FinFET and UTBB for RF SOI communication systems

NASA Astrophysics Data System (ADS)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

Oki-Doku: Number Puzzles

ERIC Educational Resources Information Center

Gomez, Cristina; Novak, Dani

2014-01-01

The Common Core State Standards for Mathematics (CCSSM) (CCSSI 2010) emphasize the Standards for Mathematical Practice (SMP) that describe processes and proficiencies included in the NCTM Process Standards (NCTM 2000) and in the Strands for Mathematical Proficiency (NRC 2001). The development of these mathematical practices should happen in…

Novel spot size converter for coupling standard single mode fibers to SOI waveguides

NASA Astrophysics Data System (ADS)

Sisto, Marco Michele; Fisette, Bruno; Paultre, Jacques-Edmond; Paquet, Alex; Desroches, Yan

2016-03-01

We have designed and numerically simulated a novel spot size converter for coupling standard single mode fibers with 10.4μm mode field diameter to 500nm × 220nm SOI waveguides. Simulations based on the eigenmode expansion method show a coupling loss of 0.4dB at 1550nm for the TE mode at perfect alignment. The alignment tolerance on the plane normal to the fiber axis is evaluated at +/-2.2μm for <=1dB excess loss, which is comparable to the alignment tolerance between two butt-coupled standard single mode fibers. The converter is based on a cross-like arrangement of SiOxNy waveguides immersed in a 12μm-thick SiO2 cladding region deposited on top of the SOI chip. The waveguides are designed to collectively support a single degenerate mode for TE and TM polarizations. This guided mode features a large overlap to the LP01 mode of standard telecom fibers. Along the spot size converter length (450μm), the mode is first gradually confined in a single SiOxNy waveguide by tapering its width. Then, the mode is adiabatically coupled to a SOI waveguide underneath the structure through a SOI inverted taper. The shapes of SiOxNy and SOI tapers are optimized to minimize coupling loss and structure length, and to ensure adiabatic mode evolution along the structure, thus improving the design robustness to fabrication process errors. A tolerance analysis based on conservative microfabrication capabilities suggests that coupling loss penalty from fabrication errors can be maintained below 0.3dB. The proposed spot size converter is fully compliant to industry standard microfabrication processes available at INO.

Physicochemical compatibility between ketoprofen lysine salt injections (OKi Fiale, PG060) and pharmaceutical products frequently used for combined therapy.

PubMed

Carlucci, G; Gentile, M M; Bartolini, S; Anacardio, R

2004-01-01

Ketoprofen lysine salt (Oki Fiale, PG060) is a non steroidal anti-inflammatory agent frequently administered by intramuscular route in association regimen with other drugs, such as steroidal anti-inflammatory, muscle relaxant, local anaesthetic and anti-spastic drugs or vitamins. The aim of this study was to investigate the physicochemical compatibility between ketoprofen lysine salt (Oki Fiale, PG060) and other injectable drugs frequently used in association. Physicochemical properties of ketoprofen lysine salt mixtures with different drugs, including colour, clarity, pH and drug content were observed or measured before and after (up to 3 hours) mixing at room temperature and under light protection. Results show that the association of Oki Fiale (PG060) with different drugs does not cause, up to three hours from mixing, any significant variation in the physicochemical parameters mentioned above. In conclusion, the results obtained demonstrated the physicochemical compatibility of Ketoprofen lysine salt (Oki Fiale, PG060) with several injectable drugs, except for Spasmex fiale (chemical incompatibility) and Xylocaina Astra 2% iniettabile mixed whit a volume ratio of 2/1 (physical incompatibility).

Possible scenarios for occurrence of M ~ 7 interplate earthquakes prior to and following the 2011 Tohoku-Oki earthquake based on numerical simulation.

PubMed

Nakata, Ryoko; Hori, Takane; Hyodo, Mamoru; Ariyoshi, Keisuke

2016-05-10

We show possible scenarios for the occurrence of M ~ 7 interplate earthquakes prior to and following the M ~ 9 earthquake along the Japan Trench, such as the 2011 Tohoku-Oki earthquake. One such M ~ 7 earthquake is so-called the Miyagi-ken-Oki earthquake, for which we conducted numerical simulations of earthquake generation cycles by using realistic three-dimensional (3D) geometry of the subducting Pacific Plate. In a number of scenarios, the time interval between the M ~ 9 earthquake and the subsequent Miyagi-ken-Oki earthquake was equal to or shorter than the average recurrence interval during the later stage of the M ~ 9 earthquake cycle. The scenarios successfully reproduced important characteristics such as the recurrence of M ~ 7 earthquakes, coseismic slip distribution, afterslip distribution, the largest foreshock, and the largest aftershock of the 2011 earthquake. Thus, these results suggest that we should prepare for future M ~ 7 earthquakes in the Miyagi-ken-Oki segment even though this segment recently experienced large coseismic slip in 2011.

Possible scenarios for occurrence of M ~ 7 interplate earthquakes prior to and following the 2011 Tohoku-Oki earthquake based on numerical simulation

PubMed Central

Nakata, Ryoko; Hori, Takane; Hyodo, Mamoru; Ariyoshi, Keisuke

2016-01-01

We show possible scenarios for the occurrence of M ~ 7 interplate earthquakes prior to and following the M ~ 9 earthquake along the Japan Trench, such as the 2011 Tohoku-Oki earthquake. One such M ~ 7 earthquake is so-called the Miyagi-ken-Oki earthquake, for which we conducted numerical simulations of earthquake generation cycles by using realistic three-dimensional (3D) geometry of the subducting Pacific Plate. In a number of scenarios, the time interval between the M ~ 9 earthquake and the subsequent Miyagi-ken-Oki earthquake was equal to or shorter than the average recurrence interval during the later stage of the M ~ 9 earthquake cycle. The scenarios successfully reproduced important characteristics such as the recurrence of M ~ 7 earthquakes, coseismic slip distribution, afterslip distribution, the largest foreshock, and the largest aftershock of the 2011 earthquake. Thus, these results suggest that we should prepare for future M ~ 7 earthquakes in the Miyagi-ken-Oki segment even though this segment recently experienced large coseismic slip in 2011. PMID:27161897

Fabrication of SOI structures with buried cavities using Si wafer direct bonding and electrochemical etch-stop

NASA Astrophysics Data System (ADS)

Chung, Gwiy-Sang

2003-10-01

This paper describes the fabrication of SOI structures with buried cavities using SDB and electrochemical etch-stop. These methods are suitable for thick membrane fabrication with accurate thickness, uniformity, and flatness. After a feed-through hole for supplied voltage and buried cavities was formed on a handle Si wafer with p-type, the handle wafer was bonded to an active Si wafer consisting of a p-type substrate with an n-type epitaxial layer corresponding to membrane thickness. The bonded pair was then thinned until electrochemical etch-stop occurred at the pn junction during electrochemical etchback. By using the SDB SOI structure with buried cavities, active membranes, which have a free standing structure with a dimension of 900×900 μm2, were fabricated. It is confirmed that the fabrication process of the SDB SOI structure with buried cavities is a powerful and versatile technology for new MEMS applications.

A novel high-performance high-frequency SOI MESFET by the damped electric field

NASA Astrophysics Data System (ADS)

Orouji, Ali A.; Khayatian, Ahmad; Keshavarzi, Parviz

2016-06-01

In this paper, we introduce a novel silicon-on-insulator (SOI) metal-semiconductor field-effect-transistor (MESFET) using the damped electric field (DEF). The proposed structure is geometrically symmetric and compatible with common SOI CMOS fabrication processes. It has two additional oxide regions under the side gates in order to improve DC and RF characteristics of the DEF structure due to changes in the electrical potential, the electrical field distributions, and rearrangement of the charge carriers. Improvement of device performance is investigated by two-dimensional and two-carrier simulation of fundamental parameters such as breakdown voltage (VBR), drain current (ID), output power density (Pmax), transconductance (gm), gate-drain and gate-source capacitances, cut-off frequency (fT), unilateral power gain (U), current gain (h21), maximum available gain (MAG), and minimum noise figure (Fmin). The results show that proposed structure operates with higher performances in comparison with the similar conventional SOI structure.

Mechanically detected terahertz electron spin resonance using SOI-based thin piezoresistive microcantilevers

NASA Astrophysics Data System (ADS)

Ohmichi, Eiji; Miki, Toshihiro; Horie, Hidekazu; Okamoto, Tsubasa; Takahashi, Hideyuki; Higashi, Yoshinori; Itoh, Shoichi; Ohta, Hitoshi

2018-02-01

We developed piezoresistive microcantilevers for mechanically detected electron spin resonance (ESR) in the millimeter-wave region. In this article, fabrication process and device characterization of our self-sensing microcantilevers are presented. High-frequency ESR measurements of a microcrystal of paramagnetic sample is also demonstrated at multiple frequencies up to 160 GHz at liquid helium temperature. Our fabrication is based on relatively simplified processes with silicon-on-insulator (SOI) wafers and spin-on diffusion doping, thus enabling cost-effective and time-saving cantilever fabrication.

Slip Distribution of the 2011 Tohoku-oki Earthquake obtained by Geodetic and Tsunami Data and with a 3-D Finite Element Model

NASA Astrophysics Data System (ADS)

Romano, F.; Trasatti, E.; Lorito, S.; Ito, Y.; Piatanesi, A.; Lanucara, P.; Hirata, K.; D'Agostino, N.; Cocco, M.

2012-12-01

The rupture process of the Great 2011 Tohoku-oki earthquake has been particularly well studied by using an unprecedented collection of geophysical data. There is a general agreement among the different source models obtained by modeling seismological, geodetic and tsunami data. A slip patch of nearly 40÷50 meters has been imaged and located around and up-dip from the hypocenter by most of published models, while some differences exist in the slip pattern retrieved at shallow depths near the trench, likely due to the different resolving power of distinct data sets and to the adopted fault geometry. It is well known that the modeling of great subduction earthquakes requires the use of 3-D structural models in order to properly account for the effects of topography, bathymetry and the geometrical variations of the plate interface as well as for the effects of elastic contrasts between the subducting plate and the continental lithosphere. In this study we build a 3-D Finite Element (FE) model of the Tohoku-oki area in order to infer the slip distribution of the 2011 earthquake by performing a joint inversion of geodetic (GPS and seafloor observations) and tsunami (ocean bottom pressure sensors, DART and GPS buoys) data. The FE model is used to compute the geodetic and tsunami Green's functions. In order to understand how geometrical and elastic heterogeneities control the inferred slip distribution of the Tohoku-oki earthquake, we compare the slip patterns obtained using both homogeneous and heterogeneous structural models. The goal of this study is to better constrain the slip distribution and the maximum slip amplitudes. In particular, we aim to focus on the rupture process in the shallower part of the fault plane and near the trench, which is crucial to model the tsunami data and to assess the tsunamigenic potential of earthquakes in this region.

A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

NASA Astrophysics Data System (ADS)

Kawamoto, Kazunori; Mizuno, Shoji; Abe, Hirofumi; Higuchi, Yasushi; Ishihara, Hideaki; Fukumoto, Harutsugu; Watanabe, Takamoto; Fujino, Seiji; Shirakawa, Isao

2001-04-01

Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI). For circuits, an automotive specific reduced instruction set computer (RISC) center processing unit (CPU), and a novel, all integrated system clock generator, dividing digital phase-locked loop (DDPLL) are proposed. For the device technologies, the authors use SOI-BiCDMOS with trench dielectric-isolation (TD) which enables integration of various devices in an integrated circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desired device characteristics and high electromagnetic interference (EMI) immunity. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS technologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).

Making Wide-IF SIS Mixers with Suspended Metal-Beam Leads

NASA Technical Reports Server (NTRS)

Kaul, Anupama; Bumble, Bruce; Lee, Karen; LeDuc, Henry; Rice, Frank; Zmuidzinas, Jonas

2005-01-01

A process that employs silicon-on-insulator (SOI) substrates and silicon (Si) micromachining has been devised for fabricating wide-intermediate-frequency-band (wide-IF) superconductor/insulator/superconductor (SIS) mixer devices that result in suspended gold beam leads used for radio-frequency grounding. The mixers are formed on 25- m-thick silicon membranes. They are designed to operate in the 200 to 300 GHz frequency band, wherein wide-IF receivers for tropospheric- chemistry and astrophysical investigations are necessary. The fabrication process can be divided into three sections: 1. The front-side process, in which SIS devices with beam leads are formed on a SOI wafer; 2. The backside process, in which the SOI wafer is wax-mounted onto a carrier wafer, then thinned, then partitioned into individual devices; and 3. The release process, in which the individual devices are separated using a lithographic dicing technique. The total thickness of the starting 4-in. (10.16-cm)-diameter SOI wafer includes 25 m for the Si device layer, 0.5 m for the buried oxide (BOX) layer, and 350 m the for Si-handle layer. The front-side process begins with deposition of an etch-stop layer of SiO2 or AlN(x), followed by deposition of a Nb/Al- AlN(x) /Nb trilayer in a load-locked DC magnetron sputtering system. The lithography for four of a total of five layers is performed in a commercial wafer-stepping apparatus. Diagnostic test dies are patterned concurrently at certain locations on the wafer, alongside the mixer devices, using a different mask set. The conventional, self-aligned lift-off process is used to pattern the SIS devices up to the wire level.

Investigation of high-speed Si photodetectors in standard CMOS technology

NASA Astrophysics Data System (ADS)

Wang, Huaqiang; Guo, Xia

2018-05-01

In this paper, the frequency response characteristics of the photodetector(PD) were studied considering intrinsic and extrinsic effects. Then we designed the interdigitated p-i-n PD on Silicon-on-Insulator (SOI) and epitaxial (EPI) substrates with photosensitive area of 30-μm diameter, fabricated by CMOS process. The 2-μm finger-spacing devices exhibited a 205 MHz bandwidth at a reverse bias of 3 V processed on 2-μm SOI substrates. EPI devices with 1 μm finger spacing exhibited a 131 MHz bandwidth under -3 V. Responsivity of 0.051 A/W and 0.21 A/W were measured at 850 nm on SOI and EPI substrates, respectively. Compared with the bulk silicon PD, the bandwidth is greatly improved. The PD gains the high cost performance ratio, which can be widely used in short distance communication such as visible light communication and free space optical communication.

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

NASA Technical Reports Server (NTRS)

Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

2006-01-01

SEU from heavy-ions is measured for SOI PowerPC microprocessors. Results for 0.13 micron PowerPC with 1.1V core voltages increases over 1.3V versions. This suggests that improvement in SEU for scaled devices may be reversed. In recent years there has been interest in the possible use of unhardened commercial microprocessors in space because of their superior performance compared to hardened processors. However, unhardened devices are susceptible to upset from radiation space. More information is needed on how they respond to radiation before they can be used in space. Only a limited number of advanced microprocessors have been subjected to radiation tests, which are designed with lower clock frequencies and higher internal core voltage voltages than recent devices [1-6]. However the trend for commercial Silicon-on-insulator (SOI) microprocessors is to reduce feature size and internal core voltage and increase the clock frequency. Commercial microprocessors with the PowerPC architecture are now available that use partially depleted SOI processes with feature size of 90 nm and internal core voltage as low as 1.0 V and clock frequency in the GHz range. Previously, we reported SEU measurements for SOI commercial PowerPCs with feature size of 0.18 and 0.13 m [7, 8]. The results showed an order of magnitude reduction in saturated cross section compared to CMOS bulk counterparts. This paper examines SEUs in advanced commercial SOI microprocessors, focusing on SEU sensitivity of D-Cache and hangs with feature size and internal core voltage. Results are presented for the Motorola SOI processor with feature sizes of 0.13 microns and internal core voltages of 1.3 and 1.1 V. These results are compared with results for the Motorola SOI processors with feature size of 0.18 microns and internal core voltage of 1.6 and 1.3 V.

Transportation Improvement Program: Fiscal Years 1997 - 2000

DOT National Transportation Integrated Search

1996-06-01

Ohio-Kentucky-Indiana Regional Council of Governments (OKI) is composed of : eight counties: Dearborn in Indiana; Boone, Campbell and Kenton Counties in : Kentucky; and Butler, Clermont, Hamilton, and Warren Counties in Ohio. The OKI : Transportation...

A silicon-on-insulator complementary-metal-oxide-semiconductor compatible flexible electronics technology

NASA Astrophysics Data System (ADS)

Tu, Hongen; Xu, Yong

2012-07-01

This paper reports a simple flexible electronics technology that is compatible with silicon-on-insulator (SOI) complementary-metal-oxide-semiconductor (CMOS) processes. Compared with existing technologies such as direct fabrication on flexible substrates and transfer printing, the main advantage of this technology is its post-SOI-CMOS compatibility. Consequently, high-performance and high-density CMOS circuits can be first fabricated on SOI wafers using commercial foundry and then be integrated into flexible substrates. The yield is also improved by eliminating the transfer printing step. Furthermore, this technology allows the integration of various sensors and microfluidic devices. To prove the concept of this technology, flexible MOSFETs have been demonstrated.

Very thin, high Ge content Si 0.3Ge 0.7 relaxed buffer grown by MBE on SOI(0 0 1) substrate

NASA Astrophysics Data System (ADS)

Myronov, M.; Shiraki, Y.

2007-04-01

Growth procedure and excellent properties of very thin 240 nm thick, 95% relaxed, high Ge content Si 0.3Ge 0.7 buffer grown on SOI(0 0 1) substrate are demonstrated. All epilayers of the newly developed Si 0.3Ge 0.7/SOI(0 0 1) variable-temperature virtual substrate were grown in a single process by solid-source molecular beam epitaxy. Surface analysis of grown samples revealed smooth, cross-hatch free surface with low root mean square surface roughness of 0.9 nm and low threading dislocations density of 5×10 4 cm -2.

300 nm bandwidth adiabatic SOI polarization splitter-rotators exploiting continuous symmetry breaking.

PubMed

Socci, Luciano; Sorianello, Vito; Romagnoli, Marco

2015-07-27

Adiabatic polarization splitter-rotators are investigated exploiting continuous symmetry breaking thereby achieving significant device size and losses reduction in a single mask fabrication process for both SOI channel and ridge waveguides. A crosstalk lower than -25 dB is expected over 300nm bandwidth, making the device suitable for full grid CWDM and diplexer/triplexer FTTH applications at 1310, 1490 and 1550nm.

Single Versus Multiple Solid Organ Injuries Following Blunt Abdominal Trauma.

PubMed

El-Menyar, Ayman; Abdelrahman, Husham; Al-Hassani, Ammar; Peralta, Ruben; AbdelAziz, Hiba; Latifi, Rifat; Al-Thani, Hassan

2017-11-01

We aimed to describe the pattern of solid organ injuries (SOIs) and analyze the characteristics, management and outcomes based on the multiplicity of SOIs. A retrospective study in a Level 1 trauma center was conducted and included patients admitted with blunt abdominal trauma between 2011 and 2014. Data were analyzed and compared for patients with single versus multiple SOIs. A total of 504 patients with SOIs were identified with a mean age of 28 ± 13 years. The most frequently injured organ was liver (45%) followed by spleen (30%) and kidney (18%). One-fifth of patients had multiple SOIs, of that 87% had two injured organs. Patients with multiple SOIs had higher frequency of head injury and injury severity scores (p < 0.05). The majority of SOIs were treated nonoperatively, whereas operative management was required in a quarter of patients, mostly in patients with multiple SOIs (p = 0.01). Blood transfusion, sepsis and hospital stay were greater in multiple than single SOIs (p < 0.05). The overall mortality was 11% which was comparable between the two groups. In patients with single SOIs, the mortality was significantly higher in those who had pancreatic (28.6%) or hepatic injuries (13%) than the other SOIs. SOIs represent one-tenth of trauma admissions in Qatar. Although liver was the most frequently injured organ, the rate of mortality was higher in pancreatic injury. Patients with multiple SOIs had higher morbidity which required frequent operative management. Further prospective studies are needed to develop management algorithm based on the multiplicity of SOIs.

Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

NASA Astrophysics Data System (ADS)

Pradeep, Krishna; Poiroux, Thierry; Scheer, Patrick; Juge, André; Gouget, Gilles; Ghibaudo, Gérard

2018-07-01

This work details the analysis of wafer level global process variability in 28 nm FD-SOI using split C-V measurements. The proposed approach initially evaluates the native on wafer process variability using efficient extraction methods on split C-V measurements. The on-wafer threshold voltage (VT) variability is first studied and modeled using a simple analytical model. Then, a statistical model based on the Leti-UTSOI compact model is proposed to describe the total C-V variability in different bias conditions. This statistical model is finally used to study the contribution of each process parameter to the total C-V variability.

Design and fabrication of piezoresistive p-SOI Wheatstone bridges for high-temperature applications

NASA Astrophysics Data System (ADS)

Kähler, Julian; Döring, Lutz; Merzsch, Stephan; Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2011-06-01

For future measurements while depth drilling, commercial sensors are required for a temperature range from -40 up to 300 °C. Conventional piezoresistive silicon sensors cannot be used at higher temperatures due to an exponential increase of leakage currents which results in a drop of the bridge voltage. A well-known procedure to expand the temperature range of silicon sensors and to reduce leakage currents is to employ Silicon-On-Insulator (SOI) instead of standard wafer material. Diffused resistors can be operated up to 200 °C, but show the same problems beyond due to leakage of the p-njunction. Our approach is to use p-SOI where resistors as well as interconnects are defined by etching down to the oxide layer. Leakage is suppressed and the temperature dependence of the bridges is very low (TCR = (2.6 +/- 0.1) μV/K@1 mA up to 400 °C). The design and process flow will be presented in detail. The characteristics of Wheatstone bridges made of silicon, n- SOI, and p-SOI will be shown for temperatures up to 300 °C. Besides, thermal FEM-simulations will be described revealing the effect of stress between silicon and the silicon-oxide layer during temperature cycling.

Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

PubMed

Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

2014-11-01

The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

Analysis of Aluminum-Nitride SOI for High-Temperature Electronics

NASA Technical Reports Server (NTRS)

Biegel, Bryan A.; Osman, Mohamed A.; Yu, Zhiping

2000-01-01

We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AIN) buried insulators, rather than the conventional silicon-dioxide (SiO2). Because the thermal conductivity of AIN is about 100 times that of SiO2, AIN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET In this work, we compare the performance of AIN-based SOI with that of SiO2-based SOI and conventional MOSFETs. We find that AIN SOI does indeed remove the self-heating penalty of SOL However, several device design trade-offs remain, which our simulations highlight.

Migrating pattern of deformation prior to the Tohoku-Oki earthquake revealed by GRACE data

NASA Astrophysics Data System (ADS)

Panet, Isabelle; Bonvalot, Sylvain; Narteau, Clément; Remy, Dominique; Lemoine, Jean-Michel

2018-05-01

Understanding how and when far-field continuous motions lead to giant subduction earthquakes remains a challenge. An important limitation comes from an incomplete description of aseismic mass fluxes at depth along plate boundaries. Here we analyse Earth's gravity field variations derived from GRACE satellite data in a wide space-time domain surrounding the Mw 9.0 2011 Tohoku-Oki earthquake. We show that this earthquake is the extreme expression of initially silent deformation migrating from depth to the surface across the entire subduction system. Our analysis indeed reveals large-scale gravity and mass changes throughout three tectonic plates and connected slabs, starting a few months before March 2011. Before the Tohoku-Oki earthquake rupture, the gravity variations can be explained by aseismic extension of the Pacific plate slab at mid-upper mantle depth, concomitant with increasing seismicity in the shallower slab. For more than two years after the rupture, the deformation propagated far into the Pacific and Philippine Sea plate interiors, suggesting that subduction accelerated along 2,000 km of the plate boundaries in March 2011. This gravitational image of the earthquake's long-term dynamics provides unique information on deep and crustal processes over intermediate timescales, which could be used in seismic hazard assessment.

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments.

PubMed

Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

2015-08-18

In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a "one-sensor-one-packaging_technology" concept. The second one uses a standard flip-chip bonding technique. The first sensor is a "floating-concept", capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not "floating" but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA.

Ultra compact triplexing filters based on SOI nanowire AWGs

NASA Astrophysics Data System (ADS)

Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

2011-04-01

An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Zheng, Xinyu (Inventor)

2002-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Post-Deployment Reintegration Experiences of AF Personnel: Implications for Scale Development

DTIC Science & Technology

2006-09-01

peuvent également présenter des avantages, notamment une amélioration aux points de vue suivants : confiance en soi , tolérance à l’égard de soi...notamment une amélioration aux points de vue suivants : confiance en soi , tolérance à l’égard de soi, compréhension politique et compétence militaire... confiance en soi , tolérance à l’égard de soi, compréhension politique et compétence militaire. À ce jour, les études sur l’expérience de réinsertion

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Chemical interactions in the subduction factory: New insights from an in situ trace element and hydrogen study of the Ichinomegata and Oki-Dogo mantle xenoliths (Japan)

NASA Astrophysics Data System (ADS)

Satsukawa, Takako; Godard, Marguerite; Demouchy, Sylvie; Michibayashi, Katsuyoshi; Ildefonse, Benoit

2017-07-01

The uppermost mantle in back arc regions is the site of complex interactions between partial melting, melt percolation, and fluid migration. To constrain these interactions and evaluate their consequences on geochemical cycles, we carried out an in situ trace element and water study of a suite of spinel peridotite xenoliths from two regions of the Japan back arc system, Ichinomegata (NE Japan) and Oki-Dogo (SW Japan), using LA-ICPMS and FTIR spectrometry, respectively. This study provides the first full dataset of trace element and hydrogen compositions in peridotites including analyses of all their main constitutive silicate minerals: olivine, orthopyroxene and clinopyroxene. The Ichinomegata peridotites sample a LREE-depleted refractory mantle (Mg# olivine = 0.90; Cr# spinel = 0.07-0.23; Yb clinopyroxene = 7.8-13.3 × C1-chondrite, and La/Yb clinopyroxene = 0.003-0.086 × C1-chondrite), characterized by Th-U positive anomalies and constant values of Nb/Ta. The composition of the studied Ichinomegata samples is consistent with that of an oceanic mantle lithosphere affected by cryptic metasomatic interactions with hydrous/aqueous fluids (crypto-hydrous metasomatism). In contrast, the Oki-Dogo peridotites have low Mg# olivine (0.86-0.93) and a broad range of compositions with clinopyroxene showing "spoon-shaped" to flat, and LREE-enriched patterns. They are also characterized by their homogeneous compositions in the most incompatible LILE (e.g., Rb clinopyroxene = 0.01-0.05 × primitive mantle) and HFSE (e.g., Nb clinopyroxene = 0.01-2.16 × primitive mantle). This characteristic is interpreted as resulting from various degrees of melting and extensive melt-rock interactions. FTIR spectroscopy shows that olivine in both Ichinomegata and Oki-Dogo samples has low water contents ranging from 2 to 7 ppm wt. H2O. In contrast, the water contents of pyroxenes from Ichinomegata peridotites (113-271 ppm wt. H2O for orthopyroxene, and 292-347 ppm wt. H2O for clinopyroxene) are significantly higher than in Oki-Dogo peridotites (9-35 ppm wt. H2O for orthopyroxene, and 15-98 ppm wt. H2O for clinopyroxene). This indicates a relationship between melt-rock interaction and water concentrations in pyroxenes. Our study suggests that the water content of the Japan mantle wedge is controlled by the late melt/fluid/rock interactions evidenced by trace element geochemistry: a mechanism triggered by magma-rock interactions may have acted as an efficient dehydrating process in the Oki-Dogo region while the Ichinomegata mantle water content is controlled by slab-derived crypto-hydrous metasomatism.

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

PubMed Central

Ngo, Ha-Duong; Mukhopadhyay, Biswaijit; Ehrmann, Oswin; Lang, Klaus-Dieter

2015-01-01

In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA. PMID:26295235

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

NASA Astrophysics Data System (ADS)

Damianos, D.; Vitrant, G.; Lei, M.; Changala, J.; Kaminski-Cachopo, A.; Blanc-Pelissier, D.; Cristoloveanu, S.; Ionica, I.

2018-05-01

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

The tsunami source area of the 2003 Tokachi-oki earthquake estimated from tsunami travel times and its relationship to the 1952 Tokachi-oki earthquake

USGS Publications Warehouse

Hirata, K.; Tanioka, Y.; Satake, K.; Yamaki, S.; Geist, E.L.

2004-01-01

We estimate the tsunami source area of the 2003 Tokachi-oki earthquake (Mw 8.0) from observed tsunami travel times at 17 Japanese tide gauge stations. The estimated tsunami source area (???1.4 ?? 104 km2) coincides with the western-half of the ocean-bottom deformation area (???2.52 ?? 104 km2) of the 1952 Tokachi-oki earthquake (Mw 8.1), previously inferred from tsunami waveform inversion. This suggests that the 2003 event ruptured only the western-half of the 1952 rupture extent. Geographical distribution of the maximum tsunami heights in 2003 differs significantly from that of the 1952 tsunami, supporting this hypothesis. Analysis of first-peak tsunami travel times indicates that a major uplift of the ocean-bottom occurred approximately 30 km to the NNW of the mainshock epicenter, just above a major asperity inferred from seismic waveform inversion. Copyright ?? The Society of Geomagnetism and Earth, Planetary and Space Sciences (SGEPSS); The Seismological Society of Japan; The Volcanological Society of Japan; The Geodetic Society of Japan; The Japanese Society for Planetary Sciences.

Integration of a UV curable polymer lens and MUMPs structures on a SOI optical bench

NASA Astrophysics Data System (ADS)

Hsieh, Jerwei; Hsiao, Sheng-Yi; Lai, Chun-Feng; Fang, Weileun

2007-08-01

This work presents the design concept of integrating a polymer lens, poly-Si MUMPs and single-crystal-silicon HARM structures on a SOI wafer to form a silicon optical bench. This approach enables the monolithic integration of various optical components on the wafer so as to improve the design flexibility of the silicon optical bench. Fabrication processes, including surface and bulk micromachining on the SOI wafer, have been established to realize bi-convex spherical polymer lenses with in-plane as well as out-of-plane optical axes. In addition, a micro device consisting of an in-plane polymer lens, a thick fiber holder and a mechanical shutter driven by an electrothermal actuator is also demonstrated using the present approach. In summary, this study significantly improves the design flexibility as well as the functions of SiOBs.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Performance analysis of SOI MOSFET with rectangular recessed channel

NASA Astrophysics Data System (ADS)

Singh, M.; Mishra, S.; Mohanty, S. S.; Mishra, G. P.

2016-03-01

In this paper a two dimensional (2D) rectangular recessed channel-silicon on insulator metal oxide semiconductor field effect transistor (RRC-SOI MOSFET), using the concept of groove between source and drain regions, which is one of the channel engineering technique to suppress the short channel effect (SCE). This suppression is mainly due to corner potential barrier of the groove and the simulation is carried out by using ATLAS 2D device simulator. To have further improvement of SCE in RRC-SOI MOSFET, three more devices are designed by using dual material gate (DMG) and gate dielectric technique, which results in formation of devices i.e. DMRRC-SOI,MLSMRRC-SOI, MLDMRRC-SOI MOSFET. The effect of different structures of RRC-SOI on AC and RF parameters are investigated and the importance of these devices over RRC MOSFET regarding short channel effect is analyzed.

Characterization of ultrathin SOI film and application to short channel MOSFETs.

PubMed

Tang, Xiaohui; Reckinger, Nicolas; Larrieu, Guilhem; Dubois, Emmanuel; Flandre, Denis; Raskin, Jean-Pierre; Nysten, Bernard; Jonas, Alain M; Bayot, Vincent

2008-04-23

In this study, a very dilute solution (NH(4)OH:H(2)O(2):H(2)O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s(-1) based on the self-limited etching speed of the solution. The thickness uniformity of the thin film, evaluated by spectroscopic ellipsometry and by high-resolution x-ray reflectivity, remains constant through the thinning process. Moreover, the film roughness, analyzed by atomic force microscopy, slightly improves during the thinning process. The residual stress in the thin film is much smaller than that obtained by sacrificial oxidation. Mobility, measured by means of a bridge-type Hall bar on 15 nm film, is not significantly reduced compared to the value of bulk silicon. Finally, the thinned SOI wafers were used to fabricate Schottky-barrier metal-oxide-semiconductor field-effect transistors with a gate length down to 30 nm, featuring state-of-the-art current drive performance.

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

NASA Astrophysics Data System (ADS)

Dupré, C.; Ernst, T.; Hartmann, J.-M.; Andrieu, F.; Barnes, J.-P.; Rivallin, P.; Faynot, O.; Deleonibus, S.; Fazzini, P. F.; Claverie, A.; Cristoloveanu, S.; Ghibaudo, G.; Cristiano, F.

2007-11-01

Based on electrical measurements and transmission electron microscopy (TEM) imaging, we propose an explanation for the electron and hole mobility degradation with gate length reduction in metal-oxide-semiconductor field effect transistors (MOSFETs). We demonstrate that ion implantation, normally used for source/drain doping, is responsible for transport degradation for short-channel devices. Implantation impact on electrons and holes mobility was investigated both on silicon-on-insulator (SOI) and tensile strained silicon-on-insulator (sSOI) substrates. Wafers with ultrathin Si films (from 8 to 35 nm) were Ge implanted at 3 keV and various concentrations (from 5×1014 to 2×1015 atoms cm-2), then annealed at 600 °C for 1 h. Secondary ion mass spectrometry enabled us to quantify the Ge-implanted atoms concentrations. The end-of-range defects impact on mobility was investigated with the pseudo-MOSFET technique. Measurements showed a mobility decrease as the implantation dose increased. We demonstrated that sSOI mobility is more sensitive to implantation than SOI mobility, without any implantation-induced strain relaxation in sSOI (checked using the ultraviolet Raman technique). A 36% (25%) holes (electrons) mobility degradation was measured for sSOI, while SOI presented a 21% mobility degradation for holes and 5% for electrons. Finally, the electrical results were compared with morphological studies. Plan-view TEM showed the presence of interstitial defects formed during ion implantation and annealing. The defect density was estimated to be two times higher in sSOI than in SOI, which is in full agreement with electrical results mentioned before. The results are relevant for the optimization of the source and drain regions of advanced nanoscale SOI and sSOI transistors.

A novel nanoscale SOI MOSFET by embedding undoped region for improving self-heating effect

NASA Astrophysics Data System (ADS)

Ghaffari, Majid; Orouji, Ali A.

2018-06-01

Because of the low thermal conductivity of the SiO2 (oxide), the Buried Oxide (BOX) layer in a Silicon-On-Insulator Metal-Oxide Semiconductor Field-Effect Transistor (SOI MOSFET) prevents heat dissipation in the silicon layer and causes increase in the device lattice temperature. In this paper, a new technique is proposed for reducing Self-Heating Effects (SHEs). The key idea in the proposed structure is using a Silicon undoped Region (SR) in the nanoscale SOI MOSFET under the drain and channel regions in order to decrease the SHE. The novel transistor is named Silicon undoped Region SOI-MOSFET (SR-SOI). Due to the embedded silicon undoped region in the suitable place, the proposed structure has decreased the device lattice temperature. The location and dimensions of the proposed region have been carefully optimized to achieve the best results. This work has explored enhancement such as decreased maximum lattice temperature, increased electron mobility, increased drain current, lower DC drain conductance and higher DC transconductance and also decreased bandgap energy variations. Also, for modeling of the structure in the SPICE tools, the main characterizations have been extracted such as thermal resistance (RTH), thermal capacitance (CTH), and SHE characteristic frequency (fTH). All parameters are extracted in relation with the AC operation indicate excellent performance of the SR-SOI device. The results show that proposed region is a suitable alternative to oxide as a part of the buried oxide layer in SOI structures and has better performance in high temperature. Using two-dimensional (2-D) and two-carrier device simulation is done comparison of the SR-SOI structure with a Conventional SOI (C-SOI). As a result, the SR-SOI device can be regarded as a useful substitution for the C-SOI device in nanoscale integrated circuits as a reliable device.

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology.

PubMed

Malits, Maria; Nemirovsky, Yael

2017-07-29

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode's sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode's perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor's channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate "on-line" temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode's small area and perimeter causes a high 1/ f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing.

Optical MEMS platform for low-cost on-chip integration of planar light circuits and optical switching

NASA Astrophysics Data System (ADS)

German, Kristine A.; Kubby, Joel; Chen, Jingkuang; Diehl, James; Feinberg, Kathleen; Gulvin, Peter; Herko, Larry; Jia, Nancy; Lin, Pinyen; Liu, Xueyuan; Ma, Jun; Meyers, John; Nystrom, Peter; Wang, Yao Rong

2004-07-01

Xerox Corporation has developed a technology platform for on-chip integration of latching MEMS optical waveguide switches and Planar Light Circuit (PLC) components using a Silicon On Insulator (SOI) based process. To illustrate the current state of this new technology platform, working prototypes of a Reconfigurable Optical Add/Drop Multiplexer (ROADM) and a l-router will be presented along with details of the integrated latching MEMS optical switches. On-chip integration of optical switches and PLCs can greatly reduce the size, manufacturing cost and operating cost of multi-component optical equipment. It is anticipated that low-cost, low-overhead optical network products will accelerate the migration of functions and services from high-cost long-haul markets to price sensitive markets, including networks for metropolitan areas and fiber to the home. Compared to the more common silica-on-silicon PLC technology, the high index of refraction of silicon waveguides created in the SOI device layer enables miniaturization of optical components, thereby increasing yield and decreasing cost projections. The latching SOI MEMS switches feature moving waveguides, and are advantaged across multiple attributes relative to alternative switching technologies, such as thermal optical switches and polymer switches. The SOI process employed was jointly developed under the auspice of the NIST APT program in partnership with Coventor, Corning IntelliSense Corp., and MicroScan Systems to enable fabrication of a broad range of free space and guided wave MicroOptoElectroMechanical Systems (MOEMS).

Strong Ground Motion Generation during the 2011 Tohoku-Oki Earthquake

NASA Astrophysics Data System (ADS)

Asano, K.; Iwata, T.

2011-12-01

Strong ground motions during the 2011 Tohoku-Oki earthquake (Mw9.0) were densely observed by the strong motion observation networks all over Japan. Seeing the acceleration and velocity waveforms observed at strong stations in northeast Japan along the source region, those ground motions are characterized by plural wave packets with duration of about twenty seconds. Particularly, two wave packets separated by about fifty seconds could be found on the records in the northern part of the damaged area, whereas only one significant wave packets could be recognized on the records in the southern part of the damaged area. The record section shows four isolated wave packets propagating from different locations to north and south, and it gives us a hint of the strong motion generation process on the source fault which is related to the heterogeneous rupture process in the scale of tens of kilometers. In order to solve it, we assume that each isolated wave packet is contributed by the corresponding strong motion generation area (SMGA). It is a source patch whose slip velocity is larger than off the area (Miyake et al., 2003). That is, the source model of the 2011 Tohoku-Oki earthquake consists of four SMGAs. The SMGA source model has succeeded in reproducing broadband strong ground motions for past subduction-zone events (e.g., Suzuki and Iwata, 2007). The target frequency range is set to be 0.1-10 Hz in this study as this range is significantly related to seismic damage generation to general man-made structures. First, we identified the rupture starting points of each SMGA by picking up the onset of individual packets. The source fault plane is set following the GCMT solution. The first two SMGAs were located approximately 70 km and 30 km west of the hypocenter. The third and forth SMGAs were located approximately 160 km and 230 km southwest of the hypocenter. Then, the model parameters (size, rise time, stress drop, rupture velocity, rupture propagation pattern) of these four SMGAs were determined by waveform modeling using the empirical Green's function method (Irikura, 1986). The first and second SMGAs are located close to each other, and they are partially overlapped though the difference in the rupture time between them is more than 40 s. Those two SMGA appear to be included in the source region of the past repeating Miyagi-Oki subduction-zone event in 1936. The third and fourth SMGAs appear to be located in the source region of the past Fukushima-Oki events in 1938. Each of Those regions has been expected to cause next major earthquakes in the long-term evaluation. The obtained source model explains the acceleration, velocity, and displacement time histories in the target frequency range at most stations well. All of four SMGAs exist apparently outside of the large slip area along the trench east of the hypocenter, which was estimated by the seismic, geodetic, and tsunami inversion analyses, and this large slip zone near the trench does not contribute to strong motion much. At this point, we can conclude that the 2011 Tohoku-Oki earthquake has a possibility to be a complex event rupturing multiple preexisting asperities in terms of strong ground motion generation. It should be helpful to validate and improve the applicability of the strong motion prediction recipe for great subduction-zone earthquakes.

The Bridges SOI Model School Program at Palo Verde School, Palo Verde, Arizona.

ERIC Educational Resources Information Center

Stock, William A.; DiSalvo, Pamela M.

The Bridges SOI Model School Program is an educational service based upon the SOI (Structure of Intellect) Model School curriculum. For the middle seven months of the academic year, all students in the program complete brief daily exercises that develop specific cognitive skills delineated in the SOI model. Additionally, intensive individual…

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

NASA Technical Reports Server (NTRS)

Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

2006-01-01

Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

Contribution of Satellite Gravimetry to Understanding Seismic Source Processes of the 2011 Tohoku-Oki Earthquake

NASA Technical Reports Server (NTRS)

Han, Shin-Chan; Sauber, Jeanne; Riva, Riccardo

2011-01-01

The 2011 great Tohoku-Oki earthquake, apart from shaking the ground, perturbed the motions of satellites orbiting some hundreds km away above the ground, such as GRACE, due to coseismic change in the gravity field. Significant changes in inter-satellite distance were observed after the earthquake. These unconventional satellite measurements were inverted to examine the earthquake source processes from a radically different perspective that complements the analyses of seismic and geodetic ground recordings. We found the average slip located up-dip of the hypocenter but within the lower crust, as characterized by a limited range of bulk and shear moduli. The GRACE data constrained a group of earthquake source parameters that yield increasing dip (7-16 degrees plus or minus 2 degrees) and, simultaneously, decreasing moment magnitude (9.17-9.02 plus or minus 0.04) with increasing source depth (15-24 kilometers). The GRACE solution includes the cumulative moment released over a month and demonstrates a unique view of the long-wavelength gravimetric response to all mass redistribution processes associated with the dynamic rupture and short-term postseismic mechanisms to improve our understanding of the physics of megathrusts.

ENSO and hydrologic extremes in the western United States

USGS Publications Warehouse

Cayan, D.R.; Redmond, K.T.; Riddle, L.G.

1999-01-01

Frequency distributions of daily precipitation in winter and daily stream flow from late winter to early summer, at several hundred sites in the western United States, exhibit strong and systematic responses to the two phases of ENSO. Most of the stream flows considered are driven by snowmelt. The Southern Oscillation index (SOI) is used as the ENSO phase indicator. Both modest (median) and larger (90th percentile) events were considered. In years with negative SOI values (El Nino), days with high daily precipitation and stream flow are more frequent than average over the Southwest and less frequent over the Northwest. During years with positive SOI values (La Nina), a nearly opposite pattern is seen. A more pronounced increase is seen in the number of days exceeding climatological 90th percentile values than in the number exceeding climatological 50th percentile values, for both precipitation and stream flow. Stream flow responses to ENSO extremes are accentuated over precipitation responses. Evidence suggests that the mechanism for this amplification involves ENSO-phase differences in the persistence and duration of wet episodes, affecting the efficiency of the process by which precipitation is converted to runoff. The SOI leads the precipitation events by several months, and hydrologic lags (mostly through snowmelt) dealy the stream flow response by several more months. The combined 6-12 month predictive aspect of this relationship should be of significant benefit in responding to flood (or drought) risk and in improving overall water management in the western states.Frequency distributions of daily precipitation in winter and daily stream flow from late winter to early summer, at several hundred sites in the western United States, exhibit strong and systematic responses to the two phases of ENSO. Most of the stream flows considered are driven by snowmelt. The Southern Oscillation index (SOI) is used as the ENSO phase indicator. Both modest (median) and larger (90th percentile) events were considered. In years with negative SOI values (El Nino), days with high daily precipitation and stream flow are more frequent than average over the Southwest and less frequent over the Northwest. During years with positive SOI values (La Nina), a nearly opposite pattern is seen. A more pronounced increase is seen in the number of days exceeding climatological 90th percentile values than in the number exceeding climatological 50th percentile values, for both precipitation and stream flow. Stream flow responses to ENSO extremes are accentuated over precipitation responses. Evidence suggests that the mechanism for this amplification involves ENSO-phase differences in the persistence and duration of wet episodes, affecting the efficiency of the process by which precipitation is converted to runoff. The SOI leads the precipitation events by several months, and hydrologic lags (mostly through snowmelt) delay the stream flow response by several more months. The combined 6-12-month predictive aspect of this relationship should be of significant benefit in responding to flood (or drought) risk and in improving overall water management in the western states.

Implementation of a Readout Circuit on SOI Technology for the Signal Conditioning of a Neutron Detector in Harsh Environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ben Krit, S.; Coulie-Castellani, K.; Rahajandraibe, W.

2015-07-01

A transistor level implementation of the analog block of a readout system on SOI process is presented here. This system is dedicated to the signal conditioning of a neutron detector in harsh environment. The different parts of the readout circuits are defined. The harsh environment constraints (crossing particle effect, high temperatures) are also detailed and modeled in the circuit in order to test and evaluate the characteristics of the designed block when working under these conditions. (authors)

Episodic slow slip events in the Japan subduction zone before the 2011 Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Ito, Y.; Hino, R.; Kido, M.; Fujimoto, H.; Osada, Y.; Inazu, D.; Ohta, Y.; Iinuma, T.; Ohzono, M.; Mishina, M.; Miura, S.; Suzuki, K.; Tsuji, T.; Ashi, J.

2012-12-01

We describe two transient slow slip events that occurred before the 2011 Tohoku-Oki earthquake. The first transient crustal deformation, which occurred over a period of a week in November 2008, was recorded simultaneously using ocean-bottom pressure gauges and an on-shore volumetric strainmeter; this deformation has been interpreted as being an M6.8 episodic slow slip event. The second had a duration exceeding 1 month and was observed in February 2011, just before the 2011 Tohoku-Oki earthquake; the moment magnitude of this event reached 7.0. The two events preceded interplate earthquakes of magnitudes M6.1 (December 2008) and M7.3 (March 9, 2011), respectively; the latter is the largest foreshock of the 2011 Tohoku-Oki earthquake. Our findings indicate that these slow slip events induced increases in shear stress, which in turn triggered the interplate earthquakes. The slow slip event source area on the fault is also located within the downdip portion of the huge-coseismic-slip area of the 2011 earthquake. This demonstrates episodic slow slip and seismic behavior occurring on the same portions of the megathrust fault, suggesting that the faults undergo slip in slow slip events can also rupture seismically.

Episodic slow slip events in the Japan subduction zone before the 2011 Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Ito, Yoshihiro; Hino, Ryota; Kido, Motoyuki; Fujimoto, Hiromi; Osada, Yukihito; Inazu, Daisuke; Ohta, Yusaku; Iinuma, Takeshi; Ohzono, Mako; Miura, Satoshi; Mishina, Masaaki; Suzuki, Kensuke; Tsuji, Takeshi; Ashi, Juichiro

2013-07-01

We describe two transient slow slip events that occurred before the 2011 Tohoku-Oki earthquake. The first transient crustal deformation, which occurred over a period of a week in November 2008, was recorded simultaneously using ocean-bottom pressure gauges and an on-shore volumetric strainmeter; this deformation has been interpreted as being an M6.8 episodic slow slip event. The second had a duration exceeding 1 month and was observed in February 2011, just before the 2011 Tohoku-Oki earthquake; the moment magnitude of this event reached 7.0. The two events preceded interplate earthquakes of magnitudes M6.1 (December 2008) and M7.3 (March 9, 2011), respectively; the latter is the largest foreshock of the 2011 Tohoku-Oki earthquake. Our findings indicate that these slow slip events induced increases in shear stress, which in turn triggered the interplate earthquakes. The slow slip event source area on the fault is also located within the downdip portion of the huge-coseismic-slip area of the 2011 earthquake. This demonstrates episodic slow slip and seismic behavior occurring on the same portions of the megathrust fault, suggesting that the faults undergo slip in slow slip events can also rupture seismically.

Multisclae heterogeneity of the 2011 Tohoku-oki earthquake by inversion

NASA Astrophysics Data System (ADS)

Aochi, H.; Ulrich, T.; Cornier, G.

2012-12-01

Earthquake fault heterogeneity is often studied on a set of subfaults in kinematic inversion, while it is sometimes described with spatially localized geometry. Aochi and Ide (EPS, 2011) and Ide and Aochi (submitted to Pageoph and AGU, 2012) apply a concept of multi-scale heterogeneity to simulate the dynamic rupture process of the 2011 Tohoku-oki earthquake, introducing circular patches of different dimension in fault fracture energy distribution. Previously the patches are given by the past moderate earthquakes in this region, and this seems to be consistent with the evolution process of this mega earthquake, although a few patches, in particular, the largest patch, had not been known previously. In this study, we try to identify patches by inversion. As demonstrated in several earthquakes including the 2010 Maule (M8.8) earthquake, it is possible to indentify two asperities of ellipse kinematically or dynamically (e.g. Ruiz and Madariaga, 2011, and so on). In the successful examples, different asperities are rather visible, separated in space. However the Tohoku-oki earthquake has hierarchical structure of heterogeneity. We apply the Genetic Algorithm to inverse the model parameters from the ground motions (K-net and Kik-net from NIED) and the high sampling GPS (GSI). Starting from low frequency ranges (> 50 seconds), we obtain an ellipse corresponding to M9 event located around the hypocenter, coherent with the previous result by Madariaga et al. (pers. comm.). However it is difficult to identify the second smaller with few constraints. This is mainly because the largest covers the entire rupture area and any smaller patch improves the fitting only for the closer stations. Again, this needs to introduce the multi-scale concept in inversion procedure. Instead of finding the largest one at first, we have to start to extract rather smaller moderate patches from the beginning of the record, following the rupture process.

Novel detectors for silicon based microdosimetry, their concepts and applications

NASA Astrophysics Data System (ADS)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Concurrent rib and pelvic fractures as an indicator of solid abdominal organ injury.

PubMed

Al-Hassani, Ammar; Afifi, Ibrahim; Abdelrahman, Husham; El-Menyar, Ayman; Almadani, Ammar; Recicar, Jan; Al-Thani, Hassan; Maull, Kimball; Latifi, Rifat

2013-01-01

To study the association of solid organ injuries (SOIs) in patients with concurrent rib and pelvic fractures. Retrospective analysis of prospectively collected data from November 2007 to May 2010. Patients' demographics, mechanism of injury, Injury severity scoring, pelvic fracture, and SOIs were analyzed. Patients with SOIs were compared in rib fractures with and without pelvic fracture. The study included 829 patients (460 with rib fractures ± pelvic fracture and 369 with pelvic fracture alone) with mean age of 35 ± 12.7 years. Motor vehicle crashes (45%) and falls from height (30%) were the most common mechanism of injury. The overall incidence of SOIs in this study was 22% (185/829). Further, 15% of patient with rib fractures had associated pelvic fracture. SOI was predominant in patients with concurrent rib fracture and pelvic fracture compared to ribs or pelvic fractures alone (42% vs. 26% vs. 15%, respectively, p = 0.02). Concurrent multiple rib fractures and pelvic fracture increases the risk of SOI compared to either group alone. Lower RFs and pelvic fracture had higher association for SOI and could be used as an early indicator of the presence of SOIs. Copyright © 2013 Surgical Associates Ltd. Published by Elsevier Ltd. All rights reserved.

Submicron mapping of strained silicon-on-insulator features induced

NASA Astrophysics Data System (ADS)

Murray, Conal E.; Sankarapandian, M.; Polvino, S. M.; Noyan, I. C.; Lai, B.; Cai, Z.

2007-04-01

Real-space maps of strain within silicon-on-insulator (SOI) features induced by adjacent, embedded shallow-trench-isolation (STI) SiO2 regions were obtained using x-ray microbeam diffraction. The quantitative strain mapping indicated that the SOI strain was largest at the SOI/STI interface and decreased as a function of distance from this interface. An out-of-plane residual strain of approximately -31μɛ was observed in the blanket regions of the SOI. A comparison of the depth-averaged strain distributions to the strain profiles calculated from an Eshelby inclusion model indicated an equivalent eigenstrain of -0.55% in the STI regions acting on the SOI features.

Method to improve commercial bonded SOI material

DOEpatents

Maris, Humphrey John; Sadana, Devendra Kumar

2000-07-11

A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications.

PubMed

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-11-04

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA-0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C-1.79 mV/°C in the range 20-300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(V excit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min) -0.1 in the tested range of 0-4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries.

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †

PubMed Central

Mansoor, Mohtashim; Haneef, Ibraheem; Akhtar, Suhail; Rafiq, Muhammad Aftab; De Luca, Andrea; Ali, Syed Zeeshan; Udrea, Florin

2016-01-01

An SOI CMOS multi-sensor MEMS chip, which can simultaneously measure temperature, pressure and flow rate, has been reported. The multi-sensor chip has been designed keeping in view the requirements of researchers interested in experimental fluid dynamics. The chip contains ten thermodiodes (temperature sensors), a piezoresistive-type pressure sensor and nine hot film-based flow rate sensors fabricated within the oxide layer of the SOI wafers. The silicon dioxide layers with embedded sensors are relieved from the substrate as membranes with the help of a single DRIE step after chip fabrication from a commercial CMOS foundry. Very dense sensor packing per unit area of the chip has been enabled by using technologies/processes like SOI, CMOS and DRIE. Independent apparatuses were used for the characterization of each sensor. With a drive current of 10 µA–0.1 µA, the thermodiodes exhibited sensitivities of 1.41 mV/°C–1.79 mV/°C in the range 20–300 °C. The sensitivity of the pressure sensor was 0.0686 mV/(Vexcit kPa) with a non-linearity of 0.25% between 0 and 69 kPa above ambient pressure. Packaged in a micro-channel, the flow rate sensor has a linearized sensitivity of 17.3 mV/(L/min)−0.1 in the tested range of 0–4.7 L/min. The multi-sensor chip can be used for simultaneous measurement of fluid pressure, temperature and flow rate in fluidic experiments and aerospace/automotive/biomedical/process industries. PMID:27827904

High-frequency source radiation during the 2011 Tohoku-Oki earthquake, Japan, inferred from KiK-net strong-motion seismograms

NASA Astrophysics Data System (ADS)

Kumagai, Hiroyuki; Pulido, Nelson; Fukuyama, Eiichi; Aoi, Shin

2013-01-01

investigate source processes of the 2011 Tohoku-Oki earthquake, we utilized a source location method using high-frequency (5-10 Hz) seismic amplitudes. In this method, we assumed far-field isotropic radiation of S waves, and conducted a spatial grid search to find the best fitting source locations along the subducted slab in each successive time window. Our application of the method to the Tohoku-Oki earthquake resulted in artifact source locations at shallow depths near the trench caused by limited station coverage and noise effects. We then assumed various source node distributions along the plate, and found that the observed seismograms were most reasonably explained when assuming deep source nodes. This result suggests that the high-frequency seismic waves were radiated at deeper depths during the earthquake, a feature which is consistent with results obtained from teleseismic back-projection and strong-motion source model studies. We identified three high-frequency subevents, and compared them with the moment-rate function estimated from low-frequency seismograms. Our comparison indicated that no significant moment release occurred during the first high-frequency subevent and the largest moment-release pulse occurred almost simultaneously with the second high-frequency subevent. We speculated that the initial slow rupture propagated bilaterally from the hypocenter toward the land and trench. The landward subshear rupture propagation consisted of three successive high-frequency subevents. The trenchward propagation ruptured the strong asperity and released the largest moment near the trench.

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

NASA Technical Reports Server (NTRS)

Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

2006-01-01

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology

PubMed Central

Malits, Maria; Nemirovsky, Yael

2017-01-01

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode’s sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode’s perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor’s channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate “on-line” temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode’s small area and perimeter causes a high 1/f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing. PMID:28758932

Design, fabrication, and characteristics of microheaters with low consumption power using SDB SOI membrane and trench structures

NASA Astrophysics Data System (ADS)

Chung, Gwiy-Sang; Choi, Sung-Kyu; Nam, Hoy-Duck

2001-10-01

This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal MEMS (micro electro mechanical system) applications using SDB and SOI membranes and trench structures. The micro-heater is based on a thermal measurement principle and contains for thermal isolation regions a 10 micrometers thick Si membrane with oxide-filled trenches in the SOI membrane rim. The micro- heater was fabricated with Pt-RTD on the same substrate by using MgO as medium layer. The thermal characteristics of the micro-heater with the SOI membrane is 280 degree(s)C at input power 0.9 W; for the SOI membrane with 10 trenches, it is 580 degree(s)C due to reduction of the external thermal loss. Consequently, the micro-heater with trenches in SOI membrane rim provides a powerful and versatile alternative technology for improving the performance of micro-thermal sensors and actuators.

High-temperature microelectromechanical pressure sensors based on a SOI heterostructure for an electronic automatic aircraft engine control system

NASA Astrophysics Data System (ADS)

Sokolov, Leonid V.

2010-08-01

There is a need of measuring distributed pressure on the aircraft engine inlet with high precision within a wide operating temperature range in the severe environment to improve the efficiency of aircraft engine control. The basic solutions and principles of designing high-temperature (to 523K) microelectromechanical pressure sensors based on a membrane-type SOI heterostructure with a monolithic integral tensoframe (MEMS-SOIMT) are proposed in accordance with the developed concept, which excludes the use of electric p-n junctions in semiconductor microelectromechanical sensors. The MEMS-SOIMT technology relies on the group processes of microelectronics and micromechanics for high-precision microprofiling of a three-dimension micromechanical structure, which exclude high-temperature silicon doping processes.

Structure and composition of the plate-boundary slip zone for the 2011 Tohoku-Oki earthquake.

PubMed

Chester, Frederick M; Rowe, Christie; Ujiie, Kohtaro; Kirkpatrick, James; Regalla, Christine; Remitti, Francesca; Moore, J Casey; Toy, Virginia; Wolfson-Schwehr, Monica; Bose, Santanu; Kameda, Jun; Mori, James J; Brodsky, Emily E; Eguchi, Nobuhisa; Toczko, Sean

2013-12-06

The mechanics of great subduction earthquakes are influenced by the frictional properties, structure, and composition of the plate-boundary fault. We present observations of the structure and composition of the shallow source fault of the 2011 Tohoku-Oki earthquake and tsunami from boreholes drilled by the Integrated Ocean Drilling Program Expedition 343 and 343T. Logging-while-drilling and core-sample observations show a single major plate-boundary fault accommodated the large slip of the Tohoku-Oki earthquake rupture, as well as nearly all the cumulative interplate motion at the drill site. The localization of deformation onto a limited thickness (less than 5 meters) of pelagic clay is the defining characteristic of the shallow earthquake fault, suggesting that the pelagic clay may be a regionally important control on tsunamigenic earthquakes.

BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology

NASA Astrophysics Data System (ADS)

Galy, Philippe; Athanasiou, S.; Cristoloveanu, S.

2016-01-01

We evaluate the Electro-Static Discharge (ESD) protection capability of BIpolar MOS (BIMOS) transistors integrated in ultrathin silicon film for 28 nm Fully Depleted SOI (FD-SOI) Ultra Thin Body and BOX (UTBB) high-k metal gate technology. Using as a reference our measurements in hybrid bulk-SOI structures, we extend the BIMOS design towards the ultrathin silicon film. Detailed study and pragmatic evaluations are done based on 3D TCAD simulation with standard physical models using Average Current Slope (ACS) method and quasi-static DC stress (Average Voltage Slope AVS method). These preliminary 3D TACD results are very encouraging in terms of ESD protection efficiency in advanced FD-SOI CMOS.

Soft-light overhead illumination systems improve laparoscopic task performance.

PubMed

Takai, Akihiro; Takada, Yasutsugu; Motomura, Hideki; Teramukai, Satoshi

2014-02-01

The aim of this study was to evaluate the impact of attached shadow cues for laparoscopic task performance. We developed a soft-light overhead illumination system (SOIS) that produced attached shadows on objects. We compared results using the SOIS with those using a conventional illumination system with regard to laparoscopic experience and laparoscope-to-target distances (LTDs). Forty-two medical students and 23 surgeons participated in the study. A peg transfer task (LTD, 120 mm) for students and surgeons, and a suture removal task (LTD, 30 mm) for students were performed. Illumination systems were randomly assigned to each task. Endpoints were: total number of peg transfers; percentage of peg-dropping errors; and total execution time for suture removal. After the task, participants filled out a questionnaire on their preference for a particular illumination system. Total number of peg transfers was greater with the SOIS for both students and surgeons. Percentage of peg-dropping errors for surgeons was lower with the SOIS. Total execution time for suture removal was shorter with the SOIS. Forty-five participants (69% in total) evaluated the SOIS for easier task performance. The present results confirm that the SOIS improves laparoscopic task performance, regardless of previous laparoscopic experience or LTD.

Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices

NASA Astrophysics Data System (ADS)

Li, Zhibo; Wang, Mengqi; Fang, Xin; Li, Yajie; Zhou, Xuliang; Yu, Hongyan; Wang, Pengfei; Wang, Wei; Pan, Jiaoqing

2018-02-01

A direct epitaxy of III-V nanowires with InGaAs/InP multiple quantum wells on v-shaped trenches patterned silicon on insulator (SOI) substrates was realized by combining the standard semiconductor fabrication process with the aspect ratio trapping growth technique. Silicon thickness as well as the width and gap of each nanowire were carefully designed to accommodate essential optical properties and appropriate growth conditions. The III-V element ingredient, crystalline quality, and surface topography of the grown nanowires were characterized by X-ray diffraction spectroscopy, photoluminescence, and scanning electron microscope. Geometrical details and chemical information of multiple quantum wells were revealed by transmission electron microscopy and energy dispersive spectroscopy. Numerical simulations confirmed that the optical guided mode supported by one single nanowire was able to propagate 50 μm with ˜30% optical loss. This proposed integration scheme opens up an alternative pathway for future photonic integrations of III-V devices on the SOI platform at nanoscale.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshizumi, K.; Sasaki, A.; Kohda, M.

We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.

Asymptomatic Hepadnaviral Persistence and Its Consequences in the Woodchuck Model of Occult Hepatitis B Virus Infection

PubMed Central

Mulrooney-Cousins, Patricia M.; Michalak, Tomasz I.

2015-01-01

Woodchuck hepatitis virus (WHV) is molecularly and pathogenically closely related to hepatitis B virus (HBV). Both viruses display tropism towards hepatocytes and cells of the immune system and cause similar liver pathology, where acute hepatitis can progress to chronic hepatitis and to hepatocellular carcinoma (HCC). Two forms of occult hepadnaviral persistence were identified in the woodchuck-WHV model: secondary occult infection (SOI) and primary occult infection (POI). SOI occurs after resolution of a serologically apparent infection with hepatitis or after subclinical serologically evident virus exposure. POI is caused by small amounts of virus and progresses without serological infection markers, but the virus genome and its replication are detectable in the immune system and with time in the liver. SOI can be accompanied by minimal hepatitis, while the hallmark of POI is normal liver morphology. Nonetheless, HCC develops in about 20% of animals with SOI or POI within 3 to 5 years. The virus persists throughout the lifespan in both SOI and POI at serum levels rarely greater than 100 copies/mL, causes hepatitis and HCC when concentrated and administered to virus-naïve woodchucks. SOI is accompanied by virus-specific T and B cell immune responses, while only virus-specific T cells are detected in POI. SOI coincides with protection against reinfection, while POI does not and hepatitis develops after challenge with liver pathogenic doses >1000 virions. Both SOI and POI are associated with virus DNA integration into the liver and the immune system genomes. Overall, SOI and POI are two distinct forms of silent hepadnaviral persistence that share common characteristics. Here, we review findings from the woodchuck model and discuss the relevant observations made in human occult HBV infection (OBI). PMID:26623268

Asymptomatic Hepadnaviral Persistence and Its Consequences in the Woodchuck Model of Occult Hepatitis B Virus Infection.

PubMed

Mulrooney-Cousins, Patricia M; Michalak, Tomasz I

2015-09-28

Woodchuck hepatitis virus (WHV) is molecularly and pathogenically closely related to hepatitis B virus (HBV). Both viruses display tropism towards hepatocytes and cells of the immune system and cause similar liver pathology, where acute hepatitis can progress to chronic hepatitis and to hepatocellular carcinoma (HCC). Two forms of occult hepadnaviral persistence were identified in the woodchuck-WHV model: secondary occult infection (SOI) and primary occult infection (POI). SOI occurs after resolution of a serologically apparent infection with hepatitis or after subclinical serologically evident virus exposure. POI is caused by small amounts of virus and progresses without serological infection markers, but the virus genome and its replication are detectable in the immune system and with time in the liver. SOI can be accompanied by minimal hepatitis, while the hallmark of POI is normal liver morphology. Nonetheless, HCC develops in about 20% of animals with SOI or POI within 3 to 5 years. The virus persists throughout the lifespan in both SOI and POI at serum levels rarely greater than 100 copies/mL, causes hepatitis and HCC when concentrated and administered to virus-naïve woodchucks. SOI is accompanied by virus-specific T and B cell immune responses, while only virus-specific T cells are detected in POI. SOI coincides with protection against reinfection, while POI does not and hepatitis develops after challenge with liver pathogenic doses >1000 virions. Both SOI and POI are associated with virus DNA integration into the liver and the immune system genomes. Overall, SOI and POI are two distinct forms of silent hepadnaviral persistence that share common characteristics. Here, we review findings from the woodchuck model and discuss the relevant observations made in human occult HBV infection (OBI).

SiNOI and AlGaAs-on-SOI nonlinear circuits for continuum generation in Si photonics

NASA Astrophysics Data System (ADS)

El Dirani, Houssein; Monat, Christelle; Brision, Stéphane; Olivier, Nicolas; Jany, Christophe; Letartre, Xavier; Pu, Minhao; Girouard, Peter D.; Hagedorn Frandsen, Lars; Semenova, Elizaveta; Katsuo Oxenløwe, Leif; Yvind, Kresten; Sciancalepore, Corrado

2018-02-01

In this communication, we report on the design, fabrication, and testing of Silicon Nitride on Insulator (SiNOI) and Aluminum-Gallium-Arsenide (AlGaAs) on silicon-on-insulator (SOI) nonlinear photonic circuits for continuum generation in Silicon (Si) photonics. As recently demonstrated, the generation of frequency continua and supercontinua can be used to overcome the intrinsic limitations of nowadays silicon photonics notably concerning the heterogeneous integration of III-V on SOI lasers for datacom and telecom applications. By using the Kerr nonlinearity of monolithic silicon nitride and heterointegrated GaAs-based alloys on SOI, the generation of tens or even hundreds of new optical frequencies can be obtained in dispersion tailored waveguides, thus providing an all-optical alternative to the heterointegration of hundreds of standalone III-V on Si lasers. In our work, we present paths to energy-efficient continua generation on silicon photonics circuits. Notably, we demonstrate spectral broadening covering the full C-band via Kerrbased self-phase modulation in SiNOI nanowires featuring full process compatibility with Si photonic devices. Moreover, AlGaAs waveguides are heterointegrated on SOI in order to dramatically reduce (x1/10) thresholds in optical parametric oscillation and in the power required for supercontinuum generation under pulsed pumping. The manufacturing techniques allowing the monolithic co-integration of nonlinear functionalities on existing CMOS-compatible Si photonics for both active and passive components will be shown. Experimental evidence based on self-phase modulation show SiNOI and AlGaAs nanowires capable of generating wide-spanning frequency continua in the C-Band. This will pave the way for low-threshold power-efficient Kerr-based comb- and continuum- sources featuring compatibility with Si photonic integrated circuits (Si-PICs).

Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

NASA Astrophysics Data System (ADS)

Wu, Bin

Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

Sources of shaking and flooding during the Tohoku-Oki earthquake: a mixture of rupture styles

USGS Publications Warehouse

Wei, Shengji; Graves, Robert; Helmberger, Don; Avouac, Jean-Philippe; Jiang, Junle

2012-01-01

Modeling strong ground motions from great subduction zone earthquakes is one of the great challenges of computational seismology. To separate the rupture characteristics from complexities caused by 3D sub-surface geology requires an extraordinary data set such as provided by the recent Mw9.0 Tohoku-Oki earthquake. Here we combine deterministic inversion and dynamically guided forward simulation methods to model over one thousand high-rate GPS and strong motion observations from 0 to 0.25 Hz across the entire Honshu Island. Our results display distinct styles of rupture with a deeper generic interplate event (~Mw8.5) transitioning to a shallow tsunamigenic earthquake (~Mw9.0) at about 25 km depth in a process driven by a strong dynamic weakening mechanism, possibly thermal pressurization. This source model predicts many important features of the broad set of seismic, geodetic and seafloor observations providing a major advance in our understanding of such great natural hazards.

Source Mechanism and Near-field Characteristics of the 2011 Tohoku-oki Tsunami

NASA Astrophysics Data System (ADS)

Yamazaki, Y.; Cheung, K.; Lay, T.

2011-12-01

The Tohoku-oki great earthquake ruptured the megathrust fault offshore of Miyagi and Fukushima in Northeast Honshu with moment magnitude of Mw 9.0 on March 11, 2011, and generated strong shaking across the region. The resulting tsunami devastated the northeastern Japan coasts and damaged coastal infrastructure across the Pacific. The extensive global seismic networks, dense geodetic instruments, well-positioned buoys and wave gauges, and comprehensive runup records along the northeast Japan coasts provide datasets of unprecedented quality and coverage for investigation of the tsunami source mechanism and near-field wave characteristics. Our finite-source model reconstructs detailed source rupture processes by inversion of teleseismic P waves recorded around the globe. The finite-source solution is validated through comparison with the static displacements recoded at the ARIA (JPL-GSI) GPS stations and models obtained by inversion of high-rate GPS observations. The rupture model has two primary slip regions, near the hypocenter and along the trench; the maximum slip is about 60 m near the trench. Together with the low rupture velocity, the Tohoku-oki event has characteristics in common with tsunami earthquakes, although it ruptured across the entire megathrust. Superposition of the deformation of the subfaults from the planar fault model according to their rupture initiation and rise times specifies the seafloor vertical displacement and velocity for tsunami modeling. We reconstruct the 2011 Tohoku-oki tsunami from the time histories of the seafloor deformation using the dispersive long-wave model NEOWAVE (Non-hydrostatic Evolution of Ocean WAVEs). The computed results are compared with data from six GPS gauges and three wave gauges near the source at 120~200-m and 50-m water depth, as well as DART buoys positioned across the Pacific. The shock-capturing model reproduces near-shore tsunami bores and the runup data gathered by the 2011 Tohoku Earthquake Tsunami Joint Survey Group. Spectral analysis of the computed surface elevation reveals a series of resonance modes and areas prone to tsunami hazards. This case study improves our understanding of near-field tsunami waves and validates the modeling capability to predict their impacts for hazard mitigation and emergency management.

Fabricating with crystalline Si to improve superconducting detector performance

NASA Astrophysics Data System (ADS)

Beyer, A. D.; Hollister, M. I.; Sayers, J.; Frez, C. F.; Day, P. K.; Golwala, S. R.

2017-05-01

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ∼ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Mining spatial information to investigate the evolution of karst rocky desertification and its human driving forces in Changshun, China.

PubMed

Xu, Erqi; Zhang, Hongqi; Li, Mengxian

2013-08-01

The processes of karst rocky desertification (KRD) have been found to cause the most severe environmental degradation in southwestern China. Understanding the driving forces that cause KRD is essential for managing and restoring the areas that it impacts. Studies of the human driving forces of KRD are limited to the county level, a specific administrative unit in China; census data are acquired at this scale, which can lead to scale biases. Changshun County is studied here as a representative area and anthropogenic influences in the county are accounted for by using Euclidean distances for the proximity to roads and settlements. We propose a standard coefficient of human influence (SOI) that standardizes the Euclidean distances for different KRD transformations to compare the effects of human activities in different areas. In Changshun County, the individual influences of roads and settlements share similar characteristics. The SOIs of improved KRD transformation types are almost negative, but the SOIs of deteriorated types are nearly positive except for one form of KRD turning to the extremely severe KRD. The results indicated that the distribution and evolution of the KRD areas from 2000 to 2010 in Changshun were affected positively by human activities (e.g., KRD restoration projects) and also negatively (e.g., by intense and irrational land use). Our results demonstrate that the spatial techniques and SOI used in this study can effectively incorporate information concerning human influences and internal KRD transformations. This provides a suitable approach for studying the relationships between human activities and KRD processes at fine scales. Copyright © 2013 Elsevier B.V. All rights reserved.

Monolithic silicon-photonic platforms in state-of-the-art CMOS SOI processes [Invited].

PubMed

Stojanović, Vladimir; Ram, Rajeev J; Popović, Milos; Lin, Sen; Moazeni, Sajjad; Wade, Mark; Sun, Chen; Alloatti, Luca; Atabaki, Amir; Pavanello, Fabio; Mehta, Nandish; Bhargava, Pavan

2018-05-14

Integrating photonics with advanced electronics leverages transistor performance, process fidelity and package integration, to enable a new class of systems-on-a-chip for a variety of applications ranging from computing and communications to sensing and imaging. Monolithic silicon photonics is a promising solution to meet the energy efficiency, sensitivity, and cost requirements of these applications. In this review paper, we take a comprehensive view of the performance of the silicon-photonic technologies developed to date for photonic interconnect applications. We also present the latest performance and results of our "zero-change" silicon photonics platforms in 45 nm and 32 nm SOI CMOS. The results indicate that the 45 nm and 32 nm processes provide a "sweet-spot" for adding photonic capability and enhancing integrated system applications beyond the Moore-scaling, while being able to offload major communication tasks from more deeply-scaled compute and memory chips without complicated 3D integration approaches.

Fully Integrated, Miniature, High-Frequency Flow Probe Utilizing MEMS Leadless SOI Technology

NASA Technical Reports Server (NTRS)

Ned, Alex; Kurtz, Anthony; Shang, Tonghuo; Goodman, Scott; Giemette. Gera (d)

2013-01-01

This work focused on developing, fabricating, and fully calibrating a flowangle probe for aeronautics research by utilizing the latest microelectromechanical systems (MEMS), leadless silicon on insulator (SOI) sensor technology. While the concept of angle probes is not new, traditional devices had been relatively large due to fabrication constraints; often too large to resolve flow structures necessary for modern aeropropulsion measurements such as inlet flow distortions and vortices, secondary flows, etc. Mea surements of this kind demanded a new approach to probe design to achieve sizes on the order of 0.1 in. (.3 mm) diameter or smaller, and capable of meeting demanding requirements for accuracy and ruggedness. This approach invoked the use of stateof- the-art processing techniques to install SOI sensor chips directly onto the probe body, thus eliminating redundancy in sensor packaging and probe installation that have historically forced larger probe size. This also facilitated a better thermal match between the chip and its mount, improving stability and accuracy. Further, the leadless sensor technology with which the SOI sensing element is fabricated allows direct mounting and electrical interconnecting of the sensor to the probe body. This leadless technology allowed a rugged wire-out approach that is performed at the sensor length scale, thus achieving substantial sensor size reductions. The technology is inherently capable of high-frequency and high-accuracy performance in high temperatures and harsh environments.

Feature Extraction and Classification of Magnetic and EMI Data, Camp Beale, CA

DTIC Science & Technology

2012-05-01

and non-specialists. However, as part of ESTCP 1004 we are presently working on transitioning our inversion algorithms to an API that will be...10 0 Time (ms) Cell 663 - Target 1965 - Model 1 (SOI) ISO IVS 0.001 0.005 10 0 Time (ms) Cell 1104 - Target 2532 - Model 1 (SOI) ISO IVS...0.0 1 0.005 10 0 Time (ms) Cell 663 - Target 1965 - Model 1 (SOI) ISO IVS 0.0 1 0.005 10 0 Time (ms) Cell 1104 - Target 2532 - Model 1 (SOI

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

PubMed

Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

2007-08-01

Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

Southern Ocean Climate and Sea Ice Anomalies Associated with the Southern Oscillation.

NASA Astrophysics Data System (ADS)

Kwok, R.; Comiso, J. C.

2002-03-01

The anomalies in the climate and sea ice cover of the Southern Ocean and their relationships with the Southern Oscillation (SO) are investigated using a 17-yr dataset from 1982 to 1998. The polar climate anomalies are correlated with the Southern Oscillation index (SOI) and the composites of these anomalies are examined under the positive (SOI > 0), neutral (0 > SOI > 1), and negative (SOI < 1) phases of SOI. The climate dataset consists of sea level pressure, wind, surface air temperature, and sea surface temperature fields, while the sea ice dataset describes its extent, concentration, motion, and surface temperature. The analysis depicts, for the first time, the spatial variability in the relationship of the above variables with the SOI. The strongest correlation between the SOI and the polar climate anomalies are found in the Bellingshausen, Amundsen, and Ross Seas. The composite fields reveal anomalies that are organized in distinct large-scale spatial patterns with opposing polarities at the two extremes of SOI, and suggest oscillations that are closely linked to the SO. Within these sectors, positive (negative) phases of the SOI are generally associated with lower (higher) sea level pressure, cooler (warmer) surface air temperature, and cooler (warmer) sea surface temperature in these sectors. Associations between these climate anomalies and the behavior of the Antarctic sea ice cover are evident. Recent anomalies in the sea ice cover that are clearly associated with the SOI include the following: the record decrease in the sea ice extent in the Bellingshausen Sea from mid-1988 to early 1991; the relationship between Ross Sea SST and the ENSO signal, and reduced sea ice concentration in the Ross Sea; and the shortening of the ice season in the eastern Ross Sea, Amundsen Sea, far western Weddell Sea and lengthening of the ice season in the western Ross Sea, Bellinghausen Sea, and central Weddell Sea gyre during the period 1988-94. Four ENSO episodes over the last 17 years contributed to a negative mean in the SOI (0.5). In each of these episodes, significant retreats in ice cover of the Bellingshausen and Amundsen Seas were observed showing a unique association of this region of the Antarctic with the Southern Oscillation.

Widespread Triggering of Earthquakes in the Central US by the 2011 M9.0 Tohoku-Oki Earthquake

NASA Astrophysics Data System (ADS)

Rubinstein, J. L.; Savage, H. M.

2011-12-01

The strong shaking of the 2011 M9.0 off-Tohoku earthquake triggered tectonic tremor and earthquakes in many locations around the world. We analyze broadband records from the USARRAY to identify triggered seismicity in more than 10 different locations in the Central United States. We identify triggered events in many states including: Kansas, Nebraska, Arkansas, Minnesota, and Iowa. The locally triggered earthquakes are obscured in broadband records by the Tohoku-Oki mainshock but can be revealed with high-pass filtering. With the exception of one location (central Arkansas), the triggered seismicity occurred in regions that are seismically quiet. The coincidence of this seismicity with the Tohoku-Oki event suggests that these earthquakes were triggered. The triggered seismicity in Arkansas occurred in a region where there has been an active swarm of seismicity since August 2010. There are two lines of evidence to indicate that the seismicity in Arkansas is triggered instead of part of the swarm: (1) we observe two earthquakes that initiate coincident with the arrival of shear wave and Love wave; (2) the seismicity rate increased dramatically following the Tohoku-Oki mainshock. Our observations of widespread earthquake triggering in regions thought to be seismically quiet remind us that earthquakes can occur in most any location. Studying additional teleseismic events has the potential to reveal regions with a propensity for earthquake triggering.

Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Greene, Brian Joseph

Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525°C, and crystallized at temperatures near 570°C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5--2 mum) and/or heavy P doping (10 19--1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This dissertation discusses the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ≤ 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility are described.

Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

NASA Astrophysics Data System (ADS)

Pavanello, Marcelo Antonio; de Souza, Michelly; Ribeiro, Thales Augusto; Martino, João Antonio; Flandre, Denis

2016-11-01

This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.

Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers

NASA Astrophysics Data System (ADS)

Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko

2017-04-01

Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.

CCSDS SOIS Subnetwork Services: A First Reference Implementation

NASA Astrophysics Data System (ADS)

Gunes-Lasnet, S.; Notebaert, O.; Farges, P.-Y.; Fowell, S.

2008-08-01

The CCSDS SOIS working groups are developing a range of standards for spacecraft onboard interfaces with the intention of promoting reuse of hardware and software designs across a range of missions while enabling interoperability of onboard systems from diverse sources. The CCSDS SOIS working groups released in June 2007 their red books for both Subnetwork and application support layers. In order to allow the verification of these recommended standards and to pave the way for future implementation onboard spacecrafts, it is essential for these standards to be prototyped on a representative spacecraft platform, to provide valuable feed back to the SOIS working group. A first reference implementation of both Subnetwork and Application Support SOIS services over SpaceWire and Mil-Std-1553 bus is thus being realised by SciSys Ltd and Astrium under an ESA contract.

A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure

NASA Astrophysics Data System (ADS)

Tzeng, J. C.; Baerg, W.; Ting, C.; Siu, B.

The morphology of the novel self-aligned oxygen implanted SOI (SALOX SOI) [1] MOSFET was studied. The channel silicon of SALOX SOI was confirmed to be undamaged single crystal silicon and was connected with the substrate. Buried oxide formed by oxygen implantation in this SALOX SOI structure was shown by a cross section transmission electron micrograph (X-TEM) to be amorphous. The source/drain silicon on top of the buried oxide was single crystal, as shown by the transmission electron diffraction (TED) pattern. The source/drain regions were elevated due to the buried oxide volume expansion. A sharp silicon—silicon dioxide interface between the source/drain silicon and buried oxide was observed by Auger electron spectroscopy (AES). Well behaved n-MOS transistor current voltage characteristics were obtained and showed no I-V kink.

Evaluating a kinematic method for generating broadband ground motions for great subduction zone earthquakes: Application to the 2003 Mw 8.3 Tokachi‐Oki earthquake

USGS Publications Warehouse

Wirth, Erin A.; Frankel, Arthur; Vidale, John E.

2017-01-01

We compare broadband synthetic seismograms with recordings of the 2003 Mw">MwMw 8.3 Tokachi‐Oki earthquake to evaluate a compound rupture model, in which slip on the fault consists of multiple high‐stress‐drop asperities superimposed on a background slip distribution with longer rise times. Low‐frequency synthetics (<1  Hz"><1  Hz<1  Hz) are calculated using deterministic, 3D finite‐difference simulations and are combined with high‐frequency (>1  Hz">>1  Hz>1  Hz) stochastic synthetics using a matched filter at 1 Hz. We show that this compound rupture model and overall approach accurately reproduces waveform envelopes and observed response spectral accelerations (SAs) from the Tokachi‐Oki event. We find that sufficiently short subfault rise times (i.e., <∼1–2  s"><∼1–2  s<∼1–2  s) are necessary to reproduce energy ∼1  Hz">∼1  Hz∼1  Hz. This is achieved by either (1) including distinct subevents with short rise times, as may be suggested by the Tokachi‐Oki data, or (2) imposing a fast‐slip velocity over the entire rupture area. We also include a systematic study on the effects of varying several kinematic rupture parameters. We find that simulated strong ground motions are sensitive to the average rupture velocity and coherence of the rupture front, with more coherent ruptures yielding higher response SAs. We also assess the effects of varying the average slip velocity and the character (i.e., area, magnitude, and location) of high‐stress‐drop subevents. Even in the absence of precise constraints on these kinematic rupture parameters, our simulations still reproduce major features in the Tokachi‐Oki earthquake data, supporting its accuracy in modeling future large earthquakes.

Single-event upset in highly scaled commercial silicon-on-insulator PowerPc microprocessors

NASA Technical Reports Server (NTRS)

Irom, Farokh; Farmanesh, Farhad H.

2004-01-01

Single event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes, and core voltages. The results are compared with results for similar devices with build substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors discussed.

Sociosexuality from Argentina to Zimbabwe: a 48-nation study of sex, culture, and strategies of human mating.

PubMed

Schmitt, David P

2005-04-01

The Sociosexual Orientation Inventory (SOI; Simpson & Gangestad 1991) is a self-report measure of individual differences in human mating strategies. Low SOI scores signify that a person is sociosexually restricted, or follows a more monogamous mating strategy. High SOI scores indicate that an individual is unrestricted, or has a more promiscuous mating strategy. As part of the International Sexuality Description Project (ISDP), the SOI was translated from English into 25 additional languages and administered to a total sample of 14,059 people across 48 nations. Responses to the SOI were used to address four main issues. First, the psychometric properties of the SOI were examined in cross-cultural perspective. The SOI possessed adequate reliability and validity both within and across a diverse range of modem cultures. Second, theories concerning the systematic distribution of sociosexuality across cultures were evaluated. Both operational sex ratios and reproductively demanding environments related in evolutionary-predicted ways to national levels of sociosexuality. Third, sex differences in sociosexuality were generally large and demonstrated cross-cultural universality across the 48 nations of the ISDP, confirming several evolutionary theories of human mating. Fourth, sex differences in sociosexuality were significantly larger when reproductive environments were demanding but were reduced to more moderate levels in cultures with more political and economic gender equality. Implications for evolutionary and social role theories of human sexuality are discussed.

Pure gauge spin-orbit couplings

NASA Astrophysics Data System (ADS)

Shikakhwa, M. S.

2017-01-01

Planar systems with a general linear spin-orbit interaction (SOI) that can be cast in the form of a non-Abelian pure gauge field are investigated using the language of non-Abelian gauge field theory. A special class of these fields that, though a 2×2 matrix, are Abelian are seen to emerge and their general form is given. It is shown that the unitary transformation that gauges away these fields induces at the same time a rotation on the wave function about a fixed axis but with a space-dependent angle, both of which being characteristics of the SOI involved. The experimentally important case of equal-strength Rashba and Dresselhaus SOI (R+D SOI) is shown to fall within this special class of Abelian gauge fields, and the phenomenon of persistent spin helix (PSH) that emerges in the presence of this latter SOI in a plane is shown to fit naturally within the general formalism developed. The general formalism is also extended to the case of a particle confined to a ring. It is shown that the Hamiltonian on a ring in the presence of equal-strength R+D SOI is unitarily equivalent to that of a particle subject to only a spin-independent but θ-dependent potential with the unitary transformation relating the two being again the space-dependent rotation operator characteristic of R+D SOI.

Assessment of SOI Devices and Circuits at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik; Hammoud, Ahmad; Patterson, Richard L.

2007-01-01

Electronics designed for use in future NASA space exploration missions are expected to encounter extreme temperatures and wide thermal swings. Such missions include planetary surface exploration, bases, rovers, landers, orbiters, and satellites. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of mission. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical devices, circuits, and systems suitable for applications in deep space exploration missions and aerospace environment. Silicon-On-Insulator (SOI) technology has been under active consideration in the electronics industry for many years due to the advantages that it can provide in integrated circuit (IC) chips and computer processors. Faster switching, less power, radiationtolerance, reduced leakage, and high temp-erature capability are some of the benefits that are offered by using SOI-based devices. A few SOI circuits are available commercially. However, there is a noticeable interest in SOI technology for different applications. Very little data, however, exist on the performance of such circuits under cryogenic temperatures. In this work, the performance of SOI integrated circuits, evaluated under low temperature and thermal cycling, are reported. In particular, three examples of SOI circuits that have been tested for operation at low at temperatures are given. These circuits are SOI operational amplifiers, timers and power MOSFET drivers. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these circuits for use in space exploration missions at cryogenic temperatures. The findings are useful to mission planners and circuit designers so that proper selection of electronic parts can be made, and risk assessment can be established for such circuits for use in space missions.

Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

NASA Astrophysics Data System (ADS)

Hiti, B.; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-01

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1× 1016 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5× 1014 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.

Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

DOEpatents

Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

2001-01-01

A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

SOI technology for power management in automotive and industrial applications

NASA Astrophysics Data System (ADS)

Stork, Johannes M. C.; Hosey, George P.

2017-02-01

Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding "Internet of Things" (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies.

Science education in Elementary school by using of "Geopark", Oki Islands, Japan

NASA Astrophysics Data System (ADS)

Oku, S.; Matsumoto, I.

2012-12-01

The Oki islands are located at Japan sea coast side of southwest Japan and belonging to Shimane Prefecture. And there is rich Nature which is consist of mainly alkaline volcanic rocks and metamorphic rocks. Aiming at authorization "Geopark" authorization of Oki Islands, Geologist, Biologist, and residents of Oki Islands are doing investigation and advertisement. Promotion of the science education which utilized the precious Nature, or environmental education is very important in the viewpoint of the science literacy which can protect a Nature and the earth. In this presentation, we mainly propose activity at an elementary school about how to advance the science education by using of this precious Nature. Children learn about the geology which constitutes the ground, and its petro-genesis in the Science of the sixth grade of elementary school. The viewpoint of having been formed by volcano, Earthquake, etc, in long global time is important for the precious and beautiful geology which constitutes the ground. It is at the same time important for a global change to teach also about often doing serious damage to human beings or a living thing with an Earthquake, a volcano, tsunami, etc. That is, we can push (teaching beautiful geology and a precious living thing using "Geopark"), and can learn about the blessing and disaster of a Nature. Moreover, teaching materials and teaching tools like a local textbook or a signboard with which a teacher and a resident can teach them to a child are required.

A Bayesian Analysis of the Post-seismic Deformation of the Great 11 March 2011 Tohoku-Oki (Mw 9.0) Earthquake: Implications for Future Earthquake Occurrence

NASA Astrophysics Data System (ADS)

Ortega Culaciati, F. H.; Simons, M.; Minson, S. E.; Owen, S. E.; Moore, A. W.; Hetland, E. A.

2011-12-01

We aim to quantify the spatial distribution of after-slip following the Great 11 March 2011 Tohoku-Oki (Mw 9.0) earthquake and its implications for the occurrence of a future Great Earthquake, particularly in the Ibaraki region of Japan. We use a Bayesian approach (CATMIP algorithm), constrained by on-land Geonet GPS time series, to infer models of after-slip to date in the Japan megathrust. Unlike traditional inverse methods, in which a single optimum model is found, the Bayesian approach allows a complete characterization of the model parameter space by searching a-posteriori estimates of the range of plausible models. We use the Kullback-Liebler information divergence as a metric of the information gain on each subsurface slip patch, to quantify the extent to which land-based geodetic observations can constrain the upper parts of the megathrust, where the Great Tohoku-Oki earthquake took place. We aim to understand the relationships of spatial distribution of fault slip behavior in the different stages of the seismic cycle. We compare our post-seismic slip distributions to inter- and co-seismic slip distributions obtained through a Bayesian methodology as well as through traditional (optimization) inverse estimates in the published literature. We discuss implications of these analyses for the occurrence of a large earthquake in the Japan megathrust regions adjacent to the Great Tohoku-Oki earthquake.

MEMS for vibration energy harvesting

NASA Astrophysics Data System (ADS)

Li, Lin; Zhang, Yangjian; San, Haisheng; Guo, Yinbiao; Chen, Xuyuan

2008-03-01

In this paper, a capacitive vibration-to-electrical energy harvester was designed. An integrated process flow for fabricating the designed capacitive harvester is presented. For overcoming the disadvantage of depending on external power source in capacitive energy harvester, two parallel electrodes with different work functions are used as the two electrodes of the capacitor to generate a build-in voltage for initially charging the capacitor. The device is a sandwich structure of silicon layer in two glass layers with area of about 1 cm2. The silicon structure is fabricated by using silicon-on-insulator (SOI) wafer. The glass wafers are anodic bonded on to both sides of the SOI wafer to create a vacuum sealed package.

Anomalous phenomena in Schumann resonance band observed in China before the 2011 magnitude 9.0 Tohoku-Oki earthquake in Japan

NASA Astrophysics Data System (ADS)

Zhou, Hongjuan; Zhou, Zhiquan; Qiao, Xiaolin; Yu, Haiyan

2013-12-01

anomalous phenomena in the Schumann resonance (SR) band, possibly associated with the Tohoku-Oki earthquake (EQ), are studied based on the ELF observations at two stations in China. The anomaly appeared on 8 March, 3 days prior to the main shock, and was characterized by an increase in the intensity at frequencies from the first mode to the fourth mode in both magnetic field components, different from the observations in Japan before large EQs in Taiwan. The abnormal behaviors of the north-south and east-west magnetic field components primarily appeared at 0000-0900 UT and 0200-0900 UT on 8 March, respectively. The finite difference time domain numerical method is applied to model the impact of seismic process on the ELF radio propagation. A partially uniform knee model of the vertical conductivity profile suggested by V. C. Mushtak is used to model the day-night asymmetric Earth-ionosphere cavity, and a locally EQ-induced disturbance model of the atmospheric conductivity is introduced. The atmospheric conductivity is assumed to increase around the epicenter according to the localized enhancement of total electron content in the ionosphere. It is concluded that the SR anomalous phenomena before the Tohoku-Oki EQ have much to do with the excited sources located at South America and Asia and also with the localized distribution of the disturbed conductivity. This work is a further confirmation of the relationship of SR anomalies with large EQs and has further concluded that the distortions in the SR band before large EQs may be caused by the irregularities located over the shock epicenter in the Earth-ionosphere cavity by numerical method.

Analysis of Soft Error Rates in 65- and 28-nm FD-SOI Processes Depending on BOX Region Thickness and Body Bias by Monte-Carlo Based Simulations

NASA Astrophysics Data System (ADS)

Zhang, Kuiyuan; Umehara, Shigehiro; Yamaguchi, Junki; Furuta, Jun; Kobayashi, Kazutoshi

2016-08-01

This paper analyzes how body bias and BOX region thickness affect soft error rates in 65-nm SOTB (Silicon on Thin BOX) and 28-nm UTBB (Ultra Thin Body and BOX) FD-SOI processes. Soft errors are induced by alpha-particle and neutron irradiation and the results are then analyzed by Monte Carlo based simulation using PHITS-TCAD. The alpha-particle-induced single event upset (SEU) cross-section and neutron-induced soft error rate (SER) obtained by simulation are consistent with measurement results. We clarify that SERs decreased in response to an increase in the BOX thickness for SOTB while SERs in UTBB are independent of BOX thickness. We also discover SOTB develops a higher tolerance to soft errors when reverse body bias is applied while UTBB become more susceptible.

Monolithic optical phased-array transceiver in a standard SOI CMOS process.

PubMed

Abediasl, Hooman; Hashemi, Hossein

2015-03-09

Monolithic microwave phased arrays are turning mainstream in automotive radars and high-speed wireless communications fulfilling Gordon Moores 1965 prophecy to this effect. Optical phased arrays enable imaging, lidar, display, sensing, and holography. Advancements in fabrication technology has led to monolithic nanophotonic phased arrays, albeit without independent phase and amplitude control ability, integration with electronic circuitry, or including receive and transmit functions. We report the first monolithic optical phased array transceiver with independent control of amplitude and phase for each element using electronic circuitry that is tightly integrated with the nanophotonic components on one substrate using a commercial foundry CMOS SOI process. The 8 × 8 phased array chip includes thermo-optical tunable phase shifters and attenuators, nano-photonic antennas, and dedicated control electronics realized using CMOS transistors. The complex chip includes over 300 distinct optical components and over 74,000 distinct electrical components achieving the highest level of integration for any electronic-photonic system.

Effects of spin-orbit coupling and many-body correlations in STM transport through copper phthalocyanine.

PubMed

Siegert, Benjamin; Donarini, Andrea; Grifoni, Milena

2015-01-01

The interplay of exchange correlations and spin-orbit interaction (SOI) on the many-body spectrum of a copper phtalocyanine (CuPc) molecule and their signatures in transport are investigated. We first derive a minimal model Hamiltonian in a basis of frontier orbitals that is able to reproduce experimentally observed singlet-triplet splittings. In a second step SOI effects are included perturbatively. Major consequences of the SOI are the splitting of former degenerate levels and a magnetic anisotropy, which can be captured by an effective low-energy spin Hamiltonian. We show that scanning tunneling microscopy-based magnetoconductance measurements can yield clear signatures of both these SOI-induced effects.

Development of the Stress of Immigration Survey (SOIS): a Field Test among Mexican Immigrant Women

PubMed Central

Sternberg, Rosa Maria; Nápoles, Anna Maria; Gregorich, Steven; Paul, Steven; Lee, Kathryn A.; Stewart, Anita L.

2016-01-01

The Stress of Immigration Survey (SOIS) is a screening tool used to assess immigration-related stress. The mixed methods approach included concept development, pretesting, field-testing, and psychometric evaluation in a sample of 131 low-income women of Mexican descent. The 21-item SOIS screens for stress related to language; immigrant status; work issues; yearning for family and home country; and cultural dissonance. Mean scores ranged from 3.6 to 4.4 (1-5 scale, higher is more stress). Cronbach's alphas >.80 for all sub-scales. The SOIS may be a useful screening tool for detecting high levels of immigration-related stress in low-income Mexican immigrant women. PMID:26605954

Seismic structure of southern margin of the 2011 Tohoku-Oki Earthquake aftershocks area: slab-slab contact zone beneath northeastern Kanto, central Japan

NASA Astrophysics Data System (ADS)

Kurashimo, E.; Sato, H.; Abe, S.; Mizohata, S.; Hirata, N.

2011-12-01

The 2011 Tohoku-Oki Earthquake (Mw9.0) occurred on the Japan Trench off the eastern shore of northern Honshu, Japan. The southward expansion of the afterslip area has reached the Kanto region, central Japan (Ozawa et al., 2011). The Philippine Sea Plate (PHS) subducts beneath the Kanto region. The bottom of the PHS is in contact with the upper surface of the Pacific Plate (PAC) beneath northeastern Kanto. Detailed structure of the PHS-PAC contact zone is important to constrain the southward rupture process of the Tohoku-Oki Earthquake and provide new insight into the process of future earthquake occurrence beneath the Kanto region. Active and passive seismic experiments were conducted to obtain a structural image beneath northeastern Kanto in 2010 (Sato et al., 2010). The geometry of upper surface of the PHS has been revealed by seismic reflection profiling (Sato et al., 2010). Passive seismic data set is useful to obtain a deep structural image. Two passive seismic array observations were conducted to obtain a detailed structure image of the PHS-PAC contact zone beneath northeastern Kanto. One was carried out along a 50-km-long seismic line trending NE-SW (KT-line) and the other was carried out along a 65-km-long seismic line trending NW-SE (TM-line). Sixty-five 3-component portable seismographs were deployed on KT-line with 500 to 700 m interval and waveforms were continuously recorded during a four-month period from June, 2010. Forty-five 3-component portable seismographs were deployed on TM-line with about 1-2 km spacing and waveforms were continuously recorded during the seven-month period from June, 2010. Arrival times of earthquakes were used in a joint inversion for earthquake locations and velocity structure, using the iterative damped least-squares algorithm, simul2000 (Thurber and Eberhart-Phillips, 1999). The relocated hypocenter distribution shows that the seismicity along the upper surface of the PAC is located at depths of 45-75 km beneath northeastern Kanto. The seismicity associated with the northwestward subducting PHS can be traced to a depth of 60 km. The depth section of Vp/Vs structure shows the lateral variation of the Vp/Vs values along the top of the PHS. Clustered earthquakes are located in and around the high Vp/Vs zone. High Vp/Vs ratio and low Vp zone with low seismicity is observed in the slab-slab contact zone beneath northeastern Kanto. The heterogeneity of the slab-slab contact zone beneath northeastern Kanto may affect the southward expansion of the afterslip of the Tohoku-Oki Earthquake. Acknowledgments: This study was supported by the Earthquake Research Institute cooperative research program.

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

PubMed

Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

2016-03-09

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

Experimental verification of layout physical verification of silicon photonics

NASA Astrophysics Data System (ADS)

El Shamy, Raghi S.; Swillam, Mohamed A.

2018-02-01

Silicon photonics have been approved as one of the best platforms for dense integration of photonic integrated circuits (PICs) due to the high refractive index contrast among its materials. Silicon on insulator (SOI) is a widespread photonics technology, which support a variety of devices for lots of applications. As the photonics market is growing, the number of components in the PICs increases which increase the need for an automated physical verification (PV) process. This PV process will assure reliable fabrication of the PICs as it will check both the manufacturability and the reliability of the circuit. However, PV process is challenging in the case of PICs as it requires running an exhaustive electromagnetic (EM) simulations. Our group have recently proposed an empirical closed form models for the directional coupler and the waveguide bends based on the SOI technology. The models have shown a very good agreement with both finite element method (FEM) and finite difference time domain (FDTD) solvers. These models save the huge time of the 3D EM simulations and can be easily included in any electronic design automation (EDA) flow as the equations parameters can be easily extracted from the layout. In this paper we present experimental verification for our previously proposed models. SOI directional couplers with different dimensions have been fabricated using electron beam lithography and measured. The results from the measurements of the fabricate devices have been compared to the derived models and show a very good agreement. Also the matching can reach 100% by calibrating certain parameter in the model.

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

NASA Astrophysics Data System (ADS)

Bonno, Olivier; Barraud, Sylvain; Mariolle, Denis; Andrieu, François

2008-03-01

Recently, in order to explain the long-channel electron effective mobility at a high sheet carrier density in strained silicon channel transistors, it has been suggested by [M. V. Fischetti, F. Gamiz, and W. Hansch, J. Appl. Phys. 92, 7230 (2002)] that biaxial tensile strain should smooth the Si/SiO2 interface. To address this topic, the roughness properties of biaxial strained silicon-on-insulator (s-SOI) films are investigated by means of atomic force microscopy. Through in-depth statistical analysis of the digitalized surface profiles, the roughness parameters are extracted for unstrained and strained SOI films, with 0.8% biaxial tensile strain. Especially, it is found that strain significantly reduces the roughness amplitude. Then, mobility calculations in SOI and s-SOI inversion layers are performed in the framework of the Kubo-Greenwood formalism. The model accounts for the main scattering mechanisms that are dominant in the high electron density range, namely phonon and surface roughness. Special attention has been paid to the modeling of the latter by accounting for all the contributions of the potential which arise from the deformed rough interface, and by using a multisubband wavelength-dependent screening model. This model is then applied to study the influence of the surface morphology on the mobility in s-SOI inversion layers. In this context, the mobility gain between s-SOI and unstrained SOI layers is found to agree significantly better with experimental data if the strain-induced decrease of the roughness amplitude is taken into account.

Fabrication and characterization of resonant SOI micromechanical silicon sensors based on DRIE micromachining, freestanding release process and silicon direct bonding

NASA Astrophysics Data System (ADS)

Gigan, Olivier; Chen, Hua; Robert, Olivier; Renard, Stephane; Marty, Frederic

2002-11-01

This paper is dedicated to the fabrication and technological aspect of a silicon microresonator sensor. The entire project includes the fabrication processes, the system modelling/simulation, and the electronic interface. The mechanical model of such resonator is presented including description of frequency stability and Hysterises behaviour of the electrostatically driven resonator. Numeric model and FEM simulations are used to simulate the system dynamic behaviour. The complete fabrication process is based on standard microelectronics technology with specific MEMS technological steps. The key steps are described: micromachining on SOI by Deep Reactive Ion Etching (DRIE), specific release processes to prevent sticking (resist and HF-vapour release process) and collective vacuum encapsulation by Silicon Direct Bonding (SDB). The complete process has been validated and prototypes have been fabricated. The ASIC was designed to interface the sensor and to control the vibration amplitude. This electronic was simulated and designed to work up to 200°C and implemented in a standard 0.6μ CMOS technology. Characterizations of sensor prototypes are done both mechanically and electrostatically. These measurements showed good agreements with theory and FEM simulations.

A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy

NASA Astrophysics Data System (ADS)

Nagase, Koichi; Wada, Takehiko; Ikeda, Hirokazu; Arai, Yasuo; Ohno, Morifumi; Hanaoka, Misaki; Kanada, Hidehiro; Oyabu, Shinki; Hattori, Yasuki; Ukai, Sota; Suzuki, Toyoaki; Watanabe, Kentaroh; Baba, Shunsuke; Kochi, Chihiro; Yamamoto, Keita

2016-07-01

We are developing a fully depleted silicon-on-insulator (FD-SOI) CMOS readout integrated circuit (ROIC) operated at temperatures below ˜ 4 K. Its application is planned for the readout circuit of high-impedance far-infrared detectors for astronomical observations. We designed a trans-impedance amplifier (TIA) using a CMOS operational amplifier (OPAMP) with FD-SOI technique. The TIA is optimized to readout signals from a germanium blocked impurity band (Ge BIB) detector which is highly sensitive to wavelengths of up to ˜ 200 \\upmu m. For the first time, we demonstrated the FD-SOI CMOS OPAMP combined with the Ge BIB detector at 4.5 K. The result promises to solve issues faced by conventional cryogenic ROICs.

A grating coupler with a trapezoidal hole array for perfectly vertical light coupling between optical fibers and waveguides

NASA Astrophysics Data System (ADS)

Mizutani, Akio; Eto, Yohei; Kikuta, Hisao

2017-12-01

A grating coupler with a trapezoidal hole array was designed and fabricated for perfectly vertical light coupling between a single-mode optical fiber and a silicon waveguide on a silicon-on-insulator (SOI) substrate. The grating coupler with an efficiency of 53% was computationally designed at a 1.1-µm-thick buried oxide (BOX) layer. The grating coupler and silicon waveguide were fabricated on the SOI substrate with a 3.0-µm-thick BOX layer by a single full-etch process. The measured coupling efficiency was 24% for TE-polarized light at 1528 nm wavelength, which was 0.69 times of the calculated coupling efficiency for the 3.0-µm-thick BOX layer.

Surface ozone and carbon monoxide levels observed at Oki, Japan: regional air pollution trends in East Asia.

PubMed

Sikder, Helena Akhter; Suthawaree, Jeeranut; Kato, Shungo; Kajii, Yoshizumi

2011-03-01

Simultaneous ground-based measurements of ozone and carbon monoxide were performed at Oki, Japan, from January 2001 to September 2002 in order to investigate the O(3) and CO characteristics and their distributions. The observations revealed that O(3) and CO concentrations were maximum in springtime and minimum in the summer. The monthly averaged concentrations of O(3) and CO were 60 and 234 ppb in spring and 23 and 106 ppb in summer, respectively. Based on direction, 5-day isentropic backward trajectory analysis was carried out to determine the transport path of air masses, preceding their arrival at Oki. Comparison between classified results from present work and results from the year 1994-1996 was carried out. The O(3) and CO concentration results of classified air masses in our analysis show similar concentration trends to previous findings; highest in the WNW/W, lowest in N/NE and medium levels in NW. Moreover, O(3) levels are higher and CO levels are lower in the present study in all categories. Copyright © 2010 Elsevier Ltd. All rights reserved.

ANALYSIS OF LABOUR ACCIDENTS OCCURRING IN DISASTER RESTORATION WORK FOLLOWING THE NIIGATA CHUETSU EARTHQUAKE (2004) AND THE NIIGATA CHUETSU-OKI EARTHQUAKE (2007)

NASA Astrophysics Data System (ADS)

Itoh, Kazuya; Noda, Masashi; Kikkawa, Naotaka; Hori, Tomohito; Tamate, Satoshi; Toyosawa, Yasuo; Suemasa, Naoaki

Labour accidents in disaster-relief and disaster restoration work following the Niigata Chuetsu Earthquake (2004) and the Niigata Chuetsu-oki Earthquake (2007) were analysed and characterised in order to raise awareness of the risks and hazards in such work. The Niigata Chuetsu-oki Earthquake affected houses and buildings rather than roads and railways, which are generally disrupted due to landslides or slope failures caused by earthquakes. In this scenario, the predominant type of accident is a "fall to lower level," which increases mainly due to the fact that labourers are working to repair houses and buildings. On the other hand, landslides and slope failures were much more prevalent in the Niigata Chuetsu Earthquake, resulting in more accidents occurring in geotechnical works rather than in construction works. Therefore, care should be taken in preventing "fall to lower level" accidents associated with repair work on the roofs of low-rise houses, "cut or abrasion" accidents due to the demolition of damaged houses and "caught in or compressed by equipment" accidents in road works and water and sewage works.

Modeling of the 2011 Tohoku-oki Tsunami and its Impacts on Hawaii

NASA Astrophysics Data System (ADS)

Cheung, K.; Yamazaki, Y.; Roeber, V.; Lay, T.

2011-12-01

The 2011 Tohoku-oki great earthquake (Mw 9.0) generated a destructive tsunami along the entire Pacific coast of northeastern Japan. The tsunami, which registered 6.7 m amplitude at a coastal GPS gauge and 1.75 m at an open-ocean DART buoy, triggered warnings across the Pacific. The waves reached Hawaii 7 hours after the earthquake and caused localized damage and persistent coastal oscillations along the island chain. Several tide gauges and a DART buoy west of Hawaii Island recorded clear signals of the tsunami. The Tsunami Observer Program of Hawaii State Civil Defense immediately conducted field surveys to gather runup and inundation data on Kauai, Oahu, Maui, and Hawaii Island. The extensive global seismic networks and geodetic instruments allows evaluation and validation of finite fault solutions for the tsunami modeling. We reconstruct the 2011 Tohoku-oki tsunami using the long-wave model NEOWAVE (Non-hydrostatic Evolution of Ocean WAVEs) and a finite fault solution based on inversion of teleseismic P waves. The depth-integrated model describes dispersive waves through the non-hydrostatic pressure and vertical velocity, which also account for tsunami generation from time histories of seafloor deformation. The semi-implicit, staggered finite difference model captures flow discontinuities associated with bores or hydraulic jumps through the momentum-conserved advection scheme. Four levels of two-way nested grids in spherical coordinates allow description of tsunami evolution processes of different time and spatial scales for investigation of the impacts around the Hawaiian Islands. The model results are validated with DART data across the Pacific as well as tide gauge and runup measurements in Hawaii. Spectral analysis of the computed surface elevation reveals a series of resonance modes over the insular shelf and slope complex along the archipelago. Resonance oscillations provide an explanation for the localized impacts and the persistent wave activities in the aftermath. The model results provide insights into effects of fringing reefs, which are present along 70% of Hawaii's coastlines, on tsunami transformation and runup processes. This case study improves our understanding of tsunamis in tropical island environment and validates the modeling capability to predict their impacts for hazard mitigation and emergency management.

Southern Ocean Climate and Sea Ice Anomalies Associated with the Southern Oscillation

NASA Technical Reports Server (NTRS)

Kwok, R.; Comiso, J. C.

2001-01-01

The anomalies in the climate and sea ice cover of the Southern Ocean and their relationships with the Southern Oscillation (SO) are investigated using a 17-year of data set from 1982 through 1998. We correlate the polar climate anomalies with the Southern Oscillation index (SOI) and examine the composites of these anomalies under the positive (SOI > 0), neutral (0 > SOI > -1), and negative (SOI < -1) phases of SOL The climate data set consists of sea-level pressure, wind, surface air temperature, and sea surface temperature fields, while the sea ice data set describes its extent, concentration, motion, and surface temperature. The analysis depicts, for the first time, the spatial variability in the relationship of the above variables and the SOL The strongest correlation between the SOI and the polar climate anomalies are found in the Bellingshausen, Amundsen and Ross sea sectors. The composite fields reveal anomalies that are organized in distinct large-scale spatial patterns with opposing polarities at the two extremes of SOI, and suggest oscillating climate anomalies that are closely linked to the SO. Within these sectors, positive (negative) phases of the SOI are generally associated with lower (higher) sea-level pressure, cooler (warmer) surface air temperature, and cooler (warmer) sea surface temperature in these sectors. Associations between these climate anomalies and the behavior of the Antarctic sea ice cover are clearly evident. Recent anomalies in the sea ice cover that are apparently associated with the SOI include: the record decrease in the sea ice extent in the Bellingshausen Sea from mid- 1988 through early 199 1; the relationship between Ross Sea SST and ENSO signal, and reduced sea ice concentration in the Ross Sea; and, the shortening of the ice season in the eastern Ross Sea, Amundsen Sea, far western Weddell Sea, and the lengthening of the ice season in the western Ross Sea, Bellingshausen Sea and central Weddell Sea gyre over the period 1988-1994. Four ENSO episodes over the last 17 years contributed to a negative mean in the SOI (-0.5). In each of these episodes, significant retreats in the Bellingshausen/Amundsen Sea were observed providing direct confirmation of the impact of SO on the Antarctic sea ice cover.

Acute care surgery: defining mortality in emergency general surgery in the state of Maryland.

PubMed

Narayan, Mayur; Tesoriero, Ronald; Bruns, Brandon R; Klyushnenkova, Elena N; Chen, Hegang; Diaz, Jose J

2015-04-01

Emergency general surgery (EGS) is a major component of acute care surgery, however, limited data exist on mortality with respect to trauma center (TC) designation. We hypothesized that mortality would be lower for EGS patients treated at a TC vs non-TC (NTC). A retrospective review of the Maryland Health Services Cost Review Commission database from 2009 to 2013 was performed. The American Association for the Surgery of Trauma EGS ICD-9 codes were used to identify EGS patients. Data collected included demographics, TC designation, emergency department admissions, and All Patients Refined Severity of Illness (APR_SOI). Trauma center designation was used as a marker of a formal acute care surgery program. Primary outcomes included in-hospital mortality. Multivariable logistic regression analysis was performed controlling for age. There were 817,942 EGS encounters. Mean ± SD age of patients was 60.1 ± 18.7 years, 46.5% were males; 71.1% of encounters were at NTCs; and 75.8% were emergency department admissions. Overall mortality was 4.05%. Mortality was calculated based on TC designation controlling for age across APR_SOI strata. Multivariable logistic regression analysis did not show statistically significant differences in mortality between hospital levels for minor APR_SOI. For moderate APR_SOI, mortality was significantly lower for TCs compared with NTCs (p < 0.001). Among TCs, the effect was strongest for Level I TC (odds ratio = 0.34). For extreme APR_SOI, mortality was higher at TCs vs NTCs (p < 0.001). Emergency general surgery patients treated at TCs had lower mortality for moderate APR_SOI, but increased mortality for extreme APR_SOI when compared with NTCs. Additional investigation is required to better evaluate this unexpected finding. Copyright © 2015 American College of Surgeons. Published by Elsevier Inc. All rights reserved.

Spontaneous magnetic order in complex materials: Role of longitudinal spin-orbit interactions

NASA Astrophysics Data System (ADS)

Chakraborty, Subrata; Vijay, Amrendra

2017-06-01

We show that the longitudinal spin-orbit interactions (SOI) critically determine the fate of spontaneous magnetic order (SMO) in complex materials. To study the magnetic response of interacting electrons constituting the material, we implement an extension of the Hubbard model that faithfully accounts for the SOI. Next, we use the double-time Green functions of quantum statistical mechanics to obtain the spontaneous magnetization, Msp , and thence ascertain the possibility of SMO. For materials with quenched SOI, in an arbitrary dimension, Msp vanishes at finite temperatures, implying the presence of the disordered (paramagnetic) phase. This is consistent with and goes beyond the Bogolyubov's inequality based analysis in one and two dimensions. In the presence of longitudinal SOI, Msp , for materials in an arbitrary dimension, remains non-zero at finite temperatures, which indicates the existence of the ordered (ferromagnetic) phase. As a plausible experimental evidence of the present SOI-based phenomenology, we discuss, inter alia, a recent experimental study on Y4Mn1-xGa12-yGey, an intermetallic compound, which exhibits a magnetic phase transition (paramagnetic to ferromagnetic) upon tuning the fraction of Ge atoms and thence the vacancies of the magnetic centers in this system. The availability of Ge atoms to form a direct chemical bond with octahedral Mn in this material appears to quench the SOI and, as a consequence, favours the formation of the disordered (paramagnetic) phase.

Spin transport and accumulation in n{sup +}-Si using Heusler compound Co{sub 2}FeSi/MgO tunnel contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishikawa, Mizue, E-mail: mizue.ishikawa@toshiba.co.jp; Sugiyama, Hideyuki; Inokuchi, Tomoaki

2015-08-31

We investigate spin transport and accumulation in n{sup +}-Si using Heusler compound Co{sub 2}FeSi/MgO/Si on insulator (SOI) devices. The magnitudes of the non-local four- and three-terminal Hanle effect signals when using Heusler compound Co{sub 2}FeSi/MgO/SOI devices are larger than when using CoFe/MgO/SOI devices, whereas the preparation methods of MgO layers on SOI are exactly same in both devices. Different bias voltage dependencies on the magnitude of spin accumulation signals are also observed between these devices. Especially, Co{sub 2}FeSi/MgO/SOI devices show large spin accumulation signals compared with CoFe/MgO/SOI devices in the low bias voltage region less than ∼1000 mV in which themore » increase of the spin polarization is expected from the estimation of the density of states in Heusler compound Co{sub 2}FeSi and CoFe under spin extraction conditions. These results indicate that the species of ferromagnetic material definitely affects the magnitude and behavior of the spin signals. The use of highly polarized ferromagnets such as Heusler compounds would be important for improving the spin polarization and the magnitude of spin signals through Si channels.« less

Intra-day response of foreign exchange markets after the Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Nakano, Shuhei; Hirata, Yoshito; Iwayama, Koji; Aihara, Kazuyuki

2015-02-01

Although an economy is influenced by a natural disaster, the market response to the disaster during the first 24 hours is not clearly understood. Here we show that an earthquake quickly causes temporal changes in a foreign exchange market by examining the case of the Tohoku-Oki earthquake. Recurrence plots and statistical change point detection independently show that the United States dollar-Japanese yen market responded to the earthquake activity without delay and with the delay of about 2 minutes, respectively. These findings support that the efficient market hypothesis nearly holds now in the time scale of minutes.

Classical emergence of intrinsic spin-orbit interaction of light at the nanoscale

NASA Astrophysics Data System (ADS)

Vázquez-Lozano, J. Enrique; Martínez, Alejandro

2018-03-01

Traditionally, in macroscopic geometrical optics intrinsic polarization and spatial degrees of freedom of light can be treated independently. However, at the subwavelength scale these properties appear to be coupled together, giving rise to the spin-orbit interaction (SOI) of light. In this work we address theoretically the classical emergence of the optical SOI at the nanoscale. By means of a full-vector analysis involving spherical vector waves we show that the spin-orbit factorizability condition, accounting for the mutual influence between the amplitude (spin) and phase (orbit), is fulfilled only in the far-field limit. On the other side, in the near-field region, an additional relative phase introduces an extra term that hinders the factorization and reveals an intricate dynamical behavior according to the SOI regime. As a result, we find a suitable theoretical framework able to capture analytically the main features of intrinsic SOI of light. Besides allowing for a better understanding into the mechanism leading to its classical emergence at the nanoscale, our approach may be useful to design experimental setups that enhance the response of SOI-based effects.

El Niño Southern Oscillation (ENSO) and dysentery in Shandong province, China.

PubMed

Zhang, Ying; Bi, Peng; Wang, Guoyong; Hiller, Janet E

2007-01-01

To investigate the impact of the El Niño Southern Oscillation (ENSO) on dysentery transmission, the relationship between monthly dysentery cases in Shandong Province of China and the monthly Southern Oscillation Index (SOI), a broad index of ENSO, was examined over the period 1991-2003. Spearman correlations and generalized linear models were calculated to detect the association between the SOI and dysentery cases. Data from 1991 to 2001 were used to estimate the parameters, while data from 2002 to 2003 were used to test the forecasting ability of the model. After controlling for seasonality, autocorrelation, and a time-lagged effect, the results indicate that there was a significant negative association between the number of dysentery cases and the SOI, with a lagged effect of 2 months. A one-standard-deviation decrease in the SOI might cause up to 207 more dysentery cases per month in Shandong Province. This is the first report of the impact of the Southern Oscillation on dysentery risk in China, indicating that the SOI may be a useful early indicator of potential dysentery risk in Shandong Province.

Characterization of wafer-level bonded hermetic packages using optical leak detection

NASA Astrophysics Data System (ADS)

Duan, Ani; Wang, Kaiying; Aasmundtveit, Knut; Hoivik, Nils

2009-07-01

For MEMS devices required to be operated in a hermetic environment, one of the main reliability issues is related to the packaging methods applied. In this paper, an optical method for testing low volume hermetic cavities formed by anodic bonding between glass and SOI (silicon on insulator) wafer is presented. Several different cavity-geometry structures have been designed, fabricated and applied to monitor the hermeticity of wafer level anodic bonding. SOI wafer was used as the cap wafer on which the different-geometry structures were fabricated using standard MEMS technology. The test cavities were bonded using SOI wafers to glass wafers at 400C and 1000mbar pressure inside a vacuum bonding chamber. The bonding voltage varies from 200V to 600V. The bonding strength between glass and SOI wafer was mechanically tested using shear tester. The deformation amplitudes of the cavity cap surface were monitored by using an optical interferometer. The hermeticity of the glass-to-SOI wafer level bonding was characterized through observing the surface deformation in a 6 months period in atmospheric environment. We have observed a relatively stable micro vacuum-cavity.

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Structural makeup, biopolymer conformation, and biodegradation characteristics of a newly developed super genotype of oats (CDC SO-I versus conventional varieties): a novel approach.

PubMed

Damiran, Daalkhaijav; Yu, Peiqiang

2010-02-24

Recently, a new "super" genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it was observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE(L3x), 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.

Structural Make-up, Biopolymer Conformation, and Biodegradation Characteristics of Newly Developed Super Genotype of Oats (CDC SO-I vs. Conventional Varieties): Novel Approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damiran, D.; Yu, P

Recently, a new 'super' genotype of oats (CDC SO-I or SO-I) has been developed. The objectives of this study were to determine structural makeup (features) of oat grain in endosperm and pericarp regions and to reveal and identify differences in protein amide I and II and carbohydrate structural makeup (conformation) between SO-I and two conventional oats (CDC Dancer and Derby) grown in western Canada in 2006, using advanced synchrotron radiation based Fourier transform infrared microspectroscopy (SRFTIRM). The SRFTIRM experiments were conducted at National Synchrotron Light Sources, Brookhaven National Laboratory (NSLS, BNL, U.S. Department of Energy). From the results, it wasmore » observed that comparison between the new genotype oats and conventional oats showed (1) differences in basic chemical and protein subfraction profiles and energy values with the new SO-I oats containing lower lignin (21 g/kg of DM) and higher soluble crude protein (530 g/kg CP), crude fat (59 g/kg of DM), and energy values (TDN, 820 g/kg of DM; NE{sub L3x}, 7.8 MJ/kg of DM); (2) significant differences in rumen biodegradation kinetics of dry matter, starch, and protein with the new SO-I oats containing lower EDDM (638 g/kg of DM) and higher EDCP (103 g/kg of DM); (3) significant differences in nutrient supply with highest truly absorbed rumen undegraded protein (ARUP, 23 g/kg of DM) and total metabolizable protein supply (MP, 81 g/kg of DM) from the new SO-I oats; and (4) significant differences in structural makeup in terms of protein amide I in the endosperm region (with amide I peak height from 0.13 to 0.22 IR absorbance unit) and cellulosic compounds to carbohydrate ratio in the pericarp region (ratio from 0.02 to 0.06). The results suggest that with the SRFTIRM technique, the structural makeup differences between the new genotype oats (SO-I) and two conventional oats (Dancer and Derby) could be revealed.« less

Source inversion analysis of the 2011 Tohoku-Oki earthquake using Green's functions calculated from a 3-D heterogeneous structure model

NASA Astrophysics Data System (ADS)

Suzuki, W.; Aoi, S.; Maeda, T.; Sekiguchi, H.; Kunugi, T.

2013-12-01

Source inversion analysis using near-source strong-motion records with an assumption of 1-D underground structure models has revealed the overall characteristics of the rupture process of the 2011 Tohoku-Oki mega-thrust earthquake. This assumption for the structure model is acceptable because the seismic waves radiated during the Tohoku-Oki event were rich in the very-low-frequency contents lower than 0.05 Hz, which are less affected by the small-scale heterogeneous structure. The analysis using more reliable Green's functions even in the higher-frequency range considering complex structure of the subduction zone will illuminate more detailed rupture process in space and time and the transition of the frequency dependence of the wave radiation for the Tohoku-Oki earthquake. In this study, we calculate the near-source Green's functions using a 3-D underground structure model and perform the source inversion analysis using them. The 3-D underground structure model used in this study is the Japan Integrated Velocity Structure Model (Headquarters for Earthquake Research Promotion, 2012). A curved fault model on the Pacific plate interface is discretized into 287 subfaults at ~20 km interval. The Green's functions are calculated using GMS (Aoi et al., 2004), which is a simulation program package for the seismic wave field by the finite difference method using discontinuous grids (Aoi and Fujiwara, 1999). Computational region is 136-146.2E in longitude, 34-41.6N in latitude, and 0-100 km in depth. The horizontal and vertical grid intervals are 200 m and 100 m, respectively, for the shallower region and those for the deeper region are tripled. The number of the total grids is 2.1 billion. We derive 300-s records by calculating 36,000 steps with a time interval of 0.0083 second (120 Hz sampling). It takes nearly one hour to compute one case using 48 Graphics Processing Units (GPU) on TSUBAME2.0 supercomputer owned by Tokyo Institute of Technology. In total, 574 cases are calculated to derive the Green's functions for two basis slip angles from each subfault. A preliminary inversion result using the same frequency band and strong-motion stations as those for our previous studies (Suzuki et al., 2011; 2013) shows that, in addition to a large slip in the shallower area, a slip in the deeper part is relatively larger than the previous result, for the off Miyagi region. Characteristics of the temporal rupture progression are consistent with the previous studies. Our further study will consider the rupture propagation inside subfault, which would more appropriately evaluate the slip amount of the deeper area related to the rupture propagating landward. Improvement of waveform alignment is also necessary to reduce the influence of the discrepancy and uncertainty of the underground structure models used for the hypocenter determination and Green's function calculation. Acknowledgements: This research is partially supported by "Joint Usage/Research Center for Interdisciplinary Large-scale Information Infrastructures" and "High Performance Computing Infrastructure" in Japan.

Mitigating artifacts in back-projection source imaging with implications for frequency-dependent properties of the Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Meng, Lingsen; Ampuero, Jean-Paul; Luo, Yingdi; Wu, Wenbo; Ni, Sidao

2012-12-01

Comparing teleseismic array back-projection source images of the 2011 Tohoku-Oki earthquake with results from static and kinematic finite source inversions has revealed little overlap between the regions of high- and low-frequency slip. Motivated by this interesting observation, back-projection studies extended to intermediate frequencies, down to about 0.1 Hz, have suggested that a progressive transition of rupture properties as a function of frequency is observable. Here, by adapting the concept of array response function to non-stationary signals, we demonstrate that the "swimming artifact", a systematic drift resulting from signal non-stationarity, induces significant bias on beamforming back-projection at low frequencies. We introduce a "reference window strategy" into the multitaper-MUSIC back-projection technique and significantly mitigate the "swimming artifact" at high frequencies (1 s to 4 s). At lower frequencies, this modification yields notable, but significantly smaller, artifacts than time-domain stacking. We perform extensive synthetic tests that include a 3D regional velocity model for Japan. We analyze the recordings of the Tohoku-Oki earthquake at the USArray and at the European array at periods from 1 s to 16 s. The migration of the source location as a function of period, regardless of the back-projection methods, has characteristics that are consistent with the expected effect of the "swimming artifact". In particular, the apparent up-dip migration as a function of frequency obtained with the USArray can be explained by the "swimming artifact". This indicates that the most substantial frequency-dependence of the Tohoku-Oki earthquake source occurs at periods longer than 16 s. Thus, low-frequency back-projection needs to be further tested and validated in order to contribute to the characterization of frequency-dependent rupture properties.

Stable creeping fault segments can become destructive as a result of dynamic weakening.

PubMed

Noda, Hiroyuki; Lapusta, Nadia

2013-01-24

Faults in Earth's crust accommodate slow relative motion between tectonic plates through either similarly slow slip or fast, seismic-wave-producing rupture events perceived as earthquakes. These types of behaviour are often assumed to be separated in space and to occur on two different types of fault segment: one with stable, rate-strengthening friction and the other with rate-weakening friction that leads to stick-slip. The 2011 Tohoku-Oki earthquake with moment magnitude M(w) = 9.0 challenged such assumptions by accumulating its largest seismic slip in the area that had been assumed to be creeping. Here we propose a model in which stable, rate-strengthening behaviour at low slip rates is combined with coseismic weakening due to rapid shear heating of pore fluids, allowing unstable slip to occur in segments that can creep between events. The model parameters are based on laboratory measurements on samples from the fault of the M(w) 7.6 1999 Chi-Chi earthquake. The long-term slip behaviour of the model, which we examine using a unique numerical approach that includes all wave effects, reproduces and explains a number of both long-term and coseismic observations-some of them seemingly contradictory-about the faults at which the Tohoku-Oki and Chi-Chi earthquakes occurred, including there being more high-frequency radiation from areas of lower slip, the largest seismic slip in the Tohoku-Oki earthquake having occurred in a potentially creeping segment, the overall pattern of previous events in the area and the complexity of the Tohoku-Oki rupture. The implication that earthquake rupture may break through large portions of creeping segments, which are at present considered to be barriers, requires a re-evaluation of seismic hazard in many areas.

Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters

NASA Astrophysics Data System (ADS)

Wu, Aimin; Wang, Xi; Wei, Xing; Chen, Jing; Chen, Ming; Zhang, Zhengxuan

2009-05-01

Si ion-implantation and post annealing of silicon wafers prior to wafer bonding were used to radiation-harden the thermal oxide layer of Silicon on Insulator structures. After grinding and polishing, Total-Dose-Radiation-Hardened SOI (TDRH-SOI) wafers with several-micron-thick device layers were prepared. Electrical characterization before and after X-ray irradiation showed that the flatband voltage shift induced by irradiation was reduced by this preprocessing. Photoluminescence Spectroscopy (PL), Transmission Electron Microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results indicated that the improvement of the total dose response of the TDRH-SOI wafer was associated with formation of Si nanoclusters in the implanted oxide layer, suggesting that these were the likely candidates for electron and proton trapping centers that reduce the positive charge buildup effect in the buried oxide.

Spacecraft Onboard Interface Services: Current Status and Roadmap

NASA Astrophysics Data System (ADS)

Prochazka, Marek; Lopez Trescastro, Jorge; Krueger, Sabine

2016-08-01

Spacecraft Onboard Interface Services (SOIS) is a set of CCSDS standards defining communication stack services to interact with hardware equipment onboard spacecraft. In 2014 ESA kicked off three parallel activities to critically review the SOIS standards, use legacy spacecraft flight software (FSW), make it compliant to a preselected subset of SOIS standards and make performance and architecture assessment. As a part of the three parallel activities, led by Airbus DS Toulouse, OHB Bremen and Thales Alenia Space Cannes respectively, it was to provide feedback back to ESA and CCSDS and also to propose a roadmap of transition towards an operational FSW system fully compliant to applicable SOIS standards. The objective of the paper is twofold: Firstly it is to summarise main results of the three parallel activities and secondly, based on the results, to propose a roadmap for the future.

A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET

NASA Astrophysics Data System (ADS)

Priya, Anjali; Mishra, Ram Awadh

2016-04-01

In this paper, analytical modeling of surface potential is proposed for new Triple Metal Gate (TMG) fully depleted Recessed-Source/Dain Silicon On Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The metal with the highest work function is arranged near the source region and the lowest one near the drain. Since Recessed-Source/Drain SOI MOSFET has higher drain current as compared to conventional SOI MOSFET due to large source and drain region. The surface potential model developed by 2D Poisson's equation is verified by comparison to the simulation result of 2-dimensional ATLAS simulator. The model is compared with DMG and SMG devices and analysed for different device parameters. The ratio of metal gate length is varied to optimize the result.

An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

NASA Astrophysics Data System (ADS)

Ye, Fan; Xiaorong, Luo; Kun, Zhou; Yuanhang, Fan; Yongheng, Jiang; Qi, Wang; Pei, Wang; Yinchun, Luo; Bo, Zhang

2014-03-01

A low specific on-resistance (Ron,sp) SOI NBL TLDMOS (silicon-on-insulator trench LDMOS with an N buried layer) is proposed. It has three features: a thin N buried layer (NBL) on the interface of the SOI layer/buried oxide (BOX) layer, an oxide trench in the drift region, and a trench gate extended to the BOX layer. First, on the on-state, the electron accumulation layer forms beside the extended trench gate; the accumulation layer and the highly doping NBL constitute an L-shaped low-resistance conduction path, which sharply decreases the Ron,sp. Second, in the y-direction, the BOX's electric field (E-field) strength is increased to 154 V/μm from 48 V/μm of the SOI Trench Gate LDMOS (SOI TG LDMOS) owing to the high doping NBL. Third, the oxide trench increases the lateral E-field strength due to the lower permittivity of oxide than that of Si and strengthens the multiple-directional depletion effect. Fourth, the oxide trench folds the drift region along the y-direction and thus reduces the cell pitch. Therefore, the SOI NBL TLDMOS structure not only increases the breakdown voltage (BV), but also reduces the cell pitch and Ron,sp. Compared with the TG LDMOS, the NBL TLDMOS improves the BV by 105% at the same cell pitch of 6 μm, and decreases the Ron,sp by 80% at the same BV.

Channel add-drop filter based on dual photonic crystal cavities in push-pull mode.

PubMed

Poulton, Christopher V; Zeng, Xiaoge; Wade, Mark T; Popović, Miloš A

2015-09-15

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling wave resonator, and, thus, provides separation of the through and drop port transmission from the input port. The device is on a 3×3  mm chip fabricated in an advanced microelectronics silicon-on-insulator complementary metal-oxide semiconductor (SOI CMOS) process (IBM 45 nm SOI) without any foundry process modifications. The filter shows 1 dB of insertion loss in the drop port with a 3 dB bandwidth of 64 GHz, and 16 dB extinction in the through port. To the best of our knowledge, this is the first implementation of a port-separating, add-drop filter based on standing wave cavities coupled to conventional waveguides, and demonstrates a performance that suggests potential for photonic crystal devices within optical immersion lithography-based advanced CMOS electronics-photonics integration.

Vertically Integrated MEMS SOI Composite Porous Silicon-Crystalline Silicon Cantilever-Array Sensors: Concept for Continuous Sensing of Explosives and Warfare Agents

NASA Astrophysics Data System (ADS)

Stolyarova, Sara; Shemesh, Ariel; Aharon, Oren; Cohen, Omer; Gal, Lior; Eichen, Yoav; Nemirovsky, Yael

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.

Multi-wavelength transceiver integration on SOI for high-performance computing system applications

NASA Astrophysics Data System (ADS)

Aalto, Timo; Harjanne, Mikko; Ylinen, Sami; Kapulainen, Markku; Vehmas, Tapani; Cherchi, Matteo; Neumeyr, Christian; Ortsiefer, Markus; Malacarne, Antonio

2015-03-01

We present a vision for transceiver integration on a 3 μm SOI waveguide platform for systems scalable to Pb/s. We also present experimental results from the first building blocks developed in the EU-funded RAPIDO project. At 1.3 μm wavelength 80 Gb/s per wavelength is to be achieved using hybrid integration of III-V optoelectronics on SOI. Goals include athermal operation, low-loss I/O coupling, advanced modulation formats and packet switching. An example of the design results is an interposer chip that consists of 12 μm thick SOI waveguides locally tapered down to 3 μm to provide low-loss coupling between an optical single-mode fiber array and the 3 μm SOI chip. First example of experimental results is a 4x4 cyclic AWGs with 5 nm channel spacing, 0.4 dB/facet fiber coupling loss, 3.5 dB center-tocenter loss, and -23 dB adjacent channel crosstalk in 3.5x1.5 mm2 footprint. The second example result is a new VCSEL design that was demonstrated to have up to 40 Gb/s operation at 1.55 μm.

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

SOAR Optical Imager (SOI) | SOAR

Science.gov Websites

SPARTAN Near-IR Camera Ohio State Infrared Imager/Spectrograph (OSIRIS) - NO LONGER AVAILABLE SOAR ?: ADS link to SOI instrument SPIE paper Last update: C. Briceño, Aug 23, 2017 SOAR Optical Imager

Heavy neutrino mixing in the T2HK, the T2HKK and an extension of the T2HK with a detector at Oki Islands

NASA Astrophysics Data System (ADS)

Abe, Yugo; Asano, Yusuke; Haba, Naoyuki; Yamada, Toshifumi

2017-12-01

We study the discovery potential for the mixing of heavy isospin-singlet neutrinos in extensions of the Tokai-to-Kamioka (T2K) experiment, the Tokai-to-Hyper-Kamiokande (T2HK), the Tokai-to-Hyper-Kamiokande-to-Korea (T2HKK) with a Korea detector with ˜eq 1000 km baseline length and 1° off-axis angle, and a plan of adding a small detector at Oki Islands to the T2HK. We further pursue the possibility of measuring the neutrino mass hierarchy and the standard CP-violating phase δ _{CP} in the presence of heavy neutrino mixing by fitting data with the standard oscillation parameters only. We show that the sensitivity to heavy neutrino mixing is highly dependent on δ _{CP} and new CP-violating phases in the heavy neutrino mixing matrix, and deteriorates considerably when these phases conspire to suppress interference between the standard oscillation amplitude and an amplitude arising from heavy neutrino mixing, at the first oscillation peak. Although this suppression is avoided by the use of a beam with smaller off-axis angle, the T2HKK and the T2HK+small Oki detector do not show improvement over the T2HK. As for the mass hierarchy measurement, the wrong mass hierarchy is possibly favored in the T2HK because heavy neutrino mixing can mimic matter effects. In contrast, the T2HKK and the T2HK+small Oki detector are capable of correctly measuring the mass hierarchy despite heavy neutrino mixing, as measurements with different baselines resolve degeneracy between heavy neutrino mixing and matter effects. Notably, adding a small detector at Oki to the T2HK drastically ameliorates the sensitivity, which is the central appeal of this paper. As for the δ _{CP} measurement, there can be a sizable discrepancy between the true δ _{CP} and the value obtained by fitting data with the standard oscillation parameters only, which can be comparable to 1σ resolution of the δ _{CP} measurement. Hence, if a hint of heavy neutrino mixing is discovered, it is necessary to incorporate the effects of heavy neutrino mixing to measure δ _{CP} correctly.

SOI MESFETs on high-resistivity, trap-rich substrates

NASA Astrophysics Data System (ADS)

Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

2018-04-01

The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

Listening to data from the 2011 magnitude 9.0 Tohoku-Oki, Japan, earthquake

NASA Astrophysics Data System (ADS)

Peng, Z.; Aiken, C.; Kilb, D. L.; Shelly, D. R.; Enescu, B.

2011-12-01

It is important for seismologists to effectively convey information about catastrophic earthquakes, such as the magnitude 9.0 earthquake in Tohoku-Oki, Japan, to general audience who may not necessarily be well-versed in the language of earthquake seismology. Given recent technological advances, previous approaches of using "snapshot" static images to represent earthquake data is now becoming obsolete, and the favored venue to explain complex wave propagation inside the solid earth and interactions among earthquakes is now visualizations that include auditory information. Here, we convert seismic data into visualizations that include sounds, the latter being a term known as 'audification', or continuous 'sonification'. By combining seismic auditory and visual information, static "snapshots" of earthquake data come to life, allowing pitch and amplitude changes to be heard in sync with viewed frequency changes in the seismograms and associated spectragrams. In addition, these visual and auditory media allow the viewer to relate earthquake generated seismic signals to familiar sounds such as thunder, popcorn popping, rattlesnakes, firecrackers, etc. We present a free software package that uses simple MATLAB tools and Apple Inc's QuickTime Pro to automatically convert seismic data into auditory movies. We focus on examples of seismic data from the 2011 Tohoku-Oki earthquake. These examples range from near-field strong motion recordings that demonstrate the complex source process of the mainshock and early aftershocks, to far-field broadband recordings that capture remotely triggered deep tremor and shallow earthquakes. We envision audification of seismic data, which is geared toward a broad range of audiences, will be increasingly used to convey information about notable earthquakes and research frontiers in earthquake seismology (tremor, dynamic triggering, etc). Our overarching goal is that sharing our new visualization tool will foster an interest in seismology, not just for young scientists but also for people of all ages.

Spatiotemporal variation in the postseismic deformation of the 2011 Tohoku-oki earthquake revealed by seafloor geodetic observations

NASA Astrophysics Data System (ADS)

Tomita, F.; Kido, M.; Ohta, Y.; Hino, R.; Iinuma, T.

2016-12-01

Postseismic deformation following the 2011 Tohoku-oki earthquake has been detected by on- and off-shore geodetic observations. GPS/Acoustic (GPS/A) observations [Watanabe et al., 2014, GRL] just above the coseismic primary rupture area (PRA) show significant landward movement in contrast to the trench-ward movement of the on-shore GPS observations, which can be generally explained by viscoelastic relaxation [Sun et al., 2014, Nature]. Furthermore, Tomita et al. [2015, AGU] demonstrated along-trench variation of the postseismic deformation also using GPS/A observations. In this study, we show detailed spatiotemporal characteristics of the postseismic deformation using updated GPS/A measurement results. We employed 20 GPS/A sites located in Tohoku-oki region and had conducted repeated campaign surveys from Sep. 2012 to May 2016. GPS/A positioning was performed using the method of Kido et al. [2006, EPS]. Then, we calculated postseismic displacement rates by applying a weighted robust linear fitting. The updated results of the postseismic displacement rates are consistent with the characteristic revealed by Tomita et al. [2015] but are estimated with better precision ( 2 cm/yr in 1σ). The sites in the north region of PRA show slight trenchward movement (< 5 cm/yr), while the sites in the south region of PRA show significant trenchward movement (5-15 cm/yr) indicating dominance of the afterslip effects. Moreover, the sites above PRA show significant landward movement (10-15 cm/yr) indicating viscoelastic relaxation and interplate relocking effects. Furthermore, the updated results may show temporal decay of afterslip; the temporally decaying displacements have been observed in the south region of PRA. However, such a temporal decay has not been measured in the region where viscoelastic relaxation causes significant deformation. In the presentation, we will discuss detail spatiotemporal evolution of the postseismic deformation processes from the updated results by comparing with other geodetic observations and studies on the postseismic deformation modeling.

Styrene Oxide Isomerase of Rhodococcus opacus 1CP, a Highly Stable and Considerably Active Enzyme

PubMed Central

Gröning, Janosch A. D.; Tischler, Dirk; Kaschabek, Stefan R.; Schlömann, Michael

2012-01-01

Styrene oxide isomerase (SOI) is involved in peripheral styrene catabolism of bacteria and converts styrene oxide to phenylacetaldehyde. Here, we report on the identification, enrichment, and biochemical characterization of a novel representative from the actinobacterium Rhodococcus opacus 1CP. The enzyme, which is strongly induced during growth on styrene, was shown to be membrane integrated, and a convenient procedure was developed to highly enrich the protein in active form from the wild-type host. A specific activity of about 370 U mg−1 represents the highest activity reported for this enzyme class so far. This, in combination with a wide pH and temperature tolerance, the independence from cofactors, and the ability to convert a spectrum of substituted styrene oxides, makes a biocatalytic application imaginable. First, semipreparative conversions were performed from which up to 760 μmol of the pure phenylacetaldehyde could be obtained from 130 U of enriched SOI. Product concentrations of up to 76 mM were achieved. However, due to the high chemical reactivity of the aldehyde function, SOI was shown to be the subject of an irreversible product inhibition. A half-life of 15 min was determined at a phenylacetaldehyde concentration of about 55 mM, indicating substantial limitations of applicability and the need to modify the process. PMID:22504818

An evaluation of density-dependent and density-independent influences on population growth rates in Weddell seals

USGS Publications Warehouse

Rotella, J.J.; Link, W.A.; Nichols, J.D.; Hadley, G.L.; Garrott, R.A.; Proffitt, K.M.

2009-01-01

Much of the existing literature that evaluates the roles of density-dependent and density-independent factors on population dynamics has been called into question in recent years because measurement errors were not properly dealt with in analyses. Using state-space models to account for measurement errors, we evaluated a set of competing models for a 22-year time series of mark-resight estimates of abundance for a breeding population of female Weddell seals (Leptonychotes weddellii) studied in Erebus Bay, Antarctica. We tested for evidence of direct density dependence in growth rates and evaluated whether equilibrium population size was related to seasonal sea-ice extent and the Southern Oscillation Index (SOI). We found strong evidence of negative density dependence in annual growth rates for a population whose estimated size ranged from 438 to 623 females during the study. Based on Bayes factors, a density-dependence-only model was favored over models that also included en! vironmental covariates. According to the favored model, the population had a stationary distribution with a mean of 497 females (SD = 60.5), an expected growth rate of 1.10 (95% credible interval 1.08-1.15) when population size was 441 females, and a rate of 0.90 (95% credible interval 0.87-0.93) for a population of 553 females. A model including effects of SOI did receive some support and indicated a positive relationship between SOI and population size. However, effects of SOI were not large, and including the effect did not greatly reduce our estimate of process variation. We speculate that direct density dependence occurred because rates of adult survival, breeding, and temporary emigration were affected by limitations on per capita food resources and space for parturition and pup-rearing. To improve understanding of the relative roles of various demographic components and their associated vital rates to population growth rate, mark-recapture methods can be applied that incorporate both environmental covariates and the seal abundance estimates that were developed here. An improved understanding of why vital rates change with changing population abundance will only come as we develop a better understanding of the processes affecting marine food resources in the Southern Ocean.

The Effect of Severity of Illness on Spine Surgery Costs Across New York State Hospitals: An Analysis of 69,831 Cases.

PubMed

Kaye, I David; Adrados, Murillo; Karia, Raj J; Protopsaltis, Themistocles S; Bosco, Joseph A

2017-11-01

Observational database review. To determine the effect of patient severity of illness (SOI) on the cost of spine surgery among New York state hospitals. National health care spending has risen at an unsustainable rate with musculoskeletal care, and spine surgery in particular, accounting for a significant portion of this expenditure. In an effort towards cost-containment, health care payers are exploring novel payment models some of which reward cost savings but penalize excessive spending. To mitigate risk to health care institutions, accurate cost forecasting is essential. No studies have evaluated the effect of SOI on costs within spine surgery. The New York State Hospital Inpatient Cost Transparency Database was reviewed to determine the costs of 69,831 hospital discharges between 2009 and 2011 comprising the 3 most commonly performed spine surgeries in the state. These costs were then analyzed in the context of the specific all patient refined diagnosis-related group (DRG) SOI modifier to determine this index's effect on overall costs. Overall, hospital-reported cost increases with the patient's SOI class and patients with worse baseline health incur greater hospital costs (P<0.001). Moreover, these costs are increasingly variable for each worsening SOI class (P<0.001). This trend of increasing costs is persistent for all 3 DRGs across all 3 years studied (2009-2011), within each of the 7 New York state regions, and occurs irrespective of the hospital's teaching status or size. Using the 3M all patient refined-DRG SOI index as a measure of patient's health status, a significant increase in cost for spine surgery for patients with higher SOI index was found. This study confirms the greater cost and variability of spine surgery for sicker patients and illustrates the inherent unpredictability in cost forecasting and budgeting for these same patients.

Why is the South Orkney Island shelf (the world's first high seas marine protected area) a carbon immobilization hotspot?

PubMed

Barnes, David K A; Ireland, Louise; Hogg, Oliver T; Morley, Simon; Enderlein, Peter; Sands, Chester J

2016-03-01

The Southern Ocean archipelago, the South Orkney Islands (SOI), became the world's first entirely high seas marine protected area (MPA) in 2010. The SOI continental shelf (~44 000 km(2) ), was less than half covered by grounded ice sheet during glaciations, is biologically rich and a key area of both sea surface warming and sea-ice losses. Little was known of the carbon cycle there, but recent work showed it was a very important site of carbon immobilization (net annual carbon accumulation) by benthos, one of the few demonstrable negative feedbacks to climate change. Carbon immobilization by SOI bryozoans was higher, per species, unit area and ice-free day, than anywhere-else polar. Here, we investigate why carbon immobilization has been so high at SOI, and whether this is due to high density, longevity or high annual production in six study species of bryozoans (benthic suspension feeders). We compared benthic carbon immobilization across major regions around West Antarctica with sea-ice and primary production, from remotely sensed and directly sampled sources. Lowest carbon immobilization was at the northernmost study regions (South Georgia) and southernmost Amundsen Sea. However, data standardized for age and density showed that only SOI was anomalous (high). High immobilization at SOI was due to very high annual production of bryozoans (rather than high densities or longevity), which were 2x, 3x and 5x higher than on the Bellingshausen, South Georgia and Amundsen shelves, respectively. We found that carbon immobilization correlated to the duration (but not peak or integrated biomass) of phytoplankton blooms, both in directly sampled, local scale data and across regions using remote-sensed data. The long bloom at SOI seems to drive considerable carbon immobilization, but sea-ice losses across West Antarctica mean that significant carbon sinks and negative feedbacks to climate change could also develop in the Bellingshausen and Amundsen seas. © 2015 John Wiley & Sons Ltd.

Sedimentary processes associated with sand and boulder deposits formed by the 2011 Tohoku-oki tsunami at Sabusawa Island, Japan

NASA Astrophysics Data System (ADS)

Goto, Kazuhisa; Sugawara, Daisuke; Ikema, Satoko; Miyagi, Toyohiko

2012-12-01

This paper reports on the sedimentary processes of sand and boulder deposition at Sabusawa Island, Japan as a result of the 2011 Tohoku-oki tsunami. Boulders were composed of tuffaceous rocks and sourced from an earthquake-triggered slope failure as well as concrete fragments of seawall. They were scattered over the ground surface and did not form boulder ridges, although there was some local imbrication. The boulders were deposited on top of a sand layer indicating that the latter, possibly deposited from bed load, covered the ground surface first. This sand layer probably reduced friction allowing boulders to be transported more easily than might be expected across a hard ground with a high bottom friction. Sand deposits showed landward thinning and fining features, while the boulders showed a landward coarsening (tuffaceous boulders) or a landward fining (concrete boulders), indicating that large clasts were not necessarily scattered randomly but rather might have a clast size gradient with distance inland. These features are explained by the local topographic setting that constrained the directions of incoming and returning tsunami flows. Some clasts at the inland extent of the boulder field were covered by an upward fining sand layer. This feature suggests that the boulders were deposited prior to the suspended sands, with the latter subsequently laid down before the water level dropped below the top of the boulders. Such modern investigations of the sedimentary features of various sizes of grains and clasts immediately after a tsunami provide invaluable data for the reconstruction of inundation processes.

Improving breakdown voltage performance of SOI power device with folded drift region

NASA Astrophysics Data System (ADS)

Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

2016-07-01

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

Shortening gametes co-incubation time improves live birth rate for couples with a history of fragmented embryos.

PubMed

Le Bras, Anne; Hesters, Laetitia; Gallot, Vanessa; Tallet, Cathie; Tachdjian, Gerard; Frydman, Nelly

2017-10-01

Short gamete co-incubation (SGCO) consists in decreasing the duration of contact between oocytes and sperm from the standard overnight insemination (SOI) toward 2 hours. However, the effectiveness of this technique to improve in vitro fertilization and embryo transfer (IVF-ET) outcomes remains controversial. Our study was designed to evaluate the efficiency of SGCO in a poor prognosis population with a history of fragmented embryos defined by the presence of at least 50% of the embryos with more than 25% of cytoplasmic fragments. From January 2010 to January 2014, 97 couples were included in a SGCO protocol. We separated women into 2 subgroups: younger and older than 35 years. Compared to SOI, after SGCO, 2-cell stage embryos were higher in all women (p<0.001) and less fragmented in women over 35 years (p<0.05). On day 2, top quality embryos obtained and transferred were higher with SCGO than with SOI, independently of the age of the women (p<0.001). Moreover, the number of embryos with less than 25% of fragmentation was higher after SGCO than SOI (p<0.001) whereas the number of multinucleated embryos was lower (p<0.001). We observed that after fresh ET, independently of the age of the women, the clinical pregnancy rate was 3 times higher after SGCO than after SOI. However, the live-birth rate was 4 times higher with SGCO than with SOI in women above 35 years but 3 times higher with SGCO than with SOI in women younger than 35 years. The present results indicate that for a particular indication, reducing the time of oocytes and sperm co-incubation may improve IVF-ET outcomes in terms of live-birth rate. AMH: anti mullerian hormone; COC: cumulus-oocytes complex; E2: estradiol; ET: embryo transfer; FET: frozen embryo transfer; FSH: follicle stimulating hormone; GnRH: gonadotrophin releasing hormone; hCG: human chorionic gonadotropin hormone; hMG: human menopausal gonadotropin hormone; IRB: institutional review board; IVF: in vitro fertilization; IVF-ET: in vitro fertilization and embryo transfer; MNB: multinucleated blastomere; mRNA: messanger ribonucleic acid; OC: oocyte retrieval; O2: oxygen; ROS: reactive oxygen species; SGCO: short gamete co-incubation; SOI: standard overnight insemination.

Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

PubMed Central

Henkel, C.; Abermann, S.; Bethge, O.; Pozzovivo, G.; Klang, P.; Stöger-Pollach, M.; Bertagnolli, E.

2011-01-01

Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained. PMID:21461054

Developing Minds: Programs for Teaching Thinking. Revised Edition, Volume 2.

ERIC Educational Resources Information Center

Costa, Arthur L., Ed.

This book contains 29 articles which address topics related to teaching thinking. The articles include: (1) "Balancing Process and Content" (Marilyn Jager Adams); (2) "Structure of Intellect (SOI)" (Mary N. Meeker); (3) "Instrumental Enrichment" (Francis R. Link); (4) "Thinking to Write: Assessing Higher-Order Cognitive Skills and Abilities"…

A photonic crystal ring resonator formed by SOI nano-rods.

PubMed

Chiu, Wei-Yu; Huang, Tai-Wei; Wu, Yen-Hsiang; Chan, Yi-Jen; Hou, Chia-Hunag; Chien, Huang Ta; Chen, Chii-Chang

2007-11-12

The design, fabrication and measurement of a silicon-on-insulator (SOI) two-dimensional photonic crystal ring resonator are demonstrated in this study. The structure of the photonic crystal is comprised of silicon nano-rods arranged in a hexagonal lattice on an SOI wafer. The photonic crystal ring resonator allows for the simultaneous separation of light at wavelengths of 1.31 and 1.55mum. The device is fabricated by e-beam lithography. The measurement results confirm that a 1.31mum/1.55mum wavelength ring resonator filter with a nano-rod photonic crystal structure can be realized.

Hot-carrier-induced current capability degradation and optimization for lateral IGBT on thick SOI substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunwei; Li, Yang; Yue, Wenjing; Fu, Xiaoqian; Li, Zhiming

2018-07-01

In this paper, the hot-carrier-induced current capability degradation of a 600 V lateral insulated gate bipolar transistor (LIGBT) on thick silicon on insulator (SOI) substrate is investigated. Our experiments found that, for the SOI-LIGBT, the worst stress condition is the maximum gate voltage (Vgmax) condition and the current degradation is dominated by the damages in the channel region under the Vgmax stress condition. However, further analyses show that the influence of channel region damages on the collector current degradation increases with the increase of measured collector voltage and is maximum in the current saturation region. Therefore, in our opinion, the hot-carrier-induced current capability degradation of the SOI-LIGBT should be evaluated by the degradation of saturation current under the Vgmax stress condition. In addition, a novel SOI-LIGBT structure with an external p-type region was also proposed, which can alleviate the damage in the channel region by reducing the lateral electric field peak. Our experimental results demonstrate that the proposed structure could optimize the hot-carrier reliability effectively with the other characteristics maintained. He is currently a lecturer at the University of Jinan, Jinan, China. His research interests include power electronics, high voltage devices and the electronics reliability.

An extensive investigation of work function modulated trapezoidal recessed channel MOSFET

NASA Astrophysics Data System (ADS)

Lenka, Annada Shankar; Mishra, Sikha; Mishra, Satyaranjan; Bhanja, Urmila; Mishra, Guru Prasad

2017-11-01

The concept of silicon on insulator (SOI) and grooved gate help to lessen the short channel effects (SCEs). Again the work function modulation along the metal gate gives a better drain current due to the uniform electric field along the channel. So all these concepts are combined and used in the proposed MOSFET structure for more improved performance. In this work, trapezoidal recessed channel silicon on insulator (TRC-SOI) MOSFET and work function modulated trapezoidal recessed channel silicon on insulator (WFM-TRC-SOI) MOSFET are compared with DC and RF parameters and later linearity of both the devices is tested. An analytical model is formulated by using a 2-D Poisson's equation and develops a compact equation for threshold voltage using minimum surface potential. In this work we analyze the effect of negative junction depth and the corner angle on various device parameters such as minimum surface potential, sub-threshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage. The analysis interprets that the switching performance of WFM-TRC-SOI MOSFET surpasses TRC-SOI MOSFET in terms of high Ion/Ioff ratio and also the proposed structure can minimize the short channel effects (SCEs) in RF application. The validity of proposed model has been verified with simulation result performed on Sentaurus TCAD device simulator.

Optical interconnects based on VCSELs and low-loss silicon photonics

NASA Astrophysics Data System (ADS)

Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian

2018-02-01

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Development of Hospitalization Resource Intensity Scores for Kids (H-RISK) and Comparison across Pediatric Populations.

PubMed

Richardson, Troy; Rodean, Jonathan; Harris, Mitch; Berry, Jay; Gay, James C; Hall, Matt

2018-04-25

In the Medicare population, measures of relative severity of illness (SOI) for hospitalized patents have been used in prospective payment models. Similar measures for pediatric populations have not been fully developed. To develop hospitalization resource intensity scores for kids (H-RISK) using pediatric relative weights (RWs) for SOI and to compare hospital types on case-mix index (CMI). Using the 2012 Kids' Inpatient Database (KID), we developed RWs for each All Patient Refined Diagnosis Related Group (APR-DRG) and SOI level. RW corresponded to the ratio of the adjusted mean cost for discharges in an APR-DRG SOI combination over adjusted mean cost of all discharges in the dataset. RWs were applied to every discharge from 3,117 hospitals in the database with at least 20 discharges. RWs were then averaged at the hospital level to provide each hospital's CMI. CMIs were compared by hospital type using Kruskal- Wallis tests. The overall adjusted mean cost of weighted discharges in Healthcare Cost and Utilization Project KID 2012 was $6,135 per discharge. Solid organ and bone marrow transplantations represented 4 of the 10 highest procedural RWs (range: 35.5 to 91.7). Neonatal APRDRG SOIs accounted for 8 of the 10 highest medical RWs (range: 19.0 to 32.5). Free-standing children's hospitals yielded the highest median (interquartile range [IQR]) CMI (2.7 [2.2-3.1]), followed by urban teaching hospitals (1.8 [1.3-2.6]), urban nonteaching hospitals (1.1 [0.9-1.5]), and rural hospitals (0.8 [0.7-0.9]; P < .001). H-RISK for populations of pediatric admissions are sensitive to detection of substantial differences in SOI by hospital type. © 2018 Society of Hospital Medicine.

Development FD-SOI MOSFET Amplifiers for Integrated Read-Out Circuit of Superconducting-Tunnel-Junction Single-Photon-Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiuchi, Kenji; et al.

We proposed a new high-resolution single-photon infrared spectrometer for search for radiative decay of cosmic neutrino background (CνB). The superconducting-tunnel-junctions(STJs) are used as a single-photon counting device. Each STJ consists of Nb/Al/Al xO y/Al/Nb layers, and their thicknesses are optimized for the operation temperature at 370 mK cooled by a 3He sorption refrigerator. Our STJs achieved the leak current 250 pA, and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio (S/N). FD-SOI MOSFETs can be operated at cryogenic temperature ofmore » 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a nonlinear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors is 0.4 mV, and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET-based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp is required to have a fast response (GBW ≥ 100 MHz), and it must have low power dissipation as compared to the cooling power of refrigerator.« less

Preliminary Analysis of Remote Triggered Seismicity in Northern Baja California Generated by the 2011, Tohoku-Oki, Japan Earthquake

NASA Astrophysics Data System (ADS)

Wong-Ortega, V.; Castro, R. R.; Gonzalez-Huizar, H.; Velasco, A. A.

2013-05-01

We analyze possible variations of seismicity in the northern Baja California due to the passage of seismic waves from the 2011, M9.0, Tohoku-Oki, Japan earthquake. The northwestern area of Baja California is characterized by a mountain range composed of crystalline rocks. These Peninsular Ranges of Baja California exhibits high microseismic activity and moderate size earthquakes. In the eastern region of Baja California shearing between the Pacific and the North American plates takes place and the Imperial and Cerro-Prieto faults generate most of the seismicity. The seismicity in these regions is monitored by the seismic network RESNOM operated by the Centro de Investigación Científica y de Educación Superior de Ensenada (CICESE). This network consists of 13 three-component seismic stations. We use the seismic catalog of RESNOM to search for changes in local seismic rates occurred after the passing of surface waves generated by the Tohoku-Oki, Japan earthquake. When we compare one month of seismicity before and after the M9.0 earthquake, the preliminary analysis shows absence of triggered seismicity in the northern Peninsular Ranges and an increase of seismicity south of the Mexicali valley where the Imperial fault jumps southwest and the Cerro Prieto fault continues.

Challenges in managing freshwater fishery resource through Lebak Lebung Auction approach: a case study in Pangkalan Lampam District Ogan Komering Ilir Regency

NASA Astrophysics Data System (ADS)

Muslimin, B.; Suadi

2018-03-01

Responsible management of fishery resources has been a tradition of Ogan Komering Ilir (OKI) of South Sumatera for generations. It was recorded that since 1630 the Dutch Government had made auction policy for managing water territory in OKI Regency as an effort to preserve nature and to avoid the conflict of inland water ownership. Currently, the community-based management model has been adopted by local governments into formal regulations, known as Regional Regulation on Auction of Flood Water Swamp and Rivers (Lelang Lebak Lebung dan Sungai or L3S). This paper describes the success factors and the threats for the failure of the L3S management model in OKI Regency, based on a case study in Pangkalan Lampam District. The study showed that the management mechanism through the L3S system had been well instituted and become a well-established management practice. The management model is in line with the principle of co-management and the approach has become critical success factor in L3S management. However, ecological, economic and social aspects influence the sustainability of such fishery management model. Besides, L3S management model faces limited data and information related to fish stocks, which result in difficulties in determining the total allowable catch.

GENFAS- Decentralised PUS-Based Data Handling Software Using SOIS and SpaceWire

NASA Astrophysics Data System (ADS)

Fowell, Stuart D.; Wheeler, Simon; Mendham, Peter; Gasti, Wahida

2011-08-01

This paper describes GenFAS, a decentralised PUS- based Data Handling onboard software architecture, based on the SOIS and SpaceWire communication specifications. GenFAS was initially developed for and deployed on the MARC system under an ESA GSTP contract.

Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks

NASA Technical Reports Server (NTRS)

Dogan, Numan S.

2003-01-01

The objective of this work is to design and develop Low-Power RF SOI-CMOS Technology for Distributed Sensor Networks. We briefly report on the accomplishments in this work. We also list the impact of this work on graduate student research training/involvement.

Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in Sub-20 nm Bulk/Silicon-on-Insulator NAND Flash Memory

NASA Astrophysics Data System (ADS)

Miyaji, Kousuke; Hung, Chinglin; Takeuchi, Ken

2012-04-01

The scaling trends and limitation in sub-20 nm a bulk and silicon-on-insulator (SOI) NAND flash memory is studied by the three-dimensional (3D) device simulation focusing on short channel effects (SCE), channel boost leakage and channel voltage boosting characteristics during the program-inhibit operation. Although increasing punch-through stopper doping concentration is effective for suppressing SCE in bulk NAND cells, the generation of junction leakage becomes serious. On the other hand, SCE can be suppressed by thinning the buried oxide (BOX) in SOI NAND cells. However, the boosted channel voltage decreases by the higher BOX capacitance. It is concluded that the scaling limitation is dominated by the junction leakage and channel boosting capability for bulk and SOI NAND flash cells, respectively, and the scaling limit is decreased to 9 nm using SOI NAND flash memory cells from 13 nm in bulk NAND flash memory cells.

Spin-orbit interaction and negative magnetoresistance for localized electrons in InSb quantum wells

NASA Astrophysics Data System (ADS)

Ishida, S.; Manago, T.; Nishizako, N.; Geka, H.; Shibasaki, I.

2010-02-01

Weak-field magnetoresistance (MR) in the variable-range hopping (VRH) in the presence of spin-orbit interaction (SOI) for 2DEGs at the hetero-interface of InSb quantum wells was examined in view of the quantum interference (QI) effect. Samples with the sheet resistance, ρ> ρc= h/ e2, exhibit VRH, while those with ρ< ρc exhibit weak localiz ation (WL) at low temperatures, where h/ e2 is the quantum resistance. In the WL regime, a positive magnetoresistance (MR) peak due to the weak anti-localization (WAL) with SOI is clearly observed in low magnetic field. In contrast, the low-field hopping MR remains entirely negative surviving the SOI, indicating that the hopping MR due to the QI is completely negative regardless of the SOI. This result supports the predictions based on the directed-path approach for forward-scattering paths ignoring the back-scattering return loops for the QI in the VRH.

Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide.

PubMed

Min Lee, Seung; Hwan Yum, Jung; Larsen, Eric S; Chul Lee, Woo; Keun Kim, Seong; Bielawski, Christopher W; Oh, Jungwoo

2017-10-16

Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Biodiesel sensing using silicon-on-insulator technologies

NASA Astrophysics Data System (ADS)

Casas Bedoya, Alvaro; Ling, Meng Y.; Brouckaert, Joost; Yebo, Nebiyu A.; Van Thourhout, Dries; Baets, Roel G.

2009-05-01

By measuring the transmission of Biodiesel/Diesel mixtures in the near- and far-infrared wavelength ranges, it is possible to predict the blend level with a high accuracy. Conventional photospectrometers are typically large and expensive and have a performance that often exceeds the requirements for most applications. For automotive applications for example, what counts is size, robustness and most important cost. As a result the miniaturization of the spectrometer can be seen as an attractive implementation of a Biodiesel sensor. Using Silicon-on-Insulator (SOI) this spectrometer miniaturization can be achieved. Due to the large refractive index contrast of the SOI material system, photonic devices can be made very compact. Moreover, they can be manufactured on high-quality SOI substrates using waferscale CMOS fabrication tools, making them cheap for the market. In this paper, we show that it is possible to determine Biodiesel blend levels using an SOI spectrometer-on-a-chip. We demonstrate absorption measurements using spiral shaped waveguides and we also present the spectrometer design for on-chip Biodiesel blend level measurements.

Job and life satisfaction and preference of future practice locations of physicians on remote islands in Japan.

PubMed

Nojima, Yoshiaki; Kumakura, Shunichi; Onoda, Keiichi; Hamano, Tsuyoshi; Kimura, Kiyoshi

2015-05-26

The objective of this research is to investigate job and life satisfaction and preference of future practice locations of physicians in rural and remote islands in Japan. A cross-sectional study was conducted for physicians who reside or resided on the Oki islands: isolated islands situated in the Sea of Japan between the Eurasian continent and the mainland of Japan. A questionnaire was sent to physicians on the Oki islands to evaluate physician satisfaction regarding job environment, career development, living conditions, salary, and support by local government. Data was analysed for 49 physicians; 47 were male and 2 were female, and the mean ± SD age was 44.3 ± 10.9 years. Among the variables related to physicians' satisfaction, most of the physicians (>90%) were satisfied with "team work" and "salary". On the other hand, the majority of physicians (approximately 70%) were not satisfied with the "opportunity to continue professional development". Age ≥ 50 years, graduates of medical schools other than Jichi Medical University (established in 1972 with the aim to produce rural physicians), self-selected the Oki islands as a practice location, and satisfaction in "work as a doctor", "opportunity to consult with peers about patients", "relationship with people in the community", and "acceptance by community" were found to be significant factors influencing the choice of the Oki islands as a future practice location. Factors influencing future practice locations on the remote islands were included in a self-reported questionnaire which illustrated the importance of factors that impact both the spouses and children of physicians. Improving work satisfaction, providing outreach support programmes for career development and professional support in rural practice, and building appropriate relationships between physicians and people in the community, which can in turn improve work satisfaction, may contribute to physicians' choices of practising medicine on rural and remote islands in Japan. Addressing family issues is also crucial in encouraging the choice of a rural medical practice location.

Seafloor seismological/geodetic observations in the rupture area of the 2011 Tohoku-oki Earthquake

NASA Astrophysics Data System (ADS)

Hino, Ryota; Shinohara, Masanao; Ito, Yoshihiro

2016-04-01

A number of important aspects of the 2011 Tohoku-oki earthquake (Mw 9.0) were clarified by the seafloor seismological and geodetic observation above the rupture area of the earthquake. Besides the extraordinarily large coseismic displacements, various kinds of slow slip phenomena associated with intensive micro-seismicity on the plate boundary fault were identified by near field ocean bottom seismographs and seafloor geodetic observation networks. The Tohoku-oki earthquake was preceded by evident foreshock activity with a spatial expansion of this seismicity. The activity became significantly intense after the occurrence of the largest foreshock two days before the mainshock rupture. During the period, clear continuous seafloor deformation was identified caused by the aseismic slip following the largest foreshock. Another different type of aseismic slip event had occurred before this pre-imminent activity had started about a month before the largest foreshock happened. The observed increased seismicity associated with aseismic slip suggests that there must have been some chain reaction like interplay of seismic and interseismic slips before the large earthquake broke out. However, no evident deformation signals were observed indicating acceleration of fault slip immediately before the mainshock. Seafloor geodetic measurements reveals that the postseismic deformation around the rupture area of the Tohoku-oki earthquake shows complex spatial pattern and the complexity is mostly due to significant viscoelastic relaxation induced by the huge coseismic slip. The effects of viscoelastic deformation makes it difficult to identify the deformation associated with the after slip or regaining of interplate coupling and requires us to enhance the abilities of seafloor monitoring to detect the slip activities on the fault. We started an array of seismometer arrays observation including broad-band seismographs to detect and locate slow-slip events and low-frequency tremors. Another observation we started is direct-path acoustic ranging across the trench axis. Slip rate of the shallow fault can be measured by monitoring the change in distance between the benchmarks on the incoming and overrding plates.

Process-conditioned bias correction for seasonal forecasting: a case-study with ENSO in Peru

NASA Astrophysics Data System (ADS)

Manzanas, R.; Gutiérrez, J. M.

2018-05-01

This work assesses the suitability of a first simple attempt for process-conditioned bias correction in the context of seasonal forecasting. To do this, we focus on the northwestern part of Peru and bias correct 1- and 4-month lead seasonal predictions of boreal winter (DJF) precipitation from the ECMWF System4 forecasting system for the period 1981-2010. In order to include information about the underlying large-scale circulation which may help to discriminate between precipitation affected by different processes, we introduce here an empirical quantile-quantile mapping method which runs conditioned on the state of the Southern Oscillation Index (SOI), which is accurately predicted by System4 and is known to affect the local climate. Beyond the reduction of model biases, our results show that the SOI-conditioned method yields better ROC skill scores and reliability than the raw model output over the entire region of study, whereas the standard unconditioned implementation provides no added value for any of these metrics. This suggests that conditioning the bias correction on simple but well-simulated large-scale processes relevant to the local climate may be a suitable approach for seasonal forecasting. Yet, further research on the suitability of the application of similar approaches to the one considered here for other regions, seasons and/or variables is needed.

Some material structural properties of SOI substrates produced by SDB technology

NASA Astrophysics Data System (ADS)

Hui, Li; Guo-Liang, Sun; Juan, Zhan; Qin-Yi, Tong

1987-10-01

SOI substrates have been produced by silicon direct bonding (SDB) technology. Thermal oxides ranging in thickness from native oxide to 1 μm or even more, on either or both wafers have been bonded successfully. The fracture strength of the SOI layer is 130-200 kg/cm 2 which is similar to the value of intrinsic bulk silicon. Dislocations have been shown to be concentrated on the backsides of the substrate and no additional defects have been developed within 80 μm of the Si-SiO 2 bonding area. Mobility and minority carrier lifetime similar to that of the original bulk silicon have been obtained after annealing.

Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates

NASA Astrophysics Data System (ADS)

Sakaike, Kohei; Akazawa, Muneki; Nakagawa, Akitoshi; Higashi, Seiichiro

2015-04-01

A novel low-temperature technique for transferring a silicon-on-insulator (SOI) layer with a midair cavity (supported by narrow SiO2 columns) by meniscus force has been proposed, and a single-crystalline Si (c-Si) film with a midair cavity formed in dog-bone shape was successfully transferred to a poly(ethylene terephthalate) (PET) substrate at its heatproof temperature or lower. By applying this proposed transfer technique, high-performance c-Si-based complementary metal-oxide-semiconductor (CMOS) transistors were successfully fabricated on the PET substrate. The key processes are the thermal oxidation and subsequent hydrogen annealing of the SOI layer on the midair cavity. These processes ensure a good MOS interface, and the SiO2 layer works as a “blocking” layer that blocks contamination from PET. The fabricated n- and p-channel c-Si thin-film transistors (TFTs) on the PET substrate showed field-effect mobilities of 568 and 103 cm2 V-1 s-1, respectively.

Amorphous silicon as high index photonic material

NASA Astrophysics Data System (ADS)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Fabrication of high aspect ratio structure and its releasing for silicon on insulator MEMS/MOEMS device application

NASA Astrophysics Data System (ADS)

Fan, Ji; Zhang, Wen Ting; Liu, Jin Quan; Wu, Wen Jie; Zhu, Tao; Tu, Liang Cheng

2015-04-01

We systematically investigate the fabrication and dry-release technology for a high aspect ratio (HAR) structure with vertical and smooth silicon etching sidewalls. One-hundred-micrometer silicon on insulator (SOI) wafers are used in this work. By optimizing the process parameters of inductively coupled plasma deep reactive-ion etching, a HAR (˜25∶1) structure with a microtrench width of 4 μm has been demonstrated. A perfect etching profile has been obtained in which the structures present an almost perfect verticality of 0.10 μm and no sidewall scallops. The root-mean square roughness of silicon sidewalls is 20 to 29 nm. An in situ dry-release method using notching effect is employed after etching. By analysis, we found that the final notch length is typically an aspect-ratio-dependent process. The structure designed in this work has been successfully released by this in situ dry-release method, and the released bottom roughness effectively prohibits the stiction mechanism. The results demonstrate potential applications for design and fabrication of HAR SOI MEMS/MOEMS.

Homelessness, bedspace and the case for Housing First in Canada.

PubMed

Evans, Joshua; Collins, Damian; Anderson, Jalene

2016-11-01

The act of problem formation is integral to the policymaking process. Moreover, the process by which certain situations, experiences or events are rendered problematic hinges upon the places, spaces and networks through which the issue is made visible and intelligible to policy makers and decision makers. In this paper, we explore these epistemic geographies by unpacking one such example - the Mental Health Commission of Canada's At Home/Chez Soi study - a federally funded, $110 million field trial of the Housing First (HF) model. HF prioritizes rapid rehousing of the chronically homeless, followed by separate support and treatment services. The model has become widespread in Canada since 2005, based in large part on understandings of its cost-effectiveness. In this article, we utilize At Home/Chez Soi as an illustrative case for examining how 'chronic homelessness' is translated into a discourse of costs and benefits, and given an accounting value, through a series of translations. This problematization advances a particular logic - what we refer to as 'bedspace'. Copyright © 2016 Elsevier Ltd. All rights reserved.

Monitoring of the spatio-temporal change in the interplate coupling at northeastern Japan subduction zone based on the spatial gradients of surface velocity field

NASA Astrophysics Data System (ADS)

Iinuma, Takeshi

2018-04-01

A monitoring method to grasp the spatio-temporal change in the interplate coupling in a subduction zone based on the spatial gradients of surface displacement rate fields is proposed. I estimated the spatio-temporal change in the interplate coupling along the plate boundary in northeastern (NE) Japan by applying the proposed method to the surface displacement rates based on global positioning system observations. The gradient of the surface velocities is calculated in each swath configured along the direction normal to the Japan Trench for time windows such as 0.5, 1, 2, 3 and 5 yr being shifted by one week during the period of 1997-2016. The gradient of the horizontal velocities is negative and has a large magnitude when the interplate coupling at the shallow part (less than approximately 50 km in depth) beneath the profile is strong, and the sign of the gradient of the vertical velocity is sensitive to the existence of the coupling at the deep part (greater than approximately 50 km in depth). The trench-parallel variation of the spatial gradients of a displacement rate field clearly corresponds to the trench-parallel variation of the amplitude of the interplate coupling on the plate interface, as well as the rupture areas of previous interplate earthquakes. Temporal changes in the trench-parallel variation of the spatial gradient of the displacement rate correspond to the strengthening or weakening of the interplate coupling. We can monitor the temporal change in the interplate coupling state by calculating the spatial gradients of the surface displacement rate field to some extent without performing inversion analyses with applying certain constraint conditions that sometimes cause over- and/or underestimation at areas of limited spatial resolution far from the observation network. The results of the calculation confirm known interplate events in the NE Japan subduction zone, such as the post-seismic slip of the 2003 M8.0 Tokachi-oki and 2005 M7.2 Miyagi-oki earthquakes and the recovery of the interplate coupling around the rupture area of the 1994 M7.6 Sanriku-Haruka-oki earthquake. The results also indicate the semi-periodic occurrence of slow slip events and the expansion of the area of slow slip events before the 2011 Tohoku-oki earthquake (M9.0) approaching the hypocentre of the Tohoku-oki earthquake.

Characteristic of the postseismic deformation following the 2011 Sanriku-Oki earthquake (Mw 7.2) by comparing the 1989 and 1992 Sanriku-Oki events

NASA Astrophysics Data System (ADS)

Ohta, Yusaku; Hino, Ryota; Ariyoshi, Keisuke; Matsuzawa, Toru; Mishina, Masaaki; Sato, Tadahiro; Tachibana, Kenji; Demachi, Tomotsugu; Miura, Satoshi

2013-04-01

The March 11, 2011, moment magnitude (Mw) 9.0 Tohoku earthquake (hereafter referred to as the mainshock) generated a large tsunami, which caused devastating damage and the loss of more than 15,800 lives. On March 9, 2011 at 2:45 (UTC), an M7.3 interplate earthquake (hereafter referred to as the foreshock) occurred ~45 km northeast of the epicenter of the Mw9.0 mainshock. The focal mechanism estimated by the National Research Institute for Earth Science and Disaster Prevention (NIED) incorporates reverse fault motion with a west-northwest to east-southeast compression axis. This foreshock preceded the 2011 Tohoku earthquake by 51 h. Kato et al. [Science, 2012] pointed out aftershock migration after the foreshock along the trench axis toward the epicenter of the Mw9.0 mainshock on the basis of an earthquake catalog, which was created using a waveform correlation technique. They also estimated aseismic slip amount by the repeating earthquake analysis. Ohta et al. [GRL, 2012] proposed a coseismic and postseismic afterslip model of the foreshock based on a GPS network and ocean bottom pressure gauge sites. The estimated coseismic slip and afterslip areas show complementary spatial distributions. The slip amount for the afterslip is roughly consistent with that determined by repeating earthquake analysis carried out by Kato et al. [2012]. Ohta et al. [2012] also pointed out a volumetric strainmeter time series suggests that this event advanced with a rapid decay time constant compared with other typical large earthquakes. For verification of this exception, we investigated the postseismic deformation characteristic following the 1989 and 1992 Sanriku-Oki earthquake, which occurred 100-150 km north of the epicenter of the 2011 Sanriku-Oki event. We used four components extensometer of the Tohoku University at Miyako (39.59N, 141.98E) on the Sanriku coast for these events. To extract the characteristics of the postseismic deformation, we fitted the logarithmic function. The estimated decay time constant was relatively small compared with the typical interplate earthquakes in a similar fashion to 2011 Sanriku-Oki event. Our result suggests that the short decay time of the postseismic deformation is characteristic of this region. The exact reason of short decay time for these afterslips is unclear at present, but it was possibly controlled by the frictional property on the plate interface, especially effective normal stress controlled by fluid.

Design, modeling, and fabrication of crab-shape capacitive microphone using silicon-on-isolator wafer

NASA Astrophysics Data System (ADS)

Ganji, Bahram Azizollah; Sedaghat, Sedighe Babaei; Roncaglia, Alberto; Belsito, Luca; Ansari, Reza

2018-01-01

This paper presents design, modeling, and fabrication of a crab-shape microphone using silicon-on-isolator (SOI) wafer. SOI wafer is used to prevent the additional deposition of sacrificial and diaphragm layers. The holes have been made on diaphragm to prevent back plate etching. Dry etching is used for removing the sacrificial layer, because wet etching causes adhesion between the diaphragm and the back plate. Crab legs around the perforated diaphragm allow for improving the microphone performance and reducing the mechanical stiffness and air damping of the microphone. In this structure, the supply voltage is decreased due to the uniform deflection of the diaphragm due to the designed low-K (spring constant) structure. An analytical model of the structure for description of microphone behavior is presented. The proposed method for estimating the basic parameters of the microphone is based on the calculation of the spring constant using the energy method. The microphone is fabricated using only one mask to pattern the crab-shape diaphragm, resulting in a low-cost and easy fabrication process. The diaphragm size is 0.3 mm×0.3 mm, which is smaller than the conventional microelectromechanical systems capacitive microphone. The results show that the analytical equations have a good agreement with measurement results. The device has the pull-in voltage of 14.3 V, a resonant frequency of 90 kHz, an open-circuit sensitivity of 1.33 mV/Pa under bias voltage of 5 V. Comparing with previous works, this microphone has several advantages: SOI wafer decreases the fabrication process steps, the microphone is smaller than the previous works, and crab-shape diaphragm improves the microphone performances.

A Systematic Study of the Effect of Spin-Orbit Interaction on Properties of Tetravalent and Pentavalent Iridate Compounds

NASA Astrophysics Data System (ADS)

Terzic, Jasminka

Previous studies of iridates have shown that an interplay of strong SOI, Coulomb interaction U, Hund's rule coupling and crystalline electric fields result in unexpected insulating states with complex magnetic states. The novel Jeff =1/2 insulating state first observed in Sr2IrO4 is a direct consequence of such an intriguing interplay and is one of the central foci of this dissertation study. The work presented here consists of three projects: (1) Effects of Tb doping on Sr2IrO4 having tetravalent Ir4+ (5d5) ions; (2) Emergence of unexpected magnetic states in double-perovskite (Ba1-xSr x)2YIrO6 with pentavalent Ir5+ (5d4) ions in the presence of strong SOI, and ( 3) The coexistence of a charge and magnetic order in a magnetic dimer chain system, Ba5AlIr2O11, which has both tetravalent Ir4+ (5d5) and pentavalent Ir5+ (5d4) ions. A significant portion of this dissertation will focus on Tb doped Sr 2IrO4. A central finding of this work is that slight Tb doping (3%) readily suppresses the antiferromagnetic state but retains the insulating state, indicating an unusual correlation between the magnetic and insulating states as a result of the presence of the strong SOI. However, SOI is not the only significant phenomenon. The study on the double-perovskite (Ba1-xSrx)2YIrO6 revealed an exotic magnetic ground state, in sharp contrast to the anticipated singlet ground state in the strong SOI limit, raising an urgent question: is SOI as dominant as was initially anticipated in the iridates? Finally, this study turns to a system containing both Ir4+ and Ir5+ ions, Ba5AlIr2O11. This system features dimer chains of two inequivalent octahedra occupied by tetravalent Ir4+ (5d5) and pentavalent Ir 5+ (5d4) ions respectively. Ba5AlIr 2O11 undergoes charge and magnetic order transitions at 210 K and 4.5 K, respectively. SOI-driven physics is a rapidly evolving field with an ever growing list of theoretical proposals which have enjoyed very limited experimental confirmation thus far. This study has revealed a large range of interesting phenomena in the iridates that defy conventional theoretical arguments and that help to fill an experimental void in this field. Keywords: spin-orbit interaction (SOI), iridates, double exchange, Mott insulator, Coulomb interaction, Hund's rule coupling.

TID Simulation of Advanced CMOS Devices for Space Applications

NASA Astrophysics Data System (ADS)

Sajid, Muhammad

2016-07-01

This paper focuses on Total Ionizing Dose (TID) effects caused by accumulation of charges at silicon dioxide, substrate/silicon dioxide interface, Shallow Trench Isolation (STI) for scaled CMOS bulk devices as well as at Buried Oxide (BOX) layer in devices based on Silicon-On-Insulator (SOI) technology to be operated in space radiation environment. The radiation induced leakage current and corresponding density/concentration electrons in leakage current path was presented/depicted for 180nm, 130nm and 65nm NMOS, PMOS transistors based on CMOS bulk as well as SOI process technologies on-board LEO and GEO satellites. On the basis of simulation results, the TID robustness analysis for advanced deep sub-micron technologies was accomplished up to 500 Krad. The correlation between the impact of technology scaling and magnitude of leakage current with corresponding total dose was established utilizing Visual TCAD Genius program.

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Coleman, P. G.; Nash, D.; Edwardson, C. J.; Knights, A. P.; Gwilliam, R. M.

2011-07-01

Variable-energy positron annihilation spectroscopy (VEPAS) has been applied to the study of the formation and evolution of vacancy-type defect structures in silicon (Si) and the 1.5 μm thick Si top layer of silicon-on-insulator (SOI) samples. The samples were implanted with 2 MeV Si ions at fluences between 1013 and 1015 cm-2, and probed in the as-implanted state and after annealing for 30 min at temperatures between 350 and 800 °C. In the case of SOI the ions were implanted such that their profile was predominantly in the insulating buried oxide layer, and thus their ability to combine with vacancies in the top Si layer, and that of other interstitials beyond the buried oxide, was effectively negated. No measurable differences in the positron response to the evolution of small clusters of n vacancies (Vn, n ˜ 3) in the top Si layer of the Si and SOI samples were observed after annealing up to 500 °C; at higher temperatures, however, this response persisted in the SOI samples as that in Si decreased toward zero. At 700 and 800 °C the damage in Si was below detectable levels, but the VEPAS response in the top Si layer in the SOI was consistent with the development of nanovoids.

Integrated Optics for Planar imaging and Optical Signal Processing

NASA Astrophysics Data System (ADS)

Song, Qi

Silicon photonics is a subject of growing interest with the potential of delivering planar electro-optical devices with chip scale integration. Silicon-on-insulator (SOI) technology has provided a marvelous platform for photonics industry because of its advantages in integration capability in CMOS circuit and countless nonlinearity applications in optical signal processing. This thesis is focused on the investigation of planar imaging techniques on SOI platform and potential applications in ultra-fast optical signal processing. In the first part, a general review and background introduction about integrated photonics circuit and planar imaging technique are provided. In chapter 2, planar imaging platform is realized by a silicon photodiode on SOI chip. Silicon photodiode on waveguide provides a high numerical aperture for an imaging transceiver pixel. An erbium doped Y2O3 particle is excited by 1550nm Laser and the fluorescent image is obtained with assistance of the scanning system. Fluorescence image is reconstructed by using image de-convolution technique. Under photovoltaic mode, we use an on-chip photodiode and an external PIN photodiode to realize similar resolution as 5μm. In chapter 3, a time stretching technique is developed to a spatial domain to realize a 2D imaging system as an ultrafast imaging tool. The system is evaluated based on theoretical calculation. The experimental results are shown for a verification of system capability to imaging a micron size particle or a finger print. Meanwhile, dynamic information for a moving object is also achieved by correlation algorithm. In chapter 4, the optical leaky wave antenna based on SOI waveguide has been utilized for imaging applications and extensive numerical studied has been conducted. and the theoretical explanation is supported by leaky wave theory. The highly directive radiation has been obtained from the broadside with 15.7 dB directivity and a 3dB beam width of ΔØ 3dB ≈ 1.65° in free space environment when β -1 = 2.409 × 105/m, α=4.576 ×103/m. At the end, electronics beam-steering principle has been studied and the comprehensive model has been built to explain carrier transformation behavior in a PIN junction as individual silicon perturbation. Results show that 1019/cm3 is possible obtained with electron injection mechanism. Although the radiation modulation based on carrier injection of 1019/cm3 gives 0.5dB variation, resonant structure, such as Fabry Perrot Cavity, can be integrated with LOWAs to enhance modulation effect.

28 CFR 345.73 - Procedures for granting awards for suggestions or inventions.

Code of Federal Regulations, 2010 CFR

2010-07-01

... suggestions or inventions. 345.73 Section 345.73 Judicial Administration FEDERAL PRISON INDUSTRIES, INC... for granting awards for suggestions or inventions. Inmate suggestions for improvements in operations... the SOI. (b) The SOI shall ensure that all inmate suggestions and/or inventions formally submitted are...

A Kindergarten Teacher Bringing Science to a Community

ERIC Educational Resources Information Center

Theis, Becky; Galindo, Ed; Shockey, Tod

2014-01-01

The National Aeronautical and Space Administration (NASA) sponsored professional development of educators in the NASA Summer of Innovation (SOI) program. The Idaho, Montana, and Utah (IMU-SOI) program worked with educators and students from thirteen Native American communities. The summer sessions were focused on problem based learning and…

Recharge Data for Hawaii Island

DOE Data Explorer

Nicole Lautze

2015-01-01

Recharge data for Hawaii Island in shapefile format. The data are from the following sources: Whittier, R.B and A.I. El-Kadi. 2014. Human Health and Environmental Risk Ranking of On-Site Sewage Disposal systems for the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final, Prepared for Hawaii Dept. of Health, Safe Drinking Water Branch by the University of Hawaii, Dept. of Geology and Geophysics. Oki, D. S. 1999. Geohydrology and Numerical Simulation of the Ground-Water Flow System of Kona, Island of Hawaii. U.S. Water-Resources Investigation Report: 99-4073. Oki, D. S. 2002. Reassessment of Ground-water Recharge and Simulated Ground-Water Availability for the Hawi Area of North Kohala, Hawaii. U.S. Geological Survey Water-Resources Investigation report 02-4006.

GSFC Technical Outreach: The Capitol College Model

NASA Technical Reports Server (NTRS)

Marius, Julio L.; Wagner, David

2008-01-01

In February 2005, as part of the National Aeronautic and Space Administration (NASA) Technical Outreach Program, Goddard Space Flight Center (GSFC) awarded Capitol College of Laurel, Maryland an Educational Grant to establish a Space Operation academic curriculum to meet the future needs of mission operations engineers. This was in part due to the aerospace industry and GSFC concerns that a large number of professional engineers are projected to retire in the near term with evidence showing that current enrollment in engineering schools will not produce sufficient number of space operation trained engineers that will meet industry and government demands. Capitol College, under the agreement of the Educational Grant, established the Space Operations Institute (SOI) with a new curriculum in Space Operations that was approved and certified by the State of Maryland. The SO1 programs focuses on attracting, recruiting, and training a pipeline of highly qualified engineers with experience in mission operations, system engineering and development. The selected students are integrated as members of the engineering support team in any of the missions supported by the institute. The students are mentored by professional engineers from several aerospace companies that support GSFC. Initially, the institute was involved in providing console engineers and mission planning trainees for the Upper Atmosphere Research Satellite (UARS), the Earth Radiation Budget Satellite (ERBS) and the Total Ozone Mapping Spectrometer mission (TOMS). Subsequently, the students were also involved in the technology refresh of the TOMS ground system and other mission operations development. Further mission assignment by GSFC management included participation in the Tropical Rainfall Measuring Mission (TRMM) mission operations and ground system technology refresh. The SOI program has been very successful. Since October 2005, sixty-four students have been enrolled in the SOI program and twenty-five have already graduated from the program, nineteen of whom are employed by company's supporting GSFC. Due to the success of the program, the initial grant period was extended for another period of two years. This paper presents the process that established the SOI as a viable pipeline of mission operations engineers, the lessons learned in the process of dealing with grants, and experience gained in mentoring engineering students that are responsible for particular areas of expertise and functionality. This paper can also be considered a case study and model for integrating a student team with government and industry professionals in the real world of mission operations.

A Wide Range Temperature Sensor Using SOI Technology

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik E.; Hammoud, Ahmad

2009-01-01

Silicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

NASA Astrophysics Data System (ADS)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Patterning of graphene on silicon-on-insulator waveguides through laser ablation and plasma etching

NASA Astrophysics Data System (ADS)

Van Erps, Jürgen; Ciuk, Tymoteusz; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Van Put, Steven; Van Steenberge, Geert; Baert, Kitty; Terryn, Herman; Thienpont, Hugo; Vermeulen, Nathalie

2016-05-01

We present the use of femtosecond laser ablation for the removal of monolayer graphene from silicon-on-insulator (SOI) waveguides, and the use of oxygen plasma etching through a metal mask to peel off graphene from the grating couplers attached to the waveguides. Through Raman spectroscopy and atomic force microscopy, we show that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method. This loss contribution is measured to be 0.132 dB/μm.

Two-mode division multiplexing in a silicon-on-insulator ring resonator.

PubMed

Dorin, Bryce A; Ye, Winnie N

2014-02-24

Mode-division multiplexing (MDM) is an emerging multiple-input multiple-output method, utilizing multimode waveguides to increase channel numbers. In the past, silicon-on-insulator (SOI) devices have been primarily focused on single-mode waveguides. We present the design and fabrication of a two-mode SOI ring resonator for MDM systems. By optimizing the device parameters, we have ensured that each mode is treated equally within the ring. Using adiabatic Bezier curves in the ring bends, our ring demonstrated a signal-to-crosstalk ratio above 18 dB for both modes at the through and drop ports. We conclude that the ring resonator has the potential for filtering and switching for MDM systems on SOI.

Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

NASA Technical Reports Server (NTRS)

Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

2007-01-01

We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

28 CFR 345.42 - Inmate worker dismissal.

Code of Federal Regulations, 2010 CFR

2010-07-01

... worker dismissal. The SOI may remove an inmate from Industries work status in cooperation with the unit team. (a) The SOI may remove an inmate from FPI work status according to the conditions outlined in the pay and benefits section of this policy and in cooperation with the unit team. (b) An inmate may be...

Analysis of Dynamic Avalanche Phenomenon in SOI Lateral High-speed Diode during Reverse Recovery and Development of a Novel Device Structure for Suppressing Dynamic Avalanche

NASA Astrophysics Data System (ADS)

Tokura, Norihito; Yamamoto, Takao; Kato, Hisato; Nakagawa, Akio

We have studied the dynamic avalanche phenomenon in an SOI lateral diode during reverse recovery by using a mixed-mode device simulation. In the study, it has been found that local impact ionization occurs near an anode-side field oxide edge, where a high-density hole current flows and a high electric field appears simultaneously. We propose that a p-type anode extension region (AER) along a trench side wall effectively sweeps out stored carriers beneath an anode p-diffusion layer during reverse recovery, resulting in reduction of the electric field and remarkable suppression of the dynamic avalanche. The AER reduces the total recovery charge and does not cause any increase in the total stored charge under a forward bias operation. This effect is verified experimentally by the fabricated device with AER. Thus, the developed SOI lateral diode is promising as a high-speed and highly rugged free-wheeling diode, which can be integrated into next-generation SOI microinverters.

A MEMS SOI-based piezoresistive fluid flow sensor

NASA Astrophysics Data System (ADS)

Tian, B.; Li, H. F.; Yang, H.; Song, D. L.; Bai, X. W.; Zhao, Y. L.

2018-02-01

In this paper, a SOI (silicon-on-insulator)-based piezoresistive fluid flow sensor is presented; the presented flow sensor mainly consists of a nylon sensing head, stainless steel cantilever beam, SOI sensor chip, printed circuit board, half-cylinder gasket, and stainless steel shell. The working principle of the sensor and some detailed contrastive analysis about the sensor structure were introduced since the nylon sensing head and stainless steel cantilever beam have distinct influence on the sensor performance; the structure of nylon sensing head and stainless steel cantilever beam is also discussed. The SOI sensor chip was fabricated using micro-electromechanical systems technologies, such as reactive ion etching and low pressure chemical vapor deposition. The designed fluid sensor was packaged and tested; a calibration installation system was purposely designed for the sensor experiment. The testing results indicated that the output voltage of the sensor is proportional to the square of the fluid flow velocity, which is coincident with the theoretical derivation. The tested sensitivity of the sensor is 3.91 × 10-4 V ms2/kg.

Measurement Matrix Design for Phase Retrieval Based on Mutual Information

NASA Astrophysics Data System (ADS)

Shlezinger, Nir; Dabora, Ron; Eldar, Yonina C.

2018-01-01

In phase retrieval problems, a signal of interest (SOI) is reconstructed based on the magnitude of a linear transformation of the SOI observed with additive noise. The linear transform is typically referred to as a measurement matrix. Many works on phase retrieval assume that the measurement matrix is a random Gaussian matrix, which, in the noiseless scenario with sufficiently many measurements, guarantees invertability of the transformation between the SOI and the observations, up to an inherent phase ambiguity. However, in many practical applications, the measurement matrix corresponds to an underlying physical setup, and is therefore deterministic, possibly with structural constraints. In this work we study the design of deterministic measurement matrices, based on maximizing the mutual information between the SOI and the observations. We characterize necessary conditions for the optimality of a measurement matrix, and analytically obtain the optimal matrix in the low signal-to-noise ratio regime. Practical methods for designing general measurement matrices and masked Fourier measurements are proposed. Simulation tests demonstrate the performance gain achieved by the proposed techniques compared to random Gaussian measurements for various phase recovery algorithms.

The Southern Oscillation and Prediction of `Der' Season Rainfall in Somalia.

NASA Astrophysics Data System (ADS)

Hutchinson, P.

1992-05-01

Somalia survives in semiarid to arid conditions, with annual rainfall totals rarely exceeding 700 mm, which are divided between two seasons. Many areas are arid, with negligible precipitation. Seasonal totals are highly variable. Thus, any seasonal rainfall forecast would be of significant importance to both the agricultural and animal husbandry communities. An investigation was carried out to determine whether there is a relationship between the Southern Oscillation and seasonal rainfall. No relationship exists between the Southern Oscillation and rainfall during the midyear `Gu' season, but it is shown that the year-end `Der' season precipitation is attected by the Southern Oscillation in southern and central areas of Somalia. Three techniques were used: correlation, regression, and simple contingency tables. Correlations between the SOI (Southern Oscillation index) and seasonal rainfall vary from zero up to about 0.8, with higher correlations in the south, both for individual stations and for area-averaged rainfall. Regression provides some predictive capacity, but the `explanation' of the variation in rainfall is not particularly high. The contingency tables revealed that there were very few occasions of both high SOI and high seasonal rainfall, although there was a wide scatter of seasonal rainfall associated with a low SOI.It is concluded that the SOI would be useful for planners, governments, and agencies as one tool in food/famine early warning but that the relationships are not strong enough for the average farmer to place much reliance on forecasts produced solely using the SOI.

Formation of SIMOX-SOI structure by high-temperature oxygen implantation

NASA Astrophysics Data System (ADS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-12-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 1017-1018 ions/cm2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

Design and implementation of a low-power SOI CMOS receiver

NASA Astrophysics Data System (ADS)

Zencir, Ertan

There is a strong demand for wireless communications in civilian and military applications, and space explorations. This work attempts to implement a low-power, high-performance fully-integrated receiver for deep space communications using Silicon on Insulator (SOI) CMOS technology. Design and implementation of a UHF low-IF receiver front-end in a 0.35-mum SOI CMOS technology are presented. Problems and challenges in implementing a highly integrated receiver at UHF are identified. Low-IF architecture, suitable for low-power design, has been adopted to mitigate the noise at the baseband. Design issues of the receiver building blocks including single-ended and differential LNA's, passive and active mixers, and variable gain/bandwidth complex filters are discussed. The receiver is designed to have a variable conversion gain of more than 100 dB with a 70 dB image rejection and a power dissipation of 45 mW from a 2.5-V supply. Design and measured performance of the LNA's, and the mixer are presented. Measurement results of RF front-end blocks including a single-ended LNA, a differential LNA, and a double-balanced mixer demonstrate the low power realizability of RF front-end circuits in SOI CMOS technology. We also report on the design and simulation of the image-rejecting complex IF filter and the full receiver circuit. Gain, noise, and linearity performance of the receiver components prove the viability of fully integrated low-power receivers in SOI CMOS technology.

The 2000 Nemuro-Hanto-Oki earthquake, off eastern Hokkaido, Japan, and the high intraslab seismic activity in the southwestern Kuril Trench

USGS Publications Warehouse

Takahashi, H.; Hirata, K.

2003-01-01

The 2000 Nemuro-Hanto-Oki earthquake (Mw6.8) occurred in the southwestern part of the Kuril Trench. The hypocenter was located close to the aftershock region of the great 1994 Kuril earthquake (Mw8.3), named "the 1994 Hokkaido-Toho-Oki earthquake" by the Japan Meteorological Agency, for which the fault plane is still in debate. Analysis of the 2000 event provides a clue to resolve the fault plane issue for the 1994 event. The hypocenters of the 2000 main shock and aftershocks are determined using arrival times from a combination of nearby inland and submarine seismic networks with an improved azimuthal coverage. They clearly show that the 2000 event was an intraslab event occurring on a shallow-dipping fault plane between 55 and 65 km in depth. The well-focused aftershock distribution of the 2000 event, the relative location of the 1994 event with respect to the 2000 event, and the similarity between their focal mechanisms strongly suggest that the faulting of the great 1994 earthquake also occurred on a shallow-dipping fault plane in the subducting slab. The recent hypocenter distribution around the 1994 aftershock region also supports this result. Large intraslab earthquakes occuring to the southeast of Hokkaido may occur due to a strong coupling on the plate boundary, which generates relatively large stress field within the subducting Pacific plate.

Influence of ENSO events on the freshwater discharge pattern at Patos Lagoon, Rio Grande do Sul, Brazil

NASA Astrophysics Data System (ADS)

Barros, G. P.; Marques, W. C.

2013-05-01

The aim of this study is to investigate the influence and importance of ENSO events on the control of the freshwater discharge pattern at Patos Lagoon, in timescales longer than one year. For this study it was used freshwater discharge, water levels and South Oscillation Index (SOI) data sets. The Southern Oscillation Index, or SOI, gives an indication of the development and intensity of El Niño or La Niña events in the Pacific Ocean. Sustained negative values of the SOI greater than -8 often indicate El Niño episodes. Sustained positive values of the SOI greater than +8 are typical of a La Niña episode. Cross wavelet technique is applied to examine the coherence and phase between interannual time-series (South Oscillation Index, freshwater discharge and water levels). Over synoptic time scales, wind action is the most effective forcing in Patos Lagoon's circulation. However, at longer time scales (over one year), freshwater discharge becomes the most important forcing, controling the water levels, circulation and other processes. At longer time scales, South America is affected by ENSO's influence. El Niño is the South Oscillation phase where the trade winds are weak, the pressure is low over the eastern Tropical Pacific and high on the west side. The south region of Brazil shows precipitation anomalies associated with the ENSO occurrence. The most significant ENSO events show a high temporal variability, which may occur in near biannual scales (1.5 - 3 years) or in lower frequencies (3 years - 7 years). The freshwater discharge of the main tributaries and water levels in Patos Lagoon are influenced by ENSO on interannual scales (cycles between 3.8 and 6 years). Therefore, El Niño events are associated with high mean values of freshwater discharge and water levels above the mean. On the other hand, La Niña events are associated with low mean values of freshwater discharge and water levels below the mean. These results are consistent with analysis related to the SOI and agree with previously results obtained by other authors in this region of South America. The cross wavelet analysis between the freshwater discharge and the SOI time series indicates the dominant length and period of the ENSO cycles that control the discharge. It can be observed that between the years of 1950 and 1965 the dominant period was from 4 to 6 years, while from 1970 and 2000 the dominant period was lower than 4 years, indicating a change on the ENSO influence pattern on the region. Further studies about the characteristics of the catchment (area, length, topography, vegetation, etc.) would be very important to identify the delay between an ENSO event, the precipitation anomaly associated to it and the consequent increase of freshwater discharge, producing valuable information that could help in proper coastal management and flood prediction.

Validation of the All Patient Refined Diagnosis Related Group (APR-DRG) Risk of Mortality and Severity of Illness Modifiers as a Measure of Perioperative Risk.

PubMed

McCormick, Patrick J; Lin, Hung-Mo; Deiner, Stacie G; Levin, Matthew A

2018-03-22

The All Patient Refined Diagnosis Related Group (APR-DRG) is an inpatient visit classification system that assigns a diagnostic related group, a Risk of Mortality (ROM) subclass and a Severity of Illness (SOI) subclass. While extensively used for cost adjustment, no study has compared the APR-DRG subclass modifiers to the popular Charlson Comorbidity Index as a measure of comorbidity severity in models for perioperative in-hospital mortality. In this study we attempt to validate the use of these subclasses to predict mortality in a cohort of surgical patients. We analyzed all adult (age over 18 years) inpatient non-cardiac surgery at our institution between December 2005 and July 2013. After exclusions, we split the cohort into training and validation sets. We created prediction models of inpatient mortality using the Charlson Comorbidity Index, ROM only, SOI only, and ROM with SOI. Models were compared by receiver-operator characteristic (ROC) curve, area under the ROC curve (AUC), and Brier score. After exclusions, we analyzed 63,681 patient-visits. Overall in-hospital mortality was 1.3%. The median number of ICD-9-CM diagnosis codes was 6 (Q1-Q3 4-10). The median Charlson Comorbidity Index was 0 (Q1-Q3 0-2). When the model was applied to the validation set, the c-statistic for Charlson was 0.865, c-statistic for ROM was 0.975, and for ROM and SOI combined the c-statistic was 0.977. The scaled Brier score for Charlson was 0.044, Brier for ROM only was 0.230, and Brier for ROM and SOI was 0.257. The APR-DRG ROM or SOI subclasses are better predictors than the Charlson Comorbidity Index of in-hospital mortality among surgical patients.

Geographical distribution of the association between El Niño South Oscillation and dengue fever in the Americas: a continental analysis using geographical information system-based techniques.

PubMed

Ferreira, Marcos C

2014-11-01

El Niño South Oscillation (ENSO) is one climatic phenomenon related to the inter-annual variability of global meteorological patterns influencing sea surface temperature and rainfall variability. It influences human health indirectly through extreme temperature and moisture conditions that may accelerate the spread of some vector-borne viral diseases, like dengue fever (DF). This work examines the spatial distribution of association between ENSO and DF in the countries of the Americas during 1995-2004, which includes the 1997-1998 El Niño, one of the most important climatic events of 20(th) century. Data regarding the South Oscillation index (SOI), indicating El Niño-La Niña activity, were obtained from Australian Bureau of Meteorology. The annual DF incidence (AIy) by country was computed using Pan-American Health Association data. SOI and AIy values were standardised as deviations from the mean and plotted in bars-line graphics. The regression coefficient values between SOI and AIy (rSOI,AI) were calculated and spatially interpolated by an inverse distance weighted algorithm. The results indicate that among the five years registering high number of cases (1998, 2002, 2001, 2003 and 1997), four had El Niño activity. In the southern hemisphere, the annual spatial weighted mean centre of epidemics moved southward, from 6° 31' S in 1995 to 21° 12' S in 1999 and the rSOI,AI values were negative in Cuba, Belize, Guyana and Costa Rica, indicating a synchrony between higher DF incidence rates and a higher El Niño activity. The rSOI,AI map allows visualisation of a graded surface with higher values of ENSO-DF associations for Mexico, Central America, northern Caribbean islands and the extreme north-northwest of South America.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kodavasal, Janardhan; Kolodziej, Christopher P.; Ciatti, Stephen A.

Gasoline compression ignition (GCI) is a low temperature combustion (LTC) concept that has been gaining increasing interest over the recent years owing to its potential to achieve diesel-like thermal efficiencies with significantly reduced engine-out nitrogen oxides (NOx) and soot emissions compared to diesel engines. In this work, closed-cycle computational fluid dynamics (CFD) simulations are performed of this combustion mode using a sector mesh in an effort to understand effects of model settings on simulation results. One goal of this work is to provide recommendations for grid resolution, combustion model, chemical kinetic mechanism, and turbulence model to accurately capture experimental combustionmore » characteristics. Grid resolutions ranging from 0.7 mm to 0.1 mm minimum cell sizes were evaluated in conjunction with both Reynolds averaged Navier-Stokes (RANS) and Large Eddy Simulation (LES) based turbulence models. Solution of chemical kinetics using the multi-zone approach is evaluated against the detailed approach of solving chemistry in every cell. The relatively small primary reference fuel (PRF) mechanism (48 species) used in this study is also evaluated against a larger 312-species gasoline mechanism. Based on these studies the following model settings are chosen keeping in mind both accuracy and computation costs – 0.175 mm minimum cell size grid, RANS turbulence model, 48-species PRF mechanism, and multi-zone chemistry solution with bin limits of 5 K in temperature and 0.05 in equivalence ratio. With these settings, the performance of the CFD model is evaluated against experimental results corresponding to a low load start of injection (SOI) timing sweep. The model is then exercised to investigate the effect of SOI on combustion phasing with constant intake valve closing (IVC) conditions and fueling over a range of SOI timings to isolate the impact of SOI on charge preparation and ignition. Simulation results indicate that there is an optimum SOI timing, in this case -30?aTDC (after top dead center), which results in the most stable combustion. Advancing injection with respect to this point leads to significant fuel mass burning in the colder squish region, leading to retarded phasing and ultimately misfire for SOI timings earlier than -42?aTDC. On the other hand, retarding injection beyond this optimum timing results in reduced residence time available for gasoline ignition kinetics, and also leads to retarded phasing, with misfire at SOI timings later than -15?aTDC.« less

Cantilever-type Thermal Microactuators Fabricated by SOI-MUMPs with U-type and I-type Configurations

NASA Astrophysics Data System (ADS)

Osada, Takahiro; Ochiai, Kuniyuki; Osada, Kazuki; Muro, Hideo

Recently, the micro fluid systems have been extensively studied, where microactuators such as micro valves fabricated by MEMS technology are essential for realizing these systems. In this paper thermal microactuators with U-type and I-type shapes fabricated by SOI-MUMPs technology have been investigated for optimizing their configurations.

Nanogranular SiO2 proton gated silicon layer transistor mimicking biological synapses

NASA Astrophysics Data System (ADS)

Liu, M. J.; Huang, G. S.; Feng, P.; Guo, Q. L.; Shao, F.; Tian, Z. A.; Li, G. J.; Wan, Q.; Mei, Y. F.

2016-06-01

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO2 proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

2001-12-01

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

Development of the Stress of Immigration Survey: A Field Test Among Mexican Immigrant Women.

PubMed

Sternberg, Rosa Maria; Nápoles, Anna Maria; Gregorich, Steven; Paul, Steven; Lee, Kathryn A; Stewart, Anita L

2016-01-01

The Stress of Immigration Survey (SOIS) is a screening tool used to assess immigration-related stress. The mixed methods approach included concept development, pretesting, field testing, and psychometric evaluation in a sample of 131 low-income women of Mexican descent. The 21-item SOIS screens for stress related to language, immigrant status, work issues, yearning for family and home country, and cultural dissonance. Mean scores ranged from 3.6 to 4.4 (a scale of 1-5, higher is more stress). Cronbach α values were more than 0.80 for all subscales. The SOIS may be a useful screening tool for detecting high levels of immigration-related stress in low-income Mexican immigrant women.

Deep Trek High Temperature Electronics Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruce Ohme

2007-07-31

This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier.

Overview of surface ozone variability in East Asia-North Pacific region during IGAC/APARE (1994--1996).

PubMed

Lam, K S; Wang, T J; Wang, T; Tang, J; Kajii, Y; Liu, C M; Shim, S G

2004-01-01

Surface ozone (O3) was measured at Oki Island (Japan), Cheju Island (South Korea), Lanyu Island (Taiwan Province, China), Cape D'Aguilar (Hong Kong SAR) and Lin'an, Longfenshan, Waliguan (China mainland) during January 1994--December 1996 as a component of IGAC/APARE (International Global Atmospheric Chemistry/East Asia-North Pacific Regional Experiment). This paper gave a joint discussion on the observational results at these stations over the study region. Investigations showed that the average of surface O3 mixing ratios at the seven sites are 47.9+/-15.8, 48.1+/-17.9, 30.2+/-16.4, 31.6+/-17.5, 36.3+/-17.5, 34.8+/-11.5 and 48.2+/-9.5 ppbv, respectively. Significant diurnal variations of surface O3 have been observed at Oki, Cheju, D'Aguilar, Lin'an and Longfenshan. Their annual averaged diurnal differences range from 8 to 23 ppbv and differ in each season. Surface O3 at Lanyu and Waliguan do not show strong diurnal variability. Seasonal cycles of surface O3 showed difference at the temperate and the subtropical remote sites. Oki has a summer minimum-spring maximum, while Lanyu has a summer minimum-autumn maximum. The suburban sites at D'Aguilar and Lin'an report high-level O3 in autumn and low level O3 in summer. Surface O3 remains-high in autumn and low in winter at the rural site Longfenshan. For the global background station Waliguan, surface O3 exhibits a broad spring-summer maximum and autumn-winter minimum. The backward air trajectories to these sites have shown different pathways of long-range transport of air pollution from East Asia Continent to North Pacific Ocean. Surface O3 was found to be strongly and positively correlated with CO at Oki and Lanyu, especially in spring and autumn, reflecting the substantial photochemical buildup of O3 on a regional scale. It is believed that the regional sources of pollution in East Asia have enhanced the average surface O3 concentrations in the background atmosphere of North Pacific.

Kondo effect with tunable spin-orbit interaction in LaTiO3/CeTiO3/SrTiO3 heterostructure.

PubMed

Ghising, Pramod; Das, Debarchan; Das, Shubhankar; Hossain, Z

2018-07-18

We have fabricated epitaxial films of CeTiO 3 (CTO) on (0 0 1) oriented SrTiO 3 (STO) substrates, which exhibit highly insulating and diamagnetic properties. X-ray photoelectron spectroscopy was used to establish the 3+  valence state of the Ce and Ti ions. Furthermore, we have also fabricated δ (CTO) doped LaTiO 3 (LTO)/SrTiO 3 thin films which exhibit variety of interesting properties including Kondo effect and spin-orbit interaction (SOI) at low temperatures. The SOI shows a non-monotonic behaviour as the thickness of the CTO layer is increased and is reflected in the value of characteristic SOI field ([Formula: see text]) obtained from weak anti-localization fitting. The maximum value of [Formula: see text] is 1.00 T for δ layer thickness of 6 u.c. This non-monotonic behaviour of SOI is attributed to the strong screening of the confining potential at the interface. The screening effect is enhanced by the CTO layer thickness and the dielectric constant of STO which increases at low temperatures. Due to the strong screening, electrons confined at the interface are spread deeper into the STO bulk where it starts to populate the Ti [Formula: see text] subbands; consequently the Fermi level crosses over from [Formula: see text] to the [Formula: see text] subbands. At the crossover region of [Formula: see text] where there is orbital mixing, SOI goes through a maximum.

Mach-Zehnder Interferometer Biochemical Sensor Based on Silicon-on-Insulator Rib Waveguide with Large Cross Section

PubMed Central

Yuan, Dengpeng; Dong, Ying; Liu, Yujin; Li, Tianjian

2015-01-01

A high-sensitivity Mach-Zehnder interferometer (MZI) biochemical sensing platform based on Silicon-in-insulator (SOI) rib waveguide with large cross section is proposed in this paper. Based on the analyses of the evanescent field intensity, the mode polarization and cross section dimensions of the SOI rib waveguide are optimized through finite difference method (FDM) simulation. To realize high-resolution MZI read-out configuration based on the SOI rib waveguide, medium-filled trenches are employed and their performances are simulated through two-dimensional finite-difference-time domain (2D-FDTD) method. With the fundamental EH-polarized mode of the SOI rib waveguide with a total rib height of 10 μm, an outside rib height of 5 μm and a rib width of 2.5 μm at the operating wavelength of 1550 nm, when the length of the sensitive window in the MZI configuration is 10 mm, a homogeneous sensitivity of 7296.6%/refractive index unit (RIU) is obtained. Supposing the resolutions of the photoelectric detectors connected to the output ports are 0.2%, the MZI sensor can achieve a detection limit of 2.74 × 10−6 RIU. Due to high coupling efficiency of SOI rib waveguide with large cross section with standard single-mode glass optical fiber, the proposed MZI sensing platform can be conveniently integrated with optical fiber communication systems and (opto-) electronic systems, and therefore has the potential to realize remote sensing, in situ real-time detecting, and possible applications in the internet of things. PMID:26343678

L'Apprentissage et le Changement des Attitudes envers Soi-meme: Le Concept de Soi. (Learning and the Change of Attitudes Towards Oneself: Self Image).

ERIC Educational Resources Information Center

Leduc, Aimee

1980-01-01

The French language article is the second in a series and describes the principles of classic conditioning which underlie attitude formation and change. The article also notes the many functions of self-concept attitudes in order to guide the choices of intervention in attitude learning. (Author/SB)

A National Partnership-Based Summer Learning Initiative to Engage Underrepresented Students with Science, Technology, Engineering and Mathematics

NASA Technical Reports Server (NTRS)

Melvin, Leland

2010-01-01

In response to the White House Educate to Innovate campaign, NASA developed a new science, technology, engineering, and mathematics (STEM) education program for non-traditional audiences that also focused on public-private partnerships and nationwide participation. NASA recognized that summer break is an often overlooked but opportune time to engage youth in STEM experiences, and elevated its ongoing commitment to the cultivation of diversity. The Summer of Innovation (SoI) is the resulting initiative that uses NASA's unique missions and resources to boost summer learning, particularly for students who are underrepresented, underserved and underperforming in STEM. The SoI pilot, launched in June 2010, is a multi-faceted effort designed to improve STEM teaching and learning through partnership, multi-week summer learning programs, special events, a national concluding event, and teacher development. The SoI pilot features strategic infusion of NASA content and educational resource materials, sustainability through STEM Learning Communities, and assessments of effectiveness of SoI interventions with other pilot efforts. This paper examines the inception and development of the Summer of Innovation pilot project, including achievements and effectiveness, as well as lessons learned for future efforts.

Electron mobility in the inversion layers of fully depleted SOI films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru; Naumova, O. V.; Fomin, B. I.

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished.more » The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.« less

Stopping electric field extension in a modified nanostructure based on SOI technology - A comprehensive numerical study

NASA Astrophysics Data System (ADS)

Anvarifard, Mohammad K.; Orouji, Ali A.

2017-11-01

This article has related a particular knowledge in order to reduce short channel effects (SCEs) in nano-devices based on silicon-on-insulator (SOI) MOSFETs. The device under study has been designed in 22 nm node technology with embedding Si3N4 extra oxide as a stopping layer of electric field and a useful heatsink for transferring generated heat. Two important subjects (DC characteristics and RF characteristics) have been investigated, simultaneously. Stopping electric field extension and enhancement of channel thermal conduction are introduced as an entrance gateway for this work so that improve the electrical characteristics, eventually. The inserted extra oxide made by the Si3N4 material has a vital impact on the modification of the electrical and thermal features in the proposed device. An immense comparison between the proposed SOI and conventional SOI showed that the proposed structure has higher electrical and thermal proficiency than the conventional structure in terms of main parameters such as short channel effects (SCEs), leakage current, floating body effect (FBE), self-heating effect (SHE), voltage gain, ratio of On-current to Off- current, transconductance, output conductance, minimum noise figure and power gain.

Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

NASA Astrophysics Data System (ADS)

Zheng, Qiwen; Cui, Jiangwei; Liu, Mengxin; Zhou, Hang; Liu, Mohan; Wei, Ying; Su, Dandan; Ma, Teng; Lu, Wu; Yu, Xuefeng; Guo, Qi; He, Chengfa

2017-07-01

Effect of total ionizing dose (TID) on single-event upset (SEU) hardness of 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) is investigated in this paper. The measurable synergistic effect of TID on SEU sensitivity of 130-nm PD SOI SRAM was observed in our experiment, even though that is far less than micrometer and submicrometer devices. Moreover, SEU cross section after TID irradiation has no dependence on the data pattern that was applied during TID exposure: SEU cross sections are characterized by TID data pattern and its complement data pattern are decreased consistently rather than a preferred state and a nonpreferred state as micrometer and sub-micrometer SRAMs. The memory cell test structure allowing direct measurement of static noise margin (SNM) under standby operation was designed using identical memory cell layout of SRAM. Direct measurement of the memory cell SNM shows that both data sides' SNM is decreased by TID, indicating that SEU cross section of 130-nm PD SOI SRAM will be increased by TID. And, the decreased SNM is caused by threshold shift in memory cell transistors induced by “radiation-induced narrow channel effect”.

An SEU resistant 256K SOI SRAM

NASA Astrophysics Data System (ADS)

Hite, L. R.; Lu, H.; Houston, T. W.; Hurta, D. S.; Bailey, W. E.

1992-12-01

A novel SEU (single event upset) resistant SRAM (static random access memory) cell has been implemented in a 256K SOI (silicon on insulator) SRAM that has attractive performance characteristics over the military temperature range of -55 to +125 C. These include worst-case access time of 40 ns with an active power of only 150 mW at 25 MHz, and a worst-case minimum WRITE pulse width of 20 ns. Measured SEU performance gives an Adams 10 percent worst-case error rate of 3.4 x 10 exp -11 errors/bit-day using the CRUP code with a conservative first-upset LET threshold. Modeling does show that higher bipolar gain than that measured on a sample from the SRAM lot would produce a lower error rate. Measurements show the worst-case supply voltage for SEU to be 5.5 V. Analysis has shown this to be primarily caused by the drain voltage dependence of the beta of the SOI parasitic bipolar transistor. Based on this, SEU experiments with SOI devices should include measurements as a function of supply voltage, rather than the traditional 4.5 V, to determine the worst-case condition.

Neurofeedback in ADHD and insomnia: vigilance stabilization through sleep spindles and circadian networks.

PubMed

Arns, Martijn; Kenemans, J Leon

2014-07-01

In this review article an overview of the history and current status of neurofeedback for the treatment of ADHD and insomnia is provided. Recent insights suggest a central role of circadian phase delay, resulting in sleep onset insomnia (SOI) in a sub-group of ADHD patients. Chronobiological treatments, such as melatonin and early morning bright light, affect the suprachiasmatic nucleus. This nucleus has been shown to project to the noradrenergic locus coeruleus (LC) thereby explaining the vigilance stabilizing effects of such treatments in ADHD. It is hypothesized that both Sensori-Motor Rhythm (SMR) and Slow-Cortical Potential (SCP) neurofeedback impact on the sleep spindle circuitry resulting in increased sleep spindle density, normalization of SOI and thereby affect the noradrenergic LC, resulting in vigilance stabilization. After SOI is normalized, improvements on ADHD symptoms will occur with a delayed onset of effect. Therefore, clinical trials investigating new treatments in ADHD should include assessments at follow-up as their primary endpoint rather than assessments at outtake. Furthermore, an implication requiring further study is that neurofeedback could be stopped when SOI is normalized, which might result in fewer sessions. Copyright © 2012 Elsevier Ltd. All rights reserved.

Local variation of inundation, sedimentary characteristics, and mineral assemblages of the 2011 Tohoku-oki tsunami on the Misawa coast, Aomori, Japan

NASA Astrophysics Data System (ADS)

Nakamura, Yugo; Nishimura, Yuichi; Putra, Purna Sulastya

2012-12-01

The 2011 Tohoku-oki tsunami caused severe damage to the coastal regions of eastern Japan and left a sediment veneer over affected areas. We discuss differences in depositional characteristics of the 2011 Tohoku-oki tsunami from the viewpoint of the sediment source, coastal topography and flow height. The study area on the Misawa coast, northern Tohoku, includes a 20 km long coastline with sandy beaches, coastal dunes and a gently sloping lowland. This landscape assemblage provides an opportunity to examine the effects of topography on the characteristics of the tsunami deposit. During field surveys conducted from April 10 to May 2, 2011, we described the thickness, facies, and structure of the tsunami deposit. We also collected sand samples at approximately 20 m intervals along 13 shore-perpendicular transects extending up to 550 m inland, for grain size and mineral assemblage analysis. The tsunami flow height was estimated by measuring the elevation of debris found in trees, broken tree limbs, or water marks on buildings. The nature of the coastal lowland affected the flow height and inundation distance. In the southern part of the study area, where there is a narrow, 100 m wide low-lying coastal strip, the run-up height reached 10 m on the landward terrace slopes. To the north, the maximum inundation reached 550 m with a run-up height of 3.2 m on the wider, low-lying coastal topography. The average flow height was 4-5 m. The tsunami eroded coastal dunes and formed small scarps along the coast. Immediately landward of the coastal dunes the tsunami deposit was more than 20 cm thick, but thinned markedly inland from this point. Close to the dunes the deposit was composed largely of medium sand (1-2 Φ) with planar and parallel bedding, but with no apparent upward fining or coarsening. The grain size was similar to that of the coastal dune and we infer that the dunes were the local source material for the tsunami deposit at this point. The mineral assemblage of the tsunami deposit was dominated by orthopyroxene and clinopyroxene and was also similar to the dune and beach sand. At sites more than half the inundation distance inland, the thinner tsunami deposit consisted mainly of fine sand (2.375 Φ) with some upward fining. The difference in grain size and sedimentary characteristics was probably caused by differences in sediment transportation and depositional processes. We infer that the well-sorted, finer sediments were deposited out of suspension, whereas the relatively coarse sands were laid down from traction flows. The depositional characteristics of the 2011 Tohoku-oki tsunami deposit appeared to have been affected mainly by the coastal topography and the extent of erosion at any one point, as opposed to flow height.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

PubMed

Pan, Huapu; Assefa, Solomon; Green, William M J; Kuchta, Daniel M; Schow, Clint L; Rylyakov, Alexander V; Lee, Benjamin G; Baks, Christian W; Shank, Steven M; Vlasov, Yurii A

2012-07-30

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.

SU-8 microcantilever with an aperture, fluidic channel, and sensing mechanisms for biological and other applications.

PubMed

Gaitas, Angelo; Hower, Robert W

2014-09-15

We describe a method for fabricating an aperture on a fluidic cantilever device using SU-8 as a structural material. The device can ultimately be used for patch clamping, microinjections, fluidic delivery, fluidic deposition, and micromaterial removal. In the first generation of this device, the initial aperture diameter is 10 μ m and is fabricated on a silicon-on-insulator (SOI) wafer that is structurally used to define the aperture. The aperture can be reduced in size through mask design. This self-aligned process allows for patterning on the sharp tip projecting out of the fluidic plane on the cantilever and is batch fabricated, reducing the cost and time for manufacture. The initial mask, SOI device layer thickness, and the width of the base of the tip define the size of the aperture. The SU-8 micromachined cantilever includes an electrode and a force sensing mechanism. The cantilever can be easily integrated with an atomic force microscope or an optical microscope.

Applications of the silicon wafer direct-bonding technique to electron devices

NASA Astrophysics Data System (ADS)

Furukawa, K.; Nakagawa, A.

1990-01-01

A silicon wafer direct-bonding (SDB) technique has been developed. A pair of bare silicon wafers, as well as an oxidized wafer pair, are bonded throughout the wafer surfaces without any bonding material. Conventional semiconductor device processes can be used for the bonded wafers, since the bonded interface is stable thermally, chemically, mechanically and electrically. Therefore, the SDB technique is very attractive, and has been applied to several kinds of electron devices. Bare silicon to bare silicon bonding is an alternative for epitaxial growth. A thick, high quality and high resistivity layer on a low resistivity substrate was obtained without autodoping. 1800 V insulated gate bipolar transistors were developed using these SDB wafers. No electrical resistance was observed at the bonded bare silicon interfaces. If oxidized wafers are bonded, the two wafers are electrically isolated, providing silicon on insulator (SOI) wafers. Dielectrically isolated photodiode arrays were fabricated on the SOI wafers and 500 V power IC's are now being developed.

A dual-reflective electrothermal MEMS micromirror for full circumferential scanning endoscopic imaging

NASA Astrophysics Data System (ADS)

Wu, Lei; Xie, Huikai

2008-02-01

This paper reports the design, fabrication and measurements of a dual-reflective, single-crystal silicon based micromirror that can perform full circumferential scanning (FCS) for endoscopic optical coherence tomography (EOCT). In the proposed FCS-EOCT probe, two optical fibers are used to deliver light beams to either surface of the micromirror, which can rotate +/-45° (or 90°) and thus a 180° optical scanning is obtained from each mirror surface, resulting in full circumferential scans. A novel surface- and bulk-combined micromachining process based on SOI wafers is developed for fabricating the dual reflective micromirror. The single-crystal-silicon device layer of SOI wafers is used for mirror flatness, and Al is coated on both sides for high reflectivity. With one light beam delivered to each mirror surface, full 360° scans have been observed. Other measured data include the resonant frequency: 328Hz, radius of curvatures: - 124 mm (front surface) and 127 mm (back surface), and the reflectances: 81.3% (front surface) and 79.0% (back surface).

Lasing in silicon–organic hybrid waveguides

PubMed Central

Korn, Dietmar; Lauermann, Matthias; Koeber, Sebastian; Appel, Patrick; Alloatti, Luca; Palmer, Robert; Dumon, Pieter; Freude, Wolfgang; Leuthold, Juerg; Koos, Christian

2016-01-01

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry. PMID:26949229

Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

A novel SOI LDMOS with substrate field plate and variable-k dielectric buried layer

NASA Astrophysics Data System (ADS)

Li, Qi; Wen, Yi; Zhang, Fabi; Li, Haiou; Xiao, Gongli; Chen, Yonghe; Fu, Tao

2018-09-01

A novel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) structure has been proposed. The new structure features a substrate field plate (SFP) and a variable-k dielectric buried layer (VKBL). The SFP and VKBL improve the breakdown voltage by introducing new electric field peaks in the surface electric field distribution. Moreover, the SFP reduces the specific ON-resistance through an enhanced auxiliary depletion effect on the drift region. The simulation results indicate that compared to the conventional SOI LDMOS structure, the breakdown voltage is improved from 118 V to 221 V, the specific ON-resistance is decreased from 7.15 mΩ·cm2 to 3.81 mΩ·cm2, the peak value of surface temperature is declined by 38 K.

Joint Far-field and Near-field GPS Observations to Modified the Fault Slip Models of 2011 Tohoku-Oki Earthquake (Mw 9.0)

NASA Astrophysics Data System (ADS)

Yang, J.; Yi, S.; Sun, W.

2016-12-01

Signification displacements caused by the 2011 Tohoku-Oki earthquake (Mw9.0) can be detected by GPS observations on the north and northeast of Asian continent which comes from Crustal Movement Observation Network of China (CMONOC). Obviously horizontal displacement which can be detected with many GPS stations reaches to almost 3cm and 2cm and most of those extend eastward pointing to the epicenter of this earthquake. Those data can be acquired rapidly after the earthquake from CMONOC. Here, we will discuss how to calculate the seismic moment with those far-field GPS observations. The far field displacement can constrain the pattern of finite slip model and seismic moment using spherically stratified Earth model (PREM). We give a general rule of thumb to show how far-field GPS observations are affected by the earthquake parameters. In the worldwide, after 1990 there are 27 large earthquakes (the magnitude more than Mw 8.0) which most are subduction types with low rake angle. Their far-field GPS observations are mainly controlled by the component of Y22. Far-field GPS observations are potential to constrain one or two components of the focal mechanisms. When we joint far-field and near-field GPS data to get the 2011 Tohoku-Oki earthquake, we can get a more accurately finite slip model. The article shows a new mothed using far-field GPS data to constrain the fault slip model.

Low-frequency source parameters of twelve large earthquakes. M.S. Thesis

NASA Technical Reports Server (NTRS)

Harabaglia, Paolo

1993-01-01

A global survey of the low-frequency (1-21 mHz) source characteristics of large events are studied. We are particularly interested in events unusually enriched in low-frequency and in events with a short-term precursor. We model the source time function of 12 large earthquakes using teleseismic data at low frequency. For each event we retrieve the source amplitude spectrum in the frequency range between 1 and 21 mHz with the Silver and Jordan method and the phase-shift spectrum in the frequency range between 1 and 11 mHz with the Riedesel and Jordan method. We then model the source time function by fitting the two spectra. Two of these events, the 1980 Irpinia, Italy, and the 1983 Akita-Oki, Japan, are shallow-depth complex events that took place on multiple faults. In both cases the source time function has a length of about 100 seconds. By comparison Westaway and Jackson find 45 seconds for the Irpinia event and Houston and Kanamori about 50 seconds for the Akita-Oki earthquake. The three deep events and four of the seven intermediate-depth events are fast rupturing earthquakes. A single pulse is sufficient to model the source spectra in the frequency range of our interest. Two other intermediate-depth events have slower rupturing processes, characterized by a continuous energy release lasting for about 40 seconds. The last event is the intermediate-depth 1983 Peru-Ecuador earthquake. It was first recognized as a precursive event by Jordan. We model it with a smooth rupturing process starting about 2 minutes before the high frequency origin time superimposed to an impulsive source.

Simulations for Making On-farm Decisions in Relation to ENSO in Semi-arid Areas, South Africa

NASA Astrophysics Data System (ADS)

Tesfuhuney, W. A.; Crespo, O. O.; Walker, S. S.; Steyn, S. A.

2017-12-01

The study was employed to investigate and improve on-farm decision making on planting dates and fertilization by relating simulated yield and seasonal outlook information. The Agricultural Production Systems SIMulator model (APSIM) was used to explore ENSO/SOI effects for small-scale farmers to represent weather conditions and soil forms of semi-arid areas of Bothaville, Bethlehem and Bloemfontein regions in South Africa. The relationships of rainfall and SOI anomalies indicate a positive correlation, signifies ENSO/SOI as seasonal outlooks for study areas. Model evaluation results showed higher degree of bias (RMSEs/RMSE value of 0.88-0.98). The D-index of agreement in the range 0.61-0.71 indicate the ability of the APSIM-Maize model is an adequate tool in evaluating relative changes in maize yield in relation to various management practices and seasonal variations. During rainy, La Niño years (SOI > +5), highest simulated yields were found for Bethlehem in November with addition of 100 - 150 kg ha-1 N fertilization and up to 50 kg ha-1 for both Bothaville and Bloemfontein. With respect to various levels of fertilization, the dry El Niño years (SOI < -5) had a range of 0.90-1.31, 3.03-3.54 and 1.11-1.26 t ha-1 yields and showed to increase during La Niña years with a range of 2.50-2.66, 3.36-4.79 and 2.24-2.38 t ha-1 at Bothaville, Bethlehem and Bloemfontein for November planting. During El Niño episodes planting earlier and using 50 kg ha-1 fertilizer with improved short maturing cultivar are effective adaptation measures to counteract poor soils and erratic rainfall of semi-arid environment, Under optimal soil conditions and/or when probability of La Niño episodes, optimal yields are obtained by maximizing fertilization. Effective rainfall and tactical on-farm management decisions in associate with seasonal rainfall out looks information is a useful mechanism in reducing risk for dryland farming in semi-arid regions. Key word: Semi-arid; APSIM; SOI; El Niño / La Niña; On-farm Decisions

Interannual variations in wheat rust development in China and the United States in relation to the El Nino/Southern oscillation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scherm, H.; Yang, X.B.

The El Nino/Southern Oscillation (ENSO) is one of the most important and best-characterized mechanisms of global climatic variation. Because regional temperature and precipitation patterns are influenced by the ENSO and plant diseases are responsive to these factors, historical disease records may contain an ENSO-related signal. We used cross-spectral analysis to establish coherence and phase relationships between the Southern Oscillation Index (SOI), which is a measure of the ENSO, and long-term (>40 years) data on wheat stripe rust in five regions of northern China and wheat stem rust in four climatic divisions of the midwestern United States. Monthly SOI values weremore » averaged from March to June and October to March for analysis of the rust data from China and the United States, respectively, based when weather patterns in these regions are influenced by the ENSO. The coherence relationships showed consistent and significant (0.01 {le} P {le} 0.10) cooscillations between the rust and SOI series at temporal scales characteristic of the ENSO. The five stripe rust series were coherent with the SOI series at periodicities of 2.0 to 3.0 and 8.0 to 10.0 years, and three of the four stem rust series were coherent with the SOI series at a periodicity of 6.8 to 8.2 years. The phase relationships showed that, in most cases, the rust and SOI series cooscillated out of phase, suggesting that the associations between them are indirect. In a separate analysis of a shorter (18 years) stripe rust series form the Pacific Northwest of the United States, disease severity was significantly lower during El Nino years (warm phases of the ENSO) than during non-El Nino years (P {le} 0.0222) or during La Nina years (cold phases of the ENSO) (P {le}0.0253). Although no cause-and-effect relationships could be deduced, this analysis identified methods and directions for future research into relationships between climate and disease at extended temporal scales. 34 refs., 5 figs., 1 tab.« less

Advanced CMOS Radiation Effects Testing and Analysis

NASA Technical Reports Server (NTRS)

Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.;

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

NASA Astrophysics Data System (ADS)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Non-stationary influence of El Niño-Southern Oscillation and winter temperature on oak latewood growth in NW Iberian Peninsula.

PubMed

Rozas, Vicente; García-González, Ignacio

2012-09-01

The properties of El Niño-Southern Oscillation (ENSO), such as period, amplitude, and teleconnection strength to extratropical regions, have changed since the mid-1970s. ENSO affects the regional climatic regime in SW Europe, thus tree performance in the Iberian Peninsula could be affected by recent ENSO dynamics. We established four Quercus robur chronologies of earlywood and latewood widths in the NW Iberian Peninsula. The relationship between tree growth and the Southern Oscillation Index (SOI), the atmospheric expression of ENSO, showed that only latewood growth was correlated negatively with the SOI of the previous summer-autumn-winter. This relationship was non-stationary, with significant correlations only during the period 1952-1980; and also non-linear, with enhanced latewood growth only in La Niña years, i.e. years with a negative SOI index for the previous autumn. Non-linear relationship between latewood and SOI indicates an asymmetric influence of ENSO on tree performance, biassed towards negative SOI phases. During La Niña years, climate in the study area was warmer and wetter than during positive years, but only for 1952-1980. Winter temperatures became the most limiting factor for latewood growth since 1980, when mean regional temperatures increased by 1°C in comparison to previous periods. As a result, higher winter respiration rates, and the extension of the growing season, would probably cause an additional consumption of stored carbohydrates. The influence of ENSO and winter temperatures proved to be of great importance for tree growth, even at lower altitudes and under mild Atlantic climate in the NW Iberian Peninsula.

Dynamic Regimes of El Niño Southern Oscillation and Influenza Pandemic Timing

PubMed Central

Oluwole, Olusegun Steven Ayodele

2017-01-01

El Niño southern oscillation (ENSO) dynamics has been shown to drive seasonal influenza dynamics. Severe seasonal influenza epidemics and the 2009–2010 pandemic were coincident with chaotic regime of ENSO dynamics. ENSO dynamics from 1876 to 2016 were characterized to determine if influenza pandemics are coupled to chaotic regimes. Time-varying spectra of southern oscillation index (SOI) and sea surface temperature (SST) were compared. SOI and SST were decomposed to components using the algorithm of noise-assisted multivariate empirical mode decomposition. The components were Hilbert transformed to generate instantaneous amplitudes and phases. The trajectories and attractors of components were characterized in polar coordinates and state space. Influenza pandemics were mapped to dynamic regimes of SOI and SST joint recurrence of annual components. State space geometry of El Niños lagged by influenza pandemics were characterized and compared with other El Niños. Timescales of SOI and SST components ranged from sub-annual to multidecadal. The trajectories of SOI and SST components and the joint recurrence of annual components were dissipative toward chaotic attractors. Periodic, quasi-periodic, and chaotic regimes were present in the recurrence of trajectories, but chaos–chaos transitions dominated. Influenza pandemics occurred during chaotic regimes of significantly low transitivity dimension (p < 0.0001). El Niños lagged by influenza pandemics had distinct state space geometry (p < 0.0001). Chaotic dynamics explains the aperiodic timing, and varying duration and strength of El Niños. Coupling of all influenza pandemics of the past 140 years to chaotic regimes of low transitivity indicate that ENSO dynamics drives influenza pandemic dynamics. Forecasts models from ENSO dynamics should compliment surveillance for novel influenza viruses. PMID:29218303

Trauma center variation in the management of pediatric patients with blunt abdominal solid organ injury: a national trauma data bank analysis.

PubMed

Safavi, Arash; Skarsgard, Erik D; Rhee, Peter; Zangbar, Bardiya; Kulvatunyou, Narong; Tang, Andrew; O'Keeffe, Terence; Friese, Randall S; Joseph, Bellal

2016-03-01

Nonoperative management of hemodynamically stable children with Solid Organ Injury (SOI) has become standard of care. The aim of this study is to identify differences in management of children with SOI treated at Adult Trauma Centers (ATC) versus Pediatric Trauma Centers (PTC). We hypothesized that patients treated at ATC would undergo more procedures than PTC. Patients younger than 18 years old with isolated SOI (spleen, liver, kidney) who were treated at level I-II ATC or PTC were identified from the 2011-2012 National Trauma Data Bank. The primary outcome measure was the incidence of operative management. Data was analyzed using multivariate logistic regression analysis. Procedures were defined as surgery or transarterial embolization (TAE). 6799 children with SOI (spleen: 2375, liver: 2867, kidney: 1557) were included. Spleen surgery was performed more frequently at ATC than PTC {101 (7.7%) vs. 52 (4.9%); P=0.007}. After adjusting for potential confounders (grade of injury, age, gender and injury severity score), admission at ATC was associated with higher odds of splenic surgery (OR: 1.5, 95% CI: 1.02-2.25; p=0.03). 11 and 8 children underwent kidney and liver operations respectively. TAE was performed in 17 patients with splenic, 34 with liver and 14 with kidney trauma. There was no practice variation between ATC and PTC regarding kidney and liver operations or TAE incidence. Operative management for SOI was more often performed at ATC. The presence of significant disparity in the management of children with splenic injuries justifies efforts to use these surgeries as a reported national quality indicator for trauma programs. Published by Elsevier Inc.

Influence of southern oscillation on autumn rainfall in Iran (1951-2011)

NASA Astrophysics Data System (ADS)

Roghani, Rabbaneh; Soltani, Saeid; Bashari, Hossein

2016-04-01

This study aimed to investigate the relationships between southern oscillation and autumn (October-December) rainfall in Iran. It also sought to identify the possible physical mechanisms involved in the mentioned relationships by analyzing observational atmospheric data. Analyses were based on monthly rainfall data from 50 synoptic stations with at least 35 years of records up to the end of 2011. Autumn rainfall time series were grouped by the average Southern Oscillation Index (SOI) and SOI phase methods. Significant differences between rainfall groups in each method were assessed by Kruskal-Wallis and Kolmogorov-Smirnov non-parametric tests. Their relationships were also validated using the linear error in probability space (LEPS) test. The results showed that average SOI and SOI phases during July-September were related with autumn rainfall in some regions located in the west and northwest of Iran, west coasts of the Caspian Sea and southern Alborz Mountains. The El Niño (negative) and La Niña (positive) phases were associated with increased and decreased autumn rainfall, respectively. Our findings also demonstrated the persistence of Southern Pacific Ocean's pressure signals on autumn rainfall in Iran. Geopotential height patterns were totally different in the selected El Niño and La Niña years over Iran. During the El Niño years, a cyclone was formed over the north of Iran and an anticyclone existed over the Mediterranean Sea. During La Niña years, the cyclone shifted towards the Mediterranean Sea and an anticyclone developed over Iran. While these El Niño conditions increased autumn rainfall in Iran, the opposite conditions during the La Niña phase decreased rainfall in the country. In conclusion, development of rainfall prediction models based on the SOI can facilitate agricultural and water resources management in Iran.

Appendix A, Plan Projects as amended for Financial Constraint

DOT National Transportation Integrated Search

1995-04-13

The Ohio-Kentucky-Indiana Regional Council of Governments (OKI) provides : coordinated regional transportation planning for an eight county area. This : document contains tables showing, by county, statistical data on road project : projections for o...

Performance comparison AN/FRD-10 versus PUSHER

NASA Astrophysics Data System (ADS)

Vincent, Wilbur R.; Adler, Richard W.

1995-02-01

The possibility of replacing some of the AN/FRD-10 Circular Disposed Antenna Array (CDAA) facilities with lower cost PUSHER type of CDAA is an option available to planners. It is generally assumed that the ability of the PUSHER to receive signals of interest (SOI) is only slightly less than that of the larger AN/FRD-10 and AN/FLR-9 types of CDAA. However, no specific analysis of the actual difference in performance is known to exist. This report provides a preliminary performance analysis of the two types of facilities. Detailed performance-related measurements have been made at a number of AN/FRD-10 CDAA sites. These measurements were made as a part of the U.S. Navy's Signal-to-Noise-Enhancement Program (SNEP). The objective of the SNEP is to identify and mitigate all factors that degrade the ability of receiving sites to receive SOI and process data from them. Similar measurements have also been made at PUSHER sites, although complete data is available from only a single PUSHER site. This report uses data accumulated from the AN/FRD-10 sites and from one measured PUSHER site to examine the differences in their ability to receive SOI. The performance Evaluation Technique (PET) developed by the Naval Postgraduate School was used to evaluate the performance of each kind of CDAA. To simplify this initial analysis, the assumption was made that an AN/FRD-10 site containing an RFSS type of RF switch would be replaced with a PUSHER. Only the technical properties of the two types of CDAA were considered.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

NASA Astrophysics Data System (ADS)

Jaud, Marie-Anne; Barraud, Sylvain; Saint-Martin, Jérôme; Bournel, Arnaud; Dollfus, Philippe; Jaouen, Hervé

2008-12-01

A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.

The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, John D.; Patel, Jagdish; Liu, S. T.; Reed, Robert A.; Mojarradi, Mohammad M.; Blalock, Benjamin J.

2003-06-01

We evaluate the usefulness of partially depleted SOI CMOS devices fabricated in a 0.35 μm technology on UNIBOND material for electronics applications requiring robust operation under extreme environment conditions consisting of low and/or high temperature, and under substantial radiation exposure. The threshold voltage, effective mobility, and the impact ionization parameters were determined across temperature for both the nFETs and the pFETs. The radiation response was characterized using threshold voltage shifts of both the front-gate and back-gate transistors. These results suggest that this 0.35 μm partially depleted SOI CMOS technology is suitable for operation across a wide range of extreme environment conditions consisting of: cryogenic temperatures down to 86 K, elevated temperatures up to 573 K, and under radiation exposure to 1.3 Mrad(Si) total dose.

CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device

NASA Astrophysics Data System (ADS)

Uryu, Yuko; Asano, Tanemasa

2002-04-01

A new photodetector device composed of a lateral junction photodiode and a metal-oxide-semiconductor field-effect-transistor (MOSFET), in which the output of the diode is fed through the body of the MOSFET, has been investigated. It is shown that the silicon-on-insulator (SOI)-MOSFET amplifies the junction photodiode current due to the lateral bipolar action. It is also shown that the presence of the electrically floating gate enhances the current amplification factor of the SOI-MOSFET. The output current of this composite device linearly responds by four orders of illumination intensity. As an application of the composite device, a complementary-metal-oxide-semiconductor (CMOS) line sensor incorporating the composite device is fabricated and its operation is demonstrated. The output signal of the line sensor using the composite device was two times larger than that using the lateral photodiode.

Approaches of multilayer overlay process control for 28nm FD-SOI derivative applications

NASA Astrophysics Data System (ADS)

Duclaux, Benjamin; De Caunes, Jean; Perrier, Robin; Gatefait, Maxime; Le Gratiet, Bertrand; Chapon, Jean-Damien; Monget, Cédric

2018-03-01

Derivative technology like embedded Non-Volatile Memories (eNVM) is raising new types of challenges on the "more than Moore" path. By its construction: overlay is critical across multiple layers, by its running mode: usage of high voltage are stressing leakages and breakdown, and finally with its targeted market: Automotive, Industry automation, secure transactions… which are all requesting high device reliability (typically below 1ppm level). As a consequence, overlay specifications are tights, not only between one layer and its reference, but also among the critical layers sharing the same reference. This work describes a broad picture of the key points for multilayer overlay process control in the case of a 28nm FD-SOI technology and its derivative flows. First, the alignment trees of the different flow options have been optimized using a realistic process assumptions calculation for indirect overlay. Then, in the case of a complex alignment tree involving heterogeneous scanner toolset, criticality of tool matching between reference layer and critical layers of the flow has been highlighted. Improving the APC control loops of these multilayer dependencies has been studied with simulations of feed-forward as well as implementing new rework algorithm based on multi-measures. Finally, the management of these measurement steps raises some issues for inline support and using calculations or "virtual overlay" could help to gain some tool capability. A first step towards multilayer overlay process control has been taken.

Evaluation of an Empirical Traction Equation for Forestry Tires

Treesearch

C.R. Vechinski; C.E. Johnson; R.L. Raper

1998-01-01

Variable load test data were used to evaluate the applicability of an existing forestry tire traction model for a new forestry tire and a worn tire of the same size with and without tire chains in a range of soil conditions. `The clay and sandy soi!s ranged in moisture content from 17 to 28%. Soil bulk density varied between 1.1 and 1.4g cm-3...

Solid State Research.

DTIC Science & Technology

1984-08-15

for the Same Signal 30 3 -1 Schematic Diagrams of Two Configurations with SOI/ CMOS and Bipolar Devices Fabricated on the Same Si Wafer. The Bipolar...Waveform of 39-Stage SOI/ CMOS Ring Oscillator for 5-V Supply Voltage. The Propagation Delay per Stage is 藨 ps 33 3 -4 Common-Emitter I-V...multiple beam splitters and delay lines. 3 . MATERIALS RESEARCH Two merged CMOS ! bipolar technologies utilizing S01 films have been developed for

Irregular Forces in Counterinsurgency Operations: Their Roles and Considerations

DTIC Science & Technology

2010-05-10

highways channelized traffic between the larger population centers. Iraq’s oil reserves, conservatively estimated at 350 billion barrels , were the...laws, the easy availability of weapons made this matter hard to enforce. CF provided concrete barriers and other material to reinforce traffic control...sniper rifles, and handguns . To reduce GOI concerns of SOI rebellion, CF required all SOIs to obey Iraqi laws to include curfews when not on duty

Magnetic adatoms in two and four terminal graphene nanoribbons: A comparison between their spin polarized transport

NASA Astrophysics Data System (ADS)

Ganguly, Sudin; Basu, Saurabh

2018-04-01

We study the charge and spin transport in two and four terminal graphene nanoribbons (GNR) decorated with random distribution of magnetic adatoms. The inclusion of the magnetic adatoms generates only the z-component of the spin polarized conductance via an exchange bias in the absence of Rashba spin-orbit interaction (SOI), while in presence of Rashba SOI, one is able to create all the three (x, y and z) components. This has important consequences for possible spintronic applications. The charge conductance shows interesting behaviour near the zero of the Fermi energy. Where in presence of magnetic adatoms the familiar plateau at 2e2 / h vanishes, thereby transforming a quantum spin Hall insulating phase to an ordinary insulator. The local charge current and the local spin current provide an intuitive idea on the conductance features of the system. We found that, the local charge current is independent of Rashba SOI, while the three components of the local spin currents are sensitive to Rashba SOI. Moreover the fluctuations of the spin polarized conductance are found to be useful quantities as they show specific trends, that is, they enhance with increasing adatom densities. A two terminal GNR device seems to be better suited for possible spintronic applications.

A Temperature Sensor using a Silicon-on-Insulator (SOI) Timer for Very Wide Temperature Measurement

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Elbuluk, Malik; Culley, Dennis E.

2008-01-01

A temperature sensor based on a commercial-off-the-shelf (COTS) Silicon-on-Insulator (SOI) Timer was designed for extreme temperature applications. The sensor can operate under a wide temperature range from hot jet engine compartments to cryogenic space exploration missions. For example, in Jet Engine Distributed Control Architecture, the sensor must be able to operate at temperatures exceeding 150 C. For space missions, extremely low cryogenic temperatures need to be measured. The output of the sensor, which consisted of a stream of digitized pulses whose period was proportional to the sensed temperature, can be interfaced with a controller or a computer. The data acquisition system would then give a direct readout of the temperature through the use of a look-up table, a built-in algorithm, or a mathematical model. Because of the wide range of temperature measurement and because the sensor is made of carefully selected COTS parts, this work is directly applicable to the NASA Fundamental Aeronautics/Subsonic Fixed Wing Program--Jet Engine Distributed Engine Control Task and to the NASA Electronic Parts and Packaging (NEPP) Program. In the past, a temperature sensor was designed and built using an SOI operational amplifier, and a report was issued. This work used an SOI 555 timer as its core and is completely new work.

Statistical analysis of the El Niño-Southern Oscillation and sea-floor seismicity in the eastern tropical Pacific.

PubMed

Guillas, Serge; Day, Simon J; McGuire, B

2010-05-28

We present statistical evidence for a temporal link between variations in the El Niño-Southern Oscillation (ENSO) and the occurrence of earthquakes on the East Pacific Rise (EPR). We adopt a zero-inflated Poisson regression model to represent the relationship between the number of earthquakes in the Easter microplate on the EPR and ENSO (expressed using the southern oscillation index (SOI) for east Pacific sea-level pressure anomalies) from February 1973 to February 2009. We also examine the relationship between the numbers of earthquakes and sea levels, as retrieved by Topex/Poseidon from October 1992 to July 2002. We observe a significant (95% confidence level) positive influence of SOI on seismicity: positive SOI values trigger more earthquakes over the following 2 to 6 months than negative SOI values. There is a significant negative influence of absolute sea levels on seismicity (at 6 months lag). We propose that increased seismicity is associated with ENSO-driven sea-surface gradients (rising from east to west) in the equatorial Pacific, leading to a reduction in ocean-bottom pressure over the EPR by a few kilopascal. This relationship is opposite to reservoir-triggered seismicity and suggests that EPR fault activity may be triggered by plate flexure associated with the reduced pressure.

Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer

NASA Astrophysics Data System (ADS)

Qiao, Ming; Wang, Yuru; Li, Yanfei; Zhang, Bo; Li, Zhaoji

2014-11-01

A novel 1200-V ultra-thin partial silicon-on-insulator (PSOI) lateral double-diffusion metal oxide semiconductor (LDMOS) with n-type buried (n-buried) layer (NBL PSOI LDMOS) is proposed in this paper. The new PSOI LDMOS features an n-buried layer underneath the n-type drift (n-drift) region close to the source side, providing a large conduction region for majority carriers and a silicon window to improve self-heating effect (SHE). A combination of uniform and linear variable doping (ULVD) profile is utilized in the n-drift region, which alleviates the inherent tradeoff between specific on-resistance (Ron,sp) and breakdown voltage (BV). With the n-drift region length of 80 μm, the NBL PSOI LDMOS obtains a high BV of 1243 V which is improved by around 105 V in comparison to the conventional SOI LDMOS with linear variable doping (LVD) profile for the n-drift region (LVD SOI LDMOS). Besides, the 1200-V NBL PSOI LDMOS has a lower maximum temperature (Tmax) of 333 K at a power (P) of 1 mW/μm which is reduced by around 61 K. Meanwhile, Ron,sp and Tmax of the NBL PSOI LDMOS are lower than those of the conventional LVD SOI LDMOS for a wide range of BV.

Subject order-independent group ICA (SOI-GICA) for functional MRI data analysis.

PubMed

Zhang, Han; Zuo, Xi-Nian; Ma, Shuang-Ye; Zang, Yu-Feng; Milham, Michael P; Zhu, Chao-Zhe

2010-07-15

Independent component analysis (ICA) is a data-driven approach to study functional magnetic resonance imaging (fMRI) data. Particularly, for group analysis on multiple subjects, temporally concatenation group ICA (TC-GICA) is intensively used. However, due to the usually limited computational capability, data reduction with principal component analysis (PCA: a standard preprocessing step of ICA decomposition) is difficult to achieve for a large dataset. To overcome this, TC-GICA employs multiple-stage PCA data reduction. Such multiple-stage PCA data reduction, however, leads to variable outputs due to different subject concatenation orders. Consequently, the ICA algorithm uses the variable multiple-stage PCA outputs and generates variable decompositions. In this study, a rigorous theoretical analysis was conducted to prove the existence of such variability. Simulated and real fMRI experiments were used to demonstrate the subject-order-induced variability of TC-GICA results using multiple PCA data reductions. To solve this problem, we propose a new subject order-independent group ICA (SOI-GICA). Both simulated and real fMRI data experiments demonstrated the high robustness and accuracy of the SOI-GICA results compared to those of traditional TC-GICA. Accordingly, we recommend SOI-GICA for group ICA-based fMRI studies, especially those with large data sets. Copyright 2010 Elsevier Inc. All rights reserved.

Recent damaging earthquakes in Japan, 2003-2008

USGS Publications Warehouse

Kayen, Robert E

2008-01-01

During the last six years, from 2003-2008, Japan has been struck by three significant and damaging earthquakes: The most recent M6.6 Niigata Chuetsu Oki earthquake of July 16, 2007 off the coast of Kashiwazaki City, Japan; The M6.6 Niigata Chuetsu earthquake of October 23, 2004, located in Niigata Prefecture in the central Uonuma Hills; and the M8.0 Tokachi Oki Earthquake of September 26, 2003 effecting southeastern Hokkaido Prefecture. These earthquakes stand out among many in a very active period of seismicity in Japan. Within the upper 100 km of the crust during this period, Japan experienced 472 earthquakes of magnitude 6, or greater. Both Niigata events affected the south-central region of Tohoku Japan, and the Tokachi-Oki earthquake affected a broad region of the continental shelf and slope southeast of the Island of Hokkaido. This report is synthesized from the work of scores of Japanese and US researchers who led and participated in post-earthquake reconnaissance of these earthquakes: their noteworthy and valuable contributions are listed in an extended acknowledgements section at the end of the paper. During the Niigata Chuetsu Oki event of 2007, damage to the Kashiwazaki-Kariwa nuclear power plant, structures, infrastructure, and ground were primarily the product of two factors: (1) high intensity motions from this moderate-sized shallow event, and (2) soft, poor performing, or liquefiable soils in the coastal region of southwestern Niigata Prefecture. Structural and geotechnical damage along the slopes of dunes was ubiquitous in the Kashiwazaki-Kariwa region. The 2004 Niigata Chuetsu Earthquake was the most significant to affect Japan since the 1995 Kobe earthquake. Forty people were killed, almost 3,000 were injured, and many hundreds of landslides destroyed entire upland villages. Landslides were of all types; some dammed streams, temporarily creating lakes threatening to overtop their new embankments and cause flash floods and mudslides. The numerous landslides resulted, in part, from heavy rain associated with Typhoon Tokage. The earthquake forced more than 100,000 people into temporary shelters, and as many as 10,000 displaced from their upland homes for several years. Total damages was estimated by Japanese authorities at US$40 billion, making this the second most costly disaster in history, after the 1995 Kobe earth-quake. The 2003 Tokachi-Oki earthquake was the third event of magnitude 8.0+ to strike the southeastern portion of Hokkaido in the last 50 years. The event produced tsunami run-ups along the shoreline of southern Hokkaido that reached maximum heights of 4 meters. Accelerations recorded by seismic networks of Hokkaido indicated a high intensity motion region from Hiroo area to Kushiro City, with a PGA values in the range of 0.35 to 0.6g. Despite high acceleration levels, the observed ground failure, liquefaction, structural, port, and lifeline damages were remarkably light.

Mega-earthquakes rupture flat megathrusts.

PubMed

Bletery, Quentin; Thomas, Amanda M; Rempel, Alan W; Karlstrom, Leif; Sladen, Anthony; De Barros, Louis

2016-11-25

The 2004 Sumatra-Andaman and 2011 Tohoku-Oki earthquakes highlighted gaps in our understanding of mega-earthquake rupture processes and the factors controlling their global distribution: A fast convergence rate and young buoyant lithosphere are not required to produce mega-earthquakes. We calculated the curvature along the major subduction zones of the world, showing that mega-earthquakes preferentially rupture flat (low-curvature) interfaces. A simplified analytic model demonstrates that heterogeneity in shear strength increases with curvature. Shear strength on flat megathrusts is more homogeneous, and hence more likely to be exceeded simultaneously over large areas, than on highly curved faults. Copyright © 2016, American Association for the Advancement of Science.

OKI evaluation of intelligent transportation system

DOT National Transportation Integrated Search

2000-06-01

The Advanced Regional Traffic Interactive Management & Information System (ARTIMIS) is one of the earliest ITS systems deployed in the US with preliminary studies being initiated in the late 1980s and early 1990s. ARTIMIS provides traffic management ...

Prompt gravity signal induced by the 2011 Tohoku-Oki earthquake

PubMed Central

Montagner, Jean-Paul; Juhel, Kévin; Barsuglia, Matteo; Ampuero, Jean Paul; Chassande-Mottin, Eric; Harms, Jan; Whiting, Bernard; Bernard, Pascal; Clévédé, Eric; Lognonné, Philippe

2016-01-01

Transient gravity changes are expected to occur at all distances during an earthquake rupture, even before the arrival of seismic waves. Here we report on the search of such a prompt gravity signal in data recorded by a superconducting gravimeter and broadband seismometers during the 2011 Mw 9.0 Tohoku-Oki earthquake. During the earthquake rupture, a signal exceeding the background noise is observed with a statistical significance higher than 99% and an amplitude of a fraction of μGal, consistent in sign and order of magnitude with theoretical predictions from a first-order model. While prompt gravity signal detection with state-of-the-art gravimeters and seismometers is challenged by background seismic noise, its robust detection with gravity gradiometers under development could open new directions in earthquake seismology, and overcome fundamental limitations of current earthquake early-warning systems imposed by the propagation speed of seismic waves. PMID:27874858

Prompt gravity signal induced by the 2011 Tohoku-Oki earthquake.

PubMed

Montagner, Jean-Paul; Juhel, Kévin; Barsuglia, Matteo; Ampuero, Jean Paul; Chassande-Mottin, Eric; Harms, Jan; Whiting, Bernard; Bernard, Pascal; Clévédé, Eric; Lognonné, Philippe

2016-11-22

Transient gravity changes are expected to occur at all distances during an earthquake rupture, even before the arrival of seismic waves. Here we report on the search of such a prompt gravity signal in data recorded by a superconducting gravimeter and broadband seismometers during the 2011 Mw 9.0 Tohoku-Oki earthquake. During the earthquake rupture, a signal exceeding the background noise is observed with a statistical significance higher than 99% and an amplitude of a fraction of μGal, consistent in sign and order of magnitude with theoretical predictions from a first-order model. While prompt gravity signal detection with state-of-the-art gravimeters and seismometers is challenged by background seismic noise, its robust detection with gravity gradiometers under development could open new directions in earthquake seismology, and overcome fundamental limitations of current earthquake early-warning systems imposed by the propagation speed of seismic waves.

Prompt gravity anomaly induced to the 2011Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Montagner, Jean-Paul; Juhel, Kevin; Barsuglia, Matteo; Ampuero, Jean-Paul; Harms, Jan; Chassande-Mottin, Eric; Whiting, Bernard; Bernard, Pascal; Clévédé, Eric; Lognonné, Philippe

2017-04-01

Transient gravity changes are expected to occur at all distances during an earthquake rupture, even before the arrival of seismic waves. Here we report on the search of such a prompt gravity signal in data recorded by a superconducting gravimeter and broadband seismometers during the 2011 Mw 9.0 Tohoku-Oki earthquake. During the earthquake rupture, a signal exceeding the background noise is observed with a statistical significance higher than 99% and an amplitude of a fraction of μGal, consistent in sign and order-of-magnitude with theoretical predictions from a first-order model. While prompt gravity signal detection with state-of-the-art gravimeters and seismometers is challenged by background seismic noise, its robust detection with gravity gradiometers under development could open new directions in earthquake seismology, and overcome fundamental limitations of current earthquake early-warning systems (EEWS) imposed by the propagation speed of seismic waves.

A process to control light in a micro resonator through a coupling modulation by surface acoustic waves

NASA Astrophysics Data System (ADS)

Fan, Guofang; Li, Yuan; Hu, Chunguang; Lei, Lihua; Guo, Yanchuan

2016-08-01

A novel process to control light through the coupling modulation by surface acoustic wave (SAW) is presented in an optical micro resonator. An optical waveguide modulator of a racetrack resonator on silicon-on-insulator (SOI) technology is took as an example to explore the mechanism. A finite-difference time-domain (FDTD) is developed to simulate the acousto-optical (AO) modulator using the mechanism. An analytical method is presented to verify our proposal. The results show that the process can work well as an optical modulator by SAW.

CMUT Fabrication Based On A Thick Buried Oxide Layer.

PubMed

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O; Khuri-Yakub, Butrus T

2010-10-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required - in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate.

CMUT Fabrication Based On A Thick Buried Oxide Layer

PubMed Central

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O.; Khuri-Yakub, Butrus T.

2010-01-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required – in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate. PMID:22685377

Geologic Evidence of Tsunamigenic Earthquakes from the Southern Part of the Japan Trench

NASA Astrophysics Data System (ADS)

Pilarczyk, J.; Sawai, Y.; Namegaya, Y.; Tamura, T.; Tanigawa, K.; Matsumoto, D.; Shinozaki, T.; Fujiwara, O.; Shishikura, M.; Shimada, Y.; Dura, T.; Horton, B.

2017-12-01

The northern and southern parts of the Japan Trench have generated earthquakes with moment magnitudes up to 8.0. Similarly, the middle part of the Japan Trench has historically generated tsunamigenic-earthquakes up to M 7.0. However, in 2011, the Tohoku-oki (M 9.0) event ruptured 500 km along the middle part of the Japan Trench and generated the largest known tsunami to have originated from this part of the subduction zone. Seismic models indicate that the Tohoku-oki earthquake may have transferred stress southwards down the fault to the potentially locked southern part of the Japan Trench. It is unknown if this transfer of stress could produce an earthquake and tsunami that would impact the metropolitan areas of east-central Japan in the near future that may be comparable in magnitude to the Tohoku-oki event. Here, we reconstruct the history of individual great earthquakes and accompanying tsunamis using geological records from the coastal zone adjacent to the southern part of the Japan Trench, providing an assessment of the seismic hazard for metropolitan areas in east-central Japan. In the Kujukuri strand plain, we found three anomalous marine sand layers intercalated within muddy peat, which can be traced 3.8 km inland and 50 km along the present Kujukuri coastline. Each sand layer has features consistent with tsunami deposits, such as a distinct erosional base, rip-up clasts, normal grading, and a mud drape. Preliminary radiocarbon dating suggests three tsunamis inundated the Kujukuri coastline over the last millennium.

Interpretation of Offshore Crustal Movements Following the 2011 Tohoku-Oki Earthquake by the Combined Effect of Afterslip and Viscoelastic Stress Relaxation

NASA Astrophysics Data System (ADS)

Noda, Akemi; Takahama, Tsutomu; Kawasato, Takeshi; Matsu'ura, Mitsuhiro

2018-02-01

On the 11th March 2011, a megathrust event, called the Tohoku-oki earthquake, occurred at the North American-Pacific plate interface off northeast Japan. Transient crustal movements following this earthquake were clearly observed by a dense GPS network (GEONET) on land and a sparse GPS/Acoustic positioning network on seafloor. The observed crustal movements are in accordance with ordinary expectations on land, but not on seafloor; that is, slowly decaying landward movements above the main rupture area and rapidly decaying trench-ward movements in its southern extension. To reveal the cause of such curious offshore crustal movements, we analyzed the coseismic and postseismic GPS array data on land with a sequential stepwise inversion method considering viscoelastic stress relaxation in the asthenosphere, and obtained the following results: The afterslip of the Tohoku-oki earthquake rapidly proceeds for the first 1 year on a high-angle downdip extension of the main rupture, which occurred on the low-angle offshore plate interface. The theoretical patterns of seafloor horizontal movements due to the afterslip and the viscoelastic relaxation of coseismic stress changes in the asthenosphere are essentially different both in space and time; inshore trench-ward movements and offshore landward movements for the afterslip, while overall landward movements for the viscoelastic stress relaxation. General agreement between the computed horizontal movements and the GPS/Acoustic observations demonstrates that the postseismic curious offshore crustal movements can be ascribed to the combined effect of afterslip on a high-angle downdip extension of the main rupture and viscoelastic stress relaxation in the asthenosphere.

Analysis of seismicity in the region off the southeastern Korean Peninsula after the 2011 M9.0 Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Lee, J.; Kim, T. K.; Kim, W.; Hong, T. K.

2017-12-01

The Korean Peninsula is located in a stable intraplate regime with relatively low seismicity. The seismicity in the Korean Peninsula was, however, changed significantly after the 11 March 2011 M9.0 Tohoku-Oki megathrust earthquake. An M5.0 earthquake occurred in 2016 at the region off the southeastern Korean Peninsula. The M5.0 earthquake was the largest event in the region since 1978 when the national seismic monitoring began. Several nuclear power plants are placed near the region. It is requested to understand the seismo-tectonic structures of the region, which may be crucial for mitigation of seismic hazards. Analysis of seismicity may be useful for illumination of fault structures. We investigate the focal mechanism solutions, ambient stress field, and spatial distribution of earthquakes. It is intriguing to note that the number of earthquakes increased since the 2011 Tohoku-Oki earthquake. We refined the hypocenters of 52 events using a velocity-searching hypocentral inversion method (VELHYPO). We determined the focal mechanism solutions of 25 events using a P polarity analysis and long period waveform inversion. The ambient stress field was inferred from the focal mechanism solutions. Strike-slip events occurred dominantly although the paleo-tectonic structures suggest the presence of thrust faults in the region. We observe that the compressional stress field is applied in ENE-WSW, which may be a combination of lateral compressions from the Pacific and Philippine Sea plates. The active strike-slip events and compressional stress field suggest reactivation of paleo-tectonic structures.

Japanese earthquake predictability experiment with multiple runs before and after the 2011 Tohoku-oki earthquake

NASA Astrophysics Data System (ADS)

Hirata, N.; Tsuruoka, H.; Yokoi, S.

2011-12-01

The current Japanese national earthquake prediction program emphasizes the importance of modeling as well as monitoring for a sound scientific development of earthquake prediction research. One major focus of the current program is to move toward creating testable earthquake forecast models. For this purpose, in 2009 we joined the Collaboratory for the Study of Earthquake Predictability (CSEP) and installed, through an international collaboration, the CSEP Testing Centre, an infrastructure to encourage researchers to develop testable models for Japan. We started Japanese earthquake predictability experiment on November 1, 2009. The experiment consists of 12 categories, with 4 testing classes with different time spans (1 day, 3 months, 1 year and 3 years) and 3 testing regions called 'All Japan,' 'Mainland,' and 'Kanto.' A total of 160 models, as of August 2013, were submitted, and are currently under the CSEP official suite of tests for evaluating the performance of forecasts. We will present results of prospective forecast and testing for periods before and after the 2011 Tohoku-oki earthquake. Because a seismic activity has changed dramatically since the 2011 event, performances of models have been affected very much. In addition, as there is the problem of authorized catalogue related to the completeness magnitude, most models did not pass the CSEP consistency tests. Also, we will discuss the retrospective earthquake forecast experiments for aftershocks of the 2011 Tohoku-oki earthquake. Our aim is to describe what has turned out to be the first occasion for setting up a research environment for rigorous earthquake forecasting in Japan.

Japanese earthquake predictability experiment with multiple runs before and after the 2011 Tohoku-oki earthquake

NASA Astrophysics Data System (ADS)

Hirata, N.; Tsuruoka, H.; Yokoi, S.

2013-12-01

The current Japanese national earthquake prediction program emphasizes the importance of modeling as well as monitoring for a sound scientific development of earthquake prediction research. One major focus of the current program is to move toward creating testable earthquake forecast models. For this purpose, in 2009 we joined the Collaboratory for the Study of Earthquake Predictability (CSEP) and installed, through an international collaboration, the CSEP Testing Centre, an infrastructure to encourage researchers to develop testable models for Japan. We started Japanese earthquake predictability experiment on November 1, 2009. The experiment consists of 12 categories, with 4 testing classes with different time spans (1 day, 3 months, 1 year and 3 years) and 3 testing regions called 'All Japan,' 'Mainland,' and 'Kanto.' A total of 160 models, as of August 2013, were submitted, and are currently under the CSEP official suite of tests for evaluating the performance of forecasts. We will present results of prospective forecast and testing for periods before and after the 2011 Tohoku-oki earthquake. Because a seismic activity has changed dramatically since the 2011 event, performances of models have been affected very much. In addition, as there is the problem of authorized catalogue related to the completeness magnitude, most models did not pass the CSEP consistency tests. Also, we will discuss the retrospective earthquake forecast experiments for aftershocks of the 2011 Tohoku-oki earthquake. Our aim is to describe what has turned out to be the first occasion for setting up a research environment for rigorous earthquake forecasting in Japan.

Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, R. L.; Damewood, L.; Zeng, Y. J.

To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI so the half-metallicity persists.more » As a result, based on the mechanical stability and the negligible SOI, we identified two half-metals, β-LiCrAs and β-LiMnSi, as promising half-Heusler alloys worth growing.« less

Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr2IrO4

NASA Astrophysics Data System (ADS)

Cao, G.; Terzic, J.; Zhao, H. D.; Zheng, H.; De Long, L. E.; Riseborough, Peter S.

2018-01-01

Electrical control of structural and physical properties is a long-sought, but elusive goal of contemporary science and technology. We demonstrate that a combination of strong spin-orbit interactions (SOI) and a canted antiferromagnetic Mott state is sufficient to attain that goal. The antiferromagnetic insulator Sr2IrO4 provides a model system in which strong SOI lock canted Ir magnetic moments to IrO6 octahedra, causing them to rigidly rotate together. A novel coupling between an applied electrical current and the canting angle reduces the Néel temperature and drives a large, nonlinear lattice expansion that closely tracks the magnetization, increases the electron mobility, and precipitates a unique resistive switching effect. Our observations open new avenues for understanding fundamental physics driven by strong SOI in condensed matter, and provide a new paradigm for functional materials and devices.

Solid-state semiconductor optical cryocooler based on CdS nanobelts.

PubMed

Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

2014-08-13

We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

Optimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor

PubMed Central

TalebiFard, Sahba; Schmidt, Shon; Shi, Wei; Wu, WenXuan; Jaeger, Nicolas A. F.; Kwok, Ezra; Ratner, Daniel M.; Chrostowski, Lukas

2017-01-01

Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU. PMID:28270963

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging.

PubMed

Xie, Bo; Xing, Yonghao; Wang, Yanshuang; Chen, Jian; Chen, Deyong; Wang, Junbo

2015-09-21

This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

PubMed Central

Xie, Bo; Xing, Yonghao; Wang, Yanshuang; Chen, Jian; Chen, Deyong; Wang, Junbo

2015-01-01

This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%. PMID:26402679

Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate

NASA Astrophysics Data System (ADS)

Hermann, P.; Hecker, M.; Renn, F.; Rölke, M.; Kolanek, K.; Rinderknecht, J.; Eng, L. M.

2011-06-01

Local stress fields in strained silicon structures important for CMOS technology are essentially related to size effects and properties of involved materials. In the present investigation, Raman spectroscopy was utilized to analyze the stress distribution within strained silicon (sSi) and silicon-germanium (SiGe) island structures. As a result of the structuring of initially unpatterned strained films, a size-dependent relaxation of the intrinsic film stresses was obtained in agreement with model calculations. This changed stress state in the features also results in the appearance of opposing stresses in the substrate underneath the islands. Even for strained island structures on top of silicon-on-insulator (SOI) wafers, corresponding stresses in the silicon substrate underneath the oxide were detected. Within structures, the stress relaxation is more pronounced for islands on SOI substrates as compared to those on bulk silicon substrates.

Dislocation-free strained silicon-on-silicon by in-place bonding

NASA Astrophysics Data System (ADS)

Cohen, G. M.; Mooney, P. M.; Paruchuri, V. K.; Hovel, H. J.

2005-06-01

In-place bonding is a technique where silicon-on-insulator (SOI) slabs are bonded by hydrophobic attraction to the underlying silicon substrate when the buried oxide is undercut in dilute HF. The bonding between the exposed surfaces of the SOI slab and the substrate propagates simultaneously with the buried oxide etching. As a result, the slabs maintain their registration and are referred to as "bonded in-place". We report the fabrication of dislocation-free strained silicon slabs from pseudomorphic trilayer Si/SiGe/SOI by in-place bonding. Removal of the buried oxide allows the compressively strained SiGe film to relax elastically and induce tensile strain in the top and bottom silicon films. The slabs remain bonded to the substrate by van der Waals forces when the wafer is dried. Subsequent annealing forms a covalent bond such that when the upper Si and the SiGe layer are removed, the bonded silicon slab remains strained.

Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect

DOE PAGES

Zhang, R. L.; Damewood, L.; Zeng, Y. J.; ...

2017-07-07

To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI so the half-metallicity persists.more » As a result, based on the mechanical stability and the negligible SOI, we identified two half-metals, β-LiCrAs and β-LiMnSi, as promising half-Heusler alloys worth growing.« less

Postseismic Deformation: Different mechanisms in different times and places.

NASA Astrophysics Data System (ADS)

Segall, P.

2004-12-01

Improved understanding of postseismic deformation may elucidate time dependent stress transfer and triggered seismicity following large earthquakes. Afterslip, distributed viscoelastic flow, and poroelastic relaxation alter crustal stress and pore pressure distributions and in many cases lead to distinctive surface deformation patterns. Delayed triggering, due to rate and state dependent friction, on the other hand need not lead to detectable surface deformation. Postseismic deformation recorded following the 1999 ChiChi, Taiwan, 2003 Tokachi-Oki, Japan, and 2000 south Iceland earthquakes can be used to test for the effects of these processes. Horizontal displacements of 10 cm accumulated in the first year following the Chi-Chi quake. These are best explained with continued slip on the Chelungpu fault (Hsu et al, G.R.L. 2002). Inversions indicate the afterslip was roughly localized in a ring around the locus of maximum coseismic slip. The observed displacement pattern is inconsistent with predictions from viscoelastic and poroelastic models. Viscoelastic relaxation of the lower crust produces shortening of the hanging wall instead of the observed extension. The fully drained poroelastic response predicts deformation concentrated near the fault ends, which was not observed. Fully time dependent calculations, however, are still required because poroelastic displacements need not be monotonic. Afterslip following the M 8 Tokachi Oki earthquake is also localized around the area of high mainshock slip (Miyazaki et al, GRL, 2004). Surprisingly, the slip is not located downdip of the mainshock, but along strike of the source region. This indicates that the transient deformation is not caused by deceleration of the earthquake instability, but rather by stress increases due to the mainshock. A major question is whether intermediate depth afterslip following the Tokachi Oki and ChiChi earthquakes occurs in stable (steady state velocity strengthening) areas which will never initiate fast earthquake slip, or on unstable (velocity weakening) parts of the fault that slipped in a stable fashion following the earthquakes due to the pre-earthquake fault state and stress. Resolution of this question has important implications for future earthquakes in these areas. Postseismic deformation in the month following the South Iceland earthquakes was clearly detected by InSAR. The spatial and temporal patterns are inconsistent with both afterslip and viscoelastic deformation. The InSAR data are, however, well explained by a rapid poroelastic response. This was confirmed by water level changes with the same spatial and temporal scales as the deformation (Jónsson et al, Nature, 2003). The decay of aftershocks is substantially longer that the poroelastic relaxation, suggesting that poroelastic effects do not control the timing of triggered earthquakes. The InsAR data, however, are insensitive to pore pressure changes at the depths of most aftershocks. At longer time scales, other processes dominate the observed deformation (Arnadottir, this meeting). An inescapable conclusion of these studies is that different physical processes dominate postseismic deformation in different geologic environments at different time scales.

A Systematic Transport and Thermodynamic Study of Heavy Transition Metal Oxides with Hexagonal Structure

NASA Astrophysics Data System (ADS)

Butrouna, Kamal

There is no apparent, dominant interaction in heavy transition metal oxides (TMO), especially in 5d-TMO, where all relevant interactions are of comparable energy scales, and therefore strongly compete. In particular, the spin-orbit interaction (SOI) strongly competes with the electron-lattice and on-site Coulomb interaction (U). Therefore, any tool that allows one to tune the relative strengths of SOI and U is expected to offer an opportunity for the discovery and study of novel materials. BaIrO3 is a magnetic insulator driven by SOI, whereas the isostructural BaRuO3 is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of SOI in the iridate. This dissertation thoroughly examines a wide array of newly observed novel phenomena induced by adjusting the relative strengths of SOI and U via a systematic chemical substitution of the Ru4+(4d 4) ions for Ir4+(5d5) ions in BaIrO3, i.e., in high quality single crystals of BaIr1--x RuxO3(0.0 ≤ x ≤ 1.0). Our investigation of structural, magnetic, transport and thermal properties reveals that Ru substitution directly rebalances the competing energies so profoundly that it generates a rich phase diagram for BaIr 1--xRuxO 3 featuring two major effects: (1) Light Ru doping (0 ≤ x ≤ 0.15) prompts a simultaneous and precipitous drop in both the magnetic ordering temperature TC and the electrical resistivity, which exhibits metal-insulator transition at around TC. (2) Heavier Ru doping (0.41 ≤ x ≤ 0.82) induces a robust metallic and spin frustration state. For comparison and contrast, we also substituted Rh4+(4d 5) ions for Ir4+(5d5) ions in BaIrO3, i.e. in BaIr1--xRhxO 3(0.0 ≤ x ≤ 0.1), where Rh only reduces the SOI, but without altering the band filling. Hence, this system remains tuned at the Mott instability and is very susceptible to disorder scattering which gives rise to Anderson localization. KEYWORDS: spin-orbit interaction, heavy transition metal oxides, barium iridate, metal-insulator transition, magnetic order.

Hospital financing of ischaemic stroke: determinants of funding and usefulness of DRG subcategories based on severity of illness.

PubMed

Dewilde, Sarah; Annemans, Lieven; Pincé, Hilde; Thijs, Vincent

2018-05-11

Several Western and Arab countries, as well as over 30 States in the US are using the "All-Patient Refined Diagnosis-Related Groups" (APR-DRGs) with four severity-of-illness (SOI) subcategories as a model for hospital funding. The aim of this study is to verify whether this is an adequate model for funding stroke hospital admissions, and to explore which risk factors and complications may influence the amount of funding. A bottom-up analysis of 2496 ischaemic stroke admissions in Belgium compares detailed in-hospital resource use (including length of stay, imaging, lab tests, visits and drugs) per SOI category and calculates total hospitalisation costs. A second analysis examines the relationship between the type and location of the index stroke, medical risk factors, patient characteristics, comorbidities and in-hospital complications on the one hand, and the funding level received by the hospital on the other hand. This dataset included 2513 hospitalisations reporting on 35,195 secondary diagnosis codes, all medically coded with the International Classification of Disease (ICD-9). Total costs per admission increased by SOI (€3710-€16,735), with severe patients costing proportionally more in bed days (86%), and milder patients costing more in medical imaging (24%). In all resource categories (bed days, medications, visits and imaging and laboratory tests), the absolute utilisation rate was higher among severe patients, but also showed more variability. SOI 1-2 was associated with vague, non-specific stroke-related ICD-9 codes as primary diagnosis (71-81% of hospitalisations). 24% hospitalisations had, in addition to the primary diagnosis, other stroke-related codes as secondary diagnoses. Presence of lung infections, intracranial bleeding, severe kidney disease, and do-not-resuscitate status were each associated with extreme SOI (p < 0.0001). APR-DRG with SOI subclassification is a useful funding model as it clusters stroke patients in homogenous groups in terms of resource use. The data on medical care utilisation can be used with unit costs from other countries with similar healthcare set-ups to 1) assess stroke-related hospital funding versus actual costs; 2) inform economic models on stroke prevention and treatment. The data on diagnosis codes can be used to 3) understand which factors influence hospital funding; 4) raise awareness about medical coding practices.

Contrasting effects of climatic variability on the demography of a trans-equatorial migratory seabird.

PubMed

Genovart, Meritxell; Sanz-Aguilar, Ana; Fernández-Chacón, Albert; Igual, Jose M; Pradel, Roger; Forero, Manuela G; Oro, Daniel

2013-01-01

Large-scale seasonal climatic indices, such as the North Atlantic Oscillation (NAO) index or the Southern Oscillation Index (SOI), account for major variations in weather and climate around the world and may influence population dynamics in many organisms. However, assessing the extent of climate impacts on species and their life-history traits requires reliable quantitative statistical approaches. We used a new analytical tool in mark-recapture, the multi-event modelling, to simultaneously assess the influence of climatic variation on multiple demographic parameters (i.e. adult survival, transient probability, reproductive skipping and nest dispersal) at two Mediterranean colonies of the Cory's shearwater Calonectris diomedea, a trans-equatorial migratory long-lived seabird. We also analysed the impact of climate in the breeding success at the two colonies. We found a clear temporal variation of survival for Cory's shearwaters, strongly associated to the large-scale SOI especially in one of the colonies (up to 66% of variance explained). Atlantic hurricane season is modulated by the SOI and coincides with shearwater migration to their wintering areas, directly affecting survival probabilities. However, the SOI was a better predictor of survival probabilities than the frequency of hurricanes; thus, we cannot discard an indirect additive effect of SOI via food availability. Accordingly, the proportion of transients was also correlated with SOI values, indicating higher costs of first reproduction (resulting in either mortality or permanent dispersal) when bad environmental conditions occurred during winter before reproduction. Breeding success was also affected by climatic factors, the NAO explaining c. 41% of variance, probably as a result of its effect in the timing of peak abundance of squid and small pelagics, the main prey for shearwaters. No climatic effect was found either on reproductive skipping or on nest dispersal. Contrarily to what we expect for a long-lived organism, large-scale climatic indexes had a more pronounced effect on survival and transient probabilities than on less sensitive fitness parameters such reproductive skipping or nest dispersal probabilities. The potential increase in hurricane frequency because of global warming may interact with other global change agents (such as incidental bycatch and predation by alien species) nowadays impacting shearwaters, affecting future viability of populations. © 2012 The Authors. Journal of Animal Ecology © 2012 British Ecological Society.

A Library of Rad Hard Mixed-Voltage/Mixed-Signal Building Blocks for Integration of Avionics Systems for Deep Space

NASA Technical Reports Server (NTRS)

Mojarradi, M. M.; Blaes, B.; Kolawa, E. A.; Blalock, B. J.; Li, H. W.; Buck, K.; Houge, D.

2001-01-01

To build the sensor intensive system-on-a-chip for the next generation spacecrafts for deep space, Center for Integration of Space Microsystems at JPL (CISM) takes advantage of the lower power rating and inherent radiation resistance of Silicon on Insulator technology (SOI). We are developing a suite of mixed-voltage and mixed-signal building blocks in Honeywell's SOI process that can enable the rapid integration of the next generation avionics systems with lower power rating, higher reliability, longer life, and enhanced radiation tolerance for spacecrafts such as the Europa Orbiter and Europa Lander. The mixed-voltage building blocks are predominantly for design of adaptive power management systems. Their design centers around an LDMOS structure that is being developed by Honeywell, Boeing Corp, and the University of Idaho. The mixed-signal building blocks are designed to meet the low power, extreme radiation requirement of deep space applications. These building blocks are predominantly used to interface analog sensors to the digital CPU of the next generation avionics system on a chip. Additional information is contained in the original extended abstract.

An optical microswitch chip integrated with silicon waveguides and touch-down electrostatic micromirrors

NASA Astrophysics Data System (ADS)

Jin, Young-Hyun; Seo, Kyoung-Sun; Cho, Young-Ho; Lee, Sang-Shin; Song, Ki-Chang; Bu, Jong-Uk

2004-12-01

We present an silicon-on-insulator (SOI) optical microswitch, composed of silicon waveguides and electrostatically actuated gold-coated silicon micromirrors integrated with laser diode (LD) receivers and photo diode (PD) transmitters. For a low switching voltage, we modify the conventional curved electrode microactuator into a new microactuator with touch-down beams. We fabricate the waveguides and the actuated micromirror using the inductively coupled plasma (ICP) etching process of SOI wafers. The fabricated microswitch operates at the switching voltage of 31.7 ± 4 V with the resonant frequency of 6.89 kHz. Compared to the conventional microactuator, the touch-down beam microactuator achieves 77.4% reduction of the switching voltage. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of 4.18 ± 0.25 dB. We discuss a feasible method to achieve the switching voltage lower than 10 V by reducing the residual stress in the insulation layers of touch-down beams to the level of 30 MPa. We also analyze the major source of micromirror loss, thereby presenting design guidelines for low-loss micromirror switches.

Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper

PubMed Central

Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan

2014-01-01

A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will output as the TE0 mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < −17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology. PMID:25402029

Proposal for fabrication-tolerant SOI polarization splitter-rotator based on cascaded MMI couplers and an assisted bi-level taper.

PubMed

Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan

2014-11-17

A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < -17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology.

Prediction and Measurement of Temperature Fields in Silicon-on-Insulator Electronic Circuits

DTIC Science & Technology

1995-08-01

common dimensions are given in Table 1. Almost all of the device power is dissipated in the channel. The electri- cally insulating implanted layer...data. Region or Component substrate Material SOI implanted insulating layers single-crystal silicon, 3 x 1015 boron atoms cm -3 Thermal... implanted silicon-dioxide layer in SOI wafers. The data for each device for varying powers fall near a line originating at P = 0 and T0 = 303 K

High breakdown voltage and high driving current in a novel silicon-on-insulator MESFET with high- and low-resistance boxes in the drift region

NASA Astrophysics Data System (ADS)

Naderi, Ali; Mohammadi, Hamed

2018-06-01

In this paper a novel silicon-on-insulator metal oxide field effect transistor (SOI-MESFET) with high- and low-resistance boxes (HLRB) is proposed. This structure increases the current and breakdown voltage, simultaneously. The semiconductor at the source side of the channel is doped with higher impurity than the other parts to reduce its resistance and increase the driving current as low-resistance box. An oxide box is implemented at the upper part of the channel from the drain region toward the middle of the channel as the high-resistance box. Inserting a high-resistance box increases the breakdown voltage and improves the RF performance of the device because of its higher tolerable electric field and modification in gate-drain capacitance, respectively. The high-resistance region reduces the current density of the device which is completely compensated by low-resistance box. A 92% increase in breakdown voltage and an 11% improvement in the device current have been obtained. Also, maximum oscillation frequency, unilateral power gain, maximum available gain, maximum stable gain, and maximum output power density are improved by 7%, 35%, 23%, 26%, and 150%, respectively. These results show that the HLRB-SOI-MESFET can be considered as a candidate to replace Conventional SOI-MESFET (C-SOI-MESFET) for high-voltage and high-frequency applications.

Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing

PubMed Central

Shi, Yaocheng; Ma, Ke; Dai, Daoxin

2016-01-01

A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator) nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0) and liquid sensing (ncl ~ 1.33) are considered. When using SOI nanowires (with a SiO2 buffer layer), the sensitivity for liquid sensing (S ~ 0.55) is higher than that for gas sensing (S ~ 0.35) due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0). The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm). In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43) while the fabrication tolerance is very small (i.e., ∆w < ±5 nm). The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity. PMID:26950132

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

NASA Astrophysics Data System (ADS)

Simoen, Eddy; Gaillardin, Marc; Paillet, Philippe; Reed, Robert A.; Schrimpf, Ron D.; Alles, Michael L.; El-Mamouni, Farah; Fleetwood, Daniel M.; Griffoni, Alessio; Claeys, Cor

2013-06-01

The aim of this review paper is to describe in a comprehensive manner the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies. Total Ionizing Dose (TID) response, heavy-ion microdose effects and single-event effects (SEEs) will be discussed. It is shown that a very high TID tolerance can be achieved by narrow-fin SOI FinFET architectures, while bulk FinFETs may exhibit similar TID response to the planar devices. Due to the vertical nature of FinFETs, a specific heavy-ion response can be obtained, whereby the angle of incidence becomes highly important with respect to the vertical sidewall gates. With respect to SEE, the buried oxide in the SOI FinFETs suppresses the diffusion tails from the charge collection in the substrate compared to the planar bulk FinFET devices. Channel lengths and fin widths are now comparable to, or smaller than the dimensions of the region affected by the single ionizing ions or lasers used in testing. This gives rise to a high degree of sensitivity to individual device parameters and source-drain shunting during ion-beam or laser-beam SEE testing. Simulations are used to illuminate the mechanisms observed in radiation testing and the progress and needs for the numerical modeling/simulation of the radiation response of advanced SOI and FinFET transistors are highlighted.

Sensitivity Enhancement in Si Nanophotonic Waveguides Used for Refractive Index Sensing.

PubMed

Shi, Yaocheng; Ma, Ke; Dai, Daoxin

2016-03-03

A comparative study is given for the sensitivity of several typical Si nanophotonic waveguides, including SOI (silicon-on-insulator) nanowires, nanoslot waveguides, suspended Si nanowires, and nanofibers. The cases for gas sensing (ncl ~ 1.0) and liquid sensing (ncl ~ 1.33) are considered. When using SOI nanowires (with a SiO₂ buffer layer), the sensitivity for liquid sensing (S ~ 0.55) is higher than that for gas sensing (S ~ 0.35) due to lower asymmetry in the vertical direction. By using SOI nanoslot waveguides, suspended Si nanowires, and Si nanofibers, one could achieve a higher sensitivity compared to sensing with a free-space beam (S = 1.0). The sensitivity for gas sensing is higher than that for liquid sensing due to the higher index-contrast. The waveguide sensitivity of an optimized suspended Si nanowire for gas sensing is as high as 1.5, which is much higher than that of a SOI nanoslot waveguide. Furthermore, the optimal design has very large tolerance to the core width variation due to the fabrication error (∆w ~ ±50 nm). In contrast, a Si nanofiber could also give a very high sensitivity (e.g., ~1.43) while the fabrication tolerance is very small (i.e., ∆w < ±5 nm). The comparative study shows that suspended Si nanowire is a good choice to achieve ultra-high waveguide sensitivity.

A High-Q Resonant Pressure Microsensor with Through-Glass Electrical Interconnections Based on Wafer-Level MEMS Vacuum Packaging

PubMed Central

Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

2014-01-01

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S. PMID:25521385

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.

PubMed

Luo, Zhenyu; Chen, Deyong; Wang, Junbo; Li, Yinan; Chen, Jian

2014-12-16

This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in "H" type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than -0.01% F.S/°C in the range of -40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.

Exploring the value of mixed methods within the At Home/Chez Soi housing first project: a strategy to evaluate the implementation of a complex population health intervention for people with mental illness who have been homeless.

PubMed

Macnaughton, Eric L; Goering, Paula N; Nelson, Geoffrey B

2012-05-02

This paper is a methodological case study that describes the At Home/Chez Soi (Housing First) Initiative's mixed-methods strategy for implementation evaluation and discusses the value of these methods in evaluating the implementation of such complex population health interventions. The Housing First (HF) model is being implemented in five cities: Vancouver, Winnipeg, Toronto, Montréal and Moncton. At Home/Chez Soi is an intervention trial that aims to address the issue of homelessness in people with mental health issues. The HF model emphasizes choices, hopefulness and connecting people with resources that make a difference to their quality of life. A component of HF is supported housing, which provides a rent subsidy and rapid access to housing of choice in private apartments; a second component is support. Quantitative and qualitative methods were used to evaluate HF implementation. The findings of this case study illustrate how the critical ingredients of complex interventions, such as HF, can be adapted to different contexts while implementation fidelity is maintained at a theoretical level. The findings also illustrate how the project's mixed methods approach helped to facilitate the adaptation process. Another value of this approach is that it identifies systemic and organizational factors (e.g., housing supply, discrimination, housing procurement strategy) that affect implementation of key elements of HF. In general, the approach provides information about both whether and how key aspects of the intervention are implemented effectively across different settings. It thus provides implementation data that are rigorous, contextually relevant and practical.

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

NASA Technical Reports Server (NTRS)

DeGregorio, Kelly; Wilson, Dale G.

2009-01-01

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

First Passage Time Analysis on Climate Indices

DTIC Science & Technology

2008-01-01

13) 12 with 0 1H< < . Here H is the Hurst exponent . For H = 1/2, the random process is the ordinary...14) with 0α ~1/2. Since the Hurst exponent of an ordinary Brownian motion is H = 1/2, the empirically observed...ρ = 10, 20, and 30 for SOI. From this figure it is seen that the tail exponent , ρα , is rather insensitive to the value of ρ . In particular one

Microelectromechanical Systems (MEMS) Photoacoustic (PA) Detector of Terahertz (THz) Radiation for Chemical Sensing

DTIC Science & Technology

2014-03-01

26 Feb 2014 Ivan Medvedev, PhD (Member) Date iv AFIT-ENG-14-M-58 Abstract In this research effort, a Microelectromechanical...7. Separation by implantation of oxygen (SIMOX) is a process of creating silicon- on-insulator (SOI) wafers. Oxygen ions are implanted into a silicon...wafer. The depth of the insulating layer is dependent upon the power used during ion implantation [14]. .............................. 16  Figure 8

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Spin-dependent quantum transport in nanoscaled geometries

NASA Astrophysics Data System (ADS)

Heremans, Jean J.

2011-10-01

We discuss experiments where the spin degree of freedom leads to quantum interference phenomena in the solid-state. Under spin-orbit interactions (SOI), spin rotation modifies weak-localization to weak anti-localization (WAL). WAL's sensitivity to spin- and phase coherence leads to its use in determining the spin coherence lengths Ls in materials, of importance moreover in spintronics. Using WAL we measure the dependence of Ls on the wire width w in narrow nanolithographic ballistic InSb wires, ballistic InAs wires, and diffusive Bi wires with surface states with Rashba-like SOI. In all three systems we find that Ls increases with decreasing w. While theory predicts the increase for diffusive wires with linear (Rashba) SOI, we experimentally conclude that the increase in Ls under dimensional confinement may be more universal, with consequences for various applications. Further, in mesoscopic ring geometries on an InAs/AlGaSb 2D electron system (2DES) we observe both Aharonov-Bohm oscillations due to spatial quantum interference, and Altshuler-Aronov-Spivak oscillations due to time-reversed paths. A transport formalism describing quantum coherent networks including ballistic transport and SOI allows a comparison of spin- and phase coherence lengths extracted for such spatial- and temporal-loop quantum interference phenomena. We further applied WAL to study the magnetic interactions between a 2DES at the surface of InAs and local magnetic moments on the surface from rare earth (RE) ions (Gd3+, Ho3+, and Sm3+). The magnetic spin-flip rate carries information about magnetic interactions. Results indicate that the heavy RE ions increase the SOI scattering rate and the spin-flip rate, the latter indicating magnetic interactions. Moreover Ho3+ on InAs yields a spin-flip rate with an unusual power 1/2 temperature dependence, possibly characteristic of a Kondo system. We acknowledge funding from DOE (DE-FG02-08ER46532).

Quality improvement through implementation of discharge order reconciliation.

PubMed

Lu, Yun; Clifford, Pamela; Bjorneby, Andreas; Thompson, Bruce; VanNorman, Samuel; Won, Katie; Larsen, Kevin

2013-05-01

A coordinated multidisciplinary process to reduce medication errors related to patient discharges to skilled-nursing facilities (SNFs) is described. After determining that medication errors were a frequent cause of readmission among patients discharged to SNFs, a medical center launched a two-phase quality-improvement project focused on cardiac and medical patients. Phase one of the project entailed a three-month failure modes and effects analysis of existing procedures discharge, followed by the development and pilot testing of a multidisciplinary, closed-loop workflow process involving staff and resident physicians, clinical nurse coordinators, and clinical pharmacists. During pilot testing of the new workflow process, the rate of discharge medication errors involving SNF patients was tracked, and data on medication-related readmissions in a designated intervention group (n = 87) and a control group of patients (n = 1893) discharged to SNFs via standard procedures during a nine-month period were collected, with the data stratified using severity of illness (SOI) classification. Analysis of the collected data indicated a cumulative 30-day medication-related readmission rate for study group patients in the minor, moderate, and major SOI categories of 5.4% (4 of 74 patients), compared with a rate of 9.5% (169 of 1780 patients) in the control group. In phase 2 of the project, the revised SNF discharge medication reconciliation procedure was implemented throughout the hospital; since hospitalwide implementation of the new workflow, the readmission rate for SNF patients has been maintained at about 6.7%. Implementing a standardized discharge order reconciliation process that includes pharmacists led to decreased readmission rates and improved care for patients discharged to SNFs.

Planning a multi-site, complex intervention for homeless people with mental illness: the relationships between the national team and local sites in Canada's At Home/Chez Soi project.

PubMed

Nelson, Geoffrey; Macnaughton, Eric; Goering, Paula; Dudley, Michael; O'Campo, Patricia; Patterson, Michelle; Piat, Myra; Prévost, Natasha; Strehlau, Verena; Vallée, Catherine

2013-06-01

This research focused on the relationships between a national team and five project sites across Canada in planning a complex, community intervention for homeless people with mental illness called At Home/Chez Soi, which is based on the Housing First model. The research addressed two questions: (a) what are the challenges in planning? and (b) what factors that helped or hindered moving project planning forward? Using qualitative methods, 149 national, provincial, and local stakeholders participated in key informant or focus group interviews. We found that planning entails not only intervention and research tasks, but also relational processes that occur within an ecology of time, local context, and values. More specifically, the relationships between the national team and the project sites can be conceptualized as a collaborative process in which national and local partners bring different agendas to the planning process and must therefore listen to, negotiate, discuss, and compromise with one another. A collaborative process that involves power-sharing and having project coordinators at each site helped to bridge the differences between these two stakeholder groups, to find common ground, and to accomplish planning tasks within a compressed time frame. While local context and culture pushed towards unique adaptations of Housing First, the principles of the Housing First model provided a foundation for a common approach across sites and interventions. The implications of the findings for future planning and research of multi-site, complex, community interventions are noted.

Canadian Space Agency Space Station Freedom utilization plans

NASA Technical Reports Server (NTRS)

Faulkner, James; Wilkinson, Ron

1992-01-01

Under the terms of the NASA/CSA Memorandum of Understanding, Canada will contribute the Mobile Servicing System and be entitled to use 3 percent of all Space Station utilization resources and user accommodations over the 30 year life of the Station. Equally importantly Canada, like NASA, can begin to exploit these benefits as soon as the Man-Tended Capability (MTC) phase begins, in early 1997. Canada has been preparing its scientific community to fully utilize the Space Station for the past five years; most specifically by encouraging, and providing funding, in the area of Materials Science and Applications, and in the area of Space Life Sciences. The goal has been to develop potential applications and an experienced and proficient Canadian community able to effectively utilize microgravity environment facilities such as Space Station Freedom. In addition, CSA is currently supporting four facilities; a Laser Test System, a Large Motion Isolation Mount, a Canadian Float Zone Furnace, and a Canadian Protein Crystallization Apparatus. In late April of this year CSA sent out a Solicitation of Interest (SOI) to potential Canadian user from universities, industry, and government. The intent of the SOI was to determine who was interested, and the type of payloads which the community at large intended to propose. The SOI will be followed by the release of an Announcement of Opportunity (AO) following governmental approval of the Long Term Space plan later this year, or early next year. Responses to the AO will be evaluated and prioritized in a fair and impartial payload selection process, within the guidelines set by our international partners and the Canadian Government. Payload selection is relatively simple compared to the development and qualification process. An end-to-end user support program is therefore also being defined. Much of this support will be provided at the new headquarters currently being built in St. Hubert, Quebec. It is recognized that utilizing the Space Station could be expensive for users; costing in many cases millions of dollars to get a payload from conception to retrieval. It is also recognized that some of the potential users cannot or will not invest a lot of money or effort into Space Station utilization, unless there is a perceived significant commercial potential. How best to fund Space Station payloads is under study. Space Station Freedom will provide the first opportunity for Canada to conduct experiments in a long-duration microgravity environment. CSA have been developing and funding potential users for some time, and considerable interest has been shown by the response to our SOI earlier this year. Canada can be one of the two earliest users for the Space Station, along with NASA. We hope to take full advantage of this opportunity.

Canadian Space Agency Space Station Freedom utilization plans

NASA Astrophysics Data System (ADS)

Faulkner, James; Wilkinson, Ron

Under the terms of the NASA/CSA Memorandum of Understanding, Canada will contribute the Mobile Servicing System and be entitled to use 3 percent of all Space Station utilization resources and user accommodations over the 30 year life of the Station. Equally importantly Canada, like NASA, can begin to exploit these benefits as soon as the Man-Tended Capability (MTC) phase begins, in early 1997. Canada has been preparing its scientific community to fully utilize the Space Station for the past five years; most specifically by encouraging, and providing funding, in the area of Materials Science and Applications, and in the area of Space Life Sciences. The goal has been to develop potential applications and an experienced and proficient Canadian community able to effectively utilize microgravity environment facilities such as Space Station Freedom. In addition, CSA is currently supporting four facilities; a Laser Test System, a Large Motion Isolation Mount, a Canadian Float Zone Furnace, and a Canadian Protein Crystallization Apparatus. In late April of this year CSA sent out a Solicitation of Interest (SOI) to potential Canadian user from universities, industry, and government. The intent of the SOI was to determine who was interested, and the type of payloads which the community at large intended to propose. The SOI will be followed by the release of an Announcement of Opportunity (AO) following governmental approval of the Long Term Space plan later this year, or early next year. Responses to the AO will be evaluated and prioritized in a fair and impartial payload selection process, within the guidelines set by our international partners and the Canadian Government. Payload selection is relatively simple compared to the development and qualification process. An end-to-end user support program is therefore also being defined. Much of this support will be provided at the new headquarters currently being built in St. Hubert, Quebec. It is recognized that utilizing the Space Station could be expensive for users; costing in many cases millions of dollars to get a payload from conception to retrieval. It is also recognized that some of the potential users cannot or will not invest a lot of money or effort into Space Station utilization, unless there is a perceived significant commercial potential. How best to fund Space Station payloads is under study. Space Station Freedom will provide the first opportunity for Canada to conduct experiments in a long-duration microgravity environment. CSA have been developing and funding potential users for some time, and considerable interest has been shown by the response to our SOI earlier this year.

Impact of the 2001 Tohoku-oki earthquake to Tokyo Metropolitan area observed by the Metropolitan Seismic Observation network (MeSO-net)

NASA Astrophysics Data System (ADS)

Hirata, N.; Hayashi, H.; Nakagawa, S.; Sakai, S.; Honda, R.; Kasahara, K.; Obara, K.; Aketagawa, T.; Kimura, H.; Sato, H.; Okaya, D. A.

2011-12-01

The March 11, 2011 Tohoku-oki earthquake brought a great impact to the Tokyo metropolitan area in both seismological aspect and seismic risk management although Tokyo is located 340 km from the epicenter. The event generated very strong ground motion even in the metropolitan area and resulted severe requifaction in many places of Kanto district. National and local governments have started to discuss counter measurement for possible seismic risks in the area taking account for what they learned from the Tohoku-oki event which is much larger than ever experienced in Japan Risk mitigation strategy for the next greater earthquake caused by the Philippine Sea plate (PSP) subducting beneath the Tokyo metropolitan area is of major concern because it caused past mega-thrust earthquakes, such as the 1703 Genroku earthquake (M8.0) and the 1923 Kanto earthquake (M7.9). An M7 or greater (M7+) earthquake in this area at present has high potential to produce devastating loss of life and property with even greater global economic repercussions. The Central Disaster Management Council of Japan estimates that an M7+ earthquake will cause 11,000 fatalities and 112 trillion yen (about 1 trillion US$) economic loss. In order to mitigate disaster for greater Tokyo, the Special Project for Earthquake Disaster Mitigation in the Tokyo Metropolitan Area was launched in collaboration with scientists, engineers, and social-scientists in nationwide institutions. We will discuss the main results that are obtained in the respective fields which have been integrated to improve information on the strategy assessment for seismic risk mitigation in the Tokyo metropolitan area; the project has been much improved after the Tohoku event. In order to image seismic structure beneath the Metropolitan Tokyo area we have developed Metropolitan Seismic Observation network (MeSO-net; Hirata et al., 2009). We have installed 296 seismic stations every few km (Kasahara et al., 2011). We conducted seismic tomography of P- and S- wave structure, seismic interferometry for shallow structure and using the dense MeSO-net data. We observed the 2011 Tohoku-oki event and its aftershocks including M7.7 event off Ibaraki prefecture, which is the largest aftershock so far. We imaged source radiation energy using the MeSO-net data by the back-projection method (Honda et al., 2011). We found seismic activity in the Kanto region has been activated after the event, suggesting increased seismic hazard in Kanto region even for plate boundary events. We use a new image of PSP and Pacific plate. We evaluate potential zones of the M7+ earthquake on the plate boundary and within the PSP slab which will be used for risk mitigation study by a socio-science group. We will also discuss a future plan to continue our effort in seismic risk mitigation in Tokyo Metropolitan area, stress regime of which is seriously changed by the Tohoku-oki event. This is supported by the Special Project for Earthquake Disaster Mitigation in Tokyo Metropolitan Area

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Almad

2009-01-01

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode

NASA Astrophysics Data System (ADS)

Kong, Duanhua; Kim, Taek; Kim, Sihan; Hong, Hyungi; Shcherbatko, Igor; Park, Youngsoo; Shin, Dongjae; Ha, Kyoung-Ho; Jeong, Gitae

2014-03-01

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

Frequency Dependence of Single-event Upset in Advanced Commerical PowerPC Microprocessors

NASA Technical Reports Server (NTRS)

Irom, Frokh; Farmanesh, Farhad F.; Swift, Gary M.; Johnston, Allen H.

2004-01-01

This paper examines single-event upsets in advanced commercial SOI microprocessors in a dynamic mode, studying SEU sensitivity of General Purpose Registers (GPRs) with clock frequency. Results are presented for SOI processors with feature sizes of 0.18 microns and two different core voltages. Single-event upset from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequency up to 1GHz. Frequency and core voltage dependence of single-event upsets in registers is discussed.

High Efficiency Photovoltaic and Plasmonic Devices

DTIC Science & Technology

2011-07-01

on Si or SOI substrate along with its band alignment. This elongated mesa forms a strip channel aveguide……………………………….…4 Figure 3 Radiative and...lattice matched GeSn relaxed buffer on Si or SOI substrate along with its band alignment. This elongated mesa forms a strip channel waveguide...Appl. Phys. Lett. 90, 251105 (2007). 8. R. A. Soref and C. H. Perry, J. Appl. Phys. 69, 539 (1991). 9. H. P. L. de Guevara, A. G. Rodriguez , H

Photosensitive adhesive bonding process of magnetooptic waveguides with Si guiding layer for optical nonreciprocal devices

NASA Astrophysics Data System (ADS)

Choowitsakunlert, Salinee; Takagiwa, Kenji; Kobashigawa, Takuya; Hosoya, Nariaki; Silapunt, Rardchawadee; Yokoi, Hideki

2018-05-01

A photosensitive adhesive bonding process for a magnetooptic waveguide for an optical isolator employing a nonreciprocal guided-radiation mode conversion is investigated at 1.55 µm. The magnetooptic waveguide is a straight rib type, and it is fabricated by bonding the Si guiding layer to a magnetic garnet. In the fabrication process, an adhesive material is diluted to obtain a certain thickness before depositing on a silicon-on-insulator (SOI) substrate. The relationship between the percent dilution ratio and the thickness of the adhesive layer is considered. The smallest gap thickness is found to be 0.66 µm at a dilution ratio of 2%.

Examination of the largest-possible tsunamis (Level 2) generated along the Nankai and Suruga troughs during the past 4000 years based on studies of tsunami deposits from the 2011 Tohoku-oki tsunami

NASA Astrophysics Data System (ADS)

Kitamura, Akihisa

2016-12-01

Japanese historical documents reveal that Mw 8 class earthquakes have occurred every 100-150 years along the Suruga and Nankai troughs since the 684 Hakuho earthquake. These earthquakes have commonly caused large tsunamis with wave heights of up to 10 m in the Japanese coastal area along the Suruga and Nankai troughs. From the perspective of tsunami disaster management, these tsunamis are designated as Level 1 tsunamis and are the basis for the design of coastal protection facilities. A Mw 9.0 earthquake (the 2011 Tohoku-oki earthquake) and a mega-tsunami with wave heights of 10-40 m struck the Pacific coast of the northeastern Japanese mainland on 11 March 2011, and far exceeded pre-disaster predictions of wave height. Based on the lessons learned from the 2011 Tohoku-oki earthquake, the Japanese Government predicted the tsunami heights of the largest-possible tsunami (termed a Level 2 tsunami) that could be generated in the Suruga and Nankai troughs. The difference in wave heights between Level 1 and Level 2 tsunamis exceeds 20 m in some areas, including the southern Izu Peninsula. This study reviews the distribution of prehistorical tsunami deposits and tsunami boulders during the past 4000 years, based on previous studies in the coastal area of Shizuoka Prefecture, Japan. The results show that a tsunami deposit dated at 3400-3300 cal BP can be traced between the Shimizu, Shizuoka and Rokken-gawa lowlands, whereas no geologic evidence related to the corresponding tsunami (the Rokken-gawa-Oya tsunami) was found on the southern Izu Peninsula. Thus, the Rokken-gawa-Oya tsunami is not classified as a Level 2 tsunami.

Postseismic slip of 2011 Tohoku-oki Earthquake across the trench axis through long-term geodetic observations

NASA Astrophysics Data System (ADS)

Yamamoto, R.; Hino, R.; Kido, M.; Osada, Y.; Honsho, C.

2017-12-01

Since postseismic deformation across 2011 Tohoku-oki Earthquake is strongly affected by viscoelastic relaxation, it is difficult to identify postseismic slip from onshore (e.g. GNSS) and offshore (e.g. GPS-Acoustic: GPS-A) observations. To track postseismic slip directly, we installed acoustic ranging instruments across the axis of the central Japan Trench, off-Miyagi, near the region of large coseismic motion (>50 m) happened during 2011 Tohoku-oki Earthquake.Direct Path Ranging (DPR) measures two-way travel time between a pair of transponders settled on the seafloor. Baseline length can be obtained from calculating travel time and sound velocity which is corrected for time-varying temperature and pressure beforehand. We further made correction for the motion of acoustic elements due to attitude changes of the instruments. Baseline changes can be detected precisely by periodic ranging during observation.We have conducted observations during three times (2013, 2014 - 2015, and 2015 - 2016), and revealed that no significant shortenings across the trench axis took place. It follows that no shallow postseismic slip had occurred off-Miyagi, at least from 2013 to 2016. We examined the accuracy of baseline length measurements and can observed 1.0 ppm (1.0 mm for 1 km baseline) errors, which is small enough. Our results are consistent with the postseismic slip distribution model based on GPS-A observations.Acknowledgements: This research is supported by JSPS KAKENHI (26000002). The installation and recovery of instruments were executed during R/V Kairei (KR13-09; KR15-15), R/V Hakuho-maru (KH-13-05; KH-17-J02), R/V Shinsei-maru (KS-14-17; KS-15-03; KS-16-14).

Source models of M-7 class earthquakes in the rupture area of the 2011 Tohoku-Oki Earthquake by near-field tsunami modeling

NASA Astrophysics Data System (ADS)

Kubota, T.; Hino, R.; Inazu, D.; Saito, T.; Iinuma, T.; Suzuki, S.; Ito, Y.; Ohta, Y.; Suzuki, K.

2012-12-01

We estimated source models of small amplitude tsunami associated with M-7 class earthquakes in the rupture area of the 2011 Tohoku-Oki Earthquake using near-field records of tsunami recorded by ocean bottom pressure gauges (OBPs). The largest (Mw=7.3) foreshock of the Tohoku-Oki earthquake, occurred on 9 Mar., two days before the mainshock. Tsunami associated with the foreshock was clearly recorded by seven OBPs, as well as coseismic vertical deformation of the seafloor. Assuming a planer fault along the plate boundary as a source, the OBP records were inverted for slip distribution. As a result, the most of the coseismic slip was found to be concentrated in the area of about 40 x 40 km in size and located to the north-west of the epicenter, suggesting downdip rupture propagation. Seismic moment of our tsunami waveform inversion is 1.4 x 10^20 Nm, equivalent to Mw 7.3. On 2011 July 10th, an earthquake of Mw 7.0 occurred near the hypocenter of the mainshock. Its relatively deep focus and strike-slip focal mechanism indicate that this earthquake was an intraslab earthquake. The earthquake was associated with small amplitude tsunami. By using the OBP records, we estimated a model of the initial sea-surface height distribution. Our tsunami inversion showed that a pair of uplift/subsiding eyeballs was required to explain the observed tsunami waveform. The spatial pattern of the seafloor deformation is consistent with the oblique strike-slip solution obtained by the seismic data analyses. The location and strike of the hinge line separating the uplift and subsidence zones correspond well to the linear distribution of the aftershock determined by using local OBS data (Obana et al., 2012).

Trace Metal Variations Detected by Using Continuous XRF Core Scanning: Preliminary Results on Redox-sensitive Elements in East Sea, Korea

NASA Astrophysics Data System (ADS)

Cho, J. H.; Shin, D. H.; Kim, J. K.; Hyun, S.; Jang, S.; Kum, B. C.; Yoo, K. C.; Moh, T. J.

2017-12-01

The cruise of R/V ISABU focused on the detailed geological, geochemical and paleoceanographical investigations in the East Sea. The purpose of this cruise was the use of technically sophisticated Giant Piston Corer (GPC, OSIL) as well as the recovery of the longest piston core (20.7 m, ISA-16ESUB-2B) ever recorded in KIOST with a high resolution of stratigraphic sedimentary layer. The Late Pleistocene to the Holocene sediments in the Ulleung Basin are characterized by several volcanic tephra layers with alternations of fine light and dark clayey layers, reflecting variability in the paleoenvironment. Based on the previous researches and AMS results, we determine the ages of sedimentary layers from three tephra layers, 1.86 mbsf (U-Oki, 10.7 ka), 3.31 mbsf (AT, 29.4 ka), 11.67 mbsf (Aso-4, 88.0 ka) and 17.09 mbsf (Aso-3, 133.0 ka) respectively. Sediment textures are identified as hemipelagic mud, bioturbated mud and laminated mud with tephra layers. The sedimentation rates of each intervals are 0.174 m/kyr (present to U-Oki), 0.078 m/kyr (U-Oki to AT), 0.143 m/kyr (AT to Aso-4) and 0.120 m/kyr (Aso-4 to Aso-3) respectively. Sensitivity of XRF core scanner was obtained by establishing equivalences between peak areas. Element concentrations are analyzed by traditional techniques such as ICP-MS, ICP-OES. The Ca/Fe ratio reflects carbonate content and ISA-16ESUB-2B core shows strong correlation to sedimentary horizons. Sr/Ca ratio has good correlation with sedimentary units. Enhanced Sr contents indicates strong surface ocean production. Br/Cl ratio are high peak during MIS 5.5. Br content implies generally high organic rich sediments.

Very low frequency earthquakes in Tohoku-Oki recorded by short-period ocean bottom seismographs

NASA Astrophysics Data System (ADS)

Takahashi, H.; Hino, R.; Ohta, Y.; Uchida, N.; Suzuki, S.; Shinohara, M.; Nakatani, Y.; Matsuzawa, T.

2017-12-01

Various kind of slow earthquakes have been found along many plate boundary zones in the world (Obara, and Kato, 2016). In the Tohoku subduction zone where slow event activities have been considered insignificant, slow slip events associated with low frequency tremors were identified prior to the 2011 Tohoku-Oki earthquake based on seafloor geodetic and seismographical observations. Recently very low frequency earthquakes (VLFEs) have been discovered by inspecting onshore broad-band seismograms. Although the activity of the detected VLFEs is low and the VLFEs occurred in the limited area, VLFEs tends to occur successively in a short time period. In this study, we try to characterize the VLFEs along the Japan Trench based on the seismograms obtained by the instruments deployed near the estimated epicenters.Temporary seismic observations using Ocean Bottom Seismometers (OBSs) have been carried out several times after the 2011 Tohoku-Oki earthquake, and several VLFE activities were observed during the deployments of the OBSs. Amplitudes of horizontal component seismograms of the OBSs grow shortly after the estimated origin times of the VLFEs identified by the onshore seismograms, even though the sensors are 4.5 Hz geophones. It is difficult to recognize evident onsets of P or S waves, correspondence between order of arrivals of discernible wave packets and their amplitudes suggests that these wave packets are seismic signals radiated from the VLFE sources. The OBSs detect regular local earthquakes of the similar magnitudes as the VLFEs. Signal powers of the possible VLFE seismograms are comparable to the regular earthquakes in the frequency range < 1 Hz, while significant deficiency of higher frequency components are observed.

A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror

NASA Astrophysics Data System (ADS)

Sun, DeGui

2013-09-01

In a silicon-on-insulator (SOI) waveguide corner mirror (WCM) structure, with the quantum process of a frustrated total internal reflection (FTIR) phenomenon and the time delay principle in the two-dimensional potential barrier tunneling process of a mass of particles, we derive an accurate physical model for the Goos-Hanchen (GH) shift of optical guided-mode in the FTIR process, and in principle match the GH shift jumping states with the independent guided-modes. Then, we propose and demonstrate a new regime of 1 × N digital optical switches with a matching state between the free-carrier dispersion (FCD) based refractive index modulation (RIM) of silicon to create a GH shift jumping function of a photonic signal at the reflecting interface and the independent guided-modes in the FTIR process, where a MOS-capacitor type electro-optic modulation regime is proposed and discussed to realize an effective FCD-based RIM. At the critical matching state, i.e., the incident of an optical beam is at the vicinity of Brewster angle in the WCM, a mini-change of refractive index of waveguide material can cause a great jump of GH shift along the FTIR reflecting interface, and further a 1 × N digital optical switching process could be realized. For a 350-500 nm single-mode rib waveguide made on the 220 nm CMOS-compatible SOI substrate and with the FCD effect based RIM of silicon crystal, a concentration variation of 1018-1019 cm-3 has caused a 0.5-2.5 μm GH shift of reflected beam, which is at 2-5 times of a mode-size and hence radically convinces an optical switching function with a 1 × 3-1 × 10 scale.

Heavy minerals in the 2011 Tohoku-oki tsunami deposits—insights into sediment sources and hydrodynamics

NASA Astrophysics Data System (ADS)

Jagodziński, Robert; Sternal, Beata; Szczuciński, Witold; Chagué-Goff, Catherine; Sugawara, Daisuke

2012-12-01

The 2011 Tohoku-oki tsunami left sand and mud deposits more than 4 km inland on the coastal plain of Sendai, Japan. The tsunami deposits, pre-tsunami soils and beach sediments were analysed for grain size, and heavy mineral content and assemblages to test the applicability of heavy mineral analyses in the identification of tsunami deposits and interpretation of associated sedimentation processes. Heavy minerals comprised on average 35% of the tsunami deposit in the 0.125-0.25 mm grain size fraction. The most common were orthopyroxenes, clinopyroxenes, amphiboles, limonites and opaque minerals. Heavy mineral concentrations and assemblages were similar in the tsunami deposits, beach and pre-tsunami soils and sediments and thus tsunami deposits could not simply be identified based on their heavy minerals. Sediment provenance analysis revealed that tsunami deposits left within 1.5 km of the shoreline were mostly eroded from the beach, dune and local soils, while deposits farther inland (> 1.5 km) were mostly derived from local soil erosion. No evidence was found for a significant contribution of offshore sediments. Detailed analyses revealed that the lowermost portion of tsunami deposits was mostly of local origin, while the sediment source of the upper portion was variable. A comparison with a previous study of heavy minerals in 2004 IOT deposits confirms that heavy minerals in tsunami deposits are mostly source-dependent and may represent a useful supplementary tool in studies of tsunami deposits. However, the interpretation must always be placed in the local geological context and corroborated with other "tsunami proxies".

Influence of regional-scale anthropogenic activity in northeast Asia on seasonal variations of surface ozone and carbon monoxide observed at Oki, Japan

NASA Astrophysics Data System (ADS)

Pochanart, Pakpong; Hirokawa, Jun; Kajii, Yoshizumi; Akimoto, Hajime; Nakao, Makoto

1999-02-01

Surface O3 and CO measurements were carried out at Oki, Japan during March 1994 to February 1996 in order to elucidate the processes determining temporal variations of O3 and CO in the northeast Asian Pacific rim region. The isentropic trajectory analysis was applied to sort out the influences of the air mass exchange under the Asian monsoon system and the regional-scale photochemical buildup of O3. The trajectories were categorized into five groups which cover background and regionally polluted air masses. The seasonal cycles of O3 and CO in the background continental air mass revealed spring maximum-summer minimum with averaged concentrations ranging from 32 and 120 ppb to 45 and 208 ppb, respectively. In contrast, O3 concentrations in the regionally polluted continental air mass ranged from 44 to 57 ppb and showed a winter minimum and a spring-summer-autumn broad maximum, which was characterized by photochemical O3 production due to anthropogenic activities in northeast Asia. CO concentrations in the same air mass showed a spring maximum of 271 ppb and a summer-autumn minimum of 180 ppb. The photochemical buildup of O3 resulting from anthropogenic activities in this region was estimated to be 21 ppb in summer, while its production was insignificant, an average 3 ppb, in winter. A comparison between data in northeast Asia and in Europe shows many similarities, supporting the contention that photochemical buildup of O3 from large-scale precursor emissions in both regions is very significant.

Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring.

PubMed

Malits, Maria; Brouk, Igor; Nemirovsky, Yael

2018-05-19

This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage ( V t ) can be used to accurately measure the chip local temperature by using a V t extractor circuit. Furthermore, the circuit's performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the V t extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K⁻500 K temperature range while consuming only 30 µW during operation.

Broadband non-polarizing beam splitter based on guided mode resonance effect

NASA Astrophysics Data System (ADS)

Ma, Jian-Yong; Xu, Cheng; Qiang, Ying-Huai; Zhu, Ya-Bo

2011-10-01

A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ~50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm~1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.

Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings.

PubMed

Sah, Parimal; Das, Bijoy Krishna

2018-03-20

It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500  nm≤λ≤1650  nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be ∼24  nm, whereas the device with two cascaded gratings with slightly detuned periods (ΔΛ=2  nm) exhibits a pass bandwidth down to ∼10  nm.

Evidence for a low-temperature magnetic ground state in double-perovskite iridates with I r5 +(5 d4) ions

NASA Astrophysics Data System (ADS)

Terzic, J.; Zheng, H.; Ye, Feng; Zhao, H. D.; Schlottmann, P.; De Long, L. E.; Yuan, S. J.; Cao, G.

2017-08-01

We report an unusual magnetic ground state in single-crystal, double-perovskite B a2YIr O6 and Sr-doped B a2YIr O6 with I r5 +(5 d4) ions. Long-range magnetic order below 1.7 K is confirmed by dc magnetization, ac magnetic susceptibility, and heat-capacity measurements. The observed magnetic order is extraordinarily delicate and cannot be explained in terms of either a low-spin S =1 state, or a singlet Jeff=0 state imposed by the spin-orbit interactions (SOI). Alternatively, the magnetic ground state appears consistent with a SOI that competes with comparable Hund's rule coupling and inherently large electron hopping, which cannot stabilize the singlet Jeff=0 ground state. However, this picture is controversial, and conflicting magnetic behavior for these materials is reported in both experimental and theoretical studies, which highlights the intricate interplay of interactions that determine the ground state of materials with strong SOI.

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

PubMed Central

2010-01-01

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO2/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films. PMID:21170391

Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET.

PubMed

Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R; Ganguly, Udayan

2017-08-15

Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10 11 neuron based) large neural networks.

Hadal disturbance in the Japan Trench induced by the 2011 Tohoku–Oki Earthquake

PubMed Central

Oguri, Kazumasa; Kawamura, Kiichiro; Sakaguchi, Arito; Toyofuku, Takashi; Kasaya, Takafumi; Murayama, Masafumi; Fujikura, Katsunori; Glud, Ronnie N.; Kitazato, Hiroshi

2013-01-01

In situ video observations and sediment core samplings were performed at two hadal sites in the Japan Trench on July, 2011, four months after the Tohoku–Oki earthquake. Video recordings documented dense nepheloid layers extending ~30–50 m above the sea bed. At the trench axis, benthic macrofauna was absent and dead organisms along with turbid downslope current were observed. The top 31 cm of sediment in the trench axis revealed three recent depositions events characterized by elevated 137Cs levels and alternating sediment densities. At 4.9 km seaward from the trench axis, little deposition was observed but the surface sediment contained 134Cs from the Fukushima Dai–ichi nuclear disaster. We argue that diatom blooms observed by remote sensing facilitated rapid deposition of 134Cs to hadal environment and the aftershocks induced successive sediment disturbances and maintained dense nepheloid layers in the trench even four months after the mainshock. PMID:23715086

New insights of tsunami hazard from the 2011 Tohoku-oki event

USGS Publications Warehouse

Goto, K.; Chague-Goff, C.; Fujino, S.; Goff, J.; Jaffe, B.; Nishimura, Y.; Richmond, B.; Sugawara, D.; Szczucinski, W.; Tappin, D.R.; Witter, R.C.; Yulianto, E.

2011-01-01

We report initial results from our recent field survey documenting the inundation and resultant deposits of the 2011 Tohoku-oki tsunami from Sendai Plain, Japan. The tsunami inundated up to 4.5. km inland but the > 0.5 cm-thick sand deposit extended only 2.8. km (62% of the inundation distance). The deposit however continued as a mud layer to the inundation limit. The mud deposit contained high concentrations of water-leachable chloride and we conclude that geochemical markers and microfossil data may prove to be useful in identifying the maximum inundation limit of paleotsunamis that could extend well beyond any preserved sand layer. Our newly acquired data on the 2011 event suggest that previous estimates of paleotsunamis (e.g. 869 AD J??gan earthquake and tsunami) in this area have probably been underestimated. If the 2011 and 869 AD events are indeed comparable, the risk from these natural hazards in Japan is much greater than previously recognized. ?? 2011 Elsevier B.V.

Broadscale postseismic gravity change following the 2011 Tohoku-Oki earthquake and implication for deformation by viscoelastic relaxation and afterslip.

PubMed

Han, Shin-Chan; Sauber, Jeanne; Pollitz, Fred

2014-08-28

The analysis of GRACE gravity data revealed postseismic gravity increase by 6 μGal over a 500 km scale within a couple of years after the 2011 Tohoku-Oki earthquake, which is nearly 40-50% of the coseismic gravity change. It originates mostly from changes in the isotropic component corresponding to the M rr moment tensor element. The exponential decay with rapid change in a year and gradual change afterward is a characteristic temporal pattern. Both viscoelastic relaxation and afterslip models produce reasonable agreement with the GRACE free-air gravity observation, while their Bouguer gravity patterns and seafloor vertical deformations are distinctly different. The postseismic gravity variation is best modeled by the biviscous relaxation with a transient and steady state viscosity of 10 18 and 10 19  Pa s, respectively, for the asthenosphere. Our calculated higher-resolution viscoelastic relaxation model, underlying the partially ruptured elastic lithosphere, yields the localized postseismic subsidence above the hypocenter reported from the GPS-acoustic seafloor surveying.

Broadscale postseismic gravity change following the 2011 Tohoku-Oki earthquake and implication for deformation by viscoelastic relaxation and afterslip

PubMed Central

Han, Shin-Chan; Sauber, Jeanne; Pollitz, Fred

2014-01-01

The analysis of GRACE gravity data revealed postseismic gravity increase by 6 μGal over a 500 km scale within a couple of years after the 2011 Tohoku-Oki earthquake, which is nearly 40–50% of the coseismic gravity change. It originates mostly from changes in the isotropic component corresponding to the Mrr moment tensor element. The exponential decay with rapid change in a year and gradual change afterward is a characteristic temporal pattern. Both viscoelastic relaxation and afterslip models produce reasonable agreement with the GRACE free-air gravity observation, while their Bouguer gravity patterns and seafloor vertical deformations are distinctly different. The postseismic gravity variation is best modeled by the biviscous relaxation with a transient and steady state viscosity of 1018 and 1019 Pa s, respectively, for the asthenosphere. Our calculated higher-resolution viscoelastic relaxation model, underlying the partially ruptured elastic lithosphere, yields the localized postseismic subsidence above the hypocenter reported from the GPS-acoustic seafloor surveying. PMID:25821272

Unexpected biotic resilience on the Japanese seafloor caused by the 2011 Tōhoku-Oki tsunami

NASA Astrophysics Data System (ADS)

Toyofuku, Takashi; Duros, Pauline; Fontanier, Christophe; Mamo, Briony; Bichon, Sabrina; Buscail, Roselyne; Chabaud, Gérard; Deflandre, Bruno; Goubet, Sarah; Grémare, Antoine; Menniti, Christophe; Fujii, Minami; Kawamura, Kiichiro; Koho, Karoliina Annika; Noda, Atsushi; Namegaya, Yuichi; Oguri, Kazumasa; Radakovitch, Olivier; Murayama, Masafumi; de Nooijer, Lennart Jan; Kurasawa, Atushi; Ohkawara, Nina; Okutani, Takashi; Sakaguchi, Arito; Jorissen, Frans; Reichart, Gert-Jan; Kitazato, Hiroshi

2014-12-01

On March 11th, 2011 the Mw 9.0 2011 Tōhoku-Oki earthquake resulted in a tsunami which caused major devastation in coastal areas. Along the Japanese NE coast, tsunami waves reached maximum run-ups of 40 m, and travelled kilometers inland. Whereas devastation was clearly visible on land, underwater impact is much more difficult to assess. Here, we report unexpected results obtained during a research cruise targeting the seafloor off Shimokita (NE Japan), shortly (five months) after the disaster. The geography of the studied area is characterized by smooth coastline and a gradually descending shelf slope. Although high-energy tsunami waves caused major sediment reworking in shallow-water environments, investigated shelf ecosystems were characterized by surprisingly high benthic diversity and showed no evidence of mass mortality. Conversely, just beyond the shelf break, the benthic ecosystem was dominated by a low-diversity, opportunistic fauna indicating ongoing colonization of massive sand-bed deposits.

Unexpected biotic resilience on the Japanese seafloor caused by the 2011 Tōhoku-Oki tsunami

PubMed Central

Toyofuku, Takashi; Duros, Pauline; Fontanier, Christophe; Mamo, Briony; Bichon, Sabrina; Buscail, Roselyne; Chabaud, Gérard; Deflandre, Bruno; Goubet, Sarah; Grémare, Antoine; Menniti, Christophe; Fujii, Minami; Kawamura, Kiichiro; Koho, Karoliina Annika; Noda, Atsushi; Namegaya, Yuichi; Oguri, Kazumasa; Radakovitch, Olivier; Murayama, Masafumi; de Nooijer, Lennart Jan; Kurasawa, Atushi; Ohkawara, Nina; Okutani, Takashi; Sakaguchi, Arito; Jorissen, Frans; Reichart, Gert-Jan; Kitazato, Hiroshi

2014-01-01

On March 11th, 2011 the Mw 9.0 2011 Tōhoku-Oki earthquake resulted in a tsunami which caused major devastation in coastal areas. Along the Japanese NE coast, tsunami waves reached maximum run-ups of 40 m, and travelled kilometers inland. Whereas devastation was clearly visible on land, underwater impact is much more difficult to assess. Here, we report unexpected results obtained during a research cruise targeting the seafloor off Shimokita (NE Japan), shortly (five months) after the disaster. The geography of the studied area is characterized by smooth coastline and a gradually descending shelf slope. Although high-energy tsunami waves caused major sediment reworking in shallow-water environments, investigated shelf ecosystems were characterized by surprisingly high benthic diversity and showed no evidence of mass mortality. Conversely, just beyond the shelf break, the benthic ecosystem was dominated by a low-diversity, opportunistic fauna indicating ongoing colonization of massive sand-bed deposits. PMID:25515588

Unexpected biotic resilience on the Japanese seafloor caused by the 2011 Tōhoku-Oki tsunami.

PubMed

Toyofuku, Takashi; Duros, Pauline; Fontanier, Christophe; Mamo, Briony; Bichon, Sabrina; Buscail, Roselyne; Chabaud, Gérard; Deflandre, Bruno; Goubet, Sarah; Grémare, Antoine; Menniti, Christophe; Fujii, Minami; Kawamura, Kiichiro; Koho, Karoliina Annika; Noda, Atsushi; Namegaya, Yuichi; Oguri, Kazumasa; Radakovitch, Olivier; Murayama, Masafumi; de Nooijer, Lennart Jan; Kurasawa, Atushi; Ohkawara, Nina; Okutani, Takashi; Sakaguchi, Arito; Jorissen, Frans; Reichart, Gert-Jan; Kitazato, Hiroshi

2014-12-17

On March 11(th), 2011 the Mw 9.0 2011 Tōhoku-Oki earthquake resulted in a tsunami which caused major devastation in coastal areas. Along the Japanese NE coast, tsunami waves reached maximum run-ups of 40 m, and travelled kilometers inland. Whereas devastation was clearly visible on land, underwater impact is much more difficult to assess. Here, we report unexpected results obtained during a research cruise targeting the seafloor off Shimokita (NE Japan), shortly (five months) after the disaster. The geography of the studied area is characterized by smooth coastline and a gradually descending shelf slope. Although high-energy tsunami waves caused major sediment reworking in shallow-water environments, investigated shelf ecosystems were characterized by surprisingly high benthic diversity and showed no evidence of mass mortality. Conversely, just beyond the shelf break, the benthic ecosystem was dominated by a low-diversity, opportunistic fauna indicating ongoing colonization of massive sand-bed deposits.

Co-seismic slip, post-seismic slip, and largest aftershock associated with the 1994 Sanriku-haruka-oki, Japan, earthquake

NASA Astrophysics Data System (ADS)

Yagi, Yuji; Kikuchi, Masayuki; Nishimura, Takuya

2003-11-01

We analyzed continuous GPS data to investigate the spatio-temporal distribution of co-seismic slip, post-seismic slip, and largest aftershock associated with the 1994 Sanriku-haruka-oki, Japan, earthquake (Mw = 7.7). To get better resolution for co-seismic and post-seismic slip distribution, we imposed a weak constraint as a priori information of the co-seismic slip determined by seismic wave analyses. We found that the post-seismic slip during 100 days following the main-shock amount to as much moment release as the main-shock, and that the sites of co-seismic slip and post-seismic slip are partitioning on a plate boundary region in complimentary fashion. The major post-seismic slip was triggered by the mainshock in western side of the co-seismic slip, and the extent of the post-seismic slip is almost unchanged with time. It rapidly developed a shear stress concentration ahead of the slip area, and triggered the largest aftershock.

Aftereffects of Subduction-Zone Earthquakes: Potential Tsunami Hazards along the Japan Sea Coast.

PubMed

Minoura, Koji; Sugawara, Daisuke; Yamanoi, Tohru; Yamada, Tsutomu

2015-10-01

The 2011 Tohoku-Oki Earthquake is a typical subduction-zone earthquake and is the 4th largest earthquake after the beginning of instrumental observation of earthquakes in the 19th century. In fact, the 2011 Tohoku-Oki Earthquake displaced the northeast Japan island arc horizontally and vertically. The displacement largely changed the tectonic situation of the arc from compressive to tensile. The 9th century in Japan was a period of natural hazards caused by frequent large-scale earthquakes. The aseismic tsunamis that inflicted damage on the Japan Sea coast in the 11th century were related to the occurrence of massive earthquakes that represented the final stage of a period of high seismic activity. Anti-compressive tectonics triggered by the subduction-zone earthquakes induced gravitational instability, which resulted in the generation of tsunamis caused by slope failing at the arc-back-arc boundary. The crustal displacement after the 2011 earthquake infers an increased risk of unexpected local tsunami flooding in the Japan Sea coastal areas.

Solid State Research

DTIC Science & Technology

1999-02-23

pumped at frequencies up to 5.5 kHz (with 10-W pumping). At high pulse repetition rates the radius of the beam waist decreases to ~60 jum, owing to...1998) A 1.3-GHz SOI CMOS Test Chip for R. Berger Low-Power High -Speed Pulse W. G. Lyons Processing A. M. Soares IEEE J. Solid-State Circuits...Goodhue D. E. Mull J. M. Rossler Y. Royter C.G.Fonstad* /. Vac. Sei. Technol. Modeling the Microwave Impedance of High -Tc Long Josephson

Sociosexuality in mainland China.

PubMed

Zheng, Wei Jun; Zhou, Xu Dong; Wang, Xiao Lei; Hesketh, Therese

2014-04-01

The construct of sociosexuality or sociosexual orientation describes the extent to which people will have casual, uncommitted sexual relationships. The Sociosexual Orientation Inventory (SOI) has been used to measure sociosexuality in many countries, but not in China. The aims of this study were to explore sociosexuality in a cross-section of the Chinese adult population, to quantify sex differences in sociosexuality, and to examine the sociodemographic correlates and the impact of the high sex ratio. The study consisted of a cross-sectional survey using a self-completion questionnaire. It was administered to adults of reproductive age in three provinces: Zhejiang, Guizhou, and Yunnan. While questionnaires were received from 7,424 participants, total SOI scores could be computed only for the 4,645 (63 %) who completed all seven items of the SOI. The mean score for men and women combined was 21.0, very low compared with most other countries, indicating restricted sociosexuality. The men (n = 2,048) had a mean of 27, showing more restricted sociosexuality than in all other countries where the SOI has been used. Wealth was the strongest independent correlate of high (unrestricted) sociosexuality in men and women. The effect size for the difference between the sexes was moderate (Cohen's d = .64), and comparable to more developed countries, perhaps reflecting relative gender equality in contemporary China. Despite the very high sex ratio, which is theorized to lead to restricted sexuality, its influence was difficult to determine, since differences in sociosexuality between high and low sex ratio areas within this population were inconsistent.

Tomographic image via background subtraction using an x-ray projection image and a priori computed tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Jin; Yi Byongyong; Lasio, Giovanni

Kilovoltage x-ray projection images (kV images for brevity) are increasingly available in image guided radiotherapy (IGRT) for patient positioning. These images are two-dimensional (2D) projections of a three-dimensional (3D) object along the x-ray beam direction. Projecting a 3D object onto a plane may lead to ambiguities in the identification of anatomical structures and to poor contrast in kV images. Therefore, the use of kV images in IGRT is mainly limited to bony landmark alignments. This work proposes a novel subtraction technique that isolates a slice of interest (SOI) from a kV image with the assistance of a priori information frommore » a previous CT scan. The method separates structural information within a preselected SOI by suppressing contributions to the unprocessed projection from out-of-SOI-plane structures. Up to a five-fold increase in the contrast-to-noise ratios (CNRs) was observed in selected regions of the isolated SOI, when compared to the original unprocessed kV image. The tomographic image via background subtraction (TIBS) technique aims to provide a quick snapshot of the slice of interest with greatly enhanced image contrast over conventional kV x-ray projections for fast and accurate image guidance of radiation therapy. With further refinements, TIBS could, in principle, provide real-time tumor localization using gantry-mounted x-ray imaging systems without the need for implanted markers.« less

Reconstructing El Niño Southern Oscillation using data from ships' logbooks, 1815-1854. Part I: methodology and evaluation

NASA Astrophysics Data System (ADS)

Barrett, Hannah G.; Jones, Julie M.; Bigg, Grant R.

2018-02-01

The meteorological information found within ships' logbooks is a unique and fascinating source of data for historical climatology. This study uses wind observations from logbooks covering the period 1815 to 1854 to reconstruct an index of El Niño Southern Oscillation (ENSO) for boreal winter (DJF). Statistically-based reconstructions of the Southern Oscillation Index (SOI) are obtained using two methods: principal component regression (PCR) and composite-plus-scale (CPS). Calibration and validation are carried out over the modern period 1979-2014, assessing the relationship between re-gridded seasonal ERA-Interim reanalysis wind data and the instrumental SOI. The reconstruction skill of both the PCR and CPS methods is found to be high with reduction of error skill scores of 0.80 and 0.75, respectively. The relationships derived during the fitting period are then applied to the logbook wind data to reconstruct the historical SOI. We develop a new method to assess the sensitivity of the reconstructions to using a limited number of observations per season and find that the CPS method performs better than PCR with a limited number of observations. A difference in the distribution of wind force terms used by British and Dutch ships is found, and its impact on the reconstruction assessed. The logbook reconstructions agree well with a previous SOI reconstructed from Jakarta rain day counts, 1830-1850, adding robustness to our reconstructions. Comparisons to additional documentary and proxy data sources are provided in a companion paper.

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

NASA Astrophysics Data System (ADS)

Jain, Neeraj; Raj, Balwinder

2017-12-01

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity, short channel effects (SCEs), leakage currents, device variability and reliability etc. Nowadays, multigate structure has become the promising candidate to overcome these problems. SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs), because of its more effective gate-controlling capabilities. In this paper, our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length. Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility, electric field, electric potential, sub-threshold slope (SS), ON current (I on), OFF current (I off) and I on/I off ratio. The potential benefits of SOI FinFET at drain-to-source voltage, V DS = 0.05 V and V DS = 0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (A V), output conductance (g d), trans-conductance (g m), gate capacitance (C gg), and cut-off frequency (f T = g m/2πC gg) with spacer region variations.

Improved Starting Materials for Back-Illuminated Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2009-01-01

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

High-frequency seismic energy radiation from the 2003 Miyagi-Oki, JAPAN, earthquake (M7.0) as revealed from an envelope inversion analysis

NASA Astrophysics Data System (ADS)

Nakahara, H.

2003-12-01

The 2003 Miyagi-Oki earthquake (M 7.0) took place on May 26, 2003 in the subducting Pacific plate beneath northeastern Japan. The focal depth is around 70km. The focal mechanism is reverse type on a fault plane dipping to the west with a high angle. There was no fatality, fortunately. However, this earthquake caused more than 100 injures, 2000 collapsed houses, and so on. To the south of this focal area by about 50km, an interplate earthquake of M7.5, the Miyagi-Ken-Oki earthquake, is expected to occur in the near future. So the relation between this earthquake and the expected Miyagi-Ken-Oki earthquake attracts public attention. Seismic-energy distribution on earthquake fault planes estimated by envelope inversion analyses can contribute to better understanding of the earthquake source process. For moderate to large earthquakes, seismic energy in frequencies higher than 1 Hz is sometimes much larger than a level expected from the omega-squared model with source parameters estimated by lower-frequency analyses. Therefore, an accurate estimation of seismic energy in such high frequencies has significant importance on estimation of dynamic source parameters such as the seismic energy or the apparent stress. In this study, we execute an envelope inversion analysis based on the method by Nakahara et al. (1998) and clarify the spatial distribution of high-frequency seismic energy radiation on the fault plane of this earthquake. We use three-component sum of mean squared velocity seismograms multiplied by a density of earth medium, which is called envelopes here, for the envelope inversion analysis. Four frequency bands of 1-2, 2-4, 4-8, and 8-16 Hz are adopted. We use envelopes in the time window from the onset of S waves to the lapse time of 51.2 sec. Green functions of envelopes representing the energy propagation process through a scattering medium are calculated based on the radiative transfer theory, which are characterized by parameters of scattering attenuation and intrinsic absorption. We use the values obtained for the northeastern Japan (Sakurai, 1995). We assume the fault plane as follows: strike=193,a, dip=69,a, rake=87,a, length=30km, width=25km with referrence to a waveform inversion analysis in low-frequencies (e.g. Yagi, 2003). We divide this fault plane into 25 subfaults, each of which is a 5km x 5km square. Rupture velocity is assumed to be constant. Seismic energy is radiated from a point source as soon as the rupture front passes the center of each subfault. Time function of energy radiation is assumed as a box-car function. The amount of seismic energy from all the subfaults and site amplification factors for all the stations are estimated by the envelope inversion method. Rupture velocity and the duration time of a box-car function should be estimated by a grid search. Theoretical envelopes calculated with best-fit parameters generally fit to observed ones. The rupture velocity and duration time were estimated as 3.8 km/s and 1.6 sec, respectively. The high-frequency seismic energy was found to be radiated mainly from two spots on the fault plane: The first one is around the initial rupture point and the second is the northern part of the fault plane. These two spots correspond to observed two peaks on envelopes. Amount of seismic energy increases with increasing frequency in the 1-16Hz band, which contradicts an expectation from the omega-squared model. Therefore, stronger radiation of higher-frequency seismic energy is a prominent character of this earthquake. Acknowledgements: We used strong-motion seismograms recorded by the K-NET and KiK-net of NIED, JAPAN.

A review of the rupture characteristics of the 2011 Tohoku-oki Mw 9.1 earthquake

NASA Astrophysics Data System (ADS)

Lay, Thorne

2018-05-01

The 2011 March 11 Tohoku-oki great (Mw 9.1) earthquake ruptured the plate boundary megathrust fault offshore of northern Honshu with estimates of shallow slip of 50 m and more near the trench. Non-uniform slip extended 220 km across the width and 400 km along strike of the subduction zone. Extensive data provided by regional networks of seismic and geodetic stations in Japan and global networks of broadband seismic stations, regional and global ocean bottom pressure sensors and sea level measurement stations, seafloor GPS/Acoustic displacement sites, repeated multi-channel reflection images, extensive coastal runup and inundation observations, and in situ sampling of the shallow fault zone materials and temperature perturbation, make the event the best-recorded and most extensively studied great earthquake to date. An effort is made here to identify the more robust attributes of the rupture as well as less well constrained, but likely features. Other issues involve the degree to which the rupture corresponded to geodetically-defined preceding slip-deficit regions, the influence of re-rupture of slip regions for large events in the past few centuries, and relationships of coseismic slip to precursory slow slip, foreshocks, aftershocks, afterslip, and relocking of the megathrust. Frictional properties associated with the slip heterogeneity and in situ measurements of frictional heating of the shallow fault zone support low stress during shallow sliding and near-total shear stress drop of 10-30 MPa in large-slip regions in the shallow megathrust. The roles of fault morphology, sediments, fluids, and dynamical processes in the rupture behavior continue to be examined; consensus has not yet been achieved. The possibility of secondary sources of tsunami excitation such as inelastic deformation of the sedimentary wedge or submarine slumping remains undemonstrated; dislocation models in an elastic continuum appear to sufficiently account for most mainshock observations, although afterslip and viscoelastic processes remain contested.

Proceedings of the 1996 Space Surveillance Workshop Held in Lexington, Massachusetts on 2-4 April 1996. Volume 1,

DTIC Science & Technology

1996-04-04

of multi-spectral SOI data. These spectra are for blue (B), visible (V), red (R) and infrared (I). Broadband SOI can also be collected in the open...the etalon is of order 200nm with a finesse of order 20, three spectral channels in blue , red and near-IR can be created and separated using a low...References 1 Lincoln Labs. J. 5 (1992) Nol. 2 Laser Guide Star Adaptive Optics Workshop, Vols 1&2, R Q Fugate (Ed), SOR, Phillips Lab/LITE

Insulator photocurrents: Application to dose rate hardening of CMOS/SOI integrated circuits

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dupont-Nivet, E.; Coiec, Y.M.; Flament, O.

1998-06-01

Irradiation of insulators with a pulse of high energy x-rays can induce photocurrents in the interconnections of integrated circuits. The authors present, here, a new method to measure and analyze this effect together with a simple model. They also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. They show that it explains some of the upsets observed in a SRAM embedded in an ASIC.

Common Capabilities for Trust and Security in Service Oriented Infrastructures

NASA Astrophysics Data System (ADS)

Brossard, David; Colombo, Maurizio

In order to achieve agility of the enterprise and shorter concept-to-market timescales for new services, IT and communication providers and their customers increasingly use technologies and concepts which come together under the banner of the Service Oriented Infrastructure (SOI) approach. In this paper we focus on the challenges relating to SOI security. The solutions presented cover the following areas: i) identity federation, ii) distributed usage & access management, and iii) context-aware secure messaging, routing & transformation. We use a scenario from the collaborative engineering space to illustrate the challenges and the solutions.

Seismicity and state of stress near the Japan Trench axis off Miyagi, northeast Japan, after the 2011 Tohoku-Oki earthquake

NASA Astrophysics Data System (ADS)

Obana, K.; Kodaira, S.; Takahashi, T.; Yamamoto, Y.; Nakamura, Y.; No, T.; Fujie, G.; Hino, R.; Shinohara, M.

2013-12-01

The 2011 Tohoku-Oki earthquake ruptured roughly 200 km wide and 500 km long megathrust along the Japan Trench. The rupture propagated to the trench axis with a maximum slip about 50 m near the trench axis. As a consequence of this large near-trench slip, earthquakes have been activated near the axis of the Japan Trench off Miyagi, northeast Japan. We have conducted ocean bottom seismograph (OBS) experiments in the Japan Trench axis area, surrounding area of the IODP JFAST drilling site, since the occurrence of the 2011 Tohoku-Oki earthquake. Although conventionally used OBS cannot be deployed at seafloor deeper than 6000 m water depth, we used newly developed ultra-deep OBS using ceramic sphere, which can be deployed at a depth of 9000 m, for the observations in the trench axis. The ultra-deep OBS has almost equivalent dimensions and weight with the conventionally used OBS, thus we can handle it in the same manner with the conventionally OBS without any special operation. As a result of a series of the OBS observations, we obtained accurate hypocenter locations and focal mechanisms in both seaward and landward of the trench axis. Earthquakes near the trench axis area were located within the overriding and incoming/subducting plates with very few on the plate interface below the inner trench slope landward of the trench axis. Most of the earthquakes both in the overriding and incoming/subducting plates having normal or strike-slip faulting focal mechanisms with T-axis normal to the trench axis. This indicates that tensional stress is dominant in the trench axis area. However, most seaward part of the seismicity within the overriding plate is characterized by a localized cluster of trench-normal compressional earthquakes, which may relate to spatial variation of the frictional behavior of the shallowest part of the megathrust. On the other hand, trench-normal extensional earthquakes in the incoming/subducting Pacific plate were located at depths shallower than about 35 to 40 km. The deepest trench-normal extensional earthquake observed during OBS observations from December 2012 to January 2013 is slightly shallower than that observed from May to June in 2011 but further observations are required to investigate the temporal change. Continued and repeated earthquake observations could provide information on post-seismic behavior of the megathrust and recovery process of the stress state.

Wide-Temperature-Range Integrated Operational Amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Levanas, Greg; Chen, Yuan; Kolawa, Elizabeth; Cozy, Raymond; Blalock, Benjamin; Greenwell, Robert; Terry, Stephen

2007-01-01

A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

Is the Oceanography of the New Zealand Subantarctic Region Responding to the Tropics?

NASA Astrophysics Data System (ADS)

Forcen-Vazquez, A. N.

2016-02-01

The Campbell Plateau, south of New Zealand plays an important role in New Zealand's regional climate and its oceanography may have a significant impact on fluctuations in fish stocks and marine mammal populations. It is located between the Subtropical and Subantarctic Fronts and exhibits marked variability over long time scales. It has been previously assumed, because of its location, that the Campbell Plateau oceanography is driven by Subantarctic and polar processes. Recent analysis, presented here, suggests this in not the case, and instead forcing comes from the tropics and subtropics. This is supported by positive correlations of Sea Level Anomalies (SLA) and Sea Surface Temperature (SST) with the Southern Oscillation Index (SOI) with SOI leading changes on the Campbell Plateau by two months for SLA and seven months for SST. Here we will present evidence of the similarity between the Campbell Plateau and the Tasman Sea SLA trends which suggests a closer relationship with the subtropical region. Satellite collected SLA data and SST from the last two decades are investigated to understand trends and long-term variability over the Campbell Plateau and its relationship with the surrounding open ocean, and other potential remote drivers of variability.

Heterojunction fully depleted SOI-TFET with oxide/source overlap

NASA Astrophysics Data System (ADS)

Chander, Sweta; Bhowmick, B.; Baishya, S.

2015-10-01

In this work, a hetero-junction fully depleted (FD) Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET) nanostructure with oxide overlap on the Germanium-source region is proposed. Investigations using Synopsys Technology Computer Aided Design (TCAD) simulation tools reveal that the simple oxide overlap on the Germanium-source region increases the tunneling area as well as the tunneling current without degrading the band-to-band tunneling (BTBT) and improves the device performance. More importantly, the improvement is independent of gate overlap. Simulation study shows improvement in ON current, subthreshold swing (SS), OFF current, ION/IOFF ration, threshold voltage and transconductance. The proposed device with hafnium oxide (HfO2)/Aluminium Nitride (AlN) stack dielectric material offers an average subthreshold swing of 22 mV/decade and high ION/IOFF ratio (∼1010) at VDS = 0.4 V. Compared to conventional TFET, the Miller capacitance of the device shows the enhanced performance. The impact of the drain voltage variation on different parameters such as threshold voltage, subthreshold swing, transconductance, and ION/IOFF ration are also found to be satisfactory. From fabrication point of view also it is easy to utilize the existing CMOS process flows to fabricate the proposed device.

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

2016-10-01

A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crowder, M.A.; Sposili, R.S.; Cho, H.S.

Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFT`s) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFT`s exhibit properties and a level of performance that are superior to polycrystalline Si-based TFT`s and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. The authors attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT`s.

Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics

NASA Astrophysics Data System (ADS)

Durel, Jocelyn; Ferrotti, Thomas; Chantre, Alain; Cremer, Sébastien; Harduin, Julie; Bernabé, Stéphane; Kopp, Christophe; Boeuf, Frédéric; Ben Bakir, Badhise; Broquin, Jean-Emmanuel

2016-02-01

In this paper, the simulation, design and fabrication of a back-side coupling (BSC) concept for silicon photonics, which targets heterogeneous hybrid III-V/Si laser integration is presented. Though various demonstrations of a complete SOI integration of passive and active photonic devices have been made, they all feature multi-level planar metal interconnects, and a lack of integrated light sources. This is mainly due to the conflict between the need of planar surfaces for III-V/Si bonding and multiple levels of metallization. The proposed BSC solution to this topographical problem consists in fabricating lasers on the back-side of the Si waveguides using a new process sequence. The devices are based on a hybrid structure composed of an InGaAsP MQW active area and a Si-based DBR cavity. The emitted light wavelength is accordable within a range of 20 nm around 1.31μm thanks to thermal heaters and the laser output is fiber coupled through a Grating Coupler (GC). From a manufacturing point of view, the BSC approach provides not only the advantages of allowing the use of a thin-BOX SOI instead of a thick one; but it also shifts the laser processing steps and their materials unfriendly to CMOS process to the far back-end areas of fabrication lines. Moreover, aside from solving technological integration issues, the BSC concept offers several new design opportunities for active and passive devices (heat sink, Bragg gratings, grating couplers enhanced with integrated metallic mirrors, tapers…). These building boxes are explored here theoretically and experimentally.

Disc resonator gyroscope fabrication process requiring no bonding alignment

NASA Technical Reports Server (NTRS)

Shcheglov, Kirill V. (Inventor)

2010-01-01

A method of fabricating a resonant vibratory sensor, such as a disc resonator gyro. A silicon baseplate wafer for a disc resonator gyro is provided with one or more locating marks. The disc resonator gyro is fabricated by bonding a blank resonator wafer, such as an SOI wafer, to the fabricated baseplate, and fabricating the resonator structure according to a pattern based at least in part upon the location of the at least one locating mark of the fabricated baseplate. MEMS-based processing is used for the fabrication processing. In some embodiments, the locating mark is visualized using optical and/or infrared viewing methods. A disc resonator gyroscope manufactured according to these methods is described.

A study of the total atmospheric sulfur dioxide load using ground-based measurements and the satellite derived Sulfur Dioxide Index

NASA Astrophysics Data System (ADS)

Georgoulias, A. K.; Balis, D.; Koukouli, M. E.; Meleti, C.; Bais, A.; Zerefos, C.

We present characteristics of the sulfur dioxide (SO 2) loading over Thessaloniki, Greece, and seven other selected sites around the world using SO 2 total column measurements from Brewer spectrophotometers together with satellite estimates of the Version 8 TOMS Sulfur Dioxide Index (SOI) over the same locations, retrieved from Nimbus 7 TOMS (1979-1993), Earth Probe TOMS (1996-2003) and OMI/Aura (2004-2006). Traditionally, the SOI has been used to quantify the SO 2 quantities emitted during great volcanic eruptions. Here, we investigate whether the SOI can give an indication of the total SO 2 load for areas and periods away from eruptive volcanic activity by studying its relative changes as a correlative measure to the SO 2 total column. We examined time series from Thessaloniki and another seven urban and non-urban stations, five in the European Union (Arosa, De Bilt, Hohenpeissenberg, Madrid, Rome) and two in India (Kodaikanal, New Delhi). Based on the Brewer data, Thessaloniki shows high SO 2 total columns for a European Union city but values are still low if compared to highly affected regions like those in India. For the time period 1983-2006 the SO 2 levels above Thessaloniki have generally decreased with a rate of 0.028 Dobson Units (DU) per annum, presumably due to the European Union's strict sulfur control policies. The seasonal variability of the SO 2 total column exhibits a double peak structure with two maxima, one during winter and the second during summer. The winter peak can be attributed to central heating while the summer peak is due to synoptic transport from sources west of the city and sources in the north of Greece. A moderate correlation was found between the seasonal levels of Brewer total SO 2 and SOI for Thessaloniki, Greece ( R = 0.710-0.763) and Madrid, Spain ( R = 0.691) which shows that under specific conditions the SOI might act as an indicator of the SO 2 total load.

Modulation of the SSTA decadal variation on ENSO events and relationships of SSTA With LOD,SOI, etc

NASA Astrophysics Data System (ADS)

Liao, D. C.; Zhou, Y. H.; Liao, X. H.

2007-01-01

Interannual and decadal components of the length of day (LOD), Southern Oscillation Index (SOI) and Sea Surface Temperature anomaly (SSTA) in Nino regions are extracted by band-pass filtering, and used for research of the modulation of the SSTA on the ENSO events. Results show that besides the interannual components, the decadal components in SSTA have strong impacts on monitoring and representing of the ENSO events. When the ENSO events are strong, the modulation of the decadal components of the SSTA tends to prolong the life-time of the events and enlarge the extreme anomalies of the SST, while the ENSO events, which are so weak that they can not be detected by the interannual components of the SSTA, can also be detected with the help of the modulation of the SSTA decadal components. The study further draws attention to the relationships of the SSTA interannual and decadal components with those of LOD, SOI, both of the sea level pressure anomalies (SLPA) and the trade wind anomalies (TWA) in tropic Pacific, and also with those of the axial components of the atmospheric angular momentum (AAM) and oceanic angular momentum (OAM). Results of the squared coherence and coherent phases among them reveal close connections with the SSTA and almost all of the parameters mentioned above on the interannual time scales, while on the decadal time scale significant connections are among the SSTA and SOI, SLPA, TWA, ?3w and ?3w+v as well, and slight weaker connections between the SSTA and LOD, ?3pib and ?3bp

SOI CMOS Imager with Suppression of Cross-Talk

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

2009-01-01

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Insulin-like growth factor I gene polymorphism associated with growth and carcass traits in Thai synthetic chickens.

PubMed

Promwatee, N; Laopaiboon, B; Vongpralub, T; Phasuk, Y; Kunhareang, S; Boonkum, W; Duangjinda, M

2013-03-15

Four Thai synthetic chicken lines (Kaen Thong, Khai Mook Esarn, Soi Nin, and Soi Pet) originated from Thai native and exotic commercial chickens were evaluated for their growth and carcass traits with the purpose of developing a Thai broiler breeding program. Insulin-like growth factor I (IGF-I) gene is known to play an important role in growth, proliferation and differentiation. Consequently, we investigated the possibility of using the IGF-I gene for marker-assisted selection in Thai synthetic chickens. We looked for variations in the IGF-I gene and studied their association with growth and carcass traits; 1046 chickens were genotyped using PCR-RFLP methods. A general linear model was used to analyze associations of the IGF-I polymorphism with growth and carcass traits. Kaen Thong, Khai Mook Esarn, and Soi Nin chickens were found to carry similar frequencies of alleles A and C (0.40-0.60), while Soi Pet chickens had high frequencies of allele C (0.75). The IGF-I gene was significantly associated with some growth traits (body weight at hatching, and at 4, 8, 12, and 14 weeks of age; average daily gain during 0-12 and 0-14 weeks of age) in all synthetic chickens. Carcass traits (the percentage of dressing and pectoralis major) were significantly different only in Khai Mook Esarn chickens. We conclude that IGF-I can be used as a marker gene for the selection of growth and carcass traits of synthetic chickens in a marker-assisted selection program.

The influence of the La Niña-El Niño cycle on giant mud crab (Scylla serrata) catches in Northern Australia

NASA Astrophysics Data System (ADS)

Meynecke, Jan-Olaf; Grubert, Mark; Arthur, James Michael; Boston, Ray; Lee, Shing Yip

2012-03-01

Mud crabs (Scylla spp.) are a high value commodity harvested in the Indo-West Pacific. Scylla species support important artisanal fisheries in south-east Asia and intensive commercial fisheries in Australia where the market demand and catch has increased markedly over the last decade. Over-fishing of Scylla spp. has been observed at varying levels throughout its distribution. Fluctuations in catch rates and abundance are thought to be driven by climate parameters. Here we analyse monthly, seasonal and annual patterns in catch and effort data (from 1990 to 2008) for the commercial giant mud crab (Scylla serrata) fishery in the Northern Territory, Australia, with corresponding climatic data (rainfall, freshwater runoff, sea surface temperature) and the Southern Oscillation Index (SOI) as an indicator of La Niña/El Niño events. Between 30 and 40% of the variation in catch per unit effort can be explained by rainfall and SOI alone. This result was supported by linear mixed models which identified SOI as the main contributor to the model. Spectral analyses showed that catch peaks coincided with a four year La Niña cycle. One- and two-year time lags (consistent with S. Serrata's life cycle) were also significantly correlated to SOI values and rainfall. These outcomes may assist fishery managers in planning fishing exposure period and duration. Furthermore, findings of this study provide information on the vulnerability of S. serrata to fluctuations in environmental conditions and can help to apply protective measures when and where necessary.

Performance study of double SOI image sensors

NASA Astrophysics Data System (ADS)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

Improvements in Fabrication of 3D SU-8 Prisms for Low-Coupling-Loss Interconnections Between Fibers and Waveguides

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hang; Chu, Thi-Xuan; Nguyen, Long; Nguyen, Hai-Binh; Lee, Chun-Wei; Tseng, Fan-Gang; Chen, Te-Chang; Lee, Ming-Chang

2016-11-01

Fabrication of three-dimensional (3D) SU-8 (an epoxy-based negative photoresist from MicroChem) prisms as low-loss couplers for interconnection between optical components, particularly optical fibers and silicon-on-isolator waveguides (SOI WGs), which have mismatched mode sizes, has been investigated. With an interfacial structure formed by a 3D SU-8 prism partly overlaying an SOI WG end with a portion of buried oxide (BOX) removed under the interface, low-loss coupling is ensured and the transmission efficiency can reach 70%. To fabricate these 3D SU-8 prisms, a simple method with two photolithography steps was used for SU-8 hinges and CYTOP (an amorphous fluoropolymer from AGC Chemicals) prism windows, with mild soft and hard bakes, to define the prism profiles with diluted SU-8 filled in the CYTOP prism windows. A buffered oxide etchant is used to remove BOX parts under the interfaces. Some of the fabricated structures were tested, demonstrating the contribution of overlaying SU-8 prisms to the transmission efficiency of optical interconnections between fibers and SOI WGs.

Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor

NASA Technical Reports Server (NTRS)

Tu, Juliana; Smith, Rosemary L.

1995-01-01

The objective of this project was to design, fabricate, and test single crystal silicon filaments as potential black body IR sources for a spectrophotometric CO2 sensing microsystem. The design and fabrication of the silicon-on-insulator (SOI) filaments are summarized and figures showing the composite layout of the filament die (which contains four filaments of different lengths -- 500 microns, 1 mm, 1.5 mm and 2 mm -- and equal widths of 15 microns) are presented. The composite includes four mask layers: (1) silicon - defines the filament dimensions and contact pads; (2) release pit - defines the oxide removed from under the filament and hence, the length of the released filament; (3) Pyrex pit - defines the pit etched in the Pyrex cap (not used); and (4) metal - defines a metal pattern on the contact pads or used as a contact hole etch. I/V characteristics testing of the fabricated SOI filaments is described along with the nitride-coating procedures carried out to prevent oxidation and resistance instability.

Effects of substrate voltage on noise characteristics and hole lifetime in SOI metal-oxide-semiconductor field-effect transistor photon detector.

PubMed

Putranto, Dedy Septono Catur; Priambodo, Purnomo Sidi; Hartanto, Djoko; Du, Wei; Satoh, Hiroaki; Ono, Atsushi; Inokawa, Hiroshi

2014-09-08

Low-frequency noise and hole lifetime in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) are analyzed, considering their use in photon detection based on single-hole counting. The noise becomes minimum at around the transition point between front- and back-channel operations when the substrate voltage is varied, and increases largely on both negative and positive sides of the substrate voltage showing peculiar Lorentzian (generation-recombination) noise spectra. Hole lifetime is evaluated by the analysis of drain current histogram at different substrate voltages. It is found that the peaks in the histogram corresponding to the larger number of stored holes become higher as the substrate bias becomes larger. This can be attributed to the prolonged lifetime caused by the higher electric field inside the body of SOI MOSFET. It can be concluded that, once the inversion channel is induced for detection of the photo-generated holes, the small absolute substrate bias is favorable for short lifetime and low noise, leading to high-speed operation.

Spin precession in spin-orbit coupled weak links: Coulomb repulsion and Pauli quenching

NASA Astrophysics Data System (ADS)

Shekhter, R. I.; Entin-Wohlman, O.; Jonson, M.; Aharony, A.

2017-12-01

A simple model for the transmission of pairs of electrons through a weak electric link in the form of a nanowire made of a material with strong electron spin-orbit interaction (SOI) is presented, with emphasis on the effects of Coulomb interactions and the Pauli exclusion principle. The constraints due to the Pauli principle are shown to "quench" the coherent SOI-induced precession of the spins when the spatial wave packets of the two electrons overlap significantly. The quenching, which results from the projection of the pair's spin states onto spin-up and spin-down states on the link, breaks up the coherent propagation in the link into a sequence of coherent hops that add incoherently. Applying the model to the transmission of Cooper pairs between two superconductors, we find that in spite of Pauli quenching, the Josephson current oscillates with the strength of the SOI, but may even change its sign (compared to the limit of the Coulomb blockade, when the quenching is absent). Conditions for an experimental detection of these features are discussed.

The founder of the Friends Foundation--Tessie Soi.

PubMed

Topurua, Ore

2013-01-01

Tessie Soi is well known in Papua New Guinea and beyond for her work with HIV/AIDS (human immunodeficiency virus/acquired immune deficiency syndrome) patients, including through the Friends Foundation, an organization that focuses on helping families affected by HIV and AIDS. This article explores Tessie's early life and childhood, providing insight into some of the values she learned from her parents. Providing details about the Friends Foundation and the Orphan Buddy Systems program, a program Tessie established to support AIDS orphans, the article offers insight into Tessie's beliefs and compassion, simultaneously highlighting the value she places on her family.

Analysis of silicon on insulator (SOI) optical microring add-drop filter based on waveguide intersections

NASA Astrophysics Data System (ADS)

Kaźmierczak, Andrzej; Bogaerts, Wim; Van Thourhout, Dries; Drouard, Emmanuel; Rojo-Romeo, Pedro; Giannone, Domenico; Gaffiot, Frederic

2008-04-01

We present a compact passive optical add-drop filter which incorporates two microring resonators and a waveguide intersection in silicon-on-insulator (SOI) technology. Such a filter is a key element for designing simple layouts of highly integrated complex optical networks-on-chip. The filter occupies an area smaller than 10μm×10μm and exhibits relatively high quality factors (up to 4000) and efficient signal dropping capabilities. In the present work, the influence of filter parameters such as the microring-resonators radii and the coupling section shape are analyzed theoretically and experimentally

Polarization anisotropy for monitoring seismogenic and volcanic zones- application to Mount Fuji at the time of the 2011 Tohoku earthquake

NASA Astrophysics Data System (ADS)

Saade, Maria; Montagner, Jean-Paul; Araragi, Kohtaro; Roux, Philippe; Brenguier, Florent

2017-04-01

In active regions (seismogenic and volcanic zones), the polarization of surface waves is mainly related to seismic anisotropy. It can be derived by using seismic interferometry. We use continuous data recorded in the area around Mount Fuji, covering the year 2011 in which the Tohoku-Oki earthquake, Japan (Mw=9.0) occurred. Previously, seismic velocity measurements done using cross-correlations of seismic noise, revealed that the Tohoku-Oki earthquake also affected the velocity structure of volcanic zones such as the Mount Fuji area (Brenguier et al. 2014). In fact, seismic velocity dropped by 0.1% in the shallow depth (<10km) underneath the area of Mount Fuji due to the high sensitivity of the volcanic crust and the presence of pressurized fluids in the volcanic fissures. Results of this study show that the orientation of seismic anisotropy has significantly changed at the time of the earthquake inducing strong and rapid deviations of the horizontal polarization of surface waves. These changes might be due to a change in the alignment of cracks when subject to a co-seismic stress perturbation.

Infrasonic sounds excited by seismic waves of the 2011 Tohoku-oki earthquake as visualized in ionograms

NASA Astrophysics Data System (ADS)

Maruyama, Takashi; Shinagawa, Hiroyuki

2014-05-01

After the M 9.0 Tohoku-oki earthquake in 2011, strong deformation of ionogram echo traces, forming multiple cusp signatures (MCSs), were observed at three stations 790-1880 km from the epicenter. The vertical structure of the ionospheric disturbances was determined by true height analysis and compared with broadband seismograph records at stations close to the ionosondes. These ionospheric disturbances were caused by vertically propagating acoustic waves excited by the up/down ground motion of seismic waves. Numerical simulations have shown that acoustic waves with a period of 15-40 s and amplitude of order 1 mm/s at the ground level were sufficient to create MCSs as sharp as those observed. These acoustic wave parameters are consistent with the seismic records if the motion of the air mass on the ground level is assumed to be the same as the ground motion. The travel time diagram of the seismic records along the line connecting the epicenter and ionosondes showed that the first MCS ionogram detected at each station was caused by P waves, while the others were caused by Rayleigh waves.

Jet Stream Converges Prior to 6.8M Niigata Chuetsu-oki Earthquake of Japan on 2007/07/16

NASA Astrophysics Data System (ADS)

Wu, H.

2007-12-01

The 6.8M Niigata Chuetsu-oki earthquake occurred on 2007/07/16 and resulted in 11 deaths and at least 1000 injuries have been reported, and 342 buildings were completely destroyed. The 108km/hr isobar jet stream line converged around an epicenter on 2007/07/01 12:00 and 2007/07/02 06:00. Before a devastating earthquake occurs, the underground water level usually changes caused by the rock squishing or loosening. This study assumed that rock squishing or loosening caused air inhalation or exhalation that creates an internal gravity wave. This phenomenon will change the jet streams at an altitude of 10 km. Ps. The predicted Data:07/06/26-07/07/26 Japan(37.4N140.0E)M 6.0 100% The Actual Data: 07/07/16 Japan (37.576N138.469E) 6.6M 10km This earthquake prediction had been predicted on http://tw.myblog.yahoo.com/wu10002002/ and sent to Dr. Dimitar Ouzounov in advance.

Broadscale Postseismic Gravity Change Following the 2011 Tohoku-Oki Earthquake and Implication for Deformation by Viscoelastic Relaxation and Afterslip

NASA Technical Reports Server (NTRS)

Han, Shin-Chan; Sauber, Jeanne; Pollitz, Fred

2014-01-01

The analysis of GRACE gravity data revealed post-seismic gravity increase by 6 micro-Gal over a 500 km scale within a couple of years after the 2011 Tohoku-Oki earthquake, which is nearly 40-50% of the co-seismic gravity change. It originates mostly from changes in the isotropic component corresponding to the M(sub rr) moment tensor element. The exponential decay with rapid change in a year and gradual change afterward is a characteristic temporal pattern. Both viscoelastic relaxation and afterslip models produce reasonable agreement with the GRACE free-air gravity observation, while their Bouguer gravity patterns and seafloor vertical deformations are distinctly different. The post-seismic gravity variation is best modeled by the bi-viscous relaxation with a transient and steady state viscosity of 10(exp 18) and 10(exp 19) Pa s, respectively, for the asthenosphere. Our calculated higher-resolution viscoelastic relaxation model, underlying the partially ruptured elastic lithosphere, yields the localized post-seismic subsidence above the hypocenter reported from the GPS-acoustic seafloor surveying.

Temporal Stress Changes Caused by Earthquakes: A Review

NASA Astrophysics Data System (ADS)

Hardebeck, Jeanne L.; Okada, Tomomi

2018-02-01

Earthquakes can change the stress field in the Earth's lithosphere as they relieve and redistribute stress. Earthquake-induced stress changes have been observed as temporal rotations of the principal stress axes following major earthquakes in a variety of tectonic settings. The stress changes due to the 2011 Mw9.0 Tohoku-Oki, Japan, earthquake were particularly well documented. Earthquake stress rotations can inform our understanding of earthquake physics, most notably addressing the long-standing problem of whether the Earth's crust at plate boundaries is "strong" or "weak." Many of the observed stress rotations, including that due to the Tohoku-Oki earthquake, indicate near-complete stress drop in the mainshock. This implies low background differential stress, on the order of earthquake stress drop, supporting the weak crust model. Earthquake stress rotations can also be used to address other important geophysical questions, such as the level of crustal stress heterogeneity and the mechanisms of postseismic stress reloading. The quantitative interpretation of stress rotations is evolving from those based on simple analytical methods to those based on more sophisticated numerical modeling that can capture the spatial-temporal complexity of the earthquake stress changes.

Joint numerical study of the 2011 Tohoku-Oki tsunami: comparative propagation simulations and high resolution coastal models

NASA Astrophysics Data System (ADS)

Loevenbruck, Anne; Arpaia, Luca; Ata, Riadh; Gailler, Audrey; Hayashi, Yutaka; Hébert, Hélène; Heinrich, Philippe; Le Gal, Marine; Lemoine, Anne; Le Roy, Sylvestre; Marcer, Richard; Pedreros, Rodrigo; Pons, Kevin; Ricchiuto, Mario; Violeau, Damien

2017-04-01

This study is part of the joint actions carried out within TANDEM (Tsunamis in northern AtlaNtic: Definition of Effects by Modeling). This French project, mainly dedicated to the appraisal of coastal effects due to tsunami waves on the French coastlines, was initiated after the catastrophic 2011 Tohoku-Oki tsunami. This event, which tragically struck Japan, drew the attention to the importance of tsunami risk assessment, in particular when nuclear facilities are involved. As a contribution to this challenging task, the TANDEM partners intend to provide guidance for the French Atlantic area based on numerical simulation. One of the identified objectives consists in designing, adapting and validating simulation codes for tsunami hazard assessment. Besides an integral benchmarking workpackage, the outstanding database of the 2011 event offers the TANDEM partners the opportunity to test their numerical tools with a real case. As a prerequisite, among the numerous published seismic source models arisen from the inversion of the various available records, a couple of coseismic slip distributions have been selected to provide common initial input parameters for the tsunami computations. After possible adaptations or specific developments, the different codes are employed to simulate the Tohoku-Oki tsunami from its source to the northeast Japanese coastline. The results are tested against the numerous tsunami measurements and, when relevant, comparisons of the different codes are carried out. First, the results related to the oceanic propagation phase are compared with the offshore records. Then, the modeled coastal impacts are tested against the onshore data. Flooding at a regional scale is considered, but high resolution simulations are also performed with some of the codes. They allow examining in detail the runup amplitudes and timing, as well as the complexity of the tsunami interaction with the coastal structures. The work is supported by the Tandem project in the frame of French PIA grant ANR-11-RSNR-00023.

Sendai-Okura earthquake swarm induced by the 2011 Tohoku-Oki earthquake in the stress shadow of NE Japan: Detailed fault structure and hypocenter migration

NASA Astrophysics Data System (ADS)

Yoshida, Keisuke; Hasegawa, Akira

2018-05-01

We investigated the distribution and migration of hypocenters of an earthquake swarm that occurred in Sendai-Okura (NE Japan) 15 days after the 2011 M9.0 Tohoku-Oki earthquake, despite the decrease in shear stress due to the static stress change. Hypocenters of 2476 events listed in the JMA catalogue were relocated based on the JMA unified catalogue data in conjunction with data obtained by waveform cross correlation. Hypocenter relocation was successful in delineating several thin planar structures, although the original hypocenters presented a cloud-like distribution. The hypocenters of this swarm event migrated along several planes from deeper to shallower levels rather than diffusing three-dimensionally. One of the nodal planes of the focal mechanisms was nearly parallel to the planar structure of the hypocenters, supporting the idea that each earthquake occurred by causing slip on parts of the same plane. The overall migration velocity of the hypocenters could be explained by the fluid diffusion model with a typical value of hydraulic diffusivity (0.15 m2/s); however, the occurrence of some burst-like activity with much higher migration velocity suggests the possibility that aseismic slip also contributed to triggering the earthquakes. We suggest that the 2011 Sendai-Okura earthquake swarm was generated as follows. (1) The 2011 Tohoku-Oki earthquake caused WNW-ESE extension in the focal region of the swarm, which accordingly reduced shear stress on the fault planes. However, the WNW-ESE extension allowed fluids to move upward from the S-wave reflectors in the mid-crust immediately beneath the focal region. (2) The fluids rising from the mid-crust intruded into several existing planes, which reduced their frictional strengths and caused the observed earthquake swarm. (3) The fluids, and accordingly, the hypocenters of the triggered earthquakes, migrated upward along the fault planes. It is possible that the fluids also triggered aseismic slip, which caused intermittent burst-like activity.

The modeling of MMI structures for signal processing applications

NASA Astrophysics Data System (ADS)

Le, Thanh Trung; Cahill, Laurence W.

2008-02-01

Microring resonators are promising candidates for photonic signal processing applications. However, almost all resonators that have been reported so far use directional couplers or 2×2 multimode interference (MMI) couplers as the coupling element between the ring and the bus waveguides. In this paper, instead of using 2×2 couplers, novel structures for microring resonators based on 3×3 MMI couplers are proposed. The characteristics of the device are derived using the modal propagation method. The device parameters are optimized by using numerical methods. Optical switches and filters using Silicon on Insulator (SOI) then have been designed and analyzed. This device can become a new basic component for further applications in optical signal processing. The paper concludes with some further examples of photonic signal processing circuits based on MMI couplers.

A 60 GOPS/W, -1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology

NASA Astrophysics Data System (ADS)

Rossi, Davide; Pullini, Antonio; Loi, Igor; Gautschi, Michael; Gürkaynak, Frank K.; Bartolini, Andrea; Flatresse, Philippe; Benini, Luca

2016-03-01

Ultra-low power operation and extreme energy efficiency are strong requirements for a number of high-growth application areas, such as E-health, Internet of Things, and wearable Human-Computer Interfaces. A promising approach to achieve up to one order of magnitude of improvement in energy efficiency over current generation of integrated circuits is near-threshold computing. However, frequency degradation due to aggressive voltage scaling may not be acceptable across all performance-constrained applications. Thread-level parallelism over multiple cores can be used to overcome the performance degradation at low voltage. Moreover, enabling the processors to operate on-demand and over a wide supply voltage and body bias ranges allows to achieve the best possible energy efficiency while satisfying a large spectrum of computational demands. In this work we present the first ever implementation of a 4-core cluster fabricated using conventional-well 28 nm UTBB FD-SOI technology. The multi-core architecture we present in this work is able to operate on a wide range of supply voltages starting from 0.44 V to 1.2 V. In addition, the architecture allows a wide range of body bias to be applied from -1.8 V to 0.9 V. The peak energy efficiency 60 GOPS/W is achieved at 0.5 V supply voltage and 0.5 V forward body bias. Thanks to the extended body bias range of conventional-well FD-SOI technology, high energy efficiency can be guaranteed for a wide range of process and environmental conditions. We demonstrate the ability to compensate for up to 99.7% of chips for process variation with only ±0.2 V of body biasing, and compensate temperature variation in the range -40 °C to 120 °C exploiting -1.1 V to 0.8 V body biasing. When compared to leading-edge near-threshold RISC processors optimized for extremely low power applications, the multi-core architecture we propose has 144× more performance at comparable energy efficiency levels. Even when compared to other low-power processors with comparable performance, including those implemented in 28 nm technology, our platform provides 1.4× to 3.7× better energy efficiency.

Crater relaxation on Titan aided by low thermal conductivity sand infill

NASA Astrophysics Data System (ADS)

Schurmeier, Lauren R.; Dombard, Andrew J.

2018-05-01

Titan's few impact craters are currently many hundreds of meters shallower than the depths expected. Assuming these craters initially had depths equal to that of similar-size fresh craters on Ganymede and Callisto (moons of similar size, composition, and target lithology), then some process has shallowed them over time. Since nearly all of Titan's recognized craters are located within the arid equatorial sand seas of organic-rich dunes, where rain is infrequent, and atmospheric sedimentation is expected to be low, it has been suggested that aeolian infill plays a major role in shallowing the craters. Topographic relaxation at Titan's current heat flow was previously assumed to be an unimportant process on Titan due to its low surface temperature (94 K). However, our estimate of the thermal conductivity of Titan's organic-rich sand is remarkably low (0.025 W m-1 K-1), and when in thick deposits, will result in a thermal blanketing effect that can aid relaxation. Here, we simulate the relaxation of Titan's craters Afekan, Soi, and Sinlap including thermal effects of various amounts of sand inside and around Titan's craters. We find that the combination of aeolian infill and subsequent relaxation can produce the current crater depths in a geologically reasonable period of time using Titan's current heat flow. Instead of needing to fill completely the missing volume with 100% sand, only ∼62%, ∼71%, and ∼97%, of the volume need be sand at the current basal heat flux for Afekan, Soi, and Sinlap, respectively. We conclude that both processes are likely at work shallowing these craters, and this finding contributes to why Titan overall lacks impact craters in the arid equatorial regions.

Acculturation of Greek Americans: Change and continuity in cognitive schemas guiding intimate relationships.

PubMed

Koutrelakos, James

2004-04-01

The study compares Greek Americans to Greeks and to third-generation white Americans in their endorsement of two cognitive schemas guiding intimate relationships. Greek Americans were more rejecting of low self-disclosure in intimate relationships than were Greeks but did not differ from them on how strongly they advocated sacrificing the self for one's partner. By contrast, Greek Americans did not differ from Americans in their rejection of low self-disclosure and more strongly endorsed self-sacrifice in intimate relationships than did Americans. These findings were interpreted as indicating that Greek Americans have acculturated to a more individualistic orientation in terms of self-disclosure while maintaining a collectivistic orientation regarding self-sacrifice in intimate relationships. Respondents' age, cultural group, and whether they were college students or professionals interacted with how strongly individuals rejected low self-disclosure and showed that age and status differences were more pronounced between rather than within the three cultural groups. It revealed that the initial finding, showing that Greeks and Americans differed, was based on the scores of students; professionals, with one exception, did not differ in their disagreement with low self-disclosure, regardless of their age and cultural group. The exception was the older Greek American professional subgroup, whose stronger disagreement with low self-disclosure may be an overreaction to the acculturation process. Age and status differences were not significant in the American group, while there was a pattern in Greece for professionals to reject low self-disclosure more strongly than did students. Women were more rejecting of both low self-disclosure and self-sacrifice in intimate relationships than were men. Older women most strongly disagreed with the self-sacrifice principle and older men adhered to it more strongly with increasing age. Cette étude compare des Américains grecs à des Grecs et à des Américains blancs de troisième génération relativement à leur adhésion à deux schémas cognitifs guidant les relations intimes. Les résultats indiquent que les Américains grecs se montrent plus rejetants d'une faible ouverture de soi dans les relations intimes comparativement aux Grecs, mais ils ne se différencient pas de ceux-ci quant à la force avec laquelle ils se disent prêts à se sacrifier pour leur partenaire. En contrepartie, Américain grecs ne se différencient pas des Américains sur le plan du rejet de la faible ouverture de soi, tout en se montrant davantage en accord avec le sacrifice de soi dans les relations intimes que ne le font les Américains. Ces résultats sont interprétés comme des indicateurs que les Américains grecs auraient adopté la culture américaine d'orientation plus individualiste en ce qui a trait à l'ouverture de soi, tandis qu'ils semblent avoir maintenu une orientation collectiviste en regard du sacrifice de soi dans les relations intimes. L'âge des répondants, leur groupe culturel et leur statut de collégien ou de professionnel montrent une interaction avec le degré de rejet de la faible ouverture de soi. Aussi, il appert que les différences d'âge et de statut sont plus prononcées entre les trois groupes culturels qu'à l'intérieur-même de ces groupes. Les résultats indiquent que les données initiales, montrant que les Grecs et les Américains sont différents, sont basées sur les scores des étudiants; de façon générale, en regard des professionnels uniquement, aucune différence n'est soulevée pour le degré d'accord face à la faible ouverture de soi, peu importe leur âge ou groupe culturel. Une exception apparaît toutefois pour le sous-groupe d'Américains grecs professionnels et plus âgés pour lequel le fort désaccord avec la faible ouverture de soi peut refléter une sur-réaction face au processus d'acculturation. Les différences d'âge et de statut n'apparaissent pas significatives pour le groupe d'Américains, tandis qu'il semble y avoir un patron chez les professionels grecs à rejeter plus fortement la faible ouverture de soi comparativement aux étudiants grecs. Enfin, les femmes se montrent plus rejetantes à la fois en ce qui concerne la faible ouverture de soi et le sacrifice de soi dans les relations intimes comparativement aux hommes. Les femmes plus âgées sont plus fortement en désaccord avec le principe de sacrifice de soi, tandis que les hommes plus âgés y adhèrent davantage à mesure qu'ils vieillissent. El estudio compara griegos estadounidenses con griegos y estadounidenses blancos de por lo menos tres generaciones respecto a qué tanto se sentían representados por dos esquemas cognitivos de las relaciones íntimas. Los griegos estadounidenses muestran mayor rechazo a revelar poco sobre sí mismos en las relaciones íntimas que los griegos, pero no difieren de éstos en cuanto a qué tanto se sacrificarían por la pareja. En contraste, los griegos estadounidenses no difirieron de los estadounidenses en su rechazo a revelar poco sobre sí mismos a la pareja y apoyaron más el auto sacrificio en las relaciones íntimas que los estadounidenses. Estos hallazgos se interpretaron como indicativos de que los griegos estadounidenses se han aculturado a una orientación más individualista en términos de qué tanto revelan sobre sí mismos, a la vez que han mantenido una orientación colectivista respecto al auto sacrificio en las relaciones íntimas. La edad, el grupo cultural, y la condición de estudiante o profesional interactuaron con el rechazo a revelar poco sobre sí mismo y mostró que la edad y la diferencia en la condición de estudiante o profesional eran más pronunciadas entre los tres grupos culturales que al interior de cada uno de éstos. Reveló que el hallazgo inicial sobre la diferencia entre griegos y estadounidenses se basaba en las calificaciones de los estudiantes; los profesionales, con una excepción, no diferían en cuanto a su desacuerdo con revelar poco sobre sí mismos, independientemente de su edad y grupo cultural. La excepción fue el subgrupo de profesionales griegos estadounidenses de mayor edad, cuyo mayor descuerdo con revelar poco sobre sí mismo podría ser una reacción exagerada al proceso de aculturación. Las diferencias en la edad y en la condición de estudiante o profesional no fueron significativas en el grupo de estadounidenses, en tanto que los profesionales griegos muestran una tendencia a rechazar con mayor fuerza el revelar poco sobre sí mismos, en comparación con los estudiantes. Las mujeres rechazan más que los hombres tanto revelar poco sobre sí mismas como el auto sacrificio en las relaciones íntimas. Las mujeres de mayor edad discrepan con mayor fuerza con el principio de auto sacrificio, y a mayor edad en los hombres mayor adhesión a éste.

Synthesis of highly integrated optical network based on microdisk-resonator add-drop filters in silicon-on-insulator technology

NASA Astrophysics Data System (ADS)

Kaźmierczak, Andrzej; Dortu, Fabian; Giannone, Domenico; Bogaerts, Wim; Drouard, Emmanuel; Rojo-Romeo, Pedro; Gaffiot, Frederic

2009-10-01

We analyze a highly compact optical add-drop filter topology based on a pair of microdisk resonators and a bus waveguide intersection. The filter is further assessed on an integrated optical 4×4 network for optical on-chip communication. The proposed network structure, as compact as 50×50 μm, is fabricated in a CMOS-compatible process on a silicon-on-insulator (SOI) substrate. Finally, the experimental results demonstrate the proper operation of the fabricated devices.

Optical properties of new wide heterogeneous waveguides with thermo optical shifters.

PubMed

De Leonardis, Francesco; Tsarev, Andrei V; Passaro, Vittorio M

2008-12-22

We present analysis and simulation of novel silicon-on-insulator (SOI) heterogeneous waveguides with thermo-optic phase shifters. New structure design contains a p-n junction on both sides of SOI ridge waveguide with 220 nm x 35 microm silicon core. Strongly mode-dependent optical losses (by additional free charge absorption) provide quasi-singe-mode behavior of wide waveguide with mode size approximately 10 microm. Local heater produces an efficient phase shifting by small temperature increase (DeltaT approximately 2K), switching power (< 40 mW) and switching time (< 10 micros). Mode optical losses are significantly decreased at high heating (DeltaT approximately 120 K).

A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

NASA Astrophysics Data System (ADS)

Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

2014-06-01

A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caër, Charles; Le Roux, Xavier; Cassan, Eric, E-mail: eric.cassan@u-psud.fr

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region

NASA Astrophysics Data System (ADS)

Cortés, I.; Toulon, G.; Morancho, F.; Flores, D.; Hugonnard-Bruyère, E.; Villard, B.

2012-04-01

This paper analyses the experimental results of voltage capability (VBR > 120 V) and output characteristics of a new lateral power P-channel MOS transistors manufactured on a 0.18 μm SOI CMOS technology by means of TCAD numerical simulations. The proposed LDPMOS structures have an N-type buried layer (NBL) inserted in the P-well drift region with the purpose of increasing the RESURF effectiveness and improving the static characteristics (Ron-sp/VBR trade-off) and the device switching performance. Some architecture modifications are also proposed in this paper to further improve the performance of fabricated transistors.

Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

NASA Astrophysics Data System (ADS)

Novo, C.; Giacomini, R.; Doria, R.; Afzalian, A.; Flandre, D.

2014-07-01

This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation mode and under high temperatures of operation, independently of the anode voltage. The obtained results show that the doping concentration of the intrinsic region has influence on the sensitivity of the diodes: the larger the doping concentration, the smaller the IDR. Furthermore, the photocurrent and dark current present lower values as the silicon film thickness is decreased, resulting in a further increase in the illuminated to dark ratio.

Research on SOI-based micro-resonator devices

NASA Astrophysics Data System (ADS)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of < 400 ps and crosstalk < -23 dB, and > 10 Gbit/s high speed microring modulators.

Area efficient layout design of CMOS circuit for high-density ICs

NASA Astrophysics Data System (ADS)

Mishra, Vimal Kumar; Chauhan, R. K.

2018-01-01

Efficient layouts have been an active area of research to accommodate the greater number of devices fabricated on a given chip area. In this work a new layout of CMOS circuit is proposed, with an aim to improve its electrical performance and reduce the chip area consumed. The study shows that the design of CMOS circuit and SRAM cells comprising tapered body reduced source fully depleted silicon on insulator (TBRS FD-SOI)-based n- and p-type MOS devices. The proposed TBRS FD-SOI n- and p-MOSFET exhibits lower sub-threshold slope and higher Ion to Ioff ratio when compared with FD-SOI MOSFET and FinFET technology. Other parameters like power dissipation, delay time and signal-to-noise margin of CMOS inverter circuits show improvement when compared with available inverter designs. The above device design is used in 6-T SRAM cell so as to see the effect of proposed layout on high density integrated circuits (ICs). The SNM obtained from the proposed SRAM cell is 565 mV which is much better than any other SRAM cell designed at 50 nm gate length MOS device. The Sentaurus TCAD device simulator is used to design the proposed MOS structure.

Sociosexual orientation and 2D:4D ratios in women: Relationship to men's desirability ratings as a long-term pair bond.

PubMed

DeLecce, Tara L; Polheber, John P; Matchock, Robert L

2014-02-01

The current study examined whether men's ratings of women's desirability as a long-term pairbond, based on static photographs, were related to the women's second-to-fourth digit (2D:4D) ratio and their sexual attitudes and behavior. The 2D:4D ratio was measured in 164 women and facial photographs were taken of 55 of these women. All women completed the Sociosexual Orientation Inventory (SOI). Male participants (n = 89), masked to this information, rated the 55 female participants on their desirability as a long-term sexual partner, specifically along dimensions of faithfulness, youthfulness, and attractiveness. Ten independent judges rated women's photographed faces on masculinity. Results indicated a significant negative relationship between women's SOI scores and men's faithfulness ratings (more unrestricted sociosexuality was associated with lower faithfulness ratings). There was also a significant positive relationship between right (but not left) 2D:4D ratio and faithfulness ratings (women with female-like ratios were rated as being more faithful). The SOI scores of the women were not related to 2D:4D ratios. These results suggest that the potential for sexual infidelity can be gleaned from static facial cues.

Hot temperatures during the dry season reduce survival of a resident tropical bird.

PubMed

Woodworth, Bradley K; Norris, D Ryan; Graham, Brendan A; Kahn, Zachary A; Mennill, Daniel J

2018-05-16

Understanding how climate change will shape species distributions in the future requires a functional understanding of the demographic responses of animals to their environment. For birds, most of our knowledge of how climate influences population vital rates stems from research in temperate environments, even though most of Earth's avian diversity is concentrated in the tropics. We evaluated effects of Southern Oscillation Index (SOI) and local temperature and rainfall at multiple temporal scales on sex-specific survival of a resident tropical bird, the rufous-and-white wren Thryophilus rufalbus , studied over 15 years in the dry forests of northwestern Costa Rica. We found that annual apparent survival of males was 8% higher than females, more variable over time, and responded more strongly to environmental variation than female survival, which did not vary strongly with SOI or local weather. For males, mean and maximum local temperatures were better predictors of survival than either rainfall or SOI, with high temperatures during the dry season and early wet season negatively influencing survival. These results suggest that, even for species adapted to hot environments, further temperature increases may threaten the persistence of local populations in the absence of distributional shifts. © 2018 The Author(s).

Intrinsic Gilbert Damping in Metallic Ferromagnets in Ballistic Regime and the Effect of Inelastic Electron Scattering from Magnetic Moments: A Time Dependent Keldysh Green Function Approach

NASA Astrophysics Data System (ADS)

Mahfouzi, Farzad; Kioussis, Nicholas

Gilbert damping in metallic ferromagnets is mainly governed by the exchange coupling between the electrons and the magnetic degree of freedom, where the time dependent evolution of the magnetization leads to the excitation of electrons and loss of energy as a result of flow of spin and charge currents. However, it turns out that when the magnetization evolves slowly in time, in the presence of spin-orbit interaction (SOI), the resonant electronic excitations has a major contribution to the damping which leads to infinite result in ballistic regime. In this work we consider the inelastic spin-flip scattering of electrons from the magnetic moments and show that in the presence of SOI it leads to the relaxation of the excited electrons. We show that in the case of clean crystal systems such scattering leads to a linear dependence of the Gilbert on the SOI strength and in the limit of diffusive systems we get the Gilbert damping expression obtained from Kambersky's Fermi breathing approach. This research was supported by NSF-PREM Grant No. DMR-1205734

[Study on Strain Detection with Si Based on Bicyclic Cascade Optical Microring Resonator].

PubMed

Tang, Jun; Lei, Long-hai; Zhang, Wei; Zhang, Tian-en; Xue, Chen-yang; Zhang, Wen-dong; Liu, Jun

2016-03-01

Optical micro-ring resonator prepared on Silicon-On-Insulator (SOI) has high sensitivity, small size and low mode volume. Its high sensitivity has been widely applied to the optical information transmission and inertial navigation devices field, while it is rarely applied in the testing of Mechanics. This paper presents a cantilever stress/strain gauge with an optical microring resonator. It is proposed the using of radius change of ring waveguide for the sensing element. When external stress is put on the structure, the radius of the SOI ring waveguide will be subjected to variation, which causes the optical resonant parameters to change. This ultimately leads to a red-shift of resonant spectrum, and shows the excellent characteristics of the structure's stress/strain sensitivity. Designed a bicyclic cascade embedded optical micro-cavity structure, which was prepared by employing MEMS lithography and ICP etching process. The characteristic of stress/strain sensitivity was calculated theoretically. Two values of 0.185 pm x kPa(-1) and 18.04 pm x microstrain(-1) were obtained experimentally, which also was verified by theoretical simulations. Comparing with the single-loop micro-cavity structure, its measuring range and stress sensitivity increased by nearly 50.3%, 10.6%, respectively. This paper provides a new method to develop micro-opto-electromechanical system (MOEMS) sensors.

Development of monolithic pixel detector with SOI technology for the ILC vertex detector

NASA Astrophysics Data System (ADS)

Yamada, M.; Ono, S.; Tsuboyama, T.; Arai, Y.; Haba, J.; Ikegami, Y.; Kurachi, I.; Togawa, M.; Mori, T.; Aoyagi, W.; Endo, S.; Hara, K.; Honda, S.; Sekigawa, D.

2018-01-01

We have been developing a monolithic pixel sensor for the International Linear Collider (ILC) vertex detector with the 0.2 μm FD-SOI CMOS process by LAPIS Semiconductor Co., Ltd. We aim to achieve a 3 μm single-point resolution required for the ILC with a 20×20 μm2 pixel. Beam bunch crossing at the ILC occurs every 554 ns in 1-msec-long bunch trains with an interval of 200 ms. Each pixel must record the charge and time stamp of a hit to identify a collision bunch for event reconstruction. Necessary functions include the amplifier, comparator, shift register, analog memory and time stamp implementation in each pixel, and column ADC and Zero-suppression logic on the chip. We tested the first prototype sensor, SOFIST ver.1, with a 120 GeV proton beam at the Fermilab Test Beam Facility in January 2017. SOFIST ver.1 has a charge sensitive amplifier and two analog memories in each pixel, and an 8-bit Wilkinson-type ADC is implemented for each column on the chip. We measured the residual of the hit position to the reconstructed track. The standard deviation of the residual distribution fitted by a Gaussian is better than 3 μm.

A Lorentz force actuated magnetic field sensor with capacitive read-out

NASA Astrophysics Data System (ADS)

Stifter, M.; Steiner, H.; Kainz, A.; Keplinger, F.; Hortschitz, W.; Sauter, T.

2013-05-01

We present a novel design of a resonant magnetic field sensor with capacitive read-out permitting wafer level production. The device consists of a single-crystal silicon cantilever manufactured from the device layer of an SOI wafer. Cantilevers represent a very simple structure with respect to manufacturing and function. On the top of the structure, a gold lead carries AC currents that generate alternating Lorentz forces in an external magnetic field. The free end oscillation of the actuated cantilever depends on the eigenfrequencies of the structure. Particularly, the specific design of a U-shaped structure provides a larger force-to-stiffness-ratio than standard cantilevers. The electrodes for detecting cantilever deflections are separately fabricated on a Pyrex glass-wafer. They form the counterpart to the lead on the freely vibrating planar structure. Both wafers are mounted on top of each other. A custom SU-8 bonding process on wafer level creates a gap which defines the equilibrium distance between sensing electrodes and the vibrating structure. Additionally to the capacitive read-out, the cantilever oscillation was simultaneously measured with laser Doppler vibrometry through proper windows in the SOI handle wafer. Advantages and disadvantages of the asynchronous capacitive measurement configuration are discussed quantitatively and presented by a comprehensive experimental characterization of the device under test.

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

NASA Astrophysics Data System (ADS)

Zhao, Xiaofeng; Li, Dandan; Yu, Yang; Wen, Dianzhong

2017-07-01

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors ({R}1, {R}2, {R}3 and {R}4) locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator (SOI) wafer by micro electromechanical system (MEMS) technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity (TCS) for the sensor before and after temperature compensation are -1862 and -1067 ppm/°C, respectively. Through varying the ratio of the base region resistances {r}1 and {r}2, the TCS for the sensor with the compensation circuit is -127 ppm/°C. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor. Project supported by the National Natural Science Foundation of China (No. 61471159), the Natural Science Foundation of Heilongjiang Province (No. F201433), the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No. 2015018), and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No. 2016RAXXJ016).

Alcohol Abuse Disorders Among U.S. Service Members With Mild Traumatic Brain Injury

DTIC Science & Technology

2011-02-01

the wounded from Iraq and Afghanistan. New Engl J Med 2004; 351: 2471 - 5. 7. Okie S: Traumatic brain injury in the war zone. New Engl J Med 2005...Alcohol and drug dependence and psychiatric comorbidity. Br J Psychiat ry 2001; 179 : 432- 7. 21 . Tonneson H, Rosenberg J, Nielsen HJ, et al

Surface-micromachined 2D optical scanners with optically flat single-crystalline silicon micromirrors

NASA Astrophysics Data System (ADS)

Su, John G.; Patterson, Pamela R.; Wu, Ming C.

2001-05-01

We have developed a novel wafer-scale single-crystalline silicon micromirror bonding process to fabricate optically flat micromirrors on polysilicon surface-micromachined 2D scanners. The electrostatically actuated 2D scanner has a mirror area of 450 micrometers x 450 micrometers and an optical scan angle of +/- +/-7.5 degree(s). Compared to micromirrors made with a standard polysilicon surface-micromachining process, the radius of curvature of the micromirror has been improved by 1 50 times from 1.8 cm to 265 cm, with surface roughness < 10 nm. Besides, single-crystalline honeycomb micromirrors derived from silicon on insulator (SOI) have been developed to reduce the mass of the bonded mirror.

Infrasonic detection performance in presence of nuisance signal

NASA Astrophysics Data System (ADS)

Charbit, Maurice; Arrowsmith, Stephen; Che, Il-young; Le Pichon, Alexis; Nouvellet, Adrien; Park, Junghyun; Roueff, Francois

2014-05-01

The infrasound network of the International Monitoring System (IMS) consists of sixty stations deployed all over the World by the Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO). The IMS has been designed to reliably detect, at least by two stations, an explosion greater than 1 kiloton located anywhere on the Earth [1]. Each station is an array of at least four microbarometers with an aperture of 1 to 3 km. The first important issue is to detect the presence of the signal of interest (SOI) embedded in noise. The detector is commonly based on the property that the SOI provides coherent observations on the sensors but not the noise. The statistic of test, called F-stat [2], [5], [6] , calculated in a time cell a few seconds, is commonly used for this purpose. In this paper, we assume that a coherent source is permanently present arriving from an unknown direction of arrivals (DOA). The typical case is the presence of microbaroms or the presence of wind. This source is seen as a nuisance signal (NS). In [4], [3] authors assume that a time cell without the SOI (CH0) is available, whereas a following time cell is considered as the cell under test (CUT). Therefore the DOA and the SNR of the NS can be estimated. If the signal-to-noise ration SNR of the NS is large enough, the distribution of the F-stat under the absence of SOI is known to be a non central Fisher. It follows that the threshold can be performed from a given value of the FAR. The major drawback to keep the NS is that the NS could hide the SOI, this phenomena is similar to the leakage which is a well-known phenomena in the Fourier analysis. An other approach consists to use the DOA estimate of the NS to mitigate the NS by spatial notch filter in the frequency domain. On this approach a new algorithm is provided. To illustrate, numerical results on synthetical and real data are presented, in term of Receiver Operating Characteristic ROC curves. REFERENCES [1] Christie D.R. and Campus P., The IMS infrasound netwrok: design and establishment of infrasound stations, Infrasound Monitoring for Atmospheric Studies, Springer Netherlands, Editor: Le Pichon, Alexis and Blanc, Elisabeth and Hauchecorne, Alain, pp 27-72, 2010. [2] Shumway R. H.,Advances in Mixed Signal Processing for Regional and Teleseismic Arrays 28th Seismic Research Review: Ground-Based Nuclear Explosion Monitoring Technologies, pp 503-509, 2007. [3] Park J., Hayward C.T., Zeiler C. P., Arrowsmith S.J. and Stump B.W., A Comparative Study of Automated Infrasound Detectors - PMCC and inframonitor with analyst review, SSA Annual Meeting, 2013. [4] Arrowsmith S.J., Whitaker R., Katz C. and Hayward C., The F-Detector Revisited: An Improved Strategy for Signal Detection at Seismic and Infrasound Arrays, Bulletin of the Seismological Society of America, 2008. [5] Arrowsmith S.J., Whitaker R., Steven R. Taylor, Burlacu R., Stump B.W., Hedlin M.A.H., Randall G., Hayward C. and ReVelle D., Regional monitoring of infrasound events using multiple arrays: application to Utah and Washington State, Geophys. J. Int., vol.175, pp 291-300, 2008. [6] Charbit M., Gaillard P. and Le Pichon A., Evaluating the performance of infrasound detectors, EGU, Vienne, Autriche, April 2012.

The Great Tohoku-Oki Earthquake and Tsunami of March 11, 2011 in Japan: A Critical Review and Evaluation of the Tsunami Source Mechanism

NASA Astrophysics Data System (ADS)

Pararas-Carayannis, George

2014-12-01

The great Tohoku-Oki earthquake of March 11, 2011 generated a very destructive and anomalously high tsunami. To understand its source mechanism, an examination was undertaken of the seismotectonics of the region and of the earthquake's focal mechanism, energy release, rupture patterns and spatial and temporal sequencing and clustering of major aftershocks. It was determined that the great tsunami resulted from a combination of crustal deformations of the ocean floor due to up-thrust tectonic motions, augmented by additional uplift due to the quake's slow and long rupturing process, as well as to large coseismic lateral movements which compressed and deformed the compacted sediments along the accretionary prism of the overriding plane. The deformation occurred randomly and non-uniformly along parallel normal faults and along oblique, en-echelon faults to the earthquake's overall rupture direction—the latter failing in a sequential bookshelf manner with variable slip angles. As the 1992 Nicaragua and the 2004 Sumatra earthquakes demonstrated, such bookshelf failures of sedimentary layers could contribute to anomalously high tsunamis. As with the 1896 tsunami, additional ocean floor deformation and uplift of the sediments was responsible for the higher waves generated by the 2011 earthquake. The efficiency of tsunami generation was greater along the shallow eastern segment of the fault off the Miyagi Prefecture where most of the energy release of the earthquake and the deformations occurred, while the segment off the Ibaraki Prefecture—where the rupture process was rapid—released less seismic energy, resulted in less compaction and deformation of sedimentary layers and thus to a tsunami of lesser offshore height. The greater tsunamigenic efficiency of the 2011 earthquake and high degree of the tsunami's destructiveness along Honshu's coastlines resulted from vertical crustal displacements of more than 10 m due to up-thrust faulting and from lateral compression and folding of sedimentary layers in an east-southeast direction which contributed additional uplift estimated at about 7 m—mainly along the leading segment of the accretionary prism of the overriding tectonic plate.

Recharge Data for the Islands of Kauai, Lanai and Molokai, Hawaii

DOE Data Explorer

Nicole Lautze

2015-01-01

Recharge data for the islands of Kauai, Lanai and Molokai in shapefile format. These data are from the following sources: Whittier, R.B and A.I. El-Kadi. 2014. Human Health and Environmental Risk Ranking of On-Site Sewage Disposal systems for the Hawaiian Islands of Kauai, Molokai, Maui, and Hawaii – Final, Prepared for Hawaii Dept. of Health, Safe Drinking Water Branch by the University of Hawaii, Dept. of Geology and Geophysics. (for Kauai, Lanai, Molokai). Shade, P.J., 1995, Water Budget for the Island of Kauai, Hawaii, USGS Water-Resources Investigations Report 95-4128, 25 p. (for Kauai). Izuka, S.K. and D.S. Oki, 2002 Numerical simulation of ground-water withdrawals in the Southern Lihue Basin, Kauai, Hawaii, U.S. Geologic Survey Water-Resources Investigations Report 01-4200, 52 pgs. (for Kauai). Hardy, W.R., 1996, A Numerical Groundwater Model for the Island of Lanai, Hawaii - CWRM Report No., CWRM-1, Commission on Water Resources Management, Department of Natural Resources, State of Hawaii, Honolulu, HI. (for Lanai). Oki, D.S., 1997, Geohydrology and numerical Simulation of the Ground-Water Flow System of Molokai, Hawaii, USGS Water-Resources Investigations Report 97-4176, 62 p. (for Molokai).

Earthquake-origin expansion of the Earth inferred from a spherical-Earth elastic dislocation theory

NASA Astrophysics Data System (ADS)

Xu, Changyi; Sun, Wenke

2014-12-01

In this paper, we propose an approach to compute the coseismic Earth's volume change based on a spherical-Earth elastic dislocation theory. We present a general expression of the Earth's volume change for three typical dislocations: the shear, tensile and explosion sources. We conduct a case study for the 2004 Sumatra earthquake (Mw9.3), the 2010 Chile earthquake (Mw8.8), the 2011 Tohoku-Oki earthquake (Mw9.0) and the 2013 Okhotsk Sea earthquake (Mw8.3). The results show that mega-thrust earthquakes make the Earth expand and earthquakes along a normal fault make the Earth contract. We compare the volume changes computed for finite fault models and a point source of the 2011 Tohoku-Oki earthquake (Mw9.0). The big difference of the results indicates that the coseismic changes in the Earth's volume (or the mean radius) are strongly dependent on the earthquakes' focal mechanism, especially the depth and the dip angle. Then we estimate the cumulative volume changes by historical earthquakes (Mw ≥ 7.0) since 1960, and obtain an Earth mean radius expanding rate about 0.011 mm yr-1.

A radon-thoron isotope pair as a reliable earthquake precursor

PubMed Central

Hwa Oh, Yong; Kim, Guebuem

2015-01-01

Abnormal increases in radon (222Rn, half-life = 3.82 days) activity have occasionally been observed in underground environments before major earthquakes. However, 222Rn alone could not be used to forecast earthquakes since it can also be increased due to diffusive inputs over its lifetime. Here, we show that a very short-lived isotope, thoron (220Rn, half-life = 55.6 s; mean life = 80 s), in a cave can record earthquake signals without interference from other environmental effects. We monitored 220Rn together with 222Rn in air of a limestone-cave in Korea for one year. Unusually large 220Rn peaks were observed only in February 2011, preceding the 2011 M9.0 Tohoku-Oki Earthquake, Japan, while large 222Rn peaks were observed in both February 2011 and the summer. Based on our analyses, we suggest that the anomalous peaks of 222Rn and 220Rn activities observed in February were precursory signals related to the Tohoku-Oki Earthquake. Thus, the 220Rn-222Rn combined isotope pair method can present new opportunities for earthquake forecasting if the technique is extensively employed in earthquake monitoring networks around the world. PMID:26269105

Geoengineering and seismological aspects of the Niigata-Ken Chuetsu-Oki earthquake of 16 July 2007

USGS Publications Warehouse

Kayen, R.; Brandenberg, S.J.; CoIlins, B.D.; Dickenson, S.; Ashford, S.; Kawamata, Y.; Tanaka, Y.; Koumoto, H.; Abrahamson, N.; Cluff, L.; Tokimatsu, K.

2009-01-01

The M6.6 Niigata-Ken Chuetsu-Oki earthquake of 16 July 2007 occurred off the west coast of Japan with a focal depth of 10 km, immediately west of Kashiwazaki City and Kariwa Village in southern Niigata Prefecture. Peak horizontal ground accelerations of 0.68 g were measured in Kashiwazaki City, as well as at the reactor floor level of the world's largest nuclear reactor, located on the coast at Kariwa Village. Liquefaction of historic and modern river deposits, aeolian dune sand, and manmade fill was widespread in the coastal region nearest the epicenter and caused ground deformations that damaged bridges, embankments, roadways, buildings, ports, railways and utilities. Landslides along the coast of southern Niigata Prefecture and in mountainous regions inland of Kashiwazaki were also widespread affecting transportation infrastructure. Liquefaction and a landslide also damaged the nuclear power plant sites. This paper, along with a companion digital map database available at http://walrus.wr.usgs.gOv/infobank/n/nii07jp/html/n-ii-07-jp.sites.kmz, describes the seismological and geo-engineering aspects of the event. ?? 2009, Earthquake Engineering Research Institute.

Implications of the Mw9.0 Tohoku-Oki earthquake for ground motion scaling with source, path, and site parameters

USGS Publications Warehouse

Stewart, Jonathan P.; Midorikawa, Saburoh; Graves, Robert W.; Khodaverdi, Khatareh; Kishida, Tadahiro; Miura, Hiroyuki; Bozorgnia, Yousef; Campbell, Kenneth W.

2013-01-01

The Mw9.0 Tohoku-oki Japan earthquake produced approximately 2,000 ground motion recordings. We consider 1,238 three-component accelerograms corrected with component-specific low-cut filters. The recordings have rupture distances between 44 km and 1,000 km, time-averaged shear wave velocities of VS30 = 90 m/s to 1,900 m/s, and usable response spectral periods of 0.01 sec to >10 sec. The data support the notion that the increase of ground motions with magnitude saturates at large magnitudes. High-frequency ground motions demonstrate faster attenuation with distance in backarc than in forearc regions, which is only captured by one of the four considered ground motion prediction equations for subduction earthquakes. Recordings within 100 km of the fault are used to estimate event terms, which are generally positive (indicating model underprediction) at short periods and zero or negative (overprediction) at long periods. We find site amplification to scale minimally with VS30 at high frequencies, in contrast with other active tectonic regions, but to scale strongly with VS30 at low frequencies.

Temporal stress changes caused by earthquakes: A review

USGS Publications Warehouse

Hardebeck, Jeanne L.; Okada, Tomomi

2018-01-01

Earthquakes can change the stress field in the Earth’s lithosphere as they relieve and redistribute stress. Earthquake-induced stress changes have been observed as temporal rotations of the principal stress axes following major earthquakes in a variety of tectonic settings. The stress changes due to the 2011 Mw9.0 Tohoku-Oki, Japan, earthquake were particularly well documented. Earthquake stress rotations can inform our understanding of earthquake physics, most notably addressing the long-standing problem of whether the Earth’s crust at plate boundaries is “strong” or “weak.” Many of the observed stress rotations, including that due to the Tohoku-Oki earthquake, indicate near-complete stress drop in the mainshock. This implies low background differential stress, on the order of earthquake stress drop, supporting the weak crust model. Earthquake stress rotations can also be used to address other important geophysical questions, such as the level of crustal stress heterogeneity and the mechanisms of postseismic stress reloading. The quantitative interpretation of stress rotations is evolving from those based on simple analytical methods to those based on more sophisticated numerical modeling that can capture the spatial-temporal complexity of the earthquake stress changes.

Preface to the special issue of Solid State Electronics EUROSOI/ULIS 2017

NASA Astrophysics Data System (ADS)

Nassiopoulou, Androula G.

2018-05-01

This special issue is devoted to selected papers presented at the EuroSOI-ULIS2017 international conference, held in Athens on 3-5 April 2017. EuroSOI-ULIS2017 Conference was mainly devoted to Si devices, which constitute the basic building blocks of any microelectronic circuit. It included papers on advanced Si technologies, novel nanoscale devices, advanced electronic materials and device architectures, mechanisms involved, test structures, substrate materials and technologies, modeling/simulation and characterization. Both CMOS and beyond CMOS devices were presented, covering the More Moore domain, as well as new functionalities in silicon-compatible nanostructures and innovative devices, representing the More than Moore domain (on-chip sensors, biosensors, energy harvesting devices, RF passives, etc.).

Coupled resonator optical waveguides based on silicon-on-insulator photonic wires

NASA Astrophysics Data System (ADS)

Xia, Fengnian; Sekaric, Lidija; O'Boyle, Martin; Vlasov, Yurii

2006-07-01

Coupled resonator optical waveguides (CROWs) comprised of up to 16 racetrack resonators based on silicon-on-insulator (SOI) photonic wires were fabricated and characterized. The optical properties of the CROWs were simulated using measured single resonator parameters based on a matrix approach. The group delay property of CROWs was also analyzed. The SOI based CROWs consisting of multiple resonators have extremely small footprints and can find applications in optical filtering, dispersion compensation, and optical buffering. Moreover, such CROW structure is a promising candidate for exploration of low light level nonlinear optics due to its resonant nature and compact mode size (˜0.1μm2) in photonic wire.

Special Issue: Planar Fully-Depleted SOI technology

NASA Astrophysics Data System (ADS)

Allibert, F.; Hiramoto, T.; Nguyen, B. Y.

2016-03-01

We are in the era of mobile computing with smart handheld devices and remote data storage "in the cloud," with devices that are almost always on and driven by needs of high data transmission rate, instant access/connection and long battery life. With all the ambitious requirements for better performance with lower power consumption, the SoC solution must also be cost-effective in order to capture the large, highly-competitive consumer mobile and wearable markets. The Fully-Depleted SOI device/circuit is a unique option that can satisfy all these requirements and has made tremendous progress in development for various applications and adoption by foundries, integrated device manufacturers (IDM), and fabless companies in the last 3 years.

Design of novel SOI 1 × 4 optical power splitter using seven horizontally slotted waveguides

NASA Astrophysics Data System (ADS)

Katz, Oded; Malka, Dror

2017-07-01

In this paper, we demonstrate a compact silicon on insulator (SOI) 1 × 4 optical power splitter using seven horizontal slotted waveguides. Aluminum nitride (AIN) surrounded by silicon (Si) was used to confine the optical field in the slot region. All of the power analysis has been done in transverse magnetic (TM) polarization mode and a compact optical power splitter as short as 14.5 μm was demonstrated. The splitter was designed by using full vectorial beam propagation method (FV-BPM) simulations. Numerical investigations show that this device can work across the whole C-band (1530-1565 nm) with excess loss better than 0.23 dB.

The design of radiation-hardened ICs for space - A compendium of approaches

NASA Technical Reports Server (NTRS)

Kerns, Sherra E.; Shafer, B. D; Rockett, L. R., Jr.; Pridmore, J. S.; Berndt, D. F.

1988-01-01

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

A Further Extension of the Tahiti-Darwin SOI, Early ENSO Events and Darwin Pressure.

NASA Astrophysics Data System (ADS)

Allan, Robert J.; Nicholls, Neville; Jones, Phil D.; Butterworth, Ian J.

1991-07-01

An extension of the Tahiti minus Darwin Southern Oscillation Index (SOI) from 1882 back to 1876 is reported following the recovery of early Darwin mean sea-level pressure data spanning the period 1865-81. As a result, we are able to compare, for the first time, the major 1877-78 and 1982-83 ENSO events on the basis of this commonly used index. Early Darwin and Jakarta data are also examined in terms of a measure of the Australian response to documented El Niño and/or ENSO events in 1866, 1868, 1871, 1873, 1874 and 1875.The SOI during the 1877-78 ENSO event has a similar temporal response to that in 1982-83, but the index is slightly weaker than in the recent event. Examination of documentary evidence confirms the severity of the drought conditions that affected the Australian continent during the 1877-78 ENSO, and shows that this response is in line with the wider Indo-Pacific impacts reported in the literature. Earlier El Niño phases in 1868 and 1873 are not resolved distinctly in either the Darwin or Jakarta pressure data. This appears to illustrate that El Niño event histories do not always indicate wider ENSO influences in the Indo-Pacific basin, particularly during weak to moderate phases.

Basis for the development of sustainable optimisation indicators for activated sludge wastewater treatment plants in the Republic of Ireland.

PubMed

Gordon, G T; McCann, B P

2015-01-01

This paper describes the basis of a stakeholder-based sustainable optimisation indicator (SOI) system to be developed for small-to-medium sized activated sludge (AS) wastewater treatment plants (WwTPs) in the Republic of Ireland (ROI). Key technical publications relating to best practice plant operation, performance audits and optimisation, and indicator and benchmarking systems for wastewater services are identified. Optimisation studies were developed at a number of Irish AS WwTPs and key findings are presented. A national AS WwTP manager/operator survey was carried out to verify the applied operational findings and identify the key operator stakeholder requirements for this proposed SOI system. It was found that most plants require more consistent operational data-based decision-making, monitoring and communication structures to facilitate optimised, sustainable and continuous performance improvement. The applied optimisation and stakeholder consultation phases form the basis of the proposed stakeholder-based SOI system. This system will allow for continuous monitoring and rating of plant performance, facilitate optimised operation and encourage the prioritisation of performance improvement through tracking key operational metrics. Plant optimisation has become a major focus due to the transfer of all ROI water services to a national water utility from individual local authorities and the implementation of the EU Water Framework Directive.

A proposed experimental diagnosing of specular Andreev reflection using the spin orbit interaction

PubMed Central

Yang, Yanling; Zhao, Bing; Zhang, Ziyu; Bai, Chunxu; Xu, Xiaoguang; Jiang, Yong

2016-01-01

Based on the Dirac-Bogoliubov-de Gennes equation, we theoretically investigate the chirality-resolved transport properties through a superconducting heterojunction in the presence of both the Rashba spin orbit interaction (RSOI) and the Dresselhaus spin orbit interaction (DSOI). Our results show that, if only the RSOI is present, the chirality-resolved Andreev tunneling conductance can be enhanced in the superconducting gap, while it always shows a suppression effect for the case of the DSOI alone. In contrast to the similar dependence of the specular Andreev zero bias tunneling conductance on the SOI, the retro-Andreev zero bias tunneling conductance exhibit the distinct dependence on the RSOI and the DSOI. Moreover, the zero-bias tunneling conductances for the retro-Andreev reflection (RAR) and the specular Andreev reflection (SAR) also show a qualitative difference with respect to the barrier parameters. When the RSOI and the DSOI are finite, three orders of magnitude enhancement of specular Andreev tunneling conductance is revealed. Furthermore, by analyzing the balanced SOI case, we find that the RAR is in favor of a parabolic dispersion, but a linear dispersion is highly desired for the SAR. These results shed light on the diagnosing of the SAR in graphene when subjected to both kinds of SOI. PMID:27388426

Emergency pediatric surgery: Comparing the economic burden in specialized versus nonspecialized children's centers.

PubMed

Kvasnovsky, Charlotte L; Lumpkins, Kimberly; Diaz, Jose J; Chun, Jeannie Y

2018-05-01

The American College of Surgeons has developed a verification program for children's surgery centers. Highly specialized hospitals may be verified as Level I, while those with fewer dedicated resources as Level II or Level III, respectively. We hypothesized that more specialized children's centers would utilize more resources. We performed a retrospective study of the Maryland Health Services Cost Review Commission (HSCRC) database from 2009 to 2013. We assessed total charge, length of stay (LOS), and charge per day for all inpatients with an emergency pediatric surgery diagnosis, controlling for severity of illness (SOI). Using published resources, we assigned theoretical level designations to each hospital. Two hospitals would qualify as Level 1 hospitals, with 4593 total emergency pediatric surgery admissions (38.5%) over the five-year study period. Charges were significantly higher for children treated at Level I hospitals (all P<0.0001). Across all SOI, children at Level I hospitals had significantly longer LOS (all P<0.0001). Hospitals defined as Level II and Level III provided the majority of care and were able to do so with shorter hospitalizations and lower charges, regardless of SOI. As care shifts towards specialized centers, this charge differential may have significant impact on future health care costs. Level III Cost Effectiveness Study. Copyright © 2018 Elsevier Inc. All rights reserved.

Climatic forcing and larval dispersal capabilities shape the replenishment of fishes and their habitat-forming biota on a tropical coral reef.

PubMed

Wilson, Shaun K; Depcyznski, Martial; Fisher, Rebecca; Holmes, Thomas H; Noble, Mae M; Radford, Ben T; Rule, Michael; Shedrawi, George; Tinkler, Paul; Fulton, Christopher J

2018-02-01

Fluctuations in marine populations often relate to the supply of recruits by oceanic currents. Variation in these currents is typically driven by large-scale changes in climate, in particular ENSO (El Nino Southern Oscillation). The dependence on large-scale climatic changes may, however, be modified by early life history traits of marine taxa. Based on eight years of annual surveys, along 150 km of coastline, we examined how ENSO influenced abundance of juvenile fish, coral spat, and canopy-forming macroalgae. We then investigated what traits make populations of some fish families more reliant on the ENSO relationship than others. Abundance of juvenile fish and coral recruits was generally positively correlated with the Southern Oscillation Index (SOI), higher densities recorded during La Niña years, when the ENSO-influenced Leeuwin Current is stronger and sea surface temperature higher. The relationship is typically positive and stronger among fish families with shorter pelagic larval durations and stronger swimming abilities. The relationship is also stronger at sites on the coral back reef, although the strongest of all relationships were among the lethrinids ( r  = .9), siganids ( r  = .9), and mullids ( r  = .8), which recruit to macroalgal meadows in the lagoon. ENSO effects on habitat seem to moderate SOI-juvenile abundance relationship. Macroalgal canopies are higher during La Niña years, providing more favorable habitat for juvenile fish and strengthening the SOI effect on juvenile abundance. Conversely, loss of coral following a La Niña-related heat wave may have compromised postsettlement survival of coral dependent species, weakening the influence of SOI on their abundance. This assessment of ENSO effects on tropical fish and habitat-forming biota and how it is mediated by functional ecology improves our ability to predict and manage changes in the replenishment of marine populations.

Thromboembolic Prophylaxis with Heparin in Patients with Blunt Solid Organ Injuries Undergoing Non-operative Treatment.

PubMed

Khatsilouskaya, Tatsiana; Haltmeier, Tobias; Cathomas, Marionna; Eberle, Barbara; Candinas, Daniel; Schnüriger, Beat

2017-05-01

Patients with blunt solid organ injuries (SOI) are at risk for venous thromboembolism (VTE), and VTE prophylaxis is crucial. However, little is known about the safety of early prophylactic administration of heparin in these patients. This is a retrospective study including adult trauma patients with SOI (liver, spleen, kidney) undergoing non-operative management (NOM) from 01/01/2009 to 31/12/2014. Three groups were distinguished: prophylactic heparin (low molecular weight heparin or low-dose unfractionated heparin) ≤72 h after admission ('early heparin group'), >72 h after admission ('late heparin group'), and no heparin ('no heparin group'). Patient and injury characteristics, transfusion requirements, and outcomes (failed NOM, VTE, and mortality) were compared between the three groups. Overall, 179 patients were included; 44.7% in the 'early heparin group,' 34.6% in the 'late heparin group,' and 20.8% in the 'no heparin group.' In the 'late heparin group,' the ISS was significantly higher than in the 'early' and 'no heparin groups' (median 29.0 vs. 17.0 vs. 19.0; p < 0.001). The overall NOM failure rate was 3.9%. Failed NOM was significantly more frequent in the 'no heparin group' compared to the 'early' and 'late heparin groups' (10.8 vs. 3.2 vs. 1.3%; p = 0.043). In the 'early heparin group' 27.5% patients suffered from a high-grade SOI; none of these patients failed NOM. Mortality did not differ significantly. Although not statistically significant, VTE were more frequent in the 'no heparin group' compared to the 'early' and 'late heparin groups' (10.8 vs. 4.8 vs. 1.3%; p = 0.066). In patients with SOI, heparin was administered early in a high percentage of patients and was not associated with an increased NOM failure rate or higher in-hospital mortality.

Large-scale quantum photonic circuits in silicon

NASA Astrophysics Data System (ADS)

Harris, Nicholas C.; Bunandar, Darius; Pant, Mihir; Steinbrecher, Greg R.; Mower, Jacob; Prabhu, Mihika; Baehr-Jones, Tom; Hochberg, Michael; Englund, Dirk

2016-08-01

Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes. Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

Deep Sea Gazing: Making Ship-Based Research Aboard RV Falkor Relevant and Accessible

NASA Astrophysics Data System (ADS)

Wiener, C.; Zykov, V.; Miller, A.; Pace, L. J.; Ferrini, V. L.; Friedman, A.

2016-02-01

Schmidt Ocean Institute (SOI) is a private, non-profit operating foundation established to advance the understanding of the world's oceans through technological advancement, intelligent observation, and open sharing of information. Our research vessel Falkorprovides ship time to selected scientists and supports a wide range of scientific functions, including ROV operations with live streaming capabilities. Since 2013, SOI has live streamed 55 ROV dives in high definition and recorded them onto YouTube. This has totaled over 327 hours of video which received 1,450, 461 views in 2014. SOI is one of the only research programs that makes their entire dive series available online, creating a rich collection of video data sets. In doing this, we provide an opportunity for scientists to make new discoveries in the video data that may have been missed earlier. These data sets are also available to students, allowing them to engage with real data in the classroom. SOI's video collection is also being used in a newly developed video management system, Ocean Video Lab. Telepresence-enabled research is an important component of Falkor cruises, which is exemplified by several that were conducted in 2015. This presentation will share a few case studies including an image tagging citizen science project conducted through the Squidle interface in partnership with the Australian Center for Field Robotics. Using real-time image data collected in the Timor Sea, numerous shore-based citizens created seafloor image tags that could be used by a machine learning algorithms on Falkor's high performance computer (HPC) to accomplish habitat characterization. With the use of the HPC system real-time robot tracking, image tagging, and other outreach connections were made possible, allowing scientists on board to engage with the public and build their knowledge base. The above mentioned examples will be used to demonstrate the benefits of remote data analysis and participatory engagement in science-based telepresence.

Customization of a Severity of Illness Score Using Local Electronic Medical Record Data.

PubMed

Lee, Joon; Maslove, David M

2017-01-01

Severity of illness (SOI) scores are traditionally based on archival data collected from a wide range of clinical settings. Mortality prediction using SOI scores tends to underperform when applied to contemporary cases or those that differ from the case-mix of the original derivation cohorts. We investigated the use of local clinical data captured from hospital electronic medical records (EMRs) to improve the predictive performance of traditional severity of illness scoring. We conducted a retrospective analysis using data from the Multiparameter Intelligent Monitoring in Intensive Care II (MIMIC-II) database, which contains clinical data from the Beth Israel Deaconess Medical Center in Boston, Massachusetts. A total of 17 490 intensive care unit (ICU) admissions with complete data were included, from 4 different service types: medical ICU, surgical ICU, coronary care unit, and cardiac surgery recovery unit. We developed customized SOI scores trained on data from each service type, using the clinical variables employed in the Simplified Acute Physiology Score (SAPS). In-hospital, 30-day, and 2-year mortality predictions were compared with those obtained from using the original SAPS using the area under the receiver-operating characteristics curve (AUROC) as well as the area under the precision-recall curve (AUPRC). Test performance in different cohorts stratified by severity of organ injury was also evaluated. Most customized scores (30 of 39) significantly outperformed SAPS with respect to both AUROC and AUPRC. Enhancements over SAPS were greatest for patients undergoing cardiovascular surgery and for prediction of 2-year mortality. Custom models based on ICU-specific data provided better mortality prediction than traditional SAPS scoring using the same predictor variables. Our local data approach demonstrates the value of electronic data capture in the ICU, of secondary uses of EMR data, and of local customization of SOI scoring. © The Author(s) 2015.

Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation.

PubMed

Pafchek, R; Tummidi, R; Li, J; Webster, M A; Chen, E; Koch, T L

2009-02-10

A thermal oxidation fabrication technique is employed to form low-loss high-index-contrast silicon shallow-ridge waveguides in silicon-on-insulator (SOI) with maximally tight vertical confinement. Drop-port responses from weakly coupled ring resonators demonstrate propagation losses below 0.36 dB/cm for TE modes. This technique is also combined with "magic width" designs mitigating severe lateral radiation leakage for TM modes to achieve propagation loss values of 0.94 dB/cm. We discuss the fabrication process utilized to form these low-loss waveguides and implications for sensor devices in particular.

High-contrast grating hollow-core waveguide splitter applied to optical phased array

NASA Astrophysics Data System (ADS)

Zhao, Che; Xue, Ping; Zhang, Hanxing; Chen, Te; Peng, Chao; Hu, Weiwei

2014-11-01

A novel hollow-core (HW) Y-branch waveguide splitter based on high-contrast grating (HCG) is presented. We calculated and designed the HCG-HW splitter using Rigorous Coupled Wave Analysis (RCWA). Finite-different timedomain (FDTD) simulation shows that the splitter has a broad bandwidth and the branching loss is as low as 0.23 dB. Fabrication is accomplished with standard Silicon-On-Insulator (SOI) process. The experimental measurement results indicate its good performance on beam splitting near the central wavelength λ = 1550 nm with a total insertion loss of 7.0 dB.

Multiplexing of adjacent vortex modes with the forked grating coupler

NASA Astrophysics Data System (ADS)

Nadovich, Christopher T.; Kosciolek, Derek J.; Crouse, David T.; Jemison, William D.

2017-08-01

For vortex fiber multiplexing to reach practical commercial viability, simple silicon photonic interfaces with vortex fiber will be required. These interfaces must support multiplexing. Toward this goal, an efficient singlefed multimode Forked Grating Coupler (FGC) for coupling two different optical vortex OAM charges to or from the TE0 and TE1 rectangular waveguide modes has been developed. A simple, apodized device implemented with e-beam lithography and a conventional dual-etch processing on SOI wafer exhibits low crosstalk and reasonable mode match. Advanced designs using this concept are expected to further improve performance.

Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

NASA Astrophysics Data System (ADS)

Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

2016-11-01

We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

High-sensitivity silicon nanowire phototransistors

NASA Astrophysics Data System (ADS)

Tan, Siew Li; Zhao, Xingyan; Dan, Yaping

2014-08-01

Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW phototransistors on silicon-oninsulator (SOI) substrate using CMOS-compatible processes. The device consists of a bipolar transistor structure with an optically-injected base region. The electronic and optical properties of the SiNW phototransistors are investigated. Preliminary simulation and experimental results show that nanowire geometry, doping densities and surface states have considerable effects on the device performance, and that a device with optimized parameters can potentially outperform conventional Si photodetectors.

Imaging of the native inversion layer in Silicon-On-Insulator wafers via Scanning Surface Photovoltage: Implications for RF device performance

NASA Astrophysics Data System (ADS)

Dahanayaka, Daminda; Wong, Andrew; Kaszuba, Philip; Moszkowicz, Leon; Slinkman, James; IBM SPV Lab Team

2014-03-01

Silicon-On-Insulator (SOI) technology has proved beneficial for RF cell phone technologies, which have equivalent performance to GaAs technologies. However, there is evident parasitic inversion layer under the Buried Oxide (BOX) at the interface with the high resistivity Si substrate. The latter is inferred from capacitance-voltage measurements on MOSCAPs. The inversion layer has adverse effects on RF device performance. We present data which, for the first time, show the extent of the inversion layer in the underlying substrate. This knowledge has driven processing techniques to suppress the inversion.

Breast Cancer Epidemiology in Puerto Rico

DTIC Science & Technology

2014-08-01

April 20: a. Poster: Effects of herbal enzyme bromelain against breast cancer cell line. Paroulek, Jaffe and Rathinavelu. Nova Southeastern Univ. 3...Canada. ii. American College of Sports Medicine 2009 in Seattle, Washington (May 27-30) 4. Thursday, May 28: a. Session: Exercise interventions in...Clinical Medicine II – Medical i. Effect of comprehensive exercise on lymphedema in breast cancer survivors: a pilot study. Oki, Troumbley, Walker

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

NASA Astrophysics Data System (ADS)

Zhang, Runchun; Zhao, Beiji; Huang, Kai; You, Tiangui; Jia, Qi; Lin, Jiajie; Zhang, Shibin; Yan, Youquan; Yi, Ailun; Zhou, Min; Ou, Xin

2018-05-01

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).

Advanced Microelectronics Technologies for Future Small Satellite Systems

NASA Technical Reports Server (NTRS)

Alkalai, Leon

1999-01-01

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

NASA Astrophysics Data System (ADS)

Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

2015-05-01

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

Thromboxane A2 moderates permeability after limb ischemia.

PubMed Central

Lelcuk, S; Alexander, F; Valeri, C R; Shepro, D; Hechtman, H B

1985-01-01

Reperfusion after limb ischemia results in muscle edema as well as excess secretion of thromboxane A2 (TxA2), an agent associated with permeability increase in other settings. This study tests whether TxA2 moderates the permeability following limb ischemia. A tourniquet inflated to 300 mmHg was applied for 2 hours around the hind limb of four groups of dogs. In untreated animals (N = 25), 2 hours following tourniquet release, plasma TxB2 values rose from 320 pg/ml to 2416 pg/ml (p less than 0.001), and popliteal lymph values rose from 378 pg/ml to 1046 pg/ml (p less than 0.001). Platelet TxB2 was unaltered and plasma 6-keto-PGF1 alpha levels did not vary. Following ischemia, lymph flow (QL) increased from 0.07 to 0.37 ml/h (p less than 0.05), while the lymph/plasma (L/P) protein ratio was unchanged at 0.41. These measurements indicate increased permeability since increase in hydrostatic pressure in a second group by tourniquet inflation to 50 mmHg (N = 7) led to a rise in QL from 0.07 to 0.22 ml/h, but a fall in the L/P ratio to 0.32, a value lower than the ischemic group (p less than 0.05). Pretreatment with the imidazole derivative ketoconazole (N = 11) reduced platelet Tx synthesis from 42 ng to 2 ng/10(9) platelets, but lymph TxB2 levels rose to 1703 pg/ml after ischemia, indicating an extravascular or vessel wall site of synthesis not inhibited by ketoconazole. Pretreatment with a lower molecular weight imidazole derivative OKY 046 (N = 9) inhibited all Tx synthesis after ischemia. Prior to tourniquet inflation, both OKY 046 and ketoconazole lowered plasma TxB2 levels as well as the L/P ratio (p less than 0.05). After ischemia, OKY 046, but not ketoconazole, maintained the L/P ratio at 0.33, a value below that of untreated animals (p less than 0.05). These results indicate that nonplatelet-derived TxA2 modulates both baseline and ischemia-induced increases in microvascular permeability in the dog hind limb. PMID:3840349

Ambient Noise Green's Function Simulation of Long-Period Ground Motions for Reverse Faulting

NASA Astrophysics Data System (ADS)

Miyake, H.; Beroza, G. C.

2009-12-01

Long-time correlation of ambient seismic noise has been demonstrated as a useful tool for strong ground motion prediction [Prieto and Beroza, 2008]. An important advantage of ambient noise Green's functions is that they can be used for ground motion simulation without resorting to either complex 3-D velocity structure to develop theoretical Green’s functions, or aftershock records for empirical Green’s function analysis. The station-to-station approach inherent to ambient noise Green’s functions imposes some limits to its application, since they are band-limited, applied at the surface, and for a single force. We explore the applicability of this method to strong motion prediction using the 2007 Chuetsu-oki, Japan, earthquake (Mw 6.6, depth = 9 km), which excited long-period ground motions in and around the Kanto basin almost 200 km from the epicenter. We test the performance of ambient noise Green's function for long-period ground motion simulation. We use three components of F-net broadband data at KZK station, which is located near the source region, as a virtual source, and three components of six F-net stations in and around the Kanto basin to calculate the response. An advantage to applying this approach in Japan is that ambient-noise sources are active in diverse directions. The dominant period of the ambient noise for the F-net datasets is mostly 7 s over the year, and amplitudes are largest in winter. This period matches the dominant periods of the Kanto and Niigata basins. For the 9 components of the ambient noise Green’s functions, we have confirmed long-period components corresponding to Love wave and Rayleigh waves that can be used for simulation of the 2007 Chuetsu-oki earthquake. The relative amplitudes, phases, and durations of the ambient noise Green’s functions at the F-net stations in and around the Kanto basin respect to F-net KZK station are fairly well matched with those of the observed ground motions for the 2007 Chuetsu-oki earthquake.

Geochemical signatures up to the maximum inundation of the 2011 Tohoku-oki tsunami — Implications for the 869 AD Jogan and other palaeotsunamis

NASA Astrophysics Data System (ADS)

Chagué-Goff, Catherine; Andrew, Anita; Szczuciński, Witold; Goff, James; Nishimura, Yuichi

2012-12-01

The geochemical signature of the Tohoku-oki tsunami deposit and underlying soil was assessed two months, five months and seven months after the 11 March 2011 tsunami inundated the Sendai Plain. The extent of the recognisable sand deposit was traced up to 2.9 km inland while a mud deposit was found up to 4.65 km inland, representing 60% and nearly 95% of the maximum tsunami inundation, respectively. The limit of tsunami inundation was identified 4.85 km from the shore using geochemical marine markers (S and Cl) two months after the tsunami, in the absence of any sedimentological evidence. Concentrations of other geochemical markers (K, Ca, Sr) indicative of the marine incursion and associated minerals were found to decrease landward. δ13C and δ15N and C/N ratios suggested a mixture of terrestrial and marine organic sources in the sediment, while δ34S of sulphate reflected the marine source of water soluble salts. The chemical composition of the 869 AD Jogan tsunami sand deposit was characterised by high Sr and Rb concentrations and was comparable to that of the Tohoku-oki tsunami deposit, suggesting that the sources of sediment may be similar. Marked decreases in S and Cl with time indicated that rainfall resulted in the leaching of salts from the sandy sediments. However, both S and Cl markers as well as Sr were still well preserved in the muddy sediments and underlying soil beyond the limit of the recognisable sand deposit seven months after the tsunami. This suggests that geochemical indicators may well be useful in identifying the extent of historical and palaeotsunamis by determining the marine origin of fine grained sediments beyond the limit of recognisable sand deposition, in particular when marine microfossils are sparse or lacking as is the case on the Sendai Plain. This would allow researchers to redraw palaeotsunami inundation maps and re-assess the magnitude of events such as the Jogan tsunami and other palaeotsunamis, not only on the Sendai Plain but also elsewhere around the world. This has important implications for tsunami risk assessment, hazard mitigation and preparedness.

Source Model of Huge Subduction Earthquakes for Strong Ground Motion Prediction

NASA Astrophysics Data System (ADS)

Iwata, T.; Asano, K.

2012-12-01

It is a quite important issue for strong ground motion prediction to construct the source model of huge subduction earthquakes. Irikura and Miyake (2001, 2011) proposed the characterized source model for strong ground motion prediction, which consists of plural strong ground motion generation area (SMGA, Miyake et al., 2003) patches on the source fault. We obtained the SMGA source models for many events using the empirical Green's function method and found the SMGA size has an empirical scaling relationship with seismic moment. Therefore, the SMGA size can be assumed from that empirical relation under giving the seismic moment for anticipated earthquakes. Concerning to the setting of the SMGAs position, the information of the fault segment is useful for inland crustal earthquakes. For the 1995 Kobe earthquake, three SMGA patches are obtained and each Nojima, Suma, and Suwayama segment respectively has one SMGA from the SMGA modeling (e.g. Kamae and Irikura, 1998). For the 2011 Tohoku earthquake, Asano and Iwata (2012) estimated the SMGA source model and obtained four SMGA patches on the source fault. Total SMGA area follows the extension of the empirical scaling relationship between the seismic moment and the SMGA area for subduction plate-boundary earthquakes, and it shows the applicability of the empirical scaling relationship for the SMGA. The positions of two SMGAs are in Miyagi-Oki segment and those other two SMGAs are in Fukushima-Oki and Ibaraki-Oki segments, respectively. Asano and Iwata (2012) also pointed out that all SMGAs are corresponding to the historical source areas of 1930's. Those SMGAs do not overlap the huge slip area in the shallower part of the source fault which estimated by teleseismic data, long-period strong motion data, and/or geodetic data during the 2011 mainshock. This fact shows the huge slip area does not contribute to strong ground motion generation (10-0.1s). The information of the fault segment in the subduction zone, or historical earthquake source area is also applicable for the construction of SMGA settings for strong ground motion prediction for future earthquakes.

Magnitude Estimation for the 2011 Tohoku-Oki Earthquake Based on Ground Motion Prediction Equations

NASA Astrophysics Data System (ADS)

Eshaghi, Attieh; Tiampo, Kristy F.; Ghofrani, Hadi; Atkinson, Gail M.

2015-08-01

This study investigates whether real-time strong ground motion data from seismic stations could have been used to provide an accurate estimate of the magnitude of the 2011 Tohoku-Oki earthquake in Japan. Ultimately, such an estimate could be used as input data for a tsunami forecast and would lead to more robust earthquake and tsunami early warning. We collected the strong motion accelerograms recorded by borehole and free-field (surface) Kiban Kyoshin network stations that registered this mega-thrust earthquake in order to perform an off-line test to estimate the magnitude based on ground motion prediction equations (GMPEs). GMPEs for peak ground acceleration and peak ground velocity (PGV) from a previous study by Eshaghi et al. in the Bulletin of the Seismological Society of America 103. (2013) derived using events with moment magnitude ( M) ≥ 5.0, 1998-2010, were used to estimate the magnitude of this event. We developed new GMPEs using a more complete database (1998-2011), which added only 1 year but approximately twice as much data to the initial catalog (including important large events), to improve the determination of attenuation parameters and magnitude scaling. These new GMPEs were used to estimate the magnitude of the Tohoku-Oki event. The estimates obtained were compared with real time magnitude estimates provided by the existing earthquake early warning system in Japan. Unlike the current operational magnitude estimation methods, our method did not saturate and can provide robust estimates of moment magnitude within ~100 s after earthquake onset for both catalogs. It was found that correcting for average shear-wave velocity in the uppermost 30 m () improved the accuracy of magnitude estimates from surface recordings, particularly for magnitude estimates of PGV (Mpgv). The new GMPEs also were used to estimate the magnitude of all earthquakes in the new catalog with at least 20 records. Results show that the magnitude estimate from PGV values using borehole recordings had the smallest standard deviation among the estimated magnitudes and produced more stable and robust magnitude estimates. This suggests that incorporating borehole strong ground-motion records immediately available after the occurrence of large earthquakes can provide robust and accurate magnitude estimation.

Three-dimensional site response at KiK-net downhole arrays

USGS Publications Warehouse

Thompson, Eric M.; Tanaka, Yasuo; Baise, Laurie G.; Kayen, Robert E.

2010-01-01

Ground motions at two Kiban-Kyoshin Network (KiK-net) strong motion downhole array sites in Hokkaido, Japan (TKCH08 in Taiki and TKCH05 in Honbetsu) illustrate the importance of three-dimensional (3D) site effects. These sites recorded the M8.0 2003 Tokachi-Oki earthquake, with recorded accelerations above 0.4 g at both sites as well as numerous ground motions from smaller events. Weak ground motions indicate that site TKCH08 is well modeled with the assumption of plane SH waves traveling through a 1D medium (SH1D), while TKCH05 is characteristic of a poor fit to the SH1D theoretical response. We hypothesized that the misfit at TKCH05results from the heterogeneity of the subsurface. To test this hypothesis, we measured four S-wave velocity profiles in the vicinity (< 300 m) of each site with the spectral analysis of surface waves (SASW) method. This KiK-net site pair is ideal for assessing the relative importance of 3D site effects and nonlinear site effects. The linear ground motions at TKCH05 isolate the 3D site effects, as we hypothesized from the linear ground motions and confirmed with our subsequent SASW surveys. The Tokachi-Oki time history at TKCH08 isolates the effects of nonlinearity from spatial heterogeneity because the 3D effects are negligible. The Tokachi-Oki time history at TKCH05 includes both nonlinear and 3D site effects. Comparisons of the accuracy of the SH1D model predictions of these surface time histories from the downhole time histories indicates that the 3D site effects are at least as important as nonlinear effects in this case. The errors associated with the assumption of a 1D medium and 1D wave propagation will be carried into a nonlinear analysis that relies on these same assumptions. Thus, the presence of 3D effects should be ruled out prior to a 1D nonlinear analysis. The SH1D residuals show that 3D effects can be mistaken for nonlinear effects.

An accurate model for predicting high frequency noise of nanoscale NMOS SOI transistors

NASA Astrophysics Data System (ADS)

Shen, Yanfei; Cui, Jie; Mohammadi, Saeed

2017-05-01

A nonlinear and scalable model suitable for predicting high frequency noise of N-type Metal Oxide Semiconductor (NMOS) transistors is presented. The model is developed for a commercial 45 nm CMOS SOI technology and its accuracy is validated through comparison with measured performance of a microwave low noise amplifier. The model employs the virtual source nonlinear core and adds parasitic elements to accurately simulate the RF behavior of multi-finger NMOS transistors up to 40 GHz. For the first time, the traditional long-channel thermal noise model is supplemented with an injection noise model to accurately represent the noise behavior of these short-channel transistors up to 26 GHz. The developed model is simple and easy to extract, yet very accurate.

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Two-way reflector based on two-dimensional sub-wavelength high-index contrast grating on SOI

NASA Astrophysics Data System (ADS)

Kaur, Harpinder; Kumar, Mukesh

2016-05-01

A two-dimensional (2D) high-index contrast grating (HCG) is proposed as a two-way reflector on Silicon-on-insulator (SOI). The proposed reflector provides high reflectivity over two (practically important) sets of angles of incidence- normal (θ = 0 °) and oblique/grazing (θ = 80 ° - 85 ° / 90 °). Analytical model of 2D HCG is presented using improved Fourier modal method. The vertical incidence is useful for application in VCSEL while oblique/grazing incidence can be utilized in high confinement (HCG mirrors based) hollow waveguides and Bragg reflectors. The proposed two-way reflector also exhibits a large reflection bandwidth (around telecom wavelength) which is an advantage for broadband photonic devices.

Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology

NASA Astrophysics Data System (ADS)

Athanasiou, Sotirios; Legrand, Charles-Alexandre; Cristoloveanu, Sorin; Galy, Philippe

2017-02-01

We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (VBR) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (Vt1) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.

Silicon-based Coulomb blockade thermometer with Schottky barriers

NASA Astrophysics Data System (ADS)

Tuboltsev, V.; Savin, A.; Rogozin, V. D.; Räisänen, J.

2014-04-01

A hybrid Coulomb blockade thermometer (CBT) in form of an array of intermittent aluminum and silicon islands connected in series via tunnel junctions was fabricated on a thin silicon-on-insulator (SOI) film. Tunnel barriers in the micrometer size junctions were formed by metal-semiconductor Schottky contacts between aluminium electrodes and heavily doped silicon. Differential conductance through the array vs. bias voltage was found to exhibit characteristic features of competing thermal and charging effects enabling absolute temperature measurements over the range of ˜65 to ˜500 mK. The CBT performance implying the primary nature of the thermometer demonstrated for rather trivial architecture attempted in this work paves a route for introduction of Coulomb blockade thermometry into well-developed contemporary SOI technology.

Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

NASA Astrophysics Data System (ADS)

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sungho; Choi, Yang-Kyu

2009-03-01

This paper describes a unified memory (URAM) that utilizes a nanocrystal SOI MOSFET for multi-functional applications of both nonvolatile memory (NVM) and capacitorless 1T-DRAM. By using a discrete storage node (Ag nanocrystal) as the floating gate of the NVM, high defect immunity and 2-bit/cell operation were achieved. The embedded nanocrystal NVM also showed 1T-DRAM operation (program/erase time = 100 ns) characteristics, which were realized by storing holes in the floating body of the SOI MOSFET, without requiring an external capacitor. Three-bit/cell operation was accomplished for different applications - 2-bits for nonvolatility and 1-bit for fast operation.

Does permanent extensional deformation in lower forearc slopes indicate shallow plate-boundary rupture?

NASA Astrophysics Data System (ADS)

Geersen, J.; Ranero, C. R.; Kopp, H.; Behrmann, J. H.; Lange, D.; Klaucke, I.; Barrientos, S.; Diaz-Naveas, J.; Barckhausen, U.; Reichert, C.

2018-05-01

Seismic rupture of the shallow plate-boundary can result in large tsunamis with tragic socio-economic consequences, as exemplified by the 2011 Tohoku-Oki earthquake. To better understand the processes involved in shallow earthquake rupture in seismic gaps (where megathrust earthquakes are expected), and investigate the tsunami hazard, it is important to assess whether the region experienced shallow earthquake rupture in the past. However, there are currently no established methods to elucidate whether a margin segment has repeatedly experienced shallow earthquake rupture, with the exception of mechanical studies on subducted fault-rocks. Here we combine new swath bathymetric data, unpublished seismic reflection images, and inter-seismic seismicity to evaluate if the pattern of permanent deformation in the marine forearc of the Northern Chile seismic gap allows inferences on past earthquake behavior. While the tectonic configuration of the middle and upper slope remains similar over hundreds of kilometers along the North Chilean margin, we document permanent extensional deformation of the lower slope localized to the region 20.8°S-22°S. Critical taper analyses, the comparison of permanent deformation to inter-seismic seismicity and plate-coupling models, as well as recent observations from other subduction-zones, including the area that ruptured during the 2011 Tohoku-Oki earthquake, suggest that the normal faults at the lower slope may have resulted from shallow, possibly near-trench breaking earthquake ruptures in the past. In the adjacent margin segments, the 1995 Antofagasta, 2007 Tocopilla, and 2014 Iquique earthquakes were limited to the middle and upper-slope and the terrestrial forearc, and so are upper-plate normal faults. Our findings suggest a seismo-tectonic segmentation of the North Chilean margin that seems to be stable over multiple earthquake cycles. If our interpretations are correct, they indicate a high tsunami hazard posed by the yet un-ruptured southern segment of the seismic gap.

Mode cross coupling observations with a rotation sensor.

NASA Astrophysics Data System (ADS)

Nader, Maria-Fernanda; Igel, Heiner; Ferreira, Ana M. G.; Al-Attar, David

2013-04-01

The Earth's free oscillations induced by large earthquakes have been one of the most important ways to measure the Earth's internal structure and processes. They provide important large scale constraints on a variety of elastic parameters, attenuation and density of the Earth's deep interior. The potential of rotational seismic records for long period seismology was proven useful as a complement to traditional measurements in the study of the Earth's free oscillations (Igel et al. 2011). Thanks to the high resolution of the G-ring laser located at Geodetic Observatory Wettzell, Germany, we are now able to study the spectral energy generated by rotations in the low frequency range. On a SNREI Earth, a vertical component rotational sensor is primarily excited by horizontally polarised shear motions (SH waves, Love waves) with theoretically no sensitivity to compressional waves and conversions (P-SV) and Rayleigh waves. Consequently, in the context of the Earth's normal modes, this instrument detects mostly toroidal modes. Here, we present observations of spectral energy of both toroidal and spheroidal normal modes in the G-ring Laser records of two of the largest magnitude events recently recorded: Tohoku-Oki, Japan, 2011 and Maule, Chile, 2010. In an attempt to determine the mechanisms responsible for spheroidal energy in the vertical axes rotational spectra, we first rule out instrumental effects as well as the effect of local heterogeneity. Second, we carry out a simulation of an ideal rotational sensor taking into account the effects of the Earth's daily rotation, its hydrostatic ellipticity and structural heterogeneity, finding a good fit to the data. Simulations considering each effect separately are performed in order to evaluate the sensitivity of rotational motions to global effects with respect to traditional translation measurements. Igel H, Nader MF, Kurrle D, Ferreira AM,Wassermann J, Schreiber KU (2011) ''Observations of Earth's toroidal free oscillations with a rotation sensor: the 2011 magnitude 9.0 Tohoku-Oki earthquake.'' Geophys Res Lett. doi:10.1029/2011GL049045

Integrated MEMS-based variable optical attenuator and 10Gb/s receiver

NASA Astrophysics Data System (ADS)

Aberson, James; Cusin, Pierre; Fettig, H.; Hickey, Ryan; Wylde, James

2005-03-01

MEMS devices can be successfully commercialized in favour of competing technologies only if they offer an advantage to the customer in terms of lower cost or increased functionality. There are limited markets where MEMS can be manufactured cheaper than similar technologies due to large volumes: automotive, printing technology, wireless communications, etc. However, success in the marketplace can also be realized by adding significant value to a system at minimal cost or leverging MEMS technology when other solutions simply will not work. This paper describes a thermally actuated, MEMS based, variable optical attenuator that is co-packaged with existing opto-electronic devices to develop an integrated 10Gb/s SONET/SDH receiver. The configuration of the receiver opto-electronics and relatively low voltage availability (12V max) in optical systems bar the use of LCD, EO, and electro-chromic style attenuators. The device was designed and fabricated using a silicon-on-insulator (SOI) starting material. The design and performance of the device (displacement, power consumption, reliability, physical geometry) was defined by the receiver parameters geometry. This paper will describe how these design parameters (hence final device geometry) were determined in light of both the MEMS device fabrication process and the receiver performance. Reference will be made to the design tools used and the design flow which was a joint effort between the MEMS vendor and the end customer. The SOI technology offered a robust, manufacturable solution that gave the required performance in a cost-effective process. However, the singulation of the devices required the development of a new singulation technique that allowed large volumes of silicon to be removed during fabrication yet still offer high singulation yields.

Enhanced spectroscopic gas sensors using in-situ grown carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Luca, A.; Cole, M. T.; Milne, W. I.

2015-05-11

In this letter, we present a fully complementary-metal-oxide-semiconductor (CMOS) compatible microelectromechanical system thermopile infrared (IR) detector employing vertically aligned multi-walled carbon nanotubes (CNT) as an advanced nano-engineered radiation absorbing material. The detector was fabricated using a commercial silicon-on-insulator (SOI) process with tungsten metallization, comprising a silicon thermopile and a tungsten resistive micro-heater, both embedded within a dielectric membrane formed by a deep-reactive ion etch following CMOS processing. In-situ CNT growth on the device was achieved by direct thermal chemical vapour deposition using the integrated micro-heater as a micro-reactor. The growth of the CNT absorption layer was verified through scanning electronmore » microscopy, transmission electron microscopy, and Raman spectroscopy. The functional effects of the nanostructured ad-layer were assessed by comparing CNT-coated thermopiles to uncoated thermopiles. Fourier transform IR spectroscopy showed that the radiation absorbing properties of the CNT adlayer significantly enhanced the absorptivity, compared with the uncoated thermopile, across the IR spectrum (3 μm–15.5 μm). This led to a four-fold amplification of the detected infrared signal (4.26 μm) in a CO{sub 2} non-dispersive-IR gas sensor system. The presence of the CNT layer was shown not to degrade the robustness of the uncoated devices, whilst the 50% modulation depth of the detector was only marginally reduced by 1.5 Hz. Moreover, we find that the 50% normalized absorption angular profile is subsequently more collimated by 8°. Our results demonstrate the viability of a CNT-based SOI CMOS IR sensor for low cost air quality monitoring.« less

Excitation of the Earth's Chandler wobble by southern oscillation/El Nino, 1900-1979

NASA Technical Reports Server (NTRS)

Chao, B. F.

1985-01-01

The southern oscillation/El Nino (ENSO) is the single most prominent interannual signal in global atmospheric/oceanic fluctuations. The following question is addressed: how important is the angular momentum carried by ENSO in exciting the Earth's Chandler wobble? The question is attacked through a statistical analysis of the coherence spectra (correlation as a function of frequency) between two data sets spanning 1900 to 1979-the southern oscillation index (SOI) time series and the excitation function psi (with x-component psi sub x and y-component psi sub y) of the Chandler wobble derived from the homogeneous ILS (International Latitude Service) polar motion data. The coherence power and phase in the Chandler frequency band (approx. 0.79 to 0.89 cpy) are studied. It is found that, during 1900 to 1979 the coherence between SOI and psi sub x is significant well over the 95% confidence threshold whereas that between SOI and psi sub y is practically nil. Quantitatively, the coherence study shows that ENSO provides some 20% of the observed Chandler wobble excitation power. Since earlier investigations have shown that the total atmospheric/oceanic variation can account for the Chandler wobble excitation at about 20% level, the implication is that ENSO maybe an important (interannual) part of the atmospheric/oceanic variation that is responsible for the Chandler wobble excitation during 1900 to 1979.

ONRASIA Scientific Information Bulletin. Volume 17, Number 4, October-December 1992

DTIC Science & Technology

1992-12-01

Corporate Software Planning Oki’s Software Improvement Environment and Engineering Div. Strategy - Effective Management - Improvement of Informa- Mr...a CCITT-supported implementation phase. -- David K fore we have effectively implemented ISO Standard high-level language Kahaner, ONRASIA them...power with a system fo- putation) Result cused on their specific needs. Result Effective speed should be (Readers can write to me or to 150 times VP-400

Disturbance of Shallow Marine Soft-Bottom Environments and Megabenthos Assemblages by a Huge Tsunami Induced by the 2011 M9.0 Tohoku-Oki Earthquake

PubMed Central

Seike, Koji; Shirai, Kotaro; Kogure, Yukihisa

2013-01-01

Huge tsunami waves associated with megathrust earthquakes have a severe impact on shallow marine ecosystems. We investigated the impact of a tsunami generated by the 2011 M9.0 Tohoku-Oki earthquake on the seafloor and large benthic animals in muddy and sandy ria coasts (Otsuchi and Funakoshi bays) in northeastern Japan. We conducted underwater field surveys using scuba equipment in water depths of <20 m before the tsunami (September 2010) and after the tsunami (September 2011 and September 2012). During the study period, episodic changes in topography and grain-size composition occurred on the seafloor of the study area. Megabenthos sampling revealed a distinct pattern of distribution succession for each benthic species. For example, the protobranch bivalve Yoldia notabilis (Bivalvia: Nuculanidae) and the heterodont bivalve Felaniella usta (Bivalvia: Ungulinidae) disappeared after the tsunami event, whereas the distribution of the venus clam Gomphina melanaegis (Bivalvia: Veneridae) remained unchanged. In addition, the patterns of succession for a single species, such as the giant button top shell Umbonium costatum (Gastropoda: Trochidae) and the heart urchin Echinocardium cordatum (Echinoidea: Loveniidae), varied between the two bays studied. Our data also show that reestablishment of some benthic animal populations began within 18 months of the tsunami disturbance. PMID:23762365

Disturbance of shallow marine soft-bottom environments and megabenthos assemblages by a huge tsunami induced by the 2011 M9.0 Tohoku-Oki earthquake.

PubMed

Seike, Koji; Shirai, Kotaro; Kogure, Yukihisa

2013-01-01

Huge tsunami waves associated with megathrust earthquakes have a severe impact on shallow marine ecosystems. We investigated the impact of a tsunami generated by the 2011 M9.0 Tohoku-Oki earthquake on the seafloor and large benthic animals in muddy and sandy ria coasts (Otsuchi and Funakoshi bays) in northeastern Japan. We conducted underwater field surveys using scuba equipment in water depths of <20 m before the tsunami (September 2010) and after the tsunami (September 2011 and September 2012). During the study period, episodic changes in topography and grain-size composition occurred on the seafloor of the study area. Megabenthos sampling revealed a distinct pattern of distribution succession for each benthic species. For example, the protobranch bivalve Yoldia notabilis (Bivalvia: Nuculanidae) and the heterodont bivalve Felaniella usta (Bivalvia: Ungulinidae) disappeared after the tsunami event, whereas the distribution of the venus clam Gomphina melanaegis (Bivalvia: Veneridae) remained unchanged. In addition, the patterns of succession for a single species, such as the giant button top shell Umbonium costatum (Gastropoda: Trochidae) and the heart urchin Echinocardium cordatum (Echinoidea: Loveniidae), varied between the two bays studied. Our data also show that reestablishment of some benthic animal populations began within 18 months of the tsunami disturbance.

Investigation of the M6.6 Niigata-Chuetsu Oki, Japan, earthquake of July 16, 2007

USGS Publications Warehouse

Kayen, Robert; Collins, Brian D.; Abrahamson, Norm; Ashford, Scott; Brandenberg, Scott J.; Cluff, Lloyd; Dickenson, Stephen; Johnson, Laurie; Tanaka, Yasuo; Tokimatsu, Kohji; Kabeyasawa, Toshimi; Kawamata, Yohsuke; Koumoto, Hidetaka; Marubashi, Nanako; Pujol, Santiago; Steele, Clint; Sun, Joseph I.; Tsai, Ben; Yanev, Peter; Yashinsky, Mark; Yousok, Kim

2007-01-01

The M6.6 mainshock of the Niigata Chuetsu Oki (offshore) earthquake occurred at 10:13 a.m. local time on July 16, 2007, and was followed by a sequence of aftershocks that were felt during the entire time of the reconnaissance effort. The mainshock had an estimated focal depth of 10 km and struck in the Japan Sea offshore Kariwa. Analysis of waveforms from source inversion studies indicates that the event occurred along a thrust fault with a NE trend. The fault plane is either a strike of 34 degrees with a dip of 51 degrees or a strike of 238 degrees with a dip of 41 degrees. Which of these two planes is associated with the mainshock rupture is unresolved, although attenuation relationship analysis indicates that the northwest-dipping fault is favored. The quake affected an approximately 100-km-wide area along the coastal areas of southwestern Niigata prefecture. The event triggered ground failures as far as the Unouma Hills, located in central Niigata approximately 50 km from the shore and the source area of the 2004 Niigata Chuetsu earthquake. The primary event produced tsunami run-ups that reached maximum runup heights of about 20 centimeters along the shoreline of southern Niigata Prrefecture.

A new physics-based modeling approach for tsunami-ionosphere coupling

NASA Astrophysics Data System (ADS)

Meng, X.; Komjathy, A.; Verkhoglyadova, O. P.; Yang, Y.-M.; Deng, Y.; Mannucci, A. J.

2015-06-01

Tsunamis can generate gravity waves propagating upward through the atmosphere, inducing total electron content (TEC) disturbances in the ionosphere. To capture this process, we have implemented tsunami-generated gravity waves into the Global Ionosphere-Thermosphere Model (GITM) to construct a three-dimensional physics-based model WP (Wave Perturbation)-GITM. WP-GITM takes tsunami wave properties, including the wave height, wave period, wavelength, and propagation direction, as inputs and time-dependently characterizes the responses of the upper atmosphere between 100 km and 600 km altitudes. We apply WP-GITM to simulate the ionosphere above the West Coast of the United States around the time when the tsunami associated with the March 2011 Tohuku-Oki earthquke arrived. The simulated TEC perturbations agree with Global Positioning System observations reasonably well. For the first time, a fully self-consistent and physics-based model has reproduced the GPS-observed traveling ionospheric signatures of an actual tsunami event.

16-channel arrayed waveguide grating (AWG) demultiplexer design on SOI wafer for application in CWDM-PON

NASA Astrophysics Data System (ADS)

Juhari, Nurjuliana; Menon, P. Susthitha; Ehsan, Abang Annuar; Shaari, Sahbudin

2015-01-01

Arrayed Waveguide Grating (AWG) functioning as a demultiplexer is designed on SOI platform with rib waveguide structure to be utilized in coarse wavelength division multiplexing-passive optical network (CWDM-PON) systems. Two design approaches; conventional and tapered configuration of AWG was developed with channel spacing of 20 nm that covers the standard transmission spectrum of CWDM ranging from 1311 nm to 1611 nm. The performance of insertion loss for tapered configuration offered the lowest insertion loss of 0.77 dB but the adjacent crosstalk gave non-significant relation for both designs. With average channel spacing of 20.4 nm, the nominal central wavelength of this design is close to the standard CWDM wavelength grid over 484 nm free spectrum range (FSR).

Recent Design Development in Molecular Imaging for Breast Cancer Detection Using Nanometer CMOS Based Sensors.

PubMed

Nguyen, Dung C; Ma, Dongsheng Brian; Roveda, Janet M W

2012-01-01

As one of the key clinical imaging methods, the computed X-ray tomography can be further improved using new nanometer CMOS sensors. This will enhance the current technique's ability in terms of cancer detection size, position, and detection accuracy on the anatomical structures. The current paper reviewed designs of SOI-based CMOS sensors and their architectural design in mammography systems. Based on the existing experimental results, using the SOI technology can provide a low-noise (SNR around 87.8 db) and high-gain (30 v/v) CMOS imager. It is also expected that, together with the fast data acquisition designs, the new type of imagers may play important roles in the near-future high-dimensional images in additional to today's 2D imagers.

Transversely coupled Fabry-Perot resonators with Bragg grating reflectors.

PubMed

Saber, Md Ghulam; Wang, Yun; El-Fiky, Eslam; Patel, David; Shahriar, Kh Arif; Alam, Md Samiul; Jacques, Maxime; Xing, Zhenping; Xu, Luhua; Abadía, Nicolás; Plant, David V

2018-01-01

We design and demonstrate Fabry-Perot resonators with transverse coupling using Bragg gratings as reflectors on the silicon-on-insulator (SOI) platform. The effects of tailoring the cavity length and the coupling coefficient of the directional coupler on the spectral characteristics of the device are studied. The fabricated resonators achieved an extinction ratio (ER) of 37.28 dB and a Q-factor of 3356 with an effective cavity length of 110 μm, and an ER of 8.69 dB and a Q-factor of 23642 with a 943 μm effective cavity length. The resonator structure presented here has the highest reported ER on SOI and provides additional degrees of freedom compared to an all-pass ring resonator to tune the spectral characteristics.

Long-wave infrared 1 × 2 MMI based on air-gap beneath silicon rib waveguides

NASA Astrophysics Data System (ADS)

Wei, Yuxin; Li, Guoyi; Hao, Yinlei; Li, Yubo; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2011-08-01

The undercut long-wave infrared (LWIR) waveguide components with air-gap beneath are analyzed and fabricated on the Si-wafer with simple manufacturing process. A 1 × 2 multimode interference (MMI) splitter based on this structure is presented and measured under the 10.6μm wavelength experimental setup. The uniformity of the MMI fabricated is 0.76 dB. The relationship among the output power, slab thickness and air-gap width is also fully discussed. Furthermore, undercut straight waveguides based on SOI platform are fabricated for propagation loss evaluation. Ways to reduce the loss are discussed either.

OM300 Direction Drilling Module

DOE Data Explorer

MacGugan, Doug

2013-08-22

OM300 – Geothermal Direction Drilling Navigation Tool: Design and produce a prototype directional drilling navigation tool capable of high temperature operation in geothermal drilling Accuracies of 0.1° Inclination and Tool Face, 0.5° Azimuth Environmental Ruggedness typical of existing oil/gas drilling Multiple Selectable Sensor Ranges High accuracy for navigation, low bandwidth High G-range & bandwidth for Stick-Slip and Chirp detection Selectable serial data communications Reduce cost of drilling in high temperature Geothermal reservoirs Innovative aspects of project Honeywell MEMS* Vibrating Beam Accelerometers (VBA) APS Flux-gate Magnetometers Honeywell Silicon-On-Insulator (SOI) High-temperature electronics Rugged High-temperature capable package and assembly process

High-quality Silicon Films Prepared by Zone-melting Recrystallization

NASA Technical Reports Server (NTRS)

Chen, C. K.; Geis, M. W.; Tsaur, B. Y.; Fan, J. C. C.

1984-01-01

The graphite strip heater zone melting recrystallization (ZMR) technique is described. The material properties of the ZMR films, and SOI device results are reviewed. Although our ZMR work is primarily motivated by integrated circuit applications, this work evolved in part from earlier research on laser crystallization of thick amorphous GaAs and Si films, which was undertaken with the goal of producing low cost photovoltaic materials. The ZMR growth process and its effect on the properties of the recrystallized films may contribute some insight to a general understanding of the rapid recrystallization of Si for solar cells. Adaptation of ZMR for solar cell fabrication is considered.

CCSDS Time-Critical Onboard Networking Service

NASA Technical Reports Server (NTRS)

Parkes, Steve; Schnurr, Rick; Marquart, Jane; Menke, Greg; Ciccone, Massimiliano

2006-01-01

The Consultative Committee for Space Data Systems (CCSDS) is developing recommendations for communication services onboard spacecraft. Today many different communication buses are used on spacecraft requiring software with the same basic functionality to be rewritten for each type of bus. This impacts on the application software resulting in custom software for almost every new mission. The Spacecraft Onboard Interface Services (SOIS) working group aims to provide a consistent interface to various onboard buses and sub-networks, enabling a common interface to the application software. The eventual goal is reusable software that can be easily ported to new missions and run on a range of onboard buses without substantial modification. The system engineer will then be able to select a bus based on its performance, power, etc and be confident that a particular choice of bus will not place excessive demands on software development. This paper describes the SOIS Intra-Networking Service which is designed to enable data transfer and multiplexing of a variety of internetworking protocols with a range of quality of service support, over underlying heterogeneous data links. The Intra-network service interface provides users with a common Quality of Service interface when transporting data across a variety of underlying data links. Supported Quality of Service (QoS) elements include: Priority, Resource Reservation and Retry/Redundancy. These three QoS elements combine and map into four TCONS services for onboard data communications: Best Effort, Assured, Reserved, and Guaranteed. Data to be transported is passed to the Intra-network service with a requested QoS. The requested QoS includes the type of service, priority and where appropriate, a channel identifier. The data is de-multiplexed, prioritized, and the required resources for transport are allocated. The data is then passed to the appropriate data link for transfer across the bus. The SOIS supported data links may inherently provide the quality of service support requested by the intra-network layer. In the case where the data link does not have the required level of support, the missing functionality is added by SOIS. As a result of this architecture, re-usable software applications can be designed and used across missions thereby promoting common mission operations. In addition, the protocol multiplexing function enables the blending of multiple onboard networks. This paper starts by giving an overview of the SOIS architecture in section 11, illustrating where the TCONS services fit into the overall architecture. It then describes the quality of service approach adopted, in section III. The prototyping efforts that have been going on are introduced in section JY. Finally, in section V the current status of the CCSDS recommendations is summarized.

A New Holocene Lake Sediment Archive from Samoa (Tropical South Pacific) Reveals Millennial Scale Changes in Hydroclimate.

NASA Astrophysics Data System (ADS)

Sear, D. A.; Hassall, J. D.; Langdon, P. G.; Croudace, I. W. C.; Maloney, A. E.; Sachs, J. P.

2015-12-01

El Niño-Southern Oscillation (ENSO) is the strongest source of interannual climate variability on the planet. Its behaviour leads to major hydro-climate impacts around the world, including flooding, drought, and altering cyclone frequency. Simulating ENSO behaviour is difficult using climate models, as it is a complex non-linear system, and hence predicting its future variability under changing climate is challenging. Using palaeoclimate data thus allows an insight into long-term ENSO behaviour against a range of different forcings throughout the Holocene. To date long, coherent, high resolution records from lake sediment archives have been limited to the Pacific Rim. We present new data from the closed crater Lake Lanoto'o, on Upolu Island, Samoa, located within the tropical South Pacific. The lake sediment record extends back into the early Holocene with an average sedimentation rate 0.4mm a-1. We demonstrate a strong correspondence between precipitation at the study site and measures of the Southern Oscillation Index (SOI)1. We compare geochemical proxies of precipitation to a long-term reconstruction of the SOI2. The resulting proxy SOI record extends over the last 9000 years, revealing scales of change in ENSO that match those recorded from sites located on the Pacific rim3,4. A major period of La-Nina dominance occurs around 4.5ka BP before abruptly switching to El-Nino dominance around 3.2ka. Thereafter, phases of El-Nino - La Nina dominance, alternate every c. 400yrs. The results point to prolonged phases of enhanced or reduced precipitation - conditions that may influence future population resilience to climate change, and may also have been triggers for the colonisation of more remote eastern Polynesia. 1. http://www.cgd.ucar.edu/cas/catalog/climind/SOI.signal.annstd.ascii. 2. Yan, H. et al. (2011) Nature Geoscience, 4, p.611. 3. Conroy J. L. et al. (2008) Quaternary Science Reviews, 27, p.1166 4. Moy, C. M. et al. (2002) Nature, 420, p.162

Culpabilité chez les enfants victimes d’agression sexuelle : Le rôle médiateur des stratégies d’évitement sur l’anxiété et l’estime de soi

PubMed Central

Gauthier-Duchesne, Amélie; Hébert, Martine; Daspe, Marie-Ève

2017-01-01

Résumé Des études antérieures relèvent que le sentiment de culpabilité est un facteur associé aux répercussions de l’agression sexuelle (AS) chez les survivants adultes (Cantón-Cortés, Cantón, Justicia et Cortés, 2011). Toutefois, très peu d’études ont exploré le rôle potentiel du sentiment de culpabilité sur les symptômes chez les enfants victimes. L’objectif de cette recherche est d’étudier le rôle médiateur de l’évitement dans la relation entre le sentiment de culpabilité et les symptômes associés à l’AS (anxiété et estime de soi). L’échantillon est composé de 447 enfants victimes d'AS (319 filles et 128 garçons), âgés de 6 à 12 ans. Les résultats des analyses acheminatoires indiquent que les enfants révélant davantage de culpabilité par rapport à la situation d’AS présentent un niveau plus élevé d’anxiété et une plus faible estime d’eux-mêmes. Un effet indirect a également été observé et montre que le sentiment de culpabilité est lié à l’utilisation de stratégies d’évitement, qui en retour exacerbent les symptômes d’anxiété et contribuent à une plus faible estime de soi. Le modèle, qui s’ajuste aux données de manière équivalente pour les filles et les garçons, permet d’expliquer 24,4 % de la variance des symptômes d’anxiété et 11,2 % de la variance de l’estime de soi. Ces résultats laissent entendre que le sentiment de culpabilité pourrait constituer une cible d’intervention pertinente pour les enfants victimes d’AS. PMID:29445251

Seismic Study of the Solar Interior: Inferences from SOI/MDI Observations During Solar Activity

NASA Technical Reports Server (NTRS)

Korzennik, Sylvain G.; Wagner, William J. (Technical Monitor)

2001-01-01

We have continued in collaboration with Dr. Eff-Darwich (University of La Laguna, Tenerife, Spain) the study of the structure, asphericity and dynamics of the solar interior from p-mode frequencies and frequency splittings. In March 2001, Dr. Eff-Darwich came for 3 weeks visit to CfA. During this visit we completed our work on the inversion of the internal solar rotation rate, and submitted a paper describing this work to the Astrophysical Journal. This paper has been recently revised in response to the referee comments and I expect that it will be accepted for publication very soon. We also have analyzed helioseismic data looking for temporal variations of the solar stratification near the base of the convection zone. We have expanded on the initial work that was presented at the SOHO-10/GONG-2000 meeting (October 2000, Tenerife), and are in the process of writing this up. Substantial progress towards the characterization of high-degree p-modes has been achieved. Indeed, in collaboration Dr. Rabello-Soares (Stanford University), we have gained a clear conceptual understanding of the various elements that affect the leakage matrix of the SOI/MDI instrument. This was presented in an invited talk at the SOHO-10/GONG-2000 meeting (October 2000, Tenerife). Once we will have successfully migrated from a qualitative to a quantitative assessment of these effects, we should be able to generate high-degree p-modes frequencies so crucial in the diagnostic of the layers just below solar surface.

Wavelength tunable MEMS VCSELs for OCT imaging

NASA Astrophysics Data System (ADS)

Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa; Semenova, Elizaveta; Hansen, Ole; Yvind, Kresten

2018-02-01

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.

Enhanced biosensing resolution with foundry fabricated individually addressable dual-gated ISFETs.

PubMed

Duarte-Guevara, Carlos; Lai, Fei-Lung; Cheng, Chun-Wen; Reddy, Bobby; Salm, Eric; Swaminathan, Vikhram; Tsui, Ying-Kit; Tuan, Hsiao Chin; Kalnitsky, Alex; Liu, Yi-Shao; Bashir, Rashid

2014-08-19

The adaptation of semiconductor technologies for biological applications may lead to a new era of inexpensive, sensitive, and portable diagnostics. At the core of these developing technologies is the ion-sensitive field-effect transistor (ISFET), a biochemical to electrical transducer with seamless integration to electronic systems. We present a novel structure for a true dual-gated ISFET that is fabricated with a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor process by Taiwan Semiconductor Manufacturing Company (TSMC). In contrast to conventional SOI ISFETs, each transistor has an individually addressable back-gate and a gate oxide that is directly exposed to the solution. The elimination of the commonly used floating gate architecture reduces the chance of electrostatic discharge and increases the potential achievable transistor density. We show that when operated in a "dual-gate" mode, the transistor response can exhibit sensitivities to pH changes beyond the Nernst limit. This enhancement in sensitivity was shown to increase the sensor's signal-to-noise ratio, allowing the device to resolve smaller pH changes. An improved resolution can be used to enhance small signals and increase the sensor accuracy when monitoring small pH dynamics in biological reactions. As a proof of concept, we demonstrate that the amplified sensitivity and improved resolution result in a shorter detection time and a larger output signal of a loop-mediated isothermal DNA amplification reaction (LAMP) targeting a pathogenic bacteria gene, showing benefits of the new structure for biosensing applications.

Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

NASA Astrophysics Data System (ADS)

Hsieh, I.-Wei

In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic devices are quite different from those of electronic devices. Minimizing propagation losses by reducing sidewall roughness to nanometer scale over a device length of several millimeters or even centimeters has prompted researchers in academia and industry to refine the fabrication process. Chapter 3 of this thesis summarizes our efforts in fabricating silicon photonic devices using standard CMOS technology. Chapter 4 describes the characterization of nonlinear effects, including self-phase modulation (SPM), cross-phase modulation (XPM), and supercontinuum generation in silicon-wire waveguides. Silicon-wire waveguides are strip waveguides with submicron transverse dimensions, which allow strong light confinement inside the silicon core. This strong optical confinement, in addition to the large third-order nonlinear optical susceptibility of crystalline silicon, leads to a net nonlinearity which is several orders of magnitude higher than the nonlinearity of silica fiber. Significant nonlinear effects can be observed and characterized over a device length of only several millimeters in silicon wires with very small input power. These effects provide opportunities for engineers to design active silicon photonic devices which are compact and energy-efficient. Chapter 5 presents a realization of an integrated SOI optical isolator, which is a critical yet often overlooked component in photonic integrated circuits. This study shows the feasibility to make a hybrid garnet/SOI active device with very promising results. Finally, Chapter 6 summarizes our demonstration of transmitting terabit-scale data streams in silicon-wire waveguides, which is an important first-step towards enabling intra-chip interconnection networks with ultra-high bandwidths. Although the scope of this thesis is limited to providing only fractional views of the whole silicon photonics area, it provides enough references for interested readers to conduct further literature research in other aspects of silicon photonics. It is the author's hope that the thesis would convey to its readers the significance and potential of this exciting emerging technology.

High-speed thin-film transistors on single-crystalline, unstrained- and strained-silicon-based nanomembranes

NASA Astrophysics Data System (ADS)

Yuan, Hao-Chih

This research focuses on developing high-performance single-crystal Si-based nanomembranes and high-frequency thin-film transistors (TFTs) using these nanomembranes on flexible plastic substrates. Unstrained Si or SiGe nanomembranes with thickness of several tens to a couple of hundred nanometers are derived from silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) and are subsequently transferred and integrated with flexible plastic host substrates via a one-step dry printing technique. Biaxial tensile-strained Si membranes that utilize elastic strain-sharing between Si and additionally grown SiGe thin films are also successfully integrated with plastic host substrates and exhibit predicted strain status and negligible density of dislocations. Biaxial tensile strain enhances electron mobility and lowers Schottky contact resistance. As a result, flexible TFTs built on the strained Si-membranes demonstrate much higher electron effective mobility and higher drive current than the unstrained counterpart. The dependence of drive current and transconductance on uniaxial tensile strain introducing by mechanical bending is also discussed. A novel combined "hot-and-cold" TFT fabrication process is developed specifically for realizing a wide spectrum of micro-electronics that can exhibit RF performance and can be integrated on low-temperature plastic substrate. The "hot" process that consists of ion implant and high-temperature annealing for desired doping type, profile, and concentration is realized on the bulk SOI/SGOI substrates followed by the "cold" process that includes room-temperature silicon-monoxide (SiO) deposition as gate dielectric layer to ensure the process compatibility with low-temperature, low-cost plastics. With these developments flexible Si-membrane n-type RF TFTs for analog applications and complementary TFTs for digital applications are demonstrated for the first time. RF TFTs with 1.5-mum channel length have demonstrated record-high f T and fmax values of 2.04 and 7.8 GHz, respectively. A small-signal equivalent circuit model study on the RF TFTs reveals the physics of how device layout affects fT and f max, which paves the way for further performance optimization and realization of integrated circuit on flexible substrate in the future.

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

NASA Astrophysics Data System (ADS)

Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

2013-05-01

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

Enhancement of coupling ratios in SOI based asymmetrical optical directional couplers

NASA Astrophysics Data System (ADS)

Pendam, Nagaraju; Vardhani, Chunduru Parvatha

2017-11-01

A novel design of slab structured asymmetrical optical directional coupler with S-bend waveguides on silicon-on-insulator (SOI) platform has been designed by using R-Soft CAD tool. Beam propagation method (BPM) is used for light propagation analysis. The simulation results of asymmetrical optical directional couplers are reported. We find that the asymmetrical directional coupler has lower coupling ratios and higher extinction ratios with waveguide parameters such as width, wavelength, waveguide spacing, and coupling length. Simulation results designate that the coupling efficiency for transverse electric (TE) and transverse magnetic (TM) modes can reach about more than 95% and extinction ratio about 6 dB when the coupling length is 6 mm for both the polarization modes and insertion loss is 17 dB with same coupling length 6 mm at central wavelength 1550 nm.

Absence of spontaneous magnetic order of lattice spins coupled to itinerant interacting electrons in one and two dimensions.

PubMed

Loss, Daniel; Pedrocchi, Fabio L; Leggett, Anthony J

2011-09-02

We extend the Mermin-Wagner theorem to a system of lattice spins which are spin coupled to itinerant and interacting charge carriers. We use the Bogoliubov inequality to rigorously prove that neither (anti-) ferromagnetic nor helical long-range order is possible in one and two dimensions at any finite temperature. Our proof applies to a wide class of models including any form of electron-electron and single-electron interactions that are independent of spin. In the presence of Rashba or Dresselhaus spin-orbit interactions (SOI) magnetic order is not excluded and intimately connected to equilibrium spin currents. However, in the special case when Rashba and Dresselhaus SOIs are tuned to be equal, magnetic order is excluded again. This opens up a new possibility to control magnetism electrically.

Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures

NASA Astrophysics Data System (ADS)

Ihara, S.; Andreev, A.; Williams, D. A.; Kodera, T.; Oda, S.

2015-07-01

We report on fabrication and transport properties of lithographically defined single quantum dots (QDs) in single electron transistors with ultrathin silicon-on-insulator (SOI) substrate. We observed comparatively large charging energy E C ˜ 20 meV derived from the stability diagram at a temperature of 4.2 K. We also carried out three-dimensional calculations of the capacitance matrix and transport properties through the QD for the real structure geometry and found an excellent quantitative agreement with experiment of the calculated main parameters of stability diagram (charging energy, period of Coulomb oscillations, and asymmetry of the diamonds). The obtained results confirm fabrication of well-defined integrated QDs as designed with ultrathin SOI that makes it possible to achieve relatively large QD charging energies, which is useful for stable and high temperature operation of single electron devices.

A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

NASA Astrophysics Data System (ADS)

Ramezani, Zeinab; Orouji, Ali A.

2018-03-01

In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

Orthotopic Implantation of Intact Tumor Tissue Leads to Metastasis of OCUM-2MD3 Human Gastric Cancer in Nude Mice Visualized in Real Time by Intravital Fluorescence Imaging.

PubMed

Murakami, Takashi; Zhang, Yong; Wang, Xiaoen; Hiroshima, Yukihiko; Kasashima, Hiroaki; Yashiro, Masakazu; Hirakawa, Kosei; Miwa, Atsushi; Kiyuna, Tasuku; Matsuyama, Ryusei; Tanaka, Kuniya; Bouvet, Michael; Endo, Itaru; Hoffman, Robert M

2016-05-01

Orthotopic (literally "correct place") implantation of cancer in nude mice has long been known to be superior to subcutaneous transplantation because the orthotopic tumor can metastasize. We reported previously on surgical orthotopic implantation (SOI) of gastric cancer tissue in nude mice resulting in the formation of metastases in 100% of the mice with extensive primary growth to the regional lymph nodes, liver, and lung. In contrast, when cell suspensions were used to inject gastric cancer cells orthotopically, metastases occurred in only 6.7% of the mice with local tumor formation, emphasizing the importance of orthotopically implanting intact tissue to allow full expression of metastatic potential. However, the different behavior of tumors implanted orthotopically by the two methods has not been visualized in real time. OCUM-2MD3 human gastric cancer cells labeled with the fluorescent protein Azami-Green were implanted orthotopically as cells or tissue in nude mice. Orthotopic implantation of cells resulted in local spread on the stomach. In contrast, SOI of tumor tissue of OCUM-2MD3 resulted in vessel spread of the Azami-Green-expressing cancer cells. Metastasis was also observed in the left lobe of the liver after SOI. These results demonstrate the physiological importance of intact cancer tissue for orthotopic implantation in order for tumors to properly grow and express their metastatic potential. Copyright© 2016 International Institute of Anticancer Research (Dr. John G. Delinassios), All rights reserved.

A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

NASA Astrophysics Data System (ADS)

Shrestha, Sumeet; Kamehama, Hiroki; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2015-08-01

This paper presents a low-noise wide-dynamic-range pixel design for a high-energy particle detector in astronomical applications. A silicon on insulator (SOI) based detector is used for the detection of wide energy range of high energy particles (mainly for X-ray). The sensor has a thin layer of SOI CMOS readout circuitry and a thick layer of high-resistivity detector vertically stacked in a single chip. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. The event detection circuit consisting of a comparator and logic circuits which detect the incidence of high energy particle categorizes the incident photon it into two energy groups using an appropriate energy threshold and generate a two-bit code for an event and energy level. The code for energy level is then used for selection of the gain of the in-pixel amplifier for the detected signal, providing a function of high-dynamic-range signal measurement. The two-bit code for the event and energy level is scanned in the event scanning block and the signals from the hit pixels only are read out. The variable-gain in-pixel amplifier uses a continuous integrator and integration-time control for the variable gain. The proposed design allows the small signal detection and wide dynamic range due to the adaptive gain technique and capability of correlated double sampling (CDS) technique of kTC noise canceling of the charge detector.

Spin-orbit tuned metal-insulator transitions in single-crystal Sr₂Ir 1–xRh xO₄ (0≤x≤1)

DOE PAGES

Qi, T. F.; Korneta, O. B.; Li, L.; ...

2012-09-06

Sr₂IrO₄ is a magnetic insulator driven by spin-orbit interaction (SOI) whereas the isoelectronic and isostructural Sr₂RhO₄ is a paramagnetic metal. The contrasting ground states have been shown to result from the critical role of the strong SOI in the iridate. Our investigation of structural, transport, magnetic, and thermal properties reveals that substituting 4d Rh⁴⁺ (4d⁵) ions for 5d Ir⁴⁺ (5d⁵) ions in Sr₂IrO₄ directly reduces the SOI and rebalances the competing energies so profoundly that it generates a rich phase diagram for Sr₂Ir 1–xRh xO₄ featuring two major effects: (1) Light Rh doping (0 ≤ x ≤ 0.16) prompts amore » simultaneous and precipitous drop in both the electrical resistivity and the magnetic ordering temperature TC, which is suppressed to zero at x = 0.16 from 240 K at x = 0. (2) However, with heavier Rh doping [0.24 < x < 0.85 (±0.05)] disorder scattering leads to localized states and a return to an insulating state with spin frustration and exotic magnetic behavior that only disappears near x = 1. The intricacy of Sr₂Ir 1–xRh xO₄ is further highlighted by comparison with Sr₂Ir 1–xRu xO₄ where Ru⁴⁺ (4d⁴) drives a direct crossover from the insulating to metallic states.« less

A global analysis of the asymmetric effect of ENSO on extreme precipitation

NASA Astrophysics Data System (ADS)

Sun, Xun; Renard, Benjamin; Thyer, Mark; Westra, Seth; Lang, Michel

2015-11-01

The global and regional influence of the El Niño-Southern Oscillation (ENSO) phenomenon on extreme precipitation was analyzed using a global database comprising over 7000 high quality observation sites. To better quantify possible changes in relatively rare design-relevant precipitation quantiles (e.g. the 1 in 10 year event), a Bayesian regional extreme value model was used, which employed the Southern Oscillation Index (SOI) - a measure of ENSO - as a covariate. Regions found to be influenced by ENSO include parts of North and South America, southern and eastern Asia, South Africa, Australia and Europe. The season experiencing the greatest ENSO effect varies regionally, but in most of the ENSO-affected regions the strongest effect happens in boreal winter, during which time the 10-year precipitation for |SOI| = 20 (corresponding to either a strong El Niño or La Niña episode) can be up to 50% higher or lower than for SOI = 0 (a neutral phase). Importantly, the effect of ENSO on extreme precipitation is asymmetric, with most parts of the world experiencing a significant effect only for a single ENSO phase. This finding has important implications on the current understanding of how ENSO influences extreme precipitation, and will enable a more rigorous theoretical foundation for providing quantitative extreme precipitation intensity predictions at seasonal timescales. We anticipate that incorporating asymmetric impacts of ENSO on extreme precipitation will help lead to better-informed climate-adaptive design of flood-sensitive infrastructure.

A 320-year AMM+SOI Index Reconstruction from Historical Atlantic Tropical Cyclone Records

NASA Astrophysics Data System (ADS)

Chenoweth, M.; Divine, D.

2010-12-01

Trends in the frequency of North Atlantic tropical cyclones, including major hurricanes, are dominated by those originating in the deep tropics. In addition, these tropical cyclones are stronger when making landfall and their total power dissipation is higher than storms forming elsewhere in the Atlantic basin. Both the Atlantic Meridional Mode (AMM) and El Nino-Southern Oscillation (ENSO) are the leading modes of coupled air-sea interaction in the Atlantic and Pacific, respectively, and have well-established relationships with Atlantic hurricane variability. Here we use a 320-year record of tropical cyclone activity in the Lesser Antilles region of the North Atlantic from historical manuscript and newspaper records to reconstruct a normalized seasonal (July-October) index combining the Southern Oscillation Index (SOI) and AMM employing both the modern analog technique and back-propagation artificial neural networks. Our results indicate that the AMM+SOI index since 1690 shows no long-term trend but is dominated by both short-term (<10 years) and long-term (quasi-decadal to bi-decadal) variations. The decadal-scale variation is consistent with both instrumental and proxy records elsewhere from the global tropics. Distinct periods of high and low index values, corresponding to high and low tropical cyclone frequency, are regularly-appearing features in the record and provides further evidence that natural decadal -scale variability in Atlantic tropical cyclone frequency must be accounted for when determining trends in records and attribution of climate change.

Zero-group-velocity acoustic waveguides for high-frequency resonators

NASA Astrophysics Data System (ADS)

Caliendo, C.; Hamidullah, M.

2017-11-01

The propagation of the Lamb-like modes along a silicon-on-insulator (SOI)/AlN thin supported structure was simulated in order to exploit the intrinsic zero group velocity (ZGV) features to design electroacoustic resonators that do not require metal strip gratings or suspended edges to confine the acoustic energy. The ZGV resonant conditions in the SOI/AlN composite plate, i.e. the frequencies where the mode group velocity vanishes while the phase velocity remains finite, were investigated in the frequency range from few hundreds of MHz up to 1900 MHz. Some ZGV points were found that show up mostly in low-order modes. The thermal behaviour of these points was studied in the  -30 to 220 °C temperature range and the temperature coefficients of the ZGV resonant frequencies (TCF) were estimated. The behaviour of the ZGV resonators operating as gas sensors was studied under the hypothesis that the surface of the device is covered with a thin polyisobutylene (PIB) film able to selectively adsorb dichloromethane (CH2Cl2), trichloromethane (CHCl3), carbontetrachloride (CCl4), tetrachloroethylene (C2Cl4), and trichloroethylene (C2HCl3), at atmospheric pressure and room temperature. The sensor sensitivity to gas concentration in air was simulated for the first four ZGV points of the inhomogeneous plate. The feasibility of high-frequency, low TCF electroacoustic micro-resonator based on SOI and piezoelectric thin film technology was demonstrated by the present simulation study.

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

NASA Astrophysics Data System (ADS)

Yan-Hui, Zhang; Jie, Wei; Chao, Yin; Qiao, Tan; Jian-Ping, Liu; Peng-Cheng, Li; Xiao-Rong, Luo

2016-02-01

A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD > 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079).

Mixed logic style adder circuit designed and fabricated using SOI substrate for irradiation-hardened experiment

NASA Astrophysics Data System (ADS)

Yuan, Shoucai; Liu, Yamei

2016-08-01

This paper proposed a rail to rail swing, mixed logic style 28-transistor 1-bit full adder circuit which is designed and fabricated using silicon-on-insulator (SOI) substrate with 90 nm gate length technology. The main goal of our design is space application where circuits may be damaged by outer space radiation; so the irradiation-hardened technique such as SOI structure should be used. The circuit's delay, power and power-delay product (PDP) of our proposed gate diffusion input (GDI)-based adder are HSPICE simulated and compared with other reported high-performance 1-bit adder. The GDI-based 1-bit adder has 21.61% improvement in delay and 18.85% improvement in PDP, over the reported 1-bit adder. However, its power dissipation is larger than that reported with 3.56% increased but is still comparable. The worst case performance of proposed 1-bit adder circuit is also seen to be less sensitive to variations in power supply voltage (VDD) and capacitance load (CL), over a wide range from 0.6 to 1.8 V and 0 to 200 fF, respectively. The proposed and reported 1-bit full adders are all layout designed and wafer fabricated with other circuits/systems together on one chip. The chip measurement and analysis has been done at VDD = 1.2 V, CL = 20 fF, and 200 MHz maximum input signal frequency with temperature of 300 K.

Real data assimilation for optimization of frictional parameters and prediction of afterslip in the 2003 Tokachi-oki earthquake inferred from slip velocity by an adjoint method

NASA Astrophysics Data System (ADS)

Kano, Masayuki; Miyazaki, Shin'ichi; Ishikawa, Yoichi; Hiyoshi, Yoshihisa; Ito, Kosuke; Hirahara, Kazuro

2015-10-01

Data assimilation is a technique that optimizes the parameters used in a numerical model with a constraint of model dynamics achieving the better fit to observations. Optimized parameters can be utilized for the subsequent prediction with a numerical model and predicted physical variables are presumably closer to observations that will be available in the future, at least, comparing to those obtained without the optimization through data assimilation. In this work, an adjoint data assimilation system is developed for optimizing a relatively large number of spatially inhomogeneous frictional parameters during the afterslip period in which the physical constraints are a quasi-dynamic equation of motion and a laboratory derived rate and state dependent friction law that describe the temporal evolution of slip velocity at subduction zones. The observed variable is estimated slip velocity on the plate interface. Before applying this method to the real data assimilation for the afterslip of the 2003 Tokachi-oki earthquake, a synthetic data assimilation experiment is conducted to examine the feasibility of optimizing the frictional parameters in the afterslip area. It is confirmed that the current system is capable of optimizing the frictional parameters A-B, A and L by adopting the physical constraint based on a numerical model if observations capture the acceleration and decaying phases of slip on the plate interface. On the other hand, it is unlikely to constrain the frictional parameters in the region where the amplitude of afterslip is less than 1.0 cm d-1. Next, real data assimilation for the 2003 Tokachi-oki earthquake is conducted to incorporate slip velocity data inferred from time dependent inversion of Global Navigation Satellite System time-series. The optimized values of A-B, A and L are O(10 kPa), O(102 kPa) and O(10 mm), respectively. The optimized frictional parameters yield the better fit to the observations and the better prediction skill of slip velocity afterwards. Also, further experiment shows the importance of employing a fine-mesh model. It will contribute to the further understanding of the frictional properties on plate interfaces and lead to the forecasting system that provides useful information on the possibility of consequent earthquakes.

Native backfill materials for mechanically stabilized earth walls.

DOT National Transportation Integrated Search

2005-01-01

Mechanically stabilized earth walls are an attractive alternative to conventional reinforced concrete retaining walls. The economy of these walls for non-critical applications might be improved by using alternative backfills consisting of on-site soi...

THE DIRT ON SOILS

EPA Science Inventory

This keynote presentation will provide basic information regarding the physical, chemical, and biological importance of soils to 50 second grade teachers within the Cincinnati Public School System as part of a Hamilton County Department of Environmenatl Services Sois Workshop.

Euschoengastia suzukii (Acari: Trombiculidae): A new species of chigger mite collected from soil samples in the nest burrows of streaked shearwater in Japan.

PubMed

Takahashi, Mamoru; Fukaya, Hajime; Takahashi, Hisae

2005-07-01

Euschoengastia suzukii Takahashi, Fukaya & Takahashi is described and illustrated. The type material was collected from soil samples in the nest burrows of the sea bird streaked shearwater, Calonectris leucomelas (Temminck), living on Mikurajima Island in Tokyo; Oomorijima Island, Oki, Shimane Prefecture; and Awashima Island, Niigata Prefecture, in Japan, indicating that C. leucomelas is the main parasitic host of E. suzukii new species.

JPRS Report, Science and Technology: Europe Twenty-Fourth ISATA International Symposium on Automotive Technology and Automation.

DTIC Science & Technology

1991-09-05

Traffic and Driving and Y Ishii, Oki Electric Industry, Japan " Mazda Car Communication System" Mazda Car Corporation , FRG IMPROVING TRAFFIC FLOW... Strategy to Reduce 151 Blocking-Back During Oversaturation using the Microsimulation Model Nemis" S Shepherd, Institute for Transport Studies, UK 910085...J Garber, C W Lynn and W S Ferguson, University of Virginia, USA 910087 "Ramp Metering Strategies for Motorways Incorporating Dynamic 177 Origin

Development of high efficiency thin film polycrystalline silicon solar cells using VEST process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishihara, T.; Arimoto, S.; Morikawa, H.

1998-12-31

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films (VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1) quality of Si films, (2) back surface emitter (BSE), (3) front surface emitter etch-back process, (4) back surface field (BSF) layer thickness and its resistivity, and (5) defect passivation by hydrogen implantation. As a result of experiments, the authors have achieved 16% efficiency (V{sub oc}:0.589V, J{sub sc}:35.6mA/cm{sup 2}, F,F:0.763)more » with a cell size of 95.8cm{sup 2} and the thickness of 77 {micro}m. It is the highest efficiency ever reported for large area thin film Si solar cells.« less

Magnitude Dependent Seismic Quiescence of 2008 Wenchuan Earthquake

NASA Astrophysics Data System (ADS)

Suyehiro, K.; Sacks, S. I.; Takanami, T.; Smith, D. E.; Rydelek, P. A.

2014-12-01

The change in seismicity leading to the Wenchuan Earthquake in 2008 (Mw 7.9) has been studied by various authors based on statistics and/or pattern recognitions (Huang, 2008; Yan et al., 2009; Chen and Wang, 2010; Yi et al., 2011). We show, in particular, that the magnitude-dependent seismic quiescence is observed for the Wenchuan earthquake and that it adds to other similar observations. Such studies on seismic quiescence prior to major earthquakes include 1982 Urakawa-Oki earthquake (M 7.1) (Taylor et al., 1992), 1994 Hokkaido-Toho-Oki earthquake (Mw=8.2) (Takanami et al., 1996), 2011 Tohoku earthquake (Mw=9.0) (Katsumata, 2011). Smith and Sacks (2013) proposed a magnitude-dependent quiescence based on a physical earthquake model (Rydelek and Sacks, 1995) and demonstrated the quiescence can be reproduced by the introduction of "asperities" (dilantacy hardened zones). Actual observations indicate the change occurs in a broader area than the eventual earthquake fault zone. In order to accept the explanation, we need to verify the model as the model predicts somewhat controversial features of earthquakes such as the magnitude dependent stress drop at lower magnitude range or the dynamically appearing asperities and repeating slips in some parts of the rupture zone. We show supportive observations. We will also need to verify the dilatancy diffusion to be taking place. So far, we only seem to have indirect evidences, which need to be more quantitatively substantiated.

Observation of aftershocks of the 2003 Tokachi-Oki earthquake for estimation of local site effects

NASA Astrophysics Data System (ADS)

Yamanaka, Hiroaki; Motoki, Kentaro; Etoh, Kiminobu; Murayama, Masanari; Komaba, Nobuhiko

2004-03-01

Observation of aftershocks of the 2003 Tokachi-Oki earthquake was conducted in the southern part of the Tokachi basin in Hokkaido, Japan for estimation of local site effects. We installed accelerographs at 12 sites in Chokubetsu, Toyokoro, and Taiki areas, where large strong motion records were obtained during the main shock at stations of the K-NET and KiK-net. The stations of the aftershock observation are situated with different geological conditions and some of the sites were installed on Pleistocene layers as reference sites. The site amplifications are investigated using spectral ratio of S-waves from the aftershocks. The S-wave amplification factor is dominant at a period of about 1 second at the site near the KiK-net site in Toyokoro. This amplification fits well with calculated 1D amplification of S-wave in alluvial layers with a thickness of 50 meters. In addition to the site effects, we detected nonlinear amplification of the soft soils only during the main shock. The site effects at the strong motion site of the K-NET at Chokubetsu have a dominate peak at a period of 0.4 seconds. This amplification is due to soft soils having a thickness of about 13 meters. Contrary to the results at the two areas, site effects are not significantly different at the stations in the Taiki area, because of similarity on surface geological conditions.