Television-optical operational amplifier.

PubMed

Goetz, J; Häusler, G; Sesselmann, R

1979-08-15

The advantages of negative feedback are well known in electronics and extensively used in the operational amplifier. The properties of such a system are nearly independent of the parameters in the forward branch of the system; they are only determined by external elements in the backward branch. An optical analog of such an operational amplifier is reported. The essential operations, amplifications, and inversion of the circulating signals are carried out using a TV system. The capability of the system to compensate for spatial inhomogeneities and for nonlinearities is demonstrated. In addition, the system is able to create the inverse of a transfer function located in the feedback branch.

High transconductance organic electrochemical transistors

NASA Astrophysics Data System (ADS)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-07-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

High transconductance organic electrochemical transistors

PubMed Central

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-01-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

High-gain cryogenic amplifier assembly employing a commercial CMOS operational amplifier.

PubMed

Proctor, J E; Smith, A W; Jung, T M; Woods, S I

2015-07-01

We have developed a cryogenic amplifier for the measurement of small current signals (10 fA-100 nA) from cryogenic optical detectors. Typically operated with gain near 10(7) V/A, the amplifier performs well from DC to greater than 30 kHz and exhibits noise level near the Johnson limit. Care has been taken in the design and materials to control heat flow and temperatures throughout the entire detector-amplifier assembly. A simple one-board version of the amplifier assembly dissipates 8 mW to our detector cryostat cold stage, and a two-board version can dissipate as little as 17 μW to the detector cold stage. With current noise baseline of about 10 fA/(Hz)(1/2), the cryogenic amplifier is generally useful for cooled infrared detectors, and using blocked impurity band detectors operated at 10 K, the amplifier enables noise power levels of 2.5 fW/(Hz)(1/2) for detection of optical wavelengths near 10 μm.

Limit circuit prevents overdriving of operational amplifier

NASA Technical Reports Server (NTRS)

Openshaw, F. L.

1967-01-01

Cutoff-type high gain amplifier coupled by a diode prevents overdriving of operational amplifier. An amplified feedback signal offsets the excess input signal that tends to cause the amplifier to exceed its preset limit. The output is, therfore, held to the set clamp level.

A low-voltage sense amplifier with two-stage operational amplifier clamping for flash memory

NASA Astrophysics Data System (ADS)

Guo, Jiarong

2017-04-01

A low-voltage sense amplifier with reference current generator utilizing two-stage operational amplifier clamp structure for flash memory is presented in this paper, capable of operating with minimum supply voltage at 1 V. A new reference current generation circuit composed of a reference cell and a two-stage operational amplifier clamping the drain pole of the reference cell is used to generate the reference current, which avoids the threshold limitation caused by current mirror transistor in the traditional sense amplifier. A novel reference voltage generation circuit using dummy bit-line structure without pull-down current is also adopted, which not only improves the sense window enhancing read precision but also saves power consumption. The sense amplifier was implemented in a flash realized in 90 nm flash technology. Experimental results show the access time is 14.7 ns with power supply of 1.2 V and slow corner at 125 °C. Project supported by the National Natural Science Fundation of China (No. 61376028).

Continuous-time ΣΔ ADC with implicit variable gain amplifier for CMOS image sensor.

PubMed

Tang, Fang; Bermak, Amine; Abbes, Amira; Benammar, Mohieddine Amor

2014-01-01

This paper presents a column-parallel continuous-time sigma delta (CTSD) ADC for mega-pixel resolution CMOS image sensor (CIS). The sigma delta modulator is implemented with a 2nd order resistor/capacitor-based loop filter. The first integrator uses a conventional operational transconductance amplifier (OTA), for the concern of a high power noise rejection. The second integrator is realized with a single-ended inverter-based amplifier, instead of a standard OTA. As a result, the power consumption is reduced, without sacrificing the noise performance. Moreover, the variable gain amplifier in the traditional column-parallel read-out circuit is merged into the front-end of the CTSD modulator. By programming the input resistance, the amplitude range of the input current can be tuned with 8 scales, which is equivalent to a traditional 2-bit preamplification function without consuming extra power and chip area. The test chip prototype is fabricated using 0.18 μm CMOS process and the measurement result shows an ADC power consumption lower than 63.5 μW under 1.4 V power supply and 50 MHz clock frequency.

Operational amplifier with adjustable frequency response.

PubMed

Gulisek, D; Hencek, M

1978-01-01

The authors describe an operational amplifier with an adjustable frequency response and its use in membrane physiology, using the voltage clamp and current clamp method. The amplifier eliminates feedback poles causing oscillation. It consists of a follower with a high input resistance in the form of a tube and of an actual amplifier with an adjustable frequency response allowing the abolition of clicks by one pole and of oscillation by two poles in the 500 Hz divided by infinity range. Further properties of the amplifier: a long-term voltage drift of 1 mv, a temperature voltage drift of 0.5 mv/degrees K, input resistance greater than 1 GOhm, amplification greater than 80 dB, output +/- 12 v, 25 ma, noise, measured from the width of the oscilloscope track in the presence of a ray of normal brightness, not exceeding 50 muv in the 0-250 kHz band, f1 = 1 MHz. A short report on the amplifier was published a few years ago (Gulísek and Hencek 1973).

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Energy efficient low-noise neural recording amplifier with enhanced noise efficiency factor.

PubMed

Majidzadeh, V; Schmid, A; Leblebici, Y

2011-06-01

This paper presents a neural recording amplifier array suitable for large-scale integration with multielectrode arrays in very low-power microelectronic cortical implants. The proposed amplifier is one of the most energy-efficient structures reported to date, which theoretically achieves an effective noise efficiency factor (NEF) smaller than the limit that can be achieved by any existing amplifier topology, which utilizes a differential pair input stage. The proposed architecture, which is referred to as a partial operational transconductance amplifier sharing architecture, results in a significant reduction of power dissipation as well as silicon area, in addition to the very low NEF. The effect of mismatch on crosstalk between channels and the tradeoff between noise and crosstalk are theoretically analyzed. Moreover, a mathematical model of the nonlinearity of the amplifier is derived, and its accuracy is confirmed by simulations and measurements. For an array of four neural amplifiers, measurement results show a midband gain of 39.4 dB and a -3-dB bandwidth ranging from 10 Hz to 7.2 kHz. The input-referred noise integrated from 10 Hz to 100 kHz is measured at 3.5 μVrms and the power consumption is 7.92 μW from a 1.8-V supply, which corresponds to NEF = 3.35. The worst-case crosstalk and common-mode rejection ratio within the desired bandwidth are - 43.5 dB and 70.1 dB, respectively, and the active silicon area of each amplifier is 256 μm × 256 μm in 0.18-μm complementary metal-oxide semiconductor technology.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Study of IEMP Effects on IC Operational Amplifier Circuits

DTIC Science & Technology

1975-12-10

plasma focus to study their IEMP responses with and without superposition of TREE responses. The 30-kJ plasma focus device produced photons primarily in the 8- to 100-keV range with pulse widths typically in the range of 10 to 15 nsec. Pulses of electrons were also deposited on the external leads of the operational amplifiers to determine the characteristic responses. These units were operated in circuits with closed-loop gains ranging from 5 to 100. During direct irradiation of the operational amplifiers, it was found that the IEMP responses (caused

Wide-Temperature-Range Integrated Operational Amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Levanas, Greg; Chen, Yuan; Kolawa, Elizabeth; Cozy, Raymond; Blalock, Benjamin; Greenwell, Robert; Terry, Stephen

2007-01-01

A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

Amplifier circuit operable over a wide temperature range

DOEpatents

Kelly, Ronald D.; Cannon, William L.

1979-01-01

An amplifier circuit having stable performance characteristics over a wide temperature range from approximately 0.degree. C up to as high as approximately 500.degree. C, such as might be encountered in a geothermal borehole. The amplifier utilizes ceramic vacuum tubes connected in directly coupled differential amplifier pairs having a common power supply and a cathode follower output stage. In an alternate embodiment, for operation up to 500.degree. C, positive and negative power supplies are utilized to provide improved gain characteristics, and all electrical connections are made by welding. Resistor elements in this version of the invention are specially heat treated to improve their stability with temperature.

Operational Amplifier Experiments for the Chemistry Laboratory.

ERIC Educational Resources Information Center

Braun, Robert D.

1996-01-01

Provides details of experiments that deal with the use of operational amplifiers and are part of a course in instrumental analysis. These experiments are performed after the completion of a set of electricity and electronics experiments. (DDR)

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

Stable Extraction of Threshold Voltage Using Transconductance Change Method for CMOS Modeling, Simulation and Characterization

NASA Astrophysics Data System (ADS)

Choi, Woo Young; Woo, Dong-Soo; Choi, Byung Yong; Lee, Jong Duk; Park, Byung-Gook

2004-04-01

We proposed a stable extraction algorithm for threshold voltage using transconductance change method by optimizing node interval. With the algorithm, noise-free gm2 (=dgm/dVGS) profiles can be extracted within one-percent error, which leads to more physically-meaningful threshold voltage calculation by the transconductance change method. The extracted threshold voltage predicts the gate-to-source voltage at which the surface potential is within kT/q of φs=2φf+VSB. Our algorithm makes the transconductance change method more practical by overcoming noise problem. This threshold voltage extraction algorithm yields the threshold roll-off behavior of nanoscale metal oxide semiconductor field effect transistor (MOSFETs) accurately and makes it possible to calculate the surface potential φs at any other point on the drain-to-source current (IDS) versus gate-to-source voltage (VGS) curve. It will provide us with a useful analysis tool in the field of device modeling, simulation and characterization.

Self-amplified CMOS image sensor using a current-mode readout circuit

NASA Astrophysics Data System (ADS)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface.

PubMed

Yu, Zhanghao; Yang, Xi; Chung, SungWon

2018-01-29

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal-oxide-semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900- μ m 2 chip area and achieves 0.022-2.78-MHz unity gain bandwidth and over 65 ∘ phase margin with a load capacitance of 0.1-15 nF. The prototype amplifier consumes 7.6 μ W from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption.

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface

PubMed Central

Yang, Xi

2018-01-01

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal–oxide–semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900-μm2 chip area and achieves 0.022–2.78-MHz unity gain bandwidth and over 65∘ phase margin with a load capacitance of 0.1–15 nF. The prototype amplifier consumes 7.6 μW from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption. PMID:29382183

Kilowatt high-efficiency narrow-linewidth monolithic fiber amplifier operating at 1034 nm

NASA Astrophysics Data System (ADS)

Naderi, Nader A.; Flores, Angel; Anderson, Brian M.; Rowland, Ken; Dajani, Iyad

2016-03-01

Power scaling investigation of a narrow-linewidth, Ytterbium-doped all-fiber amplifier operating at 1034 nm is presented. Nonlinear stimulated Brillouin scattering (SBS) effects were suppressed through the utilization of an external phase modulation technique. Here, the power amplifier was seeded with a spectrally broadened master oscillator and the results were compared using both pseudo-random bit sequence (PRBS) and white noise source (WNS) phase modulation formats. By utilizing an optical band pass filter as well as optimizing the length of fiber used in the pre-amplifier stages, we were able to appreciably suppress unwanted amplified spontaneous emission (ASE). Notably, through PRBS phase modulation, greater than two-fold enhancement in threshold power was achieved when compared to the WNS modulated case. Consequently, by further optimizing both the power amplifier length and PRBS pattern at a clock rate of 3.5 GHz, we demonstrated 1 kilowatt of power with a slope efficiency of 81% and an overall ASE content of less than 1%. Beam quality measurements at 1 kilowatt provided near diffraction-limited operation (M2 < 1.2) with no sign of modal instability. To the best of our knowledge, the power scaling results achieved in this work represent the highest power reported for a spectrally narrow all-fiber amplifier operating at < 1040 nm in Yb-doped silica-based fiber.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Optimal Operation of a Josephson Parametric Amplifier for Vacuum Squeezing

NASA Astrophysics Data System (ADS)

Malnou, M.; Palken, D. A.; Vale, Leila R.; Hilton, Gene C.; Lehnert, K. W.

2018-04-01

A Josephson parametric amplifier (JPA) can create squeezed states of microwave light, lowering the noise associated with certain quantum measurements. We experimentally study how the JPA's pump influences the phase-sensitive amplification and deamplification of a coherent tone's amplitude when that amplitude is commensurate with vacuum fluctuations. We predict and demonstrate that, by operating the JPA with a single current pump whose power is greater than the value that maximizes gain, the amplifier distortion is reduced and, consequently, squeezing is improved. Optimizing the singly pumped JPA's operation in this fashion, we directly observe 3.87 ±0.03 dB of vacuum squeezing over a bandwidth of 30 MHz.

A Design of Terahertz Parallel Plate Dielectric Waveguide with Signal Line inserted for Ballistic Deflection Transistor Travelling Wave Amplifier

NASA Astrophysics Data System (ADS)

Wang, H.; Knepper, R.; Hossain, N.; Marthi, P.; Milithaler, J.-F.; Margala, M.

2017-10-01

In this paper a new waveguide design is proposed to be implemented as part of Ballistic Deflection Transistor (BDT) Traveling Wave Amplifier Design. The BDT is designed to be operated in the Terahertz regime. Due to its relatively low transconductance (gm=200µA/V), the entire structure will consist of ten stages, with 15 BDTs/stage, to reach a total gain of 30mA/V. In this case, the total length of the transmission line will be more than 400µm. We did the investigation for different structures and materials of the transmission line. For our Parallel Plate Dielectric Waveguide with Signal Line inserted (PPDWS) design, we are able to get an average loss of 0.46dB/mm at 0.8-1.4THz from ANSYS HFSS simulation. The return loss for input and output are better than -20dB at 0.8-1.7THz. Although it is designed for our future travelling wave amplifier, it can also be used for various other THz frequency applications.

A nonlinear macromodel of the bipolar integrated circuit operational amplifier for electromagnetic interference analysis

NASA Astrophysics Data System (ADS)

Chen, G. K. C.

1981-06-01

A nonlinear macromodel for the bipolar transistor integrated circuit operational amplifier is derived from the macromodel proposed by Boyle. The nonlinear macromodel contains only two nonlinear transistors in the input stage in a differential amplifier configuration. Parasitic capacitance effects are represented by capacitors placed at the collectors and emitters of the input transistors. The nonlinear macromodel is effective in predicting the second order intermodulation effect of operational amplifiers in a unity gain buffer amplifier configuration. The nonlinear analysis computer program NCAP is used for the analysis. Accurate prediction of demodulation of amplitude modulated RF signals with RF carrier frequencies in the 0.05 to 100 MHz range is achieved. The macromodel predicted results, presented in the form of second order nonlinear transfer function, come to within 6 dB of the full model predictions for the 741 type of operational amplifiers for values of the second order transfer function greater than -40 dB.

Bismuth-doped fibre amplifier operating between 1600 and 1800 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Firstov, S V; Alyshev, S V; Riumkin, K E

2015-12-31

We report the first bismuth-doped fibre amplifier operating between 1600 and 1800 nm, which utilises bidirectional pumping (co-propagating and counter-propagating pump beams) by laser diodes at a wavelength of 1550 nm. The largest gain coefficient of the amplifier is 23 dB, at a wavelength of 1710 nm. It has a noise figure of 7 dB, 3-dB gain bandwidth of 40 nm and gain efficiency of 0.1 dB mW{sup -1}. (letters)

Noise behavior of microwave amplifiers operating under nonlinear conditions

NASA Astrophysics Data System (ADS)

Escotte, L.; Gonneau, E.; Chambon, C.; Graffeuil, J.

2005-12-01

B The noise behavior of microwave amplifiers operating under a large-signal condition has been studied in this paper. A Gaussian noise is added to a microwave signal and they are applied at the input of several amplifying devices. Experimental data show a decrease of the output noise spectral density when the power of the microwave signal at the input of the devices increases due to the compression of the amplifiers. A distortion component due to the interaction of the signal and its harmonics with the noise is also demonstrated from a simplified theoretical model. The statistical properties of the signal and the noise have also been investigated in order to verify the Gaussianity of the noise at the output of the nonlinear circuits. We have also observed that the majority of the measured devices show some variations of their additive noise versus the input power level.

Low noise tuned amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L. L. (Inventor)

1984-01-01

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Ultra-low noise miniaturized neural amplifier with hardware averaging.

PubMed

Dweiri, Yazan M; Eggers, Thomas; McCallum, Grant; Durand, Dominique M

2015-08-01

Peripheral nerves carry neural signals that could be used to control hybrid bionic systems. Cuff electrodes provide a robust and stable interface but the recorded signal amplitude is small (<3 μVrms 700 Hz-7 kHz), thereby requiring a baseline noise of less than 1 μVrms for a useful signal-to-noise ratio (SNR). Flat interface nerve electrode (FINE) contacts alone generate thermal noise of at least 0.5 μVrms therefore the amplifier should add as little noise as possible. Since mainstream neural amplifiers have a baseline noise of 2 μVrms or higher, novel designs are required. Here we apply the concept of hardware averaging to nerve recordings obtained with cuff electrodes. An optimization procedure is developed to minimize noise and power simultaneously. The novel design was based on existing neural amplifiers (Intan Technologies, LLC) and is validated with signals obtained from the FINE in chronic dog experiments. We showed that hardware averaging leads to a reduction in the total recording noise by a factor of 1/√N or less depending on the source resistance. Chronic recording of physiological activity with FINE using the presented design showed significant improvement on the recorded baseline noise with at least two parallel operation transconductance amplifiers leading to a 46.1% reduction at N = 8. The functionality of these recordings was quantified by the SNR improvement and shown to be significant for N = 3 or more. The present design was shown to be capable of generating <1.5 μVrms total recording baseline noise when connected to a FINE placed on the sciatic nerve of an awake animal. An algorithm was introduced to find the value of N that can minimize both the power consumption and the noise in order to design a miniaturized ultralow-noise neural amplifier. These results demonstrate the efficacy of hardware averaging on noise improvement for neural recording with cuff electrodes, and can accommodate the presence of high source impedances that are

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

NASA Astrophysics Data System (ADS)

Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

2016-12-01

The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

Statistics for demodulation RFI in inverting operational amplifier circuits

NASA Astrophysics Data System (ADS)

Sutu, Y.-H.; Whalen, J. J.

An investigation was conducted with the objective to determine statistical variations for RFI demodulation responses in operational amplifier (op amp) circuits. Attention is given to the experimental procedures employed, a three-stage op amp LED experiment, NCAP (Nonlinear Circuit Analysis Program) simulations of demodulation RFI in 741 op amps, and a comparison of RFI in four op amp types. Three major recommendations for future investigations are presented on the basis of the obtained results. One is concerned with the conduction of additional measurements of demodulation RFI in inverting amplifiers, while another suggests the employment of an automatic measurement system. It is also proposed to conduct additional NCAP simulations in which parasitic effects are accounted for more thoroughly.

Reduced Power Laser Designation Systems

DTIC Science & Technology

2009-01-10

buffering of the input stage; comparing the noise performance of the candidate amplifier designs; selection of the two-transistor bootstrap design as the...circuit of choice; and comparing the performance of this circuit against that of a basic transconductance amplifier . 15. SUBJECT TERMS Laser...Guided Weapons; Laser designation; laser rangefinders; infrared photodiodes; transconductance amplifiers . 16. SECURITY CLASSIFICATION OF: a. REPORT U

Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.

2016-02-01

An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.

Hybrid matrix amplifier

DOEpatents

Martens, J.S.; Hietala, V.M.; Plut, T.A.

1995-01-03

The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N[times]M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise. 6 figures.

Hybrid matrix amplifier

DOEpatents

Martens, Jon S.; Hietala, Vincent M.; Plut, Thomas A.

1995-01-01

The present invention comprises a novel matrix amplifier. The matrix amplifier includes an active superconducting power divider (ASPD) having N output ports; N distributed amplifiers each operatively connected to one of the N output ports of the ASPD; and a power combiner having N input ports each operatively connected to one of the N distributed amplifiers. The distributed amplifier can included M stages of amplification by cascading superconducting active devices. The power combiner can include N active elements. The resulting (N.times.M) matrix amplifier can produce signals of high output power, large bandwidth, and low noise.

Cryogenic ultra-low power dissipation operational amplifiers with GaAs JFETs

NASA Astrophysics Data System (ADS)

Hibi, Yasunori; Matsuo, Hiroshi; Ikeda, Hirokazu; Fujiwara, Mikio; Kang, Lin; Chen, Jian; Wu, Peiheng

2016-01-01

To realize a multipixel camera for astronomical observation, we developed cryogenic multi-channel readout systems using gallium arsenide junction field-effect transistor (GaAs JFET) integrated circuits (ICs). Based on our experience with these cryogenic ICs, we designed, manufactured, and demonstrated operational amplifiers requiring four power supplies and two voltage sources. The amplifiers operate at 4.2 K with an open-loop gain of 2000. The gain-bandwidth product can expect 400 kHz at a power dissipation of 6 μW. In performance evaluations, the input-referred voltage noise was 4 μVrms/Hz0.5 at 1 Hz and 30 nVrms/Hz0.5 at 10 kHz, respectively. The noise power spectrum density was of type 1/f and extended to 10 kHz.

Noise and noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode

NASA Astrophysics Data System (ADS)

Wen, Pengyue; Sanchez, Michael; Gross, Matthias; Esener, Sadik C.

2003-05-01

In this paper, the noise properties of vertical cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode are studied. Expressions for noise sources contributing to the total noise detected at amplifier output are derived, based on the photon statistics master equations. The noise figure, defined as the degradation of signal-to-noise ratio (SNR), is analyzed using the assumption that spontaneous emission-signal beat noise dominates. The analysis shows that the noise figure of reflection mode VCSOAs has the same values as that in transmission mode as long as amplifier gain is high (G>>1). Furthermore, simulations depict the dependence of noise figure on device parameters and bias conditions, as well as reveal the importance of the low reflectivity front mirror and the high reflectivity rear mirror for low noise operation. In addition, the noise figure analysis results are compared with experimental measurements, in which amplified spontaneous emission (ASE) power is measured by an optical spectrum analyzer and the noise figure is obtained from the ASE power and the amplifier gain. The measured data are in good agreement with the theoretical predictions.

Vertical Charge Transport and Negative Transconductance in Multilayer Molybdenum Disulfides.

PubMed

Liu, Yuan; Guo, Jian; He, Qiyuan; Wu, Hao; Cheng, Hung-Chieh; Ding, Mengning; Shakir, Imran; Gambin, Vincent; Huang, Yu; Duan, Xiangfeng

2017-09-13

Negative transconductance (NTC) devices have been heavily investigated for their potential in low power logical circuit, memory, oscillating, and high-speed switching applications. Previous NTC devices are largely attributed to two working mechanisms: quantum mechanical tunneling, and mobility degradation at high electrical field. Herein we report a systematic investigation of charge transport in multilayer two-dimensional semiconductors (2DSCs) with optimized van der Waals contact and for the first time demonstrate NTC and antibipolar characteristics in multilayer 2DSCs (such as MoS 2 , WSe 2 ). By varying the measurement temperature, bias voltage, and body thickness, we found the NTC behavior can be attributed to a vertical potential barrier in the multilayer 2DSCs and the competing mechanisms between intralayer lateral transport and interlayer vertical transport, thus representing a new working mechanism for NTC operation. Importantly, this vertical potential barrier arises from inhomogeneous carrier distribution in 2DSC from the near-substrate region to the bulk region, which is in contrast to conventional semiconductors with homogeneous doping defined by bulk dopants. We further show that the unique NTC behavior can be explored for creating frequency doublers and phase shift keying circuits with only one transistor, greatly simplifying the circuit design compared to conventional technology.

High stability amplifier

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1983-01-01

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Linear-log counting-rate meter uses transconductance characteristics of a silicon planar transistor

NASA Technical Reports Server (NTRS)

Eichholz, J. J.

1969-01-01

Counting rate meter compresses a wide range of data values, or decades of current. Silicon planar transistor, operating in the zero collector-base voltage mode, is used as a feedback element in an operational amplifier to obtain the log response.

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

The practical operational-amplifier gyrator circuit for inductorless filter synthesis

NASA Technical Reports Server (NTRS)

Sutherland, W. C.

1976-01-01

A literature is reported for gyrator circuits utilizing operational amplifiers as the active device. A gyrator is a two port nonreciprocal device with the property that the input impedance is proportional to the reciprocal of the load impedance. Following an experimental study, the gyrator circuit with optimum properties was selected for additional testing. A theoretical analysis was performed and compared to the experimental results for excellent agreement.

Rail-to-rail differential input amplification stage with main and surrogate differential pairs

DOEpatents

Britton, Jr., Charles Lanier; Smith, Stephen Fulton

2007-03-06

An operational amplifier input stage provides a symmetrical rail-to-rail input common-mode voltage without turning off either pair of complementary differential input transistors. Secondary, or surrogate, transistor pairs assume the function of the complementary differential transistors. The circuit also maintains essentially constant transconductance, constant slew rate, and constant signal-path supply current as it provides rail-to-rail operation.

Theory, Design and Operation of a High-Power Second - Gyro-Twt Amplifier.

NASA Astrophysics Data System (ADS)

Wang, Qinsong

1995-01-01

Based on the cyclotron resonance maser (CRM) instability, the gyrotron traveling wave tube (gyro-TWT) amplifier is an efficient high power microwave and millimeter wave coherent radiation source. As evidenced in previous experiments, gyro-TWTs, however, can be very susceptible to spontaneous oscillations, and their output powers have thus been limited to relatively low levels. In this dissertation work, thorough theoretical and experimental studies have been conducted to demonstrate and confirm a novel "marginal stability design" (MSD) concept that a harmonic gyro-TWT amplifier is more stable to spontaneous oscillation than a fundamental harmonic gyro-TWT amplifier. Since their interactions are, in general, weaker and allow higher levels of electron beam current, harmonic gyro-TWTs can yield, in principle, a significantly higher RF output power than a fundamental gyro-TWT. The study results also show that a magnetron injection gun (MIG) type electron beam is applicable to harmonic gyro-TWTs. A complete analytic linear theory employing Laplace transforms and a three dimensional nonlinear theory using a slow time-scale formalism are developed in Chapt. 2 for the general CRM interaction to address the issue of stability. Two designs were developed to demonstrate the MSD procedure. The design and development of the proof -of-principle experiment are discussed in Chapt. 3. The accompanying cold test results indicate that all the components have met their respective design goals. The RF diagnostic circuit employed to characterize the gyro-TWT amplifier is also described. Chapter 4 presents the hot-test results of the second-harmonic TE_{21} gyro-TWT amplifier experiment in which an 80 kV, 20 A MIG beam with alpha(equivupsilon _|/upsilon_|) = 1 was used to generate a peak RF output power of 207 kW in Ku-band with an efficiency of 12.9%. In addition, the saturated gain is 16 dB, the small signal gain is 22 dB, the measured bandwidth is 2.1%, and the amplifier was zero

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2010-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2011-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Aoki, Ichiro (Inventor); Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor)

2013-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Cross-differential amplifier

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Kee, Scott D. (Inventor); Aoki, Ichiro (Inventor)

2008-01-01

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Log amplifier with pole-zero compensation

DOEpatents

Brookshier, William

1987-01-01

A logarithmic amplifier circuit provides pole-zero compensation for improved stability and response time over 6-8 decades of input signal frequency. The amplifier circuit includes a first operational amplifier with a first feedback loop which includes a second, inverting operational amplifier in a second feedback loop. The compensated output signal is provided by the second operational amplifier with the log elements, i.e., resistors, and the compensating capacitors in each of the feedback loops having equal values so that each break point or pole is offset by a compensating break point or zero.

High transconductance zinc oxide thin-film transistors on flexible plastic substrates

NASA Astrophysics Data System (ADS)

Kimura, Yuta; Higaki, Tomohiro; Maemoto, Toshihiko; Sasa, Shigehiko; Inoue, Masataka

2012-02-01

We report the fabrication and characterization on high-performance ZnO based TFTs on unheated plastic substrate. ZnO films were grown by pulsed laser deposition (PLD) on polyethylene napthalate (PEN) substrates. Top-gate ZnO-TFTs were fabricated by photolithography and wet chemical etching. The source and drain contacts were formed by lift-off of e-beam deposited Ti(20 nm)/Au(200 nm). An HfO2 with thickness 100 nm was selected as the gate insulator, and top gate electrode Ti(20 nm)/Au(200 nm) was deposited by e-beam evaporation. We prepared a set of the structure with SiO2/TiO2 to investigate the characteristic changes that appear in the film characteristics in response to bending. From the ID-VDS and the transfer characteristics which are affected by bending and return for the ZnO-TFT with SiO2/TiO2 buffers, the TFTs were bent to a curvature radius of 8.5 mm. The transconductance, gm is obtained 1.7 mS/mm on flat, 1.4 mS/mm on bending and 1.3 mS/mm on returning the film, respectively. The ID-VDS characteristics were therefore not changed by bending. All of the devices exhibited a clear pinch-off behavior and a high on/off current ratio of ˜10^6. The threshold voltages, Vth were not changed drastically. Furthermore, TFT structures were changed from a conventional top-gate type to a bottom-gate type. A high transconductance of 95.8 mS/mm was achieved in the bottom-gate type TFT by using Al2O3 oxide buffer.

Synergistic effect of mixed neutron and gamma irradiation in bipolar operational amplifier OP07

NASA Astrophysics Data System (ADS)

Yan, Liu; Wei, Chen; Shanchao, Yang; Xiaoming, Jin; Chaohui, He

2016-09-01

This paper presents the synergistic effects in bipolar operational amplifier OP07. The radiation effects are studied by neutron beam, gamma ray, and mixed neutron/gamma ray environments. The characterateristics of the synergistic effects are studied through comparison of different experiment results. The results show that the bipolar operational amplifier OP07 exhibited significant synergistic effects in the mixed neutron and gamma irradiation. The bipolar transistor is identified as the most radiation sensitive unit of the operational amplifier. In this paper, a series of simulations are performed on bipolar transistors in different radiation environments. In the theoretical simulation, the geometric model and calculations based on the Medici toolkit are built to study the radiation effects in bipolar components. The effect of mixed neutron and gamma irradiation is simulated based on the understanding of the underlying mechanisms of radiation effects in bipolar transistors. The simulated results agree well with the experimental data. The results of the experiments and simulation indicate that the radiation effects in the bipolar devices subjected to mixed neutron and gamma environments is not a simple combination of total ionizing dose (TID) effects and displacement damage. The data suggests that the TID effect could enhance the displacement damage. The synergistic effect should not be neglected in complex radiation environments.

Log amplifier with pole-zero compensation

DOEpatents

Brookshier, W.

1985-02-08

A logarithmic amplifier circuit provides pole-zero compensation for improved stability and response time over 6-8 decades of input signal frequency. The amplifer circuit includes a first operational amplifier with a first feedback loop which includes a second, inverting operational amplifier in a second feedstock loop. The compensated output signal is provided by the second operational amplifier with the log elements, i.e., resistors, and the compensating capacitors in each of the feedback loops having equal values so that each break point is offset by a compensating break point or zero.

Digital automatic gain amplifier

NASA Technical Reports Server (NTRS)

Holley, L. D.; Ward, J. O. (Inventor)

1978-01-01

A circuit is described for adjusting the amplitude of a reference signal to a predetermined level so as to permit subsequent data signals to be interpreted correctly. The circuit includes an operational amplifier having a feedback circuit connected between an output terminal and an input terminal; a bank of relays operably connected to a plurality of resistors; and a comparator comparing an output voltage of the amplifier with a reference voltage and generating a compared signal responsive thereto. Means is provided for selectively energizing the relays according to the compared signal from the comparator until the output signal from the amplifier equals to the reference signal. A second comparator is provided for comparing the output of the amplifier with a second voltage source so as to illuminate a lamp when the output signal from the amplifier exceeds the second voltage.

A compact nanopower low output impedance CMOS operational amplifier for wireless intraocular pressure recordings.

PubMed

Dresher, Russell P; Irazoqui, Pedro P

2007-01-01

Wireless sensing has shown potential benefits for the continuous-time measurement of physiological data. One such application is the recording of intraocular pressure (IOP) for patients with glaucoma. Ultra-low-power circuits facilitate the use of inductively-coupled power for implantable wireless systems. Compact circuit size is also desirable for implantable systems. As a first step towards the realization of such circuits, we have designed a compact, ultra-low-power operational amplifier which can be used to record IOP. This paper presents the measured results of a CMOS operational amplifier that can be incorporated with a wireless IOP monitoring system or other low-power application. It has a power consumption of 736 nW, chip area of 0.023 mm2, and output impedance of 69 Omega to drive low-impedance loads.

Low-Noise Band-Pass Amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1982-01-01

Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

Amplifier improvement circuit

NASA Technical Reports Server (NTRS)

Sturman, J.

1968-01-01

Stable input stage was designed for the use with a integrated circuit operational amplifier to provide improved performance as an instrumentation-type amplifier. The circuit provides high input impedance, stable gain, good common mode rejection, very low drift, and low output impedance.

High-Efficiency Microwave Power Amplifier

NASA Technical Reports Server (NTRS)

Sims, Williams H.

2005-01-01

A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages

A single supply biopotential amplifier.

PubMed

Spinelli, E M; Martinez, N H; Mayosky, M A

2001-04-01

A biopotential amplifier for single supply operation is presented. It uses a Driven Right Leg Circuit (DRL) to drive the patient's body to a DC common mode voltage, centering biopotential signals with respect to the amplifier's input voltage range. This scheme ensures proper range operation when a single power supply is used. The circuit described is especially suited for low consumption, battery-powered applications, requiring a single battery and avoiding switching voltage inverters to achieve dual supplies. The generic circuit is described and, as an example, a biopotential amplifier with a gain of 60 dB and a DC input range of +/-200 mV was implemented using low power operational amplifiers. A Common Mode Rejection Ratio (CMRR) of 126 dB at 50 Hz was achieved without trimming.

Improved-Bandwidth Transimpedance Amplifier

NASA Technical Reports Server (NTRS)

Chapsky, Jacob

2009-01-01

The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

NASA Astrophysics Data System (ADS)

Riyan, Wang; Jiwei, Huang; Zhengping, Li; Weifeng, Zhang; Longyue, Zeng

2012-03-01

A CMOS RF front-end for the long-term evolution (LTE) direct conversion receiver is presented. With a low noise transconductance amplifier (LNA), current commutating passive mixer and transimpedance operational amplifier (TIA), the RF front-end structure enables high-integration, high linearity and simple frequency planning for LTE multi-band applications. Large variable gain is achieved using current-steering transconductance stages. A current commutating passive mixer with 25% duty-cycle LO improves gain, noise and linearity. A direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer. Fabricated in a 0.13-μm CMOS process, the RF front-end achieves a 45 dB conversion voltage gain, 2.7 dB NF, -7 dBm IIP3, and +60 dBm IIP2 with calibration from 2.3 to 2.7 GHz. The total RF front end with divider draws 40 mA from a single 1.2-V supply.

Multi-pass amplifier architecture for high power laser systems

DOEpatents

Manes, Kenneth R; Spaeth, Mary L; Erlandson, Alvin C

2014-04-01

A main amplifier system includes a first reflector operable to receive input light through a first aperture and direct the input light along an optical path. The input light is characterized by a first polarization. The main amplifier system also includes a first polarizer operable to reflect light characterized by the first polarization state. The main amplifier system further includes a first and second set of amplifier modules. Each of the first and second set of amplifier modules includes an entrance window, a quarter wave plate, a plurality of amplifier slablets arrayed substantially parallel to each other, and an exit window. The main amplifier system additionally includes a set of mirrors operable to reflect light exiting the first set of amplifier modules to enter the second set of amplifier modules and a second polarizer operable to reflect light characterized by a second polarization state.

Improved Grid-Array Millimeter-Wave Amplifier

NASA Technical Reports Server (NTRS)

Rosenberg, James J.; Rutledge, David B.; Smith, R. Peter; Weikle, Robert

1993-01-01

Improved grid-array amplifiers operating at millimeter and submillimeter wavelengths developed for use in communications and radar. Feedback suppressed by making input polarizations orthogonal to output polarizations. Amplifier made to oscillate by introducing some feedback. Several grid-array amplifiers concatenated to form high-gain beam-amplifying unit.

High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slivken, S.; Sengupta, S.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu

2015-12-21

Wide electrical tuning and high continuous output power is demonstrated from a single mode quantum cascade laser emitting at a wavelength near 4.8 μm. This is achieved in a space efficient manner by integrating an asymmetric sampled grating distributed feedback tunable laser with an optical amplifier. An initial demonstration of high peak power operation in pulsed mode is demonstrated first, with >5 W output over a 270 nm (113 cm{sup −1}) spectral range. Refinement of the geometry leads to continuous operation with a single mode spectral coverage of 300 nm (120 cm{sup −1}) and a maximum continuous power of 1.25 W. The output beam is shown tomore » be nearly diffraction-limited, even at high amplifier current.« less

Portable musical instrument amplifier

DOEpatents

Christian, David E.

1990-07-24

The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

High input impedance amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L.

1995-01-01

High input impedance amplifiers are provided which reduce the input impedance solely to a capacitive reactance, or, in a somewhat more complex design, provide an extremely high essentially infinite, capacitive reactance. In one embodiment, where the input impedance is reduced in essence, to solely a capacitive reactance, an operational amplifier in a follower configuration is driven at its non-inverting input and a resistor with a predetermined magnitude is connected between the inverting and non-inverting inputs. A second embodiment eliminates the capacitance from the input by adding a second stage to the first embodiment. The second stage is a second operational amplifier in a non-inverting gain-stage configuration where the output of the first follower stage drives the non-inverting input of the second stage and the output of the second stage is fed back to the non-inverting input of the first stage through a capacitor of a predetermined magnitude. These amplifiers, while generally useful, are very useful as sensor buffer amplifiers that may eliminate significant sources of error.

Electrospun amplified fiber optics.

PubMed

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

LOGARITHMIC AMPLIFIER

DOEpatents

Wade, E.J.; Stone, R.S.

1959-03-10

Electronic,amplifier circuits, especially a logai-ithmic amplifier characterizxed by its greatly improved strability are discussed. According to the in ention, means are provided to feed bach the output valtagee to a diode in the amplifier input circuit, the diode being utilized to produce the logarithmic characteristics. The diode is tics, The diode isition therewith and having its filament operated from thc same source s the filament of the logarithmic diode. A bias current of relatively large value compareii with the signal current is continuously passed through the compiting dioie to render the diode insensitivy to variations in the signal current. by this odes kdu to variaelled, so that the stability of the amlifier will be unimpaired.

Amplifiers in the radio-electronic equipment of aircraft

NASA Astrophysics Data System (ADS)

Khol'Nyi, Vladimir Ia.

The applications, classification, and technical specifications of airborne electronic amplifiers are discussed. Particular attention is given to the general design and principles of operation of single amplification cascades and multicascade amplifiers, including dc, audio, and video amplifiers used as part of the radio-electronic equipment of modern aircraft. The discussion also covers the principal technical and performance characteristics of various amplifiers, their operating conditions, service, and repair.

Hybrid thin-film amplifier

NASA Technical Reports Server (NTRS)

Cleveland, G.

1977-01-01

Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

Isolated thermocouple amplifier system for stirred fixed-bed gasifier

DOEpatents

Fasching, George E.

1992-01-01

A sensing system is provided for determining the bed temperature profile of the bed of a stirred, fixed-bed gasifier including a plurality of temperature sensors for sensing the bed temperature at different levels, a transmitter for transmitting data based on the outputs of the sensors to a remote operator's station, and a battery-based power supply. The system includes an isolation amplifier system comprising a plurality of isolation amplifier circuits for amplifying the outputs of the individual sensors. The isolation amplifier circuits each comprise an isolation operational amplifier connected to a sensor; a first "flying capacitor" circuit for, in operation, controlling the application of power from the power supply to the isolation amplifier; an output sample and hold circuit connected to the transmitter; a second "flying capacitor" circuit for, in operation, controlling the transfer of the output of the isolation amplifier to the sample and hold circuit; and a timing and control circuit for activating the first and second capacitor circuits in a predetermined timed sequence.

Meter circuit for tuning RF amplifiers

NASA Technical Reports Server (NTRS)

Longthorne, J. E.

1973-01-01

Circuit computes and indicates efficiency of RF amplifier as inputs and other parameters are varied. Voltage drop across internal resistance of ammeter is amplified by operational amplifier and applied to one multiplier input. Other input is obtained through two resistors from positive terminal of power supply.

Power-Amplifier Module for 145 to 165 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Peralta, Alejandro

2007-01-01

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

Matched wideband low-noise amplifiers for radio astronomy.

PubMed

Weinreb, S; Bardin, J; Mani, H; Jones, G

2009-04-01

Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range.

Preamplifiers for non-contact capacitive biopotential measurements.

PubMed

Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F

2013-01-01

Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35 um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF--typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF.

A low-power CMOS operational amplifier IC for a heterogeneous paper-based potentiostat

NASA Astrophysics Data System (ADS)

Bezuidenhout, P.; Land, K.; Joubert, T.-H.

2016-02-01

Electrochemical biosensing is used to detect specific analytes in fluids, such as bacterial and chemical contaminants. A common implementation of an electrochemical readout is a potentiostat, which usually includes potentiometric, amperometric, and impedimetric detection. Recently several researchers have developed small, low-cost, single-chip silicon-based potentiostats. With the advances in heterogeneous integration technology, low-power potentiostats can be implemented on paper and similar low cost substrates. This paper deals with the design of a low-power paper-based amperometric front-end for a low-cost and rapid detection environment. In amperometric detection a voltage signal is provided to a sensor system, while a small current value generated by an electrochemical redox reaction in the system is measured. In order to measure low current values, the noise of the circuit must be minimized, which is accomplished with a pre-amplification front-end stage, typically designed around an operational amplifier core. An appropriate circuit design for a low-power and low-cost amperometric front-end is identified, taking the heterogeneous integration of various components into account. The operational amplifier core is on a bare custom CMOS chip, which will be integrated onto the paper substrate alongside commercial off-the-shelf electronic components. A general-purpose low-power two-stage CMOS amplifier circuit is designed and simulated for the ams 350 nm 5 V process. After the layout design and verification, the IC was submitted for a multi-project wafer manufacturing run. The simulated results are a bandwidth of 2.4 MHz, a common-mode rejection ratio of 70.04 dB, and power dissipation of 0.154 mW, which are comparable with the analytical values.

Photonic-band-gap gyrotron amplifier with picosecond pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.

Here, we report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gainmore » is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260–800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.« less

Photonic-band-gap gyrotron amplifier with picosecond pulses

DOE PAGES

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; ...

2017-12-05

Here, we report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gainmore » is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260–800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.« less

Crystal oscillators using negative voltage gain, single pole response amplifiers

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L. (Inventor)

1989-01-01

A simple and inexpensive crystal oscillator is provided which employs negative voltage gain, single pole response amplifiers. The amplifiers may include such configurations as gate inverters, operational amplifiers and conventional bipolar transistor amplifiers, all of which operate at a frequency which is on the roll-off portion of their gain versus frequency curve. Several amplifier feedback circuit variations are employed to set desired bias levels and to allow the oscillator to operate at the crystal's fundamental frequency or at an overtone of the fundamental frequency. The oscillator is made less expensive than comparable oscillators by employing relatively low frequency amplifiers and operating them at roll-off, at frequencies beyond which they are customarily used. Simplicity is provided because operation at roll-off eliminates components ordinarily required in similar circuits to provide sufficient phase-shift in the feedback circuitry for oscillation to occur.

Simple two-electrode biosignal amplifier.

PubMed

Dobrev, D; Neycheva, T; Mudrov, N

2005-11-01

A simple, cost effective circuit for a two-electrode non-differential biopotential amplifier is proposed. It uses a 'virtual ground' transimpedance amplifier and a parallel RC network for input common mode current equalisation, while the signal input impedance preserves its high value. With this innovative interface circuit, a simple non-inverting amplifier fully emulates high CMRR differential. The amplifier equivalent CMRR (typical range from 70-100 dB) is equal to the open loop gain of the operational amplifier used in the transimpedance interface stage. The circuit has very simple structure and utilises a small number of popular components. The amplifier is intended for use in various two-electrode applications, such as Holter-type monitors, defibrillators, ECG monitors, biotelemetry devices etc.

Linearly polarized fiber amplifier

DOEpatents

Kliner, Dahv A.; Koplow, Jeffery P.

2004-11-30

Optically pumped rare-earth-doped polarizing fibers exhibit significantly higher gain for one linear polarization state than for the orthogonal state. Such a fiber can be used to construct a single-polarization fiber laser, amplifier, or amplified-spontaneous-emission (ASE) source without the need for additional optical components to obtain stable, linearly polarized operation.

Bidirectional amplifier

DOEpatents

Wright, J.T.

1984-02-02

A bilateral circuit is operable for transmitting signals in two directions without generation of ringing due to feedback caused by the insertion of the circuit. The circuit may include gain for each of the signals to provide a bidirectional amplifier. The signals are passed through two separate paths, with a unidirectional amplifier in each path. A controlled sampling device is provided in each path for sampling the two signals. Any feedback loop between the two signals is disrupted by providing a phase displacement between the control signals for the two sampling devices.

Bidirectional amplifier

DOEpatents

Wright, James T.

1986-01-01

A bilateral circuit is operable for transmitting signals in two directions without generation of ringing due to feedback caused by the insertion of the circuit. The circuit may include gain for each of the signals to provide a bidirectional amplifier. The signals are passed through two separate paths, with a unidirectional amplifier in each path. A controlled sampling device is provided in each path for sampling the two signals. Any feedback loop between the two signals is disrupted by providing a phase displacement between the control signals for the two sampling devices.

Ku band low noise parametric amplifier

NASA Technical Reports Server (NTRS)

1976-01-01

A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.

Noise and frequency response of silicon photodiode operational amplifier combination.

PubMed

Hamstra, R H; Wendland, P

1972-07-01

The noise in dark and illuminated Schottky barrier and diffused PIN non-guard-ring photodiodes has been measured between 0.1 Hz and 10 kHz and compared to theory with an excellent fit. It is shown that diodes used photovoltaically are free of 1/f noise in the dark. It is also demonstrated that there is an optimum bias (ca. 100 mV) for minimum noise equivalent power. When only a resistive load is used with a detector, it often determines the frequency response and noise of the detector circuit. We develop and demonstrate equations for the major improvements in both noise and frequency response that can be obtained using a current mode (inverting) operational amplifier.

'Soft' amplifier circuits based on field-effect ionic transistors.

PubMed

Boon, Niels; Olvera de la Cruz, Monica

2015-06-28

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst-Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

A micropower electrocardiogram amplifier.

PubMed

Fay, L; Misra, V; Sarpeshkar, R

2009-10-01

We introduce an electrocardiogram (EKG) preamplifier with a power consumption of 2.8 muW, 8.1 muVrms input-referred noise, and a common-mode rejection ratio of 90 dB. Compared to previously reported work, this amplifier represents a significant reduction in power with little compromise in signal quality. The improvement in performance may be attributed to many optimizations throughout the design including the use of subthreshold transistor operation to improve noise efficiency, gain-setting capacitors versus resistors, half-rail operation wherever possible, optimal power allocations among amplifier blocks, and the sizing of devices to improve matching and reduce noise. We envision that the micropower amplifier can be used as part of a wireless EKG monitoring system powered by rectified radio-frequency energy or other forms of energy harvesting like body vibration and body heat.

Photonic-band-gap gyrotron amplifier with picosecond pulses.

PubMed

Nanni, Emilio A; Jawla, Sudheer; Lewis, Samantha M; Shapiro, Michael A; Temkin, Richard J

2017-12-04

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE 03 -like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Theory and Implementation of a VLSI Stray Insensitive Switched Capacitor Composite Operational Amplifier

DTIC Science & Technology

1994-06-01

to the simulations, we get a proof of correct concept that matches the mathematical foundation of the microchip. 108 Vill. APPLICATIONS A. WHERE AND...ORGANIZATION (if applicable ) 8c. ADDRESS (City, State, and ZIP Code) 10. SOURCE OF FUNDING NUMBERS Ivogru Elewwn No. Pro8a No. Task No. Wor Unit Acess L...necessary and identify by block number) ’ FIELD GROUP SUBGROUP Mathematical derivation of circuit transfer functions, Composite Operational Amplifiers

Preamplifiers for non-contact capacitive biopotential measurements*

PubMed Central

Peng, GuoChen; Ignjatovic, Zeljko; Bocko, Mark F.

2014-01-01

Non-contact biopotential sensing is an attractive measurement strategy for a number of health monitoring applications, primarily the ECG and the EEG. In all such applications a key technical challenge is the design of a low-noise trans-impedance preamplifier for the typically low-capacitance, high source impedance sensing electrodes. In this paper, we compare voltage and charge amplifier designs in terms of their common mode rejection ratio, noise performance, and frequency response. Both amplifier types employ the same operational-transconductance amplifier (OTA), which was fabricated in a 0.35um CMOS process. The results show that a charge amplifier configuration has advantages for small electrode-to-subject coupling capacitance values (less than 10 pF - typical of noncontact electrodes) and that the voltage amplifier configuration has advantages for electrode capacitances above 10 pF. PMID:24109979

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat D.

2008-01-01

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

The e-beam sustained CO2 laser amplifier

NASA Technical Reports Server (NTRS)

Brown, M. J.; Shaw, S. R.; Evans, M. H.; Smith, I. M.; Holman, W.

1990-01-01

The design features of an e-beam sustained CO2 amplifier are described. The amplifier is designed specifically as a catalyst test-bed to study the performance of room temperature precious metal CO-oxidation catalysts under e-beam sustained operation. The amplifier has been designed to provide pulse durations of 30 microseconds in a discharge volume of 2 litres. With a gas flow velocity of 2 metres per second, operation at repetition rates of 10 Hz is accommodated. The system is designed for sealed-off operation and a catalyst bed is housed in the gas circulation system downstream from the discharge region. CO and oxygen monitors are used for diagnosis of gas composition in the amplifier so that catalyst performance can be monitored in situ during sealed lifetests.

Waveguide Power-Amplifier Module for 80 to 150 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Weinreb, Sander; Peralta, Alejandro

2006-01-01

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.

Advanced Concepts in Josephson Junction Reflection Amplifiers

NASA Astrophysics Data System (ADS)

Lähteenmäki, Pasi; Vesterinen, Visa; Hassel, Juha; Paraoanu, G. S.; Seppä, Heikki; Hakonen, Pertti

2014-06-01

Low-noise amplification at microwave frequencies has become increasingly important for the research related to superconducting qubits and nanoelectromechanical systems. The fundamental limit of added noise by a phase-preserving amplifier is the standard quantum limit, often expressed as noise temperature . Towards the goal of the quantum limit, we have developed an amplifier based on intrinsic negative resistance of a selectively damped Josephson junction. Here we present measurement results on previously proposed wide-band microwave amplification and discuss the challenges for improvements on the existing designs. We have also studied flux-pumped metamaterial-based parametric amplifiers, whose operating frequency can be widely tuned by external DC-flux, and demonstrate operation at pumping, in contrast to the typical metamaterial amplifiers pumped via signal lines at.

Tunnel junction of helical edge states: Determining and controlling spin-preserving and spin-flipping processes through transconductance

NASA Astrophysics Data System (ADS)

Sternativo, Pietro; Dolcini, Fabrizio

2014-01-01

When a constriction is realized in a 2D quantum spin Hall system, electron tunneling between helical edge states occurs via two types of channels allowed by time-reversal symmetry, namely spin-preserving (p) and spin-flipping (f) tunneling processes. Determining and controlling the effects of these two channels is crucial to the application of helical edge states in spintronics. We show that, despite that the Hamiltonian terms describing these two processes do not commute, the scattering matrix entries of the related 4-terminal setup always factorize into products of p-term and f-term contributions. Such factorization provides an operative way to determine the transmission coefficients Tp and Tf related to each of the two processes, via transconductance measurements. Furthermore, these transmission coefficients are also found to be controlled independently by a suitable combination of two gate voltages applied across the junction. This result holds for an arbitrary profile of the tunneling amplitudes, including disorder in the tunnel region, enabling us to discuss the effect of the finite length of the tunnel junction, and the space modulation of both magnitude and phase of the tunneling amplitudes.

High-efficiency S-band harmonic tuning GaN amplifier

NASA Astrophysics Data System (ADS)

Cao, Meng-Yi; Zhang, Kai; Chen, Yong-He; Zhang, Jin-Cheng; Ma, Xiao-Hua; Hao, Yue

2014-03-01

In this paper, we present a high-efficiency S-band gallium nitride (GaN) power amplifier (PA). This amplifier is fabricated based on a self-developed GaN high-electron-mobility transistor (HEMT) with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2nd harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm (~70 W) with a power-added efficiency (PAE) of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz (20% relative bandwidth), the amplifier provides an output power higher than 48 dBm (~ 65 W), with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave (CW) operating conditions, the amplifier gives an output power over 46 dBm (40 W) with PAE beyond 60% over the whole operation frequency range.

Reactanceless synthesized impedance bandpass amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L. L. (Inventor)

1985-01-01

An active R bandpass filter network is formed by four operational amplifier stages interconnected by discrete resistances. One pair of stages synthesize an equivalent input impedance of an inductance (L sub eq) in parallel with a discrete resistance (R sub o) while the second pair of stages synthesizes an equivalent input impedance of a capacitance (C sub eq) serially coupled to another discrete resistance (R sub i) coupled in parallel with the first two stages. The equivalent input impedances aggregately define a tuned resonant bandpass filter in the roll-off regions of the operational amplifiers.

Enhanced 10 Gb/s operations of directly modulated reflective semiconductor optical amplifiers without electronic equalization.

PubMed

Presi, M; Chiuchiarelli, A; Corsini, R; Choudury, P; Bottoni, F; Giorgi, L; Ciaramella, E

2012-12-10

We report enhanced 10 Gb/s operation of directly modulated bandwidth-limited reflective semiconductor optical amplifiers. By using a single suitable arrayed waveguide grating we achieve simultaneously WDM demultiplexing and optical equalization. Compared to previous approaches, the proposed system results significantly more tolerant to seeding wavelength drifts. This removes the need for wavelength lockers, additional electronic equalization or complex digital signal processing. Uniform C-band operations are obtained experimentally with < 2 dB power penalty within a wavelength drift of 10 GHz (which doubles the ITU-T standard recommendations).

Deflection amplifier for image dissectors

NASA Technical Reports Server (NTRS)

Salomon, P. M.

1977-01-01

Balanced symmetrical y-axis amplifier uses zener-diode level shifting to interface operational amplifiers to high voltage bipolar output stages. Nominal voltage transfer characteristic is 40 differential output volts per input volt; bandwidth, between -3-dB points, is approximately 8 kHz; loop gain is nominally 89 dB with closed loop gain of 26 dB.

A CMOS current-mode log(x) and log(1/x) functions generator

NASA Astrophysics Data System (ADS)

Al-Absi, Munir A.; Al-Tamimi, Karama M.

2014-08-01

A novel Complementary Metal Oxide Semiconductor (CMOS) current-mode low-voltage and low-power controllable logarithmic function circuit is presented. The proposed design utilises one Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The proposed design provides high dynamic range, controllable amplitude, high accuracy and is insensitive to temperature variations. The circuit operates on a ±0.6 V power supply and consumes 0.3 μW. The functionality of the proposed circuit was verified using HSPICE with 0.35 μm 2P4M CMOS process technology.

Field effect transistors improve buffer amplifier

NASA Technical Reports Server (NTRS)

1967-01-01

Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth.

Input-output Transfer Function Analysis of a Photometer Circuit Based on an Operational Amplifier.

PubMed

Hernandez, Wilmar

2008-01-09

In this paper an input-output transfer function analysis based on the frequencyresponse of a photometer circuit based on operational amplifier (op amp) is carried out. Opamps are universally used in monitoring photodetectors and there are a variety of amplifierconnections for this purpose. However, the electronic circuits that are usually used to carryout the signal treatment in photometer circuits introduce some limitations in theperformance of the photometers that influence the selection of the op amps and otherelectronic devices. For example, the bandwidth, slew-rate, noise, input impedance and gain,among other characteristics of the op amp, are often the performance limiting factors ofphotometer circuits. For this reason, in this paper a comparative analysis between twophotodiode amplifier circuits is carried out. One circuit is based on a conventional currentto-voltage converter connection and the other circuit is based on a robust current-to-voltageconverter connection. The results are satisfactory and show that the photodiode amplifierperformance can be improved by using robust control techniques.

Asymmetric underlap spacer layer enabled nanoscale double gate MOSFETs for design of ultra-wideband cascode amplifiers

NASA Astrophysics Data System (ADS)

Roy, Debapriya; Biswas, Abhijit

2017-10-01

Using extensive numerical analysis we investigate effects of asymmetric sidewall spacers on various device parameters of 20-nm double gate MOSFETs associated with analog/RF applications. Our studies show that the device with underlap drain-side spacer length LED of 10 nm and source-side spacer length LES of 5 nm shows improvement in terms of the peak value of transconductance efficiency, voltage gain Av, unity-gain cut-off frequency fT and maximum frequency of oscillations fMAX by 8.6%, 51.7%, 5% and 10.3%, respectively compared to the symmetric 5 nm underlap spacer device with HfO2 spacer of dielectric constant k = 22. Additionally, a higher spacer dielectric constant increases the peak Av while decreasing both peak fT and fMAX. The detailed physical insight is exploited to design a cascode amplifier which yields an ultra-wide gain bandwidth of 2.48 THz at LED = 10 nm with a SiO2 spacer.

1.8V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET

NASA Astrophysics Data System (ADS)

Harima, Fumio; Bito, Yasunori; Takahashi, Hidemasa; Iwata, Naotaka

We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p+-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5mm×1.5mm×0.4mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20dBm is achieved with an associated gain of 22dB. Also, sufficiently low leakage current of 0.25μA at 27°C is exhibited, which is comparable to conventional HBT power amplifiers.

Small-signal amplifier based on single-layer MoS2

NASA Astrophysics Data System (ADS)

Radisavljevic, Branimir; Whitwick, Michael B.; Kis, Andras

2012-07-01

In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.

An operational amplifier B1404UD1A-1 in the patch-clamp current-to-voltage converter.

PubMed

Korzun, A M; Rozinov, S V; Abashin, G I

1997-01-01

The applicability of the home-made operational amplifier B1404UD1A-1 in a patch-clamp current-to-voltage converter was analyzed. Its parameters (background noise, input bias current, and gain-bandwidth product) were estimated. Schematic solutions and practical recommendations for the use of this amplifier in a current-to-voltage converter were given. Based on the background noise and frequency parameters of the converter, we found that this device can be used for measuring ion channel currents with a high sensitivity and within a broad frequency range (0.055 pA, to 1 kHz; 0.4 pA, to 10 kHz). An example of the converter application in experiments is given.

S-band low noise amplifier and 40 kW high power amplifier subsystems of Japanese Deep Space Earth Station

NASA Astrophysics Data System (ADS)

Honma, K.; Handa, K.; Akinaga, W.; Doi, M.; Matsuzaki, O.

This paper describes the design and the performance of the S-band low noise amplifier and the S-band high power amplifier that have been developed for the Usuda Deep Space Station of the Institute of Space and Astronautical Science (ISAS), Japan. The S-band low noise amplifier consists of a helium gas-cooled parametric amplifier followed by three-stage FET amplifiers and has a noise temperature of 8 K. The high power amplifier is composed of two 28 kW klystrons, capable of transmitting 40 kW continuously when two klystrons are combined. Both subsystems are operating quite satisfactorily in the tracking of Sakigake and Suisei, the Japanese interplanetary probes for Halley's comet exploration, launched by ISAS in 1985.

Band-Pass Amplifier Without Discrete Reactance Elements

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1984-01-01

Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.

X-Band, 17-Watt Solid-State Power Amplifier

NASA Technical Reports Server (NTRS)

Mittskus, Anthony; Stone, Ernest; Boger, William; Burgess, David; Honda, Richard; Nuckolls, Carl

2005-01-01

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Surface electromyographic electrode pair with built-in buffer-amplifiers.

PubMed

Fujisawa, M; Uchida, K; Yamada, Y; Ishibashi, K

1990-03-01

By means of a surface electrode with an operational amplifier, a new electrode unit suitable for an electromyographic-biofeedback apparatus and for portable electromyography used outside a Faraday cage was developed. The operational amplifier, which has an output impedance lower than 10 ohms, functions as an efficient buffer amplifier and is able to protect the EMG signals from background noises. This new electrode unit is small (32 x 12 x 5 mm), waterproof, and inexpensive. Because its structure is simple, it can be built in any laboratory.

Man-Amplifying Exoskeleton

NASA Astrophysics Data System (ADS)

Rosheim, Mark E.

1990-03-01

This paper describes a design for a man-amplifying exoskeleton, an electrically powered, articulated frame worn by an operator. The design features modular construction and employ anthropomorphic pitch-yaw joints for arms and legs. These singularity-free designs offer a significant advancement over simple pivot-type joints used in older designs. Twenty-six degrees-of-freedom excluding the hands gives the Man-Amplifier its unique dexterity. A five hundred-pound load capacity is engineered for a diverse range of tasks. Potential applications in emergency rescue work, restoring functionality to the handicapped, and military applications ranging from material handling to an elite fighting core are discussed. A bibliography concludes this paper.

Signal processing with a summing operational amplifier in multicomponent potentiometric titrations.

PubMed

Parczewski, A

1987-06-01

It has been proved that application of two indicator electrodes connected to the ordinary titration apparatus through an auxiliary electronic device (a summing operational amplifier) significantly extends the scope of multicomponent potentiometric titrations in which the analytes are determined simultaneously from a single titration curve. For each analyte there is a corresponding potential jump on the titration curve. By application of the proposed auxiliary device, the sum of the electrode potentials is measured. The device also enables the relative sizes of the potential jumps at the end-points on the titration curve to be varied. The advantages of the proposed signal processing are exemplified by complexometric potentiometric titrations of Fe(III) and Cu(II) in mixtures, with a platinum electrode and a copper ion-selective electrode as the indicator electrodes.

Digitally gain controlled linear high voltage amplifier for laboratory applications.

PubMed

Koçum, C

2011-08-01

The design of a digitally gain controlled high-voltage non-inverting bipolar linear amplifier is presented. This cost efficient and relatively simple circuit has stable operation range from dc to 90 kHz under the load of 10 kΩ and 39 pF. The amplifier can swing up to 360 V(pp) under these conditions and it has 2.5 μs rise time. The gain can be changed by the aid of JFETs. The amplifiers have been realized using a combination of operational amplifiers and high-voltage discrete bipolar junction transistors. The circuit details and performance characteristics are discussed.

Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier

NASA Astrophysics Data System (ADS)

Roig, Fabien; Dusseau, L.; Ribeiro, P.; Auriel, G.; Roche, N. J.-H.; Privat, A.; Vaillé, J.-R.; Boch, J.; Saigné, F.; Marec, R.; Calvel, P.; Bezerra, F.; Ecoffet, R.; Azais, B.

2014-08-01

Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed on the ATREE responsesfrom different manufacturers. The ATREEs are produced by pulsed X-ray experiments. ASET laser mappings are performed to highlight the sensitive bipolar transistors, explaining the ATREE phenomena variations from one manufacturer to another one. ATREE modeling results are presented using a previously developed simulation tool. A good agreement is observed between experimental ATREE responses and model outputs whatever the TID level, the prompt dose level, the amplifier configuration and the device manufacturer.

Multiple Differential-Amplifier MMICs Embedded in Waveguides

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schlecht, Erich

2010-01-01

Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.

Method and system for compact, multi-pass pulsed laser amplifier

DOEpatents

Erlandson, Alvin Charles

2014-11-25

A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naquin, Clint; Lee, Mark; Edwards, Hal

2014-11-24

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility ofmore » exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.« less

A 1V low power second-order delta-sigma modulator for biomedical signal application.

PubMed

Hsu, Chih-Han; Tang, Kea-Tiong

2013-01-01

This paper presents the design and implementation of a low-power delta-sigma modulator for biomedical application with a standard 90 nm CMOS technology. The delta-sigma architecture is implemented as 2nd order feedforward architecture. A low quiescent current operational transconductance amplifier (OTA) is utilized to reduce power consumption. This delta-sigma modulator operated in 1V power supply, and achieved 64.87 dB signal to noise distortion ratio (SNDR) at 10 KHz bandwidth with an oversampling ratio (OSR) of 64. The power consumption is 17.14 µW, and the figure-of-merit (FOM) is 0.60 pJ/conv.

Two-electrode non-differential biopotential amplifier.

PubMed

Dobrev, D

2002-09-01

A circuit is proposed for a non-differential two-electrode biopotential amplifier, with a current source and a transimpedance amplifier as a potential equaliser for its inputs, fully emulating a differential amplifier. The principle of operation is that the current in the input of the transimpedance amplifier is sensed and made to flow with the same value in the other input. The circuit has a simple structure and uses a small number of components. The current source maintains balanced common-mode interference currents, thus ensuring high signal input impedance. In addition, these currents can be tolerated up to more than 10 microA per input, at a supply voltage of +/- 5 V. A two-electrode differential amplifier with 2 x 10 Mohm input resistances to the reference point allows less than 0.5 microA per input. The circuit can be useful in cases of biosignal acquisition by portable instruments, using low supply voltages, from subjects in areas of high electromagnetic fields. Examples include biosignal recordings in electric power stations and electrically powered locomotives, where traditionally designed input amplifier stages can be saturated.

PEAK LIMITING AMPLIFIER

DOEpatents

Goldsworthy, W.W.; Robinson, J.B.

1959-03-31

A peak voltage amplitude limiting system adapted for use with a cascade type amplifier is described. In its detailed aspects, the invention includes an amplifier having at least a first triode tube and a second triode tube, the cathode of the second tube being connected to the anode of the first tube. A peak limiter triode tube has its control grid coupled to thc anode of the second tube and its anode connected to the cathode of the second tube. The operation of the limiter is controlled by a bias voltage source connected to the control grid of the limiter tube and the output of the system is taken from the anode of the second tube.

Josephson junction microwave amplifier in self-organized noise compression mode

PubMed Central

Lähteenmäki, Pasi; Vesterinen, Visa; Hassel, Juha; Seppä, Heikki; Hakonen, Pertti

2012-01-01

The fundamental noise limit of a phase-preserving amplifier at frequency is the standard quantum limit . In the microwave range, the best candidates have been amplifiers based on superconducting quantum interference devices (reaching the noise temperature at 700 MHz), and non-degenerate parametric amplifiers (reaching noise levels close to the quantum limit at 8 GHz). We introduce a new type of an amplifier based on the negative resistance of a selectively damped Josephson junction. Noise performance of our amplifier is limited by mixing of quantum noise from Josephson oscillation regime down to the signal frequency. Measurements yield nearly quantum-limited operation, at 2.8 GHz, owing to self-organization of the working point. Simulations describe the characteristics of our device well and indicate potential for wide bandwidth operation. PMID:22355788

Radiation Performance of Commercial SiGe HBT BiCMOS-High Speed Operational Amplifiers

NASA Technical Reports Server (NTRS)

Chen, Dakai; Pellish, Jonathan; Phan, Anthony; Kim, Hak; Burns, Sam; Albarian, Rafi; Holcombe, Bruce; Little, Bradley; Salzman, James; LaBel, Kenneth

2010-01-01

We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS operational amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs. The SET cross-sections increase with increasing operating frequency. The LTC6400 exhibits a LET(sub th) < 7.4 MeV·sq cm/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LET(sub th) < 4.4 MeV·sq cm/mg at 200 MHz; the LET(sub th) decreases with increasing frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz can erase several signal cycles. We al.so found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.

Oscillator or Amplifier With Wide Frequency Range

NASA Technical Reports Server (NTRS)

Kleinberg, L.; Sutton, J.

1987-01-01

Inductive and capacitive effects synthesized with feedback circuits. Oscillator/amplifier resistively tunable over wide frequency range. Feedback circuits containing operational amplifiers, resistors, and capacitors synthesize electrical effects of inductance and capacitance in parallel between input terminals. Synthetic inductance and capacitance, and, therefore, resonant frequency of input admittance, adjusted by changing potentiometer setting.

Integrated Circuit Design of 3 Electrode Sensing System Using Two-Stage Operational Amplifier

NASA Astrophysics Data System (ADS)

Rani, S.; Abdullah, W. F. H.; Zain, Z. M.; N, Aqmar N. Z.

2018-03-01

This paper presents the design of a two-stage operational amplifier(op amp) for 3-electrode sensing system readout circuits. The designs have been simulated using 0.13μm CMOS technology from Silterra (Malaysia) with Mentor graphics tools. The purpose of this projects is mainly to design a miniature interfacing circuit to detect the redox reaction in the form of current using standard analog modules. The potentiostat consists of several op amps combined together in order to analyse the signal coming from the 3-electrode sensing system. This op amp design will be used in potentiostat circuit device and to analyse the functionality for each module of the system.

Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

NASA Astrophysics Data System (ADS)

Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

2016-09-01

Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

Parametric traveling wave amplifier with a low pump frequency

NASA Astrophysics Data System (ADS)

Marchenko, V. F.; Streltsov, A. M.; Zhmurov, S. E.

1983-01-01

Consideration is given to the model of a parametric traveling wave amplifier with a cubic nonlinearity in the form of an LF filter with MOS varactors. The operation of the amplifier is analyzed with allowance for wave damping and nonlinearity saturation, and the nonlinear mode of operation is examined. Experimental results are discussed, with emphasis on the amplitude-frequency response characteristics.

An Introduction to Phase-Sensitive Amplifiers: An Inexpensive Student Instrument

ERIC Educational Resources Information Center

Temple, Paul A.

1975-01-01

Discusses the principle of operation of phase-sensitive amplifiers. Gives three examples, suitable for undergraduate laboratory use, of the use of phase-sensitive, or "lock-in" amplifiers. Concludes with a description of an inexpensive lock-in amplifier which has an overall voltage gain of 1000. (Author/MLH)

Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

2010-01-01

This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

A parallel input composite transimpedance amplifier.

PubMed

Kim, D J; Kim, C

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

A parallel input composite transimpedance amplifier

NASA Astrophysics Data System (ADS)

Kim, D. J.; Kim, C.

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

PULSE AMPLIFIER

DOEpatents

Johnstone, C.W.

1958-06-17

The improvement of pulse amplifiers used with scintillation detectors is described. The pulse amplifier circuit has the advantage of reducing the harmful effects of overloading cause by large signal inputs. In general the pulse amplifier circuit comprises two amplifier tubes with the input pulses applied to one amplifier grid and coupled to the second amplifier tube through a common cathode load. The output of the second amplifier is coupled from the plate circuit to a cathode follower tube grid and a diode tube in connected from grid to cathode of the cathode follower tube. Degenerative feedback is provided in the second amplifier by coupling a signal from the cathode follower cathode to the second amplifier grid. The circuit proqides moderate gain stability, and overload protection for subsequent pulse circuits.

Note: A high dynamic range, linear response transimpedance amplifier.

PubMed

Eckel, S; Sushkov, A O; Lamoreaux, S K

2012-02-01

We have built a high dynamic range (nine decade) transimpedance amplifier with a linear response. The amplifier uses junction-gate field effect transistors (JFETs) to switch between three different resistors in the feedback of a low input bias current operational amplifier. This allows for the creation of multiple outputs, each with a linear response and a different transimpedance gain. The overall bandwidth of the transimpedance amplifier is set by the bandwidth of the most sensitive range. For our application, we demonstrate a three-stage amplifier with transimpedance gains of approximately 10(9)Ω, 3 × 10(7)Ω, and 10(4)Ω with a bandwidth of 100 Hz.

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Reck, Theodore and; Schlecht, Erich; Lin, Robert; Deal, William

2012-01-01

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

Amplifiers of free-space terahertz radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kao, Tsung -Yu; Reno, John L.; Hu, Qing

Here, amplifiers of free-space radiation are quite useful, especially in spectral ranges where the radiation is weak and sensitive detectors are hard to come by. A preamplification of the said weak radiation signal will significantly boost the S/N ratio in remote sensing and imaging applications. This is especially true in the terahertz (THz) range where the radiation signal is often weak and sensitive detectors require the cooling of liquid helium. Although quantum cascade structures are promising for providing amplification in the terahertz band from 2 to 5 THz, a THz amplifier has been demonstrated in an integrated form, in whichmore » the source is in close proximity to the amplifier, which will not be suitable for the aforementioned applications. Here we demonstrate what we believe is a novel approach to achieve significant amplification of free-space THz radiation using an array of short-cavity, surface-emitting THz quantum cascade lasers operating marginally below the lasing threshold as a Fabry–Perot amplifier. This free-space “slow light” amplifier provides 7.5 dB(×5.6) overall gain at ~3.1 THz. The proposed devices are suitable for low-noise pre-amplifiers in heterodyne detection systems and for THz imaging systems. With the sub-wavelength pixel size of the array, the reflective amplifier can also be categorized as active metasurface, with the ability to amplify or absorb specific frequency components of the input THz signal.« less

Amplifiers of free-space terahertz radiation

DOE PAGES

Kao, Tsung -Yu; Reno, John L.; Hu, Qing

2017-07-20

Here, amplifiers of free-space radiation are quite useful, especially in spectral ranges where the radiation is weak and sensitive detectors are hard to come by. A preamplification of the said weak radiation signal will significantly boost the S/N ratio in remote sensing and imaging applications. This is especially true in the terahertz (THz) range where the radiation signal is often weak and sensitive detectors require the cooling of liquid helium. Although quantum cascade structures are promising for providing amplification in the terahertz band from 2 to 5 THz, a THz amplifier has been demonstrated in an integrated form, in whichmore » the source is in close proximity to the amplifier, which will not be suitable for the aforementioned applications. Here we demonstrate what we believe is a novel approach to achieve significant amplification of free-space THz radiation using an array of short-cavity, surface-emitting THz quantum cascade lasers operating marginally below the lasing threshold as a Fabry–Perot amplifier. This free-space “slow light” amplifier provides 7.5 dB(×5.6) overall gain at ~3.1 THz. The proposed devices are suitable for low-noise pre-amplifiers in heterodyne detection systems and for THz imaging systems. With the sub-wavelength pixel size of the array, the reflective amplifier can also be categorized as active metasurface, with the ability to amplify or absorb specific frequency components of the input THz signal.« less

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

1995-01-01

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

1995-07-25

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

Ultrasensitive low noise voltage amplifier for spectral analysis.

PubMed

Giusi, G; Crupi, F; Pace, C

2008-08-01

Recently we have proposed several voltage noise measurement methods that allow, at least in principle, the complete elimination of the noise introduced by the measurement amplifier. The most severe drawback of these methods is that they require a multistep measurement procedure. Since environmental conditions may change in the different measurement steps, the final result could be affected by these changes. This problem is solved by the one-step voltage noise measurement methodology based on a novel amplifier topology proposed in this paper. Circuit implementations for the amplifier building blocks based on operational amplifiers are critically discussed. The proposed approach is validated through measurements performed on a prototype circuit.

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

NASA Technical Reports Server (NTRS)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Towards a THz backward wave amplifier in European OPTHER project

NASA Astrophysics Data System (ADS)

Dispenza, M.; Brunetti, F.; Cojocaru, C.-S.; de Rossi, A.; Di Carlo, A.; Dolfi, D.; Durand, A.; Fiorello, A. M.; Gohier, A.; Guiset, P.; Kotiranta, M.; Krozer, V.; Legagneux, P.; Marchesin, R.; Megtert, S.; Bouamrane, F.; Mineo, M.; Paoloni, C.; Pham, K.; Schnell, J. P.; Secchi, A.; Tamburri, E.; Terranova, M. L.; Ulisse, G.; Zhurbenko, V.

2010-10-01

Within the EC funded international project OPTHER (OPtically Driven TeraHertz AmplifiERs) a considerable technological effort is being undertaken, in terms of technological development, THz device design and integration. The ultimate goal is to develop a miniaturised THz amplifier based on vacuum-tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met with a proper device configuration and careful optimization of the different parts of the amplifier. Two parallel schemes will be employed for amplifier realisation: THz Drive Signal Amplifier and Optically Modulated Beam THz Amplifier.

Diode amplifier of modulated optical beam power

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'yachkov, N V; Bogatov, A P; Gushchik, T I

2014-11-30

Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

Segmented amplifier configurations for laser amplifier

DOEpatents

Hagen, Wilhelm F.

1979-01-01

An amplifier system for high power lasers, the system comprising a compact array of segments which (1) preserves high, large signal gain with improved pumping efficiency and (2) allows the total amplifier length to be shortened by as much as one order of magnitude. The system uses a three dimensional array of segments, with the plane of each segment being oriented at substantially the amplifier medium Brewster angle relative to the incident laser beam and with one or more linear arrays of flashlamps positioned between adjacent rows of amplifier segments, with the plane of the linear array of flashlamps being substantially parallel to the beam propagation direction.

Apparatus and methods for a human de-amplifier system

DOEpatents

Kress, Reid L.; Jansen, John F.

2000-01-01

A human de-amplifier system for interfacing a human operator and a physical object through a physical plant, wherein the physical object has dimensions in the range of 1 micrometer to 1 mm. The human de-amplifier system uses an inner-feedback loop to increases the equivalent damping of the operating system to stabilize the system when it contacts with the environment and reduces the impact of the environment variation by utilizing a high feedback gain, determined by a root locus sketch. Because the stability of the human de-amplifier system of the present invention is greatly enhanced over that of the prior art, the de-amplifier system is able to manipulate the physical object has dimensions in the range of 1 micrometer to 1 mm with high stability and accuracy. The system also has a monitoring device to monitor the motion of the physical object under manipulation.

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

Hardware implementation of an adaptive resonance theory (ART) neural network using compensated operational amplifiers

NASA Astrophysics Data System (ADS)

Ho, Ching S.; Liou, Juin J.; Georgiopoulos, Michael; Christodoulou, Christos G.

1994-03-01

This paper presents an analog circuit design and implementation for an adaptive resonance theory neural network architecture called the augmented ART1 neural network (AART1-NN). Practical monolithic operational amplifiers (Op-Amps) LM741 and LM318 are selected to implement the circuit, and a simple compensation scheme is developed to adjust the Op-Amp electrical characteristics to meet the design requirement. A 7-node prototype circuit has been designed and verified using the Pspice circuit simulator run on a Sun workstation. Results simulated from the AART1-NN circuit using the LM741, LM318, and ideal Op-Amps are presented and compared.

Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.

PubMed

Beev, Nikolai; Kiviranta, Mikko

2012-06-01

Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

MMIC HEMT Power Amplifier for 140 to 170 GHz

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Radisic, Vesna; Ngo, Catherine; Janke, Paul; Hu, Ming; Micovic, Miro

2003-01-01

A three-stage monolithic microwave integrated circuit (MMIC) power amplifier that features high-electron-mobility transistors (HEMTs) as gain elements is reviewed. This amplifier is designed to operate in the frequency range of 140 to 170 GHz, which contains spectral lines of several atmospheric molecular species plus subharmonics of other such spectral lines. Hence, this amplifier could serve as a prototype of amplifiers to be incorporated into heterodyne radiometers used in atmospheric science. The original intended purpose served by this amplifier is to boost the signal generated by a previously developed 164-GHz MMIC HEMT doubler and drive a 164-to-328-GHz doubler to provide a few milliwatts of power at 328 GHz.

Reduced Power Laer Designation Systems

DTIC Science & Technology

2008-06-20

200KD, Ri = = 60Kfl, and R 2 = R4 = 2K yields an overall transimpedance gain of 200K x 30 x 30 = 180MV/A. Figure 3. Three stage photodiode amplifier ...transistor circuit for bootstrap buffering of the input stage, comparing the noise performance of the candidate amplifier designs, selecting the two...transistor bootstrap design as the circuit of choice, and comparing the performance of this circuit against that of a basic transconductance amplifier

Ignition feedback regenerative free electron laser (FEL) amplifier

DOEpatents

Kim, Kwang-Je; Zholents, Alexander; Zolotorev, Max

2001-01-01

An ignition feedback regenerative amplifier consists of an injector, a linear accelerator with energy recovery, and a high-gain free electron laser amplifier. A fraction of the free electron laser output is coupled to the input to operate the free electron laser in the regenerative mode. A mode filter in this loop prevents run away instability. Another fraction of the output, after suitable frequency up conversion, is used to drive the photocathode. An external laser is provided to start up both the amplifier and the injector, thus igniting the system.

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

PubMed Central

Alismail, Ayman; Wang, Haochuan; Brons, Jonathan; Fattahi, Hanieh

2017-01-01

This is a report on a 100 W, 20 mJ, 1 ps Yb:YAG thin-disk regenerative amplifier. A homemade Yb:YAG thin-disk, Kerr-lens mode-locked oscillator with turn-key performance and microjoule-level pulse energy is used to seed the regenerative chirped-pulse amplifier. The amplifier is placed in airtight housing. It operates at room temperature and exhibits stable operation at a 5 kHz repetition rate, with a pulse-to-pulse stability less than 1%. By employing a 1.5 mm-thick beta barium borate crystal, the frequency of the laser output is doubled to 515 nm, with an average power of 70 W, which corresponds to an optical-to-optical efficiency of 70%. This superior performance makes the system an attractive pump source for optical parametric chirped-pulse amplifiers in the near-infrared and mid-infrared spectral range. Combining the turn-key performance and the superior stability of the regenerative amplifier, the system facilitates the generation of a broadband, CEP-stable seed. Providing the seed and pump of the optical parametric chirped-pulse amplification (OPCPA) from one laser source eliminates the demand of active temporal synchronization between these pulses. This work presents a detailed guide to set up and operate a Yb:YAG thin-disk regenerative amplifier, based on chirped-pulse amplification (CPA), as a pump source for an optical parametric chirped-pulse amplifier. PMID:28745636

Wideband pulse amplifiers for the NECTAr chip

NASA Astrophysics Data System (ADS)

Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribó, M.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

2012-12-01

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

MMIC DHBT Common-Base Amplifier for 172 GHz

NASA Technical Reports Server (NTRS)

Paidi, Vamsi; Griffith, Zack; Wei, Yun; Dahlstrom, Mttias; Urteaga, Miguel; Rodwell, Mark; Samoska, Lorene; Fung, King Man; Schlecht, Erich

2006-01-01

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this

SQUARE WAVE AMPLIFIER

DOEpatents

Leavitt, M.A.; Lutz, I.C.

1958-08-01

An amplifier circuit is described for amplifying sigmals having an alternating current component superimposed upon a direct current component, without loss of any segnnent of the alternating current component. The general circuit arrangement includes a vibrator, two square wave amplifiers, and recombination means. The amplifier input is connected to the vibrating element of the vibrator and is thereby alternately applied to the input of each square wave amplifier. The detailed circuitry of the recombination means constitutes the novelty of the annplifier and consists of a separate, dual triode amplifier coupled to the output of each square wave amplifier with a recombination connection from the plate of one amplifier section to a grid of one section of the other amplifier. The recombination circuit has provisions for correcting distortion caused by overlapping of the two square wave voltages from the square wave amplifiers.

Cleanliness for the NIF 1ω Laser Amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spaeth, M. L.; Manes, K. R.; Honig, J.

During the years before the National Ignition Facility (NIF) laser system, a set of generally accepted cleaning procedures had been developed for the large 1ω amplifiers of an inertial confinement fusion laser, and up until 1999 similar procedures were planned for NIF. Several parallel sets of test results were obtained from 1992 to 1999 for large amplifiers using these accepted cleaning procedures in the Beamlet physics test bed and in the Amplifier Module Prototype Laboratory (AMPLAB), a four-slab-high prototype large amplifier structure. Both of these showed damage to their slab surfaces that, if projected to operating conditions for NIF, wouldmore » lead to higher than acceptable slab-refurbishment rates. Finally, this study tracks the search for the smoking gun origin of this damage and describes the solution employed in NIF for avoiding flashlamp-induced aerosol damage to its 1ω amplifier slabs.« less

Pulse laser imaging amplifier for advanced ladar systems

NASA Astrophysics Data System (ADS)

Khizhnyak, Anatoliy; Markov, Vladimir; Tomov, Ivan; Murrell, David

2016-05-01

Security measures sometimes require persistent surveillance of government, military and public areas Borders, bridges, sport arenas, airports and others are often surveilled with low-cost cameras. Their low-light performance can be enhanced with laser illuminators; however various operational scenarios may require a low-intensity laser illumination with the object-scattered light intensity lower than the sensitivity of the Ladar image detector. This paper discusses a novel type of high-gain optical image amplifier. The approach enables time-synchronization of the incoming and amplifying signals with accuracy <= 1 ns. The technique allows the incoming signal to be amplified without the need to match the input spectrum to the cavity modes. Instead, the incoming signal is accepted within the spectral band of the amplifier. We have gauged experimentally the performance of the amplifier with a 40 dB gain and an angle of view 20 mrad.

Cleanliness for the NIF 1ω Laser Amplifiers

DOE PAGES

Spaeth, M. L.; Manes, K. R.; Honig, J.

2017-03-23

During the years before the National Ignition Facility (NIF) laser system, a set of generally accepted cleaning procedures had been developed for the large 1ω amplifiers of an inertial confinement fusion laser, and up until 1999 similar procedures were planned for NIF. Several parallel sets of test results were obtained from 1992 to 1999 for large amplifiers using these accepted cleaning procedures in the Beamlet physics test bed and in the Amplifier Module Prototype Laboratory (AMPLAB), a four-slab-high prototype large amplifier structure. Both of these showed damage to their slab surfaces that, if projected to operating conditions for NIF, wouldmore » lead to higher than acceptable slab-refurbishment rates. Finally, this study tracks the search for the smoking gun origin of this damage and describes the solution employed in NIF for avoiding flashlamp-induced aerosol damage to its 1ω amplifier slabs.« less

Update on Waveguide-Embedded Differential MMIC Amplifiers

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schleht, Erich

2010-01-01

There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

Optical amplifiers for coherent lidar

NASA Technical Reports Server (NTRS)

Fork, Richard

1996-01-01

We examine application of optical amplification to coherent lidar for the case of a weak return signal (a number of quanta of the return optical field close to unity). We consider the option that has been explored to date, namely, incorporation of an optical amplifier operated in a linear manner located after reception of the signal and immediately prior to heterodyning and photodetection. We also consider alternative strategies where the coherent interaction, the nonlinear processes, and the amplification are not necessarily constrained to occur in the manner investigated to date. We include the complications that occur because of mechanisms that occur at the level of a few, or one, quantum excitation. Two factors combine in the work to date that limit the value of the approach. These are: (1) the weak signal tends to require operation of the amplifier in the linear regime where the important advantages of nonlinear optical processing are not accessed, (2) the linear optical amplifier has a -3dB noise figure (SN(out)/SN(in)) that necessarily degrades the signal. Some improvement is gained because the gain provided by the optical amplifier can be used to overcome losses in the heterodyned process and photodetection. The result, however, is that introduction of an optical amplifier in a well optimized coherent lidar system results in, at best, a modest improvement in signal to noise. Some improvement may also be realized on incorporating more optical components in a coherent lidar system for purely practical reasons. For example, more compact, lighter weight, components, more robust alignment, or more rapid processing may be gained. We further find that there remain a number of potentially valuable, but unexplored options offered both by the rapidly expanding base of optical technology and the recent investigation of novel nonlinear coherent interference phenomena occurring at the single quantum excitation level. Key findings are: (1) insertion of linear optical

Efficient two-stage dual-beam noncollinear optical parametric amplifier

NASA Astrophysics Data System (ADS)

Cheng, Yu-Hsiang; Gao, Frank Y.; Poulin, Peter R.; Nelson, Keith A.

2018-06-01

We have constructed a noncollinear optical parametric amplifier with two signal beams amplified in the same nonlinear crystal. This dual-beam design is more energy-efficient than operating two amplifiers in parallel. The cross-talk between two beams has been characterized and discussed. We have also added a second amplification stage to enhance the output of one of the arms, which is then frequency-doubled for ultraviolet generation. This single device provides two tunable sources for ultrafast spectroscopy in the ultraviolet and visible region.

Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy.

PubMed

Zhang, Chao; Jeon, Hoyeon; Oh, Myungchul; Lee, Minjun; Kim, Sungmin; Yi, Sunwouk; Lee, Hanho; Zoh, Inhae; Yoo, Yongchan; Kuk, Young

2017-06-01

A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Zhang, Chao; Jeon, Hoyeon; Oh, Myungchul; Lee, Minjun; Kim, Sungmin; Yi, Sunwouk; Lee, Hanho; Zoh, Inhae; Yoo, Yongchan; Kuk, Young

2017-06-01

A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ˜7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

LOGARITHMIC AMPLIFIER

DOEpatents

De Shong, J.A. Jr.

1957-12-31

A logarithmic current amplifier circuit having a high sensitivity and fast response is described. The inventor discovered the time constant of the input circuit of a system utilizing a feedback amplifier, ionization chamber, and a diode, is inversely proportional to the input current, and that the amplifier becomes unstable in amplifying signals in the upper frequency range when the amplifier's forward gain time constant equals the input circuit time constant. The described device incorporates impedance networks having low frequency response characteristic at various points in the circuit to change the forward gain of the amplifler at a rate of 0.7 of the gain magnitude for every two times increased in frequency. As a result of this improvement, the time constant of the input circuit is greatly reduced at high frequencies, and the amplifier response is increased.

Low-Noise Amplifier for 100 to 180 GHz

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Pukala, David; Fung, King Man; Gaier, Todd; Mei, Xiaobing; Lai, Richard; Deal, William

2009-01-01

A three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifier designed to exhibit low noise in operation at frequencies from about 100 to somewhat above 180 GHz has been built and tested. This is a prototype of broadband amplifiers that have potential utility in diverse applications, including measurement of atmospheric temperature and humidity and millimeter-wave imaging for inspecting contents of opaque containers. Figure 1 depicts the amplifier as it appears before packaging. Figure 2 presents data from measurements of the performance of the amplifier as packaged in a WR-05 waveguide and tested in the frequency range from about 150 to about 190 GHz. The amplifier exhibited substantial gain throughout this frequency range. Especially notable is the fact that at 165 GHz, the noise figure was found to be 3.7 dB, and the noise temperature was found to be 370 K: This is less than half the noise temperature of the prior state of the art.

A monolithic patch-clamping amplifier with capacitive feedback.

PubMed

Prakash, J; Paulos, J J; Jensen, D N

1989-03-01

Patch-clamping is an established method for directly measuring ionic transport through cellular membranes with sufficient resolution to observe open/close transitions of individual channel molecules. This paper describes an alternative technique for patch-clamping which uses a capacitor as the transimpedance element. This approach eliminates bandwidth and saturation limitations experienced with resistive patch-clamping amplifiers. A complete monolithic design featuring an on-chip operational amplifier, a capacitor array with gain-ranging from 30 pF down to 0.03 pF, and reset and gain ranging switches has been fabricated using 5 microns CMOS technology. It is shown that the voltage noise of the CMOS operational amplifier limits the overall noise performance, but that performance competitive with conventional instruments can be achieved over a 10 kHz bandwidth, at least for small input capacitances (less than or equal to 5 pF). Results are presented along with an analysis and comparison of noise performance using both resistive and capacitive elements.

Electronic amplifiers: A compilation

NASA Technical Reports Server (NTRS)

1971-01-01

Several types of amplifiers and amplifier systems are considered. These include preamplifiers, high power amplifiers, buffer and isolation amplifiers, amplifier circuits, and general purpose amplifiers.

CMOS image sensor with contour enhancement

NASA Astrophysics Data System (ADS)

Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

2010-10-01

Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

Highly Efficient Amplifier for Ka-Band Communications

NASA Technical Reports Server (NTRS)

1996-01-01

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power

X-band ultralow-noise maser amplifier performance

NASA Technical Reports Server (NTRS)

Glass, G. W.; Ortiz, G. G.; Johnson, D. L.

1994-01-01

Noise temperature measurements of an 8440-MHz ultralow noise maser amplifier (ULNA) have been performed at subatmospheric, liquid-helium temperatures. The traveling-wave maser was operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.43 +/- 0.16 K at a physical temperature of 1.60 K. At this physical temperature, the observed gain per centimeter of ruby was 4.9 dB/cm. The amplifier had a 3-dB bandwidth of 76 MHz.

Triple-mode single-transistor graphene amplifier and its applications.

PubMed

Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik

2010-10-26

We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

Demodulation Radio Frequency Interference Effects in Operational Amplifier Circuits

NASA Astrophysics Data System (ADS)

Sutu, Yue-Hong

A series of investigations have been carried out to determine RFI effects in analog circuits using monolithic integrated operational amplifiers (op amps) as active devices. The specific RFI effect investigated is how amplitude-modulated (AM) RF signals are demodulated in op amp circuits to produce undesired low frequency responses at AM-modulation frequency. The undesired demodulation responses were shown to be characterized by a second-order nonlinear transfer function. Four representative op amp types investigated were the 741 bipolar op amp, the LM10 bipolar op amp, the LF355 JFET-Bipolar op amp, and the CA081 MOS-Bipolar op amp. Two op amp circuits were investigated. The first circuit was a noninverting unity voltage gain buffer circuit. The second circuit was an inverting op amp configuration. In the second circuit, the investigation includes the effects of an RFI suppression capacitor in the feedback path. Approximately 30 units of each op amp type were tested to determine the statistical variations of RFI demodulation effects in the two op amp circuits. The Nonlinear Circuit Analysis Program, NCAP, was used to simulate the demodulation RFI response. In the simulation, the op amp was replaced with its incremental macromodel. Values of macromodel parameters were obtained from previous investigations and manufacturer's data sheets. Some key results of this work are: (1) The RFI demodulation effects are 10 to 20 dB lower in CA081 and LF355 FET-bipolar op amp than in 741 and LM10 bipolar op amp except above 40 MHz where the LM10 RFI response begins to approach that of CA081. (2) The experimental mean values for 30 741 op amps show that RFI demodulation responses in the inverting amplifier with a 27 pF feedback capacitor were suppressed from 10 to 35 dB over the RF frequency range 0.1 to 150 MHz except at 0.15 MHz where only 3.5 dB suppression was observed. (3) The NCAP program can predict RFI demodulation responses in 741 and LF355 unity gain buffer circuits

A low-noise current-sensitive amplifier-discriminator system for beta particle counting.

PubMed

Sephton, J P; Johansson, L C; Williams, J M

2008-01-01

NPL has developed a low-noise current amplifier/discriminator system for radionuclides that emit low-energy electrons and X-rays. The new beta amplifier is based on the low-noise Amptek A-250 operational amplifier. The design has been configured for optimum signal to noise ratio. The new amplifier is described and results obtained using primarily electron-capture decaying radionuclides are presented. The new amplifier gives rise to higher particle detection efficiency than the previously used Atomic Energy of Canada Limited-designed amplifier. This is shown by measurements of (54)Mn and (65)Zn. The counting plateaux are significantly longer and have reduced gradients.

47 CFR 95.411 - (CB Rule 11) May I use power amplifiers?

Code of Federal Regulations, 2010 CFR

2010-10-01

... premises; and (2) There is other evidence that you have operated your CB station with more power than... 47 Telecommunication 5 2010-10-01 2010-10-01 false (CB Rule 11) May I use power amplifiers? 95.411... Rule 11) May I use power amplifiers? (a) You may not attach the following items (power amplifiers) to...

A better understanding of organic electrochemical transistors for biosensing applications (Presentation Recording)

NASA Astrophysics Data System (ADS)

Friedlein, Jacob T.; Malliaras, George G.; Shaheen, Sean E.; McLeod, Robert R.

2015-10-01

Due to their biocompatibility, high transconductance, and low operating voltages, organic electrochemical transistors (OECTs) are promising platforms for biosensing applications. They have been used for measuring enzymes such as glucose and lactate, detecting disruptions of epithelial cell integrity, and amplifying epileptic voltage signals in rat brains. Accelerating the development of OECTs in this diverse range of potential applications, and those unforeseen, requires continued investigation of the device physics and material properties. In this presentation, we will describe our work to better understand OECT behavior, and we will discuss how this understanding can be used to develop more effective biosensors.

Recent progress on monolithic fiber amplifiers for next generation of gravitational wave detectors

NASA Astrophysics Data System (ADS)

Wellmann, Felix; Booker, Phillip; Hochheim, Sven; Theeg, Thomas; de Varona, Omar; Fittkau, Willy; Overmeyer, Ludger; Steinke, Michael; Weßels, Peter; Neumann, Jörg; Kracht, Dietmar

2018-02-01

Single-frequency fiber amplifiers in MOPA configuration operating at 1064 nm (Yb3+) and around 1550 nm (Er3+ or Er3+:Yb3+) are promising candidates to fulfill the challenging requirements of laser sources of the next generation of interferometric gravitational wave detectors (GWDs). Most probably, the next generation of GWDs is going to operate not only at 1064 nm but also at 1550 nm to cover a broader range of frequencies in which gravitational waves are detectable. We developed an engineering fiber amplifier prototype at 1064 nm emitting 215 W of linearly-polarized light in the TEM00 mode. The system consists of three modules: the seed source, the pre-amplifier, and the main amplifier. The modular design ensures reliable long-term operation, decreases system complexity and simplifies repairing and maintenance procedures. It also allows for the future integration of upgraded fiber amplifier systems without excessive downtimes. We also developed and characterized a fiber amplifier prototype at around 1550 nm that emits 100 W of linearly-polarized light in the TEM00 mode. This prototype uses an Er3+:Yb3+ codoped fiber that is pumped off-resonant at 940 nm. The off-resonant pumping scheme improves the Yb3+-to-Er3+ energy transfer and prevents excessive generation of Yb3+-ASE.

Hydraulically amplified PZT mems actuator

DOEpatents

Miles, Robin R.

2004-11-02

A hydraulically amplified microelectromechanical systems actuator. A piece of piezoelectric material or stacked piezo bimorph is bonded or deposited as a thin film. The piece is operatively connected to a primary membrane. A reservoir is operatively connected to the primary membrane. The reservoir contains a fluid. A membrane is operatively connected to the reservoir. In operation, energizing the piezoelectric material causing the piezoelectric material to bow. Bowing of the piezoelectric material causes movement of the primary membrane. Movement of the primary membrane results in a force in being transmitted to the liquid in the reservoir. The force in the liquid causes movement of the membrane. Movement of the membrane results in an operating actuator.

kW picosecond thin-disk regenerative amplifier

NASA Astrophysics Data System (ADS)

Michel, Knut; Wandt, Christoph; Klingebiel, Sandro; Schultze, Marcel; Prinz, Stephan; Teisset, Catherine Y.; Stark, Sebastian; Grebing, Christian; Bessing, Robert; Herzig, Tobias; Häfner, Matthias; Budnicki, Aleksander; Sutter, Dirk; Metzger, Thomas

2018-02-01

TRUMPF Scientific Lasers provides ultrafast laser sources for the scientific community with high pulse energies and high average power. All systems are based on the industrialized TRUMPF thin-disk technology. Regenerative amplifiers systems with multi-millijoule pulses, kilohertz repetition rates and picosecond pulse durations are available. Record values of 220mJ at 1kHz could be demonstrated originally developed for pumping optical parametric amplifiers. The ultimate goal is to combine high energies, <100mJ per pulse, with average powers of several hundred watts to a kilowatt. Based on a regenerative amplifier containing two Ytterbium doped thin-disks operated at ambient temperature pulses with picosecond duration and more than 100mJ could be generated at a repetition rate of 10kHz reaching 1kW of average output power. This system is designed to operate at different repetition rates from 100kHz down to 5kHz so that even higher pulse energies can be reached. This type of ultrafast sources uncover new application fields in science. Laser based lightning rods, X-ray lasers and Compton backscatter sources are among them.

Design, construction and test of RF solid state power amplifier for IRANCYC-10

NASA Astrophysics Data System (ADS)

Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

2018-03-01

In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

Multifrequency Raman amplifiers

NASA Astrophysics Data System (ADS)

Barth, Ido; Fisch, Nathaniel J.

2018-03-01

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the total fluence is split between the different spectral components.

Full wave modulator-demodulator amplifier apparatus. [for generating rectified output signal

NASA Technical Reports Server (NTRS)

Black, J. M. (Inventor)

1974-01-01

A full-wave modulator-demodulator apparatus is described including an operational amplifier having a first input terminal coupled to a circuit input terminal, and a second input terminal alternately coupled to the circuit input terminal. A circuit is ground by a switching circuit responsive to a phase reference signal and the operational amplifier is alternately switched between a non-inverting mode and an inverting mode. The switching circuit includes three field-effect transistors operatively associated to provide the desired switching function in response to an alternating reference signal of the same frequency as an AC input signal applied to the circuit input terminal.

Development and fabrication of S-band chip varactor parametric amplifier

NASA Technical Reports Server (NTRS)

Kramer, E.

1974-01-01

A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design.

The 30 GHz solid state amplifier for low cost low data rate ground terminals

NASA Technical Reports Server (NTRS)

Ngan, Y. C.; Quijije, M. A.

1984-01-01

This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.

Laser amplifier chain

DOEpatents

Hackel, R.P.

1992-10-20

A laser amplifier chain has a plurality of laser amplifiers arranged in a chain to sequentially amplify a low-power signal beam to produce a significantly higher-power output beam. Overall efficiency of such a chain is improved if high-gain, low efficiency amplifiers are placed on the upstream side of the chain where only a very small fraction of the total pumped power is received by the chain and low-gain, high-efficiency amplifiers are placed on the downstream side where a majority of pumping energy is received by the chain. 6 figs.

Laser amplifier chain

DOEpatents

Hackel, Richard P.

1992-01-01

A laser amplifier chain has a plurality of laser amplifiers arranged in a chain to sequentially amplify a low-power signal beam to produce a significantly higher-power output beam. Overall efficiency of such a chain is improved if high-gain, low efficiency amplifiers are placed on the upstream side of the chain where only a very small fraction of the total pumped power is received by the chain and low-gain, high-efficiency amplifiers are placed on the downstream side where a majority of pumping energy is received by the chain.

Multifrequency Raman amplifiers

DOE PAGES

Barth, Ido; Fisch, Nathaniel J.

2018-03-08

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less

Multifrequency Raman amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barth, Ido; Fisch, Nathaniel J.

In its usual implementation, the Raman amplifier features only one pump carrier frequency. However, pulses with well-separated frequencies can also be Raman amplified while compressed in time. Amplification with frequency-separated pumps is shown to hold even in the highly nonlinear, pump-depletion regime, as derived through a fluid model, and demonstrated via particle-in-cell (PIC) simulations. The resulting efficiency is similar to single-frequency amplifiers, but, due to the beat-wave waveform of both the pump lasers and the amplified seed pulses, these amplifiers feature higher seed intensities with a shorter spike duration. Advantageously, these amplifiers also suffer less noise backscattering, because the totalmore » fluence is split between the different spectral components.« less

Ku-band high efficiency GaAs MMIC power amplifiers

NASA Technical Reports Server (NTRS)

Tserng, H. Q.; Witkowski, L. C.; Wurtele, M.; Saunier, Paul

1988-01-01

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

REGENERATIVE TRANSISTOR AMPLIFIER

DOEpatents

Kabell, L.J.

1958-11-25

Electrical circults for use in computers and the like are described. particularly a regenerative bistable transistor amplifler which is iurned on by a clock signal when an information signal permits and is turned off by the clock signal. The amplifier porforms the above function with reduced power requirements for the clock signal and circuit operation. The power requirements are reduced in one way by employing transformer coupling which increases the collector circuit efficiency by eliminating the loss of power in the collector load resistor.

Parametric Amplifier and Oscillator Based on Josephson Junction Circuitry

NASA Astrophysics Data System (ADS)

Yamamoto, T.; Koshino, K.; Nakamura, Y.

While the demand for low-noise amplification is ubiquitous, applications where the quantum-limited noise performance is indispensable are not very common. Microwave parametric amplifiers with near quantum-limited noise performance were first demonstrated more than 20 years ago. However, there had been little effort until recently to improve the performance or the ease of use of these amplifiers, partly because of a lack of any urgent motivation. The emergence of the field of quantum information processing in superconducting systems has changed this situation dramatically. The need to reliably read out the state of a given qubit using a very weak microwave probe within a very short time has led to renewed interest in these quantum-limited microwave amplifiers, which are already widely used as tools in this field. Here, we describe the quantum mechanical theory for one particular parametric amplifier design, called the flux-driven Josephson parametric amplifier, which we developed in 2008. The theory predicts the performance of this parametric amplifier, including its gain, bandwidth, and noise temperature. We also present the phase detection capability of this amplifier when it is operated with a pump power that is above the threshold, i.e., as a parametric phase-locked oscillator or parametron.

HEMT Amplifiers and Equipment for their On-Wafer Testing

NASA Technical Reports Server (NTRS)

Fung, King man; Gaier, Todd; Samoska, Lorene; Deal, William; Radisic, Vesna; Mei, Xiaobing; Lai, Richard

2008-01-01

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

An Electronic System for Ultra-low Power Hearing Implants

DTIC Science & Technology

2013-02-15

analyzers [1], [2], useful in several hearing systems. 4) We have designed and built a lithium - ion battery -recharging circuit that exploits a novel analog...control strategy with a tanh-like transconductance amplifier to automatically cause the charging in of a lithium - ion battery to transition from

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2010 CFR

2010-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2012 CFR

2012-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2014 CFR

2014-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2011 CFR

2011-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

47 CFR 97.317 - Standards for certification of external RF power amplifiers.

Code of Federal Regulations, 2013 CFR

2013-10-01

... amplifier is operated at the lesser of 1.5 kW PEP or its full output power and when the amplifier is placed... peak envelope power or mean power. (3) Exhibit no amplification (0 dB gain) between 26 MHz and 28 MHz...

Problems of the design of low-noise input devices. [parametric amplifiers

NASA Technical Reports Server (NTRS)

Manokhin, V. M.; Nemlikher, Y. A.; Strukov, I. A.; Sharfov, Y. A.

1974-01-01

An analysis is given of the requirements placed on the elements of parametric centimeter waveband amplifiers for achievement of minimal noise temperatures. A low-noise semiconductor parametric amplifier using germanium parametric diodes for a receiver operating in the 4 GHz band was developed and tested confirming the possibility of satisfying all requirements.

Auto-Zero Differential Amplifier

NASA Technical Reports Server (NTRS)

Quilligan, Gerard T. (Inventor); Aslam, Shahid (Inventor)

2017-01-01

An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

An OTA-C filter for ECG acquisition systems with highly linear range and less passband attenuation

NASA Astrophysics Data System (ADS)

Jihai, Duan; Chuang, Lan; Weilin, Xu; Baolin, Wei

2015-05-01

A fifth order operational transconductance amplifier-C (OTA-C) Butterworth type low-pass filter with highly linear range and less passband attenuation is presented for wearable bio-telemetry monitoring applications in a UWB wireless body area network. The source degeneration structure applied in typical small transconductance circuit is improved to provide a highly linear range for the OTA-C filter. Moreover, to reduce the passband attenuation of the filter, a cascode structure is employed as the output stage of the OTA. The OTA-based circuit is operated in weak inversion due to strict power limitation in the biomedical chip. The filter is fabricated in a SMIC 0.18-μm CMOS process. The measured results for the filter have shown a passband gain of -6.2 dB, while the -3-dB frequency is around 276 Hz. For the 0.8 VPP sinusoidal input at 100 Hz, a total harmonic distortion (THD) of -56.8 dB is obtained. An electrocardiogram signal with noise interference is fed into this chip to validate the function of the designed filter. Project supported by the National Natural Science Foundation of China (Nos. 61161003, 61264001, 61166004) and the Guangxi Natural Science Foundation (No. 2013GXNSFAA019333).

First pulse effect self-suppression picosecond regenerative amplifier (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fan, Haitao; Chang, Liang; Zhang, Yi; Yao, Siyi; Lu, Wei; Yang, Xiaohong

2017-03-01

First pulse effect, commonly seen in nanosecond cavity-dumped lasers and picosecond regenerative amplifiers, not only leads to degradation of processing quality, but also acts as potential threat to optical switching elements. Several methods have been developed to suppress that effect, including electronic controls, polarization controls, and diffraction controls. We present a new way for first pulse self-suppression without any additional components. By carefully arranging the cavity mirror of a regenerative amplifier, we realized `parasitic lasing like' radiation. When the regenerative amplifier works in `operation ready' status, the parasitic lasing occurs and prevents the gain crystal from saturation. When the regenerative amplifier starts working and amplifying pulses, the first pulse in a pulse train will not get much more gain and energy than pulses following it. As parasitic lasing disappears at the same time, the average output power of the amplifier does not significantly reduce. This cost effective method does not require any additional component. In addition, as it is not polarization dependent, this method is widely suitable for different kinds of regenerative amplifiers. It's the easiest and cheapest way to suppress first pulse effect, to the best of our knowledge.

Ideal photon number amplifier and duplicator

NASA Technical Reports Server (NTRS)

Dariano, G. M.

1992-01-01

The photon number-amplification and number-duplication mechanism are analyzed in the ideal case. The search for unitary evolutions leads to consider also a number-deamplification mechanism, the symmetry between amplification and deamplification being broken by the integer-value nature of the number operator. Both transformations, amplification and duplication, need an auxiliary field which, in the case of amplification, turns out to be amplified in the inverse way. Input-output energy conservation is accounted for using a classical pump or through frequency-conversion of the fields. Ignoring one of the fields is equivalent to considering the amplifier as an open system involving entropy production. The Hamiltonians of the ideal devices are given and compared with those of realistic systems.

A digitally assisted, signal folding neural recording amplifier.

PubMed

Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

2014-08-01

A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

Triple inverter pierce oscillator circuit suitable for CMOS

DOEpatents

Wessendorf,; Kurt, O [Albuquerque, NM

2007-02-27

An oscillator circuit is disclosed which can be formed using discrete field-effect transistors (FETs), or as a complementary metal-oxide-semiconductor (CMOS) integrated circuit. The oscillator circuit utilizes a Pierce oscillator design with three inverter stages connected in series. A feedback resistor provided in a feedback loop about a second inverter stage provides an almost ideal inverting transconductance thereby allowing high-Q operation at the resonator-controlled frequency while suppressing a parasitic oscillation frequency that is inherent in a Pierce configuration using a "standard" triple inverter for the sustaining amplifier. The oscillator circuit, which operates in a range of 10 50 MHz, has applications for use as a clock in a microprocessor and can also be used for sensor applications.

Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier

NASA Astrophysics Data System (ADS)

Hirata, T.; Okazaki, T.; Obara, K.; Yano, H.; Ishikawa, O.

2017-06-01

This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid {}^3He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2-6 MHz.

A microwave cryogenic low-noise amplifier based on sige heterostructures

NASA Astrophysics Data System (ADS)

Ivanov, B. I.; Grajcar, M.; Novikov, I. L.; Vostretsov, A. G.; Il'ichev, E.

2016-04-01

A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude-frequency response of the "supercon-ducting qubit-coplanar cavity" structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

Modulation instability in high power laser amplifiers.

PubMed

Rubenchik, Alexander M; Turitsyn, Sergey K; Fedoruk, Michail P

2010-01-18

The modulation instability (MI) is one of the main factors responsible for the degradation of beam quality in high-power laser systems. The so-called B-integral restriction is commonly used as the criteria for MI control in passive optics devices. For amplifiers the adiabatic model, assuming locally the Bespalov-Talanov expression for MI growth, is commonly used to estimate the destructive impact of the instability. We present here the exact solution of MI development in amplifiers. We determine the parameters which control the effect of MI in amplifiers and calculate the MI growth rate as a function of those parameters. The safety range of operational parameters is presented. The results of the exact calculations are compared with the adiabatic model, and the range of validity of the latest is determined. We demonstrate that for practical situations the adiabatic approximation noticeably overestimates MI. The additional margin of laser system design is quantified.

High Power Amplifier Harmonic Output Level Measurement

NASA Technical Reports Server (NTRS)

Perez, R. M.; Hoppe, D. J.; Khan, A. R.

1995-01-01

A method is presented for the measurement of the harmonic output power of high power klystron amplifiers, involving coherent hemispherical radiation pattern measurements of the radiated klystron output. Results are discussed for the operation in saturated and unsaturated conditions, and with a waveguide harmonic filter included.

NON-BLOCKING STABILIZED FEED BACK AMPLIFIER

DOEpatents

Fairstein, E.

1960-03-01

A plural stuge nonblocking degenerative feed-back amplifier was designed particularly suitable for counting circuits because of the stability and linearity in operation, characterized by the fact that the inltial stage employs a cathode coupled input circuit fed from a cathode follower and the final stage has a tline constant greater than those of the other stages.

High efficiency RF amplifier development over wide dynamic range for accelerator application

NASA Astrophysics Data System (ADS)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

Design of ultra-low power biopotential amplifiers for biosignal acquisition applications.

PubMed

Zhang, Fan; Holleman, Jeremy; Otis, Brian P

2012-08-01

Rapid development in miniature implantable electronics are expediting advances in neuroscience by allowing observation and control of neural activities. The first stage of an implantable biosignal recording system, a low-noise biopotential amplifier (BPA), is critical to the overall power and noise performance of the system. In order to integrate a large number of front-end amplifiers in multichannel implantable systems, the power consumption of each amplifier must be minimized. This paper introduces a closed-loop complementary-input amplifier, which has a bandwidth of 0.05 Hz to 10.5 kHz, an input-referred noise of 2.2 μ Vrms, and a power dissipation of 12 μW. As a point of comparison, a standard telescopic-cascode closed-loop amplifier with a 0.4 Hz to 8.5 kHz bandwidth, input-referred noise of 3.2 μ Vrms, and power dissipation of 12.5 μW is presented. Also for comparison, we show results from an open-loop complementary-input amplifier that exhibits an input-referred noise of 3.6 μ Vrms while consuming 800 nW of power. The two closed-loop amplifiers are fabricated in a 0.13 μ m CMOS process. The open-loop amplifier is fabricated in a 0.5 μm SOI-BiCMOS process. All three amplifiers operate with a 1 V supply.

Integration & Validation of LCU with Different Sub-systems for Diacrode based amplifier

NASA Astrophysics Data System (ADS)

Rajnish, Kumar; Verma, Sriprakash; Soni, Dipal; Patel, Hriday; Suthar, Gajendra; Dalicha, Hrushikesh; Dhola, Hitesh; Patel, Amit; Upadhayay, Dishang; Jha, Akhil; Patel, Manoj; Trivedi, Rajesh; Machchhar, Harsha; Singh, Raghuraj; Mukherjee, Aparajita

2017-04-01

ITER-India is responsible to deliver nine (8+1 spare) ICH & CD Power Sources to ITER. Each power source is capable to deliver 2.5 MW at 35 to 65 MHz frequency range with a load condition up to VSWR 2:1. For remote operation of different subsystems, Local Control Unit (LCU) is developed. LCU is developed using PXI hardware and Schneider PLC with Lab VIEW-RT developmental environment. All the protection function of the amplifier is running on PXI 7841 R module that ensures hard wired protection logic. There are three level of protection function- first by power supply itself that detects overcurrent/overvoltage and trips itself and generate trip signal for further action. There are some direct hardwired signal interfaces between power supplies to protect the amplifier. Second level of protection is generated through integrated controller of amplifier i.e. Command Control Embedded (CCE) against arc and Anode over current. Third level of Protection is through LCU where different fault signals are received and processed to generate off command for different sub-systems. Before connecting different subsystem with High power RF amplifiers (Driver & Final stage), each subsystem is individually tested through LCU. All protection functions are tested before hooking up the subsystems with main amplifier and initiating RF operation.

Controlling the 1 μm spontaneous emission in Er/Yb co-doped fiber amplifiers.

PubMed

Sobon, Grzegorz; Kaczmarek, Pawel; Antonczak, Arkadiusz; Sotor, Jaroslaw; Abramski, Krzysztof M

2011-09-26

In this paper we present our experimental studies on controlling the amplified spontaneous emission (ASE) from Yb(3+) ions in Er/Yb co-doped fiber amplifiers. We propose a new method of controlling the Yb-ASE by stimulating a laser emission at 1064 nm in the amplifier, by providing a positive 1 μm signal feedback loop. The results are discussed and compared to a conventional amplifier setup without 1 μm ASE control and to an amplifier with auxiliary 1064 nm seeding. We have shown, that applying a 1064 nm signal loop in an Er/Yb amplifier can increase the output power at 1550 nm and provide stable operation without parasitic lasing at 1 μm. © 2011 Optical Society of America

Solid-state repetitive generator with a gyromagnetic nonlinear transmission line operating as a peak power amplifier

NASA Astrophysics Data System (ADS)

Gusev, A. I.; Pedos, M. S.; Rukin, S. N.; Timoshenkov, S. P.

2017-07-01

In this work, experiments were made in which gyromagnetic nonlinear transmission line (NLTL) operates as a peak power amplifier of the input pulse. At such an operating regime, the duration of the input pulse is close to the period of generated oscillations, and the main part of the input pulse energy is transmitted only to the first peak of the oscillations. Power amplification is achieved due to the voltage amplitude of the first peak across the NLTL output exceeding the voltage amplitude of the input pulse. In the experiments, the input pulse with an amplitude of 500 kV and a half-height pulse duration of 7 ns is applied to the NLTL with a natural oscillation frequency of ˜300 MHz. At the output of the NLTL in 40 Ω coaxial transmission line, the pulse amplitude is increased to 740 kV and the pulse duration is reduced to ˜2 ns, which correspond to power amplification of the input pulse from ˜6 to ˜13 GW. As a source of input pulses, a solid-state semiconductor opening switch generator was used, which allowed carrying out experiments at pulse repetition frequency up to 1 kHz in the burst mode of operation.

Frequency-Offset Cartesian Feedback Based on Polyphase Difference Amplifiers

PubMed Central

Zanchi, Marta G.; Pauly, John M.; Scott, Greig C.

2010-01-01

A modified Cartesian feedback method called “frequency-offset Cartesian feedback” and based on polyphase difference amplifiers is described that significantly reduces the problems associated with quadrature errors and DC-offsets in classic Cartesian feedback power amplifier control systems. In this method, the reference input and feedback signals are down-converted and compared at a low intermediate frequency (IF) instead of at DC. The polyphase difference amplifiers create a complex control bandwidth centered at this low IF, which is typically offset from DC by 200–1500 kHz. Consequently, the loop gain peak does not overlap DC where voltage offsets, drift, and local oscillator leakage create errors. Moreover, quadrature mismatch errors are significantly attenuated in the control bandwidth. Since the polyphase amplifiers selectively amplify the complex signals characterized by a +90° phase relationship representing positive frequency signals, the control system operates somewhat like single sideband (SSB) modulation. However, the approach still allows the same modulation bandwidth control as classic Cartesian feedback. In this paper, the behavior of the polyphase difference amplifier is described through both the results of simulations, based on a theoretical analysis of their architecture, and experiments. We then describe our first printed circuit board prototype of a frequency-offset Cartesian feedback transmitter and its performance in open and closed loop configuration. This approach should be especially useful in magnetic resonance imaging transmit array systems. PMID:20814450

338-GHz Semiconductor Amplifier Module

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Fung, King Man; Rasisic, Vesna; Deal, William; Leong, Kevin; Mei, Xiao Bing; Yoshida, Wayne; Liu, Po-Hsin;

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1989-01-01

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

A Mixed Mode Cochlear Amplifier Including Neural Feedback

NASA Astrophysics Data System (ADS)

Flax, Matthew R.; Holmes, W. Harvey

2011-11-01

The mixed mode cochlear amplifier (MMCA) model is derived from the physiology of the cochlea. It is comprised of three main elements of the peripheral hearing system: the cochlear mechanics, hair cell motility, and neurophysiology. This model expresses both active compression wave and active traveling wave modes of operation. The inclusion of a neural loop with a time delay, and a new paradigm for the mechanical response of the outer hair cells, are believed to be unique features of the MMCA. These elements combine to form an active feedback loop to constitute the cochlear amplifier, whose input is a passive traveling wave vibration. The result is a cycle-by-cycle amplifier with nonlinear response. This system can assume an infinite number of different operating states. The stable state and the first few amplitude-limited unstable (Hopf-bifurcated) states are significant in describing the operation of the peripheral hearing system. A hierarchy of models can be constructed from this concept, depending on the amount of detail included. The simplest model of the MMCA is a nonlinear delay line resonator. It was found that even this simple MMCA version can explain a large number of hearing phenomena, at least qualitatively. This paper concentrates on explaining the fractional octave shift from the living to postmortem response in terms of the new model. Other mechanical, hair cell and neurological phenomena can also be accounted for by the MMCA, including two-tone suppression behavior, distortion product responses, otoacoustic emissions and neural spontaneous rates.

100J-level nanosecond pulsed Yb:YAG cryo-cooled DPSSL amplifier

NASA Astrophysics Data System (ADS)

Smith, J. M.; Butcher, T. J.; Mason, P. D.; Ertel, K.; Phillips, P. J.; Banerjee, S.; De Vido, M.; Chekhlov, O.; Divoky, M.; Pilar, J.; Shaikh, W.; Hooker, C.; Lucianetti, A.; Hernandez Gomez, C.; Mocek, T.; Edwards, C.; Collier, J. L.

2018-02-01

We report on the successful demonstration of the world's first kW average power, 100 Joule-class, high-energy, nanosecond pulsed diode-pumped solid-state laser (DPSSL), DiPOLE100. Results from the first long-term test for amplification will be presented; the system was operated for 1 hour with 10 ns duration pulses at 10 Hz pulse repetition rate and an average output energy of 105 J and RMS energy stability of approximately 1%. The laser system is based on scalable cryogenic gas-cooled multi-slab ceramic Yb:YAG amplifier technology. The DiPOLE100 system comprises three major sub-systems, a spatially and temporally shaped front end, a 10 J cryo-amplifier and a 100 J cryo-amplifier. The 10 J cryo-amplifier contain four Yb:YAG ceramic gain media slabs, which are diode pumped from both sides, while a multi-pass architecture configured for seven passes enables 10 J of energy to be extracted at 10 Hz. This seeds the 100 J cryo-amplifier, which contains six Yb:YAG ceramic gain media slabs with the multi-pass configured for four passes. Our future development plans for this architecture will be introduced including closed-loop pulse shaping, increased energy, higher repetition rates and picosecond operation. This laser architecture unlocks the potential for practical applications including new sources for industrial materials processing and high intensity laser matter studies as envisioned for ELI [1], HiLASE [2], and the European XFEL [3]. Alternatively, it can be used as a pump source for higher repetition rate PW-class amplifiers, which can themselves generate high-brightness secondary radiation and ion sources leading to new remote imaging and medical applications.

High-quality recording of bioelectric events. Part 2. Low-noise, low-power multichannel amplifier design.

PubMed

Metting van Rijn, A C; Peper, A; Grimbergen, C A

1991-07-01

A multichannel instrumentation amplifier, developed to be used in a miniature universal eight-channel amplifier module, is described. After discussing the specific properties of a bioelectric recording, the difficulties of meeting the demanded specifications with a design based on operational amplifiers are reviewed. Because it proved impossible to achieve the demanded combination of low noise and low power consumption using commercially available operational amplifiers, an amplifier equipped with an input stage with discrete transistors was developed. A new design concept was used to expand the design to a multichannel version with an equivalent input noise voltage of 0.35 microV RMS in a bandwidth of 0.1-100 Hz and a power consumption of 0.6 mW per channel. The results of this study are applied to miniature, universal, eight-channel amplifier modules, manufactured with thick-film production techniques. The modules can be coupled to satisfy the demand for a multiple of eight channels. The low power consumption enables the modules to be used in all kinds of portable and telemetry measurement systems and simplifies the power supply in stationary measurement systems.

High Efficiency Microwave Power Amplifier: From the Lab to Industry

NASA Technical Reports Server (NTRS)

Sims, William Herbert, III; Bell, Joseph L. (Technical Monitor)

2001-01-01

Since the beginnings of space travel, various microwave power amplifier designs have been employed. These included Class-A, -B, and -C bias arrangements. However, shared limitation of these topologies is the inherent high total consumption of input power associated with the generation of radio frequency (RF)/microwave power. The power amplifier has always been the largest drain for the limited available power on the spacecraft. Typically, the conversion efficiency of a microwave power amplifier is 10 to 20%. For a typical microwave power amplifier of 20 watts, input DC power of at least 100 watts is required. Such a large demand for input power suggests that a better method of RF/microwave power generation is required. The price paid for using a linear amplifier where high linearity is unnecessary includes higher initial and operating costs, lower DC-to-RF conversion efficiency, high power consumption, higher power dissipation and the accompanying need for higher capacity heat removal means, and an amplifier that is more prone to parasitic oscillation. The first use of a higher efficiency mode of power generation was described by Baxandall in 1959. This higher efficiency mode, Class-D, is achieved through distinct switching techniques to reduce the power losses associated with switching, conduction, and gate drive losses of a given transistor.

A third-order class-D amplifier with and without ripple compensation

NASA Astrophysics Data System (ADS)

Cox, Stephen M.; du Toit Mouton, H.

2018-06-01

We analyse the nonlinear behaviour of a third-order class-D amplifier, and demonstrate the remarkable effectiveness of the recently introduced ripple compensation (RC) technique in reducing the audio distortion of the device. The amplifier converts an input audio signal to a high-frequency train of rectangular pulses, whose widths are modulated according to the input signal (pulse-width modulation) and employs negative feedback. After determining the steady-state operating point for constant input and calculating its stability, we derive a small-signal model (SSM), which yields in closed form the transfer function relating (infinitesimal) input and output disturbances. This SSM shows how the RC technique is able to linearise the small-signal response of the device. We extend this SSM through a fully nonlinear perturbation calculation of the dynamics of the amplifier, based on the disparity in time scales between the pulse train and the audio signal. We obtain the nonlinear response of the amplifier to a general audio signal, avoiding the linearisation inherent in the SSM; we thereby more precisely quantify the reduction in distortion achieved through RC. Finally, simulations corroborate our theoretical predictions and illustrate the dramatic deterioration in performance that occurs when the amplifier is operated in an unstable regime. The perturbation calculation is rather general, and may be adapted to quantify the way in which other nonlinear negative-feedback pulse-modulated devices track a time-varying input signal that slowly modulates the system parameters.

Active spectral shaping with polarization-encoded Ti:sapphire amplifiers for sub-20 fs multi-terawatt systems

NASA Astrophysics Data System (ADS)

Cao, H.; Kalashnikov, M.; Osvay, K.; Khodakovskiy, N.; Nagymihaly, R. S.; Chvykov, V.

2018-04-01

A combination of a polarization-encoded (PE) and a conventional multi-pass amplifier was studied to overcome gain narrowing in the Ti:sapphire active medium. The seed spectrum was pre-shaped and blue-shifted during PE amplification and was then further broadened in a conventional, saturated multi-pass amplifier, resulting in an overall increase of the amplified bandwidth. Using this technique, seed pulses of 44 nm were amplified and simultaneously spectrally broadened to 57 nm without the use of passive spectral corrections. The amplified pulse after the PE amplifier was recompressed to 19 fs. The supported simulations confirm all aspects of experimental operation.

High power diode laser Master Oscillator-Power Amplifier (MOPA)

NASA Technical Reports Server (NTRS)

Andrews, John R.; Mouroulis, P.; Wicks, G.

1994-01-01

High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

Multiband Reconfigurable Harmonically Tuned Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA) for Cognitive Radios

NASA Technical Reports Server (NTRS)

Waldstein, Seth W.; Kortright, Barbosa Miguel A.; Simons, Rainee N.

2017-01-01

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse Class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6 percent, and Drain Efficiency (DE) of 48.9 percent under continuous wave (CW) operation.

High brightness photonic lantern kW-class amplifier

NASA Astrophysics Data System (ADS)

Montoya, Juan; Hwang, Chris; Aleshire, Chris; Reed, Patricia; Martz, Dale; Riley, Mike; Trainor, Michael; Belley, Catherine; Shaw, Scot; Fan, T. Y.; Ripin, Dan

2018-02-01

Pump-limited kW-class operation in a multimode fiber amplifier using adaptive mode control was achieved. A photonic lantern front end was used to inject an arbitrary superposition of modes on the input to a kW-class fiber amplifier to achieve a nearly diffraction-limited output. We report on the adaptive spatial mode control architecture which allows for compensating transverse-mode disturbances at high power. We also describe the advantages of adaptive spatial mode control for optical phased array systems. In particular, we show that the additional degrees of freedom allow for broader steering and improved atmospheric turbulence compensation relative to piston-only optical phased arrays.

Noise spectra in balanced optical detectors based on transimpedance amplifiers.

PubMed

Masalov, A V; Kuzhamuratov, A; Lvovsky, A I

2017-11-01

We present a thorough theoretical analysis and experimental study of the shot and electronic noise spectra of a balanced optical detector based on an operational amplifier connected in a transimpedance scheme. We identify and quantify the primary parameters responsible for the limitations of the circuit, in particular, the bandwidth and shot-to-electronic noise clearance. We find that the shot noise spectrum can be made consistent with the second-order Butterworth filter, while the electronic noise grows linearly with the second power of the frequency. Good agreement between the theory and experiment is observed; however, the capacitances of the operational amplifier input and the photodiodes appear significantly higher than those specified in manufacturers' datasheets. This observation is confirmed by independent tests.

Noise spectra in balanced optical detectors based on transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Masalov, A. V.; Kuzhamuratov, A.; Lvovsky, A. I.

2017-11-01

We present a thorough theoretical analysis and experimental study of the shot and electronic noise spectra of a balanced optical detector based on an operational amplifier connected in a transimpedance scheme. We identify and quantify the primary parameters responsible for the limitations of the circuit, in particular, the bandwidth and shot-to-electronic noise clearance. We find that the shot noise spectrum can be made consistent with the second-order Butterworth filter, while the electronic noise grows linearly with the second power of the frequency. Good agreement between the theory and experiment is observed; however, the capacitances of the operational amplifier input and the photodiodes appear significantly higher than those specified in manufacturers' datasheets. This observation is confirmed by independent tests.

Excess noise in gain-guided amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deutsch, I.H.; Garrison, J.C.; Wright, E.M.

1991-06-01

A second-quantized theory of the radiation field is used to study the origin of the excess noise observed in gain-guided amplifiers. We find that the reduction of the signal-to-noise ratio is a function of the length of the amplifier, and thus the enhancement of the noise is a propagation effect arising from longitudinally inhomogeneous gain of the noise rather than from an excess of local spontaneous emission. We confirm this conclusion by showing that the microscopic rate of spontaneous emission into a given non-power-orthogonal cavity mode is not enhanced by the Petermann factor. In addition, we illustrate the difficulties associatedmore » with photon statistics for this and other open systems by showing that no acceptable family of photon-number operators corresponds to a set of non-power-orthogonal cavity modes.« less

ULTRA-STABILIZED D. C. AMPLIFIER

DOEpatents

Hartwig, E.C.; Kuenning, R.W.; Acker, R.C.

1959-02-17

An improved circuit is described for stabilizing the drift and minimizing the noise and hum level of d-c amplifiers so that the output voltage will be zero when the input is zero. In its detailed aspects, the disclosed circuit incorporates a d-c amplifier having a signal input, a second input, and an output circuit coupled back to the first input of the amplifier through inverse feedback means. An electronically driven chopper having a pair of fixed contacts and a moveable contact alternately connects the two inputs of a difference amplifier to the signal input. The A. E. error signal produced in the difference amplifier is amplified, rectified, and applied to the second input of the amplifier as the d-c stabilizing voltage.

Radio Frequency Transistors and Circuits Based on CVD MoS2.

PubMed

Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

2015-08-12

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Kinetics of the Active Medium of a Copper Vapor Brightness Amplifier

NASA Astrophysics Data System (ADS)

Kulagin, A. E.; Torgaev, S. N.; Evtushenko, G. S.; Trigub, M. V.

2018-03-01

A spatiotemporal kinetics of the active medium of a copper vapor brightness amplifier is described that allows gain characteristics to be investigated during the pump pulse. Model calculations show that changing the discharge parameters allows the radial gain profiles to be improved significantly, as well as the gain and the inversion duration to be increased. The data obtained will be used to choose the operating conditions for the active medium in the brightness amplifier mode.

Combined Yb/Nd driver for optical parametric chirped pulse amplifiers.

PubMed

Michailovas, Kirilas; Baltuska, Andrius; Pugzlys, Audrius; Smilgevicius, Valerijus; Michailovas, Andrejus; Zaukevicius, Audrius; Danilevicius, Rokas; Frankinas, Saulius; Rusteika, Nerijus

2016-09-19

We report on the developed front-end/pump system for optical parametric chirped pulse amplifiers. The system is based on a dual output fiber oscillator/power amplifier which seeds and assures all-optical synchronization of femtosecond Yb and picosecond Nd laser amplifiers operating at a central wavelength of 1030 nm and 1064 nm, respectively. At the central wavelength of 1030 nm, the fiber oscillator generates partially stretched 4 ps pulses with the spectrum supporting a <120 fs pulse duration and pulse energy of 0.45 nJ. The energy of generated 1064 nm pulses is 0.15 nJ, which is sufficient for the efficient seeding of high-contrast Nd:YVO chirped pulse regenerative amplifier/post amplifier systems generating 9 mJ pulses compressible to 16 ps duration. The power amplification stages, based on Nd:YAG crystals, provide 62 mJ pulses compressible to 20 ps pulse duration at a repetition rate of 1 kHz. Further energy scaling currently is prevented by limited dimensions of the diffraction gratings, which, because of the fast progress in MLD grating manufacturing technologies is only a temporary obstacle.

Demonstration of a 140-GHz 1-kW Confocal Gyro-Traveling-Wave Amplifier

PubMed Central

Joye, Colin D.; Shapiro, Michael A.; Sirigiri, Jagadishwar R.; Temkin, Richard J.

2009-01-01

The theory, design, and experimental results of a wideband 140-GHz 1-kW pulsed gyro-traveling-wave amplifier (gyro-TWA) are presented. The gyro-TWA operates in the HE06 mode of an overmoded quasi-optical waveguide using a gyrating electron beam. The electromagnetic theory, interaction theory, design processes, and experimental procedures are described in detail. At 37.7 kV and a 2.7-A beam current, the experiment has produced over 820 W of peak power with a –3-dB bandwidth of 0.8 GHz and a linear gain of 34 dB at 34.7 kV. In addition, the amplifier produced a –3-dB bandwidth of over 1.5 GHz (1.1%) with a peak power of 570 W from a 38.5-kV 2.5-A electron beam. The electron beam is estimated to have a pitch factor of 0.55–0.6, a radius of 1.9 mm, and a calculated perpendicular momentum spread of approximately 9%. The gyro-amplifier was nominally operated at a pulselength of 2 μs but was tested to amplify pulses as short as 4 ns with no noticeable pulse broadening. Internal reflections in the amplifier were identified using these short pulses by time-domain reflectometry. The demonstrated performance of this amplifier shows that it can be applied to dynamic nuclear polarization and electron paramagnetic resonance spectroscopy. PMID:20054451

Room Temperature Erbium-Doped Yttrium Vanadate (Er:YVO4) Laser and Amplifier

DTIC Science & Technology

2016-09-01

perpendicular to the laser cavity axis, was pumped in σ-polarization and lased in π-polarization. The laser operated in a quasi -continuous wave regime...laser, amplifier, quasi -continuous wave 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT UU 18. NUMBER OF...distribution unlimited. iii Contents List of Figures iv 1. Introduction 1 2. Laser Experimental Setup and Results 2 3. Laser Amplifier Setup 6 4

DISTRIBUTED AMPLIFIER INCORPORATING FEEDBACK

DOEpatents

Bell, P.R. Jr.

1958-10-21

An improved distributed amplifier system employing feedback for stabilization is presented. In accordance with the disclosed invention, a signal to be amplified is applled to one end of a suitable terminated grid transmission line. At intervals along the transmission line, the signal is fed to stable, resistance-capacitance coupled amplifiers incorporating feedback loops therein. The output current from each amplifier is passed through an additional tube to minimize the electrostatic capacitance between the tube elements of the last stage of the amplifier, and fed to appropriate points on an output transmission line, similar to the grid line, but terminated at the opposite (input) end. The output taken from the unterminated end of the plate transmission line is proportional to the input voltage impressed upon the grid line.

A high gain energy amplifier operated with fast neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubbia, C.

1995-10-01

The basic concept and the main practical considerations of an Energy Amplifier (EA) have been exhaustively described elsewhere. Here the concept of the EA is further explored and additional schemes are described which offer a higher gain, a larger maximum power density and an extended burn-up. All these benefits stem from the use of fast neutrons, instead of thermal or epithermal ones, which was the case in the original study. The higher gain is due both to a more efficient high energy target configuration and to a larger, practical value of the multiplication factor. The higher power density results frommore » the higher permissible neutron flux, which in turn is related to the reduced rate of {sup 233}Pa neutron captures (which, as is well known, suppress the formation of the fissile {sup 233}U fuel) and the much smaller k variations after switch-off due to {sup 233}Pa decays for a given burn-up rate. Finally a longer integrated burn-up is made possible by reduced capture rate by fission fragments of fast neutrons. In practice a 20 MW proton beam (20 mA @ 1 GeV) accelerated by a cyclotron will suffice to operate a compact EA at the level of {approx} 1 GW{sub e}. The integrated fuel burn-up can be extended in excess of 100 GW d/ton, limited by the mechanical survival of the fuel elements. Radio-Toxicity accumulated at the end of the cycle is found to be largely inferior to the one of an ordinary Reactor for the same energy produced. Schemes are proposed which make a {open_quotes}melt-down{close_quotes} virtually impossible. The conversion ratio, namely the rate of production of {sup 233}U relative to consumption is generally larger than unity, which permits production of fuel for other uses. Alternatively the neutron excess can be used to transform unwanted {open_quotes}ashes{close_quotes} into more acceptable elements.« less

Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.

NASA Technical Reports Server (NTRS)

Pi, C.; Dunn, W. R., Jr.

1972-01-01

A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.

Portable Amplifier Design for a Novel EEG Monitor in Point-of-Care Applications.

PubMed

Luan, Bo; Sun, Mingui; Jia, Wenyan

2012-01-01

The Electroencephalography (EEG) is a common diagnostic tool for neurological diseases and dysfunctions, such as epilepsy and insomnia. However, the current EEG technology cannot be utilized quickly and conveniently at the point of care due to the complex skin preparation procedures required and the inconvenient EEG data acquisition systems. This work presents a portable amplifier design that integrates a set of skin screw electrodes and a wireless data link. The battery-operated amplifier contains an instrumentation amplifier, two noninverting amplifiers, two high-pass filters, and a low-pass filter. It is able to magnify the EEG signals over 10,000 times and has a high impedance, low noise, small size and low weight. Our electrode and amplifier are ideal for point-of-care applications, especially during transportation of patients suffering from traumatic brain injury or stroke.

Compact laser amplifier system

DOEpatents

Carr, R.B.

1974-02-26

A compact laser amplifier system is described in which a plurality of face-pumped annular disks, aligned along a common axis, independently radially amplify a stimulating light pulse. Partially reflective or lasing means, coaxially positioned at the center of each annualar disk, radially deflects a stimulating light directed down the common axis uniformly into each disk for amplification, such that the light is amplified by the disks in a parallel manner. Circumferential reflecting means coaxially disposed around each disk directs amplified light emission, either toward a common point or in a common direction. (Official Gazette)

CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

PubMed

An Hu; Chodavarapu, Vamsy P

2010-10-01

We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

Stable photosensor amplifiers

NASA Technical Reports Server (NTRS)

Fujimoto, H.

1972-01-01

Minimization of common mode effects in differential amplifier arrangement which processes signals from two high impedance photosensors is achieved by connecting one photosensor in feedback loop of amplifier and using field effect transistors in the input circuit.

Development of a HgCdTe photomixer and impedance matched GaAs FET amplifier

NASA Technical Reports Server (NTRS)

Shanley, J. F.; Paulauskas, W. A.; Taylor, D. R.

1982-01-01

A research program for the development of a 10.6 micron HgCdTe photodiode/GaAs field effect transistor amplifier package for use at cryogenic temperatures (77k). The photodiode/amplifier module achieved a noise equivalent power per unit bandwidth of 5.7 times 10 to the 20th power W/Hz at 2.0 GHz. The heterodyne sensitivity of the HgCdTe photodiode was improved by designing and building a low noise GaAs field effect transistor amplifier operating at 77K. The Johnson noise of the amplifier was reduced at 77K, and thus resulted in an increased photodiode heterodyne sensitivity.

Development of injector/amplifier XUV lasers and initial studies of ultrashort pulse UV multiphoton ionization

NASA Astrophysics Data System (ADS)

Key, Michael H.; Blyth, W. J.; Cairns, Gerald F.; Damerell, A. R.; Dangor, A. E.; Danson, Colin N.; Evans, J. M.; Hirst, Graeme J.; Holden, M.; Hooker, Chris J.; Houliston, J. R.; Krishnan, J.; Lewis, Ciaran L. S.; Lister, J. M. D.; MacPhee, Andrew G.; Najmudin, Z.; Neely, David; Norreys, Peter A.; Offenberger, Allen A.; Osvay, Karoly; Pert, Geoffrey J.; Preston, S. G.; Ramsden, Stuart A.; Ross, Ian N.; Sibbett, Wilson; Tallents, Gregory J.; Smith, C.; Wark, Justin S.; Zhang, Jie

1994-02-01

An injector-amplifier architecture for XUV lasers has been developed and demonstrated using the Ge XXIII collisional laser. Results are described for injection into single and double plasma amplifiers. Prismatic lens-like and higher order aberrations in the amplifier are considered. Limitations on ultimate brightness are discussed and also scaling to operation at shorter wavelengths. A preliminary study has been made of UV multiphoton ionization using 300 fs pulses at high intensity.

Low Noise Amplifiers for 140 Ghz Wide-Band Cryogenic Receivers

NASA Technical Reports Server (NTRS)

Larkoski, Patricia V.; Kangaslahti, Pekka; Samoska, Lorene; Lai, Richard; Sarkozy, Stephen

2013-01-01

We report S-parameter and noise measurements for three different Indium Phosphide 35-nanometer-gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifier (LNA) designs operating in the frequency range centered on 140 gigahertz. When packaged in a Waveguide Rectangular-6.1 waveguide housing, the LNAs have an average measured noise figure of 3.0 decibels - 3.6 decibels over the 122-170 gigahertz band. One LNA was cooled to 20 degrees Kelvin and a record low noise temperature of 46 Kelvin, or 0.64 decibels noise figure, was measured at 152 gigahertz. These amplifiers can be used to develop receivers for instruments that operate in the 130-170 gigahertz atmospheric window, which is an important frequency band for ground-based astronomy and millimeter-wave imaging applications.

Self-Calibrating and Remote Programmable Signal Conditioning Amplifier System and Method

NASA Technical Reports Server (NTRS)

Medelius, Pedro J. (Inventor); Hallberg, Carl G. (Inventor); Simpson, Howard J., III (Inventor); Thayer, Stephen W. (Inventor)

1998-01-01

A self-calibrating, remote programmable signal conditioning amplifier system employs information read from a memory attached to a measurement transducer for automatic calibration. The signal conditioning amplifier is self-calibrated on a continuous basis through use of a dual input path arrangement, with each path containing a multiplexer and a programmable amplifier. A digital signal processor controls operation of the system such that a transducer signal is applied to one of the input paths, while one or more calibration signals are applied to the second input path. Once the second path is calibrated, the digital signal processor switches the transducer signal to the second path. and then calibrates the first path. This process is continually repeated so that each path is calibrated on an essentially continuous basis. Dual output paths are also employed which are calibrated in the same manner. The digital signal processor also allows the implementation of a variety of digital filters which are either programmed into the system or downloaded by an operator, and performs up to eighth order linearization.

DIRECT COUPLED AMPLIFIER

DOEpatents

Dandl, R.A.

1961-09-19

A transistor amplifier is designed for vyery small currents below 10/sup -8/ amperes. The filrst and second amplifier stages use unusual selected transistors in which the current amplification increases markedly for values of base current below 10/sup -6/ amperes.

Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same

DOEpatents

O'Connor, Paul

1998-08-11

A monolithic amplifier includes a stable, high resistance feedback circuit and a dynamic bias circuit. The dynamic bias circuit is formed with active elements matched to those in the amplifier and feedback circuit to compensate for variations in the operating and threshold voltages thereby maintaining a stable resistance in the feedback circuit.

Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas

NASA Astrophysics Data System (ADS)

Vendik, O. G.; Vendik, I. B.; Tural'chuk, P. A.; Parnes, Ya. M.; Parnes, M. D.

2016-11-01

A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated.

Efficient Operation of Conductively Cooled Ho:Tm:LuLiF Laser Oscillator/Amplifier

NASA Technical Reports Server (NTRS)

Yu, Jirong; Bai, Yingxin; Trieu, Bo; Petros, M.; Petzar, Paul; Lee, Hyung; Singh, U.

2008-01-01

A conductively-cooled Ho:Tm:LuLiF laser oscillator generates 1.6J normal mode pulses at 10Hz with optical to optical efficiency of 20%. When the laser head module is used as the amplifier, the double-pass small-signal amplification excesses 25.

Development of a W-band Serpentine Waveguide Amplifier based on a UV-LIGA Microfabricated Copper Circuit

DTIC Science & Technology

2013-03-01

beam tunnel [5,6] for a high - power , wideband W- band traveling-wave tube (TWT) amplifier. UV-LIGA is also a promising technique at higher...wide- band , high - power operation of the amplifier [7, 8]. The interaction circuit consists of two traveling-wave stages separated by a power ...technique produces monolithic all-copper circuits, integrated with electron beam tunnel, suitable for high - power continuous-wave operation [1]. We

A wavelength scannable XeCl oscillator-ring amplifier laser system

NASA Technical Reports Server (NTRS)

Pacala, T. J.; Mcdermid, I. S.; Laudenslager, J. B.

1982-01-01

A holographic grating at grazing angle of incidence was used to achieve tunable, narrow bandwidth (0.005 nm) operation of a XeCl oscillator for injection locking of a ring amplifier. The amplifier's narrow bandwidth output energy was constant and equal to the untuned, broadband output (approximately 15 mJ) in regions where injection locking was achieved. Scanning was provided by use of a stepping motor-driven differential micrometer on the tuning mirror. This system was used to produce a laser excitation spectrum of hydroxyl radicals (OH) in a flame.

High power regenerative laser amplifier

DOEpatents

Miller, John L.; Hackel, Lloyd A.; Dane, Clifford B.; Zapata, Luis E.

1994-01-01

A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse.

High power regenerative laser amplifier

DOEpatents

Miller, J.L.; Hackel, L.A.; Dane, C.B.; Zapata, L.E.

1994-02-08

A regenerative amplifier design capable of operating at high energy per pulse, for instance, from 20-100 Joules, at moderate repetition rates, for instance from 5-20 Hertz is provided. The laser amplifier comprises a gain medium and source of pump energy coupled with the gain medium; a Pockels cell, which rotates an incident beam in response to application of a control signal; an optical relay system defining a first relay plane near the gain medium and a second relay plane near the rotator; and a plurality of reflectors configured to define an optical path through the gain medium, optical relay and Pockels cell, such that each transit of the optical path includes at least one pass through the gain medium and only one pass through the Pockels cell. An input coupler, and an output coupler are provided, implemented by a single polarizer. A control circuit coupled to the Pockels cell generates the control signal in timed relationship with the input pulse so that the input pulse is captured by the input coupler and proceeds through at least one transit of the optical path, and then the control signal is applied to cause rotation of the pulse to a polarization reflected by the polarizer, after which the captured pulse passes through the gain medium at least once more and is reflected out of the optical path by the polarizer before passing through the rotator again to provide an amplified pulse. 7 figures.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, Kwang S.; Hwang, In Heon

1990-01-01

The optimum conditions of a solar pumped iodine laser are found in this research for the case of a continuous wave operation and a pulsed operation. The optimum product of the pressure(p) inside the laser tube and the tube diameter(d) was pd=40 approx. 50 torr-cm on the contrary to the case of a high intensity flashlamp pumped iodine laser where the optimum value of the product is known to be pd=150 torr-cm. The pressure-diameter product is less than 1/3 of that of the high power iodine laser. During the research period, various laser materials were also studied for solar pumping. Among the laser materials, Nd:YAG is found to have the lowest laser threshold pumping intensity of about 200 solar constant. The Rhodamine 6G was also tested as the solar pumped laser material. The threshold pumping power was measured to be about 20,000 solar constant. The amplification experiment for a continuously pumped iodine laser amplifier was performed using Vortek solar simulator and the amplification factors were measured for single pass amplification and triple pass amplification of the 15 cm long amplifier tube. The amplification of 5 was obtained for the triple pass amplification.

Cryogenic cooling for high power laser amplifiers

NASA Astrophysics Data System (ADS)

Perin, J. P.; Millet, F.; Divoky, M.; Rus, B.

2013-11-01

Using DPSSL (Diode Pumped Solid State Lasers) as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz). The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K-170 K with a heat flux of 1 MW*m-2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

Optical devices integrated with semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Oh, Kwang R.; Park, Moon S.; Jeong, Jong S.; Baek, Yongsoon; Oh, Dae-Kon

2000-07-01

Semiconductor optical amplifiers (SOA's) have been used as a key optical component for the high capacity communication systems. The monolithic integration is necessary for the stable operation of these devices and the wider applications. In this paper, the coupling technique between different waveguides and the integration of SSC's are discussed and the research results of optical devices integrated with SOA's are presented.

Ka-Band Waveguide 2-Way Hybrid Combiner for MMIC Amplifiers with Unequal and Arbitrary Power Output Ratio

NASA Technical Reports Server (NTRS)

Simons, Rainee N (Inventor); Chevalier, Christine T (Inventor); Wintucky, Edwin G (Inventor); Freeman, Jon C (Inventor)

2016-01-01

One or more embodiments of the present invention describe an apparatus and method to combine unequal powers. The apparatus includes a first input port, a second input port, and a combiner. The first input port is operably connected to a first power amplifier and is configured to receive a first power from the first power amplifier. The second input port is operably connected to a second power amplifier and is configured to receive a second power from the second power amplifier. The combiner is configured to simultaneously receive the first power from the first input port and the second power from the second input port. The combiner is also configured to combine the first power and second power to produce a maximized power. The first power and second power are unequal.

Monolithic amplifier with stable, high resistance feedback element and method for fabricating the same

DOEpatents

O`Connor, P.

1998-08-11

A monolithic amplifier includes a stable, high resistance feedback circuit and a dynamic bias circuit. The dynamic bias circuit is formed with active elements matched to those in the amplifier and feedback circuit to compensate for variations in the operating and threshold voltages thereby maintaining a stable resistance in the feedback circuit. 11 figs.

A 23-dB bismuth-doped optical fiber amplifier for a 1700-nm band

PubMed Central

Firstov, Sergei V.; Alyshev, Sergey V.; Riumkin, Konstantin E.; Khopin, Vladimir F.; Guryanov, Alexey N.; Melkumov, Mikhail A.; Dianov, Evgeny M.

2016-01-01

It is now almost twenty-five years since the first Erbium-Doped Fiber Amplifier (EDFA) was demonstrated. Currently, the EDFA is one of the most important elements widely used in different kinds of fiber-optic communication systems. However, driven by a constantly increasing demand, the network traffic, growing exponentially over decades, will lead to the overload of these systems (“capacity crunch”) because the operation of the EDFA is limited to a spectral region of 1530–1610 nm. It will require a search for new technologies and, in this respect, the development of optical amplifiers for new spectral regions can be a promising approach. Most of fiber-optic amplifiers are created using rare-earth-doped materials. As a result, wide bands in shorter (1150–1530 nm) and longer wavelength (1600–1750 nm) regions with respect to the gain band of Er-doped fibers are still uncovered. Here we report on the development of a novel fiber amplifier operating in a spectral region of 1640–1770 nm pumped by commercially available laser diodes at 1550 nm. This amplifier was realized using bismuth-doped high-germania silicate fibers fabricated by MCVD technique. PMID:27357592

Compact, Single-Stage MMIC InP HEMT Amplifier

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard

2008-01-01

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

Integrated injection seeded terahertz source and amplifier for time-domain spectroscopy.

PubMed

Maysonnave, J; Jukam, N; Ibrahim, M S M; Maussang, K; Madéo, J; Cavalié, P; Dean, P; Khanna, S P; Steenson, D P; Linfield, E H; Davies, A G; Tignon, J; Dhillon, S S

2012-02-15

We used a terahertz (THz) quantum cascade laser (QCL) as an integrated injection seeded source and amplifier for THz time-domain spectroscopy. A THz input pulse is generated inside a QCL by illuminating the laser facet with a near-IR pulse from a femtosecond laser and amplified using gain switching. The THz output from the QCL is found to saturate upon increasing the amplitude of the THz input power, which indicates that the QCL is operating in an injection seeded regime.

Amplifiers for bioelectric events: a design with a minimal number of parts.

PubMed

MettingVanRijn, A C; Peper, A; Grimbergen, C A

1994-05-01

A design for an amplifier for bioelectric events is presented that has fewer parts than conventional designs. The design allows the construction of amplifiers of a high quality in terms of noise and common mode rejection, with reduced dimensions and with a lower power consumption. Gain, bandwidth and number of channels are easily adapted to a wide range of biomedical applications. An application example is given in the form of a multichannel EEG amplifier (gain is 20,000), in which each channel consists of three operational amplifiers (one single and one dual), six resistors and two capacitors. The equivalent input noise voltage and current are 0.15 microVrms and 1 pArms, respectively, in a bandwidth of 0.2-40 Hz, and a common mode rejection ratio of 136 dB is achieved without trimming.

A fully integrated neural recording amplifier with DC input stabilization.

PubMed

Mohseni, Pedram; Najafi, Khalil

2004-05-01

This paper presents a low-power low-noise fully integrated bandpass operational amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides a stable ac gain of 39.3 dB at 1 kHz. A subthreshold PMOS input transistor is utilized to clamp the large and random dc open circuit potentials that normally exist at the electrode-electrolyte interface. The low cutoff frequency of the amplifier is programmable up to 50 Hz, while its high cutoff frequency is measured to be 9.1 kHz. The tolerable dc input range is measured to be at least +/- 0.25 V with a dc rejection factor of at least 29 dB. The amplifier occupies 0.107 mm2 in die area, and dissipates 115 microW from a 3 V power supply. The total measured input-referred noise voltage in the frequency range of 0.1-10 kHz is 7.8 microVrms. It is fabricated using AMI 1.5 microm double-poly double-metal n-well CMOS process. This paper presents full characterization of the dc, ac, and noise performance of this amplifier through in vitro measurements in saline using two different neural recording electrodes.

PHYSICAL EFFECTS OCCURRING DURING GENERATION AND AMPLIFICATION OF LASER RADIATION: Ultimate values of the gain of solid-state rod amplifiers operating under inversion storage conditions

NASA Astrophysics Data System (ADS)

Bayanov, V. I.; Vinokurov, G. N.; Zhulin, V. I.; Yashin, V. E.

1989-02-01

A numerical calculation is reported of an inversion conservation coefficient of cylindrical rod solid-state amplifiers with the active element diameter from 1.5 to 15 cm operated under continuous pumping conditions. It is shown that the ultimate gain, limited only by superluminescence, exceeds considerably the value usually obtained in experiments. Various methods of eliminating parasitic effects, which limit the gain of real amplifiers, are considered. The degree of influence of these effects on the inversion conservation coefficient is discussed. The results are given of an experimental determination of the gain close to the ultimate value (0.18 cm- 1 for an active element 3 cm in diameter). Calculations are reported of the angular distributions of superluminescence and parasitic modes demonstrating that the latter can be suppressed by spatial filtering.

FLUIDIC AC AMPLIFIERS.

DTIC Science & Technology

Several fluidic tuned AC Amplifiers were designed and tested. Interstage tuning and feedback designs are considered. Good results were obtained...corresponding Q’s as high as 12. Element designs and test results of one, two, and three stage amplifiers are presented. AC Modulated Carrier Systems

Spatial Power Combining Amplifier for Ground and Flight Applications

NASA Astrophysics Data System (ADS)

Velazco, J. E.; Taylor, M.

2016-11-01

Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross

BICMOS power detector for pulsed Rf power amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bridge, Clayton D.

2016-10-01

A BiCMOS power detector for pulsed radio-frequency power amplifiers is proposed. Given the pulse waveform and a fraction of the power amplifier's input or output signal, the detector utilizes a low-frequency feedback loop to perform a successive approximation of the amplitude of the input signal. Upon completion of the successive approximation, the detector returns 9-bits representing the amplitude of the RF input signal. Using the pulse waveform from the power amplifier, the detector can dynamically adjust the rate of the binary search operation in order to return the updated amplitude information of the RF input signal at least every 1ms.more » The detector can handle pulse waveform frequencies from 50kHz to 10MHz with duty cycles in the range of 5- 50% and peak power levels of -10 to 10dBm. The signal amplitude measurement can be converted to a peak power measurement accurate to within ±0.6dB of the input RF power.« less

Squeezing with a flux-driven Josephson parametric amplifier

NASA Astrophysics Data System (ADS)

Menzel, E. P.; Zhong, L.; Eder, P.; Baust, A.; Haeberlein, M.; Hoffmann, E.; Deppe, F.; Marx, A.; Gross, R.; di Candia, R.; Solano, E.; Ihmig, M.; Inomata, K.; Yamamoto, T.; Nakamura, Y.

2014-03-01

Josephson parametric amplifiers (JPA) are promising devices for the implementation of continuous-variable quantum communication protocols. Operated in the phase-sensitive mode, they allow for amplifying a single quadrature of the electromagnetic field without adding any noise. While in practice internal losses introduce a finite amount of noise, our device still adds less noise than an ideal phase-insensitive amplifier. This property is a prerequisite for the generation of squeezed states. In this work, we reconstruct the Wigner function of squeezed vacuum, squeezed thermal and squeezed coherent states with our dual-path method [L. Zhong et al. arXiv:1307.7285 (2013); E. P. Menzel et al. Phys. Rev. Lett. 105 100401 (2010)]. In addition, we illuminate the physics of squeezed coherent microwave fields. This work is supported by SFB 631, German Excellence Initiative via NIM, EU projects SOLID, CCQED, PROMISCE and SCALEQIT, MEXT Kakenhi ``Quantum Cybernetics,'' JSPS FIRST Program, the NICT Commissioned Research, Basque Government IT472-10, Spanish MINECO FIS2012-36673-C03-02, and UPV/EHU UFI 11/55.

High-energy, ceramic-disk Yb:LuAG laser amplifier.

PubMed

Siebold, M; Loeser, M; Roeser, F; Seltmann, M; Harzendorf, G; Tsybin, I; Linke, S; Banerjee, S; Mason, P D; Phillips, P J; Ertel, K; Collier, J C; Schramm, U

2012-09-24

We report the first short-pulse amplification results to several hundred millijoule energies in ceramic Yb:LuAG. We have demonstrated ns-pulse output from a diode-pumped Yb:LuAG amplifier at a maximum energy of 580 mJ and a peak optical-to-optical efficiency of 28% at 550 mJ. In cavity dumped operation of a nanosecond oscillator we obtained 1 mJ at up to 100 Hz repetition rate. A gain bandwidth of 5.4 nm was achieved at room temperature by measuring the small-signal single-pass gain. Furthermore, we compared our results with Yb:YAG within the same amplifier system.

Kilohertz Cr:forsterite regenerative amplifier.

PubMed

Evans, J M; Petri Evi, V; Alfano, R R; Fu, Q

1998-11-01

We report on a tunable regenerative amplifier that is operational in the near-infrared spectral region from 1230 to 1280 nm based on the vibronic laser material Cr:forsterite. Utilizing the technique of chirped-pulse amplification, we generated pulses as short as 150 fs at 1255 nm at a repetition rate of 1 kHz. Pulse amplification of more than 5 x 10(5) times was observed, with recorded output pulse energies of 34 muJ . Implementation of a second-harmonic generator yielded 110-fs-duration pulses of 7-muJ energy at 625 nm.

Capacities of quantum amplifier channels

NASA Astrophysics Data System (ADS)

Qi, Haoyu; Wilde, Mark M.

2017-01-01

Quantum amplifier channels are at the core of several physical processes. Not only do they model the optical process of spontaneous parametric down-conversion, but the transformation corresponding to an amplifier channel also describes the physics of the dynamical Casimir effect in superconducting circuits, the Unruh effect, and Hawking radiation. Here we study the communication capabilities of quantum amplifier channels. Invoking a recently established minimum output-entropy theorem for single-mode phase-insensitive Gaussian channels, we determine capacities of quantum-limited amplifier channels in three different scenarios. First, we establish the capacities of quantum-limited amplifier channels for one of the most general communication tasks, characterized by the trade-off between classical communication, quantum communication, and entanglement generation or consumption. Second, we establish capacities of quantum-limited amplifier channels for the trade-off between public classical communication, private classical communication, and secret key generation. Third, we determine the capacity region for a broadcast channel induced by the quantum-limited amplifier channel, and we also show that a fully quantum strategy outperforms those achieved by classical coherent-detection strategies. In all three scenarios, we find that the capacities significantly outperform communication rates achieved with a naive time-sharing strategy.

High voltage electrical amplifier having a short rise time

DOEpatents

Christie, David J.; Dallum, Gregory E.

1991-01-01

A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

Optical Amplifier for Space Applications

NASA Technical Reports Server (NTRS)

Fork, Richard L.; Cole, Spencer T.; Gamble, Lisa J.; Diffey, William M.; Keys, Andrew S.

1999-01-01

We describe an optical amplifier designed to amplify a spatially sampled component of an optical wavefront to kilowatt average power. The goal is means for implementing a strategy of spatially segmenting a large aperture wavefront, amplifying the individual segments, maintaining the phase coherence of the segments by active means, and imaging the resultant amplified coherent field. Applications of interest are the transmission of space solar power over multi-megameter distances, as to distant spacecraft, or to remote sites with no preexisting power grid.

NASA developments in solid state power amplifiers

NASA Technical Reports Server (NTRS)

Leonard, Regis F.

1990-01-01

Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

Development and Evaluation of a Tutorial to Improve Students' Understanding of a Lock-in Amplifier

ERIC Educational Resources Information Center

DeVore, Seth; Gauthier, Alexandre; Levy, Jeremy; Singh, Chandralekha

2016-01-01

A lock-in amplifier is a versatile instrument frequently used in physics research. However, many students struggle with the basic operating principles of a lock-in amplifier which can lead to a variety of difficulties. To improve students' understanding, we have been developing and evaluating a research-based tutorial which makes use of a computer…

Development of pre pre-driver amplifier stage for generator of SST-1 ICRH system

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Sinh Makwana, Azad; Srinivas, Y. S. S.; Kulkarni, S. V.; ICRH-RF Group

2010-02-01

The Ion Cyclotron Resonance Heating (ICRH) system for SST1 consists mainly of the cwrf power generator to deliver 1.5MW for 1000sec duration at the frequencies 22.8, 24.3 and 45.6±1MHz, the transmission line and the antenna. This is planned to develop a independent and dedicated cwrf generator that consists of a oscillator, buffer, rf switch, modulator, rf attenuator, directional coupler, three stage solid state low power amplifier and four stage triode & tetrode based high power amplifier with specific performance at 45.6±1MHz including frequencies 22.8 and 24.3±1MHz. The pre pre-driver high power amplifier stage is fabricated about triode 3CX3000A7. The tube has sufficient margin in terms of plate dissipation and grid dissipation that makes it suitable to withstand momentarily load mismatch and to upgrade the source in terms of output power later. This indigenously developed amplifier is integrated inside a radiation resistant rack with all required biasing power supplies, cooling blower, controls, monitors and interlocks for manual or remote control operation. This grounded grid mode amplifier will be operated at plate with 3.8KV/ 800mA in class AB for 1.8KW cwrf output power rating. The input circuit is broadband and the output circuit is tunable with slide variable inductor and a vacuum variable capacitor in the frequency range of 22.8 to 45.6MHz. It is designed for a gain of about 12dB, fabrication completed and undergoing cwrf power testing. This paper presents specifications, design criteria, circuit used, operating parameters, tests conducted and the results obtained.

Prestin-based outer hair cell electromotility in knockin mice does not appear to adjust the operating point of a cilia-based amplifier

PubMed Central

Gao, Jiangang; Wang, Xiang; Wu, Xudong; Aguinaga, Sal; Huynh, Kristin; Jia, Shuping; Matsuda, Keiji; Patel, Manish; Zheng, Jing; Cheatham, MaryAnn; He, David Z.; Dallos, Peter; Zuo, Jian

2007-01-01

The remarkable sensitivity and frequency selectivity of the mammalian cochlea is attributed to a unique amplification process that resides in outer hair cells (OHCs). Although the mammalian-specific somatic motility is considered a substrate of cochlear amplification, it has also been proposed that somatic motility in mammals simply acts as an operating-point adjustment for the ubiquitous stereocilia-based amplifier. To address this issue, we created a mouse model in which a mutation (C1) was introduced into the OHC motor protein prestin, based on previous results in transfected cells. In C1/C1 knockin mice, localization of C1-prestin, as well as the length and number of OHCs, were all normal. In OHCs isolated from C1/C1 mice, nonlinear capacitance and somatic motility were both shifted toward hyperpolarization, so that, compared with WT controls, the amplitude of cycle-by-cycle (alternating, or AC) somatic motility remained the same, but the unidirectional (DC) component reversed polarity near the OHC's presumed in vivo resting membrane potential. No physiological defects in cochlear sensitivity or frequency selectivity were detected in C1/C1 or C1/+ mice. Hence, our results do not support the idea that OHC somatic motility adjusts the operating point of a stereocilia-based amplifier. However, they are consistent with the notion that the AC component of OHC somatic motility plays a dominant role in mammalian cochlear amplification. PMID:17640919

Low-noise two-wired buffer electrodes for bioelectric amplifiers.

PubMed

Degen, Thomas; Torrent, Simon; Jäckel, Heinz

2007-07-01

Active buffer electrodes are known to improve the immunity of bioelectric recordings against power line interferences. A survey of published work reveals that buffer electrodes are almost exclusively designed using operational amplifiers (opamps). In this paper, we discuss the advantage of utilizing a single transistor instead. This allows for a simple electrode, which is small and requires only two wires. In addition, a single transistor adds considerably less noise when compared to an opamp with the same power consumption. We then discuss output resistance and gain as well as their respective effect on the common mode rejection ratio (CMRR). Finally, we demonstrate the use of two-wired buffer electrodes for a bioelectric amplifier.

Noise-figure limit of fiber-optical parametric amplifiers and wavelength converters: experimental investigation

NASA Astrophysics Data System (ADS)

Tang, Renyong; Voss, Paul L.; Lasri, Jacob; Devgan, Preetpaul; Kumar, Prem

2004-10-01

Recent theoretical work predicts that the quantum-limited noise figure of a chi(3)-based fiber-optical parametric amplifier operating as a phase-insensitive in-line amplifier or as a wavelength converter exceeds the standard 3-dB limit at high gain. The degradation of the noise figure is caused by the excess noise added by the unavoidable Raman gain and loss occurring at the signal and the converted wavelengths. We present detailed experimental evidence in support of this theory through measurements of the gain and noise-figure spectra for phase-insensitive parametric amplification and wavelength conversion in a continuous-wave amplifier made from 4.4 km of dispersion-shifted fiber. The theory is also extended to include the effect of distributed linear loss on the noise figure of such a long-length parametric amplifier and wavelength converter.

Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

NASA Astrophysics Data System (ADS)

Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

2017-10-01

Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

NASA Technical Reports Server (NTRS)

Samoska, Lorene; Schmitz, Adele

2009-01-01

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2

Radiation hardening of rare-earth doped fiber amplifiers

NASA Astrophysics Data System (ADS)

Vivona, Marilena; Girard, Sylvain; Marcandella, Claude; Pinsard, Emmanuel; Laurent, Arnaud; Robin, Thierry; Cadier, Benoît; Cannas, Marco; Boukenter, Aziz; Ouerdane, Y.

2017-11-01

We investigated the radiation hardening of optical fiber amplifiers operating in space environments. Through a real-time analysis in active configuration, we evaluated the role of Ce in the improvement of the amplifier performance against ionizing radiations. Ce-codoping is an efficient hardening solution, acting both in the limitation of defects in the host glass matrix of RE-doped optical fibers and in the stabilization of lasing properties of the Er3+-ions. On the one hand, in the near-infrared region, radiation induced attenuation measurements show the absence of radiation induced P-related defect species in host glass matrix of the Ce-codoped active fibers; on the other hand, in the Ce-free fiber, the higher lifetime variation shows stronger local modifications around the Er3+-ions with the absence of Ce.

Ping-pong auto-zero amplifier with glitch reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larson, Mark R

A ping-pong amplifier with reduced glitching is described. The ping-pong amplifier includes a nulling amplifier coupled to a switching network. The switching network is used to auto-zero a ping amplifier within a ping-pong amplifier. The nulling amplifier drives the output of a ping amplifier to a proper output voltage level during auto-zeroing of the ping amplifier. By being at a proper output voltage level, glitches associated with transitioning between a ping amplifier and a pong amplifier are reduced or eliminated.

Integrating amplifiers using cooled JFETs

NASA Technical Reports Server (NTRS)

Low, F. J.

1984-01-01

It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

Ultrahigh-speed phaselocked-loop type clock recovery circuit using a travelling-wave laser diode amplifier as a 50 GHz phase detector

NASA Astrophysics Data System (ADS)

Kawanishi, S.; Takara, H.; Saruwatari, M.; Kitoh, T.

1993-09-01

Successful operation of a phase-locked loop is demonstrated using a traveling-wave laser-diode amplifier as a 50 GHz phase detector. Optical gain modulation in the laser diode amplifier and an all-optical clock multiplication technique using a silica-based guided-wave optical circuit are used to achieve the extremely high-speed operation. Also discussed is the possibility of more than 100 GHz operation.

High power RF solid state power amplifier system

NASA Technical Reports Server (NTRS)

Sims, III, William Herbert (Inventor); Chavers, Donald Gregory (Inventor); Richeson, James J. (Inventor)

2011-01-01

A high power, high frequency, solid state power amplifier system includes a plurality of input multiple port splitters for receiving a high-frequency input and for dividing the input into a plurality of outputs and a plurality of solid state amplifier units. Each amplifier unit includes a plurality of amplifiers, and each amplifier is individually connected to one of the outputs of multiport splitters and produces a corresponding amplified output. A plurality of multiport combiners combine the amplified outputs of the amplifiers of each of the amplifier units to a combined output. Automatic level control protection circuitry protects the amplifiers and maintains a substantial constant amplifier power output.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, K. S.

1985-01-01

This semiannual progress report covers the period from April 1, 1985 to Sept. 30, 1985 under NASA grant NAS1-441 entitled direct solar pumped iodine laser amplifier. During this period the parametric studies of the iodine laser oscillator pumped by a Vortek simulator was carried out before the amplifier studies. The amplifier studies are postponed to the extended period following completion of the parametric studies. In addition, the kinetic modeling of a solar pumped iodine laser amplifier, and the experimental work for a solar pumped dye laser amplifier are in progress. This report contains three parts: (1) the radiation characteristics of solar simulator and the parametric characteristics of photodissociation iodine laser continuously pumped by a Vortek solar simulator; (2) kinetic modeling of a solar pumped iodine laser amplifier; and (3) the study of the dye laser amplifier pumped by a Tamarack solar simulator.

Low-NA single-mode LMA photonic crystal rod fiber amplifier

NASA Astrophysics Data System (ADS)

Alkeskjold, Thomas Tanggaard; Laurila, Marko; Scolari, Lara; Broeng, Jes

2011-02-01

Enabling Single-Mode (SM) operation in Large-Mode-Area (LMA) fiber amplifiers and lasers is critical, since a SM output ensures high beam quality and excellent pointing stability. In this paper, we demonstrate and test a new design approach for achieving ultra-low NA SM rod fibers by using a spatially Distributed Mode Filter (DMF). This approach achieves SM performance in a short and straight rod fiber and allows preform tolerances to be compensated during draw. A low-NA SM rod fiber amplifier having a mode field diameter of ~60μm at 1064nm and a pump absorption of 27dB/m at 976nm is demonstrated.

Laser amplifier and method

DOEpatents

Backus, S.; Kapteyn, H.C.; Murnane, M.M.

1997-07-01

Laser amplifiers and methods for amplifying a laser beam are disclosed. A representative embodiment of the amplifier comprises first and second curved mirrors, a gain medium, a third mirror, and a mask. The gain medium is situated between the first and second curved mirrors at the focal point of each curved mirror. The first curved mirror directs and focuses a laser beam to pass through the gain medium to the second curved mirror which reflects and recollimates the laser beam. The gain medium amplifies and shapes the laser beam as the laser beam passes therethrough. The third mirror reflects the laser beam, reflected from the second curved mirror, so that the laser beam bypasses the gain medium and return to the first curved mirror, thereby completing a cycle of a ring traversed by the laser beam. The mask defines at least one beam-clipping aperture through which the laser beam passes during a cycle. The gain medium is pumped, preferably using a suitable pumping laser. The laser amplifier can be used to increase the energy of continuous-wave or, especially, pulsed laser beams including pulses of femtosecond duration and relatively high pulse rate. 7 figs.

Laser amplifier and method

DOEpatents

Backus, Sterling; Kapteyn, Henry C.; Murnane, Margaret M.

1997-01-01

Laser amplifiers and methods for amplifying a laser beam are disclosed. A representative embodiment of the amplifier comprises first and second curved mirrors, a gain medium, a third mirror, and a mask. The gain medium is situated between the first and second curved mirrors at the focal point of each curved mirror. The first curved mirror directs and focuses a laser beam to pass through the gain medium to the second curved mirror which reflects and recollimates the laser beam. The gain medium amplifies and shapes the laser beam as the laser beam passes therethough. The third mirror reflects the laser beam, reflected from the second curved mirror, so that the laser beam bypasses the gain medium and return to the first curved mirror, thereby completing a cycle of a ring traversed by the laser beam. The mask defines at least one beam-clipping aperture through which the laser beam passes during a cycle. The gain medium is pumped, preferably using a suitable pumping laser. The laser amplifier can be used to increase the energy of continuous-wave or, especially, pulsed laser beams including pulses of femtosecond duration and relatively high pulse rate.

Real Time Calibration Method for Signal Conditioning Amplifiers

NASA Technical Reports Server (NTRS)

Medelius, Pedro J. (Inventor); Mata, Carlos T. (Inventor); Eckhoff, Anthony (Inventor); Perotti, Jose (Inventor); Lucena, Angel (Inventor)

2004-01-01

A signal conditioning amplifier receives an input signal from an input such as a transducer. The signal is amplified and processed through an analog to digital converter and sent to a processor. The processor estimates the input signal provided by the transducer to the amplifier via a multiplexer. The estimated input signal is provided as a calibration voltage to the amplifier immediately following the receipt of the amplified input signal. The calibration voltage is amplified by the amplifier and provided to the processor as an amplified calibration voltage. The amplified calibration voltage is compared to the amplified input signal, and if a significant error exists, the gain and/or offset of the amplifier may be adjusted as necessary.

High-efficiency solid state power amplifier

NASA Technical Reports Server (NTRS)

Wallis, Robert E. (Inventor); Cheng, Sheng (Inventor)

2005-01-01

A high-efficiency solid state power amplifier (SSPA) for specific use in a spacecraft is provided. The SSPA has a mass of less than 850 g and includes two different X-band power amplifier sections, i.e., a lumped power amplifier with a single 11-W output and a distributed power amplifier with eight 2.75-W outputs. These two amplifier sections provide output power that is scalable from 11 to 15 watts without major design changes. Five different hybrid microcircuits, including high-efficiency Heterostructure Field Effect Transistor (HFET) amplifiers and Monolithic Microwave Integrated Circuit (MMIC) phase shifters have been developed for use within the SSPA. A highly efficient packaging approach enables the integration of a large number of hybrid circuits into the SSPA.

A compact 10 kW solid-state RF power amplifier at 352 MHz

NASA Astrophysics Data System (ADS)

Dancila, Dragos; Hoang Duc, Long; Jobs, Magnus; Holmberg, Måns; Hjort, Adam; Rydberg, Anders; Ruber, Roger

2017-07-01

A compact 10 kW RF power amplifier at 352 MHz was developed at FREIA for the European Spallation Source, ESS. The specifications of ESS for the conception of amplifiers are related to its pulsed operation: 3.5 ms pulse length and a duty cycle of 5%. The realized amplifier is composed of eight kilowatt level modules, combined using a planar Gysel 8-way combiner. The combiner has a low insertion loss of only 0.2 dB, measured at 10 kW peak power. Each module is built around a commercially available LDMOS transistor in a singleended architecture. During the final tests, a total output peak power of 10.5 kW was measured.

Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

NASA Astrophysics Data System (ADS)

Cecil, Kanchan; Singh, Jawar

2017-01-01

Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead of Silicon (Si) as a "Source region" material in dopingless (DL) tunnel field-effect transistor (DLTFET). We observed that the Ge source DLTFET delivers much better performance in comparison to Si DLTFET under various analog/RF figure of merits (FOMs), such as transconductance (gm), transconductance generation factor (TGF) (gm /Id), output conductance (gd), output resistance (RO), intrinsic gain (gmRO), intrinsic gate delay (τ) and RF FOMs, like unity gain frequency (fT), gain bandwidth product (GBW) along with various gate capacitances. These parameters were extracted using 2D TCAD device simulations through small signal ac analysis. Higher ION /IOFF ratio (1014) of Ge source DLTFET can reduce the dynamic as well as static power in digital circuits, while higher transconductance generation factor (gm /Id) ∼ 2287 V-1 can lower the bias power of an amplifier. Similarly, enhanced RF FOMs i.e unity gain frequency (fT) and gain bandwidth product (GBW) in Gigahertz range projects the proposed device preference for RF circuits.

Measurement of characteristic parameters of 10 Gb/s bidirectional optical amplifier for XG-PON

NASA Astrophysics Data System (ADS)

Rakkammee, Suchaj; Boriboon, Budsara; Worasucheep, Duang-rudee; Wada, Naoya

2018-03-01

This research experimentally measured the characteristic parameters of 10 Gb/s bidirectional optical amplifier: (1) operating wavelength range, (2) small signal gain, (3) Polarization Dependent Loss (PDL), and (4) power consumption. Bidirectional amplifiers are the key component to extend coverage area as well as increase a number of users in Passive Optical Networks (PON). According to 10-Gigabit-capable PON or XG-PON standard, the downstream and upstream wavelengths are 1577 nm and 1270 nm respectively. Thus, our bidirectional amplifier consists of an Erbium Doped Fiber Amplifier (EDFA) and a Semiconductor Optical Amplifier (SOA) for downstream and upstream wavelength transmissions respectively. The operating wavelengths of EDFA and SOA are measured to be from 1570 nm to 1588 nm and 1263 nm to 1280 nm respectively. To measure gain, the input wavelengths of EDFA and SOA were fixed at 1577 nm and 1271 nm respectively, while their input powers were reduced by a variable optical attenuator. The small signal gain of EDFA is 22.5 dB at 0.15 Ampere pump current, whereas the small signal gain of SOA is 7.06 dB at 0.325 Ampere pump current. To measure PDL, which is a difference in output powers at various State of Polarization (SoP) of input signal, a polarization controller was inserted before amplifier to alter input SoP. The measured PDL of EDFA is insignificant with less than 0.1 dB. In contrast, the measured PDL of SOA is as large as 33 dB, indicating its strong polarization dependence. The total power consumptions were measured to be 1.5675 Watt.

Polarization Maintaining, Very-Large-Mode Area, Er Fiber Amplifier for High Energy Pulses at 1572.3 nm

NASA Technical Reports Server (NTRS)

Nicholoson, J. W.; DeSantolo, A.; Yan, M. F.; Wisk, P.; Mangan, B.; Puc, G.; Yu, A.; Stephen, M.

2016-01-01

We demonstrate the first polarization maintaining, very-large-mode-area Er-doped fiber amplifier with 1000 square micron effective area. The amplifier is core pumped by a Raman fiber laser and is used to generate single frequency one microsecond pulses with pulse energy of 368 microJoules, M2 of 1.1, and polarization extinction greater than 20 dB. The amplifier operates at 1572.3 nm, a wavelength useful for trace atmospheric CO2 detection.

Multiple pass laser amplifier system

DOEpatents

Brueckner, Keith A.; Jorna, Siebe; Moncur, N. Kent

1977-01-01

A laser amplification method for increasing the energy extraction efficiency from laser amplifiers while reducing the energy flux that passes through a flux limited system which includes apparatus for decomposing a linearly polarized light beam into multiple components, passing the components through an amplifier in delayed time sequence and recombining the amplified components into an in phase linearly polarized beam.

High Efficiency End-Pumped Ho:Tm:YLF Disk Amplifier

NASA Technical Reports Server (NTRS)

Yu, Jirong; Singh, Upendra N.; Petros, Mulugeta; Axenson, Theresa J.; Barnes, Norman P.

1999-01-01

Space based coherent lidar for global wind measurement requires an all solid state laser system with high energy, high efficiency and narrow linewidth that operates in the eye safe region. A Q-switched, diode pumped Ho:Tm:YLF 2 micrometer laser with output energy of as much as 125 mJ at 6 Hz with an optical-to-optical efficiency of 3% has been reported. Single frequency operation of the laser was achieved by injection seeding. The design of this laser is being incorporated into NASA's SPARCLE (SPAce Readiness Coherent Lidar Experiment) wind lidar mission. Laser output energy ranging from 500 mJ to 2 J is required for an operational space coherent lidar. We previously developed a high energy Ho:Tm:YLF master oscillator and side pumped power amplifier system and demonstrated a 600-mJ single frequency pulse at a repetition rate of 10 Hz. Although the output energy is high, the optical-to-optical efficiency is only about 2%. Designing a high energy, highly efficient, conductively cooled 2-micrometer laser remains a challenge. In this paper, the preliminary result of an end-pumped amplifier that has a potential to provide a factor 3 of improvement in the system efficiency is reported.

Raman-noise-induced noise-figure limit for chi (3) parametric amplifiers

NASA Astrophysics Data System (ADS)

Voss, Paul L.; Kumar, Prem

2004-03-01

The nonzero response time of the Kerr [chi (3)] nonlinearity determines the quantum-limited noise figure of c3 parametric amplifiers. This nonzero response time of the nonlinearity requires coupling of the parametric amplification process to a molecular-vibration phonon bath, causing the addition of excess noise through Raman gain or loss at temperatures above 0 K. The effect of this excess noise on the noise figure can be surprisingly significant. We derive analytical expressions for this quantum-limited noise figure for phase-insensitive operation of a chi (3) amplifier and show good agreement with published noise-figure measurements.

Design and analysis of optically pumped submillimeter waveguide maser amplifiers and oscillators

NASA Technical Reports Server (NTRS)

Galantowicz, T. A.

1975-01-01

The design and experimental measurements are described of an optically pumped far-infrared (FIR) waveguide maser; preliminary measurements on a FIR waveguide amplifier are presented. The FIR maser was found to operate satisfactorily in a chopped CW mode using either methanol (CH3OH) or acetonitrile (CH3CN) as the active molecule. Two other gases, difluoroethane and difluoroethylene, produced an unstable output with high threshold and low output power when operated in the chopped CW mode. Experimental measurements include FIR output versus cavity length, output beam pattern, output power versus pressure, and input power. The FIR output was the input to an amplifier which was constructed similar to the oscillator. An increase of 10% in output power was noted on the 118.8 microns line of methanol.

Ku and K band GaN High Power Amplifier MMICs

DTIC Science & Technology

2017-03-20

end Ku-band HPA operates from 13 to 14.5 GHz and delivers 48 Watts of output power with 43% PAE. A high-end Ku-band HPA operates from 15.5 to 18 GHz and...delivers 25 Watts of output power with 45% PAE. A K-band HPA operates from 19.5 to 22 GHz and delivers 18 Watts of output power with 29% PAE...15.5 and 18 GHz. The circuit is a three-stage reactively-matched amplifier. A photograph of a fabricated high-end Ku-band GaN HPA is shown as an

ICESat-2 laser Nd:YVO4 amplifier

NASA Astrophysics Data System (ADS)

Sawruk, Nicholas W.; Burns, Patrick M.; Edwards, Ryan E.; Litvinovitch, Viatcheslav; Martin, Nigel; Witt, Greg; Fakhoury, Elias; Iskander, John; Pronko, Mark S.; Troupaki, Elisavet; Bay, Michael M.; He, Charles C.; Wang, Liqin L.; Cavanaugh, John F.; Farrokh, Babak; Salem, Jonathan A.; Baker, Eric

2018-02-01

We report on the cause and corrective actions of three amplifier crystal fractures in the space-qualified laser systems used in NASA Goddard Space Flight Center's (GSFC) Ice, Cloud, and Land Elevation Satellite-2 (ICESat-2). The ICESat-2 lasers each contain three end-pumped Nd:YVOO4 amplifier stages. The crystals are clamped between two gold plated copper heat spreaders with an indium foil thermal interface material, and the crystal fractures occurred after multiple years of storage and over a year of operational run-time. The primary contributors are high compressive loading of the NdYVO4 crystals at the beginning of life, a time dependent crystal stress caused by an intermetallic reaction of the gold plating and indium, and slow crack growth resulting in a reduction in crystal strength over time. An updated crystal mounting scheme was designed, analyzed, fabricated and tested. Thee fracture slab failure analysis, finite-element modeling and corrective actions are presented.

LED-pumped Alexandrite laser oscillator and amplifier

NASA Astrophysics Data System (ADS)

Pichon, Pierre; Blanchot, Jean-Philippe; Balembois, François; Druon, Frédéric; Georges, Patrick

2018-02-01

In this paper, we report the first LED-pumped transition-metal-doped laser oscillator and amplifier based on an alexandrite crystal (Cr3+:BeAl2O4). A Ce:YAG luminescent concentrator illuminated by blue LEDs is used to reach higher pump powers than with LEDs alone. The luminescent 200-mm-long-composit luminescent concentrator involving 2240 LEDs can delivers up to 268 mJ for a peak irradiance of 8.5 kW/cm2. In oscillator configuration, an LED-pumped alexandrite laser delivering an energy of 2.9 mJ at 748 nm in free running operation is demonstrated. In the cavity, we measured a double pass small signal gain of 1.28, in good agreement with numerical simulations. As amplifier, the system demonstrated to boost a CW Ti:sapphire laser by a factor of 4 at 750 nm in 8 passes with a large tuning range from 710 nm to 800 nm.

Auto-locking waveguide amplifier system for lidar and magnetometric applications

NASA Astrophysics Data System (ADS)

Pouliot, A.; Beica, H. C.; Carew, A.; Vorozcovs, A.; Carlse, G.; Kumarakrishnan, A.

2018-02-01

We describe a compact waveguide amplifier system that is suitable for optically pumping rubidium magnetometers. The system consists of an auto-locking vacuum-sealed external cavity diode laser, a semiconductor tapered amplifier and a pulsing unit based on an acousto-optic modulator. The diode laser utilises optical feedback from an interference filter to narrow the linewidth of an inexpensive laser diode to 500 kHz. This output is scannable over an 8 GHz range (at 780 nm) and can be locked without human intervention to any spectral marker in an expandable library of reference spectra, using the autolocking controller. The tapered amplifier amplifies the output from 50 mW up to 2 W with negligible distortions in the spectral quality. The system can operate at visible and near infrared wavelengths with MHz repetition rates. We demonstrate optical pumping of rubidium vapour with this system for magnetometric applications. The magnetometer detects the differential absorption of two orthogonally polarized components of a linearly polarized probe laser following optical pumping by a circularly polarized pump laser. The differential absorption signal is studied for a range of pulse lengths, pulse amplitudes and DC magnetic fields. Our results suggest that this laser system is suitable for optically pumping spin-exchange free magnetometers.

Gigahertz flexible graphene transistors for microwave integrated circuits.

PubMed

Yeh, Chao-Hui; Lain, Yi-Wei; Chiu, Yu-Chiao; Liao, Chen-Hung; Moyano, David Ricardo; Hsu, Shawn S H; Chiu, Po-Wen

2014-08-26

Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.

Fourier plane image amplifier

DOEpatents

Hackel, Lloyd A.; Hermann, Mark R.; Dane, C. Brent; Tiszauer, Detlev H.

1995-01-01

A solid state laser is frequency tripled to 0.3 .mu.m. A small portion of the laser is split off and generates a Stokes seed in a low power oscillator. The low power output passes through a mask with the appropriate hole pattern. Meanwhile, the bulk of the laser output is focused into a larger stimulated Brillouin scattering (SBS) amplifier. The low power beam is directed through the same cell in the opposite direction. The majority of the amplification takes place at the focus which is the fourier transform plane of the mask image. The small holes occupy large area at the focus and thus are preferentially amplified. The amplified output is now imaged onto the multichip module where the holes are drilled. Because of the fourier plane amplifier, only .about.1/10th the power of a competitive system is needed. This concept allows less expensive masks to be used in the process and requires much less laser power.

Fourier plane image amplifier

DOEpatents

Hackel, L.A.; Hermann, M.R.; Dane, C.B.; Tiszauer, D.H.

1995-12-12

A solid state laser is frequency tripled to 0.3 {micro}m. A small portion of the laser is split off and generates a Stokes seed in a low power oscillator. The low power output passes through a mask with the appropriate hole pattern. Meanwhile, the bulk of the laser output is focused into a larger stimulated Brillouin scattering (SBS) amplifier. The low power beam is directed through the same cell in the opposite direction. The majority of the amplification takes place at the focus which is the fourier transform plane of the mask image. The small holes occupy large area at the focus and thus are preferentially amplified. The amplified output is now imaged onto the multichip module where the holes are drilled. Because of the fourier plane amplifier, only about 1/10th the power of a competitive system is needed. This concept allows less expensive masks to be used in the process and requires much less laser power. 1 fig.

Reflex ring laser amplifier system

DOEpatents

Summers, M.A.

1983-08-31

The invention is a method and apparatus for providing a reflex ring laser system for amplifying an input laser pulse. The invention is particularly useful in laser fusion experiments where efficient production of high-energy and high power laser pulses is required. The invention comprises a large aperture laser amplifier in an unstable ring resonator which includes a combination spatial filter and beam expander having a magnification greater than unity. An input pulse is injected into the resonator, e.g., through an aperture in an input mirror. The injected pulse passes through the amplifier and spatial filter/expander components on each pass around the ring. The unstable resonator is designed to permit only a predetermined number of passes before the amplified pulse exits the resonator. On the first pass through the amplifier, the beam fills only a small central region of the gain medium. On each successive pass, the beam has been expanded to fill the next concentric non-overlapping region of the gain medium.

Signal-Conditioning Amplifier Recorders

NASA Technical Reports Server (NTRS)

Medelius, Pedro J.; Taylor, John

2003-01-01

Signal-conditioning amplifier recorders (SCAmpRs) have been proposed as a means of simplifying and upgrading the Kennedy Space Center (KSC) Ground Measurement System (GMS), which is a versatile data-acquisition system that gathers and records a variety of measurement data before and during the launch of a space shuttle. In the present version of the GMS system, signal conditioning amplifiers digitize and transmit data to a VME chassis that multiplexes up to 416 channels. The data is transmitted via a high-speed data bus to a second VME chassis where it is available for snapshots. The data is passed from the second VME chassis to a high-speed data recorder. This process is duplicated for installations at two launch pads and the Vehicle Assembly Building (VAB). Since any failure of equipment in the data path results in loss of data, much of the system is redundant. The architecture of the existing GMS limits expansion or any modification to the system to meet changing requirements because of the cost and time required. A SCAmpR-based system is much more flexible. The basis of the simplification, flexibility, and reliability is the shifting of the recording function to the individual amplifier channels. Each SCAmpR is a self-contained single channel data acquisition system, which in its current implementation, has a data storage capacity of up to 30 minutes when operating at the fastest data sampling rates. The SCAmpR channels are self-configuring and self-calibrating. Multiple SCAmpR channels are ganged on printed circuit boards and mounted in a chassis that provides power, a network hub, and Inter-Range Instrument Group (IRIG) time signals. The SCAmpR channels share nothing except physical mounting on a circuit board. All circuitry is electrically separate for each channel. All that is necessary to complete the data acquisition system is a single master computer tied to the SCAmpR channels by standard network equipment. The size of the data acquisition system

Enhanced performance CCD output amplifier

DOEpatents

Dunham, Mark E.; Morley, David W.

1996-01-01

A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

21 CFR 882.1835 - Physiological signal amplifier.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Physiological signal amplifier. 882.1835 Section... signal amplifier. (a) Identification. A physiological signal amplifier is a general purpose device used to electrically amplify signals derived from various physiological sources (e.g., the...

21 CFR 882.1835 - Physiological signal amplifier.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Physiological signal amplifier. 882.1835 Section... signal amplifier. (a) Identification. A physiological signal amplifier is a general purpose device used to electrically amplify signals derived from various physiological sources (e.g., the...

Vacuum testing of a miniaturised switch mode amplifier powering an electrothermal plasma micro-thruster

NASA Astrophysics Data System (ADS)

Charles, Christine; Liang, Wei; Raymond, Luke; Rivas-Davila, Juan; Boswell, Roderick W.

2017-08-01

A structurally supportive miniaturised low-weight (≤150 g) radiofrequency switch mode amplifier developed to power the small diameter Pocket Rocket electrothermal plasma micro-thruster called MiniPR is tested in vacuum conditions representative of space to demonstrate its suitability for use on nano-satellites such as `CubeSats'. Argon plasma characterisation is carried out by measuring the optical emission signal seen through the plenum window versus frequency (12.8-13.8 MHz) and the plenum cavity pressure increase (indicative of thrust generation from volumetric gas heating in the plasma cavity) versus power (1-15 Watts) with the amplifier operating at atmospheric pressure and a constant flow rate of 20 sccm. Vacuum testing is subsequently performed by measuring the operational frequency range of the amplifier as a function of gas flow rate. The switch mode amplifier design is finely tuned to the input impedance of the thruster ˜16 pF) to provide a power efficiency of 88 % at the resonant frequency and a direct feed to a low-loss (˜ 10 %) impedance matching network. This system provides successful plasma coupling at 1.54 Watts for all investigated flow rates (10-130 sccm) for cryogenic pumping speeds of the order of 6000 l.s^{-1} and a vacuum pressure of the order of ˜ 2x10^{-5} Torr during operation. Interestingly, the frequency bandwidth for which a plasma can be coupled increases from 0.04 to 0.4 MHz when the gas flow rate is increased, probably as a result of changes in the plasma impedance.

Simulation of all-optical logic NOR gate based on two-photon absorption with semiconductor optical amplifier-assisted Mach-Zehnder interferometer with the effect of amplified spontaneous emission

NASA Astrophysics Data System (ADS)

Kotb, Amer

2015-05-01

The performance of an all-optical NOR gate is numerically simulated and investigated. The NOR Boolean function is realized by using a semiconductor optical amplifier (SOA) incorporated in Mach-Zehnder interferometer (MZI) arms and exploiting the nonlinear effect of two-photon absorption (TPA). If the input pulse intensities is adjusting to be high enough, the TPA-induced phase change can be larger than the regular gain-induced phase change and hence support ultrafast operation in the dual rail switching mode. The numerical study is carried out by taking into account the effect of the amplified spontaneous emission (ASE). The dependence of the output quality factor ( Q-factor) on critical data signals and SOAs parameters is examined and assessed. The obtained results confirm that the NOR gate implemented with the proposed scheme is capable of operating at a data rate of 250 Gb/s with logical correctness and high output Q-factor.

Post pulse shutter for laser amplifier

DOEpatents

Bradley, Laird P. [Livermore, CA; Carder, Bruce M. [Antioch, CA; Gagnon, William L. [Berkeley, CA

1981-03-17

Apparatus and method for quickly closing off the return path for an amplified laser pulse at the output of an amplifier so as to prevent damage to amplifiers and other optical components appearing earlier in the chain by the return of an amplified pulse. The apparatus consists of a fast retropulse or post pulse shutter to suppress target reflection and/or beam return. This is accomplished by either quickly placing a solid across the light transmitting aperture of a component in the chain, such as a spatial filter pinhole, or generating and directing a plasma with sufficiently high density across the aperture, so as to, in effect, close the aperture to the returning amplified energy pulse.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, K. S.

1986-01-01

During this period the parametric studies of the iodine laser oscillator pumped by a Vortek simulator were carried out before amplifier studies. The amplifier studies are postponed to the extended period after completing the parametric studies. In addition, the kinetic modeling of a solar-pumped iodine laser amplifier, and the experimental work for a solar pumped dye laser amplifier are in progress. This report contains three parts: (1) a 10 W CW iodine laser pumped by a Vortek solar simulator; (2) kinetic modeling to predict the time to lasing threshold, lasing time, and energy output of solar-pumped iodine laser; and (3) the study of the dye laser amplifier pumped by a Tamarack solar simulator.

Stability analysis of a two-stage tapered gyrotron traveling-wave tube amplifier with distributed losses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hung, C. L.; Lian, Y. H.; Cheng, N. H.

2012-11-15

The two-stage tapered gyrotron traveling-wave tube (gyro-TWT) amplifier has achieved wide bandwidth in the millimeter wave range. However, possible oscillations in each stage limit this amplifier's operating beam current and thus its output power. To further enhance the amplifier's stability, distributed losses are applied to the interaction circuit of the two-stage tapered gyro-TWT. A self-consistent particle-tracing code is used for analyzing the beam-wave interactions. The stability analysis includes the effects of the wall losses and the length of each stage on the possible oscillations. Simulation results reveal that the distributed-loss method effectively stabilizes all the oscillations in the two stages.more » Under stable operating conditions, the device is predicted to produce a peak power of 60 kW with an efficiency of 29% and a saturated gain of 52 dB in the Ka-band. The 3-dB bandwidth is 5.7 GHz, which is approximately 16% of the center frequency.« less

SQUID amplifiers for axion search experiments

NASA Astrophysics Data System (ADS)

Matlashov, Andrei; Schmelz, Matthias; Zakosarenko, Vyacheslav; Stolz, Ronny; Semertzidis, Yannis K.

2018-04-01

In the experiments for dark-matter QCD-axion searches, very weak microwave signals from a low-temperature High-Q resonant cavity should be detected using the highest sensitivity. The best commercial low-noise cryogenic semiconductor amplifiers based on high electron mobility transistors have a lowest noise temperature above 1.0 K, even if they are cooled well below 1 K. Superconducting quantum interference devices can work as microwave amplifiers with temperature noise close to the standard quantum limit. Previous SQUID-based RF amplifiers designed for axion search experiments have a microstrip resonant input coil and are thus called micro-strip SQUID amplifiers or MSAs. Due to the resonant input coupling they usually have narrow bandwidth. In this paper we report on a SQUID-based wideband microwave amplifier fabricated using sub-micron size Josephson junctions with very low capacitance. A single amplifier can be used in a frequency range of approximately 1-5 GHz.

SiGe/Si Monolithically Integrated Amplifier Circuits

NASA Technical Reports Server (NTRS)

Katehi, Linda P. B.; Bhattacharya, Pallab

1998-01-01

With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

IC Ku-band Impatt Amplifier. [solid state spacecraft transmitter

NASA Technical Reports Server (NTRS)

Sokolov, V.; Namordi, M. R.; Doerbeck, F. H.; Wisseman, W. R.

1979-01-01

High efficiency GaAs low-high-low IMPATTs were investigated. Theoretical analyses were employed to establish a design window for the material parameters to maximize microwave performance. Single mesa devices yielded typically 2 to 3 W with 16 to 23% efficiency in waveguide oscillator test circuits. IMPATTs with high reliability Pt/TiW/Pt/Au metallizations were subjected to temperature stress, non-rf bias-temperature stress, and rf bias-temperature stress. Assuming that temperature is the driving force behind the dominant failure mechanism, a mean-time-to-failure considerably greater than 500,000 hours is indicated by the stress tests. A 15 GHz, 4W, 56 dB gain microstrip amplifier was realized using GaAs FETs and IMPATTs. Power combining using a 3 db Lange coupler is employed in the power output stage having an intrinsic power-added efficiency of 15.7%. Overall dc-to-rf efficiency of the amplifier is 10.8%. The amplifier has greater than a 250 MHz, 1 db bandwidth; operates over the 0 deg to 50 C (base plate) temperature range with less than 0.5 db change in the power output; weighs 444 grams; and has a volume of 220 cu cm.

Low-Noise MMIC Amplifiers for 120 to 180 GHz

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Peralta, Alejandro; Bayuk, Brian; Grundbacher, Ron; Oliver, Patricia; Cavus, Abdullah; Liu, Po-Hsin

2009-01-01

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

Post pulse shutter for laser amplifier

DOEpatents

Bradley, L.P.; Carder, B.M.; Gagnon, W.L.

1981-03-17

Disclosed are an apparatus and method for quickly closing off the return path for an amplified laser pulse at the output of an amplifier so as to prevent damage to amplifiers and other optical components appearing earlier in the chain by the return of an amplified pulse. The apparatus consists of a fast retropulse or post pulse shutter to suppress target reflection and/or beam return. This is accomplished by either quickly placing a solid across the light transmitting aperture of a component in the chain, such as a spatial filter pinhole, or generating and directing a plasma with sufficiently high density across the aperture, so as to, in effect, close the aperture to the returning amplified energy pulse. 13 figs.

High temperature charge amplifier for geothermal applications

DOEpatents

Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

2015-12-08

An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

Excitation of parasitic waves near cutoff in forward-wave amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nusinovich, Gregory S.; Sinitsyn, Oleksandr V.; Antonsen, Thomas M. Jr.

2010-10-15

In this paper, excitation of parasitic waves near cutoff in forward-wave amplifiers is studied in a rather general form. This problem is important for developing high-power sources of coherent, phase controlled short-wavelength electromagnetic radiation because just the waves which can be excited near cutoff have low group velocities. Since the wave coupling to an electron beam is inversely proportional to the group velocity, these waves are the most dangerous parasitic waves preventing stable amplification of desired signal waves. Two effects are analyzed in the paper. The first one is the effect of signal wave parameters on the self-excitation conditions ofmore » such parasitic waves. The second effect is the role of the beam geometry on excitation of these parasitic waves in forward-wave amplifiers with spatially extended interaction space, such as sheet-beam devices. It is shown that a large-amplitude signal wave can greatly influence the self-excitation conditions of the parasitic waves which define stability of operation. Therefore the effect described is important for accurate designing of high-power amplifiers of electromagnetic waves.« less

High Efficiency push-pull class E amplifiers for fusion rocket engines

NASA Astrophysics Data System (ADS)

Gaitan, Gabriel; Ham, Eric; Cohen, S. A.; Swanson, Charles; Chen, Minjie; Brunkhorst, Christopher

2017-10-01

In a Field Reversed Configuration fusion reactor, ions in the plasma are heated by an antenna operating at RF frequencies. This paper presents how push-pull class E amplifiers can be used to efficiently drive this antenna in the MHz range, from 0.5MHz to 4 MHz, while maintaining low harmonic content in the output signal. We offer four different configurations that present a trade-off between efficiency and low harmonic content. The paper presents theoretical values and breadboard results from these configurations, which operate at a power of around 100W. For a practical design, multiple amplifiers would be linked in parallel and would power the RF antenna at around 1MW. These designs provide multiple different options for reactor systems that could be used in a variety of applications, from power plants on the ground to rocket engines in space. This work was supported, in part, by DOE Contract Number DE-AC02-09CH11466 and Princeton Environmental Institute.

47 CFR 97.315 - Certification of external RF power amplifiers.

Code of Federal Regulations, 2010 CFR

2010-10-01

... database as certificated for use in the amateur service may be marketed for use in the amateur service. [71... imported for use at an amateur radio station must be certificated for use in the amateur service in...) The amplifier is constructed or modified by an amateur radio operator for use at an amateur station...

Multistaged stokes injected Raman capillary waveguide amplifier

DOEpatents

Kurnit, Norman A.

1980-01-01

A multistaged Stokes injected Raman capillary waveguide amplifier for providing a high gain Stokes output signal. The amplifier uses a plurality of optically coupled capillary waveguide amplifiers and one or more regenerative amplifiers to increase Stokes gain to a level sufficient for power amplification. Power amplification is provided by a multifocused Raman gain cell or a large diameter capillary waveguide. An external source of CO.sub.2 laser radiation can be injected into each of the capillary waveguide amplifier stages to increase Raman gain. Devices for injecting external sources of CO.sub.2 radiation include: dichroic mirrors, prisms, gratings and Ge Brewster plates. Alternatively, the CO.sub.2 input radiation to the first stage can be coupled and amplified between successive stages.

Solid state, S-band, power amplifier

NASA Technical Reports Server (NTRS)

Digrindakis, M.

1973-01-01

The final design and specifications for a solid state, S-band, power amplifier is reported. Modifications from a previously proposed design were incorporated to improve efficiency and meet input overdrive and noise floor requirements. Reports on the system design, driver amplifier, power amplifier, and voltage and current limiter are included along with a discussion of the testing program.

DRIFT COMPENSATED DIRECT COUPLED AMPLIFIER

DOEpatents

Windsor, A.A.

1959-05-01

An improved direct-coupled amplifier having zerolevel drift correction is described. The need for an auxiliary corrective-potential amplifier is eliminated thereby giving protection against overload saturation of the zero- level drift correcting circuit. (T.R.H.)

High Performance Power Amplifiers Utilizing Novel Balun Design Techniques

NASA Astrophysics Data System (ADS)

Stameroff, Alexander Nicholas

In this PhD. research, a new power amplifier architecture is introduced. This work develops the push-pull architecture into a multifunctional matching network and combiner to create a high power, high efficiency, linear power amplifier (PA) that operates over a wide bandwidth. The traditional push-pull architecture uses an input balun to split a single ended signal into a differential signal, amplify it, and recombine it. This new technique realizes this architecture as a planar, hybrid, PA in X band. The first contribution of this work is the development of planar Marchand baluns that operate over a wide bandwidth. An analysis technique is developed and broadside coupled, Marchand baluns in an inhomogeneous medium are employed. These baluns operate over a bandwidth from 5 to 26 GHz with amplitude and phase imbalances less than 0.5 dB and 5 °, respectively. The even and odd mode behavior of the Marchand balun is utilized to provide harmonic matching for the PA. The balun inherently presents an open circuit to common mode signals at its center frequency. This is utilized to match the second harmonic to an open circuit condition. A band-stop filter is used as a harmonic trap to match the third harmonic to a short circuit. This achieves inverse class F matching for high efficiency operation. This network simultaneously acts as a combiner and matching network for high power and efficiency. A prototype PA was fabricated to prove this concept and achieves a saturated output power, Psat, greater than 33 dBm and a power added efficiency, PAE, greater than 62% over the bandwidth from 9.7 to 10.3 GHz. This technique was refined to operate over a wide bandwidth. The harmonic trap was removed and the out-of-band behavior of the balun was used to provide the short circuit matching at the third harmonic. A prototype PA was fabricated that achieved a 1 dB compressed power, P1dB, and PAE greater than 40 dBm and 55% respectively over the band from 8 to 12 GHz. Finally, the

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

NASA Technical Reports Server (NTRS)

Cornwell, Donald Mitchell, Jr.

1992-01-01

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

1.5-μm high-average power laser amplifier using a Er,Yb:glass planar waveguide for coherent Doppler lidar

NASA Astrophysics Data System (ADS)

Sakimura, Takeshi; Watanabe, Yojiro; Ando, Toshiyuki; Kameyama, Shumpei; Asaka, Kimio; Tanaka, Hisamichi; Yanagisawa, Takayuki; Hirano, Yoshihito; Inokuchi, Hamaki

2012-11-01

We have developed a 1.5-μm eye-safe wavelength high average power laser amplifier using an Er,Yb:glass planar waveguide for coherent Doppler LIDAR. Large cooling surface of the planar waveguide enabled high average power pumping for Er,Yb:glass which has low thermal fracture limit. Nonlinear effects are suppressed by the large beam size which is designed by the waveguide thickness and the beam width of the planar direction. Multi-bounce optical path configuration and high-intensity pumping provide high-gain and high-efficient operation using three-level laser material. With pulsed operation, the maximum pulse energy of 1.9 mJ was achieved at the repetition rate of 4 kHz. Output average power of the amplified signal was 7.6W with the amplified gain of more than 20dB. This amplifier is suitable for coherent Doppler LIDAR to enhance the measurable range.

A high speed and high gain CMOS receiver chip for a pulsed time-of-flight laser rangefinder

NASA Astrophysics Data System (ADS)

Yu, Jin-jin; Deng, Ruo-han; Yuan, Hong-hui; Chen, Yong-ping

2011-06-01

An integrated receiver channel for a pulsed time-of-flight (TOF) laser rangefinder has been designed. Pulsed TOF laser range finding devices using a laser diode transmitter can achieve millimeter-level distance measurement accuracy in a measurement range of several tens of meters to non-cooperative targets. The amplifier exploits the regulated cascade (RGC) configuration as the input-stage, thus achieving as large effective input trans-conductance as that of Si Bipolar or GaAs MESFET. The RGC input configuration isolates the input parasitic capacitance including photodiode capacitance from the bandwidth determination better than common-gate TIA. To enlarge the bandwidth, inductive peaking technology has been adopted. An active inductor (MOS-L) is used instead of spiral inductor in CMOS process. An R-2R resistor ladder is inserting between per-amplifier and post-amplifier as the variable attenuator for digital gain control purpose. The gain-bandwidth of a basic differential pair with resistive load is not large enough for broad band operation. A circuit solution to improve both gain and bandwidth of an amplifying stage is proposed. Traditional and modified Cherry-Hooper amplifiers are discussed and the cascading of several stages to constitute the post-amplifier is designed. The fully integrated one-chip solution is designed with Cadence IC design platform. The simulation result shows the bandwidth of the trans-impedance amplifier is 215MHz with the presence of a 2pF input capacitor and 5pF load capacitor. And the maximum trans-impedance gain is 136dB. The walk error is less than 1ns in 1:1000 dynamic range. The responsive time is less than 2.2ns.

Class E/F switching power amplifiers

NASA Technical Reports Server (NTRS)

Hajimiri, Seyed-Ali (Inventor); Aoki, Ichiro (Inventor); Rutledge, David B. (Inventor); Kee, Scott David (Inventor)

2004-01-01

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Optically pre-amplified lidar-radar

NASA Astrophysics Data System (ADS)

Morvan, Loic; Dolfi, Daniel; Huignard, Jean-Pierre

2001-09-01

We present the concept of an optically pre-amplified intensity modulated lidar, where the modulation frequency is in the microwave domain (1-10 GHz). Such a system permits to combine directivity of laser beams with mature radar processing. As an intensity modulated or dual-frequency laser beam is directed on a target, the backscattered intensity is collected by an optical system, pass through an optical preamplifier, and is detected on a high speed photodiode in a direct detection scheme. A radar type processing permits then to extract range, speed and identification information. The association of spatially multimode amplifier and direct detection allows low sensitivity to atmospheric turbulence and large field of view. We demonstrated theoretically that optical pre-amplification can greatly enhance sensitivity, even in spatially multimode amplifiers, such as free-space amplifier or multimode doped fiber. Computed range estimates based on this concept are presented. Laboratory demonstrations using 1 to 3 GHz modulated laser sources and >20 dB gain in multimode amplifiers are detailed. Preliminary experimental results on range and speed measurements and possible use for large amplitude vibrometry will be presented.

A grid amplifier

NASA Technical Reports Server (NTRS)

Kim, Moonil; Weikle, Robert M., II; Hacker, Jonathan B.; Delisio, Michael P.; Rutledge, David B.; Rosenberg, James J.; Smith, R. P.

1991-01-01

A 50-MESFET grid amplifier is reported that has a gain of 11 dB at 3.3 GHz. The grid isolates the input from the output by using vertical polarization for the input beam and horizontal polarization for the transmitted output beam. The grid unit cell is a two-MESFET differential amplifier. A simple calibration procedure allows the gain to be calculated from a relative power measurement. This grid is a hybrid circuit, but the structure is suitable for fabrication as a monolithic wafer-scale integrated circuit, particularly at millimeter wavelengths.

A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen

NASA Astrophysics Data System (ADS)

Lee, I.-K.; Jeun, M.; Jang, H.-J.; Cho, W.-J.; Lee, K. H.

2015-10-01

Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor based on a self-amplified transistor under dual gate operation (immuno-DG ISFET) for the detection of hepatitis B surface antigen. To address the challenges in current ISFET-based immunosensors, we have enhanced the sensitivity of an immunosensor by precisely tailoring the nanostructure of the transistor. In the pH sensing test, the immuno-DG ISFET showed superior sensitivity (2085.53 mV per pH) to both standard ISFET under single gate operation (58.88 mV per pH) and DG ISFET with a non-tailored transistor (381.14 mV per pH). Moreover, concerning the detection of hepatitis B surface antigens (HBsAg) using the immuno-DG ISFET, we have successfully detected trace amounts of HBsAg (22.5 fg mL-1) in a non-diluted 1× PBS medium with a high sensitivity of 690 mV. Our results demonstrate that the proposed immuno-DG ISFET can be a biosensor platform for practical use in the diagnosis of various diseases.Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor

Microsecond gain-switched master oscillator power amplifier (1958 nm) with high pulse energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke Yin; Weiqiang Yang; Bin Zhang

2014-02-28

An all-fibre master oscillator power amplifier (MOPA) emitting high-energy pulses at 1958 nm is presented. The seed laser is a microsecond gain-switched thulium-doped fibre laser (TDFL) pumped with a commercial 1550-nm pulsed fibre laser. The TDFL operates at a repetition rate f in the range of 10 to 100 kHz. The two-stage thulium-doped fibre amplifier is built to scale the energy of the pulses generated by the seed laser. The maximum output pulse energy higher than 0.5 mJ at 10 kHz is achieved which is comparable with the theoretical maximum extractable pulse energy. The slope efficiency of the second stagemore » amplifier with respect to the pump power is 30.4% at f = 10 kHz. The wavelength of the output pulse laser is centred near 1958 nm at a spectral width of 0.25 nm after amplification. Neither nonlinear effects nor significant amplified spontaneous emission (ASE) is observed in the amplification experiments. (lasers)« less

High power resonant pumping of Tm-doped fiber amplifiers in core- and cladding-pumped configurations.

PubMed

Creeden, Daniel; Johnson, Benjamin R; Rines, Glen A; Setzler, Scott D

2014-11-17

We have demonstrated ultra-high efficiency amplification in Tm-doped fiber with both core- and cladding-pumped configurations using a resonant tandem-pumping approach. These Tm-doped fiber amplifiers are pumped in-band with a 1908 nm Tm-doped fiber laser and operate at 1993 nm with >90% slope efficiency. In a core-pumped configuration, we have achieved 92.1% slope efficiency and 88.4% optical efficiency at 41 W output power. In a cladding-pumped configuration, we have achieved 123.1 W of output power with 90.4% optical efficiency and a 91.6% slope efficiency. We believe these are the highest optical efficiencies achieved in a Tm-doped fiber amplifier operating in the 2-micron spectral region.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, Kwang S.; Hwang, In Heon; Stock, Larry V.

1989-01-01

This semiannual progress report covers the period from September 1, 1988 to February 28, 1989 under NASA grant NAG-1-441 entitled, Direct Solar-Pumped Iodine Laser Amplifier. During this period, the research effort was concentrated on the solar pumped master oscillator power amplifier (MOPA) system using n-C3F7I. In the experimental work, the amplification measurement was conducted to identify the optimum conditions for amplification of the center's Vortek solar simulator pumped iodine laser amplifier. A modeling effort was also pursued to explain the experimental results in the theoretical work. The amplification measurement of the solar simulator pumped iodine laser amplifier is the first amplification experiment on the continuously pumped amplifier. The small signal amplification of 5 was achieved for the triple pass geometry of the 15 cm long solar simulator pumped amplifier at the n-C3F7I pressure of 20 torr, at the flow velocity of 6 m/sec and at the pumping intensity of 1500 solar constants. The XeCl laser pumped iodine laser oscillator, which was developed in the previous research, was employed as the master oscillator for the amplification measurement. In the theoretical work, the rate equations of the amplifier was established and the small signal amplification was calculated for the solar simulator pumped iodine laser amplifier. The amplification calculated from the kinetic equations with the previously measured rate coefficients reveals very large disagreement with experimental measurement. Moreover, the optimum condition predicted by the kinetic equation is quite discrepant with that measured by experiment. This fact indicates the necessity of study in the measurement of rate coefficients of the continuously pumped iodine laser system.

Dual-range linearized transimpedance amplifier system

DOEpatents

Wessendorf, Kurt O.

2010-11-02

A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).

Is there a role for amplifiers in sexual selection?

PubMed

Gualla, Filippo; Cermelli, Paolo; Castellano, Sergio

2008-05-21

The amplifier hypothesis states that selection could favour the evolution of traits in signallers that improve the ability of receivers to extract honest information from other signals or cues. We provide a formal definition of amplifiers based on the receiver's mechanisms of signal perception and we present a game-theoretical model in which males advertise their quality and females use sequential-sampling tactics to choose among prospective mates. The main effect of an amplifier on the female mating strategy is to increase her mating threshold, making the female more selective as the effectiveness of the amplifier increases. The effects of the amplifier on male advertising strategy depends both on the context and on the types of the amplifier involved. We consider two different contexts for the evolution of amplifiers (when the effect of amplifiers is on signals and when it is on cues) and two types of amplifiers (the 'neutral amplifier', when it improves quality assessment without altering male attractiveness, and the 'attractive amplifier', when it improves both quality assessment and male attractiveness). The game-theoretical model provides two main results. First, neutral and attractive amplifiers represent, respectively, a conditional and an unconditional signalling strategy. In fact, at the equilibrium, neutral amplifiers are displayed only by males whose advertising level lays above the female acceptance threshold, whereas attractive amplifiers are displayed by all signalling males, independent of their quality. Second, amplifiers of signals increase the differences in advertising levels between amplifying and not-amplifying males, but they decrease the differences within each group, so that the system converges towards an 'all-or-nothing' signalling strategy. By applying concepts from information theory, we show that the increase in information transfer at the perception level due to the amplifier of signals is contrasted by a decrease in information

Integrated-circuit balanced parametric amplifier

NASA Technical Reports Server (NTRS)

Dickens, L. E.

1975-01-01

Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

A High Input Impedance Low Noise Integrated Front-End Amplifier for Neural Monitoring.

PubMed

Zhou, Zhijun; Warr, Paul A

2016-12-01

Within neural monitoring systems, the front-end amplifier forms the critical element for signal detection and pre-processing, which determines not only the fidelity of the biosignal, but also impacts power consumption and detector size. In this paper, a novel combined feedback loop-controlled approach is proposed to compensate for input leakage currents generated by low noise amplifiers when in integrated circuit form alongside signal leakage into the input bias network. This loop topology ensures the Front-End Amplifier (FEA) maintains a high input impedance across all manufacturing and operational variations. Measured results from a prototype manufactured on the AMS 0.35 [Formula: see text] CMOS technology is provided. This FEA consumes 3.1 [Formula: see text] in 0.042 [Formula: see text], achieves input impedance of 42 [Formula: see text], and 18.2 [Formula: see text] input-referred noise.

Operation and maintenance, fire rescue air-pack. Volume 2: Communications

NASA Technical Reports Server (NTRS)

1972-01-01

The operation and maintenance procedures are described for the development model of the fire rescue air pack (FRAP) voice amplifier assembly, including the battery charger. Operational instructions include a general description of the assembly, specifications, and installation and operation. Maintenance instructions include theory of operation, preventive maintenance, repair, adjustment, and a parts list. The FRAP is intended to permit fire rescue personnel to enter a smoke-filled, toxic or oxygen depleted environment carrying their own source of breathing air. The voice amplifier assembly permits the wearer to communicate by voice with other persons in the vicinity. The battery charger assembly provides a means of keeping the amplifier batteries fully charged.

An 11 μ w, two-electrode transimpedance biosignal amplifier with active current feedback stabilization.

PubMed

Inan, O T; Kovacs, G T A

2010-04-01

A novel two-electrode biosignal amplifier circuit is demonstrated by using a composite transimpedance amplifier input stage with active current feedback. Micropower, low gain-bandwidth product operational amplifiers can be used, leading to the lowest reported overall power consumption in the literature for a design implemented with off-the-shelf commercial integrated circuits (11 μW). Active current feedback forces the common-mode input voltage to stay within the supply rails, reducing baseline drift and amplifier saturation problems that can be present in two-electrode systems. The bandwidth of the amplifier extends from 0.05-200 Hz and the midband voltage gain (assuming an electrode-to-skin resistance of 100 kΩ) is 48 dB. The measured output noise level is 1.2 mV pp, corresponding to a voltage signal-to-noise ratio approaching 50 dB for a typical electrocardiogram (ECG) level input of 1 mVpp. Recordings were taken from a subject by using the proposed two-electrode circuit and, simultaneously, a three-electrode standard ECG circuit. The residual of the normalized ensemble averages for both measurements was computed, and the power of this residual was 0.54% of the power of the standard ECG measurement output. While this paper primarily focuses on ECG applications, the circuit can also be used for amplifying other biosignals, such as the electroencephalogram.

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

NASA Technical Reports Server (NTRS)

Sullivan, Gerry

2001-01-01

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Minimum Uncertainty Coherent States Attached to Nondegenerate Parametric Amplifiers

NASA Astrophysics Data System (ADS)

Dehghani, A.; Mojaveri, B.

2015-06-01

Exact analytical solutions for the two-mode nondegenerate parametric amplifier have been obtained by using the transformation from the two-dimensional harmonic oscillator Hamiltonian. Some important physical properties such as quantum statistics and quadrature squeezing of the corresponding states are investigated. In addition, these states carry classical features such as Poissonian statistics and minimize the Heisenberg uncertainty relation of a pair of the coordinate and the momentum operators.

Bootstrapped two-electrode biosignal amplifier.

PubMed

Dobrev, Dobromir Petkov; Neycheva, Tatyana; Mudrov, Nikolay

2008-06-01

Portable biomedical instrumentation has become an important part of diagnostic and treatment instrumentation. Low-voltage and low-power tendencies prevail. A two-electrode biopotential amplifier, designed for low-supply voltage (2.7-5.5 V), is presented. This biomedical amplifier design has high differential and sufficiently low common mode input impedances achieved by means of positive feedback, implemented with an original interface stage. The presented circuit makes use of passive components of popular values and tolerances. The amplifier is intended for use in various two-electrode applications, such as Holter monitors, external defibrillators, ECG monitors and other heart beat sensing biomedical devices.

Phase noise in RF and microwave amplifiers.

PubMed

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

Learning and evolution in bacterial taxis: an operational amplifier circuit modeling the computational dynamics of the prokaryotic 'two component system' protein network.

PubMed

Di Paola, Vieri; Marijuán, Pedro C; Lahoz-Beltra, Rafael

2004-01-01

Adaptive behavior in unicellular organisms (i.e., bacteria) depends on highly organized networks of proteins governing purposefully the myriad of molecular processes occurring within the cellular system. For instance, bacteria are able to explore the environment within which they develop by utilizing the motility of their flagellar system as well as a sophisticated biochemical navigation system that samples the environmental conditions surrounding the cell, searching for nutrients or moving away from toxic substances or dangerous physical conditions. In this paper we discuss how proteins of the intervening signal transduction network could be modeled as artificial neurons, simulating the dynamical aspects of the bacterial taxis. The model is based on the assumption that, in some important aspects, proteins can be considered as processing elements or McCulloch-Pitts artificial neurons that transfer and process information from the bacterium's membrane surface to the flagellar motor. This simulation of bacterial taxis has been carried out on a hardware realization of a McCulloch-Pitts artificial neuron using an operational amplifier. Based on the behavior of the operational amplifier we produce a model of the interaction between CheY and FliM, elements of the prokaryotic two component system controlling chemotaxis, as well as a simulation of learning and evolution processes in bacterial taxis. On the one side, our simulation results indicate that, computationally, these protein 'switches' are similar to McCulloch-Pitts artificial neurons, suggesting a bridge between evolution and learning in dynamical systems at cellular and molecular levels and the evolutive hardware approach. On the other side, important protein 'tactilizing' properties are not tapped by the model, and this suggests further complexity steps to explore in the approach to biological molecular computing.

MW peak power Er/Yb-doped fiber femtosecond laser amplifier at 1.5 µm center wavelength

NASA Astrophysics Data System (ADS)

Han, Seongheum; Jang, Heesuk; Kim, Seungman; Kim, Young-Jin; Kim, Seung-Woo

2017-08-01

An erbium (Er)/ytterbium (Yb) co-doped double-clad fiber is configured to amplify single-mode pulses with a high average power of 10 W at a 1.5 µm center wavelength. The pulse duration at the exit of the Er/Yb fiber amplifier is measured to be ~440 fs after grating-based compression. The whole single-mode operation of the amplifier system permits the M 2-value of the output beam quality to be evaluated better than 1.05. By tuning the repetition rate from 100 MHz down to 600 kHz, the pulse peak power is scaled up to 19.1 MW to be the highest ever reported using an Er/Yb single-mode fiber. The proposed amplifier system is well suited for strong-power applications such as free-space LIDAR, non-thermal machining and medical surgery.

Monolithic integrated circuit charge amplifier and comparator for MAMA readout

NASA Technical Reports Server (NTRS)

Cole, Edward H.; Smeins, Larry G.

1991-01-01

Prototype ICs for the Solar Heliospheric Observatory's Multi-Anode Microchannel Array (MAMA) have been developed; these ICs' charge-amplifier and comparator components were then tested with a view to pulse response and noise performance. All model performance predictions have been exceeded. Electrostatic discharge protection has been included on all IC connections; device operation over temperature has been consistent with model predictions.

OFCC based voltage and transadmittance mode instrumentation amplifier

NASA Astrophysics Data System (ADS)

Nand, Deva; Pandey, Neeta; Pandey, Rajeshwari; Tripathi, Prateek; Gola, Prashant

2017-07-01

The operational floating current conveyor (OFCC) is a versatile active block due to the availability of both low and high input and output impedance terminals. This paper addresses the realization of OFCC based voltage and transadmittance mode instrumentation amplifiers (VMIA and TAM IA). It employs three OFCCs and seven resistors. The transadmittance mode operation can easily be obtained by simply connecting an OFCC based voltage to current converter at the output. The effect of non-idealities of OFCC, in particular finite transimpedance and tracking error, on system performance is also dealt with and corresponding mathematical expressions are derived. The functional verification is performed through SPICE simulation using CMOS based implementation of OFCC.

Temperature measurements in an ytterbium fiber amplifier up to the mode instability threshold

NASA Astrophysics Data System (ADS)

Beier, F.; Heinzig, M.; Sattler, Bettina; Walbaum, Till; Haarlammert, N.; Schreiber, T.; Eberhardt, R.; Tünnermann, A.

2016-03-01

We report on the measurement of the longitudinal temperature distribution in a fiber amplifier fiber during high power operation. The measurement signal of an optical frequency domain reflectometer is coupled to an ytterbium doped amplifier fiber via a wavelength division multiplexer. The longitudinal temperature distribution was examined for different pump powers with a sub mm resolution. The results show even small temperature variations induced by slight changes of the environmental conditions along the fiber. The mode instability threshold of the fiber under investigation was determined to be 480W and temperatures could be measured overall the measured output power values.

Development of a thermionic magnicon amplifier at 11.4 GHz. Final report for period May 16, 1995 - May 15, 2001

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gold, Steven H.; Fliflet, Arne W.

2001-08-25

This is the final report on the research program ''Development of a Thermionic Magnicon Amplifier at 11.4 GHz,'' which was carried out by the Plasma Physics Division of the Naval Research Laboratory. Its goal was to develop a high-power, frequency-doubling X-band magnicon amplifier, an advanced scanning-beam amplifier, for use in future linear colliders. The final design parameters were 61 MW at 11.424 GHz, 59 dB gain, 59% efficiency, 1 microsecond pulselength and 10 Hz repetition rate. At the conclusion of this program, the magnicon was undergoing high-power conditioning, having already demonstrated high-power operation, phase stability, a linear drive curve, amore » small operational frequency bandwidth and a spectrally pure, single-mode output.« less

The warm, rich sound of valve guitar amplifiers

NASA Astrophysics Data System (ADS)

Keeports, David

2017-03-01

Practical solid state diodes and transistors have made glass valve technology nearly obsolete. Nevertheless, valves survive largely because electric guitar players much prefer the sound of valve amplifiers to the sound of transistor amplifiers. This paper discusses the introductory-level physics behind that preference. Overdriving an amplifier adds harmonics to an input sound. While a moderately overdriven valve amplifier produces strong even harmonics that enhance a sound, an overdriven transistor amplifier creates strong odd harmonics that can cause dissonance. The functioning of a triode valve explains its creation of even and odd harmonics. Music production software enables the examination of both the wave shape and the harmonic content of amplified sounds.

Some Notes on Wideband Feedback Amplifiers

DOE R&D Accomplishments Database

Fitch, V.

1949-03-16

The extension of the passband of wideband amplifiers is a highly important problem to the designer of electronic circuits. Throughout the electronics industry and in many research programs in physics and allied fields where extensive use is made of video amplifiers, the foremost requirement is a passband of maximum width. This is necessary if it is desired to achieve a more faithful reproduction of transient wave forms, a better time resolution in physical measurements, or perhaps just a wider band gain-frequency response to sine wave signals. The art of electronics is continually faced with this omnipresent amplifier problem. In particular, the instrumentation techniques of nuclear physics require amplifiers with short rise times, a high degree of gain stability, and a linear response to high signal levels. While the distributed amplifier may solve the problems of those seeking only a wide passband, the requirements of stability and linearity necessitate using feedback circuits. This paper considers feedback amplifiers from the standpoint of high-frequency performance. The circuit conditions for optimum steady-state (sinusoidal) and transient response are derived and practical circuits (both interstage and output) are presented which fulfill these conditions. In general, the results obtained may be applied to the low-frequency end.

PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Shulga, V. M.; Gritsenko, I. A.; Sheshin, G. A.

2015-04-01

In this work, high electron mobility transistor (HEMT) was studied as a circuit element for amplifiers operating at temperatures of the order of 10-100 mK. To characterize the HEMT, the relative parameters are proposed to be used. HEMT characteristics were measured at a temperature of 50 mK for the first time. It follows from the reported studies that the power consumption of high-impedance HEMT-based amplifiers can be reduced down to hundreds of nanowatt or even lower.

Silicon Germanium Cryogenic Low Noise Amplifiers

NASA Astrophysics Data System (ADS)

Bardin, J. C.; Montazeri, S.; Chang, Su-Wei

2017-05-01

Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today’s cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

Optimising the efficiency of pulsed diode pumped Yb:YAG laser amplifiers for ns pulse generation.

PubMed

Ertel, K; Banerjee, S; Mason, P D; Phillips, P J; Siebold, M; Hernandez-Gomez, C; Collier, J C

2011-12-19

We present a numerical model of a pulsed, diode-pumped Yb:YAG laser amplifier for the generation of high energy ns-pulses. This model is used to explore how optical-to-optical efficiency depends on factors such as pump duration, pump spectrum, pump intensity, doping concentration, and operating temperature. We put special emphasis on finding ways to achieve high efficiency within the practical limitations imposed by real-world laser systems, such as limited pump brightness and limited damage fluence. We show that a particularly advantageous way of improving efficiency within those constraints is operation at cryogenic temperature. Based on the numerical findings we present a concept for a scalable amplifier based on an end-pumped, cryogenic, gas-cooled multi-slab architecture.

Simulation of energy buildups in solid-state regenerative amplifiers for 2-μm emitting lasers

NASA Astrophysics Data System (ADS)

Springer, Ramon; Alexeev, Ilya; Heberle, Johannes; Pflaum, Christoph

2018-02-01

A numerical model for solid-state regenerative amplifiers is presented, which is able to precisely simulate the quantitative energy buildup of stretched femtosecond pulses over passed roundtrips in the cavity. In detail, this model is experimentally validated with a Ti:Sapphire regenerative amplifier. Additionally, the simulation of a Ho:YAG based regenerative amplifier is conducted and compared to experimental data from literature. Furthermore, a bifurcation study of the investigated Ho:YAG system is performed, which leads to the identification of stable and instable operation regimes. The presented numerical model exhibits a well agreement to the experimental results from the Ti:Sapphire regenerative amplifier. Also, the gained pulse energy from the Ho:YAG system could be approximated closely, while the mismatch is explained with the monochromatic calculation of pulse amplification. Since the model is applicable to other solid-state gain media, it allows for the efficient design of future amplification systems based on regenerative amplification.

Double-pass tapered amplifier diode laser with an output power of 1 W for an injection power of only 200 μW.

PubMed

Bolpasi, V; von Klitzing, W

2010-11-01

A 1 W tapered amplifier requiring only 200 μW of injection power at 780 nm is presented in this paper. This is achieved by injecting the seeding light into the amplifier from its tapered side and feeding the amplified light back into the small side. The amplified spontaneous emission of the tapered amplifier is suppressed by 75 dB. The double-passed tapered laser, presented here, is extremely stable and reliable. The output beam remains well coupled to the optical fiber for a timescale of months, whereas the injection of the seed light did not require realignment for over a year of daily operation.

Noise-driven neuromorphic tuned amplifier.

PubMed

Fanelli, Duccio; Ginelli, Francesco; Livi, Roberto; Zagli, Niccoló; Zankoc, Clement

2017-12-01

We study a simple stochastic model of neuronal excitatory and inhibitory interactions. The model is defined on a directed lattice and internodes couplings are modulated by a nonlinear function that mimics the process of synaptic activation. We prove that such a system behaves as a fully tunable amplifier: the endogenous component of noise, stemming from finite size effects, seeds a coherent (exponential) amplification across the chain generating giant oscillations with tunable frequencies, a process that the brain could exploit to enhance, and eventually encode, different signals. On a wider perspective, the characterized amplification process could provide a reliable pacemaking mechanism for biological systems. The device extracts energy from the finite size bath and operates as an out of equilibrium thermal machine, under stationary conditions.

CMOS analogue amplifier circuits optimisation using hybrid backtracking search algorithm with differential evolution

NASA Astrophysics Data System (ADS)

Mallick, S.; Kar, R.; Mandal, D.; Ghoshal, S. P.

2016-07-01

This paper proposes a novel hybrid optimisation algorithm which combines the recently proposed evolutionary algorithm Backtracking Search Algorithm (BSA) with another widely accepted evolutionary algorithm, namely, Differential Evolution (DE). The proposed algorithm called BSA-DE is employed for the optimal designs of two commonly used analogue circuits, namely Complementary Metal Oxide Semiconductor (CMOS) differential amplifier circuit with current mirror load and CMOS two-stage operational amplifier (op-amp) circuit. BSA has a simple structure that is effective, fast and capable of solving multimodal problems. DE is a stochastic, population-based heuristic approach, having the capability to solve global optimisation problems. In this paper, the transistors' sizes are optimised using the proposed BSA-DE to minimise the areas occupied by the circuits and to improve the performances of the circuits. The simulation results justify the superiority of BSA-DE in global convergence properties and fine tuning ability, and prove it to be a promising candidate for the optimal design of the analogue CMOS amplifier circuits. The simulation results obtained for both the amplifier circuits prove the effectiveness of the proposed BSA-DE-based approach over DE, harmony search (HS), artificial bee colony (ABC) and PSO in terms of convergence speed, design specifications and design parameters of the optimal design of the analogue CMOS amplifier circuits. It is shown that BSA-DE-based design technique for each amplifier circuit yields the least MOS transistor area, and each designed circuit is shown to have the best performance parameters such as gain, power dissipation, etc., as compared with those of other recently reported literature.

Series transistors isolate amplifier from flyback voltage

NASA Technical Reports Server (NTRS)

Banks, W.

1967-01-01

Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.

Increasing power and amplified spontaneous emission suppression for weak signal amplification in pulsed fiber amplifier

NASA Astrophysics Data System (ADS)

Luo, Yi; Zhang, Hanwei; Wang, Xiaolin; Su, Rongtao; Ma, Pengfei; Zhou, Pu; Jiang, Zongfu

2017-10-01

In the pulsed fiber amplifiers with repetition frequency of several tens kHz, amplified spontaneous emission (ASE) is easy to build up because of the low repetition frequency and weak pulse signal. The ASE rises the difficulty to amplify the weak pulse signal effectively. We have demonstrated an all-fiber preamplifier stage structure to amplify a 40 kHz, 10 ns bandwidth (FWHM) weak pulse signal (299 μW) with center wavelength of 1062 nm. Compared synchronous pulse pump with continuous wave(CW) pump, the results indicate that synchronous pulse pump shows the better capability of increasing the output power than CW pump. In the condition of the same pump power, the output power of synchronous pulse pump is twice as high as CW pump. In order to suppress ASE, a longer gain fiber is utilized to reabsorb the ASE in which the wavelength is shorter than 1062nm. We amplified weak pulse signal via 0.8 m and 2.1 m gain fiber in synchronous pulse pump experiments respectively, and more ASE in the output spectra are observed in the 0.8 m gain fiber system. Due to the weaker ASE and consequent capability of higher pump power, the 2.1 m gain fiber is capable to achieve higher output power than shorter fiber. The output power of 2.1 m gain fiber case is limited by pump power.

Study on the amplifier experiment of end-pumped long pulse slab laser

NASA Astrophysics Data System (ADS)

Jin, Quanwei; Chen, Xiaoming; Jiang, JianFeng; Pang, Yu; Tong, Lixin; Li, Mi; Hu, Hao; Lv, Wenqiang; Gao, Qingsong; Tang, Chun

2018-03-01

The amplifier experiment research of end-pumped long pulse slab laser is developed, the results of out-put energy, optical-optical efficiency and pulse waveform are obtained at different experiment conditions, such as peak pumped power, amplifier power and pumped pulse width. The seed laser is CW fundamental transverse-mode operation fiber laser, the laser medium is composited Nd:YAG slab. Under end-pumped and the 2 passes, the laser obtain 7.65J out-put energy and 43.1% optical-optical efficiency with 45kW peak-pumped power and 386μs pump pulse width. The experimental results provide the basic for the optimization design to high frequency, high energy and high beam-quality slab lasers.

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.

2009-01-01

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Multiple excitation regenerative amplifier inertial confinement system

DOEpatents

George, V.E.; Haas, R.A.; Krupke, W.F.; Schlitt, L.G.

1980-05-27

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation. 11 figs.

Multiple excitation regenerative amplifier inertial confinement system

DOEpatents

George, Victor E. [Livermore, CA; Haas, Roger A. [Pleasanton, CA; Krupke, William F. [Pleasanton, CA; Schlitt, Leland G. [Livermore, CA

1980-05-27

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation.

Field-effect transistor improves electrometer amplifier

NASA Technical Reports Server (NTRS)

Munoz, R.

1964-01-01

An electrometer amplifier uses a field effect transistor to measure currents of low amperage. The circuit, developed as an ac amplifier, is used with an external filter which limits bandwidth to achieve optimum noise performance.

Third-Order Elliptic Lowpass Filter for Multi-Standard Baseband Chain Using Highly Linear Digitally Programmable OTA

NASA Astrophysics Data System (ADS)

Elamien, Mohamed B.; Mahmoud, Soliman A.

2018-03-01

In this paper, a third-order elliptic lowpass filter is designed using highly linear digital programmable balanced OTA. The filter exhibits a cutoff frequency tuning range from 2.2 MHz to 7.1 MHz, thus, it covers W-CDMA, UMTS, and DVB-H standards. The programmability concept in the filter is achieved by using digitally programmable operational transconductors amplifier (DPOTA). The DPOTA employs three linearization techniques which are the source degeneration, double differential pair and the adaptive biasing. Two current division networks (CDNs) are used to control the value of the transconductance. For the DPOTA, the third-order harmonic distortion (HD3) remains below -65 dB up to 0.4 V differential input voltage at 1.2 V supply voltage. The DPOTA and the filter are designed and simulated in 90 nm CMOS technology with LTspice simulator.

Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

NASA Astrophysics Data System (ADS)

Seneviratne, Sashieka

With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

Nanoparticles that Communicate In Vivo to Amplify Tumour Targeting

PubMed Central

von Maltzahn, Geoffrey; Park, Ji-Ho; Lin, Kevin Y.; Singh, Neetu; Schwöppe, Christian; Mesters, Rolf; Berdel, Wolfgang E.; Ruoslahti, Erkki; Sailor, Michael J.; Bhatia, Sangeeta N.

2012-01-01

Nanomedicines have enormous potential to improve the precision of cancer therapy, yet our ability to efficiently home these materials to regions of disease in vivo remains very limited. Inspired by the ability for communication to improve targeting in biological systems, such inflammatory cell recruitment to sites of disease, we construct systems where synthetic biological and nanotechnological components communicate to amplify disease targeting in vivo. These systems are composed of ‘Signalling’ modules (nanoparticles or engineered proteins) that target tumours and then locally active the coagulation cascade to broadcast tumour location to clot-targeted ‘Receiving’ nanoparticles in circulation that carry a diagnostic or therapeutic cargo, thereby amplifying their delivery. We show that communicating nanoparticle systems can be composed from multiple types of Signalling and Receiving modules, can transmit information via multiple molecular pathways in coagulation, can operate autonomously, and can target over 40-fold higher doses of chemotherapeutics to tumours than non-communicating controls. PMID:21685903

Nanoparticles that communicate in vivo to amplify tumour targeting

NASA Astrophysics Data System (ADS)

von Maltzahn, Geoffrey; Park, Ji-Ho; Lin, Kevin Y.; Singh, Neetu; Schwöppe, Christian; Mesters, Rolf; Berdel, Wolfgang E.; Ruoslahti, Erkki; Sailor, Michael J.; Bhatia, Sangeeta N.

2011-07-01

Nanomedicines have enormous potential to improve the precision of cancer therapy, yet our ability to efficiently home these materials to regions of disease in vivo remains very limited. Inspired by the ability of communication to improve targeting in biological systems, such as inflammatory-cell recruitment to sites of disease, we construct systems where synthetic biological and nanotechnological components communicate to amplify disease targeting in vivo. These systems are composed of ‘signalling’ modules (nanoparticles or engineered proteins) that target tumours and then locally activate the coagulation cascade to broadcast tumour location to clot-targeted ‘receiving’ nanoparticles in circulation that carry a diagnostic or therapeutic cargo, thereby amplifying their delivery. We show that communicating nanoparticle systems can be composed of multiple types of signalling and receiving modules, can transmit information through multiple molecular pathways in coagulation, can operate autonomously and can target over 40 times higher doses of chemotherapeutics to tumours than non-communicating controls.

Direct solar-pumped iodine laser amplifier

NASA Technical Reports Server (NTRS)

Han, Kwang S.

1987-01-01

This semiannual progress report covers the period from March 1, 1987 to September 30, 1987 under NASA grant NAG1-441 entitled 'Direct solar-pumped iodine laser amplifier'. During this period Nd:YAG and Nd:Cr:GSGG crystals have been tested for the solar-simulator pumped cw laser, and loss mechanisms of the laser output power in a flashlamp-pumped iodine laser also have been identified theoretically. It was observed that the threshold pump-beam intensities for both Nd:YAG and Nd:Cr:GSGG crystals were about 1000 solar constants, and the cw laser operation of the Nd:Cr:GSGG crystal was more difficult than that of the Nd:YAG crystal under the solar-simulator pumping. The possibility of the Nd:Cr:GSGG laser operation with a fast continuously chopped pumping was also observed. In addition, good agreement between the theoretical calculations and the experimental data on the loss mechanisms of a flashlamp-pumped iodine laser at various fill pressures and various lasants was achieved.

Optimal Design of a Traveling-Wave Kinetic Inductance Amplifier Operated in Three-Wave Mixing Mode

NASA Astrophysics Data System (ADS)

Erickson, Robert; Bal, Mustafa; Ku, Ksiang-Sheng; Wu, Xian; Pappas, David

In the presence of a DC bias, an injected pump, of frequency fP, and a signal, of frequency fS, undergo parametric three-way mixing (3WM) within a traveling-wave kinetic inductance (KIT) amplifier, producing an idler product of frequency fI =fP -fS . Periodic frequency stops are engineered into the coplanar waveguide of the device to enhance signal amplification. With fP placed just above the first frequency stop gap, 3WM broadband signal gain is achieved with maximum gain at fS =fP / 2 . Within a theory of the dispersion of traveling waves in the presence of these engineered loadings, which accounts for this broadband signal gain, we show how an optimal frequency-stop design may be constructed to achieve maximum signal amplification. The optimization approach we describe can be applied to the design of other nonlinear traveling-wave parametric amplifiers. This work was supported by the Army Research Office and the Laboratory for Physical Sciences under EAO221146, EAO241777, and the NIST Quantum Initiative. RPE acknowledges Grant 60NANB14D024 from the US Department of Commerce, NIST.

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

NASA Technical Reports Server (NTRS)

Laird, Jamie S.; Scheik, Leif; Vizkelethy, Gyorgy; Mojarradi, Mohammad M; Chen, Yuan; Miyahira, Tetsuo; Blalock, Benjamin; Greenwell, Robert; Doyle, Barney

2006-01-01

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

Angle amplifier based on multiplexed volume holographic gratings

NASA Astrophysics Data System (ADS)

Cao, Liangcai; Zhao, Yifei; He, Qingsheng; Jin, Guofan

2008-03-01

Angle amplifier of laser beam scanner is a widely used device in optical systems. Volume holographic optical elements can be applied in the angle amplifier. Compared with the traditional angle amplifier, it has the advantages of high angle resolution, high diffraction efficiency, small size, and high angle magnification and flexible design. Bragg anglewavelength- compensating recording method is introduced. Because of the Bragg compensatory relation between angle and wavelength, this device could be recorded at another wavelength. The design of the angle amplifier recording at the wavelength of 514.2nm for the working wavelength of 632.8nm is described. An optical setup for recording the angle amplifier device is designed and discussed. Experimental results in the photorefractive crystal Fe:LiNbO 3 demonstrate the feasibility of the angle amplifier scheme.

Experimental design of laminar proportional amplifiers

NASA Technical Reports Server (NTRS)

Hellbaum, R. F.

1976-01-01

An experimental program was initiated at Langley Research Center to study the effects of various parameters on the design of laminar proportional beam deflection amplifiers. Matching and staging of amplifiers to obtain high-pressure gain was also studied. Variable parameters were aspect ratio, setback, control length, receiver distance, receiver width, width of center vent, and bias pressure levels. Usable pressure gains from 4 to 19 per stage can now be achieved, and five amplifiers were staged together to yield pressure gains up to 2,000,000.

Solid state Impatt Amplifiers performance data

DOT National Transportation Integrated Search

1973-12-01

Evaluation data on an 8-watt and a 16-watt Impatt Amplifier represented to concisely describe the performance of these amplifiers. The data include component specifications and photographs, TSC test set-up configuration, amplitude and phase character...

A flexible CPW package for a 30 GHz MMIC amplifier. [coplanar waveguide

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Taub, Susan R.

1992-01-01

A novel package, which consists of a carrier housing, has been developed for monolithic-millimeter wave Integrated Circuit amplifiers which operate at 30 giga-Hz. The carrier has coplanar waveguide (CPW) interconnects and provides heat-sinking, tuning, and cascading capabilities. The housing provides electrical isolation, mechanical protection and a feed-thru for biasing.

The effect of pumping noise on the characteristics of a single-stage parametric amplifier

NASA Astrophysics Data System (ADS)

Medvedev, S. Iu.; Muzychuk, O. V.

1983-10-01

An analysis is made of the operation of a single-stage parametric amplifier based on a varactor with a sharp transition. Analytical expressions are obtained for the statistical moments of the output signal, the signal-noise ratio, and other characteristics in the case when the output signal and the pump are a mixture of harmonic oscillation and Gaussian noise. It is shown that, when a noise component is present in the pump, an increase of its harmonic component to values close to the threshold leads to a sharp decrease in the signal-noise ratio at the amplifier output.

Method to amplify variable sequences without imposing primer sequences

DOEpatents

Bradbury, Andrew M.; Zeytun, Ahmet

2006-11-14

The present invention provides methods of amplifying target sequences without including regions flanking the target sequence in the amplified product or imposing amplification primer sequences on the amplified product. Also provided are methods of preparing a library from such amplified target sequences.

Design and 3D simulation of a two-cavity wide-gap relativistic klystron amplifier with high power injection

NASA Astrophysics Data System (ADS)

Bai, Xianchen; Yang, Jianhua; Zhang, Jiande

2012-08-01

By using an electromagnetic particle-in-cell (PIC) code, an S-band two-cavity wide-gap klystron amplifier (WKA) loaded with washers/rods structure is designed and investigated for high power injection application. Influences of the washers/rods structure on the high frequency characteristics and the basic operation of the amplifier are presented. Generally, the rod structure has great impacts on the space-charge potential depression and the resonant frequency of the cavities. Nevertheless, if only the resonant frequency is tuned to the desired operation frequency, effects of the rod size on the basic operation of the amplifier are expected to be very weak. The 3-dimension (3-D) PIC simulation results show an output power of 0.98 GW corresponding to an efficiency of 33% for the WKA, with a 594 keV, 5 kA electron beam guided by an external magnetic field of 1.5 Tesla. Moreover, if a conductive plane is placed near the output gap, such as the electron collector, the beam potential energy can be further released, and the RF power can be increased to about 1.07 GW with the conversion efficiency of about 36%.

Thermal and dynamic range characterization of a photonics-based RF amplifier

NASA Astrophysics Data System (ADS)

Noque, D. F.; Borges, R. M.; Muniz, A. L. M.; Bogoni, A.; Cerqueira S., Arismar, Jr.

2018-05-01

This work reports a thermal and dynamic range characterization of an ultra-wideband photonics-based RF amplifier for microwave and mm-waves future 5G optical-wireless networks. The proposed technology applies the four-wave mixing nonlinear effect to provide RF amplification in analog and digital radio-over-fiber systems. The experimental analysis from 300 kHz to 50 GHz takes into account different figures of merit, such as RF gain, spurious-free dynamic range and RF output power stability as a function of temperature. The thermal characterization from -10 to +70 °C demonstrates a 27 dB flat photonics-assisted RF gain over the entire frequency range under real operational conditions of a base station for illustrating the feasibility of the photonics-assisted RF amplifier for 5G networks.

A high efficiency Ku-band radial line relativistic klystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang

2016-07-15

To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a highmore » power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.« less

Precision absolute-value amplifier for a precision voltmeter

DOEpatents

Hearn, W.E.; Rondeau, D.J.

1982-10-19

Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resistor is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resistor. The output current through the load resistor is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resistor. A second gain determining resistor is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.

Precision absolute value amplifier for a precision voltmeter

DOEpatents

Hearn, William E.; Rondeau, Donald J.

1985-01-01

Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resister is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resister. The output current through the load resister is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resister. A second gain determining resister is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.

Robust 1550-nm single-frequency all-fiber ns-pulsed fiber amplifier for wind-turbine predictive control by wind lidar

NASA Astrophysics Data System (ADS)

Beier, F.; de Vries, O.; Schreiber, T.; Eberhardt, R.; Tünnermann, A.; Bollig, C.; Hofmeister, P. G.; Schmidt, J.; Reuter, R.

2013-02-01

Scaling of the power yield of offshore wind farms relies on the capacity of the individual wind turbines. This results in a trend to very large rotor diameters, which are difficult to control. It is crucial to monitor the inhomogeneous wind field in front of the wind turbines at different distances to ensure reliable operation and a long lifetime at high output levels. In this contribution, we demonstrate an all-fiber ns-pulsed fiber amplifier based on cost-efficient commercially available components. The amplifier is a suitable source for coherent Doppler lidar pulses making a predictive control of the turbine operation feasible.

Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal.

PubMed

Nair, Aswathi; Bhattacharya, Prasenjit; Sambandan, Sanjiv

2017-12-20

The development of reliable, high performance integrated circuits based on thin film transistors (TFTs) is of interest for the development of flexible electronic circuits. In this work we illustrate the modulation of TFT transconductance via the texturing of the gate metal created by the addition of a conductive pattern on top of a planar gate. Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with local variations in the radius of curvature. This influences various TFT parameters such as the subthreshold slope, gate voltage at the onset of conduction, contact resistance and gate capacitance. Specific studies are performed on textures based on periodic striations oriented along different directions. Textured TFTs showed upto ±40% variation in transconductance depending on the texture orientation as compared to conventional planar gate TFTs. Analytical models are developed and compared with experiments. Gain boosting in common source amplifiers based on textured TFTs as compared to conventional TFTs is demonstrated.

Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Wafer-scalable high-performance CVD graphene devices and analog circuits

NASA Astrophysics Data System (ADS)

Tao, Li; Lee, Jongho; Li, Huifeng; Piner, Richard; Ruoff, Rodney; Akinwande, Deji

2013-03-01

Graphene field effect transistors (GFETs) will serve as an essential component for functional modules like amplifier and frequency doublers in analog circuits. The performance of these modules is directly related to the mobility of charge carriers in GFETs, which per this study has been greatly improved. Low-field electrostatic measurements show field mobility values up to 12k cm2/Vs at ambient conditions with our newly developed scalable CVD graphene. For both hole and electron transport, fabricated GFETs offer substantial amplification for small and large signals at quasi-static frequencies limited only by external capacitances at high-frequencies. GFETs biased at the peak transconductance point featured high small-signal gain with eventual output power compression similar to conventional transistor amplifiers. GFETs operating around the Dirac voltage afforded positive conversion gain for the first time, to our knowledge, in experimental graphene frequency doublers. This work suggests a realistic prospect for high performance linear and non-linear analog circuits based on the unique electron-hole symmetry and fast transport now accessible in wafer-scalable CVD graphene. *Support from NSF CAREER award (ECCS-1150034) and the W. M. Keck Foundation are appreicated.

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement.

PubMed

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 10 11 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

NASA Astrophysics Data System (ADS)

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Design, Simulation and Experiments on the Recirculating Crossed-Field Planar Amplifier

NASA Astrophysics Data System (ADS)

Exelby, Steven; Greening, Geoffrey; Jordan, Nicholas; Packard, Drew; Lau, Yue Ying; Gilgenbach, Ronald; Simon, David; Hoff, Brad

2017-10-01

The Recirculating Planar Crossed-Field Amplifier (RPCFA) is the focus of simulation and experimental work. This amplifier, inspired by the Recirculating Planar Magnetron, is driven by the Michigan Electron Long Beam Accelerator (MELBA), configured to deliver a -300 kV, 1-10 kA, 0.3-1.0 µs pulse. For these parameters, a slow wave structure (SWS), cathode, and housing were designed using the finite element frequency domain code Ansys HFSS, and verified using the PIC code, MAGIC. Simulations of this device demonstrated amplification of 1.3 MW, 3 GHz signal to approximately 29 MW (13.5 dB) with nearly 53% electronic efficiency. Simulations have also shown the device is zero-drive stable, operates under a range of voltages, with bandwidth of 10%, on par with existing CFAs. The RPCFA SWS has been fabricated using 3D printing, while the rest of the device has been developed using traditional machining. Experimental RPCFA cold tube characteristics matched those from simulation. Experiments on MELBA have demonstrated zero-drive stability and amplifier experiments are underway. This work was supported by the AFOSR Grant FA9550-15-1-0097.

Bandwidth tunable amplifier for recording biopotential signals.

PubMed

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

Amplified OTDR systems for multipoint corrosion monitoring.

PubMed

Nascimento, Jehan F; Silva, Marcionilo J; Coêlho, Isnaldo J S; Cipriano, Eliel; Martins-Filho, Joaquim F

2012-01-01

We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations.

Amplified OTDR Systems for Multipoint Corrosion Monitoring

PubMed Central

Nascimento, Jehan F.; Silva, Marcionilo J.; Coêlho, Isnaldo J. S.; Cipriano, Eliel; Martins-Filho, Joaquim F.

2012-01-01

We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations. PMID:22737017

Josephson Parametric Reflection Amplifier with Integrated Directionality

NASA Astrophysics Data System (ADS)

Westig, M. P.; Klapwijk, T. M.

2018-06-01

A directional superconducting parametric amplifier in the GHz frequency range is designed and analyzed, suitable for low-power read-out of microwave kinetic inductance detectors employed in astrophysics and when combined with a nonreciprocal device at its input also for circuit quantum electrodynamics. It consists of a one-wavelength-long nondegenerate Josephson parametric reflection amplifier circuit. The device has two Josephson-junction oscillators, connected via a tailored impedance to an on-chip passive circuit which directs the in- to the output port. The amplifier provides a gain of 20 dB over a bandwidth of 220 MHz on the signal as well as on the idler portion of the amplified input and the total photon shot noise referred to the input corresponds to maximally approximately 1.3 photons per second per Hertz of bandwidth. We predict a factor of 4 increase in dynamic range compared to conventional Josephson parametric amplifiers.

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

2009-01-01

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

Quadrature demultiplexing using a degenerate vector parametric amplifier.

PubMed

Lorences-Riesgo, Abel; Liu, Lan; Olsson, Samuel L I; Malik, Rohit; Kumpera, Aleš; Lundström, Carl; Radic, Stojan; Karlsson, Magnus; Andrekson, Peter A

2014-12-01

We report on quadrature demultiplexing of a quadrature phase-shift keying (QPSK) signal into two cross-polarized binary phase-shift keying (BPSK) signals with negligible penalty at bit-error rate (BER) equal to 10(-9). The all-optical quadrature demultiplexing is achieved using a degenerate vector parametric amplifier operating in phase-insensitive mode. We also propose and demonstrate the use of a novel and simple phase-locked loop (PLL) scheme based on detecting the envelope of one of the signals after demultiplexing in order to achieve stable quadrature decomposition.

A dc amplifier for nuclear particle measurement

NASA Technical Reports Server (NTRS)

Macnee, A. B.; Masnari, N. A.

1978-01-01

A monolithic preamplifier-postamplifier combination has been developed for use with solid state particle detectors. The direct coupled amplifiers employ interdigitated n-channel JFET's, diodes, and diffused resistors. The circuits developed demonstrate the feasibility of matching the performance of existing discrete component designs. The fabrication procedures for the monolithic amplifier fabrication are presented and the results of measurements on a limited number of sample amplifiers are given.

New low-level a-c amplifier provides adjustable noise cancellation and automatic temperature compensation

NASA Technical Reports Server (NTRS)

Smith, J. R., Jr.

1964-01-01

Circuit utilizing a transistorized differential amplifier is developed for biomedical use. This low voltage operating circuit provides adjustable cancellation at the input for unbalanced noise signals, and automatic temperature compensation is accomplished by a single active element across the input-output ends.

SiC/Si diode trigger circuit provides automatic range switching for log amplifier

NASA Technical Reports Server (NTRS)

1967-01-01

SiC/Si diode pair provides automatic range change to extend the operating range of a logarithmic amplifier-conversion circuit and assures stability at or near the range switch-over point. the diode provides hysteresis for a trigger circuit that actuates a relay at the desired range extension point.

Special Component Designs for Differential-Amplifier MMICs

NASA Technical Reports Server (NTRS)

Kangaslahti, Pekka

2010-01-01

Special designs of two types of electronic components transistors and transmission lines have been conceived to optimize the performances of these components as parts of waveguide-embedded differential-amplifier monolithic microwave integrated circuits (MMICs) of the type described in the immediately preceding article. These designs address the following two issues, the combination of which is unique to these particular MMICs: Each MMIC includes a differential double-strip transmission line that typically has an impedance between 60 and 100 W. However, for purposes of matching of impedances, transmission lines having lower impedances are also needed. The transistors in each MMIC are, more specifically, one or more pair(s) of InP-based high-electron-mobility transistors (HEMTs). Heretofore, it has been common practice to fabricate each such pair as a single device configured in the side-to-side electrode sequence source/gate/drain/gate/source. This configuration enables low-inductance source grounding from the sides of the device. However, this configuration is not suitable for differential operation, in which it is necessary to drive the gates differentially and to feed the output from the drain electrodes differentially. The special transmission-line design provides for three conductors, instead of two, in places where lower impedance is needed. The third conductor is a metal strip placed underneath the differential double-strip transmission line. The third conductor increases the capacitance per unit length of the transmission line by such an amount as to reduce the impedance to between 5 and 15 W. In the special HEMT-pair design, the side-to-side electrode sequence is changed to drain/gate/source/gate/ drain. In addition, the size of the source is reduced significantly, relative to corresponding sizes in prior designs. This reduction is justified by the fact that, by virtue of the differential configuration, the device has an internal virtual ground, and

Combination ring cavity and backward Raman waveguide amplifier

DOEpatents

Kurnit, Norman A.

1983-01-01

A combination regenerative ring and backward Raman waveguide amplifier and a combination regenerative ring oscillator and backward Raman waveguide amplifier which produce Raman amplification, pulse compression, and efficient energy extraction from the CO.sub.2 laser pump signal for conversion into a Stokes radiation signal. The ring cavity configuration allows the CO.sub.2 laser pump signal and Stokes signal to copropagate through the Raman waveguide amplifier. The backward Raman waveguide amplifier configuration extracts a major portion of the remaining energy from the CO.sub.2 laser pump signal for conversion to Stokes radiation. Additionally, the backward Raman amplifier configuration produces a Stokes radiation signal which has a high intensity and a short duration. Adjustment of the position of overlap of the Stokes signal and the CO.sub.2 laser pump signal in the backward Raman waveguide amplifiers alters the amount of pulse compression which can be achieved.

Quantum-Limited Directional Amplifiers with Optomechanics

NASA Astrophysics Data System (ADS)

Malz, Daniel; Tóth, László D.; Bernier, Nathan R.; Feofanov, Alexey K.; Kippenberg, Tobias J.; Nunnenkamp, Andreas

2018-01-01

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave signals in an electromechanical setup comprising two microwave cavities and two mechanical resonators. We show that both can reach their respective quantum limits on added noise. In the reverse direction, they emit thermal noise stemming from the mechanical resonators; we discuss how this noise can be suppressed, a crucial aspect for technological applications. The isolation bandwidth in both is of the order of the mechanical linewidth divided by the amplitude gain. We derive the bandwidth and gain-bandwidth product for both and find that the phase-sensitive amplifier has an unlimited gain-bandwidth product. Our study represents an important step toward flexible, on-chip integrated nonreciprocal amplifiers of microwave signals.

How to characterize the nonlinear amplifier?

NASA Technical Reports Server (NTRS)

Kallistratova, Dmitri Kouznetsov; Cotera, Carlos Flores

1994-01-01

The conception of the amplification of the coherent field is formulated. The definition of the coefficient of the amplification as the relation between the mean value of the field at the output to the value at the input and the definition of the noise as the difference between the number of photons in the output mode and square of the modulus of the mean value of the output amplitude are considered. Using a simple example it is shown that by these definitions the noise of the nonlinear amplifier may be less than the noise of the ideal linear amplifier of the same amplification coefficient. Proposals to search another definition of basic parameters of the nonlinear amplifiers are discussed. This definition should enable us to formulate the universal fundamental lower limit of the noise which should be valid for linear quantum amplifiers as for nonlinear ones.

Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

NASA Technical Reports Server (NTRS)

Thrivikraman, Tushar; Perkovic-Martin, Dragana; Jenabi, Masud; Hoffman, James

2012-01-01

This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

Efficient visible and UV generation by frequency conversion of a mode-filtered fiber amplifier

NASA Astrophysics Data System (ADS)

Kliner, Dahv A. V.; Di Teodoro, Fabio; Koplow, Jeffrey P.; Moore, Sean W.; Smith, Arlee V.

2003-07-01

We have generated the second, third, fourth, and fifth harmonics of the output of a Yb-doped fiber amplifier seeded by a passively Q-switched Nd:YAG microchip laser. The fiber amplifier employed multimode fiber (25 μm core diameter, V ~ 7.4) to provide high-peak-power pulses, but diffraction-limited beam quality was obtained by use of bend-loss-induced mode filtering. The amplifier output had a pulse duration of 0.97 ns and smooth, transform-limited temporal and spectral profiles (~500 MHz linewidth). We obtained high nonlinear conversion efficiencies using a simple optical arrangement and critically phase-matched crystals. Starting with 320 mW of average power at 1064 nm (86 ´J per pulse at a 3.7 kHz repetition rate), we generated 160 mW at 532 nm, 38 mW at 355 nm, 69 mW at 266 nm, and 18 mW at 213 nm. The experimental results are in excellent agreement with calculations. Significantly higher visible and UV powers will be possible by operating the fiber amplifier at higher repetition rates and pulse energies and by further optimizing the nonlinear conversion scheme.

A velocity-amplified electromagnetic energy harvester for small amplitude vibration

NASA Astrophysics Data System (ADS)

Klein, J.; Zuo, L.

2017-09-01

Dedicated, self-powered wireless sensors are widely being studied for use throughout many industries to monitor everyday operations, maintain safety, and report performance characteristics. To enable sensors to power themselves, harvesting energy from machine vibration has been studied, however, its overall effectiveness can be hampered due to small vibration amplitudes and thus limited harvestable energy density. This paper addresses the issue by proposing a novel vibration energy harvester architecture in which a compliant mechanism and proof mass system is used to amplify the vibrational velocity of machine vibration for a linear electromagnetic generator. A prototype has been fabricated and experimentally characterized to verify its effectiveness. When operating at its natural frequency in a low base amplitude, 0.001 inch (25.4 μm) at 19.4 Hz, during lab tests, the harvester has been shown to produce up to 0.91 V AC open voltage, and a maximum power of 2 mW, amplifying the relative proof mass velocity by approximately 5.4 times. This method of locally increasing the machine vibrational velocity has been shown to be a viable option for increasing the potential power output of an energy harvester. In addition, a mathematical model is created based on pseudo-rigid-body dynamics and the analysis matches closely with experiments.

RF Single Electron Transistor Readout Amplifiers for Superconducting Astronomical Detectors for X-Ray to Sub-mm Wavelengths

NASA Technical Reports Server (NTRS)

Stevenson, Thomas; Aassime, Abdelhanin; Delsing, Per; Frunzio, Luigi; Li, Li-Qun; Prober, Daniel; Schoelkopf, Robert; Segall, Ken; Wilson, Chris; Stahle, Carl

2000-01-01

We report progress on using a new type of amplifier, the Radio-Frequency Single-Electron Transistor (RF-SET), to develop multi-channel sensor readout systems for fast and sensitive readout of high impedance cryogenic photodetectors such as Superconducting Tunnel Junctions and Single Quasiparticle Photon Counters. Although cryogenic, these detectors are desirable because of capabilities not other-wise attainable. However, high impedances and low output levels make low-noise, high-speed readouts challenging, and large format arrays would be facilitated by compact, low-power, on-chip integrated amplifiers. Well-suited for this application are RF-SETs, very high performance electrometers which use an rf readout technique to provide 100 MHz bandwidth. Small size, low power, and cryogenic operation allow direct integration with detectors, and using multiple rf carrier frequencies permits simultaneous readout of 20-50 amplifiers with a common electrical connection. We describe both the first 2-channel demonstration of this wavelength division multiplexing technique for RF-SETs, and Charge-Locked-Loop operation with 100 kHz of closed-loop bandwidth.

Cryogenic ultra-low-noise SiGe transistor amplifier.

PubMed

Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

2011-10-01

An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.

Fiber optic signal amplifier using thermoelectric power generation

DOEpatents

Hart, M.M.

1993-01-01

A remote fiber optic signal amplifier for use as a repeater/amplifier, such as in transoceanic communication, powered by a Pu{sub 238} or Sr{sub 90} thermoelectric generator. The amplifier comprises a unit with connections on the receiving and sending sides of the communications system, and an erbium-doped fiber amplifier connecting each sending fiber to each receiving fiber. The thermoelectric generator, preferably a Pu{sub 238} or Sr{sub 90} thermoelectric generator delivers power to the amplifiers through a regulator. The heat exchange surfaces of the thermoelectric generator are made of material resistant to corrosion and biological growth and are directly exposed to the outside, such as the ocean water in transoceanic communications.

Fiber optic signal amplifier using thermoelectric power generation

DOEpatents

Hart, M.M.

1995-04-18

A remote fiber optic signal amplifier for use as a repeater/amplifier, such as in transoceanic communications, powered by a Pu{sub 238} or Sr{sub 90} thermoelectric generator. The amplifier comprises a unit with connections on the receiving and sending sides of the communications system, and an erbium-doped fiber amplifier connecting each sending fiber to each receiving fiber. The thermoelectric generator, preferably a Pu{sub 238} or Sr{sub 90} thermoelectric generator delivers power to the amplifiers through a regulator. The heat exchange surfaces of the thermoelectric generator are made of materials resistant to corrosion and biological growth and are directly exposed to the outside, such as the ocean water in transoceanic communications. 2 figs.

Fiber optic signal amplifier using thermoelectric power generation

DOEpatents

Hart, Mark M.

1995-01-01

A remote fiber optic signal amplifier for use as a repeater/amplifier, such as in transoceanic communications, powered by a Pu.sub.238 or Sr.sub.90 thermoelectric generator. The amplifier comprises a unit with connections on the receiving and sending sides of the communications system, and an erbium-doped fiber amplifier connecting each sending fiber to each receiving fiber. The thermoelectric generator, preferably a Pu.sub.238 or Sr.sub.90 thermoelectric generator delivers power to the amplifiers through a regulator. The heat exchange surfaces of the thermoelectric generator are made of materials resistant to corrosion and biological growth and are directly exposed to the outside, such as the ocean water in transoceanic communications.

A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems

NASA Technical Reports Server (NTRS)

Thrivikraman, Tushar; Horst, Stephen; Price, Douglas; Hoffman, James; Veilleux, Louise

2014-01-01

This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.

STABILIZED TRANSISTOR AMPLIFIER

DOEpatents

Noe, J.B.

1963-05-01

A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

Sensor Amplifier for the Venus Ground Ambient

NASA Technical Reports Server (NTRS)

DelCastillo, Linda Y.; Johnson, Travis W.; Hatake, Toshiro; Mojarradi, Mohammad M.; Kolawa, Elizabeth A.

2006-01-01

Previous Venus Landers employed high temperature pressure vessels, with thermally protected electronics, to achieve successful missions, with a maximum surface lifetime of 127 minutes. Extending the operating range of electronic systems to the temperatures (480 C) and pressures (90 bar) of the Venus ground ambient would significantly increase the science return of future missions. Toward that end, the current work describes the innovative design of a sensor preamplifier, capable of working in the Venus ground ambient and designed using commercial components (thermionic vacuum tubes, wide band gap transistors, thick film resistors, advanced high temperature capacitors, and monometallic interfaces) To identify commercial components and electronic packaging materials that are capable of operation within the specified environment, a series of active devices, passive components, and packaging materials were screened for operability at 500C, assuming a 10x increase in the mission lifetime. In addition. component degradation as a function of time at 500(deg)C was evaluated. Based on the results of these preliminary evaluations, two amplifiers were developed.

Tunable microstrip SQUID amplifiers for the Gen 2 Axion Dark Matter eXperiment (ADMX)

NASA Astrophysics Data System (ADS)

O'Kelley, Sean; Hilton, Gene; Clarke, John; ADMX Collaboration

2016-03-01

We present a series of tunable microstrip SQUID (Superconducting Quantum Interference Device) amplifiers (MSAs) for installation in ADMX. The axion dark matter candidate is detected via Primakoff conversion to a microwave photon in a high-Q (~100,000) tunable microwave cavity cooled with a dilution refrigerator in a 7-tesla magnetic field. The microwave photon frequency ν is a function of the unknown axion mass, so both the cavity and amplifier must be scanned over a wide frequency range. An MSA is a linear, phase-preserving amplifier consisting of a square washer loop, fabricated from a thin Nb film, incorporating two Josephson tunnel junctions with resistive shunts to prevent hysteresis. The input is coupled via a microstrip made from a square Nb coil deposited over the washer with an intervening insulating layer. Tunability is achieved by terminating the microstrip with GaAs varactors that operate below 100 mK. By varying the varactor capacitance with a bias voltage, the resonant frequency is varied by up to a factor of 2. We demonstrate several devices operating below 100 mK, matched to the discrete operating bands of ADMX at frequencies ranging from 560 MHz to 1 GHz. The MSAs exhibit gains exceeding 20 dB and the associated noise temperatures, measured with a hot/cold load, approach the standard quantum limit (hν/kB) . Supported by DOE Grants DE - FG02 - 97ER41029, DE - FG02 - 96ER40956, DE - AC52 - 07NA27344, DE - AC03 - 76SF00098, and the Livermore LDRD program.

Quantitative analysis of four EMG amplifiers.

PubMed

Perreault, E J; Hunter, I W; Kearney, R E

1993-09-01

Four typical EMG amplifiers were tested quantitatively to observe the diversity and specificity of available equipment. Gain, phase, common mode rejection ratio (CMRR) and noise characteristics were measured for each device. Various gain and phase responses were observed, each best suited to specific application areas. For all amplifiers, the CMRR was shown to decrease dramatically in the presence of input impedance mismatches of more than 10 k omega between the two electrodes. Because such impedance mismatches are common on the skin surface, these results indicate that proper skin preparation is required to maximize the noise rejection capabilities of the tested amplifiers.

Development of a low-noise amplifier for neutron detection in harsh environment

NASA Astrophysics Data System (ADS)

Angelone, M.; Cardarelli, R.; Paolozzi, L.; Pillon, M.

2014-10-01

A fast matching charge amplifier for neutron spectroscopy in harsh environment has been developed and tested at the JET Tokamak. This front-end circuit is capable to operate at a distance up to 100 meters from a sensor without increasing its equivalent noise charge. Further improvements are possible by exploiting the intrinsic performance of silicon-germanium bipolar junction transistors.

Amplified Policymaking

ERIC Educational Resources Information Center

Prince, Katherine; Woempner, Carolyn

2010-01-01

This brief examines the policy implications of two drivers of change presented in the "2020 Forecast: Creating the Future of Learning"-- Pattern Recognition and Amplified Organization. These drivers point toward a series of cultural shifts and illuminate how we are developing new ways of organizing, constructing, and managing knowledge.…

Organic transistors for electrophysiology (Presentation Recording)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2015-10-01

Efficient local transduction of biological signals is of critical importance for mapping brain activity and diagnosing pathological conditions. Traditional devices used to record electrophysiological signals are passive electrodes that require (pre)amplification with downstream electronics. Organic electrochemical transistors (OECTs) that utilize conducting polymer films as the channel have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance (>3 mS). The materials properties and physics of such transistors, however, remains largely unexplored thus limiting their potential. Here we show that the uptake of ionic charge from an electrolyte into a poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) OECT channel leads to a dependence of the effective capacitance on the entire volume of the film. Subsequently, device transconductance and time response vary with channel thickness, a defining characteristic that differentiates OECTs from field effect transistors, and provides a new degree of freedom for device engineering. Using this understanding we tailor OECTs for a variety of low (1-100 Hz) and high (1-10 kHz) frequency applications, including human electroencephalography, where high transconductance devices impart richer signal content without the need for additional amplification circuitry. We also show that the materials figure of merit OECTs is the product of hole mobility and volumetric capacitance of the channel, leading to design rules for novel high performance materials.

Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; MacLeod, Todd C.; Ho, Fat D.

2011-01-01

In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

Design of a lock-amplifier circuit

NASA Astrophysics Data System (ADS)

Liu, H.; Huang, W. J.; Song, X.; Zhang, W. Y.; Sa, L. B.

2017-01-01

The lock-in amplifier is recovered by phase sensitive detection technique for the weak signal submerged in the noise background. This design is based on the TI ultra low power LM358, INA129, OPA227, OP07 and other chips as the core design and production of the lock-in amplifier. Signal generator by 10m ohms /1K ohm resistance points pressure network 10 mu V 1mV adjustable sine wave signal s (T). The concomitant interference signal together through the AC amplifier and band-pass filter signal x (T), on the other hand reference signal R (T) driven by square wave phase shift etc. steps to get the signal R (T), two signals and by phase sensitive detector are a DC full wave, again through its low pass filter and a DC amplifier to be measured signal more accurate detection, the final circuit through the AD conversion and the use of single-chip will display the output.

Dye laser traveling wave amplifier

NASA Technical Reports Server (NTRS)

Davidson, F.; Hohman, J.

1984-01-01

A flashlamp pumped dye laser suitable for use as a single stage amplifier is described. Particular emphasis is placed on the efforts to increase output pulse energy and improve the temporal profile of the injected pulse. By using high power thin film polarizers, output energies reach from 4 to 45 mJ. Various dispersive elements are used to develop an amplified pulse with an extremely clean temporal profile.

Voltage Amplifier Based on Organic Electrochemical Transistor.

PubMed

Braendlein, Marcel; Lonjaret, Thomas; Leleux, Pierre; Badier, Jean-Michel; Malliaras, George G

2017-01-01

Organic electrochemical transistors (OECTs) are receiving a great deal of attention as amplifying transducers for electrophysiology. A key limitation of this type of transistors, however, lies in the fact that their output is a current, while most electrophysiology equipment requires a voltage input. A simple circuit is built and modeled that uses a drain resistor to produce a voltage output. It is shown that operating the OECT in the saturation regime provides increased sensitivity while maintaining a linear signal transduction. It is demonstrated that this circuit provides high quality recordings of the human heart using readily available electrophysiology equipment, paving the way for the use of OECTs in the clinic.

Development of FIR arrays with integrating amplifiers

NASA Technical Reports Server (NTRS)

Young, Erick T.

1988-01-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Development of FIR arrays with integrating amplifiers

NASA Astrophysics Data System (ADS)

Young, Erick T.

1988-08-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Development FD-SOI MOSFET Amplifiers for Integrated Read-Out Circuit of Superconducting-Tunnel-Junction Single-Photon-Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiuchi, Kenji; et al.

We proposed a new high-resolution single-photon infrared spectrometer for search for radiative decay of cosmic neutrino background (CνB). The superconducting-tunnel-junctions(STJs) are used as a single-photon counting device. Each STJ consists of Nb/Al/Al xO y/Al/Nb layers, and their thicknesses are optimized for the operation temperature at 370 mK cooled by a 3He sorption refrigerator. Our STJs achieved the leak current 250 pA, and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio (S/N). FD-SOI MOSFETs can be operated at cryogenic temperature ofmore » 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a nonlinear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors is 0.4 mV, and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET-based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp is required to have a fast response (GBW ≥ 100 MHz), and it must have low power dissipation as compared to the cooling power of refrigerator.« less

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

NASA Technical Reports Server (NTRS)

Masselink, W. T.; Ketterson, A.; Klem, J.; Kopp, W.; Morkoc, H.

1985-01-01

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier.

PubMed

Klehr, A; Wenzel, H; Fricke, J; Bugge, F; Erbert, G

2014-10-06

We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the nanoseconds range as required by many applications. The MOPA consists of a distributed Bragg reflector (DBR) laser as master oscillator driven by a constant current and a ridge waveguide power amplifier (PA) which can be driven by a constant current (DC) or by rectangular current pulses with a width of 5 ns at a repetition frequency of 200 kHz. Under pulsed operation the amplifier acts as an optical gate, converting the CW input beam emitted by the DBR laser into a train of short amplified optical pulses. With this experimental MOPA arrangement no relaxation oscillations occur. A continuous wave power of 1 W under DC injection and a pulse power of 4 W under pulsed operation are reached. For both operational modes the optical spectrum of the emission of the amplifier exhibits a peak at a constant wavelength of 973.5 nm with a spectral width < 10 pm.

A 300MHz Embedded Flash Memory with Pipeline Architecture and Offset-Free Sense Amplifiers for Dual-Core Automotive Microcontrollers

NASA Astrophysics Data System (ADS)

Kajiyama, Shinya; Fujito, Masamichi; Kasai, Hideo; Mizuno, Makoto; Yamaguchi, Takanori; Shinagawa, Yutaka

A novel 300MHz embedded flash memory for dual-core microcontrollers with a shared ROM architecture is proposed. One of its features is a three-stage pipeline read operation, which enables reduced access pitch and therefore reduces performance penalty due to conflict of shared ROM accesses. Another feature is a highly sensitive sense amplifier that achieves efficient pipeline operation with two-cycle latency one-cycle pitch as a result of a shortened sense time of 0.63ns. The combination of the pipeline architecture and proposed sense amplifiers significantly reduces access-conflict penalties with shared ROM and enhances performance of 32-bit RISC dual-core microcontrollers by 30%.

Investigation of pump-to-seed beam matching on output features of Rb and Cs vapor laser amplifiers

NASA Astrophysics Data System (ADS)

Shen, Binglin; Huang, Jinghua; Xu, Xingqi; Xia, Chunsheng; Pan, Bailiang

2018-05-01

Taking into account the beam radii of pump light and seed laser along the entire length of the cell and their intensities in the cross section, a physical model with ordinary differential equation methods for alkali vapor amplifiers is established. Applied to the reported optically pumped Rb and diode-pumped Cs vapor amplifiers, the model shows good agreement between the calculated and measured dependence of amplified power on the seed power. A larger width of the spontaneous emission region as compared to the widths of pump absorption and laser emission regions, which will result in very high energy losses, is observed in the cell. Influence of pump and seed beam waists on output performance is calculated, showing that the pump and seed beam should match each other not only in shape but also in size, thus an optimal combination of beam radii is very important for efficient operation of alkali vapor amplifiers.

Valency-Controlled Framework Nucleic Acid Signal Amplifiers.

PubMed

Liu, Qi; Ge, Zhilei; Mao, Xiuhai; Zhou, Guobao; Zuo, Xiaolei; Shen, Juwen; Shi, Jiye; Li, Jiang; Wang, Lihua; Chen, Xiaoqing; Fan, Chunhai

2018-06-11

Weak ligand-receptor recognition events are often amplified by recruiting multiple regulatory biomolecules to the action site in biological systems. However, signal amplification in in vitro biomimetic systems generally lack the spatiotemporal regulation in vivo. Herein we report a framework nucleic acid (FNA)-programmed strategy to develop valence-controlled signal amplifiers with high modularity for ultrasensitive biosensing. We demonstrated that the FNA-programmed signal amplifiers could recruit nucleic acids, proteins, and inorganic nanoparticles in a stoichiometric manner. The valence-controlled signal amplifier enhanced the quantification ability of electrochemical biosensors, and enabled ultrasensitive detection of tumor-relevant circulating free DNA (cfDNA) with sensitivity enhancement of 3-5 orders of magnitude and improved dynamic range. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

E-band Nd 3+ amplifier based on wavelength selection in an all-solid micro-structured fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dawson, Jay W.; Kiani, Leily S.; Pax, Paul H.

Here, a Nd 3+ fiber amplifier with gain from 1376 nm to 1466 nm is demonstrated. This is enabled by a wavelength selective waveguide that suppresses amplified spontaneous emission between 850 nm and 1150 nm. It is shown that while excited state absorption (ESA) precludes net gain below 1375 nm with the exception of a small band from 1333 nm to 1350 nm, ESA diminishes steadily beyond 1375 nm allowing for the construction of an efficient fiber amplifier with a gain peak at 1400 nm and the potential for gain from 1375 nm to 1500 nm. A peak small signalmore » gain of 13.3 dB is measured at 1402 nm with a noise figure of 7.6 dB. Detailed measurements of the Nd 3+ emission and excited state absorption cross sections suggest the potential for better performance in improved fibers. Specifically, reduction of the fiber mode field diameter from 10.5 µm to 5.25 µm and reduction of the fiber background loss to <10 dB/km at 1400 nm should enable construction of an E-band fiber amplifier with a noise figure < 5 dB and a small signal gain > 20 dB over 30 nm of bandwidth. Such an amplifier would have a form factor and optical properties similar to current erbium fiber amplifiers, enabling modern fiber optic communication systems to operate in the E-band with amplifier technology similar to that employed in the C and L bands.« less

E-band Nd 3+ amplifier based on wavelength selection in an all-solid micro-structured fiber

DOE PAGES

Dawson, Jay W.; Kiani, Leily S.; Pax, Paul H.; ...

2017-03-13

Here, a Nd 3+ fiber amplifier with gain from 1376 nm to 1466 nm is demonstrated. This is enabled by a wavelength selective waveguide that suppresses amplified spontaneous emission between 850 nm and 1150 nm. It is shown that while excited state absorption (ESA) precludes net gain below 1375 nm with the exception of a small band from 1333 nm to 1350 nm, ESA diminishes steadily beyond 1375 nm allowing for the construction of an efficient fiber amplifier with a gain peak at 1400 nm and the potential for gain from 1375 nm to 1500 nm. A peak small signalmore » gain of 13.3 dB is measured at 1402 nm with a noise figure of 7.6 dB. Detailed measurements of the Nd 3+ emission and excited state absorption cross sections suggest the potential for better performance in improved fibers. Specifically, reduction of the fiber mode field diameter from 10.5 µm to 5.25 µm and reduction of the fiber background loss to <10 dB/km at 1400 nm should enable construction of an E-band fiber amplifier with a noise figure < 5 dB and a small signal gain > 20 dB over 30 nm of bandwidth. Such an amplifier would have a form factor and optical properties similar to current erbium fiber amplifiers, enabling modern fiber optic communication systems to operate in the E-band with amplifier technology similar to that employed in the C and L bands.« less

Transverse pumped laser amplifier architecture

DOEpatents

Bayramian, Andrew James; Manes, Kenneth R.; Deri, Robert; Erlandson, Alvin; Caird, John; Spaeth, Mary L.

2015-05-19

An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Transverse pumped laser amplifier architecture

DOEpatents

Bayramian, Andrew James; Manes, Kenneth; Deri, Robert; Erlandson, Al; Caird, John; Spaeth, Mary

2013-07-09

An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Wide bandwidth transimpedance amplifier for extremely high sensitivity continuous measurements.

PubMed

Ferrari, Giorgio; Sampietro, Marco

2007-09-01

This article presents a wide bandwidth transimpedance amplifier based on the series of an integrator and a differentiator stage, having an additional feedback loop to discharge the standing current from the device under test (DUT) to ensure an unlimited measuring time opportunity when compared to switched discharge configurations while maintaining a large signal amplification over the full bandwidth. The amplifier shows a flat response from 0.6 Hz to 1.4 MHz, the capability to operate with leakage currents from the DUT as high as tens of nanoamperes, and rail-to-rail dynamic range for sinusoidal current signals independent of the DUT leakage current. Also available is a monitor output of the stationary current to track experimental slow drifts. The circuit is ideal for noise spectral and impedance measurements of nanodevices and biomolecules when in the presence of a physiological medium and in all cases where high sensitivity current measurements are requested such as in scanning probe microscopy systems.

Integrated amplifying nanowire FET for surface and bulk sensing

NASA Astrophysics Data System (ADS)

Chui, Chi On; Shin, Kyeong-Sik

2011-10-01

For over one decade, numerous research have been performed on field-effect transistor (FET) sensors with a quasi-onedimensional (1D) nanostructure channel demonstrating highly sensitive surface and bulk sensing. The high surface and bulk sensing sensitivity respectively arises from the inherently large surface area-to-volume ratio and tiny channel volume. The generic nanowire FET sensors, however, have limitations such as impractically low output current levels especially near the limit of detection (LOD) that would require downstream remote amplification with an appreciable amount of added noise. We have recently proposed and experimentally demonstrated an innovative amplifying nanowire FET sensor structure that seamlessly integrates therein a sensing nanowire and a nanowire FET amplifier. This novel sensor structure embraces the same geometrical advantage in quasi-1D nanostructure yet it offers unprecedented closeproximity signal amplification with the lowest possible added noise. In this paper, we review the device operating principle and amplification mechanism. We also present the prototype fabrication procedures, and surface and bulk sensing experimental results showing significantly enhanced output current level difference as predicted.

Differential transimpedance amplifier circuit for correlated differential amplification

DOEpatents