Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

NASA Technical Reports Server (NTRS)

Efron, Uzi (Editor)

1990-01-01

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

On-chip photonic memory elements employing phase-change materials.

PubMed

Rios, Carlos; Hosseini, Peiman; Wright, C David; Bhaskaran, Harish; Pernice, Wolfram H P

2014-03-05

Phase-change materials integrated into nanophotonic circuits provide a flexible way to realize tunable optical components. Relying on the enormous refractive-index contrast between the amorphous and crystalline states, such materials are promising candidates for on-chip photonic memories. Nonvolatile memory operation employing arrays of microring resonators is demonstrated as a route toward all-photonic chipscale information processing. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Local nondestructive data reading in three-dimensional memory systems based on the optical Kerr effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheltikov, Aleksei M; Koroteev, Nikolai I; Naumov, A N

1998-11-30

An investigation was made of the characteristics of the optical Kerr effect in a spiropyran solution. It was found that this effect makes it possible to distinguish the coloured and uncoloured forms of spiropyran and that it represents a promising method for nondestructive data reading in three-dimensional optical memory systems based on photochromic materials. (letters to the editor)

Real-Time Fourier Transformed Holographic Associative Memory With Photorefractive Material

NASA Astrophysics Data System (ADS)

Changsuk, Oh; Hankyu, Park

1989-02-01

We describe a volume holographic associative memory using photorefractive material and conventional planar mirror. Multiple hologram is generated with two angular multiplexed writing beams and Fourier transformed object beam in BaTiO3 crystal at 0.6328 μm. Complete image can be recalled successfully by partial input of original stored image. It is proved that our system is useful for optical implementation of real-time associative memory and location addressable memory.

Ultranarrow Optical Inhomogeneous Linewidth in a Stoichiometric Rare-Earth Crystal.

PubMed

Ahlefeldt, R L; Hush, M R; Sellars, M J

2016-12-16

We obtain a low optical inhomogeneous linewidth of 25 MHz in the stoichiometric rare-earth crystal EuCl_{3}·6H_{2}O by isotopically purifying the crystal in ^{35}Cl. With this linewidth, an important limit for stoichiometric rare-earth crystals is surpassed: the hyperfine structure of ^{153}Eu is spectrally resolved, allowing the whole population of ^{153}Eu^{3+} ions to be prepared in the same hyperfine state using hole-burning techniques. This material also has a very high optical density, and can have long coherence times when deuterated. This combination of properties offers new prospects for quantum information applications. We consider two of these: quantum memories and quantum many-body studies. We detail the improvements in the performance of current memory protocols possible in these high optical depth crystals, and describe how certain memory protocols, such as off-resonant Raman memories, can be implemented for the first time in a solid-state system. We explain how the strong excitation-induced interactions observed in this material resemble those seen in Rydberg systems, and describe how these interactions can lead to quantum many-body states that could be observed using standard optical spectroscopy techniques.

Effect of cadmium telluride quantum dots on the dielectric and electro-optical properties of ferroelectric liquid crystals.

PubMed

Kumar, A; Biradar, A M

2011-04-01

We present here the dielectric and electro-optical studies of cadmium telluride quantum dots (CdTe QDs) doped ferroelectric liquid crystals (FLCs). It has been observed that the doping of CdTe QDs not only induced a pronounced memory effect but also affected the physical parameters of FLC material (LAHS19). The modifications in the physical parameters and memory effect of LAHS19 are found to depend on the concentration ratio of CdTe QDs. The lower concentration of CdTe QDs (1-3 wt%) enhanced the values of spontaneous polarization and rotational viscosity of LAHS19 material but did not favor the memory effect, whereas a higher concentration of CdTe QDs (>5 wt%) degraded the alignment of LAHS19 material. The doping of ∼5 wt% of CdTe QDs is found to be the most suitable for achieving good memory effect without significantly affecting the material parameters. ©2011 American Physical Society

Access to long-term optical memories using photon echoes retrieved from semiconductor spins

NASA Astrophysics Data System (ADS)

Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

2014-11-01

The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

A highly efficient silole-containing dithienylethene with excellent thermal stability and fatigue resistance: a promising candidate for optical memory storage materials.

PubMed

Chan, Jacky Chi-Hung; Lam, Wai Han; Yam, Vivian Wing-Wah

2014-12-10

Diarylethene compounds are potential candidates for applications in optical memory storage systems and photoswitchable molecular devices; however, they usually show low photocycloreversion quantum yields, which result in ineffective erasure processes. Here, we present the first highly efficient photochromic silole-containing dithienylethene with excellent thermal stability and fatigue resistance. The photochemical quantum yields for photocyclization and photocycloreversion of the compound are found to be high and comparable to each other; the latter of which is rarely found in diarylethene compounds. These would give rise to highly efficient photoswitchable material with effective writing and erasure processes. Incorporation of the silole moiety as a photochromic dithienylethene backbone also was demonstrated to enhance the thermal stability of the closed form, in which the thermal backward reaction to the open form was found to be negligible even at 100 °C, which leads to a promising candidate for use as photoswitchable materials and optical memory storage.

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

NASA Astrophysics Data System (ADS)

Noé, Pierre; Vallée, Christophe; Hippert, Françoise; Fillot, Frédéric; Raty, Jean-Yves

2018-01-01

Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, in non-volatile resistive memories. The latter, known as PCM memories or phase-change random access memories (PCRAMs), are the most promising candidates among emerging non-volatile memory (NVM) technologies to replace the current FLASH memories at CMOS technology nodes under 28 nm. Chalcogenide PCMs exhibit fast and reversible phase transformations between crystalline and amorphous states with very different transport and optical properties leading to a unique set of features for PCRAMs, such as fast programming, good cyclability, high scalability, multi-level storage capability, and good data retention. Nevertheless, PCM memory technology has to overcome several challenges to definitively invade the NVM market. In this review paper, we examine the main technological challenges that PCM memory technology must face and we illustrate how new memory architecture, innovative deposition methods, and PCM composition optimization can contribute to further improvements of this technology. In particular, we examine how to lower the programming currents and increase data retention. Scaling down PCM memories for large-scale integration means the incorporation of the PCM into more and more confined structures and raises materials science issues in order to understand interface and size effects on crystallization. Other materials science issues are related to the stability and ageing of the amorphous state of PCMs. The stability of the amorphous phase, which determines data retention in memory devices, can be increased by doping the PCM. Ageing of the amorphous phase leads to a large increase of the resistivity with time (resistance drift), which has up to now hindered the development of ultra-high multi-level storage devices. A review of the current understanding of all these issues is provided from a materials science point of view.

Multiplexed Holographic Data Storage in Bacteriorhodopsin

NASA Technical Reports Server (NTRS)

Mehrl, David J.; Krile, Thomas F.

1999-01-01

Biochrome photosensitive films in particular Bacteriorhodopsin exhibit features which make these materials an attractive recording medium for optical data storage and processing. Bacteriorhodopsin films find numerous applications in a wide range of optical data processing applications; however the short-term memory characteristics of BR limits their applications for holographic data storage. The life-time of the BR can be extended using cryogenic temperatures [1], although this method makes the system overly complicated and unstable. Longer life-times can be provided in one modification of BR - the "blue" membrane BR [2], however currently available films are characterized by both low diffraction efficiency and difficulties in providing photoreversible recording. In addition, as a dynamic recording material, the BR requires different wavelengths for recording and reconstructing of optical data in order to prevent the information erasure during its readout. This fact also put constraints on a BR-based Optical Memory, due to information loss in holographic memory systems employing the two-lambda technique for reading-writing thick multiplexed holograms.

Research on materials for advanced electronic and aerospace application. [including optical and magnetic data processing, stress corrosion and H2 interaction, and polymeric systems

NASA Technical Reports Server (NTRS)

1975-01-01

Development and understanding of materials most suitable for use in compact magnetic and optical memory systems are discussed. Suppression of metal deterioration by hydrogen is studied. Improvement of mechanical properties of polymers is considered, emphasizing low temperature ductility and compatibility with high modulus fiber materials.

A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

PubMed

Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

2018-03-01

Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

INVESTIGATION OF INORGANIC PHOTOTROPIC MATERIALS AS A BI-OPTIC ELEMENT APPLICABLE IN HIGH DENSITY STORAGE COMPUTER MEMORIES

DTIC Science & Technology

A general valuation of the various types of phototropic (i.e., reversible, light induced, color producing) phenomenon is given regarding the...application of phototropic material to bioptic high density storage media for compu er memories. The inorganic ’’F’’ center type phototropic systems were

Controlling the volatility of the written optical state in electrochromic DNA liquid crystals

NASA Astrophysics Data System (ADS)

Liu, Kai; Varghese, Justin; Gerasimov, Jennifer Y.; Polyakov, Alexey O.; Shuai, Min; Su, Juanjuan; Chen, Dong; Zajaczkowski, Wojciech; Marcozzi, Alessio; Pisula, Wojciech; Noheda, Beatriz; Palstra, Thomas T. M.; Clark, Noel A.; Herrmann, Andreas

2016-05-01

Liquid crystals are widely used in displays for portable electronic information display. To broaden their scope for other applications like smart windows and tags, new material properties such as polarizer-free operation and tunable memory of a written state become important. Here, we describe an anhydrous nanoDNA-surfactant thermotropic liquid crystal system, which exhibits distinctive electrically controlled optical absorption, and temperature-dependent memory. In the liquid crystal isotropic phase, electric field-induced colouration and bleaching have a switching time of seconds. Upon transition to the smectic liquid crystal phase, optical memory of the written state is observed for many hours without applied voltage. The reorientation of the DNA-surfactant lamellar layers plays an important role in preventing colour decay. Thereby, the volatility of optoelectronic state can be controlled simply by changing the phase of the material. This research may pave the way for developing a new generation of DNA-based, phase-modulated, photoelectronic devices.

Holography and optical information processing; Proceedings of the Soviet-Chinese Joint Seminar, Bishkek, Kyrgyzstan, Sept. 21-26, 1991

NASA Astrophysics Data System (ADS)

Mikaelian, Andrei L.

Attention is given to data storage, devices, architectures, and implementations of optical memory and neural networks; holographic optical elements and computer-generated holograms; holographic display and materials; systems, pattern recognition, interferometry, and applications in optical information processing; and special measurements and devices. Topics discussed include optical immersion as a new way to increase information recording density, systems for data reading from optical disks on the basis of diffractive lenses, a new real-time optical associative memory system, an optical pattern recognition system based on a WTA model of neural networks, phase diffraction grating for the integral transforms of coherent light fields, holographic recording with operated sensitivity and stability in chalcogenide glass layers, a compact optical logic processor, a hybrid optical system for computing invariant moments of images, optical fiber holographic inteferometry, and image transmission through random media in single pass via optical phase conjugation.

Optical read/write memory system components

NASA Technical Reports Server (NTRS)

Kozma, A.

1972-01-01

The optical components of a breadboard holographic read/write memory system have been fabricated and the parameters specified of the major system components: (1) a laser system; (2) an x-y beam deflector; (3) a block data composer; (4) the read/write memory material; (5) an output detector array; and (6) the electronics to drive, synchronize, and control all system components. The objectives of the investigation were divided into three concurrent phases: (1) to supply and fabricate the major components according to the previously established specifications; (2) to prepare computer programs to simulate the entire holographic memory system so that a designer can balance the requirements on the various components; and (3) to conduct a development program to optimize the combined recording and reconstruction process of the high density holographic memory system.

Electrically and Optically Readable Light Emitting Memories

PubMed Central

Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

2014-01-01

Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. PMID:24894723

Study of reflection gratings recorded in polyvinyl alcohol/acrylamide-based photopolymer.

PubMed

Fuentes, Rosa; Fernández, Elena; García, Celia; Beléndez, Augusto; Pascual, Inmaculada

2009-12-01

High-spatial-frequency fringes associated with reflection holographic optical elements are difficult to obtain with currently available recording materials. In this work, holographic reflection gratings were stored in a polyvinyl alcohol/acrylamide photopolymer. This material is formed of acrylamide photopolymer, which is considered interesting material for optical storage applications such as holographic memories. The experimental procedure for examining the high-spatial-frequency response of this material is explained, and the experimental results obtained are presented. With the aim of obtaining the best results, the performance of different material compositions is compared.

Optical memory development. Volume 2: Gain-assisted holographic storage media

NASA Technical Reports Server (NTRS)

Gange, R. A.; Mezrich, R. S.

1972-01-01

Thin deformable films were investigated for use as the storage medium in a holographic optical memory. The research was directed toward solving the problems of material fatigue, selective heat addressing, electrical charging of the film surface and charge patterning by light. A number of solutions to these problems were found but the main conclusion to be drawn from the work is that deformable media which employ heat in the recording process are not satisfactory for use in a high-speed random-access read/write holographic memory. They are, however, a viable approach in applications where either high speed or random-access is not required.

Shape memory polymer (SMP) gripper with a release sensing system

DOEpatents

Maitland, Duncan J.; Lee, Abraham P.; Schumann, Daniel L.; Silva, Luiz Da

2000-01-01

A system for releasing a target material, such as an embolic coil from an SMP located at the end of a catheter utilizing an optical arrangement for releasing the material. The system includes a laser, laser driver, display panel, photodetector, fiber optics coupler, fiber optics and connectors, a catheter, and an SMP-based gripper, and includes a release sensing and feedback arrangement. The SMP-based gripper is heated via laser light through an optic fiber causing the gripper to release a target material (e.g., embolic coil for therapeutic treatment of aneurysms). Various embodiments are provided for coupling the laser light into the SMP, which includes specific positioning of the coils, removal of the fiber cladding adjacent the coil, a metal coating on the SMP, doping the SMP with a gradient absorbing dye, tapering the fiber optic end, coating the SMP with low refractive index material, and locating an insert between the fiber optic and the coil.

Nitrogen-doped partially reduced graphene oxide rewritable nonvolatile memory.

PubMed

Seo, Sohyeon; Yoon, Yeoheung; Lee, Junghyun; Park, Younghun; Lee, Hyoyoung

2013-04-23

As memory materials, two-dimensional (2D) carbon materials such as graphene oxide (GO)-based materials have attracted attention due to a variety of advantageous attributes, including their solution-processability and their potential for highly scalable device fabrication for transistor-based memory and cross-bar memory arrays. In spite of this, the use of GO-based materials has been limited, primarily due to uncontrollable oxygen functional groups. To induce the stable memory effect by ionic charges of a negatively charged carboxylic acid group of partially reduced graphene oxide (PrGO), a positively charged pyridinium N that served as a counterion to the negatively charged carboxylic acid was carefully introduced on the PrGO framework. Partially reduced N-doped graphene oxide (PrGODMF) in dimethylformamide (DMF) behaved as a semiconducting nonvolatile memory material. Its optical energy band gap was 1.7-2.1 eV and contained a sp2 C═C framework with 45-50% oxygen-functionalized carbon density and 3% doped nitrogen atoms. In particular, rewritable nonvolatile memory characteristics were dependent on the proportion of pyridinum N, and as the proportion of pyridinium N atom decreased, the PrGODMF film lost memory behavior. Polarization of charged PrGODMF containing pyridinium N and carboxylic acid under an electric field produced N-doped PrGODMF memory effects that followed voltage-driven rewrite-read-erase-read processes.

Amorphous blue phase III polymer scaffold as a sub-millisecond switching electro-optical memory device

NASA Astrophysics Data System (ADS)

Gandhi, Sahil Sandesh; Kim, Min Su; Hwang, Jeoung-Yeon; Chien, Liang-Chy

2017-02-01

We demonstrate the application of the nanostructured scaffold of BPIII as a resuable EO device that retains the BPIII ordering and sub-millisecond EO switching characteristics, that is, "EO-memory" of the original BPIII even after removal of the cholesteric blue phase liquid crystal (LC) and subsequent refilling with different nematic LCs. We also fabricate scaffolds mimicking the isotropic phase and cubic blue phase I (BPI) to demonstrate the versatility of our material system to nano-engineer EO-memory scaffolds of various structures. We envisage that this work will promote new experimental investigations of the mysterious BPIII and the development of novel device architectures and optically functional nanomaterials.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.

PubMed

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-27

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

NASA Astrophysics Data System (ADS)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Calculation of optical parameters for covalent binary alloys used in optical memories/solar cells: a modified approach

NASA Astrophysics Data System (ADS)

Bhatnagar, Promod K.; Gupta, Poonam; Singh, Laxman

2001-06-01

Chalcogenide based alloys find applications in a number of devices like optical memories, IR detectors, optical switches, photovoltaics, compound semiconductor heterosrtuctures etc. We have modified the Gurman's statistical thermodynamic model (STM) of binary covalent alloys. In the Gurman's model, entropy calculations are based on the number of structural units present. The need to modify this model arose due to the fact that it gives equal probability for all the tetrahedra present in the alloy. We have modified the Gurman's model by introducing the concept that the entropy is based on the bond arrangement rather than that on the structural units present. In the present work calculation based on this modification have been presented for optical properties, which find application in optical switching/memories, solar cells and other optical devices. It has been shown that the calculated optical parameters (for a typical case of GaxSe1-x) based on modified model are closer to the available experimental results. These parameters include refractive index, extinction coefficient, dielectric functions, optical band gap etc. GaxSe1-x has been found to be suitable for reversible optical memories also, where phase change (a yields c and vice versa) takes place at specified physical conditions. DTA/DSC studies also suggest the suitability of this material for optical switching/memory applications. We have also suggested possible use of GaxSe1-x (x = 0.4) in place of oxide layer in a Metal - Oxide - Semiconductor type solar cells. The new structure is Metal - Ga2Se3 - GaAs. The I-V characteristics and other parameters calculated for this structure are found to be much better than that for Si based solar cells. Maximum output power is obtained at the intermediate layer thickness approximately 40 angstroms for this typical solar cell.

Photoisomerization-induced manipulation of single-electron tunneling for novel Si-based optical memory.

PubMed

Hayakawa, Ryoma; Higashiguchi, Kenji; Matsuda, Kenji; Chikyow, Toyohiro; Wakayama, Yutaka

2013-11-13

We demonstrated optical manipulation of single-electron tunneling (SET) by photoisomerization of diarylethene molecules in a metal-insulator-semiconductor (MIS) structure. Stress is placed on the fact that device operation is realized in the practical device configuration of MIS structure and that it is not achieved in structures based on nanogap electrodes and scanning probe techniques. Namely, this is a basic memory device configuration that has the potential for large-scale integration. In our device, the threshold voltage of SET was clearly modulated as a reversible change in the molecular orbital induced by photoisomerization, indicating that diarylethene molecules worked as optically controllable quantum dots. These findings will allow the integration of photonic functionality into current Si-based memory devices, which is a unique feature of organic molecules that is unobtainable with inorganic materials. Our proposed device therefore has enormous potential for providing a breakthrough in Si technology.

Design rules for phase-change materials in data storage applications.

PubMed

Lencer, Dominic; Salinga, Martin; Wuttig, Matthias

2011-05-10

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stimulated electronic transition concept for an erasable optical memory

NASA Technical Reports Server (NTRS)

Albin, Sacharia; Satira, James D.; Livingston, David L.; Shull, Thomas A.

1992-01-01

A new concept for an erasable optical memory is demonstrated using stimulated electronic transition (SET). Large bandgap semiconductors are suitable materials for the SET medium. The properties of MgS:Eu,Sm and SrS:Eu,Sm as possible media for the SET process are investigated. Quantum storage is achieved in the form of charges in deep levels in the medium and stimulated radiative recombination is used as the reading process. Unlike magneto-optic (M-O) and phase change (PC) processes, optical writing, reading and erasing are achieved without localized heating. The SET process will have an inherently faster data transfer rate and a higher storage density, and the medium will be more durable than the M-O and PC media. A possible application of the SET process in neural networks is also discussed.

Coherence time of over a second in a telecom-compatible quantum memory storage material

NASA Astrophysics Data System (ADS)

Rančić, Miloš; Hedges, Morgan P.; Ahlefeldt, Rose L.; Sellars, Matthew J.

2018-01-01

Quantum memories for light will be essential elements in future long-range quantum communication networks. These memories operate by reversibly mapping the quantum state of light onto the quantum transitions of a material system. For networks, the quantum coherence times of these transitions must be long compared to the network transmission times, approximately 100 ms for a global communication network. Due to a lack of a suitable storage material, a quantum memory that operates in the 1,550 nm optical fibre communication band with a storage time greater than 1 μs has not been demonstrated. Here we describe the spin dynamics of 167Er3+: Y2SiO5 in a high magnetic field and demonstrate that this material has the characteristics for a practical quantum memory in the 1,550 nm communication band. We observe a hyperfine coherence time of 1.3 s. We also demonstrate efficient spin pumping of the entire ensemble into a single hyperfine state, a requirement for broadband spin-wave storage. With an absorption of 70 dB cm-1 at 1,538 nm and Λ transitions enabling spin-wave storage, this material is the first candidate identified for an efficient, broadband quantum memory at telecommunication wavelengths.

Time-domain separation of optical properties from structural transitions in resonantly bonded materials.

PubMed

Waldecker, Lutz; Miller, Timothy A; Rudé, Miquel; Bertoni, Roman; Osmond, Johann; Pruneri, Valerio; Simpson, Robert E; Ernstorfer, Ralph; Wall, Simon

2015-10-01

The extreme electro-optical contrast between crystalline and amorphous states in phase-change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise owing to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase-change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 fs owing to a rapid depletion of electrons from resonantly bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2-ps time constant. The optical changes are an order of magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

Evaluation of Ferroelectric Materials for Memory Applications

DTIC Science & Technology

1990-06-01

as automobile odometers, access counters, and flight time recorders. Detailed product information is provided in Appendix A. 3. Optical Read...volatility but by definition are not reprogrammable , which severely restricts flexibility and makes error correction difficult. Magnetic core is non...battery-backed SRAMs as well. The programs for embedded controllers, such as those increasingly used in automobiles , are kept in nonvolatile memory. The

Engineered materials for all-optical helicity-dependent magnetic switching

NASA Astrophysics Data System (ADS)

Mangin, S.; Gottwald, M.; Lambert, C.-H.; Steil, D.; Uhlíř, V.; Pang, L.; Hehn, M.; Alebrand, S.; Cinchetti, M.; Malinowski, G.; Fainman, Y.; Aeschlimann, M.; Fullerton, E. E.

2014-03-01

The possibility of manipulating magnetic systems without applied magnetic fields have attracted growing attention over the past fifteen years. The low-power manipulation of the magnetization, preferably at ultrashort timescales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization in engineered magnetic materials. We demonstrate that all-optical helicity-dependent switching (AO-HDS) can be observed not only in selected rare earth-transition metal (RE-TM) alloy films but also in a much broader variety of materials, including RE-TM alloys, multilayers and heterostructures. We further show that RE-free Co-Ir-based synthetic ferrimagnetic heterostructures designed to mimic the magnetic properties of RE-TM alloys also exhibit AO-HDS. These results challenge present theories of AO-HDS and provide a pathway to engineering materials for future applications based on all-optical control of magnetic order.

JPRS Report (Erratum), Science & Technology, Japan, Selections from MITI White Paper on Industrial Technology Trends and Issues

DTIC Science & Technology

1989-08-30

year period in the following products: Technology Field Product New materials Composite materials Amorphous alloys Macromolecule separation...plastics 8. Composite materials B. Parts 9. Optical fiber 10. Semiconductor lasers 11. CCD 12. Semiconductor memory elements 13. Microcomputers...separation. Composite materials (containing carbon fiber) (1) Aerospace users required strict specifi cations for carbon fiber, resulting in

A single-atom quantum memory.

PubMed

Specht, Holger P; Nölleke, Christian; Reiserer, Andreas; Uphoff, Manuel; Figueroa, Eden; Ritter, Stephan; Rempe, Gerhard

2011-05-12

The faithful storage of a quantum bit (qubit) of light is essential for long-distance quantum communication, quantum networking and distributed quantum computing. The required optical quantum memory must be able to receive and recreate the photonic qubit; additionally, it must store an unknown quantum state of light better than any classical device. So far, these two requirements have been met only by ensembles of material particles that store the information in collective excitations. Recent developments, however, have paved the way for an approach in which the information exchange occurs between single quanta of light and matter. This single-particle approach allows the material qubit to be addressed, which has fundamental advantages for realistic implementations. First, it enables a heralding mechanism that signals the successful storage of a photon by means of state detection; this can be used to combat inevitable losses and finite efficiencies. Second, it allows for individual qubit manipulations, opening up avenues for in situ processing of the stored quantum information. Here we demonstrate the most fundamental implementation of such a quantum memory, by mapping arbitrary polarization states of light into and out of a single atom trapped inside an optical cavity. The memory performance is tested with weak coherent pulses and analysed using full quantum process tomography. The average fidelity is measured to be 93%, and low decoherence rates result in qubit coherence times exceeding 180  microseconds. This makes our system a versatile quantum node with excellent prospects for applications in optical quantum gates and quantum repeaters.

CXRO - The Center for X-ray Optics

Science.gov Websites

advanced experimental systems to address national needs, support research in material, life, and provides a stepping stone for realizing stable and highly scalable (10 nm and below) non-volatile memory

Apparatus for loading shape memory gripper mechanisms

DOEpatents

Lee, Abraham P.; Benett, William J.; Schumann, Daniel L.; Krulevitch, Peter A.; Fitch, Joseph P.

2001-01-01

A method and apparatus for loading deposit material, such as an embolic coil, into a shape memory polymer (SMP) gripping/release mechanism. The apparatus enables the application of uniform pressure to secure a grip by the SMP mechanism on the deposit material via differential pressure between, for example, vacuum within the SMP mechanism and hydrostatic water pressure on the exterior of the SMP mechanism. The SMP tubing material of the mechanism is heated to above the glass transformation temperature (Tg) while reshaping, and subsequently cooled to below Tg to freeze the shape. The heating and/or cooling may, for example, be provided by the same water applied for pressurization or the heating can be applied by optical fibers packaged to the SMP mechanism for directing a laser beam, for example, thereunto. At a point of use, the deposit material is released from the SMP mechanism by reheating the SMP material to above the temperature Tg whereby it returns to its initial shape. The reheating of the SM material may be carried out by injecting heated fluid (water) through an associated catheter or by optical fibers and an associated beam of laser light, for example.

Method for loading shape memory polymer gripper mechanisms

DOEpatents

Lee, Abraham P.; Benett, William J.; Schumann, Daniel L.; Krulevitch, Peter A.; Fitch, Joseph P.

2002-01-01

A method and apparatus for loading deposit material, such as an embolic coil, into a shape memory polymer (SMP) gripping/release mechanism. The apparatus enables the application of uniform pressure to secure a grip by the SMP mechanism on the deposit material via differential pressure between, for example, vacuum within the SMP mechanism and hydrostatic water pressure on the exterior of the SMP mechanism. The SMP tubing material of the mechanism is heated to above the glass transformation temperature (Tg) while reshaping, and subsequently cooled to below Tg to freeze the shape. The heating and/or cooling may, for example, be provided by the same water applied for pressurization or the heating can be applied by optical fibers packaged to the SMP mechanism for directing a laser beam, for example, thereunto. At a point of use, the deposit material is released from the SMP mechanism by reheating the SMP material to above the temperature Tg whereby it returns to its initial shape. The reheating of the SMP material may be carried out by injecting heated fluid (water) through an associated catheter or by optical fibers and an associated beam of laser light, for example.

Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Zhu, Min; Peng, Cheng; Yao, Dongning; Song, Sannian; Liu, Bo; Feng, Songlin

2012-10-01

Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spectroscopy. C atoms are found to significantly enhance the thermal stability of amorphous Ge2Sb2Te5 by increasing the degree of disorder of the amorphous phase. The reversible electrical switching capability of the phase-change memory cells is improved in terms of power consumption with carbon addition. The endurance of ˜2.1 × 104 cycles suggests that C-doped Ge2Sb2Te5 film will be a potential phase-change material for high-density storage application.

Organo-metallic elements for associative information processing

NASA Astrophysics Data System (ADS)

Potember, Richard S.; Poehler, Theodore O.

1989-01-01

In the three years of the program we have: (1) built and tested a 4 bit element matrix device for possible use in high density content-addressable memories systems; (2) established a test and evaluation laboratory to examine optical materials for nonlinear effects, saturable absorption, harmonic generation and photochromism; (3) successfully designed, constructed and operated a codeposition processing system that enables organic materials to be deposited on a variety of substrates to produce optical grade coatings and films. This system is also compatible with other traditional microelectronic techniques; (4) used the sol-gel process with colloidal AgTCNQ to fabricate high speed photochromic switches; (5) develop and applied for patent coverage to make VO2 optical switching materials via the sol-gel processing using vanadium (IV) alkoxide compounds.

Carbon nanomaterials for non-volatile memories

NASA Astrophysics Data System (ADS)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits.

PubMed

Lu, Yegang; Stegmaier, Matthias; Nukala, Pavan; Giambra, Marco A; Ferrari, Simone; Busacca, Alessandro; Pernice, Wolfram H P; Agarwal, Ritesh

2017-01-11

Phase change materials (PCMs) are highly attractive for nonvolatile electrical and all-optical memory applications because of unique features such as ultrafast and reversible phase transitions, long-term endurance, and high scalability to nanoscale dimensions. Understanding their transient characteristics upon phase transition in both the electrical and the optical domains is essential for using PCMs in future multifunctional optoelectronic circuits. Here, we use a PCM nanowire embedded into a nanophotonic circuit to study switching dynamics in mixed-mode operation. Evanescent coupling between light traveling along waveguides and a phase-change nanowire enables reversible phase transition between amorphous and crystalline states. We perform time-resolved measurements of the transient change in both the optical transmission and resistance of the nanowire and show reversible switching operations in both the optical and the electrical domains. Our results pave the way toward on-chip multifunctional optoelectronic integrated devices, waveguide integrated memories, and hybrid processing applications.

Phase-change memory function of correlated electrons in organic conductors

NASA Astrophysics Data System (ADS)

Oike, H.; Kagawa, F.; Ogawa, N.; Ueda, A.; Mori, H.; Kawasaki, M.; Tokura, Y.

2015-01-01

Phase-change memory (PCM), a promising candidate for next-generation nonvolatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions emerging from a charge-configuration degree of freedom in strongly correlated electron systems. Nonvolatile reversible switching between a high-resistivity charge-crystalline (or charge-ordered) state and a low-resistivity quenched state, charge glass, is achieved experimentally via heat pulses supplied by optical or electrical means in organic conductors θ -(BEDT-TTF)2X . Switching that is one order of magnitude faster is observed in another isostructural material that requires faster cooling to kinetically avoid charge crystallization, indicating that the material's critical cooling rate can be useful guidelines for pursuing a faster correlated-electron PCM function.

Proceedings of the 4th Annual Workshop: Advances in Smart Materials for Aerospace Applications

NASA Technical Reports Server (NTRS)

Hardy, Robin C. (Editor); Simpson, Joycelyn O. (Editor)

1996-01-01

The objective of the Fourth Annual Conference on Advances in Smart Materials for Aerospace Applications was to provide a forum for technical dialogue on numerous topics in the area of smart materials. The proceedings presented herein represent the technical contributions of the participants of the workshop. Topics addressed include shape memory alloys, ferroelectrics, fiber optics, finite element simulation, and active control.

Scientific developments of liquid crystal-based optical memory: a review

NASA Astrophysics Data System (ADS)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Scientific developments of liquid crystal-based optical memory: a review.

PubMed

Prakash, Jai; Chandran, Achu; Biradar, Ashok M

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Optically Programmable Field Programmable Gate Arrays (FPGA) Systems

DTIC Science & Technology

2004-01-01

VCSEL requires placing the array far enough as to overlap the entire footprint of the signal beam in order to record the hologram. Therefore, these...hologram that self-focuses, due to phase -conjugation, on the array of detectors in the chip. VC A 10 m m 10 mm 18mm 16mm SEL RRAY OPTICAL MEMORY LOGIC...the VCSEL array , the chip and the optical material, and the requirements they have to meet for their use in the OPGA system. Section

Holographic data storage crystals for the LDEF. [long duration exposure facility

NASA Technical Reports Server (NTRS)

Callen, W. Russell; Gaylord, Thomas K.

1992-01-01

Lithium niobate is a significant electro-optic material, with potential applications in ultra high capacity storage and processing systems. Lithium niobate is the material of choice for many integrated optical devices and holographic mass memory systems. For crystals of lithium niobate were passively exposed to the space environment of the Long Duration Exposure Facility (LDEF). Three of these crystals contained volume holograms. Although the crystals suffered the surface damage characteristics of most of the other optical components on the Georgia Tech tray, the crystals were recovered intact. The holograms were severely degraded because of the lengthy exposure, but the bulk properties are being investigated to determine the spaceworthiness for space data storage and retrieval systems.

Radiation dosimetry using three-dimensional optical random access memories

NASA Technical Reports Server (NTRS)

Moscovitch, M.; Phillips, G. W.

2001-01-01

Three-dimensional optical random access memories (3D ORAMs) are a new generation of high-density data storage devices. Binary information is stored and retrieved via a light induced reversible transformation of an ensemble of bistable photochromic molecules embedded in a polymer matrix. This paper describes the application of 3D ORAM materials to radiation dosimetry. It is shown both theoretically and experimentally, that ionizing radiation in the form of heavy charged particles is capable of changing the information originally stored on the ORAM material. The magnitude and spatial distribution of these changes are used as a measure of the absorbed dose, particle type and energy. The effects of exposure on 3D ORAM materials have been investigated for a variety of particle types and energies, including protons, alpha particles and 12C ions. The exposed materials are observed to fluoresce when exposed to laser light. The intensity and the depth of the fluorescence is dependent on the type and energy of the particle to which the materials were exposed. It is shown that these effects can be modeled using Monte Carlo calculations. The model provides a better understanding of the properties of these materials. which should prove useful for developing systems for charged particle and neutron dosimetry/detector applications. c2001 Published by Elsevier Science B.V.

Encrypted optical storage with wavelength-key and random phase codes.

PubMed

Matoba, O; Javidi, B

1999-11-10

An encrypted optical memory system that uses a wavelength code as well as input and Fourier-plane random phase codes is proposed. Original data are illuminated by a coherent light source with a specified wavelength and are then encrypted with two random phase codes before being stored holographically in a photorefractive material. Successful decryption requires the use of a readout beam with the same wavelength as that used in the recording, in addition to the correct phase key in the Fourier plane. The wavelength selectivity of the proposed system is evaluated numerically. We show that the number of available wavelength keys depends on the correlation length of the phase key in the Fourier plane. Preliminary experiments of encryption and decryption of optical memory in a LiNbO(3):Fe photorefractive crystal are demonstrated.

Atomic structure and pressure-induced phase transformations in a phase-change alloy

NASA Astrophysics Data System (ADS)

Xu, Ming

Phase-change materials exist in at least two phases under the ambient condition. One is the amorphous state and another is crystalline phase. These two phases have vastly different physical properties, such as electrical conductivity, optical reflectivity, mass density, thermal conductivity, etc. The distinct physical properties and the fast transformation between amorphous and crystalline phases render these materials the ability to store information. For example, the DVD and the Blue-ray discs take advantage of the optical reflectivity contrast, and the newly developed solid-state memories make use of the large conductivity difference. In addition, both the amorphous and crystalline phases in phase-change memories (PCMs) are very stable at room temperature, and they are easy to be scaled up in the production of devices with large storage density. All these features make phase-change materials the ideal candidates for the next-generation memories. Despite of the fast development of these new memory materials in industry, many fundamental physics problems underlying these interesting materials are still not fully resolved. This thesis is aiming at solving some of the key issues in phase-change materials. Most of phase-change materials are composed of Ge-Sb-Te constituents. Among all these Ge-Sb-Te based materials, Ge2Sb2Te5 (GST) has the best performance and has been frequently studied as a prototypical phase-change material. The first and foremost issue is the structure of the two functioning phases. In this thesis, we investigate the unique atomic structure and bonding nature of amorphous GST (a-GST) and crystalline GST ( c-GST), using ab initio tools and X-ray diffraction (XRD) methods. Their local structures and bonding scenarios are then analyzed using electronic structure calculations. In order to gain insight into the fast phase transformation mechanism, we also carried out a series of high-pressure experiments on GST. Several new polymorphs and their transformations have been revealed under high pressure via in situ XRD and in situ electrical resistivity measurements. The mechanisms of the structural and property changes have been uncovered via ab initio molecular dynamics simulations.

Review of optical memory technologies

NASA Technical Reports Server (NTRS)

Chen, D.

1972-01-01

Optical technologies for meeting the demands of large capacity fast access time memory are discussed in terms of optical phenomena and laser applications. The magneto-optic and electro-optic approaches are considered to be the most promising memory approaches.

Relation between bandgap and resistance drift in amorphous phase change materials

PubMed Central

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-01-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift. PMID:26621533

Relation between bandgap and resistance drift in amorphous phase change materials.

PubMed

Rütten, Martin; Kaes, Matthias; Albert, Andreas; Wuttig, Matthias; Salinga, Martin

2015-12-01

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on amorphous thin films of the three phase change materials Ag4In3Sb67Te26, GeTe and the most popular Ge2Sb2Te5. A widening of the bandgap upon annealing accompanied by a decrease of the optical dielectric constant ε∞ is observed for all three materials. Quantitative comparison with experimental data for the apparent activation energy of conduction reveals that the temporal evolution of bandgap and activation energy can be decoupled. The case of Ag4In3Sb67Te26, where the increase of activation energy is significantly smaller than the bandgap widening, demonstrates the possibility to identify new phase change materials with reduced resistance drift.

45 CFR 160.103 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-10-01

..., the following definitions apply to this subchapter: Act means the Social Security Act. Administrative..., statements, and other required documents. Electronic media means: (1) Electronic storage material on which...) and any removable/transportable digital memory medium, such as magnetic tape or disk, optical disk, or...

45 CFR 160.103 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-10-01

..., the following definitions apply to this subchapter: Act means the Social Security Act. Administrative..., statements, and other required documents. Electronic media means: (1) Electronic storage material on which...) and any removable/transportable digital memory medium, such as magnetic tape or disk, optical disk, or...

Engineered materials for all-optical helicity-dependent magnetic switching

NASA Astrophysics Data System (ADS)

Fullerton, Eric

2014-03-01

The possibilities of manipulating magnetization without applied magnetic fields have attracted growing attention over the last fifteen years. The low-power manipulation of magnetization, preferably at ultra-short time scales, has become a fundamental challenge with implications for future magnetic information memory and storage technologies. Here we explore the optical manipulation of the magnetization of engineered materials and devices using 100 fs optical pulses. We demonstrate that all optical - helicity dependent switching (AO-HDS) can be observed not only in selected rare-earth transition-metal (RE-TM) alloy films but also in a much broader variety of materials, including alloys, multilayers, heterostructures and RE-free Co-Ir-based synthetic ferrimagnets. The discovery of AO-HDS in RE-free TM-based synthetic ferrimagnets can enable breakthroughs for numerous applications since it exploits materials that are currently used in magnetic data storage, memories and logic technologies. In addition, this materials study of AO-HDS offers valuable insight into the underlying mechanisms involved. Indeed the common denominator of the diverse structures showing AO-HDS in this study is that two ferromagnetic sub-lattices exhibit magnetization compensation (and therefore angular momentum compensation) at temperatures near or above room temperature. We are highlighting that compensation plays a major role and that this compensation can be established at the atomic level as in alloys but also over a larger nanometers scale as in the multilayers or in heterostructures. We will also discuss the potential to extend AO-HDS to new classes of magnetic materials. This work was done in collaboration with S. Mangin, M. Gottwald, C-H. Lambert, D. Steil, V. Uhlíř, L. Pang, M. Hehn, S. Alebrand, M. Cinchetti, G. Malinowski, Y. Fainman, and M. Aeschlimann. Supported by the ANR-10-BLANC-1005 ``Friends,'' a grant from the Advanced Storage Technology Consortium, Partner University Fund ``Novel Magnetic Materials for Spin Torque Physics'' as well as the European Project (OP2M FP7-IOF-2011-298060).

Active holographic interconnects for interfacing volume storage

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Schwartz, Jay R.; Nelson, Arthur R.; Levin, Philip S.

1992-04-01

In order to achieve the promise of terabit/cm3 data storage capacity for volume holographic optical memory, two technological challenges must be met. Satisfactory storage materials must be developed and the input/output architectures able to match their capacity with corresponding data access rates must also be designed. To date the materials problem has received more attention than devices and architectures for access and addressing. Two philosophies of parallel data access to 3-D storage have been discussed. The bit-oriented approach, represented by recent work on two-photon memories, attempts to store bits at local sites within a volume without affecting neighboring bits. High speed acousto-optic or electro- optic scanners together with dynamically focused lenses not presently available would be required. The second philosophy is that volume optical storage is essentially holographic in nature, and that each data write or read is to be distributed throughout the material volume on the basis of angle multiplexing or other schemes consistent with the principles of holography. The requirements for free space optical interconnects for digital computers and fiber optic network switching interfaces are also closely related to this class of devices. Interconnects, beamlet generators, angle multiplexers, scanners, fiber optic switches, and dynamic lenses are all devices which may be implemented by holographic or microdiffractive devices of various kinds, which we shall refer to collectively as holographic interconnect devices. At present, holographic interconnect devices are either fixed holograms or spatial light modulators. Optically or computer generated holograms (submicron resolution, 2-D or 3-D, encoding 1013 bits, nearly 100 diffraction efficiency) can implement sophisticated mathematical design principles, but of course once fabricated they cannot be changed. Spatial light modulators offer high speed programmability but have limited resolution (512 X 512 pixels, encoding about 106 bits of data) and limited diffraction efficiency. For any application, one must choose between high diffractive performance and programmability.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Associative properties of a multichannel photon echo and optical memory

NASA Astrophysics Data System (ADS)

Bikbov, I. S.; Zuikov, V. A.; Popov, I. I.; Popova, G. L.; Samartsev, V. V.

1995-10-01

An analysis is made of the results of an investigation of the physical principles underlying the operation of an associative optical memory and of processors utilising the photon (optical) echo phenomenon. The feasibility of constructing such optical memories is considered.

Fabry-Perot confocal resonator optical associative memory

NASA Astrophysics Data System (ADS)

Burns, Thomas J.; Rogers, Steven K.; Vogel, George A.

1993-03-01

A unique optical associative memory architecture is presented that combines the optical processing environment of a Fabry-Perot confocal resonator with the dynamic storage and recall properties of volume holograms. The confocal resonator reduces the size and complexity of previous associative memory architectures by folding a large number of discrete optical components into an integrated, compact optical processing environment. Experimental results demonstrate the system is capable of recalling a complete object from memory when presented with partial information about the object. A Fourier optics model of the system's operation shows it implements a spatially continuous version of a discrete, binary Hopfield neural network associative memory.

Techniques for writing and reading data on an optical disk which include formation of holographic optical gratings in plural locations on the optical disk

NASA Technical Reports Server (NTRS)

Liu, Tsuen-Hsi (Inventor); Psaltis, Demetri (Inventor); Mok, Fai H. (Inventor); Zhou, Gan (Inventor)

2005-01-01

An optical memory for storing and/or reading data on an optical disk. The optical disk incorporates a material in which holographic gratings can be created, and subsequently detected, at plural locations within the disk by an electro-optical head. Creation and detection of holographic gratings with variable diffraction efficiency is possible with the electro-optical head. Multiple holographic gratings can also be created at each one of the plural locations via a beam of light which has a different wavelength or point of focus. These data elements can be read by the electro-optical head using a beam of light sequentially varied in wavelength or point of focus to correspond to the multiple holographic gratings to be recorded.

Two-dimensional multiferroics in monolayer group IV monochalcogenides

NASA Astrophysics Data System (ADS)

Wang, Hua; Qian, Xiaofeng

2017-03-01

Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that two-dimensional (2D) monolayer group IV monochalcogenides including GeS, GeSe, SnS, and SnSe are a class of 2D semiconducting multiferroics with giant strongly-coupled in-plane spontaneous ferroelectric polarization and spontaneous ferroelastic lattice strain that are thermodynamically stable at room temperature and beyond, and can be effectively modulated by elastic strain engineering. Their optical absorption spectra exhibit strong in-plane anisotropy with visible-spectrum excitonic gaps and sizable exciton binding energies, rendering the unique characteristics of low-dimensional semiconductors. More importantly, the predicted low domain wall energy and small migration barrier together with the coupled multiferroic order and anisotropic electronic structures suggest their great potentials for tunable multiferroic functional devices by manipulating external electrical, mechanical, and optical field to control the internal responses, and enable the development of four device concepts including 2D ferroelectric memory, 2D ferroelastic memory, and 2D ferroelastoelectric nonvolatile photonic memory as well as 2D ferroelectric excitonic photovoltaics.

The Effect of 4-Octyldecyloxybenzoic Acid on Liquid-Crystalline Polyurethane Composites with Triple-Shape Memory and Self-Healing Properties

PubMed Central

Ban, Jianfeng; Zhu, Linjiang; Chen, Shaojun; Wang, Yiping

2016-01-01

To better understand shape memory materials and self-healing materials, a new series of liquid-crystalline shape memory polyurethane (LC-SMPU) composites, named SMPU-OOBAm, were successfully prepared by incorporating 4-octyldecyloxybenzoic acid (OOBA) into the PEG-based SMPU. The effect of OOBA on the structure, morphology, and properties of the material has been carefully investigated. The results demonstrate that SMPU-OOBAm has liquid crystalline properties, triple-shape memory properties, and self-healing properties. The incorporated OOBA promotes the crystallizability of both soft and hard segments of SMPU, and the crystallization rate of the hard segment of SMPU decreases when the OOBA-content increases. Additionally, the SMPU-OOBAm forms a two-phase separated structure (SMPU phase and OOBA phase), and it shows two-step modulus changes upon heating. Therefore, the SMPU-OOBAm exhibits triple-shape memory behavior, and the shape recovery ratio decreases with an increase in the OOBA content. Finally, SMPU-OOBAm exhibits self-healing properties. The new mechanism can be ascribed to the heating-induced “bleeding” of OOBA in the liquid crystalline state and the subsequent re-crystallization upon cooling. This successful combination of liquid crystalline properties, triple-shape memory properties, and self-healing properties make the SMPU-OOBAm composites ideal for many promising applications in smart optical devices, smart electronic devices, and smart sensors. PMID:28773914

Optical tomographic memories: algorithms for the efficient information readout

NASA Astrophysics Data System (ADS)

Pantelic, Dejan V.

1990-07-01

Tomographic alogithms are modified in order to reconstruct the inf ormation previously stored by focusing laser radiation in a volume of photosensitive media. Apriori information about the position of bits of inf ormation is used. 1. THE PRINCIPLES OF TOMOGRAPHIC MEMORIES Tomographic principles can be used to store and reconstruct the inf ormation artificially stored in a bulk of a photosensitive media 1 The information is stored by changing some characteristics of a memory material (e. g. refractive index). Radiation from the two independent light sources (e. g. lasers) is f ocused inside the memory material. In this way the intensity of the light is above the threshold only in the localized point where the light rays intersect. By scanning the material the information can be stored in binary or nary format. When the information is stored it can be read by tomographic methods. However the situation is quite different from the classical tomographic problem. Here a lot of apriori information is present regarding the p0- sitions of the bits of information profile representing single bit and a mode of operation (binary or n-ary). 2. ALGORITHMS FOR THE READOUT OF THE TOMOGRAPHIC MEMORIES Apriori information enables efficient reconstruction of the memory contents. In this paper a few methods for the information readout together with the simulation results will be presented. Special attention will be given to the noise considerations. Two different

Graphene - ferroelectric and MoS2 - ferroelectric heterostructures for memory applications

NASA Astrophysics Data System (ADS)

Lipatov, Alexey; Sharma, Pankaj; Gruverman, Alexei; Sinitskii, Alexander

In recent years there has been an unprecedented interest in two-dimensional (2D) materials with unique physical and chemical properties that cannot be found in their three-dimensional (3D) counterparts. One of the important advantages of 2D materials is that they can be easily integrated with other 2D materials and functional films, resulting in multilayered structures with new properties. We fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on a single-layer graphene combined with lead zirconium titanate (PZT) substrate. Previously studied graphene-PZT devices exhibited an unusual electronic behavior such as clockwise hysteresis of electronic transport, in contradiction with counterclockwise polarization dependence of PZT. We investigated how the interplay of polarization and interfacial phenomena affects the electronic behavior and memory characteristics of graphene-PZT FETs, explain the origin of unusual clockwise hysteresis and experimentally demonstrate a reversed polarization-dependent hysteresis of electronic transport. In addition we fabricated and tested properties of MoS2-PZT FETs which exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that MoS2-PZT memories have a number of advantages over commercial FeRAMs, such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically.

Arbitrary unitary transformations on optical states using a quantum memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Geoff T.; Pinel, Olivier; Hosseini, Mahdi

2014-12-04

We show that optical memories arranged along an optical path can perform arbitrary unitary transformations on frequency domain optical states. The protocol offers favourable scaling and can be used with any quantum memory that uses an off-resonant Raman transition to reversibly transfer optical information to an atomic spin coherence.

The Current Status of the Development of Light-Sensitive Media for Holography (a Review)

NASA Astrophysics Data System (ADS)

Barachevsky, V. A.

2018-03-01

The results of studies that have been performed over the last decade in the field of development of silver halide and nonsilver holographic recording media of organic and inorganic origin are analyzed. It is shown that previously developed materials mainly allow the development of holographic investigations. Among irreversible materials, considerable progress has been made in improving the characteristics of photopolymerizable recording media, which has allowed their use in color image holography and 3D optical archive-type memory, as well as for fabricating holographic optical elements. In the field of improving the properties of reversible holographic recording media, practically significant results have been obtained for the creation of photoanisotropic materials based on azo dyes experiencing cis-trans photoisomerization, which allow the recording of polarization holograms. The needs of dynamic holography have been satisfied by lightsensitive doped inorganic crystals and polymer layers that have been created with nonlinear optical properties.

An ultra-fast optical shutter exploiting total light absorption in a phase change material

NASA Astrophysics Data System (ADS)

Jafari, Mohsen; Guo, L. Jay; Rais-Zadeh, Mina

2017-02-01

In this paper, we present an ultra-fast and high-contrast optical shutter with applications in atomic clock assemblies, integrated photonic systems, communication hardware, etc. The shutter design exploits the total light absorption phenomenon in a thin phase change (PC) material placed over a metal layer. The shutter switches between ON and OFF states by changing PC material phase and thus its refractive index. The PC material used in this work is Germanium Telluride (GeTe), a group IV-VI chalcogenide compound, which exhibits good optical contrast when switching from amorphous to crystalline state and vice versa. The stable phase changing behavior and reliability of GeTe and GeSbTe (GST) have been verified in optical memories and RF switches. Here, GeTe is used as it has a lower extinction coefficient in near-IR regions compared to GST. GeTe can be thermally transitioned between two phases by applying electrical pulses to an integrated heater. The memory behavior of GeTe results in zero static power consumption which is useful in applications requiring long time periods between switching activities. We previously demonstrated a meta-surface employing GeTe in sub-wavelength slits with >14 dB isolation at 1.5 μm by exciting the surface plasmon polariton and localized slit resonances. In this work, strong interference effects in a thin layer of GeTe over a gold mirror result in near total light absorption of up to 40 dB (21 dB measured) in the amorphous phase of the shutter at 780 nm with much less fabrication complexity. The optical loss at the shutter ON state is less than 1.5 dB. A nickel chrome (NiCr) heater provides the Joule heating energy required to achieve the crystallographic phase change. The measured switching speed is 2 μs.

High efficiency coherent optical memory with warm rubidium vapour

PubMed Central

Hosseini, M.; Sparkes, B.M.; Campbell, G.; Lam, P.K.; Buchler, B.C.

2011-01-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory. PMID:21285952

High efficiency coherent optical memory with warm rubidium vapour.

PubMed

Hosseini, M; Sparkes, B M; Campbell, G; Lam, P K; Buchler, B C

2011-02-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory.

An optoelectronic framework enabled by low-dimensional phase-change films.

PubMed

Hosseini, Peiman; Wright, C David; Bhaskaran, Harish

2014-07-10

The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent 'smart' glasses, 'smart' contact lenses and artificial retina devices.

Real Time Large Memory Optical Pattern Recognition.

DTIC Science & Technology

1984-06-01

AD-Ri58 023 REAL TIME LARGE MEMORY OPTICAL PATTERN RECOGNITION(U) - h ARMY MISSILE COMMAND REDSTONE ARSENAL AL RESEARCH DIRECTORATE D A GREGORY JUN...TECHNICAL REPORT RR-84-9 Ln REAL TIME LARGE MEMORY OPTICAL PATTERN RECOGNITION Don A. Gregory Research Directorate US Army Missile Laboratory JUNE 1984 L...RR-84-9 , ___/_ _ __ _ __ _ __ _ __"__ _ 4. TITLE (and Subtitle) S. TYPE OF REPORT & PERIOD COVERED Real Time Large Memory Optical Pattern Technical

Thermal modeling using enthalpy methods to aid in the study of microstructural changes of multilayered phase change optical memories

NASA Astrophysics Data System (ADS)

Nagpal, Swati; Aurora, Aradhna

1999-11-01

In DOW type of phase change optical memories the focus has been mainly on gestate based systems due to their good overwriting capability and very high order cyclability. To avoid the material deterioration problems such as material flow, high melting point, high viscosity or high-density components such as CrTe, (which have the same refractive index) can be added to the active layer. This has led to an improved performance of overwrite cycles from 105 to 106. Material flow occurs due to void formation. Voids and sinks are formed due to porosity of the active layer because the active layer has a density lower than that of the bulk material. One of the reasons for the formation and coalescence of voids is the way in which the film is deposited viz. Sputtering which makes Ar atoms accumulate in the films during deposition. Also the mechanical strength of the protective layer effects the repeatability of the active layer. All the above mentioned processes occur during melting and re- solidification of the nano-sized spots which are laser irradiated. Since the structure of the protective layers is very important in controlling the void formation, it is very important to study the thermal modeling of the full layer structure.

Auto- and hetero-associative memory using a 2-D optical logic gate

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

1989-01-01

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

Auto- and hetero-associative memory using a 2-D optical logic gate

NASA Astrophysics Data System (ADS)

Chao, Tien-Hsin

1989-06-01

An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.

A silicon-nanowire memory driven by optical gradient force induced bistability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, B.; Institute of Microelectronics, A*STAR; Cai, H., E-mail: caih@ime.a-star.edu.sg

2015-12-28

In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

Optoelectronic-cache memory system architecture.

PubMed

Chiarulli, D M; Levitan, S P

1996-05-10

We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.

Optically simulating a quantum associative memory

NASA Astrophysics Data System (ADS)

Howell, John C.; Yeazell, John A.; Ventura, Dan

2000-10-01

This paper discusses the realization of a quantum associative memory using linear integrated optics. An associative memory produces a full pattern of bits when presented with only a partial pattern. Quantum computers have the potential to store large numbers of patterns and hence have the ability to far surpass any classical neural-network realization of an associative memory. In this work two three-qubit associative memories will be discussed using linear integrated optics. In addition, corrupted, invented and degenerate memories are discussed.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

NASA Astrophysics Data System (ADS)

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

2018-05-01

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency.

PubMed

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A; Chen, Ying-Cheng

2018-05-04

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Configurable unitary transformations and linear logic gates using quantum memories.

PubMed

Campbell, G T; Pinel, O; Hosseini, M; Ralph, T C; Buchler, B C; Lam, P K

2014-08-08

We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

Excitation of photonic atoms (dielectric microspheres) on optical fibers: application to room-temperature persistent spectral hole burning

NASA Astrophysics Data System (ADS)

Serpenguzel, Ali; Arnold, Stephen; Griffel, Giora

1995-05-01

Recently, photonic atoms (dielectric microspheres) have enjoyed the attention of the optical spectroscopy community. A variety of linear and nonlinear optical processes have been observed in liquid microdroplets. But solid state photonic devices using these properties are scarce. A first of these applications is the room temperature microparticle hole-burning memory. New applications can be envisioned if microparticle resonances can be coupled to traveling waves in optical fibers. In this paper we demonstrate the excitation of narrow morphology dependent resonances of microparticles placed on an optical fiber. Furthermore we reveal a model for this process which describes the coupling efficiency in terms of the geometrical and material properties of the microparticle-fiber system.

New developments in optical phase-change memory

NASA Astrophysics Data System (ADS)

Ovshinsky, Stanford R.; Czubatyj, Wolodymyr

2001-02-01

Phase change technology has progressed from the original invention of Ovshinsky to become the leading choice for rewritable optical disks. ECD's early work in phase change materials and methods for operating in a direct overwrite fashion were crucial to the successes that have been achieved. Since the introduction of the first rewritable phase change products in 1991, the market has expanded from CD-RW into rewritable DVD with creative work going on worldwide. Phase change technology is ideally suited to address the continuous demand for increased storage capacity. First, laser beams can be focused to ever-smaller spot sizes using shorter wavelength lasers and higher performance optics. Blue lasers are now commercially viable and high numerical aperture and near field lenses have been demonstrated. Second, multilevel approaches can be used to increase capacity by a factor of three or more with concomitant increases in data transfer rate. In addition, ECD has decreased manufacturing costs through the use of innovative production technology. These factors combine to accelerate the widespread use of phase change technology. As in all our technologies, such as thin film photovoltaics, nickel metal hydride batteries, hydrogen storage systems, fuel cells, electrical memory, etc., we have invented the materials, the products, the production machines and the production processes for high rate, low-cost manufacture.

Fabrication method of two-photon luminescent organic nano-architectures using electron-beam irradiation

NASA Astrophysics Data System (ADS)

Kamura, Yoshio; Imura, Kohei

2018-06-01

Optical recording on organic thin films with a high spatial resolution is promising for high-density optical memories, optical computing, and security systems. The spatial resolution of the optical recording is limited by the diffraction of light. Electrons can be focused to a nanometer-sized spot, providing the potential for achieving better resolution. In conventional electron-beam lithography, however, optical tuning of the fabricated structures is limited mostly to metals and semiconductors rather than organic materials. In this article, we report a fabrication method of luminescent organic architectures using a focused electron beam. We optimized the fabrication conditions of the electron beam to generate chemical species showing visible photoluminescence via two-photon near-infrared excitations. We utilized this fabrication method to draw nanoscale optical architectures on a polystyrene thin film.

Effect of surface etching and electrodeposition of copper on nitinol

NASA Astrophysics Data System (ADS)

Ramos-Moore, E.; Rosenkranz, A.; Matamala, L. F.; Videla, A.; Durán, A.; Ramos-Grez, J.

2017-10-01

Nitinol-based materials are very promising for medical and dental applications since those materials can combine shape memory, corrosion resistance, biocompatibility and antibacterial properties. In particular, surface modifications and coating deposition can be used to tailor and to unify those properties. We report preliminary results on the study of the effect of surface etching and electrodeposition of Copper on Nitinol using optical, chemical and thermal techniques. The results show that surface etching enhances the surface roughness of Nitinol, induces the formation of Copper-based compounds at the Nitinol-Copper interface, reduces the austenitic-martensitic transformations enthalpies and reduces the Copper coating roughness. Further studies are needed in order to highlight the influence of the electrodeposited Copper on the memory shape properties of NiTi.

Solid solutions of MnSb as recording media in optical memory applications

NASA Astrophysics Data System (ADS)

Bai, V. S.; Rama Rao, K. V. S.

1984-03-01

Possibilities regarding the use of larger packing densities and faster access times make it potentially feasible to employ optical technology for the development of computer data storage systems with a performance which is 2-4 orders of magnitude better than that of conventional systems. The information can be stored on thin magnetic films using the technique of laser Curie point writing and retrieved with the aid of magnetooptic readout. Thin films of MnBi have been studied extensively as a prospective storage medium. However, certain difficulties arise in connection with a phase transformation. For these reasons, the present investigation is concerned with the possibility of employing as storage medium MnSb, in which such a phase transformation is absent. In the case of MnSb, a change regarding the easy direction of magnetization would be required. Attention is given to several solid solutions of MnSb and the merits of these materials for optical memory applications.

Optical Input/Electrical Output Memory Elements based on a Liquid Crystalline Azobenzene Polymer.

PubMed

Mosciatti, Thomas; Bonacchi, Sara; Gobbi, Marco; Ferlauto, Laura; Liscio, Fabiola; Giorgini, Loris; Orgiu, Emanuele; Samorì, Paolo

2016-03-01

Responsive polymer materials can change their properties when subjected to external stimuli. In this work, thin films of thermotropic poly(metha)acrylate/azobenzene polymers are explored as active layer in light-programmable, electrically readable memories. The memory effect is based on the reversible modifications of the film morphology induced by the photoisomerization of azobenzene mesogenic groups. When the film is in the liquid crystalline phase, the trans → cis isomerization induces a major surface reorganization on the mesoscopic scale that is characterized by a reduction in the effective thickness of the film. The film conductivity is measured in vertical two-terminal devices in which the polymer is sandwiched between a Au contact and a liquid compliant E-GaIn drop. We demonstrate that the trans → cis isomerization is accompanied by a reversible 100-fold change in the film conductance. In this way, the device can be set in a high- or low-resistance state by light irradiation at different wavelengths. This result paves the way toward the potential use of poly(metha)acrylate/azobenzene polymer films as active layer for optical input/electrical output memory elements.

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

NASA Technical Reports Server (NTRS)

Klimcak, C.; Jaduszliwer, B.

1995-01-01

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Optical bistability for optical signal processing and computing

NASA Astrophysics Data System (ADS)

Peyghambarian, N.; Gibbs, H. M.

1985-02-01

Optical bistability (OB) is a phenomenon in which a nonlinear medium responds to an optical input beam by changing its transmission abruptly from one value to another. A 'nonlinear medium' is a medium in which the index of refraction depends on the incident light intensity. A device is said to be optically bistable if two stable output states exist for the same value of the input. Optically bistable devices can perform a number of logic functions related to optical memory, optical transistor, optical discriminator, optical limiter, optical oscillator, and optical gate. They also have the potential for subpicosecond switching, greatly exceeding the capability of electronics. This potential is one of several advantages of optical data processing over electronic processing. Other advantages are greater immunity to electromagnetic interference and crosstalk, and highly parallel processing capability. The present investigation is mainly concerned with all-optical etalon devices. The considered materials, include GaAs, ZnS and ZnSe, CuCl, InSb, InAs, and CdS.

Noise reduction in optically controlled quantum memory

NASA Astrophysics Data System (ADS)

Ma, Lijun; Slattery, Oliver; Tang, Xiao

2018-05-01

Quantum memory is an essential tool for quantum communications systems and quantum computers. An important category of quantum memory, called optically controlled quantum memory, uses a strong classical beam to control the storage and re-emission of a single-photon signal through an atomic ensemble. In this type of memory, the residual light from the strong classical control beam can cause severe noise and degrade the system performance significantly. Efficiently suppressing this noise is a requirement for the successful implementation of optically controlled quantum memories. In this paper, we briefly introduce the latest and most common approaches to quantum memory and review the various noise-reduction techniques used in implementing them.

Current developments in optical engineering and diffraction phenomena; Proceedings of the Meeting, San Diego, CA, Aug. 21, 22, 1986

NASA Astrophysics Data System (ADS)

Fischer, Robert E.; Smith, Warren J.; Harvey, James

1986-01-01

Papers dealing with current materials for gradient-index optics, an intelligent data-base system for optical designers; tilted mirror systems; a null-lens design approach for centrally obscured components; the use of the vector aberration theory to optimize an unobscured optical system; multizone bifocal contact lens design; and the concentric meniscus element are presented. Topics discussed include optical manufacturing in the Far East; the optical performance of molded-glass lenses for optical memory applications; through-wafer optical interconnects for multiwafer wafer-scale integrated architecture; optical thin-flim monitoring using optical fibers; aerooptical testing; optical inspection; and a system analysis program for a 32K microcomputer. Consideration is given to various theories, algorithms, and applications of diffraction, a vector formulation of a ray-equivalent method for Gaussian beam propagation; Fourier optical analysis of aberrations in focused laser beams; holography and moire interferometry; and phase-conjugate optical correctors for diffraction-limited applications.

Strategic design and fabrication of acrylic shape memory polymers

NASA Astrophysics Data System (ADS)

Park, Ju Hyuk; Kim, Hansu; Ryoun Youn, Jae; Song, Young Seok

2017-08-01

Modulation of thermomechanics nature is a critical issue for an optimized use of shape memory polymers (SMPs). In this study, a strategic approach was proposed to control the transition temperature of SMPs. Free radical vinyl polymerization was employed for tailoring and preparing acrylic SMPs. Transition temperatures of the shape memory tri-copolymers were tuned by changing the composition of monomers. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy analyses were carried out to evaluate the chemical structures and compositions of the synthesized SMPs. The thermomechanical properties and shape memory performance of the SMPs were also examined by performing dynamic mechanical thermal analysis. Numerical simulation based on a finite element method provided consistent results with experimental cyclic shape memory tests of the specimens. Transient shape recovery tests were conducted and optical transparence of the samples was identified. We envision that the materials proposed in this study can help develop a new type of shape-memory devices in biomedical and aerospace engineering applications.

pH Memory Effects of Tunable Block Copolymer Photonic Gels and Their Applications

NASA Astrophysics Data System (ADS)

Kang, Youngjong; Thomas, Edwin L.

2007-03-01

Materials with hysteresis, showing a bistable state to the external stimuli, have been widely investigated due to their potential applications. For example, they could be used as memory devices or optical switches when they have magnetic or optical hysteresis response to the external stimuli. Here we report pH tunable photonic gels which are spontaneously assembled from block copolymers. The general idea of this research is based on the selective swelling of block copolymer lamellar mesogels, where the solubility of one block is responsive to the change of pH. In this system, the domain spacing of the lamellar is varied with the extent of swelling. As a model system, we used protonated polystyrene-b-poly(2-vinly pyridine) (PS-b-P2VP) block copolymers forming lamellar structures. The photonic gel films prepared from protonated PS-b-P2VP show a strong reflectance in aqueous solution and the band position was varied with pH. Interestingly, a very strong optical hysteresis was observed while the reflection band of photonic gels was tuned by changing pH. We anticipate that pH tunable photonic gels with hysteresis can be applicable to novel applications such as a component of memory devices, photonic switches or drug delivery vehicles.

Light emission from silicon: Some perspectives and applications

NASA Astrophysics Data System (ADS)

Fiory, A. T.; Ravindra, N. M.

2003-10-01

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and may be at hand soon. A key advantage is in the use of silicon-based materials and processing, thereby using high yield and low-cost fabrication techniques. Anticipated applications include an optical emitter for integrated optical circuits, logic, memory, and interconnects; electro-optic isolators; massively parallel optical interconnects and cross connects for integrated circuit chips; lightwave components; high-power discrete and array emitters; and optoelectronic nanocell arrays for detecting biological and chemical agents. The new technical approaches resolve a basic issue with native interband electro-optical emission from bulk Si, which competes with nonradiative phonon- and defect-mediated pathways for electron-hole recombination. Some of the new ways to enhance optical emission efficiency in Si diode devices rely on carrier confinement, including defect and strain engineering in the bulk material. Others use Si nanocrystallites, nanowires, and alloying with Ge and crystal strain methods to achieve the carrier confinement required to boost radiative recombination efficiency. Another approach draws on the considerable progress that has been made in high-efficiency, solar-cell design and uses the reciprocity between photo- and light-emitting diodes. Important advances are also being made with silicon-oxide materials containing optically active rare-earth impurities.

Fault tolerant function of dynamic refreshing holographic memory with shutter-less optical feedback circuit

NASA Astrophysics Data System (ADS)

Okamoto, Atsushi; Ito, Terumasa; Bunsen, Masatoshi; Takayama, Yoshihisa

2005-11-01

The optical system, consisting of two photorefractive memories and a shutter-less optical feedback circuit, will be demonstrated to function as data mirroring. This function is known to automatically detect the data dropout and restore data, using unimpaired data in another memory, in the event that part or all of the data in either of them were lost for some reason. This memory system also can cope with a damaged hologram, a result of reading beams, which is a disadvantage of rewritable photorefractive memory, to ensure non-destructive holographic reading. It can be achieved by using no electronic circuits or mechanical structures; our optical experimental method in particular obtains this basic action.

Study of in-situ formation of Fe-Mn-Si shape memory alloy welding seam by laser welding with filler powder

NASA Astrophysics Data System (ADS)

Ju, Heng; Lin, Chengxin; Liu, Zhijie; Zhang, Jiaqi

2018-08-01

To reduce the residual stresses and improve the mechanical properties of laser weldments, produced with the restrained mixing uniform design method, a Fe-Mn-Si shape memory alloy (SMA) welding seam was formed inside the 304 stainless steel by laser welding with powder filling. The mass fraction, shape memory effect, and phase composition of the welding seam was measured by SEM-EDS (photometric analyser), bending recovery method, and XRD, respectively. An optical microscope was used to observe the microstructure of the Fe-Mn-Si SMA welding seam by solid solution and pre-deformation treatment. Meanwhile, the mechanical properties (residual stress distribution, tensile strength, microhardness and fatigue strength) of the laser welded specimen with an Fe-Mn-Si SMA welding seam (experimental material) and a 304 stainless steel welding seam (contrast material) were measured by a tensile testing machine hole drilling method and full cycle bending fatigue test. The results show that Fe15Mn5Si12Cr6Ni SMA welding seam was formed in situ with shape memory effect and stress-induced γ → ε martensite phase transformation characteristic. The residual stress of the experimental material is lower than that of the contrast material. The former has larger tensile strength, longer elongation and higher microhardness than the latter has. The experimental material and contrast material possess 249 and 136 bending fatigue cycles at the strain of 6%, respectively. The mechanisms by which mechanical properties of the experimental material are strengthened includes (1) release of the residual stress inside the Fe-Mn-Si SMA welding seam due to the stress-induced γ → ε martensite phase transformation and (2) energy absorption and plastic slip restraint due to the deformations in martensite and reverse phase transformation.

Biologically active nanocomposite of DNA-PbS nanoparticles: A new material for non-volatile memory devices

NASA Astrophysics Data System (ADS)

Murgunde, B. K.; Rabinal, M. K.; Kalasad, M. N.

2018-01-01

Composite films of deoxyribonucleic acid (DNA) and lead sulfide (PbS) nanoparticles are prepared to fabricate biological memory devices. A simple solution based electrografting is developed to deposit large (few cm2) uniform films of DNA:PbS on conducting substrates. The films are studied by X-ray photoelectron spectroscopy, field emission SEM, FTIR and optical spectroscopy to understand their properties. Charge transport measurements are carried out on ITO-DNA:PbS-metal junctions by cyclic voltage scans, electrical bi-stability is observed with ON/OFF ratio more than ∼104 times with good stability and endurance, such performance being rarely reported. The observed results are interpreted in the light of strong electrostatic binding of nanoparticles and DNA stands, which leads doping of Pb atoms into DNA. As a result, these devices exhibit negative differential resistance (NDR) effect due to oxidation of doped metal atoms. These composites can be the potential materials in the development of new generation non-volatile memory devices.

Material platforms for spin-based photonic quantum technologies

NASA Astrophysics Data System (ADS)

Atatüre, Mete; Englund, Dirk; Vamivakas, Nick; Lee, Sang-Yun; Wrachtrup, Joerg

2018-05-01

A central goal in quantum optics and quantum information science is the development of quantum networks to generate entanglement between distributed quantum memories. Experimental progress relies on the quality and efficiency of the light-matter quantum interface connecting the quantum states of photons to internal states of quantum emitters. Quantum emitters in solids, which have properties resembling those of atoms and ions, offer an opportunity for realizing light-matter quantum interfaces in scalable and compact hardware. These quantum emitters require a material platform that enables stable spin and optical properties, as well as a robust manufacturing of quantum photonic circuits. Because no emitter system is yet perfect and different applications may require different properties, several light-matter quantum interfaces are being developed in various platforms. This Review highlights the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors.

Si-based optical I/O for optical memory interface

NASA Astrophysics Data System (ADS)

Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

2012-01-01

Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

ICOM2012: 3rd International Conference on the Physics of Optical Materials and Devices (Belgrade, Serbia, 2-6 September 2012)

NASA Astrophysics Data System (ADS)

Dramićanin, Miroslav D.; Antić, Željka; Viana, Bruno

2013-11-01

The 3rd International Conference on the Physics of Optical Materials and Devices (ICOM2012) was held in Belgrade (Serbia) from 2 to 6 September 2012 (figure 1). The conference was organized by the Vinča Institute of Nuclear Sciences, University of Belgrade (Serbia) and the Laboratoire de Chimie de la Matière Condensée de Paris (France), and supported by the Ministry of Education, Science and Technological Development of the Republic of Serbia and Optical Society of America. ICOM2012 was a follow-up to the two previous, successful ICOM conferences held in Herceg Novi in 2006 and 2009. The conference aimed at providing a forum for scientists in optical materials to debate on: • Luminescent materials and nanomaterials • Hybrid optical materials (organic/inorganic) • Characterization techniques of optical materials • Luminescence mechanisms and energy transfers • Theory and modeling of optical processes • Ultrafast-laser processing of materials • Optical sensors • Medical imaging • Advanced optical materials in photovoltaics and biophotonics • Photothermal and photoacoustic spectroscopy and phenomena The conference stressed the value of a fundamental scientific understanding of optical materials. A particular accent was put on wide band-gap materials in crystalline, glass and nanocrystalline forms. The applications mainly involved lasers, scintillators and phosphors. Rare earth and transition metal ions introduced as dopants in various hosts were considered, and their impact on the optical properties were detailed in several presentations. This volume contains selected contributions of speakers and participants of the ICOM2012 conference. The conference provided a unique opportunity for about 200 scientists from 32 countries to discuss recent progress in the field of optical materials. During the three and half days, 21 invited talks and 52 contributed lectures were given, with a special event in memory of our dear colleague Professor Dr Tsoltan Basiev (Russia). In addition, 183 posters were presented and the two Young Scientist Awards were announced at the closing ceremony. Acknowledgments We thank all the authors for their valuable research contribution presented in this volume. We express our acknowledgements to all reviewers with a special thanks to Dr G Watt, then Publisher of the journal, for accepting the publication of these papers in a special issue of Physica Scripta . We wish to express our gratitude to the members of the ICOM scientific advisory committee and organizing committee for their excellent work and commitment for the success of ICOM2012.

Optical memories in digital computing

NASA Technical Reports Server (NTRS)

Alford, C. O.; Gaylord, T. K.

1979-01-01

High capacity optical memories with relatively-high data-transfer rate and multiport simultaneous access capability may serve as basis for new computer architectures. Several computer structures that might profitably use memories are: a) simultaneous record-access system, b) simultaneously-shared memory computer system, and c) parallel digital processing structure.

Direct Writing of Three-Dimensional Macroporous Photonic Crystals on Pressure-Responsive Shape Memory Polymers.

PubMed

Fang, Yin; Ni, Yongliang; Leo, Sin-Yen; Wang, Bingchen; Basile, Vito; Taylor, Curtis; Jiang, Peng

2015-10-28

Here we report a single-step direct writing technology for making three-dimensional (3D) macroporous photonic crystal patterns on a new type of pressure-responsive shape memory polymer (SMP). This approach integrates two disparate fields that do not typically intersect: the well-established templating nanofabrication and shape memory materials. Periodic arrays of polymer macropores templated from self-assembled colloidal crystals are squeezed into disordered arrays in an unusual shape memory "cold" programming process. The recovery of the original macroporous photonic crystal lattices can be triggered by direct writing at ambient conditions using both macroscopic and nanoscopic tools, like a pencil or a nanoindenter. Interestingly, this shape memory disorder-order transition is reversible and the photonic crystal patterns can be erased and regenerated hundreds of times, promising the making of reconfigurable/rewritable nanooptical devices. Quantitative insights into the shape memory recovery of collapsed macropores induced by the lateral shear stresses in direct writing are gained through fundamental investigations on important process parameters, including the tip material, the critical pressure and writing speed for triggering the recovery of the deformed macropores, and the minimal feature size that can be directly written on the SMP membranes. Besides straightforward applications in photonic crystal devices, these smart mechanochromic SMPs that are sensitive to various mechanical stresses could render important technological applications ranging from chromogenic stress and impact sensors to rewritable high-density optical data storage media.

Enhanced photomechanical response of a Ni-Ti shape memory alloy coated with polymer-based photothermal composites

NASA Astrophysics Data System (ADS)

Perez-Zúñiga, M. G.; Sánchez-Arévalo, F. M.; Hernández-Cordero, J.

2017-10-01

A simple way to enhance the activation of shape memory effects with light in a Ni-Ti alloy is demonstrated. Using polydimethylsiloxane-carbon nanopowder (PDMS+CNP) composites as coatings, the one-way shape memory effect (OWSME) of the alloy can be triggered using low power IR light from a laser diode. The PDMS+CNP coatings serve as photothermal materials capable to absorb light, and subsequently generate and dissipate heat in a highly efficient manner, thereby reducing the optical powers required for triggering the OWSME in the Ni-Ti alloy. Experimental results with a cantilever flexural test using both, bare Ni-Ti and coated samples, show that the PDMS+CNP coatings perform as thermal boosters, and therefore the temperatures required for phase transformation in the alloy can be readily obtained with low laser powers. It is also shown that the two-way shape memory effect (TWSME) can be set in the Ni-Ti alloy through cycling the TWSME by simply modulating the laser diode signal. This provides a simple means for training the material, yielding a light driven actuator capable to provide forces in the mN range. Hence, the use of photothermal coatings on Ni-Ti shape memory alloys may offer new possibilities for developing light-controlled smart actuators.

A fast low-power optical memory based on coupled micro-ring lasers

NASA Astrophysics Data System (ADS)

Hill, Martin T.; Dorren, Harmen J. S.; de Vries, Tjibbe; Leijtens, Xaveer J. M.; den Besten, Jan Hendrik; Smalbrugge, Barry; Oei, Yok-Siang; Binsma, Hans; Khoe, Giok-Djan; Smit, Meint K.

2004-11-01

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20ps with 5.5fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

Optical RAM-enabled cache memory and optical routing for chip multiprocessors: technologies and architectures

NASA Astrophysics Data System (ADS)

Pleros, Nikos; Maniotis, Pavlos; Alexoudi, Theonitsa; Fitsios, Dimitris; Vagionas, Christos; Papaioannou, Sotiris; Vyrsokinos, K.; Kanellos, George T.

2014-03-01

The processor-memory performance gap, commonly referred to as "Memory Wall" problem, owes to the speed mismatch between processor and electronic RAM clock frequencies, forcing current Chip Multiprocessor (CMP) configurations to consume more than 50% of the chip real-estate for caching purposes. In this article, we present our recent work spanning from Si-based integrated optical RAM cell architectures up to complete optical cache memory architectures for Chip Multiprocessor configurations. Moreover, we discuss on e/o router subsystems with up to Tb/s routing capacity for cache interconnection purposes within CMP configurations, currently pursued within the FP7 PhoxTrot project.

A waveguide frequency converter connecting rubidium-based quantum memories to the telecom C-band.

PubMed

Albrecht, Boris; Farrera, Pau; Fernandez-Gonzalvo, Xavier; Cristiani, Matteo; de Riedmatten, Hugues

2014-02-27

Coherently converting the frequency and temporal waveform of single and entangled photons will be crucial to interconnect the various elements of future quantum information networks. Of particular importance is the quantum frequency conversion of photons emitted by material systems able to store quantum information, so-called quantum memories. There have been significant efforts to implement quantum frequency conversion using nonlinear crystals, with non-classical light from broadband photon-pair sources and solid-state emitters. However, solid state quantum frequency conversion has not yet been achieved with long-lived optical quantum memories. Here we demonstrate an ultra-low-noise solid state photonic quantum interface suitable for connecting quantum memories based on atomic ensembles to the telecommunication fibre network. The interface is based on an integrated-waveguide nonlinear device. We convert heralded single photons at 780 nm from a rubidium-based quantum memory to the telecommunication wavelength of 1,552 nm, showing significant non-classical correlations between the converted photon and the heralding signal.

Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyazono, Evan; Zhong, Tian; Craiciu, Ioana

Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials

DOE PAGES

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.; ...

2017-07-21

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials.

PubMed

Zhu, Zhihua; Evans, Philip G; Haglund, Richard F; Valentine, Jason G

2017-08-09

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated and local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.

Sb-Te Phase-change Materials under Nanoscale Confinement

NASA Astrophysics Data System (ADS)

Ihalawela, Chandrasiri A.

Size, speed and efficiency are the major challenges of next generation nonvolatile memory (NVM), and phase-change memory (PCM) has captured a great attention due to its promising features. The key for PCM is rapid and reversible switching between amorphous and crystalline phases with optical or electrical excitation. The structural transition is associated with significant contrast in material properties which can be utilized in optical (CD, DVD, BD) and electronic (PCRAM) memory applications. Importantly, both the functionality and the success of PCM technology significantly depend on the core material and its properties. So investigating PC materials is crucial for the development of PCM technology to realized enhanced solutions. In regards to PC materials, Sb-Te binary plays a significant role as a basis to the well-known Ge-Sb-Te system. Unlike the conventional deposition methods (sputtering, evaporation), electrochemical deposition method is used due to its multiple advantages, such as conformality, via filling capability, etc. First, the controllable synthesis of Sb-Te thin films was studied for a wide range of compositions using this novel deposition method. Secondly, the solid electrolytic nature of stoichiometric Sb2Te3 was studied with respect to precious metals. With the understanding of 2D thin film synthesis, Sb-Te 1D nanowires (18 - 220 nm) were synthesized using templated electrodeposition, where nanoporous anodic aluminum oxide (AAO) was used as a template for the growth of nanowires. In order to gain the controllability over the deposition in high aspect ratio structures, growth mechanisms of both the thin films and nanowires were investigated. Systematic understanding gained thorough previous studies helped to formulate the ultimate goal of this dissertation. In this dissertation, the main objective is to understand the size effect of PC materials on their phase transition properties. The reduction of effective memory cell size in conjunction with multilevel cells could be promising to achieve high data densities. However the size reduction may result in changes in material properties. If phase transition properties of the materials are also tunable with respect to the size, then more attractive solutions could be realized. So we have reported the size effect on crystallization temperature of prototypical Sb2Te3 nanowires synthesized in AAO templates. Moreover, we have found that the reduction of nanowire size can elevate the crystallization temperature, which is crucial for data retention in PCM technology. Energy dispersive X-ray spectroscopy, X-ray diffraction, electron microscopy and electrical resistivity measurements were used to characterize the composition, structure, morphology, and phase transition properties of the materials. We believe that this dissertation will provide new insights into the size effect of PC materials in addition to the controllable synthesis of PC thin films and nanowires through the novel electrochemical method.

Nanophotonic rare-earth quantum memory with optically controlled retrieval

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan M.; Bartholomew, John G.; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D.; Beyer, Andrew D.; Faraon, Andrei

2017-09-01

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes.

Design of all-optical memory cell using EIT and lasing without inversion phenomena in optical micro ring resonators

NASA Astrophysics Data System (ADS)

Pasyar, N.; Yadipour, R.; Baghban, H.

2017-07-01

The proposed design of the optical memory unit cell contains dual micro ring resonators in which the effect of lasing without inversion (LWI) in three-level nano particles doped over the optical resonators or integrators as the gain segment is used for loss compensation. Also, an on/off phase shifter based on electromagnetically induced transparency (EIT) in three-level quantum dots (QDs) has been used for data reading at requested time. Device minimizing for integrated purposes and high speed data storage are the main advantages of the optical integrator based memory.

Process-specific analysis in episodic memory retrieval using fast optical signals and hemodynamic signals in the right prefrontal cortex

NASA Astrophysics Data System (ADS)

Dong, Sunghee; Jeong, Jichai

2018-02-01

Objective. Memory is formed by the interaction of various brain functions at the item and task level. Revealing individual and combined effects of item- and task-related processes on retrieving episodic memory is an unsolved problem because of limitations in existing neuroimaging techniques. To investigate these issues, we analyze fast and slow optical signals measured from a custom-built continuous wave functional near-infrared spectroscopy (CW-fNIRS) system. Approach. In our work, we visually encode the words to the subjects and let them recall the words after a short rest. The hemodynamic responses evoked by the episodic memory are compared with those evoked by the semantic memory in retrieval blocks. In the fast optical signal, we compare the effects of old and new items (previously seen and not seen) to investigate the item-related process in episodic memory. The Kalman filter is simultaneously applied to slow and fast optical signals in different time windows. Main results. A significant task-related HbR decrease was observed in the episodic memory retrieval blocks. Mean amplitude and peak latency of a fast optical signal are dependent upon item types and reaction time, respectively. Moreover, task-related hemodynamic and item-related fast optical responses are correlated in the right prefrontal cortex. Significance. We demonstrate that episodic memory is retrieved from the right frontal area by a functional connectivity between the maintained mental state through retrieval and item-related transient activity. To the best of our knowledge, this demonstration of functional NIRS research is the first to examine the relationship between item- and task-related memory processes in the prefrontal area using single modality.

Process-specific analysis in episodic memory retrieval using fast optical signals and hemodynamic signals in the right prefrontal cortex.

PubMed

Dong, Sunghee; Jeong, Jichai

2018-02-01

Memory is formed by the interaction of various brain functions at the item and task level. Revealing individual and combined effects of item- and task-related processes on retrieving episodic memory is an unsolved problem because of limitations in existing neuroimaging techniques. To investigate these issues, we analyze fast and slow optical signals measured from a custom-built continuous wave functional near-infrared spectroscopy (CW-fNIRS) system. In our work, we visually encode the words to the subjects and let them recall the words after a short rest. The hemodynamic responses evoked by the episodic memory are compared with those evoked by the semantic memory in retrieval blocks. In the fast optical signal, we compare the effects of old and new items (previously seen and not seen) to investigate the item-related process in episodic memory. The Kalman filter is simultaneously applied to slow and fast optical signals in different time windows. A significant task-related HbR decrease was observed in the episodic memory retrieval blocks. Mean amplitude and peak latency of a fast optical signal are dependent upon item types and reaction time, respectively. Moreover, task-related hemodynamic and item-related fast optical responses are correlated in the right prefrontal cortex. We demonstrate that episodic memory is retrieved from the right frontal area by a functional connectivity between the maintained mental state through retrieval and item-related transient activity. To the best of our knowledge, this demonstration of functional NIRS research is the first to examine the relationship between item- and task-related memory processes in the prefrontal area using single modality.

The potential of multi-port optical memories in digital computing

NASA Technical Reports Server (NTRS)

Alford, C. O.; Gaylord, T. K.

1975-01-01

A high-capacity memory with a relatively high data transfer rate and multi-port simultaneous access capability may serve as the basis for new computer architectures. The implementation of a multi-port optical memory is discussed. Several computer structures are presented that might profitably use such a memory. These structures include (1) a simultaneous record access system, (2) a simultaneously shared memory computer system, and (3) a parallel digital processing structure.

High speed optical object recognition processor with massive holographic memory

NASA Technical Reports Server (NTRS)

Chao, T.; Zhou, H.; Reyes, G.

2002-01-01

Real-time object recognition using a compact grayscale optical correlator will be introduced. A holographic memory module for storing a large bank of optimum correlation filters, to accommodate the large data throughput rate needed for many real-world applications, has also been developed. System architecture of the optical processor and the holographic memory will be presented. Application examples of this object recognition technology will also be demonstrated.

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures

PubMed Central

Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo

2018-01-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS2/PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 104 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS2 to PbS. The demonstrated MoS2 heterostructure–based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices. PMID:29770356

Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.

PubMed

Wang, Qisheng; Wen, Yao; Cai, Kaiming; Cheng, Ruiqing; Yin, Lei; Zhang, Yu; Li, Jie; Wang, Zhenxing; Wang, Feng; Wang, Fengmei; Shifa, Tofik Ahmed; Jiang, Chao; Yang, Hyunsoo; He, Jun

2018-04-01

Optoelectronic devices for information storage and processing are at the heart of optical communication technology due to their significant applications in optical recording and computing. The infrared radiations of 850, 1310, and 1550 nm with low energy dissipation in optical fibers are typical optical communication wavebands. However, optoelectronic devices that could convert and store the infrared data into electrical signals, thereby enabling optical data communications, have not yet been realized. We report an infrared memory device using MoS 2 /PbS van der Waals heterostructures, in which the infrared pulse intrigues a persistent resistance state that hardly relaxes within our experimental time scales (more than 10 4 s). The device fully retrieves the memory state even after powering off for 3 hours, indicating its potential for nonvolatile storage devices. Furthermore, the device presents a reconfigurable switch of 2000 stable cycles. Supported by a theoretical model with quantitative analysis, we propose that the optical memory and the electrical erasing phenomenon, respectively, originate from the localization of infrared-induced holes in PbS and gate voltage pulse-enhanced tunneling of electrons from MoS 2 to PbS. The demonstrated MoS 2 heterostructure-based memory devices open up an exciting field for optoelectronic infrared memory and programmable logic devices.

Garnet Random-Access Memory

NASA Technical Reports Server (NTRS)

Katti, Romney R.

1995-01-01

Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.

Investigation of the development of optically controlled memory elements on the basis of multilayer semiconductor-dielectric structures

NASA Astrophysics Data System (ADS)

Plotnikov, A. F.; Seleznev, V. N.

The possibility of reverse optical recording in MNOS structures of Me-Si3N4-SiO2-Si type is investigated. Charge-transfer processes in traps under the effect of electric pulses are examined, and attention is given to the application of laser switching and photoelectric reading techniques to such structures. The principal energetic and temporal characteristics of such optical memories are examined, and the organization of a high-capacity (greater than 100-million bits) optical memory is discussed.

Reducing noise in a Raman quantum memory.

PubMed

Bustard, Philip J; England, Duncan G; Heshami, Khabat; Kupchak, Connor; Sussman, Benjamin J

2016-11-01

Optical quantum memories are an important component of future optical and hybrid quantum technologies. Raman schemes are strong candidates for use with ultrashort optical pulses due to their broad bandwidth; however, the elimination of deleterious four-wave mixing noise from Raman memories is critical for practical applications. Here, we demonstrate a quantum memory using the rotational states of hydrogen molecules at room temperature. Polarization selection rules prohibit four-wave mixing, allowing the storage and retrieval of attenuated coherent states with a mean photon number 0.9 and a pulse duration 175 fs. The 1/e memory lifetime is 85.5 ps, demonstrating a time-bandwidth product of ≈480 in a memory that is well suited for use with broadband heralded down-conversion and fiber-based photon sources.

Conductance Quantization in Resistive Random Access Memory

NASA Astrophysics Data System (ADS)

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

2015-10-01

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

Conductance Quantization in Resistive Random Access Memory.

PubMed

Li, Yang; Long, Shibing; Liu, Yang; Hu, Chen; Teng, Jiao; Liu, Qi; Lv, Hangbing; Suñé, Jordi; Liu, Ming

2015-12-01

The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.

Quantum memories: emerging applications and recent advances

NASA Astrophysics Data System (ADS)

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-11-01

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances.

PubMed

Heshami, Khabat; England, Duncan G; Humphreys, Peter C; Bustard, Philip J; Acosta, Victor M; Nunn, Joshua; Sussman, Benjamin J

2016-11-12

Quantum light-matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories.

Quantum memories: emerging applications and recent advances

PubMed Central

Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

2016-01-01

Quantum light–matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories. PMID:27695198

Multimodal properties and dynamics of gradient echo quantum memory.

PubMed

Hétet, G; Longdell, J J; Sellars, M J; Lam, P K; Buchler, B C

2008-11-14

We investigate the properties of a recently proposed gradient echo memory (GEM) scheme for information mapping between optical and atomic systems. We show that GEM can be described by the dynamic formation of polaritons in k space. This picture highlights the flexibility and robustness with regards to the external control of the storage process. Our results also show that, as GEM is a frequency-encoding memory, it can accurately preserve the shape of signals that have large time-bandwidth products, even at moderate optical depths. At higher optical depths, we show that GEM is a high fidelity multimode quantum memory.

A state-of-the-art assessment of active structures

NASA Technical Reports Server (NTRS)

1992-01-01

A state-of-the-art assessment of active structures with emphasis towards the applications in aeronautics and space is presented. It is felt that since this technology area is growing at such a rapid pace in many different disciplines, it is not feasible to cover all of the current research but only the relevant work as relates to aeronautics and space. Research in smart actuation materials, smart sensors, and control of smart/intelligent structures is covered. In smart actuation materials, piezoelectric, magnetostrictive, shape memory, electrorheological, and electrostrictive materials are covered. For sensory materials, fiber optics, dielectric loss, and piezoelectric sensors are examined. Applications of embedded sensors and smart sensors are discussed.

Characterization of the hyperfine interaction of the excited D50 state of Eu3 +:Y2SiO5

NASA Astrophysics Data System (ADS)

Cruzeiro, Emmanuel Zambrini; Etesse, Jean; Tiranov, Alexey; Bourdel, Pierre-Antoine; Fröwis, Florian; Goldner, Philippe; Gisin, Nicolas; Afzelius, Mikael

2018-03-01

We characterize the europium (Eu3 +) hyperfine interaction of the excited state (D50) and determine its effective spin Hamiltonian parameters for the Zeeman and quadrupole tensors. An optical free induction decay method is used to measure all hyperfine splittings under a weak external magnetic field (up to 10 mT) for various field orientations. On the basis of the determined Hamiltonian, we discuss the possibility to predict optical transition probabilities between hyperfine levels for the F70⟷D50 transition. The obtained results provide necessary information to realize an optical quantum memory scheme which utilizes long spin coherence properties of 3 + 151Eu :Y2SiO5 material under external magnetic fields.

Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing.

PubMed

Kuzum, Duygu; Jeyasingh, Rakesh G D; Lee, Byoungil; Wong, H-S Philip

2012-05-09

Brain-inspired computing is an emerging field, which aims to extend the capabilities of information technology beyond digital logic. A compact nanoscale device, emulating biological synapses, is needed as the building block for brain-like computational systems. Here, we report a new nanoscale electronic synapse based on technologically mature phase change materials employed in optical data storage and nonvolatile memory applications. We utilize continuous resistance transitions in phase change materials to mimic the analog nature of biological synapses, enabling the implementation of a synaptic learning rule. We demonstrate different forms of spike-timing-dependent plasticity using the same nanoscale synapse with picojoule level energy consumption.

Lattice Vibrations Boost Demagnetization Entropy in Shape Memory Alloy

DOE PAGES

Stonaha, Paul J.; Manley, Michael E.; Bruno, Nick; ...

2015-10-07

Magnetocaloric (MC) materials present an avenue for chemical-free, solid state refrigeration through cooling via adiabatic demagnetization. We have used inelastic neutron scattering to measure the lattice dynamics in the MC material Ni 45Co 5Mn 36.6In 13.4. Upon heating across TC, the material exhibits an anomalous increase in phonon entropy of 0.17 0.04 k_B/atom, which is nine times larger than expected from conventional thermal expansion. We find that the phonon softening is focused in a transverse optic phonon, and we present the results of first-principle calculations which predict a strong coupling between lattice distortions and magnetic excitations.

Quantum storage of heralded polarization qubits in birefringent and anisotropically absorbing materials.

PubMed

Clausen, Christoph; Bussières, Félix; Afzelius, Mikael; Gisin, Nicolas

2012-05-11

Storage of quantum information encoded into heralded single photons is an essential constituent of long-distance quantum communication based on quantum repeaters and of optical quantum information processing. The storage of photonic polarization qubits is, however, difficult because many materials are birefringent and have polarization-dependent absorption. Here we present a simple scheme that eliminates these polarization effects, and we demonstrate it by storing heralded polarization qubits into a solid-state quantum memory. The quantum memory is implemented with a biaxial yttrium orthosilicate (Y2SiO5) crystal doped with rare-earth ions. Heralded single photons generated from a filtered spontaneous parametric down-conversion source are stored, and quantum state tomography of the retrieved polarization state reveals an average fidelity of 97.5±0.4%, which is significantly higher than what is achievable with a measure-and-prepare strategy.

Unconditional room-temperature quantum memory

NASA Astrophysics Data System (ADS)

Hosseini, M.; Campbell, G.; Sparkes, B. M.; Lam, P. K.; Buchler, B. C.

2011-10-01

Just as classical information systems require buffers and memory, the same is true for quantum information systems. The potential that optical quantum information processing holds for revolutionizing computation and communication is therefore driving significant research into developing optical quantum memory. A practical optical quantum memory must be able to store and recall quantum states on demand with high efficiency and low noise. Ideally, the platform for the memory would also be simple and inexpensive. Here, we present a complete tomographic reconstruction of quantum states that have been stored in the ground states of rubidium in a vapour cell operating at around 80°C. Without conditional measurements, we show recall fidelity up to 98% for coherent pulses containing around one photon. To unambiguously verify that our memory beats the quantum no-cloning limit we employ state-independent verification using conditional variance and signal-transfer coefficients.

All-optical clocked delay flip-flop using a single terahertz optical asymmetric demultiplexer-based switch: a theoretical study.

PubMed

Chattopadhyay, Tanay

2010-10-01

A flip-flop (FF) is a kind of latch and the simplest form of memory device, which stores various values either temporarily or permanently. Optical FF memories form a fundamental building block for all-optical packet switches in next-generation communication networks. An all-optical clocked delay FF using a single terahertz optical asymmetric demultiplexer-based interferometric switch is proposed and described. Numerical simulation results are also reported.

Silicon-based all-optical memory elements for 1.54 μm photonics

NASA Astrophysics Data System (ADS)

Forcales, M.; Gregorkiewicz, T.; Zavada, J. M.

2003-01-01

We present experimental evidence of an optical memory effect in crystalline silicon doped with Er 3+ ions. It is observed at low temperature using two-color experiments in the visible and the mid-infrared (with a free-electron laser). Based on the physical mechanism governing the effect, possibilities for improvement of thermal stability and increase of archival time are discussed. An all-optical all-silicon memory element for use in photonic circuits is proposed.

Testing system for ferromagnetic shape memory microactuators.

PubMed

Ganor, Y; Shilo, D; Messier, J; Shield, T W; James, R D

2007-07-01

Ferromagnetic shape memory alloys are a class of smart materials that exhibit a unique combination of large strains and fast response when exposed to magnetic field. Accordingly, these materials have significant potential in motion generation applications such as microactuators and sensors. This article presents a novel experimental system that measures the dynamic magnetomechanical behavior of microscale ferromagnetic shape memory specimens. The system is comprised of an alternating magnetic field generator (AMFG) and a mechanical loading and sensing system. The AMFG generates a dynamic magnetic field that periodically alternates between two orthogonal directions to facilitate martensitic variant switching and to remotely achieve a full magnetic actuation cycle, without the need of mechanical resetting mechanisms. Moreover, the AMFG is designed to produce a magnetic field that inhibits 180 degrees magnetization domain switching, which causes energy loss without strain generation. The mechanical loading and sensing system maintains a constant mechanical load on the measured specimen by means of a cantilever beam, while the displacement is optically monitored with a resolution of approximately 0.1 microm. Preliminary measurements using Ni(2)MnGa single crystal specimens, with a cross section of 100x100 microm(2), verified their large actuation strains and established their potential to become a material of great importance in microactuation technology.

Optically Addressable, Ferroelectric Memory With NDRO

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1994-01-01

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Device applications and structural and optical properties of Indigo - A biodegradable, low-cost organic semiconductor

NASA Astrophysics Data System (ADS)

Wang, Zhengjun; Pisane, Kelly L.; Sierros, Konstantinos; Seehra, Mohindar S.; Korakakis, Dimitris

2015-03-01

Currently, memory devices based on organic materials are attracting great attention due to their simplicity in device structure, mechanical flexibility, potential for scalability, low-cost potential, low-power operation, and large capacity for data storage. In a recent paper from our group, Indigo-based nonvolatile organic write-once-read-many-times (WORM) memory device, consisting of a 100nm layer of indigo sandwiched between an indium tin oxide (ITO) cathode and an Al anode, has been reported. This device is found to be at its low resistance state (ON state) and can be switched to high resistance state (OFF state) by applying a positive bias with ON/OFF current ratio of the device being up to 1.02 × e6. A summary of these results along with the structural and optical properties of indigo powder will be reported. Analysis of x-ray diffraction shows a monoclinic structure with lattice parameters a(b)[c] = 0.924(0.577)[0.1222]nm and β =117° . Optical absorption shows a band edge at 1.70 eV with peak of absorption occurring at 1.90 eV. These results will be interpreted in terms of the HOMO-LUMO bands of Indigo.

Mirror-symmetric magneto-optical Kerr rotation using visible light in [(GeTe)2(Sb2Te3)1]n topological superlattices.

PubMed

Bang, Do; Awano, Hiroyuki; Tominaga, Junji; Kolobov, Alexander V; Fons, Paul; Saito, Yuta; Makino, Kotaro; Nakano, Takashi; Hase, Muneaki; Takagaki, Yukihiko; Giussani, Alessandro; Calarco, Raffaella; Murakami, Shuichi

2014-07-17

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications.

Optoelectronic and all-optical multiple memory states in vanadium dioxide

NASA Astrophysics Data System (ADS)

Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E.

2010-12-01

Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were maintained—by heat sinking—at a selected temperature within the heating branch of the hysteresis loops for resistance and near-infrared transmittance, while brief thermal excursions of the VO2 film were caused by either voltage pulses applied to the film or laser light pulses irradiating the film. These pulses had durations from milliseconds to a few seconds and the resulting drops in resistance or transmittance were easily and repeatably measurable without appreciably affecting their new values. A sequence of equal-duration pulses (for either equal-voltage or equal-irradiation pulses) caused the resistance and infrared transmittance to continue to drop, each time by a smaller amount, and larger energy pulses were required in order to cause drops comparable with the initial one. The ability of the film to change the values of the measurands in this manner with additional pulses was maintained up to a limit defined by the outer hysteresis curve for the measurand in question. The results presented show that a plurality of memory "states" in VO2 can be established or "written" either by voltage pulses or by light pulses applied to the material, and queried or "read" by resistance or transmittance readings, or both. These states were found to remain stable for at least several hours, as long as temperature was kept constant, and are expected to persist indefinitely under this condition. In the all-optical case, if the same light beam is used for writing and reading the memory state, the device is an optical analog of a memristor.

Spatial gradient tuning in metamaterials

NASA Astrophysics Data System (ADS)

Driscoll, Tom; Goldflam, Michael; Jokerst, Nan; Basov, Dimitri; Smith, David

2011-03-01

Gradient Index (GRIN) metamaterials have been used to create devices inspired by, but often surpassing the potential of, conventional GRIN optics. The unit-cell nature of metamaterials presents the opportunity to exert much greater control over spatial gradients than is possible in natural materials. This is true not only during the design phase but also offers the potential for real-time reconfiguration of the metamaterial gradient. This ability fits nicely into the picture of transformation-optics, in which spatial gradients can enable an impressive suite of innovative devices. We discuss methods to exert control over metamaterial response, focusing on our recent demonstrations using Vanadium Dioxide. We give special attention to role of memristance and mem-capacitance observed in Vanadium Dioxide, which simplify the demands of stimuli and addressing, as well as intersecting metamaterials with the field of memory-materials.

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

PubMed

Kim, Kang Lib; Lee, Wonho; Hwang, Sun Kak; Joo, Se Hun; Cho, Suk Man; Song, Giyoung; Cho, Sung Hwan; Jeong, Beomjin; Hwang, Ihn; Ahn, Jong-Hyun; Yu, Young-Jun; Shin, Tae Joo; Kwak, Sang Kyu; Kang, Seok Ju; Park, Cheolmin

2016-01-13

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Active and passive interaction mechanism of smart materials for health monitoring of engineering structures: a review

NASA Astrophysics Data System (ADS)

Annamdas, Venu Gopal Madhav; Annamdas, Kiran Kumar

2009-03-01

Smart materials when interact with engineering structures, should have the capability to sense, measure, process, and detect any change in the selected variables (stress, damage) at critical locations. These smart materials can be classified into active and passive depending on the type of the structure, variables to be monitored, and interaction mechanism due to surface bonding or embedment. Some of the prominent smart materials are piezoelectric materials, micro fiber composite, polymers, shape memory alloys, electrostrictive and magnetostrictive materials, electrorheological and magnetorheological fluids and fiber optics. In addition, host structures do have the properties to support or repel the usage of smart materials inside or on it. This paper presents some of the most widely used smart materials and their interaction mechanism for structural health monitoring of engineering structures.

Influence of the set-up on the recording of diffractive optical elements into photopolymers

NASA Astrophysics Data System (ADS)

Gallego, S.; Fernández, R.; Márquez, A.; Neipp, C.; Beléndez, A.; Pascual, I.

2014-05-01

Photopolymers are often used as a base of holographic memories displays. Recently the capacity of photopolymers to record diffractive optical elements (DOE's) has been demonstrated. To fabricate diffractive optical elements we use a hybrid setup that is composed by three different parts: LCD, optical system and the recording material. The DOE pattern is introduced by a liquid crystal display (LCD) working in the amplitude only mode to work as a master to project optically the DOE onto the recording material. The main advantage of this display is that permit us modify the DOE automatically, we use the electronics of the video projector to send the voltage to the pixels of the LCD. The LCD is used in the amplitude-mostly modulation regime by proper orientation of the external polarizers (P); then the pattern is imaged onto the material with an increased spatial frequency (a demagnifying factor of 2) by the optical system. The use of the LCD allows us to change DOE recorded in the photopolymer without moving any mechanical part of the set-up. A diaphragm is placed in the focal plane of the relay lens so as to eliminate the diffraction orders produced by the pixelation of the LCD. It can be expected that the final pattern imaged onto the recording material will be low filtered due to the finite aperture of the imaging system and especially due to the filtering process produced by the diaphragm. In this work we analyze the effect of the visibility achieved with the LCD and the high frequency cut-off due to the diaphragm in the final DOE recorded into the photopolymer. To simulate the recording we have used the fitted values parameters obtained for PVA/AA based photopolymers and the 3 dimensional models presented in previous works.

Research on Optical Transmitter and Receiver Module Used for High-Speed Interconnection between CPU and Memory

NASA Astrophysics Data System (ADS)

He, Huimin; Liu, Fengman; Li, Baoxia; Xue, Haiyun; Wang, Haidong; Qiu, Delong; Zhou, Yunyan; Cao, Liqiang

2016-11-01

With the development of the multicore processor, the bandwidth and capacity of the memory, rather than the memory area, are the key factors in server performance. At present, however, the new architectures, such as fully buffered DIMM (FBDIMM), hybrid memory cube (HMC), and high bandwidth memory (HBM), cannot be commercially applied in the server. Therefore, a new architecture for the server is proposed. CPU and memory are separated onto different boards, and optical interconnection is used for the communication between them. Each optical module corresponds to each dual inline memory module (DIMM) with 64 channels. Compared to the previous technology, not only can the architecture realize high-capacity and wide-bandwidth memory, it also can reduce power consumption and cost, and be compatible with the existing dynamic random access memory (DRAM). In this article, the proposed module with system-in-package (SiP) integration is demonstrated. In the optical module, the silicon photonic chip is included, which is a promising technology to be applied in the next-generation data exchanging centers. And due to the bandwidth-distance performance of the optical interconnection, SerDes chips are introduced to convert the 64-bit data at 800 Mbps from/to 4-channel data at 12.8 Gbps after/before they are transmitted though optical fiber. All the devices are packaged on cheap organic substrates. To ensure the performance of the whole system, several optimization efforts have been performed on the two modules. High-speed interconnection traces have been designed and simulated with electromagnetic simulation software. Steady-state thermal characteristics of the transceiver module have been evaluated by ANSYS APLD based on finite-element methodology (FEM). Heat sinks are placed at the hotspot area to ensure the reliability of all working chips. Finally, this transceiver system based on silicon photonics is measured, and the eye diagrams of data and clock signals are verified.

Auto and hetero-associative memory using a 2-D optical logic gate

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin (Inventor)

1992-01-01

An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.

Optical interconnection network for parallel access to multi-rank memory in future computing systems.

PubMed

Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

2015-08-10

With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent.

Setting a disordered password on a photonic memory

NASA Astrophysics Data System (ADS)

Su, Shih-Wei; Gou, Shih-Chuan; Chew, Lock Yue; Chang, Yu-Yen; Yu, Ite A.; Kalachev, Alexey; Liao, Wen-Te

2017-06-01

An all-optical method of setting a disordered password on different schemes of photonic memory is theoretically studied. While photons are regarded as ideal information carriers, it is imperative to implement such data protection on all-optical storage. However, we wish to address the intrinsic risk of data breaches in existing schemes of photonic memory. We theoretically demonstrate a protocol using spatially disordered laser fields to encrypt data stored on an optical memory, namely, encrypted photonic memory. To address the broadband storage, we also investigate a scheme of disordered echo memory with a high fidelity approaching unity. The proposed method increases the difficulty for the eavesdropper to retrieve the stored photon without the preset password even when the randomized and stored photon state is nearly perfectly cloned. Our results pave ways to significantly reduce the exposure of memories, required for long-distance communication, to eavesdropping and therefore restrict the optimal attack on communication protocols. The present scheme also increases the sensitivity of detecting any eavesdropper and so raises the security level of photonic information technology.

Photonic band gap materials: towards an all-optical transistor

NASA Astrophysics Data System (ADS)

Florescu, Marian

2002-05-01

The transmission of information as optical signals encoded on light waves traveling through optical fibers and optical networks is increasingly moving to shorter and shorter distance scales. In the near future, optical networking is poised to supersede conventional transmission over electric wires and electronic networks for computer-to-computer communications, chip-to-chip communications, and even on-chip communications. The ever-increasing demand for faster and more reliable devices to process the optical signals offers new opportunities in developing all-optical signal processing systems (systems in which one optical signal controls another, thereby adding "intelligence" to the optical networks). All-optical switches, two-state and many-state all-optical memories, all-optical limiters, all-optical discriminators and all-optical transistors are only a few of the many devices proposed during the last two decades. The "all-optical" label is commonly used to distinguish the devices that do not involve dissipative electronic transport and require essentially no electrical communication of information. The all-optical transistor action was first observed in the context of optical bistability [1] and consists in a strong differential gain regime, in which, for small variations in the input intensity, the output intensity has a very strong variation. This analog operation is for all-optical input what transistor action is for electrical inputs.

Monolayer optical memory cells based on artificial trap-mediated charge storage and release

NASA Astrophysics Data System (ADS)

Lee, Juwon; Pak, Sangyeon; Lee, Young-Woo; Cho, Yuljae; Hong, John; Giraud, Paul; Shin, Hyeon Suk; Morris, Stephen M.; Sohn, Jung Inn; Cha, Seungnam; Kim, Jong Min

2017-03-01

Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ~4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.

Multi-port, optically addressed RAM

NASA Technical Reports Server (NTRS)

Johnston, Alan R. (Inventor); Nixon, Robert H. (Inventor); Bergman, Larry A. (Inventor); Esener, Sadik (Inventor)

1989-01-01

A random access memory addressing system utilizing optical links between memory and the read/write logic circuits comprises addressing circuits including a plurality of light signal sources, a plurality of optical gates including optical detectors associated with the memory cells, and a holographic optical element adapted to reflect and direct the light signals to the desired memory cell locations. More particularly, it is a multi-port, binary computer memory for interfacing with a plurality of computers. There are a plurality of storage cells for containing bits of binary information, the storage cells being disposed at the intersections of a plurality of row conductors and a plurality of column conductors. There is interfacing logic for receiving information from the computers directing access to ones of the storage cells. There are first light sources associated with the interfacing logic for transmitting a first light beam with the access information modulated thereon. First light detectors are associated with the storage cells for receiving the first light beam, for generating an electrical signal containing the access information, and for conducting the electrical signal to the one of the storage cells to which it is directed. There are holographic optical elements for reflecting the first light beam from the first light sources to the first light detectors.

Light storage in a cold atomic ensemble with a high optical depth

NASA Astrophysics Data System (ADS)

Park, Kwang-Kyoon; Chough, Young-Tak; Kim, Yoon-Ho

2017-06-01

A quantum memory with a high storage efficiency and a long coherence time is an essential element in quantum information applications. Here, we report our recent development of an optical quantum memory with a rubidium-87 cold atom ensemble. By increasing the optical depth of the medium, we have achieved a storage efficiency of 65% and a coherence time of 51 μs for a weak laser pulse. The result of a numerical analysis based on the Maxwell-Bloch equations agrees well with the experimental results. Our result paves the way toward an efficient optical quantum memory and may find applications in photonic quantum information processing.

Precision spectral manipulation of optical pulses using a coherent photon echo memory.

PubMed

Buchler, B C; Hosseini, M; Hétet, G; Sparkes, B M; Lam, P K

2010-04-01

Photon echo schemes are excellent candidates for high efficiency coherent optical memory. They are capable of high-bandwidth multipulse storage, pulse resequencing and have been shown theoretically to be compatible with quantum information applications. One particular photon echo scheme is the gradient echo memory (GEM). In this system, an atomic frequency gradient is induced in the direction of light propagation leading to a Fourier decomposition of the optical spectrum along the length of the storage medium. This Fourier encoding allows precision spectral manipulation of the stored light. In this Letter, we show frequency shifting, spectral compression, spectral splitting, and fine dispersion control of optical pulses using GEM.

Optical Associative Memory Model With Threshold Modification Using Complementary Vector

NASA Astrophysics Data System (ADS)

Bian, Shaoping; Xu, Kebin; Hong, Jing

1989-02-01

A new criterion to evaluate the similarity between two vectors in associative memory is presented. According to it, an experimental research about optical associative memory model with threshold modification using complementary vector is carried out. This model is capable of eliminating the posibility to recall erroneously. Therefore the accuracy of reading out is improved.

Shape memory system with integrated actuation using embedded particles

DOEpatents

Buckley, Patrick R [New York, NY; Maitland, Duncan J [Pleasant Hill, CA

2009-09-22

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

Shape memory system with integrated actuation using embedded particles

DOEpatents

Buckley, Patrick R [New York, NY; Maitland, Duncan J [Pleasant Hill, CA

2012-05-29

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

Shape memory system with integrated actuation using embedded particles

DOEpatents

Buckley, Patrick R.; Maitland, Duncan J.

2014-04-01

A shape memory material with integrated actuation using embedded particles. One embodiment provides a shape memory material apparatus comprising a shape memory material body and magnetic pieces in the shape memory material body. Another embodiment provides a method of actuating a device to perform an activity on a subject comprising the steps of positioning a shape memory material body in a desired position with regard to the subject, the shape memory material body capable of being formed in a specific primary shape, reformed into a secondary stable shape, and controllably actuated to recover the specific primary shape; including pieces in the shape memory material body; and actuating the shape memory material body using the pieces causing the shape memory material body to be controllably actuated to recover the specific primary shape and perform the activity on the subject.

Coherent optical pulse sequencer for quantum applications.

PubMed

Hosseini, Mahdi; Sparkes, Ben M; Hétet, Gabriel; Longdell, Jevon J; Lam, Ping Koy; Buchler, Ben C

2009-09-10

The bandwidth and versatility of optical devices have revolutionized information technology systems and communication networks. Precise and arbitrary control of an optical field that preserves optical coherence is an important requisite for many proposed photonic technologies. For quantum information applications, a device that allows storage and on-demand retrieval of arbitrary quantum states of light would form an ideal quantum optical memory. Recently, significant progress has been made in implementing atomic quantum memories using electromagnetically induced transparency, photon echo spectroscopy, off-resonance Raman spectroscopy and other atom-light interaction processes. Single-photon and bright-optical-field storage with quantum states have both been successfully demonstrated. Here we present a coherent optical memory based on photon echoes induced through controlled reversible inhomogeneous broadening. Our scheme allows storage of multiple pulses of light within a chosen frequency bandwidth, and stored pulses can be recalled in arbitrary order with any chosen delay between each recalled pulse. Furthermore, pulses can be time-compressed, time-stretched or split into multiple smaller pulses and recalled in several pieces at chosen times. Although our experimental results are so far limited to classical light pulses, our technique should enable the construction of an optical random-access memory for time-bin quantum information, and have potential applications in quantum information processing.

Lattice vibrations boost demagnetization entropy in a shape-memory alloy

NASA Astrophysics Data System (ADS)

Stonaha, P. J.; Manley, M. E.; Bruno, N. M.; Karaman, I.; Arroyave, R.; Singh, N.; Abernathy, D. L.; Chi, S.

2015-10-01

Magnetocaloric (MC) materials present an avenue for chemical-free, solid-state refrigeration through cooling via adiabatic demagnetization. We have used inelastic neutron scattering to measure the lattice dynamics in the MC material N i45C o5M n36.6I n13.4 . Upon heating across the Curie temperature (TC) , the material exhibits an anomalous increase in phonon entropy of 0.22 ±0.04 kB/atom , which is ten times larger than expected from conventional thermal expansion. This transition is accompanied by an abrupt softening of the transverse optic phonon. We present first-principles calculations showing a strong coupling between lattice distortions and magnetic excitations.

A light writable microfluidic "flash memory": optically addressed actuator array with latched operation for microfluidic applications.

PubMed

Hua, Zhishan; Pal, Rohit; Srivannavit, Onnop; Burns, Mark A; Gulari, Erdogan

2008-03-01

This paper presents a novel optically addressed microactuator array (microfluidic "flash memory") with latched operation. Analogous to the address-data bus mediated memory address protocol in electronics, the microactuator array consists of individual phase-change based actuators addressed by localized heating through focused light patterns (address bus), which can be provided by a modified projector or high power laser pointer. A common pressure manifold (data bus) for the entire array is used to generate large deflections of the phase change actuators in the molten phase. The use of phase change material as the working media enables latched operation of the actuator array. After the initial light "writing" during which the phase is temporarily changed to molten, the actuated status is self-maintained by the solid phase of the actuator without power and pressure inputs. The microfluidic flash memory can be re-configured by a new light illumination pattern and common pressure signal. The proposed approach can achieve actuation of arbitrary units in a large-scale array without the need for complex external equipment such as solenoid valves and electrical modules, which leads to significantly simplified system implementation and compact system size. The proposed work therefore provides a flexible, energy-efficient, and low cost multiplexing solution for microfluidic applications based on physical displacements. As an example, the use of the latched microactuator array as "normally closed" or "normally open" microvalves is demonstrated. The phase-change wax is fully encapsulated and thus immune from contamination issues in fluidic environments.

Nanophotonic rare-earth quantum memory with optically controlled retrieval.

PubMed

Zhong, Tian; Kindem, Jonathan M; Bartholomew, John G; Rochman, Jake; Craiciu, Ioana; Miyazono, Evan; Bettinelli, Marco; Cavalli, Enrico; Verma, Varun; Nam, Sae Woo; Marsili, Francesco; Shaw, Matthew D; Beyer, Andrew D; Faraon, Andrei

2017-09-29

Optical quantum memories are essential elements in quantum networks for long-distance distribution of quantum entanglement. Scalable development of quantum network nodes requires on-chip qubit storage functionality with control of the readout time. We demonstrate a high-fidelity nanophotonic quantum memory based on a mesoscopic neodymium ensemble coupled to a photonic crystal cavity. The nanocavity enables >95% spin polarization for efficient initialization of the atomic frequency comb memory and time bin-selective readout through an enhanced optical Stark shift of the comb frequencies. Our solid-state memory is integrable with other chip-scale photon source and detector devices for multiplexed quantum and classical information processing at the network nodes. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues.

PubMed

Wu, Menghao; Zeng, Xiao Cheng

2016-05-11

Phosphorene and phosphorene analogues such as SnS and SnSe monolayers are promising nanoelectronic materials with desired bandgap, high carrier mobility, and anisotropic structures. Here, we show first-principles calculation evidence that these monolayers are potentially the long-sought two-dimensional (2D) materials that can combine electronic transistor characteristic with nonvolatile memory readable/writeable capability at ambient condition. Specifically, phosphorene is predicted to be a 2D intrinsic ferroelastic material with ultrahigh reversible strain, whereas SnS, SnSe, GeS, and GeSe monolayers are multiferroic with coupled ferroelectricity and ferroelasticity. Moreover, their low-switching barriers render room-temperature nonvolatile memory accessible, and their notable structural anisotropy enables ferroelastic or ferroelectric switching readily readable via electrical, thermal, optical, mechanical, or even spintronic detection upon the swapping of the zigzag and armchair direction. In addition, it is predicted that the GeS and GeSe monolayers as well as bulk SnS and SnSe can maintain their ferroelasticity and ferroelectricity (anti-ferroelectricity) beyond the room temperature, suggesting high potential for practical device application.

Temperature-driven topological quantum phase transitions in a phase-change material Ge2Sb2Te5.

PubMed

Eremeev, S V; Rusinov, I P; Echenique, P M; Chulkov, E V

2016-12-13

The Ge 2 Sb 2 Te 5 is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its electronic structure is currently not fully understood. The present work sheds new light on the electronic structure of the Ge 2 Sb 2 Te 5 crystalline phases. We demonstrate by predicting from first-principles calculations that stable crystal structures of Ge 2 Sb 2 Te 5 possess different topological quantum phases: a topological insulator phase is realized in low-temperature structure and Weyl semimetal phase is a characteristic of the high-temperature structure. Since the structural phase transitions are caused by the temperature the switching between different topologically non-trivial phases can be driven by variation of the temperature. The obtained results reveal the rich physics of the Ge 2 Sb 2 Te 5 compound and open previously unexplored possibility for spintronics applications of this material, substantially expanding its application potential.

Coherent Spin Control at the Quantum Level in an Ensemble-Based Optical Memory.

PubMed

Jobez, Pierre; Laplane, Cyril; Timoney, Nuala; Gisin, Nicolas; Ferrier, Alban; Goldner, Philippe; Afzelius, Mikael

2015-06-12

Long-lived quantum memories are essential components of a long-standing goal of remote distribution of entanglement in quantum networks. These can be realized by storing the quantum states of light as single-spin excitations in atomic ensembles. However, spin states are often subjected to different dephasing processes that limit the storage time, which in principle could be overcome using spin-echo techniques. Theoretical studies suggest this to be challenging due to unavoidable spontaneous emission noise in ensemble-based quantum memories. Here, we demonstrate spin-echo manipulation of a mean spin excitation of 1 in a large solid-state ensemble, generated through storage of a weak optical pulse. After a storage time of about 1 ms we optically read-out the spin excitation with a high signal-to-noise ratio. Our results pave the way for long-duration optical quantum storage using spin-echo techniques for any ensemble-based memory.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Novel Plasmonic Materials and Nanodevices for Integrated Quantum Photonics

NASA Astrophysics Data System (ADS)

Shalaginov, Mikhail Y.

Light-matter interaction is the foundation for numerous important quantum optical phenomena, which may be harnessed to build practical devices with higher efficiency and unprecedented functionality. Nanoscale engineering is seen as a fruitful avenue to significantly strengthen light-matter interaction and also make quantum optical systems ultra-compact, scalable, and energy efficient. This research focuses on color centers in diamond that share quantum properties with single atoms. These systems promise a path for the realization of practical quantum devices such as nanoscale sensors, single-photon sources, and quantum memories. In particular, we explored an intriguing methodology of utilizing nanophotonic structures, such as hyperbolic metamaterials, nanoantennae, and plasmonic waveguides, to improve the color centers performance. We observed enhancement in the color center's spontaneous emission rate, emission directionality, and cooperativity over a broad optical frequency range. Additionally, we studied the effect of plasmonic environments on the spin-readout sensitivity of color centers. The use of CMOS-compatible epitaxially grown plasmonic materials in the design of these nanophotonic structures promises a new level of performance for a variety of integrated room-temperature quantum devices based on diamond color centers.

Storage of RF photons in minimal conditions

NASA Astrophysics Data System (ADS)

Cromières, J.-P.; Chanelière, T.

2018-02-01

We investigate the minimal conditions to store coherently a RF pulse in a material medium. We choose a commercial quartz as a memory support because it is a widely available component with a high Q-factor. Pulse storage is obtained by varying dynamically the light-matter coupling with an analog switch. This parametric driving of the quartz dynamics can be alternatively interpreted as a stopped-light experiment. We obtain an efficiency of 26%, a storage time of 209 μs and a time-to-bandwidth product of 98 by optimizing the pulse temporal shape. The coherent character of the storage is demonstrated. Our goal is to connect different types of memories in the RF and optical domain for quantum information processing. Our motivation is essentially fundamental.

Electrically driven hybrid photonic metamaterials for multifunctional control

NASA Astrophysics Data System (ADS)

Kang, Lei; Liu, Liu; Campbell, Sawyer D.; Yue, Taiwei; Ren, Qiang; Mayer, Theresa S.; Werner, Douglas H.

2017-08-01

The unique light-matter interaction in metamaterials, a type of artificial medium in which the geometrical features of subunits dominate their optical responses, have been utilized to achieve exotic material properties that are rare or nonexistent in natural materials. Furthermore, to extend their behaviors, active materials have been introduced into metamaterial systems to advance tunability, switchability and nonlinearity. Nevertheless, practical examples of versatile photonic metamaterials remain exceedingly rare for two main reasons. On the one hand, in sharp contrast to the broad material options available at lower frequencies, it is less common to find active media in the optical regime that can provide pronounced dielectric property changes under external stimuli, such as electric and magnetic fields. Vanadium dioxide (VO2), offering a large refractive index variation over a broad frequency range due to its near room temperature insulator-to-metal transition (IMT), has been favored in recent studies on tunable metamaterials. On the other hand, it turns out that regulating responses of hybrid metamaterials to external forces in an integrated manner is not a straightforward task. Recently, metamaterial-enabled devices (i.e., metadevices) with `self-sufficient' or `self-contained' electrical and optical properties have enabled complex functionalities. Here, we present a design methodology along with the associated experimental validation of a VO2 thin film integrated optical metamaterial absorber as a hybrid photonic platform for electrically driven multifunctional control, including reflectance switching, a rewritable memory process and manageable localized camouflage. The nanoengineered topologically continuous metal structure simultaneously supports the optical resonance and electrical functionality that actuates the phase transition in VO2 through the process of Joule heating. This work provides a universal approach to creating self-sufficient and highly-versatile nanophotonic systems.

Multiple layer optical memory system using second-harmonic-generation readout

DOEpatents

Boyd, Gary T.; Shen, Yuen-Ron

1989-01-01

A novel optical read and write information storage system is described which comprises a radiation source such as a laser for writing and illumination, the radiation source being capable of radiating a preselected first frequency; a storage medium including at least one layer of material for receiving radiation from the radiation source and capable of being surface modified in response to said radiation source when operated in a writing mode and capable of generating a pattern of radiation of the second harmonic of the preselected frequency when illuminated by the radiation source at the preselected frequency corresponding to the surface modifications on the storage medium; and a detector to receive the pattern of second harmonic frequency generated.

Development of a Meso-Scale Fiberoptic Rotation Sensor for a Torsion Actuator.

PubMed

Sheng, Jun; Desai, Jaydev P

2018-01-01

This paper presents the development of a meso-scale fiberoptic rotation sensor for a shape memory alloy (SMA) torsion actuator for neurosurgical applications. Within the sensor, a rotary head with a reflecting surface is capable of modulating the light intensity collected by optical fibers when the rotary head is coupled to the torsion actuator. The mechanism of light intensity modulation is modeled, followed by experimental model verification. Meanwhile, working performances for different rotary head designs, optical fibers, and fabrication materials are compared. After the calibration of the fiberoptic rotation sensor, the sensor is capable of precisely measuring rotary motion and controlling the SMA torsion actuator with feedback control.

Quantum memory with optically trapped atoms.

PubMed

Chuu, Chih-Sung; Strassel, Thorsten; Zhao, Bo; Koch, Markus; Chen, Yu-Ao; Chen, Shuai; Yuan, Zhen-Sheng; Schmiedmayer, Jörg; Pan, Jian-Wei

2008-09-19

We report the experimental demonstration of quantum memory for collective atomic states in a far-detuned optical dipole trap. Generation of the collective atomic state is heralded by the detection of a Raman scattered photon and accompanied by storage in the ensemble of atoms. The optical dipole trap provides confinement for the atoms during the quantum storage while retaining the atomic coherence. We probe the quantum storage by cross correlation of the photon pair arising from the Raman scattering and the retrieval of the atomic state stored in the memory. Nonclassical correlations are observed for storage times up to 60 mus.

Use of biphase-coded pulses for wideband data storage in time-domain optical memories.

PubMed

Shen, X A; Kachru, R

1993-06-10

We demonstrate that temporally long laser pulses with appropriate phase modulation can replace either temporally brief or frequency-chirped pulses in a time-domain optical memory to store and retrieve information. A 1.65-µs-long write pulse was biphase modulated according to the 13-bit Barker code for storing multiple bits of optical data into a Pr(3+):YAlO(3) crystal, and the stored information was later recalled faithfully by using a read pulse that was identical to the write pulse. Our results further show that the stored data cannot be retrieved faithfully if mismatched write and read pulses are used. This finding opens up the possibility of designing encrypted optical memories for secure data storage.

Regenerative memory in time-delayed neuromorphic photonic resonators

NASA Astrophysics Data System (ADS)

Romeira, B.; Avó, R.; Figueiredo, José M. L.; Barland, S.; Javaloyes, J.

2016-01-01

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Far-IR transparency and dynamic infrared signature control with novel conducting polymer systems

NASA Astrophysics Data System (ADS)

Chandrasekhar, Prasanna; Dooley, T. J.

1995-09-01

Materials which possess transparency, coupled with active controllability of this transparency in the infrared (IR), are today an increasingly important requirement, for varied applications. These applications include windows for IR sensors, IR-region flat panel displays used in camouflage as well as in communication and sight through night-vision goggles, coatings with dynamically controllable IR-emissivity, and thermal conservation coatings. Among stringent requirements for these applications are large dynamic ranges (color contrast), 'multi-color' or broad-band characteristics, extended cyclability, long memory retention, matrix addressability, small area fabricability, low power consumption, and environmental stability. Among materials possessing the requirements for variation of IR signature, conducting polymers (CPs) appear to be the only materials with dynamic, actively controllable signature and acceptable dynamic range. Conventional CPs such as poly(alkyl thiophene), poly(pyrrole) or poly(aniline) show very limited dynamic range, especially in the far-IR, while also showing poor transparency. We have developed a number of novel CP systems ('system' implying the CP, the selected dopant, the synthesis method, and the electrolyte) with very wide dynamic range (up to 90% in both important IR regions, 3 - 5 (mu) and 8 - 12 (mu) ), high cyclability (to 105 cycles with less than 10% optical degradation), nearly indefinite optical memory retention, matrix addressability of multi-pixel displays, very wide operating temperature and excellent environmental stability, low charge capacity, and processability into areas from less than 1 mm2 to more than 100 cm2. The criteria used to design and arrive at these CP systems, together with representative IR signature data, are presented in this paper.

Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge2+xSb2Te5 (x = 0,1) thin films for phase-change memory

NASA Astrophysics Data System (ADS)

Cheng, Limin; Wu, Liangcai; Song, Zhitang; Rao, Feng; Peng, Cheng; Yao, Dongning; Liu, Bo; Xu, Ling

2013-01-01

The phase-change behavior and microstructure changes of N-doped Ge3Sb2Te5 [N-GST(3/2/5)] and Ge2Sb2Te5 [GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.

Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices

PubMed Central

Bang, Do; Awano, Hiroyuki; Tominaga, Junji; Kolobov, Alexander V.; Fons, Paul; Saito, Yuta; Makino, Kotaro; Nakano, Takashi; Hase, Muneaki; Takagaki, Yukihiko; Giussani, Alessandro; Calarco, Raffaella; Murakami, Shuichi

2014-01-01

Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications. PMID:25030304

Coherent spin control of a nanocavity-enhanced qubit in diamond

DOE PAGES

Li, Luozhou; Lu, Ming; Schroder, Tim; ...

2015-01-28

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy nanocavity systems in strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interfacemore » is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.« less

Nanomaterials for Electronics and Optoelectronics

NASA Technical Reports Server (NTRS)

Koehne, Jessica E.; Meyyappan, M.

2011-01-01

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Multiplexed Holographic Data Storage in Bacteriorhodopsin

NASA Technical Reports Server (NTRS)

Mehrl, David J.; Krile, Thomas F.

1997-01-01

High density optical data storage, driven by the information revolution, remains at the forefront of current research areas. Much of the current research has focused on photorefractive materials (SBN and LiNbO3) and polymers, despite various problems with expense, durability, response time and retention periods. Photon echo techniques, though promising, are questionable due to the need for cryogenic conditions. Bacteriorhodopsin (BR) films are an attractive alternative recording medium. Great strides have been made in refining BR, and materials with storage lifetimes as long as 100 days have recently become available. The ability to deposit this robust polycrystalline material as high quality optical films suggests the use of BR as a recording medium for commercial optical disks. Our own recent research has demonstrated the suitability of BR films for real time spatial filtering and holography. We propose to fully investigate the feasibility of performing holographic mass data storage in BR. Important aspects of the problem to be investigated include various data multiplexing techniques (e.g. angle- amplitude- and phase-encoded multiplexing, and in particular shift-multiplexing), multilayer recording techniques, SLM selection and data readout using crossed polarizers for noise rejection. Systems evaluations of storage parameters, including access times, memory refresh constraints, erasure, signal-to-noise ratios and bit error rates, will be included in our investigations.

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

NASA Astrophysics Data System (ADS)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge₂Sb₂Te₅.

PubMed

Skelton, J M; Elliott, S R

2013-05-22

Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge-Sb-Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge2Sb2Te5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge2Sb2Te5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials.

Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akimov, Denis A; Zheltikov, Aleksei M; Koroteev, Nikolai I

1998-06-30

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samplesmore » of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix. (laser applications and other topics in quantum electronics)« less

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Data reading with the aid of one-photon and two-photon luminescence in three-dimensional optical memory devices based on photochromic materials

NASA Astrophysics Data System (ADS)

Akimov, Denis A.; Zheltikov, Aleksei M.; Koroteev, Nikolai I.; Magnitskiy, Sergey A.; Naumov, A. N.; Sidorov-Biryukov, D. A.; Sokolyuk, N. T.; Fedotov, Andrei B.

1998-06-01

The problem of nondestructive reading of the data stored in the interior of a photochromic sample was analysed. A comparison was made of the feasibility of reading based on one-photon and two-photon luminescence. A model was proposed for the processes of reading the data stored in photochromic molecules with the aid of one-photon and two-photon luminescence. In addition to photochromic transitions, account was taken of the transfer of populations between optically coupled transitions in molecules under the action of the exciting radiation. This model provided a satisfactory description of the kinetics of decay of the coloured form of bulk samples of spiropyran and made it possible to determine experimentally the quantum yield of the reverse photoreaction as well as the two-photon absorption cross section of the coloured form. Measurements were made of the characteristic erasure times of the data stored in a photochromic medium under one-photon and two-photon luminescence reading conditions. It was found that the use of two-photon luminescence made it possible to enhance considerably the contrast and localisation of the optical data reading scheme in three-dimensional optical memory devices. The experimental results were used to estimate the two-photon absorption cross section of the coloured form of a sample of indoline spiropyran in a polymethyl methacrylate matrix.

Optical character recognition with feature extraction and associative memory matrix

NASA Astrophysics Data System (ADS)

Sasaki, Osami; Shibahara, Akihito; Suzuki, Takamasa

1998-06-01

A method is proposed in which handwritten characters are recognized using feature extraction and an associative memory matrix. In feature extraction, simple processes such as shifting and superimposing patterns are executed. A memory matrix is generated with singular value decomposition and by modifying small singular values. The method is optically implemented with two liquid crystal displays. Experimental results for the recognition of 25 handwritten alphabet characters clearly shows the effectiveness of the method.

Thermal and Optical Modulation of the Carrier Mobility in OTFTs Based on an Azo-anthracene Liquid Crystal Organic Semiconductor.

PubMed

Chen, Yantong; Li, Chao; Xu, Xiuru; Liu, Ming; He, Yaowu; Murtaza, Imran; Zhang, Dongwei; Yao, Chao; Wang, Yongfeng; Meng, Hong

2017-03-01

One of the most striking features of organic semiconductors compared with their corresponding inorganic counterparts is their molecular diversity. The major challenge in organic semiconductor material technology is creating molecular structural motifs to develop multifunctional materials in order to achieve the desired functionalities yet to optimize the specific device performance. Azo-compounds, because of their special photoresponsive property, have attracted extensive interest in photonic and optoelectronic applications; if incorporated wisely in the organic semiconductor groups, they can be innovatively utilized in advanced smart electronic applications, where thermal and photo modulation is applied to tune the electronic properties. On the basis of this aspiration, a novel azo-functionalized liquid crystal semiconductor material, (E)-1-(4-(anthracen-2-yl)phenyl)-2-(4-(decyloxy)phenyl)diazene (APDPD), is designed and synthesized for application in organic thin-film transistors (OTFTs). The UV-vis spectra of APDPD exhibit reversible photoisomerizaton upon photoexcitation, and the thin films of APDPD show a long-range orientational order based on its liquid crystal phase. The performance of OTFTs based on this material as well as the effects of thermal treatment and UV-irradiation on mobility are investigated. The molecular structure, stability of the material, and morphology of the thin films are characterized by thermal gravimetric analysis (TGA), polarizing optical microscopy (POM), (differential scanning calorimetry (DSC), UV-vis spectroscopy, atomic force microscopy (AFM), and scanning tunneling microscopy (STM). This study reveals that our new material has the potential to be applied in optical sensors, memories, logic circuits, and functional switches.

Active photo-thermal self-healing of shape memory polyurethanes

NASA Astrophysics Data System (ADS)

Kazemi-Lari, Mohammad A.; Malakooti, Mohammad H.; Sodano, Henry A.

2017-05-01

Structural health monitoring (SHM) has received significant interest over the past decade and has led to the development of a wide variety of sensors and signal processing techniques to determine the presence of changes or damage in a structural system. The topic has attracted significant attention due to the safety and performance enhancing benefits as well as the potential lifesaving capabilities offered by the technology. While the resulting systems are capable of sensing their surrounding structural and environmental conditions, few methods exist for using the information to autonomously react and repair or protect the system. One of the major challenges in the future implementation of SHM systems is their coupling with materials that can react to the damage to heal themselves and return to normal function. The coupling of self-healing materials with SHM has the potential to significantly prolong the lifetime of structural systems and extend the required inspection intervals. In the present study, an optical fiber based self-healing system composed of mendable polyurethanes based on the thermally reversible Diels-Alder (DA) reaction is developed. Inspired by health monitoring techniques, active photo-thermal sensing and actuation is achieved using infrared laser light passing through an optical fiber and a thermal power sensor to detect the presence of cracking in the structure. Healing is triggered as the crack propagates through the polymer and fractures the embedded optical fiber. Through a feedback loop, the detected power drop by the sensor is utilized as a signal to heat the cracked area and stimulate the shape memory effect of the polyurethane and the retro-DA reaction. The healing performance results indicate that this novel integrated system can be effectively employed to monitor the incidence of damage and actively heal a crack in the polymer.

Optical storage with electromagnetically induced transparency in cold atoms at a high optical depth

NASA Astrophysics Data System (ADS)

Zhang, Shanchao; Zhou, Shuyu; Liu, Chang; Chen, J. F.; Wen, Jianming; Loy, M. M. T.; Wong, G. K. L.; Du, Shengwang

2012-06-01

We report experimental demonstration of efficient optical storage with electromagnetically induced transparency (EIT) in a dense cold ^85Rb atomic ensemble trapped in a two-dimensional magneto-optical trap. By varying the optical depth (OD) from 0 to 140, we observe that the optimal storage efficiency for coherent optical pulses has a saturation value of 50% as OD > 50. Our result is consistent with that obtained from hot vapor cell experiments which suggest that a four-wave mixing nonlinear process degrades the EIT storage coherence and efficiency. We apply this EIT quantum memory for narrow-band single photons with controllable waveforms, and obtain an optimal storage efficiency of 49±3% for single-photon wave packets. This is the highest single-photon storage efficiency reported up to today and brings the EIT atomic quantum memory close to practical application because an efficiency of above 50% is necessary to operate the memory within non-cloning regime and beat the classical limit.

Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

NASA Astrophysics Data System (ADS)

Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

2014-05-01

Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also, multistability between several modal configurations has been shown to remain unavoidable.

Photonic and Opto-Electronic Applications of Polydiacetylene Films Photodeposited from Solution and Polydiacetylene Copolymer Networks

NASA Technical Reports Server (NTRS)

Paley, Mark S.; Frazier, Donald O.; Smith, David D.; Witherow, William K.; Addeldeyem, Hossin A.; Wolfe, Daniel B.

1998-01-01

Polydiacetylenes (PDAS) are attractive materials for both electronic and photonic applications because of their highly conjugated electronic structures. They have been investigated for applications as both one-dimensional (linear chain) conductors and nonlinear optical (NLO) materials. One of the chief limitations to the use of PDAs has been the inability to readily process them into useful forms such as films and fibers. In our laboratory we have developed a novel process for obtaining amorphous films of a PDA derived from 2-methyl4-nitroaniline using photodeposition with Ultraviolet (UV) light from monomer solutions onto transparent substrates. Photodeposition from solution provides a simple technique for obtaining PDA films in any desired pattern with good optical quality. This technique has been used to produce PDA films that show potential for optical applications such as holographic memory storage and optical limiting, as well as third-order NLO applications such as all-optical refractive index modulation, phase modulation and switching. Additionally, copolymerization of diacetylenes with other monomers such as methacrylates provides a means to obtain materials with good processibility. Such copolymers can be spin cast to form films, or drawn by either melt or solution extrusion into fibers. These films or fibers can then be irradiated with UV to photopolymerize the diacetylene units to form a highly stable cross-linked PDA-copolymer network. If such films are electrically poled while being irradiated, they can achieve the asymmetry necessary for second-order NLO applications such as electro-optic switching. On Earth, formation of PDAs by the above mentioned techniques suffers from defects and inhomogeneities caused by convective flows that can arise during processing. By studying the formation of these materials in the reduced-convection, diffusion-controlled environment of space we hope to better understand the factors that affect their processing, and thereby, their nature and properties. Ultimately it may even be feasible to conduct space processing of PDAs for technological applications.

Optoelectronic Terminal-Attractor-Based Associative Memory

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang; Barhen, Jacob; Farhat, Nabil H.

1994-01-01

Report presents theoretical and experimental study of optically and electronically addressable optical implementation of artificial neural network that performs associative recall. Shows by computer simulation that terminal-attractor-based associative memory can have perfect convergence in associative retrieval and increased storage capacity. Spurious states reduced by exploiting terminal attractors.

Samarium Monosulfide (SmS): Reviewing Properties and Applications

PubMed Central

Sousanis, Andreas

2017-01-01

In this review, we give an overview of the properties and applications of samarium monosulfide, SmS, which has gained considerable interest as a switchable material. It shows a pressure-induced phase transition from the semiconducting to the metallic state by polishing, and it switches back to the semiconducting state by heating. The material also shows a magnetic transition, from the paramagnetic state to an antiferromagnetically ordered state. The switching behavior between the semiconducting and metallic states could be exploited in several applications, such as high density optical storage and memory materials, thermovoltaic devices, infrared sensors and more. We discuss the electronic, optical and magnetic properties of SmS, its switching behavior, as well as the thin film deposition techniques which have been used, such as e-beam evaporation and sputtering. Moreover, applications and possible ideas for future work on this material are presented. Our scope is to present the properties of SmS, which were mainly measured in bulk crystals, while at the same time we describe the possible deposition methods that will push the study of SmS to nanoscale dimensions, opening an intriguing range of applications for low-dimensional, pressure-induced semiconductor–metal transition compounds. PMID:28813006

Manipulating femtosecond spin-orbit torques with laser pulse sequences to control magnetic memory states and ringing

NASA Astrophysics Data System (ADS)

Lingos, P. C.; Wang, J.; Perakis, I. E.

2015-05-01

Femtosecond (fs) coherent control of collective order parameters is important for nonequilibrium phase dynamics in correlated materials. Here, we propose such control of ferromagnetic order based on using nonadiabatic optical manipulation of electron-hole (e -h ) photoexcitations to create fs carrier-spin pulses with controllable direction and time profile. These spin pulses are generated due to the time-reversal symmetry breaking arising from nonperturbative spin-orbit and magnetic exchange couplings of coherent photocarriers. By tuning the nonthermal populations of exchange-split, spin-orbit-coupled semiconductor band states, we can excite fs spin-orbit torques that control complex magnetization pathways between multiple magnetic memory states. We calculate the laser-induced fs magnetic anisotropy in the time domain by using density matrix equations of motion rather than the quasiequilibrium free energy. By comparing to pump-probe experiments, we identify a "sudden" out-of-plane magnetization canting displaying fs magnetic hysteresis, which agrees with switchings measured by the static Hall magnetoresistivity. This fs transverse spin-canting switches direction with magnetic state and laser frequency, which distinguishes it from the longitudinal nonlinear optical and demagnetization effects. We propose that sequences of clockwise or counterclockwise fs spin-orbit torques, photoexcited by shaping two-color laser-pulse sequences analogous to multidimensional nuclear magnetic resonance (NMR) spectroscopy, can be used to timely suppress or enhance magnetic ringing and switching rotation in magnetic memories.

Biologically inspired autonomous structural materials with controlled toughening and healing

NASA Astrophysics Data System (ADS)

Garcia, Michael E.; Sodano, Henry A.

2010-04-01

The field of structural health monitoring (SHM) has made significant contributions in the field of prognosis and damage detection in the past decade. The advantageous use of this technology has not been integrated into operational structures to prevent damage from propagating or to heal injured regions under real time loading conditions. Rather, current systems relay this information to a central processor or human operator, who then determines a course of action such as altering the mission or scheduling repair maintenance. Biological systems exhibit advanced sensory and healing traits that can be applied to the design of material systems. For instance, bone is the major structural component in vertebrates; however, unlike modern structural materials, bone has many properties that make it effective for arresting the propagation of cracks and subsequent healing of the fractured area. The foremost goal for the development of future adaptive structures is to mimic biological systems, similar to bone, such that the material system can detect damage and deploy defensive traits to impede damage from propagating, thus preventing catastrophic failure while in operation. After sensing and stalling the propagation of damage, the structure must then be repaired autonomously using self healing mechanisms motivated by biological systems. Here a novel autonomous system is developed using shape memory polymers (SMPs), that employs an optical fiber network as both a damage detection sensor and a network to deliver stimulus to the damage site initiating adaptation and healing. In the presence of damage the fiber optic fractures allowing a high power laser diode to deposit a controlled level of thermal energy at the fractured sight locally reducing the modulus and blunting the crack tip, which significantly slows the crack growth rate. By applying a pre-induced strain field and utilizing the shape memory recovery effect, thermal energy can be deployed to close the crack and return the system to its original operating state. The entire system will effectively detect, self toughen, and subsequently heal damage as biological materials such as bone does.

Ultra-High-Density Ferroelectric Memories

NASA Technical Reports Server (NTRS)

Thakoor, Sarita

1995-01-01

Features include fast input and output via optical fibers. Memory devices of proposed type include thin ferroelectric films in which data stored in form of electric polarization. Assuming one datum stored in region as small as polarization domain, sizes of such domains impose upper limits on achievable storage densities. Limits approach 1 terabit/cm(Sup2) in all-optical versions of these ferroelectric memories and exceeds 1 gigabit/cm(Sup2) in optoelectronic versions. Memories expected to exhibit operational lives of about 10 years, input/output times of about 10 ns, and fatigue lives of about 10(Sup13) cycles.

Memory device using movement of protons

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

1998-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Memory device using movement of protons

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

2000-01-01

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

All-optical clocked flip-flops and random access memory cells using the nonlinear polarization rotation effect of low-polarization-dependent semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wang, Yongjun; Liu, Xinyu; Tian, Qinghua; Wang, Lina; Xin, Xiangjun

2018-03-01

Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.

Shift-invariant optical associative memories

NASA Astrophysics Data System (ADS)

Psaltis, Demetri; Hong, John

1987-01-01

Shift invariance in the context of associative memories is discussed. Two optical systems that exhibit shift invariance are described in detail with attention given to the analysis of storage capacities. It is shown that full shift invariance cannot be achieved with systems that employ only linear interconnections to store the associations.

Method for making field-structured memory materials

DOEpatents

Martin, James E.; Anderson, Robert A.; Tigges, Chris P.

2002-01-01

A method of forming a dual-level memory material using field structured materials. The field structured materials are formed from a dispersion of ferromagnetic particles in a polymerizable liquid medium, such as a urethane acrylate-based photopolymer, which are applied as a film to a support and then exposed in selected portions of the film to an applied magnetic or electric field. The field can be applied either uniaxially or biaxially at field strengths up to 150 G or higher to form the field structured materials. After polymerizing the field-structure materials, a magnetic field can be applied to selected portions of the polymerized field-structured material to yield a dual-level memory material on the support, wherein the dual-level memory material supports read-and-write binary data memory and write once, read many memory.

Photonic content-addressable memory system that uses a parallel-readout optical disk

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Ashok V.; Marchand, Philippe J.; Yayla, Gökçe; Esener, Sadik C.

1995-11-01

We describe a high-performance associative-memory system that can be implemented by means of an optical disk modified for parallel readout and a custom-designed silicon integrated circuit with parallel optical input. The system can achieve associative recall on 128 \\times 128 bit images and also on variable-size subimages. The system's behavior and performance are evaluated on the basis of experimental results on a motionless-head parallel-readout optical-disk system, logic simulations of the very-large-scale integrated chip, and a software emulation of the overall system.

In situ simultaneous strain and temperature measurement of adaptive composite materials using a fiber Bragg grating based sensor

NASA Astrophysics Data System (ADS)

Yoon, Hyuk-Jin; Costantini, Daniele M.; Michaud, Veronique; Limberger, Hans G.; Manson, Jan-Anders; Salathe, Rene P.; Kim, Chun-Gon; Hong, Chang-Sun

2005-05-01

An optical fiber sensor to simultaneously measure strain and temperature was designed and embedded into an adaptive composite laminate which exhibits a shape change upon thermal activation. The sensor is formed by two fiber Bragg gratings, which are written in optical fibers with different core dopants. The two gratings were spliced close to each other and a sensing element resulted with Bragg gratings of similar strain sensitivity but different response to temperature. This is due to the dependence of the fiber thermo-optic coefficient on core dopants and relative concentrations. The sensor was tested on an adaptive composite laminate made of unidirectional Kevlar-epoxy pre-preg plies. Several 150μm diameter pre-strained NiTiCu shape memory alloy wires were embedded in the composite laminate together with one fiber sensor. Simultaneous monitoring of strain and temperature during the curing process and activation in an oven was demonstrated.

Synchronized femtosecond laser pulse switching system based nano-patterning technology

NASA Astrophysics Data System (ADS)

Sohn, Ik-Bu; Choi, Hun-Kook; Yoo, Dongyoon; Noh, Young-Chul; Sung, Jae-Hee; Lee, Seong-Ku; Ahsan, Md. Shamim; Lee, Ho

2017-07-01

This paper demonstrates the design and development of a synchronized femtosecond laser pulse switching system and its applications in nano-patterning of transparent materials. Due to synchronization, we are able to control the location of each irradiated laser pulse in any kind of substrate. The control over the scanning speed and scanning step of the laser beam enables us to pattern periodic micro/nano-metric holes, voids, and/or lines in various materials. Using the synchronized laser system, we pattern synchronized nano-holes on the surface of and inside various transparent materials including fused silica glass and polymethyl methacrylate to replicate any image or pattern on the surface of or inside (transparent) materials. We also investigate the application areas of the proposed synchronized femtosecond laser pulse switching system in a diverse field of science and technology, especially in optical memory, color marking, and synchronized micro/nano-scale patterning of materials.

Fast, noise-free memory for photon synchronization at room temperature.

PubMed

Finkelstein, Ran; Poem, Eilon; Michel, Ohad; Lahad, Ohr; Firstenberg, Ofer

2018-01-01

Future quantum photonic networks require coherent optical memories for synchronizing quantum sources and gates of probabilistic nature. We demonstrate a fast ladder memory (FLAME) mapping the optical field onto the superposition between electronic orbitals of rubidium vapor. Using a ladder-level system of orbital transitions with nearly degenerate frequencies simultaneously enables high bandwidth, low noise, and long memory lifetime. We store and retrieve 1.7-ns-long pulses, containing 0.5 photons on average, and observe short-time external efficiency of 25%, memory lifetime (1/ e ) of 86 ns, and below 10 -4 added noise photons. Consequently, coupling this memory to a probabilistic source would enhance the on-demand photon generation probability by a factor of 12, the highest number yet reported for a noise-free, room temperature memory. This paves the way toward the controlled production of large quantum states of light from probabilistic photon sources.

Strain-Detecting Composite Materials

NASA Technical Reports Server (NTRS)

Wallace, Terryl A. (Inventor); Smith, Stephen W. (Inventor); Piascik, Robert S. (Inventor); Horne, Michael R. (Inventor); Messick, Peter L. (Inventor); Alexa, Joel A. (Inventor); Glaessgen, Edward H. (Inventor); Hailer, Benjamin T. (Inventor)

2016-01-01

A composite material includes a structural material and a shape-memory alloy embedded in the structural material. The shape-memory alloy changes crystallographic phase from austenite to martensite in response to a predefined critical macroscopic average strain of the composite material. In a second embodiment, the composite material includes a plurality of particles of a ferromagnetic shape-memory alloy embedded in the structural material. The ferromagnetic shape-memory alloy changes crystallographic phase from austenite to martensite and changes magnetic phase in response to the predefined critical macroscopic average strain of the composite material. A method of forming a composite material for sensing the predefined critical macroscopic average strain includes providing the shape-memory alloy having an austenite crystallographic phase, changing a size and shape of the shape-memory alloy to thereby form a plurality of particles, and combining the structural material and the particles at a temperature of from about 100-700.degree. C. to form the composite material.

Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

NASA Astrophysics Data System (ADS)

Rose, Brendon Charles

This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic temperature. Additionally, we observe that the optical emission is highly coherent, predominately into a narrow zero phonon line that is stable in frequency. The combination of coherent optical and spin degrees of freedom has eluded all previous solid state defects.

Functional carbon nitride materials — design strategies for electrochemical devices

NASA Astrophysics Data System (ADS)

Kessler, Fabian K.; Zheng, Yun; Schwarz, Dana; Merschjann, Christoph; Schnick, Wolfgang; Wang, Xinchen; Bojdys, Michael J.

2017-06-01

In the past decade, research in the field of artificial photosynthesis has shifted from simple, inorganic semiconductors to more abundant, polymeric materials. For example, polymeric carbon nitrides have emerged as promising materials for metal-free semiconductors and metal-free photocatalysts. Polymeric carbon nitride (melon) and related carbon nitride materials are desirable alternatives to industrially used catalysts because they are easily synthesized from abundant and inexpensive starting materials. Furthermore, these materials are chemically benign because they do not contain heavy metal ions, thereby facilitating handling and disposal. In this Review, we discuss the building blocks of carbon nitride materials and examine how strategies in synthesis, templating and post-processing translate from the molecular level to macroscopic properties, such as optical and electronic bandgap. Applications of carbon nitride materials in bulk heterojunctions, laser-patterned memory devices and energy storage devices indicate that photocatalytic overall water splitting on an industrial scale may be realized in the near future and reveal a new avenue of 'post-silicon electronics'.

Shape memory polymer medical device

DOEpatents

Maitland, Duncan [Pleasant Hill, CA; Benett, William J [Livermore, CA; Bearinger, Jane P [Livermore, CA; Wilson, Thomas S [San Leandro, CA; Small, IV, Ward; Schumann, Daniel L [Concord, CA; Jensen, Wayne A [Livermore, CA; Ortega, Jason M [Pacifica, CA; Marion, III, John E.; Loge, Jeffrey M [Stockton, CA

2010-06-29

A system for removing matter from a conduit. The system includes the steps of passing a transport vehicle and a shape memory polymer material through the conduit, transmitting energy to the shape memory polymer material for moving the shape memory polymer material from a first shape to a second and different shape, and withdrawing the transport vehicle and the shape memory polymer material through the conduit carrying the matter.

Faithful Solid State Optical Memory with Dynamically Decoupled Spin Wave Storage

NASA Astrophysics Data System (ADS)

Lovrić, Marko; Suter, Dieter; Ferrier, Alban; Goldner, Philippe

2013-07-01

We report a high fidelity optical memory in which dynamical decoupling is used to extend the storage time. This is demonstrated in a rare-earth doped crystal in which optical coherences were transferred to nuclear spin coherences and then protected against environmental noise by dynamical decoupling, leading to storage times of up to 4.2 ms. An interference experiment shows that relative phases of input pulses are preserved through the whole storage and retrieval process with a visibility ≈1, demonstrating the usefulness of dynamical decoupling for extending the storage time of quantum memories. We also show that dynamical decoupling sequences insensitive to initial spin coherence increase retrieval efficiency.

High efficiency Raman memory by suppressing radiation trapping

NASA Astrophysics Data System (ADS)

Thomas, S. E.; Munns, J. H. D.; Kaczmarek, K. T.; Qiu, C.; Brecht, B.; Feizpour, A.; Ledingham, P. M.; Walmsley, I. A.; Nunn, J.; Saunders, D. J.

2017-06-01

Raman interactions in alkali vapours are used in applications such as atomic clocks, optical signal processing, generation of squeezed light and Raman quantum memories for temporal multiplexing. To achieve a strong interaction the alkali ensemble needs both a large optical depth and a high level of spin-polarisation. We implement a technique known as quenching using a molecular buffer gas which allows near-perfect spin-polarisation of over 99.5 % in caesium vapour at high optical depths of up to ˜ 2× {10}5; a factor of 4 higher than can be achieved without quenching. We use this system to explore efficient light storage with high gain in a GHz bandwidth Raman memory.

Faithful solid state optical memory with dynamically decoupled spin wave storage.

PubMed

Lovrić, Marko; Suter, Dieter; Ferrier, Alban; Goldner, Philippe

2013-07-12

We report a high fidelity optical memory in which dynamical decoupling is used to extend the storage time. This is demonstrated in a rare-earth doped crystal in which optical coherences were transferred to nuclear spin coherences and then protected against environmental noise by dynamical decoupling, leading to storage times of up to 4.2 ms. An interference experiment shows that relative phases of input pulses are preserved through the whole storage and retrieval process with a visibility ≈1, demonstrating the usefulness of dynamical decoupling for extending the storage time of quantum memories. We also show that dynamical decoupling sequences insensitive to initial spin coherence increase retrieval efficiency.

Memory-guided reaching in a patient with visual hemiagnosia.

PubMed

Cornelsen, Sonja; Rennig, Johannes; Himmelbach, Marc

2016-06-01

The two-visual-systems hypothesis (TVSH) postulates that memory-guided movements rely on intact functions of the ventral stream. Its particular importance for memory-guided actions was initially inferred from behavioral dissociations in the well-known patient DF. Despite of rather accurate reaching and grasping movements to visible targets, she demonstrated grossly impaired memory-guided grasping as much as impaired memory-guided reaching. These dissociations were later complemented by apparently reversed dissociations in patients with dorsal damage and optic ataxia. However, grasping studies in DF and optic ataxia patients differed with respect to the retinotopic position of target objects, questioning the interpretation of the respective findings as a double dissociation. In contrast, the findings for reaching errors in both types of patients came from similar peripheral target presentations. However, new data on brain structural changes and visuomotor deficits in DF also questioned the validity of a double dissociation in reaching. A severe visuospatial short-term memory deficit in DF further questioned the specificity of her memory-guided reaching deficit. Therefore, we compared movement accuracy in visually-guided and memory-guided reaching in a new patient who suffered a confined unilateral damage to the ventral visual system due to stroke. Our results indeed support previous descriptions of memory-guided movements' inaccuracies in DF. Furthermore, our data suggest that recently discovered optic-ataxia like misreaching in DF is most likely caused by her parieto-occipital and not by her ventral stream damage. Finally, multiple visuospatial memory measurements in HWS suggest that inaccuracies in memory-guided reaching tasks in patients with ventral damage cannot be explained by visuospatial short-term memory or perceptual deficits, but by a specific deficit in visuomotor processing. Copyright © 2016 Elsevier Ltd. All rights reserved.

Quasi-light storage for optical data packets.

PubMed

Schneider, Thomas; Preußler, Stefan

2014-02-06

Today's telecommunication is based on optical packets which transmit the information in optical fiber networks around the world. Currently, the processing of the signals is done in the electrical domain. Direct storage in the optical domain would avoid the transfer of the packets to the electrical and back to the optical domain in every network node and, therefore, increase the speed and possibly reduce the energy consumption of telecommunications. However, light consists of photons which propagate with the speed of light in vacuum. Thus, the storage of light is a big challenge. There exist some methods to slow down the speed of the light, or to store it in excitations of a medium. However, these methods cannot be used for the storage of optical data packets used in telecommunications networks. Here we show how the time-frequency-coherence, which holds for every signal and therefore for optical packets as well, can be exploited to build an optical memory. We will review the background and show in detail and through examples, how a frequency comb can be used for the copying of an optical packet which enters the memory. One of these time domain copies is then extracted from the memory by a time domain switch. We will show this method for intensity as well as for phase modulated signals.

Holographic implementation of a binary associative memory for improved recognition

NASA Astrophysics Data System (ADS)

Bandyopadhyay, Somnath; Ghosh, Ajay; Datta, Asit K.

1998-03-01

Neural network associate memory has found wide application sin pattern recognition techniques. We propose an associative memory model for binary character recognition. The interconnection strengths of the memory are binary valued. The concept of sparse coding is sued to enhance the storage efficiency of the model. The question of imposed preconditioning of pattern vectors, which is inherent in a sparsely coded conventional memory, is eliminated by using a multistep correlation technique an the ability of correct association is enhanced in a real-time application. A potential optoelectronic implementation of the proposed associative memory is also described. The learning and recall is possible by using digital optical matrix-vector multiplication, where full use of parallelism and connectivity of optics is made. A hologram is used in the experiment as a longer memory (LTM) for storing all input information. The short-term memory or the interconnection weight matrix required during the recall process is configured by retrieving the necessary information from the holographic LTM.

High-speed noise-free optical quantum memory

NASA Astrophysics Data System (ADS)

Kaczmarek, K. T.; Ledingham, P. M.; Brecht, B.; Thomas, S. E.; Thekkadath, G. S.; Lazo-Arjona, O.; Munns, J. H. D.; Poem, E.; Feizpour, A.; Saunders, D. J.; Nunn, J.; Walmsley, I. A.

2018-04-01

Optical quantum memories are devices that store and recall quantum light and are vital to the realization of future photonic quantum networks. To date, much effort has been put into improving storage times and efficiencies of such devices to enable long-distance communications. However, less attention has been devoted to building quantum memories which add zero noise to the output. Even small additional noise can render the memory classical by destroying the fragile quantum signatures of the stored light. Therefore, noise performance is a critical parameter for all quantum memories. Here we introduce an intrinsically noise-free quantum memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We demonstrate successful storage of GHz-bandwidth heralded single photons in a warm atomic vapor with no added noise, confirmed by the unaltered photon-number statistics upon recall. Our ORCA memory meets the stringent noise requirements for quantum memories while combining high-speed and room-temperature operation with technical simplicity, and therefore is immediately applicable to low-latency quantum networks.

Parallel optical image addition and subtraction in a dynamic photorefractive memory by phase-code multiplexing

NASA Astrophysics Data System (ADS)

Denz, Cornelia; Dellwig, Thilo; Lembcke, Jan; Tschudi, Theo

1996-02-01

We propose and demonstrate experimentally a method for utilizing a dynamic phase-encoded photorefractive memory to realize parallel optical addition, subtraction, and inversion operations of stored images. The phase-encoded holographic memory is realized in photorefractive BaTiO3, storing eight images using WalshHadamard binary phase codes and an incremental recording procedure. By subsampling the set of reference beams during the recall operation, the selectivity of the phase address is decreased, allowing one to combine images in such a way that different linear combination of the images can be realized at the output of the memory.

Holographic memory for high-density data storage and high-speed pattern recognition

NASA Astrophysics Data System (ADS)

Gu, Claire

2002-09-01

As computers and the internet become faster and faster, more and more information is transmitted, received, and stored everyday. The demand for high density and fast access time data storage is pushing scientists and engineers to explore all possible approaches including magnetic, mechanical, optical, etc. Optical data storage has already demonstrated its potential in the competition against other storage technologies. CD and DVD are showing their advantages in the computer and entertainment market. What motivated the use of optical waves to store and access information is the same as the motivation for optical communication. Light or an optical wave has an enormous capacity (or bandwidth) to carry information because of its short wavelength and parallel nature. In optical storage, there are two types of mechanism, namely localized and holographic memories. What gives the holographic data storage an advantage over localized bit storage is the natural ability to read the stored information in parallel, therefore, meeting the demand for fast access. Another unique feature that makes the holographic data storage attractive is that it is capable of performing associative recall at an incomparable speed. Therefore, volume holographic memory is particularly suitable for high-density data storage and high-speed pattern recognition. In this paper, we review previous works on volume holographic memories and discuss the challenges for this technology to become a reality.

Integrated electrochromic aperture diaphragm

NASA Astrophysics Data System (ADS)

Deutschmann, T.; Oesterschulze, E.

2014-05-01

In the last years, the triumphal march of handheld electronics with integrated cameras has opened amazing fields for small high performing optical systems. For this purpose miniaturized iris apertures are of practical importance because they are essential to control both the dynamic range of the imaging system and the depth of focus. Therefore, we invented a micro optical iris based on an electrochromic (EC) material. This material changes its absorption in response to an applied voltage. A coaxial arrangement of annular rings of the EC material is used to establish an iris aperture without need of any mechanical moving parts. The advantages of this device do not only arise from the space-saving design with a thickness of the device layer of 50μm. But it also benefits from low power consumption. In fact, its transmission state is stable in an open circuit, phrased memory effect. Only changes of the absorption require a voltage of up to 2 V. In contrast to mechanical iris apertures the absorption may be controlled on an analog scale offering the opportunity for apodization. These properties make our device the ideal candidate for battery powered and space-saving systems. We present optical measurements concerning control of the transmitted intensity and depth of focus, and studies dealing with switching times, light scattering, and stability. While the EC polymer used in this study still has limitations concerning color and contrast, the presented device features all functions of an iris aperture. In contrast to conventional devices it offers some special features. Owing to the variable chemistry of the EC material, its spectral response may be adjusted to certain applications like color filtering in different spectral regimes (UV, optical range, infrared). Furthermore, all segments may be switched individually to establish functions like spatial Fourier filtering or lateral tunable intensity filters.

Synthesis and Screening of Phase Change Chalcogenide Thin Film Materials for Data Storage.

PubMed

Guerin, Samuel; Hayden, Brian; Hewak, Daniel W; Vian, Chris

2017-07-10

A combinatorial synthetic methodology based on evaporation sources under an ultrahigh vacuum has been used to directly synthesize compositional gradient thin film libraries of the amorphous phases of GeSbTe alloys at room temperature over a wide compositional range. An optical screen is described that allows rapid parallel mapping of the amorphous-to-crystalline phase transition temperature and optical contrast associated with the phase change on such libraries. The results are shown to be consistent with the literature for compositions where published data are available along the Sb 2 Te 3 -GeTe tie line. The results reveal a minimum in the crystallization temperature along the Sb 2 Te 3 -Ge 2 Te 3 tie line, and the method is able to resolve subsequent cubic-to-hexagonal phase transitions in the GST crystalline phase. HT-XRD has been used to map the phases at sequentially higher temperatures, and the results are reconciled with the literature and trends in crystallization temperatures. The results clearly delineate compositions that crystallize to pure GST phases and those that cocrystallize Te. High-throughput measurement of the resistivity of the amorphous and crystalline phases has allowed the compositional and structural correlation of the resistivity contrast associated with the amorphous-to-crystalline transition, which range from 5-to-8 orders of magnitude for the compositions investigated. The results are discussed in terms of the compromises in the selection of these materials for phase change memory applications and the potential for further exploration through more detailed secondary screening of doped GST or similar classes of phase change materials designed for the demands of future memory devices.

Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials.

PubMed

Skelton, Jonathan M; Loke, Desmond; Lee, Taehoon; Elliott, Stephen R

2015-07-08

We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-change material, Ge2Sb2Te5, using ab initio molecular-dynamics simulations. Stepwise changes in structural order in response to temperature pulses of varying length and duration are observed, and a good reproduction of the spike-timing-dependent plasticity observed in nanoelectronic synapses is demonstrated. Short above-melting pulses lead to instantaneous loss of structural and chemical order, followed by delayed partial recovery upon structural relaxation. We also investigate the link between structural order and electrical and optical properties. These results pave the way toward a first-principles understanding of phase-change physics beyond binary switching.

Neuromorphic Computing – From Materials Research to Systems Architecture Roundtable

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schuller, Ivan K.; Stevens, Rick; Pino, Robinson

2015-10-29

Computation in its many forms is the engine that fuels our modern civilization. Modern computation—based on the von Neumann architecture—has allowed, until now, the development of continuous improvements, as predicted by Moore’s law. However, computation using current architectures and materials will inevitably—within the next 10 years—reach a limit because of fundamental scientific reasons. DOE convened a roundtable of experts in neuromorphic computing systems, materials science, and computer science in Washington on October 29-30, 2015 to address the following basic questions: Can brain-like (“neuromorphic”) computing devices based on new material concepts and systems be developed to dramatically outperform conventional CMOS basedmore » technology? If so, what are the basic research challenges for materials sicence and computing? The overarching answer that emerged was: The development of novel functional materials and devices incorporated into unique architectures will allow a revolutionary technological leap toward the implementation of a fully “neuromorphic” computer. To address this challenge, the following issues were considered: The main differences between neuromorphic and conventional computing as related to: signaling models, timing/clock, non-volatile memory, architecture, fault tolerance, integrated memory and compute, noise tolerance, analog vs. digital, and in situ learning New neuromorphic architectures needed to: produce lower energy consumption, potential novel nanostructured materials, and enhanced computation Device and materials properties needed to implement functions such as: hysteresis, stability, and fault tolerance Comparisons of different implementations: spin torque, memristors, resistive switching, phase change, and optical schemes for enhanced breakthroughs in performance, cost, fault tolerance, and/or manufacturability.« less

Robotic Vision, Tray-Picking System Design Using Multiple, Optical Matched Filters

NASA Astrophysics Data System (ADS)

Leib, Kenneth G.; Mendelsohn, Jay C.; Grieve, Philip G.

1986-10-01

The optical correlator is applied to a robotic vision, tray-picking problem. Complex matched filters (MFs) are designed to provide sufficient optical memory for accepting any orientation of the desired part, and a multiple holographic lens (MHL) is used to increase the memory for continuous coverage. It is shown that with appropriate thresholding a small part can be selected using optical matched filters. A number of criteria are presented for optimizing the vision system. Two of the part-filled trays that Mendelsohn used are considered in this paper which is the analog (optical) expansion of his paper. Our view in this paper is that of the optical correlator as a cueing device for subsequent, finer vision techniques.

Semiconductor ring lasers coupled by a single waveguide

NASA Astrophysics Data System (ADS)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

All-optical switching for 10-Gb/s packet data by using an ultralow-power optical bistability of photonic-crystal nanocavities.

PubMed

Nozaki, Kengo; Lacraz, Amedee; Shinya, Akihiko; Matsuo, Shinji; Sato, Tomonari; Takeda, Koji; Kuramochi, Eiichi; Notomi, Masaya

2015-11-16

An all-optical packet switching using bistable photonic crystal nanocavity memories was demonstrated for the first time. Nanocavity-waveguide coupling systems were configured for 1 × 1, 1 × 2, and 1 × 3 switches for 10-Gb/s optical packet, and they were all operated with an optical bias power of only a few μW. The power is several magnitudes lower than that of previously reported all-optical packet switches incorporating all-optical memories. A theoretical investigation indicated the optimum design for reducing the power consumption even further, and for realizing a higher data-rate capability and higher extinction. A small footprint and integrability are also features of our switches, which make them attractive for constructing an all-optical packet switching subsystem with a view to realizing optical routing on a chip.

Coherent Optical Memory with High Storage Efficiency and Large Fractional Delay

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A.

2013-02-01

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory.

PubMed

Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

2015-07-13

The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance.

Coherent optical memory with high storage efficiency and large fractional delay.

PubMed

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite A

2013-02-22

A high-storage efficiency and long-lived quantum memory for photons is an essential component in long-distance quantum communication and optical quantum computation. Here, we report a 78% storage efficiency of light pulses in a cold atomic medium based on the effect of electromagnetically induced transparency. At 50% storage efficiency, we obtain a fractional delay of 74, which is the best up-to-date record. The classical fidelity of the recalled pulse is better than 90% and nearly independent of the storage time, as confirmed by the direct measurement of phase evolution of the output light pulse with a beat-note interferometer. Such excellent phase coherence between the stored and recalled light pulses suggests that the current result may be readily applied to single photon wave packets. Our work significantly advances the technology of electromagnetically induced transparency-based optical memory and may find practical applications in long-distance quantum communication and optical quantum computation.

Storage and retrieval of vector beams of light in a multiple-degree-of-freedom quantum memory

PubMed Central

Parigi, Valentina; D'Ambrosio, Vincenzo; Arnold, Christophe; Marrucci, Lorenzo; Sciarrino, Fabio; Laurat, Julien

2015-01-01

The full structuration of light in the transverse plane, including intensity, phase and polarization, holds the promise of unprecedented capabilities for applications in classical optics as well as in quantum optics and information sciences. Harnessing special topologies can lead to enhanced focusing, data multiplexing or advanced sensing and metrology. Here we experimentally demonstrate the storage of such spatio-polarization-patterned beams into an optical memory. A set of vectorial vortex modes is generated via liquid crystal cell with topological charge in the optic axis distribution, and preservation of the phase and polarization singularities is demonstrated after retrieval, at the single-photon level. The realized multiple-degree-of-freedom memory can find applications in classical data processing but also in quantum network scenarios where structured states have been shown to provide promising attributes, such as rotational invariance. PMID:26166257

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Circulatory fibre-optic memory loop with a built-in service channel

NASA Astrophysics Data System (ADS)

Pilipovich, V. A.; Esman, A. K.; Goncharenko, I. A.; Posed'ko, V. S.; Solonovich, I. F.

1995-10-01

A method for increasing the information capacity and enhancing the reliability of information storage in a dynamic fibre-optic memory is proposed. An additional built-in channel with counterpropagating circulation of signals is provided for this purpose. This additional channel can be used to transmit both information and service signals, such as address words, clock signals, correcting sequences, etc. The possibility of compensating the attenuation of an information signal by stimulated Raman scattering is considered.

Fidelity of an optical memory based on stimulated photon echoes.

PubMed

Staudt, M U; Hastings-Simon, S R; Nilsson, M; Afzelius, M; Scarani, V; Ricken, R; Suche, H; Sohler, W; Tittel, W; Gisin, N

2007-03-16

We investigated the preservation of information encoded into the relative phase and amplitudes of optical pulses during storage and retrieval in an optical memory based on stimulated photon echo. By interfering photon echoes produced in a single-mode Ti:Er:LiNbO(3) waveguide, we found that decoherence in the medium translates only as loss and not as degradation of information. We measured a visibility for interfering echoes close to 100%. These results may have important implications for future long-distance quantum communication protocols.

Shape Memory Alloy Actuator

NASA Technical Reports Server (NTRS)

Baumbick, Robert J. (Inventor)

2000-01-01

The present invention discloses and teaches a unique, remote optically controlled micro actuator particularly suitable for aerospace vehicle applications wherein hot gas, or in the alternative optical energy, is employed as the medium by which shape memory alloy elements are activated. In gas turbine powered aircraft the source of the hot gas may be the turbine engine compressor or turbine sections.

Shape Memory Alloy Actuator

NASA Technical Reports Server (NTRS)

Baumbick, Robert J. (Inventor)

2002-01-01

The present invention discloses and teaches a unique, remote optically controlled micro actuator particularly suitable for aerospace vehicle applications wherein hot gas, or in the alternative optical energy, is employed as the medium by which shape memory alloy elements are activated. In gas turbine powered aircraft the source of the hot gas may be the turbine engine compressor or turbine sections.

DIGIMEN, optical mass memory investigations, volume 2

NASA Technical Reports Server (NTRS)

1977-01-01

The DIGIMEM phase of the Optical Mass Memory Investigation Program addressed problems related to the analysis, design, and implementation of a direct digital optical recorder/reproducer. Effort was placed on developing an operational archival mass storage system to support one or more key NASA missions. The primary activity of the DIGIMEM program phase was the design, fabrication, and test and evaluation of a breadboard digital optical recorder/reproducer. Starting with technology and subsystem perfected during the HOLOMEM program phase, a fully operational optical spot recording breadboard that met or exceeded all program goals was evaluated. A thorough evaluation of several high resolution electrophotographic recording films was performed and a preliminary data base management/end user requirements survey was completed.

Formation of holographic memory for optically reconfigurable gate array by angle-multiplexing recording of multi-circuit information in liquid crystal composites

NASA Astrophysics Data System (ADS)

Ogiwara, Akifumi; Maekawa, Hikaru; Watanabe, Minoru; Moriwaki, Retsu

2014-02-01

A holographic polymer-dispersed liquid crystal (HPDLC) memory to record multi-context information for an optically reconfigurable gate array is formed by the angle-multiplexing recording using a successive laser exposure in liquid crystal (LC) composites. The laser illumination system is constructed using the half mirror and photomask written by the different configuration contexts placed on the motorized stages under the control of a personal computer. The fabricated holographic memory implements a precise reconstruction of configuration contexts corresponding to the various logical circuits such as OR circuit and NOR circuit by the laser illumination at different incident angle in the HPDLC memory.

Memory technology survey

NASA Technical Reports Server (NTRS)

1981-01-01

The current status of semiconductor, magnetic, and optical memory technologies is described. Projections based on these research activities planned for the shot term are presented. Conceptual designs of specific memory buffer pplications employing bipola, CMOS, GaAs, and Magnetic Bubble devices are discussed.

Smart photodetector arrays for error control in page-oriented optical memory

NASA Astrophysics Data System (ADS)

Schaffer, Maureen Elizabeth

1998-12-01

Page-oriented optical memories (POMs) have been proposed to meet high speed, high capacity storage requirements for input/output intensive computer applications. This technology offers the capability for storage and retrieval of optical data in two-dimensional pages resulting in high throughput data rates. Since currently measured raw bit error rates for these systems fall several orders of magnitude short of industry requirements for binary data storage, powerful error control codes must be adopted. These codes must be designed to take advantage of the two-dimensional memory output. In addition, POMs require an optoelectronic interface to transfer the optical data pages to one or more electronic host systems. Conventional charge coupled device (CCD) arrays can receive optical data in parallel, but the relatively slow serial electronic output of these devices creates a system bottleneck thereby eliminating the POM advantage of high transfer rates. Also, CCD arrays are "unintelligent" interfaces in that they offer little data processing capabilities. The optical data page can be received by two-dimensional arrays of "smart" photo-detector elements that replace conventional CCD arrays. These smart photodetector arrays (SPAs) can perform fast parallel data decoding and error control, thereby providing an efficient optoelectronic interface between the memory and the electronic computer. This approach optimizes the computer memory system by combining the massive parallelism and high speed of optics with the diverse functionality, low cost, and local interconnection efficiency of electronics. In this dissertation we examine the design of smart photodetector arrays for use as the optoelectronic interface for page-oriented optical memory. We review options and technologies for SPA fabrication, develop SPA requirements, and determine SPA scalability constraints with respect to pixel complexity, electrical power dissipation, and optical power limits. Next, we examine data modulation and error correction coding for the purpose of error control in the POM system. These techniques are adapted, where possible, for 2D data and evaluated as to their suitability for a SPA implementation in terms of BER, code rate, decoder time and pixel complexity. Our analysis shows that differential data modulation combined with relatively simple block codes known as array codes provide a powerful means to achieve the desired data transfer rates while reducing error rates to industry requirements. Finally, we demonstrate the first smart photodetector array designed to perform parallel error correction on an entire page of data and satisfy the sustained data rates of page-oriented optical memories. Our implementation integrates a monolithic PN photodiode array and differential input receiver for optoelectronic signal conversion with a cluster error correction code using 0.35-mum CMOS. This approach provides high sensitivity, low electrical power dissipation, and fast parallel correction of 2 x 2-bit cluster errors in an 8 x 8 bit code block to achieve corrected output data rates scalable to 102 Gbps in the current technology increasing to 1.88 Tbps in 0.1-mum CMOS.

Laser welding of NiTi shape memory alloy: Comparison of the similar and dissimilar joints to AISI 304 stainless steel

NASA Astrophysics Data System (ADS)

Mirshekari, G. R.; Saatchi, A.; Kermanpur, A.; Sadrnezhaad, S. K.

2013-12-01

The unique properties of NiTi alloy, such as its shape memory effect, super-elasticity and biocompatibility, make it ideal material for various applications such as aerospace, micro-electronics and medical device. In order to meet the requirement of increasing applications, great attention has been given to joining of this material to itself and to other materials during past few years. Laser welding has been known as a suitable joining technique for NiTi shape memory alloy. Hence, in this work, a comparative study on laser welding of NiTi wire to itself and to AISI 304 austenitic stainless steel wire has been made. Microstructures, mechanical properties and fracture morphologies of the laser joints were investigated using optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction analysis (XRD), Vickers microhardness (HV0.2) and tensile testing techniques. The results showed that the NiTi-NiTi laser joint reached about 63% of the ultimate tensile strength of the as-received NiTi wire (i.e. 835 MPa) with rupture strain of about 16%. This joint also enabled the possibility to benefit from the pseudo-elastic properties of the NiTi component. However, tensile strength and ductility decreased significantly after dissimilar laser welding of NiTi to stainless steel due to the formation of brittle intermetallic compounds in the weld zone during laser welding. Therefore, a suitable modification process is required for improvement of the joint properties of the dissimilar welded wires.

Optical mass memory system (AMM-13). AMM/DBMS interface control document

NASA Technical Reports Server (NTRS)

Bailey, G. A.

1980-01-01

The baseline for external interfaces of a 10 to the 13th power bit, optical archival mass memory system (AMM-13) is established. The types of interfaces addressed include data transfer; AMM-13, Data Base Management System, NASA End-to-End Data System computer interconnect; data/control input and output interfaces; test input data source; file management; and facilities interface.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dall'Arno, Michele; ICFO-Institut de Ciencies Fotoniques, E-08860 Castelldefels; Quit Group, Dipartimento di Fisica, via Bassi 6, I-27100 Pavia

We address the problem of quantum reading of optical memories, namely the retrieving of classical information stored in the optical properties of a media with minimum energy. We present optimal strategies for ambiguous and unambiguous quantum reading of unitary optical memories, namely when one's task is to minimize the probability of errors in the retrieved information and when perfect retrieving of information is achieved probabilistically, respectively. A comparison of the optimal strategy with coherent probes and homodyne detection shows that the former saves orders of magnitude of energy when achieving the same performances. Experimental proposals for quantum reading which aremore » feasible with present quantum optical technology are reported.« less

Optical memory based on quantized atomic center-of-mass motion.

PubMed

Lopez, J P; de Almeida, A J F; Felinto, D; Tabosa, J W R

2017-11-01

We report a new type of optical memory using a pure two-level system of cesium atoms cooled by the magnetically assisted Sisyphus effect. The optical information of a probe field is stored in the coherence between quantized vibrational levels of the atoms in the potential wells of a 1-D optical lattice. The retrieved pulse shows Rabi oscillations with a frequency determined by the reading beam intensity and are qualitatively understood in terms of a simple theoretical model. The exploration of the external degrees of freedom of an atom may add another capability in the design of quantum-information protocols using light.

Analysis of decoherence mechanisms in a single-atom quantum memory

NASA Astrophysics Data System (ADS)

Koerber, Matthias; Langenfeld, Stefan; Morin, Olivier; Neuzner, Andreas; Ritter, Stephan; Rempe, Gerhard

2017-04-01

While photons are ideal for the transmission of quantum information, they require dedicated memories for long-term storage. The challenge for such a photonic quantum memory is the combination of an efficient light-matter interface with a low-decoherence encoding. To increase the time before the quantum information is lost, a thorough analysis of the relevant decoherence mechanisms is indispensable. Our optical quantum memory consists of a single rubidium atom trapped in a two dimensional optical lattice in a high-finesse Fabry-Perot-type optical resonator. The qubit is initially stored in a superposition of Zeeman states, making magnetic field fluctuations the dominant source of decoherence. The impact to this type of noise is greatly reduced by transferring the qubit into a subspace less susceptible to magnetic field fluctuations. In this configuration, the achievable coherence times are no longer limited by those fluctuations, but decoherence mechanisms induced by the trapping beams pose a new limit. We will discuss the origin and magnitude of the relevant effects and strategies for possible resolutions.

Origin of Reversible Photoinduced Phase Separation in Hybrid Perovskites

NASA Astrophysics Data System (ADS)

Bischak, Connor G.; Hetherington, Craig L.; Wu, Hao; Aloni, Shaul; Ogletree, D. Frank; Limmer, David T.; Ginsberg, Naomi S.

2017-02-01

Nonequilibrium processes occurring in functional materials can significantly impact device efficiencies and are often difficult to characterize due to the broad range of length and time scales involved. In particular, mixed halide hybrid perovskites are promising for optoelectronics, yet the halides reversibly phase separate when photo-excited, significantly altering device performance. By combining nanoscale imaging and multiscale modeling, we elucidate the mechanism underlying this phenomenon, demonstrating that local strain induced by photo-generated polarons promotes halide phase separation and leads to nucleation of light-stabilized iodide-rich clusters. This effect relies on the unique electromechanical properties of hybrid materials, characteristic of neither their organic nor inorganic constituents alone. Exploiting photo-induced phase separation and other nonequilibrium phenomena in hybrid materials, generally, could enable new opportunities for expanding the functional applications in sensing, photoswitching, optical memory, and energy storage.

Characterization of mechanical properties of pseudoelastic shape memory alloys under harmonic excitation

NASA Astrophysics Data System (ADS)

Böttcher, J.; Jahn, M.; Tatzko, S.

2017-12-01

Pseudoelastic shape memory alloys exhibit a stress-induced phase transformation which leads to high strains during deformation of the material. The stress-strain characteristic during this thermomechanical process is hysteretic and results in the conversion of mechanical energy into thermal energy. This energy conversion allows for the use of shape memory alloys in vibration reduction. For the application of shape memory alloys as vibration damping devices a dynamic modeling of the material behavior is necessary. In this context experimentally determined material parameters which accurately represent the material behavior are essential for a reliable material model. Subject of this publication is the declaration of suitable material parameters for pseudoelastic shape memory alloys and the methodology of their identification from experimental investigations. The used test rig was specifically designed for the characterization of pseudoelastic shape memory alloys.

All-optical 10Gb/s ternary-CAM cell for routing look-up table applications.

PubMed

Mourgias-Alexandris, George; Vagionas, Christos; Tsakyridis, Apostolos; Maniotis, Pavlos; Pleros, Nikos

2018-03-19

We experimentally demonstrate the first all-optical Ternary-Content Addressable Memory (T-CAM) cell that operates at 10Gb/s and comprises two monolithically integrated InP Flip-Flops (FF) and a SOA-MZI optical XOR gate. The two FFs are responsible for storing the data bit and the ternary state 'X', respectively, with the XOR gate used for comparing the stored FF-data and the search bit. The experimental results reveal error-free operation at 10Gb/s for both Write and Ternary Content Addressing of the T-CAM cell, indicating that the proposed optical T-CAM cell could in principle lead to all-optical T-CAM-based Address Look-up memory architectures for high-end routing applications.

Parallel Optical Random Access Memory (PORAM)

NASA Technical Reports Server (NTRS)

Alphonse, G. A.

1989-01-01

It is shown that the need to minimize component count, power and size, and to maximize packing density require a parallel optical random access memory to be designed in a two-level hierarchy: a modular level and an interconnect level. Three module designs are proposed, in the order of research and development requirements. The first uses state-of-the-art components, including individually addressed laser diode arrays, acousto-optic (AO) deflectors and magneto-optic (MO) storage medium, aimed at moderate size, moderate power, and high packing density. The next design level uses an electron-trapping (ET) medium to reduce optical power requirements. The third design uses a beam-steering grating surface emitter (GSE) array to reduce size further and minimize the number of components.

Working Memory Capacity and Resistance to Interference

ERIC Educational Resources Information Center

Oberauer, Klaus; Lange, Elke; Engle, Randall W.

2004-01-01

Single-task and dual-task versions of verbal and spatial serial order memory tasks were administered to 120 students tested for working memory capacity with four previously validated measures. In the dual-task versions, similarity between the memory material and the material of the secondary processing task was varied. With verbal material, three…

Shape memory polymer foams for endovascular therapies

DOEpatents

Wilson, Thomas S.; Maitland, Duncan J.

2017-03-21

A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical anomaly.

Shape memory polymer foams for endovascular therapies

DOEpatents

Wilson, Thomas S [Castro Valley, CA; Maitland, Duncan J [Pleasant Hill, CA

2012-03-13

A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical anomaly.

Shape memory polymer foams for endovascular therapies

DOEpatents

Wilson, Thomas S.; Maitland, Duncan J.

2015-05-26

A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical anomaly.

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber.

PubMed

Pradhan, Rajib

2014-06-10

This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

Modeling the action-potential-sensitive nonlinear-optical response of myelinated nerve fibers and short-term memory

NASA Astrophysics Data System (ADS)

Shneider, M. N.; Voronin, A. A.; Zheltikov, A. M.

2011-11-01

The Goldman-Albus treatment of the action-potential dynamics is combined with a phenomenological description of molecular hyperpolarizabilities into a closed-form model of the action-potential-sensitive second-harmonic response of myelinated nerve fibers with nodes of Ranvier. This response is shown to be sensitive to nerve demyelination, thus enabling an optical diagnosis of various demyelinating diseases, including multiple sclerosis. The model is applied to examine the nonlinear-optical response of a three-neuron reverberating circuit—the basic element of short-term memory.

Novel shape memory alloy optical fibre connection method

NASA Astrophysics Data System (ADS)

Trouillard, G.; Zivojinovic, P.; Cerutti, R.; Godmaire, X. Pruneau; Weynant, E.

2010-02-01

In this paper, the capacity and quality of a shape memory alloy device is demonstrated for installation and connection of 125-μm to 1000-μm optical fibres. The new mechanical splice has the particularity of using a very simple tool for aligning and holding the cladding of fibres itself without the need of glue. Optimend main characteristics are its small dimensions (few millimetres), reusability, glueless, ruggedness, low temperature variation, heat dissipation and ease of use. These properties are very suitable for many optical fibre applications where both quick and reliable connections are desirable.

Tuning the Electrical Memory Behavior from Nonvolatile to Volatile in Functional Copolyimides Bearing Varied Fluorene and Pyrene Moieties

NASA Astrophysics Data System (ADS)

Jia, Nanfang; Qi, Shengli; Tian, Guofeng; Wang, Xiaodong; Wu, Dezhen

2017-04-01

For producing polymer based electronics with good memory behavior, a series of functional copolyimides were designed and synthesized in this work by copolymerizing 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride (DSDA) with (9,9'-bis(4-aminophenyl)fluorene) (BAPF) and N, N-bis(4-aminophenyl) aminopyrene (DAPAP) diamines. The synthesized copolyimides DSDA/(DAPAP/BAPF) were denoted as coPI-DAPAP x ( x = 100, 50, 20, 10, 5, 1, 0), where x% represents the molar fraction of the DAPAP unit in the diamines. Characterization results indicate that the coPI-DAPAP x exhibits tunable electrical switching behaviors from write once read many times (WORM, nonvolatile, coPI-DAPAP100, coPI-DAPAP50, coPI-DAPAP20, coPI-DAPAP10) to the static random access memory (SRAM, volatile, coPI-DAPAP5, coPI-DAPAP1) with the variation of the DAPAP content. Optical and electrochemical characterization show gradually decreasing highest occupied molecular orbital levels and enlarged energy gap with the decrease of the DAPAP moiety, suggesting decreasing charge-transfer effect in the copolyimides, which can account for the observed WORM-SRAM memory conversion. Meanwhile, the charge transfer process was elucidated by quantum chemical calculation at B3LYP/6-31G(d) theory level. This work shows the effect of electron donor content on the memory behavior of polymer electronic materials.

Holographic optical elements: Fabrication and testing

NASA Technical Reports Server (NTRS)

Zech, R. G.; Shareck, M.; Ralston, L. M.

1974-01-01

The basic properties and use of holographic optical elements were investigated to design and construct wide-angle, Fourier-transform holographic optical systems for use in a Bragg-effect optical memory. The performance characteristics are described along with the construction of the holographic system.

Reconfigurable Photonic Crystals Enabled by Multistimuli-Responsive Shape Memory Polymers Possessing Room Temperature Shape Processability.

PubMed

Fang, Yin; Leo, Sin-Yen; Ni, Yongliang; Wang, Junyu; Wang, Bingchen; Yu, Long; Dong, Zhe; Dai, Yuqiong; Basile, Vito; Taylor, Curtis; Jiang, Peng

2017-02-15

Traditional shape memory polymers (SMPs) are mostly thermoresponsive, and their applications in nano-optics are hindered by heat-demanding programming and recovery processes. By integrating a polyurethane-based shape memory copolymer with templating nanofabrication, reconfigurable/rewritable macroporous photonic crystals have been demonstrated. This SMP coupled with the unique macroporous structure enables unusual all-room-temperature shape memory cycles. "Cold" programming involving microscopic order-disorder transitions of the templated macropores is achieved by mechanically deforming the macroporous SMP membranes. The rapid recovery of the permanent, highly ordered photonic crystal structure from the temporary, disordered configuration can be triggered by multiple stimuli including a large variety of vapors and solvents, heat, and microwave radiation. Importantly, the striking chromogenic effects associated with these athermal and thermal processes render a sensitive and noninvasive optical methodology for quantitatively characterizing the intriguing nanoscopic shape memory effects. Some critical parameters/mechanisms that could significantly affect the final performance of SMP-based reconfigurable photonic crystals including strain recovery ratio, dynamics and reversibility of shape recovery, as well as capillary condensation of vapors in macropores, which play a crucial role in vapor-triggered recovery, can be evaluated using this new optical technology.

Developmental reversals in false memory: Effects of emotional valence and arousal.

PubMed

Brainerd, C J; Holliday, R E; Reyna, V F; Yang, Y; Toglia, M P

2010-10-01

Do the emotional valence and arousal of events distort children's memories? Do valence and arousal modulate counterintuitive age increases in false memory? We investigated those questions in children, adolescents, and adults using the Cornell/Cortland Emotion Lists, a word list pool that induces false memories and in which valence and arousal can be manipulated factorially. False memories increased with age for unpresented semantic associates of word lists, and net accuracy (the ratio of true memory to total memory) decreased with age. These surprising developmental trends were more pronounced for negatively valenced materials than for positively valenced materials, they were more pronounced for high-arousal materials than for low-arousal materials, and developmental increases in the effects of arousal were small in comparison with developmental increases in the effects of valence. These findings have ramifications for legal applications of false memory research; materials that share the emotional hallmark of crimes (events that are negatively valenced and arousing) produced the largest age increases in false memory and the largest age declines in net accuracy. Copyright 2010 Elsevier Inc. All rights reserved.

Nanoscale phase change memory materials.

PubMed

Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

2012-08-07

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Telecom-Wavelength Atomic Quantum Memory in Optical Fiber for Heralded Polarization Qubits.

PubMed

Jin, Jeongwan; Saglamyurek, Erhan; Puigibert, Marcel lí Grimau; Verma, Varun; Marsili, Francesco; Nam, Sae Woo; Oblak, Daniel; Tittel, Wolfgang

2015-10-02

Polarization-encoded photons at telecommunication wavelengths provide a compelling platform for practical realizations of photonic quantum information technologies due to the ease of performing single qubit manipulations, the availability of polarization-entangled photon-pair sources, and the possibility of leveraging existing fiber-optic links for distributing qubits over long distances. An optical quantum memory compatible with this platform could serve as a building block for these technologies. Here we present the first experimental demonstration of an atomic quantum memory that directly allows for reversible mapping of quantum states encoded in the polarization degree of freedom of a telecom-wavelength photon. We show that heralded polarization qubits at a telecom wavelength are stored and retrieved with near-unity fidelity by implementing the atomic frequency comb protocol in an ensemble of erbium atoms doped into an optical fiber. Despite remaining limitations in our proof-of-principle demonstration such as small storage efficiency and storage time, our broadband light-matter interface reveals the potential for use in future quantum information processing.

Mass Storage and Retrieval at Rome Laboratory

NASA Technical Reports Server (NTRS)

Kann, Joshua L.; Canfield, Brady W.; Jamberdino, Albert A.; Clarke, Bernard J.; Daniszewski, Ed; Sunada, Gary

1996-01-01

As the speed and power of modern digital computers continues to advance, the demands on secondary mass storage systems grow. In many cases, the limitations of existing mass storage reduce the overall effectiveness of the computing system. Image storage and retrieval is one important area where improved storage technologies are required. Three dimensional optical memories offer the advantage of large data density, on the order of 1 Tb/cm(exp 3), and faster transfer rates because of the parallel nature of optical recording. Such a system allows for the storage of multiple-Gbit sized images, which can be recorded and accessed at reasonable rates. Rome Laboratory is currently investigating several techniques to perform three-dimensional optical storage including holographic recording, two-photon recording, persistent spectral-hole burning, multi-wavelength DNA recording, and the use of bacteriorhodopsin as a recording material. In this paper, the current status of each of these on-going efforts is discussed. In particular, the potential payoffs as well as possible limitations are addressed.

Read-write holographic memory with iron-doped lithium niobate

NASA Technical Reports Server (NTRS)

Alphonse, G. A.; Phillips, W.

1975-01-01

The response of iron doped lithium niobate under conditions corresponding to hologram storage and retrieval is described, and the material's characteristics are discussed. The optical sensitivity can be improved by heavy chemical reduction of lightly doped crystals such that most of the iron is in the divalent state, the remaining part being trivalent. The best reduction process found to be reproducible so far is the anneal of the doped crystal in the presence of a salt such as lithium carbonate. It is shown by analysis and simulation that a page-oriented read-write holographic memory with 1,000 bits per page would have a cycle time of about 60 ms and a signal-to-noise ratio of 27 db. This cycle time, although still too long for a practical system, represents an improvement of two orders of magnitude over that of previous laboratory prototypes using different storage media.

Chalcogenide phase-change thin films used as grayscale photolithography materials.

PubMed

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

How does negative emotion cause false memories?

PubMed

Brainerd, C J; Stein, L M; Silveira, R A; Rohenkohl, G; Reyna, V F

2008-09-01

Remembering negative events can stimulate high levels of false memory, relative to remembering neutral events. In experiments in which the emotional valence of encoded materials was manipulated with their arousal levels controlled, valence produced a continuum of memory falsification. Falsification was highest for negative materials, intermediate for neutral materials, and lowest for positive materials. Conjoint-recognition analysis produced a simple process-level explanation: As one progresses from positive to neutral to negative valence, false memory increases because (a) the perceived meaning resemblance between false and true items increases and (b) subjects are less able to use verbatim memories of true items to suppress errors.

Variable-Resistivity Material For Memory Circuits

NASA Technical Reports Server (NTRS)

Nagasubramanian, Ganesan; Distefano, Salvador; Moacanin, Jovan

1989-01-01

Nonvolatile memory elements packed densely. Electrically-erasable, programmable, read-only memory matrices made with newly-synthesized organic material of variable electrical resistivity. Material, polypyrrole doped with tetracyanoquinhydrone (TCNQ), changes reversibly between insulating or higher-resistivity state and conducting or low-resistivity state. Thin film of conductive polymer separates layer of row conductors from layer of column conductors. Resistivity of film at each intersection and, therefore, resistance of memory element defined by row and column, increased or decreased by application of suitable switching voltage. Matrix circuits made with this material useful for experiments in associative electronic memories based on models of neural networks.

Optical backplane interconnect switch for data processors and computers

NASA Technical Reports Server (NTRS)

Hendricks, Herbert D.; Benz, Harry F.; Hammer, Jacob M.

1989-01-01

An optoelectronic integrated device design is reported which can be used to implement an all-optical backplane interconnect switch. The switch is sized to accommodate an array of processors and memories suitable for direct replacement into the basic avionic multiprocessor backplane. The optical backplane interconnect switch is also suitable for direct replacement of the PI bus traffic switch and at the same time, suitable for supporting pipelining of the processor and memory. The 32 bidirectional switchable interconnects are configured with broadcast capability for controls, reconfiguration, and messages. The approach described here can handle a serial interconnection of data processors or a line-to-link interconnection of data processors. An optical fiber demonstration of this approach is presented.

Optical resonators and neural networks

NASA Astrophysics Data System (ADS)

Anderson, Dana Z.

1986-08-01

It may be possible to implement neural network models using continuous field optical architectures. These devices offer the inherent parallelism of propagating waves and an information density in principle dictated by the wavelength of light and the quality of the bulk optical elements. Few components are needed to construct a relatively large equivalent network. Various associative memories based on optical resonators have been demonstrated in the literature, a ring resonator design is discussed in detail here. Information is stored in a holographic medium and recalled through a competitive processes in the gain medium supplying energy to the ring rsonator. The resonator memory is the first realized example of a neural network function implemented with this kind of architecture.

Attention and material-specific memory in children with lateralized epilepsy.

PubMed

Engle, Jennifer A; Smith, Mary Lou

2010-01-01

Epilepsy is frequently associated with attention and memory problems. In adults, lateralization of seizure focus impacts the type of memory affected (left-sided lesions primarily impact verbal memory, while right-sided lesions primarily impact visual memory), but the relationship between seizure focus and the nature of the memory impairment is less clear in children. The current study examines the correlation between parent-reported attention problems and material-specific memory (verbal or visual-spatial) in 65 children (ages 6-16) with medically intractable lateralized epilepsy. There were no significant differences in attention and memory between those with left-lateralized epilepsy (n=25) and those with right-lateralized epilepsy (n=40). However, in the left-lateralized group attention problems were significantly negatively correlated only with delayed visual memory (r=-.450, p<.05), while the right-lateralized group demonstrated the opposite pattern (attention problems significantly negatively correlated with delayed verbal memory; r=-.331, p<.05). These findings suggest that lateralization of seizure focus may in fact impact children's memory in a material-specific manner, while problems with attention may impact memory more globally. Therefore, interventions designed to improve attention in children with epilepsy may have utility in improving certain aspects of memory, but further suggest that in children with lateralized epilepsy, material-specific memory deficits may not resolve with such interventions.

Adiabatic passage in photon-echo quantum memories

NASA Astrophysics Data System (ADS)

Demeter, Gabor

2013-11-01

Photon-echo-based quantum memories use inhomogeneously broadened, optically thick ensembles of absorbers to store a weak optical signal and employ various protocols to rephase the atomic coherences for information retrieval. We study the application of two consecutive, frequency-chirped control pulses for coherence rephasing in an ensemble with a “natural” inhomogeneous broadening. Although propagation effects distort the two control pulses differently, chirped pulses that drive adiabatic passage can rephase atomic coherences in an optically thick storage medium. Combined with spatial phase-mismatching techniques to prevent primary echo emission, coherences can be rephased around the ground state to achieve secondary echo emission with close to unit efficiency. Potential advantages over similar schemes working with π pulses include greater potential signal fidelity, reduced noise due to spontaneous emission, and better capability for the storage of multiple memory channels.

A model for ferromagnetic shape memory thin film actuators

NASA Astrophysics Data System (ADS)

Lee, Kwok-Lun; Seelecke, Stefan

2005-05-01

The last decade has witnessed the discovery of materials combining shape memory behavior with ferromagnetic properties (FSMAs), see James & Wuttig1, James et al.2, Ullakko et al.3. These materials feature the so-called giant magnetostrain effect, which, in contrast to conventional magnetostriction is due motion of martensite twins. This effect has motivated the development of a new class of active materials transducers, which combine intrinsic sensing capabilities with superior actuation speed and improved efficiency when compared to conventional shape memory alloys. Currently, thin film technology is being developed intensively in order to pave the way for applications in micro- and nanotechnology. As an example, Kohl et al., recently proposed a novel actuation mechanism based on NiMnGa thin film technology, which makes use of both the ferromagnetic transition and the martensitic transformation allowing the realization of an almost perfect antagonism in a single component part. The implementation of the mechanism led to the award-winning development of an optical microscanner. Possible applications in nanotechnology arise, e.g., by combination of smart NiMnGa actuators with scanning probe technologies. The key aspect of Kohl's device is the fact that it employs electric heating for actuation, which requires a thermo-magneto-mechanical model for analysis. The research presented in this paper aims at the development of a model that simulates this particular material behavior. It is based on ideas originally developed for conventional shape memory alloy behavior, (Mueller & Achenbach, Achenbach, Seelecke, Seelecke & Mueller) and couples it with a simple expression for the nonlinear temperature- and position-dependent effective magnetic force. This early and strongly simplified version does not account for a full coupling between SMA behavior and ferromagnetism yet, and does not incorporate the hysteretic character of the magnetization phenomena either. It can however be used to explain the basic actuation mechanism and highlight the role of coupled magnetic and martensitic transformation with respect to the actuator performance. In particular will we be able to develop guidelines for desirable alloy compositions, such that the resulting transition temperatures guarantee optimized actuator performance.

Optoelectronic Inner-Product Neural Associative Memory

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang

1993-01-01

Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

Real-time associative memory with photorefractive crystal KNSBN and liquid-crystal optical switches

NASA Astrophysics Data System (ADS)

Xu, Haiying; Yuan, Yang Y.; Yu, Youlong; Xu, Kebin; Xu, Yuhuan; Zhu, De-Rui

1990-05-01

We present a real-time holographic associative memory implemented with photorefractive KNSBN : Co crystal as memory element and liquid crystal electrooptical switches as reflective thresholding device. The experimental results show that the system has real-time multiple-image storage and recall function.

Focused Logistics, Joint Vision 2010: A Joint Logistics Roadmap

DTIC Science & Technology

2010-01-01

AIS). AIT devices include bar codes for individual items, optical memory cards for multipacks and containers, radio frequency tags for containers and...Fortezza Card and Firewall technologies are being developed to prevent unau- thorized access. As for infrastructure, DISA has already made significant in...radio frequency tags and optical memory cards , to continuously update the JTAV database. By September 1998, DSS will be deployed in all wholesale

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter.

PubMed

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-09

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter

PubMed Central

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-01-01

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics. PMID:28276500

Novel Programmable Shape Memory Polystyrene Film: A Thermally Induced Beam-power Splitter

NASA Astrophysics Data System (ADS)

Li, Peng; Han, Yu; Wang, Wenxin; Liu, Yanju; Jin, Peng; Leng, Jinsong

2017-03-01

Micro/nanophotonic structures that are capable of optical wave-front shaping are implemented in optical waveguides and passive optical devices to alter the phase of the light propagating through them. The beam division directions and beam power distribution depend on the design of the micro/nanostructures. The ultimate potential of advanced micro/nanophotonic structures is limited by their structurally rigid, functional singleness and not tunable against external impact. Here, we propose a thermally induced optical beam-power splitter concept based on a shape memory polystyrene film with programmable micropatterns. The smooth film exhibits excellent transparency with a transmittance of 95% in the visible spectrum and optical stability during a continuous heating process up to 90 °C. By patterning double sided shape memory polystyrene film into erasable and switchable micro-groove gratings, the transmission light switches from one designed light divided directions and beam-power distribution to another because of the optical diffraction effect of the shape changing micro gratings during the whole thermal activated recovery process. The experimental and theoretical results demonstrate a proof-of-principle of the beam-power splitter. Our results can be adapted to further extend the applications of micro/nanophotonic devices and implement new features in the nanophotonics.

Nonlinear model for an optical read-only-memory disk readout channel based on an edge-spread function.

PubMed

Kobayashi, Seiji

2002-05-10

A point-spread function (PSF) is commonly used as a model of an optical disk readout channel. However, the model given by the PSF does not contain the quadratic distortion generated by the photo-detection process. We introduce a model for calculating an approximation of the quadratic component of a signal. We show that this model can be further simplified when a read-only-memory (ROM) disk is assumed. We introduce an edge-spread function by which a simple nonlinear model of an optical ROM disk readout channel is created.

Trinary flip-flops using Savart plate and spatial light modulator for optical computation in multivalued logic

NASA Astrophysics Data System (ADS)

Ghosh, Amal K.; Basuray, Amitabha

2008-11-01

The memory devices in multi-valued logic are of most significance in modern research. This paper deals with the implementation of basic memory devices in multi-valued logic using Savart plate and spatial light modulator (SLM) based optoelectronic circuits. Photons are used here as the carrier to speed up the operations. Optical tree architecture (OTA) has been also utilized in the optical interconnection network. We have exploited the advantages of Savart plates, SLMs and OTA and proposed the SLM based high speed JK, D-type and T-type flip-flops in a trinary system.

Multi-wavelength access gate for WDM-formatted words in optical RAM row architectures

NASA Astrophysics Data System (ADS)

Fitsios, D.; Alexoudi, T.; Vagionas, C.; Miliou, A.; Kanellos, G. T.; Pleros, N.

2013-03-01

Optical RAM has emerged as a promising solution for overcoming the "Memory Wall" of electronics, indicating the use of light in RAM architectures as the approach towards enabling ps-regime memory access times. Taking a step further towards exploiting the unique wavelength properties of optical signals, we reveal new architectural perspectives in optical RAM structures by introducing WDM principles in the storage area. To this end, we demonstrate a novel SOAbased multi-wavelength Access Gate for utilization in a 4x4 WDM optical RAM bank architecture. The proposed multiwavelength Access Gate can simultaneously control random access to a 4-bit optical word, exploiting Cross-Gain-Modulation (XGM) to process 8 Bit and Bit channels encoded in 8 different wavelengths. It also suggests simpler optical RAM row architectures, allowing for the effective sharing of one multi-wavelength Access Gate for each row, substituting the eight AGs in the case of conventional optical RAM architectures. The scheme is shown to support 10Gbit/s operation for the incoming 4-bit data streams, with a power consumption of 15mW/Gbit/s. All 8 wavelength channels demonstrate error-free operation with a power penalty lower than 3 dB for all channels, compared to Back-to-Back measurements. The proposed optical RAM architecture reveals that exploiting the WDM capabilities of optical components can lead to RAM bank implementations with smarter column/row encoders/decoders, increased circuit simplicity, reduced number of active elements and associated power consumption. Moreover, exploitation of the wavelength entity can release significant potential towards reconfigurable optical cache mapping schemes when using the wavelength dimension for memory addressing.

Design and Fabrication of Aspheric Microlens Array for Optical Read-Only-Memory Card System

NASA Astrophysics Data System (ADS)

Kim, Hongmin; Jeong, Gibong; Kim, Young‑Joo; Kang, Shinill

2006-08-01

An optical head based on the Talbot effect with an aspheric microlens array for an optical read-only-memory (ROM) card system was designed and fabricated. The mathematical expression for the wavefield diffracted by a periodic microlens array showed that the amplitude distribution at the Talbot plane from the focal plane of the microlens array was identically equal to that at the focal plane. To use a reflow microlens array as a master pattern of an ultraviolet-imprinted (UV-imprinted) microlens array, the reflow microlens was defined as having an aspheric shape. To obtain optical probes with good optical qualities, a microlens array with the minimum spherical aberration was designed by ray tracing. The reflow condition was optimized to realize the master pattern of a microlens with a designed aspheric shape. The intensity distribution of the optical probes at the Talbot plane from the focal plane showed a diffraction-limited shape.

Displays, memories, and signal processing: A compilation

NASA Technical Reports Server (NTRS)

1975-01-01

Articles on electronics systems and techniques were presented. The first section is on displays and other electro-optical systems; the second section is devoted to signal processing. The third section presented several new memory devices for digital equipment, including articles on holographic memories. The latest patent information available is also given.

Optical memory system technology. Citations from the International Aerospace Abstracts data base

NASA Technical Reports Server (NTRS)

Zollars, G. F.

1980-01-01

Approximately 213 citations from the international literature which concern the development of the optical data storage system technology are presented. Topics covered include holographic computer storage devices, crystal, magneto, and electro-optics, imaging techniques, in addition to optical data processing and storage.

Holographic memory system based on projection recording of computer-generated 1D Fourier holograms.

PubMed

Betin, A Yu; Bobrinev, V I; Donchenko, S S; Odinokov, S B; Evtikhiev, N N; Starikov, R S; Starikov, S N; Zlokazov, E Yu

2014-10-01

Utilization of computer generation of holographic structures significantly simplifies the optical scheme that is used to record the microholograms in a holographic memory record system. Also digital holographic synthesis allows to account the nonlinear errors of the record system to improve the microholograms quality. The multiplexed record of holograms is a widespread technique to increase the data record density. In this article we represent the holographic memory system based on digital synthesis of amplitude one-dimensional (1D) Fourier transform holograms and the multiplexed record of these holograms onto the holographic carrier using optical projection scheme. 1D Fourier transform holograms are very sensitive to orientation of the anamorphic optical element (cylindrical lens) that is required for encoded data object reconstruction. The multiplex record of several holograms with different orientation in an optical projection scheme allowed reconstruction of the data object from each hologram by rotating the cylindrical lens on the corresponding angle. Also, we discuss two optical schemes for the recorded holograms readout: a full-page readout system and line-by-line readout system. We consider the benefits of both systems and present the results of experimental modeling of 1D Fourier holograms nonmultiplex and multiplex record and reconstruction.

Supramolecular ferroelectrics.

PubMed

Tayi, Alok S; Kaeser, Adrien; Matsumoto, Michio; Aida, Takuzo; Stupp, Samuel I

2015-04-01

Supramolecular chemistry uses non-covalent interactions to coax molecules into forming ordered assemblies. The construction of ordered materials with these reversible bonds has led to dramatic innovations in organic electronics, polymer science and biomaterials. Here, we review how supramolecular strategies can advance the burgeoning field of organic ferroelectricity. Ferroelectrics - materials with a spontaneous and electrically reversible polarization - are touted for use in non-volatile computer memories, sensors and optics. Historically, this physical phenomenon has been studied in inorganic materials, although some organic examples are known and strong interest exists to extend the search for ferroelectric molecular systems. Other undiscovered applications outside this regime could also emerge. We describe the key features necessary for molecular and supramolecular dipoles in organic ferroelectrics and their incorporation into ordered systems, such as porous frameworks and liquid crystals. The goal of this Review is to motivate the development of innovative supramolecular ferroelectrics that exceed the performance and usefulness of known systems.

Complete diagnostics of pyroactive structures for smart systems of optoelectronics

NASA Astrophysics Data System (ADS)

Bravina, Svetlana L.; Morozovsky, Nicholas V.

1998-04-01

The results of study of pyroelectric phenomena in ferroelectric materials for evidence of the possibility to embody the functions promising for creation of smart systems for optoelectronic applications are presented. Designing such systems requires the development of methods for non- destructive complete diagnostics preferably by developing the self-diagnostic ability inherent in materials with the features of smart/intelligent ones. The complex method of complete non-destructive qualification of pyroactive materials based on the method of dynamic photopyroelectric effect allows the determination of pyroelectric, piezoelectric, ferroelectric, dielectric and thermophysical characteristics. The measuring system which allows the study of these characteristics and also memory effects, switching effects, fatigue and degradation process, self-repair process and others is presented. Sample pyroactive system with increased intelligence, such as systems with built-in adaptive controllable domain structure promising for functional optics are developed and peculiarities of their characterization are discussed.

Adaptive smart wing design for military aircraft: requirements, concepts, and payoffs

NASA Astrophysics Data System (ADS)

Kudva, Jayanth N.; Appa, Kari; Van Way, Craig B.; Lockyer, Allen J.

1995-05-01

New developments in smart structures and materials have made it possible to revisit earlier work in adaptive and flexible wing technology, and remove some of the limitations for technology transition to next-generation aircraft. Research performed by Northrop Grumman, under internal funding, has led to a new program sponsored by ARPA to investigate the application of smart structures and materials technologies to twist and adapt and aircraft wing. Conceptual designs are presented based on state-of-the-art materials, including shape memory alloys, piezoelectrics, and fiber optic sensors for incorporation in a proposed smart wing design. Plans are described to demonstrate proof-of-concept on a prototype 1/10 scale -18 model that will be tested in a wind tunnel for final validation. Highlights of the proposed program are summarized with respect to program objectives, requirements, key concept design features, demonstration testing, and smart wing technology payoffs and risks.

Investigative study of holographic recording materials development

NASA Technical Reports Server (NTRS)

1972-01-01

The potential of certain cis-trans isomers and doped LiNbO3 for the holographic read/write/erase memory application was investigated. The cis-trans work involved the photochemical investigation of a number of potential materials as well as specific molecular engineering efforts on alpha-methyl stilbene and its derivatives. These efforts resulted in an increase in the change in index of refraction, and thereby, in potential recording utility, of an order of magnitude. The work on LiNbO3 was directed toward a preliminary investigation of the dynamics of the writing process. Several samples and a variety of writing conditions were investigated. An unexpected and as yet unexplained improvement in material behavior with continued recycling was observed. In addition, some effort was devoted to an analysis of the physical conditions under which several current theories of the optical damage process are valid.

The effects of glucose dose and dual-task performance on memory for emotional material.

PubMed

Brandt, Karen R; Sünram-Lea, Sandra I; Jenkinson, Paul M; Jones, Emma

2010-07-29

Whilst previous research has shown that glucose administration can boost memory performance, research investigating the effects of glucose on memory for emotional material has produced mixed findings. Whereas some research has shown that glucose impairs memory for emotional material, other research has shown that glucose has no effect on emotional items. The aim of the present research was therefore to provide further investigation of the role of glucose on the recognition of words with emotional valence by exploring effects of dose and dual-task performance, both of which affect glucose facilitation effects. The results replicated past research in showing that glucose administration, regardless of dose or dual-task conditions, did not affect the memorial advantage enjoyed by emotional material. This therefore suggests an independent relationship between blood glucose levels and memory for emotional material. Copyright 2010 Elsevier B.V. All rights reserved.

Efficient teleportation between remote single-atom quantum memories.

PubMed

Nölleke, Christian; Neuzner, Andreas; Reiserer, Andreas; Hahn, Carolin; Rempe, Gerhard; Ritter, Stephan

2013-04-05

We demonstrate teleportation of quantum bits between two single atoms in distant laboratories. Using a time-resolved photonic Bell-state measurement, we achieve a teleportation fidelity of (88.0 ± 1.5)%, largely determined by our entanglement fidelity. The low photon collection efficiency in free space is overcome by trapping each atom in an optical cavity. The resulting success probability of 0.1% is almost 5 orders of magnitude larger than in previous experiments with remote material qubits. It is mainly limited by photon propagation and detection losses and can be enhanced with a cavity-based deterministic Bell-state measurement.

Manufacturing of Smart Structures Using Fiber Placement Manufacturing Processes

NASA Technical Reports Server (NTRS)

Thomas, Matthew M.; Glowasky, Robert A.; McIlroy, Bruce E.; Story, Todd A.

1996-01-01

Smart structures research and development, with the ultimate aim of rapid commercial and military production of these structures, are at the forefront of the Synthesis and Processing of Intelligent Cost-Effective Structures (SPICES) program. As part of this ARPA-sponsored program, MDA-E is using fiber placement processes to manufacture integrated smart structure systems. These systems comprise advanced composite structures with embedded fiber optic sensors, shape memory alloys, piezoelectric actuators, and miniature accelerometers. Cost-effective approaches and solutions to smart material synthesis in the fiber-placement process, based upon integrated product development, are discussed herein.

Potential High-Temperature Shape-Memory-Alloy Actuator Material Identified

NASA Technical Reports Server (NTRS)

Noebe, Ronald D.; Gaydosh, Darrell J.; Biles, Tiffany A.; Garg, Anita

2005-01-01

Shape-memory alloys are unique "smart materials" that can be used in a wide variety of adaptive or "intelligent" components. Because of a martensitic solid-state phase transformation in these materials, they can display rather unusual mechanical properties including shape-memory behavior. This phenomenon occurs when the material is deformed at low temperatures (below the martensite finish temperature, Mf) and then heated through the martensite-to-austenite phase transformation. As the material is heated to the austenite finish temperature Af, it is able to recover its predeformed shape. If a bias is applied to the material as it tries to recover its original shape, work can be extracted from the shape-memory alloy as it transforms. Therefore, shape-memory alloys are being considered for compact solid-state actuation devices to replace hydraulic, pneumatic, or motor-driven systems.

Towards quantum networks of single spins: analysis of a quantum memory with an optical interface in diamond.

PubMed

Blok, M S; Kalb, N; Reiserer, A; Taminiau, T H; Hanson, R

2015-01-01

Single defect centers in diamond have emerged as a powerful platform for quantum optics experiments and quantum information processing tasks. Connecting spatially separated nodes via optical photons into a quantum network will enable distributed quantum computing and long-range quantum communication. Initial experiments on trapped atoms and ions as well as defects in diamond have demonstrated entanglement between two nodes over several meters. To realize multi-node networks, additional quantum bit systems that store quantum states while new entanglement links are established are highly desirable. Such memories allow for entanglement distillation, purification and quantum repeater protocols that extend the size, speed and distance of the network. However, to be effective, the memory must be robust against the entanglement generation protocol, which typically must be repeated many times. Here we evaluate the prospects of using carbon nuclear spins in diamond as quantum memories that are compatible with quantum networks based on single nitrogen vacancy (NV) defects in diamond. We present a theoretical framework to describe the dephasing of the nuclear spins under repeated generation of NV spin-photon entanglement and show that quantum states can be stored during hundreds of repetitions using typical experimental coupling parameters. This result demonstrates that nuclear spins with weak hyperfine couplings are promising quantum memories for quantum networks.

Simultaneous Time, Wavelength and Intensity Measurement of Optical Memory Subsystems

DTIC Science & Technology

1998-07-01

SIMULTANEOUS TIME, WAVELENGTH AND INTENSITY MEASUREMENT PE - 61102F OF OPTICAL MEMORY SUBSYSTEMS PR - 2300 6. AUTHOR( S ) TA - 06 WU -03 Joseph Osman and...Rebecca Bussjager 7. PERFORMING ORGANIZATION NAME( S ) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER AFRL/SNDP25 letnic AFRL-SN-RS-TR- 1998...12025 Electronic Pky Rome, NY 13441-4515 9. SPONSORING/MONITORING AGENCY NAME( S ) AND ADDRESS(ES) 10. SPONSORING/MONITORING AGENCY REPORT NUMBER

Optical quantum memory based on electromagnetically induced transparency

PubMed Central

Ma, Lijun; Slattery, Oliver

2017-01-01

Electromagnetically induced transparency (EIT) is a promising approach to implement quantum memory in quantum communication and quantum computing applications. In this paper, following a brief overview of the main approaches to quantum memory, we provide details of the physical principle and theory of quantum memory based specifically on EIT. We discuss the key technologies for implementing quantum memory based on EIT and review important milestones, from the first experimental demonstration to current applications in quantum information systems. PMID:28828172

Optical quantum memory based on electromagnetically induced transparency.

PubMed

Ma, Lijun; Slattery, Oliver; Tang, Xiao

2017-04-01

Electromagnetically induced transparency (EIT) is a promising approach to implement quantum memory in quantum communication and quantum computing applications. In this paper, following a brief overview of the main approaches to quantum memory, we provide details of the physical principle and theory of quantum memory based specifically on EIT. We discuss the key technologies for implementing quantum memory based on EIT and review important milestones, from the first experimental demonstration to current applications in quantum information systems.

A chip-integrated coherent photonic-phononic memory.

PubMed

Merklein, Moritz; Stiller, Birgit; Vu, Khu; Madden, Stephen J; Eggleton, Benjamin J

2017-09-18

Controlling and manipulating quanta of coherent acoustic vibrations-phonons-in integrated circuits has recently drawn a lot of attention, since phonons can function as unique links between radiofrequency and optical signals, allow access to quantum regimes and offer advanced signal processing capabilities. Recent approaches based on optomechanical resonators have achieved impressive quality factors allowing for storage of optical signals. However, so far these techniques have been limited in bandwidth and are incompatible with multi-wavelength operation. In this work, we experimentally demonstrate a coherent buffer in an integrated planar optical waveguide by transferring the optical information coherently to an acoustic hypersound wave. Optical information is extracted using the reverse process. These hypersound phonons have similar wavelengths as the optical photons but travel at five orders of magnitude lower velocity. We demonstrate the storage of phase and amplitude of optical information with gigahertz bandwidth and show operation at separate wavelengths with negligible cross-talk.Optical storage implementations based on optomechanical resonator are limited to one wavelength. Here, exploiting stimulated Brillouin scattering, the authors demonstrate a coherent optical memory based on a planar integrated waveguide, which can operate at different wavelengths without cross-talk.

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

NASA Astrophysics Data System (ADS)

Veis, M.; Beran, L.; Zahradnik, M.; Antos, R.; Straka, L.; Kopecek, J.; Fekete, L.; Heczko, O.

2014-05-01

Magneto-optical properties of single crystal of Ni50.1Mn28.4Ga21.5 magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along {100} planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323 K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4 eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

Master-equation approach to the study of phase-change processes in data storage media

NASA Astrophysics Data System (ADS)

Blyuss, K. B.; Ashwin, P.; Bassom, A. P.; Wright, C. D.

2005-07-01

We study the dynamics of crystallization in phase-change materials using a master-equation approach in which the state of the crystallizing material is described by a cluster size distribution function. A model is developed using the thermodynamics of the processes involved and representing the clusters of size two and greater as a continuum but clusters of size one (monomers) as a separate equation. We present some partial analytical results for the isothermal case and for large cluster sizes, but principally we use numerical simulations to investigate the model. We obtain results that are in good agreement with experimental data and the model appears to be useful for the fast simulation of reading and writing processes in phase-change optical and electrical memories.

Memory effects on mechanically stimulated electric signal; diversification of stimuli impact on material memory and comments on the observed features

NASA Astrophysics Data System (ADS)

Kyriazis, Panagiotis; Stavrakas, Ilias; Anastasiadis, Cimon; Triantis, Dimos; Stonham, John

2010-05-01

Memory is defined as the ability of marble and generally of brittle geomaterials to retain 'imprints' from previous treatments and to reproduce information about these treatments under certain conditions, by analogy to the memory of human beings. Memory effects have been observed in the evolution of a variety of physical properties like the acoustic emissions of brittle materials during fracture. The existence of memory effects for the mechanically stimulated electric signal, either by Pressure (PSC) or by Bending (BSC), is examined in this work, alongside with an attempt to distinguish between the two different manifestations of 'memory' based on the electrification mechanism that is triggered at different levels of externally applied load on samples. Having identified two main mechanisms (i.e. the dynamic and the cracking) and following the human memory model, we suggest the separation of memory of a material specimen into two levels i.e. the short or temporary and long or permanent memory. For the observation and analysis of the short memory of brittle materials we have conducted experiments using the PSC technique in marble specimens. The materials are imposed to cyclic stepwise loading of the same level, scheme and direction (axial stress - unchanged position of material) in order to comply with the conditions that are proposed as suitable for memory effects study by other researchers. We have also conducted experimental tests of cyclic high level stepwise loading on amphibolite rock specimens in order to verify and study the existence of permanent memory effects. Modelling the signal recordings and studying the effects of memory on the signals, we have identified certain trends manifestation for the two types of memory that are summarised to the following points. (a) Both types of memory influence the PSC peaks evolution (exponential decrease) in cyclic loadings of the same level. (b) Permanent memory cannot be erased and affects PSC signal permanently and severely. (c) The short memory has temporary influence on the PSC signal and the impacts on the signal are milder. The main properties of the PSC signal, which are affected by the existence of memory, converge to an inertial attitude of the material to the same stimuli and they are quite common with the properties of other fracture induced signals (i.e. AE). Namely, they are the following: (a) The PSC peak evolution over loading cycles is a changing signal property either in the case of permanent or of temporary memory, with respect to the time interval between events, especially in the latter case. (b) The decrease of the dissipated electric energy during cyclic loading tests. (c) The PSC slower relaxation in each loading, quantified by the relaxation process parameters evolution. (d) The PSC signal response delay in each loading cycle increase The existence of memory effects on the mechanically stimulated electric signal is an indication that information about the deformation history (paleostresses) of the material reside inside the material. Under certain conditions such information can be revealed by analysis of the PSC signal response to specific external mechanical triggering.

Optical and magneto-optical studies of martensitic transformation in Ni-Mn-Ga magnetic shape memory alloys

NASA Astrophysics Data System (ADS)

Beran, L.; Cejpek, P.; Kulda, M.; Antos, R.; Holy, V.; Veis, M.; Straka, L.; Heczko, O.

2015-05-01

Optical and magneto-optical properties of single crystal of Ni50.1Mn28.4Ga21.5 magnetic shape memory alloy during its transformation from martensite to austenite phase were systematically studied. Crystal orientation was approximately along {100} planes of parent cubic austenite. X-ray reciprocal mapping confirmed modulated 10 M martensite phase. Temperature depended measurements of saturation magnetization revealed the martensitic transformation at 335 K during heating. Magneto-optical spectroscopy and spectroscopic ellipsometry were measured in the sample temperature range from 297 to 373 K and photon energy range from 1.2 to 6.5 eV. Magneto-optical spectra of polar Kerr rotation as well as the spectra of ellipsometric parameter Ψ exhibited significant changes when crossing the transformation temperature. These changes were assigned to different optical properties of Ni-Mn-Ga in martensite and austenite phases due to modification of electronic structure near the Fermi energy during martensitic transformation.

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subedi, Alaska; Siegrist, Theo; Singh, David J.

Ge 2Sb 2Te 5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strongmore » competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO 3, BiFeO 3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

DOE PAGES

Subedi, Alaska; Siegrist, Theo; Singh, David J.; ...

2016-05-19

Ge 2Sb 2Te 5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strongmore » competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO 3, BiFeO 3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. As a result, this different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.« less

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials.

PubMed

Mukhopadhyay, Saikat; Sun, Jifeng; Subedi, Alaska; Siegrist, Theo; Singh, David J

2016-05-19

Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. This different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.

Nanophase change for data storage applications.

PubMed

Shi, L P; Chong, T C

2007-01-01

Phase change materials are widely used for date storage. The most widespread and important applications are rewritable optical disc and Phase Change Random Access Memory (PCRAM), which utilizes the light and electric induced phase change respectively. For decades, miniaturization has been the major driving force to increase the density. Now the working unit area of the current data storage media is in the order of nano-scale. On the nano-scale, extreme dimensional and nano-structural constraints and the large proportion of interfaces will cause the deviation of the phase change behavior from that of bulk. Hence an in-depth understanding of nanophase change and the related issues has become more and more important. Nanophase change can be defined as: phase change at the scale within nano range of 100 nm, which is size-dependent, interface-dominated and surrounding materials related. Nanophase change can be classified into two groups, thin film related and structure related. Film thickness and clapping materials are key factors for thin film type, while structure shape, size and surrounding materials are critical parameters for structure type. In this paper, the recent development of nanophase change is reviewed, including crystallization of small element at nano size, thickness dependence of crystallization, effect of clapping layer on the phase change of phase change thin film and so on. The applications of nanophase change technology on data storage is introduced, including optical recording such as super lattice like optical disc, initialization free disc, near field, super-RENS, dual layer, multi level, probe storage, and PCRAM including, superlattice-like structure, side edge structure, and line type structure. Future key research issues of nanophase change are also discussed.

The mere exposure effect in patients with schizophrenia.

PubMed

Marie, A; Gabrieli, J D; Vaidya, C; Brown, B; Pratto, F; Zajonc, R B; Shaw, R J

2001-01-01

The mere exposure effect refers to the development of an emotional preference for previously unfamiliar material because of frequent exposure to that material. This study compared schizophrenia subjects (n = 20) to normal controls (n = 21) to determine whether implicit memory, as demonstrated by the mere exposure effect, was intact. Patients with schizophrenia demonstrated a normal preference for both verbal and visual materials seen earlier relative to novel materials, despite impaired performance on a recognition task for explicit memory using similar materials. Previous studies of schizophrenia subjects have shown a dissociation between implicit and explicit memory on verbal tasks. We found a similar dissociation demonstrated by normal functioning on an implicit memory task and impaired functioning on an explicit memory task. Potential implications of these findings are discussed with regard to treatment and rehabilitation.

Effects of fabrication methods on spin relaxation and crystallite quality in Tm-doped ? powders studied using spectral hole burning

NASA Astrophysics Data System (ADS)

Lutz, Thomas; Veissier, Lucile; Thiel, Charles W.; Woodburn, Philip J. T.; Cone, Rufus L.; Barclay, Paul E.; Tittel, Wolfgang

2016-01-01

High-quality rare-earth-ion (REI) doped materials are a prerequisite for many applications such as quantum memories, ultra-high-resolution optical spectrum analyzers and information processing. Compared to bulk materials, REI doped powders offer low-cost fabrication and a greater range of accessible material systems. Here we show that crystal properties, such as nuclear spin lifetime, are strongly affected by mechanical treatment, and that spectral hole burning can serve as a sensitive method to characterize the quality of REI doped powders. We focus on the specific case of thulium doped ? (Tm:YAG). Different methods for obtaining the powders are compared and the influence of annealing on the spectroscopic quality of powders is investigated on a few examples. We conclude that annealing can reverse some detrimental effects of powder fabrication and, in certain cases, the properties of the bulk material can be reached. Our results may be applicable to other impurities and other crystals, including color centers in nano-structured diamond.

Performance of solar shields. [Skylab 1 micrometeoroid shield difficulties

NASA Technical Reports Server (NTRS)

Schwinghamer, R. J.

1974-01-01

The loss of the micrometeoroid shield from the Orbital Workshop section of Skylab 1 about 63 seconds after lift-off, was the catalyst for a prodigious effort to develop a substitute for the passive portion of the thermal control system. An intensive effort is described in which numerous potential thermal shield materials were assessed, and during which period ten specific shield designs were developed and carried through various stages of development and test. Thermal shield materials data are discussed, including optical, strength, fatigue, outgassing, tackiness, ultraviolet radiation, and material memory properties. Specifically addressed are thermal shield materials selection criteria and the design, development, and test requirements associated with the successful development of Skylab thermal shields, and specifically the two thermal shields subsequently deployed over the exposed gold foil skin of the Orbital Workshop. Also considered are the general performance and thermal improvements provided by both the parasol design deployed by the Skylab 1 crew, and the sail design deployed by the Skylab 2 crew.

Shape memory polymeric composites sensing by optic fibre Bragg gratings: A very first approach

NASA Astrophysics Data System (ADS)

Quadrini, Fabrizio; Santo, Loredana; Ciminello, Monica; Concilio, Antonio; Volponi, Ruggero; Spena, Paola

2016-05-01

Shape memory polymer composites (SMPCs) have the potential for many applications in aerospace, spanning from self-repairing of structures to self-deploying of antennas, solar sails, or functional devices (e.g. for grabbing small space debris). In all these cases, it may be essential to have information about their configuration at different stages of shape recovery. In this study, the strain history of a prepreg carbon fibre system, cured with a shape memory polymer (SMP) interlayer, is monitored through a Fibre Bragg Grating (FBG), a fibre optic sensor device. SMPC has been manufactured by using traditional technologies for aerospace. After manufacturing cylindrical shape samples, an external fibre optic system is added to the composite structure; this system is especially suited for high temperatures which are necessary for SMP recovery and composite softening. Sensor functionality is checked before and after each strain history path. Optic fibre arrangement is optimized to avoid unwanted breakings whereas strains are limited by fibre collapsing, i.e. within nominal 2% of deformation. Dynamic information about shape recovery gives fundamental insights about strain evolution during time as well as its spatial distribution.

Working memory affects false memory production for emotional events.

PubMed

Mirandola, Chiara; Toffalini, Enrico; Ciriello, Alfonso; Cornoldi, Cesare

2017-01-01

Whereas a link between working memory (WM) and memory distortions has been demonstrated, its influence on emotional false memories is unclear. In two experiments, a verbal WM task and a false memory paradigm for negative, positive or neutral events were employed. In Experiment 1, we investigated individual differences in verbal WM and found that the interaction between valence and WM predicted false recognition, with negative and positive material protecting high WM individuals against false remembering; the beneficial effect of negative material disappeared in low WM participants. In Experiment 2, we lowered the WM capacity of half of the participants with a double task request, which led to an overall increase in false memories; furthermore, consistent with Experiment 1, the increase in negative false memories was larger than that of neutral or positive ones. It is concluded that WM plays a critical role in determining false memory production, specifically influencing the processing of negative material.

Unconditional polarization qubit quantum memory at room temperature

NASA Astrophysics Data System (ADS)

Namazi, Mehdi; Kupchak, Connor; Jordaan, Bertus; Shahrokhshahi, Reihaneh; Figueroa, Eden

2016-05-01

The creation of global quantum key distribution and quantum communication networks requires multiple operational quantum memories. Achieving a considerable reduction in experimental and cost overhead in these implementations is thus a major challenge. Here we present a polarization qubit quantum memory fully-operational at 330K, an unheard frontier in the development of useful qubit quantum technology. This result is achieved through extensive study of how optical response of cold atomic medium is transformed by the motion of atoms at room temperature leading to an optimal characterization of room temperature quantum light-matter interfaces. Our quantum memory shows an average fidelity of 86.6 +/- 0.6% for optical pulses containing on average 1 photon per pulse, thereby defeating any classical strategy exploiting the non-unitary character of the memory efficiency. Our system significantly decreases the technological overhead required to achieve quantum memory operation and will serve as a building block for scalable and technologically simpler many-memory quantum machines. The work was supported by the US-Navy Office of Naval Research, Grant Number N00141410801 and the Simons Foundation, Grant Number SBF241180. B. J. acknowledges financial assistance of the National Research Foundation (NRF) of South Africa.

Real-Time and Memory Correlation via Acousto-Optic Processing,

DTIC Science & Technology

1978-06-01

acousto - optic technology as an answer to these requirements appears very attractive. Three fundamental signal-processing schemes using the acousto ... optic interaction have been investigated: (i) real-time correlation and convolution, (ii) Fourier and discrete Fourier transformation, and (iii

EDITORIAL: Nonlinear optical manipulation, patterning and control in nano- and micro-scale systems Nonlinear optical manipulation, patterning and control in nano- and micro-scale systems

NASA Astrophysics Data System (ADS)

Denz, Cornelia; Simoni, Francesco

2009-03-01

Nonlinearities are becoming more and more important for a variety of applications in nanosciences, bio-medical sciences, information processing and photonics. For applications at the crossings of these fields, especially microscopic and nanoscopic imaging and manipulation, nonlinearities play a key role. They may range from simple nonlinear parameter changes up to applications in manipulating, controlling and structuring material by light, or the manipulation of light by light itself. It is this area between basic nonlinear optics and photonic applications that includes `hot' topics such as ultra-resolution optical microscopy, micro- and nanomanipulation and -structuring, or nanophotonics. This special issue contains contributions in this field, many of them from the International Conference on Nonlinear Microscopy and Optical Control held in conjunction with a network meeting of the ESF COST action MP0604 `Optical Micromanipulation by Nonlinear Nanophotonics', 19-22 February 2008, Münster, Germany. Throughout this special issue, basic investigations of material structuring by nonlinear light--matter interaction, light-induced control of nanoparticles, and novel nonlinear material investigation techniques, are presented, covering the basic field of optical manipulation and control. These papers are followed by impressive developments of optical tweezers. Nowadays, optical phase contrast tweezers, twin and especially multiple beam traps, develop particle control in a new dimension: particles can be arranged, sorted and identified with high throughput. One of the most prominent forthcoming applications of optical tweezers is in the field of microfluidics. The action of light on fluids will open new horizons in microfluidic manipulation and control. The field of optical manipulation and control is a very broad field that has developed in an impressive way, in a short time, in Europe with the installation of the MP0604 network. Top researchers from 19 countries are collaborating in this network. The editors are grateful for the active participation of all colleagues in this network, in the network meeting, and in making this special issue a success. We also extend our thanks to a great Journal of Optics A staff that have supported the editing of this special issue, especially the Publishing Editor, Julia Dickinson. Among the active colleagues in our network was also Associate Professor Erik Fällman, Umea University, Sweden. It was with great sadness that we learnt of the death of our colleague and friend in June 2008. We dedicate this special issue to his memory, and the active and always engaged contribution he made both to our conference and to the field of optical micromanipulation and optical control. Erik will be particularly remembered for his applications of optical force measurements on bacterial pili adhesion, which has stimulated a worldwide experimental and theoretical interest in this field.

Strategy in short-term memory for pictures in childhood: a near-infrared spectroscopy study.

PubMed

Sanefuji, Masafumi; Takada, Yui; Kimura, Naoko; Torisu, Hiroyuki; Kira, Ryutaro; Ishizaki, Yoshito; Hara, Toshiro

2011-02-01

In Baddeley's working memory model, verbalizable visual material such as pictures are recoded into a phonological form and then rehearsed, while auditory material is rehearsed directly. The recoding and rehearsal processes are mediated by articulatory control process in the left ventrolateral prefrontal cortex (VLPFC). Developmentally, the phonological strategy for serially-presented visual material emerges around 7 years of age, while that for auditory material is consistently present by 4 years of age. However, the strategy change may actually be correlated with memory ability as this usually increases with age. To investigate the relationship between the strategy for pictures and memory ability, we monitored the left VLPFC activation in 5 to 11 year-old children during free recall of visually- or auditorily-presented familiar objects using event-related near-infrared spectroscopy. We hypothesized that the phonological strategy of rehearsal and recoding for visual material would provoke greater activation than only rehearsal for auditory material in the left VLPFC. Therefore, we presumed that the activation difference for visual material compared with auditory material in the left VLPFC may represent the tendency to use a phonological strategy. We found that the activation difference in the left VLPFC showed a significant positive correlation with memory ability but not with age, suggesting that children with high memory ability make more use of phonological strategy for pictures. The present study provides functional evidence that the strategy in short-term memory for pictures shifts gradually from non-phonological to phonological as memory ability increases in childhood. Copyright © 2010 Elsevier Inc. All rights reserved.

Rotational scanning and multiple-spot focusing through a multimode fiber based on digital optical phase conjugation

NASA Astrophysics Data System (ADS)

Ma, Chaojie; Di, Jianglei; Li, Ying; Xiao, Fajun; Zhang, Jiwei; Liu, Kaihui; Bai, Xuedong; Zhao, Jianlin

2018-06-01

We demonstrate, for the first time, the rotational memory effect of a multimode fiber (MMF) based on digital optical phase conjugation (DOPC) to achieve multiple-spot focusing. An implementation interferometer is used to address the challenging alignments in DOPC. By rotating the acquired phase conjugate pattern, rotational scanning through a MMF could be achieved by recording a single off-axis hologram. The generation of two focal spots through a MMF is also demonstrated by combining the rotational memory effect with the superposition principle. The results may be useful for ultrafast scanning imaging and optical manipulation of multiple objects through a MMF.

Highly-efficient quantum memory for polarization qubits in a spatially-multiplexed cold atomic ensemble.

PubMed

Vernaz-Gris, Pierre; Huang, Kun; Cao, Mingtao; Sheremet, Alexandra S; Laurat, Julien

2018-01-25

Quantum memory for flying optical qubits is a key enabler for a wide range of applications in quantum information. A critical figure of merit is the overall storage and retrieval efficiency. So far, despite the recent achievements of efficient memories for light pulses, the storage of qubits has suffered from limited efficiency. Here we report on a quantum memory for polarization qubits that combines an average conditional fidelity above 99% and efficiency around 68%, thereby demonstrating a reversible qubit mapping where more information is retrieved than lost. The qubits are encoded with weak coherent states at the single-photon level and the memory is based on electromagnetically-induced transparency in an elongated laser-cooled ensemble of cesium atoms, spatially multiplexed for dual-rail storage. This implementation preserves high optical depth on both rails, without compromise between multiplexing and storage efficiency. Our work provides an efficient node for future tests of quantum network functionalities and advanced photonic circuits.

Deficits in verbal long-term memory and learning in children with poor phonological short-term memory skills.

PubMed

Gathercole, Susan E; Briscoe, Josie; Thorn, Annabel; Tiffany, Claire

2008-03-01

Possible links between phonological short-term memory and both longer term memory and learning in 8-year-old children were investigated in this study. Performance on a range of tests of long-term memory and learning was compared for a group of 16 children with poor phonological short-term memory skills and a comparison group of children of the same age with matched nonverbal reasoning abilities but memory scores in the average range. The low-phonological-memory group were impaired on longer term memory and learning tasks that taxed memory for arbitrary verbal material such as names and nonwords. However, the two groups performed at comparable levels on tasks requiring the retention of visuo-spatial information and of meaningful material and at carrying out prospective memory tasks in which the children were asked to carry out actions at a future point in time. The results are consistent with the view that poor short-term memory function impairs the longer-term retention and ease of learning of novel verbal material.

Discrimination of enclosed images by weighted storage in an optical associative memory

NASA Astrophysics Data System (ADS)

Duelli, M.; Cudney, R. S.; Günter, P.

1996-02-01

We present an all-optical associative memory that can distinguish objects that are enclosed by or strongly overlap other objects. This is done by appropriately weighting the exposure of the stored images during recording. The images to be recalled associatively are stored in a photorefractive LiNbO 3 crystal via angular multiplexing. Thresholding of the reconstructed reference beams during associative readout is achieved by using a saturable absorber with an intensity tunable threshold.

Determining the Mechanical Properties of Lattice Block Structures

NASA Technical Reports Server (NTRS)

Wilmoth, Nathan

2013-01-01

Lattice block structures and shape memory alloys possess several traits ideal for solving intriguing new engineering problems in industries such as aerospace, military, and transportation. Recent testing at the NASA Glenn Research Center has investigated the material properties of lattice block structures cast from a conventional aerospace titanium alloy as well as lattice block structures cast from nickel-titanium shape memory alloy. The lattice block structures for both materials were sectioned into smaller subelements for tension and compression testing. The results from the cast conventional titanium material showed that the expected mechanical properties were maintained. The shape memory alloy material was found to be extremely brittle from the casting process and only compression testing was completed. Future shape memory alloy lattice block structures will utilize an adjusted material composition that will provide a better quality casting. The testing effort resulted in baseline mechanical property data from the conventional titanium material for comparison to shape memory alloy materials once suitable castings are available.

Optical decoherence studies of Tm3 +:Y3Ga5O12

NASA Astrophysics Data System (ADS)

Thiel, C. W.; Sinclair, N.; Tittel, W.; Cone, R. L.

2014-12-01

Decoherence of the 795 nm 3H6 to 3H4 transition in 1 %Tm3 +:Y3Ga5O12 (Tm:YGG) is studied at temperatures as low as 1.2 K. The temperature, magnetic field, frequency, and time scale (spectral diffusion) dependence of the optical coherence lifetime is measured. Our results show that the coherence lifetime is impacted less by spectral diffusion than other known thulium-doped materials. Photon echo excitation and spectral hole burning methods reveal uniform decoherence properties and the possibility to produce full transparency for persistent spectral holes across the entire 56 GHz inhomogeneous bandwidth of the optical transition. Temperature-dependent decoherence is well described by elastic Raman scattering of phonons with an additional weaker component that may arise from a low density of glass-like dynamic disorder modes (two-level systems). Analysis of the observed behavior suggests that an optical coherence lifetime approaching 1 ms may be possible in this system at temperatures below 1 K for crystals grown with optimized properties. Overall, we find that Tm:YGG has superior decoherence properties compared to other Tm-doped crystals and is a promising candidate for applications that rely on long coherence lifetimes, such as optical quantum memories and photonic signal processing.

Modified signed-digit trinary arithmetic by using optical symbolic substitution.

PubMed

Awwal, A A; Islam, M N; Karim, M A

1992-04-10

Carry-free addition and borrow-free subtraction of modified signed-digit trinary numbers with optical symbolic substitution are presented. The proposed two-step and three-step algorithms can be easily implemented by using phase-only holograms, optical content-addressable memories, a multichannel correlator, or a polarization-encoded optical shadow-casting system.

Modified signed-digit trinary arithmetic by using optical symbolic substitution

NASA Astrophysics Data System (ADS)

Awwal, A. A. S.; Islam, M. N.; Karim, M. A.

1992-04-01

Carry-free addition and borrow-free subtraction of modified signed-digit trinary numbers with optical symbolic substitution are presented. The proposed two-step and three-step algorithms can be easily implemented by using phase-only holograms, optical content-addressable memories, a multichannel correlator, or a polarization-encoded optical shadow-casting system.

[Cognitive disorders in patients with chronic mercury intoxication].

PubMed

Katamanova, E V; Shevchenko, O I; Lakhman, O L; Denisova, I A

2014-01-01

To assess severity of cognitive disorders in chronic mercury intoxication, the authors performed claster and discrimination analysis of neuropsychologic and neurophysiologic research data from workers exposed to mercury during long length of service, from patients with early and marked stages of chronic mercurial intoxication. Cognitive disorders in chronic mercurial intoxication have three severity degrees, in the light degree disorders patients demonstrate lower amplitude of cognitive evoked potentials, poor long-term memory and associative thinking. Moderate cognitive disorders are characterized by decreased visual, long-term memory, concentration of attention, poor optic and spatial gnosis. Marked cognitive disorders with chronic mercurial intoxication present with more decreased long-term, short-term, picturesque memory, poor intellect, optic and spatial gnosis and associative thinking.

Application of holographic optical techniques to bulk memory.

NASA Technical Reports Server (NTRS)

Anderson, L. K.

1971-01-01

Current efforts to exploit the spatial redundancy and built-in imaging of holographic optical techniques to provide high information densities without critical alignment and tight mechanical tolerances are reviewed. Read-write-erase in situ operation is possible but is presently impractical because of limitations in available recording media. As these are overcome, it should prove feasible to build holographic bulk memories with mechanically replaceable hologram plates featuring very fast (less than 2 microsec) random access to large (greater than 100 million bit) data blocks and very high throughput (greater than 500 Mbit/sec). Using volume holographic storage it may eventually be possible to realize random-access mass memories which require no mechanical motion and yet provide very high capacity.

The use of plastic optical fibres and shape memory alloys for damage assessment and damping control in composite materials

NASA Astrophysics Data System (ADS)

Kuang, K. S. C.; Cantwell, W. J.

2003-08-01

This paper reports the use of a plastic fibre sensor for detecting impact damage in carbon fibre epoxy cantilever beams by monitoring their damping response under free vibration loading conditions. The composite beams were impacted at impact energies up to 8 J. The residual strengths and stiffnesses of the damaged laminates were measured in order to relate reductions in their mechanical properties to changes in their damping characteristics. Here, optical fibre sensors were surface bonded to carbon fibre composite beams which were subjected to free vibration tests to monitor their dynamic response. In the second part of this study, Ni-Ti shape memory alloy (SMA) wires were employed to control and modify the damping response of a composite beam. The SMA wires were initially trained to obtain the desired shape when activated. Here, the trained SMA wires were heated locally using a nickel/chromium wire that was wrapped around the trained region of the SMA. By using this method to activate the SMA wire (as opposed to direct electrical heating), it is possible to obtain localized actuation without heating the entire length of the wire. This procedure minimizes any damage to the host material that may result from local heat transfer between the SMA wire and the composite structure. In addition, the reduction in power requirements to achieve SMA activation permits the use of small-size power packs which can in turn lead to a potential weight reduction in weight-critical applications. The findings of this study demonstrate that a trained SMA offers a superior damping capability to that exhibited by an 'as-supplied' flat-annealed wire.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons

NASA Astrophysics Data System (ADS)

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J.; Treutlein, Philipp

2017-08-01

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δ f =0.66 GHz , the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure ηe2 e 50 ns=3.4 (3 )% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency ηint=17 (3 )%. Straightforward technological improvements can boost the end-to-end-efficiency to ηe 2 e≈35 %; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9 ×10-3 photons is dominated by atomic fluorescence, and for input pulses containing on average μ1=0.27 (4 ) photons, the signal to noise level would be unity.

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

PubMed

Wolters, Janik; Buser, Gianni; Horsley, Andrew; Béguin, Lucas; Jöckel, Andreas; Jahn, Jan-Philipp; Warburton, Richard J; Treutlein, Philipp

2017-08-11

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

Olfactory Context-Dependent Memory and the Effects of Affective Congruency.

PubMed

Hackländer, Ryan P M; Bermeitinger, Christina

2017-10-31

Odors have been claimed to be particularly effective mnemonic cues, possibly because of the strong links between olfaction and emotion processing. Indeed, past research has shown that odors can bias processing towards affectively congruent material. In order to determine whether this processing bias translates to memory, we conducted 2 olfactory-enhanced-context memory experiments where we manipulated affective congruency between the olfactory context and to-be-remembered material. Given the presumed importance of valence to olfactory perception, we hypothesized that memory would be best for affectively congruent material in the olfactory enhanced context groups. Across the 2 experiments, groups which encoded and retrieved material in the presence of an odorant exhibited better memory performance than groups that did not have the added olfactory context during encoding and retrieval. While context-enhanced memory was exhibited in the presence of both pleasant and unpleasant odors, there was no indication that memory was dependent on affective congruency between the olfactory context and the to-be-remembered material. While the results provide further support for the notion that odors can act as powerful contextual mnemonic cues, they call into question the notion that affective congruency between context and focal material is important for later memory performance. © The Author 2017. Published by Oxford University Press. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Light-induced pyroelectric effect as an effective approach for ultrafast ultraviolet nanosensing

NASA Astrophysics Data System (ADS)

Wang, Zhaona; Yu, Ruomeng; Pan, Caofeng; Li, Zhaoling; Yang, Jin; Yi, Fang; Wang, Zhong Lin

2015-09-01

Zinc oxide is potentially a useful material for ultraviolet detectors; however, a relatively long response time hinders practical implementation. Here by designing and fabricating a self-powered ZnO/perovskite-heterostructured ultraviolet photodetector, the pyroelectric effect, induced in wurtzite ZnO nanowires on ultraviolet illumination, has been utilized as an effective approach for high-performance photon sensing. The response time is improved from 5.4 s to 53 μs at the rising edge, and 8.9 s to 63 μs at the falling edge, with an enhancement of five orders in magnitudes. The specific detectivity and the responsivity are both enhanced by 322%. This work provides a novel design to achieve ultrafast ultraviolet sensing at room temperature via light-self-induced pyroelectric effect. The newly designed ultrafast self-powered ultraviolet nanosensors may find promising applications in ultrafast optics, nonlinear optics, optothermal detections, computational memories and biocompatible optoelectronic probes.

Laser Shock Wave-Assisted Patterning on NiTi Shape Memory Alloy Surfaces

NASA Astrophysics Data System (ADS)

Ilhom, Saidjafarzoda; Seyitliyev, Dovletgeldi; Kholikov, Khomidkohodza; Thomas, Zachary; Er, Ali O.; Li, Peizhen; Karaca, Haluk E.; San, Omer

2018-01-01

Shape memory alloys (SMAs) are a unique class of smart materials and they were employed in various applications in engineering, biomedical, and aerospace technologies. Here, we report an advanced, efficient, and low-cost direct imprinting method with low environmental impact to create thermally controllable surface patterns. Patterned microindents were generated on Ni50Ti50 (at. %) SMAs using an Nd:YAG laser with 1064 nm wavelength at 10 Hz. Laser pulses at selected fluences were focused on the NiTi surface and generated pressure pulses of up to a few GPa. Optical microscope images showed that surface patterns with tailorable sizes can be obtained. The depth of the patterns increases with laser power and irradiation time. Upon heating, the depth profile of SMA surfaces changed where the maximum depth recovery ratio of 30% was observed. Recovery ratio decreased and stabilized when the number of pulses and thus the well depth were further increased. A numerical simulation of pressure evolution in shape memory alloys showed a good agreement with the experimental results. The stress wave closely followed the rise time of the laser pulse to its peak value and initial decay. Rapid attenuation and dispersion of the stress wave were found in our simulation.

Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

NASA Astrophysics Data System (ADS)

Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

2018-05-01

This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

Laser Shock Wave-Assisted Patterning on NiTi Shape Memory Alloy Surfaces

NASA Astrophysics Data System (ADS)

Ilhom, Saidjafarzoda; Seyitliyev, Dovletgeldi; Kholikov, Khomidkohodza; Thomas, Zachary; Er, Ali O.; Li, Peizhen; Karaca, Haluk E.; San, Omer

2018-03-01

Shape memory alloys (SMAs) are a unique class of smart materials and they were employed in various applications in engineering, biomedical, and aerospace technologies. Here, we report an advanced, efficient, and low-cost direct imprinting method with low environmental impact to create thermally controllable surface patterns. Patterned microindents were generated on Ni50Ti50 (at. %) SMAs using an Nd:YAG laser with 1064 nm wavelength at 10 Hz. Laser pulses at selected fluences were focused on the NiTi surface and generated pressure pulses of up to a few GPa. Optical microscope images showed that surface patterns with tailorable sizes can be obtained. The depth of the patterns increases with laser power and irradiation time. Upon heating, the depth profile of SMA surfaces changed where the maximum depth recovery ratio of 30% was observed. Recovery ratio decreased and stabilized when the number of pulses and thus the well depth were further increased. A numerical simulation of pressure evolution in shape memory alloys showed a good agreement with the experimental results. The stress wave closely followed the rise time of the laser pulse to its peak value and initial decay. Rapid attenuation and dispersion of the stress wave were found in our simulation.

Experimental realization of a multiplexed quantum memory with 225 individually accessible memory cells.

PubMed

Pu, Y-F; Jiang, N; Chang, W; Yang, H-X; Li, C; Duan, L-M

2017-05-08

To realize long-distance quantum communication and quantum network, it is required to have multiplexed quantum memory with many memory cells. Each memory cell needs to be individually addressable and independently accessible. Here we report an experiment that realizes a multiplexed DLCZ-type quantum memory with 225 individually accessible memory cells in a macroscopic atomic ensemble. As a key element for quantum repeaters, we demonstrate that entanglement with flying optical qubits can be stored into any neighboring memory cells and read out after a programmable time with high fidelity. Experimental realization of a multiplexed quantum memory with many individually accessible memory cells and programmable control of its addressing and readout makes an important step for its application in quantum information technology.

Research on phase locked loop in optical memory servo system

NASA Astrophysics Data System (ADS)

Qin, Liqin; Ma, Jianshe; Zhang, Jianyong; Pan, Longfa; Deng, Ming

2005-09-01

Phase locked loop (PLL) is a closed loop automatic control system, which can track the phase of input signal. It widely applies in each area of electronic technology. This paper research the phase locked loop in optical memory servo area. This paper introduces the configuration of digital phase locked loop (PLL) and phase locked servo system, the control theory, and analyses system's stability. It constructs the phase locked loop experiment system of optical disk spindle servo, which based on special chip. DC motor is main object, this system adopted phase locked servo technique and digital signal processor (DSP) to achieve constant linear velocity (CLV) in controlling optical spindle motor. This paper analyses the factors that affect the stability of phase locked loop in spindle servo system, and discusses the affection to the optical disk readout signal and jitter due to the stability of phase locked loop.

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veis, M., E-mail: veis@karlov.mff.cuni.cz; Beran, L.; Zahradnik, M.

2014-05-07

Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323 K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4 eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significantmore » spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.« less

On the Susceptibility of Adaptive Memory to False Memory Illusions

ERIC Educational Resources Information Center

Howe, Mark L.; Derbish, Mary H.

2010-01-01

Previous research has shown that survival-related processing of word lists enhances retention for that material. However, the claim that survival-related memories are more accurate has only been examined when true recall and recognition of neutral material has been measured. In the current experiments, we examined the adaptive memory superiority…

Musicians' Memory for Verbal and Tonal Materials under Conditions of Irrelevant Sound

ERIC Educational Resources Information Center

Williamson, Victoria J.; Mitchell, Tom; Hitch, Graham J.; Baddeley, Alan D.

2010-01-01

Studying short-term memory within the framework of the working memory model and its associated paradigms (Baddeley, 2000; Baddeley & Hitch, 1974) offers the chance to compare similarities and differences between the way that verbal and tonal materials are processed. This study examined amateur musicians' short-term memory using a newly adapted…

Fabrication and characterization of micromachined dielectric thin films and temperature sensors using thermoluminescence

NASA Astrophysics Data System (ADS)

Kim, Sangho Sam

High-power laser technology has a number of applications, whether for the military (i.e., anti-missile weaponry) or for material processing, medical surgery, laser-induced nuclear fusion, and high-density data storage. However, external obstacles could cause a laser to problematically change its direction. Optical components such as mirrors already address this problem by deflecting a laser beam, but can be damaged easily due to the intensity of the laser. Therefore, this dissertation examines how to improve reliability of high power laser application systems by three significant standards. First, we demonstrate that an atomic layer deposition (ALD) of Al2O3 can stabilize novel dielectric optical mirrors composed of SiO2 nanorods, whose porosity makes it attractive for use as a low refractive index material. Such a deposition can stabilize material properties in dry versus humid atmospheres, where both the refractive index and coefficient of thermal expansion (CTE) vary dramatically. This encapsulation ability is demonstrated in dielectric multilayers as a Distributed Bragg Reflector (DBR). Second, we show that the difference in hydroxyl signatures of micromachined dielectric membranes can make detection of optical materials' laser damage more accurate. This signature difference, appearing as the decrease in post-laser absorption peaks associated with hydroxyl groups (OH), is measured by Fourier transform infrared spectroscopy and corresponds to regions of high fluence from a Nd:YAG laser. This detection technique will be useful to determine the lifespan of the optical components used in a high power laser. Third, we find that heterogeneous thermoluminescent (TL) multilayers composed of LiF:Mg,Ti and CaF2:Dy with Kapton as an interlayer can enhance reconstruction of laser heating events through thermal gradients that penetrate deep into a material, thereby preserving memory of the temperature history of the surface. Using the finite-difference time-domain method (FDTD) and the first order kinetics model of TL, we estimate dynamic heat transfer and then populate the final luminescent intensity. A thermal contact conductance between the critical layers is also introduced to better simulate experimental results, thereby resolving dynamic temperatures by hundreds of milliseconds.

Biodegradable Shape Memory Polymers in Medicine.

PubMed

Peterson, Gregory I; Dobrynin, Andrey V; Becker, Matthew L

2017-11-01

Shape memory materials have emerged as an important class of materials in medicine due to their ability to change shape in response to a specific stimulus, enabling the simplification of medical procedures, use of minimally invasive techniques, and access to new treatment modalities. Shape memory polymers, in particular, are well suited for such applications given their excellent shape memory performance, tunable materials properties, minimal toxicity, and potential for biodegradation and resorption. This review provides an overview of biodegradable shape memory polymers that have been used in medical applications. The majority of biodegradable shape memory polymers are based on thermally responsive polyesters or polymers that contain hydrolyzable ester linkages. These materials have been targeted for use in applications pertaining to embolization, drug delivery, stents, tissue engineering, and wound closure. The development of biodegradable shape memory polymers with unique properties or responsiveness to novel stimuli has the potential to facilitate the optimization and development of new medical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gradient Echo Quantum Memory in Warm Atomic Vapor

PubMed Central

Pinel, Olivier; Hosseini, Mahdi; Sparkes, Ben M.; Everett, Jesse L.; Higginbottom, Daniel; Campbell, Geoff T.; Lam, Ping Koy; Buchler, Ben C.

2013-01-01

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain. PMID:24300586

Gradient echo quantum memory in warm atomic vapor.

PubMed

Pinel, Olivier; Hosseini, Mahdi; Sparkes, Ben M; Everett, Jesse L; Higginbottom, Daniel; Campbell, Geoff T; Lam, Ping Koy; Buchler, Ben C

2013-11-11

Gradient echo memory (GEM) is a protocol for storing optical quantum states of light in atomic ensembles. The primary motivation for such a technology is that quantum key distribution (QKD), which uses Heisenberg uncertainty to guarantee security of cryptographic keys, is limited in transmission distance. The development of a quantum repeater is a possible path to extend QKD range, but a repeater will need a quantum memory. In our experiments we use a gas of rubidium 87 vapor that is contained in a warm gas cell. This makes the scheme particularly simple. It is also a highly versatile scheme that enables in-memory refinement of the stored state, such as frequency shifting and bandwidth manipulation. The basis of the GEM protocol is to absorb the light into an ensemble of atoms that has been prepared in a magnetic field gradient. The reversal of this gradient leads to rephasing of the atomic polarization and thus recall of the stored optical state. We will outline how we prepare the atoms and this gradient and also describe some of the pitfalls that need to be avoided, in particular four-wave mixing, which can give rise to optical gain.

High-speed reference-beam-angle control technique for holographic memory drive

NASA Astrophysics Data System (ADS)

Yamada, Ken-ichiro; Ogata, Takeshi; Hosaka, Makoto; Fujita, Koji; Okuyama, Atsushi

2016-09-01

We developed a holographic memory drive for next-generation optical memory. In this study, we present the key technology for achieving a high-speed transfer rate for reproduction, that is, a high-speed control technique for the reference beam angle. In reproduction in a holographic memory drive, there is the issue that the optimum reference beam angle during reproduction varies owing to distortion of the medium. The distortion is caused by, for example, temperature variation, beam irradiation, and moisture absorption. Therefore, a reference-beam-angle control technique to position the reference beam at the optimum angle is crucial. We developed a new optical system that generates an angle-error-signal to detect the optimum reference beam angle. To achieve the high-speed control technique using the new optical system, we developed a new control technique called adaptive final-state control (AFSC) that adds a second control input to the first one derived from conventional final-state control (FSC) at the time of angle-error-signal detection. We established an actual experimental system employing AFSC to achieve moving control between each page (Page Seek) within 300 µs. In sequential multiple Page Seeks, we were able to realize positioning to the optimum angles of the reference beam that maximize the diffracted beam intensity. We expect that applying the new control technique to the holographic memory drive will enable a giga-bit/s-class transfer rate.

One-Way Multishape-Memory Effect and Tunable Two-Way Shape Memory Effect of Ionomer Poly(ethylene-co-methacrylic acid).

PubMed

Lu, Lu; Li, Guoqiang

2016-06-15

Reversible elongation by cooling and contraction by heating, without the need for repeated programming, is well-known as the two-way shape-memory effect (2W-SME). This behavior is contrary to the common physics-contraction when cooling and expansion when heating. Materials with such behavior may find many applications in real life, such as self-sufficient grippers, fastening devices, optical gratings, soft actuators, and sealant. Here, it is shown that ionomer Surlyn 8940, a 50-year old polymer, exhibits both one-way multishape-memory effects and tunable two-way reversible actuation. The required external tensile stress to trigger the tunable 2W-SME is very low when randomly jumping the temperatures within the melting transition window. With a proper one-time programming, "true" 2W-SME (i.e., 2W-SME without the need for an external tensile load) is also achieved. A long training process is not needed to trigger the tunable 2W-SME. Instead, a proper one-time tensile programming is sufficient to trigger repeated and tunable 2W-SME. Because the 2W-SME of the ionomer Surlyn is driven by the thermally reversible network, here crystallization and melting transitions of the semicrystalline poly(ethylene-co-methacrylic acid), it is believed that a class of thermally reversible polymers should also exhibit tunable 2W-SMEs.

Maximizing Computational Capability with Minimal Power

DTIC Science & Technology

2009-03-01

Chip -Scale Energy and Power... and Heat Report Documentation Page Form ApprovedOMB No. 0704-0188 Public reporting burden for the collection of...OpticalBench Mounting Posts Imager Chip LCDinterfaced withthecomputer P o l a r i z e r P o l a r i z e r XYZ Translator Optical Slide VMM Computational Pixel...Signal routing power / memory: ? Power does not include comm off chip (i.e. accessing memory) Power = ½ C Vdd2 f for CMOS Chip to Chip (10pF load min

Nickel porphyrins for memory optical applications

DOEpatents

Shelnutt, John A.; Jia, Songling; Medforth, Craig; Holten, Dewey; Nelson, Nora Y.; Smith, Kevin M.

2000-01-01

The present invention relates to a nickel-porphyrin derivative in a matrix, the nickel-porphyrin derivative comprising at least two conformational isomers, a lower-energy-state conformer and a higher-energy-state conformer, such that when the higher-energy-state conformer is generated from the lower-energy-state conformer following absorption of a photon of suitable energy, the time to return to the lower-energy-state conformer is greater than 40 nanoseconds at approximately room temperature. The nickel-porphyrin derivative is useful in optical memory applications.

Quantum memory on a charge qubit in an optical microresonator

NASA Astrophysics Data System (ADS)

Tsukanov, A. V.

2017-10-01

A quantum-memory unit scheme on the base of a semiconductor structure with quantum dots is proposed. The unit includes a microresonator with single and double quantum dots performing frequencyconverter and charge-qubit functions, respectively. The writing process is carried out in several stages and it is controlled by optical fields of the resonator and laser. It is shown that, to achieve high writing probability, it is necessary to use high-Q resonators and to be able to suppress relaxation processes in quantum dots.

High Storage Efficiency and Large Fractional Delay of EIT-Based Memory

NASA Astrophysics Data System (ADS)

Chen, Yi-Hsin; Lee, Meng-Jung; Wang, I.-Chung; Du, Shengwang; Chen, Yong-Fan; Chen, Ying-Cheng; Yu, Ite

2013-05-01

In long-distance quantum communication and optical quantum computation, an efficient and long-lived quantum memory is an important component. We first experimentally demonstrated that a time-space-reversing method plus the optimum pulse shape can improve the storage efficiency (SE) of light pulses to 78% in cold media based on the effect of electromagnetically induced transparency (EIT). We obtain a large fractional delay of 74 at 50% SE, which is the best record so far. The measured classical fidelity of the recalled pulse is higher than 90% and nearly independent of the storage time, implying that the optical memory maintains excellent phase coherence. Our results suggest the current result may be readily applied to single-photon quantum states due to quantum nature of the EIT light-matter inference. This study advances the EIT-based quantum memory in practical quantum information applications.

Quantum storage of entangled telecom-wavelength photons in an erbium-doped optical fibre

NASA Astrophysics Data System (ADS)

Saglamyurek, Erhan; Jin, Jeongwan; Verma, Varun B.; Shaw, Matthew D.; Marsili, Francesco; Nam, Sae Woo; Oblak, Daniel; Tittel, Wolfgang

2015-02-01

The realization of a future quantum Internet requires the processing and storage of quantum information at local nodes and interconnecting distant nodes using free-space and fibre-optic links. Quantum memories for light are key elements of such quantum networks. However, to date, neither an atomic quantum memory for non-classical states of light operating at a wavelength compatible with standard telecom fibre infrastructure, nor a fibre-based implementation of a quantum memory, has been reported. Here, we demonstrate the storage and faithful recall of the state of a 1,532 nm wavelength photon entangled with a 795 nm photon, in an ensemble of cryogenically cooled erbium ions doped into a 20-m-long silica fibre, using a photon-echo quantum memory protocol. Despite its currently limited efficiency and storage time, our broadband light-matter interface brings fibre-based quantum networks one step closer to reality.

Broadband multiresonator quantum memory-interface.

PubMed

Moiseev, S A; Gerasimov, K I; Latypov, R R; Perminov, N S; Petrovnin, K V; Sherstyukov, O N

2018-03-05

In this paper we experimentally demonstrated a broadband scheme of the multiresonator quantum memory-interface. The microwave photonic scheme consists of the system of mini-resonators strongly interacting with a common broadband resonator coupled with the external waveguide. We have implemented the impedance matched quantum storage in this scheme via controllable tuning of the mini-resonator frequencies and coupling of the common resonator with the external waveguide. Proof-of-principal experiment has been demonstrated for broadband microwave pulses when the quantum efficiency of 16.3% was achieved at room temperature. By using the obtained experimental spectroscopic data, the dynamics of the signal retrieval has been simulated and promising results were found for high-Q mini-resonators in microwave and optical frequency ranges. The results pave the way for the experimental implementation of broadband quantum memory-interface with quite high efficiency η > 0.99 on the basis of modern technologies, including optical quantum memory at room temperature.

A multiplexed quantum memory.

PubMed

Lan, S-Y; Radnaev, A G; Collins, O A; Matsukevich, D N; Kennedy, T A; Kuzmich, A

2009-08-03

A quantum repeater is a system for long-distance quantum communication that employs quantum memory elements to mitigate optical fiber transmission losses. The multiplexed quantum memory (O. A. Collins, S. D. Jenkins, A. Kuzmich, and T. A. B. Kennedy, Phys. Rev. Lett. 98, 060502 (2007)) has been shown theoretically to reduce quantum memory time requirements. We present an initial implementation of a multiplexed quantum memory element in a cold rubidium gas. We show that it is possible to create atomic excitations in arbitrary memory element pairs and demonstrate the violation of Bell's inequality for light fields generated during the write and read processes.

Quantum random access memory.

PubMed

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2008-04-25

A random access memory (RAM) uses n bits to randomly address N=2(n) distinct memory cells. A quantum random access memory (QRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that exponentially reduces the requirements for a memory call: O(logN) switches need be thrown instead of the N used in conventional (classical or quantum) RAM designs. This yields a more robust QRAM algorithm, as it in general requires entanglement among exponentially less gates, and leads to an exponential decrease in the power needed for addressing. A quantum optical implementation is presented.

Optical Pattern Recognition With Self-Amplification

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang

1994-01-01

In optical pattern recognition system with self-amplification, no reference beam used in addressing mode. Polarization of laser beam and orientation of photorefractive crystal chosen to maximize photorefractive effect. Intensity of recognition signal is orders of magnitude greater than other optical correlators. Apparatus regarded as real-time or quasi-real-time optical pattern recognizer with memory and reprogrammability.

Two-Color Single-Photon Photoinitiation and Photoinhibition for Subdiffraction Photolithography

NASA Astrophysics Data System (ADS)

Scott, Timothy F.; Kowalski, Benjamin A.; Sullivan, Amy C.; Bowman, Christopher N.; McLeod, Robert R.

2009-05-01

Controlling and reducing the developed region initiated by photoexposure is one of the fundamental goals of optical lithography. Here, we demonstrate a two-color irradiation scheme whereby initiating species are generated by single-photon absorption at one wavelength while inhibiting species are generated by single-photon absorption at a second, independent wavelength. Co-irradiation at the second wavelength thus reduces the polymerization rate, delaying gelation of the material and facilitating enhanced spatial control over the polymerization. Appropriate overlapping of the two beams produces structures with both feature sizes and monomer conversions otherwise unobtainable with use of single- or two-photon absorption photopolymerization. Additionally, the generated inhibiting species rapidly recombine when irradiation with the second wavelength ceases, allowing for fast sequential exposures not limited by memory effects in the material and thus enabling fabrication of complex two- or three-dimensional structures.

Pushing typists back on the learning curve: Memory chunking improves retrieval of prior typing episodes.

PubMed

Yamaguchi, Motonori; Randle, James M; Wilson, Thomas L; Logan, Gordon D

2017-09-01

Hierarchical control of skilled performance depends on chunking of several lower-level units into a single higher-level unit. The present study examined the relationship between chunking and recognition of trained materials in the context of typewriting. In 3 experiments, participants were trained with typing nonwords and were later tested on their recognition of the trained materials. In Experiment 1, participants typed the same words or nonwords in 5 consecutive trials while performing a concurrent memory task. In Experiment 2, participants typed the materials with lags between repetitions without a concurrent memory task. In both experiments, recognition of typing materials was associated with better chunking of the materials. Experiment 3 used the remember-know procedure to test the recollection and familiarity components of recognition. Remember judgments were associated with better chunking than know judgments or nonrecognition. These results indicate that chunking is associated with explicit recollection of prior typing episodes. The relevance of the existing memory models to chunking in typewriting was considered, and it is proposed that memory chunking improves retrieval of trained typing materials by integrating contextual cues into the memory traces. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Shape Memory Polyurethane Materials Containing Ferromagnetic Iron Oxide and Graphene Nanoplatelets

PubMed Central

Urban, Magdalena

2017-01-01

Intelligent materials, such as memory shape polymers, have attracted considerable attention due to wide range of possible applications. Currently, intensive research is underway, in matters of obtaining memory shape materials that can be actuated via inductive methods, for example with help of magnetic field. In this work, an attempt was made to develop a new polymer composite—polyurethane modified with graphene nanoplates and ferromagnetic iron oxides—with improved mechanical properties and introduced magnetic and memory shape properties. Based on the conducted literature review, gathered data were compared to the results of similar materials. Obtained materials were tested for their thermal, rheological, mechanical and shape memory properties. Structure of both fillers and composites were also analyzed using various spectroscopic methods. The addition of fillers to the polyurethane matrix improved the mechanical and shape memory properties, without having a noticeable impact on thermal properties. As it was expected, the high content of fillers caused a significant change in viscosity of filled prepolymers (during the synthesis stage). Each of the studied composites showed better mechanical properties than the unmodified polyurethanes. The addition of magnetic particles introduced additional properties to the composite, which could significantly expand the functionality of the materials developed in this work. PMID:28906445

Shape Memory Polyurethane Materials Containing Ferromagnetic Iron Oxide and Graphene Nanoplatelets.

PubMed

Urban, Magdalena; Strankowski, Michał

2017-09-14

Intelligent materials, such as memory shape polymers, have attracted considerable attention due to wide range of possible applications. Currently, intensive research is underway, in matters of obtaining memory shape materials that can be actuated via inductive methods, for example with help of magnetic field. In this work, an attempt was made to develop a new polymer composite-polyurethane modified with graphene nanoplates and ferromagnetic iron oxides-with improved mechanical properties and introduced magnetic and memory shape properties. Based on the conducted literature review, gathered data were compared to the results of similar materials. Obtained materials were tested for their thermal, rheological, mechanical and shape memory properties. Structure of both fillers and composites were also analyzed using various spectroscopic methods. The addition of fillers to the polyurethane matrix improved the mechanical and shape memory properties, without having a noticeable impact on thermal properties. As it was expected, the high content of fillers caused a significant change in viscosity of filled prepolymers (during the synthesis stage). Each of the studied composites showed better mechanical properties than the unmodified polyurethanes. The addition of magnetic particles introduced additional properties to the composite, which could significantly expand the functionality of the materials developed in this work.

Similar prefrontal cortical activities between general fluid intelligence and visuospatial working memory tasks in preschool children as revealed by optical topography.

PubMed

Kuwajima, Mariko; Sawaguchi, Toshiyuki

2010-10-01

General fluid intelligence (gF) is a major component of intellect in both adults and children. Whereas its neural substrates have been studied relatively thoroughly in adults, those are poorly understood in children, particularly preschoolers. Here, we hypothesized that gF and visuospatial working memory share a common neural system within the lateral prefrontal cortex (LPFC) during the preschool years (4-6 years). At the behavioral level, we found that gF positively and significantly correlated with abilities (especially accuracy) in visuospatial working memory. Optical topography revealed that the LPFC of preschoolers was activated and deactivated during the visuospatial working memory task and the gF task. We found that the spatio-temporal features of neural activity in the LPFC were similar for both the visuospatial working memory task and the gF task. Further, 2 months of training for the visuospatial working memory task significantly increased gF in the preschoolers. These findings suggest that a common neural system in the LPFC is recruited to improve the visuospatial working memory and gF in preschoolers. Efficient recruitment of this neural system may be important for good performance in these functions in preschoolers, and behavioral training using this system would help to increase gF at these ages.

Magneto-optical Kerr effect of a Ni2.00Mn1.16Ga0.84 single crystal across austenite and intermartensite transitions

NASA Astrophysics Data System (ADS)

Fikáček, Jan; Heczko, Oleg; Kopecký, Vít; Kaštil, Jiří; Honolka, Jan

2018-04-01

We carried out magneto-optical Kerr effect (MOKE) and magnetization measurements on a single crystal of Ni2.00Mn1.16Ga0.84, which is a magnetic shape memory material with application potential for actuator devices or for energy recuperation. Up to the time of our study, there had been reports of MOKE measurements in polar geometry. Against earlier predictions, we show that surface magnetic states of the martensite and the austenite can be also probed efficiently via longitudinal MOKE. A single-variant magnetic state prepared at room temperature is characterized by square-shaped ferromagnetic hysteresis loops yielding coercive fields, which are key material properties for future applications. Temperature dependencies of Kerr rotation were found to be linearly proportional to magnetization for martensitic phases. After passing through an inter-martensitic structural transition below room temperature in zero magnetic field, the coercive fields are more than doubled in comparison with the room temperature values. Above room temperature where an austenite structure is formed, MOKE signals are dominated by quadratic contributions and the magnitude of Kerr rotation drops due to changes in the electronic and magnetic domains structure.

Optical anisotropy and domain structure of multiferroic Ni-Mn-Ga and Co-Ni-Ga Heusler-type alloys

NASA Astrophysics Data System (ADS)

Ivanova, A. I.; Gasanov, O. V.; Kaplunova, E. I.; Kalimullina, E. T.; Zalyotov, A. B.; Grechishkin, R. M.

2015-03-01

A study is made of the reflectance anisotropy of martensitic and magnetic domains in ferromagnetic shape memory alloys (FSMA) Ni-Mn-Ga and Co-Ni-Ga. The reflectance of metallographic sections of these alloys was measured in the visible with the aid of standard inverted polarized light microscope with a 360° rotatable specimen stage. Calculations are presented for the estimation of image contrast values between neighboring martensite twins. Qualitative and quantitative observations and angular measurements in reflected polarized light proved to be useful for the analysis of specific features of the martensite microstructure of multiferroic materials.

Experimental realization of a multiplexed quantum memory with 225 individually accessible memory cells

PubMed Central

Pu, Y-F; Jiang, N.; Chang, W.; Yang, H-X; Li, C.; Duan, L-M

2017-01-01

To realize long-distance quantum communication and quantum network, it is required to have multiplexed quantum memory with many memory cells. Each memory cell needs to be individually addressable and independently accessible. Here we report an experiment that realizes a multiplexed DLCZ-type quantum memory with 225 individually accessible memory cells in a macroscopic atomic ensemble. As a key element for quantum repeaters, we demonstrate that entanglement with flying optical qubits can be stored into any neighboring memory cells and read out after a programmable time with high fidelity. Experimental realization of a multiplexed quantum memory with many individually accessible memory cells and programmable control of its addressing and readout makes an important step for its application in quantum information technology. PMID:28480891

A direct reading exposure monitor for radiation processing

NASA Astrophysics Data System (ADS)

Kantz, A. D.; Humpherys, K. C.

Various plastic films have been utilized to measure radiation fields. In general such films are rugged, easily handled, small enough to cause neligible perturbation on the radiation fields, and relatively inexpensive. The radiachromic materials have been shown to have advantages over other plastic fabrications in stability, reproducibility, equivalent response to electron and gamma ray processing fields, dose rate independence, and ready availability of calibration standards. Using a nylon matrix radiachromic detector, a system of direct read-out of absorbed dose has been developed to facilitate monitoring in the megarad region. When an exposed detector is inserted into the reader, the optical transmission signal is processed through an analog to digital converter. The digitized signal addresses a memory bank where the standard response curve is stored. The corresponding absorbed dose is displayed on a digital panel meter. The variation of relative sensitivity of detectors, the background of unirradiated detectors, environmental parameters, and the capacity of the memory bank are contributing factors to the total precision of the read-out system.

Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations.

PubMed

Sosso, Gabriele C; Miceli, Giacomo; Caravati, Sebastiano; Giberti, Federico; Behler, Jörg; Bernasconi, Marco

2013-12-19

Phase change materials are of great interest as active layers in rewritable optical disks and novel electronic nonvolatile memories. These applications rest on a fast and reversible transformation between the amorphous and crystalline phases upon heating, taking place on the nanosecond time scale. In this work, we investigate the microscopic origin of the fast crystallization process by means of large-scale molecular dynamics simulations of the phase change compound GeTe. To this end, we use an interatomic potential generated from a Neural Network fitting of a large database of ab initio energies. We demonstrate that in the temperature range of the programming protocols of the electronic memories (500-700 K), nucleation of the crystal in the supercooled liquid is not rate-limiting. In this temperature range, the growth of supercritical nuclei is very fast because of a large atomic mobility, which is, in turn, the consequence of the high fragility of the supercooled liquid and the associated breakdown of the Stokes-Einstein relation between viscosity and diffusivity.

Multipulse addressing of a Raman quantum memory: configurable beam splitting and efficient readout.

PubMed

Reim, K F; Nunn, J; Jin, X-M; Michelberger, P S; Champion, T F M; England, D G; Lee, K C; Kolthammer, W S; Langford, N K; Walmsley, I A

2012-06-29

Quantum memories are vital to the scalability of photonic quantum information processing (PQIP), since the storage of photons enables repeat-until-success strategies. On the other hand, the key element of all PQIP architectures is the beam splitter, which allows us to coherently couple optical modes. Here, we show how to combine these crucial functionalities by addressing a Raman quantum memory with multiple control pulses. The result is a coherent optical storage device with an extremely large time bandwidth product, that functions as an array of dynamically configurable beam splitters, and that can be read out with arbitrarily high efficiency. Networks of such devices would allow fully scalable PQIP, with applications in quantum computation, long distance quantum communications and quantum metrology.

All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

NASA Astrophysics Data System (ADS)

Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

2016-03-01

At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

Large conditional single-photon cross-phase modulation

NASA Astrophysics Data System (ADS)

Beck, Kristin; Hosseini, Mahdi; Duan, Yiheng; Vuletic, Vladan

2016-05-01

Deterministic optical quantum logic requires a nonlinear quantum process that alters the phase of a quantum optical state by π through interaction with only one photon. Here, we demonstrate a large conditional cross-phase modulation between a signal field, stored inside an atomic quantum memory, and a control photon that traverses a high-finesse optical cavity containing the atomic memory. This approach avoids fundamental limitations associated with multimode effects for traveling optical photons. We measure a conditional cross-phase shift of up to π / 3 between the retrieved signal and control photons, and confirm deterministic entanglement between the signal and control modes by extracting a positive concurrence. With a moderate improvement in cavity finesse, our system can reach a coherent phase shift of p at low loss, enabling deterministic and universal photonic quantum logic. Preprint: arXiv:1512.02166 [quant-ph

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

NASA Astrophysics Data System (ADS)

Gale, Ella

2014-10-01

The memristor is the fundamental nonlinear circuit element, with uses in computing and computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarize the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilized and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.

Holographic data storage crystals for LDEF (A0044)

NASA Technical Reports Server (NTRS)

Callen, W. R.; Gaylord, T. K.

1984-01-01

Electro-optic holographic recording systems were developed. The spaceworthiness of electro-optic crystals for use in ultrahigh capacity space data storage and retrieval systems are examined. The crystals for this experiment are included with the various electro-optical components of LDEF experiment. The effects of long-duration exposure on active optical system components is investigated. The concept of data storage in an optical-phase holographic memory is illustrated.

A motionless actuation system for magnetic shape memory devices

NASA Astrophysics Data System (ADS)

Armstrong, Andrew; Finn, Kevin; Hobza, Anthony; Lindquist, Paul; Rafla, Nader; Müllner, Peter

2017-10-01

Ni-Mn-Ga is a Magnetic Shape Memory (MSM) alloy that changes shape in response to a variable magnetic field. We can intentionally manipulate the shape of the material to function as an actuator, and the material can thus replace complicated small electromechanical systems. In previous work, a very simple and precise solid-state micropump was developed, but a mechanical rotation was required to translate the position of the magnetic field. This mechanical rotation defeats the purpose of the motionless solid-state device. Here we present a solid-state electromagnetic driver to linearly progress the position of the applied magnetic field and the associated shrinkage. The generated magnetic field was focused at either of two pole pieces, providing a mechanism for moving the localized shrinkage in the MSM element. We confirmed that our driver has sufficient strength to actuate the MSM element using optical microscopy. We validated the whole design by comparing results obtained with finite element analysis with the experimentally measured flux density. This drive system serves as a possible replacement to the mechanical rotation of the magnetic field by using a multi-pole electromagnet that sweeps the magnetic field across the MSM micropump element, solid-state switching the current to each pole piece in the multi-pole electromagnet.

Effects of natural enrichment materials on stress, memory and exploratory behavior in mice.

PubMed

Acklin, Casey J; Gault, Ruth A

2015-07-01

Environmental enrichment is an essential component of laboratory animal housing that allows animals to engage in natural behaviors in an otherwise artificial setting. Previous research by the authors suggested that, compared with synthetic enrichment materials, natural materials were associated with lower stress levels in mice. Here, the authors compare the effects of different enrichment materials on stress, memory and exploratory behavior in Swiss Webster mice. Mice that were provided with natural enrichment materials had lower stress levels, better memory and greater exploratory behavior than did mice provided with synthetic enrichment materials or with no enrichment materials. These findings suggest that provision of natural enrichment materials can improve well-being of laboratory mice.

Working memory capacity predicts listwise directed forgetting in adults and children.

PubMed

Aslan, Alp; Zellner, Martina; Bäuml, Karl-Heinz T

2010-05-01

In listwise directed forgetting, participants are cued to forget previously studied material and to learn new material instead. Such cueing typically leads to forgetting of the first set of material and to memory enhancement of the second. The present study examined the role of working memory capacity in adults' and children's listwise directed forgetting. Working memory capacity was assessed with complex span tasks. In Experiment 1 working memory capacity predicted young adults' directed-forgetting performance, demonstrating a positive relationship between working memory capacity and each of the two directed-forgetting effects. In Experiment 2 we replicated the finding with a sample of first and a sample of fourth-grade children, and additionally showed that working memory capacity can account for age-related increases in directed-forgetting efficiency between the two age groups. Following the view that directed forgetting is mediated by inhibition of the first encoded list, the results support the proposal of a close link between working memory capacity and inhibitory function.

Working memory, long-term memory, and medial temporal lobe function

PubMed Central

Jeneson, Annette; Squire, Larry R.

2012-01-01

Early studies of memory-impaired patients with medial temporal lobe (MTL) damage led to the view that the hippocampus and related MTL structures are involved in the formation of long-term memory and that immediate memory and working memory are independent of these structures. This traditional idea has recently been revisited. Impaired performance in patients with MTL lesions on tasks with short retention intervals, or no retention interval, and neuroimaging findings with similar tasks have been interpreted to mean that the MTL is sometimes needed for working memory and possibly even for visual perception itself. We present a reappraisal of this interpretation. Our main conclusion is that, if the material to be learned exceeds working memory capacity, if the material is difficult to rehearse, or if attention is diverted, performance depends on long-term memory even when the retention interval is brief. This fundamental notion is better captured by the terms subspan memory and supraspan memory than by the terms short-term memory and long-term memory. We propose methods for determining when performance on short-delay tasks must depend on long-term (supraspan) memory and suggest that MTL lesions impair performance only when immediate memory and working memory are insufficient to support performance. In neuroimaging studies, MTL activity during encoding is influenced by the memory load and correlates positively with long-term retention of the material that was presented. The most parsimonious and consistent interpretation of all the data is that subspan memoranda are supported by immediate memory and working memory and are independent of the MTL. PMID:22180053

CMOS compatible electrode materials selection in oxide-based memory devices

NASA Astrophysics Data System (ADS)

Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

2016-07-01

Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

Structurally Integrated Versus Structurally Segregated Memory Representations: Implications for the Design of Instructional Materials.

ERIC Educational Resources Information Center

Hayes-Roth, Barbara

Two kinds of memory organization are distinguished: segregrated versus integrated. In segregated memory organizations, related learned propositions have separate memory representations. In integrated memory organizations, memory representations of related propositions share common subrepresentations. Segregated memory organizations facilitate…

Quantum memory Quantum memory

NASA Astrophysics Data System (ADS)

Le Gouët, Jean-Louis; Moiseev, Sergey

2012-06-01

Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The quest for higher efficiency, better fidelity, broader bandwidth, multimode capacity and longer storage lifetime is pursued in all those approaches, as shown in this special issue. The improvement of quantum memory operation specifically requires in-depth study and control of numerous physical processes leading to atomic decoherence. The present issue reflects the development of rare earth ion doped matrices offering long lifetime superposition states, either as bulk crystals or as optical waveguides. The need for quantum sources and high efficiency detectors at the single photon level is also illustrated. Several papers address the networking of quantum memories either in long-haul cryptography or in the prospect of quantum processing. In this context, much attention has been paid recently to interfacing quantum light with superconducting qubits and with nitrogen-vacancy centers in diamond. Finally, the quantum interfacing of light with matter raises questions on entanglement. The last two papers are devoted to the generation of entanglement by dissipative processes. It is shown that long lifetime entanglement may be built in this way. We hope this special issue will help readers to become familiar with the exciting field of ensemble-based quantum memories and will stimulate them to bring deeper insights and new ideas to this area.

Therapeutic affect reduction, emotion regulation, and emotional memory reconsolidation: A neuroscientific quandary.

PubMed

LaBar, Kevin S

2015-01-01

Lane et al. emphasize the role of emotional arousal as a precipitating factor for successful psychotherapy. However, as therapy ensues, the arousal diminishes. How can the unfolding therapeutic process generate long-term memories for reconsolidated emotional material without the benefit of arousal? Studies investigating memory for emotionally regulated material provide some clues regarding the neural pathways that may underlie therapy-based memory reconsolidation.

Are the memories of older adults positively biased?

PubMed

Fernandes, Myra; Ross, Michael; Wiegand, Melanie; Schryer, Emily

2008-06-01

There is disagreement in the literature about whether a "positivity effect" in memory performance exists in older adults. To assess the generalizability of the effect, the authors examined memory for autobiographical, picture, and word information in a group of younger (17-29 years old) and older (60-84 years old) adults. For the autobiographical memory task, the authors asked participants to produce 4 positive, 4 negative, and 4 neutral recent autobiographical memories and to recall these a week later. For the picture and word tasks, participants studied photos or words of different valences (positive, negative, neutral) and later remembered them on a free-recall test. The authors found significant correlations in memory performance, across task material, for recall of both positive and neutral valence autobiographical events, pictures, and words. When the authors examined accurate memories, they failed to find consistent evidence, across the different types of material, of a positivity effect in either age group. However, the false memory findings offer more consistent support for a positivity effect in older adults. During recall of all 3 types of material, older participants recalled more false positive than false negative memories.

Working memory training to improve speech perception in noise across languages

PubMed Central

Ingvalson, Erin M.; Dhar, Sumitrajit; Wong, Patrick C. M.; Liu, Hanjun

2015-01-01

Working memory capacity has been linked to performance on many higher cognitive tasks, including the ability to perceive speech in noise. Current efforts to train working memory have demonstrated that working memory performance can be improved, suggesting that working memory training may lead to improved speech perception in noise. A further advantage of working memory training to improve speech perception in noise is that working memory training materials are often simple, such as letters or digits, making them easily translatable across languages. The current effort tested the hypothesis that working memory training would be associated with improved speech perception in noise and that materials would easily translate across languages. Native Mandarin Chinese and native English speakers completed ten days of reversed digit span training. Reading span and speech perception in noise both significantly improved following training, whereas untrained controls showed no gains. These data suggest that working memory training may be used to improve listeners' speech perception in noise and that the materials may be quickly adapted to a wide variety of listeners. PMID:26093435

Working memory training to improve speech perception in noise across languages.

PubMed

Ingvalson, Erin M; Dhar, Sumitrajit; Wong, Patrick C M; Liu, Hanjun

2015-06-01

Working memory capacity has been linked to performance on many higher cognitive tasks, including the ability to perceive speech in noise. Current efforts to train working memory have demonstrated that working memory performance can be improved, suggesting that working memory training may lead to improved speech perception in noise. A further advantage of working memory training to improve speech perception in noise is that working memory training materials are often simple, such as letters or digits, making them easily translatable across languages. The current effort tested the hypothesis that working memory training would be associated with improved speech perception in noise and that materials would easily translate across languages. Native Mandarin Chinese and native English speakers completed ten days of reversed digit span training. Reading span and speech perception in noise both significantly improved following training, whereas untrained controls showed no gains. These data suggest that working memory training may be used to improve listeners' speech perception in noise and that the materials may be quickly adapted to a wide variety of listeners.

Trinary Associative Memory Would Recognize Machine Parts

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang; Awwal, Abdul Ahad S.; Karim, Mohammad A.

1991-01-01

Trinary associative memory combines merits and overcomes major deficiencies of unipolar and bipolar logics by combining them in three-valued logic that reverts to unipolar or bipolar binary selectively, as needed to perform specific tasks. Advantage of associative memory: one obtains access to all parts of it simultaneously on basis of content, rather than address, of data. Consequently, used to exploit fully parallelism and speed of optical computing.

All-optical associative memory using photorefractive crystals and a saturable absorber

NASA Astrophysics Data System (ADS)

Duelli, Markus; Cudney, Roger S.; Keller, Claude; Guenter, Peter

1995-07-01

We report on the investigation of a new configuration of an all-optical associative memory. The images to be recalled associatively are stored in a LiNbO3 crystal via angular multiplexing. Thresholding of the reconstructed reference beams during associative readout is achieved by using a saturable absorber with an intensity-tunable threshold. We demonstrate associative readout and error correction for 10 strongly overlapping black-and-white images. Associative recall and full reconstruction is performed when only 1/500 of the image stored is entered.

Spacecraft optical disk recorder memory buffer control

NASA Technical Reports Server (NTRS)

Hodson, Robert F.

1992-01-01

The goal of this project is to develop an Application Specific Integrated Circuit (ASIC) for use in the control electronics of the Spacecraft Optical Disk Recorder (SODR). Specifically, this project is to design an extendable memory buffer controller ASIC for rate matching between a system Input/Output port and the SODR's device interface. The aforementioned goal can be partitioned into the following sub-goals: (1) completion of ASIC design and simulation (on-going via ASEE fellowship); (2) ASIC Fabrication (at ASIC manufacturer); and (3) ASIC Testing (NASA/LaRC, Christopher Newport University).

Optical memory effect from polarized Laguerre-Gaussian light beam in light-scattering turbid media

NASA Astrophysics Data System (ADS)

Shumyatsky, Pavel; Milione, Giovanni; Alfano, Robert R.

2014-06-01

Propagation effects of polarized Laguerre-Gaussian light with different orbital angular momentum (L) in turbid media are described. The optical memory effect in scattering media consisting of small and large size (compared to the wavelength) scatterers is investigated for scattered polarized light. Imaging using polarized laser modes with a varying orbital strength L-parameter was performed. The backscattered image quality (contrast) was enhanced by more than an order of magnitude using circularly polarized light when the concentration of scatterers was close to invisibility of the object.

Algorithm for optimizing bipolar interconnection weights with applications in associative memories and multitarget classification.

PubMed

Chang, S; Wong, K W; Zhang, W; Zhang, Y

1999-08-10

An algorithm for optimizing a bipolar interconnection weight matrix with the Hopfield network is proposed. The effectiveness of this algorithm is demonstrated by computer simulation and optical implementation. In the optical implementation of the neural network the interconnection weights are biased to yield a nonnegative weight matrix. Moreover, a threshold subchannel is added so that the system can realize, in real time, the bipolar weighted summation in a single channel. Preliminary experimental results obtained from the applications in associative memories and multitarget classification with rotation invariance are shown.

Algorithm for Optimizing Bipolar Interconnection Weights with Applications in Associative Memories and Multitarget Classification

NASA Astrophysics Data System (ADS)

Chang, Shengjiang; Wong, Kwok-Wo; Zhang, Wenwei; Zhang, Yanxin

1999-08-01

An algorithm for optimizing a bipolar interconnection weight matrix with the Hopfield network is proposed. The effectiveness of this algorithm is demonstrated by computer simulation and optical implementation. In the optical implementation of the neural network the interconnection weights are biased to yield a nonnegative weight matrix. Moreover, a threshold subchannel is added so that the system can realize, in real time, the bipolar weighted summation in a single channel. Preliminary experimental results obtained from the applications in associative memories and multitarget classification with rotation invariance are shown.

Creation of long-term coherent optical memory via controlled nonlinear interactions in Bose-Einstein condensates.

PubMed

Zhang, Rui; Garner, Sean R; Hau, Lene Vestergaard

2009-12-04

A Bose-Einstein condensate confined in an optical dipole trap is used to generate long-term coherent memory for light, and storage times of more than 1 s are observed. Phase coherence of the condensate as well as controlled manipulations of elastic and inelastic atomic scattering processes are utilized to increase the storage fidelity by several orders of magnitude over previous schemes. The results have important applications for creation of long-distance quantum networks and for generation of entangled states of light and matter.

Optically readout write once read many memory with single active organic layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Viet Cuong; Lee, Pooi See, E-mail: pslee@ntu.edu.sg

An optically readable write once read many memory (WORM) in Ag/Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH PPV)/ITO is demonstrated in this work. Utilising characteristics of the organic light emitting diode structure of Ag/MEH PPV/ITO and electrochemical metallization of Ag, a WORM with light emitting capability can be realised. The simple fabrication process and multifunction capability of the device can be useful for future wearable optoelectronics and photomemory applications, where fast and parallel readout can be achieved by photons.

A drive based on an element made of a thermomechanical memory material

NASA Astrophysics Data System (ADS)

Krakhin, O. I.; Dubovik, I. N.; Rozarenova, Iu. A.

The advantages of using drives with active elements made of thermomechanical memory materials in aircraft structures are briefly reviewed. The choice of a particular type of active element based on a thermomechanical memory material is shown to depend on the specific operating conditions of the drive. The design of a rotary drive with an active element of TN-1 alloy is examined as an example.

Design and implementation of an optical Gaussian noise generator

NASA Astrophysics Data System (ADS)

Za~O, Leonardo; Loss, Gustavo; Coelho, Rosângela

2009-08-01

A design of a fast and accurate optical Gaussian noise generator is proposed and demonstrated. The noise sample generation is based on the Box-Muller algorithm. The functions implementation was performed on a high-speed Altera Stratix EP1S25 field-programmable gate array (FPGA) development kit. It enabled the generation of 150 million 16-bit noise samples per second. The Gaussian noise generator required only 7.4% of the FPGA logic elements, 1.2% of the RAM memory, 0.04% of the ROM memory, and a laser source. The optical pulses were generated by a laser source externally modulated by the data bit samples using the frequency-shift keying technique. The accuracy of the noise samples was evaluated for different sequences size and confidence intervals. The noise sample pattern was validated by the Bhattacharyya distance (Bd) and the autocorrelation function. The results showed that the proposed design of the optical Gaussian noise generator is very promising to evaluate the performance of optical communications channels with very low bit-error-rate values.

On the susceptibility of adaptive memory to false memory illusions.

PubMed

Howe, Mark L; Derbish, Mary H

2010-05-01

Previous research has shown that survival-related processing of word lists enhances retention for that material. However, the claim that survival-related memories are more accurate has only been examined when true recall and recognition of neutral material has been measured. In the current experiments, we examined the adaptive memory superiority effect for different types of processing and material, measuring accuracy more directly by comparing true and false recollection rates. Survival-related information and processing was examined using word lists containing backward associates of neutral, negative, and survival-related critical lures and type of processing (pleasantness, moving, survival) was varied using an incidental memory paradigm. Across four experiments, results showed that survival-related words were more susceptible than negative and neutral words to the false memory illusion and that processing information in terms of its relevance to survival independently increased this susceptibility to the false memory illusion. Overall, although survival-related processing and survival-related information resulted in poorer, not more accurate, memory, such inaccuracies may have adaptive significance. These findings are discussed in the context of false memory research and recent theories concerning the importance of survival processing and the nature of adaptive memory. Copyright 2009 Elsevier B.V. All rights reserved.

Non-Declarative Sequence Learning does not Show Savings in Relearning

PubMed Central

Keisler, Aysha; Willingham, Daniel T.

2007-01-01

Researchers have utilized the savings in relearning paradigm in a variety of settings since Ebbinghaus developed the tool over a century ago. In spite of its widespread use, we do not yet understand what type(s) of memory are measurable by savings. Specifically, can savings measure both declarative and non-declarative memories? The lack of conscious recollection of the encoded material in some studies indicates that non-declarative memories may show savings effects, but as all studies to date have used declarative tasks, we cannot be certain. Here, we administer a non-declarative task and then measure savings in relearning the material declaratively. Our results show that while material outside of awareness may show savings effects, non-declarative sequence memory does not. These data highlight the important distinction between memory without awareness and non-declarative memory. PMID:17343944

Non-declarative sequence learning does not show savings in relearning.

PubMed

Keisler, Aysha; Willingham, Daniel T

2007-04-01

Researchers have utilized the savings in relearning paradigm in a variety of settings since Ebbinghaus developed the tool over a century ago. In spite of its widespread use, we do not yet understand what type(s) of memory are measurable by savings. Specifically, can savings measure both declarative and non-declarative memories? The lack of conscious recollection of the encoded material in some studies indicates that non-declarative memories may show savings effects, but as all studies to date have used declarative tasks, we cannot be certain. Here, we administer a non-declarative task and then measure savings in relearning the material declaratively. Our results show that while material outside of awareness may show savings effects, non-declarative sequence memory does not. These data highlight the important distinction between memory without awareness and non-declarative memory.

3-DIMENSIONAL Optoelectronic

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Ashok Venketaraman

This thesis covers the design, analysis, optimization, and implementation of optoelectronic (N,M,F) networks. (N,M,F) networks are generic space-division networks that are well suited to implementation using optoelectronic integrated circuits and free-space optical interconnects. An (N,M,F) networks consists of N input channels each having a fanout F_{rm o}, M output channels each having a fanin F_{rm i}, and Log_{rm K}(N/F) stages of K x K switches. The functionality of the fanout, switching, and fanin stages depends on the specific application. Three applications of optoelectronic (N,M,F) networks are considered. The first is an optoelectronic (N,1,1) content -addressable memory system that achieves associative recall on two-dimensional images retrieved from a parallel-access optical memory. The design and simulation of the associative memory are discussed, and an experimental emulation of a prototype system using images from a parallel-readout optical disk is presented. The system design provides superior performance to existing electronic content-addressable memory chips in terms of capacity and search rate, and uses readily available optical disk and VLSI technologies. Next, a scalable optoelectronic (N,M,F) neural network that uses free-space holographic optical interconnects is presented. The neural architecture minimizes the number of optical transmitters needed, and provides accurate electronic fanin with low signal skew, and dendritic-type fan-in processing capability in a compact layout. Optimal data-encoding methods and circuit techniques are discussed. The implementation of an prototype optoelectronic neural system, and its application to a simple recognition task is demonstrated. Finally, the design, analysis, and optimization of a (N,N,F) self-routing, packet-switched multistage interconnection network is described. The network is suitable for parallel computing and broadband switching applications. The tradeoff between optical and electronic interconnects is examined quantitatively by varying the electronic switch size K. The performance of the (N,N,F) network versus the fanning parameter F, is also analyzed. It is shown that the optoelectronic (N,N,F) networks provide a range of performance-cost alternatives, and offer superior performance-per-cost to fully electronic switching networks and to previous networks designs.

An automatic analyzer of solid state nuclear track detectors using an optic RAM as image sensor

NASA Astrophysics Data System (ADS)

Staderini, Enrico Maria; Castellano, Alfredo

1986-02-01

An optic RAM is a conventional digital random access read/write dynamic memory device featuring a quartz windowed package and memory cells regularly ordered on the chip. Such a device is used as an image sensor because each cell retains data stored in it for a time depending on the intensity of the light incident on the cell itself. The authors have developed a system which uses an optic RAM to acquire and digitize images from electrochemically etched CR39 solid state nuclear track detectors (SSNTD) in the track count rate up to 5000 cm -2. On the digital image so obtained, a microprocessor, with appropriate software, performs image analysis, filtering, tracks counting and evaluation.

Implementation of a digital optical matrix-vector multiplier using a holographic look-up table and residue arithmetic

NASA Technical Reports Server (NTRS)

Habiby, Sarry F.

1987-01-01

The design and implementation of a digital (numerical) optical matrix-vector multiplier are presented. The objective is to demonstrate the operation of an optical processor designed to minimize computation time in performing a practical computing application. This is done by using the large array of processing elements in a Hughes liquid crystal light valve, and relying on the residue arithmetic representation, a holographic optical memory, and position coded optical look-up tables. In the design, all operations are performed in effectively one light valve response time regardless of matrix size. The features of the design allowing fast computation include the residue arithmetic representation, the mapping approach to computation, and the holographic memory. In addition, other features of the work include a practical light valve configuration for efficient polarization control, a model for recording multiple exposures in silver halides with equal reconstruction efficiency, and using light from an optical fiber for a reference beam source in constructing the hologram. The design can be extended to implement larger matrix arrays without increasing computation time.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

PubMed

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Kim, In Gyoo; Oh, Jin Hyuk; Kim, Sun Ae; Park, Jaegyu; Kim, Sanggi

2015-06-10

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.

Improved Damage Resistant Composite Materials Incorporating Shape Memory Alloys

NASA Technical Reports Server (NTRS)

Paine, Jeffrey S. N.; Rogers, Craig A.

1996-01-01

Metallic shape memory alloys (SMA) such as nitinol have unique shape recovery behavior and mechanical properties associated with a material phase change that have been used in a variety of sensing and actuation applications. Recent studies have shown that integrating nitinol-SMA actuators into composite materials increases the composite material's functionality. Hybrid composites of conventional graphite/epoxy or glass/epoxy and nitinol-SMA elements can perform functions in applications where monolithic composites perform inadequately. One such application is the use of hybrid composites to function both in load bearing and armor capacities. While monolithic composites with high strength-to-weight ratios function efficiently as loadbearing structures, because of their brittle nature, impact loading can cause significant catastrophic damage. Initial composite failure modes such as delamination and matrix cracking dissipate some impact energy, but when stress exceeds the composite's ultimate strength, fiber fracture and material perforation become dominant. One of the few methods that has been developed to reduce material perforation is hybridizing polymer matrix composites with tough kevlar or high modulus polyethynylene plies. The tough fibers increase the impact resistance and the stiffer and stronger graphite fibers carry the majority of the load. Similarly, by adding nitinol-SMA elements that absorb impact energy through the stress-induced martensitic phase transformation, the composites' impact perforation resistance can be greatly enhanced. The results of drop-weight and high velocity gas-gun impact testing of various composite materials will be presented. The results demonstrate that hybridizing composites with nitinol-SMA elements significantly increases perforation resistance compared to other traditional toughening elements. Inspection of the composite specimens at various stages of perforation by optical microscope illustrates the mechanisms by which perforation is initiated. Results suggest that the out-of-plane transverse shear properties of the composite and nitinol elements have a significant effect on the perforation resistance. Applications that can utilize the hybrid composites effectively will also be presented with the experimental studies.

Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

PubMed

Lee, Young Tack; Kwon, Hyeokjae; Kim, Jin Sung; Kim, Hong-Hee; Lee, Yun Jae; Lim, Jung Ah; Song, Yong-Won; Yi, Yeonjin; Choi, Won-Kook; Hwang, Do Kyung; Im, Seongil

2015-10-27

Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.

Development of New Electro-Optic and Acousto-Optic Materials.

DTIC Science & Technology

1983-11-01

Improved materials are required for active optical devices, including electro - optic and acousto-optic modulators, switches and tunable filters, as...many microwave applications. In addition, electro - optic and acousto-optic devices are materials limited because the materials currently available are...these materials for applications involving the electro - optic effect, degenerate four-wave mixing and surface acoustic wave technology.

Resistively heated shape memory polymer device

DOEpatents

Marion, III, John E.; Bearinger, Jane P.; Wilson, Thomas S.; Maitland, Duncan J.

2017-09-05

A resistively heated shape memory polymer device is made by providing a rod, sheet or substrate that includes a resistive medium. The rod, sheet or substrate is coated with a first shape memory polymer providing a coated intermediate unit. The coated intermediate unit is in turn coated with a conductive material providing a second intermediate unit. The second coated intermediate unit is in turn coated with an outer shape memory polymer. The rod, sheet or substrate is exposed and an electrical lead is attached to the rod, sheet or substrate. The conductive material is exposed and an electrical lead is attached to the conductive material.

Resistively heated shape memory polymer device

DOEpatents

Marion, III, John E.; Bearinger, Jane P.; Wilson, Thomas S.; Maitland, Duncan J.

2016-10-25

A resistively heated shape memory polymer device is made by providing a rod, sheet or substrate that includes a resistive medium. The rod, sheet or substrate is coated with a first shape memory polymer providing a coated intermediate unit. The coated intermediate unit is in turn coated with a conductive material providing a second intermediate unit. The second coated intermediate unit is in turn coated with an outer shape memory polymer. The rod, sheet or substrate is exposed and an electrical lead is attached to the rod, sheet or substrate. The conductive material is exposed and an electrical lead is attached to the conductive material.

Spectral multiplexing for scalable quantum photonics using an atomic frequency comb quantum memory and feed-forward control.

PubMed

Sinclair, Neil; Saglamyurek, Erhan; Mallahzadeh, Hassan; Slater, Joshua A; George, Mathew; Ricken, Raimund; Hedges, Morgan P; Oblak, Daniel; Simon, Christoph; Sohler, Wolfgang; Tittel, Wolfgang

2014-08-01

Future multiphoton applications of quantum optics and quantum information science require quantum memories that simultaneously store many photon states, each encoded into a different optical mode, and enable one to select the mapping between any input and a specific retrieved mode during storage. Here we show, with the example of a quantum repeater, how to employ spectrally multiplexed states and memories with fixed storage times that allow such mapping between spectral modes. Furthermore, using a Ti:Tm:LiNbO_{3} waveguide cooled to 3 K, a phase modulator, and a spectral filter, we demonstrate storage followed by the required feed-forward-controlled frequency manipulation with time-bin qubits encoded into up to 26 multiplexed spectral modes and 97% fidelity.

Electro-Optic Properties of Holographically Patterned, Polymer Stabilized Cholesteric Liquid Crystals (Preprint)

DTIC Science & Technology

2007-01-01

Electro - optic properties of cholesteric liquid crystals with holographically patterned polymer stabilization were examined. It is hypothesized that...enhanced electro - optic properties of the final device. Prior to holographic patterning, polymer stabilization with large elastic memory was generated by way... electro - optic properties appear to stem from a single dimension domain size increase, which allows for a reduction in the LC/polymer interaction.

Selective Postevent Review and Children's Memory for Nonreviewed Materials

ERIC Educational Resources Information Center

Conroy, R.; Salmon, K.

2005-01-01

Two experiments investigated the impact of selective postevent questioning on children's memory for nonreviewed materials. In both experiments, children participated in a series of novel activities. Children in the selective-review condition were subsequently questioned about half of these and comparisons were made to memory in a no-review…

Photonic Potential of Haloarchaeal Pigment Bacteriorhodopsin for Future Electronics: A Review.

PubMed

Ashwini, Ravi; Vijayanand, S; Hemapriya, J

2017-08-01

Haloarchaea are known for its adaptation in extreme saline environment. Halophilic archaea produces carotenoid pigments and proton pumps to protect them from extremes of salinity. Bacteriorhodopsin (bR) is a light-driven proton pump that resides in the membrane of haloarchaea Halobacterium salinarum. The photocycle of Bacteriorhodopsin passes through several states from K to O, finally liberating ATP for host's survival. Extensive studies on Bacteriorhodopsin photocycle has provided in depth knowledge on their sequential mechanism of converting solar energy into chemical energy inside the cell. This ability of Bacteriorhodopsin to harvest sunlight has now been experimented to exploit the unexplored and extensively available solar energy in various biotechnological applications. Currently, bacteriorhodopsin finds its importance in dye-sensitized solar cell (DSSC), logic gates (integrated circuits, IC's), optical switching, optical memories, storage devices (random access memory, RAM), biosensors, electronic sensors and optical microcavities. This review deals with the optical and electrical applications of the purple pigment Bacteriorhodopsin.

Coherence rephasing combined with spin-wave storage using chirped control pulses

NASA Astrophysics Data System (ADS)

Demeter, Gabor

2014-06-01

Photon-echo based optical quantum memory schemes often employ intermediate steps to transform optical coherences to spin coherences for longer storage times. We analyze a scheme that uses three identical chirped control pulses for coherence rephasing in an inhomogeneously broadened ensemble of three-level Λ systems. The pulses induce a cyclic permutation of the atomic populations in the adiabatic regime. Optical coherences created by a signal pulse are stored as spin coherences at an intermediate time interval, and are rephased for echo emission when the ensemble is returned to the initial state. Echo emission during a possible partial rephasing when the medium is inverted can be suppressed with an appropriate choice of control pulse wave vectors. We demonstrate that the scheme works in an optically dense ensemble, despite control pulse distortions during propagation. It integrates conveniently the spin-wave storage step into memory schemes based on a second rephasing of the atomic coherences.

Large conditional single-photon cross-phase modulation

PubMed Central

Hosseini, Mahdi; Duan, Yiheng; Vuletić, Vladan

2016-01-01

Deterministic optical quantum logic requires a nonlinear quantum process that alters the phase of a quantum optical state by π through interaction with only one photon. Here, we demonstrate a large conditional cross-phase modulation between a signal field, stored inside an atomic quantum memory, and a control photon that traverses a high-finesse optical cavity containing the atomic memory. This approach avoids fundamental limitations associated with multimode effects for traveling optical photons. We measure a conditional cross-phase shift of π/6 (and up to π/3 by postselection on photons that remain in the system longer than average) between the retrieved signal and control photons, and confirm deterministic entanglement between the signal and control modes by extracting a positive concurrence. By upgrading to a state-of-the-art cavity, our system can reach a coherent phase shift of π at low loss, enabling deterministic and universal photonic quantum logic. PMID:27519798

The Effects of Acute Stress on Episodic Memory: A Meta-Analysis and Integrative Review

PubMed Central

Shields, Grant S.; Sazma, Matthew A.; McCullough, Andrew M.; Yonelinas, Andrew P.

2017-01-01

A growing body of research has indicated that acute stress can critically impact memory. However, there are a number of inconsistencies in the literature, and important questions remain regarding the conditions under which stress effects emerge as well as basic questions about how stress impacts different phases of memory. In this meta-analysis, we examined 113 independent studies in humans with 6,216 participants that explored effects of stress on encoding, post-encoding, retrieval, or post-reactivation phases of episodic memory. The results indicated that when stress occurred prior to or during encoding it impaired memory, unless both the delay between the stressor and encoding was very short and the study materials were directly related to the stressor, in which case stress improved encoding. In contrast, post-encoding stress improved memory unless the stressor occurred in a different physical context than the study materials. When stress occurred just prior to or during retrieval, memory was impaired, and these effects were larger for emotionally valenced materials than neutral materials. Although stress consistently increased cortisol, the magnitude of the cortisol response was not related to the effects of stress on memory. Nonetheless, the effects of stress on memory were generally reduced in magnitude for women taking hormonal contraceptives. These analyses indicate that stress disrupts some episodic memory processes while enhancing others, and that the effects of stress are modulated by a number of critical factors. These results provide important constraints on current theories of stress and memory, and point to new questions for future research. PMID:28368148

The effects of acute stress on episodic memory: A meta-analysis and integrative review.

PubMed

Shields, Grant S; Sazma, Matthew A; McCullough, Andrew M; Yonelinas, Andrew P

2017-06-01

A growing body of research has indicated that acute stress can critically impact memory. However, there are a number of inconsistencies in the literature, and important questions remain regarding the conditions under which stress effects emerge as well as basic questions about how stress impacts different phases of memory. In this meta-analysis, we examined 113 independent studies in humans with 6,216 participants that explored effects of stress on encoding, postencoding, retrieval, or postreactivation phases of episodic memory. The results indicated that when stress occurred prior to or during encoding it impaired memory, unless both the delay between the stressor and encoding was very short and the study materials were directly related to the stressor, in which case stress improved encoding. In contrast, postencoding stress improved memory unless the stressor occurred in a different physical context than the study materials. When stress occurred just prior to or during retrieval, memory was impaired, and these effects were larger for emotionally valenced materials than neutral materials. Although stress consistently increased cortisol, the magnitude of the cortisol response was not related to the effects of stress on memory. Nonetheless, the effects of stress on memory were generally reduced in magnitude for women taking hormonal contraceptives. These analyses indicate that stress disrupts some episodic memory processes while enhancing others, and that the effects of stress are modulated by a number of critical factors. These results provide important constraints on current theories of stress and memory, and point to new questions for future research. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

A Retina-Like Dual Band Organic Photosensor Array for Filter-Free Near-Infrared-to-Memory Operations.

PubMed

Wang, Hanlin; Liu, Hongtao; Zhao, Qiang; Ni, Zhenjie; Zou, Ye; Yang, Jie; Wang, Lifeng; Sun, Yanqiu; Guo, Yunlong; Hu, Wenping; Liu, Yunqi

2017-08-01

Human eyes use retina photoreceptor cells to absorb and distinguish photons from different wavelengths to construct an image. Mimicry of such a process and extension of its spectral response into the near-infrared (NIR) is indispensable for night surveillance, retinal prosthetics, and medical imaging applications. Currently, NIR organic photosensors demand optical filters to reduce visible interference, thus making filter-free and anti-visible NIR imaging a challenging task. To solve this limitation, a filter-free and conformal, retina-inspired NIR organic photosensor is presented. Featuring an integration of photosensing and floating-gate memory modules, the device possesses an acute color distinguishing capability. In general, the retina-like photosensor transduces NIR (850 nm) into nonvolatile memory and acts as a dynamic photoswitch under green light (550 nm). In doing this, a filter-free but color-distinguishing photosensor is demonstrated that selectively converts NIR optical signals into nonvolatile memory. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-step frequency conversion for connecting distant quantum memories by transmission through an optical fiber

NASA Astrophysics Data System (ADS)

Tamura, Shuhei; Ikeda, Kohei; Okamura, Kotaro; Yoshii, Kazumichi; Hong, Feng-Lei; Horikiri, Tomoyuki; Kosaka, Hideo

2018-06-01

Long-distance quantum communication requires entanglement between distant quantum memories. For this purpose, photon transmission is necessary to connect the distant memories. Here, for the first time, we develop a two-step frequency conversion process (from a visible wavelength to a telecommunication wavelength and back) involving the use of independent two-frequency conversion media where the target quantum memories are nitrogen-vacancy centers in diamonds (with an emission/absorption wavelength of 637.2 nm), and experimentally characterize the performance of this process acting on light from an attenuated CW laser. A total conversion efficiency of approximately 7% is achieved. The noise generated in the frequency conversion processes is measured, and the signal-to-noise ratio is estimated for a single photon signal emitted by a nitrogen-vacancy (NV) center. The developed frequency conversion system has future applications via transmission through a long optical fiber channel at a telecommunication wavelength for a quantum repeater network.

Frequency and bandwidth conversion of single photons in a room-temperature diamond quantum memory

PubMed Central

Fisher, Kent A. G.; England, Duncan G.; MacLean, Jean-Philippe W.; Bustard, Philip J.; Resch, Kevin J.; Sussman, Benjamin J.

2016-01-01

The spectral manipulation of photons is essential for linking components in a quantum network. Large frequency shifts are needed for conversion between optical and telecommunication frequencies, while smaller shifts are useful for frequency-multiplexing quantum systems, in the same way that wavelength division multiplexing is used in classical communications. Here we demonstrate frequency and bandwidth conversion of single photons in a room-temperature diamond quantum memory. Heralded 723.5 nm photons, with 4.1 nm bandwidth, are stored as optical phonons in the diamond via a Raman transition. Upon retrieval from the diamond memory, the spectral shape of the photons is determined by a tunable read pulse through the reverse Raman transition. We report central frequency tunability over 4.2 times the input bandwidth, and bandwidth modulation between 0.5 and 1.9 times the input bandwidth. Our results demonstrate the potential for diamond, and Raman memories in general, as an integrated platform for photon storage and spectral conversion. PMID:27045988

Frequency and bandwidth conversion of single photons in a room-temperature diamond quantum memory.

PubMed

Fisher, Kent A G; England, Duncan G; MacLean, Jean-Philippe W; Bustard, Philip J; Resch, Kevin J; Sussman, Benjamin J

2016-04-05

The spectral manipulation of photons is essential for linking components in a quantum network. Large frequency shifts are needed for conversion between optical and telecommunication frequencies, while smaller shifts are useful for frequency-multiplexing quantum systems, in the same way that wavelength division multiplexing is used in classical communications. Here we demonstrate frequency and bandwidth conversion of single photons in a room-temperature diamond quantum memory. Heralded 723.5 nm photons, with 4.1 nm bandwidth, are stored as optical phonons in the diamond via a Raman transition. Upon retrieval from the diamond memory, the spectral shape of the photons is determined by a tunable read pulse through the reverse Raman transition. We report central frequency tunability over 4.2 times the input bandwidth, and bandwidth modulation between 0.5 and 1.9 times the input bandwidth. Our results demonstrate the potential for diamond, and Raman memories in general, as an integrated platform for photon storage and spectral conversion.

Markovian and non-Markovian light-emission channels in strained quantum wires.

PubMed

Lopez-Richard, V; González, J C; Matinaga, F M; Trallero-Giner, C; Ribeiro, E; Sousa Dias, M Rebello; Villegas-Lelovsky, L; Marques, G E

2009-09-01

We have achieved conditions to obtain optical memory effects in semiconductor nanostructures. The system is based on strained InP quantum wires where the tuning of the heavy-light valence band splitting has allowed the existence of two independent optical channels with correlated and uncorrelated excitation and light-emission processes. The presence of an optical channel that preserves the excitation memory is unambiguously corroborated by photoluminescence measurements of free-standing quantum wires under different configurations of the incoming and outgoing light polarizations in various samples. High-resolution transmission electron microscopy and electron diffraction indicate the presence of strain effects in the optical response. By using this effect and under certain growth conditions, we have shown that the optical recombination is mediated by relaxation processes with different natures: one a Markov and another with a non-Markovian signature. Resonance intersubband light-heavy hole transitions assisted by optical phonons provide the desired mechanism for the correlated non-Markovian carrier relaxation process. A multiband calculation for strained InP quantum wires was developed to account for the description of the character of the valence band states and gives quantitative support for light hole-heavy hole transitions assisted by optical phonons.

Creating a false memory in the hippocampus.

PubMed

Ramirez, Steve; Liu, Xu; Lin, Pei-Ann; Suh, Junghyup; Pignatelli, Michele; Redondo, Roger L; Ryan, Tomás J; Tonegawa, Susumu

2013-07-26

Memories can be unreliable. We created a false memory in mice by optogenetically manipulating memory engram-bearing cells in the hippocampus. Dentate gyrus (DG) or CA1 neurons activated by exposure to a particular context were labeled with channelrhodopsin-2. These neurons were later optically reactivated during fear conditioning in a different context. The DG experimental group showed increased freezing in the original context, in which a foot shock was never delivered. The recall of this false memory was context-specific, activated similar downstream regions engaged during natural fear memory recall, and was also capable of driving an active fear response. Our data demonstrate that it is possible to generate an internally represented and behaviorally expressed fear memory via artificial means.

Data Movement Dominates: Advanced Memory Technology to Address the Real Exascale Power Problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergman, Keren

Energy is the fundamental barrier to Exascale supercomputing and is dominated by the cost of moving data from one point to another, not computation. Similarly, performance is dominated by data movement, not computation. The solution to this problem requires three critical technologies: 3D integration, optical chip-to-chip communication, and a new communication model. The central goal of the Sandia led "Data Movement Dominates" project aimed to develop memory systems and new architectures based on these technologies that have the potential to lower the cost of local memory accesses by orders of magnitude and provide substantially more bandwidth. Only through these transformationalmore » advances can future systems reach the goals of Exascale computing with a manageable power budgets. The Sandia led team included co-PIs from Columbia University, Lawrence Berkeley Lab, and the University of Maryland. The Columbia effort of Data Movement Dominates focused on developing a physically accurate simulation environment and experimental verification for optically-connected memory (OCM) systems that can enable continued performance scaling through high-bandwidth capacity, energy-efficient bit-rate transparency, and time-of-flight latency. With OCM, memory device parallelism and total capacity can scale to match future high-performance computing requirements without sacrificing data-movement efficiency. When we consider systems with integrated photonics, links to memory can be seamlessly integrated with the interconnection network-in a sense, memory becomes a primary aspect of the interconnection network. At the core of the Columbia effort, toward expanding our understanding of OCM enabled computing we have created an integrated modeling and simulation environment that uniquely integrates the physical behavior of the optical layer. The PhoenxSim suite of design and software tools developed under this effort has enabled the co-design of and performance evaluation photonics-enabled OCM architectures on Exascale computing systems.« less

Uncertainty relations with quantum memory for the Wehrl entropy

NASA Astrophysics Data System (ADS)

De Palma, Giacomo

2018-03-01

We prove two new fundamental uncertainty relations with quantum memory for the Wehrl entropy. The first relation applies to the bipartite memory scenario. It determines the minimum conditional Wehrl entropy among all the quantum states with a given conditional von Neumann entropy and proves that this minimum is asymptotically achieved by a suitable sequence of quantum Gaussian states. The second relation applies to the tripartite memory scenario. It determines the minimum of the sum of the Wehrl entropy of a quantum state conditioned on the first memory quantum system with the Wehrl entropy of the same state conditioned on the second memory quantum system and proves that also this minimum is asymptotically achieved by a suitable sequence of quantum Gaussian states. The Wehrl entropy of a quantum state is the Shannon differential entropy of the outcome of a heterodyne measurement performed on the state. The heterodyne measurement is one of the main measurements in quantum optics and lies at the basis of one of the most promising protocols for quantum key distribution. These fundamental entropic uncertainty relations will be a valuable tool in quantum information and will, for example, find application in security proofs of quantum key distribution protocols in the asymptotic regime and in entanglement witnessing in quantum optics.

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

PubMed

Bragaglia, Valeria; Arciprete, Fabrizio; Zhang, Wei; Mio, Antonio Massimiliano; Zallo, Eugenio; Perumal, Karthick; Giussani, Alessandro; Cecchi, Stefano; Boschker, Jos Emiel; Riechert, Henning; Privitera, Stefania; Rimini, Emanuele; Mazzarello, Riccardo; Calarco, Raffaella

2016-04-01

Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline GeSbTe alloys (GST) films evidenced a Metal-Insulator Transition (MIT) attributed to disorder in the crystalline phase. Here we report on a fundamental advance in the fabrication of GST with out-of-plane stacking of ordered vacancy layers by means of three distinct methods: Molecular Beam Epitaxy, thermal annealing and application of femtosecond laser pulses. We assess the degree of vacancy ordering and explicitly correlate it with the MIT. We further tune the ordering in a controlled fashion attaining a large range of resistivity. Employing ordered GST might allow the realization of cells with larger programming windows.

Pattern-free thermal modulator via thermal radiation between Van der Waals materials

NASA Astrophysics Data System (ADS)

Liu, Xianglei; Shen, Jiadong; Xuan, Yimin

2017-10-01

Modulating heat flux provides a platform for a plethora of emerging devices such as thermal diodes, thermal transistors, and thermal memories. Here, a pattern-free noncontact thermal modulator is proposed based on the mechanical rotation between two Van der Waals films with optical axes parallel to the surfaces. A modulation contrast can reach a value higher than 5 for hexagonal Boron Nitride (hBN) films separated by a nanoscale gap distance. The dominant radiative heat exchange comes from the excitation of both Type I and Type II hyperbolic surface phonon polaritons (HSPhPs) at the vacuum-hBN interface for different orientations, while the large modulation contrast is mainly attributed to the mismatching Type I HSPhPs induced by rotation. This work opens the possibility to design cheap thermal modulators without relying on nanofabrication techniques, and paves the way to apply natural Van der Waals materials in manipulating heat currents in an active way.

Glass-like phonon scattering from a spontaneous nanostructure in AgSbTe2.

PubMed

Ma, J; Delaire, O; May, A F; Carlton, C E; McGuire, M A; VanBebber, L H; Abernathy, D L; Ehlers, G; Hong, Tao; Huq, A; Tian, Wei; Keppens, V M; Shao-Horn, Y; Sales, B C

2013-06-01

Materials with very low thermal conductivity are of great interest for both thermoelectric and optical phase-change applications. Synthetic nanostructuring is most promising for suppressing thermal conductivity through phonon scattering, but challenges remain in producing bulk samples. In crystalline AgSbTe2 we show that a spontaneously forming nanostructure leads to a suppression of thermal conductivity to a glass-like level. Our mapping of the phonon mean free paths provides a novel bottom-up microscopic account of thermal conductivity and also reveals intrinsic anisotropies associated with the nanostructure. Ground-state degeneracy in AgSbTe2 leads to the natural formation of nanoscale domains with different orderings on the cation sublattice, and correlated atomic displacements, which efficiently scatter phonons. This mechanism is general and suggests a new avenue for the nanoscale engineering of materials to achieve low thermal conductivities for efficient thermoelectric converters and phase-change memory devices.

Three-dimensional image display system using stereogram and holographic optical memory techniques

NASA Astrophysics Data System (ADS)

Kim, Cheol S.; Kim, Jung G.; Shin, Chang-Mok; Kim, Soo-Joong

2001-09-01

In this paper, we implemented a three dimensional image display system using stereogram and holographic optical memory techniques which can store many images and reconstruct them automatically. In this system, to store and reconstruct stereo images, incident angle of reference beam must be controlled in real time, so we used BPH (binary phase hologram) and LCD (liquid crystal display) for controlling reference beam. And input images are represented on the LCD without polarizer/analyzer for maintaining uniform beam intensities regardless of the brightness of input images. The input images and BPHs are edited using application software with having the same recording scheduled time interval in storing. The reconstructed stereo images are acquired by capturing the output images with CCD camera at the behind of the analyzer which transforms phase information into brightness information of images. The reference beams are acquired by Fourier transform of BPH which designed with SA (simulated annealing) algorithm, and represented on the LCD with the 0.05 seconds time interval using application software for reconstructing the stereo images. In output plane, we used a LCD shutter that is synchronized to a monitor that displays alternate left and right eye images for depth perception. We demonstrated optical experiment which store and reconstruct four stereo images in BaTiO3 repeatedly using holographic optical memory techniques.

Nanophotonic photon echo memory based on rare-earth-doped crystals

NASA Astrophysics Data System (ADS)

Zhong, Tian; Kindem, Jonathan; Miyazono, Evan; Faraon, Andrei; Caltech nano quantum optics Team

2015-03-01

Rare earth ions (REIs) are promising candidates for implementing solid-state quantum memories and quantum repeater devices. Their high spectral stability and long coherence times make REIs a good choice for integration in an on-chip quantum nano-photonic platform. We report the coupling of the 883 nm transition of Neodymium (Nd) to a Yttrium orthosilicate (YSO) photonic crystal nano-beam resonator, achieving Purcell enhanced spontaneous emission by 21 times and increased optical absorption. Photon echoes were observed in nano-beams of different doping concentrations, yielding optical coherence times T2 up to 80 μs that are comparable to unprocessed bulk samples. This indicates the remarkable coherence properties of Nd are preserved during nanofabrication, therefore opening the possibility of efficient on-chip optical quantum memories. The nano-resonator with mode volume of 1 . 6(λ / n) 3 was fabricated using focused ion beam, and a quality factor of 3200 was measured. Purcell enhanced absorption of 80% by an ensemble of ~ 1 × 106 ions in the resonator was measured, which fulfills the cavity impedance matching condition that is necessary to achieve quantum storage of photons with unity efficiency.

Reactivation of Memory by Hypnosis and Suggestion. Final Report.

ERIC Educational Resources Information Center

London, Perry; Cooper, Leslie M.

This study tested the hypothesis that the memory of meaningful material can be reactivated without relearning by means of hypnotic suggestion. Very susceptible (T) and non-susceptible (UT) subjects were sought from among those who volunteered for the experiment. Two forms of a memory test for connected meaningful material were developed. Each form…

Controlling conflict from interfering long-term memory representations.

PubMed

Jost, Kerstin; Khader, Patrick H; Düsel, Peter; Richter, Franziska R; Rohde, Kristina B; Bien, Siegfried; Rösler, Frank

2012-05-01

Remembering is more than an activation of a memory trace. As retrieval cues are often not uniquely related to one specific memory, cognitive control should come into play to guide selective memory retrieval by focusing on relevant while ignoring irrelevant information. Here, we investigated, by means of EEG and fMRI, how the memory system deals with retrieval interference arising when retrieval cues are associated with two material types (faces and spatial positions), but only one is task-relevant. The topography of slow EEG potentials and the fMRI BOLD signal in posterior storage areas indicated that in such situations not only the relevant but also the irrelevant material becomes activated. This results in retrieval interference that triggers control processes mediated by the medial and lateral PFC, which are presumably involved in biasing target representations by boosting the task-relevant material. Moreover, memory-based conflict was found to be dissociable from response conflict that arises when the relevant and irrelevant materials imply different responses. The two types of conflict show different activations in the medial frontal cortex, supporting the claim of domain-specific prefrontal control systems.

Radiologists remember mountains better than radiographs, or do they?

PubMed

Evans, Karla K; Marom, Edith M; Godoy, Myrna C B; Palacio, Diana; Sagebiel, Tara; Cuellar, Sonia Betancourt; McEntee, Mark; Tian, Charles; Brennan, Patrick C; Haygood, Tamara Miner

2016-01-01

Expertise with encoding material has been shown to aid long-term memory for that material. It is not clear how relevant this expertise is for image memorability (e.g., radiologists' memory for radiographs), and how robust over time. In two studies, we tested scene memory using a standard long-term memory paradigm. One compared the performance of radiologists to naïve observers on two image sets, chest radiographs and everyday scenes, and the other radiologists' memory with immediate as opposed to delayed recognition tests using musculoskeletal radiographs and forest scenes. Radiologists' memory was better than novices for images of expertise but no different for everyday scenes. With the heterogeneity of image sets equated, radiologists' expertise with radiographs afforded them better memory for the musculoskeletal radiographs than forest scenes. Enhanced memory for images of expertise disappeared over time, resulting in chance level performance for both image sets after weeks of delay. Expertise with the material is important for visual memorability but not to the same extent as idiosyncratic detail and variability of the image set. Similar memory decline with time for images of expertise as for everyday scenes further suggests that extended familiarity with an image is not a robust factor for visual memorability.

A Hardware Platform for Characterizing and Validating 1-Dimensional Optical Systems

DTIC Science & Technology

2014-09-01

principle laboratory experiments, a bread -board sensor and data collection system was created to gather fuze data to postprocess after the event...merely differentiates this bistable memory category from dynamic random access memory [RAM], which must be periodically refreshed to retain data.) A

True or false? Memory is differentially affected by stress-induced cortisol elevations and sympathetic activity at consolidation and retrieval.

PubMed

Smeets, Tom; Otgaar, Henry; Candel, Ingrid; Wolf, Oliver T

2008-11-01

Adrenal stress hormones released in response to acute stress may yield memory-enhancing effects when released post-learning and impairing effects at memory retrieval, especially for emotional memory material. However, so far these differential effects of stress hormones on the various memory phases for neutral and emotional memory material have not been demonstrated within one experiment. This study investigated whether, in line with their effects on true memory, stress and stress-induced adrenal stress hormones affect the encoding, consolidation, and retrieval of emotional and neutral false memories. Participants (N=90) were exposed to a stressor before encoding, during consolidation, before retrieval, or were not stressed and then were subjected to neutral and emotional versions of the Deese-Roediger-McDermott word list learning paradigm. Twenty-four hours later, recall of presented words (true recall) and non-presented critical lure words (false recall) was assessed. Results show that stress exposure resulted in superior true memory performance in the consolidation stress group and reduced true memory performance in the retrieval stress group compared to the other groups, predominantly for emotional words. These memory-enhancing and memory-impairing effects were strongly related to stress-induced cortisol and sympathetic activity measured via salivary alpha-amylase levels. Neutral and emotional false recall, on the other hand, was neither affected by stress exposure, nor related to cortisol and sympathetic activity following stress. These results demonstrate the importance of stress-induced hormone-related activity in enhancing memory consolidation and in impairing memory retrieval, in particular for emotional memory material.

Implementation of a fast digital optical matrix-vector multiplier using a holographic look-up table and residue arithmetic

NASA Technical Reports Server (NTRS)

Habiby, Sarry F.; Collins, Stuart A., Jr.

1987-01-01

The design and implementation of a digital (numerical) optical matrix-vector multiplier are presented. A Hughes liquid crystal light valve, the residue arithmetic representation, and a holographic optical memory are used to construct position coded optical look-up tables. All operations are performed in effectively one light valve response time with a potential for a high information density.

Implementation of a fast digital optical matrix-vector multiplier using a holographic look-up table and residue arithmetic.

PubMed

Habiby, S F; Collins, S A

1987-11-01

The design and implementation of a digital (numerical) optical matrix-vector multiplier are presented. A Hughes liquid crystal light valve, the residue arithmetic representation, and a holographic optical memory are used to construct position coded optical look-up tables. All operations are performed in effectively one light valve response time with a potential for a high information density.

Digital Holographic Memories

NASA Astrophysics Data System (ADS)

Hesselink, Lambertus; Orlov, Sergei S.

Optical data storage is a phenomenal success story. Since its introduction in the early 1980s, optical data storage devices have evolved from being focused primarily on music distribution, to becoming the prevailing data distribution and recording medium. Each year, billions of optical recordable and prerecorded disks are sold worldwide. Almost every computer today is shipped with a CD or DVD drive installed.

Quantum reading of a classical digital memory.

PubMed

Pirandola, Stefano

2011-03-04

We consider a basic model of digital memory where each cell is composed of a reflecting medium with two possible reflectivities. By fixing the mean number of photons irradiated over each memory cell, we show that a nonclassical source of light can retrieve more information than any classical source. This improvement is shown in the regime of few photons and high reflectivities, where the gain of information can be surprising. As a result, the use of quantum light can have nontrivial applications in the technology of digital memories, such as optical disks and barcodes.

Memory for light as a quantum process.

PubMed

Lobino, M; Kupchak, C; Figueroa, E; Lvovsky, A I

2009-05-22

We report complete characterization of an optical memory based on electromagnetically induced transparency. We recover the superoperator associated with the memory, under two different working conditions, by means of a quantum process tomography technique that involves storage of coherent states and their characterization upon retrieval. In this way, we can predict the quantum state retrieved from the memory for any input, for example, the squeezed vacuum or the Fock state. We employ the acquired superoperator to verify the nonclassicality benchmark for the storage of a Gaussian distributed set of coherent states.

Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Lei, Kai; Wang, Yang; Jiang, Minghui; Wu, Yiqun

2016-05-01

In this study, the controllable effective refractive index modulation of Sb70Te30 phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films by multiple femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Kai; Wang, Yang, E-mail: ywang@siom.ac.cn; Jiang, Minghui

2016-05-07

In this study, the controllable effective refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Timing the state of light with anomalous dispersion and a gradient echo memory

NASA Astrophysics Data System (ADS)

Clark, Jeremy B.

We study the effects of anomalous dispersion on the continuous-variable entanglement of EPR states (generated using four-wave mixing in 85 Rb) by sending one part of the state through a fast-light medium and measuring the state's quantum mutual information. We observe an advance in the maximum of the quantum mutual information between modes. In contrast, due to uncorrelated noise added by a small phase-insensitive gain, we do not observe any statistically significant advance in the leading edge of the mutual information. We also study the storage and retrieval of multiplexed optical signals in a Gradient Echo Memory (GEM) at relevant four-wave mixing frequencies in 85Rb. Temporal multiplexing capabilities are demonstrated by storing multiple classical images in the memory simultaneously and observing the expected first-in last-out order of recall without obvious cross-talk. We also develop a technique wherein selected portions of an image written into the memory can be spatially targeted for readout and erasure on demand. The effect of diffusion on the quality of the recalled images is characterized. Our results indicate that Raman-based atomic memories may serve as a flexible platform for the storage and retrieval of multiplexed optical signals.

Nonlinear optical memory for manipulation of orbital angular momentum of light.

PubMed

de Oliveira, R A; Borba, G C; Martins, W S; Barreiro, S; Felinto, D; Tabosa, J W R

2015-11-01

We report on the demonstration of a nonlinear optical memory (NOM) for storage and on-demand manipulation of orbital angular momentum (OAM) of light via higher-order nonlinear processes in cold cesium atoms. A spatially resolved phase-matching technique is used to select each order of the nonlinear susceptibility associated, respectively, with time-delayed four-, six-, and eight-wave mixing processes. For a specific configuration of the stored OAM of the incident beams, we demonstrated that the OAM of the retrieved beam can be manipulated according to the order of the nonlinear process chosen by the operator for reading out the NOM. This demonstration indicates new pathways for applications in classical and quantum information processing where OAM of light is used to encode optical information.

Continuous-variable quantum computing in optical time-frequency modes using quantum memories.

PubMed

Humphreys, Peter C; Kolthammer, W Steven; Nunn, Joshua; Barbieri, Marco; Datta, Animesh; Walmsley, Ian A

2014-09-26

We develop a scheme for time-frequency encoded continuous-variable cluster-state quantum computing using quantum memories. In particular, we propose a method to produce, manipulate, and measure two-dimensional cluster states in a single spatial mode by exploiting the intrinsic time-frequency selectivity of Raman quantum memories. Time-frequency encoding enables the scheme to be extremely compact, requiring a number of memories that are a linear function of only the number of different frequencies in which the computational state is encoded, independent of its temporal duration. We therefore show that quantum memories can be a powerful component for scalable photonic quantum information processing architectures.

Frequency set on systems

NASA Astrophysics Data System (ADS)

Wilby, W. A.; Brett, A. R. H.

Frequency set on techniques used in ECM applications include repeater jammers, frequency memory loops (RF and optical), coherent digital RF memories, and closed loop VCO set on systems. Closed loop frequency set on systems using analog phase and frequency locking are considered to have a number of cost and performance advantages. Their performance is discussed in terms of frequency accuracy, bandwidth, locking time, stability, and simultaneous signals. Some experimental results are presented which show typical locking performance. Future ECM systems might require a response to very short pulses. Acoustooptic and fiber-optic pulse stretching techniques can be used to meet such requirements.

Three-dimensional magnetic bubble memory system

NASA Technical Reports Server (NTRS)

Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor)

1994-01-01

A compact memory uses magnetic bubble technology for providing data storage. A three-dimensional arrangement, in the form of stacks of magnetic bubble layers, is used to achieve high volumetric storage density. Output tracks are used within each layer to allow data to be accessed uniquely and unambiguously. Storage can be achieved using either current access or field access magnetic bubble technology. Optical sensing via the Faraday effect is used to detect data. Optical sensing facilitates the accessing of data from within the three-dimensional package and lends itself to parallel operation for supporting high data rates and vector and parallel processing.

Hysteresis and memory factor of the Kerr effect in blue phases

NASA Astrophysics Data System (ADS)

Nordendorf, Gaby; Lorenz, Alexander; Hoischen, Andreas; Schmidtke, Jürgen; Kitzerow, Heinz; Wilkes, David; Wittek, Michael

2013-11-01

The performance of a polymer-stabilized blue phase system based on a nematic host with large dielectric anisotropy and a chiral dopant with high helical twisting power is investigated and the influence of the reactive monomer composition on the electro-optic characteristics is studied. Field-induced birefringence with a Kerr coefficient greater than 1 nm V-2 can be achieved in a large temperature range from well below 20 °C to above 55 °C. The disturbing influences of electro-optic hysteresis and memory effects can be reduced by diligent choice of the composition and appropriate electric addressing.

All linear optical quantum memory based on quantum error correction.

PubMed

Gingrich, Robert M; Kok, Pieter; Lee, Hwang; Vatan, Farrokh; Dowling, Jonathan P

2003-11-21

When photons are sent through a fiber as part of a quantum communication protocol, the error that is most difficult to correct is photon loss. Here we propose and analyze a two-to-four qubit encoding scheme, which can recover the loss of one qubit in the transmission. This device acts as a repeater, when it is placed in series to cover a distance larger than the attenuation length of the fiber, and it acts as an optical quantum memory, when it is inserted in a fiber loop. We call this dual-purpose device a "quantum transponder."

Memory retrieval of everyday information under stress.

PubMed

Stock, Lisa-Marie; Merz, Christian J

2018-07-01

Psychosocial stress is known to crucially influence learning and memory processes. Several studies have already shown an impairing effect of elevated cortisol concentrations on memory retrieval. These studies mainly used learning material consisting of stimuli with a limited ecological validity. When using material with a social contextual component or with educational relevant material both impairing and enhancing stress effects on memory retrieval could be observed. In line with these latter studies, the present experiment also used material with a higher ecological validity (a coherent text consisting of daily relevant numeric, figural and verbal information). After encoding, retrieval took place 24 h later after exposure to psychosocial stress or a control procedure (20 healthy men per group). The stress group was further subdivided into cortisol responders and non-responders. Results showed a significantly impaired retrieval of everyday information in non-responders compared to responders and controls. Altogether, the present findings indicate the need of an appropriate cortisol response for the successful memory retrieval of everyday information. Thus, the present findings suggest that cortisol increases - contrary to a stressful experience per se - seem to play a protective role for retrieving everyday information. Additionally, it could be speculated that the previously reported impairing stress effects on memory retrieval might depend on the used learning material. Copyright © 2018 Elsevier Inc. All rights reserved.

Electro-Optical Characterization of Bistable Smectic A Liquid Crystal Displays

NASA Astrophysics Data System (ADS)

Buyuktanir, Ebru Aylin

My dissertation focuses the characterization and optimization of the electro-optical properties of smectic A (SmA) based liquid crystal (LC) displays. I present the development of robust and flexible bistable SmA LC displays utilizing polymer dispersed liquid crystal (PDLC) technology. The SmA PDLC displays produced on plastic substrates present electrically reversible memory, high contrast ratio, paper-like sunlight readability, and wide viewing angle characteristics. In order to optimize the SmA PDLC display, I investigated polymerization conditions, such as polymer concentration effect, polymerization temperature, and UV-light intensity variations. I characterized the electro-optical responses-such as static-response, time-response, threshold characteristics, and contrast ratio values' of the optimized SmA PDLC display and compared them to those of the pure SmA LC. The best electro-optical performance of SmA PDLC formulation was obtained using the combination of low mW/cm 2 and high mW/cm2 UV-light curing intensity. The contrast ratio of the optimum SmA PDLC at a 5o collection angle was 83% of that of the pure SmA material on plastic substrates. I fabricated 2.5 x 2.5 in., 4 x 4 in., and 6 x 6 in. sized monochrome flexible SmA PDLC displays, as well as red, yellow, and fluorescent dyes colored SmA PDLC displays on plastic substrates. The electro-optic performance of the bistable SmA LC display consisting of a patterned field-induced polymer wall infrastructure was also studied and compared to those of pure SmA material. I found that the contrast ratio of the SmA LC encapsulated between polymer walls was much greater than that of the SmA PDLC system, approaching the contrast ratio value of the pure SmA material. I also improved the electro-optical characteristics of bistable SmA LC displays by adding ferroparticles into the system. Finally, I illustrated the unique capabilities of polarized confocal Raman microscopy (CRM) to resolve the orientational order of SmA LCs in three-dimension by investigating the characteristic vibrational bands of LC molecules. CRM provides a precise characterization of the molecular order at different depths of the LC films. I examined the director patterns of focal conic defects of smectic A LC, colloidal smectic A LC systems, and the field-oriented nematic LC in the horizontal and vertical planes.

Validation Test Report for the Automated Optical Processing System (AOPS) Version 4.8

DTIC Science & Technology

2013-06-28

be familiar with UNIX; BASH shell programming; and remote sensing, particularly regarding computer processing of satellite data. The system memory ...and storage requirements are difficult to gauge. The amount of memory needed is dependent upon the amount and type of satellite data you wish to...process; the larger the area, the larger the memory requirement. For example, the entire Atlantic Ocean will require more processing power than the

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

NASA Technical Reports Server (NTRS)

Besser, P. J.

1976-01-01

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers.

Grain Size of Recall Practice for Lengthy Text Material: Fragile and Mysterious Effects on Memory

ERIC Educational Resources Information Center

Wissman, Kathryn T.; Rawson, Katherine A.

2015-01-01

The current research evaluated the extent to which the grain size of recall practice for lengthy text material affects recall during practice and subsequent memory. The "grain size hypothesis" states that a smaller vs. larger grain size will increase retrieval success during practice that in turn will enhance subsequent memory for…

The Use of Organizational Strategies to Improve Memory for Prose Passages.

ERIC Educational Resources Information Center

Byrd, Mark

1986-01-01

Examined effects of enforced organizational strategies on the memory of older adults for textual material. Young and old adults sorted scrambled sentences of a prose passage into the correct order. When older adults were required to make an in-depth analysis to sort material, their incidental memory for textual information was approximately equal…

EDITORIAL: Photorefractive materials and effects for photonics

NASA Astrophysics Data System (ADS)

Vlad, V. I.; Fazio, E.; Damzen, M.

2003-11-01

This special issue of Journal of Optics A: Pure and Applied Optics is devoted to a mature field of nonlinear optics: photorefractive materials and effects for photonics. Photorefractivity was discovered long time ago by A Ashkin et al in 1966 and since then much work has been performed to characterize the phenomenon and to apply it. Nevertheless, research in this field remain very active and productive, in both basic and applied directions. Some leading groups worldwide present their most up-to-date investigations of photorefractive materials and effects, as well as their applications in photonics. Thus, the papers in this issue report new results in three directions: photorefractive material researches, wave propagation (particularly solitons) through these nonlinear optical materials, and various applications and devices using photorefractive effects. The challenging goal of photorefractive material research is to find sensitive and fast materials for information transmission and processing. P M Johansen studies the fundamental problem of space--charge field formation in photorefractives. V Marinova et al show that light-induced properties of Ru-doped Bi12TiO20 (BTO) crystals has an extended sensitivity in the near infrared region. H A Al-Attar and O Taqatqa introduce a new photorefractive polymer composite for their interesting properties for optical data storage. R Ramos-Garcia et al perform measurements of absorption coefficient and refractive index changes in photorefractive quantum wells of GaAs. A Radoua et al characterize by two-wave mixing the photorefractive Ba0.77Ca0.23TiO3:Rh crystals (BCT) at 1.06 mum, and M K Balakirev et al study the photorefractive effect upon all optical poling of glass. Wave propagation and solitons are intensively studied in photorefractive crystals due to the possibility of obtaining steady-state spatial solitons, dynamic waveguiding and soliton interactions at low laser intensity. W Ramadan et al introduce a new procedure to obtain stationary self-confined beams at non-absorbed wavelengths in Bi12SiO20 (BSO). Two groups, C Weilnau and C Denz and Z Chen et al, investigate photorefractive solitons using partially coherent light beams. Waveguiding and interactions in photorefractive soliton arrays are demonstrated by R Delgado Macuil and M D Iturbe Castillo and by D Träger et al. V Matusevich et al show some aspects of fanning, self-focusing and self-defocusing in a photorefractive BCT crystal. Applications and devices are developing in hologram recording and storage, image processing, interferometry and optical phase conjugation in photorefractive materials. G Berger et al record non-volatile volume holograms in bismuth tellurite crystals. I de Oliveira and J Frejlich perform diffraction efficiency measurement in photorefractive thick volume holograms. Holography with photorefractive multiple quantum well devices is used by C Dunsby et al in high-speed wide-field coherence-gated imaging. A photorefractive fringe-locked running hologram is analysed by M C Barbosa and J Frejlich in three-dimensional space. Detection of small in-plane vibrations using the polarization self-modulation effect in GaP is performed by Y Iida et al. E Weidner et al design an interferometric camera with a wavefront buffer memory using a photorefractive crystal as the active medium. R Nicolaus et al investigate and optimize a pulsed ultraviolet image amplifier within a micro-marking system. C Gu et al apply unconventional photorefractive materials in fibre optic devices. Photorefractive phase conjugate mirrors are used by T Omatsu et al to obtain multi-watt picosecond pulses from a diode-pumped Nd:YVO4 amplifier with a diffraction-limited spatial profile, and V M Petrov et al design optical on-line controllable filters based on photorefractive crystals. We hope that this special issue of Journal of Optics A: Pure and Applied Optics will reflect the intense activity in the field of photorefractivity and will demonstrate to readers some of the actual directions of research in these topics. We express our full appreciation to the authors and we would like to thank the paper reviewers for their important role in the paper selection process. We acknowledge the Publisher, Claire Bedrock, and the technical staff of the journal for their support, dedication and energy, which made feasible this special issue.

Nanometric summation architecture based on optical near-field interaction between quantum dots.

PubMed

Naruse, Makoto; Miyazaki, Tetsuya; Kubota, Fumito; Kawazoe, Tadashi; Kobayashi, Kiyoshi; Sangu, Suguru; Ohtsu, Motoichi

2005-01-15

A nanoscale data summation architecture is proposed and experimentally demonstrated based on the optical near-field interaction between quantum dots. Based on local electromagnetic interactions between a few nanometric elements via optical near fields, we can combine multiple excitations at a certain quantum dot, which allows construction of a summation architecture. Summation plays a key role for content-addressable memory, which is one of the most important functions in optical networks.

The effect of nonadiabaticity on the efficiency of quantum memory based on an optical cavity

NASA Astrophysics Data System (ADS)

Veselkova, N. G.; Sokolov, I. V.

2017-07-01

Quantum efficiency is an important characteristic of quantum memory devices that are aimed at recording the quantum state of light signals and its storing and reading. In the case of memory based on an ensemble of cold atoms placed in an optical cavity, the efficiency is restricted, in particular, by relaxation processes in the system of active atomic levels. We show how the effect of the relaxation on the quantum efficiency can be determined in a regime of the memory usage in which the evolution of signals in time is not arbitrarily slow on the scale of the field lifetime in the cavity and when the frequently used approximation of the adiabatic elimination of the quantized cavity mode field cannot be applied. Taking into account the effect of the nonadiabaticity on the memory quality is of interest in view of the fact that, in order to increase the field-medium coupling parameter, a higher cavity quality factor is required, whereas storing and processing of sequences of many signals in the memory implies that their duration is reduced. We consider the applicability of the well-known efficiency estimates via the system cooperativity parameter and estimate a more general form. In connection with the theoretical description of the memory of the given type, we also discuss qualitative differences in the behavior of a random source introduced into the Heisenberg-Langevin equations for atomic variables in the cases of a large and a small number of atoms.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects

PubMed Central

Kim, Gyungock; Park, Hyundai; Joo, Jiho; Jang, Ki-Seok; Kwack, Myung-Joon; Kim, Sanghoon; Gyoo Kim, In; Hyuk Oh, Jin; Ae Kim, Sun; Park, Jaegyu; Kim, Sanggi

2015-01-01

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications. PMID:26061463

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Deoxyribonucleic acid (DNA)-based optical materials

NASA Astrophysics Data System (ADS)

Grote, James G.; Heckman, Emily M.; Hagen, Joshua A.; Yaney, Perry P.; Subramanyam, Guru; Clarson, Stephen J.; Diggs, Darnell E.; Nelson, Robert L.; Zetts, John S.; Hopkins, F. Kenneth; Ogata, Naoya

2004-12-01

Optical materials for waveguiding applications must possess the desired optical and electromagnetic properties for optimal device performance. Purified deoxyribonucleic acid (DNA), derived from salmon sperm, has been investigated for use as an optical waveguide material. In this paper we present the materials processing and optical and electromagnetic characterization of this purified DNA to render a high quality, low loss optical waveguide material.

What Drives False Memories in Psychopathology? A Case for Associative Activation

PubMed Central

Otgaar, Henry; Muris, Peter; Howe, Mark L.; Merckelbach, Harald

2017-01-01

In clinical and court settings, it is imperative to know whether posttraumatic stress disorder (PTSD) and depression may make people susceptible to false memories. We conducted a review of the literature on false memory effects in participants with PTSD, a history of trauma, or depression. When emotional associative material was presented to these groups, their levels of false memory were raised relative to those in relevant comparison groups. This difference did not consistently emerge when neutral or nonassociative material was presented. Our conclusion is supported by a quantitative comparison of effect sizes between studies using emotional associative or neutral, nonassociative material. Our review suggests that individuals with PTSD, a history of trauma, or depression are at risk for producing false memories when they are exposed to information that is related to their knowledge base. PMID:29170722

What Drives False Memories in Psychopathology? A Case for Associative Activation.

PubMed

Otgaar, Henry; Muris, Peter; Howe, Mark L; Merckelbach, Harald

2017-11-01

In clinical and court settings, it is imperative to know whether posttraumatic stress disorder (PTSD) and depression may make people susceptible to false memories. We conducted a review of the literature on false memory effects in participants with PTSD, a history of trauma, or depression. When emotional associative material was presented to these groups, their levels of false memory were raised relative to those in relevant comparison groups. This difference did not consistently emerge when neutral or nonassociative material was presented. Our conclusion is supported by a quantitative comparison of effect sizes between studies using emotional associative or neutral, nonassociative material. Our review suggests that individuals with PTSD, a history of trauma, or depression are at risk for producing false memories when they are exposed to information that is related to their knowledge base.

Faces are special but not too special: Spared face recognition in amnesia is based on familiarity

PubMed Central

Aly, Mariam; Knight, Robert T.; Yonelinas, Andrew P.

2014-01-01

Most current theories of human memory are material-general in the sense that they assume that the medial temporal lobe (MTL) is important for retrieving the details of prior events, regardless of the specific type of materials. Recent studies of amnesia have challenged the material-general assumption by suggesting that the MTL may be necessary for remembering words, but is not involved in remembering faces. We examined recognition memory for faces and words in a group of amnesic patients, which included hypoxic patients and patients with extensive left or right MTL lesions. Recognition confidence judgments were used to plot receiver operating characteristics (ROCs) in order to more fully quantify recognition performance and to estimate the contributions of recollection and familiarity. Consistent with the extant literature, an analysis of overall recognition accuracy showed that the patients were impaired at word memory but had spared face memory. However, the ROC analysis indicated that the patients were generally impaired at high confidence recognition responses for faces and words, and they exhibited significant recollection impairments for both types of materials. Familiarity for faces was preserved in all patients, but extensive left MTL damage impaired familiarity for words. These results suggest that face recognition may appear to be spared because performance tends to rely heavily on familiarity, a process that is relatively well preserved in amnesia. The findings challenge material-general theories of memory, and suggest that both material and process are important determinants of memory performance in amnesia, and different types of materials may depend more or less on recollection and familiarity. PMID:20833190

Incorporation of Fiber Bragg Sensors for Shape Memory Polyurethanes Characterization.

PubMed

Alberto, Nélia; Fonseca, Maria A; Neto, Victor; Nogueira, Rogério; Oliveira, Mónica; Moreira, Rui

2017-11-11

Shape memory polyurethanes (SMPUs) are thermally activated shape memory materials, which can be used as actuators or sensors in applications including aerospace, aeronautics, automobiles or the biomedical industry. The accurate characterization of the memory effect of these materials is therefore mandatory for the technology's success. The shape memory characterization is normally accomplished using mechanical testing coupled with a heat source, where a detailed knowledge of the heat cycle and its influence on the material properties is paramount but difficult to monitor. In this work, fiber Bragg grating (FBG) sensors were embedded into SMPU samples aiming to study and characterize its shape memory effect. The samples were obtained by injection molding, and the entire processing cycle was successfully monitored, providing a process global quality signature. Moreover, the integrity and functionality of the FBG sensors were maintained during and after the embedding process, demonstrating the feasibility of the technology chosen for the purpose envisaged. The results of the shape memory effect characterization demonstrate a good correlation between the reflected FBG peak with the temperature and induced strain, proving that this technology is suitable for this particular application.

Incorporation of Fiber Bragg Sensors for Shape Memory Polyurethanes Characterization

PubMed Central

Nogueira, Rogério; Moreira, Rui

2017-01-01

Shape memory polyurethanes (SMPUs) are thermally activated shape memory materials, which can be used as actuators or sensors in applications including aerospace, aeronautics, automobiles or the biomedical industry. The accurate characterization of the memory effect of these materials is therefore mandatory for the technology’s success. The shape memory characterization is normally accomplished using mechanical testing coupled with a heat source, where a detailed knowledge of the heat cycle and its influence on the material properties is paramount but difficult to monitor. In this work, fiber Bragg grating (FBG) sensors were embedded into SMPU samples aiming to study and characterize its shape memory effect. The samples were obtained by injection molding, and the entire processing cycle was successfully monitored, providing a process global quality signature. Moreover, the integrity and functionality of the FBG sensors were maintained during and after the embedding process, demonstrating the feasibility of the technology chosen for the purpose envisaged. The results of the shape memory effect characterization demonstrate a good correlation between the reflected FBG peak with the temperature and induced strain, proving that this technology is suitable for this particular application. PMID:29137136

Material-specific difficulties in episodic memory tasks in mild traumatic brain injury.

PubMed

Tsirka, Vassiliki; Simos, Panagiotis; Vakis, Antonios; Vourkas, Michael; Arzoglou, Vasileios; Syrmos, Nikolaos; Stavropoulos, Stavros; Micheloyannis, Sifis

2010-03-01

The study examines acute, material-specific secondary memory performance in 26 patients with mild traumatic brain injury (MTBI) and 26 healthy controls, matched on demographic variables and indexes of crystallized intelligence. Neuropsychological tests were used to evaluate primary and secondary memory, executive functions, and verbal fluency. Participants were also tested on episodic memory tasks involving words, pseudowords, pictures of common objects, and abstract kaleidoscopic images. Patients showed reduced performance on episodic memory measures, and on tasks associated with visuospatial processing and executive function (Trail Making Test part B, semantic fluency). Significant differences between groups were also noted for correct rejections and response bias on the kaleidoscope task. MTBI patients' reduced performance on memory tasks for complex, abstract stimuli can be attributed to a dysfunction in the strategic component of memory process.

Radiologists remember mountains better than radiographs, or do they?

PubMed Central

Evans, Karla K.; Marom, Edith M.; Godoy, Myrna C. B.; Palacio, Diana; Sagebiel, Tara; Cuellar, Sonia Betancourt; McEntee, Mark; Tian, Charles; Brennan, Patrick C.; Haygood, Tamara Miner

2015-01-01

Abstract. Expertise with encoding material has been shown to aid long-term memory for that material. It is not clear how relevant this expertise is for image memorability (e.g., radiologists’ memory for radiographs), and how robust over time. In two studies, we tested scene memory using a standard long-term memory paradigm. One compared the performance of radiologists to naïve observers on two image sets, chest radiographs and everyday scenes, and the other radiologists’ memory with immediate as opposed to delayed recognition tests using musculoskeletal radiographs and forest scenes. Radiologists’ memory was better than novices for images of expertise but no different for everyday scenes. With the heterogeneity of image sets equated, radiologists’ expertise with radiographs afforded them better memory for the musculoskeletal radiographs than forest scenes. Enhanced memory for images of expertise disappeared over time, resulting in chance level performance for both image sets after weeks of delay. Expertise with the material is important for visual memorability but not to the same extent as idiosyncratic detail and variability of the image set. Similar memory decline with time for images of expertise as for everyday scenes further suggests that extended familiarity with an image is not a robust factor for visual memorability. PMID:26870748

Attention and Material-Specific Memory in Children with Lateralized Epilepsy

ERIC Educational Resources Information Center

Engle, Jennifer A.; Smith, Mary Lou

2010-01-01

Epilepsy is frequently associated with attention and memory problems. In adults, lateralization of seizure focus impacts the type of memory affected (left-sided lesions primarily impact verbal memory, while right-sided lesions primarily impact visual memory), but the relationship between seizure focus and the nature of the memory impairment is…

The permittivity and refractive index measurements of doped barium titanate (BT-BCN)

NASA Astrophysics Data System (ADS)

Meeker, Michael A.; Kundu, Souvik; Maurya, Deepam; Kang, Min-Gyu; Sosa, Alejandro; Mudiyanselage, Rathsara R. H. H.; Clavel, Michael; Gollapudi, Sreenivasulu; Hudait, Mantu K.; Priya, Shashank; Khodaparast, Giti A.

2017-11-01

While piezoelectric- ferroelectric materials offer great potential for nonvolatile random access memory, most commonly implemented ferroelectrics contain lead which imposes a challenge in meeting environmental regulations. One promising candidate for lead-free, ferroelectric material based memory is (1 - x) BaTiO3 - xBa(Cu1 / 3 Nb2 / 3) O3 (BT-BCN), x = 0.025 . The samples studied here were grown on a Si substrate with an HfO2 buffer layer, thereby preventing the interdiffusion of BT-BTCN into Si. This study provides further insight into the physical behavior of BT-BCN that will strengthen the foundation for developing switching devices. The sample thicknesses ranged from 1.5 to 120 nm, and piezoelectric force microscopy was employed in order to understand the local ferroelectric behaviors. Dielectric constant as a function of frequency demonstrated enhanced frequency dispersion indicating the polar nature of the composition. The relative permittivity was found to change significantly with varying bias voltage and exhibited a tunability of 82%. The difference in the peak position during up and down sweeps is due to the presence of the spontaneous polarization. Furthermore, reflectometry was performed to determine the refractive index of samples with differing thicknesses. Our results demonstrate that refractive indices are similar to that of barium titanate. This is a promising result indicating that improved ferroelectric properties are obtained without compromising the optical properties.

Differences in visual vs. verbal memory impairments as a result of focal temporal lobe damage in patients with traumatic brain injury.

PubMed

Ariza, Mar; Pueyo, Roser; Junqué, Carme; Mataró, María; Poca, María Antonia; Mena, Maria Pau; Sahuquillo, Juan

2006-09-01

The aim of the present study was to determine whether the type of lesion in a sample of moderate and severe traumatic brain injury (TBI) was related to material-specific memory impairment. Fifty-nine patients with TBI were classified into three groups according to whether the site of the lesion was right temporal, left temporal or diffuse. Six-months post-injury, visual (Warrington's Facial Recognition Memory Test and Rey's Complex Figure Test) and verbal (Rey's Auditory Verbal Learning Test) memories were assessed. Visual memory deficits assessed by facial memory were associated with right temporal lobe lesion, whereas verbal memory performance assessed with a list of words was related to left temporal lobe lesion. The group with diffuse injury showed both verbal and visual memory impairment. These results suggest a material-specific memory impairment in moderate and severe TBI after focal temporal lesions and a non-specific memory impairment after diffuse damage.

Effect of strain on the Curie temperature and band structure of low-dimensional SbSI

NASA Astrophysics Data System (ADS)

Wang, Yiping; Hu, Yang; Chen, Zhizhong; Guo, Yuwei; Wang, Dong; Wertz, Esther A.; Shi, Jian

2018-04-01

Photoferroelectric materials show great promise for developing alternative photovoltaics and photovoltaic-type non-volatile memories. However, the localized nature of the d orbital and large bandgap of most natural photoferroelectric materials lead to low electron/hole mobility and limit the realization of technologically practical devices. Antimony sulpho-iodide (SbSI) is a photoferroelectric material which is expected to have high electron/hole mobility in the ferroelectric state due to its non-local band dispersion and narrow bandgap. However, SbSI exhibits the paraelectric state close to room temperature. In this report, as a proof of concept, we explore the possibility to stabilize the SbSI ferroelectric phase above room temperature via mechanical strain engineering. We synthesized thin low-dimensional crystals of SbSI by chemical vapor deposition, confirmed its crystal structure with electron diffraction, studied its optical properties via photoluminescence spectroscopy and time-resolved photoluminescence spectroscopy, and probed its phase transition using temperature-dependent steady-state photoluminescence spectroscopy. We found that introducing external mechanical strain to these low-dimensional crystals may lead to an increase in their Curie temperature (by ˜60 K), derived by the strain-modified optical phase transition in SbSI and quantified by Kern formulation and Landau theory. The study suggests that strain engineering could be an effective way to stabilize the ferroelectric phase of SbSI at above room temperature, providing a solution enabling its application for technologically useful photoferroelectric devices.

Up-to-date state of storage techniques used for large numerical data files

NASA Technical Reports Server (NTRS)

Chlouba, V.

1975-01-01

Methods for data storage and output in data banks and memory files are discussed along with a survey of equipment available for this. Topics discussed include magnetic tapes, magnetic disks, Terabit magnetic tape memory, Unicon 690 laser memory, IBM 1360 photostore, microfilm recording equipment, holographic recording, film readers, optical character readers, digital data storage techniques, and photographic recording. The individual types of equipment are summarized in tables giving the basic technical parameters.

The Flynn effect and memory function.

PubMed

Baxendale, Sallie

2010-08-01

The Flynn effect refers to the steady increase in IQ that appears to date back at least to the inception of modern-day IQ tests. This study examined the possible Flynn effects on clinical memory tests involving the learning and recall of verbal and nonverbal material. Comparisons of the age-related norms on the list learning and design learning tasks from the Adult Memory and Information Processing Battery (AMIPB), published in 1985, and its successor, the BIRT (Brain Injury Rehabilitation Trust) Memory and Information Processing Battery (BMIPB) published in 2007, indicate that there is a significant Flynn effect on tests of memory function. This effect appears to be material specific with statistically significant improvements in all scores on tests involving the learning and recall of visual material in every age range evident over a 22-year period. Verbal memory abilities appear to be relatively stable with no significant differences between the scores in the majority of age ranges. The ramifications for the clinical interpretation of these tests are discussed.

Self-assembled phase-change nanowire for nonvolatile electronic memory

NASA Astrophysics Data System (ADS)

Jung, Yeonwoong

One of the most important subjects in nanosciences is to identify and exploit the relationship between size and structural/physical properties of materials and to explore novel material properties at a small-length scale. Scale-down of materials is not only advantageous in realizing miniaturized devices but nanometer-sized materials often exhibit intriguing physical/chemical properties that greatly differ from their bulk counterparts. This dissertation studies self-assembled phase-change nanowires for future nonvolatile electronic memories, mainly focusing on their size-dependent memory switching properties. Owing to the one-dimensional, unique geometry coupled with the small and tunable sizes, bottom-designed nanowires offer great opportunities in terms for both fundamental science and practical engineering perspectives, which would be difficult to realize in conventional top-down based approaches. We synthesized chalcogenide phase-change nanowires of different compositions and sizes, and studied their electronic memory switching owing to the structural change between crystalline and amorphous phases. In particular, we investigated nanowire size-dependent memory switching parameters, including writing current, power consumption, and data retention times, as well as studying composition-dependent electronic properties. The observed size and composition-dependent switching and recrystallization kinetics are explained based on the heat transport model and heterogeneous nucleation theories, which help to design phase-change materials with better properties. Moreover, we configured unconventional heterostructured phase-change nanowire memories and studied their multiple memory states in single nanowire devices. Finally, by combining in-situ/ex-situ electron microscopy techniques and electrical measurements, we characterized the structural states involved in electrically-driven phase-change in order to understand the atomistic mechanism that governs the electronic memory switching through phase-change.

Fabrication and characterization of shape memory polymers at small-scales

NASA Astrophysics Data System (ADS)

Wornyo, Edem

The objective of this research is to thoroughly investigate the shape memory effect in polymers, characterize, and optimize these polymers for applications in information storage systems. Previous research effort in this field concentrated on shape memory metals for biomedical applications such as stents. Minimal work has been done on shape memory polymers; and the available work on shape memory polymers has not characterized the behaviors of this category of polymers fully. Copolymer shape memory materials based on diethylene glycol dimethacrylate (DEGDMA) crosslinker, and tert butyl acrylate (tBA) monomer are designed. The design encompasses a careful control of the backbone chemistry of the materials. Characterization methods such as dynamic mechanical analysis (DMA), differential scanning calorimetry (DSC); and novel nanoscale techniques such as atomic force microscopy (AFM), and nanoindentation are applied to this system of materials. Designed experiments are conducted on the materials to optimize spin coating conditions for thin films. Furthermore, the recovery, a key for the use of these polymeric materials for information storage, is examined in detail with respect to temperature. In sum, the overarching objectives of the proposed research are to: (i) Design shape memory polymers based on polyethylene glycol dimethacrylate (PEGDMA) and diethylene glycol dimethacrylate (DEGDMA) crosslinkers, 2-hydroxyethyl methacrylate (HEMA) and tert-butyl acrylate monomer (tBA). (ii) Utilize dynamic mechanical analysis (DMA) to comprehend the thermomechanical properties of shape memory polymers based on DEGDMA and tBA. (iii) Utilize nanoindentation and atomic force microscopy (AFM) to understand the nanoscale behavior of these SMPs, and explore the strain storage and recovery of the polymers from a deformed state. (iv) Study spin coating conditions on thin film quality with designed experiments. (iv) Apply neural networks and genetic algorithms to optimize these systems.

Shape memory alloys: a state of art review

NASA Astrophysics Data System (ADS)

Naresh, C.; Bose, P. S. C.; Rao, C. S. P.

2016-09-01

Shape memory alloys (SMAs) are the special materials that have the ability to return to a predetermined shape when heated. When this alloy is in below transformation temperature it undergoes low yield strength and will deform easily into any new shape which it will retain, if this alloy is heated above its transformation temperature it changes its crystal lattice structure which returns to its real shape. SMAs are remarkably different from other materials are primarily due to shape memory effect (SME) and pseudoelasticity which are related with the specific way the phase transformation occurs, biocompatibility, high specific strength, high corrosion resistance, high wear resistance and high anti-fatigue property. SMA are used in many applications such as aerospace, medical, automobile, tubes, controllers for hot water valves in showers, petroleum industry, vibration dampers, ball bearings, sensors, actuators, miniature grippers, micro valves, pumps, landing gears, eye glass frames, Material for helicopter blades, sprinklers in fine alarm systems packaging devices for electronic materials, dental materials, etc. This paper focuses on introducing shape memory alloy and their applications in past, present and in future, also revealed the concept and mechanism of shape memory materials for a particular requirement. Properties of SMAs, behaviour and characteristics of SMA, summary of recent advances and new application opportunities are also discussed.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Optical neural networks based on holographic correlators

NASA Astrophysics Data System (ADS)

Sokolov, V. K.; Shubnikov, E. I.

1995-10-01

The three most important models of neural networks — a bidirectional associative memory, Hopfield networks, and adaptive resonance networks — are used as examples to show that a holographic correlator has its place in the neural computing paradigm.

Imaging System Model Crammed Into A 32K Microcomputer

NASA Astrophysics Data System (ADS)

Tyson, Robert K.

1986-12-01

An imaging system model, based upon linear systems theory, has been developed for a microcomputer with less than 32K of free random access memory (RAM). The model includes diffraction effects of the optics, aberrations in the optics, and atmospheric propagation transfer functions. Variables include pupil geometry, magnitude and character of the aberrations, and strength of atmospheric turbulence ("seeing"). Both coherent and incoherent image formation can be evaluated. The techniques employed for crowding the model into a very small computer will be discussed in detail. Simplifying assumptions for the diffraction and aberration phenomena will be shown along with practical considerations in modeling the optical system. Particular emphasis is placed on avoiding inaccuracies in modeling the pupil and the associated optical transfer function knowing limits on spatial frequency content and resolution. Memory and runtime constraints are analyzed stressing the efficient use of assembly language Fourier transform routines, disk input/output, and graphic displays. The compromises between computer time, limited RAM, and scientific accuracy will be given with techniques for balancing these parameters for individual needs.

Programmable fuzzy associative memory processor

NASA Astrophysics Data System (ADS)

Shao, Lan; Liu, Liren; Li, Guoqiang

1996-02-01

An optical system based on the method of spatial area-coding and multiple image scheme is proposed for fuzzy associative memory processing. Fuzzy maximum operation is accomplished by a ferroelectric liquid crystal PROM instead of a computer-based approach. A relative subsethood is introduced here to be used as a criterion for the recall evaluation.

Optimizing inhomogeneous spin ensembles for quantum memory

NASA Astrophysics Data System (ADS)

Bensky, Guy; Petrosyan, David; Majer, Johannes; Schmiedmayer, Jörg; Kurizki, Gershon

2012-07-01

We propose a method to maximize the fidelity of quantum memory implemented by a spectrally inhomogeneous spin ensemble. The method is based on preselecting the optimal spectral portion of the ensemble by judiciously designed pulses. This leads to significant improvement of the transfer and storage of quantum information encoded in the microwave or optical field.

Ultralow bias power all-optical photonic crystal memory realized with systematically tuned L3 nanocavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuramochi, Eiichi, E-mail: kuramochi.eiichi@lab.ntt.co.jp; Nozaki, Kengo; Shinya, Akihiko

2015-11-30

An InP photonic crystal nanocavity with an embedded InGaAsP active region is a unique technology that has realized an all-optical memory with a sub-micro-watt operating power and limitless storage time. In this study, we employed an L3 design with systematic multi-hole tuning, which realized a higher loaded Q factor (>40 000) and a lower mode volume (0.9 μm{sup 3}) than a line-defect-based buried-heterostructure nanocavity (16 000 and 2.2 μm{sup 3}). Excluding the active region realized a record loaded Q factor (210 000) in all for InP-based nanocavities. The minimum bias power for bistable memory operation was reduced to 2.3 ± 0.3 nW, which is about 1/10 ofmore » the previous record of 30 nW. This work further established the capability of a bistable nanocavity memory for use in future ultralow-power-consumption on-chip integrated photonics.« less

Emerging Nanophotonic Applications Explored with Advanced Scientific Parallel Computing

NASA Astrophysics Data System (ADS)

Meng, Xiang

The domain of nanoscale optical science and technology is a combination of the classical world of electromagnetics and the quantum mechanical regime of atoms and molecules. Recent advancements in fabrication technology allows the optical structures to be scaled down to nanoscale size or even to the atomic level, which are far smaller than the wavelength they are designed for. These nanostructures can have unique, controllable, and tunable optical properties and their interactions with quantum materials can have important near-field and far-field optical response. Undoubtedly, these optical properties can have many important applications, ranging from the efficient and tunable light sources, detectors, filters, modulators, high-speed all-optical switches; to the next-generation classical and quantum computation, and biophotonic medical sensors. This emerging research of nanoscience, known as nanophotonics, is a highly interdisciplinary field requiring expertise in materials science, physics, electrical engineering, and scientific computing, modeling and simulation. It has also become an important research field for investigating the science and engineering of light-matter interactions that take place on wavelength and subwavelength scales where the nature of the nanostructured matter controls the interactions. In addition, the fast advancements in the computing capabilities, such as parallel computing, also become as a critical element for investigating advanced nanophotonic devices. This role has taken on even greater urgency with the scale-down of device dimensions, and the design for these devices require extensive memory and extremely long core hours. Thus distributed computing platforms associated with parallel computing are required for faster designs processes. Scientific parallel computing constructs mathematical models and quantitative analysis techniques, and uses the computing machines to analyze and solve otherwise intractable scientific challenges. In particular, parallel computing are forms of computation operating on the principle that large problems can often be divided into smaller ones, which are then solved concurrently. In this dissertation, we report a series of new nanophotonic developments using the advanced parallel computing techniques. The applications include the structure optimizations at the nanoscale to control both the electromagnetic response of materials, and to manipulate nanoscale structures for enhanced field concentration, which enable breakthroughs in imaging, sensing systems (chapter 3 and 4) and improve the spatial-temporal resolutions of spectroscopies (chapter 5). We also report the investigations on the confinement study of optical-matter interactions at the quantum mechanical regime, where the size-dependent novel properties enhanced a wide range of technologies from the tunable and efficient light sources, detectors, to other nanophotonic elements with enhanced functionality (chapter 6 and 7).

Optical memory development. Volume 3: The membrane light value page composer

NASA Technical Reports Server (NTRS)

Cosentino, L. S.; Nagle, E. M.; Stewart, W. C.

1972-01-01

The feasibility of producing a page composer for optical memory systems using thin, deformable, membrane-mirror elements as light valves was investigated. The electromechanical and optical performances of such elements were determined both analytically and experimentally. It was found that fast switching (approximately 10 microseconds), high-contrast (10 or greater), fatigue-free operation over missions of cycles, and efficient utilization of input light could be obtained with membrane light valves. Several arrays of 64 elements were made on substrates with feedthroughs, allowing access to individual elements from the backside of the substrate. Single light valves on such arrays were successfully operated with the transistors designed and produced for selection and storage at each bit location. This simulated the operation of a prototype page composer with semiconductor chips beam-lead bonded to the back of the substrate.

High-capacity optical long data memory based on enhanced Young's modulus in nanoplasmonic hybrid glass composites.

PubMed

Zhang, Qiming; Xia, Zhilin; Cheng, Yi-Bing; Gu, Min

2018-03-22

Emerging as an inevitable outcome of the big data era, long data are the massive amount of data that captures changes in the real world over a long period of time. In this context, recording and reading the data of a few terabytes in a single storage device repeatedly with a century-long unchanged baseline is in high demand. Here, we demonstrate the concept of optical long data memory with nanoplasmonic hybrid glass composites. Through the sintering-free incorporation of nanorods into the earth abundant hybrid glass composite, Young's modulus is enhanced by one to two orders of magnitude. This discovery, enabling reshaping control of plasmonic nanoparticles of multiple-length allows for continuous multi-level recording and reading with a capacity over 10 terabytes with no appreciable change of the baseline over 600 years, which opens new opportunities for long data memory that affects the past and future.

Coherent storage of temporally multimode light using a spin-wave atomic frequency comb memory

NASA Astrophysics Data System (ADS)

Gündoǧan, M.; Mazzera, M.; Ledingham, P. M.; Cristiani, M.; de Riedmatten, H.

2013-04-01

We report on the coherent and multi-temporal mode storage of light using the full atomic frequency comb memory scheme. The scheme involves the transfer of optical atomic excitations in Pr3+:Y2SiO5 to spin waves in hyperfine levels using strong single-frequency transfer pulses. Using this scheme, a total of five temporal modes are stored and recalled on-demand from the memory. The coherence of the storage and retrieval is characterized using a time-bin interference measurement resulting in visibilities higher than 80%, independent of the storage time. This coherent and multimode spin-wave memory is promising as a quantum memory for light.

Practicing What Is Preached: Self-Reflections on Memory in a Memory Course

ERIC Educational Resources Information Center

Conrad, Nicole J.

2013-01-01

To apply several principles of memory covered in a first-year university memory course, I developed a series of one-page self-reflection papers on memory that require students to engage with the material in a meaningful way. These short papers cover topics related to memory, and the assignment itself applies these same principles, reinforcing…

Bistable Microvalve For Use With Microcatheter System

DOEpatents

Seward, Kirk Patrick

2003-12-16

A bistable microvalve of shape memory material is operatively connected to a microcatheter. The bistable microvalve includes a tip that can be closed off until it is in the desired position. Once it is in position it can be opened and closed. The system uses heat and pressure to open and close the microvalve. The shape memory material will change stiffness and shape when heated above a transition temperature. The shape memory material is adapted to move from a first shape to a second shape, either open or closed, where it can perform a desired function.

Bistable microvalve and microcatheter system

DOEpatents

Seward, Kirk Patrick

2003-05-20

A bistable microvalve of shape memory material is operatively connected to a microcatheter. The bistable microvalve includes a tip that can be closed off until it is in the desired position. Once it is in position it can opened and closed. The system uses heat and pressure to open and close the microvalve. The shape memory material will change stiffness and shape when heated above a transition temperature. The shape memory material is adapted to move from a first shape to a second shape, either open or closed, where it can perform a desired function.

Vibration damping and heat transfer using material phase changes

NASA Technical Reports Server (NTRS)

Kloucek, Petr (Inventor); Reynolds, Daniel R. (Inventor)

2009-01-01

A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

Vibration damping and heat transfer using material phase changes

DOEpatents

Kloucek, Petr [Houston, TX; Reynolds, Daniel R [Oakland, CA

2009-03-24

A method and apparatus wherein phase changes in a material can dampen vibrational energy, dampen noise and facilitate heat transfer. One embodiment includes a method for damping vibrational energy in a body. The method comprises attaching a material to the body, wherein the material comprises a substrate, a shape memory alloy layer, and a plurality of temperature change elements. The method further comprises sensing vibrations in the body. In addition, the method comprises indicating to at least a portion of the temperature change elements to provide a temperature change in the shape memory alloy layer, wherein the temperature change is sufficient to provide a phase change in at least a portion of the shape memory alloy layer, and further wherein the phase change consumes a sufficient amount of kinetic energy to dampen at least a portion of the vibrational energy in the body. In other embodiments, the shape memory alloy layer is a thin film. Additional embodiments include a sensor connected to the material.

Working memory and the design of health materials: a cognitive factors perspective.

PubMed

Wilson, Elizabeth A H; Wolf, Michael S

2009-03-01

Working memory and other supportive cognitive processes involved in learning are reviewed in the context of developing patient education materials. We specifically focus on the impact of certain design factors such as text format and syntax, the inclusion of images, and the choice of modality on individuals' ability to understand and remember health information. A selective review of relevant cognitive and learning theories is discussed with regard to their potential impact on the optimal design of health materials. Working memory is measured as an individual's capacity to hold and manipulate information in active consciousness. It is limited by necessity, and well-designed health materials can effectively minimize extraneous cognitive demands placed on individuals, making working memory resources more available to better process content-related information. Further research is needed to evaluate specific design principles and identify ideal uses of print versus video-based forms of communication for conveying information. The process of developing health materials should account for the cognitive demands that extrinsic factors such as modality place on patients.