm (1.27 eV) are registered. The observed phenomenon is universal, does not depend on the material of the substrate and could find a widespread application. For example, the junction between two rubbed off layers with different mobilities exhibits a non-Ohmic behavior. I-V characteristic of the junction is symmetrically curved with respect to 0 V. The greater is the difference between the carrier mobility, the higher is the curvature. The dynamic accumulation of the carriers in both sides of the junction creates a barrier responsible for non-Ohmic behavior.

Loads Bias Genetic and Signaling Switches in Synthetic and Natural Systems

PubMed Central

Medford, June; Prasad, Ashok

2014-01-01

Biological protein interactions networks such as signal transduction or gene transcription networks are often treated as modular, allowing motifs to be analyzed in isolation from the rest of the network. Modularity is also a key assumption in synthetic biology, where it is similarly expected that when network motifs are combined together, they do not lose their essential characteristics. However, the interactions that a network module has with downstream elements change the dynamical equations describing the upstream module and thus may change the dynamic and static properties of the upstream circuit even without explicit feedback. In this work we analyze the behavior of a ubiquitous motif in gene transcription and signal transduction circuits: the switch. We show that adding an additional downstream component to the simple genetic toggle switch changes its dynamical properties by changing the underlying potential energy landscape, and skewing it in favor of the unloaded side, and in some situations adding loads to the genetic switch can also abrogate bistable behavior. We find that an additional positive feedback motif found in naturally occurring toggle switches could tune the potential energy landscape in a desirable manner. We also analyze autocatalytic signal transduction switches and show that a ubiquitous positive feedback switch can lose its switch-like properties when connected to a downstream load. Our analysis underscores the necessity of incorporating the effects of downstream components when understanding the physics of biochemical network motifs, and raises the question as to how these effects are managed in real biological systems. This analysis is particularly important when scaling synthetic networks to more complex organisms. PMID:24676102

Reactive molecular dynamics simulations of switching processes of azobenzene-based monolayer on surface

NASA Astrophysics Data System (ADS)

Tian, Ziqi; Wen, Jin; Ma, Jing

2013-07-01

It is a challenge to simulate the switching process of functional self-assembled monolayers (SAMs) on metal surfaces, since the systems consist of thousands of atoms and the switching is triggered by quantum-mechanical events. Herein a molecular dynamics simulation with a reactive rotation potential of N=N bond is implemented to investigate the dynamic conformational changes and packing effects on the stimuli-responsive isomerization of the terminally thiol functionalized azobiphenyls (AZOs), which are bound on the Au(111) surface. To, respectively, distinguish the time evolutions that start from cis and trans initial configurations, two different functions are established to model the potential energy curves for cis-to-trans and trans-to-cis transitions, instead of the only one cosine function used in the conventional non-reactive force fields. In order to simulate the conformation transitions of the AZO film on surface, a random switching function, depending on the N=N twisting angle, is constructed to consider both forward and backward cis/trans isomerization events and to trigger the reaction by changing the N atom types automatically. The factors that will influence the isomerization process, including the choice of ensembles and thermostat algorithms, the time intervals separating each switching, and the forms of the switching function, are systematically tested. Most AZO molecules switch from the cis to trans configuration with a coverage of 5.76 × 10-6 mol/m2 on a picosecond time scale, and a low coverage might make the switching irreversible, which is in agreement with the experiments.

A Low-G Silicon Inertial Micro-Switch with Enhanced Contact Effect Using Squeeze-Film Damping.

PubMed

Peng, Yingchun; Wen, Zhiyu; Li, Dongling; Shang, Zhengguo

2017-02-16

Contact time is one of the most important properties for inertial micro-switches. However, it is usually less than 20 μs for the switch with rigid electrode, which is difficult for the external circuit to recognize. This issue is traditionally addressed by designing the switch with a keep-close function or flexible electrode. However, the switch with keep-close function requires an additional operation to re-open itself, causing inconvenience for some applications wherein repeated monitoring is needed. The switch with a flexible electrode is usually fabricated by electroplating technology, and it is difficult to realize low-g switches (<50 g) due to inherent fabrication errors. This paper reports a contact enhancement using squeeze-film damping effect for low-g switches. A vertically driven switch with large proof mass and flexible springs was designed based on silicon micromachining, in order to achieve a damping ratio of 2 and a threshold value of 10 g. The proposed contact enhancement was investigated by theoretical and experimental studies. The results show that the damping effect can not only prolong the contact time for the dynamic acceleration load, but also reduce the contact bounce for the quasi-static acceleration load. The contact time under dynamic and quasi-static loads was 40 μs and 570 μs, respectively.

Atomic switch networks as complex adaptive systems

NASA Astrophysics Data System (ADS)

Scharnhorst, Kelsey S.; Carbajal, Juan P.; Aguilera, Renato C.; Sandouk, Eric J.; Aono, Masakazu; Stieg, Adam Z.; Gimzewski, James K.

2018-03-01

Complexity is an increasingly crucial aspect of societal, environmental and biological phenomena. Using a dense unorganized network of synthetic synapses it is shown that a complex adaptive system can be physically created on a microchip built especially for complex problems. These neuro-inspired atomic switch networks (ASNs) are a dynamic system with inherent and distributed memory, recurrent pathways, and up to a billion interacting elements. We demonstrate key parameters describing self-organized behavior such as non-linearity, power law dynamics, and multistate switching regimes. Device dynamics are then investigated using a feedback loop which provides control over current and voltage power-law behavior. Wide ranging prospective applications include understanding and eventually predicting future events that display complex emergent behavior in the critical regime.

Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, C., E-mail: csung@physics.ucla.edu; White, A. E.; Greenwald, M.

2016-04-15

Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local,more » electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].« less

Extended Heat Deposition in Hot Jupiters: Application to Ohmic Heating

NASA Astrophysics Data System (ADS)

Ginzburg, Sivan; Sari, Re'em

2016-03-01

The observed radii of many giant exoplanets in close orbits exceed theoretical predictions. One suggested origin for this discrepancy is heat deposited deep inside the atmospheres of these “hot Jupiters”. Here, we study extended power sources that distribute heat from the photosphere to the deep interior of the planet. Our analytical treatment is a generalization of a previous analysis of localized “point sources”. We model the deposition profile as a power law in the optical depth and find that planetary cooling and contraction halt when the internal luminosity (I.e., cooling rate) of the planet drops below the heat deposited in the planet’s convective region. A slowdown in the evolutionary cooling prior to equilibrium is possible only for sources that do not extend to the planet’s center. We estimate the ohmic dissipation resulting from the interaction between the atmospheric winds and the planet’s magnetic field, and apply our analytical model to ohmically heated planets. Our model can account for the observed radii of most inflated planets, which have equilibrium temperatures of ≈1500-2500 K and are inflated to a radius of ≈ 1.6{R}J. However, some extremely inflated planets remain unexplained by our model. We also argue that ohmically inflated planets have already reached their equilibrium phase, and no longer contract. Following Wu & Lithwick, who argued that ohmic heating could only suspend and not reverse contraction, we calculate the time it takes ohmic heating to re-inflate a cold planet to its equilibrium configuration. We find that while it is possible to re-inflate a cold planet, the re-inflation timescales are longer by a factor of ≈ 30 than the cooling time.

Detection and size analysis of proteins with switchable DNA layers.

PubMed

Rant, Ulrich; Pringsheim, Erika; Kaiser, Wolfgang; Arinaga, Kenji; Knezevic, Jelena; Tornow, Marc; Fujita, Shozo; Yokoyama, Naoki; Abstreiter, Gerhard

2009-04-01

We introduce a chip-compatible scheme for the label-free detection of proteins in real-time that is based on the electrically driven conformation switching of DNA oligonucleotides on metal surfaces. The switching behavior is a sensitive indicator for the specific recognition of IgG antibodies and antibody fragments, which can be detected in quantities of less than 10(-18) mol on the sensor surface. Moreover, we show how the dynamics of the induced molecular motion can be monitored by measuring the high-frequency switching response. When proteins bind to the layer, the increase in hydrodynamic drag slows the switching dynamics, which allows us to determine the size of the captured proteins. We demonstrate the identification of different antibody fragments by means of their kinetic fingerprint. The switchDNA method represents a generic approach to simultaneously detect and size target molecules using a single analytical platform.

A simple electric circuit model for proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Lazarou, Stavros; Pyrgioti, Eleftheria; Alexandridis, Antonio T.

A simple and novel dynamic circuit model for a proton exchange membrane (PEM) fuel cell suitable for the analysis and design of power systems is presented. The model takes into account phenomena like activation polarization, ohmic polarization, and mass transport effect present in a PEM fuel cell. The proposed circuit model includes three resistors to approach adequately these phenomena; however, since for the PEM dynamic performance connection or disconnection of an additional load is of crucial importance, the proposed model uses two saturable inductors accompanied by an ideal transformer to simulate the double layer charging effect during load step changes. To evaluate the effectiveness of the proposed model its dynamic performance under load step changes is simulated. Experimental results coming from a commercial PEM fuel cell module that uses hydrogen from a pressurized cylinder at the anode and atmospheric oxygen at the cathode, clearly verify the simulation results.

Ohmic contacts to semiconducting diamond

NASA Astrophysics Data System (ADS)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Dramatically enhanced non-Ohmic properties and maximum stored energy density in ceramic-metal nanocomposites: CaCu3Ti4O12/Au nanoparticles

PubMed Central

2013-01-01

Non-Ohmic and dielectric properties of a novel CaCu3Ti4O12/Au nanocomposite were investigated. Introduction of 2.5 vol.% Au nanoparticles in CaCu3Ti4O12 ceramics significantly reduced the loss tangent while its dielectric permittivity remained unchanged. The non-Ohmic properties of CaCu3Ti4O12/Au (2.5 vol.%) were dramatically improved. A nonlinear coefficient of ≈ 17.7 and breakdown electric field strength of 1.25 × 104 V/m were observed. The maximum stored energy density was found to be 25.8 kJ/m3, which is higher than that of pure CaCu3Ti4O12 by a factor of 8. Au addition at higher concentrations resulted in degradation of dielectric and non-Ohmic properties, which is described well by percolation theory. PMID:24257060

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

NASA Astrophysics Data System (ADS)

Frazzetto, Alessia; Giannazzo, Filippo; Lo Nigro, Raffaella; di Franco, Salvatore; Bongiorno, Corrado; Saggio, Mario; Zanetti, Edoardo; Raineri, Vito; Roccaforte, Fabrizio

2011-12-01

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM. The characteristics of the contacts were significantly affected by the roughness of the underlying SiC. In particular, the surface roughness of the Al-implanted SiC regions annealed at 1700°C could be strongly reduced using a protective carbon capping layer during annealing. This latter resulted in an improved surface morphology and specific contact resistance of the Ti/Al ohmic contacts formed on these regions. The microstructure of the contacts was monitored by X-ray diffraction analysis and a cross-sectional transmission electron microscopy, and correlated with the electrical results.

Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaminska, E.; Piotrowska, A.; Barcz, A.

2000-11-27

We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by suchmore » a heat treatment. The processing in O{sub 2}, on the contrary, causes the interdiffusion of metallization constituents and the incorporation of oxygen into the semiconductor subcontact region, which could be responsible for increased resistivity of these contacts.« less

Ohmic contacts to Al-rich AlGaN heterostructures

DOE PAGES

Douglas, E. A.; Reza, S.; Sanchez, C.; ...

2017-06-06

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Evaluation of non-thermal effects of electricity on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating.

PubMed

Jaeschke, Débora Pez; Marczak, Ligia Damasceno Ferreira; Mercali, Giovana Domeneghini

2016-05-15

The effect of electric field on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating was evaluated. Ascorbic acid kinetic degradation was evaluated at 80, 85, 90 and 95°C during 60 min of thermal treatment by ohmic and conventional heating. Carotenoid degradation was evaluated at 90 and 95°C after 50 min of treatment. The different temperatures evaluated showed the same effect on degradation rates. To investigate the influence of oxygen concentration on the degradation process, ohmic heating was also carried out under rich and poor oxygen modified atmospheres at 90°C. Ascorbic acid and carotenoid degradation was higher under a rich oxygen atmosphere, indicating that oxygen is the limiting reagent of the degradation reaction. Ascorbic acid and carotenoid degradation was similar for both heating technologies, demonstrating that the presence of the oscillating electric field did not influence the mechanisms and rates of reactions associated with the degradation process. Copyright © 2015 Elsevier Ltd. All rights reserved.

Weather as a proximate explanation for fission–fusion dynamics in female northern long-eared bats

USGS Publications Warehouse

Patriquin, Krista J.; Leonard, Marty L.; Broders, Hugh G.; Ford, W. Mark; Britzke, Eric R.; Silvis, Alexander

2016-01-01

Fission–fusion dynamics appear common among temperate bats where females form roost groups that change in size and composition, as females switch roosts almost daily. One hypothesis for frequent roost switching is that females move to find suitable thermal conditions as ambient conditions change. Tests of this hypothesis have, however, been conducted mostly at roosts in artificial structures where microclimate is relatively stable. The goal of our study was to determine whether roost switching and roost use by northern long-eared bats, Myotis septentrionalis, that roost in trees are related to ambient conditions. We used generalized linear fixed effects models to explore the influence of roost characteristics and changes in ambient conditions on the likelihood of roost switching. We used canonical correlation analyses to examine the relationship between ambient conditions and roost characteristics. Roost switching was indeed linked to ambient conditions together with characteristics of roosts on the previous day; the best descriptors of roost switching differed between the two geographical regions we analysed. In Nova Scotia, females were less likely to switch roosts when it rained, particularly if they were in roosts below surrounding canopy whereas they were more likely to switch roosts when they were in roosts of high decay. Females roosted in shorter trees in earlier decay classes on warm days, as well as on windy and rainy days. In Kentucky, females were more likely to switch roosts at high temperatures, particularly when they were in roosts in high decay. Females roosted in shorter, decayed trees on warm days, and in less decayed trees with small diameter on windy and rainy days. Our results suggest bats switch roosts in response to changes in ambient conditions to select suitable roosting conditions, which may explain some of the proximate factors shaping fission–fusion dynamics of bats.

How input fluctuations reshape the dynamics of a biological switching system

NASA Astrophysics Data System (ADS)

Hu, Bo; Kessler, David A.; Rappel, Wouter-Jan; Levine, Herbert

2012-12-01

An important task in quantitative biology is to understand the role of stochasticity in biochemical regulation. Here, as an extension of our recent work [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.107.148101 107, 148101 (2011)], we study how input fluctuations affect the stochastic dynamics of a simple biological switch. In our model, the on transition rate of the switch is directly regulated by a noisy input signal, which is described as a non-negative mean-reverting diffusion process. This continuous process can be a good approximation of the discrete birth-death process and is much more analytically tractable. Within this setup, we apply the Feynman-Kac theorem to investigate the statistical features of the output switching dynamics. Consistent with our previous findings, the input noise is found to effectively suppress the input-dependent transitions. We show analytically that this effect becomes significant when the input signal fluctuates greatly in amplitude and reverts slowly to its mean.

Regular and chaotic motions of the Chaplygin sleigh with periodically switched location of nonholonomic constraint

NASA Astrophysics Data System (ADS)

Kuznetsov, Sergey P.

2017-04-01

We consider motions of the Chaplygin sleigh on a plane supposing that the nonholonomic constraint is located periodically turn by turn at each of three legs supporting the sleigh. We assume that at switching on the constraint the respective element (“knife-edge”) is directed along the local velocity vector and becomes fixed relatively to the sleigh for a certain time interval till the next switch. Differential equations of the mathematical model are formulated and analytical derivation of a 2D map for the state transformation on the switching period is provided. The dynamics takes place with conservation of the mechanical energy. Numerical simulations show phenomena characteristic to nonholonomic systems with complex dynamics. In particular, on the energy surface attractors may occur responsible for regular sustained motions settling in domains of prevalent area compression by the map. In addition, chaotic and quasi-periodic regimes take place similar to those observed in conservative nonlinear dynamics.

Model predictive control of an air suspension system with damping multi-mode switching damper based on hybrid model

NASA Astrophysics Data System (ADS)

Sun, Xiaoqiang; Yuan, Chaochun; Cai, Yingfeng; Wang, Shaohua; Chen, Long

2017-09-01

This paper presents the hybrid modeling and the model predictive control of an air suspension system with damping multi-mode switching damper. Unlike traditional damper with continuously adjustable damping, in this study, a new damper with four discrete damping modes is applied to vehicle semi-active air suspension. The new damper can achieve different damping modes by just controlling the on-off statuses of two solenoid valves, which makes its damping adjustment more efficient and more reliable. However, since the damping mode switching induces different modes of operation, the air suspension system with the new damper poses challenging hybrid control problem. To model both the continuous/discrete dynamics and the switching between different damping modes, the framework of mixed logical dynamical (MLD) systems is used to establish the system hybrid model. Based on the resulting hybrid dynamical model, the system control problem is recast as a model predictive control (MPC) problem, which allows us to optimize the switching sequences of the damping modes by taking into account the suspension performance requirements. Numerical simulations results demonstrate the efficacy of the proposed control method finally.

Hybrid particle-continuum simulations coupling Brownian dynamics and local dynamic density functional theory.

PubMed

Qi, Shuanhu; Schmid, Friederike

2017-11-08

We present a multiscale hybrid particle-field scheme for the simulation of relaxation and diffusion behavior of soft condensed matter systems. It combines particle-based Brownian dynamics and field-based local dynamics in an adaptive sense such that particles can switch their level of resolution on the fly. The switching of resolution is controlled by a tuning function which can be chosen at will according to the geometry of the system. As an application, the hybrid scheme is used to study the kinetics of interfacial broadening of a polymer blend, and is validated by comparing the results to the predictions from pure Brownian dynamics and pure local dynamics calculations.

Large deviations in the presence of cooperativity and slow dynamics

NASA Astrophysics Data System (ADS)

Whitelam, Stephen

2018-06-01

We study simple models of intermittency, involving switching between two states, within the dynamical large-deviation formalism. Singularities appear in the formalism when switching is cooperative or when its basic time scale diverges. In the first case the unbiased trajectory distribution undergoes a symmetry breaking, leading to a change in shape of the large-deviation rate function for a particular dynamical observable. In the second case the symmetry of the unbiased trajectory distribution remains unbroken. Comparison of these models suggests that singularities of the dynamical large-deviation formalism can signal the dynamical equivalent of an equilibrium phase transition but do not necessarily do so.

Lack of dependence on resonant error field of locked mode island size in ohmic plasmas in DIII-D

DOE PAGES

Haye, R. J. La; Paz-Soldan, C.; Strait, E. J.

2015-01-23

DIII-D experiments show that fully penetrated resonant n=1 error field locked modes in Ohmic plasmas with safety factor q 95≳3 grow to similar large disruptive size, independent of resonant error field correction. Relatively small resonant (m/n=2/1) static error fields are shielded in Ohmic plasmas by the natural rotation at the electron diamagnetic drift frequency. However, the drag from error fields can lower rotation such that a bifurcation results, from nearly complete shielding to full penetration, i.e., to a driven locked mode island that can induce disruption.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, Bhushan L.

1995-01-01

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

PubMed

Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

2012-07-17

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Development of a 5.5 m diameter vertical axis wind turbine, phase 3

NASA Astrophysics Data System (ADS)

Dekitsch, A.; Etzler, C. C.; Fritzsche, A.; Lorch, G.; Mueller, W.; Rogalla, K.; Schmelzle, J.; Schuhwerk, W.; Vollan, A.; Welte, D.

1982-06-01

In continuation of development of a 5.5 m diameter vertical axis windmill that consists in conception, building, and wind tunnel testing, a Darrieus rotor windpowered generator feeding an isolated network under different wind velocity conditions and with optimal energy conversion efficiency was designed built, and field tested. The three-bladed Darrieus rotor tested in the wind tunnel was equiped with two variable pitch Savonius rotors 2 m in diameter. By means of separate measures of the aerodynamic factors and the energy consumption, effect of revisions and optimizations on different elements was assessed. Pitch adjustement of the Savonius blades, lubrication of speed reducer, rotor speed at cut-in of generator field excitation, time constant of field excitation, stability conditions, switch points of ohmic resistors which combined with a small electric battery simulated a larger isolated network connected with a large storage battery, were investigated. Fundamentals for the economic series production of windpowered generators with Darrieus rotors for the control and the electric conversion system are presented.

All-dielectric band stop filter at terahertz frequencies

NASA Astrophysics Data System (ADS)

Yin, Shan; Chen, Lin

2018-01-01

We design all-dielectric band stop filters with silicon subwavelength rod and block arrays at terahertz frequencies. Supporting magnetic dipole resonances originated from the Mia resonance, the all-dielectric filters can modulate the working band by simply varying the structural geometry, while eliminating the ohmic loss induced by the traditional metallic metamaterials and uninvolved with the complicated mechanism. The nature of the resonance in the silicon arrays is clarified, which is attributed to the destructive interference between the directly transmitted waves and the waves emitted from the magnetic dipole resonances, and the resonance frequency is determined by the dielectric structure. By particularly designing the geometrical parameters, the profile of the transmission spectrum can be tailored, and the step-like band edge can be obtained. The all-dielectric filters can realize 93% modulation of the transmission within 0.04 THz, and maintain the bandwidth of 0.05 THz. This work provides a method to develop THz functional devices, such as filters, switches and sensors.

Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

NASA Astrophysics Data System (ADS)

Maslovskaya, A. G.; Barabash, T. K.

2018-03-01

The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

Coupling of protein localization and cell movements by a dynamically localized response regulator in Myxococcus xanthus

PubMed Central

Leonardy, Simone; Freymark, Gerald; Hebener, Sabrina; Ellehauge, Eva; Søgaard-Andersen, Lotte

2007-01-01

Myxococcus xanthus cells harbor two motility machineries, type IV pili (Tfp) and the A-engine. During reversals, the two machineries switch polarity synchronously. We present a mechanism that synchronizes this polarity switching. We identify the required for motility response regulator (RomR) as essential for A-motility. RomR localizes in a bipolar, asymmetric pattern with a large cluster at the lagging cell pole. The large RomR cluster relocates to the new lagging pole in parallel with cell reversals. Dynamic RomR localization is essential for cell reversals, suggesting that RomR relocalization induces the polarity switching of the A-engine. The analysis of RomR mutants shows that the output domain targets RomR to the poles and the receiver domain is essential for dynamic localization. The small GTPase MglA establishes correct RomR polarity, and the Frz two-component system regulates dynamic RomR localization. FrzS localizes with Tfp at the leading pole and relocates in an Frz-dependent manner to the opposite pole during reversals; FrzS and RomR localize and oscillate independently. The Frz system synchronizes these oscillations and thus the synchronous polarity switching of the motility machineries. PMID:17932488

Switching among graphic patterns is governed by oscillatory coordination dynamics: implications for understanding handwriting

PubMed Central

Zanone, Pier-Giorgio; Athènes, Sylvie

2013-01-01

Revisiting an original idea by Hollerbach (1981), previous work has established that the production of graphic shapes, assumed to be the blueprint for handwriting, is governed by the dynamics of orthogonal non-linear coupled oscillators. Such dynamics determines few stable coordination patterns, giving rise to a limited set of preferred graphic shapes, namely, four lines and four ellipsoids independent of orientation. The present study investigates the rules of switching among such graphic coordination patterns. Seven participants were required to voluntarily switch within twelve pairs of shapes presented on a graphic tablet. In line with previous theoretical and experimental work on bimanual coordination, results corroborated our hypothesis that the relative stability of the produced coordination patterns determines the time needed for switching: the transition to a more stable pattern was shorter, and inversely. Moreover, switching between patterns with the same orientation but different eccentricities was faster than with a change in orientation. Nonetheless, the switching time covaried strictly with the change in relative phase effected by the transition between two shapes, whether this implied a change in eccentricity or in orientation. These findings suggest a new operational definition of what the (motor) units or strokes of handwriting are and shed a novel light on how coarticulation and recruitment of degrees of freedom may occur in graphic skills. They also yield some leads for understanding the acquisition and the neural underpinnings of handwriting. PMID:24069014

Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

PubMed

Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

2015-02-01

To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P < 0.01) at the same target temperature. It was concluded that the electrical field enhanced the urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

Dynamic Testing and Automatic Repair of Reconfigurable Wiring Harnesses

DTIC Science & Technology

2006-11-27

Switch An M ×N grid of switches configured to provide a M -input, N -output routing network. Permutation Network A permutation network performs an...wiring reduces the effective advantage of their reduced switch count, particularly when considering that regular grids (crossbar switches being a...are connected to. The outline circuit shown in Fig. 20 shows how a suitable ‘discovery probe’ might be implemented. The circuit shows a UART

Decentralized Adaptive Neural Output-Feedback DSC for Switched Large-Scale Nonlinear Systems.

PubMed

Lijun Long; Jun Zhao

2017-04-01

In this paper, for a class of switched large-scale uncertain nonlinear systems with unknown control coefficients and unmeasurable states, a switched-dynamic-surface-based decentralized adaptive neural output-feedback control approach is developed. The approach proposed extends the classical dynamic surface control (DSC) technique for nonswitched version to switched version by designing switched first-order filters, which overcomes the problem of multiple "explosion of complexity." Also, a dual common coordinates transformation of all subsystems is exploited to avoid individual coordinate transformations for subsystems that are required when applying the backstepping recursive design scheme. Nussbaum-type functions are utilized to handle the unknown control coefficients, and a switched neural network observer is constructed to estimate the unmeasurable states. Combining with the average dwell time method and backstepping and the DSC technique, decentralized adaptive neural controllers of subsystems are explicitly designed. It is proved that the approach provided can guarantee the semiglobal uniformly ultimately boundedness for all the signals in the closed-loop system under a class of switching signals with average dwell time, and the tracking errors to a small neighborhood of the origin. A two inverted pendulums system is provided to demonstrate the effectiveness of the method proposed.

Methodology for Wide Band-Gap Device Dynamic Characterization

DOE PAGES

Zhang, Zheyu; Guo, Ben; Wang, Fei Fred; ...

2017-01-19

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method ismore » proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.« less

Lithium-ion battery cell-level control using constrained model predictive control and equivalent circuit models

NASA Astrophysics Data System (ADS)

Xavier, Marcelo A.; Trimboli, M. Scott

2015-07-01

This paper introduces a novel application of model predictive control (MPC) to cell-level charging of a lithium-ion battery utilizing an equivalent circuit model of battery dynamics. The approach employs a modified form of the MPC algorithm that caters for direct feed-though signals in order to model near-instantaneous battery ohmic resistance. The implementation utilizes a 2nd-order equivalent circuit discrete-time state-space model based on actual cell parameters; the control methodology is used to compute a fast charging profile that respects input, output, and state constraints. Results show that MPC is well-suited to the dynamics of the battery control problem and further suggest significant performance improvements might be achieved by extending the result to electrochemical models.

Discrete-time systems with random switches: From systems stability to networks synchronization.

PubMed

Guo, Yao; Lin, Wei; Ho, Daniel W C

2016-03-01

In this article, we develop some approaches, which enable us to more accurately and analytically identify the essential patterns that guarantee the almost sure stability of discrete-time systems with random switches. We allow for the case that the elements in the switching connection matrix even obey some unbounded and continuous-valued distributions. In addition to the almost sure stability, we further investigate the almost sure synchronization in complex dynamical networks consisting of randomly connected nodes. Numerical examples illustrate that a chaotic dynamics in the synchronization manifold is preserved when statistical parameters enter some almost sure synchronization region established by the developed approach. Moreover, some delicate configurations are considered on probability space for ensuring synchronization in networks whose nodes are described by nonlinear maps. Both theoretical and numerical results on synchronization are presented by setting only a few random connections in each switch duration. More interestingly, we analytically find it possible to achieve almost sure synchronization in the randomly switching complex networks even with very large population sizes, which cannot be easily realized in non-switching but deterministically connected networks.

Discrete-time systems with random switches: From systems stability to networks synchronization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Lin, Wei, E-mail: wlin@fudan.edu.cn; Shanghai Key Laboratory of Contemporary Applied Mathematics, LMNS, and Shanghai Center for Mathematical Sciences, Shanghai 200433

2016-03-15

In this article, we develop some approaches, which enable us to more accurately and analytically identify the essential patterns that guarantee the almost sure stability of discrete-time systems with random switches. We allow for the case that the elements in the switching connection matrix even obey some unbounded and continuous-valued distributions. In addition to the almost sure stability, we further investigate the almost sure synchronization in complex dynamical networks consisting of randomly connected nodes. Numerical examples illustrate that a chaotic dynamics in the synchronization manifold is preserved when statistical parameters enter some almost sure synchronization region established by the developedmore » approach. Moreover, some delicate configurations are considered on probability space for ensuring synchronization in networks whose nodes are described by nonlinear maps. Both theoretical and numerical results on synchronization are presented by setting only a few random connections in each switch duration. More interestingly, we analytically find it possible to achieve almost sure synchronization in the randomly switching complex networks even with very large population sizes, which cannot be easily realized in non-switching but deterministically connected networks.« less

Linear dynamic range enhancement in a CMOS imager

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A CMOS imager with increased linear dynamic range but without degradation in noise, responsivity, linearity, fixed-pattern noise, or photometric calibration comprises a linear calibrated dual gain pixel in which the gain is reduced after a pre-defined threshold level by switching in an additional capacitance. The pixel may include a novel on-pixel latch circuit that is used to switch in the additional capacitance.

A stochastic and dynamical view of pluripotency in mouse embryonic stem cells

PubMed Central

Lee, Esther J.

2018-01-01

Pluripotent embryonic stem cells are of paramount importance for biomedical sciences because of their innate ability for self-renewal and differentiation into all major cell lines. The fateful decision to exit or remain in the pluripotent state is regulated by complex genetic regulatory networks. The rapid growth of single-cell sequencing data has greatly stimulated applications of statistical and machine learning methods for inferring topologies of pluripotency regulating genetic networks. The inferred network topologies, however, often only encode Boolean information while remaining silent about the roles of dynamics and molecular stochasticity inherent in gene expression. Herein we develop a framework for systematically extending Boolean-level network topologies into higher resolution models of networks which explicitly account for the promoter architectures and gene state switching dynamics. We show the framework to be useful for disentangling the various contributions that gene switching, external signaling, and network topology make to the global heterogeneity and dynamics of transcription factor populations. We find the pluripotent state of the network to be a steady state which is robust to global variations of gene switching rates which we argue are a good proxy for epigenetic states of individual promoters. The temporal dynamics of exiting the pluripotent state, on the other hand, is significantly influenced by the rates of genetic switching which makes cells more responsive to changes in extracellular signals. PMID:29451874

PRELIMINARY STUDY OF THE PRESSURE TRANSDUCER PROJECT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eldridge, A.J.

1956-08-01

A feasibility study is presented of the application of several commercially available pressure transducers for incorporation in a dynamic baro- switch tester or for use in a baro-switch application. (auth)

Cold-start characteristics of polymer electrolyte fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishler, Jeff; Mukundan, Rangachary; Wang, Yun

2010-01-01

In this paper, we investigate the electrochemical reaction kinetics, species transport, and solid water dynamics in a polymer electrolyte fuel cell (PEFC) during cold start. A simplitied analysis is developed to enable the evaluation of the impact of ice volume fraction on cell performance during coldstart. Supporting neutron imaging data are also provided to reveal the real-time water evolution. Temperature-dependent voltage changes due to the reaction kinetics and ohmic loss are also analyzed based on the ionic conductivity of the membrane at subfreezing temperature. The analysis is valuable for the fundamental study of PEFC cold-start.

Formation of gallium vacancies and their effects on the nanostructure of Pd/Ir/Au ohmic contact to p-type GaN.

PubMed

Kim, Kyong Nam; Kim, Tae Hyung; Seo, Jin Seok; Kim, Ki Seok; Bae, Jeong Woon; Yeom, Geun Young

2013-12-01

The properties of Pd/Ir/Au ohmic metallization on p-type GaN have been investigated. Contacts annealed at 400 degrees C in O2 atmosphere demonstrated excellent ohmic characteristics with a specific contact resistivity of 1.5 x 10(-5) Omega-cm2. This is attributed to the formation of Ga vacancies at the contact metal-semiconductor interfacial region due to the out-diffusion of Ga atoms. The out-diffusion of Ga atoms was confirmed by X-ray photoelectron spectroscopy depth profiles, high-resolution transmission electron microscopy, and electron energy loss spectroscopy using a scanning transmission electron microscope.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.

PubMed

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-12-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 -2 Ω·cm 2 . Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

NASA Astrophysics Data System (ADS)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, B.L.

1995-07-04

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn

NASA Astrophysics Data System (ADS)

Zhang, Xu; Zhang, Dongliang; Zheng, Jun; Liu, Zhi; He, Chao; Xue, Chunlai; Zhang, Guangze; Li, Chuanbo; Cheng, Buwen; Wang, Qiming

2015-12-01

In this study, a Ni/Al Ohmic contact on a highly doped n-type GeSn has been investigated. A specific contact resistivity as low as (2.26 ± 0.11) × 10-4 Ω cm2 was obtained with the GeSn sample annealed at a temperature of 450 °C for 30 s. The linear Ohmic behavior was attributed to the low resistance of the Ni(GeSn) phase; this behavior was determined using glancing-angle X-ray diffraction, and the quantum tunneling current through the Schottky barrier narrowed because of high doping; this phenomenon was confirmed from the contact resistance characteristics at different temperatures from 45 to 205 K.

Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

NASA Astrophysics Data System (ADS)

Jeong, Seonghoon; Lee, Sung-Nam; Kim, Hyunsoo

2018-01-01

The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/ p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10-3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

Dendritic Slow Dynamics Enables Localized Cortical Activity to Switch between Mobile and Immobile Modes with Noisy Background Input

PubMed Central

Kurashige, Hiroki; Câteau, Hideyuki

2011-01-01

Mounting lines of evidence suggest the significant computational ability of a single neuron empowered by active dendritic dynamics. This motivates us to study what functionality can be acquired by a network of such neurons. The present paper studies how such rich single-neuron dendritic dynamics affects the network dynamics, a question which has scarcely been specifically studied to date. We simulate neurons with active dendrites networked locally like cortical pyramidal neurons, and find that naturally arising localized activity – called a bump – can be in two distinct modes, mobile or immobile. The mode can be switched back and forth by transient input to the cortical network. Interestingly, this functionality arises only if each neuron is equipped with the observed slow dendritic dynamics and with in vivo-like noisy background input. If the bump activity is considered to indicate a point of attention in the sensory areas or to indicate a representation of memory in the storage areas of the cortex, this would imply that the flexible mode switching would be of great potential use for the brain as an information processing device. We derive these conclusions using a natural extension of the conventional field model, which is defined by combining two distinct fields, one representing the somatic population and the other representing the dendritic population. With this tool, we analyze the spatial distribution of the degree of after-spike adaptation and explain how we can understand the presence of the two distinct modes and switching between the modes. We also discuss the possible functional impact of this mode-switching ability. PMID:21931635

Flexible, Carbon-Based Ohmic Contacts for Organic Transistors

NASA Technical Reports Server (NTRS)

Brandon, Erik

2005-01-01

A low-temperature process for fabricating flexible, ohmic contacts for use in organic thin-film transistors (OTFTs) has been developed. Typical drainsource contact materials used previously for OTFTs include (1) vacuum-deposited noble-metal contacts and (2) solution-deposited intrinsically conducting molecular or polymeric contacts. Both of these approaches, however, have serious drawbacks.

New insights on boundary plasma turbulence and the Quasi-Coherent Mode in Alcator C-Mod using a Mirror Langmuir Probe

NASA Astrophysics Data System (ADS)

Labombard, Brian

2013-10-01

A ``Mirror Langmuir Probe'' (MLP) diagnostic has been used to interrogate edge plasma profiles and turbulence in Alcator C-Mod with unprecedented detail, yielding fundamental insights on the Quasi-Coherent Mode (QCM) - a mode that regulates plasma density and impurities in EDA H-modes without ELMs. The MLP employs a fast-switching, self-adapting bias scheme, recording density, electron temperature and plasma potential simultaneously at high bandwidth (~1 MHz) on each of four separate electrodes on a scanning probe. Temporal dynamics are followed in detail; wavenumber-frequency spectra and phase relationships are readily deduced. Poloidal field fluctuations are recorded separately with a two-coil, scanning probe. Results from ohmic L-mode and H-mode plasmas are reported, including key observations of the QCM: The QCM lives in a region of positive radial electric field, with a mode width (~3 mm) that spans open and closed field line regions. Remarkably large amplitude (~30%), sinusoidal bursts in density, electron temperature and plasma potential fluctuations are observed that are in phase; potential lags density by at most 10 degrees. Propagation velocity of the mode corresponds to the sum of local E × B and electron diamagnetic drift velocities - quantities that are deduced directly from time-averaged profiles. Poloidal magnetic field fluctuations project to parallel current densities of ~5 amps/cm2 in the mode layer, with significant parallel electromagnetic induction. Electron force balance is examined, unambiguously identifying the mode type. It is found that fluctuations in parallel electron pressure gradient are roughly balanced by the sum of electrostatic and electromotive forces. Thus the primary mode structure of the QCM is that of a drift-Alfven wave. Work supported by US DoE award DE-FC02-99ER54512.

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

NASA Astrophysics Data System (ADS)

Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomás

2013-08-01

A BCl3 surface plasma treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors with a GaN cap layer has been established. This BCl3 plasma treatment was performed by an inductively coupled plasma reactive ion etching system under conditions that prevented any recess etching. The average contact resistances without plasma treatment, with SiCl4, and with BCl3 plasma treatment were 0.34, 0.41, and 0.17 Ω mm, respectively. Also, the standard deviation of the ohmic contact resistance with BCl3 plasma treatment was decreased. This decrease in the standard deviation of contact resistance can be explained by analyzing the surface condition of GaN with x-ray photoelectron spectroscopy and positron annihilation spectroscopy. We found that the proposed BCl3 plasma treatment technique can not only remove surface oxide but also introduce surface donor states that contribute to lower the ohmic contact resistance.

Investigation of impurity transport using laser blow-off technique in the HL-2A Ohmic and ECRH plasmas

NASA Astrophysics Data System (ADS)

Kai, Zhang; Zheng-Ying, Cui; Ping, Sun; Chun-Feng, Dong; Wei, Deng; Yun-Bo, Dong; Shao-Dong, Song; Min, Jiang; Yong-Gao, Li; Ping, Lu; Qing-Wei, Yang

2016-06-01

Impurity transports in two neighboring discharges with and without electron cyclotron resonance heating (ECRH) are studied in the HL-2A tokamak by laser blow-off (LBO) technique. The progression of aluminium ions as the trace impurity is monitored by soft x-ray (SXR) and bolometer detector arrays with good temporal and spatial resolutions. Obvious difference in the time trace of the signal between the Ohmic and ECRH L-mode discharges is observed. Based on the numerical simulation with one-dimensional (1D) impurity transport code STRAHL, the radial profiles of impurity diffusion coefficient D and convective velocity V are obtained for each shot. The result shows that the diffusion coefficient D significantly increases throughout the plasma minor radius for the ECRH case with respect to the Ohmic case, and that the convection velocity V changes from negative (inward) for the Ohmic case to partially positive (outward) for the ECRH case. The result on HL-2A confirms the pump out effect of ECRH on impurity profile as reported on various other devices.

Ohmic ITBs in Alcator C-Mod

NASA Astrophysics Data System (ADS)

Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

2007-11-01

Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, S.W.; Yoon, S.K.; Kwak, J.S.

2006-05-15

We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi(10 nm)/Au(10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99x10{sup -4} to 2.54x10{sup -4} {omega} cm{sup 2}, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaN/GaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance ofmore » the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p-Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.« less

Sintered Cr/Pt and Ni/Au ohmic contacts to B 12P 2

DOE PAGES

Frye, Clint D.; Kucheyev, Sergei O.; Edgar, James H.; ...

2015-04-09

With this study, icosahedral boron phosphide (B 12P 2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B 12P 2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10 –4 Ω cm 2, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contactmore » resistance was ~l–4 × 10 –4 Ω cm 2 after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B 12P 2 at 700 °C and a reaction layer between Ni and B 12P 2 thinner than ~25 nm at 500 °C.« less

A low-g electrostatically actuated resonant switch

NASA Astrophysics Data System (ADS)

Ramini, A.; Younis, M. I.; Su, Q. T.

2013-02-01

This work investigates a new concept of an electrostatically actuated resonant switch (EARS) for earthquake detection and low-g seismic applications. The resonator is designed to operate close to the instability bands of frequency-response curves, where it is forced to collapse dynamically (pull-in) if operated within these bands. By careful tuning, the resonator can be made to enter the pull-in instability zone upon the detection of the earthquake signal, thereby snapping down as an electric switch. Such a switching action can be functionalized for alarming purposes or can be used to activate a network of sensors for seismic activity recording. The EARS is modeled and its dynamic response is simulated using a nonlinear single-degree-of-freedom model. Experimental investigation is conducted demonstrating the EARS’ capability of being triggered at small levels of acceleration as low as 0.02g. Results for the switching events for several levels of low-g accelerations using both theory and experiments are presented and compared.

Strategies for dynamic soft-landing in capacitive microelectromechanical switches

NASA Astrophysics Data System (ADS)

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad A.

2011-06-01

Electromechanical dielectric degradation associated with the hard landing of movable electrode is a technology-inhibiting reliability concern for capacitive RF-MEMS switches. In this letter, we propose two schemes for dynamic soft-landing that obviate the need for external feedback circuitry. Instead, the proposed resistive and capacitive braking schemes can reduce impact velocity significantly without compromising other performance characteristics like pull-in voltage and pull-in time. Resistive braking is achieved by inserting a resistance in series with the voltage source whereas capacitive braking requires patterning of the electrode or the dielectric. Our results have important implications to the design and optimization of reliability aware electrostatically actuated MEMS switches.

Joint action syntax in Japanese martial arts.

PubMed

Yamamoto, Yuji; Yokoyama, Keiko; Okumura, Motoki; Kijima, Akifumi; Kadota, Koji; Gohara, Kazutoshi

2013-01-01

Participation in interpersonal competitions, such as fencing or Japanese martial arts, requires players to make instantaneous decisions and execute appropriate motor behaviors in response to various situations. Such actions can be understood as complex phenomena emerging from simple principles. We examined the intentional switching dynamics associated with continuous movement during interpersonal competition in terms of their emergence from a simple syntax. Linear functions on return maps identified two attractors as well as the transitions between them. The effects of skill differences were evident in the second- and third-order state-transition diagrams for these two attractors. Our results suggest that abrupt switching between attractors is related to the diverse continuous movements resulting from quick responses to sudden changes in the environment. This abrupt-switching-quick-response behavior is characterized by a joint action syntax. The resulting hybrid dynamical system is composed of a higher module with discrete dynamics and a lower module with continuous dynamics. Our results suggest that intelligent human behavior and robust autonomy in real-life scenarios are based on this hybrid dynamical system, which connects interpersonal coordination and competition.

Ohmic ignition with high engineering beta based on the RFP

NASA Astrophysics Data System (ADS)

Sarff, J. S.; Anderson, J. K.; Chapman, B. E.; McCollam, K. J.

2017-10-01

The RFP configuration allows the possibility of ohmic ignition for fusion energy, eliminating the need for auxiliary heating by rf or neutral beam injection. Complex plasma-facing antennas and NBI sources are therefore not required, simplifying the difficult fusion materials challenge. While all toroidal configurations require a volume-average 〈 B 〉 >= 5 T, the field strength at the magnet in the RFP is only Bcoil 3T since plasma current generates almost all of the field. Engineering beta is therefore maximized. We summarize access to ohmic ignition by examining a Lawson-like power balance for an RFP fusion plasma comparable to the ARIES-AT advanced tokamak, which generates neutron wall loading Pn / A 5 MW/m2. The required energy confinement for ohmic ignition in an RFP is similar to that for a tokamak. Confinement in MST is comparable to a same-size, same-field tokamak plasma, but 〈 B 〉 in MST is only 1/20th that required for fusion. While transport could ultimately be dominated by micro turbulence, extrapolation of stochastic transport using Lundquist number scaling for MHD tearing indicates standard RFP confinement (not enhanced by current profile control) could be sufficient to access ohmic ignition. This bolsters the possibility for steady-state inductive sustainment using oscillating field current drive. The high beta and classical energetic ion confinement measured in MST also bolster the RFP's fusion potential. Work supported by U.S. DoE.

Doubly differential star-16-QAM for fast wavelength switching coherent optical packet transceiver.

PubMed

Liu, Fan; Lin, Yi; Walsh, Anthony J; Yu, Yonglin; Barry, Liam P

2018-04-02

A coherent optical packet transceiver based on doubly differential star 16-ary quadrature amplitude modulation (DD-star-16-QAM) is presented for spectrally and energy efficient reconfigurable networks. The coding and decoding processes for this new modulation format are presented, simulations and experiments are then performed to investigate the performance of the DD-star-16-QAM in static and dynamic scenarios. The static results show that the influence of frequency offset (FO) can be cancelled out by doubly differential (DD) coding and the correction range is only limited by the electronic bandwidth of the receivers. In the dynamic scenario with a time-varying FO and linewidth, the DD-star-16-QAM can overcome the time-varying FO, and the switching time of around 70 ns is determined by the time it takes the dynamic linewidth to reach the requisite level. This format can thus achieve a shorter waiting time after switching tunable lasers than the commonly used square-16-QAM, in which the transmission performance is limited by the frequency transients after the wavelength switch.

Combining a Toggle Switch and a Repressilator within the AC-DC Circuit Generates Distinct Dynamical Behaviors.

PubMed

Perez-Carrasco, Ruben; Barnes, Chris P; Schaerli, Yolanda; Isalan, Mark; Briscoe, James; Page, Karen M

2018-04-25

Although the structure of a genetically encoded regulatory circuit is an important determinant of its function, the relationship between circuit topology and the dynamical behaviors it can exhibit is not well understood. Here, we explore the range of behaviors available to the AC-DC circuit. This circuit consists of three genes connected as a combination of a toggle switch and a repressilator. Using dynamical systems theory, we show that the AC-DC circuit exhibits both oscillations and bistability within the same region of parameter space; this generates emergent behaviors not available to either the toggle switch or the repressilator alone. The AC-DC circuit can switch on oscillations via two distinct mechanisms, one of which induces coherence into ensembles of oscillators. In addition, we show that in the presence of noise, the AC-DC circuit can behave as an excitable system capable of spatial signal propagation or coherence resonance. Together, these results demonstrate how combinations of simple motifs can exhibit multiple complex behaviors. Copyright © 2018 The Author(s). Published by Elsevier Inc. All rights reserved.

MST's Programmable Power Supplies: Bt Update, Bp Prototype

NASA Astrophysics Data System (ADS)

Holly, D. J.; Chapman, B. E.; McCollam, K. J.; Morin, J. C.; Thomas, M. A.

2013-10-01

MST's toroidal field programmable power supply (Bt PPS) has now been in operation for several years and has provided important new capabilities. One of the primary goals for the Bt PPS is the partial optimization of inductive current profile control, involving control of the poloidal electric field. The Bt PPS has achieved fluctuation reduction over MST's entire range of Ip. At the largest Ip, the Bt PPS achieves fluctuation reduction with a smaller poloidal electric field than the previous passive system, implying that substantially longer periods of current profile control may be possible. The Bt PPS has also been used to produce Ohmic tokamak plasmas in MST. With an applied toroidal field of 0.135 T, and q(a) > 2, the estimated energy confinement time is roughly consistent with neo-Alcator scaling. Driving q(a) < 2 with larger Ip, the confinement time degrades, but the discharge duration does not terminate prematurely. To fully optimize current profile control and to test MST operational limits, a PPS is also needed for the Bp circuit. Currently in prototype stage, the Bp PPS will feature a number of innovations to increase its flexibility and performance. Isolated charging, control, and monitor systems will eliminate charging relays, reduce coupling between modules, and minimize capacitor heating. Seven-level pulse width modulation will reduce output ripple and switching losses. Solid state shorting bars will eliminate shorting relays and minimize wiring. A balanced switching algorithm will minimize capacitive noise generation. Work supported by U. S. D. o. E.

Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

NASA Astrophysics Data System (ADS)

Kurebayashi, Daichi; Nomura, Kentaro

2016-10-01

We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

Engineering dynamical control of cell fate switching using synthetic phospho-regulons

PubMed Central

Gordley, Russell M.; Williams, Reid E.; Bashor, Caleb J.; Toettcher, Jared E.; Yan, Shude; Lim, Wendell A.

2016-01-01

Many cells can sense and respond to time-varying stimuli, selectively triggering changes in cell fate only in response to inputs of a particular duration or frequency. A common motif in dynamically controlled cells is a dual-timescale regulatory network: although long-term fate decisions are ultimately controlled by a slow-timescale switch (e.g., gene expression), input signals are first processed by a fast-timescale signaling layer, which is hypothesized to filter what dynamic information is efficiently relayed downstream. Directly testing the design principles of how dual-timescale circuits control dynamic sensing, however, has been challenging, because most synthetic biology methods have focused solely on rewiring transcriptional circuits, which operate at a single slow timescale. Here, we report the development of a modular approach for flexibly engineering phosphorylation circuits using designed phospho-regulon motifs. By then linking rapid phospho-feedback with slower downstream transcription-based bistable switches, we can construct synthetic dual-timescale circuits in yeast in which the triggering dynamics and the end-state properties of the ON state can be selectively tuned. These phospho-regulon tools thus open up the possibility to engineer cells with customized dynamical control. PMID:27821768

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Hang, E-mail: hangchen@mit.edu; Thill, Peter; Cao, Jianshu

In biochemical systems, intrinsic noise may drive the system switch from one stable state to another. We investigate how kinetic switching between stable states in a bistable network is influenced by dynamic disorder, i.e., fluctuations in the rate coefficients. Using the geometric minimum action method, we first investigate the optimal transition paths and the corresponding minimum actions based on a genetic toggle switch model in which reaction coefficients draw from a discrete probability distribution. For the continuous probability distribution of the rate coefficient, we then consider two models of dynamic disorder in which reaction coefficients undergo different stochastic processes withmore » the same stationary distribution. In one, the kinetic parameters follow a discrete Markov process and in the other they follow continuous Langevin dynamics. We find that regulation of the parameters modulating the dynamic disorder, as has been demonstrated to occur through allosteric control in bistable networks in the immune system, can be crucial in shaping the statistics of optimal transition paths, transition probabilities, and the stationary probability distribution of the network.« less

Pulsed laser triggered high speed microfluidic switch

NASA Astrophysics Data System (ADS)

Wu, Ting-Hsiang; Gao, Lanyu; Chen, Yue; Wei, Kenneth; Chiou, Pei-Yu

2008-10-01

We report a high-speed microfluidic switch capable of achieving a switching time of 10 μs. The switching mechanism is realized by exciting dynamic vapor bubbles with focused laser pulses in a microfluidic polydimethylsiloxane (PDMS) channel. The bubble expansion deforms the elastic PDMS channel wall and squeezes the adjacent sample channel to control its fluid and particle flows as captured by the time-resolved imaging system. A switching of polystyrene microspheres in a Y-shaped channel has also been demonstrated. This ultrafast laser triggered switching mechanism has the potential to advance the sorting speed of state-of-the-art microscale fluorescence activated cell sorting devices.

Molecular Dynamics of Flexible Polar Cations in a Variable Confined Space: Toward Exceptional Two-Step Nonlinear Optical Switches.

PubMed

Xu, Wei-Jian; He, Chun-Ting; Ji, Cheng-Min; Chen, Shao-Li; Huang, Rui-Kang; Lin, Rui-Biao; Xue, Wei; Luo, Jun-Hua; Zhang, Wei-Xiong; Chen, Xiao-Ming

2016-07-01

The changeable molecular dynamics of flexible polar cations in the variable confined space between inorganic chains brings about a new type of two-step nonlinear optical (NLO) switch with genuine "off-on-off" second harmonic generation (SHG) conversion between one NLO-active state and two NLO-inactive states. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanism of the Exchange Reaction in HRAS from Multiscale Modeling

PubMed Central

Kapoor, Abhijeet; Travesset, Alex

2014-01-01

HRAS regulates cell growth promoting signaling processes by cycling between active (GTP-bound) and inactive (GDP-bound) states. Understanding the transition mechanism is central for the design of small molecules to inhibit the formation of RAS-driven tumors. Using a multiscale approach involving coarse-grained (CG) simulations, all-atom classical molecular dynamics (CMD; total of 3.02 µs), and steered molecular dynamics (SMD) in combination with Principal Component Analysis (PCA), we identified the structural features that determine the nucleotide (GDP) exchange reaction. We show that weakening the coupling between the SwitchI (residues 25–40) and SwitchII (residues 59–75) accelerates the opening of SwitchI; however, an open conformation of SwitchI is unstable in the absence of guanine nucleotide exchange factors (GEFs) and rises up towards the bound nucleotide to close the nucleotide pocket. Both I21 and Y32, play a crucial role in SwitchI transition. We show that an open SwitchI conformation is not necessary for GDP destabilization but is required for GDP/Mg escape from the HRAS. Further, we present the first simulation study showing displacement of GDP/Mg away from the nucleotide pocket. Both SwitchI and SwitchII, delays the escape of displaced GDP/Mg in the absence of GEF. Based on these results, a model for the mechanism of GEF in accelerating the exchange process is hypothesized. PMID:25272152

Turbulence studies with means of reflectometry at TEXTOR

NASA Astrophysics Data System (ADS)

Krämer-Flecken, A.; Dreval, V.; Soldatov, S.; Rogister, A.; Vershkov, V.; TEXTOR-team

2004-11-01

At TEXTOR, an O-mode heterodyne reflectometer system is installed and operated for the measurement of plasma density fluctuations and turbulence investigations. With two antenna arrays in the equatorial and top positions having two and three horn antennae, respectively, poloidal correlations are investigated under different plasma scenarios. From the amplitude, cross-phase and coherency spectrum, differences in the ohmic and auxiliary heated discharges are investigated. Furthermore the dynamic behaviour of the turbulence is studied in the SOC-IOC transition and in the precursor phase of a disruption. For the latter an increased integrated power spectral density was observed at the X-point of the mode compared with the O-point. Stationary m = 2 mode activity is observed for the first time at TEXTOR by reflectometry. The fluctuation level is calculated for different conditions and rises significantly increasing heating power which is consistent with the L-mode confinement degradation. Correlation measurements yield the measured phase delays which are used to calculate the poloidal phase velocity perpendicular to the magnetic field. In ohmic plasmas the turbulence rotates like a 'rigid body' with constant angular velocity inside the q = 2 surface. The rigid body rotation is broken up during tangential neutral beam injection. From the deduced poloidal wavenumber of the turbulence, most likely ion temperature gradient modes are the driving mechanism of the turbulence.

Anomalous Ion Heating, Intrinsic and Induced Rotation in the Pegasus Toroidal Experiment

NASA Astrophysics Data System (ADS)

Burke, M. G.; Barr, J. L.; Bongard, M. W.; Fonck, R. J.; Hinson, E. T.; Perry, J. M.; Redd, A. J.; Thome, K. E.

2014-10-01

Pegasus plasmas are initiated through either standard, MHD stable, inductive current drive or non-solenoidal local helicity injection (LHI) current drive with strong reconnection activity, providing a rich environment to study ion dynamics. During LHI discharges, a large amount of anomalous impurity ion heating has been observed, with Ti ~ 800 eV but Te < 100 eV. The ion heating is hypothesized to be a result of large-scale magnetic reconnection activity, as the amount of heating scales with increasing fluctuation amplitude of the dominant, edge localized, n = 1 MHD mode. Chordal Ti spatial profiles indicate centrally peaked temperatures, suggesting a region of good confinement near the plasma core surrounded by a stochastic region. LHI plasmas are observed to rotate, perhaps due to an inward radial current generated by the stochastization of the plasma edge by the injected current streams. H-mode plasmas are initiated using a combination of high-field side fueling and Ohmic current drive. This regime shows a significant increase in rotation shear compared to L-mode plasmas. In addition, these plasmas have been observed to rotate in the counter-Ip direction without any external momentum sources. The intrinsic rotation direction is consistent with predictions from the saturated Ohmic confinement regime. Work supported by US DOE Grant DE-FG02-96ER54375.

Development of the striation and filament form of the electrothermal instability

NASA Astrophysics Data System (ADS)

Yu, Edmund; Awe, T. J.; Yelton, W. G.; McKenzie, B. B.; Peterson, K. J.; Bauer, B. S.; Hutchinson, T. M.; Fuelling, S.; Yates, K. C.; Shipley, G.

2017-10-01

Magnetically imploded liners have broad application to ICF, dynamic material property studies, and flux compression. An important consideration in liner performance is the electrothermal instability (ETI), an Ohmic heating instability that manifests in 2 ways: assuming vertical current flow, ETI forms hot, horizontal bands (striations) in metals, and vertical filaments in plasmas. Striations are especially relevant in that they can develop into density perturbations, which then couple to the dangerous magneto Rayleigh-Taylor (MRT) instability during liner acceleration. Recent visible emission images of Ohmically heated rods show evidence of both the striation and filament form of ETI, suggesting several questions: (1) can simulation qualitatively reproduce the data? (2) If so, what seeds the striation ETI, and how does it transition to filaments? (3) Does the striation develop into a strong density perturbation, important for MRT? In this work, we use analytic theory and 3D MHD simulation to study how isolated resistive inclusions, embedded in a perfectly smooth rod and communicating through current redistribution, can be used to address the above questions. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. DOE NNSA under contract DE-NA0003525.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

NASA Astrophysics Data System (ADS)

Pandey, Shivendra Kumar; Manivannan, Anbarasu

2017-07-01

Prefixing a weak electric field (incubation) might enhance the crystallization speed via pre-structural ordering and thereby achieving faster programming of phase change memory (PCM) devices. We employed a weak electric field, equivalent to a constant small voltage (that is incubation voltage, Vi of 0.3 V) to the applied voltage pulse, VA (main pulse) for a systematic understanding of voltage-dependent rapid threshold switching characteristics and crystallization (set) process of In3SbTe2 (IST) PCM devices. Our experimental results on incubation-assisted switching elucidate strikingly one order faster threshold switching, with an extremely small delay time, td of 300 ps, as compared with no incubation voltage (Vi = 0 V) for the same VA. Also, the voltage dependent characteristics of incubation-assisted switching dynamics confirm that the initiation of threshold switching occurs at a lower voltage of 0.82 times of VA. Furthermore, we demonstrate an incubation assisted ultrafast set process of IST device for a low VA of 1.7 V (˜18 % lesser compared to without incubation) within a short pulse-width of 1.5 ns (full width half maximum, FWHM). These findings of ultrafast switching, yet low power set process would immensely be helpful towards designing high speed PCM devices with low power operation.

Parallel Algorithms for Switching Edges in Heterogeneous Graphs.

PubMed

Bhuiyan, Hasanuzzaman; Khan, Maleq; Chen, Jiangzhuo; Marathe, Madhav

2017-06-01

An edge switch is an operation on a graph (or network) where two edges are selected randomly and one of their end vertices are swapped with each other. Edge switch operations have important applications in graph theory and network analysis, such as in generating random networks with a given degree sequence, modeling and analyzing dynamic networks, and in studying various dynamic phenomena over a network. The recent growth of real-world networks motivates the need for efficient parallel algorithms. The dependencies among successive edge switch operations and the requirement to keep the graph simple (i.e., no self-loops or parallel edges) as the edges are switched lead to significant challenges in designing a parallel algorithm. Addressing these challenges requires complex synchronization and communication among the processors leading to difficulties in achieving a good speedup by parallelization. In this paper, we present distributed memory parallel algorithms for switching edges in massive networks. These algorithms provide good speedup and scale well to a large number of processors. A harmonic mean speedup of 73.25 is achieved on eight different networks with 1024 processors. One of the steps in our edge switch algorithms requires the computation of multinomial random variables in parallel. This paper presents the first non-trivial parallel algorithm for the problem, achieving a speedup of 925 using 1024 processors.

Parallel Algorithms for Switching Edges in Heterogeneous Graphs☆

PubMed Central

Khan, Maleq; Chen, Jiangzhuo; Marathe, Madhav

2017-01-01

An edge switch is an operation on a graph (or network) where two edges are selected randomly and one of their end vertices are swapped with each other. Edge switch operations have important applications in graph theory and network analysis, such as in generating random networks with a given degree sequence, modeling and analyzing dynamic networks, and in studying various dynamic phenomena over a network. The recent growth of real-world networks motivates the need for efficient parallel algorithms. The dependencies among successive edge switch operations and the requirement to keep the graph simple (i.e., no self-loops or parallel edges) as the edges are switched lead to significant challenges in designing a parallel algorithm. Addressing these challenges requires complex synchronization and communication among the processors leading to difficulties in achieving a good speedup by parallelization. In this paper, we present distributed memory parallel algorithms for switching edges in massive networks. These algorithms provide good speedup and scale well to a large number of processors. A harmonic mean speedup of 73.25 is achieved on eight different networks with 1024 processors. One of the steps in our edge switch algorithms requires the computation of multinomial random variables in parallel. This paper presents the first non-trivial parallel algorithm for the problem, achieving a speedup of 925 using 1024 processors. PMID:28757680

Switching control of an R/C hovercraft: stabilization and smooth switching.

PubMed

Tanaka, K; Iwasaki, M; Wang, H O

2001-01-01

This paper presents stable switching control of an radio-controlled (R/C) hovercraft that is a nonholonomic (nonlinear) system. To exactly represent its nonlinear dynamics, more importantly, to maintain controllability of the system, we newly propose a switching fuzzy model that has locally Takagi-Sugeno (T-S) fuzzy models and switches them according to states, external variables, and/or time. A switching fuzzy controller is constructed by mirroring the rule structure of the switching fuzzy model of an R/C hovercraft. We derive linear matrix inequality (LMI) conditions for ensuring the stability of the closed-loop system consisting of a switching fuzzy model and controller. Furthermore, to guarantee smooth switching of control input at switching boundaries, we also derive a smooth switching condition represented in terms of LMIs. A stable switching fuzzy controller satisfying the smooth switching condition is designed by simultaneously solving both of the LMIs. The simulation and experimental results for the trajectory control of an R/C hovercraft show the validity of the switching fuzzy model and controller design, particularly, the smooth switching condition.

Light induced kickoff of magnetic domain walls in Ising chains

NASA Astrophysics Data System (ADS)

Bogani, Lapo

2012-02-01

Controlling the speed at which systems evolve is a challenge shared by all disciplines, and otherwise unrelated areas use common theoretical frameworks towards this goal. A particularly widespread model is Glauber dynamics, which describes the time evolution of the Ising model and can be applied to any binary system. Here we show, using molecular nanowires under irradiation, that Glauber dynamics can be controlled by a novel domain-wall kickoff mechanism. Contrary to known processes, the kickoff has unambiguous fingerprints, slowing down the spin-flip attempt rate by several orders of magnitude, and following a scaling law. The required irradiation power is very low, a substantial improvement over present methods of magnetooptical switching: in our experimental demonstration we switched molecular nanowires with light, using powers thousands of times lower than in previous optical switching methods. This manipulation of stochastic dynamic processes is extremely clean, leading to fingerprint signatures and scaling laws. These observations can be used, in material science, to better study domain-wall displacements and solitons in discrete lattices. These results provide a new way to control and study stochastic dynamic processes. Being general for Glauber dynamics, they can be extended to different kinds of magnetic nanowires and to a myriad of fields, ranging from social evolution to neural networks and chemical reactivity. For nanoelectronics and molecular spintronics the kickoff affords external control of molecular spin-valves and a magnetic fingerprint in single molecule measurements. It can also be applied to the dynamics of mechanical switches and the related study of phasons and order-disorder transitions.

Preliminary measurements of neutrons from the D-D reaction in the COMPASS tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dankowski, J., E-mail: jan.dankowski@ifj.edu.pl; Kurowski, A.; Twarog, D.

Recent results of measured fast neutrons created in the D-D reaction on the COMPASS tokamak during ohmic discharges are presented in this paper. Two different type detectors were used during experiment. He-3 detectors and bubble detectors as a support. The measurements are an introduction for neutron diagnostic on tokamak COMPASS and monitoring neutrons during discharges with Neutral Beam Injection (NBI). The He-3 counters and bubble detectors were located in two positions near tokamak vacuum chamber at a distance less than 40 cm to the centre of plasma. The neutrons flux was observed in ohmic discharges. However, analysis of our resultsmore » does not indicate any clear source of neutrons production during ohmic discharges.« less

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Hannaman, David J.

1987-01-01

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Molecular switches and motors on surfaces.

PubMed

Pathem, Bala Krishna; Claridge, Shelley A; Zheng, Yue Bing; Weiss, Paul S

2013-01-01

Molecular switches and motors respond structurally, electronically, optically, and/or mechanically to external stimuli, testing and potentially enabling extreme miniaturization of optoelectronic devices, nanoelectromechanical systems, and medical devices. The assembly of motors and switches on surfaces makes it possible both to measure the properties of individual molecules as they relate to their environment and to couple function between assembled molecules. In this review, we discuss recent progress in assembling molecular switches and motors on surfaces, measuring static and dynamic structures, understanding switching mechanisms, and constructing functional molecular materials and devices. As demonstrative examples, we choose a representative molecule from three commonly studied classes including molecular switches, photochromic molecules, and mechanically interlocked molecules. We conclude by offering perspectives on the future of molecular switches and motors on surfaces.

Simulating the room-temperature dynamic motion of a ferromagnetic vortex in a bistable potential

NASA Astrophysics Data System (ADS)

Haber, E.; Badea, R.; Berezovsky, J.

2018-05-01

The ability to precisely and reliably control the dynamics of ferromagnetic (FM) vortices could lead to novel nonvolatile memory devices and logic gates. Intrinsic and fabricated defects in the FM material can pin vortices and complicate the dynamics. Here, we simulated switching a vortex between bistable pinning sites using magnetic field pulses. The dynamic motion was modeled with the Thiele equation for a massless, rigid vortex subject to room-temperature thermal noise. The dynamics were explored both when the system was at zero temperature and at room-temperature. The probability of switching for different pulses was calculated, and the major features are explained using the basins of attraction map of the two pinning sites.

Phenotypic switching of populations of cells in a stochastic environment

NASA Astrophysics Data System (ADS)

Hufton, Peter G.; Lin, Yen Ting; Galla, Tobias

2018-02-01

In biology phenotypic switching is a common bet-hedging strategy in the face of uncertain environmental conditions. Existing mathematical models often focus on periodically changing environments to determine the optimal phenotypic response. We focus on the case in which the environment switches randomly between discrete states. Starting from an individual-based model we derive stochastic differential equations to describe the dynamics, and obtain analytical expressions for the mean instantaneous growth rates based on the theory of piecewise-deterministic Markov processes. We show that optimal phenotypic responses are non-trivial for slow and intermediate environmental processes, and systematically compare the cases of periodic and random environments. The best response to random switching is more likely to be heterogeneity than in the case of deterministic periodic environments, net growth rates tend to be higher under stochastic environmental dynamics. The combined system of environment and population of cells can be interpreted as host-pathogen interaction, in which the host tries to choose environmental switching so as to minimise growth of the pathogen, and in which the pathogen employs a phenotypic switching optimised to increase its growth rate. We discuss the existence of Nash-like mutual best-response scenarios for such host-pathogen games.

Measurement of resistance switching dynamics in copper sulfide memristor structures

NASA Astrophysics Data System (ADS)

McCreery, Kaitlin; Olson, Matthew; Teitsworth, Stephen

Resistance switching materials are the subject of current research in large part for their potential to enable novel computing devices and architectures such as resistance random access memories and neuromorphic chips. A common feature of memristive structures is the hysteretic switching between high and low resistance states which is induced by the application of a sufficiently large electric field. Here, we describe a relatively simple wet chemistry process to fabricate Cu2 S / Cu memristive structures with Cu2 S film thickness ranging up to 150 micron. In this case, resistance switching is believed to be mediated by electromigration of Cu ions from the Cu substrate into the Cu2 S film. Hysteretic current-voltage curves are measured and reveal switching voltages of about 0.8 Volts with a relatively large variance and independent of film thickness. In order to gain insight into the dynamics and variability of the switching process, we have measured the time-dependent current response to voltage pulses of varying height and duration with a time resolution of 1 ns. The transient response consists of a deterministic RC component as well as stochastically varying abrupt current steps that occur within a few microseconds of the pulse application.

Lithium-ion battery cell-level control using constrained model predictive control and equivalent circuit models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xavier, MA; Trimboli, MS

This paper introduces a novel application of model predictive control (MPC) to cell-level charging of a lithium-ion battery utilizing an equivalent circuit model of battery dynamics. The approach employs a modified form of the MPC algorithm that caters for direct feed-though signals in order to model near-instantaneous battery ohmic resistance. The implementation utilizes a 2nd-order equivalent circuit discrete-time state-space model based on actual cell parameters; the control methodology is used to compute a fast charging profile that respects input, output, and state constraints. Results show that MPC is well-suited to the dynamics of the battery control problem and further suggestmore » significant performance improvements might be achieved by extending the result to electrochemical models. (C) 2015 Elsevier B.V. All rights reserved.« less

Novel control system of the high-voltage IGBT-switch

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Mamontov, Y. I.; Gusev, A. I.; Pedos, M. S.

2017-05-01

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.

Smooth invariant densities for random switching on the torus

NASA Astrophysics Data System (ADS)

Bakhtin, Yuri; Hurth, Tobias; Lawley, Sean D.; Mattingly, Jonathan C.

2018-04-01

We consider a random dynamical system obtained by switching between the flows generated by two smooth vector fields on the 2d-torus, with the random switchings happening according to a Poisson process. Assuming that the driving vector fields are transversal to each other at all points of the torus and that each of them allows for a smooth invariant density and no periodic orbits, we prove that the switched system also has a smooth invariant density, for every switching rate. Our approach is based on an integration by parts formula inspired by techniques from Malliavin calculus.

Multiple acousto-optic q-switch

DOEpatents

Deason, Vance A.

1993-01-01

An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

Multiple acousto-optic q-switch

DOEpatents

Deason, Vance A.

1993-12-07

An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

Hidden dynamics in models of discontinuity and switching

NASA Astrophysics Data System (ADS)

Jeffrey, Mike R.

2014-04-01

Sharp switches in behaviour, like impacts, stick-slip motion, or electrical relays, can be modelled by differential equations with discontinuities. A discontinuity approximates fine details of a switching process that lie beyond a bulk empirical model. The theory of piecewise-smooth dynamics describes what happens assuming we can solve the system of equations across its discontinuity. What this typically neglects is that effects which are vanishingly small outside the discontinuity can have an arbitrarily large effect at the discontinuity itself. Here we show that such behaviour can be incorporated within the standard theory through nonlinear terms, and these introduce multiple sliding modes. We show that the nonlinear terms persist in more precise models, for example when the discontinuity is smoothed out. The nonlinear sliding can be eliminated, however, if the model contains an irremovable level of unknown error, which provides a criterion for systems to obey the standard Filippov laws for sliding dynamics at a discontinuity.

Coherent Optomechanical Switch for Motion Transduction Based on Dynamically Localized Mechanical Modes

NASA Astrophysics Data System (ADS)

Fu, Hao; Gong, Zhi-cheng; Yang, Li-ping; Mao, Tian-hua; Sun, Chang-pu; Yi, Su; Li, Yong; Cao, Geng-yu

2018-05-01

We present a coherent switch for motion transduction based on dynamically localized mechanical modes in an optomechanical system consisting of two coupled cantilevers. By placing one of the cantilevers inside a harmonically oscillating optical trap, the effective coupling strength between the degenerate cantilevers can be tuned experimentally. In particular, when the coupling is turned off, we show that mechanical motion becomes tightly bounded to the isolated cantilevers rather than propagating away as a result of destructive Landau-Zener-Stückelberg-like interference. The effect of dynamical localization is adopted to implement a coherent switch, through which the tunneling oscillation is turned on and off with well-preserved phase coherence. We provide a simple yet efficient approach for full control of the coupling between mechanical resonators, which is highly desirable for coherent control of transport phenomena in a coupled-mechanical-resonator array.

Noise-constrained switching times for heteroclinic computing

NASA Astrophysics Data System (ADS)

Neves, Fabio Schittler; Voit, Maximilian; Timme, Marc

2017-03-01

Heteroclinic computing offers a novel paradigm for universal computation by collective system dynamics. In such a paradigm, input signals are encoded as complex periodic orbits approaching specific sequences of saddle states. Without inputs, the relevant states together with the heteroclinic connections between them form a network of states—the heteroclinic network. Systems of pulse-coupled oscillators or spiking neurons naturally exhibit such heteroclinic networks of saddles, thereby providing a substrate for general analog computations. Several challenges need to be resolved before it becomes possible to effectively realize heteroclinic computing in hardware. The time scales on which computations are performed crucially depend on the switching times between saddles, which in turn are jointly controlled by the system's intrinsic dynamics and the level of external and measurement noise. The nonlinear dynamics of pulse-coupled systems often strongly deviate from that of time-continuously coupled (e.g., phase-coupled) systems. The factors impacting switching times in pulse-coupled systems are still not well understood. Here we systematically investigate switching times in dependence of the levels of noise and intrinsic dissipation in the system. We specifically reveal how local responses to pulses coact with external noise. Our findings confirm that, like in time-continuous phase-coupled systems, piecewise-continuous pulse-coupled systems exhibit switching times that transiently increase exponentially with the number of switches up to some order of magnitude set by the noise level. Complementarily, we show that switching times may constitute a good predictor for the computation reliability, indicating how often an input signal must be reiterated. By characterizing switching times between two saddles in conjunction with the reliability of a computation, our results provide a first step beyond the coding of input signal identities toward a complementary coding for the intensity of those signals. The results offer insights on how future heteroclinic computing systems may operate under natural, and thus noisy, conditions.

Synchrony in Metapopulations with Sporadic Dispersal

NASA Astrophysics Data System (ADS)

Jeter, Russell; Belykh, Igor

2015-06-01

We study synchronization in ecological networks under the realistic assumption that the coupling among the patches is sporadic/stochastic and due to rare and short-term meteorological conditions. Each patch is described by a tritrophic food chain model, representing the producer, consumer, and predator. If all three species can migrate, we rigorously prove that the network can synchronize as long as the migration occurs frequently, i.e. fast compared to the period of the ecological cycle, even though the network is disconnected most of the time. In the case where only the top trophic level (i.e. the predator) can migrate, we reveal an unexpected range of intermediate switching frequencies where synchronization becomes stable in a network which switches between two nonsynchronous dynamics. As spatial synchrony increases the danger of extinction, this counterintuitive effect of synchrony emerging from slower switching dispersal can be destructive for overall metapopulation persistence, presumably expected from switching between two dynamics which are unfavorable to extinction.

Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

DOE PAGES

Ievlev, Anton V.; Morozovska, A. N.; Shur, Vladimir Ya.; ...

2015-06-19

The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction ofmore » the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.« less

Active Sensor for Microwave Tissue Imaging with Bias-Switched Arrays.

PubMed

Foroutan, Farzad; Nikolova, Natalia K

2018-05-06

A prototype of a bias-switched active sensor was developed and measured to establish the achievable dynamic range in a new generation of active arrays for microwave tissue imaging. The sensor integrates a printed slot antenna, a low-noise amplifier (LNA) and an active mixer in a single unit, which is sufficiently small to enable inter-sensor separation distance as small as 12 mm. The sensor’s input covers the bandwidth from 3 GHz to 7.5 GHz. Its output intermediate frequency (IF) is 30 MHz. The sensor is controlled by a simple bias-switching circuit, which switches ON and OFF the bias of the LNA and the mixer simultaneously. It was demonstrated experimentally that the dynamic range of the sensor, as determined by its ON and OFF states, is 109 dB and 118 dB at resolution bandwidths of 1 kHz and 100 Hz, respectively.

Adaptive Fuzzy Output Feedback Control for Switched Nonlinear Systems With Unmodeled Dynamics.

PubMed

Tong, Shaocheng; Li, Yongming

2017-02-01

This paper investigates a robust adaptive fuzzy control stabilization problem for a class of uncertain nonlinear systems with arbitrary switching signals that use an observer-based output feedback scheme. The considered switched nonlinear systems possess the unstructured uncertainties, unmodeled dynamics, and without requiring the states being available for measurement. A state observer which is independent of switching signals is designed to solve the problem of unmeasured states. Fuzzy logic systems are used to identify unknown lumped nonlinear functions so that the problem of unstructured uncertainties can be solved. By combining adaptive backstepping design principle and small-gain approach, a novel robust adaptive fuzzy output feedback stabilization control approach is developed. The stability of the closed-loop system is proved via the common Lyapunov function theory and small-gain theorem. Finally, the simulation results are given to demonstrate the validity and performance of the proposed control strategy.

H∞ control for switched fuzzy systems via dynamic output feedback: Hybrid and switched approaches

NASA Astrophysics Data System (ADS)

Xiang, Weiming; Xiao, Jian; Iqbal, Muhammad Naveed

2013-06-01

Fuzzy T-S model has been proven to be a practical and effective way to deal with the analysis and synthesis problems for complex nonlinear systems. As for switched nonlinear system, describing its subsystems as fuzzy T-S models, namely switched fuzzy system, naturally is an alternative method to conventional control approaches. In this paper, the H∞ control problem for a class of switched fuzzy systems is addressed. Hybrid and switched design approaches are proposed with different availability of switching signal information at switching instant. The hybrid control strategy includes two parts: fuzzy controllers for subsystems and state updating controller at switching instant, and the switched control strategy contains the controllers for subsystems. It is demonstrated that the conservativeness is reduced by introducing the state updating behavior but its cost is an online prediction of switching signal. Numerical examples are given to illustrate the effectiveness of proposed approaches and compare the conservativeness of two approaches.

Device and Container for Reheating and Sterilization

NASA Technical Reports Server (NTRS)

Sastry, Sudhir K.; Heskitt, Brian F.; Jun, Soojin; Marcy, Joseph E.; Mahna, Ritesh

2012-01-01

Long-duration space missions require the development of improved foods and novel packages that do not represent a significant disposal issue. In addition, it would also be desirable if rapid heating technologies could be used on Earth as well, to improve food quality during a sterilization process. For this purpose, a package equipped with electrodes was developed that will enable rapid reheating of contents via ohmic heating to serving temperature during space vehicle transit. Further, the package is designed with a resealing feature, which enables the package, once used, to contain and sterilize waste, including human waste for storage prior to jettison during a long-duration mission. Ohmic heating is a technology that has been investigated on and off for over a century. Literature indicates that foods processed by ohmic heating are of superior quality to their conventionally processed counterparts. This is due to the speed and uniformity of ohmic heating, which minimizes exposure of sensitive materials to high temperatures. In principle, the material may be heated rapidly to sterilization conditions, cooled rapidly, and stored. The ohmic heating device herein is incorporated within a package. While this by itself is not novel, a reusable feature also was developed with the intent that waste may be stored and re-sterilized within the packages. These would then serve a useful function after their use in food processing and storage. The enclosure should be designed to minimize mass (and for NASA's purposes, Equivalent System Mass, or ESM), while enabling the sterilization function. It should also be electrically insulating. For this reason, Ultem high-strength, machinable electrical insulator was used.

Analytical models of Ohmic heating and conventional heating in food processing

NASA Astrophysics Data System (ADS)

Serventi, A.; Bozzoli, F.; Rainieri, S.

2017-11-01

Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

Analysis of plasma termination in the JET hybrid scenario

NASA Astrophysics Data System (ADS)

Hobirk, J.; Bernert, M.; Buratti, P.; Challis, C. D.; Coffey, I.; Drewelow, P.; Joffrin, E.; Mailloux, J.; Nunes, I.; Pucella, G.; Pütterich, T.; de Vries, P. C.; Contributors, JET

2018-07-01

This paper analyses the final phase of hybrid scenario discharges at JET, the reduction of auxiliary heating towards finally the Ohmic phase. The here considered Ohmic phase is mostly still in the current flattop but may also be in the current ramp down. For this purpose a database is created of 54 parameters in 7 phases distributed in time of the discharge. It is found that the occurrence of a locked mode is in most cases preceded by a radiation peaking after the main heating phase either in a low power phase and/or in the Ohmic phase. To gain insight on the importance of different parameters in this process a correlation analysis to the radiation peaking in the Ohmic phase is done. The first finding is that the further away in time the analysed phases are the less the correlation is. This means in the end that a good termination scenario might also be able to terminate unhealthy plasmas safely. The second finding is that remaining impurities in the plasma after reducing the heating power in the termination phase are the most important reason for generating a locked mode which can lead to a disruption.

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation.

PubMed

Liu, Shu-Yen; Sheu, J K; Lee, M L; Lin, Yu-Chuan; Tu, S J; Huang, F W; Lai, W C

2012-03-12

In this study, we demonstrated photoelectrochemical (PEC) hydrogen generation using p-GaN photoelectrodes associated with immersed finger-type indium tin oxide (IF-ITO) ohmic contacts. The IF-ITO/p-GaN photoelectrode scheme exhibits higher photocurrent and gas generation rate compared with p-GaN photoelectrodes without IF-ITO ohmic contacts. In addition, the critical external bias for detectable hydrogen generation can be effectively reduced by the use of IF-ITO ohmic contacts. This finding can be attributed to the greatly uniform distribution of the IF-ITO/p-GaN photoelectrode applied fields over the whole working area. As a result, the collection efficiency of photo-generated holes by electrode contacts is higher than that of p-GaN photoelectrodes without IF-ITO contacts. Microscopy revealed a tiny change on the p-GaN surfaces before and after hydrogen generation. In contrast, photoelectrodes composed of n-GaN have a short lifetime due to n-GaN corrosion during hydrogen generation. Findings of this study indicate that the ITO finger contacts on p-GaN layer is a potential candidate as photoelectrodes for PEC hydrogen generation.

Influence of infrared final cooking on polycyclic aromatic hydrocarbon formation in ohmically pre-cooked beef meatballs.

PubMed

Kendirci, Perihan; Icier, Filiz; Kor, Gamze; Onogur, Tomris Altug

2014-06-01

Effects of infrared cooking on polycyclic aromatic hydrocarbon (PAH) formation in ohmically pre-cooked beef meatballs were investigated. Samples were pre-cooked in a specially designed-continuous type ohmic cooking at a voltage gradient of 15.26V/cm for 92s. Infrared cooking was applied as a final cooking method at different combinations of heat fluxes (3.706, 5.678, 8.475kW/m(2)), application distances (10.5, 13.5, 16.5cm) and application durations (4, 8, 12min). PAHs were analyzed by using high performance liquid chromatography (HPLC) equipped with a fluorescence detector. The total PAH levels were detected to be between 4.47 and 64μg/kg. Benzo[a] pyrene (B[a]P) and PAH4 (sum of B[a]P, chrysene (Chr), benzo[a]anthracene (B[a]A) and benzo[b]fluoranthene (B[b]F)) levels detected in meatballs were below the EC limits. Ohmic pre-cooking followed by infrared cooking may be regarded as a safe cooking procedure of meatballs from a PAH contamination point of view. Copyright © 2014 Elsevier Ltd. All rights reserved.

Ohmic Heating of an Electrically Conductive Food Package.

PubMed

Kanogchaipramot, Kanyawee; Tongkhao, Kullanart; Sajjaanantakul, Tanaboon; Kamonpatana, Pitiya

2016-12-01

Ohmic heating through an electrically conductive food package is a new approach to heat the food and its package as a whole after packing to avoid post-process contamination and to serve consumer needs for convenience. This process has been successfully completed using polymer film integrated with an electrically conductive film to form a conductive package. Orange juice packed in the conductive package surrounded with a conductive medium was pasteurized in an ohmic heater. A mathematical model was developed to simulate the temperature distribution within the package and its surroundings. A 3-D thermal-electric model showed heating uniformity inside the food package while the hot zone appeared in the orange juice adjacent to the conductive film. The accuracy of the model was determined by comparing the experimental results with the simulated temperature and current drawn; the model showed good agreement between the actual and simulated results. An inoculated pack study using Escherichia coli O157:H7 indicated negative growth of viable microorganisms at the target and over target lethal process temperatures, whereas the microorganism was present in the under target temperature treatment. Consequently, our developed ohmic heating system with conductive packaging offers potential for producing safe food. © 2016 Institute of Food Technologists®.

Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

PubMed

Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

2017-05-01

The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p < 0.05) larger at 0.06-0.5 kHz than at 1 kHz, and sub-lethal injury of pathogenic bacteria was reduced by decreasing frequency. MS-2 phage was inactivated more effectively at low frequency, and was more sensitive to acidic conditions than pathogenic bacteria. Electrode corrosion and quality degradation of tomato juice were not observed regardless of frequency. This study suggests that low frequency pulsed ohmic heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice. Copyright © 2016. Published by Elsevier Ltd.

State transition of a non-Ohmic damping system in a corrugated plane.

PubMed

Lü, Kun; Bao, Jing-Dong

2007-12-01

Anomalous transport of a particle subjected to non-Ohmic damping of the power delta in a tilted periodic potential is investigated via Monte Carlo simulation of the generalized Langevin equation. It is found that the system exhibits two relative motion modes: the locked state and the running state. In an environment of sub-Ohmic damping (0=2D_(eff)(delta){t(delta_eff} . Our result shows that the effective power index delta_(eff) can be enhanced and is a nonmonotonic function of the temperature and the driving force. The mixture of the two motion modes also leads to a breakdown of the hysteresis loop of the mobility.

An Energy Saving Green Plug Device for Nonlinear Loads

NASA Astrophysics Data System (ADS)

Bloul, Albe; Sharaf, Adel; El-Hawary, Mohamed

2018-03-01

The paper presents a low cost a FACTS Based flexible fuzzy logic based modulated/switched tuned arm filter and Green Plug compensation (SFC-GP) scheme for single-phase nonlinear loads ensuring both voltage stabilization and efficient energy utilization. The new Green Plug-Switched filter compensator SFC modulated LC-Filter PWM Switched Capacitive Compensation Devices is controlled using a fuzzy logic regulator to enhance power quality, improve power factor at the source and reduce switching transients and inrush current conditions as well harmonic contents in source current. The FACTS based SFC-GP Device is a member of family of Green Plug/Filters/Compensation Schemes used for efficient energy utilization, power quality enhancement and voltage/inrush current/soft starting control using a dynamic error driven fuzzy logic controller (FLC). The device with fuzzy logic controller is validated using the Matlab / Simulink Software Environment for enhanced power quality (PQ), improved power factor and reduced inrush currents. This is achieved using modulated PWM Switching of the Filter-Capacitive compensation scheme to cope with dynamic type nonlinear and inrush cyclical loads..

Adaptive switching of interaction potentials in the time domain: an extended Lagrangian approach tailored to transmute force field to QM/MM simulations and back.

PubMed

Böckmann, Marcus; Doltsinis, Nikos L; Marx, Dominik

2015-06-09

An extended Lagrangian formalism that allows for a smooth transition between two different descriptions of interactions during a molecular dynamics simulation is presented. This time-adaptive method is particularly useful in the context of multiscale simulation as it provides a sound recipe to switch on demand between different hierarchical levels of theory, for instance between ab initio ("QM") and force field ("MM") descriptions of a given (sub)system in the course of a molecular dynamics simulation. The equations of motion can be integrated straightforwardly using the usual propagators, such as the Verlet algorithm. First test cases include a bath of harmonic oscillators, of which a subset is switched to a different force constant and/or equilibrium position, as well as an all-MM to QM/MM transition in a hydrogen-bonded water dimer. The method is then applied to a smectic 8AB8 liquid crystal and is shown to be able to switch dynamically a preselected 8AB8 molecule from an all-MM to a QM/MM description which involves partition boundaries through covalent bonds. These examples show that the extended Lagrangian approach is not only easy to implement into existing code but that it is also efficient and robust. The technique moreover provides easy access to a conserved energy quantity, also in cases when Nosé-Hoover chain thermostatting is used throughout dynamical switching. A simple quadratic driving potential proves to be sufficient to guarantee a smooth transition whose time scale can be easily tuned by varying the fictitious mass parameter associated with the auxiliary variable used to extend the Lagrangian. The method is general and can be applied to time-adaptive switching on demand between two different levels of theory within the framework of hybrid scale-bridging simulations.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Terahertz beam switching by electrical control of graphene-enabled tunable metasurface.

PubMed

Zhang, Yin; Feng, Yijun; Zhao, Junming; Jiang, Tian; Zhu, Bo

2017-10-26

Controlling the terahertz wave, especially the dynamical and full control of terahertz wavefront, is highly demanded due to the increasing development of practical devices and application systems. Recently considerable efforts have been made to fill the 'terahertz gap' with the help of artificial metamaterial or metasurface incorporated with graphene material. Here, we propose a scheme to design tunable metasurface consisting of metallic patch array on a grounded polymer substrate embedded with graphene layers to electrically control the electromagnetic beam reflection at terahertz frequency. By adjusting geometric dimension of the patch elements, 360 degree reflection phase range may be achieved, thus abrupt phase shifts can be introduced along the metasurface for tailoring the reflected wavefront. Moreover, the reflective phase gradient over the metasurface can be switched between 90 and 360 degree by controlling the Fermi energy of the embedded graphene through voltage biasing, hence dynamically switching the reflective beam directions. Numerical simulations demonstrate that either single beam or dual beam dynamically switching between normal and oblique reflection angles can be well attained at working frequency. The proposed approach will bring much freedom in the design of beam manipulation devices and may be applied to terahertz radiation control.

A study on dynamic heat assisted magnetization reversal mechanisms under insufficient reversal field conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Y. J.; Yang, H. Z.; Leong, S. H.

2014-10-20

We report an experimental study on the dynamic thermomagnetic (TM) reversal mechanisms at around Curie temperature (Tc) for isolated 60 nm pitch single-domain [Co/Pd] islands heated by a 1.5 μm spot size laser pulse under an applied magnetic reversal field (Hr). Magnetic force microscopy (MFM) observations with high resolution MFM tips clearly showed randomly trapped non-switched islands within the laser irradiated spot after dynamic TM reversal process with insufficient Hr strength. This observation provides direct experimental evidence by MFM of a large magnetization switching variation due to increased thermal fluctuation/agitation over magnetization energy at the elevated temperature of around Tc. The averagemore » percentage of non-switched islands/magnetization was further found to be inversely proportional to the applied reversal field Hr for incomplete magnetization reversal when Hr is less than 13% of the island coercivity (Hc), showing an increased switching field distribution (SFD) at elevated temperature of around Tc (where main contributions to SFD broadening are from Tc distribution and stronger thermal fluctuations). Our experimental study and results provide better understanding and insight on practical heat assisted magnetic recording (HAMR) process and recording performance, including HAMR writing magnetization dynamics induced SFD as well as associated DC saturation noise that limits areal density, as were previously observed and investigated by theoretical simulations.« less

The prominent photoinduced voltage effect of as-prepared macroscopically long Ag core/Ni shell nanoheterojunctions.

PubMed

Sun, Jia-Lin; Zhao, Xingchen; Zhu, Jia-Lin

2008-02-27

Macroscopically long Ag core/Ni shell nanoheterojunctions have been well prepared by a dynamic growth approach. The structure characterized in detail by scanning electron microscopy reveals that the Ag nanowire bundles are wrapped in Ni nanoshields and form multicore coaxial cable frames. Notable photoinduced voltage with a fine repeatability, for irradiation with a laser, is exhibited compared with the case for bulk Ag pole/Ni shell heterojunctions and Ag nanowire bundle/bulk Ni heterojunctions. The prominent photoinduced voltage and the substantial metal nanoscale Ohmic interconnects provided by this kind of nanoheterojunction may have a wide range of applications in the future.

Non-Kinetic Losses Caused by Electrochemical Carbon Corrosion in PEM Fuel Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Seh Kyu; Shao, Yuyan; Viswanathan, Vilayanur V.

2012-05-01

This paper presented non-kinetic losses in PEM fuel cells under an accelerated stress test of catalyst support. The cathode with carbon-supported Pt catalyst was prepared and characterized with potential hold at 1.2 V vs. SHE in PEM fuel cells. Irreversible losses caused by carbon corrosion were evaluated using a variety of electrochemical characterizations including cyclic voltammetry, linear sweep voltammetry, electrochemical impedance spectroscopy, and polarization technique. Ohmic losses at the cathode with potential hold were determined using its capacitive responses. Concentration losses in PEM fuel cells were analyzed in terms of Tafel behavior and thin film/flooded-agglomerate dynamics.

Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

NASA Astrophysics Data System (ADS)

Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

2018-01-01

We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Non-equilibrium dynamic reversal of in-plane ferromagnetic elliptical disk

NASA Astrophysics Data System (ADS)

Kim, June-Seo; Hwang, Hee-Kyeong; You, Chun-Yeol

2018-01-01

The ultrafast switching mechanism of an in-plane magnetized elliptical magnetic disk by applying dynamic out-of-plane magnetic field pulses is investigated by performing micromagnetic simulations. For the in-plane magnetized nanostructures, the out-of-plane magnetic field is able to rotate the direction of magnetization when the precession torque overcomes the shape anisotropy of the system. This type magnetization reversal is one of non-equilibrium dynamic within a certain transition time util the precession torque is equivalent to the damping torque. By controlling the rise time or fall times of dynamic out-of-plane field pulses, the transition time can be also successively tuned and then an ultrafast switching of an elliptical magnetic nano-disk is clearly achieved by controlling the precessional torque. As another reversal approach, sinusoidal magnetic fields in gigahertz range are applied to the system. Consequently, the thresholds of switching fields are drastically decreased. We also reveal that the ferromagnetic resonance frequencies at the center and the edge of the elliptical disk are most important for microwave sinusoidal out-of-plane magnetic field induced magnetization reversal.

Analysis of reliable sub-ns spin-torque switching under transverse bias magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'Aquino, M., E-mail: daquino@uniparthenope.it; Perna, S.; Serpico, C.

2015-05-07

The switching process of a magnetic spin-valve nanosystem subject to spin-polarized current pulses is considered. The dependence of the switching probability on the current pulse duration is investigated. The further application of a transverse field along the intermediate anisotropy axis of the particle is used to control the quasi-random relaxation of magnetization to the reversed magnetization state. The critical current amplitudes to realize the switching are determined by studying the phase portrait of the Landau-Lifshtz-Slonczewski dynamics. Macrospin numerical simulations are in good agreement with the theoretical prediction and demonstrate reliable switching even for very short (below 100 ps) current pulses.

Burnout sensitivity of power MOSFETs operating in a switching converter

NASA Astrophysics Data System (ADS)

Tastet, P.; Garnier, J.; Constans, H.; Tizon, A. H.

1994-06-01

Heavy ion tests of a switching converter using power MOSFETs have allowed us to identify the main parameters which affect the burnout sensitivity of these components. The differences between static and dynamic conditions are clarified in this paper.

Direct imaging of delayed magneto-dynamic modes induced by surface acoustic waves.

PubMed

Foerster, Michael; Macià, Ferran; Statuto, Nahuel; Finizio, Simone; Hernández-Mínguez, Alberto; Lendínez, Sergi; Santos, Paulo V; Fontcuberta, Josep; Hernàndez, Joan Manel; Kläui, Mathias; Aballe, Lucia

2017-09-01

The magnetoelastic effect-the change of magnetic properties caused by the elastic deformation of a magnetic material-has been proposed as an alternative approach to magnetic fields for the low-power control of magnetization states of nanoelements since it avoids charge currents, which entail ohmic losses. Here, we have studied the effect of dynamic strain accompanying a surface acoustic wave on magnetic nanostructures in thermal equilibrium. We have developed an experimental technique based on stroboscopic X-ray microscopy that provides a pathway to the quantitative study of strain waves and magnetization at the nanoscale. We have simultaneously imaged the evolution of both strain and magnetization dynamics of nanostructures at the picosecond time scale and found that magnetization modes have a delayed response to the strain modes, adjustable by the magnetic domain configuration. Our results provide fundamental insight into magnetoelastic coupling in nanostructures and have implications for the design of strain-controlled magnetostrictive nano-devices.Understanding the effects of local dynamic strain on magnetization may help the development of magnetic devices. Foerster et al. demonstrate stroboscopic imaging that allows the observation of both strain and magnetization dynamics in nickel when surface acoustic waves are driven in the substrate.

Understanding nucleotide-regulated FtsZ filament dynamics and the monomer assembly switch with large-scale atomistic simulations.

PubMed

Ramírez-Aportela, Erney; López-Blanco, José Ramón; Andreu, José Manuel; Chacón, Pablo

2014-11-04

Bacterial cytoskeletal protein FtsZ assembles in a head-to-tail manner, forming dynamic filaments that are essential for cell division. Here, we study their dynamics using unbiased atomistic molecular simulations from representative filament crystal structures. In agreement with experimental data, we find different filament curvatures that are supported by a nucleotide-regulated hinge motion between consecutive FtsZ monomers. Whereas GTP-FtsZ filaments bend and twist in a preferred orientation, thereby burying the nucleotide, the differently curved GDP-FtsZ filaments exhibit a heterogeneous distribution of open and closed interfaces between monomers. We identify a coordinated Mg(2+) ion as the key structural element in closing the nucleotide site and stabilizing GTP filaments, whereas the loss of the contacts with loop T7 from the next monomer in GDP filaments leads to open interfaces that are more prone to depolymerization. We monitored the FtsZ monomer assembly switch, which involves opening/closing of the cleft between the C-terminal domain and the H7 helix, and observed the relaxation of isolated and filament minus-end monomers into the closed-cleft inactive conformation. This result validates the proposed switch between the low-affinity monomeric closed-cleft conformation and the active open-cleft FtsZ conformation within filaments. Finally, we observed how the antibiotic PC190723 suppresses the disassembly switch and allosterically induces closure of the intermonomer interfaces, thus stabilizing the filament. Our studies provide detailed structural and dynamic insights into modulation of both the intrinsic curvature of the FtsZ filaments and the molecular switch coupled to the high-affinity end-wise association of FtsZ monomers.

REACTOR

DOEpatents

Spitzer, L. Jr.

1962-01-01

The system conteraplates ohmically heating a gas to high temperatures such as are useful in thermonuclear reactors of the stellarator class. To this end the gas is ionized and an electric current is applied to the ionized gas ohmically to heat the gas while the ionized gas is confined to a central portion of a reaction chamber. Additionally, means are provided for pumping impurities from the gas and for further heating the gas. (AEC)

Pure silver ohmic contacts to N- and P- type gallium arsenide materials

DOEpatents

Hogan, Stephen J.

1986-01-01

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

Stacked Quantum Wire AlN/GaN HEMTs

DTIC Science & Technology

2012-04-27

Zimmermann, Debdeep Jena and Huili Xing. Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors. International Conference on...mobility transistors with regrown ohmic contacts by molecular beam epitaxy . Physica Status Solidi (a), 208(7), 1617-1619, (2011). [9] Debdeep Jena...high Si doping concentrations grown by molecular beam epitaxy . Submitted, (2012). [14] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly

Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films.

PubMed

Hu, Weijin; Wang, Zhihong; Du, Yuanmin; Zhang, Xi-Xiang; Wu, Tom

2014-11-12

We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

The evolution of resource adaptation: how generalist and specialist consumers evolve.

PubMed

Ma, Junling; Levin, Simon A

2006-07-01

Why and how specialist and generalist strategies evolve are important questions in evolutionary ecology. In this paper, with the method of adaptive dynamics and evolutionary branching, we identify conditions that select for specialist and generalist strategies. Generally, generalist strategies evolve if there is a switching benefit; specialists evolve if there is a switching cost. If the switching cost is large, specialists always evolve. If the switching cost is small, even though the consumer will first evolve toward a generalist strategy, it will eventually branch into two specialists.

Effect of biquadratic coupling on current induced magnetization switching in Co/Cu/Ni-Fe nanopillar

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aravinthan, D.; Daniel, M., E-mail: danielcnld@gmail.com; Sabareesan, P.

2016-05-23

The effect of biquadratic coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the free layer magnetization switching dynamics governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The LLGS equation is numerically solved by using Runge-Kutta fourth order procedure for an applied current density of 5 × 10{sup 12} Am{sup -2}. Presence of biquadratic coupling in the ferromagnetic layers reduces the magnetization switching time of the nanopillar device from 61 ps to 49 ps.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

A square wave is the most efficient and reliable waveform for resonant actuation of micro switches

NASA Astrophysics Data System (ADS)

Ben Sassi, S.; Khater, M. E.; Najar, F.; Abdel-Rahman, E. M.

2018-05-01

This paper investigates efficient actuation methods of shunt MEMS switches and other parallel-plate actuators. We start by formulating a multi-physics model of the micro switch, coupling the nonlinear Euler-Bernoulli beam theory with the nonlinear Reynolds equation to describe the structural and fluidic domains, respectively. The model takes into account fringing field effects as well as mid-plane stretching and squeeze film damping nonlinearities. Static analysis is undertaken using the differential quadrature method (DQM) to obtain the pull-in voltage, which is verified by means of the finite element model and validated experimentally. We develop a reduced order model employing the Galerkin method for the structural domain and DQM for the fluidic domain. The proposed waveforms are intended to be more suitable for integrated circuit standards. The dynamic response of the micro switch to harmonic, square and triangular waveforms are evaluated and compared experimentally and analytically. Low voltage actuation is obtained using dynamic pull-in with the proposed waveforms. In addition, global stability analysis carried out for the three signals shows advantages of employing the square signal as the actuation method in enhancing the performance of the micro switch in terms of actuation voltage, switching time, and sensitivity to initial conditions.

Cultural ecologies of adaptive vs. maladaptive traits: A simple nonlinear model

NASA Astrophysics Data System (ADS)

Antoci, Angelo; Russu, Paolo; Sacco, Pier Luigi

2018-05-01

In this paper, we generalize a model by Enquist and Ghirlanda [12] to analyze the "macro" dynamics of cumulative culture in a context where there is a coexistence of adaptive and maladaptive cultural traits. In particular, we introduce a different, nonlinear specification of the main processes at work in the cumulative culture dynamics: imperfect transmission of traits, generation of new traits, and switches from adaptive to maladaptive and vice-versa. We find that the system exhibits a variety of dynamic behaviors where the crucial force is the switching between the adaptive and maladaptive nature of a certain trait, with the other processes playing a modulating role. We identify in particular a number of dynamic regimes with distinctive characteristics.

BETA (Bitter Electromagnet Testing Apparatus) Design and Testing

NASA Astrophysics Data System (ADS)

Bates, Evan; Birmingham, William; Rivera, William; Romero-Talamas, Carlos

2016-10-01

BETA is a 1T water cooled Bitter-type magnetic system that has been designed and constructed at the Dusty Plasma Laboratory of the University of Maryland, Baltimore County to serve as a prototype of a scaled 10T version. Currently the system is undergoing magnetic, thermal and mechanical testing to ensure safe operating conditions and to prove analytical design optimizations. These magnets will function as experimental tools for future dusty plasma based and collaborative experiments. An overview of design methods used for building a custom made Bitter magnet with user defined experimental constraints is reviewed. The three main design methods consist of minimizing the following: ohmic power, peak conductor temperatures, and stresses induced by Lorentz forces. We will also discuss the design of BETA which includes: the magnet core, pressure vessel, cooling system, power storage bank, high powered switching system, diagnostics with safety cutoff feedback, and data acquisition (DAQ)/magnet control Matlab code. Furthermore, we present experimental data from diagnostics for validation of our analytical preliminary design methodologies and finite element analysis calculations. BETA will contribute to the knowledge necessary to finalize the 10 T magnet design.

Terahertz electron cyclotron maser interactions with an axis-encircling electron beam

NASA Astrophysics Data System (ADS)

Li, G. D.; Kao, S. H.; Chang, P. C.; Chu, K. R.

2015-04-01

To generate terahertz radiation via the electron cyclotron maser instability, harmonic interactions are essential in order to reduce the required magnetic field to a practical value. Also, high-order mode operation is required to avoid excessive Ohmic losses. The weaker harmonic interaction and mode competition associated with an over-moded structure present challenging problems to overcome. The axis-encircling electron beam is a well-known recipe for both problems. It strengthens the harmonic interaction, as well as minimizing the competing modes. Here, we examine these advantages through a broad data base obtained for a low-power, step-tunable, gyrotron oscillator. Linear results indicate far more higher-harmonic modes can be excited with an axis-encircling electron beam than with an off-axis electron beam. However, multi-mode, time-dependent simulations reveal an intrinsic tendency for a higher-harmonic mode to switch over to a lower-harmonic mode at a high beam current or upon a rapid current rise. Methods are presented to identify the narrow windows in the parameter space for stable harmonic interactions.

Graphene films printable on flexible substrates for sensor applications

NASA Astrophysics Data System (ADS)

Banerjee, Indrani; Faris, Tsegie; Stoeva, Zlatka; Harris, Paul G.; Chen, J.; Sharma, Ashwani K.; Ray, Asim K.

2017-03-01

Fifteen-layered graphene films have been successfully deposited onto flexible substrates using a commercial ink consisting of graphene particles dispersed in an acrylic polymer binder. A value of 74.9× {10}5 {{{cm}}}-2 was obtained for the density of defects, primarily located at the flake edges, from the ratio of the D and G Raman peaks located at 1345 {{{cm}}}-1 and 1575 {{{cm}}}-1 respectively. 0.5 {μ }{{m}} thick drop-cast films on interdigitated silver electrodes exhibited Ohmic conduction with a small activation energy of 12 meV over the temperature range from 260 to 330 {{K}}. The photo-thermoelectric effect is believed to be responsible for photoconduction through graphene films under illumination intensity of 10 mW m-2 at 270 {{nm}}, corresponding to the UV absorption peak. The photo-transient decay at the bias of 1 {{V}} involves two relaxation processes when the illumination is switched off and values of 8.9× {10}3 and 4.3× {10}4 {{s}} are found for the relaxation time constant using the Kohlrauch stretched exponential function analysis.

Spontaneous mode switching in coupled oscillators competing for constant amounts of resources

NASA Astrophysics Data System (ADS)

Hirata, Yoshito; Aono, Masashi; Hara, Masahiko; Aihara, Kazuyuki

2010-03-01

We propose a widely applicable scheme of coupling that models competitions among dynamical systems for fixed amounts of resources. Two oscillators coupled in this way synchronize in antiphase. Three oscillators coupled circularly show a number of oscillation modes such as rotation and partially in-phase synchronization. Intriguingly, simple oscillators in the model also produce complex behavior such as spontaneous switching among different modes. The dynamics reproduces well the spatiotemporal oscillatory behavior of a true slime mold Physarum, which is capable of computational optimization.

Investigation of optimum ohmic heating conditions for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in apple juice.

PubMed

Park, Il-Kyu; Ha, Jae-Won; Kang, Dong-Hyun

2017-05-19

Control of foodborne pathogens is an important issue for the fruit juice industry and ohmic heating treatment has been considered as one of the promising antimicrobial interventions. However, to date, evaluation of the relationship between inactivation of foodborne pathogens and system performance efficiency based on differing soluble solids content of apple juice during ohmic heating treatment has not been well studied. This study aims to investigate effective voltage gradients of an ohmic heating system and corresponding sugar concentrations (°Brix) of apple juice for inactivating major foodborne pathogens (E. coli O157:H7, S. Typhimurium, and L. monocytogenes) while maintaining higher system performance efficiency. Voltage gradients of 30, 40, 50, and 60 V/cm were applied to 72, 48, 36, 24, and 18 °Brix apple juices. At all voltage levels, the lowest heating rate was observed in 72 °Brix apple juice and a similar pattern of temperature increase was shown in18-48 °Brix juice samples. System performance coefficients (SPC) under two treatment conditions (30 V/cm in 36 °Brix or 60 V/cm in 48 °Brix juice) were relatively greater than for other combinations. Meanwhile, 5-log reductions of the three foodborne pathogens were achieved after treatment for 60 s in 36 °Brix at 30 V/cm, but this same reduction was observed in 48 °Brix juice at 60 V/cm within 20 s without affecting product quality. With respect to both bactericidal efficiency and SPC values, 60 V/cm in 48 °Brix was the most effective ohmic heating treatment combination for decontaminating apple juice concentrates.

Comparison of equilibrium ohmic and nonequilibrium swarm models for monitoring conduction electron evolution in high-altitude EMP calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric

2016-10-17

Here, atmospheric electromagnetic pulse (EMP) events are important physical phenomena that occur through both man-made and natural processes. Radiation-induced currents and voltages in EMP can couple with electrical systems, such as those found in satellites, and cause significant damage. Due to the disruptive nature of EMP, it is important to accurately predict EMP evolution and propagation with computational models. CHAP-LA (Compton High Altitude Pulse-Los Alamos) is a state-of-the-art EMP code that solves Maxwell inline images equations for gamma source-induced electromagnetic fields in the atmosphere. In EMP, low-energy, conduction electrons constitute a conduction current that limits the EMP by opposing themore » Compton current. CHAP-LA calculates the conduction current using an equilibrium ohmic model. The equilibrium model works well at low altitudes, where the electron energy equilibration time is short compared to the rise time or duration of the EMP. At high altitudes, the equilibration time increases beyond the EMP rise time and the predicted equilibrium ionization rate becomes very large. The ohmic model predicts an unphysically large production of conduction electrons which prematurely and abruptly shorts the EMP in the simulation code. An electron swarm model, which implicitly accounts for the time evolution of the conduction electron energy distribution, can be used to overcome the limitations exhibited by the equilibrium ohmic model. We have developed and validated an electron swarm model previously in Pusateri et al. (2015). Here we demonstrate EMP damping behavior caused by the ohmic model at high altitudes and show improvements on high-altitude, upward EMP modeling obtained by integrating a swarm model into CHAP-LA.« less

Effect of continuous ohmic heating to inactivate Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice.

PubMed

Lee, S-Y; Sagong, H-G; Ryu, S; Kang, D-H

2012-04-01

The purpose of this study was to investigate the efficacy of continuous ohmic heating for reducing Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice. Orange juice and tomato juice were treated with electric field strengths in the range of 25-40 V cm(-1) for different treatment times. The temperature of the samples increased with increasing treatment time and electric field strength. The rate of temperature change for tomato juice was higher than for orange juice at all voltage gradients applied. Higher electric field strength or longer treatment time resulted in a greater reduction of pathogens. Escherichia coli O157:H7 was reduced by more than 5 log after 60-, 90- and 180-s treatments in orange juice with 40, 35 and 30 V cm(-1) electric field strength, respectively. In tomato juice, treatment with 25 V cm(-1) for 30 s was sufficient to achieve a 5-log reduction in E. coli O157:H7. Similar results were observed in Salm. Typhimurium and L. monocytogenes. The concentration of vitamin C in continuous ohmic heated juice was significantly higher than in conventionally heated juice (P < 0·05). Continuous ohmic heating can be effective in killing foodborne pathogens on orange juice and tomato juice with lower degradation of quality than conventional heating. These results suggest that continuous ohmic heating might be effectively used to pasteurize fruit and vegetable juices in a short operating time and that the effect of inactivation depends on applied electric field strengths, treatment time and electric conductivity. © 2012 The Authors. Journal of Applied Microbiology © 2012 The Society for Applied Microbiology.

Comparison of equilibrium ohmic and nonequilibrium swarm models for monitoring conduction electron evolution in high-altitude EMP calculations

NASA Astrophysics Data System (ADS)

Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric; Ji, Wei

2016-10-01

Atmospheric electromagnetic pulse (EMP) events are important physical phenomena that occur through both man-made and natural processes. Radiation-induced currents and voltages in EMP can couple with electrical systems, such as those found in satellites, and cause significant damage. Due to the disruptive nature of EMP, it is important to accurately predict EMP evolution and propagation with computational models. CHAP-LA (Compton High Altitude Pulse-Los Alamos) is a state-of-the-art EMP code that solves Maxwell's equations for gamma source-induced electromagnetic fields in the atmosphere. In EMP, low-energy, conduction electrons constitute a conduction current that limits the EMP by opposing the Compton current. CHAP-LA calculates the conduction current using an equilibrium ohmic model. The equilibrium model works well at low altitudes, where the electron energy equilibration time is short compared to the rise time or duration of the EMP. At high altitudes, the equilibration time increases beyond the EMP rise time and the predicted equilibrium ionization rate becomes very large. The ohmic model predicts an unphysically large production of conduction electrons which prematurely and abruptly shorts the EMP in the simulation code. An electron swarm model, which implicitly accounts for the time evolution of the conduction electron energy distribution, can be used to overcome the limitations exhibited by the equilibrium ohmic model. We have developed and validated an electron swarm model previously in Pusateri et al. (2015). Here we demonstrate EMP damping behavior caused by the ohmic model at high altitudes and show improvements on high-altitude, upward EMP modeling obtained by integrating a swarm model into CHAP-LA.

Solvation and Evolution Dynamics of an Excess Electron in Supercritical CO2

NASA Astrophysics Data System (ADS)

Wang, Zhiping; Liu, Jinxiang; Zhang, Meng; Cukier, Robert I.; Bu, Yuxiang

2012-05-01

We present an ab initio molecular dynamics simulation of the dynamics of an excess electron solvated in supercritical CO2. The excess electron can exist in three types of states: CO2-core localized, dual-core localized, and diffuse states. All these states undergo continuous state conversions via a combination of long lasting breathing oscillations and core switching, as also characterized by highly cooperative oscillations of the excess electron volume and vertical detachment energy. All of these oscillations exhibit a strong correlation with the electron-impacted bending vibration of the core CO2, and the core-switching is controlled by thermal fluctuations.

Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghosh, Bahniman, E-mail: bghosh@utexas.edu; Dey, Rik; Register, Leonard F.

2016-07-21

In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated formore » ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.« less

The evolution of stable magnetic fields in stars: an analytical approach

NASA Astrophysics Data System (ADS)

Mestel, Leon; Moss, David

2010-07-01

The absence of a rigorous proof of the existence of dynamically stable, large-scale magnetic fields in radiative stars has been for many years a missing element in the fossil field theory for the magnetic Ap/Bp stars. Recent numerical simulations, by Braithwaite & Spruit and Braithwaite & Nordlund, have largely filled this gap, demonstrating convincingly that coherent global scale fields can survive for times of the order of the main-sequence lifetimes of A stars. These dynamically stable configurations take the form of magnetic tori, with linked poloidal and toroidal fields, that slowly rise towards the stellar surface. This paper studies a simple analytical model of such a torus, designed to elucidate the physical processes that govern its evolution. It is found that one-dimensional numerical calculations reproduce some key features of the numerical simulations, with radiative heat transfer, Archimedes' principle, Lorentz force and Ohmic decay all playing significant roles.

Nonequilibrium and nonperturbative dynamics of ultrastrong coupling in open lines.

PubMed

Peropadre, B; Zueco, D; Porras, D; García-Ripoll, J J

2013-12-13

The time and space resolved dynamics of a qubit with an Ohmic coupling to propagating 1D photons is studied, from weak coupling to the ultrastrong coupling regime. A nonperturbative study based on matrix product states shows the following results, (i) The ground state of the combined systems contains excitations of both the qubit and the surrounding bosonic field. (ii) An initially excited qubit equilibrates through spontaneous emission to a state, which under certain conditions is locally close to that ground state, both in the qubit and the field. (iii) The resonances of the combined qubit-photon system match those of the spontaneous emission process and also the predictions of the adiabatic renormalization [A. J. Leggett et al., Rev. Mod. Phys. 59, 1 (1987)]. Finally, nonperturbative ab initio calculations show that this physics can be studied using a flux qubit galvanically coupled to a superconducting transmission line.

Issues associated with modelling of proton exchange membrane fuel cell by computational fluid dynamics

NASA Astrophysics Data System (ADS)

Bednarek, Tomasz; Tsotridis, Georgios

2017-03-01

The objective of the current study is to highlight possible limitations and difficulties associated with Computational Fluid Dynamics in PEM single fuel cell modelling. It is shown that an appropriate convergence methodology should be applied for steady-state solutions, due to inherent numerical instabilities. A single channel fuel cell model has been taken as numerical example. Results are evaluated for quantitative as well qualitative points of view. The contribution to the polarization curve of the different fuel cell components such as bi-polar plates, gas diffusion layers, catalyst layers and membrane was investigated via their effects on the overpotentials. Furthermore, the potential losses corresponding to reaction kinetics, due to ohmic and mas transport limitations and the effect of the exchange current density and open circuit voltage, were also investigated. It is highlighted that the lack of reliable and robust input data is one of the issues for obtaining accurate results.

Dynamics of superconducting qubits in open transmission lines

NASA Astrophysics Data System (ADS)

Juan Jose, Garcia-Ripoll; Zueco, David; Porras, Diego; Peropadre, Borja

2014-03-01

The time and space resolved dynamics of a superconducting qubit with an Ohmic coupling to propagating 1D photons is studied, from weak coupling to the ultrastrong coupling regime (USC). A nonperturbative study based on Matrix Product States (MPS) shows the following results: (i) The ground state of the combined systems contains excitations of both the qubit and the surrounding bosonic field. (ii) An initially excited qubit equilibrates through spontaneous emission to a state, which under certain conditions, is locally close to that ground state, both in the qubit and the field. (iii) The resonances of the combined qubit-photon system match those of the spontaneous emission process and also the predictions of the adiabatic renormalisation. These results set the foundations for future studies and engineering of the interactions between superconducting qubits and propagating photons, as well as the design of photon-photon interactions based on artificial materials built from these qubits.

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Alfvén oscillations in ohmic discharges with runaway electrons in the TUMAN-3M tokamak

NASA Astrophysics Data System (ADS)

Tukachinsky, A. S.; Askinazi, L. G.; Balachenkov, I. M.; Belokurov, A. A.; Gin, D. B.; Zhubr, N. A.; Kornev, V. A.; Lebedev, S. V.; Khil'kevich, E. M.; Chugunov, I. N.; Shevelev, A. E.

2016-12-01

Studying the mechanism of Alfvén wave generation in plasma is important, since the interaction of these waves with energetic particles in tokamak-type reactors can increase the losses of energy and particles with the corresponding decrease in the efficiency of plasma heating and, under certain conditions, lead to the damage of structural elements of the system. Despite the previous detailed investigations of the excitation of Alfvén waves by superthermal particles in regimes with additional heating, the physics of Alfvén mode generation in discharges with ohmic heating of plasma is still not sufficiently studied. We have established that a significant factor inf luencing the development of Alfvén oscillations in ohmic discharge is the presence of runaway electrons. A physical mechanism explaining this relationship is proposed.

Ohmic ITBs in Alcator C-Mod

NASA Astrophysics Data System (ADS)

Rowan, William L.; Bespamyatnov, Igor O.; Fiore, C. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

2007-11-01

Internal transport barrier (ITB) plasmas can arise spontaneously in Ohmic Alcator C-Mod plasmas. The operational prescription for the ITB include formation of an EDA H-mode in a toroidal magnetic field that is ramping down and a subsequent increase in the toroidal magnetic field. Like ITBs generated with off-axis ICRF heating, these have peaked pressure profiles which can be suppressed by on-axis ICRF heating. Recent work on onset conditions for the ICRF generated ITB (K. Zhurovich, et al., To be published in Nuclear Fusion) demonstrates that the broadening of the ion temperature profile due to off-axis ICRF reduces the ion temperature gradient and suppreses the ITG instability driven particle flux as the primary mechanism for ITB formation. The object of this study is to examine the characteristics of Ohmic ITBs to find whether this model for onset is supported.

Target switching in curved human arm movements is predicted by changing a single control parameter.

PubMed

Hoffmann, Heiko

2011-01-01

Straight-line movements have been studied extensively in the human motor-control literature, but little is known about how to generate curved movements and how to adjust them in a dynamic environment. The present work studied, for the first time to my knowledge, how humans adjust curved hand movements to a target that switches location. Subjects (n = 8) sat in front of a drawing tablet and looked at a screen. They moved a cursor on a curved trajectory (spiral or oval shaped) toward a goal point. In half of the trials, this goal switched 200 ms after movement onset to either one of two alternative positions, and subjects smoothly adjusted their movements to the new goal. To explain this adjustment, we compared three computational models: a superposition of curved and minimum-jerk movements (Flash and Henis in J Cogn Neurosci 3(3):220-230, 1991), Vector Planning (Gordon et al. in Exp Brain Res 99(1):97-111, 1994) adapted to curved movements (Rescale), and a nonlinear dynamical system, which could generate arbitrarily curved smooth movements and had a point attractor at the goal. For each model, we predicted the trajectory adjustment to the target switch by changing only the goal position in the model. As result, the dynamical model could explain the observed switch behavior significantly better than the two alternative models (spiral: P = 0.0002 vs. Flash, P = 0.002 vs. Rescale; oval: P = 0.04 vs. Flash; P values obtained from Wilcoxon test on R (2) values). We conclude that generalizing arbitrary hand trajectories to new targets may be explained by switching a single control command, without the need to re-plan or re-optimize the whole movement or superimpose movements.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Economic Model Predictive Control of Bihormonal Artificial Pancreas System Based on Switching Control and Dynamic R-parameter.

PubMed

Tang, Fengna; Wang, Youqing

2017-11-01

Blood glucose (BG) regulation is a long-term task for people with diabetes. In recent years, more and more researchers have attempted to achieve automated regulation of BG using automatic control algorithms, called the artificial pancreas (AP) system. In clinical practice, it is equally important to guarantee the treatment effect and reduce the treatment costs. The main motivation of this study is to reduce the cure burden. The dynamic R-parameter economic model predictive control (R-EMPC) is chosen to regulate the delivery rates of exogenous hormones (insulin and glucagon). It uses particle swarm optimization (PSO) to optimize the economic cost function and the switching logic between insulin delivery and glucagon delivery is designed based on switching control theory. The proposed method is first tested on the standard subject; the result is compared with the switching PID and the switching MPC. The effect of the dynamic R-parameter on improving the control performance is illustrated by comparing the results of the EMPC and the R-EMPC. Finally, the robustness tests on meal change (size and timing), hormone sensitivity (insulin and glucagon), and subject variability are performed. All results show that the proposed method can improve the control performance and reduce the economic costs. The simulation results verify the effectiveness of the proposed algorithm on improving the tracking performance, enhancing robustness, and reducing economic costs. The method proposed in this study owns great worth in practical application.

Dynamics and Stability of Capillary Surfaces: Liquid Switches at Small Scales

NASA Technical Reports Server (NTRS)

Steen, Paul H.; Bhandar, Anand; Vogel, Michael J.; Hirsa, Amir H.

2004-01-01

The dynamics and stability of systems of interfaces is central to a range of technologies related to the Human Exploration and Development of Space (HEDS). Our premise is that dramatic shape changes can be manipulated to advantage with minimal input, if the system is near instability. The primary objective is to develop the science base to allow novel approaches to liquid management in low-gravity based on this premise. HEDS requires efficient, reliable and lightweight technologies. Our poster will highlight our progress toward this goal using the capillary switch as an example. A capillary surface is a liquid/liquid or liquid/gas interface whose shape is determined by surface tension. For typical liquids (e.g., water) against gas on earth, capillary surfaces occur on the millimeterscale and smaller where shape deformation due to gravity is unimportant. In low gravity, they can occur on the centimeter scale. Capillary surfaces can be combined to make a switch a system with multiple stable states. A capillary switch can generate motion or effect force. To be practical, the energy barriers of such a switch must be tunable, its switching time (kinetics) short and its triggering mechanism reliable. We illustrate these features with a capillary switch that consists of two droplets, coupled by common pressure. As long as contact lines remained pinned, motions are inviscid, even at sub-millimeter scales, with consequent promise of low-power consumption at the device level. Predictions of theory are compared to experiment on i) a soap-film prototype at centimeter scale and ii) a liquid droplet switch at millimeter-scale.

Dynamic Trial-by-Trial Recoding of Task-Set Representations in the Frontoparietal Cortex Mediates Behavioral Flexibility

PubMed Central

Qiao, Lei; Zhang, Lijie

2017-01-01

Cognitive flexibility forms the core of the extraordinary ability of humans to adapt, but the precise neural mechanisms underlying our ability to nimbly shift between task sets remain poorly understood. Recent functional magnetic resonance imaging (fMRI) studies employing multivoxel pattern analysis (MVPA) have shown that a currently relevant task set can be decoded from activity patterns in the frontoparietal cortex, but whether these regions support the dynamic transformation of task sets from trial to trial is not clear. Here, we combined a cued task-switching protocol with human (both sexes) fMRI, and harnessed representational similarity analysis (RSA) to facilitate a novel assessment of trial-by-trial changes in neural task-set representations. We first used MVPA to define task-sensitive frontoparietal and visual regions and found that neural task-set representations on switch trials are less stably encoded than on repeat trials. We then exploited RSA to show that the neural representational pattern dissimilarity across consecutive trials is greater for switch trials than for repeat trials, and that the degree of this pattern dissimilarity predicts behavior. Moreover, the overall neural pattern of representational dissimilarities followed from the assumption that repeating sets, compared with switching sets, results in stronger neural task representations. Finally, when moving from cue to target phase within a trial, pattern dissimilarities tracked the transformation from previous-trial task representations to the currently relevant set. These results provide neural evidence for the longstanding assumptions of an effortful task-set reconfiguration process hampered by task-set inertia, and they demonstrate that frontoparietal and stimulus processing regions support “dynamic adaptive coding,” flexibly representing changing task sets in a trial-by-trial fashion. SIGNIFICANCE STATEMENT Humans can fluently switch between different tasks, reflecting an ability to dynamically configure “task sets,” rule representations that link stimuli to appropriate responses. Recent studies show that neural signals in frontal and parietal brain regions can tell us which of two tasks a person is currently performing. However, it is not known whether these regions are also involved in dynamically reconfiguring task-set representations when switching between tasks. Here we measured human brain activity during task switching and tracked the similarity of neural task-set representations from trial to trial. We show that frontal and parietal brain regions flexibly recode changing task sets in a trial-by-trial fashion, and that task-set similarity over consecutive trials predicts behavior. PMID:28972126

Dissipation in graphene and nanotube resonators

NASA Astrophysics Data System (ADS)

Seoánez, C.; Guinea, F.; Castro Neto, A. H.

2007-09-01

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

DOEpatents

Hogan, S.J.

1983-03-13

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Intermittent fluctuations in the Alcator C-Mod scrape-off layer for ohmic and high confinement mode plasmas

NASA Astrophysics Data System (ADS)

Garcia, O. E.; Kube, R.; Theodorsen, A.; LaBombard, B.; Terry, J. L.

2018-05-01

Plasma fluctuations in the scrape-off layer of the Alcator C-Mod tokamak in ohmic and high confinement modes have been analyzed using gas puff imaging data. In all cases investigated, the time series of emission from a single spatially resolved view into the gas puff are dominated by large-amplitude bursts, attributed to blob-like filament structures moving radially outwards and poloidally. There is a remarkable similarity of the fluctuation statistics in ohmic plasmas and in edge localized mode-free and enhanced D-alpha high confinement mode plasmas. Conditionally averaged waveforms have a two-sided exponential shape with comparable temporal scales and asymmetry, while the burst amplitudes and the waiting times between them are exponentially distributed. The probability density functions and the frequency power spectral densities are similar for all these confinement modes. These results provide strong evidence in support of a stochastic model describing the plasma fluctuations in the scrape-off layer as a super-position of uncorrelated exponential pulses. Predictions of this model are in excellent agreement with experimental measurements in both ohmic and high confinement mode plasmas. The stochastic model thus provides a valuable tool for predicting fluctuation-induced plasma-wall interactions in magnetically confined fusion plasmas.

COUPLED EVOLUTIONS OF THE STELLAR OBLIQUITY, ORBITAL DISTANCE, AND PLANET'S RADIUS DUE TO THE OHMIC DISSIPATION INDUCED IN A DIAMAGNETIC HOT JUPITER AROUND A MAGNETIC T TAURI STAR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yu-Ling; Gu, Pin-Gao; Bodenheimer, Peter H.

We revisit the calculation of the ohmic dissipation in a hot Jupiter presented by Laine et al. by considering more realistic interior structures, stellar obliquity, and the resulting orbital evolution. In this simplified approach, the young hot Jupiter of one Jupiter mass is modeled as a diamagnetic sphere with a finite resistivity, orbiting across tilted stellar magnetic dipole fields in vacuum. Since the induced ohmic dissipation occurs mostly near the planet's surface, we find that the dissipation is unable to significantly expand the young hot Jupiter. Nevertheless, the planet inside a small corotation orbital radius can undergo orbital decay bymore » the dissipation torque and finally overfill its Roche lobe during the T Tauri star phase. The stellar obliquity can evolve significantly if the magnetic dipole is parallel/antiparallel to the stellar spin. Our results are validated by the general torque-dissipation relation in the presence of the stellar obliquity. We also run the fiducial model of Laine et al. and find that the planet's radius is sustained at a nearly constant value by the ohmic heating, rather than being thermally expanded to the Roche radius as suggested by the authors.« less

Ohmic Heating Assisted Lye Peeling of Pears.

PubMed

Gupta, Sarvesh; Sastry, Sudhir K

2018-05-01

Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

NASA Astrophysics Data System (ADS)

Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan

2018-04-01

p-GaN gate enhancement mode power transistors were processed in a Si CMOS processing line on 200 mm Si(111) substrates using Au-free metallization schemes. Si/Ti/Al/Ti/TiN ohmic contacts were formed after full recessing of the AlGaN barrier, followed by a HCl-based wet cleaning step. The electrical performance of devices aligned to the [11\\bar{2}0] and the perpendicular [1\\bar{1}00] directions was compared. The ohmic contact resistance was decreased from 1 Ω·mm for the [11\\bar{2}0] direction to 0.35 Ω·mm for the [1\\bar{1}00] direction, resulting in an increase of the drain saturation current from 0.5 to 0.6 A/mm, and a reduction of the on-resistance from 6.4 to 5.1 Ω·mm. Moreover, wafer mapping of the device characteristics over the 200 mm wafer showed a tighter statistical distribution for the [1\\bar{1}00] direction. However, by using an optimized sulfuric/ammonia peroxide (SPM/APM) cleaning step, the ohmic contact resistance could be lowered to 0.3 Ω·mm for both perpendicular directions.

Mathematical Model of Solid Food Pasteurization by Ohmic Heating: Influence of Process Parameters

PubMed Central

2014-01-01

Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product. PMID:24574874

Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

PubMed

Marra, Francesco

2014-01-01

Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

Experimental evidence for stochastic switching of supercooled phases in NdNiO3 nanostructures

NASA Astrophysics Data System (ADS)

Kumar, Devendra; Rajeev, K. P.; Alonso, J. A.

2018-03-01

A first-order phase transition is a dynamic phenomenon. In a multi-domain system, the presence of multiple domains of coexisting phases averages out the dynamical effects, making it nearly impossible to predict the exact nature of phase transition dynamics. Here, we report the metal-insulator transition in samples of sub-micrometer size NdNiO3 where the effect of averaging is minimized by restricting the number of domains under study. We observe the presence of supercooled metallic phases with supercooling of 40 K or more. The transformation from the supercooled metallic to the insulating state is a stochastic process that happens at different temperatures and times in different experimental runs. The experimental results are understood without incorporating material specific properties, suggesting that the behavior is of universal nature. The size of the sample needed to observe individual switching of supercooled domains, the degree of supercooling, and the time-temperature window of switching are expected to depend on the parameters such as quenched disorder, strain, and magnetic field.

Integrated Joule switches for the control of current dynamics in parallel superconducting strips

NASA Astrophysics Data System (ADS)

Casaburi, A.; Heath, R. M.; Cristiano, R.; Ejrnaes, M.; Zen, N.; Ohkubo, M.; Hadfield, R. H.

2018-06-01

Understanding and harnessing the physics of the dynamic current distribution in parallel superconducting strips holds the key to creating next generation sensors for single molecule and single photon detection. Non-uniformity in the current distribution in parallel superconducting strips leads to low detection efficiency and unstable operation, preventing the scale up to large area sensors. Recent studies indicate that non-uniform current distributions occurring in parallel strips can be understood and modeled in the framework of the generalized London model. Here we build on this important physical insight, investigating an innovative design with integrated superconducting-to-resistive Joule switches to break the superconducting loops between the strips and thus control the current dynamics. Employing precision low temperature nano-optical techniques, we map the uniformity of the current distribution before- and after the resistive strip switching event, confirming the effectiveness of our design. These results provide important insights for the development of next generation large area superconducting strip-based sensors.

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

NASA Astrophysics Data System (ADS)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Mapping replication dynamics in Trypanosoma brucei reveals a link with telomere transcription and antigenic variation

PubMed Central

Devlin, Rebecca; Marques, Catarina A; Paape, Daniel; Prorocic, Marko; Zurita-Leal, Andrea C; Campbell, Samantha J; Lapsley, Craig; Dickens, Nicholas; McCulloch, Richard

2016-01-01

Survival of Trypanosoma brucei depends upon switches in its protective Variant Surface Glycoprotein (VSG) coat by antigenic variation. VSG switching occurs by frequent homologous recombination, which is thought to require locus-specific initiation. Here, we show that a RecQ helicase, RECQ2, acts to repair DNA breaks, including in the telomeric site of VSG expression. Despite this, RECQ2 loss does not impair antigenic variation, but causes increased VSG switching by recombination, arguing against models for VSG switch initiation through direct generation of a DNA double strand break (DSB). Indeed, we show DSBs inefficiently direct recombination in the VSG expression site. By mapping genome replication dynamics, we reveal that the transcribed VSG expression site is the only telomeric site that is early replicating – a differential timing only seen in mammal-infective parasites. Specific association between VSG transcription and replication timing reveals a model for antigenic variation based on replication-derived DNA fragility. DOI: http://dx.doi.org/10.7554/eLife.12765.001 PMID:27228154

Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3

NASA Astrophysics Data System (ADS)

Yao, Lide; Inkinen, Sampo; van Dijken, Sebastiaan

2017-02-01

Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La2/3Sr1/3MnO3 films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migration of oxygen vacancies within the manganite film, driven by combined effects of Joule heating and bias voltage, predominantly triggers the structural and resistive transitions. Our findings open prospects for ionotronic devices based on dynamic control of physical properties in complex oxide nanostructures.

High-performance and power-efficient 2×2 optical switch on Silicon-on-Insulator.

PubMed

Han, Zheng; Moille, Grégory; Checoury, Xavier; Bourderionnet, Jérôme; Boucaud, Philippe; De Rossi, Alfredo; Combrié, Sylvain

2015-09-21

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.

Ultra-small, self-holding, optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide.

PubMed

Tanaka, Daiki; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Toyosaki, Tatsuya; Ikuma, Yuichiro; Tsuda, Hiroyuki

2012-04-23

We report a multi-mode interference-based optical gate switch using a Ge(2)Sb(2)Te(5) thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively. © 2012 Optical Society of America

Switched periodic systems in discrete time: stability and input-output norms

NASA Astrophysics Data System (ADS)

Bolzern, Paolo; Colaneri, Patrizio

2013-07-01

This paper deals with the analysis of stability and the characterisation of input-output norms for discrete-time periodic switched linear systems. Such systems consist of a network of time-periodic linear subsystems sharing the same state vector and an exogenous switching signal that triggers the jumps between the subsystems. The overall system exhibits a complex dynamic behaviour due to the interplay between the time periodicity of the subsystem parameters and the switching signal. Both arbitrary switching signals and signals satisfying a dwell-time constraint are considered. Linear matrix inequality conditions for stability and guaranteed H2 and H∞ performances are provided. The results heavily rely on the merge of the theory of linear periodic systems and recent developments on switched linear time-invariant systems.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems

NASA Astrophysics Data System (ADS)

Jeffrey, Mike R.

2015-10-01

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We show how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to "hidden" attractors inside the switching surface.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems.

PubMed

Jeffrey, Mike R

2015-10-01

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We show how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to "hidden" attractors inside the switching surface.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeffrey, Mike R., E-mail: mike.jeffrey@bristol.ac.uk

2015-10-15

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We showmore » how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to “hidden” attractors inside the switching surface.« less

Representing Sudden Shifts in Intensive Dyadic Interaction Data Using Differential Equation Models with Regime Switching.

PubMed

Chow, Sy-Miin; Ou, Lu; Ciptadi, Arridhana; Prince, Emily B; You, Dongjun; Hunter, Michael D; Rehg, James M; Rozga, Agata; Messinger, Daniel S

2018-06-01

A growing number of social scientists have turned to differential equations as a tool for capturing the dynamic interdependence among a system of variables. Current tools for fitting differential equation models do not provide a straightforward mechanism for diagnosing evidence for qualitative shifts in dynamics, nor do they provide ways of identifying the timing and possible determinants of such shifts. In this paper, we discuss regime-switching differential equation models, a novel modeling framework for representing abrupt changes in a system of differential equation models. Estimation was performed by combining the Kim filter (Kim and Nelson State-space models with regime switching: classical and Gibbs-sampling approaches with applications, MIT Press, Cambridge, 1999) and a numerical differential equation solver that can handle both ordinary and stochastic differential equations. The proposed approach was motivated by the need to represent discrete shifts in the movement dynamics of [Formula: see text] mother-infant dyads during the Strange Situation Procedure (SSP), a behavioral assessment where the infant is separated from and reunited with the mother twice. We illustrate the utility of a novel regime-switching differential equation model in representing children's tendency to exhibit shifts between the goal of staying close to their mothers and intermittent interest in moving away from their mothers to explore the room during the SSP. Results from empirical model fitting were supplemented with a Monte Carlo simulation study to evaluate the use of information criterion measures to diagnose sudden shifts in dynamics.

Optical control demonstrates switch-like PIP3 dynamics underlying the initiation of immune cell migration

PubMed Central

Karunarathne, W. K. Ajith; Giri, Lopamudra; Patel, Anilkumar K.; Venkatesh, Kareenhalli V.; Gautam, N.

2013-01-01

There is a dearth of approaches to experimentally direct cell migration by continuously varying signal input to a single cell, evoking all possible migratory responses and quantitatively monitoring the cellular and molecular response dynamics. Here we used a visual blue opsin to recruit the endogenous G-protein network that mediates immune cell migration. Specific optical inputs to this optical trigger of signaling helped steer migration in all possible directions with precision. Spectrally selective imaging was used to monitor cell-wide phosphatidylinositol (3,4,5)-triphosphate (PIP3), cytoskeletal, and cellular dynamics. A switch-like PIP3 increase at the cell front and a decrease at the back were identified, underlying the decisive migratory response. Migration was initiated at the rapidly increasing switch stage of PIP3 dynamics. This result explains how a migratory cell filters background fluctuations in the intensity of an extracellular signal but responds by initiating directionally sensitive migration to a persistent signal gradient across the cell. A two-compartment computational model incorporating a localized activator that is antagonistic to a diffusible inhibitor was able to simulate the switch-like PIP3 response. It was also able simulate the slow dissipation of PIP3 on signal termination. The ability to independently apply similar signaling inputs to single cells detected two cell populations with distinct thresholds for migration initiation. Overall the optical approach here can be applied to understand G-protein–coupled receptor network control of other cell behaviors. PMID:23569254

Optical control demonstrates switch-like PIP3 dynamics underlying the initiation of immune cell migration.

PubMed

Karunarathne, W K Ajith; Giri, Lopamudra; Patel, Anilkumar K; Venkatesh, Kareenhalli V; Gautam, N

2013-04-23

There is a dearth of approaches to experimentally direct cell migration by continuously varying signal input to a single cell, evoking all possible migratory responses and quantitatively monitoring the cellular and molecular response dynamics. Here we used a visual blue opsin to recruit the endogenous G-protein network that mediates immune cell migration. Specific optical inputs to this optical trigger of signaling helped steer migration in all possible directions with precision. Spectrally selective imaging was used to monitor cell-wide phosphatidylinositol (3,4,5)-triphosphate (PIP3), cytoskeletal, and cellular dynamics. A switch-like PIP3 increase at the cell front and a decrease at the back were identified, underlying the decisive migratory response. Migration was initiated at the rapidly increasing switch stage of PIP3 dynamics. This result explains how a migratory cell filters background fluctuations in the intensity of an extracellular signal but responds by initiating directionally sensitive migration to a persistent signal gradient across the cell. A two-compartment computational model incorporating a localized activator that is antagonistic to a diffusible inhibitor was able to simulate the switch-like PIP3 response. It was also able simulate the slow dissipation of PIP3 on signal termination. The ability to independently apply similar signaling inputs to single cells detected two cell populations with distinct thresholds for migration initiation. Overall the optical approach here can be applied to understand G-protein-coupled receptor network control of other cell behaviors.

Discrete Adjoint Sensitivity Analysis of Hybrid Dynamical Systems With Switching [Discrete Adjoint Sensitivity Analysis of Hybrid Dynamical Systems

DOE PAGES

Zhang, Hong; Abhyankar, Shrirang; Constantinescu, Emil; ...

2017-01-24

Sensitivity analysis is an important tool for describing power system dynamic behavior in response to parameter variations. It is a central component in preventive and corrective control applications. The existing approaches for sensitivity calculations, namely, finite-difference and forward sensitivity analysis, require a computational effort that increases linearly with the number of sensitivity parameters. In this paper, we investigate, implement, and test a discrete adjoint sensitivity approach whose computational effort is effectively independent of the number of sensitivity parameters. The proposed approach is highly efficient for calculating sensitivities of larger systems and is consistent, within machine precision, with the function whosemore » sensitivity we are seeking. This is an essential feature for use in optimization applications. Moreover, our approach includes a consistent treatment of systems with switching, such as dc exciters, by deriving and implementing the adjoint jump conditions that arise from state-dependent and time-dependent switchings. The accuracy and the computational efficiency of the proposed approach are demonstrated in comparison with the forward sensitivity analysis approach. In conclusion, this paper focuses primarily on the power system dynamics, but the approach is general and can be applied to hybrid dynamical systems in a broader range of fields.« less

Discrete Adjoint Sensitivity Analysis of Hybrid Dynamical Systems With Switching [Discrete Adjoint Sensitivity Analysis of Hybrid Dynamical Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hong; Abhyankar, Shrirang; Constantinescu, Emil

Sensitivity analysis is an important tool for describing power system dynamic behavior in response to parameter variations. It is a central component in preventive and corrective control applications. The existing approaches for sensitivity calculations, namely, finite-difference and forward sensitivity analysis, require a computational effort that increases linearly with the number of sensitivity parameters. In this paper, we investigate, implement, and test a discrete adjoint sensitivity approach whose computational effort is effectively independent of the number of sensitivity parameters. The proposed approach is highly efficient for calculating sensitivities of larger systems and is consistent, within machine precision, with the function whosemore » sensitivity we are seeking. This is an essential feature for use in optimization applications. Moreover, our approach includes a consistent treatment of systems with switching, such as dc exciters, by deriving and implementing the adjoint jump conditions that arise from state-dependent and time-dependent switchings. The accuracy and the computational efficiency of the proposed approach are demonstrated in comparison with the forward sensitivity analysis approach. In conclusion, this paper focuses primarily on the power system dynamics, but the approach is general and can be applied to hybrid dynamical systems in a broader range of fields.« less

Switching off hydrogen-bond-driven excitation modes in liquid methanol

DOE PAGES

Bellissima, Stefano; González, Miguel A.; Bafile, Ubaldo; ...

2017-08-30

Hydrogen bonding plays an essential role on intermolecular forces, and consequently on the thermodynamics of materials defined by this elusive bonding character. It determines the property of a vital liquid as water as well as many processes crucial for life. The longstanding controversy on the nature of the hydrogen bond (HB) can be settled by looking at the effect of a vanishing HB interaction on the microscopic properties of a given hydrogen-bonded fluid. This task suits the capabilities of computer simulations techniques, which allow to easily switch off HB interactions. We then use molecular dynamics to study the microscopic propertiesmore » of methanol, a prototypical HB liquid. Fundamental aspects of the dynamics of methanol at room temperature were contextualised only very recently and its rich dynamics was found to have striking analogies with that of water. The lower temperature (200 K) considered in the present study led us to observe that the molecular centre-of-mass dynamics is dominated by four modes. Most importantly, the computational ability to switch on and off hydrogen bonds permitted us to identify which, among these modes, have a pure HB-origin. This clarifies the role of hydrogen bonds in liquid dynamics, disclosing new research opportunities and unexplored interpretation schemes.« less

Cognitive performance in healthy older adults relates to spontaneous switching between states of functional connectivity during rest.

PubMed

Cabral, Joana; Vidaurre, Diego; Marques, Paulo; Magalhães, Ricardo; Silva Moreira, Pedro; Miguel Soares, José; Deco, Gustavo; Sousa, Nuno; Kringelbach, Morten L

2017-07-11

Growing evidence has shown that brain activity at rest slowly wanders through a repertoire of different states, where whole-brain functional connectivity (FC) temporarily settles into distinct FC patterns. Nevertheless, the functional role of resting-state activity remains unclear. Here, we investigate how the switching behavior of resting-state FC relates with cognitive performance in healthy older adults. We analyse resting-state fMRI data from 98 healthy adults previously categorized as being among the best or among the worst performers in a cohort study of >1000 subjects aged 50+ who underwent neuropsychological assessment. We use a novel approach focusing on the dominant FC pattern captured by the leading eigenvector of dynamic FC matrices. Recurrent FC patterns - or states - are detected and characterized in terms of lifetime, probability of occurrence and switching profiles. We find that poorer cognitive performance is associated with weaker FC temporal similarity together with altered switching between FC states. These results provide new evidence linking the switching dynamics of FC during rest with cognitive performance in later life, reinforcing the functional role of resting-state activity for effective cognitive processing.

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

NASA Astrophysics Data System (ADS)

Fleck, Karsten; La Torre, Camilla; Aslam, Nabeel; Hoffmann-Eifert, Susanne; Böttger, Ulrich; Menzel, Stephan

2016-12-01

Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long-term stable redox-based resistive random-access memory devices. Therefore, this work presents a detailed study of the set kinetics of valence change resistive switches on a time scale from 10 ns to 104 s , taking Pt /SrTiO3/TiN nanocrossbars as a model material. The analysis of the transient currents reveals that the switching process can be subdivided into a linear-degradation process that is followed by a thermal runaway. The comparison with a dynamical electrothermal model of the memory cell allows the deduction of the physical origin of the degradation. The origin is an electric-field-induced increase of the oxygen-vacancy concentration near the Schottky barrier of the Pt /SrTiO3 interface that is accompanied by a steadily rising local temperature due to Joule heating. The positive feedback of the temperature increase on the oxygen-vacancy mobility, and thereby on the conductivity of the filament, leads to a self-acceleration of the set process.

Dynamical modeling and experiment for an intra-cavity optical parametric oscillator pumped by a Q-switched self-mode-locking laser

NASA Astrophysics Data System (ADS)

Wang, Jing; Liu, Nianqiao; Song, Peng; Zhang, Haikun

2016-11-01

The rate-equation-based model for the Q-switched mode-locking (QML) intra-cavity OPO (IOPO) is developed, which includes the behavior of the fundamental laser. The intensity fluctuation mechanism of the fundamental laser is first introduced into the dynamics of a mode-locking OPO. In the derived model, the OPO nonlinear conversion is considered as a loss for the fundamental laser and thus the QML signal profile originates from the QML fundamental laser. The rate equations are solved by a digital computer for the case of an IOPO pumped by an electro-optic (EO) Q-switched self-mode-locking fundamental laser. The simulated results for the temporal shape with 20 kHz EO repetition and 11.25 W pump power, the signal average power, the Q-switched pulsewidth and the Q-switched pulse energy are obtained from the rate equations. The signal trace and output power from an EO QML Nd3+: GdVO4/KTA IOPO are experimentally measured. The theoretical values from the rate equations agree with the experimental results well. The developed model explains the behavior, which is helpful to system optimization.

Coactivation of cognitive control networks during task switching.

PubMed

Yin, Shouhang; Deák, Gedeon; Chen, Antao

2018-01-01

The ability to flexibly switch between tasks is considered an important component of cognitive control that involves frontal and parietal cortical areas. The present study was designed to characterize network dynamics across multiple brain regions during task switching. Functional magnetic resonance images (fMRI) were captured during a standard rule-switching task to identify switching-related brain regions. Multiregional psychophysiological interaction (PPI) analysis was used to examine effective connectivity between these regions. During switching trials, behavioral performance declined and activation of a generic cognitive control network increased. Concurrently, task-related connectivity increased within and between cingulo-opercular and fronto-parietal cognitive control networks. Notably, the left inferior frontal junction (IFJ) was most consistently coactivated with the 2 cognitive control networks. Furthermore, switching-dependent effective connectivity was negatively correlated with behavioral switch costs. The strength of effective connectivity between left IFJ and other regions in the networks predicted individual differences in switch costs. Task switching was supported by coactivated connections within cognitive control networks, with left IFJ potentially acting as a key hub between the fronto-parietal and cingulo-opercular networks. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

Comparative study of INPIStron and spark gap

NASA Technical Reports Server (NTRS)

Han, Kwang S.; Lee, Ja H.

1993-01-01

An inverse pinch plasma switch, INPIStron, was studied in comparison to a conventional spark gap. The INPIStron is under development for high power switching applications. The INPIStron has an inverse pinch dynamics, opposed to Z-pinch dynamics in the spark gap. The electrical, plasma dynamics and radiative properties of the closing plasmas have been studied. Recently the high-voltage pulse transfer capabilities or both the INPIStron and the spark gap were also compared. The INPIStron with a low impedance Z = 9 ohms transfers 87 percent of an input pulse with a halfwidth of 2 mu s. For the same input pulse the spark gap of Z = 100 ohms transfers 68 percent. Fast framing and streak photography, taken with an TRW image converter camera, was used to observe the discharge uniformity and closing plasma speed in both switches. In order to assess the effects of closing plasmas on erosion of electrode material, emission spectra of two switches were studied with a spectrometer-optical multi channel analyzer (OMA) system. The typical emission spectra of the closing plasmas in the INPIStron and the spark gap showed that there were comparatively weak carbon line emission in 658.7 nm and copper (electrode material) line emissions in the INPIStron, indicating low erosion of materials in the INPIStron.

Dynamics of short-pulse generation via spectral filtering from intensely excited gain-switched 1.55-μm distributed-feedback laser diodes.

PubMed

Chen, Shaoqiang; Yoshita, Masahiro; Sato, Aya; Ito, Takashi; Akiyama, Hidefumi; Yokoyama, Hiroyuki

2013-05-06

Picosecond-pulse-generation dynamics and pulse-width limiting factors via spectral filtering from intensely pulse-excited gain-switched 1.55-μm distributed-feedback laser diodes were studied. The spectral and temporal characteristics of the spectrally filtered pulses indicated that the short-wavelength component stems from the initial part of the gain-switched main pulse and has a nearly linear down-chirp of 5.2 ps/nm, whereas long-wavelength components include chirped pulse-lasing components and steady-state-lasing components. Rate-equation calculations with a model of linear change in refractive index with carrier density explained the major features of the experimental results. The analysis of the expected pulse widths with optimum spectral widths was also consistent with the experimental data.

Time varying moments, regime switch, and crisis warning: The birth-death process with changing transition probability

NASA Astrophysics Data System (ADS)

Tang, Yinan; Chen, Ping

2014-06-01

The sub-prime crisis in the U.S. reveals the limitation of diversification strategy based on mean-variance analysis. A regime switch and a turning point can be observed using a high moment representation and time-dependent transition probability. Up-down price movements are induced by interactions among agents, which can be described by the birth-death (BD) process. Financial instability is visible by dramatically increasing 3rd to 5th moments one-quarter before and during the crisis. The sudden rising high moments provide effective warning signals of a regime-switch or a coming crisis. The critical condition of a market breakdown can be identified from nonlinear stochastic dynamics. The master equation approach of population dynamics provides a unified theory of a calm and turbulent market.

Anisotropic Babinet-Invertible Metasurfaces to Realize Transmission-Reflection Switching for Orthogonal Polarizations of Light

NASA Astrophysics Data System (ADS)

Nakata, Yosuke; Urade, Yoshiro; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo Wada; Kitano, Masao

2016-10-01

The electromagnetic properties of an extremely thin metallic checkerboard drastically change from resonant reflection (transmission) to resonant transmission (reflection) when the local electrical conductivity at the interconnection points of the checkerboard is switched. To date, such critical transitions of metasurfaces have been applied only when they have fourfold rotational symmetry, and their application to polarization control, which requires anisotropy, has been unexplored. To overcome this applicability limitation and open up alternative pathways for dynamic deep-subwavelength polarization control by utilizing critical transitions of checkerboardlike metasurfaces, we introduce a universal class of anisotropic Babinet-invertible metasurfaces enabling transmission-reflection switching for each orthogonally polarized wave. As an application of anisotropic Babinet-invertible metasurfaces, we experimentally realize a reconfigurable terahertz polarizer whose transmitting axis can be dynamically rotated by 90°.

Fast and efficient STT switching in MTJ using additional transient pulse current

NASA Astrophysics Data System (ADS)

Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

2017-06-01

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Q-switched oscillation in thulium-doped fiber lasers using preloaded dynamic microbending technique

NASA Astrophysics Data System (ADS)

Sakata, H.; Takahashi, N.; Ushiro, Y.

2018-01-01

We demonstrate Q-switched pulse generation in thulium-doped fiber lasers by introducing piezoelectric-driven microbend with preloaded stress. We employed a pair of corrugated chips each attached on piezoelectric actuators (PAs) to clamp the fiber in a ring laser resonator. The thulium-doped fiber is pumped by a laser diode emitting at 1.63 μm and generates the Q-switched laser pulses at around 1.9 μm by switching off the PAs. The laser pulse performance is improved by optimizing the preload and switch-off period for the PAs. The Q-switched pulses with a peak power of 2.8 W and a pulsewidth of 900 ns are observed for a launched pump power of 161 mW. We expect that the in-fiber Q-switching technique will provide efficient laser systems for environmental sensing and medical applications.

Mode selecting switch using multimode interference for on-chip optical interconnects.

PubMed

Priti, Rubana B; Pishvai Bazargani, Hamed; Xiong, Yule; Liboiron-Ladouceur, Odile

2017-10-15

A novel mode selecting switch (MSS) is experimentally demonstrated for on-chip mode-division multiplexing (MDM) optical interconnects. The MSS consists of a Mach-Zehnder interferometer with tapered multi-mode interference couplers and TiN thermo-optic phase shifters for conversion and switching between the optical data encoded on the fundamental and first-order quasi-transverse electric (TE) modes. The C-band MSS exhibits a >25  dB switching extinction ratio and < -12 dB crosstalk. We validate the dynamic switching with a 25.8 kHz gating signal measuring switching times for both TE0 and TE1 modes of <10.9  μs. All channels exhibit less than 1.7 dB power penalty at a 10 -12 bit error rate, while switching the non-return-to-zero PRBS-31 data signals at 10  Gb/s.

Switching between Everyday and Scientific Language

ERIC Educational Resources Information Center

Blown, Eric J.; Bryce, Tom G. K.

2017-01-01

The research reported here investigated the everyday and scientific repertoires of children involved in semi-structured, Piagetian interviews carried out to check their understanding of dynamic astronomical concepts like daytime and night-time. It focused on the switching taking place between embedded and disembedded thinking; on the imagery which…

Ultrafast spectroscopy reveals subnanosecond peptide conformational dynamics and validates molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Spörlein, Sebastian; Carstens, Heiko; Satzger, Helmut; Renner, Christian; Behrendt, Raymond; Moroder, Luis; Tavan, Paul; Zinth, Wolfgang; Wachtveitl, Josef

2002-06-01

Femtosecond time-resolved spectroscopy on model peptides with built-in light switches combined with computer simulation of light-triggered motions offers an attractive integrated approach toward the understanding of peptide conformational dynamics. It was applied to monitor the light-induced relaxation dynamics occurring on subnanosecond time scales in a peptide that was backbone-cyclized with an azobenzene derivative as optical switch and spectroscopic probe. The femtosecond spectra permit the clear distinguishing and characterization of the subpicosecond photoisomerization of the chromophore, the subsequent dissipation of vibrational energy, and the subnanosecond conformational relaxation of the peptide. The photochemical cis/trans-isomerization of the chromophore and the resulting peptide relaxations have been simulated with molecular dynamics calculations. The calculated reaction kinetics, as monitored by the energy content of the peptide, were found to match the spectroscopic data. Thus we verify that all-atom molecular dynamics simulations can quantitatively describe the subnanosecond conformational dynamics of peptides, strengthening confidence in corresponding predictions for longer time scales.

Tree cover bimodality in savannas and forests emerging from the switching between two fire dynamics.

PubMed

De Michele, Carlo; Accatino, Francesco

2014-01-01

Moist savannas and tropical forests share the same climatic conditions and occur side by side. Experimental evidences show that the tree cover of these ecosystems exhibits a bimodal frequency distribution. This is considered as a proof of savanna-forest bistability, predicted by dynamic vegetation models based on non-linear differential equations. Here, we propose a change of perspective about the bimodality of tree cover distribution. We show, using a simple matrix model of tree dynamics, how the bimodality of tree cover can emerge from the switching between two linear dynamics of trees, one in presence and one in absence of fire, with a feedback between fire and trees. As consequence, we find that the transitions between moist savannas and tropical forests, if sharp, are not necessarily catastrophic.

Conformational switching between protein substates studied with 2D IR vibrational echo spectroscopy and molecular dynamics simulations.

PubMed

Bagchi, Sayan; Thorpe, Dayton G; Thorpe, Ian F; Voth, Gregory A; Fayer, M D

2010-12-30

Myoglobin is an important protein for the study of structure and dynamics. Three conformational substates have been identified for the carbonmonoxy form of myoglobin (MbCO). These are manifested as distinct peaks in the IR absorption spectrum of the CO stretching mode. Ultrafast 2D IR vibrational echo chemical exchange experiments are used to observed switching between two of these substates, A(1) and A(3), on a time scale of <100 ps for two mutants of wild-type Mb. The two mutants are a single mutation of Mb, L29I, and a double mutation, T67R/S92D. Molecular dynamics (MD) simulations are used to model the structural differences between the substates of the two MbCO mutants. The MD simulations are also employed to examine the substate switching in the two mutants as a test of the ability of MD simulations to predict protein dynamics correctly for a system in which there is a well-defined transition over a significant potential barrier between two substates. For one mutant, L29I, the simulations show that translation of the His64 backbone may differentiate the two substates. The simulations accurately reproduce the experimentally observed interconversion time for the L29I mutant. However, MD simulations exploring the same His64 backbone coordinate fail to display substate interconversion for the other mutant, T67R/S92D, thus pointing to the likely complexity of the underlying protein interactions. We anticipate that understanding conformational dynamics in MbCO via ultrafast 2D IR vibrational echo chemical exchange experiments can help to elucidate fast conformational switching processes in other proteins.

Cryogenic focussing, ohmically heated on-column trap

NASA Technical Reports Server (NTRS)

Springston, Stephen R.

1991-01-01

A procedure is described for depositing a conductive layer of gold on the exterior of a fused-silica capillary used in gas chromatography. By subjecting a section of the column near the inlet to a thermal cycle of cryogenic cooling and ohmic heating, volatile samples are concentrated and subsequently injected. The performance of this trap as a chromatographic injector is demonstrated. Several additional applications are suggested and the unique properties of this device are discussed.

Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

DTIC Science & Technology

2014-03-27

scale, high-frequency ZnO thin - film transistors (TFTs) could be fabricated. Molybdenum, tantalum, titanium tungsten 10-90, and tungsten metallic contact... thin - film transistor layout utilized in the thesis research . . . . . 42 3.4 Process Flow Diagram for Optical and e-Beam Devices...TFT thin - film transistor TLM transmission line model UV ultra-violet xvii SELECTIVE DRY ETCH FOR DEFINING OHMIC CONTACTS FOR HIGH PERFORMANCE ZnO TFTs

Phase change material based tunable reflectarray for free-space optical inter/intra chip interconnects.

PubMed

Zou, Longfang; Cryan, Martin; Klemm, Maciej

2014-10-06

The concept of phase change material (PCM) based optical antennas and antenna arrays is proposed for dynamic beam shaping and steering utilized in free-space optical inter/intra chip interconnects. The essence of this concept lies in the fact that the behaviour of PCM based optical antennas will change due to the different optical properties of the amorphous and crystalline state of the PCM. By engineering optical antennas or antenna arrays, it is feasible to design dynamic optical links in a desired manner. In order to illustrate this concept, a PCM based tunable reflectarray is proposed for a scenario of a dynamic optical link between a source and two receivers. The designed reflectarray is able to switch the optical link between two receivers by switching the two states of the PCM. Two types of antennas are employed in the proposed tunable reflectarray to achieve full control of the wavefront of the reflected beam. Numerical studies show the expected binary beam steering at the optical communication wavelength of 1.55 μm. This study suggests a new research area of PCM based optical antennas and antenna arrays for dynamic optical switching and routing.

A Simple and Reliable Setup for Monitoring Corrosion Rate of Steel Rebars in Concrete

PubMed Central

Jibran, Mohammed Abdul Azeem; Azad, Abul Kalam

2014-01-01

The accuracy in the measurement of the rate of corrosion of steel in concrete depends on many factors. The high resistivity of concrete makes the polarization data erroneous due to the Ohmic drop. The other source of error is the use of an arbitrarily assumed value of the Stern-Geary constant for calculating corrosion current density. This paper presents the outcomes of a research work conducted to develop a reliable and low-cost experimental setup and a simple calculation procedure that can be utilised to calculate the corrosion current density considering the Ohmic drop compensation and the actual value of the Stern-Geary constants calculated using the polarization data. The measurements conducted on specimens corroded to different levels indicate the usefulness of the developed setup to determine the corrosion current density with and without Ohmic drop compensation. PMID:24526907

Graphene in ohmic contact for both n-GaN and p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Haijian; Liu, Zhenghui; Shi, Lin

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN andmore » thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.« less

Germanium- and tellurium-doped GaAs for non-alloyed p-type and n-type ohmic contacts

NASA Astrophysics Data System (ADS)

Park, Joongseo; Barnes, Peter A.; Lovejoy, Michael L.

1995-08-01

Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for the n-type contacts. Hall measurements were carried out for the samples grown from melts in which the mole fraction of Ge was varied between 1.55 atomic % and 52.2 atomic %, while the Te mole fractions varied between 0.03% and 0.5%. Specific contact resistance, rc, as low as rcp=2.9×10-6 ohm-cm 2 for Ge doping of p=(Na-Nd)=6.0×1019 holes/cm3 was measured for p-contacts and rcn=9.6×10-5 ohm-cm2 was measured for Te doping of n=(Nd-Na)=8.9×1018 electrons/cm3 for GaAs metallized with non-alloyed contacts of Ti/Al.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Douglas, E. A.; Reza, S.; Sanchez, C.

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer

NASA Astrophysics Data System (ADS)

Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao; Xing, Yao; Zhang, Liqun; Yang, Hui; Long, Heng; Li, Mo

2017-06-01

Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis. A correlation between residual carbon and ρc indicates that incorporation of proper carbon impurity can be an advantage for Ohmic contact, although carbon can also act as a compensating donor to worsen the Ohmic contact at a very high concentration. Finally, ρc is improved to 6.80 × 10-5 Ω × cm2 with a carbon concentration of 8.3 × 1017 cm-3 in p++-GaN layer, when the growth temperature, pressure and flow rate of CP2Mg and TMGa are 940 °C, 100 Torr, 3 μmol/min and 28 μmol/min, respectively.

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

NASA Astrophysics Data System (ADS)

Guo, H.; Andagana, H. B.; Cao, X. A.

2010-05-01

Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg ~4 × 1019 cm-3) using direct-current (DC) sputter codeposition. It was found that undoped ITO con- tacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10-2 Ω cm-2 range, but were more stable above 600°C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.

Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts

DOE PAGES

Rochford, C.; Limmer, S. J.; Howell, S. W.; ...

2014-11-26

Vertically aligned, untangled planarized arrays of multiwall carbon nanotubes (MWNTs) with Ohmic back contacts were grown in nanopore templates on arbitrary substrates. The templates were prepared by sputter depositing Nd-doped Al films onto W-coated substrates, followed by anodization to form an aluminum oxide nanopore array. The W underlayer helps eliminate the aluminum oxide barrier that typically occurs at the nanopore bottoms by instead forming a thin WO 3 layer. The WO 3 can be selectively etched to enable electrodeposition of Co catalysts with control over the Co site density. This led to control of the site density of MWNTs grownmore » by thermal chemical vapor deposition, with the W also serving as a back electrical contact. As a result, Ohmic contact to MWNTs was confirmed, even following ultrasonic cutting of the entire array to a uniform height.« less

Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yue; Lu, Wu-yue; Wang, Tao

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρ{sub c}) is 1.97 × 10{sup −3} Ω·cm{sup 2}, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA,more » which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.« less

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

NASA Astrophysics Data System (ADS)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride compounds. The barrier height obtained on n GaN was ˜0-5-0.6 eV which was low compared to those obtained by Pt or Ni. This barrier height is too low for use as a gate contact and they can only have limited use, perhaps, in gas sensors where large leakage current can be tolerated in exchange for better thermal reliability. AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB2/Ti/Au source/drain ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB2/Au or Ni/TiB 2/Au) and were subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based ohmic metal and either Pt/Au, Ni/Au or Ni/TiB2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. The need for sputter deposition of the borides causes' problem in achieving significantly lower specific contact resistance than with conventional schemes deposited using e-beam evaporation. The borides also seem to be, in general, good getters for oxygen leading to sheet resistivity issues. Ir/Au Schottky contacts and Ti/Al/Ir/Au ohmic contacts on n-type GaN were investigated as a function of annealing temperature and compared to their more common Ni-based counterparts. The Ir/Au ohmic contacts on n-type GaN with n˜1017 cm-3 exhibited barrier heights of 0.55 eV after annealing at 700°C and displayed less intermixing of the contact metals compared to Ni/Au. A minimum specific contact resistance of 1.6 x 10-6 O.cm2 was obtained for the ohmic contacts on n-type GaN with n˜1018 cm-3 after annealing at 900°C. The measurement temperature dependence of contact resistance was similar for both Ti/Al/Ir/Au and Ti/Al/Ni/Au, suggesting the same transport mechanism was present in both types of contacts. The Ir-based ohmic contacts displayed superior thermal aging characteristics at 350°C. Auger Electron Spectroscopy showed that Ir is a superior diffusion barrier at these moderate temperatures than Ni.

Effect of texturing on polarization switching dynamics in ferroelectric ceramics

NASA Astrophysics Data System (ADS)

Zhukov, Sergey; Genenko, Yuri A.; Koruza, Jurij; Schultheiß, Jan; von Seggern, Heinz; Sakamoto, Wataru; Ichikawa, Hiroki; Murata, Tatsuro; Hayashi, Koichiro; Yogo, Toshinobu

2016-01-01

Highly (100),(001)-oriented (Ba0.85Ca0.15)TiO3 (BCT) lead-free piezoelectric ceramics were fabricated by the reactive templated grain growth method using a mixture of plate-like CaTiO3 and BaTiO3 particles. Piezoelectric properties of the ceramics with a high degree of texture were found to be considerably enhanced compared with the BCT ceramics with a low degree of texture. With increasing the Lotgering factor from 26% up to 94%, the piezoelectric properties develop towards the properties of a single crystal. The dynamics of polarization switching was studied over a broad time domain of 8 orders of magnitude and was found to strongly depend on the degree of orientation of the ceramics. Samples with a high degree of texture exhibited 2-3 orders of magnitude faster polarization switching, as compared with the ones with a low degree of texture. This was rationalized by means of the Inhomogeneous Field Mechanism model as a result of the narrower statistical distribution of the local electric field values in textured media, which promotes a more coherent switching process. The extracted microscopic parameters of switching revealed a decrease of the critical nucleus energy in systems with a high degree of texture providing more favorable switching conditions related to the enhanced ferroelectric properties of the textured material.

Dynamic protein assembly by programmable DNA strand displacement.

PubMed

Chen, Rebecca P; Blackstock, Daniel; Sun, Qing; Chen, Wilfred

2018-04-01

Inspired by the remarkable ability of natural protein switches to sense and respond to a wide range of environmental queues, here we report a strategy to engineer synthetic protein switches by using DNA strand displacement to dynamically organize proteins with highly diverse and complex logic gate architectures. We show that DNA strand displacement can be used to dynamically control the spatial proximity and the corresponding fluorescence resonance energy transfer between two fluorescent proteins. Performing Boolean logic operations enabled the explicit control of protein proximity using multi-input, reversible and amplification architectures. We further demonstrate the power of this technology beyond sensing by achieving dynamic control of an enzyme cascade. Finally, we establish the utility of the approach as a synthetic computing platform that drives the dynamic reconstitution of a split enzyme for targeted prodrug activation based on the sensing of cancer-specific miRNAs.

Dynamic protein assembly by programmable DNA strand displacement

NASA Astrophysics Data System (ADS)

Chen, Rebecca P.; Blackstock, Daniel; Sun, Qing; Chen, Wilfred

2018-03-01

Inspired by the remarkable ability of natural protein switches to sense and respond to a wide range of environmental queues, here we report a strategy to engineer synthetic protein switches by using DNA strand displacement to dynamically organize proteins with highly diverse and complex logic gate architectures. We show that DNA strand displacement can be used to dynamically control the spatial proximity and the corresponding fluorescence resonance energy transfer between two fluorescent proteins. Performing Boolean logic operations enabled the explicit control of protein proximity using multi-input, reversible and amplification architectures. We further demonstrate the power of this technology beyond sensing by achieving dynamic control of an enzyme cascade. Finally, we establish the utility of the approach as a synthetic computing platform that drives the dynamic reconstitution of a split enzyme for targeted prodrug activation based on the sensing of cancer-specific miRNAs.

Modelling of creep hysteresis in ferroelectrics

NASA Astrophysics Data System (ADS)

He, Xuan; Wang, Dan; Wang, Linxiang; Melnik, Roderick

2018-05-01

In the current paper, a macroscopic model is proposed to simulate the hysteretic dynamics of ferroelectric ceramics with creep phenomenon incorporated. The creep phenomenon in the hysteretic dynamics is attributed to the rate-dependent characteristic of the polarisation switching processes induced in the materials. A non-convex Helmholtz free energy based on Landau theory is proposed to model the switching dynamics. The governing equation of single-crystal model is formulated by applying the Euler-Lagrange equation. The polycrystalline model is obtained by combining the single crystal dynamics with a density function which is constructed to model the weighted contributions of different grains with different principle axis orientations. In addition, numerical simulations of hysteretic dynamics with creep phenomenon are presented. Comparison of the numerical results and their experimental counterparts is also presented. It is shown that the creep phenomenon is captured precisely, validating the capability of the proposed model in a range of its potential applications.

A heterogenous Cournot duopoly with delay dynamics: Hopf bifurcations and stability switching curves

NASA Astrophysics Data System (ADS)

Pecora, Nicolò; Sodini, Mauro

2018-05-01

This article considers a Cournot duopoly model in a continuous-time framework and analyze its dynamic behavior when the competitors are heterogeneous in determining their output decision. Specifically the model is expressed in the form of differential equations with discrete delays. The stability conditions of the unique Nash equilibrium of the system are determined and the emergence of Hopf bifurcations is shown. Applying some recent mathematical techniques (stability switching curves) and performing numerical simulations, the paper confirms how different time delays affect the stability of the economy.

Switching Dynamics and the Stress Process

ERIC Educational Resources Information Center

Cornwell, Benjamin

2013-01-01

This article shows how maintaining social relationships can be a daily hassle that has implications for the stress process, depending on how often individuals transition, or "switch," between various social roles and social settings throughout the day. I use nationally representative time-diary data on 7,662 respondents from the 2010 American Time…

Exceptional-point Dynamics in Photonic Honeycomb Lattices with PT Symmetry

DTIC Science & Technology

2012-01-17

coherent perfect laser absorber [25], spatial optical switches [26], and nonlinear switching structures [27]. Despite the wealth of results on...Petermann, IEEE J. Quantum Electron. 15, 566 (1979); A. E. Siegman , Phys. Rev. A 39, 1264 (1989). [36] M. V. Berry, J. Mod. Opt. 50, 63 (2003); S.-Y

Non-Markovian dynamics of fermionic and bosonic systems coupled to several heat baths

NASA Astrophysics Data System (ADS)

Hovhannisyan, A. A.; Sargsyan, V. V.; Adamian, G. G.; Antonenko, N. V.; Lacroix, D.

2018-03-01

Employing the fermionic and bosonic Hamiltonians for the collective oscillator linearly FC-coupled with several heat baths, the analytical expressions for the collective occupation number are derived within the non-Markovian quantum Langevin approach. The master equations for the occupation number of collective subsystem are derived and discussed. In the case of Ohmic dissipation with Lorenzian cutoffs, the possibility of reduction of the system with several heat baths to the system with one heat bath is analytically demonstrated. For the fermionic and bosonic systems, a comparative analysis is performed between the collective subsystem coupled to two heat baths and the reference case of the subsystem coupled to one bath.

Effect of heating on the suppression of tearing modes in tokamaks.

PubMed

Classen, I G J; Westerhof, E; Domier, C W; Donné, A J H; Jaspers, R J E; Luhmann, N C; Park, H K; van de Pol, M J; Spakman, G W; Jakubowski, M W

2007-01-19

The suppression of (neoclassical) tearing modes is of great importance for the success of future fusion reactors like ITER. Electron cyclotron waves can suppress islands, both by driving noninductive current in the island region and by heating the island, causing a perturbation to the Ohmic plasma current. This Letter reports on experiments on the TEXTOR tokamak, investigating the effect of heating, which is usually neglected. The unique set of tools available on TEXTOR, notably the dynamic ergodic divertor to create islands with a fully known driving term, and the electron cyclotron emission imaging diagnostic to provide detailed 2D electron temperature information, enables a detailed study of the suppression process and a comparison with theory.

Micromachined mirrors for raster-scanning displays and optical fiber switches

NASA Astrophysics Data System (ADS)

Hagelin, Paul Merritt

Micromachines and micro-optics have the potential to shrink the size and cost of free-space optical systems, enabling a new generation of high-performance, compact projection displays and telecommunications equipment. In raster-scanning displays and optical fiber switches, a free-space optical beam can interact with multiple tilt- up micromirrors fabricated on a single substrate. The size, rotation angle, and flatness of the mirror surfaces determine the number of pixels in a raster-display or ports in an optical switch. Single-chip and two-chip optical raster display systems demonstrate static mirror curvature correction, an integrated electronic driver board, and dynamic micromirror performance. Correction for curvature caused by a stress gradient in the micromirror leads to resolution of 102 by 119 pixels in the single-chip display. The optical design of the two-chip display features in-situ mirror curvature measurement and adjustable image magnification with a single output lens. An electronic driver board synchronizes modulation of the optical source with micromirror actuation for the display of images. Dynamic off-axis mirror motion is shown to have minimal influence on resolution. The confocal switch, a free-space optical fiber cross- connect, incorporates micromirrors having a design similar to the image-refresh scanner. Two micromirror arrays redirect optical beams from an input fiber array to the output fibers. The switch architecture supports simultaneous switching of multiple wavelength channels. A 2x2 switch configuration, using single-mode optical fiber at 1550 mn, is demonstrated with insertion loss of -4.2 dB and cross-talk of -50.5 dB. The micromirrors have sufficient size and angular range for scaling to a 32x32 cross-connect switch that has low insertion-loss and low cross-talk.

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Simulation and characterization of a laterally-driven inertial micro-switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Wenguo; Wang, Yang; Wang, Huiying

2015-04-15

A laterally-driven inertial micro-switch was designed and fabricated using surface micromachining technology. The dynamic response process was simulated by ANSYS software, which revealed the vibration process of movable electrode when the proof mass is shocked by acceleration in sensitive direction. The test results of fabricated inertial micro-switches with and without anti-shock beams indicated that the contact process of micro-switch with anti-shock beams is more reliable than the one without anti-shock beams. The test results indicated that three contact signals had been observed in the contact process of the inertial switch without anti-shock beams, and only one contact signal in themore » inertial switch with anti-shock beams, which demonstrated that the anti-shock beams can effectively constrain the vibration in non-sensitive direction.« less

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressuremore » and film thickness with nontrivial topology or switchable and nonswitchable regions.« less

Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

DOE PAGES

Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

2017-11-01

Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. Finally, we show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressuremore » and film thickness with nontrivial topology or switchable and nonswitchable regions.« less

Switching LPV Control for High Performance Tactical Aircraft

NASA Technical Reports Server (NTRS)

Lu, Bei; Wu, Fen; Kim, SungWan

2004-01-01

This paper examines a switching Linear Parameter-Varying (LPV) control approach to determine if it is practical to use for flight control designs within a wide angle of attack region. The approach is based on multiple parameter-dependent Lyapunov functions. The full parameter space is partitioned into overlapping subspaces and a family of LPV controllers are designed, each suitable for a specific parameter subspace. The hysteresis switching logic is used to accomplish the transition among different parameter subspaces. The proposed switching LPV control scheme is applied to an F-16 aircraft model with different actuator dynamics in low and high angle of attack regions. The nonlinear simulation results show that the aircraft performs well when switching among different angle of attack regions.

Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

NASA Astrophysics Data System (ADS)

Ebrahimpour, Zeinab; Mansour, Nastaran

2017-02-01

This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler-Nordheim (F-N) plots show the transition of the in-plane charge transport mechanism from direct tunneling to field emission in annealed films. Our results suggest that, the formation of a thin layer of Au2O3 , the proximity of the nanoparticles as well as their higher filling fraction are important parameters related with the tunneling process enhancement. The observed non-ohmic conductivity property can make these self-assembled gold nanoparticle films very useful structures in different applications such as sensing, resistors and other nanoelectronic applications.

ZnO Schottky barriers and Ohmic contacts

NASA Astrophysics Data System (ADS)

Brillson, Leonard J.; Lu, Yicheng

2011-06-01

ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts, these studies encompass the nature of metal-specific interactions, the role of annealing, multilayered contacts, alloyed contacts, metallization schemes for state-of-the-art contacts, and their application to n-type versus p-type ZnO. Both ZnO Schottky barriers and ohmic contacts show a wide range of phenomena and electronic behavior, which can all be directly tied to chemical and structural changes on an atomic scale.

MAGNETIC SCALING LAWS FOR THE ATMOSPHERES OF HOT GIANT EXOPLANETS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menou, Kristen

2012-02-01

We present scaling laws for advection, radiation, magnetic drag, and ohmic dissipation in the atmospheres of hot giant exoplanets. In the limit of weak thermal ionization, ohmic dissipation increases with the planetary equilibrium temperature (T{sub eq} {approx}> 1000 K) faster than the insolation power does, eventually reaching values {approx}> 1% of the insolation power, which may be sufficient to inflate the radii of hot Jupiters. At higher T{sub eq} values still magnetic drag rapidly brakes the atmospheric winds, which reduces the associated ohmic dissipation power. For example, for a planetary field strength B = 10 G, the fiducial scaling lawsmore » indicate that ohmic dissipation exceeds 1% of the insolation power over the equilibrium temperature range T{sub eq} {approx} 1300-2000 K, with a peak contribution at T{sub eq} {approx} 1600 K. Evidence for magnetically dragged winds at the planetary thermal photosphere could emerge in the form of reduced longitudinal offsets for the dayside infrared hotspot. This suggests the possibility of an anticorrelation between the amount of hotspot offset and the degree of radius inflation, linking the atmospheric and interior properties of hot giant exoplanets in an observationally testable way. While providing a useful framework to explore the magnetic scenario, the scaling laws also reveal strong parameter dependencies, in particular with respect to the unknown planetary magnetic field strength.« less

Trading off switch costs and stimulus availability benefits: An investigation of voluntary task-switching behavior in a predictable dynamic multitasking environment.

PubMed

Mittelstädt, Victor; Miller, Jeff; Kiesel, Andrea

2018-03-09

In the present study, we introduce a novel, self-organized task-switching paradigm that can be used to study more directly the determinants of switching. Instead of instructing participants to randomly switch between tasks, as in the classic voluntary task-switching paradigm (Arrington & Logan, 2004), we instructed participants to optimize their task performance in a voluntary task-switching environment in which the stimulus associated with the previously selected task appeared in each trial after a delay. Importantly, the stimulus onset asynchrony (SOA) increased further with each additional repetition of this task, whereas the stimulus needed for a task switch was always immediately available. We conducted two experiments with different SOA increments (i.e., Exp. 1a = 50 ms, Exp. 1b = 33 ms) to see whether this procedure would induce switching behavior, and we explored how people trade off switch costs against the increasing availability of the stimulus needed for a task repetition. We observed that participants adapted their behavior to the different task environments (i.e., SOA increments) and that participants switched tasks when the SOA in task switches approximately matched the switch costs. Moreover, correlational analyses indicated relations between individual switch costs and individual switch rates across participants. Together, these results demonstrate that participants were sensitive to the increased availability of switch stimuli in deciding whether to switch or to repeat, which in turn demonstrates flexible adaptive task selection behavior. We suggest that performance limitations in task switching interact with the task environment to influence switching behavior.

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications.

PubMed

Linn, E; Menzel, S; Ferch, S; Waser, R

2013-09-27

Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications.

Probing domain switching dynamics in ferroelectric thick films by small field e31,f piezoelectric measurement

NASA Astrophysics Data System (ADS)

Cheng, Hongbo; Ouyang, Jun; Kanno, Isaku

2017-07-01

Epitaxial Pb(Zr0.53Ti0.47)O3 films were grown on (001) Pt/(001) MgO via rf-magnetron sputtering. Switching dynamics of 90° and 180° domains under bi-polar electric fields were probed by using small-field e31 ,f measurements in which the evolution of the transverse piezoelectric response with the bias voltage represents a set of fingerprints of the evolving domain structure. Furthermore, the asymmetric e31 ,f-V curves revealed a strong built-in electric field, which was verified by the standard polarization-electric field hysteresis measurement. Finally, X-ray 2θ-scan patterns under DC bias voltages were collected for the piezoelectric specimen. The domain switching sequence indicated by the XRD results is consistent with that revealed by the e31 ,f measurement.

Gas spark switches with increased operating life for Marx generator of lightning test complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru

A new design of gas spark switches with an increased operating life and stable dynamic characteristics for the Marx generator of the lightning test complex has been developed. The switches are characterized by the following parameters in the mode of operation: voltage up to 80 kV, discharge current up to 50 kA, flowing charge up to 3.5 C/pulse. An increased operating life is achieved by using torus-shaped electrodes with increased working surface area and a trigger electrode in the form of a thick disk with a hole located between them. Low breakdown delay time and high stability of breakdown voltagemore » under dynamic conditions are provided by gas preionization in the spark gap using UV radiation of an additional corona discharge in the axial region.« less

Seasonally forced disease dynamics explored as switching between attractors

NASA Astrophysics Data System (ADS)

Keeling, Matt J.; Rohani, Pejman; Grenfell, Bryan T.

2001-01-01

Biological phenomena offer a rich diversity of problems that can be understood using mathematical techniques. Three key features common to many biological systems are temporal forcing, stochasticity and nonlinearity. Here, using simple disease models compared to data, we examine how these three factors interact to produce a range of complicated dynamics. The study of disease dynamics has been amongst the most theoretically developed areas of mathematical biology; simple models have been highly successful in explaining the dynamics of a wide variety of diseases. Models of childhood diseases incorporate seasonal variation in contact rates due to the increased mixing during school terms compared to school holidays. This ‘binary’ nature of the seasonal forcing results in dynamics that can be explained as switching between two nonlinear spiral sinks. Finally, we consider the stability of the attractors to understand the interaction between the deterministic dynamics and demographic and environmental stochasticity. Throughout attention is focused on the behaviour of measles, whooping cough and rubella.

State-plane analysis of zero-voltage-switching resonant dc/dc power converters

NASA Astrophysics Data System (ADS)

Kazimierczuk, Marian K.; Morse, William D.

The state-plane analysis technique for the zero-voltage-switching resonant dc/dc power converter family of topologies, namely the buck, boost, buck-boost, and Cuk converters is established. The state plane provides a compression of information that allows the designer to uniquely examine the nonlinear dynamics of resonant converter operation. Utilizing the state plane, resonant converter modes of operation are examined and the switching frequencies are derived for the boundaries between these modes, including the boundary of energy conversion.

Toggling Bistable Atoms via Mechanical Switching of Bond Angle

NASA Astrophysics Data System (ADS)

Sweetman, Adam; Jarvis, Sam; Danza, Rosanna; Bamidele, Joseph; Gangopadhyay, Subhashis; Shaw, Gordon A.; Kantorovich, Lev; Moriarty, Philip

2011-04-01

We reversibly switch the state of a bistable atom by direct mechanical manipulation of bond angle using a dynamic force microscope. Individual buckled dimers at the Si(100) surface are flipped via the formation of a single covalent bond, actuating the smallest conceivable in-plane toggle switch (two atoms) via chemical force alone. The response of a given dimer to a flip event depends critically on both the local and nonlocal environment of the target atom—an important consideration for future atomic scale fabrication strategies.

Temporal intermittency and the lifetime of chimera states in ensembles of nonlocally coupled chaotic oscillators

NASA Astrophysics Data System (ADS)

Semenova, N. I.; Strelkova, G. I.; Anishchenko, V. S.; Zakharova, A.

2017-06-01

We describe numerical results for the dynamics of networks of nonlocally coupled chaotic maps. Switchings in time between amplitude and phase chimera states have been first established and studied. It has been shown that in autonomous ensembles, a nonstationary regime of switchings has a finite lifetime and represents a transient process towards a stationary regime of phase chimera. The lifetime of the nonstationary switching regime can be increased to infinity by applying short-term noise perturbations.

Fully programmable and scalable optical switching fabric for petabyte data center.

PubMed

Zhu, Zhonghua; Zhong, Shan; Chen, Li; Chen, Kai

2015-02-09

We present a converged EPS and OCS switching fabric for data center networks (DCNs) based on a distributed optical switching architecture leveraging both WDM & SDM technologies. The architecture is topology adaptive, well suited to dynamic and diverse *-cast traffic patterns. Compared to a typical folded-Clos network, the new architecture is more readily scalable to future multi-Petabyte data centers with 1000 + racks while providing a higher link bandwidth, reducing transceiver count by 50%, and improving cabling efficiency by more than 90%.

Optimal Control of Micro Grid Operation Mode Seamless Switching Based on Radau Allocation Method

NASA Astrophysics Data System (ADS)

Chen, Xiaomin; Wang, Gang

2017-05-01

The seamless switching process of micro grid operation mode directly affects the safety and stability of its operation. According to the switching process from island mode to grid-connected mode of micro grid, we establish a dynamic optimization model based on two grid-connected inverters. We use Radau allocation method to discretize the model, and use Newton iteration method to obtain the optimal solution. Finally, we implement the optimization mode in MATLAB and get the optimal control trajectory of the inverters.

Coupling and Switching in Optically Resonant Periodic Electrode Structures

NASA Astrophysics Data System (ADS)

Bieber, Amy Erica

This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.

Energy Efficient, Cross-Layer Enabled, Dynamic Aggregation Networks for Next Generation Internet

NASA Astrophysics Data System (ADS)

Wang, Michael S.

Today, the Internet traffic is growing at a near exponential rate, driven predominately by data center-based applications and Internet-of-Things services. This fast-paced growth in Internet traffic calls into question the ability of the existing optical network infrastructure to support this continued growth. The overall optical networking equipment efficiency has not been able to keep up with the traffic growth, creating a energy gap that makes energy and cost expenditures scale linearly with the traffic growth. The implication of this energy gap is that it is infeasible to continue using existing networking equipment to meet the growing bandwidth demand. A redesign of the optical networking platform is needed. The focus of this dissertation is on the design and implementation of energy efficient, cross-layer enabled, dynamic optical networking platforms, which is a promising approach to address the exponentially growing Internet bandwidth demand. Chapter 1 explains the motivation for this work by detailing the huge Internet traffic growth and the unsustainable energy growth of today's networking equipment. Chapter 2 describes the challenges and objectives of enabling agile, dynamic optical networking platforms and the vision of the Center for Integrated Access Networks (CIAN) to realize these objectives; the research objectives of this dissertation and the large body of related work in this field is also summarized. Chapter 3 details the design and implementation of dynamic networking platforms that support wavelength switching granularity. The main contribution of this work involves the experimental validation of deep cross-layer communication across the optical performance monitoring (OPM), data, and control planes. The first experiment shows QoS-aware video streaming over a metro-scale test-bed through optical power monitoring of the transmission wavelength and cross-layer feedback control of the power level. The second experiment extends the performance monitoring capabilities to include real-time monitoring of OSNR and polarization mode dispersion (PMD) to enable dynamic wavelength switching and selective restoration. Chapter 4 explains the author?s contributions in designing dynamic networking at the sub-wavelength switching granularity, which can provide greater network efficiency due to its finer granularity. To support dynamic switching, regeneration, adding/dropping, and control decisions on each individual packet, the cross-layer enabled node architecture is enhanced with a FPGA controller that brings much more precise timing and control to the switching, OPM, and control planes. Furthermore, QoS-aware packet protection and dynamic switching, dropping, and regeneration functionalities were experimentally demonstrated in a multi-node network. Chapter 5 describes a technique to perform optical grooming, a process of optically combining multiple incoming data streams into a single data stream, which can simultaneously achieve greater bandwidth utilization and increased spectral efficiency. In addition, an experimental demonstration highlighting a fully functioning multi-node, agile optical networking platform is detailed. Finally, a summary and discussion of future work is provided in Chapter 6. The future of the Internet is very exciting, filled with not-yet-invented applications and services driven by cloud computing and Internet-of-Things. The author is cautiously optimistic that agile, dynamically reconfigurable optical networking is the solution to realizing this future.

Wavelength-switched phase interrogator for EFPI sensors with polarization self-calibrated

NASA Astrophysics Data System (ADS)

Xia, Ji; Wang, Fuyin; Luo, Hong; Xiong, Shuidong

2017-10-01

The stability of the demodulation system for extrinsic Fabry-Perot interferometric(EFPI) sensors is significant to dynamic signal recovery. In the wavelength-switched demodulation system, a phase interrogation with a wavelength-switched structure has been presented. Two reflected peaks were in perpendicular polarization direction and switched in the time-domain. However, the operation point of system affected output of the linearly-polarized beams seriously, and the stability of the system decreased and even failed to work. In order to solve this problem, a polarization control unit is added into the system in this paper. The modified demodulation system has been demonstrated to have a higher stability.

Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems.

PubMed

Jaafar, Ayoub H; Gray, Robert J; Verrelli, Emanuele; O'Neill, Mary; Kelly, Stephen M; Kemp, Neil T

2017-11-09

Optical control of memristors opens the route to new applications in optoelectronic switching and neuromorphic computing. Motivated by the need for reversible and latched optical switching we report on the development of a memristor with electronic properties tunable and switchable by wavelength and polarization specific light. The device consists of an optically active azobenzene polymer, poly(disperse red 1 acrylate), overlaying a forest of vertically aligned ZnO nanorods. Illumination induces trans-cis isomerization of the azobenzene molecules, which expands or contracts the polymer layer and alters the resistance of the off/on states, their ratio and retention time. The reversible optical effect enables dynamic control of a memristor's learning properties including control of synaptic potentiation and depression, optical switching between short-term and long-term memory and optical modulation of the synaptic efficacy via spike timing dependent plasticity. The work opens the route to the dynamic patterning of memristor networks both spatially and temporally by light, thus allowing the development of new optically reconfigurable neural networks and adaptive electronic circuits.

Anterior Cingulate Cortex Instigates Adaptive Switches in Choice by Integrating Immediate and Delayed Components of Value in Ventromedial Prefrontal Cortex

PubMed Central

Guitart-Masip, Marc; Kurth-Nelson, Zeb; Dolan, Raymond J.

2014-01-01

Actions can lead to an immediate reward or punishment and a complex set of delayed outcomes. Adaptive choice necessitates the brain track and integrate both of these potential consequences. Here, we designed a sequential task whereby the decision to exploit or forego an available offer was contingent on comparing immediate value and a state-dependent future cost of expending a limited resource. Crucially, the dynamics of the task demanded frequent switches in policy based on an online computation of changing delayed consequences. We found that human subjects choose on the basis of a near-optimal integration of immediate reward and delayed consequences, with the latter computed in a prefrontal network. Within this network, anterior cingulate cortex (ACC) was dynamically coupled to ventromedial prefrontal cortex (vmPFC) when adaptive switches in choice were required. Our results suggest a choice architecture whereby interactions between ACC and vmPFC underpin an integration of immediate and delayed components of value to support flexible policy switching that accommodates the potential delayed consequences of an action. PMID:24573291

A theoretical and experimental study of neuromorphic atomic switch networks for reservoir computing.

PubMed

Sillin, Henry O; Aguilera, Renato; Shieh, Hsien-Hang; Avizienis, Audrius V; Aono, Masakazu; Stieg, Adam Z; Gimzewski, James K

2013-09-27

Atomic switch networks (ASNs) have been shown to generate network level dynamics that resemble those observed in biological neural networks. To facilitate understanding and control of these behaviors, we developed a numerical model based on the synapse-like properties of individual atomic switches and the random nature of the network wiring. We validated the model against various experimental results highlighting the possibility to functionalize the network plasticity and the differences between an atomic switch in isolation and its behaviors in a network. The effects of changing connectivity density on the nonlinear dynamics were examined as characterized by higher harmonic generation in response to AC inputs. To demonstrate their utility for computation, we subjected the simulated network to training within the framework of reservoir computing and showed initial evidence of the ASN acting as a reservoir which may be optimized for specific tasks by adjusting the input gain. The work presented represents steps in a unified approach to experimentation and theory of complex systems to make ASNs a uniquely scalable platform for neuromorphic computing.

A variational method for analyzing limit cycle oscillations in stochastic hybrid systems

NASA Astrophysics Data System (ADS)

Bressloff, Paul C.; MacLaurin, James

2018-06-01

Many systems in biology can be modeled through ordinary differential equations, which are piece-wise continuous, and switch between different states according to a Markov jump process known as a stochastic hybrid system or piecewise deterministic Markov process (PDMP). In the fast switching limit, the dynamics converges to a deterministic ODE. In this paper, we develop a phase reduction method for stochastic hybrid systems that support a stable limit cycle in the deterministic limit. A classic example is the Morris-Lecar model of a neuron, where the switching Markov process is the number of open ion channels and the continuous process is the membrane voltage. We outline a variational principle for the phase reduction, yielding an exact analytic expression for the resulting phase dynamics. We demonstrate that this decomposition is accurate over timescales that are exponential in the switching rate ɛ-1 . That is, we show that for a constant C, the probability that the expected time to leave an O(a) neighborhood of the limit cycle is less than T scales as T exp (-C a /ɛ ) .

A theoretical and experimental study of neuromorphic atomic switch networks for reservoir computing

NASA Astrophysics Data System (ADS)

Sillin, Henry O.; Aguilera, Renato; Shieh, Hsien-Hang; Avizienis, Audrius V.; Aono, Masakazu; Stieg, Adam Z.; Gimzewski, James K.

2013-09-01

Atomic switch networks (ASNs) have been shown to generate network level dynamics that resemble those observed in biological neural networks. To facilitate understanding and control of these behaviors, we developed a numerical model based on the synapse-like properties of individual atomic switches and the random nature of the network wiring. We validated the model against various experimental results highlighting the possibility to functionalize the network plasticity and the differences between an atomic switch in isolation and its behaviors in a network. The effects of changing connectivity density on the nonlinear dynamics were examined as characterized by higher harmonic generation in response to AC inputs. To demonstrate their utility for computation, we subjected the simulated network to training within the framework of reservoir computing and showed initial evidence of the ASN acting as a reservoir which may be optimized for specific tasks by adjusting the input gain. The work presented represents steps in a unified approach to experimentation and theory of complex systems to make ASNs a uniquely scalable platform for neuromorphic computing.

Anterior cingulate cortex instigates adaptive switches in choice by integrating immediate and delayed components of value in ventromedial prefrontal cortex.

PubMed

Economides, Marcos; Guitart-Masip, Marc; Kurth-Nelson, Zeb; Dolan, Raymond J

2014-02-26

Actions can lead to an immediate reward or punishment and a complex set of delayed outcomes. Adaptive choice necessitates the brain track and integrate both of these potential consequences. Here, we designed a sequential task whereby the decision to exploit or forego an available offer was contingent on comparing immediate value and a state-dependent future cost of expending a limited resource. Crucially, the dynamics of the task demanded frequent switches in policy based on an online computation of changing delayed consequences. We found that human subjects choose on the basis of a near-optimal integration of immediate reward and delayed consequences, with the latter computed in a prefrontal network. Within this network, anterior cingulate cortex (ACC) was dynamically coupled to ventromedial prefrontal cortex (vmPFC) when adaptive switches in choice were required. Our results suggest a choice architecture whereby interactions between ACC and vmPFC underpin an integration of immediate and delayed components of value to support flexible policy switching that accommodates the potential delayed consequences of an action.

Analysis and design of a genetic circuit for dynamic metabolic engineering.

PubMed

Anesiadis, Nikolaos; Kobayashi, Hideki; Cluett, William R; Mahadevan, Radhakrishnan

2013-08-16

Recent advances in synthetic biology have equipped us with new tools for bioprocess optimization at the genetic level. Previously, we have presented an integrated in silico design for the dynamic control of gene expression based on a density-sensing unit and a genetic toggle switch. In the present paper, analysis of a serine-producing Escherichia coli mutant shows that an instantaneous ON-OFF switch leads to a maximum theoretical productivity improvement of 29.6% compared to the mutant. To further the design, global sensitivity analysis is applied here to a mathematical model of serine production in E. coli coupled with a genetic circuit. The model of the quorum sensing and the toggle switch involves 13 parameters of which 3 are identified as having a significant effect on serine concentration. Simulations conducted in this reduced parameter space further identified the optimal ranges for these 3 key parameters to achieve productivity values close to the maximum theoretical values. This analysis can now be used to guide the experimental implementation of a dynamic metabolic engineering strategy and reduce the time required to design the genetic circuit components.

Directing Stem Cell Differentiation via Electrochemical Reversible Switching between Nanotubes and Nanotips of Polypyrrole Array.

PubMed

Wei, Yan; Mo, Xiaoju; Zhang, Pengchao; Li, Yingying; Liao, Jingwen; Li, Yongjun; Zhang, Jinxing; Ning, Chengyun; Wang, Shutao; Deng, Xuliang; Jiang, Lei

2017-06-27

Control of stem cell behaviors at solid biointerfaces is critical for stem-cell-based regeneration and generally achieved by engineering chemical composition, topography, and stiffness. However, the influence of dynamic stimuli at the nanoscale from solid biointerfaces on stem cell fate remains unclear. Herein, we show that electrochemical switching of a polypyrrole (Ppy) array between nanotubes and nanotips can alter surface adhesion, which can strongly influence mechanotransduction activation and guide differentiation of mesenchymal stem cells (MSCs). The Ppy array, prepared via template-free electrochemical polymerization, can be reversibly switched between highly adhesive hydrophobic nanotubes and poorly adhesive hydrophilic nanotips through an electrochemical oxidation/reduction process, resulting in dynamic attachment and detachment to MSCs at the nanoscale. Multicyclic attachment/detachment of the Ppy array to MSCs can activate intracellular mechanotransduction and osteogenic differentiation independent of surface stiffness and chemical induction. This smart surface, permitting transduction of nanoscaled dynamic physical inputs into biological outputs, provides an alternative to classical cell culture substrates for regulating stem cell fate commitment. This study represents a general strategy to explore nanoscaled interactions between stem cells and stimuli-responsive surfaces.

Nanocluster building blocks of artificial square spin ice: Stray-field studies of thermal dynamics

NASA Astrophysics Data System (ADS)

Pohlit, Merlin; Porrati, Fabrizio; Huth, Michael; Ohno, Yuzo; Ohno, Hideo; Müller, Jens

2015-05-01

We present measurements of the thermal dynamics of a Co-based single building block of an artificial square spin ice fabricated by focused electron-beam-induced deposition. We employ micro-Hall magnetometry, an ultra-sensitive tool to study the stray field emanating from magnetic nanostructures, as a new technique to access the dynamical properties during the magnetization reversal of the spin-ice nanocluster. The obtained hysteresis loop exhibits distinct steps, displaying a reduction of their "coercive field" with increasing temperature. Therefore, thermally unstable states could be repetitively prepared by relatively simple temperature and field protocols allowing one to investigate the statistics of their switching behavior within experimentally accessible timescales. For a selected switching event, we find a strong reduction of the so-prepared states' "survival time" with increasing temperature and magnetic field. Besides the possibility to control the lifetime of selected switching events at will, we find evidence for a more complex behavior caused by the special spin ice arrangement of the macrospins, i.e., that the magnetic reversal statistically follows distinct "paths" most likely driven by thermal perturbation.

A thorough investigation of the progressive reset dynamics in HfO{sub 2}-based resistive switching structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lorenzi, P., E-mail: lorenzi@die.uniroma1.it; Rao, R.; Irrera, F.

2015-09-14

According to previous reports, filamentary electron transport in resistive switching HfO{sub 2}-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated heremore » that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.« less

Complexity and dynamics of switched human balance control during quiet standing.

PubMed

Nema, Salam; Kowalczyk, Piotr; Loram, Ian

2015-10-01

In this paper, we use a combination of numerical simulations, time series analysis, and complexity measures to investigate the dynamics of switched systems with noise, which are often used as models of human balance control during quiet standing. We link the results with complexity measures found in experimental data of human sway motion during quiet standing. The control model ensuring balance, which we use, is based on an act-and-wait control concept, that is, a human controller is switched on when a certain sway angle is reached. Otherwise, there is no active control present. Given a time series data, we determine how does it look a typical pattern of control strategy in our model system. We detect the switched nonlinearity in the system using a frequency analysis method in the absence of noise. We also analyse the effect of time delay on the existence of limit cycles in the system in the absence of noise. We perform the entropy and detrended fluctuation analyses in view of linking the switchings (and the dead zone) with the occurrences of complexity in the model system in the presence of noise. Finally, we perform the entropy and detrended fluctuation analyses on experimental data and link the results with numerical findings in our model example.

Uncertainty quantification analysis of the dynamics of an electrostatically actuated microelectromechanical switch model

NASA Astrophysics Data System (ADS)

Snow, Michael G.; Bajaj, Anil K.

2015-08-01

This work presents an uncertainty quantification (UQ) analysis of a comprehensive model for an electrostatically actuated microelectromechanical system (MEMS) switch. The goal is to elucidate the effects of parameter variations on certain key performance characteristics of the switch. A sufficiently detailed model of the electrostatically actuated switch in the basic configuration of a clamped-clamped beam is developed. This multi-physics model accounts for various physical effects, including the electrostatic fringing field, finite length of electrodes, squeeze film damping, and contact between the beam and the dielectric layer. The performance characteristics of immediate interest are the static and dynamic pull-in voltages for the switch. Numerical approaches for evaluating these characteristics are developed and described. Using Latin Hypercube Sampling and other sampling methods, the model is evaluated to find these performance characteristics when variability in the model's geometric and physical parameters is specified. Response surfaces of these results are constructed via a Multivariate Adaptive Regression Splines (MARS) technique. Using a Direct Simulation Monte Carlo (DSMC) technique on these response surfaces gives smooth probability density functions (PDFs) of the outputs characteristics when input probability characteristics are specified. The relative variation in the two pull-in voltages due to each of the input parameters is used to determine the critical parameters.

Validating the energy transport modeling of the DIII-D and EAST ramp up experiments using TSC

NASA Astrophysics Data System (ADS)

Liu, Li; Guo, Yong; Chan, Vincent; Mao, Shifeng; Wang, Yifeng; Pan, Chengkang; Luo, Zhengping; Zhao, Hailin; Ye, Minyou

2017-06-01

The confidence in ramp up scenario design of the China fusion engineering test reactor (CFETR) can be significantly enhanced using validated transport models to predict the current profile and temperature profile. In the tokamak simulation code (TSC), two semi-empirical energy transport models (the Coppi-Tang (CT) and BGB model) and three theory-based models (the GLF23, MMM95 and CDBM model) are investigated on the CFETR relevant ramp up discharges, including three DIII-D ITER-like ramp up discharges and one EAST ohmic discharge. For the DIII-D discharges, all the transport models yield dynamic {{\\ell}\\text{i}} within +/- 0.15 deviations except for some time points where the experimental fluctuation is very strong. All the models agree with the experimental {β\\text{p}} except that the CT model strongly overestimates {β\\text{p}} in the first half of ramp up phase. When applying the CT, CDBM and GLF23 model to estimate the internal flux, they show maximum deviations of more than 10% because of inaccuracies in the temperature profile predictions, while the BGB model performs best on the internal flux. Although all the models fall short in reproducing the dynamic {{\\ell}\\text{i}} evolution for the EAST tokamak, the result of the BGB model is the closest to the experimental {{\\ell}\\text{i}} . Based on these comparisons, we conclude that the BGB model is the most consistent among these models for simulating CFETR ohmic ramp-up. The CT model with improvement for better simulation of the temperature profiles in the first half of ramp up phase will also be attractive. For the MMM95, GLF23 and CDBM model, better prediction of the edge temperature will improve the confidence for CFETR L-mode simulation. Conclusive validation of any transport model will require extensive future investigation covering a larger variety discharges.

Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

DOE PAGES

Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; ...

2015-09-08

In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3 superlattice

NASA Astrophysics Data System (ADS)

Shirakawa, Hiroki; Araidai, Masaaki; Shiraishi, Kenji

2018-04-01

The interfacial phase change memory (iPCM) based on a GeTe/Sb2Te3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.

Monolithic MZI-SOA hybrid switch for low-power and low-penalty operation.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-03-15

We report the first experimental demonstration of a monolithically integrated hybrid dilated 2×2 modular optical switch using Mach-Zehnder modulators as low-loss 1×2 switching elements and short semiconductor optical amplifiers to provide additional extinction and gain. An excellent 40 dB cross-talk/extinction ratio is recorded with data-modulated signal-to-noise ratios of up to 44 dB in a 0.1 nm bandwidth. A switching time of 3 ns is demonstrated. Bit error rate studies show extremely low subsystem penalties of less than 0.1 dB, and studies indicate that, by using this hybrid switch building block, an 8×8 port switch could be achieved with 14 dB input power dynamic range for subsystem penalties of less than 0.5 dB.

High dynamic range charge measurements

DOEpatents

De Geronimo, Gianluigi

2012-09-04

A charge amplifier for use in radiation sensing includes an amplifier, at least one switch, and at least one capacitor. The switch selectively couples the input of the switch to one of at least two voltages. The capacitor is electrically coupled in series between the input of the amplifier and the input of the switch. The capacitor is electrically coupled to the input of the amplifier without a switch coupled therebetween. A method of measuring charge in radiation sensing includes selectively diverting charge from an input of an amplifier to an input of at least one capacitor by selectively coupling an output of the at least one capacitor to one of at least two voltages. The input of the at least one capacitor is operatively coupled to the input of the amplifier without a switch coupled therebetween. The method also includes calculating a total charge based on a sum of the amplified charge and the diverted charge.

Fabrication of SWCNT based flexible chemiresistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajput, Mayank, E-mail: mnk.rajput1@gmail.com; Das, S.; Kaur, Rajvinder

2016-04-13

Carboxyl (-COOH) functionalized SWCNT chemiresistors have been realized on Kapton substrate patterned with Au microelectrodes by the drop casting of functionalized SWCNT dispersion in DI water. I-V measurements on fabricated chemiresistor showed ohmic behavior at different temperatures (25°C-120°C). The effect of bending on flexible functionalized SWCNT chemiresistor for different diameter has been measured. It has been found that bending at different radius of curvature doesn’t change the ohmic behavior of fabricated chemiresistor. Achieved results are promising for cheap flexible electronic devices.

Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

NASA Astrophysics Data System (ADS)

de Moura, F. A. B. F.; Lyra, M. L.; de Almeida, M. L.; Ourique, G. S.; Fulco, U. L.; Albuquerque, E. L.

2016-10-01

We determine, by using a tight-binding model Hamiltonian, the characteristic current-voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation.

A tweaking principle for executive control: neuronal circuit mechanism for rule-based task switching and conflict resolution.

PubMed

Ardid, Salva; Wang, Xiao-Jing

2013-12-11

A hallmark of executive control is the brain's agility to shift between different tasks depending on the behavioral rule currently in play. In this work, we propose a "tweaking hypothesis" for task switching: a weak rule signal provides a small bias that is dramatically amplified by reverberating attractor dynamics in neural circuits for stimulus categorization and action selection, leading to an all-or-none reconfiguration of sensory-motor mapping. Based on this principle, we developed a biologically realistic model with multiple modules for task switching. We found that the model quantitatively accounts for complex task switching behavior: switch cost, congruency effect, and task-response interaction; as well as monkey's single-neuron activity associated with task switching. The model yields several testable predictions, in particular, that category-selective neurons play a key role in resolving sensory-motor conflict. This work represents a neural circuit model for task switching and sheds insights in the brain mechanism of a fundamental cognitive capability.

The Evolution of Phenotypic Switching in Subdivided Populations

PubMed Central

Carja, Oana; Liberman, Uri; Feldman, Marcus W.

2014-01-01

Stochastic switching is an example of phenotypic bet hedging, where offspring can express a phenotype different from that of their parents. Phenotypic switching is well documented in viruses, yeast, and bacteria and has been extensively studied when the selection pressures vary through time. However, there has been little work on the evolution of phenotypic switching under both spatially and temporally fluctuating selection pressures. Here we use a population genetic model to explore the interaction of temporal and spatial variation in determining the evolutionary dynamics of phenotypic switching. We find that the stable switching rate is mainly determined by the rate of environmental change and the migration rate. This stable rate is also a decreasing function of the recombination rate, although this is a weaker effect than those of either the period of environmental change or the migration rate. This study highlights the interplay of spatial and temporal environmental variability, offering new insights into how migration can influence the evolution of phenotypic switching rates, mutation rates, or other sources of phenotypic variation. PMID:24496012

Evolution of households’ responses to the groundwater arsenic crisis in Bangladesh: information on environmental health risks can have increasing behavioral impact over time

PubMed Central

Balasubramanya, Soumya; Pfaff, Alexander; Bennear, Lori; Tarozzi, Alessandro; Ahmed, Kazi Matin; Schoenfeld, Amy; van Geen, Alexander

2014-01-01

A national campaign of well testing through 2003 enabled households in rural Bangladesh to switch, at least for drinking, from high-arsenic wells to neighboring lower-arsenic wells. We study the well-switching dynamics over time by re-interviewing, in 2008, a randomly selected subset of households in the Araihazar region who had been interviewed in 2005. Contrary to concerns that the impact of arsenic information on switching behavior would erode over time, we find that not only was 2003–2005 switching highly persistent but also new switching by 2008 doubled the share of households at unsafe wells who had switched. The passage of time also had a cost: 22% of households did not recall test results by 2008. The loss of arsenic knowledge led to staying at unsafe wells and switching from safe wells. Our results support ongoing well testing for arsenic to reinforce this beneficial information. PMID:25383015

Temperature control of fimbriation circuit switch in uropathogenic Escherichia coli: quantitative analysis via automated model abstraction.

PubMed

Kuwahara, Hiroyuki; Myers, Chris J; Samoilov, Michael S

2010-03-26

Uropathogenic Escherichia coli (UPEC) represent the predominant cause of urinary tract infections (UTIs). A key UPEC molecular virulence mechanism is type 1 fimbriae, whose expression is controlled by the orientation of an invertible chromosomal DNA element-the fim switch. Temperature has been shown to act as a major regulator of fim switching behavior and is overall an important indicator as well as functional feature of many urologic diseases, including UPEC host-pathogen interaction dynamics. Given this panoptic physiological role of temperature during UTI progression and notable empirical challenges to its direct in vivo studies, in silico modeling of corresponding biochemical and biophysical mechanisms essential to UPEC pathogenicity may significantly aid our understanding of the underlying disease processes. However, rigorous computational analysis of biological systems, such as fim switch temperature control circuit, has hereto presented a notoriously demanding problem due to both the substantial complexity of the gene regulatory networks involved as well as their often characteristically discrete and stochastic dynamics. To address these issues, we have developed an approach that enables automated multiscale abstraction of biological system descriptions based on reaction kinetics. Implemented as a computational tool, this method has allowed us to efficiently analyze the modular organization and behavior of the E. coli fimbriation switch circuit at different temperature settings, thus facilitating new insights into this mode of UPEC molecular virulence regulation. In particular, our results suggest that, with respect to its role in shutting down fimbriae expression, the primary function of FimB recombinase may be to effect a controlled down-regulation (rather than increase) of the ON-to-OFF fim switching rate via temperature-dependent suppression of competing dynamics mediated by recombinase FimE. Our computational analysis further implies that this down-regulation mechanism could be particularly significant inside the host environment, thus potentially contributing further understanding toward the development of novel therapeutic approaches to UPEC-caused UTIs.

New paradigm for task switching strategies while performing multiple tasks: entropy and symbolic dynamics analysis of voluntary patterns.

PubMed

Guastello, Stephen J; Gorin, Hillary; Huschen, Samuel; Peters, Natalie E; Fabisch, Megan; Poston, Kirsten

2012-10-01

It has become well established in laboratory experiments that switching tasks, perhaps due to interruptions at work, incur costs in response time to complete the next task. Conditions are also known that exaggerate or lessen the switching costs. Although switching costs can contribute to fatigue, task switching can also be an adaptive response to fatigue. The present study introduces a new research paradigm for studying the emergence of voluntary task switching regimes, self-organizing processes therein, and the possibly conflicting roles of switching costs and minimum entropy. Fifty-four undergraduates performed 7 different computer-based cognitive tasks producing sets of 49 responses under instructional conditions requiring task quotas or no quotas. The sequences of task choices were analyzed using orbital decomposition to extract pattern types and lengths, which were then classified and compared with regard to Shannon entropy, topological entropy, number of task switches involved, and overall performance. Results indicated that similar but different patterns were generated under the two instructional conditions, and better performance was associated with lower topological entropy. Both entropy metrics were associated with the amount of voluntary task switching. Future research should explore conditions affecting the trade-off between switching costs and entropy, levels of automaticity between task elements, and the role of voluntary switching regimes on fatigue.

Polarization and switching properties of holographic polymer-dispersed liquid-crystal gratings. I. Theoretical model

NASA Astrophysics Data System (ADS)

Sutherland, Richard L.

2002-12-01

Polarization properties and electro-optical switching behavior of holographic polymer-dispersed liquid-crystal (HPDLC) reflection and transmission gratings are studied. A theoretical model is developed that combines anisotropic coupled-wave theory with an elongated liquid-crystal-droplet switching model and includes the effects of a statistical orientational distribution of droplet-symmetry axes. Angle- and polarization-dependent switching behaviors of HPDLC gratings are elucidated, and the effects on dynamic range are described. A new type of electro-optical switching not seen in ordinary polymer-dispersed liquid crystals, to the best of the author's knowledge, is presented and given a physical interpretation. The model provides valuable insight to the physics of these gratings and can be applied to the design of HPDLC holographic optical elements.

The effect of external magnetic field changing on the correlated quantum dot dynamics

NASA Astrophysics Data System (ADS)

Mantsevich, V. N.; Maslova, N. S.; Arseyev, P. I.

2018-06-01

The non-stationary response of local magnetic moment to abrupt switching "on" and "off" of external magnetic field was studied for a single-level quantum dot (QD) coupled to a reservoir. We found that transient processes look different for the shallow and deep localized energy level. It was demonstrated that for deep energy level the relaxation rates of the local magnetic moment strongly differ in the case of magnetic field switching "on" or "off". Obtained results can be applied in the area of dynamic memory devices stabilization in the presence of magnetic field.

Reduction in the write error rate of voltage-induced dynamic magnetization switching using the reverse bias method

NASA Astrophysics Data System (ADS)

Ikeura, Takuro; Nozaki, Takayuki; Shiota, Yoichi; Yamamoto, Tatsuya; Imamura, Hiroshi; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

2018-04-01

Using macro-spin modeling, we studied the reduction in the write error rate (WER) of voltage-induced dynamic magnetization switching by enhancing the effective thermal stability of the free layer using a voltage-controlled magnetic anisotropy change. Marked reductions in WER can be achieved by introducing reverse bias voltage pulses both before and after the write pulse. This procedure suppresses the thermal fluctuations of magnetization in the initial and final states. The proposed reverse bias method can offer a new way of improving the writing stability of voltage-driven spintronic devices.

Simultaneous Bistability of a Qubit and Resonator in Circuit Quantum Electrodynamics

NASA Astrophysics Data System (ADS)

Mavrogordatos, Th. K.; Tancredi, G.; Elliott, M.; Peterer, M. J.; Patterson, A.; Rahamim, J.; Leek, P. J.; Ginossar, E.; Szymańska, M. H.

2017-01-01

We explore the joint activated dynamics exhibited by two quantum degrees of freedom: a cavity mode oscillator which is strongly coupled to a superconducting qubit in the strongly coherently driven dispersive regime. Dynamical simulations and complementary measurements show a range of parameters where both the cavity and the qubit exhibit sudden simultaneous switching between two metastable states. This manifests in ensemble averaged amplitudes of both the cavity and qubit exhibiting a partial coherent cancellation. Transmission measurements of driven microwave cavities coupled to transmon qubits show detailed features which agree with the theory in the regime of simultaneous switching.

A compact model for selectors based on metal doped electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Lu; Song, Wenhao; Yang, J. Joshua; Li, Hai; Chen, Yiran

2018-04-01

A selector device that demonstrates high nonlinearity and low switching voltages was fabricated using HfOx as a solid electrolyte doped with Ag electrodes. The electronic conductance of the volatile conductive filaments responsible for the switching was studied under both static and dynamic conditions. A compact model is developed from this study that describes the physical processes of the formation and rupture of the Ag filament(s). A dynamic capacitance model is used to fit the transient current traces under different voltage bias, which enables the extraction of parameters associated with the various parasitic components in the device.

Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

NASA Astrophysics Data System (ADS)

Radulescu, Fabian

2000-12-01

Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

Effects of automation and task load on task switching during human supervision of multiple semi-autonomous robots in a dynamic environment.

PubMed

Squire, P N; Parasuraman, R

2010-08-01

The present study assessed the impact of task load and level of automation (LOA) on task switching in participants supervising a team of four or eight semi-autonomous robots in a simulated 'capture the flag' game. Participants were faster to perform the same task than when they chose to switch between different task actions. They also took longer to switch between different tasks when supervising the robots at a high compared to a low LOA. Task load, as manipulated by the number of robots to be supervised, did not influence switch costs. The results suggest that the design of future unmanned vehicle (UV) systems should take into account not simply how many UVs an operator can supervise, but also the impact of LOA and task operations on task switching during supervision of multiple UVs. The findings of this study are relevant for the ergonomics practice of UV systems. This research extends the cognitive theory of task switching to inform the design of UV systems and results show that switching between UVs is an important factor to consider.

CXSFIT Code Application to Process Charge-Exchange Recombination Spectroscopy Data at the T-10 Tokamak

NASA Astrophysics Data System (ADS)

Serov, S. V.; Tugarinov, S. N.; Klyuchnikov, L. A.; Krupin, V. A.; von Hellermann, M.

2017-12-01

The applicability of the CXSFIT code to process experimental data from Charge-eXchange Recombination Spectroscopy (CXRS) diagnostics at the T-10 tokamak is studied with a view to its further use for processing experimental data at the ITER facility. The design and operating principle of the CXRS diagnostics are described. The main methods for processing the CXRS spectra of the 5291-Å line of C5+ ions at the T-10 tokamak (with and without subtraction of parasitic emission from the edge plasma) are analyzed. The method of averaging the CXRS spectra over several shots, which is used at the T-10 tokamak to increase the signal-to-noise ratio, is described. The approximation of the spectrum by a set of Gaussian components is used to identify the active CXRS line in the measured spectrum. Using the CXSFIT code, the ion temperature in ohmic discharges and discharges with auxiliary electron cyclotron resonance heating (ECRH) at the T-10 tokamak is calculated from the CXRS spectra of the 5291-Å line. The time behavior of the ion temperature profile in different ohmic heating modes is studied. The temperature profile dependence on the ECRH power is measured, and the dynamics of ECR removal of carbon nuclei from the T-10 plasma is described. Experimental data from the CXRS diagnostics at T-10 substantially contribute to the implementation of physical programs of studies on heat and particle transport in tokamak plasmas and investigation of geodesic acoustic mode properties.

Electron particle transport and turbulence studies in the T-10 tokamak

NASA Astrophysics Data System (ADS)

Vershkov, V. A.; Borisov, M. A.; Subbotin, G. F.; Shelukhin, D. A.; Dnestrovskii, Yu. N.; Danilov, A. V.; Cherkasov, S. V.; Gorbunov, E. P.; Sergeev, D. S.; Grashin, S. A.; Krylov, S. V.; Kuleshin, E. O.; Myalton, T. B.; Skosyrev, Yu. V.; Chistiakov, V. V.

2013-08-01

The goals of this paper are to compare the results of electron particle transport measurements in ohmic (OH) plasmas by means of a small perturbation technique, high-level gas puff and gas switch off, investigate the phenomenon of ‘density pump out’ during electron cyclotron resonance heating (ECRH) and to correlate density behaviour with turbulence. Two approaches for plasma particle transport studies were compared: the low perturbation technique of periodic puff (δn/ne = 0.3%) and strong density variations (δn/ne < 50%), including density ramp-up by gas puff and ramp-down with gas switch off. The model with constant in time diffusion coefficients and pinch velocities could describe the core density perturbations but failed at the edge. In the case of strong puff three stages were distinguished. Degraded energy confinement and, respectively, low turbulence frequencies were observed during density ramp-up and ramp-down, while enhanced confinement and higher turbulence frequencies were typical for the intermediate stage. Density profile variation during this intermediate phase could be described in the framework of the transport model with constant in time coefficients. The application of ECRH at the density ramp-up phase provided the possibility of postponing the ‘density pump out’. The increase in the low-frequency modes in turbulence spectra was observed at the ‘density pump out’ phase during central ECRH. Although the high- and low-frequency bands of turbulence spectra behaved as trapped electron mode and ion temperature gradient, respectively, they both rotated at the same angular velocity as a rigid body together with magnetohydrodynamic mode m/n = 2/1 and [E × B] plasma rotation.

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

NASA Technical Reports Server (NTRS)

Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

1982-01-01

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

NASA Astrophysics Data System (ADS)

Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

Output synchronization of discrete-time dynamical networks based on geometrically incremental dissipativity.

PubMed

Li, Chensong; Zhao, Jun

2017-01-01

In this work, we investigate the output synchronization problem for discrete-time dynamical networks with identical nodes. Firstly, if each node of a network is geometrically incrementally dissipative, the entire network can be viewed as a geometrically dissipative nonlinear system by choosing a particular input-output pair. Then, based on the geometrical dissipativity property, we consider two cases: output synchronization under arbitrary topology and switching topology, respectively. For the first case, we establish several criteria of output synchronization under arbitrary switching between a set of connection topologies by employing a common Lyapunov function. For the other case, we give the design method of a switching signal to achieve output synchronization even if all subnetworks are not synchronous. Finally, an example is provided to illustrate the effectiveness of the main results. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

A corticothalamic switch: controlling the thalamus with dynamic synapses

PubMed Central

Crandall, Shane R.; Cruikshank, Scott J.; Connors, Barry W.

2015-01-01

SUMMARY Corticothalamic neurons provide massive input to the thalamus. This top-down projection may allow cortex to regulate sensory processing by modulating the excitability of thalamic cells. Layer 6 corticothalamic neurons monosynaptically excite thalamocortical cells, but also indirectly inhibit them by driving inhibitory cells of the thalamic reticular nucleus. Whether corticothalamic activity generally suppresses or excites the thalamus remains unclear. Here we show that the corticothalamic influence is dynamic, with the excitatory-inhibitory balance shifting in an activity-dependent fashion. During low-frequency activity corticothalamic effects are mainly suppressive, whereas higher frequency activity (even a short bout of gamma frequency oscillations) converts the corticothalamic influence to enhancement. The mechanism of this switching depends upon distinct forms of short-term synaptic plasticity across multiple corticothalamic circuit components. Our results reveal an activity-dependent mechanism by which corticothalamic neurons can bidirectionally switch the excitability and sensory throughput of the thalamus, possibly to meet changing behavioral demands. PMID:25913856

Formation control of VTOL UAV vehicles under switching-directed interaction topologies with disturbance rejection

NASA Astrophysics Data System (ADS)

Kabiri, Meisam; Atrianfar, Hajar; Menhaj, Mohammad B.

2018-01-01

This paper addresses the adaptive formation control of a group of vertical take-off and landing (VTOL) unmanned aerial vehicles (UAV) with switching-directed interaction topologies. In addition, to tackle the adverse effect of disturbances, a couple of smooth bounded estimators are involved in the procedure design. Exploiting an extraction algorithm, we take advantage of the fully actuated rotational dynamics, to control the translational dynamics of each vehicle. We propose a distributed control scheme such that all vehicles track a desired reference velocity signal while keeping a desired prespecified formation. In this framework, the underlying topology of the agents may switch among several directed graphs, each having a spanning tree. The stability of the overall closed-loop system is proved through Lyapunov function. Finally, simulation results are given to better highlight the effectiveness of the proposed control scheme.

Switching of bound vector solitons for the coupled nonlinear Schrödinger equations with nonhomogenously stochastic perturbations

NASA Astrophysics Data System (ADS)

Sun, Zhi-Yuan; Gao, Yi-Tian; Yu, Xin; Liu, Ying

2012-12-01

We investigate the dynamics of the bound vector solitons (BVSs) for the coupled nonlinear Schrödinger equations with the nonhomogenously stochastic perturbations added on their dispersion terms. Soliton switching (besides soliton breakup) can be observed between the two components of the BVSs. Rate of the maximum switched energy (absolute values) within the fixed propagation distance (about 10 periods of the BVSs) enhances in the sense of statistics when the amplitudes of stochastic perturbations increase. Additionally, it is revealed that the BVSs with enhanced coherence are more robust against the perturbations with nonhomogenous stochasticity. Diagram describing the approximate borders of the splitting and non-splitting areas is also given. Our results might be helpful in dynamics of the BVSs with stochastic noises in nonlinear optical fibers or with stochastic quantum fluctuations in Bose-Einstein condensates.

Switching of bound vector solitons for the coupled nonlinear Schrödinger equations with nonhomogenously stochastic perturbations.

PubMed

Sun, Zhi-Yuan; Gao, Yi-Tian; Yu, Xin; Liu, Ying

2012-12-01

We investigate the dynamics of the bound vector solitons (BVSs) for the coupled nonlinear Schrödinger equations with the nonhomogenously stochastic perturbations added on their dispersion terms. Soliton switching (besides soliton breakup) can be observed between the two components of the BVSs. Rate of the maximum switched energy (absolute values) within the fixed propagation distance (about 10 periods of the BVSs) enhances in the sense of statistics when the amplitudes of stochastic perturbations increase. Additionally, it is revealed that the BVSs with enhanced coherence are more robust against the perturbations with nonhomogenous stochasticity. Diagram describing the approximate borders of the splitting and non-splitting areas is also given. Our results might be helpful in dynamics of the BVSs with stochastic noises in nonlinear optical fibers or with stochastic quantum fluctuations in Bose-Einstein condensates.

Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Vázquez, L.; Alves, L. C.; Corregidor, V.; Romero, M. F.; Pantellini, A.; Lanzieri, C.; Muñoz, E.

2014-05-01

The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAlx and AuAlx phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals.

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X. J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2014-10-28

The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50 nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease themore » barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.« less

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

NASA Astrophysics Data System (ADS)

Prucnal, S.; Frigerio, J.; Napolitani, E.; Ballabio, A.; Berencén, Y.; Rebohle, L.; Wang, M.; Böttger, R.; Voelskow, M.; Isella, G.; Hübner, R.; Helm, M.; Zhou, S.; Skorupa, W.

2017-11-01

Highly scaled nanoelectronics requires effective channel doping above 5 × 1019 cm-3 together with ohmic contacts with extremely low specific contact resistivity. Nowadays, Ge becomes very attractive for modern optoelectronics due to the high carrier mobility and the quasi-direct bandgap, but n-type Ge doped above 5 × 1019 cm-3 is metastable and thus difficult to be achieved. In this letter, we report on the formation of low-resistivity ohmic contacts in highly n-type doped Ge via non-equilibrium thermal processing consisting of millisecond-range flash lamp annealing. This is a single-step process that allows for the formation of a 90 nm thick NiGe layer with a very sharp interface between NiGe and Ge. The measured carrier concentration in Ge is above 9 × 1019 cm-3 with a specific contact resistivity of 1.2 × 10-6 Ω cm2. Simultaneously, both the diffusion and the electrical deactivation of P are fully suppressed.