Design of all-optical memory cell using EIT and lasing without inversion phenomena in optical micro ring resonators

NASA Astrophysics Data System (ADS)

Pasyar, N.; Yadipour, R.; Baghban, H.

2017-07-01

The proposed design of the optical memory unit cell contains dual micro ring resonators in which the effect of lasing without inversion (LWI) in three-level nano particles doped over the optical resonators or integrators as the gain segment is used for loss compensation. Also, an on/off phase shifter based on electromagnetically induced transparency (EIT) in three-level quantum dots (QDs) has been used for data reading at requested time. Device minimizing for integrated purposes and high speed data storage are the main advantages of the optical integrator based memory.

Trinary flip-flops using Savart plate and spatial light modulator for optical computation in multivalued logic

NASA Astrophysics Data System (ADS)

Ghosh, Amal K.; Basuray, Amitabha

2008-11-01

The memory devices in multi-valued logic are of most significance in modern research. This paper deals with the implementation of basic memory devices in multi-valued logic using Savart plate and spatial light modulator (SLM) based optoelectronic circuits. Photons are used here as the carrier to speed up the operations. Optical tree architecture (OTA) has been also utilized in the optical interconnection network. We have exploited the advantages of Savart plates, SLMs and OTA and proposed the SLM based high speed JK, D-type and T-type flip-flops in a trinary system.

Coherent optical pulse sequencer for quantum applications.

PubMed

Hosseini, Mahdi; Sparkes, Ben M; Hétet, Gabriel; Longdell, Jevon J; Lam, Ping Koy; Buchler, Ben C

2009-09-10

The bandwidth and versatility of optical devices have revolutionized information technology systems and communication networks. Precise and arbitrary control of an optical field that preserves optical coherence is an important requisite for many proposed photonic technologies. For quantum information applications, a device that allows storage and on-demand retrieval of arbitrary quantum states of light would form an ideal quantum optical memory. Recently, significant progress has been made in implementing atomic quantum memories using electromagnetically induced transparency, photon echo spectroscopy, off-resonance Raman spectroscopy and other atom-light interaction processes. Single-photon and bright-optical-field storage with quantum states have both been successfully demonstrated. Here we present a coherent optical memory based on photon echoes induced through controlled reversible inhomogeneous broadening. Our scheme allows storage of multiple pulses of light within a chosen frequency bandwidth, and stored pulses can be recalled in arbitrary order with any chosen delay between each recalled pulse. Furthermore, pulses can be time-compressed, time-stretched or split into multiple smaller pulses and recalled in several pieces at chosen times. Although our experimental results are so far limited to classical light pulses, our technique should enable the construction of an optical random-access memory for time-bin quantum information, and have potential applications in quantum information processing.

Nanophotonic rare-earth quantum memory with optically controlled retrieval

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan M.; Bartholomew, John G.; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D.; Beyer, Andrew D.; Faraon, Andrei

2017-09-01

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes.

Resonator memories and optical novelty filters

NASA Astrophysics Data System (ADS)

Anderson, Dana Z.; Erle, Marie C.

Optical resonators having holographic elements are potential candidates for storing information that can be accessed through content addressable or associative recall. Closely related to the resonator memory is the optical novelty filter, which can detect the differences between a test object and a set of reference objects. We discuss implementations of these devices using continuous optical media such as photorefractive materials. The discussion is framed in the context of neural network models. There are both formal and qualitative similarities between the resonator memory and optical novelty filter and network models. Mode competition arises in the theory of the resonator memory, much as it does in some network models. We show that the role of the phenomena of "daydreaming" in the real-time programmable optical resonator is very much akin to the role of "unlearning" in neural network memories. The theory of programming the real-time memory for a single mode is given in detail. This leads to a discussion of the optical novelty filter. Experimental results for the resonator memory, the real-time programmable memory, and the optical tracking novelty filter are reviewed. We also point to several issues that need to be addressed in order to implement more formal models of neural networks.

Resonator Memories And Optical Novelty Filters

NASA Astrophysics Data System (ADS)

Anderson, Dana Z.; Erie, Marie C.

1987-05-01

Optical resonators having holographic elements are potential candidates for storing information that can be accessed through content-addressable or associative recall. Closely related to the resonator memory is the optical novelty filter, which can detect the differences between a test object and a set of reference objects. We discuss implementations of these devices using continuous optical media such as photorefractive ma-terials. The discussion is framed in the context of neural network models. There are both formal and qualitative similarities between the resonator memory and optical novelty filter and network models. Mode competition arises in the theory of the resonator memory, much as it does in some network models. We show that the role of the phenomena of "daydream-ing" in the real-time programmable optical resonator is very much akin to the role of "unlearning" in neural network memories. The theory of programming the real-time memory for a single mode is given in detail. This leads to a discussion of the optical novelty filter. Experimental results for the resonator memory, the real-time programmable memory, and the optical tracking novelty filter are reviewed. We also point to several issues that need to be addressed in order to implement more formal models of neural networks.

Synthetic-lattice enabled all-optical devices based on orbital angular momentum of light.

PubMed

Luo, Xi-Wang; Zhou, Xingxiang; Xu, Jin-Shi; Li, Chuan-Feng; Guo, Guang-Can; Zhang, Chuanwei; Zhou, Zheng-Wei

2017-07-14

All-optical photonic devices are crucial for many important photonic technologies and applications, ranging from optical communication to quantum information processing. Conventional design of all-optical devices is based on photon propagation and interference in real space, which may rely on large numbers of optical elements, and the requirement of precise control makes this approach challenging. Here we propose an unconventional route for engineering all-optical devices using the photon's internal degrees of freedom, which form photonic crystals in such synthetic dimensions for photon propagation and interference. We demonstrate this design concept by showing how important optical devices such as quantum memory and optical filters can be realized using synthetic orbital angular momentum (OAM) lattices in degenerate cavities. The design route utilizing synthetic photonic lattices may significantly reduce the requirement for numerous optical elements and their fine tuning in conventional design, paving the way for realistic all-optical photonic devices with novel functionalities.

High-speed noise-free optical quantum memory

NASA Astrophysics Data System (ADS)

Kaczmarek, K. T.; Ledingham, P. M.; Brecht, B.; Thomas, S. E.; Thekkadath, G. S.; Lazo-Arjona, O.; Munns, J. H. D.; Poem, E.; Feizpour, A.; Saunders, D. J.; Nunn, J.; Walmsley, I. A.

2018-04-01

Optical quantum memories are devices that store and recall quantum light and are vital to the realization of future photonic quantum networks. To date, much effort has been put into improving storage times and efficiencies of such devices to enable long-distance communications. However, less attention has been devoted to building quantum memories which add zero noise to the output. Even small additional noise can render the memory classical by destroying the fragile quantum signatures of the stored light. Therefore, noise performance is a critical parameter for all quantum memories. Here we introduce an intrinsically noise-free quantum memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We demonstrate successful storage of GHz-bandwidth heralded single photons in a warm atomic vapor with no added noise, confirmed by the unaltered photon-number statistics upon recall. Our ORCA memory meets the stringent noise requirements for quantum memories while combining high-speed and room-temperature operation with technical simplicity, and therefore is immediately applicable to low-latency quantum networks.

Memory technology survey

NASA Technical Reports Server (NTRS)

1981-01-01

The current status of semiconductor, magnetic, and optical memory technologies is described. Projections based on these research activities planned for the shot term are presented. Conceptual designs of specific memory buffer pplications employing bipola, CMOS, GaAs, and Magnetic Bubble devices are discussed.

Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lewis M.

2008-01-01

At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

A fast low-power optical memory based on coupled micro-ring lasers

NASA Astrophysics Data System (ADS)

Hill, Martin T.; Dorren, Harmen J. S.; de Vries, Tjibbe; Leijtens, Xaveer J. M.; den Besten, Jan Hendrik; Smalbrugge, Barry; Oei, Yok-Siang; Binsma, Hans; Khoe, Giok-Djan; Smit, Meint K.

2004-11-01

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20ps with 5.5fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

Synthetic-lattice enabled all-optical devices based on orbital angular momentum of light

PubMed Central

Luo, Xi-Wang; Zhou, Xingxiang; Xu, Jin-Shi; Li, Chuan-Feng; Guo, Guang-Can; Zhang, Chuanwei; Zhou, Zheng-Wei

2017-01-01

All-optical photonic devices are crucial for many important photonic technologies and applications, ranging from optical communication to quantum information processing. Conventional design of all-optical devices is based on photon propagation and interference in real space, which may rely on large numbers of optical elements, and the requirement of precise control makes this approach challenging. Here we propose an unconventional route for engineering all-optical devices using the photon’s internal degrees of freedom, which form photonic crystals in such synthetic dimensions for photon propagation and interference. We demonstrate this design concept by showing how important optical devices such as quantum memory and optical filters can be realized using synthetic orbital angular momentum (OAM) lattices in degenerate cavities. The design route utilizing synthetic photonic lattices may significantly reduce the requirement for numerous optical elements and their fine tuning in conventional design, paving the way for realistic all-optical photonic devices with novel functionalities. PMID:28706215

Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device.

PubMed

Yagati, Ajay Kumar; Lee, Taek; Choi, Jeong-Woo

2017-07-15

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I-V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.

A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

NASA Astrophysics Data System (ADS)

Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

2016-06-01

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

Real-time associative memory with photorefractive crystal KNSBN and liquid-crystal optical switches

NASA Astrophysics Data System (ADS)

Xu, Haiying; Yuan, Yang Y.; Yu, Youlong; Xu, Kebin; Xu, Yuhuan; Zhu, De-Rui

1990-05-01

We present a real-time holographic associative memory implemented with photorefractive KNSBN : Co crystal as memory element and liquid crystal electrooptical switches as reflective thresholding device. The experimental results show that the system has real-time multiple-image storage and recall function.

Multipulse addressing of a Raman quantum memory: configurable beam splitting and efficient readout.

PubMed

Reim, K F; Nunn, J; Jin, X-M; Michelberger, P S; Champion, T F M; England, D G; Lee, K C; Kolthammer, W S; Langford, N K; Walmsley, I A

2012-06-29

Quantum memories are vital to the scalability of photonic quantum information processing (PQIP), since the storage of photons enables repeat-until-success strategies. On the other hand, the key element of all PQIP architectures is the beam splitter, which allows us to coherently couple optical modes. Here, we show how to combine these crucial functionalities by addressing a Raman quantum memory with multiple control pulses. The result is a coherent optical storage device with an extremely large time bandwidth product, that functions as an array of dynamically configurable beam splitters, and that can be read out with arbitrarily high efficiency. Networks of such devices would allow fully scalable PQIP, with applications in quantum computation, long distance quantum communications and quantum metrology.

Quantum memories: emerging applications and recent advances

NASA Astrophysics Data System (ADS)

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-11-01

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances.

PubMed

Heshami, Khabat; England, Duncan G; Humphreys, Peter C; Bustard, Philip J; Acosta, Victor M; Nunn, Joshua; Sussman, Benjamin J

2016-11-12

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances

PubMed Central

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-01-01

Quantum light–matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories. PMID:27695198

Optical memory system technology. Citations from the International Aerospace Abstracts data base

NASA Technical Reports Server (NTRS)

Zollars, G. F.

1980-01-01

Approximately 213 citations from the international literature which concern the development of the optical data storage system technology are presented. Topics covered include holographic computer storage devices, crystal, magneto, and electro-optics, imaging techniques, in addition to optical data processing and storage.

All linear optical quantum memory based on quantum error correction.

PubMed

Gingrich, Robert M; Kok, Pieter; Lee, Hwang; Vatan, Farrokh; Dowling, Jonathan P

2003-11-21

When photons are sent through a fiber as part of a quantum communication protocol, the error that is most difficult to correct is photon loss. Here we propose and analyze a two-to-four qubit encoding scheme, which can recover the loss of one qubit in the transmission. This device acts as a repeater, when it is placed in series to cover a distance larger than the attenuation length of the fiber, and it acts as an optical quantum memory, when it is inserted in a fiber loop. We call this dual-purpose device a "quantum transponder."

Displays, memories, and signal processing: A compilation

NASA Technical Reports Server (NTRS)

1975-01-01

Articles on electronics systems and techniques were presented. The first section is on displays and other electro-optical systems; the second section is devoted to signal processing. The third section presented several new memory devices for digital equipment, including articles on holographic memories. The latest patent information available is also given.

Fast, Capacious Disk Memory Device

NASA Technical Reports Server (NTRS)

Muller, Ronald M.

1990-01-01

Device for recording digital data on, and playing back data from, memory disks has high recording or playback rate and utilizes available recording area more fully. Two disks, each with own reading/writing head, used to record data at same time. Head on disk A operates on one of tracks numbered from outside in; head on disk B operates on track of same number in sequence from inside out. Underlying concept of device applicable to magnetic or optical disks.

An automatic analyzer of solid state nuclear track detectors using an optic RAM as image sensor

NASA Astrophysics Data System (ADS)

Staderini, Enrico Maria; Castellano, Alfredo

1986-02-01

An optic RAM is a conventional digital random access read/write dynamic memory device featuring a quartz windowed package and memory cells regularly ordered on the chip. Such a device is used as an image sensor because each cell retains data stored in it for a time depending on the intensity of the light incident on the cell itself. The authors have developed a system which uses an optic RAM to acquire and digitize images from electrochemically etched CR39 solid state nuclear track detectors (SSNTD) in the track count rate up to 5000 cm -2. On the digital image so obtained, a microprocessor, with appropriate software, performs image analysis, filtering, tracks counting and evaluation.

Fabrication and characterization of cylindrical light diffusers comprised of shape memory polymer.

PubMed

Small, Ward; Buckley, Patrick R; Wilson, Thomas S; Loge, Jeffrey M; Maitland, Kristen D; Maitland, Duncan J

2008-01-01

We developed a technique for constructing light diffusing devices comprised of a flexible shape memory polymer (SMP) cylindrical diffuser attached to the tip of an optical fiber. The devices are fabricated by casting an SMP rod over the cleaved tip of an optical fiber and media blasting the SMP rod to create a light diffusing surface. The axial and polar emission profiles and circumferential (azimuthal) uniformity are characterized for various blasting pressures, nozzle-to-sample distances, and nozzle translation speeds. The diffusers are generally strongly forward-directed and consistently withstand over 8 W of incident IR laser light without suffering damage when immersed in water. These devices are suitable for various endoluminal and interstitial biomedical applications.

Fabrication and characterization of cylindrical light diffusers comprised of shape memory polymer

PubMed Central

Small, Ward; Buckley, Patrick R.; Wilson, Thomas S.; Loge, Jeffrey M.; Maitland, Kristen D.; Maitland, Duncan J.

2009-01-01

We developed a technique for constructing light diffusing devices comprised of a flexible shape memory polymer (SMP) cylindrical diffuser attached to the tip of an optical fiber. The devices are fabricated by casting an SMP rod over the cleaved tip of an optical fiber and media blasting the SMP rod to create a light diffusing surface. The axial and polar emission profiles and circumferential (azimuthal) uniformity are characterized for various blasting pressures, nozzle-to-sample distances, and nozzle translation speeds. The diffusers are generally strongly forward-directed and consistently withstand over 8 W of incident IR laser light without suffering damage when immersed in water. These devices are suitable for various endoluminal and interstitial biomedical applications. PMID:18465981

Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approach

NASA Astrophysics Data System (ADS)

Bhatnagar, Promod K.; Gupta, Poonam; Singh, Laxman

2001-06-01

Chalcogenide based alloys find applications in a number of devices like optical memories, IR detectors, optical switches, photovoltaics, compound semiconductor heterosrtuctures etc. We have modified the Gurman's statistical thermodynamic model (STM) of binary covalent alloys. In the Gurman's model, entropy calculations are based on the number of structural units present. The need to modify this model arose due to the fact that it gives equal probability for all the tetrahedra present in the alloy. We have modified the Gurman's model by introducing the concept that the entropy is based on the bond arrangement rather than that on the structural units present. In the present work calculation based on this modification have been presented for optical properties, which find application in optical switching/memories, solar cells and other optical devices. It has been shown that the calculated optical parameters (for a typical case of GaxSe1-x) based on modified model are closer to the available experimental results. These parameters include refractive index, extinction coefficient, dielectric functions, optical band gap etc. GaxSe1-x has been found to be suitable for reversible optical memories also, where phase change (a yields c and vice versa) takes place at specified physical conditions. DTA/DSC studies also suggest the suitability of this material for optical switching/memory applications. We have also suggested possible use of GaxSe1-x (x = 0.4) in place of oxide layer in a Metal - Oxide - Semiconductor type solar cells. The new structure is Metal - Ga2Se3 - GaAs. The I-V characteristics and other parameters calculated for this structure are found to be much better than that for Si based solar cells. Maximum output power is obtained at the intermediate layer thickness approximately 40 angstroms for this typical solar cell.

Ultra-High-Density Ferroelectric Memories

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1995-01-01

Features include fast input and output via optical fibers. Memory devices of proposed type include thin ferroelectric films in which data stored in form of electric polarization. Assuming one datum stored in region as small as polarization domain, sizes of such domains impose upper limits on achievable storage densities. Limits approach 1 terabit/cm(Sup2) in all-optical versions of these ferroelectric memories and exceeds 1 gigabit/cm(Sup2) in optoelectronic versions. Memories expected to exhibit operational lives of about 10 years, input/output times of about 10 ns, and fatigue lives of about 10(Sup13) cycles.

Two-dimensional multiferroics in monolayer group IV monochalcogenides

NASA Astrophysics Data System (ADS)

Wang, Hua; Qian, Xiaofeng

2017-03-01

Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that two-dimensional (2D) monolayer group IV monochalcogenides including GeS, GeSe, SnS, and SnSe are a class of 2D semiconducting multiferroics with giant strongly-coupled in-plane spontaneous ferroelectric polarization and spontaneous ferroelastic lattice strain that are thermodynamically stable at room temperature and beyond, and can be effectively modulated by elastic strain engineering. Their optical absorption spectra exhibit strong in-plane anisotropy with visible-spectrum excitonic gaps and sizable exciton binding energies, rendering the unique characteristics of low-dimensional semiconductors. More importantly, the predicted low domain wall energy and small migration barrier together with the coupled multiferroic order and anisotropic electronic structures suggest their great potentials for tunable multiferroic functional devices by manipulating external electrical, mechanical, and optical field to control the internal responses, and enable the development of four device concepts including 2D ferroelectric memory, 2D ferroelastic memory, and 2D ferroelastoelectric nonvolatile photonic memory as well as 2D ferroelectric excitonic photovoltaics.

Device applications and structural and optical properties of Indigo - A biodegradable, low-cost organic semiconductor

NASA Astrophysics Data System (ADS)

Wang, Zhengjun; Pisane, Kelly L.; Sierros, Konstantinos; Seehra, Mohindar S.; Korakakis, Dimitris

2015-03-01

Currently, memory devices based on organic materials are attracting great attention due to their simplicity in device structure, mechanical flexibility, potential for scalability, low-cost potential, low-power operation, and large capacity for data storage. In a recent paper from our group, Indigo-based nonvolatile organic write-once-read-many-times (WORM) memory device, consisting of a 100nm layer of indigo sandwiched between an indium tin oxide (ITO) cathode and an Al anode, has been reported. This device is found to be at its low resistance state (ON state) and can be switched to high resistance state (OFF state) by applying a positive bias with ON/OFF current ratio of the device being up to 1.02 × e6. A summary of these results along with the structural and optical properties of indigo powder will be reported. Analysis of x-ray diffraction shows a monoclinic structure with lattice parameters a(b)[c] = 0.924(0.577)[0.1222]nm and β =117° . Optical absorption shows a band edge at 1.70 eV with peak of absorption occurring at 1.90 eV. These results will be interpreted in terms of the HOMO-LUMO bands of Indigo.

Shape memory polymeric composites sensing by optic fibre Bragg gratings: A very first approach

NASA Astrophysics Data System (ADS)

Quadrini, Fabrizio; Santo, Loredana; Ciminello, Monica; Concilio, Antonio; Volponi, Ruggero; Spena, Paola

2016-05-01

Shape memory polymer composites (SMPCs) have the potential for many applications in aerospace, spanning from self-repairing of structures to self-deploying of antennas, solar sails, or functional devices (e.g. for grabbing small space debris). In all these cases, it may be essential to have information about their configuration at different stages of shape recovery. In this study, the strain history of a prepreg carbon fibre system, cured with a shape memory polymer (SMP) interlayer, is monitored through a Fibre Bragg Grating (FBG), a fibre optic sensor device. SMPC has been manufactured by using traditional technologies for aerospace. After manufacturing cylindrical shape samples, an external fibre optic system is added to the composite structure; this system is especially suited for high temperatures which are necessary for SMP recovery and composite softening. Sensor functionality is checked before and after each strain history path. Optic fibre arrangement is optimized to avoid unwanted breakings whereas strains are limited by fibre collapsing, i.e. within nominal 2% of deformation. Dynamic information about shape recovery gives fundamental insights about strain evolution during time as well as its spatial distribution.

Nanophotonic rare-earth quantum memory with optically controlled retrieval.

PubMed

Zhong, Tian; Kindem, Jonathan M; Bartholomew, John G; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D; Beyer, Andrew D; Faraon, Andrei

2017-09-29

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Protection of data carriers using secure optical codes

NASA Astrophysics Data System (ADS)

Peters, John A.; Schilling, Andreas; Staub, René; Tompkin, Wayne R.

2006-02-01

Smartcard technologies, combined with biometric-enabled access control systems, are required for many high-security government ID card programs. However, recent field trials with some of the most secure biometric systems have indicated that smartcards are still vulnerable to well equipped and highly motivated counterfeiters. In this paper, we present the Kinegram Secure Memory Technology which not only provides a first-level visual verification procedure, but also reinforces the existing chip-based security measures. This security concept involves the use of securely-coded data (stored in an optically variable device) which communicates with the encoded hashed information stored in the chip memory via a smartcard reader device.

Focused Logistics, Joint Vision 2010: A Joint Logistics Roadmap

DTIC Science & Technology

2010-01-01

AIS). AIT devices include bar codes for individual items, optical memory cards for multipacks and containers, radio frequency tags for containers and...Fortezza Card and Firewall technologies are being developed to prevent unau- thorized access. As for infrastructure, DISA has already made significant in...radio frequency tags and optical memory cards , to continuously update the JTAV database. By September 1998, DSS will be deployed in all wholesale

Light-Gated Memristor with Integrated Logic and Memory Functions.

PubMed

Tan, Hongwei; Liu, Gang; Yang, Huali; Yi, Xiaohui; Pan, Liang; Shang, Jie; Long, Shibing; Liu, Ming; Wu, Yihong; Li, Run-Wei

2017-11-28

Memristive devices are able to store and process information, which offers several key advantages over the transistor-based architectures. However, most of the two-terminal memristive devices have fixed functions once made and cannot be reconfigured for other situations. Here, we propose and demonstrate a memristive device "memlogic" (memory logic) as a nonvolatile switch of logic operations integrated with memory function in a single light-gated memristor. Based on nonvolatile light-modulated memristive switching behavior, a single memlogic cell is able to achieve optical and electrical mixed basic Boolean logic of reconfigurable "AND", "OR", and "NOT" operations. Furthermore, the single memlogic cell is also capable of functioning as an optical adder and digital-to-analog converter. All the memlogic outputs are memristive for in situ data storage due to the nonvolatile resistive switching and persistent photoconductivity effects. Thus, as a memdevice, the memlogic has potential for not only simplifying the programmable logic circuits but also building memristive multifunctional optoelectronics.

Carbon nanomaterials for non-volatile memories

NASA Astrophysics Data System (ADS)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter.

PubMed

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-09

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter

PubMed Central

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-01-01

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics. PMID:28276500

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter

NASA Astrophysics Data System (ADS)

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-01

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Novel shape memory alloy optical fibre connection method

NASA Astrophysics Data System (ADS)

Trouillard, G.; Zivojinovic, P.; Cerutti, R.; Godmaire, X. Pruneau; Weynant, E.

2010-02-01

In this paper, the capacity and quality of a shape memory alloy device is demonstrated for installation and connection of 125-μm to 1000-μm optical fibres. The new mechanical splice has the particularity of using a very simple tool for aligning and holding the cladding of fibres itself without the need of glue. Optimend main characteristics are its small dimensions (few millimetres), reusability, glueless, ruggedness, low temperature variation, heat dissipation and ease of use. These properties are very suitable for many optical fibre applications where both quick and reliable connections are desirable.

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

NASA Astrophysics Data System (ADS)

Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

2013-08-01

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

Rare-Earth Ions in Niobium-Based Devices as a Quantum Memory: Magneto-Optical Effects on Room Temperature Electrical Transport

DTIC Science & Technology

2016-09-01

rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process...the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect...thin films of niobium. Simulations are made at low 1013 cm-2 and high 1014 cm-2 dose at 60 keV. At high dose, disorder induced is significantly

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

PubMed

Kim, Kang Lib; Lee, Wonho; Hwang, Sun Kak; Joo, Se Hun; Cho, Suk Man; Song, Giyoung; Cho, Sung Hwan; Jeong, Beomjin; Hwang, Ihn; Ahn, Jong-Hyun; Yu, Young-Jun; Shin, Tae Joo; Kwak, Sang Kyu; Kang, Seok Ju; Park, Cheolmin

2016-01-13

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Optical bistability for optical signal processing and computing

NASA Astrophysics Data System (ADS)

Peyghambarian, N.; Gibbs, H. M.

1985-02-01

Optical bistability (OB) is a phenomenon in which a nonlinear medium responds to an optical input beam by changing its transmission abruptly from one value to another. A 'nonlinear medium' is a medium in which the index of refraction depends on the incident light intensity. A device is said to be optically bistable if two stable output states exist for the same value of the input. Optically bistable devices can perform a number of logic functions related to optical memory, optical transistor, optical discriminator, optical limiter, optical oscillator, and optical gate. They also have the potential for subpicosecond switching, greatly exceeding the capability of electronics. This potential is one of several advantages of optical data processing over electronic processing. Other advantages are greater immunity to electromagnetic interference and crosstalk, and highly parallel processing capability. The present investigation is mainly concerned with all-optical etalon devices. The considered materials, include GaAs, ZnS and ZnSe, CuCl, InSb, InAs, and CdS.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

PubMed

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Data storage technology comparisons

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1990-01-01

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

DataPlay's mobile recording technology

NASA Astrophysics Data System (ADS)

Bell, Bernard W., Jr.

2002-01-01

A small rotating memory device which utilizes optical prerecorded and writeable technology to provide a mobile recording technology solution for digital cameras, cell phones, music players, PDA's, and hybrid multipurpose devices have been developed. This solution encompasses writeable, read only, and encrypted storage media.

Active holographic interconnects for interfacing volume storage

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Schwartz, Jay R.; Nelson, Arthur R.; Levin, Philip S.

1992-04-01

In order to achieve the promise of terabit/cm3 data storage capacity for volume holographic optical memory, two technological challenges must be met. Satisfactory storage materials must be developed and the input/output architectures able to match their capacity with corresponding data access rates must also be designed. To date the materials problem has received more attention than devices and architectures for access and addressing. Two philosophies of parallel data access to 3-D storage have been discussed. The bit-oriented approach, represented by recent work on two-photon memories, attempts to store bits at local sites within a volume without affecting neighboring bits. High speed acousto-optic or electro- optic scanners together with dynamically focused lenses not presently available would be required. The second philosophy is that volume optical storage is essentially holographic in nature, and that each data write or read is to be distributed throughout the material volume on the basis of angle multiplexing or other schemes consistent with the principles of holography. The requirements for free space optical interconnects for digital computers and fiber optic network switching interfaces are also closely related to this class of devices. Interconnects, beamlet generators, angle multiplexers, scanners, fiber optic switches, and dynamic lenses are all devices which may be implemented by holographic or microdiffractive devices of various kinds, which we shall refer to collectively as holographic interconnect devices. At present, holographic interconnect devices are either fixed holograms or spatial light modulators. Optically or computer generated holograms (submicron resolution, 2-D or 3-D, encoding 1013 bits, nearly 100 diffraction efficiency) can implement sophisticated mathematical design principles, but of course once fabricated they cannot be changed. Spatial light modulators offer high speed programmability but have limited resolution (512 X 512 pixels, encoding about 106 bits of data) and limited diffraction efficiency. For any application, one must choose between high diffractive performance and programmability.

Molecular implementation of molecular shift register memories

NASA Technical Reports Server (NTRS)

Beratan, David N. (Inventor); Onuchic, Jose N. (Inventor)

1991-01-01

An electronic shift register memory (20) at the molecular level is described. The memory elements are based on a chain of electron transfer molecules (22) and the information is shifted by photoinduced (26) electron transfer reactions. Thus, multi-step sequences of charge transfer reactions are used to move charge with high efficiency down a molecular chain. The device integrates compositions of the invention onto a VLSI substrate (36), providing an example of a molecular electronic device which may be fabricated. Three energy level schemes, molecular implementation of these schemes, optical excitation strategies, charge amplification strategies, and error correction strategies are described.

Robotic Vision, Tray-Picking System Design Using Multiple, Optical Matched Filters

NASA Astrophysics Data System (ADS)

Leib, Kenneth G.; Mendelsohn, Jay C.; Grieve, Philip G.

1986-10-01

The optical correlator is applied to a robotic vision, tray-picking problem. Complex matched filters (MFs) are designed to provide sufficient optical memory for accepting any orientation of the desired part, and a multiple holographic lens (MHL) is used to increase the memory for continuous coverage. It is shown that with appropriate thresholding a small part can be selected using optical matched filters. A number of criteria are presented for optimizing the vision system. Two of the part-filled trays that Mendelsohn used are considered in this paper which is the analog (optical) expansion of his paper. Our view in this paper is that of the optical correlator as a cueing device for subsequent, finer vision techniques.

Acoustical holographic recording with coherent optical read-out and image processing

NASA Astrophysics Data System (ADS)

Liu, H. K.

1980-10-01

New acoustic holographic wave memory devices have been designed for real-time in-situ recording applications. The basic operating principles of these devices and experimental results through the use of some of the prototypes of the devices are presented. Recording media used in the device include thermoplastic resin, Crisco vegetable oil, and Wilson corn oil. In addition, nonlinear coherent optical image processing techniques including equidensitometry, A-D conversion, and pseudo-color, all based on the new contact screen technique, are discussed with regard to the enhancement of the normally poor-resolved acoustical holographic images.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

PubMed

Qian, Kai; Cai, Guofa; Nguyen, Viet Cuong; Chen, Tupei; Lee, Pooi See

2016-10-05

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO 3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 4 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

A polymer/semiconductor write-once read-many-times memory

NASA Astrophysics Data System (ADS)

Möller, Sven; Perlov, Craig; Jackson, Warren; Taussig, Carl; Forrest, Stephen R.

2003-11-01

Organic devices promise to revolutionize the extent of, and access to, electronics by providing extremely inexpensive, lightweight and capable ubiquitous components that are printed onto plastic, glass or metal foils. One key component of an electronic circuit that has thus far received surprisingly little attention is an organic electronic memory. Here we report an architecture for a write-once read-many-times (WORM) memory, based on the hybrid integration of an electrochromic polymer with a thin-film silicon diode deposited onto a flexible metal foil substrate. WORM memories are desirable for ultralow-cost permanent storage of digital images, eliminating the need for slow, bulky and expensive mechanical drives used in conventional magnetic and optical memories. Our results indicate that the hybrid organic/inorganic memory device is a reliable means for achieving rapid, large-scale archival data storage. The WORM memory pixel exploits a mechanism of current-controlled, thermally activated un-doping of a two-component electrochromic conducting polymer.

Digital Holographic Memories

NASA Astrophysics Data System (ADS)

Hesselink, Lambertus; Orlov, Sergei S.

Optical data storage is a phenomenal success story. Since its introduction in the early 1980s, optical data storage devices have evolved from being focused primarily on music distribution, to becoming the prevailing data distribution and recording medium. Each year, billions of optical recordable and prerecorded disks are sold worldwide. Almost every computer today is shipped with a CD or DVD drive installed.

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Electro-Optic Properties of Holographically Patterned, Polymer Stabilized Cholesteric Liquid Crystals (Preprint)

DTIC Science & Technology

2007-01-01

Electro - optic properties of cholesteric liquid crystals with holographically patterned polymer stabilization were examined. It is hypothesized that...enhanced electro - optic properties of the final device. Prior to holographic patterning, polymer stabilization with large elastic memory was generated by way... electro - optic properties appear to stem from a single dimension domain size increase, which allows for a reduction in the LC/polymer interaction.

Optical backplane interconnect switch for data processors and computers

NASA Technical Reports Server (NTRS)

Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

1989-01-01

An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

Optical resonators and neural networks

NASA Astrophysics Data System (ADS)

Anderson, Dana Z.

1986-08-01

It may be possible to implement neural network models using continuous field optical architectures. These devices offer the inherent parallelism of propagating waves and an information density in principle dictated by the wavelength of light and the quality of the bulk optical elements. Few components are needed to construct a relatively large equivalent network. Various associative memories based on optical resonators have been demonstrated in the literature, a ring resonator design is discussed in detail here. Information is stored in a holographic medium and recalled through a competitive processes in the gain medium supplying energy to the ring rsonator. The resonator memory is the first realized example of a neural network function implemented with this kind of architecture.

Invited Paper Optical Resonators For Associative Memory

NASA Astrophysics Data System (ADS)

Anderson, Dana Z.

1986-06-01

One can construct a memory having associative characteristics using optical resonators with an internal gain medium. The device operates on the principle that an optical resonator employing a holographic grating can have user prescribed eigenmodes. Information that is to be recalled is contained in the hologram. Each information entity (e.g. an image of a cat) defines an eigenmode of the resonator. The stored information is accessed by injecting partial information (e.g. an image of the cat's ear) into the resonator. The appropriate eigenmode is selected through a competitive process in a gain medium placed inside the resonator. With a net gain greater than one, the gain amplifies the field belonging to the eigenmode that most resembles the injected field; the other eigenmodes are suppressed via the competition for the gain. One can expect this device to display several intriguing features such as recall transitions and creativity. I will discuss some of the general properties of this class of devices and present the results from a series of experiments with a simple holographic resonator employing photorefractive gain.

Performance of Integrated Fiber Optic, Piezoelectric, and Shape Memory Alloy Actuators/Sensors in Thermoset Composites

NASA Technical Reports Server (NTRS)

Trottier, C. Michael

1996-01-01

Recently, scientists and engineers have investigated the advantages of smart materials and structures by including actuators in material systems for controlling and altering the response of structural environments. Applications of these materials systems include vibration suppression/isolation, precision positioning, damage detection and tunable devices. Some of the embedded materials being investigated for accomplishing these tasks include piezoelectric ceramics, shape memory alloys, and fiber optics. These materials have some benefits and some shortcomings; each is being studied for use in active material design in the SPICES (Synthesis and Processing of Intelligent Cost Effective Structures) Consortium. The focus of this paper concerns the manufacturing aspects of smart structures by incorporating piezoelectric ceramics, shape memory alloys and fiber optics in a reinforced thermoset matrix via resin transfer molding (RTM).

Scientific developments of liquid crystal-based optical memory: a review

NASA Astrophysics Data System (ADS)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Scientific developments of liquid crystal-based optical memory: a review.

PubMed

Prakash, Jai; Chandran, Achu; Biradar, Ashok M

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Spacecraft optical disk recorder memory buffer control

NASA Technical Reports Server (NTRS)

Hodson, Robert F.

1992-01-01

The goal of this project is to develop an Application Specific Integrated Circuit (ASIC) for use in the control electronics of the Spacecraft Optical Disk Recorder (SODR). Specifically, this project is to design an extendable memory buffer controller ASIC for rate matching between a system Input/Output port and the SODR's device interface. The aforementioned goal can be partitioned into the following sub-goals: (1) completion of ASIC design and simulation (on-going via ASEE fellowship); (2) ASIC Fabrication (at ASIC manufacturer); and (3) ASIC Testing (NASA/LaRC, Christopher Newport University).

Optically readout write once read many memory with single active organic layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Viet Cuong; Lee, Pooi See, E-mail: pslee@ntu.edu.sg

An optically readable write once read many memory (WORM) in Ag/Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH PPV)/ITO is demonstrated in this work. Utilising characteristics of the organic light emitting diode structure of Ag/MEH PPV/ITO and electrochemical metallization of Ag, a WORM with light emitting capability can be realised. The simple fabrication process and multifunction capability of the device can be useful for future wearable optoelectronics and photomemory applications, where fast and parallel readout can be achieved by photons.

Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire

NASA Astrophysics Data System (ADS)

Wang, Xingfu; Zhang, Yong; Chen, Xinman; He, Miao; Liu, Chao; Yin, Yian; Zou, Xianshao; Li, Shuti

2014-09-01

Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage. Electronic supplementary information (ESI) available: Details of the EDS and SAED data, supplementary results of the UV detector, and the discussion of the transport properties of the MSM Schottky contact devices. See DOI: 10.1039/c4nr03581j

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

NASA Astrophysics Data System (ADS)

Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

1991-01-01

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Time-resolved photoluminescence of SiOx encapsulated Si

NASA Astrophysics Data System (ADS)

Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

Electrically and Optically Readable Light Emitting Memories

PubMed Central

Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

2014-01-01

Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. PMID:24894723

Optical Input/Electrical Output Memory Elements based on a Liquid Crystalline Azobenzene Polymer.

PubMed

Mosciatti, Thomas; Bonacchi, Sara; Gobbi, Marco; Ferlauto, Laura; Liscio, Fabiola; Giorgini, Loris; Orgiu, Emanuele; Samorì, Paolo

2016-03-01

Responsive polymer materials can change their properties when subjected to external stimuli. In this work, thin films of thermotropic poly(metha)acrylate/azobenzene polymers are explored as active layer in light-programmable, electrically readable memories. The memory effect is based on the reversible modifications of the film morphology induced by the photoisomerization of azobenzene mesogenic groups. When the film is in the liquid crystalline phase, the trans → cis isomerization induces a major surface reorganization on the mesoscopic scale that is characterized by a reduction in the effective thickness of the film. The film conductivity is measured in vertical two-terminal devices in which the polymer is sandwiched between a Au contact and a liquid compliant E-GaIn drop. We demonstrate that the trans → cis isomerization is accompanied by a reversible 100-fold change in the film conductance. In this way, the device can be set in a high- or low-resistance state by light irradiation at different wavelengths. This result paves the way toward the potential use of poly(metha)acrylate/azobenzene polymer films as active layer for optical input/electrical output memory elements.

Research on Optical Transmitter and Receiver Module Used for High-Speed Interconnection between CPU and Memory

NASA Astrophysics Data System (ADS)

He, Huimin; Liu, Fengman; Li, Baoxia; Xue, Haiyun; Wang, Haidong; Qiu, Delong; Zhou, Yunyan; Cao, Liqiang

2016-11-01

With the development of the multicore processor, the bandwidth and capacity of the memory, rather than the memory area, are the key factors in server performance. At present, however, the new architectures, such as fully buffered DIMM (FBDIMM), hybrid memory cube (HMC), and high bandwidth memory (HBM), cannot be commercially applied in the server. Therefore, a new architecture for the server is proposed. CPU and memory are separated onto different boards, and optical interconnection is used for the communication between them. Each optical module corresponds to each dual inline memory module (DIMM) with 64 channels. Compared to the previous technology, not only can the architecture realize high-capacity and wide-bandwidth memory, it also can reduce power consumption and cost, and be compatible with the existing dynamic random access memory (DRAM). In this article, the proposed module with system-in-package (SiP) integration is demonstrated. In the optical module, the silicon photonic chip is included, which is a promising technology to be applied in the next-generation data exchanging centers. And due to the bandwidth-distance performance of the optical interconnection, SerDes chips are introduced to convert the 64-bit data at 800 Mbps from/to 4-channel data at 12.8 Gbps after/before they are transmitted though optical fiber. All the devices are packaged on cheap organic substrates. To ensure the performance of the whole system, several optimization efforts have been performed on the two modules. High-speed interconnection traces have been designed and simulated with electromagnetic simulation software. Steady-state thermal characteristics of the transceiver module have been evaluated by ANSYS APLD based on finite-element methodology (FEM). Heat sinks are placed at the hotspot area to ensure the reliability of all working chips. Finally, this transceiver system based on silicon photonics is measured, and the eye diagrams of data and clock signals are verified.

Quantum Optical Transistor and Other Devices Based on Nanostructures

NASA Astrophysics Data System (ADS)

Li, Jin-Jin; Zhu, Ka-Di

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to nanostructures. This provides an important clue toward the realization of quantum optical devices, such as quantum optical transistor, slow light device, fast light device, or light storage device. In contrast to conventional electronic transistor, a quantum optical transistor uses photons as signal carriers rather than electrons, which has a faster and more powerful transfer efficiency. Under the radiation of a strong pump laser, a signal laser can be amplified or attenuated via passing through a single quantum dot coupled to a photonic crystal (PC) nanocavity system. Such a switching and amplifying behavior can really implement the quantum optical transistor. By simply turning on or off the input pump laser, the amplified or attenuated signal laser can be obtained immediately. Based on this transistor, we further propose a method to measure the vacuum Rabi splitting of exciton in all-optical domain. Besides, we study the light propagation in a coupled QD and nanomechanical resonator (NR) system. We demonstrate that it is possible to achieve the slow light, fast light, and quantum memory for light on demand, which is based on the mechanically induced coherent population oscillation (MICPO) and exciton polaritons. These QD devices offer a route toward the use of all-optical technique to investigate the coupled QD systems and will make contributions to quantum internets and quantum computers.

Photonic band gap materials: towards an all-optical transistor

NASA Astrophysics Data System (ADS)

Florescu, Marian

2002-05-01

The transmission of information as optical signals encoded on light waves traveling through optical fibers and optical networks is increasingly moving to shorter and shorter distance scales. In the near future, optical networking is poised to supersede conventional transmission over electric wires and electronic networks for computer-to-computer communications, chip-to-chip communications, and even on-chip communications. The ever-increasing demand for faster and more reliable devices to process the optical signals offers new opportunities in developing all-optical signal processing systems (systems in which one optical signal controls another, thereby adding "intelligence" to the optical networks). All-optical switches, two-state and many-state all-optical memories, all-optical limiters, all-optical discriminators and all-optical transistors are only a few of the many devices proposed during the last two decades. The "all-optical" label is commonly used to distinguish the devices that do not involve dissipative electronic transport and require essentially no electrical communication of information. The all-optical transistor action was first observed in the context of optical bistability [1] and consists in a strong differential gain regime, in which, for small variations in the input intensity, the output intensity has a very strong variation. This analog operation is for all-optical input what transistor action is for electrical inputs.

Biologically active nanocomposite of DNA-PbS nanoparticles: A new material for non-volatile memory devices

NASA Astrophysics Data System (ADS)

Murgunde, B. K.; Rabinal, M. K.; Kalasad, M. N.

2018-01-01

Composite films of deoxyribonucleic acid (DNA) and lead sulfide (PbS) nanoparticles are prepared to fabricate biological memory devices. A simple solution based electrografting is developed to deposit large (few cm2) uniform films of DNA:PbS on conducting substrates. The films are studied by X-ray photoelectron spectroscopy, field emission SEM, FTIR and optical spectroscopy to understand their properties. Charge transport measurements are carried out on ITO-DNA:PbS-metal junctions by cyclic voltage scans, electrical bi-stability is observed with ON/OFF ratio more than ∼104 times with good stability and endurance, such performance being rarely reported. The observed results are interpreted in the light of strong electrostatic binding of nanoparticles and DNA stands, which leads doping of Pb atoms into DNA. As a result, these devices exhibit negative differential resistance (NDR) effect due to oxidation of doped metal atoms. These composites can be the potential materials in the development of new generation non-volatile memory devices.

pH Memory Effects of Tunable Block Copolymer Photonic Gels and Their Applications

NASA Astrophysics Data System (ADS)

Kang, Youngjong; Thomas, Edwin L.

2007-03-01

Materials with hysteresis, showing a bistable state to the external stimuli, have been widely investigated due to their potential applications. For example, they could be used as memory devices or optical switches when they have magnetic or optical hysteresis response to the external stimuli. Here we report pH tunable photonic gels which are spontaneously assembled from block copolymers. The general idea of this research is based on the selective swelling of block copolymer lamellar mesogels, where the solubility of one block is responsive to the change of pH. In this system, the domain spacing of the lamellar is varied with the extent of swelling. As a model system, we used protonated polystyrene-b-poly(2-vinly pyridine) (PS-b-P2VP) block copolymers forming lamellar structures. The photonic gel films prepared from protonated PS-b-P2VP show a strong reflectance in aqueous solution and the band position was varied with pH. Interestingly, a very strong optical hysteresis was observed while the reflection band of photonic gels was tuned by changing pH. We anticipate that pH tunable photonic gels with hysteresis can be applicable to novel applications such as a component of memory devices, photonic switches or drug delivery vehicles.

Proceedings of the OGAMM Meeting (3rd) Held in Keswick-On-Derwentwater, Cumbria, England on September 4-7, 1990

DTIC Science & Technology

1990-09-07

and frequency shifting, (4) Investigation of device processes in optical waveguides and fibers; optical bistability for optical memory operation, and...all relative to urea, unless stated otherwise. Compound SHG Colour (1) 0.60 Yellow (2) 0.70 Dark green (3) 0.01 Pale yellow (4) 0.22 Yellow (5) 0.73...LOUGHBOROUGH T. KING UNIVERSITY OF TECHNOLOGY H. Coles N. PHILIPS I - LASER ENCHANCED 1 - OPTICAL & THERMAL DENSIFICATION PROPERTIES 2 - SOLID STATE

Smart photodetector arrays for error control in page-oriented optical memory

NASA Astrophysics Data System (ADS)

Schaffer, Maureen Elizabeth

1998-12-01

Page-oriented optical memories (POMs) have been proposed to meet high speed, high capacity storage requirements for input/output intensive computer applications. This technology offers the capability for storage and retrieval of optical data in two-dimensional pages resulting in high throughput data rates. Since currently measured raw bit error rates for these systems fall several orders of magnitude short of industry requirements for binary data storage, powerful error control codes must be adopted. These codes must be designed to take advantage of the two-dimensional memory output. In addition, POMs require an optoelectronic interface to transfer the optical data pages to one or more electronic host systems. Conventional charge coupled device (CCD) arrays can receive optical data in parallel, but the relatively slow serial electronic output of these devices creates a system bottleneck thereby eliminating the POM advantage of high transfer rates. Also, CCD arrays are "unintelligent" interfaces in that they offer little data processing capabilities. The optical data page can be received by two-dimensional arrays of "smart" photo-detector elements that replace conventional CCD arrays. These smart photodetector arrays (SPAs) can perform fast parallel data decoding and error control, thereby providing an efficient optoelectronic interface between the memory and the electronic computer. This approach optimizes the computer memory system by combining the massive parallelism and high speed of optics with the diverse functionality, low cost, and local interconnection efficiency of electronics. In this dissertation we examine the design of smart photodetector arrays for use as the optoelectronic interface for page-oriented optical memory. We review options and technologies for SPA fabrication, develop SPA requirements, and determine SPA scalability constraints with respect to pixel complexity, electrical power dissipation, and optical power limits. Next, we examine data modulation and error correction coding for the purpose of error control in the POM system. These techniques are adapted, where possible, for 2D data and evaluated as to their suitability for a SPA implementation in terms of BER, code rate, decoder time and pixel complexity. Our analysis shows that differential data modulation combined with relatively simple block codes known as array codes provide a powerful means to achieve the desired data transfer rates while reducing error rates to industry requirements. Finally, we demonstrate the first smart photodetector array designed to perform parallel error correction on an entire page of data and satisfy the sustained data rates of page-oriented optical memories. Our implementation integrates a monolithic PN photodiode array and differential input receiver for optoelectronic signal conversion with a cluster error correction code using 0.35-mum CMOS. This approach provides high sensitivity, low electrical power dissipation, and fast parallel correction of 2 x 2-bit cluster errors in an 8 x 8 bit code block to achieve corrected output data rates scalable to 102 Gbps in the current technology increasing to 1.88 Tbps in 0.1-mum CMOS.

Way for LEEPL technology to succeed in memory device application

NASA Astrophysics Data System (ADS)

Kim, In-Sung; Woo, Sang-Gyun; Cho, Han-Ku; Han, Woo-Sung; Moon, Joo-Tae

2004-05-01

Lithography for 65nm-node device is drawing a lot of attentions these days especially because lithography solution for this node is not clear and even tool makers tend to wait for the consensus in lithography roadmap to avoid the risk of erroneous amount of investment. Recently proposed concept of low energy electron-beam proximity-projection lithography (LEEPL)1,2 technology has already released its first production machine in 2003, which is being expected to cover the design rule down to 65nm-node and even smaller3. Although production of semiconductor device has been pursuing optical lithography, without any optical technology that is proved as a convincing solution for 65nm node and below, we need to take account of all the candidates. So we made an investigation on LEEPL technology and evaluated beta and first production tool to see the feasibility of printing sub-70nm resolution and of optic-first mix-and-match overlay from a chip maker"s point of view. Two different kinds of stencil masks were fabricated for the evaluation, which are fabricated in SiC and Si membrane. The former mask is for sparse contact holes(C/H) and the latter for dense C/Hs. Beta-tool showed a good resolving power of sub-70nm sparse C/Hs of SRAM with negligibly small proximity effect. It implies that LEEPL does not require much effort for proximity correction comparing to that required in optical lithography, which is one of the biggest issues in low-k1. LEEPL also showed a good capability of optic-first mix-and-match overlay correction and this is the most stringent and important functionality for optic-first mix-and-match application. However random intra-membrane image placement(IP) error that is a little bit larger than the requirement for sub-70nm node was observed, which is interpreted to come from the larger stress of 100MPa in 3X3mm2 dry-etched SiC unit membrane. For dense C/Hs, we failed, to the contrary, to obtain any good quality of stencil masks for DRAM cell patterns because of e-beam proximity effect which is unavoidable in the reversed order of front-side forward direct writing and back-side later membrane formation. Pros and cons of LEEPL technology are discussed based on the evaluation results and estimation from the memory device standpoint. We also propose a novel concept of stencil mask that can be helpful in memory device application.

Storage Media for Microcomputers.

ERIC Educational Resources Information Center

Trautman, Rodes

1983-01-01

Reviews computer storage devices designed to provide additional memory for microcomputers--chips, floppy disks, hard disks, optical disks--and describes how secondary storage is used (file transfer, formatting, ingredients of incompatibility); disk/controller/software triplet; magnetic tape backup; storage volatility; disk emulator; and…

Optically programmable electron spin memory using semiconductor quantum dots.

PubMed

Kroutvar, Miro; Ducommun, Yann; Heiss, Dominik; Bichler, Max; Schuh, Dieter; Abstreiter, Gerhard; Finley, Jonathan J

2004-11-04

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.

Holographic Associative Memory System Using A Thresholding Microchannel Spatial Light Modulator

NASA Astrophysics Data System (ADS)

Song, Q. W.; Yu, Francis T.

1989-05-01

Experimental implementation of a holographic optical associative memory system using a thresholding microchannel spatial light modulator (MSLM) is presented. The first part of the system is basically a joint transform correlator, in which a liquid crystal light valve is used as a square-law converter for the inner product of the addressing and input memories. The MSLM is used as an active element to recall the associated data. If the device is properly thresholded, the system is capable of improving the quality of the output image.

Controlling the volatility of the written optical state in electrochromic DNA liquid crystals

NASA Astrophysics Data System (ADS)

Liu, Kai; Varghese, Justin; Gerasimov, Jennifer Y.; Polyakov, Alexey O.; Shuai, Min; Su, Juanjuan; Chen, Dong; Zajaczkowski, Wojciech; Marcozzi, Alessio; Pisula, Wojciech; Noheda, Beatriz; Palstra, Thomas T. M.; Clark, Noel A.; Herrmann, Andreas

2016-05-01

Liquid crystals are widely used in displays for portable electronic information display. To broaden their scope for other applications like smart windows and tags, new material properties such as polarizer-free operation and tunable memory of a written state become important. Here, we describe an anhydrous nanoDNA-surfactant thermotropic liquid crystal system, which exhibits distinctive electrically controlled optical absorption, and temperature-dependent memory. In the liquid crystal isotropic phase, electric field-induced colouration and bleaching have a switching time of seconds. Upon transition to the smectic liquid crystal phase, optical memory of the written state is observed for many hours without applied voltage. The reorientation of the DNA-surfactant lamellar layers plays an important role in preventing colour decay. Thereby, the volatility of optoelectronic state can be controlled simply by changing the phase of the material. This research may pave the way for developing a new generation of DNA-based, phase-modulated, photoelectronic devices.

A highly efficient silole-containing dithienylethene with excellent thermal stability and fatigue resistance: a promising candidate for optical memory storage materials.

PubMed

Chan, Jacky Chi-Hung; Lam, Wai Han; Yam, Vivian Wing-Wah

2014-12-10

Diarylethene compounds are potential candidates for applications in optical memory storage systems and photoswitchable molecular devices; however, they usually show low photocycloreversion quantum yields, which result in ineffective erasure processes. Here, we present the first highly efficient photochromic silole-containing dithienylethene with excellent thermal stability and fatigue resistance. The photochemical quantum yields for photocyclization and photocycloreversion of the compound are found to be high and comparable to each other; the latter of which is rarely found in diarylethene compounds. These would give rise to highly efficient photoswitchable material with effective writing and erasure processes. Incorporation of the silole moiety as a photochromic dithienylethene backbone also was demonstrated to enhance the thermal stability of the closed form, in which the thermal backward reaction to the open form was found to be negligible even at 100 °C, which leads to a promising candidate for use as photoswitchable materials and optical memory storage.

Optimization of ferroelectric liquid crystal optically addressed spatial light modulator performance

NASA Astrophysics Data System (ADS)

Perennes, Frederic; Crossland, William A.

1997-08-01

The switching mechanisms of ferroelectric liquid crystal optically addressed spatial light modulators (OASLMs) using a photosensitive structure made of an intrinsic amorphous silicon layer sandwiched in between an indium tin oxide coated glass sheet and a reflective metal layer are reviewed. Devices based on photoconductor and photodiode layers are briefly reviewed and attention is focused on pixelated metal mirror devices, which offer fast switching and good optical characteristics with the same sensitivity range as the photodiode OASLMs. They are particularly suitable for high frame rate SLMs with intense read beams. Optimum drive conditions for this type of device are considered. An equivalent electrical circuit is proposed for the photosensitive structure and the voltage drop across the liquid crystal layer is investigated and related to the optical response of the device. Experimental work is carried out to demonstrate the validity of our equivalent circuit. We show that the synchronization of a light source with the case pulse enables the OASLM to work at frame rates of a few kilohertz. We also demonstrate that the exact synchronization of the write light source with the write pulse enhances the potential memory of the device.

Photonic Potential of Haloarchaeal Pigment Bacteriorhodopsin for Future Electronics: A Review.

PubMed

Ashwini, Ravi; Vijayanand, S; Hemapriya, J

2017-08-01

Haloarchaea are known for its adaptation in extreme saline environment. Halophilic archaea produces carotenoid pigments and proton pumps to protect them from extremes of salinity. Bacteriorhodopsin (bR) is a light-driven proton pump that resides in the membrane of haloarchaea Halobacterium salinarum. The photocycle of Bacteriorhodopsin passes through several states from K to O, finally liberating ATP for host's survival. Extensive studies on Bacteriorhodopsin photocycle has provided in depth knowledge on their sequential mechanism of converting solar energy into chemical energy inside the cell. This ability of Bacteriorhodopsin to harvest sunlight has now been experimented to exploit the unexplored and extensively available solar energy in various biotechnological applications. Currently, bacteriorhodopsin finds its importance in dye-sensitized solar cell (DSSC), logic gates (integrated circuits, IC's), optical switching, optical memories, storage devices (random access memory, RAM), biosensors, electronic sensors and optical microcavities. This review deals with the optical and electrical applications of the purple pigment Bacteriorhodopsin.

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits.

PubMed

Lu, Yegang; Stegmaier, Matthias; Nukala, Pavan; Giambra, Marco A; Ferrari, Simone; Busacca, Alessandro; Pernice, Wolfram H P; Agarwal, Ritesh

2017-01-11

Phase change materials (PCMs) are highly attractive for nonvolatile electrical and all-optical memory applications because of unique features such as ultrafast and reversible phase transitions, long-term endurance, and high scalability to nanoscale dimensions. Understanding their transient characteristics upon phase transition in both the electrical and the optical domains is essential for using PCMs in future multifunctional optoelectronic circuits. Here, we use a PCM nanowire embedded into a nanophotonic circuit to study switching dynamics in mixed-mode operation. Evanescent coupling between light traveling along waveguides and a phase-change nanowire enables reversible phase transition between amorphous and crystalline states. We perform time-resolved measurements of the transient change in both the optical transmission and resistance of the nanowire and show reversible switching operations in both the optical and the electrical domains. Our results pave the way toward on-chip multifunctional optoelectronic integrated devices, waveguide integrated memories, and hybrid processing applications.

Femtojoule-scale all-optical latching and modulation via cavity nonlinear optics.

PubMed

Kwon, Yeong-Dae; Armen, Michael A; Mabuchi, Hideo

2013-11-15

We experimentally characterize Hopf bifurcation phenomena at femtojoule energy scales in a multiatom cavity quantum electrodynamical (cavity QED) system and demonstrate how such behaviors can be exploited in the design of all-optical memory and modulation devices. The data are analyzed by using a semiclassical model that explicitly treats heterogeneous coupling of atoms to the cavity mode. Our results highlight the interest of cavity QED systems for ultralow power photonic signal processing as well as for fundamental studies of mesoscopic nonlinear dynamics.

New trends in the optical and electronic applications of polymers containing transition-metal complexes.

PubMed

Liu, Shu-Juan; Chen, Yang; Xu, Wen-Juan; Zhao, Qiang; Huang, Wei

2012-04-13

Polymers containing transition-metal complexes exhibit excellent optical and electronic properties, which are different from those of polymers with a pure organic skeleton and combine the advantages of both polymers and metal complexes. Hence, research about this class of polymers has attracted more and more interest in recent years. Up to now, a number of novel polymers containing transition-metal complexes have been exploited, and significant advances in their optical and electronic applications have been achieved. In this article, we summarize some new research trends in the applications of this important class of optoelectronic polymers, such as chemo/biosensors, electronic memory devices and photovoltaic devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Long distance quantum communication using quantum error correction

NASA Technical Reports Server (NTRS)

Gingrich, R. M.; Lee, H.; Dowling, J. P.

2004-01-01

We describe a quantum error correction scheme that can increase the effective absorption length of the communication channel. This device can play the role of a quantum transponder when placed in series, or a cyclic quantum memory when inserted in an optical loop.

Molecular controlled of quantum nano systems

NASA Astrophysics Data System (ADS)

Paltiel, Yossi

2014-03-01

A century ago quantum mechanics created a conceptual revolution whose fruits are now seen in almost any aspect of our day-to-day life. Lasers, transistors and other solid state and optical devices represent the core technology of current computers, memory devices and communication systems. However, all these examples do not exploit fully the quantum revolution as they do not take advantage of the coherent wave-like properties of the quantum wave function. Controlled coherent system and devices at ambient temperatures are challenging to realize. We are developing a novel nano tool box with control coupling between the quantum states and the environment. This tool box that combines nano particles with organic molecules enables the integration of quantum properties with classical existing devices at ambient temperatures. The nano particles generate the quantum states while the organic molecules control the coupling and therefore the energy, charge, spin, or quasi particle transfer between the layers. Coherent effects at ambient temperatures can be measured in the strong coupling regime. In the talk I will present our nano tool box and show studies of charge transfer, spin transfer and energy transfer in the hybrid layers as well as collective transfer phenomena. These enable the realization of room temperature operating quantum electro optical devices. For example I will present in details, our recent development of a new type of chiral molecules based magnetless universal memory exploiting selective spin transfer.

A Retina-Like Dual Band Organic Photosensor Array for Filter-Free Near-Infrared-to-Memory Operations.

PubMed

Wang, Hanlin; Liu, Hongtao; Zhao, Qiang; Ni, Zhenjie; Zou, Ye; Yang, Jie; Wang, Lifeng; Sun, Yanqiu; Guo, Yunlong; Hu, Wenping; Liu, Yunqi

2017-08-01

Human eyes use retina photoreceptor cells to absorb and distinguish photons from different wavelengths to construct an image. Mimicry of such a process and extension of its spectral response into the near-infrared (NIR) is indispensable for night surveillance, retinal prosthetics, and medical imaging applications. Currently, NIR organic photosensors demand optical filters to reduce visible interference, thus making filter-free and anti-visible NIR imaging a challenging task. To solve this limitation, a filter-free and conformal, retina-inspired NIR organic photosensor is presented. Featuring an integration of photosensing and floating-gate memory modules, the device possesses an acute color distinguishing capability. In general, the retina-like photosensor transduces NIR (850 nm) into nonvolatile memory and acts as a dynamic photoswitch under green light (550 nm). In doing this, a filter-free but color-distinguishing photosensor is demonstrated that selectively converts NIR optical signals into nonvolatile memory. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ferroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers

PubMed Central

Fabiano, Simone; Sani, Negar; Kawahara, Jun; Kergoat, Loïg; Nissa, Josefin; Engquist, Isak; Crispin, Xavier; Berggren, Magnus

2017-01-01

Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is an organic mixed ion-electron conducting polymer. The PEDOT phase transports holes and is redox-active, whereas the PSS phase transports ions. When PEDOT is redox-switched between its semiconducting and conducting state, the electronic and optical properties of its bulk are controlled. Therefore, it is appealing to use this transition in electrochemical devices and to integrate those into large-scale circuits, such as display or memory matrices. Addressability and memory functionality of individual devices, within these matrices, are typically achieved by nonlinear current-voltage characteristics and bistability—functions that can potentially be offered by the semiconductor-conductor transition of redox polymers. However, low conductivity of the semiconducting state and poor bistability, due to self-discharge, make fast operation and memory retention impossible. We report that a ferroelectric polymer layer, coated along the counter electrode, can control the redox state of PEDOT. The polarization switching characteristics of the ferroelectric polymer, which take place as the coercive field is overcome, introduce desired nonlinearity and bistability in devices that maintain PEDOT in its highly conducting and fast-operating regime. Memory functionality and addressability are demonstrated in ferro-electrochromic display pixels and ferro-electrochemical transistors. PMID:28695197

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio

NASA Astrophysics Data System (ADS)

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-01

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

A trident dithienylethene-perylenemonoimide dyad with super fluorescence switching speed and ratio.

PubMed

Li, Chong; Yan, Hui; Zhao, Ling-Xi; Zhang, Guo-Feng; Hu, Zhe; Huang, Zhen-Li; Zhu, Ming-Qiang

2014-12-12

Photoswitchable fluorescent diarylethenes are promising in molecular optical memory and photonic devices. However, the performance of current diarylethenes is far from satisfactory because of the scarcity of high-speed switching capability and large fluorescence on-off ratio. Here we report a trident perylenemonoimide dyad modified by triple dithienylethenes whose photochromic fluorescence quenching ratio at the photostationary state exceeds 10,000 and the fluorescence quenching efficiency is close to 100% within seconds of ultraviolet irradiation. The highly sensitive fluorescence on/off switching of the trident dyad enables recyclable fluorescence patterning and all-optical transistors. The prototype optical device based on the trident dyad enables the optical switching of incident light and conversion from incident light wavelength to transmitted light wavelength, which is all-optically controlled, reversible and wavelength-convertible. In addition, the trident dyad-staining block copolymer vesicles are observed via optical nanoimaging with a sub-100 nm resolution, portending a potential prospect of the dithienylethene dyad in super-resolution imaging.

Optical interconnection networks for high-performance computing systems

NASA Astrophysics Data System (ADS)

Biberman, Aleksandr; Bergman, Keren

2012-04-01

Enabled by silicon photonic technology, optical interconnection networks have the potential to be a key disruptive technology in computing and communication industries. The enduring pursuit of performance gains in computing, combined with stringent power constraints, has fostered the ever-growing computational parallelism associated with chip multiprocessors, memory systems, high-performance computing systems and data centers. Sustaining these parallelism growths introduces unique challenges for on- and off-chip communications, shifting the focus toward novel and fundamentally different communication approaches. Chip-scale photonic interconnection networks, enabled by high-performance silicon photonic devices, offer unprecedented bandwidth scalability with reduced power consumption. We demonstrate that the silicon photonic platforms have already produced all the high-performance photonic devices required to realize these types of networks. Through extensive empirical characterization in much of our work, we demonstrate such feasibility of waveguides, modulators, switches and photodetectors. We also demonstrate systems that simultaneously combine many functionalities to achieve more complex building blocks. We propose novel silicon photonic devices, subsystems, network topologies and architectures to enable unprecedented performance of these photonic interconnection networks. Furthermore, the advantages of photonic interconnection networks extend far beyond the chip, offering advanced communication environments for memory systems, high-performance computing systems, and data centers.

Two-dimensional signal processing using a morphological filter for holographic memory

NASA Astrophysics Data System (ADS)

Kondo, Yo; Shigaki, Yusuke; Yamamoto, Manabu

2012-03-01

Today, along with the wider use of high-speed information networks and multimedia, it is increasingly necessary to have higher-density and higher-transfer-rate storage devices. Therefore, research and development into holographic memories with three-dimensional storage areas is being carried out to realize next-generation large-capacity memories. However, in holographic memories, interference between bits, which affect the detection characteristics, occurs as a result of aberrations such as the deviation of a wavefront in an optical system. In this study, we pay particular attention to the nonlinear factors that cause bit errors, where filters with a Volterra equalizer and the morphologies are investigated as a means of signal processing.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

PubMed

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Park, Jaegyu; Kim, Sanggi

2015-06-10

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.

Integrated Optical Information Processing

DTIC Science & Technology

1988-08-01

applications in optical disk memory systems [91. This device is constructed in a glass /SiO2/Si waveguide. The choice of a Si substrate allows for the...contact mask) were formed in the photoresist deposited on all of the samples, we covered the unwanted gratings on each sample with cover glass slides...processing, let us consider TeO2 (v, = 620 m/s) as a potential substrate for applications requiring large time delays. This con- sideration is despite

High-capacity optical long data memory based on enhanced Young's modulus in nanoplasmonic hybrid glass composites.

PubMed

Zhang, Qiming; Xia, Zhilin; Cheng, Yi-Bing; Gu, Min

2018-03-22

Emerging as an inevitable outcome of the big data era, long data are the massive amount of data that captures changes in the real world over a long period of time. In this context, recording and reading the data of a few terabytes in a single storage device repeatedly with a century-long unchanged baseline is in high demand. Here, we demonstrate the concept of optical long data memory with nanoplasmonic hybrid glass composites. Through the sintering-free incorporation of nanorods into the earth abundant hybrid glass composite, Young's modulus is enhanced by one to two orders of magnitude. This discovery, enabling reshaping control of plasmonic nanoparticles of multiple-length allows for continuous multi-level recording and reading with a capacity over 10 terabytes with no appreciable change of the baseline over 600 years, which opens new opportunities for long data memory that affects the past and future.

Electro-optical switching and memory display device

DOEpatents

Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

1983-12-29

An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

Electro-optical switching and memory display device

DOEpatents

Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

1986-01-01

An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

Thermally driven microfluidic pumping via reversible shape memory polymers

NASA Astrophysics Data System (ADS)

Robertson, J. M.; Rodriguez, R. X.; Holmes, L. R., Jr.; Mather, P. T.; Wetzel, E. D.

2016-08-01

The need exists for autonomous microfluidic pumping systems that utilize environmental cues to transport fluid within a network of channels for such purposes as heat distribution, self-healing, or optical reconfiguration. Here, we report on reversible thermally driven microfluidic pumping enabled by two-way shape memory polymers. After developing a suitable shape memory polymer (SMP) through variation in the crosslink density, thin and flexible microfluidic devices were constructed by lamination of plastic films with channels defined by laser-cutting of double-sided adhesive film. SMP blisters integrated into the devices provide thermally driven pumping, while opposing elastic blisters are used to generate backpressure for reversible operation. Thermal cycling of the device was found to drive reversible fluid flow: upon heating to 60 °C, the SMP rapidly contracted to fill the surface channels with a transparent fluid, and upon cooling to 8 °C the flow reversed and the channel re-filled with black ink. Combined with a metallized backing layer, this device results in refection of incident light at high temperatures and absorption of light (at the portions covered with channels) at low temperatures. We discuss power-free, autonomous applications ranging from thermal regulation of structures to thermal indication via color change.

Nanophotonic photon echo memory based on rare-earth-doped crystals

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan; Miyazono, Evan; Faraon, Andrei; Caltech nano quantum optics Team

2015-03-01

Rare earth ions (REIs) are promising candidates for implementing solid-state quantum memories and quantum repeater devices. Their high spectral stability and long coherence times make REIs a good choice for integration in an on-chip quantum nano-photonic platform. We report the coupling of the 883 nm transition of Neodymium (Nd) to a Yttrium orthosilicate (YSO) photonic crystal nano-beam resonator, achieving Purcell enhanced spontaneous emission by 21 times and increased optical absorption. Photon echoes were observed in nano-beams of different doping concentrations, yielding optical coherence times T2 up to 80 μs that are comparable to unprocessed bulk samples. This indicates the remarkable coherence properties of Nd are preserved during nanofabrication, therefore opening the possibility of efficient on-chip optical quantum memories. The nano-resonator with mode volume of 1 . 6(λ / n) 3 was fabricated using focused ion beam, and a quality factor of 3200 was measured. Purcell enhanced absorption of 80% by an ensemble of ~ 1 × 106 ions in the resonator was measured, which fulfills the cavity impedance matching condition that is necessary to achieve quantum storage of photons with unity efficiency.

Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals.

PubMed

Jang, Sukjae; Hwang, Euyheon; Lee, Youngbin; Lee, Seungwoo; Cho, Jeong Ho

2015-04-08

The advantages of graphene photodetectors were utilized to design a new multifunctional graphene optoelectronic device. Organic semiconductors, gold nanoparticles (AuNPs), and graphene were combined to fabricate a photodetecting device with a nonvolatile memory function for storing photonic signals. A pentacene organic semiconductor acted as a light absorption layer in the device and provided a high hole photocurrent to the graphene channel. The AuNPs, positioned between the tunneling and blocking dielectric layers, acted as both a charge trap layer and a plasmonic light scatterer, which enable storing of the information about the incident light. The proposed pentacene-graphene-AuNP hybrid photodetector not only performed well as a photodetector in the visible light range, it also was able to store the photonic signal in the form of persistent current. The good photodetection performance resulted from the plasmonics-enabled enhancement of the optical absorption and from the photogating mechanisms in the pentacene. The device provided a photoresponse that depended on the wavelength of incident light; therefore, the signal information (both the wavelength and intensity) of the incident light was effectively committed to memory. The simple process of applying a negative pulse gate voltage could then erase the programmed information. The proposed photodetector with the capacity to store a photonic signal in memory represents a significant step toward the use of graphene in optoelectronic devices.

Conductance Quantization in Resistive Random Access Memory

NASA Astrophysics Data System (ADS)

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

2015-10-01

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

Conductance Quantization in Resistive Random Access Memory.

PubMed

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

2015-12-01

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

Reconfigurable photonic crystals enabled by pressure-responsive shape-memory polymers

PubMed Central

Fang, Yin; Ni, Yongliang; Leo, Sin-Yen; Taylor, Curtis; Basile, Vito; Jiang, Peng

2015-01-01

Smart shape-memory polymers can memorize and recover their permanent shape in response to an external stimulus (for example, heat). They have been extensively exploited for a wide spectrum of applications ranging from biomedical devices to aerospace morphing structures. However, most of the existing shape-memory polymers are thermoresponsive and their performance is hindered by heat-demanding programming and recovery steps. Although pressure is an easily adjustable process variable such as temperature, pressure-responsive shape-memory polymers are largely unexplored. Here we report a series of shape-memory polymers that enable unusual ‘cold' programming and instantaneous shape recovery triggered by applying a contact pressure at ambient conditions. Moreover, the interdisciplinary integration of scientific principles drawn from two disparate fields—the fast-growing photonic crystal and shape-memory polymer technologies—enables fabrication of reconfigurable photonic crystals and simultaneously provides a simple and sensitive optical technique for investigating the intriguing shape-memory effects at nanoscale. PMID:26074349

Coherent all-optical control of ultracold atoms arrays in permanent magnetic traps.

PubMed

Abdelrahman, Ahmed; Mukai, Tetsuya; Häffner, Hartmut; Byrnes, Tim

2014-02-10

We propose a hybrid architecture for quantum information processing based on magnetically trapped ultracold atoms coupled via optical fields. The ultracold atoms, which can be either Bose-Einstein condensates or ensembles, are trapped in permanent magnetic traps and are placed in microcavities, connected by silica based waveguides on an atom chip structure. At each trapping center, the ultracold atoms form spin coherent states, serving as a quantum memory. An all-optical scheme is used to initialize, measure and perform a universal set of quantum gates on the single and two spin-coherent states where entanglement can be generated addressably between spatially separated trapped ultracold atoms. This allows for universal quantum operations on the spin coherent state quantum memories. We give detailed derivations of the composite cavity system mediated by a silica waveguide as well as the control scheme. Estimates for the necessary experimental conditions for a working hybrid device are given.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Electro-optical processing of phased array data

NASA Technical Reports Server (NTRS)

Casasent, D.

1973-01-01

An on-line spatial light modulator for application as the input transducer for a real-time optical data processing system is described. The use of such a device in the analysis and processing of radar data in real time is reported. An interface from the optical processor to a control digital computer was designed, constructed, and tested. The input transducer, optical system, and computer interface have been operated in real time with real time radar data with the input data returns recorded on the input crystal, processed by the optical system, and the output plane pattern digitized, thresholded, and outputted to a display and storage in the computer memory. The correlation of theoretical and experimental results is discussed.

Integrating opto-thermo-mechanical design tools: open engineering's project presentation

NASA Astrophysics Data System (ADS)

De Vincenzo, P.; Klapka, Igor

2017-11-01

An integrated numerical simulation package dedicated to the analysis of the coupled interactions of optical devices is presented. To reduce human interventions during data transfers, it is based on in-memory communications between the structural analysis software OOFELIE and the optical design application ZEMAX. It allows the automated enhancement of the existing optical design with information related to the deformations of optical surfaces due to thermomechanical solicitations. From the knowledge of these deformations, a grid of points or a decomposition based on Zernike polynomials can be generated for each surface. These data are then applied to the optical design. Finally, indicators can be retrieved from ZEMAX in order to compare the optical performances with those of the system in its nominal configuration.

Graphene devices based on laser scribing technology

NASA Astrophysics Data System (ADS)

Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

2018-04-01

Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

Enhanced organic memory devices (OMEM) with a photochromic perhydro DTE as a transduction layer (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cordes, Sandra; Kranz, Darius; Maibach, Eduard; Kempf, Maxim; Meerholz, Klaus

2016-09-01

In modern electronic systems memory elements are of fundamental importance for data storage. Especially solution-processable nonvolatile organic memories, which are inexpensive and can be manufactured on flexible substrates, are a promising alternative to brittle inorganic devices. Organic photochromic switchable compounds, mostly dithienylethenes (DTEs), are thermally stable, fatigue resistant and can undergo an electrically- or/and photo-induced ring-opening and -closing reaction which results in a change of energy levels. Due to the energetic difference in the highest occupied molecular orbital (HOMO) between the open and closed isomer, the DTE layer can be exploited as a switchable hole injection barrier that controls the electrical current in the diode. We demonstrated that a light-emitting organic memory (LE-OMEM) device with a perfluoro DTE transduction layer can be switched electrically via high current densities pulses and optically by irradiated light, with impressive current ON/OFF Ratios (OOR) of 10Λ2, 10Λ4 respectively. Currently we aim to minimize the barrier of the ON state and maximize the barrier of the OFF state by designing DTE molecules with larger differences in the HOMO energies of the two isomers yielding improved OOR values. By synthesizing perhydro derivates of DTE we achieved molecules with high HOMO levels and large ΔHOMO energies providing OMEM devices with excellent physical properties (OOR 1.4 x higher than perfluoro DTE). Due to the high HOMO level of the perhydro DTE utilization of hole transport layers (HTLs) is not necessary and thus manufacturing of OMEM devices is simplified.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects

PubMed Central

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Gyoo Kim, In; Hyuk Oh, Jin; Ae Kim, Sun; Park, Jaegyu; Kim, Sanggi

2015-01-01

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications. PMID:26061463

Spacecraft optical disk recorder memory buffer control

NASA Technical Reports Server (NTRS)

Hodson, Robert F.

1993-01-01

This paper discusses the research completed under the NASA-ASEE summer faculty fellowship program. The project involves development of an Application Specific Integrated Circuit (ASIC) to be used as a Memory Buffer Controller (MBC) in the Spacecraft Optical Disk System (SODR). The SODR system has demanding capacity and data rate specifications requiring specialized electronics to meet processing demands. The system is being designed to support Gigabit transfer rates with Terabit storage capability. The complete SODR system is designed to exceed the capability of all existing mass storage systems today. The ASIC development for SODR consist of developing a 144 pin CMOS device to perform format conversion and data buffering. The final simulations of the MBC were completed during this summer's NASA-ASEE fellowship along with design preparations for fabrication to be performed by an ASIC manufacturer.

Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

PubMed

Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

2017-12-28

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

Shift-phase code multiplexing technique for holographic memories and optical interconnection

NASA Astrophysics Data System (ADS)

Honma, Satoshi; Muto, Shinzo; Okamoto, Atsushi

2008-03-01

Holographic technologies for optical memories and interconnection devices have been studied actively because of high storage capacity, many wiring patterns and high transmission rate. Among multiplexing techniques such as angular, phase code and wavelength-multiplexing, speckle multiplexing technique have gotten attention due to the simple optical setup having an adjustable random phase filter in only one direction. To keep simple construction and to suppress crosstalk among adjacent page data or wiring patterns for efficient holographic memories and interconnection, we have to consider about optimum randomness of the phase filter. The high randomness causes expanding an illumination area of reference beam on holographic media. On the other hands, the small randomness causes the crosstalk between adjacent hologram data. We have proposed the method of holographic multiplexing, shift-phase code multiplexing with a two-dimensional orthogonal matrix phase filter. A lot of orthogonal phase codes can be produced by shifting the phase filter in one direction. It is able to read and record the individual holograms with low crosstalk. We give the basic experimental result on holographic data multiplexing and consider the phase pattern of the filter to suppress the crosstalk between adjacent holograms sufficiently.

Excitation of photonic atoms (dielectric microspheres) on optical fibers: application to room-temperature persistent spectral hole burning

NASA Astrophysics Data System (ADS)

Serpenguzel, Ali; Arnold, Stephen; Griffel, Giora

1995-05-01

Recently, photonic atoms (dielectric microspheres) have enjoyed the attention of the optical spectroscopy community. A variety of linear and nonlinear optical processes have been observed in liquid microdroplets. But solid state photonic devices using these properties are scarce. A first of these applications is the room temperature microparticle hole-burning memory. New applications can be envisioned if microparticle resonances can be coupled to traveling waves in optical fibers. In this paper we demonstrate the excitation of narrow morphology dependent resonances of microparticles placed on an optical fiber. Furthermore we reveal a model for this process which describes the coupling efficiency in terms of the geometrical and material properties of the microparticle-fiber system.

High speed color imaging through scattering media with a large field of view

NASA Astrophysics Data System (ADS)

Zhuang, Huichang; He, Hexiang; Xie, Xiangsheng; Zhou, Jianying

2016-09-01

Optical imaging through complex media has many important applications. Although research progresses have been made to recover optical image through various turbid media, the widespread application of the technology is hampered by the recovery speed, requirement on specific illumination, poor image quality and limited field of view. Here we demonstrate that above-mentioned drawbacks can be essentially overcome. The realization of high speed color imaging through turbid media is successfully carried out by taking into account the media memory effect, the point spread function, the exit pupil of the optical system, and the optimized signal to noise ratio. By retrieving selected speckles with enlarged field of view, high quality image is recovered with a responding speed only determined by the frame rates of the image capturing devices. The immediate application of the technique is expected to register static and dynamic imaging under human skin to recover information with a wearable device.

Chaos-assisted broadband momentum transformation in optical microresonators

NASA Astrophysics Data System (ADS)

Jiang, Xuefeng; Shao, Linbo; Zhang, Shu-Xin; Yi, Xu; Wiersig, Jan; Wang, Li; Gong, Qihuang; Lončar, Marko; Yang, Lan; Xiao, Yun-Feng

2017-10-01

The law of momentum conservation rules out many desired processes in optical microresonators. We report broadband momentum transformations of light in asymmetric whispering gallery microresonators. Assisted by chaotic motions, broadband light can travel between optical modes with different angular momenta within a few picoseconds. Efficient coupling from visible to near-infrared bands is demonstrated between a nanowaveguide and whispering gallery modes with quality factors exceeding 10 million. The broadband momentum transformation enhances the device conversion efficiency of the third-harmonic generation by greater than three orders of magnitude over the conventional evanescent-wave coupling. The observed broadband and fast momentum transformation could promote applications such as multicolor lasers, broadband memories, and multiwavelength optical networks.

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials

DOE PAGES

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.; ...

2017-07-21

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials.

PubMed

Zhu, Zhihua; Evans, Philip G; Haglund, Richard F; Valentine, Jason G

2017-08-09

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated and local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

A Flexible High-Performance Photoimaging Device Based on Bioinspired Hierarchical Multiple-Patterned Plasmonic Nanostructures.

PubMed

Lee, Yoon Ho; Lee, Tae Kyung; Kim, Hongki; Song, Inho; Lee, Jiwon; Kang, Saewon; Ko, Hyunhyub; Kwak, Sang Kyu; Oh, Joon Hak

2018-03-01

In insect eyes, ommatidia with hierarchical structured cornea play a critical role in amplifying and transferring visual signals to the brain through optic nerves, enabling the perception of various visual signals. Here, inspired by the structure and functions of insect ommatidia, a flexible photoimaging device is reported that can simultaneously detect and record incoming photonic signals by vertically stacking an organic photodiode and resistive memory device. A single-layered, hierarchical multiple-patterned back reflector that can exhibit various plasmonic effects is incorporated into the organic photodiode. The multiple-patterned flexible organic photodiodes exhibit greatly enhanced photoresponsivity due to the increased light absorption in comparison with the flat systems. Moreover, the flexible photoimaging device shows a well-resolved spatiotemporal mapping of optical signals with excellent operational and mechanical stabilities at low driving voltages below half of the flat systems. Theoretical calculation and scanning near-field optical microscopy analyses clearly reveal that multiple-patterned electrodes have much stronger surface plasmon coupling than flat and single-patterned systems. The developed methodology provides a versatile and effective route for realizing high-performance optoelectronic and photonic systems. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akimov, Denis A; Zheltikov, Aleksei M; Koroteev, Nikolai I

1998-06-30

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samplesmore » of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix. (laser applications and other topics in quantum electronics)« less

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

NASA Astrophysics Data System (ADS)

Akimov, Denis A.; Zheltikov, Aleksei M.; Koroteev, Nikolai I.; Magnitskiy, Sergey A.; Naumov, A. N.; Sidorov-Biryukov, D. A.; Sokolyuk, N. T.; Fedotov, Andrei B.

1998-06-01

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samples of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix.

All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

NASA Astrophysics Data System (ADS)

Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

2016-03-01

At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

Optical modular arithmetic

NASA Astrophysics Data System (ADS)

Pavlichin, Dmitri S.; Mabuchi, Hideo

2014-06-01

Nanoscale integrated photonic devices and circuits offer a path to ultra-low power computation at the few-photon level. Here we propose an optical circuit that performs a ubiquitous operation: the controlled, random-access readout of a collection of stored memory phases or, equivalently, the computation of the inner product of a vector of phases with a binary selector" vector, where the arithmetic is done modulo 2pi and the result is encoded in the phase of a coherent field. This circuit, a collection of cascaded interferometers driven by a coherent input field, demonstrates the use of coherence as a computational resource, and of the use of recently-developed mathematical tools for modeling optical circuits with many coupled parts. The construction extends in a straightforward way to the computation of matrix-vector and matrix-matrix products, and, with the inclusion of an optical feedback loop, to the computation of a weighted" readout of stored memory phases. We note some applications of these circuits for error correction and for computing tasks requiring fast vector inner products, e.g. statistical classification and some machine learning algorithms.

I/O performance evaluation of a Linux-based network-attached storage device

NASA Astrophysics Data System (ADS)

Sun, Zhaoyan; Dong, Yonggui; Wu, Jinglian; Jia, Huibo; Feng, Guanping

2002-09-01

In a Local Area Network (LAN), clients are permitted to access the files on high-density optical disks via a network server. But the quality of read service offered by the conventional server is not satisfied because of the multiple functions on the server and the overmuch caller. This paper develops a Linux-based Network-Attached Storage (NAS) server. The Operation System (OS), composed of an optimized kernel and a miniaturized file system, is stored in a flash memory. After initialization, the NAS device is connected into the LAN. The administrator and users could configure the access the server through the web page respectively. In order to enhance the quality of access, the management of buffer cache in file system is optimized. Some benchmark programs are peformed to evaluate the I/O performance of the NAS device. Since data recorded in optical disks are usually for reading accesses, our attention is focused on the reading throughput of the device. The experimental results indicate that the I/O performance of our NAS device is excellent.

Novel Plasmonic Materials and Nanodevices for Integrated Quantum Photonics

NASA Astrophysics Data System (ADS)

Shalaginov, Mikhail Y.

Light-matter interaction is the foundation for numerous important quantum optical phenomena, which may be harnessed to build practical devices with higher efficiency and unprecedented functionality. Nanoscale engineering is seen as a fruitful avenue to significantly strengthen light-matter interaction and also make quantum optical systems ultra-compact, scalable, and energy efficient. This research focuses on color centers in diamond that share quantum properties with single atoms. These systems promise a path for the realization of practical quantum devices such as nanoscale sensors, single-photon sources, and quantum memories. In particular, we explored an intriguing methodology of utilizing nanophotonic structures, such as hyperbolic metamaterials, nanoantennae, and plasmonic waveguides, to improve the color centers performance. We observed enhancement in the color center's spontaneous emission rate, emission directionality, and cooperativity over a broad optical frequency range. Additionally, we studied the effect of plasmonic environments on the spin-readout sensitivity of color centers. The use of CMOS-compatible epitaxially grown plasmonic materials in the design of these nanophotonic structures promises a new level of performance for a variety of integrated room-temperature quantum devices based on diamond color centers.

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

NASA Astrophysics Data System (ADS)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

The Effect of 4-Octyldecyloxybenzoic Acid on Liquid-Crystalline Polyurethane Composites with Triple-Shape Memory and Self-Healing Properties

PubMed Central

Ban, Jianfeng; Zhu, Linjiang; Chen, Shaojun; Wang, Yiping

2016-01-01

To better understand shape memory materials and self-healing materials, a new series of liquid-crystalline shape memory polyurethane (LC-SMPU) composites, named SMPU-OOBAm, were successfully prepared by incorporating 4-octyldecyloxybenzoic acid (OOBA) into the PEG-based SMPU. The effect of OOBA on the structure, morphology, and properties of the material has been carefully investigated. The results demonstrate that SMPU-OOBAm has liquid crystalline properties, triple-shape memory properties, and self-healing properties. The incorporated OOBA promotes the crystallizability of both soft and hard segments of SMPU, and the crystallization rate of the hard segment of SMPU decreases when the OOBA-content increases. Additionally, the SMPU-OOBAm forms a two-phase separated structure (SMPU phase and OOBA phase), and it shows two-step modulus changes upon heating. Therefore, the SMPU-OOBAm exhibits triple-shape memory behavior, and the shape recovery ratio decreases with an increase in the OOBA content. Finally, SMPU-OOBAm exhibits self-healing properties. The new mechanism can be ascribed to the heating-induced “bleeding” of OOBA in the liquid crystalline state and the subsequent re-crystallization upon cooling. This successful combination of liquid crystalline properties, triple-shape memory properties, and self-healing properties make the SMPU-OOBAm composites ideal for many promising applications in smart optical devices, smart electronic devices, and smart sensors. PMID:28773914

Direct Writing of Three-Dimensional Macroporous Photonic Crystals on Pressure-Responsive Shape Memory Polymers.

PubMed

Fang, Yin; Ni, Yongliang; Leo, Sin-Yen; Wang, Bingchen; Basile, Vito; Taylor, Curtis; Jiang, Peng

2015-10-28

Here we report a single-step direct writing technology for making three-dimensional (3D) macroporous photonic crystal patterns on a new type of pressure-responsive shape memory polymer (SMP). This approach integrates two disparate fields that do not typically intersect: the well-established templating nanofabrication and shape memory materials. Periodic arrays of polymer macropores templated from self-assembled colloidal crystals are squeezed into disordered arrays in an unusual shape memory "cold" programming process. The recovery of the original macroporous photonic crystal lattices can be triggered by direct writing at ambient conditions using both macroscopic and nanoscopic tools, like a pencil or a nanoindenter. Interestingly, this shape memory disorder-order transition is reversible and the photonic crystal patterns can be erased and regenerated hundreds of times, promising the making of reconfigurable/rewritable nanooptical devices. Quantitative insights into the shape memory recovery of collapsed macropores induced by the lateral shear stresses in direct writing are gained through fundamental investigations on important process parameters, including the tip material, the critical pressure and writing speed for triggering the recovery of the deformed macropores, and the minimal feature size that can be directly written on the SMP membranes. Besides straightforward applications in photonic crystal devices, these smart mechanochromic SMPs that are sensitive to various mechanical stresses could render important technological applications ranging from chromogenic stress and impact sensors to rewritable high-density optical data storage media.

Computer hardware for radiologists: Part 2.

PubMed

Indrajit, Ik; Alam, A

2010-11-01

Computers are an integral part of modern radiology equipment. In the first half of this two-part article, we dwelt upon some fundamental concepts regarding computer hardware, covering components like motherboard, central processing unit (CPU), chipset, random access memory (RAM), and memory modules. In this article, we describe the remaining computer hardware components that are of relevance to radiology. "Storage drive" is a term describing a "memory" hardware used to store data for later retrieval. Commonly used storage drives are hard drives, floppy drives, optical drives, flash drives, and network drives. The capacity of a hard drive is dependent on many factors, including the number of disk sides, number of tracks per side, number of sectors on each track, and the amount of data that can be stored in each sector. "Drive interfaces" connect hard drives and optical drives to a computer. The connections of such drives require both a power cable and a data cable. The four most popular "input/output devices" used commonly with computers are the printer, monitor, mouse, and keyboard. The "bus" is a built-in electronic signal pathway in the motherboard to permit efficient and uninterrupted data transfer. A motherboard can have several buses, including the system bus, the PCI express bus, the PCI bus, the AGP bus, and the (outdated) ISA bus. "Ports" are the location at which external devices are connected to a computer motherboard. All commonly used peripheral devices, such as printers, scanners, and portable drives, need ports. A working knowledge of computers is necessary for the radiologist if the workflow is to realize its full potential and, besides, this knowledge will prepare the radiologist for the coming innovations in the 'ever increasing' digital future.

Protein-Based Three-Dimensional Memories and Associative Processors

NASA Astrophysics Data System (ADS)

Birge, Robert

2008-03-01

The field of bioelectronics has benefited from the fact that nature has often solved problems of a similar nature to those which must be solved to create molecular electronic or photonic devices that operate with efficiency and reliability. Retinal proteins show great promise in bioelectronic devices because they operate with high efficiency (˜0.65%), high cyclicity (>10^7), operate over an extended wavelength range (360 -- 630 nm) and can convert light into changes in voltage, pH, absorption or refractive index. This talk will focus on a retinal protein called bacteriorhodopsin, the proton pump of the organism Halobacterium salinarum. Two memories based on this protein will be described. The first is an optical three-dimensional memory. This memory stores information using volume elements (voxels), and provides as much as a thousand-fold improvement in effective capacity over current technology. A unique branching reaction of a variant of bacteriorhodopsin is used to turn each protein into an optically addressed latched AND gate. Although three working prototypes have been developed, a number of cost/performance and architectural issues must be resolved prior to commercialization. The major issue is that the native protein provides a very inefficient branching reaction. Genetic engineering has improved performance by nearly 500-fold, but a further order of magnitude improvement is needed. Protein-based holographic associative memories will also be discussed. The human brain stores and retrieves information via association, and human intelligence is intimately connected to the nature and enormous capacity of this associative search and retrieval process. To a first order approximation, creativity can be viewed as the association of two seemingly disparate concepts to form a totally new construct. Thus, artificial intelligence requires large scale associative memories. Current computer hardware does not provide an optimal environment for creating artificial intelligence due to the serial nature of random access memories. Software cannot provide a satisfactory work-around that does not introduce unacceptable latency. Holographic associative memories provide a useful approach to large scale associative recall. Bacteriorhodopsin has long been recognized for its outstanding holographic properties, and when utilized in the Paek and Psaltis design, provides a high-speed real-time associative memory with variable thresholding and feedback. What remains is to make an associative memory capable of high-speed association and long-term data storage. The use of directed evolution to create a protein with the necessary unique properties will be discussed.

The effect of nonadiabaticity on the efficiency of quantum memory based on an optical cavity

NASA Astrophysics Data System (ADS)

Veselkova, N. G.; Sokolov, I. V.

2017-07-01

Quantum efficiency is an important characteristic of quantum memory devices that are aimed at recording the quantum state of light signals and its storing and reading. In the case of memory based on an ensemble of cold atoms placed in an optical cavity, the efficiency is restricted, in particular, by relaxation processes in the system of active atomic levels. We show how the effect of the relaxation on the quantum efficiency can be determined in a regime of the memory usage in which the evolution of signals in time is not arbitrarily slow on the scale of the field lifetime in the cavity and when the frequently used approximation of the adiabatic elimination of the quantized cavity mode field cannot be applied. Taking into account the effect of the nonadiabaticity on the memory quality is of interest in view of the fact that, in order to increase the field-medium coupling parameter, a higher cavity quality factor is required, whereas storing and processing of sequences of many signals in the memory implies that their duration is reduced. We consider the applicability of the well-known efficiency estimates via the system cooperativity parameter and estimate a more general form. In connection with the theoretical description of the memory of the given type, we also discuss qualitative differences in the behavior of a random source introduced into the Heisenberg-Langevin equations for atomic variables in the cases of a large and a small number of atoms.

Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

PubMed

Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

2016-09-19

Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

Progress In Optical Memory Technology

NASA Astrophysics Data System (ADS)

Tsunoda, Yoshito

1987-01-01

More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

All optical programmable logic array (PLA)

NASA Astrophysics Data System (ADS)

Hiluf, Dawit

2018-03-01

A programmable logic array (PLA) is an integrated circuit (IC) logic device that can be reconfigured to implement various kinds of combinational logic circuits. The device has a number of AND and OR gates which are linked together to give output or further combined with more gates or logic circuits. This work presents the realization of PLAs via the physics of a three level system interacting with light. A programmable logic array is designed such that a number of different logical functions can be combined as a sum-of-product or product-of-sum form. We present an all optical PLAs with the aid of laser light and observables of quantum systems, where encoded information can be considered as memory chip. The dynamics of the physical system is investigated using Lie algebra approach.

Strategic design and fabrication of acrylic shape memory polymers

NASA Astrophysics Data System (ADS)

Park, Ju Hyuk; Kim, Hansu; Ryoun Youn, Jae; Song, Young Seok

2017-08-01

Modulation of thermomechanics nature is a critical issue for an optimized use of shape memory polymers (SMPs). In this study, a strategic approach was proposed to control the transition temperature of SMPs. Free radical vinyl polymerization was employed for tailoring and preparing acrylic SMPs. Transition temperatures of the shape memory tri-copolymers were tuned by changing the composition of monomers. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy analyses were carried out to evaluate the chemical structures and compositions of the synthesized SMPs. The thermomechanical properties and shape memory performance of the SMPs were also examined by performing dynamic mechanical thermal analysis. Numerical simulation based on a finite element method provided consistent results with experimental cyclic shape memory tests of the specimens. Transient shape recovery tests were conducted and optical transparence of the samples was identified. We envision that the materials proposed in this study can help develop a new type of shape-memory devices in biomedical and aerospace engineering applications.

Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.

PubMed

Cheng, Shun-Wen; Han, Ting; Huang, Teng-Yung; Chang Chien, Yu-Hsin; Liu, Cheng-Liang; Tang, Ben Zhong; Liou, Guey-Sheng

2018-05-30

A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 10 4 s between these two states with an on/off ratio of 10 4 , and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

NASA Astrophysics Data System (ADS)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

Recent progress in photoactive organic field-effect transistors.

PubMed

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd E

2014-02-18

Persistent data storage is provided by a method that includes receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

A single-atom quantum memory.

PubMed

Specht, Holger P; Nölleke, Christian; Reiserer, Andreas; Uphoff, Manuel; Figueroa, Eden; Ritter, Stephan; Rempe, Gerhard

2011-05-12

The faithful storage of a quantum bit (qubit) of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must be able to receive and recreate the photonic qubit; additionally, it must store an unknown quantum state of light better than any classical device. So far, these two requirements have been met only by ensembles of material particles that store the information in collective excitations. Recent developments, however, have paved the way for an approach in which the information exchange occurs between single quanta of light and matter. This single-particle approach allows the material qubit to be addressed, which has fundamental advantages for realistic implementations. First, it enables a heralding mechanism that signals the successful storage of a photon by means of state detection; this can be used to combat inevitable losses and finite efficiencies. Second, it allows for individual qubit manipulations, opening up avenues for in situ processing of the stored quantum information. Here we demonstrate the most fundamental implementation of such a quantum memory, by mapping arbitrary polarization states of light into and out of a single atom trapped inside an optical cavity. The memory performance is tested with weak coherent pulses and analysed using full quantum process tomography. The average fidelity is measured to be 93%, and low decoherence rates result in qubit coherence times exceeding 180  microseconds. This makes our system a versatile quantum node with excellent prospects for applications in optical quantum gates and quantum repeaters.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju

Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

Holographic data storage crystals for the LDEF. [long duration exposure facility

NASA Technical Reports Server (NTRS)

Callen, W. Russell; Gaylord, Thomas K.

1992-01-01

Lithium niobate is a significant electro-optic material, with potential applications in ultra high capacity storage and processing systems. Lithium niobate is the material of choice for many integrated optical devices and holographic mass memory systems. For crystals of lithium niobate were passively exposed to the space environment of the Long Duration Exposure Facility (LDEF). Three of these crystals contained volume holograms. Although the crystals suffered the surface damage characteristics of most of the other optical components on the Georgia Tech tray, the crystals were recovered intact. The holograms were severely degraded because of the lengthy exposure, but the bulk properties are being investigated to determine the spaceworthiness for space data storage and retrieval systems.

Low latency and persistent data storage

DOEpatents

Fitch, Blake G; Franceschini, Michele M; Jagmohan, Ashish; Takken, Todd

2014-11-04

Persistent data storage is provided by a computer program product that includes computer program code configured for receiving a low latency store command that includes write data. The write data is written to a first memory device that is implemented by a nonvolatile solid-state memory technology characterized by a first access speed. It is acknowledged that the write data has been successfully written to the first memory device. The write data is written to a second memory device that is implemented by a volatile memory technology. At least a portion of the data in the first memory device is written to a third memory device when a predetermined amount of data has been accumulated in the first memory device. The third memory device is implemented by a nonvolatile solid-state memory technology characterized by a second access speed that is slower than the first access speed.

Light-activated resistance switching in SiOx RRAM devices

NASA Astrophysics Data System (ADS)

Mehonic, A.; Gerard, T.; Kenyon, A. J.

2017-12-01

We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

Data Movement Dominates: Advanced Memory Technology to Address the Real Exascale Power Problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergman, Keren

Energy is the fundamental barrier to Exascale supercomputing and is dominated by the cost of moving data from one point to another, not computation. Similarly, performance is dominated by data movement, not computation. The solution to this problem requires three critical technologies: 3D integration, optical chip-to-chip communication, and a new communication model. The central goal of the Sandia led "Data Movement Dominates" project aimed to develop memory systems and new architectures based on these technologies that have the potential to lower the cost of local memory accesses by orders of magnitude and provide substantially more bandwidth. Only through these transformationalmore » advances can future systems reach the goals of Exascale computing with a manageable power budgets. The Sandia led team included co-PIs from Columbia University, Lawrence Berkeley Lab, and the University of Maryland. The Columbia effort of Data Movement Dominates focused on developing a physically accurate simulation environment and experimental verification for optically-connected memory (OCM) systems that can enable continued performance scaling through high-bandwidth capacity, energy-efficient bit-rate transparency, and time-of-flight latency. With OCM, memory device parallelism and total capacity can scale to match future high-performance computing requirements without sacrificing data-movement efficiency. When we consider systems with integrated photonics, links to memory can be seamlessly integrated with the interconnection network-in a sense, memory becomes a primary aspect of the interconnection network. At the core of the Columbia effort, toward expanding our understanding of OCM enabled computing we have created an integrated modeling and simulation environment that uniquely integrates the physical behavior of the optical layer. The PhoenxSim suite of design and software tools developed under this effort has enabled the co-design of and performance evaluation photonics-enabled OCM architectures on Exascale computing systems.« less

Robust holographic storage system design.

PubMed

Watanabe, Takahiro; Watanabe, Minoru

2011-11-21

Demand is increasing daily for large data storage systems that are useful for applications in spacecraft, space satellites, and space robots, which are all exposed to radiation-rich space environment. As candidates for use in space embedded systems, holographic storage systems are promising because they can easily provided the demanded large-storage capability. Particularly, holographic storage systems, which have no rotation mechanism, are demanded because they are virtually maintenance-free. Although a holographic memory itself is an extremely robust device even in a space radiation environment, its associated lasers and drive circuit devices are vulnerable. Such vulnerabilities sometimes engendered severe problems that prevent reading of all contents of the holographic memory, which is a turn-off failure mode of a laser array. This paper therefore presents a proposal for a recovery method for the turn-off failure mode of a laser array on a holographic storage system, and describes results of an experimental demonstration. © 2011 Optical Society of America

System and method for programmable bank selection for banked memory subsystems

DOEpatents

Blumrich, Matthias A.; Chen, Dong; Gara, Alan G.; Giampapa, Mark E.; Hoenicke, Dirk; Ohmacht, Martin; Salapura, Valentina; Sugavanam, Krishnan

2010-09-07

A programmable memory system and method for enabling one or more processor devices access to shared memory in a computing environment, the shared memory including one or more memory storage structures having addressable locations for storing data. The system comprises: one or more first logic devices associated with a respective one or more processor devices, each first logic device for receiving physical memory address signals and programmable for generating a respective memory storage structure select signal upon receipt of pre-determined address bit values at selected physical memory address bit locations; and, a second logic device responsive to each of the respective select signal for generating an address signal used for selecting a memory storage structure for processor access. The system thus enables each processor device of a computing environment memory storage access distributed across the one or more memory storage structures.

Review of optical memory technologies

NASA Technical Reports Server (NTRS)

Chen, D.

1972-01-01

Optical technologies for meeting the demands of large capacity fast access time memory are discussed in terms of optical phenomena and laser applications. The magneto-optic and electro-optic approaches are considered to be the most promising memory approaches.

Spatial gradient tuning in metamaterials

NASA Astrophysics Data System (ADS)

Driscoll, Tom; Goldflam, Michael; Jokerst, Nan; Basov, Dimitri; Smith, David

2011-03-01

Gradient Index (GRIN) metamaterials have been used to create devices inspired by, but often surpassing the potential of, conventional GRIN optics. The unit-cell nature of metamaterials presents the opportunity to exert much greater control over spatial gradients than is possible in natural materials. This is true not only during the design phase but also offers the potential for real-time reconfiguration of the metamaterial gradient. This ability fits nicely into the picture of transformation-optics, in which spatial gradients can enable an impressive suite of innovative devices. We discuss methods to exert control over metamaterial response, focusing on our recent demonstrations using Vanadium Dioxide. We give special attention to role of memristance and mem-capacitance observed in Vanadium Dioxide, which simplify the demands of stimuli and addressing, as well as intersecting metamaterials with the field of memory-materials.

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

NASA Astrophysics Data System (ADS)

Phatak, C.; Petford-Long, A. K.; Beleggia, M.; De Graef, M.

2014-06-01

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

Resolution enhancement using simultaneous couple illumination

NASA Astrophysics Data System (ADS)

Hussain, Anwar; Martínez Fuentes, José Luis

2016-10-01

A super-resolution technique based on structured illumination created by a liquid crystal on silicon spatial light modulator (LCOS-SLM) is presented. Single and simultaneous pairs of tilted beams are generated to illuminate a target object. Resolution enhancement of an optical 4f system is demonstrated by using numerical simulations. The resulting intensity images are recorded at a charged couple device (CCD) and stored in the computer memory for further processing. One dimension enhancement can be performed with only 15 images. Two dimensional complete improvement requires 153 different images. The resolution of the optical system is extended three times compared to the band limited system.

Accessing global data from accelerator devices

DOEpatents

Bertolli, Carlo; O'Brien, John K.; Sallenave, Olivier H.; Sura, Zehra N.

2016-12-06

An aspect includes a table of contents (TOC) that was generated by a compiler being received at an accelerator device. The TOC includes an address of global data in a host memory space. The global data is copied from the address in the host memory space to an address in the device memory space. The address in the host memory space is obtained from the received TOC. The received TOC is updated to indicate that global data is stored at the address in the device memory space. A kernel that accesses the global data from the address in the device memory space is executed. The address in the device memory space is obtained based on contents of the updated TOC. When the executing is completed, the global data from the address in the device memory space is copied to the address in the host memory space.

Coherent Dynamics of a Hybrid Quantum Spin-Mechanical Oscillator System

NASA Astrophysics Data System (ADS)

Lee, Kenneth William, III

A fully functional quantum computer must contain at least two important components: a quantum memory for storing and manipulating quantum information and a quantum data bus to securely transfer information between quantum memories. Typically, a quantum memory is composed of a matter system, such as an atom or an electron spin, due to their prolonged quantum coherence. Alternatively, a quantum data bus is typically composed of some propagating degree of freedom, such as a photon, which can retain quantum information over long distances. Therefore, a quantum computer will likely be a hybrid quantum device, consisting of two or more disparate quantum systems. However, there must be a reliable and controllable quantum interface between the memory and bus in order to faithfully interconvert quantum information. The current engineering challenge for quantum computers is scaling the device to large numbers of controllable quantum systems, which will ultimately depend on the choice of the quantum elements and interfaces utilized in the device. In this thesis, we present and characterize a hybrid quantum device comprised of single nitrogen-vacancy (NV) centers embedded in a high quality factor diamond mechanical oscillator. The electron spin of the NV center is a leading candidate for the realization of a quantum memory due to its exceptional quantum coherence times. On the other hand, mechanical oscillators are highly sensitive to a wide variety of external forces, and have the potential to serve as a long-range quantum bus between quantum systems of disparate energy scales. These two elements are interfaced through crystal strain generated by vibrations of the mechanical oscillator. Importantly, a strain interface allows for a scalable architecture, and furthermore, opens the door to integration into a larger quantum network through coupling to an optical interface. There are a few important engineering challenges associated with this device. First, there have been no previous demonstrations of a strain-mediated spin-mechanical interface and hence the system is largely uncharacterized. Second, fabricating high quality diamond mechanical oscillators is difficult due to the robust and chemically inert nature of diamond. Finally, engineering highly coherent NV centers with a coherent optical interface in nanostructured diamond remains an outstanding challenge. In this thesis, we theoretically and experimentally address each of these challenges, and show that with future improvements, this device is suitable for future quantum-enabled applications. First, we theoretically and experimentally demonstrate a dynamic, strain-mediated coupling between the spin and orbital degrees of freedom of the NV center and the driven mechanical motion of a single-crystal diamond cantilever. We employ Ramsey interferometry to demonstrate coherent, mechanical driving of the NV spin evolution. Using this interferometry technique, we present the first demonstration of nanoscale strain imaging, and quantitatively characterize the previously unknown spin-strain coupling constants. Next, we use the driven motion of the cantilever to perform deterministic control of the frequency and polarization dependence of the optical transitions of the NV center. Importantly, this experiment constitutes the first demonstration of on-chip control of both the frequency and polarization state of a single photon produced by a quantum emitter. In the final experiment, we use mechanical driving to engineer a series of spin ``clock" states and demonstrate a significant increase in the spin coherence time of the NV center. We conclude this thesis with a theoretical discussion of prospective applications for this device, including generation of non-classical mechanical states and spin-spin entanglement, as well as an evaluation of the current limitations of our devices, including a possible avenues for improvement to reach the regime of strong spin-phonon coupling.

A waveguide frequency converter connecting rubidium-based quantum memories to the telecom C-band.

PubMed

Albrecht, Boris; Farrera, Pau; Fernandez-Gonzalvo, Xavier; Cristiani, Matteo; de Riedmatten, Hugues

2014-02-27

Coherently converting the frequency and temporal waveform of single and entangled photons will be crucial to interconnect the various elements of future quantum information networks. Of particular importance is the quantum frequency conversion of photons emitted by material systems able to store quantum information, so-called quantum memories. There have been significant efforts to implement quantum frequency conversion using nonlinear crystals, with non-classical light from broadband photon-pair sources and solid-state emitters. However, solid state quantum frequency conversion has not yet been achieved with long-lived optical quantum memories. Here we demonstrate an ultra-low-noise solid state photonic quantum interface suitable for connecting quantum memories based on atomic ensembles to the telecommunication fibre network. The interface is based on an integrated-waveguide nonlinear device. We convert heralded single photons at 780 nm from a rubidium-based quantum memory to the telecommunication wavelength of 1,552 nm, showing significant non-classical correlations between the converted photon and the heralding signal.

An UV photochromic memory effect in proton-based WO3 electrochromic devices

NASA Astrophysics Data System (ADS)

Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

2008-11-01

We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

Towards Highly-Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole-Based Photoelectronic Small Molecule.

PubMed

Li, Yang; Li, Hua; He, Jinghui; Xu, Qingfeng; Li, Najun; Chen, Dongyun; Lu, Jianmei

2016-07-20

A cooperative photoelectrical strategy is proposed for effectively modulating the performance of a multilevel data-storage device. By taking advantage of organic photoelectronic molecules as storage media, the fabricated device exhibited enhanced working parameters under the action of both optical and electrical inputs. In cooperation with UV light, the operating voltages of the memory device were decreased, which was beneficial for low energy consumption. Moreover, the ON/OFF current ratio was more tunable and facilitated high-resolution multilevel storage. Compared with previous methods that focused on tuning the storage media, this study provides an easy approach for optimizing organic devices through multiple physical channels. More importantly, this method holds promise for integrating multiple functionalities into high-density data-storage devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study on performances of colorless and transparent shape memory polyimide film in space thermal cycling, atomic oxygen and ultraviolet irradiation environments

NASA Astrophysics Data System (ADS)

Gao, Hui; Lan, Xin; Liu, Liwu; Xiao, Xinli; Liu, Yanju; Leng, Jinsong

2017-09-01

Shape memory polymers with high glass transition temperature (HSMPs) and HSMP-based deployable structures and devices, which can bear harsh operation conditions for durable applications, have attracted more and more interest in recent years. In this article, colorless and transparent shape memory polyimide (SMCTPI) films were subjected to simulated vacuum thermal cycling, atomic oxygen (AO) and ultraviolet (UV) irradiation environments up to 600 h, 556 h and 600 h for accelerated irradiation. The glass transition temperature (Tg) determined by differential scanning calorimetry (DSC) and dynamic mechanical analysis (DMA) had no obvious changes after being irradiated by varying amounts of thermal cycling, AO and UV irradiation dose. After being irradiated by 50 thermal cycles, 10 × 1021 atoms cm-2 AO irradiation and 3000 ESH UV irradiation, shape recovery behaviors of SMCTPI films also had no obvious damage even if they experienced 30 shape memory cycles, while the surface morphologies and optical properties were seriously destroyed by AO irradiation, as compared with thermal cycling and UV irradiation. The tensile strength could separately maintain 122 MPa, 120 MPa and 70 MPa after 50 thermal cycles, 10 × 1021 atoms cm-2 AO irradiation and 3000 ESH UV irradiation, which shows great potential for use in aerospace structures and devices.

Time-domain separation of optical properties from structural transitions in resonantly bonded materials.

PubMed

Waldecker, Lutz; Miller, Timothy A; Rudé, Miquel; Bertoni, Roman; Osmond, Johann; Pruneri, Valerio; Simpson, Robert E; Ernstorfer, Ralph; Wall, Simon

2015-10-01

The extreme electro-optical contrast between crystalline and amorphous states in phase-change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise owing to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase-change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 fs owing to a rapid depletion of electrons from resonantly bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2-ps time constant. The optical changes are an order of magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

System for simultaneously loading program to master computer memory devices and corresponding slave computer memory devices

NASA Technical Reports Server (NTRS)

Hall, William A. (Inventor)

1993-01-01

A bus programmable slave module card for use in a computer control system is disclosed which comprises a master computer and one or more slave computer modules interfacing by means of a bus. Each slave module includes its own microprocessor, memory, and control program for acting as a single loop controller. The slave card includes a plurality of memory means (S1, S2...) corresponding to a like plurality of memory devices (C1, C2...) in the master computer, for each slave memory means its own communication lines connectable through the bus with memory communication lines of an associated memory device in the master computer, and a one-way electronic door which is switchable to either a closed condition or a one-way open condition. With the door closed, communication lines between master computer memory (C1, C2...) and slave memory (S1, S2...) are blocked. In the one-way open condition invention, the memory communication lines or each slave memory means (S1, S2...) connect with the memory communication lines of its associated memory device (C1, C2...) in the master computer, and the memory devices (C1, C2...) of the master computer and slave card are electrically parallel such that information seen by the master's memory is also seen by the slave's memory. The slave card is also connectable to a switch for electronically removing the slave microprocessor from the system. With the master computer and the slave card in programming mode relationship, and the slave microprocessor electronically removed from the system, loading a program in the memory devices (C1, C2...) of the master accomplishes a parallel loading into the memory devices (S1, S2...) of the slave.

Discrete-state phasor neural networks

NASA Astrophysics Data System (ADS)

Noest, André J.

1988-08-01

An associative memory network with local variables assuming one of q equidistant positions on the unit circle (q-state phasors) is introduced, and its recall behavior is solved exactly for any q when the interactions are sparse and asymmetric. Such models can describe natural or artifical networks of (neuro-)biological, chemical, or electronic limit-cycle oscillators with q-fold instead of circular symmetry, or similar optical computing devices using a phase-encoded data representation.

Accessing global data from accelerator devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bertolli, Carlo; O'Brien, John K.; Sallenave, Olivier H.

2016-12-06

An aspect includes a table of contents (TOC) that was generated by a compiler being received at an accelerator device. The TOC includes an address of global data in a host memory space. The global data is copied from the address in the host memory space to an address in the device memory space. The address in the host memory space is obtained from the received TOC. The received TOC is updated to indicate that global data is stored at the address in the device memory space. A kernel that accesses the global data from the address in the devicemore » memory space is executed. The address in the device memory space is obtained based on contents of the updated TOC. When the executing is completed, the global data from the address in the device memory space is copied to the address in the host memory space.« less

Organo-metallic elements for associative information processing

NASA Astrophysics Data System (ADS)

Potember, Richard S.; Poehler, Theodore O.

1989-01-01

In the three years of the program we have: (1) built and tested a 4 bit element matrix device for possible use in high density content-addressable memories systems; (2) established a test and evaluation laboratory to examine optical materials for nonlinear effects, saturable absorption, harmonic generation and photochromism; (3) successfully designed, constructed and operated a codeposition processing system that enables organic materials to be deposited on a variety of substrates to produce optical grade coatings and films. This system is also compatible with other traditional microelectronic techniques; (4) used the sol-gel process with colloidal AgTCNQ to fabricate high speed photochromic switches; (5) develop and applied for patent coverage to make VO2 optical switching materials via the sol-gel processing using vanadium (IV) alkoxide compounds.

Light emission from silicon: Some perspectives and applications

NASA Astrophysics Data System (ADS)

Fiory, A. T.; Ravindra, N. M.

2003-10-01

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and may be at hand soon. A key advantage is in the use of silicon-based materials and processing, thereby using high yield and low-cost fabrication techniques. Anticipated applications include an optical emitter for integrated optical circuits, logic, memory, and interconnects; electro-optic isolators; massively parallel optical interconnects and cross connects for integrated circuit chips; lightwave components; high-power discrete and array emitters; and optoelectronic nanocell arrays for detecting biological and chemical agents. The new technical approaches resolve a basic issue with native interband electro-optical emission from bulk Si, which competes with nonradiative phonon- and defect-mediated pathways for electron-hole recombination. Some of the new ways to enhance optical emission efficiency in Si diode devices rely on carrier confinement, including defect and strain engineering in the bulk material. Others use Si nanocrystallites, nanowires, and alloying with Ge and crystal strain methods to achieve the carrier confinement required to boost radiative recombination efficiency. Another approach draws on the considerable progress that has been made in high-efficiency, solar-cell design and uses the reciprocity between photo- and light-emitting diodes. Important advances are also being made with silicon-oxide materials containing optically active rare-earth impurities.

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth

PubMed Central

Song, Ji-Min; Lee, Jang-Sik

2016-01-01

Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Associative properties of a multichannel photon echo and optical memory

NASA Astrophysics Data System (ADS)

Bikbov, I. S.; Zuikov, V. A.; Popov, I. I.; Popova, G. L.; Samartsev, V. V.

1995-10-01

An analysis is made of the results of an investigation of the physical principles underlying the operation of an associative optical memory and of processors utilising the photon (optical) echo phenomenon. The feasibility of constructing such optical memories is considered.

Memory hierarchy using row-based compression

DOEpatents

Loh, Gabriel H.; O'Connor, James M.

2016-10-25

A system includes a first memory and a device coupleable to the first memory. The device includes a second memory to cache data from the first memory. The second memory includes a plurality of rows, each row including a corresponding set of compressed data blocks of non-uniform sizes and a corresponding set of tag blocks. Each tag block represents a corresponding compressed data block of the row. The device further includes decompression logic to decompress data blocks accessed from the second memory. The device further includes compression logic to compress data blocks to be stored in the second memory.

Fabry-Perot confocal resonator optical associative memory

NASA Astrophysics Data System (ADS)

Burns, Thomas J.; Rogers, Steven K.; Vogel, George A.

1993-03-01

A unique optical associative memory architecture is presented that combines the optical processing environment of a Fabry-Perot confocal resonator with the dynamic storage and recall properties of volume holograms. The confocal resonator reduces the size and complexity of previous associative memory architectures by folding a large number of discrete optical components into an integrated, compact optical processing environment. Experimental results demonstrate the system is capable of recalling a complete object from memory when presented with partial information about the object. A Fourier optics model of the system's operation shows it implements a spatially continuous version of a discrete, binary Hopfield neural network associative memory.

Integrated electrochromic aperture diaphragm

NASA Astrophysics Data System (ADS)

Deutschmann, T.; Oesterschulze, E.

2014-05-01

In the last years, the triumphal march of handheld electronics with integrated cameras has opened amazing fields for small high performing optical systems. For this purpose miniaturized iris apertures are of practical importance because they are essential to control both the dynamic range of the imaging system and the depth of focus. Therefore, we invented a micro optical iris based on an electrochromic (EC) material. This material changes its absorption in response to an applied voltage. A coaxial arrangement of annular rings of the EC material is used to establish an iris aperture without need of any mechanical moving parts. The advantages of this device do not only arise from the space-saving design with a thickness of the device layer of 50μm. But it also benefits from low power consumption. In fact, its transmission state is stable in an open circuit, phrased memory effect. Only changes of the absorption require a voltage of up to 2 V. In contrast to mechanical iris apertures the absorption may be controlled on an analog scale offering the opportunity for apodization. These properties make our device the ideal candidate for battery powered and space-saving systems. We present optical measurements concerning control of the transmitted intensity and depth of focus, and studies dealing with switching times, light scattering, and stability. While the EC polymer used in this study still has limitations concerning color and contrast, the presented device features all functions of an iris aperture. In contrast to conventional devices it offers some special features. Owing to the variable chemistry of the EC material, its spectral response may be adjusted to certain applications like color filtering in different spectral regimes (UV, optical range, infrared). Furthermore, all segments may be switched individually to establish functions like spatial Fourier filtering or lateral tunable intensity filters.

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

NASA Astrophysics Data System (ADS)

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-09-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications.

PubMed

Gabrielyan, Nare; Saranti, Konstantina; Manjunatha, Krishna Nama; Paul, Shashi

2013-02-15

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid-solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.

Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications

PubMed Central

2013-01-01

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid–solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150°C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used. The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices. PMID:23413969

76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-07

... Access Memory and Nand Flash Memory Devices and Products Containing Same; Notice of Institution of... importation, and the sale within the United States after importation of certain dynamic random access memory and NAND flash memory devices and products containing same by reason of infringement of certain claims...

Chaos-assisted broadband momentum transformation in optical microresonators.

PubMed

Jiang, Xuefeng; Shao, Linbo; Zhang, Shu-Xin; Yi, Xu; Wiersig, Jan; Wang, Li; Gong, Qihuang; Lončar, Marko; Yang, Lan; Xiao, Yun-Feng

2017-10-20

The law of momentum conservation rules out many desired processes in optical microresonators. We report broadband momentum transformations of light in asymmetric whispering gallery microresonators. Assisted by chaotic motions, broadband light can travel between optical modes with different angular momenta within a few picoseconds. Efficient coupling from visible to near-infrared bands is demonstrated between a nanowaveguide and whispering gallery modes with quality factors exceeding 10 million. The broadband momentum transformation enhances the device conversion efficiency of the third-harmonic generation by greater than three orders of magnitude over the conventional evanescent-wave coupling. The observed broadband and fast momentum transformation could promote applications such as multicolor lasers, broadband memories, and multiwavelength optical networks. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Arbitrary unitary transformations on optical states using a quantum memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Geoff T.; Pinel, Olivier; Hosseini, Mahdi

2014-12-04

We show that optical memories arranged along an optical path can perform arbitrary unitary transformations on frequency domain optical states. The protocol offers favourable scaling and can be used with any quantum memory that uses an off-resonant Raman transition to reversibly transfer optical information to an atomic spin coherence.

Storing quantum information in spins and high-sensitivity ESR

NASA Astrophysics Data System (ADS)

Morton, John J. L.; Bertet, Patrice

2018-02-01

Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per √{ Hz } , with prospects to scale down to even fewer spins.

Vacancy structures and melting behavior in rock-salt GeSbTe

DOE PAGES

Zhang, Bin; Wang, Xue -Peng; Shen, Zhen -Ju; ...

2016-05-03

Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) atmore » an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Furthermore, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe.« less

Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe

PubMed Central

Zhang, Bin; Wang, Xue-Peng; Shen, Zhen-Ju; Li, Xian-Bin; Wang, Chuan-Shou; Chen, Yong-Jin; Li, Ji-Xue; Zhang, Jin-Xing; Zhang, Ze; Zhang, Sheng-Bai; Han, Xiao-Dong

2016-01-01

Ge-Sb-Te alloys have been widely used in optical/electrical memory storage. Because of the extremely fast crystalline-amorphous transition, they are also expected to play a vital role in next generation nonvolatile microelectronic memory devices. However, the distribution and structural properties of vacancies have been one of the key issues in determining the speed of melting (or amorphization), phase-stability, and heat-dissipation of rock-salt GeSbTe, which is crucial for its technological breakthrough in memory devices. Using spherical aberration-aberration corrected scanning transmission electron microscopy and atomic scale energy-dispersive X-ray mapping, we observe a new rock-salt structure with high-degree vacancy ordering (or layered-like ordering) at an elevated temperature, which is a result of phase transition from the rock-salt phase with randomly distributed vacancies. First-principles calculations reveal that the phase transition is an energetically favored process. Moreover, molecular dynamics studies suggest that the melting of the cubic rock-salt phases is initiated at the vacancies, which propagate to nearby regions. The observation of multi-rock-salt phases suggests another route for multi-level data storage using GeSbTe. PMID:27140674

Storing quantum information in spins and high-sensitivity ESR.

PubMed

Morton, John J L; Bertet, Patrice

2018-02-01

Quantum information, encoded within the states of quantum systems, represents a novel and rich form of information which has inspired new types of computers and communications systems. Many diverse electron spin systems have been studied with a view to storing quantum information, including molecular radicals, point defects and impurities in inorganic systems, and quantum dots in semiconductor devices. In these systems, spin coherence times can exceed seconds, single spins can be addressed through electrical and optical methods, and new spin systems with advantageous properties continue to be identified. Spin ensembles strongly coupled to microwave resonators can, in principle, be used to store the coherent states of single microwave photons, enabling so-called microwave quantum memories. We discuss key requirements in realising such memories, including considerations for superconducting resonators whose frequency can be tuned onto resonance with the spins. Finally, progress towards microwave quantum memories and other developments in the field of superconducting quantum devices are being used to push the limits of sensitivity of inductively-detected electron spin resonance. The state-of-the-art currently stands at around 65 spins per Hz, with prospects to scale down to even fewer spins. Copyright © 2017. Published by Elsevier Inc.

Sketched oxide single-electron transistor

NASA Astrophysics Data System (ADS)

Cheng, Guanglei; Siles, Pablo F.; Bi, Feng; Cen, Cheng; Bogorin, Daniela F.; Bark, Chung Wung; Folkman, Chad M.; Park, Jae-Wan; Eom, Chang-Beom; Medeiros-Ribeiro, Gilberto; Levy, Jeremy

2011-06-01

Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly `sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ~1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure.

PubMed

Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee

2009-01-14

The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.

High efficiency coherent optical memory with warm rubidium vapour

PubMed Central

Hosseini, M.; Sparkes, B.M.; Campbell, G.; Lam, P.K.; Buchler, B.C.

2011-01-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory. PMID:21285952

High efficiency coherent optical memory with warm rubidium vapour.

PubMed

Hosseini, M; Sparkes, B M; Campbell, G; Lam, P K; Buchler, B C

2011-02-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory.

A multiplexed light-matter interface for fibre-based quantum networks

PubMed Central

Saglamyurek, Erhan; Grimau Puigibert, Marcelli; Zhou, Qiang; Giner, Lambert; Marsili, Francesco; Verma, Varun B.; Woo Nam, Sae; Oesterling, Lee; Nippa, David; Oblak, Daniel; Tittel, Wolfgang

2016-01-01

Processing and distributing quantum information using photons through fibre-optic or free-space links are essential for building future quantum networks. The scalability needed for such networks can be achieved by employing photonic quantum states that are multiplexed into time and/or frequency, and light-matter interfaces that are able to store and process such states with large time-bandwidth product and multimode capacities. Despite important progress in developing such devices, the demonstration of these capabilities using non-classical light remains challenging. Here, employing the atomic frequency comb quantum memory protocol in a cryogenically cooled erbium-doped optical fibre, we report the quantum storage of heralded single photons at a telecom-wavelength (1.53 μm) with a time-bandwidth product approaching 800. Furthermore, we demonstrate frequency-multimode storage and memory-based spectral-temporal photon manipulation. Notably, our demonstrations rely on fully integrated quantum technologies operating at telecommunication wavelengths. With improved storage efficiency, our light-matter interface may become a useful tool in future quantum networks. PMID:27046076

A multiplexed light-matter interface for fibre-based quantum networks.

PubMed

Saglamyurek, Erhan; Grimau Puigibert, Marcelli; Zhou, Qiang; Giner, Lambert; Marsili, Francesco; Verma, Varun B; Woo Nam, Sae; Oesterling, Lee; Nippa, David; Oblak, Daniel; Tittel, Wolfgang

2016-04-05

Processing and distributing quantum information using photons through fibre-optic or free-space links are essential for building future quantum networks. The scalability needed for such networks can be achieved by employing photonic quantum states that are multiplexed into time and/or frequency, and light-matter interfaces that are able to store and process such states with large time-bandwidth product and multimode capacities. Despite important progress in developing such devices, the demonstration of these capabilities using non-classical light remains challenging. Here, employing the atomic frequency comb quantum memory protocol in a cryogenically cooled erbium-doped optical fibre, we report the quantum storage of heralded single photons at a telecom-wavelength (1.53 μm) with a time-bandwidth product approaching 800. Furthermore, we demonstrate frequency-multimode storage and memory-based spectral-temporal photon manipulation. Notably, our demonstrations rely on fully integrated quantum technologies operating at telecommunication wavelengths. With improved storage efficiency, our light-matter interface may become a useful tool in future quantum networks.

Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide.

PubMed

Han, Su-Ting; Zhou, Ye; Yang, Qing Dan; Zhou, Li; Huang, Long-Biao; Yan, Yan; Lee, Chun-Sing; Roy, Vellaisamy A L

2014-02-25

Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.

Real Time Large Memory Optical Pattern Recognition.

DTIC Science & Technology

1984-06-01

AD-Ri58 023 REAL TIME LARGE MEMORY OPTICAL PATTERN RECOGNITION(U) - h ARMY MISSILE COMMAND REDSTONE ARSENAL AL RESEARCH DIRECTORATE D A GREGORY JUN...TECHNICAL REPORT RR-84-9 Ln REAL TIME LARGE MEMORY OPTICAL PATTERN RECOGNITION Don A. Gregory Research Directorate US Army Missile Laboratory JUNE 1984 L...RR-84-9 , ___/_ _ __ _ __ _ __ _ __"__ _ 4. TITLE (and Subtitle) S. TYPE OF REPORT & PERIOD COVERED Real Time Large Memory Optical Pattern Technical

Polariton devices and quantum fluids

NASA Astrophysics Data System (ADS)

Ballarini, D.; De Giorgi, M.; Lerario, G.; Cannavale, A.; Cancellieri, E.; Bramati, A.; Gigli, G.; Laussy, F.; Sanvitto, D.

2014-02-01

Exciton-polaritons, composite particles resulting from the strong coupling between excitons and photons, have shown the capability to undergo condensation into a macroscopically coherent quantum state, demonstrating strong non-linearities and unique propagation properties. These strongly-coupled light-matter particles are promising candidates for the realization of semiconductor all-optical devices with fast time response and small energy consumption. Recently, quantum fluids of polaritons have been used to demonstrate the possibility to implement optical functionalities as spin switches, transistors or memories, but also to provide a channel for the transmission of information inside integrated circuits. In this context, the possibility to extend the range of light-matter interaction up to room temperature becomes of crucial importance. One of the most intriguing promises is to use organic Frenkel excitons, which, thanks to their huge oscillator strength, not only sustain the polariton picture at room temperature, but also bring the system into the unexplored regime of ultra-strong coupling. The combination of these materials with ad-hoc designed structures may allow the control of the propagation properties of polaritons, paving the way towards their implementation of the polariton functionalities in actual devices for opto-electronic applications.

Spike processing with a graphene excitable laser

PubMed Central

Shastri, Bhavin J.; Nahmias, Mitchell A.; Tait, Alexander N.; Rodriguez, Alejandro W.; Wu, Ben; Prucnal, Paul R.

2016-01-01

Novel materials and devices in photonics have the potential to revolutionize optical information processing, beyond conventional binary-logic approaches. Laser systems offer a rich repertoire of useful dynamical behaviors, including the excitable dynamics also found in the time-resolved “spiking” of neurons. Spiking reconciles the expressiveness and efficiency of analog processing with the robustness and scalability of digital processing. We demonstrate a unified platform for spike processing with a graphene-coupled laser system. We show that this platform can simultaneously exhibit logic-level restoration, cascadability and input-output isolation—fundamental challenges in optical information processing. We also implement low-level spike-processing tasks that are critical for higher level processing: temporal pattern detection and stable recurrent memory. We study these properties in the context of a fiber laser system and also propose and simulate an analogous integrated device. The addition of graphene leads to a number of advantages which stem from its unique properties, including high absorption and fast carrier relaxation. These could lead to significant speed and efficiency improvements in unconventional laser processing devices, and ongoing research on graphene microfabrication promises compatibility with integrated laser platforms. PMID:26753897

Auto- and hetero-associative memory using a 2-D optical logic gate

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

1989-01-01

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

Auto- and hetero-associative memory using a 2-D optical logic gate

NASA Astrophysics Data System (ADS)

Chao, Tien-Hsin

1989-06-01

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

NASA Astrophysics Data System (ADS)

Xiao, Jun; Zhu, Hanyu; Wang, Ying; Feng, Wei; Hu, Yunxia; Dasgupta, Arvind; Han, Yimo; Wang, Yuan; Muller, David A.; Martin, Lane W.; Hu, PingAn; Zhang, Xiang

2018-06-01

Out-of-plane ferroelectricity with a high transition temperature in ultrathin films is important for the exploration of new domain physics and scaling down of memory devices. However, depolarizing electrostatic fields and interfacial chemical bonds can destroy this long-range polar order at two-dimensional (2D) limit. Here we report the experimental discovery of the locking between out-of-plane dipoles and in-plane lattice asymmetry in atomically thin In2Se3 crystals, a new stabilization mechanism leading to our observation of intrinsic 2D out-of-plane ferroelectricity. Through second harmonic generation spectroscopy and piezoresponse force microscopy, we found switching of out-of-plane electric polarization requires a flip of nonlinear optical polarization that corresponds to the inversion of in-plane lattice orientation. The polar order shows a very high transition temperature (˜700 K ) without the assistance of extrinsic screening. This finding of intrinsic 2D ferroelectricity resulting from dipole locking opens up possibilities to explore 2D multiferroic physics and develop ultrahigh density memory devices.

Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure

NASA Astrophysics Data System (ADS)

Lo, Chun-Chieh; Hsieh, Tsung-Eong

2016-09-01

Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of device exceeds 80% in visible-light wavelength range. TRRAM samples exhibited the forming-free feature and the best electrical performance (V SET  =  0.61 V V RESET  =  -0.76 V R HRS/R LRS (i.e. the R-ratio)  >103) was observed in the device subject to a post-annealing at 300 °C for 1 hr in atmospheric ambient. Such a sample also exhibited satisfactory endurance and retention properties at 85 °C as revealed by the reliability tests. Electrical measurement performed in vacuum ambient indicated that the RS mechanism correlates with the charge trapping/de-trapping process associated with oxygen defects in the RS layer.

PLZT block data composers operated in differential phase mode. [lanthanum-modified lead zirconate titanate ceramic device for digital holographic memory

NASA Technical Reports Server (NTRS)

Drake, M. D.; Klingler, D. E.

1973-01-01

The use of PLZT ceramics with the 7/65/35 composition in block data composer (BDC) input devices for holographic memory systems has previously been described for operation in the strain biased, scattering, and edge effect modes. A new and promising mode of BDC operation is the differential phase mode in which each element of a matrix array BDC acts as a phase modulator. The phase modulation results from a phase difference in the optical path length between the electrically poled and depoled states of the PLZT. It is shown that a PLZT BDC can be used as a matrix-type phase modulator to record and process digital data by the differential phase mode in a holographic recording/processing system with readout contrast ratios of between 10:1 and 15:1. The differential phase mode has the advantages that strain bias is not required and that the thickness and strain variations in the PLZT are cancelled out.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory.

PubMed

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-10-15

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan-Lukin-Cirac-Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices.

Solid State Spin-Wave Quantum Memory for Time-Bin Qubits.

PubMed

Gündoğan, Mustafa; Ledingham, Patrick M; Kutluer, Kutlu; Mazzera, Margherita; de Riedmatten, Hugues

2015-06-12

We demonstrate the first solid-state spin-wave optical quantum memory with on-demand read-out. Using the full atomic frequency comb scheme in a Pr(3+):Y2SiO5 crystal, we store weak coherent pulses at the single-photon level with a signal-to-noise ratio >10. Narrow-band spectral filtering based on spectral hole burning in a second Pr(3+):Y2SiO5 crystal is used to filter out the excess noise created by control pulses to reach an unconditional noise level of (2.0±0.3)×10(-3) photons per pulse. We also report spin-wave storage of photonic time-bin qubits with conditional fidelities higher than achievable by a measure and prepare strategy, demonstrating that the spin-wave memory operates in the quantum regime. This makes our device the first demonstration of a quantum memory for time-bin qubits, with on-demand read-out of the stored quantum information. These results represent an important step for the use of solid-state quantum memories in scalable quantum networks.

Storage of multiple single-photon pulses emitted from a quantum dot in a solid-state quantum memory

PubMed Central

Tang, Jian-Shun; Zhou, Zong-Quan; Wang, Yi-Tao; Li, Yu-Long; Liu, Xiao; Hua, Yi-Lin; Zou, Yang; Wang, Shuang; He, De-Yong; Chen, Geng; Sun, Yong-Nan; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Li, Chuan-Feng; Guo, Guang-Can

2015-01-01

Quantum repeaters are critical components for distributing entanglement over long distances in presence of unavoidable optical losses during transmission. Stimulated by the Duan–Lukin–Cirac–Zoller protocol, many improved quantum repeater protocols based on quantum memories have been proposed, which commonly focus on the entanglement-distribution rate. Among these protocols, the elimination of multiple photons (or multiple photon-pairs) and the use of multimode quantum memory are demonstrated to have the ability to greatly improve the entanglement-distribution rate. Here, we demonstrate the storage of deterministic single photons emitted from a quantum dot in a polarization-maintaining solid-state quantum memory; in addition, multi-temporal-mode memory with 1, 20 and 100 narrow single-photon pulses is also demonstrated. Multi-photons are eliminated, and only one photon at most is contained in each pulse. Moreover, the solid-state properties of both sub-systems make this configuration more stable and easier to be scalable. Our work will be helpful in the construction of efficient quantum repeaters based on all-solid-state devices. PMID:26468996

A silicon-nanowire memory driven by optical gradient force induced bistability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, B.; Institute of Microelectronics, A*STAR; Cai, H., E-mail: caih@ime.a-star.edu.sg

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

Optoelectronic-cache memory system architecture.

PubMed

Chiarulli, D M; Levitan, S P

1996-05-10

We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.

Metal-organic molecular device for non-volatile memory storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radha, B., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U., E-mail: radha.boya@manchester.ac.uk, E-mail: kulkarni@jncasr.ac.in

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organicmore » complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.« less

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

NASA Astrophysics Data System (ADS)

Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

2016-08-01

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

Bubble memory module for spacecraft application

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Looney, K. T.; Nichols, C. D.

1985-01-01

Bubble domain technology offers an all-solid-state alternative for data storage in onboard data systems. A versatile modular bubble memory concept was developed. The key module is the bubble memory module which contains all of the storage devices and circuitry for accessing these devices. This report documents the bubble memory module design and preliminary hardware designs aimed at memory module functional demonstration with available commercial bubble devices. The system architecture provides simultaneous operation of bubble devices to attain high data rates. Banks of bubble devices are accessed by a given bubble controller to minimize controller parts. A power strobing technique is discussed which could minimize the average system power dissipation. A fast initialization method using EEPROM (electrically erasable, programmable read-only memory) devices promotes fast access. Noise and crosstalk problems and implementations to minimize these are discussed. Flight memory systems which incorporate the concepts and techniques of this work could now be developed for applications.

Adaptive packet switch with an optical core (demonstrator)

NASA Astrophysics Data System (ADS)

Abdo, Ahmad; Bishtein, Vadim; Clark, Stewart A.; Dicorato, Pino; Lu, David T.; Paredes, Sofia A.; Taebi, Sareh; Hall, Trevor J.

2004-11-01

A three-stage opto-electronic packet switch architecture is described consisting of a reconfigurable optical centre stage surrounded by two electronic buffering stages partitioned into sectors to ease memory contention. A Flexible Bandwidth Provision (FBP) algorithm, implemented on a soft-core processor, is used to change the configuration of the input sectors and optical centre stage to set up internal paths that will provide variable bandwidth to serve the traffic. The switch is modeled by a bipartite graph built from a service matrix, which is a function of the arriving traffic. The bipartite graph is decomposed by solving an edge-colouring problem and the resulting permutations are used to configure the switch. Simulation results show that this architecture exhibits a dramatic reduction of complexity and increased potential for scalability, at the price of only a modest spatial speed-up k, 1

Reconfigurable pipelined processor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saccardi, R.J.

1989-09-19

This patent describes a reconfigurable pipelined processor for processing data. It comprises: a plurality of memory devices for storing bits of data; a plurality of arithmetic units for performing arithmetic functions with the data; cross bar means for connecting the memory devices with the arithmetic units for transferring data therebetween; at least one counter connected with the cross bar means for providing a source of addresses to the memory devices; at least one variable tick delay device connected with each of the memory devices and arithmetic units; and means for providing control bits to the variable tick delay device formore » variably controlling the input and output operations thereof to selectively delay the memory devices and arithmetic units to align the data for processing in a selected sequence.« less

Light sensitivity of a one transistor-one capacitor memory cell when used as a micromirror actuator in projector applications

NASA Astrophysics Data System (ADS)

Huffman, James Douglas

2001-11-01

The most important issue facing the future business success of the Digital Micromirror Device or DMD™ produced by Texas Instruments is the cost of the actual device. As the business and consumer markets call for higher resolution displays, the array size will have to be increased to incorporate more pixels. The manufacturing costs associated with building these higher resolution displays follow an exponential relation with the number of pixels due to yield loss and reduced number of chips per silicon wafer. Each pixel is actuated by electrostatics that are provided by a memory cell that is built in the underlying silicon substrate. One way to decrease cost of the wafer is to change the memory cell architecture from a static random access configuration or SRAM to a dynamic random access configuration or DRAM. This change has the benefits of having fewer components per area and a lower metal density. This reduction in the component count and metal density has a dramatic effect on the yield of the memory array by reducing the particle sensitivity of the underlying cell. The main drawback to using a DRAM configuration in a display application is the light sensitivity of a charge storage device built in the silicon substrate. As the photons pass through the mechanical micromirrors and illuminate the DRAM cell, the effective electrostatic potential of the memory element used for the mirror actuation is reduced. This dissertation outlines the issues associated with the light sensitivity of a DRAM memory cell as the actuation element for a micromirror. The concept of charge depletion on a silicon capacitor due to recombination of photogenerated carriers is explored and experimentally verified. The effects of the reduced potential on the capacitor on the micromirror are also explored. Optical modeling is used to determine the incoming photon flux to determine the benefits of adding a charge recombination region as part of the DRAM memory cell. Several options are explored to reduce the effect of the incoming photons on the potential of the memory cell. The results will show that a 1T1C memory cell with N-type recombination regions and maximum light shielding is sufficient for a projector application.

Optically simulating a quantum associative memory

NASA Astrophysics Data System (ADS)

Howell, John C.; Yeazell, John A.; Ventura, Dan

2000-10-01

This paper discusses the realization of a quantum associative memory using linear integrated optics. An associative memory produces a full pattern of bits when presented with only a partial pattern. Quantum computers have the potential to store large numbers of patterns and hence have the ability to far surpass any classical neural-network realization of an associative memory. In this work two three-qubit associative memories will be discussed using linear integrated optics. In addition, corrupted, invented and degenerate memories are discussed.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2011-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2012-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

NASA Astrophysics Data System (ADS)

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

2018-05-01

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency.

PubMed

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A; Chen, Ying-Cheng

2018-05-04

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Optical mass memories

NASA Technical Reports Server (NTRS)

Bailey, G. A.

1976-01-01

Optical and magnetic variants in the design of trillion-bit read/write memories are compared and tabulated. Components and materials suitable for a random access read/write nonmoving memory system are examined, with preference given to holography and photoplastic materials. Advantages and deficiencies of photoplastics are reviewed. Holographic page composer design, essential features of an optical memory with no moving parts, fiche-oriented random access memory design, and materials suitable for an efficient photoplastic fiche are considered. The optical variants offer advantages in lower volume and weight at data transfer rates near 1 Mbit/sec, but power drain is of the same order as for the magnetic variants (tape memory, disk memory). The mechanical properties of photoplastic film materials still leave much to be desired.

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

PubMed Central

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-01-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation. PMID:27645425

Directed evolution of bacteriorhodopsin for applications in bioelectronics

PubMed Central

Wagner, Nicole L.; Greco, Jordan A.; Ranaghan, Matthew J.; Birge, Robert R.

2013-01-01

In nature, biological systems gradually evolve through complex, algorithmic processes involving mutation and differential selection. Evolution has optimized biological macromolecules for a variety of functions to provide a comparative advantage. However, nature does not optimize molecules for use in human-made devices, as it would gain no survival advantage in such cooperation. Recent advancements in genetic engineering, most notably directed evolution, have allowed for the stepwise manipulation of the properties of living organisms, promoting the expansion of protein-based devices in nanotechnology. In this review, we highlight the use of directed evolution to optimize photoactive proteins, with an emphasis on bacteriorhodopsin (BR), for device applications. BR, a highly stable light-activated proton pump, has shown great promise in three-dimensional optical memories, real-time holographic processors and artificial retinas. PMID:23676894

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

DOC II 32-bit digital optical computer: optoelectronic hardware and software

NASA Astrophysics Data System (ADS)

Stone, Richard V.; Zeise, Frederick F.; Guilfoyle, Peter S.

1991-12-01

This paper describes current electronic hardware subsystems and software code which support OptiComp's 32-bit general purpose digital optical computer (DOC II). The reader is referred to earlier papers presented in this section for a thorough discussion of theory and application regarding DOC II. The primary optoelectronic subsystems include the drive electronics for the multichannel acousto-optic modulators, the avalanche photodiode amplifier, as well as threshold circuitry, and the memory subsystems. This device utilizes a single optical Boolean vector matrix multiplier and its VME based host controller interface in performing various higher level primitives. OptiComp Corporation wishes to acknowledge the financial support of the Office of Naval Research, the National Aeronautics and Space Administration, the Rome Air Development Center, and the Strategic Defense Initiative Office for the funding of this program under contracts N00014-87-C-0077, N00014-89-C-0266 and N00014-89-C- 0225.

Reversible optical switching memristors with tunable STDP synaptic plasticity: a route to hierarchical control in artificial intelligent systems.

PubMed

Jaafar, Ayoub H; Gray, Robert J; Verrelli, Emanuele; O'Neill, Mary; Kelly, Stephen M; Kemp, Neil T

2017-11-09

Optical control of memristors opens the route to new applications in optoelectronic switching and neuromorphic computing. Motivated by the need for reversible and latched optical switching we report on the development of a memristor with electronic properties tunable and switchable by wavelength and polarization specific light. The device consists of an optically active azobenzene polymer, poly(disperse red 1 acrylate), overlaying a forest of vertically aligned ZnO nanorods. Illumination induces trans-cis isomerization of the azobenzene molecules, which expands or contracts the polymer layer and alters the resistance of the off/on states, their ratio and retention time. The reversible optical effect enables dynamic control of a memristor's learning properties including control of synaptic potentiation and depression, optical switching between short-term and long-term memory and optical modulation of the synaptic efficacy via spike timing dependent plasticity. The work opens the route to the dynamic patterning of memristor networks both spatially and temporally by light, thus allowing the development of new optically reconfigurable neural networks and adaptive electronic circuits.

Optical Interconnections for VLSI Computational Systems Using Computer-Generated Holography.

NASA Astrophysics Data System (ADS)

Feldman, Michael Robert

Optical interconnects for VLSI computational systems using computer generated holograms are evaluated in theory and experiment. It is shown that by replacing particular electronic connections with free-space optical communication paths, connection of devices on a single chip or wafer and between chips or modules can be improved. Optical and electrical interconnects are compared in terms of power dissipation, communication bandwidth, and connection density. Conditions are determined for which optical interconnects are advantageous. Based on this analysis, it is shown that by applying computer generated holographic optical interconnects to wafer scale fine grain parallel processing systems, dramatic increases in system performance can be expected. Some new interconnection networks, designed to take full advantage of optical interconnect technology, have been developed. Experimental Computer Generated Holograms (CGH's) have been designed, fabricated and subsequently tested in prototype optical interconnected computational systems. Several new CGH encoding methods have been developed to provide efficient high performance CGH's. One CGH was used to decrease the access time of a 1 kilobit CMOS RAM chip. Another was produced to implement the inter-processor communication paths in a shared memory SIMD parallel processor array.

Optical and Acoustic Device Applications of Ferroelastic Crystals

NASA Astrophysics Data System (ADS)

Meeks, Steven Wayne

This dissertation presents the discovery of a means of creating uniformly periodic domain gratings in a ferroelastic crystal of neodymium pentaphosphate (NPP). The uniform and non-uniform domain structures which can be created in NPP have the potential applications as tunable active gratings for lasers, tunable diffraction gratings, tunable Bragg reflection gratings, tunable acoustic filters, optical modulators, and optical domain wall memories. The interaction of optical and acoustic waves with ferroelastic domain walls in NPP is presented in detail. Acoustic amplitude reflection coefficients from a single domain wall in NPP are much larger than other ferroelastic-ferroelectrics such as gadolinium molybdate (GMO). Domain walls of NPP are used to make two demonstration acoustic devices: a tunable comb filter and a tunable delay line. The tuning process is accomplished by moving the position of the reflecting surface (the domain wall). A theory of the reflection of optical waves from NPP domain walls is discussed. The optical reflection is due to a change in the polarization of the wave, and not a change in the index, as the wave crosses the domain wall. Theoretical optical power reflection coefficients show good agreement with the experimentally measured values. The largest optical reflection coefficient of a single domain wall is at a critical angle and is 2.2% per domain wall. Techniques of injecting periodic and aperiodic domain walls into NPP are presented. The nucleation process of the uniformly periodic domain gratings in NPP is described in terms of a newly-discovered domain structure, namely the ferroelastic bubble. A ferroelastic bubble is the elastic analogue to the well-known magnetic bubble. The period of the uniformly periodic domain grating is tunable from 100 to 0.5 microns and the grating period may be tuned relatively rapidly. The Bragg efficiency of these tunable gratings is 77% for an uncoated crystal. Several demonstration devices which use these periodic structures are discussed. These devices are a tunable active grating laser (TAG laser), a tunable active grating (TAG), and a tunable acoustic bulk wave filter.

An upconverted photonic nonvolatile memory.

PubMed

Zhou, Ye; Han, Su-Ting; Chen, Xian; Wang, Feng; Tang, Yong-Bing; Roy, V A L

2014-08-21

Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

76 FR 73676 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Receipt of Complaint...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-29

... INTERNATIONAL TRADE COMMISSION [DN 2859] Certain Dynamic Random Access Memory Devices, and.... International Trade Commission has received a complaint entitled In Re Certain Dynamic Random Access Memory... certain dynamic random access memory devices, and products containing same. The complaint names Elpida...

Configurable unitary transformations and linear logic gates using quantum memories.

PubMed

Campbell, G T; Pinel, O; Hosseini, M; Ralph, T C; Buchler, B C; Lam, P K

2014-08-08

We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

NASA Astrophysics Data System (ADS)

Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

2017-07-01

We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-type memory devices.

Sketched Oxide Single-Electron Transistor

NASA Astrophysics Data System (ADS)

Cheng, Guanglei

2012-02-01

Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly ``sketch'' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides.ootnotetextCheng et al., Nature Nanotechnology 6, 343 (2011). In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ˜1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

Cycle accurate and cycle reproducible memory for an FPGA based hardware accelerator

DOEpatents

Asaad, Sameh W.; Kapur, Mohit

2016-03-15

A method, system and computer program product are disclosed for using a Field Programmable Gate Array (FPGA) to simulate operations of a device under test (DUT). The DUT includes a device memory having a number of input ports, and the FPGA is associated with a target memory having a second number of input ports, the second number being less than the first number. In one embodiment, a given set of inputs is applied to the device memory at a frequency Fd and in a defined cycle of time, and the given set of inputs is applied to the target memory at a frequency Ft. Ft is greater than Fd and cycle accuracy is maintained between the device memory and the target memory. In an embodiment, a cycle accurate model of the DUT memory is created by separating the DUT memory interface protocol from the target memory storage array.

Memory and Spin Injection Devices Involving Half Metals

DOE PAGES

Shaughnessy, M.; Snow, Ryan; Damewood, L.; ...

2011-01-01

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

Method and device for maximizing memory system bandwidth by accessing data in a dynamically determined order

NASA Technical Reports Server (NTRS)

Schwab, Andrew J. (Inventor); Aylor, James (Inventor); Hitchcock, Charles Young (Inventor); Wulf, William A. (Inventor); McKee, Sally A. (Inventor); Moyer, Stephen A. (Inventor); Klenke, Robert (Inventor)

2000-01-01

A data processing system is disclosed which comprises a data processor and memory control device for controlling the access of information from the memory. The memory control device includes temporary storage and decision ability for determining what order to execute the memory accesses. The compiler detects the requirements of the data processor and selects the data to stream to the memory control device which determines a memory access order. The order in which to access said information is selected based on the location of information stored in the memory. The information is repeatedly accessed from memory and stored in the temporary storage until all streamed information is accessed. The information is stored until required by the data processor. The selection of the order in which to access information maximizes bandwidth and decreases the retrieval time.

Nitrogen-doped partially reduced graphene oxide rewritable nonvolatile memory.

PubMed

Seo, Sohyeon; Yoon, Yeoheung; Lee, Junghyun; Park, Younghun; Lee, Hyoyoung

2013-04-23

As memory materials, two-dimensional (2D) carbon materials such as graphene oxide (GO)-based materials have attracted attention due to a variety of advantageous attributes, including their solution-processability and their potential for highly scalable device fabrication for transistor-based memory and cross-bar memory arrays. In spite of this, the use of GO-based materials has been limited, primarily due to uncontrollable oxygen functional groups. To induce the stable memory effect by ionic charges of a negatively charged carboxylic acid group of partially reduced graphene oxide (PrGO), a positively charged pyridinium N that served as a counterion to the negatively charged carboxylic acid was carefully introduced on the PrGO framework. Partially reduced N-doped graphene oxide (PrGODMF) in dimethylformamide (DMF) behaved as a semiconducting nonvolatile memory material. Its optical energy band gap was 1.7-2.1 eV and contained a sp2 C═C framework with 45-50% oxygen-functionalized carbon density and 3% doped nitrogen atoms. In particular, rewritable nonvolatile memory characteristics were dependent on the proportion of pyridinum N, and as the proportion of pyridinium N atom decreased, the PrGODMF film lost memory behavior. Polarization of charged PrGODMF containing pyridinium N and carboxylic acid under an electric field produced N-doped PrGODMF memory effects that followed voltage-driven rewrite-read-erase-read processes.

High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.

PubMed

Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak

2015-10-07

Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extended write combining using a write continuation hint flag

DOEpatents

Chen, Dong; Gara, Alan; Heidelberger, Philip; Ohmacht, Martin; Vranas, Pavlos

2013-06-04

A computing apparatus for reducing the amount of processing in a network computing system which includes a network system device of a receiving node for receiving electronic messages comprising data. The electronic messages are transmitted from a sending node. The network system device determines when more data of a specific electronic message is being transmitted. A memory device stores the electronic message data and communicating with the network system device. A memory subsystem communicates with the memory device. The memory subsystem stores a portion of the electronic message when more data of the specific message will be received, and the buffer combines the portion with later received data and moves the data to the memory device for accessible storage.

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

NASA Astrophysics Data System (ADS)

Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang

2016-02-01

Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.

Low-power chip-level optical interconnects based on bulk-silicon single-chip photonic transceivers

NASA Astrophysics Data System (ADS)

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Kim, Sun Ae; Oh, Jin Hyuk; Park, Jaegyu; Kim, Sanggi

2016-03-01

We present new scheme for chip-level photonic I/Os, based on monolithically integrated vertical photonic devices on bulk silicon, which increases the integration level of PICs to a complete photonic transceiver (TRx) including chip-level light source. A prototype of the single-chip photonic TRx based on a bulk silicon substrate demonstrated 20 Gb/s low power chip-level optical interconnects between fabricated chips, proving that this scheme can offer compact low-cost chip-level I/O solutions and have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, 3D-IC, and LAN/SAN/data-center and network applications.

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

NASA Astrophysics Data System (ADS)

Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

2017-09-01

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Satellite Test of Radiation Impact on Ramtron 512K FRAM

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Sayyah, Rana; Sims, W. Herb; Varnavas, Kosta A.; Ho, Fat D.

2009-01-01

The Memory Test Experiment is a space test of a ferroelectric memory device on a low Earth orbit satellite. The test consists of writing and reading data with a ferroelectric based memory device. Any errors are detected and are stored on board the satellite. The data is send to the ground through telemetry once a day. Analysis of the data can determine the kind of error that was found and will lead to a better understanding of the effects of space radiation on memory systems. The test will be one of the first flight demonstrations of ferroelectric memory in a near polar orbit which allows testing in a varied radiation environment. The memory devices being tested is a Ramtron Inc. 512K memory device. This paper details the goals and purpose of this experiment as well as the development process. The process for analyzing the data to gain the maximum understanding of the performance of the ferroelectric memory device is detailed.

Noise reduction in optically controlled quantum memory

NASA Astrophysics Data System (ADS)

Ma, Lijun; Slattery, Oliver; Tang, Xiao

2018-05-01

Quantum memory is an essential tool for quantum communications systems and quantum computers. An important category of quantum memory, called optically controlled quantum memory, uses a strong classical beam to control the storage and re-emission of a single-photon signal through an atomic ensemble. In this type of memory, the residual light from the strong classical control beam can cause severe noise and degrade the system performance significantly. Efficiently suppressing this noise is a requirement for the successful implementation of optically controlled quantum memories. In this paper, we briefly introduce the latest and most common approaches to quantum memory and review the various noise-reduction techniques used in implementing them.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

PubMed

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Resistive switching effect in the planar structure of all-printed, flexible and rewritable memory device based on advanced 2D nanocomposite of graphene quantum dots and white graphene flakes

NASA Astrophysics Data System (ADS)

Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Kim, Sowon; Choi, Kyung Hyun

2017-08-01

Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al2O3) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications.

Novel conformal organic antireflective coatings for advanced I-line lithography

NASA Astrophysics Data System (ADS)

Deshpande, Shreeram V.; Nowak, Kelly A.; Fowler, Shelly; Williams, Paul; Arjona, Mikko

2001-08-01

Flash memory chips are playing a critical role in semiconductor devices due to increased popularity of hand held electronic communication devices such as cell phones and PDAs (personal Digital Assistants). Flash memory offers two primary advantages in semiconductor devices. First, it offers flexibility of in-circuit programming capability to reduce the loss from programming errors and to significantly reduce commercialization time to market for new devices. Second, flash memory has a double density memory capability through stacked gate structures which increases the memory capability and thus saves significantly on chip real estate. However, due to stacked gate structures the requirements for manufacturing of flash memory devices are significantly different from traditional memory devices. Stacked gate structures also offer unique challenges to lithographic patterning materials such as Bottom Anti-Reflective Coating (BARC) compositions used to achieve CD control and to minimize standing wave effect in photolithography. To be applicable in flash memory manufacturing a BARC should form a conformal coating on high topography of stacked gate features as well as provide the normal anti-reflection properties for CD control. In this paper we report on a new highly conformal advanced i-line BARC for use in design and manufacture of flash memory devices. Conformal BARCs being significantly thinner in trenches than the planarizing BARCs offer the advantage of reducing BARC overetch and thus minimizing resist thickness loss.

Distributed multiport memory architecture

NASA Technical Reports Server (NTRS)

Kohl, W. H. (Inventor)

1983-01-01

A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

Memory device for two-dimensional radiant energy array computers

NASA Technical Reports Server (NTRS)

Schaefer, D. H.; Strong, J. P., III (Inventor)

1977-01-01

A memory device for two dimensional radiant energy array computers was developed, in which the memory device stores digital information in an input array of radiant energy digital signals that are characterized by ordered rows and columns. The memory device contains a radiant energy logic storing device having a pair of input surface locations for receiving a pair of separate radiant energy digital signal arrays and an output surface location adapted to transmit a radiant energy digital signal array. A regenerative feedback device that couples one of the input surface locations to the output surface location in a manner for causing regenerative feedback is also included

Molecular Electronic Devices Based On Electrooptical Behavior Of Heme-Like Molecules

NASA Astrophysics Data System (ADS)

Simic-Glavaski, B.

1986-02-01

This paper discusses application of the electrically modulated and unusually strong Raman emitted light produced by an adsorbed monolayer of phthalocyanine molecules on silver electrode or silver bromide substrates and on neural membranes. The analysis of electronic energy levels in semiconducting silver bromide and the adsorbed phthalocyanine molecules suggests a lasing mechanism as a possible origin of the high enhancement factor in surface enhanced Raman scattering. Electrically modulated Raman scattering may be used as a carrier of information which is drawn fran the fast intramolecular electron transfer aN,the multiplicity of quantum wells in phthalocyanine molecules. Fast switching times on the order of 10-13 seconds have been measured at room temperature. Multilevel and multioutput optical signals have also been obtained fran such an electrically modulated adsorbed monolayer of phthalocyanine molecules which can be precisely addressed and interrogated. This may be of practical use to develop Nlecular electronic devices with high density memory and fast parallel processing systems with a typical 1020 gate Hz/cm2 capacity at room temperature for use in optical computers. The paper also discusses the electrooptical modulation of Raman signals obtained from adsorbed bio-compatible phthalocyanine molecules on nerve membranes. This optical probe of neural systems can be used in studies of complex information processing in neural nets and provides a possible method for interfacing natural and man-made information processing devices.

Transistor and memory devices based on novel organic and biomaterials

NASA Astrophysics Data System (ADS)

Tseng, Jia-Hung

Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with platinum nanoparticles. It is established that the effective barrier height in the materials systems needs to be further engineered in order to have sufficiently long retention times. Finally other novel architectures such as negative differential resistance devices and high density memory arrays are investigated for their influence on memory technology.

Integration of optically active Neodymium ions in Niobium devices (Nd:Nb): quantum memory for hybrid quantum entangled systems

NASA Astrophysics Data System (ADS)

Nayfeh, O. M.; Chao, D.; Djapic, N.; Sims, P.; Liu, B.; Sharma, S.; Lerum, L.; Fahem, M.; Dinh, V.; Zlatanovic, S.; Lynn, B.; Torres, C.; Higa, B.; Moore, J.; Upchurch, A.; Cothern, J.; Tukeman, M.; Barua, R.; Davidson, B.; Ramirez, A. D.; Rees, C. D.; Anant, V.; Kanter, G. S.

2017-08-01

Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -< 4I11/2 Nd3+ transition at 1064-1070 nm are examined. In contrast, un-implanted Nb is void of any peaks. Line-shapes at room temperature are fit with Lorentzian profiles with line-widths of 4-5 nm and 1.3 THz bandwidth and the impacts of hyperfine splitting via the metallic crystal potential are apparent and the co-contribution of implant induced defects. With increasing Nd from 1% to 3%, there is a 0.3 nm red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.

Fault tolerant function of dynamic refreshing holographic memory with shutter-less optical feedback circuit

NASA Astrophysics Data System (ADS)

Okamoto, Atsushi; Ito, Terumasa; Bunsen, Masatoshi; Takayama, Yoshihisa

2005-11-01

The optical system, consisting of two photorefractive memories and a shutter-less optical feedback circuit, will be demonstrated to function as data mirroring. This function is known to automatically detect the data dropout and restore data, using unimpaired data in another memory, in the event that part or all of the data in either of them were lost for some reason. This memory system also can cope with a damaged hologram, a result of reading beams, which is a disadvantage of rewritable photorefractive memory, to ensure non-destructive holographic reading. It can be achieved by using no electronic circuits or mechanical structures; our optical experimental method in particular obtains this basic action.

Titanium oxide nonvolatile memory device and its application

NASA Astrophysics Data System (ADS)

Wang, Wei

In recent years, the semiconductor memory industry has seen an ever-increasing demand for nonvolatile memory (NVM), which is fueled by portable consumer electronic applications like the mobile phone and MP3 player. FLASH memory has been the most widely used nonvolatile memories in these systems, and has successfully kept up with CMOS scaling for many generations. However, as FLASH memory faces major scaling challenges beyond 22nm, non-charge-based nonvolatile memories are widely researched as candidates to replace FLASH. Titanium oxide (TiOx) nonvolatile memory device is considered to be a promising choice due to its controllable nonvolatile memory switching, good scalability, compatibility with CMOS processing and potential for 3D stacking. However, several major issues need to be overcome before TiOx NVM device can be adopted in manufacturing. First, there exists a highly undesirable high-voltage stress initiation process (FORMING) before the device can switch between high and low resistance states repeatedly. By analyzing the conductive behaviors of the memory device before and after FORMING, we propose that FORMING involves breaking down an interfacial layer between its Pt electrode and the TiOx thin film, and that FORMING is not needed if the Pt-TiOx interface can be kept clean during fabrication. An in-situ fabrication process is developed for cross-point TiOx NVM device, which enables in-situ deposition of the critical layers of the memory device and thus achieves clean interfaces between Pt electrodes and TiOx film. Testing results show that FORMING is indeed eliminated for memory devices made with the in-situ fabrication process. It verifies the significance of in-situ deposition without vacuum break in the fabrication of TiOx NVM devices. Switching parameters statistics of TiOx NVM devices are studied and compared for unipolar and bipolar switching modes. RESET mechanisms are found to be different for the two switching modes: unipolar switching can be explained by thermal dissolution model, and bipolar switching by local redox reaction model. Since it is generally agreed that the memory switching of TiOx NVM devices is based on conductive filaments, reusability of these conductive filaments becomes an intriguing issue to determine the memory device's endurance. A 1X3 cross-point test structure is built to investigate whether conductive filaments can be reused after RESET. It is found that the conductive filament is destroyed during unipolar switching, while can be reused during bipolar switching. The result is a good indication that bipolar switching should have better endurance than unipolar switching. Finally a novel application of the two-terminal resistive switching NVM devices is demonstrated. To reduce SRAM leakage power, we propose a nonvolatile SRAM cell with two back-up NVM devices. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty in this approach. Only a slight performance penalty is expected.

Halbach array type focusing actuator for small and thin optical data storage device

NASA Astrophysics Data System (ADS)

Lee, Sung Q.; Park, Kang-Ho; Paek, Mun Chul

2004-09-01

The small form factor optical data storage devices are developing rapidly nowadays. Since it is designed for portable and compatibility with flesh memory, its components such as disk, head, focusing actuator, and spindle motor should be assembled within 5 mm. The thickness of focusing actuator is within 2 mm and the total working range is +/-100um, with the resolution of less than 1μm. Since the thickness is limited tightly, it is hard to place the yoke that closes the magnetic circuit and hard to make strong flux density without yoke. Therefore, Halbach array is adopted to increase the magnetic flux of one side without yoke. The proposed Halbach array type focusing actuator has the advantage of thin actuation structure with sacrificing less flex density than conventional magnetic array. The optical head unit is moved on the swing arm type tracking actuator. Focusing coil is attached to swing arm, and Halbach magnet array is positioned at the bottom of deck along the tracking line, and focusing actuator exerts force by the Fleming's left hand rule. The dynamics, working range, control resolution of focusing actuator are analyzed and performed.

Projected phase-change memory devices.

PubMed

Koelmans, Wabe W; Sebastian, Abu; Jonnalagadda, Vara Prasad; Krebs, Daniel; Dellmann, Laurent; Eleftheriou, Evangelos

2015-09-03

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

PubMed

Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

2010-07-27

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Electrochemical synthesis, characterization and electrochromic properties of a copolymer based on 1,4-bis(2-thienyl)naphthalene and pyrene

NASA Astrophysics Data System (ADS)

Wang, Bin; Zhao, Jinsheng; Cui, Chuansheng; Wang, Min; Wang, Zhong; He, Qingpeng

2012-05-01

Electrochemical copolymerization of 1,4-bis(2-thienyl)naphthalene (BTN) with pyrene is carried out in acetonitrile (ACN) solution containing sodium perchlorate (NaClO4) as a supporting electrolyte. Characterizations of the resulting copolymer P(BTN-co-pyrene) are performed by cyclic voltammetry (CV), UV-vis spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). The P(BTN-co-pyrene) film has distinct electrochromic properties and exhibits three different colors (yellowish green, green and blue) under various potentials. Maximum contrast (ΔT%) and response time of the copolymer film are measured as 37.8% and 1.71 s at 687 nm. An electrochromic device (ECD) based on P(BTN-co-pyrene) and poly(3,4-ethylenedioxythiophene) (PEDOT) is constructed and characterized. Neutral state of device shows green color while oxidized state reveals blue color. This ECD shows a maximum optical contrast (ΔT%) of 24.4% with a response time of 0.43 s at 635 nm. The coloration efficiency (CE) of the device is calculated to be 349 cm2 C-1 at 635 nm. In addition, the ECD also has satisfactory optical memories and redox stability.

Systems and methods to control multiple peripherals with a single-peripheral application code

DOEpatents

Ransom, Ray M.

2013-06-11

Methods and apparatus are provided for enhancing the BIOS of a hardware peripheral device to manage multiple peripheral devices simultaneously without modifying the application software of the peripheral device. The apparatus comprises a logic control unit and a memory in communication with the logic control unit. The memory is partitioned into a plurality of ranges, each range comprising one or more blocks of memory, one range being associated with each instance of the peripheral application and one range being reserved for storage of a data pointer related to each peripheral application of the plurality. The logic control unit is configured to operate multiple instances of the control application by duplicating one instance of the peripheral application for each peripheral device of the plurality and partitioning a memory device into partitions comprising one or more blocks of memory, one partition being associated with each instance of the peripheral application. The method then reserves a range of memory addresses for storage of a data pointer related to each peripheral device of the plurality, and initializes each of the plurality of peripheral devices.

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

NASA Astrophysics Data System (ADS)

Goswami, Sreetosh; Matula, Adam J.; Rath, Santi P.; Hedström, Svante; Saha, Surajit; Annamalai, Meenakshi; Sengupta, Debabrata; Patra, Abhijeet; Ghosh, Siddhartha; Jani, Hariom; Sarkar, Soumya; Motapothula, Mallikarjuna Rao; Nijhuis, Christian A.; Martin, Jens; Goswami, Sreebrata; Batista, Victor S.; Venkatesan, T.

2017-12-01

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (<=30 ns), excellent endurance (~1012 cycles), stability (>106 s) and scalability (down to ~60 nm2). In situ Raman and ultraviolet-visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.

PubMed

Sun, Bai; Zhang, Xuejiao; Zhou, Guangdong; Yu, Tian; Mao, Shuangsuo; Zhu, Shouhui; Zhao, Yong; Xia, Yudong

2018-06-15

In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared device represents an outstanding nonvolatile memory behavior with good "write-read-erase-read" stability at room temperature. Finally, a physical model of Ag conductive filament is constructed to understanding the observed memory characteristics. The work provides a new way for the preparation of flexible memory devices based on ZnO films, and especially provides an experimental basis for the exploration of high-performance and portable nonvolatile resistance random memory (RRAM). Copyright © 2018 Elsevier Inc. All rights reserved.

Error Characterization and Mitigation for 16Nm MLC NAND Flash Memory Under Total Ionizing Dose Effect

NASA Technical Reports Server (NTRS)

Li, Yue (Inventor); Bruck, Jehoshua (Inventor)

2018-01-01

A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

Impacts of Co doping on ZnO transparent switching memory device characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa; Prasad, Om Kumar

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnOmore » device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.« less

Flexible non-volatile memory devices based on organic semiconductors

NASA Astrophysics Data System (ADS)

Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

2015-09-01

The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

Initial Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-Satellite

NASA Technical Reports Server (NTRS)

MacLeond, Todd C.; Sims, W. Herb; Varnavas,Kosta A.; Ho, Fat D.

2011-01-01

The Memory Test Experiment is a space test of a ferroelectric memory device on a low Earth orbit satellite that launched in November 2010. The memory device being tested is a commercial Ramtron Inc. 512K memory device. The circuit was designed into the satellite avionics and is not used to control the satellite. The test consists of writing and reading data with the ferroelectric based memory device. Any errors are detected and are stored on board the satellite. The data is sent to the ground through telemetry once a day. Analysis of the data can determine the kind of error that was found and will lead to a better understanding of the effects of space radiation on memory systems. The test is one of the first flight demonstrations of ferroelectric memory in a near polar orbit which allows testing in a varied radiation environment. The initial data from the test is presented. This paper details the goals and purpose of this experiment as well as the development process. The process for analyzing the data to gain the maximum understanding of the performance of the ferroelectric memory device is detailed.

Si-based optical I/O for optical memory interface

NASA Astrophysics Data System (ADS)

Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

2012-01-01

Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

Temperature-driven topological quantum phase transitions in a phase-change material Ge2Sb2Te5.

PubMed

Eremeev, S V; Rusinov, I P; Echenique, P M; Chulkov, E V

2016-12-13

The Ge 2 Sb 2 Te 5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electronic structure of the Ge 2 Sb 2 Te 5 crystalline phases. We demonstrate by predicting from first-principles calculations that stable crystal structures of Ge 2 Sb 2 Te 5 possess different topological quantum phases: a topological insulator phase is realized in low-temperature structure and Weyl semimetal phase is a characteristic of the high-temperature structure. Since the structural phase transitions are caused by the temperature the switching between different topologically non-trivial phases can be driven by variation of the temperature. The obtained results reveal the rich physics of the Ge 2 Sb 2 Te 5 compound and open previously unexplored possibility for spintronics applications of this material, substantially expanding its application potential.

Optical memories in digital computing

NASA Technical Reports Server (NTRS)

Alford, C. O.; Gaylord, T. K.

1979-01-01

High capacity optical memories with relatively-high data-transfer rate and multiport simultaneous access capability may serve as basis for new computer architectures. Several computer structures that might profitably use memories are: a) simultaneous record-access system, b) simultaneously-shared memory computer system, and c) parallel digital processing structure.

Single-chip microprocessor that communicates directly using light

NASA Astrophysics Data System (ADS)

Sun, Chen; Wade, Mark T.; Lee, Yunsup; Orcutt, Jason S.; Alloatti, Luca; Georgas, Michael S.; Waterman, Andrew S.; Shainline, Jeffrey M.; Avizienis, Rimas R.; Lin, Sen; Moss, Benjamin R.; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H.; Cook, Henry M.; Ou, Albert J.; Leu, Jonathan C.; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J.; Popović, Miloš A.; Stojanović, Vladimir M.

2015-12-01

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems—from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices8. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a ‘zero-change’ approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

Single-chip microprocessor that communicates directly using light.

PubMed

Sun, Chen; Wade, Mark T; Lee, Yunsup; Orcutt, Jason S; Alloatti, Luca; Georgas, Michael S; Waterman, Andrew S; Shainline, Jeffrey M; Avizienis, Rimas R; Lin, Sen; Moss, Benjamin R; Kumar, Rajesh; Pavanello, Fabio; Atabaki, Amir H; Cook, Henry M; Ou, Albert J; Leu, Jonathan C; Chen, Yu-Hsin; Asanović, Krste; Ram, Rajeev J; Popović, Miloš A; Stojanović, Vladimir M

2015-12-24

Data transport across short electrical wires is limited by both bandwidth and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems--from mobile phones to large-scale data centres. These limitations can be overcome by using optical communications based on chip-scale electronic-photonic systems enabled by silicon-based nanophotonic devices. However, combining electronics and photonics on the same chip has proved challenging, owing to microchip manufacturing conflicts between electronics and photonics. Consequently, current electronic-photonic chips are limited to niche manufacturing processes and include only a few optical devices alongside simple circuits. Here we report an electronic-photonic system on a single chip integrating over 70 million transistors and 850 photonic components that work together to provide logic, memory, and interconnect functions. This system is a realization of a microprocessor that uses on-chip photonic devices to directly communicate with other chips using light. To integrate electronics and photonics at the scale of a microprocessor chip, we adopt a 'zero-change' approach to the integration of photonics. Instead of developing a custom process to enable the fabrication of photonics, which would complicate or eliminate the possibility of integration with state-of-the-art transistors at large scale and at high yield, we design optical devices using a standard microelectronics foundry process that is used for modern microprocessors. This demonstration could represent the beginning of an era of chip-scale electronic-photonic systems with the potential to transform computing system architectures, enabling more powerful computers, from network infrastructure to data centres and supercomputers.

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Programmable DMA controller

NASA Technical Reports Server (NTRS)

Hendry, David F. (Inventor)

1993-01-01

In a data system having a memory, plural input/output (I/O) devices and a bus connecting each of the I/O devices to the memory, a direct memory access (DMA) controller regulating access of each of the I/O devices to the bus, including a priority register storing priorities of bus access requests from the I/O devices, an interrupt register storing bus access requests of the I/O devices, a resolver for selecting one of the I/O devices to have access to the bus, a pointer register storing addresses of locations in the memory for communication with the one I/O device via the bus, a sequence register storing an address of a location in the memory containing a channel program instruction which is to be executed next, an ALU for incrementing and decrementing addresses stored in the pointer register, computing the next address to be stored in the sequence register, computing an initial contents of each of the register. The memory contains a sequence of channel program instructions defining a set up operation wherein the contents of each of the registers in the channel register is initialized in accordance with the initial contents computed by the ALU and an access operation wherein data is transferred on the bus between a location in the memory whose address is currently stored in the pointer register and the one I/O device enabled by the resolver.

Overview of Probe-based Storage Technologies

NASA Astrophysics Data System (ADS)

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-07-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Overview of Probe-based Storage Technologies.

PubMed

Wang, Lei; Yang, Ci Hui; Wen, Jing; Gong, Si Di; Peng, Yuan Xiu

2016-12-01

The current world is in the age of big data where the total amount of global digital data is growing up at an incredible rate. This indeed necessitates a drastic enhancement on the capacity of conventional data storage devices that are, however, suffering from their respective physical drawbacks. Under this circumstance, it is essential to aggressively explore and develop alternative promising mass storage devices, leading to the presence of probe-based storage devices. In this paper, the physical principles and the current status of several different probe storage devices, including thermo-mechanical probe memory, magnetic probe memory, ferroelectric probe memory, and phase-change probe memory, are reviewed in details, as well as their respective merits and weakness. This paper provides an overview of the emerging probe memories potentially for next generation storage device so as to motivate the exploration of more innovative technologies to push forward the development of the probe storage devices.

Small Form Factor Information Storage Devices for Mobile Applications in Korea

NASA Astrophysics Data System (ADS)

Park, Young-Pil; Park, No-Cheol; Kim, Chul-Jin

Recently, the ubiquitous environment in which anybody can reach a lot of information data without any limitations on the place and time has become an important social issue. There are two basic requirements in the field of information storage devices which have to be satisfied; the first is the demand for the improvement of memory capacity to manage the increased data capacity in personal and official purposes. The second is the demand for new development of information storage devices small enough to be applied to mobile multimedia digital electronics, including digital camera, PDA and mobile phones. To summarize, for the sake of mobile applications, it is necessary to develop information storage devices which have simultaneously a large capacity and a small size. Korea possesses the necessary infrastructure for developing such small sized information storage devices. It has a good digital market, major digital companies, and various research institutes. Nowadays, many companies and research institutes including university cooperate together in the research on small sized information storage devices. Thus, it is expected that small form factor optical disk drives will be commercialized in the very near future in Korea.

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se.

PubMed

Shin, Sang-Yeol; Choi, J M; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-11-18

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0.6)Se(0.4) (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications.

Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek

2016-05-01

Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.

PubMed

Hwang, Bohee; Lee, Jang-Sik

2017-08-01

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH 3 NH 3 PbI 3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 5 s. Moreover, the use of sequential vapor deposition is extended to deposit CH 3 NH 3 PbI 3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance nonvolatile memory devices based on Cu2-xSe nanowires

NASA Astrophysics Data System (ADS)

Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

2013-11-01

We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

Atomic Source of Single Photons in the Telecom Band

NASA Astrophysics Data System (ADS)

Dibos, A. M.; Raha, M.; Phenicie, C. M.; Thompson, J. D.

2018-06-01

Single atoms and atomlike defects in solids are ideal quantum light sources and memories for quantum networks. However, most atomic transitions are in the ultraviolet-visible portion of the electromagnetic spectrum, where propagation losses in optical fibers are prohibitively large. Here, we observe for the first time the emission of single photons from a single Er3 + ion in a solid-state host, whose optical transition at 1.5 μ m is in the telecom band, allowing for low-loss propagation in optical fiber. This is enabled by integrating Er3 + ions with silicon nanophotonic structures, which results in an enhancement of the photon emission rate by a factor of more than 650. Dozens of distinct ions can be addressed in a single device, and the splitting of the lines in a magnetic field confirms that the optical transitions are coupled to the electronic spin of the Er3 + ions. These results are a significant step towards long-distance quantum networks and deterministic quantum logic for photons based on a scalable silicon nanophotonics architecture.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Wu, Zijin; Wang, Tongtong; Sun, Changqi; Liu, Peitao; Xia, Baorui; Zhang, Jingyan; Liu, Yonggang; Gao, Daqiang

2017-12-01

Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching behavior. Recent studies have also indicated that the doping of N element can reduce the band gap of MoS2 nanosheets, which is conducive to improving the conductivity of the material. Therefore, in this paper, we prepared N-doped MoS2 nanosheets and then fabricated N-doped MoS2-PVP nanocomposite films by spin coating. Finally, the resistive memory [C. Tan et al., Chem. Soc. Rev. 44, 2615 (2015)], device with ITO/N-doped MoS2-PVP/Pt structure was fabricated. Study on the I-V characteristics shows that the device has excellent resistance switching effect. It is worth mentioning that our device possesses a threshold voltage of 0.75 V, which is much better than 3.5 V reported previously for the undoped counterparts. The above research shows that N-doped MoS2-PVP nanocomposite films can be used as the active layer of resistive switching memory devices, and will make the devices have better performance.

General purpose programmable accelerator board

DOEpatents

Robertson, Perry J.; Witzke, Edward L.

2001-01-01

A general purpose accelerator board and acceleration method comprising use of: one or more programmable logic devices; a plurality of memory blocks; bus interface for communicating data between the memory blocks and devices external to the board; and dynamic programming capabilities for providing logic to the programmable logic device to be executed on data in the memory blocks.

76 FR 4375 - In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-01-25

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-683] In the Matter of Certain MLC Flash Memory Devices and Products Containing Same; Notice of Commission Determination Not To Review an Initial... the United States after importation of certain MLC flash memory devices and products containing same...

Optical RAM-enabled cache memory and optical routing for chip multiprocessors: technologies and architectures

NASA Astrophysics Data System (ADS)

Pleros, Nikos; Maniotis, Pavlos; Alexoudi, Theonitsa; Fitsios, Dimitris; Vagionas, Christos; Papaioannou, Sotiris; Vyrsokinos, K.; Kanellos, George T.

2014-03-01

The processor-memory performance gap, commonly referred to as "Memory Wall" problem, owes to the speed mismatch between processor and electronic RAM clock frequencies, forcing current Chip Multiprocessor (CMP) configurations to consume more than 50% of the chip real-estate for caching purposes. In this article, we present our recent work spanning from Si-based integrated optical RAM cell architectures up to complete optical cache memory architectures for Chip Multiprocessor configurations. Moreover, we discuss on e/o router subsystems with up to Tb/s routing capacity for cache interconnection purposes within CMP configurations, currently pursued within the FP7 PhoxTrot project.

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

NASA Astrophysics Data System (ADS)

Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

2007-04-01

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

NASA Astrophysics Data System (ADS)

Ham, Jung Hoon; Oh, Do Hyun; Cho, Sung Hwan; Jung, Jae Hun; Kim, Tae Whan; Ryu, Eui Dock; Kim, Sang Wook

2009-03-01

Current-voltage (I-V) curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the I-V curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental I-V data.

Optical computing, optical memory, and SBIRs at Foster-Miller

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.

1994-03-01

A desktop design and manufacturing system for binary diffractive elements, MacBEEP, was developed with the optical researcher in mind. Optical processing systems for specialized tasks such as cellular automation computation and fractal measurement were constructed. A new family of switchable holograms has enabled several applications for control of laser beams in optical memories. New spatial light modulators and optical logic elements have been demonstrated based on a more manufacturable semiconductor technology. Novel synthetic and polymeric nonlinear materials for optical storage are under development in an integrated memory architecture. SBIR programs enable creative contributions from smaller companies, both product oriented and technology oriented, and support advances that might not otherwise be developed.

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

PubMed Central

Jung, Sungchul; Jeon, Youngeun; Jin, Hanbyul; Lee, Jung-Yong; Ko, Jae-Hyeon; Kim, Nam; Eom, Daejin; Park, Kibog

2016-01-01

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture. PMID:27476475

Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro-Optic Devices

DTIC Science & Technology

1992-01-07

COVERED 4. TITLE AND SUBTITLE Nonlinear Optical Acrylic Polymers and Use Thereof in Optical and Electro - Optic Devices 5a. CONTRACT NUMBER 5b. GRANT...generators, computational devices and the like. 15. SUBJECT TERMS optical devices, electro - optical devices, optical signal processing...THEREOF IN OPTICAL AND ELECTRO - OPTIC DEVICES [75] Inventors: Le*lie H. Sperling, Bethlehem; Clarence J. Murphy, Stroudsburg; Warren A. Rosen

Wide memory window in graphene oxide charge storage nodes

NASA Astrophysics Data System (ADS)

Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping

2010-04-01

Solution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/Al2O3/isolated GO sheets/SiO2/p-Si memory device (TANOS). The TANOS type structure serves as memory device with the threshold voltage controlled by the amount of charge trapped in the GO sheet. Capacitance-Voltage hysteresis curves reveal a 7.5 V memory window using the sweep voltage of -5-14 V. Thermal reduction in the GO to graphene reduces the memory window to 1.4 V. The unique charge trapping properties of GO points to the potential applications in flexible organic memory devices.

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

Resonant tunneling based graphene quantum dot memristors.

PubMed

Pan, Xuan; Skafidas, Efstratios

2016-12-08

In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.

Laser-Activated Shape Memory Polymer Microactuator for Thrombus Removal Following Ischemic Stroke: Preliminary In Vitro Analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Small, W; Metzger, M F; Wilson, T S

2004-09-23

Due to the narrow (3-hour) treatment window for effective use of the thrombolytic drug recombinant tissue-type plasminogen activator (rt-PA), there is a need to develop alternative treatments for ischemic stroke. We are developing an intravascular device for mechanical thrombus removal using shape memory polymer (SMP). We propose to deliver the SMP microactuator in its secondary straight rod form (length = 4 cm, diameter = 350 {micro}m) through a catheter distal to the vascular occlusion. The microactuator, which is mounted on the end of an optical fiber, is then transformed into its primary corkscrew shape by laser heating (diode laser, {lambda}more » = 800 nm) above its soft phase glass transition temperature (T{sub gs} = 55 C). Once deployed, the microactuator is retracted and the captured thrombus is removed to restore blood flow. The SMP is doped with indocyanine green (ICG) dye to increase absorption of the laser light. Successful deployment of the microactuator depends on the optical properties of the ICG-doped SMP and the optical coupling efficiency of the interface between the optical fiber and the SMP. Spectrophotometry, thermal imaging, and computer simulation aided the initial design effort and continue to be useful tools for optimization of the dye concentration and laser power. Thermomechanical testing was performed to characterize the elastic modulus of the SMP. We have demonstrated laser-activation of the SMP microactuator in air at room temperature, suggesting this concept is a promising therapeutic alternative to rt-PA.« less

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

A new approach for implementation of associative memory using volume holographic materials

NASA Astrophysics Data System (ADS)

Habibi, Mohammad; Pashaie, Ramin

2012-02-01

Associative memory, also known as fault tolerant or content-addressable memory, has gained considerable attention in last few decades. This memory possesses important advantages over the more common random access memories since it provides the capability to correct faults and/or partially missing information in a given input pattern. There is general consensus that optical implementation of connectionist models and parallel processors including associative memory has a better record of success compared to their electronic counterparts. In this article, we describe a novel optical implementation of associative memory which not only has the advantage of all optical learning and recalling capabilities, it can also be realized easily. We present a new approach, inspired by tomographic imaging techniques, for holographic implementation of associative memories. In this approach, a volume holographic material is sandwiched within a matrix of inputs (optical point sources) and outputs (photodetectors). The memory capacity is realized by the spatial modulation of refractive index of the holographic material. Constructing the spatial distribution of the refractive index from an array of known inputs and outputs is formulated as an inverse problem consisting a set of linear integral equations.

A chiral-based magnetic memory device without a permanent magnet

PubMed Central

Dor, Oren Ben; Yochelis, Shira; Mathew, Shinto P.; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices. PMID:23922081

A chiral-based magnetic memory device without a permanent magnet.

PubMed

Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

2013-01-01

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2007-01-01

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

Biomaterial-based Memory Device Development by Conducting Metallic DNA

DTIC Science & Technology

2013-05-28

time. Therefore, we have created a multiple-states memory system . This is the first multi-states resistance memory device by using bio-nanowire of the...world. Based on this achievement, logic device and application will be developed in the near future, too. Moreover, by using Ni-DNA detection system ...ions in DNA can change the resistance of Ni-DNA by applying different polar bias and time. Therefore, we have created a multiple-states memory system

Femtosecond laser microfabrication in polymers towards memory devices and microfluidic applications

NASA Astrophysics Data System (ADS)

Deepak, K. L. N.; Venugopal Rao, S.; Narayana Rao, D.

2011-12-01

We have investigated femtosecond laser induced microstructures, gratings, and craters in four different polymers: poly methyl methacrylate (PMMA), poly dimethyl siloxane (PDMS), polystyrene (PS) and poly vinyl alcohol (PVA) using Ti:sapphire laser delivering 800 nm, 100 femtosecond (fs) pulses at 1 kHz repetition rate with a maximum pulse energy of 1 mJ. Local chemical modifications leading to the formation of optical centers and peroxide radicals which were studied using UV-Visible absorption and emission, confocal micro-Raman and Electron Spin Resonance (ESR) spectroscopic techniques.

Time Integrating Optical Signal Processing

DTIC Science & Technology

1981-07-01

advantage of greatly reducing the bandwidth requirement for the memory feeding the second cell. For a system composed of a PbMoO 4 and a ( TeO2 )s Bragg cell...bounds. ( TeO2 )L and ( TeO2 )s represent, respectively, the long- / , / itudinal and slow shear / modes of TeO2 . ’a , / / /a ’o [ / / / / was assumed here...could be implemented with a 25mm TeO2 device operated in the longitudinal mode in a hybrid system. A purely time-integrating system would require about

Space and power efficient hybrid counters array

DOEpatents

Gara, Alan G [Mount Kisco, NY; Salapura, Valentina [Chappaqua, NY

2009-05-12

A hybrid counter array device for counting events. The hybrid counter array includes a first counter portion comprising N counter devices, each counter device for receiving signals representing occurrences of events from an event source and providing a first count value corresponding to a lower order bits of the hybrid counter array. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits of the hybrid counter array. A control device monitors each of the N counter devices of the first counter portion and initiates updating a value of a corresponding second count value stored at the corresponding addressable memory location in the second counter portion. Thus, a combination of the first and second count values provide an instantaneous measure of number of events received.

Space and power efficient hybrid counters array

DOEpatents

Gara, Alan G.; Salapura, Valentina

2010-03-30

A hybrid counter array device for counting events. The hybrid counter array includes a first counter portion comprising N counter devices, each counter device for receiving signals representing occurrences of events from an event source and providing a first count value corresponding to a lower order bits of the hybrid counter array. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits of the hybrid counter array. A control device monitors each of the N counter devices of the first counter portion and initiates updating a value of a corresponding second count value stored at the corresponding addressable memory location in the second counter portion. Thus, a combination of the first and second count values provide an instantaneous measure of number of events received.

Electrical studies of Ge4Sb1Te5 devices for memory applications

NASA Astrophysics Data System (ADS)

Sangeetha, B. G.; Shylashree, N.

2018-05-01

In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

Intermediate memory devices

NASA Technical Reports Server (NTRS)

Basalayev, G. V.; Kmet, A. B.; Rakov, M. A.; Tarasevich, V. A.

1974-01-01

Several methods of transfer and processing of data whose practical implementation requires operational memory devices are described. Devices incorporating multistable elements are proposed and their main parameters are given. The possibility of using the proposed devices for storing information for transmission in space radio communications channels is examined.

Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

PubMed

Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

2015-05-01

A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

High Density Memory Based on Quantum Device Technology

NASA Technical Reports Server (NTRS)

vanderWagt, Paul; Frazier, Gary; Tang, Hao

1995-01-01

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

NASA Astrophysics Data System (ADS)

Lee, Sejoon; Song, Emil B.; Kim, Sungmin; Seo, David H.; Seo, Sunae; Won Kang, Tae; Wang, Kang L.

2012-01-01

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material's work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ˜4.5 V for the Ti-gate device and ˜9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

A fast and low-power microelectromechanical system-based non-volatile memory device

PubMed Central

Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

2011-01-01

Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

Process-specific analysis in episodic memory retrieval using fast optical signals and hemodynamic signals in the right prefrontal cortex

NASA Astrophysics Data System (ADS)

Dong, Sunghee; Jeong, Jichai

2018-02-01

Objective. Memory is formed by the interaction of various brain functions at the item and task level. Revealing individual and combined effects of item- and task-related processes on retrieving episodic memory is an unsolved problem because of limitations in existing neuroimaging techniques. To investigate these issues, we analyze fast and slow optical signals measured from a custom-built continuous wave functional near-infrared spectroscopy (CW-fNIRS) system. Approach. In our work, we visually encode the words to the subjects and let them recall the words after a short rest. The hemodynamic responses evoked by the episodic memory are compared with those evoked by the semantic memory in retrieval blocks. In the fast optical signal, we compare the effects of old and new items (previously seen and not seen) to investigate the item-related process in episodic memory. The Kalman filter is simultaneously applied to slow and fast optical signals in different time windows. Main results. A significant task-related HbR decrease was observed in the episodic memory retrieval blocks. Mean amplitude and peak latency of a fast optical signal are dependent upon item types and reaction time, respectively. Moreover, task-related hemodynamic and item-related fast optical responses are correlated in the right prefrontal cortex. Significance. We demonstrate that episodic memory is retrieved from the right frontal area by a functional connectivity between the maintained mental state through retrieval and item-related transient activity. To the best of our knowledge, this demonstration of functional NIRS research is the first to examine the relationship between item- and task-related memory processes in the prefrontal area using single modality.

Process-specific analysis in episodic memory retrieval using fast optical signals and hemodynamic signals in the right prefrontal cortex.

PubMed

Dong, Sunghee; Jeong, Jichai

2018-02-01

Memory is formed by the interaction of various brain functions at the item and task level. Revealing individual and combined effects of item- and task-related processes on retrieving episodic memory is an unsolved problem because of limitations in existing neuroimaging techniques. To investigate these issues, we analyze fast and slow optical signals measured from a custom-built continuous wave functional near-infrared spectroscopy (CW-fNIRS) system. In our work, we visually encode the words to the subjects and let them recall the words after a short rest. The hemodynamic responses evoked by the episodic memory are compared with those evoked by the semantic memory in retrieval blocks. In the fast optical signal, we compare the effects of old and new items (previously seen and not seen) to investigate the item-related process in episodic memory. The Kalman filter is simultaneously applied to slow and fast optical signals in different time windows. A significant task-related HbR decrease was observed in the episodic memory retrieval blocks. Mean amplitude and peak latency of a fast optical signal are dependent upon item types and reaction time, respectively. Moreover, task-related hemodynamic and item-related fast optical responses are correlated in the right prefrontal cortex. We demonstrate that episodic memory is retrieved from the right frontal area by a functional connectivity between the maintained mental state through retrieval and item-related transient activity. To the best of our knowledge, this demonstration of functional NIRS research is the first to examine the relationship between item- and task-related memory processes in the prefrontal area using single modality.

Ferroelectric Memory Devices and a Proposed Standardized Test System Design

DTIC Science & Technology

1992-06-01

positive clock transition. This provides automatic data protection in case of power loss. The device is being evaluated for applications such as automobile ...systems requiring nonvolatile memory and as these systems become more complex, the demand for reprogrammable nonvolatile memory increases. The...complexity and cost in making conventional nonvolatile memory reprogrammable also increases, so the potential for using ferroelectric memory as a replacement

Guide wire extension for shape memory polymer occlusion removal devices

DOEpatents

Maitland, Duncan J [Pleasant Hill, CA; Small, IV, Ward; Hartman, Jonathan [Sacramento, CA

2009-11-03

A flexible extension for a shape memory polymer occlusion removal device. A shape memory polymer instrument is transported through a vessel via a catheter. A flexible elongated unit is operatively connected to the distal end of the shape memory polymer instrument to enhance maneuverability through tortuous paths en route to the occlusion.

76 FR 80964 - Certain Dynamic Random Access Memory Devices, and Products Containing Same; Institution of...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-27

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-821] Certain Dynamic Random Access Memory... importation, and the sale within the United States after importation of certain dynamic random access memory... certain dynamic random access memory devices, and products containing same that infringe one or more of...

The potential of multi-port optical memories in digital computing

NASA Technical Reports Server (NTRS)

Alford, C. O.; Gaylord, T. K.

1975-01-01

A high-capacity memory with a relatively high data transfer rate and multi-port simultaneous access capability may serve as the basis for new computer architectures. The implementation of a multi-port optical memory is discussed. Several computer structures are presented that might profitably use such a memory. These structures include (1) a simultaneous record access system, (2) a simultaneously shared memory computer system, and (3) a parallel digital processing structure.

High speed optical object recognition processor with massive holographic memory

NASA Technical Reports Server (NTRS)

Chao, T.; Zhou, H.; Reyes, G.

2002-01-01

Real-time object recognition using a compact grayscale optical correlator will be introduced. A holographic memory module for storing a large bank of optimum correlation filters, to accommodate the large data throughput rate needed for many real-world applications, has also been developed. System architecture of the optical processor and the holographic memory will be presented. Application examples of this object recognition technology will also be demonstrated.

Electronic device aspects of neural network memories

NASA Technical Reports Server (NTRS)

Lambe, J.; Moopenn, A.; Thakoor, A. P.

1985-01-01

The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

Solution-processed flexible NiO resistive random access memory device

NASA Astrophysics Data System (ADS)

Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

2018-04-01

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

2018-03-01

For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

2018-01-01

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Graphene - ferroelectric and MoS2 - ferroelectric heterostructures for memory applications

NASA Astrophysics Data System (ADS)

Lipatov, Alexey; Sharma, Pankaj; Gruverman, Alexei; Sinitskii, Alexander

In recent years there has been an unprecedented interest in two-dimensional (2D) materials with unique physical and chemical properties that cannot be found in their three-dimensional (3D) counterparts. One of the important advantages of 2D materials is that they can be easily integrated with other 2D materials and functional films, resulting in multilayered structures with new properties. We fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on a single-layer graphene combined with lead zirconium titanate (PZT) substrate. Previously studied graphene-PZT devices exhibited an unusual electronic behavior such as clockwise hysteresis of electronic transport, in contradiction with counterclockwise polarization dependence of PZT. We investigated how the interplay of polarization and interfacial phenomena affects the electronic behavior and memory characteristics of graphene-PZT FETs, explain the origin of unusual clockwise hysteresis and experimentally demonstrate a reversed polarization-dependent hysteresis of electronic transport. In addition we fabricated and tested properties of MoS2-PZT FETs which exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that MoS2-PZT memories have a number of advantages over commercial FeRAMs, such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically.

Write once read many memory device from Tris-8 (-hydroxyquinoline) aluminum and Indium tin oxide nano particles

NASA Astrophysics Data System (ADS)

Aneesh, J.; Predeep, P.

2011-10-01

Consequent to the fast increase in data storage requirements new materials and device structures are explored in a war footing. Organic memory devices are attracting lot of interest among the researchers and are becoming a hot topic of investigations. This study is an attempt to develop a tri-layer organic memory device using indium tin oxide (ITO) nanoparticles as charge trapping middle layer between tris-8(-hydroxyquinoline)aluminum (Alq3) layers employing spin coating technique. Device switching is studied by applying a current-voltage (I-V) sweep. On increasing the applied bias the device switched from the initial high resistance (OFF) state to a low resistance (ON) state at a switch on voltage of around 4 V. ON/OFF ratio is of the order of 100 at a read voltage of 2 V. The device is found to remain in the low resistance state on further scans, showing the applicability of this device as a write once read many times (WORM) memory.

Dual-mode optical microscope based on single-pixel imaging

NASA Astrophysics Data System (ADS)

Rodríguez, A. D.; Clemente, P.; Tajahuerce, E.; Lancis, J.

2016-07-01

We demonstrate an inverted microscope that can image specimens in both reflection and transmission modes simultaneously with a single light source. The microscope utilizes a digital micromirror device (DMD) for patterned illumination altogether with two single-pixel photosensors for efficient light detection. The system, a scan-less device with no moving parts, works by sequential projection of a set of binary intensity patterns onto the sample that are codified onto a modified commercial DMD. Data to be displayed are geometrically transformed before written into a memory cell to cancel optical artifacts coming from the diamond-like shaped structure of the micromirror array. The 24-bit color depth of the display is fully exploited to increase the frame rate by a factor of 24, which makes the technique practicable for real samples. Our commercial DMD-based LED-illumination is cost effective and can be easily coupled as an add-on module for already existing inverted microscopes. The reflection and transmission information provided by our dual microscope complement each other and can be useful for imaging non-uniform samples and to prevent self-shadowing effects.

Magnetic and thermal properties of amorphous TbFeCo alloy films

NASA Astrophysics Data System (ADS)

Wang, Ke; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

2017-07-01

Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

Photo-induced optical activity in phase-change memory materials.

PubMed

Borisenko, Konstantin B; Shanmugam, Janaki; Williams, Benjamin A O; Ewart, Paul; Gholipour, Behrad; Hewak, Daniel W; Hussain, Rohanah; Jávorfi, Tamás; Siligardi, Giuliano; Kirkland, Angus I

2015-03-05

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.

Investigation of the development of optically controlled memory elements on the basis of multilayer semiconductor-dielectric structures

NASA Astrophysics Data System (ADS)

Plotnikov, A. F.; Seleznev, V. N.

The possibility of reverse optical recording in MNOS structures of Me-Si3N4-SiO2-Si type is investigated. Charge-transfer processes in traps under the effect of electric pulses are examined, and attention is given to the application of laser switching and photoelectric reading techniques to such structures. The principal energetic and temporal characteristics of such optical memories are examined, and the organization of a high-capacity (greater than 100-million bits) optical memory is discussed.

Design rules for phase-change materials in data storage applications.

PubMed

Lencer, Dominic; Salinga, Martin; Wuttig, Matthias

2011-05-10

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Petabyte mass memory system using the Newell Opticel(TM)

NASA Technical Reports Server (NTRS)

Newell, Chester W.

1994-01-01

A random access system is proposed for digital storage and retrieval of up to a Petabyte of user data. The system is comprised of stacked memory modules using laser heads writing to an optical medium, in a new shirt-pocket-sized optical storage device called the Opticel. The Opticel described is a completely sealed 'black box' in which an optical medium is accelerated and driven at very high rates to accommodate the desired transfer rates, yet in such a manner that wear is virtually eliminated. It essentially emulates a disk, but with storage area up to several orders of magnitude higher. Access time to the first bit can range from a few milliseconds to a fraction of a second, with time to the last bit within a fraction of a second to a few seconds. The actual times are dependent on the capacity of each Opticel, which ranges from 72 Gigabytes to 1.25 Terabytes. Data transfer rate is limited strictly by the head and electronics, and is 15 Megabits per second in the first version. Independent parallel write/read access to each Opticel is provided using dedicated drives and heads. A Petabyte based on the present Opticel and drive design would occupy 120 cubic feet on a footprint of 45 square feet; with further development, it could occupy as little as 9 cubic feet.

Reducing noise in a Raman quantum memory.

PubMed

Bustard, Philip J; England, Duncan G; Heshami, Khabat; Kupchak, Connor; Sussman, Benjamin J

2016-11-01

Optical quantum memories are an important component of future optical and hybrid quantum technologies. Raman schemes are strong candidates for use with ultrashort optical pulses due to their broad bandwidth; however, the elimination of deleterious four-wave mixing noise from Raman memories is critical for practical applications. Here, we demonstrate a quantum memory using the rotational states of hydrogen molecules at room temperature. Polarization selection rules prohibit four-wave mixing, allowing the storage and retrieval of attenuated coherent states with a mean photon number 0.9 and a pulse duration 175 fs. The 1/e memory lifetime is 85.5 ps, demonstrating a time-bandwidth product of ≈480 in a memory that is well suited for use with broadband heralded down-conversion and fiber-based photon sources.

Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories

NASA Astrophysics Data System (ADS)

Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.

2015-10-01

Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. Electronic supplementary information (ESI) available: Energy-dispersive X-ray spectroscopy (EDS) spectra of the metal NPs, SEM image of MoS2 on Au NPs, erasing operations of the metal NPs-MoS2 memory device, transfer characteristics of the standard FET devices and Ag NP devices under programming operation, tapping-mode AFM height image of the fabricated MoS2 film for pristine MoS2 flash memory, gate signals used for programming the Au NPs-MoS2 and Pt NPs-MoS2 flash memories, and data levels recorded for 100 sequential cycles. See DOI: 10.1039/c5nr05054e

Cathodochromic storage device

NASA Technical Reports Server (NTRS)

Bosomworth, D. R.; Moles, W. H.

1969-01-01

A memory and display device has been developed by combing a fast phosphor layer with a cathodochromic layer in a cathode ray tube. Images are stored as patterns of electron beam induced optical density in the cathodo-chromic material. The stored information is recovered by exciting the backing, fast phosphor layer with a constant current electron beam and detecting the emitted radiation which is modulated by absorption in the cathodochromic layer. The storage can be accomplished in one or more TV frames (1/30 sec each). More than 500 TV line resolution and close to 2:1 contrast ratio are possible. The information storage time in a dark environment is approximately 24 hours. A reconstituted (readout) electronic video signal can be generated continuously for times in excess of 10 minutes or periodically for several hours.

Three-terminal resistive switching memory in a transparent vertical-configuration device

NASA Astrophysics Data System (ADS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles

NASA Astrophysics Data System (ADS)

Oh, Sewook; Kim, Minkeun; Kim, Yejin; Jung, Hunsang; Yoon, Tae-Sik; Choi, Young-Jin; Jung Kang, Chi; Moon, Myeong-Ju; Jeong, Yong-Yeon; Park, In-Kyu; Ho Lee, Hyun

2013-08-01

An organic memory structure using monolayered aptamer conjugated gold nanoparticles (Au NPs) as charge storage nodes was demonstrated. Metal-pentacene-insulator-semiconductor device was adopted for the non-volatile memory effect through self assembly monolayer of A10-aptamer conjugated Au NPs, which was formed on functionalized insulator surface with prostate-specific membrane antigen protein. The capacitance versus voltage (C-V) curves obtained for the monolayered Au NPs capacitor exhibited substantial flat-band voltage shift (ΔVFB) or memory window of 3.76 V under (+/-)7 V voltage sweep. The memory device format can be potentially expanded to a highly specific capacitive sensor for the aptamer-specific biomolecule detection.

Terahertz electrical writing speed in an antiferromagnetic memory

PubMed Central

Kašpar, Zdeněk; Campion, Richard P.; Baumgartner, Manuel; Sinova, Jairo; Kužel, Petr; Müller, Melanie; Kampfrath, Tobias

2018-01-01

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band. PMID:29740601

Multimodal properties and dynamics of gradient echo quantum memory.

PubMed

Hétet, G; Longdell, J J; Sellars, M J; Lam, P K; Buchler, B C

2008-11-14

We investigate the properties of a recently proposed gradient echo memory (GEM) scheme for information mapping between optical and atomic systems. We show that GEM can be described by the dynamic formation of polaritons in k space. This picture highlights the flexibility and robustness with regards to the external control of the storage process. Our results also show that, as GEM is a frequency-encoding memory, it can accurately preserve the shape of signals that have large time-bandwidth products, even at moderate optical depths. At higher optical depths, we show that GEM is a high fidelity multimode quantum memory.

Optical reset modulation in the SiO2/Cu conductive-bridge resistive memory stack

NASA Astrophysics Data System (ADS)

Kawashima, T.; Zhou, Y.; Yew, K. S.; Ang, D. S.

2017-09-01

We show that the negative photoconductivity property of the nanoscale filamentary breakdown path in the SiO2 electrolyte of the SiO2/Cu conductive bridge resistive random access memory (CBRAM) stack is affected by the number of positive-voltage sweeps applied to the Cu electrode (with respect to a non-metal counter electrode). The path's photo-response to white light, of a given intensity, is suppressed with an increasing number of applied positive-voltage sweeps. When this occurs, the path may only be disrupted by the light of a higher intensity. It is further shown that the loss of the path's photosensitivity to the light of a given intensity can be recovered using a negative-voltage sweep (which eliminates the path), followed by the reformation of the path by a positive-voltage sweep. The above behavior is, however, not seen in the SiO2/Si stack (which involves a non-metal Si electrode), suggesting that the photo-response modulation effect is related to the Cu electrode. The demonstrated reversible electrical modulation of the path's photo-response may afford greater flexibility in the electro-optical control of the CBRAM device.

Acceleration of FDTD mode solver by high-performance computing techniques.

PubMed

Han, Lin; Xi, Yanping; Huang, Wei-Ping

2010-06-21

A two-dimensional (2D) compact finite-difference time-domain (FDTD) mode solver is developed based on wave equation formalism in combination with the matrix pencil method (MPM). The method is validated for calculation of both real guided and complex leaky modes of typical optical waveguides against the bench-mark finite-difference (FD) eigen mode solver. By taking advantage of the inherent parallel nature of the FDTD algorithm, the mode solver is implemented on graphics processing units (GPUs) using the compute unified device architecture (CUDA). It is demonstrated that the high-performance computing technique leads to significant acceleration of the FDTD mode solver with more than 30 times improvement in computational efficiency in comparison with the conventional FDTD mode solver running on CPU of a standard desktop computer. The computational efficiency of the accelerated FDTD method is in the same order of magnitude of the standard finite-difference eigen mode solver and yet require much less memory (e.g., less than 10%). Therefore, the new method may serve as an efficient, accurate and robust tool for mode calculation of optical waveguides even when the conventional eigen value mode solvers are no longer applicable due to memory limitation.

Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device

NASA Astrophysics Data System (ADS)

Bhattacharjee, Snigdha; Sarkar, Pranab Kumar; Prajapat, Manoj; Roy, Asim

2017-07-01

Molybdenum disulfide (MoS2) is of great interest for its applicability in various optoelectronic devices. Here we report the resistive switching properties of polymethylmethacrylate embedding MoS2 nano-crystals. The devices are developed on an ITO-coated PET substrate with copper as the top electrode. Systematic evaluation of resistive switching parameters, on the basis of MoS2 content, suggests non-volatile memory characteristics. A decent ON/OFF ratio, high retention time and long endurance of 3  ×  103, 105 s and 105 cycles are respectively recorded in a device with 1 weight percent (wt%) of MoS2. The bending cyclic measurements confirm the flexibility of the memory devices with good electrical reliability as well as mechanical stability. In addition, multilevel storage has been demonstrated by controlling the current compliance and span of voltage sweeping in the memory device.

Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS{sub 2} quantum dot-polymethylmethacrylate nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan, E-mail: twk@hanyang.ac.kr

2014-12-08

Nonvolatile memory devices based on CuInS{sub 2} (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10{sup −10} was maintained for 8 × 10{sup 3} cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10{sup 6} cycles converged to 2.40 × 10{sup −10}, indicative ofmore » the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.« less

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

PubMed Central

Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-01-01

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications. PMID:25403772

A dual-stimuli-responsive fluorescent switch ultrathin film

NASA Astrophysics Data System (ADS)

Li, Zhixiong; Liang, Ruizheng; Liu, Wendi; Yan, Dongpeng; Wei, Min

2015-10-01

Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices.Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05376e

Nanogap-Engineerable Electromechanical System for Ultralow Power Memory.

PubMed

Zhang, Jian; Deng, Ya; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiannian; Wu, Pei; Dong, Fengliang; Chen, Peipei; Chu, Weiguo; Zhou, Haiqing; Sun, Lianfeng

2018-02-01

Nanogap engineering of low-dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub-5 nm nanogaped single-walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10 -19 J bit -1 ), ON/OFF ratio of 10 5 , stable switching ON operations, and over 30 h retention time in ambient conditions.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

NASA Astrophysics Data System (ADS)

Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

2014-10-01

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

Nanogap‐Engineerable Electromechanical System for Ultralow Power Memory

PubMed Central

Zhang, Jian; Deng, Ya; Hu, Xiao; Nshimiyimana, Jean Pierre; Liu, Siyu; Chi, Xiannian; Wu, Pei; Dong, Fengliang; Chen, Peipei

2017-01-01

Abstract Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10−19 J bit−1), ON/OFF ratio of 105, stable switching ON operations, and over 30 h retention time in ambient conditions. PMID:29619307

Ordering of guarded and unguarded stores for no-sync I/O

DOEpatents

Gara, Alan; Ohmacht, Martin

2013-06-25

A parallel computing system processes at least one store instruction. A first processor core issues a store instruction. A first queue, associated with the first processor core, stores the store instruction. A second queue, associated with a first local cache memory device of the first processor core, stores the store instruction. The first processor core updates first data in the first local cache memory device according to the store instruction. The third queue, associated with at least one shared cache memory device, stores the store instruction. The first processor core invalidates second data, associated with the store instruction, in the at least one shared cache memory. The first processor core invalidates third data, associated with the store instruction, in other local cache memory devices of other processor cores. The first processor core flushing only the first queue.

Electrically Variable Resistive Memory Devices

NASA Technical Reports Server (NTRS)

Liu, Shangqing; Wu, Nai-Juan; Ignatiev, Alex; Charlson, E. J.

2010-01-01

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Signal and noise extraction from analog memory elements for neuromorphic computing.

PubMed

Gong, N; Idé, T; Kim, S; Boybat, I; Sebastian, A; Narayanan, V; Ando, T

2018-05-29

Dense crossbar arrays of non-volatile memory (NVM) can potentially enable massively parallel and highly energy-efficient neuromorphic computing systems. The key requirements for the NVM elements are continuous (analog-like) conductance tuning capability and switching symmetry with acceptable noise levels. However, most NVM devices show non-linear and asymmetric switching behaviors. Such non-linear behaviors render separation of signal and noise extremely difficult with conventional characterization techniques. In this study, we establish a practical methodology based on Gaussian process regression to address this issue. The methodology is agnostic to switching mechanisms and applicable to various NVM devices. We show tradeoff between switching symmetry and signal-to-noise ratio for HfO 2 -based resistive random access memory. Then, we characterize 1000 phase-change memory devices based on Ge 2 Sb 2 Te 5 and separate total variability into device-to-device variability and inherent randomness from individual devices. These results highlight the usefulness of our methodology to realize ideal NVM devices for neuromorphic computing.

Fast Initialization of Bubble-Memory Systems

NASA Technical Reports Server (NTRS)

Looney, K. T.; Nichols, C. D.; Hayes, P. J.

1986-01-01

Improved scheme several orders of magnitude faster than normal initialization scheme. State-of-the-art commercial bubble-memory device used. Hardware interface designed connects controlling microprocessor to bubblememory circuitry. System software written to exercise various functions of bubble-memory system in comparison made between normal and fast techniques. Future implementations of approach utilize E2PROM (electrically-erasable programable read-only memory) to provide greater system flexibility. Fastinitialization technique applicable to all bubble-memory devices.

Unconditional room-temperature quantum memory

NASA Astrophysics Data System (ADS)

Hosseini, M.; Campbell, G.; Sparkes, B. M.; Lam, P. K.; Buchler, B. C.

2011-10-01

Just as classical information systems require buffers and memory, the same is true for quantum information systems. The potential that optical quantum information processing holds for revolutionizing computation and communication is therefore driving significant research into developing optical quantum memory. A practical optical quantum memory must be able to store and recall quantum states on demand with high efficiency and low noise. Ideally, the platform for the memory would also be simple and inexpensive. Here, we present a complete tomographic reconstruction of quantum states that have been stored in the ground states of rubidium in a vapour cell operating at around 80°C. Without conditional measurements, we show recall fidelity up to 98% for coherent pulses containing around one photon. To unambiguously verify that our memory beats the quantum no-cloning limit we employ state-independent verification using conditional variance and signal-transfer coefficients.

Silicon-based all-optical memory elements for 1.54 μm photonics

NASA Astrophysics Data System (ADS)

Forcales, M.; Gregorkiewicz, T.; Zavada, J. M.

2003-01-01

We present experimental evidence of an optical memory effect in crystalline silicon doped with Er 3+ ions. It is observed at low temperature using two-color experiments in the visible and the mid-infrared (with a free-electron laser). Based on the physical mechanism governing the effect, possibilities for improvement of thermal stability and increase of archival time are discussed. An all-optical all-silicon memory element for use in photonic circuits is proposed.

Novel synaptic memory device for neuromorphic computing

NASA Astrophysics Data System (ADS)

Mandal, Saptarshi; El-Amin, Ammaarah; Alexander, Kaitlyn; Rajendran, Bipin; Jha, Rashmi

2014-06-01

This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm × 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed ~10× reduction in area and >106 times reduction in the power consumption per learning cycle.

From photons to phonons and back: a THz optical memory in diamond.

PubMed

England, D G; Bustard, P J; Nunn, J; Lausten, R; Sussman, B J

2013-12-13

Optical quantum memories are vital for the scalability of future quantum technologies, enabling long-distance secure communication and local synchronization of quantum components. We demonstrate a THz-bandwidth memory for light using the optical phonon modes of a room temperature diamond. This large bandwidth makes the memory compatible with down-conversion-type photon sources. We demonstrate that four-wave mixing noise in this system is suppressed by material dispersion. The resulting noise floor is just 7×10(-3) photons per pulse, which establishes that the memory is capable of storing single quanta. We investigate the principle sources of noise in this system and demonstrate that high material dispersion can be used to suppress four-wave mixing noise in Λ-type systems.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

NASA Astrophysics Data System (ADS)

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-07-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Development of Curie point switching for thin film, random access, memory device

NASA Technical Reports Server (NTRS)

Lewicki, G. W.; Tchernev, D. I.

1967-01-01

Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials.

PubMed

Li, Yang; Li, Hua; He, Jinghui; Xu, Qingfeng; Li, Najun; Chen, Dongyun; Lu, Jianmei

2016-03-18

The practical application of organic memory devices requires low power consumption and reliable device quality. Herein, we report that inserting thienyl units into D-π-A molecules can improve these parameters by tuning the texture of the film. Theoretical calculations revealed that introducing thienyl π bridges increased the planarity of the molecular backbone and extended the D-A conjugation. Thus, molecules with more thienyl spacers showed improved stacking and orientation in the film state relative to the substrates. The corresponding sandwiched memory devices showed enhanced ternary memory behavior, with lower threshold voltages and better repeatability. The conductive switching and variation in the performance of the memory devices were interpreted by using an extended-charge-trapping mechanism. Our study suggests that judicious molecular engineering can facilitate control of the orientation of the crystallite in the solid state to achieve superior multilevel memory performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide

NASA Astrophysics Data System (ADS)

Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

2009-04-01

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 × 10-13-1.0 × 10-14 S cm-1. The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 1010. Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 1011. The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

PubMed

Lee, Taek Joon; Chang, Cha-Wen; Hahm, Suk Gyu; Kim, Kyungtae; Park, Samdae; Kim, Dong Min; Kim, Jinchul; Kwon, Won-Sang; Liou, Guey-Sheng; Ree, Moonhor

2009-04-01

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 x 10(-13)-1.0 x 10(-14) S cm(-1). The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 10(10). Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 10(11). The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

NASA Astrophysics Data System (ADS)

Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

2014-11-01

Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

Low latency counter event indication

DOEpatents

Gara, Alan G [Mount Kisco, NY; Salapura, Valentina [Chappaqua, NY

2008-09-16

A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

Low latency counter event indication

DOEpatents

Gara, Alan G.; Salapura, Valentina

2010-08-24

A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

Resistive switching behaviors of Au/pentacene/Si-nanowire arrays/heavily doped n-type Si devices for memory applications

NASA Astrophysics Data System (ADS)

Tsao, Hou-Yen; Lin, Yow-Jon

2014-02-01

The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n+-Si), Au/pentacene/Si nanowires (SiNWs)/n+-Si, and Au/pentacene/H2O2-treated SiNWs/n+-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n+-Si devices show hysteresis behavior. H2O2 treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n+-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices.

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

All-optical coherent population trapping with defect spin ensembles in silicon carbide.

PubMed

Zwier, Olger V; O'Shea, Danny; Onur, Alexander R; van der Wal, Caspar H

2015-06-05

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state.

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber.

PubMed

Pradhan, Rajib

2014-06-10

This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

Optimal proximity correction: application for flash memory design

NASA Astrophysics Data System (ADS)

Chen, Y. O.; Huang, D. L.; Sung, K. T.; Chiang, J. J.; Yu, M.; Teng, F.; Chu, Lung; Rey, Juan C.; Bernard, Douglas A.; Li, Jiangwei; Li, Junling; Moroz, V.; Boksha, Victor V.

1998-06-01

Proximity Correction is the technology for which the most of IC manufacturers are committed already. The final intended result of correction is affected by many factors other than the optical characteristics of the mask-stepper system, such as photoresist exposure, post-exposure bake and development parameters, etch selectivity and anisotropy, and underlying topography. The most advanced industry and research groups already reported immediate need to consider wafer topography as one of the major components during a Proximity Correction procedure. In the present work we are discussing the corners rounding effect (which eventually cause electrical leakage) observed for the elements of Poly2 layer for a Flash Memory Design. It was found that the rounding originated by three- dimensional effects due to variation of photoresist thickness resulting from the non-planar substrate. Our major goal was to understand the reasons and correct corner rounding. As a result of this work highly effective layout correction methodology was demonstrated and manufacturable Depth Of Focus was achieved. Another purpose of the work was to demonstrate complete integration flow for a Flash Memory Design based on photolithography; deposition/etch; ion implantation/oxidation/diffusion; and device simulators.

Thickness effect of nickel oxide thin films on associated solution-processed write-once-read-many-times memory devices

NASA Astrophysics Data System (ADS)

Wang, Xiao Lin; Liu, Zhen; Wen, Chao; Liu, Yang; Wang, Hong Zhe; Chen, T. P.; Zhang, Hai Yan

2018-06-01

With self-prepared nickel acetate based solution, NiO thin films with different thicknesses have been fabricated by spin coating followed by thermal annealing. By forming a two-terminal Ag/NiO/ITO structure on glass, write-once-read-many-times (WORM) memory devices are realized. The WORM memory behavior is based on a permanent switching from an initial high-resistance state (HRS) to an irreversible low-resistance state (LRS) under the application of a writing voltage, due to the formation of a solid bridge across Ag and ITO electrodes by conductive filaments (CFs). The memory performance is investigated as a function of the NiO film thickness, which is determined by the number of spin-coated NiO layers. For devices with 4 and 6 NiO layers, data retention up to 104 s and endurance of 103 reading operations in the measurement range have been obtained with memory window maintained above four orders for both HRS and LRS. Before and after writing, the devices show the hopping and ohmic conduction behaviors, respectively, confirming that the CF formation could be the mechanism responsible for writing in the WORM memory devices.

Automatic weld torch guidance control system

NASA Technical Reports Server (NTRS)

Smaith, H. E.; Wall, W. A.; Burns, M. R., Jr.

1982-01-01

A highly reliable, fully digital, closed circuit television optical, type automatic weld seam tracking control system was developed. This automatic tracking equipment is used to reduce weld tooling costs and increase overall automatic welding reliability. The system utilizes a charge injection device digital camera which as 60,512 inidividual pixels as the light sensing elements. Through conventional scanning means, each pixel in the focal plane is sequentially scanned, the light level signal digitized, and an 8-bit word transmitted to scratch pad memory. From memory, the microprocessor performs an analysis of the digital signal and computes the tracking error. Lastly, the corrective signal is transmitted to a cross seam actuator digital drive motor controller to complete the closed loop, feedback, tracking system. This weld seam tracking control system is capable of a tracking accuracy of + or - 0.2 mm, or better. As configured, the system is applicable to square butt, V-groove, and lap joint weldments.

Quantum Storage of Three-Dimensional Orbital-Angular-Momentum Entanglement in a Crystal.

PubMed

Zhou, Zong-Quan; Hua, Yi-Lin; Liu, Xiao; Chen, Geng; Xu, Jin-Shi; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2015-08-14

Here we present the quantum storage of three-dimensional orbital-angular-momentum photonic entanglement in a rare-earth-ion-doped crystal. The properties of the entanglement and the storage process are confirmed by the violation of the Bell-type inequality generalized to three dimensions after storage (S=2.152±0.033). The fidelity of the memory process is 0.993±0.002, as determined through complete quantum process tomography in three dimensions. An assessment of the visibility of the stored weak coherent pulses in higher-dimensional spaces demonstrates that the memory is highly reliable for 51 spatial modes. These results pave the way towards the construction of high-dimensional and multiplexed quantum repeaters based on solid-state devices. The multimode capacity of rare-earth-based optical processors goes beyond the temporal and the spectral degree of freedom, which might provide a useful tool for photonic information processing.

Fabrication of cross-shaped Cu-nanowire resistive memory devices using a rapid, scalable, and designable inorganic-nanowire-digital-alignment technique (Conference Presentation)

NASA Astrophysics Data System (ADS)

Xu, Wentao; Lee, Yeongjun; Min, Sung-Yong; Park, Cheolmin; Lee, Tae-Woo

2016-09-01

Resistive random-access memory (RRAM) is a candidate next generation nonvolatile memory due to its high access speed, high density and ease of fabrication. Especially, cross-point-access allows cross-bar arrays that lead to high-density cells in a two-dimensional planar structure. Use of such designs could be compatible with the aggressive scaling down of memory devices, but existing methods such as optical or e-beam lithographic approaches are too complicated. One-dimensional inorganic nanowires (i-NWs) are regarded as ideal components of nanoelectronics to circumvent the limitations of conventional lithographic approaches. However, post-growth alignment of these i-NWs precisely on a large area with individual control is still a difficult challenge. Here, we report a simple, inexpensive, and rapid method to fabricate two-dimensional arrays of perpendicularly-aligned, individually-conductive Cu-NWs with a nanometer-scale CuxO layer sandwiched at each cross point, by using an inorganic-nanowire-digital-alignment technique (INDAT) and a one-step reduction process. In this approach, the oxide layer is self-formed and patterned, so conventional deposition and lithography are not necessary. INDAT eliminates the difficulties of alignment and scalable fabrication that are encountered when using currently-available techniques that use inorganic nanowires. This simple process facilitates fabrication of cross-point nonvolatile memristor arrays. Fabricated arrays had reproducible resistive switching behavior, high on/off current ratio (Ion/Ioff) 10 6 and extensive cycling endurance. This is the first report of memristors with the resistive switching oxide layer self-formed, self-patterned and self-positioned; we envision that the new features of the technique will provide great opportunities for future nano-electronic circuits.

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

PubMed Central

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valentini, L., E-mail: luca.valentini@unipg.it; Cardinali, M.; Fortunati, E.

2014-10-13

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electricmore » field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.« less

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

PubMed

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

Investigation of fast initialization of spacecraft bubble memory systems

NASA Technical Reports Server (NTRS)

Looney, K. T.; Nichols, C. D.; Hayes, P. J.

1984-01-01

Bubble domain technology offers significant improvement in reliability and functionality for spacecraft onboard memory applications. In considering potential memory systems organizations, minimization of power in high capacity bubble memory systems necessitates the activation of only the desired portions of the memory. In power strobing arbitrary memory segments, a capability of fast turn on is required. Bubble device architectures, which provide redundant loop coding in the bubble devices, limit the initialization speed. Alternate initialization techniques are investigated to overcome this design limitation. An initialization technique using a small amount of external storage is demonstrated.

Radiation Test Challenges for Scaled Commerical Memories

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Ladbury, Ray L.; Cohn, Lewis M.; Oldham, Timothy

2007-01-01

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials.

PubMed

Zhou, Li; Mao, Jingyu; Ren, Yi; Han, Su-Ting; Roy, Vellaisamy A L; Zhou, Ye

2018-03-01

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Moore's law realities for recording systems and memory storage components: HDD, tape, NAND, and optical

NASA Astrophysics Data System (ADS)

Fontana, Robert E.; Decad, Gary M.

2018-05-01

This paper describes trends in the storage technologies associated with Linear Tape Open (LTO) Tape cartridges, hard disk drives (HDD), and NAND Flash based storage devices including solid-state drives (SSD). This technology discussion centers on the relationship between cost/bit and bit density and, specifically on how the Moore's Law perception that areal density doubling and cost/bit halving every two years is no longer being achieved for storage based components. This observation and a Moore's Law Discussion are demonstrated with data from 9-year storage technology trends, assembled from publically available industry reporting sources.

Computer driven optical keratometer and method of evaluating the shape of the cornea

NASA Technical Reports Server (NTRS)

Baroth, Edmund C. (Inventor); Mouneimme, Samih A. (Inventor)

1994-01-01

An apparatus and method for measuring the shape of the cornea utilize only one reticle to generate a pattern of rings projected onto the surface of a subject's eye. The reflected pattern is focused onto an imaging device such as a video camera and a computer compares the reflected pattern with a reference pattern stored in the computer's memory. The differences between the reflected and stored patterns are used to calculate the deformation of the cornea which may be useful for pre-and post-operative evaluation of the eye by surgeons.

Holographic optical disc

NASA Astrophysics Data System (ADS)

Zhou, Gan; An, Xin; Pu, Allen; Psaltis, Demetri; Mok, Fai H.

1999-11-01

The holographic disc is a high capacity, disk-based data storage device that can provide the performance for next generation mass data storage needs. With a projected capacity approaching 1 terabit on a single 12 cm platter, the holographic disc has the potential to become a highly efficient storage hardware for data warehousing applications. The high readout rate of holographic disc makes it especially suitable for generating multiple, high bandwidth data streams such as required for network server computers. Multimedia applications such as interactive video and HDTV can also potentially benefit from the high capacity and fast data access of holographic memory.

Auto and hetero-associative memory using a 2-D optical logic gate

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin (Inventor)

1992-01-01

An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

Optical interconnection network for parallel access to multi-rank memory in future computing systems.

PubMed

Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

2015-08-10

With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent.

Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-Change Nanostructures with an Extremely Low Switching Current

DOE PAGES

Park, Woon Ik; Kim, Jong Min; Jeong, Jae Won; ...

2015-03-17

Phase change memory (PCM) is one of the most promising candidates for next-generation nonvolatile memory devices because of its high speed, excellent reliability, and outstanding scalability. But, the high switching current of PCM devices has been a critical hurdle to realize low-power operation. Although one solution is to reduce the switching volume of the memory, the resolution limit of photolithography hinders further miniaturization of device dimensions. Here, we employed unconventional self-assembly geometries obtained from blends of block copolymers (BCPs) to form ring-shaped hollow PCM nanostructures with an ultrasmall contact area between a phase-change material (Ge 2Sb 2Te 5) and amore » heater (TiN) electrode. The high-density (approximately 0.1 terabits per square inch) PCM nanoring arrays showed extremely small switching current of 2-3 mu A. Furthermore, the relatively small reset current of the ring-shaped PCM compared to the pillar-shaped devices is attributed to smaller switching volume, which is well supported by electro-thermal simulation results. Our approach may also be extended to other nonvolatile memory device applications such as resistive switching memory and magnetic storage devices, where the control of nanoscale geometry can significantly affect device performances.« less

Real-time determination of fringe pattern frequencies: An application to pressure measurement

NASA Astrophysics Data System (ADS)

Sciammarella, Cesar A.; Piroozan, Parham

2007-05-01

Retrieving information in real time from fringe patterns is a topic of a great deal of interest in scientific and engineering applications of optical methods. This paper presents a method for fringe frequency determination based on the capability of neural networks to recognize signals that are similar but not identical to signals used to train the neural network. Sampled patterns are generated by calibration and stored in memory. Incoming patterns are analyzed by a back-propagation neural network at the speed of the recording device, a CCD camera. This method of information retrieval is utilized to measure pressures on a boundary layer flow. The sensor combines optics and electronics to analyze dynamic pressure distributions and to feed information to a control system that is capable to preserve the stability of the flow.

Setting a disordered password on a photonic memory

NASA Astrophysics Data System (ADS)

Su, Shih-Wei; Gou, Shih-Chuan; Chew, Lock Yue; Chang, Yu-Yen; Yu, Ite A.; Kalachev, Alexey; Liao, Wen-Te

2017-06-01

An all-optical method of setting a disordered password on different schemes of photonic memory is theoretically studied. While photons are regarded as ideal information carriers, it is imperative to implement such data protection on all-optical storage. However, we wish to address the intrinsic risk of data breaches in existing schemes of photonic memory. We theoretically demonstrate a protocol using spatially disordered laser fields to encrypt data stored on an optical memory, namely, encrypted photonic memory. To address the broadband storage, we also investigate a scheme of disordered echo memory with a high fidelity approaching unity. The proposed method increases the difficulty for the eavesdropper to retrieve the stored photon without the preset password even when the randomized and stored photon state is nearly perfectly cloned. Our results pave ways to significantly reduce the exposure of memories, required for long-distance communication, to eavesdropping and therefore restrict the optimal attack on communication protocols. The present scheme also increases the sensitivity of detecting any eavesdropper and so raises the security level of photonic information technology.

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

PubMed

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material asmore » well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.« less

Multi-port, optically addressed RAM

NASA Technical Reports Server (NTRS)

Johnston, Alan R. (Inventor); Nixon, Robert H. (Inventor); Bergman, Larry A. (Inventor); Esener, Sadik (Inventor)

1989-01-01

A random access memory addressing system utilizing optical links between memory and the read/write logic circuits comprises addressing circuits including a plurality of light signal sources, a plurality of optical gates including optical detectors associated with the memory cells, and a holographic optical element adapted to reflect and direct the light signals to the desired memory cell locations. More particularly, it is a multi-port, binary computer memory for interfacing with a plurality of computers. There are a plurality of storage cells for containing bits of binary information, the storage cells being disposed at the intersections of a plurality of row conductors and a plurality of column conductors. There is interfacing logic for receiving information from the computers directing access to ones of the storage cells. There are first light sources associated with the interfacing logic for transmitting a first light beam with the access information modulated thereon. First light detectors are associated with the storage cells for receiving the first light beam, for generating an electrical signal containing the access information, and for conducting the electrical signal to the one of the storage cells to which it is directed. There are holographic optical elements for reflecting the first light beam from the first light sources to the first light detectors.

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

NASA Technical Reports Server (NTRS)

Besser, P. J.

1976-01-01

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers.

Device and methods for writing and erasing analog information in small memory units via voltage pulses

DOEpatents

El Gabaly Marquez, Farid; Talin, Albert Alec

2018-04-17

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Short-term memory to long-term memory transition in a nanoscale memristor.

PubMed

Chang, Ting; Jo, Sung-Hyun; Lu, Wei

2011-09-27

"Memory" is an essential building block in learning and decision-making in biological systems. Unlike modern semiconductor memory devices, needless to say, human memory is by no means eternal. Yet, forgetfulness is not always a disadvantage since it releases memory storage for more important or more frequently accessed pieces of information and is thought to be necessary for individuals to adapt to new environments. Eventually, only memories that are of significance are transformed from short-term memory into long-term memory through repeated stimulation. In this study, we show experimentally that the retention loss in a nanoscale memristor device bears striking resemblance to memory loss in biological systems. By stimulating the memristor with repeated voltage pulses, we observe an effect analogous to memory transition in biological systems with much improved retention time accompanied by additional structural changes in the memristor. We verify that not only the shape or the total number of stimuli is influential, but also the time interval between stimulation pulses (i.e., the stimulation rate) plays a crucial role in determining the effectiveness of the transition. The memory enhancement and transition of the memristor device was explained from the microscopic picture of impurity redistribution and can be qualitatively described by the same equations governing biological memories. © 2011 American Chemical Society

Light storage in a cold atomic ensemble with a high optical depth

NASA Astrophysics Data System (ADS)

Park, Kwang-Kyoon; Chough, Young-Tak; Kim, Yoon-Ho

2017-06-01

A quantum memory with a high storage efficiency and a long coherence time is an essential element in quantum information applications. Here, we report our recent development of an optical quantum memory with a rubidium-87 cold atom ensemble. By increasing the optical depth of the medium, we have achieved a storage efficiency of 65% and a coherence time of 51 μs for a weak laser pulse. The result of a numerical analysis based on the Maxwell-Bloch equations agrees well with the experimental results. Our result paves the way toward an efficient optical quantum memory and may find applications in photonic quantum information processing.

Precision spectral manipulation of optical pulses using a coherent photon echo memory.

PubMed

Buchler, B C; Hosseini, M; Hétet, G; Sparkes, B M; Lam, P K

2010-04-01

Photon echo schemes are excellent candidates for high efficiency coherent optical memory. They are capable of high-bandwidth multipulse storage, pulse resequencing and have been shown theoretically to be compatible with quantum information applications. One particular photon echo scheme is the gradient echo memory (GEM). In this system, an atomic frequency gradient is induced in the direction of light propagation leading to a Fourier decomposition of the optical spectrum along the length of the storage medium. This Fourier encoding allows precision spectral manipulation of the stored light. In this Letter, we show frequency shifting, spectral compression, spectral splitting, and fine dispersion control of optical pulses using GEM.

Optical Associative Memory Model With Threshold Modification Using Complementary Vector

NASA Astrophysics Data System (ADS)

Bian, Shaoping; Xu, Kebin; Hong, Jing

1989-02-01

A new criterion to evaluate the similarity between two vectors in associative memory is presented. According to it, an experimental research about optical associative memory model with threshold modification using complementary vector is carried out. This model is capable of eliminating the posibility to recall erroneously. Therefore the accuracy of reading out is improved.

Shape memory polymer actuator and catheter

DOEpatents

Maitland, Duncan J.; Lee, Abraham P.; Schumann, Daniel L.; Matthews, Dennis L.; Decker, Derek E.; Jungreis, Charles A.

2004-05-25

An actuator system is provided for acting upon a material in a vessel. The system includes an optical fiber and a shape memory polymer material operatively connected to the optical fiber. The shape memory polymer material is adapted to move from a first shape for moving through said vessel to a second shape where it can act upon said material.

Shape memory polymer actuator and catheter

DOEpatents

Maitland, Duncan J.; Lee, Abraham P.; Schumann, Daniel L.; Matthews, Dennis L.; Decker, Derek E.; Jungreis, Charles A.

2007-11-06

An actuator system is provided for acting upon a material in a vessel. The system includes an optical fiber and a shape memory polymer material operatively connected to the optical fiber. The shape memory polymer material is adapted to move from a first shape for moving through said vessel to a second shape where it can act upon said material.

Functional carbon nitride materials — design strategies for electrochemical devices

NASA Astrophysics Data System (ADS)

Kessler, Fabian K.; Zheng, Yun; Schwarz, Dana; Merschjann, Christoph; Schnick, Wolfgang; Wang, Xinchen; Bojdys, Michael J.

2017-06-01

In the past decade, research in the field of artificial photosynthesis has shifted from simple, inorganic semiconductors to more abundant, polymeric materials. For example, polymeric carbon nitrides have emerged as promising materials for metal-free semiconductors and metal-free photocatalysts. Polymeric carbon nitride (melon) and related carbon nitride materials are desirable alternatives to industrially used catalysts because they are easily synthesized from abundant and inexpensive starting materials. Furthermore, these materials are chemically benign because they do not contain heavy metal ions, thereby facilitating handling and disposal. In this Review, we discuss the building blocks of carbon nitride materials and examine how strategies in synthesis, templating and post-processing translate from the molecular level to macroscopic properties, such as optical and electronic bandgap. Applications of carbon nitride materials in bulk heterojunctions, laser-patterned memory devices and energy storage devices indicate that photocatalytic overall water splitting on an industrial scale may be realized in the near future and reveal a new avenue of 'post-silicon electronics'.

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

NASA Electronic Parts and Packaging (NEPP) Program - Update

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Sampson, Michael J.

2010-01-01

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

Origin of Reversible Photoinduced Phase Separation in Hybrid Perovskites

NASA Astrophysics Data System (ADS)

Bischak, Connor G.; Hetherington, Craig L.; Wu, Hao; Aloni, Shaul; Ogletree, D. Frank; Limmer, David T.; Ginsberg, Naomi S.

2017-02-01

Nonequilibrium processes occurring in functional materials can significantly impact device efficiencies and are often difficult to characterize due to the broad range of length and time scales involved. In particular, mixed halide hybrid perovskites are promising for optoelectronics, yet the halides reversibly phase separate when photo-excited, significantly altering device performance. By combining nanoscale imaging and multiscale modeling, we elucidate the mechanism underlying this phenomenon, demonstrating that local strain induced by photo-generated polarons promotes halide phase separation and leads to nucleation of light-stabilized iodide-rich clusters. This effect relies on the unique electromechanical properties of hybrid materials, characteristic of neither their organic nor inorganic constituents alone. Exploiting photo-induced phase separation and other nonequilibrium phenomena in hybrid materials, generally, could enable new opportunities for expanding the functional applications in sensing, photoswitching, optical memory, and energy storage.

From dead leaves to sustainable organic resistive switching memory.

PubMed

Sun, Bai; Zhu, Shouhui; Mao, Shuangsuo; Zheng, Pingping; Xia, Yudong; Yang, Feng; Lei, Ming; Zhao, Yong

2018-03-01

An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment. Copyright © 2017 Elsevier Inc. All rights reserved.

Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

NASA Astrophysics Data System (ADS)

Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

2018-05-01

A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices.

PubMed

Maiti, Dilip K; Debnath, Sudipto; Nawaz, Sk Masum; Dey, Bapi; Dinda, Enakhi; Roy, Dipanwita; Ray, Sudipta; Mallik, Abhijit; Hussain, Syed A

2017-10-17

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

PubMed Central

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-01-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

PubMed

Prakash, Amit; Maikap, Siddheswar; Banerjee, Writam; Jana, Debanjan; Lai, Chao-Sung

2013-09-06

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

NASA Astrophysics Data System (ADS)

Younis, Adnan; Chu, Dewei; Li, Sean

2015-09-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

PubMed Central

Younis, Adnan; Chu, Dewei; Li, Sean

2015-01-01

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective. PMID:26324073

Operation mode switchable charge-trap memory based on few-layer MoS2

NASA Astrophysics Data System (ADS)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

2005-06-14

A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

Optics in engineering education: stimulating the interest of first-year students

NASA Astrophysics Data System (ADS)

Blanco-García, Jesús; Vazquez-Dorrío, Benito

2014-07-01

The work here presented deals with stimulating the interest for optics in first-year students of an Engineering School, which are not specifically following Optical Engineering studies. Optic-based technologies are nowadays wide spread, and growing, in almost all the engineering fields (from non destructive testing or alignments to power laser applications, fiber optic communications, memory devices, etc.). In general, the first year curriculum doesn't allow a detailed review of the main light properties, least its technical applications. We present in this paper our experience in showing some basic optic concepts and related technologies to the students of our school. Based on the fact that they have a very basic training in this branch of physics, we have designed a series of experimental demonstrations with the dual purpose of making them understand the basic principles of these technologies, and to know the potential of applications to engineering they offer. We assembled these experiments in the laboratory and invited students to pass to get to know them, giving them an explanation in which we focused on the possible range of application of each technique. The response was very good, not only by the number of students who attended the invitation but also by the interest demonstrated by their questions and opinions.

Optical waveguides with memory effect using photochromic material for neural network

NASA Astrophysics Data System (ADS)

Tanimoto, Keisuke; Amemiya, Yoshiteru; Yokoyama, Shin

2018-04-01

An optical neural network using a waveguide with a memory effect, a photodiode, CMOS circuits and LEDs was proposed. To realize the neural network, optical waveguides with a memory effect were fabricated using a cladding layer containing the photochromic material “diarylethene”. The transmittance of green light was decreased by UV light irradiation and recovered by the passage of green light through the waveguide. It was confirmed that the transmittance versus total energy of the green light that passed through the waveguide well fit the universal exponential curve.

Optical signal splitting and chirping device modeling

NASA Astrophysics Data System (ADS)

Vinogradova, Irina L.; Andrianova, Anna V.; Meshkov, Ivan K.; Sultanov, Albert Kh.; Abdrakhmanova, Guzel I.; Grakhova, Elizaveta P.; Ishmyarov, Arsen A.; Yantilina, Liliya Z.; Kutlieva, Gulnaz R.

2017-04-01

This article examines the devices for optical signal splitting and chirping device modeling. Models with splitting and switching functions are taken into consideration. The described device for optical signal splitting and chirping represents interferential splitter with profiled mixer which provides allocation of correspondent spectral component from ultra wide band frequency diapason, and signal phase shift for aerial array (AA) directive diagram control. This paper proposes modeling for two types of devices for optical signal splitting and chirping: the interference-type optical signal splitting and chirping device and the long-distance-type optical signal splitting and chirping device.

Virtex-5QV Self Scrubber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojahn, Christopher K.

2015-10-20

This HDL code (hereafter referred to as "software") implements circuitry in Xilinx Virtex-5QV Field Programmable Gate Array (FPGA) hardware. This software allows the device to self-check the consistency of its own configuration memory for radiation-induced errors. The software then provides the capability to correct any single-bit errors detected in the memory using the device's inherent circuitry, or reload corrupted memory frames when larger errors occur that cannot be corrected with the device's built-in error correction and detection scheme.

Application of graphene oxide-poly (vinyl alcohol) polymer nanocomposite for memory devices

NASA Astrophysics Data System (ADS)

Kaushal, Jyoti; Kaur, Ravneet; Sharma, Jadab; Tripathi, S. K.

2018-05-01

Significant attention has been gained by polymer nanocomposites because of their possible demands in future electronic memory devices. In the present work, device based on Graphene Oxide (GO) and polyvinyl alcohol (PVA) has been made and examined for the memory device application. The prepared Graphene oxide (GO) and GO-PVA nanocomposite (NC) has been characterized by X-ray Diffraction (XRD). GO nanosheets show the diffraction peak at 2θ = 11.60° and the interlayer spacing of 0.761 nm. The XRD of GO-PVA NC shows the diffraction peak at 2θ =18.56°. The fabricated device shows bipolar switching behavior having ON/OFF current ratio ˜102. The Write-Read-Erase-Read (WRER) cycles test shows that the Al/GO-PVA/Ag device has good stability and repeatability.

Automatic disease diagnosis using optimised weightless neural networks for low-power wearable devices

PubMed Central

Edla, Damodar Reddy; Kuppili, Venkatanareshbabu; Dharavath, Ramesh; Beechu, Nareshkumar Reddy

2017-01-01

Low-power wearable devices for disease diagnosis are used at anytime and anywhere. These are non-invasive and pain-free for the better quality of life. However, these devices are resource constrained in terms of memory and processing capability. Memory constraint allows these devices to store a limited number of patterns and processing constraint provides delayed response. It is a challenging task to design a robust classification system under above constraints with high accuracy. In this Letter, to resolve this problem, a novel architecture for weightless neural networks (WNNs) has been proposed. It uses variable sized random access memories to optimise the memory usage and a modified binary TRIE data structure for reducing the test time. In addition, a bio-inspired-based genetic algorithm has been employed to improve the accuracy. The proposed architecture is experimented on various disease datasets using its software and hardware realisations. The experimental results prove that the proposed architecture achieves better performance in terms of accuracy, memory saving and test time as compared to standard WNNs. It also outperforms in terms of accuracy as compared to conventional neural network-based classifiers. The proposed architecture is a powerful part of most of the low-power wearable devices for the solution of memory, accuracy and time issues. PMID:28868148

Non-stationary and relaxation phenomena in cavity-assisted quantum memories

NASA Astrophysics Data System (ADS)

Veselkova, N. G.; Sokolov, I. V.

2017-12-01

We investigate the non-stationary and relaxation phenomena in cavity-assisted quantum memories for light. As a storage medium we consider an ensemble of cold atoms with standard Lambda-scheme of working levels. Some theoretical aspects of the problem were treated previously by many authors, and recent experiments stimulate more deep insight into the ultimate ability and limitations of the device. Since quantum memories can be used not only for the storage of quantum information, but also for a substantial manipulation of ensembles of quantum states, the speed of such manipulation and hence the ability to write and retrieve the signals of relatively short duration becomes important. In our research we do not apply the so-called bad cavity limit, and consider the memory operation of the signals whose duration is not much larger than the cavity field lifetime, accounting also for the finite lifetime of atomic coherence. In our paper we present an effective approach that makes it possible to find the non-stationary amplitude and phase behavior of strong classical control field, that matches the desirable time profile of both the envelope and the phase of the retrieved quantized signal. The phase properties of the retrieved quantized signals are of importance for the detection and manipulation of squeezing, entanglement, etc by means of optical mixing and homodyning.

Adaptive sampler

DOEpatents

Watson, B.L.; Aeby, I.

1980-08-26

An adaptive data compression device for compressing data is described. The device has a frequency content, including a plurality of digital filters for analyzing the content of the data over a plurality of frequency regions, a memory, and a control logic circuit for generating a variable rate memory clock corresponding to the analyzed frequency content of the data in the frequency region and for clocking the data into the memory in response to the variable rate memory clock.

In-memory interconnect protocol configuration registers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Kevin Y.; Roberts, David A.

Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mappingmore » decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.« less

Computer hardware for radiologists: Part 2

PubMed Central

Indrajit, IK; Alam, A

2010-01-01

Computers are an integral part of modern radiology equipment. In the first half of this two-part article, we dwelt upon some fundamental concepts regarding computer hardware, covering components like motherboard, central processing unit (CPU), chipset, random access memory (RAM), and memory modules. In this article, we describe the remaining computer hardware components that are of relevance to radiology. “Storage drive” is a term describing a “memory” hardware used to store data for later retrieval. Commonly used storage drives are hard drives, floppy drives, optical drives, flash drives, and network drives. The capacity of a hard drive is dependent on many factors, including the number of disk sides, number of tracks per side, number of sectors on each track, and the amount of data that can be stored in each sector. “Drive interfaces” connect hard drives and optical drives to a computer. The connections of such drives require both a power cable and a data cable. The four most popular “input/output devices” used commonly with computers are the printer, monitor, mouse, and keyboard. The “bus” is a built-in electronic signal pathway in the motherboard to permit efficient and uninterrupted data transfer. A motherboard can have several buses, including the system bus, the PCI express bus, the PCI bus, the AGP bus, and the (outdated) ISA bus. “Ports” are the location at which external devices are connected to a computer motherboard. All commonly used peripheral devices, such as printers, scanners, and portable drives, need ports. A working knowledge of computers is necessary for the radiologist if the workflow is to realize its full potential and, besides, this knowledge will prepare the radiologist for the coming innovations in the ‘ever increasing’ digital future. PMID:21423895

Opportunities for nonvolatile memory systems in extreme-scale high-performance computing

DOE PAGES

Vetter, Jeffrey S.; Mittal, Sparsh

2015-01-12

For extreme-scale high-performance computing systems, system-wide power consumption has been identified as one of the key constraints moving forward, where DRAM main memory systems account for about 30 to 50 percent of a node's overall power consumption. As the benefits of device scaling for DRAM memory slow, it will become increasingly difficult to keep memory capacities balanced with increasing computational rates offered by next-generation processors. However, several emerging memory technologies related to nonvolatile memory (NVM) devices are being investigated as an alternative for DRAM. Moving forward, NVM devices could offer solutions for HPC architectures. Researchers are investigating how to integratemore » these emerging technologies into future extreme-scale HPC systems and how to expose these capabilities in the software stack and applications. In addition, current results show several of these strategies could offer high-bandwidth I/O, larger main memory capacities, persistent data structures, and new approaches for application resilience and output postprocessing, such as transaction-based incremental checkpointing and in situ visualization, respectively.« less

Coherent Spin Control at the Quantum Level in an Ensemble-Based Optical Memory.

PubMed

Jobez, Pierre; Laplane, Cyril; Timoney, Nuala; Gisin, Nicolas; Ferrier, Alban; Goldner, Philippe; Afzelius, Mikael

2015-06-12

Long-lived quantum memories are essential components of a long-standing goal of remote distribution of entanglement in quantum networks. These can be realized by storing the quantum states of light as single-spin excitations in atomic ensembles. However, spin states are often subjected to different dephasing processes that limit the storage time, which in principle could be overcome using spin-echo techniques. Theoretical studies suggest this to be challenging due to unavoidable spontaneous emission noise in ensemble-based quantum memories. Here, we demonstrate spin-echo manipulation of a mean spin excitation of 1 in a large solid-state ensemble, generated through storage of a weak optical pulse. After a storage time of about 1 ms we optically read-out the spin excitation with a high signal-to-noise ratio. Our results pave the way for long-duration optical quantum storage using spin-echo techniques for any ensemble-based memory.

A study on carbon nanotube bridge as a electromechanical memory device

NASA Astrophysics Data System (ADS)

Kang, Jeong Won; Ha Lee, Jun; Joo Lee, Hoong; Hwang, Ho Jung

2005-04-01

A nanoelectromechanical (NEM) nanotube random access memory (NRAM) device based on carbon nanotube (CNT) was investigated using atomistic simulations. For the CNT-based NEM memory, the mechanical properties of the CNT-bridge and van der Waals interactions between the CNT-bridge and substrate were very important. The critical amplitude of the CNT-bridge was 16% of the length of the CNT-bridge. As molecular dynamics time increased, the CNT-bridge went to the steady state under the electrostatic force with the damping of the potential and the kinetic energies of the CNT-bridge. The interatomic interaction between the CNT-bridge and substrate, value of the CNT-bridge slack, and damping rate of the CNT-bridge were very important for the operation of the NEM memory device as a nonvolatile memory.

Magneto-optical studies of quantum dots

NASA Astrophysics Data System (ADS)

Russ, Andreas Hans

Significant effort in condensed matter physics has recently been devoted to the field of "spintronics" which seeks to utilize the spin degree of freedom of electrons. Unlike conventional electronics that rely on the electron charge, devices exploiting their spin have the potential to yield new and novel technological applications, including spin transistors, spin filters, and spin-based memory devices. Any such application has the following essential requirements: 1) Efficient electrical injection of spin-polarized carriers; 2) Long spin lifetimes; 3) Ability to control and manipulate electron spins; 4) Effective detection of spin-polarized carriers. Recent work has demonstrated efficient electrical injection from ferromagnetic contacts such as Fe and MnAs, utilizing a spin-Light Emitting Diode (spin-LED) as a method of detection. Semiconductor quantum dots (QDs) are attractive candidates for satisfying requirements 2 and 3 as their zero dimensionality significantly suppresses many spin-flip mechanisms leading to long spin coherence times, as well as enabling the localization and manipulation of a controlled number of electrons and holes. This thesis is composed of three projects that are all based on the optical properties of QD structures including: I) Intershell exchange between spin-polarized electrons occupying adjacent shells in InAs QDs; II) Spin-polarized multiexitons in InAs QDs in the presence of spin-orbit interactions; III) The optical Aharonov-Bohm effect in AlxGa1-xAs/AlyGa1-yAs quantum wells (QWs). In the following we introduce some of the basic optical properties of quantum dots, describe the main tool (spin-LED) employed in this thesis to inject and detect spins in these QDs, and conclude with the optical Aharonov-Bohm effect (OAB) in type-II QDs.

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

PubMed

Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

2018-04-01

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Electro-optic component mounting device

DOEpatents

Gruchalla, M.E.

1994-09-13

A technique is provided for integrally mounting a device such as an electro-optic device in a transmission line to avoid series resonant effects. A center conductor of the transmission line has an aperture formed therein for receiving the device. The aperture splits the center conductor into two parallel sections on opposite sides of the device. For a waveguide application, the center conductor is surrounded by a conductive ground surface which is spaced apart from the center conductor with a dielectric material. One set of electrodes formed on the surface of the electro-optic device is directly connected to the center conductor and an electrode formed on the surface of the electro-optic device is directly connected to the conductive ground surface. The electrodes formed on the surface of the electro-optic device are formed on curved sections of the surface of the device to mate with correspondingly shaped electrodes on the conductor and ground surface to provide a uniform electric field across the electro-optic device. The center conductor includes a passage formed therein for passage of optical signals to an electro-optic device. 10 figs.

Flexible graphene-PZT ferroelectric nonvolatile memory.

PubMed

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

NASA Astrophysics Data System (ADS)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

NASA Astrophysics Data System (ADS)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

CMOS compatible electrode materials selection in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

2016-07-01

Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

Analogue spin-orbit torque device for artificial-neural-network-based associative memory operation

NASA Astrophysics Data System (ADS)

Borders, William A.; Akima, Hisanao; Fukami, Shunsuke; Moriya, Satoshi; Kurihara, Shouta; Horio, Yoshihiko; Sato, Shigeo; Ohno, Hideo

2017-01-01

We demonstrate associative memory operations reminiscent of the brain using nonvolatile spintronics devices. Antiferromagnet-ferromagnet bilayer-based Hall devices, which show analogue-like spin-orbit torque switching under zero magnetic fields and behave as artificial synapses, are used. An artificial neural network is used to associate memorized patterns from their noisy versions. We develop a network consisting of a field-programmable gate array and 36 spin-orbit torque devices. An effect of learning on associative memory operations is successfully confirmed for several 3 × 3-block patterns. A discussion on the present approach for realizing spintronics-based artificial intelligence is given.

Multiscale modeling of nanostructured ZnO based devices for optoelectronic applications: Dynamically-coupled structural fields, charge, and thermal transport processes

NASA Astrophysics Data System (ADS)

Abdullah, Abdulmuin; Alqahtani, Saad; Nishat, Md Rezaul Karim; Ahmed, Shaikh; SIU Nanoelectronics Research Group Team

Recently, hybrid ZnO nanostructures (such as ZnO deposited on ZnO-alloys, Si, GaN, polymer, conducting oxides, and organic compounds) have attracted much attention for their possible applications in optoelectronic devices (such as solar cells, light emitting and laser diodes), as well as in spintronics (such as spin-based memory, and logic). However, efficiency and performance of these hybrid ZnO devices strongly depend on an intricate interplay of complex, nonlinear, highly stochastic and dynamically-coupled structural fields, charge, and thermal transport processes at different length and time scales, which have not yet been fully assessed experimentally. In this work, we study the effects of these coupled processes on the electronic and optical emission properties in nanostructured ZnO devices. The multiscale computational framework employs the atomistic valence force-field molecular mechanics, models for linear and non-linear polarization, the 8-band sp3s* tight-binding models, and coupling to a TCAD toolkit to determine the terminal properties of the device. A series of numerical experiments are performed (by varying different nanoscale parameters such as size, geometry, crystal cut, composition, and electrostatics) that mainly aim to improve the efficiency of these devices. Supported by the U.S. National Science Foundation Grant No. 1102192.

High-Density, High-Bandwidth, Multilevel Holographic Memory

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

2008-01-01

A proposed holographic memory system would be capable of storing data at unprecedentedly high density, and its data transfer performance in both reading and writing would be characterized by exceptionally high bandwidth. The capabilities of the proposed system would greatly exceed even those of a state-of-the art memory system, based on binary holograms (in which each pixel value represents 0 or 1), that can hold .1 terabyte of data and can support a reading or writing rate as high as 1 Gb/s. The storage capacity of the state-of-theart system cannot be increased without also increasing the volume and mass of the system. However, in principle, the storage capacity could be increased greatly, without significantly increasing the volume and mass, if multilevel holograms were used instead of binary holograms. For example, a 3-bit (8-level) hologram could store 8 terabytes, or an 8-bit (256-level) hologram could store 256 terabytes, in a system having little or no more size and mass than does the state-of-the-art 1-terabyte binary holographic memory. The proposed system would utilize multilevel holograms. The system would include lasers, imaging lenses and other beam-forming optics, a block photorefractive crystal wherein the holograms would be formed, and two multilevel spatial light modulators in the form of commercially available deformable-mirror-device spatial light modulators (DMDSLMs) made for use in high speed input conversion of data up to 12 bits. For readout, the system would also include two arrays of complementary metal oxide/semiconductor (CMOS) photodetectors matching the spatial light modulators. The system would further include a reference-beam sterring device (equivalent of a scanning mirror), containing no sliding parts, that could be either a liquid-crystal phased-array device or a microscopic mirror actuated by a high-speed microelectromechanical system. Time-multiplexing and the multilevel nature of the DMDSLM would be exploited to enable writing and reading of multilevel holograms. The DMDSLM would also enable transfer of data at a rate of 7.6 Gb/s or perhaps somewhat higher.

Tunable resonator-based devices for producing variable delays and narrow spectral linewidths

NASA Technical Reports Server (NTRS)

Savchenkov, Anatoliy (Inventor); Maleki, Lutfollah (Inventor); Matsko, Andrey B. (Inventor); Ilchenko, Vladimir (Inventor)

2006-01-01

Devices with two or more coupled resonators to produce narrow spectral responses due to interference of signals that transmit through the resonators and techniques for operating such devices to achieve certain operating characteristics are described. The devices may be optical devices where optical resonators such as whispering gallery mode resonators may be used. In one implementation, at least one of the coupled optical resonators is a tunable resonator and is tuned to change its resonance frequency to tune the spectral response of the device. The described devices and techniques may be applied in optical filters, optical delays, optical waveform generators, and other applications.

Radiation dosimetry using three-dimensional optical random access memories

NASA Technical Reports Server (NTRS)

Moscovitch, M.; Phillips, G. W.

2001-01-01

Three-dimensional optical random access memories (3D ORAMs) are a new generation of high-density data storage devices. Binary information is stored and retrieved via a light induced reversible transformation of an ensemble of bistable photochromic molecules embedded in a polymer matrix. This paper describes the application of 3D ORAM materials to radiation dosimetry. It is shown both theoretically and experimentally, that ionizing radiation in the form of heavy charged particles is capable of changing the information originally stored on the ORAM material. The magnitude and spatial distribution of these changes are used as a measure of the absorbed dose, particle type and energy. The effects of exposure on 3D ORAM materials have been investigated for a variety of particle types and energies, including protons, alpha particles and 12C ions. The exposed materials are observed to fluoresce when exposed to laser light. The intensity and the depth of the fluorescence is dependent on the type and energy of the particle to which the materials were exposed. It is shown that these effects can be modeled using Monte Carlo calculations. The model provides a better understanding of the properties of these materials. which should prove useful for developing systems for charged particle and neutron dosimetry/detector applications. c2001 Published by Elsevier Science B.V.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

Review of radiation effects on ReRAM devices and technology

NASA Astrophysics Data System (ADS)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

Subnanosecond control of excitons in coupled quantum well nanostructures: Photonic storage and Exciton Conveyer devices

NASA Astrophysics Data System (ADS)

Winbow, Alexander Graham

Indirect excitons in GaAs coupled quantum well nanostructures are a versatile system for fundamental study of cold neutral bosonic gases and demonstration of novel optoelectronic devices based on excitons --- a bound electron--hole pair --- rather than electrons. Indirect exciton lifetimes range from nanoseconds to microseconds and cool rapidly after photoexcitation to the lattice temperature. Lithographically-patterned electrodes enable design of potential energy landscapes, and both energy and lifetime can be controlled in situ, rapidly, on timescales much shorter than the exciton lifetime. Such intrinsically optoelectronic devices can operate at speeds relevant to optical networks, and later be fabricated in other semiconductors for higher-temperature operation. Two different kinds of devices are demonstrated: Photon storage --- an optical memory --- with 250 ps rise time of the readout optical signal and storage time reaching microseconds was implemented with indirect excitons in CQW. The storage and release of photons was controlled by the gate voltage pulse, and the transient processes in the CQW studied by measuring the kinetics of the exciton emission spectra. This control of excitons on timescales much shorter than the exciton lifetime demonstrates the feasibility of studying excitons in in situ controlled electrostatic traps. The Exciton Conveyer is a laterally moving electrostatic lattice potential for actively transporting excitons. Generated by laterally modulated electrodes, the potential velocity and depth are controlled in situ by frequency and voltage. We observed exciton transport characterized by average exciton cloud spatial extension over several tens of microns, and observed dynamical localization--delocalization transitions for the excitons in the conveyer: In the localization regime of deeper potentials and moderate exciton density, excitons are moved by the conveyer; in the delocalized regime of shallower lattice potential or high exciton density, excitons do not follow the conveyer motion. We explore conveyer velocities both slower and faster than phonon velocities. Realizing subnanosecond manipulations of exciton energy and lifetime required versatile control of pulsed and multiple AC RF electrical signals in optical, liquid helium cryogenic systems. Considerable detail is presented of design, construction, and test of flexible experimental apparatus.

The strain and thermal induced tunable charging phenomenon in low power flexible memory arrays with a gold nanoparticle monolayer

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Xu, Zong-Xiang; Roy, V. A. L.

2013-02-01

The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics.The strain and temperature dependent memory effect of organic memory transistors on plastic substrates has been investigated under ambient conditions. The gold (Au) nanoparticle monolayer was prepared and embedded in an atomic layer deposited aluminum oxide (Al2O3) as the charge trapping layer. The devices exhibited low operation voltage, reliable memory characteristics and long data retention time. Experimental analysis of the programming and erasing behavior at various bending states showed the relationship between strain and charging capacity. Thermal-induced effects on these memory devices have also been analyzed. The mobility shows ~200% rise and the memory window increases from 1.48 V to 1.8 V when the temperature rises from 20 °C to 80 °C due to thermally activated transport. The retention capability of the devices decreases with the increased working temperature. Our findings provide a better understanding of flexible organic memory transistors under various operating temperatures and validate their applications in various areas such as temperature sensors, temperature memory or advanced electronic circuits. Furthermore, the low temperature processing procedures of the key elements (Au nanoparticle monolayer and Al2O3 dielectric layer) could be potentially integrated with large area flexible electronics. Electronic supplementary information (ESI) available: UV-vis spectrum of Au nanoparticle aqueous solution, transfer characteristics of the transistors without inserting an Au nanoparticle monolayer, AFM image of the pentacene layer, transfer characteristics at different program voltages and memory windows with respect to the P/E voltage. See DOI: 10.1039/c2nr32579a

Optical-to-optical interface device

NASA Technical Reports Server (NTRS)

Jacobson, A. D.; Bleha, W. P.; Miller, L.; Grinberg, J.; Fraas, L.; Margerum, D.

1975-01-01

An investigation was conducted to develop an optical-to-optical interface device capable of performing real-time incoherent-to-incoherent optical image conversion. The photoactivated liquid crystal light valve developed earlier represented a prototype liquid crystal light valve device capable of performing these functions. A device was developed which had high performance and extended lifetime.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

4D Printing of Shape Memory-Based Personalized Endoluminal Medical Devices.

PubMed

Zarek, Matt; Mansour, Nicola; Shapira, Shir; Cohn, Daniel

2017-01-01

The convergence of additive manufacturing and shape-morphing materials is promising for the advancement of personalized medical devices. The capability to transform 3D objects from one shape to another, right off the print bed, is known as 4D printing. Shape memory thermosets can be tailored to have a range of thermomechanical properties favorable to medical devices, but processing them is a challenge because they are insoluble and do not flow at any temperature. This study presents here a strategy to capitalize on a series of medical imaging modalities to construct a printable shape memory endoluminal device, exemplified by a tracheal stent. A methacrylated polycaprolactone precursor with a molecular weight of 10 000 g mol -1 is printed with a UV-LED stereolithography printer based on anatomical data. This approach converges with the zeitgeist of personalized medicine and it is anticipated that it will broadly expand the application of shape memory-exhibiting biomedical devices to myriad clinical indications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investing the effectiveness of retention performance in a non-volatile floating gate memory device with a core-shell structure of CdSe nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Dong-Hoon; Kim, Jung-Min; Lim, Ki-Tae; Cho, Hyeong Jun; Bang, Jin Ho; Kim, Yong-Sang

2016-03-01

In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices. [Figure not available: see fulltext.

A motionless actuation system for magnetic shape memory devices

NASA Astrophysics Data System (ADS)

Armstrong, Andrew; Finn, Kevin; Hobza, Anthony; Lindquist, Paul; Rafla, Nader; Müllner, Peter

2017-10-01

Ni-Mn-Ga is a Magnetic Shape Memory (MSM) alloy that changes shape in response to a variable magnetic field. We can intentionally manipulate the shape of the material to function as an actuator, and the material can thus replace complicated small electromechanical systems. In previous work, a very simple and precise solid-state micropump was developed, but a mechanical rotation was required to translate the position of the magnetic field. This mechanical rotation defeats the purpose of the motionless solid-state device. Here we present a solid-state electromagnetic driver to linearly progress the position of the applied magnetic field and the associated shrinkage. The generated magnetic field was focused at either of two pole pieces, providing a mechanism for moving the localized shrinkage in the MSM element. We confirmed that our driver has sufficient strength to actuate the MSM element using optical microscopy. We validated the whole design by comparing results obtained with finite element analysis with the experimentally measured flux density. This drive system serves as a possible replacement to the mechanical rotation of the magnetic field by using a multi-pole electromagnet that sweeps the magnetic field across the MSM micropump element, solid-state switching the current to each pole piece in the multi-pole electromagnet.

Fully transparent, non-volatile bipolar resistive memory based on flexible copolyimide films

NASA Astrophysics Data System (ADS)

Yu, Hwan-Chul; Kim, Moon Young; Hong, Minki; Nam, Kiyong; Choi, Ju-Young; Lee, Kwang-Hun; Baeck, Kyoung Koo; Kim, Kyoung-Kook; Cho, Soohaeng; Chung, Chan-Moon

2017-01-01

Partially aliphatic homopolyimides and copolyimides were prepared from rel-(1'R,3S,5'S)-spiro[furan-3(2H),6'-[3]oxabicyclo[3.2.1]octane]-2,2',4',5(4H)-tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4'-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We utilized these polyimide films as the resistive switching layer in transparent memory devices. While WORM memory behavior was obtained with the PI-A100-O0-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 1 : 0), the PI-A70-O30-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 0.7 : 0.3) exhibited bipolar resistive switching behavior with stable retention for 104 s. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices prepared from PI-A100-O0 and PI-A70-O30 showed over 90% transmittance in the visible wavelength range from 400 to 800 nm. The behavior of the memory devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation. [Figure not available: see fulltext.

Capacitance-voltage measurement in memory devices using ferroelectric polymer

NASA Astrophysics Data System (ADS)

Nguyen, Chien A.; Lee, Pooi See

2006-01-01

Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

Realization and testing of a deployable space telescope based on tape springs

NASA Astrophysics Data System (ADS)

Lei, Wang; Li, Chuang; Zhong, Peifeng; Chong, Yaqin; Jing, Nan

2017-08-01

For its compact size and light weight, space telescope with deployable support structure for its secondary mirror is very suitable as an optical payload for a nanosatellite or a cubesat. Firstly the realization of a prototype deployable space telescope based on tape springs is introduced in this paper. The deployable telescope is composed of primary mirror assembly, secondary mirror assembly, 6 foldable tape springs to support the secondary mirror assembly, deployable baffle, aft optic components, and a set of lock-released devices based on shape memory alloy, etc. Then the deployment errors of the secondary mirror are measured with three-coordinate measuring machine to examine the alignment accuracy between the primary mirror and the deployed secondary mirror. Finally modal identification is completed for the telescope in deployment state to investigate its dynamic behavior with impact hammer testing. The results of the experimental modal identification agree with those from finite element analysis well.

Quantum memory with optically trapped atoms.

PubMed

Chuu, Chih-Sung; Strassel, Thorsten; Zhao, Bo; Koch, Markus; Chen, Yu-Ao; Chen, Shuai; Yuan, Zhen-Sheng; Schmiedmayer, Jörg; Pan, Jian-Wei

2008-09-19

We report the experimental demonstration of quantum memory for collective atomic states in a far-detuned optical dipole trap. Generation of the collective atomic state is heralded by the detection of a Raman scattered photon and accompanied by storage in the ensemble of atoms. The optical dipole trap provides confinement for the atoms during the quantum storage while retaining the atomic coherence. We probe the quantum storage by cross correlation of the photon pair arising from the Raman scattering and the retrieval of the atomic state stored in the memory. Nonclassical correlations are observed for storage times up to 60 mus.

Electronics for CMS Endcap Muon Level-1 Trigger System Phase-1 and HL LHC upgrades

NASA Astrophysics Data System (ADS)

Madorsky, A.

2017-07-01

To accommodate high-luminosity LHC operation at a 13 TeV collision energy, the CMS Endcap Muon Level-1 Trigger system had to be significantly modified. To provide robust track reconstruction, the trigger system must now import all available trigger primitives generated by the Cathode Strip Chambers and by certain other subsystems, such as Resistive Plate Chambers (RPC). In addition to massive input bandwidth, this also required significant increase in logic and memory resources. To satisfy these requirements, a new Sector Processor unit has been designed. It consists of three modules. The Core Logic module houses the large FPGA that contains the track-finding logic and multi-gigabit serial links for data exchange. The Optical module contains optical receivers and transmitters; it communicates with the Core Logic module via a custom backplane section. The Pt Lookup table (PTLUT) module contains 1 GB of low-latency memory that is used to assign the final Pt to reconstructed muon tracks. The μ TCA architecture (adopted by CMS) was used for this design. The talk presents the details of the hardware and firmware design of the production system based on Xilinx Virtex-7 FPGA family. The next round of LHC and CMS upgrades starts in 2019, followed by a major High-Luminosity (HL) LHC upgrade starting in 2024. In the course of these upgrades, new Gas Electron Multiplier (GEM) detectors and more RPC chambers will be added to the Endcap Muon system. In order to keep up with all these changes, a new Advanced Processor unit is being designed. This device will be based on Xilinx UltraScale+ FPGAs. It will be able to accommodate up to 100 serial links with bit rates of up to 25 Gb/s, and provide up to 2.5 times more logic resources than the device used currently. The amount of PTLUT memory will be significantly increased to provide more flexibility for the Pt assignment algorithm. The talk presents preliminary details of the hardware design program.

Investigation of resistive switching behaviours in WO3-based RRAM devices

NASA Astrophysics Data System (ADS)

Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming

2011-01-01

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

Electro-optic component mounting device

DOEpatents

Gruchalla, Michael E.

1994-01-01

A technique is provided for integrally mounting a device such as an electro-optic device (50) in a transmission line to avoid series resonant effects. A center conductor (52) of the transmission line has an aperture (58) formed therein for receiving the device (50). The aperture (58) splits the center conductor into two parallel sections on opposite sides of the device. For a waveguide application, the center conductor is surrounded by a conductive ground surface (54), which is spaced apart from the center conductor with a dielectric material (56). One set of electrodes formed on the surface of the electro-optic device (50) is directly connected to the center conductor 52 and an electrode formed on the surface of the electro-optic device is directly connected to the conductive ground surface (54). The electrodes formed on the surface of the electro-optic device are formed on curved sections of the surface of the device to mate with correspondingly shaped electrodes on the conductor and ground surface to provide a uniform electric field across the electro-optic device. The center conductor includes a passage ( 60) formed therein for passage of optical signals to an electro-optic device.

Incorporating an optical waveguide into a neural interface

DOEpatents

Tolosa, Vanessa; Delima, Terri L.; Felix, Sarah H.; Pannu, Satinderpall S.; Shah, Kedar G.; Sheth, Heeral; Tooker, Angela C.

2016-11-08

An optical waveguide integrated into a multielectrode array (MEA) neural interface includes a device body, at least one electrode in the device body, at least one electrically conducting lead coupled to the at least one electrode, at least one optical channel in the device body, and waveguide material in the at least one optical channel. The fabrication of a neural interface device includes the steps of providing a device body, providing at least one electrode in the device body, providing at least one electrically conducting lead coupled to the at least one electrode, providing at least one optical channel in the device body, and providing a waveguide material in the at least one optical channel.

A Normal Incidence X-ray Telescope (NIXT) sounding rocket payload

NASA Technical Reports Server (NTRS)

Golub, Leon

1989-01-01

Work on the High Resolution X-ray (HRX) Detector Program is described. In the laboratory and flight programs, multiple copies of a general purpose set of electronics which control the camera, signal processing and data acquisition, were constructed. A typical system consists of a phosphor convertor, image intensifier, a fiber optics coupler, a charge coupled device (CCD) readout, and a set of camera, signal processing and memory electronics. An initial rocket detector prototype camera was tested in flight and performed perfectly. An advanced prototype detector system was incorporated on another rocket flight, in which a high resolution heterojunction vidicon tube was used as the readout device for the H(alpha) telescope. The camera electronics for this tube were built in-house and included in the flight electronics. Performance of this detector system was 100 percent satisfactory. The laboratory X-ray system for operation on the ground is also described.

Overview of emerging nonvolatile memory technologies

PubMed Central

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices. PMID:25278820

Overview of emerging nonvolatile memory technologies.

PubMed

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Attenuator And Conditioner

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Carson, Richard F.; Bryan, Robert P.; Duckett, III, Edwin B.; Kemme, Shanalyn Adair; McCormick, Frederick B.; Peterson, David W.

2006-04-04

An apparatus and method of attenuating and/or conditioning optical energy for an optical transmitter, receiver or transceiver module is disclosed. An apparatus for attenuating the optical output of an optoelectronic connector including: a mounting surface; an array of optoelectronic devices having at least a first end; an array of optical elements having at least a first end; the first end of the array of optical elements optically aligned with the first end of the array of optoelectronic devices; an optical path extending from the first end of the array of optoelectronic devices and ending at a second end of the array of optical elements; and an attenuator in the optical path for attenuating the optical energy emitted from the array of optoelectronic devices. Alternatively, a conditioner may be adapted in the optical path for conditioning the optical energy emitted from the array of optoelectronic devices.

Reconfigurable optical-to-optical frequency conversion method and apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zortman, William A.; Lentine, Anthony L.

A photonic device is provided for impressing a modulation pattern on an optical carrier. The device includes a unit in which a photodetector and an optical microresonator are monolithically integrated. The device further includes an optical waveguide evanescently coupled to the optical microresonator and having at least an upstream portion configured to carry at least one optical carrier toward the microresonator. The optical microresonator is tunable so as to resonate with the optical carrier frequency. The optical microresonator and the photodetector are mutually coupled such that in operation, charge carriers photogenerated in the photodetector are injected into the microresonator, wheremore » the photocurrent changes the resonant conditions. In some embodiments the device is operable as an optical-to-optical frequency converter. In other embodiments the device is operable as an oscillator.« less

Memristive effects in oxygenated amorphous carbon nanodevices

NASA Astrophysics Data System (ADS)

Bachmann, T. A.; Koelmans, W. W.; Jonnalagadda, V. P.; Le Gallo, M.; Santini, C. A.; Sebastian, A.; Eleftheriou, E.; Craciun, M. F.; Wright, C. D.

2018-01-01

Computing with resistive-switching (memristive) memory devices has shown much recent progress and offers an attractive route to circumvent the von-Neumann bottleneck, i.e. the separation of processing and memory, which limits the performance of conventional computer architectures. Due to their good scalability and nanosecond switching speeds, carbon-based resistive-switching memory devices could play an important role in this respect. However, devices based on elemental carbon, such as tetrahedral amorphous carbon or ta-C, typically suffer from a low cycling endurance. A material that has proven to be capable of combining the advantages of elemental carbon-based memories with simple fabrication methods and good endurance performance for binary memory applications is oxygenated amorphous carbon, or a-CO x . Here, we examine the memristive capabilities of nanoscale a-CO x devices, in particular their ability to provide the multilevel and accumulation properties that underpin computing type applications. We show the successful operation of nanoscale a-CO x memory cells for both the storage of multilevel states (here 3-level) and for the provision of an arithmetic accumulator. We implement a base-16, or hexadecimal, accumulator and show how such a device can carry out hexadecimal arithmetic and simultaneously store the computed result in the self-same a-CO x cell, all using fast (sub-10 ns) and low-energy (sub-pJ) input pulses.

Nanomaterials for Electronics and Optoelectronics

NASA Technical Reports Server (NTRS)

Koehne, Jessica E.; Meyyappan, M.

2011-01-01

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing.

PubMed

Kuzum, Duygu; Jeyasingh, Rakesh G D; Lee, Byoungil; Wong, H-S Philip

2012-05-09

Brain-inspired computing is an emerging field, which aims to extend the capabilities of information technology beyond digital logic. A compact nanoscale device, emulating biological synapses, is needed as the building block for brain-like computational systems. Here, we report a new nanoscale electronic synapse based on technologically mature phase change materials employed in optical data storage and nonvolatile memory applications. We utilize continuous resistance transitions in phase change materials to mimic the analog nature of biological synapses, enabling the implementation of a synaptic learning rule. We demonstrate different forms of spike-timing-dependent plasticity using the same nanoscale synapse with picojoule level energy consumption.

Use of biphase-coded pulses for wideband data storage in time-domain optical memories.

PubMed

Shen, X A; Kachru, R

1993-06-10

We demonstrate that temporally long laser pulses with appropriate phase modulation can replace either temporally brief or frequency-chirped pulses in a time-domain optical memory to store and retrieve information. A 1.65-µs-long write pulse was biphase modulated according to the 13-bit Barker code for storing multiple bits of optical data into a Pr(3+):YAlO(3) crystal, and the stored information was later recalled faithfully by using a read pulse that was identical to the write pulse. Our results further show that the stored data cannot be retrieved faithfully if mismatched write and read pulses are used. This finding opens up the possibility of designing encrypted optical memories for secure data storage.

Chip-to-chip optical link by using optical wiring method

NASA Astrophysics Data System (ADS)

Cho, In-Kui; Ahn, Seoung Ho; Jeong, Myung-Yung; Rho, Byung Sup; Park, Hyo Hoon

2008-01-01

A practical optical link system was prepared with a transmitter (Tx) and receiver (Rx). The optical TRx module consisted of a metal optical bench, a module printed circuit board (PCB), a driver/receiver IC, a VCSEL/PD array, and an optical link block composed of plastic optical fiber (POF). For the optical interconnection between the light-sources and detectors, an optical wiring method has been proposed to enable easy assembly. This paper provides a method for optical interconnection between an optical Tx and an optical Rx, comprising the following steps: (a) forming a light source device, an optical detection device, and an optical transmission unit on a substrate (metal optical bench (MOB)); (b) preparing a flexible optical transmission-connection medium (optical wiring link) to optically connect the light source device formed on the substrate with the optical detection device; and (c) directly connecting one end of the surface-finished optical transmission connection medium with the light source device and the other end with the optical detection device. A chip-to-chip optical link system constructed with TRx modules was fabricated and the optical characteristics were measured. The results clearly demonstrate that the use of an optical wiring method can provide robust and cost-effective assembly for vertical-cavity surface-emitting lasers (VCSELs) and photodiodes (PDs). We successfully achieved a 5 Gb/s data transmission rate with this optical link.

Regenerative memory in time-delayed neuromorphic photonic resonators

NASA Astrophysics Data System (ADS)

Romeira, B.; Avó, R.; Figueiredo, José M. L.; Barland, S.; Javaloyes, J.

2016-01-01

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Optoelectronic and all-optical multiple memory states in vanadium dioxide

NASA Astrophysics Data System (ADS)

Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E.

2010-12-01

Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were maintained—by heat sinking—at a selected temperature within the heating branch of the hysteresis loops for resistance and near-infrared transmittance, while brief thermal excursions of the VO2 film were caused by either voltage pulses applied to the film or laser light pulses irradiating the film. These pulses had durations from milliseconds to a few seconds and the resulting drops in resistance or transmittance were easily and repeatably measurable without appreciably affecting their new values. A sequence of equal-duration pulses (for either equal-voltage or equal-irradiation pulses) caused the resistance and infrared transmittance to continue to drop, each time by a smaller amount, and larger energy pulses were required in order to cause drops comparable with the initial one. The ability of the film to change the values of the measurands in this manner with additional pulses was maintained up to a limit defined by the outer hysteresis curve for the measurand in question. The results presented show that a plurality of memory "states" in VO2 can be established or "written" either by voltage pulses or by light pulses applied to the material, and queried or "read" by resistance or transmittance readings, or both. These states were found to remain stable for at least several hours, as long as temperature was kept constant, and are expected to persist indefinitely under this condition. In the all-optical case, if the same light beam is used for writing and reading the memory state, the device is an optical analog of a memristor.

15 CFR 740.19 - Consumer Communications Devices (CCD).

Code of Federal Regulations, 2010 CFR

2010-01-01

...; (11) Memory devices classified under ECCN 5A992 or designated EAR99; (12) “Information security... 5D992 or designated EAR99; (13) Digital cameras and memory cards classified under ECCN 5A992 or...

Shape memory alloy actuator

DOEpatents

Varma, Venugopal K.

2001-01-01

An actuator for cycling between first and second positions includes a first shaped memory alloy (SMA) leg, a second SMA leg. At least one heating/cooling device is thermally connected to at least one of the legs, each heating/cooling device capable of simultaneously heating one leg while cooling the other leg. The heating/cooling devices can include thermoelectric and/or thermoionic elements.

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain.

PubMed

Hou, Xiang; Cheng, Xue-Feng; Xiao, Xin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

2017-09-05

Organic multilevel random resistive access memory (RRAM) devices with an electrode/organic layer/electrode sandwich-like structure suffer from poor reproducibility, such as low effective ternary device yields and a wide threshold voltage distribution, and improvements through organic material renovation are rather limited. In contrast, engineering of the electrode surfaces rather than molecule design has been demonstrated to boost the performance of organic electronics effectively. Herein, we introduce surface engineering into organic multilevel RRAMs to enhance their ternary memory performance. A new asymmetric conjugated molecule composed of phenothiazine and malononitrile with a side chain (PTZ-PTZO-CN) was fabricated in an indium tin oxide (ITO)/PTZ-PTZO-CN/Al sandwich-like memory device. Modification of the ITO substrate with a phosphonic acid (PA) prior to device fabrication increased the ternary device yield (the ratio of effective ternary device) and narrowed the threshold voltage distribution. The crystallinity analysis revealed that PTZ-PTZO-CN grown on untreated ITO crystallized into two phases. After the surface engineering of ITO, this crystalline ambiguity was eliminated and a sole crystal phase was obtained that was the same as in the powder state. The unified crystal structure and improved grain mosaicity resulted in a lower threshold voltage and, therefore, a higher ternary device yield. Our result demonstrated that PA modification also improved the memory performance of an asymmetric conjugated molecule with a side chain. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Materials requirements for optical processing and computing devices

NASA Technical Reports Server (NTRS)

Tanguay, A. R., Jr.

1985-01-01

Devices for optical processing and computing systems are discussed, with emphasis on the materials requirements imposed by functional constraints. Generalized optical processing and computing systems are described in order to identify principal categories of requisite components for complete system implementation. Three principal device categories are selected for analysis in some detail: spatial light modulators, volume holographic optical elements, and bistable optical devices. The implications for optical processing and computing systems of the materials requirements identified for these device categories are described, and directions for future research are proposed.

Local nondestructive data reading in three-dimensional memory systems based on the optical Kerr effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheltikov, Aleksei M; Koroteev, Nikolai I; Naumov, A N

1998-11-30

An investigation was made of the characteristics of the optical Kerr effect in a spiropyran solution. It was found that this effect makes it possible to distinguish the coloured and uncoloured forms of spiropyran and that it represents a promising method for nondestructive data reading in three-dimensional optical memory systems based on photochromic materials. (letters to the editor)

Coherent spin control of a nanocavity-enhanced qubit in diamond

DOE PAGES

Li, Luozhou; Lu, Ming; Schroder, Tim; ...

2015-01-28

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy nanocavity systems in strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interfacemore » is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.« less

Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.

PubMed

Hou, Xiang; Cheng, Xue-Feng; Zhou, Jin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

2017-11-16

Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane self-assembled monolayers (SAMs) on ITO substrates, and resistive random access memory devices are fabricated on these surfaces. Compared to the unmodified ITO substrates, organic molecules (i.e., 2-((4-butylphenyl)amino)-4-((4-butylphenyl)iminio)-3-oxocyclobut-1-en-1-olate, SA-Bu) grown on these SAM-modified ITO substrates have rougher surface morphologies but a smaller mosaicity. The organic layer on the SAM-modified ITO further aged to eliminate the crystalline phase diversity. In consequence, the ternary memory yields are effectively improved to approximately 40-47 %. Our results suggest that the insertion of alkyltrichlorosilane self-assembled monolayers could be an efficient method to improve the performance of organic memory devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

PubMed

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

PubMed Central

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

2017-01-01

Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

Feasibility study of molecular memory device based on DNA using methylation to store information

NASA Astrophysics Data System (ADS)

Jiang, Liming; Qiu, Wanzhi; Al-Dirini, Feras; Hossain, Faruque M.; Evans, Robin; Skafidas, Efstratios

2016-07-01

DNA, because of its robustness and dense information storage capability, has been proposed as a potential candidate for next-generation storage media. However, encoding information into the DNA sequence requires molecular synthesis technology, which to date is costly and prone to synthesis errors. Reading the DNA strand information is also complex. Ideally, DNA storage will provide methods for modifying stored information. Here, we conduct a feasibility study investigating the use of the DNA 5-methylcytosine (5mC) methylation state as a molecular memory to store information. We propose a new 1-bit memory device and study, based on the density functional theory and non-equilibrium Green's function method, the feasibility of electrically reading the information. Our results show that changes to methylation states lead to changes in the peak of negative differential resistance which can be used to interrogate memory state. Our work demonstrates a new memory concept based on methylation state which can be beneficial in the design of next generation DNA based molecular electronic memory devices.

A graphene integrated highly transparent resistive switching memory device

NASA Astrophysics Data System (ADS)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (<±1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of ˜5 × 103. We also fabricated a ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures.

PubMed

Abhijith, T; Kumar, T V Arun; Reddy, V S

2017-03-03

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO 3 ) between two tris-(8-hydroxyquinoline)aluminum (Alq 3 ) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 3 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO 3 layer thickness and its location in the Alq 3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO 3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

NASA Astrophysics Data System (ADS)

Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

2017-03-01

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Selective Processing Techniques for Electronics and Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits

DTIC Science & Technology

1993-02-10

new technology is to have sufficient control of processing to *- describable by an appropriate elecromagnetic model . build useful devices. For example...3. W aveguide Modulators .................................. 7 B. Integrated Optical Device and Circuit Modeling ... ................... .. 10 C...following categories: A. Integrated Optical Devices and Technology B. Integrated Optical Device and Circuit Modeling C. Cryogenic Etching for Low

Advanced optical network architecture for integrated digital avionics

NASA Astrophysics Data System (ADS)

Morgan, D. Reed

1996-12-01

For the first time in the history of avionics, the network designer now has a choice in selecting the media that interconnects the sources and sinks of digital data on aircraft. Electrical designs are already giving way to photonics in application areas where the data rate times distance product is large or where special design requirements such as low weight or EMI considerations are critical. Future digital avionic architectures will increasingly favor the use of photonic interconnects as network data rates of one gigabit/second and higher are needed to support real-time operation of high-speed integrated digital processing. As the cost of optical network building blocks is reduced and as temperature-rugged laser sources are matured, metal interconnects will be forced to retreat to applications spanning shorter and shorter distances. Although the trend is already underway, the widespread use of digital optics will first occur at the system level, where gigabit/second, real-time interconnects between sensors, processors, mass memories and displays separated by a least of few meters will be required. The application of photonic interconnects for inter-printed wiring board signalling across the backplane will eventually find application for gigabit/second applications since signal degradation over copper traces occurs before one gigabit/second and 0.5 meters are reached. For the foreseeable future however, metal interconnects will continue to be used to interconnect devices on printed wiring boards since 5 gigabit/second signals can be sent over metal up to around 15 centimeters. Current-day applications of optical interconnects at the system level are described and a projection of how advanced optical interconnect technology will be driven by the use of high speed integrated digital processing on future aircraft is presented. The recommended advanced network for application in the 2010 time frame is a fiber-based system with a signalling speed of around 2-3 gigabits per second. This switch-based unified network will interconnect sensors, displays, mass memory and controls and displays to computer modules within the processing complex. The characteristics of required building blocks needed for the future are described. These building blocks include the fiber, an optical switch, a laser-based transceiver, blind-mate connectors and an optical backplane.

Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

NASA Astrophysics Data System (ADS)

Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

2018-05-01

This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

Micro-fabrication method of graphite mesa microdevices based on optical lithography technology

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Wen, Donghui; Zhu, Huamin; Zhang, Xiaorui; Yang, Xing; Shi, Yunsheng; Zheng, Tianxiang

2017-12-01

Graphite mesa microdevices have incommensurate contact nanometer interfaces, superlubricity, high-speed self-retraction, and other characteristics, which have potential applications in high-performance oscillators and micro-scale switches, memory devices, and gyroscopes. However, the current method of fabricating graphite mesa microdevices is mainly based on high-cost, low efficiency electron beam lithography technology. In this paper, the processing technologies of graphite mesa microdevices with various shapes and sizes were investigated by a low-cost micro-fabrication method, which was mainly based on optical lithography technology. The characterization results showed that the optical lithography technology could realize a large-area of patterning on the graphite surface, and the graphite mesa microdevices, which have a regular shape, neat arrangement, and high verticality could be fabricated in large batches through optical lithography technology. The experiments and analyses showed that the graphite mesa microdevices fabricated through optical lithography technology basically have the same self-retracting characteristics as those fabricated through electron beam lithography technology, and the maximum size of the graphite mesa microdevices with self-retracting phenomenon can reach 10 µm  ×  10 µm. Therefore, the proposed method of this paper can realize the high-efficiency and low-cost processing of graphite mesa microdevices, which is significant for batch fabrication and application of graphite mesa microdevices.

Development of a scalable generic platform for adaptive optics real time control

NASA Astrophysics Data System (ADS)

Surendran, Avinash; Burse, Mahesh P.; Ramaprakash, A. N.; Parihar, Padmakar

2015-06-01

The main objective of the present project is to explore the viability of an adaptive optics control system based exclusively on Field Programmable Gate Arrays (FPGAs), making strong use of their parallel processing capability. In an Adaptive Optics (AO) system, the generation of the Deformable Mirror (DM) control voltages from the Wavefront Sensor (WFS) measurements is usually through the multiplication of the wavefront slopes with a predetermined reconstructor matrix. The ability to access several hundred hard multipliers and memories concurrently in an FPGA allows performance far beyond that of a modern CPU or GPU for tasks with a well-defined structure such as Adaptive Optics control. The target of the current project is to generate a signal for a real time wavefront correction, from the signals coming from a Wavefront Sensor, wherein the system would be flexible to accommodate all the current Wavefront Sensing techniques and also the different methods which are used for wavefront compensation. The system should also accommodate for different data transmission protocols (like Ethernet, USB, IEEE 1394 etc.) for transmitting data to and from the FPGA device, thus providing a more flexible platform for Adaptive Optics control. Preliminary simulation results for the formulation of the platform, and a design of a fully scalable slope computer is presented.